WorldWideScience

Sample records for al-doped zno thin

  1. Atomic layer deposition of Al-doped ZnO thin films

    International Nuclear Information System (INIS)

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro

    2013-01-01

    Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al 2 O 3 on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al 2 O 3 phase and no further carrier doping of ZnO is observed.

  2. Al-doped and in-doped ZnO thin films in heterojunctions with silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chabane, L.; Zebbar, N.; Kechouane, M. [LCMS, Faculty of Physics, University of Sciences and Technology (USTHB), BP 32-16111, Algiers (Algeria); Aida, M.S. [LCMet Interface, Faculty of Sciences, University of Constantine, 25000 (Algeria); Trari, M. [Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry (USTHB), BP 32-16111 Algiers (Algeria)

    2016-04-30

    The undoped, Al-doped and In-doped ZnO thin films were deposited by ultrasonic spray pyrolysis technique, onto glass and p-Si substrates and the physical properties of the films were investigated. The X-ray diffraction, optical analysis and electrical characterisations, indicate that the films were polycrystalline with hexagonal würtzite type structure and revealed that the aluminium doping deteriorates the crystalline and optical properties and enhances the electrical conductivity whereas indium doping improves all properties. The transport mechanism controlling the conduction through the heterojunctions was studied. For the heterostructures, the temperature dependent current–voltage characteristics showed rectifying behaviour in the dark, but current transport mechanism is not the same for all heterojunctions. Therefore, the presence of the interface states and volume defects are identified as limiting factors for obtaining a high quality heterojunction interface. - Highlights: • Al-doped and In-doped ZnO thin films have been deposited onto Si. • In-doped ZnO/p-Si heterojunction showed poor rectifying behaviour. • Al-doped ZnO/p-Si heterojunction showed a good rectifying at room temperature. • The carriers transport mechanisms was controlled by interfacial and volume defects.

  3. Structural, optical, and LED characteristics of ZnO and Al doped ZnO thin films

    Science.gov (United States)

    Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2017-05-01

    ZnO (pristine) and Al doped ZnO (AZO) films were prepared using sol-gel spin coating method. The XRD analysis showed the enhanced compressive stress in AZO film. The presence of extended states below the conduction band edge in AZO accounts for the redshift in optical bandgap. The PL spectra of AZO showed significant blue emission due to the carrier recombination from defect states. The TRPL curves showed the dominant DAP recombination in ZnO film, whereas defect related recombination in Al doped ZnO film. Color parameters viz: the dominant wavelength, color coordinates (x,y), color purity, luminous efficiency and correlated color temperature (CCT) of ZnO and AZO films are calculated using 1931 (CIE) diagram. Further, a strong blue emission with color purity more than 96% is observed in both the films. The enhanced blue emission in AZO significantly increased the luminous efficiency (22.8%) compared to ZnO film (10.8%). The prepared films may be used as blue phosphors in white light generation.

  4. Enhancement of the Ultraviolet Photoresponsivity of Al-doped ZnO Thin Films Prepared by using the Sol-gel Spin-coating Method

    Science.gov (United States)

    Lee, Wookbin; Leem, Jae-Young

    2018-03-01

    We report the structural, morphological, optical, and ultraviolet (UV) photoresponse properties of Al-doped ZnO (AZO) thin films prepared on silicon substrates with different Al doping concentrations by using the sol-gel spin-coating method. An analysis of the X-ray diffraction patterns of the AZO thin films revealed that the average grain size decreased and the c-axis lattice constant increased with Al content. The field-emission scanning electron microscopy images showed that with Al doping, the grain size decreased, but the film density increased with increasing Al doping concentration from 0% to 3%. These results indicate that the surface area of the film increased with increasing Al doping. The absorbance spectra revealed that the UV absorbance of the AZO thin films increased with increasing Al doping concentration and that the absorption onset shifted towards lower energies. The photoluminescence spectra revealed that with increasing Al doping, the intensity of the visible emission greatly decreased and the visible emission peak shifted forward lower energy (a red shift). The UV sensor based on the AZO thin films exhibited a higher responsivity than that based on the undoped ZnO thin film. Therefore, this study provides a facile method for improving the photoresponsivity of UV sensors.

  5. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    International Nuclear Information System (INIS)

    Shafura, A. K.; Azhar, N. E. I.; Uzer, M.; Mamat, M. H.; Sin, N. D. Md.; Saurdi, I.; Shuhaimi, A.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-01-01

    CH 4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10 −3 S/cm and 11.5%, respectively.

  6. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Shafura, A. K., E-mail: shafura@ymail.com; Azhar, N. E. I.; Uzer, M.; Mamat, M. H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Sin, N. D. Md. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor (Malaysia); Saurdi, I. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Sarawak, Kampus Kota Samarahan Jalan Meranek, Sarawak (Malaysia); Shuhaimi, A. [Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University ofMalaya, 50603 Kuala Lumpur (Malaysia); Alrokayan, Salman A. H.; Khan, Haseeb A. [Research Chair of Targeting and Treatment Cancer Using Nanoparticles, Department Of Biochemistry, College Of Science, King Saud University, P.O: 2454 Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: nanouitm@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    CH{sub 4} gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10{sup −3} S/cm and 11.5%, respectively.

  7. Effect of Al doping on performance of ZnO thin film transistors

    Science.gov (United States)

    Dong, Junchen; Han, Dedong; Li, Huijin; Yu, Wen; Zhang, Shendong; Zhang, Xing; Wang, Yi

    2018-03-01

    In this work, we investigate the Aluminum-doped Zinc Oxide (AZO) thin films and their feasibility as the active layer for thin film transistors (TFTs). A comparison on performance is made between the AZO TFTs and ZnO TFTs. The electrical properties such as saturation mobility, subthreshold swing, and on-to-off current ratio are improved when AZO is utilized as the active layer. Oxygen component of the thin film materials indicates that Al is the suppressor for oxygen defect in active layer, which improves the subthreshold swing. Moreover, based on band structure analyzation, we observe that the carrier concentration of AZO is higher than ZnO, leading to the enhancement of saturation mobility. The microstructure of the thin films convey that the AZO films exhibit much smaller grain boundaries than ZnO films, which results in the lower off-state current and higher on-to-off current ratio of AZO TFTs. The AZO thin films show huge potential to be the active layer of TFTs.

  8. X-ray photoelectron spectroscopy study and thermoelectric properties of Al-doped ZnO thin films

    International Nuclear Information System (INIS)

    Li Li; Fang Liang; Zhou Xianju; Liu Ziyi; Zhao Liang; Jiang Sha

    2009-01-01

    In this paper, high quality Al-doped ZnO (AZO) thin films were prepared by direct current (DC) reactive magnetron sputtering using a Zn target (99.99%) containing Al of 1.5 wt.%. The films obtained were characterized by X-ray photoelectron spectroscopy (XPS) and thermoelectric measurements. The XPS results reveal that Zn and Al exist only in oxidized state, while there are dominant crystal lattice and rare adsorbed oxygen for O in the annealed AZO thin films. The studies of thermoelectric property show a striking thermoelectric effect in the AZO thin films. On the one hand, the thermoelectromotive and magnetothermoelectromotive forces increase linearly with increasing temperature difference (ΔT). On the other hand, the thermoelectric power (TEP) decreases with the electrical resistance of the sample. But the TEP increases with the increase of temperature below 300 K, and it nearly does not change around room temperature. The experimental results also demonstrate that the annealing treatment increases TEP, while the external magnetic field degrades TEP.

  9. The effect of Al-doping on the structural, optical, electrical and cathodoluminescence properties of ZnO thin films prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Dghoughi, L. [Laboratoire d' Optoelectronique et de physico-chimie des Materiaux, Faculte des Sciences, Universite Ibn Tofail, Kenitra (Morocco); Ouachtari, F., E-mail: fouad489ou@gmail.co [Laboratoire de Physique Matiere et Rayonnement, Equipe de Spectroscopie Optique de la Matiere Solide, Faculte des Sciences, Universite Ibn Tofail, Kenitra (Morocco); Addou, M. [Laboratoire d' Optoelectronique et de physico-chimie des Materiaux, Faculte des Sciences, Universite Ibn Tofail, Kenitra (Morocco); Elidrissi, B.; Erguig, H.; Rmili, A.; Bouaoud, A. [Laboratoire de Physique Matiere et Rayonnement, Equipe de Spectroscopie Optique de la Matiere Solide, Faculte des Sciences, Universite Ibn Tofail, Kenitra (Morocco)

    2010-05-01

    Aluminum doped zinc oxide (Al-doped ZnO) thin films were deposited by the spray pyrolysis technique onto the glass substrates at 450 deg. C using anhydrous zinc chloride (ZnCl{sub 2}) and aluminum chloride (AlCl{sub 3}) as sources of zinc and aluminum ions, respectively. The effect of [Al]/[Zn] ratio in the solution on the structural, optical, electrical and cathodoluminescence properties of these films were investigated. XRD study revealed that both undoped and Al-doped ZnO films were polycrystalline with hexagonal structure and exhibited (0 0 2) preferential orientation. The optical and electrical studies showed that the film deposited with the [Al]/[Zn] ratio equal to 0.05 had high transmittance (of about 80% and 95% in the visible and near infra-red regions, respectively) and minimum resistivity of 1.4x10{sup -3} OMEGA cm, respectively. This resistivity value decreased with increase in temperature indicating the semiconducting nature of Al-doped ZnO films. The chemical composition analysis (EPMA) showed that this film was nearly stochiometric with a slight oxygen deficiency.

  10. Studies on morphology, electrical and optical characteristics of Al-doped ZnO thin films grown by atomic layer deposition

    Science.gov (United States)

    Chen, Li; Chen, Xinliang; Zhou, Zhongxin; Guo, Sheng; Zhao, Ying; Zhang, Xiaodan

    2018-03-01

    Al doped ZnO (AZO) films deposited on glass substrates through the atomic layer deposition (ALD) technique are investigated with various temperatures from 100 to 250 °C and different Zn : Al cycle ratios from 20 : 0 to 20 : 3. Surface morphology, structure, optical and electrical properties of obtained AZO films are studied in detail. The Al composition of the AZO films is varied by controlling the ratio of Zn : Al. We achieve an excellent AZO thin film with a resistivity of 2.14 × 10‑3 Ω·cm and high optical transmittance deposited at 150 °C with 20 : 2 Zn : Al cycle ratio. This kind of AZO thin films exhibit great potential for optoelectronics device application. Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707) and the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900).

  11. Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

    Science.gov (United States)

    Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

    2018-04-01

    In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

  12. On the deactivation of the dopant and electronic structure in reactively sputtered transparent Al-doped ZnO thin films

    International Nuclear Information System (INIS)

    Horwat, David; Jullien, Maud; Capon, Fabien; Pierson, Jean-Francois; Andersson, Joakim; Endrino, Jose Luis

    2010-01-01

    We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L 3 and Al K edge x-ray absorption near-edge structure that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al 2 O 3 (ZnO) m homologous phase that degrades the electrical conductivity. (fast track communication)

  13. Controlling the surface nanostructure of ZnO and Al-doped ZnO thin films using electrostatic spraying for their application in 12% efficient perovskite solar cells

    Science.gov (United States)

    Mahmood, Khalid; Swain, Bhabani Sankar; Jung, Hyun Suk

    2014-07-01

    In this paper, ZnO and Al-doped ZnO films were deposited using the electrospraying method and studied for the first time as photoanodes for efficient perovskite solar cells. Effects of substrate temperature, deposition time, applied voltage, substrate-to-nozzle distance and flow rate (droplet size) on the morphology of ZnO were studied with the help of FE-SEM images. The major factors such as the droplet size of the spray, substrate temperature and substrate-to-nozzle distance at deposition control the film morphology. Indeed, these factors determine the density of the film, its smoothness and the flow of solution over the substrate. The droplet size was controlled by the flow rate of the spray. The substrate-to-nozzle distance and flow rate will both regulate the solution amount deposited on the surface of the substrate. The most favorable conditions for a good quality ZnO thin film were a long substrate-to-nozzle distance and lower solution flow rates. In situ droplet size measurement shows that the size and dispersion of particles were narrowed. The method was shown to have a high deposition rate and efficiency relative to well-established thin film deposition techniques such as chemical and physical vapor deposition. In addition, it also allows easy control of the microstructure and stoichiometry of the deposits. The pure ZnO film produced under optimum conditions (440 nm thick) demonstrated a high power conversion efficiency (PCE) of 10.8% when used as a photoanode for perovskite solar cells, owing to its high porosity, uniform morphology and efficient electron transport. For thicker films a drastic decrease in PCE was observed due to their low porosity. We also observed that the open-circuit voltage increases from 1010 mV to 1045 mV and also the PCE increases from 10.8% to 12.0% when pure ZnO films were doped with aluminum (Al). Under atmospheric pressure, the electrospraying system produces the reasonably uniform-sized droplets of smaller size, so the films

  14. Influence Al doped ZnO nanostructure on structural and optical properties

    International Nuclear Information System (INIS)

    Ramelan, Ari Handono; Wahyuningsih, Sayekti; Chasanah, Uswatul; Munawaroh, Hanik

    2016-01-01

    The preparation of Al-doped ZnO (AZO) thin films prepared by the spin-coating method was reported. Preparation of AZO was conducted by annealing treatment at a temperature of 700°C. While the spin-coating process of AZO thin films were done at 2000 and 3000 rpm respectively. The structural properties of ZnO were determined by X- ray diffraction (XRD) analysis. ZnOnanostructure was formed after annealed at atemperature of 400°C.The morphology of ZnO was determined by Scanning Electron Microscopy (SEM) showed the irregular morphology about 30-50µm in size. Al doped on ZnO influenced the optical properties of those material. Increasing Al contain on ZnO cause of shifting to the lower wavelength. The optical properties of the ZnO as well as AZO films showed that higher reflectance on the ultraviolet region so those materials were used as anti-reflecting agent.Al addition significantly enhance the optical transparency and induce the blue-shift in optical bandgap of ZnO films.

  15. Nanostructure of aluminium (Al) - Doped zinc oxide (AZO) thin films

    Science.gov (United States)

    Hussin, Rosniza; Husin, M. Asri

    2017-12-01

    Aluminium (Al)-doped Zinc Oxide (ZnO) was deposited on glass substrates by using the sol-gel dip coating technique. Next, AZO sol-gel solution was produced via sol-gel method. Al was used as doped element with molar ratios of 1%, 2%, and 3%, while the calcination temperatures were set at 400°C, 500°C, and 600°C for 2 hours. In fact, characterization was carried out in order to determine the effect of calcination temperature and molar ratio of doping by using several techniques, such as X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FESEM), and Ultraviolet-Visible spectroscopy (UV-Vis). XRD was performed to investigate the crystal structure in which the ZnO was in wurtzite hexagonal form. Next, Energy Dispersive Spectroscopy (EDS) was used to determine the composition of thin films where the result revealed the existence of zinc, oxygen, and aluminium. The roughness of the deposited film was later measured by using the AFM approach where the findings indicated increment in RMS from 8.496 nm to 35.883 nm as the temperature was increased. Additionally, FESEM was carried out to look into the microstructure surfaces of the deposited AZO thin film for increased temperature caused the particle to grow bigger for all molar ratio of dopant. Lastly, UV-Vis was conducted to study the optical properties of AZO, in which the result demonstrated that AZO thin film possessed the highest transmittance percentage among all samples above 90% with band gap value that ranged from 3.25 eV to 3.32 eV.

  16. Spatial structure of radio frequency ring-shaped magnetized discharge sputtering plasma using two facing ZnO/Al2O3 cylindrical targets for Al-doped ZnO thin film preparation

    Directory of Open Access Journals (Sweden)

    Takashi Sumiyama

    2017-05-01

    Full Text Available Spatial structure of high-density radio frequency ring-shaped magnetized discharge plasma sputtering with two facing ZnO/Al2O3 cylindrical targets mounted in ring-shaped hollow cathode has been measured and Al-doped ZnO (AZO thin film is deposited without substrate heating. The plasma density has a peak at ring-shaped hollow trench near the cathode. The radial profile becomes uniform with increasing the distance from the target cathode. A low ion current flowing to the substrate of 0.19 mA/cm2 is attained. Large area AZO films with a resistivity of 4.1 – 6.7×10-4 Ω cm can be prepared at a substrate room temperature. The transmittance is 84.5 % in a visible region. The surface roughnesses of AZO films are 0.86, 0.68, 0.64, 1.7 nm at radial positions of r = 0, 15, 30, 40 mm, respectively, while diffraction peak of AZO films is 34.26°. The grains exhibit a preferential orientation along (002 axis.

  17. Effect of thickness on structural and electrical properties of Al-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Arce, R.D.; Schmidt, J.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2015-01-01

    In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness.

  18. Effect of thickness on structural and electrical properties of Al-doped ZnO films

    International Nuclear Information System (INIS)

    Garcés, F.A.; Budini, N.; Arce, R.D.; Schmidt, J.A.

    2015-01-01

    In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness

  19. Temperature dependent dual hydrogen sensor response of Pd nanoparticle decorated Al doped ZnO surfaces

    Science.gov (United States)

    Gupta, D.; Dutta, D.; Kumar, M.; Barman, P. B.; Som, T.; Hazra, S. K.

    2015-10-01

    Sputter deposited Al doped ZnO (AZO) thin films exhibit a dual hydrogen sensing response in the temperature range 40 °C-150 °C after surface modifications with palladium nanoparticles. The unmodified AZO films showed no response in hydrogen in the temperature range 40 °C-150 °C. The operational temperature windows on the low and high temperature sides have been estimated by isolating the semiconductor-to-metal transition temperature zone of the sensor device. The gas response pattern was modeled by considering various adsorption isotherms, which revealed the dominance of heterogeneous adsorption characteristics. The Arrhenius adsorption barrier showed dual variation with change in hydrogen gas concentration on either side of the semiconductor-to-metal transition. A detailed analysis of the hydrogen gas response pattern by considering the changes in nano palladium due to hydrogen adsorption, and semiconductor-to-metal transition of nanocrystalline Al doped ZnO layer due to temperature, along with material characterization studies by glancing incidence X-ray diffraction, atomic force microscopy, and transmission electron microscopy, are presented.

  20. Effect of solvents on sol-gel spin-coated nanostructured Al-doped ZnO thin films: a film for key optoelectronic applications

    Science.gov (United States)

    Kumar, K. Deva Arun; Valanarasu, S.; Kathalingam, A.; Ganesh, V.; Shkir, Mohd.; AlFaify, S.

    2017-12-01

    Aluminum-doped zinc oxide (AZO) thin films were deposited by sol-gel spin coating technique onto the glass substrates using different solvents such as 2-methoxyethanol, methanol, ethanol and isopropanol. Prepared films were characterized by XRD, Raman spectrum, SEM, UV-visible spectrophotometer, photoluminescence (PL) and electrical studies. XRD studies showed that all the prepared films are hexagonal wurtzite structure with polycrystalline nature oriented along (002) direction. SEM images showed uniform particles of size around 60 nm distributed regularly on to the entire glass substrate. EDX analysis confirmed the composition of grown AZO film consisting of Al, Zn and O elements. The prepared films showed highest optical transmittance 94% in the visible range and band gap 3.30 eV. PL spectra for all AZO films showed a strong UV emission peak at 387 nm. The AZO films prepared using isopropanol solvent showed high carrier concentration and low resistivity values as 1.72 × 1020 cm-3 and 2.90 × 10-3 Ω cm, respectively, with high figure of merit ( ϕ) value 8.42 × 10-3 (Ω/sq)-1.

  1. Effects of UV assistance on the properties of al-doped ZnO thin films deposited by sol-gel method

    Science.gov (United States)

    Tseng, Yung-Kuan; Pai, Feng-Ming; Chen, Yan-Cheng; Wu, Chao-Hsien

    2013-11-01

    We report here the preparation of aluminum doped zinc oxide transparent conductive thin films by a UV-assisted sol-gel method. It was found that UV irradiation creates ozone, which promotes the conductivity and transparency of the films. Boro-silicate glasses are used as substrates; an PGME is used as a solvent; after spin-coating, the films are dried and radiated with UV and then heated to 400°C for decarburization and 500°C for annealing under air. The surface morphologies of the prepared films are observed by FE-SEM and AFM. It was found that the films irradiated with UV-C are smoother and denser. An XRD analysis shows that the films have a typical wurtzite crystalline structure with a c-axis orientation normal to the surface. The electric resistance values measured with a four-point probe show that the films irradiated with UV have better conductivity (at approximately 3.4 × 10-3Ω-cm) than the films that did not undergo UV irradiation. An analysis by visible light spectrometry indicates that the AZO films irradiated with UV are more transparent than the films without UV-irradiation.

  2. Properties of NiZnO Thin Films with Different Amounts of Al Doping

    Science.gov (United States)

    Kayani, Zohra N.; Fatima, Gulnaz; Zulfiqar, Bareera; Riaz, Saira; Naseem, Shahzad

    2017-10-01

    Transparent Al-doped NiZnO thin films have been fabricated by sol-gel dip coating and investigated using scanning electron microscopy, x-ray diffraction analysis, ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry, vibrating-sample magnetometry, and Fourier-transform infrared spectroscopy. The Al-doped NiZnO films consisted of ZnO hexagonal and α-Al2O3 rhombohedral phases as the Al incorporation was gradually increased from 1 at.% up to 3 at.%. A decrease in the optical bandgap from 3.90 eV to 3.09 eV was observed for films grown with Al content of 1 at.% to 2.5 at.%, but at 3 at.% Al, the bandgap increased to 3.87 eV. Optical transmittance of 96% was achieved for these transparent oxide films. Study of their magnetic properties revealed that increasing Al percentage resulted in enhanced ferromagnetism. The saturated magnetization increased with increasing Al percentage. The ferromagnetic properties of Al-doped NiZnO are mediated by electrons. The surface of the deposited thin films consisted of nanowires, nanorods, porous surface, and grains.

  3. Effects of morphology on the thermoelectric properties of Al-doped ZnO

    DEFF Research Database (Denmark)

    Han, Li; Van Nong, Ngo; Zhang, Wei

    2014-01-01

    The nanoparticles of Al-doped ZnO were successfully grown into rod-like and platelet-like morphologies by soft chemical routes. These powders were consolidated using spark plasma sintering (SPS) technique. The samples consolidated from rods and platelets exhibited characteristic structures...

  4. Genesis of flake-like morphology and dye-sensitized solar cell performance of Al-doped ZnO particles: a study

    International Nuclear Information System (INIS)

    Sengupta, D.; Mondal, B.; Mukherjee, K.

    2017-01-01

    In dye-sensitized solar cell (DSSC) application, the particulate morphologies of photo-anode facilitate efficient dye loading and thus lead to better photo-conversion efficiency than their thin film counterpart. However, till date, the electronic and optical properties as well as the DSSC application of Al-doped ZnO (AZO) particles as photo-anode material is studied less than thin films. Herein, phase formation behavior, morphology evolution, optical properties, and dye-sensitized solar cell performance of wet chemically prepared ZnO and AZO (dopant level: 1–4 mol%) particles are studied. It is found that Al doping modulates significantly the ZnO morphology which in turn results the maximum dye adsorption as well as best photo-conversion efficiency at optimum dopant concentration. Specifically, the nanoparticle of ZnO turns predominantly to flake-like morphology with a higher surface area when 2 mol% Al is doped. Such morphology modulation is expected, since the crystallinity, lattice parameters, and lattice strain of ZnO changes appreciably with Al doping. The variations of optical properties (absorbance, diffused reflectance, and band gap) of AZO materials as compared to primitive ZnO are also identified through UV-vis studies. An attempt is made here to correlate the structural features with the photovoltaic performances of ZnO and AZO.

  5. Genesis of flake-like morphology and dye-sensitized solar cell performance of Al-doped ZnO particles: a study

    Energy Technology Data Exchange (ETDEWEB)

    Sengupta, D.; Mondal, B.; Mukherjee, K., E-mail: kalisadhanm@yahoo.com [CSIR-Central Mechanical Engineering Research Institute, Centre for Advanced Materials Processing (India)

    2017-03-15

    In dye-sensitized solar cell (DSSC) application, the particulate morphologies of photo-anode facilitate efficient dye loading and thus lead to better photo-conversion efficiency than their thin film counterpart. However, till date, the electronic and optical properties as well as the DSSC application of Al-doped ZnO (AZO) particles as photo-anode material is studied less than thin films. Herein, phase formation behavior, morphology evolution, optical properties, and dye-sensitized solar cell performance of wet chemically prepared ZnO and AZO (dopant level: 1–4 mol%) particles are studied. It is found that Al doping modulates significantly the ZnO morphology which in turn results the maximum dye adsorption as well as best photo-conversion efficiency at optimum dopant concentration. Specifically, the nanoparticle of ZnO turns predominantly to flake-like morphology with a higher surface area when 2 mol% Al is doped. Such morphology modulation is expected, since the crystallinity, lattice parameters, and lattice strain of ZnO changes appreciably with Al doping. The variations of optical properties (absorbance, diffused reflectance, and band gap) of AZO materials as compared to primitive ZnO are also identified through UV-vis studies. An attempt is made here to correlate the structural features with the photovoltaic performances of ZnO and AZO.

  6. On the transparent conducting oxide Al doped ZnO: First Principles and Boltzmann equations study

    Energy Technology Data Exchange (ETDEWEB)

    Slassi, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Naji, S. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Department of Physics, Faculty of Science, Ibb University, Ibb (Yemen); Benyoussef, A. [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco); Hamedoun, M., E-mail: hamedoun@hotmail.com [Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat (Morocco); El Kenz, A. [LMPHE (URAC 12), Faculté des Sciences, Université Mohammed V-Agdal, Rabat (Morocco)

    2014-08-25

    Highlights: • The incorporation of Al in ZnO increases the optical band edge absorption. • Incorporated Al creates shallow donor states of Al-3s around Fermi level. • Transmittance decreases in the visible and IR regions, while it increases in the UV region. • Electrical conductivity increases and reaches almost the saturation for high concentration of Al. - Abstract: We report, in this work, a theoretical study on the electronic, optical and electrical properties of pure and Al doped ZnO with different concentrations. In fact, we investigate these properties using both First Principles calculations within TB-mBJ approximation and Boltzmann equations under the constant relaxation time approximation for charge carriers. It is found out that, the calculated lattice parameters and the optical band gap of pure ZnO are close to the experimental values and in a good agreement with the other theoretical studies. It is also observed that, the incorporations of Al in ZnO increase the optical band edge absorption which leads to a blue shift and no deep impurities levels are induced in the band gap as well. More precisely, these incorporations create shallow donor states around Fermi level in the conduction band minimum from mainly Al-3s orbital. Beside this, it is found that, the transmittance is decreased in the visible and IR regions, while it is significantly improved in UV region. Finally, our calculations show that the electrical conductivity is enhanced as a result of Al doping and it reaches almost the saturation for high concentration of Al. These features make Al doped ZnO a transparent conducting electrode for optoelectronic device applications.

  7. Insight about electrical properties of low-temperature solution-processed Al-doped ZnO nanoparticle based layers for TFT applications

    Energy Technology Data Exchange (ETDEWEB)

    Diallo, Abdou Karim; Gaceur, Meriem; Fall, Sadiara; Didane, Yahia; Ben Dkhil, Sadok; Margeat, Olivier, E-mail: margeat@cinam.univ-mrs.fr; Ackermann, Jörg; Videlot-Ackermann, Christine, E-mail: videlot@cinam.univ-mrs.fr

    2016-12-15

    Highlights: • Al-doped ZnO (AZO) nanoparticles. • Impact of dispersion state and solid state on electrical properties. • Extrinsic doping with Al for high conducting AZO nanoparticle based layers. • Low-temperature operating nanoparticulate AZO TFTs. - Abstract: Aluminium-doped zinc oxide nanoparticles (NPs) with controlled Al doping contents (AZO{sub x} with x = 0–0.8 at% of Al) were explored as new oxide semiconductor materials to study the impact of doping on both solution and solid states. Polycrystalline AZO{sub x} thin films were produced by spin-coating the dispersions following by a thermal post-treatment at low-temperature (80 °C or 150 °C). The coated AZO{sub x} films were employed as active layer in thin-film transistors. Morphology and microstructure were studied by scanning electron microscopy and X-ray diffraction. The impact on the device performances (mobility, conductivity, charge carrier density) of Al-doping content together with the solution state was examined. Spin-coated films delivered an electron mobility up to 3 × 10{sup −2} cm{sup 2}/Vs for the highest Al-doping ratio AZO{sub 0.8}. Despite highly different morphologies, extrinsic doping with aluminium significantly increases the conductivity of low temperature solution-processed AZO{sub x} NPs series based layers by several orders of magnitude from AZO{sub 0} to AZO{sub 0.8}.

  8. Impressive enhancement in the cell performance of ZnO nanorod-based perovskite solar cells with Al-doped ZnO interfacial modification.

    Science.gov (United States)

    Dong, Juan; Zhao, Yanhong; Shi, Jiangjian; Wei, Huiyun; Xiao, Junyan; Xu, Xin; Luo, Jianheng; Xu, Jing; Li, Dongmei; Luo, Yanhong; Meng, Qingbo

    2014-11-11

    Al-doped ZnO (AZO) modified ZnO nanorods have been applied in CH3NH3PbI3 perovskite solar cells, which can show a positive effect on open circuit voltage and power conversion efficiency. The average power conversion efficiency is improved from 8.5% to 10.07% and the maximum efficiency reaches 10.7%.

  9. Large-scale high aspect ratio Al-doped ZnO nanopillars arrays as anisotropic metamaterials

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy; Takayama, Osamu; Panah, Mohammad Esmail Aryaee

    2017-01-01

    High aspect ratio free-standing Al-doped ZnO (AZO) nanopillars and nanotubes were fabricated using a combination of advanced reactive ion etching and atomic layer deposition (ALD) techniques. Prior to the pillar and tube fabrication, AZO layers were grown on flat silicon and glass substrates with...

  10. Fabrication of deep-profile Al-doped ZnO one- and two-dimensional lattices as plasmonic elements

    DEFF Research Database (Denmark)

    Jensen, Flemming; Shkondin, Evgeniy; Takayama, Osamu

    2016-01-01

    In this work, we report on fabrication of deep-profile one- and two-dimensional lattices made from Al-doped ZnO (AZO). AZO is considered as an alternative plasmonic material having the real part of the permittivity negative in the near infrared range. The exact position of the plasma frequency of...

  11. Electrical transport and Al doping efficiency in nanoscale ZnO films prepared by atomic layer deposition

    NARCIS (Netherlands)

    Wu, Y.; Hermkens, P.M.; Loo, B.W.H. van de; Knoops, H.C.M.; Potts, S.E.; Verheijen, M.A.; Roozeboom, F.; Kessels, W.M.M.

    2013-01-01

    In this work, the structural, electrical, and optical properties as well as chemical bonding state of Al-doped ZnO films deposited by atomic layer deposition have been investigated to obtain insight into the doping and electrical transport mechanisms in the films. The range in doping levels from 0%

  12. Orientation dependence of transport property and microstructural characterization of Al-doped ZnO ceramics

    International Nuclear Information System (INIS)

    Kaga, Hisashi; Kinemuchi, Yoshiaki; Yilmaz, Huseyin; Watari, Koji; Nakano, Hiromi; Nakano, Hiroshi; Tanaka, Satoshi; Makiya, Atsushi; Kato, Zenji; Uematsu, Keizo

    2007-01-01

    The correlation between thermoelectric properties and crystallographic texture strengths of Al-doped ZnO ceramics prepared by the high magnetic field alignment method was investigated. The relationship between texture strength and electrical conductivity showed a unique characteristic, in which electrical conductivity increased with increasing texture strength, while the Seebeck coefficient was almost independent of the texture strength. Theoretical calculation indicated that the electrical conductivity was not only a function of crystal orientation but also of grain boundary structures. High-resolution transmission electron microscopy revealed that an interfacial layer or segregation of Al at grain boundaries was not observed; however, the coincidence site lattice such as Σ49 was observed at higher texture strength, suggesting that the unique microstructure was the main cause of these transport differences

  13. Fabrication of Al doped ZnO films using atmospheric pressure cold plasma

    International Nuclear Information System (INIS)

    Suzaki, Yoshifumi; Miyagawa, Hayato; Yamaguchi, Kenzo; Kim, Yoon-Kee

    2012-01-01

    Under atmospheric pressure, homogeneous non-equilibrium cold plasma was generated stably by high voltage pulsed power (1 kV, 20 kHz, 38 W) excitation of a mixture of He and O 2 gases produced by a dielectric barrier discharge setup. By feeding Bis (2 methoxy‐6-methyl‐3, 5-heptanedione) Zn (Zn-MOPD, C 18 H 3 O 6 Zn) and Tris (2-methoxy‐6‐methy l‐3, 5-heptanedione) Al (Al-MOPD, C 27 H 45 O 9 Al) into this plasma with He carrier gas, transparent flat Al-doped ZnO (ZnO:Al) films about 120–240 nm thick were prepared on glass substrates directly under the slit made into the cathode. Deposition rates of the films were about 20–40 nm/min. The concentration of Al was measured by inductively coupled plasma atomic emission spectroscopy. The composition ratio of Al to Zn was 7.8 mol% when the carrier He gas flow rate of Al-MOPD was 30 cm 3 . The average transmittance of all films was more than 85% in the wavelength range from 400 to 800 nm. When the composition ratio of Al/Zn was between 1.1 and 7.8 mol%, the optical band gap of the film increased from 3.28 to 3.40 eV. The resistivity of ZnO:Al film was 2.96 Ω cm at 1.3 mol% of Al/Zn. In addition, the microstructure of the films was studied by X-ray diffraction measurement and field emission scanning electron microscope observation. It was revealed that doped Al is substituted onto the Zn site of the ZnO crystalline structure in ZnO:Al films. - Highlights: ► An atmospheric pressure cold plasma generator generated stable glow discharge. ► We fabricated Al doped ZnO films on glass substrates using cold plasma. ► Al concentration measured by inductively coupled plasma atomic emission spectroscopy. ► The transmission spectrum and the resistivity of the films were measured. ► The microstructure of the films was studied.

  14. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Directory of Open Access Journals (Sweden)

    Tamil Many K Thandavan

    Full Text Available Vapor phase transport (VPT assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn was used to prepare un-doped and Al-doped zinc oxide (ZnO nanostructures (NSs. The structure and morphology were characterized by field emission scanning electron microscopy (FESEM and x-ray diffraction (XRD. Photoluminescence (PL properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni, oxygen interstitials (Oi, zinc vacancy (Vzn, singly charged zinc vacancy (VZn-, oxygen vacancy (Vo, singly charged oxygen vacancy (Vo+ and oxygen anti-site defects (OZn in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  15. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Science.gov (United States)

    Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  16. Determination of chemical state of Al doping element in ZnO layer

    International Nuclear Information System (INIS)

    Csik, A.; Toth, J.; Lovics, R.; Takats, V.; Hakl, J.; Vad, K.

    2011-01-01

    Complete text of publication follows. Transparent and conducting oxides (TCO) thin films are very important from the scientific and technological point of view. The coexistence of electrical conductivity and optical transparency in these materials makes it possible to use them in modern technologies: transparent electrodes for flat panel displays and photovoltaic cells, low emissivity windows, transparent thin films transistors, light emitting diodes. One of the important TCO semiconductors is the impurity-doped zinc-oxide (ZnO) layer, for example aluminium doped zinc-oxide layer (AZO), due to its unique physical and chemical properties. It has wide band gap (3.44 eV) and large exciton binding energy (60 meV). ZnO thin layers have a great interest for potential applications in optical and optoelectronic devices. Furthermore, high quality single crystal ZnO wafers has already been available as a result of new developments in ZnO growth technologies with the capability to scale up wafer size, which is an important factor for increasing efficiency of solar cells. Nonetheless, in order to enable the use of ZnO layers with enhanced electrical properties, higher conductivities can be obtained by doping with donor elements such as aluminium, gallium, indium, boron or fluorine. Investigation of p-type doping possibilities, diffusion processes and thermal stability of these layers are in the focus of interest in the interpretation of their optical and electrical properties, and the prediction of their lifetime. In our SNMS/SIMS-XPS laboratory, experiments on TCO layered structures were carried on. Depth profile and chemical state analyses of ZnO/AlO/ZnO layered structures were performed by Secondary Neutral Mass Spectrometry (SNMS) and X-ray photoelectron spectroscopy (XPS). The samples were produced by atomic layer deposition technique with the following layered structure: between a few hundred atomic layers of ZnO was an AlO atomic layer. The SNMS was used for depth

  17. A Study of Structural and Photoluminescence for Al-Doped CdO Thin Films

    Directory of Open Access Journals (Sweden)

    Bong Ju Lee

    2016-01-01

    Full Text Available Al-doped CdO thin films were prepared by radio frequency magnetron sputtering at different deposition time and substrate temperature. X-ray diffraction showed that the changes in the intensities of the (200, (220, and (311 planes followed a similar trend with increase in deposition time. The surface of the thin film was examined by scanning electron microscopy. Grain sizes of Al-doped CdO thin films increased significantly with increasing deposition time. The film thicknesses were 0.09, 0.12, 0.20, and 0.225 μm for the deposition times of 1, 2, 3, and 4 h, respectively. The photoluminescence spectra of the Al-doped CdO thin films were measured at room temperature. The photoluminescence wavelength changed in the sequence, green, blue, green, and blue, with increasing deposition time, which indicates that blue light emitting films can be fabricated by adjusting the processing parameters.

  18. Preparation and characterisation of Al-doped Zn O thin films

    International Nuclear Information System (INIS)

    Saad, M.; Kassis, A.; Nounou, F.

    2010-12-01

    Al-doped Zn O thin films were prepared using RF magnetron sputtering under several preparation conditions (deposition pressure, RF power, substrate temperature). The films were optically and electrically characterized by measuring their transmission and resistance. Furthermore, x-ray diffraction spectroscopy was used in order to study the structural properties of these films. As a result of this study, the preparation conditions suitable for the highly conductive part of the window layer in solar cells were determined. (author)

  19. Variation in Structural and Optical Properties of Al Doped ZnO Nanoparticles Synthesized by Sol-gel Process

    Directory of Open Access Journals (Sweden)

    Vanaja Aravapalli

    2018-04-01

    Full Text Available This article focuses on analyzing structural and optical properties of Al doped ZnO (AZO synthesized with two different precursors aluminum chloride and aluminum nitrate. The nanoparticles were successfully fabricated and characterized at room temperature by sol-gel process. The objective of improving properties of ZnO nanoparticles by introducing dopants was successful with formation of nanoparticles having different crystalline sizes, optical absorption and luminescence properties. The two different sources influenced properties of ZnO. The particles with less crystalline size obtained from aluminum nitrate. Change in morphology from spherical to bar like morphology proved from SEM spectra. Presence of functional groups predicted from FTIR spectra. PL spectra proved UV emission and visible emission for AZO nanoparticles synthesized using dopant sources aluminum chloride and aluminum nitrate respectively. The obtained properties prove successful utilization of AZO nanoparticles as building materials in fabrication of optoelectronic devices.

  20. Efficiency enhancement of regular-type perovskite solar cells based on Al-doped ZnO nanorods as electron transporting layers

    Science.gov (United States)

    Huang, Zheng-Lun; Chen, Chih-Ming; Lin, Zheng-Kun; Yang, Sheng-Hsiung

    2017-02-01

    In this paper, we first incorporated Al(NO3)3·9H2O as the Al source into ZnO nanorods (NRs) lattice via the hydrothermal method to modify nature properties of ZnO NRs for the fabrication of perovskite solar cells (PSCs). The X-ray diffraction (XRD) pattern of Al-doped ZnO NRs exhibits higher 2θ values and stronger intensity of (002) plane. Larger optical band gap and higher electrical conductivity of Al-doped ZnO NRs are also observed relative to non-doped ZnO ones. The steady-state photoluminescence shows effective charge extraction and collection at the interface between Al-doped ZnO NRs and perovskite layer. The optimized PSC based on Al-doped ZnO NRs showed an open-circuit voltage of 0.84 V, a short-circuit current density of 21.93 mA/cm2, a fill factor of 57%, and a power conversion efficiency of 10.45% that was 23% higher than the non-doped ZnO ones.

  1. Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

    International Nuclear Information System (INIS)

    Fukuoka, O.; Matsunami, N.; Tazawa, M.; Shimura, T.; Sataka, M.; Sugai, H.; Okayasu, S.

    2006-01-01

    Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100 MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO 2 glass at 400 deg. C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification

  2. Effect of Al doping on microstructure and optical band gap of ZnO ...

    Indian Academy of Sciences (India)

    . Kolkata 700 064, India. ∗ ... (XRD), scanning electron microscopy (SEM) and energy-dispersive X-rays (EDX) were used to investigate the effect of Al doping on the ..... initially due to replacement of Zn ion by Al ions. Beyond a certain level of ...

  3. Surface roughness characterization of Al-doped zinc oxide thin films using rapid optical measurement

    Science.gov (United States)

    Kuo, Chil-Chyuan

    2011-07-01

    Transparent conductive oxide thin films have been widely investigated in photoelectric devices such as flat panel display (FPD) and solar cells. Al-doped zinc oxide (AZO) thin films have been widely employed in FPD. Measuring the surface roughness of AZO thin films is important before the manufacturing of photoelectric device using AZO thin films because surface roughness of AZO thin films will significantly affect the performance of photoelectric device. Traditional methods to measure surface roughness of AZO thin films are scanning electron microscopy and atomic force microscopy. The disadvantages of these approaches include long lead time and slow measurement speed. To solve this problem, an optical inspection system for rapid measurement of the surface roughness of AZO thin films is developed in this study. It is found that the incident angle of 60° is a good candidate to measure the surface roughness of AZO thin films. Based on the trend equation y=-3.6483 x+2.1409, the surface roughness of AZO thin films ( y) can be directly deduced from the peak power density ( x) using the optical inspection system developed. The maximum measurement-error rate of the optical inspection system developed is less than 8.7%.The saving in inspection time of the surface roughness of AZO thin films is up to 83%.

  4. Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer

    Science.gov (United States)

    Baek, Seong-Ho; Noh, Bum-Young; Park, Il-Kyu; Kim, Jae Hyun

    2012-01-01

    In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it.

  5. Highly ordered Al-doped ZnO nano-pillar and tube structures as hyperbolic metamaterials for mid-infrared plasmonics

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy; Takayama, Osamu; Panah, Mohammad Esmail Aryaee

    Fabrication of large area metamaterial structures in a reproducible manner is a tremendous challenge. Here, we realize the fabrication of plasmonic metamaterials for the mid-infrared wavelength region composed of Al-doped ZnO (AZO) pillars by a combination of atomic layer deposition and reactive...

  6. On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering

    DEFF Research Database (Denmark)

    Crovetto, Andrea; Ottsen, Tobias Sand; Stamate, Eugen

    2016-01-01

    The electrical properties of RF-sputtered Al-doped ZnO are often spatially inhomogeneous and strongly dependent on deposition parameters. In this work, we study the mechanisms that limit the minimum resistivity achievable under different deposition regimes. In a low- and intermediate......-pressure regime, we find a generalized dependence of the electrical properties, grain size, texture, and Al content on compressive stress, regardless of sputtering pressure or position on the substrate. In a high-pressure regime, a porous microstructure limits the achievable resistivity and causes it to increase...... over time as well. The primary cause of inhomogeneity in the electrical properties is identified as energetic particle bombardment. Inhomogeneity in oxygen content is also observed, but its effect on the electrical properties is small and limited to the carrier mobility....

  7. Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer

    KAUST Repository

    Jagadamma, Lethy Krishnan

    2015-10-05

    The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, and yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates. We show that ammonia addition to the aqueous AZO nanoparticle solution is a critically important step toward producing compact and smooth thin films which partially retain the aluminum doping and crystalline order of the starting AZO nanocrystals. The ammonia treatment appears to reduce the native defects via nitrogen incorporation, making the AZO film a very good electron transporter and energetically matched with the fullerene acceptor. Importantly, highly efficient solar cells are achieved without the need for additional surface chemical passivation or modification, which has become an increasingly common route to improving the performance of evaporated or solution-processed ZnO ETLs in solar cells.

  8. Synthesis of High Crystalline Al-Doped ZnO Nanopowders from Al2O3 and ZnO by Radio-Frequency Thermal Plasma

    Directory of Open Access Journals (Sweden)

    Min-Kyeong Song

    2015-01-01

    Full Text Available High crystalline Al-doped ZnO (AZO nanopowders were prepared by in-flight treatment of ZnO and Al2O3 in Radio-Frequency (RF thermal plasma. Micron-sized (~1 μm ZnO and Al2O3 powders were mixed at Al/Zn ratios of 3.3 and 6.7 at.% and then injected into the RF thermal plasma torch along the centerline at a feeding rate of 6.6 g/min. The RF thermal plasma torch system was operated at the plate power level of ~140 kVA to evaporate the mixture oxides and the resultant vapor species were condensed into solid particles by the high flow rate of quenching gas (~7000 slpm. The FE-SEM images of the as-treated powders showed that the multipod shaped and the whisker type nanoparticles were mainly synthesized. In addition, these nanocrystalline structures were confirmed as the single phase AZO nanopowders with the hexagonal wurtzite ZnO structure by the XRD patterns and FE-TEM results with the SAED image. However, the composition changes of 0.3 and 1.0 at.% were checked for the as-synthesized AZO nanopowders at Al/Zn ratios of 3.3 and 6.7 at.%, respectively, by the XRF data, which can require the adjustment of Al/Zn in the mixture precursors for the applications of high Al doping concentrations.

  9. Growth of Al-doped ZnO films with tilted nano-columns on r-cut sapphire substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Joon Hwan [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Lu, Tianlin; Cho, Sungmee; Khatkatay, Fauzia [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States); Chen, Li [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Wang, Haiyan, E-mail: wangh@ece.tamu.edu [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States)

    2012-12-01

    2 wt.% Al{sub 2}O{sub 3}-doped ZnO (AZO) thin films in both single layer and bi-layer forms were deposited on {alpha}-Al{sub 2}O{sub 3} (011{sup Macron }2) (r-cut) and (0001) (c-cut) substrates by a pulsed laser deposition technique. Single layer AZO films were grown under either vacuum or 33.3 Pa of O{sub 2} pressure. Bilayer AZO films were grown with a sequential deposition of a uniform template layer under vacuum and a nano-column-structured layer under 33.3 Pa of O{sub 2} pressure. Interestingly, single layer AZO film grown on r-cut sapphire in high oxygen pressure (33.3 Pa) shows tilted grain boundaries along [1{sup Macron }102{sup Macron }]{sub AZO}. The bilayer film deposited on r-cut substrate shows tilted nano-column growth while the film grown on c-cut substrate has vertically grown nano-columns. The results of X-ray diffraction and cross-section transmission electron microscopy studies show a systematic variation of the d-spacing of (0002){sub AZO} and (112{sup Macron }0){sub AZO} for all AZO films. Electrical resistivity was measured and found to be strongly dependent on the different microstructures achieved under different oxygen pressures and substrates. - Highlights: Black-Right-Pointing-Pointer 2 wt.% Al doped ZnO (AZO) thin film grown on r-cut sapphire under 33.3 Pa of O{sub 2} Black-Right-Pointing-Pointer Tiled boundary along [1{sup Macron }102{sup Macron }]{sub AZO} observed as a result of internal lattice strain Black-Right-Pointing-Pointer Tilted nano-column processed after sequential deposition under vacuum and 33.3 Pa of O{sub 2} Black-Right-Pointing-Pointer Significantly reduced electrical resistivity observed for the films on r-cut sapphire.

  10. Effect of Al doping on microstructure and optical band gap of ZnO ...

    Indian Academy of Sciences (India)

    % AZO indicating a blue-shift for 1% AZO film. However, for 2% AZO film, a decrease in band gap compared to pure ZnO is observed indicating a red-shift of fundamental absorption edge. Electrical resistance shows an initial decrease with.

  11. Effect of Al doping on microstructure and optical band gap of ZnO ...

    Indian Academy of Sciences (India)

    % AZO film and 25.13 nm for 2% AZO film. Incorporation of Al was confirmed from elemental analysis using EDX. SEM micrograph shows that pure ZnO particles are spherical shaped. However, AZO films show particles with off-spherical shape ...

  12. The effect of the Al concentration on efficiency of the hybrid AnE-PVstat:Al-doped ZnO nanocrystal solar cells

    Science.gov (United States)

    Louhichi, M.; Ben Hamed, Z.; Romdhane, S.; Egbe, D. A. M.; Bouchriha, H.

    2017-11-01

    In the present study, Al-doped ZnO nanoparticles (AZO) with different Al concentration (0.2%, 0.6%, 5%) as an acceptor are immersed in the anthracene containing poly(p-phenylene-ethynylene)-alt-poly(p-phenylene-vinylene) (PPE-PPV) denoted AnE-PVstat network polymer as donor component to improve the photovoltaic performance. The absorption spectra of the AnE-PVstat:AZO(%) are investigated and deconvoluted based on Franck-Condon analysis. The absorption spectra in nanocomposites thin films showed a slight red shift compared to the pristine polymer. This move may emerge from a chain-chain contact change through the arrangement of rod-like chains of quasi-coupled atoms by means of the nanoparticles diffusion into the system and the variation of aluminum doping concentration. Therefore, we fabricated devices with an AnE-PVstat:AZO blend. Moreover, the conduction types are estimated and used to determine the optoelectronics parameters through theoretical models. The photovoltaic performances of the hybrid solar cells are evaluated. The hybrid photovoltaic device of AnE-PVstat:AZO(0.2%) performance exhibited an improved device efficiencies as high as 0.34%, with Jsc = 1.61 mA/cm2, Voc = 0.81 V and a FF = 0.26 under illumination with 100 mW/cm2 light intensity.

  13. Study on the electrical and optical properties of Ag/Al-doped ZnO coatings deposited by electron beam evaporation

    International Nuclear Information System (INIS)

    Sahu, D.R.; Lin, S.-Y.; Huang, J.-L.

    2007-01-01

    A layer of silver was deposited onto the surface of glass substrates, coated with AZO (Al-doped ZnO), to form Ag/AZO film structures, using e-beam evaporation techniques. The electrical and optical properties of AZO, Ag and Ag/AZO film structures were studied. The deposition of Ag layer on the surface of AZO films resulted in lowering the effective electrical resistivity with a slight reduction of their optical transmittance. Ag (11 nm)/AZO (25 nm) film structure, with an accuracy of ±0.5 nm for the thickness shows a sheet resistance as low as 5.6 ± 0.5 Ω/sq and a transmittance of about 66 ± 2%. A coating consisting of AZO (25 nm)/Ag (11 nm)/AZO (25 nm) trilayer structure, exhibits a resistance of 7.7 ± 0.5 Ω/sq and a high transmittance of 85 ± 2%. The coatings have satisfactory properties of low resistance, high transmittance and highest figure of merit for application in optoelectronics devices including flat displays, thin films transistors and solar cells as transparent conductive electrodes

  14. Polymer Solar Cells with Efficiency >10% Enabled via a Facile Solution-Processed Al-Doped ZnO Electron Transporting Layer

    KAUST Repository

    Jagadamma, Lethy Krishnan

    2015-04-22

    A facile and low-temperature (125 °C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates is described. The ammonia-treatment of the aqueous AZO nanoparticle solution produces compact, crystalline, and smooth thin films, which retain the aluminum doping, and eliminates/reduces the native defects by nitrogen incorporation, making them good electron transporters and energetically matched with the fullerene acceptor. It is demonstrated that highly efficient solar cells can be achieved without the need for additional surface chemical modifications of the buffer layer, which is a common requirement for many metal oxide buffer layers to yield efficient solar cells. Also highly efficient solar cells are achieved with thick AZO films (>50 nm), highlighting the suitability of this material for roll-to-roll coating. Preliminary results on the applicability of AZO as electron injection layer in F8BT-based polymer light emitting diode are also presented. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. A resistance ratio change phenomenon observed in Al doped ZnO (AZO)/Cu(In1-xGax)Se2/Mo resistive switching memory device

    Science.gov (United States)

    Guo, Tao; Sun, Bai; Mao, Shuangsuo; Zhu, Shouhui; Xia, Yudong; Wang, Hongyan; Zhao, Yong; Yu, Zhou

    2018-03-01

    In this work, the Cu(In1-xGax)Se2 (CIGS), Al doped ZnO (AZO) and Mo has been used for constructing a resistive switching device with AZO/CIGS/Mo sandwich structure grown on a transparent glass substrate. The device represents a high-performance memory characteristics under ambient temperature. In particularly, a resistance ratio change phenomenon have been observed in our device for the first time.

  16. Determination of Al concentration in Al doped ZnO using Auger spectra excited by Mo X-rays

    International Nuclear Information System (INIS)

    Toth, J.; Koever, L.; Cserny, I.; Varga, D.

    2006-01-01

    Complete text of publication follows. A good conductor with excellent transparency is of crucial importance for the window layer of CIGS solar cells. Al doped ZnO is a good candidate for this purpose, its conductivity depends on the concentration and chemical state of the Al dopant atoms. It was demonstrated that the non-conventional XPS using Mo X-rays for excitation is a very sensitive tool for the detection of Al, P, Si [1, 2, 3]. The present paper compares the experimental ratios for Zn/Al photoinduced peak intensity ratios obtained using both Al and Mo X-ray excitations. The Mo excited Zn/Al intensity ratios can be determined with higher selectivity and sensitivity than the Zn/Al intensity ratios excited by Al X-rays. The experiments were performed with a hemispherical deflector electron spectrometer [4]. The chemical state of the Al was identified to be close to that in Al 2 O 3 . The atomic concentrations were determined using a calibration curve based on ZnO/Al samples with known composition of Al. The energy dependent efficiency of the electron spectrometer was determined comparing REELS spectra of Cu specimen to standard spectra measured by K. Goto (Nagoya Institute of Technology, Japan). For evaluation of the Al atomic concentrations from the measured photoelectron intensities the photoionisation cross-sections of Band et al [5] and the IMFP data of S. Tanuma et al [6] and C.J. Powell and A. Jablonski [7] were used. (author)

  17. Carrier Compensation Induced by Thermal Annealing in Al-Doped ZnO Films

    Directory of Open Access Journals (Sweden)

    Takashi Koida

    2017-02-01

    Full Text Available This study investigated carrier compensation induced by thermal annealing in sputtered ZnO:Al (Al2O3: 0.25, 0.5, 1.0, and 2.0 wt % films. The films were post-annealed in a N2 atmosphere at low (1 × 10−23 atm and high (1 × 10−4 atm oxygen partial pressures (PO2. In ZnO:Al films with low Al contents (i.e., 0.25 wt %, the carrier density (n began to decrease at annealing temperatures (Ta of 600 °C at low PO2. At higher PO2 and/or Al contents, n values began to decrease significantly at lower Ta (ca. 400 °C. In addition, Zn became desorbed from the films during heating in a high vacuum (i.e., <1 × 10−7 Pa. These results suggest the following: (i Zn interstitials and Zn vacancies are created in the ZnO lattice during post-annealing treatments, thereby leading to carrier compensation by acceptor-type Zn vacancies; (ii The compensation behavior is significantly enhanced for ZnO:Al films with high Al contents.

  18. Optical characterization of pure and Al-doped ZnO prepared by sol-gel method

    Science.gov (United States)

    Belka, Radosław; Keczkowska, Justyna; Kasińska, Justyna

    2016-09-01

    In this paper the preparation process and optical characterization of pure and Al3+ doped zinc oxide (Al:ZnO) coatings will be presented. ZnO based materials have been studied extensively due to their potential applications in optoelectronic devices as conductive gas sensors, transparent conductive, electrodes, solar cell windows, varistors, UVfilters or photovoltaic cells. It is II-VI semiconductor with wide-band gap of 3.37 eV and large exciton binding energy of 60meV. It is possible to improve the conductivity of ZnO coating by intentionally doping ZnO with aluminium ions during preparation process. Such transparent and conducting thin films, known as AZO (Aluminium Zinc Oxide) films, are very good candidate for application as transparent conducting materials in many optoelectronic devices. The well-known sol-gel method is used for preparation of solution, coated on glass substrates by dip coating process. Prepared samples were investigated by Raman and UV-VIS spectroscopy. Transmittance as well as specular and diffuse reflectance spectroscopy methods were used for studies of optical parameters. We found that Al admixture influences on optical bandgap of ZnO.

  19. Solution processed Al doped ZnO film fabrication through electrohydrodynamic atomization

    International Nuclear Information System (INIS)

    Muhammad, Nauman Malik; Duraisamy, Navaneethan; Dang, Hyun-Woo; Jo, Jeongdai; Choi, Kyung-Hyun

    2012-01-01

    In this study, highly transparent, 250 nm thick films of Aluminum doped Zinc-oxide (ZnO:Al) are achieved on glass substrates at ambient conditions through a solution processing technique called electrohydrodynamic atomization. A 10 wt.% monodispersed solution containing 6% ZnO:Al nanoparticles (ZnO/Al 2 O 3 ) in ethanol has been synthesized first and then used in the deposition process as the working solution. Pure and uniform transparent films with an average transmittance of 93% have been deposited with crystal structure exhibiting both zincite and gahnite phases. Surface composition purity has been confirmed using X-ray photoelectron spectroscopy technique and the clear indication of Zn-2p and Al-2p peaks confirms surface integrity. Fourier Transform Infrared analysis further confirms the presence of aluminum in the samples. The electrical properties are studied by recording and analyzing the current–voltage (I–V) measurements and the resistivity has been estimated from the slope of the IV-curve which is approximately 25 mΩ.cm. The layer roughness has been characterized using atomic force microscopy. - Highlights: ►Aluminum doped Zinc oxide (ZnO:Al) films are made via electrohydrodynamic atomization. ►ZnO:Al nano-particle ink is used to form thin films in single step at room conditions. ►Scanning electron and atomic force microscopes confirm fine layer characteristics. ►X-ray photoelectron and Fourier Transform-Infrared spectroscope confirm film purity. ►Transparent and conductive films have been fabricated with wurtzite structure.

  20. Effect of deposition time on the properties of Al doped ZnO films prepared by DC magnetron sputtering

    Science.gov (United States)

    Bhand, Ganesh R.; Motwani, Nitu; Chaure, Nandu B.

    2017-05-01

    Aluminum-doped zinc oxide (AZO) thin films were successfully prepared on glass substrates at room temperature by DC magnetron sputtering. The sputtering time varied from 5 minute to 30 minute, while the power was kept at 230W for all depositions. The structural and optical properties of AZO films were investigated by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Raman Spectroscopy, Photoluminescence, and UV-visible spectrophotometer. Polycrystalline AZO thin films with hexagonal wurtzite structure were recorded by XRD analysis. The crystallinity and surface morphologies of the films are strongly dependent on the growth time, which in turn exerts a great effect on structural and optical properties of the AZO films. The transmittance for all the AZO films was above 92% in the visible region, and the largest band gap achieved as compare to intrinsic ZnO (3.3 eV). The defect distribution was analyzed by PL analysis.

  1. Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Bong Ju Lee

    2015-01-01

    Full Text Available Al-doped zinc-oxide (AZO thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021 to 6.16 × 1017 cm−3 with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD patterns show that the (002/(103 peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS of the O1s were decomposed into metal oxide component (peak A and the adsorbed molecular oxygen on thin films (peak B. The area ratio of XPS peaks (A/B was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

  2. Pressurized polyol synthesis of Al-doped ZnO nanoclusters with high electrical conductivity and low near-infrared transmittance

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ho-Nyun; Shin, Chi-Ho [Surface Technology R& BD Group, Korea Institute of Industrial Technology (KITECH), Incheon 406-840 (Korea, Republic of); Hwang, Duck Kun [Department of Corporate Diagnosis, Small and Medium Business Corporation, Seoul 150-718 (Korea, Republic of); Kim, Haekyoung [School of Materials Science and Engineering, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of); Oh, Kyeongseok [Department of Chemical and Environmental Technology, Inha Technical College, Incheon 402-752 (Korea, Republic of); Kim, Hyun-Jong, E-mail: hjkim23@kitech.re.kr [Surface Technology R& BD Group, Korea Institute of Industrial Technology (KITECH), Incheon 406-840 (Korea, Republic of)

    2015-09-25

    Highlights: • Low-temperature pressurized polyol method synthesized Al-doped ZnO nanoclusters. • Reaction time affected the doping efficiency, resistivity, and NIR transmittance. • The near-IR blocking efficiency of Al-doped ZnO (AZO) nanoclusters reached 85%. • AZO nanocluster coatings could be used for heat reflectors or artificial glasses. - Abstract: In this study, a novel pressurized polyol method is proposed to synthesize aluminum-doped ZnO (AZO) nanoclusters without utilizing additional thermal treatment to avoid the merging of nanoclusters. The size of the AZO nanoclusters range from 100 to 150 nm with a resistivity of 204 Ω cm. The AZO nanoclusters primarily consist of approximately 10-nm nanocrystals that form a spherically clustered morphology. A two-stage growth model has been proposed based on the results of scanning electron microscopy and transmission electron microscopy images, nanocluster sizes, and X-ray diffraction patterns. The primary AZO nanocrystals first nucleate under pressurized conditions and then spontaneously aggregate into larger nanoclusters. Optically, the AZO nanoclusters exhibit a significant decrease in the near-infrared (NIR) transmittance compared to pure ZnO nanoparticles. The NIR blocking efficiency of AZO nanoclusters reached 85%. Moreover, the doping efficiency, resistivity, and NIR transmittance of AZO nanoclusters are influenced by the reaction time in the pressurized polyol solution. On the other hand, the reaction time has no effect on the particle size and crystallinity. An optically transparent coating for the AZO nanoclusters, which consisted of iso-propanol solvent and ultraviolet-curable acrylic binder, was also demonstrated.

  3. Study on the enhanced and stable field emission behavior of a novel electrosprayed Al-doped ZnO bilayer film

    KAUST Repository

    Mahmood, Khalid

    2014-01-01

    A novel electrosprayed bilayer film composed of an over-layer (L 2) of aluminium-doped ZnO (AZO) nanoflakes (NF-AZO) and a under-layer (L1) of AZO nanocrystallites structure (NC-AZO) named BL:NF/NC-AZO is studied as an excellent field-emitter. The XRD pattern demonstrated that the doped bilayer film has preferential growth along the c-axis with hexagonal wurtzite structure and the (0 0 2) peak shifted toward the larger angle side after doping. The lowest turn-on field of ∼2.8 V μm-1, highest emission current density of 1.95 mA cm-2 is obtained for BL:NF/NC-AZO under the field of 6.8 V μm-1 and as well as the highest field enhancement factor (β) is estimated to be 4370 ± 3, compared to pure ZnO bilayer film (BL:NF/NC-ZnO) and also better than NC-AZO film and possesses the excellent long term stability of emission current. The PL intensity of doped ZnO bilayer film is very much stronger than pure ZnO bilayer structure. The superior field emission properties are attributed to the better morphologies, Al-doping and better crystallinity of bilayer AZO films. © 2014 The Royal Society of Chemistry.

  4. Pure and Al-doped ZnO obtained by the modified Pechini method applied in ethanolic transesterification of cottonseed oil

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, M.F.; Silva-Neta, A.R.; Farias, A.F.F.; Souza, A.G.; Fonseca, M.G.; Pontes, L.F.B.L.; Santos, I.M.G., E-mail: ieda.garcia@pq.cnpq.br [Universidade Federal da Paraiba (LACOM/UFPB), Joao Pessoa, PB (Brazil). Dept. de Quimica

    2017-01-15

    Pure zinc oxide (ZnO) and 5% Al-doped ZnO (ZNAL) were synthesized using the modified Pechini method and characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF), Raman spectroscopy, infrared spectroscopy and UV-visible spectroscopy. XRF confirmed the theoretical stoichiometry, while XRD and Raman spectroscopy indicated that Al{sup 3+} was incorporated into the ZnO wurtzite lattice with no secondary phases, leading to a decrease in the band gap value and to a meaningful increase of the Lewis basic sites. Pure and doped ZnO were used as catalysts in the ethylic transesterification of cottonseed oil using a factorial design to determine the best synthesis conditions. Oil conversion into biodiesel was evaluated by viscosity measurements and {sup 1}H NMR spectroscopy. The results analyzed by factorial design indicated that the catalyst type and temperature were the determinant factors in the conversion indices. The highest basicity of the ZNAL lead to a significant increase of the catalytic potential, reaching a reduction of the oil viscosity next to 71% at 130 °C and greater than 85% at 200 °C. (author)

  5. Optimization design of transparent conductive Al-doped ZnO and mechanism for performance-enhancing GaN light emitting diodes

    Science.gov (United States)

    Yang, Yanqin; Li, Songzhan; Liu, Feng; Wang, Haoning; Long, Hao

    2018-01-01

    The current crowding effect is one of the key factors that reduce the performance of light emitting diodes (LEDs). The transparent Al-doped ZnO (AZO) film, which was employed as a current spreading layer for a GaN-based blue LED, had been prepared and optimized by adjusting deposition parameters. Experimental results showed an obvious enhancement of the electroluminescence performance of the LEDs by using the highly transparent and low-resistance AZO layer. The mechanisms were discussed on the basis of the optical and electrical characteristics. The ANSYS simulation analysis proved that the optimized AZO layer weakened the current crowding effect in the GaN-based blue LED.

