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Sample records for al2o3 thin films

  1. Antimicrobial effect of Al2O3, Ag and Al2O3/Ag thin films on Escherichia coli and Pseudomonas putida

    International Nuclear Information System (INIS)

    Angelov, O; Stoyanova, D; Ivanova, I; Todorova, S

    2016-01-01

    The influence of Al 2 O 3 , Ag and Al 2 O 3 /Ag thin films on bacterial growth of Gramnegative bacteria Pseudomonas putida and Escherichia coli is studied. The nanostructured thin films are deposited on glass substrates without intentional heating through r.f. magnetron sputtering in Ar atmosphere of Al 2 O 3 and Ag targets or through sequential sputtering of Al 2 O 3 and Ag targets, respectively. The individual Ag thin films (thickness 8 nm) have a weak bacteriostatic effect on Escherichia coli expressed as an extended adaptive phase of the bacteria up to 5 hours from the beginning of the experiment, but the final effect is only 10 times lower bacterial density than in the control. The individual Al 2 O 3 film (20 nm) has no antibacterial effect against two strains E. coli - industrial and pathogenic. The Al 2 O 3 /Ag bilayer films (Al 2 O 3 20 nm/Ag 8 nm) have strong bactericidal effect on Pseudomonas putida and demonstrate an effective time of disinfection for 2 hours. The individual films Al2O3 and Ag have not pronounced antibacterial effect on Pseudomonas putida . A synergistic effect of Al2O3/Ag bilayer films in formation of oxidative species on the surface in contact with the bacterial suspension could be a reason for their antimicrobial effect on E. coli and P. putida . (paper)

  2. Antimicrobial effect of Al2O3, Ag and Al2O3/Ag thin films on Escherichia coli and Pseudomonas putida

    Science.gov (United States)

    Angelov, O.; Stoyanova, D.; Ivanova, I.; Todorova, S.

    2016-10-01

    The influence of Al2O3, Ag and Al2O3/Ag thin films on bacterial growth of Gramnegative bacteria Pseudomonas putida and Escherichia coli is studied. The nanostructured thin films are deposited on glass substrates without intentional heating through r.f. magnetron sputtering in Ar atmosphere of Al2O3 and Ag targets or through sequential sputtering of Al2O3 and Ag targets, respectively. The individual Ag thin films (thickness 8 nm) have a weak bacteriostatic effect on Escherichia coli expressed as an extended adaptive phase of the bacteria up to 5 hours from the beginning of the experiment, but the final effect is only 10 times lower bacterial density than in the control. The individual Al2O3 film (20 nm) has no antibacterial effect against two strains E. coli - industrial and pathogenic. The Al2O3/Ag bilayer films (Al2O3 20 nm/Ag 8 nm) have strong bactericidal effect on Pseudomonas putida and demonstrate an effective time of disinfection for 2 hours. The individual films Al2O3 and Ag have not pronounced antibacterial effect on Pseudomonas putida. A synergistic effect of Al2O3/Ag bilayer films in formation of oxidative species on the surface in contact with the bacterial suspension could be a reason for their antimicrobial effect on E. coli and P. putida.

  3. Direct bonding of ALD Al2O3 to silicon nitride thin films

    DEFF Research Database (Denmark)

    Laganà, Simone; Mikkelsen, E. K.; Marie, Rodolphe

    2017-01-01

    microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N4 (stoichiometric nitride) thin films annealed from room temperature up......, the current bonding method can be also used for further MEMS applications. ...

  4. Surface study and thickness control of thin Al2O3 film on Cu-9%Al(111) single crystal

    International Nuclear Information System (INIS)

    Yamauchi, Yasuhiro; Yoshitake, Michiko; Song Weijie

    2004-01-01

    We were successful in growing a uniform flat Al 2 O 3 film on the Cu-9%Al(111) surface using the improved cleaning process, low ion energy and short time sputtering. The growth of ultra-thin film of Al 2 O 3 on Cu-9%Al was investigated using Auger electron spectroscopy (AES) and a scanning electron microscope (SEM). The Al 2 O 3 film whose maximum thickness was about 4.0 nm grew uniformly on the Cu-9%Al surface. The Al and O KLL Auger peaks of Al 2 O 3 film shifted toward low kinetic energy, and the shifts were related to Schottky barrier formation and band bending at the Al 2 O 3 /Cu-9%Al interface. The thickness of Al 2 O 3 film on the Cu-9%Al surface was controlled by the oxygen exposure

  5. Pulsed Laser deposition of Al2O3 thin film on silicon

    International Nuclear Information System (INIS)

    Lamagna, A.; Duhalde, S.; Correra, L.; Nicoletti, S.

    1998-01-01

    Al 2 O 3 thin films were fabricated by pulsed laser deposition (PLD) on Si 3 N 4 /Si, to improve the thermal and electrical isolation of gas sensing devices. The microstructure of the films is analysed as a function of the deposition conditions (laser fluence, oxygen pressure, target-substrate distance and substrate temperature). X-ray analysis shows that only a sharp peak that coincides with the corundum (116) reflection can be observed in all the films. But, when they are annealed at temperatures above 1,200 degree centigrade, a change in the crystalline structure of some films occurs. The stoichiometry and morphology of the films with and without thermal treatment are compared using environmental scanning electron microscopy (SEM) and EDAX analysis. (Author) 14 refs

  6. Optical properties of Al2O3 thin films grown by atomic layer deposition.

    Science.gov (United States)

    Kumar, Pradeep; Wiedmann, Monika K; Winter, Charles H; Avrutsky, Ivan

    2009-10-01

    We employed the atomic layer deposition technique to grow Al(2)O(3) films with nominal thicknesses of 400, 300, and 200 nm on silicon and soda lime glass substrates. The optical properties of the films were investigated by measuring reflection spectra in the 400-1800 nm wavelength range, followed by numerical fitting assuming the Sellmeier formula for the refractive index of Al(2)O(3). The films grown on glass substrates possess higher refractive indices as compared to the films on silicon. Optical waveguiding is demonstrated, confirming the feasibility of high-index contrast planar waveguides fabricated by atomic layer deposition.

  7. Production and study of mixed Al-Al2O3 thin films for passive electronic circuits

    International Nuclear Information System (INIS)

    Pruniaux, B.

    1966-09-01

    A new vacuum deposition process, named reactive evaporation, is used to realize passive thin film circuits. Using aluminium, oxidized at various steps in its vapor phase, we obtain: - Al-Al 2 O 3 cermet resistors (R □ = 10000 Ω □ , CTR 2 O 3 capacitors (C □ = 60000 pf/cm 2 , tg δ [fr

  8. Growth of C60 thin films on Al2O3/NiAl(100) at early stages

    Science.gov (United States)

    Hsu, S.-C.; Liao, C.-H.; Hung, T.-C.; Wu, Y.-C.; Lai, Y.-L.; Hsu, Y.-J.; Luo, M.-F.

    2018-03-01

    The growth of thin films of C60 on Al2O3/NiAl(100) at the earliest stage was studied with scanning tunneling microscopy and synchrotron-based photoelectron spectroscopy under ultrahigh-vacuum conditions. C60 molecules, deposited from the vapor onto an ordered thin film of Al2O3/NiAl(100) at 300 K, nucleated into nanoscale rectangular islands, with their longer sides parallel to direction either [010] or [001] of NiAl. The particular island shape resulted because C60 diffused rapidly, and adsorbed and nucleated preferentially on the protrusion stripes of the crystalline Al2O3 surface. The monolayer C60 film exhibited linear protrusions of height 1-3 Å, due to either the structure of the underlying Al2O3 or the lattice mismatch at the boundaries of the coalescing C60 islands; such protrusions governed also the growth of the second layer. The second layer of the C60 film grew only for a C60 coverage >0.60 ML, implying a layer-by-layer growth mode, and also ripened in rectangular shapes. The thin film of C60 was thermally stable up to 400 K; above 500 K, the C60 islands dissociated and most C60 desorbed.

  9. Temperature-Dependent Electrical Properties of Al2O3-Passivated Multilayer MoS2 Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Seok Hwan Jeong

    2018-03-01

    Full Text Available It is becoming more important for electronic devices to operate stably and reproducibly under harsh environments, such as extremely low and/or high temperatures, for robust and practical applications. Here, we report on the effects of atomic-layer-deposited (ALD aluminum oxide (Al2O3 passivation on multilayer molybdenum disulfide (MoS2 thin-film transistors (TFTs and their temperature-dependent electrical properties, especially at a high temperature range from 293 K to 380 K. With the aid of ultraviolet-ozone treatment, an Al2O3 layer was uniformly applied to cover the entire surface of MoS2 TFTs. Our Al2O3-passivated MoS2 TFTs exhibited not only a dramatic reduction of hysteresis but also enhancement of current in output characteristics. In addition, we investigated the temperature-dependent behaviors of the TFT performance, including intrinsic carrier mobility based on the Y-function method.

  10. Strain Distribution of Au and Ag Nanoparticles Embedded in Al2O3 Thin Film

    Directory of Open Access Journals (Sweden)

    Honghua Huang

    2014-01-01

    Full Text Available Au and Ag nanoparticles embedded in amorphous Al2O3 matrix are fabricated by the pulsed laser deposition (PLD method and rapid thermal annealing (RTA technique, which are confirmed by the experimental high-resolution transmission electron microscope (HRTEM results, respectively. The strain distribution of Au and Ag nanoparticles embedded in the Al2O3 matrix is investigated by the finite-element (FE calculations. The simulation results clearly indicate that both the Au and Ag nanoparticles incur compressive strain by the Al2O3 matrix. However, the compressive strain existing on the Au nanoparticle is much weaker than that on the Ag nanoparticle. This phenomenon can be attributed to the reason that Young’s modulus of Au is larger than that of Ag. This different strain distribution of Au and Ag nanoparticles in the same host matrix may have a significant influence on the technological potential applications of the Au-Ag alloy nanoparticles.

  11. Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

    Science.gov (United States)

    Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

    2017-12-01

    In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

  12. Suppressing the Photocatalytic Activity of TiO2 Nanoparticles by Extremely Thin Al2O3 Films Grown by Gas-Phase Deposition at Ambient Conditions

    Directory of Open Access Journals (Sweden)

    Jing Guo

    2018-01-01

    Full Text Available This work investigated the suppression of photocatalytic activity of titanium dioxide (TiO2 pigment powders by extremely thin aluminum oxide (Al2O3 films deposited via an atomic-layer-deposition-type process using trimethylaluminum (TMA and H2O as precursors. The deposition was performed on multiple grams of TiO2 powder at room temperature and atmospheric pressure in a fluidized bed reactor, resulting in the growth of uniform and conformal Al2O3 films with thickness control at sub-nanometer level. The as-deposited Al2O3 films exhibited excellent photocatalytic suppression ability. Accordingly, an Al2O3 layer with a thickness of 1 nm could efficiently suppress the photocatalytic activities of rutile, anatase, and P25 TiO2 nanoparticles without affecting their bulk optical properties. In addition, the influence of high-temperature annealing on the properties of the Al2O3 layers was investigated, revealing the possibility of achieving porous Al2O3 layers. Our approach demonstrated a fast, efficient, and simple route to coating Al2O3 films on TiO2 pigment powders at the multigram scale, and showed great potential for large-scale production development.

  13. Growth and characterization of ceria thin films and Ce-doped γ-Al2O3 nanowires using sol-gel techniques.

    Science.gov (United States)

    Gravani, S; Polychronopoulou, K; Stolojan, V; Cui, Q; Gibson, P N; Hinder, S J; Gu, Z; Doumanidis, C C; Baker, M A; Rebholz, C

    2010-11-19

    γ-Al(2)O(3) is a well known catalyst support. The addition of Ce to γ-Al(2)O(3) is known to beneficially retard the phase transformation of γ-Al(2)O(3) to α-Al(2)O(3) and stabilize the γ-pore structure. In this work, Ce-doped γ-Al(2)O(3) nanowires have been prepared by a novel method employing an anodic aluminium oxide (AAO) template in a 0.01 M cerium nitrate solution, assisted by urea hydrolysis. Calcination at 500 °C for 6 h resulted in the crystallization of the Ce-doped AlOOH gel to form Ce-doped γ-Al(2)O(3) nanowires. Ce(3+) ions within the nanowires were present at a concentration of surface, a nanocrystalline CeO(2) thin film was deposited with a cubic fluorite structure and a crystallite size of 6-7 nm. Characterization of the nanowires and thin films was performed using scanning electron microscopy, transmission electron microscopy, electron energy loss spectroscopy, x-ray photoelectron spectroscopy and x-ray diffraction. The nanowire formation mechanism and urea hydrolysis kinetics are discussed in terms of the pH evolution during the reaction. The Ce-doped γ-Al(2)O(3) nanowires are likely to find useful applications in catalysis and this novel method can be exploited further for doping alumina nanowires with other rare earth elements.

  14. Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals.

    Science.gov (United States)

    Park, Seonyoung; Kim, Seong Yeoul; Choi, Yura; Kim, Myungjun; Shin, Hyunjung; Kim, Jiyoung; Choi, Woong

    2016-05-11

    We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O3)-treated multilayer MoS2 crystals. The formation of S-O bonds on MoS2 after low-power UV/O3 treatment increased the surface energy, allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance-voltage measurement of Au-Al2O3-MoS2 metal oxide semiconductor capacitors indicated n-type MoS2 with an electron density of ∼10(17) cm(-3) and a minimum interface trap density of ∼10(11) cm(-2) eV(-1). These results demonstrate the possibility of forming a high-quality Al2O3-MoS2 interface by proper UV/O3 treatment, providing important implications for their integration into field-effect transistors.

  15. Behaviour of Parallel Coupled Microstrip Band Pass Filter and Simple Microstripline due to Thin-Film Al2O3 Overlay

    Directory of Open Access Journals (Sweden)

    S. B. Rane

    1996-01-01

    Full Text Available The X-band behaviour of a seven-section parallel-coupled microstrip band pass filter and microstripline due to thin-film Al2O3 overlay of different thickness is reported in this paper. This Al2O3 film can give a homogeneous overlay structure. There is a substantial increase in the bandwidth due to the overlay, the pass band extending towards higher frequency side. In most of the cases, an increase in the pass band transmittance of a microstripline also increases due to a thin-film Al2O3 overlay, especially for frequencies less than 9.0 GHz. At higher frequencies, random variations are observed. It is felt that thin-film overlays can be used to modify the microstripline circuit properties, thereby avoiding costly and time consuming elaborate design procedures.

  16. Thermo-Optical Properties of Thin-Film TiO2–Al2O3 Bilayers Fabricated by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Rizwan Ali

    2015-05-01

    Full Text Available We investigate the optical and thermo-optical properties of amorphous TiO\\(_2\\–Al\\(_2\\O\\(_3\\ thin-film bilayers fabricated by atomic layer deposition (ALD. Seven samples of TiO\\(_2\\–Al\\(_2\\O\\(_3\\ bilayers are fabricated by growing Al\\(_2\\O\\(_3\\ films of different thicknesses on the surface of TiO\\(_2\\ films of constant thickness (100 nm. Temperature-induced changes in the optical refractive indices of these thin-film bilayers are measured by a variable angle spectroscopic ellipsometer VASE\\textsuperscript{\\textregistered}. The optical data and the thermo-optic coefficients of the films are retrieved and calculated by applying the Cauchy model and the linear fitting regression algorithm, in order to evaluate the surface porosity model of TiO\\(_2\\ films. The effects of TiO\\(_2\\ surface defects on the films' thermo-optic properties are reduced and modified by depositing ultra-thin ALD-Al\\(_2\\O\\(_3\\ diffusion barrier layers. Increasing the ALD-Al\\(_2\\O\\(_3\\ thickness from 20 nm to 30 nm results in a sign change of the thermo-optic coefficient of the ALD-TiO\\(_2\\. The thermo-optic coefficients of the 100 nm-thick ALD-TiO\\(_2\\ film and 30 nm-thick ALD-Al\\(_2\\O\\(_3\\ film in a bilayer are (0.048 \\(\\pm\\ 0.134 \\(\\times 10 ^{-4} {^\\circ}\\mathrm {C}^{-1}\\ and (0.680 \\(\\pm\\ 0.313 \\(\\times 10^{-4} {^\\circ} \\mathrm {C}^{-1}\\, respectively, at a temperature \\(T = 62 ^\\circ \\mathrm{C}\\.

  17. Photocatalytic activity of Al2O3-doped TiO2 thin films activated with visible light on the bacteria Escherichia coli

    International Nuclear Information System (INIS)

    Barajas-Ledesma, E.; Garcia-Benjume, M.L.; Espitia-Cabrera, I.; Bravo-Patino, A.; Espinoza-Beltran, F.J.; Mostaghimi, J.; Contreras-Garcia, M.E.

    2010-01-01

    Al 2 O 3 -doped TiO 2 thin films were prepared by combining electrophoretic deposition (EPD) with sputtering. A Corning* glass was used as a substrate, in which a titanium film was deposited by sputtering. Then, a precursor sol was prepared with Ti(n-OBu) 4 and Al(s-OBu) 3 and used as the medium for EPD. Next, the thin films were sintered and, finally, characterised by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD). Several cultures of Escherichia coli, strain XL1-Blue, were prepared. Nine experiments were carried out. In three of them, an inoculum (a low amount of a product that contains bacteria) was prepared without a film; in the other six Al 2 O 3 -doped TiO 2 film-coated glass substrates were irradiated with visible light before they were introduced in the inoculum. The SEM and EDS results showed that TiO 2 -Al 2 O 3 films were obtained, covering all the glass substrate and with uniform size of particles forming them, and that the aluminium was distributed uniformly on the film. XRD results showed that rutile phase was obtained. By TEM, the structure of TiO 2 was demonstrated. Al 2 O 3 -doped TiO 2 thin films were successful at eliminating E. coli.

  18. Suppressing the Photocatalytic Activity of TiO2 Nanoparticles by Extremely Thin Al2O3 Films Grown by Gas-Phase Deposition at Ambient Conditions

    NARCIS (Netherlands)

    Guo, J.; Bui, H.V.; Valdesueiro Gonzalez, D.; Yuan, Shaojun; Liang, Bin; van Ommen, J.R.

    2018-01-01

    This work investigated the suppression of photocatalytic activity of titanium dioxide (TiO2) pigment powders by extremely thin aluminum oxide (Al2O3) films deposited via an atomic-layer-deposition-type process using trimethylaluminum (TMA) and H2O as precursors. The deposition was performed on

  19. Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Koo, Jae Bon; Lim, Jung Wook; Kim, Seong Hyun; Yun, Sun Jin; Ku, Chan Hoe; Lim, Sang Chul; Lee, Jung Hun

    2007-01-01

    The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al 2 O 3 dielectric are reported. Saturation mobility of 0.38 cm 2 /V s, threshold voltage of 1 V, subthreshold swing of 0.6 V/decade, and on/off current ratio of about 10 8 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al 2 O 3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5 V to - 5 V at supply voltage of - 5 V

  20. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    Directory of Open Access Journals (Sweden)

    Shi-Bing Qian

    2015-12-01

    Full Text Available Amorphous indium-gallium-zinc oxide (a-IGZO thin-film transistor (TFT memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  1. A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure

    International Nuclear Information System (INIS)

    Li, H. K.; Chen, T. P.; Liu, P.; Zhang, Q.; Hu, S. G.; Liu, Y.; Lee, P. S.

    2016-01-01

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al 2 O 3 ) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al 2 O 3 interface and/or in the Al 2 O 3 layer.

  2. A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx-Al2O3 thin film structure

    Science.gov (United States)

    Li, H. K.; Chen, T. P.; Liu, P.; Hu, S. G.; Liu, Y.; Zhang, Q.; Lee, P. S.

    2016-06-01

    In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)-aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al2O3 interface and/or in the Al2O3 layer.

  3. Nanostructural origin of semiconductivity and large magnetoresistance in epitaxial NiCo2O4/Al2O3 thin films

    Science.gov (United States)

    Zhen, Congmian; Zhang, XiaoZhe; Wei, Wengang; Guo, Wenzhe; Pant, Ankit; Xu, Xiaoshan; Shen, Jian; Ma, Li; Hou, Denglu

    2018-04-01

    Despite low resistivity (~1 mΩ cm), metallic electrical transport has not been commonly observed in inverse spinel NiCo2O4, except in certain epitaxial thin films. Previous studies have stressed the effect of valence mixing and the degree of spinel inversion on the electrical conduction of NiCo2O4 films. In this work, we studied the effect of nanostructural disorder by comparing the NiCo2O4 epitaxial films grown on MgAl2O4 (1 1 1) and on Al2O3 (0 0 1) substrates. Although the optimal growth conditions are similar for the NiCo2O4 (1 1 1)/MgAl2O4 (1 1 1) and the NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, they show metallic and semiconducting electrical transport, respectively. Post-growth annealing decreases the resistivity of NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films, but the annealed films are still semiconducting. While the semiconductivity and the large magnetoresistance in NiCo2O4 (1 1 1)/Al2O3 (0 0 1) films cannot be accounted for in terms of non-optimal valence mixing and spinel inversion, the presence of anti-phase boundaries between nano-sized crystallites, generated by the structural mismatch between NiCo2O4 and Al2O3, may explain all the experimental observations in this work. These results reveal nanostructural disorder as being another key factor for controlling the electrical transport of NiCo2O4, with potentially large magnetoresistance for spintronics applications.

  4. Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    Directory of Open Access Journals (Sweden)

    Ruiying Zhang

    2015-12-01

    Full Text Available We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10−9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.

  5. Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

    Science.gov (United States)

    Zhang, Ruiying; Zhu, Jian; Zhang, Zhen; Wang, Yanyan; Qiu, Bocang; Liu, Xuehua; Zhang, Jinping; Zhang, Yi; Fang, Qi; Ren, Zhong; Bai, Yu

    2015-12-01

    We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device's leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10-9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.

  6. Measurement of Young’s modulus and residual stress of atomic layer deposited Al2O3 and Pt thin films

    Science.gov (United States)

    Purkl, Fabian; Daus, Alwin; English, Timothy S.; Provine, J.; Feyh, Ando; Urban, Gerald; Kenny, Thomas W.

    2017-08-01

    The accurate measurement of mechanical properties of thin films is required for the design of reliable nano/micro-electromechanical devices but is increasingly challenging for thicknesses approaching a few nanometers. We apply a combination of resonant and static mechanical test structures to measure elastic constants and residual stresses of 8-27 nm thick Al2O3 and Pt layers which have been fabricated through atomic layer deposition. Young’s modulus of poly-crystalline Pt films was found to be reduced by less than 15% compared to the bulk value, whereas for amorphous Al2O3 it was reduced to about half of its bulk value. We observed no discernible dependence of the elastic constant on thickness or deposition method for Pt, but the use of plasma-enhanced atomic layer deposition was found to increase Young’s modulus of Al2O3 by 10% compared to a thermal atomic layer deposition. As deposited, the Al2O3 layers had an average tensile residual stress of 131 MPa. The stress was found to be higher for thinner layers and layers deposited without the help of a remote plasma. No residual stress values could be extracted for Pt due to insufficient adhesion of the film without an underlying layer to promote nucleation.

  7. Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films

    NARCIS (Netherlands)

    Jinesh, K. B.; van Hemmen, J. L.; M. C. M. van de Sanden,; Roozeboom, F.; Klootwijk, J. H.; Besling, W. F. A.; Kessels, W. M. M.

    2011-01-01

    A comparative electrical characterization study of aluminum oxide (Al2O3) deposited by thermal and plasma-assisted atomic layer depositions (ALDs) in a single reactor is presented. Capacitance and leakage current measurements show that the Al2O3 deposited by the plasma-assisted ALD shows excellent

  8. Vanadium Dioxide and Vanadium Sesquioxide Thin Films Fabricated on (0001) or (1010)Al2O3 by Reactive RF-Magnetron Sputter Deposition and Subsequent Annealing Processes

    Science.gov (United States)

    Yun, Sun Jin; Lim, Jung Wook; Noh, Jong-Su; Kim, Bong-Jun; Kim, Hyun-Tak

    2009-04-01

    Vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) thin films showing an abrupt metal-insulator transition near their typical critical temperature (TC) were successfully fabricated by reactive RF magnetron sputter deposition and subsequent annealing processes. The annealing processes for preparing VO2 and V2O3 films were carried out in 30 mTorr O2 ambient and at a very low pressure (2 ×10-6 Torr), respectively. V2O3 films could be fabricated by the one-step annealing of as-deposited VOx films in contrast to the V2O3 fabrication by the two-step annealing of sol-gel V2O5 films. The annealing temperature for preparing V2O3 films (≥550 °C) was much lower than those reported in earlier works. The dependence of TC on the surface orientation of a single crystalline Al2O3 substrate was also shown for VO2 and V2O3 films. The films fabricated on (1010)-plane Al2O3 substrate showed superior characteristics to those on (0001)-Al2O3.

  9. Effects of substrate characteristics on the passivation performance of ALD-Al2O3 thin film for high-efficiency solar cells

    Science.gov (United States)

    Zongcun, Liang; Dianlei, Wang; Yanbin, Zhu

    2014-05-01

    Atom layer deposition (ALD)-Al2O3 thin films are considered effective passivation layers for p-type silicon surfaces. A lower surface recombination rate was obtained through optimizing the deposition parameters. The effects of some of the basic substrate characteristics including material type, bulk resistivity and surface morphology on the passivation performance of ALD-Al2O3 are evaluated in this paper. Surface recombination velocities of 7.8 cm/s and 6.5 cm/s were obtained for p-type and n-type wafers without emitters, respectively. Substrates with bulk resistivity ranging from 1.5 to 4 Ω·cm were all great for such passivation films, and a higher implied Voc of 660 mV on the 3 Ω·cm substrate was achieved. A minority carrier lifetime (MCL) of nearly 10 μs higher was obtained for cells with a polished back surface compared to those with a textured surface, which indicates the necessity of the polishing process for high-efficiency solar cells. For n-type semi-finished solar cells, a lower effective front surface recombination velocity of 31.8 cm/s was acquired, implying the great potential of (ALD)-Al2O3 thin films for high-efficiency n-type solar cells.

  10. In-situ hybrid study of thermal behaviour of Znsbnd Ni and Znsbnd Nisbnd Al2O3 nanocrystallite thin films induced TEA/MEA by electrocodeposition

    Science.gov (United States)

    Abdulwahab, M.; Fayomi, O. S. I.; Popoola, A. P. I.; Dodo, M. R.

    Our present investigation focuses on the thermal stability of already developed electroforms of Znsbnd Ni and Znsbnd Nisbnd Al2O3 thin films induced with triethylamine (TEA) and monoethylamine (MEA) as surfactant by electrocodeposition on mild steel substrate with the aim to re-examine its micro-hardness and degradation behaviour in static sodium chloride solution. In the event, the samples were thermally treated at 200 °C and air cooled. The results obtained showed that the developed composites are thermally stable with hardness value of the Znsbnd Nisbnd Al2O3 coated; 185 Hv increased to 190.5 Hv indicating a 2.89% improvement. Noticeably, in the Znsbnd Ni coatings, a decrease in the hardness with 26.67% was observed. The oxidation resistance was however favored for both composites.

  11. Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

    Science.gov (United States)

    Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

    2018-02-01

    To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

  12. Surface characterization of poly(methylmethacrylate) based nanocomposite thin films containing Al2O3 and TiO2 nanoparticles

    International Nuclear Information System (INIS)

    Lewis, S.; Haynes, V.; Wheeler-Jones, R.; Sly, J.; Perks, R.M.; Piccirillo, L.

    2010-01-01

    Poly(methylmethacrylate) (PMMA) based nanocomposite electron beam resists have been demonstrated by spin coating techniques. When TiO 2 and Al 2 O 3 nanoparticles were directly dispersed into the PMMA polymer matrix, the resulting nanocomposites produced poor quality films with surface roughnesses of 322 and 402 nm respectively. To improve the surface of the resists, the oxide nanoparticles were encapsulated in toluene and methanol. Using the zeta potential parameter, it was found that the stabilities of the toluene/oxide nanoparticle suspensions were 7.7 mV and 19.4 mV respectively, meaning that the suspension was not stable. However, when the TiO 2 and Al 2 O 3 nanoparticles were encapsulated in methanol the zeta potential parameter was 31.9 mV and 39.2 mV respectively. Therefore, the nanoparticle suspension was stable. This method improved the surface roughness of PMMA based nanocomposite thin films by a factor of 6.6 and 6.4, when TiO 2 and Al 2 O 3 were suspended in methanol before being dispersed into the PMMA polymer.

  13. Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al2O3(0001) substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

    2007-01-01

    Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al 2 O 3 (0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively

  14. Formation and structures of Au-Rh bimetallic nanoclusters supported on a thin film of Al2O3/NiAl(100).

    Science.gov (United States)

    Hsu, Po-Wei; Liao, Zhen-He; Hung, Ting-Chieh; Lee, Hsuan; Wu, Yu-Cheng; Lai, Yu-Ling; Hsu, Yao-Jane; Lin, Yuwei; Wang, Jeng-Han; Luo, Meng-Fan

    2017-06-07

    Self-organized alloying of Au with Rh in nanoclusters on an ordered thin film of Al 2 O 3 /NiAl(100) was investigated via various surface probe techniques under ultrahigh-vacuum conditions and calculations based on density-functional theory. The bimetallic clusters were formed on the sequential deposition of vapors of Au and Rh onto Al 2 O 3 /NiAl(100) at 300 K. The formation was more effective on the oxide seeded with Rh, since all post-deposited Au joined the pregrown Rh clusters; for metal deposition in the reverse order, some separate Rh clusters were formed. The contrasting behavior is rationalized through the easier nucleation of Rh on the oxide surface, due to the stronger Rh-oxide and Rh-Rh bonds. The alloying in the clusters proceeded, regardless of the order of metal deposition, toward a specific structure: an fcc phase, (100) orientation and Rh core-Au shell structure. The orientation, structural ordering and lattice parameters of the Au-Rh bimetallic clusters resembled Rh clusters, rather than Au clusters, on Al 2 O 3 /NiAl(100), even with Rh in a minor proportion. The Rh-predominated core-shell structuring corresponds to the binding energies in the order Rh-Rh > Rh-Au > Au-Au. The core-shell segregation, although active, was somewhat kinetically hindered, since elevating the sample temperature induced further encapsulation of Rh. The bimetallic clusters became thermally unstable above 500 K, for which both Rh and Au atoms began to diffuse into the substrate. Moreover, the electronic structures of surface elements on the bimetallic clusters, controlled by both structural and electronic effects, show a promising reactivity.

  15. Surface structures and compositions of Au-Rh bimetallic nanoclusters supported on thin-film Al2O3/NiAl(100) probed with CO.

    Science.gov (United States)

    Lee, Hsuan; Liao, Zhen-He; Hsu, Po-Wei; Hung, Ting-Chieh; Wu, Yu-Cheng; Lin, Yuwei; Wang, Jeng-Han; Luo, Meng-Fan

    2017-07-28

    The surface structures and compositions of Au-Rh bimetallic nanoclusters on an ordered thin film of Al 2 O 3 /NiAl(100) were investigated, primarily with infrared reflection absorption spectra and temperature-programmed desorption of CO as a probe molecule under ultrahigh-vacuum conditions and calculations based on density-functional theory. The bimetallic clusters were formed by sequential deposition of vapors of Au and Rh onto Al 2 O 3 /NiAl(100) at 300 K. Alloying in the clusters was active and proceeded toward a specific structure-a fcc phase, (100) orientation, and Rh core-Au shell structure, regardless of the order of metal deposition. For Au clusters incorporating deposited Rh, the Au atoms remained at the cluster surface through position exchange and became less coordinated; for deposition in reverse order, deposited Au simply decorated the surfaces of Rh clusters. Both adsorption energy and infrared absorption intensity were enhanced for CO on Au sites of the bimetallic clusters; both of them are associated with the bonding to Rh and also a decreased coordination number of CO-binding Au. These enhancements can thus serve as a fingerprint for alloying and atomic inter-diffusion in similar bimetallic systems.

  16. A novel p-type and metallic dual-functional Cu-Al2O3 ultra-thin layer as the back electrode enabling high performance of thin film solar cells.

    Science.gov (United States)

    Lin, Qinxian; Su, Yantao; Zhang, Ming-Jian; Yang, Xiaoyang; Yuan, Sheng; Hu, Jiangtao; Lin, Yuan; Liang, Jun; Pan, Feng

    2016-09-14

    Increasing the open-circuit voltage (Voc) along with the fill factor (FF) is pivotal for the performance improvement of solar cells. In this work, we report the design and construction of a new structure of CdS/CdTe/Al2O3/Cu using the atomic layer deposition (ALD) method, and then we control Cu diffusion through the Al2O3 atomic layer into the CdTe layer. Surprisingly, this generates a novel p-type and metallic dual-functional Cu-Al2O3 atomic layer. Due to this dual-functional character of the Cu-Al2O3 layer, an efficiency improvement of 2% in comparison with the standard cell was observed. This novel dual-functional back contact structure could also be introduced into other thin film solar cells for their efficiency improvement.

  17. Enhancement Of Free Exciton Peak Intensity In Reactively Sputtered ZnO Thin Films On (0001) Al2O3

    International Nuclear Information System (INIS)

    Tuezemen, S.; Guer, Emre; Yildirim, T.; Xiong, G.; Williams, R. T.

    2007-01-01

    Wide bandgap materials such as GaN with its direct bandgap structure have been developed rapidly for applications in short wavelength light emission. ZnO, II-VI oxide semiconductor, is also promising for various technological applications, especially for optoelectronic light emitting devices in the visible and ultraviolet (UV) range of the electromagnetic spectrum. Above-band-edge absorption spectra of reactively sputtered Zn- and O-rich samples exhibit free exciton (FX) and neutral acceptor bound exciton (A deg. X) features. It is shown that the residual acceptors which bind excitons with an energy of 75 meV reside about 312 meV above the valence band, according to effective mass theory. An intra-bandgap absorption feature peaking at 2.5 eV shows correlation with the characteristically narrow A-free exciton peak intensity. Relevant annealing processes are presented as a function of time and temperature dependently for both Zn- and O- rich thin films. Enhancement of the free exciton peak intensity is observed without disturbing the residual shallow acceptor profile which is necessary for at least background p-type conductivity

  18. Hydrogen–argon plasma pre-treatment for improving the anti-corrosion properties of thin Al2O3 films deposited using atomic layer deposition on steel

    International Nuclear Information System (INIS)

    Härkönen, Emma; Potts, Stephen E.; Kessels, Wilhelmus M.M.; Díaz, Belén; Seyeux, Antoine; Światowska, Jolanta; Maurice, Vincent; Marcus, Philippe; Radnóczi, György; Tóth, Lajos; Kariniemi, Maarit; Niinistö, Jaakko; Ritala, Mikko

    2013-01-01

    The effect of H 2 –Ar plasma pre-treatment prior to thermal atomic layer deposition (ALD) and plasma-enhanced atomic layer deposition (PEALD) of Al 2 O 3 films on steel for corrosion protection was investigated. Time-of-flight secondary ion mass spectrometry and transmission electron microscopy were used to observe the changes in the interface. The electrochemical properties of the samples were studied with polarization measurements, and the coating porosities were calculated from the polarization results for easier comparison of the coatings. Prior to thermal ALD the plasma pre-treatment was observed to reduce the amount of impurities at the interface and coating porosity by 1–3 orders of magnitude. The anti-corrosion properties of the PEALD coatings could also be improved by the pre-treatment. However, exposure of the pre-treatment plasma activated steel surface to oxygen plasma species in PEALD led to facile oxide layer formation in the interface. The oxide layer formed this way was thicker than the native oxide layer and appeared to be detrimental to the protective properties of the coating. The best performance for PEALD Al 2 O 3 coatings was achieved when, after the plasma pre-treatment, the surface was given time to regrow a thin protective interfacial oxide prior to exposure to the oxygen plasma. The different effects that thermal and plasma-enhanced ALD have on the substrate-coating interface were compared. The reactivity of the oxygen precursor was shown to have a significant influence on substrate surface in the early stages of film growth and thereafter also on the overall quality of the protective film. - Highlights: • Influence of H 2 –Ar plasma pre-treatment to ALD coatings on steel was studied. • The pre-treatment modified the coating–substrate interface composition and thickness. • The pre-treatment improved the barrier properties of the coatings

  19. Cathode encapsulation of OLEDs by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks

    NARCIS (Netherlands)

    Keuning, W.; Van de Weijer, P.; Lifka, H.; Kessels, W.M.M.; Creatore, M.

    2011-01-01

    Al2O3 thin films synthesized by plasma-enhanced atomic layer deposition(ALD) at room temperature (25 ºC) have been tested as water vapor per-meation barriers for OLED devices. Silicon nitride films (a-SiNx:H)deposited by plasma-enhanced chemical vapor deposition (PE-CVD) servedas reference and were

  20. Epitaxial Growth of V2O3 Thin Films on c-Plane Al2O3 in Reactive Sputtering and Its Transformation to VO2 Films by Post Annealing

    Science.gov (United States)

    Okimura, Kunio; Suzuki, Yasushi

    2011-06-01

    Epitaxial growth of thin vanadium sesquioxide (V2O3) films on c-plane sapphire (c-Al2O3) substrates was achieved with reactive magnetron sputtering under restricted oxygen flow. Even with a film thickness of approximately 12 nm, highly c-axis textured growth of corundum V2O3 was realized because of the smaller mismatch of V2O3 against corundum Al2O3. Post annealing in O2 atmosphere for as-grown V2O3 films caused phase transformation to oxidized crystalline phases. At a moderate annealing temperature of 450 °C, the V2O3 thin films transformed to VO2 films, which show a resistivity change of over three orders of magnitude. The X-ray photoelectron spectroscopy spectra for the annealed VO2 film showed a single charge state of V4+, indicating a homogeneous crystalline structure, in contrast to the inhomogeneous feature with mixed charge states of V in addition to V3+ for as-grown V2O3 film. This method is promising to prepare thin VO2 films with metal-insulator transition in productive reactive sputtering and to examine crystalline phase transformation mechanisms, including phase coexistence.

  1. Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

    Directory of Open Access Journals (Sweden)

    Joel Molina-Reyes

    2017-01-01

    Full Text Available We present the resistive switching characteristics of Metal-Insulator-Metal (MIM devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD. A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis, the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions which leaves some residuals and (b thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

  2. The investigation of ZnO:Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells

    International Nuclear Information System (INIS)

    Wang Guang-Hong; Zhao Lei; Yan Bao-Jun; Chen Jing-Wei; Wang Ge; Diao Hong-Wei; Wang Wen-Jing

    2013-01-01

    Different aluminum-doped ZnO (AZO)/metal composite thin films, including AZO/Ag/Al, AZO/Ag/nickel—chromium alloy (NiCr), and AZO/Ag/NiCr/Al, are utilized as the back reflectors of p—i—n amorphous silicon germanium thin film solar cells. NiCr is used as diffusion barrier layer between Ag and Al to prevent mutual diffusion, which increases the short circuit current density of solar cell. NiCr and NiCr/Al layers are used as protective layers of Ag layer against oxidation and sulfurization, the higher efficiency of solar cell is achieved. The experimental results show that the performance of a-SiGe solar cell with AZO/Ag/NiCr/Al back reflector is best. The initial conversion efficiency is achieved to be 8.05%

  3. Properties of low-temperature passivation of silicon with ALD Al2O3 films and their PV applications

    Science.gov (United States)

    Kim, Kwang-Ho; Kim, Hyun-Jun; Jang, Pyungwoo; Jung, Chisup; Seomoon, Kyu

    2011-06-01

    Low-temperature-deposited aluminium oxide (Al2O3) thin films were grown on p-type Si substrates by the remote plasma atomic layer deposition (RPALD) technique. The RPALD technique uses an alternative trimethylaluminum precursor and oxygen radicals to obtain good interface properties for metal-insulatorsemiconductor (MIS) inversion-layer solar cell applications. Si MIS capacitors with ultra-thin Al2O3 (film thickness ranges from 1 nm to 6 nm) gate dielectric and SiNx films were fabricated at 300°C and at room temperature (RT), respectively. Low-temperature-deposited Al2O3 and SiNx films were characterized by electrical properties such as capacitance-voltage (C-V), and current-voltage (I-V). The interface state density (Dit) of the MIS capacitors with SiNx films and without SiNx films was derived from the 1 MHz frequency C-V curves. By using ultra-thin RPALD Al2O3, RT-sputtered SiNx films and a simple fabrication-processing sequence, MIS solar cells were fabricated on 1 Ω·cm to 10 Ω·cm p-Si wafers. The fabricated MIS solar cell with passivated Al2O3 and SiNx films has 8.21% efficiency.

  4. Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

    Science.gov (United States)

    Khosa, R. Y.; Thorsteinsson, E. B.; Winters, M.; Rorsman, N.; Karhu, R.; Hassan, J.; Sveinbjörnsson, E. Ö.

    2018-02-01

    We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakdown field (5MV/cm) than Al2O3 films grown by atomic layer deposition (ALD) or rapid thermal processing (RTP). Furthermore, the interface state density is significantly lower than in MOS capacitors with nitrided thermal silicon dioxide, grown in N2O, serving as the gate dielectric. Deposition of an additional SiO2 film on the top of the Al2O3 layer increases the breakdown voltage of the MOS capacitors while maintaining low density of interface traps. We examine the origin of negative charges frequently encountered in Al2O3 films grown on SiC and find that these charges consist of trapped electrons which can be released from the Al2O3 layer by depletion bias stress and ultraviolet light exposure. This electron trapping needs to be reduced if Al2O3 is to be used as a gate dielectric in SiC MOS technology.

  5. A thin layer fiber-coupled luminescence dosimeter based on Al2O3:C

    DEFF Research Database (Denmark)

    Klein, F.A.; Greilich, Steffen; Andersen, Claus Erik

    2011-01-01

    In this paper we present a fiber-coupled luminescent Al2O3:C dosimeter probe with high spatial resolution (0.1 mm). It is based on thin layers of Al2O3:C crystal powder and a UV-cured acrylate monomer composition. The fabrication of the thin layers is described in detail. No influence of the intr......In this paper we present a fiber-coupled luminescent Al2O3:C dosimeter probe with high spatial resolution (0.1 mm). It is based on thin layers of Al2O3:C crystal powder and a UV-cured acrylate monomer composition. The fabrication of the thin layers is described in detail. No influence...

  6. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks

    Science.gov (United States)

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-03-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 1012 to 1 × 1012 cm-2 eV-1, the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 1012 cm-2 for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

  7. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks

    OpenAIRE

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-S...

  8. RBS characterization of Al2O3 films doped with Ce and Mn

    International Nuclear Information System (INIS)

    Martinez-Martinez, R.; Rickards, J.; Garcia-Hipolito, M.; Trejo-Luna, R.; Martinez-Sanchez, E.; Alvarez-Fregoso, O.; Ramos-Brito, F.; Falcony, C.

    2005-01-01

    Rutherford backscattering (RBS) with 4 He energies from 2 to 6 MeV has been used to study the properties of thin amorphous photoluminescent Al 2 O 3 :Ce,Mn films grown by spray pyrolysis on Corning 7059 glass substrates. The source solutions were AlCl 3 , CeCl 3 and MnCl 2 dissolved in deionized water. Different molar concentrations (Ce 10%; Mn 1%, 3%, 5%, 7% and 10%) were investigated under the same deposition conditions at a substrate temperature of 300 deg. C. The RBS spectra show a homogeneous depth profile of both Ce and Mn within the films, and the measured quantities are consistent with the original solution concentrations. An important amount of Cl, which plays a significant role in luminescent properties, was detected, in both the doped and undoped samples

  9. Anisotropic temperature-dependent thermal conductivity by an Al2O3 interlayer in Al2O3/ZnO superlattice films.

    Science.gov (United States)

    Lee, Won-Yong; Lee, Jung-Hoon; Ahn, Jae-Young; Park, Tae-Hyun; Park, No-Won; Kim, Gil-Sung; Park, Jin-Seong; Lee, Sang-Kwon

    2017-03-10

    The thermal conductivity of superlattice films is generally anisotropic and should be studied separately in the in-plane and cross-plane directions of the films. However, previous works have mostly focused on the cross-plane thermal conductivity because the electrons and phonons in the cross-plane direction of superlattice films may result in much stronger interface scattering than that in the in-plane direction. Nevertheless, it is highly desirable to perform systematic studies on the effect of interface formation in semiconducting superlattice films on both in-plane and cross-plane thermal conductivities. In this study, we determine both the in-plane and cross-plane thermal conductivities of Al 2 O 3 (AO)/ZnO superlattice films grown by atomic layer deposition (ALD) on SiO 2 /Si substrates in the temperature range of 50-300 K by the four-point-probe 3-ω method. Our experimental results indicate that the formation of an atomic AO layer (0.82 nm) significantly contributes to the decrease of the cross-plane thermal conductivity of the AO/ZnO superlattice films compared with that of AO/ZnO thin films. The cross-plane thermal conductivity (0.26-0.63 W m -1 K -1 of the AO/ZnO superlattice films (with an AO layer of ∼0.82 nm thickness) is approximately ∼150%-370% less than the in-plane thermal conductivity (0.96-1.19 W m -1 K -1 ) of the corresponding film, implying significant anisotropy. This indicates that the suppression of the cross-plane thermal conductivity is mainly attributed to the superlattice, rather than the nanograin columnar structure in the films. In addition, we theoretically analyzed strong anisotropic behavior of the in-plane and cross-plane thermal conductivities of the AO/ZnO superlattice films in terms of temperature dependence.

  10. Spatial structure of radio frequency ring-shaped magnetized discharge sputtering plasma using two facing ZnO/Al2O3 cylindrical targets for Al-doped ZnO thin film preparation

    Directory of Open Access Journals (Sweden)

    Takashi Sumiyama

    2017-05-01

    Full Text Available Spatial structure of high-density radio frequency ring-shaped magnetized discharge plasma sputtering with two facing ZnO/Al2O3 cylindrical targets mounted in ring-shaped hollow cathode has been measured and Al-doped ZnO (AZO thin film is deposited without substrate heating. The plasma density has a peak at ring-shaped hollow trench near the cathode. The radial profile becomes uniform with increasing the distance from the target cathode. A low ion current flowing to the substrate of 0.19 mA/cm2 is attained. Large area AZO films with a resistivity of 4.1 – 6.7×10-4 Ω cm can be prepared at a substrate room temperature. The transmittance is 84.5 % in a visible region. The surface roughnesses of AZO films are 0.86, 0.68, 0.64, 1.7 nm at radial positions of r = 0, 15, 30, 40 mm, respectively, while diffraction peak of AZO films is 34.26°. The grains exhibit a preferential orientation along (002 axis.

  11. Ethanol gas sensing properties of Al2 O3-doped ZnO thick film ...

    Indian Academy of Sciences (India)

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

  12. Antireflective bilayer coatings based on Al2O3 film for UV region

    OpenAIRE

    Marszałek Konstanty; Winkowski Paweł; Marszałek Marta

    2015-01-01

    Bilayer antireflective coatings consisting of aluminium oxide Al2O3/MgF2 and Al2O3/SiO2 are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5 × 10-3 Pa in the presence of oxygen, and magnesium fluoride was prepared by thermal evaporation on heated optical lenses made from quartz glass (Corning HPFS). Substrate temperature was maintained at 250 _C during the deposition. Thickness and deposition rate were controlled with a thickness measuring syste...

  13. Structural Characteristics and Magnetic Properties of Al2O3 Matrix-Based Co-Cermet Nanogranular Films

    Directory of Open Access Journals (Sweden)

    Giap Van Cuong

    2015-01-01

    Full Text Available Magnetic micro- and nanogranular materials prepared by different methods have been used widely in studies of magnetooptical response. However, among them there seems to be nothing about magnetic nanogranular thin films prepared by a rf cosputtering technique for both metals and insulators till now. This paper presented and discussed preparation, structural characteristics, and magnetic properties of alumina (Al2O3 matrix-based granular Co-cermet thin films deposited by means of the cosputtering technique for both Co and Al2O3. By varying the ferromagnetic (Co atomic fraction, x, from 0.04 to 0.63, several dominant features of deposition for these thin films were shown. Structural characteristics by X-ray diffraction confirmed a cermet-type structure for these films. Furthermore, magnetic behaviours presented a transition from paramagnetic- to superparamagnetic- and then to ferromagnetic-like properties, indicating agglomeration and growth following Co components of Co clusters or nanoparticles. These results show a typical granular Co-cermet feature for the Co-Al2O3 thin films prepared, in which Co magnetic nanogranules are dispersed in a ceramic matrix. Such nanomaterials can be applied suitably for our investigations in future on the magnetooptical responses of spinplasmonics.

  14. Antireflective bilayer coatings based on Al2O3 film for UV region

    Directory of Open Access Journals (Sweden)

    Marszałek Konstanty

    2015-03-01

    Full Text Available Bilayer antireflective coatings consisting of aluminium oxide Al2O3/MgF2 and Al2O3/SiO2 are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5 × 10-3 Pa in the presence of oxygen, and magnesium fluoride was prepared by thermal evaporation on heated optical lenses made from quartz glass (Corning HPFS. Substrate temperature was maintained at 250 _C during the deposition. Thickness and deposition rate were controlled with a thickness measuring system Inficon XTC/2. The experimental results of the optical measurements carried out during and after the deposition process have been presented. Physical thickness measurements were made during the deposition process and resulted in 44 nm/52 nm for Al2O3/MgF2 and 44 nm/50 nm for Al2O3/SiO2 system. Optimization was carried out for ultraviolet region with minimum of reflectance at 300 nm. The influence of post deposition annealing on the crystal structure was determined by X-ray measurements. In the range from ultraviolet to the beginning of visible region, the reflectance of both systems decreased and reached minimum at 290 nm. The value of reflectance at this point, for the coating Al2O3/MgF2 was equal to R290nm = 0.6 % and for Al2O3/SiO2R290nm = 1.1 %. Despite the difference between these values both are sufficient for applications in the UV optical systems for medicine and UV laser technology.

  15. The impact of ultrathin Al2O3 films on the electrical response of p-Ge/Al2O3/HfO2/Au MOS structures

    Science.gov (United States)

    Botzakaki, M. A.; Skoulatakis, G.; Kennou, S.; Ladas, S.; Tsamis, C.; Georga, S. N.; Krontiras, C. A.

    2016-09-01

    It is well known that the most critical issue in Ge CMOS technology is the successful growth of high-k gate dielectrics on Ge substrates. The high interface quality of Ge/high-k dielectric is connected with advanced electrical responses of Ge based MOS devices. Following this trend, atomic layer deposition deposited ultrathin Al2O3 and HfO2 films were grown on p-Ge. Al2O3 acts as a passivation layer between p-Ge and high-k HfO2 films. An extensive set of p-Ge/Al2O3/HfO2 structures were fabricated with Al2O3 thickness ranging from 0.5 nm to 1.5 nm and HfO2 thickness varying from 2.0 nm to 3.0 nm. All structures were characterized by x-ray photoelectron spectroscopy (XPS) and AFM. XPS analysis revealed the stoichiometric growth of both films in the absence of Ge sub-oxides between p-Ge and Al2O3 films. AFM analysis revealed the growth of smooth and cohesive films, which exhibited minimal roughness (~0.2 nm) comparable to that of clean bare p-Ge surfaces. The electrical response of all structures was analyzed by C-V, G-V, C-f, G-f and J-V characteristics, from 80 K to 300 K. It is found that the incorporation of ultrathin Al2O3 passivation layers between p-Ge and HfO2 films leads to superior electrical responses of the structures. All structures exhibit well defined C-V curves with parasitic effects, gradually diminishing and becoming absent below 170 K. D it values were calculated at each temperature, using both Hill-Coleman and Conductance methods. Structures of p-Ge/0.5 nm Al2O3/2.0 nm HfO2/Au, with an equivalent oxide thickness (EOT) equal to 1.3 nm, exhibit D it values as low as ~7.4  ×  1010 eV-1 cm-2. To our knowledge, these values are among the lowest reported. J-V measurements reveal leakage currents in the order of 10-1 A cm-2, which are comparable to previously published results for structures with the same EOT. A complete mapping of the energy distribution of D its into the energy bandgap of p-Ge, from the valence band

  16. From two- to three-dimensional alumina: Interface templated films and formation of γ -Al2O3 (111) nuclei

    Science.gov (United States)

    Zabka, Wolf-Dietrich; Leuenberger, Dominik; Mette, Gerson; Osterwalder, Jürg

    2017-10-01

    Oxide thin films are of fundamental importance due to their applications in materials science, optics, corrosion protection, catalysis, and microelectronics. A multistep oxidation procedure is employed to precisely tune the alumina (Al2O3 ) thickness on a NiAl(110) alloy from two atomic bilayers to 1.5 nm . Structural changes are analyzed with x-ray photoelectron diffraction and low-energy electron diffraction. The long-range order does not relate to any bulk structure and is imposed by the crystallized interface. The large unit cell formed at the interface persists in thicker films. In contrast, the local order changes at a thickness above 0.5 nm from the complex structure of this prelayer under the formation of subnanometer-sized γ -Al2O3 (111)-type nuclei. The band structure is monitored with angle-resolved photoelectron spectroscopy. Increasing film thickness results in a slight decrease of the work function, but does not lead to significant changes of the electronic band structure. The presented multistep procedure opens a route for the synthesis of thin film structures in general and in particular provides fundamental insight in the surface structure of spinel-based transition Al2O3 .

  17. Argon Ion Irradiation Effect on the Magnetic Properties of Fe-Al2O3 Nano Granular Film

    Directory of Open Access Journals (Sweden)

    Setyo Purwanto

    2014-10-01

    Full Text Available We studied the effect of Argon (Ar ion irradiation on Fe-Al2O3 nanogranular thin film. X-ray diffraction (XRD patterns show that the ion dose might promote the growth of the Fe2O3 phase from an amorphous phase to a crystalline phase. The magnetic and magnetoresistance properties were investigated using a vibrating sample magnetometer (VSM and a four point probe (FPP. The results suggest that percolation concentration occurred at the 0.55 Fe volume fraction and with a maximum magnetoresistance (MR ratio of 3%. The present MR ratio was lower than that of previous results, which might be related to the existence of the α-Fe2O3 phase promoted by Ar ion irradiation. CEMS spectra show ion irradiation induces changes from superparamagnetic characteristics to ferromagnetic ones, which indicates the spherical growth of Fe particles in the Al2O3 matrix.

  18. Preparation and characterization of carbonate terminated polycrystalline Al2O3/Al films

    International Nuclear Information System (INIS)

    X-ray photoelectron spectroscopy (XPS) was applied to investigate the surface reactivity of polycrystalline Al films in contact with a gas mixture of carbon dioxide and oxygen at room temperature. Based on the characterization of interactions between these substrates and the individual gases at selected exposures, various surface functionalities were identified. Simultaneously dosing both carbon dioxide and oxygen is shown to create surface-terminating carbonate species, which contribute to inhibiting the formation of an Al 2 O 3 layer. Finally, a reaction scheme is suggested to account for the observed dependence of surface group formation on the dosing conditions

  19. Stabilization of Hydrogen Production via Methanol Steam Reforming in Microreactor by Al2O3 Nano-Film Enhanced Catalyst Adhesion.

    Science.gov (United States)

    Jeong, Heondo; Na, Jeong-Geol; Jang, Min Su; Ko, Chang Hyun

    2016-05-01

    In hydrogen production by methanol steam reforming reaction with microchannel reactor, Al2O3 thin film formed by atomic layer deposition (ALD) was introduced on the surface of microchannel reactor prior to the coating of catalyst particles. Methanol conversion rate and hydrogen production rate, increased in the presence of Al2O3 thin film. Over-view and cross-sectional scanning electron microscopy study showed that the adhesion between catalyst particles and the surface of microchannel reactor enhanced due to the presence of Al2O3 thin film. The improvement of hydrogen production rate inside the channels of microreactor mainly came from the stable fixation of catalyst particles on the surface of microchannels.

  20. Effects of UV-Ozone Treatment on Sensing Behaviours of EGFETs with Al2O3 Sensing Film

    Directory of Open Access Journals (Sweden)

    Cuiling Sun

    2017-12-01

    Full Text Available The effects of UV-ozone (UVO treatment on the sensing behaviours of extended-gate field-effect transistors (EGFETs that use Al2O3 as the sensing film have been investigated. The Al2O3 sensing films are UVO-treated with various duration times and the corresponding EGFET sensing behaviours, such as sensitivity, hysteresis, and long-term stability, are electrically evaluated under various measurement conditions. Physical analysis is also performed to characterize the surface conditions of the UVO-treated sensing films using X-ray photoelectron spectroscopy and atomic force microscopy. It is found that UVO treatment effectively reduces the buried sites in the Al2O3 sensing film and subsequently results in reduced hysteresis and improved long-term stability of EGFET. Meanwhile, the observed slightly smoother Al2O3 film surface post UVO treatment corresponds to decreased surface sites and slightly reduced pH sensitivity of the Al2O3 film. The sensitivity degradation is found to be monotonically correlated with the UVO treatment time. A treatment time of 10 min is found to yield an excellent performance trade-off: clearly improved long-term stability and reduced hysteresis at the cost of negligible sensitivity reduction. These results suggest that UVO treatment is a simple and facile method to improve the overall sensing performance of the EGFETs with an Al2O3 sensing film.

  1. Enhanced photoluminescence of corrugated Al2O3 film assisted by colloidal CdSe quantum dots.

    Science.gov (United States)

    Bai, Zhongchen; Hao, Licai; Zhang, Zhengping; Huang, Zhaoling; Qin, Shuijie

    2017-05-19

    We present the enhanced photoluminescence (PL) of a corrugated Al 2 O 3 film enabled by colloidal CdSe quantum dots. The colloidal CdSe quantum dots are fabricated directly on a corrugated Al 2 O 3 substrate using an electrochemical deposition (ECD) method in a microfluidic system. The photoluminescence is excited by using a 150 nm diameter ultraviolet laser spot of a scanning near-field optical microscope. Owing to the electron transfer from the conduction band of the CdSe quantum dots to that of Al 2 O 3 , the enhanced photoluminescence effect is observed, which results from the increase in the recombination rate of electrons and holes on the Al 2 O 3 surface and the reduction in the fluorescence of the CdSe quantum dots. A periodically-fluctuating fluorescent spectrum was exhibited because of the periodical wire-like corrugated Al 2 O 3 surface serving as an optical grating. The spectral topographic map around the fluorescence peak from the Al 2 O 3 areas covered with CdSe quantum dots was unique and attributed to the uniform deposition of CdSe QDs on the corrugated Al 2 O 3 surface. We believe that the microfluidic ECD system and the surface enhanced fluorescence method described in this paper have potential applications in forming uniform optoelectronic films of colloidal quantum dots with controllable QD spacing and in boosting the fluorescent efficiency of weak PL devices.

  2. Fabrication of Al2O3 Nano-Structure Functional Film on a Cellulose Insulation Polymer Surface and Its Space Charge Suppression Effect

    Directory of Open Access Journals (Sweden)

    Jian Hao

    2017-10-01

    Full Text Available Cellulose insulation polymer (paper/pressboard has been widely used in high voltage direct current (HVDC transformers. One of the most challenging issues in the insulation material used for HVDC equipment is the space charge accumulation. Effective ways to suppress the space charge injection/accumulation in insulation material is currently a popular research topic. In this study, an aluminium oxide functional film was deposited on a cellulose insulation pressboard surface using reactive radio frequency (RF magnetron sputtering. The sputtered thin film was characterized by the scanning electron microscopy/energy dispersive spectrometer (SEM/EDS, X-ray photoelectron spectroscopy (XPS, and X-ray diffraction (XRD. The influence of the deposited functional film on the dielectric properties and the space charge injection/accumulation behaviour was investigated. A preliminary exploration of the space charge suppression effect is discussed. SEM/EDS, XPS, and XRD results show that the nano-structured Al2O3 film with amorphous phase was successfully fabricated onto the fibre surface. The cellulose insulation pressboard surface sputtered by Al2O3 film has lower permittivity, conductivity, and dissipation factor values in the lower frequency (<103 Hz region. The oil-impregnated sputtered pressboard presents an apparent space-charge suppression effect. Compared with the pressboard sputtered with Al2O3 film for 90 min, the pressboard sputtered with Al2O3 film for 60 min had a better space charge suppression effect. Ultra-small Al2O3 particles (<10 nm grew on the surface of the larger nanoparticles. The nano-structured Al2O3 film sputtered on the fibre surface could act as a functional barrier layer for suppression of the charge injection and accumulation. This study offers a new perspective in favour of the application of insulation pressboard with a nano-structured function surface against space charge injection/accumulation in HVDC equipment.

