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Sample records for al2o3 thin films

  1. Atomically Thin Al2O3 Films for Tunnel Junctions

    Science.gov (United States)

    Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

    2017-06-01

    Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

  2. Antimicrobial effect of Al2O3, Ag and Al2O3/Ag thin films on Escherichia coli and Pseudomonas putida

    International Nuclear Information System (INIS)

    Angelov, O; Stoyanova, D; Ivanova, I; Todorova, S

    2016-01-01

    The influence of Al 2 O 3 , Ag and Al 2 O 3 /Ag thin films on bacterial growth of Gramnegative bacteria Pseudomonas putida and Escherichia coli is studied. The nanostructured thin films are deposited on glass substrates without intentional heating through r.f. magnetron sputtering in Ar atmosphere of Al 2 O 3 and Ag targets or through sequential sputtering of Al 2 O 3 and Ag targets, respectively. The individual Ag thin films (thickness 8 nm) have a weak bacteriostatic effect on Escherichia coli expressed as an extended adaptive phase of the bacteria up to 5 hours from the beginning of the experiment, but the final effect is only 10 times lower bacterial density than in the control. The individual Al 2 O 3 film (20 nm) has no antibacterial effect against two strains E. coli - industrial and pathogenic. The Al 2 O 3 /Ag bilayer films (Al 2 O 3 20 nm/Ag 8 nm) have strong bactericidal effect on Pseudomonas putida and demonstrate an effective time of disinfection for 2 hours. The individual films Al2O3 and Ag have not pronounced antibacterial effect on Pseudomonas putida . A synergistic effect of Al2O3/Ag bilayer films in formation of oxidative species on the surface in contact with the bacterial suspension could be a reason for their antimicrobial effect on E. coli and P. putida . (paper)

  3. Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

    International Nuclear Information System (INIS)

    Prasanna, S.; Mohan Rao, G.; Jayakumar, S.; Kannan, M.D.; Ganesan, V.

    2012-01-01

    Alumina (Al 2 O 3 ) thin films were sputter deposited over well-cleaned glass and Si substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 °C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al 2 O 3 -Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: ► Al 2 O 3 thin films were deposited by DC reactive magnetron sputtering. ► The films were found to be amorphous up to annealing temperature of 550 C. ► An increase in rms roughness of the films was observed with annealing. ► Al-Al 2 O 3 -Al thin film capacitors were fabricated and dielectric constant was 7.5. ► The activation energy decreased with increase in frequency.

  4. Surface study and thickness control of thin Al2O3 film on Cu-9%Al(111) single crystal

    International Nuclear Information System (INIS)

    Yamauchi, Yasuhiro; Yoshitake, Michiko; Song Weijie

    2004-01-01

    We were successful in growing a uniform flat Al 2 O 3 film on the Cu-9%Al(111) surface using the improved cleaning process, low ion energy and short time sputtering. The growth of ultra-thin film of Al 2 O 3 on Cu-9%Al was investigated using Auger electron spectroscopy (AES) and a scanning electron microscope (SEM). The Al 2 O 3 film whose maximum thickness was about 4.0 nm grew uniformly on the Cu-9%Al surface. The Al and O KLL Auger peaks of Al 2 O 3 film shifted toward low kinetic energy, and the shifts were related to Schottky barrier formation and band bending at the Al 2 O 3 /Cu-9%Al interface. The thickness of Al 2 O 3 film on the Cu-9%Al surface was controlled by the oxygen exposure

  5. Pulsed Laser deposition of Al2O3 thin film on silicon

    International Nuclear Information System (INIS)

    Lamagna, A.; Duhalde, S.; Correra, L.; Nicoletti, S.

    1998-01-01

    Al 2 O 3 thin films were fabricated by pulsed laser deposition (PLD) on Si 3 N 4 /Si, to improve the thermal and electrical isolation of gas sensing devices. The microstructure of the films is analysed as a function of the deposition conditions (laser fluence, oxygen pressure, target-substrate distance and substrate temperature). X-ray analysis shows that only a sharp peak that coincides with the corundum (116) reflection can be observed in all the films. But, when they are annealed at temperatures above 1,200 degree centigrade, a change in the crystalline structure of some films occurs. The stoichiometry and morphology of the films with and without thermal treatment are compared using environmental scanning electron microscopy (SEM) and EDAX analysis. (Author) 14 refs

  6. Deposition of thin film of titanium on ceramic substrate using the discharge for hollow cathode for Al2O3/Al2O3 indirect brazing

    Directory of Open Access Journals (Sweden)

    Mary Roberta Meira Marinho

    2009-01-01

    Full Text Available Thin films of titanium were deposited onto Al2O3 substrate by hollow cathode discharge method for the formation of a ceramic-ceramic joint using indirect brazing method. An advantage of using this technique is that a relatively small amount of titanium is required for the metallization of the ceramic surface when compared with other conventional methods. Rapidly solidified brazing filler of Cu49Ag45Ce6 in the form of ribbons was used. The thickness of deposited titanium layer and the brazing temperature/time were varied. The quality of the brazed joint was evaluated through the three point bending flexural tests. The brazed joints presented high flexural resistance values up to 176 MPa showing the efficiency of the technique.

  7. Electron trapping in neutron-irradiated very thin films of Al2O3

    International Nuclear Information System (INIS)

    Srivastava, P.C.; Bardhan, A.R.

    1979-01-01

    Oxide layers of thicknesses less than 100 A have been prepared by thermal-oxidation of a base metal electrode film of aluminium. These films were then neutron-irradiated from a laboratory Ra-Be source to a fluence of approximately 10 11 neutrons cm -2 and the sandwich structure, Al-Al 2 O 3 -Au, was completed by depositing a thin metal film of gold over the irradiated oxide layer. D.C. steady and transient flow through the sandwich structures have been studied. Results obtained in the experiments with irradiated sandwiches have been compared with unirradiated ones to show that traps are introduced because of the damage caused by the incident neutrons. Transient voltage measurement across the junction gives a trap density of approximately 10 18 cm -3 . A capture cross-section of the order 10 -28 cm 2 is estimated for the traps. It is found that the (identified) traps are uniformly distributed within an energy of 0.099 eV below the conduction band edge of aluminium oxide. The physical nature of the traps is discussed by comparing the capture cross-sections of the physically known trapping centres. The possibility of vacancies or F-centres acting as traps (for the identified ones) has been suggested. (author)

  8. Production and study of mixed Al-Al2O3 thin films for passive electronic circuits

    International Nuclear Information System (INIS)

    Pruniaux, B.

    1966-09-01

    A new vacuum deposition process, named reactive evaporation, is used to realize passive thin film circuits. Using aluminium, oxidized at various steps in its vapor phase, we obtain: - Al-Al 2 O 3 cermet resistors (R □ = 10000 Ω □ , CTR 2 O 3 capacitors (C □ = 60000 pf/cm 2 , tg δ [fr

  9. Growth of C60 thin films on Al2O3/NiAl(100) at early stages

    Science.gov (United States)

    Hsu, S.-C.; Liao, C.-H.; Hung, T.-C.; Wu, Y.-C.; Lai, Y.-L.; Hsu, Y.-J.; Luo, M.-F.

    2018-03-01

    The growth of thin films of C60 on Al2O3/NiAl(100) at the earliest stage was studied with scanning tunneling microscopy and synchrotron-based photoelectron spectroscopy under ultrahigh-vacuum conditions. C60 molecules, deposited from the vapor onto an ordered thin film of Al2O3/NiAl(100) at 300 K, nucleated into nanoscale rectangular islands, with their longer sides parallel to direction either [010] or [001] of NiAl. The particular island shape resulted because C60 diffused rapidly, and adsorbed and nucleated preferentially on the protrusion stripes of the crystalline Al2O3 surface. The monolayer C60 film exhibited linear protrusions of height 1-3 Å, due to either the structure of the underlying Al2O3 or the lattice mismatch at the boundaries of the coalescing C60 islands; such protrusions governed also the growth of the second layer. The second layer of the C60 film grew only for a C60 coverage >0.60 ML, implying a layer-by-layer growth mode, and also ripened in rectangular shapes. The thin film of C60 was thermally stable up to 400 K; above 500 K, the C60 islands dissociated and most C60 desorbed.

  10. Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Seok Hwan Jeong

    2018-03-01

    Full Text Available It is becoming more important for electronic devices to operate stably and reproducibly under harsh environments, such as extremely low and/or high temperatures, for robust and practical applications. Here, we report on the effects of atomic-layer-deposited (ALD aluminum oxide (Al2O3 passivation on multilayer molybdenum disulfide (MoS2 thin-film transistors (TFTs and their temperature-dependent electrical properties, especially at a high temperature range from 293 K to 380 K. With the aid of ultraviolet-ozone treatment, an Al2O3 layer was uniformly applied to cover the entire surface of MoS2 TFTs. Our Al2O3-passivated MoS2 TFTs exhibited not only a dramatic reduction of hysteresis but also enhancement of current in output characteristics. In addition, we investigated the temperature-dependent behaviors of the TFT performance, including intrinsic carrier mobility based on the Y-function method.

  11. Electrical characterization of γ-Al2O3 thin film parallel plate capacitive sensor for trace moisture detection

    Science.gov (United States)

    Kumar, Lokesh; Kumar, Shailesh; Khan, S. A.; Islam, Tariqul

    2012-10-01

    A moisture sensor was fabricated based on porous thin film of γ-Al2O3 formed between the parallel gold electrodes. The sensor works on capacitive technique. The sensing film was fabricated by dipcoating of aluminium hydroxide sol solution obtained from the sol-gel method. The porous structure of the film of γ-Al2O3 phase was obtained by sintering the film at 450 °C for 1 h. The electrical parameters of the sensor have been determined by Agilent 4294A impedance analyzer. The sensor so obtained is found to be sensitive in moisture range 100-600 ppmV. The response time of the sensor in ppmV range moisture is very low ~ 24 s and recovery time is ~ 37 s.

  12. Strain Distribution of Au and Ag Nanoparticles Embedded in Al2O3 Thin Film

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    Honghua Huang

    2014-01-01

    Full Text Available Au and Ag nanoparticles embedded in amorphous Al2O3 matrix are fabricated by the pulsed laser deposition (PLD method and rapid thermal annealing (RTA technique, which are confirmed by the experimental high-resolution transmission electron microscope (HRTEM results, respectively. The strain distribution of Au and Ag nanoparticles embedded in the Al2O3 matrix is investigated by the finite-element (FE calculations. The simulation results clearly indicate that both the Au and Ag nanoparticles incur compressive strain by the Al2O3 matrix. However, the compressive strain existing on the Au nanoparticle is much weaker than that on the Ag nanoparticle. This phenomenon can be attributed to the reason that Young’s modulus of Au is larger than that of Ag. This different strain distribution of Au and Ag nanoparticles in the same host matrix may have a significant influence on the technological potential applications of the Au-Ag alloy nanoparticles.

  13. Laser damage properties of TiO2/Al2O3 thin films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Wei Yaowei; Liu Hao; Sheng Ouyang; Liu Zhichao; Chen Songlin; Yang Liming

    2011-01-01

    Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO 2 /Al 2 O 3 films at 110 deg. C and 280 deg. C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100 mm Φ samples, and the transmission is more than 99.8% at 1064 nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO 2 /Al 2 O 3 films, the LIDTs were 6.73±0.47 J/cm 2 and 6.5±0.46 J/cm 2 at 110 deg. C on fused silica and BK7 substrates, respectively. The LIDTs at 110 deg. C are notably better than 280 deg. C.

  14. Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

    Science.gov (United States)

    Ma, Pengfei; Du, Lulu; Wang, Yiming; Jiang, Ran; Xin, Qian; Li, Yuxiang; Song, Aimin

    2018-01-01

    An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism.

  15. Ultrahigh vacuum dc magnetron sputter-deposition of epitaxial Pd(111)/Al2O3(0001) thin films.

    Science.gov (United States)

    Aleman, Angel; Li, Chao; Zaid, Hicham; Kindlund, Hanna; Fankhauser, Joshua; Prikhodko, Sergey V; Goorsky, Mark S; Kodambaka, Suneel

    2018-05-01

    Pd(111) thin films, ∼245 nm thick, are deposited on Al 2 O 3 (0001) substrates at ≈0.5 T m , where T m is the Pd melting point, by ultrahigh vacuum dc magnetron sputtering of Pd target in pure Ar discharges. Auger electron spectra and low-energy electron diffraction patterns acquired in situ from the as-deposited samples reveal that the surfaces are compositionally pure 111-oriented Pd. Double-axis x-ray diffraction (XRD) ω-2θ scans show only the set of Pd 111 peaks from the film. In triple-axis high-resolution XRD, the full width at half maximum intensity Γ ω of the Pd 111 ω-rocking curve is 630 arc sec. XRD 111 pole figure obtained from the sample revealed six peaks 60°-apart at a tilt angles corresponding to Pd 111 reflections. XRD ϕ scans show six 60°-rotated 111 peaks of Pd at the same ϕ angles for 11[Formula: see text]3 of Al 2 O 3 based on which the epitaxial crystallographic relationships between the film and the substrate are determined as [Formula: see text]ǁ[Formula: see text] with two in-plane orientations of [Formula: see text]ǁ[Formula: see text] and [Formula: see text]ǁ[Formula: see text]. Using triple axis symmetric and asymmetric reciprocal space maps, interplanar spacings of out-of-plane (111) and in-plane (11[Formula: see text]) are found to be 0.2242 ± 0.0003 and 0.1591 ± 0.0003 nm, respectively. These values are 0.18% lower than 0.2246 nm for (111) and the same, within the measurement uncertainties, as 0.1588 nm for (11[Formula: see text]) calculated from the bulk Pd lattice parameter, suggesting a small out-of-plane compressive strain and an in-plane tensile strain related to the thermal strain upon cooling the sample from the deposition temperature to room temperature. High-resolution cross-sectional transmission electron microscopy coupled with energy dispersive x-ray spectra obtained from the Pd(111)/Al 2 O 3 (0001) samples indicate that the Pd-Al 2 O 3 interfaces are essentially atomically abrupt and

  16. Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

    Science.gov (United States)

    Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

    2017-12-01

    In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

  17. Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition

    International Nuclear Information System (INIS)

    Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K.; Lee, W. J.; Shin, B. C.; Cho, C. R.

    2014-01-01

    Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al 2 O 3 dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al 2 O 3 and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al 2 O 3 gate dielectric exhibits a very low leakage current density of 1.3 x 10 -8 A/cm 2 at 5 V and a high capacitance density of 60.9 nF/cm 2 . The IGZO TFT with a structure of Ni/IGZO/Al 2 O 3 /Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm 2 V -1 s -1 , an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10 7 .

  18. Suppressing the Photocatalytic Activity of TiO2 Nanoparticles by Extremely Thin Al2O3 Films Grown by Gas-Phase Deposition at Ambient Conditions

    Directory of Open Access Journals (Sweden)

    Jing Guo

    2018-01-01

    Full Text Available This work investigated the suppression of photocatalytic activity of titanium dioxide (TiO2 pigment powders by extremely thin aluminum oxide (Al2O3 films deposited via an atomic-layer-deposition-type process using trimethylaluminum (TMA and H2O as precursors. The deposition was performed on multiple grams of TiO2 powder at room temperature and atmospheric pressure in a fluidized bed reactor, resulting in the growth of uniform and conformal Al2O3 films with thickness control at sub-nanometer level. The as-deposited Al2O3 films exhibited excellent photocatalytic suppression ability. Accordingly, an Al2O3 layer with a thickness of 1 nm could efficiently suppress the photocatalytic activities of rutile, anatase, and P25 TiO2 nanoparticles without affecting their bulk optical properties. In addition, the influence of high-temperature annealing on the properties of the Al2O3 layers was investigated, revealing the possibility of achieving porous Al2O3 layers. Our approach demonstrated a fast, efficient, and simple route to coating Al2O3 films on TiO2 pigment powders at the multigram scale, and showed great potential for large-scale production development.

  19. TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing

    Science.gov (United States)

    Kato, Kimihiko; Matsui, Hiroaki; Tabata, Hitoshi; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Control of fabrication processes for a gate stack structure with a ZnO thin channel layer and an Al2O3 gate insulator has been examined for enhancing the performance of a top-gate ZnO thin film transistor (TFT). The Al2O3/ZnO interface and the ZnO layer are defective just after the Al2O3 layer formation by atomic layer deposition. Post treatments such as plasma oxidation, annealing after the Al2O3 deposition, and gate metal formation (PMA) are promising to improve the interfacial and channel layer qualities drastically. Post-plasma oxidation effectively reduces the interfacial defect density and eliminates Fermi level pinning at the Al2O3/ZnO interface, which is essential for improving the cut-off of the drain current of TFTs. A thermal effect of post-Al2O3 deposition annealing at 350 °C can improve the crystalline quality of the ZnO layer, enhancing the mobility. On the other hand, impacts of post-Al2O3 deposition annealing and PMA need to be optimized because the annealing can also accompany the increase in the shallow-level defect density and the resulting electron concentration, in addition to the reduction in the deep-level defect density. The development of the interfacial control technique has realized the excellent TFT performance with a large ON/OFF ratio, steep subthreshold characteristics, and high field-effect mobility.

  20. Behaviour of Parallel Coupled Microstrip Band Pass Filter and Simple Microstripline due to Thin-Film Al2O3 Overlay

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    S. B. Rane

    1996-01-01

    Full Text Available The X-band behaviour of a seven-section parallel-coupled microstrip band pass filter and microstripline due to thin-film Al2O3 overlay of different thickness is reported in this paper. This Al2O3 film can give a homogeneous overlay structure. There is a substantial increase in the bandwidth due to the overlay, the pass band extending towards higher frequency side. In most of the cases, an increase in the pass band transmittance of a microstripline also increases due to a thin-film Al2O3 overlay, especially for frequencies less than 9.0 GHz. At higher frequencies, random variations are observed. It is felt that thin-film overlays can be used to modify the microstripline circuit properties, thereby avoiding costly and time consuming elaborate design procedures.

  1. Tunable optical properties of plasmonic Au/Al2O3 nanocomposite thin films analyzed by spectroscopic ellipsometry accounting surface characteristics.

    Science.gov (United States)

    Jaiswal, Jyoti; Mourya, Satyendra; Malik, Gaurav; Chandra, Ramesh

    2018-05-01

    In the present work, we have fabricated plasmonic gold/alumina nanocomposite (Au/Al 2 O 3 NC) thin films on a glass substrate at room temperature by RF magnetron co-sputtering. The influence of the film thickness (∼10-40  nm) on the optical and other physical properties of the samples was investigated and correlated with the structural and compositional properties. The X-ray diffractometer measurement revealed the formation of Au nanoparticles with average crystallite size (5-9.2 nm) embedded in an amorphous Al 2 O 3 matrix. The energy-dispersive X ray and X-ray photoelectron spectroscopy results confirmed the formation of Au/Al 2 O 3 NC quantitatively and qualitatively and it was observed that atomic% of Au increased by increasing thickness. The optical constants of the plasmonic Au/Al 2 O 3 NC thin films were examined by variable angle spectroscopic ellipsometry in the wide spectral range of 246-1688 nm, accounting the surface characteristics in the optical stack model, and the obtained results are expected to be unique. Additionally, a thickness-dependent blueshift (631-590 nm) of surface plasmon resonance peak was observed in the absorption spectra. These findings of the plasmonic Au/Al 2 O 3 NC films may allow the design and fabrication of small, compact, and efficient devices for optoelectronic and photonic applications.

  2. The structural studies of aluminosilicate gels and thin films synthesized by the sol-gel method using different Al2O3 and SiO2 precursors

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    Adamczyk Anna

    2015-12-01

    Full Text Available Aluminosilicate materials were obtained by sol-gel method, using different Al2O3 and SiO2 precursors in order to prepare sols based on water and organic solvents. As SiO2 precursors, Aerosil 200TM and tetraethoxysilane TEOS: Si(OC2H54 were applied, while DisperalTM and aluminium secondary butoxide ATSB: Al(OC4H93 were used for Al2O3 ones. Bulk samples were obtained by heating gels at 500 °C, 850 °C and at 1150 °C in air, while thin films were synthesized on carbon, steel and alundum (representing porous ceramics substrates by the dip coating method. Thin films were annealed in air (steel and alundum and in argon (carbon at different temperatures, depending on the substrate type. The samples were synthesized as gels and coatings of the composition corresponding the that of 3Al2O3·2SiO2 mullite because of the specific valuable properties of this material. The structure of the annealed bulk samples and coatings was studied by FT-IR spectroscopy and XRD method (in standard and GID configurations. Additionally, the electron microscopy (SEM together with EDS microanalysis were applied to describe the morphology and the chemical composition of thin films. The analysis of FT-IR spectra and X-ray diffraction patterns of bulk samples revealed the presence of γ-Al2O3 and δ-Al2O3 phases, together with the small amount of SiO2 in the particulate samples. This observation was confirmed by the bands due to vibrations of Al–O bonds occurring in γ-Al2O3 and δ-Al2O3 structures, in the range of 400 to 900 cm−1. The same phases (γ-Al2O3 and δ-Al2O were observed in the deposited coatings, but the presence of particulate ones strongly depended on the type of Al2O3 and SiO2 precursor and on the heat treatment temperature. All thin films contained considerable amounts of amorphous phase.

  3. Photocatalytic activity of Al2O3-doped TiO2 thin films activated with visible light on the bacteria Escherichia coli

    International Nuclear Information System (INIS)

    Barajas-Ledesma, E.; Garcia-Benjume, M.L.; Espitia-Cabrera, I.; Bravo-Patino, A.; Espinoza-Beltran, F.J.; Mostaghimi, J.; Contreras-Garcia, M.E.

    2010-01-01

    Al 2 O 3 -doped TiO 2 thin films were prepared by combining electrophoretic deposition (EPD) with sputtering. A Corning* glass was used as a substrate, in which a titanium film was deposited by sputtering. Then, a precursor sol was prepared with Ti(n-OBu) 4 and Al(s-OBu) 3 and used as the medium for EPD. Next, the thin films were sintered and, finally, characterised by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Several cultures of Escherichia coli, strain XL1-Blue, were prepared. Nine experiments were carried out. In three of them, an inoculum (a low amount of a product that contains bacteria) was prepared without a film; in the other six Al 2 O 3 -doped TiO 2 film-coated glass substrates were irradiated with visible light before they were introduced in the inoculum. The SEM and EDS results showed that TiO 2 -Al 2 O 3 films were obtained, covering all the glass substrate and with uniform size of particles forming them, and that the aluminium was distributed uniformly on the film. XRD results showed that rutile phase was obtained. By TEM, the structure of TiO 2 was demonstrated. Al 2 O 3 -doped TiO 2 thin films were successful at eliminating E. coli.

  4. Suppressing the Photocatalytic Activity of TiO2 Nanoparticles by Extremely Thin Al2O3 Films Grown by Gas-Phase Deposition at Ambient Conditions

    NARCIS (Netherlands)

    Guo, J.; Bui, H.V.; Valdesueiro Gonzalez, D.; Yuan, Shaojun; Liang, Bin; van Ommen, J.R.

    2018-01-01

    This work investigated the suppression of photocatalytic activity of titanium dioxide (TiO2) pigment powders by extremely thin aluminum oxide (Al2O3) films deposited via an atomic-layer-deposition-type process using trimethylaluminum (TMA) and H2O as precursors. The deposition was performed on

  5. Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Koo, Jae Bon; Lim, Jung Wook; Kim, Seong Hyun; Yun, Sun Jin; Ku, Chan Hoe; Lim, Sang Chul; Lee, Jung Hun

    2007-01-01

    The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al 2 O 3 dielectric are reported. Saturation mobility of 0.38 cm 2 /V s, threshold voltage of 1 V, subthreshold swing of 0.6 V/decade, and on/off current ratio of about 10 8 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al 2 O 3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5 V to - 5 V at supply voltage of - 5 V

  6. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    Directory of Open Access Journals (Sweden)

    Shi-Bing Qian

    2015-12-01

    Full Text Available Amorphous indium-gallium-zinc oxide (a-IGZO thin-film transistor (TFT memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  7. A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnO_x–Al_2O_3 thin film structure

    International Nuclear Information System (INIS)

    Li, H. K.; Chen, T. P.; Liu, P.; Zhang, Q.; Hu, S. G.; Liu, Y.; Lee, P. S.

    2016-01-01

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al_2O_3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al_2O_3 interface and/or in the Al_2O_3 layer.

  8. Nanostructural origin of semiconductivity and large magnetoresistance in epitaxial NiCo2O4/Al2O3 thin films

    Science.gov (United States)

    Zhen, Congmian; Zhang, XiaoZhe; Wei, Wengang; Guo, Wenzhe; Pant, Ankit; Xu, Xiaoshan; Shen, Jian; Ma, Li; Hou, Denglu

    2018-04-01

    Despite low resistivity (~1 mΩ cm), metallic electrical transport has not been commonly observed in inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and the degree of spinel inversion on the electrical conduction of NiCo2O4 films. In this work, we studied the effect of nanostructural disorder by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (1 1 1) and on Al2O3 (0 0 1) substrates. Although the optimal growth conditions are similar for the NiCo2O4 (1 1 1)/MgAl2O4 (1 1 1) and the NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, they show metallic and semiconducting electrical transport, respectively. Post-growth annealing decreases the resistivity of NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, but the annealed films are still semiconducting. While the semiconductivity and the large magnetoresistance in NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films cannot be accounted for in terms of non-optimal valence mixing and spinel inversion, the presence of anti-phase boundaries between nano-sized crystallites, generated by the structural mismatch between NiCo2O4 and Al2O3, may explain all the experimental observations in this work. These results reveal nanostructural disorder as being another key factor for controlling the electrical transport of NiCo2O4, with potentially large magnetoresistance for spintronics applications.

  9. Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    Directory of Open Access Journals (Sweden)

    Ruiying Zhang

    2015-12-01

    Full Text Available We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10−9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.

  10. Measurement of Young’s modulus and residual stress of atomic layer deposited Al2O3 and Pt thin films

    Science.gov (United States)

    Purkl, Fabian; Daus, Alwin; English, Timothy S.; Provine, J.; Feyh, Ando; Urban, Gerald; Kenny, Thomas W.

    2017-08-01

    The accurate measurement of mechanical properties of thin films is required for the design of reliable nano/micro-electromechanical devices but is increasingly challenging for thicknesses approaching a few nanometers. We apply a combination of resonant and static mechanical test structures to measure elastic constants and residual stresses of 8-27 nm thick Al2O3 and Pt layers which have been fabricated through atomic layer deposition. Young’s modulus of poly-crystalline Pt films was found to be reduced by less than 15% compared to the bulk value, whereas for amorphous Al2O3 it was reduced to about half of its bulk value. We observed no discernible dependence of the elastic constant on thickness or deposition method for Pt, but the use of plasma-enhanced atomic layer deposition was found to increase Young’s modulus of Al2O3 by 10% compared to a thermal atomic layer deposition. As deposited, the Al2O3 layers had an average tensile residual stress of 131 MPa. The stress was found to be higher for thinner layers and layers deposited without the help of a remote plasma. No residual stress values could be extracted for Pt due to insufficient adhesion of the film without an underlying layer to promote nucleation.

  11. Suppression of oxygen diffusion by thin Al2O3 films grown on SrTiO3 studied using a monoenergetic positron beam

    International Nuclear Information System (INIS)

    Uedono, A.; Kiyohara, M.; Yasui, N.; Yamabe, K.

    2005-01-01

    The annealing behaviors of oxygen vacancies introduced by the epitaxial growth of thin SrTiO 3 and Al 2 O 3 films on SrTiO 3 substrates were studied by using a monoenergetic positron beam. The films were grown by molecular-beam epitaxy without using an oxidant. The Doppler broadening spectra of the annihilation radiation were measured as a function of the incident positron energy for samples fabricated under various growth conditions. The line-shape parameter S, corresponding to the annihilation of positrons in the substrate, was increased by the film growth, suggesting diffusion of oxygen from the substrate into the film and a resultant introduction of vacancies (mainly oxygen vacancies). A clear correlation between the value of S and the substrate conductivity was obtained. From isochronal annealing experiments, the Al 2 O 3 thin film was found to suppress the penetration of oxygen from the atmosphere for annealing temperatures below 600 deg. C. Degradation of the film's oxygen blocking property occurred due to the annealing at 700 deg. C, and this was attributed to the oxidation of the Al 2 O 3 by the atmosphere and the resultant introduction of vacancy-type defects

  12. Control of phonon transport by the formation of the Al2O3 interlayer in Al2O3-ZnO superlattice thin films and their in-plane thermoelectric energy generator performance.

    Science.gov (United States)

    Park, No-Won; Ahn, Jay-Young; Park, Tae-Hyun; Lee, Jung-Hun; Lee, Won-Yong; Cho, Kwanghee; Yoon, Young-Gui; Choi, Chel-Jong; Park, Jin-Seong; Lee, Sang-Kwon

    2017-06-01

    Recently, significant progress has been made in increasing the figure-of-merit (ZT) of various nanostructured materials, including thin-film and quantum dot superlattice structures. Studies have focused on the size reduction and control of the surface or interface of nanostructured materials since these approaches enhance the thermopower and phonon scattering in quantum and superlattice structures. Currently, bismuth-tellurium-based semiconductor materials are widely employed for thermoelectric (TE) devices such as TE energy generators and coolers, in addition to other sensors, for use at temperatures under 400 K. However, new and promising TE materials with enhanced TE performance, including doped zinc oxide (ZnO) multilayer or superlattice thin films, are also required for designing solid-state TE power generating devices with the maximum output power density and for investigating the physics of in-plane TE generators. Herein, we report the growth of Al 2 O 3 /ZnO (AO/ZnO) superlattice thin films, which were prepared by atomic layer deposition (ALD), and the evaluation of their electrical and TE properties. All the in-plane TE properties, including the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ), of the AO/ZnO superlattice (with a 0.82 nm-thick AO layer) and AO/ZnO films (with a 0.13 nm-thick AO layer) were evaluated in the temperature range 40-300 K, and the measured S, σ, and κ were -62.4 and -17.5 μV K -1 , 113 and 847 (Ω cm) -1 , and 0.96 and 1.04 W m -1 K -1 , respectively, at 300 K. Consequently, the in-plane TE ZT factor of AO/ZnO superlattice films was found to be ∼0.014, which is approximately two times more than that of AO/ZnO films (ZT of ∼0.007) at 300 K. Furthermore, the electrical power generation efficiency of the TE energy generator consisting of four couples of n-AO/ZnO superlattice films and p-Bi 0.5 Sb 1.5 Te 3 (p-BST) thin-film legs on the substrate was demonstrated. Surprisingly, the output

  13. In-situ hybrid study of thermal behaviour of Znsbnd Ni and Znsbnd Nisbnd Al2O3 nanocrystallite thin films induced TEA/MEA by electrocodeposition

    Science.gov (United States)

    Abdulwahab, M.; Fayomi, O. S. I.; Popoola, A. P. I.; Dodo, M. R.

    Our present investigation focuses on the thermal stability of already developed electroforms of Znsbnd Ni and Znsbnd Nisbnd Al2O3 thin films induced with triethylamine (TEA) and monoethylamine (MEA) as surfactant by electrocodeposition on mild steel substrate with the aim to re-examine its micro-hardness and degradation behaviour in static sodium chloride solution. In the event, the samples were thermally treated at 200 °C and air cooled. The results obtained showed that the developed composites are thermally stable with hardness value of the Znsbnd Nisbnd Al2O3 coated; 185 Hv increased to 190.5 Hv indicating a 2.89% improvement. Noticeably, in the Znsbnd Ni coatings, a decrease in the hardness with 26.67% was observed. The oxidation resistance was however favored for both composites.

  14. Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors

    Science.gov (United States)

    Corsino, Dianne C.; Bermundo, Juan Paolo S.; Fujii, Mami N.; Takahashi, Kiyoshi; Ishikawa, Yasuaki; Uraoka, Yukiharu

    2018-06-01

    Atomic layer deposition (ALD) of Al2O3 using dimethylaluminum hydride (DMAH) was demonstrated as an effective passivation for amorphous InGaZnO thin-film transistors (TFTs). Compared with the most commonly used precursor, trimethylaluminum, TFTs fabricated with DMAH showed improved stability, resulting from the lower amount of oxygen vacancies, and hence fewer trap sites, as shown by X-ray photoelectron spectroscopy (XPS) depth profiling analysis. We found that prolonged plasma exposure during ALD can eliminate the hump phenomenon, which is only present for DMAH. The higher Al2O3 deposition rate when using DMAH is in line with the requirements of emerging techniques, such as spatial ALD, for improving fabrication throughput.

  15. Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

    Science.gov (United States)

    Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

    2018-02-01

    To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

  16. Surface characterization of poly(methylmethacrylate) based nanocomposite thin films containing Al2O3 and TiO2 nanoparticles

    International Nuclear Information System (INIS)

    Lewis, S.; Haynes, V.; Wheeler-Jones, R.; Sly, J.; Perks, R.M.; Piccirillo, L.

    2010-01-01

    Poly(methylmethacrylate) (PMMA) based nanocomposite electron beam resists have been demonstrated by spin coating techniques. When TiO 2 and Al 2 O 3 nanoparticles were directly dispersed into the PMMA polymer matrix, the resulting nanocomposites produced poor quality films with surface roughnesses of 322 and 402 nm respectively. To improve the surface of the resists, the oxide nanoparticles were encapsulated in toluene and methanol. Using the zeta potential parameter, it was found that the stabilities of the toluene/oxide nanoparticle suspensions were 7.7 mV and 19.4 mV respectively, meaning that the suspension was not stable. However, when the TiO 2 and Al 2 O 3 nanoparticles were encapsulated in methanol the zeta potential parameter was 31.9 mV and 39.2 mV respectively. Therefore, the nanoparticle suspension was stable. This method improved the surface roughness of PMMA based nanocomposite thin films by a factor of 6.6 and 6.4, when TiO 2 and Al 2 O 3 were suspended in methanol before being dispersed into the PMMA polymer.

  17. Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures

    International Nuclear Information System (INIS)

    Guillén-Cervantes, A.; Rivera-Álvarez, Z.; López-López, M.; Ponce-Pedraza, A.; Guarneros, C.; Sánchez-Reséndiz, V.M.

    2011-01-01

    GaN thin films grown by MOCVD on (0 0 0 1) Al 2 O 3 substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was found that there is an optimum pressure of 76 Torr at which the structural and optical properties of the GaN samples are superior. On the other hand samples grown at higher pressure exhibited hexagonal surface pits and surface spirals. The results showed that the growth pressure strongly influences the morphology, and significantly affects the structural and optical properties of the GaN epilayers.

  18. Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al2O3(0001) substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

    2007-01-01

    Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al 2 O 3 (0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively

  19. Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper.

    Science.gov (United States)

    Ning, Honglong; Zeng, Yong; Kuang, Yudi; Zheng, Zeke; Zhou, Panpan; Yao, Rihui; Zhang, Hongke; Bao, Wenzhong; Chen, Gang; Fang, Zhiqiang; Peng, Junbiao

    2017-08-23

    Integrating biodegradable cellulose nanopaper into oxide thin-film transistors (TFTs) for next generation flexible and green flat panel displays has attracted great interest because it offers a viable solution to address the rapid increase of electronic waste that poses a growing ecological problem. However, a compromise between device performance and thermal annealing remains an obstacle for achieving high-performance nanopaper TFTs. In this study, a high-performance bottom-gate IGZO/Al 2 O 3 TFT with a dual-layer channel structure was initially fabricated on a highly transparent, clear, and ultrasmooth nanopaper substrate via conventional physical vapor deposition approaches, without further thermal annealing processing. Purified nanofibrillated cellulose with a width of approximately 3.7 nm was used to prepare nanopaper with excellent optical properties (92% transparency, 0.85% transmission haze) and superior surface roughness (Rq is 1.8 nm over a 5 × 5 μm 2 scanning area). More significantly, a bilayer channel structure (IGZO/Al 2 O 3 ) was adopted to fabricate high performance TFT on this nanopaper substrate without thermal annealing and the device exhibits a saturation mobility of 15.8 cm 2 /(Vs), an I on /I off ratio of 4.4 × 10 5 , a threshold voltage (V th ) of -0.42 V, and a subthreshold swing (SS) of 0.66 V/dec. The room-temperature fabrication of high-performance IGZO/Al 2 O 3 TFTs on such nanopaper substrate without thermal annealing treatment brings industry a step closer to realizing inexpensive, flexible, lightweight, and green paper displays.

  20. Enhanced photoelectrocatalytic performance of α-Fe2O3 thin films by surface plasmon resonance of Au nanoparticles coupled with surface passivation by atom layer deposition of Al2O3.

    Science.gov (United States)

    Liu, Yuting; Xu, Zhen; Yin, Min; Fan, Haowen; Cheng, Weijie; Lu, Linfeng; Song, Ye; Ma, Jing; Zhu, Xufei

    2015-12-01

    The short lifetime of photogenerated charge carriers of hematite (α-Fe2O3) thin films strongly hindered the PEC performances. Herein, α-Fe2O3 thin films with surface nanowire were synthesized by electrodeposition and post annealing method for photoelectrocatalytic (PEC) water splitting. The thickness of the α-Fe2O3 films can be precisely controlled by adjusting the duration of the electrodeposition. The Au nanoparticles (NPs) and Al2O3 shell by atom layer deposition were further introduced to modify the photoelectrodes. Different constructions were made with different deposition orders of Au and Al2O3 on Fe2O3 films. The Fe2O3-Au-Al2O3 construction shows the best PEC performance with 1.78 times enhancement by localized surface plasmon resonance (LSPR) of NPs in conjunction with surface passivation of Al2O3 shells. Numerical simulation was carried out to investigate the promotion mechanisms. The high PEC performance for Fe2O3-Au-Al2O3 construction electrode could be attributed to the Al2O3 intensified LSPR, effective surface passivation by Al2O3 coating, and the efficient charge transfer due to the Fe2O3-Au Schottky junctions.

  1. RHEED and EELS study of Pd/Al bimetallic thin film growth on different α-Al 2O 3 substrates

    Science.gov (United States)

    Moroz, V.; Rajs, K.; Mašek, K.

    2002-06-01

    Pd/Al bimetallic thin films were grown by molecular beam epitaxy on single-crystalline α-Al 2O 3(0 0 0 1) and (1 1 2¯ 0) surfaces. Substrate and deposit crystallographic structures and evolution of deposit lattice parameter during the growth were studied by reflection high-energy electron diffraction. The electron energy loss spectroscopy was used as an auxiliary method for chemical analysis. The bimetallic films were prepared by successive deposition of both Pd and Al metals. The structure of Pd and Al deposits in early stages of the growth and its dependence on the preparation conditions were studied. Two phases of Pd clusters covered by Al overlayer have been found. The formation of Al overlayer strongly influenced the lattice parameter of Pd clusters.

  2. Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

    Science.gov (United States)

    Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

    2014-12-01

    The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions.

  3. Hydrogen–argon plasma pre-treatment for improving the anti-corrosion properties of thin Al2O3 films deposited using atomic layer deposition on steel

    International Nuclear Information System (INIS)

    Härkönen, Emma; Potts, Stephen E.; Kessels, Wilhelmus M.M.; Díaz, Belén; Seyeux, Antoine; Światowska, Jolanta; Maurice, Vincent; Marcus, Philippe; Radnóczi, György; Tóth, Lajos; Kariniemi, Maarit; Niinistö, Jaakko; Ritala, Mikko

    2013-01-01

    The effect of H 2 –Ar plasma pre-treatment prior to thermal atomic layer deposition (ALD) and plasma-enhanced atomic layer deposition (PEALD) of Al 2 O 3 films on steel for corrosion protection was investigated. Time-of-flight secondary ion mass spectrometry and transmission electron microscopy were used to observe the changes in the interface. The electrochemical properties of the samples were studied with polarization measurements, and the coating porosities were calculated from the polarization results for easier comparison of the coatings. Prior to thermal ALD the plasma pre-treatment was observed to reduce the amount of impurities at the interface and coating porosity by 1–3 orders of magnitude. The anti-corrosion properties of the PEALD coatings could also be improved by the pre-treatment. However, exposure of the pre-treatment plasma activated steel surface to oxygen plasma species in PEALD led to facile oxide layer formation in the interface. The oxide layer formed this way was thicker than the native oxide layer and appeared to be detrimental to the protective properties of the coating. The best performance for PEALD Al 2 O 3 coatings was achieved when, after the plasma pre-treatment, the surface was given time to regrow a thin protective interfacial oxide prior to exposure to the oxygen plasma. The different effects that thermal and plasma-enhanced ALD have on the substrate-coating interface were compared. The reactivity of the oxygen precursor was shown to have a significant influence on substrate surface in the early stages of film growth and thereafter also on the overall quality of the protective film. - Highlights: • Influence of H 2 –Ar plasma pre-treatment to ALD coatings on steel was studied. • The pre-treatment modified the coating–substrate interface composition and thickness. • The pre-treatment improved the barrier properties of the coatings

  4. Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Zhang, Wen-Peng; Chen, Sun; Qian, Shi-Bing; Ding, Shi-Jin

    2015-01-01

    We studied how the performance of In–Ga–Zn–O (IGZO) thin film transistors (TFTs) with Al 2 O 3 gate insulator was affected by post-fabrication annealing temperature and annealing time. At a fixed annealing time of 2 min, the IGZO TFT exhibited the best transfer and output characteristics in the case of 300 °C in N 2 atmosphere, which is attributed to the achievement of appropriate carrier concentration and Hall mobility in the IGZO film. Further, it was found that both of the carrier concentration and Hall mobility in the IGZO film increased with the increment of annealing temperature. For the annealing temperature of 300 °C, the performance of the IGZO TFT was further improved by extending annealing time to 5 min, i.e., the field effect mobility, sub-threshold swing and on/off current ratio were 11.6 cm 2 /(V · s), 0.42 V dec −1 and 10 6 , respectively. The underlying mechanism was discussed. (paper)

  5. Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer

    Directory of Open Access Journals (Sweden)

    Xingpeng Liu

    2017-12-01

    Full Text Available In order to develop film electrodes for the surface acoustic wave (SAW devices operating in harsh high-temperature environments, novel Al2O3/Pt/ZnO/Al2O3 multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE at 150 °C. The first Al2O3 layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La3Ga5SiO14 (LGS substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al2O3/Pt/ZnO/Al2O3 electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al2O3/Pt/ZnO/Al2O3 film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al2O3/Pt/ZnO/Al2O3 film electrode has great potential for application in high-temperature SAW devices.

  6. The investigation of ZnO:Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    Wang Guang-Hong; Zhao Lei; Yan Bao-Jun; Chen Jing-Wei; Wang Ge; Diao Hong-Wei; Wang Wen-Jing

    2013-01-01

    Different aluminum-doped ZnO (AZO)/metal composite thin films,including AZO/Ag/Al,AZO/Ag/nickelchromium alloy (NiCr),and AZO/Ag/NiCr/Al,are utilized as the back reflectors of p-i-n amorphous silicon germanium thin film solar cells.NiCr is used as diffusion barrier layer between Ag and Al to prevent mutual diffusion,which increases the short circuit current density of solar cell.NiCr and NiCr/Al layers are used as protective layers of Ag layer against oxidation and sulfurization,the higher efficiency of solar cell is achieved.The experimental results show that the performance of a-SiGe solar cell with AZO/Ag/NiCr/Al back reflector is best.The initial conversion efficiency is achieved to be 8.05%.

  7. Formation of epitaxial Al 2O 3/NiAl(1 1 0) films: aluminium deposition

    Science.gov (United States)

    Lykhach, Y.; Moroz, V.; Yoshitake, M.

    2005-02-01

    Structure of epitaxial Al 2O 3 layers formed on NiAl(1 1 0) substrates has been studied by means of reflection high-energy electron diffraction (RHEED). The elucidated structure was compared to the model suggested for 0.5 nm-thick Al 2O 3 layers [K. Müller, H. Lindner, D.M. Zehner, G. Ownby, Verh. Dtsch. Phys. Ges. 25 (1990) 1130; R.M. Jaeger, H. Kuhlenbeck, H.J. Freund, Surf. Sci. 259 (1991) 235]. The stepwise growth of Al 2O 3 film, involving deposition and subsequent oxidation of aluminium onto epitaxial 0.5 nm-thick Al 2O 3 layers, has been investigated. Aluminium was deposited at room temperature, whereas its oxidation took place during annealing at 1070 K. The Al 2O 3 thickness was monitored by means of Auger electron spectroscopy (AES). It was found that Al 2O 3 layer follows the structure of 0.5 nm thick Al 2O 3 film, although a tilting of Al 2O 3(1 1 1) surface plane with respect to NiAl(1 1 0) surface appeared after Al deposition.

  8. Mechanical properties of Al2O3-doped (2 wt.%) ZnO films

    International Nuclear Information System (INIS)

    Kuriki, Shina; Kawashima, Toshitaka

    2007-01-01

    We report a new method of evaluating the adhesion of Al 2 O 3 -doped (2 wt.%) ZnO (AZO) thin films. The AZO films were deposited by DC reactive magnetron sputtering on plastic film (PET: polyethyleneterephthalate) at various sputtering pressures, power, and reactive gas-flow ratios. The adhesion test of the films was carried out using the nanoindentation system. The fracture point as determined by the load-displacement curve occurred at the time of separation between the thin film and the substrate. The integration value of load and displacement to the fracture point is defined as the degree of adhesion (S W ). The AZO films showed that adhesion increase as sputtering power increases and sputtering pressure decreases

  9. Effects of the crystallographic orientation of the Al2O3 substrate on the structural and the optical properties of ZnO thin films

    International Nuclear Information System (INIS)

    Lee, Chongmu; Park, Yeonkyu; Kim, Kyungha

    2006-01-01

    The structure and the optical properties of ZnO thin films grown on (0002) C-plane, (1120) A-plane, and (1012) R-plane sapphire substrates by using atomic layer epitaxy (ALE) were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and photoluminescence analysis (PL) techniques. The ZnO film grown on the C-plane sapphire substrate has the smallest full width at half maximum (FWHM) values for both the X-ray (0002) diffraction peak and the photoluminescence peak for near-band-edge emission whereas that grown on the R-plane sapphire substrate has the largest FWHM values. On the other hand, the ZnO film grown on the C-plane sapphire substrate has the strong texture of the c-axis but the roughest surface while those grown on the R- and the C-plane sapphire substrates have smoother surfaces but do not have the texture of the c-axis.

  10. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

    Science.gov (United States)

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

  11. Crystalline and electronic structure of epitaxial γ-Al2O3 films

    International Nuclear Information System (INIS)

    Wu, Huiyan; Lu, Dawei; Zhu, Kerong; Xu, Guoyong; Wang, Hu

    2013-01-01

    Epitaxial γ-Al 2 O 3 films were fabricated on SrTiO 3 (1 0 0) substrates using pulsed laser deposition (PLD) technique. The high quality of epitaxial growth γ-Al 2 O 3 films was confirmed by X-ray diffraction (XRD). Atomic force microscopy (AFM) images indicated the smooth surfaces and the step-flow growth of the films. In order to illuminate the electronic properties and the local structure of the epitaxial γ-Al 2 O 3 , we experimentally measured the X-ray absorption near-edge structure (XANES) spectrum at the O K-edge and compared the spectrum with the theoretical simulations by using various structure models. Our results based on XANES spectrum analysis indicated that the structure of the epitaxial γ-Al 2 O 3 film was a defective spinel with Al vacancies, which prefer to be located at the octahedral sites

  12. Calculation of Al2O3 contents in Al2O3-PTFE composite thick films fabricated by using the aerosol deposition

    International Nuclear Information System (INIS)

    Kim, Hyung-Jun; Kim, Yoon-Hyun; Nam, Song-Min; Yoon, Young-Joon; Kim, Jong-Hee

    2010-01-01

    Low-temperature fabrication of Al 2 O 3 -PTFE (poly tetra fluoro ethylene) composite thick films for flexible integrated substrates was attempted by using the aerosol deposition method. For optimization of composite thick films, a novel calculation method for the ceramic contents in the composites was attempted. Generally, a thermogravimetry (TG) analysis is used to calculate the ceramic contents in the ceramic-polymer composites. However, the TG analysis requires a long measurement time in each analysis, so we studied a novel calculation method that used a simple dielectric measurement. We used Hashin-Shtrikman bounds to obtain numerical results for the relationship between the dielectric constant of the composites and the contents of Al 2 O 3 . A 3-D electrostatic simulation model similar to the deposited Al 2 O 3 -PTFE composite thick films was prepared, and the simulation result was around the lower bound of the Hashin-Shtrikman bounds. As a result, we could calculate the Al 2 O 3 contents in the composites with a low error of below 5 vol.% from convenient dielectric measurements, and the Al 2 O 3 contents ranged from 51 vol.% to 54 vol.%.

  13. Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

    International Nuclear Information System (INIS)

    Yoon, Sung-Min; Yang, Shin-Hyuk; Ko Park, Sang-Hee; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; Hwang, Chi-Sun; Yu, Byoung-Gon

    2009-01-01

    Poly(vinylidene fluoride trifluoroethylene) and ZnO were employed for nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. It was proposed that the thickness of the ZnO layer be carefully controlled for realizing the lower programming voltage, because the serially connected capacitor by the formation of a fully depleted ZnO channel had a critical effect on the off programming voltage. The fabricated memory transistor with Al/P(VDF-TrFE) (80 nm)/Al 2 O 3 (4 nm)/ZnO (5 nm) exhibits encouraging behaviour such as a memory window of 3.8 V at the gate voltage of -10 to 12 V, and 10 7 on/off ratio, and a gate leakage current of 10 -11 A.

  14. RBS characterization of Al2O3 films doped with Ce and Mn

    International Nuclear Information System (INIS)

    Martinez-Martinez, R.; Rickards, J.; Garcia-Hipolito, M.; Trejo-Luna, R.; Martinez-Sanchez, E.; Alvarez-Fregoso, O.; Ramos-Brito, F.; Falcony, C.

    2005-01-01

    Rutherford backscattering (RBS) with 4 He energies from 2 to 6 MeV has been used to study the properties of thin amorphous photoluminescent Al 2 O 3 :Ce,Mn films grown by spray pyrolysis on Corning 7059 glass substrates. The source solutions were AlCl 3 , CeCl 3 and MnCl 2 dissolved in deionized water. Different molar concentrations (Ce 10%; Mn 1%, 3%, 5%, 7% and 10%) were investigated under the same deposition conditions at a substrate temperature of 300 deg. C. The RBS spectra show a homogeneous depth profile of both Ce and Mn within the films, and the measured quantities are consistent with the original solution concentrations. An important amount of Cl, which plays a significant role in luminescent properties, was detected, in both the doped and undoped samples

  15. Surface Passivation Mechanism of Atomic Layer Deposited Al2O3 Films on c-Si Studied by Optical Second-Harmonic Generation

    NARCIS (Netherlands)

    Gielis, J.J.H.; Verlaan, V.; Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.; Terlinden, N.M.

    2009-01-01

    Recently, it was shown that Al2O3 thin films synthesized by (plasmaassisted) atomic layer deposition (ALD) provide excellent surface passivation of n, p and p+ type c-Si as highly relevant for c-Si photovoltaics. It was found that a large negative fixed charge density (up to 1013 cm-2) in the Al2O3

  16. Spatial structure of radio frequency ring-shaped magnetized discharge sputtering plasma using two facing ZnO/Al2O3 cylindrical targets for Al-doped ZnO thin film preparation

    Directory of Open Access Journals (Sweden)

    Takashi Sumiyama

    2017-05-01

    Full Text Available Spatial structure of high-density radio frequency ring-shaped magnetized discharge plasma sputtering with two facing ZnO/Al2O3 cylindrical targets mounted in ring-shaped hollow cathode has been measured and Al-doped ZnO (AZO thin film is deposited without substrate heating. The plasma density has a peak at ring-shaped hollow trench near the cathode. The radial profile becomes uniform with increasing the distance from the target cathode. A low ion current flowing to the substrate of 0.19 mA/cm2 is attained. Large area AZO films with a resistivity of 4.1 – 6.7×10-4 Ω cm can be prepared at a substrate room temperature. The transmittance is 84.5 % in a visible region. The surface roughnesses of AZO films are 0.86, 0.68, 0.64, 1.7 nm at radial positions of r = 0, 15, 30, 40 mm, respectively, while diffraction peak of AZO films is 34.26°. The grains exhibit a preferential orientation along (002 axis.

  17. Raman scattering and x-ray diffractometry studies of epitaxial TiO2 and VO2 thin films and multilayers on α-Al2O3(11 bar 20)

    International Nuclear Information System (INIS)

    Foster, C.M.; Chiarello, R.P.; Chang, H.L.M.; You, H.; Zhang, T.J.; Frase, H.; Parker, J.C.; Lam, D.J.

    1993-01-01

    Epitaxial thin films of TiO 2 and VO 2 single layers and TiO 2 /VO 2 multilayers were grown on (11 bar 20) sapphire (α-Al 2 O 3 ) substrates using the metalorganic chemical vapor deposition technique and were characterized using Raman scattering and four x-ray diffractometry. X-ray diffraction results indicate that the films are high quality single crystal material with well defined growth plane and small in-plane and out-of-plane mosaic. Single-layer films are shown to obey the Raman selection rules of TiO 2 and VO 2 single crystals. The close adherence to the Raman selection rules indicates the high degree of orientation of the films, both parallel and perpendicular to the growth plane. Selection rule spectra of two and three layer TiO 2 /VO 2 multilayers are dominated by the VO 2 layers with only minimal signature of the TiO 2 layers. Due to the low band gap of semiconducting vanadium dioxide, we attribute the strong signature of the VO 2 layers to resonant enhancement of the VO 2 Raman component accompanied with absorption of the both the incident and scattered laser light from the TiO 2 layers

  18. Thermal stability of atomic layer deposition Al2O3 film on HgCdTe

    Science.gov (United States)

    Zhang, P.; Sun, C. H.; Zhang, Y.; Chen, X.; He, K.; Chen, Y. Y.; Ye, Z. H.

    2015-06-01

    Thermal stability of Atomic Layer Deposition Al2O3 film on HgCdTe was investigated by Al2O3 film post-deposition annealing treatment and Metal-Insulator-Semiconductor device low-temperature baking treatment. The effectiveness of Al2O3 film was evaluated by measuring the minority carrier lifetime and capacitance versus voltage characteristics. After annealing treatment, the minority carrier lifetime of the HgCdTe sample presented a slight decrease. Furthermore, the fixed charge density and the slow charge density decreased significantly in the annealed MIS device. After baking treatment, the fixed charge density and the slow charge density of the unannealed and annealed MIS devices decreased and increased, respectively.

  19. A thin layer fiber-coupled luminescence dosimeter based on Al2O3:C

    DEFF Research Database (Denmark)

    Klein, F.A.; Greilich, Steffen; Andersen, Claus Erik

    2011-01-01

    In this paper we present a fiber-coupled luminescent Al2O3:C dosimeter probe with high spatial resolution (0.1 mm). It is based on thin layers of Al2O3:C crystal powder and a UV-cured acrylate monomer composition. The fabrication of the thin layers is described in detail. No influence of the intr......In this paper we present a fiber-coupled luminescent Al2O3:C dosimeter probe with high spatial resolution (0.1 mm). It is based on thin layers of Al2O3:C crystal powder and a UV-cured acrylate monomer composition. The fabrication of the thin layers is described in detail. No influence...... of the introduced polymer host matrix on the dosimetric properties was observed. Depth-dose measurements with the new detectors in a 142.66 MeV proton and 270.55 MeV/u carbon ion beam are presented as example applications. We used an RL protocol with saturated crystals allowing for time-effective measurements...... without sensitivity corrections. For protons, a relative luminescence efficiency hHCP of 0.715 0.014 was found in the Bragg peak. For carbon ions, a value of 0.498 0.001 was found in the entrance channel, 0.205 0.015 in the Bragg peak, and a mean of 0.413 0.050 in the tail region. The mean range...

  20. Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers.

    Science.gov (United States)

    Wilt, Jamie; Sakidja, Ridwan; Goul, Ryan; Wu, Judy Z

    2017-10-25

    Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al 2 O 3 dielectric films of 1-6 Å's in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate IL formation, in situ high vacuum sputtering atomic layer deposition (ALD) to synthesize Al 2 O 3 on Al films, and in situ ultrahigh vacuum scanning tunneling spectroscopy to probe the electron tunneling through the Al 2 O 3 . The IL had a profound effect on electron tunneling. We observed a reduced tunnel barrier height and soft-type dielectric breakdown which indicate that defects are present in both the IL and in the Al 2 O 3 . The IL forms primarily due to exposure of the Al to trace O 2 and/or H 2 O during the pre-ALD heating step of fabrication. As the IL was systematically reduced, by controlling the pre-ALD sample heating, we observed an increase of the ALD Al 2 O 3 barrier height from 0.9 to 1.5 eV along with a transition from soft to hard dielectric breakdown. This work represents a key step toward the realization of high-quality, atomically thin dielectrics with electron tunneling for the next generation of microelectronics.

  1. Antireflective bilayer coatings based on Al2O3 film for UV region

    OpenAIRE

    Marszałek Konstanty; Winkowski Paweł; Marszałek Marta

    2015-01-01

    Bilayer antireflective coatings consisting of aluminium oxide Al2O3/MgF2 and Al2O3/SiO2 are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5 × 10-3 Pa in the presence of oxygen, and magnesium fluoride was prepared by thermal evaporation on heated optical lenses made from quartz glass (Corning HPFS). Substrate temperature was maintained at 250 _C during the deposition. Thickness and deposition rate were controlled with a thickness measuring syste...