  6. Controllable synthesis of flake-like Al-doped ZnO nanostructures and its application in inverted organic solar cells

    Directory of Open Access Journals (Sweden)

    Fan Xi

    2011-01-01

    Full Text Available Abstract Flake-like Al-doped ZnO (AZO nanostructures including dense AZO nanorods were obtained via a low-temperature (100°C hydrothermal process. By doping and varying Al concentrations, the electrical conductivity (σ and morphology of the AZO nanostructures can be readily controlled. The effect of σ and morphology of the AZO nanostructures on the performance of the inverted organic solar cells (IOSCs was studied. It presents that the optimized power conversion efficiency of the AZO-based IOSCs is improved by approximately 58.7% compared with that of un-doped ZnO-based IOSCs. This is attributed to that the flake-like AZO nanostructures of high σ and tunable morphology not only provide a high-conduction pathway to facilitate electron transport but also lead to a large interfacial area for exciton dissociation and charge collection by electrodes.

  7. High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation.

    Science.gov (United States)

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2016-12-01

    Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm(2)/Vs with an N of 2.22 × 10(20) cm(-3).

  8. Effect of Al and N Doping on Structural and Optical Properties of Sol-Gel Derived ZnO Thin Films

    International Nuclear Information System (INIS)

    Bangbai, C.; Chongsri, K.; Pecharapa, W.; Techitdheera, W.

    2013-01-01

    In this work, the preparation of ZnO, N-doped ZnO (NZO), Al-doped ZnO (AZO) and Al, N-doped ZnO (ANZO) thin films by the sol-gel spin-coating method is reported. The structural properties and surface morphologies of films were characterized by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optical properties of the films were interpreted from their transmission spectra using UV-VIS spectrophotometer. The XRD and SEM results disclosed that the crystallization quality and grain size of as-prepared films were highly influenced by N and Al doping. UV-VIS spectrophotometer results indicated that Al and N additives could significantly enhance the optical transparency and induce the blue-shift in optical bandgap of ZnO films. (author)

  9. Flexible Al-doped ZnO films grown on PET substrates using linear facing target sputtering for flexible OLEDs

    International Nuclear Information System (INIS)

    Jeong, Jin-A; Shin, Hyun-Su; Choi, Kwang-Hyuk; Kim, Han-Ki

    2010-01-01

    We report the characteristics of flexible Al-doped zinc oxide (AZO) films prepared by a plasma damage-free linear facing target sputtering (LFTS) system on PET substrates for use as a flexible transparent conducting electrode in flexible organic light-emitting diodes (OLEDs). The electrical, optical and structural properties of LFTS-grown flexible AZO electrodes were investigated as a function of dc power. We obtained a flexible AZO film with a sheet resistance of 39 Ω/□ and an average transmittance of 84.86% in the visible range although it was sputtered at room temperature without activation of the Al dopant. Due to the effective confinement of the high-density plasma between the facing AZO targets, the AZO film was deposited on the PET substrate without plasma damage and substrate heating caused by bombardment of energy particles. Moreover, the flexible OLED fabricated on the AZO/PET substrate showed performance similar to the OLED fabricated on a ITO/PET substrate in spite of a lower work function. This indicates that LFTS is a promising plasma damage-free and low-temperature sputtering technique for deposition of flexible and indium-free AZO electrodes for use in cost-efficient flexible OLEDs.

  10. Structural, Optical and Electrical Properties of Transparent Conducting Oxide Based on Al Doped ZnO Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    Abdeslam DOUAYAR

    2014-05-01

    Full Text Available Aluminum doped zinc oxide (AZO thin films were deposited on glass substrates at 350 °C by spray pyrolysis technique. X-ray diffraction patterns show that the undoped and AZO films exhibit the hexagonal wűrtzite crystal structure with a preferential orientation along 2 direction. AFM images showed that AZO film with 3 % of Al has a uniform grain sizes with a surface roughness of about 24 nm. All films present a high transmittance in the visible range. Both undoped and AZO films were n-type degenerate semiconductor and the best electrical resistivity value was around 8.0 ´ 10- 2 W.cm obtained for 3 % Al content.

  11. Ga and Al doped zinc oxide thin films for transparent conducting oxide applications: Structure-property correlations

    Science.gov (United States)

    Temizer, Namik K.; Nori, Sudhakar; Narayan, Jagdish

    2014-01-01

    We report a detailed investigation on the structure-property correlations in Ga and Al codoped ZnO films on c-sapphire substrates where the thin film microstructure varies from nanocrystalline to single crystal. We have achieved highly epitaxial films with very high optical transmittance (close to 90%) and low resistivity (˜110 μΩ-cm) values. The films grown in an ambient oxygen partial pressure (PO2) of 5 × 10-2 Torr and at growth temperatures from room temperature to 600 °C show semiconducting behavior, whereas samples grown at a PO2 of 1 × 10-3 Torr show metallic nature. The most striking feature is the occurrence of resistivity minima at relatively high temperatures around 110 K in films deposited at high temperatures. The measured optical and transport properties were found to be a strong function of growth conditions implying that the drastic changes are brought about essentially by native point defects. The structure-property correlations reveal that point defects play an important role in modifying the structural, optical, electrical, and magnetic properties and such changes in physical properties are controlled predominantly by the defect content.

  12. Inverted Organic Solar Cells with Low-Temperature Al-Doped-ZnO Electron Transport Layer Processed from Aqueous Solution

    Directory of Open Access Journals (Sweden)

    Qianni Zhang

    2018-01-01

    Full Text Available The aqueous-based Zn-ammine complex solutions represent one of the most promising routes to obtain the ZnO electron transport layer (ETL at a low temperature in inverted organic solar cells (OSCs. However, to dope the ZnO film processed from the Zn-ammine complex solutions is difficult since the introduction of metal ions into the Zn-ammine complex is a nontrivial process as ammonium hydroxide tends to precipitate metal salts due to acid-base neutralization reactions. In this paper, we investigate the inverted OSCs with Al-doped-ZnO ETL made by immersion of metallic Al into the Zn-ammine precursor solution. The effects of ZnO layer with different immersion time of Al on film properties and solar cell performance have been studied. The results show that, with the Al-doped-ZnO ETL, an improvement of the device performance could be obtained compared with the device with the un-doped ZnO ETL. The improved device performance is attributed to the enhancement of charge carrier mobility leading to a decreased charge carrier recombination and improved charge collection efficiency. The fabricated thin film transistors with the same ZnO or AZO films confirm the improved electrical characteristics of the Al doped ZnO film.

  13. Characteristics of Carrier Transport and Crystallographic Orientation Distribution of Transparent Conductive Al-Doped ZnO Polycrystalline Films Deposited by Radio-Frequency, Direct-Current, and Radio-Frequency-Superimposed Direct-Current Magnetron Sputtering.

    Science.gov (United States)

    Nomoto, Junichi; Inaba, Katsuhiko; Kobayashi, Shintaro; Watanabe, Takeshi; Makino, Hisao; Yamamoto, Tetsuya

    2017-08-09

    We investigated the characteristics of carrier transport and crystallographic orientation distribution in 500-nm-thick Al-doped ZnO (AZO) polycrystalline films to achieve high-Hall-mobility AZO films. The AZO films were deposited on glass substrates at 200 °C by direct-current, radio-frequency, or radio-frequency-superimposed direct-current magnetron sputtering at various power ratios. We used sintered AZO targets with an Al₂O₃ content of 2.0 wt. %. The analysis of the data obtained by X-ray diffraction, Hall-effect, and optical measurements of AZO films at various power ratios showed that the complex orientation texture depending on the growth process enhanced the contribution of grain boundary scattering to carrier transport and of carrier sinks on net carrier concentration, resulting in the reduction in the Hall mobility of polycrystalline AZO films.

  14. Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

    Science.gov (United States)

    Macco, B.; Deligiannis, D.; Smit, S.; van Swaaij, R. A. C. M. M.; Zeman, M.; Kessels, W. M. M.

    2014-12-01

    In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by atomic layer deposition (ALD). It is shown that the ALD process, as opposed to sputtering, does not impair the chemical passivation. However, the field-effect passivation is reduced by the ZnO:Al. The resulting decrease in low injection-level lifetime can be tuned by changing the ZnO:Al doping level (carrier density = 7 × 1019-7 × 1020 cm-3), which is explained by a change in the TCO workfunction. Additionally, it is shown that a ˜10-15 nm ALD ZnO:Al layer is sufficient to mitigate damage to the a-Si:H by subsequent sputtering, which is correlated to ALD film closure at this thickness.

  15. Effect of Pre-Annealing on Thermal and Optical Properties of ZnO and Al-ZnO Thin Films

    Science.gov (United States)

    Saravanan, P.; Gnanavelbabu, A.; Pandiaraj, P.

    Zinc oxide (ZnO) nanoparticles were synthesized by a simple solution route method using zinc acetate as the precursor and ethanol as the solvent. At a temperature of 60∘C, a clear homogenous solution is heated to 100∘C for ethanol evaporation. Then the obtained precursor powder is annealed at 600∘C for the formation of ZnO nanocrystalline structure. Doped ZnO particle is also prepared by using aluminum nitrate nonahydrate to produce aluminum (Al)-doped nanoparticles using the same solution route method followed by annealing. Thin film fabrication is done by air evaporation method using the polymer polyvinyl alcohol (PVA). To analyze the optical and thermal properties for undoped and doped ZnO nanocrystalline thin film by precursor annealing, characterizations such as UV, FTIR, AFM, TGA/DTA, XRD, EDAX and Photoluminescence (PL) were also taken. It was evident that precursor annealing had great influence on thermal and optical properties of thin films while ZnO and AZO film showed low crystallinity and intensity than in the powder form. TGA/DTA suggests pre-annealing effect improves the thermal stability, which ensures that Al ZnO nanoparticle can withstand at high temperature too which is the crucial advantage in the semiconductor devices. UV spectroscopy confirmed the presence of ZnO nanoparticles in the thin film by an absorbance peak observed at 359nm with an energy bandgap of 3.4eV. A peak obtained at 301nm with an energy bandgap of 4.12eV shows a blue shift due to the presence of Al-doped ZnO nanoparticles. Both ZnO and AZO bandgap increased due to precursor annealing. In this research, PL spectrum is also studied in order to determine the optical property of the nanoparticle embedded thin film. From PL spectrum, it is observed that the intensity of the doped ZnO is much more enhanced as the dopant concentration is increased to 1wt.% and 2wt.% of Al in ZnO.

  16. An Al-doped ZnO electrode grown by highly efficient cylindrical rotating magnetron sputtering for low cost organic photovoltaics

    International Nuclear Information System (INIS)

    Park, Jun-Hyuk; Kim, Han-Ki; Ahn, Kyung-Jun; Park, Kang-Il; Na, Seok-In

    2010-01-01

    We report the characteristics of Al-doped zinc oxide (AZO) films prepared by a highly efficient cylindrical rotating magnetron sputtering (CRMS) system for use as a transparent conducting electrode in cost-efficient bulk hetero-junction organic solar cells (OSCs). Using a rotating cylindrical type cathode with an AZO target, whose usage was above 80%, we were able to obtain a low cost and indium free AZO electrode with a low sheet resistance of ∼4.59 Ω/sq, a high transparency of 85% in the visible wavelength region and a work function of 4.9 eV at a substrate temperature of 230 0 C. Moreover, the neutral poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) based OSC fabricated on the CRMS-grown AZO electrode at 230 0 C showed an open circuit voltage of 0.5 V, a short circuit current of 8.94 mA cm -2 , a fill factor of 45% and power conversion efficiency of 2.01%, indicating that CRMS is a promising cost-efficient AZO deposition technique for low cost OSCs.

  17. Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Volintiru, I.; Creatore, M.; Kniknie, B. J.; Spee, C. I. M. A.; Sanden, M. C. M. van de

    2007-01-01

    Al-doped zinc oxide (AZO) films were deposited by means of remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/diethylzinc/trimethylaluminum mixtures. The electrical, structural (crystallinity and morphology), and chemical properties of the deposited films were investigated using Hall, four point probe, x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), electron recoil detection (ERD), Rutherford backscattering (RBS), and time of flight secondary ion mass spectrometry (TOF-SIMS), respectively. We found that the working pressure plays an important role in controlling the sheet resistance R s and roughness development during film growth. At 1.5 mbar the AZO films are highly conductive (R s 4% of the film thickness), however, they are characterized by a large sheet resistance gradient with increasing film thickness. By decreasing the pressure from 1.5 to 0.38 mbar, the gradient is significantly reduced and the films become smoother, but the sheet resistance increases (R s ≅100 Ω/□ for a film thickness of 1000 nm). The sheet resistance gradient and the surface roughness development correlate with the grain size evolution, as determined from the AFM and SEM analyses, indicating the transition from pyramid-like at 1.5 mbar to pillar-like growth mode at 0.38 mbar. The change in plasma chemistry/growth precursors caused by the variation in pressure leads to different concentration and activation efficiency of Al dopant in the zinc oxide films. On the basis of the experimental evidence, a valid route for further improving the conductivity of the AZO film is found, i.e., increasing the grain size at the initial stage of film growth

  18. Al-doped ZnO films deposited by magnetron sputtering: effect of sputtering parameters on the electrical and optical properties

    Directory of Open Access Journals (Sweden)

    Pan Qingtao

    2017-07-01

    Full Text Available Aluminum-doped zinc oxide (AZO thin films were prepared by magnetron sputtering method. The influences of deposition pressure, substrate temperature, Ar flow rate and film thickness on optical and electrical properties were investigated using ultraviolet-visible (UV-Vis spectrometer and Hall measurements. The experimental results revealed that a low resistivity, smaller than 4 × 10-4 Ω·cm, was obtained when the deposition pressure was smaller than 0.67 Pa and substrate temperature about 200 °C. Ar flow rate had a small influence on the resistivity but a big influence on the transparency at near infrared range (NIR. We obtained optimized AZO thin films with high ponductivity and transparency at low deposition pressure, small Ar flow and appropriate temperature (around 200 °C. The etching behavior of the AZO thin films deposited at the different Ar flow rates was also studied in this paper. The results show that Ar flow rate is a very important factor affecting the etching behavior.

  19. ZnO Thin Film Electronics for More than Displays

    Science.gov (United States)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  20. A high power ZnO thin film piezoelectric generator

    Science.gov (United States)

    Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

    2016-02-01

    A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

  1. Thin films of conductive ZnO patterned by micromolding resulting in nearly isolated features

    NARCIS (Netherlands)

    Göbel, Ole; Blank, David H.A.; ten Elshof, Johan E.

    2010-01-01

    Patterned and continuous thin films of conductive Al-doped zinc oxide (ZnO:Al) were prepared on different substrates from a polymeric precursor solution. Their electric conductivity and light transmittance (for visible and UV light) was measured at room temperature. By means of a simple device,

  2. Influence of pH on ZnO nanocrystalline thin films prepared by sol ...

    Indian Academy of Sciences (India)

    Abstract. ZnO nanocrystalline thin films have been prepared on glass substrates by sol–gel dip coating method. ZnO thin films have been coated at room temperature and at four different pH values of 4, 6, 8 and 10. The. X-ray diffraction pattern showed that ZnO nanocrystalline thin films are of hexagonal structure and the ...

  3. Some physical properties of ZnO thin films prepared by RF sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Ekem, N.; Korkmaz, S.; Pat, S.; Cetin, E.N.; Ozmumcu, M. [Eskisehir Osmangazi University, Physics Department, 26480 Meselik, Eskisehir (Turkey); Balbag, M.Z. [Eskisehir Osmangazi University, Education Faculty, Physics Education, 26480 Meselik, Eskisehir (Turkey)

    2009-06-15

    ZnO thin films were deposited with RF sputtering using pure Zn target. In order to generate oxidation process of Zn, Ar:O{sub 2} gas mixing in (9:1), (7:3) and (5:5) ratios of Ar:O{sub 2} was used. To characterize ZnO thin films thickness and transparency were measured using optical method, and refractive index and band gap energies were calculated. Electrical conductivity of the ZnO thin films was also determined. AFM images were used to determine surface morphology of produced ZnO thin films. (author)

  4. Analysis of Li-related defects in ZnO thin films influenced by ...

    Indian Academy of Sciences (India)

    Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and in situ annealing under O2 or Ar ambient. Li-related defects in ZnO films strongly depend on the annealing ambient. AFM and XRD indicated that ZnO films possessed a good crystallinity with -axis orientation, uniform ...

  5. Structural and optical properties of ZnO thin films prepared by laser ...

    Indian Academy of Sciences (India)

    2017-06-09

    Jun 9, 2017 ... Abstract. ZnO thin films were deposited on ITO/glass substrates by pulsed laser deposition (PLD) using two different kinds of targets. One of the targets was made of pure ZnO powder and the other one consisted of a mixture of ZnO powder with cyanoacrylate glue. The structural and morphological ...

  6. Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong Jun [Department of Nano-Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-701 (Korea, Republic of); Lee, Ho Seok [Department of Materials Science and Engineering, Korea University, 5-1 Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Noh, Jin-Seo, E-mail: jinseonoh@gachon.ac.kr [Department of Nano-Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 461-701 (Korea, Republic of)

    2016-03-31

    Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates have been investigated in the very thin thickness range of 20 to 120 nm. In this thickness range, the electrical resistance of ZnO film increased with an increase in film thickness. This unusual transition behavior was explained in terms of structural evolution from Zn-phase-incorporating non-crystalline ZnO to hexagonal-structured ZnO. A critical thickness for the full development of hexagonal ZnO crystal was estimated at approximately 80 nm in this study. ZnO thin films on PET substrates exhibit a high optical transmittance of > 70% and good endurance to bending cycles over the measured thickness range. The results of this study indicate that a trade-off should be sought between structural, electrical, optical, and mechanical properties for practical applications of very thin ZnO films on organic substrates. - Highlights: • Very thin ZnO films were sputter-deposited on the PET substrate. • The ZnO film resistance increases with an increase in film thickness until saturation. • Hexagonal crystal structures gradually develop with increasing film thickness. • A Zn phase appears in a 20-nm-thick ZnO film. • ZnO films show high optical transmittance of > 80% and good endurance to bending.

  7. Transient behaviors of ZnO thin films on a transparent, flexible polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Kim, Yong Jun; Lee, Ho Seok; Noh, Jin-Seo

    2016-01-01

    Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates have been investigated in the very thin thickness range of 20 to 120 nm. In this thickness range, the electrical resistance of ZnO film increased with an increase in film thickness. This unusual transition behavior was explained in terms of structural evolution from Zn-phase-incorporating non-crystalline ZnO to hexagonal-structured ZnO. A critical thickness for the full development of hexagonal ZnO crystal was estimated at approximately 80 nm in this study. ZnO thin films on PET substrates exhibit a high optical transmittance of > 70% and good endurance to bending cycles over the measured thickness range. The results of this study indicate that a trade-off should be sought between structural, electrical, optical, and mechanical properties for practical applications of very thin ZnO films on organic substrates. - Highlights: • Very thin ZnO films were sputter-deposited on the PET substrate. • The ZnO film resistance increases with an increase in film thickness until saturation. • Hexagonal crystal structures gradually develop with increasing film thickness. • A Zn phase appears in a 20-nm-thick ZnO film. • ZnO films show high optical transmittance of > 80% and good endurance to bending.

  8. Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

    KAUST Repository

    Wang, Xudong

    2009-02-05

    This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed in comparison with the growth of ZnO nanowires. The ZnO mesoporous film was successfully applied as a gas sensor. The fabrication and growth analysis of the mesoporous ZnO thin film gi ve general guidance for the controlled growth of nanostructures. It also pro vides a unique structure with a superhigh surface-to-volume ratio for surface-related applications. © 2009 American Chemical Society.

  9. Surface Engineering of ZnO Thin Film for High Efficiency Planar Perovskite Solar Cells

    Science.gov (United States)

    Tseng, Zong-Liang; Chiang, Chien-Hung; Wu, Chun-Guey

    2015-09-01

    Sputtering made ZnO thin film was used as an electron-transport layer in a regular planar perovskite solar cell based on high quality CH3NH3PbI3 absorber prepared with a two-step spin-coating. An efficiency up to 15.9% under AM 1.5G irradiation is achieved for the cell based on ZnO film fabricated under Ar working gas. The atmosphere of the sputtering chamber can tune the surface electronic properties (band structure) of the resulting ZnO thin film and therefore the photovoltaic performance of the corresponding perovskite solar cell. Precise surface engineering of ZnO thin film was found to be one of the key steps to fabricate ZnO based regular planar perovskite solar cell with high power conversion efficiency. Sputtering method is proved to be one of the excellent techniques to prepare ZnO thin film with controllable properties.

  10. Two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films

    International Nuclear Information System (INIS)

    Xu, Linhua; Zheng, Gaige; Zhao, Lilong; Pei, Shixin

    2015-01-01

    Ag-doped ZnO thin films were prepared by a sol–gel method. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), UV–vis and photoluminescence spectra. The results show that the Ag in the ZnO thin films annealed at 500 °C for 1 h substitutes for Zn and exists in the form of Ag + ion (Ag Zn ) while the Ag in the ZnO thin films without a post-annealing mainly exists in the form of simple substance (Ag 0 ). The incorporation of Ag indeed can improve the ultraviolet emission of ZnO thin films and suppress the visible emissions at the same time. However, the mechanisms on the ultraviolet emission enhancement in the annealed and unannealed Ag-doped ZnO thin films are very different. As for the post-annealed Ag-doped ZnO thin films, the UV emission enhancement maybe mainly results from more electron–hole pairs (excitons) due to Ag-doping while for the unannealed Ag-doped ZnO thin films; the UV emission enhancement is attributed to the resonant coupling between exciton emission in ZnO and localized surface plasmon in Ag nanoparticles. - Highlights: • Ag-doped ZnO thin films have been prepared by the sol–gel method. • Ag-doping can enhance ultraviolet emission of ZnO thin films and depress the visible emissions at the same time. • There are two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films. • The UV emission enhancement from the resonant coupling between excitonic emissions and localized surface plasmon in Ag nanoparticle is very attractive

  11. ZnO thin films prepared by surfatron produced discharge

    Czech Academy of Sciences Publication Activity Database

    Olejníček, Jiří; Šmíd, Jiří; Čada, Martin; Kment, Š.; Churpita, Olexandr; Kšírová, Petra; Brunclíková, Michaela; Adámek, Petr; Kohout, Michal; Valvoda, V.; Chvostová, Dagmar; Zlámal, M.; Hubička, Zdeněk

    2014-01-01

    Roč. 230, Jul (2014), s. 119-124 ISSN 0920-5861 R&D Projects: GA TA ČR TA01011740; GA MŠk LH12045; GA ČR GAP108/12/1941; GA ČR(CZ) GAP205/11/0386 Grant - others:GACR(CZ) GP13-29241P Institutional support: RVO:68378271 Keywords : ZnO * surfatron * thin films * Langmuir probe * plasma density Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 3.893, year: 2014

  12. Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films

    International Nuclear Information System (INIS)

    Gürbüz, Osman; Kurt, İsmail; Çalışkan, Serkan; Güner, Sadık

    2015-01-01

    Highlights: • RF magnetron sputtering technique seems to be very efficient method for fabrication of Al doped ZnO (AZO) films. • Long range single crystalline structure improves with annealing process. • Optical properties became much better after annealing process especially for the AZO films that include high Al concentration. • Much greater conductivity with increasing Al concentration and annealing process. • AZO films have potential applicability in spintronic devices. - Abstract: The pure ZnO and Al-doped ZnO (AZO) thin films (thickness: 200 nm) were prepared on both side polished silica (SiO 2 ) substrates via RF magnetron sputtering at room temperature by using 2.5 inches high-purity ZnO (99.9%) and Al (99.9%) targets. The samples were annealed at 300 °C, 400 °C and 500 °C for 45 min in N 2 ambient in quartz annealing furnace system, respectively. We investigated the effects of various Al concentrations and annealing treatment on the structural, electrical, and optical properties of films. The preferred crystallization was observed along c axis (single (0 0 2) diffraction peak) from substrate surface assigning the single crystalline Würtzite lattice for pure ZnO and AZO thin films. Although increasing Al concentration decreases the order of crystallization of as-grown films, annealing process increases the long range crystal order. The crystallite sizes vary between minimum 12.98 nm and maximum 20.79 nm for as-grown and annealed samples. The crystallite sizes decrease with increasing Al concentration but increase with increasing annealing temperature as general trend. The grain size and porosity of films change with annealing treatment. The smaller grains coalesce together to form larger grains for many films. However, a reverse behavior is seen for Al 2.23 ZnO and Al 12.30 ZnO samples. That is, Al concentration plays critical role as well as temperature on grain size. Low percent optical transmittance (T%) is observed due to higher Al

  13. Mott-Schottky analysis of thin ZnO films

    International Nuclear Information System (INIS)

    Windisch, Charles F. Jr.; Exarhos, Gregory J.

    2000-01-01

    Thin ZnO films, both native and doped with secondary metal ions, have been prepared by sputter deposition and also by casting from solutions containing a range of precursor salts. The conductivity and infrared reflectivity of these films are subsequently enhanced chemically following treatment in H 2 gas at 400 degree sign C or by cathodic electrochemical treatment in a neutral (pH=7) phosphate buffer solution. While Hall-type measurements usually are used to evaluate the electrical properties of such films, the present study investigated whether a conventional Mott-Schottky analysis could be used to monitor the change in concentration of free carriers in these films before and after chemical and electrochemical reduction. The Mott-Schottky approach would be particularly appropriate for electrochemically modified films since the measurements could be made in the same electrolyte used for the post-deposition electrochemical processing. Results of studies on sputtered pure ZnO films in ferricyanide solution were promising. Mott-Schottky plots were linear and gave free carrier concentrations typical for undoped semiconductors. Film thicknesses estimated from the Mott-Schottky data were also reasonably close to thicknesses calculated from reflectance measurements. Studies on solution-deposited films were less successful. Mott-Schottky plots were nonlinear, apparently due to film porosity. A combination of dc polarization and atomic force microscopy measurements confirmed this conclusion. The results suggest that Mott-Schottky analysis would be suitable for characterizing solution-deposited ZnO films only after extensive modeling was performed to incorporate the effects of film porosity on the characteristics of the space-charge region of the semiconductor. (c) 2000 American Vacuum Society

  14. Growth of ZnO thin films on GaAs by pulsed laser deposition

    NARCIS (Netherlands)

    Craciun, V.; Elders, J.; Gardeniers, Johannes G.E.; Geretovsky, J.; Boyd, Ian W.

    1995-01-01

    ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full

  15. Optoelectronic properties of doped hydrothermal ZnO thin films

    KAUST Repository

    Mughal, Asad J.

    2017-03-10

    Group III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.

  16. Direct current magnetron sputter-deposited ZnO thin films

    International Nuclear Information System (INIS)

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar

    2011-01-01

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  17. Study of working pressure on the optoelectrical properties of Al–Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

    International Nuclear Information System (INIS)

    Hsu, Feng-Hao; Wang, Na-Fu; Tsai, Yu-Zen; Chuang, Ming-Chieh; Cheng, Yu-Song; Houng, Mau-Phon

    2013-01-01

    Low cost transparent conductive Al–Y codoped ZnO (AZOY) thin-films were prepared on a glass substrate using a DC magnetron sputtering technique with various working pressures in the range of 5–13 mTorr. The relationship among the structural, electrical, and optical properties of sputtered AZOY films was studied as a function of working pressure. The XRD measurements show that the crystallinity of the films degraded as the working gas pressure increased. The AZOY thin-film deposited at a working pressure of 5 mTorr exhibited the lowest electrical resistivity of 4.3 × 10 −4 Ω cm, carrier mobility of 30 cm 2 /V s, highest carrier concentration of 4.9 × 10 20 cm −3 , and high transmittance in the visible region (400–800 nm) of approximately 90%. Compared with Al doped ZnO (AZO) thin-films deposited using DC or RF magnetron sputtering methods, a high carrier mobility was observed in our AZOY thin-films. This result can be used to effectively decrease the absorption of near infrared-rays in solar cell applications. The mechanisms are attributed to the larger transition energy between Ar atoms and sputtering particles and the size compensation of the dopants. Finally, the optimal quality AZOY thin-film was used as an emitter layer (or window layer) to form AZOY/n-Si heterojunction solar cells, which exhibited a stable conversion efficiency (η) of 9.4% under an AM1.5 illumination condition.

  18. Study of working pressure on the optoelectrical properties of Al–Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Feng-Hao [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, Dasyue Road, East District, Tainan City 701, Taiwan (China); Wang, Na-Fu; Tsai, Yu-Zen; Chuang, Ming-Chieh; Cheng, Yu-Song [Department of Electronic Engineering, Cheng Shiu University, 840 Chengcing Road, Niaosong District, Kaohsiung City 833, Taiwan (China); Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, Dasyue Road, East District, Tainan City 701, Taiwan (China)

    2013-09-01

    Low cost transparent conductive Al–Y codoped ZnO (AZOY) thin-films were prepared on a glass substrate using a DC magnetron sputtering technique with various working pressures in the range of 5–13 mTorr. The relationship among the structural, electrical, and optical properties of sputtered AZOY films was studied as a function of working pressure. The XRD measurements show that the crystallinity of the films degraded as the working gas pressure increased. The AZOY thin-film deposited at a working pressure of 5 mTorr exhibited the lowest electrical resistivity of 4.3 × 10{sup −4} Ω cm, carrier mobility of 30 cm{sup 2}/V s, highest carrier concentration of 4.9 × 10{sup 20} cm{sup −3}, and high transmittance in the visible region (400–800 nm) of approximately 90%. Compared with Al doped ZnO (AZO) thin-films deposited using DC or RF magnetron sputtering methods, a high carrier mobility was observed in our AZOY thin-films. This result can be used to effectively decrease the absorption of near infrared-rays in solar cell applications. The mechanisms are attributed to the larger transition energy between Ar atoms and sputtering particles and the size compensation of the dopants. Finally, the optimal quality AZOY thin-film was used as an emitter layer (or window layer) to form AZOY/n-Si heterojunction solar cells, which exhibited a stable conversion efficiency (η) of 9.4% under an AM1.5 illumination condition.

  19. Piezoelectric Response Evaluation of ZnO Thin Film Prepared by RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Cheng Da-Long

    2017-01-01

    Full Text Available The most important parameter of piezoelectric materials is piezoelectric coefficient (d33. In this study, the piezoelectric ZnO thin films were deposited on the SiNx/Si substrate. The 4 inches substrate is diced into 8 cm× 8 cm piece. During the deposition process, a zinc target (99.999 wt% of 2 inches diameter was used. The vertical distance between the target and the substrate holder was fixed at 5 cm. The piezoelectric response of zinc oxide (ZnO thin films were obtained by using a direct measurement system. The system adopts a mini impact tip to generate an impulsive force and read out the piezoelectric signals immediately. Experimentally, a servo motor is used to produce a fixed quantity of force, for giving an impact against to the piezoelectric film. The ZnO thin films were deposited using the reactive radio frequency (RF magnetron sputtering method. The electric charges should be generated because of the material’s extrusion. This phenomenon was investigated through the oscilloscope by one shot trigger. It was apparent that all ZnO films exhibit piezoelectric responses evaluated by our measurement system, however, its exhibit a significant discrepancy. The piezoelectric responses of ZnO thin film at various deposition positions were measured and the crystal structures of the sputtering pressure were also discussed. The crystalline characteristics of ZnO thin films are investigated through the XRD and SEM. The results show the ZnO thin film exhibits good crystalline pattern and surface morphology with controlled sputtering condition. The ZnO thin films sputtered using 2 inches target present various piezoelectric responses. With the exactly related position, a best piezoelectric response of ZnO thin film can be achieved.

  20. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    Six decades of research on ZnO has recently sprouted a new branch in the domain of resistive random access memories. Highly resistive and c-axis oriented ZnO thin films were grown by us using d.c. discharge assisted pulsed laser deposition on Pt/Ti/SiO2/Si substrates at room temperature. The resistive switching ...

  1. Structural, optical and electrical properties of ZnO thin films prepared ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. ZnO thin films have been prepared using zinc acetate precursor by spray pyrolytic decomposition of zinc acetate on glass substrates at 450 °C. Effect of precursor concentration on structural and optical pro- perties has been investigated. ZnO films are polycrystalline with (002) plane as preferential orientation. The.

  2. Heavy lithium-doped ZnO thin films prepared by spray pyrolysis ...

    Indian Academy of Sciences (India)

    Lithium-doped ZnO thin films (ZnO : Li) were prepared by spray pyrolysis method on the glass substrates for ( = [Li]/[Zn]) value varied between 5 and 70%. Structural, electrical and optical properties of the samples were studied by X-ray diffraction (XRD), UV–Vis–NIR spectroscopy, scanning electron microscopy (SEM), ...

  3. Enhanced photocurrent and photocatalytic properties of porous ZnO thin film by Ag nanoparticles

    Science.gov (United States)

    Lv, Jianguo; Zhu, Qianqian; Zeng, Zheng; Zhang, Miao; Yang, Jin; Zhao, Min; Wang, Wenhao; Cheng, Yuebing; He, Gang; Sun, Zhaoqi

    2017-12-01

    ZnO thin films were deposited using an electrodeposition method and porous morphologies could be achieved by annealing treatment. A variety of Ag nanoparticles were loaded on the surface of the ZnO thin films. Surface morphology, chemical composition, crystal phase and optical properties were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), UV-vis spectrophotometer and micro-Raman spectroscopy. Evidence of Ag nanoparticles on the Ag-4/ZnO thin film was be verified by the SEM and XPS measurements. The XRD results indicated that the Ag nanoparticles had little effect on crystallinity of the thin films. The photoresponse and photocatalytic results indicated that the photocurrent and photocatalytic performance could be enhanced by moderate Ag nanoparticles modification on the surface of the ZnO thin film. The best photoresponse and photocatalytic activity in Ag-4/ZnO thin film results from the moderate Ag nanoparticles on the surface of ZnO thin film, which could enhanced separation and suppressed recombination of photogenerated electron-hole pairs.

  4. Selective growth of ZnO thin film nanostructures: Structure, morphology and tunable optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Krishnakanth, Katturi Naga; Sunandana, C. S. [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Rajesh, Desapogu, E-mail: rajesh.esapogu@gmail.com, E-mail: mperd@nus.edu.sg [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Dept. of Mechanical Engineering, National University of Singapore (Singapore)

    2016-05-23

    The ZnO nanostructures (spherical, rod shape) have been successfully fabricated via a thermal evaporation followed by dip coating method. The pure, doped ZnO thin films were characterized by X-ray powder diffraction (XRD) and field emission scanning electron microscopy (FESEM) and UV-Vis spectroscopy, respectively. A possible growth mechanism of the spherical, rod shape ZnO nanostructures are discussed. XRD patterns revealed that all films consist of pure ZnO phase and were well crystallized with preferential orientation towards (002) direction. Doping by PVA, PVA+Cu has effective role in the enhancement of the crystalline quality and increases in the band gap.

  5. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    Directory of Open Access Journals (Sweden)

    Shao-Ying Ting

    2012-01-01

    Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

  6. Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film

    International Nuclear Information System (INIS)

    Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N.

    2007-01-01

    The authors studied the growth and wet thermal oxidation (WTO) of ZnO thin films using a radio-frequency magnetron sputtering technique. X-ray diffraction reveals a preferred orientation of [1010]ZnO(0002)//[1120]Al 2 O 3 (0002) coexisted with a small amount of ZnO (1011) and ZnO (1013) crystals on the Al 2 O 3 (0001) substrate. The ZnO (1011) and ZnO (1013) crystals, as well as the in-plane preferred orientation, are absent from the growth of ZnO on the GaAs(001) substrate. WTO at 550 deg. C improves the crystalline and the photoluminescence more significantly than annealing in air, N 2 and O 2 ambient; it also tends to convert the crystal from ZnO (1011) and ZnO (1013) to ZnO (0002). The evolution of the photoluminescence upon WTO and annealing reveals that the green and orange emissions, centered at 520 and 650 nm, are likely originated from oxygen vacancies and oxygen interstitials, respectively; while the 420 nm emission, which is very sensitive to the postgrowth thermal processing regardless of the substrate and the ambient gas, is likely originated from the surface-state related defects

  7. Surface Engineering of ZnO Thin Film for High Efficiency Planar Perovskite Solar Cells

    OpenAIRE

    Tseng, Zong-Liang; Chiang, Chien-Hung; Wu, Chun-Guey

    2015-01-01

    Sputtering made ZnO thin film was used as an electron-transport layer in a regular planar perovskite solar cell based on high quality CH3NH3PbI3 absorber prepared with a two-step spin-coating. An efficiency up to 15.9% under AM 1.5G irradiation is achieved for the cell based on ZnO film fabricated under Ar working gas. The atmosphere of the sputtering chamber can tune the surface electronic properties (band structure) of the resulting ZnO thin film and therefore the photovoltaic performance o...

  8. Effect of ZnO Nanostructured Thin Films on Pseudomonas Putida Cell Division

    Science.gov (United States)

    Ivanova, I.; Lukanov, A.; Angelov, O.; Popova, R.; Nichev, H.; Mikli, V.; Dimova-Malinovska, Doriana; Dushkin, C.

    In this report we study the interaction between the bacteria Pseudomonas putida and nanostructured ZnO and ZnO:H thin films prepared by magnetron sputtering of a ZnO target. The nanostructured ZnO and ZnO:H thin films possess some biological-active properties when in contact with bacteria. Our experimental data show that these films have no destructive effect on the cell division of Pseudomonas putida in poor liquid medium and can be applied in biosensor devices.

  9. Recent advances in ZnO nanostructures and thin films for biosensor applications: Review

    International Nuclear Information System (INIS)

    Arya, Sunil K.; Saha, Shibu; Ramirez-Vick, Jaime E.; Gupta, Vinay; Bhansali, Shekhar; Singh, Surinder P.

    2012-01-01

    Graphical abstract: ZnO nanostructures have shown binding of biomolecules in desired orientation with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, their compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes them suitable candidate for future small integrated biosensor devices. This review highlights various approaches to synthesize ZnO nanostructures and thin films, and their applications in biosensor technology. Highlights: ► This review highlights various approaches to synthesize ZnO nanostructures and thin films. ► Article highlights the importance of ZnO nanostructures as biosensor matrix. ► Article highlights the advances in various biosensors based on ZnO nanostructures. ► Article describes the potential of ZnO based biosensor for new generation healthcare devices. - Abstract: Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO nanostructures suitable candidate for future small integrated biosensor devices. This review

  10. Superhydrophobic Ag decorated ZnO nanostructured thin film as effective surface enhanced Raman scattering substrates

    Science.gov (United States)

    Jayram, Naidu Dhanpal; Sonia, S.; Poongodi, S.; Kumar, P. Suresh; Masuda, Yoshitake; Mangalaraj, D.; Ponpandian, N.; Viswanathan, C.

    2015-11-01

    The present work is an attempt to overcome the challenges in the fabrication of super hydrophobic silver decorated zinc oxide (ZnO) nanostructure thin films via thermal evaporation process. The ZnO nanowire thin films are prepared without any surface modification and show super hydrophobic nature with a contact angle of 163°. Silver is further deposited onto the ZnO nanowire to obtain nanoworm morphology. Silver decorated ZnO (Ag@ZnO) thin films are used as substrates for surface enhanced Raman spectroscopy (SERS) studies. The formation of randomly arranged nanowire and silver decorated nanoworm structure is confirmed using FESEM, HR-TEM and AFM analysis. Crystallinity and existence of Ag on ZnO are confirmed using XRD and XPS studies. A detailed growth mechanism is discussed for the formation of the nanowires from nanobeads based on various deposition times. The prepared SERS substrate reveals a reproducible enhancement of 3.082 × 107 M for Rhodamine 6G dye (R6G) for 10-10 molar concentration per liter. A higher order of SERS spectra is obtained for a contact angle of 155°. Thus the obtained thin films show the superhydrophobic nature with a highly enhanced Raman spectrum and act as SERS substrates. The present nanoworm morphology shows a new pathway for the construction of semiconductor thin films for plasmonic studies and challenges the orderly arranged ZnO nanorods, wires and other nano structure substrates used in SERS studies.

  11. Photoluminescence of ZnO thin films deposited at various substrate temperatures

    International Nuclear Information System (INIS)

    Kao, Kuo-Sheng; Shih, Wei-Che; Ye, Wei-Tsuen; Cheng, Da-Long

    2016-01-01

    This study investigated surface acoustic wave devices with an Al/ZnO/Si structure for use in ultraviolet sensors. ZnO thin films were fabricated using a reactive radio frequency magnetron sputtering system. The substrate temperature of ZnO thin films can be varied to obtain highly crystalline properties. The surface morphologies and c-axis preferred orientation of the ZnO thin films were determined using scanning electron microscopy and X-ray diffraction. In addition, bright-field images of ZnO crystallization were investigated using a transmission electron microscope. From photoluminescence analysis, four peaks were obtained at 377.8, 384.9, 391.4, and 403.4 nm. Interdigital transducers of an aluminum electrode were fabricated on the ZnO/Si structure by using a direct current sputtering system and photolithography, combined with the lift-off method, thereby obtaining a surface acoustic wave device. Finally, frequency responses were measured using a network analyzer, and an illuminating test was adopted for the ultraviolet sensor, using a wavelength of 355 nm from a light-emitting diode. The sensitivities of the ultraviolet sensor were also discussed. - Highlights: • The ZnO/Si SAW devices exhibit the Rayleigh and Sezawa modes. • The crystalline of ZnO affects the EHP recombination and generation. • The PL spectrum of ZnO shows Gaussian fitting distributions. • The CTD UV is influenced by SAW types and ZnO film characteristics.

  12. Textured ZnO thin films by RF magnetron sputtering

    CERN Document Server

    Ginting, M; Kang, K H; Kim, S K; Yoon, K H; Park, I J; Song, J S

    1999-01-01

    Textured thin films ZnO has been successfully grown by rf magnetron sputtering method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The grain size of the textured surface is highly dependent on the argon pressure during the deposition. The pressure in this experiment was varied from 50 mTorr down to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmittance of the films are more than 85% in the wavelength of 400 to 800 nm, and haze ratio of about 14% is obtained at 400 nm wavelength. Beside the textured surface, these films also have very low resistivity, which is lower than 1.4x10 sup - sup 3 OMEGA centre dot cm. X-ray analysis shows that the films with textured surface have four diffraction peaks on the direction of (110), (002), (101) and (112), while the non-textured films have only (110) and (002) peaks. Due to the excellent characteristics of this film, it will make the film very good TCO alternatives for the ...

  13. Impact of nanostructured thin ZnO film in ultraviolet protection.

    Science.gov (United States)

    Sasani Ghamsari, Morteza; Alamdari, Sanaz; Han, Wooje; Park, Hyung-Ho

    2017-01-01

    Nanoscale ZnO is one of the best choices for ultraviolet (UV) protection, not only because of its antimicrobial properties but also due to its potential application for UV preservation. However, the behavior of nanostructured thin ZnO films and long-term effects of UV-radiation exposure have not been studied yet. In this study, we investigated the UV-protection ability of sol gel-derived thin ZnO films after different exposure times. Scanning electron microscopy, atomic force microscopy, and UV-visible optical spectroscopy were carried out to study the structure and optical properties of the ZnO films as a function of the UV-irradiation time. The results obtained showed that the prepared thin ZnO films were somewhat transparent under the visible wavelength region and protective against UV radiation. The UV-protection factor was 50+ for the prepared samples, indicating that they were excellent UV protectors. The deposited thin ZnO films demonstrated promising antibacterial potential and significant light absorbance in the UV range. The experimental results suggest that the synthesized samples have potential for applications in the health care field.

  14. Synthesis and characterization of ZnO thin film by low cost modified SILAR technique

    Directory of Open Access Journals (Sweden)

    Haridas D. Dhaygude

    2016-03-01

    Full Text Available The ZnO thin film is prepared on Fluorine Tin Oxide (FTO coated glass substrate by using SILAR deposition technique containing ZnSO4.7H2O and NaOH as precursor solution with 150 deeping cycles at 70 °C temperature. Nanocrystalline diamond like ZnO thin film is characterized by different characterization techniques such as X-ray diffraction (XRD, Fourier transform (FT Raman spectrometer, Field Emission Scanning Electron Microscopy (FE-SEM with Energy dispersive X-Ray Analysis (EDAX, optical absorption, surface wettability and photoelectrochemical cell performance measurement. The X-ray diffraction analysis shows that the ZnO thin film is polycrystalline in nature having hexagonal crystal structure. The FT-Raman scattering exhibits a sharp and strong mode at 383 cm−1 which confirms hexagonal ZnO nanostructure. The surface morphology study reveals that deposited ZnO film consists of nanocrystalline diamond like morphology all over the substrate. The synthesized thin film exhibited absorption wavelength around 309 nm. Optical study predicted the direct band gap and band gap energy of this film is found to be 3.66 eV. The photoelectrochemical cell (PEC parameter measurement study shows that ZnO sample confirmed the highest values of, short circuit current (Isc - 629 mAcm−2, open circuit voltage (Voc - 878 mV, fill factor (FF - 0.48, and maximum efficiency (η - 0.89%, respectively.

  15. Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts

    Science.gov (United States)

    Cavallari, Nicholas; Pattini, Francesco; Rampino, Stefano; Annoni, Filippo; Barozzi, Mario; Bronzoni, Matteo; Gilioli, Edmondo; Gombia, Enos; Maragliano, Carlo; Mazzer, Massimo; Pepponi, Giancarlo; Spaggiari, Giulia; Fornari, Roberto

    2017-08-01

    We report on the fabrication and characterization of Cu(In,Ga)Se2 (CIGS)-based thin film bifacial solar cells using Al-doped ZnO (AZO) as cost-effective and non-toxic transparent back contact. We show that, by depositing both CIGS and AZO by Low Temperature Pulsed Electron Deposition at a maximum temperature of 250 °C, a good ohmic contact is formed between the two layers and good quality solar cells can be fabricated as a result. Photovoltaic efficiencies as high as 9.3% (front illumination), 5.1% (backside illumination) and 11.6% (bifacial illumination) have been obtained so far. These values are remarkably higher than those previously reported in the literature. We demonstrate that this improvement is ascribed to the low-temperature deposition process that avoids the formation of Ga2O3 at the CIGS/AZO interface and favours the formation of a low-resistivity contact in agreement with device simulations.

  16. Investigation of thin ZnO layers in view of laser desorption-ionization

    Energy Technology Data Exchange (ETDEWEB)

    Grechnikov, A A; Borodkov, A S [Vernadsky Institute of Geochemistry and Analytical Chemistry, Russian Academy of Sciences, 19 Kosygin Str., 119991 Moscow (Russian Federation); Georgieva, V B [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Alimpiev, S S; Nikiforov, S M; Simanovsky, Ya O [General Physics Institute, Russian Academy of Sciences, 38 Vavilov Str., 119991 Moscow (Russian Federation); Dimova-Malinovska, D; Angelov, O I, E-mail: lazarova@issp.bas.b [Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria)

    2010-04-01

    Thin zinc oxide films (ZnO) were developed as a matrix-free platform for surface assisted laser desorption-ionization (SALDI) time-of-flight mass spectrometry. The ZnO films were deposited by RF magnetron sputtering of ZnO ceramic targets in Ar atmospheres on monocrystalline silicon. The generation under UV (355 nm) laser irradiation of positive ions of atenolol, reserpine and gramicidin S from the ZnO layers deposited was studied. All analytes tested were detected as protonated molecules with no or very structure-specific fragmentation. The mass spectra obtained showed low levels of chemical background noise. All ZnO films studied exhibited high stability and good reproducibility. The detection limits for test analytes are in the 10 femtomol range.

  17. Optical and photoelectrical properties of nanostructured thin ZnO films for UV-sensors

    Science.gov (United States)

    Grigoryev, L. V.; Kulakov, S. V.; Nefedov, V. G.; Shakin, O. V.; Grigoryeva, M. L.; Moskalenko, S. D.

    2017-05-01

    The article presents the results investigations of the optical and photoelectric properties thin films zinc oxide obtained by the reactive ion-plasma method. It is shown that the optical and photoelectric properties of thin ZnO films has equivalent characteristics to the properties of single crystal zinc oxide and can be used to create UV-photoresistors.

  18. Improvement of physical properties of ZnO thin films by tellurium doping

    Energy Technology Data Exchange (ETDEWEB)

    Sönmezoğlu, Savaş, E-mail: svssonmezoglu@kmu.edu.tr; Akman, Erdi

    2014-11-01

    Highlights: • We report the synthesis of tellurium-doped zinc oxide (Te–ZnO) thin films using sol–gel method. • Highly c-axis oriented Te-doped ZnO thin films were grown on FTO glasses as substrate. • 1.5% Te-doping ratio could improve the physical properties of ZnO thin films. - Abstract: This investigation addressed the structural, optical and morphological properties of tellurium incorporated zinc oxide (Te–ZnO) thin films. The obtained results indicated that Te-doped ZnO thin films exhibit an enhancement of band gap energy and crystallinity compared with non-doped films. The optical transmission spectra revealed a shift in the absorption edge toward lower wavelengths. X-ray diffraction measurement demonstrated that the film was crystallized in the hexagonal (wurtzite) phase and presented a preferential orientation along the c-axis. The XRD obtained patterns indicate that the crystallite size of the thin films, ranging from 23.9 to 49.1 nm, changed with the Te doping level. The scanning electron microscopy and atomic force microscopy results demonstrated that the grain size and surface roughness of the thin films increased as the Te concentration increased. Most significantly, we demonstrate that it is possible to control the structural, optical and morphological properties of ZnO thin films with the isoelectronic Te-incorporation level.

  19. ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

    Energy Technology Data Exchange (ETDEWEB)

    Krämer, André; Engel, Sebastian [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Sangiorgi, Nicola [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Department of Chemical Science and Technologies, University of Rome Tor Vergata, via della Ricerca Scientifica, 00133 Rome (Italy); Sanson, Alessandra [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Bartolomé, Jose F. [Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), C/Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Gräf, Stephan, E-mail: stephan.graef@uni-jena.de [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Müller, Frank A. [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena (Germany)

    2017-03-31

    Highlights: • Carbon fibres were entirely coated with thin films consisting of aligned ZnO crystals. • A Q-switched CO2 laser was utilised as radiation source. • Suitability of ZnO thin films on carbon fibres as photo anodes for DSSC was studied. - Abstract: Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO{sub 2} laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency f{sub rep} = 800 Hz and a peak power P{sub peak} = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I–V measurements were performed.

  20. Preparation and characterization of ALD deposited ZnO thin films studied for gas sensors

    International Nuclear Information System (INIS)

    Boyadjiev, S.I.; Georgieva, V.; Yordanov, R.; Raicheva, Z.; Szilágyi, I.M.

    2016-01-01

    Highlights: • For the first time the gas sensing towards NO 2 of very thin ALD ZnO films is studied. • The very thin ALD ZnO films showed excellent sensitivity to NO 2 at room temperature. • These very thin film ZnO-based QCM sensors very well register even low concentrations. • The sensors have fully reversible sorption and are able to be recovered in short time. • Described fast and cost-effective ALD deposition of ZnO thin films for QCM gas sensor. - Abstract: Applying atomic layer deposition (ALD), very thin zinc oxide (ZnO) films were deposited on quartz resonators, and their gas sensing properties were studied using the quartz crystal microbalance (QCM) method. The gas sensing of the ZnO films to NO 2 was tested in the concentration interval between 10 and 5000 ppm. On the basis of registered frequency change of the QCM, for each concentration the sorbed mass was calculated. Further characterization of the films was carried out by various techniques, i.e. by SEM-EDS, XRD, ellipsometry, and FTIR spectroscopy. Although being very thin, the films were gas sensitive to NO 2 already at room temperature and could register very well as low concentrations as 100 ppm, while the sorption was fully reversible. Our results for very thin ALD ZnO films show that the described fast, simple and cost-effective technology could be implemented for producing gas sensors working at room temperature and being capable to detect in real time low concentrations of NO 2 .

  1. Preparation and characterization of ALD deposited ZnO thin films studied for gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Boyadjiev, S.I., E-mail: boiajiev@gmail.com [MTA-BME Technical Analytical Chemistry Research Group, Szent Gellért tér 4, Budapest, H-1111 (Hungary); Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Georgieva, V. [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Yordanov, R. [Department of Microelectronics, Technical University of Sofia, 8 Kliment Ohridski Blvd., 1756 Sofia (Bulgaria); Raicheva, Z. [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Szilágyi, I.M. [MTA-BME Technical Analytical Chemistry Research Group, Szent Gellért tér 4, Budapest, H-1111 (Hungary); Budapest University of Technology and Economics, Department of Inorganic and Analytical Chemistry, Szent Gellért tér 4, Budapest, H-1111 (Hungary)

    2016-11-30

    Highlights: • For the first time the gas sensing towards NO{sub 2} of very thin ALD ZnO films is studied. • The very thin ALD ZnO films showed excellent sensitivity to NO{sub 2} at room temperature. • These very thin film ZnO-based QCM sensors very well register even low concentrations. • The sensors have fully reversible sorption and are able to be recovered in short time. • Described fast and cost-effective ALD deposition of ZnO thin films for QCM gas sensor. - Abstract: Applying atomic layer deposition (ALD), very thin zinc oxide (ZnO) films were deposited on quartz resonators, and their gas sensing properties were studied using the quartz crystal microbalance (QCM) method. The gas sensing of the ZnO films to NO{sub 2} was tested in the concentration interval between 10 and 5000 ppm. On the basis of registered frequency change of the QCM, for each concentration the sorbed mass was calculated. Further characterization of the films was carried out by various techniques, i.e. by SEM-EDS, XRD, ellipsometry, and FTIR spectroscopy. Although being very thin, the films were gas sensitive to NO{sub 2} already at room temperature and could register very well as low concentrations as 100 ppm, while the sorption was fully reversible. Our results for very thin ALD ZnO films show that the described fast, simple and cost-effective technology could be implemented for producing gas sensors working at room temperature and being capable to detect in real time low concentrations of NO{sub 2}.

  2. Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available In this work, zinc oxide (ZnO multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV–Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications. Keywords: Multilayer films, Semiconductor, ZnO, XRD, SEM, Optoelectronic properties

  3. Reversible wettability of nanostructured ZnO thin films by sol-gel method

    Science.gov (United States)

    Lü, Jianguo; Huang, Kai; Chen, Xuemei; Zhu, Jianbo; Meng, Fanming; Song, Xueping; Sun, Zhaoqi

    2010-05-01

    Nanostructured ZnO thin films were deposited on Si(1 1 1) and quartz substrate by sol-gel method. The thin films were annealed at 673 K, 873 K, and 1073 K for 60 min. Microstructure, surface topography, and water contact angle of the thin films have been measured by X-ray diffractometer, atomic force microscopy, and water contact angle apparatus. XRD results showed that the ZnO thin films are polycrystalline with hexagonal wurtzite structure. AFM studies revealed that rms roughness changes from 2.3 nm to 7.4 nm and the grain size grow up continuously with increasing annealing temperature. Wettability results indicated that hydrophobicity of the un-irradiated ZnO thin films enhances with annealing temperature increase. The hydrophobic ZnO surfaces could be reversibly switched to hydrophilic by alternation of UV illumination and dark storage (thermal treatment). By studying the magnitude and the contact angle reduction rate of the light-induced process, the contribution of surface roughness is discussed.

  4. DFT calculations on electronic properties of ZnO thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Cordeiro, J.M.; Reynoso, V.C.; Azevedo, D.H.M. [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), SP (Brazil)

    2016-07-01

    Full text: Introduction - Thin films of Zinc oxide (ZnO) has a wide range of technological applications, as transparent conducting electrodes in solar cells, flat panel displays, and sensors, for example. More recently applications in optoelectronics, like light emitter diodes and laser diodes, due to its large band gap, are been explored. Studies of ZnO thin films are important for these applications. Methodology - In this study thin films of ZnO have been deposited by spray pyrolysis on glass substrate. The films were characterized by XRD and UV-VIS techniques and the electronic properties as a function of the film thickness have been investigated by DFT calculations with B3LYP hybrid potential implemented in the CRYSTAL09 code. Results - The diffractograms obtained for the ZnO thin films as a function of the thickness are shown. The films exhibit a hexagonal wurtzite structure with preferred c-axis orientation in (002) direction of ZnO crystal. A quantum mechanical approach based on the periodic Density Functional Theory (DFT), with B3LYP hybrid potential was used to investigate the electronic structure of the films as a function of the thickness. The CRYSTAL09 code has been used for the calculations on the wurtzite hexagonal structure of ZnO - spatial group P63mc. For optimizing the geometry of the pure ZnO crystal, the experimental lattice parameters were got as follows: a= 0.325 nm, b= 0.325 nm, c= 0.5207 nm with c/a= 1.602. Considering to the calculations of the band structure, it is suggested that the semiconducting properties of ZnO arises from the overlapping of the 4s orbital of the conducting band of Zn and the 2p orbital of the top of valence band of O. Conclusions - The structure of ZnO thin film deposited on glass substrate present preferential orientation in (002) direction. Variation in the optical properties as a function of the film thickness was observed. The band gap energy was determined from optical analysis to be ∼ 3.27 eV. The refractive

  5. Synthesis, structural and optical characterization of undoped, N-doped ZnO and co-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Trilok Kumar, E-mail: tpathak01@gmail.com; Kumar, R.; Purohit, L. P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab., Department of Physics, Gurukula Kangri University, Haridwar (India)

    2015-05-15

    ZnO, N-doped ZnO and Al-N co-doped ZnO thin films were deposited on ITO coated corning glass by spin coater using sol-gel method. The films were annealed in air at 450°C for one hour. The crystallographic structure and morphology of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The X-ray diffraction results confirm that the thin films are of wurtzite hexagonal with a very small distortion. The optical properties were investigated by transmission spectra of different films using spectrophotometer (Shimadzu UV-VIS-NIR 3600). The results indicate that the N doped ZnO thin films have obviously enhanced transmittance in visible region. Moreover, the thickness of the films has strong influences on the optical constants.

  6. ZnO thin film synthesis by reactive radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Şenay, Volkan, E-mail: vsenay@bayburt.edu.tr [Bayburt University, Primary Science Education Department, Bayburt, 69000 (Turkey); Pat, Suat; Korkmaz, Şadan; Aydoğmuş, Tuna; Elmas, Saliha; Özen, Soner; Ekem, Naci [Eskisehir Osmangazi University, Physics Department, Eskisehir, 26480 (Turkey); Balbağ, M. Zafer [Eskisehir Osmangazi University, Education Faculty, Eskisehir, 26480 (Turkey)

    2014-11-01

    Highlights: • Band gaps of the layer are affected by the film thickness. • Nano structured ZnO deposited. • Spectral dependence of reflectance of deposited ZnO thin films. - Abstract: In this study, ZnO thin films were deposited on glass substrates by reactive RF magnetron sputtering method at argon–oxygen gas mixing (1:1) atmosphere. Some properties of the synthesized films were investigated by interferometry, UV–vis spectrophotometer, atomic force microscopy, and tensiometer. Tauc method was adopted to estimate the optical band gaps. The band gaps of the deposited films were affected by film thickness. We concluded that the surface composition plays a substantial role in the values of the band gaps. Nanocrystalline structures were detected in all produced samples.

  7. ZnO thin film synthesis by reactive radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Şenay, Volkan; Pat, Suat; Korkmaz, Şadan; Aydoğmuş, Tuna; Elmas, Saliha; Özen, Soner; Ekem, Naci; Balbağ, M. Zafer

    2014-01-01

    Highlights: • Band gaps of the layer are affected by the film thickness. • Nano structured ZnO deposited. • Spectral dependence of reflectance of deposited ZnO thin films. - Abstract: In this study, ZnO thin films were deposited on glass substrates by reactive RF magnetron sputtering method at argon–oxygen gas mixing (1:1) atmosphere. Some properties of the synthesized films were investigated by interferometry, UV–vis spectrophotometer, atomic force microscopy, and tensiometer. Tauc method was adopted to estimate the optical band gaps. The band gaps of the deposited films were affected by film thickness. We concluded that the surface composition plays a substantial role in the values of the band gaps. Nanocrystalline structures were detected in all produced samples

  8. EPD-deposited ZnO thin films: a review

    Directory of Open Access Journals (Sweden)

    Verde, M.

    2014-08-01

    Full Text Available ZnO-based materials and specifically ZnO films with tailored morphology have been subjected to extensive research in the past few years due to their high potential for multiple prospective applications, mainly in electronics. Electrophoretic Deposition (EPD constitutes an economical, ecofriendly, low energy consuming and easily scalable alternative to the high energy consuming evaporative techniques which are commonly used for the obtaining of these ZnO films. For its application, however, the use of stable, well dispersed suspensions is a necessary requirement, and thus a thorough study of their colloidal chemistry is essential. In this work the main contributions to the study of colloidal chemistry of ZnO nanoparticle suspensions and their shaping into ZnO films by EPD are summarized.Los materiales basados en ZnO y en particular las láminas de ZnO con morfología controlada han sido objeto en los últimos años de numerosas investigaciones debido al elevado potencial que presentan para múltiples aplicaciones emergentes, principalmente en electrónica. La deposición electroforética (EPD constituye un método alternativo económico, ecológico, de bajo coste energético y elevada escalabilidad para la producción de éstas láminas de ZnO, en contraste con las técnicas evaporativas empleadas habitualmente, las cuales presentan un elevado impacto energético, así como una escalabilidad complicada. Para su aplicación, sin embargo, y puesto que el principal requisito es el uso de suspensiones estables y bien dispersas, es necesario un detallado estudio de la coloidequímica de las mismas. En este trabajo se resumen las aportaciones más relevantes relativas al estudio de los distintos parámetros que afectan a la estabilidad coloidal de las suspensiones de nanopartículas de ZnO y al proceso de obtención de las láminas mediante EPD a partir de las mismas.

  9. Superhydrophobic nanostructured ZnO thin films on aluminum alloy substrates by electrophoretic deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Ying; Sarkar, D.K., E-mail: dsarkar@uqac.ca; Chen, X-Grant

    2015-02-01

    Graphical abstract: - Highlights: • Fabrication of superhydrophobic ZnO thin films surfaces by electrophoretic deposition process on aluminum substrates. • Effect of bath temperature on the physical and superhydrophobic properties of thin films. • The water contact angle of 155° ± 3 with roll off property has been observed on the film that was grown at bath temperatures of 50 °C. • The activation energy for electrophoretic deposition of SA-functionalized ZnO nanoparticle is calculated to be 0.50 eV. - Abstract: Superhydrophobic thin films have been fabricated on aluminum alloy substrates by electrophoretic deposition (EPD) process using stearic acid (SA) functionalized zinc oxide (ZnO) nanoparticles suspension in alcohols at varying bath temperatures. The deposited thin films have been characterized using both X-ray diffraction (XRD) and infrared (IR) spectroscopy and it is found that the films contain low surface energy zinc stearate and ZnO nanoparticles. It is also observed that the atomic percentage of Zn and O, roughness and water contact angle of the thin films increase with the increase of the deposited bath temperature. Furthermore, the thin film deposited at 50 °C, having a roughness of 4.54 ± 0.23 μm, shows superhydrophobic properties providing a water contact angle of 155 ± 3° with rolling off properties. Also, the activation energy of electrophoretic deposition of stearic-acid-functionalized ZnO nanoparticles is calculated to be 0.5 eV.

  10. Development of novel control system to grow ZnO thin films by reactive evaporation

    Directory of Open Access Journals (Sweden)

    Gerardo Gordillo

    2016-07-01

    Full Text Available This work describes a novel system implemented to grow ZnO thin films by plasma assisted reactive evaporation with adequate properties to be used in the fabrication of photovoltaic devices with different architectures. The innovative aspect includes both an improved design of the reactor used to activate the chemical reaction that leads to the formation of the ZnO compound as an electronic system developed using the virtual instrumentation concept. ZnO thin films with excellent opto-electrical properties were prepared in a reproducible way, controlling the deposition system through a virtual instrument (VI with facilities to control the amount of evaporated zinc involved in the process that gives rise to the formation of ZnO, by means of the incorporation of PID (proportional integral differential and PWM (pulse width modulation control algorithms. The effectiveness and reliability of the developed system was verified by obtaining with good reproducibility thin films of n+-ZnO and i-ZnO grown sequentially in situ with thicknesses and resistivities suitable for use as window layers in chalcopyrite based thin film solar cells.

  11. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    Czech Academy of Sciences Publication Activity Database

    Melikhova, O.; Čížek, J.; Lukáč, F.; Vlček, M.; Novotný, Michal; Bulíř, Jiří; Lančok, Ján; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

    2013-01-01

    Roč. 580, suppl. 1 (2013), S40-S43 ISSN 0925-8388 R&D Projects: GA ČR(CZ) GAP108/11/0958 Institutional support: RVO:68378271 Keywords : defects * hydrogen * positron annihilation * thin films * ZnO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.726, year: 2013

  12. Carrier dynamics and gain spectra at room-temperature in epitaxial ZNO thin films

    DEFF Research Database (Denmark)

    Yu, Ping; Hvam, Jørn Märcher; Wong, K. S.

    1999-01-01

    Carrier dynamics of epitaxial ZnO thin film was investigated using a frequency up-conversion tehcnique. At lower carrier densities, the decay time of free exciton recombination was measured to be 24 ps. Rapid decay times of a few picoseconds were observed at higher carrier densities, which show a...

  13. Preparation and characterization of nanostructured ZnO thin films for ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Nanostructured zinc oxide thin films (ZnO) were prepared on conducting glass support (SnO2: F overlayer) via sol–gel starting from colloidal solution of zinc acetate 2-hydrate in ethanol and 2-methoxy ethanol. Films were obtained by spin coating at 1500 rpm under room conditions (temperature, 28–35°C) and.

