WorldWideScience

Sample records for al-doped zno thin

  1. Pulsed laser deposited Al-doped ZnO thin films for optical applications

    OpenAIRE

    Gurpreet Kaur; Anirban Mitra; K.L. Yadav

    2015-01-01

    Highly transparent and conducting Al-doped ZnO (Al:ZnO) thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002) oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal...

  2. Pulsed laser deposited Al-doped ZnO thin films for optical applications

    Directory of Open Access Journals (Sweden)

    Gurpreet Kaur

    2015-02-01

    Full Text Available Highly transparent and conducting Al-doped ZnO (Al:ZnO thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002 oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV was found to be less than pure ZnO (3.37 eV films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs applications. The current–voltage (I–V measurements show the ohmic behavior of the films with resistivity (ρ~10−3 Ω cm.

  3. Ultraviolet Sensing by Al-doped ZnO Thin Films

    International Nuclear Information System (INIS)

    We report the fabrication and characterization of an ultraviolet photoconductive sensing by using Al-doped ZnO films. Undoped ZnO, 1 at.% and 2 at% of Al were prepared on quartz glass by sol gel method with annealing temperature of 500 degree Celsius for 1 hour. The presence of spherical shaped nanoparticles were detected for undoped ZnO by using FESEM. The absorption edge shifted to a lower wavelength by doping with Al and excitonic peak can be observed. The band gap values increased by adding Al. I-V curves reveal an improvement in electrical properties when the samples are illuminated by ultraviolet (UV) light with a wavelength of 365 nm. At 1 at.% of Al, the film have a larger increment in photocurrent response when illuminated with UV light compared to undoped ZnO and 2 at.% Al. The thin films have a longer recovery time than response time. (author)

  4. Laser induced photoconductivity in sol–gel derived Al doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Eskandari, F.; Ranjbar, M., E-mail: ranjbar@cc.iut.ac.ir; Kameli, P.; Salamati, H.

    2015-11-15

    In this paper Al doped ZnO (AZO) thin films with 0, 3, 6 and 12 at. % Al concentration were prepared by sol–gel method on glass substrates. The deposited films were annealed at different temperatures of 300, 350, 400, 450 and 500 °C for 1 h in air. X-ray diffraction (XRD) showed wurtzite crystalline structure for the films annealed above 400 °C. The films were subsequently irradiated by beams of excimer (KrF, λ = 248 nm) laser. The evolution of crystal structure, surface morphology and optical properties were studied using XRD, filed emission scanning electron microscope (FE-SEM) and UV–Vis spectrophotometer, respectively. Real-time measurement of electrical conductivity during laser irradiation showed a transient or persistent photoconductivity effect. The effect of laser energy on this photoconductivity was also investigated. Based on the observed photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), the observed photoconductivity effect was described. - Highlights: • AZO (0–12 at. % Al) films were prepared by sol–gel method and annealed at different temperatures. • Excimer laser (λ = 248 nm) irradiation leads to improvement of crystalline structure. • Average optical transmission doesn't change and optical gap decreases by irradiation. • Photoconductivity was investigated by real-time measurement of electrical resistance. • Sample of 6% Al annealed at 450–500 °C showed the best photoconductivity effect.

  5. Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    LI Li; FANG Liang; CHEN Ximing; LIU Gaobin; LIU Jun; YANG Fengfan; FU Guangzong; KONG Chunyang

    2007-01-01

    Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containing Al (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400 ℃, respectively) were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.

  6. Amorphous-nanocrystalline Al doped ZnO transparent conducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Diez-Betriu, X., E-mail: xdiezbetriu@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco 28049 Madrid (Spain); Jimenez-Rioboo, R.; Marcos, J. Sanchez-; Cespedes, E.; Espinosa, A.; Andres, A. de [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco 28049 Madrid (Spain)

    2012-09-25

    Highlights: Black-Right-Pointing-Pointer Al- doped ZnO films by RF- sputtering as amorphous TCO. Black-Right-Pointing-Pointer Structural characterization confirms amorphous-nanocrystalline nature of samples. Black-Right-Pointing-Pointer Optical gap dependence on substrate and grain size. Black-Right-Pointing-Pointer Resistivity correlates to the optical bandgap. - Abstract: Al-doped ZnO films have been deposited at room temperature by means of RF sputtering under different conditions and subjected to annealing treatments looking for amorphous Transparent Conducting Oxide (TCO) films in the search for their integration into the emerging area of the flexible electronics. Structural studies have been performed as well as optical and electrical characterization. Spectroscopic ellipsometry has been used for the determination of the optical gap for films grown on Si and the films thickness. The amorphous fraction of the films (up to 86%) depends on the substrate and RF power but not on the annealing temperature up to 600 Degree-Sign C for glass substrates. The resistivity is found to be independent of the amorphous degree and correlates to the optical bandgap which presents three regimes depending on the annealing temperature.

  7. Structures and properties of the Al-doped ZnO thin films prepared by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Al-doped ZnO thin films were deposited by radio frequency magnetron sputtering using a ZnO target with 2 wt.% Al2O3. The structures and properties of the films were characterized by the thin film X-ray diffraction, high resolution transmission electron microscopy, Hall system and ultraviolet/visible/near-infrared spectrophotometer. The Al-doped ZnO film with high crystalline quality and good properties was obtained at the sputtering power of 100 W, working pressure of 0.3 Pa and substrate temperature of 250 deg. C. The results of further structure analysis show that the interplanar spacings d are enlarged in other directions besides the direction perpendicular to the substrate. Apart from the film stress, the doping concentration and the doping site of Al play an important role in the variation of lattice parameters. When the doping concentration of Al is more than 1.5 wt.%, part of Al atoms are incorporated in the interstitial site, which leads to the increase of lattice parameters. This viewpoint is also proved by the first principle calculations.

  8. Al-doped ZnO Nanostructured Thin Films: Density Functional Theory and Experiment

    Science.gov (United States)

    Sarma, J. V. N.; Rahman, A.; Jayaganthan, R.; Chowdhury, Rajib; Haranath, D.

    2015-06-01

    Nanostructured Al-doped ZnO (AZO) films are deposited on glass substrates by electroless deposition technique in the present work. AZO films with Al concentration from 1 at.% to 5 at.% are investigated for their structural and morphological properties by X-ray diffraction (XRD), and atomic force microscopy (AFM). An excellent homogeneity is achieved with average crystallite sizes of below 32 nm and a nearly constant root mean square (RMS) surface roughness between 1 nm and 3 nm, for various Al doping concentrations. These smooth and uniform films are characterized for their optical and photoluminescence (PL) properties. A higher value of average transparency between 79% and 92% in the wavelength range of 300-800 nm is achieved, and the PL intensity is found to be a strong function of doping. Density functional theory (DFT) calculations agree with the measured transmittance values, in addition to their predicted electronic structure. Moreover, time-resolved PL measurements indicate that the luminescence decay time decreases with increased doping concentration.

  9. Chemical and electronic interface structure of spray pyrolysis deposited undoped and Al-doped ZnO thin films on a commercial Cz-Si solar cell substrate

    Energy Technology Data Exchange (ETDEWEB)

    Gabas, M.; Ramos-Barrado, J.R. [Dpto. de Fisica Aplicada I, Lab. de Materiales y Superficies, Universidad de Malaga 29071 Malaga (Spain); Barrett, N.T. [CEA DSM/IRAMIS/SPCSI, CEA Saclay, 91191 Gif sur Yvette (France); Gota, S. [Laboratoire Leon Brillouin, UMR 012 CEA-CNRS CEA Saclay, 91191 Gif sur Yvette (France); Rojas, T.C. [Instituto de Ciencia de Materiales de Sevilla, CSIC, Americo Vespucio 49, 41092 Sevilla (Spain); Lopez-Escalante, M.C. [Isofoton S.A., Parque Tecnologico de Andalucia, Severo Ochoa, 50, 29590 Malaga (Spain)

    2009-08-15

    We have studied differences in the interface between undoped and Al-doped ZnO thin films deposited on commercial Si solar cell substrates. The undoped ZnO film is significantly thicker than the Al-doped film for the same deposition time. An extended silicate-like interface is present in both samples. Transmission electron microscopy (TEM) and photoelectron spectroscopy (PES) probe the presence of a zinc silicate and several Si oxides in both cases. Although Al doping improves the conductivity of ZnO, we present evidence for Al segregation at the interface during deposition on the Si substrate and suggest the presence of considerable fixed charge near the oxidized Si interface layer. The induced distortion in the valence band, compared to that of undoped ZnO, could be responsible for considerable reduction in the solar cell performance. (author)

  10. Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

    Science.gov (United States)

    Zhai, Chen-Hui; Zhang, Rong-Jun; Chen, Xin; Zheng, Yu-Xiang; Wang, Song-You; Liu, Juan; Dai, Ning; Chen, Liang-Yao

    2016-09-01

    The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.

  11. Al doped ZnO thin films - microstructure, physical and sensor properties

    Science.gov (United States)

    Starbov, N.; Balabanov, S.; Bineva, I.; Rachkova, A.; Krumov, E.; Starbova, K.

    2012-12-01

    Thin ZnO films doped with Al are deposited by spray pyrolysis onto glass substrates using starting solution of Zn-acetate + n.AlCl (where 0.1 detection of noxious gases is checked via resistivity measurements under saturated vapours of ethanol, acetone, ammonia, dimethylamine and formalin at room temperature. Finally the results obtained are discussed concerning the application of the ZnO:Al films studied in the field of sensor technique.

  12. Improving the uncommon (110) growing orientation of Al-doped ZnO thin films through sequential pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Coman, Tudor [Faculty of Physics, “Al. I. Cuza” University, 11 Carol I Blvd., Iasi 700506 (Romania); Ursu, Elena Laura [Centre of Advanced Research in Bionanoconjugates and Biopolymers, “Petru Poni” Institute of Macromolecular Chemistry, 41 A Grigore Ghica Voda Alley, Iasi 700487 (Romania); Nica, Valentin; Tiron, Vasile [Faculty of Physics, “Al. I. Cuza” University, 11 Carol I Blvd., Iasi 700506 (Romania); Olaru, Mihaela; Cotofana, Corneliu [Polymer Materials Physics Laboratory, “Petru Poni” Institute of Macromolecular Chemistry, 41 A Gr. Ghica Voda Alley, Iasi 700487 (Romania); Dobromir, Marius [Faculty of Physics, “Al. I. Cuza” University, 11 Carol I Blvd., Iasi 700506 (Romania); Coroaba, Adina [Centre of Advanced Research in Bionanoconjugates and Biopolymers, “Petru Poni” Institute of Macromolecular Chemistry, 41 A Grigore Ghica Voda Alley, Iasi 700487 (Romania); Dragos, Oana-Georgiana; Lupu, Nicoleta [National Institute of Research and Development for Technical Physics, 47 Mangeron Blvd., Iasi 700050 (Romania); Caltun, Ovidiu Florin [Faculty of Physics, “Al. I. Cuza” University, 11 Carol I Blvd., Iasi 700506 (Romania); Ursu, Cristian, E-mail: cristian.ursu@icmpp.ro [Polymer Materials Physics Laboratory, “Petru Poni” Institute of Macromolecular Chemistry, 41 A Gr. Ghica Voda Alley, Iasi 700487 (Romania)

    2014-11-28

    High quality Al-doped ZnO (AZO) films with uncommon (110) orientation are obtained on amorphous substrate by using Sequential Pulsed Laser Deposition technique. The dependence of the structural, optical and electrical properties with dopant concentration and oxygen deposition pressure was investigated systematically. We note a transition from the (002) preferential orientation of crystallites to an uncommon (110) orientation due to a combined effect of doping concentration and deposition pressure decreasing. For constant deposition pressure of 5 Pa the film crystallinity is changed from preferential (002) to polycrystalline when increasing dopant concentration. For the maximum dopant concentration that we have investigated (i.e., 4.4% at.) structural properties of AZO films are changed from a polycrystalline phase to a (110) preferential orientation when the deposition pressure decreases. This uncommon growth mode is accompanied by a change of the morphology from a densely packed granular structure to a more rarefied one. Moreover, the band gap widens up to 3.88 eV and the electrical resistivity drops to 5.4 × 10{sup −2} Ω cm. The structural changes were attributed to two mechanisms: a first one, responsible for the (002) phase suppression as a consequence of aluminum ion bombardment during the doping process and, a second one, in charge with (110) phase growth as the diffusion rates of zinc and oxygen atoms are affected by the dopant incorporation and by the decrease of deposition pressure. - Highlights: • Sequential PLD (SPLD) of (110) Al-doped ZnO thin films on amorphous substrate • Highly c-axis oriented films with high transparency and low resistivity • Fine tuning of the dopant concentration through SPLD method.

  13. Improving the uncommon (110) growing orientation of Al-doped ZnO thin films through sequential pulsed laser deposition

    International Nuclear Information System (INIS)

    High quality Al-doped ZnO (AZO) films with uncommon (110) orientation are obtained on amorphous substrate by using Sequential Pulsed Laser Deposition technique. The dependence of the structural, optical and electrical properties with dopant concentration and oxygen deposition pressure was investigated systematically. We note a transition from the (002) preferential orientation of crystallites to an uncommon (110) orientation due to a combined effect of doping concentration and deposition pressure decreasing. For constant deposition pressure of 5 Pa the film crystallinity is changed from preferential (002) to polycrystalline when increasing dopant concentration. For the maximum dopant concentration that we have investigated (i.e., 4.4% at.) structural properties of AZO films are changed from a polycrystalline phase to a (110) preferential orientation when the deposition pressure decreases. This uncommon growth mode is accompanied by a change of the morphology from a densely packed granular structure to a more rarefied one. Moreover, the band gap widens up to 3.88 eV and the electrical resistivity drops to 5.4 × 10−2 Ω cm. The structural changes were attributed to two mechanisms: a first one, responsible for the (002) phase suppression as a consequence of aluminum ion bombardment during the doping process and, a second one, in charge with (110) phase growth as the diffusion rates of zinc and oxygen atoms are affected by the dopant incorporation and by the decrease of deposition pressure. - Highlights: • Sequential PLD (SPLD) of (110) Al-doped ZnO thin films on amorphous substrate • Highly c-axis oriented films with high transparency and low resistivity • Fine tuning of the dopant concentration through SPLD method

  14. Effect of Al Doping on Structural, Electrical, Optical and Photoluminescence Properties of Nano-Structural ZnO Thin Films

    Institute of Scientific and Technical Information of China (English)

    M. Mozibur Rahman; M.K.R. Khan; M. Rafiqul Islam; M.A. Halim; M. Shahjahan; M.A. Hakim; Dilip Kumar Saha; Jasim Uddin Khan

    2012-01-01

    The nano-structural Al-doped ZnO thin films of different morphologies deposited on glass substrate were successfully fabricated at substrate temperature of 350 ℃ by an inexpensive spray pyrolysis method. The structural, electrical, optical and photoluminescence properties were investigated. X-ray diffraction study revealed the crystalline wurtzite (hexagonal) structure of the films with nano-grains. Scanning electron microscopy (SEM) micrographs indicated the formation of a large variety of nano-structures during film growth. The spectral absorption of the films occurred at the absorption edge of -410 nm. In the present study, the optical band gap energy 3.28 eV of ZnO decreased gradually to 3.05 eV for 4 mol% of AI doping. The deep level activation energy decreased and carrier concentrations increased substantially with increasing doping. Exciting with the energy 3.543 eV (A=350 nm), a narrow and a broad characteristic photoluminescence peaks that correspond to the near band edge (NBE) and deep level emissions (DLE), respectively emerged.

  15. Transparent conductive Al-doped ZnO thin films grown at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yuping; Lu Jianguo; Bie Xun; Gong Li; Li Xiang; Song Da; Zhao Xuyang; Ye Wenyi; Ye Zhizhen [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2011-05-15

    Aluminum-doped ZnO (ZnO:Al, AZO) thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn-Al alloy target at room temperature. The effects of the Ar-to-O{sub 2} partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O{sub 2} ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10{sup -3} {Omega} cm resistivity, greater than 10{sup 20} cm{sup -3} electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11x10{sup -3} {Omega} cm was obtained under the Ar-to-O{sub 2} partial pressure ratio of 100:4. A relatively strong UV emission at {approx}3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.

  16. Fabrication of high infrared reflective Al-doped ZnO thin films through electropulsing treatment for solar control

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Dagang, E-mail: chinesemdg@163.com; Hu, Huawen; Gan, Lu

    2015-08-05

    Highlights: • Rapid electropulsing treatment (EPT) was applied on AZO thin films. • AZO film presented electrical resistivity of 9.03 × 10{sup −4} Ω cm after 4.5 min of EPT. • AZO film presented high infrared reflection rate of 80–85% after 4.5 min of EPT. • The prepared AZO film can be used as solar control film. - Abstract: In this study, Al-doped ZnO (AZO) thin films were finished by low-energy consumed electropulsing treatment (EPT) in a short time. The EPT effect on the resulting AZO films was investigated by X-ray Diffraction (XRD), Hall Effect measurement, UV–visible transmittance spectra, Scanning Electron Microscope (SEM), Atomic Force Microscopy (AFM) and Fourier Transform Infrared Spectroscopy. As compared with the other EPT-treated AZO films, the prepared AZO films corresponding to 4.5 min EPT exhibited higher degree of crystallization, higher visible transmittance with blue shift, smoother surface, lower electrical resistivity of 9.03 × 10{sup −4} Ω cm, and higher infrared reflection rate of 80–85%. By the 4.5 min of EPT, the electrical conductivity of the resulting AZO thin film was increased by approximately 82.3%. Moreover, it was also found that prolonged EPT would degrade the film properties. These results indicate that the fast and low-energy consumed EPT might be a promising substitution for traditional heat annealing, and the prepared high infrared reflective AZO films make them promising candidates for being applied as solar control films.

  17. Effects of Al Concentration on Structural and Optical Properties of Al-doped ZnO Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Su; Yim, Kwang Gug; Leem, Jae Young [Inje University, Gimhae (Korea, Republic of); Son, Jeong Sik [Kyungwoon University, Gumi (Korea, Republic of)

    2012-04-15

    Aluminium (Al)-doped zinc oxide (AZO) thin films with different Al concentrations were prepared by the solgel spin-coating method. Optical parameters such as the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity were studied in order to investigate the effects of the Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at infinite wavelength of the AZO thin films were found to be affected by Al incorporation. The optical conductivity of the AZO thin films also increases with increasing photon energy

  18. Investigation of the biaxial stress of Al-doped ZnO thin films on a flexible substrate with RF magnetron sputtering

    Science.gov (United States)

    Huang, Kuo-Ting; Chen, Hsi-Chao; Cheng, Po-Wei; Chang, Jhe-Ming

    2016-01-01

    Transparent conductive Al-doped ZnO (AZO) thin films were deposited onto poly(ethylene terephthalate) (PET) substrate, using the radio frequency (RF) magnetron sputtering method. The residual stress of flexible electronics was investigated by a double beam shadow moiré interferometer with phase shifting interferometry (PSI). Moreover, the biaxial stress of AZO thin films can be graphically represented by using Mohr’s circle of stress. The residual stress of AZO thin films becomes more compressive with the increase in sputtering power. The maximum residual stress is -1115.74 MPa, and the shearing stress is 490.57 MPa at a sputtering power of 200 W. The trends of residual stress were evidenced by the X-ray diffraction (XRD) patterns and optical properties of AZO thin films. According to the evaluation results of the refractive index and the extinction coefficient, the AZO thin films have better quality when the sputtering power less than 100 W.

  19. Characterization of Al-Doped ZnO Transparent Conducting Thin Film Prepared by Off-Axis Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Sin-Liang Ou

    2016-01-01

    Full Text Available The off-axis sputtering technique was used to deposit Al-doped ZnO (AZO films on glass substrates at room temperature. For the illustration of the sample position in the sputtering chamber, the value of R/r is introduced. Here, r is the radius of AZO target and R is the distance between the sample and the center of substrate holder. A systematic study for the effect of deposition parameters on structural, optical, and electrical properties of AZO films has been investigated in detail. As the sample position of R/r is fixed at 1.8, it is found that the as-deposited AZO film has relatively low resistivity of 2.67 × 10−3 Ω-cm and high transmittance above 80% in the visible region. Additionally, after rapid thermal annealing (RTA at 600°C with N2 atmosphere, the resistivity of this AZO film can be further reduced to 1.19 × 10−3 Ω-cm. This indicates the AZO films prepared by off-axis magnetron sputtering and treated via the appropriate RTA process have great potential in optoelectronic applications.

  20. Effect of Al doping on microstructure and optical band gap of ZnO thin film synthesized by successive ion layer adsorption and reaction

    Indian Academy of Sciences (India)

    S Mondal; S R Bhattacharyya; P Mitra

    2013-02-01

    Thin films of pure and aluminum-doped zinc oxide (AZO) were deposited on glass substrates from ammonium zincate bath following a chemical dipping technique called successive ion layer adsorption and reaction (SILAR). Characterization techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive X-rays (EDX) were used to investigate the effect of Al doping on the microstructure of AZO films. Particle size analysis using X-ray line broadening shows marginally increasing trend with increasing Al impurity. The average particle size for pure ZnO is 22.75 nm. It increases to 24.26 nm for 1% AZO film and 25.13 nm for 2% AZO film. Incorporation of Al was confirmed from elemental analysis using EDX. SEM micrograph shows that pure ZnO particles are spherical shaped. However, AZO films show particles with off-spherical shape with compact interconnected grains. The value of band gap for pure ZnO is 3.229 eV and it increases to 3.29 eV for 1% AZO indicating a blue-shift for 1% AZO film. However, for 2% AZO film, a decrease in band gap compared to pure ZnO is observed indicating a red-shift of fundamental absorption edge. Electrical resistance shows an initial decrease with increasing Al content. With further enhancement of Al incorporation, the resistance increases.

  1. Al-doped ZnO nanofilms: Synthesis and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Huczko, A.; Dabrowska, A. [Department of Chemistry, Warsaw University, Warsaw (Poland); Madhup, D.K. [Department of Physics, Kathmandu University, Dhulikhel (Nepal); College of Biomedical Engineering and Applied Sciences, Hadigaun, Kathmandu (Nepal); Subedi, D.P.; Chimouriya, S.P. [Department of Physics, Kathmandu University, Dhulikhel (Nepal)

    2010-12-15

    Al-doped and un-doped ZnO nanofilms on quartz substrate were obtained by ultrasonic spray pyrolysis of salt solutions (mole concentration of Al within 0-10%). The films were characterized by Scanning electron microscopy (SEM), X-ray diffraction (XRD), Atomic force microscopy (AFM) and UV spectroscopy to study the morphology and optical properties. The optical studies showed that the increase in Al within ZnO thin layer increases its band gap energy. The obtained value of band gap energy is very close to the determined oscillation energy. However, the dispersion energy is nearly half of band gap energy value. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Characteristics of the electromagnetic interference shielding effectiveness of Al-doped ZnO thin films deposited by atomic layer deposition

    Science.gov (United States)

    Choi, Yong-June; Gong, Su Cheol; Johnson, David C.; Golledge, Stephen; Yeom, Geun Young; Park, Hyung-Ho

    2013-03-01

    The structural, optical, and electrical properties of Al-doped ZnO (ZnO:Al) thin films deposited by atomic layer deposition (ALD) with a modified precursor pulse sequence were investigated to evaluate the electromagnetic interference shielding effectiveness (EMI-SE). A Zn-Al-O precursor exposure sequence was used in a modified ALD procedure to result in better distribution of Al3+ ions in the ZnO matrix with the aim of reducing the formation of complete nano-laminated structures that may form in the typical alternating ZnO and Al2O3 deposition procedure. The ALD dopant concentration of the ZnO:Al films was varied by adjusting the dopant deposition intervals of the ZnO:Znsbnd Alsbnd O precursor pulse cycle ratios among 24:1, 19:1, 14:1, and 9:1. The lowest obtained resistivity and average transmittance in the visible region (380-780 nm) were 5.876 × 10-4 Ω cm (carrier concentration of 6.02 × 1020 cm-3 and Hall mobility of 17.65 cm2/V s) and 85.93% in the 131 nm thick ZnO:Al(19:1) film, respectively. The average value of the EMI-SE in the range of 30 MHz to 1.5 GHz increased from 1.1 dB for the 121 nm thick undoped ZnO film to 6.5 dB for the 131 nm thick ZnO:Al(19:1) film.

  3. Enhanced photovoltaic performance of quantum dot-sensitized solar cell fabricated using Al-doped ZnO nanorod electrode

    Science.gov (United States)

    Raja, M.; Muthukumarasamy, N.; Velauthapillai, Dhayalan; Balasundrapraphu, R.; Senthil, T. S.; Agilan, S.

    2015-04-01

    ZnO and Al doped ZnO nanorods have been successfully synthesized on ITO substrate via solgel dip coating method without using any catalyst. The X-ray diffraction studies showed that the Al doped ZnO samples are of hexagonal wurtzite structure. The Al ions were successfully incorporated into the ZnO lattice. Scanning electron microscopy images reveal that the average diameter of ZnO nanorods and Al doped ZnO nanorods are ∼300 nm and ∼200 nm respectively. The energy dispersive X-ray (EDS) analysis confirmed the presence Al in the ZnO thin films. The CdS quantum dot sensitized Al doped ZnO solar cell exhibited a power conversion efficiency of 1.5%.

  4. Microstructure and micromorphology of ZnO thin films: Case study on Al doping and annealing effects

    Science.gov (United States)

    Ţălu, Ştefan; Bramowicz, Miroslaw; Kulesza, Slawomir; Solaymani, Shahram; Ghaderi, Atefeh; Dejam, Laya; Elahi, Seyed Mohammad; Boochani, Arash

    2016-05-01

    The aim of this work is to investigate the three-dimensional (3-D) surface texture of Aliminium doped Zinc Oxide (AZO) thin films deposited by Radio Frequency sputtering method on the quartz substrates. Deposited samples were annealed under argon flux at three different temperatures: 400 °C, 500 °C, and 600 °C, followed by gradual cooling down to room temperature. To characterize the structure of samples X-ray diffraction (XRD) patterns and Rutherford Back Scattering (RBS) spectra were applied. The Scanning electron microscope (SEM) and the atomic force microscope (AFM) were applied to study the samples' surface morphology. Then statistical, fractal and functional surface characteristics were computed. The analysis of 3-D surface texture of AZO thin films is crucial to control the 3-D surface topography features and to correct interpretate the surface topographic parameters. It also allows understanding the relationship between 3-D the surface topography and the functional (physical, chemical and mechanical) properties of AZO thin films.

  5. Deposition of transparent and conductive Al-doped ZnO thin films for photovoltaic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, M.A.; Herrero, J.; Gutierrez, M.T. [Instituto de Energias Renovables CIEMAT, Madrid (Spain)

    1996-01-08

    The effect of the substrate temperature on the optoelectronic properties of ZnO-based thin films prepared by rf magnetron sputtering has been studied. Three different targets (Zn/Al 98/2 at%, ZnO:Al 98/2 at% and ZnO:Al{sub 2}O{sub 3} 98/2 wt%) have been investigated in order to compare resulting samples and try to reduce the substrate temperature down to room temperature. From the ZnO:Al{sub 2}O{sub 3} target, transparent conductive zinc oxide has been obtained at 25C with the average optical transmission in the 400-800 nm wavelength range, T=80-90% and resistivity, {rho}=3-5x10{sup -3} {Omega}cm. In Al:ZnO layers, the spatial distribution of the electrical properties across the substrate placed parallel to the target has been improved by depositing at high substrate temperatures, above 200C. Besides, owing to diffusion processes of CuInSe{sub 2} and CdS take place at 200C, an Al:ZnO/CdS/CuInSe{sub 2} polycrystalline solar cell made with the Al:ZnO deposited at 25C as the transparent conductive oxide, has shown a more efficient photovoltaic response, {eta}=6.8%, than the one measured when the aluminium-doped zinc oxide has been prepared at 200C, {eta}=1.8%

  6. Microstructural and surface property variations due to the amorphous region formed by thermal annealing in Al-doped ZnO thin films grown on n-Si (1 0 0) substrates

    International Nuclear Information System (INIS)

    X-ray diffraction (XRD) patterns revealed that the as-grown and annealed Al-doped ZnO (AZO) films grown on the n-Si (1 0 0) substrates were polycrystalline. Transmission electron microscopy (TEM) images showed that bright-contrast regions existed in the grain boundary, and high-resolution TEM (HRTEM) images showed that the bright-contrast regions with an amorphous phase were embedded in the ZnO grains. While the surface roughness of the AZO film annealed at 800 deg. C became smoother, those of the AZO films annealed at 900 and 1000 deg. C became rougher. XRD patterns, TEM images, selected-area electron diffraction patterns, HRTEM images, and atomic force microscopy (AFM) images showed that the crystallinity in the AZO thin films grown on the n-Si (1 0 0) substrates was enhanced resulting from the release in the strain energy for the AZO thin films due to thermal annealing at 800 deg. C. XRD patterns and AFM images show that the crystallinity of the AZO thin films annealed at 1000 deg. C deteriorated due to the formation of the amorphous phase in the ZnO thin films.

  7. Defects generated by MF magnetron sputtering and their influences on the electrical and optical properties of Al doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hao, Changshan; Shirolkar, Mandar M.; Li, Jieni [Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Wu, Binjun [Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); QinZhou College, QinZhou, Guangxi 535000 (China); Yin, Shiliu; Li, Ming [Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China); Wang, Haiqian, E-mail: hqwang@ustc.edu.cn [Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China)

    2015-10-01

    Highlights: • Oxygen interstitial dominates the carrier concentration of sputtered films. • Chemisorbed oxygen decreases the mobility of sputtered films. • Hydrogen annealing can remove oxygen interstitials and chemisorbed oxygen. • High and low resistivity states (HRS and LRS) are observed under hydrogen atmosphere. • Defect configurations of (H{sub 2}){sub i} and H{sub O} + H{sub i} are assigned to HRS and LRS. - Abstract: In this paper, the defects of Al doped ZnO films generated by magnetron sputtering in the deposition processes are comprehensively investigated. It is found that oxygen ion bombardment deteriorates the crystallinity and generates oxygen related defects, such as oxygen interstitials (O{sub i}), chemisorbed oxygen at the grain boundaries (O{sub GB}), and oxygen vacancies (V{sub O}). O{sub i} and O{sub GB} decrease the carrier concentration and mobility of the pristine films remarkably, but they can be removed by hydrogen annealing. However, the grain boundary scattering originated from poor crystallinity cannot be reduced by the annealing below 450 °C. Moreover, the in-situ temperature-dependent resistivity measurement under hydrogen atmosphere suggests that hydrogen atoms are incorporated into the ZnO: Al films and interact with V{sub O}. We propose that there are two energetically favorable states for the incorporated hydrogen. The defect configurations of (H{sub 2}){sub i} and H{sub O} + H{sub i} are assigned to the high resistivity state (HRS) and low resistivity state (LRS) respectively and the switching between these two states is activated by V{sub O} and mediated by a metastable state (H{sub 2}){sup *}{sub O}. The transformation between these two resistivity states leads to a hysteresis loop during the heating and cooling process.

  8. The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient Cu2ZnSnS4 thin-film solar cells prepared by electrodeposition method

    Science.gov (United States)

    Mkawi, E. M.; Ibrahim, K.; Ali, M. K. M.; Farrukh, M. A.; Mohamed, A. S.

    2015-11-01

    Al-doped ZnO (AZO) thin films were potentiostatically deposited on indium tin oxide substrates. The influence of the doping level of the ZnO:Al films was investigated. The results of the X-ray diffraction and scanning electron microscopy analysis revealed that the structural properties of the AZO films were found polycrystalline with a hexagonal wurtzite-type structure along the (002) plane. The grain size of the AZO films was observed as approximately 3 μm in the film doping with 4 mol% ZnO:Al concentration. The thin films also exhibited an optical transmittance as high as 90 % in the wavelength range of 100-1,000 nm. The optical band gap increased from 3.33 to 3.45 eV. Based on the Hall studies, the lowest resistivity (4.78 × 10-3 Ω cm) was observed in the film doping with 3 mol% ZnO:Al concentration. The sheet resistant, carrier concentration and Hall mobility values were found as 10.78 Ω/ square, 9.03 × 1018 cm-3 and 22.01 cm2/v s, respectively, which showed improvements in the properties of AZO thin films. The ZnO:Al thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu2ZnSnS4/ZnS/ZnO/Al grid. The best solar cell efficiency was 2.3 % with V OC of 0.430 V, J SC of 8.24 mA cm-2 and FF of 68.1 %.

  9. Characteristics of Al-doped ZnO thin films prepared in Ar + H{sub 2} atmosphere and their vacuum annealing behavior

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Bailin; Lü, Kun; Wang, Jun; Li, Taotao; Wu, Jun [Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081 (China); Zeng, Dawen; Xie, Changsheng [Department of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2013-11-15

    The microstructure and electrical–optical properties of Al-doped ZnO (AZO) films have been studied as a function of H{sub 2} flux in the magnetron sputtering process at 150 °C and postannealing temperature in vacuum. As H{sub 2} flux increases in the sputtering gas, the AZO films deposited have a (002) preferred orientation rather than the mixed (100) and (002) orientations, the grain size shows a tendency to first increase then decrease, and (002) diffraction peak position is inclined to shift to higher angles first then to lower angles. The resistivity of the films first decreases then increases with H{sub 2} flux, and the lowest resistivity of 4.02 × 10{sup −4}Ω cm is obtained at a H{sub 2} flux of 10 sccm. The average transmittance in the visible region shows little dependence on H{sub 2} flux. As a whole, the AZO films with higher values of figure of merit are obtained when the H{sub 2} flux is in the range of 6–12 sccm. The AZO films deposited in Ar and Ar + H{sub 2} exhibit different annealing behaviors. For the AZO film deposited in Ar, the grain size gradually increases, the stresses are relaxed, the resistivity first decreases then increases, and the average transmittance in the visible region is unchanged initially then somewhat decreased as annealing temperature is increased. The optimum annealing temperature for improving properties of AZO films deposited in Ar is 300 °C. For the AZO films deposited in Ar + H{sub 2}, annealing does not significantly change the microstructure but increases the resistivity of the films; the average transmittance in the visible region remains unchanged initially but greatly reduced with further increase in annealing temperature. The carrier transport in the as-deposited and annealed films appears to be controlled by a mechanism of grain boundary scattering, and the value of E{sub g} increases with the increase in carrier concentration due to Burstein–Moss effect.

  10. Effect of internal stress on the electro-optical behaviour of Al-doped ZnO transparent conductive thin films

    Science.gov (United States)

    Proost, J.; Henry, F.; Tuyaerts, R.; Michotte, S.

    2016-08-01

    In this work, we will report on scientific efforts aimed at unraveling the quantitative effect of elastic strain on the electro-optical behaviour of Al-doped zinc oxide (AZO). AZO thin films have been deposited by reactive magnetron sputtering to thicknesses from 300 to 500 nm, both on extra-clear glass substrates as well as on oxidised Si wafers. This resulted in both cases in polycrystalline, strongly textured (002) films. During deposition, the internal stress evolution in the growing film was monitored in-situ using high resolution curvature measurements. The resulting growth-induced elastic strain, which was found to depend heavily on the oxygen partial pressure, could further be modulated by appropriately choosing the deposition temperature. The latter also induces an additional extrinsic thermal stress component, whose sign depends on the substrate used. As such, a wide range of biaxial internal stresses could be achieved, from -600 MPa in compression up to 800 MPa in tension. The resulting charge carrier mobilities, obtained independently from room temperature Hall measurements, were found to range between 5 and 25 cm2/V s. Interestingly, the maximum mobility occurred at the zero-stress condition, and together with a charge carrier concentration of about 8 × 1020 cm-3, this gave rise to a resistivity of only 300 μΩ cm. From the stress-dependent optical transmission spectra in the range of 200-1000 nm, the pressure coefficient of the optical bandgap was estimated from the corresponding Tauc plots to be 31 meV/GPa, indicating a very high strain-sensitivity as well.

  11. Significant Enhancement in the Conductivity of Al-Doped Zinc Oxide thin Films for TCO Application

    Science.gov (United States)

    Mohite, R. M.; Ansari, J. N.; Roy, A. S.; Kothawale, R. R.

    2016-03-01

    Nanostructured Al-doped Zinc oxide (ZnO) thin films were deposited on glass substrate by chemical bath deposition (CBD) using aqueous zinc nitrate solution and subjected for different characterizations. Effect of Al3+ substitution on the properties of ZnO annealed at 400∘C was studied by XRD and UV-Vis for structural studies, SEM and TEM for surface morphology and DC four probe resistivity measurements for electrical properties. Al3+ substitution does not influence the morphology and well-known peaks related to wurtzite structure of ZnO. Electron microscopy (SEM and TEM) confirms rod shaped Al-doped ZnO nanocrystals with average width of 50nm. The optical band gap determined by UV-Visible spectroscopy was found to be in the range 3.37eV to 3.44eV. An EPR spectrum of AZO reveals peak at g=1.96 is due to shallow donors Zn interstitial. The DC electrical resistivity measurements of Al-doped ZnO show a minimum resistivity of 3.77×10-2Ω-cm. Therefore, these samples have potential use in n-type window layer in optoelectronic devices, organic solar cells, photonic crystals, photo-detectors, light emitting diodes (LEDs), gas sensors and chemical sensors.

  12. Structural, optical and electrical properties of Al-doped ZnO microrods prepared by spray pyrolysis

    International Nuclear Information System (INIS)

    Al-doped ZnO thin films were obtained on glass substrates by spray pyrolysis in air atmosphere. The molar ratio of Al in the spray solution was changed in the range of 0-20 at.% in steps of 5 at.%. X-ray diffraction patterns of the films showed that the undoped and Al-doped ZnO films exhibited hexagonal wurtzite crystal structure with a preferred orientation along (002) direction. Surface morphology of the films obtained by scanning electron microscopy revealed that pure ZnO film grew as quasi-aligned hexagonal shaped microrods with diameters varying between 0.7 and 1.3 μm. However, Al doping resulted in pronounced changes in the morphology of the films such as the reduction in the rod diameter and deterioration in the surface quality of the rods. Nevertheless, the morphology of Al-doped samples still remained rod-like with a hexagonal cross-section. Flower-like structures in the films were observed due to rods slanting to each other when spray solution contained 20 at.% Al. Optical studies indicated that films had a low transmittance and the band gap decreased from 3.15 to 3.10 eV with the increasing Al molar ratio in the spray solution from 0 to 20 at.%.

  13. Effect of thickness on structural and electrical properties of Al-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Arce, R.D.; Schmidt, J.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2015-01-01

    In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness.

  14. Temperature dependent dual hydrogen sensor response of Pd nanoparticle decorated Al doped ZnO surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, D.; Barman, P. B.; Hazra, S. K., E-mail: surajithazra@yahoo.co.in [Department of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh-173234 (India); Dutta, D. [IC Design and Fabrication Centre, Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata-700032 (India); Kumar, M.; Som, T. [SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India)

    2015-10-28

    Sputter deposited Al doped ZnO (AZO) thin films exhibit a dual hydrogen sensing response in the temperature range 40 °C–150 °C after surface modifications with palladium nanoparticles. The unmodified AZO films showed no response in hydrogen in the temperature range 40 °C–150 °C. The operational temperature windows on the low and high temperature sides have been estimated by isolating the semiconductor-to-metal transition temperature zone of the sensor device. The gas response pattern was modeled by considering various adsorption isotherms, which revealed the dominance of heterogeneous adsorption characteristics. The Arrhenius adsorption barrier showed dual variation with change in hydrogen gas concentration on either side of the semiconductor-to-metal transition. A detailed analysis of the hydrogen gas response pattern by considering the changes in nano palladium due to hydrogen adsorption, and semiconductor-to-metal transition of nanocrystalline Al doped ZnO layer due to temperature, along with material characterization studies by glancing incidence X-ray diffraction, atomic force microscopy, and transmission electron microscopy, are presented.

  15. Preparation of Al-doped ZnO nanocrystalline aggregates with enhanced performance for dye adsorption

    Science.gov (United States)

    Zhang, Jin; Que, WenXiu; Yuan, Yuan; Zhong, Peng; Liao, YuLong

    2012-07-01

    Al-doped ZnO (AZO) nanocrystalline aggregates (NCAs) were prepared by a low cost colloid chemistry method and effects of the Al-doped concentration on the morphological and structural properties of the AZO NCAs were studied. The dye adsorption ability of the AZO NCAs with various Al-doped concentrations was also investigated. Results indicate that the doping of the Al ions not only does not change the wurtzite structure of the ZnO crystal but also can reduce the crystallite grain size and the particle size distribution of the NCAs, which gives them a higher specific surface area and dye adsorption ability than that of the ZnO NCAs. The as-prepared AZO NCAs would be a promising material to be applied in the dye sensitized solar cells and water treatment.

  16. Fabrication of Al-Doped ZnO Film with High Conductivity Induced by Photocatalytic Activity

    Science.gov (United States)

    Hong, Jeongsoo; Katsumata, Ken-ichi; Matsushita, Nobuhiro

    2016-10-01

    We have fabricated Al-doped ZnO films by a spin-spray method, achieving high conductivity by Al-ion doping and photocatalytic activity of the ZnO. The surface morphology of the as-deposited films was varied by changing the Al concentration and addition of citrate ions. As-deposited Al-doped ZnO film without citrate ions showed rod array structure with increasing rod width as the Al concentration was increased. Meanwhile, Al-doped ZnO film deposited with addition of citrate ions changed to exhibit dense and continuous surface morphology with high transmittance of 85%. The lowest resistivity recorded for undoped and Al-doped ZnO film was 2.1 × 10-2 Ω cm and 5.9 × 10-3 Ω cm, after ultraviolet (UV) irradiation. The reason for the decreased resistivity is thought to be that Al-ion doping and the photocatalytic activity of ZnO contributed to improve the conductivity.

  17. Ultra-violet absorption induced modifications in bulk and nanoscale electrical transport properties of Al-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mohit; Basu, Tanmoy; Som, Tapobrata, E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India)

    2015-08-07

    Using conductive atomic force microscopy and Kelvin probe force microscopy, we study local electrical transport properties in aluminum-doped zinc oxide (ZnO:Al or AZO) thin films. Current mapping shows a spatial variation in conductivity which corroborates well with the local mapping of donor concentration (∼10{sup 20 }cm{sup −3}). In addition, a strong enhancement in the local current at grains is observed after exposing the film to ultra-violet (UV) light which is attributed to persistent photocurrent. Further, it is shown that UV absorption gives a smooth conduction in AZO film which in turn gives rise to an improvement in the bulk photoresponsivity of an n-AZO/p-Si heterojunction diode. This finding is in contrast to the belief that UV absorption in an AZO layer leads to an optical loss for the underneath absorbing layer of a heterojunction solar cell.

  18. Influence of Annealing on Microstructure and Photoluminescence Properties of Al-Doped ZnO Films

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Effect of annealing temperature and time on the microstructure and photoluminescence (PL) properties of Al doped ZnO thin films deposited on Si (100) substrates by sol-gel method was investigated. An X-ray diffraction (XRD) was used to analyze the structural properties of the thin films. All the thin films have a preferential c-axis orientation, which are enhances in the annealing process. It is found from the PL measurement that near band edge (NBE) emission and deep-level (DL) emissions are observed in as-grown ZnO∶Al thin films. However, the intensity of DLE is much smaller than that of NBE. Enhancement of NBE is clearly observed after thermal annealing in air and the intensity of NBE increases with annealing temperature. Results also show that the PL spectrum is dependent not only on the processing temperature but also on the processing time. The DLE related defects can not be removed by annealing, and on the contrary, the annealing conditions actually favor their formation.

  19. Determining the thermophysical properties of Al-doped ZnO nanoparticles by the photoacoustic technique

    Institute of Scientific and Technical Information of China (English)

    T.A.El-Brolossy; O.Saber; S.S.Ibrahim

    2013-01-01

    The thermal conductivity and specific heat capacity of undoped and Al-doped (1-10 at.%) ZnO nanoparticles prepared using the solvent thermal method are determined by measuring both thermal diffusivity and thermal effusivity of a pressed powder compact of the prepared nanoparticles by using the laser-induced photoacoustic technique.The impact of Al doping versus the microstructure of the samples on such thermal parameters has been investigated.The results reveal an obvious enhancement in the specific heat capacity when decreasing the particle size,while the effect of Al doping on the specific heat capacity is minor.The measured thermal conductivities are about one order of magnitude smaller than that of the bulk ZnO due to several nested reducing heat transfer mechanisms.The results also show that Al doping significantly influences the thermal resistance.Using a simple thermal impedance model,the added thermal resistance due to Al dopant has been estimated.

  20. On the transparent conducting oxide Al doped ZnO: First Principles and Boltzmann equations study

    Energy Technology Data Exchange (ETDEWEB)

    Slassi, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Naji, S. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Department of Physics, Faculty of Science, Ibb University, Ibb (Yemen); Benyoussef, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Hamedoun, M., E-mail: hamedoun@hotmail.com [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); El Kenz, A. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco)

    2014-08-25

    Highlights: • The incorporation of Al in ZnO increases the optical band edge absorption. • Incorporated Al creates shallow donor states of Al-3s around Fermi level. • Transmittance decreases in the visible and IR regions, while it increases in the UV region. • Electrical conductivity increases and reaches almost the saturation for high concentration of Al. - Abstract: We report, in this work, a theoretical study on the electronic, optical and electrical properties of pure and Al doped ZnO with different concentrations. In fact, we investigate these properties using both First Principles calculations within TB-mBJ approximation and Boltzmann equations under the constant relaxation time approximation for charge carriers. It is found out that, the calculated lattice parameters and the optical band gap of pure ZnO are close to the experimental values and in a good agreement with the other theoretical studies. It is also observed that, the incorporations of Al in ZnO increase the optical band edge absorption which leads to a blue shift and no deep impurities levels are induced in the band gap as well. More precisely, these incorporations create shallow donor states around Fermi level in the conduction band minimum from mainly Al-3s orbital. Beside this, it is found that, the transmittance is decreased in the visible and IR regions, while it is significantly improved in UV region. Finally, our calculations show that the electrical conductivity is enhanced as a result of Al doping and it reaches almost the saturation for high concentration of Al. These features make Al doped ZnO a transparent conducting electrode for optoelectronic device applications.

  1. Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Al-doped ZnO (AZO) films were deposited on a fused silica glass substrate by reactive dc unbalanced magnetron sputtering using a Zn–Al (Al: 3.6 at.%) alloy target with an impedance control system. A very thin slightly reduced AZO buffer layer was inserted between the glass substrate and AZO films. For the AZO films deposited at 200 °C, the lowest resistivity in the absence of the buffer layer was 8.0 × 10−4 Ω cm, whereas this was reduced to 5.9 × 10−4 Ω cm after introducing a 5-nm-thick buffer layer. The transmittance for all the films was above 80% in the visible region. The effects of the buffer layer were analysed and discussed in detail. It is found that the insertion of the buffer layer can improve the crystallinity of the AZO film. - Highlights: • Al-doped ZnO (AZO) films with AZO buffer layers were deposited. • Reactive dc unbalance magnetron sputtering with impedance control was used. • Insertion of a buffer layer can lead to a lower resistivity. • Insertion of a buffer layer improved the crystallinity of AZO films

  2. Thermoelectric properties of Al-doped Mg2Si thin films deposited by magnetron sputtering

    Science.gov (United States)

    Chen, Zhi-jian; Zhou, Bai-yang; Li, Jian-xin; Wen, Cui-lian

    2016-11-01

    The Al-doped Mg2Si thin films were fabricated by two-target alternative magnetron sputtering technique, and the influences of different Al doping contents on the thermoelectric properties of Al-doped Mg2Si thin films were investigated. The compositions, crystal structures, electronic transport properties and thermoelectric properties of the thin films were examined using energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Hall coefficient measurement and Seebeck coefficient measurement system, respectively. The EDS results show that the thin films doped with Al target sputtering power of 30 W, 60 W and 90 W have the Al content of 0.68 at.%, 1.56 at.% and 2.85 at.%, respectively. XRD results indicate that the diffraction peaks of Mg2Si become stronger with increasing Al dopant. The results of Hall coefficient measurement and Seebeck coefficient measurement system reveal that all the samples are n-type. The conductivities of Al-doped Mg2Si thin films are significantly greater than that of undoped Mg2Si thin film, and increase with increasing Al doping content. With the increase of temperature, the absolute value of the Seebeck coefficients of Mg2Si base thin films increase firstly and then decrease. The maximum power factor obtained is 3.8 mW m-1 k-2 for 1.56 at.% Al-doped Mg2Si thin film at 573 K.

  3. Plasma versus thermal annealing for the Au-catalyst growth of ZnO nanocones and nanowires on Al-doped ZnO buffer layers

    Science.gov (United States)

    Güell, Frank; Martínez-Alanis, Paulina R.; Roso, Sergio; Salas-Pérez, Carlos I.; García-Sánchez, Mario F.; Santana, Guillermo; Marel Monroy, B.

    2016-06-01

    We successfully synthesized ZnO nanocones and nanowires over polycrystalline Al-doped ZnO (AZO) buffer layers on fused silica substrates by a vapor-transport process using Au-catalyst thin films. Different Au film thicknesses were thermal or plasma annealed in order to analyze their influence on the ZnO nanostructure growth morphology. Striking differences have been observed. Thermal annealing generates a distribution of Au nanoclusters and plasma annealing induces a fragmentation of the Au thin films. While ZnO nanowires are found in the thermal-annealed samples, ZnO nanocones and nanowires have been obtained on the plasma-annealed samples. Enhancement of the preferred c-axis (0001) growth orientation was demonstrated by x-ray diffraction when the ZnO nanocones and nanowires have been grown over the AZO buffer layer. The transmittance spectra of the ZnO nanocones and nanowires show a gradual increase from 375 to 900 nm, and photoluminescence characterization pointed out high concentration of defects leading to observation of a broad emission band in the visible range from 420 to 800 nm. The maximum emission intensity peak position of the broad visible band is related to the thickness of the Au-catalyst for the thermal-annealed samples and to the plasma power for the plasma-annealed samples. Finally, we proposed a model for the plasma versus thermal annealing of the Au-catalyst for the growth of the ZnO nanocones and nanowires. These results are promising for renewable energy applications, in particular for its potential application in solar cells.

  4. Photoluminescence, FTIR and X-ray diffraction studies on undoped and Al-doped ZnO thin films grown on polycrystalline {alpha}-alumina substrates by ultrasonic spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Djelloul, A., E-mail: djelloulabdelkader@yahoo.f [LASPI2A Laboratoire des Structures, Proprietes et Interactions Inter Atomiques, Centre Universitaire Khenchela (Algeria); Aida, M-S. [Laboratoire des Couches minces et Interface, Universite de Constantine (Algeria); Bougdira, J. [Institut Jean Lamour, UMR 7198 CNRS, Nancy Universite, UPV-Metz, Faculte des Sciences et Techniques, B.P. 239, Bd des Aiguillettes, 54506 Vandoeuvre-les-Nancy (France)

    2010-11-15

    Undoped and aluminum-doped zinc oxide (ZnO) thin films have been grown on polycrystalline {alpha}-alumina substrates by ultrasonic spray pyrolysis (USP) technique using zinc acetate dihydrate and aluminum chloride hexahydrate (Al source) dissolved in methanol, ethanol and deionized water. A number of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy, and photoluminescence (PL) were used to characterize the obtained ZnO thin films. It was seen that the orientation changed with increase in substrate temperature. During the ZnO deposition Zn source reacted with polycrystalline {alpha}-Al{sub 2}O{sub 3} substrate to form an intermediate ZnAl{sub 2}O{sub 4} spinel layer. It has been interestingly found that the intensity of green emission at 2.48 eV remarkably increased when the obtained ZnO:Al films were deposited at 380 {sup o}C. The FTIR absorbance intensity of spectroscopic band at 447{+-}6 cm{sup -1} is very sensitive to oxygen sublattice disorder resulting from non-stoichiometry, which is consistent with the result of PL characterization.

  5. Complex hierarchical arrangements of stacked nanoplates in Al-doped ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Ortega, Y. [Departamento de Fisica de Materiales, Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, 28040 Madrid (Spain); Mikrostrukturanalytik, Christian-Albrechts Universitaet zu Kiel, 24143 Kiel (Germany); Haeussler, D.; Jaeger, W. [Mikrostrukturanalytik, Christian-Albrechts Universitaet zu Kiel, 24143 Kiel (Germany); Piqueras, J.; Fernandez, P. [Departamento de Fisica de Materiales, Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, 28040 Madrid (Spain)

    2012-08-15

    Al-doped micro- and nanostructures have been grown by an evaporation-deposition method with a mixture of ZnS and Al{sub 2}O{sub 3} powders as precursor. It has been found that the presence of Al is the cause of the growth of complex morphologies, as rods formed by stacks of nanoplates and other complex hierarchical structures. The role of Al in the growth process has been investigated by electron microscopy techniques. Al-rich particles in specific sites of a central rod lead to hierarchical growth. Transmission electron microscopy shows that in some cases the Al-rich zones are clusters of spinel ZnAl{sub 2}O{sub 4} nanoparticles adhered to ZnO nanorods. Al incorporation into the structures and the dopant effect on the luminescence behavior of the ZnO structures were investigated by energy dispersive spectroscopy and by cathodoluminescence. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Growth and properties of electrodeposited transparent Al-doped ZnO nanostructures

    Science.gov (United States)

    Baka, O.; Mentar, L.; Khelladi, M. R.; Azizi, A.

    2015-12-01

    Al-doped zinc oxide (AZO) nanostructures were fabricated on fluorine-doped tin-oxide (FTO)- coated glass substrates by using electrodeposition. The effects of the doping concentration of Al on the morphological, microstructural, electrical and optical properties of the nanostructures were investigated. From the field emission scanning electron microscopy (FE-SEM) observation, when the amount of Al was increased in the solution, the grains size was observed to decreases. The observed changes in the morphology indicate that Al acts as nucleation centers in the vacancy sites of ZnO and destroys the crystalline structure at high doping level. Effectively, the X-ray diffraction (XRD) analysis indicated that the undoped and the doped ZnO nanostructures has a polycrystalline nature and a hexagonal wurtzite structure with a (002) preferential orientation. The photoluminescence (PL) room-temperature measurements showed that the incorporation of Al in the Zn lattice can improve the intensity of ultraviolet (UV) emission, thus suggesting its greater prospects for use in UV optoelectronic devices.

  7. Structural and luminescence properties of pure and Al-doped ZnO nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Louiza, Arab; Saliha, Hamdelou; Sofiane, Harouni [Laboratory of Physics-Chemistry of Semiconductors, Department of Physics, University Mentouri, Constantine 25000 (Algeria); Kamel, Guergouri, E-mail: kamelguergouri@yahoo.com [Laboratory of Physics-Chemistry of Semiconductors, Department of Physics, University Mentouri, Constantine 25000 (Algeria); Lakhder, Guerbous [Algiers Nuclear Research Center, Algiers 16000 (Algeria)

    2012-06-25

    Highlights: Black-Right-Pointing-Pointer The powders follow the wuertzite structure and possess a very small size. Black-Right-Pointing-Pointer The grain size deceases as a function of Al concentration. Black-Right-Pointing-Pointer The powders' morphology evaluates with increasing Al concentration from pebbles without cavities to highly porous powder. Black-Right-Pointing-Pointer The blue luminescence peaks of the PL spectrum covering the green to the ultraviolet area are the most intense. Black-Right-Pointing-Pointer The violet luminescence intensity decreases with increasing Al concentration. - Abstract: Pure and Al doped zinc oxide nanopowders have been synthesized by sol-gel route. This is a simple and inexpensive method permitting to obtain a very small grain size powders. Zinc acetate dehydrate was first dissolved in a mixture of 2-methoxyethanol and mono-ethanolamine (MEA) solution, were used as a solvent and stabilizer respectively and doped with a quantity of aluminum nitrate, varying from 0 to 10 mol%. The obtained gel is then calcinated in air at 500 Degree-Sign C. The samples are characterized by XRD, SEM and photoluminescence (PL) studies. The XRD results indicate that pure and Al-doped ZnO powders are solid solutions crystallizing in pure wuertzite structure, and consisted of a mixture of nanoparticles with grain size between 23 and 36 nm. The grain size decreases strongly with increasing Al concentration and reaches its lowest value at 5 mol% Al. The PL spectra show that the most important establishment is that the powders show luminescence peaks from green to ultraviolet light, and thus can be used to manufacture transmitters using these emissions. The peaks connected to the blue luminescence are the most intense, and they are generated by transitions involving (Zn{sub i}). The SEM images show a formation of pebbles with sizes decreasing with Al concentration and a morphology evaluating, qualitatively, from pebbles without cavities to highly

  8. On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering

    DEFF Research Database (Denmark)

    Crovetto, Andrea; Ottsen, Tobias Sand; Stamate, Eugen;

    2016-01-01

    The electrical properties of RF-sputtered Al-doped ZnO are often spatially inhomogeneous and strongly dependent on deposition parameters. In this work, we study the mechanisms that limit the minimum resistivity achievable under different deposition regimes. In a low- and intermediate-pressure reg......The electrical properties of RF-sputtered Al-doped ZnO are often spatially inhomogeneous and strongly dependent on deposition parameters. In this work, we study the mechanisms that limit the minimum resistivity achievable under different deposition regimes. In a low- and intermediate......-pressure regime, we find a generalized dependence of the electrical properties, grain size, texture, and Al content on compressive stress, regardless of sputtering pressure or position on the substrate. In a high-pressure regime, a porous microstructure limits the achievable resistivity and causes it to increase...

  9. A Study of Structural and Photoluminescence for Al-Doped CdO Thin Films

    Directory of Open Access Journals (Sweden)

    Bong Ju Lee

    2016-01-01

    Full Text Available Al-doped CdO thin films were prepared by radio frequency magnetron sputtering at different deposition time and substrate temperature. X-ray diffraction showed that the changes in the intensities of the (200, (220, and (311 planes followed a similar trend with increase in deposition time. The surface of the thin film was examined by scanning electron microscopy. Grain sizes of Al-doped CdO thin films increased significantly with increasing deposition time. The film thicknesses were 0.09, 0.12, 0.20, and 0.225 μm for the deposition times of 1, 2, 3, and 4 h, respectively. The photoluminescence spectra of the Al-doped CdO thin films were measured at room temperature. The photoluminescence wavelength changed in the sequence, green, blue, green, and blue, with increasing deposition time, which indicates that blue light emitting films can be fabricated by adjusting the processing parameters.

  10. 绒面AZO最新研究进展及应用%Recent development and application of surface-textured Al doped ZnO transparent conductive oxide thin films

    Institute of Scientific and Technical Information of China (English)

    王文娜; 张大伟; 黄元申; 倪争技; 庄松林

    2012-01-01

    Aluminum doped zinc oxide(AZO) transparent conductive thin films as a kind of transparent conductive film(TCO) have received a wide attention by researchers because of their superior photoelectric performance,and are considered as the replacement materials of the current large-scale use of the traditional indium tin oxide(ITO).Furthermore,surface-textured AZO has been considered an ideal material for the former electrode of solar cells due to its low resistivity,high transmittance and excellent liglht trapping effect which can improve the conversion efficiency of solar cells.Thestatus of preparation and properties of AZO transparent conductive thin filmsare reviewed;in addition,the AZO research trends and future research directions are pointed out based on the research situation home and abroad.%掺铝氧化锌(AZO)透明导电膜作为一种光电性能优异的透明导电膜(TCO)受到研究人员的广泛关注,并被认为是当前大规模使用的传统铟锡氧化物(ITO)的替换材料。绒面AZO薄膜因其电阻率低、高透过率且具有良好的陷光效果,可以提高太阳能电池的光电转换效率,而被认为是太阳能电池前电极的理想材料。综述了绒面AZO透明导电膜的制备方法和性能研究现状,并针对AZO的国内外研究状况提出了今后的发展趋势和研究方向。

  11. Pulsed laser deposition of epitaxial Al-doped ZnO film on sapphire with GaN buffer layer

    International Nuclear Information System (INIS)

    Al-doped ZnO (ZnO:Al) films with thickness in the range of 0.5-0.9 μm were grown epitaxially on epi-GaN/sapphire (0001) by pulsed laser deposition (PLD; XeCl, λ=308 nm). The growth parameters such as substrate temperature, oxygen pressure and pulse repetition rate were established in a sequential manner to obtain highly epitaxial ZnO:Al film. The best films were obtained at substrate temperature of 400 deg. C, oxygen pressure of 1 mTorr and pulse repetition rate of 5 Hz. Reflection high-energy electron diffraction (RHEED) and low temperature photoluminescence (PL) studies confirm the high quality epitaxial nature of the film with near match and stacking order between ZnO and GaN

  12. Enhancement ZnO nanofiber as semiconductor for dye-sensitized solar cells by using Al doped

    Science.gov (United States)

    Sutanto, Bayu; Arifin, Zainal; Suyitno, Hadi, Syamsul; Pranoto, Lia Muliani; Agustia, Yuda Virgantara

    2016-03-01

    The purpose of this research is to produce Al-doped ZnO (AZO) nanofibers in order to enhance the performance of Dye-Sensitized Solar Cell (DSSC). AZO nanofiber semiconductor was manufactured by electrospinning process of Zinc Acetate Dehydrate (Zn(CH3COO)2) solution and precursor of Polyvinyl Acetate (PVA). The doping process of Al was built by dissolving 0-4 wt% in concentrations of AlCl3 to Zinc Acetate. AZO green fiber was sintered at temperature 500°C for an hour. The result shows that Al doped ZnO had capability to increase the electrical conductivity of semiconductor for doping 0, 1, 2, 3, and 4 wt% for 2,07×10-3; 3,71×10-3; 3,59 ×10-3; 3,10 ×10-3 and 2,74 ×10-3 S/m. The best performance of DSSC with 3 cm2 active area was obtained at 1 wt% Al-ZnO which the value of VOC, ISC, FF, and efficiency were 508,43 mV, 3,125 mA, 38,76%, and 0,411% respectively. These coincide with the electrical conductivity of semiconductor and the crystal size of XRD result that has the smallest size as compared to other doping variations.

  13. Al-doped ZnO contact to CdZnTe for x- and gamma-ray detector applications

    Science.gov (United States)

    Roy, U. N.; Camarda, G. S.; Cui, Y.; Gul, R.; Hossain, A.; Yang, G.; Mundle, R. M.; Pradhan, A. K.; James, R. B.

    2016-06-01

    The poor adhesion of common metals to CdZnTe (CZT)/CdTe surfaces has been a long-standing challenge for radiation detector applications. In this present work, we explored the use of an alternative electrode, viz., Al-doped ZnO (AZO) as a replacement to common metallic contacts. ZnO offers several advantages over the latter, such as having a higher hardness, a close match of the coefficients of thermal expansion for CZT and ZnO, and better adhesion to the surface of CZT due to the contact layer being an oxide. The AZO/CZT contact was investigated via high spatial-resolution X-ray response mapping for a planar detector at the micron level. The durability of the device was investigated by acquiring I-V measurements over an 18-month period, and good long-term stability was observed. We have demonstrated that the AZO/CZT/AZO virtual-Frisch-grid device performs fairly well, with comparable or better characteristics than that for the same detector fabricated with gold contacts.

  14. Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer

    KAUST Repository

    Jagadamma, Lethy Krishnan

    2015-10-05

    The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, and yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates. We show that ammonia addition to the aqueous AZO nanoparticle solution is a critically important step toward producing compact and smooth thin films which partially retain the aluminum doping and crystalline order of the starting AZO nanocrystals. The ammonia treatment appears to reduce the native defects via nitrogen incorporation, making the AZO film a very good electron transporter and energetically matched with the fullerene acceptor. Importantly, highly efficient solar cells are achieved without the need for additional surface chemical passivation or modification, which has become an increasingly common route to improving the performance of evaporated or solution-processed ZnO ETLs in solar cells.

  15. Electrical stability of Al-doped ZnO transparent electrode prepared by sol-gel method

    Science.gov (United States)

    Tabassum, Samia; Yamasue, Eiji; Okumura, Hideyuki; Ishihara, Keiichi N.

    2016-07-01

    Al-doped zinc oxide (AZO) thin films have been considered as a promising alternative to tin doped indium oxide (ITO), which is currently used in various optoelectronic applications. However, the environmental stability of AZO film is not satisfactory, in that the resistivity is significantly increases in air. Here, we investigate the resistivity stability of AZO thin films prepared by sol-gel method using various annealing temperatures and durations. The degradation of resistivity property was observed for AZO films stored in ambient or damp heat environment, where the degradation rate was influenced by annealing temperature. A significant improvement of electrical stability was attained in AZO films that were prepared at high annealing temperature. The films, which showed the highest and the lowest increasing rate of resistivity, were further characterized in detail to shed light on the possible mechanisms explaining the improved stability through crystallinity, surface morphology and elemental state of the thin film.

  16. Synthesis of High Crystalline Al-Doped ZnO Nanopowders from Al2O3 and ZnO by Radio-Frequency Thermal Plasma

    Directory of Open Access Journals (Sweden)

    Min-Kyeong Song

    2015-01-01

    Full Text Available High crystalline Al-doped ZnO (AZO nanopowders were prepared by in-flight treatment of ZnO and Al2O3 in Radio-Frequency (RF thermal plasma. Micron-sized (~1 μm ZnO and Al2O3 powders were mixed at Al/Zn ratios of 3.3 and 6.7 at.% and then injected into the RF thermal plasma torch along the centerline at a feeding rate of 6.6 g/min. The RF thermal plasma torch system was operated at the plate power level of ~140 kVA to evaporate the mixture oxides and the resultant vapor species were condensed into solid particles by the high flow rate of quenching gas (~7000 slpm. The FE-SEM images of the as-treated powders showed that the multipod shaped and the whisker type nanoparticles were mainly synthesized. In addition, these nanocrystalline structures were confirmed as the single phase AZO nanopowders with the hexagonal wurtzite ZnO structure by the XRD patterns and FE-TEM results with the SAED image. However, the composition changes of 0.3 and 1.0 at.% were checked for the as-synthesized AZO nanopowders at Al/Zn ratios of 3.3 and 6.7 at.%, respectively, by the XRF data, which can require the adjustment of Al/Zn in the mixture precursors for the applications of high Al doping concentrations.

  17. Fabrication of nanowires of Al-doped ZnO using nanoparticle assisted pulsed laser deposition (NAPLD) for device applications

    Energy Technology Data Exchange (ETDEWEB)

    Thanka Rajan, S. [ECMS Division, CSIR – Central Electrochemical Research Institute, Karaikudi 630 006 (India); Subramanian, B., E-mail: subramanianb3@gmail.com [ECMS Division, CSIR – Central Electrochemical Research Institute, Karaikudi 630 006 (India); Nanda Kumar, A.K.; Jayachandran, M. [ECMS Division, CSIR – Central Electrochemical Research Institute, Karaikudi 630 006 (India); Ramachandra Rao, M.S. [Department of Physics, Indian Institute of Technology Madras, Chennai 600 036 (India)

    2014-01-25

    Graphical abstract: -- Highlights: • Novel technique of NP assisted PLD was employed to obtain Al doped ZnO. • AZO nano wires with aspect ratios exceeding 20 were obtained at 500 sccm Ar gas pressure. • AZO films belong to the most stable wurtzite type. • Films show near band edge emission and defect related emission. -- Abstract: Aluminium doped zinc oxide (AZO) nanostructures have been successfully synthesized on sapphire substrates by using nanoparticle assisted pulsed laser deposition (NAPLD) in Ar atmosphere without using any catalyst. The growth of the AZO nanowires has been investigated by varying the argon flow rates. The coatings have been characterized by X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Atomic force microscopy (AFM), Diffuse Reflectance Spectroscopy (DRS), Laser Raman spectroscopy and Photoluminescence spectroscopy. The results of XRD indicate that the deposited films are crystalline ZnO with hexagonal wurtzite structure with (0 0 2) preferred orientation. FESEM images also clearly reveal the hexagonal structure and the formation of nanowires with aspect ratios between 15 and 20. The surface roughness value of 9.19 nm was observed from AFM analysis. The optical properties of the sample showed that under excitation with λ = 325 nm, an emission band was observed in UV and visible region. The characteristic Raman peaks were detected at 328, 380, 420, 430 cm{sup −1}.