  3. Preparation of Al2O3 Supports for Thin Membrane Fabrication

    Directory of Open Access Journals (Sweden)

    Berna Topuz

    2017-12-01

    Full Text Available In this study, macroporous a-alumina supports were prepared by using vacuum-assisted filtration of α-Al2O3 suspensions with different particle size. The average particle sizes of the powders are 400 and 200 nm. The prepared supports had smooth and uniform surface microstructure and well suited for the fabrication of thin continuous membrane. The microstructure consists of a random close packing of 200 nm particles led to improved surface uniformity and roughness. ZnO spheres were prepared by homogeneous precipitation and added to the colloidal suspension to modify the support structure and increase the support flux. Structural parameters such as pore diameter and tortuosity of the prepared macroporous supports were estimated by using He, N2, CO2 permeance measurements. Slight pressure dependence in the permeance values indicated the contribution of viscous flow to the Knudsen flow. The supports prepared by alumina powder with a larger particle size exhibited He permeance of three times higher than that of prepared with a smaller particle size. The addition of ZnO resulted in the increase in He permeance value significantly for the support prepared by 400 nm particles in size. He permeance was in a range of 8.5-8.7x10-6 mol/(m2sPa which is very close to the desired value of 1x10-5 mol/(m2sPa.

  4. Tunneling Magnetoresistance (TMR on Fe-Al2O3 Nano Granular Film Growth by Helicon Plasma Sputtering

    Directory of Open Access Journals (Sweden)

    S. Purwanto

    2008-01-01

    Full Text Available Fe-Al2O3 nanogranular thin film by helicon plasma sputtering with the variation of Fe content from 0.1 to 0.7 volume fraction have been prepared. The magnetic and magnetoresistance properties were investigated by a Vibrating Sample Magnetometer (VSM and a Four Point Probe (FPP. The Rutherford BackScattering (RBS was performed with the SIMNRA software. Conversion Electron Mossbauer Spectroscopy (CEMS study was also performed to estimate the fraction of Fe and α-Fe2O3 in the granular film. The results suggested that the percolation concentration occured at 0.55 Fe volume fractions, with the maximum Magnetoresistance (MR ratio of 3%. The present MR ratio that was lower than the previous results may be related to the existence of α-Fe2O3 phase.

  5. Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

    Directory of Open Access Journals (Sweden)

    Jörg Haeberle

    2013-11-01

    Full Text Available We report on results on the preparation of thin (2O3 films on silicon substrates using thermal atomic layer deposition (T-ALD and plasma enhanced atomic layer deposition (PE-ALD in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

  6. Use of fluorescence to probe the surface dynamics during disorder-to-order transition and cluster formation in dihalonaphthalene-water thin films on Al2O3(0001)

    International Nuclear Information System (INIS)

    Evans, M.A.; Hoss, D.R.; Howard, K.E.; Louie, A.D.; Bishop, A.J.; Martin, K.A.; Nishimura, A.M.

    2006-01-01

    Amorphous dihalonaphthalenes that are prepared by vacuum deposition onto a cold Al 2 O 3 surface form electronically excited dimers when optically pumped, and their emission is characteristically red-shifted, broad and featureless compared to the monomeric fluorescence. If the surface is heated, the adlayer undergoes a disorder-to-order transition at a temperature characteristic of the molecule. Since pure crystalline dihalonaphthalenes typically fluoresce and do not exhibit excimeric features, the transition was studied by taking advantage of the changes in the spectral characteristics of the adlayer. These included transmittance, and emission from fluorescence and excimer. The combination of these methods allowed a close look at the surface dynamics of molecules on the surface of Al 2 O 3 as the adlayer was heated from the deposition temperature to desorption. If a bilayer is formed by depositing water onto the surface with the organic adlayer on top, water, with its lower desorption energy, can be made to percolate into the organic layer. The optical probes indicate that the water clearly associates with the organic molecules while the excess water desorbs. By varying the coverage of either the water or the dihalonaphthalene, the stoichiometric composition of the cluster can be determined and are reported here

  7. Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

    Directory of Open Access Journals (Sweden)

    Kyosuke Seya

    2015-01-01

    Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

  8. Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films

    DEFF Research Database (Denmark)

    Lu, Weifang; Ou, Yiyu; Jokubavicius, Valdas

    2016-01-01

    The influence of thickness of atomic layer deposited Al2O3 films on nano-textured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show...... as passivation in fluorescent SiC based white LEDs applications....

  9. Development of α - Al2O3:C films nanoparticulate for application in digital radiology

    International Nuclear Information System (INIS)

    Silva, Edna C.; Fontainha, Crissia C.; Ferraz, Wilmar B.; Faria, Luiz O.

    2011-01-01

    Phosphorescent ceramics are widely used in Ionizing radiation sensors. In nuclear applications, alpha-alumina doped with carbon (α-Al 2 O 3 : C) is most commonly used because of its excellent properties photoluminescent (OSL) and thermoluminescent (TL) in ionizing radiation detections. Another application of OSL and TL materials is the use in digital radiography. Recently, Computerized Radiography (CR) equipment, which use OSL materials, have been replacing the old X-ray devices. In this work we investigated the thermoluminescence of α-Al 2 O 3 doped with different percentages of carbon, sintered in reducing atmospheres, in temperatures from 1300 to 1750 ° C. The results indicate that micro alumina doped with 0.5% of carbon and nano-alumina doped with 2% of carbon present TL signal of the order of 30 to 100 times the signal of the TLD-100, the most widely used TL dosimeter in the world. The results indicate that α-Al 2 O 3 : C nano-particulate has great potential for application in digital thermoluminescent radiography, because of its high TL response to radiation Ionization and the possibility of forming TL digital images with resolution increased by about 1000 times, depending on the size of the nanoparticles

  10. Fabrication and magnetic properties of FePt/Al2O3 composite film by atomic-layer-deposition

    International Nuclear Information System (INIS)

    Kong, Ji-Zhou; Gao, Mo-Yun; Zhai, Hai-Fa; Yan, Qing-Yu; Li, Ai-Dong; Li, Hui; Wu, Di

    2013-01-01

    Self-assembled face-centered cubic FePt nanoparticles were capped by a amorphous Al 2 O 3 capping layer with the thickness of 10 nm using the atomic layer deposition (ALD) technology, and transmission electron microscopy indicates that the FePt nanocrystals are well-separated. After annealing the composite film at 700 °C, well-monodispersed face-centered tetragonal FePt particles can be obtained, yielding a coercivity value Hc=5.9 kOe with the magnetocrystalline anisotropy of 3.86 MJ/m 3 . The thermal factor for the composite film is 68.5, meeting the industry requirement (K u V/k B T ≥ 50). The protection of amorphous Al 2 O 3 matrix can effectively inhibit grain growth and particle aggregation, and preserve the ordered domains of FePt nanoparticles during the L1 0 ordering transition. The combination of ALD-capping layer and self-assembled FePt nanoparticles provides a new potential approach to fabricate patterned magnetic recording media with ultrahigh areal density. - Highlights: • Well-monodispersed fcc-FePt NPs were prepared via chemical reduction. • Self-assembled fcc-FePt NPs were capped by Al 2 O 3 layer via ALD. • Al 2 O 3 capping layer can prevent particles from agglomerating and sintering. • A coercivity of 5.9 kOe with the magnetocrystalline anisotropy of 3.86 MJ/m 3 was obtained. • The thermal factor of the composite film is 68.5, meeting the industry requirement

  11. Band alignment and electrical investigations of ultra-thin Al2O3 on Si by E-beam evaporation

    Science.gov (United States)

    Kumar, Arvind; Mondal, Sandip; Rao, K. S. R. Koteswara

    2017-05-01

    The continuous downscaling leads the search of high-κ gate dielectrics. The films amorphous in nature offered good mechanical flexibility, smooth surfaces and better uniformity associated with low leakage current density. In this work, ˜ 16 nm thick amorphous Al2O3 films on silicon substrate are fabricated by E-beam evaporation. The high value of refractive index (1.76) extracted from ellipsometry analysis directs the deposition of compact film. The AFM analysis reveal a flat surface with small RMS surface roughness 1.5 Å. The band gap is extracted from O1s electron loss spectra and was found 6.7 eV and band alignment of Al2O3/Si is derived from the UPS measurements. The films are incorporated in Metal - Insulator - Semiconductor (MIS) capacitor to perform the electrical measurement. The flat band voltage (VFB), dielectric constant (κ) and oxide trapped charges (Qot) extracted from high frequency (1 MHz) C-V curve are - 0.4 V, 8.4 and 2 × 1011 cm-2, respectively. The small flat band voltage - 0.4 V, narrow hysteresis and very little frequency dispersion suggest an exceptional good Al2O3/Si interface with small quantity of trapped charges in the oxide. The leakage current density was 4.27 × 10-8 A/cm2 at 1 V. The moderate dielectric constant and low leakage current density with ultra-smooth surface is quite useful towards its application in future CMOS and memory devices.

  12. Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

    Science.gov (United States)

    Pazos, S.; Aguirre, F.; Miranda, E.; Lombardo, S.; Palumbo, F.

    2017-03-01

    In this work, the breakdown transients of A l 2 O 3 - and HfO2-based metal-insulator-metal (MIM) stacks with the same oxide thickness and identical metal electrodes were compared. Their connection with the thermal properties of the materials was investigated using alternative experimental setups. The differences and similarities between these transients in the fast and progressive breakdown regimes were assessed. According to the obtained results, A l 2 O 3 exhibits longer breakdown transients than HfO2 and requires a higher voltage to initiate a very fast current runaway across the dielectric film. This distinctive behavior is ascribed to the higher thermal conductivity of A l 2 O 3 . Overall results link the breakdown process to the thermal properties of the oxides under test rather than to dissipation effects occurring at the metal electrodes.

  13. Impact of ultra-thin Al2O3-y layers on TiO2-x ReRAM switching characteristics

    Science.gov (United States)

    Trapatseli, Maria; Cortese, Simone; Serb, Alexander; Khiat, Ali; Prodromakis, Themistoklis

    2017-05-01

    Transition metal-oxide resistive random access memory devices have demonstrated excellent performance in switching speed, versatility of switching and low-power operation. However, this technology still faces challenges like poor cycling endurance, degradation due to high electroforming (EF) switching voltages and low yields. Approaches such as engineering of the active layer by doping or addition of thin oxide buffer layers have been often adopted to tackle these problems. Here, we have followed a strategy that combines the two; we have used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin films taking into account both 3+/4+ oxidation states of Al/Ti cations. Our devices were tested by DC and pulsed voltage sweeping and in both cases demonstrated improved switching voltages. We believe that the Al2O3-y layers act as reservoirs of oxygen vacancies which are injected during EF, facilitate a filamentary switching mechanism and provide enhanced filament stability, as shown by the cycling endurance measurements.

  14. Epitaxial growth and electric properties of γ-Al2O3(110) films on β-Ga2O3(010) substrates

    Science.gov (United States)

    Hattori, Mai; Oshima, Takayoshi; Wakabayashi, Ryo; Yoshimatsu, Kohei; Sasaki, Kohei; Masui, Takekazu; Kuramata, Akito; Yamakoshi, Shigenobu; Horiba, Koji; Kumigashira, Hiroshi; Ohtomo, Akira

    2016-12-01

    Epitaxial growth and electrical properties of γ-Al2O3 films on β-Ga2O3(010) substrates were investigated regarding the prospect of a gate oxide in a β-Ga2O3-based MOSFET. The γ-Al2O3 films grew along the [110] direction and inherited the oxygen sublattice from β-Ga2O3 resulting in the unique in-plane epitaxial relationship of γ-Al2O3 [\\bar{1}10] ∥ β-Ga2O3[001]. We found that the γ-Al2O3 layer had a band gap of 7.0 eV and a type-I band alignment with β-Ga2O3 with conduction- and valence-band offsets of 1.9 and 0.5 eV, respectively. A relatively high trap density (≅ 2 × 1012 cm-2 eV-1) was found from the voltage shift of photoassisted capacitance-voltage curves measured for a Au/γ-Al2O3/β-Ga2O3 MOS capacitor. These results indicate good structural and electric properties and some limitations hindering the better understanding of the role of the gate dielectrics (a γ-Al2O3 interface layer naturally crystallized from amorphous Al2O3) in the β-Ga2O3 MOSFET.

  15. For progress in natural science: Materials international investigations of structural phase transformation and THz properties across metal–insulator transition in VO2/Al2O3 epitaxial films

    Directory of Open Access Journals (Sweden)

    Mengmeng Yang

    2015-10-01

    Full Text Available Vanadium dioxide (VO2 epitaxial thin films on (0001-oriented Al2O3 substrates were prepared using radio frequency (RF magnetron sputtering techniques. To study the metal-insulator-transition (MIT mechanism and extend the applications of VO2 epitaxial films at terahertz (THz band, temperature-dependent X-ray diffraction (XRD and THz time domain spectroscopy of the VO2 epitaxial films were performed. Both the lattice constants and THz transmission exhibited a similar and sharp transition that was similar to that observed for the electrical resistance. Consequently, the MIT of the VO2/Al2O3 epitaxial films should be co-triggered by the structural phase transition and electronic transition. Moreover, the very large resistance change (on the order of ~103 and THz response (with a transmission modulation ratio of ~87% in the VO2/Al2O3 epitaxial heterostructures are promising for electrical switch and electro-optical device applications.

  16. Ethanol gas sensing properties of Al2 O3 -doped ZnO thick film ...

    Indian Academy of Sciences (India)

    WINTEC

    -doped ZnO thick film resistors. D R PATIL, L A PATIL* and D P AMALNERKAR. †. Materials Research Lab, Pratap College, Amalner 425 401, India. †. Centre for Materials for Electronics Technology, Pune 411 008, India. MS received 13 July 2007. Abstract. The characterization and ethanol gas sensing properties of ...

  17. Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation

    Directory of Open Access Journals (Sweden)

    Neha Batra

    2015-06-01

    Full Text Available The effect of deposition temperature (Tdep and subsequent annealing time (tanl of atomic layer deposited aluminum oxide (Al2O3 films on silicon surface passivation (in terms of surface recombination velocity, SRV is investigated. The pristine samples (as-deposited show presence of positive fixed charges, QF. The interface defect density (Dit decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s is realized for Tdep ≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min.

  18. Atmospheric pressure chemical vapor deposition mechanism of Al 2O 3 film from AlCl 3 and O 2

    Science.gov (United States)

    Nasution, Indra; Velasco, Angelito; Kim, Hee-joon

    2009-01-01

    Aluminum oxide (Al 2O 3) films were deposited by atmospheric pressure chemical vapor deposition (AP-CVD) method from aluminum trichloride (AlCl 3), argon, and oxygen gas mixtures at temperatures ranging from 800 to 1000 °C. Alumina films with crystalline phases of γ- or θ-, and α-alumina were obtained starting at 800 °C. Increase in the relative amount of the α-phase as well as improvement in crystallinity is observed as temperature is increased to 1000 °C. The films have low chlorine content, which continued to decrease with increasing temperature. Analysis of the film growth rate on tubular substrates of varying diameters revealed a diffusion-limited growth from 800 to 950 °C and gas-phase reaction-limited growth at 1000 °C. The growth species is a cluster with size 1.2 nm at 800 °C and 0.9 nm at 950 °C. The gas-phase reaction constant at 1000 °C is 1.1/s.

  19. Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application

    Science.gov (United States)

    Panja, Rajeswar; Roy, Sourav; Jana, Debanjan; Maikap, Siddheswar

    2014-12-01

    Impact of the device size and thickness of Al2O3 film on the Cu pillars and resistive switching memory characteristics of the Al/Cu/Al2O3/TiN structures have been investigated for the first time. The memory device size and thickness of Al2O3 of 18 nm are observed by transmission electron microscope image. The 20-nm-thick Al2O3 films have been used for the Cu pillar formation (i.e., stronger Cu filaments) in the Al/Cu/Al2O3/TiN structures, which can be used for three-dimensional (3D) cross-point architecture as reported previously Nanoscale Res. Lett.9:366, 2014. Fifty randomly picked devices with sizes ranging from 8 × 8 to 0.4 × 0.4 μm2 have been measured. The 8-μm devices show 100% yield of Cu pillars, whereas only 74% successful is observed for the 0.4-μm devices, because smaller size devices have higher Joule heating effect and larger size devices show long read endurance of 105 cycles at a high read voltage of -1.5 V. On the other hand, the resistive switching memory characteristics of the 0.4-μm devices with a 2-nm-thick Al2O3 film show superior as compared to those of both the larger device sizes and thicker (10 nm) Al2O3 film, owing to higher Cu diffusion rate for the larger size and thicker Al2O3 film. In consequence, higher device-to-device uniformity of 88% and lower average RESET current of approximately 328 μA are observed for the 0.4-μm devices with a 2-nm-thick Al2O3 film. Data retention capability of our memory device of >48 h makes it a promising one for future nanoscale nonvolatile application. This conductive bridging resistive random access memory (CBRAM) device is forming free at a current compliance (CC) of 30 μA (even at a lowest CC of 0.1 μA) and operation voltage of ±3 V at a high resistance ratio of >104.

  20. Preparation and characterization of DLC/SiO2/Al2O3 nanofiltration ...

    Indian Academy of Sciences (India)

    Korea. MS received 12 July 2012; revised 27 September 2012. Abstract. High quality ceramic thin films were fabricated by thin film deposition process in semiconductor field in order to fabricate high performance carbon/SiO2/Al2O3 membrane. α-Al2O3 substrate was used as a support- ing material. A severe thermal stress ...

  1. Low temperature synthesis of α-Al2O3 films by high-power plasma-assisted chemical vapour deposition

    Science.gov (United States)

    Jiang, Kaiyun; Sarakinos, Kostas; Konstantinidis, Stephanos; Schneider, Jochen M.

    2010-08-01

    In this study, we deposit Al2O3 films using plasma-assisted chemical vapour deposition (PACVD) in an Ar-H2-O2-AlCl3 atmosphere. A novel generator delivering approximately 4 times larger power densities than those conventionally employed in PACVD enabling efficient AlCl3 dissociation in the gas phase as well as a more intense energetic bombardment of the growing film is utilized. We demonstrate that these deposition conditions allow for the growth of dense α-Al2O3 films with negligible Cl incorporation and elastic properties similar to those of the bulk α-Al2O3 at a temperature of 560 ± 10 °C.

  2. Enhanced self-repairing capability of sol-gel derived SrTiO3/nano Al2O3 composite films

    International Nuclear Information System (INIS)

    Yao, Manwen; Peng, Yong; Xiao, Ruihua; Li, Qiuxia; Yao, Xi

    2016-01-01

    SrTiO 3 /nano Al 2 O 3 inorganic nanocomposites were prepared by using a conventional sol-gel spin coating process. For comparison, SrTiO 3 films doped by equivalent amount of sol-Al 2 O 3 have also been investigated. Aluminum deposited by using vacuum evaporation was used as the top electrode. The nanocomposites exhibited a significantly enhanced dielectric strength of 506.9 MV/m, which was increased by 97.4% as compared with the SrTiO 3 films doped with sol-Al 2 O 3 . The leakage current maintained of the same order of microampere until the ultimate breakdown of the nanocomposites. The excellent electrical performances are ascribed to the anodic oxidation reaction in origin, which can repair the internal and/or surface defects of the films.

  3. Coercivity and morphology in Fe/NiO films deposited on nanoporous Al2O3 membranes

    Directory of Open Access Journals (Sweden)

    Enrique Navarro

    2015-11-01

    Full Text Available The occurrence of ferro-antiferromagnetic (F/AF interfaces in Fe/NiO bilayers brings about the possibility of controlling the Fe layer hysteretic properties through the unidirectional anisotropy induced by the presence of unbalanced, antiferromagnetic phase moments at that interface. In this work, we report on the Fe thickness and temperature dependencies of the hysteretic parameters measured in Fe/NiO bilayers deposited on Al2O3 nanoporous membranes. The Fe/NiO bilayers grew in a six-fold columnar way around each one of the membrane nanopores. The in-plane hysteresis loops measured by field cooling the samples down to different temperatures below 300 K, evidenced the occurrence of coercive forces larger than that associated to the Fe anisotropy field and also of significant loop shifts, both of them clearly linked to the occurrence of exchange bias at the Fe/NiO interfaces. The magnetization reversal mechanism active in the Fe/NiO bilayers essentially differs from that responsible for the reversal occurring in continuous films incorporating lithographed antidots, due to the fact that in our samples it does not involve either domain wall propagation or pinning, and the reversal events are spatially restricted to the Fe-covered, hexagonally closely packed dot-like tops of the NiO columns.

  4. Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

    Science.gov (United States)

    Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

    2018-04-01

    Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

  5. Silicon solar cells with Al2O3 antireflection coating

    Science.gov (United States)

    Dobrzański, Leszek A.; Szindler, Marek; Drygała, Aleksandra; Szindler, Magdalena M.

    2014-09-01

    The paper presents the possibility of using Al2O3 antireflection coatings deposited by atomic layer deposition ALD. The ALD method is based on alternate pulsing of the precursor gases and vapors onto the substrate surface and then chemisorption or surface reaction of the precursors. The reactor is purged with an inert gas between the precursor pulses. The Al2O3 thin film in structure of the finished solar cells can play the role of both antireflection and passivation layer which will simplify the process. For this research 50×50 mm monocrystalline silicon solar cells with one bus bar have been used. The metallic contacts were prepared by screen printing method and Al2O3 antireflection coating by ALD method. Results and their analysis allow to conclude that the Al2O3 antireflection coating deposited by ALD has a significant impact on the optoelectronic properties of the silicon solar cell. For about 80 nm of Al2O3 the best results were obtained in the wavelength range of 400 to 800 nm reducing the reflection to less than 1%. The difference in the solar cells efficiency between with and without antireflection coating was 5.28%. The LBIC scan measurements may indicate a positive influence of the thin film Al2O3 on the bulk passivation of the silicon.

  6. DC-magnetron sputtering of ZnO:Al films on (00.1)Al2O3 substrates from slip-casting sintered ceramic targets

    International Nuclear Information System (INIS)

    Miccoli, I.; Spampinato, R.; Marzo, F.; Prete, P.; Lovergine, N.

    2014-01-01

    Highlights: • ZnO:Al was DC-sputtered on sapphire >350 °C by slip-casting sintered AZO target. • Films are highly (00.1)-oriented, smooth and transparent in the NIR–visible range. • Films growth rate decreases with temperature, while their grain size increases. • A high temperature reduction for sticking coefficients of impinging species is proved. • We prove that Thornton model does not apply to high-temperature DC-sputtered ZnO. - Abstract: High (>350 °C) temperature DC-sputtering deposition of ZnO:Al thin films onto single-crystal (00.1) oriented Al 2 O 3 (sapphire) substrates is reported, using a ultrahigh-density, low-resistivity and low-cost composite ceramic target produced by slip-casting (pressureless) sintering of ZnO–Al 2 O 3 (AZO) powders. The original combination of high-angle θ–2θ (Bragg–Brentano geometry) X-ray diffraction with low angle θ–2θ X-ray reflectivity (XRR) techniques allows us to define the AZO target composition and investigate the structural properties and surface/interface roughness of as-sputtered ZnO:Al films; besides, the growth dynamics of ZnO:Al is unambiguously determined. The target turned out composed of the sole wurtzite ZnO and spinel ZnAl 2 O 4 phases. X-ray diffraction analyses revealed highly (00.1)-oriented (epitaxial) ZnO:Al films, the material mean crystallite size being in the 13–20 nm range and increasing with temperature between 350 °C and 450 °C, while the film growth rate (determined via XRR measurements) decreases appreciably. XRR spectra also allowed to determine rms surface roughness <1 nm for present films and showed ZnO:Al density changes by only a few percent between 350 °C and 450 °C. The latter result disproves the often-adopted Thornton model for the description of the sputter-grown ZnO films and instead points out toward a reduction of the sticking coefficients of impinging species, as the main origin of film growth rate and grain size dependence with temperature. Zn

  7. The effect of thermal annealing on the properties of Al2O3-films prepared by MOCVD at atmoshperic pressure

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Haanappel, V.A.C.; van Corbach, H.D.; Fransen, T.; Gellings, P.J.

    1994-01-01

    Thin films deposited at 330°C by metal organic chemical vapour deposition on stainless steel, type AISI 304, were annealed in a nitrogen atmosphere for 1, 2 and 4 h at 600, 700 and 800°C. The film properties, including the protection of the underlying substrate against high temperature corrosion,

  8. Low-temperature atomic layer deposition of SiO2/Al2O3 multilayer structures constructed on self-standing films of cellulose nanofibrils

    Science.gov (United States)

    Putkonen, Matti; Sippola, Perttu; Svärd, Laura; Sajavaara, Timo; Vartiainen, Jari; Buchanan, Iain; Forsström, Ulla; Simell, Pekka; Tammelin, Tekla

    2017-12-01

    In this paper, we have optimized a low-temperature atomic layer deposition (ALD) of SiO2 using AP-LTO® 330 and ozone (O3) as precursors, and demonstrated its suitability to surface-modify temperature-sensitive bio-based films of cellulose nanofibrils (CNFs). The lowest temperature for the thermal ALD process was 80°C when the silicon precursor residence time was increased by the stop-flow mode. The SiO2 film deposition rate was dependent on the temperature varying within 1.5-2.2 Å cycle-1 in the temperature range of 80-350°C, respectively. The low-temperature SiO2 process that resulted was combined with the conventional trimethyl aluminium + H2O process in order to prepare thin multilayer nanolaminates on self-standing CNF films. One to six stacks of SiO2/Al2O3 were deposited on the CNF films, with individual layer thicknesses of 3.7 nm and 2.6 nm, respectively, combined with a 5 nm protective SiO2 layer as the top layer. The performance of the multilayer hybrid nanolaminate structures was evaluated with respect to the oxygen and water vapour transmission rates. Six stacks of SiO2/Al2O with a total thickness of approximately 35 nm efficiently prevented oxygen and water molecules from interacting with the CNF film. The oxygen transmission rates analysed at 80% RH decreased from the value for plain CNF film of 130 ml m-2 d-1 to 0.15 ml m-2 d-1, whereas the water transmission rates lowered from 630 ± 50 g m-2 d-1 down to 90 ± 40 g m-2 d-1. This article is part of a discussion meeting issue `New horizons for cellulose nanotechnology'.

  9. Surface modified Al2O3 in fluorinated polyimide/Al2O3 ...

    Indian Academy of Sciences (India)

    the mechanical and thermal properties of polymers (Li et al. 2010). Herein, we wish to report the synthesis and characte- rization of fluorinated PI–Al2O3 nanocomposite films via in situ polymerization using different contents of surface modified Al2O3 nanoparticles as filler and fluorinated PI as the matrix. PI which was used ...

  10. Free standing TiO2 nanotube array electrodes with an ultra-thin Al2O3 barrier layer and TiCl4 surface modification for highly efficient dye sensitized solar cells

    Science.gov (United States)

    Gao, Xianfeng; Guan, Dongsheng; Huo, Jingwan; Chen, Junhong; Yuan, Chris

    2013-10-01

    Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications.Dye sensitized solar cells were fabricated with free standing TiO2 nanotube (TNT) array films, which were prepared by template assisted atomic layer deposition (ALD) with precise wall thickness control. Efforts to improve the photovoltaic performance were made by using Al2O3 barrier layer coating in conjunction with TiCl4 surface modification. An Al2O3 thin layer was deposited on the TNT electrode by ALD to serve as the charge recombination barrier, but it suffers from the drawback of decreasing the photoelectron injection from dye into TiO2 when the barrier layer became too thick. With the TiCl4 treatment in combination with optimal thickness coating, this problem could be avoided. The co-surface treated electrode presents superior surface property with low recombination rate and good electron transport property. A high conversion efficiency of 8.62% is obtained, which is about 1.8 times that of the device without surface modifications. Electronic supplementary information (ESI) available: UV-Vis spectra of desorbed N719 dyes from

  11. Atomic layer deposition of Al2O3 and Al2O3/TiO2 barrier coatings to reduce the water vapour permeability of polyetheretherketone

    International Nuclear Information System (INIS)

    Ahmadzada, Tamkin; McKenzie, David R.; James, Natalie L.; Yin, Yongbai; Li, Qing

    2015-01-01

    We demonstrate significantly enhanced barrier properties of polyetheretherketone (PEEK) against water vapour penetration by depositing Al 2 O 3 or Al 2 O 3 /TiO 2 nanofilms grown by atomic layer deposition (ALD). Nanoindentation analysis revealed good adhesion strength of a bilayer Al 2 O 3 /TiO 2 coating to PEEK, while the single layer Al 2 O 3 coating displayed flaking and delamination. We identified three critical design parameters for achieving the optimum barrier properties of ALD Al 2 O 3 /TiO 2 coatings on PEEK. These are a minimum total thickness dependent on the required water vapour transmission rate, the use of an Al 2 O 3 /TiO 2 bilayer coating and the application of the coating to both sides of the PEEK film. Using these design parameters, we achieved a reduction in moisture permeability of PEEK of over two orders of magnitude while maintaining good adhesion strength of the polymer–thin film system. - Highlights: • Atomic layer deposition of Al 2 O 3 /TiO 2 coatings reduced water vapour permeability. • Bilayer coatings reduced the permeability more than single layer coatings. • Bilayer coatings displayed higher adhesion strength than the single layer coatings. • Double-sided coatings performed better than single-sided coatings. • Correlation was found between total thickness and reduced water vapour permeability.

  12. Optimization of Wet or Dry Micro-blasting on PVD Films by Various Al2O3 Grain Sizes for Improving the Coated Tools' Cutting Performance

    Directory of Open Access Journals (Sweden)

    K. -D. Bouzakis

    2011-06-01

    Full Text Available Micro-blasting on PVD coated tools is an effective technology for improving their cutting performance. Through micro-blasting, compressive stresses are induced into the film, thus increasing the coating hardness, but its brittleness too. Simultaneously, abrasion phenomena are activated, which may lead to roughness augmentation, film thickness decrease and substrate revelation. In this way, for a successful process conduct, it is pivotal to adapt, among others, the applied micro-blasting pressure to the employed medium, air or water. The paper deals with the optimization of wet or dry micro-blasting pressure by various Al2O3 grain sizes for improving the coated tool’s wear resistance. The wear behaviour of coated and variously dry or wet micro-blasted tools was investigated in milling. Considering the grains’ penetration kinematics into the coated tool surface and the film deformation mechanisms during dry or wet microblasting by fine or coarse sharp–edged Al2O3 grains, optimum process pressures can be determined.

  13. Epitaxial Al2O3 capacitors for low microwave loss superconducting quantum circuits

    Directory of Open Access Journals (Sweden)

    K.-H. Cho

    2013-10-01

    Full Text Available We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001 Al2O3 substrates. The superconductor-insulator-superconductor trilayers were grown in situ in a hybrid deposition system: the epitaxial Re base and polycrystalline Al counterelectrode layers were grown by sputtering, while the epitaxial Al2O3 layer was grown by pulsed laser deposition. Structural analysis indicates a highly crystalline epitaxial Al2O3 layer and sharp interfaces. The measured intrinsic (low-power, low-temperature quality factor of the resonators is as high as 3 × 104. These results indicate that low-loss grown Al2O3 is an attractive candidate dielectric for high-fidelity superconducting qubit circuits.

  14. Spatial atomic layer deposition on flexible porous substrates: ZnO on anodic aluminum oxide films and Al2O3 on Li ion battery electrodes

    International Nuclear Information System (INIS)

    Sharma, Kashish; Routkevitch, Dmitri; Varaksa, Natalia; George, Steven M.

    2016-01-01

    Spatial atomic layer deposition (S-ALD) was examined on flexible porous substrates utilizing a rotating cylinder reactor to perform the S-ALD. S-ALD was first explored on flexible polyethylene terephthalate polymer substrates to obtain S-ALD growth rates on flat surfaces. ZnO ALD with diethylzinc and ozone as the reactants at 50 °C was the model S-ALD system. ZnO S-ALD was then performed on nanoporous flexible anodic aluminum oxide (AAO) films. ZnO S-ALD in porous substrates depends on the pore diameter, pore aspect ratio, and reactant exposure time that define the gas transport. To evaluate these parameters, the Zn coverage profiles in the pores of the AAO films were measured using energy dispersive spectroscopy (EDS). EDS measurements were conducted for different reaction conditions and AAO pore geometries. Substrate speeds and reactant pulse durations were defined by rotating cylinder rates of 10, 100, and 200 revolutions per minute (RPM). AAO pore diameters of 10, 25, 50, and 100 nm were utilized with a pore length of 25 μm. Uniform Zn coverage profiles were obtained at 10 RPM and pore diameters of 100 nm. The Zn coverage was less uniform at higher RPM values and smaller pore diameters. These results indicate that S-ALD into porous substrates is feasible under certain reaction conditions. S-ALD was then performed on porous Li ion battery electrodes to test S-ALD on a technologically important porous substrate. Li 0.20 Mn 0.54 Ni 0.13 Co 0.13 O 2 electrodes on flexible metal foil were coated with Al 2 O 3 using 2–5 Al 2 O 3 ALD cycles. The Al 2 O 3 ALD was performed in the S-ALD reactor at a rotating cylinder rate of 10 RPM using trimethylaluminum and ozone as the reactants at 50 °C. The capacity of the electrodes was then tested versus number of charge–discharge cycles. These measurements revealed that the Al 2 O 3 S-ALD coating on the electrodes enhanced the capacity stability. This S-ALD process could be extended to roll-to-roll operation for

  15. Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

    International Nuclear Information System (INIS)

    Wu, Bin; Zhang, Yuantao; Shi, Zhifeng; Li, Xiang; Cui, Xijun; Zhuang, Shiwei; Zhang, Baolin; Du, Guotong

    2014-01-01

    Epitaxial ZnO structures with inherent two layers of nanorods layer on film layer were fabricated on c-Al 2 O 3 by metal-organic chemical vapor deposition (MOCVD) and studied by photoluminescence. Specially, photoluminescence spectra for the film layer were obtained by rendering the excitation from the substrate side. Different defect levels configurations between nanorods and film were revealed. Zinc vacancies tend to form in top nanorods layer, whereas abundant zinc–oxygen divacancies accumulate in bottom film layer. An acceptor state with activation energy of ∼200 meV is exclusive to the film layer. The stacking fault related acceptor and Al introduced donor are present in both layers. Besides, two other defect related donors contained in the nanorods layer perhaps also exist within the film layer. - Highlights: • Inherent double layer ZnO of nanorods on film layer were studied by PL. • V Zn tend to form in the nanorods layer, and V ZnO accumulate in the film layer. • An acceptor with activation energy of ∼200 meV is exclusive to the film layer. • Pure NBE emission without DLE in RT PL spectrum does not mean good crystallinity

  16. A convective study of Al2O3-H2O and Cu- H2O nano-liquid films sprayed over a stretching cylinder with viscous dissipation

    Science.gov (United States)

    Alshomrani, Ali Saleh; Gul, Taza

    2017-11-01

    This study is related with the analysis of spray distribution considering a nanofluid thin layer over the slippery and stretching surface of a cylinder with thermal radiation. The distribution of the spray rate is designated as a function of the nanolayer thickness. The applied temperature used during spray phenomenon has been assumed as a reference temperature with the addition of the viscous dissipation term. The diverse behavior of the thermal radiation with magnetic and chemical reaction has been cautiously observed, which has consequences in causing variations in the spray distribution and heat transmission. Nanofluids have been used as water-based like Al2O3-H2O, Cu- H2O and have been examined under the consideration of momentum and thermal slip boundary conditions. The basic equations have been transformed into a set of nonlinear equations by using suitable variables for alteration. The approximate results of the problem have been achieved by using the optimal approach of the Homotopy Analysis Method (HAM). We demonstrate our results with the help of the numerical (ND-Solve) method. In addition, we found a close agreement of the two methods which is confirmed through graphs and tables. The rate of the spray pattern under the applied pressure term has also been obtained. The maximum cooling performance has been obtained by using the Cu water with the small values of the magnetic parameter and alumina for large values of the magnetic parameter. The outcomes of the Cu-water and Al2O3-H2O nanofluids have been linked to the published results in the literature. The impact of the physical parameters, like the skin friction coefficient, and the local Nusselt number have also been observed and compared with the published work. The momentum slip and thermal slip parameters, thermal radiation parameter, magnetic parameter and heat generation/absorption parameter effects on the spray rate have been calculated and discussed.

  17. Characterization of Al2O3 surface passivation of silicon solar cells

    International Nuclear Information System (INIS)

    Albadri, Abdulrahman M.

    2014-01-01

    A study of the passivation of silicon surface by aluminum oxide (Al 2 O 3 ) is reported. A correlation of fixed oxide charge density (Q f ) and interface trap density (D it ) on passivation efficiency is presented. Low surface recombination velocity (SRV) was obtained even by as-deposited Al 2 O 3 films and this was found to be associated to the passivation of interface states. Fourier transfer infrared spectroscopy spectra show the existence of an interfacial silicon oxide thin layer in both as-deposited and annealed Al 2 O 3 films. Q f is found positive in as-deposited films and changing to negative upon subsequent annealing, providing thus an enhancement of the passivation in p-type silicon wafers, associated to field effects. Secondary ion mass spectrometry analysis confirms the correlation between D it and hydrogen concentration at the Al 2 O 3 /Si interface. A lowest SRV of 15 cm/s was obtained after an anneal at 400 °C in nitrogen atmosphere. - Highlights: • Al 2 O 3 provides superior passivation for silicon surfaces. • Atomic layer deposition-Al 2 O 3 was deposited at a low temperature of 200 °C. • A lowest surface passivation velocity of 15 cm/s was obtained after an anneal at 400 °C in nitrogen. • As-deposited Al 2 O 3 films form very thin SiO 2 layer responsible of low interface trap densities. • High negative fixed charge density of (− 2 × 10 12 cm −2 ) was achieved upon annealing at 400 °C

  18. Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation

    Science.gov (United States)

    Asif, Muhammad; Chen, Chen; Peng, Ding; Xi, Wang; Zhi, Jin

    2018-04-01

    Owing to the great influence of surface passivation on DC and RF performance of InP-based HEMTs, the DC and RF performance of InAlAs/InGaAs InP HEMTs were studied before and after passivation, using an ultra-thin 15 nm atomic layer deposition Al2O3 layer. Increase in Cgs and Cgd was significantly limited by scaling the thickness of the Al2O3 layer. For verification, an analytical small-signal equivalent circuit model was developed. A significant increase in maximum transconductance (gm) up to 1150 mS/mm, drain current (IDS) up to 820 mA/mm and fmax up to 369.7 GHz was observed, after passivation. Good agreement was obtained between the measured and the simulated results. This shows that the RF performance of InP-based HEMTs can be improved by using an ultra-thin ALD-Al2O3 surface passivation.

  19. Textured PbTiO3, Pb(Ca)TiO3-Al2O3 composite films prepared by chemical solution deposition method

    Czech Academy of Sciences Publication Activity Database

    Buršík, Josef; Kužel, R.; Marek, J.; Drbohlav, Ivo

    2003-01-01

    Roč. 26, 1-3 (2003), s. 727-733 ISSN 0928-0707 R&D Projects: GA MŠk LN00A028 Institutional research plan: CEZ:AV0Z4032918 Keywords : thin films * texture * chemical solution deposition Subject RIV: CA - Inorganic Chemistry Impact factor: 1.546, year: 2003

  20. Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface

    Science.gov (United States)

    Kotipalli, R.; Vermang, B.; Joel, J.; Rajkumar, R.; Edoff, M.; Flandre, D.

    2015-10-01

    Atomic layer deposited (ALD) Al2O3 films on Cu(In,Ga)Se2 (CIGS) surfaces have been demonstrated to exhibit excellent surface passivation properties, which is advantageous in reducing recombination losses at the rear metal contact of CIGS thin-film solar cells. Here, we report, for the first time, experimentally extracted electronic parameters, i.e. fixed charge density (Qf) and interface-trap charge density (Dit), for as-deposited (AD) and post-deposition annealed (PDA) ALD Al2O3 films on CIGS surfaces using capacitance-voltage (C-V) and conductance-frequency (G-f) measurements. These results indicate that the AD films exhibit positive fixed charges Qf (approximately 1012 cm-2), whereas the PDA films exhibit a very high density of negative fixed charges Qf (approximately 1013 cm-2). The extracted Dit values, which reflect the extent of chemical passivation, were found to be in a similar range of order (approximately 1012 cm-2 eV-1) for both AD and PDA samples. The high density of negative Qf in the bulk of the PDA Al2O3 film exerts a strong Coulomb repulsive force on the underlying CIGS minority carriers (ns), preventing them to recombine at the CIGS/Al2O3 interface. Using experimentally extracted Qf and Dit values, SCAPS simulation results showed that the surface concentration of minority carriers (ns) in the PDA films was approximately eight-orders of magnitude lower than in the AD films. The electrical characterization and estimations presented in this letter construct a comprehensive picture of the interfacial physics involved at the Al2O3/CIGS interface.

  1. Investigating the electronic properties of Al2O3/Cu(In,GaSe2 interface

    Directory of Open Access Journals (Sweden)

    R. Kotipalli

    2015-10-01

    Full Text Available Atomic layer deposited (ALD Al2O3 films on Cu(In,GaSe2 (CIGS surfaces have been demonstrated to exhibit excellent surface passivation properties, which is advantageous in reducing recombination losses at the rear metal contact of CIGS thin-film solar cells. Here, we report, for the first time, experimentally extracted electronic parameters, i.e. fixed charge density (Qf and interface-trap charge density (Dit, for as-deposited (AD and post-deposition annealed (PDA ALD Al2O3 films on CIGS surfaces using capacitance–voltage (C-V and conductance-frequency (G-f measurements. These results indicate that the AD films exhibit positive fixed charges Qf (approximately 1012 cm−2, whereas the PDA films exhibit a very high density of negative fixed charges Qf (approximately 1013 cm−2. The extracted Dit values, which reflect the extent of chemical passivation, were found to be in a similar range of order (approximately 1012 cm−2 eV−1 for both AD and PDA samples. The high density of negative Qf in the bulk of the PDA Al2O3 film exerts a strong Coulomb repulsive force on the underlying CIGS minority carriers (ns, preventing them to recombine at the CIGS/Al2O3 interface. Using experimentally extracted Qf and Dit values, SCAPS simulation results showed that the surface concentration of minority carriers (ns in the PDA films was approximately eight-orders of magnitude lower than in the AD films. The electrical characterization and estimations presented in this letter construct a comprehensive picture of the interfacial physics involved at the Al2O3/CIGS interface.

  2. TEM and AFM study of WO3 nanosize growth on α-Al2O3

    International Nuclear Information System (INIS)

    Al-Mohammad, A.

    2007-07-01

    WO 3 thin films have been deposited by thermal evaporation on (0001) and (1012 ) planes of alumina oxide single crystal and annealed either in Oxygen or in air atmosphere. The morphology and crystallographic structure of films (as-deposited and annealed films) have been characterized by Atomic Force Microscope (AFM), transmission electron microscope (TEM), and transmission electron diffraction (TED). During annealing, the films undergo important morphological and structural changes. The annealed films exhibit large grains. These grains have the monoclinic structure in epitaxial orientations. The grains are made of twinned microdomains elongated in the [100] direction resulting of a preferential growth. The microdomains are along the three different directions on the (0001) α-Al 2 O 3 surface and only one direction on the (1012 ) α-Al 2 O 3 one.(author)

  3. A near ambient pressure XPS study of subnanometer silver clusters on Al2O3 and TiO2 ultrathin film supports.

    Science.gov (United States)

    Mao, Bao-Hua; Chang, Rui; Shi, Lei; Zhuo, Qi-Qi; Rani, Sana; Liu, Xiao-Song; Tyo, Eric C; Vajda, Stefan; Wang, Sui-Dong; Liu, Zhi

    2014-12-28

    We have investigated model systems of silver clusters with different sizes (3 and 15 atoms) deposited on alumina and titania supports using ambient pressure X-ray photoelectron spectroscopy. The electronic structures of silver clusters and support materials are studied upon exposure to various atmospheres (ultrahigh vacuum, O2 and CO) at different temperatures. Compared to bulk silver, the binding energies of silver clusters are about 0.55 eV higher on TiO2 and 0.95 eV higher on Al2O3 due to the final state effect and the interaction with supports. No clear size effect of the silver XPS peak is observed on different silver clusters among these samples. Silver clusters on titania show better stability against sintering. Al 2p and Ti 2p core level peak positions of the alumina and titania support surfaces change upon exposure to oxygen while the Ag 3d core level position remains unchanged. We discuss the origin of these core level shifts and their implications for catalytic properties of Ag clusters.

  4. Crystal structure and magnetism in κ-Al2O3-type AlxFe2-xO3 films on SrTiO3(111)

    Science.gov (United States)

    Hamasaki, Yosuke; Shimizu, Takao; Yasui, Shintaro; Shiraishi, Takahisa; Akama, Akihiro; Kiguchi, Takanori; Taniyama, Tomoyasu; Itoh, Mitsuru

    2017-07-01

    We prepared κ-Al2O3-type structured AlxFe2-xO3 films in the range of x = 0 - 1.70 deposited on SrTiO3(111) substrates and investigated their crystal structures and magnetic properties. All films could be stabilized in the κ-Al2O3-type orthorhombic phase, and the lattice parameters were found to be monotonically decreased with an increase in the Al content. Néel temperature of AlxFe2-xO3 films was found to decrease with an increase in Al content, until the Al1.70Fe0.30O3 film showed paramagnetic behavior. On the other hand, saturation magnetization showed a maximum 0.79 μB/Fe at 10 K in the Al0.91Fe1.09O3 film, manifesting the preferential occupation of Al in the tetrahedral site. Cross sectional TEM observation has revealed the columnar growth of AlxFe2-xO3 films with an average width of ˜10 nm on the bottom layer that may have a similar cation arrangement with a bixbyite-type structure.

  5. Effect of Y2O3-Al2O3 ratio on inter-granular phases and films in tape-casting α-SiC with high toughness

    International Nuclear Information System (INIS)

    Huang Rong; Gu Hui; Zhang Jingxian; Jiang Dongliang

    2005-01-01

    Silicon carbide (SiC) ceramics prepared from liquid phase sintering after aqueous-tape-casting can yield high toughness when appropriate amount of Y 2 O 3 -Al 2 O 3 are added, even though no elongated grains are present. Grain boundaries (GB), second-phases and hetero-phase boundaries (HB) in 2 samples with additive mole ratios of 3:5 and 3:7 are investigated using high-resolution and analytical electron microscopy (HREM and AEM). The meta-stable YAlO 3 (YAP) was nucleated from SiC surfaces in the sample with Y/Al = 3:5 as revealed by crystallographic relations across the HB, whilst relatively thick amorphous films were found at GB. In contrary, the higher level of Al 2 O 3 additives decreases the GB film thickness in the sample with Y/Al = 3:7, and the homogeneous nucleation of Y 3 Al 5 O 12 (YAG) occurs at triple pockets accompanying with thick HB films. The strong variation of GB widths is a result of GB wetting in the sample with Y/Al = 3:5 and HB wetting in the sample of Y/Al = 3:7, both by liquid Al 2 O 3 . The energy of GB in the former sample is higher than the energy of HB as exhibited by the preferential nucleation of meta-stable YAP on SiC surfaces, which results in wetting of GB by the liquid; the situation is opposite in the latter sample as the wetting of HB occurs, leading to de-wetting of GB. The thermal mismatch between SiC and YAP or YAG as well as the presence of amorphous films facilitate the creation of micro-crack to promote inter-granular fracture and result in high toughness in both SiC ceramics

  6. Determination of the band gap of TiO2-Al2O3 films as a function of processing parameters

    International Nuclear Information System (INIS)

    Barajas-Ledesma, E.; Garcia-Benjume, M.L.; Espitia-Cabrera, I.; Ortiz-Gutierrez, M.; Espinoza-Beltran, F.J.; Mostaghimi, J.; Contreras-Garcia, M.E.

    2010-01-01

    In this work the study of band gap is based on the processing parameters and was calculated using the Indirect Transition Model. An experimental design was done, in order to have a sequence of 18 samples to analyze. The alumina doped titania thin films were prepared by combining electrophoretic deposition (EPD) with sputtering. The addition of alumina to the titania was with the purpose to reduce the band gap of the semiconductor. Several researches have tried to dope titania with other materials, because it has photocatalytic activity only in the UV spectrum. Then, reducing the band gap of the titania, it will have activity in the entire visible spectrum, and its applications increase considerably. Comparing with the adsorption line in the ultraviolet region for all the samples, the results show the adsorption edge for samples doped with fewer amounts of alumina shifts a little toward a lower energy region, leading to a band gap reduction.

  7. Experiment and prediction on thermal conductivity of Al2O3/ZnO ...

    Indian Academy of Sciences (India)

    We predict that there is a critical value of Al2O3/ZnO nano thin interface thickness based on two assumptions according to an interesting phenomenon, which the thermal conductivity (TC) trend of Al2O3/ZnO nano thin interface is consistent with that of relevant single nano thin interface when the nano thin interface thickness ...

  8. Experiment and prediction on thermal conductivity of Al2O3/ZnO ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. We predict that there is a critical value of Al2O3/ZnO nano thin interface thickness based on two assumptions according to an interesting phenomenon, which the thermal conductivity (TC) trend of. Al2O3/ZnO nano thin interface is consistent with that of relevant single nano thin interface when the nano thin interface ...

  9. Experiment and prediction on thermal conductivity of Al 2 O 3 /ZnO ...

    Indian Academy of Sciences (India)

    We predict that there is a critical value of Al2O3/ZnO nano thin interface thickness based on two assumptions according to an interesting phenomenon, which the thermal conductivity (TC) trend of Al2O3/ZnO nano thin interface is consistent with that of relevant single nano thin interface when the nano thin interface thickness ...

  10. Trifluoroacetate metal organic deposition derived (Y0.77Gd0.23)Ba2Cu3O y films on CeO2 buffered R-plane Al2O3 substrates

    Science.gov (United States)

    Sakuma, Keita; Sato, Michio; Miura, Masashi

    2018-03-01

    (Y0.77Gd0.23)Ba2Cu3O y [(Y,Gd)BCO] films were grown on CeO2 buffered R-plane sapphire (R-Al2O3) substrates using trifluoroacetate metal organic deposition (TFA-MOD). Annealing of the CeO2 buffered R-Al2O3 substrates was performed to control the crystallinity and surface morphology of the CeO2 buffer layer. The annealing treatment led to a significant improvement in the crystallinity and surface morphology of the CeO2 buffer layer. A (Y,Gd)BCO film grown on the CeO2 buffer layer with high crystallinity and an atomically flat surface exhibited high self-field (at 77 K) and in-field (at 20 K, 9 T, μ0 H∥c) critical current densities (J c). Annealing of the CeO2 buffer layer thus enabled enhancement of not only the self-field J c for the (Y,Gd)BCO film but also the in-field J c.

  11. MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application

    Science.gov (United States)

    Jiahui, Zhou; Hudong, Chang; Honggang, Liu; Guiming, Liu; Wenjun, Xu; Qi, Li; Simin, Li; Zhiyi, He; Haiou, Li

    2015-05-01

    The impact of various thicknesses of Al2O3 metal—insulator—metal (MIM) capacitors on direct current and radio frequency (RF) characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-α of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications. Project supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031), the Guangxi Natural Science Foundation (No. 2013GXNSFGA019003), the Guangxi Department of Education Project (No. 201202ZD041), the Guilin City Technology Bureau (Nos. 20120104-8, 20130107-4), the China Postdoctoral Science Foundation Funded Project (Nos. 2012M521127, 2013T60566), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449), the State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No. KFJJ201205), and the Guilin City Science and Technology Development Project (Nos. 20130107-4, 20120104-8).

  12. Fabrication of Densely Packed AlN Nanowires by a Chemical Conversion of Al2O3Nanowires Based on Porous Anodic Alumina Film

    Directory of Open Access Journals (Sweden)

    Wang Da-Jian

    2009-01-01

    Full Text Available Abstract Porous alumina film on aluminum with gel-like pore wall was prepared by a two-step anodization of aluminum, and the corresponding gel-like porous film was etched in diluted NaOH solution to produce alumina nanowires in the form of densely packed alignment. The resultant alumina nanowires were reacted with NH3and evaporated aluminum at an elevated temperature to be converted into densely packed aluminum nitride (AlN nanowires. The AlN nanowires have a diameter of 15–20 nm larger than that of the alumina nanowires due to the supplement of the additional evaporated aluminum. The results suggest that it might be possible to prepare other aluminum compound nanowires through similar process.

  13. Model Research On Synthesis Of Al2O3-C Layers By MOCVD

    Directory of Open Access Journals (Sweden)

    Sawka A.

    2015-06-01

    Full Text Available These are model studies whose aim is to obtain information that would allow development of new technology for synthesizing monolayers of Al2O3-C with adjusted microstructure on cemented carbides. The Al2O3-C layer will constitute an intermediate layer on which the outer layer of Al2O3 without carbon is synthesized. The purpose of the intermediate layer is to block the cobalt diffusion to the synthesized outer layer of Al2O3 and to stop the diffusion of air oxygen to the substrate during the synthesis of the outer layer. This layer should be thin, continuous, dense and uniform in thickness.

  14. Frictional properties of CeO$_{2}$-Al$_{2}$O$_{3}$-ZrO$_{2}$ plasma-sprayed film under mixed and boundary lubricating conditions

    CERN Document Server

    Kita, H; Osumi, K; 10.2109/jcersj.112.615

    2004-01-01

    In order to find a counterpart for reducing the frictional coefficient of Al/sub 2/O/sub 3/-ZrO/sub 2/-CeO/sub 2/ plasma-sprayed film, the sliding properties in mixed and boundary lubricating conditions was investigated. It was found that combination of a CrN- coated cast iron pin and an Al/sub 2/O/sub 3/-ZrO/sub 2/-CeO/sub 2/ plasma sprayed plate provided the lowest frictional coefficient among several combinations chosen from practical materials. The coefficient of friction was much lower than that of the materials combination widely used for piston ring and cylinder liner. It was inferred that the combination of a pin made of hard materials with high density, a smooth surface such as CrN-coated cast iron and a porous plate can reduce the frictional coefficient because less sliding resistance is implemented and porosity retains oil.

  15. Graphene-Al2O3-silicon heterojunction solar cells on flexible silicon substrates

    Science.gov (United States)

    Ahn, Jaehyun; Chou, Harry; Banerjee, Sanjay K.

    2017-04-01

    The quest of obtaining sustainable, clean energy is an ongoing challenge. While silicon-based solar cells have widespread acceptance in practical commercialization, continuous research is important to expand applicability beyond fixed-point generation to other environments while also improving power conversion efficiency (PCE), stability, and cost. In this work, graphene-on-silicon Schottky junction and graphene-insulator-silicon (GIS) solar cells are demonstrated on flexible, thin foils, which utilize the electrical conductivity and optical transparency of graphene as the top transparent contact. Multi-layer graphene was grown by chemical vapor deposition on Cu-Ni foils, followed by p-type doping with Au nanoparticles and encapsulated in poly(methyl methacrylate), which showed high stability with minimal performance degradation over more than one month under ambient conditions. Bendable silicon film substrates were fabricated by a kerf-less exfoliation process based on spalling, where the silicon film thickness could be controlled from 8 to 35 μm based on the process recipe. This method allows for re-exfoliation from the parent Si wafer and incorporates the process for forming the backside metal contact of the solar cell. GIS cells were made with a thin insulating Al2O3 atomic layer deposited film, where the thin Al2O3 film acts as a tunneling barrier for holes, while simultaneously passivating the silicon surface, increasing the minority carrier lifetime from 2 to 27 μs. By controlling the Al2O3 thickness, an optimized cell with 7.4% power conversion efficiency (PCE) on a 35 μm thick silicon absorber was fabricated.

  16. Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure.

    Science.gov (United States)

    Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Kim, Keum Do; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong

    2016-01-08

    Enhancement of capacitance by negative capacitance (NC) effect in a dielectric/ferroelectric (DE/FE) stacked film is gaining a greater interest. While the previous theory on NC effect was based on the Landau-Ginzburg-Devonshire theory, this work adopted a modified formalism to incorporate the depolarization effect to describe the energy of the general DE/FE system. The model predicted that the SrTiO3/BaTiO3 system will show a capacitance boost effect. It was also predicted that the 5 nm-thick Al2O3/150 nm-thick BaTiO3 system shows the capacitance boost effect with no FE-like hysteresis behavior, which was inconsistent with the experimental results; the amorphous-Al2O3/epitaxial-BaTiO3 system showed a typical FE-like hysteresis loop in the polarization - voltage test. This was due to the involvement of the trapped charges at the DE/FE interface, originating from the very high field across the thin Al2O3 layer when the BaTiO3 layer played a role as the NC layer. Therefore, the NC effect in the Al2O3/BaTiO3 system was frustrated by the involvement of reversible interface charge; the highly stored charge by the NC effect of the BaTiO3 during the charging period could not be retrieved during the discharging process because integral part of the polarization charge was retained within the system as a remanent polarization.

  17. Surface modified Al2O3 in fluorinated polyimide/Al2O3 ...

    Indian Academy of Sciences (India)

    agglomeration. One approach to decrease the aggregation of inorganic Al2O3 is surface modification of these nanoparti- cles with coupling agent which usually has a long alkyl tail and shows a good compatibility with polymer .... ture and spatial distribution of the various components, through direct visualization. Figure 5 ...

  18. High-reflectance 193 nm Al2O3/MgF2 mirrors

    International Nuclear Information System (INIS)

    Shang Shuzhen; Shao Jianda; Liao Chunyan; Yi Kui; Fan Zhengxiu; Chen Lei

    2005-01-01

    Thin-film single layers of Al 2 O 3 and MgF 2 were deposited upon super polished fused-silica by electron-beam evaporation. The subsequent optical constants n and k were reported for the spectral range of 180-230 nm. High-reflectance dense multilayer coatings for 193 nm were designed on the basis of the evaluated optical constants and produced. The spectra of the reflectance of HR coatings were compared to the theoretical calculations. HR mirrors of 27 layers with a reflectance of more than 98% were reported

  19. Rectification and tunneling effects enabled by Al2O3 atomic layer deposited on back contact of CdTe solar cells

    Science.gov (United States)

    Liang, Jun; Lin, Qinxian; Li, Hao; Su, Yantao; Yang, Xiaoyang; Wu, Zhongzhen; Zheng, Jiaxin; Wang, Xinwei; Lin, Yuan; Pan, Feng

    2015-07-01

    Atomic layer deposition (ALD) of Aluminum oxide (Al2O3) is employed to optimize the back contact of thin film CdTe solar cells. Al2O3 layers with a thickness of 0.5 nm to 5 nm are tested, and an improved efficiency, up to 12.1%, is found with the 1 nm Al2O3 deposition, compared with the efficiency of 10.7% without Al2O3 modification. The performance improvement stems from the surface modification that optimizes the rectification and tunneling of back contact. The current-voltage analysis indicates that the back contact with 1 nm Al2O3 maintains large tunneling leakage current and improves the filled factor of CdTe cells through the rectification effect. XPS and capacitance-voltage electrical measurement analysis show that the ALD-Al2O3 modification layer features a desired low-density of interface state of 8 × 1010 cm-2 by estimation.

  20. Tunnel magnetoresistance in Ni 80Fe 20/Al 2O 3/Co/Al 2O 3/Co junctions

    Science.gov (United States)

    Kubota, H.; Watabe, T.; Miyazaki, T.

    1999-06-01

    Tunnel magnetoresistance (TMR) effect has been investigated in Ni 80Fe 20/Al 2O 3/Co/Al 2O 3/Co double tunnel junctions. The Al 2O 3 layer was formed by a direct sputtering method with an Al 2O 3 target. The dependence of the tunnel resistance and the MR ratio on the thickness of Al 2O 3 and that of the central Co layer were investigated. The relation between the structure of the interface and TMR effect was discussed.

  1. Nucleation and growth mechanisms of Al2O3 atomic layer deposition on synthetic polycrystalline MoS2

    Science.gov (United States)

    Zhang, H.; Chiappe, D.; Meersschaut, J.; Conard, T.; Franquet, A.; Nuytten, T.; Mannarino, M.; Radu, I.; Vandervorst, W.; Delabie, A.