  14. Preparation and characterization of nanostructured ZnO thin films for ...

    Indian Academy of Sciences (India)

    Administrator

    Owing to such defects ZnO shows a broad low intensity spectrum centred at green ... posed into volatile compounds under heat treatment (Ar- melao et al 2003). .... 2⋅37 ± 0⋅04. 9⋅3 ± 0⋅8. *Values represent a mean of 10–15 observations; SD: Standard deviation. Thin films of zinc oxide were subjected to phase analy-.

  15. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    Reliable and repeated switching of the resistance of ZnO thin films was obtained between two well defined states of high and low resistance with a narrow dispersion and small switching voltages. Resistance ratios of the high resistance state to low resistance state were found to be in the range of 2–5 orders of magnitude ...

  16. Influence of pH on ZnO nanocrystalline thin films prepared by sol ...

    Indian Academy of Sciences (India)

    bDepartment of Physics, Hindusthan College of Engineering and Technology, Coimbatore 641 032, India. cDepartment of ... dDepartment of Physics, Erode Sengunthar Engineering College, Erode 638 057, India ... ZnO thin films have been coated at room temperature and at four different pH values of 4, 6, 8 and 10. The.

  17. Structural, optical and electrical properties of ZnO thin films prepared ...

    Indian Academy of Sciences (India)

    Administrator

    Indian Academy of Sciences. 433. Structural, optical and electrical properties of ZnO thin films prepared by spray pyrolysis: Effect of precursor concentration. F ZAHEDI1, R S DARIANI1,* and S M ROZATI2. 1Department of Physics, Alzahra University, Tehran 1993893973, Iran. 2Department of Physics, University of Guilan, ...

  18. Piezoelectricity and charge trapping in ZnO and Co-doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Domenico D’Agostino

    2017-05-01

    Full Text Available Piezoelectricity and charge storage of undoped and Co-doped ZnO thin films were investigated by means of PiezoResponse Force Microscopy and Kelvin Probe Force Microscopy. We found that Co-doped ZnO exhibits a large piezoelectric response, with the mean value of piezoelectric matrix element d33 slightly lower than in the undoped sample. Moreover, we demonstrate that Co-doping affects the homogeneity of the piezoelectric response, probably as a consequence of the lower crystalline degree exhibited by the doped samples. We also investigate the nature of the interface between a metal electrode, made up of the PtIr AFM tip, and the films as well as the phenomenon of charge storage. We find Schottky contacts in both cases, with a barrier value higher in PtIr/ZnO than in PtIr/Co-doped ZnO, indicating an increase in the work function due to Co-doping.

  19. Percentage of different aluminum doping influence the morphological and optical properties of ZnO nanostructured growth for sensor application

    Energy Technology Data Exchange (ETDEWEB)

    Mohamed, R., E-mail: ruziana12@gmail.com [NANO-ElecTronic Centre, Faculty of Electrical engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre, Institue of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Applied Sciences, Universiti Teknologi MARA Pahang, 26400 Bandar Tun Razak Jengka, Pahang (Malaysia); Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com [NANO-ElecTronic Centre, Faculty of Electrical engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Khusaimi, Z., E-mail: Zurai142@salam.uitm.edu.my [NANO-SciTech Centre, Institue of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Applied Sciences, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Mamat, M. H., E-mail: hafiz-030@yahoo.com [NANO-ElecTronic Centre, Faculty of Electrical engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre, Institue of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Alrokayan, Salman A. H., E-mail: dr.salman@alrokayan.com; Khan, Haseeb A., E-mail: khan-haseeb@yahoo.com [Department of Biochemistry, College of Science, King Saud University (KSU), Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: nanouitm@gmail.com [NANO-SciTech Centre, Institue of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Applied Sciences, Universiti Teknologi MARA Pahang, 26400 Bandar Tun Razak Jengka, Pahang (Malaysia)

    2016-07-06

    In this work, Zinc Oxide (ZnO) with different aluminum (Al) doping percentage was synthesis by sol gel immersion method. Al doped ZnO at various doping percentage from 1, 2, 3, 4 and 5. It was found that with different Al percentage influence the morphological and optical properties of ZnO growth. Field Emission Scanning Electron Microscope (FESEM) image showed the use of different Al doping causes the difference in geometry and size of ZnO nanorods growth. Based on UV-Vis spectroscopy, the transmittance at 1% Al doping has the highest spectrum.

  20. Percentage of different aluminum doping influence the morphological and optical properties of ZnO nanostructured growth for sensor application

    International Nuclear Information System (INIS)

    Mohamed, R.; Ismail, A. S.; Khusaimi, Z.; Mamat, M. H.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-01-01

    In this work, Zinc Oxide (ZnO) with different aluminum (Al) doping percentage was synthesis by sol gel immersion method. Al doped ZnO at various doping percentage from 1, 2, 3, 4 and 5. It was found that with different Al percentage influence the morphological and optical properties of ZnO growth. Field Emission Scanning Electron Microscope (FESEM) image showed the use of different Al doping causes the difference in geometry and size of ZnO nanorods growth. Based on UV-Vis spectroscopy, the transmittance at 1% Al doping has the highest spectrum.

  1. Luminescence and structural properties of ZnO thin films annealing in air

    Energy Technology Data Exchange (ETDEWEB)

    Baca, R; Martinez, J [Centro de Investigacion de Dispositivos Semiconductores, BUAP, Puebla, Pue. C.P. 72570 (Mexico); Esparza, A [Centro de Ciencias Aplicadas y Desarrollo de TecnologIa - UNAM. C.P. 04510, Mexico D.F (Mexico); Kryshtab, T [Departamento de Ciencias de Materiales, ESFM - IPN, Mexico D.F (Mexico); Juarez, G; Solache, H; Andraca, J; Pena, R, E-mail: rbaca02006@yahoo.com.mx

    2010-02-15

    All ZnO thin films deposited on (001) silicon substrates by DC reactive magnetron sputtering were annealed in air atmosphere with different times at 800deg. C. The samples were studied by X-ray diffraction technique (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. XRD investigation showed that ZnO phase was hexagonal wurtzite structure growing along the (002) direction. The as grown ZnO films presented macrostrain and microstrain caused a shift of the line diffraction (002) and a broadening respectively. However after 1 hour annealing these strains disappear. The grain size of ZnO films increased with an increase of annealing time. The as-deposited reactive sputtering ZnO films resulted semi-insulating with poor PL response. After high temperature annealing in air, the crystallinity and the PL response considerably improved, but their semi-insulating property also increased. The PL spectra of the annealed samples showed well defined transitions close to the near-band-edge and a wide visible deep-level band emission (430-640 nm). The main interest of this work was to enhance the PL response and to identify the origin of deep-level luminescence bands. The AFM, PL and XRD results indicated that the ZnO films annealing have potential applications in optoelectronic devices.

  2. Luminescence and structural properties of ZnO thin films annealing in air

    Science.gov (United States)

    Baca, R.; Juárez, G.; Solache, H.; Andraca, J.; Martinez, J.; Esparza, A.; Kryshtab, T.; Peña, R.

    2010-02-01

    All ZnO thin films deposited on (001) silicon substrates by DC reactive magnetron sputtering were annealed in air atmosphere with different times at 800°C. The samples were studied by X-ray diffraction technique (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. XRD investigation showed that ZnO phase was hexagonal wurtzite structure growing along the (002) direction. The as grown ZnO films presented macrostrain and microstrain caused a shift of the line diffraction (002) and a broadening respectively. However after 1 hour annealing these strains disappear. The grain size of ZnO films increased with an increase of annealing time. The as-deposited reactive sputtering ZnO films resulted semi-insulating with poor PL response. After high temperature annealing in air, the crystallinity and the PL response considerably improved, but their semi-insulating property also increased. The PL spectra of the annealed samples showed well defined transitions close to the near-band-edge and a wide visible deep-level band emission (430-640 nm). The main interest of this work was to enhance the PL response and to identify the origin of deep-level luminescence bands. The AFM, PL and XRD results indicated that the ZnO films annealing have potential applications in optoelectronic devices.

  3. Formation of p-type ZnO thin film through co-implantation.

    Science.gov (United States)

    Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

    2017-01-20

    We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N + implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (10 19 cm -3 ) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of P Zn -4N O complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

  4. Influence of Surface Modification on Physicochemical Properties of ZnO Thin Films and Nanostructures: a Review

    Science.gov (United States)

    Xian, Fenglin; Xu, Linhua

    The surface modification plays an important role on both physical and chemical properties of zinc oxide (ZnO) materials. In this review paper, efforts are made to summarize and analyze reported results regarding surface modification method, surface modification effect on the luminescence and superhydrophobic properties of ZnO thin films and nanostructures. Furthermore, the photocatalytic activity and gas sensor property of modified ZnO using both organic and inorganic species are also involved.

  5. Pulsed laser deposition of piezoelectric ZnO thin films for bulk acoustic wave devices

    Energy Technology Data Exchange (ETDEWEB)

    Serhane, Rafik, E-mail: rserhane@cdta.dz [Centre for Development of Advanced Technologies, Cité 20 Août 1956, Baba Hassen, BP: 17, DZ-16303 Algiers (Algeria); Abdelli-Messaci, Samira; Lafane, Slimane; Khales, Hammouche; Aouimeur, Walid [Centre for Development of Advanced Technologies, Cité 20 Août 1956, Baba Hassen, BP: 17, DZ-16303 Algiers (Algeria); Hassein-Bey, Abdelkadder [Centre for Development of Advanced Technologies, Cité 20 Août 1956, Baba Hassen, BP: 17, DZ-16303 Algiers (Algeria); Micro and Nano Physics Group, Faculty of Sciences, University Saad Dahlab of Blida (USDB), BP. 270, DZ-09000 Blida (Algeria); Boutkedjirt, Tarek [Equipe de Recherche Physique des Ultrasons, Faculté de Physique, Université des Sciences et de la Technologie Houari Boumediene (USTHB), BP 32, El-Alia, Bab-Ezzouar, DZ-16111 Algiers (Algeria)

    2014-01-01

    Piezoelectric properties of ZnO thin films have been investigated for micro-electro-mechanical systems (MEMS). Wurtzite ZnO structure was prepared on different substrates (Si (1 0 0), Pt (1 1 1)/Ti/SiO{sub 2}/Si and Al (1 1 1)/SiO{sub 2}/Si) at different substrate temperatures (from 100 to 500 °C) by a pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) characterization showed that the ZnO films were highly c-axis (0 0 2) oriented, which is of interest for various piezoelectric applications. Scanning electron microscopy (SEM) showed evidence of honeycomb-like structure on the surface and columnar structure on the cross-section. In the case of ZnO on Al, ZnO exhibited an amorphous phase at the ZnO/Al interface. The XRD measurements indicated that the substrate temperature of 300 °C was the optimum condition to obtain high quality (strongest (0 0 2) peak with the biggest associated grain size) of crystalline ZnO on Pt and on Al and that 400 °C was the optimum one on Si. ZnO on Al exhibits smallest rocking curve width than on Pt, leading to better crystalline quality. The ZnO films were used in bulk acoustic wave (BAW) transducer. Electrical measurements of the input impedance and S-Parameters showed evidence of piezoelectric response. The electromechanical coupling coefficient was evaluated as K{sub eff}{sup 2}=5.09%, with a quality factor Q{sub r} = 1001.4.

  6. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Ahumada-Lazo, R.; Torres-Martínez, L.M. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Ruíz-Gómez, M.A. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Departmento de Física Aplicada, CINVESTAV-IPN, Antigua Carretera a Progreso km 6, Mérida, Yucatán 97310, México (Mexico); Vega-Becerra, O.E. [Centro de Investigación en Materiales Avanzados S.C, Alianza norte 202, Parque de Investigación e Innovación Tecnológica, C.P. 66600 Apodaca Nuevo León, México (Mexico); and others

    2014-12-15

    Graphical abstract: - Highlights: • Decolorization of Orange G dye using highly c-axis-oriented ZnO thin films. • The flake-shaped film shows superior and stable photoactivity at a wide range of pH. • The highest photodecolorization was achieved at pH of 7. • The exposure of (101) and (100) facets enhanced the photoactivity. • ZnO thin films exhibit a promising performance as recyclable photocatalysts. - Abstract: The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV–visible spectroscopy (UV–Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media.

  7. Microstructure of ZnO Thin Films Deposited by High Power Impulse Magnetron Sputtering (Postprint)

    Science.gov (United States)

    2015-03-01

    Avrutin, S. Cho , H. Morkoc, A comprehensive review of ZnO materials and devices, J. Appl. Phys. 98 (2005) 41301. [4] M. Shimizu, T. Shiosaki, A...cathodic vacuum arc, Thin Solid Films 398–399 (2001) 244. [11] C.F. Yu, C.W. Sung , S.H. Chen, S.J. Sun, Relationship between the photoluminescence...L. Sanghun, C. Dongkeun, K. Won-Jeong, H. Moon- Ho , L. Woong, Ga-doped ZnO films deposited with varying sputtering powers and substrate temperatures by

  8. Nanostructured hybrid ZnO thin films for energy conversion

    Directory of Open Access Journals (Sweden)

    Samantilleke Anura

    2011-01-01

    Full Text Available Abstract We report on hybrid films based on ZnO/organic dye prepared by electrodeposition using tetrasulfonated copper phthalocyanines (TS-CuPc and Eosin-Y (EoY. Both the morphology and porosity of hybrid ZnO films are highly dependent on the type of dyes used in the synthesis. High photosensitivity was observed for ZnO/EoY films, while a very weak photoresponse was obtained for ZnO/TS-CuPc films. Despite a higher absorption coefficient of TS-CuPc than EoY, in ZnO/EoY hybrid films, the excited photoelectrons between the EoY levels can be extracted through ZnO, and the porosity of ZnO/EoY can also be controlled.

  9. Growth and optical characteristics of high-quality ZnO thin films on graphene layers

    Directory of Open Access Journals (Sweden)

    Suk In Park

    2015-01-01

    Full Text Available We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm2 at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

  10. Comparative investigation on cation-cation (Al-Sn) and cation-anion (Al-F) co-doping in RF sputtered ZnO thin films: Mechanistic insight

    Energy Technology Data Exchange (ETDEWEB)

    Mallick, Arindam; Basak, Durga, E-mail: sspdb@iacs.res.in

    2017-07-15

    Highlights: • Comparative study on Al, Al-Sn and Al-F doped ZnO films has been carried out. • High transparent Al-F co-doped film shows three times enhanced carrier density. • Al-F co-doped film shows larger carrier relaxation time. • Al-Sn co-doped films shows carrier transport dominated by impurity scattering. • Al-F co-doped ZnO film can be applied as transparent electrode. - Abstract: Herein, we report a comparative mechanistic study on cation-cation (Al-Sn) and cation-anion (Al-F) co-doped nanocrystalline ZnO thin films grown on glass substrate by RF sputtering technique. Through detailed analyses of crystal structure, surface morphology, microstructure, UV-VIS-NIR transmission-reflection and electrical transport property, the inherent characteristics of the co-doped films were revealed and compared. All the nanocrystalline films retain the hexagonal wurtzite structure of ZnO and show transparency above 90% in the visible and NIR region. As opposed to expectation, Al-Sn (ATZO) co-doped film show no enhanced carrier concentration consistent with the probable formation of SnO{sub 2} clusters supported by the X-ray photoelectron spectroscopy study. Most interestingly, it has been found that Al-F (AFZO) co-doped film shows three times enhanced carrier concentration as compared to Al doped and Al-Sn co-doped films attaining a value of ∼9 × 10{sup 20} cm{sup −3} due to the respective cation and anion substitution. The carrier relaxation time increases in AFZO while it decreases significantly for ATZO film consistent with the concurrence of the impurity scattering in the latter.

  11. Study of the wettability of ZnO nanofilms

    Science.gov (United States)

    Subedi, Deepak Prasad; Madhup, Dinesh Kumar; Sharma, Ashish; Joshi, Ujjwal Man; Huczko, Andrzej

    2012-04-01

    Al-doped and un-doped ZnO thin films deposited on quartz substrates by the nebulized spray pyrolysis method were studied to investigate the wettability of the surface. The main objective of the present study was to investigate the wettability of ZnO thin film by changing the concentration of Al doping. Microstructure and water contact angles of the films were measured by scanning electron microscopy (SEM) and using a contact angle goniometer. SEM studies revealed that the grain size within the film increases with the doping concentration. The contact angles were studied to see the effect of aluminum doping on the hydrophilicity of the film. ZnO films were found to be hydrophobic in nature. A good correlation was observed between the SEM micrographs and contact angle results. The nature of the film was found to change from being hydrophobic to hydrophilic after the treatment in low-pressure DC glow discharge plasma, which, however, was reversible with the storage time.

  12. Retracted: Study of the wettability of ZnO nanofilms

    Directory of Open Access Journals (Sweden)

    Ujjwal M Joshi

    2012-04-01

    Full Text Available Al-doped and un-doped ZnO thin films deposited on quartz substrates by the nebulized spray pyrolysis method were studied to investigate the wettability of the surface. The main objective of the present study was to investigate the wettability of ZnO thin film by changing the concentration of Al doping. Microstructure and water contact angles of the films were measured by scanning electron microscopy (SEM and using a contact angle goniometer. SEM studies revealed that the grain size within the film increases with the doping concentration. The contact angles were studied to see the effect of aluminum doping on the hydrophilicity of the film. ZnO films were found to be hydrophobic in nature. A good correlation was observed between the SEM micrographs and contact angle results. The nature of the film was found to change from being hydrophobic to hydrophilic after the treatment in low-pressure DC glow discharge plasma, which, however, was reversible with the storage time.

  13. Comparative investigation on cation-cation (Al-Sn) and cation-anion (Al-F) co-doping in RF sputtered ZnO thin films: Mechanistic insight

    Science.gov (United States)

    Mallick, Arindam; Basak, Durga

    2017-07-01

    Herein, we report a comparative mechanistic study on cation-cation (Al-Sn) and cation-anion (Al-F) co-doped nanocrystalline ZnO thin films grown on glass substrate by RF sputtering technique. Through detailed analyses of crystal structure, surface morphology, microstructure, UV-VIS-NIR transmission-reflection and electrical transport property, the inherent characteristics of the co-doped films were revealed and compared. All the nanocrystalline films retain the hexagonal wurtzite structure of ZnO and show transparency above 90% in the visible and NIR region. As opposed to expectation, Al-Sn (ATZO) co-doped film show no enhanced carrier concentration consistent with the probable formation of SnO2 clusters supported by the X-ray photoelectron spectroscopy study. Most interestingly, it has been found that Al-F (AFZO) co-doped film shows three times enhanced carrier concentration as compared to Al doped and Al-Sn co-doped films attaining a value of ∼9 × 1020 cm-3 due to the respective cation and anion substitution. The carrier relaxation time increases in AFZO while it decreases significantly for ATZO film consistent with the concurrence of the impurity scattering in the latter.

  14. Electrical characteristics of ZnO nanorods reinforced polymer nanocomposite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharjee, Snigdha; Roy, Asim, E-mail: 28.asim@gmail.com [Department of Physics National Institute Technology Silchar Silchar-788010, Assam (India)

    2015-05-15

    ZnO nanorods have been prepared by simple chemical method, which is used to fabricate organic bistable devices (OBDs). OBDs are fabricated by incorporating different weight percent (wt %) of chemically synthesized Zinc Oxide (ZnO) nanorods into polymethylmethacrylate (PMMA). Current-voltage (I-V) measurements of the spin coated ZnO+PMMA nanocomopsite thin film on indium tin oxide (ITO) coated glass substrate showed current hysteresis behaviour, which is an indication of memory effect. The samples exhibit two distinct resistance states, ON and OFF states, characterised by relatively low and high resistance of the OBDs, respectively. It is also observed that with change in ZnO dopant concentration the value of ON/OFF current changes. Higher ON/OFF current ratio is desired for practical applications. Current conduction mechanism of the devices has been explained invoking various existing models, and it has been found that the trapped-charge-limited conduction mechanism was dominant in our samples.

  15. Electrospray Deposition of ZnO Thin Films and Its Application to Gas Sensors

    Directory of Open Access Journals (Sweden)

    Wenwang Li

    2018-02-01

    Full Text Available Electrospray is a simple and cost-effective method to fabricate micro-structured thin films. This work investigates the electrospray process of ZnO patterns. The effects of experimental parameters on jet characteristics and electrosprayed patterns are studied. The length of stable jets increases with increasing applied voltage and flow rate, and decreases with increasing nozzle-to-substrate distance, while electrospray angles exhibit an opposite trend with respect to the stable jet lengths. The diameter of electrosprayed particles decreases with increasing applied voltage, and increases with flow rate. Furthermore, an alcohol gas sensor is presented. The ZnAc is calcined into ZnO, which reveals good repeatability and stability of response in target gas. The sensing response, defined as the resistance ratio of R0/Rg, where R0 and Rg are resistance of ZnO in air and alcohol gas, increases with the concentration of alcohol vapors and electrospray deposition time.

  16. Defect studies of thin ZnO films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P

    2014-01-01

    Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

  17. Scintillation characteristic of In, Ga-doped ZnO thin films with different dopant concentrations

    International Nuclear Information System (INIS)

    Fujimoto, Yutaka; Yanagida, Takayuki; Yokota, Yuui; Chani, Valery; Yoshikawa, Akira; Sekiwa, Hideyuki

    2011-01-01

    The present study describes the first detailed evaluation of the rise and the decay time of scintillation phenomenon in In 3+ - and Ga 3+ -doped ZnO thin films with different dopant concentrations. In 3+ -(25, 55, and 141 ppm) and Ga 3+ -(33, 67, 333, and 1374 ppm) doped ZnO films were grown by the Liquid Phase Epitaxy (LPE) method. The characterization was performed using the pulse X-ray equipped streak camera system. Both the rise and the decay times were shortened considerably with increasing content of In 3+ and Ga 3+ in the films. However, the scintillation light yield under 241 Am α-ray excitation reduced when concentration of In 3+ and Ga 3+ in the ZnO films was high. (author)

  18. Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts

    Energy Technology Data Exchange (ETDEWEB)

    Cavallari, Nicholas, E-mail: nicholas.cavallari@imem.cnr.it [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy); Pattini, Francesco; Rampino, Stefano; Annoni, Filippo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Barozzi, Mario [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Bronzoni, Matteo; Gilioli, Edmondo; Gombia, Enos [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Maragliano, Carlo [Solar Bankers LLC, Phoenix, AZ (United States); Mazzer, Massimo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Pepponi, Giancarlo [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Spaggiari, Giulia; Fornari, Roberto [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy)

    2017-08-01

    Highlights: • AZO and CIGS were deposited by Low-Temperature Pulsed Electron Deposition (LT-PED). • CIGS/AZO contacts with ohmic behavior and resistance of 1.07 Ω cm{sup 2} were fabricated. • LT-PED deposition of AZO and CIGS prevents formation of Ga{sub 2}O{sub 3} interlayer. • CIGS-based bifacial solar cells with AZO back contact were realized. • Front PV efficiency of 9.3% and equivalent bifacial efficiency of 11.6% were achieved. - Abstract: We report on the fabrication and characterization of Cu(In,Ga)Se{sub 2} (CIGS)-based thin film bifacial solar cells using Al-doped ZnO (AZO) as cost-effective and non-toxic transparent back contact. We show that, by depositing both CIGS and AZO by Low Temperature Pulsed Electron Deposition at a maximum temperature of 250 °C, a good ohmic contact is formed between the two layers and good quality solar cells can be fabricated as a result. Photovoltaic efficiencies as high as 9.3% (front illumination), 5.1% (backside illumination) and 11.6% (bifacial illumination) have been obtained so far. These values are remarkably higher than those previously reported in the literature. We demonstrate that this improvement is ascribed to the low-temperature deposition process that avoids the formation of Ga{sub 2}O{sub 3} at the CIGS/AZO interface and favours the formation of a low-resistivity contact in agreement with device simulations.

  19. Characteristics of nanostructured ZnO layers deposited in spray plasma device.

    Science.gov (United States)

    Baba, K; Nikravech, M; Vrel, D; Kanaev, A; Museur, L; Chehimi, M

    2012-06-01

    ZnO and Al doped ZnO thin film have been deposited on glass substrate by "spray plasma" process using an aqueous solution of Zn(NO3)2. XRD patterns revealed polycrystalline character with the typical hexagonal würtzite structure. The preferential c-axis orientation of crystallites depends highly on the operating conditions. Willamson-Hall method and AFM photographs showed a size of crystallites ranging between 20 and 80 nm and a roughness between 6 and 50 nm. Films exhibit a transmittance between 65 and 90% in the visible region. XPS revealed that the stoichiometry of deposited ZnO is Zn/O = 0.93. Fluorescence spectroscopy showed the presence of two bands at 360 nm (UV) and at 410 nm (Blue). The UV band can be attributed to exiton emission. Another important result concerns the non-existence of a "green" band at 500 nm.

  20. Effect of Sm doping on the physical properties of ZnO thin films deposited by spray pyrolysis technique

    Science.gov (United States)

    Velusamy, P.; Babu, R. Ramesh; Aparna, K. T.

    2017-05-01

    Undoped and Sm doped ZnO thin films have been prepared by chemical spray pyrolysis method on a glass substrate at 430°C. The physical properties of undoped and Sm doped ZnO thin films are characterized by XRD, FE-SEM, UV-VIS spectroscopy, Hall measurement and PL analysis. XRD pattern reveals that all the films are polycrystalline nature. The FE-SEM study of CdO shows the smooth and uniform surface with the spherical shaped particle. The electrical study reveals the n-type semiconductor and the optical study shows that Sm doped ZnO thin films about 92% transparency and optical band gap vary between 3.266-3.276 eV. Sm doped ZnO thin films have strong green emission behavior.

  1. Investigation of sensitivity and selectivity of ZnO thin film to volatile organic compounds

    Science.gov (United States)

    Teimoori, F.; Khojier, K.; Dehnavi, N. Z.

    2017-06-01

    This research addresses a detailed study on the sensitivity and selectivity of ZnO thin film to volatile organic compound (VOC) vapors that can be used for the development of VOC sensors. The ZnO thin film of 100 nm thickness was prepared by post-annealing of e-beam evaporated Zn thin film. The sample was structurally, morphologically, and chemically characterized by X-ray diffraction and field emission scanning electron microscopy analyses. The sensitivity, selectivity, and detection limit of the sample were tested with respect to a wide range of common VOC vapors, including acetone, formaldehyde, acetic acid, formic acid, acetylene, toluene, benzene, ethanol, methanol, and isopropanol in the temperature range of 200-400 °C. The results show that the best sensitivity and detection limit of the sample are related to acetone vapor in the studied temperature range. The ZnO thin film-based acetone sensor also shows a good reproducibility and stability at the operating temperature of 280 °C.

  2. Structural and optical characterization of ZnO nanostructured thin films.

    Science.gov (United States)

    Gonzalez Gonzalez, J. C.; Urbina Yarupetan, M.

    Magnetron sputtering is surely the most common technique in the industry for large-scale growth for thin films with low emissivity, where the oxide deposited is usually ZnO. One of the recognized advantages of this technique is that the effects due to ion bombardment contribute to obtain surfaces with very little roughness, in the order of nanometers, and therefore improves the quality of the silver layer deposited at the end in windows with low emissivity. Therefore, a complete characterization of the surface layers of ZnO is required. In this sense, we have analyzed three thin layers of ZnO grown on commercial glass substrates deposited by the magnetron sputtering technique with thicknesses of 20, 50 and 100 nm. We used techniques such as: XRR, XRD, SEM and Raman spectroscopy, to assess roughness, microstructure, ZnO phonons profile and other properties like as density and refraction index. The X'Pert reflectivity program was used to fit the reflectivity data; the intensity of reflections was modeled through homogeneous and uniform layers with a well-defined limit to take into account the glass substrate. Finally, the structural results were correlated with the optical results. Ciencia Activa: Grant 221-2015-FONDECYT. PERU.

  3. Recent advances in ZnO nanostructures and thin films for biosensor applications: review.

    Science.gov (United States)

    Arya, Sunil K; Saha, Shibu; Ramirez-Vick, Jaime E; Gupta, Vinay; Bhansali, Shekhar; Singh, Surinder P

    2012-08-06

    Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO nanostructures suitable candidate for future small integrated biosensor devices. This review highlights recent advances in various approaches towards synthesis of ZnO nanostructures and thin films and their applications in biosensor technology. Copyright © 2012 Elsevier B.V. All rights reserved.

  4. Improved efficiency of the chemical bath deposition method during growth of ZnO thin films

    International Nuclear Information System (INIS)

    Ortega-Lopez, Mauricio; Avila-Garcia, Alejandro; Albor-Aguilera, M.L.; Resendiz, V.M. Sanchez

    2003-01-01

    Chemical bath deposition (CBD) is an inexpensive and low temperature method (25-90 deg. C) that allows to deposit large area semiconductor thin films. However, the extent of the desired heterogeneous reaction upon the substrate surface is limited first by the competing homogeneous reaction, which is responsible for colloidal particles formation in the bulk solution, and second, by the material deposition on the CBD reactor walls. Therefore, the CBD method exhibits low efficiency in terms of profiting the whole amount of starting materials. The present work describes a procedure to deposit ZnO thin films by CBD in an efficient way, since it offers the possibility to minimize both the undesirable homogeneous reaction in the bulk solution and the material deposition on the CBD reactor walls. In a first stage, zinc peroxide (ZnO 2 ) crystallizing with cubic structure is obtained. This compound shows a good average transparency (90%) and an optical bandgap of 4.2 eV. After an annealing process, the ZnO 2 suffers a transformation toward polycrystalline ZnO with hexagonal structure and 3.25 eV of optical bandgap. The surface morphology of the films, analyzed by atomic force microscope (AFM), reveals three-dimensional growth features as well as no colloidal particles upon the surface, therefore indicating the predominance of the heterogeneous reaction during the growth

  5. Polyelectrolyte-assisted preparation and characterization of nanostructured ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Shijun

    2005-05-15

    The present work focuses on the synthesis and characterization of nanostructured ZnO thin films onto silicon wafers modified by self-assembled-monolayers via chemical bath deposition. Two precursor solutions were designed and used for the film deposition, in which two different polymers were introduced respectively to control the growth of the ZnO colloidal particles in solution. ZnO films were deposited from an aqueous solution containing zinc salt and hexamethylenetetramine (HMTA) in the presence of a graft-copolymer (P (MAA{sub 0.50}-co(MAA-EO{sub 20}){sub 0.50}){sub 70}). A film-formation-diagram was established based on the results obtained by scanning electron microscopy (SEM) and atomic force microscopy (AFM), which describes the influence of the concentration of HMTA and copolymer on the ZnO film formation. According to the film morphology, film formation can be classified into three categories: (a) island-like films, (b) uniform films and (c) canyon-like films. The ZnO films annealed at temperatures of 450 C, 500 C, 600 C and 700 C were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). After annealing, the films are polycrystalline ZnO with wurtzite structure. XRD measurements indicate that with increasing annealing temperature, the average grain size increases accordingly and the crystallinity of the films is improved. Upon heating to 600 C, the ZnO films exhibit preferred orientation with c-axis normal to substrate, whereas the films annealed at 700 C even show a more explicit texture. By annealing at temperatures above 600 C the ZnO film reacts with the substrate to form an interfacial layer of Zn{sub 2}SiO{sub 4}, which grows thicker at elevated annealing temperatures. The ZnO films annealed at 600 C and 700 C show strong UV emission. Another non-aqueous solution system for ZnO thin film deposition was established, in which 2- propanol was used as a solvent and Zn(CH3COO){sub 2}.2H{sub 2}O as well as NaOH as reactants

  6. Effect of substrate temperature on structural and optical properties of spray deposited ZnO thin films

    Directory of Open Access Journals (Sweden)

    Larbah Y.

    2015-09-01

    Full Text Available Undoped ZnO thin films have been prepared on glass substrates at different substrate temperatures by spray pyrolysis method. The effect of temperature on the structural, morphological and optical properties of n-type ZnO films was studied. The X-ray diffraction (XRD results confirmed that the ZnO thin films were polycrystalline with wurtzite structure. Scanning electron microscopy (SEM measurements showed that the surface morphology of the films changed with temperature. The studies demonstrated that the ZnO film had a transmission of about 85 % and energy gap of 3.28 eV at 450 °C. The RBS measurements revealed that ZnO layers with a thickness up to 200 nm had a good stoichiometry.

  7. A comparative study of physico-chemical properties of CBD and SILAR grown ZnO thin films

    International Nuclear Information System (INIS)

    Jambure, S.B.; Patil, S.J.; Deshpande, A.R.; Lokhande, C.D.

    2014-01-01

    Graphical abstract: Schematic model indicating ZnO nanorods by CBD (Z 1 ) and nanograins by SILAR (Z 2 ). - Highlights: • Simple methods for the synthesis of ZnO thin films. • Comparative study of physico-chemical properties of ZnO thin films prepared by CBD and SILAR methods. • CBD outperforms SILAR method. - Abstract: In the present work, nanocrystalline zinc oxide (ZnO) thin films have been successfully deposited onto glass substrates by simple and economical chemical bath deposition (CBD) and successive ionic layer adsorption reaction (SILAR) methods. These films were further characterized for their structural, optical, surface morphological and wettability properties. The X-ray diffraction (XRD) patterns for both CBD and SILAR deposited ZnO thin films reveal the highly crystalline hexagonal wurtzite structure. From optical studies, band gaps obtained are 2.9 and 3.0 eV for CBD and SILAR deposited thin films, respectively. The scanning electron microscope (SEM) patterns show growth of well defined randomly oriented nanorods and nanograins on the CBD and SILAR deposited samples, respectively. The resistivity of CBD deposited films (10 2 Ω cm) is lower than that of SILAR deposited films (10 5 Ω cm). Surface wettability studies show hydrophobic nature for both films. From the above results it can be concluded that CBD grown ZnO thin films show better properties as compared to SILAR method

  8. Comparative study of ZnO thin films prepared by different sol-gel route

    Directory of Open Access Journals (Sweden)

    F Esmaieli Ghodsi

    2012-03-01

    Full Text Available   Retraction Notice    The paper "Comparative study of ZnO thin films prepared by different sol-gel route" by H. Absalan and F. E. Ghodsi, which appeared in Iranian Journal of Physics Research, Vol. 11, No. 4, 423-428 (in Farsi is translation of the paper "Comparative Study of ZnO Thin Films Prepared by Different Sol-Gel Route" by F. E. Ghodsi and H. Absalan, which appeared in ACTA PHYSICA POLONICA A, Vol 118 (2010 (in English and for this reason is retracted from this journal.The corresponding author  (and also the first author is the only responsible person for this action.   

  9. Effect of magnesium doping on the light-induced hydrophilicity of ZnO thin films

    Science.gov (United States)

    Kai, Huang; Jianguo, Lü; Li, Zhang; Zhen, Tang; Jiangying, Yu; Ping, Li; Feng, Liu

    2012-05-01

    Undoped and Mg-doped ZnO thin films were deposited on Si (111) and quartz substrates by using the sol-gel method. Microstructure, surface topography and water contact angle of the thin films have been measured by X-ray diffraction (XRD), an atomic force microscope (AFM) and water contact angle apparatus, respectively. The XRD results show that all the thin films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increase of Mg concentration, the RMS roughness increases from 2.14 to 9.56 nm and the contact angle of the un-irradiated thin films decreases from 89° to 82°. The wetting behavior of the resulting films can be reversibly switched from hydrophobic to hydrophilic, through alternation of UV illumination and dark storage. The light-induced efficiency of the thin films increases with the increase of Mg concentration.

  10. Impact of strain on electronic defects in (Mg,Zn)O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Florian, E-mail: fschmidt@physik.uni-leipzig.de; Müller, Stefan; Wenckstern, Holger von; Benndorf, Gabriele; Pickenhain, Rainer; Grundmann, Marius [Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig (Germany)

    2014-09-14

    We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y₂, previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively strained thin films. Furthermore a structural defect E3´ can be detected via DLTS measurements and is only incorporated in tensile strained samples. Finally it is shown that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples.

  11. Oxidation of ZnO thin films during pulsed laser deposition process

    Indian Academy of Sciences (India)

    36, No. 3, June 2013, pp. 385–388. c Indian Academy of Sciences. Oxidation of ZnO thin films during pulsed laser deposition process. E DE POSADA1,∗. , L MOREIRA1, J PÉREZ DE LA CRUZ2, M ARRONTE1, L V PONCE1,. T FLORES1 and J G LUNNEY3. 1CICATA-Instituto Politécnico Nacional, Altamira 89600, México.

  12. Preparation of cadmium-doped ZnO thin films by SILAR and their ...

    Indian Academy of Sciences (India)

    firmed from elemental analysis using EDX. The optical bandgap of the films decreases with increasing Cd dopant. The value of fundamental absorption edge is 3·18 eV for pure ZnO and it decreases to 3·11 eV for 10% Cd:ZnO. Keywords. SILAR; Cd:ZnO thin film; X-ray line broadening; SEM; optical bandgap. 1. Introduction.

  13. Applying RF Magnetron sputtering to prepare ZnO thin films and their characterization

    International Nuclear Information System (INIS)

    Saad, M.; Kassis, A.

    2009-05-01

    ZnO thin films were prepared using Rf magnetron sputtering under several preparation conditions (different values of deposition pressure, Rf power, substrate temperature). The optical properties of these films were investigated by measuring their transmission in the spectral range (300-1000 nm), and the electrical properties were investigated by measuring their electrical resistance. Results have been discussed in terms of the modified Thornton model for sputtered thin metal oxide films. Preparation conditions for depositing the highly resistive transparent i-ZnO buffer layer and the highly conducting transparent n-ZnO window layer for solar cells were proposed. (author)

  14. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2015-01-07

    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (

  15. Fabrication and Characterization of High-Crystalline Nanoporous ZnO Thin Films by Modified Thermal Evaporation System

    Science.gov (United States)

    Islam, M. S.; Hossain, M. F.; Razzak, S. M. A.; Haque, M. M.; Saha, D. K.

    2016-05-01

    The aim of this work is to fabricate high-crystalline nanoporous zinc oxide (ZnO) thin films by a modified thermal evaporation system. First, zinc thin films have been deposited on bare glass substrate by the modified thermal evaporation system with pressure of 0.05mbar, source-substrate distance of 3cm and source temperature 700∘C. Then, high-crystalline ZnO thin film is obtained by annealing at 500∘C for 2h in atmosphere. The prepared ZnO films are characterized with various deposition times of 10min and 20min. The structural property was investigated by X-ray diffractometer (XRD). The optical bandgap and absorbance/transmittance of these films are examined by ultraviolet/visible spectrophotometer. The surface morphological property has been observed by scanning electron microscope (SEM). ZnO films have showed uniform nanoporous surface with high-crystalline hexagonal wurtzite structure. The ZnO films prepared with 20min has excitation absorption-edge at 369nm, which is blueshifted with respect to the bulk absorption-edge appearing at 380nm. The gap energy of ZnO film is decreased from 3.14eV to 3.09eV with increase of the deposition time, which can enhance the excitation of ZnO films by the near visible light, and is suitable for the application of photocatalyst of waste water cleaning and polluted air purification.

  16. Growth and characterization of ZnO thin films prepared by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Fahoume, M.; Maghfoul, O.; Aggour, M. [L.P.M.C., Faculte des Sciences, Universite Ibn Tofail, BP. 133-14000 Kenitra (Morocco); Hartiti, B. [L.P.M.A.E.R., Faculte des Sciences et Techniques, B.P. 146 Mohammedia (Morocco); Chraibi, F.; Ennaoui, A. [L.P.M., Faculte des Sciences, Universite Mohammed V, BP.1014 Rabat (Morocco)

    2006-06-15

    ZnO thin films were deposited on either indium tin oxide-coated glass or copper substrate by the electrodeposition process, using zinc chloride and flowing air as precursors. The effect of pH on the structural and morphological ZnO films was studied and the optimum deposition conditions have been outlined. The kinetics of the growth of the films have been investigated. We note that the rate of deposition of ZnO in an acidic solution was larger than in a basic solution. The structure of the films was studied using X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The surface morphology and thickness of the films were determined using scanning electron microscopy. The X-ray diffraction analysis shows that the films are polycrystalline with hexagonal crystal structure (zincite) at pH 4. The optical transmittance of ZnO decreases with varying film thickness. The optical energy bandgap was found to be 3.26eV. (author)

  17. Properties of ZnO thin films deposited by chemical bath deposition and post annealed

    International Nuclear Information System (INIS)

    Ouerfelli, J; Regragui, M; Morsli, M; Djeteli, G; Jondo, K; Amory, C; Tchangbedji, G; Napo, K; Bernede, J C

    2006-01-01

    ZnO thin films deposited by chemical bath deposition (CBD) have been studied using x-ray diffraction, scanning electron microscopy, electron microprobe analysis and electrical measurements. The optimum CBD conditions for achieving structured, but adherent, ZnO films are as follows. Zinc acetate (0.0188 mol l -1 ) and ethylenediamine (0.03 mol l -1 ) are mixed. The pH of the bath is raised by addition of a base (0.5 mol l -1 , NaOH). The solution is maintained at a temperature between 60 deg. C and 65 0 C, while the bath is continuously stirred. We proceeded to anneal in room air for 30 min at 300 deg. C and under vacuum for 2 h at 300 deg. C. All the films obtained are nearly stoichiometric ZnO films crystallized in the usual hexagonal structure. As expected the films are rough and porous. The main difference between the two ZnO film families is their conductivity. The conductivity of the films annealed under vacuum is five orders of magnitude higher than that of those annealed in room air

  18. Bias-voltage dependent ultraviolet photodetectors prepared by GaOx + ZnO mixture phase nanocrystalline thin films

    International Nuclear Information System (INIS)

    Wang, Rongxin; Yang, Lechen; Xu, Shijie; Zhang, Xiaodong; Dong, Xue; Zhao, Yingchun; Fu, Kai; Zhang, Baoshun; Yang, Hui

    2013-01-01

    Highlights: •GaO x + ZnO thin films sputtered and annealed exhibit interesting and unique optical properties, especially deep UV photo response. •GaO x + ZnO thin films can be used to fabricate efficient deep UV photodetectors. •The mixture phase nature of GaO x + ZnO thin films is revealed to be responsible for the unique characteristics of the photodetectors. •Two bands in UV range can be adjusted by a applied voltage when the PDs were fabricated using the mixture phase nature of GaO x + ZnO thin films. -- Abstract: Ultraviolet (UV) photodetectors were prepared by using the GaO x + ZnO mixture phase thin films sputtered on sapphire as the photoresponse layer. The devices show good photoresponse in UV range. More interestingly, the device responsivity in the wavelength less than 280 nm range rapidly increases with increasing the applied voltage and becomes dominant for the bias ⩾3.0 V. X-ray diffraction, absorption and cathodoluminescence measurements firmly reveal the mixture phases in the thin films. Electric field dependent detrapping of photo-excited carriers in nanocrystals in the films shall be responsible for the observed bias-voltage dependent deep UV photoresponse of the devices

  19. Annealing effect on the structural, morphological and electrical properties of TiO2/ZnO bilayer thin films

    Science.gov (United States)

    Khan, M. I.; Imran, S.; Shahnawaz; Saleem, Muhammad; Ur Rehman, Saif

    2018-03-01

    The effect of annealing temperature on the structural, morphological and electrical properties of TiO2/ZnO (TZ) thin films has been observed. Bilayer thin films of TiO2/ZnO are deposited on FTO glass substrate by spray pyrolysis method. After deposition, these films are annealed at 573 K, 723 K and 873 K. XRD shows that TiO2 is present in anatase phase only and ZnO is present in hexagonal phase. No other phases of TiO2 and ZnO are present. Also, there is no evidence of other compounds like Zn-Ti etc. It also shows that the average grain size of TiO2/ZnO films is increased by increasing annealing temperature. AFM (Atomic force microscope) showed that the average roughness of TiO2/ZnO films is decreased at temperature 573-723 K and then increased at 873 K. The calculated average sheet resistivity of thin films annealed at 573 K, 723 K and 873 K is 152.28 × 102, 75.29 × 102 and 63.34 × 102 ohm-m respectively. This decrease in sheet resistivity might be due to the increment of electron concentration with increasing thickness and the temperature of thin films.

  20. Hydrophobic ZnO nanostructured thin films on glass substrate by simple successive ionic layer absorption and reaction (SILAR) method

    International Nuclear Information System (INIS)

    Kumar, P. Suresh; Raj, A. Dhayal; Mangalaraj, D.; Nataraj, D.

    2010-01-01

    In the present work, ZnO nanostructured thin films were grown on glass substrates by a simple successive ionic layer absorption and reaction method (SILAR) process at relatively low temperature for its self cleaning application. X-ray diffraction, scanning electron microscopy and Photoluminescence (PL) spectra were used to characterize the prepared ZnO nanostructured film. XRD pattern clearly reviles that the grown ZnO nanostructure film reflect (002) orientation with c-direction. SEM image clearly shows the surface morphology with cluster of spindle and flower-like nanostructured with diameter various around 350 nm. Photoluminescence (PL) spectra of ZnO nanostructures film exhibit a UV emission around 385nm and visible emission in the range around 420-500 nm. Good water repellent behavior were observed for ZnO nanostructured film without any surface modification.

  1. Preferential orientation growth of ITO thin film on quartz substrate with ZnO buffer layer by magnetron sputtering technique

    Science.gov (United States)

    Du, Wenhan; Yang, Jingjing; Xiong, Chao; Zhao, Yu; Zhu, Xifang

    2017-07-01

    In order to improve the photoelectric transformation efficiency of thin-film solar cells, one plausible method was to improve the transparent conductive oxides (TCO) material property. In-doped tin oxide (ITO) was an important TCO material which was used as a front contact layer in thin-film solar cell. Using magnetron sputtering deposition technique, we prepared preferential orientation ITO thin films on quartz substrate. XRD and SEM measurements were used to characterize the crystalline structure and morphology of ITO thin films. The key step was adding a ZnO thin film buffer layer before ITO deposition. ZnO thin film buffer layer increases the nucleation center numbers and results in the (222) preferential orientation growth of ITO thin films.

  2. Improved damp heat stability of Ga-Doped ZnO thin film by pretreatment of the polyethylene terephthalate substrate

    Science.gov (United States)

    Kim, B. B.; Seo, S. G.; Lim, Y. S.; Choi, H.-S.; Seo, W.-S.; Park, H.-H.

    2013-09-01

    A study on the damp heat stability of transparent conducting ZnO thin film grown on a polyethylene terephthalate substrate (PET) is reported. By thermal annealing of the PET substrate at 100°C with Ar flow in a vacuum chamber prior to the sputtering growth of Ga-doped ZnO (GZO) thin film, significantly enhanced damp heat stability was achieved at 60°C with a 90% relative humidity. Electrical and structural characterizations of the GZO thin films were carried out and the effects of the pretreatment on the improved damp heat stability are discussed.

  3. Thermal activation of nitrogen acceptors in ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K.; Talla, K.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2010-06-15

    Nitrogen doping in ZnO is inhibited by spontaneous formation of compensating defects. Perfect control of the nitrogen doping concentration is required, since a high concentration of nitrogen could induce the formation of donor defects involving nitrogen. In this work, the effect of post-growth annealing in oxygen ambient on ZnO thin films grown by Metalorganic Chemical Vapor Deposition, using NO as both oxidant and nitrogen dopant, is studied. After annealing at 700 C and above, low-temperature photoluminescence shows the appearance of a transition at {proportional_to}3.23 eV which is interpreted as pair emission involving a nitrogen acceptor. A second transition at {proportional_to}3.15 eV is also discussed. This work suggests annealing as a potential means for p-type doping using nitrogen (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Perovskite solar cells based on nanocolumnar plasma-deposited ZnO thin films.

    Science.gov (United States)

    Ramos, F Javier; López-Santos, Maria C; Guillén, Elena; Nazeeruddin, Mohammad Khaja; Grätzel, Michael; Gonzalez-Elipe, Agustin R; Ahmad, Shahzada

    2014-04-14

    ZnO thin films having a nanocolumnar microstructure are grown by plasma-enhanced chemical vapor deposition at 423 K on pre-treated fluorine-doped tin oxide (FTO) substrates. The films consist of c-axis-oriented wurtzite ZnO nanocolumns with well-defined microstructure and crystallinity. By sensitizing CH3NH3PbI3 on these photoanodes a power conversion of 4.8% is obtained for solid-state solar cells. Poly(triarylamine) is found to be less effective when used as the hole-transport material, compared to 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD), while the higher annealing temperature of the perovskite leads to a better infiltration in the nanocolumnar structure and an enhancement of the cell efficiency. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Elaboration and Characterization of Sprayed Tb-Doped ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Amina ELFAKIR

    2014-05-01

    Full Text Available ZnO and Tb-doped ZnO (TZO thin films were deposited on glass substrate at 350 °C by spray pyrolysis technique. Structural, optical and electrical properties of the films were investigated as a function of dopant concentration, which was varied between 0 and 5 at % of terbium. TZO films were polycrystalline and exhibit hexagonal quartzite crystal structure with a preferential orientation along 2 direction. The AFM measurements show that the roughness of the films increased with Tb doping. All the TZO films exhibit a transmittance between 70 and 80 % in the visible range. The TZO films were n-type degenerate semiconductor with a lowest electrical resistivity of about 6.0´10- 2 W.cm.

  6. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2016-03-24

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  7. Optical and electrical characterization of aluminium doped ZnO layers

    Science.gov (United States)

    Major, C.; Nemeth, A.; Radnoczi, G.; Czigany, Zs.; Fried, M.; Labadi, Z.; Barsony, I.

    2009-08-01

    Al doped ZnO (ZAO) thin films (with Al-doping levels 2 at.%) were deposited at different deposition parameters on silicon substrate by reactive magnetron sputtering for solar cell contacts, and samples were investigated by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and spectroscopic ellipsometry (SE). Specific resistances were measured by the well known 4-pin method. Well visible columnar structure and in most cases voided other regions were observed at the grain boundaries by TEM. EELS measurements were carried out to characterize the grain boundaries, and the results show spacing voids between columnar grains at samples with high specific resistance, while no spacing voids were observed at highly conductive samples. SE measurements were evaluated by using the analytical expression suggested by Yoshikawa and Adachi [H. Yoshikawa, S. Adachi, Japanese Journal of Applied Physics 36 (1997) 6237], and the results show correlation between specific resistance and band gap energy and direct exciton strength parameter.

  8. Growth and optical properties of sol-gel ZnO thin films grown on R-plane sapphire substrates

    Science.gov (United States)

    Nam, Giwoong; Kim, Min Su; Lee, Jewon; Leem, Jae-Young; Lee, Sang-heon; Jung, Jae Hak; Kim, Jin Soo; Kim, Jong Su

    2013-04-01

    Zinc-oxide (ZnO) thin films were grown on R-plane sapphire substrates by using the sol-gel spincoating method. They were annealed at temperatures ranging from 600 to 800 °C. The effects of the annealing temperature on the properties of the ZnO thin films were investigated using scanning electron microscopy, X-ray diffraction, and photoluminescence. When the annealing temperature was increased to 700 °C, the grains of the ZnO thin films coalesced, their size increased, and the residual stress in the ZnO thin films was relaxed. In addition, the intensity of the deep-level emission peak caused by defects decreased, and the full width at half maximum of the near-bandedge emission peak decreased as the annealing temperature was increased to 700 °C. However, when the annealing temperature was increased further, degradation of the structural and the optical properties was observed. The reflective index of the ZnO thin films in the UV region increased as the annealing temperature was increased to 700 °C, and n in the visible region decreased with increasing wavelength. The extinction coefficient in the UV and the visible regions decreased as the annealing temperature was increased to 700 °C. However, inflection points in the reflective index and the extinction coefficient were observed with a further increase in the annealing temperature.

  9. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    Science.gov (United States)

    Maldonado, Arturo; Juarez, Héctor; Pacio, Mauricio; Perez, Rene

    2015-01-01

    Summary This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm), which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process. PMID:25977868

  10. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2015-04-01

    Full Text Available This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm, which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  11. Regulating effect of SiO2 interlayer on optical properties of ZnO thin films

    International Nuclear Information System (INIS)

    Xu, Linhua; Zheng, Gaige; Miao, Juhong; Su, Jing; Zhang, Chengyi; Shen, Hua; Zhao, Lilong

    2013-01-01

    ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. Regulating effect of SiO 2 interlayer with various thicknesses on the optical properties of ZnO/SiO 2 thin films was investigated deeply. The analyses of X-ray diffraction show that the ZnO layers in ZnO/SiO 2 nanocomposite films have a wurtzite structure and are preferentially oriented along the c-axis while the SiO 2 layers are amorphous. The scanning electron microscope images display that the ZnO layers are composed of columnar grains and the thicknesses of ZnO and SiO 2 layers are all very uniform. The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films, which is reflected in the following two aspects: (1) the transmittance of ZnO/SiO 2 nanocomposite films is increased; (2) the photoluminescence (PL) of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays. -- Highlights: ► ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. ► The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films. ► The photoluminescence of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. ► The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays

  12. Ga-doped ZnO thin film surface characterization by wavelet and fractal analysis

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Chenlei; Tang, Wu, E-mail: tang@uestc.edu.cn

    2016-02-28

    Graphical abstract: - Highlights: • Multi-resolution signal decomposition of wavelet transform is applied to Ga-doped ZnO thin films with various thicknesses. • Fractal properties of GZO thin films are investigated by box counting method. • Fractal dimension is not in conformity with original RMS roughness. • Fractal dimension mainly depends on the underside diameter (grain size) and distance between adjacent grains. - Abstract: The change in roughness of various thicknesses Ga-doped ZnO (GZO) thin films deposited by magnetron reactive sputtering on glass substrates at room temperature was measured by atomic force microscopy (AFM). Multi-resolution signal decomposition based on wavelet transform and fractal geometry was applied to process surface profiles, to evaluate the roughness trend of relevant frequency resolution. The results give a six-level decomposition and the results change with deposited time and surface morphology. Also, it is found that fractal dimension is closely connected to the underside diameter (grain size) and the distance between adjacent grains that affect the change rate of surface and the increase of the defects such as abrupt changes lead to a larger value of fractal dimension.

  13. Surface excitons on a ZnO (000-1) thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kuehn, S., E-mail: skuehn@mbi-berlin.de; Friede, S.; Elsaesser, T. [Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max Born Str. 2A, Berlin D-12489 (Germany); Sadofev, S.; Blumstengel, S.; Henneberger, F. [Institut für Physik, Humboldt-Universität zu Berlin, Newtonstrasse 15, Berlin D-12489 (Germany)

    2013-11-04

    Elementary excitations at the polar (000-1) surface of a 20 nm pseudomorphically grown ZnO thin film are examined by steady state and time-resolved photoluminescence spectroscopy at low temperature. We control the density of emission centers through the deposition of prototypical organic molecules with a carboxylic acid anchor group by the Langmuir-Blodgett technique. Knowledge of the precise film thickness, defect concentrations and number density of deposited molecules leads us to associate the surface exciton emission to defect-related localization centers that are generated through a photochemical process.

  14. Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Čížek, J.; Kužel, R.; Bulíř, Jiří; Lančok, Ján; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.; Anwand, W.; Brauer, G.

    2012-01-01

    Roč. 45, č. 22 (2012), 1-12 ISSN 0022-3727 R&D Projects: GA ČR(CZ) GAP108/11/0958; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : ZnO thin film * pulsed laser deposition * x-ray diffraction positron implantation spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.528, year: 2012 http://dx.doi.org/10.1088/0022-3727/45/22/225101

  15. Photoelectrocatrocatalytic hydrolysis of starch by using sprayed ZnO thin films

    Science.gov (United States)

    Sapkal, R. T.; Shinde, S. S.; Rajpure, K. Y.; Bhosale, C. H.

    2013-05-01

    Thin films of zinc oxide have been deposited onto glass/FTO substrates at optimized 400 °C by using a chemical spray pyrolysis technique. Deposited films are character photocatalytic activity by using XRD, an SEM, a UV-vis spectrophotometer, and a PEC single-cell reactor. Films are polycrystalline and have a hexagonal (wurtzite) crystal structure with c-axis (002) orientation growth perpendicular to the substrate surface. The observed direct band gap is about 3.22 eV for typical films prepared at 400 °C. The photocatalytic activity of starch with a ZnO photocatalyst has been studied by using a novel photoelectrocatalytic process.

  16. P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO

    Energy Technology Data Exchange (ETDEWEB)

    Liang, H.W.; Lu, Y.M.; Shen, D.Z.; Liu, Y.C.; Yan, J.F.; Li, B.H.; Zhang, Z.Z.; Zhang, J.Y.; Fan, X.W. [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dongnanhu Road, Changchun 130033 (China); Shan, C.X. [Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong (China)

    2005-05-01

    N-doped p-type ZnO thin films were grown by plasma molecular beam epitaxy (P-MBE) on c-plane sapphire (Al{sub 2}O{sub 3}) using radical NO as oxygen source and nitrogen dopant. The reproducible ZnO thin films have maximum net hole concentration (N{sub A}-N{sub D}) of 1.2 x 10{sup 18} cm{sup -3} and minimum resistivity of 9.36 {omega} cm. The influence of N incorporation on the quality of the ZnO thin films was studied using X-ray diffraction and absorption spectra. The photoluminescence spectra at 77 K of p-type ZnO thin films are dominated by the emission from donor-acceptor pair recombination. The formation mechanism of p-type ZnO is explained by the optical emission spectra of radical N{sub 2} and radical NO. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Zinc Vacancy induced magnetism in ZnO thin films and nanowires

    Science.gov (United States)

    Wang, Qian; Sun, Qiang; Jena, Puru

    2008-03-01

    Extensive theoretical studies based on first-principles have been carried out for the mechanism of magnetism in ZnO thin films and nanowires. It has been identified that the observed magnetism is introduced by Zn vacancy and is affected by its concentration. The main source of the magnetic moment comes from the unpaired 2p- electrons in oxygen sites around the Zn vacancy, instead of Zn 3d electrons. Moreover, Zn vacancy is more energetically favorable to reside on the surface, and its formation energy is found to be less than that of oxygen vacancy that does not introduce any magnetism. These findings suggest that the main vacancy species is Zn vacancy as expected by experiments. The present theoretical study not only provides some deep understandings for the experimentally observed magnetism in un-doped ZnO samples, but also suggests that introducing Zn vacancy is a natural and an effective way to fabricate magnetic ZnO structure for bio-magnetic applications.

  18. ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR

    Directory of Open Access Journals (Sweden)

    Martin Mikulics

    2012-07-01

    Full Text Available Presented experiments utilize methanolic solution of zinc acetyl-acetonate as a precursor and sapphire (001 as a substrate for deposition of thin films of ZnO. The X-ray diffraction analysis revealed polycrystalline character of prepared films with preferential growth orientation along c-axis. The roughness of prepared films was assessed by AFM microscopy and represented by roughness root mean square (RMS value in range of 1.8 - 433 nm. The surface morphology was mapped by scanning electron microscopy showing periodical structure with several local defects. The optical transmittance spectrum of ZnO films was measured in wavelength range of 200-1000 nm. Prepared films are transparent in visible range with sharp ultra-violet cut-off at approximately 370 nm. Raman spectroscopy confirmed wurtzite structure and the presence of compressive stress within its structure as well as the occurrence of oxygen vacancies. The four-point Van der Pauw method was used to study the transport prosperities. The resistivity of presented ZnO films was found 8 × 10–2 Ω cm with carrier density of 1.3 × 1018 cm–3 and electron mobility of 40 cm2 V–1 s–1.

  19. Morphological, structural and optical properties of ZnO thin films deposited by dip coating method

    Energy Technology Data Exchange (ETDEWEB)

    Marouf, Sara; Beniaiche, Abdelkrim; Guessas, Hocine, E-mail: aziziamor@yahoo.fr [Laboratoire des Systemes Photoniques et Optiques Non Lineaires, Institut d' Optique et Mecanique de Precision, Universite Ferhat Abbas-Setif 1, Setif (Algeria); Azizi, Amor [Laboratoire de Chimie, Ingenierie Moleculaire et Nanostructures, Universite Ferhat Abbas-Setif 1, Setif (Algeria)

    2017-01-15

    Zinc oxide (ZnO) thin films were deposited on glass substrate by dip coating technique. The effects of sol aging time on the deposition of ZnO films was studied by using the field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and optical transmission techniques. The morphology of the films strongly depends on preparation route and deposition technique. It is noteworthy that films deposited from the freshly prepared solution feature indistinct characteristics; had relatively poor crystalline quality and low optical transmittance in the visible region. The increase in sol aging time resulted in a gradual improvement in crystallinity (in terms of peak sharpness and peak intensity) of the hexagonal phase for all diffraction peaks. Effect of sol aging on optical transparency is quite obvious through increased transmission with prolonged sol aging time. Interestingly, 72-168 h sol aging time was found to be optimal to achieve smooth surface morphology, good crystallinity and high optical transmittance which were attributed to an ideal stability of solution. These findings present a better-defined and more versatile procedure for production of clean ZnO sols of readily adjustable nanocrystalline size. (author)

  20. Synthesis of ZnO Nanowires and Their Photovoltaic Application: ZnO Nanowires/AgGaSe2 Thin Film Core-Shell Solar Cell

    Directory of Open Access Journals (Sweden)

    Elif Peksu

    2015-01-01

    Full Text Available In this investigation, hydrothermal technique was employed for the synthesis of well-aligned dense arrays of ZnO nanowires (NWs on a wide range of substrates including silicon, soda-lime glass (SLG, indium tin oxide, and polyethylene terephthalate (PET. Results showed that ZnO NWs can be successfully grown on any substrate that can withstand the growth temperature (~90°C and precursor solution chemicals. Results also revealed that there was a strong impact of growth time and ZnO seed layer deposition route on the orientation, density, diameter, and uniformity of the synthesized nanowires. A core-shell n-ZnO NWs/p-AgGaSe2 (AGS thin film solar cell was fabricated as a device application of synthesized ZnO nanowires by decoration of nanowires with ~700 nm thick sputtering deposited AGS thin film layer, which demonstrated an energy conversion efficiency of 1.74% under 100 mW/cm2 of simulated solar illumination.

  1. Synthesis and characterization of porous structured ZnO thin film for dye sensitized solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Marimuthu, T.; Anandhan, N., E-mail: anandhan-kn@rediffmail.com; Mummoorthi, M. [School of Physics, Alagappa University, Karaikudi – 630 003 (India); Dharuman, V. [Department of Bioelectronics and Biosensors, Alagappa University, Karaikudi – 630 003 (India)

    2016-05-23

    Zinc oxide (ZnO) and zinc oxide/eosin yellow (ZnO/EY) thin films were potentiostatically deposited onto fluorine doped tin oxide (FTO) glass substrate. Effect of eosin yellow dye on structural, morphological and optical properties was studied. X-ray diffraction patterns, micro Raman spectra and photoluminescence (PL) spectra reveal hexagonal wurtzite structure with less atomic defects in 101 plane orientation of the ZnO/EY film. Scanning electron microscopy (SEM) images show flower for ZnO and porous like structure for ZnO/EY thin film, respectively. DSSC was constructed and evaluated by measuring the current density verses voltage curve.

  2. Structural and photoluminescence properties of Al-doped zinc oxide nanoparticles synthesized in polyol

    Energy Technology Data Exchange (ETDEWEB)

    Louhichi, Mariem, E-mail: louhichimariem89@gmail.com [Laboratoire Matériaux Avancés et Phénomènes Quantiques, Faculté des Sciences de Tunis, Université El Manar, 2092 Campus Universitaire, Tunis (Tunisia); Romdhane, Samir [Laboratoire Matériaux Avancés et Phénomènes Quantiques, Faculté des Sciences de Tunis, Université El Manar, 2092 Campus Universitaire, Tunis (Tunisia); Faculté des Sciences de Bizerte, Université de Carthage, 7021 Jarzouna (Tunisia); Fkiri, Anis; Smiri, Leila Samia [Unité de recherche Synthèse et Structure de Nanomatériaux UR11ES30, Faculté des Sciences de Bizerte, Université de Carthage, 7021 Jarzouna (Tunisia); Bouchriha, Habib [Laboratoire Matériaux Avancés et Phénomènes Quantiques, Faculté des Sciences de Tunis, Université El Manar, 2092 Campus Universitaire, Tunis (Tunisia)

    2015-11-30

    Highlights: • Al-doped ZnO nanoparticles have been prepared using a modified polyol process. • The hexagonal wurtzite structure and having a orientation along (1 0 1) plane. • The intensity of PL measurements decreased with increasing the Al concentration. - Abstract: Al-doped ZnO (AZO) nanoparticles have been prepared using a modified polyol process that makes use of di-ethylene glycol as a solvent. This procedure allows for obtaining nanoparticles with a narrowed size distribution, a controlled morphology and a high crystal quality. The prepared AZO nanoparticles were annealed at 400 °C. We studied the effect of doping and annealing on structural and optical properties. The structural investigations of the products confirmed the hexagonal wurtzite structure for all products and having a most preferred orientation along (1 0 1) plane. The results obtained by TEM revealed that the average particle size of the products decreases by doping and increases by annealing temperature. Energy dispersive spectroscopy (EDS) confirms the substitution of Al into ZnO lattice. Raman scattering analysis shows that the crystallinity of the material was improved by increasing the concentration of the dopant Al{sup 3+} and the photoluminescence spectra shows that the UV emission peak position of AZO nanoparticles exhibited a slight blue shift from 384 to 383 nm, and the intensity decreased with increasing the Al concentration, which is attributed to an increase in nonradiative recombination. However the UV emission peak position of AZO (0.2% and 0.6%) nanoparticles annealed at 400 °C exhibited a slight red shift due to the influence of the size effect on the energy level of confined excitons, because of the average size of the nanoparticles obviously became bigger with the increase of annealing temperature.