  18. Polymer Solar Cells with Efficiency >10% Enabled via a Facile Solution-Processed Al-Doped ZnO Electron Transporting Layer

    KAUST Repository

    Jagadamma, Lethy Krishnan

    2015-04-22

    A facile and low-temperature (125 °C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates is described. The ammonia-treatment of the aqueous AZO nanoparticle solution produces compact, crystalline, and smooth thin films, which retain the aluminum doping, and eliminates/reduces the native defects by nitrogen incorporation, making them good electron transporters and energetically matched with the fullerene acceptor. It is demonstrated that highly efficient solar cells can be achieved without the need for additional surface chemical modifications of the buffer layer, which is a common requirement for many metal oxide buffer layers to yield efficient solar cells. Also highly efficient solar cells are achieved with thick AZO films (>50 nm), highlighting the suitability of this material for roll-to-roll coating. Preliminary results on the applicability of AZO as electron injection layer in F8BT-based polymer light emitting diode are also presented. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Local probe microscopic studies on Al-doped ZnO: Pseudoferroelectricity and band bending at grain boundaries

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Mohit; Basu, Tanmoy; Som, Tapobrata, E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005 (India)

    2016-01-07

    In this paper, based on piezoforce measurements, we show the presence of opposite polarization at grains and grain boundaries of Al-doped ZnO (AZO). The polarization can be flipped by 180° in phase by switching the polarity of the applied electric field, revealing the existence of nanoscale pseudoferroelectricity in AZO grown on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate. We also demonstrate an experimental evidence on local band bending at grain boundaries of AZO films using conductive atomic force microscopy and Kelvin probe force microscopy. The presence of an opposite polarization at grains and grain boundaries gives rise to a polarization-driven barrier formation at grain boundaries. With the help of conductive atomic force microscopy, we show that the polarization-driven barrier along with the defect-induced electrostatic potential barrier account for the measured local band bending at grain boundaries. The present study opens a new avenue to understand the charge transport in light of both polarization and electrostatic effects.

  20. The Influence of α- and γ-Al2O3 Phases on the Thermoelectric Properties of Al-doped ZnO

    DEFF Research Database (Denmark)

    Han, Li; Van Nong, Ngo; Le, Thanh Hung;

    2013-01-01

    A systematic investigation on the microstructure and thermoelectric properties of Al-doped ZnO using α- and γ-Al2O3 as dopants was conducted in order to understand the doping effect and its mechanism. The samples were prepared by the spark plasma sintering technique from precursors calcined...... at various temperatures. Clear differences in microstructure and thermoelectric properties were observed between the samples doped with α- and γ-Al2O3. At any given calcination temperature, γ-Al2O3 resulted in the formation of a larger amount of the ZnAl2O4 phase in the Al-doped ZnO samples. The average...... exhibited by these samples. The γ-Al2O3 promoted the substitution for donor impurities in ZnO, thus resulting in shrinkage of the unit cell volume and an increase in the electrical conductivity compared with the α-Al2O3-doped ZnO. At a calcination temperature of 1173K, the γ-Al2O3-doped sample showed a ZT...

  1. Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

    International Nuclear Information System (INIS)

    This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature

  2. Solution processed Al doped ZnO film fabrication through electrohydrodynamic atomization

    International Nuclear Information System (INIS)

    In this study, highly transparent, 250 nm thick films of Aluminum doped Zinc-oxide (ZnO:Al) are achieved on glass substrates at ambient conditions through a solution processing technique called electrohydrodynamic atomization. A 10 wt.% monodispersed solution containing 6% ZnO:Al nanoparticles (ZnO/Al2O3) in ethanol has been synthesized first and then used in the deposition process as the working solution. Pure and uniform transparent films with an average transmittance of 93% have been deposited with crystal structure exhibiting both zincite and gahnite phases. Surface composition purity has been confirmed using X-ray photoelectron spectroscopy technique and the clear indication of Zn-2p and Al-2p peaks confirms surface integrity. Fourier Transform Infrared analysis further confirms the presence of aluminum in the samples. The electrical properties are studied by recording and analyzing the current–voltage (I–V) measurements and the resistivity has been estimated from the slope of the IV-curve which is approximately 25 mΩ.cm. The layer roughness has been characterized using atomic force microscopy. - Highlights: ►Aluminum doped Zinc oxide (ZnO:Al) films are made via electrohydrodynamic atomization. ►ZnO:Al nano-particle ink is used to form thin films in single step at room conditions. ►Scanning electron and atomic force microscopes confirm fine layer characteristics. ►X-ray photoelectron and Fourier Transform-Infrared spectroscope confirm film purity. ►Transparent and conductive films have been fabricated with wurtzite structure.

  3. Field-induced doping-mediated tunability in work function of Al-doped ZnO: Kelvin probe force microscopy and first-principle theory

    Science.gov (United States)

    Kumar, Mohit; Mookerjee, Sumit; Som, Tapobrata

    2016-09-01

    We demonstrate that the work function of Al-doped ZnO (AZO) can be tuned externally by applying an electric field. Our experimental investigations using Kelvin probe force microscopy show that by applying a positive or negative tip bias, the work function of AZO film can be enhanced or reduced, which corroborates well with the observed charge transport using conductive atomic force microscopy. These findings are further confirmed by calculations based on first-principles theory. Tuning the work function of AZO by applying an external electric field is not only important to control the charge transport across it, but also to design an Ohmic contact for advanced functional devices.

  4. Effect of aluminium doping on structural and optical properties of ZnO thin films by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Vijayaprasath, G.; Murugan, R.; Ravi, G., E-mail: raviganesa@rediffmail.com, E-mail: gravicrc@gmail.com [Department of Physics, Alagappa University, Karaikudi – 630003 (India); Hayakawa, Y. [Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 (Japan)

    2015-06-24

    We systematically investigated the structural, morphological and optical properties of 0.05 mol % Al doped ZnO (Al:ZnO) thin films deposited on glass substrates by sol-gel spin coating method. The influences of Al doping in ZnO thin films are characterized by Powder X-ray diffraction study. ZnO and Al:ZnO thin films have showed hexagonal wurtzite structure without any secondary phase in c-axis (002) orientation. The SEM images also proved the hexagonal rod like morphologies for both films. All the films exhibited transmittance of 70-80% in the visible range up to 800 nm and cut-off wavelength observed at ∼390 nm corresponding to the fundamental absorption of ZnO. The band gap of the ZnO thin films slightly widened with the Al doping. The photoluminescence properties have been studied for Al: ZnO thin films and the results are presented in detail.

  5. Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Bong Ju Lee

    2015-01-01

    Full Text Available Al-doped zinc-oxide (AZO thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021 to 6.16 × 1017 cm−3 with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD patterns show that the (002/(103 peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS of the O1s were decomposed into metal oxide component (peak A and the adsorbed molecular oxygen on thin films (peak B. The area ratio of XPS peaks (A/B was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

  6. Pressurized polyol synthesis of Al-doped ZnO nanoclusters with high electrical conductivity and low near-infrared transmittance

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ho-Nyun; Shin, Chi-Ho [Surface Technology R& BD Group, Korea Institute of Industrial Technology (KITECH), Incheon 406-840 (Korea, Republic of); Hwang, Duck Kun [Department of Corporate Diagnosis, Small and Medium Business Corporation, Seoul 150-718 (Korea, Republic of); Kim, Haekyoung [School of Materials Science and Engineering, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of); Oh, Kyeongseok [Department of Chemical and Environmental Technology, Inha Technical College, Incheon 402-752 (Korea, Republic of); Kim, Hyun-Jong, E-mail: hjkim23@kitech.re.kr [Surface Technology R& BD Group, Korea Institute of Industrial Technology (KITECH), Incheon 406-840 (Korea, Republic of)

    2015-09-25

    Highlights: • Low-temperature pressurized polyol method synthesized Al-doped ZnO nanoclusters. • Reaction time affected the doping efficiency, resistivity, and NIR transmittance. • The near-IR blocking efficiency of Al-doped ZnO (AZO) nanoclusters reached 85%. • AZO nanocluster coatings could be used for heat reflectors or artificial glasses. - Abstract: In this study, a novel pressurized polyol method is proposed to synthesize aluminum-doped ZnO (AZO) nanoclusters without utilizing additional thermal treatment to avoid the merging of nanoclusters. The size of the AZO nanoclusters range from 100 to 150 nm with a resistivity of 204 Ω cm. The AZO nanoclusters primarily consist of approximately 10-nm nanocrystals that form a spherically clustered morphology. A two-stage growth model has been proposed based on the results of scanning electron microscopy and transmission electron microscopy images, nanocluster sizes, and X-ray diffraction patterns. The primary AZO nanocrystals first nucleate under pressurized conditions and then spontaneously aggregate into larger nanoclusters. Optically, the AZO nanoclusters exhibit a significant decrease in the near-infrared (NIR) transmittance compared to pure ZnO nanoparticles. The NIR blocking efficiency of AZO nanoclusters reached 85%. Moreover, the doping efficiency, resistivity, and NIR transmittance of AZO nanoclusters are influenced by the reaction time in the pressurized polyol solution. On the other hand, the reaction time has no effect on the particle size and crystallinity. An optically transparent coating for the AZO nanoclusters, which consisted of iso-propanol solvent and ultraviolet-curable acrylic binder, was also demonstrated.

  7. Study on the enhanced and stable field emission behavior of a novel electrosprayed Al-doped ZnO bilayer film

    KAUST Repository

    Mahmood, Khalid

    2014-01-01

    A novel electrosprayed bilayer film composed of an over-layer (L 2) of aluminium-doped ZnO (AZO) nanoflakes (NF-AZO) and a under-layer (L1) of AZO nanocrystallites structure (NC-AZO) named BL:NF/NC-AZO is studied as an excellent field-emitter. The XRD pattern demonstrated that the doped bilayer film has preferential growth along the c-axis with hexagonal wurtzite structure and the (0 0 2) peak shifted toward the larger angle side after doping. The lowest turn-on field of ∼2.8 V μm-1, highest emission current density of 1.95 mA cm-2 is obtained for BL:NF/NC-AZO under the field of 6.8 V μm-1 and as well as the highest field enhancement factor (β) is estimated to be 4370 ± 3, compared to pure ZnO bilayer film (BL:NF/NC-ZnO) and also better than NC-AZO film and possesses the excellent long term stability of emission current. The PL intensity of doped ZnO bilayer film is very much stronger than pure ZnO bilayer structure. The superior field emission properties are attributed to the better morphologies, Al-doping and better crystallinity of bilayer AZO films. © 2014 The Royal Society of Chemistry.

  8. Reactive sputter deposition of Al doped TiOx thin films using titanium targets with aluminium inserts

    International Nuclear Information System (INIS)

    Highlights: •Ti(Al)Ox thin films with varying Al fractions and increasing discharge current were deposited. •The reactive sputtering behaviour of Ti targets with Al inserts was studied. •XPS and EDX were used to check the stoichiometry of the films. •Optical transmittance measurements were performed to determine the band gap. -- Abstract: Al doped TiOx thin films were deposited using Ti targets with Al inserts. Both the effect of the number of aluminium inserts and the discharge current on the discharge voltage, on the aluminium content in the thin films, and on the reactive sputtering behaviour was investigated. The aluminium content in the film was measured using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDX). X-ray diffraction (XRD) revealed that the as-deposited thin films were amorphous, independent of the aluminium content or the discharge current. The XPS results indicated that the oxide films were substoichiometric. The optical band gap of the Ti(Al)Ox thin films was investigated as a function of the aluminium concentration and the discharge current. The addition of aluminium results in a significant increase of the band gap at low discharge currents, while no significant influence on the band gap was found at higher currents

  9. Controllable synthesis of flake-like Al-doped ZnO nanostructures and its application in inverted organic solar cells

    Directory of Open Access Journals (Sweden)

    Fan Xi

    2011-01-01

    Full Text Available Abstract Flake-like Al-doped ZnO (AZO nanostructures including dense AZO nanorods were obtained via a low-temperature (100°C hydrothermal process. By doping and varying Al concentrations, the electrical conductivity (σ and morphology of the AZO nanostructures can be readily controlled. The effect of σ and morphology of the AZO nanostructures on the performance of the inverted organic solar cells (IOSCs was studied. It presents that the optimized power conversion efficiency of the AZO-based IOSCs is improved by approximately 58.7% compared with that of un-doped ZnO-based IOSCs. This is attributed to that the flake-like AZO nanostructures of high σ and tunable morphology not only provide a high-conduction pathway to facilitate electron transport but also lead to a large interfacial area for exciton dissociation and charge collection by electrodes.

  10. Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes

    International Nuclear Information System (INIS)

    Aluminum (Al)-doped ZnO (AZO) films with embedded Al nanoclusters were proposed and utilized to enhance the light output power and maximum operation current of GaN-based light-emitting diodes (LEDs). The AZO films were sputtered using ZnO and Al targets in a magnetron cosputtering system. With Al dc power of 7 W and ZnO 100 W ac power, the electron concentration of 4.1x1020 cm-3, electron mobility of 16.2 cm2/V s, and resistivity of 7.2x10-4 Ω cm were obtained for the deposited AZO film annealed at 600 deg. C for 1 min in a N2 ambient. As verified by a high resolution transmission electron microscopy, the deposited AZO films with embedded Al nanoclusters were clearly observed. A 35% increase in light output power of the GaN-based LEDs with Al nanoclusters-embedded AZO films was realized compared with the conventional LEDs operated at 500 mA. It was verified experimentally that the various characteristics of GaN-based LEDs including the antireflection, light scattering, current spreading, and the light extraction efficiency in light emission could be significantly enhanced with the use of Al nanoclusters-embedded AZO films.

  11. Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

    2011-07-01

    We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 μm to a modest 0.50 μm over an underlying 0.10-μm intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 μm/3 μm) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

  12. High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation.

    Science.gov (United States)

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2016-12-01

    Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm(2)/Vs with an N of 2.22 × 10(20) cm(-3). PMID:27365000

  13. Improved photovoltaic performance of inverted polymer solar cells through a sol-gel processed Al-doped ZnO electron extraction layer.

    Science.gov (United States)

    Kim, Jun Young; Cho, Eunae; Kim, Jaehoon; Shin, Hyeonwoo; Roh, Jeongkyun; Thambidurai, Mariyappan; Kang, Chan-mo; Song, Hyung-Jun; Kim, SeongMin; Kim, Hyeok; Lee, Changhee

    2015-09-21

    We demonstrate that nanocrystalline Al-doped zinc oxide (n-AZO) thin film used as an electron-extraction layer can significantly enhance the performance of inverted polymer solar cells based on the bulk heterojunction of poly[[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl] (PCDTBT) and [6,6]-phenyl C(71)-butyric acid methyl ester (PC(70)BM). A synergistic study with both simulation and experiment on n-AZO was carried out to offer a rational guidance for the efficiency improvement. As a result, An n-AZO film with an average grain size of 13 to 22 nm was prepared by a sol-gel spin-coating method, and a minimum resistivity of 2.1 × 10(-3) Ω·cm was obtained for an Al-doping concentration of 5.83 at.%. When an n-AZO film with a 5.83 at.% Al concentration was inserted between the ITO electrode and the active layer (PCDTBT:PC(70)BM), the power conversion efficiency increased from 3.7 to 5.6%. PMID:26406762

  14. Band alignment at the interface between Ni-doped Cr2O3 and Al-doped ZnO: implications for transparent p-n junctions

    Science.gov (United States)

    Arca, Elisabetta; McInerney, Michael A.; Shvets, Igor V.

    2016-06-01

    The realization of transparent electronic and optoelectronic devices requires the use of transparent p-n junctions. In this context, understanding the band alignment at the interface between the p- and n-components represents a fundamental step towards the realization of high performance devices. In this work, the band alignment at the interface between Al-doped ZnO (AZO) and Ni-doped Cr2O3 has been analysed. The formation and evolution of the core levels as the interface progressively forms have been followed by means of x-ray Photoelectron Spectroscopy, x-ray diffraction and x-ray reflectivity. A type two (staggered) band alignment was identified, with the valence band offset and conduction band offset found to be 2.6 eV and 2.5 eV, respectively. The electrical behaviour will be discussed in terms of the position of the bands, the presence of band bending and the expected built-in potential and how these can be engineered in order to achieve the maximum performance for this hetero-structure.

  15. Investigation of Al doping concentration effect on the structural and optical properties of the nanostructured CdO thin film

    Science.gov (United States)

    Gencer Imer, Arife

    2016-04-01

    Nanostructured aluminium (Al) doped cadmium oxide (CdO) films with highly electrical conductivity and optical transparency have been deposited for the first time on soda-lime glass substrates preheated at 250 °C by ultrasonic spray coating technique. The aluminium dopant content in the CdO film was changed from 0 to 5 at%. The influencing of Al doping on the structural, morphological, electrical and optical properties of the CdO nanostructured films has been investigated. Atomic force microscopy study showed the grain size of the films is an order of nanometers, and it decreases with increase in Al dopant content. All the films having cubic structure with a lattice parameter 4.69 Å were determined via X ray diffraction analysis. The optical band gap value of the films, obtained by optical absorption, was found to increase with Al doping. Electrical studies exhibited mobility, carrier concentration and resistivity of the film strongly dependent on the doping content. It has been evaluated that optical band gap, and grain size of the nanostructured CdO film could be modified by Al doping.

  16. Ga and Al doped zinc oxide thin films for transparent conducting oxide applications: Structure-property correlations

    Science.gov (United States)

    Temizer, Namik K.; Nori, Sudhakar; Narayan, Jagdish

    2014-01-01

    We report a detailed investigation on the structure-property correlations in Ga and Al codoped ZnO films on c-sapphire substrates where the thin film microstructure varies from nanocrystalline to single crystal. We have achieved highly epitaxial films with very high optical transmittance (close to 90%) and low resistivity (˜110 μΩ-cm) values. The films grown in an ambient oxygen partial pressure (PO2) of 5 × 10-2 Torr and at growth temperatures from room temperature to 600 °C show semiconducting behavior, whereas samples grown at a PO2 of 1 × 10-3 Torr show metallic nature. The most striking feature is the occurrence of resistivity minima at relatively high temperatures around 110 K in films deposited at high temperatures. The measured optical and transport properties were found to be a strong function of growth conditions implying that the drastic changes are brought about essentially by native point defects. The structure-property correlations reveal that point defects play an important role in modifying the structural, optical, electrical, and magnetic properties and such changes in physical properties are controlled predominantly by the defect content.

  17. Effect of Al and Mg Doping on Optical Properties of ZnO Thin Films Prepared by Spin Coating

    Directory of Open Access Journals (Sweden)

    G. T Yusuf

    2014-08-01

    Full Text Available This paper investigated the influence of aluminum and magnesium doping on the optical and electrical properties of zinc oxide (ZnO thin films for solar cell application. Zinc acetate dehydrates was used as starting material. Aluminum chloride and tin chloride were added to each solution to serve as dopants. X-ray diffractions were analyzed by X-ray diffraction (XRD which revealed crystalline and hexagonal wurtzite structure. All the films showed more than 80% transparency in the visible region. The optical band gap of undoped ZnO thin film was found to be 3.12ev while that of Al-doped and Mg-doped ZnO film was estimated to be 3.16eV and 3.26eV respectively. The resistivity of the films measured were 2.51×10–4 Ω cm for Al-doped, 2.53×10–4 Ω cm for mg-doped and 2.61×10-4 Ω cm for undoped ZnO respectively. The quality of the films deposited in this work is a promising window layer component of a solar cell. The variation in the band gap observed in this work could be explained by Burstein–Moss effect which was fully explained in the discussion section of this work.

  18. Comparative study about Al-doped zinc oxide thin films deposited by Pulsed Electron Deposition and Radio Frequency Magnetron Sputtering as Transparent Conductive Oxide for Cu(In,Ga)Se{sub 2}-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Pattini, F., E-mail: pattini@imem.cnr.it [IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Annoni, F.; Bissoli, F.; Bronzoni, M. [IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Garcia, J.P. [Delft University of Technology, Faculty of Applied Sciences, Delft Product and Process Design Institute, Julianalaan 67, 2628 BC Delft (Netherlands); Gilioli, E.; Rampino, S. [IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma (Italy)

    2015-05-01

    In this study, a comparison between Al-doped ZnO (AZO) as Transparent Conductive Oxide for Cu(In,Ga)Se{sub 2}-based solar cells grown by Pulsed Electron Deposition (PED) and Radio Frequency Magnetron Sputtering (RFMS) was performed. PED yielded polycrystalline [002] mono-oriented thin films with low electrical resistivity and high optical transparency with heater temperatures ranging from room temperature (RT) to 250 °C. The electrical resistivity of these films can be tuned by varying the heater temperature, reaching a minimum value of 3.5 × 10{sup −4} Ωcm at 150 °C and an average transmittance over 90% in the visible range. An AZO film grown at RT was deposited by PED on an actual Cu(In,Ga)Se{sub 2}-based solar cell, resulting to an efficiency value of 15.2% on the best device. This result clearly shows that PED is a suitable technique for growing ZnO-based thin films for devices/applications where low deposition temperature is required. On the other hand, an optimized AZO thin film front contact for thin film solar cells was studied and fabricated via RFMS. The parameters of this technique were tweaked to obtain highly conductive and transparent AZO thin films. The lowest resistivity value of 3.7 × 10{sup −4} Ωcm and an average transmittance of 86% in the 400-1100 nm wavelength range was obtained with a heater temperature of 250 °C. A thick sputtered AZO film was deposited at RT onto an identical cell used for PED-grown AZO, reaching the highest conversion efficiency value of 14.7%. In both cases, neither antireflection coatings nor pure ZnO layer was used. - Highlights: • Pulsed Electron Deposition (PED) lets high quality films grow at low temperature. • Al:ZnO (AZO) thin films grown by PED present high optical and electrical quality. • AZO electrical resistivity can be tuned from 10{sup −4} to 10{sup −2} Ωcm in proper condition. • Cu(In,Ga)Se{sub 2}-based simplified solar cells achieved efficiency of 15.2% for PED-grown AZO.

  19. Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

    Science.gov (United States)

    Brochen, Stéphane; Lafossas, Matthieu; Robin, Ivan-Christophe; Ferret, Pierre; Gemain, Frédérique; Pernot, Julien; Feuillet, Guy

    2014-03-01

    ZnO epilayers usually exhibit high n-type residual doping which is one of the reasons behind the difficulties to dope this material p-type. In this work, we aimed at determining the nature of the involved impurities and their potential role as dopant in ZnO thin films grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire and ZnO substrates. In both cases, secondary ion mass spectroscopy (SIMS) measurements give evidence for a strong diffusion of impurities from the substrate to the epilayer, especially for silicon and aluminum. In the case of samples grown on sapphire substrates, aluminum follows Fick's diffusion law on a wide growth temperature range (800-1000°C). Thus, the saturation solubility and the diffusion coefficient of aluminum in ZnO single crystals have been determined. Furthermore, the comparison between SIMS impurity and effective dopant concentrations determined by capacitance-voltage measurements highlights, on one hand a substitutional mechanism for aluminum diffusion, and on the other hand that silicon acts as a donor in ZnO and not as an amphoteric impurity. In addition, photoluminescence spectra exhibit excitonic recombinations at the same energy for aluminum and silicon, indicating that silicon behaves as an hydrogenic donor in ZnO. Based on these experimental observations, ZnO thin films with a controlled n-type doping in the 1016-1019cm-3 range have been carried out. These results show that MOVPE growth is fully compatible with the achievement of highly Al-doped n-type thin films, but also with the growth of materials with low residual doping, which is a crucial parameter to address ZnO p-type doping issues.

  20. Double-beam pulsed laser deposition for the growth of Al-incorporated ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, L. [Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Circuito Exterior S/N, Ciudad Universitaria, AP 70-186, C.P. 04510 México D.F., México (Mexico); Sánchez-Aké, C., E-mail: citlali.sanchez@ccadet.unam.mx [Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Circuito Exterior S/N, Ciudad Universitaria, AP 70-186, C.P. 04510 México D.F., México (Mexico); Bizarro, M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-186, C.P. 04510 México D.F., México (Mexico)

    2014-05-01

    Pulsed laser deposition in a delayed-double beam configuration is used to incorporate in situ Al in ZnO thin films. In this configuration, two synchronized pulsed-laser beams are employed to ablate independently a ZnO and an Al target. We investigated the effects of relative time delay of plasma plumes on the composition of the films with the aim of evaluating the performance of this technique to produce doped materials. Relative delay between plumes was found to control the incorporation of Al in the film in the range from 14% to 30%. However, to produce low impurity concentration of Al-doped ZnO (with Al incorporation less than 2%) the fluence used to produce the plasmas has more influence over the film composition than the relative plume delay. The minimum incorporation of Al corresponded to a relative delay of 0 μs, due to the interaction between plumes during their expansion.

  1. Al掺杂ZnO纳米棒的性能研究及其在太阳能电池中的应用%Properties of Al-doped ZnO nanorods and the application in organic photovoltaic devices

    Institute of Scientific and Technical Information of China (English)

    丁国静; 秦文静; 杨利营; 黄康; 印寿根

    2012-01-01

    We fabricated the ZnO nanorods with different Al3+-doped concentrations of 0 %, 0.5 %, 1.0 % and 1.5 %, respectively. The morphology and the crystalline of/M-doped ZnO nanorods are investigated by using scanning electron microscope (SEM) and X-ray diffraction (XRD). The optical and electrical properties are researched by ultraviolet-visible (UV-VIS) absorption spectroscopy,time-resolved photo- luminescence (TRPL) spectroscopy and sheet resistance. The analysis indicates that the ZnO nanorods are orderly arrayed and have good crystallinity. As the Al3+ doped concentration increasing,the conductivity of ZnO is improved and the electron transfer between donor and acceptor becomes faster. Finally, Al-doped ZnO nanorods are incorporated in the organic photovoltaic devices as both cathode and electron conductive layer. The optimized device (at lower doping of 0.5%) shows 30% higher Jsc and 50% higher photoelectric conversion efficiency (PCE) compared with the device without Al doping.%通过水热法制备了不同质量分数(0%,0.5%,1.0%和1.5%)的Al3+掺杂ZnO纳米棒,扫描电镜(SEM)、X射线衍射(XRD)、紫外-可见(UV—vis)吸收光谱等测试结果表明,通过这种方法得到了较为规整的ZnO纳米阵列,结晶良好、具有明显的C轴生长取向;掺杂浓度的增加对产物的形貌和晶体结构产生了明显的影响。通过瞬态光谱和面电阻测试发现,Al3+掺杂提高了ZnO传导电子的能力。将Al3+掺杂的ZnO纳米棒同时作为电极与电子传输层,应用于有机太阳能电池器件中,在低浓度(0.5at.%)掺杂时得到最佳的器件性能,相比于未掺杂的ZnO纳米棒,短路电流提高了30%,光电转化效率提高了50%。

  2. Induced growth of high quality ZnO thin films by crystallized amorphous ZnO

    Institute of Scientific and Technical Information of China (English)

    Wang Zhi-Jun; Song Li-Jun; Li Shou-Chun; Lu You-Ming; Tian Yun-Xia; Liu Jia-Yi; Wang Lian-Yuan

    2006-01-01

    This paper reports the induced growth of high quality ZnO thin film by crystallized amorphous ZnO. Firstly amorphous ZnO was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous ZnO as seeds (buffer layer), ZnO thin films have been grown in diethyene glycol solution of zinc acetate at 80℃. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the ZnO. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the ZnO thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality ZnO thin film was obtained.

  3. Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

    Institute of Scientific and Technical Information of China (English)

    招瑜; 范冰丰; 陈义廷; 卓毅; 庞洲骏; 刘振; 王钢

    2016-01-01

    We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19%at 20 mA and 56%at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage.

  4. Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

    Science.gov (United States)

    Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

    2016-07-01

    We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

  5. Al and Fe co-doped transparent conducting ZnO thin film for mediator-less biosensing application

    Directory of Open Access Journals (Sweden)

    Shibu Saha

    2011-12-01

    Full Text Available Highly c-axis oriented Al and Fe co-doped ZnO (ZAF thin film is prepared by pulsed laser deposition. Fe introduces redox centre along with shallow donor level while Al doping enhances conductivity of ZnO, thus removing the requirement of both mediator and bottom conducting layer in bioelectrode. Model enzyme (glucose oxidase, was immobilized on surface of ZAF matrix. Cyclic voltammetry and photometric assay show that prepared bio-electrode is sensitive to glucose concentration with enhanced response of 0.18 μAmM-1cm-2 and low Km ∼ 2.01 mM. The results illustrate that ZAF is an attractive matrix for realization of miniaturized mediator-less solid state biosensor.

  6. Influence of low sputtering pressure on structural, electrical and optical properties of Al-doped zinc oxide thin films

    Science.gov (United States)

    Zhang, Zengguang; Tang, Yang; Chen, Jingyun; Chen, Jie

    2016-08-01

    Aluminum-doped zinc oxide thin films were deposited without intentional heating by radio-frequency magnetron sputtering. The sputtering pressure varied from 0.02 Pa to 0.32 Pa while the deposition power was kept at 240 W for all depositions. The structural properties of as-deposited films were analyzed by X-ray diffraction and scanning electron microscopy, indicating that the deposited films have a strong preferred c-axis (002) orientation perpendicular to the substrate regardless of sputtering pressure. The minimum resistivity of 6.4×10-4 Ω cm is obtained at 0.05 Pa, which is mainly influenced by the hall mobility, rather than carrier concentration. The highest transmittance could be ~80% on average in the visible range under various working pressures, and the largest bandgap achieved is about 3.82 eV. The ultraviolet emission peaks in photoluminescence spectra are centered at about 360 nm. A new mechanism is proposed to explain the dependence of the electrical and optical properties on structural evolution of deposited films.

  7. Synthesis and characterization of ZnO thin films

    Science.gov (United States)

    Anilkumar T., S.; Girija M., L.; Venkatesh, J.

    2016-05-01

    Zinc oxide (ZnO) Thin films were deposited on glass substrate using Spin coating method. Zinc acetate dehydrate, Carbinol and Mono-ethanolamine were used as the precursor, solvent and stabilizer respectively to prepare ZnO Thin-films. The molar ratio of Monoethanolamine to Zinc acetate was maintained as approximately 1. The thickness of the films was determined by Interference technique. The optical properties of the films were studied by UV Vis-Spectrophotometer. From transmittance and absorbance curve, the energy band gap of ZnO is found out. Electrical Conductivity measurements of ZnO are carried out by two probe method and Activation energy for the electrical conductivity of ZnO are found out. The crystal structure and orientation of the films were analyzed by XRD. The XRD patterns show that the ZnO films are polycrystalline with wurtzite hexagonal structure.

  8. Microstructure and blueshift in optical band gap of nanocrystalline Al{sub x}Zn{sub 1−x}O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Majeed Khan, M.A., E-mail: majeed_phys@rediffmail.com [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451 (Saudi Arabia); Kumar, Sushil [Materials ScienceLaboratory, Department of Physics, Chaudhary Devi Lal University, Sirsa 125055 (India); Naziruddin Khan, M.; Ahamed, Maqusood [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451 (Saudi Arabia); Al Dwayyan, A.S. [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh 11451 (Saudi Arabia); Physics and Astronomy Department, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

    2014-11-15

    In this paper, we report the structural and optical properties of Al doped ZnO (AZO) thin films grown on glass substrates using the sol–gel process. To understand the effect of Al doping on the structural and optical response of ZnO nanoparticles thin films, the prepared samples have been characterized using X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), photoluminescence (PL), UV–vis absorption and Raman spectroscopy. X-ray diffraction results show that Al doped ZnO nanoparticles have hexagonal phase similar to ZnO nanoparticles. TEM images as well as XRD data exhibit the estimated size of nanoparticles to be in the range 35–45 nm. The optical band gap has been determined from optical absorption spectra. The band gap varied from 3.27 eV for undoped ZnO film to 3.87 eV for AZO film having 3 atwt% Al. The blue shift in energy band gap mainly related to carrier concentration induced by Al-donor doping, and to the degree of crystalline order. Photoluminescence study further confirms the blue shift in UV emission when Al doping concentration is increased, as a consequence of extension in band gap. - Highlights: • Undoped and Al doped ZnO nanoparticles has been synthesized by the sol–gel method. • Undoped and Al doped ZnO films have a (0 0 2) peak, indicating a hexagonal wurtzite structure. • The stacking faults induced by Al-doped provide another path for electron transfer. • Influence of Al doping on the physical properties of ZnO nanoparticles was investigated. • The quality and crystallinity of Al-doped ZnO films were investigated by varying the Al compositions.

  9. Atomic layer deposition of high-quality Al{sub 2}O{sub 3} and Al-doped TiO{sub 2} thin films from hydrogen-free precursors

    Energy Technology Data Exchange (ETDEWEB)

    Aarik, Lauri, E-mail: lauri.aarik@ut.ee [University of Tartu, Institute of Physics, Riia 142, 51014 Tartu (Estonia); Arroval, Tõnis; Rammula, Raul; Mändar, Hugo [University of Tartu, Institute of Physics, Riia 142, 51014 Tartu (Estonia); Sammelselg, Väino [University of Tartu, Institute of Physics, Riia 142, 51014 Tartu (Estonia); University of Tartu, Institute of Chemistry, Ravila 14A, 50411 Tartu (Estonia); Hudec, Boris; Hušeková, Kristína; Fröhlich, Karol [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Aarik, Jaan [University of Tartu, Institute of Physics, Riia 142, 51014 Tartu (Estonia)

    2014-08-28

    Possibilities for atomic layer deposition of Al{sub 2}O{sub 3} films from chloride and ozone were studied in order to avoid application of precursors that could leave hydrogen impurities in the films. Growth of Al{sub 2}O{sub 3} was obtained at substrate temperatures of 300–450 °C. At these temperatures, the growth rate was close to the values reported for corresponding H{sub 2}O-based processes. Studies of thin-film composition revealed that reactivity of O{sub 3} was sufficient to ensure deposition of films with chlorine concentration below 0.05 at.% at 350–450 °C. Application of the AlCl{sub 3}–O{sub 3} atomic layer deposition process for in situ Al-doping of TiO{sub 2} thin films demonstrated that the amount of Al incorporated into the films during a single deposition cycle depended on the doping level. A reason for this effect was the influence of Al-doping on the phase composition of the film material. Al-doping of the TiO{sub 2} films significantly reduced the surface roughness allowing deposition of high-density films with very flat surfaces. In capacitor structures with capacitance equivalent oxide thicknesses below 0.4 nm, the Al-doped TiO{sub 2} films deposited from TiCl{sub 4}, AlCl{sub 3} and O{sub 3} demonstrated markedly lower leakage current densities than the films with similar capacitance densities grown from TiCl{sub 4}, Al(CH{sub 3}){sub 3} and H{sub 2}O and from TiCl{sub 4}, Al(CH{sub 3}){sub 3} and O{sub 3} did. - Highlights: • Atomic layer deposition of thin films from AlCl{sub 3} and O{sub 3} was investigated. • Growth of Al{sub 2}O{sub 3} was obtained at temperatures 300–450 °C. • Growth rates up to 0.069 nm per cycle were observed. • Deposition of Al-doped TiO{sub 2} films from TiCl{sub 4}, AlCl{sub 3} and O{sub 3} was studied. • Films with superior dielectric properties were grown in the hydrogen-free process.

  10. Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique

    Science.gov (United States)

    Kassmi, M.; Pointet, J.; Gonon, P.; Bsiesy, A.; Vallée, C.; Jomni, F.

    2016-06-01

    Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO2 rutile films which are deposited on RuO2 by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz-100 kHz range, for ac electric fields up to 1 MVrms/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreases the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MVrms/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.

  11. Different magnetothermoelectric behavior in Al- and Ga-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Han; Fang, Liang, E-mail: lfang@cqu.edu.cn; Tian, Dexiang; Wu, Fang; Li, Wanjun

    2014-03-05

    Highlights: • The effect of magnetic field on the thermoelectric property was investigated. • The tendencies of the |S| for AZO and GZO varying with magnetic field were observed. • Magnetic field can decrease the |S| of AZO but increase that of GZO. -- Abstract: This essay mainly focuses on the influence of magnetic filed on thermoelectric properties of Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films. The Seebeck coefficients (S) of AZO and GZO films show opposite behavior as a function of the magnetic field intensity (B), which should be attributed to the effect of magnetic field on the effective electron number and potential barrier at grain boundary. For GZO film, with higher electron number, the influence of magnetic field on the effective electron number is the dominant factor, while more potential barriers at grain boundaries exist in AZO film due to the Al–O bond length with a higher mismatch to Zn–O bond length than the Ga–O bond length, so the effect of magnetic field on the potential barriers at grain boundaries dominates in AZO film.

  12. Epsilon-Near-Zero Al-Doped ZnO for Ultrafast Switching at Telecom Wavelengths: Outpacing the Traditional Amplitude-Bandwidth Trade-Off

    CERN Document Server

    Kinsey, N; Kim, J; Ferrera, M; Shalaev, V M; Boltasseva, A

    2015-01-01

    Transparent conducting oxides have recently gained great attention as CMOS-compatible materials for applications in nanophotonics due to their low optical loss, metal-like behavior, versatile/tailorable optical properties, and established fabrication procedures. In particular, aluminum doped zinc oxide (AZO) is very attractive because its dielectric permittivity can be engineered over a broad range in the near infrared and infrared. However, despite all these beneficial features, the slow (> 100 ps) electron-hole recombination time typical of these compounds still represents a fundamental limitation impeding ultrafast optical modulation. Here we report the first epsilon-near-zero AZO thin films which simultaneously exhibit ultra-fast carrier dynamics (excitation and recombination time below 1 ps) and an outstanding reflectance modulation up to 40% for very low pump fluence levels (< 4 mJ/cm2) at the telecom wavelength of 1.3 {\\mu}m. The unique properties of the demonstrated AZO thin films are the result of...

  13. Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol–gel method

    International Nuclear Information System (INIS)

    Highlights: • F/Sn and Al co-doped ZnO thin films were synthesized by sol–gel method. • The co-doped nanocrystals exhibit good crystal quality. • The origin of the photoluminescence emissions was discussed. • The films showed high transmittance and low resistivity. -- Abstract: Al doped ZnO, Al–Sn co-doped ZnO and Al–F co-doped ZnO nanocrystals were successfully synthesized onto glass substrates by the sol–gel method. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). The results indicated that all the films were polycrystalline with a hexagonal wurtzite structure and exhibited a c-axis preferred orientation. The electrical and optical properties were also investigated by 4-point probe device and Uv–vis spectroscopy, room temperature photoluminescence (PL) and Raman spectrum (Raman), respectively. The PL and Raman results suggested that the co-doped films with a very low defect concentration and exhibit a better crystallinity than AZO thin films. The XPS study confirmed the incorporation of Al, Sn and F ions in the ZnO lattice

  14. Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hung-Wei, E-mail: hwwu@mail.ksu.edu.tw [Department of Computer and Communication, Kun Shan University, No. 949, Dawan Rd., Yongkang Dist., Tainan City 710, Taiwan (China); Yang, Ru-Yuan [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China); Hsiung, Chin-Min; Chu, Chien-Hsun [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China)

    2012-10-01

    Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm, which can be decreased to 3.8 Multiplication-Sign 10{sup -5} {Omega}-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 Multiplication-Sign 10{sup -3} {Omega}{sup -1}. It was shown that the multilayer thin films have potential for applications in optoelectronics. - Highlights: Black-Right-Pointing-Pointer High-quality Al-doped ZnO (AZO)/Ag/AZO Transparent Conducting Oxide films. Black-Right-Pointing-Pointer AZO films (30 nm) made by RF sputtering; E-beam evaporation for Ag film (5-15 nm). Black-Right-Pointing-Pointer Influence of Ag thickness on optical and electrical properties were analyzed. Black-Right-Pointing-Pointer High quality multilayer film with optimal intermediate Ag layer thickness of 10 nm. Black-Right-Pointing-Pointer 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm resistivity, 91.89% transmittance at 470 nm obtained and reproducible.

  15. ZnO thin films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tsoutsouva, M.G. [Laboratory of Physical Metallurgy, National Technical University of Athens, Zografos, 15780 Athens (Greece); Panagopoulos, C.N., E-mail: chpanag@metal.ntua.gr [Laboratory of Physical Metallurgy, National Technical University of Athens, Zografos, 15780 Athens (Greece); Papadimitriou, D. [National Technical University of Athens, Department of Physics, GR-15780 Athens (Greece); Fasaki, I.; Kompitsas, M. [Theor. and Phys./Chem. Institute, National Hellenic Research Foundation, 48 Vas. Konstantinou Ave., 11635 Athens (Greece)

    2011-04-15

    Zinc oxide (ZnO) thin films were deposited on soda lime glass substrates by pulsed laser deposition (PLD) in an oxygen-reactive atmosphere. The structural, optical, and electrical properties of the as-prepared thin films were studied in dependence of substrate temperature and oxygen pressure. High quality polycrystalline ZnO films with hexagonal wurtzite structure were deposited at substrate temperatures of 100 and 300 deg. C. The RMS roughness of the deposited oxide films was found to be in the range 2-9 nm and was only slightly dependent on substrate temperature and oxygen pressure. Electrical measurements indicated a decrease of film resistivity with the increase of substrate temperature and the decrease of oxygen pressure. The ZnO films exhibited high transmittance of 90% and their energy band gap and thickness were in the range 3.26-3.30 eV and 256-627 nm, respectively.

  16. ZnO Thin Film Electronics for More than Displays

    Science.gov (United States)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  17. A high power ZnO thin film piezoelectric generator

    Science.gov (United States)

    Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

    2016-02-01

    A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

  18. Influence of process parameters on band gap of AI-doped ZnO film

    Institute of Scientific and Technical Information of China (English)

    Diqiu HUANG; Xiangbin ZENG; Yajuan ZHENG; Xiaojin WANG; Yanyan YANG

    2013-01-01

    This paper presents the influence of process parameters, such as argon (Ar) flow rate, sputtering power and substrate temperature on the band gap of Al-doped ZnO film, Al-doped ZnO thin films were fabricated by radio frequency (RF) magnetron sputtering technology and deposited on polyimide and glass substrates. Under different Ar flow rates varied from 30 to 70 sccm, the band gap of thin films were changed from 3.56 to 3.67 eV. As sputtering power ranged from 125 to 200 W, the band gap was varied from 3.28 to 3.82 eV; the band gap was between 3.41 and 3.88 eV as substrate temperature increases from 150℃ to 300℃. Furthermore, the correlation between carrier concentration and band gap was investigated by HALL. These results demonstrate that the band gap of the Al-doped ZnO thin film can be adjusted by changing the Ar flow rate, sputtering power and substrate temperature, which can improve the performance of semiconductor devices related to Al-doped ZnO thin film.

  19. Compositional and physico-optical characterization of 0-5% Al-doped zinc oxide films prepared by chemical spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Romero, R; Lopez-Ibanez, R; Ramos-Barrado, J R; Martin, F; Leinen, D [Laboratorio de Materiales y Superficie (Unidad Asociada al CSIC), Dpto. Fisica Aplicada I and Dpto. IngenierIa Quimica, Universidad de Malaga, E-29071 Malaga (Spain); Dalchiele, E A, E-mail: dietmar@uma.e [Instituto de Fisica, Facultad de IngenierIa, Universidad de la Republica, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay)

    2010-03-10

    Highly transparent polycrystalline Al-doped ZnO thin films were deposited in open atmosphere by chemical spray pyrolysis on fused silica and glass substrates at 623 K. The influence of Al doping, 0 to 5%, was studied. XPS results revealed a linear relationship between Al content in the precursor solutions and Al content in the films. XPS depth profiling showed that any carbon contamination is restricted to the uppermost surface of the films. Optical transmission measurements revealed an increasing number of dispersion centres as well as a band gap shift to higher values with increasing Al content in the films. At fixed Al concentration, the comparison of the absorption coefficient for increasing film thickness showed that the films are very homogeneous, not changing their materials properties such as absorption coefficient and band gap.

  20. Impact of Al doping on microstructure and optical characteristics of tetrapod-like zinc oxide whiskers

    International Nuclear Information System (INIS)

    Al-doped tetrapod-like zinc oxide whiskers with different Al dopant concentration (0.3∼1.0 mol%) were prepared by solid state reaction method using T-ZnOw and AlCl3 powder as raw materials. X-ray diffraction and SEM microscopy were applied to characterize the structure and surface morphology of the T-ZnOw. The shift of diffraction peaks of ZnO towards high angle indicated the increase of Al-doping concentration. The ZnO whiskers with 0.5 mol% Al doping concentration exhibit good photoluminescence properties with a large PL intensity ratio value (24) and a narrow FWHM value (15 nm). The improvement photoluminescence properties are attributed to the doping of Al element in the ZnO lattice. It is thought that the visible emission with the wavelength of 517 nm is attributed to the electronics transition from Al atoms to Zn vacancy level.

  1. Effects of doping concentration on properties of Mn-doped ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    Gao Li; Zhang Jian-Min

    2009-01-01

    This paper reports that the radio frequency magnetron sputtering is used to fabricate ZnO and Mn-doped ZnO thin films on glass substrates at 500 ℃. The Mn-doped ZnO thin films present wurtzite structure of ZnO and have a smoother surface, better conductivity but no ferromagnetism. The x-ray photoelectron spectroscopy results show that the binding energy of Mn_(2p3/2) increases with increasing Mn content slightly, and the state of Mn in the Mn-doped ZnO thin films is divalent. The chemisorbed oxygen in the Mn-doped ZnO thin films increases with increasing Mn doping concentration. The photoluminescence spectra of ZnO and Mn-doped ZnO thin films have a similar ultraviolet emission. The yellow green emissions of 4 wt. % and 10 wt. % Mn-doped thin films are quenched, whereas the yellow green emission occurs because of abundant oxygen vacancies in the Mn-doped ZnO thin films after 20 wt. % Mn doping. Compared with pure ZnO thin film, the bandgap of the Mn-doped ZnO thin films increases with increasing Mn content.

  2. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    Science.gov (United States)

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; Williams, Garth; Thieme, Juergen; Nykypanchuk, Dmytro; Li, Li; Muto, Atsushi; Chen-Wiegart, Yu-chen Karen

    2016-08-01

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and wide angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100-200 nm wide by 1 μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. Utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.

  3. Comparative study on the properties of ZnO nanowires and nanocrystalline thin films

    OpenAIRE

    Broitman, Esteban; Bojorge, C; Elhordoy, F; Kent, V.; Zanini Gadioli, G; Marotti, R.; Canepa, H; Dalchiele, E. A.

    2012-01-01

    The microstructural, morphological, optical and water-adsorption properties of nanocrystalline ZnO thin films and ZnO nanowires were studied and compared. The ZnO thin films were obtained by a sol–gel process, while the ZnO nanowires were electrochemically grown onto a ZnO sol–gel spin-coated seed layer. Thin films and nanowire samples were deposited onto crystalline quartz substrates covered by an Au electrode, able to be used in a quartz crystal microbalance. X-ray diffraction measurements ...

  4. Improved conversion efficiency of amorphous Si solar cells using a mesoporous ZnO pattern

    Science.gov (United States)

    Go, Bit-Na; Kim, Yang Doo; suk Oh, Kyoung; Kim, Chaehyun; Choi, Hak-Jong; Lee, Heon

    2014-09-01

    To provide a front transparent electrode for use in highly efficient hydrogenated amorphous silicon (a-Si:H) thin-film solar cells, porous flat layer and micro-patterns of zinc oxide (ZnO) nanoparticle (NP) layers were prepared through ultraviolet nanoimprint lithography (UV-NIL) and deposited on Al-doped ZnO (AZO) layers. Through this, it was found that a porous micro-pattern of ZnO NPs dispersed in resin can optimize the light-trapping pattern, with the efficiency of solar cells based on patterned or flat mesoporous ZnO layers increased by 27% and 12%, respectively.

  5. Preparation of highly textured surface ZnO thin films

    International Nuclear Information System (INIS)

    In order to investigate the influence of the deposition technique upon the surface morphology of ZnO thin films we have employed two methods, which are the spray pyrolysis and magnetron sputtering. The surface morphology of ZnO thin films is a crucial parameter for controlling the reflection losses reduction when the coating is used as a transparent front layer in solar cells. The morphology of the surface was characterized by optical microscopy and profilometry. The results indicate that spray technique enables the elaboration of films with a highly rough surface, however sputtering technique yields to smoother films. This difference originates from the different deposition processes involved in both techniques. A vertical r.m.s. (root mean square) roughness in the order of 200 nm was measured in sprayed film; however only 40 nm r.m.s. vertical roughness is reported in sputtered one. The surface morphology in sprayed films causes the incident light diffraction; consequently the reflection is reduced up to zero. Therefore we show that ZnO thin films deposited with spray method is a potential candidate for use as a front transparent layer in solar cells

  6. Optical characterization of ZnO thin films deposited by RF magnetron sputtering method

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    This study investigated the process parameter effects on the structural and optical properties of ZnO thin film using radio frequency (RF) magnetron sputtering on amorphous glass substrates. The process parameters included RF power and working pressure. Results show that RF power was increased to promote the crystalline quality and decrease ZnO thin film defects. However, when the working pressure was increased to 3 Pa the ZnO thin film crystalline quality became worse. At a 200 W RF power and 1 Pa working pressure, the ZnO thin film with an optical band gap energy of 3.225 eV was obtained.

  7. Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

    KAUST Repository

    Wang, Xudong

    2009-02-05

    This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed in comparison with the growth of ZnO nanowires. The ZnO mesoporous film was successfully applied as a gas sensor. The fabrication and growth analysis of the mesoporous ZnO thin film gi ve general guidance for the controlled growth of nanostructures. It also pro vides a unique structure with a superhigh surface-to-volume ratio for surface-related applications. © 2009 American Chemical Society.

  8. Role of ZnO thin film in the vertically aligned growth of ZnO nanorods by chemical bath deposition

    Science.gov (United States)

    Son, Nguyen Thanh; Noh, Jin-Seo; Park, Sungho

    2016-08-01

    The effect of ZnO thin film on the growth of ZnO nanorods was investigated. ZnO thin films were sputter-deposited on Si substrate with varying the thickness. ZnO nanorods were grown on the thin film using a chemical bath deposition (CBD) method at 90 °C. The ZnO thin films showed granular structure and vertical roughness on the surface, which facilitated the vertical growth of ZnO nanorods. The average grain size and the surface roughness of ZnO film increased with an increase in film thickness, and this led to the increase in both the average diameter and the average length of vertically grown ZnO nanorods. In particular, it was found that the average diameter of ZnO nanorods was very close to the average grain size of ZnO thin film, confirming the role of ZnO film as a seed layer for the vertical growth of ZnO nanorods. The CBD growth on ZnO seed layers may provide a facile route to engineering vertically aligned ZnO nanorod arrays.

  9. Two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Linhua, E-mail: congyu3256@tom.com [School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Optics and Photonic Technology Laboratory, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Zheng, Gaige; Zhao, Lilong; Pei, Shixin [School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Optics and Photonic Technology Laboratory, Nanjing University of Information Science and Technology, Nanjing 210044 (China)

    2015-02-15

    Ag-doped ZnO thin films were prepared by a sol–gel method. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), UV–vis and photoluminescence spectra. The results show that the Ag in the ZnO thin films annealed at 500 °C for 1 h substitutes for Zn and exists in the form of Ag{sup +} ion (Ag{sub Zn}) while the Ag in the ZnO thin films without a post-annealing mainly exists in the form of simple substance (Ag{sup 0}). The incorporation of Ag indeed can improve the ultraviolet emission of ZnO thin films and suppress the visible emissions at the same time. However, the mechanisms on the ultraviolet emission enhancement in the annealed and unannealed Ag-doped ZnO thin films are very different. As for the post-annealed Ag-doped ZnO thin films, the UV emission enhancement maybe mainly results from more electron–hole pairs (excitons) due to Ag-doping while for the unannealed Ag-doped ZnO thin films; the UV emission enhancement is attributed to the resonant coupling between exciton emission in ZnO and localized surface plasmon in Ag nanoparticles. - Highlights: • Ag-doped ZnO thin films have been prepared by the sol–gel method. • Ag-doping can enhance ultraviolet emission of ZnO thin films and depress the visible emissions at the same time. • There are two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films. • The UV emission enhancement from the resonant coupling between excitonic emissions and localized surface plasmon in Ag nanoparticle is very attractive.

  10. Atomic layer deposition of ZnO thin films and dot structures

    International Nuclear Information System (INIS)

    Successful growth of thin films and quantum dots of ZnO by atomic layer deposition (ALD) is reported. Properties of ZnO films produced by four different ALD-procedures and by oxidation of ALD-grown ZnS films are discussed. The use of thin ZnO films as buffer layers for GaN deposition is also shortly described. (author)

  11. Electrodeposition and Characterization of ZnO Thin Films

    Institute of Scientific and Technical Information of China (English)

    HUANG Yan-wei; YAO Ning; ZHANG bing-lin

    2007-01-01

    Thin films of ZnO were electrodeposited from an aqueous solution of Zn(NO3)2 on indium tin oxide(ITO)-covered glass substrate. The analysis of X-ray diffraction(XRD) and scanning electron micrograph(SEM) indicated that the obtained ZnO films had a compact hexagonal wurtzite type structure with preferable (002) growth direction. A sharp near-UV emission peak located at 380 nm and a strong orange-red emission peak located at 593 nm were observed in the photoluminescence, when excited with 325 nm wavelength at room temperature. Then the prepared ZnO films were introduced as anode phosphors into the field emission test. It was found that orange-red cathode-luminescence was observed and the luminescent brightness was enhanced by annealing. When annealing temperature increased about 600 ℃, the photoluminescence with peak of 531 nm and the green cathode-luminescence were observed. The tests showed that the brightness of about 2×102 cd/m2 was obtained at electric field of 2 V/μm for annealed sample. The results revealed that the film could be a good kind of low-voltage drived cathode-luminescence phosphor.

  12. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    Science.gov (United States)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  13. Al-doped ZnO/Ag grid hybrid transparent conductive electrodes fabricated using a low-temperature process

    Energy Technology Data Exchange (ETDEWEB)

    An, Ha-Rim; Oh, Sung-Tag [Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 139-743 (Korea, Republic of); Kim, Chang Yeoul [Future Convergence Ceramic Division, Korea Institute Ceramic Engineering and Technology (KICET), Seoul 233-5 (Korea, Republic of); Baek, Seong-Ho [Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Park, Il-Kyu, E-mail: ikpark@ynu.ac.kr [Department of Electronic Engineering, Yeungnam University, Gyeongbuk 712-749 (Korea, Republic of); Ahn, Hyo-Jin, E-mail: hjahn@seoultech.ac.kr [Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 139-743 (Korea, Republic of)

    2014-12-05

    Highlights: • Al-doped ZnO/Ag transparent conductive electrode is fabricated at low temperature. • Performance of the hybrid transparent conductive electrode affected by the structure. • The performance enhancement mechanism is suggested. - Abstract: Al-doped ZnO (AZO)/Ag grid hybrid transparent conductive electrode (TCE) structures were fabricated at a low temperature by using electrohydrodynamic jet printing for the Ag grids and atomic layer deposition for the AZO layers. The structural investigations showed that the AZO/Ag grid hybrid structures consisted of Ag grid lines formed by Ag particles and the AZO layer covering the inter-spacing between the Ag grid lines. The Ag particles comprising the Ag grid lines were also capped by thin AZO layers, and the coverage of the AZO layers was increased with increasing the thickness of the AZO layer. Using the optimum thickness of AZO layer of 70 nm, the hybrid TCE structure showed an electrical resistivity of 5.45 × 10{sup −5} Ω cm, an optical transmittance of 80.80%, and a figure of merit value of 1.41 × 10{sup −2} Ω{sup −1}. The performance enhancement was suggested based on the microstructural investigations on the AZO/Ag grid hybrid structures.

  14. Synthesis and annealing study of RF sputtered ZnO thin film

    Science.gov (United States)

    Singh, Shushant Kumar; Sharma, Himanshu; Singhal, R.; Kumar, V. V. Siva; Avasthi, D. K.

    2016-05-01

    In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structure of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.

  15. Analysis of Li-related defects in ZnO thin films influenced by annealing ambient

    Indian Academy of Sciences (India)

    Bing Wang; Lidan Tang

    2014-02-01

    Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and in situ annealing under O2 or Ar ambient. Li-related defects in ZnO films strongly depend on the annealing ambient. AFM and XRD indicated that ZnO films possessed a good crystallinity with -axis orientation, uniform thickness and dense surface. Electrical and optical properties demonstrated that, an amount of LiZn defect had existed in ZnO annealed under O2 ambient and an amount of Lii(o) defect had existed in ZnO annealed under Ar ambient. First-principle calculations were performed to calculate formation energies of Li-doped ZnO in order to explain the formation mechanism of Li-related defects in ZnO.

  16. Polyelectrolyte assisted preparation and characterization of nanostructured ZnO thin films

    OpenAIRE

    Jia, Shijun

    2005-01-01

    The present work focuses on the synthesis and characterization of nanostructured ZnO thin films onto silicon wafers modified by self-assembled-monolayers (SAMs) via chemical bath deposition (CBD). Two precursor solutions were designed and used for the film deposition, in which two different polymers were introduced respectively to control the growth of the ZnO colloidal particles in solution. ZnO films were deposited from an aqueous solution containing zinc salt and hexamethylenetetramine ...

  17. Laser nanostructuring of ZnO thin films

    Science.gov (United States)

    Nedyalkov, N.; Koleva, M.; Nikov, R.; Atanasov, P.; Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M.

    2016-06-01

    In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.

  18. Direct current magnetron sputter-deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoon, Jian-Wei [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chan, Kah-Yoong, E-mail: kychan@mmu.edu.my [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Krishnasamy, Jegenathan; Tou, Teck-Yong [Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Knipp, Dietmar [School of Engineering and Science, Jacobs University Bremen, 28759 Bremen (Germany)

    2011-01-15

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  19. Frist principles study of effect of high Al doping concentration of p-type ZnO on electric conductivity performance%Al高掺杂浓度对ZnO导电性能影响的第一性原理研究

    Institute of Scientific and Technical Information of China (English)

    侯清玉; 赵春旺; 李继军; 王钢

    2011-01-01

    We optimize the geometric structure and calculate total densities of states, band structures, the relative number of electrons and mobility ratios of electrons of ZnO mode established at different concentrations of Al, in the condition of high concentration of Al heavily doped ZnO semiconductor at low temperature, by adopting the ab-initio study of plane wave ultra-soft pseudo potential technique based on the density function theory (DFT). It is found that the relative number of electrons increases, but the mobility ratio of electrons of ZnO decreases, with the concentration of Al increasing. On the contrary, the lower the Al doping concentration, the stronger the conductivity of ZnOis. The conductivity is compared. We can draw a conclusion that the conductivity of ZnO semiconductor decreases with A1 doping concentration increasing. The calculation results are consistent with the change trend of experiments with Al concentrations exceeding o. z, i. e. , x ≥ 0. 02.%采用密度泛函理论框架下的第一性原理平面波超软赝势方法,在同等环境条件下,建立了未掺杂和三种不同浓度的Al原子取代Zn原子的Zn1-xAlxO模型,然后分别对模型进行了几何结构优化、总态密度分布和能带分布的计算.结果表明:ZnO高掺杂Al的条件下,随掺杂Al原子浓度增大,进入导带的电子增多,电子迁移率减小,电导率减小,导电性能减弱;但是随高掺杂Al的浓度减小,反而使电子迁移率增大,电导率增大,导电性能增强.计算得到的结果与实验中Al原子掺杂浓度x≥0.02的变化趋势相一致.

  20. Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H-SiC photoconductive switches

    Institute of Scientific and Technical Information of China (English)

    周天宇; 刘学超; 黄维; 代冲冲; 郑燕青; 施尔畏

    2015-01-01

    Al-doped ZnO thin film (AZO) is used as a subcontact layer in 6H–SiC photoconductive semiconductor switches (PCSSs) to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the on-state resistance of lateral PCSS with an n+-AZO subcontact layer is 14.7%lower than that of PCSS without an n+-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials.

  1. Defects Induced Room Temperature Ferromagnetism in ZnO Thin Films

    OpenAIRE

    Xiao Zhang; , Wei Zhang; Xinghua Zhang; Xuewen Xu; Fanbin Meng; Tang, C.C.

    2014-01-01

    Polycrystalline ZnO thin films are prepared by the co-sputtering method under different oxygen partial pressures. Films deposited in pure argon gas exhibit ferromagnetism, whereas other films deposited under different oxygen partial pressures are diamagnetism. XPS results show the presence of Zn interstitial and oxygen vacancy in all of samples. Further analysis indicates that Zn interstitial may play an important role in triggering magnetic order on the undoped ZnO thin films by inducing an ...

  2. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    Directory of Open Access Journals (Sweden)

    Shao-Ying Ting

    2012-01-01

    Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

  3. Surface Engineering of ZnO Thin Film for High Efficiency Planar Perovskite Solar Cells

    OpenAIRE

    Zong-Liang Tseng; Chien-Hung Chiang; Chun-Guey Wu

    2015-01-01

    Sputtering made ZnO thin film was used as an electron-transport layer in a regular planar perovskite solar cell based on high quality CH3NH3PbI3 absorber prepared with a two-step spin-coating. An efficiency up to 15.9% under AM 1.5G irradiation is achieved for the cell based on ZnO film fabricated under Ar working gas. The atmosphere of the sputtering chamber can tune the surface electronic properties (band structure) of the resulting ZnO thin film and therefore the photovoltaic performance o...

  4. Recent advances in ZnO nanostructures and thin films for biosensor applications: Review

    International Nuclear Information System (INIS)

    Graphical abstract: ZnO nanostructures have shown binding of biomolecules in desired orientation with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, their compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes them suitable candidate for future small integrated biosensor devices. This review highlights various approaches to synthesize ZnO nanostructures and thin films, and their applications in biosensor technology. Highlights: ► This review highlights various approaches to synthesize ZnO nanostructures and thin films. ► Article highlights the importance of ZnO nanostructures as biosensor matrix. ► Article highlights the advances in various biosensors based on ZnO nanostructures. ► Article describes the potential of ZnO based biosensor for new generation healthcare devices. - Abstract: Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO nanostructures suitable candidate for future small integrated biosensor devices. This review

  5. Enhanced the photocatalytic activity of Ni-doped ZnO thin films: Morphological, optical and XPS analysis

    Science.gov (United States)

    Abdel-wahab, M. Sh.; Jilani, Asim; Yahia, I. S.; Al-Ghamdi, Attieh A.

    2016-06-01

    Pure and Ni-doped ZnO thin films with different concentration of Ni (3.5 wt%, 5 wt%, 7 wt%) were prepared by DC/RF magnetron sputtering technique. The X-rays diffraction pattern showed the polycrystalline nature of pure and Ni-doped ZnO thin films. The surface morphology of pure and Ni doped ZnO thin films were investigated through atomic force microscope, which indicated the increase in the grain dimension and surface roughness with increasing the Ni doping. The UV-Visible transmission spectra showed the decrease in the transmittance of doped ZnO thin films with the incorporation of Ni dopants. The surface and chemical state analysis of pure and Ni doped ZnO thin films were investigated by X-rays photoelectron spectroscopy (XPS). The photocatalytic activities were evaluated by an aqueous solution of methyl green dye. The tungsten lamp of 500 W was used as a source of visible light for photocatalytic study. The degradation results showed that the Ni-doped ZnO thin films exhibit highly enhanced photocatalytic activity as compared to the pure ZnO thin films. The enhanced photocatalytic activities of Ni-doped ZnO thin films were attributed to the enhanced surface area (surface defects), surface roughness and decreasing the band gap of Ni-doped ZnO thin films. Our work supports the applications of thin film metal oxides in waste water treatment.

  6. Effect of silver growth temperature on the contacts between Ag and ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures,200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150 ℃ and 200℃. Ohmic contacts were formed while the growth temperatures were lower than 150℃ or higher than 200 ℃. After analysis,the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers.

  7. Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Sadananda Kumar, N., E-mail: sadanthara@gmail.com; Bangera, Kasturi V.; Shivakumar, G. K. [National Institute of Technology Karnataka, Surathkal, Thin Films Laboratory, Department of Physics (India)

    2015-07-15

    Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.

  8. Superhydrophobic Ag decorated ZnO nanostructured thin film as effective surface enhanced Raman scattering substrates

    Science.gov (United States)

    Jayram, Naidu Dhanpal; Sonia, S.; Poongodi, S.; Kumar, P. Suresh; Masuda, Yoshitake; Mangalaraj, D.; Ponpandian, N.; Viswanathan, C.

    2015-11-01

    The present work is an attempt to overcome the challenges in the fabrication of super hydrophobic silver decorated zinc oxide (ZnO) nanostructure thin films via thermal evaporation process. The ZnO nanowire thin films are prepared without any surface modification and show super hydrophobic nature with a contact angle of 163°. Silver is further deposited onto the ZnO nanowire to obtain nanoworm morphology. Silver decorated ZnO (Ag@ZnO) thin films are used as substrates for surface enhanced Raman spectroscopy (SERS) studies. The formation of randomly arranged nanowire and silver decorated nanoworm structure is confirmed using FESEM, HR-TEM and AFM analysis. Crystallinity and existence of Ag on ZnO are confirmed using XRD and XPS studies. A detailed growth mechanism is discussed for the formation of the nanowires from nanobeads based on various deposition times. The prepared SERS substrate reveals a reproducible enhancement of 3.082 × 107 M for Rhodamine 6G dye (R6G) for 10-10 molar concentration per liter. A higher order of SERS spectra is obtained for a contact angle of 155°. Thus the obtained thin films show the superhydrophobic nature with a highly enhanced Raman spectrum and act as SERS substrates. The present nanoworm morphology shows a new pathway for the construction of semiconductor thin films for plasmonic studies and challenges the orderly arranged ZnO nanorods, wires and other nano structure substrates used in SERS studies.

  9. Textured ZnO thin films by RF magnetron sputtering

    CERN Document Server

    Ginting, M; Kang, K H; Kim, S K; Yoon, K H; Park, I J; Song, J S

    1999-01-01

    Textured thin films ZnO has been successfully grown by rf magnetron sputtering method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The grain size of the textured surface is highly dependent on the argon pressure during the deposition. The pressure in this experiment was varied from 50 mTorr down to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmittance of the films are more than 85% in the wavelength of 400 to 800 nm, and haze ratio of about 14% is obtained at 400 nm wavelength. Beside the textured surface, these films also have very low resistivity, which is lower than 1.4x10 sup - sup 3 OMEGA centre dot cm. X-ray analysis shows that the films with textured surface have four diffraction peaks on the direction of (110), (002), (101) and (112), while the non-textured films have only (110) and (002) peaks. Due to the excellent characteristics of this film, it will make the film very good TCO alternatives for the ...