    2017-02-01

    Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are of great interest for applications in nano-electronic devices. Their incorporation requires the deposition of nm-thin and continuous high-k dielectric layers on the 2D TMDs. Atomic layer deposition (ALD) of high-k dielectric layers is well established on Si surfaces: the importance of a high nucleation density for rapid layer closure is well known and the nucleation mechanisms have been thoroughly investigated. In contrast, the nucleation of ALD on 2D TMD surfaces is less well understood and a quantitative analysis of the deposition process is lacking. Therefore, in this work, we investigate the growth of Al2O3 (using Al(CH3)3/H2O ALD) on MoS2 whereby we attempt to provide a complete insight into the use of several complementary characterization techniques, including X-ray photo-electron spectroscopy, elastic recoil detection analysis, scanning electron microscopy, and time-of-flight secondary ion mass spectrometry. To reveal the inherent reactivity of MoS2, we exclude the impact of surface contamination from a transfer process by direct Al2O3 deposition on synthetic MoS2 layers obtained by a high temperature sulfurization process. It is shown that Al2O3 ALD on the MoS2 surface is strongly inhibited at temperatures between 125°C and 300°C, with no growth occurring on MoS2 crystal basal planes and selective nucleation only at line defects or grain boundaries at MoS2 top surface. During further deposition, the as-formed Al2O3 nano-ribbons grow in both vertical and lateral directions. Eventually, a continuous Al2O3 film is obtained by lateral growth over the MoS2 crystal basal plane, with the point of layer closure determined by the grain size at the MoS2 top surface and the lateral growth rate. The created Al2O3/MoS2 interface consists mainly of van der Waals interactions. The nucleation is improved by contributions of reversible adsorption on the MoS2 basal planes by using low

  2. Highly-Ordered Magnetic Nanostructures on Self-Assembled α-Al2O3 and Diblock Copolymer Templates

    International Nuclear Information System (INIS)

    Erb, Denise

    2015-08-01

    This thesis shows the preparation of nanostructured systems with a high degree of morphological uniformity and regularity employing exclusively selfassembly processes, and documents the investigation of these systems by means of atomic force microscopy (AFM), grazing incidence small angle X-ray scattering (GISAXS), and nuclear resonant scattering of synchrotron radiation (NRS). Whenever possible, the X-ray scattering methods are applied in-situ and simultaneously in order to monitor and correlate the evolution of structural and magnetic properties of the nanostructured systems. The following systems are discussed, where highly-ordered magnetic nanostructures are grown on α-Al 2 O 3 substrates with topographical surface patterning and on diblock copolymer templates with chemical surface patterning: - Nanofaceted surfaces of α-Al 2 O 3 - Magnetic nanostructures on nanofaceted α-Al 2 O 3 substrates - Thin films of microphase separated diblock copolymers - Magnetic nanostructures on diblock copolymer thin film templates The fact that the underlying self-assembly processes can be steered by external factors is utilized to optimize the degree of structural order in the nanostructured systems. The highly-ordered systems are well-suited for investigations with X-ray scattering methods, since due to their uniformity the inherently averaged scattered signal of a sample yields meaningful information on the properties of the contained nanostructures: By means of an in-situ GISAXS experiment at temperatures above 1000 C, details on the facet formation on α-Al 2 O 3 surfaces are determined. A novel method, merging in-situ GISAXS and NRS, shows the evolution of magnetic states in a system with correlated structural and magnetic inhomogeneity with lateral resolution. The temperature-dependence of the shape of Fe nanodots growing on diblock copolymer templates is revealed by in-situ GISAXS during sputter deposition of Fe. Combining in-situ GISAXS and NRS, the magnetization

  3. Efficient photoelectrochemical water splitting using CuO nanorod/Al2O3 heterostructure photoelectrodes with different Al layer thicknesses

    Science.gov (United States)

    Ha, Jin-wook; Ryu, Hyukhyun; Lee, Won-Jae; Bae, Jong-Seong

    2017-08-01

    In this study, an efficient water splitting technique was investigated with CuO nanorod/Al2O3 heterostructure photoelectrodes. Cupric oxide (CuO) nanorods were grown on a fluorine-doped tin oxide (FTO) glass substrate by using modified-chemical bath deposition. In addition, Al thin films were deposited on the CuO nanorods using thermal evaporation, and then, aluminum oxide (Al2O3) layers were formed in open air to create the CuO nanorod/Al2O3 structure. In this study, the morphological, optical and structural properties of CuO nanorod/Al2O3 photoelectrodes were analyzed according to the various thicknesses of the Al layers, and the effects of the thickness on the photoelectrochemical (PEC) properties were mainly discussed. We obtained a maximum photocurrent value of -2.26 mA/cm2 (-0.55 V vs. SCE) and a theoretical solar-to-hydrogen (STH) conversion efficiency of 1.61% using the Al 30-nm thick sample, which had the largest amount of the Al2O3 layer, as confirmed by X-ray photoelectron spectroscopy (XPS).

  4. Al2O3 on WSe2 by ozone based atomic layer deposition: Nucleation and interface study

    Science.gov (United States)

    Azcatl, Angelica; Wang, Qingxiao; Kim, Moon J.; Wallace, Robert M.

    2017-08-01

    In this work, the atomic layer deposition process using ozone and trimethylaluminum (TMA) for the deposition of Al2O3 films on WSe2 was investigated. It was found that the ozone-based atomic layer deposition enhanced the nucleation of Al2O3 in comparison to the water/TMA process. In addition, the chemistry at the Al2O3/WSe2 interface and the surface morphology of the Al2O3 films exhibited a dependence on the deposition temperature. A non-covalent functionalizing effect of ozone on WSe2 at low deposition temperatures 30 °C was identified which prevented the formation of pinholes in the Al2O3 films. These findings aim to provide an approach to obtain high-quality gate dielectrics on WSe2 for two-dimensional transistor applications.

  5. The effect of thermal annealing on the adherence of Al2O3-films deposited by low-pressure, metal-organic, chemical-vapor deposition on AISI 304

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Haanappel, V.A.C.; van de Vendel, D.; van Corbach, H.D.; Fransen, T.; Gellings, P.J.

    1995-01-01

    Thin alumina films, deposited at 280°C by low-pressure, metal-organic, chemical-vapor deposition on stainless steel, type AISI 304, were annealed at 0.17 kPa in a nitrogen atmosphere for 2,4, and 17 hr at 600, 700, and 800°C. The effect of the annealing process on the adhesion of the thin alumina

  6. Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al2O3

    Science.gov (United States)

    Erkan, Mehmet Eray; Chawla, Vardaan; Scarpulla, Michael A.

    2016-05-01

    The greatest challenge for improving the power conversion efficiency of Cu2ZnSn(S,Se)4 (CZTSSe)/CdS/ZnO thin film solar cells is increasing the open circuit voltage (VOC). Probable leading causes of the VOC deficit in state-of-the-art CZTSSe devices have been identified as bulk recombination, band tails, and the intertwined effects of CZTSSe/CdS band offset, interface defects, and interface recombination. In this work, we demonstrate the modification of the CZTSSe absorber/CdS buffer interface following the deposition of 1 nm-thick Al2O3 layers by atomic layer deposition (ALD) near room temperature. Capacitance-voltage profiling and quantum efficiency measurements reveal that ALD-Al2O3 interface modification reduces the density of acceptor-like states at the heterojunction resulting in reduced interface recombination and wider depletion width. Indications of increased VOC resulting from the modification of the heterojunction interface as a result of ALD-Al2O3 treatment are presented. These results, while not conclusive for application to state-of-the-art high efficiency CZTSSe devices, suggest the need for further studies as it is probable that interface recombination contributes to reduced VOC even in such devices.

  7. Formation and surface characterization of nanostructured Al2O3 ...

    Indian Academy of Sciences (India)

    Administrator

    Page 1. Electronic Supplementary Material. Graphical abstract. Formation and surface characterization of nanostructured Al2O3–TiO2 coatings by Vairamuthu Raj and Mohamed Sirajudeen Mumjitha. (pp 1411–1418).

  8. UV-protection properties of electrospun polyacrylonitrile nanofibrous mats embedded with MgO and Al2O3 nanoparticles

    International Nuclear Information System (INIS)

    Dadvar, Saeed; Tavanai, Hossein; Morshed, Mohammad

    2011-01-01

    This article describes the ultraviolet (UV) protection of MgO and Al 2 O 3 nanoparticles embedded electrospun polyacrylonitrile (PAN) nanofibrous mats. UV radiation is a harmful part of sunlight and prolonged exposure to it can cause serious skin damages. In this research, nanofibrous mats consisting of nanofibers with different diameters containing different amounts of MgO, Al 2 O 3 , MgO Plus, and Al 2 O 3 Plus nanoparticles were produced, and their UV-protection was measured. The specific surface area of MgO, MgO Plus, Al 2 O 3 , and Al 2 O 3 Plus nanoparticles was 230, 600, 275, and 550 m 2 /g, respectively. The mean diameter of electrospun PAN nanofibers embedded with metal oxide nanoparticles was in the range of 665–337 nm. The results showed that the UV-protection (shielding) capability of the mats strongly depends on fiber diameter; in fact a thin mat of nanofibers has a much stronger UV-protection in comparison to a thicker mat composed of regular fibers. UV transmission is reduced as a result of embedding MgO and Al 2 O 3 nanoparticles in the electrospun PAN nanofibrous mats. MgO Plus and Al 2 O 3 Plus show higher UV-protection than MgO and Al 2 O 3 .

  9. Data of ALD Al2O3 rear surface passivation, Al2O3 PERC cell performance, and cell efficiency loss mechanisms of Al2O3 PERC cell

    Directory of Open Access Journals (Sweden)

    Haibing Huang

    2017-04-01

    Full Text Available This data article is related to the recently published article ‘20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%’ (Huang et al., 2017 [1]. This paper is about passivated emitter and rear cell (PERC structures and it describes the quality of the Al2O3 rear-surface passivation layer deposited by atomic layer deposition (ALD, in relation to the processing parameters (e.g. pre-clean treatment, deposition temperature, growth per cycle, and film thickness and to the cell efficiency loss mechanisms. This dataset is made public in order to contribute to the limited available public data on industrial PERC cells, to be used by other researchers.

  10. Data of ALD Al2O3rear surface passivation, Al2O3PERC cell performance, and cell efficiency loss mechanisms of Al2O3PERC cell.

    Science.gov (United States)

    Huang, Haibing; Lv, Jun; Bao, Yameng; Xuan, Rongwei; Sun, Shenghua; Sneck, Sami; Li, Shuo; Modanese, Chiara; Savin, Hele; Wang, Aihua; Zhao, Jianhua

    2017-04-01

    This data article is related to the recently published article '20.8% industrial PERC solar cell: ALD Al 2 O 3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%' (Huang et al., 2017) [1]. This paper is about passivated emitter and rear cell (PERC) structures and it describes the quality of the Al 2 O 3 rear-surface passivation layer deposited by atomic layer deposition (ALD), in relation to the processing parameters (e.g. pre-clean treatment, deposition temperature, growth per cycle, and film thickness) and to the cell efficiency loss mechanisms. This dataset is made public in order to contribute to the limited available public data on industrial PERC cells, to be used by other researchers.

  11. Mechanochemically synthesized Al2O3-TiC nanocomposite

    International Nuclear Information System (INIS)

    Mohammad Sharifi, E.; Karimzadeh, F.; Enayati, M.H.

    2010-01-01

    Al 2 O 3 -TiC nanocomposite was synthesized by ball milling of aluminum, titanium oxide and graphite powder mixtures. Effect of the milling time and heat treatment temperatures were investigated. The structural evolution of powder particles after different milling times was studied by X-ray diffractometry and scanning electron microscopy. The results showed that after 40 h of ball milling the Al/TiO 2 /C reacted with a self-propagating combustion mode producing Al 2 O 3 -TiC nanocomposite. In final stage of milling, alumina and titanium carbide crystallite sizes were less than 10 nm. After annealing at 900 o C for 1 h, Al 2 O 3 and TiC crystallite sizes remained constant, however increasing annealing temperature to 1200 o C increased Al 2 O 3 and TiC crystallite size to 65 and 30 nm, respectively. No phase change was observed after annealing of the synthesized Al 2 O 3 -TiC powder.

  12. Lifetime of ALD Al2O3 Passivated Black Silicon Nanostructured for Photovoltaic Applications

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym; Davidsen, Rasmus Schmidt; Schmidt, Michael Stenbæk

    .5%. For passivation purposes we used 37 nm ALD Al2O3 films and conducted lifetime measurements and found 1220 µs and to 4170 µs, respectively, for p- and n-type CZ silicon wafers. Such results are promising results to introduce for black silicon RIE nano-structuring in solar cell process flow....

  13. Miscibility of amorphous ZrO2-Al2O3 binary alloy

    Science.gov (United States)

    Zhao, C.; Richard, O.; Bender, H.; Caymax, M.; De Gendt, S.; Heyns, M.; Young, E.; Roebben, G.; Van Der Biest, O.; Haukka, S.

    2002-04-01

    Miscibility is a key factor for maintaining the homogeneity of the amorphous structure in a ZrO2-Al2O3 binary alloy high-k dielectric layer. In the present work, a ZrO2/Al2O3 laminate thin layer has been prepared by atomic layer chemical vapor deposition on a Si (100) wafer. This layer, with artificially induced inhomogeneity (lamination), enables one to study the change in homogeneity of the amorphous phase in the ZrO2/Al2O3 system during annealing. High temperature grazing incidence x-ray diffraction (HT-XRD) was used to investigate the change in intensity of the constructive interference peak of the x-ray beams which are reflected from the interfaces of ZrO2/Al2O3 laminae. The HT-XRD spectra show that the intensity of the peak decreases with an increase in the anneal temperature, and at 800 °C, the peak disappears. The same samples were annealed by a rapid thermal process (RTP) at temperatures between 700 and 1000 °C for 60 s. Room temperature XRD of the RTP annealed samples shows a similar decrease in peak intensity. Transmission electronic microscope images confirm that the laminate structure is destroyed by RTP anneals and, just below the crystallization onset temperature, a homogeneous amorphous ZrAlxOy phase forms. The results demonstrate that the two artificially separated phases, ZrO2 and Al2O3 laminae, tend to mix into a homogeneous amorphous phase before crystallization. This observation indicates that the thermal stability of ZrO2-Al2O3 amorphous phase is suitable for high-k applications.

  14. Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization

    Science.gov (United States)

    2017-01-01

    A novel method to form ultrathin, uniform Al2O3 layers on graphene using reversible hydrogen plasma functionalization followed by atomic layer deposition (ALD) is presented. ALD on pristine graphene is known to be a challenge due to the absence of dangling bonds, leading to nonuniform film coverage. We show that hydrogen plasma functionalization of graphene leads to uniform ALD of closed Al2O3 films down to 8 nm in thickness. Hall measurements and Raman spectroscopy reveal that the hydrogen plasma functionalization is reversible upon Al2O3 ALD and subsequent annealing at 400 °C and in this way does not deteriorate the graphene’s charge carrier mobility. This is in contrast with oxygen plasma functionalization, which can lead to a uniform 5 nm thick closed film, but which is not reversible and leads to a reduction of the charge carrier mobility. Density functional theory (DFT) calculations attribute the uniform growth on both H2 and O2 plasma functionalized graphene to the enhanced adsorption of trimethylaluminum (TMA) on these surfaces. A DFT analysis of the possible reaction pathways for TMA precursor adsorption on hydrogenated graphene predicts a binding mechanism that cleans off the hydrogen functionalities from the surface, which explains the observed reversibility of the hydrogen plasma functionalization upon Al2O3 ALD. PMID:28405059

  15. Catalytic Methane Decomposition over Fe-Al2O3

    KAUST Repository

    Zhou, Lu

    2016-05-09

    The presence of a Fe-FeAl2O4 structure over an Fe-Al2O3 catalysts is demonstrated to be vital for the catalytic methane decomposition (CMD) activity. After H2 reduction at 750°C, Fe-Al2O3 prepared by means of a fusion method, containing 86.5wt% FeAl2O4 and 13.5wt% Fe0, showed a stable CMD activity at 750°C for as long as 10h. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Leaching of Al2O3 in simulated repository conditions

    International Nuclear Information System (INIS)

    Svensson, B.-M.; Dahl, L.

    1978-06-01

    Al 2 O 3 material has been leached at 90 deg C in: simulated ground water at pH 8.5, embedded in bentonite + silica sand saturated with the same water, and in simulated ground water at pH 6 and pH 10. Leaching periods varied from 30 days to 300 days. We observed slight weight increments in all cases from deposits on samples from the environment. These mask weight losses from Al 2 O 3 that may have occurred. (author)

  17. Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications

    Science.gov (United States)

    Xu, Zhongguang; Huo, Zongliang; Zhu, Chenxin; Cui, Yanxiang; Wang, Ming; Zheng, Zhiwei; Liu, Jing; Wang, Yumei; Li, Fanghua; Liu, Ming

    2011-11-01

    In this paper, we demonstrate a charge trapping memory with aluminum nanocrystals (Al- NCs) embedded in Al2O3 high-k dielectric. Compared to metal/Al2O3/SiO2/Si structure, this device exhibits a larger memory window (6.7 V at ±12 V), faster program/erase speed and good endurance. In particular, data retention is improved greatly both at room temperature and in high-temperature (up to 150 °C). The results indicate that the device with the embedding Al-NCs in Al2O3 film has a strong potential for future high-performance nonvolatile memory application.

  18. Formation and surface characterization of nanostructured Al2O3 ...

    Indian Academy of Sciences (India)

    Administrator

    1411. Formation and surface characterization of nanostructured Al2O3–TiO2 coatings. VAIRAMUTHU RAJ* and MOHAMED SIRAJUDEEN MUMJITHA. Advanced Materials ... of the coatings (thickness, growth rate, coating ratio) showed a linear regime with current density and electro- ..... Electronic Supplementary Material.

  19. Study of Al2O3 nanolayers synthesized onto porous SiO2 using X-ray reflection spectroscopy

    International Nuclear Information System (INIS)

    Konashuk, A.S.; Sokolov, A.A.; Drozd, V.E.; Schaefers, F.; Filatova, E.O.

    2013-01-01

    The structure of alumina (Al 2 O 3 ) films with different thickness grown by the atomic layer deposition method on porous silica substrates has been studied using soft X-ray reflection spectroscopy. It was established that synthesized films were amorphous and the proportion of Al coordination (tetrahedral: octahedral) depends on the film thickness. The film growth starts from excess of tetrahedral (AlO 4 ) coordination and thickening of the film leads to increasing of number of octahedral (AlO 6 ) coordination in the structure. A critical thickness of amorphous Al 2 O 3 film exists (in the range of studied films, this is a thickness of 13 nm). For thicker films, the structure of amorphous Al 2 O 3 film corresponds to massive film with the typical proportion of tetrahedrally and octahedrally coordinated sites in the structure. - Highlights: • Growth of Al 2 O 3 film on porous SiO 2 begins with excess of AlO 4 coordinations. • On the contrary, film growth on nonporous substrates starts with excess of AlO 6 . • When thickness reaches 13 nm, the film achieves structure of massive amorphous Al 2 O 3 . • Substrate material doesn't affect structure for thicknesses more than 13 nm

  20. Use of thin films obtained by electron beam evaporation as optical wave guide

    International Nuclear Information System (INIS)

    Nobre, S.A.A.; Oliveira, C.A.S. de; Freire, G.F.de O.

    1986-01-01

    Thin films evaporated by electron beam for the fabrication of planar optical waveguides were used. The tested materials were aluminium oxide (Al 2 O 3 ) and tantalum pentoxide (Ta 2 O 5 ). The effect of annealing conditions on the film absorption was investigated for Ta 2 O 5 . The Al 2 O 3 films were characterized by the method of guided modes, in terms of refractive index measurements and film thickness. Atenuation measurements were also carried out. (M.C.K.) [pt

  1. Current Tunnelling in MOS Devices with Al2O3/SiO2 Gate Dielectric

    Directory of Open Access Journals (Sweden)

    A. Bouazra

    2008-01-01

    Full Text Available With the continued scaling of the SiO2 thickness below 2 nm in CMOS devices, a large direct-tunnelling current flow between the gate electrode and silicon substrate is greatly impacting device performance. Therefore, higher dielectric constant materials are desirable for reducing the gate leakage while maintaining transistor performance for very thin dielectric layers. Despite its not very high dielectric constant (∼10, Al2O3 has emerged as one of the most promising high-k candidates in terms of its chemical and thermal stability as its high-barrier offset. In this paper, a theoretical study of the physical and electrical properties of Al2O3 gate dielectric is reported including I(V and C(V characteristics. By using a stack of Al2O3/SiO2 with an appropriate equivalent oxide thickness of gate dielectric MOS, the gate leakage exhibits an important decrease. The effect of carrier trap parameters (depth and width at the Al2O3/SiO2 interface is also discussed.

  2. Tribological behavior of Nano-Al2O3 and PEEK reinforced PTFE composites

    Science.gov (United States)

    Wang, Banghan; Lv, Qiujuan; Hou, Genliang

    2017-01-01

    The Nano-Al2O3 and PEEK particles synergetic filled PTFE composites were prepared by mechanical blending-molding-sintering method. The tribological behavior of composites with different volume fraction of fillers was tested on different test conditions by a MMW-1A block-on-ring friction and wear tester. The transfer film on counterpart 5A06 Aluminum alloy ring was inspected and anslyzed with scanning electronic microscopy (SEM) and X-ray diffraction (XRD). The results demonstrated that the lowest friction coefficient was gained when the PTFE composite was filled with only 10% PEEK. The friction coefficient decreases gradually with the increasing content of PEEK. The special wear rate of 10% PEEK/PTFE were decreased clearly with filled different contents of nano-Al2O3 particles. The special wear rate of the sample with 5% nano-Al2O3 and 10% PEEK had the lowest volume wear rate. The sliding speed effect significantly on the tribological behavior of nano-Al2O3/PEEK/PTFE composites.

  3. Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture.

    Science.gov (United States)

    Maikap, Siddheswar; Panja, Rajeswar; Jana, Debanjan

    2014-01-01

    A novel idea by using copper (Cu) pillar is proposed in this study, which can replace the through-silicon-vias (TSV) technique in future three-dimensional (3D) architecture. The Cu pillar formation under external bias in an Al/Cu/Al2O3/TiN structure is simple and low cost. The Cu pillar is formed in the Al2O3 film under a small operation voltage of 70 mA is obtained. More than 100 devices have shown tight distribution of the Cu pillars in Al2O3 film for high current compliance (CC) of 70 mA. Robust read pulse endurances of >10(6) cycles are observed with read voltages of -1, 1, and 4 V. However, read endurance is failed with read voltages of -1.5, -2, and -4 V. By decreasing negative read voltage, the read endurance is getting worst, which is owing to ruptured Cu pillar. Surface roughness and TiO x N y on TiN bottom electrode are observed by atomic force microscope and transmission electron microscope, respectively. The Al/Cu/Al2O3/TiN memory device shows good bipolar resistive switching behavior at a CC of 500 μA under small operating voltage of ±1 V and good data retention characteristics of >10(3) s with acceptable resistance ratio of >10 is also obtained. This suggests that high-current operation will help to form Cu pillar and lower-current operation will have bipolar resistive switching memory. Therefore, this new Cu/Al2O3/TiN structure will be benefited for 3D architecture in the future.

  4. Preparation and characterization of DLC/SiO2/Al2O3 nanofiltration ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 36; Issue 7. Preparation and characterization of DLC/SiO2/Al2O3 nanofiltration membrane. Jin-Su Jeong ... Mixed gas permeability of the membrane with 1 m-thick SiO2 and 2 m-thick DLC thin filmannealed at 200 °C was ∼18 ccm at 1018 mb back pressure.

  5. Hot corrosion performance of LVOF sprayed Al2O3–40% TiO2 ...

    Indian Academy of Sciences (India)

    1. Introduction. Hot corrosion of heat transfer pipes and other structural ... substrate due to the difference in coefficient of thermal expansion ..... Arc evaporation. Na2SO4+ 25%. 900. ◦. C for. 0.1. 32 alloy. ZnO + CaO + Na2O + B2O3 method. K2SO4. 100 h. +TiO2+ other )– 30% Al2O3 composite coating with a thin NiCoCrY ...

  6. Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition.

    Science.gov (United States)

    Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka L; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo-Pekka

    2016-11-04

    The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm(-1), above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m(2) K GW(-1), and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates.

  7. Investigating the nanostructure and thermal properties of chiral poly(amide-imide)/Al2O3 compatibilized with 3-aminopropyltriethoxysilane

    International Nuclear Information System (INIS)

    Mallakpour, Shadpour; Dinari, Mohammad

    2013-01-01

    Graphical abstract: - Highlights: • Chiral polymer with different functional groups was prepared in green route. • The surface of Al 2 O 3 -NPs was treated by KH550 as a silane coupling agent. • NCs of poly(amide-imide) and Al 2 O 3 were synthesized by ultrasonic irradiation. • TEM results show good dispersion of Al 2 O 3 -NPs in the poly(amide-imide) matrix. • The thermal and mechanical properties of the hybrid materials were improved. - Abstract: Novel chiral poly(amide-imide) (PAI)/Al 2 O 3 nanocomposites were prepared via incorporating surface modified Al 2 O 3 nanoparticles into polymer matrices for the first time. In the process of preparing the nanocomposites, severe aggregation of Al 2 O 3 nanoparticles could be reduced by surface modification and γ-aminopropyltriethoxysilane. The optically active PAI chains were formed from the polycondensation reaction of N,N′-(pyromellitoyl)-bis-phenylalanine diacid with 2-(3,5-diaminophenyl)-benzimidazole in green condition. The obtained polymer and inorganic metal oxide nanoparticles were used to prepare chiral PAI/Al 2 O 3 nanocomposites through ultrasonic irradiation. The resulting nanoparticle filled composites were also characterized by Fourier transform infrared spectroscopy, X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and thermogravimetric analysis (TGA) techniques. TGA thermographs confirmed that the heat stability of the prepared nanoparticle-reinforced composites was improved. Mechanical properties showed that the film containing 10 wt% of modified Al 2 O 3 had a tensile strength of the order of 83.6 MPa, relative to the 64.3 MPa of the pure PAI

  8. ??????????? ??????????????? ????? ??????-???????? ????????????? ?????????? ??????? ?aO?Al2O3?TiO2 ??? ???????? ?????? ?????

    OpenAIRE

    ???????, ????; ??????, ?????????

    2011-01-01

    ? ????? ?????? ?????????? ???????? ?????????????? ??????????? ????????????? ??? ??????-????????? ???????????????? ?????????? ??????? ?aO?Al2O3?TiO2, ?? ???????? ??????? ? ???????????? ??????? ??? ???????? ? ?????? ????????? ?????? ?????. ???????? ?????????? ???????? ??? ??????????? ?????????? ??????? ????????? ???????????? ?????????? ??? ??????????? 12000?, ?? ????????? ?????????????? ????????????? ???????, ????????? ???? ? ?????????? ????? ???????? ??????? ???????????. ????????, ?? ?? ...

  9. Nanoscale formation of new solid-state compounds by topochemical effects: The interfacial reactions ZnO with Al2O3 as a model system

    International Nuclear Information System (INIS)

    Pin, Sonia; Ghigna, Paolo; Spinolo, Giorgio; Quartarone, Eliana; Mustarelli, Piercarlo; D'Acapito, Francesco; Migliori, Andrea; Calestani, Gianluca

    2009-01-01

    The chemical reactivity of thin layers (ca. 10 nm thick) of ZnO deposited onto differently oriented Al 2 O 3 single crystals has been investigated by means of atomic force microscopy inspections and X-ray absorption spectroscopy at the Zn-K edge. The (0001) ZnO -parallel (112-bar0) sapphire interface yields the ZnAl 2 O 4 spinel and a quite stable film morphology. Instead, the (112-bar0) ZnO -parallel (11-bar02) sapphire and (0001) ZnO -parallel (0001) sapphire interfaces give origin to a new compound (or, possibly, even two new compounds), whose chemical nature is most likely that of a ZnO/Al 2 O 3 phase, with still unknown composition and crystal structure. In addition, in the last two cases, films collapse into prismatic twins of ca. 1 μm in dimension. These experimental findings demonstrate that in a solid-state reaction, the topotactical relationships between the reacting solids are of crucial importance not only in determining the kinetic and mechanisms of the process in its early stages, but even the chemical nature of the product. - Graphical abstract: EXAFS Fourier transforms and morphology of different reactive interfaces between ZnO and Al 2 O 3 .

  10. Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy.

    Science.gov (United States)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun; Yang, Yuzhen; Yu, Yang; Wen, Kaile

    2017-12-01

    Pure aluminum oxide (Al 2 O 3 ) and zinc aluminum oxide (Zn x Al 1-x O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E g ) of the Zn x Al 1-x O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and alignment of atomic-layer-deposited Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction were investigated in detail using charge-corrected X-ray photoelectron spectroscopy. In this work, different methodologies were adopted to recover the actual position of the core levels in insulator materials which were easily affected by differential charging phenomena. Valence band offset (ΔE V ) and conduction band offset (ΔE C ) for the interface of the Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction have been constructed. An accurate value of ΔE V  = 0.82 ± 0.12 eV was obtained from various combinations of core levels of heterojunction with varied Al 2 O 3 thickness. Given the experimental E g of 6.8 eV for Al 2 O 3 and 5.29 eV for Zn 0.8 Al 0.2 O, a type-I heterojunction with a ΔE C of 0.69 ± 0.12 eV was found. The precise determination of the band alignment of Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction is of particular importance for gaining insight to the design of various electronic devices based on such heterointerface.

  11. Luminescent properties of Al2O3: Tb powders

    International Nuclear Information System (INIS)

    Esparza G, A.E.; Garcia, M.; Falcony, C.; Azorin N, J.

    2000-01-01

    In this work the photo luminescent and cathode luminescent characteristics of aluminium oxide (Al 2 O 3 ) powders impurified with terbium (Tb) were studied for their use in dosimetry. The optical, structural, morphological characteristics of the powders as function of variation in the impurity concentration and the annealing temperature will be presented. As regards the optical properties of powders (photoluminescence and cathode luminescence) it was observed a characteristic emission associated with radiative transitions between electron energy levels of terbium, the spectra associated with this emission consists of several peaks associated with such transitions. In the structural and morphological characterization (X-ray diffraction and scanning electron microscopy) it was appreciated that in accordance the annealing temperature of powders is augmented it is evident the apparition of certain crystalline phases. The results show that this is a promissory material for radiation dosimetry. (Author)

  12. Temperature-programmed reaction of CO2 reduction in the presence of hydrogen over Fe/Al2O3, Re/Al2O3 and Cr-Mn-O/Al2O3 catalysts

    International Nuclear Information System (INIS)

    Mirzabekova, S.R.; Mamedov, A.B.; Krylov, O.V.

    1996-01-01

    Regularities in CO 2 reduction have been studied using the systems Fe/Al 2 O 3 , Re/Al 2 O 3 and Cr-Mn-O/Al 2 O 3 under conditions of thermally programmed reaction by way of example. A sharp increase in the reduction rate in the course of CO 2 interaction with reduced Fe/Al 2 O 3 and Re/Al 2 O 3 , as well as with carbon fragments with addition in CO 2 flow of 1-2%H 2 , has been revealed. The assumption is made on intermediate formation of a formate in the process and on initiating effect of hydrogen on CO 2 reduction by the catalyst. Refs. 26, figs. 10

  13. Increasing the stability of DNA nanostructure templates by atomic layer deposition of Al2O3 and its application in imprinting lithography

    Directory of Open Access Journals (Sweden)

    Hyojeong Kim

    2017-11-01

    Full Text Available We present a method to increase the stability of DNA nanostructure templates through conformal coating with a nanometer-thin protective inorganic oxide layer created using atomic layer deposition (ALD. DNA nanotubes and origami triangles were coated with ca. 2 nm to ca. 20 nm of Al2O3. Nanoscale features of the DNA nanostructures were preserved after the ALD coating and the patterns are resistive to UV/O3 oxidation. The ALD-coated DNA templates were used for a direct pattern transfer to poly(L-lactic acid films.

  14. AlGaN/GaN high electron mobility transistor with Al2O3+BCB passivation

    International Nuclear Information System (INIS)

    Zhang Sheng; Yu Le; Ma Xiao-Hua; Wei Ke; Liu Guo-Guo; Huang Sen; Wang Xin-Hua; Pang Lei; Zheng Ying-Kui; Li Yan-Kui; Sun Bing; Liu Xin-Yu

    2015-01-01

    In this paper, Al 2 O 3 ultrathin film used as the surface passivation layer for AlGaN/GaN high electron mobility transistor (HEMT) is deposited by thermal atomic layer deposition (ALD), thereby avoiding plasma-induced damage and erosion to the surface. A comparison is made between the surface passivation in this paper and the conventional plasma enhanced chemical vapor deposition (PECVD) SiN passivation. A remarkable reduction of the gate leakage current and a significant increase in small signal radio frequency (RF) performance are achieved after applying Al 2 O 3 +BCB passivation. For the Al 2 O 3 +BCB passivated device with a 0.7 μm gate, the value of f max reaches up to 100 GHz, but it decreases to 40 GHz for SiN HEMT. The f max /f t ratio (≥ 4) is also improved after Al 2 O 3 +BCB passivation. The capacitance–voltage (C–V) measurement demonstrates that Al 2 O 3 +BCB HEMT shows quite less density of trap states (on the order of magnitude of 10 10  cm −2 ) than that obtained at commonly studied SiN HEMT. (paper)

  15. Residual stresses in the Al2O3 matrix of Al2O3ZrO2

    International Nuclear Information System (INIS)

    Feng, G.; Tsakalakos, T.; Mayo, W.; Wilfinger, K.; Cannon, W.R.

    1989-01-01

    Residual stresses in the Al 2 O 3 matrix of ground and unground surfaces of zirconia toughened alumina were measured with x-ray techniques. No net residual stresses were found on as-fired surfaces, but residual stresses were found on ground surfaces, increasing with severity of grinding and were proportional to the percent ZrO 2 undergoing the tetragonal monoclinic transformation during grinding. Principal stresses and directions with respect to the grinding direction were obtained. Also Warren-Averbach measurements were made on as- fired surfaces to determine the nonuniform stresses surrounding the particles. These stresses were also found to depend on the monoclinic content which in turn was controlled by the size of the particles

  16. Coating of Steel by Alkyd Resin Reinforced with Al2O3 Nanoparticles to Improve Corrosion Resistance

    Science.gov (United States)

    Kordzangeneh, Shirin; Naghibi, Sanaz; Esmaeili, Hamideh

    2018-01-01

    In this study, an alkyd/Al2O3 nanocomposite coating was prepared and applied on a stainless steel substrate. The Al2O3 nanoparticles (NPs) with different weight ratios (1, 2, and 3 wt.%) were added to the alkyd resin and coated on the substrate via dip-coating technique. Then, the dispersion of NPs in the coating film was investigated using scanning electron microscopy (SEM) and scanning probe microscopy (SPM). The coating thickness estimated by SEM was 20 μm. The corrosion behavior of the coating was examined through the Tafel polarization and salt spray tests. The results showed that the addition of Al2O3 NPs up to 2 wt.% will result in a dense and homogeneous coating which protects the substrate leading to lower corrosion current density from 9.2 × 10-6 to 1.65×10-9 A/cm2 compared with the uncoated stainless steel.

  17. Temperature-Dependent Thermal Boundary Conductance at Al/Al2O3 and Pt/Al2O3 interfaces

    Science.gov (United States)

    Hopkins, Patrick E.; Salaway, R. N.; Stevens, R. J.; Norris, P. M.

    2007-06-01

    With the ever-decreasing size of microelectronic devices, growing applications of superlattices, and development of nanotechnology, thermal resistances of interfaces are becoming increasingly central to thermal management. Although there has been much success in understanding thermal boundary conductance at low temperatures, the current models applied at temperatures more common in device operation are not adequate due to our current limited understanding of phonon transport channels. In this study, the scattering processes in Al and Pt films on Al2O3 substrates are examined by transient thermoreflectance testing at high temperatures. At high temperatures, traditional models predict the thermal boundary conductance to be relatively constant in these systems due to assumptions about phonon elastic scattering. Experiments, however, show an increase in the conductance indicating potential inelastic phonon processes.

  18. Pinning enhancement in MgB2 superconducting thin films by ...

    Indian Academy of Sciences (India)

    MgB2 thin films were fabricated on -plane Al2O3 (1 1 ¯ 02) substrates. First, deposition of boron was performed by rf magnetron sputtering on Al2O3 substrates and followed by a post-deposition annealing at 850 °C in magnesium vapour. In order to investigate the effect of Fe2O3 nanoparticles on the structural and ...

  19. Sol-gel-cum-hydrothermal synthesis of mesoporous Co-Fe@Al2O3 ...

    Indian Academy of Sciences (India)

    surface area, and narrow pore distribution are the key factors for an efficient adsorption of methylene blue on .... 3.1 XRD analysis. Figure 1 shows the XRD pattern of mesoporous Al2O3 and monometallic and bimetallic@Al2O3−MCM-41 samples. Mesoporous Al2O3 is .... Si−O−Si vibration bands of MCM-41 and Al2O3−.

  20. Operando Raman spectroscopy study on the deactivation of Pt/Al2O3 and Pt–Sn/Al2O3 propane dehydrogenation catalysts

    NARCIS (Netherlands)

    Sattler, J.J.H.B.|info:eu-repo/dai/nl/328235601; Beale, A.M.|info:eu-repo/dai/nl/325802068; Weckhuysen, B.M.|info:eu-repo/dai/nl/285484397

    2013-01-01

    The deactivation of 0.5 wt% Pt/Al2O3 and 0.5 wt% Pt–1.5 wt% Sn/Al2O3 catalysts has been studied by operando Raman spectroscopy during the dehydrogenation of propane and subsequent regeneration in air for 10 successive dehydrogenation–regeneration cycles. Furthermore, the reaction feed was altered by

  1. Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer deposition.

    Science.gov (United States)

    Scarel, Giovanna; Na, Jeong-Seok; Parsons, Gregory N

    2010-04-21

    Experimental transmission absorbance infrared spectra of γ-Al(2)O(3) showing evidence of the angular dependence of the peaks of surface modes appearing next to the longitudinal optical phonon frequency ω(LO) (the Berreman effect) are collected from heat-treated thin oxide films deposited with thickness uniformity on Si(100) using atomic layer deposition. The peak area of the most intense surface longitudinal optical mode is plotted versus the infrared beam incidence angle θ(0). The experimental points closely follow the sin(4)(θ(0)) function in a broad thickness range. The best match occurs at a critical thickness, where a linear relationship exists between the surface longitudinal optical mode intensity and film thickness. Simulations suggest that below the critical thickness the sin(4)(θ(0)) behavior can be explained by refraction phenomena at the air/thin film and thin film/substrate interfaces. Above the critical thickness, the experimentally obtained result is derived from field boundary conditions at the air/thin film interface. The sin(4)(θ(0)) functional trend breaks down far above the critical thickness. This picture indicates that infrared radiation has a limited penetration depth into the oxide film, similarly to electromagnetic waves in conductors. Consequently, surface longitudinal optical modes are viewed as bulk phonons excited down to the penetration depth of the infrared beam. Comparison with simulated data suggests that the infrared radiation absorptance of surface longitudinal optical modes tends to approach the sin(2)(θ(0)) trend. Reflection phenomena are considered to be the origin of the deviation from the sin(4)(θ(0)) trend related to refraction.

  2. Increasing the Aromatic Selectivity of Quinoline Hydrogenolysis Using Pd/MOx–Al2O3

    Energy Technology Data Exchange (ETDEWEB)

    Bachrach, Mark; Morlanes-Sanchez, Natalia; Canlas, Christian P.; Miller, Jeffrey T.; Marks, Tobin J.; Notestein, Justin M.

    2014-09-11

    Catalysts consisting of Pd nanoparticles supported on highly dispersed TiOx–Al2O3, TaOx–Al2O3, and MoOx–Al2O3 are studied for catalytic quinoline hydrogenation and selective C–N bond cleavage at 275 °C and 20 bar H2. The Pd/MOx–Al2O3 materials exhibit significantly greater aromatic product selectivity and thus 10–15 % less required H2 for a given level of denitrogenation relative to an unmodified Pd/Al2O3 catalyst.

  3. Al2O3 Coatings on Magnesium Alloy Deposited by the Fluidized Bed (FB Technique

    Directory of Open Access Journals (Sweden)

    Gabriele Baiocco

    2018-01-01

    Full Text Available Magnesium alloys are widely employed in several industrial domains for their outstanding properties. They have a high strength-weight ratio, with a density that is lower than aluminum (33% less, and feature good thermal properties, dimensional stability, and damping characteristics. However, they are vulnerable to oxidation and erosion-corrosion phenomena when applied in harsh service conditions. To avoid the degradation of magnesium, several coating methods have been presented in the literature; however, all of them deal with drawbacks that limit their application in an industrial environment, such as environmental pollution, toxicity of the coating materials, and high cost of the necessary machinery. In this work, a plating of Al2O3 film on a magnesium alloy realized by the fluidized bed (FB technique and using alumina powder is proposed. The film growth obtained through this cold deposition process is analyzed, investigating the morphology as well as tribological and mechanical features and corrosion behavior of the plated samples. The resulting Al2O3 coatings show consistent improvement of the tribological and anti-corrosive performance of the magnesium alloy.

  4. Kinetics of Transformation of Al2O3 to MgO·Al2O3 Spinel Inclusions in Mg-Containing Steel

    Science.gov (United States)

    Liu, Chunyang; Yagi, Motoki; Gao, Xu; Kim, Sun-joong; Huang, Fuxiang; Ueda, Shigeru; Kitamura, Shin-ya

    2018-02-01

    During ladle furnace refining, initial Al2O3 inclusions generally transform into MgO·Al2O3 spinel inclusions; these generated spinel inclusions consequently deteriorate the product quality. In this study, the transformation from Al2O3 to MgO·Al2O3 was investigated by immersing an Al2O3 rod into molten steel, which was in equilibrium with both MgO and MgO·Al2O3 spinel-saturated slag. A spinel layer, with a thickness of 4 μm, was generated on the Al2O3 rod surface just 10 s after its immersion at 1873 K (1600 °C). The thickness of the formed spinel layer increased with the immersion period and temperature. Moreover, the MgO content of the generated spinel layer also increased with the immersion period. In this study, the chemical reaction rate at 1873 K (1600 °C) was assumed to be sufficiently high, and only diffusion was considered as a rate-controlling step for this transformation. By evaluating the activation energy, MgO diffusion in the generated spinel layer was found to be the rate-controlling step. In addition, this estimation was confirmed by observing the Mg and Al concentration gradients in the generated spinel layer. The results of this study suggest that the MgO diffusion in the spinel inclusions plays a substantial role with regard to their formation kinetics.

  5. The MgO-Al2O3-SiO2 system - Free energy of pyrope and Al2O3-enstatite. [in earth mantle formation

    Science.gov (United States)

    Saxena, S. K.

    1981-01-01

    The model of fictive ideal components is used to determine Gibbs free energies of formation of pyrope and Al2O3-enstatite from the experimental data on coexisting garnet and orthopyroxene and orthopyroxene and spinel in the temperature range 1200-1600 K. It is noted that Al2O3 forms an ideal solution with MgSiO3. These thermochemical data are found to be consistent with the Al2O3 isopleths that could be drawn using most recent experimental data and with the reversed experimental data on the garnet-spinel field boundary.

  6. Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivity

    Science.gov (United States)

    Yang, Yu; Koeck, Franz A.; Dutta, Maitreya; Wang, Xingye; Chowdhury, Srabanti; Nemanich, Robert J.

    2017-10-01

    This study investigates how the surface conductivity of H-terminated diamond can be preserved and stabilized by using a dielectric layer with an in situ post-deposition treatment. Thin layers of Al2O3 were grown by plasma enhanced atomic layer deposition (PEALD) on H-terminated undoped diamond (100) surfaces. The changes of the hole accumulation layer were monitored by correlating the binding energy of the diamond C 1s core level with electrical measurements. The initial PEALD of 1 nm Al2O3 resulted in an increase of the C 1s core level binding energy consistent with a reduction of the surface hole accumulation and a reduction of the surface conductivity. A hydrogen plasma step restored the C 1s binding energy to the value of the conductive surface, and the resistance of the diamond surface was found to be within the range for surface transfer doping. Further, the PEALD growth did not appear to degrade the surface conductive layer according to the position of the C 1s core level and electrical measurements. This work provides insight into the approaches to establish and control the two-dimensional hole-accumulation layer of the H-terminated diamond and improve the stability and performance of H-terminated diamond electronic devices.

  7. Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

    Science.gov (United States)

    Chang, P. K.; Hwu, J. G.

    2018-02-01

    Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

  8. Interfacial and electrical properties of Al2O3/GaN metal-oxide-semiconductor junctions with ultrathin AlN layer

    Science.gov (United States)

    Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

    2017-12-01

    Ultrathin AlN layer deposited by atomic layer deposition (ALD) was employed in Al2O3/GaN metal-oxide-semiconductor (MOS) capacitors, and their interfacial and electrical properties were investigated using X-ray photoelectron spectroscopy (XPS) and current-voltage ( I-V) and capacitance-voltage ( C-V) measurements. XPS analyses revealed that the diffusion of N atoms into Al2O3 and the degradation of Al2O3 film quality were significant for the thickest Al2O3 (10 nm). The sample with a 10-nm-thick Al2O3 layer produced the highest leakage current and trap density. These results may result from the deteriorated interface characteristics near the AlN layer caused by long growth time. Therefore, it is suggested that the Al2O3 thickness (and optimal growth time) is a key factor in Al2O3/AlN/GaN MOS capacitors.

  9. Room temperature atomic layer deposited Al2O3 on CH3NH3PbI3 characterized by synchrotron-based X-ray photoelectron spectroscopy

    Science.gov (United States)

    Kot, Małgorzata; Das, Chittaranjan; Henkel, Karsten; Wojciechowski, Konrad; Snaith, Henry J.; Schmeisser, Dieter

    2017-11-01

    An ultrathin Al2O3 film deposited on methylammonium lead triiodide (CH3NH3PbI3) perovskite has the capability to suppress the carrier recombination process and improve the perovskite solar cells efficiency and stability. However, annealing at temperatures higher than 85 °C degrades the CH3NH3PbI3 perovskite film. The X-ray photoelectron spectroscopy study performed in this work indicates that it is possible to grow Al2O3 by atomic layer deposition on the perovskite at room temperature, however, besides pure Al2O3 some OH groups are found and the creation of lead and iodine oxides at the Al2O3/CH3NH3PbI3 interface takes place.

  10. Directed laser processing of compacted powder mixtures Al2O3-TiO2-Y2O3

    Directory of Open Access Journals (Sweden)

    Vlasova M.

    2013-01-01

    Full Text Available The phase formation, microstructure and surface texture of laser treated ternary powder mixtures of Al2O3-TiO2-Y2O3 had been studied. Rapid high temperature heating and subsequent rapid cooling due to the directed movement of the laser beam forms concave ceramic tracks. Phase composition and microstructure of the tracks depends on the Al2O3 content and the TiO2/Y2O3 ratio of the initial mixtures. The main phases observed are Y3Al5O12, Y2Ti2O7, Al2O3 and Al2TiO5. Due to the temperature gradient in the heating zone, complex layered structures are formed. The tracks consist of three main layers: a thin surface layer, a layer of crystallization products of eutectic alloys, and a lower sintered layer. The thickness of the crystallization layer and the shrinkage of the irradiation zone depend on the amount of Y3Al5O12 and Al2O3 crystallized from the melt.

  11. AlGaN/GaN high electron mobility transistor with Al2O3+BCB passivation

    Science.gov (United States)

    Zhang, Sheng; Wei, Ke; Yu, Le; Liu, Guo-Guo; Huang, Sen; Wang, Xin-Hua; Pang, Lei; Zheng, Ying-Kui; Li, Yan-Kui; Ma, Xiao-Hua; Sun, Bing; Liu, Xin-Yu

    2015-11-01

    In this paper, A12O3 ultrathin film used as the surface passivation layer for AlGaN/GaN high electron mobility transistor (HEMT) is deposited by thermal atomic layer deposition (ALD), thereby avoiding plasma-induced damage and erosion to the surface. A comparison is made between the surface passivation in this paper and the conventional plasma enhanced chemical vapor deposition (PECVD) SiN passivation. A remarkable reduction of the gate leakage current and a significant increase in small signal radio frequency (RF) performance are achieved after applying Al2O3+BCB passivation. For the Al2O3+BCB passivated device with a 0.7 μm gate, the value of fmax reaches up to 100 GHz, but it decreases to 40 GHz for SiN HEMT. The fmax/ft ratio (≥ 4) is also improved after Al2O3+BCB passivation. The capacitance-voltage (C-V) measurement demonstrates that Al2O3+BCB HEMT shows quite less density of trap states (on the order of magnitude of 1010 cm-2) than that obtained at commonly studied SiN HEMT.

  12. Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Liu, X.; Yeluri, R.; Kim, J.; Keller, S.; Mishra, U. K.; Jackson, C. M.; Arehart, A. R.; Ringel, S. A.; Wu, F.; Mazumder, B.; Speck, J. S.

    2016-01-01

    Al 2 O 3 films were grown in situ by metalorganic chemical vapor deposition at 900 °C on GaN of both Ga- and N-face polarities. High-resolution transmission electron microscopy revealed that the Al 2 O 3 films were crystalline and primarily γ-phase. The Al 2 O 3 /Ga-GaN and Al 2 O 3 /N-GaN interfaces were both atomically sharp, and the latter further exhibited a biatomic step feature. The corresponding current-voltage (J-V) characteristics were measured on a metal-Al 2 O 3 -semiconductor capacitor (MOSCAP) structure. The leakage current was very high when the Al 2 O 3 thickness was comparable with the size of the crystalline defects, but was suppressed to the order of 1 × 10 −8 A/cm 2 with larger Al 2 O 3 thicknesses. The interface states densities (D it ) were measured on the same MOSCAPs by using combined ultraviolet (UV)-assisted capacitance-voltage (C-V), constant capacitance deep level transient spectroscopy (CC-DLTS), and constant capacitance deep level optical spectroscopy (CC-DLOS) techniques. The average D it measured by CC-DLTS and CC-DLOS were 6.6 × 10 12 and 8.8 × 10 12 cm −2 eV −1 for Al 2 O 3 /Ga-GaN and 8.6 × 10 12 and 8.6 × 10 12  cm −2 eV −1 for Al 2 O 3 /N-GaN, respectively. The possible origins of the positive (negative) polarization compensation charges in Al 2 O 3 /Ga-GaN (Al 2 O 3 /N-GaN), including the filling of interface states and the existence of structure defects and impurities in the Al 2 O 3 layer, were discussed in accordance with the experimental results and relevant studies in the literature

  13. CHF Enhancement in Flow Boiling using Al2O3 Nano-Fluid and Al2O3 Nano-Particle Deposited Tube

    International Nuclear Information System (INIS)

    Kim, Tae Il; Chun, T. H.; Chang, S. H.

    2010-01-01

    Nano-fluids are considered to have strong ability to enhance CHF. Most CHF experiments using nano-fluids were conducted in pool boiling conditions. However there are very few CHF experiments with nano-fluids in flow boiling condition. In the present study, flow boiling CHF experiments using bare round tube with Al 2 O 3 nano-fluid and Al 2 O 3 nano-particle deposited tube with DI water were conducted under atmospheric pressure. CHFs were enhanced up to ∼ 80% with Al 2 O 3 nano-fluid and CHFs with Al 2 O 3 nano-particle deposited tube were also enhanced up to ∼ 80%. Inner surface of test section tube were observed by SEM and AFM after CHF experiments

  14. Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

    International Nuclear Information System (INIS)

    Dingemans, G.; Hoex, B.; Sanden, M. C. M. van de; Kessels, W. M. M.; Engelhart, P.; Seguin, R.; Einsele, F.

    2009-01-01

    The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al 2 O 3 was compared with results for thermal SiO 2 . For Al 2 O 3 and Al 2 O 3 /a-SiN x :H stacks on 2 Ω cm n-type c-Si, ultralow surface recombination velocities of S eff eff 800 deg. C) used for screen printed c-Si solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of H 2 and H 2 O. Al 2 O 3 also demonstrated UV stability with the surface passivation improving during UV irradiation.

  15. All-Aluminum Thin Film Transistor Fabrication at Room Temperature

    Directory of Open Access Journals (Sweden)

    Rihui Yao

    2017-02-01

    Full Text Available Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al2O3 insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO conductive layer, as one AZO/Al2O3 heterojunction unit. The measurements of transmittance electronic microscopy (TEM and X-ray reflectivity (XRR revealed the smooth interfaces between ~2.2-nm-thick Al2O3 layers and ~2.7-nm-thick AZO layers. The devices were entirely composited by aluminiferous materials, that is, their gate and source/drain electrodes were respectively fabricated by aluminum neodymium alloy (Al:Nd and pure Al, with Al2O3/AZO multilayered channel and AlOx:Nd gate dielectric layer. As a result, the all-aluminum TFT with two Al2O3/AZO heterojunction units exhibited a mobility of 2.47 cm2/V·s and an Ion/Ioff ratio of 106. All processes were carried out at room temperature, which created new possibilities for green displays industry by allowing for the devices fabricated on plastic-like substrates or papers, mainly using no toxic/rare materials.

  16. Interface between Al2O3 and 4H-SiC investigated by time-of-flight medium energy ion scattering

    Science.gov (United States)

    Linnarsson, M. K.; Hallén, A.; Khartsev, S.; Suvanam, S. S.; Usman, M.

    2017-12-01

    The formation of interfacial oxides during heat treatment of dielectric films on 4H-SiC has been studied. The 4H-SiC surface has been carefully prepared to create a clean and abrupt interface to Al2O3. An amorphous, 3 nm thick, Al2O3 film has been prepared on 4H-SiC by atomic layer deposition and rapid thermal annealing was then performed in N2O ambient at 700 °C and 1100 °C during 1 min. The samples were studied by time-of-flight medium energy ion scattering (ToF-MEIS), with sub-nanometer depth resolution and it is seen that, at both annealing temperatures, a thin SiO x (1  ⩽  x  ⩽  2) is formed at the interface. Our results further indicate that carbon remains in the silicon oxide in samples annealed at 700 °C. Additional electrical capacitance voltage measurements indicate that a large concentration of interface traps is formed at this temperature. After 1100 °C annealing, both MEIS and XRD measurements show that these features disappear, in accordance with electrical data.

  17. Data of ALD Al2O3 rear surface passivation, Al2O3 PERC cell performance, and cell efficiency loss mechanisms of Al2O3 PERC cell

    OpenAIRE

    Huang, Haibing; Lv, Jun; Bao, Yameng; Xuan, Rongwei; Sun, Shenghua; Sneck, Sami; Li, Shuo; Modanese, Chiara; Savin, Hele; Wang, Aihua; Zhao, Jianhua

    2017-01-01

    This data article is related to the recently published article ‘20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%’ (Huang et al., 2017) [1]. This paper is about passivated emitter and rear cell (PERC) structures and it describes the quality of the Al2O3 rear-surface passivation layer deposited by atomic layer deposition (ALD), in relation to the processing parameters (e.g. pre-clean treatment, deposition temperature, g...

  18. Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Ngo, Thong Q.; McDaniel, Martin D.; Ekerdt, John G.; Goble, Nicholas J.; Gao, Xuan P. A.; Posadas, Agham; Kormondy, Kristy J.; Demkov, Alexander A.; Lu, Sirong; Jordan-Sweet, Jean; Smith, David J.

    2015-01-01

    We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al 2 O 3 /TiO 2 -terminated SrTiO 3 (STO) grown by atomic layer deposition (ALD). The ALD growth of Al 2 O 3 on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylaluminum and water were used as co-reactants. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and ex situ cross-sectional transmission electron microscopy were used to determine the crystallinity of the Al 2 O 3 films. As-deposited Al 2 O 3 films grown above 300 °C were crystalline with the γ-Al 2 O 3 phase. In situ x-ray photoelectron spectroscopy was used to characterize the Al 2 O 3 /STO interface, indicating that a Ti 3+ feature in the Ti 2p spectrum of STO was formed after 2–3 ALD cycles of Al 2 O 3 at 345 °C and even after the exposure to trimethylaluminum alone at 300 and 345 °C. The interface quasi-2-DEG is metallic and exhibits mobility values of ∼4 and 3000 cm 2 V −1 s −1 at room temperature and 15 K, respectively. The interfacial conductivity depended on the thickness of the Al 2 O 3 layer. The Ti 3+ signal originated from the near-interfacial region and vanished after annealing in an oxygen environment

  19. In situ infrared spectroscopic analysis of the adsorption of aliphatic carboxylic acids to TiO 2, ZrO 2, Al 2O 3, and Ta 2O 5 from aqueous solutions

    Science.gov (United States)

    Dobson, Kevin D.; McQuillan, A. James

    1999-07-01

    The adsorption of a range of aliphatic mono- and di-carboxylic acids to metal oxides has been investigated using in situ attenuated total reflectance infrared spectroscopy. Thin films of TiO 2, ZrO 2, Al 2O 3, and Ta 2O 5 were prepared by evaporation the aqueous colloid oxides on single reflection ZnSe prisms. Formic and acetic acids were found to bind to ZrO 2 and Ta 2O 5, but showed no adsorption to TiO 2 and Al 2O 3. The dicarboxylic acids, oxalic, malonic, succinic, adipic, maleic, and fumaric acids, were found to adsorb to each of the metal oxide substrates. Oxalic and malonic acids were coordinated via ester linkages involving both carboxylate groups. The longer chain dicarboxylic acids coordinated via bridging bidentate interactions through each carboxylate group.

  20. First-principles characterization of a heteroceramic interface: ZrO2(001) deposited on an alpha-Al2O3(1(1)over-bar02) substrate

    DEFF Research Database (Denmark)

    Christensen, Asbjørn; Carter, Emily A.

    2000-01-01

    We have studied an alumina/zirconia interface using the all-electron projector augmented wave formalism within density functional theory. We present the electronic, structural, and energetic properties of the ZrO2(001)/(alpha -Al2O3(1 (1) over bar 02) interface as well as of the free alpha -Al2O3......(1 (1) over bar 02) and ZrO2(001) surfaces. We find that the generalized gradient correction significantly lowers the oxide surface energies, compared to values obtained by the local density approximation. The monoclinic-tetragonal transition in ZrO2(001) thin films is discussed as well as strain...

  1. Effective optimization of surface passivation on porous silicon carbide using atomic layer deposited Al2O3

    DEFF Research Database (Denmark)

    Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

    2017-01-01

    Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement...... of the PL intensity (up to 689%). The effect of thickness, annealing temperature, annealing duration and precursor purge time on the PL intensity of ALD Al2O3 films was investigated. In order to investigate the penetration depth and passivation effect in porous SiC, the samples were characterized by X...... effective method to enhance the luminescence efficiency of porous SiC....

  2. Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1-x as potential gate dielectrics for GaN/AlxGa1-xN/GaN high electron mobility transistors

    Science.gov (United States)

    Partida-Manzanera, T.; Roberts, J. W.; Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Sedghi, N.; Tripathy, S.; Potter, R. J.

    2016-01-01

    This paper describes a method to optimally combine wide band gap Al2O3 with high dielectric constant (high-κ) Ta2O5 for gate dielectric applications. (Ta2O5)x(Al2O3)1-x thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta2O5 molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al2O3 to 4.6 eV for pure Ta2O5. The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al2O3 up to 25.6 for Ta2O5. The effect of post-deposition annealing in N2 at 600 °C on the interfacial properties of undoped Al2O3 and Ta-doped (Ta2O5)0.12(Al2O3)0.88 films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al2O3/GaN-HEMT and (Ta2O5)0.16(Al2O3)0.84/GaN-HEMT samples increased by ˜1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al2O3 can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents.

  3. Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)x(Al2O3)1−x as potential gate dielectrics for GaN/AlxGa1−xN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Partida-Manzanera, T.; Roberts, J. W.; Sedghi, N.; Potter, R. J.; Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Tripathy, S.

    2016-01-01

    This paper describes a method to optimally combine wide band gap Al 2 O 3 with high dielectric constant (high-κ) Ta 2 O 5 for gate dielectric applications. (Ta 2 O 5 ) x (Al 2 O 3 ) 1−x thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped Al x Ga 1−x N/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta 2 O 5 molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al 2 O 3 to 4.6 eV for pure Ta 2 O 5 . The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al 2 O 3 up to 25.6 for Ta 2 O 5 . The effect of post-deposition annealing in N 2 at 600 °C on the interfacial properties of undoped Al 2 O 3 and Ta-doped (Ta 2 O 5 ) 0.12 (Al 2 O 3 ) 0.88 films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al 2 O 3 /GaN-HEMT and (Ta 2 O 5 ) 0.16 (Al 2 O 3 ) 0.84 /GaN-HEMT samples increased by ∼1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al 2 O 3 can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents

  4. Electrochemical promotion of propane oxidation on Pt deposited on a dense β"-Al2O3 ceramic Ag+ conductor

    Directory of Open Access Journals (Sweden)

    Michail eTsampas

    2013-08-01

    Full Text Available A new kind of electrochemical catalyst based on a Pt porous catalyst film deposited on a β"-Al2O3 ceramic Ag+ conductor was developed and evaluated during propane oxidation. It was observed that upon anodic polarization, the rate of propane combustion was significantly electropromoted up to 400%. Moreover, for the first time, exponential increase of the catalytic rate was evidenced during galvanostatic transient experiment in excellent agreement with EPOC equation.