  2. Structural Characteristics and Magnetic Properties of Al2O3 Matrix-Based Co-Cermet Nanogranular Films

    Directory of Open Access Journals (Sweden)

    Giap Van Cuong

    2015-01-01

    Full Text Available Magnetic micro- and nanogranular materials prepared by different methods have been used widely in studies of magnetooptical response. However, among them there seems to be nothing about magnetic nanogranular thin films prepared by a rf cosputtering technique for both metals and insulators till now. This paper presented and discussed preparation, structural characteristics, and magnetic properties of alumina (Al2O3 matrix-based granular Co-cermet thin films deposited by means of the cosputtering technique for both Co and Al2O3. By varying the ferromagnetic (Co atomic fraction, x, from 0.04 to 0.63, several dominant features of deposition for these thin films were shown. Structural characteristics by X-ray diffraction confirmed a cermet-type structure for these films. Furthermore, magnetic behaviours presented a transition from paramagnetic- to superparamagnetic- and then to ferromagnetic-like properties, indicating agglomeration and growth following Co components of Co clusters or nanoparticles. These results show a typical granular Co-cermet feature for the Co-Al2O3 thin films prepared, in which Co magnetic nanogranules are dispersed in a ceramic matrix. Such nanomaterials can be applied suitably for our investigations in future on the magnetooptical responses of spinplasmonics.

  3. Antireflective bilayer coatings based on Al2O3 film for UV region

    Directory of Open Access Journals (Sweden)

    Marszałek Konstanty

    2015-03-01

    Full Text Available Bilayer antireflective coatings consisting of aluminium oxide Al2O3/MgF2 and Al2O3/SiO2 are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5 × 10-3 Pa in the presence of oxygen, and magnesium fluoride was prepared by thermal evaporation on heated optical lenses made from quartz glass (Corning HPFS. Substrate temperature was maintained at 250 _C during the deposition. Thickness and deposition rate were controlled with a thickness measuring system Inficon XTC/2. The experimental results of the optical measurements carried out during and after the deposition process have been presented. Physical thickness measurements were made during the deposition process and resulted in 44 nm/52 nm for Al2O3/MgF2 and 44 nm/50 nm for Al2O3/SiO2 system. Optimization was carried out for ultraviolet region with minimum of reflectance at 300 nm. The influence of post deposition annealing on the crystal structure was determined by X-ray measurements. In the range from ultraviolet to the beginning of visible region, the reflectance of both systems decreased and reached minimum at 290 nm. The value of reflectance at this point, for the coating Al2O3/MgF2 was equal to R290nm = 0.6 % and for Al2O3/SiO2R290nm = 1.1 %. Despite the difference between these values both are sufficient for applications in the UV optical systems for medicine and UV laser technology.

  4. Argon Ion Irradiation Effect on the Magnetic Properties of Fe-Al2O3 Nano Granular Film

    Directory of Open Access Journals (Sweden)

    Setyo Purwanto

    2014-10-01

    Full Text Available We studied the effect of Argon (Ar ion irradiation on Fe-Al2O3 nanogranular thin film. X-ray diffraction (XRD patterns show that the ion dose might promote the growth of the Fe2O3 phase from an amorphous phase to a crystalline phase. The magnetic and magnetoresistance properties were investigated using a vibrating sample magnetometer (VSM and a four point probe (FPP. The results suggest that percolation concentration occurred at the 0.55 Fe volume fraction and with a maximum magnetoresistance (MR ratio of 3%. The present MR ratio was lower than that of previous results, which might be related to the existence of the α-Fe2O3 phase promoted by Ar ion irradiation. CEMS spectra show ion irradiation induces changes from superparamagnetic characteristics to ferromagnetic ones, which indicates the spherical growth of Fe particles in the Al2O3 matrix.

  5. Investigation of Al2O3 barrier film properties made by atomic layer deposition onto fluorescent tris-(8-hydroxyquinoline) aluminium molecular films

    International Nuclear Information System (INIS)

    Maindron, Tony; Aventurier, Bernard; Ghazouani, Ahlem; Jullien, Tony; Rochat, Névine; Simon, Jean-Yves; Viasnoff, Emilie

    2013-01-01

    Al 2 O 3 films have been deposited at 85 °C by atomic layer deposition onto single 100 nm thick tris-(8-hydroxyquinoline) aluminium (AlQ 3 ) films made onto silicon wafers. It has been found that a thick ALD-deposited Al 2 O 3 layer (> 11 nm) greatly prevents the photo-oxidation of AlQ 3 films when exposed to continuous UV irradiation (350 mW/cm 2 ). Thin Al 2 O 3 thicknesses (< 11 nm) on the contrary yield lower barrier performances. Defects in the Al 2 O 3 layer have been easily observed as non-fluorescent AlQ 3 singularities, or black spots, under UV light on the system Si/AlQ 3 /Al 2 O 3 stored into laboratory conditions (22 °C/50% Relative Humidity (RH)) for long time scale (∼ 2000 h). Accelerated aging conditions in a climatic chamber (85 °C/85% RH) also allow faster visualization of the same defects (168 h). The black spot density grows upon time and the black spot density occurrence rates have been calculated to be 0.024 h −1 ·cm −2 and 0.243 h −1 ·cm −2 respectively for the two testing conditions. A detailed investigation of these defects did show that they cannot be ascribed to the presence of a detectable particle. In that sense they are presumably the consequence of the existence of nanometre-scaled defects which cannot be detected onto fresh samples. Interestingly, an additional overcoating of ebeam-deposited SiO 2 onto the Si/AlQ 3 /Al 2 O 3 sample helps to decrease drastically the black spot density occurrence rates down to 0.004 h −1 ·cm −2 and 0.04 h −1 ·cm −2 respectively for 22 °C/50% RH and 85 °C/85% RH testing conditions. These observations highlight the moisture sensitivity of low temperature ALD-deposited Al 2 O 3 films and confirm the general idea that a single Al 2 O 3 ALD film performs as an ultra-high barrier but needs to be overprotected from water condensation by an additional moisture-stable layer. - Highlights: • Thin Al 2 O 3 films have been deposited by atomic layer deposition onto organic films.

  6. Microdefects in Al2O3 films and interfaces revealed by positron lifetime spectroscopy

    International Nuclear Information System (INIS)

    Xu, J.; Somieski, B.; Hulett, L.D.; Pint, B.A.; Tortorelli, P.F.; Suzuki, R.; Ohdaira, T.

    1997-01-01

    We have studied microdefects and interfaces of Al 2 O 3 films on iron and nickel aluminide substrates using variable-energy positron lifetime spectroscopy. Di-vacancies, vacancy clusters, and microvoids were observed in the oxide scales. Their sizes and distributions were determined by the nature of the process used to synthesize the alumina film, and influenced by the composition of the alloy substrates. For oxide endash iron aluminide interfaces, positron lifetimes are longer than those for the alumina layer itself, suggesting a greater defect concentration at such sites. copyright 1997 American Institute of Physics

  7. Preparation and characterization of carbonate terminated polycrystalline Al2O3/Al films

    International Nuclear Information System (INIS)

    Tornow, C.; Noeske, P.-L.M.; Dieckhoff, S.; Wilken, R.; Gaertner, K.

    2005-01-01

    X-ray photoelectron spectroscopy (XPS) was applied to investigate the surface reactivity of polycrystalline Al films in contact with a gas mixture of carbon dioxide and oxygen at room temperature. Based on the characterization of interactions between these substrates and the individual gases at selected exposures, various surface functionalities were identified. Simultaneously dosing both carbon dioxide and oxygen is shown to create surface-terminating carbonate species, which contribute to inhibiting the formation of an Al 2 O 3 layer. Finally, a reaction scheme is suggested to account for the observed dependence of surface group formation on the dosing conditions

  8. Improving the photoluminescence response of Er-Tm: Al2O3 films by Yb codoping

    International Nuclear Information System (INIS)

    Xiao Zhisong; Serna, R.; Afonso, C.N.; Cheng Guoan; Vickridge, I.

    2007-01-01

    Amorphous Al 2 O 3 films doped with Er, Tm and Yb have been prepared by pulsed laser deposition. A broadband emission in the range 1400-1700 nm with two peaks around 1540 and 1640 nm has been observed, both in the Er-Tm and Er-Tm-Yb codoped films. The Tm-related photoluminescence (PL) intensity at 1640 nm is enhanced when codoping with Yb thus suggesting the existence of multiple energy transfer processes from Yb to Er and Er to Tm. The Er-Tm-Yb codoped film exhibits a broadband emission with a full-width half-maximum of 184 nm similar to that of the film codoped with Tm and Er but having higher Tm to Er concentration ratio and higher PL lifetime values

  9. Effects of UV-Ozone Treatment on Sensing Behaviours of EGFETs with Al2O3 Sensing Film

    Directory of Open Access Journals (Sweden)

    Cuiling Sun

    2017-12-01

    Full Text Available The effects of UV-ozone (UVO treatment on the sensing behaviours of extended-gate field-effect transistors (EGFETs that use Al2O3 as the sensing film have been investigated. The Al2O3 sensing films are UVO-treated with various duration times and the corresponding EGFET sensing behaviours, such as sensitivity, hysteresis, and long-term stability, are electrically evaluated under various measurement conditions. Physical analysis is also performed to characterize the surface conditions of the UVO-treated sensing films using X-ray photoelectron spectroscopy and atomic force microscopy. It is found that UVO treatment effectively reduces the buried sites in the Al2O3 sensing film and subsequently results in reduced hysteresis and improved long-term stability of EGFET. Meanwhile, the observed slightly smoother Al2O3 film surface post UVO treatment corresponds to decreased surface sites and slightly reduced pH sensitivity of the Al2O3 film. The sensitivity degradation is found to be monotonically correlated with the UVO treatment time. A treatment time of 10 min is found to yield an excellent performance trade-off: clearly improved long-term stability and reduced hysteresis at the cost of negligible sensitivity reduction. These results suggest that UVO treatment is a simple and facile method to improve the overall sensing performance of the EGFETs with an Al2O3 sensing film.

  10. Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN

    Science.gov (United States)

    Hiraiwa, Atsushi; Sasaki, Toshio; Okubo, Satoshi; Horikawa, Kiyotaka; Kawarada, Hiroshi

    2018-04-01

    Atomic-layer-deposited (ALD) Al2O3 films are the most promising surface passivation and gate insulation layers in non-Si semiconductor devices. Here, we carried out an extensive study on the time-dependent dielectric breakdown characteristics of ALD-Al2O3 films formed on homo-epitaxial GaN substrates using two different oxidants at two different ALD temperatures. The breakdown times were approximated by Weibull distributions with average shape parameters of 8 or larger. These values are reasonably consistent with percolation theory predictions and are sufficiently large to neglect the wear-out lifetime distribution in assessing the long-term reliability of the Al2O3 films. The 63% lifetime of the Al2O3 films increases exponentially with a decreasing field, as observed in thermally grown SiO2 films at low fields. This exponential relationship disproves the correlation between the lifetime and the leakage current. Additionally, the lifetime decreases with measurement temperature with the most remarkable reduction observed in high-temperature (450 °C) O3-grown films. This result agrees with that from a previous study, thereby ruling out high-temperature O3 ALD as a gate insulation process. When compared at 200 °C under an equivalent SiO2 field of 4 MV/cm, which is a design guideline for thermal SiO2 on Si, high-temperature H2O-grown Al2O3 films have the longest lifetimes, uniquely achieving the reliability target of 20 years. However, this target is accomplished by a relatively narrow margin and, therefore, improvements in the lifetime are expected to be made, along with efforts to decrease the density of extrinsic Al2O3 defects, if any, to promote the practical use of ALD Al2O3 films.

  11. Fabrication of Al2O3 Nano-Structure Functional Film on a Cellulose Insulation Polymer Surface and Its Space Charge Suppression Effect

    Directory of Open Access Journals (Sweden)

    Jian Hao

    2017-10-01

    Full Text Available Cellulose insulation polymer (paper/pressboard has been widely used in high voltage direct current (HVDC transformers. One of the most challenging issues in the insulation material used for HVDC equipment is the space charge accumulation. Effective ways to suppress the space charge injection/accumulation in insulation material is currently a popular research topic. In this study, an aluminium oxide functional film was deposited on a cellulose insulation pressboard surface using reactive radio frequency (RF magnetron sputtering. The sputtered thin film was characterized by the scanning electron microscopy/energy dispersive spectrometer (SEM/EDS, X-ray photoelectron spectroscopy (XPS, and X-ray diffraction (XRD. The influence of the deposited functional film on the dielectric properties and the space charge injection/accumulation behaviour was investigated. A preliminary exploration of the space charge suppression effect is discussed. SEM/EDS, XPS, and XRD results show that the nano-structured Al2O3 film with amorphous phase was successfully fabricated onto the fibre surface. The cellulose insulation pressboard surface sputtered by Al2O3 film has lower permittivity, conductivity, and dissipation factor values in the lower frequency (<103 Hz region. The oil-impregnated sputtered pressboard presents an apparent space-charge suppression effect. Compared with the pressboard sputtered with Al2O3 film for 90 min, the pressboard sputtered with Al2O3 film for 60 min had a better space charge suppression effect. Ultra-small Al2O3 particles (<10 nm grew on the surface of the larger nanoparticles. The nano-structured Al2O3 film sputtered on the fibre surface could act as a functional barrier layer for suppression of the charge injection and accumulation. This study offers a new perspective in favour of the application of insulation pressboard with a nano-structured function surface against space charge injection/accumulation in HVDC equipment.

  12. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

    Science.gov (United States)

    Zhang, Peng; Ye, Zhen-Hua; Sun, Chang-Hong; Chen, Yi-Yu; Zhang, Tian-Ning; Chen, Xin; Lin, Chun; Ding, Ring-Jun; He, Li

    2016-09-01

    The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage ( C- V) characteristics of metal-insulator-semiconductor devices, and resistance versus voltage ( R- V) characteristics of variable-area photodiodes. The minority carrier lifetime, C- V characteristics, and R- V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

  13. Annealing effects on electron-beam evaporated Al2O3 films

    International Nuclear Information System (INIS)

    Shang Shuzhen; Chen Lei; Hou Haihong; Yi Kui; Fan Zhengxiu; Shao Jianda

    2005-01-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2 O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 deg. C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 deg. C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given

  14. Annealing effects on electron-beam evaporated Al 2O 3 films

    Science.gov (United States)

    Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

    2005-04-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

  15. Conduction mechanisms in thin atomic layer deposited Al2O3 layers

    International Nuclear Information System (INIS)

    Spahr, Holger; Montzka, Sebastian; Reinker, Johannes; Hirschberg, Felix; Kowalsky, Wolfgang; Johannes, Hans-Hermann

    2013-01-01

    Thin Al 2 O 3 layers of 2–135 nm thickness deposited by thermal atomic layer deposition at 80 °C were characterized regarding the current limiting mechanisms by increasing voltage ramp stress. By analyzing the j(U)-characteristics regarding ohmic injection, space charge limited current (SCLC), Schottky-emission, Fowler-Nordheim-tunneling, and Poole-Frenkel-emission, the limiting mechanisms were identified. This was performed by rearranging and plotting the data in a linear scale, such as Schottky-plot, Poole-Frenkel-plot, and Fowler-Nordheim-plot. Linear regression then was applied to the data to extract the values of relative permittivity from Schottky-plot slope and Poole-Frenkel-plot slope. From Fowler-Nordheim-plot slope, the Fowler-Nordheim-energy-barrier was extracted. Example measurements in addition to a statistical overview of the results of all investigated samples are provided. Linear regression was applied to the region of the data that matches the realistic values most. It is concluded that ohmic injection and therefore SCLC only occurs at thicknesses below 12 nm and that the Poole-Frenkel-effect is no significant current limiting process. The extracted Fowler-Nordheim-barriers vary in the range of up to approximately 4 eV but do not show a specific trend. It is discussed whether the negative slope in the Fowler-Nordheim-plot could in some cases be a misinterpreted trap filled limit in the case of space charge limited current

  16. Dynamic Friction Performance of a Pneumatic Cylinder with Al2O3 Film on Cylinder Surface.

    Science.gov (United States)

    Chang, Ho; Lan, Chou-Wei; Wang, Hao-Xian

    2015-11-01

    A friction force system is proposed for accurately measuring friction force and motion properties produced by reciprocating motion of piston in a pneumatic cylinder. In this study, the proposed system is used to measure the effects of lubricating greases of different viscosities on the friction properties of pneumatic cylinder, and improvement of stick-slip motion for the cylinder bore by anodizing processes. A servo motor-driven ball screw is used to drive the pneumatic cylinder to be tested and to measure the change in friction force of the pneumatic cylinder. Experimental results show, that under similar test conditions, the lubricating grease with viscosity VG100 is best suited for measuring reciprocating motion of the piston of pneumatic cylinder. The wear experiment showed that, in the Al2O3 film obtained at a preset voltage 40 V in the anodic process, the friction coefficient and hardness decreased by 55% and increased by 274% respectively, thus achieving a good tribology and wear resistance. Additionally, the amplitude variation in the friction force of the pneumatic cylinder wall that received the anodizing treatment was substantially reduced. Additionally, the stick-slip motion of the pneumatic cylinder during low-speed motion was substantially improved.

  17. Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

    DEFF Research Database (Denmark)

    Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

    2016-01-01

    Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.......Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved....

  18. Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

    Directory of Open Access Journals (Sweden)

    Kyosuke Seya

    2015-01-01

    Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

  19. Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

    Directory of Open Access Journals (Sweden)

    Jörg Haeberle

    2013-11-01

    Full Text Available We report on results on the preparation of thin (2O3 films on silicon substrates using thermal atomic layer deposition (T-ALD and plasma enhanced atomic layer deposition (PE-ALD in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

  20. Use of fluorescence to probe the surface dynamics during disorder-to-order transition and cluster formation in dihalonaphthalene-water thin films on Al2O3(0001)

    International Nuclear Information System (INIS)

    Evans, M.A.; Hoss, D.R.; Howard, K.E.; Louie, A.D.; Bishop, A.J.; Martin, K.A.; Nishimura, A.M.

    2006-01-01

    Amorphous dihalonaphthalenes that are prepared by vacuum deposition onto a cold Al 2 O 3 surface form electronically excited dimers when optically pumped, and their emission is characteristically red-shifted, broad and featureless compared to the monomeric fluorescence. If the surface is heated, the adlayer undergoes a disorder-to-order transition at a temperature characteristic of the molecule. Since pure crystalline dihalonaphthalenes typically fluoresce and do not exhibit excimeric features, the transition was studied by taking advantage of the changes in the spectral characteristics of the adlayer. These included transmittance, and emission from fluorescence and excimer. The combination of these methods allowed a close look at the surface dynamics of molecules on the surface of Al 2 O 3 as the adlayer was heated from the deposition temperature to desorption. If a bilayer is formed by depositing water onto the surface with the organic adlayer on top, water, with its lower desorption energy, can be made to percolate into the organic layer. The optical probes indicate that the water clearly associates with the organic molecules while the excess water desorbs. By varying the coverage of either the water or the dihalonaphthalene, the stoichiometric composition of the cluster can be determined and are reported here

  1. Effect of TiO2/Al2O3 film coated diamond abrasive particles by sol-gel technique

    Science.gov (United States)

    Hu, Weida; Wan, Long; Liu, Xiaopan; Li, Qiang; Wang, Zhiqi

    2011-04-01

    The diamond abrasive particles were coated with the TiO2/Al2O3 film by the sol-gel technique. Compared with the uncoated diamonds, the TiO2/Al2O3 film was excellent material for the protection of the diamonds. The results showed that the incipient oxidation temperature of the TiO2/Al2O3 film coated diamonds in air atmosphere was 775 °C, which was higher 175 °C than that of the uncoated diamonds. And the coated diamonds also had better the diamond's single particle compressive strength and the impact toughness than that of uncoated diamonds after sintering at 750 °C. For the vitrified bond grinding wheels, replacing the uncoated diamonds with the TiO2/Al2O3 film coated diamonds, the volume expansion of the grinding wheels decreased from 6.2% to 3.4%, the porosity decreased from 35.7% to 25.7%, the hardness increased from 61.2HRC to 66.5HRC and the grinding ratio of the vitrified bond grinding wheels to carbide alloy (YG8) increased from 11.5 to 19.1.

  2. Development of nano-sized α-Al2O3:C films for application in digital radiology

    International Nuclear Information System (INIS)

    Silva, Edna C.

    2011-01-01

    Ceramic materials are widely used as sensors for ionizing radiation. In nuclear applications, the alpha-alumina doped with carbon (α-Al 2 O 3 :C) is the most widely ceramic used because of its excellent optically stimulated luminescence (OSL) and thermoluminescent (TL) properties applied to detection of ionizing radiation. Another application of OSL and TL materials are in Digital Radiography, with ceramic/polymeric film composites. Recently, Computed Radiography (CR) devices based on OSL materials are replacing the old conventional film radiography. In this study we investigate the thermoluminescence of nano-sized α-Al 2 O 3 samples doped with different percentages of carbon, sintered in reducing atmospheres at temperatures ranging from 1300 to 1750 deg C. The results indicate that the nano-sized α-Al 2 O 3 :C materials have a luminescent response that could be due to both OSL and RPL properties, but without application to radiation dosimetry. Moreover, the results indicate that micro-sized α-Al 2 O 3 :C, doped with 0.5% carbon, and nano-sized ones doped with 2% of carbon, present thermoluminescent signal around 30 to 100 times the TL output signal of commercial TLD-100, the most used TL dosimeter in the world. The results indicate that these ceramic nano-particles have great potential for use in Digital Radiography based on thermoluminescent film imaging, being able to provide image resolutions much higher than the micro-sized α-Al 2 O 3 :C, in view of their improved resolution provided by nano-particulates. (author)

  3. Development of α - Al_2O_3:C films nanoparticulate for application in digital radiology

    International Nuclear Information System (INIS)

    Silva, Edna C.; Fontainha, Crissia C.; Ferraz, Wilmar B.; Faria, Luiz O.

    2011-01-01

    Phosphorescent ceramics are widely used in Ionizing radiation sensors. In nuclear applications, alpha-alumina doped with carbon (α-Al_2O_3: C) is most commonly used because of its excellent properties photoluminescent (OSL) and thermoluminescent (TL) in ionizing radiation detections. Another application of OSL and TL materials is the use in digital radiography. Recently, Computerized Radiography (CR) equipment, which use OSL materials, have been replacing the old X-ray devices. In this work we investigated the thermoluminescence of α-Al_2O_3 doped with different percentages of carbon, sintered in reducing atmospheres, in temperatures from 1300 to 1750 ° C. The results indicate that micro alumina doped with 0.5% of carbon and nano-alumina doped with 2% of carbon present TL signal of the order of 30 to 100 times the signal of the TLD-100, the most widely used TL dosimeter in the world. The results indicate that α-Al_2O_3: C nano-particulate has great potential for application in digital thermoluminescent radiography, because of its high TL response to radiation Ionization and the possibility of forming TL digital images with resolution increased by about 1000 times, depending on the size of the nanoparticles

  4. Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

    International Nuclear Information System (INIS)

    Zhang Xiang; Liu Bang-Wu; Li Chao-Bo; Xia Yang; Zhao Yan

    2013-01-01

    Chemical and field-effect passivation of atomic layer deposition (ALD) Al 2 O 3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 °C and 500 °C, while the improvement is quite weak at 600 °C, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al 2 O 3 /Si interface structural change. The Al—OH groups play an important role in chemical passivation, and the Al—OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

    International Nuclear Information System (INIS)

    Hai-Qing, Xiao; Chun-Lan, Zhou; Xiao-Ning, Cao; Wen-Jing, Wang; Lei, Zhao; Hai-Ling, Li; Hong-Wei, Diao

    2009-01-01

    Al 2 O 3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 10 12 cm −2 is detected in the Al 2 O 3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO 2 and plasma enhanced chemical vapor deposition SiN x :H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al 2 O 3 . (cross-disciplinary physics and related areas of science and technology)

  6. Influence of thin porous Al2O3 layer on aluminum cathode to the Hα line shape in glow discharge

    International Nuclear Information System (INIS)

    Steflekova, V.; Sisovic, N. M.; Konjevic, N.

    2009-01-01

    The results of the Balmer alfa line shape study in a plane cathode-hollow anode Grimm discharge with aluminum (Al) cathode covered with thin layer of porous Al 2 O 3 are presented. The comparison with same line profile recorded with pure Al cathode shows lack of excessive Doppler broadened line wings, which are always detected in glow discharge with metal cathode. The effect is explained by the lack of strong electric field in the cathode sheath region, which is missing in the presence of thin oxide layer in, so called, spray discharge.

  7. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

    Science.gov (United States)

    Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

    2013-03-02

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

  8. Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

    Science.gov (United States)

    Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

    2017-05-01

    Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

  9. Temperature dependence of microstructure and strain evolution in strained ZnO films on Al2O3(0001)

    International Nuclear Information System (INIS)

    Kim, In-Woo; Lee, Kyu-Mann

    2008-01-01

    We have studied the temperature dependence of the growth mode and microstructure evolution in highly mismatched sputter-grown ZnO/Al 2 O 3 (0001) heteroepitaxial films. The growth mode was studied by real-time synchrotron x-ray scattering. We find that the growth mode changes from a two-dimensional (2D) layer to a 3D island in the early growth stage with temperature (300-600 deg. C), in sharp contrast to the reported transition from three dimensions to two dimensions in metal-organic vapor phase epitaxy. At around 400 deg. C intermediate 2D platelets nucleate in the early stage, which act as nucleation cores of 3D islands and transform to a misaligned state during further growth. Meanwhile, at high temperature (above 500 deg. C), the spinel structure of ZnAl 2 O 4 grows in the early stage, and it undergoes a transition to wurtzite-ZnO (w-ZnO) with thickness. The spinel formation is presumably driven by high temperature and large incident energy of impacting atoms during sputtering. The results of the strain evolution as functions of temperature and thickness during growth suggest that the surface diffusion is a major factor determining the microstructural properties in the strained ZnO/Al 2 O 3 (0001) heteroepitaxy

  10. For progress in natural science: Materials international investigations of structural phase transformation and THz properties across metal–insulator transition in VO2/Al2O3 epitaxial films

    Directory of Open Access Journals (Sweden)

    Mengmeng Yang

    2015-10-01

    Full Text Available Vanadium dioxide (VO2 epitaxial thin films on (0001-oriented Al2O3 substrates were prepared using radio frequency (RF magnetron sputtering techniques. To study the metal-insulator-transition (MIT mechanism and extend the applications of VO2 epitaxial films at terahertz (THz band, temperature-dependent X-ray diffraction (XRD and THz time domain spectroscopy of the VO2 epitaxial films were performed. Both the lattice constants and THz transmission exhibited a similar and sharp transition that was similar to that observed for the electrical resistance. Consequently, the MIT of the VO2/Al2O3 epitaxial films should be co-triggered by the structural phase transition and electronic transition. Moreover, the very large resistance change (on the order of ~103 and THz response (with a transmission modulation ratio of ~87% in the VO2/Al2O3 epitaxial heterostructures are promising for electrical switch and electro-optical device applications.

  11. Synthesis of Vertically-Aligned Carbon Nanotubes from Langmuir-Blodgett Films Deposited Fe Nanoparticles on Al2O3/Al/SiO2/Si Substrate.

    Science.gov (United States)

    Takagiwa, Shota; Kanasugi, Osamu; Nakamura, Kentaro; Kushida, Masahito

    2016-04-01

    In order to apply vertically-aligned carbon nanotubes (VA-CNTs) to a new Pt supporting material of polymer electrolyte fuel cell (PEFC), number density and outer diameter of CNTs must be controlled independently. So, we employed Langmuir-Blodgett (LB) technique for depositing CNT growth catalysts. A Fe nanoparticle (NP) was used as a CNT growth catalyst. In this study, we tried to thicken VA-CNT carpet height and inhibit thermal aggregation of Fe NPs by using Al2O3/Al/SiO2/Si substrate. Fe NP LB films were deposited on three typed of substrates, SiO2/Si, as-deposited Al2O3/Al/SiO2/Si and annealed Al2O3/Al/SiO2/Si at 923 K in Ar atmosphere of 16 Pa. It is known that Al2O3/Al catalyzes hydrocarbon reforming, inhibits thermal aggregation of CNT growth catalysts and reduces CNT growth catalysts. It was found that annealed Al2O3/Al/SiO2/Si exerted three effects more strongly than as-deposited Al2O3/Al/SiO2/Si. VA-CNTs were synthesized from Fe NPs-C16 LB films by thermal chemical vapor deposition (CVD) method. As a result, at the distance between two nearest CNTs 28 nm or less, VA-CNT carpet height on annealed Al2O3/Al/SiO2/Si was about twice and ten times thicker than that on SiO2/Si and that on as-deposited Al2O3/Al/SiO2/Si, respectively. Moreover, distribution of CNT outer diameter on annealed Al2O3/Al/SiO2/Si was inhibited compared to that on SiO2/Si. These results suggest that since thermal aggregation of Fe NPs is inhibited, catalyst activity increases and distribution of Fe NP size is inhibited.

  12. Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

    Directory of Open Access Journals (Sweden)

    Neha Batra

    2015-06-01

    Full Text Available The effect of deposition temperature (Tdep and subsequent annealing time (tanl of atomic layer deposited aluminum oxide (Al2O3 films on silicon surface passivation (in terms of surface recombination velocity, SRV is investigated. The pristine samples (as-deposited show presence of positive fixed charges, QF. The interface defect density (Dit decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min.

  13. Comparison between Al2O3 surface passivation films deposited with thermal ALD, plasma ALD and PECVD

    NARCIS (Netherlands)

    Dingemans, G.; Engelhart, P.; Seguin, R.; Mandoc, M.M.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2010-01-01

    Surface passivation schemes based on Al2O3 have enabled increased efficiencies for silicon solar cells. The key distinguishing factor of Al2O3 is the high fixed negative charge density (Qf = 1012-1013 cm-2), which is especially beneficial for p- and p+ type c-Si, as it leads to a high level of

  14. The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD.

    Science.gov (United States)

    Feng, Xing-Yao; Liu, Hong-Xia; Wang, Xing; Zhao, Lu; Fei, Chen-Xi; Liu, He-Lei

    2017-12-01

    The capacitance and leakage current properties of multilayer La 2 O 3 /Al 2 O 3 dielectric stacks and LaAlO 3 dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La 2 O 3 /Al 2 O 3 stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO 3 dielectric film, compared with multilayer La 2 O 3 /Al 2 O 3 dielectric stacks, a clear promotion of trapped charges density (N ot ) and a degradation of interface trap density (D it ) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO 3 dielectric film compared with multilayer La 2 O 3 /Al 2 O 3 stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La 2 O 3 /Al 2 O 3 stack is achieved after annealing at a higher temperature for its less defects.

  15. Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

    Science.gov (United States)

    Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

    2018-04-01

    Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

  16. Subcooled film boiling heat transfer on a high temperature sphere in very dilute Al2O3 nano-fluids

    International Nuclear Information System (INIS)

    Hyun Sun Park; Dereje Shiferaw; Bal Raj Sehgal

    2005-01-01

    Full text of publication follows: nano-fluids, or conventional liquids, e.g., water, with small concentration of nano-particles uniformly suspended, have attracted attention as a new heat transport medium with enhanced thermo-physical properties. Up to the present, only exploratory experiments on nano-fluids have been reported. Das et al (Int. J. Heat Mass Transfer 43, pp 3701-3707, 2003) conducted boiling experiments with water containing 38 nm Al 2 O 3 nano-particles. They observed deterioration in the nucleate boiling heat transfer due to the deposition of nano-particles. Boiling experiments conducted by Vassallo et al (Int. J. Heat Mass Transfer 47, pp 407-411, 2004) using silica nano-fluid using 0.4 mm diameter NiCr wire showed three times higher critical heat flux (CHF) and the wire traversed the film boiling region before it failed. Another independent experiment performed on 1 cm 2 square plate with a very low concentration of nano-particles ranging from 0.01 to 0.05 g/liter and at under pressure (2.89 psia), nano-fluids resulted in drastic 2∼3 times enhancement of the CHF (You and Kim, Appl. Phys. Lett. 83. No 16, 2003). However in all the aforementioned studies no appropriate explanation of the CHF enhancement has been advanced. The measured 2-3 times higher critical heat flux for very dilute nano-fluids may have high significance if such nano-fluids could be employed in heat transport systems. Recently, we investigated the effect of nano-particles on film boiling, which governs heat transfer during accident conditions in a reactor plant, e.g., in coolability of a degraded core, or a particulate debris bed or a core melt, and in steam explosions. Our previous experiments performed on film boiling in nano-fluids having larger concentrations of 5, 10, and 20 g/liter than those in You's experiments showed that the nano-fluids lower the film boiling temperature, decrease the film boiling heat transfer and provide a much thicker and more stable film than

  17. DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets

    International Nuclear Information System (INIS)

    Miccoli, I.; Spampinato, R.; Marzo, F.; Prete, P.; Lovergine, N.

    2014-01-01

    Highlights: • ZnO:Al was DC-sputtered on sapphire >350 °C by slip-casting sintered AZO target. • Films are highly (00.1)-oriented, smooth and transparent in the NIR–visible range. • Films growth rate decreases with temperature, while their grain size increases. • A high temperature reduction for sticking coefficients of impinging species is proved. • We prove that Thornton model does not apply to high-temperature DC-sputtered ZnO. - Abstract: High (>350 °C) temperature DC-sputtering deposition of ZnO:Al thin films onto single-crystal (00.1) oriented Al 2 O 3 (sapphire) substrates is reported, using a ultrahigh-density, low-resistivity and low-cost composite ceramic target produced by slip-casting (pressureless) sintering of ZnO–Al 2 O 3 (AZO) powders. The original combination of high-angle θ–2θ (Bragg–Brentano geometry) X-ray diffraction with low angle θ–2θ X-ray reflectivity (XRR) techniques allows us to define the AZO target composition and investigate the structural properties and surface/interface roughness of as-sputtered ZnO:Al films; besides, the growth dynamics of ZnO:Al is unambiguously determined. The target turned out composed of the sole wurtzite ZnO and spinel ZnAl 2 O 4 phases. X-ray diffraction analyses revealed highly (00.1)-oriented (epitaxial) ZnO:Al films, the material mean crystallite size being in the 13–20 nm range and increasing with temperature between 350 °C and 450 °C, while the film growth rate (determined via XRR measurements) decreases appreciably. XRR spectra also allowed to determine rms surface roughness <1 nm for present films and showed ZnO:Al density changes by only a few percent between 350 °C and 450 °C. The latter result disproves the often-adopted Thornton model for the description of the sputter-grown ZnO films and instead points out toward a reduction of the sticking coefficients of impinging species, as the main origin of film growth rate and grain size dependence with temperature. Zn

  18. Modification of metal–InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers

    International Nuclear Information System (INIS)

    Chauhan, Lalit; Gupta, Suman; Jaiswal, Piyush; Bhat, Navakanta; Shivashankar, S.A.; Hughes, G.

    2015-01-01

    The effect of inserting ultra-thin atomic layer deposited Al 2 O 3 dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low (Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al 2 O 3 /p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al 2 O 3 interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al 2 O 3 interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al 2 O 3 /n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current–voltage characteristics displayed by these devices. - Highlights: • Investigation of the modification of metal–InGaAs Schottky barrier (SB) behaviour • Improving metal–InGaAs interface by sulphur passivation and ultrathin interlayer • Examine the effect of low work function and high work function metals on SB • Different SB behaviours observed on both n-type InGaAs and p-type InGaAs • Metal/n-InGaAs interface is more strongly pinned than the metal/p-InGaAs interface

  19. Surface passivation by Al2O3 and a-SiNx: H films deposited on wet-chemically conditioned Si surfaces

    NARCIS (Netherlands)

    Bordihn, S.; Mertens, V.; Engelhart, P.; Kersten, K.; Mandoc, M.M.; Müller, J.W.; Kessels, W.M.M.

    2012-01-01

    The surface passivation of p- and n-type silicon by different chemically grown SiO2 films (prepared by HNO3, H2SO4/H2O2 and HCl/H2O2 treatments) was investigated after PECVD of a-SiNx:H and ALD of Al2O3 capping films. The wet chemically grown SiO2 films were compared to thermally grown SiO2 and the

  20. Deposition temperature dependence of material and Si surface passivation properties of O3-based atomic layer deposited Al2O3-based films and stacks

    International Nuclear Information System (INIS)

    Bordihn, Stefan; Mertens, Verena; Müller, Jörg W.; Kessels, W. M. M.

    2014-01-01

    The material composition and the Si surface passivation of aluminum oxide (Al 2 O 3 ) films prepared by atomic layer deposition using Al(CH 3 ) 3 and O 3 as precursors were investigated for deposition temperatures (T Dep ) between 200 °C and 500 °C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H] = 3 at. % at 200 °C to [H]  2 O 3 /SiN x stacks complemented the work and revealed similar levels of surface passivation as single-layer Al 2 O 3 films, both for the chemical and field-effect passivation. The fixed charge density in the Al 2 O 3 /SiN x stacks, reflecting the field-effect passivation, was reduced by one order of magnitude from 3·10 12  cm −2 to 3·10 11  cm −2 when T Dep was increased from 300 °C to 500 °C. The level of the chemical passivation changed as well, but the total level of the surface passivation was hardly affected by the value of T Dep . When firing films prepared at of low T Dep , blistering of the films occurred and this strongly reduced the surface passivation. These results presented in this work demonstrate that a high level of surface passivation can be achieved for Al 2 O 3 -based films and stacks over a wide range of conditions when the combination of deposition temperature and annealing or firing temperature is carefully chosen

  1. Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

    Science.gov (United States)

    Fiorenza, Patrick; Greco, Giuseppe; Schilirò, Emanuela; Iucolano, Ferdinando; Lo Nigro, Raffaella; Roccaforte, Fabrizio

    2018-05-01

    This letter presents time-dependent gate-capacitance transient measurements (C–t) to determine the oxide trapped charges (N ot) in Al2O3 films deposited on recessed AlGaN/GaN heterostructures. The C–t transients acquired at different temperatures under strong accumulation allowed to accurately monitor the gradual electron trapping, while hindering the re-emission by fast traps that may affect conventional C–V hysteresis measurements. Using this method, an increase of N ot from 2 to 6 × 1012 cm‑2 was estimated between 25 and 150 °C. The electron trapping is ruled by an Arrhenius dependence with an activation energy of 0.12 eV which was associated to points defects present in the Al2O3 films.

  2. Improvement in electrical insulating properties of 10-nm-thick Al2O3 film grown on Al/TiN/Si substrate by remote plasma annealing at low temperatures

    International Nuclear Information System (INIS)

    Kim, Jihoon; Song, Jaewon; Kwon, Ohsung; Kim, Sungkeun; Hwang, Cheol Seong; Park, Sang-Hee'Ko; Yun, Sun Jin; Jeong, Jaehack; Hyun, Kwang Soo

    2002-01-01

    The electrical conduction properties of 10-nm-thick atomic-layer deposited Al 2 O 3 thin films with Al bottom and Pt top electrodes were characterized for use in field emission display. The as-deposited films, grown at 300 deg. C, exhibited such a high electrical leakage that their electrical properties could not be measured. However, post-treatment at 300 deg. C under a remote O 2 or H 2 O plasma for 30 min improved the insulating properties of the Al 2 O 3 films. However, the electrical conduction mechanism, particularly in the high field (>4 MV/cm) was not Fowler-Nordheim (F-N) tunneling but was influenced by space charge limited conduction implying that there were many traps inside the dielectric film or the electrode interfaces. Postannealing of the top electrode at 300 deg. C in an oxygen atmosphere resulted in a F-N conduction mechanism by removing the interfacial traps. The calculated barrier height at the Al/Al 2 O 3 interface from the F-N fitting of the current density versus voltage curves using the electron effective mass (m * ) of 0.5 m 0 was approximately 2.0 eV

  3. Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films

    International Nuclear Information System (INIS)

    Hiraiwa, Atsushi; Saito, Tatsuya; Matsumura, Daisuke; Kawarada, Hiroshi

    2015-01-01

    The Al 2 O 3 film formed using an atomic layer deposition (ALD) method with trimethylaluminum as Al precursor and H 2 O as oxidant at a high temperature (450 °C) effectively passivates the p-type surface conduction (SC) layer specific to a hydrogen-terminated diamond surface, leading to a successful operation of diamond SC field-effect transistors at 400 °C. In order to investigate this excellent passivation effect, we carried out an isotope analysis using D 2 O instead of H 2 O in the ALD and found that the Al 2 O 3 film formed at a conventional temperature (100 °C) incorporates 50 times more CH 3 groups than the high-temperature film. This CH 3 is supposed to dissociate from the film when heated afterwards at a higher temperature (550 °C) and causes peeling patterns on the H-terminated surface. The high-temperature film is free from this problem and has the largest mass density and dielectric constant among those investigated in this study. The isotope analysis also unveiled a relatively active H-exchange reaction between the diamond H-termination and H 2 O oxidant during the high-temperature ALD, the SC still being kept intact. This dynamic and yet steady H termination is realized by the suppressed oxidation due to the endothermic reaction with H 2 O. Additionally, we not only observed the kinetic isotope effect in the form of reduced growth rate of D 2 O-oxidant ALD but found that the mass density and dielectric constant of D 2 O-grown Al 2 O 3 films are smaller than those of H 2 O-grown films. This is a new type of isotope effect, which is not caused by the presence of isotopes in the films unlike the traditional isotope effects that originate from the presence of isotopes itself. Hence, the high-temperature ALD is very effective in forming Al 2 O 3 films as a passivation and/or gate-insulation layer of high-temperature-operation diamond SC devices, and the knowledge of the aforementioned new isotope effect will be a basis for further enhancing ALD

  4. Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition.

    Science.gov (United States)

    Jia, Endong; Zhou, Chunlan; Wang, Wenjing

    2015-01-01

    Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ellipsometry, and the passivation effect of alumina on n-type silicon before and after annealing was measured by microwave photoconductivity decay method. Also, the effects of deposition temperature and annealing temperature on effective minority carrier lifetime were investigated. Capacitance-voltage and conductance-voltage measurements were used to investigate the interface defect density of state (D it) of Al2O3/Si. Finally, Al diffusion P(+) emitter on n-type silicon was passivated by PEALD Al2O3 films. The conclusion is that the condition of lower substrate temperature accelerates the growth of films and that the condition of lower plasma power controls the films' uniformity. The annealing temperature is higher for samples prepared at lower substrate temperature in order to get the better surface passivation effects. Heavier doping concentration of Al increased passivation quality after annealing by the effective minority carrier lifetime up to 100 μs.

  5. Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 °C in air

    Science.gov (United States)

    Suria, Ateeq J.; Yalamarthy, Ananth Saran; Heuser, Thomas A.; Bruefach, Alexandra; Chapin, Caitlin A.; So, Hongyun; Senesky, Debbie G.

    2017-06-01

    In this paper, we describe the use of 50 nm atomic layer deposited (ALD) Al2O3 to suppress the interfacial reaction and inter-diffusion between the gate metal and semiconductor interface, to extend the operation limit up to 600 °C in air. Suppression of diffusion is verified through Auger electron spectroscopy (AES) depth profiling and X-ray diffraction (XRD) and is further supported with electrical characterization. An ALD Al2O3 thin film (10 nm and 50 nm), which functions as a dielectric layer, was inserted between the gate metal (Ni/Au) and heterostructure-based semiconductor material (AlGaN/GaN) to form a metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). This extended the 50 nm ALD Al2O3 MIS-HEMT (50-MIS) current-voltage (Ids-Vds) and gate leakage (Ig,leakage) characteristics up to 600 °C. Both, the 10 nm ALD Al2O3 MIS-HEMT (10-MIS) and HEMT, failed above 350 °C, as evidenced by a sudden increase of approximately 50 times and 5.3 × 106 times in Ig,leakage, respectively. AES on the HEMT revealed the formation of a Ni-Au alloy and Ni present in the active region. Additionally, XRD showed existence of metal gallides in the HEMT. The 50-MIS enables the operation of AlGaN/GaN based electronics in oxidizing high-temperature environments, by suppressing interfacial reaction and inter-diffusion of the gate metal with the semiconductor.

  6. Epitaxial Al2O3 capacitors for low microwave loss superconducting quantum circuits

    Directory of Open Access Journals (Sweden)

    K.-H. Cho

    2013-10-01

    Full Text Available We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001 Al2O3 substrates. The superconductor-insulator-superconductor trilayers were grown in situ in a hybrid deposition system: the epitaxial Re base and polycrystalline Al counterelectrode layers were grown by sputtering, while the epitaxial Al2O3 layer was grown by pulsed laser deposition. Structural analysis indicates a highly crystalline epitaxial Al2O3 layer and sharp interfaces. The measured intrinsic (low-power, low-temperature quality factor of the resonators is as high as 3 × 104. These results indicate that low-loss grown Al2O3 is an attractive candidate dielectric for high-fidelity superconducting qubit circuits.

  7. Spatial atomic layer deposition on flexible porous substrates: ZnO on anodic aluminum oxide films and Al2O3 on Li ion battery electrodes

    International Nuclear Information System (INIS)

    Sharma, Kashish; Routkevitch, Dmitri; Varaksa, Natalia; George, Steven M.

    2016-01-01

    Spatial atomic layer deposition (S-ALD) was examined on flexible porous substrates utilizing a rotating cylinder reactor to perform the S-ALD. S-ALD was first explored on flexible polyethylene terephthalate polymer substrates to obtain S-ALD growth rates on flat surfaces. ZnO ALD with diethylzinc and ozone as the reactants at 50 °C was the model S-ALD system. ZnO S-ALD was then performed on nanoporous flexible anodic aluminum oxide (AAO) films. ZnO S-ALD in porous substrates depends on the pore diameter, pore aspect ratio, and reactant exposure time that define the gas transport. To evaluate these parameters, the Zn coverage profiles in the pores of the AAO films were measured using energy dispersive spectroscopy (EDS). EDS measurements were conducted for different reaction conditions and AAO pore geometries. Substrate speeds and reactant pulse durations were defined by rotating cylinder rates of 10, 100, and 200 revolutions per minute (RPM). AAO pore diameters of 10, 25, 50, and 100 nm were utilized with a pore length of 25 μm. Uniform Zn coverage profiles were obtained at 10 RPM and pore diameters of 100 nm. The Zn coverage was less uniform at higher RPM values and smaller pore diameters. These results indicate that S-ALD into porous substrates is feasible under certain reaction conditions. S-ALD was then performed on porous Li ion battery electrodes to test S-ALD on a technologically important porous substrate. Li 0.20 Mn 0.54 Ni 0.13 Co 0.13 O 2 electrodes on flexible metal foil were coated with Al 2 O 3 using 2–5 Al 2 O 3 ALD cycles. The Al 2 O 3 ALD was performed in the S-ALD reactor at a rotating cylinder rate of 10 RPM using trimethylaluminum and ozone as the reactants at 50 °C. The capacity of the electrodes was then tested versus number of charge–discharge cycles. These measurements revealed that the Al 2 O 3 S-ALD coating on the electrodes enhanced the capacity stability. This S-ALD process could be extended to roll-to-roll operation for

  8. Stable, Microfabricated Thin Layer Chromatography Plates without Volume Distortion on Patterned, Carbon and Al2O3-Primed Carbon Nanotube Forests

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, David S.; Kanyal, Supriya S.; Gupta, Vipul; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Vanfleet, Richard; Davis, Robert C.; Linford, Matthew R.

    2012-09-28

    In a recent report (Song, J.; et al., Advanced Functional Materials 2011, 21, 1132-1139) some of us described the fabrication of thin layer chromatography (TLC) plates from patterned carbon nanotube (CNT) forests, which were directly infiltrated/coated with silicon by low pressure chemical vapor deposition (LPCVD) of silicon using SiH4. Following infiltration, the nanotubes were removed from the assemblies and the silicon simultaneously converted to SiO2 in a high temperature oxidation step. However, while straightforward, this process had some shortcomings, not the least of which was some distortion of the lithographically patterned features during the volume expansion that accompanied oxidation. Herein we overcome theis issue and also take substantial steps forward in the microfabrication of TLC plates by showing: (i) A new method for creating an adhesion promotion layer on CNT forests by depositing a few nanometers of carbon followed by atomic layer deposition (ALD) of Al2O3. This method for appears to be new, and X-ray photoelectron spectroscopy confirms the expected presence of oxygen after carbon deposition. ALD of Al2O3 alone and in combination with the carbon on patterned CNT forests was also explored as an adhesion promotion layer for CNT forest infiltration. (ii) Rapid, conformal deposition of an inorganic material that does not require subsequent oxidation: fast pseudo-ALD growth of SiO2 via alumina catalyzed deposition of tris(tert-butoxy)silanol onto the carbon/Al2O3-primed CNT forests. (iii) Faithful reproduction of the features in the masks used to microfabricate the TLC plates (M-TLC) this advance springs from the previous two points. (iv) A bonded (amino) phase on a CNT-templated microfabricated TLC plate. (v) Fast, highly efficient (125,000 - 225,000 N/m) separations of fluorescent dyes on M-TLC plates. (vi) Extensive characterization of our new materials by TEM, SEM, EDAX, DRIFT, and XPS. (vii) A substantially lower process temperature for the

  9. High resolution electron microscopy studies of interfaces between Al2O3 substrates and MBE grown Nb films

    International Nuclear Information System (INIS)

    Mayer, J.; Ruhle, M.; Dura, J.; Flynn, C.P.

    1991-01-01

    This paper reports on single crystal niobium films grown by Molecular Beam Epitaxy (MBE) on (001) S sapphire substrates. Cross-sectional specimens with thickness of 2 O 3 interface could be investigated by high resolution electron microscopy (HREM). The orientation relationship between the metal film and the ceramic substrate was verified by selected area diffraction: (111) Nb parallel (0001) S and [1 bar 10] Nb parallel [2 bar 1 bar 10] S . The atomistic structure of the interface was identified by HREM

  10. Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Samha, Hussein; Linford, Matthew R.

    2013-09-25

    We report the XPS characterization of a thin film of Al2O3 (35 nm) deposited via e-beam evaporation onto silicon (100). The film was characterized with monochromatic Al Ka radiation. An XPS survey scan, an Al 2p narrow scan, and the valence band spectrum were collected. The Al2O3 thin film is used as a diffusion barrier layer for templated carbon nanotube (CNT) growth in the preparation of microfabricated thin layer chromatography plates.

  11. Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

    International Nuclear Information System (INIS)

    Wu, Bin; Zhang, Yuantao; Shi, Zhifeng; Li, Xiang; Cui, Xijun; Zhuang, Shiwei; Zhang, Baolin; Du, Guotong

    2014-01-01

    Epitaxial ZnO structures with inherent two layers of nanorods layer on film layer were fabricated on c-Al 2 O 3 by metal-organic chemical vapor deposition (MOCVD) and studied by photoluminescence. Specially, photoluminescence spectra for the film layer were obtained by rendering the excitation from the substrate side. Different defect levels configurations between nanorods and film were revealed. Zinc vacancies tend to form in top nanorods layer, whereas abundant zinc–oxygen divacancies accumulate in bottom film layer. An acceptor state with activation energy of ∼200 meV is exclusive to the film layer. The stacking fault related acceptor and Al introduced donor are present in both layers. Besides, two other defect related donors contained in the nanorods layer perhaps also exist within the film layer. - Highlights: • Inherent double layer ZnO of nanorods on film layer were studied by PL. • V Zn tend to form in the nanorods layer, and V ZnO accumulate in the film layer. • An acceptor with activation energy of ∼200 meV is exclusive to the film layer. • Pure NBE emission without DLE in RT PL spectrum does not mean good crystallinity

  12. Effect of interface structure regulation caused by variation of imidization rate on conduction current characteristics of PI/nano-Al2O3 three-layer composite films

    Science.gov (United States)

    Ma, Xinyu; Liu, Lizhu; Zhang, Xiaorui; He, Hongju

    2018-06-01

    A series of sandwich structure PI films were prepared by different imidization process, with pure PI film as the interlayer and PI/Al2O3 composite films as outer layers. The imidization rate of the film with different cured processes was calculated by characterizing by infrared spectrum (FT-IR), and the morphology of interlayer interface with different imidization rates by scanning electron microscope (SEM). When the imidization conditions of the first and second films were 260 °C/120 min, the composite films displayed better interface structure and higher imidization rate (ID) than others. Moreover, results also showed that the conduction current of three-layer composite film steadily improved with increased ID and temperature, and was higher than that of the pure film. At the temperature of 30 °C, the electrical aging threshold at different ID was obtained. When the ID reached the maximum value of 78.9%, the electrical aging threshold reached the maximum 41.69 kV/mm.

  13. Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition

    International Nuclear Information System (INIS)

    Jung, Hyunsoo; Choi, Hagyoung; Lee, Sanghun; Jeon, Heeyoung; Jeon, Hyeongtag

    2013-01-01

    In the present study, we investigated the gas and moisture permeation barrier properties of Al 2 O 3 films deposited on polyethersulfone films (PES) by capacitively coupled plasma (CCP) type Remote Plasma Atomic Layer Deposition (RPALD) at Radio Frequency (RF) plasma powers ranging from 100 W to 400 W in 100 W increments using Trimethylaluminum [TMA, Al(CH 3 ) 3 ] as the Al source and O 2 plasma as the reactant. To study the gas and moisture permeation barrier properties of 100-nm-thick Al 2 O 3 at various plasma powers, the Water Vapor Transmission Rate (WVTR) was measured using an electrical Ca degradation test. WVTR decreased as plasma power increased with WVTR values for 400 W and 100 W of 2.6 × 10 −4 gm −2 day −1 and 1.2 × 10 −3 gm −2 day −1 , respectively. The trends for life time, Al-O and O-H bond, density, and stoichiometry were similar to that of WVTR with improvement associated with increasing plasma power. Further, among plasma power ranging from 100 W to 400 W, the highest power of 400 W resulted in the best moisture permeation barrier properties. This result was attributed to differences in volume and amount of ion and radical fluxes, to join the ALD process, generated by O 2 plasma as the plasma power changed during ALD process, which was determined using a plasma diagnosis technique called the Floating Harmonic Method (FHM). Plasma diagnosis by FHM revealed an increase in ion flux with increasing plasma power. With respect to the ALD process, our results indicated that higher plasma power generated increased ion and radical flux compared with lower plasma power. Thus, a higher plasma power provides the best gas and moisture permeation barrier properties

  14. Evolution of the Al2O3/Ge(1 0 0) interface for reactively sputter-deposited films submitted to postdeposition anneals

    Science.gov (United States)

    Bom, Nicolau Molina; Soares, Gabriel Vieira; Krug, Cristiano; Pezzi, Rafael Peretti; Baumvol, Israel Jacob Rabin; Radtke, Claudio

    2012-05-01

    Al2O3 was deposited by pulsed DC reactive sputter on Ge(1 0 0) aiming at producing layers with reduced OH and H2O content in comparison with water-based atomic layer deposition. In this way, the intrinsic interaction of Al2O3 with Ge could be probed. Photoelectron spectroscopy showed evidence of a GeO2 interlayer in as-deposited samples. Thermal annealing in Ar or forming gas for 30 min at 350 °C reduced the amount of oxidized Ge, i.e. significant activity took place at the Al2O3/Ge interface irrespective of annealing ambient. The remaining transition layer consisted essentially of aluminum germanates. Analysis of Si companion samples indicates that in the absence of an oxidizing agent, Al2O3/Ge is more stable than Al2O3/Si.

  15. Synthesis and characterization of Al2O3 and SiO2 films with fluoropolymer content using rf-plasma magnetron sputtering technique

    International Nuclear Information System (INIS)

    Islam, Mohammad; Inal, Osman T.

    2008-01-01

    Pure and molecularly mixed inorganic films for protection against atomic oxygen in lower earth orbit were prepared using radio-frequency (rf) plasma magnetron sputtering technique. Alumina (Al 2 O 3 ) and silica (SiO 2 ) films with average grain size in the range of 30-80 nm and fully dense or dense columnar structure were synthesized under different conditions of pressure and power. Simultaneous oxide sputtering and plasma polymerization (PP) of hexafluoropropylene (HFP) led to the formation of molecularly mixed films with fluoropolymer content. The degree of plasma polymerization was strongly influenced by total chamber pressure and the argon to HFP molar ratio (n Ar /n M ). An order of magnitude increase in pressure due to argon during codeposition changed the plasma-polymerization mechanism from radical-chain- to radical-radical-type processes. Subsequently, a shift from linear CH 2 group based chain polymerization to highly disordered fluoropolymer content with branching and cross-linking was observed. Fourier transform infrared spectroscopy studies revealed chemical interaction between depositing SiO 2 and PP-HFP through appearance of absorption bands characteristic of Si-F stretching and expansion of SiO 2 network. The relative amount and composition of plasma-polymerized fluoropolymer in such films can be controlled by changing argon to HFP flow ratio, total chamber pressure, and applied power. These films offer great potential for use as protective coatings in aerospace applications

  16. Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Zubizarreta, C; Berasategui, E G; Bayón, R; Barriga, J; Escobar Galindo, R; Barros, R; Gaspar, D; Nunes, D; Calmeiro, T; Martins, R; Fortunato, E

    2014-01-01

    The main requirements for transparent conducting oxide (TCO) films acting as electrodes are a high transmission rate in the visible spectral region and low resistivity. However, in many cases, tolerance to temperature and humidity exposure is also an important requirement to be fulfilled by the TCOs to assure proper operation and durability. Besides improving current encapsulation methods, the corrosion resistance of the developed TCOs must also be enhanced to warrant the performance of optoelectronic devices. In this paper the performance of aluminum-doped zinc oxide (AZO) films deposited by pulsed dc magnetron sputtering has been studied. Structure, optical transmittance/reflectance, electrical properties (resistivity, carrier concentration and mobility) and corrosion resistance of the developed coatings have been analyzed as a function of the doping of the target and the coating thickness. Films grown from a 2.0 wt% Al 2 O 3 target with a thickness of approximately 1 µm showed a very low resistivity of 6.54  ×  10 –4  Ωcm and a high optical transmittance in the visible range of 84%. Corrosion studies of the developed samples have shown very low corrosion currents (nanoamperes), very high corrosion resistances (in the order of 10 7  Ω) and very high electrochemical stability, indicating no tendency for electrochemical corrosion degradation. (paper)

  17. Evaluation of the optoelectronic properties and corrosion behavior of Al2O3-doped ZnO films prepared by dc pulsed magnetron sputtering

    Science.gov (United States)

    Zubizarreta, C.; Berasategui, E. G.; Bayón, R.; Escobar Galindo, R.; Barros, R.; Gaspar, D.; Nunes, D.; Calmeiro, T.; Martins, R.; Fortunato, E.; Barriga, J.