  10. Cytotoxic evaluation of nanostructured zinc oxide (ZnO) thin films and leachates.

    Science.gov (United States)

    Petrochenko, Peter E; Zhang, Qin; Bayati, Reza; Skoog, Shelby A; Phillips, K Scott; Kumar, Girish; Narayan, Roger J; Goering, Peter L

    2014-09-01

    Nanostructured ZnO films have potential use as coatings on medical devices and food packaging due to their antimicrobial and UV-protection properties. However, their influence on mammalian cells during clinical use is not fully understood. This study investigated the potential cytotoxicity of ZnO thin films in RAW 264.7 macrophages. ZnO thin films (∼96nm thick with a 50nm grain) were deposited onto silicon wafers using pulsed laser deposition. Cells grown directly on ZnO thin film coatings exhibited less toxicity than cells exposed to extracts of the coatings. Cells on ZnO thin films exhibited a 43% and 68% decrease in cell viability using the MTT and 7-AAD/Annexin V flow cytometry assays, respectively, after a 24-h exposure as compared to controls. Undiluted 100% 24- and 48-h extracts decreased viability by 89%, increased cell death by LDH release to 76% 24h after treatment, and increased ROS after 5-24h of exposure. In contrast, no cytotoxicity or ROS were observed for 25% and 50% extracts, indicating a tolerable concentration. Roughly 24 and 34μg/m(2) Zn leached off the surfaces after 24 and 48h of incubation, respectively. ZnO coatings may produce gradual ion release which becomes toxic after a certain level and should be evaluated using both direct exposure and extraction methods. PMID:24878115

  11. Investigation of thin ZnO layers in view of laser desorption-ionization

    Science.gov (United States)

    Grechnikov, A. A.; Georgieva, V. B.; Alimpiev, S. S.; Borodkov, A. S.; Nikiforov, S. M.; Simanovsky, Ya O.; Dimova-Malinovska, D.; Angelov, O. I.

    2010-04-01

    Thin zinc oxide films (ZnO) were developed as a matrix-free platform for surface assisted laser desorption-ionization (SALDI) time-of-flight mass spectrometry. The ZnO films were deposited by RF magnetron sputtering of ZnO ceramic targets in Ar atmospheres on monocrystalline silicon. The generation under UV (355 nm) laser irradiation of positive ions of atenolol, reserpine and gramicidin S from the ZnO layers deposited was studied. All analytes tested were detected as protonated molecules with no or very structure-specific fragmentation. The mass spectra obtained showed low levels of chemical background noise. All ZnO films studied exhibited high stability and good reproducibility. The detection limits for test analytes are in the 10 femtomol range.

  12. Investigations of ZnO thin films deposited by a reactive pulsed laser ablation

    Institute of Scientific and Technical Information of China (English)

    Y.; C.; SOO; H.; KANDEL; M.; A.; THOMAS; C.; P.; DAGHLIAN

    2009-01-01

    Highly transparent ZnO thin films were deposited at different substrate temperatures by pulsed laser deposition in an oxygen atmosphere. The thin films were characterized by various techniques including X-ray diffraction, scanning electron microscopy, optical absorption, and photoluminescence. We demonstrated that oriented wurtzite ZnO thin films could be deposited at room temperature using a high purity zinc target. Variable temperature photoluminescence revealed new characteristics in the band edge emission. The underlying mechanism for the observed phenomena was also discussed.

  13. Fabrication of superhydrophobic surface of hierarchical ZnO thin films by using stearic acid

    Science.gov (United States)

    Wang, Yanfen; Li, Benxia; Xu, Chuyang

    2012-01-01

    Flower-like hierarchical ZnO microspheres were successfully synthesized by a simple, template-free, and low-temperature aqueous solution route. The morphology and microstructure of the ZnO microspheres were examined by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The bionic films with hydrophobicity were fabricated by the hierarchical ZnO microspheres modified by stearic acid. It was found that the hydrophobicity of the thin films was very sensitive to the added amount of stearic acid. The thin films modified with 8% stearic acid took on strong superhydrophobicity with a water contact angle (CA) almost to be 178° and weak adhersion. The remarkable superhydrophobicity could be attributed to the synergistic effect of micro/nano hierarchical structure of ZnO and low surface energy of stearic acid.

  14. Ultrafast dynamics of ZnO and ZnO-BaTiO3 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Acharya, Snigdhatanu; Chouthe, Sumedha; Seifert, Gerhard [Institute of Physics, Martin-Luther-University, Halle-Wittenberg, Von-Danckelmann Platz 3, D-06120, Halle (Germany); Boentgen, Tammo; Schmidt-Grund, Ruediger; Grundmann, Marius [Institute for Experimental Physics-II, University of Leipzig, Linnestrasse 5, D-04103 Leipzig (Germany)

    2011-07-01

    Femtosecond pump-probe spectroscopy was performed at room temperature on ZnO thin film and a double layer thin film structure of BaTiO{sub 3}/ZnO, to investigate coupling between the layers via the charge carrier dynamics. Frequency-doubled Ti:Sa laser pulses (150 fs, 400 nm) were used as pump; induced transmission changes were probed by supercontinuum (320-600 nm) fs pulses. For ZnO, two photon absorption as well as direct excitation to the trap states close to the conduction band edge leads to transfer of carriers to the conduction band. The displaced carriers relax rapidly to the bottom of conduction band, and bleaching at 375 nm attributed to population of discrete exciton A is observed. Further increase in the density at exciton levels lead to a stimulated emission at 390 nm due to exciton-exciton scattering. Changes in refractive index induced by pump-pulse generates interferometric transmission changes between 400-600 nm. Similar contributions to the transient spectra are observed in BaTiO{sub 3}/ZnO. BaTiO{sub 3} does not show any femtosecond response. Difference in the dynamical behaviour of the contributions in ZnO and BaTiO{sub 3}/ZnO gives an indication of coupling between ZnO and BaTiO{sub 3}.

  15. Effects of Mn doping on electrical properties of ZnO thin films

    Science.gov (United States)

    Motevalizadeh, Leili; Shohany, Boshra Ghanbari; Abrishami, Majid Ebrahimizadeh

    2016-01-01

    In this paper, we have investigated the effect of Mn doping on the electrical properties of ZnO thin films. ZnO thin films with different amounts of Mn concentrations (0, 5, 10 and 15 mol.%) were prepared by spray pyrolysis technique. The crystal structure was examined by X-ray diffraction (XRD) analysis. XRD patterns showed that all the samples were crystallized in wurtzite structure while a decrease in crystallinity and switch in preferential orientations were observed in Mn-doped thin films comparing to undoped ZnO. The element composition of all thin films was detected by energy dispersive X-ray (EDX). The surface morphology of the films was investigated using field emission scanning electron microscope (FESEM) and optical properties were studied using UV-vis spectroscopy. UV-vis study revealed that the band gap blueshifts with the increase in Mn content and Eg increases with the increase in Mn concentration. The resistivity and activation energy were measured at room temperature and ranging from 373 K to 573 K. Comparing to undoped ZnO thin film, the resistivity of Mn-doped ZnO films increased because of different parameters such as increasing barrier height energy and reducing the oxygen deficiency.

  16. Laser molecular beam epitaxy of ZnO thin films and heterostructures

    OpenAIRE

    Opel, Matthias; Geprägs, Stephan; Althammer, Matthias; Brenninger, Thomas; Gross, Rudolf

    2013-01-01

    We report on the growth of epitaxial ZnO thin films and ZnO based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultra-violet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser flu...

  17. Strong adsorption of Al-doped carbon nanotubes toward cisplatin

    Science.gov (United States)

    Li, Wei; Li, Guo-Qing; Lu, Xiao-Min; Ma, Juan-Juan; Zeng, Peng-Yu; He, Qin-Yu; Wang, Yin-Zhen

    2016-08-01

    The adsorption of cisplatin molecule on Al-doped CNTs is investigated using density functional theory. The obtained results indicate that Al-doped carbon nanotubes can strongly absorb cisplatin. After absorbing cisplatin, the symmetry of CNTs has some changes. We innovatively defined a parameter of symmetry variation which relates to the adsorption. By analyzing the electronic structure, it can be concluded that under the circumstance that cisplatin was absorbed by Al-doped CNTs through aluminum atom of Al-doped CNTs. In conclusion, Al-doped CNTs is a kind of potential delivery carrier with high quality for anticancer drug cisplatin.

  18. Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

    Institute of Scientific and Technical Information of China (English)

    HE YongNing; ZHANG JingWen; YANG XiaoDong; XU QingAn; ZHU ChangChun; HOU Xun

    2007-01-01

    ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

  19. Schottky Junction Methane Sensors Using Electrochemically Grown Nanocrystalline-Nanoporous ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    P. K. Basu

    2009-01-01

    Full Text Available Nanocrystalline-nanoporous ZnO thin films were prepared by an electrochemical anodization method, and the films were tested as methane sensors. It was found that Pd-Ag catalytic contacts showed better sensing performance compared to other noble metal contacts like Pt and Rh. The methane sensing temperature could be reduced to as low as 100∘C by sensitizing nanocrystalline ZnO thin films with Pd, deposited by chemical method. The sensing mechanism has been discussed briefly.

  20. Preparation of ZnO Thin Films on Free-Standing Diamond Substrates

    International Nuclear Information System (INIS)

    Highly c-axis-oriented ZnO films were deposited successfully on the nucleation sides of free-standing diamond (FD) films by the direct current (DC) magnetron sputtering method. The effect of the sputtering parameters, such as power, gas pressure and sputtering plasma composition of Ar-to-O2, on the properties of ZnO thin films was investigated in detail. X-ray diffraction (XRD) measurements showed that, at a sputtering power of 200 W, gas pressure of 0.5 Pa and an Ar-to-O2 composition of 1:1, a higher intensity of the (002) diffraction peak and a narrower full width at half maximum (FWHM) were detected which meant high c-axis orientation and high quality of the ZnO films. To improve the quality of the ZnO film, a thin ZnO layer was pre-grown as a homo-buffer layer. XRD measurements showed that this buffer layer had a beneficial effect on the structural and morphological properties of the post-grown ZnO film. (low temperature plasma)

  1. Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

    Institute of Scientific and Technical Information of China (English)

    LI Shao-Juan; HE Xin; HAN De-Dong; SUN Lei; WANG Yi; HAN Ru-Qi; CHAN Man-Sun; ZHANG Sheng-Dong

    2012-01-01

    The structural and electrical properties of ZnO 61ms deposited by reactive radiofrequency sputtering with a metallic zinc target are systematically investigated. While the as-deposited ZnO film is in a poly-crystalline structure when the partial pressure of oxygen (pO2) is low, the grain size abruptly decreases to a few nanometers as pO2 increases to a criticaJ vaiue, and then becomes almost unchanged with a further increase in pO2.In addition, the resistivity of the ZnO films shows a non-monotonic dependence on pO2, including an abrupt transition of about seven orders of magnitude at the critical pO2. Thin-film transistors (TFTs) with the nanocrystalline ZnO films as channel layers have an on/off current ratio of more than 107, an off-current in the order of pA, a threshold voltage of about 4.5 V, and a carrier mobility of about 2cm2/(V-s). The results show that radiofrequency sputtered ZnO with a zinc target is a promising candidate for high-performance ZnO TFTs.%The structural and electrical properties of ZnO films deposited by reactive radiofrequency sputtering with a metallic zinc target are systematically investigated.While the as-deposited ZnO film is in a poly-crystalline structure when the partial pressure of oxygen (pO2 ) is low,the grain size abruptly decreases to a few nanometers as pO2 increases to a critical value,and then becomes almost unchanged with a further increase in pO2.In addition,the resistivity of the ZnO films shows a non-monotonic dependence on pO2,including an abrupt transition of about seven orders of magnitude at the critical pO2.Thin-film transistors (TFTs) with the nanocrystalline ZnO films as channel layers have an on/off current ratio of more than 10 7,an off-current in the order of pA,a threshold voltage of about 4.5 V,and a carrier mobility of about 2 cm2/(V.s).The results show that radiofrequency sputtered ZnO with a zinc target is a promising candidate for high-performance ZnO TFTs.

  2. Structural, electronic and magnetic properties of Er implanted ZnO thin films

    Science.gov (United States)

    Murmu, P. P.; Kennedy, J.; Ruck, B. J.; Leveneur, J.

    2015-09-01

    We report the structural, electronic and magnetic properties of Er implanted and annealed ZnO thin films. The effect of annealing in oxygen-deficient and oxygen-rich conditions was investigated. Rutherford backscattering spectrometry results revealed that the Er atoms are located at the implantation depth of around 13 nm, and annealing conditions had no adverse effect on the Er concentration in the layer. Raman spectroscopy results showed peak related to E2(high) mode of ZnO indicating enhanced crystalline quality of the Er implanted and annealed ZnO films. X-ray absorption near edge spectroscopy results demonstrated pre-edge features in O K-edge which are attributed to the structural defects in the films. Room temperature magnetic ordering was observed in Er implanted and annealed films, and is mainly assigned to the intrinsic defects in ZnO.

  3. Structural, electronic and magnetic properties of Er implanted ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Murmu, P.P. [National Isotope Centre, GNS Science, PO Box 31312, Lower Hutt 5010 (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology, PO Box 600, Wellington 6140 (New Zealand); Kennedy, J., E-mail: J.Kennedy@gns.cri.nz [National Isotope Centre, GNS Science, PO Box 31312, Lower Hutt 5010 (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology, PO Box 600, Wellington 6140 (New Zealand); Ruck, B.J. [The MacDiarmid Institute for Advanced Materials and Nanotechnology, PO Box 600, Wellington 6140 (New Zealand); Leveneur, J. [National Isotope Centre, GNS Science, PO Box 31312, Lower Hutt 5010 (New Zealand)

    2015-09-15

    We report the structural, electronic and magnetic properties of Er implanted and annealed ZnO thin films. The effect of annealing in oxygen-deficient and oxygen-rich conditions was investigated. Rutherford backscattering spectrometry results revealed that the Er atoms are located at the implantation depth of around 13 nm, and annealing conditions had no adverse effect on the Er concentration in the layer. Raman spectroscopy results showed peak related to E{sub 2}(high) mode of ZnO indicating enhanced crystalline quality of the Er implanted and annealed ZnO films. X-ray absorption near edge spectroscopy results demonstrated pre-edge features in O K-edge which are attributed to the structural defects in the films. Room temperature magnetic ordering was observed in Er implanted and annealed films, and is mainly assigned to the intrinsic defects in ZnO.

  4. Structural, electronic and magnetic properties of Er implanted ZnO thin films

    International Nuclear Information System (INIS)

    We report the structural, electronic and magnetic properties of Er implanted and annealed ZnO thin films. The effect of annealing in oxygen-deficient and oxygen-rich conditions was investigated. Rutherford backscattering spectrometry results revealed that the Er atoms are located at the implantation depth of around 13 nm, and annealing conditions had no adverse effect on the Er concentration in the layer. Raman spectroscopy results showed peak related to E2(high) mode of ZnO indicating enhanced crystalline quality of the Er implanted and annealed ZnO films. X-ray absorption near edge spectroscopy results demonstrated pre-edge features in O K-edge which are attributed to the structural defects in the films. Room temperature magnetic ordering was observed in Er implanted and annealed films, and is mainly assigned to the intrinsic defects in ZnO

  5. Random lasing of ZnO thin films grown by pulsed-laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cachoncinlle, C., E-mail: christophe.cachoncinlle@univ-orleans.fr [GREMI, UMR 7344 CNRS—Université Orléans, 45067 Orléans Cedex 2 (France); Hebert, C.; Perrière, J. [Sorbonne Universités, UPMC Université Paris 06, UMR 7588, INSP, 75005 Paris (France); CNRS, UMR 7588, INSP, 75005 Paris (France); Nistor, M. [NILPRP, L 22 PO Box. MG-36, 77125 Bucharest—Magurele (Romania); Petit, A.; Millon, E. [GREMI, UMR 7344 CNRS—Université Orléans, 45067 Orléans Cedex 2 (France)

    2015-05-01

    Highlights: • Random lasing at RT in nanocrystalline ZnO PLD thin film (<100 nm). • Low optical pumping threshold (<30 kW cm{sup −2}) for UV random lasing. • Random lasing interpreted by the electron-hole plasma (EHP) model. - Abstract: Low-dimensional semiconductor structures on nanometer scale are of great interest because of their strong potential applications in nanotechnologies. We report here optical and structural properties on UV lasing in ZnO thin films. The ZnO films, 110 nm thick, were prepared using pulsed-laser deposition on c-cut sapphire substrates at 500 °C under 10{sup −2} oxygen pressure. The ZnO films are nearly stoichiometric, dense and display the wurtzite phase. The films are highly textured along the ZnO c-axis and are constituted of nanocrystallites. According to Hall measurements these films are conductive (0.11 Ω cm). Photoluminescence measurements reveals a so-called random lasing in the range 390 to 410 nm, when illuminating at 355 nm with a tripled frequency pulsed Nd-YAG laser. Such random lasing is obtained at rather low optical pumping, 45 kW cm{sup −2}, a value lower than those classically reported for pulsed-laser deposition thin films.

  6. Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    ZnO,as a wide-band gap semiconductor,has recently become a new research fo-cus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy(L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition(PLD) . Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond(ns) pulsed laser abla-tion of ZnO ceramic target,the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

  7. Effect of hydrogen doping in ZnO thin films by pulsed DC magnetron sputtering

    International Nuclear Information System (INIS)

    This study examined the role of hydrogen impurities in highly oriented ZnO thin films. Hydrogen intentionally incorporated was found to play an important role as a donor in n-type conduction, improving the free carrier concentration. The increase in the conductivity of ZnO thin films was attributed to the two centers assigned to isolated hydrogen atoms in the anti-bonding sites as well as bond-centered interstitial hydrogen located between the Zn-O bonds and Zn vacancy passivated by one or two hydrogen atoms. Micro Raman spectroscopy showed two additional modes at approximately 501 and 573 cm-1. These two peaks were attributed to damage to the crystal lattice, which could be explained by the optical-phonon branch at the zone boundary and host lattice defects, such as vacancy clusters, respectively.

  8. Structural characterization of supported nanocrystalline ZnO thin films prepared by dip-coating

    Energy Technology Data Exchange (ETDEWEB)

    Casanova, J.R. [CITEDEF-CINSO-CONICET Centro de Investigaciones en Solidos, Juan B. de La Salle 4397, B1603ALO, Villa Martelli, Buenos Aires (Argentina); Heredia, E.A., E-mail: eheredia@citedef.gob.ar [CITEDEF-CINSO-CONICET Centro de Investigaciones en Solidos, Juan B. de La Salle 4397, B1603ALO, Villa Martelli, Buenos Aires (Argentina); Bojorge, C.D.; Canepa, H.R. [CITEDEF-CINSO-CONICET Centro de Investigaciones en Solidos, Juan B. de La Salle 4397, B1603ALO, Villa Martelli, Buenos Aires (Argentina); Kellermann, G. [Departamento de Fisica, Universidade Federal do Parana, Curitiba, PR (Brazil); Craievich, A.F. [Instituto de Fisica, Universidade de Sao Paulo, Cidade Universitaria, Sao Paulo, SP (Brazil)

    2011-09-15

    Nanocrystalline ZnO thin films prepared by the sol-gel dip-coating technique were characterized by grazing incidence X-ray diffraction (GIXD), atomic force microscopy (AFM), X-ray reflectivity (XR) and grazing incidence small-angle X-ray scattering (GISAXS). The structures of several thin films subjected to (i) isochronous annealing at 350, 450 and 550 deg. C, and (ii) isothermal annealing at 450 deg. C during different time periods, were characterized. The studied thin films are composed of ZnO nanocrystals as revealed by analysing several GIXD patterns, from which their average sizes were determined. Thin film thickness and roughness were determined from quantitative analyses of AFM images and XR patterns. The analysis of XR patterns also yielded the average density of the studied films. Our GISAXS study indicates that the studied ZnO thin films contain nanopores with an ellipsoidal shape, and flattened along the direction normal to the substrate surface. The thin film annealed at the highest temperature, T = 550 deg. C, exhibits higher density and lower thickness and nanoporosity volume fraction, than those annealed at 350 and 450 deg. C. These results indicate that thermal annealing at the highest temperature (550 deg. C) induces a noticeable compaction effect on the structure of the studied thin films.

  9. Nanostructured ZnO thin films prepared by sol–gel spin-coating

    Energy Technology Data Exchange (ETDEWEB)

    Heredia, E., E-mail: heredia.edu@gmail.com [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Bojorge, C.; Casanova, J.; Cánepa, H. [UNIDEF (CONICET-MINDEF), J.B. de La Salle 4397, 1603 Villa Martelli, Pcia. de Buenos Aires (Argentina); Craievich, A. [Instituto de Física, Universidade de São Paulo, Cidade Universitária, 66318 São Paulo, SP (Brazil); Kellermann, G. [Universidade Federal do Paraná, 19044 Paraná (Brazil)

    2014-10-30

    Highlights: • ZnO films synthesized by sol–gel were deposited by spin-coating on flat substrates. • Structural features of ZnO films with several thicknesses were characterized by means of different techniques. • The thicknesses of different ZnO thin films were determined by means of FESEM and AFM. • The nanoporous structures of ZnO thin films were characterized by GISAXS using IsGISAXS software. • The average densities of ZnO thin films were derived from (i) the critical angle in 1D XR patterns, (ii) the angle of Yoneda peak in 2D GISAXS images, (iii) minimization of chi2 using IsGISAXS best fitting procedure. - Abstract: ZnO thin films deposited on silica flat plates were prepared by spin-coating and studied by applying several techniques for structural characterization. The films were prepared by depositing different numbers of layers, each deposition being followed by a thermal treatment at 200 °C to dry and consolidate the successive layers. After depositing all layers, a final thermal treatment at 450 °C during 3 h was also applied in order to eliminate organic components and to promote the crystallization of the thin films. The total thickness of the multilayered films – ranging from 40 nm up to 150 nm – was determined by AFM and FESEM. The analysis by GIXD showed that the thin films are composed of ZnO crystallites with an average diameter of 25 nm circa. XR results demonstrated that the thin films also exhibit a large volume fraction of nanoporosity, typically 30–40 vol.% in thin films having thicknesses larger than ∼70 nm. GISAXS measurements showed that the experimental scattering intensity is well described by a structural model composed of nanopores with shape of oblate spheroids, height/diameter aspect ratio within the 0.8–0.9 range and average diameter along the sample surface plane in the 5–7 nm range.

  10. Superhydrophobic nanostructured ZnO thin films on aluminum alloy substrates by electrophoretic deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Ying; Sarkar, D.K., E-mail: dsarkar@uqac.ca; Chen, X-Grant

    2015-02-01

    Graphical abstract: - Highlights: • Fabrication of superhydrophobic ZnO thin films surfaces by electrophoretic deposition process on aluminum substrates. • Effect of bath temperature on the physical and superhydrophobic properties of thin films. • The water contact angle of 155° ± 3 with roll off property has been observed on the film that was grown at bath temperatures of 50 °C. • The activation energy for electrophoretic deposition of SA-functionalized ZnO nanoparticle is calculated to be 0.50 eV. - Abstract: Superhydrophobic thin films have been fabricated on aluminum alloy substrates by electrophoretic deposition (EPD) process using stearic acid (SA) functionalized zinc oxide (ZnO) nanoparticles suspension in alcohols at varying bath temperatures. The deposited thin films have been characterized using both X-ray diffraction (XRD) and infrared (IR) spectroscopy and it is found that the films contain low surface energy zinc stearate and ZnO nanoparticles. It is also observed that the atomic percentage of Zn and O, roughness and water contact angle of the thin films increase with the increase of the deposited bath temperature. Furthermore, the thin film deposited at 50 °C, having a roughness of 4.54 ± 0.23 μm, shows superhydrophobic properties providing a water contact angle of 155 ± 3° with rolling off properties. Also, the activation energy of electrophoretic deposition of stearic-acid-functionalized ZnO nanoparticles is calculated to be 0.5 eV.

  11. Ti doped ZnO thin film based UV photodetector: Fabrication and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Shewale, P.S.; Lee, N.K.; Lee, S.H.; Kang, K.Y. [Convergence of IT Devices Institute, Dong-Eui University, Busan 614-714 (Korea, Republic of); Yu, Y.S., E-mail: ysyu@deu.ac.kr [Convergence of IT Devices Institute, Dong-Eui University, Busan 614-714 (Korea, Republic of); Department of Radiological Science, Dong-Eui University, Busan 614-714 (Korea, Republic of)

    2015-03-05

    Highlights: • UV photoconductive undoped and Ti doped ZnO films were grown by spray pyrolysis. • Ti doping effects on physical and UV detection properties of films were studied. • Samples are polycrystalline with a hexagonal wurtzite crystal structure. • Ti doping increases the optical transmittance and band gap of ZnO film. • Ti doping improves the responsivity of ZnO film based MSM UV photodetector. - Abstract: This paper presents the synthesis of undoped and 2 wt.% titanium (Ti) doped zinc oxide (ZnO) thin films onto glass substrates by chemical spray pyrolysis technique. Both films are deposited at 375 °C substrate temperature. The influence of Ti doping on structural, morphological, optical and UV detection properties of ZnO film was studied. Both films revealed to be of polycrystalline nature with a hexagonal wurtzite structure; and the ZnO film crystallinity improved on Ti doping. Surface morphological observations agreed well with structural results. The Ti incorporation in ZnO thin films were confirmed by an energy dispersive X-ray spectroscopic analysis (EDX). The Ti doping increased the optical transmittance (∼96% at 550) and band gap (∼3.2927 eV) of ZnO thin film. Further, the metal–semiconductor–metal (MSM) planar ultraviolet photodetectors (UV PDs) were fabricated from deposition of tin (Sn) contacts onto undoped and Ti doped ZnO films using e-beam evaporation technique. To investigate UV photodetection properties, the MSM devices were subjected to current–voltage (I–V) characteristics measurements of forward and reverse bias in dark and UV light conditions. The photocurrent and responsivity were measured as a function of optical power density and applied voltage, respectively. The reproducibility of the UV detection performance of MSM devices was ensured by constantly switching UV light on and off at regular time intervals. The Ti doped ZnO film based UV PD demonstrates highest responsivity of about 0.051 A/W upon 2 mW/cm{sup 2

  12. Homoepitaxial growth of ZnO thin film by pulsed laser deposition (PLD)

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Matthias; Wenckstern, Holger von; Hanisch, Christian; Hochmuth, Holger; Lorenz, Michael; Schmidt, Heidemarie; Grundmann, Marius [Universitaet Leipzig, Semiconductor Physics Group, Institut fuer ExperimentellePhysik II, Leipzig (Germany)

    2007-07-01

    In this work ZnO thin films have been deposited homoepitaxially by PLD on ZnO single crystals grown by the hydrothermal method (purchased from CrysTec GmbH). These wafers have first been investigated by atomic force microscopy (AFM) and were found to show significant surface roughness in the as-received state. Therefore a thermal annealing method has been applied to the wafers prior to thin film growth, in order to improve the surface properties. An overview of the changes during annealing will be presented along with information on the optimal conditions for thermal annealing. Structural, morphological, optical and electrical properties of the thin films grown homoepitaxially on these optimized wafers will be discussed with respect to the growth conditions. Comparisons to properties of thin films grown heteroepitaxially on sapphire (Al{sub 2}O{sub 3}) and SCAM (ScAlM{sub g}O{sub 4}) will be provided.

  13. Room temperature ferromagnetism in Cd-doped ZnO thin films through defect engineering

    Energy Technology Data Exchange (ETDEWEB)

    Debbichi, M., E-mail: mourad_fsm@yahoo.fr [Laboratoire de la matière condensée et nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Souissi, M. [College of Arts and Science Nayriya, Dammam University, 31441 Dammam (Saudi Arabia); Fouzri, A. [Laboratoire Physico-Chimie des Matériaux, Unité de Service Commun de Recherche ‘‘High Resolution X-ray Diffractometer’’, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Schmerber, G. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS) UMR 7504 CNRS-Université de Strasbourg, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France); Said, M. [Laboratoire de la matière condensée et nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Alouani, M. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS) UMR 7504 CNRS-Université de Strasbourg, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France)

    2014-06-15

    Highlights: • ZnO:Cd thin film grown on c-sapphire substrate by MOCVD method. • RTFM in ZnO:Cd thin film is detected by SQUID magnetometer measurement. • DFT theory is conducted to elucidate the mechanism of RTFM in Cd-doped ZnO. - Abstract: Room-temperature ferromagnetism is detected in undoped and cadmium-doped ZnO (ZnO:Cd) thin film grown on c-plane sapphire substrate by metal–organic chemical vapor deposition method. To elucidate the origin of ferromagnetism, a theoretical study based on density functional theory is conducted, focusing on the role of the neutral cation vacancy on the appearance of magnetism in Cd-doped ZnO thin film. The calculations revealed that Cd substitution at Zn sites contributes to the long-ranged ferromagnetism in ZnO by lowering the formation energy of Zn vacancies and thereby stabilizing Zn vacancies from which the magnetic moments originate.

  14. Development of novel control system to grow ZnO thin films by reactive evaporation

    Directory of Open Access Journals (Sweden)

    Gerardo Gordillo

    2016-07-01

    Full Text Available This work describes a novel system implemented to grow ZnO thin films by plasma assisted reactive evaporation with adequate properties to be used in the fabrication of photovoltaic devices with different architectures. The innovative aspect includes both an improved design of the reactor used to activate the chemical reaction that leads to the formation of the ZnO compound as an electronic system developed using the virtual instrumentation concept. ZnO thin films with excellent opto-electrical properties were prepared in a reproducible way, controlling the deposition system through a virtual instrument (VI with facilities to control the amount of evaporated zinc involved in the process that gives rise to the formation of ZnO, by means of the incorporation of PID (proportional integral differential and PWM (pulse width modulation control algorithms. The effectiveness and reliability of the developed system was verified by obtaining with good reproducibility thin films of n+-ZnO and i-ZnO grown sequentially in situ with thicknesses and resistivities suitable for use as window layers in chalcopyrite based thin film solar cells.

  15. Retracted: Study of the wettability of ZnO nanofilms

    Directory of Open Access Journals (Sweden)

    Ujjwal M Joshi

    2012-04-01

    Full Text Available Al-doped and un-doped ZnO thin films deposited on quartz substrates by the nebulized spray pyrolysis method were studied to investigate the wettability of the surface. The main objective of the present study was to investigate the wettability of ZnO thin film by changing the concentration of Al doping. Microstructure and water contact angles of the films were measured by scanning electron microscopy (SEM and using a contact angle goniometer. SEM studies revealed that the grain size within the film increases with the doping concentration. The contact angles were studied to see the effect of aluminum doping on the hydrophilicity of the film. ZnO films were found to be hydrophobic in nature. A good correlation was observed between the SEM micrographs and contact angle results. The nature of the film was found to change from being hydrophobic to hydrophilic after the treatment in low-pressure DC glow discharge plasma, which, however, was reversible with the storage time.

  16. Study of the wettability of ZnO nanofilms

    Science.gov (United States)

    Subedi, Deepak Prasad; Madhup, Dinesh Kumar; Sharma, Ashish; Joshi, Ujjwal Man; Huczko, Andrzej

    2012-04-01

    Al-doped and un-doped ZnO thin films deposited on quartz substrates by the nebulized spray pyrolysis method were studied to investigate the wettability of the surface. The main objective of the present study was to investigate the wettability of ZnO thin film by changing the concentration of Al doping. Microstructure and water contact angles of the films were measured by scanning electron microscopy (SEM) and using a contact angle goniometer. SEM studies revealed that the grain size within the film increases with the doping concentration. The contact angles were studied to see the effect of aluminum doping on the hydrophilicity of the film. ZnO films were found to be hydrophobic in nature. A good correlation was observed between the SEM micrographs and contact angle results. The nature of the film was found to change from being hydrophobic to hydrophilic after the treatment in low-pressure DC glow discharge plasma, which, however, was reversible with the storage time.

  17. Dopant-induced modifications in structural and optical properties of ZnO thin films prepared by PLD

    Science.gov (United States)

    Hashmi, Jaweria Z.; Siraj, K.; Naseem, S.; Shaukat, S.

    2016-09-01

    The objective of the present work is to study the effect of yttrium doping concentration on the microstructure and optical behavior of ZnO thin films, deposited by pulsed laser deposition on silicon (001) substrates. The microstructural analysis of doped ZnO thin films shows columnar growth of the ZnO (002) plane under tensile stress, confirmed by Raman shifts of the E2 (high) mode. The optical properties are investigated by using a spectroscopic ellipsometer. Undoped and yttrium-doped ZnO films show high transparency in the visible region, and the estimated optical band gap energy is randomly shifted in the range 2.93-3.1 eV by increasing the yttrium doping level. Yttrium doping in ZnO is limited, which means that at doping concentrations higher than 3 wt.% of yttrium, the structural and optical properties show a shift towards those of undoped ZnO.

  18. Heteroepitaxial growth of nonpolar Cu-doped ZnO thin film on MnS-buffered (100) Si substrate

    Science.gov (United States)

    Nakamura, Tatsuru; Nguyen, Nam; Nagata, Takahiro; Takahashi, Kenichiro; Ri, Sung-Gi; Ishibashi, Keiji; Suzuki, Setsu; Chikyow, Toyohiro

    2015-06-01

    The preparation of nonpolar ZnO and Cu-doped ZnO thin films on Si substrates was studied for the application to the fabrication of green-light-emitting diodes. The use of rocksalt MnS and wurtzite AlN as buffer layers is a key technology for achieving the heteroepitaxial growth of nonpolar ZnO thin film on a (100) Si substrate. X-ray diffraction and photoluminescence measurements revealed that deposition under a high oxygen partial pressure (∼1 Torr) can enhance the nonpolar crystallization of undoped ZnO, and can simultaneously suppress the formation of defects such as oxygen vacancies. These techniques can be also applied to the growth of Cu-doped ZnO. A room-temperature photoluminescence study revealed that nonpolar [11\\bar{2}0]-oriented Cu-doped ZnO film exhibits enhanced green emission owing to the doped Cu ions.

  19. Luminescence and structural properties of ZnO thin films annealing in air

    Energy Technology Data Exchange (ETDEWEB)

    Baca, R; Martinez, J [Centro de Investigacion de Dispositivos Semiconductores, BUAP, Puebla, Pue. C.P. 72570 (Mexico); Esparza, A [Centro de Ciencias Aplicadas y Desarrollo de TecnologIa - UNAM. C.P. 04510, Mexico D.F (Mexico); Kryshtab, T [Departamento de Ciencias de Materiales, ESFM - IPN, Mexico D.F (Mexico); Juarez, G; Solache, H; Andraca, J; Pena, R, E-mail: rbaca02006@yahoo.com.mx

    2010-02-15

    All ZnO thin films deposited on (001) silicon substrates by DC reactive magnetron sputtering were annealed in air atmosphere with different times at 800deg. C. The samples were studied by X-ray diffraction technique (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. XRD investigation showed that ZnO phase was hexagonal wurtzite structure growing along the (002) direction. The as grown ZnO films presented macrostrain and microstrain caused a shift of the line diffraction (002) and a broadening respectively. However after 1 hour annealing these strains disappear. The grain size of ZnO films increased with an increase of annealing time. The as-deposited reactive sputtering ZnO films resulted semi-insulating with poor PL response. After high temperature annealing in air, the crystallinity and the PL response considerably improved, but their semi-insulating property also increased. The PL spectra of the annealed samples showed well defined transitions close to the near-band-edge and a wide visible deep-level band emission (430-640 nm). The main interest of this work was to enhance the PL response and to identify the origin of deep-level luminescence bands. The AFM, PL and XRD results indicated that the ZnO films annealing have potential applications in optoelectronic devices.

  20. Characterization of ZnO thin films grown on various substrates by RF magnetron sputtering

    International Nuclear Information System (INIS)

    In this study we investigated properties of ZnO thin films deposited on both oxygen-containing substrates and a substrate without oxygen content at various O2/Ar reactant gas ratios. Deposition of ZnO on indium-tin oxide (ITO) resulted in the best crystallinity, whereas the least degree of crystallization was observed from ZnO deposited on glass. All the films were found to have compressive stress, which was relieved by annealing in O2 environment. ZnO films deposited on glass revealed p-type conductivity when prepared at O2/Ar ratio of 0.25 whereas those on SiNx yielded p-type conductivity when prepared at O2/Ar ratio of 4. In addition, shallower oxygen interstitial seemed to be found from films with better crystallinity. The largest shift in binding energy of Zn2p3/2 was observed from ZnO prepared on glass at O2/Ar ratio of 0.25, whereas that of O1s was obtained from ZnO deposited on SiNx at O2/Ar ratio of 4. A model was proposed in terms of O2 diffusion and hydrogen desorption in order to account for the observed property variations depending on substrates and O2/Ar ratios.

  1. Solution-based synthesis of cobalt-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vempati, Sesha [School of Mathematics and Physics, Queen' s University Belfast, BT7 1NN (United Kingdom); Shetty, Amitha [Materials Research Center, Indian Institute of Science, Bangalore 560012 (India); Dawson, P., E-mail: p.dawson@qub.ac.uk [School of Mathematics and Physics, Queen' s University Belfast, BT7 1NN (United Kingdom); Nanda, K.K.; Krupanidhi, S.B. [Materials Research Center, Indian Institute of Science, Bangalore 560012 (India)

    2012-12-01

    Undoped and cobalt-doped (1-4 wt.%) ZnO polycrystalline, thin films have been fabricated on quartz substrates using sequential spin-casting and annealing of simple salt solutions. X-ray diffraction (XRD) reveals a wurzite ZnO crystalline structure with high-resolution transmission electron microscopy showing lattice planes of separation 0.26 nm, characteristic of (002) planes. The Co appears to be tetrahedrally co-ordinated in the lattice on the Zn sites (XRD) and has a charge of + 2 in a high-spin electronic state (X-ray photoelectron spectroscopy). Co-doping does not alter the wurzite structure and there is no evidence of the precipitation of cobalt oxide phases within the limits of detection of Raman and XRD analysis. Lattice defects and chemisorbed oxygen are probed using photoluminescence and Raman spectroscopy - crucially, however, this transparent semiconductor material retains a bandgap in the ultraviolet (3.30-3.48 eV) and high transparency (throughout the visible spectral regime) across the doping range. - Highlights: Black-Right-Pointing-Pointer Simple solution-based method for the fabrication of Co-doped ZnO thin films. Black-Right-Pointing-Pointer Evidence for Co substitution on Zn sites in + 2 oxidation state. Black-Right-Pointing-Pointer ZnO, with up to 4% Co doping, retains high transparency across visible spectrum. Black-Right-Pointing-Pointer Quenching of exciton photoluminescence linked to chemisorbed oxygen in Co-doped ZnO.

  2. A model bismuth oxide intergranular thin film in a ZnO twist grain boundary

    Energy Technology Data Exchange (ETDEWEB)

    Domingos, H S [INESC, Microsistemas and Nanotecnologias, Rua Alves Redol 1-9, P-1000-029 Lisbon (Portugal)

    2010-04-14

    The electronic properties of a model bismuth oxide intergranular film in ZnO were investigated using density functional plane wave calculations. It was found that oxygen excess plays a fundamental role in the appearance of electrical activity. The introduction by oxygen interstitials or zinc vacancies results in depletion of the charge in deep gap states introduced by the bismuth impurities. This makes the boundary less metallic and promotes the formation of acceptor states localized to the boundary core, resulting in Schottky barrier enhancement. The results indicate that the origin of electrical activity in thin intergranular bismuth oxide films is probably not distinct from that in decorated ZnO boundaries.

  3. Second harmonic generation in ZnO thin films fabricated by metalorganic chemical vapor deposition

    Science.gov (United States)

    Liu, C. Y.; Zhang, B. P.; Binh, N. T.; Segawa, Y.

    2004-07-01

    Second harmonic generation (SHG) from ZnO thin films fabricated by metalorganic chemical vapor deposition (MOCVD) technique was carried out. By comparing the second harmonic signal generated in a series of ZnO films with different deposition temperatures, we conclude that a significant part of second harmonic signal is generated at the film deposited with appropriate temperature. The second-order susceptibility tensor χ(2)zzz=9.2 pm/V was deduced for a film deposited at 250 °C.

  4. Room temperature ferromagnetism of Ni, (Ni, Li), (Ni, N)-doped ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    AU; ChakTong

    2010-01-01

    Ni-doped ZnO thin films (Ni concentration up to 10 mol%) were generated on Si (100) substrates by a sol-gel technique. The films showed wurtzite structure and no other phase was found. The chemical state of Ni was found to be bivalent by X-ray photoelectron spectroscopy. The results of magnetic measurements at room temperature indicated that the films were ferromagnetic, and magnetic moment decreased with rise of Ni concentration. The magnetization of Ni (10 mol%)-doped ZnO film annealed in nitrogen was lower than that annealed in argon, suggesting that the density of defects had an effect on ferromagnetism.

  5. Growth and optical characteristics of high-quality ZnO thin films on graphene layers

    Directory of Open Access Journals (Sweden)

    Suk In Park

    2015-01-01

    Full Text Available We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm2 at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

  6. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    L M Kukreja; A K Das; P Misra

    2009-06-01

    Six decades of research on ZnO has recently sprouted a new branch in the domain of resistive random access memories. Highly resistive and c-axis oriented ZnO thin films were grown by us using d.c. discharge assisted pulsed laser deposition on Pt/Ti/SiO2/Si substrates at room temperature. The resistive switching characteristics of these films were studied in the top-bottom configuration using current–voltage measurements at room temperature. Reliable and repeated switching of the resistance of ZnO thin films was obtained between two well defined states of high and low resistance with a narrow dispersion and small switching voltages. Resistance ratios of the high resistance state to low resistance state were found to be in the range of 2–5 orders of magnitude up to 20 test cycles. The conduction mechanism was found to be dominated by the Ohmic behaviour in low resistance states, while Poole–Frenkel emission was found to dominate in high resistance state. The achieved characteristics of the resistive switching in ZnO thin films seem to be promising for nonvolatile memory applications.

  7. Growth and optical characteristics of high-quality ZnO thin films on graphene layers

    Energy Technology Data Exchange (ETDEWEB)

    Park, Suk In; Tchoe, Youngbin; Baek, Hyeonjun; Hyun, Jerome K.; Yi, Gyu-Chul, E-mail: njkim36@gmail.com, E-mail: gcyi@snu.ac.kr [Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Heo, Jaehyuk [Advanced Development Team, LED Business, Samsung Electronics Co., Ltd., San#24 Nongseo-Dong, Giheung-Gu, Yongin-City, Gyeonggi-Do 446–711 (Korea, Republic of); Jo, Janghyun; Kim, Miyoung [Department of Materials Science and Engineering, Seoul National University, Seoul 151–744 (Korea, Republic of); Kim, Nam-Jung, E-mail: njkim36@gmail.com, E-mail: gcyi@snu.ac.kr [Department of Physics and Chemistry, Korea Military Academy, Seoul (Korea, Republic of)

    2015-01-01

    We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL) characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm{sup 2} at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

  8. Nanostructured hybrid ZnO thin films for energy conversion

    Directory of Open Access Journals (Sweden)

    Samantilleke Anura

    2011-01-01

    Full Text Available Abstract We report on hybrid films based on ZnO/organic dye prepared by electrodeposition using tetrasulfonated copper phthalocyanines (TS-CuPc and Eosin-Y (EoY. Both the morphology and porosity of hybrid ZnO films are highly dependent on the type of dyes used in the synthesis. High photosensitivity was observed for ZnO/EoY films, while a very weak photoresponse was obtained for ZnO/TS-CuPc films. Despite a higher absorption coefficient of TS-CuPc than EoY, in ZnO/EoY hybrid films, the excited photoelectrons between the EoY levels can be extracted through ZnO, and the porosity of ZnO/EoY can also be controlled.

  9. Transparent conductive Nd-doped ZnO thin films

    Science.gov (United States)

    Nistor, M.; Millon, E.; Cachoncinlle, C.; Seiler, W.; Jedrecy, N.; Hebert, C.; Perrière, J.

    2015-03-01

    Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display the wurtzite phase. Different epitaxial relationships between films and substrate as a function of growth pressure and substrate temperature were evidenced by asymmetric x-ray diffraction measurements. By varying PLD growth conditions, the films can be tuned to have either metallic or semiconductor characteristics, with good optical transmittance in the visible range. Moreover, a low-temperature metal-insulator transition may be observed in Nd-doped ZnO films grown under low oxygen pressure. Resistivities as low as 6 × 10-4 Ω cm and 90% optical transmittance in the visible range and different near-infrared transmittance are obtained with approximately 1.0-1.5 at.% Nd doping and growth temperature of approximately 500 °C.

  10. Preparation and characterization of nanostructured ZnO thin films for photoelectrochemical splitting of water

    Indian Academy of Sciences (India)

    Monika Gupta; Vidhika Sharma; Jaya Shrivastava; Anjana Solanki; A P Singh; V R Satsangi; S Dass; Rohit Shrivastav

    2009-02-01

    Nanostructured zinc oxide thin films (ZnO) were prepared on conducting glass support (SnO2: F overlayer) via sol–gel starting from colloidal solution of zinc acetate 2-hydrate in ethanol and 2-methoxy ethanol. Films were obtained by spin coating at 1500 rpm under room conditions (temperature, 28–35°C) and were subsequently sintered in air at three different temperatures (400, 500 and 600°C). The evolution of oxide coatings under thermal treatment was studied by glancing incidence X-ray diffraction and scanning electron microscopy. Average particle size, resistivity and bandgap energy were also determined. Photoelectrochemical properties of thin films and their suitability for splitting of water were investigated. Study suggests that thin films of ZnO, sintered at 600°C are better for photoconversion than the films sintered at 400 or 500°C. Plausible explanations have been provided.

  11. Enhanced optical band-gap of ZnO thin films by sol-gel technique

    Science.gov (United States)

    Raghu, P.; Naveen, C. S.; Shailaja, J.; Mahesh, H. M.

    2016-05-01

    Transparent ZnO thin films were prepared using different molar concentration (0.1 M, 0.2 M & 0.8 M) of zinc acetate on soda lime glass substrates by the sol-gel spin coating technique. The optical properties revealed that the transmittance found to decrease with increase in molar concentration. Absorption edge showed that the higher concentration film has increasingly red shifted. An increased band gap energy of the thin films was found to be direct allowed transition of ˜3.9 eV exhibiting their relevance for photovoltaic applications. The extinction coefficient analysis revealed maximum transmittance with negligible absorption coefficient in the respective wavelengths. The results of ZnO thin film prepared by sol-gel technique reveal its suitability for optoelectronics and as a window layer in solar cell applications.

  12. Pulsed laser deposited cobalt-doped ZnO thin film

    Science.gov (United States)

    Wang, Li; Su, Xue-qiong; Lu, Yi; Chen, Jiang-bo

    2013-09-01

    To realize the room-temperature ferromagnetism (RTFM) in diluted magnetic semiconductors (DMS), we prepared a series of Cobalt-doped ZnO thin films using pulsed laser deposition (PLD) at deposition temperatures 500°C under oxygen pressure from 2.5×10-4 Pa to 15 Pa. To elucidate the physical origin of RTFM, Co 2p spectra of cobalt-doped ZnO thin films was measured by X-ray photoelectron spectroscopy (XPS). The magnetic properties of films were measured by an alternating gradient magnetometer (AGM), and the electrical properties were detected by a Hall Effect instrument using the Van der Pauw method. XPS analysis shows that the Co2+ exists and Co clusters and elemental content change greatly in samples under various deposition oxygen pressures. Not only the valence state and elemental content but also the electrical and magnetic properties were changed. In the case of oxygen pressure 10 Pa, an improvement of saturation magnetic moment about one order of magnitude over other oxygen pressure experiments, and the film exhibits ferromagnetism with a curie temperature above room temperature. It was found that the value of carrier concentration in the Co-doped ZnO film under oxygen pressure 10Pa increases about one order of magnitude than the values of other samples under different oxygen pressure. Combining XPS with AGM measurements, we found that the ferromagnetic signals in cobalt-doped ZnO thin film deposited at 500 °C under oxygen pressure 10 Pa only appear with the detectable Co2+ spectra from incompletely oxidized Co metal or Co cluster. So oxygen pressure 10 Pa can be thought the best condition to obtain room-temperature dilute magnetic semiconductor about cobalt-doped ZnO thin films.

  13. Experiment and prediction on thermal conductivity of Al2O3/ZnO nano thin film interface structure

    Indian Academy of Sciences (India)

    Ping Yang; Liqiang Zhang; Haiying Yang; Dongjing Liu; Xialong Li

    2014-05-01

    We predict that there is a critical value of Al2O3/ZnO nano thin interface thickness based on two assumptions according to an interesting phenomenon, which the thermal conductivity (TC) trend of Al2O3/ZnO nano thin interface is consistent with that of relevant single nano thin interface when the nano thin interface thickness is > 300 nm; however, TC of Al2O3/ZnO nano thin interface is higher than that of relevant single nano thin interface when the thin films thickness is < 10 nm. This prediction may build a basis for the understanding of interface between two different oxide materials. It implies an idea for new generation of semiconductor devices manufacturing.

  14. Electrical characteristics of ZnO nanorods reinforced polymer nanocomposite thin films

    International Nuclear Information System (INIS)

    ZnO nanorods have been prepared by simple chemical method, which is used to fabricate organic bistable devices (OBDs). OBDs are fabricated by incorporating different weight percent (wt %) of chemically synthesized Zinc Oxide (ZnO) nanorods into polymethylmethacrylate (PMMA). Current-voltage (I-V) measurements of the spin coated ZnO+PMMA nanocomopsite thin film on indium tin oxide (ITO) coated glass substrate showed current hysteresis behaviour, which is an indication of memory effect. The samples exhibit two distinct resistance states, ON and OFF states, characterised by relatively low and high resistance of the OBDs, respectively. It is also observed that with change in ZnO dopant concentration the value of ON/OFF current changes. Higher ON/OFF current ratio is desired for practical applications. Current conduction mechanism of the devices has been explained invoking various existing models, and it has been found that the trapped-charge-limited conduction mechanism was dominant in our samples

  15. Role of Ni doping on transport properties of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dar, Tanveer Ahmad, E-mail: tanveerphysics@gmail.com; Agrawal, Arpana; Sen, Pratima [Laser Bhawan, School Of Physics, Devi Ahilaya University Takshashila Campus Khandwa Road Indore, Indore-452001 (India)

    2015-06-24

    Nickel doped (Ni=0.05) and undoped Zinc Oxide (ZnO) thin films have been prepared by Pulsed laser deposition (PLD) technique. The structural analysis of the films was done by X-ray diffraction (XRD) studies which reveal absence of any secondary phase in the prepared samples. UV transmission spectra show that Ni doping reduces the transparency of the films. X-ray Photoelectron spectroscopy (XPS) also shows the presence of metallic Ni along with +2 oxidation state in the sample. Low temperature magneto transport properties of the ZnO and NiZnO films are also discussed in view of Khosla fisher model. Ni doping in ZnO results in decrease in magnitude of negative MR.

  16. Electrical characteristics of ZnO nanorods reinforced polymer nanocomposite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharjee, Snigdha; Roy, Asim, E-mail: 28.asim@gmail.com [Department of Physics National Institute Technology Silchar Silchar-788010, Assam (India)

    2015-05-15

    ZnO nanorods have been prepared by simple chemical method, which is used to fabricate organic bistable devices (OBDs). OBDs are fabricated by incorporating different weight percent (wt %) of chemically synthesized Zinc Oxide (ZnO) nanorods into polymethylmethacrylate (PMMA). Current-voltage (I-V) measurements of the spin coated ZnO+PMMA nanocomopsite thin film on indium tin oxide (ITO) coated glass substrate showed current hysteresis behaviour, which is an indication of memory effect. The samples exhibit two distinct resistance states, ON and OFF states, characterised by relatively low and high resistance of the OBDs, respectively. It is also observed that with change in ZnO dopant concentration the value of ON/OFF current changes. Higher ON/OFF current ratio is desired for practical applications. Current conduction mechanism of the devices has been explained invoking various existing models, and it has been found that the trapped-charge-limited conduction mechanism was dominant in our samples.

  17. Influence of high-pressure hydrogen treatment on structural and electrical properties of ZnO thin films

    International Nuclear Information System (INIS)

    ZnO thin films were treated by high-pressure hydrogen (H2). Scanning electron microscope (SEM) images show that the surface morphology of ZnO films has been changed significantly by H2 treatment. X-ray diffraction patterns show that the Zn(OH)2 phases formed after H2 treatment. The X-ray photoelectron spectroscopy results indicate that H atoms were doped into the surface of ZnO by forming H-O-Zn bond. The phenomenon shows that it is easy to form O-H bond in ZnO rather than H interstitial atom under high-pressure hydrogen circumstance.

  18. Effect of R.F. Power to the Structural Properties of ZnO Thin Films Deposited by Magnetron Sputtering

    International Nuclear Information System (INIS)

    The effect of RF power variation (100 watt∼400 watt ) on the zinc oxide (ZnO) thin films electrical, optical and structural properties were examined using current voltage (I-V) measurement, UV-Vis-NIR spectrophotometer, x-ray diffraction (XRD) and atomic force microscope (AFM). ZnO thin films were prepared at room temperature in pure argon atmosphere by a RF magnetron sputtering using ZnO target. The resistivity of thin film show the lowest at 300 watt. The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties using UV-VIS spectrophotometer (JASCO 670) . Highly oriented ZnO thin films [002] direction were obtained by using Rigaku Ultima IV. (author)

  19. Effects of sapphire substrates surface treatment on the ZnO thin films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang Yinzhen [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)], E-mail: agwyz@yahoo.com.cn; Chu Benli [School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510631 (China)

    2008-06-01

    The surface treatment effects of sapphire substrate on the ZnO thin films grown by magnetron sputtering were studied. The sapphire substrates properties have been investigated by means of atomic force microscopy (AFM) and X-ray diffraction rocking curves (XRCs). The results show that sapphire substrate surfaces have the best quality by CMP with subsequent chemical etching. The surface treatment effects of sapphire substrate on the ZnO thin films were examined by X-ray diffraction (XRD) and photoluminescence (PL) measurements. Results show that the intensity of (0 0 2) diffraction peak of ZnO thin films on sapphire substrates treated by CMP with subsequent chemical etching was strongest, FWHM of (0 0 2) diffraction peak is the narrowest and the intensity of UV peak of PL spectrum is strongest, indicating surface treatment on sapphire substrate preparation may improve ZnO thin films crystal quality and photoluminescent property.

  20. Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering

    Indian Academy of Sciences (India)

    Sushil Kumar Pandey; Saurabh Kumar Pandey; Vishnu Awasthi; Ashish Kumar; Uday P Deshpande; Mukul Gupta; Shaibal Mukherjee

    2014-08-01

    We have investigated the influence of in situ annealing on the optical, electrical, structural and morphological properties of ZnO thin films prepared on -type Si(100) substrates by dual ion beam sputtering deposition (DIBSD) system. X-ray diffraction (XRD) measurements showed that all ZnO films have (002) preferred orientation. Full-width at half-maximum (FWHM) of XRD from the (002) crystal plane was observed to reach to a minimum value of 0.139° from ZnO film, annealed at 600 °C. Photoluminescence (PL) measurements demonstrated sharp near-band-edge emission (NBE) at ∼ 380 nm along with broad deep level emissions (DLEs) at room temperature. Moreover, when the annealing temperature was increased from 400 to 600 °C, the ratio of NBE peak intensity to DLE peak intensity initially increased, however, it reduced at further increase in annealing temperature. In electrical characterization as well, when annealing temperature was increased from 400 to 600 °C, room temperature electron mobility enhanced from 6.534 to 13.326 cm2/V s, and then reduced with subsequent increase in temperature. Therefore, 600 °C annealing temperature produced good-quality ZnO film, suitable for optoelectronic devices fabrication. X-ray photoelectron spectroscopy (XPS) study revealed the presence of oxygen interstitials and vacancies point defects in ZnO film annealed at 400 °C.

  1. Characteristics of laser-annealed ZnO thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jun-Je; Bak, Jun-Yong; Lee, Jong-Hoon [Department of Nano Semiconductor, Korea Maritime University, Busan 606-791 (Korea, Republic of); Kim, Hong Seung, E-mail: hongseung@hhu.ac.k [Department of Nano Semiconductor, Korea Maritime University, Busan 606-791 (Korea, Republic of); Jang, Nak-Won [Department of Electrical Engineering, Korea Maritime University, Busan 609-791 (Korea, Republic of); Yun, Young [Department of Radio Communication Engineering, Korea Maritime University, Busan 606-791 (Korea, Republic of); Lee, Won-Jae [Department of Nano Technology, Dong Eui University, Busan 614-714 (Korea, Republic of)

    2010-03-31

    We investigated the effects of laser annealing on ZnO thin film transistors (TFTs). ZnO layers were deposited on a bottom-gate patterned Si substrate by radio-frequency sputtering at room temperature. Laser annealing of the ZnO films reduced the full width at half maximum of the ZnO (002) diffraction peak from 0.49{sup o} to 0.1{sup o}. It reveals that the crystalline quality is improved by annealing effect. A SiO{sub 2} formed in low temperature was used as the gate dielectric. Unannealed ZnO-TFTs were operated in enhancement mode with a threshold voltage of 21.6 V. They had a field-effect mobility of 0.004 cm{sup 2}/Vs and an on/off current ratio of 134. Laser annealing of the ZnO-TFTs by 200 laser pulses reduced their threshold voltage to 0.6 V and increased their field-effect mobility to 5.08 cm{sup 2}/Vs. The increase of mobility is originated from the crystallization enhancement of ZnO films after laser annealing.

  2. Impact of strain on electronic defects in (Mg,Zn)O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Florian, E-mail: fschmidt@physik.uni-leipzig.de; Müller, Stefan; Wenckstern, Holger von; Benndorf, Gabriele; Pickenhain, Rainer; Grundmann, Marius [Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig (Germany)

    2014-09-14

    We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y₂, previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively strained thin films. Furthermore a structural defect E3´ can be detected via DLTS measurements and is only incorporated in tensile strained samples. Finally it is shown that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples.

  3. Polyelectrolyte-assisted preparation and characterization of nanostructured ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Shijun

    2005-05-15

    The present work focuses on the synthesis and characterization of nanostructured ZnO thin films onto silicon wafers modified by self-assembled-monolayers via chemical bath deposition. Two precursor solutions were designed and used for the film deposition, in which two different polymers were introduced respectively to control the growth of the ZnO colloidal particles in solution. ZnO films were deposited from an aqueous solution containing zinc salt and hexamethylenetetramine (HMTA) in the presence of a graft-copolymer (P (MAA{sub 0.50}-co(MAA-EO{sub 20}){sub 0.50}){sub 70}). A film-formation-diagram was established based on the results obtained by scanning electron microscopy (SEM) and atomic force microscopy (AFM), which describes the influence of the concentration of HMTA and copolymer on the ZnO film formation. According to the film morphology, film formation can be classified into three categories: (a) island-like films, (b) uniform films and (c) canyon-like films. The ZnO films annealed at temperatures of 450 C, 500 C, 600 C and 700 C were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). After annealing, the films are polycrystalline ZnO with wurtzite structure. XRD measurements indicate that with increasing annealing temperature, the average grain size increases accordingly and the crystallinity of the films is improved. Upon heating to 600 C, the ZnO films exhibit preferred orientation with c-axis normal to substrate, whereas the films annealed at 700 C even show a more explicit texture. By annealing at temperatures above 600 C the ZnO film reacts with the substrate to form an interfacial layer of Zn{sub 2}SiO{sub 4}, which grows thicker at elevated annealing temperatures. The ZnO films annealed at 600 C and 700 C show strong UV emission. Another non-aqueous solution system for ZnO thin film deposition was established, in which 2- propanol was used as a solvent and Zn(CH3COO){sub 2}.2H{sub 2}O as well as NaOH as reactants

  4. MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    J. Lee; W. Gao; Z. Li; M. Hodgson; A. Asadov; J. Metson

    2005-01-01

    ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. The correlation of the annealing conditions with the microstructure and properties of the ZnO films were investigated by ultraviolet-visible spectroscopy, X-ray diffraction, conductivity measurement and scanning electron microscopy. Only the strong 002peak could be observed by X-ray diffraction. The post-deposition annealing of ZnO films was found to alter the film's microstructure and properties, including crystallinity, porosity, grain size, internal stress level and resistivity. It was also found that after annealing, the conductivity of poorly conductive samples often improved. However, annealing does not improve the conductivity of samples with high conductivity prior to annealing. The resistivity of as-grown films annealing on the conductivity of ZnO, it is believed that annealing may alter the presence and distribution of oxygen defects, reduce the lattice stress, cause diffusion, grain coarsening and recrystallization. Annealing will reduce the density of grain boundaries in less dense films,which may decrease the resistivity of the films. On the other hand, annealing may also increase the porosity of thin films, leading to an increase in resistivity.

  5. Effect of substrate temperature on structural and optical properties of spray deposited ZnO thin films

    Directory of Open Access Journals (Sweden)

    Larbah Y.

    2015-09-01

    Full Text Available Undoped ZnO thin films have been prepared on glass substrates at different substrate temperatures by spray pyrolysis method. The effect of temperature on the structural, morphological and optical properties of n-type ZnO films was studied. The X-ray diffraction (XRD results confirmed that the ZnO thin films were polycrystalline with wurtzite structure. Scanning electron microscopy (SEM measurements showed that the surface morphology of the films changed with temperature. The studies demonstrated that the ZnO film had a transmission of about 85 % and energy gap of 3.28 eV at 450 °C. The RBS measurements revealed that ZnO layers with a thickness up to 200 nm had a good stoichiometry.

  6. ZnO thin film piezoelectric MEMS vibration energy harvesters with two piezoelectric elements for higher output performance.

    Science.gov (United States)

    Wang, Peihong; Du, Hejun

    2015-07-01

    Zinc oxide (ZnO) thin film piezoelectric microelectromechanical systems (MEMS) based vibration energy harvesters with two different designs are presented. These harvesters consist of a silicon cantilever, a silicon proof mass, and a ZnO piezoelectric layer. Design I has a large ZnO piezoelectric element and Design II has two smaller and equally sized ZnO piezoelectric elements; however, the total area of ZnO thin film in two designs is equal. The ZnO thin film is deposited by means of radio-frequency magnetron sputtering method and is characterized by means of XRD and SEM techniques. These ZnO energy harvesters are fabricated by using MEMS micromachining. The natural frequencies of the fabricated ZnO energy harvesters are simulated and tested. The test results show that these two energy harvesters with different designs have almost the same natural frequency. Then, the output performance of different ZnO energy harvesters is tested in detail. The effects of series connection and parallel connection of two ZnO elements on the load voltage and power are also analyzed. The experimental results show that the energy harvester with two ZnO piezoelectric elements in parallel connection in Design II has higher load voltage and higher load power than the fabricated energy harvesters with other designs. Its load voltage is 2.06 V under load resistance of 1 MΩ and its maximal load power is 1.25 μW under load resistance of 0.6 MΩ, when it is excited by an external vibration with frequency of 1300.1 Hz and acceleration of 10 m/s(2). By contrast, the load voltage of the energy harvester of Design I is 1.77 V under 1 MΩ resistance and its maximal load power is 0.98 μW under 0.38 MΩ load resistance when it is excited by the same vibration. PMID:26233403

  7. Comparative study of ZnO thin films prepared by different sol-gel route

    Directory of Open Access Journals (Sweden)

    F Esmaieli Ghodsi

    2012-03-01

    Full Text Available   Retraction Notice    The paper "Comparative study of ZnO thin films prepared by different sol-gel route" by H. Absalan and F. E. Ghodsi, which appeared in Iranian Journal of Physics Research, Vol. 11, No. 4, 423-428 (in Farsi is translation of the paper "Comparative Study of ZnO Thin Films Prepared by Different Sol-Gel Route" by F. E. Ghodsi and H. Absalan, which appeared in ACTA PHYSICA POLONICA A, Vol 118 (2010 (in English and for this reason is retracted from this journal.The corresponding author  (and also the first author is the only responsible person for this action.   

  8. Recent advances in the transparent conducting ZnO for thin-film Si solar cells

    Science.gov (United States)

    Moon, Taeho; Shin, Gwang Su; Park, Byungwoo

    2015-11-01

    The key challenge for solar-cell development lies in the improvement of power-conversion efficiency and the reduction of fabrication cost. For thin-film Si solar cells, researches have been especially focused on the light trapping for the breakthrough in the saturated efficiencies. The ZnO-based transparent conducting oxides (TCOs) have therefore received strong attention because of their excellent light-scattering capability by the texture-etched surface and cost effectiveness through in-house fabrication. Here, we have highlighted our recent studies on the transparent conducting ZnO for thin-film Si solar cells. From the electrical properties and their degradation mechanisms, bilayer deposition and organic-acid texturing approaches for enhancing the light trapping, and finally the relation between textured ZnO and electrical cell performances are sequentially introduced in this review article. [Figure not available: see fulltext.

  9. Identification of Parameters influencing in the Growth of Thin Layers ZnO Using MOCVD Method

    International Nuclear Information System (INIS)

    The identification of growth parameters of zinc oxide thin films has been studied. From the analysis of effect growth rate on the total pressure, it was found that the growth rate increased exponentially with total pressure. It was also found that higher activation energy was reached at mass composition of DEZ and H2O of 20 sccm and 40 sccm, respectively. Effect of precursor rate with nozzle distance from substrate on the peak intensity ratio ((110)/(002)) and ((100)/(002) was studied. It was found that the reflection peak intensity changes from (002) to (110). The lower sheet resistivity of 3.42 ohm/sqr at 4.47 μm thick film. This result indicated that the growth parameters of ZnO thin films should be knew to order to grow ZnO films with good quality and low resistivity. (author)

  10. Linear and nonlinear optical investigations of nano-scale Si-doped ZnO thin films: spectroscopic approach

    Science.gov (United States)

    Jilani, Asim; Abdel-wahab, M. Sh.; Zahran, H. Y.; Yahia, I. S.; Al-Ghamdi, Attieh A.

    2016-09-01

    Pure and Si-doped ZnO (SZO) thin films at different concentration of Si (1.9 and 2.4 wt%) were deposited on highly cleaned glass substrate by radio frequency (DC/RF) magnetron sputtering. The morphological and structural investigations have been performed by atomic force electron microscope (AFM) and X-ray diffraction (XRD). The X-ray photoelectron spectroscopy was employed to study the composition and the change in the chemical state of Si-doped ZnO thin films. The optical observations like transmittance, energy band gap, extinction coefficient, refractive index, dielectric loss of pure and Si-doped ZnO thin films have been calculated. The linear optical susceptibility, nonlinear refractive index, and nonlinear optical susceptibility were also studied by the spectroscopic approach rather than conventional Z-scan method. The energy gap of Si-doped ZnO thin films was found to increase as compared to pure ZnO thin films. The crystallinity of the ZnO thin films was effected by the Si doping. The O1s spectra in pure and Si-doped ZnO revealed the bound between O-2 and Zn+2 ions and reduction in the surface oxygen with the Si doping. The chemical state analysis of Si 2p showed the conversation of Si to SiOx and SiO2. The increase in the first-order linear optical susceptibility χ (1) and third-order nonlinear optical susceptibility χ (3) was observed with the Si doping. The nonlinear studies gave some details about the applications of metal oxides in nonlinear optical devices. In short, this study showed that Si doping through sputtering has effected on the structural, surface and optical properties of ZnO thin films which could be quite useful for advanced applications such as metal-oxide-based optical devices.

  11. Pump-probe measurement of ZnO epitaxial thin films

    CERN Document Server

    Yamamoto, A; Goto, T; Chen, Y; Yao, T; Kasuya, A

    1999-01-01

    Time-resolved optical absorption spectra of ZnO epitaxial thin films have been measured by using a pump-probe technique with subpicosecond time resolution. We have observed following three structures in the differential absorption spectra: saturation of the exciton absorption, bandgap renormalization and optical gain. The optical gain is thought to be due to electron-hole plasma. From the temporal changes of these structures, the dynamical properties of the photo-excited carriers are discussed.

  12. Carrier dynamics and gain spectra at room-temperature in epitaxial ZNO thin films

    DEFF Research Database (Denmark)

    Yu, Ping; Hvam, Jørn Märcher; Wong, K. S.;

    1999-01-01

    Carrier dynamics of epitaxial ZnO thin film was investigated using a frequency up-conversion tehcnique. At lower carrier densities, the decay time of free exciton recombination was measured to be 24 ps. Rapid decay times of a few picoseconds were observed at higher carrier densities, which show a...... transition of two dynamic processes. The comparison of calculated gain spectrum and experimental data gave evidence that the transition is form exciton-exciton scattering to the recombination of electron hole plasma....