  5. Electrochemical promotion of propane oxidation on Pt deposited on a dense β"-Al2O3 ceramic Ag+ conductor

    Science.gov (United States)

    Tsampas, Michail; Kambolis, Anastasios; Obeid, Emil; Lizarraga, Leonardo; Sapountzi, Foteini; Vernoux, Philippe

    2013-08-01

    A new kind of electrochemical catalyst based on a Pt porous catalyst film deposited on a β"-Al2O3 ceramic Ag+ conductor was developed and evaluated during propane oxidation. It was observed that upon anodic polarization, the rate of propane combustion was significantly electropromoted up to 400%. Moreover, for the first time, exponential increase of the catalytic rate was evidenced during galvanostatic transient experiment in excellent agreement with EPOC equation.

  6. Influence of Al2O3 addition on microstructure and mechanical properties of 3YSZ-Al2O3 composites

    International Nuclear Information System (INIS)

    Abden, Md. Jaynul; Afroze, Jannatul Dil; Gafur, Md. Abdul; Chowdhury, Faruque-Uz-Zaman

    2015-01-01

    The effect of the amount of Al 2 O 3 content on microstructure, tetragonal phase stability and mechanical properties of 3YSZ-Al 2 O 3 composites are investigated in this study. The ceramic composites are obtained by means of uniaxial compacting at 210 MPa and green compacts are sintered at 1550 C for 3 h in air. The monoclinic zirconia (m-ZrO 2 ) phase has completely been transformed into tetragonal zirconia (t-ZrO 2 ) phase with corresponding higher Al 2 O 3 content. The t-ZrO 2 grains induce transgranular fracture mode that has contribution in improvement of fracture toughness. The maximum flexural strength of 340 MPa, Vickers hardness value of 14.31 GPa and fracture toughness of 5.1 MPa x m 1/2 in the composition containing 40 wt.-% Al 2 O 3 is attributed to the microstructure with t-ZrO 2 grains as inter- and intragranular particles in the Al 2 O 3 grains, which makes it suitable for dental applications.

  7. Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents

    Science.gov (United States)

    Qi, Yanfei; Zhao, Ce Zhou; Liu, Chenguang; Fang, Yuxiao; He, Jiahuan; Luo, Tian; Yang, Li; Zhao, Chun

    2018-04-01

    In this study, the influence of the Ti and TiN top electrodes on the switching behaviors of the Al2O3/Pt resistive random access memory devices with various compliance currents (CCs, 1-15 mA) has been compared. Based on the similar statistical results of the resistive switching (RS) parameters such as V set/V reset, R HRS/R LRS (measured at 0.10 V) and resistance ratio with various CCs for both devices, the Ti/Al2O3/Pt device differs from the TiN/Al2O3/Pt device mainly in the forming process rather than in the following switching cycles. Apart from the initial isolated state, the Ti/Al2O3/Pt device has the initial intermediate state as well. In addition, its forming voltage is relatively lower. The conduction mechanisms of the ON and OFF state for both devices are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Therefore, with the combined modulations of the CCs and the stop voltages, the TiN/Al2O3/Pt device is more stable for nonvolatile memory applications to further improve the RS performance.

  8. Theoretical Investigation of H2 Combustion on alphaAl2O3 Support

    National Research Council Canada - National Science Library

    Synowczynski, Jennifer; Andzelm, Jan W; Vlachos, D. G

    2008-01-01

    ... (alpha alumina oxide (alphaAl2O3)) on the dissociation of molecular hydrogen (H2), molecular oxygen (O2), hydroxyl (OH), water (H2O), and the surface diffusion of oxygen and hydrogen species along the Al2O3...

  9. H2 assisted NH3-SCR over Ag/Al2O3 for automotive applications

    DEFF Research Database (Denmark)

    Fogel, Sebastian

    The up-coming strict emission legislation demands new and improved catalysts for diesel vehicle deNOx. The demand for low-temperature activity is especially challenging. H2-assisted NH3-SCR over Ag/Al2O3 has shown a very promising low-temperature activity and a combination of Ag/Al2O3 and Fe-BEA ...

  10. Microstructural characterization in diffusion bonded TiC–Al2O3/Cr18 ...

    Indian Academy of Sciences (India)

    Unknown

    Al2O3/Cr18–Ni8 joint. The ... Ceramic matrix composite, TiC–Al2O3, has unique char- ... for 150 s. The microstructural observations were perfor- med by optical microscope (OM) and JXA-840 scanning electron microscope (SEM). The chemical ...

  11. High Elastic Moduli of a 54Al2O3-46Ta2O5 Glass Fabricated via Containerless Processing.

    Science.gov (United States)

    Rosales-Sosa, Gustavo A; Masuno, Atsunobu; Higo, Yuji; Inoue, Hiroyuki; Yanaba, Yutaka; Mizoguchi, Teruyasu; Umada, Takumi; Okamura, Kohei; Kato, Katsuyoshi; Watanabe, Yasuhiro

    2015-10-15

    Glasses with high elastic moduli have been in demand for many years because the thickness of such glasses can be reduced while maintaining its strength. Moreover, thinner and lighter glasses are desired for the fabrication of windows in buildings and cars, cover glasses for smart-phones and substrates in Thin-Film Transistor (TFT) displays. In this work, we report a 54Al2O3-46Ta2O5 glass fabricated by aerodynamic levitation which possesses one of the highest elastic moduli and hardness for oxide glasses also displaying excellent optical properties. The glass was colorless and transparent in the visible region, and its refractive index nd was as high as 1.94. The measured Young's modulus and Vickers hardness were 158.3 GPa and 9.1 GPa, respectively, which are comparable to the previously reported highest values for oxide glasses. Analysis made using (27)Al Magic Angle Spinning Nuclear Magnetic Resonance (MAS NMR) spectroscopy revealed the presence of a significantly large fraction of high-coordinated Al in addition to four-coordinated Al in the glass. The high elastic modulus and hardness are attributed to both the large cationic field strength of Ta(5+) ions and the large dissociation energies per unit volume of Al2O3 and Ta2O5.

  12. Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells

    KAUST Repository

    Roelofs, Katherine E.

    2013-03-21

    Despite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article, we demonstrate that ultrathin recombination barrier layers of Al2O3 deposited by atomic layer deposition can improve the performance of cadmium sulfide (CdS) quantum dot-sensitized solar cells with spiro-OMeTAD as the solid-state hole transport material. We explored depositing the Al2O3 barrier layers either before or after the QDs, resulting in TiO2/Al2O3/QD and TiO 2/QD/Al2O3 configurations. The effects of barrier layer configuration and thickness were tracked through current-voltage measurements of device performance and transient photovoltage measurements of electron lifetimes. The Al2O3 layers were found to suppress dark current and increase electron lifetimes with increasing Al 2O3 thickness in both configurations. For thin barrier layers, gains in open-circuit voltage and concomitant increases in efficiency were observed, although at greater thicknesses, losses in photocurrent caused net decreases in efficiency. A close comparison of the electron lifetimes in TiO2 in the TiO2/Al2O3/QD and TiO2/QD/Al2O3 configurations suggests that electron transfer from TiO2 to spiro-OMeTAD is a major source of recombination in ss-QDSSCs, though recombination of TiO2 electrons with oxidized QDs can also limit electron lifetimes, particularly if the regeneration of oxidized QDs is hindered by a too-thick coating of the barrier layer. © 2013 American Chemical Society.

  13. Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation

    Science.gov (United States)

    Ke, M.; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S.

    2016-07-01

    The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (Dit) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al2O3/GeOx/n-Ge and HfO2/Al2O3/GeOx/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al2O3 and HfO2/Al2O3 combined with plasma post oxidation. It is found that the slow traps can locate in the GeOx interfacial layer, not in the ALD Al2O3 layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al2O3/GeOx/Ge gate stacks, with changing the thickness of GeOx, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeOx, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeOx.

  14. Photochemistry of the α-Al2O3-PETN Interface

    Directory of Open Access Journals (Sweden)

    Roman V. Tsyshevsky

    2016-02-01

    Full Text Available Optical absorption measurements are combined with electronic structure calculations to explore photochemistry of an α-Al2O3-PETN interface formed by a nitroester (pentaerythritol tetranitrate, PETN, C5H8N4O12 and a wide band gap aluminum oxide (α-Al2O3 substrate. The first principles modeling is used to deconstruct and interpret the α-Al2O3-PETN absorption spectrum that has distinct peaks attributed to surface F0-centers and surface—PETN transitions. We predict the low energy α-Al2O3 F0-center—PETN transition, producing the excited triplet state, and α-Al2O3 F0-center—PETN charge transfer, generating the PETN anion radical. This implies that irradiation by commonly used lasers can easily initiate photodecomposition of both excited and charged PETN at the interface. The feasible mechanism of the photodecomposition is proposed.

  15. A study of the effect of surface pretreatment on atomic layer deposited Al2O3 interface with GaN

    Science.gov (United States)

    Gao, Jianyi; Li, Wenwen; Mandal, Saptarshi; Chowdhury, Srabanti

    2017-08-01

    Al2O3 has been an attractive gate dielectric for GaN power devices owing to its large conduction band offset with GaN ( 2.13eV), relatively high dielectric constant ( 9.0) and high breakdown electric field ( 10 MV/cm). Due to exceptional control over film uniformity and deposition rate, atomic layer deposition (ALD) has been widely used for Al2O3 deposition. The major obstacle to ALD Al2O3 on GaN is its high interface-state density (Dit) caused by incomplete chemical bonds, native oxide layer and impurities at the Al2O3/GaN interface. Therefore, an appropriate surface pretreatment prior to deposition is essential for obtaining high-quality interface. In this study, we investigated the effect of TMA, H2O and Ar/N2 plasma pretreatment on Dit and border traps (Nbt). 5 cycles of TMA purge, 5 cycles of H2O purge and Ar/N2 plasma pretreatment were conducted on GaN prior to deposition of ALD Al2O3. Al2O3/GaN metaloxide-semiconductor capacitors (MOSCAPs) were fabricated for the characterization of Dit and Nbt using UV-assisted capacitance-voltage (C-V) technique. The results show that TMA and H2O pretreatment had trivial effects on interface engineering whereas Ar/N2 plasma pretreatment slightly reduced Dit and significantly reduced Nbt.

  16. Synthesis of new metal-matrix Al-Al2O3-graphene composite materials

    Science.gov (United States)

    Elshina, L. A.; Muradymov, R. V.; Kvashnichev, A. G.; Vichuzhanin, D. I.; Molchanova, N. G.; Pankratov, A. A.

    2017-08-01

    The mechanism of formation of ceramic microparticles (alumina) and graphene in a molten aluminum matrix is studied as a function of the morphology and type of precursor particles, the temperature, and the gas atmosphere. The influence of the composition of an aluminum composite material (as a function of the concentration and size of reinforcing particles) on its mechanical and corrosion properties, melting temperature, and thermal conductivity is investigated. Hybrid metallic Al-Al2O3-graphene composite materials with up to 10 wt % alumina microparticles and 0.2 wt % graphene films, which are uniformly distributed over the metal volume and are fully wetted with aluminum, are synthesized during the chemical interaction of a salt solution containing yttria and boron carbide with molten aluminum in air. Simultaneous introduction of alumina and graphene into an aluminum matrix makes it possible to produce hybrid metallic composite materials having a unique combination of the following properties: their thermal conductivity is higher than that of aluminum, their hardness and strength are increased by two times, their relative elongation during tension is increased threefold, and their corrosion resistance is higher than that of initial aluminum by a factor of 2.5-4. We are the first to synthesize an in situ hybrid Al-Al2O3-graphene composite material having a unique combination of some characteristics. This material can be recommended as a promising material for a wide circle of electrical applications, including ultrathin wires, and as a structural material for the aerospace industry, the car industry, and the shipbuilding industry.

  17. Surface passivation and optical characterization of Al2O3/a-SiCx stacks on c-Si substrates.

    Science.gov (United States)

    López, Gema; Ortega, Pablo R; Voz, Cristóbal; Martín, Isidro; Colina, Mónica; Morales, Anna B; Orpella, Albert; Alcubilla, Ramón

    2013-01-01

    The aim of this work is to study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition (ALD) at 200 °C and were complemented with a layer of a-SiCx deposited by plasma-enhanced chemical vapor deposition (PECVD) to form anti-reflection coating (ARC) stacks with a total thickness of 75 nm. A comparative study has been carried out on polished and randomly textured wafers. We have experimentally determined the optimum thickness of the stack for photovoltaic applications by minimizing the reflection losses over a wide wavelength range (300-1200 nm) without compromising the outstanding passivation properties of the Al2O3 films. The upper limit of the surface recombination velocity (S eff,max) was evaluated at a carrier injection level corresponding to 1-sun illumination, which led to values below 10 cm/s. Reflectance values below 2% were measured on textured samples over the wavelength range of 450-1000 nm.

  18. Thermal expansion and thermal conductivity characteristics of Cu–Al2O3 nanocomposites

    International Nuclear Information System (INIS)

    Fathy, A.; El-Kady, Omyma

    2013-01-01

    Highlights: ► The copper–alumina composites were prepared by powder metallurgy (P/M) method with nano-Cu/Al 2 O 3 powders. ► The Al 2 O 3 content was added by 2.5, 7.5 and 12.5 wt.% to the Cu matrix to detect its effect on thermal conductivity and thermal expansion behavior of the resultant Cu/Al 2 O 3 nanocomposites. ► The results showed that alumina nanoparticles (30 nm) were distributed in the copper matrix in a homogeneous manner. ► The measured thermal conductivity for the Cu–Al 2 O 3 nanocomposites decreased from 384 to 78.1 W/m K with increasing Al 2 O 3 content from 0 to 12.5 wt.%. ► Accordingly, the coefficient of thermal expansion (CTE) was tailored from 33 × 10 −6 to 17.74 × 10 −6 /K, which is compatible with the CTE of semiconductors in electronic packaging applications. - Abstract: Copper–alumina composites were prepared by powder metallurgy (P/M) technology. Nano-Cu/Al 2 O 3 powders, was deoxidized from CuO/Al 2 O 3 powders which synthesized by thermochemical technique by addition of Cu powder to an aqueous solution of aluminum nitrate. The Al 2 O 3 content was added by 2.5, 7.5 and 12.5 wt.% to the Cu matrix to detect its effect on thermal conductivity and thermal expansion behavior of the resultant Cu/Al 2 O 3 nanocomposites. The results showed that alumina nanoparticles (30 nm) were distributed in the copper matrix in a homogeneous manner. The measured thermal conductivity for the Cu–Al 2 O 3 nanocomposites decreased from 384 to 78.1 W/m K with increasing Al 2 O 3 content from 0 to 12.5 wt.%. The large variation in the thermal conductivities can be related to the microstructural characteristics of the interface between Al 2 O 3 and the Cu-matrix. Accordingly, the coefficient of thermal expansion (CTE) was tailored from 33 × 10 −6 to 17.74 × 10 −6 /K, which is compatible with the CTE of semiconductors in electronic packaging applications. The reduction of thermal conductivity and coefficient of thermal expansion were

  19. Interface behaviour of Al2O3/Ti joints produced by liquid state bonding

    International Nuclear Information System (INIS)

    Lemus R, J.; Guevara L, A. O.; Zarate M, J.

    2014-08-01

    The main objective of this work was to determine various aspects during brazing of Al 2 O 3 samples to commercially titanium alloy grade 4 with biocompatibility properties, using a Au-foil as joining element. Al 2 O 3 ceramic was previously produced by sintering of powder cylindrical shape at 1550 grades C for 120 minutes. Previously to joining experiments, the surface of Al 2 O 3 samples were coating, by chemical vapor depositions (CVD) process, with a Mo layer of 2 and 4 μm thick and then stacked together with the Ti samples. Joining experiments were carried out on Al 2 O 3 -Mo/Au/Ti combinations at temperature of 1100 grades C using different holding times under vacuum atmosphere. The experimental results show a successful joining Mo-Al 2 O 3 to Ti. Analysis by scanning electron microscopy (Sem) revealed that joining of Al 2 O 3 to metal occurred by the formation of a homogeneous diffusion zone with no interfacial cracking or porosity at the interface. Results by electron probe micro analysis (EPMA) of Al 2 O 3 -Mo/Au/Ti combinations revealed that Mo traveled inside the joining elements and remained as solid solutions, however during cooling process Mo had a tendency to stay as a precipitate phase and atomic distributions of elements show a concentration line of Mo inside the joining element Au. On the other hand, well interaction of Ti with Au form different phases; like Ti 3 Au and Ti Au. (author)

  20. Preparation and structures of plasma-sprayed γ- and α-Al2O3 coatings

    International Nuclear Information System (INIS)

    Heintze, G.N.; Uematsu, S.

    1992-01-01

    As-sprayed Al 2 O 3 coatings containing more than 99.5% γ-Al 2 O 3 were prepared by optimizing torch parameters. Lamellae were 1-4 μm thick with grains ranging from 0.1 to 1 μm in diameter. Using the same torch conditions, but slowly traversing the torch over the substrate, coatings containing α-Al 2 O 3 were produced. Three types of microstructures were observed in each pass of the torch: type I, in the lower region, believed to have nucleated as γ-Al 2 O 3 and transformed to α-Al 2 O 3 from the heat of the torch and coating; type II, above type I, which nucleated as α-Al 2 O 3 and had separate lamellae because solidifiction was completed before the next droplet arrived; type III, in the upper region, which nucleated as α-Al 2 O 3 and contained grains over 200 μm in length because the previous droplet had not finished solidifying before the next droplet impacted. Thermal expansion and pore size distributions were measured, as also were temperatures within the coatings during their deposition. (orig.)

  1. Fabrication of hierarchical porous ZnO-Al2O3 microspheres with enhanced adsorption performance

    Science.gov (United States)

    Lei, Chunsheng; Pi, Meng; Xu, Difa; Jiang, Chuanjia; Cheng, Bei

    2017-12-01

    Hierarchical porous ZnO-Al2O3 microspheres were fabricated through a simple hydrothermal route. The as-prepared hierarchical porous ZnO-Al2O3 composites were utilized as adsorbents to remove organic dye Congo red (CR) from water. The ZnO-Al2O3 composites had morphology of microspheres with diameters in the range of 12-16 μm, which were assembled by nanosheets with thicknesses of approximately 60 nm. The adsorption kinetics of CR onto the ZnO-Al2O3 composites was properly fitted by the pseudo-second-order kinetic model. The equilibrium adsorption data were perfectly described by the Langmuir isotherm and had a maximum adsorption capacity that reached 397 mg/g, which was significantly higher than the value of the pure alumina (Al2O3) and zinc oxide (ZnO) samples. The superior CR removal efficiency of the ZnO-Al2O3 composites was attributed to its well-developed hierarchical porous structures and larger specific surface area (201 m2/g), which were conducive to the diffusion and adsorption of CR molecules. Moreover, the regeneration study reveals that the ZnO-Al2O3 composites have suitable stability and reusability. The results also indicate that the as-prepared sample can act as a highly effective adsorbent in anionic dye removal from wastewater.

  2. Preparation of mullite whiskers reinforced SiC/Al2O3 composites by microwave sintering

    Directory of Open Access Journals (Sweden)

    Wei Li

    2016-12-01

    Full Text Available Mullite whiskers reinforced SiC/Al2O3 composites were prepared by microwave sintering in a microwave chamber with TE666 resonant mode. Original SiC particles were coated with SiO2 using sol-gel processing and mixed with Al2O3 particles. Mullite was formed in the reaction between SiO2 and Al2O3. The isostatically pressed cylindrical pellets were sintered from 1350 °C to 1600 °C for 30 min. Physical and chemical responses were investigated by detecting changes in reflected power during the microwave sintering process. XRD was carried out to characterize the samples and showed that mullite could be formed at 1200 °C. Bridging of mullite whiskers between Al2O3 and SiC particles was observed by SEM and is due to a so-called local hot spot effect, which was the unique feature for microwave sintering. The optimized microwave sintering temperature was 1500 °C corresponding to the maximum amount of mullite whiskers within SiC/Al2O3 composites. The high electro-magnetic field enhanced the decomposition of mullite at higher temperatures above 1550 °C. The mechanical properties of mullite whiskers reinforced SiC/Al2O3 composites are much better than the SiC/Al2O3 composites without mullite whiskers.

  3. Influence of Al2O3 reinforcement on precipitation kinetic of Cu–Cr nanocomposite

    International Nuclear Information System (INIS)

    Sheibani, S.; Ataie, A.; Heshmati-Manesh, S.; Caballero, A.; Criado, J.M.

    2011-01-01

    Highlights: ► Cr precipitation in Cu-1 wt.% Cr solid solution is based on nucleation and growth models. ► The overall ageing process is accelerated by the presence of Al 2 O 3 reinforcement. ► Al 2 O 3 –Cu interfaces act as primary nucleation sites. ► Structural defects act as secondary nucleation sites. - Abstract: In this paper, the kinetic of precipitation process in mechanically alloyed Cu-1 wt.% Cr and Cu-1 wt.% Cr/3 wt.% Al 2 O 3 solid solution was compared using differential scanning calorimetry (DSC), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The ageing kinetics in Cu–Cr and Cu–Cr/Al 2 O 3 can be described using Johnson–Mehl–Avrami (JMA) and Sestak–Berggren (SB) models, respectively. These different behaviors have been discussed in details. It was found that in presence of Al 2 O 3 reinforcement, the ageing activation energy is decreased and the overall ageing process is accelerated. This behavior is probably due to higher dislocation density previously obtained during ball milling and Al 2 O 3 –Cu interface. TEM observations confirm that Al 2 O 3 –Cu interface and structural defects act as a primary and secondary nucleation sites, respectively.

  4. Phase relations in the SiC-Al2O3-Pr2O3 system

    International Nuclear Information System (INIS)

    Pan, W.; Wu, L.; Jiang, Y.; Huang, Z.

    2016-01-01

    Phase relations in the Si-Al-Pr-O-C system, including the SiC-Al 2 O 3 -Pr 2 O 3 , the Al 2 O 3 -Pr 2 O 3 -SiO 2 and the SiC-Al 2 O 3 -Pr 2 O 3 -SiO 2 subsystems, were determined by means of XRD phase analysis of solid-state-reacted samples fabricated by using SiC, Al 2 O 3 , Pr 2 O 3 and SiO 2 powders as the starting materials. Subsolidus phase diagrams of the systems were presented. Two Pr-aluminates, namely PrAlO 3 (PrAP) and PrAl 11 O 18 (β(Pr) β-Al 2 O 3 type) were formed in the SiC-Al 2 O 3 -Pr 2 O 3 system. SiC was compatible with both of them. Pr-silicates of Pr 2 SiO 5 , Pr 2 Si 2 O 7 and Pr 9.33 Si 6 O 26 (H(Pr) apatite type) were formed owing to presence of SiO 2 impurity in the SiC powder. The presence of the SiO 2 extended the ternary system of SiC-Al 2 O 3 -Pr 2 O 3 into a quaternary system of SiC-Al 2 O 3 -SiO 2 -Pr 2 O 3 (Si-Al-Pr-O-C). SiC was compatible with Al 2 O 3 , Pr 2 O 3 and the Pr-silicates. The effect of SiO 2 on the phase relations and liquid phase sintering of SiC ceramics was discussed.

  5. Tribological evaluation of an Al2O3-SiO2 ceramic fiber candidate for high temperature sliding seals

    Science.gov (United States)

    Dellacorte, Christopher; Steinetz, Bruce

    1994-01-01

    A test program to determine the relative sliding durability of an alumina-silica candidate ceramic fiber for high temperature sliding seal applications is described. Pin-on-disk tests were used to evaluate the potential seal material by sliding a tow or bundle of the candidate ceramic fiber against a superalloy test disk. Friction was measured during the tests and fiber wear, indicated by the extent of fibers broken in the tow or bundle, was measured at the end of each test. Test variables studied included ambient temperatures from 25 to 900 C, loads from 1.3 to 21.2 N, and sliding velocities from 0.025 to 0.25 m/sec. In addition, the effects of fiber diameter and elastic modulus on friction and wear were measured. Thin gold films deposited on the superalloy disk surface were evaluated in an effort to reduce friction and wear of the fibers. In most cases, wear increased with test temperature. Friction ranged from 0.36 at 500 C and low velocity (0.025 m/sec) to over 1.1 at 900 C and high velocity (0.25 m/sec). The gold films resulted in satisfactory lubrication of the fibers at 25 C. At elevated temperatures diffusion of substrate elements degraded the films. These results indicate that the alumina-silica (Al2O3-SiO2) fiber is a good candidate material system for high temperature sliding seal applications. More work is needed to reduce friction.

  6. Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN

    Science.gov (United States)

    Chan, Silvia H.; Bisi, Davide; Liu, Xiang; Yeluri, Ramya; Tahhan, Maher; Keller, Stacia; DenBaars, Steven P.; Meneghini, Matteo; Mishra, Umesh K.

    2017-11-01

    This paper investigates the effects of the oxygen precursor flow supplied during metalorganic chemical vapor deposition (MOCVD) of Al2O3 films on the forward bias behavior of Al2O3/GaN metal-oxide-semiconductor capacitors. The low oxygen flow (100 sccm) delivered during the in situ growth of Al2O3 on GaN resulted in films that exhibited a stable capacitance under forward stress, a lower density of stress-generated negative fixed charges, and a higher dielectric breakdown strength compared to Al2O3 films grown under high oxygen flow (480 sccm). The low oxygen grown Al2O3 dielectrics exhibited lower gate current transients in stress/recovery measurements, providing evidence of a reduced density of trap states near the GaN conduction band and an enhanced robustness under accumulated gate stress. This work reveals oxygen flow variance in MOCVD to be a strategy for controlling the dielectric properties and performance.

  7. Luminescence emission spectra of several Al2O3 TL materials

    International Nuclear Information System (INIS)

    Petoe, A.

    1996-01-01

    The paper reports on the radioluminescence (RL) and the thermoluminescence (TL) emission characteristics of several aluminium-oxide dosimeter materials: 'pure' a-Al 2 O 3 (corundum), Al 2 O 3 :C (TLK-500), Al 2 O 3 :Si, Ti, and Al 2 O 3 :Mg, Y. The general feature of the RL spectra is a strong emission line at 695 nm caused by the Cr 3+ impurity, and a wide UV band around 310 nm, which is related to F + -centres. A further emission appears around 420 nm in all of the 'doped' materials. However, the origin of this band is not the same an all phosphors: in Al 2 O 3 :Si, Ti it is associated with Ti 3+ , while in the other two samples it is more likely to be due to F-centres. Al 2 O 3 :Mg, Y shows several more emission lines between 450 and 600 nm, which increase with increasing dopant concentration and therefore these are attributed to Y 3+ impurity. The most obvious feature of the TL emission spectra is the lack of the 310 nm band. Apart from this, all the other emission bands found in the RL are clearly identifiable, and show the same intensity ratios. Corundum shows three major TL peaks at 90, 180 and 350 o C, all of them featuring the Cr 3+ emission. The two glow peaks of Al 2 O 3 :Si, Ti at 120 and 270 o C exhibit the same emission spectra: a strong Cr 3+ line and a somewhat weaker band around 410-420 nm. It is remarkable, that in Al 2 O 3 :C and in Al 2 O 3 :Mg, Y the different glow peaks have different emission spectra. In Al 2 O 3 :C the low temperature, 120 o C peak emits the Cr 3+ line, while the main dosimetry peak at 180 o C exhibits only the 410-420 nm band. On the other hand, in Al 2 O 3 :Mg, Y this blue band appears only in a separated glow peak around 270 o C, while the other three glow peaks at 120, 180 and 350 o C show the Cr 3+ and Y 3+ related emission lines. The detailed knowledge of the RL and TL emission spectra of different Al 2 O 3 TL dosimeters can be used to improve the performance of routine dosimetry work. (author)

  8. Al2 O3:Cr,Ni: a possible thermoluminescent dosemeter

    International Nuclear Information System (INIS)

    Mariani R, Francisco; Roman B, Alvaro; Saavedra S, Renato; Ibarra S, Angel

    1996-01-01

    Results from a study on the thermoluminescent (Tl) emission from Al 2 O 3 :Cr,Ni are presented. The measurements were obtained for evaluation of the Al 2 O 3 :Cr,Ni dosimetric properties. Different crystal batches were exposed to two kind of ionizing radiation (X-ray and β - ). The Tl spectrum has a main peak with high thermal and optical stability, deviating from linearity for doses lower than 3.6 Gy. Furthermore, this material shows advantages (thermal resistance, reusability, multiple heating cycles) compared to TLD-100. Measured Al 2 O 3 :Cr,Ni properties indicate that it could be used as a dosemeter. (author)

  9. High energy transmission of Al2O3 doped with light transition metals

    KAUST Repository

    Schuster, Cosima

    2012-01-31

    The transmission of transparent colored ceramics based on Al2O3doped with light transition metals is measured in the visible and infrared range. To clarify the role of the dopands we perform ab initiocalculations. We discuss the electronic structure and present optical spectra obtained in the independent particle approximation. We argue that the gross spectral features of Co- and Ni-doped Al2O3 samples are described by our model, while the validity of the approach is limited for Cr-doped Al2O3.

  10. Experiments on thermal interactions: Tests with Al2O3 droplets and water

    International Nuclear Information System (INIS)

    Peppler, W.; Till, W.; Kaiser, A.

    1991-09-01

    Within the analysis of severe highly hypothetical fast breeder accidents the consequences of a fuel-coolant interaction have to be considered, i.e. the thermal interaction between hot molten fuel and sodium. To improve principal knowledge on the fragmentation process during the interaction of a hot droplet with a cold fluid, a series of experiments was performed with single droplets of molten Al 2 O 3 as the hot liquid and water as the cold and easily volatile fluid. To initiate fragmentation of the droplet pressure pulses of up to 1 MPa were generated in the water by a magnetic hammer. The events were filmed by a high speed camera with up to 10 5 pictures per second. Details of the interactions can be deduced from the films and from the pressure histories. The existence of a vapour trail in all experiments indicates complex heat and mass transfer processes occurring in the vapour film spontaneously formed between droplet and cold fluid. Fragmentation was initiated by local events in the vapour trail area. (orig.) [de

  11. Minimizing of the boundary friction coefficient in automotive engines using Al2O3 and TiO2 nanoparticles

    International Nuclear Information System (INIS)

    Ali, Mohamed Kamal Ahmed; Xianjun, Hou; Elagouz, Ahmed; Essa, F.A.; Abdelkareem, Mohamed A. A.

    2016-01-01

    Minimizing of the boundary friction coefficient is critical for engine efficiency improvement. It is known that the tribological behavior has a major role in controlling the performance of automotive engines in terms of the fuel consumption. The purpose of this research is an experimental study to minimize the boundary friction coefficient via nano-lubricant additives. The tribological characteristics of Al 2 O 3 and TiO 2 nano-lubricants were evaluated under reciprocating test conditions to simulate a piston ring/cylinder liner interface in automotive engines. The nanoparticles were suspended in a commercially available lubricant in a concentration of 0.25 wt.% to formulate the nano-lubricants. The Al 2 O 3 and TiO 2 nanoparticles had sizes of 8–12 and 10 nm, respectively. The experimental results have shown that the boundary friction coefficient reduced by 35–51% near the top and bottom dead center of the stroke (TDC and BDC) for the Al 2 O 3 and TiO 2 nano-lubricants, respectively. The anti-wear mechanism was generated via the formation of protective films on the worn surfaces of the ring and liner. These results will be a promising approach for improving fuel economy in automotive.

  12. The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3

    Science.gov (United States)

    Liao, Baochen; Stangl, Rolf; Mueller, Thomas; Lin, Fen; Bhatia, Charanjit S.; Hoex, Bram

    2013-01-01

    The effect of light soaking of crystalline silicon wafer lifetime samples surface passivated by thermal atomic layer deposited (ALD) Al2O3 is investigated in this paper. Contrary to other passivation materials used in solar cell applications (i.e., SiO2, SiNx), using thermal ALD Al2O3, an increase in effective carrier lifetime after light soaking under standard testing conditions is observed for both p-type (˜45%) and n-type (˜60%) FZ c-Si lifetime samples. After light soaking and storing the samples in a dark and dry environment, the effective lifetime decreases again and practically returns to the value before light soaking. The rate of lifetime decrease after light soaking is significantly slower than the rate of lifetime increase by light soaking. To investigate the underlying mechanism, corona charge experiments are carried out on p-type c-Si samples before and after light soaking. The results indicate that the negative fixed charge density Qf present in the Al2O3 films increases due to the light soaking, which results in an improved field-effect passivation. Numerical calculations also confirm that the improved field-effect passivation is the main contributor for the increased effective lifetime after light soaking. To further understand the light soaking phenomenon, a kinetic model—a charge trapping/de-trapping model—is proposed to explain the time dependent behavior of the lifetime increase/decrease observed under/after light soaking. The trap model fits the experimental results very well. The observed light enhanced passivation for ALD Al2O3 passivated c-Si is of technological relevance, because solar cell devices operate under illumination, thus an increase in solar cell efficiency due to light soaking can be expected.

  13. Inkjet-printed thin film radio-frequency capacitors based on sol-gel derived alumina dielectric ink

    KAUST Repository

    McKerricher, Garret

    2017-05-03

    There has been significant interest in printing radio frequency passives, however the dissipation factor of printed dielectric materials has limited the quality factor achievable. Al2O3 is one of the best and widely implemented dielectrics for RF passive electronics. The ability to spatially pattern high quality Al2O3 thin films using, for example, inkjet printing would tremendously simplify the incumbent fabrication processes – significantly reducing cost and allowing for the development of large area electronics. To-date, particle based Al2O3 inks have been explored as dielectrics, although several drawbacks including nozzle clogging and grain boundary formation in the films hinder progress. In this work, a particle free Al2O3 ink is developed and demonstrated in RF capacitors. Fluid and jetting properties are explored, along with control of ink spreading and coffee ring suppression. The liquid ink is heated to 400 °C decomposing to smooth Al2O3 films ~120 nm thick, with roughness of <2 nm. Metal-insulator-metal capacitors, show high capacitance density >450 pF/mm2, and quality factors of ~200. The devices have high break down voltages, >25 V, with extremely low leakage currents, <2×10−9 A/cm2 at 1 MV/cm. The capacitors compare well with similar Al2O3 devices fabricated by atomic layer deposition.

  14. Analysis of cyclic stress-induced fatigue in Al2O3 specimens with Knoop cracks

    International Nuclear Information System (INIS)

    Fett, T.; Munz, D.; Thun, G.; Karlsruhe Univ.

    1990-01-01

    This contribution explains the crack growth in 99.6% Al 2 O 3 specimens with Knoop cracks subject to reverse bending fatigue (R = -1). The experiments revealed a strong fatigue effect under cyclic loads. (MM) [de

  15. Physics and Technology of Transparent Ceramic Armor: Sintered Al2O3 vs Cubic Materials

    National Research Council Canada - National Science Library

    Krell, Andreas; Hutzler, Thomas; Klimke, Jens

    2006-01-01

    Sintered sub-micrometer alumina (alpha-Al2O3) is the hardest transparent armor. However, its trigonal structure gives rise to a strong thickness effect that makes thicker components translucent. Cubic ceramics (no birefringence...

  16. Selective-area growth and magnetic characterization of MnAs/AlGaAs nanoclusters on insulating Al2O3 layers crystallized on Si(111) substrates

    Science.gov (United States)

    Sakita, Shinya; Hara, Shinjiro; Elm, Matthias T.; Klar, Peter J.

    2016-01-01

    We report on selective-area metal-organic vapor phase epitaxy and magnetic characterization of coupled MnAs/AlGaAs nanoclusters formed on thin Al2O3 insulating layers crystallized on Si(111) substrates. Cross-sectional transmission electron microscopy reveals that poly-crystalline γ-Al2O3 grains are formed after an annealing treatment of the amorphous Al2O3 layers deposited by atomic layer deposition on Si(111) substrates. The ⟨111⟩ direction of the γ-Al2O3 grains tends to be oriented approximately parallel to the ⟨111⟩ direction of the Si substrate. We observe that hexagonal MnAs nanoclusters on AlGaAs buffer layers grown by selective-area metal-organic vapor phase epitaxy on partially SiO2-masked Al2O3 insulator crystallized on Si(111) substrates are oriented with the c-axis along the ⟨111⟩ direction of the substrates, but exhibit a random in-plane orientation. A likely reason is the random orientation of the poly-crystalline γ-Al2O3 grains in the Al2O3 layer plane. Magnetic force microscopy studies at room temperature reveal that arrangements of coupled MnAs nanoclusters exhibit a complex magnetic domain structure. Such arrangements of coupled MnAs nanoclusters may also show magnetic random telegraph noise, i.e., jumps between two discrete resistance levels, in a certain temperature range, which can be explained by thermally activated changes of the complex magnetic structure of the nanocluster arrangements.

  17. Controlled synthesis of α-Al2O3 via the hydrothermal-pyrolysis method

    Science.gov (United States)

    Li, Zhao; Wu, Kunyao; Cao, Jing; Wang, Yongfeng

    2017-06-01

    Taking aluminum sulfate and urea as the raw materials produce α-Al2O3 by employing the hydrothermal-pyrolysis method. The study analyzes the characterization of the products by XRD and SEM, The results indicate as follows: after 6 hours’ hydrothermal reaction in the 120°C water, with the aluminum sulfate and urea as the raw materials, spherical α-Al2O3 can be obtained through calcination at 1200°C.

  18. Pressure influenced combustion synthesis of γ- and α-Al2O3 nanocrystalline powders

    International Nuclear Information System (INIS)

    Ozuna, O; Hirata, G A; McKittrick, J

    2004-01-01

    Aluminium oxide nanocrystals have been prepared via a straightforward reaction, initiated at low temperatures ( 2 O 3 ) of these powders. The fibre-like morphology obtained for the as-synthesized γ-Al 2 O 3 permits the synthesis of nanocrystalline α-Al 2 O 3 (∼ 55 nm) even after a high temperature treatment at 1200 deg. C. The findings suggest a promising approach for controlling the size and crystal phase of the particles

  19. Synthesis of Al2O3-Coated Fe3O4 Nanoparticles for Thermomagnetic Processing

    Science.gov (United States)

    2015-12-01

    Scripta Materialia. 2004;51:171–174. 9. Radhakrishnan B, Nicholson DM, Eisenbach M, Parish C, Ludtka GM, Rios O. Alignment of iron nanoparticles in a...ARL-TN-0720 ● DEC 2015 US Army Research Laboratory Synthesis of Al2O3-Coated Fe3O4 Nanoparticles for Thermomagnetic Processing...Laboratory Synthesis of Al2O3-Coated Fe3O4 Nanoparticles for Thermomagnetic Processing by Victoria L Blair Weapons and Materials Research

  20. Thin film Encapsulations of Flexible Organic Light Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Tsai Fa-Ta

    2016-01-01

    Full Text Available Various encapsulated films for flexible organic light emitting diodes (OLEDs were studied in this work, where gas barrier layers including inorganic Al2O3 thin films prepared by atomic layer deposition, organic Parylene C thin films prepared by chemical vapor deposition, and their combination were considered. The transmittance and water vapor transmission rate of the various organic and inorgabic encapsulated films were tested. The effects of the encapsulated films on the luminance and current density of the OLEDs were discussed, and the life time experiments of the OLEDs with these encapsulated films were also conducted. The results showed that the transmittance are acceptable even the PET substrate were coated two Al2O3 and Parylene C layers. The results also indicated the WVTR of the PET substrate improved by coating the barrier layers. In the encapsulation performance, it indicates the OLED with Al2O3 /PET, 1 pair/PET, and 2 pairs/PET presents similarly higher luminance than the other two cases. Although the 1 pair/PET encapsulation behaves a litter better luminance than the 2 pairs/PET encapsulation, the 2 pairs/PET encapsulation has much better life time. The OLED with 2 pairs/PET encapsulation behaves near double life time to the 1 pair encapsulation, and four times to none encapsulation.

  1. Characterization of γ- Al2O3 nanopowders synthesized by Co-precipitation method

    International Nuclear Information System (INIS)

    Jbara, Ahmed S.; Othaman, Zulkafli; Ati, Ali A.; Saeed, M.A.

    2017-01-01

    Co-precipitation technique has been used to synthesize gamma-Al 2 O 3 (γ-Al 2 O 3 ) nanopowders under annealing temperature effect. The crystalline phase and purity for the prepared powder were characterized by different spectroscopy techniques. XRD analysis confirms the gamma phase of alumina nanopowders with particle diameter ranging from 6 to 24 nm, which confirms the quantum dots formation, which is also supported by the BET measurement. The surface area of the prepared nanopowders is in the range of 109–367 m 2 /g. Morphology analysis indicates that γ-Al 2 O 3 nanopowders are consisted of grains almost spherical in shape. Some agglomeration of nanoparticles occurs, which become more regular hexagonal shaped with the increasing annealing temperature. The small nanoparticles size and the high surface area from a simple procedure for preparing γ-Al 2 O 3 may make it more suitable for use as an adsorbent for malachite green. - Highlights: • Co-precipitation technique is used to synthesize gamma- Al 2 O 3 nanopowders. • Pure gamma- Al 2 O 3 phase was obtained having maximum nanoparticle size is 24 nm. • The quantum dots were formed inside powder. • High surface area of nanopowders at the low annealing temperature. • Increasing annealing temperature causes the hexagonal agglomeration shape.

  2. Synthesis, characterization and thermal properties of paraffin microcapsules modified with nano-Al2O3

    International Nuclear Information System (INIS)

    Jiang, Xiang; Luo, Ruilian; Peng, Feifei; Fang, Yutang; Akiyama, Tomohiro; Wang, Shuangfeng

    2015-01-01

    Highlights: • Novel MEPCM modified with nano-Al 2 O 3 was prepared via emulsion polymerization. • The paraffin microcapsules presented a well-defined microstructure. • The composite achieved high encapsulation efficiency. • The thermal conductivity of MEPCM was enhanced due to the nano-Al 2 O 3 particles. - Abstract: A sort of new microencapsulated phase change materials (MEPCM) based on paraffin wax core and poly(methyl methacrylate-co-methyl acrylate) shell with nano alumina (nano-Al 2 O 3 ) inlay was synthesized through emulsion polymerization. Various techniques were used to characterize the as-prepared products so as to investigate the effect of nano-Al 2 O 3 on morphology and thermal performance, including scanning electron microscopy (SEM), differential scanning calorimetry (DSC), thermogravimetric analysis (TGA) and thermal conductivity measurement. The results showed that the products achieved the best performance with 16% (monomer mass) nano-Al 2 O 3 added under the optimal preparation conditions. The DSC results indicated that the phase change temperature of the composite exhibited appropriate phase change temperature and achieved high encapsulation efficiency. The thermal conductivity of the paraffin microcapsules is also significantly improved owing to the presence of high thermal conductive nano-Al 2 O 3 . This synthetic technique can be a perspective way to prepare the MEPCM with enhanced thermal transfer and phase change properties for potential applications to energy-saving building materials

  3. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

  4. Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

  5. Optical properties of aluminum oxide thin films and colloidal nanostructures

    International Nuclear Information System (INIS)

    Koushki, E.; Mousavi, S.H.; Jafari Mohammadi, S.A.; Majles Ara, M.H.; Oliveira, P.W. de

    2015-01-01

    In this work, we prepared thin films of aluminum oxide (Al 2 O 3 ) with different thicknesses, using a wet chemical process. The Al 2 O 3 nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  6. Pinning enhancement in MgB2 superconducting thin films by ...

    Indian Academy of Sciences (India)

    The magnetic field dependence of the critical current density Jc was calculated from the M–H loops and magnetic field dependence of ... MgB2 thin film; Fe2O3 nanoparticles; critical current density; r-plane Al2O3 substrate. 1. Introduction. The discovery of ... It was thought that from these cal- culations, one can choose an ...

  7. Sensitivity enhancement of metal oxide thin film transistor with back gate biasing

    NARCIS (Netherlands)

    Dam, V.A.T.; Blauw, M.A.; Brongersma, S.H.; Crego-Calama, M.

    2011-01-01

    In this work, a room-temperature sensing device for detecting carbon monoxide using a ZnO thin film is presented. The ZnO layer (thickness close to the Debye length), which has a polycrystalline structure, is deposited with atomic-layer deposition (ALD) on an Al2O3/Si substrate. The operating

  8. Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure

    Science.gov (United States)

    Liu, Jian; Yang, Huafeng; Ma, Zhongyuan; Chen, Kunji; Zhang, Xinxin; Huang, Xinfan; Oda, Shunri

    2018-01-01

    We reported an Al2O3/HfO2/Al2O3 sandwich structure resistive switching device with significant improvement of multilevel cell (MLC) operation capability, which exhibited that four stable and distinct resistance states (one low resistance state and three high resistance states) can be achieved by controlling the Reset stop voltages (V Reset-stop) during the Reset operation. The improved MLC operation capability can be attributed to the R HRS/R LRS ratio enhancement resulting from increasing of the series resistance and decreasing of leakage current by inserting two Al2O3 layers. For the high-speed switching applications, we studied the initial switching dynamics by using the measurements of the pulse width and amplitude dependence of Set and Reset switching characteristics. The results showed that under the same pulse amplitude conditions, the initial Set progress is faster than the initial Reset progress, which can be explained by thermal-assisted electric field induced rupture model in the oxygen vacancies conductive filament. Thus, proper combination of varying pulse amplitude and width can help us to optimize the device operation parameters. Moreover, the device demonstrated ultrafast program/erase speed (10 ns) and good pulse switching endurance (105 cycles) characteristics, which are suitable for high-density and fast-speed nonvolatile memory applications.

  9. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.

    Science.gov (United States)

    Wang, Lai-Guo; Qian, Xu; Cao, Yan-Qiang; Cao, Zheng-Yi; Fang, Guo-Yong; Li, Ai-Dong; Wu, Di

    2015-01-01

    We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3/HfO2/Al2O3 after 600°C post-annealing. The memory units of Pt/Al2O3/HfO2/Al2O3/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10(3) cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed. The trilayer structure device units of Al2O3/HfO2/Al2O3 on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory.

  10. Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al2O3 interlayer

    Directory of Open Access Journals (Sweden)

    Xing Wang

    2016-06-01

    Full Text Available A thin Al2O3 interlayer deposited between La2O3 layer and Si substrate was used to scavenge the interfacial layer (IL by blocking the out-diffusion of substrate Si. Some advantages and disadvantages of this method were discussed in detail. Evident IL reduction corroborated by the transmission electron microscopy results suggested the feasibility of this method in IL scavenging. Significant improvements in oxygen vacancy and leakage current characteristics were achieved as the thickness of Al2O3 interlayer increase. Meanwhile, some disadvantages such as the degradations in interface trap and oxide trapped charge characteristics were also observed.

  11. Al2 O3 Underlayer Prepared by Atomic Layer Deposition for Efficient Perovskite Solar Cells.

    Science.gov (United States)

    Zhang, Jinbao; Hultqvist, Adam; Zhang, Tian; Jiang, Liangcong; Ruan, Changqing; Yang, Li; Cheng, Yibing; Edoff, Marika; Johansson, Erik M J

    2017-10-09

    Perovskite solar cells, as an emergent technology for solar energy conversion, have attracted much attention in the solar cell community by demonstrating impressive enhancement in power conversion efficiencies. However, the high temperature and manually processed TiO 2 underlayer prepared by spray pyrolysis significantly limit the large-scale application and device reproducibility of perovskite solar cells. In this study, lowtemperature atomic layer deposition (ALD) is used to prepare a compact Al 2 O 3 underlayer for perovskite solar cells. The thickness of the Al 2 O 3 layer can be controlled well by adjusting the deposition cycles during the ALD process. An optimal Al 2 O 3 layer effectively blocks electron recombination at the perovskite/fluorine-doped tin oxide interface and sufficiently transports electrons through tunneling. Perovskite solar cells fabricated with an Al 2 O 3 layer demonstrated a highest efficiency of 16.2 % for the sample with 50 ALD cycles (ca. 5 nm), which is a significant improvement over underlayer-free PSCs, which have a maximum efficiency of 11.0 %. Detailed characterization confirms that the thickness of the Al 2 O 3 underlayer significantly influences the charge transfer resistance and electron recombination processes in the devices. Furthermore, this work shows the feasibility of using a high band-gap semiconductor such as Al 2 O 3 as the underlayer in perovskite solar cells and opens up pathways to use ALD Al 2 O 3 underlayers for flexible solar cells. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. A comparison of BCF-12 organic scintillators and Al2O3:C crystals for real-time medical dosimetry

    DEFF Research Database (Denmark)

    Beierholm, Anders Ravnsborg; Andersen, Claus Erik; Lindvold, Lars

    2008-01-01

    Radioluminescence (RL) from aluminium oxide (Al2O3:C) crystals and organic scintillators such as the blue-emitting BCF-12 can be used for precise real-time dose rate measurements during radiation therapy of cancer patients. Attaching the dosimeters to thin light-guiding fiber cables enables in vivo...... can be circumvented for pulsed beams due to the long life-time of the main luminescence center. In contrast, chromatic removal seems to be the most effective method for organic scintillators, but is found to yield some experimental complexities. In this paper, we report on dose rate measurements using...

  13. Atmospheric deposition process for enhanced hybrid organic-inorganic multilayer barrier thin films for surface protection

    Science.gov (United States)

    Rehman, Mohammad Mutee ur; Kim, Kwang Tae; Na, Kyoung Hoan; Choi, Kyung Hyun

    2017-11-01

    In this study, organic polymer poly-vinyl acetate (PVA) and inorganic aluminum oxide (Al2O3) have been used together to fabricate a hybrid barrier thin film for the protection of PET substrate. The organic thin films of PVA were developed through roll to roll electrohydrodynamic atomization (R2R-EHDA) whereas the inorganic thin films of Al2O3 were grown by roll to roll spatial atmospheric atomic layer deposition (R2R-SAALD) for mass production. The use of these two technologies together to develop a multilayer hybrid organic-inorganic barrier thin films under atmospheric conditions is reported for the first time. These multilayer hybrid barrier thin films are fabricated on flexible PET substrate. Each layer of Al2O3 and PVA in barrier thin film exhibited excellent morphological, chemical and optical properties. Extremely uniform and atomically thin films of Al2O3 with average arithmetic roughness (Ra) of 1.64 nm and 1.94 nm respectively concealed the non-uniformity and irregularities in PVA thin films with Ra of 2.9 nm and 3.6 nm respectively. The optical transmittance of each layer was ∼ 80-90% while the water vapor transmission rate (WVTR) of hybrid barrier was in the range of ∼ 2.3 × 10-2 g m-2 day-1 with a total film thickness of ∼ 200 nm. Development of such hybrid barrier thin films with mass production and low cost will allow various flexible electronic devices to operate in atmospheric conditions without degradation of their properties.

  14. Proximity effect and hot-electron diffusion in Ag/Al2O3/Al tunnel junctions

    International Nuclear Information System (INIS)

    Netel, H.; Jochum, J.; Labov, S.E.; Mears, C.A.; Frank, M.; Chow, D.; Lindeman, M.A.; Hiller, L.J.

    1997-01-01

    We have fabricated Ag/Al 2 O 3 /Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition, these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z, ultra-pure superconducting crystals. 5 refs., 8 figs

  15. Microstructure of Al2O3 nanocrystalline/cobalt-based alloy composite coatings by laser deposition

    International Nuclear Information System (INIS)

    Li Mingxi; He Yizhu; Yuan Xiaomin; Zhang Shihong

    2006-01-01

    Composite coatings, made of nano-Al 2 O 3 /cobalt-based alloy, produced by a 5-kW CO 2 laser on Ni-based superalloy were investigated. The coatings were examined to reveal their microstructure using optical microscope, scanning electron microscope, transmission electron microscope and X-ray diffraction instrument. The results showed that some equilibrium or non-equilibrium phases, such as γ-Co, Cr 23 C 6 , CoAl 2 O 4 , Al 2 O 3 and ε-Co existed in the coatings. Fine and short dendritic microstructure and columnar to equiaxed transition occurred by adding nano-Al 2 O 3 particle. With the increase of nano-materials (1%, mass fraction), fully equiaxed crystallization appeared. These were contributed to that nano-Al 2 O 3 particles acted as new nucleation site and rapid solidification of the melted pool. The results also showed inhomogeneous dispersion of nano-Al 2 O 3 that resulted in the formation of ε-Co phase in the coatings. The sub-microstructure of the clad was stacking fault. The mechanism of formation of equiaxed grains was also analyzed

  16. Mechanical and Morphological Properties of Polypropylene/Nano α-Al2O3 Composites

    Science.gov (United States)

    Mirjalili, F.; Chuah, L.; Salahi, E.

    2014-01-01

    A nanocomposite containing polypropylene (PP) and nano α-Al2O3 particles was prepared using a Haake internal mixer. Mechanical tests, such as tensile and flexural tests, showed that mechanical properties of the composite were enhanced by addition of nano α-Al2O3 particles and dispersant agent to the polymer. Tensile strength was approximately ∼16% higher than pure PP by increasing the nano α-Al2O3 loading from 1 to 4 wt% into the PP matrix. The results of flexural analysis indicated that the maximum values of flexural strength and flexural modulus for nanocomposite without dispersant were 50.5 and 1954 MPa and for nanocomposite with dispersant were 55.88 MPa and 2818 MPa, respectively. However, higher concentration of nano α-Al2O3 loading resulted in reduction of those mechanical properties that could be due to agglomeration of nano α-Al2O3 particles. Transmission and scanning electron microscopic observations of the nanocomposites also showed that fracture surface became rougher by increasing the content of filler loading from 1 to 4% wt. PMID:24688421

  17. Tribological properties of Ni-P-Al2O3 coatings

    International Nuclear Information System (INIS)

    Trzaska, M.

    1999-01-01

    The paper is aimed on experimental investigations leading to determinations of appropriate conditions for manufacturing composite chemical coatings Ni-P-Al 2 O 3 by the currentless method without or with thermal treatments. The optimal process parameters for Ni-P-Al 2 O 3 deposits on the surface of the steel St3 have been determined. The coatings Ni-P and Ni-P-Al 2 O 3 have been subjected to thermal treatments at the temperature equal to 673 K. Investigations of the structure, hardness and the abrasion wear of the composite coatings before and after thermal treatments have been performed. Influences of the particle dimensions of the dispersed phase Al 2 O 3 on the tribological properties of the resulting composite coatings have been examined. Comparison analysis of the properties of the Ni-P and Ni-P-Al 2 O 3 deposits exhibited that the dispersive phase of the aluminium oxide and the post-manufacturing thermal treatment improve importantly the resistance of the coatings on their mechanical destruction. (author)

  18. Optical properties of thin films with plasmonic effect for light scattering

    International Nuclear Information System (INIS)

    Lovchinov, K; Angelov, O; Dimova-Malinovska, D

    2012-01-01

    Thin films of Al 2 O 3 with embedded Cu and Ag nanoparticles (NPs) are deposited by r.f. co-sputtering on glass substrates. The samples are annealed at 400°C and 500°C for 3 h in forming gas (N 2 +5% H 2 ) to stimulate Cu and Ag nanoclusters' formation. Multilayer structures (stacks) such as Al 2 O 3 /Ag/Al 2 O 3 , ZnO:Al/Ag/ZnO:Al and Ag/ZnO:Al/Ag/ZnO:Al are deposited on glass substrate by consequently sputtering of the individual layers. Before deposition of the capping layers of Al 2 O 3 and ZnO:Al, the bi-layer structures are annealed in vacuum for 50 min at 220°C or 400°C in the case of glass/Al 2 O 3 /Ag, and at 220°C in the case of glass/ ZnO:Al/Ag and glass/ Ag/ZnO:Al/Ag. The diffuse and specular reflectance and transmittance spectra are measured in the spectral range of 300–1200 nm to study the plasma resonance of Cu and Ag nanoparticles. The optical properties of the films and the stack structures are discussed.

  19. Microstructural characterization of Al2O3: Eu with dosimetric purposes

    International Nuclear Information System (INIS)

    Mendoza A, D.; Espinosa P, M.E.; Gonzalez M, P.R.; Rubio, E.

    2004-01-01

    In this work a microstructural analysis is presented, through Sem, EDS and XRD, of the alumina with Europium (Al 2 O 3 : Eu) synthesized by the sol gel method. According to those obtained results, a previous thermal treatment to 1000 C to the samples, induces the formation of the γ-alumina phase for the samples that does not contain Eu; however when there is presence of this element, the θ alumina phase is obtained. Likewise, it was observed that the particle size is increased with the presence of Eu. When analyzing the thermoluminescent response (TL) induced by the gamma radiation, it was observed that the pure Al 2 O 3 presents an intense TL sign; while the Al 2 O 3 : Eu, the sign suffers a marked decrement. (Author)

  20. Multilevel resistive switching in TiO2/Al2O3 bilayers at low temperature

    Science.gov (United States)

    Andreeva, N.; Ivanov, A.; Petrov, A.

    2018-02-01

    We report an approach to design a metal-insulator-metal (MIM) structure exhibiting multilevel resistive switching. Toward this end, two oxide layers (TiO2 and Al2O3) were combined to form a bilayer structure. MIM structures demonstrate stable bipolar switching relative to the resistive state determined by the bias voltage. The resistive state of such bilayer structures can be electrically tuned over seven orders of magnitude. The resistance is determined by the concentration of oxygen vacancies in the active layer of Al2O3. To elucidate a possible mechanism for resistive switching, structural studies and measurements have been made in the temperature range 50-295 K. Resistive switching occurs over the entire temperature range, which assumes the electronic character of the process in the Al2O3 layer. The experimental results indicate that hopping transport with variable-length jumps is the most probable transport mechanism in these MIM structures.

  1. Anchorage of γ-Al2O3 nanoparticles on nitrogen-doped multiwalled carbon nanotubes

    International Nuclear Information System (INIS)

    Rodríguez-Pulido, A.; Martínez-Gutiérrez, H.; Calderon-Polania, G.A.; Lozano, M.A. Gonzalez; Cullen, D.A.; Terrones, H.; Smith, D.J.; Terrones, M.

    2016-01-01

    Nitrogen-doped multiwalled carbon nanotubes (CNx-MWNTs) have been decorated with γ-Al 2 O 3 nanoparticles by a novel method. This process involved a wet chemical approach in conjunction with thermal treatment. During the particle anchoring process, individual CNx-MWNT nanotubes agglomerated into bundles, resulting in arrays of aligned CNx-MWNT coated with γ-Al 2 O 3 . Extensive characterization of the resulting γ-Al 2 O 3 /CNx-MWNT bundles was performed using a range of electron microscopy imaging and microanalytical techniques. A possible mechanism explaining the nanobundle alignment is described, and possible applications of these materials for the fabrication of ceramic composites using CNx-MWNTs are briefly discussed.

  2. Characterization of Al2O3-Co ceramic composite obtained by high energy mill

    International Nuclear Information System (INIS)

    Souza, J.L.; Assis, R.B. de; Carlos, E.M.; Oliveira, T.P.; Costa, F.A. da

    2014-01-01

    This work aims to characterize the ceramic composite Al 2 O3-Co obtained by high energy grinding. The composites were obtained by milling Al 2 O 3 and Co in a high energy mill at a speed of 400 rpm, in proportions of 5 to 20% Cobalt (Co). Ceramic composites with 5 and 20% cobalt were sintered at 1200 and 1300 ° C, with a 60-minute plateau and a heating rate of 10 ° C / min. The samples were characterized by X-ray diffraction (XRD), thermogravimetry and differential scanning calorimetry (TG / DSC) and scanning electron microscopy (SEM). The results show the significant effect of cobalt percentage and high energy grinding on the final properties of the Al 2 O 3 - Co ceramic composite, presenting satisfactory values for the composite with a 20% cobalt percentage, showing to be a promising material for application in cutting tools

  3. Characterization of thermoluminescent response of Al2O3:Tm/Teflon for gamma rays dosimetry

    International Nuclear Information System (INIS)

    Carvalho Junior, Alvaro B. de; Barros, Vinicius S.M. de; Elihimas, Diego Rafael M.; Khoury, Helen J.; Azevedo, Walter M. de

    2011-01-01

    In this work, α-Al 2 O 3 doped with Tm 3+ was prepared by combustion synthesis techniques for thermoluminescent (TL) ionizing radiation dosimetry applications. After this, Al 2 O 3 :Tm (0.1%) pellets were manufactured from a 2:1 homogeneous mixture of Al 2 O 3 :Tm (0.1%) and powdered Teflon (PTFE). Ten pellets were used to characterize the dosimetric properties. The dosimetric characterization was performed by analyses of the reproducibility, sensitivity of the TL response vs. dose between 1 and 10 Gy to 60 Co source and fading. The results showed a glow curve with a peak near to 225 deg C, a linear TL response with the gamma radiation dose in the range investigated and a reproducibility < 10%. These results indicate a potential use of these pellets for gamma radiation dosimetry. (author)

  4. Synthesis of Beta-Al2O3 Solid Electrolytes by Glycine-nitrate Combustion

    Directory of Open Access Journals (Sweden)

    ZHU Cheng-fei

    2016-08-01

    Full Text Available Beta-Al2O3 precursor powders were synthesized by glycine-nitrate combustion at a low temperature using metal nitrate and GNP as raw materials. The thermal decomposition mechanism of the gel and the formation process of beta-Al2O3 were investigated by XRD, TG/DSC, SEM, NMR and EIS. The results show that beta-Al2O3 precursor powder with the average size of 42.0nm can be obtained at 1150℃, 150℃ lower than the solid state reaction. The precursor powder has good forming and sintering performance. The sample is calcined at 1620℃, then the Al(Ⅳ and the Al(Ⅵ in the structure of the sample is around δ=45 and δ=-6, respectively. The relative density of the sample is 97.6%. The ionic conductivity at 350℃ is 0.046S·cm-1.