    2014-12-01

    The main requirements for transparent conducting oxide (TCO) films acting as electrodes are a high transmission rate in the visible spectral region and low resistivity. However, in many cases, tolerance to temperature and humidity exposure is also an important requirement to be fulfilled by the TCOs to assure proper operation and durability. Besides improving current encapsulation methods, the corrosion resistance of the developed TCOs must also be enhanced to warrant the performance of optoelectronic devices. In this paper the performance of aluminum-doped zinc oxide (AZO) films deposited by pulsed dc magnetron sputtering has been studied. Structure, optical transmittance/reflectance, electrical properties (resistivity, carrier concentration and mobility) and corrosion resistance of the developed coatings have been analyzed as a function of the doping of the target and the coating thickness. Films grown from a 2.0 wt% Al2O3 target with a thickness of approximately 1 µm showed a very low resistivity of 6.54  ×  10-4 Ωcm and a high optical transmittance in the visible range of 84%. Corrosion studies of the developed samples have shown very low corrosion currents (nanoamperes), very high corrosion resistances (in the order of 107 Ω) and very high electrochemical stability, indicating no tendency for electrochemical corrosion degradation.

  18. In situ transmission electron microscopy observation of pulverization of aluminum nanowires and evolution of the thin surface Al2O3 layers during lithiation-delithiation cycles.

    Science.gov (United States)

    Liu, Yang; Hudak, Nicholas S; Huber, Dale L; Limmer, Steven J; Sullivan, John P; Huang, Jian Yu

    2011-10-12

    Lithiation-delithiation cycles of individual aluminum nanowires (NWs) with naturally oxidized Al(2)O(3) surface layers (thickness 4-5 nm) were conducted in situ in a transmission electron microscope. Surprisingly, the lithiation was always initiated from the surface Al(2)O(3) layer, forming a stable Li-Al-O glass tube with a thickness of about 6-10 nm wrapping around the NW core. After lithiation of the surface Al(2)O(3) layer, lithiation of the inner Al core took place, which converted the single crystal Al to a polycrystalline LiAl alloy, with a volume expansion of about 100%. The Li-Al-O glass tube survived the 100% volume expansion, by enlarging through elastic and plastic deformation, acting as a solid electrolyte with exceptional mechanical robustness and ion conduction. Voids were formed in the Al NWs during the initial delithiation step and grew continuously with each subsequent delithiation, leading to pulverization of the Al NWs to isolated nanoparticles confined inside the Li-Al-O tube. There was a corresponding loss of capacity with each delithiation step when arrays of NWs were galvonostatically cycled. The results provide important insight into the degradation mechanism of lithium-alloy electrodes and into recent reports about the performance improvement of lithium ion batteries by atomic layer deposition of Al(2)O(3) onto the active materials or electrodes.

  19. Characterization of Al2O3 surface passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Albadri, Abdulrahman M.

    2014-01-01

    A study of the passivation of silicon surface by aluminum oxide (Al 2 O 3 ) is reported. A correlation of fixed oxide charge density (Q f ) and interface trap density (D it ) on passivation efficiency is presented. Low surface recombination velocity (SRV) was obtained even by as-deposited Al 2 O 3 films and this was found to be associated to the passivation of interface states. Fourier transfer infrared spectroscopy spectra show the existence of an interfacial silicon oxide thin layer in both as-deposited and annealed Al 2 O 3 films. Q f is found positive in as-deposited films and changing to negative upon subsequent annealing, providing thus an enhancement of the passivation in p-type silicon wafers, associated to field effects. Secondary ion mass spectrometry analysis confirms the correlation between D it and hydrogen concentration at the Al 2 O 3 /Si interface. A lowest SRV of 15 cm/s was obtained after an anneal at 400 °C in nitrogen atmosphere. - Highlights: • Al 2 O 3 provides superior passivation for silicon surfaces. • Atomic layer deposition-Al 2 O 3 was deposited at a low temperature of 200 °C. • A lowest surface passivation velocity of 15 cm/s was obtained after an anneal at 400 °C in nitrogen. • As-deposited Al 2 O 3 films form very thin SiO 2 layer responsible of low interface trap densities. • High negative fixed charge density of (− 2 × 10 12 cm −2 ) was achieved upon annealing at 400 °C

  20. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

    International Nuclear Information System (INIS)

    Wang Zheli; Zhou Jianjun; Kong Yuechan; Kong Cen; Dong Xun; Yang Yang; Chen Tangsheng

    2015-01-01

    A high-performance enhancement-mode (E-mode) gallium nitride (GaN)-based metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) that employs a 5-nm-thick aluminum gallium nitride (Al 0.3 Ga 0.7 N) as a barrier layer and relies on silicon nitride (SiN) passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide (Al 2 O 3 ) by atomic layer deposition (ALD) on AlGaN surface would not increase the 2DEG density in the heterointerface. ALD Al 2 O 3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length (L G ) of 1 μm showed a maximum drain current density (I DS ) of 657 mA/mm, a maximum extrinsic transconductance (g m ) of 187 mS/mm and a threshold voltage (V th ) of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of Al 2 O 3 gate insulator. This provided an excellent way to realize E-mode AlGaN/GaN MIS-HEMTs with both high V th and I DS . (paper)

  1. High-performance flexible resistive memory devices based on Al2O3:GeOx composite

    Science.gov (United States)

    Behera, Bhagaban; Maity, Sarmistha; Katiyar, Ajit K.; Das, Samaresh

    2018-05-01

    In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co-sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio (∼104) and endurance (>500 cycles). GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next-generation electronics device.

  2. Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

    NARCIS (Netherlands)

    Hoogeland, D.; Jinesh, K.B.; Roozeboom, F.; Besling, W.F.A.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2009-01-01

    By employing plasma-assisted atomic layer deposition, thin films of Al2O3 and TiN are subsequently deposited in a single reactor at a single substrate temperature with the objective of fabricating high-quality TiN/Al2O3 / p-Si metal-oxide-semiconductor capacitors. Transmission electron microscopy

  3. Experiment and prediction on thermal conductivity of Al2O3/ZnO ...

    Indian Academy of Sciences (India)

    Administrator

    Experiment and prediction on thermal conductivity of Al2O3/ZnO nano thin film interface structure. PING YANG*, LIQIANG ZHANG, HAIYING YANG†, DONGJING LIU and XIALONG LI. Laboratory of Advanced Manufacturing and Reliability for MEMS/NEMS/OEDS,. School of Mechanical Engineering, Jiangsu University, ...

  4. Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

    Science.gov (United States)

    Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

    2018-04-01

    Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

  5. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    Science.gov (United States)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  6. Rare-earth-ion-doped Al2O3 waveguides for active integrated optical devices

    NARCIS (Netherlands)

    Bradley, J.; Ay, F.; Blauwendraat, Tom; Worhoff, Kerstin; Pollnau, Markus; Orlovic, Valentin A.; Panchenko, Vladislav; Scherbakov, Ivan A.

    2007-01-01

    Reactively co-sputtered amorphous $Al_2O_3$ waveguide layers with low propagation losses have been deposited. In order to define channel waveguides in such $Al_2O_3$ films, the etching behaviour of $Al_2O_3$ has been investigated using an inductively coupled reactive ion etch system. The etch rate

  7. Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

    International Nuclear Information System (INIS)

    Lee, Jaesang; Kim, Hyungchul; Park, Taeyong; Ko, Youngbin; Ryu, Jaehun; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag

    2012-01-01

    Remote plasma atomic layer deposited (RPALD) Al 2 O 3 films were investigated to apply as tunnel and blocking layers in the metal-oxide-semiconductor capacitor memory utilizing Au nanocrystals (NCs) for nonvolatile memory applications. The interface stability of an Al 2 O 3 film deposited by RPALD was studied to observe the effects of remote plasma on the interface. The interface formed during RPALD process has high oxidation states such as Si +3 and Si +4 , indicating that RPALD process can grow more stable interface which has a small amount of fixed oxide trap charge. The significant memory characteristics were also observed in this memory device through the electrical measurement. The memory device exhibited a relatively large memory window of 5.6 V under a 10/-10 V program/erase voltage and also showed the relatively fast programming/erasing speed and a competitive retention characteristic after 10 4 s. These results indicate that Al 2 O 3 films deposited via RPALD can be applied as the tunnel and blocking oxides for next-generation flash memory devices.

  8. Investigating the electronic properties of Al2O3/Cu(In,GaSe2 interface

    Directory of Open Access Journals (Sweden)

    R. Kotipalli

    2015-10-01

    Full Text Available Atomic layer deposited (ALD Al2O3 films on Cu(In,GaSe2 (CIGS surfaces have been demonstrated to exhibit excellent surface passivation properties, which is advantageous in reducing recombination losses at the rear metal contact of CIGS thin-film solar cells. Here, we report, for the first time, experimentally extracted electronic parameters, i.e. fixed charge density (Qf and interface-trap charge density (Dit, for as-deposited (AD and post-deposition annealed (PDA ALD Al2O3 films on CIGS surfaces using capacitance–voltage (C-V and conductance-frequency (G-f measurements. These results indicate that the AD films exhibit positive fixed charges Qf (approximately 1012 cm−2, whereas the PDA films exhibit a very high density of negative fixed charges Qf (approximately 1013 cm−2. The extracted Dit values, which reflect the extent of chemical passivation, were found to be in a similar range of order (approximately 1012 cm−2 eV−1 for both AD and PDA samples. The high density of negative Qf in the bulk of the PDA Al2O3 film exerts a strong Coulomb repulsive force on the underlying CIGS minority carriers (ns, preventing them to recombine at the CIGS/Al2O3 interface. Using experimentally extracted Qf and Dit values, SCAPS simulation results showed that the surface concentration of minority carriers (ns in the PDA films was approximately eight-orders of magnitude lower than in the AD films. The electrical characterization and estimations presented in this letter construct a comprehensive picture of the interfacial physics involved at the Al2O3/CIGS interface.

  9. Wear Behavior of Cold Pressed and Sintered Al2O3/TiC/CaF2Al2O3/TiC Laminated Ceramic Composite

    Institute of Scientific and Technical Information of China (English)

    Xuefeng YANG; Jian CHENG; Peilong SONG; Shouren WANG; Liying YANG; Yanjun WANG; Ken MAO

    2013-01-01

    A novel laminated Al2O3/TiC/CaF2-Al2O3/TiC sandwich ceramic composite was fabricated through cold pressing and sintering to achieve better anti-wear performance,such as low friction coefficient and low wear rate.Al2O3/TiC/CaF2 and Al2O3/TiC composites were alternatively built layer-by-layer to obtain a sandwich structure.Solid lubricant CaF2 was added evenly into the Al2O3/TiC/CaF2 layer to reduce the friction and wear.Al2O3/TiC ceramic was also cold pressed and sintered for comparison.Friction analysis of the two ceramics was then conducted via a wear-and-tear machine.Worn surface and surface compositions were examined by scanning electron microscopy and energy dispersion spectrum,respectively.Results showed that the laminated Al2O3/TiC/CaF2-Al2O3/TiC sandwich ceramic composite has lower friction coefficient and lower wear rate than those of Al2O3/TiC ceramic alone because of the addition of CaF2 into the laminated Al2O3/TiC/CaF2-Al2O3/TiC sandwich ceramic composite.Under the friction load,the tiny CaF2 particles were scraped from the Al2O3/TiC/CaF2 layer and spread on friction pairs before falling off into micropits.This process formed a smooth,self-lubricating film,which led to better anti-wear properties.Adhesive wear is the main wear mechanism of Al2O3/TiC/CaF2 layer and abrasive wear is the main wear mechanism of Al2O3/TiC layer.

  10. TEM and AFM study of WO3 nanosize growth on α-Al2O3

    International Nuclear Information System (INIS)

    Al-Mohammad, A.

    2007-07-01

    WO 3 thin films have been deposited by thermal evaporation on (0001) and (1012 ) planes of alumina oxide single crystal and annealed either in Oxygen or in air atmosphere. The morphology and crystallographic structure of films (as-deposited and annealed films) have been characterized by Atomic Force Microscope (AFM), transmission electron microscope (TEM), and transmission electron diffraction (TED). During annealing, the films undergo important morphological and structural changes. The annealed films exhibit large grains. These grains have the monoclinic structure in epitaxial orientations. The grains are made of twinned microdomains elongated in the [100] direction resulting of a preferential growth. The microdomains are along the three different directions on the (0001) α-Al 2 O 3 surface and only one direction on the (1012 ) α-Al 2 O 3 one.(author)

  11. Radiation endurance in Al2O3 nanoceramics

    Science.gov (United States)

    García Ferré, F.; Mairov, A.; Ceseracciu, L.; Serruys, Y.; Trocellier, P.; Baumier, C.; Kaïtasov, O.; Brescia, R.; Gastaldi, D.; Vena, P.; Beghi, M. G.; Beck, L.; Sridharan, K.; di Fonzo, F.

    2016-09-01

    The lack of suitable materials solutions stands as a major challenge for the development of advanced nuclear systems. Most issues are related to the simultaneous action of high temperatures, corrosive environments and radiation damage. Oxide nanoceramics are a promising class of materials which may benefit from the radiation tolerance of nanomaterials and the chemical compatibility of ceramics with many highly corrosive environments. Here, using thin films as a model system, we provide new insights into the radiation tolerance of oxide nanoceramics exposed to increasing damage levels at 600 °C -namely 20, 40 and 150 displacements per atom. Specifically, we investigate the evolution of the structural features, the mechanical properties, and the response to impact loading of Al2O3 thin films. Initially, the thin films contain a homogeneous dispersion of nanocrystals in an amorphous matrix. Irradiation induces crystallization of the amorphous phase, followed by grain growth. Crystallization brings along an enhancement of hardness, while grain growth induces softening according to the Hall-Petch effect. During grain growth, the excess mechanical energy is dissipated by twinning. The main energy dissipation mechanisms available upon impact loading are lattice plasticity and localized amorphization. These mechanisms are available in the irradiated material, but not in the as-deposited films.

  12. Effect of Y2O3-Al2O3 ratio on inter-granular phases and films in tape-casting α-SiC with high toughness

    International Nuclear Information System (INIS)

    Huang Rong; Gu Hui; Zhang Jingxian; Jiang Dongliang

    2005-01-01

    Silicon carbide (SiC) ceramics prepared from liquid phase sintering after aqueous-tape-casting can yield high toughness when appropriate amount of Y 2 O 3 -Al 2 O 3 are added, even though no elongated grains are present. Grain boundaries (GB), second-phases and hetero-phase boundaries (HB) in 2 samples with additive mole ratios of 3:5 and 3:7 are investigated using high-resolution and analytical electron microscopy (HREM and AEM). The meta-stable YAlO 3 (YAP) was nucleated from SiC surfaces in the sample with Y/Al = 3:5 as revealed by crystallographic relations across the HB, whilst relatively thick amorphous films were found at GB. In contrary, the higher level of Al 2 O 3 additives decreases the GB film thickness in the sample with Y/Al = 3:7, and the homogeneous nucleation of Y 3 Al 5 O 12 (YAG) occurs at triple pockets accompanying with thick HB films. The strong variation of GB widths is a result of GB wetting in the sample with Y/Al = 3:5 and HB wetting in the sample of Y/Al = 3:7, both by liquid Al 2 O 3 . The energy of GB in the former sample is higher than the energy of HB as exhibited by the preferential nucleation of meta-stable YAP on SiC surfaces, which results in wetting of GB by the liquid; the situation is opposite in the latter sample as the wetting of HB occurs, leading to de-wetting of GB. The thermal mismatch between SiC and YAP or YAG as well as the presence of amorphous films facilitate the creation of micro-crack to promote inter-granular fracture and result in high toughness in both SiC ceramics

  13. Determination of the band gap of TiO2-Al2O3 films as a function of processing parameters

    International Nuclear Information System (INIS)

    Barajas-Ledesma, E.; Garcia-Benjume, M.L.; Espitia-Cabrera, I.; Ortiz-Gutierrez, M.; Espinoza-Beltran, F.J.; Mostaghimi, J.; Contreras-Garcia, M.E.

    2010-01-01

    In this work the study of band gap is based on the processing parameters and was calculated using the Indirect Transition Model. An experimental design was done, in order to have a sequence of 18 samples to analyze. The alumina doped titania thin films were prepared by combining electrophoretic deposition (EPD) with sputtering. The addition of alumina to the titania was with the purpose to reduce the band gap of the semiconductor. Several researches have tried to dope titania with other materials, because it has photocatalytic activity only in the UV spectrum. Then, reducing the band gap of the titania, it will have activity in the entire visible spectrum, and its applications increase considerably. Comparing with the adsorption line in the ultraviolet region for all the samples, the results show the adsorption edge for samples doped with fewer amounts of alumina shifts a little toward a lower energy region, leading to a band gap reduction.

  14. Characterization of 12CaO x 7Al2O3 doped indium tin oxide films for transparent cathode in top-emission organic light-emitting diodes.

    Science.gov (United States)

    Jung, Chul Ho; Hwang, In Rok; Park, Bae Ho; Yoon, Dae Ho

    2013-11-01

    12CaO x 7Al2O3, insulator (C12A7) doped indium tin oxide (ITO) (ITO:C12A7) films were fabricated using a radio frequency magnetron co-sputtering system with ITO and C12A7 targets. The qualitative and quantitative properties of ITO:C12A7 films, as a function of C12A7 concentration, were examined via X-ray photoemission spectroscopy and synchrotron X-ray scattering as well as by conducting atomic force microscopy. The work function of ITO:C12A7 (1.3%) films of approximately 2.8 eV obtained by high resolution photoemission spectroscopy measurements make them a reasonable cathode for top-emission organic light-emitting diodes.

  15. Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates.

    Science.gov (United States)

    Kang, Hang-Kyu; Kang, Yu-Seon; Kim, Dae-Kyoung; Baik, Min; Song, Jin-Dong; An, Youngseo; Kim, Hyoungsub; Cho, Mann-Ho

    2017-05-24

    The passivation effect of an Al 2 O 3 layer on the electrical properties was investigated in HfO 2 -Al 2 O 3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray photoelectron spectroscopy showed that interfacial reactions were dependent on the presence of the Al 2 O 3 passivation layer and its sequence in the HfO 2 -Al 2 O 3 laminate structures. Because of the interfacial reaction, the Al 2 O 3 /HfO 2 /Al 2 O 3 structure showed the best electrical characteristics. The top Al 2 O 3 layer suppressed the interdiffusion of oxidizing species into the HfO 2 films, whereas the bottom Al 2 O 3 layer blocked the outdiffusion of In and P atoms. As a result, the formation of In-O bonds was more effectively suppressed in the Al 2 O 3 /HfO 2 /Al 2 O 3 /InP structure than that in the HfO 2 -on-InP system. Moreover, conductance data revealed that the Al 2 O 3 layer on InP reduces the midgap traps to 2.6 × 10 12 eV -1 cm -2 (compared to that of HfO 2 /InP, that is, 5.4 × 10 12 eV -1 cm -2 ). The suppression of gap states caused by the outdiffusion of In atoms significantly controls the degradation of capacitors caused by leakage current through the stacked oxide layers.

  16. Model Research On Synthesis Of Al2O3-C Layers By MOCVD

    Directory of Open Access Journals (Sweden)

    Sawka A.

    2015-06-01

    Full Text Available These are model studies whose aim is to obtain information that would allow development of new technology for synthesizing monolayers of Al2O3-C with adjusted microstructure on cemented carbides. The Al2O3-C layer will constitute an intermediate layer on which the outer layer of Al2O3 without carbon is synthesized. The purpose of the intermediate layer is to block the cobalt diffusion to the synthesized outer layer of Al2O3 and to stop the diffusion of air oxygen to the substrate during the synthesis of the outer layer. This layer should be thin, continuous, dense and uniform in thickness.

  17. Insight into the effect of screw dislocations and oxygen vacancy defects on the optical nonlinear refraction response in chemically grown ZnO/Al2O3 films

    Science.gov (United States)

    Agrawal, Arpana; Saroj, Rajendra K.; Dar, Tanveer A.; Baraskar, Priyanka; Sen, Pratima; Dhar, Subhabrata

    2017-11-01

    We report the effect of screw dislocations and oxygen vacancy defects on the optical nonlinear refraction response of ZnO films grown on a sapphire substrate at various oxygen flow rates using the chemical vapor deposition technique. The nonlinear refraction response was investigated in the off-resonant regime using a CW He-Ne laser source to examine the role of the intermediate bandgap states. It has been observed that the structural defects strongly influence the optical nonlinearity in the off-resonant regime. Nonlinearity has been found to improve as the oxygen flow rate is lowered from 2 sccm to 0.3 sccm. From photoluminescence studies, we observe that the enhanced defect density of the electronic defect levels due to the increased concentration of structural defects (with the decrease in the oxygen flow rate) is responsible for this improved optical nonlinearity along with the thermal effect. This suggests that defect engineering is an effective way to tailor the nonlinearity of ZnO films and their utility for optoelectronic device applications.

  18. Interface sulfur passivation using H2S annealing for atomic-layer-deposited Al2O3 films on an ultrathin-body In0.53Ga0.47As-on-insulator

    International Nuclear Information System (INIS)

    Jin, Hyun Soo; Cho, Young Jin; Lee, Sang-Moon; Kim, Dae Hyun; Kim, Dae Woong; Lee, Dongsoo; Park, Jong-Bong; Won, Jeong Yeon; Lee, Myoung-Jae; Cho, Seong-Ho; Hwang, Cheol Seong; Park, Tae Joo

    2014-01-01

    Highlights: • ALD Al 2 O 3 films were grown on ultrathin-body In 0.53 Ga 0.47 As substrates for III-V compound-semiconductor-based devices. • Interface sulfur passivation was performed with wet processing using (NH 4 ) 2 S solution, and dry processing using post-deposition annealing under a H 2 S atmosphere. • Electrical properties of the device were better for (NH 4 ) 2 S wet-treatment than the PDA under a H 2 S atmosphere. • PDA under a H 2 S atmosphere following (NH 4 ) 2 S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices. - Abstract: Atomic-layer-deposited Al 2 O 3 films were grown on ultrathin-body In 0.53 Ga 0.47 As substrates for III-V compound-semiconductor-based devices. Interface sulfur (S) passivation was performed with wet processing using ammonium sulfide ((NH 4 ) 2 S) solution, and dry processing using post-deposition annealing (PDA) under a H 2 S atmosphere. The PDA under the H 2 S atmosphere resulted in a lower S concentration at the interface and a thicker interfacial layer than the case with (NH 4 ) 2 S wet-treatment. The electrical properties of the device, including the interface property estimated through frequency dispersion in capacitance, were better for (NH 4 ) 2 S wet-treatment than the PDA under a H 2 S atmosphere. They might be improved, however, by optimizing the process conditions of PDA. The PDA under a H 2 S atmosphere following (NH 4 ) 2 S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices

  19. Frictional properties of CeO$_{2}$-Al$_{2}$O$_{3}$-ZrO$_{2}$ plasma-sprayed film under mixed and boundary lubricating conditions

    CERN Document Server

    Kita, H; Osumi, K; 10.2109/jcersj.112.615

    2004-01-01

    In order to find a counterpart for reducing the frictional coefficient of Al/sub 2/O/sub 3/-ZrO/sub 2/-CeO/sub 2/ plasma-sprayed film, the sliding properties in mixed and boundary lubricating conditions was investigated. It was found that combination of a CrN- coated cast iron pin and an Al/sub 2/O/sub 3/-ZrO/sub 2/-CeO/sub 2/ plasma sprayed plate provided the lowest frictional coefficient among several combinations chosen from practical materials. The coefficient of friction was much lower than that of the materials combination widely used for piston ring and cylinder liner. It was inferred that the combination of a pin made of hard materials with high density, a smooth surface such as CrN-coated cast iron and a porous plate can reduce the frictional coefficient because less sliding resistance is implemented and porosity retains oil.

  20. Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Carcia, P. F.; McLean, R. S.; Groner, M. D.; Dameron, A. A.; George, S. M.

    2009-01-01

    Thin films grown by Al 2 O 3 atomic layer deposition (ALD) and SiN plasma-enhanced chemical vapor deposition (PECVD) have been tested as gas diffusion barriers either individually or as bilayers on polymer substrates. Single films of Al 2 O 3 ALD with thicknesses of ≥10 nm had a water vapor transmission rate (WVTR) of ≤5x10 -5 g/m 2 day at 38 deg. C/85% relative humidity (RH), as measured by the Ca test. This WVTR value was limited by H 2 O permeability through the epoxy seal, as determined by the Ca test for the glass lid control. In comparison, SiN PECVD films with a thickness of 100 nm had a WVTR of ∼7x10 -3 g/m 2 day at 38 deg. C/85% RH. Significant improvements resulted when the SiN PECVD film was coated with an Al 2 O 3 ALD film. An Al 2 O 3 ALD film with a thickness of only 5 nm on a SiN PECVD film with a thickness of 100 nm reduced the WVTR from ∼7x10 -3 to ≤5x10 -5 g/m 2 day at 38 deg. C/85% RH. The reduction in the permeability for Al 2 O 3 ALD on the SiN PECVD films was attributed to either Al 2 O 3 ALD sealing defects in the SiN PECVD film or improved nucleation of Al 2 O 3 ALD on SiN.

  1. CVD coating of alumina film of CW-[Beta]t-Co cemented carbide by using hydrogen sulphide contained atmosphere. Ryuka suiso wo fukumu CVD fun'iki wo mochiite no WC-[Beta]t-Co choko gokinjo eno Al2O3 hifuku

    Energy Technology Data Exchange (ETDEWEB)

    Ueki, M.; Kodama, H. (Toshiba Tungaloy Co. Ltd., Kawasaki (Japan)); Suzuki, H. (Chiba Institute of Technology, Chiba (Japan). Faculty of Engineering)

    1994-06-15

    For the purpose of forming Al2O3, a hard material, of uniform thickness on an ultrahard alloy as base material, addition of H2S gas to the reaction gas was investigated. WC-9 mass% [beta]t-7 mass%Co ([beta]t is a solid solution of 22%Ti, 33%TaC and 45%WC) as base body was covered with TiC, TiN, and Al2O3 successively. At the time of CVD coating of Al2O3, H2S of 0-0.84 vol% was added to the reaction gas (H2 gas containing 2.3%AlCl3 and 2.8%CO2). As the results, the following information was obtained: Thickness (A) of Al2O3 in the edge section and that (B) in the fiat section respectively increase with the addition of H2S of up to 0.3% while A/B decreases in this range of H2S concentration and levels off above 0.3%. And the growth rate of Al2O3 increases with addition of H2S. This fact may be attributed to the reason that H2S is a catalyst of forming H2O in the reaction gas. A possible reason of decrease of A/B is that the S content in Al2O3 is larger in the edge section than in the flat section. The addition of H2S transforms the Al2O3 film to coarse columnar crystals and tends to lower the strength of the film and weaken its contact to the ground. 5 refs., 5 figs.

  2. Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures.

    Science.gov (United States)

    Chen, Ying; Emanetoglu, Nuri William; Saraf, Gaurav; Wu, Pan; Lu, Yicheng; Parekh, Aniruddh; Merai, Vinod; Udovich, Eric; Lu, Dong; Lee, Dong S; Armour, Eric A; Pophristic, Milan

    2005-07-01

    Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.

  3. Analysis of Al2O3 Nanostructure Using Scanning Microscopy

    Directory of Open Access Journals (Sweden)

    Marek Kubica

    2018-01-01

    Full Text Available It has been reported that the size and shape of the pores depend on the structure of the base metal, the type of electrolyte, and the conditions of the anodizing process. The paper presents thin Al2O3 oxide layer formed under hard anodizing conditions on a plate made of EN AW-5251 aluminum alloy. The oxidation of the ceramic layer was carried out for 40–80 minutes in a three-component SAS electrolyte (aqueous solution of acids: sulphuric 33 ml/l, adipic 67 g/l, and oxalic 30 g/l at a temperature of 293–313 K, and the current density was 200–400 A/m2. Presented images were taken by a scanning microscope. A computer analysis of the binary images of layers showed different shapes of pores. The structure of ceramic Al2O3 layers is one of the main factors determining mechanical properties. The resistance to wear of specimen-oxide coating layer depends on porosity, morphology, and roughness of the ceramic layer surface. A 3D oxide coating model, based on the computer analysis of images from a scanning electron microscope (Philips XL 30 ESEM/EDAX, was proposed.

  4. Analysis of Al2O3 Nanostructure Using Scanning Microscopy

    Science.gov (United States)

    Kubica, Marek; Bara, Marek

    2018-01-01

    It has been reported that the size and shape of the pores depend on the structure of the base metal, the type of electrolyte, and the conditions of the anodizing process. The paper presents thin Al2O3 oxide layer formed under hard anodizing conditions on a plate made of EN AW-5251 aluminum alloy. The oxidation of the ceramic layer was carried out for 40–80 minutes in a three-component SAS electrolyte (aqueous solution of acids: sulphuric 33 ml/l, adipic 67 g/l, and oxalic 30 g/l) at a temperature of 293–313 K, and the current density was 200–400 A/m2. Presented images were taken by a scanning microscope. A computer analysis of the binary images of layers showed different shapes of pores. The structure of ceramic Al2O3 layers is one of the main factors determining mechanical properties. The resistance to wear of specimen-oxide coating layer depends on porosity, morphology, and roughness of the ceramic layer surface. A 3D oxide coating model, based on the computer analysis of images from a scanning electron microscope (Philips XL 30 ESEM/EDAX), was proposed. PMID:29861823

  5. Catalytic Methane Decomposition over Fe-Al2O3

    KAUST Repository

    Zhou, Lu; Enakonda, Linga Reddy; Saih, Youssef; Loptain, Sergei; Gary, Daniel; Del-Gallo, Pascal; Basset, Jean-Marie

    2016-01-01

    The presence of a Fe-FeAl2O4 structure over an Fe-Al2O3 catalysts is demonstrated to be vital for the catalytic methane decomposition (CMD) activity. After H2 reduction at 750°C, Fe-Al2O3 prepared by means of a fusion method, containing 86.5wt% Fe

  6. Highly-Ordered Magnetic Nanostructures on Self-Assembled α-Al2O3 and Diblock Copolymer Templates

    International Nuclear Information System (INIS)

    Erb, Denise

    2015-08-01

    This thesis shows the preparation of nanostructured systems with a high degree of morphological uniformity and regularity employing exclusively selfassembly processes, and documents the investigation of these systems by means of atomic force microscopy (AFM), grazing incidence small angle X-ray scattering (GISAXS), and nuclear resonant scattering of synchrotron radiation (NRS). Whenever possible, the X-ray scattering methods are applied in-situ and simultaneously in order to monitor and correlate the evolution of structural and magnetic properties of the nanostructured systems. The following systems are discussed, where highly-ordered magnetic nanostructures are grown on α-Al 2 O 3 substrates with topographical surface patterning and on diblock copolymer templates with chemical surface patterning: - Nanofaceted surfaces of α-Al 2 O 3 - Magnetic nanostructures on nanofaceted α-Al 2 O 3 substrates - Thin films of microphase separated diblock copolymers - Magnetic nanostructures on diblock copolymer thin film templates The fact that the underlying self-assembly processes can be steered by external factors is utilized to optimize the degree of structural order in the nanostructured systems. The highly-ordered systems are well-suited for investigations with X-ray scattering methods, since due to their uniformity the inherently averaged scattered signal of a sample yields meaningful information on the properties of the contained nanostructures: By means of an in-situ GISAXS experiment at temperatures above 1000 C, details on the facet formation on α-Al 2 O 3 surfaces are determined. A novel method, merging in-situ GISAXS and NRS, shows the evolution of magnetic states in a system with correlated structural and magnetic inhomogeneity with lateral resolution. The temperature-dependence of the shape of Fe nanodots growing on diblock copolymer templates is revealed by in-situ GISAXS during sputter deposition of Fe. Combining in-situ GISAXS and NRS, the magnetization

  7. Crystalline gamma-Al2O3 physical vapour deposition-coating for steel thixoforging tools.

    Science.gov (United States)

    Bobzin, K; Hirt, G; Bagcivan, N; Khizhnyakova, L; Ewering, M

    2011-10-01

    The process of thixoforming, which has been part of many researches during the last decades, combines the advantages of forging and casting for the shaping of metallic components. But due to the high temperatures of semi-solid steel alloys high demands on the tools are requested. To resists the thermal and mechanical loads (wear, friction, thermal and thermomechanical fatigue) protecting thin films are necessary. In this regard crystalline gamma-Al2O3 deposited via Physical Vapour Deposition (PVD) is a promising candidate: It exhibits high thermal stability, high oxidation resistance and high hot hardness. In the present work the application of a (Ti, Al)N/gamma-Al2O3 coating deposited by means of Magnetron Sputter Ion Plating in an industrial coating unit is presented. The coating was analysed by means of Rockwell test, nanoindentation, and Scanning Electron Microscopy (SEM). The coated tool was tested in thixoforging experiments with steel grade X210CrW12 (AlSI D6). The surface of the coated dies was examined with Scanning Electron Microscope (SEM) after 22, 42, 90 and 170 forging cycles.

  8. Thermally Annealed Iron (Oxide) Thin Film on an Alumina Barrier Layer, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-06

    Herein we show characterization of an Fe thin film on Al_2O_3 after thermal annealing under H_2 using Al Ka X-rays. The XPS survey spectrum, narrow Fe 2p scan, and valence band regions are presented. The survey spectrum shows aluminum signals due to exposure of the underlying Al_2O_3 film during Fe nanoparticle formation.

  9. Formation and surface characterization of nanostructured Al2O3 ...

    Indian Academy of Sciences (India)

    Administrator

    Page 1. Electronic Supplementary Material. Graphical abstract. Formation and surface characterization of nanostructured Al2O3–TiO2 coatings by Vairamuthu Raj and Mohamed Sirajudeen Mumjitha. (pp 1411–1418).

  10. Hazy Al2O3-FTO Nanocomposites: A Comparative Study with FTO-Based Nanocomposites Integrating ZnO and S:TiO2 Nanostructures

    Directory of Open Access Journals (Sweden)

    Shan-Ting Zhang

    2018-06-01

    Full Text Available In this study, we report the use of Al2O3 nanoparticles in combination with fluorine doped tin oxide (F:SnO2, aka FTO thin films to form hazy Al2O3-FTO nanocomposites. In comparison to previously reported FTO-based nanocomposites integrating ZnO and sulfur doped TiO2 (S:TiO2 nanoparticles (i.e., ZnO-FTO and S:TiO2-FTO nanocomposites, the newly developed Al2O3-FTO nanocomposites show medium haze factor HT of about 30%, while they exhibit the least loss in total transmittance Ttot. In addition, Al2O3-FTO nanocomposites present a low fraction of large-sized nanoparticle agglomerates with equivalent radius req > 1 μm; effectively 90% of the nanoparticle agglomerates show req < 750 nm. The smaller feature size in Al2O3-FTO nanocomposites, as compared to ZnO-FTO and S:TiO2-FTO nanocomposites, makes them more suitable for applications that are sensitive to roughness and large-sized features. With the help of a simple optical model developed in this work, we have simulated the optical scattering by a single nanoparticle agglomerate characterized by bottom radius r0, top radius r1, and height h. It is found that r0 is the main factor affecting the HT(λ, which indicates that the haze factor of Al2O3-FTO and related FTO nanocomposites is mainly determined by the total surface coverage of all the nanoparticle agglomerates present.

  11. Growth of pentacene on α -Al2O3 (0001) studied by in situ optical spectroscopy

    Science.gov (United States)

    Zhang, Lei; Fu, X.; Hohage, M.; Zeppenfeld, P.; Sun, L. D.

    2017-09-01

    The growth of pentacene thin films on a sapphire α -Al2O3 (0001) surface was investigated in situ using differential reflectance spectroscopy (DRS). Two different film structures are observed depending on the substrate temperature. If pentacene is deposited at room temperature, a wetting layer consisting of flat-lying molecules is formed after which upright-standing molecular layers with a herringbone structure start to grow. At low substrate temperature of 100 K, the long molecular axis of the pentacene molecules remains parallel to the surface plane throughout the entire growth regime up to rather large thicknesses. Heating thin films deposited at 100 K to room temperature causes the pentacene molecules beyond the wetting layer to stand up and assemble into a herringbone structure. Another interesting observation is the dewetting of the first flat-lying monolayer upon exposure to air, leading to the condensation of islands consisting of upright-standing molecules. Our results emphasize the interplay between growth kinetics and thermodynamics and its influence on the molecular orientation in organic thin films.

  12. Stability and electrical conductivity of water-base Al2O3 nanofluids for different applications

    Directory of Open Access Journals (Sweden)

    M.F. Zawrah

    2016-12-01

    Full Text Available In this study, Al2O3–H2O nanofluids were synthesized using sodium dodecylbenzenesulfonate (SDBS dispersant agent by ultra-sonication method. Different amounts of SDBS i.e. 0.1, 0.2, 0.3, 0.6, 1 and 1.5 wt.% were tested to stabilize the prepared nanofluids. The stability of nanofluids was verified using optical microscope, transmission electron microscope and Zeta potential. After selecting the suitable amount of dispersant, nanofluids with different volume fractions of Al2O3 were prepared. Zeta potential measurement of nanofluids with low alumina and intermediate fractions showed good dispersion of Al2O3 nanoparticles in water, but nanofluids with high mass fraction were easier to aggregate. The stabilized nanofluids were subjected for measuring of rheological behavior and electrical conductivity. The electrical conductivity was correlated to the thermal conductivity according to Wiedemann–Franz law. The results revealed that the nanofluid containing 1% SDBS was the most stable one and settling was observed for the fluid contained 0.75 vol.% of Al2O3 nanoparticles which gave higher viscosity. The rheological measurements indicated that the viscosity of nanofluids decreased firstly with increasing shear rate (shear thinning behavior. Addition of nanoparticles into the base liquid enhanced the electrical conductivity up to 0.2 vol.% of Al2O3 nano-particles after which it decreased.

  13. Mechanochemically synthesized Al2O3-TiC nanocomposite

    International Nuclear Information System (INIS)

    Mohammad Sharifi, E.; Karimzadeh, F.; Enayati, M.H.

    2010-01-01

    Al 2 O 3 -TiC nanocomposite was synthesized by ball milling of aluminum, titanium oxide and graphite powder mixtures. Effect of the milling time and heat treatment temperatures were investigated. The structural evolution of powder particles after different milling times was studied by X-ray diffractometry and scanning electron microscopy. The results showed that after 40 h of ball milling the Al/TiO 2 /C reacted with a self-propagating combustion mode producing Al 2 O 3 -TiC nanocomposite. In final stage of milling, alumina and titanium carbide crystallite sizes were less than 10 nm. After annealing at 900 o C for 1 h, Al 2 O 3 and TiC crystallite sizes remained constant, however increasing annealing temperature to 1200 o C increased Al 2 O 3 and TiC crystallite size to 65 and 30 nm, respectively. No phase change was observed after annealing of the synthesized Al 2 O 3 -TiC powder.

  14. Miscibility of amorphous ZrO2-Al2O3 binary alloy

    Science.gov (United States)

    Zhao, C.; Richard, O.; Bender, H.; Caymax, M.; De Gendt, S.; Heyns, M.; Young, E.; Roebben, G.; Van Der Biest, O.; Haukka, S.

    2002-04-01

    Miscibility is a key factor for maintaining the homogeneity of the amorphous structure in a ZrO2-Al2O3 binary alloy high-k dielectric layer. In the present work, a ZrO2/Al2O3 laminate thin layer has been prepared by atomic layer chemical vapor deposition on a Si (100) wafer. This layer, with artificially induced inhomogeneity (lamination), enables one to study the change in homogeneity of the amorphous phase in the ZrO2/Al2O3 system during annealing. High temperature grazing incidence x-ray diffraction (HT-XRD) was used to investigate the change in intensity of the constructive interference peak of the x-ray beams which are reflected from the interfaces of ZrO2/Al2O3 laminae. The HT-XRD spectra show that the intensity of the peak decreases with an increase in the anneal temperature, and at 800 °C, the peak disappears. The same samples were annealed by a rapid thermal process (RTP) at temperatures between 700 and 1000 °C for 60 s. Room temperature XRD of the RTP annealed samples shows a similar decrease in peak intensity. Transmission electronic microscope images confirm that the laminate structure is destroyed by RTP anneals and, just below the crystallization onset temperature, a homogeneous amorphous ZrAlxOy phase forms. The results demonstrate that the two artificially separated phases, ZrO2 and Al2O3 laminae, tend to mix into a homogeneous amorphous phase before crystallization. This observation indicates that the thermal stability of ZrO2-Al2O3 amorphous phase is suitable for high-k applications.

  15. Catalytic Methane Decomposition over Fe-Al2O3

    KAUST Repository

    Zhou, Lu

    2016-05-09

    The presence of a Fe-FeAl2O4 structure over an Fe-Al2O3 catalysts is demonstrated to be vital for the catalytic methane decomposition (CMD) activity. After H2 reduction at 750°C, Fe-Al2O3 prepared by means of a fusion method, containing 86.5wt% FeAl2O4 and 13.5wt% Fe0, showed a stable CMD activity at 750°C for as long as 10h. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Leaching of Al2O3 in simulated repository conditions

    International Nuclear Information System (INIS)

    Svensson, B.-M.; Dahl, L.

    1978-06-01

    Al 2 O 3 material has been leached at 90 deg C in: simulated ground water at pH 8.5, embedded in bentonite + silica sand saturated with the same water, and in simulated ground water at pH 6 and pH 10. Leaching periods varied from 30 days to 300 days. We observed slight weight increments in all cases from deposits on samples from the environment. These mask weight losses from Al 2 O 3 that may have occurred. (author)

  17. A short-time fading study of Al2O3:C

    International Nuclear Information System (INIS)

    Nascimento, L.F.; Vanhavere, F.; Silva, E.H.; Deene, Y. De

    2015-01-01

    This paper studies the short-time fading from Al 2 O 3 :C by measuring optically stimulated luminescence (OSL) signals (Total OSL: T OSL , and Peak OSL: P OSL ) from droplets and Luxel™ pellets. The influence of various bleaching regimes (blue, green and white) and light power is compared. The fading effect is the decay of the OSL signal in the dark at room temperature. Al 2 O 3 :C detectors were submitted to various bleaching regimes, irradiated with a reference dose and read out after different time spans. Investigations were carried out using 2 mm size droplet detectors, made of thin Al 2 O 3 :C powder mixed with a photocured polymer. Tests were compared to Luxel™-type detectors (Landauer Inc.). Short-time post-irradiation fading is present in OSL results (T OSL and P OSL ) droplets for time spans up to 200 s. The effect of short-time fading can be lowered/removed when treating the detectors with high-power and/or long time bleaching regimes; this result was observed in both T OSL and P OSL from droplets and Luxel™. - Highlights: • Droplet composed of thin powder of Al 2 O 3 :C was prepared using a photo-curable polymer. • Powder grain sizes ranged from 5 μm to 35 μm. • Short-time fading was measured for irradiated samples. • Various bleaching regimes and light power was tested. • Droplets were compared to a commercially dosimeter, Luxel™

  18. Capability for Fine Tuning of the Refractive Index Sensing Properties of Long-Period Gratings by Atomic Layer Deposited Al2O3 Overlays

    Directory of Open Access Journals (Sweden)

    Mateusz Śmietana

    2013-11-01

    Full Text Available This work presents an application of thin aluminum oxide (Al2O3 films obtained using atomic layer deposition (ALD for fine tuning the spectral response and refractive-index (RI sensitivity of long-period gratings (LPGs induced in optical fibers. The technique allows for an efficient and well controlled deposition at monolayer level (resolution ~ 0.12 nm of excellent quality nano-films as required for optical sensors. The effect of Al2O3 deposition on the spectral properties of the LPGs is demonstrated experimentally and numerically. We correlated both the increase in Al2O3 thickness and changes in optical properties of the film with the shift of the LPG resonance wavelength and proved that similar films are deposited on fibers and oxidized silicon reference samples in the same process run. Since the thin overlay effectively changes the distribution of the cladding modes and thus also tunes the device’s RI sensitivity, the tuning can be simply realized by varying number of cycles, which is proportional to thickness of the high-refractive-index (n > 1.6 in infrared spectral range Al2O3 film. The advantage of this approach is the precision in determining the film properties resulting in RI sensitivity of the LPGs. To the best of our knowledge, this is the first time that an ultra-precise method for overlay deposition has been applied on LPGs for RI tuning purposes and the results have been compared with numerical simulations based on LP mode approximation.

  19. Measurement of ZnO/Al2O3 Heterojunction Band Offsets by in situ X-Ray Photoelectron Spectroscopy

    International Nuclear Information System (INIS)

    Lei Hong-Wen; Zhang Hong; Wang Xue-Min; Zhao Yan; Yan Da-Wei; Jiang Zhong-Qian; Yao Gang; Zeng Ti-Xian; Wu Wei-Dong

    2013-01-01

    ZnO films are grown on c-sapphire substrates by laser molecular beam epitaxy. The band offsets of the ZnO/Al 2 O 3 heterojunction are studied by in situ x-ray photoelectron spectroscopy. The valence band of Al 2 O 3 is found to be 3.59±0.05eV below that of ZnO. Together with the resulting conduction band offset of 2.04±0.05eV, this indicates that a type-I staggered band line exists at the ZnO/Al 2 O 3 heterojunction

  20. On the growth of Al2O3 scales

    International Nuclear Information System (INIS)

    Heuer, A.H.; Nakagawa, T.; Azar, M.Z.; Hovis, D.B.; Smialek, J.L.; Gleeson, B.; Hine, N.D.M.; Guhl, H.; Lee, H.-S.; Tangney, P.; Foulkes, W.M.C.; Finnis, M.W.

    2013-01-01

    Understanding the growth of Al 2 O 3 scales requires knowledge of the details of the chemical reactions at the scale–gas and scale–metal interfaces, which in turn requires specifying how the creation/annihilation of O and Al vacancies occurs at these interfaces. The availability of the necessary electrons and holes to allow for such creation/annihilation is a crucial aspect of the scaling reaction. The electronic band structure of polycrystalline Al 2 O 3 thus plays a decisive role in scale formation and is considered in detail, including the implications of a density functional theory (DFT) calculation of the band structure of a Σ7 {45 ¯ 10} bicrystal boundary, for which the atomic structure of the boundary was known from an independent DFT energy-minimization calculation and comparisons with an atomic-resolution transmission electron micrograph of the same boundary. DFT calculations of the formation energy of O and Al vacancies in bulk Al 2 O 3 in various charge states as a function of the Fermi energy suggested that electronic conduction in Al 2 O 3 scales most likely involves excitation of both electrons and holes, which are localized on singly charged O vacancies, V O · and doubly charged Al vacancies, V Al ″ , respectively. We also consider the variation of the Fermi level across the scale and bending (“tilting”) of the conduction band minimum and valence band maximum due to the electric field developed during the scaling reaction. The band structure calculations suggest a new mechanism for the “reactive element” effect—a consequence of segregation of Y, Hf, etc., to grain boundaries in Al 2 O 3 scales, which results in improved oxidation resistance—namely, that the effect is due to the modification of the near-band edge grain-boundary defect states rather than any blocking of diffusion pathways, as previously postulated. Secondly, Al 2 O 3 scale formation is dominated by grain boundary as opposed to lattice diffusion, and there is

  1. Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

    International Nuclear Information System (INIS)

    Richter, Armin; Benick, Jan; Kimmerle, Achim; Hermle, Martin; Glunz, Stefan W.

    2014-01-01

    Thin layers of Al 2 O 3 are well known for the excellent passivation of p-type c-Si surfaces including highly doped p + emitters, due to a high density of fixed negative charges. Recent results indicate that Al 2 O 3 can also provide a good passivation of certain phosphorus-diffused n + c-Si surfaces. In this work, we studied the recombination at Al 2 O 3 passivated n + surfaces theoretically with device simulations and experimentally for Al 2 O 3 deposited with atomic layer deposition. The simulation results indicate that there is a certain surface doping concentration, where the recombination is maximal due to depletion or weak inversion of the charge carriers at the c-Si/Al 2 O 3 interface. This pronounced maximum was also observed experimentally for n + surfaces passivated either with Al 2 O 3 single layers or stacks of Al 2 O 3 capped by SiN x , when activated with a low temperature anneal (425 °C). In contrast, for Al 2 O 3 /SiN x stacks activated with a short high-temperature firing process (800 °C) a significant lower surface recombination was observed for most n + diffusion profiles without such a pronounced maximum. Based on experimentally determined interface properties and simulation results, we attribute this superior passivation quality after firing to a better chemical surface passivation, quantified by a lower interface defect density, in combination with a lower density of negative fixed charges. These experimental results reveal that Al 2 O 3 /SiN x stacks can provide not only excellent passivation on p + surfaces but also on n + surfaces for a wide range of surface doping concentrations when activated with short high-temperature treatments

  2. Direct nanoimprint lithography of Al2O3 using a chelated monomer-based precursor

    International Nuclear Information System (INIS)

    Ganesan, Ramakrishnan; Dinachali, Saman Safari; Lim, Su Hui; Saifullah, M S M; He, Chaobin; Low, Hong Yee; Chong, Wee Tit; Lim, Andrew H H; Yong, Jin Jie; Thian, Eng San

    2012-01-01

    Nanostructuring of Al 2 O 3 is predominantly achieved by the anodization of aluminum film and is limited to obtaining porous anodized aluminum oxide (AAO). One of the main restrictions in developing approaches for direct fabrication of various types of Al 2 O 3 patterns, such as lines, pillars, holes, etc, is the lack of a processable aluminum-containing resist. In this paper, we demonstrate a stable precursor prepared by reacting aluminum tri-sec-butoxide with 2-(methacryloyloxy)ethyl acetoacetate, a chelating monomer, which can be used for large area direct nanoimprint lithography of Al 2 O 3 . Chelation in the precursor makes it stable against hydrolysis whilst the presence of a reactive methacrylate group renders it polymerizable. The precursor was mixed with a cross-linker and their in situ thermal free-radical co-polymerization during nanoimprinting rigidly shaped the patterns, trapped the metal atoms, reduced the surface energy and strengthened the structures, thereby giving a ∼100% yield after demolding. The imprinted structures were heat-treated, leading to the loss of organics and their subsequent shrinkage. Amorphous Al 2 O 3 patterns with line-widths as small as 17 nm were obtained. Our process utilizes the advantages of sol–gel and methacrylate routes for imprinting and at the same time alleviates the disadvantages associated with both these methods. With these benefits, the chelating monomer route may be the harbinger of the universal scheme for direct nanoimprinting of metal oxides. (paper)

  3. Tribological behavior of Nano-Al2O3 and PEEK reinforced PTFE composites

    Science.gov (United States)

    Wang, Banghan; Lv, Qiujuan; Hou, Genliang

    2017-01-01

    The Nano-Al2O3 and PEEK particles synergetic filled PTFE composites were prepared by mechanical blending-molding-sintering method. The tribological behavior of composites with different volume fraction of fillers was tested on different test conditions by a MMW-1A block-on-ring friction and wear tester. The transfer film on counterpart 5A06 Aluminum alloy ring was inspected and anslyzed with scanning electronic microscopy (SEM) and X-ray diffraction (XRD). The results demonstrated that the lowest friction coefficient was gained when the PTFE composite was filled with only 10% PEEK. The friction coefficient decreases gradually with the increasing content of PEEK. The special wear rate of 10% PEEK/PTFE were decreased clearly with filled different contents of nano-Al2O3 particles. The special wear rate of the sample with 5% nano-Al2O3 and 10% PEEK had the lowest volume wear rate. The sliding speed effect significantly on the tribological behavior of nano-Al2O3/PEEK/PTFE composites.

  4. Plasma-Assisted ALD TiN/Al2O3 stacks for MIMIM Trench Capacitor Applications

    NARCIS (Netherlands)

    Hoogeland, D.; Jinesh, K.B.; Voogt, F.C.; Besling, W.F.A.; Lamy, Y.; Roozeboom, F.; Sanden, van de M.C.M.; Kessels, W.M.M.; Gendt, de S.

    2009-01-01

    In this paper we report on the overall plasma-assisted ALD processes of Al2O3 and TiN conducted in a single reactor chamber and at a single temperature (340 oC). The individual Al2O3 and TiN films in the stack were consecutively deposited in such a way that they were separated by purge intervals

  5. Muonium in Al2O3 powder at low temperature

    International Nuclear Information System (INIS)

    Kiefl, R.F.; Warren, J.B.; Oram, C.J; Brewer, J.H.; Harshman, D.R.

    1982-04-01

    Measurements of muonium (μ + e - ) spin relaxation in a finely powdered sample of γ-Al 2 O 3 in a He (or Ne) atmosphere indicate that the muonium atoms escape the powder grains with a high efficiency at low temperatures (T < 30 K). The muonium spin relaxation rate is proportional to the fraction of the powder surface area not covered by adsorbed He (Ne)

  6. Use of thin films obtained by electron beam evaporation as optical wave guide

    International Nuclear Information System (INIS)

    Nobre, S.A.A.; Oliveira, C.A.S. de; Freire, G.F.de O.

    1986-01-01

    Thin films evaporated by electron beam for the fabrication of planar optical waveguides were used. The tested materials were aluminium oxide (Al 2 O 3 ) and tantalum pentoxide (Ta 2 O 5 ). The effect of annealing conditions on the film absorption was investigated for Ta 2 O 5 . The Al 2 O 3 films were characterized by the method of guided modes, in terms of refractive index measurements and film thickness. Atenuation measurements were also carried out. (M.C.K.) [pt

  7. Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams

    Science.gov (United States)

    Uedono, Akira; Nabatame, Toshihide; Egger, Werner; Koschine, Tönjes; Hugenschmidt, Christoph; Dickmann, Marcel; Sumiya, Masatomo; Ishibashi, Shoji

    2018-04-01

    Defects in the Al2O3(25 nm)/GaN structure were probed by using monoenergetic positron beams. Al2O3 films were deposited on GaN by atomic layer deposition at 300 °C. Temperature treatment above 800 °C leads to the introduction of vacancy-type defects in GaN due to outdiffusion of atoms from GaN into Al2O3. The width of the damaged region was determined to be 40-50 nm from the Al2O3/GaN interface, and some of the vacancies were identified to act as electron trapping centers. In the Al2O3 film before and after annealing treatment at 300-900 °C, open spaces with three different sizes were found to coexist. The density of medium-sized open spaces started to decrease above 800 °C, which was associated with the interaction between GaN and Al2O3. Effects of the electron trapping/detrapping processes of interface states on the flat band voltage and the defects in GaN were also discussed.

  8. On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes.

    Science.gov (United States)

    Simon, Daniel K; Jordan, Paul M; Mikolajick, Thomas; Dirnstorfer, Ingo

    2015-12-30

    A controlled field-effect passivation by a well-defined density of fixed charges is crucial for modern solar cell surface passivation schemes. Al2O3 nanolayers grown by atomic layer deposition contain negative fixed charges. Electrical measurements on slant-etched layers reveal that these charges are located within a 1 nm distance to the interface with the Si substrate. When inserting additional interface layers, the fixed charge density can be continuously adjusted from 3.5 × 10(12) cm(-2) (negative polarity) to 0.0 and up to 4.0 × 10(12) cm(-2) (positive polarity). A HfO2 interface layer of one or more monolayers reduces the negative fixed charges in Al2O3 to zero. The role of HfO2 is described as an inert spacer controlling the distance between Al2O3 and the Si substrate. It is suggested that this spacer alters the nonstoichiometric initial Al2O3 growth regime, which is responsible for the charge formation. On the basis of this charge-free HfO2/Al2O3 stack, negative or positive fixed charges can be formed by introducing additional thin Al2O3 or SiO2 layers between the Si substrate and this HfO2/Al2O3 capping layer. All stacks provide very good passivation of the silicon surface. The measured effective carrier lifetimes are between 1 and 30 ms. This charge control in Al2O3 nanolayers allows the construction of zero-fixed-charge passivation layers as well as layers with tailored fixed charge densities for future solar cell concepts and other field-effect based devices.

  9. Investigating the nanostructure and thermal properties of chiral poly(amide-imide)/Al2O3 compatibilized with 3-aminopropyltriethoxysilane

    International Nuclear Information System (INIS)

    Mallakpour, Shadpour; Dinari, Mohammad

    2013-01-01

    Graphical abstract: - Highlights: • Chiral polymer with different functional groups was prepared in green route. • The surface of Al 2 O 3 -NPs was treated by KH550 as a silane coupling agent. • NCs of poly(amide-imide) and Al 2 O 3 were synthesized by ultrasonic irradiation. • TEM results show good dispersion of Al 2 O 3 -NPs in the poly(amide-imide) matrix. • The thermal and mechanical properties of the hybrid materials were improved. - Abstract: Novel chiral poly(amide-imide) (PAI)/Al 2 O 3 nanocomposites were prepared via incorporating surface modified Al 2 O 3 nanoparticles into polymer matrices for the first time. In the process of preparing the nanocomposites, severe aggregation of Al 2 O 3 nanoparticles could be reduced by surface modification and γ-aminopropyltriethoxysilane. The optically active PAI chains were formed from the polycondensation reaction of N,N′-(pyromellitoyl)-bis-phenylalanine diacid with 2-(3,5-diaminophenyl)-benzimidazole in green condition. The obtained polymer and inorganic metal oxide nanoparticles were used to prepare chiral PAI/Al 2 O 3 nanocomposites through ultrasonic irradiation. The resulting nanoparticle filled composites were also characterized by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and thermogravimetric analysis (TGA) techniques. TGA thermographs confirmed that the heat stability of the prepared nanoparticle-reinforced composites was improved. Mechanical properties showed that the film containing 10 wt% of modified Al 2 O 3 had a tensile strength of the order of 83.6 MPa, relative to the 64.3 MPa of the pure PAI

  10. Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition.