  13. Photoelectrochemical characterization of dye-modified ZnO hybrid thin films prepared by electrochemical deposition

    OpenAIRE

    Nonomura, Kazuteru

    2006-01-01

    Dye-sensitized electrodeposited ZnO thin films were studied in their photoelectrochemical characteristics. Such electrodes can be applied for dye-sensitized solar cells. The main analysis techniques were wavelength- dependent photocurrent measurements to obtain the incident photon to current conversion efficiency (IPCE) of the films as well as time- and frequency- resolved measurements of the photocurrent (IMPS) and photovoltage (IMVS) to characterize in detail individual steps of photoelectr...

  14. Improved sensing response of photo activated ZnO thin film for hydrogen peroxide detection.

    Science.gov (United States)

    Parthasarathy, S; Nandhini, V; Jeyaprakash, B G

    2016-11-15

    The nanostructured ZnO thin films were deposited using spray pyrolysis technique. Formation of polycrystalinity with hexagonal wurtzite structure was observed from the structural study. Highly dense spherical shaped nanoparticles with fine crystallites were observed from the surface morphological studies. The light induced hydrogen peroxide vapour sensing was done using chemi-resistive method and its effect on the sensing response was studied and reported. PMID:27491004

  15. Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

    Science.gov (United States)

    Akgul, Guvenc; Aksoy Akgul, Funda; Emrah Unalan, Husnu; Turan, Rasit

    2016-04-01

    In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1 0 0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)-voltage (V) measurements under simulated solar irradiation of AM 1.5 G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37 V, 3.30 mA cm-2, 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100 nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.

  16. Optical and electrical studies of ZnO thin films heavily implanted with silver ions

    International Nuclear Information System (INIS)

    Thin films of zinc oxide (ZnO) with the thickness of 200 nm have been deposited on quartz substrates by using ion-beam sputtering technique. Then Ag+ ions with the energy of 30 keV have been implanted into as-deposited ZnO films to the fluences in the range of (0.25-1.00)×1017 ions/cm2 to form ZnO:Ag composite layers with different concentrations of the silver impurity. The analysis of the microstructure has shown that the thickness of the ZnO film decreases, and the Ag dopant concentration tends to the saturation with increasing Ag implantation fluence. The ZnO:Ag composite layers reveal the optical selective absorption at the wavelength of the surface plasmon resonance that is typical for silver nanoparticles dispersed in the ZnO matrix. The red shift of the plasmon resonance peak from 480 to 500 nm is observed with the increase in the implantation fluence to 0.75×1017 Ag ions/cm2. Then the absorption peak position starts the backward motion, and the absorption intensity decreases with the subsequent increase in the implantation fluence. The non-monotonic dependence of the absorption peak position on the implantation fluence has been analyzed within of Maxwell Garnet theory and taking into account the strong sputtering of ZnO films during implantation. The ZnO:Ag composite layers exhibit the p-type conductivity indicating that a part of Ag+ ions is in the form of acceptor impurities implanted into the ZnO lattice

  17. Structural, morphological, optical and opto-thermal properties of Ni-doped ZnO thin films using spray pyrolysis chemical technique

    Indian Academy of Sciences (India)

    S Rajeh; A Barhoumi; A Mhamdi; G Leroy; B Duponchel; M Amlouk; S Guermazi

    2016-02-01

    Nickel-doped zinc oxide thin films (ZnO : Ni) at different percentages were deposited on glass substrates using a chemical spray technique. The effect of Ni concentration on the structural, morphological, optical and photoluminescence (PL) properties of the ZnO : Ni thin films were investigated. X-ray diffraction analysis revealed that all films consist of single phase ZnO and was well crystallized in würtzite phase with the crystallites preferentially oriented towards the (002) direction parallel to the c-axis. The optical transmittance measurement was found to be higher than 90%, the optical band gap values of ZnO thin films decreased after doping from 3.29 to 3.21 eV. A noticeable change in optical constants was observed between undoped and Ni-doped ZnO. Room-temperature PL is observed for ZnO, and Ni-doped ZnO thin films.

  18. Performance Evaluation of ZnO based Rare Earth Element Doped Thin Films

    Directory of Open Access Journals (Sweden)

    Manish Sharma

    2013-10-01

    Full Text Available In DMS materials, a small fraction of a host semiconductor cation is substituted by magnetic ions. We chose as semiconducting host the transparent ZnO, with a bandgap of 3.3 eV at room temperature. Studies on ZnO doped with 3d transition metals indicated only small magnetic moments. The more recent results for Gd in GaN, indicating high magnetic moments, motivated us to investigate ZnO thin films doped with rare earth (RE metal ions. For the 3d transition metals, the 3d electrons are exterior and delocalized; leading to strong direct exchange interactions and high Curie temperatures, but often the orbital momentum is zero, leading to small total magnetic moments per atom. In RE metals, the 4f electrons are localized, exchange interactions are indirect, via 5d or 6s conduction electrons, but the high orbital momentum is leading to high total magnetic moments per atom, like 3.27μB for Nd. The Curie point for Nd is 19 K. In this paper we present the results of our study on ZnO films doped with Nd. Hall measurements are performed to investigate the electrical properties of films. Here we prepared and investigated ZnO films doped with different concentration of Nd. The films are grown on a-plane Al2O3 or SiO2 substrates. Hall investigations of electrical properties revealed the presence of a degenerate, highly conducting, film–substrate interface layer for the films grown on Al2O3; such an effect can be avoided, for example, by using SiO2 substrates. Magnetotransport measurements indicated no anomalous Hall effect, but a pronounced negative magneto resistance ratio that can be interpreted as a paramagnetic response of the system to the applied magnetic field. We would like to proceed with the surface sensitive techniques for investigating magnetic properties of ZnO:RE thin films.

  19. Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer

    International Nuclear Information System (INIS)

    VO2 thin films are grown on glass substrates by pulsed laser deposition using vanadium metal as a target. In this study, a ZnO thin film was used as a buffer layer for the growth of VO2 thin films on glass substrates. X-ray diffraction studies showed that the VO2 thin film had b-axis preferential orientation on a c-axis oriented ZnO buffer layer. The thickness of the ZnO buffer layer and the oxygen pressure during VO2 deposition were optimized to grow highly b-axis oriented VO2 thin films. The metal-insulator transition properties of the VO2 film samples were investigated in terms of infrared reflectance and electrical resistance with varying temperatures.

  20. Engineering the switching dynamics of TiOx-based RRAM with Al doping

    Science.gov (United States)

    Trapatseli, Maria; Khiat, Ali; Cortese, Simone; Serb, Alexantrou; Carta, Daniela; Prodromakis, Themistoklis

    2016-07-01

    Titanium oxide (TiOx) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiOx thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

  1. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2015-01-07

    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (

  2. Fabrication and Characterization of High-Crystalline Nanoporous ZnO Thin Films by Modified Thermal Evaporation System

    Science.gov (United States)

    Islam, M. S.; Hossain, M. F.; Razzak, S. M. A.; Haque, M. M.; Saha, D. K.

    2016-05-01

    The aim of this work is to fabricate high-crystalline nanoporous zinc oxide (ZnO) thin films by a modified thermal evaporation system. First, zinc thin films have been deposited on bare glass substrate by the modified thermal evaporation system with pressure of 0.05mbar, source-substrate distance of 3cm and source temperature 700∘C. Then, high-crystalline ZnO thin film is obtained by annealing at 500∘C for 2h in atmosphere. The prepared ZnO films are characterized with various deposition times of 10min and 20min. The structural property was investigated by X-ray diffractometer (XRD). The optical bandgap and absorbance/transmittance of these films are examined by ultraviolet/visible spectrophotometer. The surface morphological property has been observed by scanning electron microscope (SEM). ZnO films have showed uniform nanoporous surface with high-crystalline hexagonal wurtzite structure. The ZnO films prepared with 20min has excitation absorption-edge at 369nm, which is blueshifted with respect to the bulk absorption-edge appearing at 380nm. The gap energy of ZnO film is decreased from 3.14eV to 3.09eV with increase of the deposition time, which can enhance the excitation of ZnO films by the near visible light, and is suitable for the application of photocatalyst of waste water cleaning and polluted air purification.

  3. Effect of ZnO Addition on Structural Properties of ZnO-PANi/ Carbon Black Thin Films

    International Nuclear Information System (INIS)

    The aim of this project was to investigate the effect of ZnO addition on the structural properties of ZnO-PANi/ carbon black thin films. The sol gel method was employed for the preparation of ZnO sol. The sol was dried for 24 h at 100 degree Celsius and then annealed at 600 degree Celsius for 5 h. XRD characterization of the ZnO powder showed the formation of wurtzite type ZnO crystals. The ZnO powder were mixed into PANi/ carbon black solution which was dissolved into M-Pyrol, N-Methyl-2-Pyrrolidinone (NMP) to produce a composite solution of ZnO-PANi/ carbon black. The weight ratio of ZnO were 4 wt %, 6 wt % and 8 wt %. The composite solutions were deposited onto glass substrates using a spin-coating technique to fabricate ZnO-PANi/ carbon black thin films. AFM characterization showed the decreasing of average roughness from 7.98 nm to 2.23 nm with the increment of ZnO addition in PANi/ carbon black films. The thickness of the films also decreased from 59.5 nm to 28.3 nm. FESEM image revealed that ZnO-PANi/ carbon black thin films have changed into agglomerated surface morphology resulting in the increment of porosity of the films. (author)

  4. Electrode loading effect and high temperature performance of ZnO thin film ultrasonic transducers

    Science.gov (United States)

    Zhou, X. S.; Zhang, J.; Hou, R.; Zhao, C.; Kirk, K. J.; Hutson, D.; Hu, P. A.; Peng, S. M.; Zu, X. T.; Fu, Y. Q.

    2014-10-01

    Nanocrystalline ZnO films of 5.8 μm thick were sputter-deposited on ferritic carbon steel plates (25 × 25 × 3 mm3) and characterized for use as ultrasonic transducers at both room temperature and high temperatures. Electrode loading effects have been studied using two types of electrodes, i.e., sputtered Cr/Au (5/50 nm) and silver paste, with electrode diameters 0.7-2.5 mm. Longitudinal and transverse waves were obtained in pulse-echo tests using both types of electrodes. With a silver paste top electrode, a dominant longitudinal mode was obtained, but with a thin Cr/Au film as the top electrode, shear waves were more dominant. Pulse-echo tests of the ZnO transducers were also performed at elevated temperatures up to 450 °C using a carbon paste electrodes. The sputtered ZnO films maintained a stable crystalline structure and orientation at the elevated temperatures, and ZnO devices on ferritic carbon steel could be used successfully up to 400 °C. However, when the temperature was increased further, rapid surface oxidation of the ferritic carbon steel caused the failure of the transducer.

  5. Conductivity of ZnO nanowires, nanoparticles, and thin films using time-resolved terahertz spectroscopy.

    Science.gov (United States)

    Baxter, Jason B; Schmuttenmaer, Charles A

    2006-12-21

    The terahertz absorption coefficient, index of refraction, and conductivity of nanostructured ZnO have been determined using time-resolved terahertz spectroscopy, a noncontact optical probe. ZnO properties were measured directly for thin films and were extracted from measurements of nanowire arrays and mesoporous nanoparticle films by applying Bruggeman effective medium theory to the composite samples. Annealing significantly reduces the intrinsic carrier concentration in the ZnO films and nanowires, which were grown by chemical bath deposition. The complex-valued, frequency-dependent photoconductivities for all morphologies were found to be similar at short pump-probe delay times. Fits using the Drude-Smith model show that films have the highest mobility, followed by nanowires and then nanoparticles, and that annealing the ZnO increases its mobility. Time constants for decay of photoinjected electron density in films are twice as long as those in nanowires and more than 5 times those for nanoparticles due to increased electron interaction with interfaces and grain boundaries in the smaller-grained materials. Implications for electron transport in dye-sensitized solar cells are discussed.

  6. Bias-voltage dependent ultraviolet photodetectors prepared by GaOx + ZnO mixture phase nanocrystalline thin films

    International Nuclear Information System (INIS)

    Highlights: •GaOx + ZnO thin films sputtered and annealed exhibit interesting and unique optical properties, especially deep UV photo response. •GaOx + ZnO thin films can be used to fabricate efficient deep UV photodetectors. •The mixture phase nature of GaOx + ZnO thin films is revealed to be responsible for the unique characteristics of the photodetectors. •Two bands in UV range can be adjusted by a applied voltage when the PDs were fabricated using the mixture phase nature of GaOx + ZnO thin films. -- Abstract: Ultraviolet (UV) photodetectors were prepared by using the GaOx + ZnO mixture phase thin films sputtered on sapphire as the photoresponse layer. The devices show good photoresponse in UV range. More interestingly, the device responsivity in the wavelength less than 280 nm range rapidly increases with increasing the applied voltage and becomes dominant for the bias ⩾3.0 V. X-ray diffraction, absorption and cathodoluminescence measurements firmly reveal the mixture phases in the thin films. Electric field dependent detrapping of photo-excited carriers in nanocrystals in the films shall be responsible for the observed bias-voltage dependent deep UV photoresponse of the devices

  7. Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    YANG Bing-chu; LIU Xiao-yan; GAO Fei; MA Xue-long

    2008-01-01

    ZnO thin films were prepared by direct current(DC) reactive magnetron sputtering under different oxygen partial pressures.And then the samples were annealed in vacuum at 450 ℃. The effects of the oxygen partial pressures and the treatment of annealing in vacuum on the photoluminescence and the concentration of six intrinsic defects in ZnO thin films such as oxygen vacancy(Vo),zinc vacancy(VZn), antisite oxygen(OZn), antisite zinc(ZnO), interstitial oxygen(Oi) and interstitial zinc(Zni) were studied. The results show that a green photoluminescence peak at 520 nm can be observed in all the samples, whose intensity increases with increasing oxygen partial pressure; for the sample annealed in vacuum, the intensity of the green peak increases as well. The green photoluminescence peak observed in ZnO may be attributed to zinc vacancy, which probably originates from transitions between electrons in the conduction band and zinc vacancy levels, or from transitions between electrons in zinc vacancy levels and up valence band.

  8. Preparation of manganese-doped ZnO thin films and their characterization

    Indian Academy of Sciences (India)

    S Mondal; S R Bhattacharyya; P Mitra

    2013-04-01

    In this study, pure and manganese-doped zinc oxide (Mn:ZnO) thin films were deposited on quartz substrate following successive ion layer adsorption and reaction (SILAR) technique. The film growth rate was found to increase linearly with number of dipping cycle. Characterization techniques of XRD, SEM with EDX and UV–visible spectra measurement were done to investigate the effect of Mn doping on the structural and optical properties of Mn:ZnO thin films. Structural characterization by X-ray diffraction reveals that polycrystalline nature of the films increases with increasing manganese incorporation. Particle size evaluated using X-ray line broadening analysis shows decreasing trend with increasing manganese impurification. The average particle size for pure ZnO is 29.71nm and it reduces to 23.76nm for 5%Mn-doped ZnO. The strong preferred c-axis orientation is lost due to manganese (Mn) doping. The degree of polycrystallinity increases and the average microstrain in the films decreases with increasing Mn incorporation. Incorporation of Mn was confirmed from elemental analysis using EDX. As the Mn doping concentration increases the optical bandgap of the films decreases for the range of Mn doping reported here. The value of fundamental absorption edge is 3.22 eV for pure ZnO and it decreases to 3.06 eV for 5%Mn:ZnO.

  9. Flexible pH sensors based on polysilicon thin film transistors and ZnO nanowalls

    Science.gov (United States)

    Maiolo, L.; Mirabella, S.; Maita, F.; Alberti, A.; Minotti, A.; Strano, V.; Pecora, A.; Shacham-Diamand, Y.; Fortunato, G.

    2014-09-01

    A fully flexible pH sensor using nanoporous ZnO on extended gate thin film transistor (EGTFT) fabricated on polymeric substrate is demonstrated. The sensor adopts the Low Temperature Polycrystalline Silicon (LTPS) TFT technology for the active device, since it allows excellent electrical characteristics and good stability and opens the way towards the possibility of exploiting CMOS architectures in the future. The nanoporous ZnO sensitive film, consisting of very thin (20 nm) crystalline ZnO walls with a large surface-to-volume ratio, was chemically deposited at 90 °C, allowing simple process integration with conventional TFT micro-fabrication processes compatible with wide range of polymeric substrates. The pH sensor showed a near-ideal Nernstian response (˜59 mV/pH), indicating an ideality factor α ˜ 1 according to the conventional site binding model. The present results can pave the way to advanced flexible sensing systems, where sensors and local signal conditioning circuits will be integrated on the same flexible substrate.

  10. Synthesis and Characterization of Varying Concentrations of Ag-doped ZnO Thin Films

    Science.gov (United States)

    Hachlica, Justin; Wadie-Ibrahim, Patrick; Sahiner, M. Alper

    Silver doped ZnO is a promising compound for photovoltaic solar cell use. Doping this compound with varying amounts of silver will theoretically make this type of thin film more efficient by reducing the overall resistance and increasing the voltage and current output. The extent of this promise is being tested experimentally, by analysis of both the electrical and the surface roughness properties of the cells. Ag-doped Zinc Oxide is deposited by method of Pulsed Laser Deposition (PLD) onto Indium Tin Oxide (ITO) coated Glass. Annealing effects were also observed by varying the temperature at which the annealing occurred after synthesis of the sample. Thickness is confirmed by use of Ellipsometery. X-Ray Diffraction (XRD) measurements confirmed a ZnO crystal structure on the thin films. The active dopant carrier concentrations were determined using a Hall Effect Measuring System. Finally, the photovoltaic properties of the film are recorded by using a Keithley Source Meter. The structural characterization and electrical results of the effect of Ag doping on ZnO will then be discussed.

  11. Growth of n-type ZnO thin films by using mixture gas of hydrogen and argon

    Institute of Scientific and Technical Information of China (English)

    Zhou Xin; Wang Shi-Qi; Lian Gui-Jun; Xiong Guang-Cheng

    2006-01-01

    High-quality oxide semiconductor ZnO thin films were prepared on single-crystal sapphire and LaAlO3 substrates by pulsed laser deposition (PLD) in the mixture gas of hydrogen and argon. Low resistivity n-type ZnO thin films with smoother surface were achieved by deposition at 600℃ in 1Pa of the mixture gas. In addition, ferromagnetism was observed in Co-doped ZnO thin films and rectification Ⅰ-Ⅴ curves were found in p-GaN/n-ZnO and p-CdTe/n-ZnO heterostructure junctions. The results indicated that using mixture gas of hydrogen and argon in PLD technique was a flexible method for depositing high-quality n-type oxide semiconductor films, especially for the multilayer thin film devices.

  12. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

    Directory of Open Access Journals (Sweden)

    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  13. Epitaxial electrodeposition of ZnO thin film on GaN(0001) bulk single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Ichinose, Keigo; Yoshida, Tsukasa [Center of Innovative Photovoltaic Systems (CIPS), Environmental and Renewable Energy Systems (ERES) Division, Graduate School of Engineering, Gifu University (Japan)

    2008-10-15

    Ga terminated surface of heavily doped conductive GaN(0001) bulk single crystal was used as a rotating disk electrode (RDE) to electrodeposit ZnO thin film employing reduction of O{sub 2}. Although the native surface was rather inactive for the reduction of O{sub 2}, it was activated by dipping in HCl and further by prolonged electrolysis to reduce O{sub 2} in a Zn{sup 2+} free solution. Koutecky-Levich analysis revealed important kinetic constants, such as the standard charge transfer rate constant (k{sup 0}) of 2.4 x 10{sup -14} cm s{sup -1} and the transfer coefficient ({alpha}) of 0.11 at 70 C for the reduction of O{sub 2} at the most activated GaN(0001). Electrodeposition of ZnO from the bath containing ZnCl{sub 2} lead to an epitaxial growth of ZnO in a ZnO[100] parallel GaN[100] alignment as confirmed from the XRD {omega} scan with {theta} adjusted to ZnO(10 anti 12). The higher level of epitaxy was achieved for the more active surfaces of GaN as estimated from narrowing of the full width at half maximum (fwhm) of the peaks in the XRD {omega} -scan. Such films were also fully covering the surface of GaN as found in the SEM observation. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Characterization of the ZnO thin film prepared by single source chemical vapor deposition under low vacuum condition

    Institute of Scientific and Technical Information of China (English)

    DENG; Hong(邓宏); B.; GONG; A.; J.; Petrella; J.; J.; Russell; R.; N.; Lamb

    2003-01-01

    A novel technique is developed for growing high quality ZnO thin films by means of single source chemical vapor deposition (SS CVD) under low vacuum conditions with the precursor of zinc carbamate Zn4O(CO2Net2)6. SEM, AFM and XRD studies show that the resultant thin films have high density, smooth surface, uniform polycrystalline structure and excellent c-axis orientation. XPS investigation indicates that the ZnO films are free of decomposed precursor residues in the bulk. Careful quantitative XPS analysis reveals that the ZnO films are stoichiometric with O/Zn atomic ratio very close to that of ZnO single crystal.

  15. Surface phonon polariton characteristics of wurtzite ZnO thin film grown on silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ng, Sha Shiong; Ooi, Poh Kok; Lee, Sai Cheong; Abdullah, Mat Johar; Hassan, Zainuriah; Hassan, Haslan Abu [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2012-05-15

    In this work, p-polarized far infrared attenuated total reflection (ATR) with Otto configuration technique is employed to study the surface phonon polariton (SPP) characteristics of wurtzite ZnO thin film grown on Si(111) substrate. One prominent dip corresponding to the leaky SPP mode of the ZnO is detected at 532 cm{sup -1}. The obtained result is in good agreement with the calculated ATR spectrum simulated based on the transfer matrix formulation. The origin of the observed dip is verified with the surface polariton dispersion curves based on a three anisotropic layer model (air-ZnO-Si). The results also reveal that the real SPP and the interface phonon polariton modes for this studied structure are barely observable experimentally. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Thermal activation of nitrogen acceptors in ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K.; Talla, K.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2010-06-15

    Nitrogen doping in ZnO is inhibited by spontaneous formation of compensating defects. Perfect control of the nitrogen doping concentration is required, since a high concentration of nitrogen could induce the formation of donor defects involving nitrogen. In this work, the effect of post-growth annealing in oxygen ambient on ZnO thin films grown by Metalorganic Chemical Vapor Deposition, using NO as both oxidant and nitrogen dopant, is studied. After annealing at 700 C and above, low-temperature photoluminescence shows the appearance of a transition at {proportional_to}3.23 eV which is interpreted as pair emission involving a nitrogen acceptor. A second transition at {proportional_to}3.15 eV is also discussed. This work suggests annealing as a potential means for p-type doping using nitrogen (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Thin Solid Films Topical Special Issue on ZnO related transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Jinn P.; Endo, Tamio; Ellmer, Klaus; Gessert, Tim; Ginley, David

    2016-04-01

    World-wide research activities on ZnO and related transparent conductive oxides (TCO) in thin film, nanostructured, and multilayered forms are driven by the vast potential of these materials for optoelectronic, microelectronic, and photovoltaic applications. Renewed interest in ZnO applications is partly stimulated by cost reduction in material processing and device development. One of the most important issues is doping and alloying with Al, Ga, In, Sn, etc. in order to tune properties. When highly doped, these materials are used as transparent-conducting contacts on solar cells, as well as in catalytic, spintronic, and surface acoustic wave devices. Film growth conditions, including substrate type and orientation, growth temperature, deposition rate, and ambient atmosphere, all play important roles in determining structural, electrical, magnetic, and optical properties.

  18. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2016-03-24

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  19. Study of deposition parameters for the fabrication of ZnO thin films using femtosecond laser

    Science.gov (United States)

    Hashmi, Jaweria Zartaj; Siraj, Khurram; Latif, Anwar; Murray, Mathew; Jose, Gin

    2016-08-01

    Femtosecond (fs) pulsed laser deposition (fs-PLD) of ZnO thin film on borosilicate glass substrates is reported in this work. The effect of important fs-PLD parameters such as target-substrate distance, laser pulse energy and substrate temperature on structure, morphology, optical transparency and luminescence of as-deposited films is discussed. XRD analysis reveals that all the films grown using the laser energy range 120-230 μJ are polycrystalline when they are deposited at room temperature in a ~10-5 Torr vacuum. Introducing 0.7 mTorr oxygen pressure, the films show preferred c-axis growth and transform into a single-crystal-like film when the substrate temperature is increased to 100 °C. The scanning electron micrographs show the presence of small nano-size grains at 25 °C, which grow in size to the regular hexagonal shape particles at 100 °C. Optical transmission of the ZnO film is found to increase with an increase in crystal quality. Maximum transmittance of 95 % in the wavelength range 400-1400 nm is achieved for films deposited at 100 °C employing a laser pulse energy of 180 μJ. The luminescence spectra show a strong UV emission band peaked at 377 nm close to the ZnO band gap. The shallow donor defects increase at higher pulse energies and higher substrate temperatures, which give rise to violet-blue luminescence. The results indicate that nano-crystalline ZnO thin films with high crystalline quality and optical transparency can be fabricated by using pulses from fs lasers.

  20. Thermal conductivity of ZnO thin film produced by reactive sputtering

    International Nuclear Information System (INIS)

    ZnO thin films have been produced by reactive sputtering with different oxygen contents in the sputtering gas. As a result of transmission electronic microscopy observation, each film consist of two layers: an interfacial layer close to the substrate, with a thickness of about 200 nm, composed of very fine crystal grains and an upper layer above the interfacial layer, composed of column-shaped grains aligned along the out-plane direction. The grain diameter ranges from 35 to 100 nm depending on the oxygen partial pressure. The in-plane and out-plane thermal conductivity have been measured at room temperature. The out-plane thermal conductivity of the interfacial layer is 2.3 W m-1 K-1, independent on the oxygen partial pressure. The out-plane thermal conductivity of the upper layer is 5.4, 7.1, and 4.0 W m-1 K-1, and the in-plane thermal conductivity 4.86, 6.01, and 2.66 W m-1 K-1, for the O2 30%, 60%, and 90% ZnO film, respectively. Both out-plane and in-plane thermal conductivity decrease with the decrease of grain diameter. The thermal conductance of grain boundary has been estimated with the phonon diffusion mismatch model, and the intrinsic thermal conductivity within ZnO grains has been calculated with a cylinder-structured composite model. The result shows that the thermal conductivity of the ZnO thin films is dominated by the intrinsic thermal conductivity, which is a function of grain size.

  1. Effect of oxygen partial pressure on the behavior of dual ion beam sputtered ZnO thin films

    International Nuclear Information System (INIS)

    Undoped ZnO thin films were grown on p-type Si (1 0 0) substrates at different oxygen partial pressure by dual ion beam sputtering deposition system at a constant growth temperature of 400 °C. The crystallinity, surface morphology, optical, elemental and electrical properties of these ZnO thin films was studied. The minimum value of full-width at half-maximum of the θ-rocking curve obtained from x-ray diffraction of the ZnO (0 0 2) plane, was reported to be 0.1865° from ZnO film grown at 50% of (O2/(O2 + Ar))%. Crystalline property of ZnO films was observed to degrade with the increase in oxygen partial pressure. Photoluminescence measurements demonstrated sharp near-band-edge emission at ∼381 nm at room temperature. X-ray photoelectron spectroscopy study revealed presence of oxygen interstitials and vacancies as point defects in ZnO films. Electrical resistivity of ZnO was found to increase with the increase in oxygen partial pressure. (paper)

  2. Synthesis of PS colloidal crystal templates and ordered ZnO porous thin films by dip-drawing method

    Energy Technology Data Exchange (ETDEWEB)

    Liu Zhifeng [Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials, Tianjin University, Tianjin 300072 (China); Jin Zhengguo [Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials, Tianjin University, Tianjin 300072 (China)]. E-mail: zhgjin@tju.edu.cn; Li Wei [Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials, Tianjin University, Tianjin 300072 (China); Qiu Jijun [Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials, Tianjin University, Tianjin 300072 (China); Zhao Juan [Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials, Tianjin University, Tianjin 300072 (China); Liu Xiaoxin [Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials, Tianjin University, Tianjin 300072 (China)

    2006-05-15

    Polystyrene spheres (PS) were synthesized by an emulsifier-free emulsion polymerization technique and the PS colloidal crystal templates were assembled orderly on clean glass substrates by dip-drawing method from emulsion of PS. Porous ZnO thin films were prepared by filling the ZnO sol into the spaces among the close-packed PS templates and then annealing to remove the PS templates. The effects of ZnO precursor sol concentration and dipping time in sol on the porous structure of the thin films were studied. The results showed an ordered ZnO porous thin film with designed pore size that depended on the sol concentration and PS size could be obtained. And the shrinkage of pore diameter was about 30-43%. X-ray diffraction (XRD) spectra indicated the thin film was wurtzite structure. The transmittance spectrum showed that optical transmittance decreased with the decrease of wavelength, but kept above 80% optical transmittances beyond the wavelength of 550 nm. Optical band gap of the porous ZnO thin film (fired at 500 deg. C) was 3.22 eV.

  3. Physical Property Evaluation of ZnO Thin Film Fabricated by Low-Temperature Process for Flexible Transparent TFT.

    Science.gov (United States)

    Khafe, Adie Bin Mohd; Watanabe, Hiraku; Yamauchi, Hiroshi; Kuniyoshi, Shigekazu; Iizuka, Masaaki; Sakai, Masatoshi; Kudo, Kazuhiro

    2016-04-01

    The usual silicon-based display back planes require fairly high process temperature and thus the development of a low temperature process is needed on flexible plastic substrates. A new type of flexible organic light emitting transistor (OLET) had been proposed and investigated in the previous work. By using ultraviolet/ozone (UV/O3) assisted thermal treatments on wet processed zinc oxide field effect transistor (ZnO-FET), through low-process temperature, ZnO-FETs were fabricated which succeeded to achieve target drain current value and mobility. In this study, physical property evaluation of ZnO was conducted in term of their crystallinity, the increase composition of ZnO formed inside the thin film and the decrease of the carbon impurities originated from aqueous solution of the ZnO itself. The X-ray diffraction (XRD) evaluation showed UV/03 assisted thermal treatment has no obvious effect towards crystallinity of ZnO in the range of low process temperature. Moreover, through X-ray photoelectron spectroscopy (XPS) evaluation and Fourier transform infrared (FT-IR) spectroscopy evaluation, more carbon impurities disappeared from the ZnO thin film and the increase of composition amount of ZnO, when the thin film was subjected to UV/O3 assisted thermal treatment. Therefore, UV/O3 assisted thermal treatment contributed in carbon impurities elimination and accelerate ZnO formation in ZnO thin film, which led to the improvement in the electrical property of ZnO-FET in the low-process temperature. PMID:27451599

  4. Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

    Directory of Open Access Journals (Sweden)

    Rafal Pietruszka

    2014-02-01

    Full Text Available Selected properties of photovoltaic (PV structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon substrates (100 are investigated. PV structures were covered with thin films of Al doped ZnO grown by atomic layer deposition acting as transparent electrodes. The investigated PV structures differ in terms of the shapes and densities of their nanorods. The best response is observed for the structure containing closely-spaced nanorods, which show light conversion efficiency of 3.6%.

  5. High-performance metal–semiconductor–metal UV photodetector based on spray deposited ZnO thin films

    International Nuclear Information System (INIS)

    Highlights: • ZnO based MSM UV photodetector by economical chemical spray pyrolysis technique. • Effect of substrate temperature on properties of ZnO based MSM UV photodetector. • Photoresponse mechanism by optical switching property of ZnO thin film photodetectors. - Abstract: Zinc oxide (ZnO) based metal–semiconductor–metal (MSM) ultraviolet photodetectors at different substrate temperatures were fabricated on glass substrates by economical chemical spray pyrolysis technique and its UV photoresponsivity was measured at room temperature. The samples were characterized with respect to their structural, morphological, and optical properties using various methods such as X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–Vis spectroscopy, transmittance, reflectance etc. The synthesized ZnO thin films were c-axis oriented with hexagonal crystal structure as confirmed from XRD. All deposited films were specular and show high transmittance (∼85%) in visible region with steep fall off at 375 nm. The photoconductive MSM UV photodetector showed relatively high photocurrent (1.3 mA) and fast switching. ZnO thin films exhibited relatively high photoresponsivity (788 A/W) with cut of wavelength ∼375 nm signifying their application as UV detector

  6. Microstructures, optical and electrical properties of In-doped ZnO thin films prepared by sol-gel method

    International Nuclear Information System (INIS)

    ZnO and indium-doped ZnO (IxZO) thin films were prepared on silica-glass substrates by the sol-gel method. The thin films were crystallized at 600 deg. C and 700 deg. C for 1 h in 6.9 x 10-1 Torr under pure O2 atmosphere. The analyzed results were compared to investigate the structural characteristics and optical properties. The surface morphology of the IxZO films was different from that of the ZnO films, and showed a thin overlay structure. In addition, the crystallization of IxZO film was depleted at higher crystallized temperatures. From XRD analysis, the ZnO and IxZO thin films possessed hexagonal structures. Notably, micro-In2O3 phases were observed in the IxZO thin films using EDS. Both of In2O3 phases and the crystallization mechanism not only improved the peeling of structure, but also improved the electrical conductivity of IxZO thin films. For the PL spectrum, the optical property of the IxZO film was raised at a higher crystallization temperature. Although the In2O3 phases reduced the structural defects of IxZO thin film, the optical effect of the residual In3+ was not enhanced completely at higher crystallized temperatures.

  7. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    Science.gov (United States)

    Maldonado, Arturo; Juarez, Héctor; Pacio, Mauricio; Perez, Rene

    2015-01-01

    Summary This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm), which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process. PMID:25977868

  8. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2015-04-01

    Full Text Available This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm, which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  9. Ultrasonic spray pyrolysis growth of ZnO and ZnO:Al nanostructured films: Application to photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Kenanakis, G., E-mail: gkenanak@iesl.forth.gr [Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1385, Vassilika Vouton, 711 10 Heraklion, Crete (Greece); Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece); Katsarakis, N. [Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1385, Vassilika Vouton, 711 10 Heraklion, Crete (Greece); Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece)

    2014-12-15

    Highlights: • Al–ZnO thin films and nanostructures were obtained by ultrasonic spray pyrolysis. • The texture and morphology of the samples depend on the deposition parameters. • The photocatalytic degradation of stearic acid was studied upon UV-A irradiation. - Abstract: Pure and Al-doped ZnO (Al = 1, 3, 5%) nanostructured thin films were grown at 400 °C on glass substrates by ultrasonic spray pyrolysis, a simple, environmental-friendly and inexpensive method, using aqueous solutions as precursors. The structural and morphological characteristics of the samples depend drastically on deposition parameters; ZnO nanostructured films, nanopetals and nanorods were systematically obtained by simply varying the precursor solution and/or the spraying time. Transmittance measurements have shown that all samples are transparent in the visible wavelength region. Finally, the photocatalytic properties of the samples were investigated against the degradation of stearic acid under UV-A light illumination (365 nm); both pure and Al-doped ZnO nanostructured thin films show good photocatalytic activity regarding the degradation of stearic acid, due to their good crystallinity and large surface area.

  10. Ultrasonic spray pyrolysis growth of ZnO and ZnO:Al nanostructured films: Application to photocatalysis

    International Nuclear Information System (INIS)

    Highlights: • Al–ZnO thin films and nanostructures were obtained by ultrasonic spray pyrolysis. • The texture and morphology of the samples depend on the deposition parameters. • The photocatalytic degradation of stearic acid was studied upon UV-A irradiation. - Abstract: Pure and Al-doped ZnO (Al = 1, 3, 5%) nanostructured thin films were grown at 400 °C on glass substrates by ultrasonic spray pyrolysis, a simple, environmental-friendly and inexpensive method, using aqueous solutions as precursors. The structural and morphological characteristics of the samples depend drastically on deposition parameters; ZnO nanostructured films, nanopetals and nanorods were systematically obtained by simply varying the precursor solution and/or the spraying time. Transmittance measurements have shown that all samples are transparent in the visible wavelength region. Finally, the photocatalytic properties of the samples were investigated against the degradation of stearic acid under UV-A light illumination (365 nm); both pure and Al-doped ZnO nanostructured thin films show good photocatalytic activity regarding the degradation of stearic acid, due to their good crystallinity and large surface area

  11. Room temperature pulsed laser deposited ZnO thin films as photoluminiscence gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Padilla-Rueda, D.; Vadillo, J.M. [Department of Analytical Chemistry, Faculty of Science, University of Malaga, UMA Campus Teatinos, s/n, 29071 Malaga (Spain); Laserna, J.J., E-mail: laserna@uma.es [Department of Analytical Chemistry, Faculty of Science, University of Malaga, UMA Campus Teatinos, s/n, 29071 Malaga (Spain)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer Elaboration of functional ZnO thin films by PLD at room temperature is possible. Black-Right-Pointing-Pointer Fluorescence quenching of ZnO thin films may be used for NO{sub 2} sensors. Black-Right-Pointing-Pointer Addition of oxygen during deposition is required to get films of better quality. Black-Right-Pointing-Pointer Films exhibited linear behaviour in the range between 26 and 100 ppm. - Abstract: Zinc oxide thin films with optical sensing capabilities for NO{sub 2} have been elaborated by pulsed laser deposition (PLD) onto glass substrates at room temperature with Nd:YAG laser (1064 nm). Morphology, chemical composition and optical characteristics of the films were evaluated as a function of laser fluence, gas pressure and target-to-substrate distance. Films exhibit excellent morphological and optical (transmittance and photoluminescence) properties. The films have been evaluated as fluorescence sensors for NO{sub 2} in the concentration range between 26 and 200 ppm.

  12. Thickness dependent magnetic transitions in pristine MgO and ZnO sputtered thin films

    Directory of Open Access Journals (Sweden)

    Mukes Kapilashrami

    2010-09-01

    Full Text Available We report a systematic study of the thickness dependency of room temperature ferromagnetism in pristine MgO (~100–500 nm and ZnO (~100–1000 nm thin films deposited by reactive magnetron sputtering technique under the respective identical controlled optimum oxygen ambience. As far as we know this is the first such report on ferromagnetic pure MgO thin films, a result which should be of significance in understanding the functional aspects of magnetic tunnelling characteristics in devices using MgO dielectrics. From the magnetic characterization we observe a distinct variation in the saturation magnetization (MS with increasing film thickness. In the case of MgO thin films MS values vary in the range 0.04–1.58 emu/g (i.e. 0.0012–0.046 μB/unit cell with increasing film thickness showing the highest MS value for the 170 nm thick film. Above this thickness MS is found to decrease and eventually above 420 nm the films show a paramagnetic behaviour followed by the well known diamagnetic property for the bulk (>500 nm. It is obvious that since initially the MS values increase with thickness, there has to be a maximum before the films become diamagnetic at some finite thickness. We also note that the MS values observed for MgO are the highest (more than twice the value observed for ZnO to be reported for such a defect induced ferromagnetism in a pristine oxide. The origin of ferromagnetic order in both the oxides appears to arise from the respective cat-ion vacancies. The discovery of film thickness dependent ferromagnetic order should be very useful in developing multifunctional devices based on the technologically important materials MgO and ZnO.

  13. Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering

    Science.gov (United States)

    Mishra, Abhisek; Mohapatra, Saswat; Gouda, Himanshu Sekhar; Singh, Udai P.

    2016-05-01

    ZnO is a wide-band gap, transparent, polar semiconductor with unparalleled optoelectronic, piezoelectric, thermal and transport properties, which make it the material of choice for a wide range of applications such as blue/UV optoelectronics, energy conversion, transparent electronics, spintronic, plasmonic and sensor devices. We report, three sets of Ga doped Zinc Oxide (GZO) were fabricated in different sputtering power (100 watt, 200 watt and 300 watt). Thereafter films were annealed in nitrogen ambient for 30 minutes at 400° C. From the optical absorption spectroscopy it was found that pristine films are showing a 75% transmittance in the visible region of light and it increases after the annealing. However, for 300 W grown sample opposite trend has been achieved for the post annealed sample. X-ray diffraction pattern of all the pristine and annealed films showed a preferable growth orientation at (002) phase. Some other weak peaks were also appeared in different angle which indicates that films are polycrystalline in nature. XRD data also reveals that crystallite size increases with sputtering power up to 200 W and thereafter it decreases with the deposition power. It also noted that the crystallite size of the annealed film increases with compare to the non annealed films. At room temperature an enhancement in electrical properties of Ga doped ZnO thin films was noted for the annealed ZnO films except for the film deposited at 300 watt. More significantly, it was found that annealed thin films showed the resistivity in the range of 10-3 ˜ 10-4 ohm-cm. Such a high optical transmittance and conducting zinc-oxide thin film can be used as a window layer in solar cell.

  14. Photoelectrocatalytic decolorization and degradation of textile effluent using ZnO thin films.

    Science.gov (United States)

    Sapkal, R T; Shinde, S S; Mahadik, M A; Mohite, V S; Waghmode, T R; Govindwar, S P; Rajpure, K Y; Bhosale, C H

    2012-09-01

    Zinc oxide (ZnO) thin films have been successfully deposited onto fluorine doped tin oxide coated glass at substrate temperature of 400 °C and used as electrode in photoelectrocatalytic reactor. The untreated textile effluent was circulated through photoelectrocatalytic reactor under UVA illumination for the decolorization and degradation. Textile effluent was decolorized by 93% within 3h at room temperature with significant reduction in COD (69%). High performance liquid chromatography (HPLC) and Fourier transform infrared spectroscopy (FTIR) analysis of samples before and after decolorization confirmed the degradation of dyes molecules from textile effluent into simpler oxidizable products. Phytotoxicity study revealed reduction in toxic nature of textile effluent after treatment.

  15. Photoelectrocatrocatalytic hydrolysis of starch by using sprayed ZnO thin films

    Science.gov (United States)

    Sapkal, R. T.; Shinde, S. S.; Rajpure, K. Y.; Bhosale, C. H.

    2013-05-01

    Thin films of zinc oxide have been deposited onto glass/FTO substrates at optimized 400 °C by using a chemical spray pyrolysis technique. Deposited films are character photocatalytic activity by using XRD, an SEM, a UV-vis spectrophotometer, and a PEC single-cell reactor. Films are polycrystalline and have a hexagonal (wurtzite) crystal structure with c-axis (002) orientation growth perpendicular to the substrate surface. The observed direct band gap is about 3.22 eV for typical films prepared at 400 °C. The photocatalytic activity of starch with a ZnO photocatalyst has been studied by using a novel photoelectrocatalytic process.

  16. Photoelectrocatalytic decolorization and degradation of textile effluent using ZnO thin films.

    Science.gov (United States)

    Sapkal, R T; Shinde, S S; Mahadik, M A; Mohite, V S; Waghmode, T R; Govindwar, S P; Rajpure, K Y; Bhosale, C H

    2012-09-01

    Zinc oxide (ZnO) thin films have been successfully deposited onto fluorine doped tin oxide coated glass at substrate temperature of 400 °C and used as electrode in photoelectrocatalytic reactor. The untreated textile effluent was circulated through photoelectrocatalytic reactor under UVA illumination for the decolorization and degradation. Textile effluent was decolorized by 93% within 3h at room temperature with significant reduction in COD (69%). High performance liquid chromatography (HPLC) and Fourier transform infrared spectroscopy (FTIR) analysis of samples before and after decolorization confirmed the degradation of dyes molecules from textile effluent into simpler oxidizable products. Phytotoxicity study revealed reduction in toxic nature of textile effluent after treatment. PMID:22727863

  17. Influence of pH on ZnO nanocrystalline thin films prepared by sol–gel dip coating method

    Indian Academy of Sciences (India)

    K Sivakumar; V Senthil Kumar; N Muthukumarasamy; M Thambidurai; T S Senthil

    2012-06-01

    ZnO nanocrystalline thin films have been prepared on glass substrates by sol–gel dip coating method. ZnO thin films have been coated at room temperature and at four different pH values of 4, 6, 8 and 10. The X-ray diffraction pattern showed that ZnO nanocrystalline thin films are of hexagonal structure and the grain size was found to be in the range of 25–45 nm. Scanning electron microscopic images show that the surface morphology improves with increase of pH values. TEM analysis reveals formation of ZnO nanocrystalline with an average grain size of 44 nm. The compositional analysis results show that Zn and O are present in the sample. Optical band studies show that the films are highly transparent and exhibit a direct bandgap. The bandgap has been found to lie in the range of 3.14–3.32 eV depending on pH suggesting the formation of ZnO nanocrystalline thin films.

  18. Electrical and optical properties of p-type codoped ZnO thin films prepared by spin coating technique

    Science.gov (United States)

    Pathak, Trilok Kumar; Kumar, Vinod; Swart, H. C.; Purohit, L. P.

    2016-03-01

    Undoped, doped and codoped ZnO thin films were synthesized on glass substrates using a spin coating technique. Zinc acetate dihydrate, ammonium acetate and aluminum nitrate were used as precursor for zinc, nitrogen and aluminum, respectively. X-ray diffraction shows that the thin films have a hexagonal wurtzite structure for the undoped, doped and co-doped ZnO. The transmittance of the films was above 80% and the band gap of the film varied from 3.20 eV to 3.24 eV for undoped and doped ZnO. An energy band diagram to describe the photoluminescence from the thin films was also constructed. This diagram includes the various defect levels and possible quasi-Fermi levels. A minimum resistivity of 0.0834 Ω-cm was obtained for the N and Al codoped ZnO thin films with p-type carrier conductivity. These ZnO films can be used as a window layer in solar cells and in UV lasers.

  19. Organic photovoltaic cells based on ZnO thin film electrodes.

    Science.gov (United States)

    Ghica, C; Ion, L; Epurescu, G; Nistor, L; Antohe, S; Dinescu, M

    2010-02-01

    Due to its wide band-gap (ca. 3.4 eV), ZnO is a possible candidate material to be used as transparent electrode for a new class of photovoltaic (PV) cells. Also, an increased interest for the photovoltaic properties of several organic monomers and polymers (merocyanines, phthalocyanines and porphyrins) was noticed, because of their high optical absorption in the visible region of the spectrum allowing them to be used as potential inexpensive materials for solar cells. Preparation and properties of CuPc (copper phthalocyanine) based photovoltaic cells using ZnO thin films as transparent conductor electrodes are presented in this paper. ZnO layers are grown by pulsed laser deposition, while the organic layers are obtained by thermal evaporation. Structural characterization is performed by electron microscopy. Optical and transport properties of the mutilayered structures are obtained by electrical and spectro-photometric measurements. The influence of the ZnO-polymer interface on the external quantum efficiency (EQE) of the photovoltaic cell is clearly evidenced by our measurements.

  20. Optoelectronics and formaldehyde sensing properties of tin-doped ZnO thin films

    Science.gov (United States)

    Prajapati, C. S.; Kushwaha, Ajay; Sahay, P. P.

    2013-11-01

    Sn-doped ZnO thin films were deposited on clean glass substrates using the chemical spray pyrolysis technique. XRD analyses confirm stable ZnO hexagonal wurtzite structure of the films with crystallite size in the range of 20-28 nm. The surface roughness of the films increases on Sn doping, which favors to higher adsorption of oxygen species on the film surface, resulting in higher gas response. Optical studies reveal that the band gap decreases on Sn doping. All the films show near band edge emission, and on Sn doping the luminescence peak intensity has been found to increase. Photocurrent in the 1.5 at.% doped film enhances about three times to that observed in the undoped ZnO film. Among all the films examined, the 1.5 at.% Sn-doped film exhibits the maximum response (˜94.5 %) at the operating temperature of 275 °C for 100 ppm concentration of formaldehyde, which is much higher than the response (˜35 %) in the undoped film. The gas response of the film is attributed to the chemisorption of oxygen on the film surface and the subsequent reaction between the adsorbed oxygen species and the formaldehyde molecules.

  1. Preparation of cadmium-doped ZnO thin films by SILAR and their characterization

    Indian Academy of Sciences (India)

    S Mondal; P Mitra

    2012-10-01

    Cadmium-doped zinc oxide (Cd : ZnO) thin films were deposited from sodium zincate bath following a chemical dipping technique called successive ion layer adsorption and reaction (SILAR). Structural characterization by X-ray diffraction reveals that polycrystalline nature of the films increases with increasing cadmium incorporation. Particle size evaluated using X-ray line broadening analysis shows decreasing trend with increasing cadmium impurification. The average particle size for pure ZnO is 36.73nm and it reduces to 29.9 nm for 10% Cd:ZnO, neglecting strain broadening. The strong preferred c-axis orientation is lost due to cadmium doping and degree of polycrystallinity of the films also increases with increasing Cd incorporation. Incorporation of cadmium was confirmed from elemental analysis using EDX. The optical bandgap of the films decreases with increasing Cd dopant. The value of fundamental absorption edge is 3.18 eV for pure ZnO and it decreases to 3.11 eV for 10% Cd:ZnO.

  2. ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR

    Directory of Open Access Journals (Sweden)

    Martin Mikulics

    2012-07-01

    Full Text Available Presented experiments utilize methanolic solution of zinc acetyl-acetonate as a precursor and sapphire (001 as a substrate for deposition of thin films of ZnO. The X-ray diffraction analysis revealed polycrystalline character of prepared films with preferential growth orientation along c-axis. The roughness of prepared films was assessed by AFM microscopy and represented by roughness root mean square (RMS value in range of 1.8 - 433 nm. The surface morphology was mapped by scanning electron microscopy showing periodical structure with several local defects. The optical transmittance spectrum of ZnO films was measured in wavelength range of 200-1000 nm. Prepared films are transparent in visible range with sharp ultra-violet cut-off at approximately 370 nm. Raman spectroscopy confirmed wurtzite structure and the presence of compressive stress within its structure as well as the occurrence of oxygen vacancies. The four-point Van der Pauw method was used to study the transport prosperities. The resistivity of presented ZnO films was found 8 × 10–2 Ω cm with carrier density of 1.3 × 1018 cm–3 and electron mobility of 40 cm2 V–1 s–1.

  3. Synthesis of ZnO Nanowires and Their Photovoltaic Application: ZnO Nanowires/AgGaSe2 Thin Film Core-Shell Solar Cell

    Directory of Open Access Journals (Sweden)

    Elif Peksu

    2015-01-01

    Full Text Available In this investigation, hydrothermal technique was employed for the synthesis of well-aligned dense arrays of ZnO nanowires (NWs on a wide range of substrates including silicon, soda-lime glass (SLG, indium tin oxide, and polyethylene terephthalate (PET. Results showed that ZnO NWs can be successfully grown on any substrate that can withstand the growth temperature (~90°C and precursor solution chemicals. Results also revealed that there was a strong impact of growth time and ZnO seed layer deposition route on the orientation, density, diameter, and uniformity of the synthesized nanowires. A core-shell n-ZnO NWs/p-AgGaSe2 (AGS thin film solar cell was fabricated as a device application of synthesized ZnO nanowires by decoration of nanowires with ~700 nm thick sputtering deposited AGS thin film layer, which demonstrated an energy conversion efficiency of 1.74% under 100 mW/cm2 of simulated solar illumination.

  4. Near-infrared optical constants and optical polarization properties of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Khoshman, J.M., E-mail: khoshman@ahu.edu.jo [Department of Physics, Al-Hussein Bin Talal University, Maan 71111 (Jordan); Manda, A.A. [College of Engineering, University of Dammam, Dammam 31451 (Saudi Arabia); Kordesch, M.E. [Department of Physics and Astronomy, Ohio University, Athens, OH 45701 (United States)

    2015-03-02

    The optical characteristics of ZnO thin films deposited on Si (111) and quartz at temperature < 50 °C using reactive RF sputtering deposition were examined within the near-infrared (NIR) region. From the X-ray diffraction observations, it was found that the films show a polycrystalline structure. X-ray photoelectron spectroscopy analysis shows the chemical bonding states of zinc and oxygen in the surface of the films and confirms the formation of Zn–O bonds. The field emission scanning electron microscopy and the atomic force microscopy images of the films shown an almost uniform distribution and the surfaces are smooth with grains of the order of 40–60 nm. The average surface roughness was in the range of 3.15–24.33 nm. Over a wavelength range 700–2500 nm, the optical constants of the films were obtained by analysis of the measured ellipsometric spectra using the Cauchy–Urbach model. Refractive indices and extinction coefficients of the ZnO films were determined to be in the range n = 1.65–1.73 and κ = 0.0060–0.029, respectively. Also, the s- and p-polarized optical properties (transmittance and reflectance) of the films have been measured at different angles of incidence in the UV–Vis–NIR spectral range. In addition, calculations have been carried out in order to determine the optical absorptance by using the conservation of energy. The films reveal a high transmittance (85%–95%), low reflectance (5%–15%), and very low absorptance (< 1%) at normal incidence. This means that the sputtered polycrystalline ZnO films could be good candidates for antireflection (AR) optical coatings. - Highlights: • The ZnO films exhibited a polycrystalline structure. • The as-deposited ZnO films are homogeneous and continuous. • The Cauchy–Urbach model can represent sufficiently the films in the NIR range. • The films reveal a high transmittance, low reflectance and very low absorptance. • Polycrystalline ZnO films could be good candidates for

  5. Production of ZnO and CdO-ZnO thin Films by Extraction-Pyrolytic Method

    Science.gov (United States)

    Cvetkovs, A.; Kiselova, O.; Rogulis, U.; Serga, V.; Ignatans, R.

    2016-06-01

    The extraction-pyrolytic method has been applied to produce the ZnO and CdO-ZnO thin films on glass and quartz glass substrates. According to X-ray diffraction measurements, the ZnO and CdO phases have been produced with an average size of crystallites about 8-42 nm in the films. The thickness of the layers measured by a profilometer has been up to 150 nm. The surface morphology measurements show that the surface of the films may be rough and non-continuous. The SEM results confirm the dependence between the preparation procedure and the quality of the thin film.

  6. Application of Thin ZnO ALD Layers in Fiber-Optic Fabry-Pérot Sensing Interferometers

    OpenAIRE

    Daria Majchrowicz; Marzena Hirsch; Paweł Wierzba; Michael Bechelany; Roman Viter; Małgorzata Jędrzejewska‑Szczerska

    2016-01-01

    In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28) segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD). Measurements were performed with the interferometer illuminated by two broadband sources operating at 1300 nm and 1550 nm. Reflected interference signal was acqui...

  7. Mixing ALD/MLD-grown ZnO and Zn-4-aminophenol layers into various thin-film structures.

    Science.gov (United States)

    Sundberg, Pia; Sood, Anjali; Liu, Xuwen; Karppinen, Maarit

    2013-11-14

    Building 2D inorganic-organic hybrids by combining inorganic and organic constituents with molecular-layer precision is an attractive approach to fabricate novel materials with a tailored combination of properties from both entities. Here we demonstrate the potential of the combined atomic and molecular layer deposition (ALD/MLD) technique for the state-of-the-art synthesis of such materials and to fabricate both homogeneous thin-film mixtures and nanolaminates of ZnO and the Zn-4-aminophenol inorganic-organic hybrid. The thin films are deposited by varying the number of precursor cycles during the depositions. Diethyl zinc and 4-aminophenol (AP) are used as precursors for the Zn-AP hybrid depositions, and diethyl zinc and water for the ZnO depositions. The characterization of the mixed Zn-AP and ZnO films reveals that crystallinity, density, surface roughness, chemical stability, hardness and contact modulus are sensitively altered by even a minor insertion of Zn-AP hybrid into the ZnO structure. Fabrication of Zn-AP + ZnO nanolaminates with different thicknesses of the Zn-AP and ZnO layers provides us with an even better way to control the hardness and contact modulus, and also to enhance the chemical stability of the films.

  8. Influence of hydrogen on the structure and stability of ultra-thin ZnO on metal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bieniek, Bjoern [Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin (Germany); Hofmann, Oliver T. [Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin (Germany); Institut für Festkörperphysik, TU Graz, 8010 Graz (Austria); Rinke, Patrick, E-mail: patrick.rinke@aalto.fi [Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin (Germany); School of Science, Aalto University, FI-00076 Aalto (Finland)

    2015-03-30

    We investigate the atomic and electronic structure of ultra-thin ZnO films (1 to 4 layers) on the (111) surfaces of Ag, Cu, Pd, Pt, Ni, and Rh by means of density-functional theory. The ZnO monolayer is found to adopt an α-BN structure on the metal substrates with coincidence structures in good agreement with experiment. Thicker ZnO layers change into a wurtzite structure. The films exhibit a strong corrugation, which can be smoothed by hydrogen (H) adsorption. An H over-layer with 50% coverage is formed at chemical potentials that range from low to ultra-high vacuum H{sub 2} pressures. For the Ag substrate, both α-BN and wurtzite ZnO films are accessible in this pressure range, while for Cu, Pd, Pt, Rh, and Ni wurtzite films are favored. The surface structure and the density of states of these H passivated ZnO thin films agree well with those of the bulk ZnO(0001{sup ¯})-2×1-H surface.

  9. Characterization of piesoelectric ZnO thin films and the fabrication of piezoelectric micro-cantilevers

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Raegan Lynn

    2005-08-01

    In Atomic Force Microscopy (AFM), a microcantilever is raster scanned across the surface of a sample in order to obtain a topographical image of the sample's surface. In a traditional, optical AFM, the sample rests on a bulk piezoelectric tube and a control loop is used to control the tip-sample separation by actuating the piezo-tube. This method has several disadvantages--the most noticeable one being that response time of the piezo-tube is rather long which leads to slow imaging speeds. One possible solution aimed at improving the speed of imaging is to incorporate a thin piezoelectric film on top of the cantilever beam. This design not only improves the speed of imaging because the piezoelectric film replaces the piezo-tube as an actuator, but the film can also act as a sensor. In addition, the piezoelectric film can excite the cantilever beam near its resonance frequency. This project aims to fabricate piezoelectric microcantilevers for use in the AFM. Prior to fabricating the cantilevers and also part of this project, a systematic study was performed to examine the effects of deposition conditions on the quality of piezoelectric ZnO thin films deposited by RF sputtering. These results will be presented. The deposition parameters that produced the highest quality ZnO film were used in the fabrication of the piezoelectric cantilevers. Unfortunately, the fabricated cantilevers warped due to the intrinsic stress of the ZnO film and were therefore not usable in the AFM. The complete fabrication process will be detailed, the results will be discussed and reasons for the warping will be examined.

  10. Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring

    Energy Technology Data Exchange (ETDEWEB)

    Nomenyo, K.; Kostcheev, S.; Lérondel, G. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Gadallah, A.-S. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Department of Laser Sciences and Interactions, National Institute of Laser Enhanced Sciences, Cairo University, Giza (Egypt); Rogers, D. J. [Nanovation, 8, route de Chevreuse, 78117 Châteaufort (France)

    2014-05-05

    Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguiding is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.

  11. A comparison between different ohmic contacts for ZnO thin films

    International Nuclear Information System (INIS)

    There are several metals that form ohmic contacts for ZnO thin films, such as copper, aluminum and silver. The aim of this work is to make a comparison between these ohmic contacts. To achieve this purpose, polycrystalline ZnO thin films were prepared by the spray pyrolysis technique, and characterized by the I–V measurements at room temperature. Two strips of each metal were thermally evaporated on the surface of the film and measurements were first recorded in the dark and room light, then in the dark before and after annealing for Al, which was found to be the best in the set. Films with aluminum contacts gave the smallest resistivity, best ohmicity and they are slightly affected by light as required. On the other hand, copper was found to be the worst, and films with copper contacts gave the largest resistivity, worst ohmicity and they are the most affected by light. Annealing improved the aluminum contacts due to alloying and doping. (paper)

  12. Auger and photoluminescence analysis of ZnO nanowires grown on AlN thin film

    Energy Technology Data Exchange (ETDEWEB)

    Yousefi, Ramin, E-mail: yousefi.ramin@gmail.com [Solid State Laboratory, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Kamaluddin, Burhanuddin [Solid State Laboratory, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ghoranneviss, Mahmood; Hajakbari, Fatemeh [Plasma Physics Research Center, Science and Research Campus, Islamic Azad University, 14665-678 Tehran (Iran, Islamic Republic of)

    2009-05-15

    ZnO nanowires were grown on AlN thin film deposited on the glass substrates using a physical vapor deposition method in a conventional tube furnace without introducing any catalysts. The temperature of the substrates was maintained between 500 and 600 deg. C during the growth process. The typical average diameters of the obtained nanowires on substrate at 600 and 500 deg. C were about 57 and 22 nm respectively with several micrometers in length. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into the ZnO nanowires for the sample grown at 600 deg. C. Photoluminescence of the nanowires exhibits appearance of two emission bands, one related to ultraviolet emission with a strong peak at 380-382 nm, and the other related to deep level emission with a weak peak at 503-505 nm. The ultraviolet peak of the nanowires grown at 500 deg. C was blue shifted by 2 nm compared to those grown at 600 deg. C. This shift could be attributed to surface effect.

  13. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  14. Substrate Temperature Effects on Room Temperature Sensing Properties of Nanostructured ZnO Thin Films.

    Science.gov (United States)

    Reddy, Jonnala Rakesh; Mani, Ganesh Kumar; Shankar, Prabakaran; Rayappan, John Bosco Balaguru

    2016-01-01

    Zinc oxide (ZnO) thin films were deposited on glass substrates using chemical spray pyrolysis technique at different substrate temperatures such as 523, 623 and 723 K. X-ray diffraction (XRD) patterns confirmed the formation of polycrystalline films with hexagonal wurtzite crystal structure and revealed the change in preferential orientation of the crystal planes. Scanning electron micrographs showed the formation of uniformly distributed spherical shaped grains at low deposition temperature and pebbles like structure at the higher temperature. Transmittance of 85% was observed for the film deposited at 723 K. The band gap of the films was found to be increased from 3.15 to 3.23 eV with a rise in deposition temperature. The electrical conductivity of the films was found to be improved with an increase in substrate temperature. Surface of ZnO thin films deposited at 523 K, 623 K and 723 K were found to be hydrophobic with the contact angles of 92°, 105° and 128° respectively. The room temperature gas sensing characteristics of all the films were studied and found that the film deposited at 623 K showed a better response towards ammonia vapour. PMID:27398478

  15. Synthesis of nano ZnO thin film on Al foil by rf glow discharge plasma and its effect on E. coli and P. aeruginosa

    Energy Technology Data Exchange (ETDEWEB)

    Panigrahi, Jagannath; Nayak, Bijan B.; Behera, Debadhyan; Subudhi, Umakanta; Acharya, Bhabani S. [CSIR - Institute of Minerals and Materials Technology, Bhubaneswar (India)

    2012-09-15

    Nano ZnO thin films were deposited on thin Al foils by a rf glow discharge plasma method in which sublimed zinc acetate vapor (precursor) reacted with oxygen plasma inside a low-pressure reactor. The films were microstructurally characterized using XRD, TEM, FESEM, optical reflectance and micro-Raman spectroscopy methods. In view of the good scope of ZnO coating in food packaging, the antibacterial activity in the ZnO thin films was studied by exposing the films to E. coli and P. aeruginosa for up to 8 h. Bacterial cell inhibition of up to 98-99 % was observed in the thin films. (orig.)

  16. Planar waveguide laser in Er/Al-doped germanosilicate

    DEFF Research Database (Denmark)

    Guldberg-Kjær, Søren Andreas; Hübner, Jörg; Kristensen, Martin;

    1999-01-01

    A singlemode DBR laser is demonstrated in an Er/Al-doped germanosilicate planar waveguide. 0.4 mW of output power has been obtained at 1.553 mu m using internal Bragg reflectors produced by UV-induced index modulations.......A singlemode DBR laser is demonstrated in an Er/Al-doped germanosilicate planar waveguide. 0.4 mW of output power has been obtained at 1.553 mu m using internal Bragg reflectors produced by UV-induced index modulations....

  17. Fabrication and characterization of ZnO nanowires by wet oxidation of Zn thin film deposited on Teflon substrate

    Science.gov (United States)

    Farhat, O. F.; Halim, M. M.; Abdullah, M. J.; Ali, M. K. M.; Ahmed, Naser M.; Bououdina, M.

    2015-10-01

    In this study, ZnO nanowires (NWs) were successfully grown for the first time on to Teflon substrate by a wet oxidation of a Zn thin film coated by RF sputtering technique. The sputtered Zn thin film was oxidized at 100 °C for 5 h under water-vapour using a horizontal furnace. This oxidation process transformed Zn thin film into ZnO with wire-like nanostructure. XRD analysis confirms the formation of single nanocrystalline ZnO phase having a low compressive strain. FESEM observations reveal high density of ZnO NWs with diameter ranging from 34 to 52 nm and length about 2.231 μm, which are well distributed in different direction. A flexible ZnO NWs-based metal-semiconductor-metal UV photodetector was fabricated. Photo-response and sensitivity measurements under low power illumination (375 nm, 1.5 mW/cm2) showed a high sensitivity of 2050%, which can be considered a relatively fast response and baseline recovery for UV detection.

  18. Co doping induced structural and optical properties of sol–gel prepared ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gungor, Ebru, E-mail: egungor@mehmetakif.edu.tr [Energy Systems Engineering Department, Mehmet Akif Ersoy University, Burdur 15030 (Turkey); Gungor, Tayyar [Energy Systems Engineering Department, Mehmet Akif Ersoy University, Burdur 15030 (Turkey); Caliskan, Deniz [Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey); Ceylan, Abdullah [SNTG Laboratory, Physics Engineering Department, Hacettepe University, Ankara 06800 (Turkey); Ozbay, Ekmel [Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey)

    2014-11-01

    Highlights: • Transparent metal oxides are related to ZnO. • Optical transmission spectrum of Co doped ZnO thin films. • Determination of optical band gap using photoluminescence measurement. • Deposition thin film by using ultrasonic spray pyrolysis. - Abstract: The preparation conditions for Co doping process into the ZnO structure were studied by the ultrasonic spray pyrolysis technique. Structural and optical properties of the Co:ZnO thin films as a function of Co concentrations were examined. It was observed that hexagonal wurtzite structure of ZnO is dominant up to the critical value, and after the value, the cubic structural phase of the cobalt oxide appears in the X-ray diffraction patterns. Every band-edge of Co:ZnO films shifts to the lower energies and all are confirmed with the PL measurements. Co substitution in ZnO lattice has been proved by the optical transmittance measurement which is observed as the loss of transmission appearing in specific region due to Co{sup 2+} characteristic transitions.

  19. Structural, optical and electrical properties of ZnO thin films prepared by spray pyrolysis: Effect of precursor concentration

    Indian Academy of Sciences (India)

    F Zahedi; R S Dariani; S M Rozati

    2014-05-01

    ZnO thin films have been prepared using zinc acetate precursor by spray pyrolytic decomposition of zinc acetate on glass substrates at 450 °C. Effect of precursor concentration on structural and optical properties has been investigated. ZnO films are polycrystalline with (002) plane as preferential orientation. The optical transmission spectrum shows that transmission increases with decrease in the concentration and the maximum transmission in visible region is about 95% for ZnO films prepared with 0.1 M. The direct band-gap value decreases from 3.37 to 3.19 eV, when the precursor concentration increases from 0.1 to 0.4 M. Photoluminescence spectra at room temperature show an ultraviolet (UV) emission at 3.26 eV and two visible emissions at 2.82 and 2.38 eV. Lowest resistivity is obtained at 2.09 cm for 0.3 M. The current–voltage characteristic of the ZnO thin films were measured in dark and under UV illumination. The values of photocurrent and photoresponsivity at 5 V are increased with increase in precursor concentration and reaches to maximum value of 1148 A and 0.287 A/W, respectively which is correlated to structural properties of ZnO thin films.