  3. Effect of high-energy electron beam irradiation on the transmittance of ZnO thin films on transparent substrates

    International Nuclear Information System (INIS)

    Yun, Eui-Jung; Jung, Jin-Woo; Han, Young-Hwan; Kim, Min-Wan; Lee, Byung Cheol

    2010-01-01

    We investigated in this study the effects of high-energy electron beam irradiation (HEEBI) on the optical transmittance of undoped ZnO films grown on transparent substrates, such as corning glass and polyethersulfone (PES) plastic substrates, with a radio frequency (rf) magnetron sputtering technique. The ZnO thin films were treated with HEEBI in air at RT with an electron beam energy of 1 MeV and doses of 4.7 x 10 14 - 4.7 x 10 16 electrons/cm 2 . The optical transmittance of the ZnO films was measured using an ultraviolet visible near-infrared spectrophotometer. The detailed estimation process for separating the transmittance of HEEBI-treated ZnO films from the total transmittance of ZnO films on transparent substrates treated with HEEBI is given in this paper. We concluded that HEEBI causes a slight suppression in the optical transmittance of ZnO thin films. We also concluded that HEEBI treatment with a high dose shifted the optical band gap (E g ) toward the lower energy region from 3.29 to 3.28 eV whereas that with a low dose unchanged E g at 3.25 eV. This shift suggested that HEEBI at RT at a high dose acts like an annealing treatment at high temperature.

  4. Ultrasonic spray pyrolysis growth of ZnO and ZnO:Al nanostructured films: Application to photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Kenanakis, G., E-mail: gkenanak@iesl.forth.gr [Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1385, Vassilika Vouton, 711 10 Heraklion, Crete (Greece); Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece); Katsarakis, N. [Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, P.O. Box 1385, Vassilika Vouton, 711 10 Heraklion, Crete (Greece); Center of Materials Technology and Photonics, School of Applied Technology, Technological Educational Institute of Crete, 710 04 Heraklion, Crete (Greece)

    2014-12-15

    Highlights: • Al–ZnO thin films and nanostructures were obtained by ultrasonic spray pyrolysis. • The texture and morphology of the samples depend on the deposition parameters. • The photocatalytic degradation of stearic acid was studied upon UV-A irradiation. - Abstract: Pure and Al-doped ZnO (Al = 1, 3, 5%) nanostructured thin films were grown at 400 °C on glass substrates by ultrasonic spray pyrolysis, a simple, environmental-friendly and inexpensive method, using aqueous solutions as precursors. The structural and morphological characteristics of the samples depend drastically on deposition parameters; ZnO nanostructured films, nanopetals and nanorods were systematically obtained by simply varying the precursor solution and/or the spraying time. Transmittance measurements have shown that all samples are transparent in the visible wavelength region. Finally, the photocatalytic properties of the samples were investigated against the degradation of stearic acid under UV-A light illumination (365 nm); both pure and Al-doped ZnO nanostructured thin films show good photocatalytic activity regarding the degradation of stearic acid, due to their good crystallinity and large surface area.

  5. Evidence of Negative Capacitance in Piezoelectric ZnO Thin Films Sputtered on Interdigital Electrodes.

    Science.gov (United States)

    Laurenti, Marco; Verna, Alessio; Chiolerio, Alessandro

    2015-11-11

    The scaling paradigm known as Moore's Law, with the shrinking of transistors and their doubling on a chip every two years, is going to reach a painful end. Another less-known paradigm, the so-called Koomey's Law, stating that the computing efficiency doubles every 1.57 years, poses other important challenges, since the efficiency of rechargeable energy sources is substantially constant, and any other evolution is based on device architecture only. How can we still increase the computational power/reduce the power consumption of our electronic environments? A first answer to this question comes from the quest for new functionalities. Within this aim, negative capacitance (NC) is becoming one of the most intriguing and studied phenomena since it can be exploited for reducing the aforementioned limiting effects in the downscaling of electronic devices. Here we report the evidence of negative capacitance in 80 nm thick ZnO thin films sputtered on Au interdigital electrodes (IDEs). Highly (002)-oriented ZnO thin films, with a fine-grained surface nanostructure and the desired chemical composition, are deposited at room temperature on different IDEs structures. Direct-current electrical measurements highlighted the semiconducting nature of ZnO (current density in the order of 1 × 10(-3) A/cm(2)). When turned into the alternating current regime (from 20 Hz to 2 MHz) the presence of NC values is observed in the low-frequency range (20-120 Hz). The loss of metal/semiconductor interface charge states under forward bias conditions, together with the presence of oxygen vacancies and piezoelectric/electrostriction effects, is believed to be at the basis of the observed negative behavior, suggesting that ZnO thin-film-based field-effect transistors can be a powerful instrument to go beyond the Boltzmann limit and the downscaling of integrated circuit elements required for the fabrication of portable and miniaturized electronic devices, especially for electric household

  6. Characterization of piesoelectric ZnO thin films and the fabrication of piezoelectric micro-cantilevers

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Raegan Lynn [Iowa State Univ., Ames, IA (United States)

    2005-01-01

    In Atomic Force Microscopy (AFM), a microcantilever is raster scanned across the surface of a sample in order to obtain a topographical image of the sample's surface. In a traditional, optical AFM, the sample rests on a bulk piezoelectric tube and a control loop is used to control the tip-sample separation by actuating the piezo-tube. This method has several disadvantages--the most noticeable one being that response time of the piezo-tube is rather long which leads to slow imaging speeds. One possible solution aimed at improving the speed of imaging is to incorporate a thin piezoelectric film on top of the cantilever beam. This design not only improves the speed of imaging because the piezoelectric film replaces the piezo-tube as an actuator, but the film can also act as a sensor. In addition, the piezoelectric film can excite the cantilever beam near its resonance frequency. This project aims to fabricate piezoelectric microcantilevers for use in the AFM. Prior to fabricating the cantilevers and also part of this project, a systematic study was performed to examine the effects of deposition conditions on the quality of piezoelectric ZnO thin films deposited by RF sputtering. These results will be presented. The deposition parameters that produced the highest quality ZnO film were used in the fabrication of the piezoelectric cantilevers. Unfortunately, the fabricated cantilevers warped due to the intrinsic stress of the ZnO film and were therefore not usable in the AFM. The complete fabrication process will be detailed, the results will be discussed and reasons for the warping will be examined.

  7. Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring

    Energy Technology Data Exchange (ETDEWEB)

    Nomenyo, K.; Kostcheev, S.; Lérondel, G. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Gadallah, A.-S. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Department of Laser Sciences and Interactions, National Institute of Laser Enhanced Sciences, Cairo University, Giza (Egypt); Rogers, D. J. [Nanovation, 8, route de Chevreuse, 78117 Châteaufort (France)

    2014-05-05

    Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguiding is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.

  8. Ultraviolet Stimulated Emission from Sol-Gel Spin Coated ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Ahmed S. Razeen

    2017-01-01

    Full Text Available Low cost ultraviolet stimulated emission has been generated using optical excitation of ZnO thin films deposited by sol-gel spin coating on n+ As-doped 100 Si-substrate. The number of deposited layers and the heat treatment have been investigated to obtain a film that can generate stimulated emission under optical excitation. The optimum condition for preparation of the film has been presented. X-ray diffraction and scanning electron microscope have been used for structural and morphological investigations. Input-output intensity dependence and spectral width, peak emission wavelength, and the quantum efficiency versus the pump intensity have been presented. A quantum efficiency of about 24.2% has been reported, a power exponent higher than 8 has been obtained in input-output intensity dependence, and a threshold of about 23 Mw/cm2 has been evaluated for the samples. The mechanism by which stimulated emission occurs has been discussed. The results show that sol-gel spin coating is a promising method for generating ultraviolet stimulated emission from ZnO thin films.

  9. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  10. Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Demes, Thomas [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Ternon, Céline, E-mail: celine.ternon@grenoble-inp.fr [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, LTM, F-38000 Grenoble (France); Morisot, Fanny [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, Grenoble-INP" 2, IMEP-LaHC, F-38000 Grenoble (France); Riassetto, David [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Legallais, Maxime [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, Grenoble-INP" 2, IMEP-LaHC, F-38000 Grenoble (France); Roussel, Hervé; Langlet, Michel [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France)

    2017-07-15

    Highlights: • ZnO nanowires are grown on sol-gel ZnO seed layers by hydrothermal synthesis. • Ultra-thin and high aspect ratio nanowires are obtained without using additives. • Nanowire diameter is 20–25 nm regardless of growth time and seed morphology. • A nanowire growth model is developed on the basis of thermodynamic considerations. • The nanowires are intended for integration into electrically conductive nanonets. - Abstract: Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20–25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20–25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

  11. The investigation of the Cr doped ZnO thin films deposited by thermionic vacuum arc technique

    Science.gov (United States)

    Mohammadigharehbagh, Reza; Pat, Suat; Musaoglu, Caner; Korkmaz, Şadan; Özen, Soner

    2018-02-01

    Cr doped ZnO thin films were prepared onto glass and polyethylene terephthalate (PET) substrates using thermionic vacuum arc. XRD patterns show the polycrystalline nature of the films. Cr, Zn, ZnO and Cr2O3 were detected in the layers. The mean crystallite sizes of the films were calculated about 20 nm for the films onto glass and PET substrates. The maximum dislocation density and internal strain values of the films are calculated. According to the optical analysis, the average transmittance and reflectance of the films were found to be approximately 53% and 16% for glass and PET substrates, respectively. The mean refractive index of the layer decreased to 2.15 from 2.38 for the PET substrate. The band gap values of the Cr-doped ZnO thin films were determined as 3.10 and 3.13 eV for glass and PET substrates.

  12. Effects of laser wavelength and fluence on the growth of ZnO thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Craciun, V.; Amirhaghi, S.; Craciun, D.; Elders, J.; Gardeniers, Johannes G.E.; Boyd, Ian W.

    Transparent, electrically conductive and c-axis oriented ZnO thin films have been grown by the pulsed laser deposition (PLD) technique on silicon and Corning glass substrates employing either a KrF excimer laser (λ = 248 nm) or a frequency-doubled Nd:YAG laser (λ = 532 nm). The crystalline

  13. Low temperature growth of highly transparent c-axis oriented ZnO thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Amirhaghi, S.; Craciun, V.; Craciun, D.; Elders, J.; Boyd, I.W.

    1994-01-01

    The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of thin films of ZnO grown on silicon and glass substrates by pulsed laser deposition have been studied. Regardless of thickness, all the grown layers are c-axis oriented

  14. Investigation of ZnO Thin Film Synthesized by Spray Pyrolysis Method as a Toxic Gases Sensor

    Science.gov (United States)

    Khojier, K.

    2017-10-01

    In recent years, environmental pollution, particularly toxic gases and vapors, have greatly increased; hence, their detection has become increasingly important. This paper investigates ZnO thin films fabricated by the spray pyrolysis method to fabricate a toxic gases sensor. A ZnO thin film of 100 nm thickness was deposited on a glass substrate at 100°C. The crystallographic structure was characterized by x-ray diffraction and a field-emission scanning electron microscope was employed to investigate the surface physical morphology and chemical composition. Sensitivity and selectivity of the sample were tested with respect to different toxic gases and vapors including carbon monoxide, ammonia, hydrogen sulfide, chlorine, nitrogen dioxide, benzene, formaldehyde and toluene in the temperature range of 100-300°C. The results showed that the ZnO thin film is more selective to NO2 gas than the other toxic gases and vapors in the studied temperature range. The ZnO thin film-based NO2 gas sensor also showed a good reproducibility, stability, and detection limit of 10 ppm at the operating temperature of 200°C.

  15. Study of p-type ZnO and MgZnO Thin Films for Solid State Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jianlin [Univ. of California, Riverside, CA (United States)

    2015-07-31

    This project on study of p-type ZnO and MgZnO thin films for solid state lighting was carried out by research group of Prof. Jianlin Liu of UCR during the four-year period between August 2011 and July 2015. Tremendous progress has been made on the proposed research. This final report summarizes the important findings.

  16. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    NARCIS (Netherlands)

    Hoye, R.L.Z.; Muñoz-Rojas, D.; Nelson, S.F.; Illiberi, A.; Poodt, P.; Roozeboom, F.; Macmanus-Driscoll, J.L.

    2015-01-01

    Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants

  17. The effects of ZnO buffer layers on the properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition

    International Nuclear Information System (INIS)

    Kim, K-W; Lugo, F J; Lee, J H; Norton, D P

    2012-01-01

    The properties of phosphorus doped ZnO thin films grown on sapphire by pulsed laser deposition were examined, specifically focusing on the effects of undoped ZnO buffer layers. In particular, buffer layers were grown under different conditions; the transport properties of as-deposited and rapid thermal annealed ZnO:P films were then examined. As-deposited films showed n-type conductivity. After rapid thermal annealing, the film on buffer layer grown at a low temperature showed the conversion of carrier type to p-type for specific growth conditions while the films deposited on buffer layer grown at a high temperature remained n-type regardless of growth condition. The films deposited on buffer layer grown at a low temperature showed higher resistivity and more significant change of the transport properties upon rapid thermal annealing. These results suggest that more dopants are incorporated in films with higher defect density. This is consistent with high resolution x-ray diffraction results for phosphorus doped ZnO films on different buffer layers. In addition, the microstructure of phosphorus doped ZnO films is substantially affected by the buffer layer.

  18. Textured surface structures formed using new techniques on transparent conducting Al-doped zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Miyata, Toshihiro; Uozaki, Ryousuke; Sai, Hitoshi; Koida, Takashi

    2016-01-01

    Surface-textured Al-doped ZnO (AZO) films formed using two new techniques based on magnetron sputtering deposition were developed by optimizing the light scattering properties to be suitable for transparent electrode applications in thin-film silicon solar cells. Scrambled egg-like surface-textured AZO films were prepared using a new texture formation technique that post-etched pyramidal surface-textured AZO films prepared under deposition conditions suppressing c-axis orientation. In addition, double surface-textured AZO films were prepared using another new texture formation technique that completely removed, by post-etching, the pyramidal surface-textured AZO films previously prepared onto the initially deposited low resistivity AZO films; simultaneously, the surface of the low resistivity films was slightly etched. However, the obtained very high haze value in the range from the near ultraviolet to visible light in the scrambled egg-like surface-textured AZO films did not contribute significantly to the obtainable photovoltaic properties in the solar cells fabricated using the films. Significant light scattering properties as well as a low sheet resistance could be achieved in the double surface-textured AZO films. In addition, a significant improvement of external quantum efficiency in the range from the near ultraviolet to visible light was achieved in superstrate-type n-i-p μc-Si:H solar cells fabricated using a double surface-textured AZO film prepared under optimized conditions as the transparent electrode. - Highlights: • Double surface-textured AZO films prepared using a new texture formation technique • Extensive light scattering properties with low sheet resistance achieved in the double surface-textured AZO films • Improved external quantum efficiency of μc-Si:H solar cells using a double surface-textured AZO film

  19. Functionalized carbon nanotubes in ZnO thin films for photoinactivation of bacteria

    International Nuclear Information System (INIS)

    Akhavan, O.; Azimirad, R.; Safa, S.

    2011-01-01

    Highlights: → Unfunctionalized and functionalized MWCNT/ZnO thin films were synthesized by sol-gel method. → Zn-O-C carbonaceous bonds formed in the functionalized MWCNT/ZnO thin films. → The functionalized MWCNT/ZnO had stronger photoinactivation of the bacteria than the unfunctionalize type. → 10 wt% functionalized MWCNT content had the optimum antibacterial property. - Abstract: Two types of unfunctionalized and functionalized multi-wall carbon nanotubes (MWCNTs) were prepared to be applied in fabrication of MWCNT-ZnO nanocomposite thin films with various MWCNT contents. X-ray photoelectron spectroscopy indicated formation of functional groups on surface of the functionalized MWCNTs in the MWCNT-ZnO nanocomposite. Formation of the effective carbonaceous bonds between the ZnO and the MWCNTs was also investigated through photoinactivation of Escherichia coli bacteria on surface of the both unfunctionalized and functionalized MWCNT-ZnO nanocomposites. The functionalized MWCNT-ZnO nanocomposites showed significantly stronger photoinactivation of the bacteria than the unfunctionalized ones, for all of the various MWCNT contents (from 2 to 30 wt%). While the functionalized MWCNT-ZnO nanocomposites with the optimum MWCNT content of 10 wt% inactivated whole of the bacteria after 10 min UV-visible light irradiation, the unfunctionalized ones could inactivate only 63% of the bacteria under the same conditions. The significant enhancement of the photoinactivation of the bacteria onto the surface of the functionalized MWCNT-ZnO nanocomposites was assigned to charge transfer through Zn-O-C bands formed between the Zn atoms of the ZnO film and oxygen atoms of the carboxylic functional groups of the functionalized MWCNTs.

  20. Plasmonic enhancement of UV emission from ZnO thin films induced by Al nano-concave arrays

    International Nuclear Information System (INIS)

    Norek, Małgorzata; Łuka, Grzegorz; Włodarski, Maksymilian

    2016-01-01

    Highlights: • Al nano-concave arrays with different interpore distance (D c ) were prepared. • PL of ZnO thin films deposited directly on the Al nano-concaves were studied. • The effect of 10 nm Al 2 O 3 spacer on PL emission from ZnO thin films was analyzed. • Plasmonic enhancement of the PL emission was dependent on the D c and the spacer. • The highest 9-fold enhancement was obtained for the Al/ZnO sample with D c ∼333 nm. - Abstract: Surface plasmons (SPs) supported by Al nano-concave arrays with increasing interpore distance (D c ) were used to enhance the ultraviolet light emission from ZnO thin films. Two sets of samples were prepared: in the first set the thin ZnO films were deposited directly on Al nanoconcaves (the Al/ZnO samples) and in the second set a 10 nm − Al 2 O 3 spacer was placed between the textured Al and the ZnO films (the Al/Al 2 O 3 -ALD/ZnO samples). In the Al/ZnO samples the enhancement was limited by a nonradiative energy dissipation due to the Ohmic loss in the Al metal. However, for the ZnO layer deposited directly on Al nanopits synthesized at 150 V (D c = 333 ± 18 nm), the largest 9-fold enhancement was obtained by achieving the best energy fit between the near band-edge (NBE) emission from ZnO and the λ (0,1) SPP resonance mode. In the Al/Al 2 O 3 -ALD/ZnO samples the amplification of the UV emission was smaller than in the Al/ZnO samples due to a big energy mismatch between the NBE emission and the λ (0,1) plasmonic mode. The results obtained in this work indicate that better tuning of the NBE − λ (0,1) SPP resonance mode coupling is possible through a proper modification of geometrical parameters in the Al/Al 2 O 3 -ALD/ZnO system such as Al nano-concave spacing and the thickness of the corresponding layer. This approach will reduce the negative influence of the non-radiative plasmonic modes and most likely will lead to further enhancement of the SP-modulated UV emission from ZnO thin films.

  1. Plasmonic enhancement of UV emission from ZnO thin films induced by Al nano-concave arrays

    Energy Technology Data Exchange (ETDEWEB)

    Norek, Małgorzata, E-mail: mnorek@wat.edu.pl [Department of Advanced Materials and Technologies, Faculty of Advanced Technologies and Chemistry, Military University of Technology, Kaliskiego 2, 00-908 Warsaw (Poland); Łuka, Grzegorz [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw (Poland); Włodarski, Maksymilian [Institute of Optoelectronics, Military University of Technology, Str. Kaliskiego 2, 00-908 Warszawa (Poland)

    2016-10-30

    Highlights: • Al nano-concave arrays with different interpore distance (D{sub c}) were prepared. • PL of ZnO thin films deposited directly on the Al nano-concaves were studied. • The effect of 10 nm Al{sub 2}O{sub 3} spacer on PL emission from ZnO thin films was analyzed. • Plasmonic enhancement of the PL emission was dependent on the D{sub c} and the spacer. • The highest 9-fold enhancement was obtained for the Al/ZnO sample with D{sub c} ∼333 nm. - Abstract: Surface plasmons (SPs) supported by Al nano-concave arrays with increasing interpore distance (D{sub c}) were used to enhance the ultraviolet light emission from ZnO thin films. Two sets of samples were prepared: in the first set the thin ZnO films were deposited directly on Al nanoconcaves (the Al/ZnO samples) and in the second set a 10 nm − Al{sub 2}O{sub 3} spacer was placed between the textured Al and the ZnO films (the Al/Al{sub 2}O{sub 3}-ALD/ZnO samples). In the Al/ZnO samples the enhancement was limited by a nonradiative energy dissipation due to the Ohmic loss in the Al metal. However, for the ZnO layer deposited directly on Al nanopits synthesized at 150 V (D{sub c} = 333 ± 18 nm), the largest 9-fold enhancement was obtained by achieving the best energy fit between the near band-edge (NBE) emission from ZnO and the λ{sub (0,1)} SPP resonance mode. In the Al/Al{sub 2}O{sub 3}-ALD/ZnO samples the amplification of the UV emission was smaller than in the Al/ZnO samples due to a big energy mismatch between the NBE emission and the λ{sub (0,1)} plasmonic mode. The results obtained in this work indicate that better tuning of the NBE − λ{sub (0,1)} SPP resonance mode coupling is possible through a proper modification of geometrical parameters in the Al/Al{sub 2}O{sub 3}-ALD/ZnO system such as Al nano-concave spacing and the thickness of the corresponding layer. This approach will reduce the negative influence of the non-radiative plasmonic modes and most likely will lead to further

  2. Effect of surface microstructure and wettability on plasma protein adsorption to ZnO thin films prepared at different RF powers.

    Science.gov (United States)

    Huang, Zhan-Yun; Chen, Min; Pan, Shi-Rong; Chen, Di-Hu

    2010-10-01

    In this paper, the adsorption behavior of plasma proteins on the surface of ZnO thin films prepared by radio frequency (RF) sputtering under different sputtering powers was studied. The microstructures and surface properties of the ZnO thin films were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible optical absorption spectroscopy and contact angle techniques. The results show that the ZnO thin films have better orientation of the (0 0 2) peak with increasing RF power, especially at around 160 W, and the optical band gap of the ZnO films varies from 3.2 to 3.4 eV. The contact angle test carried out by the sessile drop technique denoted a hydrophobic surface of the ZnO films, and the surface energy and adhesive work of the ZnO thin films decreased with increasing sputtering power. The amounts of human fibrinogen (HFG) and human serum albumin (HSA) adsorbing on the ZnO films and reference samples were determined by using enzyme-linked immunosorbent assay (ELISA). The results show that fewer plasma proteins and a smaller HFG/HSA ratio adsorb on the ZnO thin films' surface.

  3. Investigation of the correlation between dielectric function, thickness and morphology of nano-granular ZnO very thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gilliot, Mickaël, E-mail: mickael.gilliot@univ-reims.fr [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Hadjadj, Aomar [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Martin, Jérôme [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Université de Technologie de Troyes (France)

    2015-12-31

    Thin nano-granular ZnO layers were prepared using a sol–gel synthesis and spin-coating deposition process with a thickness ranging between 20 and 120 nm. The complex dielectric function (ϵ) of the ZnO film was determined from spectroscopic ellipsometry measurements. Up to a critical thickness close to 60 nm, the magnitude of both the real and the imaginary parts of ϵ rapidly increases and then slowly tends to values closer to the bulk ZnO material. This trend suggests a drastic change in the film porosity at both sides of this critical thickness, due to the pre-heating and post-crystallization processes, as confirmed by additional characterization of the structure and the morphology of the ZnO films. - Highlights: • c-Axis oriented ZnO thin films were grown with different morphological states. • The morphology and structures are controlled by controlling the thickness. • The optical properties are correlated to morphological evolution. • Two growth behaviors and property evolutions are identified around a critical thickness.

  4. Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

    KAUST Repository

    Baras, Abdulaziz

    2011-07-01

    Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

  5. Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

    Directory of Open Access Journals (Sweden)

    Ali Hassan

    2018-03-01

    Full Text Available Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (∼ 6 nm to 10 nm and surface roughness rms value 3 nm for thickness ∼315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD, Energy Dispersive X-ray Spectroscopy (EDS and X-ray Photoelectron Spectroscopy (XPS have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.

  6. Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

    Science.gov (United States)

    Hassan, Ali; Jin, Yuhua; Irfan, Muhammad; Jiang, Yijian

    2018-03-01

    Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM) analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (˜ 6 nm to 10 nm) and surface roughness rms value 3 nm for thickness ˜315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDS) and X-ray Photoelectron Spectroscopy (XPS) have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV) region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.

  7. ZnO nanostructures as electron extraction layers for hybrid perovskite thin films

    Science.gov (United States)

    Nikolaidou, Katerina; Sarang, Som; Tung, Vincent; Lu, Jennifer; Ghosh, Sayantani

    Optimum interaction between light harvesting media and electron transport layers is critical for the efficient operation of photovoltaic devices. In this work, ZnO layers of different morphologies are implemented as electron extraction and transport layers for hybrid perovskite CH3NH3PbI3 thin films. These include nanowires, nanoparticles, and single crystalline film. Charge transfer at the ZnO/perovskite interface is investigated and compared through ultra-fast characterization techniques, including temperature and power dependent spectroscopy, and time-resolved photoluminescence. The nanowires cause an enhancement in perovskite emission, which may be attributed to increased scattering and grain boundary formation. However, the ZnO layers with decreasing surface roughness exhibit better electron extraction, as inferred from photoluminescence quenching, reduction in the number of bound excitons, and reduced exciton lifetime in CH3NH3PbI3 samples. This systematic study is expected to provide an understanding of the fundamental processes occurring at the ZnO-CH3NH3PbI3 interface and ultimately, provide guidelines for the ideal configuration of ZnO-based hybrid Perovskite devices. This research was supported by National Aeronautics and Space administration (NASA) Grant No: NNX15AQ01A.

  8. Determination of the transport mechanisms in mixed conduction of reactively sputtered ZnO thin films

    International Nuclear Information System (INIS)

    Tuezemen, S; Guer, Emre; Dogan, S

    2008-01-01

    Material grown at highly Zn-rich conditions in reactive sputtering of ZnO thin films resulted in mixed conduction, indicating that stable p-type ZnO can be produced. In n-type conductivity, neutral flaw scattering transport mechanism via V O 0 centres seems to be dominant due to the existence of oxygen vacancies in high concentrations. An exponential decrease in electron mobility is observed upon cooling from room temperature to 210 K while the concentration of the inactive V O 0 state increases. This is also a cause of p-type conduction in the low temperature range ( O 0 scattering. Quantitative evaluations of V O centres show that fractional distribution of V O 0 , V O + and V O ++ charge states are, respectively, around 4%, 95% and 1% of the total [V O ] at the room temperature conditions. The energy of phonons interacting with the centre is estimated to be 38.5 meV which is a local phonon mode relaxation, most probably resulting in negative-U behaviour of V O centres

  9. Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell

    Directory of Open Access Journals (Sweden)

    Mi-jin Jin

    2013-10-01

    Full Text Available We studied the tuning of structural and optical properties of ZnO thin film and its correlation to the efficiency of inverted solar cell using plasma-enhanced atomic layer deposition (PEALD. The sequential injection of DEZn and O2 plasma was employed for the plasma-enhanced atomic layer deposition of ZnO thin film. As the growth temperature of ZnO film was increased from 100 °C to 300 °C, the crystallinity of ZnO film was improved from amorphous to highly ordered (002 direction ploy-crystal due to self crystallization. Increasing oxygen plasma time in PEALD process also introduces growing of hexagonal wurtzite phase of ZnO nanocrystal. Excess of oxygen plasma time induces enhanced deep level emission band (500 ∼ 700 nm in photoluminescence due to Zn vacancies and other defects. The evolution of structural and optical properties of PEALD ZnO films also involves in change of electrical conductivity by 3 orders of magnitude. The highly tunable PEALD ZnO thin films were employed as the electron conductive layers in inverted polymer solar cells. Our study indicates that both structural and optical properties rather than electrical conductivities of ZnO films play more important role for the effective charge collection in photovoltaic device operation. The ability to tune the materials properties of undoped ZnO films via PEALD should extend their functionality over the wide range of advanced electronic applications.

  10. Improvement of optical transmittance and electrical properties for the Si quantum dot-embedded ZnO thin film

    OpenAIRE

    Kuo, Kuang-Yang; Liu, Chuan-Cheng; Huang, Pin-Ruei; Hsu, Shu-Wei; Chuang, Wen-Ling; Chen, You-Jheng; Lee, Po-Tsung

    2013-01-01

    A Si quantum dot (QD)-embedded ZnO thin film is successfully fabricated on a p-type Si substrate using a ZnO/Si multilayer structure. Its optical transmittance is largely improved when increasing the annealing temperature, owing to the phase transformation from amorphous to nanocrystalline Si QDs embedded in the ZnO matrix. The sample annealed at 700?C exhibits not only high optical transmittance in the long-wavelength range but also better electrical properties including low resistivity, sma...

  11. Photoelectrocatrocatalytic hydrolysis of starch by using sprayed ZnO thin films

    International Nuclear Information System (INIS)

    Sapkal, R. T.; Shinde, S. S.; Rajpure, K.Y.; Bhosale, C. H.

    2013-01-01

    Thin films of zinc oxide have been deposited onto glass/FTO substrates at optimized 400 °C by using a chemical spray pyrolysis technique. Deposited films are character photocatalytic activity by using XRD, an SEM, a UV-vis spectrophotometer, and a PEC single-cell reactor. Films are polycrystalline and have a hexagonal (wurtzite) crystal structure with c-axis (002) orientation growth perpendicular to the substrate surface. The observed direct band gap is about 3.22 eV for typical films prepared at 400 °C. The photocatalytic activity of starch with a ZnO photocatalyst has been studied by using a novel photoelectrocatalytic process. (semiconductor materials)

  12. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Energy Technology Data Exchange (ETDEWEB)

    Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Ozcan, Yusuf [Department of Electricity and Energy, Pamukkale University, Denizli (Turkey); Orujalipoor, Ilghar [Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Huang, Yen-Chih; Jeng, U-Ser [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China); Ide, Semra [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)

    2016-06-07

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  13. ZnO and ZnSe thin films grown by Atomic Layer Epitaxy in a gas flow system

    Science.gov (United States)

    Godlewski, Marek; Guziewicz, Elzbieta; Kopalko, Krzysztof; Lusalowska, Elzbieta

    2003-03-01

    In the presentation we will briefly review our recent works on thin films of ZnO and ZnSe for possible applications in opto-electronics. Thin films of ZnO were grown by four different methods on either semiconductor substrates or on a glass plates. The latter system was successfully used as a substrate for deposition of amorphous GaN epilayers, using low temperature plasma-assisted MOCVD technique. Properties of ALE-grown ZnO films and of GaN epilayers grown on ZnO buffer layer will be shortly analyzed. Thin films of ZnSe were grown using synthesis from Zn and Se. These films show bright white color light emission. Temperature of the emission and brightness can be optimized by either modifications in a growth procedure or variations in excitation conditions. Nature of white emission and optimization procedures will be described. This work was partly supported by grant no. PBZ-KBN-044/P03/2001 of KBN. The ALE reactor was bought using SEZAM grant of Foundation for Polish Science.

  14. Influence of Annealing on Properties of Spray Deposited ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Kalyani Nadarajah

    2013-01-01

    Full Text Available Zinc Oxide (ZnO thin films were deposited on glass substrates via the spray pyrolysis technique. The films were subsequently annealed in ambient air from 300°C to 500°C. The morphology and structural properties of the thin films were studied by field emission scanning electron microscope (FESEM, atomic force microscopy (AFM, and X-ray diffractometry (XRD techniques. Electrical resistivity of the thin films was measured using a data acquisition unit. The optical properties of the films were characterized by UV-vis spectroscopy and photoluminescence (PL technique. X-ray diffraction data showed that the films were grown in the (002 direction with a hexagonal wurtzite structure. The average grain size ranged from 15 to 27 nm. Increasing annealing temperatures resulted in larger grain sizes and higher crystallinity, with the surface roughness of annealed films being more than twice if compared to unannealed film. The electrical resistivity of the films decreased with the increasing annealing temperature. The UV and visible band emissions were observed in the photoluminescence spectra, due to exciton and defect-related emissions, respectively. The transmission values of the films were as high as 90% within the visible range (400–700 nm.

  15. Synthesis, microstructural characterization and optical properties of undoped, V and Sc doped ZnO thin films

    International Nuclear Information System (INIS)

    Amezaga-Madrid, P.; Antunez-Flores, W.; Ledezma-Sillas, J.E.; Murillo-Ramirez, J.G.; Solis-Canto, O.; Vega-Becerra, O.E.; Martinez-Sanchez, R.; Miki-Yoshida, M.

    2011-01-01

    Research highlights: → Undoped, V and Sc doped ZnO thin films by Aerosol Assisted Chemical Vapour Deposition. → Optimum substrate temperatures of 673 K and 623 K for Sc and V doped films. → Around one third of the dopants in solution were deposited into the films. → Crystallite and grain size decreased with the increase of dopant concentration. → Optical band gap increased from 3.29 to 3.32 eV for undoped to 7 Sc/Zn at. %. - Abstract: Many semiconductor oxides (ZnO, TiO 2 , SnO 2 ) when doped with a low percentage of non-magnetic (V, Sc) or magnetic 3d (Co, Mn, Ni, Fe) cation behave ferromagnetically. They have attracted a great deal of interest due to the integration of semiconducting and magnetic properties in a material. ZnO is one of the most promising materials to carry out these tasks in view of the fact that it is optically transparent and has n or p type conductivity. Here, we report the synthesis, microstructural characterization and optical properties of undoped, V and Sc doped zinc oxide thin films. ZnO based thin films with additions of V and Sc were deposited by the Aerosol Assisted Chemical Vapour Deposition method. V and Sc were incorporated separately in the precursor solution. The films were uniform, transparent and non-light scattering. The microstructure of the films was characterized by Grazing Incidence X-ray Diffraction, Scanning Electron Microscopy, and Scanning Probe Microscopy. Average grain size and surface rms roughness were estimated by the measurement of Atomic Force Microscopy. The microstructure of doped ZnO thin films depended on the type and amount of dopant material incorporated. The optical properties were determined from specular reflectance and transmittance spectra. Results were analyzed to determine the optical constant and band gap of the films. An increase in the optical band gap with the content of Sc dopant was obtained.

  16. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Schmidt, J.A.; Arce, R.D. [Instituto de Física del Litoral (UNL-CONICET), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2016-04-30

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  17. Highly doped ZnO films deposited by spray-pyrolysis. Design parameters for optoelectronic applications

    International Nuclear Information System (INIS)

    Garcés, F.A.; Budini, N.; Schmidt, J.A.; Arce, R.D.

    2016-01-01

    Synthesis and preparation of ZnO films are relevant subjects for obtaining transparent and conducting layers with interesting applications in optoelectronics and photovoltaics. Optimization of parameters such as dopant type and concentration, deposition time and substrate temperature is important for obtaining ZnO layers with optimal properties. In this work we present a study about the induced effects of deposition time on optical and electrical properties of ZnO thin films. These films were deposited by spray pyrolysis of a suitable Zn precursor, obtained through the sol–gel method. The deposition time has direct incidence on internal stress in the crystal structure, generating defects that may affect transparency and electrical transport into the layers. We performed mosaicity measurements, through X-ray diffraction, and used it as a tool to get an insight on structural characteristics and homogeneity of ZnO layers. Also, through this technique, we analyzed thickness and doping effects on crystallinity and carrier transport properties. - Highlights: • Al-doped ZnO films with high conductivity and moderate Hall mobility were obtained. • Mosaicity between crystalline domains increased with film thickness. • Lattice parameters a and c diminished linearly as a function of Al concentration. • First steps for developing porous silicon/doped ZnO heterojunctions were presented.

  18. Electrodeposition and characterization of ZnO thin films using sodium thiosulfate as an additive for photovoltaic solar cells

    Science.gov (United States)

    Rahal, Hassiba; Kihal, Rafiaa; Affoune, Abed Mohamed; Ghers, Mokhtar; Djazi, Faycal

    2017-06-01

    Zinc oxide thin films have been grown by electrodeposition technique onto Cu and ITO-coated glass substrates from an aqueous zinc nitrate solution with addition of sodium thiosulfate at 90 °C. The effects of sodium thiosulfate on the electrochemical deposition of ZnO were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were obtained at -0.60 V vs. SCE and characterized by XRD, SEM, FTIR, optical, photoelectrochemical and electrical measurements. Thickness of the deposited film was measured to be 357 nm. X-ray diffraction results indicated that the synthesized ZnO has a pure hexagonal wurtzite structure with a marked preferential orientation along (002) plane. FTIR results confirmed the presence of ZnO films at peak 558 cm-1. SEM images showed uniform, compact morphology without any cracks and films composed of large flower-like ZnO agglomerates with star-shape. Optical properties of ZnO reveal a high optical transmission (> 80 % ) and high absorption coefficient (α > {10}5 {{cm}}-1) in visible region. The optical energy band gap was found to be 3.28 eV. Photoelectrochemical measurements indicated that the ZnO films had n-type semiconductor conduction. Electrical properties of ZnO films showed a low electrical resistivity of 6.54 {{Ω }}\\cdot {cm}, carrier concentration of -1.3× {10}17 {{cm}}-3 and mobility of 7.35 cm2 V-1 s-1. Project supported by the Algerian Ministry of Higher Education and Scientific Research, Algeria (No. J0101520090018).

  19. Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

    Energy Technology Data Exchange (ETDEWEB)

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)

    2011-07-15

    B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10{sup -4}{Omega} cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm{sup 2}/Vs and carrier concentrations on the order of 10{sup 20} cm{sup -3}. All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10{sup -3}-10{sup -4}{Omega} cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

  20. High energy electron irradiation effects on Ga-doped ZnO thin films for optoelectronic space applications

    Science.gov (United States)

    Serrao, Felcy Jyothi; Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2018-03-01

    Gallium-doped ZnO (GZO) thin films of thickness 394 nm were prepared by a simple, cost-effective sol-gel spin coating method. The effect of 8 MeV electron beam irradiation with different irradiation doses ranging from 0 to 10 kGy on the structural, optical and electrical properties was investigated. Electron irradiation influences the changes in the structural properties and surface morphology of GZO thin films. X-ray diffraction analysis showed that the polycrystalline nature of the GZO films is unaffected by the high energy electron irradiation. The grain size and the surface roughness were found maximum for the GZO film irradiated with 10 kGy electron dosage. The average transmittance of GZO thin films decreased after electron irradiation. The optical band gap of Ga-doped ZnO films was decreased with the increase in the electron dosage. The electrical resistivity of GZO films decreased from 4.83 × 10-3 to 8.725 × 10-4 Ω cm, when the electron dosage was increased from 0 to 10 kGy. The variation in the optical and electrical properties in the Ga-doped ZnO thin films due to electron beam irradiation in the present study is useful in deciding their compatibility in optoelectronic device applications in electron radiation environment.

  1. Matrix assisted pulsed laser evaporation of zinc benzoate for ZnO thin films and non-isothermal decomposition kinetics

    International Nuclear Information System (INIS)

    Rotaru, A.; Constantinescu, C.; Mandruleanu, Anca; Rotaru, P.; Moldovan, A.; Gyoryova, Katarina; Dinescu, Maria; Balek, V.

    2010-01-01

    Zinc(II) coordination compounds may provide a better source for ZnO thin films obtaining, since ZnO was found as the final product of their thermal decomposition. Thin films of zinc benzoate have been obtained on silicon substrates by matrix assisted pulsed laser evaporation (MAPLE) technique, using a Nd:YAG laser working at 266 nm. A comparative study of 1% zinc benzoate frozen solution in methanol at different fulences was carried out for 20,000 laser pulses; for the best deposition fluence a double deposition time was employed. Comparative thermal analysis and non-isothermal kinetic investigation of Zn(C 6 H 5 COO) 2 .2H 2 O dehydration and decomposition was performed. Thin films of ZnO have been obtained by thermal treatment of the MAPLE obtained thin films, according to the thermal analysis and decomposition kinetics of zinc benzoate. The obtained morphologies, before and after thermal treatment, have been investigated by atomic force microscopy (AFM).

  2. Optical and Electrical Characteristic of Layer-by-layer Sol-gel Spin Coated Nanoparticles ZnO Thin Films

    International Nuclear Information System (INIS)

    Shafinaz Sobihana Shariffudin; Farah Farliana Samat; Sukreen Hana; Mohamad Rusop

    2011-01-01

    Transparent ZnO thin films have been deposited on glass substrate using sol-gel spin coating technique. 0.35 M sol were prepared by dissolving zinc acetate dehydrate in 2-methoxyethanol with monoethanolamine as the stabilizer. In this paper, a novel method called layer-by-layer is introduced, where the thin film is not only dried after each layer is spin-coated, but also directly annealed at 500 degree Celsius to improve the crystallinity of the films. Samples without annealing were also prepared as the control sample. ZnO thin films were characterized using field emission scanning electron microscopy, X-ray diffraction, current-voltage measurement, UV-Vis spectroscopy and photoluminescence spectroscopy. The results revealed that layer by- layer ZnO thin films have better conductivity and higher intensity peak for PL spectra at visible spectra of 580 nm. FE-SEM images shows nanoparticles almost hexagonal shaped with high crystallinity compared to control samples. (author)

  3. Application of Thin ZnO ALD Layers in Fiber-Optic Fabry-Pérot Sensing Interferometers

    Directory of Open Access Journals (Sweden)

    Daria Majchrowicz

    2016-03-01

    Full Text Available In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28 segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD. Measurements were performed with the interferometer illuminated by two broadband sources operating at 1300 nm and 1550 nm. Reflected interference signal was acquired by an optical spectrum analyzer while the length of the air cavity was varied. Thickness of the ZnO layers used in the experiments was 50 nm, 100 nm, and 200 nm. Uncoated SMF-28 fiber was also used as a reference. Based on the results of measurements, the thickness of the ZnO layers and the length of the cavity were selected in order to achieve good visibility. Following, the interferometer was used to determine the refractive index of selected liquids.

  4. Low-temperature deposition of ZnO thin films on PET and glass substrates by DC-sputtering technique

    International Nuclear Information System (INIS)

    Banerjee, A.N.; Ghosh, C.K.; Chattopadhyay, K.K.; Minoura, Hideki; Sarkar, Ajay K.; Akiba, Atsuya; Kamiya, Atsushi; Endo, Tamio

    2006-01-01

    The structural, optical and electrical properties of ZnO thin films (260 - 490 nm thick) deposited by direct-current sputtering technique, at a relatively low-substrate temperature (363 K), onto polyethylene terephthalate and glass substrates have been investigated. X-ray diffraction patterns confirm the proper phase formation of the material. Optical transmittance data show high transparency (80% to more than 98%) of the films in the visible portion of solar radiation. Slight variation in the transparency of the films is observed with a variation in the deposition time. Electrical characterizations show the room-temperature conductivity of the films deposited onto polyethylene terephthalate substrates for 4 and 5 h around 0.05 and 0.25 S cm -1 , respectively. On the other hand, for the films deposited on glass substrates, these values are 8.5 and 9.6 S cm -1 for similar variation in the deposition time. Room-temperature conductivity of the ZnO films deposited on glass substrates is at least two orders of magnitude higher than that of ZnO films deposited onto polyethylene terephthalate substrates under identical conditions. Hall-measurements show the maximum carrier concentration of the films on PET and glass substrate around 2.8 x 10 16 and 3.1 x 10 2 cm -3 , respectively. This report will provide newer applications of ZnO thin films in flexible display technology

  5. Synthesis, Optical and Photoluminescence Properties of Cu-Doped Zno Nano-Fibers Thin Films: Nonlinear Optics

    Science.gov (United States)

    Ganesh, V.; Salem, G. F.; Yahia, I. S.; Yakuphanoglu, F.

    2018-03-01

    Different concentrations of copper-doped zinc oxide thin films were coated on a glass substrate by sol-gel/spin-coating technique. The structural properties of pure and Cu-doped ZnO films were characterized by different techniques, i.e., atomic force microscopy (AFM), photoluminescence and UV-Vis-NIR spectroscopy. The AFM study revealed that pure and doped ZnO films are formed as nano-fibers with a granular structure. The photoluminescence spectra of these films showed a strong ultraviolet emission peak centered at 392 nm and a strong blue emission peak cantered at 450 nm. The optical band gap of the pure and copper-doped ZnO thin films calculated from optical transmission spectra (3.29-3.23 eV) were found to be increasing with increasing copper doping concentration. The refractive index dispersion curve of pure and Cu-doped ZnO film obeyed the single-oscillator model. The optical dispersion parameters such as E o , E d , and n_{∞}2 were calculated. Further, the nonlinear refractive index and nonlinear optical susceptibility were also calculated and interpreted.

  6. ZnO thin films fabricated by chemical bath deposition, used as buffer layer in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lare, Y. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Godoy, A. [Facultad Ciencias de la Salud, Universidad Diego Portales, Ejercito 141, Santiago de Chile (Chile); Cattin, L. [Universite de Nantes, Nantes Atlantique Universites, IMN, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Jondo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); Abachi, T. [Ecole Normale Superieure, Kouba, Alger (Algeria); Diaz, F.R. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Morsli, M. [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France); Napo, K. [Laboratoire sue l' Energie Solaire, Universite de Lome, Lome (Togo); del Valle, M.A. [Laboratorio de Polimeros, Facultad de Quimica, Pontificia Universidad Catolica de Chile, Casilla 306, Correo 22, Santiago (Chile); Bernede, J.C., E-mail: jean-christian.bernede@univ-nantes.fr [Universite de Nantes, Nantes Atlantique Universites, LAMP, EA 3825, Faculte des Sciences et des Techniques, 2 rue de la Houssiniere, BP 92208, Nantes, F-44000 France (France)

    2009-04-15

    ZnO thin films synthetized by chemical bath deposition are used as buffer layer between the anode and the organic electron donor in organic solar cells. Films deposited from zinc nitrate solutions are annealed in room air at 300 deg. C for half an hour. The X-ray diffraction and microanalysis studies show that ZnO polycrystalline thin films are obtained. The solar cells used are based on the couple copper phthalocyanine as electron donor and (N,N-diheptyl-3,4,9,10-perylenetetracarboxylicdiimide-PTCDI-C7) as electron acceptor. It is shown that the presence of the ZnO buffer layer improves the energy conversion efficiency of the cells. Such improvement could be attributed to a better energy level alignment at the anode/electron donor interface. The anode roughness induced by the ZnO buffer layer can also transform the planar interface organic electron donor/electron acceptor into roughen topography. This increases the interface area, where carrier separation takes place, which improves solar cells performances.

  7. An economic approach to fabricate photo sensor based on nanostructured ZnO thin films

    Science.gov (United States)

    Huse, Nanasaheb; Upadhye, Deepak; Sharma, Ramphal

    2016-05-01

    Nanostructural ZnO Thin Films have been synthesized by simple and economic Chemical Bath Deposition technique onto glass substrate with bath temperature at 60°C for 1 hour. Structural, Optical, Electrical and topographical properties of the prepared Thin Films were investigated by GIXRD, I-V Measurement System, UV-Visible Spectrophotometer and AFM respectively. Calculated lattice parameters are in good agreement with the standard JCPDS card (36-1451) values, exhibits Hexagonal Wurtzite crystal structure. I-V Measurement curve has shown ohmic nature in dark condition and responds to light illumination which reveals Photo sensor properties. After illumination of 60W light, decrease in resistance was observed from 110.9 KΩ to 104.4 KΩ. The change in current and calculated Photo sensitivity was found to be 3.51 µA and 6.3% respectively. Optical band gap was found to be 3.24 eV. AFM images revealed uniform deposition over entire glass substrate with 32.27 nm average roughness of the film.

  8. Enhancing Optical and Electrical Properties of La- and Al-Codoped ZnO Thin Films Prepared by Sol-Gel Method -La Codoping Effect.

    Science.gov (United States)

    He-Yan, Hai

    2017-07-10

    Backgroud: The transparent conductive ZnO film is widely used in solar cell. Enhancing the transmittance and electrical conductivity of the films is attracting many attentions to improve cell efficiency. This work focuses on the fabrication and potential application of the various cation-doped ZnO materials in recent patents and literature and then presents the La codoping effects of Al-doped ZnO films. Films were deposited by a sol-gel route and characterized by various techniques including X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, UV-vis and luminescent spectroscopies, and electrical conduction analysis. The UV-vis. transmittance and band gap increased and then decreased, whereas the resistivity decreased and then slightly increased with the increase in La/Al ratio. The La/Al ratio of 0.0105 led to a maximal transmittance, a widest band gap, and a minimal resistivity. The films also illustrated a near band gap emission and some intrinsic defect-related emissions with varied intensity with La/Al ratio. This work reveal that the electrical and optical properties of the ZnO:Al films can be well enhanced by La codoping. This is significant to the applications of the ZnO:Al materials. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  9. Determination of the transport mechanisms in mixed conduction of reactively sputtered ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tuezemen, S; Guer, Emre; Dogan, S [Department of Physics, Faculty of Arts and Sciences, Atatuerk University, 25240, Erzurum (Turkey)], E-mail: stuzemen@atauni.edu.tr

    2008-07-07

    Material grown at highly Zn-rich conditions in reactive sputtering of ZnO thin films resulted in mixed conduction, indicating that stable p-type ZnO can be produced. In n-type conductivity, neutral flaw scattering transport mechanism via V{sub O}{sup 0} centres seems to be dominant due to the existence of oxygen vacancies in high concentrations. An exponential decrease in electron mobility is observed upon cooling from room temperature to 210 K while the concentration of the inactive V{sub O}{sup 0} state increases. This is also a cause of p-type conduction in the low temperature range (<170 K). Mobility of holes has rather usual behaviour as the longitudinal acoustic phonon scattering takes place at temperatures 35-170 K. Ionized acceptor scattering is shown to be effective for holes below 35 K. P-type conduction is not affected by V{sub O}{sup 0} scattering. Quantitative evaluations of V{sub O} centres show that fractional distribution of V{sub O}{sup 0}, V{sub O}{sup +} and V{sub O}{sup ++} charge states are, respectively, around 4%, 95% and 1% of the total [V{sub O}] at the room temperature conditions. The energy of phonons interacting with the centre is estimated to be 38.5 meV which is a local phonon mode relaxation, most probably resulting in negative-U behaviour of V{sub O} centres.

  10. Structural and magnetic properties of cobalt-doped ZnO thin films on sapphire (0 0 0 1) substrate deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shanying, E-mail: yshy_150@163.com [Laiwu Vocational and Technical College, Laiwu, Shandong Province, 271100 (China); Lv, Rongqing [Laiwu Vocational and Technical College, Laiwu, Shandong Province, 271100 (China); Wang, Changzheng [School of Physics Science and Information Engineering, Liaocheng University, Liaocheng, Shandong Province, 252059 (China); Liu, Yunyan [School of Science, Shandong University of Technology, Zibo, Shandong Province, 255049 (China); Song, Zeqing [Laiwu Vocational and Technical College, Laiwu, Shandong Province, 271100 (China)

    2013-12-05

    Highlights: •Co-doped ZnO thin films on sapphire (0 0 0 1) substrates were deposited. •ZnLMM Auger spectrum indicated that Zn interstitials existed in thin films. •The lattice constant increasing was ascribed to the stress and interstitial atoms. •The average moment per Co atom related to the distribution of Co{sup 2+} ions and defects. -- Abstract: Co-doped ZnO thin films on sapphire (0 0 0 1) substrates were deposited by PLD at various substrate temperatures in a one Pa oxygen ambient condition. The structural and magnetic properties of as-grown thin films were characterized by using XRD, UV–Visible absorption spectrophotometer, XPS and AGM. All samples possessed wurtzite hexagonal structure of ZnO. Co atoms incorporated into ZnO matrix and substituted for Zn in ZnO lattice, and Zn interstitials existed in as-grown thin films. The c-axis lattice constants of as-deposited thin films were larger than the standard data. Crystallization of as-prepared thin films increased and then decreased with substrate temperatures enhancing. All samples exhibited room-temperature ferromagnetism. The average moment per Co atom was much smaller than that of Co{sup 2+} (3d{sup 7}), due to the different distribution of Co{sup 2+} ions and defects, as well as the different defect concentrations in thin films.

  11. Identification of Tequila with an Array of ZnO Thin Films: A Simple and Cost-Effective Method

    Directory of Open Access Journals (Sweden)

    Pedro Estanislao Acuña-Avila

    2017-12-01

    Full Text Available An array of ZnO thin film sensors was obtained by thermal oxidation of physical vapor deposited thin Zn films. Different conditions of the thermal treatment (duration and temperature were applied in view of obtaining ZnO sensors with different gas sensing properties. Films having undergone a long thermal treatment exhibited high responses to low ethanol concentrations, while short thermal treatments generally led to sensors with high ethanol sensitivity. The sensor array was used to distinguish among Tequilas and Agave liquor. Linear discriminant analysis and the multilayer perceptron neural network reached 100% and 86.3% success rates in the discrimination between real Tequila and Agave liquor and in the identification of Tequila brands, respectively. These results are promising for the development of an inexpensive tool offering low complexity and cost of analysis for detecting fraud in spirits.

  12. Effect of surface carbon contamination on the chemical states of N-doped ZnO thin films

    Science.gov (United States)

    Zhang, Hong; Li, Wanjun; Qin, Guoping; Fang, Liang; Ruan, Haibo; Tan, Mi; Wu, Fang; Kong, Chunyang

    2018-02-01

    Nitrogen-doped ZnO thin films [ZnO:N] and intentional surface carbon-contaminated ZnO:N thin films [ZnO:N@C] were grown on quartz substrates by radio frequency magnetron sputtering deposition method. The structural, electrical and optical properties as well as chemical states of elements were investigated by means of X-ray diffraction (XRD), Hall effect measurement (Hall), UV-Vis-Near infrared spectrophotometer and X-ray photoelectron spectroscopy (XPS). The results indicate that surface carbon contamination almost does not affect the band gap of ZnO:N thin films but has a strong impact on the crystal quality of ZnO:N thin film surface and results in a significant increase in tensile stress. The XPS analysis shows that the effect of surface carbon contamination treatment on the chemical states of ZnO:N thin films is remarkable. Because the stability of Zn-N bonds in N-rich local environments is nowhere near that of those in O-rich local environments, the N atoms in N-rich local environments easily bond with surface carbon atoms to form undesirable C-N bonds, thus resulting in a decrease of NO acceptors in N-rich local environments. Obviously, it is unfavorable to subsequently prepare high stability of N-doped p-type ZnO thin films.

  13. Correlation between structural and electrical properties of PLD prepared ZnO thin films used as a photodetector material

    Energy Technology Data Exchange (ETDEWEB)

    Triolo, C., E-mail: trioloc@unime.it [Dipartimento di Fisica e di Scienze della Terra, Università degli Studi di Messina, Viale F. Stagno d‘Alcontres 31, 98166, Messina (Italy); Fazio, E.; Neri, F.; Mezzasalma, A.M. [Dipartimento di Fisica e di Scienze della Terra, Università degli Studi di Messina, Viale F. Stagno d‘Alcontres 31, 98166, Messina (Italy); Trusso, S. [CNR-IPCF Istituto per i Processi Chimico-Fisici, Viale F. Stagno d’Alcontres 37, 98158, Messina (Italy); Patanè, S. [Dipartimento di Fisica e di Scienze della Terra, Università degli Studi di Messina, Viale F. Stagno d‘Alcontres 31, 98166, Messina (Italy)

    2015-12-30

    Highlights: • ZnO thin filmswere deposited by pulsed laser ablation from a metallic zinc target in a controlled oxygen atmosphere in shock wave regime. • The samples morphology is tuned, varying the growth temperature. • The transport properties were measured at RT and at 30 K under vacuumboth illuminating the sample by an UV laser and in dark conditions. • All samples are sensible to the UV radiations; the oxygen chemisorbed on the grain surface affects the speed of photoresponse. - Abstract: The electrical transport properties of a set of zinc oxide (ZnO) thin films, prepared by pulsed laser ablation, were investigated at the temperatures of 30 K and 300 K. Information about the structural and morphological properties of the samples were obtained by means of atomic force microscopy (AFM) and X-ray diffraction (XRD). A significant variation in the surface morphology and photoresponse characteristics of the ZnO thin films were observed as a function of the deposition temperature. Upon increasing the deposition temperature, the surface topography changes from a more fine-grained to a more coarse-grained structure, showing a tetragonal wurtzite crystalline structure. Time resolved photocurrent measurements showed significantly variations as function of the observed samples morphologies. A photocurrent value of about three order of magnitude larger is observed for samples showing a more coarse-grained structure with respect to the fine-grained ones. Such a result is interpreted as due to the contributions of both “bulk” and defect centers that affect the conduction mechanisms and influence both the photoconductivity values and the photoresponse speed. The observed decay times are very long with respect to films grown by other techniques, due to the reduction of the surface localized centers of defect available for recombination. In this context, the sample morphology appears to be a key parameter to control the photoconductivity in ZnO thin films.

  14. The frequency-dependent AC photoresistance behavior of ZnO thin films grown on different sapphire substrates.

    Science.gov (United States)

    Cholula-Díaz, Jorge L; Barzola-Quiquia, José; Videa, Marcelo; Yin, Chunhai; Esquinazi, Pablo

    2017-09-13

    Zinc oxide (ZnO) thin films were grown by pulsed layer deposition under an N 2 atmosphere at low pressures on a- and r-plane sapphire substrates. Structural studies using X-ray diffraction confirmed that all films had a wurtzite phase. ZnO thin films on a- and r-plane sapphire have grown with orientations along the [0002] and [112[combining macron]0] directions, respectively. Room temperature photoluminescence measurements indicate that the presence of native point defects (interstitial zinc, oxygen vacancies, oxygen antisites and zinc vacancies) is more preponderant for ZnO thin films grown on the r-plane sapphire substrate than the sample grown on the a-plane sapphire substrate. Room temperature impedance spectroscopy measurements were performed in an alternating current frequency range from 40 to 10 5 Hz in the dark and under normal light. An unusual positive photoresistance effect is observed at frequencies above 100 kHz, which we suggest to be due to intrinsic defects present in the ZnO thin films. Furthermore, an analysis of the optical time response revealed that the film grown on the r-plane sapphire substrate responds faster (characteristic relaxation times for τ 1 , τ 2 and τ 3 of 0.05, 0.26 and 6.00 min, respectively) than the film grown on the a-plane sapphire substrate (characteristic relaxation times for τ 1 , τ 2 and τ 3 of 0.10, 0.73 and 4.02 min, respectively).

  15. Effects of deposition temperature on the crystallinity of Ga-doped ZnO thin films on glass substrates prepared by sputtering method

    International Nuclear Information System (INIS)

    Park, Yu Jin; Kim, Hyuk Nyun; Shin, Hyun Ho

    2009-01-01

    The microstructural characterization of Ga-doped (5 at.%) ZnO thin film was conducted by a transmission electron microscopy study. The atomic arrangement of Ga-doped ZnO having an wurtzite structure was identified by the experimental HRTEM and Fourier filtered images as well as the electron diffractions. As a result, we have revealed that the orientation and defect density of Ga-doped ZnO thin films were greatly influenced by the deposition temperature, resulting in the variation of electrical property. In other words, the tendency forming a c-axis oriented texture grows up and the defects such as dislocations and stacking faults decrease, as the temperature of sputtering deposition increases. Consequently, the electrical properties of Ga-doped ZnO thin films can be controlled by the deposition temperature directly related with the defect density.

  16. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Chebil, W., E-mail: Chbil.widad@live.fr [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse (Tunisia); Fargi, A. [Laboratoire de Microélectronique et Instrumentation, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’environnement, 5019 Monastir (Tunisia); Azeza, B.; Zaaboub, Z. [Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); and others

    2015-10-15

    Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

  17. Highly transparent and conductive ZnO:Al thin films prepared by vacuum arc plasma evaporation

    Science.gov (United States)

    Miyata, Toshihiro; Minamino, Youhei; Ida, Satoshi; Minami, Tadatsugu

    2004-07-01

    A vacuum arc plasma evaporation (VAPE) method using both oxide fragments and gas sources as the source materials is demonstrated to be very effective for the preparation of multicomponent oxide thin films. Highly transparent and conductive Al-doped ZnO (AZO) thin films were prepared by the VAPE method using a ZnO fragment target and a gas source Al dopant, aluminum acethylacetonate (Al(C5H7O2)3) contained in a stainless steel vessel. The Al content in the AZO films was altered by controlling the partial pressure (or flow rate) of the Al dopant gas. High deposition rates as well as uniform distributions of resistivity and thickness on the substrate surface were obtained on large area glass substrates. A low resistivity on the order of 10-4 Ω cm and an average transmittance above 80% in the visible range were obtained in AZO thin films deposited on glass substrates. .

  18. Fabrication of thin ZnO films with wide-range tuned optical properties by reactive magnetron sputtering

    Science.gov (United States)

    Davydova, A.; Tselikov, G.; Dilone, D.; Rao, K. V.; Kabashin, A. V.; Belova, L.

    2018-02-01

    We report the manufacturing of thin zinc oxide films by reactive magnetron sputtering at room temperature, and examine their structural and optical properties. We show that the partial oxygen pressure in DC mode can have dramatic effect on absorption and refractive index (RI) of the films in a broad spectral range. In particular, the change of the oxygen pressure from 7% to 5% can lead to either conventional crystalline ZnO films having low absorption and characteristic descending dependence of RI from 2.4–2.7 RIU in the visible to 1.8–2 RIU in the near-infrared (1600 nm) range, or to untypical films, composed of ZnO nano-crystals embedded into amorphous matrix, exhibiting unexpectedly high absorption in the visible–infrared region and ascending dependence of RI with values varying from 1.5 RIU in the visible to 4 RIU in the IR (1600 nm), respectively. Untypical optical characteristics in the second case are explained by defects in ZnO structure arising due to under-oxidation of ZnO crystals. We also show that the observed defect-related film structure remains stable even after annealing of films under relatively high temperatures (30 min under 450 °C). We assume that both types of films can be of importance for photovoltaic (as contact or active layers, respectively), as well as for chemical or biological sensing, optoelectronics etc.

  19. Photovoltaic Properties of Co-doped ZnO Thin Film on Glass Substrate

    International Nuclear Information System (INIS)

    Sabia Aye; Zin Ma Ma; May Nwe Oo; Than Than Win; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    Cobalt (Co) 0.4 mol doped zinc oxide (ZnO) fine powder was prepared by solid state mixed oxide route. Phase formation and crystal structure of Co-doped ZnO (CZO) powder were examined by X-ray diffraction (XRD). Scanning Electron Microscopy (SEM) was used to observe the micro structure of Co doped ZnO powder. Energy Dispersive X-ray Fluorescent (EDXRF) technique gave the elemental content of cobalt and zinc. Co-doped ZnO film was formed on glass substrate by spin coating technique. Photovoltaic properties of CZO/glass cell were measured.

  20. Praseodymium - A Competent Dopant for Luminescent Downshifting and Photocatalysis in ZnO Thin Films

    Science.gov (United States)

    Narayanan, Nripasree; Deepak, N. K.

    2018-05-01

    Highly transparent and conducting Zinc oxide (ZnO) thin films doped with Praseodymium (Pr) were deposited on glass substrates by using the spray pyrolysis method. The X-ray diffraction (XRD) analysis revealed the polycrystallinity of the deposited films with a hexagonal wurtzite structure, whereas the energy-dispersive X-ray spectroscopy (EDX) analysis confirmed the incorporation of Pr in the films. The optical energy gap decreased by Pr doping due to the merging of the conduction band with the impurity bands formed within the forbidden gap. The room temperature photoluminescence spectra of the Pr-doped film showed enhancement of visible emission, suggesting efficient luminescent downshifting. The photocatalytic activity of the Pr-doped films is higher than that of undoped films due to the effective suppression of the rapid recombination of the photo-generated electron-hole pairs. The impurity levels formed within the forbidden gap act as efficient luminescent centers and electron traps, which lead to luminescent downshifting and enhanced photocatalytic activity.

  1. Surface characterization and cathodoluminescence degradation of ZnO thin films

    Science.gov (United States)

    Hasabeldaim, E.; Ntwaeaborwa, O. M.; Kroon, R. E.; Craciun, V.; Coetsee, E.; Swart, H. C.

    2017-12-01

    ZnO thin films were successfully synthesized by the sol-gel method using the spin coater technique. The films were annealed at 600 °C in air for two hours and in Ar/H2(5%) flow for 30 and 60 min, respectively. Structural analysis, surface morphology and characterization, as well as optical analysis (photoluminescence and cathodeluminescence (CL)) were done on the samples and discussed in detail. CL degradation during prolonged electron irradiation on the films was also determined. A preferential orientation of the c-axis perpendicular to the surface was observed from X-ray diffraction data showing the peak from the (002) plane for the films annealed in both the air and in the H2 flow. The film annealed in air exhibited a broad visible emission as well as a strong ultraviolet emission. A single-green emission peak around 511 nm was obtained from the film that was annealed in Ar/H2 flow for 60 min. The CL study revealed that the intensity of the green emission (511 nm) was very stable during electron bombardment for electron doses of more than 160 C/cm2.

  2. Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications.