    Science.gov (United States)

    Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka L; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo-Pekka

    2016-11-04

    The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm(-1), above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m(2) K GW(-1), and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates.

  11. Time resolved emission spectroscopy investigations of pulsed laser ablated plasmas of ZrO2 and Al2O3

    International Nuclear Information System (INIS)

    Hadoko, A D; Lee, P S; Lee, P; Mohanty, S R; Rawat, R S

    2006-01-01

    With the rising trend of synthesizing ultra thin films and/or quantum-confined materials using laser ablation, optimization of deposition parameters plays an essential role in obtaining desired film characteristics. This paper presents the initial step of plasma optimization study by examining temporal distribution of the plasma formation by pulsed laser ablation of materials. The emitted spectra of ZrO 2 and Al 2 O 3 are obtained ∼3mm above the ablated target to derive the ablated plasma characteristics. The plasma temperature is estimated to be at around 2.35 eV, with electron density of 1.14 x 10 16 (cm -3 ). Emission spectra with different gate delay time (40-270 ns) are captured to study the time resolved plume characteristics. Transitory elemental species are identified

  12. ??????????? ??????????????? ????? ??????-???????? ????????????? ?????????? ??????? ?aO?Al2O3?TiO2 ??? ???????? ?????? ?????

    OpenAIRE

    ???????, ????; ??????, ?????????

    2011-01-01

    ? ????? ?????? ?????????? ???????? ?????????????? ??????????? ????????????? ??? ??????-????????? ???????????????? ?????????? ??????? ?aO?Al2O3?TiO2, ?? ???????? ??????? ? ???????????? ??????? ??? ???????? ? ?????? ????????? ?????? ?????. ???????? ?????????? ???????? ??? ??????????? ?????????? ??????? ????????? ???????????? ?????????? ??? ??????????? 12000?, ?? ????????? ?????????????? ????????????? ???????, ????????? ???? ? ?????????? ????? ???????? ??????? ???????????. ????????, ?? ?? ...

  13. Nanoscale formation of new solid-state compounds by topochemical effects: The interfacial reactions ZnO with Al2O3 as a model system

    International Nuclear Information System (INIS)

    Pin, Sonia; Ghigna, Paolo; Spinolo, Giorgio; Quartarone, Eliana; Mustarelli, Piercarlo; D'Acapito, Francesco; Migliori, Andrea; Calestani, Gianluca

    2009-01-01

    The chemical reactivity of thin layers (ca. 10 nm thick) of ZnO deposited onto differently oriented Al 2 O 3 single crystals has been investigated by means of atomic force microscopy inspections and X-ray absorption spectroscopy at the Zn-K edge. The (0001) ZnO -parallel (112-bar0) sapphire interface yields the ZnAl 2 O 4 spinel and a quite stable film morphology. Instead, the (112-bar0) ZnO -parallel (11-bar02) sapphire and (0001) ZnO -parallel (0001) sapphire interfaces give origin to a new compound (or, possibly, even two new compounds), whose chemical nature is most likely that of a ZnO/Al 2 O 3 phase, with still unknown composition and crystal structure. In addition, in the last two cases, films collapse into prismatic twins of ca. 1 μm in dimension. These experimental findings demonstrate that in a solid-state reaction, the topotactical relationships between the reacting solids are of crucial importance not only in determining the kinetic and mechanisms of the process in its early stages, but even the chemical nature of the product. - Graphical abstract: EXAFS Fourier transforms and morphology of different reactive interfaces between ZnO and Al 2 O 3 .

  14. Rise and fall of ferromagnetism in O-irradiated Al2O3 single crystals

    International Nuclear Information System (INIS)

    Li, Qiang; Xu, Juping; Liu, Jiandang; Du, Huaijiang; Ye, Bangjiao

    2015-01-01

    In dilute magnetic semiconductors studies, sapphire was usually used as non-magnetic substrate for films. We observed weak ferromagnetic component in Al 2 O 3 single crystal substrate, and excluded the possibility of ferromagnetic contaminations carefully by inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The ferromagnetism rise and fall during the process of annealing-oxygen irradiation-annealing of the sapphire. The ferromagnetic changes are consistent with Al-vacancy related defects detected by positron annihilation spectroscopy. With first-principle calculations, we confirm that Al-vacancy can introduce magnetic moment for 3 μB in Al 2 O 3 crystal and form stable V Al -V Al ferromagnetic coupling at room temperature

  15. Probing the stability of Al 2O 3/Ge structures with ion beams

    Science.gov (United States)

    Bom, N. M.; Soares, G. V.; Krug, C.; Baumvol, I. J. R.; Radtke, C.

    2012-02-01

    Al 2O 3 films were deposited on Ge substrates by reactive sputtering. Resulting samples were submitted to different post-deposition annealings (PDAs) in order to probe composition modifications induced by such treatments. Nuclear reaction profiling (NRP) revealed that O incorporation depends on PDA temperature and on the employed atmosphere (water or oxygen). We also found that O from the gas phase strongly interacts with the Ge semiconductor substrate when PDA is performed with water at 500 °C. Ion scattering analyses evidenced an increase of Ge concentration throughout the Al 2O 3 dielectric layer and on the sample surface associated with the oxidation of the Ge substrate. These findings are explained by GeO desorption resulting from chemical reactions occurring at the dielectric/Ge interface.

  16. Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy.

    Science.gov (United States)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun; Yang, Yuzhen; Yu, Yang; Wen, Kaile

    2017-12-01

    Pure aluminum oxide (Al 2 O 3 ) and zinc aluminum oxide (Zn x Al 1-x O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E g ) of the Zn x Al 1-x O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and alignment of atomic-layer-deposited Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction were investigated in detail using charge-corrected X-ray photoelectron spectroscopy. In this work, different methodologies were adopted to recover the actual position of the core levels in insulator materials which were easily affected by differential charging phenomena. Valence band offset (ΔE V ) and conduction band offset (ΔE C ) for the interface of the Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction have been constructed. An accurate value of ΔE V  = 0.82 ± 0.12 eV was obtained from various combinations of core levels of heterojunction with varied Al 2 O 3 thickness. Given the experimental E g of 6.8 eV for Al 2 O 3 and 5.29 eV for Zn 0.8 Al 0.2 O, a type-I heterojunction with a ΔE C of 0.69 ± 0.12 eV was found. The precise determination of the band alignment of Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction is of particular importance for gaining insight to the design of various electronic devices based on such heterointerface.

  17. Enhanced reactivity and related optical changes of Ag nanoparticles on amorphous Al2O3 supports

    International Nuclear Information System (INIS)

    Peláez, R J; Castelo, A; Afonso, C N; Borrás, A; Espinós, J P; Riedel, S; Leiderer, P; Boneberg, J

    2013-01-01

    Pairs of samples containing Ag nanoparticles (NPs) of different dimensions have been produced under the same conditions but on different substrates, namely standard glass slides and a thin layer of amorphous aluminum oxide (a-Al 2 O 3 ) on-glass. Upon storage in ambient conditions (air and room temperature) the color of samples changed and a blue-shift and damping of the surface plasmon resonance was observed. The changes are weaker for the samples on-glass and tend to saturate after 12 months. In contrast, the changes for the samples on a-Al 2 O 3 appear to be still progressing after 25 months. While x-ray photoelectron spectroscopy shows a slight sulfurization and negligible oxidation of the Ag for the on-glass samples upon 25 months aging, it shows that Ag is strongly oxidized for the on a-Al 2 O 3 samples and sulfurization is negligible. Both optical and chemical results are consistent with the production of a shell at the expense of a reduction of the metal core dimensions, the latter being responsible for the blue-shift and related to the small ( 2 O 3 supports goes along with specific morphological changes of the Ag NPs and the observation of nitrogen. (paper)

  18. Steady-state pool boiling heat transfer on nicr wire surface submerged in Al2O3 nano-fluids

    International Nuclear Information System (INIS)

    Dereje Shiferaw; Hyun Sun Park; Bal Raj Sehgal

    2005-01-01

    found in similar experiments with distilled water. The experiments have also shown that if some nano-particles stick to the surface of the hot sphere (in the event that the surface is not washed in-between the experiments), film boiling practically disappears and the quench proceeds very rapidly. Both of these results offer possibilities: the greater stability of film could suppress steam explosions or decrease the range where they occur; the rapid quenching could provide faster coolability of a degraded core in the early part of the severe accident, when most fuel bundles are still standing but are close to the Zircaloy oxidation temperature. In this study, pool boiling heat transfer of Al 2 O 3 nano-fluids is investigated. The experiment was performed in a pool boiling test facility which consists of a test vessel, a NiCr wire, a DC power supply with variable current up to 20 A, a data acquisition system for the measurement of temperatures and a CCD high-speed camera (up to 8000 fps). The Al 2 O 3 particles with an average size of 33 nm are dispersed by Ultrasonic vibrator into distilled water to prepare the nano-fluids having very dilute concentrations of 0.01 to 1.0 g/liter. In this paper, the nucleate pool boiling heat transfer process on a thin wire surface at atmospheric pressure in dilute Al 2 O 3 nano-fluids is observed and carefully analyzed. In addition, the effects of different parameters contributing to CHF are investigated to understand the CHF enhancement in nano-fluids. Pictures taken with a high-speed CCD camera for the vapor characteristics such as vapor formation, departure and accumulation rates are analyzed. (authors)

  19. Luminescent properties of Al2O3: Tb powders

    International Nuclear Information System (INIS)

    Esparza G, A.E.; Garcia, M.; Falcony, C.; Azorin N, J.

    2000-01-01

    In this work the photo luminescent and cathode luminescent characteristics of aluminium oxide (Al 2 O 3 ) powders impurified with terbium (Tb) were studied for their use in dosimetry. The optical, structural, morphological characteristics of the powders as function of variation in the impurity concentration and the annealing temperature will be presented. As regards the optical properties of powders (photoluminescence and cathode luminescence) it was observed a characteristic emission associated with radiative transitions between electron energy levels of terbium, the spectra associated with this emission consists of several peaks associated with such transitions. In the structural and morphological characterization (X-ray diffraction and scanning electron microscopy) it was appreciated that in accordance the annealing temperature of powders is augmented it is evident the apparition of certain crystalline phases. The results show that this is a promissory material for radiation dosimetry. (Author)

  20. Inkjet-printed thin film radio-frequency capacitors based on sol-gel derived alumina dielectric ink

    KAUST Repository

    McKerricher, Garret; Maller, Robert; Vaseem, Mohammad; McLachlan, Martyn A.; Shamim, Atif

    2017-01-01

    passive electronics. The ability to spatially pattern high quality Al2O3 thin films using, for example, inkjet printing would tremendously simplify the incumbent fabrication processes – significantly reducing cost and allowing for the development of large

  1. Temperature-programmed reaction of CO2 reduction in the presence of hydrogen over Fe/Al2O3, Re/Al2O3 and Cr-Mn-O/Al2O3 catalysts

    International Nuclear Information System (INIS)

    Mirzabekova, S.R.; Mamedov, A.B.; Krylov, O.V.

    1996-01-01

    Regularities in CO 2 reduction have been studied using the systems Fe/Al 2 O 3 , Re/Al 2 O 3 and Cr-Mn-O/Al 2 O 3 under conditions of thermally programmed reaction by way of example. A sharp increase in the reduction rate in the course of CO 2 interaction with reduced Fe/Al 2 O 3 and Re/Al 2 O 3 , as well as with carbon fragments with addition in CO 2 flow of 1-2%H 2 , has been revealed. The assumption is made on intermediate formation of a formate in the process and on initiating effect of hydrogen on CO 2 reduction by the catalyst. Refs. 26, figs. 10

  2. Increasing the stability of DNA nanostructure templates by atomic layer deposition of Al2O3 and its application in imprinting lithography

    Directory of Open Access Journals (Sweden)

    Hyojeong Kim

    2017-11-01

    Full Text Available We present a method to increase the stability of DNA nanostructure templates through conformal coating with a nanometer-thin protective inorganic oxide layer created using atomic layer deposition (ALD. DNA nanotubes and origami triangles were coated with ca. 2 nm to ca. 20 nm of Al2O3. Nanoscale features of the DNA nanostructures were preserved after the ALD coating and the patterns are resistive to UV/O3 oxidation. The ALD-coated DNA templates were used for a direct pattern transfer to poly(L-lactic acid films.

  3. Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

    DEFF Research Database (Denmark)

    Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

    2017-01-01

    Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement...

  4. Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer deposition.

    Science.gov (United States)

    Scarel, Giovanna; Na, Jeong-Seok; Parsons, Gregory N

    2010-04-21

    Experimental transmission absorbance infrared spectra of γ-Al(2)O(3) showing evidence of the angular dependence of the peaks of surface modes appearing next to the longitudinal optical phonon frequency ω(LO) (the Berreman effect) are collected from heat-treated thin oxide films deposited with thickness uniformity on Si(100) using atomic layer deposition. The peak area of the most intense surface longitudinal optical mode is plotted versus the infrared beam incidence angle θ(0). The experimental points closely follow the sin(4)(θ(0)) function in a broad thickness range. The best match occurs at a critical thickness, where a linear relationship exists between the surface longitudinal optical mode intensity and film thickness. Simulations suggest that below the critical thickness the sin(4)(θ(0)) behavior can be explained by refraction phenomena at the air/thin film and thin film/substrate interfaces. Above the critical thickness, the experimentally obtained result is derived from field boundary conditions at the air/thin film interface. The sin(4)(θ(0)) functional trend breaks down far above the critical thickness. This picture indicates that infrared radiation has a limited penetration depth into the oxide film, similarly to electromagnetic waves in conductors. Consequently, surface longitudinal optical modes are viewed as bulk phonons excited down to the penetration depth of the infrared beam. Comparison with simulated data suggests that the infrared radiation absorptance of surface longitudinal optical modes tends to approach the sin(2)(θ(0)) trend. Reflection phenomena are considered to be the origin of the deviation from the sin(4)(θ(0)) trend related to refraction.

  5. Effect of ozone concentration on silicon surface passivation by atomic layer deposited Al2O3

    International Nuclear Information System (INIS)

    Gastrow, Guillaume von; Li, Shuo; Putkonen, Matti; Laitinen, Mikko; Sajavaara, Timo; Savin, Hele

    2015-01-01

    Highlights: • The ALD Al 2 O 3 passivation quality can be controlled by the ozone concentration. • Ozone concentration affects the Si/Al 2 O 3 interface charge and defect density. • A surface recombination velocity of 7 cm/s is reached combining ozone and water ALD. • Carbon and hydrogen concentrations correlate with the surface passivation quality. - Abstract: We study the impact of ozone-based Al 2 O 3 Atomic Layer Deposition (ALD) on the surface passivation quality of crystalline silicon. We show that the passivation quality strongly depends on the ozone concentration: the higher ozone concentration results in lower interface defect density and thereby improved passivation. In contrast to previous studies, our results reveal that too high interface hydrogen content can be detrimental to the passivation. The interface hydrogen concentration can be optimized by the ozone-based process; however, the use of pure ozone increases the harmful carbon concentration in the film. Here we demonstrate that low carbon and optimal hydrogen concentration can be achieved by a single process combining the water- and ozone-based reactions. This process results in an interface defect density of 2 × 10 11 eV −1 cm −2 , and maximum surface recombination velocities of 7.1 cm/s and 10 cm/s, after annealing and after an additional firing at 800 °C, respectively. In addition, our results suggest that the effective oxide charge density can be optimized in a simple way by varying the ozone concentration and by injecting water to the ozone process.

  6. Al2O3- BSST Based Chemical Sensors for Ammonia Gas Sensing

    Directory of Open Access Journals (Sweden)

    L. A. Patil

    2009-10-01

    Full Text Available Gas sensing behaviour of pure and modified (Ba0.9Sr0.1(Sn0.5Ti0.5O3 (BSST thick films is reported in this article. The surface of the BSST thick film was modified by dipping it into aqueous solution of AlCl3, for different intervals of time. These films were then dried at 500 0C for 24 hours in air ambient for transformation of AlCl3 into Al2O3, for the evaporation of organic binders and also to improve the texture of the film. The gas response, selectivity, response and recovery time of the sensors were measured and presented. The role played by the aluminium species to improve the gas sensing performance of the sensors is discussed.

  7. Al2O3 Coatings on Magnesium Alloy Deposited by the Fluidized Bed (FB Technique

    Directory of Open Access Journals (Sweden)

    Gabriele Baiocco

    2018-01-01

    Full Text Available Magnesium alloys are widely employed in several industrial domains for their outstanding properties. They have a high strength-weight ratio, with a density that is lower than aluminum (33% less, and feature good thermal properties, dimensional stability, and damping characteristics. However, they are vulnerable to oxidation and erosion-corrosion phenomena when applied in harsh service conditions. To avoid the degradation of magnesium, several coating methods have been presented in the literature; however, all of them deal with drawbacks that limit their application in an industrial environment, such as environmental pollution, toxicity of the coating materials, and high cost of the necessary machinery. In this work, a plating of Al2O3 film on a magnesium alloy realized by the fluidized bed (FB technique and using alumina powder is proposed. The film growth obtained through this cold deposition process is analyzed, investigating the morphology as well as tribological and mechanical features and corrosion behavior of the plated samples. The resulting Al2O3 coatings show consistent improvement of the tribological and anti-corrosive performance of the magnesium alloy.

  8. The MgO-Al2O3-SiO2 system - Free energy of pyrope and Al2O3-enstatite. [in earth mantle formation

    Science.gov (United States)

    Saxena, S. K.

    1981-01-01

    The model of fictive ideal components is used to determine Gibbs free energies of formation of pyrope and Al2O3-enstatite from the experimental data on coexisting garnet and orthopyroxene and orthopyroxene and spinel in the temperature range 1200-1600 K. It is noted that Al2O3 forms an ideal solution with MgSiO3. These thermochemical data are found to be consistent with the Al2O3 isopleths that could be drawn using most recent experimental data and with the reversed experimental data on the garnet-spinel field boundary.

  9. Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

    Science.gov (United States)

    Chang, P. K.; Hwu, J. G.

    2018-02-01

    Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

  10. Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivity

    Science.gov (United States)

    Yang, Yu; Koeck, Franz A.; Dutta, Maitreya; Wang, Xingye; Chowdhury, Srabanti; Nemanich, Robert J.

    2017-10-01

    This study investigates how the surface conductivity of H-terminated diamond can be preserved and stabilized by using a dielectric layer with an in situ post-deposition treatment. Thin layers of Al2O3 were grown by plasma enhanced atomic layer deposition (PEALD) on H-terminated undoped diamond (100) surfaces. The changes of the hole accumulation layer were monitored by correlating the binding energy of the diamond C 1s core level with electrical measurements. The initial PEALD of 1 nm Al2O3 resulted in an increase of the C 1s core level binding energy consistent with a reduction of the surface hole accumulation and a reduction of the surface conductivity. A hydrogen plasma step restored the C 1s binding energy to the value of the conductive surface, and the resistance of the diamond surface was found to be within the range for surface transfer doping. Further, the PEALD growth did not appear to degrade the surface conductive layer according to the position of the C 1s core level and electrical measurements. This work provides insight into the approaches to establish and control the two-dimensional hole-accumulation layer of the H-terminated diamond and improve the stability and performance of H-terminated diamond electronic devices.

  11. Room temperature atomic layer deposited Al2O3 on CH3NH3PbI3 characterized by synchrotron-based X-ray photoelectron spectroscopy

    Science.gov (United States)

    Kot, Małgorzata; Das, Chittaranjan; Henkel, Karsten; Wojciechowski, Konrad; Snaith, Henry J.; Schmeisser, Dieter

    2017-11-01

    An ultrathin Al2O3 film deposited on methylammonium lead triiodide (CH3NH3PbI3) perovskite has the capability to suppress the carrier recombination process and improve the perovskite solar cells efficiency and stability. However, annealing at temperatures higher than 85 °C degrades the CH3NH3PbI3 perovskite film. The X-ray photoelectron spectroscopy study performed in this work indicates that it is possible to grow Al2O3 by atomic layer deposition on the perovskite at room temperature, however, besides pure Al2O3 some OH groups are found and the creation of lead and iodine oxides at the Al2O3/CH3NH3PbI3 interface takes place.

  12. Atomic to Nanoscale Investigation of Functionalities of Al2O3 Coating Layer on Cathode for Enhanced Battery Performance

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Pengfei; Zheng, Jianming; Zhang, Xiaofeng; Xu, Rui; Amine, Khalil; Xiao, Jie; Zhang, Jiguang; Wang, Chong M.

    2016-01-06

    Surface coating of cathode has been identified as an effective approach for enhancing the capacity retention of layered structure cathode. However, the underlying operating mechanism of such a thin layer of coating, in terms of surface chemical functionality and capacity retention, remains unclear. In this work, we use aberration corrected scanning transmission electron microscopy and high efficient spectroscopy to probe the delicate functioning mechanism of Al2O3 coating layer on Li1.2Ni0.2Mn0.6O2 cathode. We discovered that in terms of surface chemical function, the Al2O3 coating suppresses the side reaction between cathode and the electrolyte upon the battery cycling. At the same time, the Al2O3 coating layer also eliminates the chemical reduction of Mn from the cathode particle surface, therefore avoiding the dissolution of the reduced Mn into the electrolyte. In terms of structural stability, we found that the Al2O3 coating layer can mitigate the layer to spinel phase transformation, which otherwise will initiate from the particle surface and propagate towards the interior of the particle with the progression of the battery cycling. The atomic to nanoscale effects of the coating layer observed here provide insight for optimized design of coating layer on cathode to enhance the battery properties.

  13. Directed laser processing of compacted powder mixtures Al2O3-TiO2-Y2O3

    Directory of Open Access Journals (Sweden)

    Vlasova M.

    2013-01-01

    Full Text Available The phase formation, microstructure and surface texture of laser treated ternary powder mixtures of Al2O3-TiO2-Y2O3 had been studied. Rapid high temperature heating and subsequent rapid cooling due to the directed movement of the laser beam forms concave ceramic tracks. Phase composition and microstructure of the tracks depends on the Al2O3 content and the TiO2/Y2O3 ratio of the initial mixtures. The main phases observed are Y3Al5O12, Y2Ti2O7, Al2O3 and Al2TiO5. Due to the temperature gradient in the heating zone, complex layered structures are formed. The tracks consist of three main layers: a thin surface layer, a layer of crystallization products of eutectic alloys, and a lower sintered layer. The thickness of the crystallization layer and the shrinkage of the irradiation zone depend on the amount of Y3Al5O12 and Al2O3 crystallized from the melt.

  14. Al2O3 doping of TiO2 electrodes and applications in dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Eom, Tae Sung; Kim, Kyung Hwan; Bark, Chung Wung; Choi, Hyung Wook

    2014-01-01

    Dye-sensitized solar cells (DSSCs) have been intensively studied since their discovery in 1991. DSSCs have been extensively researched over the past decades as cheaper alternatives to silicon solar cells due to their high energy-conversion efficiency and their low production cost. However, some problems need to be solved in order to enhance the efficiency of DSSCs. In particular, the electron recombination that occurs due to the contact between the transparent conductive oxide (TCO) and a redox electrolyte is one of the main limiting factors of efficiency. In this work, we report for the first time the improvement of the photovoltaic characteristics of DSSCs by doping TiO 2 with Al 2 O 3 . DSSCs were constructed using composite particles of Al 2 O 3 -doped TiO 2 and TiO 2 nanoparticles. The DSSCs using Al 2 O 3 showed the maximum conversion efficiency of 6.29% due to effective electron transport. DSSCs based on Al 2 O 3 -doped TiO 2 films showed better photovoltaic performance than cells fabricated with only TiO 2 nanoparticles. This result is attributed to the prevention of electron recombination between electrons in the TiO 2 conduction band with holes in the dye or the electrolyte. There mechanism is suggested based on impedance results, which indicated improved electron transport at the TiO 2 /dye/electrolyte interface.

  15. CHF Enhancement in Flow Boiling using Al2O3 Nano-Fluid and Al2O3 Nano-Particle Deposited Tube

    International Nuclear Information System (INIS)

    Kim, Tae Il; Chun, T. H.; Chang, S. H.

    2010-01-01

    Nano-fluids are considered to have strong ability to enhance CHF. Most CHF experiments using nano-fluids were conducted in pool boiling conditions. However there are very few CHF experiments with nano-fluids in flow boiling condition. In the present study, flow boiling CHF experiments using bare round tube with Al 2 O 3 nano-fluid and Al 2 O 3 nano-particle deposited tube with DI water were conducted under atmospheric pressure. CHFs were enhanced up to ∼ 80% with Al 2 O 3 nano-fluid and CHFs with Al 2 O 3 nano-particle deposited tube were also enhanced up to ∼ 80%. Inner surface of test section tube were observed by SEM and AFM after CHF experiments

  16. Post deposition annealing effect on the properties of Al2O3/InP interface

    Science.gov (United States)

    Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

    2018-02-01

    Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

  17. Analyzing the anodic reactions for iron surface with a porous Al2O3 cluster with the scanning vibrating electrode

    Science.gov (United States)

    Eliyan, Faysal Fayez

    2017-09-01

    The Scanning Vibrating Electrode Technique (SVET) was used to analyze the anodic reactions inside and around a porous Al2O3 cluster embedded onto an iron foil. The tests were carried out at -0.7 V vs. Saturated Calomel Electrode, in naturally aerated solutions of 0.1, 0.2, 0.35, and 0.5 M bicarbonate concentration. During 10 h of testing, the SVET showed evidence for a formation of a passive film in and around the cluster, in the scanning area shown in the graphical abstract. In the dilute 0.1 and 0.2 M solutions, the passive films formed slower than those in 0.35 and 0.5 M solutions. In the SVET maps, the passive films showed that they could suppress dissolution to currents comparable to those of slower dissolution under the porous Al2O3 cluster.

  18. A new high-κ Al2O3 based metal-insulator-metal antifuse

    Science.gov (United States)

    Tian, Min; Zhong, Huicai; Li, Li; Wang, Zhigang

    2018-06-01

    In this paper, a new metal-insulator-metal (MIM) antifuse was fabricated with the high κ Al2O3 deposited by atomic layer deposition (ALD) as the dielectric. On this high κ antifuse structure, the very low on-state resistance was obtained under certain programming conditions. It is the first time that the antifuse on-state resistance has been found decreasing along with the increase of dielectric film thickness, which is attributed to a large current overshoot during breakdown. For the device with a dielectric thickness of 12 nm, very large overshoot current (∼60 mA) was observed and extremely low on-state resistance (∼10 Ω) was achieved.

  19. Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1−x as potential gate dielectrics for GaN/AlxGa1−xN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Partida-Manzanera, T.; Roberts, J. W.; Sedghi, N.; Potter, R. J.; Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Tripathy, S.

    2016-01-01

    This paper describes a method to optimally combine wide band gap Al 2 O 3 with high dielectric constant (high-κ) Ta 2 O 5 for gate dielectric applications. (Ta 2 O 5 ) x (Al 2 O 3 ) 1−x thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped Al x Ga 1−x N/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta 2 O 5 molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al 2 O 3 to 4.6 eV for pure Ta 2 O 5 . The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al 2 O 3 up to 25.6 for Ta 2 O 5 . The effect of post-deposition annealing in N 2 at 600 °C on the interfacial properties of undoped Al 2 O 3 and Ta-doped (Ta 2 O 5 ) 0.12 (Al 2 O 3 ) 0.88 films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al 2 O 3 /GaN-HEMT and (Ta 2 O 5 ) 0.16 (Al 2 O 3 ) 0.84 /GaN-HEMT samples increased by ∼1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al 2 O 3 can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents

  20. Electrochemical promotion of propane oxidation on Pt deposited on a dense β"-Al2O3 ceramic Ag+ conductor

    Directory of Open Access Journals (Sweden)

    Michail eTsampas

    2013-08-01

    Full Text Available A new kind of electrochemical catalyst based on a Pt porous catalyst film deposited on a β"-Al2O3 ceramic Ag+ conductor was developed and evaluated during propane oxidation. It was observed that upon anodic polarization, the rate of propane combustion was significantly electropromoted up to 400%. Moreover, for the first time, exponential increase of the catalytic rate was evidenced during galvanostatic transient experiment in excellent agreement with EPOC equation.

  1. Room-temperature aqueous plasma electrolyzing Al2O3 nano-coating on carbon fiber

    Science.gov (United States)

    Zhang, Yuping; Meng, Yang; Shen, Yonghua; Chen, Weiwei; Cheng, Huanwu; Wang, Lu

    2017-10-01

    A novel room-temperature aqueous plasma electrolysis technique has been developed in order to prepared Al2O3 nano-coating on each fiber within a carbon fiber bundle. The microstructure and formation mechanism of the Al2O3 nano-coating were systematically investigated. The oxidation resistance and tensile strength of the Al2O3-coated carbon fiber was measured at elevated temperatures. It showed that the dense Al2O3 nano-coating was relatively uniformly deposited with 80-120 nm in thickness. The Al2O3 nano-coating effectively protected the carbon fiber, evidenced by the slower oxidation rate and significant increase of the burn-out temperature from 800 °C to 950 °C. Although the bare carbon fiber remained ∼25 wt.% after oxidation at 700 °C for 20 min, a full destruction was observed, evidenced by the ∼0 GPa of the tensile strength, compared to ∼1.3 GPa of the Al2O3-coated carbon fiber due to the effective protection from the Al2O3 nano-coating. The formation mechanism of the Al2O3 nano-coating on carbon fiber was schematically established mainly based on the physic-chemical effect in the cathodic plasma arc zone.

  2. Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells

    NARCIS (Netherlands)

    Schmidt, J.; Werner, F.; Veith, B.; Zielke, D.; Bock, R.; Tiba, M.V.; Poodt, P.; Roozeboom, F.; Li, A.; Cuevas, A.; Brendel, R.

    2010-01-01

    We present independently confirmed efficiencies of 21.4% for PERC cells with plasma-assisted atom-ic-layer-deposited (plasma ALD) Al2O3 rear passivation and 20.7% for cells with thermal ALD-Al2O3. Additionally, we evaluate three different industrially relevant techniques for the deposition of

  3. Hot corrosion performance of LVOF sprayed Al2O3–40% TiO2 ...

    Indian Academy of Sciences (India)

    ficients of thermal expansions of the two. ... size 40 mesh just prior to deposition of the coating. Al2O3–. 40% TiO2 ... the laboratory Kanthal wire tube furnace, which was cali- ... formation of TiO2, Al2O3 and Al2Ti7O15 phases in the coat- ing.

  4. Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents

    Science.gov (United States)

    Qi, Yanfei; Zhao, Ce Zhou; Liu, Chenguang; Fang, Yuxiao; He, Jiahuan; Luo, Tian; Yang, Li; Zhao, Chun

    2018-04-01

    In this study, the influence of the Ti and TiN top electrodes on the switching behaviors of the Al2O3/Pt resistive random access memory devices with various compliance currents (CCs, 1-15 mA) has been compared. Based on the similar statistical results of the resistive switching (RS) parameters such as V set/V reset, R HRS/R LRS (measured at 0.10 V) and resistance ratio with various CCs for both devices, the Ti/Al2O3/Pt device differs from the TiN/Al2O3/Pt device mainly in the forming process rather than in the following switching cycles. Apart from the initial isolated state, the Ti/Al2O3/Pt device has the initial intermediate state as well. In addition, its forming voltage is relatively lower. The conduction mechanisms of the ON and OFF state for both devices are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Therefore, with the combined modulations of the CCs and the stop voltages, the TiN/Al2O3/Pt device is more stable for nonvolatile memory applications to further improve the RS performance.

  5. High temperature oxidation-sulfidation behavior of Cr-Al2O3 and Nb-Al2O3 composites densified by spark plasma sintering

    International Nuclear Information System (INIS)

    Saucedo-Acuna, R.A.; Monreal-Romero, H.; Martinez-Villafane, A.; Chacon-Nava, J.G.; Arce-Colunga, U.; Gaona-Tiburcio, C.; De la Torre, S.D.

    2007-01-01

    The high temperature oxidation-sulfidation behavior of Cr-Al 2 O 3 and Nb-Al 2 O 3 composites prepared by mechanical alloying (MA) and spark plasma sintering (SPS) has been studied. These composite powders have a particular metal-ceramic interpenetrating network and excellent mechanical properties. Oxidation-sulfidation tests were carried out at 900 deg. C, in a 2.5%SO 2 + 3.6%O 2 + N 2 (balance) atmosphere for 48 h. The results revealed the influence of the sintering conditions on the specimens corrosion resistance, i.e. the Cr-Al 2 O 3 and Nb-Al 2 O 3 composite sintered at 1310 deg. C/4 min showed better corrosion resistance (lower weight gains) compared with those found for the 1440 deg. C/5 min conditions. For the former composite, a protective Cr 2 O 3 layer immediately forms upon heating, whereas for the later pest disintegration was noted. Thus, under the same sintering conditions the Nb-Al 2 O 3 composites showed the highest weight gains. The oxidation products were investigated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy

  6. All-Aluminum Thin Film Transistor Fabrication at Room Temperature

    Directory of Open Access Journals (Sweden)

    Rihui Yao

    2017-02-01

    Full Text Available Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al2O3 insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO conductive layer, as one AZO/Al2O3 heterojunction unit. The measurements of transmittance electronic microscopy (TEM and X-ray reflectivity (XRR revealed the smooth interfaces between ~2.2-nm-thick Al2O3 layers and ~2.7-nm-thick AZO layers. The devices were entirely composited by aluminiferous materials, that is, their gate and source/drain electrodes were respectively fabricated by aluminum neodymium alloy (Al:Nd and pure Al, with Al2O3/AZO multilayered channel and AlOx:Nd gate dielectric layer. As a result, the all-aluminum TFT with two Al2O3/AZO heterojunction units exhibited a mobility of 2.47 cm2/V·s and an Ion/Ioff ratio of 106. All processes were carried out at room temperature, which created new possibilities for green displays industry by allowing for the devices fabricated on plastic-like substrates or papers, mainly using no toxic/rare materials.

  7. Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells

    KAUST Repository

    Roelofs, Katherine E.

    2013-03-21

    Despite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article, we demonstrate that ultrathin recombination barrier layers of Al2O3 deposited by atomic layer deposition can improve the performance of cadmium sulfide (CdS) quantum dot-sensitized solar cells with spiro-OMeTAD as the solid-state hole transport material. We explored depositing the Al2O3 barrier layers either before or after the QDs, resulting in TiO2/Al2O3/QD and TiO 2/QD/Al2O3 configurations. The effects of barrier layer configuration and thickness were tracked through current-voltage measurements of device performance and transient photovoltage measurements of electron lifetimes. The Al2O3 layers were found to suppress dark current and increase electron lifetimes with increasing Al 2O3 thickness in both configurations. For thin barrier layers, gains in open-circuit voltage and concomitant increases in efficiency were observed, although at greater thicknesses, losses in photocurrent caused net decreases in efficiency. A close comparison of the electron lifetimes in TiO2 in the TiO2/Al2O3/QD and TiO2/QD/Al2O3 configurations suggests that electron transfer from TiO2 to spiro-OMeTAD is a major source of recombination in ss-QDSSCs, though recombination of TiO2 electrons with oxidized QDs can also limit electron lifetimes, particularly if the regeneration of oxidized QDs is hindered by a too-thick coating of the barrier layer. © 2013 American Chemical Society.

  8. Al2O3-coated porous separator for enhanced electrochemical performance of lithium sulfur batteries

    International Nuclear Information System (INIS)

    Zhang, Zhiyong; Lai, Yanqing; Zhang, Zhian; Zhang, Kai; Li, Jie

    2014-01-01

    Graphical abstract: Al2O3-coated separator with developed porous channels is prepared by coating Al2O3 polymer solution on routine separator. The batteries with Al2O3-coated separator exhibited a reversible capacity of as high as 593 mAh g-1 at the rate of 0.2 C after 50th charge/discharge cycle. The enhancement in the electrochemical performance could be attributed to the reduced charge transfer resistance after the introduction of Al2O3 coating layer. Besides, the Al2O3 coating layer, acting as a physical barrier for polysulfides, can effectively prevent polysulfides shuttling between the cathode and the anode. We believe that the Al2O3-coated separator is promising in the lithium sulfur battery applications. - Highlights: • Al 2 O 3 -coated separator is used as the separator of lithium sulfur battery. • The cell with Al 2 O 3 -coated separator exhibits excellent cycling stability and high rate capability. • Al 2 O 3 -coated separator is promising in the lithium sulfur battery applications. - Abstract: In this paper, Al 2 O 3 -coated separator with developed porous channels is prepared to improve the electrochemical performance of lithium sulfur batteries. It is demonstrated that the Al 2 O 3 -coating layer is quite effective in reducing shuttle effect and enhancing the stability of the sulfur electrode. The initial discharge capacity of the cell with Al 2 O 3 -coated separator can reach 967 mAh g −1 at the rate of 0.2 C. After 50th charge/discharge cycle, this cell can also deliver a reversible capacity of as high as 593.4 mAh g −1 . Significantly, the charge-transfer resistance of the electrode tends to be reducing after using Al 2 O 3 -coated separator. The improved cell performance is attributed to the porous architecture of the Al 2 O 3 -coating layer, which serves as an ion-conducting skeleton for trapping and depositing dissolved sulfur-containing active materials, as confirmed by scanning electron microscopy (SEM) and energy-dispersive X

  9. Tribological evaluation for experimental design Al_2O_3 obtained via low pressure injection moulding (LPIM)

    International Nuclear Information System (INIS)

    Dotta, A.L.B.; Costa, C.A.; Farias, M.C.M.; Cunha, M.A da

    2016-01-01

    This work represents the tribological study of Al_2O_3 obtained by LPIM using the experimental design technique to evaluate the interaction of the tribological parameters with the friction and wear. The LPIM process was performed at 90 °C for 24 h. The average friction coefficient for the factorial experimental design varied significantly with the load and the speed when Al_2O_3 was tested with the steel counter body. In general, the wear coefficient was lower for the tribological pair Al_2O_3-steel, in which occurred the formation of an iron oxide tribofilm on the surface. As for the Al_2O_3-Al_2O_3 pair, an intergranular fracture of the surface occurred, in addition to the presence of material adhered on the tracks. (author)

  10. Photochemistry of the α-Al2O3-PETN Interface

    Directory of Open Access Journals (Sweden)

    Roman V. Tsyshevsky

    2016-02-01

    Full Text Available Optical absorption measurements are combined with electronic structure calculations to explore photochemistry of an α-Al2O3-PETN interface formed by a nitroester (pentaerythritol tetranitrate, PETN, C5H8N4O12 and a wide band gap aluminum oxide (α-Al2O3 substrate. The first principles modeling is used to deconstruct and interpret the α-Al2O3-PETN absorption spectrum that has distinct peaks attributed to surface F0-centers and surface—PETN transitions. We predict the low energy α-Al2O3 F0-center—PETN transition, producing the excited triplet state, and α-Al2O3 F0-center—PETN charge transfer, generating the PETN anion radical. This implies that irradiation by commonly used lasers can easily initiate photodecomposition of both excited and charged PETN at the interface. The feasible mechanism of the photodecomposition is proposed.

  11. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    Science.gov (United States)

    van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

    2017-06-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

  12. Fabrication and Characterization of 5 vol.% (Al2O3p + 8 vol.% (Al2O3f/A336 Hybrid Micron and Nano-Composites

    Directory of Open Access Journals (Sweden)

    Ren Luyang

    2017-01-01

    Full Text Available Hybrid composites are fabricated by adding two reinforcements into matrix materials so that the expected excellent properties can be achieved through the combined advantages of short fibres, and different size particles (micron or nano, which provide a high degree of design freedom. In this paper, hybrid preforms were produced with the different size reinforcement of the Al2O3 particles and short fibres. The Al-Si alloy-based hybrid composites reinforced by 5 vol. % Al2O3 particles and 8 vol. % Al2O3 fibres were fabricated by preform-squeezing casting route. The structure and performance of composite materials were studied with Transmission Electron Microscopy (TEM and Scanning Electron Microscopy (SEM. The results show that the reinforcements, both particles and fibres, distribute homogeneously in the matrix materials, and the properties of composites are found to improve in comparison with the matrix Al-Si alloy.

  13. Synthesis of new metal-matrix Al-Al2O3-graphene composite materials

    Science.gov (United States)

    Elshina, L. A.; Muradymov, R. V.; Kvashnichev, A. G.; Vichuzhanin, D. I.; Molchanova, N. G.; Pankratov, A. A.

    2017-08-01

    The mechanism of formation of ceramic microparticles (alumina) and graphene in a molten aluminum matrix is studied as a function of the morphology and type of precursor particles, the temperature, and the gas atmosphere. The influence of the composition of an aluminum composite material (as a function of the concentration and size of reinforcing particles) on its mechanical and corrosion properties, melting temperature, and thermal conductivity is investigated. Hybrid metallic Al-Al2O3-graphene composite materials with up to 10 wt % alumina microparticles and 0.2 wt % graphene films, which are uniformly distributed over the metal volume and are fully wetted with aluminum, are synthesized during the chemical interaction of a salt solution containing yttria and boron carbide with molten aluminum in air. Simultaneous introduction of alumina and graphene into an aluminum matrix makes it possible to produce hybrid metallic composite materials having a unique combination of the following properties: their thermal conductivity is higher than that of aluminum, their hardness and strength are increased by two times, their relative elongation during tension is increased threefold, and their corrosion resistance is higher than that of initial aluminum by a factor of 2.5-4. We are the first to synthesize an in situ hybrid Al-Al2O3-graphene composite material having a unique combination of some characteristics. This material can be recommended as a promising material for a wide circle of electrical applications, including ultrathin wires, and as a structural material for the aerospace industry, the car industry, and the shipbuilding industry.

  14. A comparison of BCF-12 organic scintillators and Al2O3:C crystals for real-time medical dosimetry

    DEFF Research Database (Denmark)

    Beierholm, Anders Ravnsborg; Andersen, Claus Erik; Lindvold, Lars

    2008-01-01

    Radioluminescence (RL) from aluminium oxide (Al2O3:C) crystals and organic scintillators such as the blue-emitting BCF-12 can be used for precise real-time dose rate measurements during radiation therapy of cancer patients. Attaching the dosimeters to thin light-guiding fiber cables enables in vivo...... use. The light signal is detected by a photomultiplier tube (PNIT). Unfortunately Cerenkov light and fluorescence are also generated in the fiber cable itself during irradiation, and this so-called stem effect can be significant compared with the dosimeter signal. In the case of Al2O3:C, this problem...... can be circumvented for pulsed beams due to the long life-time of the main luminescence center. In contrast, chromatic removal seems to be the most effective method for organic scintillators, but is found to yield some experimental complexities. In this paper, we report on dose rate measurements using...

  15. Reactive-environment, hollow cathode sputtering: Basic characteristics and application to Al2O3, doped ZnO, and In2O3:Mo

    International Nuclear Information System (INIS)

    Delahoy, A.E.; Guo, S.Y.; Paduraru, C.; Belkind, A.

    2004-01-01

    A method for thin-film deposition has been studied. The method is based on metal sputtering in a hollow cathode configuration with supply of a reactive gas in the vicinity of the substrate. The working gas and entrained sputtered atoms exit the cathode through an elongated slot. The reactive gas is thereby largely prevented from reaching the target. The basic operation of the cathode was studied using a Cu target and pulsed power excitation. These studies included the dependence of deposition rate on power, pressure, and flow rate, film thickness profiles, and film resistivity as a function of substrate conditions. Modeling was conducted to calculate the gas velocity distribution and pressure inside the cavity. Al 2 O 3 films were prepared in a reactive environment of oxygen by sputtering an Al target. It was demonstrated that only a very small amount of oxygen passing through the cathode will oxidize (poison) the target, whereas large quantities of oxygen supplied externally to the cathode need not affect the target at all. A very stable discharge and ease of Al 2 O 3 formation were realized in this latter mode. The method was applied to the preparation of transparent, conductive films of ZnO doped with either Al or B. High deposition rates were achieved, and, at appropriate oxygen flow rates, low film resistivities. High-mobility In 2 O 3 :Mo transparent conductors were also prepared, with resistivities as low as 1.9x10 -4 Ω cm. Scaling relations for hollow cathodes, and deposition efficiency, and process comparisons between magnetron sputtering and linear, reactive-environment, hollow cathode sputtering are presented

  16. First-principles characterization of a heteroceramic interface: ZrO2(001) deposited on an alpha-Al2O3(1(1)over-bar02) substrate

    DEFF Research Database (Denmark)

    Christensen, Asbjørn; Carter, Emily A.

    2000-01-01

    We have studied an alumina/zirconia interface using the all-electron projector augmented wave formalism within density functional theory. We present the electronic, structural, and energetic properties of the ZrO2(001)/(alpha -Al2O3(1 (1) over bar 02) interface as well as of the free alpha -Al2O3......(1 (1) over bar 02) and ZrO2(001) surfaces. We find that the generalized gradient correction significantly lowers the oxide surface energies, compared to values obtained by the local density approximation. The monoclinic-tetragonal transition in ZrO2(001) thin films is discussed as well as strain...... effects involved in the interface formation. The stoichiometric alumina/zirconia interface is found to be weakly bonded, regardless of the film thickness, and the ZrO2(001)/alpha -Al2O3(1 (1) over bar 02) interface has a rather epitaxial character, due to a low lattice mismatch of similar to4%. The impact...

  17. In situ formation of CA6 platelets in Al2O3 and Al2O3/ZrO2 matrices

    OpenAIRE

    Belmonte , M.; SÁnchez-Herencia , A.; Moreno , R.; Miranzo , P.; Moya , J.; Tomsia , A.

    1993-01-01

    Al2O3 and Al2O3/ZrO2 compacts containing CaO as a dopant have been sintered under different conditions and atmospheres: air, high vacuum (> 10-6torr). SEM observations have been made on the polished surfaces of sintered and also of annealed samples. Only after the annealing treatment in air at temperatures ranging from 1400° to 1 500°C, a massive formation of CA6 platelets was detected in samples sintered in low oxygen partial pressure atmospheres.ln order to clarify the mechanism of formatio...

  18. Thermal expansion and thermal conductivity characteristics of Cu–Al2O3 nanocomposites

    International Nuclear Information System (INIS)

    Fathy, A.; El-Kady, Omyma

    2013-01-01

    Highlights: ► The copper–alumina composites were prepared by powder metallurgy (P/M) method with nano-Cu/Al 2 O 3 powders. ► The Al 2 O 3 content was added by 2.5, 7.5 and 12.5 wt.% to the Cu matrix to detect its effect on thermal conductivity and thermal expansion behavior of the resultant Cu/Al 2 O 3 nanocomposites. ► The results showed that alumina nanoparticles (30 nm) were distributed in the copper matrix in a homogeneous manner. ► The measured thermal conductivity for the Cu–Al 2 O 3 nanocomposites decreased from 384 to 78.1 W/m K with increasing Al 2 O 3 content from 0 to 12.5 wt.%. ► Accordingly, the coefficient of thermal expansion (CTE) was tailored from 33 × 10 −6 to 17.74 × 10 −6 /K, which is compatible with the CTE of semiconductors in electronic packaging applications. - Abstract: Copper–alumina composites were prepared by powder metallurgy (P/M) technology. Nano-Cu/Al 2 O 3 powders, was deoxidized from CuO/Al 2 O 3 powders which synthesized by thermochemical technique by addition of Cu powder to an aqueous solution of aluminum nitrate. The Al 2 O 3 content was added by 2.5, 7.5 and 12.5 wt.% to the Cu matrix to detect its effect on thermal conductivity and thermal expansion behavior of the resultant Cu/Al 2 O 3 nanocomposites. The results showed that alumina nanoparticles (30 nm) were distributed in the copper matrix in a homogeneous manner. The measured thermal conductivity for the Cu–Al 2 O 3 nanocomposites decreased from 384 to 78.1 W/m K with increasing Al 2 O 3 content from 0 to 12.5 wt.%. The large variation in the thermal conductivities can be related to the microstructural characteristics of the interface between Al 2 O 3 and the Cu-matrix. Accordingly, the coefficient of thermal expansion (CTE) was tailored from 33 × 10 −6 to 17.74 × 10 −6 /K, which is compatible with the CTE of semiconductors in electronic packaging applications. The reduction of thermal conductivity and coefficient of thermal expansion were

  19. Fabrication of hierarchical porous ZnO-Al2O3 microspheres with enhanced adsorption performance

    Science.gov (United States)

    Lei, Chunsheng; Pi, Meng; Xu, Difa; Jiang, Chuanjia; Cheng, Bei

    2017-12-01

    Hierarchical porous ZnO-Al2O3 microspheres were fabricated through a simple hydrothermal route. The as-prepared hierarchical porous ZnO-Al2O3 composites were utilized as adsorbents to remove organic dye Congo red (CR) from water. The ZnO-Al2O3 composites had morphology of microspheres with diameters in the range of 12-16 μm, which were assembled by nanosheets with thicknesses of approximately 60 nm. The adsorption kinetics of CR onto the ZnO-Al2O3 composites was properly fitted by the pseudo-second-order kinetic model. The equilibrium adsorption data were perfectly described by the Langmuir isotherm and had a maximum adsorption capacity that reached 397 mg/g, which was significantly higher than the value of the pure alumina (Al2O3) and zinc oxide (ZnO) samples. The superior CR removal efficiency of the ZnO-Al2O3 composites was attributed to its well-developed hierarchical porous structures and larger specific surface area (201 m2/g), which were conducive to the diffusion and adsorption of CR molecules. Moreover, the regeneration study reveals that the ZnO-Al2O3 composites have suitable stability and reusability. The results also indicate that the as-prepared sample can act as a highly effective adsorbent in anionic dye removal from wastewater.

  20. Interface behaviour of Al2O3/Ti joints produced by liquid state bonding

    International Nuclear Information System (INIS)

    Lemus R, J.; Guevara L, A. O.; Zarate M, J.

    2014-08-01

    The main objective of this work was to determine various aspects during brazing of Al 2 O 3 samples to commercially titanium alloy grade 4 with biocompatibility properties, using a Au-foil as joining element. Al 2 O 3 ceramic was previously produced by sintering of powder cylindrical shape at 1550 grades C for 120 minutes. Previously to joining experiments, the surface of Al 2 O 3 samples were coating, by chemical vapor depositions (CVD) process, with a Mo layer of 2 and 4 μm thick and then stacked together with the Ti samples. Joining experiments were carried out on Al 2 O 3 -Mo/Au/Ti combinations at temperature of 1100 grades C using different holding times under vacuum atmosphere. The experimental results show a successful joining Mo-Al 2 O 3 to Ti. Analysis by scanning electron microscopy (Sem) revealed that joining of Al 2 O 3 to metal occurred by the formation of a homogeneous diffusion zone with no interfacial cracking or porosity at the interface. Results by electron probe micro analysis (EPMA) of Al 2 O 3 -Mo/Au/Ti combinations revealed that Mo traveled inside the joining elements and remained as solid solutions, however during cooling process Mo had a tendency to stay as a precipitate phase and atomic distributions of elements show a concentration line of Mo inside the joining element Au. On the other hand, well interaction of Ti with Au form different phases; like Ti 3 Au and Ti Au. (author)

  1. Preparation of mullite whiskers reinforced SiC/Al2O3 composites by microwave sintering

    Directory of Open Access Journals (Sweden)

    Wei Li

    2016-12-01

    Full Text Available Mullite whiskers reinforced SiC/Al2O3 composites were prepared by microwave sintering in a microwave chamber with TE666 resonant mode. Original SiC particles were coated with SiO2 using sol-gel processing and mixed with Al2O3 particles. Mullite was formed in the reaction between SiO2 and Al2O3. The isostatically pressed cylindrical pellets were sintered from 1350 °C to 1600 °C for 30 min. Physical and chemical responses were investigated by detecting changes in reflected power during the microwave sintering process. XRD was carried out to characterize the samples and showed that mullite could be formed at 1200 °C. Bridging of mullite whiskers between Al2O3 and SiC particles was observed by SEM and is due to a so-called local hot spot effect, which was the unique feature for microwave sintering. The optimized microwave sintering temperature was 1500 °C corresponding to the maximum amount of mullite whiskers within SiC/Al2O3 composites. The high electro-magnetic field enhanced the decomposition of mullite at higher temperatures above 1550 °C. The mechanical properties of mullite whiskers reinforced SiC/Al2O3 composites are much better than the SiC/Al2O3 composites without mullite whiskers.

  2. Influence of Al2O3 reinforcement on precipitation kinetic of Cu–Cr nanocomposite

    International Nuclear Information System (INIS)

    Sheibani, S.; Ataie, A.; Heshmati-Manesh, S.; Caballero, A.; Criado, J.M.

    2011-01-01

    Highlights: ► Cr precipitation in Cu-1 wt.% Cr solid solution is based on nucleation and growth models. ► The overall ageing process is accelerated by the presence of Al 2 O 3 reinforcement. ► Al 2 O 3 –Cu interfaces act as primary nucleation sites. ► Structural defects act as secondary nucleation sites. - Abstract: In this paper, the kinetic of precipitation process in mechanically alloyed Cu-1 wt.% Cr and Cu-1 wt.% Cr/3 wt.% Al 2 O 3 solid solution was compared using differential scanning calorimetry (DSC), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The ageing kinetics in Cu–Cr and Cu–Cr/Al 2 O 3 can be described using Johnson–Mehl–Avrami (JMA) and Sestak–Berggren (SB) models, respectively. These different behaviors have been discussed in details. It was found that in presence of Al 2 O 3 reinforcement, the ageing activation energy is decreased and the overall ageing process is accelerated. This behavior is probably due to higher dislocation density previously obtained during ball milling and Al 2 O 3 –Cu interface. TEM observations confirm that Al 2 O 3 –Cu interface and structural defects act as a primary and secondary nucleation sites, respectively.

  3. Phase relations in the SiC-Al2O3-Pr2O3 system

    International Nuclear Information System (INIS)

    Pan, W.; Wu, L.; Jiang, Y.; Huang, Z.

    2016-01-01

    Phase relations in the Si-Al-Pr-O-C system, including the SiC-Al 2 O 3 -Pr 2 O 3 , the Al 2 O 3 -Pr 2 O 3 -SiO 2 and the SiC-Al 2 O 3 -Pr 2 O 3 -SiO 2 subsystems, were determined by means of XRD phase analysis of solid-state-reacted samples fabricated by using SiC, Al 2 O 3 , Pr 2 O 3 and SiO 2 powders as the starting materials. Subsolidus phase diagrams of the systems were presented. Two Pr-aluminates, namely PrAlO 3 (PrAP) and PrAl 11 O 18 (β(Pr) β-Al 2 O 3 type) were formed in the SiC-Al 2 O 3 -Pr 2 O 3 system. SiC was compatible with both of them. Pr-silicates of Pr 2 SiO 5 , Pr 2 Si 2 O 7 and Pr 9.33 Si 6 O 26 (H(Pr) apatite type) were formed owing to presence of SiO 2 impurity in the SiC powder. The presence of the SiO 2 extended the ternary system of SiC-Al 2 O 3 -Pr 2 O 3 into a quaternary system of SiC-Al 2 O 3 -SiO 2 -Pr 2 O 3 (Si-Al-Pr-O-C). SiC was compatible with Al 2 O 3 , Pr 2 O 3 and the Pr-silicates. The effect of SiO 2 on the phase relations and liquid phase sintering of SiC ceramics was discussed.

  4. Low temperature route synthesis of SiC–Al2O3 hetero-structural nanofibers

    International Nuclear Information System (INIS)

    Dai, Xiao; Wang, Hao; Cao, Fengfeng; Yi, Qinghua; Cong, Shan; Wang, Yun; Song, Pingyuan; Zhai, Pengfei; Zou, Guifu; Dong, Chao

    2014-01-01

    SiC–Al 2 O 3 hetero-structural nanofibers have been synthesized by the chemical solution approach at 200 ° C. The diameters of nanofibers are in the range of 60–100 nm while the lengths are from tens of micrometers to hundreds of micrometers. The microstructural analysis shows that the fibers possess a like-epitaxial relationship between (104) of hexagonal Al 2 O 3 and (111) of cubic SiC. Additionally, the optical investigation of the nanofibers suggests there are some defects in the low annealing temperature synthesized SiC–Al 2 O 3 nanofibers. (paper)

  5. Al2 O3:Cr,Ni: a possible thermoluminescent dosemeter

    International Nuclear Information System (INIS)

    Mariani R, Francisco; Roman B, Alvaro; Saavedra S, Renato; Ibarra S, Angel

    1996-01-01

    Results from a study on the thermoluminescent (Tl) emission from Al 2 O 3 :Cr,Ni are presented. The measurements were obtained for evaluation of the Al 2 O 3 :Cr,Ni dosimetric properties. Different crystal batches were exposed to two kind of ionizing radiation (X-ray and β - ). The Tl spectrum has a main peak with high thermal and optical stability, deviating from linearity for doses lower than 3.6 Gy. Furthermore, this material shows advantages (thermal resistance, reusability, multiple heating cycles) compared to TLD-100. Measured Al 2 O 3 :Cr,Ni properties indicate that it could be used as a dosemeter. (author)

  6. High energy transmission of Al2O3 doped with light transition metals

    KAUST Repository

    Schuster, Cosima

    2012-01-31

    The transmission of transparent colored ceramics based on Al2O3doped with light transition metals is measured in the visible and infrared range. To clarify the role of the dopands we perform ab initiocalculations. We discuss the electronic structure and present optical spectra obtained in the independent particle approximation. We argue that the gross spectral features of Co- and Ni-doped Al2O3 samples are described by our model, while the validity of the approach is limited for Cr-doped Al2O3.