  20. Effect of different sol concentrations on the properties of nanocrystalline ZnO thin films grown on FTO substrates by sol-gel spin-coating

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ikhyun; Kim, Younggyu; Nam, Giwoong; Kim, Dongwan; Park, Minju; Kim, Haeun; Lee, Wookbin; Leem, Jaeyoung [Inje University, Gimhae (Korea, Republic of); Kim, Jongsu [Yeungnam University, Gyeongsan (Korea, Republic of); Kim, Jin Soo [Chonbuk National University, Jeonju (Korea, Republic of)

    2014-08-15

    Nanocrystalline ZnO thin films grown on fluorine-doped tinoxide (FTO) substrates were fabricated using the spin-coating method. The structural and the optical properties of the ZnO thin films prepared using different sol concentrations were investigated by using field-emission scanning electron microscopy (FE-SEM), X-ray diffractometry (XRD), photoluminescence (PL) measurements, and ultraviolet-visible (UV-vis) spectrometry. The surface morphology of the ZnO thin films, as observed in the SEM images, exhibited a mountain-chain structure. XRD results indicated that the thin films were preferentially orientated along the direction of the c-axis and that the grain size of the ZnO thin films increased with increasing sol concentration. The PL spectra showed a strong ultraviolet emission peak at 3.22 eV and a broad orange emission peak at 2.0 eV. The intensities of deep-level emission (DLE) gradually increased with increasing sol concentration from 0.4 to 1.0 M. The transmittance spectra of the ZnO thin films showed that the ZnO thin films were transparent (∼85%) in the visible region and exhibited sharp absorption edges at 375 nm. Thus, The Urbach energy of ZnO thin films decreased with increasing sol concentration.

  1. The Annealing Effects of ZnO Thin Films on Characteristic Parameters of Au/ZnO Schottky Contacts on n-Si

    Directory of Open Access Journals (Sweden)

    A. Toprak

    2012-03-01

    Full Text Available 200 nm ZnO thin films have been grown on n type Silicon substrates by DC sputtering technique. One of the thin films has been annealed at 300 ºC for 45 minutes. The Au front contacts on ZnO thin films have been formed by evaporation of Au metal by means of shadow mask. It has been seen that the rectification ratio of Au/ZnO device obtained using annealed ZnO thin film is higher than the one obtained using unannealed ZnO thin film. The characteristic parameters of Au/ZnO junctions such as ideality factor, barrier height and series resistance obtained by current-voltage (I-V measurements of the structures at room temperature and in dark have been compared with each others. 200 nm ZnO thin films have been grown on n type Silicon substrates by DC sputtering technique. One of the thin films has been annealed at 300 ºC for 45 minutes. The Au front contacts on ZnO thin films have been formed by evaporation of Au metal by means of shadow mask. It has been seen that the rectification ratio of Au/ZnO device obtained using annealed ZnO thin film is higher than the one obtained using unannealed ZnO thin film. The characteristic parameters of Au/ZnO junctions such as ideality factor, barrier height and series resistance obtained by current-voltage (I-V measurements of the structures at room temperature and in dark have been compared with each others. 200 nm ZnO thin films have been grown on n type Silicon substrates by DC sputtering technique. One of the thin films has been annealed at 300 ºC for 45 minutes. The Au front contacts on ZnO thin films have been formed by evaporation of Au metal by means of shadow mask. It has been seen that the rectification ratio of Au/ZnO device obtained using annealed ZnO thin film is higher than the one obtained using unannealed ZnO thin film. The characteristic parameters of Au/ZnO junctions such as ideality factor, barrier height and series resistance obtained by current-voltage (I-V measurements of the structures at

  2. Quality improvement of ZnO thin layers overgrown on Si(100 substrates at room temperature by nitridation pretreatment

    Directory of Open Access Journals (Sweden)

    Peng Wang

    2012-06-01

    Full Text Available To improve the quality of ZnO thin film overgrown on Si(100 substrate at RT (room temperature, the Si(100 surface was pretreated with different methods. The influence of interface on the overgrown ZnO layers was investigated by atomic force microscopy, photoluminescence and X-ray diffraction. We found that the nitridation pretreatment could significantly improve the quality of RT ZnO thin film through two-fold effects: one was to buffer the big lattice mismatch and ease the stress resulted from heterojunction growth; the other was to balance the interface charge, block the symmetric inheritance from the cubic Si (100 substrate and thus restrain the formation of zincblende phase.

  3. Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact

    Directory of Open Access Journals (Sweden)

    U.S. Mbamara

    2016-06-01

    Full Text Available Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS and X-ray Diffraction (XRD. The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-face surfaces were examined to assess the wear dimension and failure mechanism. Both friction behavior and wear (in the ball counter-face were observed to be dependent on the crystallinity and thickness of the thin film coatings.

  4. Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

    Science.gov (United States)

    Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood

    2015-09-01

    We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

  5. Study of p-type ZnO and MgZnO Thin Films for Solid State Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jianlin [University of California, Riverside

    2016-03-31

    This project on study of p-type ZnO and MgZnO thin films for solid state lighting was carried out by research group of Prof. Jianlin Liu of UCR during the four-year period between August 2011 and July 2015. Tremendous progress has been made on the proposed research. This final report summarizes the important findings.

  6. Study of p-type ZnO and MgZnO Thin Films for Solid State Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jianlin [Univ. of California, Riverside, CA (United States)

    2015-07-31

    This project on study of p-type ZnO and MgZnO thin films for solid state lighting was carried out by research group of Prof. Jianlin Liu of UCR during the four-year period between August 2011 and July 2015. Tremendous progress has been made on the proposed research. This final report summarizes the important findings.

  7. Preparation and photocatalytic activity of Cu-doped ZnO thin films prepared by the sol-gel method

    International Nuclear Information System (INIS)

    Cu-doped ZnO thin films were fabricated on glass substrates by the sol-gel dip-coating method. All samples were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The grain size and film thickness of the Cu-doped ZnO thin film decreased as a function of the Cu concentrations. All prepared films showed a very high transmittance above 89% in the visible region (400-800 nm). Two oxidation states of Cu in +1 and +2 were identified in the ZnO thin film by X-ray photoelectron spectroscopy (XPS). Their photocatalytic activities were investigated by the degradation of methylene blue (MB) dye under blacklight fluorescent tubes. The film prepared from the Zn2+ solution containing 0.5 mol% of copper ions had the highest photocatalytic activity. The photocatalytic degradation of methylene blue solution as a function of the initial concentrations was evaluated according to the Langmuir-Hinshelwood model. The reaction rate (k) and adsorption equilibrium constant (K) over 1 cm2 of 0.5 mol% Cu-doped ZnO thin film are 15.92 μM h-1 and 0.049 μM-1, respectively.

  8. Preparation and photocatalytic activity of Cu-doped ZnO thin films prepared by the sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Jongnavakit, P. [Department of Chemistry and Center for Innovation in Chemistry, Faculty of Science, Prince of Songkla University, Hat Yai, Songkhla 90112 (Thailand); Amornpitoksuk, P., E-mail: ampongsa@yahoo.com [Department of Chemistry and Center for Innovation in Chemistry, Faculty of Science, Prince of Songkla University, Hat Yai, Songkhla 90112 (Thailand); NANOTEC Center of Excellence at Prince of Songkla University (CENE), Hat Yai, Songkhla 90112 (Thailand); Suwanboon, S. [Department of Materials Science and Technology, Faculty of Science, Prince of Songkla University, Hat Yai, Songkhla 90112 (Thailand); NANOTEC Center of Excellence at Prince of Songkla University (CENE), Hat Yai, Songkhla 90112 (Thailand); Ndiege, N. [Nanoscience and Nanotechnology Institute, W181 Chemistry Building, University of Iowa, Iowa City 52242, IA (United States)

    2012-08-01

    Cu-doped ZnO thin films were fabricated on glass substrates by the sol-gel dip-coating method. All samples were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The grain size and film thickness of the Cu-doped ZnO thin film decreased as a function of the Cu concentrations. All prepared films showed a very high transmittance above 89% in the visible region (400-800 nm). Two oxidation states of Cu in +1 and +2 were identified in the ZnO thin film by X-ray photoelectron spectroscopy (XPS). Their photocatalytic activities were investigated by the degradation of methylene blue (MB) dye under blacklight fluorescent tubes. The film prepared from the Zn{sup 2+} solution containing 0.5 mol% of copper ions had the highest photocatalytic activity. The photocatalytic degradation of methylene blue solution as a function of the initial concentrations was evaluated according to the Langmuir-Hinshelwood model. The reaction rate (k) and adsorption equilibrium constant (K) over 1 cm{sup 2} of 0.5 mol% Cu-doped ZnO thin film are 15.92 {mu}M h{sup -1} and 0.049 {mu}M{sup -1}, respectively.

  9. Structural, electrical and optical studies on spray-deposited aluminium-doped ZnO thin film

    Indian Academy of Sciences (India)

    S Tewari; A Bhattacharjee

    2011-01-01

    Thin films of zinc oxide (ZnO) were deposited on cleaned glass substrates by chemical spray pyrolysis technique using Zn(CH3COO)2 as precursor solution. Also, aluminium-doped thin films of ZnO were prepared by using AlCl3 as doping solution for aluminium. The dopant concentration [Al/Zn atomic percentage (at%)] was varied from 0 to 1.5 at% in thin films of ZnO prepared in different depositions. Structural characterization of the deposited films was performed with X-ray diffraction (XRD) studies. It confirmed that all the films were of zinc oxide having polycrystalline nature and possessing typical hexagonal wurtzite structure with crystallite size varying between 100.7 and 268.6 nm. The films exhibited changes in relative intensities and crystallite size with changes in the doping concentration of Al. The electrical studies established that 1 at% of Aldoping was the optimum for enhancing electrical conduction in ZnO thin films and beyond that the distortion caused in the lattice lowered the conductivity. The films also exhibited distinct changes in their optical properties at different doping concentrations, including a blue shift and slight widening of bandgap with increasing Al dopant concentration.

  10. Growth of ZnO Thin Films on Lattice-Matched Substrates by Pulsed-Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    余庆选; 徐波; 吴气虹; 廖源; 王冠中; 方容川

    2003-01-01

    ZnO films were grown on GaN and sapphire substrates by pulse laser deposition, respectively. The effects of crystalline quality on the optical properties in ZnO epitaxial layers were investigated by x-ray rocking curve and photoluminescence. The x-ray rocking curve of the film deposited on the GaN substrate has the full width half maximum (FWHM) of 0.45°, whereas the FWHM of the x-ray θ-rocking curve of the ZnO film deposited on a sapphire substrate was measured to be about 0.77°. In photoluminescence (PL) measurement, the intensity of UV photoluminescence for the ZnO film on the GaN substrate decreased by approximately two orders of magnitude in comparison with that of the ZnO film on sapphire. It is concluded that the UV luminescence intensity almost does not depend on the textured growth of the ZnO thin film.

  11. Conductive ZnO:Zn Composites for High-Rate Sputtering Deposition of ZnO Thin Films

    Science.gov (United States)

    Zhou, Li Qin; Dubey, Mukul; Simões, Raul; Fan, Qi Hua; Neto, Victor

    2015-02-01

    We report an electrically conductive composite prepared by sintering ZnO and metallic Zn powders. Microstructure analysis combined with electrical conductivity studies indicated that when the proportion of metallic Zn reached a threshold (˜20 wt.%), a metal matrix was formed in accordance with percolation theory. This composite has potential as a sputtering target for deposition of high-quality ZnO. Use of the ZnO:Zn composite completely eliminates target poisoning effects in reactive sputtering of the metal, and enables deposition of thin ZnO films at rates much higher than those obtained by sputtering of pure ZnO ceramic targets. The optical transmittance of the ZnO films prepared by use of this composite is comparable with that of films produced by radio frequency sputtering of pure ZnO ceramic targets. The sputtering characteristics of the conductive ZnO:Zn composite target are reported, and possible mechanisms of the high rate of deposition are also discussed.

  12. Low-temperature-annealed alumina/polyimide gate insulators for solution-processed ZnO thin-film transistors

    International Nuclear Information System (INIS)

    Highlights: • The surface property of the polyimide gate insulator was successfully modified by the introduction of a low-temperature-annealed amorphous alumina interlayer. • The alumina/polyimide gate insulator showed excellent electrical insulating properties. • The solution-processed ZnO TFT with the alumina/polyimide gate insulator exhibited reasonable TFT performance. - Abstract: We report here a low-temperature-annealed alumina/polyimide gate insulator with excellent electrical insulating properties for solution-processed ZnO TFTs. In this study, 150 nm-thick polyimide and 20 nm-thick alumina thin films were deposited by a simple spin-coating followed by a 200 °C-annealing process. With the deposition of the alumina interlayer, the surface of the polyimide film was successfully modified. We prepared ZnO TFTs annealed at 230 °C to investigate the potential of the prepared gate insulator. The field-effect mobility and the on/off current ratio of solution-processed ZnO TFTs with an alumina/polyimide gate insulator were 0.11 cm2/V s and 1.8 × 105, respectively, whereas a ZnO TFT with a polyimide gate insulator was inactive. The alumina interlayer introduced here might provide a compatible interface for the ZnO semiconductor

  13. Transparent and conductive Al/F and In co-doped ZnO thin films deposited by spray pyrolysis

    Science.gov (United States)

    Hadri, A.; Taibi, M.; El hat, A.; Mzerd, A.

    2016-02-01

    In doped ZnO (IZO), In-Al co-doped ZnO (IAZO) and In-F co-doped ZnO (IFZO) were deposited on glass substrates at 350 °C by spray pyrolysis technique. The structural, optical and electrical properties of as-deposited thin films were investigated and compared. A polycrystalline and (002) oriented wurtzite crystal structure was confirmed by X-ray patterns for all films; and the full width at half -maximum (FWHM) of (002) diffraction peak increased after co-doping. The investigation of the optical properties was performed using Uv-vis spectroscopy. The average transmittances of all the films were between 70 and 85%. Hall Effect measurements showed that the electrical conductivity of co-doped films increased as compared with IZO thin film. The highest conductivity of about 16.39 Ω-1 cm-1 was obtained for as-deposited IFZO thin film. In addition, the thin films were annealed at 350 °C for two hour under Ar atmosphere and their optical, electrical properties and the associated photoluminescence (PL) responses of selected films were analysed. After annealing, the electrical conductivity of all thin films was improved and the optical transmittance remained above 70%. Room temperature PL revealed that the annealed IAZO thin film had a strong green emission than that of IZO film.

  14. Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

    KAUST Repository

    Baras, Abdulaziz

    2011-07-01

    Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

  15. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

    Science.gov (United States)

    Suja, Mohammad; Bashar, Sunayna B; Morshed, Muhammad M; Liu, Jianlin

    2015-04-29

    Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1.54 × 10(18) cm(-3), a low resistivity of 0.6 Ω cm, and a moderate mobility of 6.65 cm(2) V(-1) s(-1) at room temperature. Metal oxide semiconductor capacitor devices have been fabricated on the Cu-doped ZnO films, and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as X-ray diffraction, X-ray photoelectron, Raman, and absorption spectroscopies are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO. PMID:25835032

  16. Synthesis and characterization of nanostructured undoped and Sn-doped ZnO thin films via sol–gel approach

    Energy Technology Data Exchange (ETDEWEB)

    Aydin, H., E-mail: cihataydin_26@hotmail.com [Department of Metallurgical and Materials Engineering, Engineering Faculty, Tunceli University, Tunceli 62000 (Turkey); El-Nasser, H.M. [Department of Physics, Al al-Bayt University, Mafraq (Jordan); Aydin, C. [Department of Metallurgy and Materials Engineering, Faculty of Technology, Firat University, Elazig 23119 (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Yakuphanoglu, F. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Department of Physics, Faculty of Science, Firat University, Elazig 23119 (Turkey); Nanoscience and Nanotechnology Laboratory, Firat University, Elazig 23119 (Turkey)

    2015-09-30

    Graphical abstract: - Highlights: • Sn-doped ZnO films were prepared via facile sol–gel spin coating method. • The grain size of the films changes from 39.23 to 71.84 nm with Sn doping. • The refractive index dispersion of the films obeys the single oscillator model. - Abstract: Thin films of Sn-doped ZnO were prepared via facile sol–gel spin coating method. The structural and optical properties of the films were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and UV-VIS-NIR spectrophotometer. The X-ray results confirmed that all the ZnO thin films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation of (002) plane. The crystallite size and lattice parameter values of the films were obtained. Atomic force microscopy results indicate that the Sn-doped ZnO films have the nanostructure. The grain size values of the films were found to vary from 39.23 to 71.84 nm with Sn doping. The nanostructure of the Sn-doped ZnO films was also confirmed by scanning electron microcopy. The optical bandgaps of the films were calculated for the various Sn contents. The refractive index dispersion curves obey the single oscillator model. The optical constants and dispersion parameters of the ZnO films were changed with Sn doping. The obtained results suggest that the structural and optical properties of ZnO films can be controlled by Sn doping.

  17. Microwave-assisted low temperature fabrication of ZnO thin film electrodes for solar energy harvesting

    International Nuclear Information System (INIS)

    Metallic Zn thin films were electrodeposited on fluorine-doped tin oxide (FTO) glass substrates and oxidized under air by conventional radiant and microwave post-annealing methods to obtain ZnO thin film electrodes. The temperature of each post-annealing method was varied systematically and the photoelectrochemical (PEC) performance of electrodes was evaluated. The best photocurrent density achieved by the conventional radiant annealing method at 425 °C for 15 min was 93 μA cm−2 at 1.23 V vs. NHE and the electrode showed an incident photon-to-electron conversion efficiency (IPCE) of 28.2%. X-ray diffractogram of this electrode showed that the oxidation of Zn to ZnO was not completed during the radiant annealing process as evident by the presence of metallic Zn in the electrode. For the electrode oxidized from Zn to ZnO under microwave irradiation, a photocurrent of 130 μA cm−2 at 1.23 V vs. NHE and IPCE of 35.6% was observed after annealing for just 3 min, during which the temperature reached 250 °C. The photocurrent was 40% higher for the microwave annealed sample; this increase was attributed to higher surface area by preserving the nanostructure, confirmed by SEM surface topographical analysis, and better conversion yields to crystalline ZnO. Overall, it was demonstrated that oxidation of Zn to ZnO can be accomplished by microwave annealing five times faster than that of conventional annealing, thus resulting in a ~ 75% power saving. This study shows that microwave processing of materials offers significant economic and performance advantages for industrial scale up. - Highlights: • Conversion of Zn to ZnO by microwave and radiant annealing was conducted. • Microwave conversion was 5 times faster compared to radiant annealing. • Photoelectrochemical performance of microwave annealed ZnO was 40% higher. • Microwave annealing results in a 75% energy saving

  18. Electrical and optical properties of ZnO:Al thin films prepared by the spray pyrolysis technique

    International Nuclear Information System (INIS)

    Highly transparent conducting ZnO:Al thin films have been produced by the spray pyrolysis technique on glass substrates at a substrate temperature Ts=450 deg. C by a home-made spraying system. The electrical and optical properties of the films were investigated at room temperature before and after annealing in nitrogen atmosphere. The electrical properties were studied by recording and analyzing the I-V measurements. All the curves were linear, so the resistivity was estimated from the slopes. The resistivity was found to be 133 Ω cm for the undoped ZnO films, but 90 Ω cm for the Al-doped films before annealing and 84 Ω cm after annealing. The optical properties were investigated by measuring the transmittance curves that were used to find the optical bandgap energy. The bandgap energy was found to be 3.27 eV for the undoped ZnO films and 3.28 eV for the Al-doped ZnO films before and after annealing. Therefore the electro-optical properties of the films had improved with Al doping and annealing in nitrogen atmosphere.

  19. Oxidation of ZnO thin films during pulsed laser deposition process

    Indian Academy of Sciences (India)

    E De Posada; L Moreira; J Pérez De La Cruz; M Arronte; L V Ponce; T Flores; J G Lunney

    2013-06-01

    Pulsed laser deposition of ZnO thin films, using KrF laser, is analysed. The films were deposited on (001) sapphire substrates at 400 °C, at two different oxygen pressures (0.3 and 0.4 mbar) and two different target–substrate distances (30 and 40 mm). It is observed that in order to obtain good quality in the photoluminescence of the films, associated with oxygen stoichiometry, it is needed to maximize the time during which the plasma remains in contact with the growing film (plasma residence time), which is achieved by selecting suitable combinations of oxygen pressures and target to substrate distances. It is also discussed that for the growth parameters used, the higher probability for ZnO films growth results from the oxidation of Zn deposited on the substrate and such process takes place during the time that the plasma is in contact with the substrate. Moreover, it is observed that maximizing the plasma residence time over the growing film reduces the rate of material deposition, favouring the surface diffusion of adatoms, which favours both Zn–O reaction and grain growth.

  20. Influence of solution viscosity on hydrothermally grown ZnO thin films for DSSC applications

    Science.gov (United States)

    Marimuthu, T.; Anandhan, N.; Thangamuthu, R.; Surya, S.

    2016-10-01

    Zinc oxide (ZnO) nanowire arrays (NWAs) were grown onto zinc oxide-titanium dioxide (ZnO-TiO2) seeded fluorine doped tin oxide (FTO) conductive substrate by hydrothermal technique. X-ray diffraction (XRD) patterns depict that ZnO thin films are preferentially oriented along the (002) plane with hexagonal wurtzite structure. Viscosity measurements reveal that viscosity of the solutions linearly increases as the concentrations of the polyvinyl alcohol (PVA) increase in the growth solution. Field emission scanning electron microscope (FE-SEM) images show that the NWAs are vertically grown to seeded FTO substrate with hexagonal structure, and the growth of NWAs decreases as the concentration of the PVA increases. Stylus profilometer and atomic force microscopic (AFM) studies predict that the thickness and roughness of the films decrease with increasing the PVA concentrations. The NWAs prepared at 0.1% of PVA exhibits a lower transmittance and higher absorbance than that of the other films. The band gap of the optimized films prepared at 0.0 and 0.1% of PVA is found to be 3.270 and 3.268 eV, respectively. The photo to current conversion efficiency of the DSSC based on photoanodes prepared at 0.0 and 0.1% of PVA exhibits about 0.64 and 0.82%, respectively. Electrochemical impedance spectra reveal that the DSSC based on photoanode prepared at 0.1% of PVA has the highest charge transfer recombination resistance.

  1. Heavy lithium-doped ZnO thin films prepared by spray pyrolysis method

    Indian Academy of Sciences (India)

    M Ardyanian; N Sedigh

    2014-10-01

    Lithium-doped ZnO thin films (ZnO : Li) were prepared by spray pyrolysis method on the glass substrates for ( = [Li]/[Zn]) value varied between 5 and 70%. Structural, electrical and optical properties of the samples were studied by X-ray diffraction (XRD), UV–Vis–NIR spectroscopy, scanning electron microscopy (SEM), Hall effect and sheet resistance measurements. XRD results show that for ≤ 50%, the structure of the films tends to be polycrystals of wurtzite structure with preferred direction along (0 0 2). The best crystalline order is found at = 20% and the crystal structure is stable until = 60%. The Hall effect results describe that Li doping leads to change in the conduction type from - to -type, again it changes to -type at = 70% and is attributed to self-compensation effect. Moreover, the carrier density was calculated in the order of 1013 cm-3. The resistivity of Li-doped films decreases until 22 cm at = 50%. Optical bandgap was reduced slightly, from 3.27 to 3.24 eV as a function of the grain size. Optical transmittance in the visible range reaches = 97%, by increasing of Li content until = 20%. Electrical and optical properties are coherent with structural results.

  2. Role of growth temperature on the structural, optical and electrical properties of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Ashish, E-mail: dr.akmr@gmail.com [Materials Science Division, Inter University Accelerator Centre, New Delhi, 110067 (India); Kumar, Parmod [Materials Science Division, Inter University Accelerator Centre, New Delhi, 110067 (India); Kumar, Kaushal [Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Roorkee, 247667 (India); Singh, Trilok [Graduate School of Engineering, Toin University of Yokohama, 1614 Kurogane-cho, Aoba, Yokohama, Kanagawa 225-8503 (Japan); Singh, R. [Department of Physics, Indian Institute of Technology, New Delhi, 110016 (India); Asokan, K.; Kanjilal, D. [Materials Science Division, Inter University Accelerator Centre, New Delhi, 110067 (India)

    2015-11-15

    Present study focuses on the influence of growth temperature on electrical and optical properties of polycrystalline ZnO thin films on sapphire substrates grown by atomic layer deposition technique. Dimethylzinc and de-ionized water were used as precursors by varying the growth temperature ranging from 70 to 130 °C. X-ray diffraction pattern confirms the formation of hexagonal wurtzite phase of ZnO with preferred (103) orientation. AFM results infer the growth of good quality films with root mean square roughness ∼1 nm for all these films having same thickness. The free carrier concentration and mobility of samples is found to increase whereas resistivity decreases with increasing growth temperature. The electrical results are well corroborated on the basis of photoluminescence and X-ray photoelectron spectroscopy. Photoluminescence and Raman measurements show that these ZnO thin films have very low defect concentrations. In particular, this study demonstrates that a device quality ZnO material with improved electrical parameters is obtained at the level of 100 °C which can be used for applications such as Schottky diodes for cross-bar memory applications and in hybrid organic/semiconductor junction devices. - Highlights: • Influence of growth temperature on various properties of ALD grown ZnO thin films. • Very smooth surface with root mean square roughness ∼1 nm. • Free carrier concentration and mobility increases with growth temperature. • Device quality ZnO films (improved electrical parameters) are obtained at 100 °C.

  3. Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell

    Directory of Open Access Journals (Sweden)

    Mi-jin Jin

    2013-10-01

    Full Text Available We studied the tuning of structural and optical properties of ZnO thin film and its correlation to the efficiency of inverted solar cell using plasma-enhanced atomic layer deposition (PEALD. The sequential injection of DEZn and O2 plasma was employed for the plasma-enhanced atomic layer deposition of ZnO thin film. As the growth temperature of ZnO film was increased from 100 °C to 300 °C, the crystallinity of ZnO film was improved from amorphous to highly ordered (002 direction ploy-crystal due to self crystallization. Increasing oxygen plasma time in PEALD process also introduces growing of hexagonal wurtzite phase of ZnO nanocrystal. Excess of oxygen plasma time induces enhanced deep level emission band (500 ∼ 700 nm in photoluminescence due to Zn vacancies and other defects. The evolution of structural and optical properties of PEALD ZnO films also involves in change of electrical conductivity by 3 orders of magnitude. The highly tunable PEALD ZnO thin films were employed as the electron conductive layers in inverted polymer solar cells. Our study indicates that both structural and optical properties rather than electrical conductivities of ZnO films play more important role for the effective charge collection in photovoltaic device operation. The ability to tune the materials properties of undoped ZnO films via PEALD should extend their functionality over the wide range of advanced electronic applications.

  4. Combined effect of oxygen deficient point defects and Ni doping in radio frequency magnetron sputtering deposited ZnO thin films

    International Nuclear Information System (INIS)

    Ni doped ZnO thin films with oxygen deficiency have been synthesized on glass substrates by radio frequency magnetron sputtering technique using argon plasma. The combined effect of point defects generated due to oxygen vacancies and Ni doping on the optical and electrical properties of ZnO thin films has been studied in this work. Ni doping concentrations were varied and the structural, optical and electrical properties of the films were studied as a function of doping concentrations. The films were characterized with X-ray diffractometer, UV–Vis–NIR spectrophotometer, X-ray photoelectron spectroscopy, atomic force microscopy and electrical conductivity measurements. Oxygen deficient point defects (Schottky defects) made the ZnO thin film highly conducting while incorporation of Ni dopant made it more functional regarding their electrical and optical properties. The films were found to have tunable electrical conductivity with Ni doping concentrations. - Highlights: • ZnO thin films prepared by radio frequency magnetron sputtering technique • Synthesis process was stimulated to introduce Schottky-type point defects. • Point defects and external doping of Ni made ZnO thin films more functional. • Point defect induced high electrical conductivity in ZnO thin film. • Significant shift in optical bandgap observed in ZnO with Ni doping concentrations

  5. Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

    Institute of Scientific and Technical Information of China (English)

    Zhang An; Zhao xiao-Ru; Duan Li-Bing; Liu Jin-Ming; Zhao Jian-Lin

    2011-01-01

    The dependence of transistor characteristics on grain boundary (GB) position in short-channel ZnO thin film transistors (TFTs) has been investigated using two-dimensional numerical simulations. To simulate the device accurately,both tail states and deep-level states are taken into consideration. It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position, which is different from polycrystalline Si (poly-Si)TFTs. By analysing the mechanism of the carrier transportation in the device, it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with GB position.

  6. Hydrogen influence on the electrical and optical properties of ZnO thin films grown under different atmospheres

    Energy Technology Data Exchange (ETDEWEB)

    Lorite, I., E-mail: lorite@physik.uni-leipzig; Wasik, J.; Michalsky, T.; Schmidt-Grund, R.; Esquinazi, P.

    2014-04-01

    In this work we studied the changes of the electrical and optical properties after hydrogen plasma treatment of polycrystalline ZnO thin films grown under different atmosphere conditions. The obtained results show that the gas used during the growth process plays an important role in the way hydrogen is incorporated in the films. The hydrogen doping can produce radiative and non-radiative defects that reduce the UV emission in ZnO films grown in oxygen atmosphere but it passivates defects created when the films are grown in nitrogen atmosphere. Impedance spectroscopy measurements show that these effects are related to regions where hydrogen is mostly located, either at the grain cores or boundaries. We discuss how hydrogen strongly influences the initial semiconducting behavior of the ZnO thin films. - Highlights: • Effectiveness of hydrogen treatment depends on the thin film growth conditions. • There is no detection of secondary phases after treatment by IS. • Hydrogen incorporation changes optical and electrical ZnO properties.

  7. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Science.gov (United States)

    Ceylan, Abdullah; Ozcan, Yusuf; Orujalipoor, Ilghar; Huang, Yen-Chih; Jeng, U.-Ser; Ide, Semra

    2016-06-01

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  8. Copper oxide thin film and nanowire as a barrier in ZnO dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Raksa, Phathaitep; Nilphai, Sanpet; Gardchareon, Atcharawon [Department of Physics, Faculty of Science, Chiang Mai University, and NANOTEC Center of Excellence at Chiang Mai University, Chiang Mai 50200 (Thailand); Choopun, Supab, E-mail: supab@science.cmu.ac.t [Department of Physics, Faculty of Science, Chiang Mai University, and NANOTEC Center of Excellence at Chiang Mai University, Chiang Mai 50200 (Thailand)

    2009-07-01

    The ZnO dye-sensitized solar cells (DSSCs) with different photoelectrodes were studied on the effect of CuO layer as a barrier layer toward power conversion characteristics. The structures of DSSCs based on ZnO as a photoelectrode, Eosin-Y as a dye sensitizer, iodine/iodide solution as an electrolyte and Pt/FTO as a counterelectrode. CuO powder, nanowire prepared by oxidation reaction of copper powder and CuO thin film prepared by evaporation copper thin film, were used as a layer on the top of ZnO layer to form blocking layer. The photocurrent, photovoltage and power conversion efficiency characteristics for DSSCs were measured under illumination of simulated sunlight obtained from a solar simulator with the radiant power of 100 mW/cm{sup 2}. It was found that ZnO DSSCs with CuO thin film exhibited highest current density of 5.10 mA/cm{sup 2} and highest power conversion efficiency of 0.92% than those of CuO powder and nanowire. The enhancement of the power conversion efficiency can be explained in terms of the retardation of the interfacial recombination dynamics of CuO blocking layer.

  9. Temperature dependence of the spin relaxation in highly degenerate ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Prestgard, M. C.; Siegel, G.; Tiwari, A., E-mail: tiwari@eng.utah.edu [Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 (United States); Materials Research Science and Engineering Center, University of Utah, Salt Lake City, Utah 84112 (United States); Roundy, R.; Raikh, M. [Materials Research Science and Engineering Center, University of Utah, Salt Lake City, Utah 84112 (United States); Department of Physics and Astronomy, University of Utah, Salt Lake City, Utah 84112 (United States)

    2015-02-28

    Zinc oxide is considered a potential candidate for fabricating next-generation transparent spintronic devices. However, before this can be achieved, a thorough scientific understanding of the various spin transport and relaxation processes undergone in this material is essential. In the present paper, we are reporting our investigations into these processes via temperature dependent Hanle experiments. ZnO thin films were deposited on c-axis sapphire substrates using a pulsed laser deposition technique. Careful structural, optical, and electrical characterizations of the films were performed. Temperature dependent non-local Hanle measurements were carried out using an all-electrical scheme for spin injection and detection over the temperature range of 20–300 K. From the Hanle data, spin relaxation time in the films was determined at different temperatures. A detailed analysis of the data showed that the temperature dependence of spin relaxation time follows the linear-in-momentum Dyakonov-Perel mechanism.

  10. Vibration optimization of ZnO thin film bulk acoustic resonator with ring electrodes

    Science.gov (United States)

    Zhao, Zinan; Qian, Zhenghua; Wang, Bin

    2016-04-01

    A rectangular ZnO thin film bulk acoustic resonator with ring electrodes is presented in this paper to demonstrate the existence of a nearly uniform displacement distribution at the central part of this typical resonator. The variational formulation based on two-dimensional scalar differential equations provides a theoretical foundation for the Ritz method adopted in our analysis. The resonant frequencies and vibration distributions for the thickness-extensional modes of this ring electrode resonator are obtained. The structural parameters are optimized to achieve a more uniform displacement distribution and therefore a uniform mass sensitivity, which guarantee the high accuracy and repeatable measurement for sensor detection in an air or a liquid environment. These results provide a fundamental reference for the design and optimization of the high quality sensor.

  11. Photoelectrocatrocatalytic hydrolysis of starch by using sprayed ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    R.T.Sapkal; S.S.Shinde; K.Y.Rajpure; C.H.Bhosale

    2013-01-01

    Thin films of zinc oxide have been deposited onto glass/FTO substrates at optimized 400 ℃ by using a chemical spray pyrolysis technique.Deposited films are characterized for their structural,morphological optical and photocatalytic activity by using XRD,an SEM,a UV-vis spectrophotometer,and a PEC single-cell reactor.Films are polycrystalline and have a hexagonal (wurtzite) crystal structure with c-axis (002) orientation growth perpendicular to the substrate surface.The observed direct band gap is about 3.22 eV for typical films prepared at 400 ℃.The photocatalytic activity of starch with a ZnO photocatalyst has been studied by using a novel photoelectrocatalytic process.

  12. ZnO thin film transistor immunosensor with high sensitivity and selectivity

    Science.gov (United States)

    Reyes, Pavel Ivanoff; Ku, Chieh-Jen; Duan, Ziqing; Lu, Yicheng; Solanki, Aniruddh; Lee, Ki-Bum

    2011-04-01

    A zinc oxide thin film transistor-based immunosensor (ZnO-bioTFT) is presented. The back-gate TFT has an on-off ratio of 108 and a threshold voltage of 4.25 V. The ZnO channel surface is biofunctionalized with primary monoclonal antibodies that selectively bind with epidermal growth factor receptor (EGFR). Detection of the antibody-antigen reaction is achieved through channel carrier modulation via pseudo double-gating field effect caused by the biochemical reaction. The sensitivity of 10 fM detection of pure EGFR proteins is achieved. The ZnO-bioTFT immunosensor also enables selectively detecting 10 fM of EGFR in a 5 mg/ml goat serum solution containing various other proteins.

  13. Physical properties of Ga-doped ZnO thin films by spray pyrolysis

    International Nuclear Information System (INIS)

    Research highlights: In this work, we report the structural, optical and electrical properties of the transparent conducting GZO thin films prepared by spray pyrolysis method. We sought optimum deposition conditions yielding GZO films with desired physical properties, specifically good crystalline quality microstructure, low resistivity and high transparency. The electrical conductivity and mobilities of GZO thin films are very good as compared with previous reported spray pyrolysed films. - Abstract: Gallium doped zinc oxide (GZO) thin films were prepared using the simple, flexible and cost-effective spray pyrolysis technique. The physical properties of the films were studied as a function of increasing gallium dopant concentration from 1 to 9 at.%. The films were characterized by various methods to understand their structural, morphological, optical and electrical properties. The X-ray diffraction analysis revealed that the films were polycrystalline in nature having a hexagonal wurtzite type crystal structure with a preferred grain orientation in the (0 0 2) direction. Scanning electron microscopy (SEM) measurements reveal that the surface morphology of the films changes continuously with a decrease in the grain size due to Ga doping. All the films showed nearly 90% of transparency in the entire visible region. A blue shift of the optical band gap was observed with an increase in Ga doping. Room temperature photoluminescence (PL) measurement of the deposited films indicates incorporation of Ga in ZnO lattice. At 3 at.% Ga doping, the film has lowest resistivity of 6.8 x 10-3 cm while the carrier concentration is highest.

  14. Determination of Thickness and Optical Constants of ZnO Thin Films Prepared by Filtered Cathode Vacuum Arc Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Ming-Dong; ZHU Dao-Yun; LIU Yi; ZHANG Lin; ZHENG Chang-Xi; HE Zhen-Hui; CHEN Di-Hu; WEN Li-Shi

    2008-01-01

    ZnO thin films are prepared on glass substrates by filtered cathode vacuum arc (FCVA) deposition technique.A new method is demonstrated to extract the refractive index,thickness and optical band gap of ZnO thin films from the transmission spectrum alone.The refractive index is calculated from the extremes of the interference fingers.The transmission spectrum is divided into two terms,non-lnterference term and interference effect term.The thickness of thin films is calculated by simulating the interference term,and the non-interference term is used to calculate optical band gap with the gained thickness.The results are compared with measurements by using an ellipsometry and a scanning electron microscope.

  15. Improvement in the Grain Growth of Plasma-Treated Nano-Sized ZnO Films and Their Characterization.

    Science.gov (United States)

    Chen, Mi; Chou, Ching-Chuan; Lin, Ching-Cheng; Koo, Horng-Show

    2015-11-01

    The well-aligned ZnO nanorods were rapidly grown on an indium tin oxide (ITO)-coated glass substrate using Al-doped ZnO (AZO) thin film as seed layer by the microwave-assisted hydrothermal chemical route. The optimal growth conditions for the well-aligned ZnO nanorods were obtained by modulating H2 plasma pretreatment time for the seed layer and synthesis time for ZnO nanorods. The H2 plasma effect of the seed layer on the alignment, growth rate and crysallinity of ZnO nanods is also demonstrated. The synthesized ZnO nanorods were annealed in atmosphere of N2, O2 and H2 + N2 mixed gas to improve the related physical characteristics, the ZnO nanorods on grapheme/ITO substrate were also investigated. The results show that the alignment and growth rate of ZnO nanorods depends on the physical characteristics and roughness of the seed layer, which can be improved by H2 plasma pretreatment. The average growth rate of ZnO nanorods synthesized by microwave hydrothermal technique is about 2.2 μm/hr which significantly superior to other conventional techniques. After the appropriate N2 annealing treatment, good quality and well-aligned ZnO nanorods, which are single crystal with stacking defects and pyramid or candle shape, were obtained. A fundamental model of the effect of H2 plasma pretreatment on the surface of seed layer and the growth of ZnO nanorods using a microwave-assisted hydrothermal chemical route is also described. PMID:26726662

  16. Structural and Luminescent Properties of ZnO Thin Films Deposited by Atmospheric Pressure Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    ZHAO Guo-Liang; LIN Bi-Xia; HONG Liang; MENG Xiang-Dong; FU Zhu-Xi

    2004-01-01

    ZnO thin films were successfully deposited on Si (100) substrates by chemical vapour deposition (CVD) at atmospheric pressure (1 atm). The only solid source used here is zinc acetate, (CHsCOO)2Zn, and the carrier gas is nitrogen. The sample, which was prepared at 550℃ during growth and then annealed in air at 900℃ , has only a ZnO (002) diffraction peak at 34.6° with its FWHM of 0.23° in the XRD pattern. The room-temperature PL spectrum shows a strong ultraviolet emission with the peak centred at 380nm. We analysed the effects of many factors, such as the source, substrates, growth and annealing temperatures, and annealing ambience, on the structural and optical properties of our prepared ZnO films.

  17. Influence of Doping and Annealing on Structural, Optical and Electrical properties Amorphous ZnO Thin Films Prepared by PLD

    Directory of Open Access Journals (Sweden)

    Azhar AbduAlwahab Ali

    2015-03-01

    Full Text Available The optical gap of the films was calculated from the curve of absorption coefficient (αhע2 vs. hע and was found to be 3.8 eV at room temperature, and this value decreases from 3.8 to 3.58 eV with increasing of annealing temperature up to 473-673 K, and increases with the Ga doping. λ cutoff was calculated for ZnO and showed an increase with increasing annealing temperature and shifting to longer wavelength, while with doping the λcutoff shifted to shorter wavelength. The photoluminescence (PL results indicate that the pure ZnO thin films grown at room temperature show strong peaks at 640 nm , but  GaO doped ZnO films showed a band emission in the yellow-green spectral region (380 to 450nm.

  18. Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell.

    Science.gov (United States)

    Hirschmann, Johannes; Faber, Hendrik; Halik, Marcus

    2012-01-21

    In this work, we report on the synthesis and the electrical properties of ZnO nanoparticles, which differ in their organic shell. The introduction of a 2-ethylhexanoate shell instead of a common acetate shell has an impact on the accessible size of the ZnO nanoparticles and changes the electrical properties of thin films in transistors. While acetate covered ZnO particles behave as a semiconductor with an electron mobility of 0.38 cm(2) V(-1) s(-1), the 2-ethylhexanoate ligand shell inhibits a charge transport resulting in insulating films (with an average ε(r) = 9.4). These films can be reconverted to semiconductive layers by removing the ligand shell with oxygen plasma treatment or they can be used as a solution processed dielectric layer in organic transistors. Its use as dielectric allows low voltage device operation and shows potential application as a charge storage layer as needed in non-volatile memory transistors.

  19. Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors

    Institute of Scientific and Technical Information of China (English)

    Zhu Xiaming; Wu Huizhen; Wang Shuangjiang; Zhang Yingying; Cai Chunfeng; Si Jianxiao; Yuan Zijian; Du Xiaoyang; Dong Shurong

    2009-01-01

    Using NH3 as nitrogen source gas, N-doped ZnO (ZnO:N) thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature. The ZnO:N thin films display significant increase of resistivity and decrease of photoluminescence intensity. As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

  20. Pretreatment of polyethylene terephthalate substrate for the growth of Ga-doped ZnO thin film.

    Science.gov (United States)

    Kim, D W; Kang, J H; Lim, Y S; Lee, M H; Seo, W S; Park, H H; Seo, K H; Park, M G

    2011-02-01

    The effect of the pretreatment of polyethylene terephthalate (PET) substrate on the growth of transparent conducting Ga-doped ZnO (GZO) thin film was investigated. Because of its high gas and moisture absorption and easy gas permeation, PET substrate was annealed at 100 degrees C in a vacuum chamber prior to the sputtering growth of GZO thin film for the outgassing of impurity gases. GZO thin film was deposited on the pretreated PET substrate by rf-magnetron sputtering and significantly improved electrical properties of GZO thin film was achieved. Electrical and structural characterizations of the GZO thin films were carried out by 4-point probe, Hall measurement, and scanning electron microscopy, and the effects of the pretreatment on the improved properties of GZO thin films were discussed. This result is not only useful to PET substrate, but also could be applicable to other plastic substrates which inevitably containing the moisture and impurity gases. PMID:21456250

  1. Effects of precursor concentrations on ZnO nano-fibrous thin films grown by using the sol-gel dip-coating method

    International Nuclear Information System (INIS)

    ZnO thin films were fabricated by using the dip-coating method to deposit solutions with different precursor concentrations on quartz substrates. The structural and the optical properties of the ZnO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL), and ultraviolet-visible spectroscopy. The average grain size in the ZnO thin films increased from 19.09 to 39.19 nm with increasing precursor concentrations, and nanofibrous structures were observed on the surface when precursor concentrations above 0.4 M were used. The PL spectra, in all cases, showed near-band-edge (NBE) emission and deep-level emission (DLE). When the precursor concentrations were increased, the optical band gap values for the ZnO thin films shifted towards the blue region, and the values of the Urbach energy (EU) gradually decreased from 154 to 65 meV.

  2. Microwave Assisted Growth of ZnO Nanorods and Nanopolypods Nanostructure Thin Films for Gas and Explosives Sensing

    Directory of Open Access Journals (Sweden)

    A. K. Singh

    2013-01-01

    Full Text Available The growth of uniformly distributed and densely packed array of zinc oxide (ZnO nanorods (NRs and nanorods (NRs/nanopolypods (NPPs was successfully achieved through microwave-assisted chemical route at low temperature. The ZnO NRs and NRs/NPPs were characterized using X-ray diffraction (XRD, scanning electron microscope (SEM, energy dispersive X-ray analysis (EDX, and UV-Vis absorption spectroscopy. The ZnO NRs were of 100–150 nm diameter and 0.5–1 μm length, while the NPPs were of diameter about 150–200 nm and 1.5–2 μm pod length. The prepared films are polycrystalline in nature and highly oriented along (002 plane with a hexagonal wurtzite structure. These films were studied for the sensing properties of liquefied petroleum gas (LPG, oxygen, and hazardous explosives, that is, 2,4,6-trinitrotoluene (TNT and cyclotrimethylenetrinitramines (RDX, in the temperature ranges of 25–425 °C and 100–200 °C, respectively. The grown nanostructure films showed reliable stable response to several on-off cycles, and reduction in sensor recovery time was found with the increase in temperature. ZnO NRs and NRs/NPPs showed better sensitivity and recovery time for both LPG and oxygen, as compared to the literature-reported results for ZnO thin films.

  3. Optical and Electrical Characteristic of Layer-by-layer Sol-gel Spin Coated Nanoparticles ZnO Thin Films

    International Nuclear Information System (INIS)

    Transparent ZnO thin films have been deposited on glass substrate using sol-gel spin coating technique. 0.35 M sol were prepared by dissolving zinc acetate dehydrate in 2-methoxyethanol with monoethanolamine as the stabilizer. In this paper, a novel method called layer-by-layer is introduced, where the thin film is not only dried after each layer is spin-coated, but also directly annealed at 500 degree Celsius to improve the crystallinity of the films. Samples without annealing were also prepared as the control sample. ZnO thin films were characterized using field emission scanning electron microscopy, X-ray diffraction, current-voltage measurement, UV-Vis spectroscopy and photoluminescence spectroscopy. The results revealed that layer by- layer ZnO thin films have better conductivity and higher intensity peak for PL spectra at visible spectra of 580 nm. FE-SEM images shows nanoparticles almost hexagonal shaped with high crystallinity compared to control samples. (author)

  4. Sol–Gel and Thermally Evaporated Nanostructured Thin ZnO Films for Photocatalytic Degradation of Trichlorophenol

    Directory of Open Access Journals (Sweden)

    Mahmoud Sawsan

    2009-01-01

    Full Text Available Abstract In the present work, thermal evaporation and sol–gel coating techniques were applied to fabricate nanostructured thin ZnO films. The phase structure and surface morphology of the obtained films were investigated by X-ray diffractometer (XRD and scanning electron microscope (SEM, respectively. The topography and 2D profile of the thin ZnO films prepared by both techniques were studied by optical profiler. The results revealed that the thermally evaporated thin film has a comparatively smoother surface of hexagonal wurtzite structure with grain size 12 nm and 51 m2/g. On the other hand, sol–gel films exhibited rough surface with a strong preferred orientation of 25 nm grain size and 27 m2/g surface area. Following deposition process, the obtained films were applied for the photodegradation of 2,4,6-trichlorophenol (TCP in water in presence of UV irradiation. The concentrations of TCP and its intermediates produced in the solution during the photodegradation were determined by high performance liquid chromatography (HPLC at defined irradiation times. Complete decay of TCP and its intermediates was observed after 60 min when the thermal evaporated photocatalyst was applied. However, by operating sol–gel catalyst, the concentration of intermediates initially increased and then remained constant with irradiation time. Although the degradation of TCP followed first-order kinetic for both catalysts, higher photocatalytic activity was exhibited by the thermally evaporated ZnO thin film in comparison with sol–gel one.

  5. Effect of tin doping on optical properties of nanostructured ZnO thin films grown by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Bedia, F.Z.; Bedia, A. [URMER, Abou-Bakr Belkaid University, 13000 Tlemcen (Algeria); Maloufi, N., E-mail: nabila.maloufi@univ-lorraine.fr [Laboratoire d’Étude des Microstructures et de Mécanique des Matériaux (LEM3), UMR-CNRS 7239, Université de Lorraine, 57045 Metz (France); Laboratory of Excellence on Design of Alloy Metals for low-mAss Structures (DAMAS), Université de Lorraine (France); Aillerie, M.; Genty, F. [LMOPS-EA 4423, Université de Lorraine, 57070 Metz (France); Supelec, LMOPS, 57070 Metz (France); Benyoucef, B. [URMER, Abou-Bakr Belkaid University, 13000 Tlemcen (Algeria)

    2014-12-15

    Highlights: • (0–2%) Sn-doped ZnO films grown by spray pyrolysis on glass substrates. • Transmittance up to 93% in visible region, sharp absorption edge at 360 nm. • Blue shift of optical band gap: E{sub g} = 3.27 eV for 0% Sn; Eg{sub max} = 3.30 eV for 0.5% Sn. • All the optical parameters reach threshold values for 0.5% Sn-doped ZnO films. • Good physical properties suited for films integration in optoelectronic devices. - Abstract: Sn-doped ZnO thin films with 0%, 0.5%, 1%, 1.5% and 2% Sn were grown by spray pyrolysis method on glass substrates under optimized conditions. High resolution Field Effect Scanning Electron Microscopy characterization showed that the films consist of hexagonal-like grains. A comprehensive study of the optical properties was performed and the dispersion constants were determined. The effect of Sn content on the optical band gap and the optical constants (refractive index, extinction coefficient, dielectric constants, and dispersion parameters) was studied. These Sn-doped ZnO thin films are highly transparent (73–93%) in the visible region. A blue shift of the optical band gap, attributed to the Burstein Moss effect, was observed for the Sn-doped films. All the optical dispersion parameters depend on the Sn content of the films, but were found to reach threshold values at a Sn content of 0.5%. These optical parameters are discussed in terms of the single oscillator model. This study demonstrated that this 0.5% Sn-doped ZnO thin film has enhanced physical properties, allowing its better integration in optoelectronic devices.

  6. Effect of tin doping on optical properties of nanostructured ZnO thin films grown by spray pyrolysis technique

    International Nuclear Information System (INIS)

    Highlights: • (0–2%) Sn-doped ZnO films grown by spray pyrolysis on glass substrates. • Transmittance up to 93% in visible region, sharp absorption edge at 360 nm. • Blue shift of optical band gap: Eg = 3.27 eV for 0% Sn; Egmax = 3.30 eV for 0.5% Sn. • All the optical parameters reach threshold values for 0.5% Sn-doped ZnO films. • Good physical properties suited for films integration in optoelectronic devices. - Abstract: Sn-doped ZnO thin films with 0%, 0.5%, 1%, 1.5% and 2% Sn were grown by spray pyrolysis method on glass substrates under optimized conditions. High resolution Field Effect Scanning Electron Microscopy characterization showed that the films consist of hexagonal-like grains. A comprehensive study of the optical properties was performed and the dispersion constants were determined. The effect of Sn content on the optical band gap and the optical constants (refractive index, extinction coefficient, dielectric constants, and dispersion parameters) was studied. These Sn-doped ZnO thin films are highly transparent (73–93%) in the visible region. A blue shift of the optical band gap, attributed to the Burstein Moss effect, was observed for the Sn-doped films. All the optical dispersion parameters depend on the Sn content of the films, but were found to reach threshold values at a Sn content of 0.5%. These optical parameters are discussed in terms of the single oscillator model. This study demonstrated that this 0.5% Sn-doped ZnO thin film has enhanced physical properties, allowing its better integration in optoelectronic devices

  7. Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes

    Energy Technology Data Exchange (ETDEWEB)

    Garino, Nadia, E-mail: nadia.garino@iit.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Lamberti, Andrea; Gazia, Rossana; Chiodoni, Angelica [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Gerbaldi, Claudio, E-mail: claudio.gerbaldi@polito.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); GAME Lab, Department of Applied Science and Technology – DISAT, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Turin (Italy)

    2014-12-05

    Highlights: • Zn is thermally oxidized in ambient air to obtain sponge-like ZnO film. • Polycrystalline, transparent, porous thin film is obtained. • Film exhibits stabile specific capacity (∼300 mAh g{sup −1}) after prolonged cycling. • Sponge-like ZnO film shows promising prospects as Li-ion battery anode. - Abstract: Single phase wurtzitic porous ZnO thin films are obtained by a simple two-step method, involving the sputtering deposition of a sponge-like metallic Zn layer, followed by a moderately low temperature treatment for the complete zinc oxidation. Thanks to its 3D nanostructuration, the superimposition of small branches able to grow in length almost isotropically and forming a complex topography, sponge-like ZnO can combine the fast transport properties of one dimensional material and the high surface area usually provided by nanocrystalline electrodes. When galvanostatically tested in lithium cell, after the initial decay, it can provide an almost stable specific capacity higher than 50 μAh cm{sup −2} after prolonged cycling at estimated 0.7 C, with very high Coulombic efficiency.

  8. Application of Thin ZnO ALD Layers in Fiber-Optic Fabry-Pérot Sensing Interferometers.

    Science.gov (United States)

    Majchrowicz, Daria; Hirsch, Marzena; Wierzba, Paweł; Bechelany, Michael; Viter, Roman; Jędrzejewska-Szczerska, Małgorzata

    2016-03-22

    In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28) segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD). Measurements were performed with the interferometer illuminated by two broadband sources operating at 1300 nm and 1550 nm. Reflected interference signal was acquired by an optical spectrum analyzer while the length of the air cavity was varied. Thickness of the ZnO layers used in the experiments was 50 nm, 100 nm, and 200 nm. Uncoated SMF-28 fiber was also used as a reference. Based on the results of measurements, the thickness of the ZnO layers and the length of the cavity were selected in order to achieve good visibility. Following, the interferometer was used to determine the refractive index of selected liquids.

  9. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    International Nuclear Information System (INIS)

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  10. Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes

    International Nuclear Information System (INIS)

    Highlights: • Zn is thermally oxidized in ambient air to obtain sponge-like ZnO film. • Polycrystalline, transparent, porous thin film is obtained. • Film exhibits stabile specific capacity (∼300 mAh g−1) after prolonged cycling. • Sponge-like ZnO film shows promising prospects as Li-ion battery anode. - Abstract: Single phase wurtzitic porous ZnO thin films are obtained by a simple two-step method, involving the sputtering deposition of a sponge-like metallic Zn layer, followed by a moderately low temperature treatment for the complete zinc oxidation. Thanks to its 3D nanostructuration, the superimposition of small branches able to grow in length almost isotropically and forming a complex topography, sponge-like ZnO can combine the fast transport properties of one dimensional material and the high surface area usually provided by nanocrystalline electrodes. When galvanostatically tested in lithium cell, after the initial decay, it can provide an almost stable specific capacity higher than 50 μAh cm−2 after prolonged cycling at estimated 0.7 C, with very high Coulombic efficiency

  11. Acoustoelectric Effect on the Responses of SAW Sensors Coated with Electrospun ZnO Nanostructured Thin Film

    Directory of Open Access Journals (Sweden)

    Zafer Ziya Ozturk

    2012-08-01

    Full Text Available In this study, zinc oxide (ZnO was a very good candidate for improving the sensitivity of gas sensor technology. The preparation of an electrospun ZnO nanostructured thin film on a 433 MHz Rayleigh wave based Surface Acoustic Wave (SAW sensor and the investigation of the acoustoelectric effect on the responses of the SAW sensor are reported. We prepared an electrospun ZnO nanostructured thin film on the SAW devices by using an electrospray technique. To investigate the dependency of the sensor response on the structure and the number of the ZnO nanoparticles, SAW sensors were prepared with different coating loads. The coating frequency shifts were adjusted to fall between 100 kHz and 2.4 MHz. The sensor measurements were performed against VOCs such as acetone, trichloroethylene, chloroform, ethanol, n-propanol and methanol vapor. The sensor responses of n-propanol have opposite characteristics to the other VOCs, and we attributed these characteristics to the elastic effect/acoustoelectric effect.

  12. Application of Thin ZnO ALD Layers in Fiber-Optic Fabry-Pérot Sensing Interferometers.

    Science.gov (United States)

    Majchrowicz, Daria; Hirsch, Marzena; Wierzba, Paweł; Bechelany, Michael; Viter, Roman; Jędrzejewska-Szczerska, Małgorzata

    2016-01-01

    In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28) segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD). Measurements were performed with the interferometer illuminated by two broadband sources operating at 1300 nm and 1550 nm. Reflected interference signal was acquired by an optical spectrum analyzer while the length of the air cavity was varied. Thickness of the ZnO layers used in the experiments was 50 nm, 100 nm, and 200 nm. Uncoated SMF-28 fiber was also used as a reference. Based on the results of measurements, the thickness of the ZnO layers and the length of the cavity were selected in order to achieve good visibility. Following, the interferometer was used to determine the refractive index of selected liquids. PMID:27011188

  13. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lare, Y. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Godoy, A. [Facultad Ciencias de la Salud, Universidad Diego Portales, Ejercito 141, Santiago de Chile (Chile); Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, IMN, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Jondo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Abachi, T. [Ecole Normale Superieure, Kouba, Alger (Algeria); Diaz, F.R. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Napo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); del Valle, M.A. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Bernede, J.C., E-mail: jean-christian.bernede@univ-nantes.fr [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France)

    2009-04-15

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  14. Application of Thin ZnO ALD Layers in Fiber-Optic Fabry-Pérot Sensing Interferometers

    Directory of Open Access Journals (Sweden)

    Daria Majchrowicz

    2016-03-01

    Full Text Available In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28 segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD. Measurements were performed with the interferometer illuminated by two broadband sources operating at 1300 nm and 1550 nm. Reflected interference signal was acquired by an optical spectrum analyzer while the length of the air cavity was varied. Thickness of the ZnO layers used in the experiments was 50 nm, 100 nm, and 200 nm. Uncoated SMF-28 fiber was also used as a reference. Based on the results of measurements, the thickness of the ZnO layers and the length of the cavity were selected in order to achieve good visibility. Following, the interferometer was used to determine the refractive index of selected liquids.

  15. Copper(II) Schiff base complexes and their mixed thin layers with ZnO nanoparticles

    Indian Academy of Sciences (India)

    MAGDALENA BARWIOLEK; ROBERT SZCZĘSNY; EDWARD SZŁYK

    2016-07-01

    Cu(II) complexes with Schiff bases derived from ethylenediamine (en) and 2-pyridinecarboxaldehyde (pyca), 2,5-dimethoxybenzaldehyde (dmbaH) or 4-imidazolecarboxaldehyde (4Him) were obtained and studied by elemental analysis, UV-VIS and IR spectra. Zinc oxide was synthesized using a simple homogeneous precipitation method with zinc acetate as a starting material. Thin layers of the studied Cu(II) complexes were deposited on Si(111) or ZnO/Si(111) substrates by a spin coating method and characterized with a scanningelectron microscopy (SEM/EDS), atomic force microscopy (AFM) and fluorescence spectroscopy. For Cu(II) layers the most intensive fluorescence bands due to intra-ligand transitions were observed between 462 and 503 nm. The fluorescence intensity of thin layers was corelated to the rotation speed. In the case of the [Cu(II)(en(4Him)₂)Cl₂](2a)/ZnO/Si and [Cu(en(dmbaH)₂)Cl₂](3a)/ZnO/Si layers the quenching of the emission band from ZnO at 440 nm (λex = 330 nm) associated with various intrinsic or extrinsic lattice defects was noted.

  16. Effect of Oxygen Flow Rate on the Properties of Nano columnar ZnO Thin Films Prepared using Radio Frequency Magnetron Sputtering System for Ultraviolet Sensor Applications

    International Nuclear Information System (INIS)

    Nano structured ZnO thin films were deposited on glass substrates using radio frequency (RF) magnetron sputtering system at different oxygen (O2) flow rates ranges between 0 to 40 sccm. By using ZnO target that were bombarded by argon (Ar) plasma generated by RF power of 250 W in the Ar and O2 gas mixture ambient, nano columnar ZnO structure thin films were produced on the substrates as observed through atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The surface roughness of the films found to be decreased with higher O2 flow rates. The ultraviolet-visible (UV-Vis) spectra show that all samples are very transparent in the visible region (400-800 nm) with average transparency above 85 %. The XRD spectra reveal that the deposited films are preferentially grown along the c-axis indicating high ZnO crystallinity. The photocurrent properties indicate that ZnO thin film prepared at O2 flow rate of 20 sccm has the optimum characteristic for ultraviolet sensor applications. This finding suggested that the O2 flow rates play important role and has critical value for semiconducting nano columnar ZnO growth in the sputtering system, which can produce ZnO thin film with high sensitivity of ultraviolet detection. (author)

  17. Structural and magnetic properties of cobalt-doped ZnO thin films on sapphire (0 0 0 1) substrate deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shanying, E-mail: yshy_150@163.com [Laiwu Vocational and Technical College, Laiwu, Shandong Province, 271100 (China); Lv, Rongqing [Laiwu Vocational and Technical College, Laiwu, Shandong Province, 271100 (China); Wang, Changzheng [School of Physics Science and Information Engineering, Liaocheng University, Liaocheng, Shandong Province, 252059 (China); Liu, Yunyan [School of Science, Shandong University of Technology, Zibo, Shandong Province, 255049 (China); Song, Zeqing [Laiwu Vocational and Technical College, Laiwu, Shandong Province, 271100 (China)

    2013-12-05

    Highlights: •Co-doped ZnO thin films on sapphire (0 0 0 1) substrates were deposited. •ZnLMM Auger spectrum indicated that Zn interstitials existed in thin films. •The lattice constant increasing was ascribed to the stress and interstitial atoms. •The average moment per Co atom related to the distribution of Co{sup 2+} ions and defects. -- Abstract: Co-doped ZnO thin films on sapphire (0 0 0 1) substrates were deposited by PLD at various substrate temperatures in a one Pa oxygen ambient condition. The structural and magnetic properties of as-grown thin films were characterized by using XRD, UV–Visible absorption spectrophotometer, XPS and AGM. All samples possessed wurtzite hexagonal structure of ZnO. Co atoms incorporated into ZnO matrix and substituted for Zn in ZnO lattice, and Zn interstitials existed in as-grown thin films. The c-axis lattice constants of as-deposited thin films were larger than the standard data. Crystallization of as-prepared thin films increased and then decreased with substrate temperatures enhancing. All samples exhibited room-temperature ferromagnetism. The average moment per Co atom was much smaller than that of Co{sup 2+} (3d{sup 7}), due to the different distribution of Co{sup 2+} ions and defects, as well as the different defect concentrations in thin films.

  18. Humidity sensing properties of Ce-doped nanoporous ZnO thin film prepared by sol-gel method

    Institute of Scientific and Technical Information of China (English)

    Mansoor Anbia; Seyyed Ebrahim Moosavi Fard

    2012-01-01

    The humidity sensitive characteristics of the sensor fabricated from Ce-doped nanoporous ZnO by screen-printing on the alumina substrate with Ag-Pd interdigital electrodes were investigated at different sintering temperatures.The nanoporous thin films were prepared by sol-gel technique.It was found that the impedance of the sensor sintered at 600 ℃ changed more than four order of magnitude in the relative humidity (RH) range of 11%-95% at 25 ℃.The response and recovery time of the sensor were about 13 and 17 s,respectively.The sensor showed high humidity sensitivity,rapid response and recovery,prominent stability,good repeatability and narrow hysteresis loop.These results indicated that Ce-doped nanoporous ZnO thin films can be used in fabricating high-performance humidity sensors.

  19. Ti-doped ZnO Thin Films Prepared at Different Ambient Conditions: Electronic Structures and Magnetic Properties

    Directory of Open Access Journals (Sweden)

    Zhihua Yong

    2010-06-01

    Full Text Available We present a comprehensive study on Ti-doped ZnO thin films using X-ray Absorption Fine Structure (XAFS spectroscopy. Ti K edge XAFS spectra were measured to study the electronic and chemical properties of Ti ions in the thin films grown under different ambient atmospheres. A strong dependence of Ti speciation, composition, and local structures upon the ambient conditions was observed. The XAFS results suggest a major tetrahedral coordination and a 4+ valence state. The sample grown in a mixture of 80% Ar and 20% O2 shows a portion of precipitates with higher coordination. A large distortion was observed by the Ti substitution in the ZnO lattice. Interestingly, the film prepared in 80% Ar, 20% O2 shows the largest saturation magnetic moment of 0.827 ± 0.013 µB/Ti.

  20. Tailoring the coercivity in ferromagnetic ZnO thin films by 3d and 4f elements codoping

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J. J.; Xing, G. Z., E-mail: guozhong.xing@unsw.edu.au; Yi, J. B.; Li, S. [School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052 (Australia); Chen, T. [Department of Physics, The Chinese University of Hong Kong, Shatin (Hong Kong); Ionescu, M. [Australian Nuclear Science and Technology Organization, Sydney, New South Wales 2234 (Australia)

    2014-01-06

    Cluster free, Co (3d) and Eu (4f) doped ZnO thin films were prepared using ion implantation technique accompanied by post annealing treatments. Compared with the mono-doped ZnO thin films, the samples codoped with Co and Eu exhibit a stronger magnetization with a giant coercivity of 1200 Oe at ambient temperature. This was further verified through x-ray magnetic circular dichroism analysis, revealing the exchange interaction between the Co 3d electrons and the localized carriers induced by Eu{sup 3+} ions codoping. The insight gained with modulating coercivity in magnetic oxides opens up an avenue for applications requiring non-volatility in spintronic devices.

  1. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    Energy Technology Data Exchange (ETDEWEB)

    Pathirane, M., E-mail: minoli.pathirane@uwaterloo.ca; Iheanacho, B.; Lee, C.-H.; Wong, W. S. [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Tamang, A.; Knipp, D. [Research Center for Functional Materials and Nanomolecular Science, Jacobs University Bremen, Bremen 28759 (Germany); Lujan, R. [Electronic Materials and Devices Laboratory, Palo Alto Research Center, Palo Alto, California 93003 (United States)

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  2. Structural, optical, spectroscopic and electrical properties of Mo-doped ZnO thin films grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Soumahoro, I. [Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, B.P. 43, 67034 Strasbourg Cedex 2 (France); Colis, S., E-mail: colis@ipcms.u-strasbg.fr [Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, B.P. 43, 67034 Strasbourg Cedex 2 (France); Schmerber, G.; Leuvrey, C.; Barre, S.; Ulhaq-Bouillet, C. [Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, B.P. 43, 67034 Strasbourg Cedex 2 (France); Muller, D. [Laboratoire ICube, Université de Strasbourg, CNRS UMR 7357, 23 rue du Loess, B.P. 20, 67037 Strasbourg Cedex 2 (France); Abd-lefdil, M.; Hassanain, N. [Université Mohammed V- Agdal, Laboratoire de Physique des Matériaux, Faculté des Sciences, B.P. 1014, Rabat (Morocco); Petersen, J. [Department of Advanced Materials and Structure, Centre de Recherche Public Henri Tudor, 66 rue du Luxembourg, Esch/Alzette 4002 (Luxembourg); Berrada, A. [Université Mohammed V- Agdal, Laboratoire de Physique des Matériaux, Faculté des Sciences, B.P. 1014, Rabat (Morocco); Slaoui, A. [Laboratoire ICube, Université de Strasbourg, CNRS UMR 7357, 23 rue du Loess, B.P. 20, 67037 Strasbourg Cedex 2 (France); Dinia, A., E-mail: aziz.dinia@ipcms.u-strasbg.fr [Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS UMR 7504, 23 rue du Loess, B.P. 43, 67034 Strasbourg Cedex 2 (France)

    2014-09-01

    Undoped and Mo-doped ZnO (2% Mo) films about 1 μm thick were deposited by radio-frequency magnetron sputtering on Si(100) and glass substrates at 30 and 300 °C. X-ray diffraction patterns show that all films exhibit the hexagonal wurtzite crystal structure with a preferred orientation of the crystallites along the [002] direction. Plane view and cross-section transmission electron microscopy observations showed that the films present a columnar growth. Rutherford backscattering spectrometry indicates that Mo is homogeneously distributed inside the films. Scanning electron microscopy and atomic force microscopy show that Mo doping leads to a reduction of the grain size and surface roughness. According to X-ray photoelectron spectroscopy measurements, the valence of the Mo ions in the ZnO matrix is + 5 and + 6. Optical measurements in the UV–Visible range show a transmittance increasing from about 60 to 80% when increasing the wavelength from 400 to 800 nm. A sharp absorption onset is observed at about 375 nm corresponding to the fundamental absorption edge of ZnO at 3.26 eV. This gap value remains unchanged upon Mo doping. The Hall effect measurements carried out at room temperature show that both undoped and Mo-doped ZnO films present an n-type conduction. The 2% Mo doping increases the carrier concentration and decreases the resistivity measured in pure ZnO by about three orders of magnitude. A comparison with 2% Al-doped ZnO films grown in the same conditions underlines the important role of the preparation conditions on the transport properties of ZnO based transparent conductive oxides. - Highlights: • ZnO and Zn{sub 0.98}Mo{sub 0.02}O films were grown by sputtering on glass and Si(100). • The concentration of defects increases upon doping. • Mo ions with 5 + and 6 + valences are uniformly distributed inside the layers. • Transmittance varies between 60 and 80% in the visible range. • The conductivity increases by about three orders of magnitude

  3. Effect of the gate metal work function on water-gated ZnO thin-film transistor performance

    Science.gov (United States)

    Singh, Mandeep; Yusuf Mulla, Mohammad; Vittoria Santacroce, Maria; Magliulo, Maria; Di Franco, Cinzia; Manoli, Kyriaki; Altamura, Davide; Giannini, Cinzia; Cioffi, Nicola; Palazzo, Gerardo; Scamarcio, Gaetano; Torsi, Luisa

    2016-07-01

    ZnO thin films, prepared using a printing-compatible sol–gel method involving a thermal treatment below 400 °C, are proposed as active layers in water-gated thin-film transistors (WG-TFTs). The thin-film structure and surface morphology reveal the presence of contiguous ZnO crystalline (hexagonal wurtzite) with isotropic nano-grains as large as 10 nm characterized by a preferential orientation along the a-axis. The TFT devices are gated through a droplet of deionized water by means of electrodes characterized by different work functions. The high capacitance of the electrolyte allowed operation below 0.5 V. While the Ni, Pd, Au and Pt gate electrodes are electrochemically stable in the inspected potential range, electrochemical activity is revealed for the W one. Such an occurrence leads to an increase of capacitance (and current), which is ascribed to a high output current from the dissolution of a lower capacitance W-oxide layer. The environmental stability of the ZnO WG-TFTs is quite good over a period of five months.