    Science.gov (United States)

    Vidor, Fábio F; Meyers, Thorsten; Hilleringmann, Ulrich

    2016-08-23

    Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs) are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high- k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the I ON / I OFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V / V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates.

  3. Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

    Directory of Open Access Journals (Sweden)

    Fábio F. Vidor

    2016-08-01

    Full Text Available Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high-k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the ION/IOFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V/V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates.

  4. Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films

    KAUST Repository

    Mughal, Asad J.

    2017-01-11

    In this work, we employ a simple two-step growth technique to deposit impurity doped heteroepitaxial thin films of (0001) ZnO onto (111) MgAl2O4 spinel substrates through a combination of atomic layer deposition (ALD) and hydrothermal growth. The hydrothermal layer is doped with Al, Ga, and In through the addition of their respective nitrate salts. We evaluated the effect that varying the concentrations of these dopants has on both the structural and optical properties of these films. It was found that the epitaxial ALD layer created a ⟨111⟩MgAl2O4∥⟨0001⟩ZnO out-of-plane orientation and a ⟨1¯1¯2⟩MgAl2O4∥∥⟨011¯0⟩ZnO in-plane orientation between the film and substrate. The rocking curve line widths ranged between 0.75° and 1.80° depending on dopant concentration. The optical bandgap determined through the Tauc method was between 3.28 eV and 3.39 eV and showed a Burstein-Moss shift with increasing dopant concentration.

  5. Bias-voltage dependent ultraviolet photodetectors prepared by GaO{sub x} + ZnO mixture phase nanocrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Rongxin, E-mail: rxwang2008@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Yang, Lechen [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Xu, Shijie [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Department of Physics and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Zhang, Xiaodong; Dong, Xue; Zhao, Yingchun; Fu, Kai; Zhang, Baoshun; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China)

    2013-07-25

    Highlights: •GaO{sub x} + ZnO thin films sputtered and annealed exhibit interesting and unique optical properties, especially deep UV photo response. •GaO{sub x} + ZnO thin films can be used to fabricate efficient deep UV photodetectors. •The mixture phase nature of GaO{sub x} + ZnO thin films is revealed to be responsible for the unique characteristics of the photodetectors. •Two bands in UV range can be adjusted by a applied voltage when the PDs were fabricated using the mixture phase nature of GaO{sub x} + ZnO thin films. -- Abstract: Ultraviolet (UV) photodetectors were prepared by using the GaO{sub x} + ZnO mixture phase thin films sputtered on sapphire as the photoresponse layer. The devices show good photoresponse in UV range. More interestingly, the device responsivity in the wavelength less than 280 nm range rapidly increases with increasing the applied voltage and becomes dominant for the bias ⩾3.0 V. X-ray diffraction, absorption and cathodoluminescence measurements firmly reveal the mixture phases in the thin films. Electric field dependent detrapping of photo-excited carriers in nanocrystals in the films shall be responsible for the observed bias-voltage dependent deep UV photoresponse of the devices.

  6. Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dosmailov, M. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Leonat, L.N. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Patek, J. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Roth, D.; Bauer, P. [Institute of Experimental Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Scharber, M.C.; Sariciftci, N.S. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Pedarnig, J.D., E-mail: johannes.pedarnig@jku.at [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria)

    2015-09-30

    Aluminum doped ZnO (AZO) and pure ZnO thin films are grown on polymer substrates by pulsed-laser deposition and the optical, electrical, and structural film properties are investigated. Laser fluence, substrate temperature, and oxygen pressure are varied to obtain transparent, conductive, and stoichiometric AZO layers on polyethylene terephthalate (PET) that are free of cracks. At low fluence (1 J/cm{sup 2}) and low pressure (10{sup −3} mbar), AZO/PET samples of high optical transmission in the visible range, low electrical sheet resistance, and high figure of merit (FOM) are produced. AZO films on fluorinated ethylene propylene have low FOM. The AZO films on PET substrates are used as electron transport layer in inverted organic solar cell devices employing P3HT:PCBM as photovoltaic polymer-fullerene bulk heterojunction. - Highlights: • Aluminum doped and pure ZnO thin films are grown on polyethylene terephthalate. • Growth parameters laser fluence, temperature, and gas pressure are optimized. • AZO films on PET have high optical transmission and electrical conductance (FOM). • Organic solar cells on PET using AZO as electron transport layer are made. • Power conversion efficiency of these OSC devices is measured.

  7. 7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO thin film transistors

    Science.gov (United States)

    Huang, Jie; Lee, Mingun; Lucero, Antonio T.; Cheng, Lanxia; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    We demonstrate the fabrication of 7-octenytrichlorosilane (7-OTS)/trimethylaluminum (TMA) organic-inorganic hybrid films using molecular-atomic layer deposition (MALD). The properties of 7-OTS/TMA hybrid films are extensively investigated using transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), and electrical measurements. Our results suggest that uniform and smooth amorphous hybrid thin films with excellent insulating properties are obtained using the MALD process. Films have a relatively high dielectric constant of approximately 5.0 and low leakage current density. We fabricate zinc oxide (ZnO) based thin film transistors (TFTs) using 7-OTS/TMA hybrid material as a back gate dielectric with the top ZnO channel layer deposited in-situ via MALD. The ZnO TFTs exhibit a field effect mobility of approximately 0.43 cm2 V-1 s-1, a threshold voltage of approximately 1 V, and an on/off ratio of approximately 103 under low voltage operation (from -3 to 9 V). This work demonstrates an organic-inorganic hybrid gate dielectric material potentially useful in flexible electronics application.

  8. RETRACTED: Investigation of structural, optical and electronic properties in Al-Sn co-doped ZnO thin films

    Science.gov (United States)

    Pan, Zhanchang; Tian, Xinlong; Wu, Shoukun; Yu, Xia; Li, Zhuliang; Deng, Jianfeng; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

    2013-01-01

    This article has been retracted: please see Elsevier Policy on Article Withdrawal (http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Editor-in-Chief. Figures 3 and 4 of this paper have also been presented as belonging to other materials in other publications. This observation is evidence of fraud and therefore it is not certain that the described research and conclusions of this paper belong to the presented images. Figures 3 and 4 of this paper can also be found in: Effect of annealing on the structures and properties of Al and F co-doped ZnO nanostructures, Materials Science in Semiconductor Processing, 2014, 17, 162-167, http://dx.doi.org/10.1016/j.mssp.2013.09.023 Highly transparent and conductive Sn/F and Al co-doped ZnO thin films prepared by sol-gel method, Journal of Alloys and Compounds, 2014,583, 32-38, http://dx.doi.org/10.1016/j.jallcom.2013.06.192 Properties of fluorine and tin co-doped ZnO thin films deposited by sol-gel method, Journal of Alloys and Compounds, 2013,576, 31-37, http://dx.doi.org/10.1016/j.jallcom.2013.04.132

  9. Realizing luminescent downshifting in ZnO thin films by Ce doping with enhancement of photocatalytic activity

    Science.gov (United States)

    Narayanan, Nripasree; Deepak, N. K.

    2018-04-01

    ZnO thin films doped with Ce at different concentration were deposited on glass substrates by spray pyrolysis technique. XRD analysis revealed the phase purity and polycrystalline nature of the films with hexagonal wurtzite geometry and the composition analysis confirmed the incorporation of Ce in the ZnO lattice in the case of doped films. Crystalline quality and optical transmittance diminished while electrical conductivity enhanced with Ce doping. Ce doping resulted in a red-shift of optical energy gap due to the downshift of the conduction band minimum after merging with Ce related impurity bands formed below the conduction band in the forbidden gap. In the room temperature photoluminescence spectra, UV emission intensity of the doped films decreased while the intensity of the visible emission band increased drastically implying the degradation in crystallinity as well as the incorporation of defect levels capable of luminescence downshifting. Ce doping showed improvement in photocatalytic efficiency by effectively trapping the free carriers and then transferring for dye degradation. Thus Ce doped ZnO thin films are capable of acting as luminescent downshifters as well as efficient photocatalysts.

  10. Theoretical study of the multiferroic properties in M-doped (M=Co, Cr, Mg) ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bahoosh, S.G. [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Apostolov, A.T. [University of Architecture, Civil Engineering and Geodesy, Faculty of Hydrotechnics, Department of Physics, 1, Hristo Smirnenski Blvd., 1046 Sofia (Bulgaria); Apostolova, I.N. [University of Forestry, Faculty of Forest Industry, 10, Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria); Trimper, S. [Institute of Physics, Martin-Luther-University, D-06099 Halle (Germany); Wesselinowa, Julia M. [University of Sofia, Department of Physics, Blvd. J. Bouchier 5, 1164 Sofia (Bulgaria)

    2015-01-01

    The origin of multiferroism is still an open problem in ZnO. We propose a microscopic model to clarify the occurrence of multiferroism in this material. Using Green's function technique we study the influence of ion doping and size effects on the magnetization and polarization of ZnO thin films. The calculations for magnetic Co- and Cr-ions are based on the s–d model, the transverse Ising model in terms of pseudo-spins and a biquadratic magnetoelectric coupling, whereas in case of nonmagnetic Mg-ions the model takes into account the Coulomb interaction and an indirect coupling between the pseudo-spins via the conduction electrons. We show that the magnetization M exhibits a maximum for a fixed concentration of the doping ions. Furthermore M increases with decreasing film thickness N. The polarization increases with increasing concentration of the dopant and decreasing N. The results are in good agreement with the experimental data. - Highlights: • The paper analyzes the multiferroic properties of doped ZnO thin films by a microscopic model. • The magnetization exhibits a maximum at a fixed doping concentration. • The polarization increases with growing dopant concentration. • The ferroelectric transition temperature is enhanced for increasing dopant concentration.

  11. Temperature-dependent electrical characterization of nitrogen-doped ZnO thin film: vacuum annealing effect

    Energy Technology Data Exchange (ETDEWEB)

    Guer, Emre; Tuezemen, S; Dogan, S [Department of Physics, Faculty of Arts and Sciences, Atatuerk University, 25240 Erzurum (Turkey)], E-mail: emregur@atauni.edu.tr

    2009-03-15

    Temperature-dependent Hall effect measurements were carried out at an N-doped ZnO thin film grown by the reactive sputtering method onto (001) Si substrate before and after being vacuum annealed at 900 deg. 403{sup 1} C. p-Type ZnO thin film was obtained with a relatively high mobility of {approx}60 cm{sup 2} V {sup -} {sup 1} s {sup -} {sup 1}, a high carrier concentration of 2.5x10{sup 17} cm {sup -} {sup 3} and a low resistivity of 0.4 ohm cm. After vacuum annealing, the temperature dependence of electrical parameters such as mobility and carrier concentration showed highly different characteristics. Time-resolved photoluminescence (TRPL), PL and x-ray diffraction measurements (XRD) were performed after the annealing process to check whether the high-temperature annealing can remove the ZnO film on Si or not. The PL measurement shows band-to-band recombination at 360 nm and TRPL shows the exciton recombination lifetime to be 571.7 ps. The XRD measurement reveals highly preferred c-axis (0002) orientation. Activation energies were calculated using the ln {sigma} versus 1000 T {sup -} {sup 1} plot to be 20 meV for the as-grown and 24 and 6.8 meV after the vacuum annealing process.

  12. Analysis of Li-related defects in ZnO thin films influenced by ...

    Indian Academy of Sciences (India)

    et al 2008) and electrical measurements (Look and Claflin. 2004; Mohamed et al 2005). Here, we report the effects of annealing ambient on Li-related defects in ZnO films. For- mation mechanism of Li-related defects in ZnO was stud- ied by calculating formation energies of Li-related defects structure. 2. Experimental.

  13. Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

    KAUST Repository

    Phadke, Sujay

    2011-09-30

    Factors affecting charge transport through ZnO nanowire mat films were studied by aligning ZnO nanowires on substrates and coupling experimental measurements with 2D nanowire network simulations. Gallium doped ZnO nanowires were aligned on thermally oxidized silicon wafer by shearing a nanowire dispersion in ethanol. Sheet resistances of nanowire thin films that had current flowing parallel to nanowire alignment direction were compared to thin films that had current flowing perpendicular to nanowire alignment direction. Perpendicular devices showed ∼5 fold greater sheet resistance than parallel devices supporting the hypothesis that aligning nanowires would increase conductivity of ZnO nanowire electrodes. 2-D nanowire network simulations of thin films showed that the device sheet resistance was dominated by inter-wire contact resistance. For a given resistivity of ZnO nanowires, the thin film electrodes would have the lowest possible sheet resistance if the inter-wire contact resistance was one order of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using an innovative shear coating technique. Nanowire alignment has shown improvement in ZnO nanowire transparent electrode conductivity. 2D network simulations in conjunction with electrical measurements have revealed different regimes of operation of nanowire thin films and provided a guideline for improving electrical performance of nanowire electrodes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

    KAUST Repository

    Baseer Haider, M.

    2015-01-01

    Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.

  15. Effect of praseodymium incorporation on the structural and optical properties of ZnO thin films by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Vinodkumar, R.; Navas, I.; Chalana, S.R.; Mahadevan Pillai, V.P.

    2011-01-01

    In order to study the effect of praseodymium doping, thin films of ZnO and praseodymium doped ZnO (1, 3 and 5 wt %) were prepared by RF Magnetron Sputtering and the structural and optical properties are investigated by X-ray diffraction, SEM, atomic force microscopy, UV-Visible spectroscopy and photoluminescence spectroscopy. All the films posses a hexagonal Wurtzite crystal structure with preferred orientation along (002) direction. The SEM images of the doped films show a porous structure for the films. From the PL spectra all the films shows emission in the UV and visible region. The UV emission of the near band edge is due to free exciton recombination and the other is the deep-level emission in the visible region. (author)

  16. Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

    KAUST Repository

    Flemban, Tahani H.

    2016-02-08

    Gd-doped ZnO thin films were prepared using pulsed laser deposition at different oxygen pressures and varied Gd concentrations. The effects of oxygen deficiency-related defects on the Gd incorporation, optical and structural properties, were explored by studying the impact of oxygen pressure during deposition and post-growth thermal annealing in vacuum. Rutherford Backscattering Spectrometry revealed that the Gd concentration increases with increasing oxygen pressure for samples grown with the same Gd-doped ZnO target. Unexpectedly, the c-lattice parameter of the samples tends to decrease with increasing Gd concentration, suggesting that Gd-defect complexes play an important role in the structural properties. Using low-temperature photoluminescence(PL), Raman measurements and density functional theory calculations, we identified oxygen vacancies as the dominant intrinsic point defects. PL spectra show a defect band related to oxygen vacancies for samples grown at oxygen deficiency.

  17. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    Energy Technology Data Exchange (ETDEWEB)

    Hoye, Robert L. Z., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk; MacManus-Driscoll, Judith L., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Muñoz-Rojas, David [LMGP, University Grenoble-Alpes, CNRS, F-3800 Grenoble (France); Nelson, Shelby F. [Kodak Research Laboratories, Eastman Kodak Company, Rochester, New York 14650 (United States); Illiberi, Andrea; Poodt, Paul [Holst Centre/TNO Thin Film Technology, Eindhoven, 5656 AE (Netherlands); Roozeboom, Fred [Holst Centre/TNO Thin Film Technology, Eindhoven, 5656 AE (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB (Netherlands)

    2015-04-01

    Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  18. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    Directory of Open Access Journals (Sweden)

    Robert L. Z. Hoye

    2015-04-01

    Full Text Available Atmospheric pressure spatial atomic layer deposition (AP-SALD has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  19. Electrical properties of ZnO thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Pagni, O.; Somhlahlo, N.N.; Weichsel, C.; Leitch, A.W.R.

    2006-01-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies

  20. Electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

    2006-04-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

  1. Fabrication of ZnO Thin Films by Sol-Gel Spin Coating and Their UV and White-Light Emission Properties

    Science.gov (United States)

    Kumar, Mirgender; Dubey, Sarvesh; Rajendar, Vanga; Park, Si-Hyun

    2017-10-01

    ZnO thin films have been fabricated by the sol-gel spin-coating technique and annealed under different conditions, and their ultraviolet (UV) and white-light emission properties investigated. Different ambient conditions including oxygen, nitrogen, zinc-rich nitrogen, and vacuum were used to tune the main properties of the ZnO thin films. The resistivity varied from the conductive to semi-insulating regime, and the luminescence emission from fairly intense UV to polychromatic. The emission intensity was also found to be a function of the annealing conditions. Possible routes to compensate the loss of emission characteristics are discussed. X-ray photoelectron spectroscopy (XPS) analysis was carried out to detect the chemical states of the zinc/oxygen species. The changes in the electrical and emission properties are explained based on annihilation/formation of inherent donor/acceptor-type defects. Such ZnO thin films could have potential applications in solid-state lighting.

  2. Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

    DEFF Research Database (Denmark)

    Bodea, M. A.; Sbarcea, G.; Naik, G. V.

    2013-01-01

    Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass...... from dense and small-grained ceramic targets show optical transmission larger than 70 % in the visible and reveal an onset of metallic reflectivity in the near infrared at 1100 nm and a crossover to a negative real part of the permittivity at approximately 1500 nm. In comparison to noble metals, doped...

  3. Electrodeposited Mesoporous ZnO Thin Films as Efficient Photocatalysts for the degradation of dye pollutants

    Czech Academy of Sciences Publication Activity Database

    Pauporté, T.; Rathouský, Jiří

    2007-01-01

    Roč. 111, č. 21 (2007), s. 7639-7644 ISSN 1932-7447 Institutional research plan: CEZ:AV0Z40400503 Keywords : ZnO films * photocatalysis * pollutants Subject RIV: CF - Physical ; Theoretical Chemistry

  4. Study on silver doped and undoped ZnO thin films working as capacitive sensor

    Science.gov (United States)

    Kiran, S.; Kumar, N. Santhosh; Kumar, S. K. Naveen

    2013-06-01

    Nanomaterials have been found to exhibit interesting properties like good conductivity, piezoelectricity, high band gap etc. among those metal oxide family, Zinc Oxide has become a material of interest among scientific community. In this paper, we present a method of fabricating capacitive sensors, in which Silver doped ZnO and pure ZnO nanoparticles act as active layer. For the synthesis of the nanoparticle, we followed biosynthesis method and wet chemical method for Ag and Ag doped ZnO nanoparticles respectively. Characterization has been done for both the particles. The XRD pattern taken for the Ag Doped ZnO nanoparticles confirmed the average size of the particles to be 15nm. AFM image of the sample is taken by doping on Silicon wafer. Also we have presented the results of CV characteristics and IV characteristics of the capacitive sensor.

  5. Simulation, fabrication and characterization of ZnO based thin film transistors grown by radio frequency magnetron sputtering.

    Science.gov (United States)

    Singh, Shaivalini; Chakrabarti, P

    2012-03-01

    We report the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by radio frequency (RF) magnetron sputtering technique. The bottom gate type TFT, consists of a conventional thermally grown SiO2 as gate insulator onto p-type Si substrates. The X-ray diffraction patterns reveal that the ZnO films are preferentially orientated in the (002) plane, with the c-axis perpendicular to the substrate. A typical ZnO TFT fabricated by this method exhibits saturation field effect mobility of about 0.6134 cm2/V s, an on to off ratio of 102, an off current of 2.0 x 10(-7) A, and a threshold voltage of 3.1 V at room temperature. Simulation of this TFT is also carried out by using the commercial software modeling tool ATLAS from Silvaco-International. The simulated global characteristics of the device were compared and contrasted with those measured experimentally. The experimental results are in fairly good agreement with those obtained from simulation.

  6. The Effect of Tin Addition to ZnO Nanosheet Thin Films for Ethanol and Isopropyl Alcohol Sensor Applications

    Directory of Open Access Journals (Sweden)

    Brian Yuliarto

    2015-01-01

    Full Text Available The requirements of green environmental and public health monitoring have become stricter along with greater world attention for global warming. The most common pollutants in the environment that need tightened control are volatile organic compounds (VOC. Compared to other kinds of sensors, semiconductor sensors have certain advantages, including high sensitivity, fast response, simplicity, high reliability and low cost. In this work, ZnO and Sn-doped ZnO nanostructure materials with high surface nanosheet areas were synthesized using chemical bath deposition. The X-ray diffraction patterns could be indexed according to crystallinity mainly to a hexagonal wurzite ZnO structure. The scanning electron microscopy (SEM results showed that in all samples, the thin films after the addition of Sn consisted of many kinds of microstructure patterns on a nanoscale, with various sheet shapes. The sensor performance characterizations showed that VOC levels as low as 3 vol% of isopropyl alcohol (IPA and ethanol could be detected at sensitivities of 83.86% and 85.57%, respectively. The highest sensitivity of all sensors was found at an Sn doping of 1.4 at%. This high sensor sensitivity is a result of the high surface area and Sn doping, which in turn produced a higher absorption of the targeted gas.

  7. Rectifying Behavior of Aligned ZnO Nano rods on Mg0.3Zn0.7O Thin Film Template

    International Nuclear Information System (INIS)

    Salina Muhamad; Suriani Abu Bakar; Mohamad Hafiz Mamat; Rafidah Ahmad; Mohamad Rusop

    2011-01-01

    Rectifying behavior more than 3 orders of aligned zinc oxide (ZnO) nano rods grown on Mg 0.3 Zn 0.7 O thin film template using chemical bath deposition method was observed, giving a barrier height of 0.75 eV, and the ideality factor achieved was almost 6, which was analyzed using thermionic emission theory. Field emission scanning electron microscope (FESEM) images revealed that the grown ZnO was in hexagonal shape, uniformly distributed and in vertically aligned form. The crystallinity of the sample being studied using X-ray diffraction (XRD), where the highest peak was found at (002) phase, confirming that high crystallinity of ZnO was attained. The effect of metal/semiconductor junction between metal and aligned ZnO nano rods was discussed in further details. (author)

  8. Influence of Mg content on tailoring optical bandgap of Mg-doped ZnO thin film prepared by sol-gel method

    Directory of Open Access Journals (Sweden)

    M.N.H. Mia

    Full Text Available Tailoring optical bandgap of ZnO nanostructured thin films doped with different elements facilitates potential material for photonic applications. Different methods of fabrication process result in different optical and structural properties for the same amount of Mg content. Therefore, details investigation of structural and optical parameters, and their correlation need to be revealed to utilize the fabricated thin films. In this work, Mg-doped ZnO thin film of 200 nm thickness was fabricated by sol-gel spin coating method on a glass substrate for four different Mg content levels. Multiple layers were deposited by a spin coater to increase the film thickness. The prepared thin films were characterized by SEM, XRD, EDS, and UV–Vis spectroscopy. The spectroscopic analysis showed a uniform crystalline nanostructured surface with less structural defects, enhanced transmittance, and higher optical bandgap than that of pure ZnO nanostructured thin film. Change of Mg content from 2% to 8% facilitated tuning of bandgap in the range of 3.30–3.39 eV. Changing trend of structural and optical parameters with Mg content showed non-linear, non-monotonic relation. In-depth analysis of structural and optical properties provides crucial information to form a better view about bandgap dependency on structural parameters. Keywords: Mg-doped ZnO, MgZnO, Bandgap tuning, Sol-gel, Spin coating

  9. Resistive switching: An investigation of the bipolar–unipolar transition in Co-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Santos, Daniel A.A., E-mail: danielandrade.ufs@gmail.com [Department of Physics, Federal University of Sergipe, São Cristóvão 49100-000 (Brazil); Department of Physics, University at Buffalo, The State University of New York, Buffalo, NY 14260 (United States); Zeng, Hao [Department of Physics, University at Buffalo, The State University of New York, Buffalo, NY 14260 (United States); Macêdo, Marcelo A. [Department of Physics, Federal University of Sergipe, São Cristóvão 49100-000 (Brazil)

    2015-06-15

    Highlights: • A purely bipolar behavior on a Co-doped ZnO thin film has been demonstrated. • We have shown what can happen if a unipolar test is performed in a purely bipolar device. • An explanation for how a sample can show a purely bipolar switching behavior was suggested. • An important open issue about resistive switching effect was put in debate. - Abstract: In order to investigate the resistive switching effect we built devices in a planar structure in which two Al contacts were deposited on the top of the film and separated by a small gap using a shadow mask. Therefore, two samples of 10% Co-doped ZnO thin films were sputtered on glass substrate. High resolution X-ray diffraction (HRXRD) revealed a highly c-axis oriented crystalline structure, without secondary phase. The high resolution scanning electron microscopy (HRSEM) showed a flat surface with good coverage and thickness about 300 nm. A Keithley 2425 semiconductor characterization system was used to perform the resistive switching tests in the bipolar and unipolar modes. Considering only the effect of compliance current (CC), the devices showed a purely bipolar behavior since an increase in CC did not induce a transition to unipolar behavior.

  10. Area-Selective ZnO Thin Film Deposition on Variable Microgap Electrodes and Their Impact on UV Sensing

    Directory of Open Access Journals (Sweden)

    Q. Humayun

    2013-01-01

    Full Text Available ZnO thin films were deposited on patterned gold electrodes using the sol-gel spin coating technique. Conventional photolithography process was used to obtain the variable microgaps of 30 and 43 μm in butterfly topology by using zero-gap chrome mask. The structural, morphological, and electrical properties of the deposited thin films were characterized by X-ray diffraction (XRD, scanning electron microscope (SEM, and Keithley SourceMeter, respectively. The current-voltage (I-V characterization was performed to investigate the effect of UV light on the fabricated devices. The ZnO fabricated sensors showed a photo to dark current (Iph/Id ratios of 6.26 for 30 μm and 5.28 for 43 μm gap electrodes spacing, respectively. Dynamic responses of both fabricated sensors were observed till 1V with good reproducibility. At the applied voltage of 1 V, the response time was observed to be 4.817 s and 3.704 s while the recovery time was observed to be 0.3738 s and 0.2891 s for 30 and 43 μm gaps, respectively. The signal detection at low operating voltages suggested that the fabricated sensors could be used for miniaturized devices with low power consumption.

  11. Photoluminescence and electrochemical properties of transparent CeO2-ZnO nanocomposite thin films prepared by Pechini method

    Science.gov (United States)

    Sani, Z. Khosousi; Ghodsi, F. E.; Mazloom, J.

    2017-02-01

    Nanocomposite thin films of CeO2-ZnO with different molar ratios of Zn/Ce (=0, 0.25, 0.5, 0.75 and 1) were prepared by the Pechini sol-gel route. Various spectroscopic and electrochemical techniques were applied to investigate the films. XRD patterns of all the samples exhibited the peaks corresponding to cubic fluorite structure of ceria and the (101) and (103) peaks of ZnO with hexagonal structure was just observed in the sample with molar ratio of 1. EDS confirmed the presence of constituent of element in the samples. FESEM images of the films showed a surface composed of nanograins. AFM analysis revealed that root mean square roughness was enhanced as molar ratio of Zn/Ce increased. Moreover, fractal dimension of surfaces were calculated by cube counting approach. Optical measurements indicated that the film with molar ratio of 1 has the highest transmission and lowest reflectivity. The optical band gap values varied between 2.95 and 3.42 eV. The compositional dependence of refractive index and extinction coefficient were reported. The UV and blue emission appeared in PL spectra. The highest photoluminescence emission intensity was observed in the 1:1 molar ratio sample. The cyclic voltammetry measurements indicated the highest charge density (9.75 mC cm-2) and diffusion coefficient (3.507 × 10-17 cm2 s-1) belonged to the Ce/Zn (1:1) thin film.

  12. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Pitkänen, Marja; Salo, Erkki; Kenttä, Eija [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Tanskanen, Anne, E-mail: Anne.Tanskanen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Sajavaara, Timo, E-mail: timo.sajavaara@jyu.fi [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Karppinen, Maarit, E-mail: Maarit.Karppinen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland)

    2014-07-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al{sub 2}O{sub 3} of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al{sub 2}O{sub 3} thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al{sub 2}O{sub 3} • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli.

  13. Effect of thermal annealing on properties of polycrystalline ZnO thin films

    Science.gov (United States)

    Gritsenko, L. V.; Abdullin, Kh. A.; Gabdullin, M. T.; Kalkozova, Zh. K.; Kumekov, S. E.; Mukash, Zh. O.; Sazonov, A. Yu.; Terukov, E. I.

    2017-01-01

    Electrical properties (density, carriers mobility, resistivity), optical absorption and photoluminescence spectra of ZnO, grown by MOCVD and hydrothermal methods, have been investigated depending on the annealing and treatment modes in a hydrogen plasma. It has been shown that the electrical and photoluminescent (PL) properties of ZnO are strongly dependent on gas atmosphere during annealing. The annealing in oxygen atmosphere causes a sharp drop of carrier mobility and films conductivity due to the absorption of oxygen on grain boundaries. The process of ZnO electrical properties recovery by the thermal annealing in inert atmosphere (nitrogen), in oil (2×10-2 mbar) and oil-free (1×10-5 mbar) vacuum has been investigated. The hydrogen plasma treatment influence on the intensity of near-band-gap emission (NBE) has been studied. The effect of annealing and subsequent plasma treatment on PL intensity depends on the gas atmosphere of preliminary thermal annealing.

  14. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

    KAUST Repository

    Alshammari, Fwzah Hamud

    2016-08-24

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

  15. Density functional theory study of Al-doped hematite

    International Nuclear Information System (INIS)

    Rivera, Richard; Stashans, Arvids; Piedra, Lorena; Pinto, Henry P

    2012-01-01

    Using first-principles density functional theory calculations within the generalized gradient approximation (GGA) as well as the GGA+U approach, we study Al-doped α-Fe 2 O 3 crystals. Structural, electronic, magnetic and optical properties due to impurity incorporation have been investigated and discussed in detail. Atomic displacements and Bader charges on atoms have been computed, showing that Al dopant converts the chemical bonding in its neighbourhood into a more ionic one. This work enhances our knowledge about how a crystalline lattice reacts in the presence of an Al impurity. It was found that Al incorporation produces some local changes in the band structure of the material without the creation of local energy levels within the band gap. The results provide evidence for changes in the magnetic moments in the vicinity of a defect, which means that α-Fe 2 O 3 doped with aluminum might not act as an antiferromagnetic substance.

  16. Structural, Optical Constants and Photoluminescence of ZnO Thin Films Grown by Sol-Gel Spin Coating

    Directory of Open Access Journals (Sweden)

    Abdel-Sattar Gadallah

    2013-01-01

    Full Text Available We report manufacturing and characterization of low cost ZnO thin films grown on glass substrates by sol-gel spin coating method. For structural properties, X-ray diffraction measurements have been utilized for evaluating the dominant orientation of the thin films. For optical properties, reflectance and transmittance spectrophotometric measurements have been done in the spectral range from 350 nm to 2000 nm. The transmittance of the prepared thin films is 92.4% and 88.4%. Determination of the optical constants such as refractive index, absorption coefficient, and dielectric constant in this wavelength range has been evaluated. Further, normal dispersion of the refractive index has been analyzed in terms of single oscillator model of free carrier absorption to estimate the dispersion and oscillation energy. The lattice dielectric constant and the ratio of free carrier concentration to free carrier effective mass have been determined. Moreover, photoluminescence measurements of the thin films in the spectral range from 350 nm to 900 nm have been presented. Electrical measurements for resistivity evaluation of the films have been done. An analysis in terms of order-disorder of the material has been presented to provide more consistency in the results.

  17. Influence of annealing temperature on ZnO thin films grown by dual ...

    Indian Academy of Sciences (India)

    In electrical characterization as well, when annealing temperature was increased from 400 to 600 °C, room temperature electron mobility enhanced from 6.534 to 13.326 cm2/V s, and then reduced with subsequent increase in temperature. Therefore, 600 °C annealing temperature produced good-quality ZnO film, suitable ...

  18. Preparation of cadmium-doped ZnO thin films by SILAR and their ...

    Indian Academy of Sciences (India)

    Particle size evaluated using X-ray line broadening analysis shows decreasing trend with increasing cadmium impurification. The average particle size for pure ZnO is 36.73nm and it reduces to 29.9 nm for 10% Cd:ZnO, neglecting strain broadening. The strong preferred c-axis orientation is lost due to cadmium doping and ...

  19. Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films

    Czech Academy of Sciences Publication Activity Database

    Bouderbala, M.; Hamzaoui, S.; Amrani, B.; Reshak, Ali H; Adnane, M.; Sahraoui, T.; Zerdali, M.

    2008-01-01

    Roč. 403, č. 18 (2008), s. 3326-3330 ISSN 0921-4526 Institutional research plan: CEZ:AV0Z60870520 Keywords : thickness effect * structural and optical properties * hall effect * ZnO Subject RIV: BO - Biophysics Impact factor: 0.822, year: 2008

  20. Influence of annealing temperature on ZnO thin films grown by dual ...

    Indian Academy of Sciences (India)

    Administrator

    ties were measured using four-probe Hall measurement set-up in Van der Pauw geometry with a magnetic field of. 0⋅50 Tesla. 3. Results and discussion. 3.1 Structural properties. Figure 1(a) demonstrated the variation of XRD spectra from ZnO films for different annealing temperatures. It should be mentioned at this point ...

  1. A method for electrochemical growth of homogeneous nanocrystalline ZnO thin films at room temperature

    Czech Academy of Sciences Publication Activity Database

    Pauporté, T.; Jirka, Ivan

    2009-01-01

    Roč. 54, č. 28 (2009), s. 7558-7564 ISSN 0013-4686 R&D Projects: GA AV ČR IAA400400909 Institutional research plan: CEZ:AV0Z40400503 Keywords : electrodeposition * ZnO * room temperature * photoluminiscence Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.325, year: 2009

  2. OPTICAL PROPERTIES OF Al:ZnO THIN FILM DEPOSITED BY DIFFERENT SOL-GEL TECHNIQUES: ULTRASONIC SPRAY PYROLYSIS AND DIP-COATING

    Directory of Open Access Journals (Sweden)

    Ebru Gungor

    2016-08-01

    Full Text Available Undoped and Al-doped ZnO polycrystalline thin films have been fabricated on glass substrates by using a computer-controlled dip coating (DC and ultrasonic spray pyrolysis (USP systems. The film deposition parameters of DC process were optimized for the samples. In this technique, the substrate was exposed to temperature gradient using a tube furnace. In the study, the other solvent-based technique was conventional USP. The zinc salt and Al salt concentrations in the solution were kept constant as 0.1 M and 2% of Zn salt’s molarity, respectively. The optical properties were compared for the films deposited two different techniques. The optical transmission of Al:ZnO/Glass/Al:ZnO sample dip coated and  the optical transmission of Al:ZnO/Glass sample ultrasonically sprayed were determined higher than 80% in the visible and near infrared region. Experimental optical transmittance spectra of the films in the forms of FilmA/Glass/FilmA and FilmA/glass were used to determine the optical constants. It was observed that the optical band gaps of Al doped ZnO films onto glass substrate were increases with increase of Al content and the absorption edge shifted to the shorter wavelength (blue shift compared with the undoped ZnO thin film.

  3. Determination of electrical types in the P-doped ZnO thin films by the control of ambient gas flow

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young Yi; Han, Won Suk [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Cho, Hyung Koun, E-mail: chohk@skku.edu [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

    2010-05-01

    Phosphorus (P)-doped ZnO thin films with amphoteric doping behavior were grown on c-sapphire substrates by radio frequency magnetron sputtering with various argon/oxygen gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio without post-annealing. The P-doped ZnO films grown at a argon/oxygen ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of 1.5 x 10{sup 17} cm{sup -3} and 2.5 cm{sup 2}/V s, respectively. X-ray diffraction showed that the ZnO (0 0 0 2) peak shifted to lower angle due to the positioning of P{sup 3-} ions with a larger ionic radius in the O{sup 2-} sites. This indicates that a p-type mechanism was due to the substitutional P{sub O}. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction light emitting diode showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

  4. A study of Eu incorporated ZnO thin films: An application of Al/ZnO:Eu/p-Si heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Turgut, G. [Department of Basic Sciences, Faculty of Science, Erzurum Technical University, Erzurum, 25240 (Turkey); Duman, S., E-mail: sduman@atauni.edu.tr [Department of Physics, Faculty of Science, Ataturk University, Erzurum, 25240 (Turkey); Sonmez, E. [Department of Physics, Faculty of K.K. Education, Ataturk University, Erzurum, 25240 (Turkey); Ozcelik, F.S. [Department of Physics, Faculty of Science, Ataturk University, Erzurum, 25240 (Turkey)

    2016-04-15

    Highlights: • Eu incorporated ZnO thin films were grown by sol–gel spin coating. • The influence of Eu contribution on features of ZnO was investigated. • Al/ZnO:Eu/p-Si heterojunction diodes were also fabricated. • The diode parameters were calculated from I–V measurements. - Abstract: In present work, the pure and europium (Eu) incorporated zinc oxide (ZnO) thin films were deposited with sol-gel spin coating by using zinc acetate dehydrate and Eu (III) chloride salts. The coated films were examined by means of XRD, AFM and UV/VIS spectrophotometer. The ZnO hexagonal wurtzite nanoparticles with (002) preferential direction were observed for all films. The values of crystallite size, micro-strain and surface roughness continuously increased from 21 nm, 1.10 × 10{sup −3} and 2.43 nm to the values of 35.56 nm, 1.98 × 10{sup −3} and 28.99 nm with Eu doping, respectively. The optical band gap value of the pure ZnO initially increased from 3.296 eV to 3.328 eV with Eu doping up to 2 at.% doping level, then it started to decrease with more Eu content. The electrical features of Al/n-ZnO:Eu/p-Si heterojunction diodes were inquired by current-voltage (I–V) measurements at the room temperature.

  5. Structural and magnetic properties of Co-doped ZnO thin films grown by ultrasonic spray pyrolysis method

    Science.gov (United States)

    Baghdad, R.; Lemée, N.; Lamura, G.; Zeinert, A.; Hadj-Zoubir, N.; Bousmaha, M.; Bezzerrouk, M. A.; Bouyanfif, H.; Allouche, B.; Zellama, K.

    2017-04-01

    Cobalt-doped ZnO thin films with several different percentage of Co from 0 up to 15 at% were synthesized via a cheap, simple and versatile method i.e. ultrasonic spray pyrolysis at atmospheric pressure and a substrate temperature of 350 °C. The structure of the as-prepared samples was characterized by X-ray diffraction (XRD), Raman spectroscopy and FTIR. The Co-doping effect is revealed by the presence of three additional peaks around 235, 470 and 538 cm-1 respect to the Raman spectra of the unsubstituted film. Fourier transform infrared spectroscopy (FTIR) put in evidence the decrease of the bond force constant f with increasing Co-doping. By ultra-violet visible near infrared (UV-Vis-NIR) spectroscopy on Co-doped samples it was possible to show the presence of additional absorption bands at approximately 570, 620 and 660 nm suggesting that Co2+ ions do not change their oxidation when substituted to zinc and the ZnO lattice does not change its wurtzite structure as well. Finally, all our samples exhibit a paramagnetic behavior without any trace of intrinsic room temperature ferromagnetism.

  6. Development of Room Temperature Excitonic Lasing From ZnO and MgZnO Thin Film Based Metal-Semiconductor-Metal Devices

    Science.gov (United States)

    Suja, Mohammad Zahir Uddin

    Room temperature excitonic lasing is demonstrated and developed by utilizing metal-semiconductor-metal devices based on ZnO and MgZnO materials. At first, Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films and the best conductivity is achieved with a high hole concentration of 1.54x1018 cm-3, a low resistivity of 0.6 O cm and a moderate mobility of 6.65 cm2 V -1 s-1 at room temperature. Metal oxide semiconductor (MOS) capacitor devices have been fabricated on the Cu-doped ZnO films and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as XRD, XPS, Raman and absorption are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO. To overcome the stability issue of p-type ZnO film, alternate devices other than p-n junction has been developed. Electrically driven plasmon-exciton coupled random lasing is demonstrated by incorporating Ag nanoparticles on Cu-doped ZnO metal-semiconductor-metal (MSM) devices. Both photoluminescence and electroluminescence studies show that emission efficiencies have been enhanced significantly due to coupling between ZnO excitons and Ag surface plasmons. With the incorporation of Ag nanoparticles on ZnO MSM structures, internal quantum

  7. Structural Properties of Zinc Oxide Nanorods Grown on Al-Doped Zinc Oxide Seed Layer and Their Applications in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Kyung Ho Kim

    2014-03-01

    Full Text Available We fabricated zinc oxide (ZnO nanorods (NRs with Al-doped ZnO (AZO seed layers and dye-sensitized solar cells (DSSCs employed the ZnO NRs between a TiO2 photoelectrode and a fluorine-doped SnO2 (FTO electrode. The growth rate of the NRs was strongly dependent on the seed layer conditions, i.e., thickness, Al dopant and annealing temperature. Attaining a large particle size with a high crystallinity of the seed layer was vital to the well-aligned growth of the NRs. However, the growth was less related to the substrate material (glass and FTO coated glass. With optimized ZnO NRs, the DSSCs exhibited remarkably enhanced photovoltaic performance, because of the increase of dye absorption and fast carrier transfer, which, in turn, led to improved efficiency. The cell with the ZnO NRs grown on an AZO seed layer annealed at 350 °C showed a short-circuit current density (JSC of 12.56 mA/cm2, an open-circuit voltage (VOC of 0.70 V, a fill factor (FF of 0.59 and a power conversion efficiency (PCE, η of 5.20% under air mass 1.5 global (AM 1.5G illumination of 100 mW/cm2.

  8. A comparison of different spray chemical vapour deposition methods for the production of undoped ZnO thin films

    International Nuclear Information System (INIS)

    Garnier, Jerome; Bouteville, Anne; Hamilton, Jeff; Pemble, Martyn E.; Povey, Ian M.

    2009-01-01

    Two different methods of spray chemical vapour deposition have been used to grow ZnO thin films on glass substrates from zinc acetate solution over the temperature range 400 o C to 550 o C. The first of these is named InfraRed Assisted Spray Chemical Vapour Deposition (IRAS-CVD). This method uses intense IR radiation to heat not only the substrate but also the gaseous species entering the reactor. The second method is a more conventional approach known simply as ultrasonic spray CVD, which utilises IR lamps to heat the substrate only. By way of comparing these two approaches we present data obtained from contact angle measurements, crystallinity and mean crystallite size, photoluminescence, electrical and optical properties. Additionally we have examined the role of annealing within the IRAS-CVD reactor environment.

  9. Effect of deposition conditions on the growth rate and electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Roro, K.T.; Botha, J.R.; Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2008-07-01

    ZnO thin films have been grown on glass substrates by MOCVD. The effect of deposition conditions such as VI/II molar ratio, DEZn flow rate and total reactor pressure on the growth rate and electrical properties of the films was studied. It is found that the growth rate decreases with an increase in the VI/II molar ratio. This behaviour is ascribed to the competitive adsorption of reactant species on the growth surface. The growth rate increases with an increase in DEZn flow rate, as expected. It is shown that the carrier concentration is independent of the DEZn flow rate. An increase in the total reactor pressure yields a decrease in growth rate. This phenomenon is attributed to the depletion of the gas phase due to parasitic prereactions between zinc and oxygen species at high pressure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Optical and structural properties of ZnO thin films; effects of high energy electron irradiation and annealing

    International Nuclear Information System (INIS)

    Guer, Emre; Asil, Hatice; Coskun, C.; Tuezemen, S.; Meral, Kadem; Onganer, Y.; Serifoglu, Korkmaz

    2008-01-01

    High energy electron irradiation (HEEI) effects on the as-grown and annealed ZnO thin films grown by electrochemical deposition were investigated. Both samples were exposed to the sequential electron irradiations of 6, 12 and 15 MeV energies at a fluence of 1 x 10 12 e - /cm 2 . The results of X-ray diffraction suggest that a highly strong crystallographic structure can be produced by annealing process. Photoluminescence (PL) studies show that the EI produces violet emission which results from the zinc interstitial. Recombination lifetime (RL) values of the both films reveal that the high quality crystals are obtained. The decreasing trends of RL values with increasing electron energy have been explained by the formation of crystal defects due to the HEEI

  11. Optical and structural properties of ZnO thin films; effects of high energy electron irradiation and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Guer, Emre; Asil, Hatice [Atatuerk University, Art and Science Faculty, Physics Department, 25240 Erzurum (Turkey); Coskun, C. [Atatuerk University, Art and Science Faculty, Physics Department, 25240 Erzurum (Turkey)], E-mail: ccoskun@atauni.edu.tr; Tuezemen, S. [Atatuerk University, Art and Science Faculty, Physics Department, 25240 Erzurum (Turkey); Meral, Kadem; Onganer, Y. [Atatuerk University, Art and Science Faculty, Chemistry Department, 25240 Erzurum (Turkey); Serifoglu, Korkmaz [Atatuerk University, Faculty of Medicine, Radiation Oncology Department, 25240 Erzurum (Turkey)

    2008-05-15

    High energy electron irradiation (HEEI) effects on the as-grown and annealed ZnO thin films grown by electrochemical deposition were investigated. Both samples were exposed to the sequential electron irradiations of 6, 12 and 15 MeV energies at a fluence of 1 x 10{sup 12} e{sup -}/cm{sup 2}. The results of X-ray diffraction suggest that a highly strong crystallographic structure can be produced by annealing process. Photoluminescence (PL) studies show that the EI produces violet emission which results from the zinc interstitial. Recombination lifetime (RL) values of the both films reveal that the high quality crystals are obtained. The decreasing trends of RL values with increasing electron energy have been explained by the formation of crystal defects due to the HEEI.

  12. ZnO thin film characterization by X-ray reflectivity optimization using genetic algorithm and Fourier transformation

    International Nuclear Information System (INIS)

    Solookinejad, Ghahraman; Rozatian, Amir Sayid Hassan; Habibi, Mohammad Hossein

    2011-01-01

    Zinc oxide (ZnO) thin film was fabricated by sol-gel spin coating method on glass substrate. X-ray reflectivity (XRR) and its optimization have been used for characterization and extracting physical parameters of the film. Genetic algorithm (GA) has been applied for this optimization process. The model independent information was needed to establish data analyzing process for X-ray reflectivity before optimization process. Independent information was exploited from Fourier transform of Fresnel reflectivity normalized X-ray reflectivity. This Fourier transformation (Auto Correlation Function) yields thickness of each coated layer on substrate. This information is a keynote for constructing optimization process. Specular X-ray reflectivity optimization yields structural parameters such as thickness, roughness of surface and interface and electron density profile of the film. Acceptable agreement exists between results obtained from Fourier transformation and X-ray reflectivity fitting.

  13. Influence of baking method and baking temperature on the optical properties of ZnO thin films

    International Nuclear Information System (INIS)

    Ng, Zi-Neng; Chan, Kah-Yoong

    2015-01-01

    In this work, sol-gel spin coating technique was utilised to coat ZnO thin films on glass substrates. During the intermediate 3 minutes baking process, either hotplate or convection oven was employed to bake the samples. The temperature for the baking process was varied from 150°C to 300°C for both instruments. Avantes Optical Spectrophotometer was used to characterise the optical property. The optical transmittances of hotplate-baked and oven-baked samples showed different trends with increasing baking temperatures, ranging from below 50% transmittance to over 90% transmittance in the visible range of wavelength. The difference in baking mechanisms using hotplate and convection oven will be discussed in this paper

  14. p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers

    Directory of Open Access Journals (Sweden)

    Daiki Itohara

    2016-01-01

    Full Text Available Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed.

  15. Photocatalytic Activity and Stability of Porous Polycrystalline ZnO Thin-Films Grown via a Two-Step Thermal Oxidation Process

    Directory of Open Access Journals (Sweden)

    James C. Moore

    2014-08-01

    Full Text Available The photocatalytic activity and stability of thin, polycrystalline ZnO films was studied. The oxidative degradation of organic compounds at the ZnO surface results from the ultraviolet (UV photo-induced creation of highly oxidizing holes and reducing electrons, which combine with surface water to form hydroxyl radicals and reactive oxygen species. Therefore, the efficiency of the electron-hole pair formation is of critical importance for self-cleaning and antimicrobial applications with these metal-oxide catalyst systems. In this study, ZnO thin films were fabricated on sapphire substrates via direct current sputter deposition of Zn-metal films followed by thermal oxidation at several annealing temperatures (300–1200 °C. Due to the ease with which they can be recovered, stabilized films are preferable to nanoparticles or colloidal suspensions for some applications. Characterization of the resulting ZnO thin films through atomic force microscopy and photoluminescence indicated that decreasing annealing temperature leads to smaller crystal grain size and increased UV excitonic emission. The photocatalytic activities were characterized by UV-visible absorption measurements of Rhodamine B dye concentrations. The films oxidized at lower annealing temperatures exhibited higher photocatalytic activity, which is attributed to the increased optical quality. Photocatalytic activity was also found to depend on film thickness, with lower activity observed for thinner films. Decreasing activity with use was found to be the result of decreasing film thickness due to surface etching.

  16. Impact of nanostructured thin ZnO film in ultraviolet protection

    OpenAIRE

    Sasani Ghamsari, Morteza; Alamdari, Sanaz; Han, Wooje; Park, Hyung-Ho

    2016-01-01

    Morteza Sasani Ghamsari,1 Sanaz Alamdari,1 Wooje Han,2 Hyung-Ho Park2 1Laser and Optics Research School, Nuclear Science and Technology Research Institute, Tehran, Iran; 2Department of Materials Science and Engineering, Yonsei University, Seoul, South Korea Abstract: Nanoscale ZnO is one of the best choices for ultraviolet (UV) protection, not only because of its antimicrobial properties but also due to its potential application for UV preservation. However, the behavior of nanostructured t...

  17. Preparation of cadmium-doped ZnO thin films by SILAR and their ...

    Indian Academy of Sciences (India)

    pH measurement was carried out in a systronics pH meter. (Model 335). Cadmium doping was carried out by adding cadmium chloride (CdCl2·H2O, GR grade, Loba Chemie, mol. wt 201·32) in sodium zincate bath. Details of pure ZnO film deposition process from sodium or ammonium zincate bath has been reported earlier.

  18. Influence of Different Annealing Conditions on Optical and Electrical Properties of Sn Doped ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    LIU Tao

    2017-08-01

    Full Text Available Sn doped ZnO thin films(SZO was prepared on glasses by sol-gel method.The influence of six kinds of annealing conditions,including air annealing,low vacuum annealing,high vacuum annealing,N2 annealing,triple high vacuum annealing,cycle annealing on the crystal structure, optical and electrical properties of the SZO film was studied.The results show that all the SZO samples show preferential orientation along the c-axis.The SZO thin films has the optimum crystal structure and electrical property on the high vacuum annealing conditions.The minimum resistivity of the film is 5.4×10-2Ω·cm.The average visible transmittance of SZO thin film is above 85%.The photoluminescence peaks at 390nm and 440nm is observed in all the samples (the excitation wavelength is set at 325nm.The intensity of the peak at 440nm is enhanced significantly on air annealing,N2 annealing and low vacuum annealing.

  19. Pristine and Al-doped hematite printed films as photoanodes of p-type dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Congiu, Mirko, E-mail: mirko.congiu@fc.unesp.br [UNESP–Univ. Estadual Paulista, POSMAT-Programa de Pós-Graduação em Ciência e Tecnologia de Materiais (Brazil); De Marco, Maria L.; Bonomo, Matteo [DC-FC-UNESP–Univ. Estadual Paulista (Brazil); Nunes-Neto, Oswaldo [UNESP–Univ. Estadual Paulista, POSMAT-Programa de Pós-Graduação em Ciência e Tecnologia de Materiais (Brazil); Dini, Danilo [DC-FC-UNESP–Univ. Estadual Paulista (Brazil); Graeff, Carlos F.O. [UNESP–Univ. Estadual Paulista, POSMAT-Programa de Pós-Graduação em Ciência e Tecnologia de Materiais (Brazil)

    2017-01-15

    We hereby propose a non-expensive method for the deposition of pure and Al-doped hematite photoanodes in the configuration of thin films for the application of dye-sensitized solar cells (DSSC). The electrodes have been prepared from hematite nanoparticles that were obtained by thermal degradation of a chemical precursor. The particles have been used in the preparation of a paste, suitable for both screen printing and doctor blade deposition. The paste was then spread on fluorine-doped tin oxide (FTO) to obtain porous hematite electrodes. The electrodes have been sensitized using N3 and D5 dyes and were characterized through current/voltage curves under simulated sun light (1 sun, AM 1.5) with a Pt counter electrode. Al-doping of hematite showed interesting changes in the physical and electrochemical characteristics of sensitized photoanodes since we could notice the growth of AlFe{sub 2}O{sub 4} (hercynite) as a secondary crystal phase into the oxides obtained by firing the mixtures of two chemical precursors at different molar ratios. Pure and Al-doped hematite electrodes have been used in a complete n-type DSSCs. The kinetics of charge transfer through the interface dye/electrolyte was studied and compared to that of a typical p-type DSSC based on NiO photocathodes sensitized with erythrosine B. The results suggest a potential application of both Fe{sub 2}O{sub 3} and Fe{sub 2}O{sub 3}/AlFe{sub 2}O{sub 4} as photoanodes of a tandem DSSC.

  20. The electrical, elemental, optical, and surface properties of Si-doped ZnO thin films prepared by thermionic vacuum arc

    Science.gov (United States)

    Mohammadigharehbagh, Reza; Özen, Soner; Yudar, Hafizittin Hakan; Pat, Suat; Korkmaz, Şadan

    2017-09-01

    The purpose of this work is to study the properties of Si-doped ZnO (SZO) thin films, which were prepared using the non-reactive thermionic vacuum arc technique. The analysis of the elemental, optical, and surface properties of ZnO:Si thin films was carried out using energy dispersive x-ray spectroscopy, UV-VIS spectrophotometry, atomic force microscopy, and scanning electron microscopy, respectively. The current-voltage measurement was employed in order to study the electrical properties of the films. The effect of Si doping on the physical properties of ZnO films was investigated. The film thicknesses were measured as 55 and 35 nm for glass and PET substrates, respectively. It was clearly observed from the x-ray diffraction results that the Si and ZnO peaks were present in the coated SZO films for all samples. The morphological studies showed that the deposited surfaces are homogenous, dense, and have a uniform surface, with the existence of some cracks only on the glass substrate. The elemental composition has confirmed the existence of Zn, Si, and O elements within the prepared films. Using a UV-VIS spectrophotometer, the optical parameters such as transmittance, absorbance, refractive index, and reflectance were calculated. It should be noted that the transparency and refractive indices obtained from the measurements decrease with increasing Si concentration. The obtained optical bandgap values using transmittance spectra were determined to be 3.74 and 3.84 eV for the glass and PET substrates, respectively. An increase in the bandgap results demonstrates that the Si doping concentration is comparable to the pure ZnO thin films. The current versus voltage curves revealed the ohmic nature of the films. Subsequently, the development and fabrication of excellent transparent conducting electrodes enabled the appropriate use of Si-doped ZnO thin films.

  1. Effects of aluminium doping on zinc oxide transparent thin films grown by filtered vacuum arc deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gontijo, L.C., E-mail: pleooog@gmail.com [Instituto Federal do Espirito Santo, Programa de Pos-Graduacao em Engenharia Metalurgica e de Materiais, Av. Vitoria, 1729, Jucutuquara, 29040-780, Vitoria, ES (Brazil); Machado, R., E-mail: rogerio.machado.2l@gmail.com [Universidade Federal de Sergipe, Departamento de Fisica, Rod. Mal Rondon S/N, Jd Rosa Elze, CEP 49.100-000, Sao Cristovao, SE (Brazil); Nascimento, V.P., E-mail: valberpn@yahoo.com.br [Universidade Federal do Espirito Santo, Departamento de Fisica, Av. Fernando Ferrari, 514 Goiabeiras, CEP 29075-910, Vitoria, ES (Brazil)

    2012-06-25

    Highlights: Black-Right-Pointing-Pointer AZO films prepared by filtered vacuum arc deposition. Black-Right-Pointing-Pointer Systematic variation of Al concentration. Black-Right-Pointing-Pointer Structural, electrical and optical properties analyzed. Black-Right-Pointing-Pointer Optimized system for Al concentration between 4% and 6%. - Abstract: Thin n-type ZnO films doped with different atomic concentrations of aluminium were grown by filtered vacuum arc deposition (FVAD) on glass substrates. The films were deposited using an oxygen working pressure of 2.0 mTorr with an arc current running at two 100 ms pulses s{sup -1}. Structural, optical and electrical properties were investigated to understand the effect of Al doping on ZnO films. The best values were found for an ideal aluminium percentage between 4 and 6 at.%.

  2. Al-doped single-crystalline SiC nanowires synthesized by pyrolysis of polymer precursors.

    Science.gov (United States)

    Yang, Weiyou; Gao, Fengmei; Fan, Yi; An, Linan

    2010-07-01

    Al-doped 6H-SiC nanowires are synthesized by catalyst-assisted pyrolysis of polymer precursors. The obtained nanowires were characterized using scanning electron microscopy, X-ray diffraction, transmission electron microscopy and selective area electron diffraction. We demonstrate that doping concentrations can be controlled by tailoring the Al concentrations in the precursors. We also find that Al-doping has a profound effect on the morphology and emission behavior of the SiC nanowires. The current results suggest a simple technique for synthesizing Al-doped SiC nanomaterials in a controlled manner, which are promising for applications in optical and electronic nanodevices.

  3. Fabrication of undoped ZnO thin film via photosensitive sol–gel method and its applications for an electron transport layer of organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Luong, Chi Hieu [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Kim, Sarah [Central Research Division, LG Chem., Yuseong-gu, Daejeon 305-738 (Korea, Republic of); Surabhi, Srivathsava; Vo, Thanh Son; Lee, Kyung-Min; Yoon, Soon-Gil [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Jeong, Jun-Ho [Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Choi, Jun-Hyuk, E-mail: junhyuk@kimm.re.kr [Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Jeong, Jong-Ryul, E-mail: jrjeong@cnu.ac.kr [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of)

    2015-10-01

    Highlights: • Investigated the effect of the interfacial ZnO for ETL synthesized by photochemical reaction using photosensitive 2-nitrobenzaldehyde on the inverted P3HT:PCBM OSC. • The abrupt increase of grain size and surface roughness was observed as increasing the annealing temperature above 350 °C. • The sheet resistance abruptly decreased with increasing the annealing temperature above 350 °C. • Increase of surface roughness caused by the high annealing temperature could be detrimental to the OSCs characteristics due to a high contact resistance and a large leakage current. - Abstract: We have investigated ZnO thin films prepared via photochemical reaction as the electron transport layer (ETL) of inverted organic solar cells (OSCs). Morphological and electrical properties of the ZnO thin films prepared by the photosensitive ZnO sol were studied according to the annealing temperature and their effects on the performance of the inverted poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester (P3HT:PCBM) OSCs was characterized. It was found that the optimal annealing temperature of the ZnO thin films was 330 °C, and that devices with the ZnO ETL annealed at this temperature exhibited the largest short-circuit current density (J{sub sc}) of 9.39 mA/cm{sup 2}, as well as the highest power conversion efficiency (PCE) of 2.31%, which can be attributed to enhanced electron transport and interfacial properties. Devices containing ZnO films formed at optimal annealing condition exhibited an open circuit voltage (V{sub oc}) of 0.60 V and a fill factor (FF) of 41.0%. However, further increase of the annealing temperature led to degradation of the device performance, despite further improvements in electrical properties. We have found that marked increase in the surface roughness of the ZnO films occurred at temperatures above 350 °C which could be detrimental to the OSCs characteristics due to a high contact resistance and a large leakage current.

  4. UV and visible photoluminescence emission intensity of undoped and In-doped ZnO thin film and photoresponsivity of ZnO:In/Si hetero-junction

    International Nuclear Information System (INIS)

    Zebbar, N.; Chabane, L.; Gabouze, N.; Kechouane, M.; Trari, M.; Aida, M.S.; Belhousse, S.; Hadj Larbi, F.

    2016-01-01

    Undoped zinc oxide (ZnO) and indium-doped (ZnO:In) thin films were grown at different temperatures (250–400 °C) on alkali-free borosilicate glass and n-Si (100) substrates by Ultrasonic Spray Pyrolysis method. The structural, compositional, optical and electrical properties of ZnO films were investigated by X-ray diffraction, Scanning Electron Microscopy, Rutherford Back Scattering Spectroscopy, Fourier Transform Infrared spectroscopy, photoluminescence (PL) and the four-point probe technique. The predominance of ultraviolet (UV) and blue emission intensities was found to be closely dependent on the resistivity of the film. The visible emission band (peaking at 432 nm) prevails for low film resistivity, ranging from 10 −2 to 1 Ω·cm. By contrast, for higher resistivity (> 1 Ω·cm), there is a predominance of the UV band (382 nm). The PL and photoresponsivity results of fabricated ZnO:In/n-Si(100) heterojunctions prepared at different temperatures are discussed. The maximum spectral response of the ZnO:8%In/Si heterojunction diode fabricated at 250 °C was about 80 mA/W at zero bias. The highlighted results are attractive for the optoelectronic applications. - Highlights: • Properties of ZnO thin films grown by Ultrasonic Spray Pyrolysis at 350 °C. • Photoluminescence emission intensity in undoped ZnO film: effect of the resistivity • Photoluminescence emission intensity of In-doped ZnO film is resistivity dependent. • The spectral response of ZnO:In/Si hetero-junction deposited in the range (250–400 °C)

  5. UV and visible photoluminescence emission intensity of undoped and In-doped ZnO thin film and photoresponsivity of ZnO:In/Si hetero-junction

    Energy Technology Data Exchange (ETDEWEB)

    Zebbar, N., E-mail: nacbar2003@yahoo.fr [LCMS, Faculty of Physics, University of Sciences and Technology (USTHB), BP 32, El-Alia, Algiers (Algeria); Chabane, L. [LCMS, Faculty of Physics, University of Sciences and Technology (USTHB), BP 32, El-Alia, Algiers (Algeria); Gabouze, N. [CRTSE, 02 Bd. Frantz Fanon, BP 140, Algiers (Algeria); Kechouane, M. [LCMS, Faculty of Physics, University of Sciences and Technology (USTHB), BP 32, El-Alia, Algiers (Algeria); Trari, M. [Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry (USTHB), BP 32, El-Alia, Algiers (Algeria); Aida, M.S. [LCM et Interface, Faculty of Sciences, University of Constantine, 25000 (Algeria); Belhousse, S. [CRTSE, 02 Bd. Frantz Fanon, BP 140, Algiers (Algeria); Hadj Larbi, F. [MEMS & Sensors, Division Microélectronique et Nanotechnologie, Centre de Développement des Technologies Avancées (CDTA), BP 17, Baba Hassen, Algiers (Algeria)

    2016-04-30

    Undoped zinc oxide (ZnO) and indium-doped (ZnO:In) thin films were grown at different temperatures (250–400 °C) on alkali-free borosilicate glass and n-Si (100) substrates by Ultrasonic Spray Pyrolysis method. The structural, compositional, optical and electrical properties of ZnO films were investigated by X-ray diffraction, Scanning Electron Microscopy, Rutherford Back Scattering Spectroscopy, Fourier Transform Infrared spectroscopy, photoluminescence (PL) and the four-point probe technique. The predominance of ultraviolet (UV) and blue emission intensities was found to be closely dependent on the resistivity of the film. The visible emission band (peaking at 432 nm) prevails for low film resistivity, ranging from 10{sup −2} to 1 Ω·cm. By contrast, for higher resistivity (> 1 Ω·cm), there is a predominance of the UV band (382 nm). The PL and photoresponsivity results of fabricated ZnO:In/n-Si(100) heterojunctions prepared at different temperatures are discussed. The maximum spectral response of the ZnO:8%In/Si heterojunction diode fabricated at 250 °C was about 80 mA/W at zero bias. The highlighted results are attractive for the optoelectronic applications. - Highlights: • Properties of ZnO thin films grown by Ultrasonic Spray Pyrolysis at 350 °C. • Photoluminescence emission intensity in undoped ZnO film: effect of the resistivity • Photoluminescence emission intensity of In-doped ZnO film is resistivity dependent. • The spectral response of ZnO:In/Si hetero-junction deposited in the range (250–400 °C)

  6. The role of Al, Ba, and Cd dopant elements in tailoring the properties of c-axis oriented ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Dilawar [Department of Physics GC University, Lahore 54000 (Pakistan); Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Butt, M.Z., E-mail: mzakriabutt@gmail.com [Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Arif, Bilal [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia); Yakuphanoglu, Fahrettin [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia)

    2017-02-01

    Highly c-axis oriented un-doped ZnO and Al-, Ba-, and Cd-doped ZnO thin films were successfully deposited on glass substrate employing sol-gel spin coating method. XRD analysis showed that all thin films possess hexagonal wurtzite structure with preferred orientation along c-axis. Field emission scanning electron microscope (FESEM) was used to study the morphology of thin films. The morphology consists of spherical and non-spherical shape grains. EDX analysis confirms the presence of O, Zn, Al, Ba, and Cd in the relevant thin films. The optical properties of thin films were studied using UV–Vis spectrometer. All thin films possess more than 85% optical transmittance in the visible region. Blue shift in optical band gap E{sub g} has been observed on doping with Al, whereas doping with Ba and Cd resulted in red shift of E{sub g}. Urbach energy E{sub u} of all doped ZnO thin films was found to have excellent correlation with their band gap energy E{sub g}. Moreover, E{sub g} increases while E{sub u} decreases on the increase in crystallite size D. Optical parameters E{sub g} and E{sub u} as well as structural parameters lattice strain and stacking fault probability also show excellent correlation with the B-factor or the mean-square amplitude of atomic vibrations of the dopant elements. Electrical conductivity measurement of the thin films was carried out using two-point probe method. The electrical conductivity was found to increase with the increase in crystallite orientation along c-axis.