  5. Synthesis of Mg–Al2O3 nanocomposites by mechanical alloying

    International Nuclear Information System (INIS)

    Liu, Jinling; Suryanarayana, C.; Ghosh, Dipankar; Subhash, Ghatu; An, Linan

    2013-01-01

    Highlights: ► Mg nanocomposites were synthesized by high-energy ball milling. ► A uniform distribution of the nano-sized reinforcements in the matrix was successfully obtained. ► The thermal stability of the formed nanocomposite was evaluated by annealing it at a high temperature. ► A reaction occurred between the initial Mg powder and Al formed as a result of the displacement reaction, leading to the formation of Mg 17 Al 12 , Al 0.58 Mg 0.42 , and Al 3 Mg 2 phases. -- Abstract: Mg–Al 2 O 3 nanocomposite powders, with Al 2 O 3 particles of 50 nm size, were synthesized by mechanical alloying starting from a mixture of 70 vol.% pure Mg and 30 vol.% Al 2 O 3 powders. A steady-state condition was obtained on milling the powder mix for about 20 h, when the crystallite size of the Mg powder was about 10 nm. The structural evolution during milling was monitored using scanning electron microscopy, energy dispersive spectrometry, and X-ray diffraction methods. The results showed that a mixture of Mg, Al 2 O 3 , and MgO phases were obtained on mechanical alloying. On annealing the milled powders at 600 °C for 30 min, a displacement reaction occurred between the Mg and Al 2 O 3 phases, when the formation of a mixture of pure Al and MgO phases was observed. Also, a reaction occurred between the initial Mg powder and Al formed as a result of the displacement reaction, leading to the formation of Mg 17 Al 12 , Al 0.58 Mg 0.42 , and Al 3 Mg 2 phases. Thus, the powder annealed after milling the Mg + Al 2 O 3 powder mix for 25 h consisted of Al, MgO and Al 3 Mg 2 phases

  6. Mechanism for converting Al2O3-containing borate glass to hydroxyapatite in aqueous phosphate solution.

    Science.gov (United States)

    Zhao, Di; Huang, Wenhai; Rahaman, Mohamed N; Day, Delbert E; Wang, Deping

    2009-05-01

    The effect of replacing varying amounts (0-2.5 mol.%) of B2O3 with Al2O3 in a borate glass on (1) the conversion of the glass to HA in an aqueous phosphate solution and (2) the compressive strength of the as-formed HA product was investigated. Samples of each glass (10 x 10 x 8 mm) were placed in 0.25 M K2HPO4 solution at 60 degrees C, and the conversion kinetics to HA were determined from the weight loss of the glass and the pH of the solution. The structure and composition of the solid reaction products were characterized using X-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. While the conversion rate of the glass to HA decreased considerably with increasing Al2O3 content, the microstructure of the HA product became denser and the compressive strength of the HA product increased. The addition of SiO2 to the Al2O3-containing borate glass reversed the deterioration of the conversion rate, and produced a further improvement in the strength of the HA product. The compressive strength of the HA formed from the borate glass with 2.5 mol.% Al2O3 and 5 mol.% SiO2 was 11.1 +/- 0.2 MPa, which is equal to the highest strengths reported for trabecular bone. The results indicated that simultaneous additions of Al2O3 and SiO2 could be used to control the bioactivity of the borate glass and to enhance the mechanical strength of the HA product. Furthermore, the HA product formed from the glass containing both SiO2 and Al2O3 could be applied to bone repair.

  7. Effect of Al2O3 and TiO2 nanoparticles on aquatic organisms

    International Nuclear Information System (INIS)

    Gosteva, I; Morgalev, Yu; Morgaleva, T; Morgalev, S

    2015-01-01

    Environmental toxicity of aqueous disperse systems of nanoparticles of binary compounds of titanium dioxides (with particle size Δ 50 =5 nm, Δ 50 =50 nm, Δ 50 =90 nm), aluminum oxide alpha-forms (Δ 50 =7 nm and Δ 50 =70 nm) and macro forms (TiO 2 Δ 50 =350 nm, Al 2 O 3 A 50 =4000 nm) were studied using biological testing methods. The bioassay was performed using a set of test organisms representing the major trophic levels. We found the dependence of the toxic effect concentration degree of nTiO 2 and nAl 2 O 3 on the fluorescence of the bacterial biosensor 'Ekolyum', the chemotactic response of ciliates Paramecium caudatum, the growth of unicellular algae Chlorella vulgaris Beijer and mortality of entomostracans Daphnia magna Straus. We revealed the selective dependence of nTiO 2 and nAl 2 O 3 toxicity on the size, concentration and chemical nature of nanoparticles. The minimal concentration causing an organism's response on nTiO 2 and nAl 2 O 3 effect depends on the type of the test- organism and the test reaction under study. We specified L(E)C 50 and acute toxicity categories for all the studied nanoparticles. We determined that nTiO 2 (Δ 50 =5 nm) belong to the category «Acute toxicity 1», nTiO 2 (A 50 =90 nm) and nAl 2 O 3 (Δ 50 =70 nm) – to the category «Acute toxicity 2», nAl 2 O 3 (Δ 50 =7 nm) – to the category «Acute toxicity 3». No acute toxicity was registered for nTiO 2 (Δ 50 =50 nm) and macro form TiO 2 . (paper)

  8. Effect of AL2O3 and TiO2 nanoparticles on aquatic organisms

    Science.gov (United States)

    Gosteva, I.; Morgalev, Yu; Morgaleva, T.; Morgalev, S.

    2015-11-01

    Environmental toxicity of aqueous disperse systems of nanoparticles of binary compounds of titanium dioxides (with particle size Δ50=5 nm, Δ50=50 nm, Δ50=90 nm), aluminum oxide alpha-forms (Δ50=7 nm and Δ50=70 nm) and macro forms (TiO2 Δ50=350 nm, Al2O3 A50=4000 nm) were studied using biological testing methods. The bioassay was performed using a set of test organisms representing the major trophic levels. We found the dependence of the toxic effect concentration degree of nTiO2 and nAl2O3 on the fluorescence of the bacterial biosensor "Ekolyum", the chemotactic response of ciliates Paramecium caudatum, the growth of unicellular algae Chlorella vulgaris Beijer and mortality of entomostracans Daphnia magna Straus. We revealed the selective dependence of nTiO2 and nAl2O3 toxicity on the size, concentration and chemical nature of nanoparticles. The minimal concentration causing an organism's response on nTiO2 and nAl2O3 effect depends on the type of the test- organism and the test reaction under study. We specified L(E)C50 and acute toxicity categories for all the studied nanoparticles. We determined that nTiO2 (Δ50=5 nm) belong to the category «Acute toxicity 1», nTiO2 (A50=90 nm) and nAl2O3 (Δ50=70 nm) - to the category «Acute toxicity 2», nAl2O3 (Δ50=7 nm) - to the category «Acute toxicity 3». No acute toxicity was registered for nTiO2 (Δ50=50 nm) and macro form TiO2.

  9. The Evolution of Al2O3 Content in Ancient Chinese Glasses

    Directory of Open Access Journals (Sweden)

    Wang Cheng-yu

    2016-01-01

    Full Text Available Based on the evidence from museums, collectors, the dug out of the grave, the evolution of Al2O3 content in Chinese glasses from Western Zhou to Qing dynasty was documented in this paper in detail. It was found that Al2O3 contents in ancient Chinese glasses were relatively higher than those of outside of China in the world. This is the character of the ancient Chinese glasses which is caused by not only the high Al contents in the raw materials but also by the Chinese people’s preference of the milky glasses similar to jade

  10. Narrow in-gap states in doped Al2O3

    KAUST Repository

    Casas-Cabanas, Montse

    2011-10-01

    Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. © 2011 Elsevier B.V. All rights reserved.

  11. Co2+ adsorption in porous oxides Mg O, Al2O3 and Zn O

    International Nuclear Information System (INIS)

    Moreno M, J. E.; Granados C, F.; Bulbulian, S.

    2009-01-01

    The porous oxides Mg O, Al 2 O 3 and Zn O were synthesized by the chemical combustion in solution method and characterized be means of scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction. The adsorption behavior of Co 2+ ions present in aqueous solution were studied on the synthesized materials by means of experiments lots type to ambient temperature. It was found that the cobalt ions removal was of 90% in Mg O, 65% in Zn O and 72% in Al 2 O 3 respectively, indicating that the magnesium oxide is the best material to remove Co 2+ presents in aqueous solution. (Author)

  12. CO2 Hydrogenation over Ru/χ-Al2O3 Catalyst

    Science.gov (United States)

    Jeenjumras, Kanyanat; Piticharoenphun, Sunthon; Mekasuwandumrong, Okorn

    2018-02-01

    The hydrogenation of CO2 was investigated over Ru/χ-Al2O3 catalyst prepared by thermal decomposition of gibbsite which was followed with impregnation using different types of ruthenium precursors. The performance of the catalysts was examined by the temperature programmed reaction of CO2 with H2. The Ru/χ-Al2O3 catalyst prepared using ruthenium (III) nitrosyl nitrate solution as the Ru source (RNN) exhibited the best performance, compared to other Ru precursors. The physiochemical properties of each catalyst were characterized using XRD diffraction, N2 physisorption and H2 chemisorption.

  13. Low Leakage Superconducting Tunnel Junctions with a Single Crystal Al2O3 Barrier

    Science.gov (United States)

    2016-03-30

    three layers were grown in situ in an ultra high vacuum (UHV) system with a nominal base pressure of ~1×10-10 Torr. First, a 120~150 nm thick...current-voltage (I-V) curves of a typical single-crystal Al2O3 tunnel junction taken at ~80 mK . One way to quantify the junction quality is to define a...80 mK on an epi-Re/epi-Al2O3/poly-Al tunnel junction. (a) Linear vertical scale. (b) Logarithmic vertical scale: absolute value is used. This

  14. Preparation of ZnO-Al2O3 Particles in a Premixed Flame

    DEFF Research Database (Denmark)

    Jensen, Joakim Reimer; Johannessen, Tue; Wedel, Stig

    2000-01-01

    Zinc oxide (ZnO) and alumina (Al2O3) particles are synthesized by the combustion of their volatilized acetylacetonate precursors in a premixed air-methane flame reactor. The particles are characterized by XRD, transmission electron microscopy, scanning mobility particle sizing and by measurement...... temperature and a decreasing precursor vapour pressure. The combustion of precursor mixtures leads to composite particles consisting of zinc aluminate ZnAl2O4 intermixed with either ZnO or Al2O3 phases. The zinc aluminate particles are dendritic aggregates, resembling the alumina particles, and are evidently...

  15. Reduction of Al2O3 in niobium--lithium systems at 10000C

    International Nuclear Information System (INIS)

    Selle, J.E.; DeVan, J.H.

    1977-07-01

    Various grades of aluminum oxide (Al 2 O 3 ) were sealed inside capsules of niobium and niobium-1% zirconium alloy which were then exposed to liquid lithium for 3000 hr at 1000 0 C. Similar unsealed capsules were exposed to a high vacuum. Reduction of the Al 2 O 3 occurred in the lithium-treated capsules, but no reaction occurred in the vacuum-treated capsules. Metallography and electron-microprobe analysis showed that reaction products in the form of compounds of niobium, aluminum, and zirconium were formed. Lithium acted as a sink for oxygen

  16. Detection of fast neutrons with LiF and Al2O3 scintillating bolometers

    International Nuclear Information System (INIS)

    Coron, N; Gironnet, J; Leblanc, J; Marcillac, P de; Redon, T; Torres, L; Cuesta, C; Domange, J; Garcia, E; Martinez, M; Ortigoza, Y; Ortiz de Solorzano, A; Pobes, C; Puimedon, J; Rolon, T; Sarsa, M L; Villar, J A

    2010-01-01

    Scintillating bolometers of LiF and Al 2 O 3 can monitor the fast neutrons flux in WIMPs searches. With both materials we merge the traditional fast neutron detection methods of induced reactions and scattering. The ROSEBUD collaboration devoted an underground run in the old Canfranc laboratory to study the response of LiF and Al 2 O 3 to fast neutrons from 252 Cf. Both bolometers were used simultaneously in a common experimental set-up resembling those of current WIMPs searches, which could give valuable insights into future WIMPs searches with cryogenic detectors as EURECA.

  17. SrZnO nanostructures grown on templated Al2O3 substrates by pulsed laser deposition

    Science.gov (United States)

    Labis, Joselito P.; Alanazi, Anwar Q.; Albrithen, Hamad A.; El-Toni, Ahmed Mohamed; Hezam, Mahmoud; Elafifi, Hussein Elsayed; Abaza, Osama M.

    2017-09-01

    The parameters of pulsed laser deposition (PLD) have been optimized to design different nanostructures of Strontium-alloyed zinc oxide (SrZnO). In this work, SrZnO nanostructures are grown on Al2O3 substrates via two-step templating/seeding approach. In the temperature range between 300 - 750 oC and O2 background pressures between 0.01 and 10 Torr, the growth conditions have been tailored to grow unique pointed leaf-like- and pitted olive-like nanostructures. Prior to the growth of the nanostructures, a thin SrZnO layer that serves as seed layer/template is first deposited on the Al2O3 substrates at ˜300oC and background oxygen pressure of 10 mTorr. The optical properties of the nanostructures were examined by UV/Vis spectroscopy and photoluminescence (PL), while the structures/morphologies were examined by SEM, TEM, and XRD. The alloyed SrZnO nanostructures, grown by ablating ZnO targets with 5, 10, 25% SrO contents, have in common a single-crystal hexagonal nanostructure with (0002) preferential orientation and have shown remarkable changes in the morphological and optical properties of the materials. To date, this is the only reported work on optimization of laser ablation parameters to design novel SrZnO nanostructures in the 5-25% alloying range, as most related Sr-doped ZnO studies were done below 7% doping. Although the physical properties of ZnO are modified via Sr doping, the mechanism remains unclear. The PLD-grown SrZnO nanostructures were directly grown onto the Al2O3 substrates; thus making these nanomaterials very promising for potential applications in biosensors, love-wave filters, solar cells, and ultrasonic oscillators.

  18. SrZnO nanostructures grown on templated Al2O3 substrates by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    Joselito P. Labis

    2017-09-01

    Full Text Available The parameters of pulsed laser deposition (PLD have been optimized to design different nanostructures of Strontium-alloyed zinc oxide (SrZnO. In this work, SrZnO nanostructures are grown on Al2O3 substrates via two-step templating/seeding approach. In the temperature range between 300 - 750 oC and O2 background pressures between 0.01 and 10 Torr, the growth conditions have been tailored to grow unique pointed leaf-like- and pitted olive-like nanostructures. Prior to the growth of the nanostructures, a thin SrZnO layer that serves as seed layer/template is first deposited on the Al2O3 substrates at ∼300oC and background oxygen pressure of 10 mTorr. The optical properties of the nanostructures were examined by UV/Vis spectroscopy and photoluminescence (PL, while the structures/morphologies were examined by SEM, TEM, and XRD. The alloyed SrZnO nanostructures, grown by ablating ZnO targets with 5, 10, 25% SrO contents, have in common a single-crystal hexagonal nanostructure with (0002 preferential orientation and have shown remarkable changes in the morphological and optical properties of the materials. To date, this is the only reported work on optimization of laser ablation parameters to design novel SrZnO nanostructures in the 5-25% alloying range, as most related Sr-doped ZnO studies were done below 7% doping. Although the physical properties of ZnO are modified via Sr doping, the mechanism remains unclear. The PLD-grown SrZnO nanostructures were directly grown onto the Al2O3 substrates; thus making these nanomaterials very promising for potential applications in biosensors, love-wave filters, solar cells, and ultrasonic oscillators.

  19. The Influence of Al2O3 Powder Morphology on the Properties of Cu-Al2O3 Composites Designed for Functionally Graded Materials (FGM)

    Science.gov (United States)

    Strojny-Nędza, Agata; Pietrzak, Katarzyna; Węglewski, Witold

    2016-08-01

    In order to meet the requirements of an increased efficiency applying to modern devices and in more general terms science and technology, it is necessary to develop new materials. Combining various types of materials (such as metals and ceramics) and developing composite materials seem to be suitable solutions. One of the most interesting materials includes Cu-Al2O3 composite and gradient materials (FGMs). Due to their potential properties, copper-alumina composites could be used in aerospace industry as rocket thrusters and components in aircraft engines. The main challenge posed by copper matrix composites reinforced by aluminum oxide particles is obtaining the uniform structure with no residual porosity (existing within the area of the ceramic phase). In the present paper, Cu-Al2O3 composites (also in a gradient form) with 1, 3, and 5 vol.% of aluminum oxide were fabricated by the hot pressing and spark plasma sintering methods. Two forms of aluminum oxide (αAl2O3 powder and electrocorundum) were used as a reinforcement. Microstructural investigations revealed that near fully dense materials with low porosity and a clear interface between the metal matrix and ceramics were obtained in the case of the SPS method. In this paper, the properties (mechanical, thermal, and tribological) of composite materials were also collected and compared. Technological tests were preceded by finite element method analyses of thermal stresses generated in the gradient structure, and additionally, the role of porosity in the formation process of composite properties was modeled. Based on the said modeling, technological conditions for obtaining FGMs were proposed.

  20. Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC

    Science.gov (United States)

    Suvanam, Sethu Saveda; Usman, Muhammed; Martin, David; Yazdi, Milad. G.; Linnarsson, Margareta; Tempez, Agnès; Götelid, Mats; Hallén, Anders

    2018-03-01

    In this paper we demonstrate a process optimization of atomic layer deposited Al2O3 on 4H-SiC resulting in an improved interface and electrical properties. For this purpose the samples have been treated with two pre deposition surface cleaning processes, namely CP1 and CP2. The former is a typical surface cleaning procedure used in SiC processing while the latter have an additional weak RCA1 cleaning step. In addition to the cleaning and deposition, the effects of post dielectric annealing (PDA) at various temperatures in N2O ambient have been investigated. Analyses by scanning electron microscopy show the presence of structural defects on the Al2O3 surface after annealing at 500 and 800 °C. These defects disappear after annealing at 1100 °C, possibly due to densification of the Al2O3 film. Interface analyses have been performed using X-ray photoelectron spectroscopy (XPS) and time-of-flight medium energy ion scattering (ToF MEIS). Both these measurements show the formation of an interfacial SiOx (0 < x < 2) layer for both the CP1 and CP2, displaying an increased thickness for higher temperatures. Furthermore, the quality of the sub-oxide interfacial layer was found to depend on the pre deposition cleaning. In conclusion, an improved interface with better electrical properties is shown for the CP2 sample annealed at 1100 °C, resulting in lower oxide charges, strongly reduced flatband voltage and leakage current, as well as higher breakdown voltage.

  1. Preparation and Characterization of PVC-Al2O3-LiClO4 Composite Polymeric Electrolyte

    International Nuclear Information System (INIS)

    Azizan Ahmad; Mohd Yusri Abdul Rahman; Siti Aminah Mohd Noor; Mohd Reduan Abu Bakar

    2009-01-01

    Ionic conductivity of composite polymer electrolyte PVC-Al 2 O 3 -LiClO 4 as a function of Al 2 O 3 concentration has been studied. The electrolyte samples were prepared by solution casting technique. Their ionic conductivity was measured using impedance spectroscopy technique. It was observed that the conductivity of the electrolyte varies with Al 2 O 3 concentration. The highest room temperature conductivity of the electrolyte of 3.43 x 10 -10 S.cm -1 was obtain at 25 % by weight of Al 2 O 3 and that without Al 2 O 3 filler was found to be 2.43 x 10 -11 S.cm -1 . The glass transition temperature decreases with the increase of Al 2 O 3 percentage due to the increasing amorphous state, meanwhile the degradation temperature increases with the increase of Al 2 O 3 percentage. Both of these thermal properties influence the enhancement of the conductivity value. The morphology of the samples shows the even distribution of the Al 2 O 3 filler in the samples. However, the filler starts to agglomerate in the sample when high percentage of Al 2 O 3 is being used. In conclusion, the addition of Al 2 O 3 filler improves the ionic conductivity of PVC- Al 2 O 3 -LiCIO 4 solid polymer electrolyte. (author)

  2. Operando Raman spectroscopy study on the deactivation of Pt/Al2O3 and Pt-Sn/Al2O3 propane dehydrogenation catalysts.

    Science.gov (United States)

    Sattler, Jesper J H B; Beale, Andrew M; Weckhuysen, Bert M

    2013-08-07

    The deactivation of 0.5 wt% Pt/Al2O3 and 0.5 wt% Pt-1.5 wt% Sn/Al2O3 catalysts has been studied by operando Raman spectroscopy during the dehydrogenation of propane and subsequent regeneration in air for 10 successive dehydrogenation-regeneration cycles. Furthermore, the reaction feed was altered by using different propane/propene/hydrogen ratios. It was found that the addition of hydrogen to the feed increases the catalyst performance and decreases the formation of coke deposits, as was revealed by thermogravimetrical analysis. The positive effect of hydrogen on the catalyst performance is comparable to the addition of Sn, a promoter element which increases both the propane conversion and propene selectivity. Operando Raman spectroscopy showed that hydrogen altered the nature of the coke deposits formed during propane dehydrogenation. Due to this approach it was possible to perform a systematic deconvolution procedure on the Raman spectra. By analysing the related intensity, band position and bandwidth of the different Raman features, it was determined that smaller graphite crystallites, which have less defects, are formed when the partial pressure of hydrogen in the feed was increased.

  3. Residual stress distribution of the soldered structure with Kovar alloy and Al2O3 ceramics

    Directory of Open Access Journals (Sweden)

    Qile Gao

    2017-03-01

    Full Text Available Residual stress distribution in soldered structure of Kovar alloy and Al2O3 ceramics was determined using XRD analyses. In order to measure the residual stress, position of the characteristic diffraction peak and stress constant were obtained using several versatile/advanced techniques after calibration. Residual stress of soldered structure was measured based on the diffraction patterns obtained for the distribution of residual stress in the soldered joint. Only diffraction peak at 149° for Kovar alloy and two diffraction peaks ranging from 140–170° for Al2O3 ceramics were found to be appropriate for the residual stress determination. It was also confirmed that for Al2O3 ceramics the XRD peak at 152° reflects the changes of stress more precisely than the one at 146°. The stress constant K of Kovar alloy and Al2O3 ceramics was found to be −197 MPa/° and −654 MPa/°, respectively. After soldering, the maximum residual stress of the soldered joint of both materials developed at 1 mm from the soldering seam, and the values within 3 mm from the soldering seam are generally significant. Thus, it is important to pay attention to the area of 3 mm from the soldering seam in practical application.

  4. Preparation and Characterization of NiMo/Al2O3Catalyst for Hydrocracking Processing

    Science.gov (United States)

    Widiyadi, Aditya; Guspiani, Gema Adil; Riady, Jeffry; Andreanto, Rikky; Chaiunnisa, Safina Dea; Widayat

    2018-02-01

    Hydrocracking is a chemical process used in petroleum refineries for converting high boiling hydrocarbons in petroleum crude oils to more valuable lower boiling products such as gasoline, kerosene, and diesel oil that operate at high temperature and pressure. Catalyst was used in hydrocracking to reduce temperature and pressure. Hydrocracking catalyst are composed of active components and support. Alumina is widely used in hydrocracking process as catalyst support due to its high surface area, high thermal stability, and low prices. The objective of this research was preparated NiMo/Al2O3 catalyst that used as hydrocracking catalyst. Catalyst was synthesized by wetness impregnation method and simple heating method with various kind of Al2O3. The physicochemical properties of catalyst were investigated by X-ray diffraction (XRD) to determine type of crystal and scanning electron microscopy (SEM) to determine morphology of the catalyst. The NiMo/Al2O3 catalyst prepared by aluminium potassium sulfate dodecahydrate exhibited the highest crystallinity of 90.23% and it is clear that MoO3 and NiO crystallites are highly dispersed on the NiMo/Al2O3 catalyst which indicates as the best catalyst. The catalytic activity in hydrocracking process was successfully examined to convert fatty acid into hydrocarbon.

  5. Interaction of Pd with steps on alpha-Al2O3(0001)

    DEFF Research Database (Denmark)

    Lodziana, Zbiegniew; Nørskov, Jens Kehlet

    2002-01-01

    Based on density functional calculations, we show that steps on the alpha-Al2O3 (0 0 0 1) surface are enriched in oxygen and that they bind Pd atoms and small clusters much stronger than the terraces. We also show that Pd can diffuse quite freely on an alumina surface and use this to explain why...

  6. Theoretical investigation of the structure of κ-Al2O3

    DEFF Research Database (Denmark)

    Yourdshahyan, Y.; Engberg, U.; Bengtsson, L.

    1997-01-01

    Using plane-wave pseudopotential calculations based on density-functional theory at the local-density-approximation level we investigate all the possible kappa-Al2O3 structures which are permitted by the known crystal symmetry. We find that structures with sixfold coordinated Al atoms...

  7. Characterization of microstructure and properties of Al–Al3Zr–Al2O3 ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 39; Issue 4. Characterization of microstructure and properties of Al–Al 3 Zr–Al 2 O 3 composite ... ANUP MANDAL1 KARABI DAS1 SIDDHARTHA DAS1. Department of Metallurgical & Materials Engineering, Indian Institute of Technology, Kharagpur 721 302, India ...

  8. Linear reciprocating wear behaviour of plasma-sprayed Al2O3 ...

    Indian Academy of Sciences (India)

    Balmukund Dhakar

    2017-08-31

    sprayed Al2O3–Cr2O3 coatings applied on steel substrates. ... torch prior to the deposition of coating material. 2.2 Characterisation of coating ..... and high temperature oxidation behaviour of wire arc sprayed iron based coatings.

  9. Heat transfer of Al2O3 nanofluids in microchannel heat sink

    Science.gov (United States)

    Razali, A. A.; Sadikin, A.; Ibrahim, S. A.

    2017-04-01

    Microchannel heat sink creates an innovative cooling technology to remove large amount of heat from small area. Recently, nanotechnology gain interest to explore the microchannel cooling benefits of nanofluids as working fluid. The objective of this study is to investigate the effect of heat transfer to Al2O3 nanofluids after used as working fluid in the microchannel. In this study, the microchannel was design in square shape with a cross section of 0.5×0.5 mm2 and made by copper. The experiment was conducted in laminar flow with Reynolds number ranging approximately from 633 to 1172. The present study was focused on heat transfer of Al2O3 nanofluids in microchannel heat sink at concentration of 1.0 wt. % and 2.5 wt. % dispersed in water. The heat was produced at bottom of the heat sink is 325 W. The computational simulation method was carried out to validate the experimental results. It was observed that the heat transfer rate is higher when using Al2O3 nanofluids compared to water. However, according to X-ray diffraction method (XRD), it is found that the structure of Al2O3 particles tends to more integrity and the crystallite size grows up after increased the temperature in the microchannel.

  10. Selective hydrogenation of maleic anhydride over Pd/Al2O3 ...

    Indian Academy of Sciences (India)

    The results showed that the activity of the Pd/Al2O3 catalysts was excellent due to its high active surface area. ... avoid the high cost of separating the solvent from the reaction mixture, solvent-free hydrogenation of MA ... loss of reaction activity was observed after 120 h.3. Noble catalysts, especially Pd-based catalysts, have.

  11. Classical Bahavior of Alumina (Al2O3) Nanofluids in Antifrogen N with Experimental Evidence

    NARCIS (Netherlands)

    Saleemi, M.; Vanapalli, Srinivas; Nikkam, N.; Toprak, M.S.; Muhammed, M.

    2015-01-01

    A nanofluid is a suspension containing nanoparticles in conventional heat transfer fluids. This paper reports on an investigation of alumina (Al2O3) nanoparticles in Antifrogen N, also called AFN, which is a popular antifreeze coolant consisting primarily of ethylene glycol and other additives to

  12. Dilatometric studies of Y 2 W 3 O 12 with added Al 2 O 3

    Indian Academy of Sciences (India)

    ... due to the removal of water molecules. Al2O3 has been added to Y2W3O12 up to 10 wt% in an attempt to overcome the hygroscopicity and reduce the particle size and thereby the thermal expansion hysteresis. Thermo gravimetric, dilatometric and electron microscopic studies are presented to support these observations.

  13. Theory of Al2O3 incorporation in SiO2

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper

    2002-01-01

    Different possible forms of Al2O3 units in a SiO2 network are studied theoretically within the framework of density-functional theory. Total-energy differences between the various configurations are obtained, and simple thermodynamical arguments are used to provide an estimate of their relative...

  14. Characterization of microstructure and properties of Al–Al3Zr–Al2O3 ...

    Indian Academy of Sciences (India)

    corrosion resistance, high thermal and electrical conductivity and high damping capacity. However, Al alloys possess poor wear and seizure resistance. To improve the above proper- ties, researchers successfully dispersed various hard and soft reinforcements such as SiC [2], Al2O3 [3,4], TiC [5], silicon particle [6], carbon ...

  15. Preparation and Characterization of NiMo/Al2O3Catalyst for Hydrocracking Processing

    Directory of Open Access Journals (Sweden)

    Widiyadi Aditya

    2018-01-01

    Full Text Available Hydrocracking is a chemical process used in petroleum refineries for converting high boiling hydrocarbons in petroleum crude oils to more valuable lower boiling products such as gasoline, kerosene, and diesel oil that operate at high temperature and pressure. Catalyst was used in hydrocracking to reduce temperature and pressure. Hydrocracking catalyst are composed of active components and support. Alumina is widely used in hydrocracking process as catalyst support due to its high surface area, high thermal stability, and low prices. The objective of this research was preparated NiMo/Al2O3 catalyst that used as hydrocracking catalyst. Catalyst was synthesized by wetness impregnation method and simple heating method with various kind of Al2O3. The physicochemical properties of catalyst were investigated by X-ray diffraction (XRD to determine type of crystal and scanning electron microscopy (SEM to determine morphology of the catalyst. The NiMo/Al2O3 catalyst prepared by aluminium potassium sulfate dodecahydrate exhibited the highest crystallinity of 90.23% and it is clear that MoO3 and NiO crystallites are highly dispersed on the NiMo/Al2O3 catalyst which indicates as the best catalyst. The catalytic activity in hydrocracking process was successfully examined to convert fatty acid into hydrocarbon.

  16. Neutron studies of nanostructured CuOAl 2O 3 NO x removal catalysts

    Science.gov (United States)

    Masakuni Ozawa; Chun-Keung Loong

    Nanostructured powders of automotive catalytic system CuOAl 2O 3, targeted for nitrogen oxides (NO x) removal under lean-burn engine conditions, were investigated using neutron diffraction and small-angle neutron scattering. The crystal phases, structural transformations and microstructure oof 10 mol% CuAl 2O 3 powders are characterized according to the heat-treatment conditions. These properties are correlated with the pore structure and NO x removal efficiency determined by nitrogen adsorption isotherm, electron spin resonance, and temperature-programmed reaction measurements. The γ-(Cu, Al) 2O 3 phase and the mass-fractal-like aggregate of particles (size ≈ 26 nm) at annealing temperatures below 900°C were found to be crucial to the high NO x removal performance. The transformation to bulk crystalline phases of α-Al 2O 3 + CuAl 2O 4 spinel above ∼ 1050°C corresponds to a drastic drop of NO x removal efficiency. The usefulness of neutron-scattering techniques as well as their complementarity with other traditional methods of catalytic research are discussed.

  17. Neutron studies of nanostructured CuO-Al2O3 NOx removal catalysts

    International Nuclear Information System (INIS)

    Ozawa, Masakuni; Loong Chun-Keung

    1997-01-01

    Nanostructured powders of automotive catalytic system CuO0Al 2 O 3 , targeted for nitrogen oxides (NOx) removal under lean-burn engine conditions, were investigated using neutron diffraction and small-angle neutron scattering. The crystal phases, structural transformations and microstructure of 10 mol% Cu-Al 2 O 3 powders are characterized according to the heat-treatment conditions. These properties are correlated with the pore structure and NOx removal efficiency determined by nitrogen adsorption isotherm, electron spin resonance, and temperature programmed reaction measurements. The γ-(Cu, Al) 2 O 3 phase and the mass-fractal-like aggregate of particles (size ∼ 26 nm) at annealing temperatures below 900 degrees C were found to be crucial to the high NOx removal performance. The transformation to bulk crystalline phases of α-Al 2 O 3 + CuAl 2 O 4 spinel above ∼1050 degrees C corresponds to a drastic drop of Nox removal efficiency. The usefulness of neutron-scattering techniques as well as their complementarity with other traditional methods of catalytic research are discussed

  18. Polymer-assisted co-precipitation route for the synthesis of Al2O3 ...

    Indian Academy of Sciences (India)

    A polymer-assisted (Pluronic P123 triblock co-polymer) co-precipitation route has been employed to synthesize Al 2 O 3 –TiO 2 nanoparticles. As a surfactant, pluronic P123 polymer exhibits hydrophobic as well as the hydrophilic nature simultaneously which detains the agglomeration and hence the nano size particle have ...

  19. Carbon nanotubes purification constrains due to large Fe–Ni/Al2O3 ...

    Indian Academy of Sciences (India)

    †Research Institute for Technical Physics and Materials Science, P.O. Box 49, Budapest H-1525, Hungary. MS received 10 August 2011; ... (CNTs) have become very promising material for many tech- nological applications due to their ... to optimal metal-support interaction (MSI) in Fe–Ni/Al2O3 catalyst has been discussed ...

  20. Synthesis of γ-Al2O3 nanowires through a boehmite precursor route

    Indian Academy of Sciences (India)

    2016-08-26

    Aug 26, 2016 ... Thermogravimetric analysis (TG), differential thermal analysis (DTA), X-ray diffraction (XRD), transmission electron microscope (TEM), selected area electron diffraction (SAED) and high resolution transmission electron microscope (HRTEM) were used to characterize the features of the as-made -Al2O3 ...

  1. Radioluminescence in Al2O3: C - analytical and numerical simulation results

    DEFF Research Database (Denmark)

    Pagonis, V.; Lawless, J.; Chen, R.

    2009-01-01

    The phenomenon of radioluminescence (RL) has been reported in a number of materials including Al2O3 : C, which is one of the main dosimetric materials. In this work, we study RL using a kinetic model involving two trapping states and two kinds of recombination centres. The model has been previous...

  2. METHANOL OXIDATION OVER AU/ γ -AL 2O3 CATALYSTS 149

    African Journals Online (AJOL)

    DR. AMINU

    1981) and (Ozkan et al. 1990). The reactions and experimental results indicate that a ZnO-Cr2O3/CeO2-ZrO2/Al2O3 catalyst is a promising catalyst for the hydrogen production from methanol oxidation reforming. There was no significant deactivation of the catalyst over 1000 hours of continuous operation. The oxidation of.

  3. ratio on the deformation behaviour of Fe–Al2O3 metal matrix ...

    Indian Academy of Sciences (India)

    3Department of Mechanical Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005,. India. MS received 17 March 2015; accepted 21 March 2016. Abstract. The present paper reports the effect of height to diameter (h/d) ratio on the deformation behaviour of Fe–Al2O3 metal matrix ...

  4. Methanol oxidation over Au/γ-Al 2 O 3 catalysts | Nuhu | Bayero ...

    African Journals Online (AJOL)

    Methanol adsorption and reaction was investigated over Au/γ-Al2O3 catalysts. The catalysts were prepared by deposition precipitation (DP) and incipient wetness impregnation methods. The catalysts were used to catalyze the oxidation of methanol and characterised using X-ray diffraction (XRD), temperature programmed ...

  5. Thermally stimulated conductivity and thermoluminescence from Al2O3 : C

    DEFF Research Database (Denmark)

    Agersnap Larsen, N.; Bøtter-Jensen, L.; McKeever, S.W.S.

    1999-01-01

    Simultaneous measurements of thermoluminescence (TL) and thermally stimulated conductivity (TSC) are reported on single-crystal dosimetry-quality Al2O3:C following gamma irradiation at room temperature. Analysis of the data reveals a superposition of several first-order TL and TSC peaks caused...

  6. Microstructural characterization in diffusion bonded TiC–Al2O3/Cr18 ...

    Indian Academy of Sciences (India)

    The diffusion bonded TiC–Al2O3/Cr18–Ni8 joint was investigated by a variety of characterization techniques such as scanning electron microscope (SEM) with energy dispersion spectroscopy (EDS) and X-ray diffraction (XRD). The results indicate that Ti foil is fully fused to react with elements from substrates and Ti3Al, TiC ...

  7. Electrophoretic deposition and reaction-bond sintering of Al2O3/Ti ...

    Indian Academy of Sciences (India)

    ... studied in comparison with uncoated sample. The results demonstrate that the density of Al2O3/Ti composite coating increased considerably after heat treatment process. Moreover, wearing resistance of TiAl6V4 alloy escalated considerably, increasing its potential for application in orthopedic implants and artificial joints.

  8. Porous HA-Al2O3 composite characterization using corn starch as a porogen agent

    International Nuclear Information System (INIS)

    Silva, L.A.J. da; Galdino, A.G.S.; Cardoso, G.B.C.; Zavaglia, C.A.C.

    2011-01-01

    The porous ceramics based on hydroxyapatite have great potential for application in bone grafts due to its chemical similarity with the mineral phase of bone tissue, but have poor biomechanical properties, which cause limitations in its applications. This work aims to analyze the structural characteristics of porous ceramics obtained by addition of hydroxyapatite (HA, sintered in the laboratory), Corn Starch (CS, commercial) and Al 2 O 3 (ALCOA), at different temperatures. Samples were made of dense HA (100% HA), porous (70% HA - 30% CS) and with addition of 2.5%, 5% and 7.5% Al 2 O 3 porous composition. The samples were sintered at 1250°C, 1300 deg C and 135 0°C and characterized by: XRF, XRD, SEM and density by the Archimedes method. Concludes It is the possibility of obtaining samples porous HA / Al 2 O 3 using starch as porogenic agent. The temperature and concentration of Al 2 O 3 most appropriate were: 1250°C and 7.5%. (author)

  9. Ir-Ru/Al2O3 catalysts used in satellite propulsion

    Directory of Open Access Journals (Sweden)

    T.G. Soares Neto

    2003-09-01

    Full Text Available Ir/Al2O3, Ir-Ru/Al2O3 and Ru/Al2O3, catalysts with total metal contents of 30% were prepared using the methods of incipient wetness and incipient coimpregnation wetness and were tested in a 2N microthruster. Their performances were then compared with that of the Shell 405 commercial catalyst (30% Ir/Al2O3. Tests were performed in continuous and pulsed regimes, where there are steep temperature and pressure gradients, from ambient values up to 650 ºC and 14 bar. Performance stability, thrust produced, temperature and stagnation pressure in the chamber and losses of mass were analyzed and compared to the corresponding parameters in Shell 405 tests. It was observed that the performance of all the above-mentioned catalysts was comparable to that of the commercial one, except for in loss of mass, where the values was higher, which was attributed to the lower mechanical resistance of the support.

  10. Resistance switching of epitaxial VO2/Al2O3 heterostructure at room temperature induced by organic liquids

    Directory of Open Access Journals (Sweden)

    Mengmeng Yang

    2015-03-01

    Full Text Available We studied using organic liquids (cyclohexane, n-butanol, and ethylene glycol to modulate the transport properties at room temperature of an epitaxial VO2 film on a VO2/Al2O3 heterostructure. The resistance of the VO2 film increased when coated with cyclohexane or n-butanol, with maximum changes of 31% and 3.8%, respectively. In contrast, it decreased when coated with ethylene glycol, with a maximum change of −7.7%. In all cases, the resistance recovered to its original value after removing the organic liquid. This organic-liquid-induced reversible resistance switching suggests that VO2 films can be used as organic molecular sensors.

  11. Detection of chemical substances in water using an oxide nanowire transistor covered with a hydrophobic nanoparticle thin film as a liquid-vapour separation filter

    Directory of Open Access Journals (Sweden)

    Taekyung Lim

    2016-08-01

    Full Text Available We have developed a method to detect the presence of small amounts of chemical substances in water, using a Al2O3 nanoparticle thin film covered with phosphonic acid (HDF-PA self-assembled monolayer. The HDF-PA self-assembled Al2O3 nanoparticle thin film acts as a liquid-vapour separation filter, allowing the passage of chemical vapour while blocking liquids. Prevention of the liquid from contacting the SnO2 nanowire and source-drain electrodes is required in order to avoid abnormal operation. Using this characteristic, the concentration of chemical substances in water could be evaluated by measuring the current changes in the SnO2 nanowire transistor covered with the HDF-PA self-assembled Al2O3 nanoparticle thin film.

  12. Atomic layer deposition α-Al2O3 diffusion barriers to eliminate the memory effect in beta-gamma radioxenon detectors

    International Nuclear Information System (INIS)

    Warburton, W.K.; Wolfgang Hennig; Bertrand, J.A.; George, S.M.; Steven Biegalski

    2013-01-01

    Well designed scintillator detectors, including such examples as ARSA, SAUNA, and XIA's 'PhosWatch', can readily achieve the state of the art radioxenon detection limits required for nuclear explosion monitoring. They are also reliable, robust detectors that do not require cryogenic cooling for operation. All three employ the principle of beta-gamma coincidence detection to reduce background counting rates, using a BC-404 plastic scintillator to detect the betas and a CsI or NaI scintillator to detect the gamma-rays. As a consequence of this commonality of design, all three also display a 'memory effect' arising from the diffusion of Xe into BC-404. Thus, when one sample is pumped out of the detector, a fraction remains behind, embedded in the BC-404, where it artificially raises the signal counting rate for the next sample. While this is not a fatal flaw in scintillator detectors, developing a method to eliminate the memory effect would significantly enhance their utility. This paper reports efforts to develop thin, amorphous Al 2 O 3 films, deposited by atomic layer deposition (ALD) to act as diffusion barriers on the BC-404 surfaces exposed to radioxenon. Using radon as a convenient substitute for Xe, film thicknesses between 2 and 10 nm were originally investigated and found to show a memory effect to varying degrees. A second set of 20 and 30 nm films was then produced, which appeared to completely eliminate the radon memory effect, but, when consequentially tested with radioxenon, were found to exhibit xenon memory effects that were approximately half of the effect found on uncoated BC-404. We draw two conclusions from this result. The first is that it will be necessary to develop an improved method for depositing thicker ALD Al 2 O 3 films at lower temperatures while still retaining high film quality. The second is that, since xenon is required to test for the xenon memory effect, we need a test method that does not require xenon radio-isotopes in order to

  13. An Experimental Study of Sintered (Ni-Cr-xAl2O3 Composites

    Directory of Open Access Journals (Sweden)

    Alaa Abdulhasan Atiyah

    2016-09-01

    Full Text Available This paper deals with the (Ni-Cr- xAl2O3 metallic composites (MCCs. Restraining of of thermal expansion at adequate mechanical and corrosion properties is the main objective of this work. Composites are fabricated with four weight percentages of (x = 1, 2, 5 and 10% Al2O3. Compacting and sintering has accomplished at (636 MPa and 1250oC for 7 hrs. All sintered compacts were examined for phases and microstructure featuring. Results have indicated, the incorporation of Al2O3 with the matrix is due to the efficient sintering conditions, that diminishing the grain growth and increasing the softening temperature from 850°C to become 1350°C. Volume expansion appeared in the base sintered composites (NiCr-xAl2O3 due to pores evolution according to SEM observation. As, the Al2O3 has increased, the microhardness and corrosion resistance have improved. DSC results show a clear one exothermic and one endothermic reaction were occurred during the heating cycle. Corrosion behavior of fabricated composites was estimated by polarization curves using Potentiostat at scan rate 3 mV.sec-1. Potential-time measurements showed the formation of protective layer on surface composites compared with Ni-Cr base composite through an obtaining of the nobler open circuit potentials for composites. Corrosion parameters were estimated by the Tafel extrapolation method, these parameters indicated that the corrosion potential shifted toward a positive direction in addition to get lower corrosion current density especially for Ni-Cr/5%Alumina composite.

  14. Surface amorphization in Al2O3 induced by swift heavy ion irradiation

    Science.gov (United States)

    Okubo, N.; Ishikawa, N.; Sataka, M.; Jitsukawa, S.

    2013-11-01

    Microstructure in single crystalline Al2O3 developed during irradiation by swift heavy ions has been investigated. The specimens were irradiated by Xe ions with energies from 70 to 160 MeV at ambient temperature. The fluences were in the range from 1.0 × 1013 to 1.0 × 1015 ions/cm2. After irradiations, X-ray diffractometry (XRD) measurements and cross sectional transmission electron microscope (TEM) observations were conducted. The XRD results indicate that in the initial stage of amorphization in single crystalline Al2O3, high-density Se causes the formation of new planes and disordering. The new distorted lattice planes formed in the early stage of irradiation around the fluence of 5.0 × 1013 ions/cm2 for single crystalline Al2O3 irradiated with 160 MeV-Xe ions. Energy dependence on structural modification was also examined in single crystalline Al2O3 irradiated by swift heavy ions. The XRD results indicate that the swift heavy ion irradiation causes the lattice expansion and the structural modification leading to amorphization progresses above the energy around 100 MeV in this XRD study. The TEM observations demonstrated that amorphization was induced in surface region in single crystalline Al2O3 irradiated by swift heavy ions above the fluence expected from the results of XRD. Obvious boundary was observed in the cross sectional TEM images. The crystal structure of surface region above the boundary was identified to be amorphous and deeper region to be single crystal. The threshold fluence of amorphization was found to be around 1.0 × 1014 ions/cm2 in the case over 80 MeV swift heavy ion irradiation and the fluence did not depend on the crystal structures.

  15. Sintering behavior and property of bioglass modified HA-Al2O3 composite

    Directory of Open Access Journals (Sweden)

    Wang Li-li

    2012-01-01

    Full Text Available The bioglass modified HA-Al2O3 composites were successfully fabricated by mixing HA, synthesized by wet chemical method between precursor materials H3PO4 and Ca(OH2, with 25wt% Al2O3 and different content of bioglass (5%, 25%, 45%, 65wt% respectively, with a mole fraction of 53.9%SiO2, 22.6%Na2O, 21.8%CaO, and 1.7wt%P2O5, sintered in air at various temperatures (750-950°C for 2h. when the content of bioglass is below 45wt% in the composite, HA decomposes completely and transforms to β-TCP. The main phase in this case are β-TCP, Al2O3 and Ca3(AlO32.When the content of bioglass is above 45wt% in the composite, the decomposition of HA to β-TCP is suppressed and the main phases in this case are Al2O3 and HA, DCP□CaHPO4□ and β-TCP, which almost have the same chemical composition, forming ternary-glass phase, and have better bioactive than pure HA. It can also be found that at the certain addition of bioglass, the higher sintered temperature, the bigger volume density and flexural strength of the composite are, but when the sintered temperature reaches 950°C, they decrease. This modified HA-Al2O3 composites by calcium silicate glass have a much lower sintering temperature and decrease the production cost much.

  16. Radiative Properties of Ceramic Al2O3, AlN and Si3N4—II: Modeling

    Science.gov (United States)

    Yang, Peiyan; Cheng, Qiang; Zhang, Zhuomin

    2017-08-01

    In Part I of this study (Cheng et al. in Int J Thermophys 37: 62, 2016), the reflectance and transmittance of dense ceramic plates were measured at wavelengths from 0.4 μm to about 20 μm. The samples of Al2O3 and AlN are semitransparent in the wavelength region from 0.4 μm to about 7 μm, where volume scattering dominates the absorption and scattering behaviors. On the other hand, the Si3N4 plate is opaque in the whole wavelength region. In the mid-infrared region, all samples show phonon vibration bands and surface reflection appears to be strong. The present study focuses on modeling the radiative properties and uses an inverse method to obtain the scattering and absorption coefficients of Al2O3 and AlN in the semitransparent region from the measured directional-hemispherical reflectance and transmittance. The scattering coefficient is also predicted using Mie theory for comparison. The Lorentz oscillator model is applied to fit the reflectance spectra of AlN and Si3N4 from 1.6 μm to 20 μm in order to obtain their optical constants. It is found that the phonon modes for Si3N4 are much stronger in the polycrystalline sample studied here than in amorphous films reported previously.

  17. Plasma spray deposition of Al-Al2O3 coatings doped with metal oxides: catalytic applications

    International Nuclear Information System (INIS)

    Pranevicius, L.; Pranevicius, L.L.; Valatkevicius, P.; Valincius, V.

    2000-01-01

    Al-Al 2 O 3 (70% γ-phase) coatings 30-50 μm thick well-adhered to the steel sheets and with a highly developed surface area (100-120 m 2 g -1 ) were formed employing plasma-spray technology at atmospheric pressure in air. The plasma-gun with two sequential powder feeders was developed offering the ability to control particle trajectories through the plasma flame, and thus their thermal history. The Al powder is mainly melted and oxidized. Al(OH) 3 powder passes through the plasma torch with partial dissociation and is incorporated in the matrix of growing film with subsequent decomposition during thermal annealing at 560 C for 90 min. The good adhesion results are explained by the surface pre-treatment effects taking place on the periphery of the plasma torch moving along the surface of steel sheets. The plasma sprayed Al-Al 2 O 3 coatings doped with CuO and Cr 2 O 3 oxides showed characteristic catalytic combustion behaviors. (orig.)

  18. Synergistic toxic effect of nano-Al2O3 and As(V) on Ceriodaphnia dubia

    International Nuclear Information System (INIS)

    Wang Demin; Hu Ji; Forthaus, Brett E.; Wang Jianmin

    2011-01-01

    Engineered nanomaterials (ENMs) alone could negatively impact the environment and human health. However, their role in the presence of other toxic substances is not well understood. The toxicity of nano-Al 2 O 3 , inorganic As(V), and a combination of both was examined with C. dubia as the model organisms. Bare nano-Al 2 O 3 particles exhibited partial mortality at concentrations of greater than 200 mg/L. When As(V) was also present, a significant amount of As(V) was accumulated on the nano-Al 2 O 3 surface, and the calculated LC 50 of As(V) in the presence of nano-Al 2 O 3 was lower than that it was without the nano-Al 2 O 3 . The adsorption of As(V) on the nano-Al 2 O 3 surface and the uptake of nano-Al 2 O 3 by C. dubia were both verified. Therefore, the uptake of As(V)-loaded nano-Al 2 O 3 was a major reason for the enhanced toxic effect. - Highlights: → Nano-Al 2 O 3 particles alone do not have significant toxic effect on C. dubia. → However, nano-Al 2 O 3 particles significantly enhance the toxicity of As(V). → The uptake of As-loaded nano-Al 2 O 3 by C. dubia plays the major role on the toxicity. - Nano-Al 2 O 3 could accumulate background As(V) and enhance As(V) toxicity on C. dubia through the uptake of As(V)-loaded nano-Al 2 O 3 particles.

  19. Optimization of AZO films prepared on flexible substrates

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Transparent conductive Al2O3-doped zinc oxide (in AZO, Al2O3 content is ~ 2 wt%) thin films are deposited on flexible polyethylene terephthalate (PET) substrates, using radio frequency (rf) magnetron sput- tering. The Taguchi method with an L9 (34) orthogonal array, a signal-to-noise ratio and analysis of.

  20. Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS

    Science.gov (United States)

    Usman, Muhammad; Arshad, Muhammad; Saveda Suvanam, Sethu; Hallén, Anders

    2018-03-01

    The instability of Al2O3/4H-SiC interface at various process temperatures and ambient is investigated by the annealing of Al2O3/4H-SiC in low vacuum conditions as well as in N2 environments. Atomic layer deposited Al2O3 on a 4H-SiC substrate with 3, 6 and 10 nm of thicknesses is treated at 300, 500, 700 and 900 °C under the vacuum level of 10‑1 torr. The as-deposited and annealed structures are analyzed using x-ray photoelectron spectroscopy. It is hypothesized that the minute quantity of oxygen present in low vacuum conditions diffuses through thin layers of Al2O3 and helps in forming SiO2 at the interface even at low temperatures (i.e. 300 °C), which plays a pivotal role in determining the electrical properties of the interface. It is also proved that the absence of oxygen in the ambient prevents the formation of SiO2 at low temperatures. Additionally, it is observed that Al–OH is present in as-deposited layers, which gradually reduces after annealing. However, at around 700 °C, the concentration of oxygen in the whole structure increases to maximum and reduces at 900 °C.

  1. In situ attenuated total reflection infrared (ATR-IR) study of the adsorption of NO2-, NH2OH, and NH4+ on Pd/Al2O3 and Pt/Al2O3.

    NARCIS (Netherlands)

    Ebbesen, S.D.; Mojet, Barbara; Lefferts, Leonardus

    2008-01-01

    In relation to the heterogeneous hydrogenation of nitrite, adsorption of NO2-, NH4+, and NH2OH from the aqueous phase was examined on Pt/Al2O3, Pd/Al2O3, and Al2O3. None of the investigated inorganic nitrogen compounds adsorb on alumina at conditions presented in this study. NO2-(aq) and NH4+(aq) on

  2. Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

    Directory of Open Access Journals (Sweden)

    Shinichi Takagi

    2012-03-01

    Full Text Available Interface-formation processes in atomic layer deposition (ALD of Al2O3 on InGaAs surfaces were investigated using on-line Auger electron spectroscopy. Al2O3 ALD was carried out by repeating a cycle of Al(CH33 (trimethylaluminum, TMA adsorption and oxidation by H2O. The first two ALD cycles increased the Al KLL signal, whereas they did not increase the O KLL signal. Al2O3 bulk-film growth started from the third cycle. These observations indicated that the Al2O3/InGaAs interface was formed by reduction of the surface oxides with TMA. In order to investigate the effect of surface-oxide reduction on metal-insulator-semiconductor (MIS properties, capacitors and field-effect transistors (FETs were fabricated by changing the TMA dosage during the interface formation stage. The frequency dispersion of the capacitance-voltage characteristics was reduced by employing a high TMA dosage. The high TMA dosage, however, induced fixed negative charges at the MIS interface and degraded channel mobility.

  3. Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al2O3 Insulator

    Science.gov (United States)

    Dzyadukh, S. M.; Voitsekhovskii, A. V.; Nesmelov, S. N.; Sidorov, G. Yu.; Varavin, V. S.; Vasil'ev, V. V.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.

    2018-03-01

    Admittance of MIS structures based on n(p)- Hg1-xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2O3, and CdTe/Al2O3 insulators is studied experimentally at 77 K. Growth of an intermediate CdTe layer during epitaxy results in the almost complete disappearance of the hysteresis of electrophysical characteristics of MIS structures based on graded-gap n-HgCdTe for a small range of the voltage variation. For a wide range of the voltage variation, the hysteresis of the capacitance-voltage characteristics appears for MIS structures based on n-HgCdTe with the CdTe/Al2O3 insulator. However, the hysteresis mechanism differs from that in case of a single-layer Al2O3 insulator. For MIS structures based on p-HgCdTe, introduction of an additional CdTe layer does not lead to a significant decrease of the hysteresis phenomena, which may be due to the degradation of the interface properties when mercury leaves the film as a result of low-temperature annealing changing the conductivity type of the semiconductor.

  4. Thermal stability and fracture toughness of epoxy resins modified with epoxidized castor oil and Al2O3 nanoparticles

    International Nuclear Information System (INIS)

    Zhu, Lin; Jin, Fanlong; Park, Soojin

    2012-01-01

    This study examined the effects of the epoxidized castor oil (ECO) and Al 2 O 3 content on the thermal stability and fracture toughness of the diglycidylether of bisphenol-A (DGEBA)/ECO/Al 2 O 3 ternary composites using a range of techniques. The thermal stability of the composites was decreased by the addition of ECO and Al 2 O 3 nanoparticles. The fracture toughness of the composites was improved significantly by the addition of ECO and Al 2 O 3 nanoparticles. The composite containing 3 wt % Al 2 O 3 nanoparticles showed the maximum flexural strength. Scanning electron microscopy (SEM) revealed tortuous cracks in the DGEBA/ECO/Al 2 O 3 composites, which prevented deformation and crack propagation

  5. Phase transition and thermal expansion studies of alumina thin films prepared by reactive pulsed laser deposition.

    Science.gov (United States)

    Balakrishnan, G; Thirumurugesan, R; Mohandas, E; Sastikumar, D; Kuppusami, P; Songl, J I

    2014-10-01

    Aluminium oxide (Al2O3) thin films were deposited on Si (100) substrates at an optimized oxygen partial pressure of 3 x 10(-3) mbar at room temperature by pulsed laser deposition (PLD). The films were characterized by high temperature X-ray diffraction (HTXRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The HTXRD pattern showed the cubic y-Al2O3 phase in the temperature range 300-973 K. At temperatures ≥ 1073 K, the δ and θ-phases of Al2O3 were observed. The mean linear thermal expansion coefficient and volume thermal expansion coefficient of γ-Al2O3 was found to be 12.66 x 10(-6) K(-1) and 38.87 x 10(-6) K(-1) in the temperature range 300 K-1073 K. The field emission scanning electron microscopy revealed a smooth and structureless morphology of the films deposited on Si (100). The atomic force microscopy study indicated the increased crystallinity and surface roughness of the films after annealing at high temperature.

  6. Room-Temperature Atomic Layer Deposition of Al2 O3 : Impact on Efficiency, Stability and Surface Properties in Perovskite Solar Cells.

    Science.gov (United States)

    Kot, Malgorzata; Das, Chittaranjan; Wang, Zhiping; Henkel, Karsten; Rouissi, Zied; Wojciechowski, Konrad; Snaith, Henry J; Schmeisser, Dieter

    2016-12-20

    In this work, solar cells with a freshly made CH 3 NH 3 PbI 3 perovskite film showed a power conversion efficiency (PCE) of 15.4 % whereas the one with 50 days aged perovskite film only 6.1 %. However, when the aged perovskite was covered with a layer of Al 2 O 3 deposited by atomic layer deposition (ALD) at room temperature (RT), the PCE value was clearly enhanced. X-ray photoelectron spectroscopy study showed that the ALD precursors are chemically active only at the perovskite surface and passivate it. Moreover, the RT-ALD-Al 2 O 3 -covered perovskite films showed enhanced ambient air stability. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Effects of a second phase on the tribological properties of Al2O3 and ZrO2 ceramics

    NARCIS (Netherlands)

    He, Y.; Winnubst, Aloysius J.A.; Schipper, Dirk J.; Burggraaf, Anthonie; Burggraaf, A.J.; Verweij, H.

    1997-01-01

    The tribological properties of four different materials are investigated, tetragonal zirconia (Y-ZTP), Al2O3 dispersed in Y-TZP (ADZ), ZrO2 dispersed in Al2O3 (ZTA) and Al2O3 (with 300 ppm MgO). These materials are used as a cylinder sliding against a plate of Y-TZP (TZ-3Y)). Compared to Y-TZP, the

  8. Thin Film

    African Journals Online (AJOL)

    a

    organic substances. KEY WORDS: Photoelectrocatalysis, Titanium dioxide, Cuprous oxide, Composite thin film, Photo electrode. INTRODUCTION ... reddish p-type semiconductor with a direct band gap of 2.0-2.2 eV [18, 19]. ... Photoelectrocatalytic removal of color from water using TiO2 and TiO2/Cu2O electrodes. Bull.

  9. Preparation and Characterization of Liquid Crystalline Polyurethane/Al2O3/Epoxy Resin Composites for Electronic Packaging

    Directory of Open Access Journals (Sweden)

    Shaorong Lu

    2012-01-01

    Full Text Available Liquid crystalline polyurethane (LCPU/Al2O3/epoxy resin composites were prepared by using LCPU as modifier. The mechanical properties, thermal stability, and electrical properties of the LCPU/Al2O3/epoxy resin composites were investigated systematically. The thermal oxidation analysis indicated that LCPU/Al2O3/epoxy resin composites can sustain higher thermal decomposition temperature. Meanwhile, coefficient of thermal expansion (CTE was also found to decrease with addition of LCPU and nano-Al2O3.