  4. Effect of Fe incorporation on the optical behavior of ZnO thin films prepared by sol-gel derived spin coating techniques

    Science.gov (United States)

    Rakkesh, R. Ajay; Malathi, R.; Balakumar, S.

    2013-02-01

    In this work, Fe doped Zinc Oxide (ZnO) thin films were fabricated on the glass substrate by sol-gel derived spin coating technique. X-ray Diffraction studies revealed that the obtained pure and Fe doped ZnO thin films were in the wurtzite and spinel phase respectively. The three well defined Raman lines at 432, 543 and 1091 cm-1 also confirmed the lattice structure of the ZnO thin film has wurtzite symmetry. While doping Fe atoms in the ZnO, there was a significant change in the phase from wurtzite to spinel structure; owing to Fe (III) ions being incorporated into the lattice through substitution of Zn (II) ions. Room temperature PL spectra showed that the role of defect mediated red emissions at 612 nm was due to radial recombination of a photogenerated hole with an electron that belongs to the Fe atoms, which were discussed in detail.

  5. Optical constants and near infrared emission of Er doped ZnO sol–gel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vettumperumal, R. [P.G. and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi 627412, Tamil Nadu (India); Kalyanaraman, S., E-mail: mayura_priya2003@yahoo.co.in [P.G. and Research Department of Physics, Sri Paramakalyani College, Alwarkurichi 627412, Tamil Nadu (India); Thangavel, R., E-mail: rtvel_au@yahoo.co.in [Department of Applied Physics, Indian School of Mines, Dhanbad (India)

    2015-02-15

    Erbium (Er) doped zinc oxide (ZnO) sol–gel thin films were deposited on glass substrate using the spin coating method. The effect of erbium concentration and annealing temperature on structural and optical properties was studied. The annealed film was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray spectrum (EDX), micro-Raman, photoluminescence (PL) and UV–vis spectroscopy. All the films showed a wurtzite structure of polycrystalline nature with an average crystal size of 27.44 nm at 500 °C and 29.28 nm at 600 °C. The Raman spectra confirmed the absence of secondary phases in the Er doped ZnO films and the longitudinal optical phonon mode was upto the fifth order. Densely packed surfaces of the films were observed from SEM images. The presence and distribution of Zn, O and Er elements in the deposited films were confirmed by EDX analysis. The calculated value of exciton binding energy of ZnO film was 60 meV with a maximum value of 72 meV being observed for Er doped films. The near infra-red emission peak was observed at 1.63 eV through PL spectra studies. The average transmission was 80% with the calculated value of optical band gap being 3.26–3.32 eV. An increase in the refractive index value predicts the substitutional incorporation of Er ions in ZnO with the maximum optical conductivity being observed in the UV region. - Highlights: • Higher exciton binding energy in the doped ZnO films. • Near infrared emission is observed and better than ZnO. • Refractive index is calculated by theoretical and experimental means. • Maximum optical conductivity in the UV region.

  6. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Chebil, W., E-mail: Chbil.widad@live.fr [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse (Tunisia); Fargi, A. [Laboratoire de Microélectronique et Instrumentation, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’environnement, 5019 Monastir (Tunisia); Azeza, B.; Zaaboub, Z. [Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); and others

    2015-10-15

    Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

  7. Effect of depth of traps in ZnO polycrystalline thin films on ZnO-TFTs performance

    Science.gov (United States)

    Medina-Montes, Maria I.; Baldenegro-Perez, Leonardo A.; Sanchez-Zeferino, Raul; Rojas-Blanco, Lizeth; Becerril-Silva, Marcelino; Quevedo-Lopez, Manuel A.; Ramirez-Bon, Rafael

    2016-09-01

    ZnO thin films were processed by radio frequency magnetron sputtering at room temperature on p-Si/SiO2 substrates under pure argon (Ar:O2 = 100:0 vol.%) and argon-oxygen mixture (Ar:O2 = 99:1 vol.%) gas environment. Morphological, optical and electrical characteristics of the ZnO films are reported, and they show a clear relationship with the gas mixture employed for the sputtering process. Scanning Electron Microscopy revealed the formation of grains of 15.3 and 19.9 nm average sizes and thicknesses of 59 nm and 82 nm for films growth in pure argon and argon-oxygen, respectively. Photoluminescence measurements at room temperature showed the violet emission band (centered at 3 eV) which was only detected in the ZnO film grown under pure argon. From thermally stimulated conductivity measurements two traps with 0.27 and 0.14 eV activation energies were identified for films grown in pure argon and argon-oxygen mixture, respectively. The trap at 0.27 eV is associated with a level located below the conduction band edge and it is supported by the PL band centered at 3 eV. Both types of ZnO films were used as the active channel layer in thin film transistors with thermal SiO2 as gate dielectric. Field effect mobility, threshold voltage and current ratio were improved in the devices with ZnO channel deposited with the argon-oxygen mixture (99% Ar/1% O2 vol.). Threshold voltage decreased from 25 V to 15 V, field effect mobility and current ratio increased from 0.8 to 2.4 cm2/Vs and from 102 to 106, in that order.

  8. Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters.

    Science.gov (United States)

    Jeong, Yong Jin; An, Tae Kyu; Yun, Dong-Jin; Kim, Lae Ho; Park, Seonuk; Kim, Yebyeol; Nam, Sooji; Lee, Keun Hyung; Kim, Se Hyun; Jang, Jaeyoung; Park, Chan Eon

    2016-03-01

    Complementary inverters consisting of p-type organic and n-type metal oxide semiconductors have received considerable attention as key elements for realizing low-cost and large-area future electronics. Solution-processed ZnO thin-film transistors (TFTs) have great potential for use in hybrid complementary inverters as n-type load transistors because of the low cost of their fabrication process and natural abundance of active materials. The integration of a single ZnO TFT into an inverter requires the development of a simple patterning method as an alternative to conventional time-consuming and complicated photolithography techniques. In this study, we used a photocurable polymer precursor, zinc acrylate (or zinc diacrylate, ZDA), to conveniently fabricate photopatternable ZnO thin films for use as the active layers of n-type ZnO TFTs. UV-irradiated ZDA thin films became insoluble in developing solvent as the acrylate moiety photo-cross-linked; therefore, we were able to successfully photopattern solution-processed ZDA thin films using UV light. We studied the effects of addition of a tiny amount of indium dopant on the transistor characteristics of the photopatterned ZnO thin films and demonstrated low-voltage operation of the ZnO TFTs within ±3 V by utilizing Al2O3/TiO2 laminate thin films or ion-gels as gate dielectrics. By combining the ZnO TFTs with p-type pentacene TFTs, we successfully fabricated organic/inorganic hybrid complementary inverters using solution-processed and photopatterned ZnO TFTs. PMID:26840992

  9. Studies on visible light photocatalytic and antibacterial activities of nanostructured cobalt doped ZnO thin films prepared by sol-gel spin coating method

    Science.gov (United States)

    Poongodi, G.; Anandan, P.; Kumar, R. Mohan; Jayavel, R.

    2015-09-01

    Nanostructured cobalt doped ZnO thin films were deposited on glass substrate by sol-gel spin coating technique and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and UV-Vis spectroscopy. The XRD results showed that the thin films were well crystalline with hexagonal wurtzite structure. The results of EDAX and XPS revealed that Co was doped into ZnO structure. FESEM images revealed that the films possess granular morphology without any crack and confirm that Co doping decreases the grain size. UV-Vis transmission spectra show that the substitution of Co in ZnO leads to band gap narrowing. The Co doped ZnO films were found to exhibit improved photocatalytic activity for the degradation of methylene blue dye under visible light in comparison with the undoped ZnO film. The decrease in grain size and extending light absorption towards the visible region by Co doping in ZnO film contribute equally to the improved photocatalytic activity. The bactericidal efficiency of Co doped ZnO films were investigated against a Gram negative (Escherichia coli) and a Gram positive (Staphylococcus aureus) bacteria. The optical density (OD) measurement showed better bactericidal activity at higher level of Co doping in ZnO.

  10. Microwave-assisted low temperature fabrication of ZnO thin film electrodes for solar energy harvesting

    Energy Technology Data Exchange (ETDEWEB)

    Nirmal Peiris, T.A.; Sagu, Jagdeep S.; Hazim Yusof, Y.; Upul Wijayantha, K.G., E-mail: U.Wijayantha@lboro.ac.uk

    2015-09-01

    Metallic Zn thin films were electrodeposited on fluorine-doped tin oxide (FTO) glass substrates and oxidized under air by conventional radiant and microwave post-annealing methods to obtain ZnO thin film electrodes. The temperature of each post-annealing method was varied systematically and the photoelectrochemical (PEC) performance of electrodes was evaluated. The best photocurrent density achieved by the conventional radiant annealing method at 425 °C for 15 min was 93 μA cm{sup −2} at 1.23 V vs. NHE and the electrode showed an incident photon-to-electron conversion efficiency (IPCE) of 28.2%. X-ray diffractogram of this electrode showed that the oxidation of Zn to ZnO was not completed during the radiant annealing process as evident by the presence of metallic Zn in the electrode. For the electrode oxidized from Zn to ZnO under microwave irradiation, a photocurrent of 130 μA cm{sup −2} at 1.23 V vs. NHE and IPCE of 35.6% was observed after annealing for just 3 min, during which the temperature reached 250 °C. The photocurrent was 40% higher for the microwave annealed sample; this increase was attributed to higher surface area by preserving the nanostructure, confirmed by SEM surface topographical analysis, and better conversion yields to crystalline ZnO. Overall, it was demonstrated that oxidation of Zn to ZnO can be accomplished by microwave annealing five times faster than that of conventional annealing, thus resulting in a ~ 75% power saving. This study shows that microwave processing of materials offers significant economic and performance advantages for industrial scale up. - Highlights: • Conversion of Zn to ZnO by microwave and radiant annealing was conducted. • Microwave conversion was 5 times faster compared to radiant annealing. • Photoelectrochemical performance of microwave annealed ZnO was 40% higher. • Microwave annealing results in a 75% energy saving.

  11. ZnO Nanoparticles/Reduced Graphene Oxide Bilayer Thin Films for Improved NH3-Sensing Performances at Room Temperature.

    Science.gov (United States)

    Tai, Huiling; Yuan, Zhen; Zheng, Weijian; Ye, Zongbiao; Liu, Chunhua; Du, Xiaosong

    2016-12-01

    ZnO nanoparticles and graphene oxide (GO) thin film were deposited on gold interdigital electrodes (IDEs) in sequence via simple spraying process, which was further restored to ZnO/reduced graphene oxide (rGO) bilayer thin film by the thermal reduction treatment and employed for ammonia (NH3) detection at room temperature. rGO was identified by UV-vis absorption spectra and X-ray photoelectron spectroscope (XPS) analyses, and the adhesion between ZnO nanoparticles and rGO nanosheets might also be formed. The NH3-sensing performances of pure rGO film and ZnO/rGO bilayer films with different sprayed GO amounts were compared. The results showed that ZnO/rGO film sensors exhibited enhanced response properties, and the optimal GO amount of 1.5 ml was achieved. Furthermore, the optimal ZnO/rGO film sensor showed an excellent reversibility and fast response/recovery rate within the detection range of 10-50 ppm. Meanwhile, the sensor also displayed good repeatability and selectivity to NH3. However, the interference of water molecules on the prepared sensor is non-ignorable; some techniques should be researched to eliminate the effect of moisture in the further work. The remarkably enhanced NH3-sensing characteristics were speculated to be attributed to both the supporting role of ZnO nanoparticles film and accumulation heterojunction at the interface between ZnO and rGO. Thus, the proposed ZnO/rGO bilayer thin film sensor might give a promise for high-performance NH3-sensing applications. PMID:26956599

  12. ZnO Nanoparticles/Reduced Graphene Oxide Bilayer Thin Films for Improved NH3-Sensing Performances at Room Temperature

    Science.gov (United States)

    Tai, Huiling; Yuan, Zhen; Zheng, Weijian; Ye, Zongbiao; Liu, Chunhua; Du, Xiaosong

    2016-03-01

    ZnO nanoparticles and graphene oxide (GO) thin film were deposited on gold interdigital electrodes (IDEs) in sequence via simple spraying process, which was further restored to ZnO/reduced graphene oxide (rGO) bilayer thin film by the thermal reduction treatment and employed for ammonia (NH3) detection at room temperature. rGO was identified by UV-vis absorption spectra and X-ray photoelectron spectroscope (XPS) analyses, and the adhesion between ZnO nanoparticles and rGO nanosheets might also be formed. The NH3-sensing performances of pure rGO film and ZnO/rGO bilayer films with different sprayed GO amounts were compared. The results showed that ZnO/rGO film sensors exhibited enhanced response properties, and the optimal GO amount of 1.5 ml was achieved. Furthermore, the optimal ZnO/rGO film sensor showed an excellent reversibility and fast response/recovery rate within the detection range of 10-50 ppm. Meanwhile, the sensor also displayed good repeatability and selectivity to NH3. However, the interference of water molecules on the prepared sensor is non-ignorable; some techniques should be researched to eliminate the effect of moisture in the further work. The remarkably enhanced NH3-sensing characteristics were speculated to be attributed to both the supporting role of ZnO nanoparticles film and accumulation heterojunction at the interface between ZnO and rGO. Thus, the proposed ZnO/rGO bilayer thin film sensor might give a promise for high-performance NH3-sensing applications.

  13. Optical characterization of Mg-doped ZnO thin films deposited by RF magnetron sputtering technique

    Science.gov (United States)

    Singh, Satyendra Kumar; Hazra, Purnima; Tripathi, Shweta; Chakrabarti, P.

    2016-05-01

    This paper reports the in-depth analysis on optical characteristics of magnesium (Mg) doped zinc oxide (ZnO) thin films grown on p-silicon (Si) substrates by RF magnetron sputtering technique. The variable angle ellipsometer is used for the optical characterization of as-deposited thin films. The optical reflectance, transmission spectra and thickness of as-deposited thin films are measured in the spectral range of 300-800 nm with the help of the spectroscopic ellipsometer. The effect of Mg-doping on optical parameters such as optical bandgap, absorption coefficient, absorbance, extinction coefficient, refractive Index and dielectric constant for as-deposited thin films are extracted to show its application in optoelectronic and photonic devices.

  14. Reactive magnetron sputtering of Ni doped ZnO thin film: Investigation of optical, structural, mechanical and magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Siddheswaran, R., E-mail: rajendra@ntc.zcu.cz [New Technologies Research Centre, University of West Bohemia, Plzeň 30614 (Czech Republic); Netrvalová, Marie; Savková, Jarmila; Novák, Petr; Očenášek, Jan; Šutta, Pavol [New Technologies Research Centre, University of West Bohemia, Plzeň 30614 (Czech Republic); Kováč, Jaroslav [Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Il’kovičova 3, 81219 Bratislava (Slovakia); Jayavel, R. [Centre for Nanoscience and Technology, Anna University, Chennai 600025 (India)

    2015-07-05

    Highlights: • Highly preferred oriented [0 0 1] thin film columnar structure in ZnO:Ni from RF sputtering. • XRD confirmed the preferred orientation of ZnO structure from the only observed (0 0 2) plane. • Variation of refractive indices and optical band gap by doping of Ni in ZnO were studied. • Surface morphology and mechanical properties of the thin films were studied by SEM and AFM. • Critical concentration of Ni for the rise and enhancement of ferromagnetism was studied by VSM. - Abstract: Nickel doped ZnO (ZnO:Ni) thin films are considered to be promising materials for optoelectronic applications. The doping of transition metal ion modifies the optical and physical properties of the materials. Therefore, studies on optical and physical properties are important for such applications. In the present work, the ZnO:Ni thin films with different Ni concentrations were deposited on Si (1 0 0) and corning glass substrates at 400 °C by reactive magnetron sputtering using Ar and O{sub 2} gas mixture. The (0 0 2) growth plane of the ZnO was identified from the X-ray diffraction experiment. It was also confirmed that the films exhibit strong preferred orientation (texture) of crystalline columns in the direction [0 0 1] perpendicular to the substrate surface. The optical transmittance, band gap, and refractive indices of the thin films were studied by UV–Vis spectroscopy, photoluminescence and spectroscopic ellipsometry. The optical band gap and refractive index of the thin films decreased with increase of Ni content. The Raman and FT-IR spectroscopic studies were used to explain the modes of vibrations of the functional groups in the material. The surface topography, grain size, distribution, and fine structure of the thin films were analyzed by using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The hardness of the films was measured using a nanoindenter coupled with AFM. The growth of ferromagnetism by the effect of Ni content was

  15. Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

    Directory of Open Access Journals (Sweden)

    Fábio F. Vidor

    2016-08-01

    Full Text Available Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high-k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the ION/IOFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V/V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates.

  16. Deposition and characterization of ZnO thin films by modified pulsed-spray pyrolysis

    International Nuclear Information System (INIS)

    Zinc oxide (ZnO) thin films were deposited using modified pulsed-spray pyrolysis on glass substrates. Depositions were carried out using N2 as the carrier gas and analysed with respect to the rate of deposition. X-ray analysis revealed the presence of mixed crystallization with a nanocrystalline structure of about 6.9 nm dispersed in the amorphous matrix. A negative trend between the bandgap and resistivity was observed with the decrease in the deposition rate. A lowest bandgap of 3.1 eV with a resistivity value of 1.6 × 10−2 Ω cm was achieved at a lowest deposition rate of 1.3 nm min−1. Hot-probe measurement revealed the p-type conductivity for the film deposited at a lowest deposition rate of 1.3 nm min−1. Details about the influence of pulsed-spray deposition for the achievement of this negative trend between bandgap and resistivity will be discussed in this paper

  17. Study of Ultraviolet Emission Spectra in ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Y. M. Lu

    2013-01-01

    Full Text Available Photoluminescence (PL of ZnO thin films prepared on c-Al2O3 substrates by pulsed laser deposition (PLD are investigated. For all samples, roomtemperature (RT spectra show a strong band-edge ultraviolet (UV emission with a pronounced low-energy band tail. The origin of this UV emission is analyzed by the temperature dependence of PL spectra. The result shows that the UV emission at RT contains different recombination processes. At low temperature donor-bound exciton (D0X emission plays a major role in PL spectra, while the free exciton transition (FX gradually dominates the spectrum with increasing temperatures. It notes that at low temperature an emission band (FA appears in low energy side of D0X and FX and can survive up to RT. Further confirmation shows that the origin of the band FA can be attributed to the transitions of conduction band electrons to acceptors (e, A0, in which the acceptor binding energy is estimated to be approximately 121 meV. It is concluded that at room temperature UV emission originates from the corporate contributions of the free exciton and free electrons-to-acceptor transitions.

  18. A Comparative Study of Spin Coated Transparent Conducting Thin Films of Gallium and Aluminum Doped ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    A. Alkahlout

    2015-01-01

    Full Text Available Transparent conducting Ga:ZnO (GZO and Al:ZnO (AZO layers have been deposited by spin coating on glass substrates using crystalline nanoparticles redispersed in 1-propanol. The coatings have been sintered in air at 600°C for 15 min and then postannealed in a reducing atmosphere at 400°C for 90 min. The effect of Ga and Al doping on the structural, morphological, optical, and electrical properties of the obtained thin films was investigated. Both films were found to be crystalline with a hexagonal structure. A single step spin coated layer 52–56 nm thick is obtained. To increase the thickness and lower the obtained sheet resistance multilayers coatings have been used. The visible transmission of both layers is high (T>80%. The influence of the sintering temperature and the optimum doping concentration was investigated. Five layers synthesized with doping ratio of 1 mol.% and sintered at 600°C and then submitted to reducing treatment in forming gas exhibited a minimum resistivity value of 7.4 × 10−2 Ω·cm for GZO layer and 1.45 Ω·cm for AZO coating.

  19. Improvement in the negative bias temperature stability of ZnO based thin film transistors by Hf and Sn doping

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Woong-Sun; Moon, Yeon-Keon; Kim, Kyung-Taek; Shin, Sae-Young [Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, Seoul 133-791 (Korea, Republic of); Ahn, Byung Du; Lee, Je-Hun [Samsung Electronics Co., Ltd., LCD Business, San 24 Nongseo-dong, Giheung-gu, Yongin, Gyonggi-do 446-711 (Korea, Republic of); Park, Jong-Wan, E-mail: jwpark@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, Seoul 133-791 (Korea, Republic of)

    2011-08-01

    We assessed the performance of ZnO TFTs using Si{sub 3}N{sub 4} gate dielectrics after various treatments. A remarkable improvement in the transfer characteristics was obtained for the O{sub 2} plasma treated ZnO TFT and SiO{sub 2} interlayer deposited ZnO TFT. Also, we developed amorphous hafnium-zinc-tin oxide (HZTO) thin film transistors (TFTs) and investigated the influence of hafnium (Hf) doping on the electrical characteristics of the hafnium-zinc oxide (HZO) thin film transistors. Doping with Hf can decrease the carrier concentration, which may result from a decrease of the field effect mobility, and reduce oxygen vacancy related defects in the interfacial layer. Adding tin (Sn) can suppress the growth of a crystalline phase in the HZTO films. The HZTO TFTs exhibited good electrical properties with a field effect mobility of 14.33 cm{sup 2}/Vs, a subthreshold swing of 0.97 V/decade, and a high I{sub ON/OFF} ratio of over 10{sup 9}.

  20. 7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO thin film transistors

    Science.gov (United States)

    Huang, Jie; Lee, Mingun; Lucero, Antonio T.; Cheng, Lanxia; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    We demonstrate the fabrication of 7-octenytrichlorosilane (7-OTS)/trimethylaluminum (TMA) organic–inorganic hybrid films using molecular-atomic layer deposition (MALD). The properties of 7-OTS/TMA hybrid films are extensively investigated using transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), and electrical measurements. Our results suggest that uniform and smooth amorphous hybrid thin films with excellent insulating properties are obtained using the MALD process. Films have a relatively high dielectric constant of approximately 5.0 and low leakage current density. We fabricate zinc oxide (ZnO) based thin film transistors (TFTs) using 7-OTS/TMA hybrid material as a back gate dielectric with the top ZnO channel layer deposited in-situ via MALD. The ZnO TFTs exhibit a field effect mobility of approximately 0.43 cm2 V‑1 s‑1, a threshold voltage of approximately 1 V, and an on/off ratio of approximately 103 under low voltage operation (from ‑3 to 9 V). This work demonstrates an organic–inorganic hybrid gate dielectric material potentially useful in flexible electronics application.

  1. Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

    Science.gov (United States)

    Lim, Chul; Oh, Ji Young; Koo, Jae Bon; Park, Chan Woo; Jung, Soon-Won; Na, Bock Soon; Chu, Hye Yong

    2014-11-01

    Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices. PMID:25958581

  2. Influence of oxygen partial pressure on the microstructural and magnetic properties of Er-doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Wei-Bin Chen

    2015-06-01

    Full Text Available Er-doped ZnO thin films have been prepared by using inductively coupled plasma enhanced physical vapor deposition at different O2:Ar gas flow ratio (R = 0:30, 1:30, 1:15, 1:10 and 1:6. The influence of oxygen partial pressure on the structural, optical and magnetic properties was studied. It is found that an appropriate oxygen partial pressure (R=1:10 can produce the best crystalline quality with a maximum grain size. The internal strain, estimated by fitting the X-ray diffraction peaks, varied with oxygen partial pressure during growth. PL measurements show that plenty of defects, especially zinc vacancy, exist in Er-doped ZnO films. All the samples show room-temperature ferromagnetism. Importantly, the saturation magnetization exhibits similar dependency on oxygen partial pressure with the internal strain, which indicates that internal strain has an important effect on the magnetic properties of Er-doped ZnO thin films.

  3. Influence of oxygen partial pressure on the microstructural and magnetic properties of Er-doped ZnO thin films

    Science.gov (United States)

    Chen, Wei-Bin; Liu, Xue-Chao; Li, Fei; Chen, Hong-Ming; Zhou, Ren-Wei; Shi, Er-Wei

    2015-06-01

    Er-doped ZnO thin films have been prepared by using inductively coupled plasma enhanced physical vapor deposition at different O2:Ar gas flow ratio (R = 0:30, 1:30, 1:15, 1:10 and 1:6). The influence of oxygen partial pressure on the structural, optical and magnetic properties was studied. It is found that an appropriate oxygen partial pressure (R=1:10) can produce the best crystalline quality with a maximum grain size. The internal strain, estimated by fitting the X-ray diffraction peaks, varied with oxygen partial pressure during growth. PL measurements show that plenty of defects, especially zinc vacancy, exist in Er-doped ZnO films. All the samples show room-temperature ferromagnetism. Importantly, the saturation magnetization exhibits similar dependency on oxygen partial pressure with the internal strain, which indicates that internal strain has an important effect on the magnetic properties of Er-doped ZnO thin films.

  4. Effects of UV-ozone treatment on radio-frequency magnetron sputtered ZnO thin films

    International Nuclear Information System (INIS)

    The effects of UV-ozone treatment on ZnO thin films prepared by using radio-frequency magnetron sputtering are investigated. Decrease in the density of oxygen vacancy as well as increase in the density of oxygen interstitial were inferred from the UV-ozone treated samples. It was also found that a considerable difference in the work function (0.25 eV) is induced by UV-ozone treatment implying a shift in Fermi level. This shift was confirmed by capacitance-voltage measurements, which demonstrated that the boundary between the inversion region and the depletion region of a ZnO-based metal-oxide-semiconductor (MOS) capacitor positively shifts when UV ozone treated. Our results clearly indicate that the threshold voltage of a thin film transistor can be adjusted by modifying the ZnO surface via UV ozone treatment. MOS capacitors fabricated with UV-ozone treated HfO2 and/or ZnO also yielded a smaller leakage current (∼ 73%-90% smaller) and a larger breakdown voltage (∼ 8%-11% larger). The physical mechanism behind the effect of the UV ozone treatment is addressed in this study with the help of X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy.

  5. Theoretical study of the multiferroic properties in M-doped (M=Co, Cr, Mg) ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bahoosh, S.G. [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Apostolov, A.T. [University of Architecture, Civil Engineering and Geodesy, Faculty of Hydrotechnics, Department of Physics, 1, Hristo Smirnenski Blvd., 1046 Sofia (Bulgaria); Apostolova, I.N. [University of Forestry, Faculty of Forest Industry, 10, Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria); Trimper, S. [Institute of Physics, Martin-Luther-University, D-06099 Halle (Germany); Wesselinowa, Julia M. [University of Sofia, Department of Physics, Blvd. J. Bouchier 5, 1164 Sofia (Bulgaria)

    2015-01-01

    The origin of multiferroism is still an open problem in ZnO. We propose a microscopic model to clarify the occurrence of multiferroism in this material. Using Green's function technique we study the influence of ion doping and size effects on the magnetization and polarization of ZnO thin films. The calculations for magnetic Co- and Cr-ions are based on the s–d model, the transverse Ising model in terms of pseudo-spins and a biquadratic magnetoelectric coupling, whereas in case of nonmagnetic Mg-ions the model takes into account the Coulomb interaction and an indirect coupling between the pseudo-spins via the conduction electrons. We show that the magnetization M exhibits a maximum for a fixed concentration of the doping ions. Furthermore M increases with decreasing film thickness N. The polarization increases with increasing concentration of the dopant and decreasing N. The results are in good agreement with the experimental data. - Highlights: • The paper analyzes the multiferroic properties of doped ZnO thin films by a microscopic model. • The magnetization exhibits a maximum at a fixed doping concentration. • The polarization increases with growing dopant concentration. • The ferroelectric transition temperature is enhanced for increasing dopant concentration.

  6. RETRACTED: Investigation of structural, optical and electronic properties in Al-Sn co-doped ZnO thin films

    Science.gov (United States)

    Pan, Zhanchang; Tian, Xinlong; Wu, Shoukun; Yu, Xia; Li, Zhuliang; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

    2013-01-01

    This article has been retracted: please see Elsevier Policy on Article Withdrawal (http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Editor-in-Chief. Figures 3 and 4 of this paper have also been presented as belonging to other materials in other publications. This observation is evidence of fraud and therefore it is not certain that the described research and conclusions of this paper belong to the presented images. Figures 3 and 4 of this paper can also be found in: Effect of annealing on the structures and properties of Al and F co-doped ZnO nanostructures, Materials Science in Semiconductor Processing, 2014, 17, 162-167, http://dx.doi.org/10.1016/j.mssp.2013.09.023 Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol-gel method, Journal of Alloys and Compounds, 2014,583, 32-38, http://dx.doi.org/10.1016/j.jallcom.2013.06.192 Properties of fluorine and tin co-doped ZnO thin films deposited by sol-gel method, Journal of Alloys and Compounds, 2013,576, 31-37, http://dx.doi.org/10.1016/j.jallcom.2013.04.132

  7. Effect of deposition parameters and strontium doping on characteristics of nanostructured ZnO thin film by chemical bath deposition method

    Science.gov (United States)

    Sheeba, N. H.; Naduvath, J.; Abraham, A.; Weiss, M. P.; Diener, Z. J.; Remillard, S. K.; DeYoung, P. A.; Philip, R. R.

    2014-10-01

    Polycrystalline thin films of ZnO and Sr-doped ZnO (ZnO:Sr) on ultrasonically cleaned soda lime glass substrates are synthesized through successive ionic layer adsorption and reaction. The XRD profiles of ZnO and ZnO:Sr films prepared at different number of deposition cycles exhibit hexagonal wurtzite structure with preferred orientation along (002) direction. The crystallites are found to be nano sized, having variation in size with the increase in number of depositions cycles and also with Sr doping. Optical absorbance studies reveal a systematically controllable blueshift in band gap of Sr-doped ZnO films. SEM images indicate enhanced assembling of crystallites to form elongated rods as number of dips increased in Sr doped ZnO. The films are found to be n-type with the Sr doping having little effect on the electrical properties.

  8. Transparent Conductive Al-Doped ZnO/Cu Bilayer Films Grown on Polymer Substrates at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    黄继杰; 王钰萍; 吕建国; 龚丽; 叶志镇

    2011-01-01

    Al-doped ZnO (AZO)/Cu bi-layer films are deposited by dc magnetron sputtering on polycarbonate substrates at room temperature. The structural, electrical and optical properties of the films are investigated at various sputtering powers of the Cu layer. The AZO/Cu bi-layer film deposited at a moderate sputtering power of 180 W for the Cu layer displayed the highest figure of merit of 3.47 x 10~3 Ω-1, with a low sheet resistance of12.38Ω/sq, an acceptable visible transmittance of 73%, and a high near-infrared reflectance of about 50%.%Al-doped ZnO(AZO)/Cu bi-layer films are deposited by dc magnetron sputtering on polycarbonate substrates at room temperature.The structural,electrical and optical properties of the films are investigated at various sputtering powers of the Cu layer.The AZO/Cu bi-layer film deposited at a moderate sputtering power of 180 W for the Cu layer displayed the highest figure of merit of 3.47 × 10-3 Ω-1,with a low sheet resistance of 12.38Ω/sq,an acceptable visible transmittance of 73%,and a high near-infrared reflectance of about 50%.

  9. Ferromagnetism in laser ablated ZnO and Mn-doped ZnO thin films: A comparative study from magnetization and Hall effect measurements

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen Hoa Hong, E-mail: nguyen.hoahong@univ-tours.f [Laboratoire LEMA, UMR 6157 CNRS - Universite F. Rabelais, Parc de Grandmont, 37200 Tours (France); Chikoidze, Ekaterina; Dumont, Yves [Laboratoire GeMAC, UMR 8635 CNRS - Universite de Versailles, Place A. Briand, 92195 Meudon (France)

    2009-11-15

    Room temperature FM was observed in pristine ZnO thin films grown by pulsed laser deposition on Al{sub 2}O{sub 3} substrates. It seems to originate from other defects but not oxygen vacancies. Magnetization of thinner films is much larger than that of the thicker films, indicating that defects are mostly located at the surface and/or the interface between the film and the substrate. Data on the Fe:ZnO and Mn:ZnO films show that a transition-metal doping does not play any essential role in introducing the magnetism into ZnO. In the case of Mn doping, the magnetic moment could be very slightly enhanced. Hall effect measurements reveal that an incorporation of Mn does not change the carrier type, but decreases the carrier concentration, and increases the Hall mobility, resulting in more resistive Mn:ZnO films. Since no anomalous Hall effect was observed, it is understood that the observed FM is not due to the interaction between the free-carrier and the Mn impurity.

  10. Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

    International Nuclear Information System (INIS)

    In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells

  11. Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha; Louis, Godfrey; Vijayakumar, K. P., E-mail: kpv@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Cochin-682022 (India); Kumar, K. Rajeev [Department of Instrumentation, Cochin University of Science and Technology, Cochin-682022 (India)

    2015-06-24

    In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin film solar cells.

  12. Thin-film ZnO as micromechanical actuator at low frequencies

    NARCIS (Netherlands)

    Blom, F.R.; IJntema, D.J.; Pol, van de F.C.M.; Elwenspoek, M.; Fluitman, J.H.J.; Popma, Th.J.A.

    1990-01-01

    A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric

  13. Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

    KAUST Repository

    Phadke, Sujay

    2011-09-30

    Factors affecting charge transport through ZnO nanowire mat films were studied by aligning ZnO nanowires on substrates and coupling experimental measurements with 2D nanowire network simulations. Gallium doped ZnO nanowires were aligned on thermally oxidized silicon wafer by shearing a nanowire dispersion in ethanol. Sheet resistances of nanowire thin films that had current flowing parallel to nanowire alignment direction were compared to thin films that had current flowing perpendicular to nanowire alignment direction. Perpendicular devices showed ∼5 fold greater sheet resistance than parallel devices supporting the hypothesis that aligning nanowires would increase conductivity of ZnO nanowire electrodes. 2-D nanowire network simulations of thin films showed that the device sheet resistance was dominated by inter-wire contact resistance. For a given resistivity of ZnO nanowires, the thin film electrodes would have the lowest possible sheet resistance if the inter-wire contact resistance was one order of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using an innovative shear coating technique. Nanowire alignment has shown improvement in ZnO nanowire transparent electrode conductivity. 2D network simulations in conjunction with electrical measurements have revealed different regimes of operation of nanowire thin films and provided a guideline for improving electrical performance of nanowire electrodes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

    KAUST Repository

    Flemban, T. H.

    2016-02-08

    Gd-doped ZnO thin films were prepared using pulsed laser deposition at different oxygen pressures and varied Gd concentrations. The effects of oxygen deficiency-related defects on the Gd incorporation, optical and structural properties, were explored by studying the impact of oxygen pressure during deposition and post-growth thermal annealing in vacuum. Rutherford Backscattering Spectrometry revealed that the Gd concentration increases with increasing oxygen pressure for samples grown with the same Gd-doped ZnO target. Unexpectedly, the c-lattice parameter of the samples tends to decrease with increasing Gd concentration, suggesting that Gd-defect complexes play an important role in the structural properties. Using low-temperature photoluminescence(PL), Raman measurements and density functional theory calculations, we identified oxygen vacancies as the dominant intrinsic point defects. PL spectra show a defect band related to oxygen vacancies for samples grown at oxygen deficiency.

  15. Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO

    International Nuclear Information System (INIS)

    We present positron annihilation results on Sb-doped SnO2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO2 the concentrations appear too low to cause significant compensation. (invited article)

  16. Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

    KAUST Repository

    Baseer Haider, M.

    2015-01-01

    Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.

  17. Effect of Tertiary Amines on Structural, Morphological and Optical Properties of Nanostructured ZnO Thin Film

    Directory of Open Access Journals (Sweden)

    Mohammad Reza Golobostanfard

    2012-03-01

    Full Text Available Nanostructured ZnO thin film has been synthesized via sol-gel method. In this study, effect of stabilizer, as a vital part of sol with different molar ratios of stabilizer to Zn (stabilizer/Zn  0.25, 0.5, 1, 2, on structural, morphological and optoelectronic properties of ZnO thin film has been investigated. Triehtylamine (TeA and triethanolamine (TEA, as two important tertiary amines for synthesize of ZnO, has been used. Spin coating technique performed to deposition of sol on glass substrate and after deposition process, the samples clacined at 500 C. X-ray diffraction method conducted in order to find structural properties of the films. The results showed the formation of hexagonal wurtzite ZnO as well as increasing the unit cell parameters by increasing TeA content. Field emission scanning electron microscopy (FESEM used in order to see morphological changes for different molar ratios of stabilizer to Zn. The images demonstrate grain segregation in TeA samples by increasing TeA molar ratio. Also, in TEA samples, formation of micro holes in TEA/Zn  0.5 and smaller grain size for higher TEA ratios has been observed. UV-Vis spectroscopy was employed to obtain optoelectronic properties and the results have shown dependence of optical band gap to stabilizer’s type and content. Nanostructured ZnO thin film has been synthesized via sol-gel method. In this study, effect of stabilizer, as a vital part of sol with different molar ratios of stabilizer to Zn (stabilizer/Zn  0.25, 0.5, 1, 2, on structural, morphological and optoelectronic properties of ZnO thin film has been investigated. Triehtylamine (TeA and triethanolamine (TEA, as two important tertiary amines for synthesize of ZnO, has been used. Spin coating technique performed to deposition of sol on glass substrate and after deposition process, the samples clacined at 500 C. X-ray diffraction method conducted in order to find structural properties of the films. The

  18. Effect of oxygen partial pressure on the photoluminescence properties of sol–gel synthesized nano-structured ZnO thin films

    International Nuclear Information System (INIS)

    Nanostructured ZnO thin films were prepared by spin coating on glass substrate. The precursor ZnO gel powder was thoroughly characterized by particle size measurement, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy and selected area diffraction pattern analyses. The sol on heating at 450–650 °C resulted in the formation of dried mass with particle size in the range of 30–40 nm. The photoluminescence (PL) peak of ZnO thin film heat treated at 450 °C for different periods appeared at 400 nm. But when the film was heat treated at the same temperature (450 °C) under reducing atmosphere, another PL peak appeared at 443 nm. Heat treatment of the film at 650 °C for 3 h under reducing atmosphere resulted in the appearance of PL peaks at 500 and 555 nm. The PL peaks developed were related to the defect states of zinc oxide lattice developed at different oxygen partial pressures during the heat treatment. - Highlights: • Nano-structured ZnO thin films were prepared by spin coating. • Heat treatment at different conditions generates different defect states in ZnO. • The defect states control photoluminescence of ZnO at 400, 443, 500 and 555 nm

  19. Blue Cathodoluminescence from Highly Er-Doped ZnO Thin Films Induced by the Phonon Bottleneck Effect

    Institute of Scientific and Technical Information of China (English)

    张喜田; 刘益春; 马剑刚; 吕有明; 申德振; 许武; 钟国柱; 范希武

    2003-01-01

    The room-temperature blue cathodoluminescence (CL) from highly Er-doped ZnO thin films has been studied by using different electron beam currents (EBCs). The ZnO:Er thin films used in our experiment were prepared by simultaneous evaporation from two sources. The x-ray diffraction spectra show that the thin films have a strong preferential c-axis (0002) orientation with a hexagonal crystalline structure. The blue emission at 455 nm originating from the intra-4 f shell transition (4F5/2.4I15/2) in Er3+ ions was observed at room temperature. The nonlinear dependence of the CL intensity on the EBC shows a more intense blue emission above the threshold EBC of 0. 6 μA, which is attributed to the phonon bottleneck effect.

  20. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    International Nuclear Information System (INIS)

    Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics

  1. Oxygen partial pressure dependent electrical conductivity type conversion of phosphorus-doped ZnO thin films

    International Nuclear Information System (INIS)

    In this study, the oxygen partial pressure dependent physical properties of phosphorous-doped ZnO thin films were investigated. All thin films, grown on Al2O3(0 0 0 1) substrates using pulsed laser deposition, exhibited (0 0 2) orientation regardless of the oxygen partial pressure. However, as the oxygen partial pressure increased, the degree of crystallinity and the concentration of oxygen vacancies in the films decreased. All the thin-film samples showed n-type characteristics except for a sample grown at 100 mTorr, which exhibited p-type characteristics. The optical band gap energy also changed with the oxygen partial pressure. The feasible microscopic mechanism of conductivity conversion is explained in terms of the lattice constant, crystallinity, and the relative roles of the substituted phosphorous in the Zn-site and/or oxygen vacancies depending on the oxygen partial pressure. (paper)

  2. Enhancement in conductivity through Ga, Al dual doping of ZnO nanofibers

    Energy Technology Data Exchange (ETDEWEB)

    Park, Minkyu; Han, Seung Min, E-mail: smhan01@kaist.ac.kr

    2015-09-01

    In this study, electrical conductivity of Al doped ZnO nanofiber was enhanced by using Ga co-doping over the maximum conductivity achievable with only Al dopants of 2 at.% in ZnO. Al and Ga have different atomic sizes that results in further doping with Ga up to 1 at.%. Al, Ga co-doped ZnO nanofiber was fabricated by using electrospinning technique and structural analysis was investigated by X-ray diffraction. X-ray analysis indicates a change in lattice parameter(a-axis) of doped ZnO from 3.2497 Å to 3.2483 Å with added 1 at.% Al and from 3.2497 Å to 3.2488 Å with co-doping of 1 at.% Ga on top of the 2 at.% of Al doped ZnO. Therefore, Ga was incorporated into Al doped ZnO nanofiber without significant lattice parameter and grain size reduction to result in the enhanced conductivity up to a maximum value of 9.57 × 10{sup −3} S/cm. - Highlights: • Al, Ga co-doped ZnO nanofiber is synthesized by electrospinning methods. • Al, Ga co-doped nanofiber shows the higher electrical conductivity compared to Al doped ZnO nanofiber. • AGZO nanofiber shows higher conductivity due to its higher crystallinity.

  3. Electrical properties of ZnO thin films grown by MOCVD

    International Nuclear Information System (INIS)

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies

  4. Advanced LPCVD ZnO - Challenges in application for thin film solar cells and modules

    OpenAIRE

    Messerschmidt, Daniel; Aebi, Philipp

    2014-01-01

    Ethanol is used as a precursor during the growth of zinc oxide (ZnO) by low-pressure chemical vapor deposition (LPCVD). By adding ethanol, the surface of the deposited ZnO layer is flattened and its roughness is decreased about sevenfold. The layers become increasingly stressed and their resistivity grows significantly. The present work proposes an explanation for the observed behavior based on the catalytic decomposition of ethanol at the ZnO surface and on the growth of selected crystal plane...

  5. Investigation on the Electrical and Methane Gas-Sensing Properties of ZnO Thin Films Produced by Different Methods

    Science.gov (United States)

    Teimoori, F.; Khojier, K.; Dehnavi, N. Z.

    2016-10-01

    In this work, the influence of deposition method on the structural, electrical, and methane gas-sensing properties of ZnO thin films is investigated. Sol-gel spin coating, direct current (DC) magnetron sputtering, and e-beam evaporation techniques are employed for production of Zn thin films post-annealed at 500°C with a constant flow of oxygen. Detailed morphological, chemical, and structural investigations are carried out on all samples by field emission electron microscopy (FESEM) and x-ray diffraction (XRD) analyses. DC electrical resistivity of the samples was measured using a four-point probe instrument while a Hall effect instrument was used for the Hall effect measurements. The sensing performance was optimized with respect to the deposition method as well as the operating temperature. Detection limit, reproducibility, and stability of all samples produced using different methods are also identified. An optimum operating temperature of 350°C is obtained. The best sensitivity was attributed to the deposited film by the e-beam evaporation method due to its different surface morphology, which provided a larger ratio of surface-to-bulk area, and a lower carrier concentration, which caused higher electrical resistance. All ZnO thin films deposited by different methods also showed good reproducibility and stability.

  6. Investigation on the Electrical and Methane Gas-Sensing Properties of ZnO Thin Films Produced by Different Methods

    Science.gov (United States)

    Teimoori, F.; Khojier, K.; Dehnavi, N. Z.

    2016-06-01

    In this work, the influence of deposition method on the structural, electrical, and methane gas-sensing properties of ZnO thin films is investigated. Sol-gel spin coating, direct current (DC) magnetron sputtering, and e-beam evaporation techniques are employed for production of Zn thin films post-annealed at 500°C with a constant flow of oxygen. Detailed morphological, chemical, and structural investigations are carried out on all samples by field emission electron microscopy (FESEM) and x-ray diffraction (XRD) analyses. DC electrical resistivity of the samples was measured using a four-point probe instrument while a Hall effect instrument was used for the Hall effect measurements. The sensing performance was optimized with respect to the deposition method as well as the operating temperature. Detection limit, reproducibility, and stability of all samples produced using different methods are also identified. An optimum operating temperature of 350°C is obtained. The best sensitivity was attributed to the deposited film by the e-beam evaporation method due to its different surface morphology, which provided a larger ratio of surface-to-bulk area, and a lower carrier concentration, which caused higher electrical resistance. All ZnO thin films deposited by different methods also showed good reproducibility and stability.

  7. Photoluminescence studies of ZnO thin films on R-plane sapphire substrates grown by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Su [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of); Nam, Giwoong; Kim, Soaram [Department of Nano Engineering, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of); Kim, Do Yeob [Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634 (United States); Lee, Dong-Yul [LED R and D team, Samsung Electronics Co. Ltd., Yongin 446-711 (Korea, Republic of); Kim, Jin Soo [Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Chonbuk National University, Jeonju, Chonbuk 561-756 (Korea, Republic of); Kim, Sung-O [Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, SC 29634 (United States); Kim, Jong Su [Department of Physics, Yeungnam University, Gyeongsan, Gyeongsangbuk-do 712-749 (Korea, Republic of); Son, Jeong-Sik [Department of Visual Optics, Kyungwoon University, Gumi, Gyeongsangbuk-do 730-850 (Korea, Republic of); Leem, Jae-Young, E-mail: jyleem@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749 (Korea, Republic of)

    2012-10-15

    Zinc oxide (ZnO) thin films on R-plane sapphire substrates were grown by the sol-gel spin-coating method. The optical properties of the ZnO thin films were investigated using photoluminescence. In the UV range, the asymmetric near-band-edge emission was observed at 300 K, which consisted of two emissions at 3.338 and 3.279 eV. Eight peaks at 3.418, 3.402, 3.360, 3.288, 3.216, 3.145, 3.074, and 3.004 eV, which respectively correspond to the free exciton (FX), bound exciton, transverse optical (TO) phonon replica of FX recombination, and first-order longitudinal optical phonon replica of FX and the TO (1LO+TO), 2LO+TO, 3LO+TO, 4LO+TO, and 5LO+TO, were obtained at 12 K. From the temperature-dependent PL, it was found that the emission peaks at 3.338 and 3.279 eV corresponded to the FX and TO, respectively. The activation energy of the FX and TO emission peaks was found to be about 39.3 and 28.9 meV, respectively. The values of the fitting parameters of Varshni's empirical equation were {alpha}=4 Multiplication-Sign 10{sup -3} eV/K and {beta}=4.9 Multiplication-Sign 10{sup 3} K, and the S factor of the ZnO thin films was 0.658. With increasing temperature, the exciton radiative lifetime of the FX and TO emissions increased. The temperature-dependent variation of the exciton radiative lifetime for the TO emission was slightly higher than that for the FX emission. - Highlights: Black-Right-Pointing-Pointer ZnO thin films on R-plane sapphire substrates were grown by sol-gel method. Black-Right-Pointing-Pointer Two emission peaks at 3.338 and 3.279 eV were observed at 300 K Black-Right-Pointing-Pointer Activation energies of the two peaks were 39.3 and 28.9 meV,respectively. Black-Right-Pointing-Pointer Exciton radiative lifetime of the two peaks increased with increasing temperature.

  8. Enhancement of photo sensor properties of nanocrystalline ZnO thin film by swift heavy ion irradiation

    International Nuclear Information System (INIS)

    Nanocrystalline Zinc Oxide (ZnO) thin film prepared by Low cost Successive Ionic Layer Adsorption and Reaction (SILAR) method. This film was irradiated by 120 MeV Ni7+ ions with the fluence of 5x1012ions/cm2. The X-ray diffraction study was shows polycrystalline nature with wurtzite structure. The optical properties as absorbance were determined using UV-Spectrophotometer and band gap was also calculated. The Photo Sensor nature was calculated by I-V characteristics with different sources of light 40W, 60W and 100W

  9. Thickness dependence of the structural and electrical properties of ZnO thermal-evaporated thin films

    Indian Academy of Sciences (India)

    A Ghaderi; S M Elahi; S Solaymani; M Naseri; M Ahmadirad; S Bahrami; A E Khalili

    2011-12-01

    ZnO thin films of different thicknesses were prepared by thermal evaporation on glass substrates at room temperature. Deposition process was carried out in a vapour pressure of about 5.54 × 10-5 mbar. The substrate–target distance was kept constant during the process. By XRD and AFM techniques the microstructural characteristics and their changes with variation in thickness were studied. Electrical resistivity and conductivity of samples vs. temperature were investigated by four-probe method. It was shown that an increase in thickness causes a decrease in activation energy.

  10. Enhancement of photo sensor properties of nanocrystalline ZnO thin film by swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Mahajan, S. V.; Upadhye, D. S.; Bagul, S. B. [Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India); Shaikh, S. U.; Birajadar, R. B.; Siddiqui, F. Y.; Huse, N. P. [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India); Sharma, R. B., E-mail: ramphalsharma@yahoo.com, E-mail: rps.phy@gmail.com [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India); Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (India)

    2015-06-24

    Nanocrystalline Zinc Oxide (ZnO) thin film prepared by Low cost Successive Ionic Layer Adsorption and Reaction (SILAR) method. This film was irradiated by 120 MeV Ni{sup 7+} ions with the fluence of 5x10{sup 12}ions/cm{sup 2}. The X-ray diffraction study was shows polycrystalline nature with wurtzite structure. The optical properties as absorbance were determined using UV-Spectrophotometer and band gap was also calculated. The Photo Sensor nature was calculated by I-V characteristics with different sources of light 40W, 60W and 100W.

  11. Effect of Cd dopant on electrical and optical properties of ZnO thin films prepared by spray pyrolysis route

    Energy Technology Data Exchange (ETDEWEB)

    Acharya, A.D., E-mail: acharyaphysics2011@gmail.com [School of Studies in Physics, Vikram University, Ujjain, 456010, MP (India); Moghe, Shweta [School of Studies in Physics, Vikram University, Ujjain, 456010, MP (India); Panda, Richa [Acropolis Institute of Technology and Research Bhopal, MP (India); Shrivastava, S.B. [School of Studies in Physics, Vikram University, Ujjain, 456010, MP (India); Gangrade, Mohan; Shripathi, T.; Phase, D.M.; Ganesan, V. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, MP 452001 (India)

    2012-12-15

    Cd doped ZnO (Cd:ZnO) thin films on the glass substrate prepared by chemical spray pyrolysis technique have been characterized for their optical and electrical properties. The X-ray diffraction and atomic force microscopy results indicate that the crystalline quality degrade due to higher Cd doping in ZnO. The activation energy was found to be decreased when Cd concentration increased. The absorption edge of Cd:ZnO film was found to be red shifted. The direct modulation of band gap caused by Zn/Cd substitution is responsible for the red shift effect in absorption edge of ZnO. The low temperature conduction has been explained by variable range hoping mechanism, which fits very well in the temperature range from 108 K to 301 K. The interaction between Cd and defects in ZnCdO alloy to understand the important roles of Cd in the formation of native defects has also been tentatively discussed. - Highlights: Black-Right-Pointing-Pointer Good adherent films of Cd:ZnO prepared by spray pyrolysis technique Black-Right-Pointing-Pointer Modulation of band gap caused by Zn/Cd substitution responsible for red shift effect Black-Right-Pointing-Pointer Low temperature conduction explained by variable range hoping (VRH) mechanism Black-Right-Pointing-Pointer VRH suggests that the density of states decreases with the increase in Cd. Black-Right-Pointing-Pointer Important role of Cd in the formation of native defects is tentatively discussed.

  12. Analysis of Band-Edge Dynamics in ZnO and MgZnO Thin Films

    Science.gov (United States)

    Canul, Amrah

    This work investigates the temperature dependence of electron states at the band-edge in ZnO and Mg0.07Zn0.93O thin films. To investigate the band-edge dynamics, we study in-gap states via temperature dependent absorption spectroscopy in the range 77-500K. The in-gap states at the band-edge were analyzed via the Urbach energy model, where the Urbach Energy is a measure of the extent of states into the bandgap. In parallel, we also analyze the temperature dependent Urbach energy via the Wasim model, which separates the relative contributions of defect states and temperature dependent phonon modes to the in-gap states. It was found that the defect contribution to in-gap states at the band-edge was significantly higher for Mg0.07Zn0.93O than in ZnO. Additionally, the phonon contribution to in-gap states was less in Mg 0.07Zn0.93O than in ZnO. The author gratefully acknowledges the National Science Foundation and the U.S. Department of Energy, Office of Basic Energy Science, Division of Materials Science and Engineering under Grant No. DE-FG02-07ER46386.

  13. Broad-band three dimensional nanocave ZnO thin film photodetectors enhanced by Au surface plasmon resonance.

    Science.gov (United States)

    Sun, Mengwei; Xu, Zhen; Yin, Min; Lin, Qingfeng; Lu, Linfeng; Xue, Xinzhong; Zhu, Xufei; Cui, Yanxia; Fan, Zhiyong; Ding, Yiling; Tian, Li; Wang, Hui; Chen, Xiaoyuan; Li, Dongdong

    2016-04-28

    ZnO semiconductor films with periodic 3D nanocave patterns were fabricated by the thermal nanoimprinting technology, which is promising for photodetectors with enhanced light harvesting capability. The Au nanoparticles were further introduced into the ZnO films, which boosts the UV response of ZnO films and extends the photodetection to visible regions. The best UV photoresponse was detected on the 3D nanocave ZnO-Au hybrid films, attributing to the light trapping mechanism of 3D periodic structures and the driving force of the Schottky barrier at the ZnO/Au interface, while the high visible photoresponse of ZnO-Au hybrid films mainly results from the hot electron generation and injection process over the Schottky junctions mediated by Au surface plasmon resonances. The work provides a cost-effective pathway to develop large-scale periodic 3D nanopatterned thin film photodetectors and is promising for the future deployment of high performance optoelectronic devices. PMID:27073045

  14. Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition.

    Science.gov (United States)

    Lin, Yuan-Yu; Hsu, Che-Chen; Tseng, Ming-Hung; Shyue, Jing-Jong; Tsai, Feng-Yu

    2015-10-14

    Passivation is a challenging issue for the oxide thin-film transistor (TFT) technologies because it requires prolonged high-temperature annealing treatments to remedy defects produced in the process, which greatly limits its manufacturability as well as its compatibility with temperature-sensitive materials such as flexible plastic substrates. This study investigates the defect-formation mechanisms incurred by atomic layer deposition (ALD) passivation processes on ZnO TFTs, based on which we demonstrate for the first time degradation-free passivation of ZnO TFTs by a TiO2/Al2O3 nanolaminated (TAO) film deposited by a low-temperature (110 °C) ALD process. By combining the TAO passivation film with ALD dielectric and channel layers into an integrated low-temperature ALD process, we successfully fabricate flexible ZnO TFTs on plastics. Thanks to the exceptional gas-barrier property of the TAO film (water vapor transmission rate (WVTR)20 cm2 V(-1) s(-1), subthreshold swing10,000 s), air-storage (>1200 h), and bending (1.3 cm radius for 1000 times).

  15. Effects of Al and Mn Dopant on Structural and Optical Properties of ZnO Thin Film Prepared by Sol-Gel Route

    Directory of Open Access Journals (Sweden)

    Sumetha SUWANBOON

    2007-01-01

    Full Text Available Undoped, 10 wt% Al and 10 wt% Mn doped ZnO thin films were deposited on a glass substrate by sol-gel dip coating. Al ions played an important role in improvement of the c-axis orientation, while Mn ions inhibited the growth along c-axis. The average grain size decreased when doping ZnO with Al and Mn. The smallest average grain size was 25 nm, obtained with 10 wt% Mn doping. The band gap values of prepared thin films varied in the range of 3.24 - 3.96 eV.

  16. Microtron Irradiation Induced Tuning of Band Gap and Photoresponse of Al-ZnO Thin Films Synthesized by mSILAR

    Science.gov (United States)

    Thomas, Deepu; Augustine, Simon; Sadasivuni, Kishor Kumar; Ponnamma, Deepalekshmi; Alhaddad, Ahmad Yaser; Cabibihan, John-John; Vijayalakshmi, K. A.

    2016-10-01

    Al-doped polycrystalline nano ZnO (Al-ZnO) thin films with different doping concentrations were successfully prepared by the microwave-assisted successive ionic layer adsorption and reaction (mSILAR) technique. The structural analysis along with the orientation of the prepared films was examined by powder x-ray diffraction (PXRD) patterns. The deposited film is polycrystalline and the (002) orientation enhanced upon doping. Additional investigations were carried out to study the effect of electron beam irradiation (e--irradiation) on the band gap and photoconductivity of both irradiated and unirradiated samples. Both the Al doping and e--irradiation led to the enhancement of the photoconductivity of prepared materials. This property enables us to tune the properties of materials for various applications by controlling dopant concentrations and e--irradiation. The dependence of photocurrent on e--irradiation of Al-ZnO thin films was not reported previously. Therefore, Al-doped polycrystalline nano-ZnO thin film is a promising material for band gap engineering and for the development of solar cells.

  17. Effects of growth temperature on the structural and the optical properties of ZnO thin films on porous silicon grown by using plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Su; Kim, Soa Ram; Yim, Kwang Gug; Leem, Jae Young; Nam, Gi Woong [Inje University, Gimhae (Korea, Republic of); Kim, Do Yeob [Clemson University, Clemson, South Carolina (United States); Lee, Dong Yul [Samsung Electronics Co. Ltd., Yongin (Korea, Republic of); Kim, Jin Soo [Chonbuk National University, Jeonju (Korea, Republic of); Kim, Jong Su [Yeungnam University, Gyeongsan (Korea, Republic of); Son, Jeong Sik [Kyungwoon University, Gumi (Korea, Republic of)

    2012-05-15

    Zinc oxide (ZnO) thin films were grown on Si and porous silicon (PS) at different growth temperatures in the range from 150 to 550 .deg. C by using plasma-assisted molecular beam epitaxy (PA-MBE). The effects of PS and growth temperature on the structural and the optical properties of the ZnO thin films were investigated by using atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). A higher intensity and a narrower full width at half maximum (FWHM) of the ZnO (002) diffraction peak were observed from the ZnO thin films grown on PS, indicating improved crystal quality. For the ZnO thin films grown on Si, the optical properties were gradually enhanced as the growth temperature was increased. However, the structural and the optical properties of the ZnO thin films grown on PS exhibited the largest improvement at a growth temperature of 350 .deg. C. The structural and the optical properties of the ZnO thin films, compared with the ZnO thin films grown on Si, were improved by introducing PS, and the optimum growth temperature was decreased.

  18. Control of the threshold voltage in ZnO nanobelt field-effect transistors by using MoO x thin film

    Science.gov (United States)

    Qian, Haolei; Fang, Yanjun; Gu, Lin; Lu, Ren; Zhao, Ming; Wang, Wei; Wang, Yewu; Sha, Jian

    2016-07-01

    We report on the feasible control of the threshold voltage (V th) in ultra-thin ZnO nanobelt FETs by using substoichiometric molybdenum trioxide (MoO x , x electrodes instead of the widely used Ti/Au. ZnO nanobelt FETs using Ti/Au as the electrodes usually exhibit a negative threshold voltage, indicating n-channel depletion mode behavior, whereas ZnO FETs with MoO x /Au electrodes instead of Ti/Au show a positive shift of threshold voltage, exhibiting an n-channel type enhancement mode, which can be explained by a high Schottky barrier created at the interface of MoO x and the ZnO channel. In contrast, the decoration on the surface of ZnO channel by MoO x significantly increases the zero-bias conductivity and electron carrier concentration, and then negatively shifts the threshold voltage. We propose that MoO x thin film may play a passivation effect role, much more so than the doping effect role, due to the large amount of adsorbed species on as-grown ZnO nanobelts, especially oxygen species.

  19. All-sputtered 14% CdS/CdTe thin-film solar cell with ZnO:Al transparent conducting oxide

    International Nuclear Information System (INIS)

    Radio-frequency (rf)-sputtered Al-doped ZnO was used as the transparent front contact in the fabrication of high efficiency superstrate configuration CdS/CdTe thin-film solar cells. These cells had CdS and CdTe layers also deposited by rf sputtering at 250 deg. C with the highest processing temperature of 387 deg. C reached during a post-deposition treatment. The devices were tested at National Renewable Energy Laboratory and yielded an efficiency of 14.0%, which is excellent for a CdTe cell using ZnO and also for any sputtered CdTe solar cell. The low-temperature deposition process using sputtering for all semiconductor layers facilitates the use of ZnO and conveys significant advantages for the fabrication of more complex multiple layers needed for the fabrication of tandem polycrystalline solar cells and for cells on polymer materials

  20. Rectifying Behavior of Aligned ZnO Nano rods on Mg0.3Zn0.7O Thin Film Template

    International Nuclear Information System (INIS)

    Rectifying behavior more than 3 orders of aligned zinc oxide (ZnO) nano rods grown on Mg0.3Zn0.7O thin film template using chemical bath deposition method was observed, giving a barrier height of 0.75 eV, and the ideality factor achieved was almost 6, which was analyzed using thermionic emission theory. Field emission scanning electron microscope (FESEM) images revealed that the grown ZnO was in hexagonal shape, uniformly distributed and in vertically aligned form. The crystallinity of the sample being studied using X-ray diffraction (XRD), where the highest peak was found at (002) phase, confirming that high crystallinity of ZnO was attained. The effect of metal/semiconductor junction between metal and aligned ZnO nano rods was discussed in further details. (author)

  1. Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com; Ozcan, Sadan [SNTG Laboratory, Department of Physics Engineering, Hacettepe University, 06800 Ankara (Turkey); Rumaiz, Abdul K. [National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States); Caliskan, Deniz [Nanotechnology Research Center, Bilkent University, 06800 Ankara (Turkey); Ozbay, Ekmel [Nanotechnology Research Center, Bilkent University, 06800 Ankara (Turkey); Department of Physics, Bilkent University, 06800 Ankara (Turkey); Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara (Turkey); Woicik, J. C. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)

    2015-03-14

    We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 °C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

  2. The Theoretical Investigation and Analysis of High-Performance ZnO Double-Gate Double-Layer Insulator Thin-Film Transistors

    Institute of Scientific and Technical Information of China (English)

    GAO Hai-Xia; HU Rong; YANG Yin-Tang

    2012-01-01

    A novel structure of a ZnO thin-film transistor with a double-gate and double-layer insulator is proposed to improve device performance.Compared with the conventional ZnO thin-film transistor structure,the novel thinfilm transistor has a higher on-state current,steeper sub-threshold characteristics and a lower threshold voltage,owing to the double-gate and high-k dielectric.Based on two-dimensional simulation,the potential channel distribution and the reasons for the improvement in performance are investigated.%A novei structure of a ZnO thin-film transistor with a double-gate and double-layer insulator is proposed to improve device performance. Compared with the conventional ZnO thin-Rim transistor structure, the novel thin-Sim transistor has a higher on-state current, steeper sub-threshold characteristics and a lower threshold voltage, owing to the double-gate and high-k dielectric. Based on two-dimensional simulation, the potential channel distribution and the reasons for the improvement in performance are investigated.

  3. ZnO thin film transistors and electronic connections for adjustable x-ray mirrors: SMART-X telescope

    Science.gov (United States)

    Johnson-Wilke, R. L.; Wilke, R. H. T.; Wallace, M.; Ramirez, J. I.; Prieskorn, Z.; Nikoleyczik, J.; Cotroneo, V.; Allured, R.; Schwartz, D. A.; McMuldroch, S.; Reid, P. B.; Burrows, D. N.; Jackson, T. N.; Trolier-McKinstry, S.

    2014-09-01

    The proposed SMART-X telescope consists of a pixelated array of a piezoelectric lead zirconate titanate (PZT) thin film deposited on flexible glass substrates. These cells or pixels are used to actively control the overall shape of the mirror surface. It is anticipated that the telescope will consist of 8,000 mirror panels with 400-800 cells on each panel. This creates an enormous number (6.4 million) of traces and contacts needed to address the PZT. In order to simplify the design, a row/column addressing scheme using ZnO thin film transistors (TFTs) is proposed. In addition, connection of the gate and drain lines on the mirror segment to an external supply via a flexible cable was investigated through use of an anisotropic conductive film (ACF). This paper outlines the design of the ZnO TFTs, use of ACF for bonding, and describes a specially designed electronics box with associated software to address the desired cells.