  7. Dopant-driven enhancements in the optoelectronic properties of laser ablated ZnO: Ga thin films

    Science.gov (United States)

    Hassan, Ali; Jin, Yuhua; Chao, Feng; Irfan, Muhammad; Jiang, Yijian

    2018-04-01

    Theoretically and experimentally evaluated optoelectronic properties of GZO (Ga-doped zinc oxide) were correlated in the present article. Density functional theory and Hubbard U (DFT + Ud + Up) first-principle calculations were used for the theoretical study. The pulsed laser deposition technique was used to fabricate GZO thin films on p-GaN, Al2O3, and p-Si substrates. X-ray diffraction graphs show single crystal growth of GZO thin films with (002) preferred crystallographic orientation. The chemical composition was studied via energy dispersive X-ray spectroscopy, and no other unwanted impurity-related peaks were found, which indicated the impurity-free thin film growth of GZO. Field emission scanning electron microscopic micrographs revealed noodle-, seed-, and granular-like structures of GZO/GaN, GZO/Al2O3, and GZO/Si, respectively. Uniform growth of GZO/GaN was found due to fewer mismatches between ZnO and GaN (0.09%). Hall effect measurements in the van der Pauw configuration were used to check electrical properties. The highest mobility (53 cm2/Vs) with a high carrier concentration was found with low laser shots (1800). A 5-fold photoluminescence enhancement in the noodle-like structure of GZO/GaN compared with GZO/Al2O3 and GZO/Si was detected. This points toward shape-driven optical properties because the noodle-like structure is more favorable for optical enhancements in GZO thin films. Theoretical (3.539 eV) and experimental (3.54 eV) values of the band-gap were also found to be comparable. Moreover, the lowest resistivity (3.5 × 10-4 Ωcm) with 80% transmittance is evidence that GZO is a successful alternate of ITO.

  8. Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures

    Science.gov (United States)

    Wang, S.; Mirkhani, V.; Yapabandara, K.; Cheng, R.; Hernandez, G.; Khanal, M. P.; Sultan, M. S.; Uprety, S.; Shen, L.; Zou, S.; Xu, P.; Ellis, C. D.; Sellers, J. A.; Hamilton, M. C.; Niu, G.; Sk, M. H.; Park, M.

    2018-04-01

    We report on the fabrication and electrical characterization of bottom gate thin-film transistors (TFTs) based on a sol-gel derived ZnO channel layer. The effect of annealing of ZnO active channel layers on the electrical characteristics of the ZnO TFTs was systematically investigated. Photoluminescence (PL) spectra indicate that the crystal quality of the ZnO improves with increasing annealing temperature. Both the device turn-on voltage (Von) and threshold voltage (VT) shift to a positive voltage with increasing annealing temperature. As the annealing temperature is increased, both the subthreshold slope and the interfacial defect density (Dit) decrease. The field effect mobility (μFET) increases with annealing temperature, peaking at 800 °C and decreases upon further temperature increase. An improvement in transfer and output characteristics was observed with increasing annealing temperature. However, when the annealing temperature reaches 900 °C, the TFTs demonstrate a large degradation in both transfer and output characteristics, which is possibly produced by non-continuous coverage of the film. By using the temperature-dependent field effect measurements, the localized sub-gap density of states (DOSs) for ZnO TFTs with different annealing temperatures were determined. The DOSs for the subthreshold regime decrease with increasing annealing temperature from 600 °C to 800 °C and no substantial change was observed with further temperature increase to 900 °C.

  9. Effect of thermal annealing on the optical and electronic properties of ZnO thin films grown on p-Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Han, W.G. [Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Kang, S.G. [Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Kim, T.W. [Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)]. E-mail: twk@hanyang.ac.kr; Kim, D.W. [Semiconductor Materials Laboratory, Nano-Device Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650 (Korea, Republic of); Cho, W.J. [Semiconductor Materials Laboratory, Nano-Device Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650 (Korea, Republic of)

    2005-05-30

    The effects of annealing on the optical and the electronics properties of ZnO thin films grown on p-Si(1 0 0) substrates by using radio frequency magnetron sputtering were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements. The XRD patterns and pole figures showed that the crystallinity of the ZnO films grown on p-Si(1 0 0) substrates was improved by thermal treatment. XRD patterns, pole figures, and TEM images showed that the as-grown and the annealed ZnO films grown on Si(1 0 0) substrates had a c-axis preferential orientation in the [0 0 0 1] crystal direction. The PL spectra showed that luminescence peaks related to the free excitons and the deep levels appeared after annealing. The XPS spectra showed that the peak positions corresponding to the O 1s and the Zn 2p shifted slightly after thermal treatment. These results can help improve understanding of thermal effects on the optical and the electronic properties of ZnO thin films grown on p-Si(1 0 0) substrates.

  10. Cu-Doped ZnO Thin Films Deposited by a Sol-Gel Process Using Two Copper Precursors: Gas-Sensing Performance in a Propane Atmosphere

    Directory of Open Access Journals (Sweden)

    Heberto Gómez-Pozos

    2016-01-01

    Full Text Available A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM and secondary ion mass spectroscopy (SIMS, respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C3H8, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 104, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C3H8 gas.

  11. Synthesis of Colloidal ZnO Nanoparticles and Deposit of Thin Films by Spin Coating Technique

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2013-01-01

    Full Text Available ZnO colloidal nanoparticles were synthesized, the average size of these nanoparticles is around 25 nm with hexagonal form. It was noted that stabilization depends directly on the purifying process; in this work we do not change the nature of the solution as a difference from Meulekamp's method, and we do not use any alkanes to remove the byproducts; only a centrifuge to remove those ones was used, thereby the stabilization increases up to 24 days. It is observed from the results that only three times of washing is enough to prevent the rapid aging process. The effect of annealing process on the composition, size, and geometrical shape of ZnO nanoparticles was studied in order to know whether the annealing process affects the crystallization and growth of the nanoparticles. After the synthesis, the colloidal nanoparticles were deposited by spin coating technique showing that the formed nanoparticles have no uniformly deposition pattern. But is possible to deposit those ones in glass substrates. A possible deposition process of the nanoparticles is proposed.

  12. Chemical-bath ZnO buffer layer for CuInS{sub 2} thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ennaoui, A.; Weber, M.; Scheer, R.; Lewerenz, H.J. [Hahn-Meitner-Institut, Abt. Grenzflaechen, Bereich Physikalische Chemie, Glienicker Strasse 100, D-14109 Berlin (Germany)

    1998-07-13

    ZnO buffer layers were grown by a chemical-bath deposition (CBD) in order to improve the interface quality in p-CuInS{sub 2} based solar cells, to improve the light transmission in the blue wavelength region, but also as an alternative to eliminate the toxic cadmium. The process consists of immersion of different substrates (glass, CIS) in a dilute solution of tetraamminezinc II, [Zn(NH{sub 2}){sub 4}]{sup 2+}, complex at 60-95C. During the growth process, a homogeneous growth mechanism which proceeds by the sedimentation of a mixture of ZnO and Zn(OH){sub 2} clusters formed in solution, competes with the heterogeneous growth mechanism. The mechanism consists of specific adsorption of a complex Zn(II) followed by a chemical reaction. The last process of growth results in thin, hard, adherent and specularly reflecting films. The characterization of the deposited CBD-ZnO layers was performed by X-ray diffraction (XRD), optical transmittance, scanning electron microscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The as-deposited films on glass show hexagonal zincite structure with two preferred orientations (1 0 0) and (1 0 1). High optical transmittance up to 80% in the near-infrared and part of the visible region was observed. The low growth rate of the films on CIS suggests an atomic layer-by-layer growth process.The device parameters and performance are compared to heterojunction with a standard CdS buffer layer

  13. Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

    Science.gov (United States)

    Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

    2017-12-01

    In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

  14. Localized surface plasmon polariton resonance in holographically structured Al-doped ZnO

    Energy Technology Data Exchange (ETDEWEB)

    George, David; Lowell, David; Mao, Michelle; Hassan, Safaa; Philipose, Usha [Department of Physics and Center for Advanced Research and Technology, University of North Texas, Denton, Texas 76203 (United States); Li, Li; Jiang, Yan; Cui, Jingbiao [Department of Physics and Materials Science, University of Memphis, Memphis, Tennessee 38152 (United States); Ding, Jun; Zhang, Hualiang [Department of Electrical and Computer Engineering, University of Massachusetts Lowell, Lowell, Massachusetts 01854 (United States); Lin, Yuankun [Department of Physics and Center for Advanced Research and Technology, University of North Texas, Denton, Texas 76203 (United States); Department of Electrical Engineering, University of North Texas, Denton, Texas 76203 (United States)

    2016-07-28

    In this paper, we studied the localized surface plasmon polariton (SPP) resonance in hole arrays in transparent conducting aluminum-doped zinc oxide (AZO). CMOS-compatible fabrication process was demonstrated for the AZO devices. The localized SPP resonance was observed and confirmed by electromagnetic simulations. Using a standing wave model, the observed SPP was dominated by the standing-wave resonance along (1,1) direction in square lattices. This research lays the groundwork for a fabrication technique that can contribute to the core technology of future integrated photonics through its extension into tunable conductive materials.

  15. Influence of growth temperature on formation of continuous Ag thin film on ZnO surface by ultra-high vacuum deposition

    International Nuclear Information System (INIS)

    Zhang, T C; Mei, Z X; Guo, Y; Xue, Q K; Du, X L

    2009-01-01

    Growth of an Ag film on a ZnO (0 0 0 1) surface by ultra-high vacuum deposition has been investigated by field emission scanning electron microscopy. It is revealed that the growth temperature has a considerable effect on the formation of a continuous Ag thin film on a ZnO surface. At room temperature or above, the formation of continuous Ag films with small thickness was found to be difficult due to an upstepping mechanism, whereas a continuous Ag film as thin as 30 nm was achieved at 140 K, resulting from the reduced migration length of silver atoms and the increased saturated island density at low temperature. Coalescence between the islands occurred and predominated over upstepping during subsequent deposition, which is favourable for the formation of a continuous Ag film with a smaller thickness.

  16. Novel Al-doped carbon nanotubes with adsorption and coagulation promotion for organic pollutant removal.

    Science.gov (United States)

    Kang, Dongjuan; Yu, Xiaolin; Ge, Maofa; Xiao, Feng; Xu, Hui

    2017-04-01

    Al-doped carbon nanotubes (Al-doped CNTs) were prepared as a multifunctional integrated material of adsorbent and coagulant aid for organic pollutant removal from aqueous solution. It was observed that aluminum species were dispersed homogeneously on the surface of CNTs, and mainly anchored onto defect structures of the CNTs. The introduction of aluminium efficiently improved adsorption ability for methyl orange (MO) onto the CNTs, and maximum adsorption capacity calculated from the Langmuir isotherm model can reach 69.7mg/g. The MO adsorption kinetics can be better described by the pseudo-second-order and pore diffusion kinetic models, and the diffusion of MO anions into pores of the Al-doped CNT adsorbent should be the rate-determining step. Thermodynamic analyses indicated that the adsorption of MO onto Al-CNTs-2.0 was endothermic and spontaneous. Moreover, adsorption capacity for MO on the Al-doped CNTs was evidently dependent on the CNT dose, solution pH and adsorbent dose. From the perspective of low-cost and multifunctional, suspension obtained during the Al-doped CNT adsorbent preparation, was tested as coagulant to remove humic acid (HA). A significant observation is that the suspension exhibited an excellent coagulation performance for HA, because abundant aluminous polymer and Al-doped CNTs existed in the suspension. Copyright © 2016. Published by Elsevier B.V.

  17. Nanoscale determination of surface orientation and electrostatic properties of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zuniga-Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departament de Fisica Aplicada i Electromagnetisme, Burjassot (Spain); Palacios-Lidon, E.; Colchero, J. [Universidad de Murcia, Departamento de Fisica, Facultad de Quimica, Campus Espinardo, Murcia (Spain)

    2007-07-15

    Scanning force microscopy related techniques are applied to study surface nanoscale properties. We show that nanogoniometry can be combined with local electrostatic measurements - electrostatic force microscopy and Kelvin probe microscopy - to identify surface planes families and to study their local electrical properties. The scanning force microscopy techniques employed are analyzed and the correct way of acquiring and interpreting data is discussed in detail. The experiments performed on ZnO films grown along the nonpolar [112 anti 0] direction show that these films completely facet into {l_brace}101 anti 11{r_brace} and {l_brace}10 anti 1 anti 1{r_brace} planes, which follow a well defined pattern of surface potential along the [0001 ] direction. This pattern is explained in terms of the different ionic termination - Zn or O ions - of the exposed facets. Finally, the presence of inversion domain boundaries is discussed. (orig.)

  18. Spectroscopy and control of near-surface defects in conductive thin film ZnO

    KAUST Repository

    Kelly, Leah L

    2016-02-12

    The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

  19. Optoelectronic Characterization of Ta-Doped ZnO Thin Films by Pulsed Laser Deposition.

    Science.gov (United States)

    Koo, Horng-Show; Peng, Jo-Chi; Chen, Mi; Chin, Hung-I; Chen, Jaw-Yeh; Wu, Maw-Kuen

    2015-11-01

    Transparent conductive oxide of Ta-doped ZnO (TZO) film with doping amount of 3.0 wt% have been deposited on glass substrates (Corning Eagle XG) at substrate temperatures of 100 to 500 degrees C by the pulsed laser deposition (PLD) technique. The effect of substrate temperature on the structural, optical and electronic characteristics of Ta-doped ZnO (TZO) films with 3.0 wt% dopant of tantalum oxide (Ta2O5) was measured and demonstrated in terms of X-ray diffraction (XRD), ultraviolet-visible spectrometer (UV-Vis), four-probe and Hall-effect measurements. X-ray diffraction pattern shows that TZO films grow in hexagonal crystal structure of wurtzite phase with a preferred orientation of the crystallites along (002) direction and exhibits better physical characteristics of optical transmittance, electrical conductivity, carrier concentration and mobility for the application of window layer in the optoelectronic devices of solar cells, OLEDs and LEDs. The lowest electrical resistivity (ρ) and the highest carrier concentration of the as-deposited film deposited at 300 degrees C are measured as 2.6 x 10(-3) Ω-cm and 3.87 x 10(-20) cm(-3), respectively. The highest optical transmittance of the as-deposited film deposited at 500 degrees C is shown to be 93%, compared with another films deposited below 300 degrees C. It is found that electrical and optical properties of the as-deposited TZO film are greatly dependent on substrate temperature during laser ablation deposition.

  20. The effect of post-annealing on surface acoustic wave devices based on ZnO thin films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Phan, Duy-Thach; Chung, Gwiy-Sang

    2011-01-01

    Zinc oxide (ZnO) thin films were deposited on unheated silicon substrates via radio frequency (RF) magnetron sputtering, and the post-deposition annealing of the ZnO thin films was performed at 400 deg. C, 600 deg. C, 800 deg. C, and 1000 deg. C. The characteristics of the thin films were investigated by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films were then used to fabricate surface acoustic wave (SAW) resonators. The effects of post-annealing on the SAW devices are discussed in this work. Resulting in the 600 deg. C is determined as optimal annealing temperature for SAW devices. At 400 deg. C, the microvoids exit between the grains yield large root mean square (RMS) surface roughness and higher insertion losses in SAW devices. The highest RMS surface roughness, crack and residual stress cause a reduction of surface velocity (about 40 m/s) and increase dramatically insertion loss at 1000 deg. C. The SAW devices response becomes very weak at this temperature, the electromechanical coupling coefficient (k 2 ) of ZnO film decrease from 3.8% at 600 deg. C to 1.49% at 1000 deg. C.

  1. Effect of Al and Fe doping in ZnO on magnetic and magneto-transport properties

    International Nuclear Information System (INIS)

    Kumar, Santosh; Deepika; Tripathi, Malvika; Vaibhav, Pratyush; Kumar, Aman; Kumar, Ritesh; Choudhary, R.J.; Phase, D.M.

    2016-01-01

    The structural, magnetic and magneto-transport of undoped ZnO, Zn 0.97 Al 0.03 O, Zn 0.95 Fe 0.05 O and Zn 0.92 Al 0.03 Fe 0.05 O thin films grown on Si(100) substrate using pulsed laser deposition were investigated. The single phase nature of the films is confirmed by X-ray diffraction and Raman spectroscopy measurements. The possibility of Fe metal cluster in Fe doped/co-doped films is ruled out by Fe 2p core level photoelectron spectra. From O 1s core level spectra it is observed that oxygen vacancy is present in all the films. The undoped ZnO film shows magnetic ordering below ∼175 K, whereas Fe doped/codoped samples show magnetic ordering even at 300 K. The Al doped sample reveals paramagnetic behavior. The magneto-transport measurements suggest that the mobile carriers undergo exchange interaction with local magnetic moments. - Highlights: • Al, Fe, Al–Fe co-doped and undoped films of ZnO are deposited on Si by PLD. • Single phase (002) oriented Wurtzite ZnO phase is formed for all films. • Fe doped and Fe–Al co-doped ZnO films reveal magnetic hysteresis at 300 K. • Negative magnetoresistance is observed in undoped and Fe–Al co-doped ZnO film. • It is apparent that charge carriers are coupled with the local magnetic moment.

  2. Effect of Al and Fe doping in ZnO on magnetic and magneto-transport properties

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Santosh, E-mail: skphysics@yahoo.co.in [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Deepika [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Tripathi, Malvika [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India); Vaibhav, Pratyush [Jaypee University of Engineering and Technology, Guna 473226, Madhya Pradesh (India); Kumar, Aman [Indian Institute of Technology, Roorkee (India); Kumar, Ritesh [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Choudhary, R.J., E-mail: ram@csr.res.in [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India); Phase, D.M. [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India)

    2016-12-01

    The structural, magnetic and magneto-transport of undoped ZnO, Zn{sub 0.97}Al{sub 0.03}O, Zn{sub 0.95}Fe{sub 0.05}O and Zn{sub 0.92}Al{sub 0.03}Fe{sub 0.05}O thin films grown on Si(100) substrate using pulsed laser deposition were investigated. The single phase nature of the films is confirmed by X-ray diffraction and Raman spectroscopy measurements. The possibility of Fe metal cluster in Fe doped/co-doped films is ruled out by Fe 2p core level photoelectron spectra. From O 1s core level spectra it is observed that oxygen vacancy is present in all the films. The undoped ZnO film shows magnetic ordering below ∼175 K, whereas Fe doped/codoped samples show magnetic ordering even at 300 K. The Al doped sample reveals paramagnetic behavior. The magneto-transport measurements suggest that the mobile carriers undergo exchange interaction with local magnetic moments. - Highlights: • Al, Fe, Al–Fe co-doped and undoped films of ZnO are deposited on Si by PLD. • Single phase (002) oriented Wurtzite ZnO phase is formed for all films. • Fe doped and Fe–Al co-doped ZnO films reveal magnetic hysteresis at 300 K. • Negative magnetoresistance is observed in undoped and Fe–Al co-doped ZnO film. • It is apparent that charge carriers are coupled with the local magnetic moment.

  3. Room temperature inorganic polycondensation of oxide (Cu2O and ZnO) nanoparticles and thin films preparation by the dip-coating technique

    International Nuclear Information System (INIS)

    Salek, G.; Tenailleau, C.; Dufour, P.; Guillemet-Fritsch, S.

    2015-01-01

    Oxide thin solid films were prepared by dip-coating into colloidal dispersions of oxide nanoparticles stabilized at room temperature without the use of chelating or complex organic dispersing agents. Crystalline oxide nanoparticles were obtained by inorganic polycondensation and characterized by X-ray diffraction and field emission gun scanning electron microscopy. Water and ethanol synthesis and solution stabilization of oxide nanoparticle method was optimized to prepare two different structural and compositional materials, namely Cu 2 O and ZnO. The influence of hydrodynamic parameters over the particle shape and size is discussed. Spherical and rod shape nanoparticles were formed for Cu 2 O and ZnO, respectively. Isoelectric point values of 7.5 and 8.2 were determined for cuprous and zinc oxides, respectively, after zeta potential measurements. A shear thinning and thixotropic behavior was observed in both colloidal sols after peptization at pH ~ 6 with dilute nitric acid. Every colloidal dispersion stabilized in a low cost and environmentally friendly azeotrope solution composed of 96 vol.% of ethanol with water was used for the thin film preparation by the dip-coating technique. Optical properties of the light absorber cuprous oxide and transparent zinc oxide thin solid films were characterized by means of transmittance and reflectance measurements (300–1100 nm). - Highlights: • Room temperature inorganic polycondensation of crystalline oxides • Water and ethanol synthesis and solution stabilization of oxide nanoparticles • Low cost method for thin solid film preparation

  4. Room temperature inorganic polycondensation of oxide (Cu{sub 2}O and ZnO) nanoparticles and thin films preparation by the dip-coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Salek, G.; Tenailleau, C., E-mail: tenailleau@chimie.ups-tlse.fr; Dufour, P.; Guillemet-Fritsch, S.

    2015-08-31

    Oxide thin solid films were prepared by dip-coating into colloidal dispersions of oxide nanoparticles stabilized at room temperature without the use of chelating or complex organic dispersing agents. Crystalline oxide nanoparticles were obtained by inorganic polycondensation and characterized by X-ray diffraction and field emission gun scanning electron microscopy. Water and ethanol synthesis and solution stabilization of oxide nanoparticle method was optimized to prepare two different structural and compositional materials, namely Cu{sub 2}O and ZnO. The influence of hydrodynamic parameters over the particle shape and size is discussed. Spherical and rod shape nanoparticles were formed for Cu{sub 2}O and ZnO, respectively. Isoelectric point values of 7.5 and 8.2 were determined for cuprous and zinc oxides, respectively, after zeta potential measurements. A shear thinning and thixotropic behavior was observed in both colloidal sols after peptization at pH ~ 6 with dilute nitric acid. Every colloidal dispersion stabilized in a low cost and environmentally friendly azeotrope solution composed of 96 vol.% of ethanol with water was used for the thin film preparation by the dip-coating technique. Optical properties of the light absorber cuprous oxide and transparent zinc oxide thin solid films were characterized by means of transmittance and reflectance measurements (300–1100 nm). - Highlights: • Room temperature inorganic polycondensation of crystalline oxides • Water and ethanol synthesis and solution stabilization of oxide nanoparticles • Low cost method for thin solid film preparation.

  5. Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Roro, K T; Dangbegnon, J K; Sivaraya, S; Westraadt, J E; Neethling, J H; Leitch, A W R; Botha, J R; Kassier, G H

    2008-01-01

    The electrical properties of zinc oxide (ZnO) thin films of various thicknesses (0.3–4.4 µm) grown by metalorganic chemical vapour deposition on glass substrates have been studied by using temperature-dependent Hall-effect (TDH) measurements in the 18–300 K range. The high quality of the layers has been confirmed with x-ray diffraction, transmission electron microscopy, scanning electron microscopy and photoluminescence techniques. TDH measurements indicate the presence of a degenerate layer which significantly influences the low-temperature data. It is found that the measured mobility generally increases with increasing layer thickness, reaching a value of 120 cm 2 V −1 s −1 at room temperature for the 4.4 µm thick sample. The lateral grain size of the layers is also found to increase with thickness indicating a clear correlation between the size of the surface grains and the electrical properties of corresponding films. Theoretical fits to the Hall data suggest that the bulk conduction of the layers is dominated by a weakly compensated donor with activation energy in the 33–41 meV range and concentration of the order of 10 17 cm −3 , as well as a total acceptor concentration of mid-10 15 cm −3 . Grain boundary scattering is found to be an important limiting factor of the mobility throughout the temperature range considered

  6. Effect of sol concentration on the properties of ZnO thin films prepared by sol-gel technique

    International Nuclear Information System (INIS)

    Dutta, M.; Mridha, S.; Basak, D.

    2008-01-01

    ZnO thin films are deposited on the glass substrates by sol-gel drain coating technique by varying the concentration of the sol. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis were used to investigate the effect of sol concentration on the crystallinity and surface morphology of the films. The results show that with increase in sol concentration, the value of full width at half maximum (FWHM) of (0 0 2) peak decreases while the strain first increases and then decreases. The sol with higher concentration results in the increase in the grain size. The studies on the optical properties show that the band gap value increases from 3.27 to 3.3 eV when the sol concentration changes from 0.03 to 0.1 M. The photoconductivity studies reveal that the film for 0.05 M sol shows the maximum photoresponse for ultraviolet (UV) wavelength (<400 nm) which is co-related with the deep-level defects. The growth and decay of the photocurrent is found to be slowest for the same film

  7. Young's Modulus and Coefficient of Linear Thermal Expansion of ZnO Conductive and Transparent Ultra-Thin Films

    Directory of Open Access Journals (Sweden)

    Naoki Yamamoto

    2011-01-01

    Full Text Available A new technique for measuring Young's modulus of an ultra-thin film, with a thickness in the range of about 10 nm, was developed by combining an optical lever technique for measuring the residual stress and X-ray diffraction for measuring the strain in the film. The new technique was applied to analyze the mechanical properties of Ga-doped ZnO (GZO films, that have become the focus of significant attention as a substitute material for indium-tin-oxide transparent electrodes. Young's modulus of the as-deposited GZO films decreased with thickness; the values for 30 nm and 500 nm thick films were 205 GPa and 117 GPa, respectively. The coefficient of linear thermal expansion of the GZO films was measured using the new technique in combination with in-situ residual stress measurement during heat-cycle testing. GZO films with 30–100 nm thickness had a coefficient of linear thermal expansion in the range of 4.3 × 10−6 – 5.6 × 10−6 °C−1.

  8. Enhancement Of Free Exciton Peak Intensity In Reactively Sputtered ZnO Thin Films On (0001) Al2O3

    International Nuclear Information System (INIS)

    Tuezemen, S.; Guer, Emre; Yildirim, T.; Xiong, G.; Williams, R. T.

    2007-01-01

    Wide bandgap materials such as GaN with its direct bandgap structure have been developed rapidly for applications in short wavelength light emission. ZnO, II-VI oxide semiconductor, is also promising for various technological applications, especially for optoelectronic light emitting devices in the visible and ultraviolet (UV) range of the electromagnetic spectrum. Above-band-edge absorption spectra of reactively sputtered Zn- and O-rich samples exhibit free exciton (FX) and neutral acceptor bound exciton (A deg. X) features. It is shown that the residual acceptors which bind excitons with an energy of 75 meV reside about 312 meV above the valence band, according to effective mass theory. An intra-bandgap absorption feature peaking at 2.5 eV shows correlation with the characteristically narrow A-free exciton peak intensity. Relevant annealing processes are presented as a function of time and temperature dependently for both Zn- and O- rich thin films. Enhancement of the free exciton peak intensity is observed without disturbing the residual shallow acceptor profile which is necessary for at least background p-type conductivity

  9. Sol-gel synthesis of ZnO transparent conductive films: The role of pH

    Science.gov (United States)

    Addonizio, Maria Luisa; Aronne, Antonio; Daliento, Santolo; Tari, Orlando; Fanelli, Esther; Pernice, Pasquale

    2014-06-01

    The sol-gel synthesis of undoped and B- or Al-doped ZnO thin films were critically examined with particular reference to the influence of the pH of the reaction medium on some of their specific characteristics, such as thickness, morphology, doping level and optical properties, in view of their application in the photovoltaic field. Using triethanolamine (TEA) as chelating agent, a range of basic pH from 7.66 to 8.76 was explored starting from a very concentrated zinc acetate dehydrate (ZAD) solution in ethanol, [Zn2+] = 1.0 M, and keeping the ZAD/TEA = 1. A more basic environment gives more porous films whose thickness and crystallinity are higher than those achieved at lower pH. It was found that the morphology, as well as the sheet resistance (Rs) of films, depends on both pH and doping. Increasing the pH the Rs decreases for both undoped and doped films. At a certain pH undoped films exhibit a granular microstructure and lower Rs than B- or Al-doped films which exhibit a finer texture, characterized by a lower porosity. Optical properties strongly depend on the pH as well. Increasing the pH, a noticeable blue shift effect was observed, that was attributed mainly to structural changes and to a lesser extent to the Burnstein-Moss effect.

  10. Preparation of manganese-doped ZnO thin films and their ...

    Indian Academy of Sciences (India)

    Structural characterization by X-ray diffraction reveals that polycrystalline nature of the films increases with increasing ... SILAR; Mn:ZnO thin film; X-ray line broadening; SEM; optical bandgap. 1. Introduction. Zinc oxide is a II–IV ... potential in different applications in photo-thermal conver- sion systems, heat mirrors, ...

  11. Preparation of manganese-doped ZnO thin films and their ...

    Indian Academy of Sciences (India)

    Abstract. In this study, pure and manganese-doped zinc oxide (Mn:ZnO) thin films were deposited on quartz substrate following successive ion layer adsorption and reaction (SILAR) technique. The film growth rate was found to increase linearly with number of dipping cycle. Characterization techniques of XRD, SEM with ...

  12. Improved conductivity of ZnO thin films by exposure to an atmospheric hydrogen plasma

    NARCIS (Netherlands)

    Illiberi, A.; Kniknie, B.; Deelen, J. van; Steijvers, H.L.A.H.; Habets, D.; Simons, P.J.P.M.; Janssen, A.C.; Beckers, E.H.A.

    2012-01-01

    Aluminum-doped zinc oxide (ZnOx:Al) films have been deposited on a moving glass substrate by a high throughput metalorganic chemical vapor deposition process at atmospheric pressure. Thin (< 250 nm) ZnOx:Al films have a poor crystalline quality, due to a small grain size and the presence of

  13. Preparation of manganese-doped ZnO thin films and their ...

    Indian Academy of Sciences (India)

    In this study, pure and manganese-doped zinc oxide (Mn:ZnO) thin films were deposited on quartz substrate following successive ion layer adsorption and reaction (SILAR) technique. The film growth rate was found to increase linearly with number of dipping cycle. Characterization techniques of XRD, SEM with EDX and ...

  14. The structural and optical properties of Y (Y  =  Al, B, Si and Ti)-doped ZnO nano thin films from the first principles calculations

    Science.gov (United States)

    Zhang, Wenshu; Hu, Huijun; Zhang, Caili; Li, Jianguo; Li, Yuping; Ling, Lixia; Han, Peide

    2017-12-01

    Based on the density functional theory, the structural stability and optical properties of undoped and Y (Y  =  Al, B, Si and Ti)-doped ZnO nano thin films are investigated. The good stability of the films based on the ZnO (0 0 0 1) can be obtained when the layer is larger than 12. Moreover, the dielectric function, refractive index, absorption, and reflectivity of doped ZnO nano thin films have been analyzed in detail. In the visible light range, the values of ZnO films from 12 to 24 layers are all smaller than those of the bulk. And with the augment of the layers, the values keep increasing. All the results signify that the nano film of 12 layers possesses the lowest reflectivity and weakest absorption. In addition, there is an evident impact of some doped element on the properties of nano films. The absorption and reflectivity of Ti, Si-doped ZnO nano thin films are higher than those of the clean films, while Al, B-doped are lower, especially B-doped. Moreover, the conductivity of the doped structure is better than that of the bulk. Thus, the B-doped ZnO nano thin films could be potential candidate materials of transparent conductive films.

  15. Photoluminescence properties of ZnO thin films grown by using the hydrothermal technique

    International Nuclear Information System (INIS)

    Sahoo, Trilochan; Jang, Leewoon; Jeon, Juwon; Kim, Myoung; Kim, Jinsoo; Lee, Inhwan; Kwak, Joonseop; Lee, Jaejin

    2010-01-01

    The photoluminescence properties of zinc-oxide thin films grown by using the hydrothermal technique have been investigated. Zinc-oxide thin films with a wurtzite symmetry and c-axis orientation were grown in aqueous solution at 90 .deg. C on sapphire substrates with a p-GaN buffer layer by using the hydrothermal technique. The low-temperature photoluminescence analysis revealed a sharp bound-exciton-related luminescence peak at 3.366 eV with a very narrow peak width. The temperature-dependent variations of the emission energy and of the integrated intensity were studied. The activation energy of the bound exciton complex was calculated to be 7.35 ± 0.5 meV from the temperature dependent quenching of the integral intensities.

  16. Optical properties of the plasma hydrogenated ZnO thin films

    Czech Academy of Sciences Publication Activity Database

    Chang, Yu-Ying; Stuchlík, Jiří; Neykova, Neda; Souček, J.; Remeš, Zdeněk

    2017-01-01

    Roč. 68, č. 7 (2017), s. 70-73 ISSN 1335-3632 R&D Projects: GA ČR GC16-10429J Institutional support: RVO:68378271 Keywords : metal oxide * magnetron sputtering * thin films * reflectance interferometry * photothermal deflection spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 0.483, year: 2016

  17. Al-Sn doped ZnO thin film nanosensor for monitoring NO2 concentration

    Directory of Open Access Journals (Sweden)

    G.S. Hikku

    2017-07-01

    Full Text Available The metal oxide semiconductor gas sensor technology is robust and has quick response times. In this work, aluminium and tin co-doped zinc oxide (ASZO thin films were synthesized by a sol–gel dip-coating process as sensors for the greenhouse gas nitrogen dioxide (NO2. The prepared ASZO thin films were characterized using such techniques as X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy (AFM and photoluminescence (PL emission studies in order to analyze the elemental confirmation, particle size, surface roughness and optical emission properties, respectively. The XRD data reveals the hexagonal structure of ASZO and that the preferential orientation is along 2θ = 36.19°. SEM images of the ASZO thin film exhibit rod-like formations of ASZO on the substrate. The ASZO films show enhanced sensing behaviour, sensing NO2 gas even at 2 ppm at an operating temperature of 170 °C. The response and recovery times were determined to be 30 and 20 s, respectively.

  18. Growth of Ag thin films on ZnO(0 0 0 -1) investigated by AES and STM

    Energy Technology Data Exchange (ETDEWEB)

    Duriau, E. [Interuniversity Microelectronic Center (IMEC), SPDT-MCA, Kapeldreef 75, B-3001 Leuven (Belgium); Agouram, S. [Dpto. Fisica Aplicada y Electromagnetismo c/Dr. Moliner no. 50, 46100 Burjassot, Valencia (Spain); Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Morhain, C. [Centre de Recherche sur l' HeteroEpitaxie et ses Applications (CRHEA), CNRS, Rue Bernard Gregory, F-06560 Valbonne Sophia-Antipolis (France); Seldrum, T. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Sporken, R. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Dumont, J. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium)]. E-mail: jacques.dumont@fundp.ac.be

    2006-11-15

    The growth of Ag films on ZnO(0 0 0 -1) has been investigated by Auger electron spectroscopy (AES) and scanning tunneling microscopy (STM). A high density of islands is nucleated at the earliest stages of the growth. An upstepping mechanism causes these islands to coalesce while the uncovered fraction of the ZnO surface remains constant (30%)

  19. Correlation between electrical transport, microstructure and room temperature ferromagnetism in 200 keV Ni{sup 2+} ion implanted zinc oxide (ZnO) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, B. [Gautam Buddha University, Department of Applied Sciences, Greater Noida (India); Ghosh, S.; Srivastava, P. [Indian Institute of Technology Delhi, Nanostech Laboratory, New Delhi (India); Kumar, P.; Kanjilal, D. [Aruna Asaf Ali Marg, Inter University Accelerator Centre, New Delhi (India)

    2012-05-15

    We report variable temperature resistivity measurements and mechanisms related to electrical conduction in 200 keV Ni{sup 2+} ion implanted ZnO thin films deposited by vapor phase transport. The dc electrical resistivity versus temperature curves show that all polycrystalline ZnO films are semiconducting in nature. In the room temperature range they exhibit band conduction and conduction due to thermionic emission of electrons from grain boundaries present in the polycrystalline films. In the low temperature range, nearest neighbor hopping (NNH) and variable range hopping (VRH) conduction are observed. The detailed conduction mechanism of these films and the effects of grain boundary (GB) barriers on the electrical conduction process are discussed. An attempt is made to correlate electrical conduction behavior and previously observed room temperature ferromagnetism of these films. (orig.)

  20. Photoconductivity and surface chemical analysis of ZnO thin films deposited by solution-processing techniques for nano and microstructure fabrication

    International Nuclear Information System (INIS)

    Dwivedi, V. K.; Prakash, G. Vijaya; Srivastava, P.

    2013-01-01

    The fabrication of zinc oxide (ZnO) from inexpensive solution-processing techniques, namely, electrochemical deposition and electrospinning were explored on various conducting and mesoporous semiconducting surfaces. Optimised conditions were derived for template- and self-assisted nano/micro structures and composites. ZnO thin films were annealed at a fixed temperature under ambient conditions and characterised using physical and optical techniques. The photocurrent response in the UV region shows a fast rise and double decay behaviour with a fast component followed by a slow oscillatory decay. Photocurrent results were correlated with surface chemical analysis from X-ray photoelectron spectroscopy. Various characterisation details reveal the importance of fabrication parameter optimisation for useful low-cost optoelectronic applications. (semiconductor materials)

  1. DFT study on Al-doped defective graphene towards adsorption of elemental mercury

    Science.gov (United States)

    Liu, Zhong; Zhang, Yili; Wang, Buyun; Cheng, Hao; Cheng, Xiren; Huang, Zhengcan

    2018-01-01

    In this paper, we use the density functional theory to study the adsorption of mercury on the surface of intact, defective and doped graphene respectively. The results show that the adsorption energies of the elemental mercury on the intact and defective graphene surface are -0.220 ev and -0.342 ev, which belongs to physisorption process; while the energy on the surface of Al-doped graphene is -0.57 ev, which is a chemisorption process. Besides, the adsorption energy of Hg atom on the doped graphene surface grows as the number of Al atom grows. However, when increasing the number of Al-doped on the defective position, the adsorption of Hg will be affected. The best number of Al-doped on the single defective site is one.

  2. Optical and mechanical properties of Al-doped GaSe crystals

    Science.gov (United States)

    Chen, Shijing; Huang, Changbao; Ni, Youbao; Wu, Haixin; Wang, Zhenyou

    2018-03-01

    Doping Al atom was performed to improve the hardness of GaSe crystal. The Al-doped GaSe (Ga0.49Se0.50: Al 0.15 wt.% and Ga0.49Se0.50: Al 0.35 wt.%) were grown by the modified Bridgman method with crucible rotation technique. Compared with pure crystal, the hardness of Al-doped GaSe crystals is increased markedly (2.6 and 3.2 times). The GaSe: Al crystal hardness increases with Al concentration increase, but high Al concentration leads to the optical quality degradation (Ga0.49Se0.50: Al 0.35 wt.% possesses lower optical quality). Therefore, the selection of appropriate Al-doping level is important for the application of GaSe: Al crystals.

  3. Capacitive behavior of carbon nanotube thin film induced by deformed ZnO microspheres

    Science.gov (United States)

    Tripathi, Rahul; Naidu Majji, Shanmukh; Ghosh, Rituparna; Nandi, Sukanta; Boruah, Buddha D.; Misra, Abha

    2017-09-01

    Multiwalled carbon nanotubes (CNTs) are uniformly distributed with piezoelectric microspheres. This leads to a large strain gradient due to an induced capacitive response, providing a 250% enhancement in electromechanical response compared with pristine CNTs. The fabricated large-area flexible thin film exhibits excellent pressure sensitivity, which can even detect an arterial pulse with a much faster response time (˜79 ms) in a bendable configuration. In addition, the film shows a rapid relaxation time (˜0.4 s), high stability and excellent durability with a rapid loading-unloading cycle. The dominant contribution of piezoelectric microspheres in a CNT matrix as opposed to nanoparticles showed a much higher sensitivity due to the large change in capacitance. Therefore, hybrid microstructures have various potential applications in wearable smart electronics, including detection of human motion and wrist pulses.

  4. Influence of Codoping on the Optical Properties of ZnO Thin Films Synthesized on Glass Substrate by Chemical Bath Deposition Method

    Directory of Open Access Journals (Sweden)

    G. Shanmuganathan

    2014-01-01

    Full Text Available Fe and K simultaneously doped ZnO thin films Zn0.99 K0.01 (Fex O (x=1, 2, 3, and 4% were synthesized by chemical bath deposition method. The XRD investigation reveals that all the doped ZnO thin films are in hexagonal wurtzite crystal structure without impurity phases. With increase in Fe concentration, the growth of thin films along c axis is evident from the XRD which indicates the increase in intensity along (002 direction. The same is visible from the surface morphology which shows the formation of hexagonal structure for higher Fe concentration. The topography shows gradual variation with Fe incorporation. The optical energy band gap obtained from the transmittance spectrum decreases from 3.42 to 3.06 eV with increase in Fe concentration indicating the red shift and this trend is consistent with the earlier experimental results. The UV emission is centered around 3.59 eV. The optical constants such as refractive index, extinction coefficient, and absorption coefficient which are essential for the optoelectronic applications were also determined.

  5. Fabrication of the heterojunction diode from Y-doped ZnO thin films on p-Si substrates by sol-gel method

    Science.gov (United States)

    Sharma, Sanjeev K.; Singh, Satendra Pal; Kim, Deuk Young

    2018-02-01

    The heterojunction diode of yttrium-doped ZnO (YZO) thin films was fabricated on p-Si(100) substrates by sol-gel method. The post-annealing process was performed at 600 °C in vacuum for a short time (3 min) to prevent inter-diffusion of Zn, Y, and Si atoms. X-ray diffraction (XRD) pattern of as-grown and annealed (600 °C in vacuum) films showed the preferred orientation along the c-axis (002) regardless of dopant concentrations. The uniform surface microstructure and the absence of other metal/oxide peaks in XRD pattern confirmed the excellence of films. The increasing bandgap and carrier concentration of YZO thin films were interpreted by the BM shift, that is, the Fermi level moves towards the conduction band edge. The current-voltage characteristics of the heterojunction diode, In/n-ZnO/p-Si/Al, showed a rectification behavior. The turn-on voltage and ideality factor of n-ZnO/p-Si and n-YZO/p-Si were observed to be 3.47 V, 2.61 V, and 1.97, 1.89, respectively. Y-dopant in ZnO thin films provided more donor electrons caused the shifting of Fermi-energy level towards the conduction band and strengthen the interest for heterojunction diodes.

  6. Structural, optical and electrical properties of N-doped ZnO thin films prepared by thermal oxidation of pulsed filtered cathodic vacuum arc deposited Zn{sub x}N{sub y} films

    Energy Technology Data Exchange (ETDEWEB)

    Erdogan, N.H.; Kara, K.; Ozdamar, H. [Physics Department, Cukurova University, 01330 Adana (Turkey); Kavak, H., E-mail: hkavak@cu.edu.tr [Physics Department, Cukurova University, 01330 Adana (Turkey); Esen, R. [Physics Department, Cukurova University, 01330 Adana (Turkey); Karaagac, H. [Physics Department, Middle East Technical University, 06531 Ankara (Turkey)

    2011-09-08

    Graphical abstract: Highlights: > Thermal oxidation of Zn{sub x}N{sub y} method is used to obtain N doped ZnO. > N acceptors in ZnO is not sufficiently activated at oxidation temperature below 350 deg. C. > Oxidation treatment at 450 deg. C activates more N acceptors in ZnO. > Oxidation treatment at high temperatures above 550 deg. C reduces the N concentration in the ZnO thin film. - Abstract: In this study, N-doped ZnO thin films were fabricated by oxidation of Zn{sub x}N{sub y} films. The Zn{sub x}N{sub y} thin films were deposited on glass substrates by pulsed filtered cathodic vacuum arc deposition (PFCVAD) using metallic zinc wire (99.999%) as a cathode target in pure nitrogen plasma. The influence of oxidation temperature, on the electrical, structural and optical properties of N-doped ZnO films was investigated. P-type conduction was achieved for the N-doped ZnO obtained at 450 deg. C by oxidation of Zn{sub x}N{sub y}, with a resistivity of 16.1 {Omega} cm, hole concentration of 2.03 x 10{sup 16} cm{sup -3} and Hall mobility of 19 cm{sup 2}/V s. X-ray photoelectron spectroscopy (XPS) analysis confirmed the incorporation of N into the ZnO films. X-ray diffraction (XRD) pattern showed that the films as-deposited and oxidized at 350 deg. C were amorphous. However, the oxidized films in air atmosphere at 450-550 deg. C were polycrystalline without preferential orientation. In room temperature photoluminescence (PL) spectra, an ultraviolet (UV) peak was seen for all the samples. In addition, a broad deep level emission was observed.

  7. Area and energy efficient high-performance ZnO wavy channel thin-film transistor

    KAUST Repository

    Hanna, Amir

    2014-09-01

    Increased output current while maintaining low power consumption in thin-film transistors (TFTs) is essential for future generation large-area high-resolution displays. Here, we show wavy channel (WC) architecture in TFT that allows the expansion of the transistor width in the direction perpendicular to the substrate through integrating continuous fin features on the underlying substrate. This architecture enables expanding the TFT width without consuming any additional chip area, thus enabling increased performance while maintaining the real estate integrity. The experimental WCTFTs show a linear increase in output current as a function of number of fins per device resulting in (3.5×) increase in output current when compared with planar counterparts that consume the same chip area. The new architecture also allows tuning the threshold voltage as a function of the number of fin features included in the device, as threshold voltage linearly decreased from 6.8 V for planar device to 2.6 V for WC devices with 32 fins. This makes the new architecture more power efficient as lower operation voltages could be used for WC devices compared with planar counterparts. It was also found that field effect mobility linearly increases with the number of fins included in the device, showing almost \\\\(1.8×) enhancements in the field effect mobility than that of the planar counterparts. This can be attributed to higher electric field in the channel due to the fin architecture and threshold voltage shift. © 2014 IEEE.

  8. Observation of dopant-profile independent electron transport in sub-monolayer TiOx stacked ZnO thin films grown by atomic layer deposition

    Science.gov (United States)

    Saha, D.; Misra, P.; Das, Gangadhar; Joshi, M. P.; Kukreja, L. M.

    2016-01-01

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiOx in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiOx structures in the emerging field of transparent oxide electronics.

  9. Enhanced magnetic properties of chemical solution deposited BiFeO3 thin film with ZnO buffer layer

    International Nuclear Information System (INIS)

    Rajalakshmi, R.; Kambhala, Nagaiah; Angappane, S.

    2012-01-01

    Highlights: ► Enhanced magnetization of BiFeO 3 is important for strong magnetoelectric coupling. ► BiFeO 3 film with ZnO buffer layer was successfully synthesized by chemical method. ► Magnetization of BiFeO 3 has increased by more than 10 times with ZnO buffer layer. ► A mechanism for enhancement in ferromagnetism of BiFeO 3 film is proposed. - Abstract: Magnetic properties of BiFeO 3 films deposited on Si substrates with and without ZnO buffer layer have been studied in this work. We adopted the chemical solution deposition method for the deposition of BiFeO 3 as well as ZnO films. The x-ray diffraction measurements on the deposited films confirm the formation of crystalline phase of BiFeO 3 and ZnO films, while our electron microscopy measurements help to understand the morphology of few micrometers thick films. It is found that the deposited ZnO film exhibit a hexagonal particulate surface morphology, whereas BiFeO 3 film fully covers the ZnO surface. Our magnetic measurements reveal that the magnetization of BiFeO 3 has increased by more than ten times in BiFeO 3 /ZnO/Si film compared to BiFeO 3 /Si film, indicating the major role played by ZnO buffer layer in enhancing the magnetic properties of BiFeO 3 , a technologically important multiferroic material.

  10. Functional doped metal oxide films. Zinc oxide (ZnO) as transparent conducting oxide (TCO) titanium dioxide (TiO{sub 2}) as thermographic phosphor and protective coating

    Energy Technology Data Exchange (ETDEWEB)

    Nebatti Ech-Chergui, Abdelkader

    2011-07-29

    Metalorganic chemical vapor deposition (MOCVD) was used in the present work. Un-doped and Al-doped ZnO films were developed using two reactors: Halogen Lamp Reactor (HLR) (a type of Cold Wall Reactor) and Hot Wall Reactor (HWR), and a comparison was made between them in terms of the film properties. Zinc acetylacetonate was used as precursor for ZnO films while aluminum acetylacetonate was used for doping. The amount of Al doping can be controlled by varying the gas flow rate. Well ordered films with aluminum content between 0 and 8 % were grown on borosilicate glass and silicon. The films obtained are 0.3 to 0.5 {mu}m thick, highly transparent and reproducible. The growth rate of ZnO films deposited using HLR is less than HWR. In HLR, the ZnO films are well oriented along c-axis ((002) plane). ZnO films are commonly oriented along the c-axis due to its low surface free energy. On the other hand, the HWR films are polycrystalline and with Al doping these films aligned along the a-axis ((100) plane) which is less commonly observed. The best films were obtained with the HLR method showing a minimum electrical resistivity of 2.4 m{omega}cm and transmittance of about 80 % in the visible range. The results obtained for Al-doped films using HLR are promising to be used as TCOs. The second material investigated in this work was un-doped and doped titanium dioxide (TiO{sub 2}) films- its preparation and characterization. It is well known that thermographic phosphors can be used as an optical method for the surface temperature measurement. For this application, the temperature-dependent luminescence properties of europium (III)-doped TiO{sub 2} thin films were studied. It was observed that only europium doped anatase films show the phosphorescence. Rutile phase do not show phosphorescence. The films were prepared by the sol-gel method using the dip coating technique. The structures of the films were determined by X-ray diffraction (XRD). The excitation and the emission

  11. Adsorption of small gas molecules on pure and Al-doped graphene ...

    Indian Academy of Sciences (India)

    2017-10-03

    -doped graphene than that of pure graphene (PG). The Al-doped graphene shows the highest adsorption energy with NO2, NH3 and CO2 molecules, whereas the PG binds strongly with NO2. Therefore, the strong interactions ...

  12. Effect of Sn-doped on microstructural and optical properties of ZnO thin films deposited by sol-gel method

    International Nuclear Information System (INIS)

    Tsay, C.-Y.; Cheng, H.-C.; Tung, Y.-T.; Tuan, W.-H.; Lin, C.-K.

    2008-01-01

    In this study, transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto alkali-free glass substrates by a sol-gel method; the effect of Sn doping on crystallinity, microstructural and optical properties was investigated. The atomic percentages of dopant in ZnO-based sols were Sn/Zn = 0, 1, 2, 3, and 5 at.%. The as-deposited films were pre-heated at 300 deg. C for 10 min and then annealed in air at 500 deg. C for 1 h. The results show that Sn-doped ZnO thin films demonstrate obviously improved surface roughness, enhanced transmittance in the 400-600 nm wavelength range and reduced average crystallite size. Among all of the annealed ZnO-based films in this study, films doped with 2 at.% Sn concentration exhibited the best properties, namely an average transmittance of 90%, an RMS roughness value of 1.92 nm and a resistivity of 9.3 x 10 2 Ω-cm

  13. Effect of the substrate temperature and acidity of the spray solution on the physical properties of F-doped ZnO thin films deposited by chemical spray

    Energy Technology Data Exchange (ETDEWEB)

    De la L. Olvera, M.; Maldonado, A.; Asomoza, R. [Depto de Ingenieria Electrica, CINVESTAV-IPN, Apdo. Postal 14-70, D.F. 07000 Mexico (Mexico); Melendez-Lira, M. [Depto de Fisica, CINVESTAV-IPN, Apdo. Postal 14-740, D.F. 07000 Mexico (Mexico)

    2002-01-31

    F-doped ZnO thin films were prepared by using the spray pyrolysis technique. The dependence of the electrical, optical, structural and morphological properties on the substrate temperature and spray solution acidity was studied. Additionally, aging of the spray solution presents a clear effect on the resistivity of ZnO thin films. The best films obtained show a resistivity, mobility and carrier concentration of the order of 1.5x10{sup -2}{omega}cm, 6cm{sup 2}/Vs and 2x10{sup 19}cm{sup -3}, respectively. Wurtzite hexagonal structure, with a preferential growth along the [002] direction for all substrate temperatures and acidities used, was obtained. From scanning electron microscopy and atomic force microscopy analysis, it was determined that the grain size of the films decreases and its homogeneity increases when the acidity of the starting solution is increased. High optical transmittances, in the order of 90%, were obtained in all the cases.

  14. Enhanced output voltage generation via ZnO nanowires (50 nm): Effect of diameter thinning on voltage enhancement

    Science.gov (United States)

    Ahmad, Mansoor; Iqbal, Muhammad Azhar; Kiely, Janice; Luxton, Richard; Jabeen, Musarrat

    2017-05-01

    50 nm ZnO nanowires were grown on indium tin oxide (ITO) coated poly ethylene terephthalate (PET) substrates by adapting facile aqueous growth technique using low temperature and vacuum conditions. Prior to growth of ZnO nanowires, pure hexagonal wurtzite structured seed layer was grown on flexible substrates. Surface morphology of nanostructure has been examined by scanning electron microscopy (SEM). Vertical growth orientation has been evidenced in XRD patterns. Minute external mechanical force ( 50 nN) has produced periodic voltage peaks. 2.5 nm and 7.5 nm thick sputtered Pt electrode have been tested to obtain output voltages. 50 nm ZnO nanowires has produced a maximum output voltage of 2.717 volts having an output power density of 397.1 mW/cm2. By squeezing the diameter, we have reduced reverse leakage current through nanowires and enhanced output voltage.

  15. Adsorption of acetyl halide molecules on the surface of pristine and Al-doped graphene: Ab initio study

    Energy Technology Data Exchange (ETDEWEB)

    Rad, Ali Shokuhi, E-mail: a.shokuhi@gmail.com [Department of Chemical Engineering, Qaemshahr Branch, Islamic Azad University, Qaemshahr (Iran, Islamic Republic of); Kashani, Omid Razaghi [Department of Polymer Engineering, Qaemshahr Branch, Islamic Azad University, Qaemshahr (Iran, Islamic Republic of)

    2015-11-15

    Graphical abstract: - Highlights: • The adsorption of acetyl chloride and acetyl fluoride on Al-doped graphene were investigated. • The doped Al induces some changes in the electronic structure of graphene. • Notable orbital hybridizations are achieved upon adsorption. • Al-doped graphene can be used as a superior sensor for Acetyl halides. - Abstract: We have scrutinized the adsorption energy, electronic structure, natural bond analysis (NBO), density of state (DOS) and global indices for adsorption of acetyl chloride (AC) and acetyl fluoride (AF) on the surface of pristine graphene as well as Al-doped graphene. The adsorption energies have been calculated for the most stable configurations of the molecules on the surface of pristine and Al-doped graphene. According to the calculated parameters, there is very weak physical adsorption of AC and AF on pristine graphene while strong adsorption takes place in the case of Al-doped graphene. The charge transfer from adsorbed molecules to Al-doped graphene surface was confirmed by the natural bond orbital as well as the Mulliken population analysis while there is no charge transfer with pristine graphene. Additionally, the density of states results reveal that orbital hybridization takes place between above-mentioned molecules and Al-doped graphene sheet, whereas there is no hybridization between the molecules and the pristine graphene. Our calculated adsorption energies for the most stable position configurations of AC and AF on Al-doped graphene were −68.8 kJ mol{sup −1} (−52.6 kJ mol{sup −1} BSSE corrected energy) and −78.4 kJ mol{sup −1} (−64.3 kJ mol{sup −1} BSSE corrected energy) which are correspond to chemisorptions process respectively. These results point to the appropriateness of Al-doped graphene as a powerful adsorbent for practical applications.

  16. Nitrogen doping of ZnO thin films grown by plasma-assisted pulsed-laser deposition

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Duclére, J.-R.; McGlynn, E.; Henry, M.O.; O´Haire, R.; Mosnier, J.-P.

    2007-01-01

    Roč. 59, - (2007), s. 505-509 ISSN 0953-8984 Institutional research plan: CEZ:AV0Z10100522 Keywords : pulsed laser deposition * ZnO * doping * electron cyclotron resonance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.886, year: 2007

  17. Hydrothermal Growth of Quasi-Monocrystal ZnO Thin Films and Their Application in Ultraviolet Photodetectors

    Directory of Open Access Journals (Sweden)

    Yung-Chun Tu

    2015-01-01

    Full Text Available Quasi-monocrystal ZnO film grown using the hydrothermal growth method is used for the fabrication of Cu2O/ZnO heterojunction (HJ ultraviolet photodetectors (UV-PDs. The HJ was formed via the sputtering deposition of p-type Cu2O onto hydrothermally grown ZnO film (HTG-ZnO-film. The effect of annealing temperature in the nitrogen ambient on the photoluminescence spectra of the synthesized ZnO film was studied. The optoelectronic properties of Cu2O/ZnO film with various Cu2O thicknesses (250–750 nm under UV light (365 nm; intensity: 3 mW/cm2 were determined. The UV sensitivity of the HTG-ZnO-film-based UV-PDs and the sputtered ZnO-film-based UV-PDs were 55.6-fold (SHTG and 8.8-fold (Ssputter, respectively. The significant gain in sensitivity (SHTG/Ssputter = 630% of the proposed ZnO-film-based device compared to that for the device based on sputtered film can be attributed to the improved photoelectric properties of quasi-monocrystal ZnO film.

  18. Role of Al doping in the filament disruption in HfO2 resistance switches

    Science.gov (United States)

    Brivio, Stefano; Frascaroli, Jacopo; Spiga, Sabina

    2017-09-01

    Resistance switching devices, whose operation is driven by formation (SET) and dissolution (RESET) of conductive paths shorting and disconnecting the two metal electrodes, have recently received great attention and a deep general comprehension of their operation has been achieved. However, the link between switching characteristics and material properties is still quite weak. In particular, doping of the switching oxide layer has often been investigated only for looking at performance upgrade and rarely for a meticulous investigation of the switching mechanism. In this paper, the impact of Al doping of HfO2 devices on their switching operations, retention loss mechanisms and random telegraph noise traces is investigated. In addition, phenomenological modeling of the switching operation is performed for device employing both undoped and doped HfO2. We demonstrate that Al doping influences the filament disruption process during the RESET operation and, in particular, it contributes in preventing an efficient restoration of the oxide with respect to undoped devices.

  19. Tailoring structure and magnetic characteristics of strontium hexaferrite via Al doping engineering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, H.Z.; Hai, Y.N. [State Key Lab of High Power Semiconductor Laser of Changchun University Science and Technology, Changchun University Science and Technology, Changchun 130022 (China); Yao, B., E-mail: binyao@jlu.edu.cn [State Key Lab of Superhard Materials and Department of Physics, Jilin University, Changchun 130023 (China); Xu, Y. [School of Physics, Northeast Normal University, Changchun 130024 (China); Shan, L. [State Key Laboratory of Inorganic Synthesis and Preparative Chemistry and Department of Chemistry, Jilin University, Changchun 130012 (China); Xu, L.; Tang, J.L.; Wang, Q.H. [State Key Lab of High Power Semiconductor Laser of Changchun University Science and Technology, Changchun University Science and Technology, Changchun 130022 (China)

    2017-01-15

    Emerging structure and magnetic properties of Al{sup 3+}-modified SrFe{sub 12}O{sub 19} M-type hexaferrite system (SrAl{sub x}Fe{sub 12−x}O{sub 19}) had been studied in detail via doping engineering. With Al{sup 3+} ion nominal content ranging from 0 to 4 (0≤x≤4), the lattice parameters decrease due to the substitution of Fe{sup 3+} ions by smaller Al{sup 3+} ions, and the magnetization shows a continuous reduction with the increasing of Al content. For the coercivity, its value initially increases, reaching a maximum value of 16,876.9 Oe at x=3, and then reduces with the Al content further increase. When all the Fe{sup 3+} ions (x=4) are replaced by Al{sup 3+} ions, the net magnetic moment will be closed to zero, that will weaken the exchange interaction between Fe{sup 3+} ions, resulting in decrease of coercivity sharply and transformation ferrimagnetism into antiferromagnetism. The mechanism of the improvement of the magnetic properties induced by Al doping is discussed in the present work. - Highlights: • The coercivity reach a maximum value at x=3 in the SrAl{sub x}Fe{sub 12−x}O{sub 19}. • The coercivity of SrFe{sub 12}O{sub 19} increases due to nonmagnetic Al doping. • The saturation magnetization of SrFe{sub 12}O{sub 19} decreases due to nonmagnetic Al doping. • The transformation ferrimagnetism into antiferromagnetism by nonmagnetic Al doping.

  20. Effect of Al doping on the structural, optical and photoluminescence properties of ZnS nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Amaranatha Reddy, D. [Department of Physics, Hankuk University of Foreign Studies, Yongin 449-791 (Korea, Republic of); Liu, Chunli, E-mail: chunliliu@hufs.ac.kr [Department of Physics, Hankuk University of Foreign Studies, Yongin 449-791 (Korea, Republic of); Vijayalakshmi, R.P.; Reddy, B.K. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India)

    2014-01-05

    Highlights: • PEG capped ZnS:Al nanoparticles were synthesized through chemical route. • Structural, band gap, and PL studies were carried out. • Tunable band gap with Al doping concentration was noticed. • Appreciable enhancement in PL intensity was noticed in Al doped samples. • ZnS:Al nanoparticles may find applications in luminescent devices. -- Abstract: Un-doped and Al doped ZnS nanoparticles were prepared via an efficient and low cost chemical co-precipitation method using Poly Ethylene Glycol (PEG) as stabilizer. In the present study effect of Al concentration on the morphological, structural, and optical properties is studied using X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), Raman analysis, Fourier transform infrared spectroscopy (FTIR), diffuse reflectance spectroscopy (DRS) and photoluminescence (PL) studies. XRD, TEM, FTIR and Raman analysis indicated the formation of impurity-free nanocrystals with cubic structure. DRS studies revealed that as the Al dopant concentration increases the band gap increases in the range of 3.73–4.01 eV. The PL spectra of all samples exhibit a broad emission band in the range of 350–650 nm. The Gaussian fitting emission bands for ZnS are located at 382, 398, 417 and 445 nm. For Al doped ZnS nanoparticles in addition to the pure ZnS peaks two extra peaks are observed at 472 and 493 nm. Further, enhanced photoluminescence was observed with increasing Al content up to 8 at.% and beyond this photoluminescence quenching was noticed.

  1. Sonicated sol–gel preparation of nanoparticulate ZnO thin films with various deposition speeds: The highly preferred c-axis (0 0 2) orientation enhances the final properties

    International Nuclear Information System (INIS)

    Malek, M.F.; Mamat, M.H.; Khusaimi, Z.; Sahdan, M.Z.; Musa, M.Z.; Zainun, A.R.; Suriani, A.B.; Md Sin, N.D.; Abd Hamid, S.B.; Rusop, M.

    2014-01-01

    Highlights: • Minimum stress of highly c-axis oriented ZnO was grown at suitable deposition speed. • The ZnO crystal orientation was influenced by strain/stress of the film. • Minimum stress/strain of ZnO film leads to lower defects. • Bandgap and defects were closely intertwined with strain/stress. • We report additional optical and electrical properties based on deposition speed. -- Abstract: Zinc oxide (ZnO) thin films have been deposited onto glass substrates at various deposition speeds by a sonicated sol–gel dip-coating technique. This work studies the effects of deposition speed on the crystallisation behaviour and optical and electrical properties of the resulting films. X-ray diffraction (XRD) analysis showed that thin films were preferentially oriented along the (0 0 2) c-axis direction of the crystal. The transformation sequence of strain and stress effects in ZnO thin films has also been studied. The films deposited at a low deposition speed exhibited a large compressive stress of 0.78 GPa, which decreased to 0.43 GPa as the deposition speed increased to 40 mm/min. Interestingly, the enhancement in the crystallinity of these films led to a significant reduction in compressive stress. All films exhibited an average transmittance of greater than 90% in the visible region, with absorption edges at ∼380 nm. The photoluminescence (PL) measurements indicated that the intensity of the emission peaks varied significantly with deposition speed. The optical band gap energy (E g ) was evaluated as 3.276–3.289 eV, which increased with decreasing compressive stress along the c-axis. The energy band gap of the resulting ZnO films was found to be strongly influenced by the preferred c-axis (0 0 2) orientation

  2. Sonicated sol–gel preparation of nanoparticulate ZnO thin films with various deposition speeds: The highly preferred c-axis (0 0 2) orientation enhances the final properties

    Energy Technology Data Exchange (ETDEWEB)

    Malek, M.F., E-mail: firz_solarzelle@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M.H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Khusaimi, Z. [NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia); Sahdan, M.Z. [Microelectronic and Nanotechnology Centre (MiNT), Universiti Tun Hussein Onn Malaysia (UTHM), 86400 Batu Pahat, Johor (Malaysia); Musa, M.Z. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Zainun, A.R. [Faculty of Electrical and Electronics Engineering, Universiti Malaysia Pahang (UMP), Lebuhraya Tun Razak, 26300 Kuantan, Pahang (Malaysia); Suriani, A.B. [Department of Physics, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris, 35900 Tanjung Malim, Perak (Malaysia); Md Sin, N.D. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Abd Hamid, S.B. [Nanotechnology and Catalysis Research Centre (NANOCAT), Universiti Malaya (UM), 50603 Kuala Lumpur (Malaysia); Rusop, M. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2014-01-05

    Highlights: • Minimum stress of highly c-axis oriented ZnO was grown at suitable deposition speed. • The ZnO crystal orientation was influenced by strain/stress of the film. • Minimum stress/strain of ZnO film leads to lower defects. • Bandgap and defects were closely intertwined with strain/stress. • We report additional optical and electrical properties based on deposition speed. -- Abstract: Zinc oxide (ZnO) thin films have been deposited onto glass substrates at various deposition speeds by a sonicated sol–gel dip-coating technique. This work studies the effects of deposition speed on the crystallisation behaviour and optical and electrical properties of the resulting films. X-ray diffraction (XRD) analysis showed that thin films were preferentially oriented along the (0 0 2) c-axis direction of the crystal. The transformation sequence of strain and stress effects in ZnO thin films has also been studied. The films deposited at a low deposition speed exhibited a large compressive stress of 0.78 GPa, which decreased to 0.43 GPa as the deposition speed increased to 40 mm/min. Interestingly, the enhancement in the crystallinity of these films led to a significant reduction in compressive stress. All films exhibited an average transmittance of greater than 90% in the visible region, with absorption edges at ∼380 nm. The photoluminescence (PL) measurements indicated that the intensity of the emission peaks varied significantly with deposition speed. The optical band gap energy (E{sub g}) was evaluated as 3.276–3.289 eV, which increased with decreasing compressive stress along the c-axis. The energy band gap of the resulting ZnO films was found to be strongly influenced by the preferred c-axis (0 0 2) orientation.