  7. High energy transmission of Al2O3 doped with light transition metals

    KAUST Repository

    Schuster, Cosima; Klimke, J.; Schwingenschlö gl, Udo

    2012-01-01

    The transmission of transparent colored ceramics based on Al2O3doped with light transition metals is measured in the visible and infrared range. To clarify the role of the dopands we perform ab initiocalculations. We discuss the electronic structure and present optical spectra obtained in the independent particle approximation. We argue that the gross spectral features of Co- and Ni-doped Al2O3 samples are described by our model, while the validity of the approach is limited for Cr-doped Al2O3.

  8. Electrical resistivity of ferrimagnetic magnetite thin film

    International Nuclear Information System (INIS)

    Varshney, Dinesh; Yogi, A.; Kaurav, N.; Gupta, R.P.; Phase, D.M.

    2006-01-01

    We have grown Fe 3 O 4 (III) epitaxial film on Al 2 O 3 (0001) substrate by pulsed laser deposition, with thickness of 130 nm. X-ray diffraction studies of magnetite show the spinel cubic structure of film with preferential (III) orientation. The electrical resistivity measurement demonstrates that the properties of thin film of magnetite are basically similar to those of bulk magnetite and clearly shows semiconductor-insulator transition at Verwey transition temperature (≅140 K). We have found higher Verwey transition temperature when compared with earlier reports on similar type of system. Possible causes for increase in transition temperature are discussed. (author)

  9. Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN

    Science.gov (United States)

    Chan, Silvia H.; Bisi, Davide; Liu, Xiang; Yeluri, Ramya; Tahhan, Maher; Keller, Stacia; DenBaars, Steven P.; Meneghini, Matteo; Mishra, Umesh K.

    2017-11-01

    This paper investigates the effects of the oxygen precursor flow supplied during metalorganic chemical vapor deposition (MOCVD) of Al2O3 films on the forward bias behavior of Al2O3/GaN metal-oxide-semiconductor capacitors. The low oxygen flow (100 sccm) delivered during the in situ growth of Al2O3 on GaN resulted in films that exhibited a stable capacitance under forward stress, a lower density of stress-generated negative fixed charges, and a higher dielectric breakdown strength compared to Al2O3 films grown under high oxygen flow (480 sccm). The low oxygen grown Al2O3 dielectrics exhibited lower gate current transients in stress/recovery measurements, providing evidence of a reduced density of trap states near the GaN conduction band and an enhanced robustness under accumulated gate stress. This work reveals oxygen flow variance in MOCVD to be a strategy for controlling the dielectric properties and performance.

  10. Pt–Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores

    International Nuclear Information System (INIS)

    Pardon, Gaspard; Gatty, Hithesh K; Stemme, Göran; Wijngaart, Wouter van der; Roxhed, Niclas

    2013-01-01

    Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al 2 O 3 ) on Pt in nanopores to form a metal–insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al 2 O 3 layer on such a Pt film forms a metal–insulator–electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 μm thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al 2 O 3 using ALD. (paper)

  11. Minimizing of the boundary friction coefficient in automotive engines using Al2O3 and TiO2 nanoparticles

    International Nuclear Information System (INIS)

    Ali, Mohamed Kamal Ahmed; Xianjun, Hou; Elagouz, Ahmed; Essa, F.A.; Abdelkareem, Mohamed A. A.

    2016-01-01

    Minimizing of the boundary friction coefficient is critical for engine efficiency improvement. It is known that the tribological behavior has a major role in controlling the performance of automotive engines in terms of the fuel consumption. The purpose of this research is an experimental study to minimize the boundary friction coefficient via nano-lubricant additives. The tribological characteristics of Al 2 O 3 and TiO 2 nano-lubricants were evaluated under reciprocating test conditions to simulate a piston ring/cylinder liner interface in automotive engines. The nanoparticles were suspended in a commercially available lubricant in a concentration of 0.25 wt.% to formulate the nano-lubricants. The Al 2 O 3 and TiO 2 nanoparticles had sizes of 8–12 and 10 nm, respectively. The experimental results have shown that the boundary friction coefficient reduced by 35–51% near the top and bottom dead center of the stroke (TDC and BDC) for the Al 2 O 3 and TiO 2 nano-lubricants, respectively. The anti-wear mechanism was generated via the formation of protective films on the worn surfaces of the ring and liner. These results will be a promising approach for improving fuel economy in automotive.

  12. Pt-Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores

    Science.gov (United States)

    Pardon, Gaspard; Gatty, Hithesh K.; Stemme, Göran; van der Wijngaart, Wouter; Roxhed, Niclas

    2013-01-01

    Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al2O3) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al2O3 layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 μm thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al2O3 using ALD.

  13. Friction and wear of Synfluo 180XF wax and nano-Al2O3 filled Nomex fabric composites

    International Nuclear Information System (INIS)

    Su Fenghua; Zhang Zhaozhu; Wang Kun; Liu Weimin

    2006-01-01

    Nomex fabric composites filled with the particulates of Synfluo 180XF wax (SFW) and nano-Al 2 O 3 was prepared by dip-coating of Nomex fabric in a phenolic resin containing particulates to be incorporated and the successive curing. The friction and wear performance of the pure and filled Nomex fabric composites sliding against AISI-1045 steel in a pin-on-disk configuration were evaluated on a Xuanwu-III high temperature friction and wear tester. The microstructure of the composites, and the morphologies of the worn surfaces and the morphologies of counterpart steel pins were analyzed by means of scanning electron microscopy. And the elemental plane distribution of Al on the cross-section of the Nomex fabric composites filled with nano-Al 2 O 3 was analyzed with an energy dispersive X-ray analyzer (EDAX). The results showed that the addition of Synfluo 180XF wax in composites have the potential to increase wear resistance and friction reduction of Nomex fabric composites, and the addition of the nano-Al 2 O 3 with the optimum mass fraction in composites can improve the anti-wear ability of the composites. Besides the self-properties of the filler, the character of the microstructure of the Nomex fabric composites filled with different particles, coupled with the character of the transfer film, largely accounts for the improved anti-wear and friction-reducing abilities of the filled Nomex fabric composites as compared with the unfilled one

  14. Ta2O5/ Al2O3/ SiO2 - antireflective coating for non-planar optical surfaces by atomic layer deposition

    Science.gov (United States)

    Pfeiffer, K.; Schulz, U.; Tünnermann, A.; Szeghalmi, A.

    2017-02-01

    Antireflective coatings are essential to improve transmittance of optical elements. Most research and development of AR coatings has been reported on a wide variety of plane optical surfaces; however, antireflection is also necessary on nonplanar optical surfaces. Physical vapor deposition (PVD), a common method for optical coatings, often results in thickness gradients on strongly curved surfaces, leading to a failure of the desired optical function. In this work, optical thin films of tantalum pentoxide, aluminum oxide and silicon dioxide were prepared by atomic layer deposition (ALD), which is based on self-limiting surface reactions. The results demonstrate that ALD optical layers can be deposited on both vertical and horizontal substrate surfaces with uniform thicknesses and the same optical properties. A Ta2O5/Al2O3/ SiO2 multilayer AR coating (400-700 nm) was successfully applied to a curved aspheric glass lens with a diameter of 50 mm and a center thickness of 25 mm.

  15. The influence of thermal annealing on the characteristics of different AL2O3 thermoluminescence dosimeters

    International Nuclear Information System (INIS)

    Ranogajec-Komor, M.; Vincekovic, M.; Knezevic, Z.; Miljanic, S.

    2002-01-01

    The manufacturers of TL detectors usually recommend the annealing temperature and time, however they do not give instructions about the heating and cooling rates. From the aspect of practical routine work, every laboratory has to find the optimum heating and cooling method. In this work the influence of various parameters of annealing on the properties of TL dosimeters (sensitivity, reproducibility, the shape of the glow curve) was investigated. Various Al 2 O 3 :dosimeters were used. The TL dosimeters based on Al 2 O 3 can be used in different dose ranges depending on the crystal structure of the dosimeter material as well as the kind and concentration of the activator. In this work Al 2 O 3 :C 4 and Al 2 O 3 :Mg,Y with 0.5% and 1% of activator were investigated

  16. Al2O3 coating fabricated on titanium by cathodic microarc electrodeposition

    International Nuclear Information System (INIS)

    Jin Qian; Xue Wenbin; Li Xijin; Zhu Qingzhen; Wu Xiaoling

    2009-01-01

    A Al 2 O 3 coating was prepared on titanium substrate by cathodic microarc electrodeposition method in Al(NO 3 ) 3 ethanol solution. The coating thickness was about 80 μm when a 400 V cathodic potential was applied. The morphology and phase constituent of the Al 2 O 3 coating were investigated by scanning electron microscope (SEM) and X-ray diffraction (XRD). The isothermal oxidation at 700 deg. C and electrochemical corrosion behavior of the coated titanium were analyzed. The coating was composed of γ-Al 2 O 3 and little α-Al 2 O 3 phases. The oxidation resistance of the titanium subjected to cathodic microarc treatment was obviously improved. The polarization test indicated that the coated titanium has better corrosion resistance.

  17. Selective hydrogenation of maleic anhydride over Pd/Al2O3 ...

    Indian Academy of Sciences (India)

    Keywords. Pd/Al2O3 catalyst; maleic anhydride; selective hydrogenation; succinic anhydride. 1. Introduction ... attracted a significant amount of attention because the majority of its ... added, and the colour of the resulting mixture turned brown.

  18. MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application

    International Nuclear Information System (INIS)

    Zhou Jiahui; Xu Wenjun; Li Qi; Li Simin; He Zhiyi; Li Haiou; Chang Hudong; Liu Honggang; Liu Guiming

    2015-01-01

    The impact of various thicknesses of Al 2 O 3 metal—insulator—metal (MIM) capacitors on direct current and radio frequency (RF) characteristics is investigated. For 20 nm Al 2 O 3 , the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm 2 and acceptable voltage coefficients of capacitance of 681 ppm/V 2 at 1 MHz. An outstanding VCC-α of 74 ppm/V 2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al 2 O 3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al 2 O 3 could be very promising candidates for GaAs RFIC applications. (paper)

  19. Thermal shock fatigue behavior of TiC/Al2O3 composite ceramics

    Institute of Scientific and Technical Information of China (English)

    SI Tingzhi; LIU Ning; ZHANG Qingan; YOU Xianqing

    2008-01-01

    The thermal shock fatigue behaviors of pure hot-pressed alumina and 30 wt. % TiC/Al2O3 composites were studied. The effect of TiC and Al2O3 starting particle size on the mechanical properties of the composites was discussed. Indentation-quench test was conducted to evaluate the effect of thermal fatigue temperature difference (ΔT) and number of thermal cycles (N) on fatigue crack growth (Δα). The mechanical properties and thermal fatigue resistance of TiC/Al2O3 composites are remarkably improved by the addition of TiC. The thermal shock fatigue of monolithic alumina and TiC/Al2O3 composites is due to a "true" cycling effect (thermal fatigue). Crack deflection and bridging are the predominant reasons for the improvement of thermal shock fatigue resistance of the composites.

  20. Dispersion of nano-nickel into γ-Al2O3 studied by positron

    International Nuclear Information System (INIS)

    Jun Zhu; Wang, S.J.; Luo, X.H.

    2003-01-01

    The positron annihilation lifetime spectra were measured as a function of the content of the nano-nickel, of temperature, as well as of the heating time for the supported nano-nickel catalyst that was prepared by mechanical mixture nano-metal nickel particles with gamma-alumina (γ-Al 2 O 3 ). The lifetime spectra were well resolved into four lifetime components. The longest lifetime τ 4 was assigned to ortho-positronium annihilating in the secondary pore of the γ-Al 2 O 3 . The results showed that part of the nano-nickel had entered into γ-Al 2 O 3 by thermal diffusion at heating above 200 deg. C and had interacted with the face of the γ-Al 2 O 3 , but the length of diffusion is not very large

  1. Dispersion of nano-nickel into γ-Al 2O 3 studied by positron

    Science.gov (United States)

    Jun, Zhu; Wang, S. J.; Luo, X. H.

    2003-10-01

    The positron annihilation lifetime spectra were measured as a function of the content of the nano-nickel, of temperature, as well as of the heating time for the supported nano-nickel catalyst that was prepared by mechanical mixture nano-metal nickel particles with gamma-alumina ( γ-Al 2O 3). The lifetime spectra were well resolved into four lifetime components. The longest lifetime τ4 was assigned to ortho-positronium annihilating in the secondary pore of the γ-Al 2O 3. The results showed that part of the nano-nickel had entered into γ-Al 2O 3 by thermal diffusion at heating above 200°C and had interacted with the face of the γ-Al 2O 3, but the length of diffusion is not very large.

  2. Preparation and characterization of DLC/SiO2/Al2O3 nanofiltration ...

    Indian Academy of Sciences (India)

    MS received 12 July 2012; revised 27 September 2012 ... support were deposited using plasma-enhanced chemical vapour deposi- ... the nanofiltration membrane with DLC/SiO2/Al2O3 were observed at various annealing temperatures.

  3. Potential of HfN, ZrN, and TiH as hot carrier absorber and Al2O3/Ge quantum well/Al2O3 and Al2O3/PbS quantum dots/Al2O3 as energy selective contacts

    Science.gov (United States)

    Shrestha, Santosh; Chung, Simon; Liao, Yuanxun; Wang, Pei; Cao, Wenkai; Wen, Xiaoming; Gupta, Neeti; Conibeer, Gavin

    2017-08-01

    The hot carrier (HC) solar cell is one of the most promising advanced photovoltaic concepts. It aims to minimise two major losses in single junction solar cells due to sub-band gap loss and thermalisation of above band gap photons by using a small bandgap absorber, and, importantly, collecting the photo-generated carriers before they thermalise. In this paper we will present recent development of the two critical components of the HC solar cell, i.e., the absorber and energy selective contacts (ESCs). For absorber, fabrication and carrier cooling rates in potential bulk materials — hafnium nitride, zirconium nitride, and titanium hydride are presented. Results of ESCs employing double barrier resonant tunneling structures Al2O3/Ge quantum well (QW)/Al2O3 and Al2O3/PbS quantum dots (QDs)/Al2O3 are also presented. These results are expected to guide further development of practical HC solar cell devices.

  4. Polarization Behavior of Squeeze Cast Al2O3 Fiber Reinforced Aluminum Matrix Composites

    International Nuclear Information System (INIS)

    Ham, S. H.; Kang, Y. C.; Cho, K. M.; Park, I. M.

    1992-01-01

    Electrochemical polarization behavior of squeeze cast Al 2 O 3 short fiber reinforced Al alloy matrix composites was investigated for the basic understanding of the corrosion properties of the composites. The composites were fabricated with variations of fiber volume fraction and matrix alloys. It was found that the reinforced composites are more susceptible to corrosion attack than the unreinforced matrix alloys in general. Corrosion resistance shows decreasing tendency with increasing Al 2 O 3 fiber volume fraction in AC8A matrix. Effect of the matrix alloys revealed that the AC8A Al matrix composite is less susceptible to corrosion attack than the 2024 and 7075 Al matrix composites. Effect of plastic deformation on electrochemical polarization behavior of the squeeze cast Al/Al 2 O 3 composites was examined after extrusion of AC8A-10v/o Al 2 O 3 . Result shows that corrosion resistance is deteriorated after plastic deformation

  5. Effect of particle shape on thermal conductivity of Al2O3 nanofluids

    International Nuclear Information System (INIS)

    Kim, Hyun Jin; Lee, Seung Hyun; Kwon, Hey Lim; Jang, Seok Pil; Lim, Hyung Mi

    2009-01-01

    In this paper, thermal conductivities of water-based Al 2 O 3 nanofluids with brick, blade, platelet and rod type nanoparticle are measured by transient hot wire method to investigate the effect of nanoparticle shape on thermal conductivity. Water-based Al 2 O 3 nanofluids are prepared by two-step method and that of volume fraction is 3%. Temperature dependency of thermal conductivity of water-based Al 2 O 3 nanofluids is also studied by measuring of thermal conductivity from 22 .deg. C to 42 .deg. C. TEM micrograph, zeta potential and BET are measured to investigate suspension and disperse stability of water-based Al 2 O 3 nanofluids. Furthermore, Experimental results are compared with theoretical models such as Hamilton-Crosser model considering the shape effects on thermal conductivity.

  6. Physics and Technology of Transparent Ceramic Armor: Sintered Al2O3 vs Cubic Materials

    National Research Council Canada - National Science Library

    Krell, Andreas; Hutzler, Thomas; Klimke, Jens

    2006-01-01

    Sintered sub-micrometer alumina (alpha-Al2O3) is the hardest transparent armor. However, its trigonal structure gives rise to a strong thickness effect that makes thicker components translucent. Cubic ceramics (no birefringence...

  7. Synthesis of MgO nanoparticle loaded mesoporous Al2O3 and its defluoridation study

    International Nuclear Information System (INIS)

    Dayananda, Desagani; Sarva, Venkateswara R.; Prasad, Sivankutty V.; Arunachalam, Jayaraman; Parameswaran, Padmanabhan; Ghosh, Narendra N.

    2015-01-01

    Highlights: • Simple and cost effective preparation of MgO nanoparticles loaded mesoporous Al 2 O 3 . • Adsorbents possess high surface area and mesoporous structure. • Higher fluoride removal capacity of MgO loaded Al 2 O 3 than that of pure Al 2 O 3 . • Faster fluoride adsorption kinetics of MgO loaded Al 2 O 3 from water. - Abstract: MgO nanoparticle loaded mesoporous alumina has been synthesized using a simple aqueous solution based cost effective method for removal of fluoride from water. Wide angle powder X-ray diffraction, nitrogen adsorption desorption analysis, transmission electron microscopy techniques and energy dispersive X-ray spectroscopy were used to characterize the synthesized adsorbents. Synthesized adsorbents possess high surface area with mesoporous structure. The adsorbents have been thoroughly investigated for the adsorption of F − using batch adsorption method. MgO nanoparticle loading on mesoporous Al 2 O 3 enhances the F − adsorption capacity of Al 2 O 3 from 56% to 90% (initial F − concentration = 10 mg L −1 ). Kinetic study revealed that adsorption kinetics follows the pseudo-second order model, suggesting the chemisorption mechanism. The F − adsorption isotherm data was explained by both Langmuir and Freundlich model. The maximum adsorption capacity of 40MgO@Al 2 O 3 was 37.35 mg g −1 . It was also observed that, when the solutions having F − concentration of 5 mg L −1 and 10 mg L −1 was treated with 40MgO@Al 2 O 3 , the F − concentration in treated water became <1 mg L −1 , which is well below the recommendation of WHO

  8. Characterization of γ- Al2O3 nanopowders synthesized by Co-precipitation method

    International Nuclear Information System (INIS)

    Jbara, Ahmed S.; Othaman, Zulkafli; Ati, Ali A.; Saeed, M.A.

    2017-01-01

    Co-precipitation technique has been used to synthesize gamma-Al 2 O 3 (γ-Al 2 O 3 ) nanopowders under annealing temperature effect. The crystalline phase and purity for the prepared powder were characterized by different spectroscopy techniques. XRD analysis confirms the gamma phase of alumina nanopowders with particle diameter ranging from 6 to 24 nm, which confirms the quantum dots formation, which is also supported by the BET measurement. The surface area of the prepared nanopowders is in the range of 109–367 m 2 /g. Morphology analysis indicates that γ-Al 2 O 3 nanopowders are consisted of grains almost spherical in shape. Some agglomeration of nanoparticles occurs, which become more regular hexagonal shaped with the increasing annealing temperature. The small nanoparticles size and the high surface area from a simple procedure for preparing γ-Al 2 O 3 may make it more suitable for use as an adsorbent for malachite green. - Highlights: • Co-precipitation technique is used to synthesize gamma- Al 2 O 3 nanopowders. • Pure gamma- Al 2 O 3 phase was obtained having maximum nanoparticle size is 24 nm. • The quantum dots were formed inside powder. • High surface area of nanopowders at the low annealing temperature. • Increasing annealing temperature causes the hexagonal agglomeration shape.

  9. Synthesis, characterization and thermal properties of paraffin microcapsules modified with nano-Al2O3

    International Nuclear Information System (INIS)

    Jiang, Xiang; Luo, Ruilian; Peng, Feifei; Fang, Yutang; Akiyama, Tomohiro; Wang, Shuangfeng

    2015-01-01

    Highlights: • Novel MEPCM modified with nano-Al 2 O 3 was prepared via emulsion polymerization. • The paraffin microcapsules presented a well-defined microstructure. • The composite achieved high encapsulation efficiency. • The thermal conductivity of MEPCM was enhanced due to the nano-Al 2 O 3 particles. - Abstract: A sort of new microencapsulated phase change materials (MEPCM) based on paraffin wax core and poly(methyl methacrylate-co-methyl acrylate) shell with nano alumina (nano-Al 2 O 3 ) inlay was synthesized through emulsion polymerization. Various techniques were used to characterize the as-prepared products so as to investigate the effect of nano-Al 2 O 3 on morphology and thermal performance, including scanning electron microscopy (SEM), differential scanning calorimetry (DSC), thermogravimetric analysis (TGA) and thermal conductivity measurement. The results showed that the products achieved the best performance with 16% (monomer mass) nano-Al 2 O 3 added under the optimal preparation conditions. The DSC results indicated that the phase change temperature of the composite exhibited appropriate phase change temperature and achieved high encapsulation efficiency. The thermal conductivity of the paraffin microcapsules is also significantly improved owing to the presence of high thermal conductive nano-Al 2 O 3 . This synthetic technique can be a perspective way to prepare the MEPCM with enhanced thermal transfer and phase change properties for potential applications to energy-saving building materials

  10. Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

  11. In situ formation of CA6 platelets in Al2O3 and Al2O3/ZrO2 matrices

    International Nuclear Information System (INIS)

    Belmonte, M.; Sanchez-Herencia, A.J.; Moreno, R.; Miranzo, P.; Moya, J.S.; Tomsia, A.P.

    1993-01-01

    Al 2 O 3 and Al 2 O 3 /ZrO 2 compacts containing CaO as a dopant have been sintered under different conditions and atmospheres: air, high vacuum (> 10 -6 torr). SEM observations have been made on the polished surfaces of sintered and also of annealed samples. Only after the annealing treatment in air at temperatures ranging from 1400 to 1500 C, a massive formation of CA 6 platelets was detected in samples sintered in low oxygen partial pressure atmospheres. In order to clarify the mechanism of formation of this secondary phase at the grain boundaries, CaO has been introduced in the form of either plaster of Paris (to reproduce a possible contamination provided by the molds in slip casting) or CaCO 3 . The obtained results indicate the important role of the firing atmosphere on the precipitation of secondary phases at grain boundary. (orig.)

  12. Inkjet-printed thin film radio-frequency capacitors based on sol-gel derived alumina dielectric ink

    KAUST Repository

    McKerricher, Garret

    2017-05-03

    There has been significant interest in printing radio frequency passives, however the dissipation factor of printed dielectric materials has limited the quality factor achievable. Al2O3 is one of the best and widely implemented dielectrics for RF passive electronics. The ability to spatially pattern high quality Al2O3 thin films using, for example, inkjet printing would tremendously simplify the incumbent fabrication processes – significantly reducing cost and allowing for the development of large area electronics. To-date, particle based Al2O3 inks have been explored as dielectrics, although several drawbacks including nozzle clogging and grain boundary formation in the films hinder progress. In this work, a particle free Al2O3 ink is developed and demonstrated in RF capacitors. Fluid and jetting properties are explored, along with control of ink spreading and coffee ring suppression. The liquid ink is heated to 400 °C decomposing to smooth Al2O3 films ~120 nm thick, with roughness of <2 nm. Metal-insulator-metal capacitors, show high capacitance density >450 pF/mm2, and quality factors of ~200. The devices have high break down voltages, >25 V, with extremely low leakage currents, <2×10−9 A/cm2 at 1 MV/cm. The capacitors compare well with similar Al2O3 devices fabricated by atomic layer deposition.

  13. The mechanical properties of a nanocrystalline Al2O3/a-Al2O3 composite coating measured by nanoindentation and Brillouin spectroscopy

    International Nuclear Information System (INIS)

    García Ferré, Francisco; Bertarelli, Emanuele; Chiodoni, Angelica; Carnelli, Davide; Gastaldi, Dario; Vena, Pasquale; Beghi, Marco G.; Di Fonzo, Fabio

    2013-01-01

    In this work, ellipsometry, Brillouin spectroscopy and nanoindentation are combined to assess the mechanical properties of a nanocrystalline Al 2 O 3 /a-Al 2 O 3 composite coating with high accuracy and precision. The nanocomposite is grown by pulsed laser deposition at either room temperature or 600 °C. The adhesive strength is evaluated by nanoscratch tests. In the room temperature process the coating attains an unusual combination of compactness, strong interfacial bonding, moderate stiffness (E = 195 ± 9 GPa and ν = 0.29 ± 0.02) and significant hardness (H = 10 ± 1 GPa), resulting in superior plastic behavior and a relatively high ratio of hardness to elastic modulus (H/E = 0.049). These features are correlated to the nanostructure of the coating, which comprises a regular dispersion of ultrafine crystalline Al 2 O 3 nanodomains (2–5 nm) in a dense and amorphous alumina matrix, as revealed by transmission electron microscopy. For the coating grown at 600 °C, strong adhesion is also observed, with an increase of stiffness and a significant enhancement of hardness (E = 277 ± 9 GPa, ν = 0.27 ± 0.02 and H = 25 ± 1 GPa), suggesting an outstanding resistance to wear (H/E = 0.091)

  14. Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

    Science.gov (United States)

    Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

    2018-01-01

    We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

  15. Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer

    Directory of Open Access Journals (Sweden)

    Xing Wang

    2016-06-01

    Full Text Available A thin Al2O3 interlayer deposited between La2O3 layer and Si substrate was used to scavenge the interfacial layer (IL by blocking the out-diffusion of substrate Si. Some advantages and disadvantages of this method were discussed in detail. Evident IL reduction corroborated by the transmission electron microscopy results suggested the feasibility of this method in IL scavenging. Significant improvements in oxygen vacancy and leakage current characteristics were achieved as the thickness of Al2O3 interlayer increase. Meanwhile, some disadvantages such as the degradations in interface trap and oxide trapped charge characteristics were also observed.

  16. Al2 O3 Underlayer Prepared by Atomic Layer Deposition for Efficient Perovskite Solar Cells.

    Science.gov (United States)

    Zhang, Jinbao; Hultqvist, Adam; Zhang, Tian; Jiang, Liangcong; Ruan, Changqing; Yang, Li; Cheng, Yibing; Edoff, Marika; Johansson, Erik M J

    2017-10-09

    Perovskite solar cells, as an emergent technology for solar energy conversion, have attracted much attention in the solar cell community by demonstrating impressive enhancement in power conversion efficiencies. However, the high temperature and manually processed TiO 2 underlayer prepared by spray pyrolysis significantly limit the large-scale application and device reproducibility of perovskite solar cells. In this study, lowtemperature atomic layer deposition (ALD) is used to prepare a compact Al 2 O 3 underlayer for perovskite solar cells. The thickness of the Al 2 O 3 layer can be controlled well by adjusting the deposition cycles during the ALD process. An optimal Al 2 O 3 layer effectively blocks electron recombination at the perovskite/fluorine-doped tin oxide interface and sufficiently transports electrons through tunneling. Perovskite solar cells fabricated with an Al 2 O 3 layer demonstrated a highest efficiency of 16.2 % for the sample with 50 ALD cycles (ca. 5 nm), which is a significant improvement over underlayer-free PSCs, which have a maximum efficiency of 11.0 %. Detailed characterization confirms that the thickness of the Al 2 O 3 underlayer significantly influences the charge transfer resistance and electron recombination processes in the devices. Furthermore, this work shows the feasibility of using a high band-gap semiconductor such as Al 2 O 3 as the underlayer in perovskite solar cells and opens up pathways to use ALD Al 2 O 3 underlayers for flexible solar cells. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Properties of copper matrix reinforced with nano- and micro-sized Al2O3 particles

    International Nuclear Information System (INIS)

    Rajkovic, Viseslava; Bozic, Dusan; Jovanovic, Milan T.

    2008-01-01

    The mixture of electrolytic copper powder with 5 wt.% of commercial Al 2 O 3 powder (average particle size: 15 and 0.75 μm, respectively) and the inert gas atomized prealloyed copper powder (average particle size: 30 μm) containing 2.5 wt.% aluminum were separately milled in air up to 20 h in the planetary ball mill. During milling aluminum in the prealloyed copper powders was oxidized in situ by internal oxidation with oxygen from the air forming very fine nano-sized Al 2 O 3 particles. The internal oxidation of 2.5 wt.% aluminum generated 4.7 wt.% of Al 2 O 3 in the copper matrix. Powders and compacts were characterized by light and scanning electron microscopy (SEM), electron probe microanalysis (EPMA) and X-ray diffraction analysis. Microhardness and electrical conductivity were also included in measurements. The microhardness of Cu-2.5 wt.% Al compacts was 3.6 times higher than that of compacts processed from electrolytic copper powder. This increase in microhardness is a consequence of a fine dispersion of Al 2 O 3 particles and refined grain structure. The average values of electrical conductivity of compacts processed from Cu-5 wt.% Al 2 O 3 and Cu-2.5 wt.% Al powders previously milled for 20 h and were 88% and 70% IACS, respectively, which is a rather significant increase if compared with values of 60% and 23% IACS of compacts processed from as-received and non-milled powders. The microhardness of 20-h milled compacts decreases with the heat treatment at 800 deg. C. Due to the effect of nano-sized Al 2 O 3 particles Cu-2.5 wt.% Al compacts show lower decrease in microhardness. The results are discussed in terms of the effect of Al 2 O 3 particle size and fine grain structure on the reinforcing of the copper matrix

  18. Thermal conductivity and viscosity of Al2O3 nanofluid based on car engine coolant

    International Nuclear Information System (INIS)

    Kole, Madhusree; Dey, T K

    2010-01-01

    Various suspensions containing Al 2 O 3 nanoparticles ( 2 O 3 nanoparticles as well as temperature between 10 and 80 0 C. The prepared nanofluid, containing only 0.035 volume fraction of Al 2 O 3 nanoparticles, displays a fairly higher thermal conductivity than the base fluid and a maximum enhancement (k nf /k bf ) of ∼10.41% is observed at room temperature. The thermal conductivity enhancement of the Al 2 O 3 nanofluid based on engine coolant is proportional to the volume fraction of Al 2 O 3 . The volume fraction and temperature dependence of the thermal conductivity of the studied nanofluids present excellent correspondence with the model proposed by Prasher et al (2005 Phys. Rev. Lett. 94 025901), which takes into account the role of translational Brownian motion, interparticle potential and convection in fluid arising from Brownian movement of nanoparticles for thermal energy transfer in nanofluids. Viscosity data demonstrate transition from Newtonian characteristics for the base fluid to non-Newtonian behaviour with increasing content of Al 2 O 3 in the base fluid (coolant). The data also show that the viscosity increases with an increase in concentration and decreases with an increase in temperature. An empirical correlation of the type log(μ nf ) = A exp(-BT) explains the observed temperature dependence of the measured viscosity of Al 2 O 3 nanofluid based on car engine coolant. We further confirm that Al 2 O 3 nanoparticle concentration dependence of the viscosity of nanofluids is very well predicted on the basis of a recently reported theoretical model (Masoumi et al 2009 J. Phys. D: Appl. Phys. 42 055501), which considers Brownian motion of nanoparticles in the nanofluid.

  19. Studies on oxidation and deuterium permeation behavior of a low temperature α-Al_2O_3-forming Fe−Cr−Al ferritic steel

    International Nuclear Information System (INIS)

    Xu, Yu-Ping; Zhao, Si-Xiang; Liu, Feng; Li, Xiao-Chun; Zhao, Ming-Zhong; Wang, Jing; Lu, Tao; Hong, Suk-Ho; Zhou, Hai-Shan; Luo, Guang-Nan

    2016-01-01

    To evaluate the capability of Fe−Cr−Al ferritic steels as tritium permeation barrier in fusion systems, the oxidation behavior together with the permeation behavior of a Fe−Cr−Al steel was investigated. Gas driven permeation experiments were performed. The permeability of the oxidized Fe−Cr−Al steel was obtained and a reduced activation ferritic/martensitic steel CLF-1 was used as a comparison. In order to characterize the oxide layer, SEM, XPS, TEM, HRTEM were used. Al_2O_3 was detected in the oxide film by XPS, and HRTEM showed that Al_2O_3 in the α phase was found. The formation of α-Al_2O_3 layer at a relatively low temperature may result from the formation of Cr_2O_3 nuclei.

  20. Proximity effect and hot-electron diffusion in Ag/Al2O3/Al tunnel junctions

    International Nuclear Information System (INIS)

    Netel, H.; Jochum, J.; Labov, S.E.; Mears, C.A.; Frank, M.; Chow, D.; Lindeman, M.A.; Hiller, L.J.

    1997-01-01

    We have fabricated Ag/Al 2 O 3 /Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition, these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z, ultra-pure superconducting crystals. 5 refs., 8 figs

  1. N2O Decomposition over Cu–Zn/γ–Al2O3 Catalysts

    Directory of Open Access Journals (Sweden)

    Runhu Zhang

    2016-12-01

    Full Text Available Cu–Zn/γ–Al2O3 catalysts were prepared by the impregnation method. Catalytic activity was evaluated for N2O decomposition in a fixed bed reactor. The fresh and used catalysts were characterized by several techniques such as BET surface area, X-ray diffraction (XRD, and scanning electron microscopy (SEM. The Cu–Zn/γ–Al2O3 catalysts exhibit high activity and stability for N2O decomposition in mixtures simulating real gas from adipic acid production, containing N2O, O2, NO, CO2, and CO. Over the Cu–Zn/γ–Al2O3 catalysts, 100% of N2O conversion was obtained at about 601 °C at a gas hourly space velocity (GHSV of 7200 h−1. Cu–Zn/γ–Al2O3 catalysts also exhibited considerably good durability, and no obvious activity loss was observed in the 100 h stability test. The Cu–Zn/γ–Al2O3 catalysts are promising for the abatement of this powerful greenhouse gas in the chemical industry, particularly in adipic acid production.

  2. Directionally solidified Al2O3/GAP eutectic ceramics by micro-pulling-down method

    Science.gov (United States)

    Cao, Xue; Su, Haijun; Guo, Fengwei; Tan, Xi; Cao, Lamei

    2016-11-01

    We reported a novel route to prepare directionally solidified (DS) Al2O3/GAP eutectic ceramics by micro-pulling-down (μ-PD) method. The eutectic crystallizations, microstructure characters and evolutions, and their mechanical properties were investigated in detail. The results showed that the Al2O3/GAP eutectic composites can be successfully fabricated through μ-PD method, possessed smooth surface, full density and large crystal size (the maximal size: φ90 mm × 20 mm). At the process of Diameter, the as-solidified Al2O3/GAP eutectic presented a combination of "Chinese script" and elongated colony microstructure with complex regular structure. Inside the colonies, the rod-type or lamellar-type eutectic microstructures with ultra-fine GAP surrounded by the Al2O3 matrix were observed. At an appropriate solidificational rate, the binary eutectic exhibited a typical DS irregular eutectic structure of "chinese script" consisting of interpenetrating network of α-Al2O3 and GAP phases without any other phases. Therefore, the interphase spacing was refined to 1-2 µm and the irregular microstructure led to an outstanding vickers hardness of 17.04 GPa and fracture toughness of 6.3 MPa × m1/2 at room temperature.

  3. Microstructure and Mechanical Properties of Zn-Ni-Al2O3 Composite Coatings

    Directory of Open Access Journals (Sweden)

    Yang Bai

    2018-05-01

    Full Text Available Zn-Ni-Al2O3 composite coatings with different Ni contents were fabricated by low-pressure cold spray (LPCS technology. The effects of the Ni content on the microstructural and mechanical properties of the coatings were investigated. According to X-ray diffraction patterns, the composite coatings were primarily composed of metallic-phase Zn and Ni and ceramic-phase Al2O3. The energy-dispersive spectroscopy results show that the Al2O3 content of the composite coatings gradually decreased with increasing of Ni content. The cross-sectional morphology revealed thick, dense coatings with a wave-like stacking structure. The process of depositing Zn and Ni particles and Al2O3 particles by the LPCS method was examined, and the deposition mechanism was demonstrated to be mechanical interlocking. The bond strength, micro hardness and friction coefficient of the coatings did not obviously change when the Ni content varied. The presence of Al2O3 and Ni increased the wear resistance of the composite coatings, which was higher than that of pure Zn coatings, and the wear mechanism was abrasive and adhesive wear.

  4. Synthesis and properties of γ-Ga2O3-Al2O3 solid solutions

    Science.gov (United States)

    Afonasenko, T. N.; Leont'eva, N. N.; Talzi, V. P.; Smirnova, N. S.; Savel'eva, G. G.; Shilova, A. V.; Tsyrul'nikov, P. G.

    2017-10-01

    The textural and structural properties of mixed oxides Ga2O3-Al2O3, obtained via impregnating γ-Al2O3 with a solution of Ga(NO3)3 and subsequent heat treatment, are studied. According to the results from X-ray powder diffraction, gallium ions are incorporated into the structure of aluminum oxide to form a solid solution of spinel-type γ-Ga2O3-Al2O3 up to a Ga2O3 content of 50 wt % of the total weight of the sample, accompanied by a reduction in the specific surface area, volume, and average pore diameter. It is concluded that when the Ga2O3 content exceeds 50 wt %, the β-Ga2O3 phase is observed along with γ-Ga2O3-Al2O3 solid solution. 71Ga and 27Al NMR spectroscopy shows that gallium replaces aluminum atoms from the tetrahedral position to the octahedral coordination in the structure of γ-Ga2O3-Al2O3.

  5. Thin film Encapsulations of Flexible Organic Light Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Tsai Fa-Ta

    2016-01-01

    Full Text Available Various encapsulated films for flexible organic light emitting diodes (OLEDs were studied in this work, where gas barrier layers including inorganic Al2O3 thin films prepared by atomic layer deposition, organic Parylene C thin films prepared by chemical vapor deposition, and their combination were considered. The transmittance and water vapor transmission rate of the various organic and inorgabic encapsulated films were tested. The effects of the encapsulated films on the luminance and current density of the OLEDs were discussed, and the life time experiments of the OLEDs with these encapsulated films were also conducted. The results showed that the transmittance are acceptable even the PET substrate were coated two Al2O3 and Parylene C layers. The results also indicated the WVTR of the PET substrate improved by coating the barrier layers. In the encapsulation performance, it indicates the OLED with Al2O3 /PET, 1 pair/PET, and 2 pairs/PET presents similarly higher luminance than the other two cases. Although the 1 pair/PET encapsulation behaves a litter better luminance than the 2 pairs/PET encapsulation, the 2 pairs/PET encapsulation has much better life time. The OLED with 2 pairs/PET encapsulation behaves near double life time to the 1 pair encapsulation, and four times to none encapsulation.

  6. Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3

    NARCIS (Netherlands)

    Terlinden, N.M.; Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2010-01-01

    Al2O3 synthesized by plasma-assisted atomic layer deposition yields excellent surface passivation of crystalline silicon (c-Si) for films down to ~ 5 nm in thickness. Optical second-harmonic generation was employed to distinguish between the influence of field-effect passivation and chemical

  7. Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

    Science.gov (United States)

    Kim, Hoonbae; Lee, Jihye; Sohn, Sunyoung; Jung, Donggeun

    2016-05-01

    Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

  8. Sensitization by UV light of α-Al2O3:C polycrystalline detectors

    International Nuclear Information System (INIS)

    Meira B, L. C.; Rubio F, H.; Neres de A, E.; Santos, A.

    2014-08-01

    This paper describes an increase in sensitivity to gamma and beta radiation on α-Al 2 O 3 :C polycrystalline detector, which has been produced by a sol-gel process, following previous exposure to ultraviolet light. The increased sensitivity of the detector as a function of the exposure time and ultraviolet wavelength was studied. Since the main luminescent centers have emission peaks at different wavelengths, selective measurements of thermoluminescent emission intensity were done, in order to investigate the possible conversion of centers as a result of the exposition to ultraviolet light. Experimental results indicate that the nature and parameters of the luminescent centers in α-Al 2 O 3 :C sol-gel material can be very different of those in α-Al 2 O 3 :C single crystal. (author)

  9. Characterization of thermoluminescent response of Al2O3:Tm/Teflon for gamma rays dosimetry

    International Nuclear Information System (INIS)

    Carvalho Junior, Alvaro B. de; Barros, Vinicius S.M. de; Elihimas, Diego Rafael M.; Khoury, Helen J.; Azevedo, Walter M. de

    2011-01-01

    In this work, α-Al 2 O 3 doped with Tm 3+ was prepared by combustion synthesis techniques for thermoluminescent (TL) ionizing radiation dosimetry applications. After this, Al 2 O 3 :Tm (0.1%) pellets were manufactured from a 2:1 homogeneous mixture of Al 2 O 3 :Tm (0.1%) and powdered Teflon (PTFE). Ten pellets were used to characterize the dosimetric properties. The dosimetric characterization was performed by analyses of the reproducibility, sensitivity of the TL response vs. dose between 1 and 10 Gy to 60 Co source and fading. The results showed a glow curve with a peak near to 225 deg C, a linear TL response with the gamma radiation dose in the range investigated and a reproducibility < 10%. These results indicate a potential use of these pellets for gamma radiation dosimetry. (author)

  10. Characterization of Al2O3-Co ceramic composite obtained by high energy mill

    International Nuclear Information System (INIS)

    Souza, J.L.; Assis, R.B. de; Carlos, E.M.; Oliveira, T.P.; Costa, F.A. da

    2014-01-01

    This work aims to characterize the ceramic composite Al 2 O3-Co obtained by high energy grinding. The composites were obtained by milling Al 2 O 3 and Co in a high energy mill at a speed of 400 rpm, in proportions of 5 to 20% Cobalt (Co). Ceramic composites with 5 and 20% cobalt were sintered at 1200 and 1300 ° C, with a 60-minute plateau and a heating rate of 10 ° C / min. The samples were characterized by X-ray diffraction (XRD), thermogravimetry and differential scanning calorimetry (TG / DSC) and scanning electron microscopy (SEM). The results show the significant effect of cobalt percentage and high energy grinding on the final properties of the Al 2 O 3 - Co ceramic composite, presenting satisfactory values for the composite with a 20% cobalt percentage, showing to be a promising material for application in cutting tools

  11. Al2O3 adherence on CoCrAl alloys

    International Nuclear Information System (INIS)

    Kingsley, L.M.

    1980-04-01

    Adherence of protective oxides on NiCrAl and CoCrAl superalloys has been promoted by a dispersion of a highly oxygen reactive element or its oxide being produced within the protection system. Two aspects of this subject are investigated here: the use of Al 2 O 3 as both the dispersion and protective oxide; and the production of an HfO 2 dispersion while simultaneously aluminizing the alloy. It was found that an Al 2 O 3 dispersion will act to promote the adherence of an external scale of Al 2 O 3 to a degree comparable to previously tested dispersions and an HfO 2 dispersion comparable to that produced by a Rhines pack treatment is produced during aluminization

  12. Effect of Al2O3 and TiO2 nanoparticles on aquatic organisms

    International Nuclear Information System (INIS)

    Gosteva, I; Morgalev, Yu; Morgaleva, T; Morgalev, S

    2015-01-01

    Environmental toxicity of aqueous disperse systems of nanoparticles of binary compounds of titanium dioxides (with particle size Δ 50 =5 nm, Δ 50 =50 nm, Δ 50 =90 nm), aluminum oxide alpha-forms (Δ 50 =7 nm and Δ 50 =70 nm) and macro forms (TiO 2 Δ 50 =350 nm, Al 2 O 3 A 50 =4000 nm) were studied using biological testing methods. The bioassay was performed using a set of test organisms representing the major trophic levels. We found the dependence of the toxic effect concentration degree of nTiO 2 and nAl 2 O 3 on the fluorescence of the bacterial biosensor 'Ekolyum', the chemotactic response of ciliates Paramecium caudatum, the growth of unicellular algae Chlorella vulgaris Beijer and mortality of entomostracans Daphnia magna Straus. We revealed the selective dependence of nTiO 2 and nAl 2 O 3 toxicity on the size, concentration and chemical nature of nanoparticles. The minimal concentration causing an organism's response on nTiO 2 and nAl 2 O 3 effect depends on the type of the test- organism and the test reaction under study. We specified L(E)C 50 and acute toxicity categories for all the studied nanoparticles. We determined that nTiO 2 (Δ 50 =5 nm) belong to the category «Acute toxicity 1», nTiO 2 (A 50 =90 nm) and nAl 2 O 3 (Δ 50 =70 nm) – to the category «Acute toxicity 2», nAl 2 O 3 (Δ 50 =7 nm) – to the category «Acute toxicity 3». No acute toxicity was registered for nTiO 2 (Δ 50 =50 nm) and macro form TiO 2 . (paper)

  13. Photoluminescence properties of the Eu-doped alpha-Al2O3 microspheres

    International Nuclear Information System (INIS)

    Liu, Dianguang; Zhu, Zhenfeng

    2014-01-01

    Highlights: • Al 2 O 3 :Eu 3+ phosphors were prepared via a microwave solvothermal route. • The particles were hierarchically nanostructured microspheres packaged by nanosheets. • The powders presented excellent orange–red emission when excited at 393 nm. • Critical concentration and distance of Eu 3+ in Al 2 O 3 is 0.007, 18 Å, respectively. -- Abstract: Al 2 O 3 :Eu 3+ samples were synthesized via microwave solvothermal method and thermal decomposition of Eu 3+ doped precursors. The sample characterizations were carried out by means of X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence (PL) spectra. XRD results indicated that Eu 3+ doped samples were most of α-Al 2 O 3 phase after being calcined at 1473 K. SEM results showed that the obtained α-Al 2 O 3 based powders via microwave solvothermal method were microspheres with an average diameter about 1.6 μm. PL spectra showed that upon excitation at 393 nm, the orange–red emission bands at the wavelength longer than 560 nm were from 5 D 0 → 7 F J (J = 1, 2) transitions. The asymmetry ratio of ( 5 D 0 → 7 F 2 )/( 5 D 0 → 7 F 1 ) intensity is about 1 and this value suggests that Eu 3+ ions occupy the same ratio of symmetry and asymmetry sites. It is shown that the 0.7 mol% of doping concentration of Eu 3+ ions in α-Al 2 O 3 :Eu 3+ is optimum. According to Dexter’s theory, the critical distance between Eu 3+ ions for energy transfer was determined to be 18 Å

  14. Effect of AL2O3 and TiO2 nanoparticles on aquatic organisms

    Science.gov (United States)

    Gosteva, I.; Morgalev, Yu; Morgaleva, T.; Morgalev, S.

    2015-11-01

    Environmental toxicity of aqueous disperse systems of nanoparticles of binary compounds of titanium dioxides (with particle size Δ50=5 nm, Δ50=50 nm, Δ50=90 nm), aluminum oxide alpha-forms (Δ50=7 nm and Δ50=70 nm) and macro forms (TiO2 Δ50=350 nm, Al2O3 A50=4000 nm) were studied using biological testing methods. The bioassay was performed using a set of test organisms representing the major trophic levels. We found the dependence of the toxic effect concentration degree of nTiO2 and nAl2O3 on the fluorescence of the bacterial biosensor "Ekolyum", the chemotactic response of ciliates Paramecium caudatum, the growth of unicellular algae Chlorella vulgaris Beijer and mortality of entomostracans Daphnia magna Straus. We revealed the selective dependence of nTiO2 and nAl2O3 toxicity on the size, concentration and chemical nature of nanoparticles. The minimal concentration causing an organism's response on nTiO2 and nAl2O3 effect depends on the type of the test- organism and the test reaction under study. We specified L(E)C50 and acute toxicity categories for all the studied nanoparticles. We determined that nTiO2 (Δ50=5 nm) belong to the category «Acute toxicity 1», nTiO2 (A50=90 nm) and nAl2O3 (Δ50=70 nm) - to the category «Acute toxicity 2», nAl2O3 (Δ50=7 nm) - to the category «Acute toxicity 3». No acute toxicity was registered for nTiO2 (Δ50=50 nm) and macro form TiO2.

  15. Synthesis of Mg–Al2O3 nanocomposites by mechanical alloying

    International Nuclear Information System (INIS)

    Liu, Jinling; Suryanarayana, C.; Ghosh, Dipankar; Subhash, Ghatu; An, Linan

    2013-01-01

    Highlights: ► Mg nanocomposites were synthesized by high-energy ball milling. ► A uniform distribution of the nano-sized reinforcements in the matrix was successfully obtained. ► The thermal stability of the formed nanocomposite was evaluated by annealing it at a high temperature. ► A reaction occurred between the initial Mg powder and Al formed as a result of the displacement reaction, leading to the formation of Mg 17 Al 12 , Al 0.58 Mg 0.42 , and Al 3 Mg 2 phases. -- Abstract: Mg–Al 2 O 3 nanocomposite powders, with Al 2 O 3 particles of 50 nm size, were synthesized by mechanical alloying starting from a mixture of 70 vol.% pure Mg and 30 vol.% Al 2 O 3 powders. A steady-state condition was obtained on milling the powder mix for about 20 h, when the crystallite size of the Mg powder was about 10 nm. The structural evolution during milling was monitored using scanning electron microscopy, energy dispersive spectrometry, and X-ray diffraction methods. The results showed that a mixture of Mg, Al 2 O 3 , and MgO phases were obtained on mechanical alloying. On annealing the milled powders at 600 °C for 30 min, a displacement reaction occurred between the Mg and Al 2 O 3 phases, when the formation of a mixture of pure Al and MgO phases was observed. Also, a reaction occurred between the initial Mg powder and Al formed as a result of the displacement reaction, leading to the formation of Mg 17 Al 12 , Al 0.58 Mg 0.42 , and Al 3 Mg 2 phases. Thus, the powder annealed after milling the Mg + Al 2 O 3 powder mix for 25 h consisted of Al, MgO and Al 3 Mg 2 phases

  16. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

  17. Sensitivity enhancement of metal oxide thin film transistor with back gate biasing

    NARCIS (Netherlands)

    Dam, V.A.T.; Blauw, M.A.; Brongersma, S.H.; Crego-Calama, M.

    2011-01-01

    In this work, a room-temperature sensing device for detecting carbon monoxide using a ZnO thin film is presented. The ZnO layer (thickness close to the Debye length), which has a polycrystalline structure, is deposited with atomic-layer deposition (ALD) on an Al2O3/Si substrate. The operating

  18. Pinning enhancement in MgB2 superconducting thin films by ...

    Indian Academy of Sciences (India)

    The magnetic field dependence of the critical current density Jc was calculated from the M–H loops and magnetic field dependence of ... MgB2 thin film; Fe2O3 nanoparticles; critical current density; r-plane Al2O3 substrate. 1. Introduction. The discovery of ... It was thought that from these cal- culations, one can choose an ...

  19. Reduction of Al2O3 in niobium--lithium systems at 10000C

    International Nuclear Information System (INIS)

    Selle, J.E.; DeVan, J.H.

    1977-07-01

    Various grades of aluminum oxide (Al 2 O 3 ) were sealed inside capsules of niobium and niobium-1% zirconium alloy which were then exposed to liquid lithium for 3000 hr at 1000 0 C. Similar unsealed capsules were exposed to a high vacuum. Reduction of the Al 2 O 3 occurred in the lithium-treated capsules, but no reaction occurred in the vacuum-treated capsules. Metallography and electron-microprobe analysis showed that reaction products in the form of compounds of niobium, aluminum, and zirconium were formed. Lithium acted as a sink for oxygen

  20. Co2+ adsorption in porous oxides Mg O, Al2O3 and Zn O

    International Nuclear Information System (INIS)

    Moreno M, J. E.; Granados C, F.; Bulbulian, S.

    2009-01-01

    The porous oxides Mg O, Al 2 O 3 and Zn O were synthesized by the chemical combustion in solution method and characterized be means of scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction. The adsorption behavior of Co 2+ ions present in aqueous solution were studied on the synthesized materials by means of experiments lots type to ambient temperature. It was found that the cobalt ions removal was of 90% in Mg O, 65% in Zn O and 72% in Al 2 O 3 respectively, indicating that the magnesium oxide is the best material to remove Co 2+ presents in aqueous solution. (Author)

  1. The Evolution of Al2O3 Content in Ancient Chinese Glasses

    Directory of Open Access Journals (Sweden)

    Wang Cheng-yu

    2016-01-01

    Full Text Available Based on the evidence from museums, collectors, the dug out of the grave, the evolution of Al2O3 content in Chinese glasses from Western Zhou to Qing dynasty was documented in this paper in detail. It was found that Al2O3 contents in ancient Chinese glasses were relatively higher than those of outside of China in the world. This is the character of the ancient Chinese glasses which is caused by not only the high Al contents in the raw materials but also by the Chinese people’s preference of the milky glasses similar to jade

  2. Preparation and properties of Ni80Fe20/Al2O3/Co magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Chen Jing; Du Jun; Wu Xiaoshan; Pan Minghu; Long Jianguo; Zhang Wei; Lu Mu; Hu An; Zhai Hongru

    2000-01-01

    With plasma oxidisation to create an insulating layer of Al 2 O 3 , the authors have repeatedly fabricated Ni 80 Fe 20 /Al 2 O 3 /Co magnetic tunnel junctions which show obvious tunneling magnetoresistance (TMR) effect. At room temperature, the maximum TMR ratio reaches 6.0%. The switch field can be less than 800 A/m with a relative step width of about 2400 A/m. The junction resistance changes from hundreds of ohms to hundreds of kilo-ohms

  3. Narrow in-gap states in doped Al2O3

    KAUST Repository

    Casas-Cabanas, Montse

    2011-10-01

    Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. © 2011 Elsevier B.V. All rights reserved.

  4. Narrow in-gap states in doped Al2O3

    KAUST Repository

    Casas-Cabanas, Montse; Fré sard, Marion; Lü ders, Ulrike; Fré sard, Raymond; Schuster, Cosima B.; Schwingenschlö gl, Udo

    2011-01-01

    Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. © 2011 Elsevier B.V. All rights reserved.

  5. TEM characterization of Al-C-Cu-Al2O3 composites produced by mechanical milling

    International Nuclear Information System (INIS)

    Santos-Beltran, A.; Gallegos-Orozco, V.; Estrada-Guel, I.; Bejar-Gomez, L.; Espinosa-Magana, F.; Miki-Yoshida, M.; Martinez-Sanchez, R.

    2007-01-01

    Novel Al-based composites (Al-C-Cu-Al 2 O 3 ) obtained by mechanical milling (MM), were characterized by transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). Analyses of composites were carried out in both, the as-milled and the as-sintered conditions. C nanoparticles were found in the as-milled condition and Al 2 O 3 nanofibers were found in as-sintered products, as determined by EELS. C and Cu react with Al to crystallize in Al 3 C 4 and Al 2 Cu structures, respectively

  6. SrZnO nanostructures grown on templated Al2O3 substrates by pulsed laser deposition

    Science.gov (United States)

    Labis, Joselito P.; Alanazi, Anwar Q.; Albrithen, Hamad A.; El-Toni, Ahmed Mohamed; Hezam, Mahmoud; Elafifi, Hussein Elsayed; Abaza, Osama M.

    2017-09-01

    The parameters of pulsed laser deposition (PLD) have been optimized to design different nanostructures of Strontium-alloyed zinc oxide (SrZnO). In this work, SrZnO nanostructures are grown on Al2O3 substrates via two-step templating/seeding approach. In the temperature range between 300 - 750 oC and O2 background pressures between 0.01 and 10 Torr, the growth conditions have been tailored to grow unique pointed leaf-like- and pitted olive-like nanostructures. Prior to the growth of the nanostructures, a thin SrZnO layer that serves as seed layer/template is first deposited on the Al2O3 substrates at ˜300oC and background oxygen pressure of 10 mTorr. The optical properties of the nanostructures were examined by UV/Vis spectroscopy and photoluminescence (PL), while the structures/morphologies were examined by SEM, TEM, and XRD. The alloyed SrZnO nanostructures, grown by ablating ZnO targets with 5, 10, 25% SrO contents, have in common a single-crystal hexagonal nanostructure with (0002) preferential orientation and have shown remarkable changes in the morphological and optical properties of the materials. To date, this is the only reported work on optimization of laser ablation parameters to design novel SrZnO nanostructures in the 5-25% alloying range, as most related Sr-doped ZnO studies were done below 7% doping. Although the physical properties of ZnO are modified via Sr doping, the mechanism remains unclear. The PLD-grown SrZnO nanostructures were directly grown onto the Al2O3 substrates; thus making these nanomaterials very promising for potential applications in biosensors, love-wave filters, solar cells, and ultrasonic oscillators.

  7. SrZnO nanostructures grown on templated Al2O3 substrates by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Joselito P. Labis

    2017-09-01

    Full Text Available The parameters of pulsed laser deposition (PLD have been optimized to design different nanostructures of Strontium-alloyed zinc oxide (SrZnO. In this work, SrZnO nanostructures are grown on Al2O3 substrates via two-step templating/seeding approach. In the temperature range between 300 - 750 oC and O2 background pressures between 0.01 and 10 Torr, the growth conditions have been tailored to grow unique pointed leaf-like- and pitted olive-like nanostructures. Prior to the growth of the nanostructures, a thin SrZnO layer that serves as seed layer/template is first deposited on the Al2O3 substrates at ∼300oC and background oxygen pressure of 10 mTorr. The optical properties of the nanostructures were examined by UV/Vis spectroscopy and photoluminescence (PL, while the structures/morphologies were examined by SEM, TEM, and XRD. The alloyed SrZnO nanostructures, grown by ablating ZnO targets with 5, 10, 25% SrO contents, have in common a single-crystal hexagonal nanostructure with (0002 preferential orientation and have shown remarkable changes in the morphological and optical properties of the materials. To date, this is the only reported work on optimization of laser ablation parameters to design novel SrZnO nanostructures in the 5-25% alloying range, as most related Sr-doped ZnO studies were done below 7% doping. Although the physical properties of ZnO are modified via Sr doping, the mechanism remains unclear. The PLD-grown SrZnO nanostructures were directly grown onto the Al2O3 substrates; thus making these nanomaterials very promising for potential applications in biosensors, love-wave filters, solar cells, and ultrasonic oscillators.