  4. Growth of ferroelectric Li-doped ZnO thin films for metal-ferroelectric-semiconductor FET

    International Nuclear Information System (INIS)

    A metal-ferroelectric-semiconductor structure has been developed by depositing Li-doped ZnO thin films (Zn1-xLixO, x = 0.25) on p-type Si substrates by the pulsed laser ablation technique. (002) preferential oriented films were deposited at a low growth temperature of 500 0C and 100 mTorr oxygen partial pressure. The dielectric response of the films has been studied over a temperature range 250-373 K. A dielectric anomaly was observed at 360 K. The capacitance-voltage characteristics of Ag/Zn0.75Li0.25O/Si exhibited clockwise hysteresis loops with a memory window of 2 V. The films deposited at 100 mTorr pressure show a stable current density and a saturated polarization hysteresis loop with a remanent polarization of 0.09 μC cm-2 and coercive field of 25 kV cm-1. Leakage current measurements were done at elevated temperatures to provide evidence of the conduction mechanism present in these films. Ohmic behaviour was observed at low voltage, while higher voltages induced a bulk space charge. The optical properties of Zn0.75Li0.25O thin films were studied in the wavelength range 300-900 nm. The appearance of ferroelectric nature in Li-doped ZnO films adds an additional dimension to its applications

  5. Area-Selective ZnO Thin Film Deposition on Variable Microgap Electrodes and Their Impact on UV Sensing

    Directory of Open Access Journals (Sweden)

    Q. Humayun

    2013-01-01

    Full Text Available ZnO thin films were deposited on patterned gold electrodes using the sol-gel spin coating technique. Conventional photolithography process was used to obtain the variable microgaps of 30 and 43 μm in butterfly topology by using zero-gap chrome mask. The structural, morphological, and electrical properties of the deposited thin films were characterized by X-ray diffraction (XRD, scanning electron microscope (SEM, and Keithley SourceMeter, respectively. The current-voltage (I-V characterization was performed to investigate the effect of UV light on the fabricated devices. The ZnO fabricated sensors showed a photo to dark current (Iph/Id ratios of 6.26 for 30 μm and 5.28 for 43 μm gap electrodes spacing, respectively. Dynamic responses of both fabricated sensors were observed till 1V with good reproducibility. At the applied voltage of 1 V, the response time was observed to be 4.817 s and 3.704 s while the recovery time was observed to be 0.3738 s and 0.2891 s for 30 and 43 μm gaps, respectively. The signal detection at low operating voltages suggested that the fabricated sensors could be used for miniaturized devices with low power consumption.

  6. Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique

    Directory of Open Access Journals (Sweden)

    N. Poornima

    2013-01-01

    Full Text Available This work projects photoluminescence (PL as an alternative technique to estimate the order of resistivity of zinc oxide (ZnO thin films. ZnO thin films, deposited using chemical spray pyrolysis (CSP by varying the deposition parameters like solvent, spray rate, pH of precursor, and so forth, have been used for this study. Variation in the deposition conditions has tremendous impact on the luminescence properties as well as resistivity. Two emissions could be recorded for all samples—the near band edge emission (NBE at 380 nm and the deep level emission (DLE at ~500 nm which are competing in nature. It is observed that the ratio of intensities of DLE to NBE (/ can be reduced by controlling oxygen incorporation in the sample. - measurements indicate that restricting oxygen incorporation reduces resistivity considerably. Variation of / and resistivity for samples prepared under different deposition conditions is similar in nature. / was always less than resistivity by an order for all samples. Thus from PL measurements alone, the order of resistivity of the samples can be estimated.

  7. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Pitkänen, Marja; Salo, Erkki; Kenttä, Eija [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Tanskanen, Anne, E-mail: Anne.Tanskanen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Sajavaara, Timo, E-mail: timo.sajavaara@jyu.fi [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Karppinen, Maarit, E-mail: Maarit.Karppinen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland)

    2014-07-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al{sub 2}O{sub 3} of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al{sub 2}O{sub 3} thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al{sub 2}O{sub 3} • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli.

  8. muSR proof of magnetism in undoped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tietze, Thomas; Audehm, Patrick; Goering, Eberhard [Max-Planck-Institut fuer Metallforschung, Heisenbergstr. 3, D-70569 Stuttgart (Germany); Straumal, Boris [Max-Planck-Institut fuer Metallforschung, Heisenbergstr. 3, D-70569 Stuttgart (Germany); Moscow Institute of Steel and Alloys, Technological University, Leninsky Prospect 4, 119991 Moscow (Russian Federation); Straumal, Peter [Moscow Institute of Steel and Alloys, Technological University, Leninsky Prospect 4, 119991 Moscow (Russian Federation); Salman, Zaher; Luetkens, Hubertus; Prokscha, Thomas [Paul Scherrer Institut, Labor fuer Myon-Spin Spektroskopie, CH-5232 Villigen PSI (Switzerland)

    2011-07-01

    Over the last decade tremendous efforts have been taken to reveal the origin of room temperature (RT) ferromagnetism (FM) in transition metal (TM) doped ZnO. SQUID measurements mostly showed ferromagnetic behavior whereas element specific methods like x-ray magnetic circular dichroism (XMCD) could not address the FM to any of the containing elements. FM occurred even in undoped ZnO, if the specific grain boundary area exceeds a threshold value. We suggest vacancy like states located at the grain boundaries as a possible source of the origin of RT FM of undoped ZnO. In order to proof intrinsic magnetism of nanostructured pure ZnO, we performed low energy muon spin rotation (LE-muSR) experiments at the Swiss Muon Source (SmuS). SQUID hysteresis loops revealed enhanced FM according to higher specific grain boundary area, in perfect agreement with our muSR measurements. The maximum muSR related magnetic volume fraction for nano grained samples was about 35%, while the pure ZnO single crystal sample was solely diamagnetic. Therefore, we present intrinsic evidence for a new type of RT-FM.

  9. Nanoporous characteristics of sol-gel-derived ZnO thin film

    Institute of Scientific and Technical Information of China (English)

    Anees A. Ansari; M. A. M. Khan; M. Alhoshan; S. A. Alrokayan; M. S. Alsalhi

    2012-01-01

    Sol-gel-derived nanoporous ZnO film has been successfully deposited on glass substrate at 200 ℃ and subsequently annealed at different temperatures of 300,400 and 600 ℃.Atomic force micrographs demonstrated that the film was crack-free,and that granular nanoparticles were homogenously distributed on the film surface.The average grain size of the nanoparticles and RMS roughness of the scanned surface area was 10 nm and 13.6nm,respectively,which is due to the high porosity of the film.Photoluminescence (PL) spectra of the nanoporous ZnO film at room temperature show a diffused band,which might be due to an increased amount of oxygen vacancies on the lattice surface.The observed results of the nanoporous ZnO film indicates a promising applicationin the development of electrochemical biosensors due to the porosity of film enhancing the higher loading of biomacromolecules (enzyme and proteins).

  10. Nanostructured Zn and ZnO nanowire thin films for mechanical and self-cleaning applications

    Energy Technology Data Exchange (ETDEWEB)

    Shaik, Ummar Pasha [Advanced Centre of Research in High Energy Materials, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); Purkayastha, Debarun Dhar, E-mail: ddebarun@yahoo.com [Department of Physics, National Institute of Technology Nagaland, Chumukedima, Dimapur 797103 (India); Krishna, M. Ghanashyam [Advanced Centre of Research in High Energy Materials, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); School of Physics, University of Hyderabad, Prof. C R Rao Road, Gachibowli, Hyderabad 500046 (India); Madhurima, V. [Department of Physics, Central University of Tamil Nadu, Thiruvarur 610004 (India)

    2015-03-01

    Highlights: • Zn metal films were deposited by thermal evaporation, on various substrates. • Upon annealing Zn there is transformation of the Zn nanosheets into ZnO nanowires. • ZnO nanowires are superhydrophobic and exhibit wetting transition on UV exposure. • ZnO will be useful in self-cleaning, mechanical and oxidation resistance surfaces. - Abstract: Nanostructured Zn metal films were deposited by thermal evaporation, on borosilicate glass, Quartz, sapphire, lanthanum aluminate and yttria stabilized zirconia substrates. The as-deposited films are nanocrystalline and show a morphology that consists of triangular nanosheets. The films are hydrophobic with contact angles between 102° and 120° with hardness and Young's modulus between 0.15–0.8 GPa and 18–300 GPa, respectively. Thermal annealing of the films at 500 °C results only in partial oxidation of Zn to ZnO, which indicates good oxidation resistance. Annealing also causes transformation of the Zn nanosheets into ZnO nanowires that are polycrystalline in nature. The ZnO nanowires are superhydrophobic with contact angles between 159° and 162°, contact angle hysteresis between 5° and 10° and exhibit a reversible superhydrophobic–hydrophilic transition under UV irradiation. The nanowires are much softer than the as-deposited Zn metal films, with hardness between 0.02 and 0.4 GPa and Young's modulus between 3 and 35 GPa. The current study thus demonstrates a simple process for fabrication of nanostructured Zn metal films followed by a one-step transformation to nanowires with properties that will be very attractive for mechanical and self-cleaning applications.

  11. Nanostructured Zn and ZnO nanowire thin films for mechanical and self-cleaning applications

    International Nuclear Information System (INIS)

    Highlights: • Zn metal films were deposited by thermal evaporation, on various substrates. • Upon annealing Zn there is transformation of the Zn nanosheets into ZnO nanowires. • ZnO nanowires are superhydrophobic and exhibit wetting transition on UV exposure. • ZnO will be useful in self-cleaning, mechanical and oxidation resistance surfaces. - Abstract: Nanostructured Zn metal films were deposited by thermal evaporation, on borosilicate glass, Quartz, sapphire, lanthanum aluminate and yttria stabilized zirconia substrates. The as-deposited films are nanocrystalline and show a morphology that consists of triangular nanosheets. The films are hydrophobic with contact angles between 102° and 120° with hardness and Young's modulus between 0.15–0.8 GPa and 18–300 GPa, respectively. Thermal annealing of the films at 500 °C results only in partial oxidation of Zn to ZnO, which indicates good oxidation resistance. Annealing also causes transformation of the Zn nanosheets into ZnO nanowires that are polycrystalline in nature. The ZnO nanowires are superhydrophobic with contact angles between 159° and 162°, contact angle hysteresis between 5° and 10° and exhibit a reversible superhydrophobic–hydrophilic transition under UV irradiation. The nanowires are much softer than the as-deposited Zn metal films, with hardness between 0.02 and 0.4 GPa and Young's modulus between 3 and 35 GPa. The current study thus demonstrates a simple process for fabrication of nanostructured Zn metal films followed by a one-step transformation to nanowires with properties that will be very attractive for mechanical and self-cleaning applications

  12. High Temperature Thermoelectric Properties of ZnO Based Materials

    DEFF Research Database (Denmark)

    Han, Li

    temperatures were investigated by the simulation of the self-Joule-heating effect of the individual particles. The effects of nanostructuring in Al-doped ZnO were systematically investigated using samples with different microstructural morphologies. The samples with preferentially oriented grains exhibited...

  13. Structural Properties of Zinc Oxide Nanorods Grown on Al-Doped Zinc Oxide Seed Layer and Their Applications in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Kyung Ho Kim

    2014-03-01

    Full Text Available We fabricated zinc oxide (ZnO nanorods (NRs with Al-doped ZnO (AZO seed layers and dye-sensitized solar cells (DSSCs employed the ZnO NRs between a TiO2 photoelectrode and a fluorine-doped SnO2 (FTO electrode. The growth rate of the NRs was strongly dependent on the seed layer conditions, i.e., thickness, Al dopant and annealing temperature. Attaining a large particle size with a high crystallinity of the seed layer was vital to the well-aligned growth of the NRs. However, the growth was less related to the substrate material (glass and FTO coated glass. With optimized ZnO NRs, the DSSCs exhibited remarkably enhanced photovoltaic performance, because of the increase of dye absorption and fast carrier transfer, which, in turn, led to improved efficiency. The cell with the ZnO NRs grown on an AZO seed layer annealed at 350 °C showed a short-circuit current density (JSC of 12.56 mA/cm2, an open-circuit voltage (VOC of 0.70 V, a fill factor (FF of 0.59 and a power conversion efficiency (PCE, η of 5.20% under air mass 1.5 global (AM 1.5G illumination of 100 mW/cm2.

  14. Defect Chemistry Study of Nitrogen Doped ZnO Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Miami University: Dr. Lei L. Kerr (PI, PD) Wright State University: Dr. David C. Look (PI) and Dr. Zhaoqiang Fang (Co-PI)

    2009-11-29

    Our team has investigated the defect chemistry of ZnO:N and developed a thermal evaporation (vapor-phase) method to synthesis p-type ZnO:N. Enhanced p-type conductivity of nitrogen doped ZnO via nano/micro structured rods and Zn-rich Co-doping process were studied. Also, an extended X-Ray absorption fine structure study of p-type nitrogen doped ZnO was conducted. Also reported are Hall-effect, photoluminescence, and DLTS studies.

  15. Microstructural characterization, optical and photocatalytic properties of bilayered CuO and ZnO based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Pizá-Ruiz, P.; Solís-Canto, O.; Ornelas-Gutiérrez, C.; Pérez-García, S.; Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx

    2014-12-05

    Highlights: • High quality bilayered Zn–Cu oxide thin films were deposited by aerosol assisted CVD. • Detailed microstructural characterization was performed by XRD and electron microscopy. • Absorbance of bilayered films shows a shift of absorption edge toward visible region. • Optical band gap or nearly 3.2 and 2 eV was determined for ZnO and Cu oxide. • High photocatalytic activity around 90% was obtained for bilayered samples. - Abstract: In this work, it is presented the synthesis, microstructural characterization and photocatalytic properties of bilayered CuO–ZnO/ZnO thin films onto borosilicate glass and fused silica substrates. The films were deposited by aerosol assisted chemical vapor deposition, using an experimental setup reported elsewhere. Deposition conditions were optimized to get high quality films; i.e. they were structurally uniform, highly transparent, non-light scattering, homogeneous, and well adhered to the substrate. Different Cu/Zn atomic ratios were tried for the upper layer. The microstructure of the films was characterized by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy. GIXRD results indicate the presence of ZnO Wurzite and Cu oxide phases. Results of SEM and HRTEM analysis of the cross sectional microstructure showed that the films were composed of compact and dense layers with no visible evidence of an interfacial boundary or porosity. Optical absorbance of the bilayered films showed a clear shift of the absorption toward the visible range. Optical band gap was determined roughly at 3.2 and 2 eV for ZnO and Cu oxide, respectively. Photocatalytic activity of the samples, for the degradation of a 10{sup −5} mol dm{sup −3} solution of methylene blue (MB), was determined after 120 and 240 min of irradiation with an UV-A source. Around 90% of MB degradation was reached by bilayered films with

  16. Ultrathin Al-doped transparent conducting zinc oxide films fabricated by pulsed laser deposition

    International Nuclear Information System (INIS)

    Al-doped transparent conducting zinc oxide (AZO) films, approximately 20-110 nm-thick, were deposited on glass substrates at substrate temperatures between 200 and 300 deg. C by pulsed laser deposition (PLD) using an ArF excimer laser (λ = 193 nm). When fabricated at a substrate temperature of 260 deg. C , a 40-nm-thick AZO film showed a low resistivity of 2.61 x 10-4 Ω.cm, carrier concentration of 8.64 x 1020 cm-3, and Hall mobility of 27.7 cm2/V.s. Furthermore, for an ultrathin 20-nm-thick film, a resistivity of 3.91 x 10-4 Ω.cm, carrier concentration of 7.14 x 1020 cm-3, and Hall mobility of 22.4 cm2/V.s were obtained. X-ray diffraction (XRD) spectra, obtained by the θ-2θ method, of the AZO films grown at a substrate temperature of 260 deg. C showed that the diffraction peak of the ZnO (0002) plane increased as the film thickness increased from 20 to 110 nm. The full-width-at-half-maximum (FWHM) values were 0.5500 deg., 0.3845 deg., and 0.2979 deg. for film thicknesses of 20, 40, and 110 nm, respectively. For these films, the values of the average transmittance in visible light wavelengths (400-700 nm) were 95.1%, 94.2%, and 96.6%, respectively. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) observations showed that even the 20-nm-thick films did not show island structures. In addition, exfoliated areas or vacant and void spaces were not observed for any of the films

  17. K-doping effects on the characteristics of ZnO thin films synthesized by using a spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Iksoo; Kim, Younggyu; Leem, Jaeyoung; Park, Hyunggil; Kim, Soaram [Inje University, Gimhae (Korea, Republic of); Kim, Jong Su [Yeungnam University, Gyeongsan (Korea, Republic of); Kim, Jinsoo [Chonbuk National University, Jeonju (Korea, Republic of)

    2014-05-15

    Zinc-oxide (ZnO) thin films doped with various amounts of potassium were synthesized on quartz substrates by using the sol-gel method. The effects of K-doping on the structural and optical properties of the resultant ZnO thin films were investigated using X-ray diffraction (XRD), Ultraviolet visible (UV) spectroscopy, and photoluminescence (PL) spectroscopy. From the XRD results, the full width at half maximum (FWHM) for ZnO (002) and the grain size was measured. In the transmittance spectra, all the K-doped ZnO thin films were found to exhibit a high transmittance in the visible region. The optical band gap of the thin films was also determined from the transmittance results. The PL spectra showed near-band-edge (NBE) emission peaks in the UV region and deep-level emission (DLE) peaks of around 640 nm. The PL peak intensities of both the NBE emission and the DLE were found to change with varying concentrations of K.

  18. Smart chemical sensors using ZnO semiconducting thin films for freshness detection of foods and beverages

    Science.gov (United States)

    Nanto, Hidehito; Kobayashi, Toshiki; Dougami, Naganori; Habara, Masaaki; Yamamoto, Hajime; Kusano, Eiji; Kinbara, Akira; Douguchi, Yoshiteru

    1998-07-01

    The sensitivity of the chemical sensor, based on the resistance change of Al2O3-doped and SnO2-doped ZnO (ZnO:Al and ZnO:SnO2) thin film, is studied for exposure to various gases. It is found that the ZnO:Al and ZnO:Sn thin film chemical sensor has a high sensitivity and excellent selectivity for amine (TMA and DMA) gas and ethanol gas, respectively. The ZnO:Al (5.0 wt%) thin film chemical sensor which exhibit a high sensitivity for exposure to odors from rotten sea foods, such as salmon, sea bream, oyster, squid and sardine, responds to the freshness change of these sea foods. The ZnO:SnO2 (78 wt%) thin film chemical sensor which exhibit a high sensitivity for exposure to aroma from alcohols, such as wine, Japanese sake, and whisky, responds to the freshness change of these alcohols.

  19. Structural, Optical Constants and Photoluminescence of ZnO Thin Films Grown by Sol-Gel Spin Coating

    Directory of Open Access Journals (Sweden)

    Abdel-Sattar Gadallah

    2013-01-01

    Full Text Available We report manufacturing and characterization of low cost ZnO thin films grown on glass substrates by sol-gel spin coating method. For structural properties, X-ray diffraction measurements have been utilized for evaluating the dominant orientation of the thin films. For optical properties, reflectance and transmittance spectrophotometric measurements have been done in the spectral range from 350 nm to 2000 nm. The transmittance of the prepared thin films is 92.4% and 88.4%. Determination of the optical constants such as refractive index, absorption coefficient, and dielectric constant in this wavelength range has been evaluated. Further, normal dispersion of the refractive index has been analyzed in terms of single oscillator model of free carrier absorption to estimate the dispersion and oscillation energy. The lattice dielectric constant and the ratio of free carrier concentration to free carrier effective mass have been determined. Moreover, photoluminescence measurements of the thin films in the spectral range from 350 nm to 900 nm have been presented. Electrical measurements for resistivity evaluation of the films have been done. An analysis in terms of order-disorder of the material has been presented to provide more consistency in the results.

  20. Ultrafast Surface-Plasmon Enhancement of Exciton and Defect Luminescence in ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Haglund R. F.

    2013-03-01

    Full Text Available Femtosecond pump-probe and photoluminescence measurements in transmission and reflection show that ultraviolet band-edge and visible defect luminescence in ZnO films can be selectively enhanced by coupling to Ag surface-plasmon polaritons or localized surface plasmon resonances.

  1. Al-doped MgB2 materials studied using electron paramagnetic resonance and Raman spectroscopy

    Science.gov (United States)

    Bateni, Ali; Erdem, Emre; Repp, Sergej; Weber, Stefan; Somer, Mehmet

    2016-05-01

    Undoped and aluminum (Al) doped magnesium diboride (MgB2) samples were synthesized using a high-temperature solid-state synthesis method. The microscopic defect structures of Al-doped MgB2 samples were systematically investigated using X-ray powder diffraction, Raman spectroscopy, and electron paramagnetic resonance. It was found that Mg-vacancies are responsible for defect-induced peculiarities in MgB2. Above a certain level of Al doping, enhanced conductive properties of MgB2 disappear due to filling of vacancies or trapping of Al in Mg-related vacancy sites.

  2. Effect of Al Doping on Performance of CuGaO2 p-Type Dye-Sensitized Solar Cells

    Science.gov (United States)

    Ursu, D.; Vaszilcsin, N.; Bănica, R.; Miclau, M.

    2016-01-01

    The p-type semiconductor Cu(I)-based delafossite transparent conducting oxides are good candidates to be used as hole collectors in dye-sensitized solar cells. The Al-doped CuGaO2 has been synthesized by hydrothermal method and its properties have been investigated as cathode elements in ruthenium dye N719-sensitized solar cells. The photocurrent density ( J sc) and the open-circuit voltage ( V oc) for 5% Al-doped CuGaO2 microparticles using N719 dye were approximately two times higher than undoped CuGaO2 microparticles. The integration of aluminum dopants in the delafossite structure improves the photovoltaic performance of CuGaO2 thin films, due to the excellent optical transparency of CuGaO2 in the visible range as well as the improved electrical conductivity caused by the apparition of the intrinsic acceptor defect associate (Al Cu •• 2O i ″ )″ with tetrahedrally coordinated Al on the Cu-site.

  3. Characterization of spray-deposited ZnO thin films for dye-sensitized solar cell application

    Science.gov (United States)

    Amala Rani, A.; Ernest, Suhashini

    2016-07-01

    ZnO films have been prepared on glass plates with concentrations of 0.025, 0.05 and 0.1 M each consisting of 50 ml of solution using the spray pyrolysis technique. A dye-sensitized solar cell (DSSC) was constructed by means of the obtained film for 0.1 M which was also coated above the ITO substrate. N-719, iodide and platinum-coated ITO glass plates were used as the dye, electrolyte and counter electrode, respectively. XRD confirms that the structure of the film was polycrystalline having wurtzite structure. The surface with pores was found from the FESEM studies. The DSSC shows an optical transmittance of approximately 70 % in the visible region. The photoluminescence study reveals the electronic structure of the material. The efficiency of the DSSC measured for a 0.1 M ZnO thin film by sensitizing every 2 h was η = 0.51, 0.80, 0.54, 1.12, 2.11, 2.71, 3.15 and 3.20 %, respectively.

  4. Effect of O2/Ar Gas Flow Ratios on Properties of Cathodic Vacuum Arc Deposited ZnO Thin Films on Polyethylene Terephthalate Substrate

    Directory of Open Access Journals (Sweden)

    Chien-Wei Huang

    2016-01-01

    Full Text Available Cathodic vacuum arc deposition (CVAD can obtain a good quality thin film with a low growth temperature and a high deposition rate, thus matching the requirement of film deposition on flexible electronics. This paper reported the room-temperature deposition of zinc oxide (ZnO thin films deposited by CVAD on polyethylene terephthalate (PET substrate. Microstructure, optical, and electrical measurements of the deposited ZnO thin films were investigated with various O2/Ar gas flow ratios from 6 : 1 to 10 : 1. The films showed hexagonal wurtzite crystal structure. With increasing the O2/Ar gas flow ratios, the c-axis (002 oriented intensity decreased. The crystal sizes were around 16.03 nm to 23.42 nm. The average transmittance values in the visible range of all deposited ZnO films were higher than 83% and the calculated band gaps from the absorption data were found to be around 3.1 to 3.2 eV. The resistivity had a minimum value in the 3.65 × 10−3 Ω·cm under the O2/Ar gas flow ratio of 8 : 1. The luminescence mechanisms of the deposited film were also investigated to understand the defect types of room-temperature grown ZnO films.

  5. Photocatalytic Activity and Stability of Porous Polycrystalline ZnO Thin-Films Grown via a Two-Step Thermal Oxidation Process

    Directory of Open Access Journals (Sweden)

    James C. Moore

    2014-08-01

    Full Text Available The photocatalytic activity and stability of thin, polycrystalline ZnO films was studied. The oxidative degradation of organic compounds at the ZnO surface results from the ultraviolet (UV photo-induced creation of highly oxidizing holes and reducing electrons, which combine with surface water to form hydroxyl radicals and reactive oxygen species. Therefore, the efficiency of the electron-hole pair formation is of critical importance for self-cleaning and antimicrobial applications with these metal-oxide catalyst systems. In this study, ZnO thin films were fabricated on sapphire substrates via direct current sputter deposition of Zn-metal films followed by thermal oxidation at several annealing temperatures (300–1200 °C. Due to the ease with which they can be recovered, stabilized films are preferable to nanoparticles or colloidal suspensions for some applications. Characterization of the resulting ZnO thin films through atomic force microscopy and photoluminescence indicated that decreasing annealing temperature leads to smaller crystal grain size and increased UV excitonic emission. The photocatalytic activities were characterized by UV-visible absorption measurements of Rhodamine B dye concentrations. The films oxidized at lower annealing temperatures exhibited higher photocatalytic activity, which is attributed to the increased optical quality. Photocatalytic activity was also found to depend on film thickness, with lower activity observed for thinner films. Decreasing activity with use was found to be the result of decreasing film thickness due to surface etching.

  6. Influence of Rare Earth Ho3+ Doping on the Structural, Microstructure and Magnetic Properties of ZnO Bulk and Thin Film Systems

    Institute of Scientific and Technical Information of China (English)

    Ghulam Murtaza Rai; Muhammad Azhar Iqbal; Yongbing Xu; lain Gordon Will; Wen Zhang

    2011-01-01

    We have investigated the doping behavior of rare earth element holmium (Ho3+) in ZnO semiconductor. The structural, microstructure, and magnetic properties of Zn1_xHoxO (x=0.0, 0.04, and 0.05) thin films deposited on Si(100) substrate by thermal evaporation technique were studied. The ceramic targets were prepared by conventional solid state ceramic technique. The pallets used as target were final sintered at 900 ℃ in the presence of N2 atmosphere. The experimental results of X-ray diffraction (XRD) spectra, surface morphology, and magnetic properties show that the Ho3+ doped ZnO thin films has a strong influence on the materials properties. The higher angle shift in peak position and most preferred (101) orientation were observed in XRD pattern. These spectra confirmed the substitution of Ho3+ in ZnO lattice. The surface morphology and stoichiometry for both bulk and thin films were analyzed by scanning electron microscopy and energy dispersive spectroscopy. It was observed that grain size decreases with the increase of Ho3+. Room temperature ferromagnetism was observed for Zn0.95Ho0.05O films. The ferromagnetism might be attributed to the substitution of Ho ions for Zn2+ in ZnO lattices.

  7. Low-temperature growth and physical investigations of undoped and (In, Co) doped ZnO thin films sprayed on PEI flexible substrate

    Science.gov (United States)

    Ben Ameur, S.; Barhoumi, A.; Mimouni, R.; Amlouk, M.; Guermazi, H.

    2015-08-01

    ZnO thin films were deposited on polymer substrate Polyethyerimide (PEI) at 250 °C by spray pyrolysis technique. The effects of different doping elements (Co and In) on physical properties of ZnO thin films were investigated. Thin film characterizations were carried out using X-ray diffraction technique, UV-Vis-NIR spectroscopy, Photoluminescence (PL) spectroscopy and the contact angle measurement method. XRD measurement showed a successful growth of crystalline films on polymer substrate at low temperature by the spray pyrolysis process. XRD patterns revealed that all films consist of single ZnO phase and were well crystallized with preferential orientation towards (1 0 1) direction. Doping by cobalt has effective role in the enhancement of the crystalline quality, increases in the band gap according to Burstein Moss effect. Doping with indium leads rather to the decrease of both crystallinity and optical band gap energy value. Photoluminescence of the films showed UV emission (NBE) and visible emission related to defects. The contact angles were measured to study the effect of various doping elements on the hydrophobicity of the film depending on surface roughness. Results showed strong dependence on the doping element. In fact, doping with cobalt element increases the roughness of ZnO films and reinforces the surface from hydrophilic to hydrophobic (θ > 90°).

  8. Identification of Acceptor States in Li-N Dual-Doped p-Type ZnO Thin Films

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yin-Zhu; LU Jian-Guo; YE Zhi-Zhen; HE Hai-Ping; CHEN Lan-Lan; ZHAO Bing-Hui

    2009-01-01

    @@ Li-N dual-doped p-type ZnO (ZnO:(Li,N)) thin films are prepared by pulsed laser deposition. The optical properties are studied using temperature-dependent photoluminescence. The Lizn-No complex aceeptor with an energy level of 138 meV is identified from the free-to-neutral-acceptor (e, Ao) emission. The Haynes factor is about 0.087 for the LiZn-NO complex acceptor, with the acceptor bound-exciton binding energy of 12meV. Another deeper acceptor state located at 248meV, also identified from the (e, Ao) emission, is attributed to zinc vacancy acceptor. The two acceptor states might both contribute to the observed p-type conductivity in ZnO:(Li,N).

  9. Influence of baking method and baking temperature on the optical properties of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ng, Zi-Neng; Chan, Kah-Yoong [Centre for Advanced Devices and Systems, Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor (Malaysia)

    2015-04-24

    In this work, sol-gel spin coating technique was utilised to coat ZnO thin films on glass substrates. During the intermediate 3 minutes baking process, either hotplate or convection oven was employed to bake the samples. The temperature for the baking process was varied from 150°C to 300°C for both instruments. Avantes Optical Spectrophotometer was used to characterise the optical property. The optical transmittances of hotplate-baked and oven-baked samples showed different trends with increasing baking temperatures, ranging from below 50% transmittance to over 90% transmittance in the visible range of wavelength. The difference in baking mechanisms using hotplate and convection oven will be discussed in this paper.

  10. Slope selection-driven Ostwald ripening in ZnO thin film growth

    OpenAIRE

    González-González, A; Polop, C.; Vasco, E.

    2012-01-01

    The morphology evolution of polycrystalline ZnO films grown by pulsed laser deposition was investigated by atomic force microscopy and compared with morphologies simulated in 2 + 1 dimensions from a mesoscopic continuum model of selection of surface slopes. The distinctive feature of such an evolution is that the competition between grains gives rise to a singular grain coarsening mechanism, which although it matches the fingerprints of the Ostwald ripening, it remains operative under atypica...

  11. Electrodeposition of Mg doped ZnO thin film for the window layer of CIGS solar cell

    Science.gov (United States)

    Wang, Mang; Yi, Jie; Yang, Sui; Cao, Zhou; Huang, Xiaopan; Li, Yuanhong; Li, Hongxing; Zhong, Jianxin

    2016-09-01

    Mg doped ZnO (ZMO) film with the tunable bandgap can adjust the conduction band offset of the window/chalcopyrite absorber heterointerface to positive to reduce the interface recombination and resulting in an increasement of chalcopyrite based solar cell efficiency. A systematic study of the effect of the electrodeposition potential on morphology, crystalline structure, crystallographic orientation and optical properties of ZMO films was investigated. It is interestingly found that the prepared doped samples undergo a significant morphological change induced by the deposition potential. With negative shift of deposition potential, an obvious morphology evolution from nanorod structrue to particle covered films was observed. A possible growth mechanism for explaining the morphological change is proposed and briefly discussed. The combined optical techniques including absorption, transmission and photoluminescence were used to study the obtained ZMO films deposited at different potential. The sample deposited at -0.9 V with the hexagonal nanorods morphology shows the highest optical transparency of 92%. The photoluminescence spectra reveal that the crystallization of the hexagonal nanorod ZMO thin film deoposited at -0.9 V is much better than the particles covered ZMO thin film. Combining the structural and optical properties analysis, the obtained normal hexagonal nanorod ZMO thin film could potentially be useful in nanostructured chalcopyrite solar cells to improve the device performance.

  12. Structural, optical, and electrical properties of Mo-doped ZnO thin films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Highlights: • Mo-doped ZnO thin films were prepared successfully by magnetron sputtering. • The lowest electrical resistivity of the MZO thin film is about 9.2 × 10−4 Ω cm. • The mechanism of the changes of carrier mobility was studied. • The mechanism of the changes of band-gap was discussed and explained possibly. - Abstract: Molybdenum doped zinc oxide thin films have been prepared by RF magnetron sputtering. The influence of the film thickness (120–500 nm) on the structural, electrical, and optical properties of the films is investigated respectively. X-ray diffraction (XRD) studies reveal that with an increase in the film thickness, the crystallinity of the film improves. The obtained film with thickness of 500 nm exhibits the best electrical properties with the lowest resistivity of around 9.6 × 10−4 Ω cm. The mobility varied from 7.8 to 14.7 cm2 V−1 s−1 without reducing the achieved high carrier concentration of ∼4.5 × 1020 cm−3. Optical band gaps extracted from transmission spectra shows irregular changes due to the Burstein–Moss shift modulated by many-body effects

  13. Nanostructured Zn and ZnO nanowire thin films for mechanical and self-cleaning applications

    Science.gov (United States)

    Shaik, Ummar Pasha; Purkayastha, Debarun Dhar; Krishna, M. Ghanashyam; Madhurima, V.

    2015-03-01

    Nanostructured Zn metal films were deposited by thermal evaporation, on borosilicate glass, Quartz, sapphire, lanthanum aluminate and yttria stabilized zirconia substrates. The as-deposited films are nanocrystalline and show a morphology that consists of triangular nanosheets. The films are hydrophobic with contact angles between 102° and 120° with hardness and Young's modulus between 0.15-0.8 GPa and 18-300 GPa, respectively. Thermal annealing of the films at 500 °C results only in partial oxidation of Zn to ZnO, which indicates good oxidation resistance. Annealing also causes transformation of the Zn nanosheets into ZnO nanowires that are polycrystalline in nature. The ZnO nanowires are superhydrophobic with contact angles between 159° and 162°, contact angle hysteresis between 5° and 10° and exhibit a reversible superhydrophobic-hydrophilic transition under UV irradiation. The nanowires are much softer than the as-deposited Zn metal films, with hardness between 0.02 and 0.4 GPa and Young's modulus between 3 and 35 GPa. The current study thus demonstrates a simple process for fabrication of nanostructured Zn metal films followed by a one-step transformation to nanowires with properties that will be very attractive for mechanical and self-cleaning applications.

  14. Study and improvement of aluminium doped ZnO thin films: Limits and advantages

    International Nuclear Information System (INIS)

    ZnO:Al films were deposited at 70 °C at a fixed −1.1 V potential onto ITO substrates from a 0.01 M Zn(NO3)2 + x Al(NO3)3·9H2O electrochemical bath, with Al3+ concentrations between 0 and 2 mM. Electrodeposition conditions were optimized to remove bubbles, increase grain size homogeneity and ensure adherence. Films were characterized by field emission scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, UV–vis transmittance, electrochemical impedance spectroscopy and photocurrent spectroscopy. Films were crystalline with the wurtzite structure and present a morphology made of hexagonal nano-pillars. It was found that Al incorporation increases gradually up to ∼11 at% for samples prepared within the concentration range 0.0–0.3 mM Al3+ in the bath. For higher Al3+ contents (>0.4 mM) an amorphous Al2O3-like compound develops on top of the films. In the grown films with Al contents up to 11 at%, changes in the optical band gap from 2.88 eV to 3.45 eV and in the carrier densities from 1019 to 1020 cm−3 were observed. The blue shift in the band gap energy was attributed to the Burstein-Moss effect. Changes in the photocurrent response and the electronic disorder were also discussed in the light of Al doping. Optical transmittances up to 60% at 550 nm were obtained, thus making these films suitable as transparent and conductive oxide films

  15. Growth of ferroelectric Li-doped ZnO thin films for metal-ferroelectric-semiconductor FET

    Energy Technology Data Exchange (ETDEWEB)

    Dhananjay [Department of Instrumentation, Indian Institute of Science, Bangalore 560 012 (India); Nagaraju, J [Department of Instrumentation, Indian Institute of Science, Bangalore 560 012 (India); Choudhury, Palash Roy [Materials Research Center, Indian Institute of Science, Bangalore 560 012 (India); Krupanidhi, S B [Materials Research Center, Indian Institute of Science, Bangalore 560 012 (India)

    2006-07-07

    A metal-ferroelectric-semiconductor structure has been developed by depositing Li-doped ZnO thin films (Zn{sub 1-x}Li{sub x}O, x = 0.25) on p-type Si substrates by the pulsed laser ablation technique. (002) preferential oriented films were deposited at a low growth temperature of 500 {sup 0}C and 100 mTorr oxygen partial pressure. The dielectric response of the films has been studied over a temperature range 250-373 K. A dielectric anomaly was observed at 360 K. The capacitance-voltage characteristics of Ag/Zn{sub 0.75}Li{sub 0.25}O/Si exhibited clockwise hysteresis loops with a memory window of 2 V. The films deposited at 100 mTorr pressure show a stable current density and a saturated polarization hysteresis loop with a remanent polarization of 0.09 {mu}C cm{sup -2} and coercive field of 25 kV cm{sup -1}. Leakage current measurements were done at elevated temperatures to provide evidence of the conduction mechanism present in these films. Ohmic behaviour was observed at low voltage, while higher voltages induced a bulk space charge. The optical properties of Zn{sub 0.75}Li{sub 0.25}O thin films were studied in the wavelength range 300-900 nm. The appearance of ferroelectric nature in Li-doped ZnO films adds an additional dimension to its applications.

  16. Effects of morphology on the thermoelectric properties of Al-doped ZnO

    DEFF Research Database (Denmark)

    Han, Li; Van Nong, Ngo; Zhang, Wei;

    2014-01-01

    consolidated from nanoparticles exhibited fine grains and highly distributed nanoprecipitates, resulting in a ZT value of 0.3 at 1223 K due to the lower thermal conductivity resulting from nanostructuring. Using the simple parabolic band model and Debye–Callaway thermal transport model, the anisotropic...

  17. Transparent Pixel Circuit with Threshold Voltage Compensation Using ZnO Thin-Film Transistors for Active-Matrix Organic Light Emitting Diode Displays

    Science.gov (United States)

    Yang, Ik-Seok; Kwon, Oh-Kyong

    2009-03-01

    A transparent pixel circuit with a threshold voltage compensating scheme using ZnO thin-film transistors (TFTs) for active-matrix organic light emitting diode (AMOLED) displays is proposed. This circuit consists of five n-type ZnO TFTs and two capacitors and can compensate for the threshold voltage variation of ZnO TFTs in real time. From simulation results, the maximum deviation of the emission current of the pixel circuit with a threshold voltage variation of ±1 V is determined to be less than 10 nA. From measurement results, it is verified that the maximum deviation of measured emission currents with measurement position in a glass substrate is less than 15 nA in a higher current range, and the deviation of emission current with time is less than 3%.

  18. Fabrication of undoped ZnO thin film via photosensitive sol–gel method and its applications for an electron transport layer of organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Luong, Chi Hieu [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Kim, Sarah [Central Research Division, LG Chem., Yuseong-gu, Daejeon 305-738 (Korea, Republic of); Surabhi, Srivathsava; Vo, Thanh Son; Lee, Kyung-Min; Yoon, Soon-Gil [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Jeong, Jun-Ho [Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Choi, Jun-Hyuk, E-mail: junhyuk@kimm.re.kr [Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Jeong, Jong-Ryul, E-mail: jrjeong@cnu.ac.kr [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of)

    2015-10-01

    Highlights: • Investigated the effect of the interfacial ZnO for ETL synthesized by photochemical reaction using photosensitive 2-nitrobenzaldehyde on the inverted P3HT:PCBM OSC. • The abrupt increase of grain size and surface roughness was observed as increasing the annealing temperature above 350 °C. • The sheet resistance abruptly decreased with increasing the annealing temperature above 350 °C. • Increase of surface roughness caused by the high annealing temperature could be detrimental to the OSCs characteristics due to a high contact resistance and a large leakage current. - Abstract: We have investigated ZnO thin films prepared via photochemical reaction as the electron transport layer (ETL) of inverted organic solar cells (OSCs). Morphological and electrical properties of the ZnO thin films prepared by the photosensitive ZnO sol were studied according to the annealing temperature and their effects on the performance of the inverted poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester (P3HT:PCBM) OSCs was characterized. It was found that the optimal annealing temperature of the ZnO thin films was 330 °C, and that devices with the ZnO ETL annealed at this temperature exhibited the largest short-circuit current density (J{sub sc}) of 9.39 mA/cm{sup 2}, as well as the highest power conversion efficiency (PCE) of 2.31%, which can be attributed to enhanced electron transport and interfacial properties. Devices containing ZnO films formed at optimal annealing condition exhibited an open circuit voltage (V{sub oc}) of 0.60 V and a fill factor (FF) of 41.0%. However, further increase of the annealing temperature led to degradation of the device performance, despite further improvements in electrical properties. We have found that marked increase in the surface roughness of the ZnO films occurred at temperatures above 350 °C which could be detrimental to the OSCs characteristics due to a high contact resistance and a large leakage current.

  19. Effects of pH of the precursor sol on structural and optical properties of Cu-doped ZnO thin films

    International Nuclear Information System (INIS)

    Highlights: • Cu-doped ZnO films have been prepared by with the pH of the precursor sol from 6 to 10. • The crystallinity of the Cu-doped ZnO films improves with increasing pH values below 8.5. • Adjusting the pH of the sol can well tune the bandgap of Cu-doped ZnO films from 3.19 to 2.42 eV. - Abstract: Cu-doped ZnO thin films deposited on glass substrates by a sol–gel method with sol pH ranging from 6 to 10 were investigated. Characterization of the morphology and microstructures by scanning electron microscopy (SEM) and X-ray diffraction (XRD) revealed that the grain size decreases slightly with an increase of the pH value of the precursor sol. ZnO vary in their orientation along the preferred (0 0 2) plane, while the best c-axis orientation occurs in the thin film fabricated from the precursor sol with pH = 8.5. X-ray photoelectron spectroscope (XPS) and XRD results indicate that Cu ions are indeed substituted at the Zn2+ site into the ZnO lattice. Strong ultraviolet emission, blue double emission and weak green emission peaks are observed in the photoluminescence spectra of all samples at room temperature. Further studies show that adjusting the pH of the precursor sol can well tune the bandgap from 3.19 to 2.42 eV

  20. Role of substrate temperature on the properties of Na-doped ZnO thin film nanorods and performance of ammonia gas sensors using nebulizer spray pyrolysis technique

    International Nuclear Information System (INIS)

    Highlights: • Na-doped ZnO films deposited on glass by nebulizer spray pyrolysis (NSP) method. • NSP method for large area coatings and good results as compared with other methods. • HR-SEM studies reveal the formation of Na-doped ZnO films consisting of nano-rods. • Na-doped ZnO films ensure their stability and suitability for gas sensors. -- Abstract: Sodium doped zinc oxide (Na:ZnO) thin films were deposited on glass substrates at substrate temperatures 300, 400 and 500 °C by a novel nebulizer spray method. X-ray diffraction shows that all the films are polycrystalline in nature having hexagonal structure with high preferential orientation along (0 0 2) plane. High resolution SEM studies reveal the formation of Na-doped ZnO films having uniformly distributed nano-rods over the entire surface of the substrates at 400 °C. The complex impedance of the ZnO nano-rods shows two distinguished semicircles and the diameter of the arcs got decreased in diameter as the temperature increases from 170 to 270 °C and thereafter slightly increased

  1. Role of substrate temperature on the properties of Na-doped ZnO thin film nanorods and performance of ammonia gas sensors using nebulizer spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Mariappan, R., E-mail: marijpr@gmail.com [Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641 020, Tamil Nadu (India); Department of Physics, Adhiyamaan College of Engineering, Hosur 635 109, Tamilnadu (India); Ponnuswamy, V.; Suresh, R. [Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641 020, Tamil Nadu (India); Suresh, P. [Materials Research Centre, Indian Institute of Science, Bangalore 560 012 (India); Chandra Bose, A. [Department of Physics, National Institute of Technology, Tiruchirappalli 620 015, Tamil Nadu (India); Ragavendar, M. [Department of Physics, KPR Institute of Engineering and Technology, Coimbatore 641 407, Tamil Nadu (India)

    2014-01-05

    Highlights: • Na-doped ZnO films deposited on glass by nebulizer spray pyrolysis (NSP) method. • NSP method for large area coatings and good results as compared with other methods. • HR-SEM studies reveal the formation of Na-doped ZnO films consisting of nano-rods. • Na-doped ZnO films ensure their stability and suitability for gas sensors. -- Abstract: Sodium doped zinc oxide (Na:ZnO) thin films were deposited on glass substrates at substrate temperatures 300, 400 and 500 °C by a novel nebulizer spray method. X-ray diffraction shows that all the films are polycrystalline in nature having hexagonal structure with high preferential orientation along (0 0 2) plane. High resolution SEM studies reveal the formation of Na-doped ZnO films having uniformly distributed nano-rods over the entire surface of the substrates at 400 °C. The complex impedance of the ZnO nano-rods shows two distinguished semicircles and the diameter of the arcs got decreased in diameter as the temperature increases from 170 to 270 °C and thereafter slightly increased.

  2. Optical and structural properties of electrochemically deposited ZnO nanorod arrays suitable for improvement of the light harvesting in thin film solar cells

    International Nuclear Information System (INIS)

    The results of study of the optical and structural properties of ZnO nanorods (NR) arrays electrochemically deposited on two type substrates – the ITO surface on the front side of Si heterojunction (SHJ) solar cells and on stainless steel plate used for formation of a-Si:H thin film solar cells, are reported. The surface morphology of the NS arrays is examined by Scanning Electron Microscopy and AFM. The spectra of specular diffused and total reflection, and haze ratio in reflectance are compared before and after deposition of the ZnO NR arrays. In the case of deposition on ITO surface of SHJ solar cells the values of the direct and diffused reflection of the ZnO NR array decrease demonstrating good antireflection properties. Deposition of ZnO NS arrays on stainless steel plates leads to increasing the values of the diffused reflection and the total reflectance. Possible application of ZnO NS structures for the processing of advanced Si based solar cells for increasing light harvesting is discussed

  3. Broadband light trapping based on periodically textured ZnO thin films

    Science.gov (United States)

    Liu, Bofei; Liang, Xuejiao; Liang, Junhui; Bai, Lisha; Gao, Haibo; Chen, Ze; Zhao, Ying; Zhang, Xiaodan

    2015-05-01

    Transparent conductive front electrodes (TCFEs) deployed in photovoltaic devices have been extensively studied for their significance in transporting carriers, coupling and trapping the incident photons in high-performing solar cells. The trade-off between the light-transmission, electrical, and scattering properties for TCFEs to achieve a broadband improvement in light absorption in solar cells while maintaining a high electrical performance has become the key issue to be tackled. In this paper, we employ self-assembled polystyrene (PS) spheres based on a sauna-like method as a template, followed by a double-layer deposition and then successfully fabricate highly-transparent, well-conductive, and large-scale periodically-textured ZnO TCFEs with broadband light trapping properties. A sheet resistance below 15 Ω sq-1 was achieved for the periodically-textured ZnO TCFEs, with a concomitant average transmission of 81% (including the glass substrate) in the 400-1100 nm spectral range, a haze improvement in a broadband spectral range, and a wider scattering angular domain. The proposed approach affords a promising alternative method to prepare periodically-textured TCFEs, which are essential for many optoelectronic device semiconductors, such as photovoltaic and display applications.Transparent conductive front electrodes (TCFEs) deployed in photovoltaic devices have been extensively studied for their significance in transporting carriers, coupling and trapping the incident photons in high-performing solar cells. The trade-off between the light-transmission, electrical, and scattering properties for TCFEs to achieve a broadband improvement in light absorption in solar cells while maintaining a high electrical performance has become the key issue to be tackled. In this paper, we employ self-assembled polystyrene (PS) spheres based on a sauna-like method as a template, followed by a double-layer deposition and then successfully fabricate highly-transparent, well

  4. Observation of low resistivity and high mobility in Ga doped ZnO thin films grown by buffer assisted pulsed laser deposition

    International Nuclear Information System (INIS)

    Highlights: • Ga doped ZnO thin films were grown using buffer assisted pulsed laser deposition. • Lowest resistivity ∼5.1 × 10−5 Ω cm with a mobility of ∼41.9 cm2/V s was observed. • Buffer assisted growth methodology maintains relatively good crystalline quality. • This plays a key role in decreasing the resistivity of to the aforementioned value. • This resistivity value, to the best of our knowledge is the lowest so far in ZnO. - Abstract: We have grown Ga doped ZnO (GZO) thin films at moderate temperatures with Ga concentrations in the range varying from 0.25 to 3 at.% on sapphire substrates using buffer assisted pulsed laser deposition. Room temperature resistivity measured was ∼5.1 × 10−5 Ω cm with a electron mobility of ∼41.9 cm2/V s for an optimum Ga concentration of ∼0.75 at.% in the GZO films. Buffer assisted growth methodology maintains relatively good crystalline quality of the GZO thin films, thereby improving the electron mobility even at high dopant concentrations. This plays a key role in decreasing the resistivity of GZO films to the aforementioned value, which to the best of our knowledge is the lowest so far. These highly conducting GZO thin films with good mobility are potential candidates for transparent conducting oxide (TCO) applications in various optoelectronic devices

  5. Impact of low temperature annealing on structural, optical, electrical and morphological properties of ZnO thin films grown by RF sputtering for photovoltaic applications

    Science.gov (United States)

    Purohit, Anuradha; Chander, S.; Sharma, Anshu; Nehra, S. P.; Dhaka, M. S.

    2015-11-01

    This paper presents effect of low temperature annealing on the physical properties of ZnO thin films for photovoltaic applications. The thin films of thickness 50 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing radio frequency magnetron sputtering technique followed by thermal annealing within low temperature range 150-450 °C. These as-grown and annealed films were subjected to the X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) for structural, optical, electrical and surface morphological analysis respectively. The compositional analysis of the as-grown ZnO film was also carried out using energy dispersive spectroscopy (EDS). The XRD patterns reveal that the films have wurtzite structure of hexagonal phase with preferred orientation (1 0 0) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in detail. The optical band gap was found in the range 3.30-3.52 eV and observed to decrease with annealing temperature except 150 °C. The current-voltage characteristics show that the films exhibit approximately ohmic behavior. The SEM studies show that the films are uniform, homogeneous and free from crystal defects and voids. The experimental results reveal that ZnO thin films may be used as alternative materials for eco-friendly buffer layer to the thin film solar cell applications.

  6. Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application.

    Science.gov (United States)

    Chao, Chung-Hua; Wei, Da-Hua

    2015-10-03

    In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 (o)C. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 (o)C. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance. For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 (o)C by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application.

  7. Temperature Dependent Thermal Conductivity and Elastic Properties of a-InGaZnO4 and a-In2Ga2ZnO7 Thin Films

    Science.gov (United States)

    Thompson, W. D.; White, B. E.

    2016-10-01

    Amorphous In-Ga-Zn-O is an important oxide semiconductor in advanced display technologies. Despite its importance, little has been reported on the thermal and elastic properties of this material. Here, the temperature dependence of the thermal conductivity, shear modulus, and internal friction of a-InGaZnO4 and a-In2Ga2ZnO7 films are presented. The thermal conductivity of a-In2Ga2ZnO7, measured from 100 K to room temperature, was found to be larger than that of a-InGaZnO4 over the entire temperature range. At room temperature the thermal conductivities were 1.9 W/m K and 1.4 W/m K for the a-In2Ga2ZnO7 and a-InGaZnO4 films, respectively. The shear modulus and internal friction of these films were measured in the temperature range of 340 mK to 65 K. At 4.2 K the shear modulus of the a-InGaZnO4 and a-In2 Ga2ZnO7 films was 44 GPa and 42 GPa, respectively. The internal friction of thin films at each composition exhibited a temperature dependence and magnitude that is in agreement with that observed in all amorphous solids. As the self-heating effect is of concern in the development of amorphous In-Ga-Zn-O based thin film transistors on low thermal conductivity substrates, a thermal model of such a device utilizing a-In2Ga2ZnO7 or a-InGaZnO4 as the active layer was explored. It was found that the temperature increase of the thin film transistor channel is essentially independent of the thermal conductivity of the active layer.

  8. Effect of heat treatment on the properties of ZnO thin films prepared by successive ion layer adsorption and reaction (SILAR)

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez-Gonzalez, A.; Suarez-Parra, R. [Photovoltaic Systems Group, Laboratorio de Energia Solar, IIM, Universidad Nacional Autonoma de Mexico, Temixco, Morelos (Mexico)

    1996-10-03

    ZnO thin films prepared by the chemical deposition technique, SILAR (successive ion layer adsorption and reaction), exhibit zincite (hexagonal) structure, are transparent in the visible and infrared region (90 % optical transmittance), and photoconductive. Heat treatments significantly modify the stoichiometry and crystal structure of as-prepared ZnO and therefore its optical and electrical properties. The dark conductivity of ZnO thin films changes according to the gas atmosphere employed during the treatment. As-prepared samples (of thickness 667 A) show a dark conductivity of 1.50x10{sup -6} [{Omega}{center_dot}cm]{sup -1}, while a maximum dark conductivity of 2.70x10{sup -2} [ {Omega}{center_dot}cm]{sup -1} was achieved after consecutive heat treatments in O{sub 2} and H{sub 2} at 350C. The optical bandgap, 3.38 eV, of the as-prepared ZnO decreases by 0.125 eV after annealing. The activation energy for the dark conductivity is much less, 0.65 eV (as prepared) to 0.11 eV (annealed in O{sub 2}) indicating that the defect structure in the film plays an important part in the charge carrier transport

  9. Cu-Doped ZnO Thin Films Deposited by a Sol-Gel Process Using Two Copper Precursors: Gas-Sensing Performance in a Propane Atmosphere

    Directory of Open Access Journals (Sweden)

    Heberto Gómez-Pozos

    2016-01-01

    Full Text Available A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM and secondary ion mass spectroscopy (SIMS, respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C3H8, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 104, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C3H8 gas.

  10. A Low Temperature, Solution-Processed Poly(4-vinylphenol), YO(x) Nanoparticle Composite/Polysilazane Bi-Layer Gate Insulator for ZnO Thin Film Transistor.

    Science.gov (United States)

    Shin, Hyeonwoo; Kang, Chan-Mo; Chae, Hyunsik; Kim, Hyun-Gwan; Baek, Kyu-Ha; Choi, Hyoung Jin; Park, Man-Young; Do, Lee-Mi; Lee, Changhee

    2016-03-01

    Low temperature, solution-processed metal oxide thin film transistors (MEOTFTs) have been widely investigated for application in low-cost, transparent, and flexible electronics. To enlarge the application area, solution-processed gate insulators (GI) have been investigated in recent years. We investigated the effects of the organic/inorganic bi-layer GI to ZnO thin film transistors (TFTs). PVP, YO(x) nanoparticle composite, and polysilazane bi-layer showed low leakage current (-10(-8) A/cm2 in 2 MV), which are applicable in low temperature processed MEOTFTs. Polysilazane was used as an interlayer between ZnO and PVP, YO(x) nanoparticle composite as a good charge transport interface with ZnO. By applying the PVP, YO(x), nanoparticle composite/polysilazane bi-layer structure to ZnO TFTs, we successfully suppressed the off current (I(off)) to -10(-11) and fabricated good MEOTFTs in 180 degrees C. PMID:27455680

  11. Characterization and study of antibacterial activity of spray pyrolysed ZnO:Al thin films

    Science.gov (United States)

    Manoharan, C.; Pavithra, G.; Bououdina, M.; Dhanapandian, S.; Dhamodharan, P.

    2016-08-01

    Aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass substrates using spray pyrolysis technique with the substrate temperature of 400 °C. X-ray diffraction analysis indicated that the films were polycrystalline with hexagonal wurtzite structure preferentially oriented along (002) direction. Surface morphology of the films obtained by scanning electron microscopy showed that the grains were of nanoscale size with porous nature for 6 at.% of Al. Atomic force microscopy observations revealed that the particles size and surface roughness of the films decreased with Al-doping. Optical measurements indicated that ZnO:Al (6 at.%) exhibited a band gap of 3.11 eV, which is lower than that of pure ZnO film, i.e. 3.42 eV. Photoluminescence analysis showed weak NBE emission at 396 nm for Al-doped films. The low resistivity, high hall mobility and carrier concentration values were obtained at a doping ratio of 6 at.% of Al. The effective incorporation of 6 at.% of Al into ZnO lattice by occupying Zn sites yielded a well-pronounced antibacterial activity against Staphylococcus aureus.

  12. Synthesis of Colloidal ZnO Nanoparticles and Deposit of Thin Films by Spin Coating Technique

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2013-01-01

    Full Text Available ZnO colloidal nanoparticles were synthesized, the average size of these nanoparticles is around 25 nm with hexagonal form. It was noted that stabilization depends directly on the purifying process; in this work we do not change the nature of the solution as a difference from Meulekamp's method, and we do not use any alkanes to remove the byproducts; only a centrifuge to remove those ones was used, thereby the stabilization increases up to 24 days. It is observed from the results that only three times of washing is enough to prevent the rapid aging process. The effect of annealing process on the composition, size, and geometrical shape of ZnO nanoparticles was studied in order to know whether the annealing process affects the crystallization and growth of the nanoparticles. After the synthesis, the colloidal nanoparticles were deposited by spin coating technique showing that the formed nanoparticles have no uniformly deposition pattern. But is possible to deposit those ones in glass substrates. A possible deposition process of the nanoparticles is proposed.

  13. On tuning the orientation of grains of spray pyrolysed ZnO thin films

    International Nuclear Information System (INIS)

    Effect of varying spray rate on the structure and optoelectronic properties of spray pyrolysed ZnO film is analysed. ZnO films were characterised using different techniques such as X-ray diffraction (XRD), photoluminescence, electrical resistivity measurement, and optical absorption. The XRD analysis proved that, with the increase in spray rate, orientation of the grains changed from (1 0 1) plane to (0 0 2) plane. The films exhibited luminescence in two regions-one was the 'near band-edge' (NBE) (∼380 nm) emission and the other one was the 'blue-green emission' (∼503 nm). Intensity of the blue-green emission decreased after orientation of grains shifted to (0 0 2) plane. Scanning electron microscope (SEM) analysis of the films asserts that spray rate has major role in improving the crystallographic properties of the films. Moreover resistivity of the films could be lowered to 2.4 x 10-2 Ω cm without any doping or post-deposition annealing.

  14. Influence of oxygen partial pressure on optical and structural properties of RF sputtered ZnO thin films

    Science.gov (United States)

    Murkute, P.; Saha, S.; Pandey, S. K.; Chatterjee, A.; Datta, D.; Chakrabarti, S.

    2016-02-01

    In this paper we report a detailed investigation of ZnO thin film properties deposited on Si substrate at 400°C using RF sputtering. To reduce oxygen induced vacancies and interstitial defects in samples, variable oxygen flow rate during deposition followed by post growth annealing in oxygen ambient were carried out. Four samples were deposited under constant temperature condition but with variable oxygen partial pressure of 0%, 20%, 50% and 80% in Argon and Oxygen mixture, namely sample S1, S2 , S3 and S4 respectively. Deposited films were further annealed at 700, 800, 900 and 1000°C in oxygen ambient for 10s. Photoluminescence (PL) measurements carried at low temperature (18K) demonstrated near band edge emission peak of ZnO at 3.37eV. Increment in PL intensity was observed with increasing annealing temperature and a particular sample S4 annealed at 900 measured narrowest full width half maxima (FWHM) of ~0.1272eV. Defects peaks observed at lower energies were suppressed with increasing oxygen flow and post growth annealing, indicating improvement in film quality. From HRXRD measurement it was observed S4 sample annealed at 900°C has the highest peak intensity and narrowest FWHM compared to other samples, demonstrating the best crystalline property of annealed film at 900°C. Highest XRD peak intensity measured at 34.53° corresponds to (002) crystal orientation reveals that the films were highly caxis oriented. AFM results show increase in grain size with increasing oxygen flow and annealing temperature which ensures improvement in morphological properties of the film.

  15. Interaction of H and F atoms—Origin of the high conductive stability of hydrogen-incorporated F-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Yanmin [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Zhu, Liping, E-mail: zlp1@zju.edu.cn [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027 (China); Li, Yaguang; Niu, Wenzhe; Zhang, Xiangyu; Ye, Zhizhen [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2015-08-31

    We intentionally incorporated H into fluorine-doped ZnO thin films (FZO) by plasma treatment. Upon treatment, both mobility and electron concentration have an observable increase, especially the mobility reaches up to 30.1 cm{sup 2}V{sup −1} s{sup −1} (3 times higher than the untreated films). H distributes in the FZO thin films uniformly via plasma treatment. The treated FZO thin films showed good conductive stability at 500 °C and saved for 6 months, until now. Origin of high conductive stability was explained by first principle calculation. The results predicted that hydrogen atoms in interstitial sites next to F{sub O} are attracted by the incorporated fluorine atoms and this configuration has lower formation energy than the hydrogen in oxygen vacancy configuration. Thus, we owed the highly stable conductivity to the hydrogen as interstitial as well as hydrogen in oxygen vacancy. - Highlights: • We incorporated H into fluorine-doped ZnO thin films by plasma treatment. • Both mobility and electron concentration of the treated thin films have an observable increase. • The treated FZO thin films showed good conductive stability. • We owed the highly stable conductivity to the hydrogen as interstitial as well as hydrogen in oxygen vacancy.

  16. Spectroscopy and control of near-surface defects in conductive thin film ZnO

    KAUST Repository

    Kelly, Leah L

    2016-02-12

    The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

  17. Spectroscopy and control of near-surface defects in conductive thin film ZnO

    International Nuclear Information System (INIS)

    The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy. (paper)

  18. Intermittent spray pyrolytic growth of nanocrystalline and highly oriented transparent conducting ZnO thin films: Effect of solution spray rate

    Energy Technology Data Exchange (ETDEWEB)

    Mahajan, C.M., E-mail: c_mahajan9@yahoo.com [Department of Engineering Sciences and Humanities, Vishwakarma Institute of Technology, Pune 411 037 (India); School of Energy Studies, University of Pune, Pune 411 007 (India); Takwale, M.G. [School of Energy Studies, University of Pune, Pune 411 007 (India)

    2014-01-25

    Highlights: • ZnO films show enhancement in structural, optical and electrical properties. • Film orientation is altered from [0 0 2] to [1 0 1] direction for higher S{sub f} > 5 ml/min. • E{sub g} (eV) is influenced by variation in crystallinity, grain size and film thickness. • Nanocrystalline ZnO films are superior for TCO and optoelectronic applications. • FE-SEM and AFM study reveal growth of an array of vertically aligned ZnO nanorods. -- Abstract: Uniformly distributed jet of fine droplets was created with control of spray rate (S{sub f}) to deposit nanocrystalline ZnO thin films by spray pyrolysis technique. X-ray diffraction analysis indicated the polycrystalline film growth with most preferred orientation along c-axis [0 0 2] direction for S{sub f} ⩽ 4.5 ml/min, above which films favored [1 0 1] direction. FE-SEM and AFM analysis revealed the uniform vertical growth of ZnO nano-rods for S{sub f} = 2.5 ml/min and the film exhibited highest transmittance (95%) with lowest dark resistivity (∼10{sup −2} Ω-cm). The deposition rate increased due to rise in S{sub f}. Alteration of crystallinity, grain size and film thickness with variation in S{sub f} lead to variation of band-gap energy from 3.198 eV to 3.302 eV. ZnO film deposited at optimal S{sub f} = 2.5 ml/min exhibited maximum electrical conductivity σ = 78.8 Ω{sup −1}-cm{sup −1}, minimum sheet resistance R{sub s} = 2.04 × 10{sup 2} Ω/□ and highest figure of merit Φ{sub TC} = 2.93 × 10{sup −3} Ω{sup −1}.

  19. Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics

    Science.gov (United States)

    Sainju, Deepak

    Many modern optical and electronic devices, including photovoltaic devices, consist of multilayered thin film structures. Spectroscopic ellipsometry (SE) is a critically important characterization technique for such multilayers. SE can be applied to measure key parameters related to the structural, optical, and electrical properties of the components of multilayers with high accuracy and precision. One of the key advantages of this non-destructive technique is its capability of monitoring the growth dynamics of thin films in-situ and in real time with monolayer level precision. In this dissertation, the techniques of SE have been applied to study the component layer materials and structures used as back-reflectors and as the transparent contact layers in thin film photovoltaic technologies, including hydrogenated silicon (Si:H), copper indium-gallium diselenide (CIGS), and cadmium telluride (CdTe). The component layer materials, including silver and both intrinsic and doped zinc oxide, are fabricated on crystalline silicon and glass substrates using magnetron sputtering techniques. These thin films are measured in-situ and in real time as well as ex-situ by spectroscopic ellipsometry in order to extract parameters related to the structural properties, such as bulk layer thickness and surface roughness layer thickness and their time evolution, the latter information specific to real time measurements. The index of refraction and extinction coefficient or complex dielectric function of a single unknown layer can also be obtained from the measurement versus photon energy. Applying analytical expressions for these optical properties versus photon energy, parameters that describe electronic transport, such as electrical resistivity and electron scattering time, can be extracted. The SE technique is also performed as the sample is heated in order to derive the effects of annealing on the optical properties and derived electrical transport parameters, as well as the

  20. A DFT study on SO3 capture and activation over Si- or Al-doped graphene

    Science.gov (United States)

    Esrafili, Mehdi D.; Saeidi, Nasibeh; Nematollahi, Parisa

    2016-08-01

    This study reports the adsorption and favorable reaction mechanism of SO3 reduction by CO molecule over Si- or Al-doped graphene using DFT calculations. The adsorption energy of the most stable configuration of SO3 is calculated to be about -103 and -124 kcal/mol over the Si- and Al-doped graphene, respectively. The SO3 reduction over these surfaces proceeds through the following elementary steps (a) SO3 → SO2 + Oads and (b) Oads + CO → CO2. The estimated activation energy (Eact) for the dissociation of SO3 over the Si-doped graphene is about 9 kcal/mol smaller than that on the Al-doped graphene.

  1. A fabrication and magnetic properties study on Al doped Zn0.99Co0.01O dilution ferromagnetic semiconductors

    Institute of Scientific and Technical Information of China (English)

    Yu Zhou; Li Xiang; Long Xue; Cheng Xing-Wang; Liu Ying; Cao Chuan-Bao

    2009-01-01

    This paper reports that a chemical method is employed to synthesize Co and Al co-doped ZnO, namely,Zn0.99-xCo0.01AlxO dilution semiconductors with the nominal composition of x=0, 0.005 and 0.02. Structural,magnetic and optical properties of the produced samples are studied. The results indicate that samples sintered in air under the temperatures of 500 ℃ show a single wurtzite ZnO structure and the ferromagnetism decreases with the increase of Al. Photoluminescence spectra of different Al-doped samples indicate that increasing Al concentration in Zn0.99-xCo0.01AlxO results in a decrease of Zni, which resembles the trend of the ferromagnetic property of the corresponding samples. Therefore, it is deduced that the ferromagnetism observed in the studied samples originates from the interstitial defect of zinc (Zni) in the lattice of Co-doped ZnO.

  2. Room temperature inorganic polycondensation of oxide (Cu{sub 2}O and ZnO) nanoparticles and thin films preparation by the dip-coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Salek, G.; Tenailleau, C., E-mail: tenailleau@chimie.ups-tlse.fr; Dufour, P.; Guillemet-Fritsch, S.

    2015-08-31

    Oxide thin solid films were prepared by dip-coating into colloidal dispersions of oxide nanoparticles stabilized at room temperature without the use of chelating or complex organic dispersing agents. Crystalline oxide nanoparticles were obtained by inorganic polycondensation and characterized by X-ray diffraction and field emission gun scanning electron microscopy. Water and ethanol synthesis and solution stabilization of oxide nanoparticle method was optimized to prepare two different structural and compositional materials, namely Cu{sub 2}O and ZnO. The influence of hydrodynamic parameters over the particle shape and size is discussed. Spherical and rod shape nanoparticles were formed for Cu{sub 2}O and ZnO, respectively. Isoelectric point values of 7.5 and 8.2 were determined for cuprous and zinc oxides, respectively, after zeta potential measurements. A shear thinning and thixotropic behavior was observed in both colloidal sols after peptization at pH ~ 6 with dilute nitric acid. Every colloidal dispersion stabilized in a low cost and environmentally friendly azeotrope solution composed of 96 vol.% of ethanol with water was used for the thin film preparation by the dip-coating technique. Optical properties of the light absorber cuprous oxide and transparent zinc oxide thin solid films were characterized by means of transmittance and reflectance measurements (300–1100 nm). - Highlights: • Room temperature inorganic polycondensation of crystalline oxides • Water and ethanol synthesis and solution stabilization of oxide nanoparticles • Low cost method for thin solid film preparation.