  3. Adsorption of chloroform on N-doped and Al-doped graphene: A first-principle study

    Science.gov (United States)

    Tian, Y. L.; Ren, J. F.; Yue, W. W.; Chen, M. N.; Hu, G. C.; Yuan, X. B.

    2017-10-01

    Adsorption properties of chloroform (CHCl3) on pristine graphene, N-doped graphene and Al-doped graphene are studied by using density functional theory (DFT) calculations. Our calculations reveal that there are higher charge transfer and smaller adsorption distance and bigger adsorption energy when CHCl3 is adsorbed on Al-doped graphene comparing with adsorptions on pristine graphene and N-doped graphene. The p-p orbital coupling between Al and Cl is stronger than those of Csbnd Cl and Nsbnd Cl, which suggests that Al-doped graphene is more sensitive to the adsorption of CHCl3. Al-doped graphene can be a good candidate for sensors or catalyst to detect and adsorb CHCl3.

  4. Synthesis of ZnO Nanoparticles to Fabricate a Mask-Free Thin-Film Transistor by Inkjet Printing

    Directory of Open Access Journals (Sweden)

    Chao-Te Liu

    2012-01-01

    Full Text Available We report a low-cost, mask-free, reduced material wastage, deposited technology using transparent, directly printable, air-stable semiconductor slurries and dielectric solutions. We have demonstrate an emerging process for fabricating printable transistors with ZnO nanoparticles as the active channel and poly(4-vinylphenol (PVP matrix as the gate dielectric, respectively, and the inkjet-printed ZnO TFTs have shown to exhibit the carrier mobility of 0.69 cm2/Vs and the threshold voltage of 25.5 V. We suggest that the printable materials and the printing technology enable the use of all-printed low-cost flexible displays and other transparent electronic applications.

  5. Effect of initialization time on application potentiality of a ZnO thin film based LPG sensor

    Directory of Open Access Journals (Sweden)

    Parta Mitra

    2009-09-01

    Full Text Available A prototype electronic LPG (Liquid Petroleum Gas sensor based on zinc oxide (ZnO film has been fabricated. The objective of the present work was to investigate the importance of initialization time (also called warm-up time on the application potentiality of the ZnO based alarm. The role of sensor geometry on initialization time is presented. The electronic circuitry of the prototype LPG device alarm is discussed. It is shown that that the initialization time depends on the switch off time (or the time for which the sensor was kept idle. The resistive mode sensors can be fixed at 40% LEL (Lower Explosive Limit of LPG for safe operation.

  6. Photocatalytic activity of V doped ZnO nanoparticles thin films for the removal of 2- chlorophenol from the aquatic environment under natural sunlight exposure.

    Science.gov (United States)

    Salah, Numan; Hameed, A; Aslam, M; Babkair, Saeed S; Bahabri, F S

    2016-07-15

    Vanadium doped ZnO powders were used as precursors to deposit thin films of V(5+) incorporated ZnO nanoparticles on glass substrates by the pulsed laser deposition technique. The observed variations in Raman signals, visible region shift in the diffuse reflectance spectra along with a small shift in the (101) reflections of the X-ray diffraction (XRD) confirmed the insertion of V(5+) ions in ZnO lattice. No other additional reflection in the XRD results other than ZnO further endorsed the occupation of lattice positions by V entities rather than independent oxide formation. The asymmetric XPS peaks of Zn2p and V2p core levels confirmed the existence of both in the vicinity. The existence of minimal proportion of V(3+) along with V(5+) states varied the alteration of the oxidation states V in the synthetic route. The SEM images at various resolutions displayed the uniform distribution identical nanoparticles without the presence of additional phases in the deposited films. The SEM cross-section measurements revealed the uniform thickness of ∼90 nm of each film, whereas the surface studies of the films were performed by AFM. The as-synthesized films were tested for photocatalytic activity in sunlight illumination for the removal of 2-chlorophenol. The unique feature of the study was the estimation of the photocatalytic activity 20 ppm of 2-chlorophenol by exposing the low exposed area. The degradation of the substrate was measured by liquid phase UV-vis spectroscopy, whereas total organic carbon measurement revealed the mineralization of the substrate. The released Cl(-) ions were also measured by ion chromatography. The estimated flatband potentials and pHzpc values of the V doped materials, by Mott-Schottky analysis and zeta potential measurements respectively, were correlated with the photocatalytic activity. The kinetics of the photocatalytic degradation/mineralization process was estimated and results were correlated with the plausible mechanism. Copyright

  7. Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substrates

    International Nuclear Information System (INIS)

    Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N.

    2007-01-01

    The effects of thermal annealing on Hall-effect measurement and photoluminescence (PL) from undoped n-type ZnO/GaAs thin-film samples have been studied. The evolutions of carrier concentration, electrical resistivity, and PL spectrum at various annealing conditions reveal that the dominant mechanism that affects the electrical and PL properties is dependent on the amount of thermal energy and the ambient pressure applied during the annealing process. At low annealing temperatures, annihilation of native defects is dominant in reducing the carrier concentration and weakening the low-energy tail of the main PL peak, while the GaAs substrate plays only a minor role in carrier compensations. For the higher temperatures, diffusion of Ga atoms from the GaAs substrate into ZnO film leads to a more n-type conduction of the sample. As a result, the PL exhibits a high-energy tail due to the high-level doping

  8. Morphological variations of Mn-doped ZnO dilute magnetic semiconductors thin films grown by succesive ionic layer by adsorption reaction method.

    Science.gov (United States)

    Balamurali, Subramanian; Chandramohan, Rathinam; Karunakaran, Marimuthu; Mahalingam, Thayan; Parameswaran, Padmanaban; Suryamurthy, Nagamani; Sukumar, Arcod Anandhakrishnan

    2013-07-01

    Transparent conducting Mn-doped ZnO thin films have been prepared by successive ionic layer by adsorption reaction (SILAR) method. The deposition conditions have been optimized based on their structure and on the formation of smoothness, adherence, and stoichiometry. The results of the studies by X-ray diffraction, scanning electron microscope (SEM), reveal the varieties of structural and morphological modifications feasible with SILAR method. The X-ray diffraction patterns confirm that the ZnO:Mn has wurtzite structure. The interesting morphological variations with dopant concentration are observed and discussed. The films' quality is comparable with those grown with physical methods and is suitable for spintronic applications. Copyright © 2013 Wiley Periodicals, Inc.

  9. Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2015-01-01

    Full Text Available Transparent conducting titanium-doped zinc oxide (TZO thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2 flow ratios (RH and substrate temperatures (TS. The optimal RH value for achieving high conducting TZO:H thin film decreased from 10% to 1% when TS increased from RT to 300°C. The lowest resistivity of 9.2×10-4 Ω-cm was obtained as TS=100°C and RH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002 direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasing RH. The average visible transmittance decreased with increasing RH for the RT-deposited film, while it had not considerably changed with different RH for the 300°C-deposited films. The optical bandgap increased as RH increased, which is consistent with the Burstein-Moss effect. The figure of merits indicated that TS=100°C and RH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

  10. Growth stimulation of Bacillus cereus and Pseudomonas putida using nanostructured ZnO thin film as transducer element

    Energy Technology Data Exchange (ETDEWEB)

    Loukanov, Alexandre, E-mail: loukanov@mail.saitama-u.ac.jp [Saitama University, Department of Chemistry, Faculty of Science (Japan); Filipov, Chavdar [University of Forestry, Department of Infectious pathology, hygiene, technology and control of food stuffs of animal origin, Faculty of Veterinary Medicine (Bulgaria); Valcheva, Violeta [Bulgarian Academy of Science, Department of Infectious Diseases, Institute of microbiology (Bulgaria); Lecheva, Marta [University of Mining and Geology “St. Ivan Rilski”, Laboratory of Engineering NanoBiotechnology, Department of Engineering Geoecology (Bulgaria); Emin, Saim [University of Nova Gorica, Materials Research Laboratory (Slovenia)

    2015-04-15

    The semiconductor zinc oxide nanomaterial (ZnO or ZnO:H) is widely used in advanced biosensor technology for the design of highly-sensitive detector elements for various applications. In the attempt to evaluate its effect on common microorganisms, two types of nanostructured transducer films have been used (average diameter 600–1000 nm). They have been prepared by using both wet sol–gel method and magnetron sputtering. Their polycrystalline structure and specific surface features have been analyzed by X-ray diffraction (XRD), scanning electron microscope, and atomic force microscope. The assessment of growth stimulation of bacteria was determined using epifluorescent microscope by cell staining with Live/Dead BacLight kit. In our experiments, the growth stimulation of Gram-positive and Gram-negative bacteria on nanostructured ZnO film is demonstrated by Bacillus cereus and Pseudomonas putida. These two bacterial species have been selected, because they are well known and studied in biosensor technologies, with structural difference of their cell walls. These pathogens are easy for with common source in the liquid food or some commercial products. Our data has revealed that the method of transducer film preparation influences strongly bacterial inhibition and division. These results present the transforming signal precisely, when ZnO is used in biosensor applications.

  11. Growth stimulation of Bacillus cereus and Pseudomonas putida using nanostructured ZnO thin film as transducer element

    Science.gov (United States)

    Loukanov, Alexandre; Filipov, Chavdar; Valcheva, Violeta; Lecheva, Marta; Emin, Saim

    2015-04-01

    The semiconductor zinc oxide nanomaterial (ZnO or ZnO:H) is widely used in advanced biosensor technology for the design of highly-sensitive detector elements for various applications. In the attempt to evaluate its effect on common microorganisms, two types of nanostructured transducer films have been used (average diameter 600-1000 nm). They have been prepared by using both wet sol-gel method and magnetron sputtering. Their polycrystalline structure and specific surface features have been analyzed by X-ray diffraction (XRD), scanning electron microscope, and atomic force microscope. The assessment of growth stimulation of bacteria was determined using epifluorescent microscope by cell staining with Live/Dead BacLight kit. In our experiments, the growth stimulation of Gram-positive and Gram-negative bacteria on nanostructured ZnO film is demonstrated by Bacillus cereus and Pseudomonas putida. These two bacterial species have been selected, because they are well known and studied in biosensor technologies, with structural difference of their cell walls. These pathogens are easy for with common source in the liquid food or some commercial products. Our data has revealed that the method of transducer film preparation influences strongly bacterial inhibition and division. These results present the transforming signal precisely, when ZnO is used in biosensor applications.

  12. Photoluminescence and electrochemical properties of transparent CeO{sub 2}-ZnO nanocomposite thin films prepared by Pechini method

    Energy Technology Data Exchange (ETDEWEB)

    Sani, Z.K.; Ghodsi, F.E.; Mazloom, J. [University of Guilan, Department of Physics, Faculty of Science, Namjoo Ave, P.O. Box 41335-1914, Rasht (Iran, Islamic Republic of)

    2017-02-15

    Nanocomposite thin films of CeO{sub 2}-ZnO with different molar ratios of Zn/Ce (=0, 0.25, 0.5, 0.75 and 1) were prepared by the Pechini sol-gel route. Various spectroscopic and electrochemical techniques were applied to investigate the films. XRD patterns of all the samples exhibited the peaks corresponding to cubic fluorite structure of ceria and the (101) and (103) peaks of ZnO with hexagonal structure was just observed in the sample with molar ratio of 1. EDS confirmed the presence of constituent of element in the samples. FESEM images of the films showed a surface composed of nanograins. AFM analysis revealed that root mean square roughness was enhanced as molar ratio of Zn/Ce increased. Moreover, fractal dimension of surfaces were calculated by cube counting approach. Optical measurements indicated that the film with molar ratio of 1 has the highest transmission and lowest reflectivity. The optical band gap values varied between 2.95 and 3.42 eV. The compositional dependence of refractive index and extinction coefficient were reported. The UV and blue emission appeared in PL spectra. The highest photoluminescence emission intensity was observed in the 1:1 molar ratio sample. The cyclic voltammetry measurements indicated the highest charge density (9.75 mC cm{sup -2}) and diffusion coefficient (3.507 x 10{sup -17} cm{sup 2} s{sup -1}) belonged to the Ce/Zn (1:1) thin film. (orig.)

  13. Characterization of ZnO Interlayers for Organic Solar Cells: Correlation of Electrochemical Properties with Thin-Film Morphology and Device Performance.

    Science.gov (United States)

    Ou, Kai-Lin; Ehamparam, Ramanan; MacDonald, Gordon; Stubhan, Tobias; Wu, Xin; Shallcross, R Clayton; Richards, Robin; Brabec, Christoph J; Saavedra, S Scott; Armstrong, Neal R

    2016-08-03

    This report focuses on the evaluation of the electrochemical properties of both solution-deposited sol-gel (sg-ZnO) and sputtered (sp-ZnO) zinc oxide thin films, intended for use as electron-collecting interlayers in organic solar cells (OPVs). In the electrochemical studies (voltammetric and impedance studies), we used indium-tin oxide (ITO) over coated with either sg-ZnO or sp-ZnO interlayers, in contact with either plain electrolyte solutions, or solutions with probe redox couples. The electroactive area of exposed ITO under the ZnO interlayer was estimated by characterizing the electrochemical response of just the oxide interlayer and the charge transfer resistance from solutions with the probe redox couples. Compared to bare ITO, the effective electroactive area of ITO under sg-ZnO films was ca. 70%, 10%, and 0.3% for 40, 80, and 120 nm sg-ZnO films. More compact sp-ZnO films required only 30 nm thicknesses to achieve an effective electroactive ITO area of ca. 0.02%. We also examined the electrochemical responses of these same ITO/ZnO heterojunctions overcoated with device thickness pure poly(3-hexylthiophehe) (P3HT), and donor/acceptor blended active layers (P3HT:PCBM). Voltammetric oxidation/reduction of pure P3HT thin films on ZnO/ITO contacts showed that pinhole pathways exist in ZnO films that permit dark oxidation (ITO hole injection into P3HT). In P3HT:PCBM active layers, however, the electrochemical activity for P3HT oxidation is greatly attenuated, suggesting PCBM enrichment near the ZnO interface, effectively blocking P3HT interaction with the ITO contact. The shunt resistance, obtained from dark current-voltage behavior in full P3HT/PCBM OPVs, was dependent on both (i) the porosity of the sg-ZnO or sp-ZnO films (as revealed by probe molecule electrochemistry) and (ii) the apparent enrichment of PCBM at ZnO/P3HT:PCBM interfaces, both effects conveniently revealed by electrochemical characterization. We anticipate that these approaches will be

  14. Development of transparent thin film transistors on PES polymer substrates

    International Nuclear Information System (INIS)

    Yun, Eui-Jung; Jung, Jin-Woo; Ko, Kyung-Nam; Song, Young-Wook; Nam, Hyoung; Cho, Nam-Ihn

    2010-01-01

    In this study, we demonstrate ZnO-based transparent thin film transistors (TTFT's) implemented on polyethersulfone (PES) polymer substrates. For the developed TTFT's, radio-frequency magnetron sputter techniques were used to deposit Al-doped ZnO (AZO) at zero oxygen partial pressures for the source, the drain, and the gate-contact electrodes, undoped ZnO at low oxygen partial pressures for the active p-type layer, and SiO 2 for the gate dielectric. The TTFT's were processed at room temperature (RT), except for a 100 .deg. C sputtering step to deposit the AZO source, drain, and gate-contact electrodes. The devices have bottom-gate structures with top contacts, are optically transparent, and operate in an enhancement mode with a threshold voltage of +13 V, a mobility of 0.1 cm 2 /Vs, an on-off ratio of about 0.5 x 10 3 and, a sub-threshold slope of 4.1 V/decade.

  15. A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

    International Nuclear Information System (INIS)

    Li, X. D.; Chen, T. P.; Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

    2014-01-01

    Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε 1 ) and imaginary (ε 2 ) parts of the dielectric function decrease significantly, and ε 2 shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies

  16. Self-compensation in ZnO thin films: An insight from X-ray photoelectron spectroscopy, Raman spectroscopy and time-of-flight secondary ion mass spectroscopy analyses

    International Nuclear Information System (INIS)

    Saw, K.G.; Ibrahim, K.; Lim, Y.T.; Chai, M.K.

    2007-01-01

    As-grown ZnO typically exhibits n-type conductivity and the difficulty of synthesizing p-type ZnO for the realization of ZnO-based optoelectronic devices is mainly due to the compensation effect of a large background n-type carrier concentration. The cause of this self-compensation effect has not been conclusively identified although oxygen vacancies, zinc interstitials and hydrogen have been suggested. In this work, typical n-type ZnO thin films were prepared by sputtering and investigated using X-ray photoelectron spectroscopy, Raman spectroscopy and time-of-flight secondary ion mass spectroscopy to gain an insight on the possible cause of the self-compensation effect. The analyses found that the native defect that most likely behaved as the donor was zinc interstitial but some contribution of n-type conductivity could also come from the electronegative carbonates or hydrogen carbonates incorporated in the ZnO thin films

  17. Liquid Solution Phase Epitaxial Growth of Al-doped f-SiC for LEDs

    DEFF Research Database (Denmark)

    Tang, Kai; Ma, Xiang; van der Eijk, Casper

    required for LPE is relatively inexpensive. The fundamental backgrounds for LPE growth of Al-doped 4H-SiC are first introduced and elaborated by new thermodynamic and crystal growth models. Based on theoretical analyses, the new designed experimental apparatus is then constructed. The experimental results...... are presented and discussed. Since operational temperature of LPE growth is much lower than that currently used in physical vapour transport (PVT) process, it is expected to save the energy consumption for SiC crystal growth....

  18. Effect of growth interruption on the crystalline quality and electrical properties of Ga-doped ZnO thin film deposited on quartz substrate by magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Geun-Hyoung

    2013-01-01

    Ga-doped ZnO(GZO) thin films were deposited on the quartz substrate by magnetron sputtering system with growth interruption technique. As the number of interruptions and interruption time increased, the carrier concentration and Hall mobility in GZO films significantly increased. As a result, the resistivity of GZO films decreased. The optical transmittance of GZO films also increased with the number of interruption and interruption time. The transmittance showed over 90% in visual region. Atomic force microscopy measurement showed that the film surface became smoother with an increase of the number of interruption. In addition, the crystalline quality and electrical properties of GZO films were more improved when the growth interruption was employed with a temperature gradient. - Highlights: • Ga-doped ZnO thin films were deposited with growth interruption technique. • The crystallinity of the films was improved with the number of interruptions. • The crystallinity of the films was improved as the interruption time increased. • The growth interruption with a temperature gradient more improved the film quality

  19. Suppression effect of silicon (Si on Er3+ 1.54μm excitation in ZnO thin films

    Directory of Open Access Journals (Sweden)

    Bo Xu

    2016-08-01

    Full Text Available We have investigated the photoluminescence (PL characteristics of ZnO:Er thin films on Si (100 single crystal and SiO2-on-silicon (SiO2 substrates, synthesized by radio frequency magnetron sputtering. Rutherford backscattering/channeling spectrometry (RBS, X-ray diffraction (XRD and atomic force microscope (AFM were used to analyze the properties of thin films. The diffusion depth profiles of Si were determined by second ion mass spectrometry (SIMS. Infrared spectra were obtained from the spectrometer and related instruments. Compared with the results at room temperature (RT, PL (1.54μm intensity increased when samples were annealed at 250°C and decreased when at 550°C. A new peak at 1.15μm from silicon (Si appeared in 550°C samples. The Si dopants in ZnO film, either through the diffusion of Si from the substrate or ambient, directly absorbed the energy of pumping light and resulted in the suppression of Er3+ 1.54μm excitation. Furthermore, the energy transmission efficiency between Si and Er3+ was very low when compared with silicon nanocrystal (Si-NC. Both made the PL (1.54μm intensity decrease. All the data in experiments proved the negative effects of Si dopants on PL at 1.54μm. And further research is going on.

  20. The preparation of Zn-ferrite epitaxial thin film from epitaxial Fe3O4:ZnO multilayers by ion beam sputtering deposition

    International Nuclear Information System (INIS)

    Su, Hui-Chia; Dai, Jeng-Yi; Liao, Yen-Fa; Wu, Yu-Han; Huang, J.C.A.; Lee, Chih-Hao

    2010-01-01

    A new method to grow a well-ordered epitaxial ZnFe 2 O 4 thin film on Al 2 O 3 (0001) substrate is described in this work. The samples were made by annealing the ZnO/Fe 3 O 4 multilayer which was grown with low energy ion beam sputtering deposition. Both the Fe 3 O 4 and ZnO layers were found grown epitaxially at low temperature and an epitaxial ZnFe 2 O 4 thin film was formed after annealing at 1000 o C. X-ray diffraction shows the ZnFe 2 O 4 film is grown with an orientation of ZnFe 2 O 4 (111)//Al 2 O 3 (0001) and ZnFe 2 O 4 (1-10)//Al 2 O 3 (11-20). X-ray absorption spectroscopy studies show that Zn 2+ atoms replace the tetrahedral Fe 2+ atoms in Fe 3 O 4 during the annealing. The magnetic properties measured by vibrating sample magnetometer show that the saturation magnetization of ZnFe 2 O 4 grown from ZnO/Fe 3 O 4 multilayer reaches the bulk value after the annealing process.

  1. Spectroscopic ellipsometry, optical, structural and electrical investigation of sprayed pure and Sn-doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Attaf N.

    2013-03-01

    Full Text Available In this work, we report the transparent pure and Sn-doped zinc oxide (ZnO. The films were deposited onto microscope glass substrate which was heated at 350±5C° by ultrasonic spray pyrolysis (U S P deposition technique. The concentrations of Sn were selected within the range of 0-3% by step of 0.5% and the time deposition is kept at 5 min. A (002-oriented wurtzite crystal structure was confirmed by X-rays patterns; and grain size varied within the range 7.37-14.84nm, and cristanillity is calculated goes from14.4 to 45.9%. Based on UV-VIS-IR analysis, the results revealed the high transparency of the sprayed films which exceeds 90%. The band gap energy was of 3.26-3.30 eV. The film thickness was estimated by spectroscopy ellipsometry and the found values were of 165-270nm. The refractive index is in the range of 2.75.The obtained electrical parameters were around 1018 cm−3, 3.6 cm2/Vs, 1.6Ω.cm; 5.8cm3/C. finally the Sn-doping has influenced the physical parameters of asground ZnO films

  2. Physical and photo-electrochemical characterizations of ZnO thin films deposited by ultrasonic spray method: Application to HCrO{sub 4}{sup −} photoreduction

    Energy Technology Data Exchange (ETDEWEB)

    Zebbar, N. [Department of Materials and Compounds, Faculty of Physics, USTHB, BP 32, Algiers 16111 (Algeria); Trari, M., E-mail: solarchemistry@gmail.com [Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry, USTHB, BP 32, Algiers 16111 (Algeria); Doulache, M. [Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry, USTHB, BP 32, Algiers 16111 (Algeria); Boughelout, A.; Chabane, L. [Department of Materials and Compounds, Faculty of Physics, USTHB, BP 32, Algiers 16111 (Algeria)

    2014-02-15

    ZnO thin films, prepared by ultrasonic spray onto glass substrate, crystallize in the wurtzite structure. The XRD pattern shows preferential orientation along the [0 0 2] direction. The films deposited at 350 °C consist of 60 nm crystallites with an average thickness of ∼150 nm and SEM images show rough surface areas. The gap increases with increasing the temperature of the substrate and a value of 3.25 eV is obtained for films deposited at 350 °C. ZnO is nominally non-stochiometric and exhibits n-type conduction because of the native defects such as oxygen vacancies (V{sub O}) and/or interstitial zinc atom (Zn{sub i}) which act as donor shallows. The conductivity is thermally activated and obeys to an exponential type law with activation energy of 57 meV and an electron mobility of 7 cm{sup 2} V{sup −1} s{sup −1}. The capacitance-voltage (C{sup −2} V) measurement in acid electrolyte (pH ∼ 3) shows a linear behavior with a positive slope, characteristic of n-type conduction. A flat band potential of −0.70 V{sub SCE} and a donors density of 5.30 × 10{sup 16} cm{sup −3} are determined. The Nyquist plot exhibits two semicircles attributed to a capacitive behavior with a low density of surface states within the gap region. The centre is localized below the real axis with a depletion angle of 16° ascribed to a constant phase element (CPE) due to the roughness of the film. The energy band diagram assesses the potentiality of ZnO films for the photo-electrochemical conversion. As application, 94% of chromate (3.8 × 10{sup −4} M) is reduced after 6 h under sunlight (AM 1) with a quantum yield of 0.06% and the oxidation follows a first order kinetic.

  3. Rapid thermal annealing of sputter-deposited ZnO:Al films for microcrystalline Si thin-film solar cells

    Directory of Open Access Journals (Sweden)

    Hanajiri T.

    2012-06-01

    Full Text Available Rapid thermal annealing of sputter-deposited ZnO and Al-doped ZnO (AZO films with and without an amorphous silicon (a-Si capping layer was investigated using a radio-frequency (rf argon thermal plasma jet of argon at atmospheric pressure. The resistivity of bare ZnO films on glass decreased from 108 to 104–105 Ω cm at maximum surface temperatures Tmaxs above 650 °C, whereas the resistivity increased from 10-4 to 10-3–10-2Ω cm for bare AZO films. On the other hand, the resistivity of AZO films with a 30-nm-thick a-Si capping layer remained below 10-4Ω cm, even after TPJ annealing at a Tmax of 825 °C. The film crystallization of both AZO and a-Si layers was promoted without the formation of an intermixing layer. Additionally, the crystallization of phosphorous- and boron-doped a-Si layers at the sample surface was promoted, compared to that of intrinsic a-Si under the identical plasma annealing conditions. The TPJ annealing of n+-a-Si/textured AZO was applied for single junction n-i-p microcrystalline Si thin-film solar cells.

  4. Modelling the growth of ZnO thin films by PVD methods and the effects of post-annealing.

    Science.gov (United States)

    Blackwell, Sabrina; Smith, Roger; Kenny, Steven D; Walls, John M; Sanz-Navarro, Carlos F

    2013-04-03

    Results are presented for modelling of the evaporation and magnetron sputter deposition of Zn(x)O(y) onto an O-terminated ZnO (0001¯) wurtzite surface. Growth was simulated through a combination of molecular dynamics (MD) and an on-the-fly kinetic Monte Carlo (otf-KMC) method, which finds diffusion pathways and barriers without prior knowledge of transitions. We examine the effects of varying experimental parameters, such as substrate bias, distribution of the deposition species and annealing temperature. It was found when comparing evaporation and sputtering growth that the latter process results in a denser and more crystalline structure, due to the higher deposition energy of the arriving species. The evaporation growth also exhibits more stacking faults than the sputtered growth. Post-annealing at 770 K did not allow complete recrystallization, resulting in films which still had stacking faults where monolayers formed in the zinc blende phase, whereas annealing at 920 K enabled the complete recrystallization of some films to the wurtzite structure. At the latter temperature atoms could also sometimes be locked in the zinc blende phase after annealing. When full recrystallization did not take place, both wurtzite and zinc blende phases were seen in the same layer, resulting in a phase boundary. Investigation of the various distributions of deposition species showed that, during evaporation, the best quality film resulted from a stoichiometric distribution where only ZnO clusters were deposited. During sputtering, however, the best quality film resulted from a slightly O rich distribution. Two stoichiometric distributions, one involving mainly ZnO clusters and the other involving mainly single species, showed that the distribution of deposition species makes a huge impact on the grown film. The deposition of predominantly single species causes many more O atoms at the surface to be sputtered or reflected, resulting in an O deficiency of up to 18% in the

  5. Response of Si- and Al-doped graphenes toward HCN: A computational study

    International Nuclear Information System (INIS)

    Rastegar, Somayeh F.; Peyghan, Ali Ahmadi; Hadipour, Nasser L.

    2013-01-01

    Highlights: ► Sensitivity of Si- and Al-doped graphene (SiG and AlG) toward HCN is investigated. ► The electronic properties of AlG are significantly changed in the presence of HCN. ► It is established that AlG can be a good sensor for HCN molecule. - Abstract: Sensitivity of Si- and Al-doped graphenes (SiG and AlG) toward toxic HCN has been investigated using density functional theory (DFT) in terms of energetic, geometric and electronic properties. Optimized configurations corresponding to physisorption and, subsequently, chemisorption of HCN on each surface have been identified. It is found that HCN molecule can be adsorbed on impurity atoms with adsorption energies about −27.20 and −38.75 kcal/mol on the SiG and the AlG, respectively. By comparing to HCN adsorption on SiG, it can be inferred that molecular HCN adsorbed on AlG can induce significant change in AlG conductivity. On the basis of calculated changes in the HOMO/LUMO energy gap it is found that electronic properties of AlG are sensitive toward adsorption of HCN and the reverse is correct for SiG, suggesting that the AlG may be a promising sensor for HCN.

  6. High Temperature Thermoelectric Properties of ZnO Based Materials

    DEFF Research Database (Denmark)

    Han, Li

    on the electron and phonon transport was analyzed and discussed in detail. In order to solve the problems of high thermal conductivity without the deterioration of electrical conductivity by nanostructuring for conventional ZnO materials, the doped ZnCdO material was proposed as a new n-type oxide thermoelectric...... material. The material is sintered in air in order to maintain the oxygen stoichiometry and avoid the stability issues. The successful alloying of CdO with ZnO at a molar ratio of 1:9 resulted in a significant reduction of thermal conductivity up to 7-fold at room temperature. By careful selection......O. Following that, the nanostructuring effect for Al-doped ZnO was systematically investigated using samples with different microstructure morphologies. At last, the newly developed ZnCdO materials with superior thermoelectric properties and thermal stability were introduced as promising substitutions...

  7. Electronic and atomic structure of complex defects in Al- and Ga-highly doped ZnO films

    International Nuclear Information System (INIS)

    Menéndez-Proupin, Eduardo; Palacios, Pablo; Wahnón, Perla

    2015-01-01

    Point defects in Ga- and Al-doped ZnO thin films are studied by means of first principles electronic structure calculations. Candidate defects are identified to explain recently observed differences in electrical and spectroscopic behavior of both systems. Substitutional doping in Ga–ZnO explain the metallic behavior of the electrical properties. Complexes of interstitial oxygen with substitutional Ga can behave as acceptor and cause partial compensation, as well as gap states below the conduction band minimum as observed in photoemission experiments. Zn vacancies can also act as compensating acceptors. On the other hand, the semiconducting behavior of Al–ZnO and the small variation in the optical gap compared with pure ZnO, can be explained by almost complete compensation between acceptor Zn vacancies and substitutional Al donors. Interstitial Al can also be donor levels and can be the origin of the small band observed in photoemission experiments below the Fermi level. Combinations of substitutional Al with interstitial oxygen can act simultaneously as compensating acceptor and generator of the mentioned photoemission band. The theoretical calculations have been done using density functional theory (DFT) within the generalized gradient approximation with on-site Coulomb interaction. In selected cases, DFT calculations with semilocal-exact exchange hybrid functionals have been performed. Results explain photoelectron spectra of Ga–ZnO and Al–ZnO at the corresponding doping levels. - Highlights: • Defects in Ga- and Al-heavy-doped ZnO films are studied by quantum calculations. • Defects compatible with electrical, optical, and HAXPES spectra are proposed. • Doping efficiency is reduced by Zn vacancies and O interstitials. • HAXPES bands near the Fermi level are induced by Al i , and complexes Ga Zn -O i , and Al Zn -O i

  8. Electronic and atomic structure of complex defects in Al- and Ga-highly doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Menéndez-Proupin, Eduardo [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Departamento de Física, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, 780-0003 Ñuñoa, Santiago (Chile); Palacios, Pablo, E-mail: pablo.palacios@upm.es [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Dpt. FAIAN, E.T.S.I. Aeronáutica y del Espacio, UPM, Pz. Cardenal Cisneros 3, 28040 Madrid (Spain); Wahnón, Perla [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Dpt. TFO, E.T.S.I. Telecomunicación, UPM, Ciudad Universitaria, 28040 Madrid (Spain)

    2015-06-15

    Point defects in Ga- and Al-doped ZnO thin films are studied by means of first principles electronic structure calculations. Candidate defects are identified to explain recently observed differences in electrical and spectroscopic behavior of both systems. Substitutional doping in Ga–ZnO explain the metallic behavior of the electrical properties. Complexes of interstitial oxygen with substitutional Ga can behave as acceptor and cause partial compensation, as well as gap states below the conduction band minimum as observed in photoemission experiments. Zn vacancies can also act as compensating acceptors. On the other hand, the semiconducting behavior of Al–ZnO and the small variation in the optical gap compared with pure ZnO, can be explained by almost complete compensation between acceptor Zn vacancies and substitutional Al donors. Interstitial Al can also be donor levels and can be the origin of the small band observed in photoemission experiments below the Fermi level. Combinations of substitutional Al with interstitial oxygen can act simultaneously as compensating acceptor and generator of the mentioned photoemission band. The theoretical calculations have been done using density functional theory (DFT) within the generalized gradient approximation with on-site Coulomb interaction. In selected cases, DFT calculations with semilocal-exact exchange hybrid functionals have been performed. Results explain photoelectron spectra of Ga–ZnO and Al–ZnO at the corresponding doping levels. - Highlights: • Defects in Ga- and Al-heavy-doped ZnO films are studied by quantum calculations. • Defects compatible with electrical, optical, and HAXPES spectra are proposed. • Doping efficiency is reduced by Zn vacancies and O interstitials. • HAXPES bands near the Fermi level are induced by Al{sub i}, and complexes Ga{sub Zn}-O{sub i}, and Al{sub Zn}-O{sub i}.

  9. Origins of Highly Stable Al-evaporated Solution-processed ZnO Thin Film Transistors: Insights from Low Frequency and Random Telegraph Signal Noise

    Science.gov (United States)

    Kim, Joo Hyung; Kang, Tae Sung; Yang, Jung Yup; Hong, Jin Pyo

    2015-01-01

    One long-standing goal in the emerging field of flexible and transparent electronic devices is to meet the demand of key markets, such as enhanced output performance for metal oxide semiconductor thin film transistors (TFTs) prepared by a solution process. While solution-based fabrication techniques are cost-effective and ensure large-area coverage at low temperature, their utilization has the disadvantage of introducing large trap states into TFTs. Such states, the formation of which is induced by intrinsic defects initially produced during preparation, have a significant impact on electrical performance. Therefore, the ability to enhance the electrical characteristics of solution-processed TFTs, along with attaining a firm understanding of their physical nature, remains a key step towards extending their use. In this study, measurements of low-frequency noise and random telegraph signal noise are employed as generic alternative tools to examine the origins of enhanced output performance for solution-processed ZnO TFTs through the control of defect sites by Al evaporation. PMID:26525284

  10. Influence of the substrate and nitrogen amount on the microstructural and optical properties of thin r.f.-sputtered ZnO films treated by rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Nicolescu, Madalina [Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Anastasescu, Mihai, E-mail: manastasescu@icf.ro [Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Preda, S.; Stroescu, H.; Stoica, M. [Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Teodorescu, V.S. [National Institute of Material Physics, 105 bis Atomistilor Street, 077125 Bucharest-Magurele (Romania); Aperathitis, E.; Kampylafka, V. [FORTH-IESL, Crete (Greece); Modreanu, M. [Tyndall National Institute, University College Cork, Cork (Ireland); Zaharescu, M.; Gartner, M. [Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer ZnO:N films are crystallized in hexagonal wurtzite phase (XRD), (0 0 2) oriented. Black-Right-Pointing-Pointer The presence of the Nitrogen in the RTA films is confirmed by EDX and XPS. Black-Right-Pointing-Pointer All ZnO:N films are highly transparent (over 80%) in VIS to NIR spectral range. Black-Right-Pointing-Pointer The frequency of the phonon modes, E{sub 1}(TO) and A{sub 1}(LO), were obtained by IRSE. - Abstract: N-doped ZnO (ZnO:N) thin films, intended to be used as one of the layers in solar cell applications were deposited by r.f. sputtering, using ZnN target (99.9% purity), on silicon and fused silica substrates. In the gas flow composition, Ar was kept constant (50%) and the O{sub 2}/N{sub 2} ratio was varied as: 40%/10%, 25%/25% and 10%/40%. After deposition, rapid thermal annealing (RTA) at 400 and 550 Degree-Sign C for 1 min in N{sub 2} ambient has been performed. The RTA impact on the optical and microstructural properties of ZnO:N thin films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM) coupled with selected area electron diffraction (SAED) and energy dispersive X-ray spectroscopy (EDX), UV-vis-NIR spectroscopy, UV-vis-NIR spectroscopic ellipsometry (SE) and infrared ellipsometry (IR-SE). The as-deposited (ad) ZnO:N films are polycrystalline with preferentially oriented columnar crystals. After RTA we found ZnO:N films with improved crystallinity and fewer boundary defects. We report optical constants of ZnO:N from UV to IR spectral range as well as the infrared active phononic modes.

  11. On X-ray diffraction study of microstructure of ZnO thin nanocrystalline films with strong preferred grain orientation

    Czech Academy of Sciences Publication Activity Database

    Kužel, R.; Čížek, J.; Novotný, Michal

    44A, č. 1 (2013), s. 45-57 ISSN 1073-5623 R&D Projects: GA ČR(CZ) GAP108/11/0958 Institutional support: RVO:68378271 Keywords : zinc oxide thin film * X-ray diffraction * Mg0 * fused silica Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.730, year: 2013

  12. Electronic structure and phase stability during martensitic transformation in Al-doped ZrCu intermetallics

    International Nuclear Information System (INIS)

    Qiu Feng; Shen Ping; Liu Tao; Lin Qiaoli; Jiang Qichuan

    2010-01-01

    Martensitic transformation, phase stability and electronic structure of Al-doped ZrCu intermetallics were investigated by experiments and first-principles calculations using the pseudopotentials plane wave method. The formation energy calculations indicate that the stability of the ZrCu phase increases with the increasing Al content. Al plays a decisive role in controlling the formation and microstructures of the martensite phases in Zr-Cu-Al alloys. The total energy difference between ZrCu (B2) austenite and ZrCu martensite plays an important role in the martensitic transformation. The phase stability is dependent on its electronic structure. The densities of states (DOS) of the intermetallics were discussed in detail.

  13. Al-doped SnO2 nanocrystals from hydrothermal systems

    International Nuclear Information System (INIS)

    Jin Haiying; Xu Yaohua; Pang Guangsheng; Dong Wenjun; Wan Qiang; Sun Yan; Feng Shouhua

    2004-01-01

    Nanoparticles of Al-doped SnO 2 have been hydrothermally synthesized. The influences of the hydrothermal reaction time, the molar ratio of Sn/Al as well as the pH value of the solution have been studied. During the hydrothermal synthesis, the particle's core is rich in Sn and the surface is rich in Al. The Al-rich surface prevents the particles from further growing up either in the hydrothermal condition or during the calcination at 600 deg. C for a short period of time. The optimal hydrothermal synthesis condition of the nanoparticles is pH 5, Sn/Al=4:1 and 12 h at 160 deg. C. The products have been studied by XRD, TEM and 27 Al solid-state NMR

  14. Electron irradiation response on Ge and Al-doped SiO{sub 2} optical fibres

    Energy Technology Data Exchange (ETDEWEB)

    Yaakob, N.H.; Wagiran, H. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Hossain, I., E-mail: imamhossain@utm.m [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Ramli, A.T. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Bradley, D.A [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Hashim, S. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Ali, H. [Department of Radiotherapy and Oncology, Hospital Sultan Ismail, Johor Darul Takzim (Malaysia)

    2011-05-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO{sub 2} optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO{sub 2} optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  15. Electron irradiation response on Ge and Al-doped SiO 2 optical fibres

    Science.gov (United States)

    Yaakob, N. H.; Wagiran, H.; Hossain, I.; Ramli, A. T.; Bradley, D. A.; Hashim, S.; Ali, H.

    2011-05-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  16. Electron irradiation response on Ge and Al-doped SiO2 optical fibres

    International Nuclear Information System (INIS)

    Yaakob, N.H.; Wagiran, H.; Hossain, I.; Ramli, A.T.; Bradley, D.A; Hashim, S.; Ali, H.

    2011-01-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  17. Effect of disorder on carrier transport in ZnO thin films grown by atomic layer deposition at different temperatures

    Science.gov (United States)

    Saha, D.; Das, Amit. K.; Ajimsha, R. S.; Misra, P.; Kukreja, L. M.

    2013-07-01

    We have grown ˜200 nm thick ZnO films on (0001) sapphire substrates using atomic layer deposition at different substrate temperatures ranging from ˜150 to 350 °C. X-ray diffraction and photoluminescence spectra of these films showed that crystalline and compositional native defects were strongly dependent on the substrate temperature. Room temperature Hall measurement showed that all the films were degenerate with carrier concentration exceeding the Mott's critical density nc required for metallic conduction. The lowest value of room temperature resistivity ˜3.6 × 10-3 Ω cm was achieved for the film deposited at ˜200 °C, which had an estimated carrier concentration ˜5.7 × 1019 cm-3 and mobility ˜30 cm2/V s. The films deposited both below and above ˜200 °C showed increased resistivity and decreased mobility presumably due to the intensified defects and deteriorated crystalline quality of these films. To investigate the effect of disorder on the underlying charge transport mechanisms in these films, the electrical resistivity was measured in the temperature range of ˜4.2 to 300 K. The films grown at ˜150, 300, and 350 °C were found to be semiconducting in the entire range of the measurement temperature due to the intensified disorder which impeded the metallic transport in these films. However, the films grown at ˜200 and 250 °C showed a transition from metallic to semiconducting transport behaviour at lower temperatures due to the reduced defects and improved crystalline quality of these films. The observed semiconducting behaviour below the transition temperature for these films could be well explained by considering quantum corrections to the Boltzmann conductivity which includes the effect of disorder induced weak localization and coulomb electron-electron interactions.

  18. Study of sputtered ZnO thin films on SiO2 and GaP substrates

    International Nuclear Information System (INIS)

    Brath, T.; Buc, D.; Kovac, J.; Hrnciar, V.; Caplovic, L.

    2011-01-01

    We have investigated n-ZnO polycrystalline thin films prepared on SiO 2 and p-GaP substrate using magnetron sputtering technique. The structural and electrical properties of these structures were studied. The measured parameters give promising results with a possibility to utilize n-ZnO/p-GaP heterostructure for application in the solar cells development especially in the field of nanostructures. The prepared structures will be a subject of further research. (authors)

  19. Oxygen deficiency effects on recombination lifetime and photoluminescence characteristics of ZnO thin films; correlation with crystal structure

    Energy Technology Data Exchange (ETDEWEB)

    Guer, Emre; Tuezemen, S. [Ataturk University, Art and Science Faculty, Physics Department, Erzurum (Turkey); Meral, Kadem; Onganer, Y. [Ataturk University, Art and Science Faculty, Chemistry Department, Erzurum (Turkey)

    2009-03-15

    The photoluminescence (PL), recombination lifetime (RL), and X-ray diffraction (XRD) spectra of the samples grown at various O{sub 2} fractions of 0.290 (Zn-rich), 0.585 (moderate), and 0.836 (O-rich) over the total pressures in the growth chamber were investigated. XRD measurements revealed that all the films show highly preferred (0002) orientation. The PL measurements exhibit different dominant emissions in the ultraviolet (UV), violet and blue regions for Zn-rich, moderate and O-rich samples, respectively. Well-known green emission and high intensity of free exciton (FX) transition has been observed in Zn-rich sample after the sample is annealed at vacuum probably due to the oxygen deficiencies. Annealing the moderate sample gives rise to the UV emission at energy of 3.263 eV similar to the observed PL emission spectrum for the Zn-rich thin film. O-rich thin film exhibits a 338 meV acceptor level above the valance band maximum, most probably related to zinc vacancy (V{sub Zn}). Free exciton RL measurements result in 568.23, 397.65, and 797.46 ps for Zn-rich, moderate, and O-rich thin films, respectively. A good correlation was found between crystallite size and the lifetime values. (orig.)

  20. Comparative study of Co, Cr and Al-doped LiMnO2 prepared by ion ...

    Indian Academy of Sciences (India)

    The Co, Cr and Al-doped LiMnO2 powders were prepared by ion exchange. Phase identification, surface morphology and electrochemical properties were studied by X-ray diffraction, scanning electron microscopy and galvanostatic charge–discharge experiments. The results show that the doped LiMnO2 keeps the ...

  1. Development of Boron-Doped ZnO Films with Novel Thin Zn-Rich Film and Their Application to Solar Cells

    Science.gov (United States)

    Hongsingthong, Aswin; Wada, Hidetoshi; Moriya, Yuki; Sichanugrist, Porponth; Konagai, Makoto

    2012-10-01

    In this paper, we report newly developed high-haze glass/zinc oxide (ZnO) substrates with low resistivity by a combination of unique etched soda-lime glass and bilayered ZnO films with a Zn-rich (oxygen-poor) layer. The high mobility and low resistivity of bilayered ZnO films could be obtained with Zn-rich conditions. By depositing the ZnO films onto textured glass substrates, the obtained films exhibit an excellent light-scattering property, while their electrical property is still good. Furthermore, the bilayered ZnO films with a Zn-rich layer did not negatively affect the transparency of the films. Employing the bilayered ZnO films with a Zn-rich layer and an rms roughness of about 274 nm as the front transparent conductive oxide (TCO) in hydrogenated amorphous silicon (a-Si:H) solar cells, we improved the performance and quantum efficiency (QE) of the fabricated solar cells, particularly in the short-wavelength region without the deterioration of open-circuit voltage or fill factor. Thus, the developed glass/bilayered ZnO film with a Zn-rich layer is a new promising material since its resistivity is low while its light-scattering property is still high.

  2. Superhydrophobic and anti-reflective ZnO nanorod-coated FTO transparent conductive thin films prepared by a three-step method

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bao-jia, E-mail: li_bjia@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang, 212013 (China); Huang, Li-jing; Ren, Nai-fei [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang, 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang, 212013 (China); Kong, Xia; Cai, Yun-long; Zhang, Jie-lu [Jiangsu Tailong Reduction Box Co. Ltd., Taixing, 225400 (China)

    2016-07-25

    A ZnO nanorod-coated FTO film was prepared by sputtering an AZO layer on FTO glass, thermal annealing of the AZO/FTO film, and hydrothermal growth of ZnO nanorods at 70 °C on the annealed AZO/FTO film using zinc foils as zinc source. Two other ZnO nanorod-coated FTO films were also prepared by hydrothermal growths of ZnO nanorods on the FTO glass and the unannealed AZO/FTO film respectively for comparison purpose. The results were observed in detail using X-ray diffraction, scanning electron microscopy, water contact/sliding angle measurement, spectrophotometry and four-point probe measurement. The ZnO nanorods on the annealed AZO/FTO film were found to exhibit denser distribution and better orientation than those on the FTO glass and the unannealed AZO/FTO film. As a result, the ZnO nanorod-coated annealed AZO/FTO film demonstrated superhydrophobicity, high transparency and low reflectance in the visible range. Also this film had the lowest sheet resistance of 4.0 Ω/sq, implying its good electrical conductivity. This investigation provides a valuable reference for developing multifunctional transparent conductive films. - Highlights: • ZnO nanorod-coated annealed AZO/FTO film was obtained by a three-step method. • FTO and unannealed AZO/FTO films were also used as substrates for comparison. • ZnO nanorods on the annealed AZO/FTO film were denser and more vertically-oriented. • The ZnO nanorod-coated annealed AZO/FTO film (Z/TA-FTO) had superhydrophobicity. • The Z/TA-FTO exhibited high transparency, low reflectance and good conductivity.

  3. Effect of boric acid composition on the properties of ZnO thin film nanotubes and the performance of dye-sensitized solar cell (DSSC)

    Energy Technology Data Exchange (ETDEWEB)

    Rahman, M.Y.A., E-mail: mohd.yusri@ukm.edu.my; Roza, L.; Umar, A.A., E-mail: akrajas@ukm.edu.my; Salleh, M.M.

    2015-11-05

    The effect of boric acid (H{sub 3}BO{sub 3}) composition at constant concentration of hexamethylenetetramine (HMT) and zinc nitrate (Zn(NO{sub 3}){sub 2}) on the morphology, thickness, elemental composition, optical absorption, structure, photoluminescence of ZnO nanotubes has been investigated. The performance of the DSSC utilizing the ZnO samples has also been studied. It was found that the structure, thickness, elemental composition, optical absorption and morphology of ZnO nanostructure are significantly affected by the concentration of H{sub 3}BO{sub 3}. The diameter and thickness of ZnO nanotubes decreases as the composition of H{sub 3}BO{sub 3} increases. The DSSC utilizing ZnO nanotubes synthesized at 2 wt. % H{sub 3}BO{sub 3} performs the highest J{sub SC} and η of 2.67 mA cm{sup −2} and 0.29%, respectively. The highest performance of the device is due to the highest optical absorption of ZnO nanotubes sample and lowest charge interfacial resistance. - Graphical abstract: Nyquist plots of the DSSCs utilizing ZnO nanotubes prepared at various boric acid compositions. - Highlights: • Boron was doped into ZnO films by adding H{sub 3}BO{sub 3} into the growth solution. • Diameter and thickness of ZnO nanotubes decreases with the composition of H{sub 3}BO{sub 3}. • The DSSC performs the highest J{sub SC} and η of 2.67 mA cm{sup −2} and 0.29%, respectively. • This is due to high specific surface area and low charge interfacial resistance.

  4. Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

    Directory of Open Access Journals (Sweden)

    Park Byoungjun

    2011-01-01

    Full Text Available Abstract Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm2/V·s and their on/off ratio was in the range of 104–105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

  5. On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation

    Science.gov (United States)

    Schmidt, Matthias; Wenckstern, Holger von; Pickenhain, Rainer; Grundmann, Marius

    2012-09-01

    Electronic defect states in a n-type conducting zinc oxide thin film sample were investigated by means of space charge spectroscopy focussing on levels in the midgap region as well as on hole traps. To overcome the experimental difficulties arising from the wide bandgap and the lack of p-type conduction, optical excitation was employed to measure the emission of trapped charge carriers from these levels. Therefore - besides deep-level transient spectroscopy measurements - photo-capacitance, optically chopped photo-current, minority carrier transient spectroscopy, and optical capacitance-voltage experiments were conducted. In doing so, a midgap level labelled T4, and hole traps labelled TH1 and TH2 were detected. In the case of T4 and TH1 the photo-ionisation cross-section spectra were determined.

  6. Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

    KAUST Repository

    Roqan, Iman S.

    2015-02-21

    We demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline GdxZn1-xO thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μB per Gd atom) at room temperature. While films deposited at higher oxygen pressure do not exhibit FM, FM is recovered by post-annealing these films under vacuum. These findings reveal the contribution of oxygen deficiency defects to the long-range FM. We demonstrate the possible FM mechanisms, which are confirmed by density functional theory study, and show that Gd dopants are essential for establishing FM that is induced by intrinsic defects in these films.

  7. Experiment and prediction on thermal conductivity of Al2O3/ZnO ...

    Indian Academy of Sciences (India)

    We predict that there is a critical value of Al2O3/ZnO nano thin interface thickness based on two assumptions according to an interesting phenomenon, which the thermal conductivity (TC) trend of Al2O3/ZnO nano thin interface is consistent with that of relevant single nano thin interface when the nano thin interface thickness ...

  8. Experiment and prediction on thermal conductivity of Al2O3/ZnO ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. We predict that there is a critical value of Al2O3/ZnO nano thin interface thickness based on two assumptions according to an interesting phenomenon, which the thermal conductivity (TC) trend of. Al2O3/ZnO nano thin interface is consistent with that of relevant single nano thin interface when the nano thin interface ...

  9. Experiment and prediction on thermal conductivity of Al 2 O 3 /ZnO ...

    Indian Academy of Sciences (India)

    We predict that there is a critical value of Al2O3/ZnO nano thin interface thickness based on two assumptions according to an interesting phenomenon, which the thermal conductivity (TC) trend of Al2O3/ZnO nano thin interface is consistent with that of relevant single nano thin interface when the nano thin interface thickness ...

  10. PMMA–SiO{sub 2} hybrid films as gate dielectric for ZnO based thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Acosta, M.D. [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro, Apdo. Postal 1-798, Querétaro, Qro. 76001 (Mexico); Quevedo-López, M.A. [Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75083 (United States); Ramírez-Bon, R., E-mail: rrbon@qro.cinvestav.mx [Centro de Investigación y de Estudios Avanzados del IPN, Unidad Querétaro, Apdo. Postal 1-798, Querétaro, Qro. 76001 (Mexico)

    2014-08-01

    In this paper we report a low temperature sol–gel deposition process of PMMA–SiO{sub 2} hybrid films, with variable dielectric properties depending on the composition of the precursor solution, for applications to gate dielectric layers in field-effect thin film transistors (FE-TFT). The hybrid layers were processed by a modified sol–gel route using as precursors Tetraethyl orthosilicate (TEOS) and Methyl methacrylate (MMA), and 3-(Trimethoxysilyl)propyl methacrylate (TMSPM) as the coupling agent. Three types of hybrid films were processed with molar ratios of the precursors in the initial solution 1.0: 0.25, 0.50, 0.75: 1.0 for TEOS: TMSPM: MMA, respectively. The hybrid films were deposited by spin coating of the hybrid precursor solutions onto p-type Si (100) substrates and heat-treated at 90 °C for 24 h. The chemical bonding in the hybrid films was analyzed by Fourier Transform Infrared Spectroscopy to confirm their hybrid nature. The refractive index of the hybrid films as a function of the TMSPM coupling agent concentration, were determined from a simultaneous analysis of optical reflectance and spectroscopic ellipsometry experimental data. The PMMA–SiO{sub 2} hybrid films were studied as dielectric films using metal-insulator-metal structures. Capacitance–Voltage (C–V) and current–voltage (I–V) electrical methods were used to extract the dielectric properties of the different hybrid layers. The three types of hybrid films were tested as gate dielectric layers in thin film transistors with structure ZnO/PMMA–SiO{sub 2}/p-Si with a common bottom gate and patterned Al source/drain contacts, with different channel lengths. We analyzed the output electrical responses of the ZnO-based TFTs to determine their performance parameters as a function of channel length and hybrid gate dielectric layer. - Highlights: • PMMA–SiO{sub 2} hybrid films as dielectric material synthesized by sol–gel process at low temperature. • PMMA–SiO{sub 2

  11. Fast Classification of Meat Spoilage Markers Using Nanostructured ZnO Thin Films and Unsupervised Feature Learning

    Directory of Open Access Journals (Sweden)

    John Bosco Balaguru Rayappan

    2013-01-01

    Full Text Available This paper investigates a rapid and accurate detection system for spoilage in meat. We use unsupervised feature learning techniques (stacked restricted Boltzmann machines and auto-encoders that consider only the transient response from undoped zinc oxide, manganese-doped zinc oxide, and fluorine-doped zinc oxide in order to classify three categories: the type of thin film that is used, the type of gas, and the approximate ppm-level of the gas. These models mainly offer the advantage that features are learned from data instead of being hand-designed. We compare our results to a feature-based approach using samples with various ppm level of ethanol and trimethylamine (TMA that are good markers for meat spoilage. The result is that deep networks give a better and faster classification than the feature-based approach, and we thus conclude that the fine-tuning of our deep models are more efficient for this kind of multi-label classification task.

  12. Enhancement of hole-injection and power efficiency of organic light emitting devices using an ultra-thin ZnO buffer layer

    International Nuclear Information System (INIS)

    Huang, H.-H.; Chu, S.-Y.; Kao, P.-C.; Chen, Y.-C.; Yang, M.-R.; Tseng, Z.-L.

    2009-01-01

    The advantages of using an anode buffer layer of ZnO on the electro-optical properties of organic light emitting devices (OLEDs) are reported. ZnO powders were thermal-evaporated and then treated with ultra-violet (UV) ozone exposure to make the ZnO layers. The turn-on voltage of OLEDs decreased from 4 V (4.2 cd/m 2 ) to 3 V (3.4 cd/m 2 ) and the power efficiency increased from 2.7 lm/W to 4.7 lm/W when a 1-nm-thick ZnO layer was inserted between indium tin oxide (ITO) anodes and α-naphthylphenylbiphenyl diamine (NPB) hole-transporting layers. X-ray and ultra-violet photoelectron spectroscopy (XPS and UPS) results revealed the formation of the ZnO layer and showed that the work function increased by 0.59 eV when the ZnO/ITO layer was treated by UV-ozone for 20 min. The surface of the ZnO/ITO film became smoother than that of bare ITO film after the UV-ozone treatment. Thus, the hole-injection energy barrier was lowered by inserting an ZnO buffer layer, resulting in a decrease of the turn-on voltage and an increase of the power efficiency of OLEDs.

  13. Properties of low-temperature deposited ZnO thin films prepared by cathodic vacuum arc technology on different flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Cheng-Tang [Department of Mechanical and Electron-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung City 804, Taiwan (China); Yang, Ru-Yuan, E-mail: ryyang@mail.npust.edu.tw [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, Pingtung County 912, Taiwan (China); Weng, Min-Hang [Medical Devices and Opto-Electronics Equipment Department, Metal Industries Research and Development Center, Kaohsiung City 821, Taiwan (China); Huang, Chien-Wei [Department of Mechanical and Electron-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung City 804, Taiwan (China)

    2013-07-31

    Un-doped zinc oxide (ZnO) films were deposited on three different substrates (polyethylene terephthalate (PET), polyvinyl butyral (PVB) and polyimide (PI)) at a low temperature (< 75 °C) by cathode vacuum arc deposition. The microstructure, optical and electrical properties of the deposited films were investigated and discussed. All the deposited films reveal a preferred orientation with the c-axis perpendicular to the substrate, and an average transmittance of over 85% in the visible region. The calculated optical band gaps are around 2.6, 3.14 and 3.18 eV, respectively, for the ZnO films deposited on the PI, PVB and PET substrates. The lowest resistivity and the highest Hall mobility are 5.31 × 10{sup −3} Ω-cm and 15.16 cm{sup 2}/V-s for the ZnO film deposited on the PET substrate. - Highlights: • Polyethylene terephthalate, polyvinyl butyral and polyimide were used as substrates. • ZnO films were prepared by cathodic arc plasma deposition. • ZnO films have different properties due to different substrates. • The microstructure control of ZnO film on polymer substrate is important.

  14. Trajectory effect on the properties of large area ZnO thin films deposited by atmospheric pressure plasma jet

    International Nuclear Information System (INIS)

    Juang, Jia-Yang; Chou, Tung-Sheng; Lin, Hsin-Tien; Chou, Yuan-Fang; Weng, Chih-Chiang

    2014-01-01

    Highlights: • We develop a cost-effective technique, atmosphere pressure plasma jet (APPJ), to deposit gallium-doped zinc oxide (GZO) films on large area glass substrates in atmosphere. • Scanning trajectory has a significant impact on the pattern of sheet resistance distribution. • The primary root cause of the nonuniformity is the annealing effect of the deposited films in air while the nozzle scans over the rest of the substrate. • Equivalent circuits models considering only the resistance increase due to air annealing cannot explain the unexpected rise of resistance in the center of the substrate for multiple-pass samples. • Measurements of residual stress, carrier concentration and Hall mobility reveal that the residual stress is another factor that results in nonuniform resistance distribution. - Abstract: Large area (117 mm × 185 mm) gallium-doped zinc oxide (GZO) films are prepared on glass substrates by atmospheric pressure plasma jet (APPJ) technique. The uniformity of material properties, in particular the electrical resistivity, of the deposited film is of great importance in reducing design complexity of the electron devices. We investigate the effects of scanning trajectory recipe (speed, pitch and number of passes) on structural and electrical properties of GZO thin films. We find that the trajectory has significant effects on the magnitude and uniformity of sheet resistance over the glass substrates. For single pass, the resistance appears higher at the starting part of spray, whereas, for cases of multiple passes, the highest resistance appears in the central part of the substrate. XRD, SEM, Hall measurement and residual stress are used to study the film properties and identify root causes of the nonuniform distribution of sheet resistance. We conclude that annealing time is the dominant root cause of the nonuniform resistance distribution, and other factors such as residual stress and structural characteristics may also have

  15. High-Performance Spray-Deposited Indium Doped ZnO Thin Film: Structural, Morphological, Electrical, Optical, and Photoluminescence Study

    Science.gov (United States)

    Asl, Hassan Zare; Rozati, Seyed Mohammad

    2018-03-01

    In this study, high-quality indium doped zinc oxide thin films were deposited using the spray pyrolysis technique, and the substrate temperature varied from 450°C to 550°C with steps of 25°C with the aim of investigating the effect of substrate temperature. It was found that as the temperature increased, the resistivity of the films decreased to the extent that it was as low as 5.34 × 10-3 Ω cm for the one deposited at 500°C; however, it slightly increased for the resulting film at 550°C. Although the carrier concentration mostly increased with temperature, it appeared that the carrier mobility was the parameter mainly governing the conductivity variation. In addition, the average transparency of the deposited films at 500°C, 525°C and 550°C was around 87% (400-800 nm), which makes them outstanding transparent conductive oxide films. Moreover, the crystallite size and strain of the resulting films were estimated via the Williamson-Hall method. The results revealed a considerable reduction in the crystallite size and strain up to 500°C followed by a rise at higher substrate temperature. Based on both the surface and cross-section field emission scanning electron microscope images, the film resulting at 500°C was highly compacted and crack free, which can explain the enlargement of the carrier mobility (10.9 cm2 V-1 s-1) in this film. Finally, a detailed photoluminescence study revealed several peaks in the spectrum and the variation of the two major peaks appeared to have correlation with the carrier concentration.

  16. Pressure controlled tunable magnetic, electrical and optical properties of (Cu, Li)-codoped ZnO thin films

    Science.gov (United States)

    Zhang, Liqiang; Lu, Bin; Ye, Zhizhen; Lu, Jianguo; Huang, Jingyun

    2013-09-01

    Zn0.989Cu0.01Li0.001O thin films have been deposited on c-plane sapphire substrates by pulsed laser deposition (PLD). The films deposited at 500 °C and the oxygen pressures (PO2) ranging from 0.04 to 40 Pa were of good crystallinity with a (0002) preferential orientation. Three conductivity regimes were observed for the films with varying the PO2. The n-type film obtained at 0.04 Pa had a low resistivity of 1.95×10-2 Ω cm, Hall mobility of 14.8 cm2 V-1 s-1, and carrier concentration of 2.16×1019 cm-3. The p-type Zn0.989Cu0.01Li0.001O film could achieve when oxygen ambient reached as high as 40 Pa and with a hole concentration of 1.12×1018 cm-3. Films grown at PO2 between 0.4 and 4 Pa commonly exhibited insulating behavior. All the Zn0.989Cu0.01Li0.001O films had a high transmittance above 80% in visible regions and the red-shift in optical band gap (Eg) happened as the PO2 increased. Magnetic measurements showed that only the film fabricated at 0.04 Pa with n-type conduction exhibited room temperature ferromagnetism (RTFM) of 0.25μB/Cu while others obtained at higher PO2 were paramagnetic. Oxygen vacancies (VO) are speculated that would play a crucial role for the ferromagnetic behavior observed.

  17. Magnetic and optical properties of Al-doped anatase TiO2 (101) surface from density functional theory

    International Nuclear Information System (INIS)

    Yu, Dandan; Zhou, Wei; Liu, Yanyu; Wu, Ping

    2016-01-01

    The effects of Al-doping on the magnetic and optical properties of anatase TiO 2 (101) surface have been investigated with LDA+U calculations. The incorporation of Al atom induces a total magnetic moment of 1.00 μ B , which mainly originates from the hole in 2p orbital of the oxygen atom. The room-temperature ferromagnetism (RTFM) of doping on the surface is more stabilized than that of doping in bulk by the hole-mediated double exchange between the nearest neighbor O atoms. Besides, it is shown that the excess electron associated with the oxygen vacancy can be captured by the nearest Ti ion, which reduces the Ti 4+ –Ti 3+ with a spin magnetic moment of 1.00 μ B . The existence of oxygen vacancy changes the magnetic mechanism from hole-mediated to electron-mediated. Additionally, the impurity states introduced by Al doping are conducive to enhancing the visible light absorption. - Highlights: • Magnetic and optical properties of Al-doped TiO 2 (101) surface were investigated. • The ferromagnetism is driven by the hole-mediated double exchange between O atoms. • The room-temperature ferromagnetism of doped surface is more stabilized than bulk. • The existence of oxygen vacancy will change the magnetic mechanism. • The incorporation of Al can lead to the red shift of absorption edge.