  8. The Influence of Al2O3 Powder Morphology on the Properties of Cu-Al2O3 Composites Designed for Functionally Graded Materials (FGM)

    Science.gov (United States)

    Strojny-Nędza, Agata; Pietrzak, Katarzyna; Węglewski, Witold

    2016-08-01

    In order to meet the requirements of an increased efficiency applying to modern devices and in more general terms science and technology, it is necessary to develop new materials. Combining various types of materials (such as metals and ceramics) and developing composite materials seem to be suitable solutions. One of the most interesting materials includes Cu-Al2O3 composite and gradient materials (FGMs). Due to their potential properties, copper-alumina composites could be used in aerospace industry as rocket thrusters and components in aircraft engines. The main challenge posed by copper matrix composites reinforced by aluminum oxide particles is obtaining the uniform structure with no residual porosity (existing within the area of the ceramic phase). In the present paper, Cu-Al2O3 composites (also in a gradient form) with 1, 3, and 5 vol.% of aluminum oxide were fabricated by the hot pressing and spark plasma sintering methods. Two forms of aluminum oxide (αAl2O3 powder and electrocorundum) were used as a reinforcement. Microstructural investigations revealed that near fully dense materials with low porosity and a clear interface between the metal matrix and ceramics were obtained in the case of the SPS method. In this paper, the properties (mechanical, thermal, and tribological) of composite materials were also collected and compared. Technological tests were preceded by finite element method analyses of thermal stresses generated in the gradient structure, and additionally, the role of porosity in the formation process of composite properties was modeled. Based on the said modeling, technological conditions for obtaining FGMs were proposed.

  9. A comparison of the doppler-broadened positron annihilation spectra of neutron irradiated Al 2O 3 and MgAl 2O 3

    Science.gov (United States)

    Jones, P. L.; Schaffer, J. P.; Cocks, F. H.; Clinard, F. W.; Hurley, G. F.

    1985-01-01

    Radiation damage studies of oxides and ceramics have become of increasing importance due to the projected use of these materials in thermonuclear fusion reactors as electronic insulators and first wall materials. In addition these materials are important in RAD waste disposal. As part of a study of the defect structure in radiation damaged ceramics Doppler-broadened positron annihilation spectra have been obtained for a series of single crystal sapphire (α-Al 2O 3) and polycrystal (1:1) and (1:2) magnesium aluminate spinel (MgO·Al 2O 3 and MgO-2Al 2O 3) samples. These samples were irradiated in EBR-II to a fluence of 3 × 10 25 n/m 2 (E > 0.1 MeV) at 740°C, and 2 × 10 26 n/m 2 (E > 0.1 MeV) at ~ 550°C respectively. Positron annihilation spectra lineshapes for the irradiated, annealed, and as-received samples of both materials were compared using S parameter analysis. These calculations were made on deconvoluted gamma ray spectra that were free of any instrumental broadening effects. In this way, absolute S parameter changes could be calculated. The observed changes in the S parameter are consistent with independent volume swelling measurements for both the α-A1 2O 3 and the (1:2) MgAl 2O 4 samples. However, the change in S parameter measured for the (1:1) spinel is contrary to the measured volume change. This apparent anomaly indicates a predominence of interstitial as opposed to vacancy type defects in this material.

  10. Preparation and Characterization of PVC-Al2O3-LiClO4 Composite Polymeric Electrolyte

    International Nuclear Information System (INIS)

    Azizan Ahmad; Mohd Yusri Abdul Rahman; Siti Aminah Mohd Noor; Mohd Reduan Abu Bakar

    2009-01-01

    Ionic conductivity of composite polymer electrolyte PVC-Al 2 O 3 -LiClO 4 as a function of Al 2 O 3 concentration has been studied. The electrolyte samples were prepared by solution casting technique. Their ionic conductivity was measured using impedance spectroscopy technique. It was observed that the conductivity of the electrolyte varies with Al 2 O 3 concentration. The highest room temperature conductivity of the electrolyte of 3.43 x 10 -10 S.cm -1 was obtain at 25 % by weight of Al 2 O 3 and that without Al 2 O 3 filler was found to be 2.43 x 10 -11 S.cm -1 . The glass transition temperature decreases with the increase of Al 2 O 3 percentage due to the increasing amorphous state, meanwhile the degradation temperature increases with the increase of Al 2 O 3 percentage. Both of these thermal properties influence the enhancement of the conductivity value. The morphology of the samples shows the even distribution of the Al 2 O 3 filler in the samples. However, the filler starts to agglomerate in the sample when high percentage of Al 2 O 3 is being used. In conclusion, the addition of Al 2 O 3 filler improves the ionic conductivity of PVC- Al 2 O 3 -LiCIO 4 solid polymer electrolyte. (author)

  11. Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC

    Science.gov (United States)

    Suvanam, Sethu Saveda; Usman, Muhammed; Martin, David; Yazdi, Milad. G.; Linnarsson, Margareta; Tempez, Agnès; Götelid, Mats; Hallén, Anders

    2018-03-01

    In this paper we demonstrate a process optimization of atomic layer deposited Al2O3 on 4H-SiC resulting in an improved interface and electrical properties. For this purpose the samples have been treated with two pre deposition surface cleaning processes, namely CP1 and CP2. The former is a typical surface cleaning procedure used in SiC processing while the latter have an additional weak RCA1 cleaning step. In addition to the cleaning and deposition, the effects of post dielectric annealing (PDA) at various temperatures in N2O ambient have been investigated. Analyses by scanning electron microscopy show the presence of structural defects on the Al2O3 surface after annealing at 500 and 800 °C. These defects disappear after annealing at 1100 °C, possibly due to densification of the Al2O3 film. Interface analyses have been performed using X-ray photoelectron spectroscopy (XPS) and time-of-flight medium energy ion scattering (ToF MEIS). Both these measurements show the formation of an interfacial SiOx (0 < x < 2) layer for both the CP1 and CP2, displaying an increased thickness for higher temperatures. Furthermore, the quality of the sub-oxide interfacial layer was found to depend on the pre deposition cleaning. In conclusion, an improved interface with better electrical properties is shown for the CP2 sample annealed at 1100 °C, resulting in lower oxide charges, strongly reduced flatband voltage and leakage current, as well as higher breakdown voltage.

  12. Structural details of Al/Al 2O3 junctions and their role in the formation of electron tunnel barriers

    Science.gov (United States)

    Koberidze, M.; Puska, M. J.; Nieminen, R. M.

    2018-05-01

    We present a computational study of the adhesive and structural properties of the Al/Al 2O3 interfaces as building blocks of the metal-insulator-metal (MIM) tunnel devices, where electron transport is accomplished via tunneling mechanism through the sandwiched insulating barrier. The main goal of this paper is to understand, on the atomic scale, the role of the geometrical details in the formation of the tunnel barrier profiles. Initially, we concentrate on the adhesive properties of the interfaces. To provide reliable results, we carefully assess the accuracy of the traditional methods used to examine Al/Al 2O3 systems. These are the most widely employed exchange-correlation functionals—local-density approximation and two different generalized gradient approximations; the universal binding-energy relation for predicting equilibrium interfacial distances and adhesion energies; and the ideal work of separation as a measure of junction stability. In addition, we show that the established interpretation of the computed ideal work of separation might be misleading in predicting the optimal interface structures. Finally, we perform a detailed analysis of the atomic and interplanar relaxations in each junction, and identify their contributions to the tunnel barrier parameters. Our results imply that the structural irregularities on the surface of the Al film have a significant contribution to lowering the tunnel barrier height, while atomic relaxations at the interface and interplanar relaxations in Al2O3 may considerably change the width of the barrier and, thus, distort its uniformity. Both the effects may critically influence the performance of the MIM tunnel devices.

  13. n-MoS2/p-Si Solar Cells with Al2O3 Passivation for Enhanced Photogeneration.

    Science.gov (United States)

    Rehman, Atteq Ur; Khan, Muhammad Farooq; Shehzad, Muhammad Arslan; Hussain, Sajjad; Bhopal, Muhammad Fahad; Lee, Sang Hee; Eom, Jonghwa; Seo, Yongho; Jung, Jongwan; Lee, Soo Hong

    2016-11-02

    Molybdenum disulfide (MoS 2 ) has recently emerged as a promising candidate for fabricating ultrathin-film photovoltaic devices. These devices exhibit excellent photovoltaic performance, superior flexibility, and low production cost. Layered MoS 2 deposited on p-Si establishes a built-in electric field at MoS 2 /Si interface that helps in photogenerated carrier separation for photovoltaic operation. We propose an Al 2 O 3 -based passivation at the MoS 2 surface to improve the photovoltaic performance of bulklike MoS 2 /Si solar cells. Interestingly, it was observed that Al 2 O 3 passivation enhances the built-in field by reduction of interface trap density at surface. Our device exhibits an improved power conversion efficiency (PCE) of 5.6%, which to our knowledge is the highest efficiency among all bulklike MoS 2 -based photovoltaic cells. The demonstrated results hold the promise for integration of bulklike MoS 2 films with Si-based electronics to develop highly efficient photovoltaic cells.

  14. Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

    DEFF Research Database (Denmark)

    Bodea, M. A.; Sbarcea, G.; Naik, G. V.

    2013-01-01

    Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass...

  15. Improved silicon surface passivation of APCVD Al2O3 by rapid thermal annealing

    NARCIS (Netherlands)

    Black, L.E.; Allen, T.; McIntosh, K.R.; Cuévas, A.

    2016-01-01

    Short-duration post-deposition thermal treatments at temperatures above those normally used for annealing activation have the potential to further improve the already excellent passivation of crystalline silicon (c-Si) achieved by Al2O3, but have so far received little attention. In this work we

  16. Preparation and Characterization of NiMo/Al2O3Catalyst for Hydrocracking Processing

    Directory of Open Access Journals (Sweden)

    Widiyadi Aditya

    2018-01-01

    Full Text Available Hydrocracking is a chemical process used in petroleum refineries for converting high boiling hydrocarbons in petroleum crude oils to more valuable lower boiling products such as gasoline, kerosene, and diesel oil that operate at high temperature and pressure. Catalyst was used in hydrocracking to reduce temperature and pressure. Hydrocracking catalyst are composed of active components and support. Alumina is widely used in hydrocracking process as catalyst support due to its high surface area, high thermal stability, and low prices. The objective of this research was preparated NiMo/Al2O3 catalyst that used as hydrocracking catalyst. Catalyst was synthesized by wetness impregnation method and simple heating method with various kind of Al2O3. The physicochemical properties of catalyst were investigated by X-ray diffraction (XRD to determine type of crystal and scanning electron microscopy (SEM to determine morphology of the catalyst. The NiMo/Al2O3 catalyst prepared by aluminium potassium sulfate dodecahydrate exhibited the highest crystallinity of 90.23% and it is clear that MoO3 and NiO crystallites are highly dispersed on the NiMo/Al2O3 catalyst which indicates as the best catalyst. The catalytic activity in hydrocracking process was successfully examined to convert fatty acid into hydrocarbon.

  17. Sorption of Cs onto γ-Al2O3 using batch technique

    International Nuclear Information System (INIS)

    Wang Xiangke

    2004-01-01

    The sorption of Cs onto γ-Al 2 O 3 is studied by using batch technique, ultra-filtration method and UV vis spectrophotometer at room temperature, pH 4.0, 6.0 and 8.0, the ionic strength of NaClO 4 is from 0.001 mol/L to 0.1 mol/L. The concentration of humic acid in the solution is determined at wavelength of 254 nm. The sorption of humic acid on the γ-Al 2 O 3 is strong (≅98% HA is sorbed on the surface of alumina at pH zpc =9.2)) and strongly dependent on pH values. At pH>9.2, the sorption of HA is decreased markedly with the increasing of pH. Humic acid has a little negative effect on the sorption of Cs onto alumina, this may be attributed to the formation of HA-Cs complexation in the solution. The sorption of Cs onto γ-Al 2 O 3 is weakly dependent on the pH and independent on the ionic strength. Freundlich isotherm can fit the sorption isotherms very well. The sorption of Cs onto γ-Al 2 O 3 may be contributed to cation exchange and surface complexation mechanisms. (authors)

  18. Electrophoretic deposition and reaction-bond sintering of Al2O3/Ti ...

    Indian Academy of Sciences (India)

    In the present work, high temperature of sintering pro- cess (1050◦C in an inert atmosphere) caused diffusion of. Figure 1. SEM of Al2O3–Ti composite coatings ... Increasing the surface roughness caused to increase the friction coefficient due to mechanical engagement in the surface.21 With the increase in the amount of ...

  19. Microstructural characterization in diffusion bonded TiC–Al 2 O 3 ...

    Indian Academy of Sciences (India)

    The diffusion bonded TiC–Al2O3/Cr18–Ni8 joint was investigated by a variety of characterization techniques such as scanning electron microscope (SEM) with energy dispersion ... Key Lab of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University (South Campus), Jinan 250061, P.R. China ...

  20. Exposure of metallic copper surface on Cu-Al2O3-carbon catalysts

    NARCIS (Netherlands)

    Menon, P.G.; Prasad, J.

    1970-01-01

    The bifunctional nature of Cu---Al2O3-on-carbon catalysts, used in the direct catalytic conversion of ethanol to ethyl acetate, prompted an examination of the dispersion of Cu on the composite catalyst. For this, the N2O-method of Osinga et al. for estimation of bare metallic copper surface on

  1. Acid-base properties of the surface of the α-Al2O3 suspension

    Science.gov (United States)

    Ryazanov, M. A.; Dudkin, B. N.

    2009-12-01

    The distribution of the acid-base centers on the surface of α-Al2O3 suspension particles was studied by potentiometric titration, and the corresponding p K spectra were constructed. It was inferred that the double electric layer created by the supporting electrolyte substantially affected the screening of the acid-base centers on the particle surface of the suspension.

  2. Reductive amination of ethanol to ethylamines over Ni/Al_2O_3 catalysts

    International Nuclear Information System (INIS)

    Park, Jun Hyun; Hong, Eunpyo; An, Sang Hee; Shin, Chae-Ho; Lim, Dong-Hee

    2017-01-01

    Ni(x)/Al_2O_3 (x=wt%) catalysts with Ni loadings of 5-25 wt% were prepared via a wet impregnation method on an γ-Al_2O_3 support and subsequently applied in the reductive amination of ethanol to ethylamines. Among the various catalysts prepared, Ni(10)/Al2O3 exhibited the highest metal dispersion and the smallest Ni particle size, resulting in the highest catalytic performance. To reveal the effects of reaction parameters, a reductive amination process was performed by varying the reaction temperature (T), weight hourly space velocity (WHSV), and NH_3 and H_2 partial pressures in the reactions. In addition, on/off experiments for NH_3 and H_2 were also carried out. In the absence of NH_3 in the reactant stream, the ethanol conversion and selectivities towards the different ethylamine products were significantly reduced, while the selectivity to ethylene was dominant due to the dehydration of ethanol. In contrast, in the absence of H_2, the selectivity to acetonitrile significantly increased due to dehydrogenation of the imine intermediate. Although a small amount of catalyst deactivation was observed in the conversion of ethanol up to 10 h on stream due to the formation of nickel nitride, the Ni(10)/Al_2O_3 catalyst exhibited stable catalytic performance over 90 h under the optimized reaction conditions (i.e., T=190 .deg. C, WHSV=0.9 h"-"1, and EtOH/NH_3/H_2 molar ratio=1/1/6).

  3. Positron Annihilation Lifetime Study of Pure and Doped Polyvinyl Chloride with Al2O3

    International Nuclear Information System (INIS)

    Abdel-Hady, E.E.; Hamdy, F. M. M.; Alaa, H.B.

    2005-01-01

    Positron annihilation lifetime of pure and doped polyvinyl chloride (PVC) with Al 2 O 3 reflect the effect of concentration as well as temperature on free volume. Therefore, variations of the ortho-positronium (o-Ps) lifetime and its intensity have been correlated with changes in the dielectric properties of the pure and doped PVC. The o-Ps lifetime and its intensity show a linear dependence with a discontinuity at 20 % concentration of Al 2 O 3 . The size and the fractional of the o-Ps hole volume were estimated from the positron annihilation parameters. Therefore, the temperature dependence of the electrical conductivity and the positron annihilation parameters on pure and doped PVC with 20 % Al 2 O 3 were studied in the range from 20 to 140 degree C. The shift of the glass transition temperature to lower temperature for the 20 % Al 2 O 3 doped PVC might explain the increase in the electrical conductivity with the concentration of the additive

  4. Neutron studies of nanostructured CuO-Al2O3 NOx removal catalysts

    International Nuclear Information System (INIS)

    Ozawa, Masakuni; Loong Chun-Keung

    1997-01-01

    Nanostructured powders of automotive catalytic system CuO0Al 2 O 3 , targeted for nitrogen oxides (NOx) removal under lean-burn engine conditions, were investigated using neutron diffraction and small-angle neutron scattering. The crystal phases, structural transformations and microstructure of 10 mol% Cu-Al 2 O 3 powders are characterized according to the heat-treatment conditions. These properties are correlated with the pore structure and NOx removal efficiency determined by nitrogen adsorption isotherm, electron spin resonance, and temperature programmed reaction measurements. The γ-(Cu, Al) 2 O 3 phase and the mass-fractal-like aggregate of particles (size ∼ 26 nm) at annealing temperatures below 900 degrees C were found to be crucial to the high NOx removal performance. The transformation to bulk crystalline phases of α-Al 2 O 3 + CuAl 2 O 4 spinel above ∼1050 degrees C corresponds to a drastic drop of Nox removal efficiency. The usefulness of neutron-scattering techniques as well as their complementarity with other traditional methods of catalytic research are discussed

  5. Voigt modelling of size–strain analysis: Application to α-Al2O3 ...

    Indian Academy of Sciences (India)

    Unknown

    urea mixture, annealed samples and commercial α-Al2O3 sample. It is likely from the ... used for line broadening studies, the Stokes deconvolu- tion (Stokes 1948) ... unbiased approach to obtain the 'true specimen broad- ened' profile ... Experimental ... the Warren–Averbach method, simplified integral breadth method and ...

  6. H2 assisted NH3-SCR over Ag/Al2O3 for automotive applications

    DEFF Research Database (Denmark)

    Fogel, Sebastian

    -BEA can give a high NOx conversion in a broad temperature window without the need to dose H2 at higher temperatures. The aim of this study has been to investigate the combined Ag/Al2O3 and Fe-BEA catalyst system both at laboratory-scale and in full-scale enginebench testing. The catalysts were combined...... both in a sequential dual-bed layout and a dual-layer layout where the catalysts were coated on top of each other. The Ag/Al2O3 catalyst was also investigated with the aim of improving the sulphur tolerance and low-temperature activity by testing different alumina-supports. A large focus of this study...... the layers allowing diffusion of reaction intermediates between them. Ag/Al2O3 only and the combined Ag/Al2O3 – Fe-BEA systems were active during the transient NEDC. The NOx conversions were not very high which is related to the very low temperature of the NEDC and the lower than expected activity of the Ag...

  7. Dynamic grain growth in superplastic Y-TZP and Al2O3/YTZ

    International Nuclear Information System (INIS)

    Nieh, T.G.; Tomasello, C.M.; Wadsworth, J.

    1990-01-01

    This paper reports that both static and dynamic grain growth have been studied during superplastic deformation of fine-grained yttria-stabilized tetragonal zirconia (Y-TZP) and alumina reinforced yttria-stabilized tetragonal zirconia (Al 2 O 3 /YTZ). Grain growth was observed in both materials at temperatures above 1350 degrees C. In the case of Y-TZP, both static and dynamic grain growth were found to obey a similar equation of the form: D 3 -D 0 3 = kt where D is the instantaneous grain size, D 0 is the initial grain size, t is the time, and k is a kinetic constant which depends primarily on temperature and grain boundary energy. The activation energies for Y-TZP were approximately 580 and 520 kJ/mol, for static and dynamic grain growth, respectively. In the case of Al 2 O 3 /YTZ, it was found that the grain growth rate for the Al 2 O 3 phase was slower than that for the ZrO 2 phase. The growth rate of the ZrO 2 phase in Al 2 O 3 /YTZ is, however, similar to that in monolithic ZrO 2 i.e., Y-TZP

  8. Crack-resistant Al2O3–SiO2 glasses

    Science.gov (United States)

    Rosales-Sosa, Gustavo A.; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

    2016-01-01

    Obtaining “hard” and “crack-resistant” glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3–(100–x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3–SiO2 glasses. In particular, the composition of 60Al2O3•40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses. PMID:27053006

  9. Theory of Al2O3 incorporation in SiO2

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper

    2002-01-01

    Different possible forms of Al2O3 units in a SiO2 network are studied theoretically within the framework of density-functional theory. Total-energy differences between the various configurations are obtained, and simple thermodynamical arguments are used to provide an estimate of their relative...

  10. Crystallization kinetics of BaO-Al2O3-SiO2 glasses

    Science.gov (United States)

    Bansal, Narottam P.; Hyatt, Mark J.

    1989-01-01

    Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.

  11. Crack-resistant Al2O3-SiO2 glasses.

    Science.gov (United States)

    Rosales-Sosa, Gustavo A; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki

    2016-04-07

    Obtaining "hard" and "crack-resistant" glasses have always been of great important in glass science and glass technology. However, in most commercial glasses both properties are not compatible. In this work, colorless and transparent xAl2O3-(100-x)SiO2 glasses (30 ≤ x ≤ 60) were fabricated by the aerodynamic levitation technique. The elastic moduli and Vickers hardness monotonically increased with an increase in the atomic packing density as the Al2O3 content increased. Although a higher atomic packing density generally enhances crack formation in conventional oxide glasses, the indentation cracking resistance increased by approximately seven times with an increase in atomic packing density in binary Al2O3-SiO2 glasses. In particular, the composition of 60Al2O3 • 40SiO2 glass, which is identical to that of mullite, has extraordinary high cracking resistance with high elastic moduli and Vickers hardness. The results indicate that there exist aluminosilicate compositions that can produce hard and damage-tolerant glasses.

  12. Ir-Ru/Al2O3 catalysts used in satellite propulsion

    Directory of Open Access Journals (Sweden)

    T.G. Soares Neto

    2003-09-01

    Full Text Available Ir/Al2O3, Ir-Ru/Al2O3 and Ru/Al2O3, catalysts with total metal contents of 30% were prepared using the methods of incipient wetness and incipient coimpregnation wetness and were tested in a 2N microthruster. Their performances were then compared with that of the Shell 405 commercial catalyst (30% Ir/Al2O3. Tests were performed in continuous and pulsed regimes, where there are steep temperature and pressure gradients, from ambient values up to 650 ºC and 14 bar. Performance stability, thrust produced, temperature and stagnation pressure in the chamber and losses of mass were analyzed and compared to the corresponding parameters in Shell 405 tests. It was observed that the performance of all the above-mentioned catalysts was comparable to that of the commercial one, except for in loss of mass, where the values was higher, which was attributed to the lower mechanical resistance of the support.

  13. Thermally stimulated conductivity and thermoluminescence from Al2O3 : C

    DEFF Research Database (Denmark)

    Agersnap Larsen, N.; Bøtter-Jensen, L.; McKeever, S.W.S.

    1999-01-01

    Simultaneous measurements of thermoluminescence (TL) and thermally stimulated conductivity (TSC) are reported on single-crystal dosimetry-quality Al2O3:C following gamma irradiation at room temperature. Analysis of the data reveals a superposition of several first-order TL and TSC peaks caused...

  14. Monolayer dispersion of CoO on Al2O3 probed by positronium atom

    International Nuclear Information System (INIS)

    Liu, Z.W.; Zhang, H.J.; Chen, Z.Q.

    2014-01-01

    CoO/Al 2 O 3 catalysts were prepared by wet impregnation method with CoO contents ranging from 0 wt% to 24 wt%. X-ray diffraction and X-ray photoelectron spectroscopy measurements suggest formation of CoO after calcined in N 2 . Quantitative X-ray diffraction analysis indicates monolayer dispersion capacity of CoO in CoO/Al 2 O 3 catalysts to be about 3 wt%. Positron annihilation lifetime and coincidence Doppler broadening measurements were performed to study the dispersion state of CoO on Al 2 O 3 . The positron lifetime measurements reveal two long lifetime components τ 3 and τ 4 , which correspond to ortho-positronium annihilation lifetime in microvoids and large pores, respectively. It was found that the positronium atom is very sensitive to the dispersion state of CoO on Al 2 O 3 . The presence of CoO significantly decreases both the lifetime and the intensity of τ 4 . Detailed analysis of the coincidence Doppler broadening measurements suggests that with the CoO content lower than the monolayer dispersion, spin conversion reaction of positronium is induced by CoO. When the cobalt content is higher than the monolayer dispersion capacity, inhibition of positronium formation becomes the dominate effect.

  15. Preparation of Al2O3/Mo nanocomposite powder via chemical route and spray drying

    International Nuclear Information System (INIS)

    Lo, M.; Cheng, F.; Wei, W.J.

    1996-01-01

    A route to prepare nanometer-sized Mo particulates in Al 2 O 3 was attempted by a combination of solution reactions in molecular scale and forcing precipitation by a spray-drying technique. MoO 3 was first dissolved in ammonia water and then added in the slurry with high purity, submicrometer Al 2 O 3 powder. Mixed suspension was spray-dried, and then the dried granules were reduced by hydrogen gas and further hot-pressing to a bulky composite at various temperatures. Dissolution of Mo oxide, adsorption reactions on alumina surface, and surface potential of alumina particles in homogeneous ammonia suspension were studied. Characterization of the granules, including compactability, flowing properties, surface morphology, grain growth of Mo and Al 2 O 3 , and mixing homogeneity, were examined. Homogeneity of the spray-dried granules was determined by the calculation of mixing index and the observation of the microstructure of sintered body. The existence of intergranular, intragranular, and nanosized Mo particulates within Al 2 O 3 grains was observed by transmission electron microscopy (TEM). All the evidences revealed that homogeneous composites with nanometer-sized Mo had been successfully prepared by this attempt with the proposed chemical route and following spray-drying process. copyright 1996 Materials Research Society

  16. Er3+-Al2O3 nanoparticles doping of borosilicate glass

    International Nuclear Information System (INIS)

    Massera, Jonathan; Petit, Laeticia; Hupa, Leena; Hupa, Mikko; Koponen, Joona; Glorieux, Benoit

    2015-01-01

    Novel borosilicate glasses were developed by adding in the glass batch Er 3+ -Al 2 O 3 nanoparticles synthetized by using a soft chemical method. A similar nanoparticle doping with modified chemical vapour deposition (MCVD) process was developed to increase the efficiency of the amplifying silica fibre in comparison to using MCVD and solution doping. It was shown that with the melt quench technique, a Er 3+ -Al 2 O 3 nanoparticle doping neither leads to an increase in the Er 3+ luminescence properties nor allows one to control the rare-earth chemical environment in a borosilicate glass. The site of Er 3+ in the Er 3+ -Al 2 O 3 nanoparticle containing glass seems to be similar as in glasses with the same composition prepared using standard raw materials. We suspect the Er 3+ ions to diffuse from the nanoparticles into the glass matrix. There was no clear evidence of the presence of Al 2 O 3 nanoparticles in the glasses after melting. (author)

  17. Optical spectroscopic study of Al2O3:Ti3+ under hydrostatic pressure

    NARCIS (Netherlands)

    García-Revilla, S.; Rodríguez, F.; Hernández, I.; Valiente, R.; Pollnau, Markus

    2002-01-01

    This work investigates the effect of hydrostatic pressure on the excitation, emission and lifetime of Ti3+-doped Al2O3 in the 0–110 kbar range. The application of pressure induces band shifts that are correlated with the corresponding local structural changes undergone by the TiO6 complex. The

  18. Preparation and Characterization of NiMo/Al2O3Catalyst for Hydrocracking Processing

    Science.gov (United States)

    Widiyadi, Aditya; Guspiani, Gema Adil; Riady, Jeffry; Andreanto, Rikky; Chaiunnisa, Safina Dea; Widayat

    2018-02-01

    Hydrocracking is a chemical process used in petroleum refineries for converting high boiling hydrocarbons in petroleum crude oils to more valuable lower boiling products such as gasoline, kerosene, and diesel oil that operate at high temperature and pressure. Catalyst was used in hydrocracking to reduce temperature and pressure. Hydrocracking catalyst are composed of active components and support. Alumina is widely used in hydrocracking process as catalyst support due to its high surface area, high thermal stability, and low prices. The objective of this research was preparated NiMo/Al2O3 catalyst that used as hydrocracking catalyst. Catalyst was synthesized by wetness impregnation method and simple heating method with various kind of Al2O3. The physicochemical properties of catalyst were investigated by X-ray diffraction (XRD) to determine type of crystal and scanning electron microscopy (SEM) to determine morphology of the catalyst. The NiMo/Al2O3 catalyst prepared by aluminium potassium sulfate dodecahydrate exhibited the highest crystallinity of 90.23% and it is clear that MoO3 and NiO crystallites are highly dispersed on the NiMo/Al2O3 catalyst which indicates as the best catalyst. The catalytic activity in hydrocracking process was successfully examined to convert fatty acid into hydrocarbon.

  19. Radioluminescence in Al2O3: C - analytical and numerical simulation results

    DEFF Research Database (Denmark)

    Pagonis, V.; Lawless, J.; Chen, R.

    2009-01-01

    The phenomenon of radioluminescence (RL) has been reported in a number of materials including Al2O3 : C, which is one of the main dosimetric materials. In this work, we study RL using a kinetic model involving two trapping states and two kinds of recombination centres. The model has been previous...

  20. Porous HA-Al2O3 composite characterization using corn starch as a porogen agent

    International Nuclear Information System (INIS)

    Silva, L.A.J. da; Galdino, A.G.S.; Cardoso, G.B.C.; Zavaglia, C.A.C.

    2011-01-01

    The porous ceramics based on hydroxyapatite have great potential for application in bone grafts due to its chemical similarity with the mineral phase of bone tissue, but have poor biomechanical properties, which cause limitations in its applications. This work aims to analyze the structural characteristics of porous ceramics obtained by addition of hydroxyapatite (HA, sintered in the laboratory), Corn Starch (CS, commercial) and Al 2 O 3 (ALCOA), at different temperatures. Samples were made of dense HA (100% HA), porous (70% HA - 30% CS) and with addition of 2.5%, 5% and 7.5% Al 2 O 3 porous composition. The samples were sintered at 1250°C, 1300 deg C and 135 0°C and characterized by: XRF, XRD, SEM and density by the Archimedes method. Concludes It is the possibility of obtaining samples porous HA / Al 2 O 3 using starch as porogenic agent. The temperature and concentration of Al 2 O 3 most appropriate were: 1250°C and 7.5%. (author)

  1. The synthesis of higher alcohols using modified Cu/ZnO/Al@#2@#O@#3@# catalysts

    NARCIS (Netherlands)

    Slaa, J.C.; Slaa, J.C.; van Ommen, J.G.; Ross, J.R.H.; Ross, J.R.H.

    1992-01-01

    This paper gives a review of research work in the synthesis of higher alcohols over catalysts based on Cu/ZnO/Al2O3, emphasizing three main topics: (i) the effect on selectivity of the addition of several compounds to this catalyst, (ii) the effect on selectivity of the reaction conditions used, and

  2. Fiber-coupled Al_2O_3:C radioluminescence dosimetry for total body irradiations

    International Nuclear Information System (INIS)

    Buranurak, S.; Andersen, C.E.

    2016-01-01

    In vivo dosimetry can be important and relevant in radiotherapy, especially when commissioning new treatment techniques at hospitals. This study investigates the potential use of fiber-coupled radioluminescence (RL) dosimetry based on Al_2O_3:C or organic plastic scintillators for this purpose in the context of Total Body Irradiations (TBIs) where patients are treated with large fields of 6 or 18 MV photons at an extended source-to-surface distance (SSD). The study shows that Al_2O_3:C dosimetry using the saturated-RL protocol may be suitable for real-time in vivo dosimetry during TBI treatments from the perspective of the good agreement with alanine dosimetry and other critical phantom tests, including the ability to cope with the large stem signal experienced during TBI treatments at extended SSD. In contrast, the chromatic stem removal technique often used for organic plastic scintillators did not work well in large fields with the tested calibration procedure and instrumentation. An apparent dose-rate effect discussed in a previous study of the RL properties of Al_2O_3:C (Andersen et al., 2011) was found to have resulted from an overlooked dead time problem in the counting system, and this potential caveat can therefore be removed from the list of potential problems associated with fiber-coupled Al_2O_3:C dosimetry using the saturated-RL protocol. This further has implications for TBI dosimetry using the RL Al_2O_3:C system due to large dose-rate differences between calibrations at the iso-center and in vivo measurements at extended source-to-surface distances. - Highlights: • Fiber-coupled dosimetry can be used for measurements during total body irradiations. • An apparent dose-effect associated with radioluminescence from Al2O3:C was resolved. • The gated-counting stem removal procedure worked well for Al2O3:C in pulsed accelerator beams. • The chromatic stem removal procedure did not work well with the tested instrumentation and organic plastic

  3. Influence of Carrier Gas Composition on the Stress of Al2O3 Coatings Prepared by the Aerosol Deposition Method

    Directory of Open Access Journals (Sweden)

    Michael Schubert

    2014-08-01

    Full Text Available Al2O3 films were prepared by the aerosol deposition method at room temperature using different carrier gas compositions. The layers were deposited on alumina substrates and the film stress of the layer was calculated by measuring the deformation of the substrate. It was shown that the film stress can be halved by using oxygen instead of nitrogen or helium as the carrier gas. The substrates were annealed at different temperature steps to gain information about the temperature dependence of the reduction of the implemented stress. Total relaxation of the stress can already be achieved at 300 °C. The XRD pattern shows crystallite growth and reduction of microstrain while annealing.

  4. Surface amorphization in Al2O3 induced by swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

    2013-01-01

    Microstructure in single crystalline Al 2 O 3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 10 13 to 1.0 × 10 15 ions/cm 2 . After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al 2 O 3 , high-density S e causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 10 13 ions/cm 2 for single crystalline Al 2 O 3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al 2 O 3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al 2 O 3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 10 14 ions/cm 2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures

  5. The influence of powder particle size on properties of Cu-Al2O3 composites

    Directory of Open Access Journals (Sweden)

    Rajković V.

    2009-01-01

    Full Text Available Inert gas atomized prealloyed copper powder containing 2 wt.% Al (average particle size ≈ 30 μm and a mixture consisting of copper (average particle sizes ≈ 15 μm and 30 μm and 4 wt.% of commercial Al2O3 powder particles (average particle size ≈ 0.75 μm were milled separately in a high-energy planetary ball mill up to 20 h in air. Milling was performed in order to strengthen the copper matrix by grain size refinement and Al2O3 particles. Milling in air of prealloyed copper powder promoted formation of finely dispersed nano-sized Al2O3 particles by internal oxidation. On the other side, composite powders with commercial micro-sized Al2O3 particles were obtained by mechanical alloying. Following milling, powders were treated in hydrogen at 400 0C for 1h in order to eliminate copper oxides formed on their surface during milling. Hot-pressing (800 0C for 3 h in argon at pressure of 35 MPa was used for compaction of milled powders. Hot-pressed composite compacts processed from 5 and 20 h milled powders were additionally subjected to high temperature exposure (800°C for 1 and 5h in argon in order to examine their thermal stability. The results were discussed in terms of the effects of different size of starting powders, the grain size refinement and different size of Al2O3 particles on strengthening, thermal stability and electrical conductivity of copper-based composites.

  6. Surface amorphization in Al2O3 induced by swift heavy ion irradiation

    Science.gov (United States)

    Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

    2013-11-01

    Microstructure in single crystalline Al2O3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 1013 to 1.0 × 1015 ions/cm2. After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al2O3, high-density Se causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 1013 ions/cm2 for single crystalline Al2O3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al2O3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al2O3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 1014 ions/cm2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures.

  7. Sintering behavior and property of bioglass modified HA-Al2O3 composite

    Directory of Open Access Journals (Sweden)

    Wang Li-li

    2012-01-01

    Full Text Available The bioglass modified HA-Al2O3 composites were successfully fabricated by mixing HA, synthesized by wet chemical method between precursor materials H3PO4 and Ca(OH2, with 25wt% Al2O3 and different content of bioglass (5%, 25%, 45%, 65wt% respectively, with a mole fraction of 53.9%SiO2, 22.6%Na2O, 21.8%CaO, and 1.7wt%P2O5, sintered in air at various temperatures (750-950°C for 2h. when the content of bioglass is below 45wt% in the composite, HA decomposes completely and transforms to β-TCP. The main phase in this case are β-TCP, Al2O3 and Ca3(AlO32.When the content of bioglass is above 45wt% in the composite, the decomposition of HA to β-TCP is suppressed and the main phases in this case are Al2O3 and HA, DCP□CaHPO4□ and β-TCP, which almost have the same chemical composition, forming ternary-glass phase, and have better bioactive than pure HA. It can also be found that at the certain addition of bioglass, the higher sintered temperature, the bigger volume density and flexural strength of the composite are, but when the sintered temperature reaches 950°C, they decrease. This modified HA-Al2O3 composites by calcium silicate glass have a much lower sintering temperature and decrease the production cost much.

  8. Synergistic toxic effect of nano-Al2O3 and As(V) on Ceriodaphnia dubia

    International Nuclear Information System (INIS)

    Wang Demin; Hu Ji; Forthaus, Brett E.; Wang Jianmin

    2011-01-01

    Engineered nanomaterials (ENMs) alone could negatively impact the environment and human health. However, their role in the presence of other toxic substances is not well understood. The toxicity of nano-Al 2 O 3 , inorganic As(V), and a combination of both was examined with C. dubia as the model organisms. Bare nano-Al 2 O 3 particles exhibited partial mortality at concentrations of greater than 200 mg/L. When As(V) was also present, a significant amount of As(V) was accumulated on the nano-Al 2 O 3 surface, and the calculated LC 50 of As(V) in the presence of nano-Al 2 O 3 was lower than that it was without the nano-Al 2 O 3 . The adsorption of As(V) on the nano-Al 2 O 3 surface and the uptake of nano-Al 2 O 3 by C. dubia were both verified. Therefore, the uptake of As(V)-loaded nano-Al 2 O 3 was a major reason for the enhanced toxic effect. - Highlights: → Nano-Al 2 O 3 particles alone do not have significant toxic effect on C. dubia. → However, nano-Al 2 O 3 particles significantly enhance the toxicity of As(V). → The uptake of As-loaded nano-Al 2 O 3 by C. dubia plays the major role on the toxicity. - Nano-Al 2 O 3 could accumulate background As(V) and enhance As(V) toxicity on C. dubia through the uptake of As(V)-loaded nano-Al 2 O 3 particles.

  9. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    International Nuclear Information System (INIS)

    Salcedo, K L; Rodriguez, C A; Perez, F A; Riascos, H

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al 2 O 3 ) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  10. Atomic layer deposition α-Al2O3 diffusion barriers to eliminate the memory effect in beta-gamma radioxenon detectors

    International Nuclear Information System (INIS)

    Warburton, W.K.; Wolfgang Hennig; Bertrand, J.A.; George, S.M.; Steven Biegalski

    2013-01-01

    Well designed scintillator detectors, including such examples as ARSA, SAUNA, and XIA's 'PhosWatch', can readily achieve the state of the art radioxenon detection limits required for nuclear explosion monitoring. They are also reliable, robust detectors that do not require cryogenic cooling for operation. All three employ the principle of beta-gamma coincidence detection to reduce background counting rates, using a BC-404 plastic scintillator to detect the betas and a CsI or NaI scintillator to detect the gamma-rays. As a consequence of this commonality of design, all three also display a 'memory effect' arising from the diffusion of Xe into BC-404. Thus, when one sample is pumped out of the detector, a fraction remains behind, embedded in the BC-404, where it artificially raises the signal counting rate for the next sample. While this is not a fatal flaw in scintillator detectors, developing a method to eliminate the memory effect would significantly enhance their utility. This paper reports efforts to develop thin, amorphous Al 2 O 3 films, deposited by atomic layer deposition (ALD) to act as diffusion barriers on the BC-404 surfaces exposed to radioxenon. Using radon as a convenient substitute for Xe, film thicknesses between 2 and 10 nm were originally investigated and found to show a memory effect to varying degrees. A second set of 20 and 30 nm films was then produced, which appeared to completely eliminate the radon memory effect, but, when consequentially tested with radioxenon, were found to exhibit xenon memory effects that were approximately half of the effect found on uncoated BC-404. We draw two conclusions from this result. The first is that it will be necessary to develop an improved method for depositing thicker ALD Al 2 O 3 films at lower temperatures while still retaining high film quality. The second is that, since xenon is required to test for the xenon memory effect, we need a test method that does not require xenon radio-isotopes in order to

  11. Atomic to Nanoscale Investigation of Functionalities of an Al2O3 Coating Layer on a Cathode for Enhanced Battery Performance

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Pengfei; Zheng, Jianming; Zhang, Xiaofeng; Xu, Rui; Amine, Khalil; Xiao, J; Zhang, Ji-Guang; Wang, Chong-Min

    2016-02-09

    Surface coating has been identified as an effective approach for enhancing the capacity retention of layered structure cathode. However, the underlying operating mechanism of such a thin coating layer, in terms of surface chemical functionality and capacity retention, remains unclear. In this work, we use aberration-corrected scanning transmission electron microscopy and high-efficiency spectroscopy to probe the delicate functioning mechanism of an Al2O3 coating layer on a Li1.2Ni0.2Mn0.6O2 cathode. We discovered that in terms of surface chemical function, the Al2O3 coating suppresses the side reaction between the cathode and the electrolyte during battery cycling. At the same time, the Al2O3 coating layer also eliminates the chemical reduction of Mn from the cathode particle surface, therefore preventing the dissolution of the reduced Mn into the electrolyte. In terms of structural stability, we found that the Al2O3 coating layer can mitigate the layer to spinel phase transformation, which otherwise will be initiated from the particle surface and propagate toward the interior of the particle with the progression of battery cycling. The atomic to nanoscale effects of the coating layer observed here provide insight into the optimized design of a coating layer on a cathode to enhance the battery properties.

  12. In situ attenuated total reflection infrared (ATR-IR) study of the adsorption of NO2-, NH2OH, and NH4+ on Pd/Al2O3 and Pt/Al2O3.

    NARCIS (Netherlands)

    Ebbesen, S.D.; Mojet, Barbara; Lefferts, Leonardus

    2008-01-01

    In relation to the heterogeneous hydrogenation of nitrite, adsorption of NO2-, NH4+, and NH2OH from the aqueous phase was examined on Pt/Al2O3, Pd/Al2O3, and Al2O3. None of the investigated inorganic nitrogen compounds adsorb on alumina at conditions presented in this study. NO2-(aq) and NH4+(aq) on

  13. Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator

    Science.gov (United States)

    Dzyadukh, S. M.; Voitsekhovskii, A. V.; Nesmelov, S. N.; Sidorov, G. Yu.; Varavin, V. S.; Vasil'ev, V. V.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.

    2018-03-01

    Admittance of MIS structures based on n( p)- Hg1-xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe layer during epitaxy results in the almost complete disappearance of the hysteresis of electrophysical characteristics of MIS structures based on graded-gap n-HgCdTe for a small range of the voltage variation. For a wide range of the voltage variation, the hysteresis of the capacitance-voltage characteristics appears for MIS structures based on n-HgCdTe with the CdTe/Al2O3 insulator. However, the hysteresis mechanism differs from that in case of a single-layer Al2O3 insulator. For MIS structures based on p-HgCdTe, introduction of an additional CdTe layer does not lead to a significant decrease of the hysteresis phenomena, which may be due to the degradation of the interface properties when mercury leaves the film as a result of low-temperature annealing changing the conductivity type of the semiconductor.

  14. Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure.

    Science.gov (United States)

    Cörekçi, S; Usanmaz, D; Tekeli, Z; Cakmak, M; Ozçelik, S; Ozbay, E

    2008-02-01

    We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements also exhibited that the presence of atomic steps with large lateral step dimension and the surface of samples was smooth. The lateral step sizes are in the range of 100-250 nm. The typical rms values of HEMT structures were found as 0.27, 0.30, and 0.70 nm. HT-AIN buffer layer can have a significant impact on the surface morphology of Al0.3Ga0.7N/Al2O3-HEMT structures.

  15. Thermal stability and fracture toughness of epoxy resins modified with epoxidized castor oil and Al2O3 nanoparticles

    International Nuclear Information System (INIS)

    Zhu, Lin; Jin, Fanlong; Park, Soojin

    2012-01-01

    This study examined the effects of the epoxidized castor oil (ECO) and Al 2 O 3 content on the thermal stability and fracture toughness of the diglycidylether of bisphenol-A (DGEBA)/ECO/Al 2 O 3 ternary composites using a range of techniques. The thermal stability of the composites was decreased by the addition of ECO and Al 2 O 3 nanoparticles. The fracture toughness of the composites was improved significantly by the addition of ECO and Al 2 O 3 nanoparticles. The composite containing 3 wt % Al 2 O 3 nanoparticles showed the maximum flexural strength. Scanning electron microscopy (SEM) revealed tortuous cracks in the DGEBA/ECO/Al 2 O 3 composites, which prevented deformation and crack propagation

  16. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  17. Monitoring the ecotoxicity of γ-Al2O3 and Ni/γ-Al2O3 nanomaterials by means of a battery of bioassays.

    Science.gov (United States)

    Svartz, Gabriela; Papa, Mariana; Gosatti, Marina; Jordán, Marianela; Soldati, Analia; Samter, Paula; Guraya, María M; Pérez Coll, Cristina; Perez Catán, Soledad

    2017-10-01

    The increasing application of nanoparticles (NPs) to a variety of new technologies has become a matter of concern due to the potential toxicity of these materials. Many questions about the fate of NPs in the environment and the subsequent impact on ecosystems need to be answered. The aim of this work was to evaluate the ecotoxicity of two alumina-based nanoceramics, γ-Al2O3 (NC) and Ni/ γ-Al2O3 (NiNC) by means of three different standardized tests: Biochemical Oxygen Demand (BOD5), bioassay with luminescent bacteria (Vibrio fischeri; Microtox), and bioassay on amphibian larvae (Rhinella arenarum) (AMPHITOX). BOD5 values of a very biodegradable mixture (glucose/glutamic acid) decreased with the addition of NiNC(43.8%) and NC (31.6%) with respect to control samples (52.9%). Microtox test results indicated that NiNC presents higher toxicity than NC, with EC50s values of 16.1% and 29.9% respectively; a reduced toxicity was observed, however, in presence of organic matter, thus obtaining EC50s of 37.8% and 19.4%. The results of AMPHITOX test showed a significant increase in the toxicity of both substances over time, the NiNC toxicity being greater than that of NC. The values of 96h-LC50 and 504h-LC50 determined for NiNC were 1.58 and 0.83mg/L, respectively, and 14.5 and 10.5mg/L for NC samples. Amphibian larvae exhibited collapsed cavities, edema, axial flexures, and behavioral alterations as hyperkinesia and reduced movements. These results evidence the vulnerability of wildlife to xenobiotics and the need to develop specific standardized ecotoxicity tests in order to help environmental sustainability and natural species conservation. Copyright © 2017. Published by Elsevier Inc.

  18. Hydrostatic pressing effect on some properties of Al2O3 and Sc2O3 base ceramics

    International Nuclear Information System (INIS)

    Artemova, K.K.; Rudenko, L.A.; Maslova, G.Ya.; Levkovich, N.A.; Orlova, L.A.

    1981-01-01

    Found is the effect of hydrostatic pressing pressure on some physico-mechanical properties of the ceramic on the Al 2 O 3 and Se 2 O 3 base. Mathematical models, describing dependences of the strength of materials made of Al 2 O 3 and Sc 2 O 3 on sintering conditions and on hydrostatic pressing pressure, are plotted. Production regimes on the Al 2 O 3 and Sc 2 O 3 base ceramics with improved properties are optimized [ru

  19. Detection of chemical substances in water using an oxide nanowire transistor covered with a hydrophobic nanoparticle thin film as a liquid-vapour separation filter

    Directory of Open Access Journals (Sweden)

    Taekyung Lim

    2016-08-01

    Full Text Available We have developed a method to detect the presence of small amounts of chemical substances in water, using a Al2O3 nanoparticle thin film covered with phosphonic acid (HDF-PA self-assembled monolayer. The HDF-PA self-assembled Al2O3 nanoparticle thin film acts as a liquid-vapour separation filter, allowing the passage of chemical vapour while blocking liquids. Prevention of the liquid from contacting the SnO2 nanowire and source-drain electrodes is required in order to avoid abnormal operation. Using this characteristic, the concentration of chemical substances in water could be evaluated by measuring the current changes in the SnO2 nanowire transistor covered with the HDF-PA self-assembled Al2O3 nanoparticle thin film.

  20. Room-Temperature Atomic Layer Deposition of Al2 O3 : Impact on Efficiency, Stability and Surface Properties in Perovskite Solar Cells.

    Science.gov (United States)

    Kot, Malgorzata; Das, Chittaranjan; Wang, Zhiping; Henkel, Karsten; Rouissi, Zied; Wojciechowski, Konrad; Snaith, Henry J; Schmeisser, Dieter

    2016-12-20

    In this work, solar cells with a freshly made CH 3 NH 3 PbI 3 perovskite film showed a power conversion efficiency (PCE) of 15.4 % whereas the one with 50 days aged perovskite film only 6.1 %. However, when the aged perovskite was covered with a layer of Al 2 O 3 deposited by atomic layer deposition (ALD) at room temperature (RT), the PCE value was clearly enhanced. X-ray photoelectron spectroscopy study showed that the ALD precursors are chemically active only at the perovskite surface and passivate it. Moreover, the RT-ALD-Al 2 O 3 -covered perovskite films showed enhanced ambient air stability. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Effect of Nano-Al2O3 on the Toxicity and Oxidative Stress of Copper towards Scenedesmus obliquus

    Science.gov (United States)

    Li, Xiaomin; Zhou, Suyang; Fan, Wenhong

    2016-01-01

    Nano-Al2O3 has been widely used in various industries; unfortunately, it can be released into the aquatic environment. Although nano-Al2O3 is believed to be of low toxicity, it can interact with other pollutants in water, such as heavy metals. However, the interactions between nano-Al2O3 and heavy metals as well as the effect of nano-Al2O3 on the toxicity of the metals have been rarely investigated. The current study investigated copper toxicity in the presence of nano-Al2O3 towards Scenedesmus obliquus. Superoxide dismutase activity and concentration of glutathione and malondialdehyde in cells were determined in order to quantify oxidative stress in this study. Results showed that the presence of nano-Al2O3 reduced the toxicity of Cu towards S. obliquus. The existence of nano-Al2O3 decreased the growth inhibition of S. obliquus. The accumulation of copper and the level of oxidative stress in algae were reduced in the presence of nano-Al2O3. Furthermore, lower copper accumulation was the main factor that mitigated copper toxicity with the addition of nano-Al2O3. The decreased copper uptake could be attributed to the adsorption of copper onto nanoparticles and the subsequent decrease of available copper in water. PMID:27294942

  2. Promotion Effect of CaO Modification on Mesoporous Al2O3-Supported Ni Catalysts for CO2 Methanation

    Directory of Open Access Journals (Sweden)

    Wen Yang

    2016-01-01

    Full Text Available The catalysts Ni/Al2O3 and CaO modified Ni/Al2O3 were prepared by impregnation method and applied for methanation of CO2. The catalysts were characterized by N2 adsorption/desorption, temperature-programmed reduction of H2 (H2-TPR, X-ray diffraction (XRD, and temperature-programmed desorption of CO2 and H2 (CO2-TPD and H2-TPD techniques, respectively. TPR and XRD results indicated that CaO can effectively restrain the growth of NiO nanoparticles, improve the dispersion of NiO, and weaken the interaction between NiO and Al2O3. CO2-TPD and H2-TPD results suggested that CaO can change the environment surrounding of CO2 and H2 adsorption and thus the reactants on the Ni atoms can be activated more easily. The modified Ni/Al2O3 showed better catalytic activity than pure Ni/Al2O3. Ni/CaO-Al2O3 showed high CO2 conversion especially at low temperatures compared to Ni/Al2O3, and the selectivity to CH4 was very close to 1. The high CO2 conversion over Ni/CaO-Al2O3 was mainly caused by the surface coverage by CO2-derived species on CaO-Al2O3 surface.

  3. Preparation and Characterization of Liquid Crystalline Polyurethane/Al2O3/Epoxy Resin Composites for Electronic Packaging

    Directory of Open Access Journals (Sweden)

    Shaorong Lu

    2012-01-01

    Full Text Available Liquid crystalline polyurethane (LCPU/Al2O3/epoxy resin composites were prepared by using LCPU as modifier. The mechanical properties, thermal stability, and electrical properties of the LCPU/Al2O3/epoxy resin composites were investigated systematically. The thermal oxidation analysis indicated that LCPU/Al2O3/epoxy resin composites can sustain higher thermal decomposition temperature. Meanwhile, coefficient of thermal expansion (CTE was also found to decrease with addition of LCPU and nano-Al2O3.

  4. Refractories in the Al2O3-ZrO2-SiO2 system

    International Nuclear Information System (INIS)

    Banerjee, S.P.; Bhadra, A.K.; Sircar, N.R.

    1978-01-01

    The effect of addition of ZrO 2 in different proportions in the refractories of the Al 2 O 3 -SiO 2 system was studied. The investigation was confined to two broad ranges of compositions incorporating zirconia (15-30 percent and 80-85 percent) in the Al 2 O 3 -ZrO 2 -SiO 2 system. The overall attainment of properties is dependent upon the mode of fabrication and firing, and bears a relationship with the phase assemblages and the relative proportion thereof. Of the different characteristics, the trend of dissociation of zircon has been found to be specially significant vis-a-vis the temperature of firing and thermal shock resistance. Reassociation of the dissociated products has been ascribed to bring forth improved resistance to thermal spalling. The different products developed during this investigation are considered to be very promising which find useful applications in view of the properties attained by them. (auth.)

  5. Preparation of ZnO-Al2O3 Particles in a Premixed Flame

    DEFF Research Database (Denmark)

    Jensen, Joakim Reimer; Johannessen, Tue; Wedel, Stig

    2000-01-01

    Zinc oxide (ZnO) and alumina (Al2O3) particles are synthesized by the combustion of their volatilized acetylacetonate precursors in a premixed air-methane flame reactor. The particles are characterized by XRD, transmission electron microscopy, scanning mobility particle sizing and by measurement...... temperature and a decreasing precursor vapour pressure. The combustion of precursor mixtures leads to composite particles consisting of zinc aluminate ZnAl2O4 intermixed with either ZnO or Al2O3 phases. The zinc aluminate particles are dendritic aggregates, resembling the alumina particles, and are evidently...... synthesized to the full extent allowed by the overall precursor composition. The addition of even small amounts of alumina to ZnO increases the specific surface area of the composites significantly, for e.g. zinc aluminate particles to approximately 150 m2/g. The gas-to-particle conversion is initiated...

  6. Forming of composites Al2O3-ZrO2 by direct coagulation casting method

    International Nuclear Information System (INIS)

    Tomaszewska-Grzeda, A.; Szafran, M.

    2003-01-01

    The role of enzymes in the DCC process in the decomposition of an appropriately selected substance which results in slow liberation over the whole volume of molecules changing the pH or also in the synthesis of salts modifying the double electric layer. The results of using the urease-urea system and the properties of ceramic casting slips, green samples and after sintering with aluminium oxide and Al 2 O 3 -nZrO 2 composites are presented in the paper. The obtained results of studies show a considerable probability of obtaining in the future of Al 2 O 3 -nZrO 2 composites of good strength parameters resulting from their high degree of thickening, providing that a deagglomeration method of nZrO 2 in the above presented processes will be elaborated. (author)

  7. Determination of the thickness of Al2O3 barriers in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Buchanan, J.D.R.; Hase, T.P.A.; Tanner, B.K.; Hughes, N.D.; Hicken, R.J.

    2002-01-01

    The barrier thickness in magnetic spin-dependent tunnel junctions with Al 2 O 3 barriers has been measured using grazing incidence x-ray reflectivity and by fitting the tunneling current to the Simmons model. We have studied the effect of glow discharge oxidation time on the barrier structure, revealing a substantial increase in Al 2 O 3 thickness with oxidation. The greater thickness of barrier measured using grazing incidence x-ray reflectivity compared with that obtained by fitting current density-voltage to the Simmons electron tunneling model suggests that electron tunneling is localized to specific regions across the barrier, where the thickness is reduced by fluctuations due to nonconformal roughness

  8. Geant4 calculations for space radiation shielding material Al2O3

    Science.gov (United States)

    Capali, Veli; Acar Yesil, Tolga; Kaya, Gokhan; Kaplan, Abdullah; Yavuz, Mustafa; Tilki, Tahir

    2015-07-01

    Aluminium Oxide, Al2O3 is the most widely used material in the engineering applications. It is significant aluminium metal, because of its hardness and as a refractory material owing to its high melting point. This material has several engineering applications in diverse fields such as, ballistic armour systems, wear components, electrical and electronic substrates, automotive parts, components for electric industry and aero-engine. As well, it is used as a dosimeter for radiation protection and therapy applications for its optically stimulated luminescence properties. In this study, stopping powers and penetrating distances have been calculated for the alpha, proton, electron and gamma particles in space radiation shielding material Al2O3 for incident energies 1 keV - 1 GeV using GEANT4 calculation code.