  3. Ultrafast dynamics of the indoline dye D149 on electrodeposited ZnO and sintered ZrO2 and TiO2 thin films.

    Science.gov (United States)

    Oum, Kawon; Lohse, Peter W; Flender, Oliver; Klein, Johannes R; Scholz, Mirko; Lenzer, Thomas; Du, Juan; Oekermann, Torsten

    2012-11-28

    The ultrafast photoinjection and subsequent relaxation steps of the indoline dye D149 were investigated in detail for a mesoporous electrodeposited ZnO thin film and compared with experiments on sintered TiO(2) and ZrO(2) thin films, all in contact with air, using pump-supercontinuum probe (PSCP) transient absorption spectroscopy in the range 370-770 nm. D149 efficiently injects electrons into the ZnO surface with time constants from ≤70 fs (time-resolution-limited) up to 250 fs, without the presence of slower components. Subsequent spectral dynamics with a time constant of 20 ps and no accompanying change in the oscillator strength are assigned to a transient Stark shift of the electronic absorption spectrum of D149 molecules in the electronic ground state due to the local electric field exerted by the D149˙(+) radical cations and conduction band electrons in ZnO. This interpretation is consistent with the shape of the relaxed PSCP spectrum at long times, which resembles the first derivative of the inverted steady-state absorption spectrum of D149. In addition, steady-state difference absorption spectra of D149˙(+) in solution from spectroelectrochemistry display a bleach band with distinctly different position, because no first-order Stark effect is present in that case. Interference features in the PSCP spectra probably arise from a change of the refractive index of ZnO caused by the injected electrons. The 20 ps component in the PSCP spectra is likely a manifestation of the transition from an initially formed bound D149˙(+)-electron complex to isolated D149˙(+) and mobile electrons in the ZnO conduction band (which changes the external electric field experienced by D149) and possibly also reorientational motion of D149 molecules in response to the electric field. We identify additional spectral dynamics on a similar timescale, arising from vibrational relaxation of D149˙(+) by interactions with ZnO. TiO(2) exhibits similar dynamics to ZnO. In the case of

  4. Thermoelectric properties of Al doped Mg{sub 2}Si material

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Kulwinder, E-mail: kulwindercmp@gmail.com; Kumar, Ranjan [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Rani, Anita [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Guru Nanak College for Girls, Sri Muktsar Sahib, Punjab (India)

    2015-08-28

    In the present paper we have calculated thermoelectric properties of Al doped Mg{sub 2}Si material (Mg{sub 2−x}Al{sub x}Si, x=0.06) using Pseudo potential plane wave method based on DFT and Semi classical Boltzmann theory. The calculations showed n-type conduction, indicating that the electrical conduction are due to electron. The electrical conductivity increasing with increasing temperature and the negative value of Seebeck Coefficient also show that the conduction is due to electron. The thermal conductivity was increased slightly by Al doping with increasing temperature due to the much larger contribution of lattice thermal conductivity over electronic thermal conductivity.

  5. Investigation of initial growth and very thin (112-bar 0) ZnO films by cross-sectional and plan-view transmission electron microscopy

    International Nuclear Information System (INIS)

    Initial growth and very thin a-plane (112-bar 0) ZnO films grown on r-plane (11-bar 02) Al2O3 substrates by plasma-assisted molecular beam epitaxy (PAMBE) were studied using cross-sectional and plan-view transmission electron microscopy (TEM). The ZnO films were grown via Volmer-Weber growth mode, in which the (101-bar 0) facets were developed first followed by the (112-bar 0) facets. Critical thickness was determined to be a value between 2.5 and 3.5 nm. Since surface normal of the (11-bar 02) Al2O3 is [11-bar 00.4025], while that of (112-bar 0) ZnO is [112-bar 0], two diffraction patterns for Al2O3 [22-bar 01] and ZnO [112-bar 0] zone axes were overlapped, which shows very different features in the bright field (BF) micrographs and selected area electron diffraction (SAED) patterns. So, careful analysis and caution are needed in characterizing the structural defects by plan-view TEM.

  6. Effect of doping elements on ZnO etching characteristics with CH4/H2/Ar plasma

    International Nuclear Information System (INIS)

    Effect of doping elements on the etching characteristics of doped-ZnO (Ag, Li, and Al) thin films, etched with a positive photoresist (PR) mask, and an etch process window for infinite etch selectivity were investigated by varying the CH4 flow ratio and self-bias voltage, Vdc, in inductively coupled CH4/H2/Ar plasmas. Increased doping of ZnO films decreased the etch rates significantly presumably due to lower volatility of reaction by-products of doped Li, Ag, and Al in CH4/H2/Ar plasmas. The etch rate of AZO (Al-doped ZnO) was most significantly decreased as the doping concentration is increased from 4 to 10 wt%. It was found that process window for infinite etch selectivity of the doped ZnO to the PR is closely related to a balance between deposition and removal processes of a-C:H (amorphous hydrogenated carbon) layer on the doped-ZnO surface. Measurements of optical emission of the radical species in the plasma and surface binding states by optical emission spectroscopy (OES) and X-ray photoelectron spectroscopy (XPS), respectively, implied that the chemical reaction of CH radicals with Zn atoms in doped-ZnO play an important role in determining the doped-ZnO etch rate together with an ion-enhanced removal mechanism of a-C:H layer as well as Zn(CHx)y etch by-products

  7. Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    The electrical properties of zinc oxide (ZnO) thin films of various thicknesses (0.3–4.4 µm) grown by metalorganic chemical vapour deposition on glass substrates have been studied by using temperature-dependent Hall-effect (TDH) measurements in the 18–300 K range. The high quality of the layers has been confirmed with x-ray diffraction, transmission electron microscopy, scanning electron microscopy and photoluminescence techniques. TDH measurements indicate the presence of a degenerate layer which significantly influences the low-temperature data. It is found that the measured mobility generally increases with increasing layer thickness, reaching a value of 120 cm2 V−1 s−1 at room temperature for the 4.4 µm thick sample. The lateral grain size of the layers is also found to increase with thickness indicating a clear correlation between the size of the surface grains and the electrical properties of corresponding films. Theoretical fits to the Hall data suggest that the bulk conduction of the layers is dominated by a weakly compensated donor with activation energy in the 33–41 meV range and concentration of the order of 1017 cm−3, as well as a total acceptor concentration of mid-1015 cm−3. Grain boundary scattering is found to be an important limiting factor of the mobility throughout the temperature range considered

  8. On the sol pH and the structural, optical and electrical properties of ZnO thin films

    Science.gov (United States)

    Meziane, K.; El Hichou, A.; El Hamidi, A.; Mansori, M.; Liba, A.; Almaggoussi, A.

    2016-05-01

    Zinc oxide thin films were prepared by the sol-gel method and deposed on glass substrate using spin coating technique. The variation of the structural, optical and electrical properties with various pH values is investigated. pH values of the sol were adjusted with glacial acetic acid and ammonia. X-ray diffraction analysis showed that the films with alkaline sol are crystallized while those with acidic sol are amorphous. High values of texture coefficient and a high diffraction intensity of the (002) peak, ensuring better growth along c-axis, were obtained for an optimal pH value of 9.5. The crystallite size of the obtained films strongly depends on the sol pH. Scanning Electron Microscopy (SEM) images confirm that the morphology and grain size of the films are affected significantly by pH. The optical transmission was recorded to analyze the optical properties of the studied films. It was found that the optical gap increased with pH. The electrical properties were measured by Hall-effect and reveal an increase of the resistivity when the sol pH increases. A minimum residual intrinsic electrons density suitable for p-type ZnO was reached.

  9. Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kuznetsov, Vladimir L.; Vai, Alex T.; Edwards, Peter P., E-mail: peter.edwards@chem.ox.ac.uk [Department of Chemistry, Inorganic Chemistry Laboratory, University of Oxford, Oxford OX1 3QR (United Kingdom); Al-Mamouri, Malek; Stuart Abell, J. [Department of Metallurgy and Materials, University of Birmingham, Birmingham B15 2TT (United Kingdom); Pepper, Michael [Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE (United Kingdom)

    2015-12-07

    Highly conducting (ρ = 3.9 × 10{sup −4} Ωcm) and transparent (83%) polycrystalline Si-doped ZnO (SiZO) thin films have been deposited onto borosilicate glass substrates by pulsed laser deposition from (ZnO){sub 1−x}(SiO{sub 2}){sub x} (0 ≤ x ≤ 0.05) ceramic targets prepared using a sol-gel technique. Along with their structural, chemical, and optical properties, the electronic transport within these SiZO samples has been investigated as a function of silicon doping level and temperature. Measurements made between 80 and 350 K reveal an almost temperature-independent carrier concentration consistent with degenerate metallic conduction in all of these samples. The temperature-dependent Hall mobility has been modeled by considering the varying contribution of grain boundary and electron-phonon scattering in samples with different nominal silicon concentrations.

  10. Effect of precursor solvent on the opto-electrical properties of spin coated transparent conducting ZnO: Ga thin films

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Amit Kumar, E-mail: akrsri@gmail.com; Kumar, Jitendra

    2015-07-15

    ZnO: Ga thin films have been prepared by spin coating on glass substrate using solutions of zinc acetate dihydrate and gallium nitrate hydrate precursors in methanol, ethanol and 2-methoxyethanol with mono-ethanolamine as complexing agent to examine the effect of solvent on their opto-electrical characteristics. The selection of the solvent involves factors like toxicity, sol stability and the film properties. Accordingly, ethanol is shown to be suitable for yielding a stable sol to produce low cost 1 at% Ga−ZnO thin films useful for photovoltaic applications. These films exhibit hexagonal structure with (0001) preferred orientation, optical transmittance of ∼75−96% in wavelength range 400−900 nm, electrical resistivity of ∼ 3 × 10{sup −2} Ω-cm and electron mobility of ∼24 cm{sup 2}/ V. s. - Highlights: • c-axis preferred orientation of spin coated Ga-doped ZnO thin films. • Selection of solvents for preparation of precursor solutions. • Alternative transparent conducting oxide thin films. • Low cost method.

  11. Growth of Ag thin films on ZnO(0 0 0 -1) investigated by AES and STM

    Energy Technology Data Exchange (ETDEWEB)

    Duriau, E. [Interuniversity Microelectronic Center (IMEC), SPDT-MCA, Kapeldreef 75, B-3001 Leuven (Belgium); Agouram, S. [Dpto. Fisica Aplicada y Electromagnetismo c/Dr. Moliner no. 50, 46100 Burjassot, Valencia (Spain); Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Morhain, C. [Centre de Recherche sur l' HeteroEpitaxie et ses Applications (CRHEA), CNRS, Rue Bernard Gregory, F-06560 Valbonne Sophia-Antipolis (France); Seldrum, T. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Sporken, R. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Dumont, J. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium)]. E-mail: jacques.dumont@fundp.ac.be

    2006-11-15

    The growth of Ag films on ZnO(0 0 0 -1) has been investigated by Auger electron spectroscopy (AES) and scanning tunneling microscopy (STM). A high density of islands is nucleated at the earliest stages of the growth. An upstepping mechanism causes these islands to coalesce while the uncovered fraction of the ZnO surface remains constant (30%)

  12. Electrochemical Tailoring of Honeycomb-Structured ZnO Thin Films by Interfacial Surfactant Templating

    OpenAIRE

    Pawar, B. G.; Salvi, P. P.; S. S. Kolekar

    2012-01-01

    Zinc oxide thin films with honeycomb structures can be electrochemically produced by interfacial surfactant templating. Newly synthesized 4-amino-1-(2,3-dihydroxy propyl) pyridinium hydroxide ionic liquid exhibiting the hydroxyl functionalized ionic liquids (HFILs) was used in electrodeposition. This method utilizes amphiphile assemblies at the solid-liquid interface (i.e., the surface of a working electrode) as a template to gain the precisely tailor zinc oxide nanostructures. The results de...

  13. Waveguiding-assisted random lasing in epitaxial ZnO thin film

    OpenAIRE

    Dupont, P. -H.; Couteau, C.; Rogers, D.J.; Téhérani, F. Hosseini; Lérondel, G.

    2013-01-01

    Zinc Oxide thin films were grown on c-sapphire substrates using pulsed laser deposition. Pump power dependence of surface emission spectra, acquired using a quadrupled 266 nm laser, revealed room temperature stimulated emission (threshold of 900 kW/cm2). Time dependent spectral analysis plus gain measurements of single-shot, side-emission, spectra pumped with a nitrogen laser revealed random lasing indicative of the presence of self-forming laser cavities. It is suggested that random lasing i...

  14. Effect of substrate temperature on transparent conducting Al and F co-doped ZnO thin films prepared by rf magnetron sputtering

    Science.gov (United States)

    Wang, Fang-Hsing; Chang, Chiao-Lu

    2016-05-01

    ZnO is a wide bandgap semiconductor that has many potential applications such as solar cells, thin film transistors, light emitting diodes, and gas/biological sensors. In this study, a composite ceramic ZnO target containing 1 wt% Al2O3 and 1.5 wt% ZnF2 was prepared and used to deposit transparent conducting Al and F co-doped zinc oxide (AFZO) thin films on glass substrates by radio frequency magnetron sputtering. The effect of substrate temperatures ranging from room temperature (RT) to 200 °C on structural, morphological, electrical, chemical, and optical properties of the deposited thin films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), Hall effect measurement, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and UV-vis spectrophotometer. The XRD results showed that all the AFZO thin films had a (0 0 2) diffraction peak, indicating a typical wurtzite structure with a preferential orientation of the c-axis perpendicular to the substrate. The FE-SEM and AFM analyses indicated that the crystallinity and grain size of the films were enhanced while the surface roughness decreased as the substrate temperature increased. Results of Hall effect measurement showed that Al and F co-doping decreased the resistivity more effectively than single-doping (either Al or F doping) in ZnO thin films. The resistivity of the AFZO thin films decreased from 5.48 × 10-4 to 2.88 × 10-4 Ω-cm as the substrate temperature increased from RT to 200 °C due to the increased carrier concentration and Hall mobility. The optical transmittances of all the AFZO thin films were over 92% in the wavelength range of 400-800 nm regardless of substrate temperature. The blue-shift of absorption edge accompanied the rise of the optical band gap, which conformed to the Burstein-Moss effect. The developed AFZO thin films are suitable as transparent conducting electrodes for various optoelectronic

  15. Functional doped metal oxide films. Zinc oxide (ZnO) as transparent conducting oxide (TCO) titanium dioxide (TiO{sub 2}) as thermographic phosphor and protective coating

    Energy Technology Data Exchange (ETDEWEB)

    Nebatti Ech-Chergui, Abdelkader

    2011-07-29

    Metalorganic chemical vapor deposition (MOCVD) was used in the present work. Un-doped and Al-doped ZnO films were developed using two reactors: Halogen Lamp Reactor (HLR) (a type of Cold Wall Reactor) and Hot Wall Reactor (HWR), and a comparison was made between them in terms of the film properties. Zinc acetylacetonate was used as precursor for ZnO films while aluminum acetylacetonate was used for doping. The amount of Al doping can be controlled by varying the gas flow rate. Well ordered films with aluminum content between 0 and 8 % were grown on borosilicate glass and silicon. The films obtained are 0.3 to 0.5 {mu}m thick, highly transparent and reproducible. The growth rate of ZnO films deposited using HLR is less than HWR. In HLR, the ZnO films are well oriented along c-axis ((002) plane). ZnO films are commonly oriented along the c-axis due to its low surface free energy. On the other hand, the HWR films are polycrystalline and with Al doping these films aligned along the a-axis ((100) plane) which is less commonly observed. The best films were obtained with the HLR method showing a minimum electrical resistivity of 2.4 m{omega}cm and transmittance of about 80 % in the visible range. The results obtained for Al-doped films using HLR are promising to be used as TCOs. The second material investigated in this work was un-doped and doped titanium dioxide (TiO{sub 2}) films- its preparation and characterization. It is well known that thermographic phosphors can be used as an optical method for the surface temperature measurement. For this application, the temperature-dependent luminescence properties of europium (III)-doped TiO{sub 2} thin films were studied. It was observed that only europium doped anatase films show the phosphorescence. Rutile phase do not show phosphorescence. The films were prepared by the sol-gel method using the dip coating technique. The structures of the films were determined by X-ray diffraction (XRD). The excitation and the emission

  16. Structural, linear and nonlinear optical properties of co-doped ZnO thin films

    Science.gov (United States)

    Shaaban, E. R.; El-Hagary, M.; Moustafa, El Sayed; Hassan, H. Shokry; Ismail, Yasser A. M.; Emam-Ismail, M.; Ali, A. S.

    2016-01-01

    Different compositions of Co-doped zinc oxide [(Zn(1- x)Co x O) ( x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10)] thin films were evaporated onto highly clean glass substrates by thermal evaporation technique using a modified source. The structural properties investigated by X-ray diffraction revealed hexagonal wurtzite ZnO-type structure. The crystallite size of the films was found to decrease with increasing Co content. The optical characterization of the films has been carried out using spectral transmittance and reflectance obtained in the wavelength range from 300 to 2500 nm. The refractive index has been found to increase with increasing Co content. It was further found that optical energy gap decreases from 3.28 to 3.03 eV with increasing Co content from x = 0 to x = 0.10, respectively. The dispersion of refractive index has been analyzed in terms of Wemple-DiDomenico (WDD) single-oscillator model. The oscillator parameters, the single-oscillator energy ( E o), the dispersion energy ( E d), and the static refractive index ( n 0), were determined. The nonlinear refractive index of the Zn(1- x)Co x O thin films was calculated and revealed well correlation with the linear refractive index and WDD parameters which in turn depend on the density and molar volume of the system.

  17. Determination of the optimal parameters for the fabrication of ZnO thin films prepared by spray pyrolysis method

    Indian Academy of Sciences (India)

    M Ardyanian; M M Bagheri-Mohagheghi; N Sedigh

    2012-04-01

    In this work, ZnO thin films have been prepared by spray pyrolysis deposition method on the glass substrates. The effect of deposition parameters, such as deposition rate, substrate temperature and solution volume has been studied by X-ray diffraction (XRD) method, UV–Vis–NIR spectroscopy, scanning electron microscopy (SEM), and electrical measurements. The XRD patterns indicate polycrystalline wurtzite structure with preferred direction along (0 0 2) planes. Thin films have transparency around 90% in the visible range. The optical band gap was determined at 3.27 eV which did not change significantly. Evolution of electrical results containing the carriers' density, sheet resistance and resistivity are in agreement with structural results. All the results suggest the best deposition parameters are: deposition rate, = 3 ml/min, substrate temperature, s = 450°C and thickness of the thin films = 110–130 nm.

  18. Influence of hydrogen introduction on structure and properties of ZnO thin films during sputtering and post-annealing

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, B.L., E-mail: zhubailin97@hotmail.co [Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, School of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Wang, J.; Zhu, S.J.; Wu, J.; Wu, R. [Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, School of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Zeng, D.W.; Xie, C.S. [Department of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2011-03-31

    ZnO thin films were prepared in Ar and Ar + H{sub 2} atmospheres by rf magnetron sputtering, and then they were annealed in vacuum and Ar + H{sub 2} atmosphere, respectively. The structure and optical-electrical properties of the films were investigated by X-ray diffraction, transmittance spectra, and resistivity measurement, and their dependences on deposition atmosphere, annealing treatment, and aging were studied. The results showed that adding H{sub 2} in deposition atmosphere improved the crystallinity of the films, decreased lattice constant, increased band gap, decreased the resistivity by the order of 10{sup 4} {Omega} cm, but exhibited poor conductive stability with aging. After Ar + H{sub 2} and vacuum annealing, crystallinity of the films deposited in Ar and Ar + H{sub 2} was further improved; their resistivity was decreased by the order of 10{sup 5} and 10{sup 1} {Omega} cm, respectively, and exhibited high conductive stability with aging. We suggest that the formed main defect is V{sub O} and H{sub i} when H{sub 2} is introduced during deposition, which decreases the resistivity but cannot improve the conductive stability; hydrogen would remove negatively charged oxygen species near grain boundaries during Ar + H{sub 2} annealing to decrease the resistivity, and grain boundaries are passivated by formation of a number of V{sub O}-H complex (H{sub O}) to improve the conductive stability at the same time. Under vacuum annealing, the hydrogen that is introduced non-intentionally from deposition chamber maybe plays an important role; it exists as H{sub O} in the films to improve the conductive stability of the films.

  19. The effect of substrate temperature on structural and optical properties of D.C. sputtered ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, A.A., E-mail: sema@just.edu.jo [Department of Physical Sciences, Jordan University of Science & Technology, P.O. Box 3030, Irbid 22110 (Jordan); Alsaad, A.M. [Department of Physical Sciences, Jordan University of Science & Technology, P.O. Box 3030, Irbid 22110 (Jordan); Department of Physics, University of Nebraska at Omaha, Omaha, NE 68182 (United States); Albiss, B.A.; Al- Akhras, M-Ali [Department of Physical Sciences, Jordan University of Science & Technology, P.O. Box 3030, Irbid 22110 (Jordan); El-Nasser, H.M. [Department of Physics, Al al-Bayt University, Marfraq (Jordan); Qattan, I.A. [Department of Applied Mathematics and Sciences, Khalifa University of Science, Technology and Research, P.O. Box 573, Sharjah (United Arab Emirates)

    2015-08-15

    Zinc oxide (ZnO) thin films were deposited on (100) silicon substrates via d.c. sputtering process with unbalanced magnetron configuration at various substrate temperatures (room temperature to 300 °C in steps of 100 °C) at 200 W power. Variable angle spectroscopic ellipsometry (VASE) characterization technique was used to study the optical properties of the samples in the UV–visible spectral range of 300–800 nm (around 1.5–4.2 eV). The optical properties of the films, including the index of refraction, the extinction coefficient, the band gap energy and the absorption coefficient were systematically investigated as functions of the substrate temperatures. Our mathematical modeling analysis shows that the refractive index obeys the second ordered Sellmeier's dispersion formulation, while Urbach's absorption energy and exponential tail are formulated with Cauchy-like dispersion model for the extinction coefficient. The band gap energy (extrapolated from Tauc plot) ranges from 3.19 to 3.33 eV with a maximum value at 300 °C substrate temperature. The single oscillator energy (E{sub o}), dispersion energy (E{sub d}), wavelength (λ{sub o}), average strength (S{sub o}) moments of the optical spectra (M{sub −1} and M{sub −3}) and the static index of refraction n(∞) were estimated based on effective single oscillator model proposed by Wemple and DiDomenico. The films X-ray diffraction studies reveal a polycrystalline microstructure with preferred (002) orientation. Our results are physically interpreted and discussed.

  20. Optical and Electrical Properties of Heavy-doped AZO Transparent Conducting Thin Films%重掺杂AZO透明导电薄膜的光电特性

    Institute of Scientific and Technical Information of China (English)

    吕有明; 曹培江; 贾芳; 柳文军; 朱德亮; 马晓翠; 林传强; 刘稳

    2011-01-01

    Al-doped ZnO (AZO) film have been actively investigated for potential applications in solar cells,flat panel displays, transparent heat mirrors and organic light emitting diodes,etc. , because of high transmittance in the visible region, low resistance and better stability. Extensive work has been concentrated on the fabrication and characterization of AZO thin films. All results show that the average transmittance of the visible light is above 80%, the resistivity can be changed from values as low as 10-4 Ω · cm to values as high as 104 Ω · cm. However, a few researches are devoted to the optical and electrical properties in heavy Al doping AZO thin films. In particular, there are hardly any reports regarding the conductivity mechanism of heavily doped AZO thin films. In this paper, AZO thin films with heavy Al doping concentration were grown on quartz (SiO2) substrates by pulsed laser deposition (PLD) method. ZnO mixed with Al203 (mass fraction is 2% ) was used as target.The structure, optical and electrical properties of AZO thin films were investigated by using X-ray diffraction (XRD), transmission spectra, photoluminescence (PL) spectra and Hall effect measurement. XRD patterns indicate that all AZO thin films have the wurtzite structure of ZnO with a strong c-axis preferred orientation.The electrical measurement of AZO thin films show a good conductivity. The highest carrier density and the Hall mobility are 9. O1 × 1020 cm-3 and 33 cm2 · V-1 · s-1, respectively. The conducting mechanism was studied by temperature-dependent Hall-effect measurement. The temperature variation of cartier concentration from shows alike-metallic conducting behavior. All AZO thin films have good optical quality. The optical transmittance is above 80%, the highest transmittance is about 90%. The PL spectrum in AZO thin films is dominated by near band edge (NBE) emission at room temperature. The absorption edge and NBE emission peak of AZO thin films show an obvious

  1. Waveguiding-assisted random lasing in epitaxial ZnO thin film

    Science.gov (United States)

    Dupont, P.-H.; Couteau, C.; Rogers, D. J.; Hosseini Téhérani, F.; Lérondel, G.

    2010-12-01

    Zinc oxide thin films were grown on c-sapphire substrates using pulsed laser deposition. Pump power dependence of surface emission spectra, acquired using a quadrupled 266 nm laser, revealed room temperature stimulated emission (threshold of 900 kW/cm2). Time dependent spectral analysis plus gain measurements of single-shot, side-emission spectra pumped with a nitrogen laser revealed random lasing indicative of the presence of self-forming laser cavities. It is suggested that random lasing in an epitaxial system rather than a three-dimensional configuration of disordered scattering elements was due to waveguiding in the film. Waveguiding causes light to be amplified within randomly formed closed-loops acting as lasing cavities.

  2. Effects of Low Ag Doping on Physical and Optical Waveguide Properties of Highly Oriented Sol-Gel ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Mohamed Dehimi

    2015-01-01

    Full Text Available A sol-gel dip-coating process was used to deposit almost stress-free highly c-axis oriented zinc oxide (ZnO thin films onto glass substrates. The effects of low silver doping concentration (Ag/Zn < 1% on the structural, morphological, optical, and waveguide properties of such films were investigated by X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy, UV-Visible spectrophotometry, and M-lines spectroscopy (MLS. XRD analysis revealed that all the films were in single phase and had a hexagonal wurtzite structure. The grain size values were calculated and found to be about 24–29 nm. SEM micrographs and AFM images have shown that film morphology and surface roughness were influenced by Ag doping concentration. According to UV-Vis. measurements all the films were highly transparent with average visible transmission values ranging from 80% to 86%. It was found that the Ag contents lead to widening of the band gap. MLS measurements at 632.8 nm wavelength put into evidence that all thin film planar waveguides demonstrate a well-guided fundamental mode for both transverse electric and transverse magnetic polarized light. Moreover, the refractive index of ZnO thin films was found to increase by Ag doping levels.

  3. Transparent, amorphous and organics-free ZnO thin films produced by chemical solution deposition at 150 {sup o}C

    Energy Technology Data Exchange (ETDEWEB)

    Tellier, J. [Jozef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Kuscer, D., E-mail: danjela.kuscer@ijs.s [Jozef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Malic, B.; Cilensek, J.; Skarabot, M.; Kovac, J. [Jozef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Goncalves, G. [CEMOP Uninova, CEMAT I3N, FCT-UNL, Caparica 2829-516 (Portugal); Musevic, I.; Kosec, M. [Jozef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia)

    2010-07-01

    We have studied the low-temperature processing of ZnO by chemical solution deposition. A transparent, stable precursor solution prepared from zinc acetate dihydrate dissolved in 2-methoxyethanol was spin-coated on SiO{sub x}/Si, soda-lime glass and polymer substrates and heated at 150 {sup o}C. Selected thin films deposited on SiO{sub x}/Si were additionally heated at 450 {sup o}C. Microstructural and chemical analyses showed that the thin films heated at 150 {sup o}C in air were amorphous, contained no organic residues and had a root mean square roughness of 0.7 nm. The films deposited on SiO{sub x}/Si and heated at 450 {sup o}C were crystallised and consisted of randomly oriented grains with a diameter of about 20 nm. All thin films were transparent, exhibiting a transmission of over 80% in the visible range. The resistivity of the 120-nm thick ZnO films processed at 150 {sup o}C was 57 M{Omega} cm and upon heating at 450 {sup o}C it decreased to 1.9 k{Omega} cm.

  4. Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary

    Institute of Scientific and Technical Information of China (English)

    Zhou Yu-Ming; He Yi-Gang; Lu Ai-Xia; Wan Qing

    2009-01-01

    The grain boundaries (GBs) have a strong effect on the electric properties of ZnO thin film transistors (TFTs).A novel grain boundary model was developed to analyse the effect. The model was characterized with different angles between the orientation of the grain boundary and the channel direction. The potential barriers formed by the grain boundaries increase with the increase of the grain boundary angle,so the degradation of the transistor characteristics increases. When a grain boundary is close to the drain edge,the potential barrier height reduces,so the electric properties were improved.

  5. Growth, structural and electrical properties of polar ZnO thin films on MgO (100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nistor, M., E-mail: mnistor@infim.r [National Institute for Lasers, Plasma and Radiation Physics, Plasma Physics and Nuclear Fusion Laboratory, L22 P.O. Box. MG-36, 77125 Bucharest-Magurele (Romania); Mandache, N.B. [National Institute for Lasers, Plasma and Radiation Physics, Plasma Physics and Nuclear Fusion Laboratory, L22 P.O. Box. MG-36, 77125 Bucharest-Magurele (Romania); Perriere, J.; Hebert, C. [Institut des Nanosciences de Paris, Universite Pierre et Marie Curie-Paris 6, CNRS UMR 7588, Campus Boucicaut, 140 rue de Lourmel, 75015 Paris (France); Gherendi, F. [National Institute for Lasers, Plasma and Radiation Physics, Plasma Physics and Nuclear Fusion Laboratory, L22 P.O. Box. MG-36, 77125 Bucharest-Magurele (Romania); Seiler, W. [Laboratoire d' Ingenierie des Materiaux, Ecole Nationale Superieure des Arts et Metiers, CNRS UMR 8006, 151 Boulevard de l' Hopital, 75013 Paris (France)

    2011-03-31

    ZnO films have been grown on (100) oriented MgO substrates by pulsed-electron beam deposition in the room temperature to 500 {sup o}C range. Highly (00.2) textured films are obtained for a growth temperature higher than 200 {sup o}C, and epitaxial films are formed at 500 {sup o}C with the following epitaxial relationships: (1-1.0){sub ZnO} // (110){sub MgO} and (11.0){sub ZnO} // (110){sub MgO}, despite the difference in symmetry between film and substrate. The low temperature resistivity curves evidenced a metal-semiconductor transition for the ZnO films grown in the 300 to 500 {sup o}C range which has been interpreted in the frame of the model of conductivity in disordered oxides.

  6. Near Band-Edge and Mid-Gap Photoluminescence of a ZnO Thin Film Grown on a (001) silicon Substrate

    Institute of Scientific and Technical Information of China (English)

    郭冰; 叶辉; 丘志仁

    2003-01-01

    A nominally undoped wurtzite ZnO thin film of highly c-axis orientation was successfully grown on (001) silicon by metal-organic chemical vapour deposition, and its photoluminescence was measured as a function of excitation intensity at room temperature. The ZnO sample exhibited a strong near band-edge (NBE) line at 379.48nm (3.267eV) and a weak broad green band around ~ 510 nm (2.43eV), showing a linear and sublinear excitation dependence of the luminescence intensity, respectively. No discernible intensity dependence of lineshape and emission peak was found for the NBE line. On the other hand, the peak energy of the green luminescence was found to increase nearly logarithmically with the increasing excitation intensity. The above results clearly indicate that in the ZnO epilayer, the NBE line was due to an excitonic spontaneous emission, while the mid-gap green luminescence can be assigned to the tunnel-assisted donor-acceptor pair (DAP) radiative recombination.Moreover, we obtained an energy depth β~ 11.74 meV for the potential wells due to the fluctuating distribution of the unintentional impurities/defects responsible for the tunnel-assisted DAP emission.

  7. Observation of dopant-profile independent electron transport in sub-monolayer TiOx stacked ZnO thin films grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiOx in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiOx structures in the emerging field of transparent oxide electronics

  8. Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Das, Gangadhar [Indus Synchrotrons Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2016-01-18

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.

  9. Area and energy efficient high-performance ZnO wavy channel thin-film transistor

    KAUST Repository

    Hanna, Amir

    2014-09-01

    Increased output current while maintaining low power consumption in thin-film transistors (TFTs) is essential for future generation large-area high-resolution displays. Here, we show wavy channel (WC) architecture in TFT that allows the expansion of the transistor width in the direction perpendicular to the substrate through integrating continuous fin features on the underlying substrate. This architecture enables expanding the TFT width without consuming any additional chip area, thus enabling increased performance while maintaining the real estate integrity. The experimental WCTFTs show a linear increase in output current as a function of number of fins per device resulting in (3.5×) increase in output current when compared with planar counterparts that consume the same chip area. The new architecture also allows tuning the threshold voltage as a function of the number of fin features included in the device, as threshold voltage linearly decreased from 6.8 V for planar device to 2.6 V for WC devices with 32 fins. This makes the new architecture more power efficient as lower operation voltages could be used for WC devices compared with planar counterparts. It was also found that field effect mobility linearly increases with the number of fins included in the device, showing almost \\\\(1.8×) enhancements in the field effect mobility than that of the planar counterparts. This can be attributed to higher electric field in the channel due to the fin architecture and threshold voltage shift. © 2014 IEEE.

  10. Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited -ZnO Thin Films and Applications in p-i-n -Si:H Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2013-01-01

    Full Text Available A compound of ZnO with 3 wt% Ga2O3 (ZnO : Ga2O3 = 97 : 3 in wt%, GZO was sintered at C as a target. The GZO thin films were deposited on glass using a radio frequency magnetron sputtering system at C by changing the deposition power from 50 W to 150 W. The effects of deposition power on the crystallization size, lattice constant (c, resistivity, carrier concentration, carrier mobility, and optical transmission rate of the GZO thin films were studied. The blue shift in the transmission spectrum of the GZO thin films was found to change with the variations of the carrier concentration because of the Burstein-Moss shifting effect. The variations in the optical band gap ( value of the GZO thin films were evaluated from the plots of , revealing that the measured value decreased with increasing deposition power. As compared with the results deposited at room temperature by Gong et al., (2010 the C deposited GZO thin films had apparent blue shift in the transmission spectrum and larger value. For the deposited GZO thin films, both the carrier concentration and mobility linearly decreased and the resistivity linearly increased with increasing deposition power. The prepared GZO thin films were also used as transparent electrodes to fabricate the amorphous silicon thin-film solar cells, and their properties were also measured.

  11. Photocatalytic activity of V doped ZnO nanoparticles thin films for the removal of 2- chlorophenol from the aquatic environment under natural sunlight exposure.

    Science.gov (United States)

    Salah, Numan; Hameed, A; Aslam, M; Babkair, Saeed S; Bahabri, F S

    2016-07-15

    Vanadium doped ZnO powders were used as precursors to deposit thin films of V(5+) incorporated ZnO nanoparticles on glass substrates by the pulsed laser deposition technique. The observed variations in Raman signals, visible region shift in the diffuse reflectance spectra along with a small shift in the (101) reflections of the X-ray diffraction (XRD) confirmed the insertion of V(5+) ions in ZnO lattice. No other additional reflection in the XRD results other than ZnO further endorsed the occupation of lattice positions by V entities rather than independent oxide formation. The asymmetric XPS peaks of Zn2p and V2p core levels confirmed the existence of both in the vicinity. The existence of minimal proportion of V(3+) along with V(5+) states varied the alteration of the oxidation states V in the synthetic route. The SEM images at various resolutions displayed the uniform distribution identical nanoparticles without the presence of additional phases in the deposited films. The SEM cross-section measurements revealed the uniform thickness of ∼90 nm of each film, whereas the surface studies of the films were performed by AFM. The as-synthesized films were tested for photocatalytic activity in sunlight illumination for the removal of 2-chlorophenol. The unique feature of the study was the estimation of the photocatalytic activity 20 ppm of 2-chlorophenol by exposing the low exposed area. The degradation of the substrate was measured by liquid phase UV-vis spectroscopy, whereas total organic carbon measurement revealed the mineralization of the substrate. The released Cl(-) ions were also measured by ion chromatography. The estimated flatband potentials and pHzpc values of the V doped materials, by Mott-Schottky analysis and zeta potential measurements respectively, were correlated with the photocatalytic activity. The kinetics of the photocatalytic degradation/mineralization process was estimated and results were correlated with the plausible mechanism. PMID

  12. Photocatalytic activity of V doped ZnO nanoparticles thin films for the removal of 2- chlorophenol from the aquatic environment under natural sunlight exposure.

    Science.gov (United States)

    Salah, Numan; Hameed, A; Aslam, M; Babkair, Saeed S; Bahabri, F S

    2016-07-15

    Vanadium doped ZnO powders were used as precursors to deposit thin films of V(5+) incorporated ZnO nanoparticles on glass substrates by the pulsed laser deposition technique. The observed variations in Raman signals, visible region shift in the diffuse reflectance spectra along with a small shift in the (101) reflections of the X-ray diffraction (XRD) confirmed the insertion of V(5+) ions in ZnO lattice. No other additional reflection in the XRD results other than ZnO further endorsed the occupation of lattice positions by V entities rather than independent oxide formation. The asymmetric XPS peaks of Zn2p and V2p core levels confirmed the existence of both in the vicinity. The existence of minimal proportion of V(3+) along with V(5+) states varied the alteration of the oxidation states V in the synthetic route. The SEM images at various resolutions displayed the uniform distribution identical nanoparticles without the presence of additional phases in the deposited films. The SEM cross-section measurements revealed the uniform thickness of ∼90 nm of each film, whereas the surface studies of the films were performed by AFM. The as-synthesized films were tested for photocatalytic activity in sunlight illumination for the removal of 2-chlorophenol. The unique feature of the study was the estimation of the photocatalytic activity 20 ppm of 2-chlorophenol by exposing the low exposed area. The degradation of the substrate was measured by liquid phase UV-vis spectroscopy, whereas total organic carbon measurement revealed the mineralization of the substrate. The released Cl(-) ions were also measured by ion chromatography. The estimated flatband potentials and pHzpc values of the V doped materials, by Mott-Schottky analysis and zeta potential measurements respectively, were correlated with the photocatalytic activity. The kinetics of the photocatalytic degradation/mineralization process was estimated and results were correlated with the plausible mechanism.

  13. Performance improvement of Sb2Te3 phase change material by Al doping

    International Nuclear Information System (INIS)

    Al doped Sb2Te3 material was proposed to improve the performance of phase-change memory. Crystallization temperature, activation energy, and electrical resistance of the Al doped Sb2Te3 films increase markedly with the increasing of Al concentration. The additional Al-Sb and Al-Te bonds enhance the amorphous thermal stability of the material. Al0.69Sb2Te3 material has a better data retention (10 years at 110 deg. C) than that of Ge2Sb2Te5 material (10 years at 87 deg. C). With a 100 ns width voltage pulse, SET and RESET voltages of 1.3 and 3.3 V are achieved for the Al0.69Sb2Te3 based device.

  14. Photoresponse and H2 gas sensing properties of highly oriented Al and Al/Sb doped ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    Hannane Benelmadjat; Boubekeur Boudine; Aissa Keffous; Noureddine Gabouze

    2013-01-01

    ZnO:Al and ZnO:Al/Sb thin films have been prepared and investigated. The thin films were deposited on Si substrates by the sol-gel method. The structural, optical and electrical properties of ZnO films have been investigated by spectrophotometry, ellipsometry, X-ray diffraction and current-voltage characterizations. It is found that the films exhibit wurtzite structure with a highly c-axis orientation perpendicular to the surface of the substrate, a high reflectivity in the infrared region and a response to illumination. Furthermore, it has been found that Si/(ZnO:Al/Sb)/Al photodiode is promising in photoconduction device while Si/(ZnO:Al)/Al can be used as gas sensor responding to the low H2 concentrations.

  15. Room temperature ferromagnetic properties of Al-doped bis(8-hydroxyquinoline)cobalt (Coq2) molecules

    International Nuclear Information System (INIS)

    Room temperature ferromagnetic properties were obtained in an originally paramagnetic molecule bis(8-hydroxyquinoline)cobalt (Coq2) by doping a nonmagnetic element aluminum. The Al-doped Coq2 films with the thicknesses of about 200 nm were prepared on Si substrates by co-evaporating pure Coq2 powders (99%) and Al wires (99%) simultaneously at a base pressure of 1.9×10−4 Pa. The magnetic properties of the films were measured at different temperatures by using a Quantum Design superconducting quantum interference device (SQUID). The obtained maximum coercive field is about 250 Oe at 300 K. The electronic structures of Al-doped Coq2 were studied by Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray absorption fine structure (XAFS) analysis. The FTIR and XPS spectra indicate that the doped Al atoms prefer to interact with N and O atoms in Coq2 molecules. XAFS analysis shows that the Coq2 molecule does not decompose during the co-evaporating process. The ferromagnetism of the film is attributed to the interactions between Al and N p states in lowest unoccupied molecular orbitals (LUMO). - Highlights: • Al-doped Coq2 films were deposited on Si substrates by thermal evaporation. • Room temperature ferromagnetism was obtained in the doped films. • FTIR and XPS spectra show that Al atoms react with N and O atoms of the Coq2 molecules

  16. Study of ytterbium doping effects on structural, mechanical and opto-thermal properties of sprayed ZnO thin films using the Boubaker Polynomials Expansion Scheme (BPES)

    Energy Technology Data Exchange (ETDEWEB)

    Amlouk, A. [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia); Boubaker, K., E-mail: mmbb11112000@yahoo.f [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia); Amlouk, M. [Unite de physique des dispositifs a semi-conducteurs, Faculte des sciences de Tunis, Universite de Tunis El Manar, 2092 Tunis (Tunisia); Bouhafs, M. [Unite de Recherche MA2I, Ecole Nationale d' Ingenieurs de Tunis, B.P. 37 Le Belvedere, 1002 Tunis (Tunisia)

    2009-10-19

    In this work, ZnO thin films have been grown on glass substrates by using a solution of propanol (C{sub 3}H{sub 8}O), water (H{sub 2}O) and zinc acetate (Z{sub n}(CH{sub 3}CO{sub 2}){sub 2}) in acidified medium (pH 5). The obtained films were n doped with ytterbium (Yb) at the rates of 100, 200 and 300 ppm. The structural features of the doped films were investigated using XRD, atomic force microscopy and scanning electronic microscopy techniques. XRD analysis shows a strong (0 0 2) X-ray diffraction line for increasing Yb-doping amounts. This c-axis preferential orientation of ZnO crystallites is naturally required to use this oxide as transparent conductor in optoelectronic applications. Atomic force microscopy (AFM) analysis shows an enhancement in the surface roughness of the doped ZnO:Yb thin films. Optical measurements were performed in 300-1800 nm domain via transmittance T(lambda) and reflectance R(lambda) spectra. Conjoint optical and thermal properties were deduced from the optical measurements in reference to the Amlouk-Boubaker opto-thermal expansivity psi{sub AB}. Optically relevant ytterbium doping effects have been discussed. Finally, mechanical measurements have been carried out using Vickers standard disposal. The results confirmed the structural and functional changes that several recent studies attributed to ytterbium doping.

  17. Growth, structural and optoelectronic properties tuning of nitrogen-doped ZnO thin films synthesized by means of reactive pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Naouar, M. [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650, Boulevard Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Photovoltaic laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia); Ka, I. [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650, Boulevard Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Gaidi, M., E-mail: mkaidi@sharjah.ac.ae [Department of Applied Physics, University of Sharjah, P.O. Box 27272, Sharjah (United Arab Emirates); Alawadhi, H. [Department of Applied Physics, University of Sharjah, P.O. Box 27272, Sharjah (United Arab Emirates); Bessais, B. [Photovoltaic laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif (Tunisia); Khakani, M.A.El, E-mail: elkhakani@emt.inrs.ca [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650, Boulevard Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada)

    2014-09-15

    Highlights: • PLD technique has been used to elaborate N doped ZnO. • A maximum incorporation of 0.7 at.% has been achieved at a pressure of 25 mTorr. • Increasing the N{sub 2} pressure decreases the nitrogen content with the creation of more defects. • Optical transmission and PL spectra have confirmed the band gap narrowing. - Abstract: Pulsed laser deposition has been successfully used to achieve in-situ nitrogen doping of zinc oxide thin films at a temperature as low as 300 °C. Nitrogen-doped zinc oxide (ZnO:N) thin films with a maximum nitrogen content of 0.7 at.% were obtained by varying the nitrogen background pressure in the range of 0–150 mTorr. The ZnO:N thin films were found to present hexagonal crystalline structure with dense and smooth surface. X-ray photoelectron spectroscopy analysis confirms the effective incorporation of nitrogen into ZnO thin films. Optical transmission together with room temperature photoluminescence measurements show that the band gap of the ZnO:N films shifts from 3.3 eV to 3.1 eV as nitrogen concentration varies in the range of 0.2–0.7 at.%. The narrower band gap is obtained at an optimal nitrogen concentration of 0.22 at.%. This band gap narrowing is found to be caused by both nitrogen incorporation and nitrogen-induced defects in the ZnO:N films.

  18. Dye-sensitized solar cell based on spray deposited ZnO thin film: Performance analysis through DFT approach

    Science.gov (United States)

    Parthiban, R.; Balamurugan, D.; Jeyaprakash, B. G.

    2015-02-01

    A dye-sensitized solar cell based on a spray deposited zinc oxide (ZnO) photoanode with Evans blue as a sensitizer was fabricated. Structural analysis confirms the hexagonal wurtzite phase of the ZnO photoanode with c-axis orientation. Surface morphology of the ZnO photoanode shows uniform distribution of spherically-shaped grains, ranging from 18 nm to 25 nm. The power conversion efficiency of the device was measured as 0.1%. Density functional theory was adopted to study the observed photovoltaic performance of the fabricated device. The analysis of the electronic properties of Evans blue dye showed that it has a pronounced effect on the observed device performance.

  19. Thin ZnO nanocomposite poly(styrene-acrylic acid) films on Si and SiO2 surfaces

    International Nuclear Information System (INIS)

    The properties and formation of self-assembled ZnO nanoclusters using polystyrene-based diblock copolymers are reported. The polystyrene-polyacrylic acid copolymer consisting of a majority block (polystyrene) and a minority block (polyacrylic acid) with a block number average molecular weight ratio of 16,500/4500 and a block repeat unit ratio of 159/63 was used in order to obtain self-assembly due to microphase separation with spherical morphology. The self-assembly of the inorganic nanoparticles was achieved at room temperature in the liquid phase using a ZnCl2 precursor dopant attached to the minority block, and both dry and wet chemical processing techniques compatible with semiconductor manufacturing were developed in order to convert the ZnCl2 precursor into ZnO. The polymer films were applied by standard spin-on photolithographic techniques on Si wafers with and without thermally grown SiO2 surface films. A study by X-ray photoelectron spectroscopy (XPS) confirmed the conversion of the ZnCl2 dopant precursor into ZnO within the copolymer matrix, and atomic force microscopy (AFM) showed the spherical morphology of the resultant ZnO nanoclusters. Conversion of the precursor into ZnO was achieved both by a wet chemical treatment and by developing a new dry chemical treatment process based on ozone exposure. The study showed that the dry treatment has better stability and shorter conversion exposure times on the Si surfaces than the wet treatment approach, resulting in lateral size distribution between 250 and 350 nm and height distribution between 80 and 130 nm for the ZnO nanoclusters

  20. “Synthesis and properties of Boron doped ZnO thin films by spray CVD technique at low substrate temperature”

    Directory of Open Access Journals (Sweden)

    Sunanda C. Yadav

    2012-12-01

    Full Text Available Intrinsic and nanocrystalline properties of Boron doped ZnO thin films were synthesized with a newly designed spray CVD technique from non-aqueous solution of Zinc acetate [Zn(CH3COOH2] as a precursor solution and Boric Acid as a doping solution. The major benefits of this technique are precise stoichiometry and its ability to deposit vapors on a large surface area with a high uniformity of thickness. The commercialization potential is enhanced by the low deposition temperature. In view for providing thin films as a Transparent Conducting Oxide (TCO for commercial application, the effect of dopant concentration from 0.2 at% to 1 at% in steps of 0.2 has been studied. The crystalline properties of these films have been investigated by X- ray diffraction (XRD technique. The results reveal hexagonal wurtzite structure indicating preferential orientation along caxis. Debye –Scherrer calculation indicate deteriorated crystallinity induced by Boron doping. The results are inwell agreement with surface morphology of film analyzed with Field Emission Scanning Micrographs and topography of films characterized with AFM. Moreover, the Boron doping enhances optoelectronic properties. The average optical transmittance of films increases with doping concentration showing maximum transparency for 0.8at% doping concentration (≈90%. The transmittance curve indicates interference fringe pattern between the wave fronts generated at the two interfaces (air and substrate. The extinction coefficient of the films is nearly equal to zero which suggests there is no absorption of light at grain boundary. Boron doping results blue shifted optical band gap resulted with reduced particle size. Nevertheless, refractive index and absorption edge of the ZnO films are similar to that of single crystal ZnO. The significant effect indicating enhanced electrical conductivity of the ZnO film is observed for the optimized B dopant concentration (0.8 at %. The films obtained at

  1. Hydrothermal Growth of Quasi-Monocrystal ZnO Thin Films and Their Application in Ultraviolet Photodetectors

    Directory of Open Access Journals (Sweden)

    Yung-Chun Tu

    2015-01-01

    Full Text Available Quasi-monocrystal ZnO film grown using the hydrothermal growth method is used for the fabrication of Cu2O/ZnO heterojunction (HJ ultraviolet photodetectors (UV-PDs. The HJ was formed via the sputtering deposition of p-type Cu2O onto hydrothermally grown ZnO film (HTG-ZnO-film. The effect of annealing temperature in the nitrogen ambient on the photoluminescence spectra of the synthesized ZnO film was studied. The optoelectronic properties of Cu2O/ZnO film with various Cu2O thicknesses (250–750 nm under UV light (365 nm; intensity: 3 mW/cm2 were determined. The UV sensitivity of the HTG-ZnO-film-based UV-PDs and the sputtered ZnO-film-based UV-PDs were 55.6-fold (SHTG and 8.8-fold (Ssputter, respectively. The significant gain in sensitivity (SHTG/Ssputter = 630% of the proposed ZnO-film-based device compared to that for the device based on sputtered film can be attributed to the improved photoelectric properties of quasi-monocrystal ZnO film.

  2. Influence of film thickness and oxygen partial pressure on cation-defect-induced intrinsic ferromagnetic behavior in luminescent p-type Na-doped ZnO thin films.

    Science.gov (United States)

    Ghosh, S; Khan, Gobinda Gopal; Varma, Shikha; Mandal, K

    2013-04-10

    In this article, we have investigated the effect of oxygen partial pressure (PO2) and film thickness on defect-induced room-temperature (RT) ferromagnetism (FM) of highly c-axis orientated p-type Na-doped ZnO thin films fabricated by pulse laser deposition (PLD) technique. We have found that the substitution of Na at Zn site (NaZn) can be effective to stabilize intrinsic ferromagnetic (FM) ordering in ZnO thin films with Curie temperature (TC) as high as 509 K. The saturation magnetization (MS) is found to decrease gradually with the increase in thickness of the films, whereas an increase in "MS" is observed with the increase in PO2 of the PLD chamber. The enhancement of ferromagnetic signature with increasing PO2 excludes the possibility of oxygen vacancy (VO) defects for the magnetic origin in Na-doped ZnO films. On the other hand, remarkable enhancement in the green emission (IG) are observed in the photoluminescence (PL) spectroscopic measurements due to Na-doping and that indicates the stabilization of considerable amount of Zn vacancy (VZn)-type defects in Na-doped ZnO films. Correlating the results of PL and X-ray photoelectron spectroscopy (XPS) studies with magnetic measurements we have found that VZn and Na substitutional (NaZn) defects are responsible for the hole-mediated FM in Na-doped ZnO films, which might be an effective candidate for modern spintronic technology. PMID:23461478

  3. Effect of Sn Doping on the Properties of Nano-Structured ZnO Thin Films Deposited by Co-Sputtering Technique.

    Science.gov (United States)

    Islam, M A; Rahman, K S; Haque, F; Khan, N A; Akhtaruzzaman, M; Alam, M M; Ruslan, H; Sopian, K; Amin, N

    2015-11-01

    In this study, tin doped zinc oxide (ZnO:Sn) nano-structured thin films were successfully deposited by co-sputtering of ZnO and Sn on top of glass substrate. The effect of Sn doping on the microstructure, phase, morphology, optical and electrical properties of the films were extensively investigated by means of XRD, EDX, SEM, AFM, Hall Effect measurement, and UV-Vis spectrometry. The results showed that the undoped ZnO film exhibited preferred orientation along the c-axis of the hexagonal wurtzite structure. With increase of Sn doping, the peak position of the (002) plane was shifted to the higher 20 values, and ultimately changed to amorphous structure. The absorption edge was shifted to blue region which confirmed the excitonic quantum confinement effect in the films. Consequently, improved surface morphology with optical bandgap, reduced average particle size, reduced resistivity, enhanced Hall mobility and carrier concentration were observed in the doped films after vacuum annealing. Among all of the as-deposited and annealed ZnO:Sn films investigated in this study, annealed film doped with 8 at.% of Sn concentration exhibited the best properties with a bandgap of 3.84 eV, RMS roughness of 2.51 nm, resistivity of 2.36 ohm-cm, and Hall mobility of 83 cm2 V(-1) s(-1).

  4. High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires

    Institute of Scientific and Technical Information of China (English)

    Zhi Tao; Zichen Zhang; Yi-an Huang; Xiang Liu; Jing Chen; Wei Lei; Xiaofeng Wang; Lingfeng Pan; Jiangyong Pan; Qianqian Huang

    2016-01-01

    In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of CdSe quantum dots and reduced graphene oxide (RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 A W-1 and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.

  5. Sonicated sol–gel preparation of nanoparticulate ZnO thin films with various deposition speeds: The highly preferred c-axis (0 0 2) orientation enhances the final properties

    Energy Technology Data Exchange (ETDEWEB)

    Malek, M.F., E-mail: firz_solarzelle@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M.H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Khusaimi, Z. [NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia); Sahdan, M.Z. [Microelectronic and Nanotechnology Centre (MiNT), Universiti Tun Hussein Onn Malaysia (UTHM), 86400 Batu Pahat, Johor (Malaysia); Musa, M.Z. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Zainun, A.R. [Faculty of Electrical and Electronics Engineering, Universiti Malaysia Pahang (UMP), Lebuhraya Tun Razak, 26300 Kuantan, Pahang (Malaysia); Suriani, A.B. [Department of Physics, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris, 35900 Tanjung Malim, Perak (Malaysia); Md Sin, N.D. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Abd Hamid, S.B. [Nanotechnology and Catalysis Research Centre (NANOCAT), Universiti Malaya (UM), 50603 Kuala Lumpur (Malaysia); Rusop, M. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2014-01-05

    Highlights: • Minimum stress of highly c-axis oriented ZnO was grown at suitable deposition speed. • The ZnO crystal orientation was influenced by strain/stress of the film. • Minimum stress/strain of ZnO film leads to lower defects. • Bandgap and defects were closely intertwined with strain/stress. • We report additional optical and electrical properties based on deposition speed. -- Abstract: Zinc oxide (ZnO) thin films have been deposited onto glass substrates at various deposition speeds by a sonicated sol–gel dip-coating technique. This work studies the effects of deposition speed on the crystallisation behaviour and optical and electrical properties of the resulting films. X-ray diffraction (XRD) analysis showed that thin films were preferentially oriented along the (0 0 2) c-axis direction of the crystal. The transformation sequence of strain and stress effects in ZnO thin films has also been studied. The films deposited at a low deposition speed exhibited a large compressive stress of 0.78 GPa, which decreased to 0.43 GPa as the deposition speed increased to 40 mm/min. Interestingly, the enhancement in the crystallinity of these films led to a significant reduction in compressive stress. All films exhibited an average transmittance of greater than 90% in the visible region, with absorption edges at ∼380 nm. The photoluminescence (PL) measurements indicated that the intensity of the emission peaks varied significantly with deposition speed. The optical band gap energy (E{sub g}) was evaluated as 3.276–3.289 eV, which increased with decreasing compressive stress along the c-axis. The energy band gap of the resulting ZnO films was found to be strongly influenced by the preferred c-axis (0 0 2) orientation.

  6. Dielectric function of very thin nano-granular ZnO layers with different states of growth.

    Science.gov (United States)

    Gilliot, Mickaël; Hadjadj, Aomar; En Naciri, Aotmane

    2015-04-01

    Zinc oxide (ZnO) layers consisting of grains closely packed together are grown using a solgel synthesis and spin-coating deposition process. The morphologies are characterized by atomic force microscopy and X-ray diffraction, and their optical properties are investigated by spectroscopic ellipsometry at the different stages of the growth process. The optical observations are correlated with evolution of morphology and orientation. Two remarkable evolutions are observed: gradual evolution of morphology, crystallinity, and excitonic contribution with the first deposition steps; and transformation from a poorly oriented to a c-axis oriented crystalline state featuring a large contribution of bound excitons after thermal annealing. A modified Elliott model is used to obtain the optical parameters of ZnO, including bandgap and exciton energies. A simple growth mechanism is proposed to explain the evolution of the layers in accordance with the different deposition steps. PMID:25967220

  7. Development of flexible ZnO thin film surface acoustic wave strain sensors on ultrathin glass substrates

    International Nuclear Information System (INIS)

    Flexible surface acoustic wave (SAW) strain sensors made on ZnO/ultrathin glass (100 μm) substrates have been developed. The sensitivity of the SAW strain sensors under different strain angles and annealing temperatures, as well as the mechanical stability, are investigated. It was shown that the thickness of ZnO has a strong effect on the sensitivity of the strain sensors, and thicker ZnO makes sensors with better performance. Thermal annealing at a temperature up to 200 °C also improves the sensitivity of the strain sensor significantly. The temperature coefficient of frequency remains unchanged under different strains, showing good thermal stability. A cyclic bending test with the strain varied between zero and 2000 με exhibits good mechanical stability and reliability of SAW strain sensors. All the results demonstrate the great potential of flexible SAW strain sensors for flexible electronic applications. (paper)

  8. Dielectric function of very thin nano-granular ZnO layers with different states of growth.

    Science.gov (United States)

    Gilliot, Mickaël; Hadjadj, Aomar; En Naciri, Aotmane

    2015-04-01

    Zinc oxide (ZnO) layers consisting of grains closely packed together are grown using a solgel synthesis and spin-coating deposition process. The morphologies are characterized by atomic force microscopy and X-ray diffraction, and their optical properties are investigated by spectroscopic ellipsometry at the different stages of the growth process. The optical observations are correlated with evolution of morphology and orientation. Two remarkable evolutions are observed: gradual evolution of morphology, crystallinity, and excitonic contribution with the first deposition steps; and transformation from a poorly oriented to a c-axis oriented crystalline state featuring a large contribution of bound excitons after thermal annealing. A modified Elliott model is used to obtain the optical parameters of ZnO, including bandgap and exciton energies. A simple growth mechanism is proposed to explain the evolution of the layers in accordance with the different deposition steps.

  9. Fabrication and photoluminescence of Er-doped ZnO thin films on SiO2/Si substrate by pulsed laser deposition

    Institute of Scientific and Technical Information of China (English)

    GU Xiuquan; ZHU Liping; YE Zhizhen; HE Haiping; ZHAO Binghui

    2006-01-01

    Er doped ZnO thin films were grown on Si substrates using SiO2 buffer layer by pulsed laser deposition (PLD) method.The obtained films crystallize well and show high c-axis orientation.The Er content was evidently detected by the energy dispersive X-ray spectroscopy (EDS).Upon annealing in O2 ambience at different temperatures, the films show different photoluminescence properties at 1.54 μm.The samples annealed at 700 and 850 ℃ show intense photoluminescence peaks which enhance with the annealing temperature, while no obvious luminescence peaks are observed for the as-grown samples or annealed at 500 ℃.The possible mechanism was discussed.

  10. Effect of post-thermal annealing on the structural and optical properties of ZnO thin films prepared from a polymer precursor

    Institute of Scientific and Technical Information of China (English)

    Jijoy.P.Mathew; George Varghese; Jacob Mathew

    2012-01-01

    ZnO thin films were synthesised by a new method which uses polyvinyl alcohol (PVA) as the polymer precursor.The films are annealed at different temperatures and for different annealing times.The structurai parameters,like grain size,lattice constants,optical band gap,and Urbach energy,depend on the annealing temperature and time.All the films possess tensile strain,which relaxes as the annealing temperature and time increase.The photoluminescence (PL) spectra contain only ultraviolet (UV) peaks at low temperature,but as the annealing temperature and time increase,we observe peaks at the blue and green regions with a variation in the intensities of these peaks with annealing temperature and time.

  11. Effect of Additives on Grain Size and Ammonia Sensing Properties of Sprayed Pure and CuO Modified ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    L.A. Patil

    2011-01-01

    Full Text Available Nanocrystalline pure and CuO doped ZnO thin films were prepared using spray pyrolysis technique. The zinc nitrate (0.1 M and copper chloride (0.1 M were used as starting precursor. These films were characterized by XRD, SEM and EDAX to observe structural, microstructural properties and elemental analysis respectively. It is observed that the average grain size was found to decrease from 190 to 90 nm, as the doping wt % of copper chloride in zinc nitrate solution goes on increasing. The sensing performances of pure and doped films were tested. The sensitivity goes on increasing with decreases in grain size (increase of copper chloride in zinc nitate solution. The maximum sensitivity of S = 35 at 400 °C was found for films prepared from 10 wt % of copper chloride.

  12. Doping effect on SILAR synthesized crystalline nanostructured Cu-doped ZnO thin films grown on indium tin oxide (ITO) coated glass substrates and its characterization

    Science.gov (United States)

    Dhaygude, H. D.; Shinde, S. K.; Velhal, Ninad B.; Takale, M. V.; Fulari, V. J.

    2016-08-01

    In the present study, a novel chemical route is used to synthesize the undoped and Cu-doped ZnO thin films in aqueous solution by successive ionic layer adsorption and reaction (SILAR) method. The synthesized thin films are characterized by x-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive x-ray analysis (EDAX), contact angle goniometer and UV-Vis spectroscopic techniques. XRD study shows that the prepared films are polycrystalline in nature with hexagonal crystal structure. The change in morphology for different doping is observed in the studies of FE-SEM. EDAX spectrum shows that the thin films consist of zinc, copper and oxygen elements. Contact angle goniometer is used to measure the contact angle between a liquid and a solid interface and after detection, the nature of the films is initiated from hydrophobic to hydrophilic. The optical band gap energy for direct allowed transition ranging between 1.60-2.91 eV is observed.

  13. Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2015-01-01

    Full Text Available Transparent conducting titanium-doped zinc oxide (TZO thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2 flow ratios (RH and substrate temperatures (TS. The optimal RH value for achieving high conducting TZO:H thin film decreased from 10% to 1% when TS increased from RT to 300°C. The lowest resistivity of 9.2×10-4 Ω-cm was obtained as TS=100°C and RH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002 direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasing RH. The average visible transmittance decreased with increasing RH for the RT-deposited film, while it had not considerably changed with different RH for the 300°C-deposited films. The optical bandgap increased as RH increased, which is consistent with the Burstein-Moss effect. The figure of merits indicated that TS=100°C and RH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

  14. Influence of growth temperature on morphological, structural and photoluminescence properties of ZnO nanostructure thin layers and powders deposited by thermal evaporation

    Indian Academy of Sciences (India)

    Yaser Arjmand; Hosein Eshghi

    2014-12-01

    Zinc oxide (ZnO) nanostructures were grown as thin films on the p-silicon (100) wafer and also in the form of powder inside the boat by heating (550–950 °C) zinc powder in the presence of oxygen without any catalyst or additives, using the thermal evaporation method. The field-emission scanning electron microscopy images, as well as energy-dispersive X-ray spectroscopy and X-ray diffraction spectra, indicate that although the grown samples are covered with various nanostructure shapes, such as nanowires, nanorods, flower-like nanostructures andmicrocages, all have a reasonable stoichiometric composition in the polycrystalline wurtzite phase along (002) in the thin layer samples and along (101) in the powder samples within the boat. The room-temperature photoluminescence spectra of the thin layer samples revealed not only the ultraviolet (UV) emission blue shift of the samples with an increase in the growth temperature, but also found that the emission intensity ratio of UV/visible (∼510 nm) has a maximum and minimum, corresponding to that grown at 750 and 950 °C, respectively.

  15. Doping effect on SILAR synthesized crystalline nanostructured Cu-doped ZnO thin films grown on indium tin oxide (ITO) coated glass substrates and its characterization

    Science.gov (United States)

    Dhaygude, H. D.; Shinde, S. K.; Velhal, Ninad B.; Takale, M. V.; Fulari, V. J.

    2016-08-01

    In the present study, a novel chemical route is used to synthesize the undoped and Cu-doped ZnO thin films in aqueous solution by successive ionic layer adsorption and reaction (SILAR) method. The synthesized thin films are characterized by x-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive x-ray analysis (EDAX), contact angle goniometer and UV–Vis spectroscopic techniques. XRD study shows that the prepared films are polycrystalline in nature with hexagonal crystal structure. The change in morphology for different doping is observed in the studies of FE-SEM. EDAX spectrum shows that the thin films consist of zinc, copper and oxygen elements. Contact angle goniometer is used to measure the contact angle between a liquid and a solid interface and after detection, the nature of the films is initiated from hydrophobic to hydrophilic. The optical band gap energy for direct allowed transition ranging between 1.60–2.91 eV is observed.

  16. Growth stimulation of Bacillus cereus and Pseudomonas putida using nanostructured ZnO thin film as transducer element

    Energy Technology Data Exchange (ETDEWEB)

    Loukanov, Alexandre, E-mail: loukanov@mail.saitama-u.ac.jp [Saitama University, Department of Chemistry, Faculty of Science (Japan); Filipov, Chavdar [University of Forestry, Department of Infectious pathology, hygiene, technology and control of food stuffs of animal origin, Faculty of Veterinary Medicine (Bulgaria); Valcheva, Violeta [Bulgarian Academy of Science, Department of Infectious Diseases, Institute of microbiology (Bulgaria); Lecheva, Marta [University of Mining and Geology “St. Ivan Rilski”, Laboratory of Engineering NanoBiotechnology, Department of Engineering Geoecology (Bulgaria); Emin, Saim [University of Nova Gorica, Materials Research Laboratory (Slovenia)

    2015-04-15

    The semiconductor zinc oxide nanomaterial (ZnO or ZnO:H) is widely used in advanced biosensor technology for the design of highly-sensitive detector elements for various applications. In the attempt to evaluate its effect on common microorganisms, two types of nanostructured transducer films have been used (average diameter 600–1000 nm). They have been prepared by using both wet sol–gel method and magnetron sputtering. Their polycrystalline structure and specific surface features have been analyzed by X-ray diffraction (XRD), scanning electron microscope, and atomic force microscope. The assessment of growth stimulation of bacteria was determined using epifluorescent microscope by cell staining with Live/Dead BacLight kit. In our experiments, the growth stimulation of Gram-positive and Gram-negative bacteria on nanostructured ZnO film is demonstrated by Bacillus cereus and Pseudomonas putida. These two bacterial species have been selected, because they are well known and studied in biosensor technologies, with structural difference of their cell walls. These pathogens are easy for with common source in the liquid food or some commercial products. Our data has revealed that the method of transducer film preparation influences strongly bacterial inhibition and division. These results present the transforming signal precisely, when ZnO is used in biosensor applications.