  10. Effect of Nano-Al2O3 on the Toxicity and Oxidative Stress of Copper towards Scenedesmus obliquus

    Science.gov (United States)

    Li, Xiaomin; Zhou, Suyang; Fan, Wenhong

    2016-01-01

    Nano-Al2O3 has been widely used in various industries; unfortunately, it can be released into the aquatic environment. Although nano-Al2O3 is believed to be of low toxicity, it can interact with other pollutants in water, such as heavy metals. However, the interactions between nano-Al2O3 and heavy metals as well as the effect of nano-Al2O3 on the toxicity of the metals have been rarely investigated. The current study investigated copper toxicity in the presence of nano-Al2O3 towards Scenedesmus obliquus. Superoxide dismutase activity and concentration of glutathione and malondialdehyde in cells were determined in order to quantify oxidative stress in this study. Results showed that the presence of nano-Al2O3 reduced the toxicity of Cu towards S. obliquus. The existence of nano-Al2O3 decreased the growth inhibition of S. obliquus. The accumulation of copper and the level of oxidative stress in algae were reduced in the presence of nano-Al2O3. Furthermore, lower copper accumulation was the main factor that mitigated copper toxicity with the addition of nano-Al2O3. The decreased copper uptake could be attributed to the adsorption of copper onto nanoparticles and the subsequent decrease of available copper in water. PMID:27294942

  11. Theoretical and experimental study on formation and adsorption of enolic species on Ag-Pd/Al 2O 3 catalyst

    Science.gov (United States)

    Gao, Hongwei; He, Hong; Feng, Qingcai; Wang, Jin

    2005-10-01

    The formation and adsorption of enolic species on a palladium promoted Ag/Al 2O 3 catalyst (denoted Ag-Pd/Al 2O 3) during the selective catalytic reduction (SCR) of NO x by C 3H 6 has been studied by means of DRIFTS and density functional calculations. The structure of the enolic species adsorbed on Ag-Pd/Al 2O 3 catalyst has been established based on the in situ DRIFTS spectra and simulated results. The reaction mechanism from C 3H 6 to enolic species on Ag-Pd/Al 2O 3 catalyst was proposed and the hypothesis about the Pd promotion was discussed.

  12. Effects of HfO2/Al2O3 gate stacks on electrical performance of planar In x Ga1- x As tunneling field-effect transistors

    Science.gov (United States)

    Ahn, Dae-Hwan; Yoon, Sang-Hee; Takenaka, Mitsuru; Takagi, Shinichi

    2017-08-01

    We study the impact of gate stacks on the electrical characteristics of Zn-diffused source In x Ga1- x As tunneling field-effect transistors (TFETs) with Al2O3 or HfO2/Al2O3 gate insulators. Ta and W gate electrodes are compared in terms of the interface trap density (D it) of InGaAs MOS interfaces. It is found that D it is lower at the W/HfO2/Al2O3 InGaAs MOS interface than at the Ta/HfO2/Al2O3 interface. The In0.53Ga0.47As TFET with a W/HfO2 (2.7 nm)/Al2O3 (0.3 nm) gate stack of 1.4-nm-thick capacitance equivalent thickness (CET) has a steep minimum subthreshold swing (SS) of 57 mV/dec, which is attributed to the thin CET and low D it. Also, the In0.53Ga0.47As (2.6 nm)/In0.67Ga0.33As (3.2 nm)/In0.53Ga0.47As (96.5 nm) quantum-well (QW) TFET supplemented with this 1.4-nm-thick CET gate stack exhibits a steeper minimum SS of 54 mV/dec and a higher on-current (I on) than those of the In0.53Ga0.47As TFET.

  13. Geant4 calculations for space radiation shielding material Al2O3

    Science.gov (United States)

    Capali, Veli; Acar Yesil, Tolga; Kaya, Gokhan; Kaplan, Abdullah; Yavuz, Mustafa; Tilki, Tahir

    2015-07-01

    Aluminium Oxide, Al2O3 is the most widely used material in the engineering applications. It is significant aluminium metal, because of its hardness and as a refractory material owing to its high melting point. This material has several engineering applications in diverse fields such as, ballistic armour systems, wear components, electrical and electronic substrates, automotive parts, components for electric industry and aero-engine. As well, it is used as a dosimeter for radiation protection and therapy applications for its optically stimulated luminescence properties. In this study, stopping powers and penetrating distances have been calculated for the alpha, proton, electron and gamma particles in space radiation shielding material Al2O3 for incident energies 1 keV - 1 GeV using GEANT4 calculation code.

  14. Nanostructured bilayer anodic TiO2/Al2O3 metal-insulator-metal capacitor.

    Science.gov (United States)

    Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

    2013-10-01

    This paper presents the fabrication of high performance bilayer TiO2/Al2O3 Metal-Insulator-Metal capacitor using anodization technique. A high capacitance density of 7 fF/microm2, low quadratic voltage coefficient of capacitance of 150 ppm/V2 and a low leakage current density of 9.1 nA/cm2 at 3 V are achieved which are suitable for Analog and Mixed signal applications. The influence of anodization voltage on structural and electrical properties of dielectric stack is studied in detail. At higher anodization voltages, we have observed the transformation of amorphous to crystalline state of TiO2/Al2O3 and improvement of electrical properties.

  15. Measurements of Specific Heat and Density of Al2O3 Nanofluid

    Science.gov (United States)

    Vajjha, Ravikanth S.; Das, Debendra K.

    2008-10-01

    This paper presents measurements of specific heat and density of aluminum oxide (Al2O3) nanoparticles suspended in 60:40 (by mass) ethylene glycol and water mixture (EG/W). These property values are necessary to determine the fluid dynamic and heat transfer characteristics of nanofluids. These properties have been measured over a range of temperatures for nanoparticle volumetric concentrations of 0 to 10%. From the experimental results, empirical correlations have been developed as a function of temperature and particle volume concentration. These correlations will be valuable in studying the heat transfer performance and the pumping power requirement of Al2O3 nanofluid in various applications such as industrial heat exchangers, building heating and automotive cooling.

  16. Determination of the thickness of Al2O3 barriers in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Buchanan, J.D.R.; Hase, T.P.A.; Tanner, B.K.; Hughes, N.D.; Hicken, R.J.

    2002-01-01

    The barrier thickness in magnetic spin-dependent tunnel junctions with Al 2 O 3 barriers has been measured using grazing incidence x-ray reflectivity and by fitting the tunneling current to the Simmons model. We have studied the effect of glow discharge oxidation time on the barrier structure, revealing a substantial increase in Al 2 O 3 thickness with oxidation. The greater thickness of barrier measured using grazing incidence x-ray reflectivity compared with that obtained by fitting current density-voltage to the Simmons electron tunneling model suggests that electron tunneling is localized to specific regions across the barrier, where the thickness is reduced by fluctuations due to nonconformal roughness

  17. Geant4 calculations for space radiation shielding material Al2O3

    Directory of Open Access Journals (Sweden)

    Capali Veli

    2015-01-01

    Full Text Available Aluminium Oxide, Al2O3 is the most widely used material in the engineering applications. It is significant aluminium metal, because of its hardness and as a refractory material owing to its high melting point. This material has several engineering applications in diverse fields such as, ballistic armour systems, wear components, electrical and electronic substrates, automotive parts, components for electric industry and aero-engine. As well, it is used as a dosimeter for radiation protection and therapy applications for its optically stimulated luminescence properties. In this study, stopping powers and penetrating distances have been calculated for the alpha, proton, electron and gamma particles in space radiation shielding material Al2O3 for incident energies 1 keV – 1 GeV using GEANT4 calculation code.

  18. Fe-Al2O3 nanocomposites prepared by high-energy ball milling

    DEFF Research Database (Denmark)

    Linderoth, Søren; Pedersen, M.S.

    1994-01-01

    Nanocomposites of alpha-Fe and alpha-Al2O3, prepared by high-energy ball milling, exhibit coercivities which are enhanced by about two orders of magnitude with respect to the bulk value. The degree of enhancement depends on the volume fraction (x(upsilon)) of Fe, with a maximum for x(upsilon) alm......Nanocomposites of alpha-Fe and alpha-Al2O3, prepared by high-energy ball milling, exhibit coercivities which are enhanced by about two orders of magnitude with respect to the bulk value. The degree of enhancement depends on the volume fraction (x(upsilon)) of Fe, with a maximum for x...

  19. TEM study of a hot-pressed Al2O3-NbC composite material

    Directory of Open Access Journals (Sweden)

    Wilson Acchar

    2005-03-01

    Full Text Available Alumina-based composites have been developed in order to improve the mechanical properties of the monolithic matrix and to replace the WC-Co material for cutting tool applications. Al2O3 reinforced with refractory carbides improves hardness, fracture toughness and wear resistance to values suitable for metalworking applications. Al2O3-NbC composites were uniaxially hot-pressed at 1650 °C in an inert atmosphere and their mechanical properties and microstructures were analyzed. Sintered density, average grain size, microhardness and fracture toughness measurements and microstructural features were evaluated. Results have shown that the mechanical properties of alumina-NbC are comparable to other carbide systems. Microstructural analysis has shown that the niobium carbide particles are mainly located at the grain boundaries of alumina grains, which is an evidence of the "pinning effect", produced by NbC particles.

  20. Pressureless infiltration of porous Al2O3 preform in molten 6061 commercial aluminium alloy

    International Nuclear Information System (INIS)

    Marin, J.; Olivares, L.; Moreno, C.; Ordonez, S.; Martinez, V.

    2001-01-01

    This paper presents an infiltration study of Al 2 O 3 samples containing, approximately, 40% of pores with 1μ average radios. These samples were totally infiltrated with Al-6061 at 1100 deg C for 24 hs in air. Microstructural analysis showed the presence of an alumina matrix infiltrated through mechanisms that combine reactive processes and capillarity, and thus being coherent with the presence of open and closed porosity. The metallographic analysis showed open porosity infiltrated with Al-6061 by capillarity, while SEM micrographs corresponding to this system also showed closed pores filled with metal, that was transported into the ceramic matrix through a reactivate infiltration mechanism. The EDAX analysis for the Al 2 O 3 /Al 6061 system showed areas rich in silicon and copper at the metal-ceramic interface, while the ceramic phase showed the presence of Mg. XRD identified the presence of the MgAl 2 O 4 spinel in the ceramic phase

  1. BF3/nano-γ-Al2O3 Promoted Knoevenagel Condensation at Room Temperature

    Directory of Open Access Journals (Sweden)

    B. F. Mirjalili

    2015-10-01

    Full Text Available The Knoevenagel condensation of aromatic aldehydes with barbituric acid, dimedone and malononitrile occurred in the presence of BF3/nano-γ-Al2O3 at room temperature in ethanol. This catalyst is characterized by powder X-ray diffraction (XRD, fourier transform infrared spectroscopy (FT-IR, thermal gravimetric analysis (TGA, field emission scanning electron microscopy (FESEM and energy-dispersive X-ray spectroscopy (EDS.

  2. Deactivation of a Co-Precipitated Co/Al2O3 Catalyst

    OpenAIRE

    YILDIZ, Meltem; AKIN, Ayşe Nilgün

    2007-01-01

    The effects of reaction temperature, feed ratio, space time, and CO percentage in feed on the deactivation conditions of a co-precipitated 36 wt% Co/Al2O3 catalyst in CO hydrogenation were investigated. Environmental-SEM-EDX and temperature-programmed reduction (TPR) studies were performed on used catalysts to investigate the effect of reaction conditions on catalyst deactivation. Intensive coke deposition on the catalyst was observed at a reaction temperature of about 573 K. Increas...

  3. Electrophoretic deposition and reaction-bond sintering of Al2O3/Ti ...

    Indian Academy of Sciences (India)

    pensions: Al2O3/Ti wt% = 3–7, 5–5, 7–3) to 100 ml mixed solvent containing butanol/ethanol (1–1). During the EPD process, a constant voltage of 50 V was applied by a power supply (Mastech, DC power supply HY30001E, 9225) for. 90 s. In order to increase the adhesion and density, and reduce the porosity of coatings, ...

  4. Preparation of Mo/Al2O3 Sulfide Catalysts Modified by Ir Nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Cinibulk, Josef; Vít, Zdeněk

    2002-01-01

    Roč. 143, - (2002), s. 443-451 ISSN 0167-2991. [International Symposium Scientific Bases for the Preparation of Heterogeneous Catalysts /8./. Louvain-la-Neuve, 09.09.2002-12.09.2002] R&D Projects: GA AV ČR IAA4072103 Keywords : catalysts modified * sulfide catalysts * Mo/Al2O3 Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.468, year: 2002

  5. Microstructural characterization in diffusion bonded TiC–Al2O3/Cr18 ...

    Indian Academy of Sciences (India)

    Unknown

    of characterization techniques such as scanning electron microscope (SEM) with energy dispersion spectro- scopy (EDS) and X-ray diffraction (XRD). The results indicate that Ti foil is fully fused to react with elements from substrates and Ti3Al, TiC and α-Ti are formed in the diffusion bonded TiC–Al2O3/Cr18–Ni8 joint. The.

  6. KINERJA KATALIS Ag/Al2O3 UNTUK REDUKSI NOx

    Directory of Open Access Journals (Sweden)

    Rakhman Sarwono

    2012-02-01

    Full Text Available NOx merupakan hasil samping dari suatu reaksi pembakaran. NOx merupakan gas yang beracun sangat berbahaya terhadap kesehatan manusia dan hewan bila terhirup pada waktu bernafas. Untuk mengurangi kadar NOx pada gas buang, banyak penelitian diarahkan pada reduksi NOx dengan katalis secara selektif dengan hidrokarbon dan oksigen berlebihan. Katalis yang digunakan adalah katalis alumina (Al2O3 yang didapat dari katalis komersial (AlO1-7 dan katalis hasil sintesa (ALOA. Katalis Ag/Al2O3 didapat dengan memasukkan logam Ag ke dalam alumina (Al2O3 dengan cara impregnasi dengan larutan perak nitrat. Katalis diuji aktifitasnya pada reaktor fixed bed yang diluarnya terdapat pemanas yang bisa diatur suhunya. Reaktan seperti gas NO, C2H4  dan oksigen dimasukkan kedalam reaktor dengan laju yang ditentukan. Hasil reaksi dianalisa dengan gas chromatography dan dicatat pada recorder, selanjutnya bisa ditentukan kuantitas dan prosentase konversinya. Katalis alumina  ALOA mempunyai kemampuan mereduksi NO dengan konversi  sekitar 40-45% gas NO menjadi N2. Loading logam perak (Ag kedalam Al2O3 sebesar 2-3% berat menambah daya reduksi NO menjadi sekitar 45-50% pada suhu 500oC. Pada umpan NO + C2H4  + O2  reaksi reduksi terjadi pada suhu 300oC, sedangkan pada umpan NO + C2H4   (tanpa oksigen reaksi reduksi baru terjadi pada suhu 450oC, dengan demikian adanya oksigen sangat berperan dalam proses reduksi NOx. Reaksi peruraian C2H4 menjadi COx berkebalikan dengan kinerja katalis pada proses reduksi NOx

  7. Computer simulation of the structural transformation in liquid Al2O3

    International Nuclear Information System (INIS)

    Vo Van Hoang; Oh, Suhk Kun

    2005-01-01

    We investigate the pressure-induced structural transformation in liquid Al 2 O 3 by a molecular dynamics (MD) method. Simulations were done in the basic cube, under periodic boundary conditions, containing 3000 ions with Born-Mayer-type pair potentials. The structure of the liquid Al 2 O 3 model with a real density at ambient pressure is in good agreement with Landron's experiment. In order to study the structural transformation, seven models of liquid alumina at temperature 2500 K and at densities in the range 2.80-4.5 g cm -3 have been built. The microstructure of Al 2 O 3 systems has been analysed through the pair radial distribution functions, coordination number distributions, interatomic distances and bond-angle distributions. And we found clear evidence of a structural transition in liquid alumina from a tetrahedral to an octahedral network. According to our results, this transformation occurred at densities in the range 3.6-4.5 g cm -3 . We also obtained an anomalous density dependence of the self-diffusion constant in the region of the structural transformation

  8. Hole centers in γ-irradiated, oxidized Al2O3

    International Nuclear Information System (INIS)

    Lee, K.H.; Holmberg, G.E.; Crawford, J.H. Jr.

    1976-01-01

    ESR observations of centers with S = 1/2, g approximately equal to 2, S = 1, g approximately equal to 2 have been made at 77 K on oxidized Al 2 O 3 after γ-irradiation at 30 0 C. From the radiation growth data, it is shown that the S = 1/2 centers are precursors of the S = 1 centers. In addition, when the S = 1 centers anneal out at about 110 0 C, the S = 1/2 centers reappear and eventually anneal out at about 260 0 C. Previously Gamble (Gamble, F.T.; Ph.D. Thesis, U. of Connecticut (1963)) and Cox (Cox, R.T.; Ph.D. Thesis, U. of Grenoble (1972) unpublished), respectively, observed S = 1/2 and S = 1 paramagnetic centers in electron-irradiated nominally pure Al 2 O 3 and γ-irradiated, oxidized, titanium-doped Al 2 O 3 . The models proposed for these centers were one hole and two holes trapped on oxygen ions adjacent to Al 3+ vacancies. Our results further substantiate these models. (author)

  9. Neutron irradiation damage in Al2O3 and Y2O3

    International Nuclear Information System (INIS)

    Clinard, F.W. Jr.; Bunch, J.M.; Ranken, W.A.

    1975-01-01

    Two ceramics under consideration for use in fusion reactors, Al 2 O 3 and Y 2 O 3 , were irradiated in the EBR-II fission reactor at 650, 875, and 1025 0 K to fluences between 2 and 6 x 10 21 n/cm 2 (E greater than 0.1 MeV). Samples evaluated include sapphire, Lucalox, alumina, Y 2 O 3 , and Y 2 O 3 -10 percent ZrO 2 (Yttralox). All Al 2 O 3 specimens swelled significantly (1 to 3 percent), with most of the growth observed in sapphire along the c-axis at the higher temperatures. Al 2 O 3 samples irradiated at 875 to 1025 0 K contained a high density of small aligned ''pores''. Irradiated Y 2 O 3 -based ceramics exhibited dimensional stability and a defect content consisting primarily of unresolved damage and/or dislocation loops. The behavior of these ceramics under irradiation is discussed, and the relevance of fission neutron damage studies to fusion reactor applications is considered. (auth)

  10. Workability and mechanical properties of ultrasonically cast Al–Al2O3 nanocomposites

    International Nuclear Information System (INIS)

    Mula, Suhrit; Pabi, S.K.; Koch, Carl C; Padhi, P.; Ghosh, S.

    2012-01-01

    Workability and mechanical properties of the ultrasonically cast Al–X wt% Al 2 O 3 (X=2, 3.57 and 4.69) metal matrix nanocomposites were reported in the present investigation. The Al–Al 2 O 3 (average size ∼10 nm) composites showed maximum reduction ratios of 2, 1.75 and 1.41 at room temperature, and 8, 7 and 6 at 300 °C. The elastic modulus, nanoindentation hardness, microhardness and Vickers hardness were measured on the as-cast, cold and hot rolled specimens. The tensile properties were also evaluated for the as-cast composites for different wt% of reinforcement. The microstructural examination was done by optical, scanning and transmission electron microscopy. The strength and workability of the nanocomposites were discussed in the light of dislocation/particle interaction, particle size and its concentration, inter-particle spacing and working temperature. 2 wt% of Al 2 O 3 reinforcement showed better combination of workability and mechanical properties possibly due to better distribution of particulates in the matrix.

  11. KINETIKA HIDRODESULFURISASI DIBENZOTHIOPHENE (HDS DBT MENGGUNAKAN KATALIS NiMo/γ-Al2O3

    Directory of Open Access Journals (Sweden)

    Subagjo Subagjo

    2014-12-01

    Full Text Available Evaluasi kinetika reaksi hidrodesulfurisasi (HDS dibenzothiophene dan simulasi nafta hydrotreater yang berada di PT. PERTAMINA Refinery Unit II Dumai menggunakan katalis NiMo/Al2O3 hasil pengembangan telah dilakukan. Kinetika reaksi HDS DBT dilakukan dalan sistem reaktor batch dengan variasi temperatur 280-320oC dan tekanan 30 bar. Data kinetika diolah dengan persamaan hukum pangkat (law power dan persamaan kinetik mekanistik (Langmuir Hinshelwood, LH. Berdasarkan model hukum pangkat, kinetika HDS DBT menggunakan NiMo/Al2O3 hasil pengembangan merupakan  orde satu  terhadap DBT dengan konstanta Arhenius  sebesar 165633 detik-1 dan energi aktivasi 69017 J/mol (16,56 kkal/mol. Model LH yang cocok untuk reaksi HDS DBT menggunakan NiMo/Al2O3 hasil pengembangan adalah model LH yang mengilustrasikan adanya kompetisi antara reaktan DBT dan H2 pada tipe pusat aktif yang sama, dengan DBT teradsorb secara kuat sedangkan H2 teradsorpsi secara lemah. Energi aktifasi dan konstanta Arhenius berdasarkan model LH ini ini berturut-turut adalah 81409 J/mol (19,34 kkal/mol dan 1658133 s-1. Dengan menggunakan persamaan laju reaksi hukum pangkat, model memberikan hasil konversi sulfur yang sama dengan hasil keluaran reaktor nafta hydrotreater RU II-Dumai, yaitu mencapai 98%.

  12. Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts

    Science.gov (United States)

    Guzmán-Caballero, D. E.; Quevedo-López, M. A.; De la Cruz, W.; Ramírez-Bon, R.

    2018-03-01

    SnO p-type was used as active layer to fabricate thin film transistors (TFTs) through photolithography and dry etching processes. The SnO p-type thin films (25 nm) were deposited by DC reactive sputtering with variable oxygen (O2) flow rate to then be annealed in air at 250 ◦C. Al2O3 gate dielectric (15 nm) was deposited by atomic layer deposition. Hall measurements showed p-type carrier concentration (N h ) of around 1 × 1018 cm‑3 and Hall mobilities (μ Hall) between 0.35 and 2.64 cm2 V‑1 s‑1, depending on the O2 flow rate during deposition. The hole transport was dominated by variable-range hopping conduction. A change in the preferred crystalline orientation in the SnO films from (101) to (110) was associated with the increase in μ Hall. In addition, Raman vibrational modes at 110 and 209 cm‑1 of polycrystalline SnO films showed certain dependence with the grain orientation. The SnO-based TFTs showed p-type behavior with low threshold voltages (V T ) and low sub threshold swing (SS) in the range from 1.76 to 3.50 V and 1.63 to 3.24 V/dec., respectively. The TFTs mobilities in the saturation regime (μ sat) were in the range of 0.12 and 1.32 cm2 V‑1 s‑1. The current on/off ratio (I ON/I OFF) was in the order of 102, approximately. The large values of the interface trap density (D IT) contributed to the high I OFF and the low I ON/I OFF of the TFTs.

  13. Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures

    International Nuclear Information System (INIS)

    Ivanov, P. A.; Potapov, A. S.; Nikolaev, A. E.; Lundin, V. V.; Sakharov, A. V.; Tsatsulnikov, A. F.; Afanas’ev, A. V.; Romanov, A. A.; Osachev, E. V.

    2015-01-01

    The capacitance-voltage characteristics of (Al/Ti)/Al 2 O 3 /n-GaN metal—insulator-semiconductor (MIS) structures are measured and analyzed. n-Type GaN films are grown on sapphire (0001) substrates by the metal-organic chemical vapor deposition method. An aluminum-oxide layer with a thickness of 60 nm is deposited onto the surface of GaN by the method of atomic-layer deposition from the gas phase. Metallic contacts are deposited by the electron-beam evaporation of titanium and aluminum in vacuum. According to the measurement results, the breakdown-field strength of the oxide, its dielectric constant, and the integrated electron density of states at the oxide-semiconductor interface are 5 × 10 6 V/cm, 7.5, and 3 × 10 12 cm −2 , respectively

  14. Remote plasma-assisted nitridation (RPN): applications to Zr and Hf silicate alloys and Al2O3

    International Nuclear Information System (INIS)

    Hinkle, Chris; Lucovsky, Gerry

    2003-01-01

    Remote plasma-assisted nitridation or RPN is demonstrated to be a processing pathway for nitridation of Zr and Hf silicate alloys, and for Al 2 O 3 , as well. The dependence of nitrogen incorporation on the process pressure is qualitatively similar to what has been reported for the plasma-assisted nitridation of SiO 2 , the lower the process pressure the greater the nitrogen incorporation in the film. The increased incorporation of nitrogen has been correlated with the penetration of the plasma-glow into the process chamber, and the accompanying increase in the concentration of N 2 + ions that participate in the reactions leading to bulk incorporation. The nitrogen incorporation as been studied by Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS) and X-ray absorption spectroscopy (XAS)

  15. Catalytic performance of Ag/Al2O3-C2H5OH-Cu/Al2O3 system for the removal of NOx from diesel engine exhaust.

    Science.gov (United States)

    Zhang, Changbin; He, Hong; Shuai, Shijin; Wang, Jianxin

    2007-05-01

    The selective catalytic reduction (SCR) of NOx by C(2)H(5)OH was studied in excess oxygen over Ag/Al(2)O(3) catalysts with different Ag loadings at lab conditions. The 4% Ag/Al(2)O(3) has the highest activity for the C(2)H(5)OH-SCR of NOx with a drawback of simultaneously producing CO and unburned THC in effluent gases. An oxidation catalyst 10% Cu/Al(2)O(3) was directly placed after the Ag/Al(2)O(3) to remove CO and unburned THC. Washcoated honeycomb catalysts were prepared based on the 4% Ag/Al(2)O(3) and 10% Cu/Al(2)O(3) powders and tested for the C(2)H(5)OH-SCR of NOx on a diesel engine at the practical operating conditions. Compared with the Ag/Al(2)O(3) powder, the Ag/Al(2)O(3) washcoated honeycomb catalyst (SCR catalyst) has a similar activity for NOx reduction by C(2)H(5)OH and the drawback of increasing the CO and unburned THC emissions. Using the SCR+Oxi composite catalyst with the optimization of C(2)H(5)OH addition, the diesel engine completely meets EURO III emission standards.

  16. Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control

    Science.gov (United States)

    Hayakawa, Naoki; Muneta, Iriya; Ohashi, Takumi; Matsuura, Kentaro; Shimizu, Jun’ichi; Kakushima, Kuniyuki; Tsutsui, Kazuo; Wakabayashi, Hitoshi

    2018-04-01

    Molybdenum disulfide (MoS2) among two-dimensional semiconductor films is promising for spintronic devices because it has a longer spin-relaxation time with contrasting spin splitting than silicon. However, it is difficult to fabricate integrated circuits by the widely used exfoliation method. Here, we investigate the contact characteristics in the Fe/Al2O3/sputtered-MoS2 system with various thicknesses of the Al2O3 film. Current density increases with increasing thickness up to 2.5 nm because of both thermally-assisted and direct tunneling currents. On the other hand, it decreases with increasing thickness over 2.5 nm limited by direct tunneling currents. These results suggest that the Schottky barrier width can be controlled by changing thicknesses of the Al2O3 film, as supported by calculations. The reduction of conductance mismatch with this technique can lead to highly efficient spin injection from iron into the MoS2 film.

  17. Properties of CdTe nanocrystalline thin films grown on different substrates by low temperature sputtering

    International Nuclear Information System (INIS)

    Chen Huimin; Guo Fuqiang; Zhang Baohua

    2009-01-01

    CdTe nanocrystalline thin films have been prepared on glass, Si and Al 2 O 3 substrates by radio-frequency magnetron sputtering at liquid nitrogen temperature. The crystal structure and morphology of the films were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The XRD examinations revealed that CdTe films on glass and Si had a better crystal quality and higher preferential orientation along the (111) plane than the Al 2 O 3 . FESEM observations revealed a continuous and dense morphology of CdTe films on glass and Si substrates. Optical properties of nanocrystalline CdTe films deposited on glass substrates for different deposited times were studied.

  18. Electrochemical promotion of propane oxidation on Pt deposited on a dense β″-Al2O3 ceramic Ag+ conductor

    Science.gov (United States)

    Tsampas, Mihalis N.; Kambolis, Anastasios; Obeid, Emil; Lizarraga, Leonardo; Sapountzi, Foteini M.; Vernoux, Philippe

    2013-01-01

    A new kind of electrochemical catalyst based on a Pt porous catalyst film deposited on a β″-Al2O3 ceramic Ag+ conductor was developed and evaluated during propane oxidation. It was observed that, upon anodic polarization, the rate of propane combustion was significantly electropromoted up to 400%. Moreover, for the first time, exponential increase of the catalytic rate was evidenced during galvanostatic transient experiment in excellent agreement with EPOC equation. PMID:24790942

  19. A nanoplate-like α-Al2O3 out-layered Al2O3-ZrO2 coating fabricated by micro-arc oxidation for hip joint prosthesis

    Science.gov (United States)

    Zhang, Lan; Zhang, Wenting; Han, Yong; Tang, Wu

    2016-01-01

    A nanoplate-like α-Al2O3 out-layered Al2O3-ZrO2 coating was fabricated on Zr substrate by micro-arc oxidation (MAO). The structure, formation mechanism, anti-wear property and aging behavior of the coating were explored. The obtained results show that the coating is composed of Al2O3 and ZrO2; the amount and crystallinity of Al2O3 increase gradually from inner layer to the coating surface; monoclinic ZrO2 (m-ZrO2) and tetragonal ZrO2 (t-ZrO2) are both present in the coating, and the ratio of t-ZrO2/m-ZrO2 increases with closing to the coating surface by a "constraint" mechanism of Al2O3; the coating surface mainly consists of nanoplate-like α-Al2O3, and a small amount of nanocrystallized m- and t-ZrO2. The superimposition of α-Al2O3 growth unit on {0 0 0 1} face should be prohibited by PO43- during the MAO process, resulting in the formation of nanoplate-like α-Al2O3 on the coating surface. Compared with pure Zr, the coating shows noticeable improvement in wear-resistance. For aging behavior, although more t-ZrO2 in the coating is transformed to m-ZrO2 with increasing aging time, wear loss increases slightly. It indicates that the nanoplate-like α-Al2O3 out-layered Al2O3-ZrO2 is a potential coating for articular head replacement.

  20. Effect of coating thickness on microstructure and low temperature cyclic thermal fatigue behavior of thermal barrier coating (Al2O3)

    Science.gov (United States)

    Verma, Vijay; Patel, Sachin; Swarnkar, Vikas; K, Rajput S.

    2018-03-01

    Effect of coating thickness on low temperature cyclic thermal fatigue behaviour of Al2O3 thermal barrier coating (TBC) was concluded through the cyclic furnace thermal fatigue test (CFTF). Detonation gun (Thermal Spray) process was used for bond coating of NiCr and top coating of Al2O3 on Aluminium Alloy 6061 substrate. Top coating was done at two level of thickness to investigate the effect of coating thickness on low temperature cyclic thermal fatigue. The top coat of thickness 100μm-150μm was considered as thin TBC while the top coat of thickness 250μm-300μm was considered as thick TBC. The thickness of bond coat was taken as 120μm constant for both level of Al2O3 top coating. During CFTF test appearance of any crack on coated surface was adapted as main criterion of coating failure. Crack initiation was observed at edges and corner of thin thermal barrier coating after 60 number of thermal fatigue cycles while in case of thick thermal barrier coating these crack initiation was observed after 72 cycles of cyclic thermal fatigue test. During the study, it was observed that thick thermal barrier coating survived for long duration in comparison of thin TBC. Hence it can be concluded that application of thick TBC is more favourable to improve thermal durability of any component.

  1. thin films

    Indian Academy of Sciences (India)

    The anionic precursor was 1% H2O2 solution. Both the cationic and anionic precursors were kept at room temperature (∼300 K). One SILAR cycle consists of two steps: (i) adsorption of Sn4+ ions on the substrate surface for 20 s and (ii) reaction with H2O2 solution for 40 s to form stable SnO2:H2O thin film on the substrate.

  2. WOx supported on γ-Al2O3 with different morphologies as model catalysts for alkanol dehydration

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Dachuan; Wang, Huamin; Kovarik, Libor; Gao, Feng; Wan, Chuan; Hu, Jian Z.; Wang, Yong

    2018-04-21

    The distinctive morphological and surface characteristics of platelet-like γ-Al2O3 were compared to a regular, commercial γ-Al2O3. γ-Al2O3 platelets display dominant (110) surface facets and higher densities of coordinative unsaturated penta-coordinate Al3+ (Al3+penta) sites than regular γ-Al2O3, as measured by solid-state magic-angle spinning nuclear magnetic resonance spectroscopy (MAS NMR). Such Al3+penta sites are also the preferred surface anchoring sites for tungsten oxide (WOx) species consistent with NMR analysis indicating that these sites are consumed upon WOx adsorption. The higher Al3+penta density on γ-Al2O3 platelets leads to greater WOx dispersion (or smaller WOx clusters), as demonstrated by scanning transmission electron microscopy and ultraviolet–visible spectroscopy, and WOx species at intermediate WOx surface concentration are the most active for the probe reaction of 2-butanol dehydration. WOx on γ-Al2O3 platelets approaches the highest turnover rates at higher surface densities than WOx on regular γ-Al2O3, yet with similar highest rate values for both series of catalysts. This indicates that different Al2O3 supports mainly affect the dispersion of supported WOx rather than the intrinsic reactivity of individual WOx clusters with similar size.

  3. Influence of different acid etchings on the superficial characteristics of Ti sandblasted with Al2O3

    Directory of Open Access Journals (Sweden)

    Bruno Ramos Chrcanovic

    2013-01-01

    Full Text Available Some implant manufactures use Al2O3 instead TiO2 powder to sandblast the machined dental implant, because Al2O3 powder is commercially more easily available and is cheaper than TiO2 powder. However, Al2O3 powder usually leaves aluminum oxide contamination on the surface, which is potentially toxic. In this work, we subjected Ti discs previously sandblasted with Al2O3 powder to 5 different acid etchings in order to verify which treatment is able to remove incorporated particles of Al2O3 from the surface. One group of samples were only sandblasted and served as control. The samples were analyzed by electron microscopy (SEM, EDS, scanning probe microscopy, and grazing incidence XRD. The control group showed presence of Al2O3 on the surface. Three acid etchings were efficient in removing the alumina from the tested samples. Almost all the tested samples showed higher roughness parameters values than the control samples. Titanium hydride was found in almost all test groups. Moreover, the results suggest that there is no incorporation of the whole Al2O3 particle into the titanium surface after the collision, conversely a particle fragmentation occurs and what remains on the titanium surface are Al2O3 residues.

  4. Formation of a 25 mol% Fe2O3-Al2O3 solid solution prepared by ball milling

    DEFF Research Database (Denmark)

    Jiang, Jianzhong; Mørup, Steen; Linderoth, Søren

    1996-01-01

    The phase transformation process of a 25 mol% Fe2O3-Al2O3 powder mixture during high-energy ball milling has been studied by x-ray diffraction and Mossbauer spectroscopy. A metastable solid solution of 25 mol % Fe2O3 in Al2O3 with corundum structure has successfully been prepared after a milling...

  5. Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS—HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yao; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Xue Jun-Shuai; Ma Xiao-Hua; Wang Chong; Yang Lin-An; Zhang Jin-Feng; Kuang Xian-Wei; Yang Cui

    2011-01-01

    We present an AlInN/AlN/GaN MOS—HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al 2 O 3 dielectric layer and a 0.3 μm field-plate (FP)-MOS—HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS—HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS—HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance—voltage (C—V) curve of the FP-MOS—HEMT demonstrates a high-quality interface of Al 2 O 3 /AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μm and a negligible double-pulse current collapse is achieved in the FP-MOS—HEMT. This is attributed to the adoption of an ultra-thin Al 2 O 3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al 2 O 3 FP-MOS—HEMT to deliver high currents and power densities in high power microwave technologies. (rapid communication)

  6. Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS—HEMT

    Science.gov (United States)

    Mao, Wei; Yang, Cui; Hao, Yao; Zhang, Jin-Cheng; Liu, Hong-Xia; Bi, Zhi-Wei; Xu, Sheng-Rui; Xue, Jun-Shuai; Ma, Xiao-Hua; Wang, Chong; Yang, Lin-An; Zhang, Jin-Feng; Kuang, Xian-Wei

    2011-01-01

    We present an AlInN/AlN/GaN MOS—HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al2O3 dielectric layer and a 0.3 μm field-plate (FP)-MOS—HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS—HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS—HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance—voltage (C—V) curve of the FP-MOS—HEMT demonstrates a high-quality interface of Al2O3/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μm and a negligible double-pulse current collapse is achieved in the FP-MOS—HEMT. This is attributed to the adoption of an ultra-thin Al2O3 gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al2O3 FP-MOS—HEMT to deliver high currents and power densities in high power microwave technologies.

  7. Synthesis and characterization of high volume fraction Al-Al2O3 nanocomposite powders by high-energy milling

    International Nuclear Information System (INIS)

    Prabhu, B.; Suryanarayana, C.; An, L.; Vaidyanathan, R.

    2006-01-01

    Al-Al 2 O 3 metal matrix composite (MMC) powders with volume fractions of 20, 30, and 50% Al 2 O 3 were synthesized by high-energy milling of the blended component powders. The particle sizes of Al 2 O 3 studied were 50 nm, 150 nm, and 5 μm. A uniform distribution of the Al 2 O 3 reinforcement in the Al matrix was successfully obtained after milling the powders for a period of 20 h at a ball-to-powder ratio of 10:1 in a SPEX mill. The uniform distribution of Al 2 O 3 in the Al matrix was confirmed by characterizing these nanocomposite powders by scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), X-ray mapping, and X-ray diffraction (XRD) techniques

  8. Characteristics of Cu–Al2O3 composites of various starting particle size obtained by high-energy milling

    Directory of Open Access Journals (Sweden)

    VIŠESLAVA RAJKOVIĆ

    2009-05-01

    Full Text Available The powder Cu– Al2O3 composites were produced by high-energy milling. Various combinations of particle size and mixtures and approximately constant amount of Al2O3 were used as the starting materials. These powders were separately milled in air for up to 20 h in a planetary ball mill. The copper matrix was reinforced by internal oxidation and mechanical alloying. During the milling, internal oxidation of pre-alloyed Cu-2 mass %-Al powder generated 3.7 mass % Al2O3 nano-sized particles finely dispersed in the copper matrix. The effect of different size of the starting copper and Al2O3 powder particles on the lattice parameter, lattice distortion and grain size, as well as on the size, morphology and microstructure of the Cu– Al2O3 composite powder particles was studied.

  9. NMR Spectroscopy of the Hydrated Layer of Composite Particles Based on Nanosized Al2O3 and Vitreous Humor

    Science.gov (United States)

    Turov, V. V.; Gerashchenko, I. I.; Markina, A. I.

    2013-11-01

    The hydrated layer of composite particles prepared using Al2O3 and cattle vitreous humor was investigated using NMR spectroscopy. It was found that water bound to Al2O3 nanoparticles was present in the form of clusters with different degrees of association and energies of interaction with the surface. Water bound to the surface of the Al2O3/vitreous humor composite became more uniform upon immobilization of vitreous humor components on the surface of the Al2O3. With this, the clusters of adsorbed water had characteristics that were close to those found in air and weakly polar CHCl3 media. Addition of polar CH3CN led to the formation of very small water clusters. PMR spectra of the surface of the Al2O3/vitreous humor composite in the presence of trifluoroacetic acid differentiated four types of hydrated structures that differed in the degree of water association.

  10. The Viscous Behavior of FeOt-Al2O3-SiO2 Copper Smelting Slags

    Science.gov (United States)

    Park, Hyun-Shik; Park, Su Sang; Sohn, Il

    2011-08-01

    Understanding the viscous behavior of copper smelting slags is essential in increasing the process efficiency and obtaining the discrete separation between the matte and the slag. The viscosity of the FeOt-SiO2-Al2O3 copper smelting slags was measured in the current study using the rotating spindle method. The viscosity at a fixed Al2O3 concentration decreased with increasing Fe/SiO2 ratio because of the depolymerization of the molten slag by the network-modifying free oxygen ions (O2-) supplied by FeO. The Fourier transform infrared (FTIR) analyses of the slag samples with increasing Fe/SiO2 ratio revealed that the amount of large silicate sheets decreased, whereas the amount of simpler silicate structures increased. Al2O3 additions to the ternary FeOt-SiO2-Al2O3 slag system at a fixed Fe/SiO2 ratio showed a characteristic V-shaped pattern, where initial additions decreased the viscosity, reached a minimum, and increased subsequently with higher Al2O3 content. The effect of Al2O3 was considered to be related to the amphoteric behavior of Al2O3, where Al2O3 initially behaves as a basic oxide and changes to an acidic oxide with variation in slag composition. Furthermore, Al2O3 additions also resulted in the high temperature phase change between fayalite/hercynite and the modification of the liquidus temperature with Al2O3 additions affecting the viscosity of the copper smelting slag.

  11. Strength and thermal stability of Cu-Al2O3 composite obtained by internal oxidation

    Directory of Open Access Journals (Sweden)

    Jovanovic, M. T.

    2010-12-01

    Full Text Available The objective of the work is to study the effects of the high-energy milling on strengthening, thermal stability and electrical conductivity of Cu-Al2O3 composite. The prealloyed copper powders, atomized in inert gas and containing 3 wt. % Al, were milled up to 20 h in the planetary ball mill to oxidize in situ aluminium with oxygen from the air. Composite compacts were obtained by hot-pressing in an argon atmosphere at 800 °C for 3 h under the pressure of 35MPa. The microstructural characterization was performed by the optical microscope, scanning electron microscope (SEM, transmission electron microscope (TEM and X-ray diffraction analysis (XRD. The microhardness, electrical conductivity and density measurements were also carried out. The effect of internal oxidation and high-energy milling on strengthening of Cu-Al2O3 composite was significant, The increase of the microhardness of composite compacts (292 HV is almost threefold comparing to compacts processed from the as-received Cu-3 wt. % Al powder (102 HV. The grain size of Cu-Al2O3 compacts processed from 5 and 20 h-milled powders was 75 and 45 nm, respectively. The small increase in the grain size and the small microhardness drop indicate the high thermal stability of Cu-Al2O3 composite during high-temperature exposure at 800 °C.El objetivo del trabajo es el estudio de los efectos de la pulverización con altas energías sobre la resistencia, estabilidad térmica y conductividad eléctrica del compuesto Cu-Al2O3. El polvo pre-aleado de cobre, obtenido a través de la atomización con gas inerte y con un contenido de 3wt. % Al, se molió durante 20 h en el molino planetario de bolas dando lugar a la oxidación in situ del aluminio con el oxígeno del aire. El compuesto compactado se ha obtenido mediante prensado en caliente en atmósfera de argón a 800 °C durante 3 h y a una presión de 35MPa. La caracterización microestructural se hizo a través de microscopia óptica, microscopia

  12. UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

    Directory of Open Access Journals (Sweden)

    Schutz-Kuchly T.

    2014-01-01

    Full Text Available Experimental work on laser induced ablation of thin Al2O3(20 nm/SiN:H (70 nm and a-Si:H (20 nm/SiN:H (70 nm stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are efficiently removed using a femtosecond infra-red laser (1030 nm wavelength, 300 fs pulse duration but the underlying silicon surface is highly damaged in a ripple-like pattern. This collateral effect is almost completely avoided using a nanosecond ultra-violet laser (248 nm wavelength, 50 ns pulse duration, however a-Si:H flakes and Al2O3 lace remain after ablation process.

  13. Testing of Flame Sprayed Al2O3 Matrix Coatings Containing TiO2

    Directory of Open Access Journals (Sweden)

    Czupryński A.

    2016-09-01

    Full Text Available The paper presents the results of the properties of flame sprayed ceramic coatings using oxide ceramic materials coating of a powdered aluminium oxide (Al2O3 matrix with 3% titanium oxide (TiO2 applied to unalloyed S235JR grade structural steel. A primer consisting of a metallic Ni-Al-Mo based powder has been applied to plates with dimensions of 5×200×300 mm and front surfaces of Ø40×50 mm cylinders. Flame spraying of primer coating was made using a RotoTec 80 torch, and an external coating was made with a CastoDyn DS 8000 torch. Evaluation of the coating properties was conducted using metallographic testing, phase composition research, measurement of microhardness, substrate coating adhesion (acc. to EN 582:1996 standard, erosion wear resistance (acc. to ASTM G76-95 standard, and abrasive wear resistance (acc. to ASTM G65 standard and thermal impact. The testing performed has demonstrated that flame spraying with 97% Al2O3 powder containing 3% TiO2 performed in a range of parameters allows for obtaining high-quality ceramic coatings with thickness up to ca. 500 µm on a steel base. Spray coating possesses a structure consisting mainly of aluminium oxide and a small amount of NiAl10O16 and NiAl32O49 phases. The bonding primer coat sprayed with the Ni-Al-Mo powder to the steel substrate and external coating sprayed with the 97% Al2O3 powder with 3% TiO2 addition demonstrates mechanical bonding characteristics. The coating is characterized by a high adhesion to the base amounting to 6.5 MPa. Average hardness of the external coating is ca. 780 HV. The obtained coatings are characterized by high erosion and abrasive wear resistance and the resistance to effects of cyclic thermal shock.

  14. Microstructural Investigations of Al2O3 Scale Formed on FeCrAl Steel during High Temperature Oxidation in SO2

    International Nuclear Information System (INIS)

    Homa, M.; Zurek, Z.; Morgiel, B.; Zieba, P.; Wojewoda, J.

    2008-01-01

    The results of microstructure observations of the Al 2 O 3 scale formed on a Fe-Cr-Al steel during high temperature oxidation in the SO 2 atmosphere are presented. Morphology of the scale has been studied by SEM and TEM techniques. Phase and chemical compositions have been studied by EDX and XRD techniques. The alumina oxide is a primary component of the scale. TEM observations showed that the scale was multilayer. The entire surface of the scale is covered with 'whiskers, which look like very thin platelets and have random orientation. The cross section of a sample shows, that the 'whiskers' are approximately 2 μm high, however the compact scale layer on which they reside is 0.2 μm thick. The scale layer was composed mainly of small equiaxial grains and a residual amount of small columnar grains. EDX analysis of the scale surface showed that the any sulfides were found in the formed outer and thin inner scale layer. A phase analysis of the scale formed revealed that it is composed mainly of the θ-Al 2 O 3 phase and a residual amount of α-Al 2 O 3

  15. Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation

    Science.gov (United States)

    Schuldis, D.; Richter, A.; Benick, J.; Saint-Cast, P.; Hermle, M.; Glunz, S. W.

    2014-12-01

    This work presents a detailed study of c-Si/Al2O3 interfaces of ultrathin Al2O3 layers deposited with atomic layer deposition (ALD), and capped with SiNx layers deposited with plasma-enhanced chemical vapor deposition. A special focus was the characterization of the fixed charge density of these dielectric stacks and the interface defect density as a function of the Al2O3 layer thickness for different ALD Al2O3 deposition processes (plasma-assisted ALD and thermal ALD) and different thermal post-deposition treatments. Based on theoretical calculations with the extended Shockley-Read-Hall model for surface recombination, these interface properties were found to explain well the experimentally determined surface recombination. Thus, these interface properties provide fundamental insights into to the passivation mechanisms of these Al2O3/SiNx stacks, a stack system highly relevant, particularly for high efficiency silicon solar cells. Based on these findings, it was also possible to improve the surface passivation quality of stacks with thermal ALD Al2O3 by oxidizing the c-Si surface prior to the Al2O3 deposition.

  16. Pengaruh komposisi komposit al2o3/ysz dan variasi feed rate terhadap ketahanan termal dan kekuatan lekat pada Ysz-al2o3/ysz double layer tbc

    Directory of Open Access Journals (Sweden)

    Parindra Kusriantoko

    2014-03-01

    Full Text Available TBC (Thermal Barrier Coating dengan YSZ-Al2O3/YSZ top coat (TCdan MCrAlY sebagai bond coat (BC yang selanjutnya disebut sebagai YSZ-Al2O3/YSZ double layer TBC dibuat dengan menggunakan metode flame spray.Hasil pelapisan sebelum dan sesudah diuji termal dikarakterisasi menggunakan SEM, EDX dan XRD.Dari hasil penelitian didapatkan bahwa semakin tinggi powder feed rate akan berpengaruh pada morfologi permukaan lapisan. Feed rate makin rendah menyebabkan struktur yang cenderung kasar dan tidak padat dan cenderung berporos. Lapisan komposit Al2O3/YSZ juga sangat berpengaruh pada pertumbuhan TGO (Thermally Grown Oxide setelah dilakukan uji termal, dimana komposisi paling bagus dengan pertumbuhan TGO paling rendah adalah 15%Al2O3/8YSZ. Hasil pengujian TGA menunjukkan semua sampel mulai teroksidasi pada temperatur 1000-1030oC dan didapatkan sampel paling stabil adalah 15% Al2O3/8YSZ 14 dan 20 gr/min. Dari pengujian XRD sampel yang memiliki fasa yang paling stabil adalah 15%Al2O3/8YSZ dengan fasa t-ZrO2 dan m-ZrO2. Dari pengujian Thermal Torch dan Pull Off komposisi 15%Al2O3/8YSZjuga memiliki ketahanan terhadap pengerusakan yang paling baik dan kelekatan yang baik sebesar 10 MPa.

  17. Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices.

    Science.gov (United States)

    Negara, M A; Kitano, M; Long, R D; McIntyre, P C

    2016-08-17

    Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is investigated as a path to achieve enhancement mode GaN device operation. A uniform distribution of nitrogen across the resulting AlOxNy films is obtained using N2 plasma enhanced atomic layer deposition (ALD). The flat band voltage (Vfb) increases to a significantly more positive value with increasing nitrogen concentration. Insertion of a 2 nm thick Al2O3 interlayer greatly decreases the trap density of the insulator/GaN interface, and reduces the voltage hysteresis and frequency dispersion of gate capacitance compared to single-layer AlOxNy gate insulators in GaN MOSCAPs.

  18. Characterization of Ball Milled Al-Al2O3 sub-micron Composites

    Science.gov (United States)

    Dagasan, E.; Gercekcioglu, E.; Unalan, S.

    2018-01-01

    The purpose of this study is to investigate properties of the composite powders produced by ball milling process. Different weight ratio of high purity Al2O3 powders were added to the Al matrix as reinforcing element. Ball milling process was conducted by a planetary type ball mill with WC milling balls and vial at constant parameters like rotating speed, time, Ball-to-Powder ratio and Process Control Agent. Samples that taken from the powder mixtureby various time intervals were analyzed by SEM, XRD and BET surface area and porosity measurement systems.

  19. Ultrasonic Al2O3 Ceramic Thermometry in High-Temperature Oxidation Environment

    Directory of Open Access Journals (Sweden)

    Yanlong Wei

    2016-11-01

    Full Text Available In this study, an ultrasonic temperature measurement system was designed with Al2O3 high-temperature ceramic as an acoustic waveguide sensor and preliminarily tested in a high-temperature oxidation environment. The test results indicated that the system can indeed work stably in high-temperature environments. The relationship between the temperature and delay time of 26 °C–1600 °C ceramic materials was also determined in order to fully elucidate the high-temperature oxidation of the proposed waveguide sensor and to lay a foundation for the further application of this system in temperatures as high as 2000 °C.

  20. Improved real-time dosimetry using the radioluminescence signal from Al2O3:C

    DEFF Research Database (Denmark)

    Damkjær, Sidsel Marie Skov; Andersen, Claus Erik; Aznar, Marianne

    2008-01-01

    15th International Conference on Solid State Dosimetry Location: Delft Univ Technol, Delft, NETHERLANDS Date: JUL 08-13, 2007 Abstract: Carbon-doped aluminum oxide (Al2O3:C) is a highly sensitive luminescence material for ionizing radiation dosimetry, and it is well established that the optically...... to greatly reduce the influence of shallow traps in the range from 0 to 3 Gy and the RL dose-rate measurements with a time resolution of 0. 1 s closely matched dose-rate changes monitored with in ionization chamber. (c) 2007 Elsevier Ltd. All rights reserved....

  1. Hydrogen Production via Glycerol Dry Reforming over La-Ni/Al2O3 Catalyst

    Directory of Open Access Journals (Sweden)

    Kah Weng Siew

    2013-12-01

    Full Text Available Glycerol (a bio-waste generated from biodiesel production has been touted as a promising bio-syngas precursor via reforming route. Previous studies have indicated that carbon deposition is the major performance-limiting factor for nickel (Ni catalyst during glycerol steam reforming. In the current paper, dry (CO2-reforming of glycerol, a new reforming route was carried out over alumina (Al2O3-supported non-promoted and lanthanum-promoted Ni catalysts. Both sets of catalysts were synthesized via wet co-impregnation procedure. The physicochemical characterization of the catalyst showed that the promoted catalyst possessed smaller metal crystallite size, hence higher metal dispersion compared to the virgin Ni/Al2O3 catalyst. This was also corroborated by the surface images captured by the FESEM analysis. In addition, BET surface area measurement gave 92.05m²/g for non-promoted Ni catalyst whilst promoted catalysts showed an average of 1 to 6% improvement depending on the La loading. Reaction studies at 873 K showed that glycerol dry reforming successfully produced H2 with glycerol conversion and H2 yield that peaked at 9.7% and 25% respectively over 2wt% La content. The optimum catalytic performance by 2%La-Ni/Al2O3 can be attributed to the larger BET surface area and smaller crystallite size that ensured accessibility of active catalytic sites.  © 2013 BCREC UNDIP. All rights reservedReceived: 12nd May 2013; Revised: 7th October 2013; Accepted: 16th October 2013[How to Cite: Siew, K.W., Lee, H.C., Gimbun, J., Cheng, C.K. (2013. Hydrogen Production via Glycerol Dry Reforming over La-Ni/Al2O3 Catalyst. Bulletin of Chemical Reaction Engineering & Catalysis, 8 (2: 160-166. (doi:10.9767/bcrec.8.2.4874.160-166][Permalink/DOI: http://dx.doi.org/10.9767/bcrec.8.2.4874.160-166

  2. High strength Al–Al2O3p composites: Optimization of extrusion parameters

    DEFF Research Database (Denmark)

    Luan, B.F.; Hansen, Niels; Godfrey, A.

    2011-01-01

    . The parameters investigated are the extrusion temperature, the extrusion rate and the extrusion ratio. The materials chosen are AA 2024 and AA 6061, each reinforced with 30vol.% Al2O3 particles of diameter typically in the range from 0.15 to 0.3μm. The extruded composites have been evaluated based...... on an investigation of their mechanical properties and microstructure, as well as on the surface quality of the extruded samples. The evaluation shows that material with good strength, though with limited ductility, can be reliably obtained using a production route of squeeze casting, followed by hot extrusion...

  3. Thermal conductivity measurements of PTFE and Al2O3 ceramic at sub-Kelvin temperatures

    Science.gov (United States)

    Drobizhev, Alexey; Reiten, Jared; Singh, Vivek; Kolomensky, Yury G.

    2017-07-01

    The design of low temperature bolometric detectors for rare event searches necessitates careful selection and characterization of structural materials based on their thermal properties. We measure the thermal conductivities of polytetrafluoroethylene (PTFE) and Al2O3 ceramic (alumina) in the temperature ranges of 0.17-0.43 K and 0.1-1.3 K, respectively. For the former, we observe a quadratic temperature dependence across the entire measured range. For the latter, we see a cubic dependence on temperature above 0.3 K, with a linear contribution below that temperature. This paper presents our measurement techniques, results, and theoretical discussions.

  4. CW-OSL measurement protocols using optical fibre Al2O3:C dosemeters

    DEFF Research Database (Denmark)

    Edmund, J.M.; Andersen, C.E.; Marckmann, C.J.

    2006-01-01

    A new system for in vivo dosimetry during radiotherapy has been introduced. Luminescence signals from a small crystal of carbon-doped aluminium oxide (Al2O3:C) are transmitted through an optical fibre cable to an instrument that contains optical filters, a photomultiplier tube and a green (532 nm......) laser. The prime output is continuous wave optically stimulated luminescence (CW-OSL) used for the measurement of the integrated dose. We demonstrate a measurement protocol with high reproducibility and improved linearity, which is suitable for clinical dosimetry. A crystal-specific minimum pre...

  5. Catalytic reduction of N2O over Ag-Pd/Al2O3 bimetallic catalysts.

    Science.gov (United States)

    Tzitzios, V K; Georgakilas, V

    2005-05-01

    A study of the catalytic conversion of N2O to N2 over a bimetallic Ag-Pd catalyst is described in this article. Several Ag-Pd catalytic systems were prepared supported on Al2O3 with different ratios and their catalytic activity for the direct decomposition of N2O and their reduction with CO was measured. Based on the experimental results, it was observed that Ag-Pd bimetallic catalyst (5-0.5%) was the most active for both nitrous oxide reduction and direct decomposition. This high activity seems to be connected with a synergistic effect between Ag and Pd.

  6. Structure and phase transitions at the interface between α-Al2O3 and Pt

    Science.gov (United States)

    Ophus, Colin; Santala, Melissa K.; Asta, Mark; Radmilovic, Velimir

    2013-06-01

    The structure and thermodynamics of interfaces between (111) Pt and the basal plane of α-Al2O3 have been studied through a combination of high-resolution electron microscopy and first-principles calculations. Within the framework of ab initio thermodynamics the structure and excess free energies are calculated as functions of temperature (T) and oxygen partial pressure (PO2), for three competing interface terminations. Comparisons between measurements and calculations establish that the interface is oxygen terminated, and a structural phase transition is predicted in the range of experimentally accessible T and PO2 from the calculated interfacial free energies.

  7. Guiding of low-energy electrons by highly ordered Al2 O3 nanocapillaries

    DEFF Research Database (Denmark)

    Milosavljević, A.R.; Víkor, G.; Pešić, Z.D.

    2007-01-01

    We report an experimental study of guided transmission of low-energy (200-350 eV) electrons through highly ordered Al2 O3 nanocapillaries with large aspect ratio (140 nm diameter and 15 μm length). The nanochannel array was prepared using self-ordering phenomena during a two-step anodization...... process of a high-purity aluminum foil. The experimental results clearly show the existence of the guiding effect, as found for highly charged ions. The guiding of the electron beam was observed for tilt angles up to 12°. As seen for highly charged ions, the guiding efficiency increases with decreasing...

  8. Kinetics of the electronic center annealing in Al2O3 crystals

    Science.gov (United States)

    Kuzovkov, V. N.; Kotomin, E. A.; Popov, A. I.

    2018-04-01

    The experimental annealing kinetics of the primary electronic F, F+ centers and dimer F2 centers observed in Al2O3 produced under neutron irradiation were carefully analyzed. The developed theory takes into account the interstitial ion diffusion and recombination with immobile F-type and F2-centers, as well as mutual sequential transformation with temperature of three types of experimentally observed dimer centers which differ by net charges (0, +1, +2) with respect to the host crystalline sites. The relative initial concentrations of three types of F2 electronic defects before annealing are obtained, along with energy barriers between their ground states as well as the relaxation energies.

  9. Micro-nanocomposites Al2O3/ NbC/ WC and Al2O3/ NbC/ TaC

    International Nuclear Information System (INIS)

    Santos, Thais da Silva

    2014-01-01

    Alumina based ceramics belong to a class of materials designated as structural, which are widely used in cutting tools. Although alumina has good properties for application as a structural ceramics, composites with different additives have been produced with the aim of improving its fracture toughness and mechanical strength. New studies point out micro-nanocomposites, wherein the addition of micrometric particles should enhance mechanical strength, and nano-sized particles enhance fracture toughness. In this work, alumina based micro nanocomposites were obtained by including nano-sized NbC and micrometer WC particles at 2:1, 6:4, 10:5 and 15:10 vol% proportions, and also with the inclusion of nano-sized NbC and micrometer TaC particles at 2:1 vol% proportion. For the study of densification, micro-nanocomposites were sintered in a dilatometer with a heating rate of 20°C/min until a temperature of 1800°C in argon atmosphere. Based on the dilatometry results, specimens were sintered in a resistive graphite furnace under argon atmosphere between 1500°C and 1700°C by holding the sintering temperature for 30 minutes. Densities, crystalline phases, hardness and tenacity were determined, and micro-nanocomposites microstructures were analyzed. The samples Al 2 O 3 : NbC: TaC sintered at 1700 ° C achieved the greater apparent density (~ 95% TD) and the sample sintered at 1600 ° C showed homogeneous microstructure and increased hardness value (15.8 GPa) compared to the pure alumina . The compositions with 3% inclusions are the most promising for future applications. (author)

  10. Controlled High Filler Loading of Functionalized Al2O3-Filled Epoxy Composites for LED Thermal Management

    Science.gov (United States)

    Permal, Anithambigai; Devarajan, Mutharasu; Hung, Huong Ling; Zahner, Thomas; Lacey, David; Ibrahim, Kamarulazizi

    2018-03-01

    Thermal management in light-emitting diode (LED) has been extensively researched recently. This study is intended to develop an effective thermally conductive epoxy composite as thermal interface material (TIM) for headlamp LEDs. Silane-functionalized aluminum oxide (Al2O3) powder of different average particle sizes (44 and 10 µm) was studied for its feasibility as filler at its maximum loading. A detailed comparison of three different methods of particle dispersions, hand-mix, speed-mix and calendaring process (3-roll mill), has been reported. The dispersion of Al2O3 particles, the thermal conductivity and thermal degradation characteristics of the composites were investigated and explained in detail. At 75 wt.% filler loading, 10 and 44 µm Al2O3 achieved composite thermal conductivities of 1.13 and 2.08 W/mK, respectively, which is approximately 528 and 1055% of enhancement with respect to neat epoxy. The package-level thermal performance of the LED employing the Al2O3-filled TIMs was carried out using thermal transient analysis. The experimental junction-to-ambient thermal resistances ( R thJ-A) achieved were 6.65, 7.24, and 8.63 K/W for Al2O3_44µm, Al2O3_10µm and neat epoxy, respectively. The results revealed that the Al2O3_44µm fillers-filled composite performed better in both material-level and package-level thermal characteristics.