  9. Versatile sputtering technology for Al2O3 gate insulators on graphene

    Directory of Open Access Journals (Sweden)

    Miriam Friedemann, Mirosław Woszczyna, André Müller, Stefan Wundrack, Thorsten Dziomba, Thomas Weimann and Franz J Ahlers

    2012-01-01

    Full Text Available We report a novel, sputtering-based fabrication method of Al2O3 gate insulators on graphene. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm2 V− 1 s−1 in monolayer graphene and 350 cm2 V− 1 s−1 in bilayer graphene, respectively. The mobility decrease can be attributed to the resonant scattering on atomic-scale defects, likely originating from the Al precursor layer evaporated prior to sputtering.

  10. TEM study of a hot-pressed Al2O3-NbC composite material

    Directory of Open Access Journals (Sweden)

    Wilson Acchar

    2005-03-01

    Full Text Available Alumina-based composites have been developed in order to improve the mechanical properties of the monolithic matrix and to replace the WC-Co material for cutting tool applications. Al2O3 reinforced with refractory carbides improves hardness, fracture toughness and wear resistance to values suitable for metalworking applications. Al2O3-NbC composites were uniaxially hot-pressed at 1650 °C in an inert atmosphere and their mechanical properties and microstructures were analyzed. Sintered density, average grain size, microhardness and fracture toughness measurements and microstructural features were evaluated. Results have shown that the mechanical properties of alumina-NbC are comparable to other carbide systems. Microstructural analysis has shown that the niobium carbide particles are mainly located at the grain boundaries of alumina grains, which is an evidence of the "pinning effect", produced by NbC particles.

  11. Bioinspired, Graphene/Al2O3 Doubly Reinforced Aluminum Composites with High Strength and Toughness.

    Science.gov (United States)

    Zhang, Yunya; Li, Xiaodong

    2017-11-08

    Nacre, commonly referred to as nature's armor, has served as a blueprint for engineering stronger and tougher bioinspired materials. Nature organizes a brick-and-mortar-like architecture in nacre, with hard bricks of aragonite sandwiched with soft biopolymer layers. However, cloning nacre's entire reinforcing mechanisms in engineered materials remains a challenge. In this study, we employed hybrid graphene/Al 2 O 3 platelets with surface nanointerlocks as hard bricks for primary load bearer and mechanical interlocking, along with aluminum laminates as soft mortar for load distribution and energy dissipation, to replicate nacre's architecture and reinforcing effects in aluminum composites. Compared with aluminum, the bioinspired, graphene/Al 2 O 3 doubly reinforced aluminum composite demonstrated an exceptional, joint improvement in hardness (210%), strength (223%), stiffness (78%), and toughness (30%), which are even superior over nacre. This design strategy and model material system should guide the synthesis of bioinspired materials to achieve exceptionally high strength and toughness.

  12. Geant4 calculations for space radiation shielding material Al2O3

    Directory of Open Access Journals (Sweden)

    Capali Veli

    2015-01-01

    Full Text Available Aluminium Oxide, Al2O3 is the most widely used material in the engineering applications. It is significant aluminium metal, because of its hardness and as a refractory material owing to its high melting point. This material has several engineering applications in diverse fields such as, ballistic armour systems, wear components, electrical and electronic substrates, automotive parts, components for electric industry and aero-engine. As well, it is used as a dosimeter for radiation protection and therapy applications for its optically stimulated luminescence properties. In this study, stopping powers and penetrating distances have been calculated for the alpha, proton, electron and gamma particles in space radiation shielding material Al2O3 for incident energies 1 keV – 1 GeV using GEANT4 calculation code.

  13. Ag+ implantation in Al2O3, LiNbO3 and quartz

    International Nuclear Information System (INIS)

    Rahmani, M.; Townsend, P.D.

    1989-01-01

    Silver implantation in insulators produces colloids whose growth is a function of ion dose, ion energy, implant temperature and crystal orientation. Data for three materials are compared. Colloid growth is favoured by higher energy implants at temperatures where the silver is mobile. Preferential diffusion along the Z axis of Al 2 O 3 , LiNbO 3 and quartz results in a higher fraction of the implanted silver ions appearing in the form of colloids for Y cut crystals than for those of Z cut. Annealing characteristics also show a strong dependence on crystal cut. For the LiNbO 3 the colloids in Z cut crystals anneal most rapidly whereas for Al 2 O 3 those in Y cut material are least stable, their loss being accompanied by a reduction in F centres. (author)

  14. Fe-Al2O3 nanocomposites prepared by high-energy ball milling

    DEFF Research Database (Denmark)

    Linderoth, Søren; Pedersen, M.S.

    1994-01-01

    Nanocomposites of alpha-Fe and alpha-Al2O3, prepared by high-energy ball milling, exhibit coercivities which are enhanced by about two orders of magnitude with respect to the bulk value. The degree of enhancement depends on the volume fraction (x(upsilon)) of Fe, with a maximum for x(upsilon) alm......Nanocomposites of alpha-Fe and alpha-Al2O3, prepared by high-energy ball milling, exhibit coercivities which are enhanced by about two orders of magnitude with respect to the bulk value. The degree of enhancement depends on the volume fraction (x(upsilon)) of Fe, with a maximum for x...

  15. Pressureless infiltration of porous Al2O3 preform in molten 6061 commercial aluminium alloy

    International Nuclear Information System (INIS)

    Marin, J.; Olivares, L.; Moreno, C.; Ordonez, S.; Martinez, V.

    2001-01-01

    This paper presents an infiltration study of Al 2 O 3 samples containing, approximately, 40% of pores with 1μ average radios. These samples were totally infiltrated with Al-6061 at 1100 deg C for 24 hs in air. Microstructural analysis showed the presence of an alumina matrix infiltrated through mechanisms that combine reactive processes and capillarity, and thus being coherent with the presence of open and closed porosity. The metallographic analysis showed open porosity infiltrated with Al-6061 by capillarity, while SEM micrographs corresponding to this system also showed closed pores filled with metal, that was transported into the ceramic matrix through a reactivate infiltration mechanism. The EDAX analysis for the Al 2 O 3 /Al 6061 system showed areas rich in silicon and copper at the metal-ceramic interface, while the ceramic phase showed the presence of Mg. XRD identified the presence of the MgAl 2 O 4 spinel in the ceramic phase

  16. Positron annihilation study of radiation defects in α-Al2O3

    International Nuclear Information System (INIS)

    Kuramoto, Eiichi; Aono, Yasuhisa; Takenaka, Minoru

    1989-01-01

    Positron annihilation studies have been performed for the radiation-induced defects in α-Al 2 O 3 specimens. Before irradiation polycrystals of α-Al 2 O 3 showed positron annihilation lifetime about 125 psec. But this value was increased by 60 MeV O 6+ ion irradiation to about 155 psec. This is considered to be corresponding to positron lifetime at O-vacancy sites. But, this lifetime disappeared gradually in the period of several months probably because of recombination of vacancies and interstitial atoms at room temperature. On the other hand, it was found that in single crystals positron lifetime before irradiation is between these two values. This is probably due to lack of oxygen atoms in single crystals in the fabrication process and it already has O-vacancies in the matrix before irradiation. (author)

  17. Preparation of nano-sized α-Al2O3 from oil shale ash

    International Nuclear Information System (INIS)

    An, Baichao; Wang, Wenying; Ji, Guijuan; Gan, Shucai; Gao, Guimei; Xu, Jijing; Li, Guanghuan

    2010-01-01

    Oil shale ash (OSA), the residue of oil shale semi-coke roasting, was used as a raw material to synthesize nano-sized α-Al 2 O 3 . Ultrasonic oscillation pretreatment followed by azeotropic distillation was employed for reducing the particle size of α-Al 2 O 3 . The structural characterization at molecular and nanometer scales was performed using X-ray diffraction (XRD), transmission electron microscopy (TEM), respectively. The interaction between alumina and n-butanol was characterized by Fourier transform infrared spectroscopy (FT-IR). The results revealed that the crystalline phase of alumina nanoparticles was regular and the well dispersed alumina nanoparticles had a diameter of 50-80 nm. In addition, the significant factors including injection rate of carbon oxide (CO 2 ), ultrasonic oscillations, azeotropic distillation and surfactant were investigated with respect to their effects on the size of the alumina particles.

  18. Fatigue strength of Al2O3 and Si3N4 ceramics

    International Nuclear Information System (INIS)

    Sonsino, C.M.

    1992-01-01

    Various Al 2 O 3 ceramics and random samples of two Si 3 N 4 ceramics were examined, with all specimens differing in terms of material and manufacturing parameters. Of the Al 2 O 3 ceramics, randomly selected specimens were tested for their banding strength at room temperature, and three specifically selected specimens were tested for their compressive strength at room temperature, at 800 C and at 1200 C. A number of specimen variants were examined by cyclic fatigue tests at room temperature and 800 C, and at 1200 C in one case, the specimens used being slightly notched specimens (α n = 1,02 and 1,08), or more heavily notched speciments (α n = 1.77, 1.90 and 2.24), with bending loads being either cyclic or growing. The Si 3 N 4 specimens were randomly chosen for bending tests and cyclic fatigue tests, at room temperature. (orig./MM) [de

  19. High strength Al–Al2O3p composites: Optimization of extrusion parameters

    DEFF Research Database (Denmark)

    Luan, B.F.; Hansen, Niels; Godfrey, A.

    2011-01-01

    Composite aluminium alloys reinforced with Al2O3p particles have been produced by squeeze casting followed by hot extrusion and a precipitation hardening treatment. Good mechanical properties can be achieved, and in this paper we describe an optimization of the key processing parameters...... on an investigation of their mechanical properties and microstructure, as well as on the surface quality of the extruded samples. The evaluation shows that material with good strength, though with limited ductility, can be reliably obtained using a production route of squeeze casting, followed by hot extrusion....... The parameters investigated are the extrusion temperature, the extrusion rate and the extrusion ratio. The materials chosen are AA 2024 and AA 6061, each reinforced with 30vol.% Al2O3 particles of diameter typically in the range from 0.15 to 0.3μm. The extruded composites have been evaluated based...

  20. Preparation of Mo/Al2O3 Sulfide Catalysts Modified by Ir Nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Cinibulk, Josef; Vít, Zdeněk

    2002-01-01

    Roč. 143, - (2002), s. 443-451 ISSN 0167-2991. [International Symposium Scientific Bases for the Preparation of Heterogeneous Catalysts /8./. Louvain-la-Neuve, 09.09.2002-12.09.2002] R&D Projects: GA AV ČR IAA4072103 Keywords : catalysts modified * sulfide catalysts * Mo/Al2O3 Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.468, year: 2002

  1. BF3/nano-γ-Al2O3 Promoted Knoevenagel Condensation at Room Temperature

    Directory of Open Access Journals (Sweden)

    B. F. Mirjalili

    2015-10-01

    Full Text Available The Knoevenagel condensation of aromatic aldehydes with barbituric acid, dimedone and malononitrile occurred in the presence of BF3/nano-γ-Al2O3 at room temperature in ethanol. This catalyst is characterized by powder X-ray diffraction (XRD, fourier transform infrared spectroscopy (FT-IR, thermal gravimetric analysis (TGA, field emission scanning electron microscopy (FESEM and energy-dispersive X-ray spectroscopy (EDS.

  2. Pair potentials for alumina from ab initio results on the Al2O3 molecule

    International Nuclear Information System (INIS)

    Akdeniz, Z.; Cicek, Z.; Tosi, M.P.

    2000-08-01

    We use results from an ab initio investigation by Chang et al. on energetically low-lying stationary points of the Al 2 O 3 molecule to determine interionic potentials for the Al-O, O-O and Al-Al pairs. Our results are discussed in the perspective of previous studies of the condensed phases of alumina, with special regard to the structure of its molten state. (author)

  3. Magnetic properties of a cermet on the base of Al2O3

    International Nuclear Information System (INIS)

    Tien, C.; Charnaya, E.V.; Gropyanov, V.M.; Mikhailova, I.S.; Wur, C.S.; Abramovich, A.A.

    2000-01-01

    The zero-field-cooled and field-cooled magnetizations, magnetization versus field, and remanent magnetization were measured for a cermet on the base of Al 2 O 3 using a SQUID magnetometer in the temperature range of 2-360 K. It was shown that magnetic properties of the cermet are determined by independent ferromagnetic, paramagnetic and spin-glass contributions. The spin-glass behavior was studied

  4. Bending Strength of EN AC-44200 – Al2O3 Composites at Elevated Temperatures

    OpenAIRE

    Kurzawa A.; Kaczmar J. W.

    2017-01-01

    The paper presents results of bend tests at elevated temperatures of aluminium alloy EN AC-44200 (AlSi12) based composite materials reinforced with aluminium oxide particles. The examined materials were manufactured by squeeze casting. Preforms made of Al2O3 particles, with volumetric fraction 10, 20, 30 and 40 vol.% of particles joined with sodium silicate bridges were used as reinforcement. The preforms were characterised by open porosity ensuring proper infiltration with the EN AC-44200 (A...

  5. Temperature dependence of the Al2O3:C response in medical luminescence dosimetry

    DEFF Research Database (Denmark)

    Edmund, Jens Morgenthaler; Andersen, Claus Erik

    2007-01-01

    is not varied. The RL response only depends on the irradiation temperature. We recommend that calibration should be carried out at the same irradiation temperature at which the measurement is performed (i.e. at body temperature for in vivo measurements). The overall change in the integrated OSL and RL signals...... and detection wavelengths. The reported temperature dependence seems to be a general property of Al2O3:C. (C) 2006 Elsevier Ltd. All rights reserved....

  6. The synthesis of higher alcohols using modified Cu/ZnO/Al@#2@#O@#3@# catalysts

    OpenAIRE

    Slaa, J.C.; Slaa, J.C.; van Ommen, J.G.; Ross, J.R.H.; Ross, J.R.H.

    1992-01-01

    This paper gives a review of research work in the synthesis of higher alcohols over catalysts based on Cu/ZnO/Al2O3, emphasizing three main topics: (i) the effect on selectivity of the addition of several compounds to this catalyst, (ii) the effect on selectivity of the reaction conditions used, and (iii) the reaction network leading to the different products found. Although the use of alkali compounds has been studied most extensively, other compounds, for example those containing manganese,...

  7. Chemical state analysis of oxide thin films using a high resolution double crystal X-ray fluorescence spectrometer

    International Nuclear Information System (INIS)

    Masuda, Hirohisa; Morinaga, Kenji; Ohta, Yoshio.

    1995-01-01

    The chemical state analysis of r.f.-sputtered amorphous oxide thin films was determined by a high resolution X-ray fluorescence spectrometer with double crystals. The polymerization degree of silicate anions in the silicate film was as same as a target (α-Quartz). The oxygen coordination number of Al 3+ ions in the aluminate film was different from a target (α-Al 2 O 3 ), and it was a mixture of 4 and 6 in a spinel-like structure. In CaO-SiO 2 and CaO-Al 2 O 3 films, when the film thickness is thin at the beginning of sputtering, the composition of films are in the shortage of CaO. But when the film thickness become thicker, the composition of films become as same as the target. From the results above, the chemical state of films and their variations with film thickness can be clarified by using the apparatus. (author)

  8. Hole centers in γ-irradiated, oxidized Al2O3

    International Nuclear Information System (INIS)

    Lee, K.H.; Holmberg, G.E.; Crawford, J.H. Jr.

    1976-01-01

    ESR observations of centers with S = 1/2, g approximately equal to 2, S = 1, g approximately equal to 2 have been made at 77 K on oxidized Al 2 O 3 after γ-irradiation at 30 0 C. From the radiation growth data, it is shown that the S = 1/2 centers are precursors of the S = 1 centers. In addition, when the S = 1 centers anneal out at about 110 0 C, the S = 1/2 centers reappear and eventually anneal out at about 260 0 C. Previously Gamble (Gamble, F.T.; Ph.D. Thesis, U. of Connecticut (1963)) and Cox (Cox, R.T.; Ph.D. Thesis, U. of Grenoble (1972) unpublished), respectively, observed S = 1/2 and S = 1 paramagnetic centers in electron-irradiated nominally pure Al 2 O 3 and γ-irradiated, oxidized, titanium-doped Al 2 O 3 . The models proposed for these centers were one hole and two holes trapped on oxygen ions adjacent to Al 3+ vacancies. Our results further substantiate these models. (author)

  9. Chemical quenching of positronium in Fe2O3/Al2O3 catalysts

    International Nuclear Information System (INIS)

    Li, C.; Zhang, H.J.; Chen, Z.Q.

    2010-01-01

    Fe 2 O 3 /Al 2 O 3 catalysts were prepared by solid state reaction method using α-Fe 2 O 3 and γ-Al 2 O 3 nano powders. The microstructure and surface properties of the catalyst were studied using positron lifetime and coincidence Doppler broadening annihilation radiation measurements. The positron lifetime spectrum shows four components. The two long lifetimes τ 3 and τ 4 are attributed to positronium annihilation in two types of pores distributed inside Al 2 O 3 grain and between the grains, respectively. With increasing Fe 2 O 3 content from 3 wt% to 40 wt%, the lifetime τ 3 keeps nearly unchanged, while the longest lifetime τ 4 shows decrease from 96 ns to 64 ns. Its intensity decreases drastically from 24% to less than 8%. The Doppler broadening S parameter shows also a continuous decrease. Further analysis of the Doppler broadening spectra reveals a decrease in the p-Ps intensity with increasing Fe 2 O 3 content, which rules out the possibility of spin-conversion of positronium. Therefore the decrease of τ 4 is most probably due to the chemical quenching reaction of positronium with Fe ions on the surface of the large pores.

  10. Chemical quenching of positronium in Fe 2O 3/Al 2O 3 catalysts

    Science.gov (United States)

    Li, C.; Zhang, H. J.; Chen, Z. Q.

    2010-09-01

    Fe 2O 3/Al 2O 3 catalysts were prepared by solid state reaction method using α-Fe 2O 3 and γ-Al 2O 3 nano powders. The microstructure and surface properties of the catalyst were studied using positron lifetime and coincidence Doppler broadening annihilation radiation measurements. The positron lifetime spectrum shows four components. The two long lifetimes τ3 and τ4 are attributed to positronium annihilation in two types of pores distributed inside Al 2O 3 grain and between the grains, respectively. With increasing Fe 2O 3 content from 3 wt% to 40 wt%, the lifetime τ3 keeps nearly unchanged, while the longest lifetime τ4 shows decrease from 96 ns to 64 ns. Its intensity decreases drastically from 24% to less than 8%. The Doppler broadening S parameter shows also a continuous decrease. Further analysis of the Doppler broadening spectra reveals a decrease in the p-Ps intensity with increasing Fe 2O 3 content, which rules out the possibility of spin-conversion of positronium. Therefore the decrease of τ4 is most probably due to the chemical quenching reaction of positronium with Fe ions on the surface of the large pores.

  11. Characterization of dispersion strengthened copper with 3wt%Al2O3 by mechanical alloying

    Directory of Open Access Journals (Sweden)

    Rajković Višeslava

    2004-01-01

    Full Text Available The copper matrix has been dispersion strengthened with 3wt.%Al2O3 by mechanical alloying. Commercial alumina powder with an average particle size of 0.75mm was used for alloying. The mechanical alloying process was performed in a planetary ball mill up to 20h in air. After milling all powders were treated in H2 at 4000C for 1h, and finally hot pressing was used for compaction (800oC, 3h, Ar. Structure observations revealed a lamellar structure (Al2O3 particles largely restricted to interlamellar planes between adjacent copper lamellae accompanied also by structure refinement. These structural changes were mostly completed in the early stage of milling, and retained after compaction. Micro hardness was found to progressively increase with milling time. So, after 5h of milling the micro hardness of the Cu+3twt%Al2O3 compact was 1540MPa, i.e. 2.5 times greater than for the as-received electrolytic copper powder (638MPa compacted under identical conditions, while after 20h of milling it was 2370 MPa. However after exposing the tested compact at 800oC up to 5h, the achieved hardening effect vanished.

  12. Compactibility of Al/Al2O3 Isotropic Composite with Variation of Holding Time Sintering.

    Directory of Open Access Journals (Sweden)

    Eddy S Siradj

    2008-11-01

    Full Text Available The requirement of component with structural ability, light weight and also strength is increasing base on Metal Matrix Composites (MMCs by aluminum as matrix (AMCs. A structural ability is connected to composites compactibility which is depend on quality of interfacial bounding. Powder metallurgy is one of method to produce composite with powder mixing, compacting and sintering. Volume fractions reinforced and sintering time can influence composites compactibility. Volume fractions reinforced variable can produce different reinforcement effect. Beside that, on sintering enables the formation of new phase during sintering time. In this research, Al/Al2O3 isotropic composites are made with aluminum as matrix and alumina (Al2O3 as reinforced. Volume fraction reinforced used 10%. 20%. 30% and 40%. Sintering temperature and compaction pressure are each 600oC and 15 kN. The tests that applied are compression and metallographic test. The result that obtained is optimum compactibility of Al/Al2O3 composite reached at holding time 2 hour. During sintering, new phase can occur that is aluminum oxides (alumina, with unstable properties. The best volume fraction reinforced and holding time sintering are 40% and 2 hours.

  13. Computer simulation of the structural transformation in liquid Al2O3

    International Nuclear Information System (INIS)

    Vo Van Hoang; Oh, Suhk Kun

    2005-01-01

    We investigate the pressure-induced structural transformation in liquid Al 2 O 3 by a molecular dynamics (MD) method. Simulations were done in the basic cube, under periodic boundary conditions, containing 3000 ions with Born-Mayer-type pair potentials. The structure of the liquid Al 2 O 3 model with a real density at ambient pressure is in good agreement with Landron's experiment. In order to study the structural transformation, seven models of liquid alumina at temperature 2500 K and at densities in the range 2.80-4.5 g cm -3 have been built. The microstructure of Al 2 O 3 systems has been analysed through the pair radial distribution functions, coordination number distributions, interatomic distances and bond-angle distributions. And we found clear evidence of a structural transition in liquid alumina from a tetrahedral to an octahedral network. According to our results, this transformation occurred at densities in the range 3.6-4.5 g cm -3 . We also obtained an anomalous density dependence of the self-diffusion constant in the region of the structural transformation

  14. Improved real-time dosimetry using the radioluminescence signal from Al2O3:C

    International Nuclear Information System (INIS)

    Damkjaer, S.M.S.; Andersen, C.E.; Aznar, M.C.

    2008-01-01

    Carbon-doped aluminum oxide (Al 2 O 3 :C) is a highly sensitive luminescence material for ionizing radiation dosimetry, and it is well established that the optically stimulated luminescence (OSL) signal from Al 2 O 3 :C can be used for absorbed-dose measurements. During irradiation, Al 2 O 3 :C also emits prompt radioluminescence (RL) which allows for real-time dose verification. The RL-signal is not linear in the absorbed dose due to sensitivity changes and the presence of shallow traps. Despite this the signal can be processed to obtain a reliable dose rate signal in real time. Previously a simple algorithm for correcting the RL-signal has been published and here we report two improvements: a better and more stable calibration method which is independent of a reference dose rate and a correction for the effect of the shallow traps. Good agreement was found between reference doses and doses derived from the RL-signal using the new algorithm (the standard deviation of the residuals were ∼2% including phantom positioning errors). The RL-algorithm was found to greatly reduce the influence of shallow traps in the range from 0 to 3 Gy and the RL dose-rate measurements with a time resolution of 0.1 s closely matched dose-rate changes monitored with an ionization chamber

  15. HDPE-Al2O3-HAp composites for biomedical applications: processing and characterizations.

    Science.gov (United States)

    Nath, Shekhar; Bodhak, Subhadip; Basu, Bikramjit

    2009-01-01

    The objective of this work is to demonstrate how the stiffness, hardness, as well as the biocompatibility property, of bioinert high-density polyethylene (HDPE) can be significantly improved by the combined addition of both bioinert and bioactive ceramic fillers. For this purpose, different volume fractions of hydroxyapatite and alumina, limited to a total of 40 vol %, have been incorporated in HDPE matrix. All the hybrid composites and monolithic HDPE were developed under optimized hot pressing condition (130 degrees C, 0.5 h, 92 MPa pressure). The results of the mechanical property characterization reveal that higher elastic modulus (6.2 GPa) and improved hardness (226.5 MPa) could be obtained in the developed HDPE-20 vol %-HAp-20 vol % Al(2)O(3) composite. Under the selected fretting conditions against various counterbody materials (steel, Al(2)O(3), and ZrO(2)), an extremely low COF of (0.07-0.11) and higher wear resistance (order of 10(-6) mm(3)/Nm) are obtained with the HDPE/20 vol % HAp/20 vol % Al(2)O(3) composite in both air and simulated body fluid environment. Importantly, in-vitro cell culture study using L929 fibroblast cells confirms favorable cell adhesion properties in the developed hybrid composite. (c) 2008 Wiley Periodicals, Inc.

  16. Neutron irradiation damage in Al2O3 and Y2O3

    International Nuclear Information System (INIS)

    Clinard, F.W. Jr.; Bunch, J.M.; Ranken, W.A.

    1975-01-01

    Two ceramics under consideration for use in fusion reactors, Al 2 O 3 and Y 2 O 3 , were irradiated in the EBR-II fission reactor at 650, 875, and 1025 0 K to fluences between 2 and 6 x 10 21 n/cm 2 (E greater than 0.1 MeV). Samples evaluated include sapphire, Lucalox, alumina, Y 2 O 3 , and Y 2 O 3 -10 percent ZrO 2 (Yttralox). All Al 2 O 3 specimens swelled significantly (1 to 3 percent), with most of the growth observed in sapphire along the c-axis at the higher temperatures. Al 2 O 3 samples irradiated at 875 to 1025 0 K contained a high density of small aligned ''pores''. Irradiated Y 2 O 3 -based ceramics exhibited dimensional stability and a defect content consisting primarily of unresolved damage and/or dislocation loops. The behavior of these ceramics under irradiation is discussed, and the relevance of fission neutron damage studies to fusion reactor applications is considered. (auth)

  17. Workability and mechanical properties of ultrasonically cast Al–Al2O3 nanocomposites

    International Nuclear Information System (INIS)

    Mula, Suhrit; Pabi, S.K.; Koch, Carl C; Padhi, P.; Ghosh, S.

    2012-01-01

    Workability and mechanical properties of the ultrasonically cast Al–X wt% Al 2 O 3 (X=2, 3.57 and 4.69) metal matrix nanocomposites were reported in the present investigation. The Al–Al 2 O 3 (average size ∼10 nm) composites showed maximum reduction ratios of 2, 1.75 and 1.41 at room temperature, and 8, 7 and 6 at 300 °C. The elastic modulus, nanoindentation hardness, microhardness and Vickers hardness were measured on the as-cast, cold and hot rolled specimens. The tensile properties were also evaluated for the as-cast composites for different wt% of reinforcement. The microstructural examination was done by optical, scanning and transmission electron microscopy. The strength and workability of the nanocomposites were discussed in the light of dislocation/particle interaction, particle size and its concentration, inter-particle spacing and working temperature. 2 wt% of Al 2 O 3 reinforcement showed better combination of workability and mechanical properties possibly due to better distribution of particulates in the matrix.

  18. Size-dependent magnetic properties of FeGaB/Al2O3 multilayer micro-islands

    Science.gov (United States)

    Wang, X.; Gao, Y.; Chen, H.; Chen, Y.; Liang, X.; Lin, W.; Sun, N. X.

    2018-06-01

    Recently, micrometer-size patterned magnetic materials have been widely used in MEMS devices. However, the self-demagnetizing action is significantly influencing the performance of the magnetic materials in many MEMS devices. Here, we report an experimental study on the magnetic properties of the patterned micro-scale FeGaB/Al2O3 multilayers. Ferromagnetic hysteresis loop, ferromagnetic resonance (FMR), permeability and domain behavior have been demonstrated by complementary techniques. Magnetic annealing was used to enhance the performance of magnetic multilayers. The comparisons among micro-islands with different sizes in the range of 200 μm ∼ 500 μm as well as full film show a marked influence of size-effect, the exchange coupling effect, and the different domain structures inside the islands.

  19. Tuning the sapphire EFG process to the growth of Al2O3/YAG/ZrO2:Y eutectic

    Science.gov (United States)

    Carroz, L.; Duffar, T.

    2018-05-01

    In this work, a model is proposed, in order to analytically study the working point of the Edge defined Film-fed Growth (EFG) pulling of crystal plates. The model takes into account the heat equilibrium at the interface and the pressure equilibrium across the meniscus. It is validated on an industrial device dedicated to the pulling of sapphire ribbons. Then, the model is applied to pulling ceramic alloy plates, of the ternary eutectic Al2O3/YAG/ZrO2:Y. This allowed understanding the experimental difficulties of pulling this new material and suggested improvements of the control software. From these results, pulling net shaped ceramic alloy plates was successful in the same industrial equipment as used for sapphire.

  20. Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3

    International Nuclear Information System (INIS)

    Hinkle, Chris; Lucovsky, Gerry

    2003-01-01

    Remote plasma-assisted nitridation or RPN is demonstrated to be a processing pathway for nitridation of Zr and Hf silicate alloys, and for Al 2 O 3 , as well. The dependence of nitrogen incorporation on the process pressure is qualitatively similar to what has been reported for the plasma-assisted nitridation of SiO 2 , the lower the process pressure the greater the nitrogen incorporation in the film. The increased incorporation of nitrogen has been correlated with the penetration of the plasma-glow into the process chamber, and the accompanying increase in the concentration of N 2 + ions that participate in the reactions leading to bulk incorporation. The nitrogen incorporation as been studied by Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and X-ray absorption spectroscopy (XAS)

  1. Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control

    Science.gov (United States)

    Hayakawa, Naoki; Muneta, Iriya; Ohashi, Takumi; Matsuura, Kentaro; Shimizu, Jun’ichi; Kakushima, Kuniyuki; Tsutsui, Kazuo; Wakabayashi, Hitoshi

    2018-04-01

    Molybdenum disulfide (MoS2) among two-dimensional semiconductor films is promising for spintronic devices because it has a longer spin-relaxation time with contrasting spin splitting than silicon. However, it is difficult to fabricate integrated circuits by the widely used exfoliation method. Here, we investigate the contact characteristics in the Fe/Al2O3/sputtered-MoS2 system with various thicknesses of the Al2O3 film. Current density increases with increasing thickness up to 2.5 nm because of both thermally-assisted and direct tunneling currents. On the other hand, it decreases with increasing thickness over 2.5 nm limited by direct tunneling currents. These results suggest that the Schottky barrier width can be controlled by changing thicknesses of the Al2O3 film, as supported by calculations. The reduction of conductance mismatch with this technique can lead to highly efficient spin injection from iron into the MoS2 film.

  2. Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts

    Science.gov (United States)

    Guzmán-Caballero, D. E.; Quevedo-López, M. A.; De la Cruz, W.; Ramírez-Bon, R.

    2018-03-01

    SnO p-type was used as active layer to fabricate thin film transistors (TFTs) through photolithography and dry etching processes. The SnO p-type thin films (25 nm) were deposited by DC reactive sputtering with variable oxygen (O2) flow rate to then be annealed in air at 250 ◦C. Al2O3 gate dielectric (15 nm) was deposited by atomic layer deposition. Hall measurements showed p-type carrier concentration (N h ) of around 1 × 1018 cm-3 and Hall mobilities (μ Hall) between 0.35 and 2.64 cm2 V-1 s-1, depending on the O2 flow rate during deposition. The hole transport was dominated by variable-range hopping conduction. A change in the preferred crystalline orientation in the SnO films from (101) to (110) was associated with the increase in μ Hall. In addition, Raman vibrational modes at 110 and 209 cm-1 of polycrystalline SnO films showed certain dependence with the grain orientation. The SnO-based TFTs showed p-type behavior with low threshold voltages (V T ) and low sub threshold swing (SS) in the range from 1.76 to 3.50 V and 1.63 to 3.24 V/dec., respectively. The TFTs mobilities in the saturation regime (μ sat) were in the range of 0.12 and 1.32 cm2 V-1 s-1. The current on/off ratio (I ON/I OFF) was in the order of 102, approximately. The large values of the interface trap density (D IT) contributed to the high I OFF and the low I ON/I OFF of the TFTs.

  3. Evaluating the toughness of APS and HVOF-sprayed Al2O3-ZrO2-coatings by in-situ- and macroscopic bending

    Czech Academy of Sciences Publication Activity Database

    Kiilakoski, J.; Mušálek, Radek; Lukáč, František; Koivuluoto, H.; Vuoristo, P.

    2018-01-01

    Roč. 38, č. 4 (2018), s. 1908-1918 ISSN 0955-2219 R&D Projects: GA ČR GB14-36566G Institutional support: RVO:61389021 Keywords : Thermal spray * Al2O3-ZrO2 * Toughening * Fracture * Mechanical testing Subject RIV: JK - Corrosion ; Surface Treatment of Materials OBOR OECD: Coating and films Impact factor: 3.411, year: 2016 https://www.sciencedirect.com/science/article/pii/S0955221917308051

  4. Phase transition and thermal expansion studies of alumina thin films prepared by reactive pulsed laser deposition.

    Science.gov (United States)

    Balakrishnan, G; Thirumurugesan, R; Mohandas, E; Sastikumar, D; Kuppusami, P; Songl, J I

    2014-10-01

    Aluminium oxide (Al2O3) thin films were deposited on Si (100) substrates at an optimized oxygen partial pressure of 3 x 10(-3) mbar at room temperature by pulsed laser deposition (PLD). The films were characterized by high temperature X-ray diffraction (HTXRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The HTXRD pattern showed the cubic y-Al2O3 phase in the temperature range 300-973 K. At temperatures ≥ 1073 K, the δ and θ-phases of Al2O3 were observed. The mean linear thermal expansion coefficient and volume thermal expansion coefficient of γ-Al2O3 was found to be 12.66 x 10(-6) K(-1) and 38.87 x 10(-6) K(-1) in the temperature range 300 K-1073 K. The field emission scanning electron microscopy revealed a smooth and structureless morphology of the films deposited on Si (100). The atomic force microscopy study indicated the increased crystallinity and surface roughness of the films after annealing at high temperature.

  5. Silicon passivation and tunneling contact formation by atomic layer deposited Al2O3/ZnO stacks

    NARCIS (Netherlands)

    Garcia-Alonso Garcia, D.; Smit, S.; Bordihn, S.; Kessels, W.M.M.

    2013-01-01

    The passivation of Si by Al2O3/ZnO stacks, which can serve as passivated tunneling contacts or heterojunctions in silicon photovoltaics, was investigated. It was demonstrated that stacks with Al2O3 thicknesses >3 nm lead to lower surface recombination velocities (Seff,max <4 cm s-1) on n- and p-type

  6. WOx supported on γ-Al2O3 with different morphologies as model catalysts for alkanol dehydration

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Dachuan; Wang, Huamin; Kovarik, Libor; Gao, Feng; Wan, Chuan; Hu, Jian Z.; Wang, Yong

    2018-04-21

    The distinctive morphological and surface characteristics of platelet-like γ-Al2O3 were compared to a regular, commercial γ-Al2O3. γ-Al2O3 platelets display dominant (110) surface facets and higher densities of coordinative unsaturated penta-coordinate Al3+ (Al3+penta) sites than regular γ-Al2O3, as measured by solid-state magic-angle spinning nuclear magnetic resonance spectroscopy (MAS NMR). Such Al3+penta sites are also the preferred surface anchoring sites for tungsten oxide (WOx) species consistent with NMR analysis indicating that these sites are consumed upon WOx adsorption. The higher Al3+penta density on γ-Al2O3 platelets leads to greater WOx dispersion (or smaller WOx clusters), as demonstrated by scanning transmission electron microscopy and ultraviolet–visible spectroscopy, and WOx species at intermediate WOx surface concentration are the most active for the probe reaction of 2-butanol dehydration. WOx on γ-Al2O3 platelets approaches the highest turnover rates at higher surface densities than WOx on regular γ-Al2O3, yet with similar highest rate values for both series of catalysts. This indicates that different Al2O3 supports mainly affect the dispersion of supported WOx rather than the intrinsic reactivity of individual WOx clusters with similar size.

  7. Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS—HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yao; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Xue Jun-Shuai; Ma Xiao-Hua; Wang Chong; Yang Lin-An; Zhang Jin-Feng; Kuang Xian-Wei; Yang Cui

    2011-01-01

    We present an AlInN/AlN/GaN MOS—HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al 2 O 3 dielectric layer and a 0.3 μm field-plate (FP)-MOS—HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS—HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS—HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance—voltage (C—V) curve of the FP-MOS—HEMT demonstrates a high-quality interface of Al 2 O 3 /AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μm and a negligible double-pulse current collapse is achieved in the FP-MOS—HEMT. This is attributed to the adoption of an ultra-thin Al 2 O 3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al 2 O 3 FP-MOS—HEMT to deliver high currents and power densities in high power microwave technologies. (rapid communication)

  8. Characteristics of Cu–Al2O3 composites of various starting particle size obtained by high-energy milling

    Directory of Open Access Journals (Sweden)

    VIŠESLAVA RAJKOVIĆ

    2009-05-01

    Full Text Available The powder Cu– Al2O3 composites were produced by high-energy milling. Various combinations of particle size and mixtures and approximately constant amount of Al2O3 were used as the starting materials. These powders were separately milled in air for up to 20 h in a planetary ball mill. The copper matrix was reinforced by internal oxidation and mechanical alloying. During the milling, internal oxidation of pre-alloyed Cu-2 mass %-Al powder generated 3.7 mass % Al2O3 nano-sized particles finely dispersed in the copper matrix. The effect of different size of the starting copper and Al2O3 powder particles on the lattice parameter, lattice distortion and grain size, as well as on the size, morphology and microstructure of the Cu– Al2O3 composite powder particles was studied.

  9. NMR Spectroscopy of the Hydrated Layer of Composite Particles Based on Nanosized Al2O3 and Vitreous Humor

    Science.gov (United States)

    Turov, V. V.; Gerashchenko, I. I.; Markina, A. I.

    2013-11-01

    The hydrated layer of composite particles prepared using Al2O3 and cattle vitreous humor was investigated using NMR spectroscopy. It was found that water bound to Al2O3 nanoparticles was present in the form of clusters with different degrees of association and energies of interaction with the surface. Water bound to the surface of the Al2O3/vitreous humor composite became more uniform upon immobilization of vitreous humor components on the surface of the Al2O3. With this, the clusters of adsorbed water had characteristics that were close to those found in air and weakly polar CHCl3 media. Addition of polar CH3CN led to the formation of very small water clusters. PMR spectra of the surface of the Al2O3/vitreous humor composite in the presence of trifluoroacetic acid differentiated four types of hydrated structures that differed in the degree of water association.

  10. Synthesis and characterization of high volume fraction Al-Al2O3 nanocomposite powders by high-energy milling

    International Nuclear Information System (INIS)

    Prabhu, B.; Suryanarayana, C.; An, L.; Vaidyanathan, R.

    2006-01-01

    Al-Al 2 O 3 metal matrix composite (MMC) powders with volume fractions of 20, 30, and 50% Al 2 O 3 were synthesized by high-energy milling of the blended component powders. The particle sizes of Al 2 O 3 studied were 50 nm, 150 nm, and 5 μm. A uniform distribution of the Al 2 O 3 reinforcement in the Al matrix was successfully obtained after milling the powders for a period of 20 h at a ball-to-powder ratio of 10:1 in a SPEX mill. The uniform distribution of Al 2 O 3 in the Al matrix was confirmed by characterizing these nanocomposite powders by scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), X-ray mapping, and X-ray diffraction (XRD) techniques

  11. Strength and thermal stability of Cu-Al2O3 composite obtained by internal oxidation

    Directory of Open Access Journals (Sweden)

    Jovanovic, M. T.

    2010-12-01

    Full Text Available The objective of the work is to study the effects of the high-energy milling on strengthening, thermal stability and electrical conductivity of Cu-Al2O3 composite. The prealloyed copper powders, atomized in inert gas and containing 3 wt. % Al, were milled up to 20 h in the planetary ball mill to oxidize in situ aluminium with oxygen from the air. Composite compacts were obtained by hot-pressing in an argon atmosphere at 800 °C for 3 h under the pressure of 35MPa. The microstructural characterization was performed by the optical microscope, scanning electron microscope (SEM, transmission electron microscope (TEM and X-ray diffraction analysis (XRD. The microhardness, electrical conductivity and density measurements were also carried out. The effect of internal oxidation and high-energy milling on strengthening of Cu-Al2O3 composite was significant, The increase of the microhardness of composite compacts (292 HV is almost threefold comparing to compacts processed from the as-received Cu-3 wt. % Al powder (102 HV. The grain size of Cu-Al2O3 compacts processed from 5 and 20 h-milled powders was 75 and 45 nm, respectively. The small increase in the grain size and the small microhardness drop indicate the high thermal stability of Cu-Al2O3 composite during high-temperature exposure at 800 °C.El objetivo del trabajo es el estudio de los efectos de la pulverización con altas energías sobre la resistencia, estabilidad térmica y conductividad eléctrica del compuesto Cu-Al2O3. El polvo pre-aleado de cobre, obtenido a través de la atomización con gas inerte y con un contenido de 3wt. % Al, se molió durante 20 h en el molino planetario de bolas dando lugar a la oxidación in situ del aluminio con el oxígeno del aire. El compuesto compactado se ha obtenido mediante prensado en caliente en atmósfera de argón a 800 °C durante 3 h y a una presión de 35MPa. La caracterización microestructural se hizo a través de microscopia óptica, microscopia

  12. UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

    Directory of Open Access Journals (Sweden)

    Schutz-Kuchly T.

    2014-01-01

    Full Text Available Experimental work on laser induced ablation of thin Al2O3(20 nm/SiN:H (70 nm and a-Si:H (20 nm/SiN:H (70 nm stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are efficiently removed using a femtosecond infra-red laser (1030 nm wavelength, 300 fs pulse duration but the underlying silicon surface is highly damaged in a ripple-like pattern. This collateral effect is almost completely avoided using a nanosecond ultra-violet laser (248 nm wavelength, 50 ns pulse duration, however a-Si:H flakes and Al2O3 lace remain after ablation process.

  13. High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

    Science.gov (United States)

    Guo, Hao; Zhang, Xiong; Chen, Hongjun; Zhang, Peiyuan; Liu, Honggang; Chang, Hudong; Zhao, Wei; Liao, Qinghua; Cui, Yiping

    2013-09-09

    GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively.

  14. Pengaruh komposisi komposit al2o3/ysz dan variasi feed rate terhadap ketahanan termal dan kekuatan lekat pada Ysz-al2o3/ysz double layer tbc

    Directory of Open Access Journals (Sweden)

    Parindra Kusriantoko

    2014-03-01

    Full Text Available TBC (Thermal Barrier Coating dengan YSZ-Al2O3/YSZ top coat (TCdan MCrAlY sebagai bond coat (BC yang selanjutnya disebut sebagai YSZ-Al2O3/YSZ double layer TBC dibuat dengan menggunakan metode flame spray.Hasil pelapisan sebelum dan sesudah diuji termal dikarakterisasi menggunakan SEM, EDX dan XRD.Dari hasil penelitian didapatkan bahwa semakin tinggi powder feed rate akan berpengaruh pada morfologi permukaan lapisan. Feed rate makin rendah menyebabkan struktur yang cenderung kasar dan tidak padat dan cenderung berporos. Lapisan komposit Al2O3/YSZ juga sangat berpengaruh pada pertumbuhan TGO (Thermally Grown Oxide setelah dilakukan uji termal, dimana komposisi paling bagus dengan pertumbuhan TGO paling rendah adalah 15%Al2O3/8YSZ. Hasil pengujian TGA menunjukkan semua sampel mulai teroksidasi pada temperatur 1000-1030oC dan didapatkan sampel paling stabil adalah 15% Al2O3/8YSZ 14 dan 20 gr/min. Dari pengujian XRD sampel yang memiliki fasa yang paling stabil adalah 15%Al2O3/8YSZ dengan fasa t-ZrO2 dan m-ZrO2. Dari pengujian Thermal Torch dan Pull Off komposisi 15%Al2O3/8YSZjuga memiliki ketahanan terhadap pengerusakan yang paling baik dan kelekatan yang baik sebesar 10 MPa.

  15. Effect of 10Ce-TZP/Al2O3 nanocomposite particle amount and sintering temperature on the microstructure and mechanical properties of Al/(10Ce-TZP/Al2O3) nanocomposites

    International Nuclear Information System (INIS)

    Soltani, N.; Pech-Canul, M.I.; Bahrami, A.

    2013-01-01

    Highlights: • Increasing the 10Ce-TZP/Al 2 O 3 content up to 7 wt.%, enhanced composites’ hardness. • Significant enhancement in compressive strength is obtained with 7% 10Ce-TZP/Al 2 O 3 . • Sintering at 450 °C, hardness and compressive strength are higher than at 400 °C. - Abstract: A zirconia/alumina nanocomposite stabilized with cerium oxide (Ce-TZP/Al 2 O 3 nanocomposite) can be a good substitute as reinforcement in metal matrix composites. In the present study, the effect of the amount of 10Ce-TZP/Al 2 O 3 particles on the microstructure and properties of Al/(10Ce-TZP/Al 2 O 3 ) nanocomposites was investigated. For this purpose, aluminum powders with average size of 30 μm were ball-milled with 10Ce-TZP/Al 2 O 3 nanocomposite powders (synthesized by aqueous combustion) in varying amounts of 1, 3, 5, 7, and 10 wt.%. Cylindrical-shape samples were prepared by pressing the powders at 600 MPa for 60 min while heating at 400–450 °C. The specimens were then characterized by scanning and transmission electron microscopy (SEM and TEM) in addition to different physical and mechanical testing methods in order to establish the optimal processing conditions. The highest compression strength was obtained in the composite with 7 wt.% (10Ce-TZP/Al 2 O 3 ) sintered at 450 °C

  16. Testing of Flame Sprayed Al2O3 Matrix Coatings Containing TiO2

    Directory of Open Access Journals (Sweden)

    Czupryński A.

    2016-09-01

    Full Text Available The paper presents the results of the properties of flame sprayed ceramic coatings using oxide ceramic materials coating of a powdered aluminium oxide (Al2O3 matrix with 3% titanium oxide (TiO2 applied to unalloyed S235JR grade structural steel. A primer consisting of a metallic Ni-Al-Mo based powder has been applied to plates with dimensions of 5×200×300 mm and front surfaces of Ø40×50 mm cylinders. Flame spraying of primer coating was made using a RotoTec 80 torch, and an external coating was made with a CastoDyn DS 8000 torch. Evaluation of the coating properties was conducted using metallographic testing, phase composition research, measurement of microhardness, substrate coating adhesion (acc. to EN 582:1996 standard, erosion wear resistance (acc. to ASTM G76-95 standard, and abrasive wear resistance (acc. to ASTM G65 standard and thermal impact. The testing performed has demonstrated that flame spraying with 97% Al2O3 powder containing 3% TiO2 performed in a range of parameters allows for obtaining high-quality ceramic coatings with thickness up to ca. 500 µm on a steel base. Spray coating possesses a structure consisting mainly of aluminium oxide and a small amount of NiAl10O16 and NiAl32O49 phases. The bonding primer coat sprayed with the Ni-Al-Mo powder to the steel substrate and external coating sprayed with the 97% Al2O3 powder with 3% TiO2 addition demonstrates mechanical bonding characteristics. The coating is characterized by a high adhesion to the base amounting to 6.5 MPa. Average hardness of the external coating is ca. 780 HV. The obtained coatings are characterized by high erosion and abrasive wear resistance and the resistance to effects of cyclic thermal shock.

  17. Electrochemical impedance spectroscopy and corrosion behaviour of Al2O3-Ni nano composite coatings

    International Nuclear Information System (INIS)

    Ciubotariu, Alina-Crina; Benea, Lidia; Lakatos-Varsanyi, Magda; Dragan, Viorel

    2008-01-01

    In this paper, the results on the electrochemical impedance spectroscopy and corrosion properties of electrodeposited nanostructured Al 2 O 3 -Ni composite coatings are presented. The nanocomposite coatings were obtained by codeposition of alumina nanoparticles (13 nm) with nickel during plating process. The coating thickness was 50 μm on steel support and an average of nano Al 2 O 3 particles inside of coatings at 15 vol.% was present. The structure of the coatings was investigated by scanning electron microscopy (SEM). It has been found that the codeposition of Al 2 O 3 particles with nickel disturbs the nickel coating's regular surface structure. The electrochemical behavior of the coatings in the corrosive solutions was investigated by polarization potentiodynamic and electrochemical impedance spectroscopy methods. As electrochemical test solutions 0.5 M sodium chloride and 0.5 M potassium sulphate were used in a three electrode open cell. The corrosion potential is shifted to more negative values for nanostructured coatings in 0.5 M sodium chloride. The polarization resistance in 0.5 M sodium chloride decreases in 24 h, but after that increases slowly. In 0.5 M potassium sulphate solution the polarization resistance decreases after 2 h and after 30 h of immersion the polarization resistance is higher than that of the beginning value. The corrosion rate calculated by polarization potentiodynamic curves obtained after 30 min from immersion in solution is smaller for nanostructured coatings in 0.5 M potassium sulphate (4.74 μm/year) and a little bit bigger in 0.5 M sodium chloride (5.03 μm/year)

  18. Microstructural Investigations of Al2O3 Scale Formed on FeCrAl Steel during High Temperature Oxidation in SO2

    International Nuclear Information System (INIS)

    Homa, M.; Zurek, Z.; Morgiel, B.; Zieba, P.; Wojewoda, J.

    2008-01-01

    The results of microstructure observations of the Al 2 O 3 scale formed on a Fe-Cr-Al steel during high temperature oxidation in the SO 2 atmosphere are presented. Morphology of the scale has been studied by SEM and TEM techniques. Phase and chemical compositions have been studied by EDX and XRD techniques. The alumina oxide is a primary component of the scale. TEM observations showed that the scale was multilayer. The entire surface of the scale is covered with 'whiskers, which look like very thin platelets and have random orientation. The cross section of a sample shows, that the 'whiskers' are approximately 2 μm high, however the compact scale layer on which they reside is 0.2 μm thick. The scale layer was composed mainly of small equiaxial grains and a residual amount of small columnar grains. EDX analysis of the scale surface showed that the any sulfides were found in the formed outer and thin inner scale layer. A phase analysis of the scale formed revealed that it is composed mainly of the θ-Al 2 O 3 phase and a residual amount of α-Al 2 O 3

  19. Direct bonding of ALD Al2O3 to silicon nitride thin films

    DEFF Research Database (Denmark)

    Laganà, Simone; Mikkelsen, E. K.; Marie, Rodolphe

    2017-01-01

    microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N4 (stoichiometric nitride) thin films annealed from room temperature up......O3 can be bonded to. Preliminary tests demonstrating a well-defined nanochannel system with-100 nm high channels successfully bonded and tests against leaks using optical fluorescence technique and transmission electron microscopy (TEM) characterization of liquid samples are also reported. Moreover...

  20. Low temperature bonding of heterogeneous materials using Al2O3 as an intermediate layer

    DEFF Research Database (Denmark)

    Sahoo, Hitesh Kumar; Ottaviano, Luisa; Zheng, Yi

    2018-01-01

    Integration of heterogeneous materials is crucial for many nanophotonic devices. The integration is often achieved by bonding using polymer adhesives or metals. A much better and cleaner option is direct wafer bonding, but the high annealing temperatures required make it a much less attractive...... atomic layer deposited Al2O3 an excellent choice for the intermediate layer. The authors have optimized the bonding process to achieve a high interface energy of 1.7 J/m2 for a low temperature annealing of 300 °C. The authors also demonstrate wafer bonding of InP to SiO2 on Si and GaAs to sapphire using...

  1. The anomalous behaviour of Ag-Al2O3 Cermet electroformed devices

    International Nuclear Information System (INIS)

    Khan, M.S.R.

    2003-06-01

    Cermet coating consisting of silver particles in an aluminium oxide matrix were prepared on glass substrates by vacuum deposition. Variation of the circulating current with potential difference was obtained in evaporated Al/Ag-Al 2 O 3 /Cu sandwich structures, 100 to 200 nm thick containing 10 wt % Ag. It was observed that the investigated sandwich structures exhibit anomalous behaviour such as electroforming with Voltage-Controlled-Negative Resistance (VCNR) in vacuo of ∼ 4 x 10 -6 torr. The formed characteristics were explained on the basis of filamentary model. (author)

  2. Low Leakage Superconducting Tunnel Junctions with a Single Crystal Al2O3 Barrier

    Science.gov (United States)

    2016-03-30

    10-6 Torr ). In this low-pressure oxygen environment, Auger electron spectroscopy (AES) study shows that while oxidation of the base layer is...three layers were grown in situ in an ultra high vacuum (UHV) system with a nominal base pressure of ~1×10-10 Torr . First, a 120~150 nm thick...high-temperature annealing in order to crystallize the amorphous AlOx into a single-crystal Al2O3. After the sample was cooled to room temperature

  3. Thermal conductivity measurements of PTFE and Al2O3 ceramic at sub-Kelvin temperatures

    Science.gov (United States)

    Drobizhev, Alexey; Reiten, Jared; Singh, Vivek; Kolomensky, Yury G.

    2017-07-01

    The design of low temperature bolometric detectors for rare event searches necessitates careful selection and characterization of structural materials based on their thermal properties. We measure the thermal conductivities of polytetrafluoroethylene (PTFE) and Al2O3 ceramic (alumina) in the temperature ranges of 0.17-0.43 K and 0.1-1.3 K, respectively. For the former, we observe a quadratic temperature dependence across the entire measured range. For the latter, we see a cubic dependence on temperature above 0.3 K, with a linear contribution below that temperature. This paper presents our measurement techniques, results, and theoretical discussions.

  4. Structure and phase transitions at the interface between α-Al2O3 and Pt

    Science.gov (United States)

    Ophus, Colin; Santala, Melissa K.; Asta, Mark; Radmilovic, Velimir

    2013-06-01

    The structure and thermodynamics of interfaces between (111) Pt and the basal plane of α-Al2O3 have been studied through a combination of high-resolution electron microscopy and first-principles calculations. Within the framework of ab initio thermodynamics the structure and excess free energies are calculated as functions of temperature (T) and oxygen partial pressure (PO2), for three competing interface terminations. Comparisons between measurements and calculations establish that the interface is oxygen terminated, and a structural phase transition is predicted in the range of experimentally accessible T and PO2 from the calculated interfacial free energies.

  5. Guiding of low-energy electrons by highly ordered Al2 O3 nanocapillaries

    DEFF Research Database (Denmark)

    Milosavljević, A.R.; Víkor, G.; Pešić, Z.D.

    2007-01-01

    We report an experimental study of guided transmission of low-energy (200-350 eV) electrons through highly ordered Al2 O3 nanocapillaries with large aspect ratio (140 nm diameter and 15 μm length). The nanochannel array was prepared using self-ordering phenomena during a two-step anodization...... process of a high-purity aluminum foil. The experimental results clearly show the existence of the guiding effect, as found for highly charged ions. The guiding of the electron beam was observed for tilt angles up to 12°. As seen for highly charged ions, the guiding efficiency increases with decreasing...

  6. Investigation on structural, optical and electrical properties of polythiophene-Al2O3 composites

    Science.gov (United States)

    Vijeth, H.; Yesappa, L.; Niranjana, M.; Ashokkumar, S. P.; Devendrappa, H.

    2018-05-01

    The polythiophene (PTH) and polythiophene-Al2O3 composites prepared by in situ chemical polymerisation in the presence of anionic surfactant camphor sulfonic acid (CSA). The formation of composite is confirmed by X-ray Diffraction (XRD) and Energy Dispersive X-ray spectroscopy (EDX) analysis. The surface morphology was studied using Field Emission Electron Microscopy (FESEM). Optical properties was studied using UV-visible spectroscopy, it observed decrease in the band gap reveals material has potential application in optical devices. The dielectric constant and AC conductivity of composite have been studied for different temperature in the frequency range 1 kHz -1 MHz.

  7. Kinetics of the electronic center annealing in Al2O3 crystals

    Science.gov (United States)

    Kuzovkov, V. N.; Kotomin, E. A.; Popov, A. I.

    2018-04-01

    The experimental annealing kinetics of the primary electronic F, F+ centers and dimer F2 centers observed in Al2O3 produced under neutron irradiation were carefully analyzed. The developed theory takes into account the interstitial ion diffusion and recombination with immobile F-type and F2-centers, as well as mutual sequential transformation with temperature of three types of experimentally observed dimer centers which differ by net charges (0, +1, +2) with respect to the host crystalline sites. The relative initial concentrations of three types of F2 electronic defects before annealing are obtained, along with energy barriers between their ground states as well as the relaxation energies.

  8. Hydrogen Production via Glycerol Dry Reforming over La-Ni/Al2O3 Catalyst

    Directory of Open Access Journals (Sweden)

    Kah Weng Siew

    2013-12-01

    Full Text Available Glycerol (a bio-waste generated from biodiesel production has been touted as a promising bio-syngas precursor via reforming route. Previous studies have indicated that carbon deposition is the major performance-limiting factor for nickel (Ni catalyst during glycerol steam reforming. In the current paper, dry (CO2-reforming of glycerol, a new reforming route was carried out over alumina (Al2O3-supported non-promoted and lanthanum-promoted Ni catalysts. Both sets of catalysts were synthesized via wet co-impregnation procedure. The physicochemical characterization of the catalyst showed that the promoted catalyst possessed smaller metal crystallite size, hence higher metal dispersion compared to the virgin Ni/Al2O3 catalyst. This was also corroborated by the surface images captured by the FESEM analysis. In addition, BET surface area measurement gave 92.05m²/g for non-promoted Ni catalyst whilst promoted catalysts showed an average of 1 to 6% improvement depending on the La loading. Reaction studies at 873 K showed that glycerol dry reforming successfully produced H2 with glycerol conversion and H2 yield that peaked at 9.7% and 25% respectively over 2wt% La content. The optimum catalytic performance by 2%La-Ni/Al2O3 can be attributed to the larger BET surface area and smaller crystallite size that ensured accessibility of active catalytic sites.  © 2013 BCREC UNDIP. All rights reservedReceived: 12nd May 2013; Revised: 7th October 2013; Accepted: 16th October 2013[How to Cite: Siew, K.W., Lee, H.C., Gimbun, J., Cheng, C.K. (2013. Hydrogen Production via Glycerol Dry Reforming over La-Ni/Al2O3 Catalyst. Bulletin of Chemical Reaction Engineering & Catalysis, 8 (2: 160-166. (doi:10.9767/bcrec.8.2.4874.160-166][Permalink/DOI: http://dx.doi.org/10.9767/bcrec.8.2.4874.160-166

  9. Thermal stability of multilayered Pt-Al2O3 nanocoatings for high temperature CSP systems

    CSIR Research Space (South Africa)

    Nuru, ZY

    2015-10-01

    Full Text Available B), 115-120 Thermal stability of multilayered Pt-Al2O3 nanocoatings for high temperature CSP systems Z.Y. Nuru a, b, *, L. Kotsedi a, b, C.J. Arendse c, D. Motaung d, B. Mwakikunga d, K. Roro d, e, M. Maaza a, b a UNESCO-UNISA Africa Chair... Pretoria, South Africa e R&D Core-Energy, Council for Scientific and Industrial Research, P O Box 395, 0001 Pretoria, South Africa Abstract This contribution reports on the effect of thermal annealing on sputtered Pt–Al(sub2)O(sub3) multilayered...