  18. Efficient light incoupling into silicon thin-film solar cells by anti-reflecting MgO/high-compact-AZO with air-side textured glass

    International Nuclear Information System (INIS)

    Kang, Dong-Won; Han, Min-Koo; Lee, Heon-Min

    2013-01-01

    Light incoupling effects have been enhanced at front interfaces of silicon (Si) thin-film solar cells. Firstly, a MgO thin film was introduced at glass substrate/Al-doped ZnO (AZO) interface for anti-reflection effect. We additionally found that the surface morphology of AZO films grown on MgO film after texture-etching is dependent on the compactness of AZO. For high-compact AZO films, the texture-etched MgO/AZO double layer exhibited significantly enhanced light-scattering capability. Secondly, we made textured surfaces at air/glass interface through simple plasma-etching without sacrificial layers or masks by optimizing the etching pressure. The additional air-side texture contributed to further improvement of total light scattering from the MgO/AZO-coated glass substrate. Fabricated microcrystalline Si thin-film solar cells employing the MgO coated glass with air-side surface texture showed decreased cell reflectance and increased quantum efficiency. The J sc increased from 21.7 to 26.5 mA cm −2 and final efficiency of 9.49% was achieved. Based on our experimental results, the suggested structure, the MgO coating on glass substrate of which air-side surface is texture-etched, can offer a promising approach to improve the light incoupling and efficiency of Si thin-film solar cells. (paper)

  19. ZnO Films with Very High Haze Value for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells

    Science.gov (United States)

    Hongsingthong, Aswin; Krajangsang, Taweewat; Afdi Yunaz, Ihsanul; Miyajima, Shinsuke; Konagai, Makoto

    2010-05-01

    We successfully increased the haze value of zinc oxide (ZnO) films fabricated using metal-organic chemical vapor deposition (MOCVD) by conducting glass-substrate etching before film deposition. It was found that with increasing the glass treatment time, the surface morphology of ZnO films changed from conventional pyramid-like single texture to greater cauliflower-like multi texture. Further, the rms roughness and the haze value of the films increased remarkably. Using ZnO films with a high haze value as front transparent conductive oxide (TCO) films in hydrogenated microcrystalline silicon (µc-Si:H) solar cells, we improved the quantum efficiency of these cells particularly in the long-wavelength region.

  20. ZnO nanocrystals and allied materials

    CERN Document Server

    Okada, Tatsuo

    2014-01-01

    ZnO has been the central theme of research in the past decade due to its various applications in band gap engineering, and textile and biomedical industries. In nanostructured form, it offers ample opportunities to realize tunable optical and optoelectronic properties and it was also termed as a potential material to realize room temperature ferromagnetism. This book presents 17 high-quality contributory chapters on ZnO related systems written by experts in this field. These chapters will help researchers to understand and explore the varied physical properties to envisage device applications of ZnO in thin film, heterostructure and nanostructure forms.

  1. Al-Doped Ni2P nanosheet array: a superior and durable electrocatalyst for alkaline hydrogen evolution.

    Science.gov (United States)

    Du, Huitong; Xia, Lian; Zhu, Shuyun; Qu, Fei; Qu, Fengli

    2018-03-15

    It is highly desired to develop high-efficiency and low-cost catalysts for the hydrogen evolution reaction (HER). Herein, we report the development of an Al-doped Ni 2 P nanosheet array on Ti mesh as a high-performance and durable electrocatalyst for the HER in 1.0 M KOH. Such a catalyst demands an overpotential of 129 mV to afford 10 mA cm -2 and maintains its catalytic activity for at least 20 h. This work offers us a promising cost-effective catalyst for large-scale electrolytic production of hydrogen fuels.

  2. Liquid Phase Epitaxial Growth of Al-doped f-SiC for White Light-Emitting Diodes

    DEFF Research Database (Denmark)

    Tang, Kai; Ma, Xiang; can der Eijk, Casper

    , the technological equipment required for LPE is relatively inexpensive. The fundamental backgrounds for LPE growth of Al-doped 6H-SiC are first introduced and elaborated by new thermodynamic and crystal growth models. Based on theoretical analyses, the new designed experimental apparatus is then constructed....... The experimental results are presented and discussed. Since operational temperature of LPE growth is much lower than that currently used in physical vapour transport (PVT) process, it is expected to save the energy consumption for SiC crystal growth....

  3. Influence of substrate temperature and oxygen/argon flow ratio on the electrical and optical properties of Ga-doped ZnO thin films prepared by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sookjoo; Jeon, Jinho; Kim, Hyoun Woo; Lee, Chongmu [Department of Materials Science and Engineering, Inha University, Incheon, 402-751 (Korea); Lee, Jae Gab [School of Advanced Materials Engeneering, Kukmin University, Seoul 136-702 (Korea)

    2006-12-15

    Effects of substrate temperature and atmosphere on the electrical and optical properties of Ga-doped ZnO thin films deposited by rf magnetron sputtering were investigated. The electrical resistivity of Ga-doped ZnO (GZO) films decreases as the substrate temperature increases from room temperature to 300 C. A minimum resistivity of 3.3 x 10{sup -4} {omega}cm is obtained at 300 C and then the resistivity increases with a further increase in the substrate temperature to 400 C. This change in resistivity with the substrate temperature is related to the crystallinity of the GZO film. The resistivity nearly does not change with the O{sub 2}/Ar flow ratio, R for R<0.25 but increases rapidly with R for R>0.25. This change in resistivity with R is also related to crystallinity. The crystallinity is enhanced as R increases, but if the oxygen partial pressure is higher than a certain level (R=0.25{+-}0.10) gallium oxides precipitate at grain boundaries, which decrease both carrier concentration and mobility. Optical transmittance increases as R increases for R<0.75. This change in transmittance with R is related to changes in oxygen vacancy concentration and surface roughness with R. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Electrical, optical, and structural properties of thin films with tri-layers of AZO/ZnMgO/AZO grown by filtered vacuum arc deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gontijo, Leonardo C. [Instituto Federal do Espirito Santo, Programa de Pos-Graduacao em Engenharia Metalurgica e de Materiais, CEP 29444-030 Vitoria, ES (Brazil); Cunha, Alfredo G. [Universidade Federal do Espirito Santo, Departamento de Fisica, CEP 29075-910 Vitoria, ES (Brazil); Nascente, Pedro A.P., E-mail: nascente@ufscar.br [Universidade Federal de Sao Carlos, Departamento de Engenharia de Materiais, CEP 13565-905 Sao Carlos, SP (Brazil)

    2012-12-01

    Highlights: Black-Right-Pointing-Pointer AZO/ZnMgO/AZO tri-layered films were grown by FCAD filtered cathodic arc deposition. Black-Right-Pointing-Pointer The films were highly transparent and presented excellent electrical resistivity. Black-Right-Pointing-Pointer The films presented optical transmittance in the visible light higher than 80%. - Abstract: Transparent conductive oxides (TCO) are indispensable as front electrode for most of thin film electronic devices such as transparent electrodes for flat panel displays, photovoltaic cells, windshield defrosters, transparent thin film transistors, and low emissivity windows. Thin films of aluminum-doped zinc oxide (AZO) have shown to be one of the most promising TCOs. In this study, three layered Al-doped ZnO (AZO)/ZnMgO/AZO heterostructures were prepared by filtered cathodic arc deposition (FCAD) on glass substrates. The objective is to find a set of parameters that will allow for improved optical and electrical properties of the films such as low resistivity, high mobility, high number of charge carriers, and high transmittance. We have investigated the effect of modifications in thickness and doping of the ZnMgO inner layer on the structural, electrical, and optical characteristics of the stacked heterostructures.

  5. Highly conductive epitaxial ZnO layers deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Baji, Zs., E-mail: baji.zsofia@ttk.mta.hu [Research Centre for Natural Sciences Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary); Lábadi, Z.; Molnár, Gy.; Pécz, B. [Research Centre for Natural Sciences Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary); Vad, K. [Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), P.O. Box 51, H-4001, Debrecen (Hungary); Horváth, Z.E. [Research Centre for Natural Sciences Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary); Szabó, P.J. [Budapest University of Technology and Economics, Műegyetem rkp. 3-9. H-1111 Budapest (Hungary); Nagata, T. [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Volk, J. [Research Centre for Natural Sciences Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary)

    2014-07-01

    The possibility of depositing conductive epitaxial layers with atomic layer deposition has been examined. Epitaxial ZnO layers were grown on GaN and doped with Al. The resistivity of the epitaxial layers is between 0.6 and 2 * 10{sup −4} Ω cm with both the mobilities and the carrier concentrations being very high. The source of the high carrier concentration was found to be a combination of Al and Ga doping, the latter resulted by Ga atoms diffusing into the ZnO from the GaN substrate. - Highlights: • High-quality epitaxial ZnO layers were deposited with ALD on GaN above 270 °C. • In the Al-doped layers, domains with different orientations also appear. • Lower-temperature epitaxy is possible with an epitaxial seed layer. • The conductivity of the epitaxial layers is between 0.6 and 2 * 10{sup −4} Ω cm. • The high carrier concentration is resulted by the Ga and Al doping.

  6. Multi-wavelength Raman scattering of nanostructured Al-doped zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Russo, V.; Ghidelli, M.; Gondoni, P. [Dipartimento di Energia and NEMAS, Center for Nanoengineered Materials and Surfaces, Politecnico di Milano, via Ponzio 34/3, I-20133 Milano (Italy); Casari, C. S.; Li Bassi, A. [Dipartimento di Energia and NEMAS, Center for Nanoengineered Materials and Surfaces, Politecnico di Milano, via Ponzio 34/3, I-20133 Milano (Italy); Center for Nano Science and Technology PoliMI, Istituto Italiano di Tecnologia, Via Pascoli 70/3, I-20133 Milano (Italy)

    2014-02-21

    In this work we present a detailed Raman scattering investigation of zinc oxide and aluminum-doped zinc oxide (AZO) films characterized by a variety of nanoscale structures and morphologies and synthesized by pulsed laser deposition under different oxygen pressure conditions. The comparison of Raman spectra for pure ZnO and AZO films with similar morphology at the nano/mesoscale allows to investigate the relation between Raman features (peak or band positions, width, relative intensity) and material properties such as local structural order, stoichiometry, and doping. Moreover Raman measurements with three different excitation lines (532, 457, and 325 nm) point out a strong correlation between vibrational and electronic properties. This observation confirms the relevance of a multi-wavelength Raman investigation to obtain a complete structural characterization of advanced doped oxide materials.

  7. Manufacturing of patterned ZnO films with application for ...

    Indian Academy of Sciences (India)

    Patterned thin films, ZnO, are successfully prepared on glass substrates by the sol–gel method using dip-coating technique. The films, formed of ZnO nanocrystallites with hexagonal crystal structure, are characterized by means of scanning electron microscopy, Fourier transform infrared spectroscopy and X-ray diffraction.

  8. Manufacturing of patterned ZnO films with application for ...

    Indian Academy of Sciences (India)

    Administrator

    Faculty of Chemistry, University of Sofia, 1 James Bourchier Blvd., 1164 Sofia, Bulgaria. MS received 30 December 2008; revised 11 July 2009. Abstract. Patterned thin films, ZnO, are successfully prepared on glass substrates by the sol–gel method using dip-coating technique. The films, formed of ZnO nanocrystallites with ...

  9. Low-temperature preparation of rutile-type TiO2 thin films for optical coatings by aluminum doping

    Science.gov (United States)

    Ishii, Akihiro; Kobayashi, Kosei; Oikawa, Itaru; Kamegawa, Atsunori; Imura, Masaaki; Kanai, Toshimasa; Takamura, Hitoshi

    2017-08-01

    A rutile-type TiO2 thin film with a high refractive index (n), a low extinction coefficient (k) and small surface roughness (Ra) is required for use in a variety of optical coatings to improve the controllability of the reflection spectrum. In this study, Al-doped TiO2 thin films were prepared by pulsed laser deposition, and the effects of Al doping on their phases, optical properties, surface roughness and nanoscale microstructure, including Al distribution, were investigated. By doping 5 and 10 mol%Al, rutile-type TiO2 was successfully prepared under a PO2 of 0.5 Pa at 350-600 °C. The nanoscale phase separation in the Al-doped TiO2 thin films plays an important role in the formation of the rutile phase. The 10 mol%Al-doped rutile-type TiO2 thin film deposited at 350 °C showed excellent optical properties of n ≈ 3.05, k ≈ 0.01 (at λ = 400 nm) and negligible surface roughness, at Ra ≈ 0.8 nm. The advantages of the superior optical properties and small surface roughness of the 10 mol%Al-doped TiO2 thin film were confirmed by fabricating a ten-layered dielectric mirror.

  10. ZnO nanorods/AZO photoanode for perovskite solar cells fabricated in ambient air

    Science.gov (United States)

    La Ferrara, Vera; De Maria, Antonella; Rametta, Gabriella; Della Noce, Marco; Vittoria Mercaldo, Lucia; Borriello, Carmela; Bruno, Annalisa; Delli Veneri, Paola

    2017-08-01

    ZnO nanorods are a good candidate for replacing standard photoanodes, such as TiO2, in perovskite solar cells and in principle superseding the high performances already obtained. This is possible because ZnO nanorods have a fast electron transport rate due to their large surface area. An array of ZnO nanorods is grown by chemical bath deposition starting from Al-doped ZnO (AZO) used both as a seed layer and as an efficient transparent anode in the visible spectral range. In particular, in this work we fabricate methylammonium lead iodide (CH3NH3PbI3) perovskite solar cells using glass/AZO/ZnO nanorods/perovskite/Spiro-OMeTAD/Au as the architecture. The growth of ZnO nanorods has been optimized by varying the precursor concentrations, growth time and solution temperature. All the fabrication process and photovoltaic characterizations have been carried out in ambient air and the devices have not been encapsulated. Power conversion efficiency as high as 7.0% has been obtained with a good stability over 20 d. This is the highest reported value to the best of our knowledge and it is a promising result for the development of perovskite solar cells based on ZnO nanorods and AZO.

  11. Structural and optical properties of ZnO nanostructures electrochemically synthesized on AZO/Ag/AZO-multilayer-film-coated polyethersulfone substrates

    International Nuclear Information System (INIS)

    Oh, Dohyun; Yoo, Chanho; No, Youngsoo; Kim, Suyoun; Kim, Taewhan; Cho, Woonjo; Kim, Jinyoung

    2012-01-01

    ZnO nanostructures were formed on Al-doped ZnO (AZO)/Ag/AZO-multilayer-film-coated flexible polyethersulfone (PES) substrates at low temperature by using an electrochemical deposition method. The resistivity of the AZO/Ag/AZO multilayer films decreased with increasing thickness of the Ag film. X-ray diffraction patterns for the ZnO nanostructures showed that the crystal structure of the ZnO was hexagonal wurtzite and that the orientation was along the c-axis perpendicular to the substrate. Scanning electron microscopy images showed that the ZnO nanostructures grown at current densities of - 1.0 and - 1.5 mA/cm 2 were ZnO nanorods with diameters of 150 nm and ZnO nanoflowers with a planar dimension, respectively. Photoluminescence spectra showed that the band-edge emission peak of the ZnO nanostructures dominantly appeared in the ultraviolet region. These results showed that ZnO nanorods and nanoflowers with high quality were synthesized on AZO/Ag/AZO-multilayer-film-coated PES substrates.

  12. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

    International Nuclear Information System (INIS)

    Xu Denghui; Deng Zhenbo; Xu Ying; Xiao Jing; Liang Chunjun; Pei Zhiliang; Sun Chao

    2005-01-01

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar o C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10 -4 Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm 2

  13. Inductively coupled hydrogen plasma processing of AZO thin films for heterojunction solar cell applications

    International Nuclear Information System (INIS)

    Zhou, H.P.; Xu, S.; Zhao, Z.; Xiang, Y.

    2014-01-01

    Highlights: • A high-density plasma reactor of inductively coupled plasma source is used in this work. • The conductivity and transmittance can be enhanced simultaneously in the hydrogen process. • The formation of additional donors and passivation due to the hydrogen plasma processing. • The photovoltaic improvement due to the improved AZO layer and hetero-interface quality in the solar cells. - Abstract: Al-doped ZnO (AZO) thin films deposited by means of RF magnetron sputtering were processed in a low frequency inductively coupled plasma of H 2 , aiming at heterojunction (HJ) solar cell applications. A variety of characterization results show that the hydrogen plasma processing exerts a significant influence on the microstructures, electrical and optical properties of the AZO films. The incorporation of hydrogen under the optimum treatment simultaneously promoted the transmittance and conductivity due to the hydrogen associated passivation effect on the native defects and the formation of shallow donors in the films, respectively. A p-type c-Si based HJ solar cell with a front AZO contact was also treated in as-generated non-equilibrium hydrogen plasma and the photovoltaic performance of the solar cell was prominently improved. The underlying mechanism was discussed in terms of the beneficial impacts of high-density hydrogen plasma on the properties of AZO itself and the hetero-interfaces involved in the HJ structure (interface defect and energy band configuration)

  14. Influences of oxygen gas flow rate on electrical properties of Ga-doped ZnO thin films deposited on glass and sapphire substrates

    International Nuclear Information System (INIS)

    Makino, Hisao; Song, Huaping; Yamamoto, Tetsuya

    2014-01-01

    The Ga-doped ZnO (GZO) films deposited on glass and c-plane sapphire substrates have been comparatively studied in order to explore the role of grain boundaries in electrical properties. The influences of oxygen gas flow rates (OFRs) during the deposition by ion-plating were examined. The dependences of carrier concentration, lattice parameters, and characteristic of thermal desorption of Zn on the OFR showed common features between glass and sapphire substrates, however, the Hall mobility showed different behavior. The Hall mobility of GZO films on glass increased with increasing OFR of up to 15 sccm, and decreased with further increasing OFR. On the other hand, the Hall mobility of GZO films on c-sapphire increased for up to 25 sccm. The role of grain boundary in polycrystalline GZO films has been discussed. - Highlights: • Ga-doped ZnO films were deposited on glass and c-sapphire by ion-plating. • The epitaxial growth on c-sapphire was confirmed by X-ray diffraction. • Dependence of Hall mobility showed different tendency between glass and sapphire. • Grain boundaries influence transport properties at high O 2 gas flow rate

  15. Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

    Directory of Open Access Journals (Sweden)

    Shuhan Jing

    2015-04-01

    Full Text Available The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.

  16. Evolution of magnetostructural transition and magnetocaloric effect with Al doping in MnCoGe1-xAlx compounds

    KAUST Repository

    Bao, Lifu

    2014-01-03

    The effect of Al doping in MnCoGe1-xAlx compounds has been investigated. The substitution of Al for Ge enhances Mn-Mn covalent bonding by shortening the distance of nearest Mn atom layers, and thus stabilizes the hexagonal structure. As a result, first-order magnetostructural transition between ferromagnetic martensite and paramagnetic austenite takes place for the optimized compositions (x = 0.01, 0.02). Accompanied with the magnetostructural transition, large magnetocaloric effect (MCE) is observed. More doping of Al(x = 0.03, 0.04) leads to the separation of magnetic and structural transitions and remarkable reduction of MCE. © 2014 IOP Publishing Ltd.

  17. Electrical resistivity change in Al:ZnO thin films dynamically deposited by bipolar pulsed direct-current sputtering and a remote plasma source

    International Nuclear Information System (INIS)

    Yang, Wonkyun; Joo, Junghoon

    2010-01-01

    The Al-doped ZnO (AZO) thin films for a transparent conducting oxide in solar cell devices were deposited by bipolar pulsed dc magnetron sputtering. This work was performed in an in-line type system and investigated AZO films in a static deposition mode and dynamic one, which is more important in the practical fields. Because of this dynamic deposition process, the zigzagged columnar structure was observed. This resulted in the decreasing electrical property, optical properties, and surface roughness. As a deposition in the dynamic mode, the resistivity increased from 1.64x10 -3 to 2.50x10 -3 Ω cm, as compared to that in the static mode, and the transmittance also decreased from 83.9% to 78.3%. To recover the disadvantage, a remote plasma source (RPS) was supported between the substrate and target for reducing zigzagged formation during the deposition. The deposition rate decreased by using RPS, but the electrical and optical properties of films got better than only dynamic mode. The resistivity and transmittance in the dynamic mode using RPS were 2.1x10 -3 Ω cm and 85.5%, respectively. In this study, the authors found the possibility to advance the electrical and optical properties of AZO thin films in the industry mode.

  18. Catalyst-free growth of Al-doped SnO2 zigzag-nanobelts for low ppm detection of organic vapours

    Science.gov (United States)

    Sinha, Sudip Kumar; Ghosh, Saptarshi

    2016-10-01

    In this effort, we report on development of specific sensors dedicated for detection of two of these volatiles, namely ethanol and acetone, below the prescribed statutory limits. Single crystalline Al-doped SnO2 zigzag nanobelt structures were deposited on Si substrate by a catalyst-free thermal evaporation method. The Al-doped SnO2 zigzag nanostructures exhibit high sensitivity and repeatability together with coveted features like fast response and excellent stability. Structural attributes involving the crystal quality and morphology of Al-doped SnO2 zigzag nanobelts were analyzed using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy and transmission electron microscopy. The microscopic images revealed formation of randomly oriented 'zigzag-like' nanobelts with characteristic width between 60 nm and 200 nm and length of 50-300 μm. The Al-doping was observed to have a discerning effect in enhancing the sensitivity in comparison to the pristine nanowires by creating excess oxygen vacancies in the crystal lattice, confirmed through XPS and PL spectra.

  19. Chrystal structure properties of Al-doped Li{sub 4}Ti{sub 5}O{sub 12} synthesized by solid state reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Sandi, Dianisa Khoirum, E-mail: dianisa875@gmail.com; Suryana, Risa, E-mail: rsuryana@staff.uns.ac.id [Department of Physics, Faculty of Mathematics and Natural Sciences, Sebelas Maret University (Indonesia); Priyono, Slamet, E-mail: slam013@lipi.go.id [Physics Research Center (P2F)-LIPI, Puspiptek Area, Serpong, Tangerang (Indonesia)

    2016-02-08

    This research aim is to analyze the effect of Aluminum (Al) doping in the structural properties of Al-doped Li{sub 4}Ti{sub 5}O{sub 12} as anode in lithium ion battery. Al-doped Li{sub 4}Ti{sub 5}O{sub 12} powders were synthesized by solid state reaction method. LiOH.H{sub 2}O, TiO{sub 2}, and Al{sub 2}O{sub 3} were raw materials. These materials were milled for 15 h, calcined at temperature of 750{sup o}C and sintered at temperature of 800{sup o}C. Mole percentage of doping Al (x) was varied at x=0; x=0.025; and x =0.05. Al-doped Li{sub 4}Ti{sub 5}O{sub 12} powders were synthesized by solid state reaction method. X-ray diffraction was employed to determine the structure of Li{sub 4}Ti{sub 5}O{sub 12}. The PDXL software was performed on the x-ray diffraction data to estimate the phase percentage, the lattice parameter, the unit cell volume, and the crystal density. Al-doped Li{sub 4}Ti{sub 5}O{sub 12} has cubic crystal structure. Al-doping at x=0 and x=0.025 does not change the phase as Li{sub 4}Ti{sub 5}O{sub 12} while at x=0.050 the phase changes to the LiTiAlO{sub 4}. The diffraction patterns show that the angle shifted to the right as the increase of x which indicated that Al substitute Ti site. Percentage of Li{sub 4}Ti{sub 5}O{sub 12} phase at x=0 and x=0.025 was 97.8% and 96.8%, respectively. However, the lattice parameters, the unit cell volume, and the crystal density does not change significantly at x=0; x=0.025; and x=0.050. Based on the percentage of Li{sub 4}Ti{sub 5}O{sub 12} phase, the Al-doped Li at x=0 and x=0.025 is promising as a lithium battery anode.

  20. Optical and Structural Properties of MEH-PPV: ZnO Nano composites

    International Nuclear Information System (INIS)

    Nurul Zayana Yahya; Mohamad Rusop; Mohamad Rusop

    2011-01-01

    Thin films of conducting unsaturated polymer of red color poly [2- methoxy-5(2-ethyl hexyloxy)-phenylene vinylene] (MEH-PPV) containing different weight percent of ZnO nanoparticles were deposited by spin coating techniques. The MEH-PPV: ZnO solutions were spin coated onto glass substrates. The spun MEH-PPV: ZnO thin films were used for investigating the optical properties by using Ultraviolet-Visible Spectrometer (UV-Vis). The structural properties of the thin films were investigated by Scanning Electron Microscopy (SEM). For MEH-PPV: ZnO nano composites, the UV-Vis absorption bands increases and showing slight blue shift compared to the pure MEH-PPV. From the SEM images of some MEH-PPV: ZnO nano composites, it can be seen that ZnO nanoparticles form aggregated regions. (author)

  1. Textured surface boron-doped ZnO transparent conductive oxides on polyethylene terephthalate substrates for Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Chen Xinliang; Lin Quan; Ni Jian; Zhang Dekun; Sun Jian; Zhao Ying; Geng Xinhua

    2011-01-01

    Textured surface boron-doped zinc oxide (ZnO:B) thin films were directly grown via low pressure metal organic chemical vapor deposition (LP-MOCVD) on polyethylene terephthalate (PET) flexible substrates at low temperatures and high-efficiency flexible polymer silicon (Si) based thin film solar cells were obtained. High purity diethylzinc and water vapors were used as source materials, and diborane was used as an n-type dopant gas. P-i-n silicon layers were fabricated at ∼ 398 K by plasma enhanced chemical vapor deposition. These textured surface ZnO:B thin films on PET substrates (PET/ZnO:B) exhibit rough pyramid-like morphology with high transparencies (T ∼ 80%) and excellent electrical properties (Rs ∼ 10 Ω at d ∼ 1500 nm). Finally, the PET/ZnO:B thin films were applied in flexible p-i-n type silicon thin film solar cells (device structure: PET/ZnO:B/p-i-n a-Si:H/Al) with a high conversion efficiency of 6.32% (short-circuit current density J SC = 10.62 mA/cm 2 , open-circuit voltage V OC = 0.93 V and fill factor = 64%).

  2. Effect of thickness on structural, electrical, optical and magnetic properties of Co and Al doped ZnO films deposited by sol-gel route

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Mamta [Department of Electronic Science, University of Delhi South Campus, New Delhi 110021 (India); Mehra, R.M. [Department of Electronic Science, University of Delhi South Campus, New Delhi 110021 (India)], E-mail: rammehra2003@yahoo.com

    2008-12-30

    This paper reports deposition and characterization of Zn{sub 0.94}Co{sub 0.05}Al{sub 0.01}O films of thickness ranging from 70 nm to 400 nm. These films were deposited on a glass (Corning, 7059) substrate using sol-gel route. The films have been characterized to study their structural, electrical, optical and magnetic properties. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to study the crystallinity and growth mode of the films. The films deposited up to a thickness of 200 nm showed improvement in crystallinity and preferential c-axis orientation. A transition in the growth mode from vertical (c-axis) to lateral (a and b-axis) was observed with further increase in the thickness of the film. The average transmittance of the films for thickness less than 200 nm was above 80% in the visible region which decreased at higher thickness of the film. The resistivity of the film was found to decrease with increase in thickness up to 200 nm. Ferromagnetism, at room temperature, was confirmed for 200 nm and 400 nm thick films.

  3. Effect of thickness on structural, electrical, optical and magnetic properties of Co and Al doped ZnO films deposited by sol-gel route

    International Nuclear Information System (INIS)

    Sharma, Mamta; Mehra, R.M.

    2008-01-01

    This paper reports deposition and characterization of Zn 0.94 Co 0.05 Al 0.01 O films of thickness ranging from 70 nm to 400 nm. These films were deposited on a glass (Corning, 7059) substrate using sol-gel route. The films have been characterized to study their structural, electrical, optical and magnetic properties. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to study the crystallinity and growth mode of the films. The films deposited up to a thickness of 200 nm showed improvement in crystallinity and preferential c-axis orientation. A transition in the growth mode from vertical (c-axis) to lateral (a and b-axis) was observed with further increase in the thickness of the film. The average transmittance of the films for thickness less than 200 nm was above 80% in the visible region which decreased at higher thickness of the film. The resistivity of the film was found to decrease with increase in thickness up to 200 nm. Ferromagnetism, at room temperature, was confirmed for 200 nm and 400 nm thick films.

  4. Defect-induced room temperature ferromagnetic properties of the Al-doped and undoped ZnO rod-like nanostructure

    CSIR Research Space (South Africa)

    Jule, L

    2017-07-01

    Full Text Available ) properties of the AZO (Zn1-xAlxO,0.1x0.30) are reported. EPR signal reveals the origin of FM is purely intrinsic and related with interaction of clusters carrying net magnetic moment coming from electron spin trapped in defect states. Increasing Al...

  5. Study on Optoelectronic Characteristics of Sn-Doped ZnO Thin Films on Poly(ethylene terephthalate) and Indium Tin Oxide/Poly(ethylene terephthalate) Flexible Substrates

    Science.gov (United States)

    Cheng, Chi-Hwa; Chen, Mi; Chiou, Chin-Lung; Liu, Xing-Yang; Weng, Lin-Song; Koo, Horng-Show

    2013-05-01

    Transparent conductive oxides of Sn-doped ZnO (SZO) films with doping weight ratios of 2.0, 3.0, 4.0, and 5.0 wt % have been deposited on indium tin oxide (ITO)/poly(ethylene terephthalate) (PET) and PET flexible substrates at room temperature by pulsed laser deposition (PLD). Resultant films of SZO on ITO/PET and PET flexible substrates are amorphous in phase. It is found that undoped and SZO films on ITO/PET is anomalously better than films on PET in optical transmittance in the range of longer wavelength, possibly due to the refraction index difference between SZO, ITO films, and PET substrates, Burstein-Moss effect and optical interference of SZO/ITO bilayer films and substrate materials, and furthermore resulting in the decrement of reflection. The lowest electrical resistivity (ρ) of 4.0 wt % SZO films on flexible substrates of PET and ITO/PET are 3.8×10-2 and ρ= 1.2×10-2 Ω.cm, respectively. It is found that electrical and optical properties of the resultant films are greatly dependent on various amount of Sn element doping effect and substrate material characteristics.

  6. Optical and structural properties of nanostructured ZnO thin films deposited onto FTO/glass substrate by a solution-based technique

    CSIR Research Space (South Africa)

    Berruet, M

    2013-10-01

    Full Text Available Nanostructured zinc oxide thin films were spin coated on conductive glass substrates via a sol–gel based technique using zinc acetate dihydrate as precursor. The pH of the alkalis used as catalytic agents in the hydrolysis step is shown to have a...

  7. Intrinsic and extrinsic doping of ZnO and ZnO alloys

    Science.gov (United States)

    Ellmer, Klaus; Bikowski, André

    2016-10-01

    In this article the doping of the oxidic compound semiconductor ZnO is reviewed with special emphasis on n-type doping. ZnO naturally exhibits n-type conductivity, which is used in the application of highly doped n-type ZnO as a transparent electrode, for instance in thin film solar cells. For prospective application of ZnO in other electronic devices (LEDs, UV photodetectors or power devices) p-type doping is required, which has been reported only minimally. Highly n-type doped ZnO can be prepared by doping with the group IIIB elements B, Al, Ga, and In, which act as shallow donors according to the simple hydrogen-like substitutional donor model of Bethe (1942 Theory of the Boundary Layer of Crystal Rectifiers (Boston, MA: MIT Rad Lab.)). Group IIIA elements (Sc, Y, La etc) are also known to act as shallow donors in ZnO, similarly explainable by the shallow donor model of Bethe. Some reports showed that even group IVA (Ti, Zr, Hf) and IVB (Si, Ge) elements can be used to prepare highly doped ZnO films—which, however, can no longer be explained by the simple hydrogen-like substitutional donor model. More probably, these elements form defect complexes that act as shallow donors in ZnO. On the other hand, group V elements on oxygen lattice sites (N, P, As, and Sb), which were viewed for a long time as typical shallow acceptors, behave instead as deep acceptors, preventing high hole concentrations in ZnO at room temperature. Also, ‘self’-compensation, i.e. the formation of a large number of intrinsic donors at high acceptor concentrations seems to counteract the p-type doping of ZnO. At donor concentrations above about 1020 cm-3, the electrical activation of the dopant elements is often less than 100%, especially in polycrystalline thin films. Reasons for the electrical deactivation of the dopant atoms are (i) the formation of dopant-defect complexes, (ii) the compensation of the electrons by acceptors (Oi, VZn) or (iii) the formation of secondary phases, for

  8. DFT studies of Si- and Al-doping effects on the acetone sensing properties of BC3 graphene

    Science.gov (United States)

    Moradi, Morteza; Noei, Maziar; Ahmadi Peyghan, Ali

    2013-11-01

    In order to find a novel sensor, reactivity and sensitivity of the intrinsic, Al- and Si-doped BC3 graphene-like sheets to an acetone molecule were investigated by using B3LYP and ωB97X-D density functional calculations. Adsorption of acetone on the intrinsic, Al- and Si-doped BC3 sheets releases energies of about 7.2, 36.5 and 24.8 kcal/mol, respectively, using ωB97X-D. The Si-doped sheet presents high sensitivity to acetone compared with the intrinsic and Al-doped sheets indicated by the calculated geometrical structures and electronic properties for these systems. The HOMO/LUMO energy gap of Si-doped BC3 sheet is significantly decreased from 2.20 to 1.65 eV (B3LYP), which would result in electrical conductance increment. Thus, Si-doped sheet are expected to be a potential candidate for detecting the presence of acetone.

  9. Room temperature inorganic polycondensation of oxide (Cu2O and ZnO) nanoparticles and thin films preparation by the dip-coating technique

    OpenAIRE

    Salek, Guillaume; Tenailleau, Christophe; Dufour, Pascal; Guillemet-Fritsch, Sophie

    2015-01-01

    International audience; Oxide thin solid filmswere prepared by dip-coating into colloidal dispersions of oxide nanoparticles stabilized at room temperaturewithout the use of chelating or complex organic dispersing agents. Crystalline oxide nanoparticles were obtained by inorganic polycondensation and characterized by X-ray diffraction and field emission gun scanning electron microscopy. Water and ethanol synthesis and solution stabilization of oxide nanoparticle method was optimized to prepar...

  10. High rate (∼7 nm/s), atmospheric pressure deposition of ZnO front electrode for Cu(In,Ga)Se2 thin-film solar cells with efficiency beyond 15%

    NARCIS (Netherlands)

    Illiberi, A.; Grob, F.; Frijters, C.; Poodt, P.; Ramachandra, R.; Winands, H.; Simor, M.; Bolt, P.J.

    2013-01-01

    Undoped zinc oxide (ZnO) films have been grown on a moving glass substrate by plasma-enhanced chemical vapor deposition at atmospheric pressure. High deposition rates of ∼7 nm/s are achieved at low temperature (200°C) for a substrate speed from 20 to 60 mm/min. ZnO films are highly transparent in

  11. A Regrowth Method for the Fabrication of High-Quality ZnO Films and Their Application in Fast-Response UV Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Nam, Giwoong; Kim, Sungsu; Jo, Euije; Kim, Gyeongjae; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of); Son, Jeong-Sik [Kyungwoon University, Gumi (Korea, Republic of); Kim, Sung-O [Kansas State University, Manhattan (United States)

    2017-07-15

    In this study, we fabricated high-quality ZnO films using hydrothermally grown ZnO nanorods and a spin-coated Al-doped ZnO film by using regrowth method. The photoluminescence (PL) intensity ratios of the near-band-edge (NBE) to deep-level (DL) emission peaks (I{sub NBE}/I{sub DL}) for ZnO nanorods (samples 1) and ZnO film (sample 2) were 2.13 and 24.3, respectively. The redshift from 3.288 (sample 2) to 3.278 eV (sample 1) and low I{sub NBE}/I{sub DL} ratio in PL spectra were attributed to large mismatch between ZnO and Si substrate, resulting in a residual stress and the low optical properties. In case of sample 2, the photocurrent was sharply increased without the exponential rise because of enhanced optical properties of ZnO film by regrowth. The regrowth method is expected to represent a possible route for fast-response ultraviolet sensors.

  12. Computational investigation of the electronic and structural properties of CN radical on the pristine and Al-doped (6, 0) BN nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Soltani, Alireza, E-mail: alireza.soltani46@yahoo.com [Young Researchers and Elite Club, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Moradi, Ali Varasteh [Department of Chemistry, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Bahari, Mahsa [Young Researchers and Elite Club, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Masoodi, Anis [Department of Chemistry, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of); Shojaee, Shamim [Young Researchers and Elite Club, Gorgan Branch, Islamic Azad University, Gorgan (Iran, Islamic Republic of)

    2013-12-01

    We have performed first-principle calculations to investigate the adsorption behavior of the CN radical (CåN) on the external surface of H-capped Al-doped (6, 0) zigzag single-walled BN nanotubes (BNNT). We calculated the bond length, gap energies, dipole moments, and electronic properties of the {sup ·}CN on the exterior surface of SWBNNT. Binding energy corresponding to the most stable configuration of CN radical on Al{sub N}-doped BNNT is found to be −471.73 kJ mol{sup −1}. The calculated density of states (DOS) reveals that there is a significant orbital hybridization between {sup ·}CN and Al-doping species in the adsorption process being evidence of an exothermic process. The results indicate that BNNT could be a suitable sensor.

  13. Computational investigation of the electronic and structural properties of CN radical on the pristine and Al-doped (6, 0) BN nanotubes

    International Nuclear Information System (INIS)

    Soltani, Alireza; Moradi, Ali Varasteh; Bahari, Mahsa; Masoodi, Anis; Shojaee, Shamim

    2013-01-01

    We have performed first-principle calculations to investigate the adsorption behavior of the CN radical (CåN) on the external surface of H-capped Al-doped (6, 0) zigzag single-walled BN nanotubes (BNNT). We calculated the bond length, gap energies, dipole moments, and electronic properties of the · CN on the exterior surface of SWBNNT. Binding energy corresponding to the most stable configuration of CN radical on Al N -doped BNNT is found to be −471.73 kJ mol −1 . The calculated density of states (DOS) reveals that there is a significant orbital hybridization between · CN and Al-doping species in the adsorption process being evidence of an exothermic process. The results indicate that BNNT could be a suitable sensor

  14. Preparation of electron buffer layer with crystalline ZnO nanoparticles in inverted organic photovoltaic cells

    Science.gov (United States)

    Lee, Donghwan; Kang, Taeho; Choi, Yoon-Young; Oh, Seong-Geun

    2017-06-01

    Zinc oxide (ZnO) nanoparticles synthesized through sol-gel method were used to fabricate the electron buffer layer in inverted organic photovoltaic cells (OPVs) after thermal treatment. To investigate the effect of thermal treatment on the formation of crystalline ZnO nanoparticles, the amorphous ZnO nanoparticles were treated via hydrothermal method. The crystalline phase of ZnO with well-ordered structure could be obtained when the amorphous phase of ZnO was processed under hydrothermal treatment at 170 °C. The crystalline structure of ZnO thin film in inverted organic solar cell could be obtained under relatively low annealing temperature by using thermally treated ZnO nanoparticles. The OPVs fabricated by using crystalline ZnO nanoparticles for electron buffer layer exhibited higher efficiency than the conventional ZnO nanoparticles. The best power conversion efficiency (PCE) was achieved for 7.16% through the ZnO film using the crystalline ZnO nanoparticles. The proposed method to prepared ZnO nanoparticles (NPs) could effectively reduce energy consumption during the fabrication of OPVs, which would greatly contribute to advantages such as lower manufacturing costs, higher productivity and application on flexible substrates.

  15. Subthreshold swing improvement in MoS2transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2gate dielectric stack.

    Science.gov (United States)

    Nourbakhsh, Amirhasan; Zubair, Ahmad; Joglekar, Sameer; Dresselhaus, Mildred; Palacios, Tomás

    2017-05-11

    Obtaining a subthreshold swing (SS) below the thermionic limit of 60 mV dec -1 by exploiting the negative-capacitance (NC) effect in ferroelectric (FE) materials is a novel effective technique to allow the reduction of the supply voltage and power consumption in field effect transistors (FETs). At the same time, two-dimensional layered semiconductors, such as molybdenum disulfide (MoS 2 ), have been shown to be promising candidates to replace silicon MOSFETs in sub-5 nm-channel technology nodes. In this paper, we demonstrate NC MoS 2 FETs by incorporating a ferroelectric Al-doped HfO 2 (Al : HfO 2 ), a technologically compatible material, in the FET gate stack. Al : HfO 2 thin films were deposited on Si wafers by atomic layer deposition. Voltage amplification up to 1.25 times was observed in a FE bilayer stack of Al : HfO 2 /HfO 2 with a Ni metallic intermediate layer. The minimum SS (SS min ) of the NC-MoS 2 FET built on the FE bilayer improved to 57 mV dec -1 at room temperature, compared with SS min = 67 mV dec -1 for the MoS 2 FET with only HfO 2 as a gate dielectric.

  16. Effects of O2 plasma post-treatment on ZnO: Ga thin films grown by H2O-thermal ALD

    Science.gov (United States)

    Lee, Yueh-Lin; Chuang, Jia-Hao; Huang, Tzu-Hsuan; Ho, Chong-Long; Wu, Meng-Chyi

    2013-03-01

    Transparent conducting oxides have been widely employed in optoelectronic devices using the various deposition methods such as sputtering, thermal evaporator, and e-gun evaporator technologies.1-3 In this work, gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates via H2O-thermal atomic layer deposition (ALD) at different deposition temperatures. ALD-GZO thin films were constituted as a layer-by-layer structure by stacking zinc oxides and gallium oxides. Diethylzinc (DEZ), triethylgallium (TEG) and H2O were used as zinc, gallium precursors and oxygen source, respectively. Furthermore, we investigated the influences of O2 plasma post-treatment power on the surface morphology, electrical and optical property of ZnO:Ga films. As the result of O2 plasma post-treatment, the characteristics of ZnO:Ga films exhibit a smooth surface, low resistivity, high carrier concentration, and high optical transmittance in the visible spectrum. However, the transmittance decreases with O2 plasma power in the near- and mid-infrared regions.

  17. The roles played by Ag and Al dopants in controlling the electrical properties of ZnO varistors

    Science.gov (United States)

    Fan, Jiwei; Freer, Robert

    1995-05-01

    Four sets of ZnO-based ceramic varistors (reference samples-ZNR; doped with aluminium-AL; doped with silver-AG; doped with aluminium and silver-AA) have been prepared by the conventional mixed oxide route. The current-voltage (I-V) characteristics, determined at current densities up to 1 mA/cm2, yielded nonlinear coefficients (α) of 38, 60, 22 and 56, respectively. Dc and ac degradation tests were performed at 115 °C. Ac impedance analysis was used to determine grain (rg) and grain boundary (Rb) resistances; capacitance-voltage analysis enabled the donor density (Nd) and the barrier height (φ) to be determined. Doping the varistors with Al increased Nd, reduced rg, and improved the I-V characteristics, but caused an increase in Zn interstitials which degraded the stability. In contrast, Ag acts as an amphoteric dopant in ZnO causing a decrease in Nd, an increase in rg and Rb, and a reduction in α ; Ag located in the interstitial sites is able to block the formation and migration of new Zn interstitials, thereby improving the stability. Doping with both Al and Ag at optimum levels gives benefits from both additives, i.e., Al doping (increases Nd and decreases rg) improves nonlinearity, while Ag doping (blocks the formation and migration of Zn interstitials) improves the stability of ZnO varistors.

  18. Effects of seed layers on controlling of the morphology of ZnO nanostructures and superhydrophobicity of ZnO nanostructure/stearic acid composite films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jing; Liu, Zhihua, E-mail: sdwfliu@163.com; Liu, Junqi; E, Lei; Liu, Zhifeng, E-mail: tjulzf@163.com

    2016-11-01

    Hydrophobic ZnO self-cleaning thin films with the nanobundles and nanocarpets structures fabricated on indium tin oxides (ITO) glass substrate are reported. The water contact angle of ZnO nanobundles and nanocarpets structures (79° and 67° respectively) is higher than that of unmodified ZnO nanorods. A subsequent chemical treatment with stearic acid (SA) contributed to a superhydrophobic surface with a water contact angle of 159°. Its superhydrophobic property is originated from the nanobundles or nanocarpets structures and surface energy of SA/ZnO nanobundles and SA/ZnO nanocarpets composite nanostructures. Moreover, this promising ZnO nanostructured materials show an important application in self-cleaning smart coatings. - Highlights: • PEG and CTAB are firstly introduced to modify the morphology of ZnO seed layers. • ZnO nanobundles and nanocarpets obtained from different seed layers. • Superhydrophobic surfaces obtained by chemcial treatment using SA.

  19. High quality ZnO layers with adjustable refractive indices for integrated optics applications

    NARCIS (Netherlands)

    Heideman, Rene; Lambeck, Paul; Gardeniers, Johannes G.E.

    1995-01-01

    Thin (approx. 1 μm) crystalline ZnO films with a good optical quality and a good (0002) texture are grown under two considerably different process parameter sets using a r.f. planar magnetron sputtering unit. The optical parameters of the two corresponding ZnO layers are distinctly different: high

  20. Structural and optical properties of ZnO rods hydrothermally formed on polyethersulfone substrates

    International Nuclear Information System (INIS)

    Shin, Chang Mi; Jang, Jin Tak; Kim, Chang Yong; Ryu, Hyuk Hyun; Lee, Won Jae; Chang, Ji Ho; Son, Chang Sik; Choi, Hee Lack

    2012-01-01

    Various unique ZnO morphologies, such as cigar-like and belt-like structures and microrod and nanorod structures, were formed on flexible polyethersulfone (PES) substrates by using a low temperature hydrothermal route. The structural properties of ZnO depended highly on the precursor concentration. The effect of a thin ZnO seed layer deposited the on PES substrate by using atomic layer deposition on the structural and the optical properties of ZnO hydrothermally grown on the ZnO seed layer/PES substrates was studied. Field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL) measurements were employed to analyze the characteristics of hydrothermally-grown ZnO. The diameter of the ZnO nanorods grown on the ZnO seed layer/PES substrates increased with increasing precursor concentration from 0.025 to 0.125 M due to the Ostwald ripening process. ZnO hydrothermally-grown on the ZnO seed layer/PES substrates at a low precursor concentration showed better structural properties than ZnO formed without a seed layer. Well-formed ZnO nanorods deposited on the ZnO seed layer/PES substrates showed two PL peaks, one in the ultraviolet and the other in the visible region, whereas horizontally positioned ZnO formed on the PES substrate in the absence of a seed layer emitted only one broad PL peak in the violet region. The ZnO grown on PES substrates in this work can be used as high-quality transparent electrodes for solar cells fabricated on flexible substrates.

  1. Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Jingjin Wu

    2016-08-01

    Full Text Available The 4 at. % zirconium-doped zinc oxide (ZnO:Zr films grown by atomic layer deposition (ALD were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

  2. Synthesis and Characterization of Pb(Zr., Ti.)O-Pb(Nb/, Zn/)O Thin Film Cantilevers for Energy Harvesting Applications

    KAUST Repository

    Fuentes-Fernandez, E. M. A.

    2012-01-18

    A complete analysis of the morphology, crystallographic orientation, and resulting electrical properties of Pb(Zr0.53,Ti0.47) Pb(Nb1/3, Zn2/3)O3 (PZT-PZN) thin films, as well as the electrical behavior when integrated in a cantilever for energy harvesting applications, is presented. The PZT-PZN films were deposited using sol-gel methods. We report that using 20% excess Pb, a nucleation layer of PbTiO3 (PT), and a fast ramp rate provides large grains, as well as denser films. The PZT-PZN is deposited on a stack of TiO2/PECVD SiO2/Si3N4/thermal SiO2/Poly-Si/Si. This stack is designed to allow wet-etching the poly-Si layer to release the cantilever structures. It was also found that the introduction of the poly-Si layer results in larger grains in the PZT-PZN film. PZT-PZN films with a dielectric constant of 3200 and maximum polarization of 30 μC/cm2 were obtained. The fabricated cantilever devices produced ~300–400 mV peak-to-peak depending on the cantilever design. Experimental results are compared with simulations.

  3. Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

    Science.gov (United States)

    Wu, Jingjin; Zhao, Yinchao; Zhao, Ce Zhou; Yang, Li; Lu, Qifeng; Zhang, Qian; Smith, Jeremy; Zhao, Yongming

    2016-08-13

    The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV-vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350-550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

  4. Laser-induced grating in ZnO

    DEFF Research Database (Denmark)

    Ravn, Jesper N.

    1992-01-01

    A simple approach for the calculation of self-diffraction in a thin combined phase and amplitude grating is presented. The third order nonlinearity, the electron-hole recombination time, and the ambipolar diffusion coefficient in a ZnO crystal are measured by means of laser-induced self-diffracti......A simple approach for the calculation of self-diffraction in a thin combined phase and amplitude grating is presented. The third order nonlinearity, the electron-hole recombination time, and the ambipolar diffusion coefficient in a ZnO crystal are measured by means of laser-induced self...

  5. Degradation of ZnO-based window layers for thin-film CIGS by accelerated stress exposures

    Science.gov (United States)

    Pern, F. J.; Noufi, R.; To, B.; DeHart, C.; Li, X.; Glick, S. H.

    2008-08-01

    The reliability of ZnO-based window layer for CuInGaSe2 (CIGS) solar cells was investigated. Samples of RF magnetron-sputtered, single-layer intrinsic and Al-doped ZnO and their combined bilayer on glass substrates were exposed in a weatherometer (WOM) and damp heat (DH) conditions with or without acetic acid vapor. Some preliminary samples of single-layer Al-doped Zn1-xMgxO (ZMO) alloy, a potential replacement for Al:ZnO with a wider bandgap, were also evaluated in the DH. The Al-doped ZnO and ZMO films showed irreversible loss in the conducting properties, free carrier mobility, and characteristic absorption band feature after DH > WOM. The degradation rate was also reduced by higher film thickness, higher deposition substrate temperature, and dry-out intervals. The results of X-ray diffraction analysis indicate that the ZnO-based films underwent structural degeneration by losing their highly (002) preferential orientation with possible transformation from hexagonal into cubic and formation of Zn(OH)2. Periodic optical micro-imaging observations suggested a temporal process that involves initial hydrolysis of the oxides at sporadic weak spots, swelling and popping of the hydrolyzed spots due to volume increase, segregation of hydrolyzed regions causing discontinuity of electrical path, hydrolysis of the oxide-glass interface, and finally, formation of insulating oxides/hydroxides with visible delamination over larger areas.

  6. Sintering and annealing effects on ZnO microstructure and thermoelectric properties

    International Nuclear Information System (INIS)

    Søndergaard, Martin; Bøjesen, Espen D.; Borup, Kasper A.; Christensen, Sebastian; Christensen, Mogens; Iversen, Bo B.

    2013-01-01

    The influence of different thermal treatments on zinc oxide has been investigated regarding the thermal diffusivity and structural properties of doped and undoped samples. ZnO powders having various grain sizes and morphologies, with or without aluminum doping, have been prepared under different temperatures by spark plasma sintering (SPS). The microstructural properties and thermal diffusivities of the prepared samples have been measured before and after annealing treatments in air at 800 °C. In undoped samples, the crystallite sizes increased after the annealing treatments, while it was retained in the Al-doped samples. The thermal diffusivities, microstrain and degree of preferred orientation were affected by the SPS temperature and the annealing; however, the general trends were retained after the annealing treatments. Lower maximum temperature yielded a lower degree of preferred orientation, less microstrain, higher density of grain boundaries, lower thermal diffusivities and, for Al-doped samples, lower electrical conductivity and a difference in zT-values from 0.2 to 0.3 at 800 °C. Calculations of the wavelengths and mean free paths of the phonons that contribute to the main part of the thermal conductivity have been conducted and reveal that nanostructures <12 nm are required to lower the thermal conductivity by quantum confinement

  7. Low temperature growth and optical properties of ZnO nanowires using an aqueous solution method.

    Science.gov (United States)

    Chu, Manh-Hung; Lee, Joon-Hyung; Kim, Jeong-Joo; Kim, Kyeong-Won; Norton, D P; Heo, Young-Woo

    2012-02-01

    ZnO nanowires were grown on indium tin oxide (ITO) coated glass substrates at a low temperature of 90 degrees C using an aqueous solution method. The ZnO seeds were coated on the ITO thin films by using a spin coater. ZnO nanowires were formed in an aqueous solution containing zinc nitrate hexahydrate (Zn(NO3)2 x 6H2O) and hexamethylenetetramine (C6H12N4). The pH value and concentration of the solution play an important role in the growth and morphologies of ZnO nanowires. The size of ZnO naonowires increased as the concentration of the solution increased. It was formed with a top surface of hexagonal and tapered shape at low and high pH values respectively. Additionally, the single crystalline structure and optical property of the ZnO nanowires were investigated using high-resolution transmission electron microscopy and photoluminescence spectroscopy.

  8. Luminescence properties of ZnO layers grown on Si-on-insulator substrates

    International Nuclear Information System (INIS)

    Kumar, Bhupendra; Gong, Hao; Vicknesh, S.; Chua, S. J.; Tripathy, S.

    2006-01-01

    The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E 2 high optical phonon mode near 438 cm -1 in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05-3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems

  9. Photosensitivity of nanocrystalline ZnO films grown by PLD

    International Nuclear Information System (INIS)

    Ayouchi, R.; Bentes, L.; Casteleiro, C.; Conde, O.; Marques, C.P.; Alves, E.; Moutinho, A.M.C.; Marques, H.P.; Teodoro, O.; Schwarz, R.

    2009-01-01

    We have studied the properties of ZnO thin films grown by laser ablation of ZnO targets on (0 0 0 1) sapphire (Al 2 O 3 ), under substrate temperatures around 400 deg. C. The films were characterized by different methods including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atomic force microscopy (AFM). XPS analysis revealed that the films are oxygen deficient, and XRD analysis with θ-2θ scans and rocking curves indicate that the ZnO thin films are highly c-axis oriented. All the films are ultraviolet (UV) sensitive. Sensitivity is maximum for the films deposited at lower temperature. The films deposited at higher temperatures show crystallite sizes of typically 500 nm, a high dark current and minimum photoresponse. In all films we observe persistent photoconductivity decay. More densely packed crystallites and a faster decay in photocurrent is observed for films deposited at lower temperature

  10. Al doping influence on crystal growth, structure and superconducting properties of Y(Ca)Ba2Cu3O7−y whiskers

    International Nuclear Information System (INIS)

    Calore, L.; Rahman Khan, M.M.; Cagliero, S.; Agostino, A.; Truccato, M.; Operti, L.

    2013-01-01

    Highlights: ► Optimization of YBCO whiskers synthesis by Al 2 O 3 addition. ► First complete crystal cell characterization of undoped YBCO whiskers. ► Characterization of the doped whiskers structural and electrical properties. ► New important evidences for the bottom-up growth mechanisms. - Abstract: We synthesized Al doped Y(Ca)Ba 2 Cu 3 O 7−y (YBCO) whiskers via the solid state reaction method. Al doping was systematically varied in the nominal cationic stoichiometry of YBa 2 Cu 3 CaTe 0.5 Al x O 7−y , with 0 ⩽ x ⩽ 0.5. The amount of the grown whiskers increases for nominal Al addition up to x = 0.05, decreasing for larger concentrations. The concentration of Al incorporated in the crystals (x′) is always higher with respect to the starting stoichiometry and shows a gradient along its length, with a higher amount at the tip regions. The single crystal diffraction analyses show an increasing tetragonal character with increasing x′, with a transition from the orthorhombic to the tetragonal system for x′ = 0.13, which is in agreement with the worsening of electrical transport properties and disappearing of superconductivity for x′ = 0.19.

  11. The low resistive and transparent Al-doped SnO{sub 2} films: p-type conductivity, nanostructures and photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Benouis, C.E. [Department of Material Technology, Physics Faculty, USTOMB University, BP1505 Oran (Algeria); Benhaliliba, M., E-mail: mbenhaliliba@gmail.com [Department of Material Technology, Physics Faculty, USTOMB University, BP1505 Oran (Algeria); Mouffak, Z. [Department of Electrical and Computer Engineering California State University, Fresno, CA (United States); Avila-Garcia, A. [Cinvestav-IPN, Dept. Ingeniería Eléctrica-SEES, Apdo. Postal 14-740, 07000 México, D.F. (Mexico); Tiburcio-Silver, A. [ITT-DIE, Apdo, Postal 20, Metepec 3, 52176 Estado de Mexico (Mexico); Ortega Lopez, M.; Romano Trujillo, R. [Centro de Investigación en Dispositivos Semiconductores, Instituto de Ciencias-BUAP, 14 Sur y Av. San Claudio, C.U. Puebla, Pue. (Mexico); Ocak, Y.S. [Dicle University, Education Faculty, Science Department, 21280 Diyarbakir (Turkey)

    2014-08-01

    Highlights: • Low resistive and high transparency Al doped SnO{sub 2} films. • Films are deposited onto ITO substrate by spray pyrolysis. • Nanostructured films are revealed. • p-Type conductivity is exhibited. • Photoluminescence of films is studied. - Abstract: In this work, we study the crystalline structure, surface morphology, transmittance, optical bandgap and n/p type inversion of tin oxide (SnO{sub 2}). The Nanostructured films of Al-doped SnO{sub 2} were successfully produced onto ITO-coated glass substrates via the spray pyrolysis method at a deposition temperature of 300 °C. A (1 0 1) and (2 1 1)-oriented tetragonal crystal structure was confirmed by X-ray patterns; and grain sizes varied within the range 8−42 nm. The films were polycrystalline, showing a high transparency in the visible (VIS) and infrared (IR) spectra. The optical bandgap was estimated to be around 3.4 eV. The atomic force microscopy (AFM) analysis showed the nanostructures consisting of nanotips, nanopatches, nanopits and nanobubbles. The samples exhibited high conductivity that ranged from 0.55 to 10{sup 4} (S/cm) at ambient and showed an inversion from n to p-type as well as a degenerate semiconductor characters with a bulk concentration reaching 1.7 x 10{sup 19} cm{sup −3}. The photoluminescence measurements reveal the detection of violet, green and yellow emissions.

  12. Thermoluminescence of Ge- and Al-doped SiO2 optical fibers subjected to 0.2-4.0 Gy external photon radiotherapeutic dose

    International Nuclear Information System (INIS)

    Hossain, I.; Wagiran, H.; Yaakob, N.H.

    2013-01-01

    In this work, we studied the thermoluminescence response of Ge- and Al-doped optical fibers, its linearity, energy dependence, and sensitivity. The Ge-doped optical fibers demonstrate useful TL properties and represent an excellent candidate for use in TL dosimetry of ionizing radiation. The TL response increases monotonically over a wide photon dose range, from 0.2 Gy to 4.0 Gy. The TL results for these fibers have been compared with similar TL data for phosphor TLD-100. Commercially available Al- and Ge-doped optical fibers have both been found to yield a linear dose-TL signal relationship, although the Al-doped fiber provides only 5 % of the sensitivity of the Ge-doped fibers. The TL characteristics of Ge-doped optical fiber, plus its small size (125 μm diameter), high flexibility, ease of handling, and low cost compared with other TL materials, make this commercial optical fiber a very promising TL material for use in medicine, industry, reactor operation, and a variety of other areas. (author)

  13. Pulsed-laser deposited ZnO for device applications

    NARCIS (Netherlands)

    King, S.L.; Gardeniers, Johannes G.E.; Boyd, I.W.

    1996-01-01

    The study investigates the growth by pulsed-laser deposition (PLD) of ZnO thin films for the eventual incorporation into piezo-electric actuators and other sensors being developed at the University of Twente. All films are purely c-axis oriented, and results are presented which suggest the

  14. ZnO processing for integrated optic sensors

    NARCIS (Netherlands)

    Horsthuis, Winfried H.G.

    1986-01-01

    ZnO thin films were sputter deposited onto oxidized silicon wafers. The film quality increased with increasing applied r.f. power. Characterization of the films was performed by measurements of the attenuation of the transverse electric TE0 optical guided mode. For an applied r.f. power of 2000 W,

  15. Effect of annealing atmosphere on photoluminescence and gas sensing of solution-combustion-synthesized Al, Pd co-doped ZnO nanoparticles

    Science.gov (United States)

    Li, Yan; Liu, Min; Lv, Tan; Wang, Qiong; Zou, Yun-ling; Lian, Xiao-xue; Liu, Hong-peng

    2015-11-01

    Al, Pd co-doped ZnO nanoparticles (NPs) synthesized using a solution combustion method and subsequent annealing process under various atmospheres, including air, nitrogen, and hydrogen, were characterized using x-ray diffraction, energy-dispersive x-ray spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The gas-sensing properties of the sensors based on the NPs were also examined. The results indicated that the Al, Pd co-doped ZnO NPs, with an average crystallite size of 10 nm, exhibited enhanced gas-sensing performance compared with that of pure ZnO and Al-doped ZnO. The response of the Al, Pd co-doped ZnO NPs annealed in N2 to ethanol (49.22) was nearly 5.7 times higher than that to acetone (8.61) and approximately 20 - 27 times higher than that to benzene (2.38), carbon monoxide (2.23), and methane (1.78), which demonstrates their excellent selectivity to ethanol versus other gases. This high ethanol response can be attributed to the combined effects of the small size, Schottky barrier, lattice defects, and catalysis. [Figure not available: see fulltext.

  16. The Strategy to Control the Morphology of ZnO Nanostructure UV Sensor

    International Nuclear Information System (INIS)

    Humayun, Q; Hashim, U; Foo, Kai Loong; Ruzaidi, C M

    2015-01-01

    The control morphology of ZnO nanostructures at specific area of electrodes by implemented a cost effective fabrication process, is extremely a challenging task. Rapid sensing, fast response and fast detection capability of the electronics devices is nowadays hot subject of keen interest. Our research is one of the successful attempts to achieve the desired goal at certain levels. Therefore in the current research article the ZnO thin film and ZnO nanorods were selectively deposited by low cost sol-gel and hydrothermal growth process at the selective area of microgap electrodes spacing and further the comparative study of ZnO thin film and ZnO nanorods were conducted electrically, for ultraviolet (UV) sensing application. On exposure to ultraviolet (UV) light the current gains, response/recovery times, repeatability, of the ZnO nanorods compared with ZnO thin film was improved probably due to the role of large surface area covered by the deposited nanostructures, and the most important is the bridging nanorods at the microgap electrodes tips. All the characterization including, surface, electrical and structural of the deposited nanostructures were completed by using SEM, sourcemeter and XRD respectively. (paper)

  17. Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

    KAUST Repository

    Kim, Hyunho

    2017-02-27

    Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.

  18. Angle and Polarization Dependent Fluorescence EXAFS Measurements on Al-doped Single Crystal V_2O3 Above and Below the Transition Temperature

    Science.gov (United States)

    Müller, O.; Pfalzer, P.; Schramme, M.; Urbach, J.-P.; Klemm, M.; Horn, S.; Frenkel, A. I.; Denboer, M. L.

    1998-03-01

    We present angle and polarisation dependent flourescence EXAFS measured on Al-doped single crystal V_2O3 below and above the structural phase transition from monoclinic to trigonal. Strong self-absorption distorted the spectra; this was corrected by using the procedure described by Tröger et al. (L. Tröger, D. Arvantis, K. Baberschke, H. Michaelis, U. Grimm, and E. Zschech, Phys. Rev. B,.46), 3238 (1992), generalized to the Lytle detector employed in our work. The spectra show pronounced dependence on the angle between the threefold symmetry axes and the polarization of the incident photons, making it possible to measure the local atomic distances in different directions. We compare our results with the measurements of Frenkel et al. (A. I. Frenkel, E. A. Stern, and F. A. Chudnovsky, Sol. State Comm.102), 637 (1997) on pure V_2O3 They found that locally the monoclinic distortion persists in the trigonal metallic phase.

  19. ZnO film for application in surface acoustic wave device

    International Nuclear Information System (INIS)

    Du, X Y; Fu, Y Q; Tan, S C; Luo, J K; Flewitt, A J; Maeng, S; Kim, S H; Choi, Y J; Lee, D S; Park, N M; Park, J; Milne, W I

    2007-01-01

    High quality, c-axis oriented zinc oxide (ZnO) thin films were grown on silicon substrate using RF magnetron sputtering. Surface acoustic wave (SAW) devices were fabricated with different thickness of ZnO ranging from 1.2 to 5.5 μmUm and the frequency responses were characterized using a network analyzer. Thick ZnO films produce the strongest transmission and reflection signals from the SAW devices. The SAW propagation velocity is also strongly dependent on ZnO film thickness. The performance of the ZnO SAW devices could be improved with addition of a SiO 2 layer, in name of reflection signal amplitude and phase velocity of Rayleigh wave

  20. Atom probe microscopy of zinc isotopic enrichment in ZnO nanorods

    Directory of Open Access Journals (Sweden)

    C. N. Ironside

    2017-02-01

    Full Text Available We report on atomic probe microscopy (APM of isotopically enriched ZnO nanorods that measures the spatial distribution of zinc isotopes in sections of ZnO nanorods for natural abundance natZnO and 64Zn and 66Zn enriched ZnO nanorods. The results demonstrate that APM can accurately quantify isotopic abundances within these nanoscale structures. Therefore the atom probe microscope is a useful tool for characterizing Zn isotopic heterostructures in ZnO. Isotopic heterostructures have been proposed for controlling thermal conductivity and also, combined with neutron transmutation doping, they could be key to a novel technology for producing p-n junctions in ZnO thin films and nanorods.