  11. Fabrication and Characteristics of Sintered Cutting Stainless Steel Fiber Felt with Internal Channels and an Al2O3 Coating

    Directory of Open Access Journals (Sweden)

    Shufeng Huang

    2018-03-01

    Full Text Available A novel sintered cutting stainless steel fiber felt with internal channels (SCSSFFC composed of a stainless-steel fiber skeleton, three-dimensional interconnected porous structure and multiple circular microchannels is developed. SCSSFFC has a jagged and rough surface morphology and possesses a high specific surface area, which is approximately 2.4 times larger than that of the sintered bundle-drawing stainless steel fiber felt with internal channels (SBDSSFFC and is expected to enhance adhesive strength. The sol-gel and wet impregnation methods are adopted to prepare SCSSFFC with an Al2O3 coating (SCSSFFC/Al2O3. The adhesive strength of SCSSFFC/Al2O3 is investigated using ultrasonic vibration and thermal shock tests. The experimental results indicate that the weight loss rate of the Al2O3 coating has a 4.2% and 8.42% reduction compared with those of SBDSSFFCs based on ultrasonic vibration and thermal shock tests. In addition, the permeability of SCSSFFC/Al2O3 is investigated based on forced liquid flow tests. The experimental results show that the permeability and inertial coefficients of SCSSFFC/Al2O3 are mainly affected by the coating rate, porosity and open ratio; however, the internal microchannel diameter has little influence. It is also found that SCSSFFC/Al2O3 yields superior permeability, as well as inertial coefficients compared with those of other porous materials reported in the literature.

  12. Controlled High Filler Loading of Functionalized Al2O3-Filled Epoxy Composites for LED Thermal Management

    Science.gov (United States)

    Permal, Anithambigai; Devarajan, Mutharasu; Hung, Huong Ling; Zahner, Thomas; Lacey, David; Ibrahim, Kamarulazizi

    2018-01-01

    Thermal management in light-emitting diode (LED) has been extensively researched recently. This study is intended to develop an effective thermally conductive epoxy composite as thermal interface material (TIM) for headlamp LEDs. Silane-functionalized aluminum oxide (Al2O3) powder of different average particle sizes (44 and 10 µm) was studied for its feasibility as filler at its maximum loading. A detailed comparison of three different methods of particle dispersions, hand-mix, speed-mix and calendaring process (3-roll mill), has been reported. The dispersion of Al2O3 particles, the thermal conductivity and thermal degradation characteristics of the composites were investigated and explained in detail. At 75 wt.% filler loading, 10 and 44 µm Al2O3 achieved composite thermal conductivities of 1.13 and 2.08 W/mK, respectively, which is approximately 528 and 1055% of enhancement with respect to neat epoxy. The package-level thermal performance of the LED employing the Al2O3-filled TIMs was carried out using thermal transient analysis. The experimental junction-to-ambient thermal resistances (R thJ-A) achieved were 6.65, 7.24, and 8.63 K/W for Al2O3_44µm, Al2O3_10µm and neat epoxy, respectively. The results revealed that the Al2O3_44µm fillers-filled composite performed better in both material-level and package-level thermal characteristics.

  13. Prediction of fracture strength in Al2O3/SiCp ceramic matrix nanocomposites

    Directory of Open Access Journals (Sweden)

    Z. Zhang and D.L. Chen

    2007-01-01

    Full Text Available Based primarily on a recent publication [S.M. Choi, H. Awaji, Sci. Tech. Adv. Mater. 6 (2005 2–10.], where the dislocations around the nano-sized particles in the intra-granular type of ceramic matrix nanocomposites (CMNCs were modeled, dislocation activities in Al2O3/SiCp CMNCs were discussed in relation to the processing conditions. The dislocations around the nano-sized particles, caused by the thermal mismatch between the ceramic matrix and nano-sized particles, were assumed to hold out the effect of Orowan-like strengthening, although the conventional Owowan loops induced by the movement of dislocations were unlikely in the ceramic matrix at room temperature. A model involving the yield strength of metal matrix nanocomposites (MMNCs, where the Owowan strengthening effect was taken into consideration, was thus modified and extended to predict the fracture strength of the intra-granular type of CMNCs without and with annealing. On the basis of the characteristics of dislocations in the CMNCs, the load-bearing effect and Orowan-like strengthening were considered before annealing, while the load-bearing effect and enhanced dislocation density strengthening were taken into account after annealing. The model prediction was found to be in agreement with the experimental data of Al2O3/SiCp nanocomposites reported in the literature.

  14. Micromachining of AlN and Al2O3 Using Fiber Laser

    Directory of Open Access Journals (Sweden)

    Florian Preusch

    2014-11-01

    Full Text Available We report on high precision high speed micromachining of Al2O3 and AlN using pulsed near infrared fiber laser. Ablation thresholds are determined to be 30 J/cm2 for alumina and 18 J/cm2 for aluminum nitride. The factors influencing the efficiency and quality of 3D micromachining, namely the surface roughness, the material removal rate and the ablation depth accuracy are determined as a function of laser repetition rate and pulse overlap. Using a fluence of 64 J/cm², we achieve a material removal rate of up to 94 mm³/h in Al2O3 and 135 mm³/h in AlN for high pulse overlaps (89% and 84%. A minimum roughness of 1.5 μm for alumina and 1.65 μm for aluminum nitride can be accomplished for medium pulse overlaps (42% to 56%. In addition, ablation depth deviation of the micromachining process of smaller than 8% for alumina and 2% for aluminum nitride are achieved. Based on these results, by structuring exemplarily 3D structures we demonstrate the potential of high quality and efficient 3D micromachining using pulsed fiber laser.

  15. Density Measurements of Low Silica CaO-SiO2-Al2O3 Slags

    Science.gov (United States)

    Muhmood, Luckman; Seetharaman, Seshadri

    2010-08-01

    Density measurements of a low-silica CaO-SiO2-Al2O3 system were carried out using the Archimedes principle. A Pt 30 pct Rh bob and wire arrangement was used for this purpose. The results obtained were in good agreement with those obtained from the model developed in the current group as well as with other results reported earlier. The density for the CaO-SiO2 and the CaO-Al2O3 binary slag systems also was estimated from the ternary values. The extrapolation of density values for high-silica systems also showed good agreement with previous works. An estimation for the density value of CaO was made from the current experimental data. The density decrease at high temperatures was interpreted based on the silicate structure. As the mole percent of SiO2 was below the 33 pct required for the orthosilicate composition, discrete {text{SiO}}4^{4 - } tetrahedral units in the silicate melt would exist along with O2- ions. The change in melt expansivity may be attributed to the ionic expansions in the order of {text{Al}}^{ 3+ } - {text{O}}^{ 2- } < {text{Ca}}^{ 2+ } - {text{O}}^{ 2- } < {text{Ca}}^{ 2+ } - {text{O}}^{ - } Structural changes in the ternary slag also could be correlated to a drastic change in the value of enthalpy of mixing.

  16. Microwave-assisted Ni-La/γ-Al2O3 catalyst for benzene hydrogenation

    Science.gov (United States)

    Liu, Xianjun; Liu, Shuzhi; Xu, Peiqiang

    2017-11-01

    A series of Ni-La/γ-Al2O3 catalysts were prepared by adopting the methods of isometric impregnation and microwave impregnation. The catalysts were characterized with XRD, BET, and SEM, respectively. Inspecting the effects of adding La and the methods of impregnation on the hydrogenation activity of catalysts. The results show that adding a moderate amount of La promotes the dispersing of Ni on the carrier, the methods of microwave impregnation weaks the interaction between Ni and the carrier further, inhibits the formation of NiAl2O4, and the activity of catalyst prepared by the methods of microwave impregnation was significantly higher than that prepared by the methods of isometric impregnation. The hydrogenation activity of the Ni-La/γ-Al2O3 (WB) dipped with n(Ni): n(La) = 4: 1, microwave irradiation time 30 min with power 600W as well as calcined at 400°C exhibited the best performance. The conversion rate is 91.21% with reaction conditions: T = 160°C, p = 0.8 MPa, air speed 5 h-1, n(H2): n(benzene) = 2: 1.

  17. Superficial modifications in TiO2 and Al2O3 ceramics

    Directory of Open Access Journals (Sweden)

    Santos Flávio de Paula

    2003-01-01

    Full Text Available The properties of hydrophilicity or hydrophobicity of materials are defined mainly, though not exclusively, by their composition, morphology and surface energy. In this work, titanium dioxide (TiO2 and aluminum oxide-alumina (Al2O3 ceramics prepared by uniaxial pressing were studied in terms of surface energy. The surfaces of these ceramics were treated with nitrogen plasma, using a stainless steel reactor excited by a 13,6 MHz radio frequency operating at 50 W input power and 13 Pa nitrogen pressure. The surface morphology was investigated by scanning electron microscopy (SEM analysis. Surface energy and contact angle measurements were taken using a RAMÉ-HART goniometer. These measurements were taken as function of time, over a 21-day period. The contact angle and surface energy values were found to change by almost 34% in comparison to their initial values immediately following plasma treatment. Nonetheless, the hydrophilic character of the Al2O3 and TiO2 remained constant throughout the test period.

  18. Sulfuric acid baking and leaching of spent Co-Mo/Al2O3 catalyst.

    Science.gov (United States)

    Kim, Hong-In; Park, Kyung-Ho; Mishra, Devabrata

    2009-07-30

    Dissolution of metals from a pre-oxidized refinery plant spent Co-Mo/Al(2)O(3) catalyst have been tried through low temperature (200-450 degrees C) sulfuric acid baking followed by mild leaching process. Direct sulfuric acid leaching of the same sample, resulted poor Al and Mo recoveries, whereas leaching after sulfuric acid baking significantly improved the recoveries of above two metals. The pre-oxidized spent catalyst, obtained from a Korean refinery plant found to contain 40% Al, 9.92% Mo, 2.28% Co, 2.5% C and trace amount of other elements such as Fe, Ni, S and P. XRD results indicated the host matrix to be poorly crystalline gamma- Al(2)O(3). The effect of various baking parameters such as catalyst-to-acid ratio, baking temperature and baking time on percentage dissolutions of metals has been studied. It was observed that, metals dissolution increases with increase in the baking temperature up to 300 degrees C, then decreases with further increase in the baking temperature. Under optimum baking condition more than 90% Co and Mo, and 93% Al could be dissolved from the spent catalyst with the following leaching condition: H(2)SO(4)=2% (v/v), temperature=95 degrees C, time=60 min and Pulp density=5%.

  19. Tribological properties of Cu based composite materials strengthened with Al2O3 particles

    Directory of Open Access Journals (Sweden)

    J. W. Kaczmar

    2012-12-01

    Full Text Available In the present work copper was strenghtened with 20 and 30 vol. % of alumina particles characterized by diameter of 3-6μm. The copperbased composite materials were manufactured by the squeeze casting method. Preheated preforms made from Al2O3 particles were placedin the desired place in the heated cast die and the squeeze casting process with liquid copper was performed applying the infiltrationpressure of 90MPa and pressure was kept for 10-15s until solidification was complete. The microstructure and physical properties: Brinell hardness (HBW and density were characterized. Metallografic examinations showed that alumina particles were uniformly distributed in the copper matrix. Hardness of 208 HBW for composite materials containing 30 vol.% of particles was achieved. Wear investigations were performed applying the tribological pin-on-disc tester. Friction forces between copper based composite materials containing 20 and 30 vol. % of Al2O3 particles and cast iron were registered and wear was determined on the base of the specimen mass loss after 1.0, 3.5 and 8.5 km friction distance.

  20. TiB2/Al2O3 ceramic particle reinforced aluminum fabricated by spray deposition

    International Nuclear Information System (INIS)

    Chen Xing; Yang Chengxiao; Guan Leding; Yan Biao

    2008-01-01

    Aluminum matrix ceramic particle reinforced composites (AMCs) is a kind of composite with great importance. Aluminum matrix composite reinforced with TiB 2 /Al 2 O 3 ceramic particles was successfully in situ synthesized in Al-TiO 2 -B 2 O 3 system in this paper, using spray deposition with hot-press treatment technique. Five groups of composites with different reinforcement volume contents were prepared and the comparisons of porosity, ultimate tensile strength (UTS), elongation and Brinell hardness (BH) between the composites with and without hot-press treating were carried out. The composite with 21.0% reinforcement volume content was analyzed by X-ray diffraction (XRD), Environmental Scanning Electron Microscope (ESEM), Transmission Electron Microscope (TEM) and Energy Disperse Spectroscopy (EDS). The results revealed the formation and uniform distribution of fine reinforcements in the matrix after hot-press treating, while a new intermetallic phase Al 3 Ti was found besides TiB 2 /Al 2 O 3 ceramic phase

  1. Corrosion Resistance of Ni/Al2O3 Nanocomposite Coatings

    Directory of Open Access Journals (Sweden)

    Beata KUCHARSKA

    2016-05-01

    Full Text Available Nickel matrix composite coatings with ceramic disperse phase have been widely investigated due to their enhanced properties, such as higher hardness and wear resistance in comparison to the pure nickel. The main aim of this research was to characterize the structure and corrosion properties of electrochemically produced Ni/Al2O3 nanocomposite coatings. The coatings were produced in a Watts bath modified by nickel grain growth inhibitor, cationic surfactant and the addition of alumina particles (low concentration 5 g/L. The process has been carried out with mechanical and ultrasonic agitation. The Ni/Al2O3 nanocomposite coatings were characterized by SEM, XRD and TEM techniques. In order to evaluate corrosion resistance of produced coatings, the corrosion studies have been carried out by the potentiodynamic method in a 0.5 M NaCl solution. The corrosion current, corrosion potential and corrosion rate were determined. Investigations of the morphology, topography and corrosion damages of the produced surface layers were performed by scanning microscope techniques. DOI: http://dx.doi.org/10.5755/j01.ms.22.1.7407

  2. Tribological properties of Al 7075 alloy based composites strengthened with Al2O3 fibres

    Directory of Open Access Journals (Sweden)

    K. Naplocha

    2011-04-01

    Full Text Available Wear resistance of 7075 aluminium alloy based composite materials reinforced with Al2O3 Saffil fibres was investigated. The measurementsof wear were performed applying the pin-on-disc method at dry friction conditions with the gray iron counterpart. The effects ofpressure of composite samples on the counterpart made of gray iron and the orientation of fibers in relation to the friction surface on wear rate were determined. The materials were produced by squeeze casting method where 80-90% porous ceramic preform were infiltrated.After T6 heat treatment hardness increased about 50-60% both for unreinforced alloy and composites containing strengthening Saffilfibres. Wear resistance of composite materials in relation to the unreinforced 7075 alloy was slightly worse at lower pressure of 0.8 MPa. Under higher pressure of 1.2 MPa wear resistance of unreinforced 7075 alloy was even better whereas no effect of orientation of fibers on wear in composite materials was observed. Additionally, significant wear of counterface in the presence of debris with fragmented Al2O3 fibres as abrasives was observed. Wear resistance improvement of composite materials was obtained when with alumina Saffil fibres Carbon C fibres in the preforms were applied.

  3. Deactivating Carbon Formation on a Ni/Al2O3 Catalyst under Methanation Conditions

    DEFF Research Database (Denmark)

    Olesen, Sine Ellemann; Andersson, Klas J.; Damsgaard, Christian Danvad

    2017-01-01

    The carbon formation causing deactivation during CO methanation was studied for a Ni/Al2O3 catalyst. Sulfur-free methanation at low temperature (573 K) for various lengths of time was followed by temperature-programmed hydrogenation (TPH) providing information on carbon types involved in the deac......The carbon formation causing deactivation during CO methanation was studied for a Ni/Al2O3 catalyst. Sulfur-free methanation at low temperature (573 K) for various lengths of time was followed by temperature-programmed hydrogenation (TPH) providing information on carbon types involved...... in the deactivation of the catalyst.Three main carbon hydrogenation peaks were evident from TPHs following methanation: ∼460, ∼650, and ∼775 K. It is suggested that the ∼460 K TPH peak was composed of two peaks: a surface carbide peak at 445–460 K, and a peak due to carbon dissolved into the nickel at 485 K based...... on CO and CH4 adsorption measurements and XRD analysis. The 650 and 775 K temperature peaks are assigned to polymerized carbon structures and the ∼775K peak was found to be the primary cause of deactivation as judged by a linear correlation between its amount and the degree of catalyst deactivation...

  4. Temperature dependence of the Al2O3:C response in medical luminescence dosimetry

    International Nuclear Information System (INIS)

    Edmund, Jens M.; Andersen, Claus E.

    2007-01-01

    Over the last years, attention has been given to applications of Al 2 O 3 :C in space and medical dosimetry. One such application is in vivo dose verification in radiotherapy of cancer patients and here we investigate the temperature effects on the radioluminescence (RL) and optically stimulated luminescence (OSL) signals in the room-to-body temperature region. We found that the OSL response changes with both irradiation and stimulation temperatures as well as the OSL integration time. We conclude that temperature effects on the OSL response can be removed by integration if the irradiation temperature is not varied. The RL response only depends on the irradiation temperature. We recommend that calibration should be carried out at the same irradiation temperature at which the measurement is performed (i.e. at body temperature for in vivo measurements). The overall change in the integrated OSL and RL signals with irradiation and stimulation temperature covers an interval from -0.2% to 0.6% per deg. C. This indicates the correction factor one must take into account when performing luminescence dosimetry at different temperatures. The same effects were observed regardless of crystal type, test doses and stimulation and detection wavelengths. The reported temperature dependence seems to be a general property of Al 2 O 3 :C

  5. Dynamic compaction of Al2O3-ZrO2 compositions

    International Nuclear Information System (INIS)

    Tunaboylu, B.; McKittrick, J.; Nutt, S.R.

    1994-01-01

    Shock compaction of Al 2 O 3 -ZrO 2 binary and ternary powder compositions resulted in dense, one-piece samples without visible cracks for pressures ≤12.6 GPa. Dynamic pressures were achieved by using a 6.5-m-long two-state gas gun. It is believed that plastic deformation by dislocation slip of α-Al 2 O 3 partially accommodates the tensile stresses created during the release of shock pressures. A fine and narrow particle size distribution is necessary to achieve high bulk densities, but the bulk structural integrity was not strongly related to the distribution. A high-pressure phase of ZrO 2 , which was formed from the monoclinic polymorph, was found at and above shock pressure of 6.3 GPa. No evidence of the orthorhombic cotunnite structure was observed. Compaction of glassy and submicrocrystalline rapidly solidified starting materials showed good structural integrity, although the bulk density was relatively low. It is not clear what the densification/bonding mechanism is in these materials, although it appears not to be plastic deformation. Microstructural analysis showed that fine and uniform microstructures are retained after compaction at appropriate dynamic pressures for all compositions, with some interparticle cohesion present

  6. Formation mechanism and control of MgO·Al2O3 inclusions in non-oriented silicon steel

    Science.gov (United States)

    Sun, Yan-hui; Zeng, Ya-nan; Xu, Rui; Cai, Kai-ke

    2014-11-01

    On the basis of the practical production of non-oriented silicon steel, the formation of MgO·Al2O3 inclusions was analyzed in the process of "basic oxygen furnace (BOF) → RH → compact strip production (CSP)". The thermodynamic and kinetic conditions of the formation of MgO·Al2O3 inclusions were discussed, and the behavior of slag entrapment in molten steel during RH refining was simulated by computational fluid dynamics (CFD) software. The results showed that the MgO/Al2O3 mass ratio was in the range from 0.005 to 0.017 and that MgO·Al2O3 inclusions were not observed before the RH refining process. In contrast, the MgO/Al2O3 mass ratio was in the range from 0.30 to 0.50, and the percentage of MgO·Al2O3 spinel inclusions reached 58.4% of the total inclusions after the RH refining process. The compositions of the slag were similar to those of the inclusions; furthermore, the critical velocity of slag entrapment was calculated to be 0.45 m·s-1 at an argon flow rate of 698 L·min-1, as simulated using CFD software. When the test steel was in equilibrium with the slag, [Mg] was 0.00024wt%-0.00028wt% and [Al]s was 0.31wt%-0.37wt%; these concentrations were theoretically calculated to fall within the MgO·Al2O3 formation zone, thereby leading to the formation of MgO·Al2O3 inclusions in the steel. Thus, the formation of MgO·Al2O3 inclusions would be inhibited by reducing the quantity of slag entrapment, controlling the roughing slag during casting, and controlling the composition of the slag and the MgO content in the ladle refractory.

  7. XAS study of V2O5/Al2O3 catalysts doped with rare earth oxides

    International Nuclear Information System (INIS)

    Centeno, M.A.; Malet, P.; Capitan, M.J.; Benitez, J.J.; Carrizosa, I.; Odriozola, J.A.

    1995-01-01

    This paper reports on XAS studies of well dispersed V 2 O 5 /Al 2 O 3 and V 2 O 5 /Sm 2 O 3 /Al 2 O 3 samples. XAS spectra at V-K and Sm-L III edges show that the rare earth oxide favours the formation of regular tetrahedral units, [VO 4 ], over the surface of the support. Positions of the preedge peak at the V-K edge, and intensities of the white line at the Sm-L III edge also suggest modifications in the electronic density around V and Sm atoms when they are simultaneously supported over Al 2 O 3 . ((orig.))

  8. Liquidus Temperature of SrO-Al2O3-SiO2 Glass-Forming Compositions

    DEFF Research Database (Denmark)

    Abel, Brett M.; Morgan, James M.; Mauro, John C.

    2013-01-01

    Despite the important role of strontium aluminosilicate glasses in various technologies, there is no available phase diagram for this ternary system in the ACerS-NIST Phase Equilibria Diagrams Database. Establishing the liquidus surface (liquidus temperature Tliq and primary devitrification phase...... with the phase diagrams for CaO-Al2O3-SiO2 and MgO-Al2O3-SiO2 systems, we have found that for the highest [RO]/[Al2O3] ratios, Tliq exhibits a minimum value for R = Ca. Based on the phase diagram established here, the composition of glass materials, for example, for liquid crystal display substrates, belonging...

  9. Experiment and prediction on thermal conductivity of Al2O3/ZnO ...

    Indian Academy of Sciences (India)

    Administrator

    2012) and Liao et al (2010) investigated the heat transfer properties of interface structures based on multiscale model method. The interface thermal resistance and defects have significant effect on the thermal performance of interfacial structure. Choi et al (2006) tested TC of aluminum nitride and SiC thin films by using 3ω ...

  10. Study on influence of Surface roughness of Ni-Al2O3 nano composite coating and evaluation of wear characteristics

    Science.gov (United States)

    Raghavendra, C. R.; Basavarajappa, S.; Sogalad, Irappa

    2018-02-01

    Electrodeposition is one of the most technologically feasible and economically superior techniques for producing metallic coating. The advancement in the application of nano particles has grabbed the attention in all fields of engineering. In this present study an attempt has been made on the Ni-Al2O3nano particle composite coating on aluminium substrate by electrodeposition process. The aluminium surface requires a specific pre-treatment for better adherence of coating. In light of this a thin zinc layer is coated on the aluminium substrate by electroless process. In addition to this surface roughness is an important parameter for any coating method and material. In this work Ni-Al2O3 composite coating were successfully coated by varying the process parameters such as bath temperature, current density and particle loading. The experimentation was performed using central composite design based 20 trials of experiments. The effect of process parameters and surface roughness before and after coating is analyzed on wear rate and coating thickness. The results shown a better wear resistance of Ni-Al2O3 composite electrodeposited coating compared to Ni coating. The particle loading and interaction effect of current density with temperature has greater significant effect on wear rate. The surface roughness is significantly affected the wear behaviour and thickness of coating.

  11. Influence of SiO2/Al2O3 Molar Ratio on Phase Composition and Surfaces Quality of Aluminum Silicate Sanitary Glazes in the SiO2-Al2O3-CaO-Na2O System

    Directory of Open Access Journals (Sweden)

    Leśniak M.

    2016-12-01

    Full Text Available This paper presents the results of research on aluminum silicate sanitary glazes in the SiO2-Al2O3-CaO-Na2O system with different SiO2/Al2O3 molar ratio. XRD, SEM-EDS and FITR measurement indicated that SiO2/Al2O3 molar ratio has a significant impact on the phase composition of the obtained glazes. Glass-ceramic glazes were obtained that consisted of both the glass phase and pseudowollastonite (Ca3[SiO3]3 or anorthite (Ca[Al2Si2O8] crystals. Subsequently, the influence of phase composition on surface quality (roughness was examined for the obtained samples. On the basis of the conducted examination of glaze surface roughness was observed that glazes of extreme SiO2/Al2O3 molar ratio are characterized with greatest surface roughness when compared to other glazes.

  12. In situ infrared spectroscopic analysis of the adsorption of aromatic carboxylic acids to TiO 2, ZrO 2, Al 2O 3, and Ta 2O 5 from aqueous solutions

    Science.gov (United States)

    Dobson, Kevin D.; McQuillan, A. James

    2000-02-01

    In situ infrared spectroscopy has been used to investigate the adsorption of a range of simple aromatic carboxylic acids from aqueous solution to metal oxides. Thin films of TiO 2, ZrO 2, Al 2O 3 and Ta 2O 5 were prepared by evaporation of aqueous sols on single reflection ZnSe prisms. Benzoic acid adsorbed very strongly to ZrO 2, in a bridging bidentate fashion, but showed only weak adsorption to TiO 2 and Ta 2O 5. Substituted aromatic carboxylic acids; salicylic, phthalic and thiosalicylic, were found to adsorb to each metal oxide. Salicylic and phthalic acids adsorbed to the metal oxides via bidentate interactions, involving coordination through both carboxylate and substituent groups. Thiosalicylic acid adsorbed to the metal oxides as a bridging bidentate carboxylate with no coordination through the thiol substituent group.

  13. Lifetime assessment of atomic-layer-deposited Al2O3-Parylene C bilayer coating for neural interfaces using accelerated age testing and electrochemical characterization.

    Science.gov (United States)

    Minnikanti, Saugandhika; Diao, Guoqing; Pancrazio, Joseph J; Xie, Xianzong; Rieth, Loren; Solzbacher, Florian; Peixoto, Nathalia

    2014-02-01

    The lifetime and stability of insulation are critical features for the reliable operation of an implantable neural interface device. A critical factor for an implanted insulation's performance is its barrier properties that limit access of biological fluids to the underlying device or metal electrode. Parylene C is a material that has been used in FDA-approved implantable devices. Considered a biocompatible polymer with barrier properties, it has been used as a substrate, insulation or an encapsulation for neural implant technology. Recently, it has been suggested that a bilayer coating of Parylene C on top of atomic-layer-deposited Al2O3 would provide enhanced barrier properties. Here we report a comprehensive study to examine the mean time to failure of Parylene C and Al2O3-Parylene C coated devices using accelerated lifetime testing. Samples were tested at 60°C for up to 3 months while performing electrochemical measurements to characterize the integrity of the insulation. The mean time to failure for Al2O3-Parylene C was 4.6 times longer than Parylene C coated samples. In addition, based on modeling of the data using electrical circuit equivalents, we show here that there are two main modes of failure. Our results suggest that failure of the insulating layer is due to pore formation or blistering as well as thinning of the coating over time. The enhanced barrier properties of the bilayer Al2O3-Parylene C over Parylene C makes it a promising candidate as an encapsulating neural interface. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  14. Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

    Science.gov (United States)

    Ťapajna, M.; Stoklas, R.; Gregušová, D.; Gucmann, F.; Hušeková, K.; Haščík, Š.; Fröhlich, K.; Tóth, L.; Pécz, B.; Brunner, F.; Kuzmík, J.

    2017-12-01

    III-N surface polarization compensating charge referred here to as 'surface donors' (SD) was analyzed in Al2O3/AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at 600 °C. We systematically investigated impact of HCl pre-treatment prior to oxide deposition and post-deposition annealing (PDA) at 700 °C. SD density was reduced down to 1.9 × 1013 cm-2 by skipping HCl pre-treatment step as compared to 3.3 × 1013 cm-2 for structures with HCl pre-treatment followed by PDA. The nature and origin of SD was then analyzed based on the correlation between electrical, micro-structural, and chemical properties of the Al2O3/GaN interfaces with different SD density (NSD). From the comparison between distributions of interface traps of MOS heterojunction with different NSD, it is demonstrated that SD cannot be attributed to interface trapped charge. Instead, variation in the integrity of the GaOx interlayer confirmed by X-ray photoelectron spectroscopy is well correlated with NSD, indicating SD may be formed by border traps at the Al2O3/GaOx interface.

  15. Statistical analysis of absorptive laser damage in dielectric thin films

    International Nuclear Information System (INIS)

    Budgor, A.B.; Luria-Budgor, K.F.

    1978-01-01

    The Weibull distribution arises as an example of the theory of extreme events. It is commonly used to fit statistical data arising in the failure analysis of electrical components and in DC breakdown of materials. This distribution is employed to analyze time-to-damage and intensity-to-damage statistics obtained when irradiating thin film coated samples of SiO 2 , ZrO 2 , and Al 2 O 3 with tightly focused laser beams. The data used is furnished by Milam. The fit to the data is excellent; and least squared correlation coefficients greater than 0.9 are often obtained

  16. Conductivity and Thermal Studies on Plasticized Nano-Composite Solid Polymer Electrolyte, Peo: Ec: LiTf: Al2O3

    Science.gov (United States)

    Pitawala, H. M. J. C.; Dissanayake, M. A. K. L.; Seneviratne, V. A.

    2006-06-01

    Poly (ethylene oxide)-(PEO)-based composite polymer electrolytes are of great interest for solid-state-electrochemical devices. This paper presents the results of a preliminary study on electrical conductivity and thermal behavior (DSC) of composite polymer electrolytes (CPEs) containing PEO: LiCF3SO3 complexed with plasticizer (EC) and incorporating nano-sized particles of the ceramic filler Al2O3. Ionic conductivity enhancement in these electrolytes has been obtained by optimizing the combined effect of the plasticizer and the ceramic filler. Nano-composite, plasticized polymer electrolyte films (400-600μm) were prepared by common solvent casting method. It was revealed that the presence of the Al2O3 filler in PEO: LiTf polymer electrolyte significantly enhanced the ionic conductivity in the temperature range of interest, giving the maximum conductivity for (PEO)9LiTf+15 wt.% Al2O3 CPE [σRT (max)=2×10-5 S cm-1]. It was also observed that the addition of plasticizer (EC) to this electrolyte up to a concentration of 50 wt. % EC, showed a further conductivity enhancement [σRT (max) = 1.5×10-4 S cm-1]. It is suggested that the conductivity is enhanced mainly by two mechanisms. The plasticizer (EC) would directly contribute by reducing the crystallinity and increasing the amorphous phase content of the polymer electrolytes. The ceramic filler (Al2O3) would contribute to conductivity enhancement by creating additional sites to migrating ionic species through transient bonding with O/OH groups in the filler surface. The decrease of Tg values of plasticized CPE systems seen in the DSC thermograms points towards the improved segmental flexibility of polymer chains, increasing the mobility of conducting ions.

  17. Atomic layer deposition of Al-doped ZnO thin films

    International Nuclear Information System (INIS)

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro

    2013-01-01

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al 2 O 3 on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al 2 O 3 phase and no further carrier doping of ZnO is observed.

  18. Effects of temperature and ionization density in medical luminescence dosimetry using Al2O3:C

    International Nuclear Information System (INIS)

    Morgenthaler Edmund, J.

    2007-11-01

    A new system containing small crystals of aluminum oxide doped with carbon (Al 2 O 3 :C) attached to optical fiber cables has recently been introduced. During irradiation, the system monitors the radioluminescence (RL)from the crystals and after irradiation, an optically stimulated luminescence (OSL) signal can be read out by stimulating the crystal with light. This thesis applies the initial part and the total area of the resulting OSL decay curve for dosimetry measurements and investigates the effects of temperature and proton energy, i.e. ionization density, on the RL and OSL signals from Al 2 O 3 :C. In the temperature study, it was found that the OSL signal depends on both irradiation and stimulation temperature while the RL signal is effected only by the irradiation temperature. The initial OSL signal is increasing with temperature whereas the total OSL area is decreasing. Therefore, if the irradiation temperature is kept constant, one can find an integration time which provides an OSL signal independent of stimulation temperature. Overall, the RL and OSL signals vary between -0.2 to 0.6% per C. Thermal effects were simulated with a band structure model and indicated that the temperature effects are caused by the combined efforts of energetic shallow traps and thermal excitation from intermediate states in deeper traps. In the study of ionization density, we investigated protons with energies between 10 and 60 MeV (4.57 to 1.08 keV/μm in water). Experimentally, we observed that the initial OSL signalprovided a signal independent of linear energy transfer (LET) for allenergies at 0.3 Gy. The total OSL area showed an LET dependent behavior atall doses and energies. We used track structure theory (TST) to give possible explanations for the LET dependence of the OSL signal. From these calculations, we found that the initial OSL signal is, in general, not LET independent which makes Al2O3:C unsuitable for OSL proton dosimetry. The initial OSL signal can, however

  19. Natural convection of Al2O3-water nanofluid in a wavy enclosure

    Science.gov (United States)

    Leonard, Mitchell; Mozumder, Aloke K.; Mahmud, Shohel; Das, Prodip K.

    2017-06-01

    Natural convection heat transfer and fluid flow inside enclosures filled with fluids, such as air, water or oil, have been extensively analysed for thermal enhancement and optimisation due to their applications in many engineering problems, including solar collectors, electronic cooling, lubrication technologies, food processing and nuclear reactors. In comparison, little effort has been given to the problem of natural convection inside enclosures filled with nanofluids, while the addition of nanoparticles into a fluid base to alter thermal properties can be a feasible solution for many heat transfer problems. In this study, the problem of natural convection heat transfer and fluid flow inside a wavy enclosure filled with Al2O3-water nanofluid is investigated numerically using ANSYS-FLUENT. The effects of surface waviness and aspect ratio of the wavy enclosure on the heat transfer and fluid flow are analysed for various concentrations of Al2O3 nanoparticles in water. Flow fields and temperature fields are investigated and heat transfer rate is examined for different values of Rayleigh number. Results show that heat transfer within the enclosure can be enhanced by increasing surface waviness, aspect ratio or nanoparticles volume fraction. Changes in surface waviness have little effect on the heat transfer rate at low Rayleigh numbers, but when Ra ≥ 105 heat transfer increases with the increase of surface waviness from zero to higher values. Increasing the aspect ratio causes an increase in heat transfer rate, as the Rayleigh number increases the effect of changing aspect ratio is more apparent with the greatest heat transfer enhancement seen at higher Rayleigh numbers. Nanoparticles volume fraction has a little effect on the average Nusselt number at lower Rayleigh numbers when Ra ≥ 105 average Nusselt number increases with the increase of volume fraction. These findings provide insight into the heat transfer effects of using Al2O3-water nanofluid as a heat

  20. Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

    International Nuclear Information System (INIS)

    Zheng Zhi-Wei; Huo Zong-Liang; Zhu Chen-Xin; Xu Zhong-Guang; Liu Jing; Liu Ming

    2011-01-01

    In this paper, we investigate an Al 2 O 3 /HfSiO stack as the blocking layer of a metal—oxide—nitride—oxide—silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al 2 O 3 /HfO 2 stack as the blocking layer, the sample with the Al 2 O 3 /HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al 2 O 3 /HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications. (interdisciplinary physics and related areas of science and technology)

  1. Methanol synthesis from CO2 hydrogenation over Cu based catalyst supported on zirconia modified γ-Al2O3

    International Nuclear Information System (INIS)

    Zhang Yiping; Fei Jinhua; Yu Yingmin; Zheng Xiaoming

    2006-01-01

    The effect of zirconia modification on γ-Al 2 O 3 support to the Cu based catalyst was studied. It is found that the catalytic activity and methanol selectivity of the catalyst after Zr addition are both improved. The influences of reaction temperature, space velocity and the molar ratio of H 2 :CO 2 on Cu/γ-Al 2 O 3 and 12Cu10Zr/γ-Al 2 O 3 catalyst were also studied. The results indicate that low temperature, high space velocity and proper molar ratio of H 2 /CO 2 are advantageous to methanol synthesis. The XRD and TPR characterization show that the addition of Zr enhances the dispersion of CuO species, which is responsible for the enhanced catalytic performance of Cu based catalyst supported on zirconia modified γ-Al 2 O 3 catalyst

  2. Effects of plasma-enhanced chemical vapor deposition (PECVD) on the carrier lifetime of Al2O3 passivation stack

    Science.gov (United States)

    Cho, Kuk-Hyun; Cho, Young Joon; Chang, Hyo Sik; Kim, Kyung-Joong; Song, Hee Eun

    2015-09-01

    We investigated the effect on the minority carrier lifetime of atomic layer deposition (ALD) Al2O3 passivation by a plasma-enhanced chemical vapor deposition (PECVD) SiON layer in Si/Al2O3/SiON-passivated structure. The lifetime variation of the Al2O3/SiON stack layer was found to depend on both the plasma power and the deposition temperature during the PECVD SiON process and to show better thermal stability than the Al2O3/SiNx:H stack under the same deposition conditions. The lifetime after a high-temperature firing process was improved dramatically at the PECVD deposition temperature of 200 °C. Our results provide a significant clue to reason for the improvement of the passivation performance for passivated emitter and rear contact (PERC) silicon solar cells.

  3. Raman spectra of MgSiO3 . 10% Al2O3-perovskite at various pressures and temperatures

    International Nuclear Information System (INIS)

    Liu Lingun; Irifune, T.

    1995-01-01

    Variations of Raman spectra of MgSiO 3 . 10% Al 2 O 3 -perovskite were investigated up to about 270 kbar at room temperature and in the range 108-425 K at atmospheric pressure. Like MgSiO 3 -perovskite, the Raman frequencies of MgSiO 3 . 10% Al 2 O 3 -perovskite increase nonlinearly with increasing pressure and decrease linearly with increasing temperature within the experimental uncertainties and the range investigated. A comparison of these data with those of MgSiO 3 -perovskite suggests that MgSiO 3 . 10% Al 2 O 3 -perovskite is slightly more compressible than MgSiO 3 -perovskite, and that the volume thermal expansion for MgSiO 3 . 10% Al 2 O 3 -perovskite is also slightly greater than that for MgSiO 3 -perovskite. (orig.)

  4. Effects of γ-radiation on dielectric properties of LDPE-Al2O3 nanocomposites

    Science.gov (United States)

    Ciuprina, Florin; Zaharescu, Traian; Pleşa, Ilona

    2013-03-01

    Until now several methods for processing and characterization have been tested, and some theories and models have been proposed for these materials having a huge nanofiller-polymer interface area which seems to be the main responsible for their unique properties. The accelerated testing by irradiation of LDPE has been extensively studied in order to assess optimized formulation. The present paper characterizes LDPE modified with Al2O3 nanoparticles. The dispersed nanofiller was added in various concentrations (2, 5 and 10 wt%). The accelerated aging under γ-irradiation was accomplished for evaluation of material behavior to hard stressing environment. Dielectric properties (real part of the permittivity and tan delta) and oxidation resistance were discussed. An improvement of the dielectric losses is noticed for the tested nanocomposites at a radiation dose up to 20 kGy. The radiochemical stability studied by chemiluminescence provides satisfactory stability in the correlation with slight modification of basis polymer due to the inert feature of filler.

  5. Temperature coefficients for in vivo RL and OSL dosimetry using Al2O3:C

    DEFF Research Database (Denmark)

    Andersen, Claus Erik; Edmund, Jens Morgenthaler; Damkjær, Sidsel Marie Skov

    2008-01-01

    A radiotherapy dosimetry system based on radiolurninescence (RL) and optically stimulated luminescence (OSL) from small carbon-doped aluminum oxide (Al2O3:C) crystals attached to optical-fiber cables has been developed. To quantify the influence of temperature variations on clinical RL and OSL...... measurement results, we conducted an automated laboratory experiment involving threefold randomization of (1) irradiation temperature (10-45 degrees C), (2) stimulation temperature (10-45 degrees C), and (3) irradiation dose (0-4 Gy; 50 kV X-rays). We derived linear RL and OSL temperature coefficients using...... a simple statistical model fitted to all data (N = 909). The study shows that the temperature coefficients are independent of dose and other variables studied. In agreement with an earlier investigation, we found that the RL signal changes only with irradiation temperature whereas the OSL response changes...

  6. Effect of preparation method on catalytic activity of Ni/ γ-Al2O3 catalysts

    International Nuclear Information System (INIS)

    Miranda Morales, Barbara

    2017-01-01

    The performance of catalysts was shown to be strongly dependent on their methods of preparation. A study to examine the relationship between catalyst preparation procedures and the structure, dispersion, activity, and selectivity of the finished catalyst is reported. 10 wt.%Ni/γ-Al 2 O 3 catalysts were prepared by incipient wetness impregnation and by wet impregnation. The catalysts were used in the conversion of glycerol in gas phase and atmospheric pressure. The selectivity and activity of the catalysts were affected by the preparation method employed. The catalysts were characterized by thermogravimetric analysis (TGA), temperature-programmed reduction (TPR), N 2 -physorption, H 2 -chemisorption, X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier-transform infrared spectroscopy (FTIR) and temperature-programmed oxidation (TPO). The Ni particle size and dispersion of the catalysts affected the selectivity to hydrogenolysis and dehydration routes, and the formation of carbon deposits was also affected. (author) [es

  7. Numerical Simulation of Water/Al2O3 Nanofluid Turbulent Convection

    Directory of Open Access Journals (Sweden)

    Vincenzo Bianco

    2010-01-01

    Full Text Available Turbulent forced convection flow of a water-Al2O3 nanofluid in a circular tube subjected to a constant and uniform temperature at the wall is numerically analyzed. The two-phase mixture model is employed to simulate the nanofluid convection, taking into account appropriate thermophysical properties. Particles are assumed spherical with a diameter equal to 38 nm. It is found that convective heat transfer coefficient for nanofluids is greater than that of the base liquid. Heat transfer enhancement is increasing with the particle volume concentration and Reynolds number. Comparisons with correlations present in the literature are accomplished and a very good agreement is found with Pak and Cho (1998. As for the friction factor, it shows a good agreement with the classical correlation used for normal fluid, such as Blasius formula.

  8. Experimental Study of the Freezing Point of γ-Al2O3/Water Nanofluid

    Directory of Open Access Journals (Sweden)

    Thierry Maré

    2012-01-01

    Full Text Available Nanofluids are colloidal suspensions made of nanometer-sized particles dispersed in a conventional fluid. Their unusual thermal properties explain intensive investigations for several thermal and industrial applications. In this work, an experimental investigation was performed to measure the freezing point and to study the supercooling point made of alumina γ-Al2O3 nanoparticles with 30 nm diameter size and deionized water. Particles' volume fraction used in this work is ranging from 1% to 4%. The T-historic method based on the measurement of the point of inflexion was performed to measure the thermal properties such as the freezing point and the latent heat of solidification of the nanofluids for different concentrations. The results show that the supercooling degree decreases for the high particles volume concentrations and that the agglomeration does not influence the temperature of the freezing point. However, it makes the freezing process longer.

  9. Influence of Sonication on the Stability and Thermal Properties of Al2O3 Nanofluids

    Directory of Open Access Journals (Sweden)

    Monir Noroozi

    2014-01-01

    Full Text Available Nanofluids containing Al2O3 nanoparticles (either 11 or 30 nm in size dispersed in distilled water at low concentrations (0.125–0.5 wt% were prepared using two different ultrasonic devices (a probe and a bath sonicator as the dispersant. The effect of the ultrasonic system on the stability and thermal diffusivity of the nanofluids was investigated. Thermal diffusivity measurements were conducted using a photopyroelectric technique. The dispersion characteristics and morphology of the nanoparticles, as well as the optical absorption properties of the nanofluids, were studied using photon cross correlation spectroscopy with a Nanophox analyzer, transmission electron microscopy, and ultraviolet-visible spectroscopy. At higher particle concentration, there was greater enhancement of the thermal diffusivity of the nanofluids resulting from sonication. Moreover, greater stability and enhancement of thermal diffusivity were obtained by sonicating the nanofluids with the higher power probe sonicator prior to measurement.

  10. Obtaining and characterization catalyst Ki/Al2O3 by physical dispersion process via wet

    International Nuclear Information System (INIS)

    Silva, M.C. da; Dantas, J.; Costa, A.C.F.M.; Costa, N.C.O.; Freitas, N.L. de

    2014-01-01

    The aim of this study is the Obtention and characterization of catalysts being supported alumina impregnated with KI by physical dispersion in wet via attritor mill in periods of 30 and 60 minutes. Before and after impregnation the catalysts were characterized by XRD, X ray fluorescence, particle size distribution, textural analysis (BET). The results show the presence of the stable crystalline phase Al 2 O 3 in all samples after impregnation and the second phase formed from KI and K 2 O. There was a decrease in the agglomerates incorporated with the potassium due to the milling process. It was observed that the highest specific surface area was obtained by the impregnated sample into a 60 min. (author)

  11. Combined TEM and NC-AFM study of Al2O3-supported Pt nanoparticles

    DEFF Research Database (Denmark)

    Jensen, Thomas Nørregaard; Simonsen, Søren Bredmose; Chorkendorff, Ib

    Sintering, the growth of large particles at the expense of smaller ones, is one of the main causes of catalysts deactivation, since the physicochemical properties of a nanoparticle may depend strongly on its size, shape and composition. For application as heterogeneous catalysts, the nanoparticle...... kinks and edges often play an important role for the catalytic activity. In order to preserve these sites, it is important to stabilize the supported nanoparticles with sizes of a few nanometers during operational conditions at often high temperatures and in the relevant gas environments. A prototypical...... nanocatalyst system for studying coarsening consists of Pt nanoparticles supported on an Al2O3 material which is relevant as an oxidation catalyst in diesel and lean-burn engine exhaust after-treatment technologies. In this study we address the effect on sintering of the shape of Pt nanoparticles supported...

  12. Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

    Science.gov (United States)

    Liao, Meiyong; Liu, Jiangwei; Sang, Liwen; Coathup, David; Li, Jiangling; Imura, Masataka; Koide, Yasuo; Ye, Haitao

    2015-02-01

    Impedance spectroscopy (IS) analysis is carried out to investigate the electrical properties of the metal-oxide-semiconductor (MOS) structure fabricated on hydrogen-terminated single crystal diamond. The low-temperature atomic layer deposition Al2O3 is employed as the insulator in the MOS structure. By numerically analysing the impedance of the MOS structure at various biases, the equivalent circuit of the diamond MOS structure is derived, which is composed of two parallel capacitive and resistance pairs, in series connection with both resistance and inductance. The two capacitive components are resulted from the insulator, the hydrogenated-diamond surface, and their interface. The physical parameters such as the insulator capacitance are obtained, circumventing the series resistance and inductance effect. By comparing the IS and capacitance-voltage measurements, the frequency dispersion of the capacitance-voltage characteristic is discussed.

  13. Adsorption heats of olefins on supported MoO3/Al2O3 catalists

    International Nuclear Information System (INIS)

    Grinev, V.E.; Madden, M.; Khalit, V.A.; Aptekar', E.L.; Aldag, A.; Krylov, O.V.

    1983-01-01

    Adsorption heats of C 2 H 4 , C 3 H 6 and C 4 H 8 on supported MoO 3 /Al 2 O 3 catalysts containing 6, 10 and 15 wt. % of MoO 3 at 25, 77 and 195 deg are determimed. Adsorption heat of an olefin increases with a growing length of its carbonic chain. The number of adsorbed olefin molecules grows with an increase in the MoO 3 concentration, while initial adsorption heats decrease. The number of adsorbed olefins is proportional to mean rate of molybdenum reduction in catalysts. Adsorption heats of oxygen on the surface of the catalysts with preliminarily adsorbed olefins are determined. It is shown that adsorption of oxygen and olefins proceeeds both on the same and on different centres of the surface. Mechanisms of surface interactions are discussed

  14. Temperature dependence of the Al2O3:C response in medical luminescence dosimetry

    DEFF Research Database (Denmark)

    Edmund, Jens Morgenthaler; Andersen, Claus Erik

    2007-01-01

    luminescence (OSL) signals in the room-to-body temperature region. We found that the OSL response changes with both irradiation and stimulation temperatures as well as the OSL integration time. We conclude that temperature effects on the OSL response can be removed by integration if the irradiation temperature...... is not varied. The RL response only depends on the irradiation temperature. We recommend that calibration should be carried out at the same irradiation temperature at which the measurement is performed (i.e. at body temperature for in vivo measurements). The overall change in the integrated OSL and RL signals......Over the last years, attention has been given to applications of Al2O3:C in space and medical dosimetry. One such application is in vivo dose verification in radiotherapy of cancer patients and here we investigate the temperature effects on the radioluminescence (RL) and optically stimulated...

  15. Radiation curing of γ-Al2O3 filled epoxy resin

    International Nuclear Information System (INIS)

    Kang, Phil Hyun; Kim, Dong Jin; Nho, Young Chang

    2003-01-01

    Epoxy resins are widely utilized as high performance thermosetting resins for many industrial applications but characterized by a relatively low toughness. Recently, the incorporation with rigid inorganic was suggested to improve the mechanical properties of epoxy resins. In the present work, an attempt has been taken to disperse nano-sized γ- Al 2 O 3 particles into diglycidyl ether of bisphenol-A (DGEBA) epoxy resins for improvement of the mechanical properties. These hybrid epoxy-alumina composites were prepared using by the γ-ray curing technique that was conducted with 100kGy under nitrogen at room temperature. The composites were characterized by determining gel content, UTM (Instron model 4443), SEM, FT-IR studies

  16. Effects of temperature and ionization density in medical luminescence dosimetry using Al2O3:C

    DEFF Research Database (Denmark)

    Edmund, Jens Morgenthaler

    2007-01-01

    by the combined efforts of energetic shallow traps and thermal excitation from intermediate states in deeper traps. In the study of ionization density, we investigated protons with energies between 10 and 60 MeV (4.57 to 1.08 keV/ìm in water). Experimentally, we observed that the initial OSL signal provided......) signal can be read out by stimulating the crystal with light. This thesis applies the initial part and the total area of the resulting OSL decay curve for dosimetry measurements and investigates the effects of temperature and proton energy, i.e. ionization density, on the RL and OSL signals from Al2O3:C...

  17. Wide band antireflective coatings Al2O3 / HfO2 / MgF2 for UV region

    Science.gov (United States)

    Winkowski, P.; Marszałek, Konstanty W.

    2013-07-01

    Deposition technology of the three layers antireflective coatings consists of hafnium compound are presented in this paper. Oxide films were deposited by means of e-gun evaporation in vacuum of 5x10-5 mbar in presence of oxygen and fluoride films by thermal evaporation. Substrate temperature was 250°C. Coatings were deposited onto optical lenses made from quartz glass (Corning HPFS). Thickness and deposition rate were controlled by thickness measuring system Inficon XTC/2. Simulations leading to optimization of thickness and experimental results of optical measurements carried during and after deposition process were presented. Physical thickness measurements were made during deposition process and were equal to 43 nm/74 nm/51 nm for Al2O3 / HfO2 / MgF2 respectively. Optimization was carried out for ultraviolet region from 230nm to the beginning of visible region 400 nm. In this region the average reflectance of the antireflective coating was less than 0.5% in the whole range of application.

  18. Microstructural characterization of HIP consolidated NiTi–nano Al2O3 composites

    International Nuclear Information System (INIS)

    Farvizi, M.; Ebadzadeh, T.; Vaezi, M.R.; Yoon, E.Y.; Kim, Y-J.; Kim, H.S.; Simchi, A.

    2014-01-01

    Highlights: • NiTi–6 wt.% nano α-Al 2 O 3 composites have been produced using a HIP method. • Both elemental and prealloyed powders were used for the fabrication of composites. • Generation of mismatch stress and intermetallics affected martensitic transformation. • Nanoparticles partially inhibited thermally induced martensitic transformation. • An interwoven austenite–martensite structure was observed in the composite samples. - Abstract: The microstructure and phase transformational behavior of NiTi-based composites reinforced with 6 wt.% of α-alumina nanoparticles have been investigated. Two kinds of starting materials, elemental Ni–Ti and prealloyed austenitic NiTi, were used to prepare the composites. The samples were consolidated using a hot isostatic pressing method. The X-ray diffraction results showed that while unreinforced NiTi mainly contained B2 phase at room temperature, martensitic B19′ phase appeared in the microstructure after addition of the α-alumina nanoparticles. The differential scanning calorimetry measurements indicated that the martensitic transformation temperatures were elevated in the composite samples, but the transformational enthalpy was reduced in comparison with the NiTi sample. It is believed that the generation of thermal mismatch stress during the sintering and the formation of small contents of NiTi 2 /Ni 3 Ti intermetallics in the composite samples are responsible for this increment of the martensitic transformation temperatures. Also, due to the nanometric size of α-Al 2 O 3 , a larger fraction of the matrix is disturbed by the presence of the nanoparticles, which yields the formation of effective barriers to the thermally induced martensitic transformation in the nanocomposite samples. The high-resolution transmission electron microscopy studies of the samples confirmed the higher defect density and partial microplastic deformation in the composite samples

  19. Preparation of porous Al2O3-Ti-C perform by combustion synthesis

    Directory of Open Access Journals (Sweden)

    K.Granat

    2009-04-01

    Full Text Available Using combustion synthesis porous ceramic preforms for composite reinforcing were produced. Prepared mixture of alumina Saffilfibres, Ti powder and graphite flakes, after drying were placed in waveguide of microwave reactor. Supplied with constant power of 540Wmagnetron ignited and maintained reaction in flowing stream of CO2 gas. Al2O3 fibres should improve preliminary endurance of perform,whereas Ti powder processed to hard titanium carbides and oxides. During microwave heating ignited plasma additionally improveprocess and partly fused metallic Ti. Recorded temperature curves were similar for various samples. The highest synthesis temperature revealed samples containing 10% of Al2O3 , 10% of Ti and 5% of graphite, all percentages atomic. Microscopic observation showed considerable microstructure inhomogeneity of some samples. Both irregular component ordering and partly processed Ti particles inside preform exclude them for subsequent infiltration. Chemical analyze EDS of Ti based compounds partly confirmed work purpose, evidencing presence of Ti oxides and carbides. Independently of graphite content these compounds formed folded strips around solid or empty volume. Depends on CO2 availability, reaction could be slowed down resulting in more compacted Ti compounds. Created as a result of combustion synthesis Ti compound after infiltration with liquid metal properly bounded with the matrix. It could be assumed that redox reaction proceeded and on surface of Ti compound alumina and Al-Ti compounds were created. The preforms of proper strength and homogeneous structure were infiltrated with AlSi7Mg by squeeze casting method. In relation to typical composite reinforced only with fibres no significant increase of defects quantity was observed. Preliminary examination of mechanical properties confirmed that assumed work purpose is reasonable.

  20. Preparation and photocatalytic properties of core-shell nano-TiO2 @ α-Al2O3 microspheres.

    Science.gov (United States)

    Jing, Mao-Xiang; Han, Chong; Wang, Zhou; Shen, Xiang-Qian

    2014-09-01

    Core-shell nano-TiO2@a-Al2O3 microspheres of 5-20 μm were prepared by the heterogeneous precipitation method combined with the hydro-thermal and calcination process using α-Al2O3 microspheres as substrate. Their morphologies, microstructure and crystalline phase were characterized by SEM and XRD respectively. The photocatalytic activity was evaluated by degradation of methyl orange. The as-prepared 10 wt.% nano-TiO2@α -Al2O3 microspheres possess α core-shell structure with a monolayer of nano-TiO2 particles less than 30 nm on the surface of α-Al2O3 microspheres. Their photocatalytic properties are largely influenced by the calcination temperature and the sample calcined at 800 degrees C for 2 h has the best photocatalytic activity. This high photocatalytic activity can be attributed to the synergetic effects of the unique structure of nano-TiO2 @α-Al2O3 microspheres, quantum size effect, composition of crystalline phase and crystallinity of nano-TiO2. These nano-TiO2@α-Al2O3 microspheres may be conveniently separable and useful in practical treatment of organic waste waters due to the large particle size and high photocatalytic properties.

  1. The improvement of the mechanical properties of PMMA denture base by Al2O3 particles with nitrile rubber

    Science.gov (United States)

    Alhareb, Ahmed Omran; Akil, Hazizan Md; Ahmad, Zainal Arifin

    2017-07-01

    Poly methyl methacrylate (PMMA) is mostly used for fabrication of denture base by heat-curing technique. Therefore, the purpose of this study is to investigate the effect of Al2O3 filler as toughening particles together with nitrile butadiene rubber (NBR) particles as impact modifier were used to reinforce PMMA denture base materials on the impact strength (IS) and fracture toughness (KIC). PMMA powder was mixed with liquid methyl methacrylate (MMA) and ethylene glycol dimethacrylate (EGDMA) as crosslinking agent. The powder components are PMMA, benzoyl peroxide, NBR (5, 7.5 and 10 wt%), and Al2O3 filler (5 wt%) treated by silane. The liquid components are 90% of methyl methacrylate and 10 % ethylene glycol dimethacryate. FTIR analyses confirmed that the Al2O3 filler was successfully treated with silane as coupling agent. The morphology of fracture surfaces was characterized using field emission scanning electron microscopy (FESEM). The results shown that IS and KIC improved significantly when using treated the Al2O3 filler. IS has increased to 56% (8.26 KJ/m2) and 73% (2.77 MPa.m1/2) for KIC when treated Al2O3 filler compared to unreinforced PMMA matrix. Statistical analyses of data results were significantly improved (P<0.05) when using 7.5 wt% NBR with treated Al2O3 filler compared to other the compositions.

  2. Relation of lifetime to surface passivation for atomic-layer-deposited Al2O3 on crystalline silicon solar cell

    International Nuclear Information System (INIS)

    Cho, Young Joon; Song, Hee Eun; Chang, Hyo Sik

    2015-01-01

    Highlights: • We investigated the relation of potassium contamination on Si solar wafer to lifetime. • We deposited Al 2 O 3 layer by atomic layer deposition (ALD) on Si solar wafer after several cleaning process. • Potassium can be left on Si surface by incomplete cleaning process and degrade the Al 2 O 3 passivation quality. - Abstract: We investigated the relation of potassium contamination on a crystalline silicon (c-Si) surface after potassium hydroxide (KOH) etching to the lifetime of the c-Si solar cell. Alkaline solution was employed for saw damage removal (SDR), texturing, and planarization of a textured c-Si solar wafer prior to atomic layer deposition (ALD) Al 2 O 3 growth. In the solar-cell manufacturing process, ALD Al 2 O 3 passivation is utilized to obtain higher conversion efficiency. ALD Al 2 O 3 shows excellent surface passivation, though minority carrier lifetime varies with cleaning conditions. In the present study, we investigated the relation of potassium contamination to lifetime in solar-cell processing. The results showed that the potassium-contaminated samples, due to incomplete cleaning of KOH, had a short lifetime, thus establishing that residual potassium can degrade Al 2 O 3 surface passivation

  3. Thin-film-based sensitivity enhancement for total internal reflection fluorescence live-cell imaging.

    Science.gov (United States)

    Kim, Kyujung; Cho, Eun-Jin; Huh, Yong-Min; Kim, Donghyun

    2007-11-01

    We investigated experimentally the evanescent field enhancement based on dielectric thin films in total internal reflection microscopy. The sample employed two layers of Al2O3 and SiO2 deposited on an SF10 glass substrate. Field intensity enhancement measured by fluorescent excitation of microbeads relative to that of a control sample without dielectric films was polarization dependent, determined as 4.2 and 2.4 for TE and TM polarizations, respectively, and was in good agreement with numerical results. The thin-film-based field enhancement was also applied to live-cell imaging of quantum dots, which confirmed the sensitivity enhancement qualitatively.