  10. Improved real-time dosimetry using the radioluminescence signal from Al2O3:C

    DEFF Research Database (Denmark)

    Damkjær, Sidsel Marie Skov; Andersen, Claus Erik; Aznar, Marianne

    2008-01-01

    15th International Conference on Solid State Dosimetry Location: Delft Univ Technol, Delft, NETHERLANDS Date: JUL 08-13, 2007 Abstract: Carbon-doped aluminum oxide (Al2O3:C) is a highly sensitive luminescence material for ionizing radiation dosimetry, and it is well established that the optically...... to greatly reduce the influence of shallow traps in the range from 0 to 3 Gy and the RL dose-rate measurements with a time resolution of 0. 1 s closely matched dose-rate changes monitored with in ionization chamber. (c) 2007 Elsevier Ltd. All rights reserved....

  11. Ultrasensitive spectroscopy based on photonic waveguides on Al2O3/SiO2 platform

    Science.gov (United States)

    Heidari, Elham; Xu, Xiaochuan; Tang, Naimei; Mokhtari-Koushyar, Farzad; Dalir, Hamed; Chen, Ray T.

    2018-02-01

    Here a photonic waveguide on Al2O3/SiO2 platform is proposed to cover the 240 320 nm wavelength-range, which is of paramount significance in protein and nuclei acid quantification. Our optical waveguide increases path-length and overlap integration for light-matter interaction with proteins. The proposed system detects one order less proteins concentration as low as 12.5 μg/ml compared with NanoDropTM that detects Beer-Lambert-law.

  12. Fluência em filtros cerâmicos de Al2O3 Creep in Al2O3 ceramic filters

    Directory of Open Access Journals (Sweden)

    V. R. Salvini

    2001-12-01

    Full Text Available O comportamento de fluência em materiais cerâmicos sólidos é afetado pela sua microestrutura. Fundamentalmente, são três os parâmetros que influenciam o comportamento de fluência nestes materiais: o constituinte mineralógico, a fase vítrea e a porosidade. Além destes fatores microestruturais, a fluência em cerâmicas celulares depende também da sua macroestrutura, constituída de um arranjo tridimensional de filamentos sólidos interligados. Assim, a análise dos resultados de fluência nestes materiais compreende duas etapas: na primeira deve-se identificar o modo de deformação dos filamentos cerâmicos (macroestrutura e na segunda, identificar o(s mecanismo(s de fluência da microestrutura através dos parâmetros n (expoente da tensão aplicada e Q (energia de ativação do processo. Neste trabalho avaliou-se a fluência em filtros cerâmicos de Al2O3 de 10 ppi sob compressão de 0,034; 0,051 e 0,068 MPa às temperaturas de 1500, 1550 e 1600 ºC ao ar. De acordo com os resultados obtidos, supõe-se que o modo de deformação por flambagem dos filamentos paralelos a carga aplicada é um dos principais fatores que contribui para o aumento da taxa de deformação do filtro e, portanto, dos valores de n e Q. Além do modo de deformação dos filamentos, observou-se que o tipo de ensaio de fluência (com ou sem troca de carga também influencia a determinação dos valores de n e Q.The creep behavior of solid ceramics is strongly affected by the microstructure. Fundamentally, there are three microstructural features which influence the creep behavior: the mineral content, the flux content and the apparent porosity. Additionally, the creep of cellular ceramics also depends on their macrostructure constituted by a tridimensional array of struts. Therefore, the creep analysis of these materials should consist of two stages. Firstly, identification of the macrostructure deformation mode and secondly, determination of the stress exponent

  13. Micro-nanocomposites Al2O3/ NbC/ WC and Al2O3/ NbC/ TaC

    International Nuclear Information System (INIS)

    Santos, Thais da Silva

    2014-01-01

    Alumina based ceramics belong to a class of materials designated as structural, which are widely used in cutting tools. Although alumina has good properties for application as a structural ceramics, composites with different additives have been produced with the aim of improving its fracture toughness and mechanical strength. New studies point out micro-nanocomposites, wherein the addition of micrometric particles should enhance mechanical strength, and nano-sized particles enhance fracture toughness. In this work, alumina based micro nanocomposites were obtained by including nano-sized NbC and micrometer WC particles at 2:1, 6:4, 10:5 and 15:10 vol% proportions, and also with the inclusion of nano-sized NbC and micrometer TaC particles at 2:1 vol% proportion. For the study of densification, micro-nanocomposites were sintered in a dilatometer with a heating rate of 20°C/min until a temperature of 1800°C in argon atmosphere. Based on the dilatometry results, specimens were sintered in a resistive graphite furnace under argon atmosphere between 1500°C and 1700°C by holding the sintering temperature for 30 minutes. Densities, crystalline phases, hardness and tenacity were determined, and micro-nanocomposites microstructures were analyzed. The samples Al 2 O 3 : NbC: TaC sintered at 1700 ° C achieved the greater apparent density (~ 95% TD) and the sample sintered at 1600 ° C showed homogeneous microstructure and increased hardness value (15.8 GPa) compared to the pure alumina . The compositions with 3% inclusions are the most promising for future applications. (author)

  14. Controlled High Filler Loading of Functionalized Al2O3-Filled Epoxy Composites for LED Thermal Management

    Science.gov (United States)

    Permal, Anithambigai; Devarajan, Mutharasu; Hung, Huong Ling; Zahner, Thomas; Lacey, David; Ibrahim, Kamarulazizi

    2018-03-01

    Thermal management in light-emitting diode (LED) has been extensively researched recently. This study is intended to develop an effective thermally conductive epoxy composite as thermal interface material (TIM) for headlamp LEDs. Silane-functionalized aluminum oxide (Al2O3) powder of different average particle sizes (44 and 10 µm) was studied for its feasibility as filler at its maximum loading. A detailed comparison of three different methods of particle dispersions, hand-mix, speed-mix and calendaring process (3-roll mill), has been reported. The dispersion of Al2O3 particles, the thermal conductivity and thermal degradation characteristics of the composites were investigated and explained in detail. At 75 wt.% filler loading, 10 and 44 µm Al2O3 achieved composite thermal conductivities of 1.13 and 2.08 W/mK, respectively, which is approximately 528 and 1055% of enhancement with respect to neat epoxy. The package-level thermal performance of the LED employing the Al2O3-filled TIMs was carried out using thermal transient analysis. The experimental junction-to-ambient thermal resistances ( R thJ-A) achieved were 6.65, 7.24, and 8.63 K/W for Al2O3_44µm, Al2O3_10µm and neat epoxy, respectively. The results revealed that the Al2O3_44µm fillers-filled composite performed better in both material-level and package-level thermal characteristics.

  15. Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

    International Nuclear Information System (INIS)

    Han Le; Zhang Xiong; Wang Sheng-Kai; Xue Bai-Qing; Liu Hong-Gang; Wu Wang-Ran; Zhao Yi

    2014-01-01

    We propose a modified thermal oxidation method in which an Al 2 O 3 capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeO x interfacial layer, and obtain a superior Al 2 O 3 /GeO x /Ge gate stack. The GeO x interfacial layer is formed in oxidation reaction by oxygen passing through the Al 2 O 3 OBL, in which the Al 2 O 3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeO x interfacial layer would dramatically decrease as the thickness of Al 2 O 3 OBL increases, which is beneficial to achieving an ultrathin GeO x interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeO x interfacial layer has little influence on the passivation effect of the Al 2 O 3 /Ge interface. Ge (100) p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) using the Al 2 O 3 /GeO x /Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (I on /I off ) ratio of above 1×10 4 , a subthreshold slope of ∼ 120 mV/dec, and a peak hole mobility of 265 cm 2 /V·s are achieved. (condensed matter: structural, mechanical, and thermal properties)

  16. Fabrication and Characteristics of Sintered Cutting Stainless Steel Fiber Felt with Internal Channels and an Al2O3 Coating

    Directory of Open Access Journals (Sweden)

    Shufeng Huang

    2018-03-01

    Full Text Available A novel sintered cutting stainless steel fiber felt with internal channels (SCSSFFC composed of a stainless-steel fiber skeleton, three-dimensional interconnected porous structure and multiple circular microchannels is developed. SCSSFFC has a jagged and rough surface morphology and possesses a high specific surface area, which is approximately 2.4 times larger than that of the sintered bundle-drawing stainless steel fiber felt with internal channels (SBDSSFFC and is expected to enhance adhesive strength. The sol-gel and wet impregnation methods are adopted to prepare SCSSFFC with an Al2O3 coating (SCSSFFC/Al2O3. The adhesive strength of SCSSFFC/Al2O3 is investigated using ultrasonic vibration and thermal shock tests. The experimental results indicate that the weight loss rate of the Al2O3 coating has a 4.2% and 8.42% reduction compared with those of SBDSSFFCs based on ultrasonic vibration and thermal shock tests. In addition, the permeability of SCSSFFC/Al2O3 is investigated based on forced liquid flow tests. The experimental results show that the permeability and inertial coefficients of SCSSFFC/Al2O3 are mainly affected by the coating rate, porosity and open ratio; however, the internal microchannel diameter has little influence. It is also found that SCSSFFC/Al2O3 yields superior permeability, as well as inertial coefficients compared with those of other porous materials reported in the literature.

  17. Superficial modifications in TiO2 and Al2O3 ceramics

    Directory of Open Access Journals (Sweden)

    Santos Flávio de Paula

    2003-01-01

    Full Text Available The properties of hydrophilicity or hydrophobicity of materials are defined mainly, though not exclusively, by their composition, morphology and surface energy. In this work, titanium dioxide (TiO2 and aluminum oxide-alumina (Al2O3 ceramics prepared by uniaxial pressing were studied in terms of surface energy. The surfaces of these ceramics were treated with nitrogen plasma, using a stainless steel reactor excited by a 13,6 MHz radio frequency operating at 50 W input power and 13 Pa nitrogen pressure. The surface morphology was investigated by scanning electron microscopy (SEM analysis. Surface energy and contact angle measurements were taken using a RAMÉ-HART goniometer. These measurements were taken as function of time, over a 21-day period. The contact angle and surface energy values were found to change by almost 34% in comparison to their initial values immediately following plasma treatment. Nonetheless, the hydrophilic character of the Al2O3 and TiO2 remained constant throughout the test period.

  18. Corrosion Resistance of Ni/Al2O3 Nanocomposite Coatings

    Directory of Open Access Journals (Sweden)

    Beata KUCHARSKA

    2016-05-01

    Full Text Available Nickel matrix composite coatings with ceramic disperse phase have been widely investigated due to their enhanced properties, such as higher hardness and wear resistance in comparison to the pure nickel. The main aim of this research was to characterize the structure and corrosion properties of electrochemically produced Ni/Al2O3 nanocomposite coatings. The coatings were produced in a Watts bath modified by nickel grain growth inhibitor, cationic surfactant and the addition of alumina particles (low concentration 5 g/L. The process has been carried out with mechanical and ultrasonic agitation. The Ni/Al2O3 nanocomposite coatings were characterized by SEM, XRD and TEM techniques. In order to evaluate corrosion resistance of produced coatings, the corrosion studies have been carried out by the potentiodynamic method in a 0.5 M NaCl solution. The corrosion current, corrosion potential and corrosion rate were determined. Investigations of the morphology, topography and corrosion damages of the produced surface layers were performed by scanning microscope techniques. DOI: http://dx.doi.org/10.5755/j01.ms.22.1.7407

  19. Black corundum produced by heat treatment of α-Al2O3 in hydrogen

    International Nuclear Information System (INIS)

    Strelov, K.K.; Kamenskikh, V.A.; Gilev, Yu.P.; Permikina, N.M.; Anufrienko, V.F.; Ivan'kin, I.A.; Kharlamov, G.V.

    1987-01-01

    The goal of this work has been to compare the structure of white and black corundum. Among all forms of Al 2 O 3 samples, only α-Al 2 O 3 was observed to have undistorted unit-cell parameters. The x-ray diffractograms of black and white samples (even those differing somewhat in the impurity contents) were perfectly identical. The integrated signal intensities at 300 and 77 K are practically identical, which allows the authors to ascribeit to an antiferromagnetic phase. The formation of this phase can be due to iron impurities. However, the very small starting Fe 3+ concentration, the presence of its spectrum with very small variations in both the forms of corundum, and the considerable intensity of the wide signal lead them to another supposition regarding its nature. Possibly, an antiferromagnetic ordering of the reduced forms of aluminum (Al 2+ ) takes place. For the spectrum of the isolated Al 2+ ions, one may expect the appearance of six hyperfine-structure lines with a high constant. A large width of the EPR signal on account of the hyperfine structures does not contradict the assumption about the formation of an antiferromagnetic structure in the present case. The question remains unclear as to the stabilization sites of such structures, viz., whether they are formed with the participation of Al 2+ interstitial ions

  20. Prediction of fracture strength in Al2O3/SiCp ceramic matrix nanocomposites

    Directory of Open Access Journals (Sweden)

    Z. Zhang and D.L. Chen

    2007-01-01

    Full Text Available Based primarily on a recent publication [S.M. Choi, H. Awaji, Sci. Tech. Adv. Mater. 6 (2005 2–10.], where the dislocations around the nano-sized particles in the intra-granular type of ceramic matrix nanocomposites (CMNCs were modeled, dislocation activities in Al2O3/SiCp CMNCs were discussed in relation to the processing conditions. The dislocations around the nano-sized particles, caused by the thermal mismatch between the ceramic matrix and nano-sized particles, were assumed to hold out the effect of Orowan-like strengthening, although the conventional Owowan loops induced by the movement of dislocations were unlikely in the ceramic matrix at room temperature. A model involving the yield strength of metal matrix nanocomposites (MMNCs, where the Owowan strengthening effect was taken into consideration, was thus modified and extended to predict the fracture strength of the intra-granular type of CMNCs without and with annealing. On the basis of the characteristics of dislocations in the CMNCs, the load-bearing effect and Orowan-like strengthening were considered before annealing, while the load-bearing effect and enhanced dislocation density strengthening were taken into account after annealing. The model prediction was found to be in agreement with the experimental data of Al2O3/SiCp nanocomposites reported in the literature.

  1. Fractal analysis of crack paths in Al2O3-TiC-4%Co composites

    Institute of Scientific and Technical Information of China (English)

    LI Jing; YIN Yan-sheng; LIU Ying-cai; MA Lai-peng

    2006-01-01

    Al2O3-TiC-4%Co(volume fraction) composites(ATC) with high toughness (7.8±0.8 MPa·m1/2) and strength (782±60 MPa) were fabricated. In comparison with Al2O3-TiC composites(AT), the fracture toughness was significantly improved by 60%. The crack paths, generated by Vickers indentation on the polished surfaces of both composites, were analyzed from a fractal point of view to distinguish the possible toughening mechanisms involved. Quantitative evaluation of indentation cracks indicates that the crack deflection plays a more effective role. Cracks of the ATC composites show higher deflection angles and more deflections along the path. ATC composites present higher fractal dimension (D=1.07) than AT composites (D=1.02), which is directly related to the higher fracture toughness. A significant relationship between crack path and toughness is evident: the more irregular the geometry of the crack, the higher the fracture toughness.

  2. Influence of Al2O3 nanoparticles on the isothermal cure of an epoxy resin

    International Nuclear Information System (INIS)

    Sanctuary, R; Baller, J; Zielinski, B; Becker, N; Krueger, J K; Philipp, M; Mueller, U; Ziehmer, M

    2009-01-01

    The influence of Al 2 O 3 nanoparticles on the curing of an epoxy thermoset based on diglycidyl ether of bisphenol A was investigated using temperature-modulated differential scanning calorimetry (TMDSC) and rheology. Diethylene triamine was used as a hardener. TMDSC not only allows for a systematic study of the kinetics of cure but simultaneously gives access to the evolution of the specific heat capacities of the thermosets. The technique thus provides insight into the glass transition behaviour of the nanocomposites and hence makes it possible to shed some light on the interaction between the nanoparticles and the polymer matrix. The Al 2 O 3 fillers are shown to accelerate the growth of macromolecules upon isothermal curing. Several mechanisms which possibly could be responsible for the acceleration are described. As a result of the faster network growth chemical vitrification occurs at earlier times in the filled thermosets and the specific reaction heat decreases with increasing nanoparticle concentration. Rheologic measurements of the zero-shear viscosity confirm the faster growth of the macromolecules in the presence of the nanoparticles.

  3. Sulfuric acid baking and leaching of spent Co-Mo/Al2O3 catalyst.

    Science.gov (United States)

    Kim, Hong-In; Park, Kyung-Ho; Mishra, Devabrata

    2009-07-30

    Dissolution of metals from a pre-oxidized refinery plant spent Co-Mo/Al(2)O(3) catalyst have been tried through low temperature (200-450 degrees C) sulfuric acid baking followed by mild leaching process. Direct sulfuric acid leaching of the same sample, resulted poor Al and Mo recoveries, whereas leaching after sulfuric acid baking significantly improved the recoveries of above two metals. The pre-oxidized spent catalyst, obtained from a Korean refinery plant found to contain 40% Al, 9.92% Mo, 2.28% Co, 2.5% C and trace amount of other elements such as Fe, Ni, S and P. XRD results indicated the host matrix to be poorly crystalline gamma- Al(2)O(3). The effect of various baking parameters such as catalyst-to-acid ratio, baking temperature and baking time on percentage dissolutions of metals has been studied. It was observed that, metals dissolution increases with increase in the baking temperature up to 300 degrees C, then decreases with further increase in the baking temperature. Under optimum baking condition more than 90% Co and Mo, and 93% Al could be dissolved from the spent catalyst with the following leaching condition: H(2)SO(4)=2% (v/v), temperature=95 degrees C, time=60 min and Pulp density=5%.

  4. Tribological properties of Al 7075 alloy based composites strengthened with Al2O3 fibres

    Directory of Open Access Journals (Sweden)

    K. Naplocha

    2011-04-01

    Full Text Available Wear resistance of 7075 aluminium alloy based composite materials reinforced with Al2O3 Saffil fibres was investigated. The measurementsof wear were performed applying the pin-on-disc method at dry friction conditions with the gray iron counterpart. The effects ofpressure of composite samples on the counterpart made of gray iron and the orientation of fibers in relation to the friction surface on wear rate were determined. The materials were produced by squeeze casting method where 80-90% porous ceramic preform were infiltrated.After T6 heat treatment hardness increased about 50-60% both for unreinforced alloy and composites containing strengthening Saffilfibres. Wear resistance of composite materials in relation to the unreinforced 7075 alloy was slightly worse at lower pressure of 0.8 MPa. Under higher pressure of 1.2 MPa wear resistance of unreinforced 7075 alloy was even better whereas no effect of orientation of fibers on wear in composite materials was observed. Additionally, significant wear of counterface in the presence of debris with fragmented Al2O3 fibres as abrasives was observed. Wear resistance improvement of composite materials was obtained when with alumina Saffil fibres Carbon C fibres in the preforms were applied.

  5. TiB2/Al2O3 ceramic particle reinforced aluminum fabricated by spray deposition

    International Nuclear Information System (INIS)

    Chen Xing; Yang Chengxiao; Guan Leding; Yan Biao

    2008-01-01

    Aluminum matrix ceramic particle reinforced composites (AMCs) is a kind of composite with great importance. Aluminum matrix composite reinforced with TiB 2 /Al 2 O 3 ceramic particles was successfully in situ synthesized in Al-TiO 2 -B 2 O 3 system in this paper, using spray deposition with hot-press treatment technique. Five groups of composites with different reinforcement volume contents were prepared and the comparisons of porosity, ultimate tensile strength (UTS), elongation and Brinell hardness (BH) between the composites with and without hot-press treating were carried out. The composite with 21.0% reinforcement volume content was analyzed by X-ray diffraction (XRD), Environmental Scanning Electron Microscope (ESEM), Transmission Electron Microscope (TEM) and Energy Disperse Spectroscopy (EDS). The results revealed the formation and uniform distribution of fine reinforcements in the matrix after hot-press treating, while a new intermetallic phase Al 3 Ti was found besides TiB 2 /Al 2 O 3 ceramic phase

  6. Tribological Properties of Ti(Al,O)/Al2O3 Composite Coating by Thermal Spraying

    Science.gov (United States)

    Salman, Asma; Gabbitas, Brian; Cao, Peng; Zhang, Deliang

    The use of thermal spray coatings provides protection to the surfaces operating in severe environments. The main goal of the current work is to investigate the possibility of using a high velocity air fuel (HVAF) thermally sprayed wear resistant Ti(Al,O)/Al2O3 coating on tool steel (H13) which is used for making dies for aluminium high pressure die casting and dummy blocks aluminium extrusion. A feedstock of Ti(Al,O)/Al2O3 composite powder was produced from a mixture of Al and TiO2 powders by high energy mechanical milling, followed by a thermal reaction process. The feedstock was then thermally sprayed using a high velocity air-fuel (HVAF) technique onto H13 steel substrates to produce a composite coating. The present study describes and compares the tribological properties such as friction and sliding wear rate of the coating both at room and high temperature (700°C). The wear resistance of the coating was investigated by a tribometer using a spherical ended alumina pin as a counter body under dry and lubricating conditions. The results showed that composite coating has lower wear rate at high temperature than at room temperature without using lubricant. The composite coating was characterized using scanning electron microscopy (SEM), optical microscopy and X-ray diffractometry (XRD). This paper reports the experimental observations and discusses the wear resistance performance of the coatings at room and high temperatures.

  7. Chemical Quenching of Positronium in CuO/Al2O3 Catalysts

    International Nuclear Information System (INIS)

    Zhang Hong-Jun; Liu Zhe-Wen; Chen Zhi-Quan; Wang Shao-Jie

    2011-01-01

    CuO/Al 2 O 3 catalysts were prepared by mixing CuO and γ-Al 2 O 3 nanopowders. Microstructure and chemical environment of the catalysts are characterized by positron annihilation spectroscopy. The positron annihilation lifetime measurements reveal two long lifetime components τ 3 and τ 4 , which correspond to ortho-positronium (o-Ps) annihilating in microvoids and large pores, respectively. With increasing CuO content from 0 to 40 wt%, both τ 4 and its intensity I 4 show significant decrease, which indicates quenching effect of o-Ps. The para-positronium (p-Ps) intensities derived from multi-Gaussian fitting of the coincidence Doppler broadening spectra also decreases gradually with increasing CuO content. This excludes the possibility of spin-conversion of positronium. Therefore, the chemical quenching by CuO is probably responsible for the decrease of o-Ps lifetime. Variation in the o-Ps annihilation rate λ 4 (1/τ 4 ) as a function of CuO content can be well fitted by a straight line, and the slope of the fitting line is (1.83 ± 0.05) × 10 −7 s −1 . (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Temperature dependence of the Al2O3:C response in medical luminescence dosimetry

    International Nuclear Information System (INIS)

    Edmund, Jens M.; Andersen, Claus E.

    2007-01-01

    Over the last years, attention has been given to applications of Al 2 O 3 :C in space and medical dosimetry. One such application is in vivo dose verification in radiotherapy of cancer patients and here we investigate the temperature effects on the radioluminescence (RL) and optically stimulated luminescence (OSL) signals in the room-to-body temperature region. We found that the OSL response changes with both irradiation and stimulation temperatures as well as the OSL integration time. We conclude that temperature effects on the OSL response can be removed by integration if the irradiation temperature is not varied. The RL response only depends on the irradiation temperature. We recommend that calibration should be carried out at the same irradiation temperature at which the measurement is performed (i.e. at body temperature for in vivo measurements). The overall change in the integrated OSL and RL signals with irradiation and stimulation temperature covers an interval from -0.2% to 0.6% per deg. C. This indicates the correction factor one must take into account when performing luminescence dosimetry at different temperatures. The same effects were observed regardless of crystal type, test doses and stimulation and detection wavelengths. The reported temperature dependence seems to be a general property of Al 2 O 3 :C

  9. Dynamic compaction of Al2O3-ZrO2 compositions

    International Nuclear Information System (INIS)

    Tunaboylu, B.; McKittrick, J.; Nutt, S.R.

    1994-01-01

    Shock compaction of Al 2 O 3 -ZrO 2 binary and ternary powder compositions resulted in dense, one-piece samples without visible cracks for pressures ≤12.6 GPa. Dynamic pressures were achieved by using a 6.5-m-long two-state gas gun. It is believed that plastic deformation by dislocation slip of α-Al 2 O 3 partially accommodates the tensile stresses created during the release of shock pressures. A fine and narrow particle size distribution is necessary to achieve high bulk densities, but the bulk structural integrity was not strongly related to the distribution. A high-pressure phase of ZrO 2 , which was formed from the monoclinic polymorph, was found at and above shock pressure of 6.3 GPa. No evidence of the orthorhombic cotunnite structure was observed. Compaction of glassy and submicrocrystalline rapidly solidified starting materials showed good structural integrity, although the bulk density was relatively low. It is not clear what the densification/bonding mechanism is in these materials, although it appears not to be plastic deformation. Microstructural analysis showed that fine and uniform microstructures are retained after compaction at appropriate dynamic pressures for all compositions, with some interparticle cohesion present

  10. Formation mechanism and control of MgO·Al2O3 inclusions in non-oriented silicon steel

    Science.gov (United States)

    Sun, Yan-hui; Zeng, Ya-nan; Xu, Rui; Cai, Kai-ke

    2014-11-01

    On the basis of the practical production of non-oriented silicon steel, the formation of MgO·Al2O3 inclusions was analyzed in the process of "basic oxygen furnace (BOF) → RH → compact strip production (CSP)". The thermodynamic and kinetic conditions of the formation of MgO·Al2O3 inclusions were discussed, and the behavior of slag entrapment in molten steel during RH refining was simulated by computational fluid dynamics (CFD) software. The results showed that the MgO/Al2O3 mass ratio was in the range from 0.005 to 0.017 and that MgO·Al2O3 inclusions were not observed before the RH refining process. In contrast, the MgO/Al2O3 mass ratio was in the range from 0.30 to 0.50, and the percentage of MgO·Al2O3 spinel inclusions reached 58.4% of the total inclusions after the RH refining process. The compositions of the slag were similar to those of the inclusions; furthermore, the critical velocity of slag entrapment was calculated to be 0.45 m·s-1 at an argon flow rate of 698 L·min-1, as simulated using CFD software. When the test steel was in equilibrium with the slag, [Mg] was 0.00024wt%-0.00028wt% and [Al]s was 0.31wt%-0.37wt%; these concentrations were theoretically calculated to fall within the MgO·Al2O3 formation zone, thereby leading to the formation of MgO·Al2O3 inclusions in the steel. Thus, the formation of MgO·Al2O3 inclusions would be inhibited by reducing the quantity of slag entrapment, controlling the roughing slag during casting, and controlling the composition of the slag and the MgO content in the ladle refractory.

  11. Thiophene hydrodesulfurization over CoMo/Al2O3-CuY catalysts: Temperature effect study

    OpenAIRE

    Boukoberine, Yamina; Hamada, Boudjema

    2016-01-01

    CoMo/γ-Al2O3-CuY catalysts are prepared by physically mixing CoMo/γ-Al2O3 catalyst with Cu-exchanged Y zeolite. The CuY zeolite is prepared by the solid state ion exchange technique. The thiophene hydrodesulfurization is performed in a fixed bed reactor at high temperature and atmospheric pressure. The results show that the presence of CuY zeolite particles in CoMo/Al2O3 catalyst can have a noticeable effect on both the conversion and product selectivities. An increasing zeolite loading in ca...

  12. XAS study of V2O5/Al2O3 catalysts doped with rare earth oxides

    International Nuclear Information System (INIS)

    Centeno, M.A.; Malet, P.; Capitan, M.J.; Benitez, J.J.; Carrizosa, I.; Odriozola, J.A.

    1995-01-01

    This paper reports on XAS studies of well dispersed V 2 O 5 /Al 2 O 3 and V 2 O 5 /Sm 2 O 3 /Al 2 O 3 samples. XAS spectra at V-K and Sm-L III edges show that the rare earth oxide favours the formation of regular tetrahedral units, [VO 4 ], over the surface of the support. Positions of the preedge peak at the V-K edge, and intensities of the white line at the Sm-L III edge also suggest modifications in the electronic density around V and Sm atoms when they are simultaneously supported over Al 2 O 3 . ((orig.))

  13. Study on influence of Surface roughness of Ni-Al2O3 nano composite coating and evaluation of wear characteristics

    Science.gov (United States)

    Raghavendra, C. R.; Basavarajappa, S.; Sogalad, Irappa

    2018-02-01

    Electrodeposition is one of the most technologically feasible and economically superior techniques for producing metallic coating. The advancement in the application of nano particles has grabbed the attention in all fields of engineering. In this present study an attempt has been made on the Ni-Al2O3nano particle composite coating on aluminium substrate by electrodeposition process. The aluminium surface requires a specific pre-treatment for better adherence of coating. In light of this a thin zinc layer is coated on the aluminium substrate by electroless process. In addition to this surface roughness is an important parameter for any coating method and material. In this work Ni-Al2O3 composite coating were successfully coated by varying the process parameters such as bath temperature, current density and particle loading. The experimentation was performed using central composite design based 20 trials of experiments. The effect of process parameters and surface roughness before and after coating is analyzed on wear rate and coating thickness. The results shown a better wear resistance of Ni-Al2O3 composite electrodeposited coating compared to Ni coating. The particle loading and interaction effect of current density with temperature has greater significant effect on wear rate. The surface roughness is significantly affected the wear behaviour and thickness of coating.

  14. Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors

    International Nuclear Information System (INIS)

    Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo

    2013-01-01

    The two-dimensional electron gas (2DEG) mobility limited by dielectric and barrier thickness fluctuations (TF) scattering in Al 2 O 3 /AlGaN/GaN double heterojunction high-electron mobility transistors (HEMTs) is calculated. Calculation shows that thickness fluctuation scattering is the main limitation in Al 2 O 3 /AlGaN/GaN double heterojunction HEMTs with thin Al 2 O 3 layer thicknesses. In addition, a study of 2DEG mobility as a function of 2DEG density, n s , shows that TF scattering acts as the main limitation when n s exceeds 2 × 10 12 cm −2 . The results may be used to design HEMTs to obtain higher 2DEG mobilities by modulating the dielectric layer and barrier thicknesses or 2DEG density. - Highlights: • The mobility limited by thickness fluctuation (TF) scattering is studied. • Results show that thickness fluctuation scattering is the main limitation. • Two-dimensional electron gas (2DEG) mobility is a function of 2DEG density. • TF scattering is the main limitation when 2DEG density exceeds 2 × 10 12 cm −2

  15. Lifetime assessment of atomic-layer-deposited Al2O3-Parylene C bilayer coating for neural interfaces using accelerated age testing and electrochemical characterization.

    Science.gov (United States)

    Minnikanti, Saugandhika; Diao, Guoqing; Pancrazio, Joseph J; Xie, Xianzong; Rieth, Loren; Solzbacher, Florian; Peixoto, Nathalia

    2014-02-01

    The lifetime and stability of insulation are critical features for the reliable operation of an implantable neural interface device. A critical factor for an implanted insulation's performance is its barrier properties that limit access of biological fluids to the underlying device or metal electrode. Parylene C is a material that has been used in FDA-approved implantable devices. Considered a biocompatible polymer with barrier properties, it has been used as a substrate, insulation or an encapsulation for neural implant technology. Recently, it has been suggested that a bilayer coating of Parylene C on top of atomic-layer-deposited Al2O3 would provide enhanced barrier properties. Here we report a comprehensive study to examine the mean time to failure of Parylene C and Al2O3-Parylene C coated devices using accelerated lifetime testing. Samples were tested at 60°C for up to 3 months while performing electrochemical measurements to characterize the integrity of the insulation. The mean time to failure for Al2O3-Parylene C was 4.6 times longer than Parylene C coated samples. In addition, based on modeling of the data using electrical circuit equivalents, we show here that there are two main modes of failure. Our results suggest that failure of the insulating layer is due to pore formation or blistering as well as thinning of the coating over time. The enhanced barrier properties of the bilayer Al2O3-Parylene C over Parylene C makes it a promising candidate as an encapsulating neural interface. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  16. The effect of temperature, matrix alloying and substrate coatings on wettability and shear strength of Al/Al2O3 couples

    Science.gov (United States)

    Sobczak, N.; Ksiazek, M.; Radziwill, W.; Asthana, R.; Mikulowski, B.

    2004-03-01

    A fresh approach has been advanced to examine in the Al/Al2O3 system the effects of temperature, alloying of Al with Ti or Sn, and Ti and Sn coatings on the substrate, on contact angles measured using a sessile-drop test, and on interface strength measured using a modified push-off test that allows shearing of solidified droplets with less than 90 deg contact angle. In the modified test, the solidified sessile-drop samples are bisected perpendicular to the drop/Al2O3 interface at the midplane of the contact circle to obtain samples that permit bond strength measurement by stress application to the flat surface of the bisected couple. The test results show that interface strength is strongly influenced by the wetting properties; low contact angles correspond to high interface strength, which also exhibits a strong temperature dependence. An increase in the wettability test temperature led to an increase in the interface strength in the low-temperature range where contact angles were large and wettability was poor. The room-temperature shear tests conducted on thermally cycled sessile-drop test specimens revealed the effect of chemically formed interfacial oxides; a weakening of the thermally cycled Al/Al2O3 interface was caused under the following conditions: (1) slow contact heating and short contact times in the wettability test, and (2) fast contact heating and longer contact times. The addition of 6 wt pct Ti or 7 wt pct Sn to Al only marginally influenced the contact angle and interfacial shear strength. However, Al2O3 substrates having thin (<1 µm) Ti coatings yielded relatively low contact angles and high bond strength, which appears to be related to the dissolution of the coating in Al and formation of a favorable interface structure.

  17. Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

    Science.gov (United States)

    Ťapajna, M.; Stoklas, R.; Gregušová, D.; Gucmann, F.; Hušeková, K.; Haščík, Š.; Fröhlich, K.; Tóth, L.; Pécz, B.; Brunner, F.; Kuzmík, J.

    2017-12-01

    III-N surface polarization compensating charge referred here to as 'surface donors' (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at 600 °C. We systematically investigated impact of HCl pre-treatment prior to oxide deposition and post-deposition annealing (PDA) at 700 °C. SD density was reduced down to 1.9 × 1013 cm-2 by skipping HCl pre-treatment step as compared to 3.3 × 1013 cm-2 for structures with HCl pre-treatment followed by PDA. The nature and origin of SD was then analyzed based on the correlation between electrical, micro-structural, and chemical properties of the Al2O3/GaN interfaces with different SD density (NSD). From the comparison between distributions of interface traps of MOS heterojunction with different NSD, it is demonstrated that SD cannot be attributed to interface trapped charge. Instead, variation in the integrity of the GaOx interlayer confirmed by X-ray photoelectron spectroscopy is well correlated with NSD, indicating SD may be formed by border traps at the Al2O3/GaOx interface.

  18. Comparative Study of the Corrosion Resistance of Air-Plasma-Sprayed Ca2SiO4 and Al2O3 Coatings in Salt Water

    Directory of Open Access Journals (Sweden)

    Yuan Xiao

    2018-03-01

    Full Text Available In this study, Ca2SiO4 coating was sprayed on stainless steel substrate and the corrosion resistance of the as-sprayed coating was studied in salt water. At the same time, Al2O3 coatings were produced by air-plasma-sprayed technology as comparison. Immersion test was carried out to evaluate the protection performance of coatings. Potentiodynamic polarization curves and electrochemical impedance spectroscopy (EIS plots were also analyzed. The results indicated that Ca2SiO4 coatings showed a better protection performance than Al2O3 coatings. During the immersion, various calcium carbonate crystals appeared on the surface of Ca2SiO4 coatings. Ca(OH2 was released from Ca2SiO4 coatings into NaCl aqueous solution, increasing the alkalinity, which is in favor of the formation of passivation film, and thus improves the corrosion resistance. Ca2SiO4 coatings became denser after immersion due to the fact that the pores and micro cracks were filled with hydration products i.e., hydrated calcium silicate (C–S–H gel. On the contrary, the microstructure of Al2O3 coatings became loose and obvious rusty spots were observed on the surface after the immersion test.

  19. Comparative study of gamma ray shielding and some properties of PbO–SiO2–Al2O3 and Bi2O3–SiO2–Al2O3 glass systems

    International Nuclear Information System (INIS)

    Singh, K.J.; Kaur, Sandeep; Kaundal, R.S.

    2014-01-01

    Gamma-ray shielding properties have been estimated in terms of mass attenuation coefficient, half value layer and mean free path values, whereas, structural studies have been performed in terms of density, optical band gap, glass transition temperature and longitudinal ultrasonic velocity parameters. X-ray diffraction, UV–visible, DSC and ultrasonic techniques have been used to explore the structural properties of PbO–SiO 2 –Al 2 O 3 and Bi 2 O 3 –SiO 2 –Al 2 O 3 glass systems. - Highlights: • Bi 2 O 3 –SiO 2 –Al 2 O 3 and PbO–SiO 2 –Al 2 O 3 glasses can replace conventional concretes as gamma-ray shielding materials. • Gamma-ray shielding properties improve with the addition of heavy metals. • Rigidity deteriorates with the increase in the content of heavy metals. • Bi 2 O 3 –SiO 2 –Al 2 O 3 glass system is better than PbO–SiO 2 –Al 2 O 3 glass system in terms of gamma-ray shielding as well as structural properties

  20. The Modification of Sodium Polyacrylate Water Solution Cooling Properties by AL2O3

    Directory of Open Access Journals (Sweden)

    Wojciech Gęstwa

    2010-01-01

    Based on cooling curves, it can be concluded that for the water solution of sodium polyacrylate with AL2O3 nanoparticles in comparison to water and 10% polymer water solution lower cooling speed is obtained. The cooling medium containing nanoparticles provides lower cooling speed in the smallest surface austenite occurance (500–600 C in the charts of the CTP for most nonalloy structural steels and low-alloy steels. However lower cooling temperature at the beginning of martensitic transformation causes the formation of smaller internal stresses, leading to smaller dimensional changes and hardening deformation. For the quenching media the wetting angle was appointed by the drop-shape method. These studies showed the best wettability of polymer water solution (sodium polyacrylate with the addition of AL2O3 nanoparticles, whose wetting angle was about 65 degrees. Obtaining the smallest wetting angle for the medium containing nanoparticles suggests that the heat transfer to the cooling medium is larger. This allows slower cooling at the same time ensuring its homogeneity. The obtained values of wetting angle confirm the conclusions drawn on the basis of cooling curves and allowus to conclude that in the case of the heat transfer rate it will have a lower value than for water and 10% polymer water solution. In the research on hardened carburized steel samples C10 and 16MnCr5 surface hardness, impact strength and changes in the size of cracks in Navy C-ring sample are examined. On this basis of the obtained results it can be concluded that polymer water solution with nanoparticles allows to obtain a better impact strength at comparable hardness on the surface. Research on the dimensional changes on the basis of the sample of Navy C-ring also shows small dimensional changes for samples carburized and hardened in 10% polymer water solution with the addition of nanoparticles AL2O3. Smaller dimensional changes were obtained for samples of steel 16MnCr5 thanfar C10. The

  1. Natural convection of Al2O3-water nanofluid in a wavy enclosure

    Science.gov (United States)

    Leonard, Mitchell; Mozumder, Aloke K.; Mahmud, Shohel; Das, Prodip K.

    2017-06-01

    Natural convection heat transfer and fluid flow inside enclosures filled with fluids, such as air, water or oil, have been extensively analysed for thermal enhancement and optimisation due to their applications in many engineering problems, including solar collectors, electronic cooling, lubrication technologies, food processing and nuclear reactors. In comparison, little effort has been given to the problem of natural convection inside enclosures filled with nanofluids, while the addition of nanoparticles into a fluid base to alter thermal properties can be a feasible solution for many heat transfer problems. In this study, the problem of natural convection heat transfer and fluid flow inside a wavy enclosure filled with Al2O3-water nanofluid is investigated numerically using ANSYS-FLUENT. The effects of surface waviness and aspect ratio of the wavy enclosure on the heat transfer and fluid flow are analysed for various concentrations of Al2O3 nanoparticles in water. Flow fields and temperature fields are investigated and heat transfer rate is examined for different values of Rayleigh number. Results show that heat transfer within the enclosure can be enhanced by increasing surface waviness, aspect ratio or nanoparticles volume fraction. Changes in surface waviness have little effect on the heat transfer rate at low Rayleigh numbers, but when Ra ≥ 105 heat transfer increases with the increase of surface waviness from zero to higher values. Increasing the aspect ratio causes an increase in heat transfer rate, as the Rayleigh number increases the effect of changing aspect ratio is more apparent with the greatest heat transfer enhancement seen at higher Rayleigh numbers. Nanoparticles volume fraction has a little effect on the average Nusselt number at lower Rayleigh numbers when Ra ≥ 105 average Nusselt number increases with the increase of volume fraction. These findings provide insight into the heat transfer effects of using Al2O3-water nanofluid as a heat

  2. Effects of temperature and ionization density in medical luminescence dosimetry using Al2O3:C

    International Nuclear Information System (INIS)

    Morgenthaler Edmund, J.

    2007-11-01

    A new system containing small crystals of aluminum oxide doped with carbon (Al 2 O 3 :C) attached to optical fiber cables has recently been introduced. During irradiation, the system monitors the radioluminescence (RL)from the crystals and after irradiation, an optically stimulated luminescence (OSL) signal can be read out by stimulating the crystal with light. This thesis applies the initial part and the total area of the resulting OSL decay curve for dosimetry measurements and investigates the effects of temperature and proton energy, i.e. ionization density, on the RL and OSL signals from Al 2 O 3 :C. In the temperature study, it was found that the OSL signal depends on both irradiation and stimulation temperature while the RL signal is effected only by the irradiation temperature. The initial OSL signal is increasing with temperature whereas the total OSL area is decreasing. Therefore, if the irradiation temperature is kept constant, one can find an integration time which provides an OSL signal independent of stimulation temperature. Overall, the RL and OSL signals vary between -0.2 to 0.6% per C. Thermal effects were simulated with a band structure model and indicated that the temperature effects are caused by the combined efforts of energetic shallow traps and thermal excitation from intermediate states in deeper traps. In the study of ionization density, we investigated protons with energies between 10 and 60 MeV (4.57 to 1.08 keV/μm in water). Experimentally, we observed that the initial OSL signalprovided a signal independent of linear energy transfer (LET) for allenergies at 0.3 Gy. The total OSL area showed an LET dependent behavior atall doses and energies. We used track structure theory (TST) to give possible explanations for the LET dependence of the OSL signal. From these calculations, we found that the initial OSL signal is, in general, not LET independent which makes Al2O3:C unsuitable for OSL proton dosimetry. The initial OSL signal can, however

  3. Thermally stable single atom Pt/m-Al2O3 for selective hydrogenation and CO oxidation

    KAUST Repository

    Zhang, Zailei; Zhu, Yihan; Asakura, Hiroyuki; Zhang, Bin; Zhang, Jiaguang; Zhou, Maoxiang; Han, Yu; Tanaka, Tsunehiro; Wang, Aiqin; Zhang, Tao; Yan, Ning

    2017-01-01

    with outstanding stability in several reactions under demanding conditions. The Pt atoms are firmly anchored in the internal surface of mesoporous Al2O3, likely stabilized by coordinatively unsaturated pentahedral Al3+ centres. The catalyst keeps its structural

  4. EFFECT OF IMPREGNATION PROCEDURE OF Pt/γ-Al2O3 CATALYSTS UPON CATALYTIC OXIDATION OF CO

    Directory of Open Access Journals (Sweden)

    Triyono Triyono

    2010-06-01

    Full Text Available The oxidation of carbon monoxide by oxygen using two catalysts prepared by two different methods has been investigated. In the first method, catalyst prepared by immersing γ-Al2O3 into the hexa-chloroplatinic acid solution at 80oC for 4 h, resulted Pt/γ-Al2O3 catalyst having platinum highly dispersed on the support. While that of immersing γ-Al2O3 in the hexa-chloroplatinic acid solution at room temperature for 12 h, produced Pt/ γ-Al2O3 catalyst where platinum dispersion was much lower. Catalytic activity test showed that platinum well dispersed on the support enhanced the activity of oxidation of carbon monoxide. The platinum impregnated at room temperature resulted in the poor activity.   Keyword: Catalyst, CO Oxidation, Platinum.

  5. The effect of native Al2O3 skin disruption on properties of fine Al powder compacts

    International Nuclear Information System (INIS)

    Balog, Martin; Poletti, Cecilia; Simancik, Frantisek; Walcher, Martin; Rajner, Walter

    2011-01-01

    Research highlights: → The effect of various powder metallurgy compaction routes on the microstructures and properties of ultra-fine atomized Al powder compacts. → Applied compaction route affects the deformation and fracture of native Al 2 O 3 layer present on the surface of as-atomized powder. → Distribution, morphology and interconnectivity of in situ introduced Al 2 O 3 dispersoids distinctly determine the compacts properties. - Abstract: In the presented study we characterize how various powder metallurgical routes (extrusion, forging, and HIP/sintering) affect the fracture of native Al 2 O 3 layer present on the surface of ultra-fine atomized Al powders. It is shown that the different distribution, morphology and interconnectivity of in situ introduced Al 2 O 3 dispersoids strongly affect the thermal stability and mechanical and thermal properties of subsequent powder compacts.

  6. Characterization of Bragg gratings in Al2O3 waveguides fabricated by focused ion beam milling and laser interference lithography

    NARCIS (Netherlands)

    Ay, F.; Bernhardi, Edward; Agazzi, L.; Bradley, J.; Worhoff, Kerstin; Pollnau, Markus; de Ridder, R.M.

    Optical grating cavities in Al2O3 channel waveguides were successfully defined by focused ion beam milling and laser interference lithography. Both methods are shown to be suitable for realizing resonant structures for on-chip waveguide lasers.

  7. Facile and Selective Synthesis of 2-Substituted Benzimidazoles Catalyzed by FeCl3/ Al2O3

    Directory of Open Access Journals (Sweden)

    Guo-Feng Chen

    2012-01-01

    Full Text Available 2-Substituted benzimidazoles were synthesized in a single pot from aromatic aldehydes and o-phenylenediamine catalyzed by FeCl3/ Al2O3 in DMF at ambient temperature attained good yields and high selectivity.

  8. Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

    International Nuclear Information System (INIS)

    Zheng Zhi-Wei; Huo Zong-Liang; Zhu Chen-Xin; Xu Zhong-Guang; Liu Jing; Liu Ming

    2011-01-01

    In this paper, we investigate an Al 2 O 3 /HfSiO stack as the blocking layer of a metal—oxide—nitride—oxide—silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al 2 O 3 /HfO 2 stack as the blocking layer, the sample with the Al 2 O 3 /HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al 2 O 3 /HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications. (interdisciplinary physics and related areas of science and technology)

  9. Production of Al2O3–SiC nano-composites by spark plasma sintering

    International Nuclear Information System (INIS)

    Mansour Razavi; Ali Reza Farajipour; Mohammad Zakeri; Mohammad Reza Rahimipour; Ali Reza Firouzbakht

    2017-01-01

    In this paper, Al2O3–SiC composites were produced by SPS at temperatures of 1600°C for 10min under vacuum atmosphere. For preparing samples, Al2O3 with the second phase including of micro and nano-sized SiC powder were milled for 5h. The milled powders were sintered in a SPS machine. After sintering process, phase studies, densification and mechanical properties of Al2O3–SiC composites were examined. Results showed that the specimens containing micro-sized SiC have an important effect on bulk density, hardness and strength. The highest relative density, hardness and strength were 99.7%, 324.6 HV and 2329MPa, respectively, in Al2O3–20wt% SiCmicro composite. Due to short time sintering, the growth was limited and grains still remained in nano-meter scale. [es

  10. Raman spectra of MgSiO3 . 10% Al2O3-perovskite at various pressures and temperatures

    International Nuclear Information System (INIS)

    Liu Lingun; Irifune, T.

    1995-01-01

    Variations of Raman spectra of MgSiO 3 . 10% Al 2 O 3 -perovskite were investigated up to about 270 kbar at room temperature and in the range 108-425 K at atmospheric pressure. Like MgSiO 3 -perovskite, the Raman frequencies of MgSiO 3 . 10% Al 2 O 3 -perovskite increase nonlinearly with increasing pressure and decrease linearly with increasing temperature within the experimental uncertainties and the range investigated. A comparison of these data with those of MgSiO 3 -perovskite suggests that MgSiO 3 . 10% Al 2 O 3 -perovskite is slightly more compressible than MgSiO 3 -perovskite, and that the volume thermal expansion for MgSiO 3 . 10% Al 2 O 3 -perovskite is also slightly greater than that for MgSiO 3 -perovskite. (orig.)

  11. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    International Nuclear Information System (INIS)

    Vähä-Nissi, Mika; Pitkänen, Marja; Salo, Erkki; Kenttä, Eija; Tanskanen, Anne; Sajavaara, Timo; Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana; Karppinen, Maarit; Harlin, Ali

    2014-01-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al 2 O 3 of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al 2 O 3 thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al 2 O 3 • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli

  12. Phase constituents and microstructure of laser cladding Al2O3/Ti3Al reinforced ceramic layer on titanium alloy

    International Nuclear Information System (INIS)

    Li Jianing; Chen Chuanzhong; Lin Zhaoqing; Squartini, Tiziano

    2011-01-01

    Research highlights: → In this study, Fe 3 Al has been chosen as cladding powder due to its excellent properties of wear resistance and high strength, etc. → Laser cladding of Fe 3 Al + TiB 2 /Al 2 O 3 pre-placed alloy powder on Ti-6Al-4V alloy substrate can form the Ti 3 Al/Fe 3 Al + TiB 2 /Al 2 O 3 ceramic layer, which can increase wear resistance of substrate. → In cladding process, Al 2 O 3 can react with TiB 2 leading to formation of Ti 3 Al and B. → This principle can be used to improve the Fe 3 Al + TiB 2 laser-cladded coating. - Abstract: Laser cladding of the Fe 3 Al + TiB 2 /Al 2 O 3 pre-placed alloy powder on Ti-6Al-4V alloy can form the Ti 3 Al/Fe 3 Al + TiB 2 /Al 2 O 3 ceramic layer, which can greatly increase wear resistance of titanium alloy. In this study, the Ti 3 Al/Fe 3 Al + TiB 2 /Al 2 O 3 ceramic layer has been researched by means of electron probe, X-ray diffraction, scanning electron microscope and micro-analyzer. In cladding process, Al 2 O 3 can react with TiB 2 leading to formation of amount of Ti 3 Al and B. This principle can be used to improve the Fe 3 Al + TiB 2 laser cladded coating, it was found that with addition of Al 2 O 3 , the microstructure performance and micro-hardness of the coating was obviously improved due to the action of the Al-Ti-B system and hard phases.

  13. The effect of the gas composition on hydrogen-assisted NH3-SCR over Ag/Al2O3

    DEFF Research Database (Denmark)

    Tamm, Stefanie; Fogel, Sebastian; Gabrielsson, Pär

    2013-01-01

    In addition to high activity in hydrocarbon-SCR, Ag/Al2O3 catalysts show excellent activity for NOx reduction for H2-assisted NH3-SCR already at 200°C. Here, we study the influence of different gas compositions on the activity of a pre-sulfated 6wt% Ag/Al2O3 catalyst for NOx reduction, and oxidat...

  14. Synthesis behavior of nanocrystalline Al-Al2O3 composite during low time mechanical milling process

    International Nuclear Information System (INIS)

    Alizadeh, Mostafa; Aliabadi, Morteza Mirzaei

    2011-01-01

    Research highlights: → In the low time milling the effect of Al 2 O 3 amount is investigated → Al 2 O 3 particles are distributed uniformly in the Al matrix → In the low time milling it is possible to produce nanostructured composite powder → Median size and bulk density measurements demonstrate reaching the steady state. - Abstract: In this work, four different volume fractions of Al 2 O 3 (10, 20, 30 and 40 vol.%) were mixed with the fine Al powder and the powder blends were milled for 5 h. Scanning electron microscopy analysis, particle size analysis and bulk density measurements were used to investigate the morphological changes and achieving the steady state conditions. The results showed that increasing the Al 2 O 3 content can provide the steady state particle size in 5 h milling process. It was found that increasing the volume fraction of Al 2 O 3 leads to increasing the uniformity of Al 2 O 3 . Standard deviations of microhardness measurements confirmed this result. The XRD pattern and XRF investigations depicted that increasing the Al 2 O 3 content causes an increase in the crystal defects, micro-strain and Fe contamination during 5 h milling process of nanocrystalline composite powders while the grain size is decreased. To investigate the effect of milling time, Al-30 vol.% Al 2 O 3 (which achieved steady state during 5 h milling process) was milled for 1-4 h. The results depicted that the milling time lower than 5 h, do not achieve to steady state conditions.

  15. Combined TEM and NC-AFM study of Al2O3-supported Pt nanoparticles

    DEFF Research Database (Denmark)

    Jensen, Thomas Nørregaard; Simonsen, Søren Bredmose; Chorkendorff, Ib

    Sintering, the growth of large particles at the expense of smaller ones, is one of the main causes of catalysts deactivation, since the physicochemical properties of a nanoparticle may depend strongly on its size, shape and composition. For application as heterogeneous catalysts, the nanoparticle...... kinks and edges often play an important role for the catalytic activity. In order to preserve these sites, it is important to stabilize the supported nanoparticles with sizes of a few nanometers during operational conditions at often high temperatures and in the relevant gas environments. A prototypical...... nanocatalyst system for studying coarsening consists of Pt nanoparticles supported on an Al2O3 material which is relevant as an oxidation catalyst in diesel and lean-burn engine exhaust after-treatment technologies. In this study we address the effect on sintering of the shape of Pt nanoparticles supported...

  16. AN EXPERIMENTAL STUDY ON HEAT TRANSFER AND FRICTION FACTOR OF AL2O3 NANOFLUID

    Directory of Open Access Journals (Sweden)

    K.V. Sharma

    2011-12-01

    Full Text Available L. Syam Sundar1 and K.V. Sharma2This paper reports experimental investigations of fully developed laminar convective heat transfer and friction factor characteristics of different volume concentrations of Al2O3 nanofluid in a plain tube, fitted with different twist ratios of twisted tape inserts. Experiments are conducted with water and nanofluid in the range of 700

  17. Effect of preparation method on catalytic activity of Ni/ γ-Al2O3 catalysts

    International Nuclear Information System (INIS)

    Miranda Morales, Barbara

    2017-01-01

    The performance of catalysts was shown to be strongly dependent on their methods of preparation. A study to examine the relationship between catalyst preparation procedures and the structure, dispersion, activity, and selectivity of the finished catalyst is reported. 10 wt.%Ni/γ-Al 2 O 3 catalysts were prepared by incipient wetness impregnation and by wet impregnation. The catalysts were used in the conversion of glycerol in gas phase and atmospheric pressure. The selectivity and activity of the catalysts were affected by the preparation method employed. The catalysts were characterized by thermogravimetric analysis (TGA), temperature-programmed reduction (TPR), N 2 -physorption, H 2 -chemisorption, X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier-transform infrared spectroscopy (FTIR) and temperature-programmed oxidation (TPO). The Ni particle size and dispersion of the catalysts affected the selectivity to hydrogenolysis and dehydration routes, and the formation of carbon deposits was also affected. (author) [es

  18. Chemisorption of carbon dioxide and ethene on eta-Al2O3

    International Nuclear Information System (INIS)

    Schubart, W.; Knoezinger, H.

    1985-01-01

    The chemisorption of ethene on eta-Al 2 O 3 has been studied by thermal desorption spectroscopy (TDS) as a function of the degree of surface hydroxylation. The effect of CO 2 poisoning and the D 2 exchange with chemisorbed C 2 H 4 was investigated. While CO 2 shows a broad distribution of interaction energies, three (or four) distinct chemisorption states can be detected for C 2 H 4 . It is suggested that C 2 H 4 forms vinyl species via heterolytic cleavage of C-H bonds on acid-base pair sites. These presumably contain strong defects (ensembles of anion vacanies) and OH-groups coordinated to tetrahedral Al 3+ in immediate vicinity. Differences in coordination and local environment are assumed to be responsible for the formation of the three (or four) distinct chemisorption states. (orig.) [de

  19. Characterization of dispersed and aggregated Al2O3 morphologies for predicting nanofluid thermal conductivities

    International Nuclear Information System (INIS)

    Feng Xuemei; Johnson, Drew W.

    2013-01-01

    Nanofluids are reported to have enhanced thermal conductivities resulting from nanoparticle aggregation. The goal of this study was to explore through experimental measurements, dispersed and aggregated morphology effects on enhanced thermal conductivities for Al 2 O 3 nanoparticles with a primary size of 54.2 ± 2.0 nm. Aggregation effects were investigated by measuring t