  4. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  5. Corrosion Protection of Copper Using Al2O3, TiO2, ZnO, HfO2, and ZrO2Atomic Layer Deposition.

    Science.gov (United States)

    Daubert, James S; Hill, Grant T; Gotsch, Hannah N; Gremaud, Antoine P; Ovental, Jennifer S; Williams, Philip S; Oldham, Christopher J; Parsons, Gregory N

    2017-02-01

    Atomic layer deposition (ALD) is a viable means to add corrosion protection to copper metal. Ultrathin films of Al 2 O 3 , TiO 2 , ZnO, HfO 2 , and ZrO 2 were deposited on copper metal using ALD, and their corrosion protection properties were measured using electrochemical impedance spectroscopy (EIS) and linear sweep voltammetry (LSV). Analysis of ∼50 nm thick films of each metal oxide demonstrated low electrochemical porosity and provided enhanced corrosion protection from aqueous NaCl solution. The surface pretreatment and roughness was found to affect the extent of the corrosion protection. Films of Al 2 O 3 or HfO 2 provided the highest level of initial corrosion protection, but films of HfO 2 exhibited the best coating quality after extended exposure. This is the first reported instance of using ultrathin films of HfO 2 or ZrO 2 produced with ALD for corrosion protection, and both are promising materials for corrosion protection.

  6. Effect of Al2O3sf addition on the friction and wear properties of (SiCp+Al2O3sf)/Al2024 composites fabricated by pressure infiltration

    Science.gov (United States)

    Xu, Hui; Zhang, Gong-zhen; Cui, Wei; Ren, Shu-bin; Wang, Qian-jin; Qu, Xuan-hui

    2018-03-01

    Aluminum (Al) 2024 matrix composites reinforced with alumina short fibers (Al2O3sf) and silicon carbide particles (SiCp) as wear-resistant materials were prepared by pressure infiltration in this study. Further, the effect of Al2O3sf on the friction and wear properties of the as-synthesized composites was systematically investigated, and the relationship between volume fraction and wear mechanism was discussed. The results showed that the addition of Al2O3sf, characterized by the ratio of Al2O3sf to SiCp, significantly affected the properties of the composites and resulted in changes in wear mechanisms. When the volume ratio of Al2O3sf to SiCp was increased from 0 to 1, the rate of wear mass loss ( K m) and coefficients of friction (COFs) of the composites decreased, and the wear mechanisms were abrasive wear and furrow wear. When the volume ratio was increased from 1 to 3, the COF decreased continuously; however, the K m increased rapidly and the wear mechanism became adhesive wear.

  7. Kinetics for Steam and CO2 Reforming of Methane Over Ni/La/Al2O3 Catalyst.

    Science.gov (United States)

    Park, Myung Hee; Choi, Bong Kwan; Park, Yoon Hwa; Moon, Dong Ju; Park, Nam Cook; Kim, Young Chul

    2015-07-01

    Kinetic studies of mixed (steam and dry) reforming of methane on Ni/La/Al2O3 and Ni/La-Co (1, 3 wt%)/Al2O3 catalysts were performed in an atmospheric fixed-bed reactor. Kinetic parameters for the mixed reforming over these catalysts were obtained under reaction conditions free from heat and mass transfer limitations. Variables for the mixed reforming were the reaction temperature and partial pressure of reactants. The fitting of the experimental data for the rate of methane conversion, rCH4, using the power law rate equation rCH4 = k(PrCH4)α(PCO2)β(PH2O)γ showed that the reaction orders α, β, and γ are steady and obtained values equal to α = 1, β = 0, and γ = 0. In other words, among CH4, CO2, H2O, and H2, only CH4 reaction orders were not zero and they were affected by the promoters. The apparent activation energy on catalysts Ni/La/Al2O3, Ni/La-Co (1)/Al2O3 and Ni/La-Co (3)/Al2O3 is 85.2, 93.8, and 99.4 kJ/mol, respectively. The addition of Co to Ni/La/Al2O3 was increased the apparent activation energy of the mixed reforming reaction. And the Ni/La-Co (3 wt%)/Al2O3 catalyst showed the highest reforming activity and apparent activation energy. The Co promoters can increase the apparent activation energy of mixed reforming of methane.

  8. A theoretical and experimental XAS study of monolayer dispersive supported CuO/γ-Al2O3 catalysts

    International Nuclear Information System (INIS)

    Chen Dongliang; Wu Ziyu

    2006-01-01

    The local structures of supported CuO/γ-Al 2 O 3 monolayer dispersive catalysts with different CuO loadings have been investigated by EXAFS and multiple scattering XANES simulations. The EXAFS results show that the first nearest neighbors around the Cu atoms in the CuO/γ-Al 2 O 3 catalysts are similar to that of the polycrystalline CuO powder, which is independent of the CuO loadings. Moreover, the Cu K-XANES FEFF8 calculations for CuO reveal that the monolayer-dispersed CuO species are of small distorted (CuO 4 ) m n+ clusters, which is mainly composed of a distorted CuO 6 octahedron incorporated in the surface octahedral vacant sites of the γ-Al 2 O 3 support. We consider that the CuO species for the CuO/γ-Al 2 O 3 catalysts with loadings of 0.4 and 0.8 mmol/100 m 2 are distorted (CuO 4 ) m n+ clusters composed mainly of a distorted CuO 6 octahedron incorporated in the surface octahedral vacant sites of the γ-Al 2 O 3 support after calcinations at high temperature in air for a few hours. On the contrary, for the CuO/γ-Al 2 O 3 with loading of 1.2 mmol/100 m 2 , the local structure of Cu atoms in CuO/γ-Al 2 O 3 is similar to that of polycrystalline CuO powder

  9. Antibacterial potential of Al2O3 nanoparticles against multidrug resistance strains of Staphylococcus aureus isolated from skin exudates

    Science.gov (United States)

    Ansari, Mohammad Azam; Khan, Haris M.; Khan, Aijaz A.; Pal, Ruchita; Cameotra, Swaranjit Singh

    2013-10-01

    To date very little studies are available in the literature on the interaction of Al2O3 nanoparticles with multidrug-resistant strains of Staphylococcus aureus. Considering the paucity of earlier reports the objective of present study was to investigate the antibacterial activity of Al2O3 NPs (methicillin-resistant S. aureus and methicillin-resistant coagulase negative staphylococci by various methods. Al2O3 NPs were characterized by scanning electron microscopy, high-resolution transmission electron microscopy, and X-ray diffraction. The MIC was found to be in the range of 1,700-3,400 μg/ml. Almost no growth was observed at 2,000 μg/ml for up to 10 h. SEM micrograph revealed that the treated cells were significantly damaged, showed indentation on cell surface and clusters of NPs on bacterial cell wall. HR-TEM micrograph shows disruption and disorganization of cell membrane and cell wall. The cell membrane was extensively damaged and, most probably, the intracellular content has leaked out. Al2O3 NPs not only adhered at the surface of cell membrane, but also penetrated inside the bacterial cells, cause formation of irregular-shaped pits and perforation on their surfaces and may also interact with the cellular macromolecules causing adverse effect including cell death. The data presented here are novel in that Al2O3 NPs are effective bactericidal agents regardless of the drug resistance mechanisms that confer importance to these bacteria as an emergent pathogen. Therefore, in depth studies regarding the interaction of Al2O3 NPs with cells, tissues, and organs as well as the optimum dose required to produce therapeutic effects need to be ascertained before we can expect a more meaningful role of the Al2O3 NPs in medical application.

  10. Influência de aditivos dispersantes nas propriedades de concretos refratários de Al2O3 e Al2O3-MgO Influence of dispersants in Al2O3 and Al2O3-MgO refractory castables

    Directory of Open Access Journals (Sweden)

    I. R. de Oliveira

    2004-03-01

    Full Text Available O estado de dispersão das partículas constituintes da matriz de concretos apresenta uma influência direta no comportamento reológico desses materiais, determinando as técnicas que podem ser usadas para a sua aplicação. Diferentes aditivos são utilizados visando uma dispersão eficiente, a qual constitui um requisito importante na otimização do empacotamento das partículas e da resistência mecânica de concretos. Entretanto, a influência desses aditivos nas propriedades de concretos tem sido muito pouco estudada. Neste trabalho investigou-se o efeito de três dispersantes nas propriedades e desempenho na secagem de diferentes composições refratárias. A presença de poliacrilato de sódio resultou em concretos com elevada permeabilidade e maior porosidade. Por outro lado, em composições no sistema Al2O3-MgO a presença de hexametafosfato de sódio proporcionou concretos com permeabilidade extremamente baixa acarretando numa secagem mais lenta, enquanto o ácido cítrico apresentou um desempenho intermediário. Tais efeitos nas propriedades dos concretos foram correlacionados às características intrínsecas dos aditivos.The state of dispersion of the castables matrix particles presents a direct influence in their rheological behavior, determining the techniques that can be used for their installation. Different additives have been used aiming an efficient dispersion, which constitutes an important requirement in the optimization of the particles packing and mechanical resistance of castables. However, the influence of those additives in the castables properties has not been extensively studied. In this work, the effect of 3 dispersants was investigated in the properties and drying behavior of different refractory compositions. The presence of sodium polyacrylate resulted in castables with higher permeability and larger porosity. On the other hand, in Al2O3-MgO compositions the presence of sodium hexametaphosphate provided

  11. Characterization of humic acid reactivity modifications due to adsorption onto α-Al 2O 3

    KAUST Repository

    Janot, Noémie

    2012-03-01

    Adsorption of purified Aldrich humic acid (PAHA) onto α-Al 2O 3 is studied by batch experiments at different pH, ionic strength and coverage ratios R (mg of PAHA by m 2 of mineral surface). After equilibration, samples are centrifuged and the concentration of PAHA in the supernatants is measured. The amount of adsorbed PAHA per m 2 of mineral surface is decreasing with increasing pH. At constant pH value, the amount of adsorbed PAHA increases with initial PAHA concentration until a pH-dependent constant value is reached. UV/Visible specific parameters such as specific absorbance SUVA 254, ratio of absorbance values E 2/E 3 and width of the electron-transfer absorbance band Δ ET are calculated for supernatant PAHA fractions of adsorption experiments at pH 6.8, to have an insight on the evolution of PAHA characteristics with varying coverage ratio. No modification is observed compared to original compound for R≥20mgPAHA/gα-Al2O3. Below this ratio, aromaticity decreases with initial PAHA concentration. Size-exclusion chromatography - organic carbon detection measurements on these supernatants also show a preferential adsorption of more aromatic and higher-sized fractions. Spectrophotometric titrations were done to estimate changes of reactivity of supernatants from adsorption experiments made at pH ≈6.8 and different PAHA concentrations. Evolutions of UV/Visible spectra with varying pH were treated to obtain titration curves that are interpreted within the NICA-Donnan framework. Protonation parameters of non-sorbed PAHA fractions are compared to those obtained for the PAHA before contact with the oxide. The amount of low proton-affinity type of sites and the value of their median affinity constant decrease after adsorption. From PAHA concentration in the supernatant and mass balance calculations, "titration curves" are experimentally proposed for the adsorbed fractions for the first time. These changes in reactivity to our opinion could explain the difficulty

  12. Electric field control of the γ-Al2O3/SrTiO3 interface conductivity at room temperature

    DEFF Research Database (Denmark)

    Christensen, Dennis Valbjørn; Trier, Felix; von Soosten, Merlin

    2016-01-01

    Controlling interfaces using electric fields is at the heart of modern electronics. The discovery of the conducting interface between the two insulating oxides LaAlO3 (LAO) and SrTiO3 (STO) has led to a number of interesting electric field-dependent phenomena. Recently, it was shown that replacing...... LAO with a spinel γ-Al2O3 (GAO) allows a good pseudo-epitaxial film growth and high electron mobility at low temperatures. Here, we show that the GAO/STO interface resistance, similar to LAO/STO, can be tuned by orders of magnitude at room temperature using the electric field of a backgate...

  13. Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 °C

    Science.gov (United States)

    Choi, J. Y.; Kim, S.; Hwang, B.-U.; Lee, N.-E.; Lee, S. Y.

    2016-12-01

    Silicon indium zinc oxide (SIZO) thin film transistors (TFTs) have been fabricated on a flexible polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly-4vinyl phenol (PVP) and Al2O3. To improve the mechanical stability, Al2O3 has been used as a buffer layer on the flexible substrate. The Al2O3 layer of hybrid gate dielectrics protected the organic gate dielectric and improved mechanical flexibility. The different surface roughness of the gate dielectrics is investigated. The performance of the device with smooth surface roughness was significantly improved. Finally, the electrical characteristics of the TFTs with hybrid gate dielectrics were measured as well as the promising electrical endurance characteristics at the bending radius of 5 mm.

  14. Estimation of Al2O3 critical temperature using a Langmuir probe in laser ablation

    Science.gov (United States)

    Yahiaoui, K.; Abdelli-Messaci, S.; Messaoud Aberkane, S.; Kellou, A.

    2016-11-01

    Pulsed laser deposition (PLD) has demonstrated its capacity in thin films growing under the moderate laser intensity. But when the laser intensity increases, the presence of droplets on the thin film limits the PLD efficiency such that the process needs an optimization study. In this way, an experimental study has been conducted in order to correlate between the appearance of those droplets and the laser fluence. The comprehension of the physical mechanism during ablation and the control of the deposition parameters allowed to get a safe process. Our experiment consists in measuring the amount of ejected matter from polycrystalline alumina target as a function of the laser fluence when irradiated by a KrF laser. According to laser fluence, several kinds of ablation regimes have been identified. Below a threshold value found as 12 J/cm2, the mechanism of ablation was assigned to normal evaporation, desorption and nonthermal processes. While above this threshold value, the mechanism of ablation was assigned to phase explosion phenomenon which is responsible of droplets formation when the surface temperature approaches the critical temperature T tc. A negative charge collector was used to collect the positive ions in the plume. Their times of flight (TOF) signal were used to estimate the appropriate T tc for alumina target. Ions yield, current as well as kinetic energy were deduced from the TOF signal. Their evolutions show the occurrence of an optical breakdown in the vapor plume which is well correlated with the onset of the phase explosion phenomenon. At 10 J/cm2, the ions velocities collected by the probe have been compared to those obtained from optical emission spectroscopy diagnostic and were discussed. To prove the occurrence of phase explosion by the appearance of droplets, several thin films were elaborated on Si (100) substrate at different laser fluence into vacuum. They have been characterized by scanning electron microscope. The results were well

  15. Methanobactin-Mediated Synthesis of Gold Nanoparticles Supported over Al2O3 toward an Efficient Catalyst for Glucose Oxidation

    Directory of Open Access Journals (Sweden)

    Jia-Ying Xin

    2014-11-01

    Full Text Available Methanobactin (Mb is a copper-binding peptide that appears to function as an agent for copper sequestration and uptake in methanotrophs. Mb can also bind and reduce Au(III to Au(0. In this paper, Au/Al2O3 catalysts prepared by a novel incipient wetness-Mb-mediated bioreduction method were used for glucose oxidation. The catalysts were characterized, and the analysis revealed that very small gold nanoparticles with a particle size <4 nm were prepared by the incipient wetness-Mb-mediated bioreduction method, even at 1.0% Au loading (w/w. The influence of Au loading, calcination temperature and calcination time on the specific activity of Au/Al2O3 catalysts was systematically investigated. Experimental results showed that decomposing the Mb molecules properly by calcinations can enhance the specific activity of Au/Al2O3 catalysts, though they acted as reductant and protective agents during the catalyst preparation. Au/Al2O3 catalysts synthesized by the method exhibited optimum specific activity under operational synthesis conditions of Au loading of 1.0 wt % and calcined at 450 °C for 2 h. The catalysts were reused eight times, without a significant decrease in specific activity. To our knowledge, this is the first attempt at the preparation of Au/Al2O3 catalysts by Mb-mediated in situ synthesis of gold nanoparticles.

  16. Physico–chemical properties of CdO–Al2O3 catalysts. I – Structural characteristics

    Directory of Open Access Journals (Sweden)

    M.N. Alaya

    2014-11-01

    TG–DTA patterns of uncalcined samples were analyzed and the XRD of all 1000 °C-products and some selected samples calcined at 400–800 °C were investigated. The thermal behaviors of pure and mixed gels depend on the precipitating agent, pH of precipitation, chemical composition and method of preparation. Generally, calcination at temperatures below 800 °C gave poorly crystalline phases. Well crystalline phases are obtained at 800 and 1000 °C. For pure alumina γ-Al2O3 was shown as 400 °C-calcination product that transforms into the δ form around 900 °C and later to θ-Al2O3 as a major phase and α-Al2O3 as a minor phase at 1000 °C. CdO was shown by 500 °C-calcined cadmia gel that showed color changes with rise of calcination temperature. The most stable black cadmium oxide phase (Monteponite is obtained upon calcination at 1000 °C. Thousand degree celsius- calcined mixed oxides showed θ-Al2O3, α-Al2O3, CdAl2O4 and monteponite which dominate depending on the chemical composition.

  17. (Oxo)(Fluoro)-Aluminates in KF-Al2O3System: Thermal Stability and Structural Correlation.

    Science.gov (United States)

    Šimko, František; Rakhmatullin, Aydar; Florian, Pierre; Kontrík, Martin; Korenko, Michal; Netriová, Zuzana; Danielik, Vladimír; Bessada, Catherine

    2017-11-06

    Precise investigation of part of the phase diagram of KF-Al 2 O 3 system was performed in an experiment combining different techniques. Solidified mixtures of KF-Al 2 O 3 were studied by X-ray powder diffraction and high-field solid-state NMR spectroscopy over a wide range of compositions. To help with the interpretation of the NMR spectra of the solidified samples found as complex admixtures, we synthesized the following pure compounds: KAlO 2 , K 2 Al 22 O 34 , α-K 3 AlF 6 , KAlF 4 , and K 2 Al 2 O 3 F 2 . These compounds were then characterized using various solid-state NMR techniques, including MQ-MAS and D-HMQC. NMR parameters of the pure compounds were finally determined using first-principles density functional theory calculations. The phase diagram of KF-Al 2 O 3 with the alumina content up to 30 mol % was determined by means of thermal analysis. Thermal analysis was also used for the description of the thermal stability of one synthesized compound, K 2 Al 2 O 3 F 2 .

  18. A study of the effect of Al2O3 reflector on response function of NaI(Tl) detector

    International Nuclear Information System (INIS)

    Tam, Hoang Duc; Chuong, Huynh Dinh; Thanh, Tran Thien; Van Tao, Chau

    2016-01-01

    This study aims to assess the effect of Al 2 O 3 reflector surrounding the NaI(Tl) crystal on the detector response function, based on Monte Carlo simulation, which can verify the precise model of the NaI(Tl) detector. The method used in determining the suitable thickness of Al 2 O 3 reflector is to compare the calculated and experimental values of full-energy peak efficiency. The results show that the Al 2 O 3 reflector should have a thickness of 0.8–1.2 mm for the maximum deviation between the experimental and simulated efficiency of 3.2% at all concerning energies. In addition, the obtained results are in good agreement with the response function of simulation and experimental spectra. - Highlights: • The study was conducted to verify the model of Monte Carlo simulation. • The effect of Al 2 O 3 reflector on the detector response function was investigated. • The optimum thickness of Al 2 O 3 reflector is suggested.

  19. Interfacial and electrical characterization of HfO2/Al2O3/InAlAs structures

    Science.gov (United States)

    Wu, Li-fan; Zhang, Yu-ming; Lu, Hong-liang; Zhang, Yi-men

    2015-11-01

    The HfO2/Al2O3 double layer has been deposited by the atomic layer deposition (ALD) technique to a InAlAs epitaxial layer. The chemical composition at the interface was revealed by angle-resolved X-ray photoelectron spectroscopy (XPS). The electrical properties of the ALD-HfO2/Al2O3/InAlAs metal-oxide-semiconductor (MOS) capacitor have been investigated and compared with those of the ALD-HfO2/InAlAs capacitor. It is demonstrated that the insertion of the Al2O3 layer can decrease interfacial oxidation and trap charge formation. Compared with the HfO2/InAlAs capacitor, the HfO2/Al2O3/InAlAs capacitor exhibits better electrical properties with reduced hysteresis and decreasing stretch-out of the capacitance-voltage (C-V) characteristics, and the oxide trapped charge (Qot) value is significantly decreased after inserting the Al2O3 interlayer.

  20. Preparation and characterisation of a sol-gel process α-Al2O3 polycrystalline detector

    International Nuclear Information System (INIS)

    Ferreira, H.R.; Santos, A.

    2015-01-01

    This article presents the dosimetric characteristics of α-Al 2 O 3 detectors prepared through the sol-gel process, disc pressing and sintering in a highly reducing atmosphere. Comparative tests between the sol-gel process α-Al 2 O 3 polycrystalline and anion-defective α-Al 2 O 3 :C single-crystal detectors indicate that the ones prepared through this approach present good dosimetric characteristics similar to those found in single-crystal detectors, such as a simple glow curve with the main peak at ∼198 deg. C (2 deg. C s -1 ), high sensitivity, a detection threshold of 1.7 μGy, linearity of response, low fading, relatively low photon energy dependence, reusability without annealing and good reproducibility. However, the undesirable feature of heating rate dependence of the thermoluminescence (TL) output in α-Al 2 O 3 :C single crystal is practically non-existent in the sol-gel process α-Al 2 O 3 polycrystalline detector. This characteristic renders it useful for the routine processing of large numbers of personal and environmental dosemeters at higher heating rates and also when it comes to the proposal for new approaches to thermal quenching investigation. (authors)

  1. Enhanced dielectric properties of epoxy resin with high content of nano-Al2O3 composites

    Science.gov (United States)

    Xu, Dandan; Wang, Tingting; Han, Xinghao; Qiao, Ru

    2018-01-01

    Epoxy resin was modified by adding different contents (30%, 60% wt.) of nano-Al2O3 particles, which were modified by silicon coupling agent KH560 (γ-amino propyl triethoxy silane), in the form of nano-Al2O3 particles/epoxy composites, via casting method to improve the dielectric properties. The chemical structures of modified and unmodified nano-Al2O3 particles and the morphologies of composites fractures were characterized by Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM) respectively. And the thermal property and dielectric properties were also investigated. The results showed the modified nano-Al2O3 particles well dispersed in the epoxy matrix and the thermal stability of composites was improved. And the dielectric constant of the composites was up to 14 when the content of nano-Al2O3 was 60%, which was 2 times larger than that of pure epoxy. Moreover, the composites also exhibited good dielectric property under high frequencies ranged from 1x107 to 4x107 Hz.

  2. Pembuatan Katalis Asam (Ni/γ-Al2O3 dan Katalis Basa (Mg/γ-Al2O3 untuk Aplikasi Pembuatan Biodiesel dari Bahan Baku Minyak Jelantah

    Directory of Open Access Journals (Sweden)

    . Savitri

    2016-05-01

    Full Text Available Biodiesel is an alternative energy fuel a substitute for diesel oil produced from vegetable oil or animal fat which have the advantage easily used, they are biodegradable, not toxic and sulfur free. This research aims to do process of prosucing biodiesel using acid catalysts (Ni/γ-Al2O3 for a esterification process and base catalyst (Mg/γ-Al2O3 for transesterification  process with the variation of catalyst concentration Ni/γ-Al2O3 (0.5%; 0.75%; 1% and 2% and the time (60 minutes, 120 minutes, and 180 minutes. Research of methodology starting to the process impregnation Ni and Mg metal into a buffer γ-Al2O3, characterization a catalyst with XRD, FTIR, and the SAA, and the esterification process to lower levels of FFA and transesterification process for making it biodiesel. The characterization with X-RD does not appear a new peak, only just occurred a shift peak, and declines intensity of Ni/γ-Al2O3 and Mg/γ-Al2O3. The analysis result of the SAA, a decline in the surface area (the decline in active side of catalyst suspected the process impregnation not run perfect because Ni and Mg metal only distributed on the surface of buffer pore. The results of the FTIR analysis does not occur the addition of acidity and alkalinity. The steady of catalyst concentration from esterification process is 1% within 120 minutes produce levels of FFA 6.85%.  Keywords: Biodiesel, esterification, impregnation, used cooking oil, transesterificationDOI : http://dx.doi.org/10.15408/jkv.v2i1.3104

  3. The Influence of impact on Composite Armour System Kevlar-29/polyester-Al2O3

    International Nuclear Information System (INIS)

    Ramadhan, A A; Talib, A R Abu; Rafie, A S Mohd; Zahari, R

    2012-01-01

    An experimental investigation of high velocity impact responses of composite laminated plates using a helium gas gun has been presented in this paper. The aim of this study was to develop the novel composite structure that meets the specific requirements of ballistic resistance which used for body protections, vehicles and other applications. Thus the high velocity impact tests were performed on composite Kevlar-29 fiber/polyester resin with alumina powder (Al 2 O 3 ). The impact test was conducted by using a cylindrical steel projectile of 7.62mm diameter at a velocity range of 160-400 m/s. The results (shown in this work) are in terms of varying plate thickness and the amount of energy absorbed by the laminated plates meanwhile we obtained that the 12mm thickness of composite plate suitable for impact loading up to 200m/s impact velocity. Therefore this composite structure (it is used to reduce the amount of Kevlar) considered most economical armoure products. We used the ANSYS AUTODYN 3D- v.12 software for our simulations. The results have been obtained a4.1% maximum errors with experimental work of energy absorption.

  4. Microstructure and Wear Resistance of Al2O3 Coatings on Functional Structure

    Directory of Open Access Journals (Sweden)

    Jiang Chao-Ping

    2016-01-01

    Full Text Available To enhance the wear properties of function structure, Al2O3-13%TiO2 (AT13 coatings were plasma sprayed on 45 steel functional structure using micro and nano powders. The microstructures and phase compositions of the coatings were investigated by scanning electron microscopy and X-ray diffraction, respectively. Results show that the nano powder coating consists of fully-melted region and partially-melted region. The fully-melted regions show a lamellar structure, while the partially-melted regions retain the powders structure. The phases of coatings are α-A12O3 and TiO2.The wear test was carried out on a ML-10 friction and wear tester under dry sliding condition. It is found that the wear resistance of the micro powder coating is higher than that of nano powder coating. This is mainly ascribe to the breakage of the nano powder coating resulted from low agglomerated binding force.

  5. Thermo-luminescence and photoluminescence studies of Al2O3 irradiated with heavy ions

    International Nuclear Information System (INIS)

    Jheeta, K.S.

    2008-06-01

    Thermo-luminescence (TL) spectra of single crystals of Al 2 O 3 (sapphire) irradiated with 200 MeV swift Ag ions at different fluence in the range 1x10 11 to 1x10 13 ions/cm 2 has been recorded at room temperature by keeping the warming rate 2K/min. The TL glow curve of the irradiated samples has a simple structure with a prominent peak at ∼ 500 K with one small peak at 650 K. The intensity of main peak increases with the ion fluence. This has been attributed to the creation of new traps on irradiation. Also, a shift of 8 K in the peak position towards low temperature side has been observed at higher fluence 1x10 13 ions/cm 2 . In addition, photoluminescence (PL) spectra of irradiated samples have been recorded at room temperature upon 2.8 eV excitation. A broad band consisting of mainly two emission bands, respectively at 2.5 and 2.3 eV corresponding to F 2 and F 2 2+ defect centers is observed. The intensity of these bands shows an increasing trend up to fluence 5x10 12 ions/cm 2 and then decreases at higher fluence 1x10 13 ions/cm 2 . The results are interpreted in terms of creation of newly defect centers, clustering/aggregation and radiation-induced annihilation of defects. (author)

  6. Numerical Study of Heat Transfer Enhancement in Heat Exchanger Using AL2O3 Nanofluids

    Directory of Open Access Journals (Sweden)

    Hussein Talal Dhaiban

    2016-04-01

    Full Text Available In this study, the flow and heat transfer characteristics of Al2O3-water nanofluids for a range of the Reynolds number of 3000, 4500, 6000 and 7500 with a range of volume concentration of 1%, 2%, 3% and 4% are studied numerically. The test rig consists of cold liquid loop, hot liquid loop and the test section which is counter flow double pipe heat exchanger with 1m length. The inner tube is made of smooth copper with diameter of 15mm. The outer tube is made of smooth copper with diameter of 50mm. The hot liquid flows through the outer tube and the cold liquid (or nanofluid flow through the inner tube. The boundary condition of this study is thermally insulated the outer wall with uniform velocity at (0.2, 0.3, 0.4 and 0.5 m/s at the cold loop and constant velocity at (0.5 m/s at the hot loop. The results show that the heat transfer coefficient and Nusselt number increased by increasing Reynolds number and particle concentration. Numerical results indicate that the maximum enhancement in Nusselt number and heat transfer coefficient were 9.5% and 13.5% respectively at Reynolds number of 7100 and particles volume fraction of 4%. Results of nanofluids also showed a good agreement with the available empirical correlation at particles volume fractions of 1%, 2% and 3%, but at volume fractions of 4% a slight deviation is obtained.

  7. Numerical investigation of Al2O3/water nanofluid laminar convective heat transfer through triangular ducts

    Directory of Open Access Journals (Sweden)

    Zeinali Heris Saeed

    2011-01-01

    Full Text Available Abstract In this article, laminar flow-forced convective heat transfer of Al2O3/water nanofluid in a triangular duct under constant wall temperature condition is investigated numerically. In this investigation, the effects of parameters, such as nanoparticles diameter, concentration, and Reynolds number on the enhancement of nanofluids heat transfer is studied. Besides, the comparison between nanofluid and pure fluid heat transfer is achieved in this article. Sometimes, because of pressure drop limitations, the need for non-circular ducts arises in many heat transfer applications. The low heat transfer rate of non-circular ducts is one the limitations of these systems, and utilization of nanofluid instead of pure fluid because of its potential to increase heat transfer of system can compensate this problem. In this article, for considering the presence of nanoparticl: es, the dispersion model is used. Numerical results represent an enhancement of heat transfer of fluid associated with changing to the suspension of nanometer-sized particles in the triangular duct. The results of the present model indicate that the nanofluid Nusselt number increases with increasing concentration of nanoparticles and decreasing diameter. Also, the enhancement of the fluid heat transfer becomes better at high Re in laminar flow with the addition of nanoparticles.

  8. Absorption and photoluminescence study of Al 2O 3 single crystal irradiated with fast neutrons

    Science.gov (United States)

    Izerrouken, M.; Benyahia, T.

    2010-10-01

    Colour centers formation in Al 2O 3 by reactor neutrons were investigated by optical measurements (absorption and photoluminescence). The irradiation's were performed at 40 °C, up to fast neutron ( E n > 1.2 MeV) fluence of 1.4 × 10 18 n cm -2. After irradiation the coloration of the sample increases with the neutron fluence and absorption band at about 203, 255, 300, 357 and 450 nm appear in the UV-visible spectrum. The evolution of each absorption bands as a function of fluence and annealing temperature is presented and discussed. The results indicate that at higher fluence and above 350 °C the F + center starts to aggregate to F center clusters (F 2, F 2+ and F22+). These aggregates disappear completely above 650 °C whereas the F and F + centers persist even after annealing at 900 °C. It is clear also from the results that the absorption band at 300 nm is due to the contribution of both F 2 center and interstitial Ali+ ions.

  9. The Influence of impact on Composite Armour System Kevlar-29/polyester-Al2O3

    Science.gov (United States)

    Ramadhan, A. A.; Abu Talib, A. R.; Mohd Rafie, A. S.; Zahari, R.

    2012-09-01

    An experimental investigation of high velocity impact responses of composite laminated plates using a helium gas gun has been presented in this paper. The aim of this study was to develop the novel composite structure that meets the specific requirements of ballistic resistance which used for body protections, vehicles and other applications. Thus the high velocity impact tests were performed on composite Kevlar-29 fiber/polyester resin with alumina powder (Al2O3). The impact test was conducted by using a cylindrical steel projectile of 7.62mm diameter at a velocity range of 160-400 m/s. The results (shown in this work) are in terms of varying plate thickness and the amount of energy absorbed by the laminated plates meanwhile we obtained that the 12mm thickness of composite plate suitable for impact loading up to 200m/s impact velocity. Therefore this composite structure (it is used to reduce the amount of Kevlar) considered most economical armoure products. We used the ANSYS AUTODYN 3D- v.12 software for our simulations. The results have been obtained a4.1% maximum errors with experimental work of energy absorption.

  10. Damage threshold and structure of swift heavy ion tracks in Al2O3

    Science.gov (United States)

    Rymzhanov, R. A.; Medvedev, N.; Volkov, A. E.

    2017-11-01

    Structure changes and their formation threshold in swift heavy ion (SHI) tracks in Al2O3 are studied using a combined start-to-end numerical model. The hybrid approach consists of the Monte-Carlo code TREKIS, describing kinetics of the electronic subsystem, and classical Molecular Dynamics for lattice atoms. The developed approach is free from a posteriori fitting parameters. Simulations of Xe 167 MeV ion impacts show that relaxation of an excess lattice energy results in formation of a cylindrical discontinuous disordered region of about 2 nm in diameter. Recent transmission electron microscopy observations agree with these results. The threshold of an SHI track formation is estimated to be ~6.1 keV nm‑1. Calculated x-ray diffraction patterns of irradiated material demonstrate more pronounced damage of the Al atoms sublattice near SHI trajectories. Modeling of Xe ion tracks overlapping demonstrates that the damaged area can be restored to a near virgin state. Estimations give 6.5 nm as the minimal distance between the Xe ion trajectories resulting in recovery of the transformed structure produced by the previous ion.

  11. Preparation of Pd/γ- Al2O3 catalyst utilized in chemisorption of hydrogen isotopes

    International Nuclear Information System (INIS)

    David, Elena; Stefanescu, Doina; Stanciu, V.

    1997-01-01

    Separation and hydrogen isotope determination require packings with special properties, utilizable in separation columns. Consequently, such packings as catalysts using γ-aluminia and metallic palladium active component as holder were obtained. The γ-aluminia used as holder has been prepared starting from λ salts, easy soluble in water, such as Al 2 (NO 3 ) 3 ·9H 2 O, at a preset (6.2-6.4) controlled pH. At a first stage the Al(OH) 3 results which by calcination at controlled temperature transforms in γ-Al 2O3 . On this holder, in which the specific surface and porosity has been determined, metallic palladium has been deposed, using for impregnation a 2% PdCl 2 solution. The content of deposed palladium was determined as the difference between the content in the initial solution and solution remaining after holder impregnation. This content has been determined by atomic absorption and is within 0.5 - 1.2% Pd. After impregnation the catalyst has been dried, then granulated at the 0.16 mm size and activated by hydrogen at a flow rate of 300 vol H 2 /volume

  12. Chemical analysis of Al2O3-MgO-C refractories

    International Nuclear Information System (INIS)

    Ortega, P.; Velasco, M. J.; Munoz, V.; Tomba Martinez, A. G.; Pena, P.

    2012-01-01

    The Al 2 O 3 -MgO-C refractories, of great technological interest for its excellent properties, are used in a wide range of furnace lining applications such as iron and steel. These materials are composed of various grades of alumina, magnesia, graphite and metallic additives, which are added to a resin that acts as binder. The variety of components oxides, metals and polymers makes the study of these refractories a complex task. Considering this diversity to characterize these materials has been used several techniques: X-ray fluorescence, plasma emission spectroscopy and gravimetry, complemented by X-ray diffraction, differential thermal analysis and thermogravimetry and reflected light optical microscopy. This paper provides a methodology for chemical and mineralogical characterization of these refractory materials. The results of chemical analysis together with the qualitative information on the crystalline phases and the raw materials with which they are formulated have been used to quantify the composition of the refractories using rational analysis. The data obtained by the different techniques validate the methodology developed. (Author) 23 refs.

  13. Stability of TiO2 and Al2O3 Nanofluids

    Science.gov (United States)

    Wang, Xian-Ju; Li, Hai; Li, Xin-Fang; Wang, Zhou-Fei; Lin, Fang

    2011-08-01

    Aiming at the dispersion stability of nanofluids, we investigate the absorbency and the zeta potential of TiO2 and Al2O3 nanofluids under different pH values and different dispersant concentrations. The results show that in the mass fraction 0.05% alumina and 0.01% titanium dioxide nanosuspensions, the absolute value of the zeta potential and the absorbency of the two nanofluids with sodium dodecyl sulfate (SDS) dispersant are the highest at an optimal pH (pHAl2O3 ≈ 6.0, pHTiO2 ≈ 9.5) and that there is a good correlation between absorbency and zeta potential: the higher the absolute value of the zeta potential is, the greater the absorbency is, and the better the stability of the system is. The optimizing concentrations for SDS are 0.10% and 0.14%, respectively, at which the two nanofluids have the best dispersion results. The calculated DLVO interparticle interaction potentials verify the experimental results of the pH effect on the stability behavior.

  14. Electronic structure of α-Al2O3 slabs: A local environment study

    International Nuclear Information System (INIS)

    Darriba, Germán N.; Faccio, Ricardo; Rentería, Mario

    2012-01-01

    In this work we performed an ab initio/Density Functional Theory (DFT) study of structural and electronic properties of the (0 0 1) α-Al 2 O 3 surface. For this study we used two methods with different basis set: the Full-Potential Augmented Plane Wave plus local orbital (FP-APW+lo) and a linear combination of numerical localized atomic orbital basis sets, employing the WIEN2k code and the SIESTA code, respectively. In order to calculate the structural and electronic properties of the reconstructed surface, we calculated the final equilibrium atomic position with the SIESTA code and then the electric-field gradient (EFG) at Al sites was calculated with the FP-APW+lo code using the optimized positions. Using this procedure we found equilibrium structures with comparative lower energy than those obtained using only the FP-APW+lo method. The EFG tensor and the local structure for Al were studied as a function of the depth from the surface for the relaxed structures. We found that distances down to 6 Å from the surface are sufficient to converge the EFG and the Al-O distances to bulk values. The predicted bulk EFG at the Al site is in good agreement with available experimental values. These results can be used for local probes purposes, e.g., in the case of doping, with important sensitivity for probes located close to the top of the surface, in particular for distances smaller than 6 Å.

  15. A study of electron momentum density distribution in Al2O3 ceramic

    Science.gov (United States)

    Vyas, V.; Kumar, R.; Mishra, M. C.; Sharma, G.; Sharma, B. K.

    2011-08-01

    A study of electron momentum density distribution in α-Al2O3 ceramic using Compton spectroscopy is presented in this work. Measurements have been carried out using 59.54 keV gamma-rays emanating from an Am241 source. Calculations have been performed on the basis of the ab-initio linear combination of atomic orbitals (LCAO) method embodied in the CRYSTAL code. The correlation scheme proposed by Perdew-Burke-Ernzerhof was adopted. The exchange was treated following the Becke scheme. The Hartree-Fock and hybrid schemes were also applied to the compound. All the schemes yielded results that are in good agreement with the measurements. The agreement with experiment is, however, better with the hybrid B3LYP (Lee-Yang-Parr) scheme. Ionic model calculations for a number of configurations of (Al+x)2(O-2x/3)3 (2.75<=x<=3 in steps of 0.125) were also performed utilizing free atom profiles. The ionic model suggests transfer of 2.875 electrons from the valence sp state of Al to the p state of O.

  16. A high resolution, high efficiency neutron powder diffractometer: test refinement of Al2O3

    International Nuclear Information System (INIS)

    Hewat, A.W.; Bailey, I.

    1975-01-01

    Modifications to the ILL high-resolution powder diffractometer D1A will improve its efficiency by an order of magnitude. Novel features include a monochromator take-off angle of 122deg giving high resolution at high angles, a bank of eight 20 x 100 mm high efficiency mylar collimators with He 3 counters, and the possibility of working at high pressures (up to 45 kbar), or low and very high temperatures (1.5K to 2800K). The performance expected of the instrument is illustrated by the refinement of data collected on a standard Al 2 O 3 sample supplied by the Neutron Diffraction Commission. Anisotropic vibrational amplitudes as well as atomic co-ordinates have been determined quite precisely. When completed, D1A will be unique for the precise measurement of moderately complex crystal structures under 'difficult' conditions, especially for the study of phase transitions. But in fact, it is only an indication of a type of more powerful machine described recently in Nuclear Instruments and Methods which could be built on a beam tube of a high-flux reactor

  17. The thermodynamic properties of hydrated γ-Al2O3 nanoparticles

    Science.gov (United States)

    Spencer, Elinor C.; Huang, Baiyu; Parker, Stewart F.; Kolesnikov, Alexander I.; Ross, Nancy L.; Woodfield, Brian F.

    2013-12-01

    In this paper we report a combined calorimetric and inelastic neutron scattering (INS) study of hydrated γ-Al2O3 (γ-alumina) nanoparticles. These complementary techniques have enabled a comprehensive evaluation of the thermodynamic properties of this technological and industrially important metal oxide to be achieved. The isobaric heat capacity (Cp) data presented herein provide further critical insights into the much-debated chemical composition of γ-alumina nanoparticles. Furthermore, the isochoric heat capacity (Cv) of the surface water, which is so essential to the stability of all metal-oxides at the nanoscale, has been extracted from the high-resolution INS data and differs significantly from that of ice-Ih due to the dominating influence of strong surface-water interactions. This study also encompassed the analysis of four γ-alumina samples with differing pore diameters [4.5 (1), 13.8 (2), 17.9 (3), and 27.2 nm (4)], and the results obtained allow us to unambiguously conclude that the water content and pore size have no influence on the thermodynamic behaviour of hydrated γ-alumina nanoparticles.

  18. Role of carbon and electronic structure effects in Al2O3:C OSL phosphor

    International Nuclear Information System (INIS)

    Salunke, H.G.; Muthe, K.P.; Kulkarni, M.S.; Bhatt, B.C.

    2014-01-01

    Alumina has been investigated for thermoluminescent (TL) properties since the 1950s along with a large number of materials which were tested for dosimetric applications. Some natural alumina crystals were found to be more favourable than LiF for luminescence dosimetry applications. However later Alumina was abandoned in favour of other more promising materials. However in 1990s it was observed that TL and optically stimulated luminescence (OSL) in carbon doped Al 2 O 3 enhances its use as dosimetric material increasing its applicability immensely. It was further observed that the performance of carbon doped alumina improved and remained linear over a large range of exposure to radiation. Also radiation trapped in the material remained localized and did not dissipate with time. This possibly could arise due to electronic states which are localised and with no hybridisation with other extended states of the host matrix. Furthermore the vibrations of the impurity atoms or vacancies also do not have any interaction with the host matrix resulting in absence of dissipation of stored energy form the localised states. The radiation induced defects responsible for OSL have been characterized. The aim of the present work is to theoretically investigate the role of carbon doping in enhancing defects in the material and also understand the origin of trap and recombination states in the material

  19. Improving the cooling performance of automobile radiator with Al2O3/water nanofluid

    International Nuclear Information System (INIS)

    Peyghambarzadeh, S.M.; Hashemabadi, S.H.; Jamnani, M. Seifi; Hoseini, S.M.

    2011-01-01

    In this paper, forced convective heat transfer in a water based nanofluid has experimentally been compared to that of pure water in an automobile radiator. Five different concentrations of nanofluids in the range of 0.1-1 vol.% have been prepared by the addition of Al 2 O 3 nanoparticles into the water. The test liquid flows through the radiator consisted of 34 vertical tubes with elliptical cross section and air makes a cross flow inside the tube bank with constant speed. Liquid flow rate has been changed in the range of 2-5 l/min to have the fully turbulent regime (9 x 10 3 4 ). Additionally, the effect of fluid inlet temperature to the radiator on heat transfer coefficient has also been analyzed by varying the temperature in the range of 37-49 o C. Results demonstrate that increasing the fluid circulating rate can improve the heat transfer performance while the fluid inlet temperature to the radiator has trivial effects. Meanwhile, application of nanofluid with low concentrations can enhance heat transfer efficiency up to 45% in comparison with pure water. - Highlights: → Application of nanofluid in the car radiator has been studied experimentally. → Heat transfer enhancement of about 45% compared to water has been recorded. → Increasing particle concentration and velocity improves heat transfer performance.

  20. Residual Stress in Brazing of Submicron Al2O3 to WC-Co

    Science.gov (United States)

    Grunder, T.; Piquerez, A.; Bach, M.; Mille, P.

    2016-07-01

    This study evaluated the residual stresses induced by brazing and grinding submicron Al2O3, using different methods. Energy dispersive x-ray spectrometry analysis (EDX) of 72Ag-Cu filler and filler/WC-Co interface showed evidence of atomic diffusion and possible formation of titanium oxide layers between the joint and the bonding materials. An analytical model supported by the finite element method (FEM) based on strain determination due to the difference in variation of thermal expansion was used to assess the stress distribution at the coupling interface and in bulk materials. The model took into account the evolution of the Young's modulus and of the thermal expansion with temperature. The model could be used to follow strain and stress evolutions of the bonded materials during the cooling cycle. The maximum stress rose above -300 MPa at the center of the 100 × 100 × 3 mm ceramic plates. The residual stresses on the external surface of ceramic were investigated by x-ray diffraction (XRD) and indentation fracture method (IFM). After brazing and grinding the plate, the principal stresses were 128.1 and 94.9 MPa, and the shear stress was -20.1 MPa. Microscopic examination revealed grain pull-out promoted by the global residual stresses induced by the brazing and grinding processes. The surface stresses evaluated by the different methods were reasonably correlated.

  1. Production of Al2O3–SiC nano-composites by spark plasma sintering; Producción de nano-composites – SiC–Al2O3 por spark plasma sinterizado

    Energy Technology Data Exchange (ETDEWEB)

    Mansour Razavi; Ali Reza Farajipour; Mohammad Zakeri; Mohammad Reza Rahimipour; Ali Reza Firouzbakht

    2017-11-01

    In this paper, Al2O3–SiC composites were produced by SPS at temperatures of 1600°C for 10min under vacuum atmosphere. For preparing samples, Al2O3 with the second phase including of micro and nano-sized SiC powder were milled for 5h. The milled powders were sintered in a SPS machine. After sintering process, phase studies, densification and mechanical properties of Al2O3–SiC composites were examined. Results showed that the specimens containing micro-sized SiC have an important effect on bulk density, hardness and strength. The highest relative density, hardness and strength were 99.7%, 324.6 HV and 2329MPa, respectively, in Al2O3–20wt% SiCmicro composite. Due to short time sintering, the growth was limited and grains still remained in nano-meter scale. [Spanish] En este trabajo se muestran compuestos de Al2O3-SiC producidos por SPS, en vacío, a 1.600 °C durante 10 min. Para la preparación de muestras, se molieron polvos de Al2O3 durante 5 h con la segunda fase de micro-y-nano polvo de SiC. Posteriormente, estos polvos molidos se sinterizaron mediante SPS. Después del proceso de sinterización, se realizaron estudios de fase, densificación y propiedades mecánicas de los compuestos de Al2O3-SiC obtenidos. Los resultados mostraron que micro-SiC en las muestras tiene un efecto importante en su densidad aparente, dureza y resistencia. La mayor densidad relativa, dureza y resistencia fueron respectivamente del 99,7%, 324,6 HV y 2.329 MPa para Al2O3 con un 20% en peso micro-SiC. Debido al corto tiempo de sinterización, el crecimiento los granos fue limitado y se mantuvieron en escala nanométrica.

  2. Mechanical properties of dental composite materials reinforced with micro and nano-size Al2O3 filler particles

    International Nuclear Information System (INIS)

    Foroutan, F.; Javadpour, J.; Khavandi, A.; Atai, M.

    2011-01-01

    Composite specimens were prepared by dispersion of various amounts of nano-sized Al 2 O 3 fillers in a monomer system containing 60 p ercent B is-GMA and 40 p ercent T EGDMA. For comparative purposes, composite samples containing micrometer size Al 2 O 3 fillers were also prepared following the same procedure. The mechanical properties of the light- cured samples were assessed by three-point flexural strength, diametral tensile strength, and microhardness tests. The results indicated a more than hundred percent increase in the flexural strength and nearly an eighty percent increase in the diametral tensile strength values in the samples containing nano-size Al 2 O 3 filler particles. It is interesting to note that, this improvement was observed at a much lower nano-size filler content. Fracture surfaces analyzed by scanning electron microscopy, indicated a brittle type of fracture in both sets of specimens.

  3. Properties of sintered Al2O3-Cr composites depending on the method of preparation of the powder mixture

    Directory of Open Access Journals (Sweden)

    Chmielewski M.

    2006-01-01

    Full Text Available Continuous progress in modern science and industry depends on the availability of new effective devices and materials. New generation materials should be characterized by a specified combination of properties which sometimes exclude one another. Al2O3-Cr composites belong to this group of materials. This study is concerned with the effect of the method of preparation of the starting powders upon the properties of sintered Al2O3-Cr composites. The composites were produced using powder mixtures with various volumetric shares of the starting powders (from 25 to 75vol.%. The mixtures were prepared by conventional mechanical mixing in a ball-mill or by mechanical alloying in a high-energy mill of the attritor type. It has been found that with mechanically alloyed powders the Al2O3-Cr composites have better bending strength, hardness and frictional wear resistance.

  4. Wear Behavior of AZ31/Al2O3 Magnesium Matrix Surface Nanocomposite Fabricated via Friction Stir Processing

    Science.gov (United States)

    Azizieh, Mahdi; Larki, Arsham Norouzi; Tahmasebi, Mehdi; Bavi, Mehdi; Alizadeh, Ehsan; Kim, Hyoung Seop

    2018-03-01

    The aim of this study was to produce magnesium-based surface nanocomposites via friction stir processing and to investigate the effect of tool rotational speed on the microstructure, hardness and wear behavior. The surface of the nanocomposites was characterized using optical and scanning electron microscopes, as well as through microhardness and wear tests. The results indicated that with the increase in rotational speed, the grain size of the surface nanocomposites increased, but its hardness decreased despite the improved distribution of Al2O3 nanoparticles. It was also found that the wear resistance has a direct relation to the distribution of the Al2O3 nanoparticles. Furthermore, the addition of nano-Al2O3 changed the wear mechanism from the adhesive mode in the as-received AZ31 to the abrasive mode in the nanocomposite specimens. The rotational speed of 1400 rpm was an optimum parameter to achieve a suitable composite layer with the highest wear resistance.

  5. Thiophene hydrodesulfurization over CoMo/Al2O3-CuY catalysts: Temperature effect study

    Directory of Open Access Journals (Sweden)

    Yamina Boukoberine

    2016-09-01

    Full Text Available CoMo/γ-Al2O3-CuY catalysts are prepared by physically mixing CoMo/γ-Al2O3 catalyst with Cu-exchanged Y zeolite. The CuY zeolite is prepared by the solid state ion exchange technique. The thiophene hydrodesulfurization is performed in a fixed bed reactor at high temperature and atmospheric pressure. The results show that the presence of CuY zeolite particles in CoMo/Al2O3 catalyst can have a noticeable effect on both the conversion and product selectivities. An increasing zeolite loading in catalyst results in a decrease of the thiophene HDS activity. This decrease is probably caused by the formation of heavy compounds and the deactivation of the zeolite at high temperatures.

  6. Green synthesis of nanocrystalline α-Al2O3 powders by both wet-chemical and mechanochemical methods

    Science.gov (United States)

    Gao, Huiying; Li, Zhiyong; Zhao, Peng

    2018-03-01

    Nanosized α-Al2O3 powders were prepared with AlCl3ṡ6H2O and NH4HCO3 as raw materials by both wet-chemical and mechanochemical methods, through the synthesis of the ammonium aluminum carbonate hydroxide (AACH) precursor followed by calcination. The environmentally benign starch was used as an effective dispersant during the preparation of nanocrystalline α-Al2O3 powders. X-ray diffraction (XRD), thermogravimetric differential thermal analysis (TG-DTA), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) were employed to characterize the precursor AACH and products. The results show that nanosized spherical α-Al2O3 powders without hard agglomeration and with particle size in the range of 20-40 nm can be obtained by the two methods. Comparing the two “green” processes, the mechanochemical method has better prospects for commercial production.

  7. Influence of the stem effect on radioluminescence signals from optical fibre Al2O3:C dosemeters

    DEFF Research Database (Denmark)

    Marckmann, C.J.; Aznar, M.C.; Andersen, C.E.

    2006-01-01

    This paper analyses the influence of the Cerenkov radiation and other noise sources, the so-called stem effect, on radioluminescence (RL) signals generated in optical fibre Al2O3:C dosemeters used in medical dosimetry. The optical fibre dosemeter consists of a sensitive Al2O3:C crystal coupled...... to an optical fibre cable that carries the RL and optically stimulated luminescence (OSL) signals generated in the Al2O3:C crystal. During irradiation of the dosemeter, the real-time dose rate can be determined from the RL signal and after irradiation the total dose absorbed is determined from the OSL signal...... stimulated using a focused green solid-state laser. In particular, the components of the stem effect generated in the fibres were analysed to determine their impact on the RL signal....

  8. Diffusion barriers of Al2O3 to reduce the bondcoat-oxidation of MCrAlY alloys

    International Nuclear Information System (INIS)

    Schmitt-Thomas, K.G.; Dietl, U.

    1992-01-01

    Under operating conditions in gas turbines plasma sprayed MCrAlY bondcoats (M = Co and/or Ni) for thermal barrier coatings are exposed to a strong oxidation attack. One possibility to reduce bondcoat oxidation is the application of diffusion barriers. Onto the bondcoat, diffusion barriers of Al 2 O 3 are deposited by CVD, PVD and plasma pulse process. The oxidation behaviour of these coating systems were examined at a temperature of 1273 K for times up to 250 hours. The CVD and PVD Al 2 O 3 - coated specimens show compared to the uncoated specimens smaller oxidation rates. The porous Al 2 O 3 coatings, produced by plasma pulse process are not fit for oxidation protection of the bondcoat. There is hope for further improvement of the oxidation resistance by optimizing the CVD- and PVD-process parameters. (orig.) [de

  9. Ethanol gas sensing properties of Al2 O3 -doped ZnO thick film ...

    Indian Academy of Sciences (India)

    WINTEC

    Centre for Materials for Electronics Technology, Pune 411 008, India. MS received 13 July 2007. Abstract. ... Heavy exposure and/or consumption of alcoholic beve- rages, particularly by smokers, increase the risk of cancer ..... ZnO could be attributed to the charge-carrier generation mechanism resulting from the electronic ...

  10. High Performance Infrared Plasmonic Metamaterial Absorbers and Their Applications to Thin-film Sensing

    KAUST Repository

    Yue, Weisheng

    2016-04-07

    Plasmonic metamaterial absorbers (PMAs) have attracted considerable attention for developing various sensing devices. In this work, we design, fabricate and characterize PMAs of different geometrical shapes operating in mid-infrared frequencies, and explore the applications of the PMAs as sensor for thin films. The PMAs, consisting of metal-insulator-metal stacks with patterned gold nanostructured surfaces (resonators), demonstrated high absorption efficiency (87 to 98 %) of electromagnetic waves in the infrared regime. The position and efficiency of resonance absorption are dependent on the shape of the resonators. Furthermore, the resonance wavelength of PMAs was sensitive to the thin film coated on the surface of the PMAs, which was tested using aluminum oxide (Al2O3) as the film. With increase of the Al2O3 thickness, the position of resonance absorption shifted to longer wavelengths. The dependence of the resonant wavelength on thin film thickness makes PMAs a suitable candidate as a sensor for thin films. Using this sensing strategy, PMAs have potential as a new method for thin film detection and in situ monitoring of surface reactions. © 2016 Springer Science+Business Media New York

  11. Antibacterial potential of Al2O3 nanoparticles against multidrug resistance strains of Staphylococcusaureus isolated from skin exudates

    International Nuclear Information System (INIS)

    Ansari, Mohammad Azam; Khan, Haris M.; Khan, Aijaz A.; Pal, Ruchita; Cameotra, Swaranjit Singh

    2013-01-01

    To date very little studies are available in the literature on the interaction of Al 2 O 3 nanoparticles with multidrug-resistant strains of Staphylococcusaureus. Considering the paucity of earlier reports the objective of present study was to investigate the antibacterial activity of Al 2 O 3 NPs ( 2 O 3 NPs were characterized by scanning electron microscopy, high-resolution transmission electron microscopy, and X-ray diffraction. The MIC was found to be in the range of 1,700–3,400 μg/ml. Almost no growth was observed at 2,000 μg/ml for up to 10 h. SEM micrograph revealed that the treated cells were significantly damaged, showed indentation on cell surface and clusters of NPs on bacterial cell wall. HR-TEM micrograph shows disruption and disorganization of cell membrane and cell wall. The cell membrane was extensively damaged and, most probably, the intracellular content has leaked out. Al 2 O 3 NPs not only adhered at the surface of cell membrane, but also penetrated inside the bacterial cells, cause formation of irregular-shaped pits and perforation on their surfaces and may also interact with the cellular macromolecules causing adverse effect including cell death. The data presented here are novel in that Al 2 O 3 NPs are effective bactericidal agents regardless of the drug resistance mechanisms that confer importance to these bacteria as an emergent pathogen. Therefore, in depth studies regarding the interaction of Al 2 O 3 NPs with cells, tissues, and organs as well as the optimum dose required to produce therapeutic effects need to be ascertained before we can expect a more meaningful role of the Al 2 O 3 NPs in medical application

  12. Preparation and microwave-infrared absorption of reduced graphene oxide/Cu–Ni ferrite/Al2O3 composites

    Science.gov (United States)

    De-yue, Ma; Xiao-xia, Li; Yu-xiang, Guo; Yu-run, Zeng

    2018-01-01

    Reduced graphene oxide (RGO)/Cu–Ni ferrite/Al2O3 composite was prepared by solvothermal method, and its properties were characterized by SEM, x-ray diffraction, energy-dispersive x-ray spectroscopy and FTIR. The electromagnetic parameters in 2–18 GHz and mid-infrared (IR) spectral transmittance of the composite were measured, respectively. The results show that Cu0.7Ni0.3Fe2O4 nanoparticles with an average size of tens nanometers adsorb on surface of RGO, and meanwhile, Al2O3 nanoparticles adhere to the surface of Cu0.7Ni0.3Fe2O4 nanoparticles and RGO. The composite has both dielectric and magnetic loss mechanism. Its reflection loss is lower than ‑19 dB in 2–18 GHz, and the maximum of ‑23.2 dB occurs at 15.6 GHz. With the increasing of Al2O3 amount, its reflection loss becomes lower and the maximum moves towards low frequency slightly. Compared with RGO/Cu–Ni ferrite composites, its magnetic loss and reflection loss slightly reduce with the increasing of Al2O3 amount, and the maximum of reflection loss shifts from a low frequency to a high one. However, its broadband IR absorption is significantly enhanced owing to nano-Al2O3. Therefore, RGO/Cu–Ni ferrite/Al2O3 composites can be used as excellent broadband microwave and IR absorbing materials, and maybe have broad application prospect in electromagnetic shielding, IR absorbing and coating materials.

  13. Lipid bilayer coated Al(2)O(3) nanopore sensors: towards a hybrid biological solid-state nanopore.

    Science.gov (United States)

    Venkatesan, Bala Murali; Polans, James; Comer, Jeffrey; Sridhar, Supriya; Wendell, David; Aksimentiev, Aleksei; Bashir, Rashid

    2011-08-01

    Solid-state nanopore sensors are highly versatile platforms for the rapid, label-free electrical detection and analysis of single molecules, applicable to next generation DNA sequencing. The versatility of this technology allows for both large scale device integration and interfacing with biological systems. Here we report on the development of a hybrid biological solid-state nanopore platform that incorporates a highly mobile lipid bilayer on a single solid-state Al(2)O(3) nanopore sensor, for the potential reconstitution of ion channels and biological nanopores. Such a system seeks to combine the superior electrical, thermal, and mechanical stability of Al(2)O(3) solid-state nanopores with the chemical specificity of biological nanopores. Bilayers on Al(2)O(3) exhibit higher diffusivity than those formed on TiO(2) and SiO(2) substrates, attributed to the presence of a thick hydration layer on Al(2)O(3), a key requirement to preserving the biological functionality of reconstituted membrane proteins. Molecular dynamics simulations demonstrate that the electrostatic repulsion between the dipole of the DOPC headgroup and the positively charged Al(2)O(3) surface may be responsible for the enhanced thickness of this hydration layer. Lipid bilayer coated Al(2)O(3) nanopore sensors exhibit excellent electrical properties and enhanced mechanical stability (GΩ seals for over 50 h), making this technology ideal for use in ion channel electrophysiology, the screening of ion channel active drugs and future integration with biological nanopores such as α-hemolysin and MspA for rapid single molecule DNA sequencing. This technology can find broad application in bio-nanotechnology.

  14. Characterization of microstructure and mechanical properties of friction stir welded AlMg5- Al2O3 nanocomposites