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Sample records for ag thin films

  1. Microstructure of electroplated Cu(Ag) alloy thin films

    International Nuclear Information System (INIS)

    Electroplated Cu(Ag) alloy thin films are potential candidates for future electronic devices in terms of lifetime and reliability compared to copper as the state of the art interconnect material. In the present paper we focus on the microstructure of Cu(Ag) alloy films considering the grain evolution as well as silver incorporation and segregation. We show that Ag alloying addition prevents room temperature recrystallization. Thermally induced grain growth occurs mainly between 180 oC and 330 oC. Silver can be incorporated as solid solution into the Cu matrix by up to 0.8 at.% after annealing and even in higher concentrations in the as-deposited state, which is significantly above the equilibrium solubility limit. Precipitations are formed by the continuous mode and can be mainly found at the film surface but also inside the Cu(Ag) grains as ball-shaped particles. Based on our results a reliability improvement is expected by mechanical strengthening due to alloying effects while maintaining a low electrical resistivity and a {111} fiber texture.

  2. Two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Linhua, E-mail: congyu3256@tom.com [School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Optics and Photonic Technology Laboratory, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Zheng, Gaige; Zhao, Lilong; Pei, Shixin [School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Optics and Photonic Technology Laboratory, Nanjing University of Information Science and Technology, Nanjing 210044 (China)

    2015-02-15

    Ag-doped ZnO thin films were prepared by a sol–gel method. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), UV–vis and photoluminescence spectra. The results show that the Ag in the ZnO thin films annealed at 500 °C for 1 h substitutes for Zn and exists in the form of Ag{sup +} ion (Ag{sub Zn}) while the Ag in the ZnO thin films without a post-annealing mainly exists in the form of simple substance (Ag{sup 0}). The incorporation of Ag indeed can improve the ultraviolet emission of ZnO thin films and suppress the visible emissions at the same time. However, the mechanisms on the ultraviolet emission enhancement in the annealed and unannealed Ag-doped ZnO thin films are very different. As for the post-annealed Ag-doped ZnO thin films, the UV emission enhancement maybe mainly results from more electron–hole pairs (excitons) due to Ag-doping while for the unannealed Ag-doped ZnO thin films; the UV emission enhancement is attributed to the resonant coupling between exciton emission in ZnO and localized surface plasmon in Ag nanoparticles. - Highlights: • Ag-doped ZnO thin films have been prepared by the sol–gel method. • Ag-doping can enhance ultraviolet emission of ZnO thin films and depress the visible emissions at the same time. • There are two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films. • The UV emission enhancement from the resonant coupling between excitonic emissions and localized surface plasmon in Ag nanoparticle is very attractive.

  3. Ferroelectric domain of epitaxial AgNbO3 thin film

    Science.gov (United States)

    Ahn, Yoonho; Seo, Jeongdae; Lee, Kwang Jo; Son, Jong Yeog

    2016-03-01

    We investigated ferroelectric properties of silver niobate (AgNbO3) thin film grown on Nb-doped SrTiO3 substrate by pulsed laser deposition. The AgNbO3 thin film exhibited room temperature ferroelectricity with a large remanent polarization of about 31 μC/cm2 (2Pr~62 μC/cm2) and fast switching behavior within 120 ns. Triangular grains of AgNbO3 thin film were observed by atomic force microscopy (AFM). The piezoelectric force microscopy (PFM) study revealed that the AgNbO3 thin film had mosaic-like ferroelectric domain structure. In comparison with PbTiO3 thin films, domain size of the AgNbO3 thin films was smaller than that of PbTiO3 thin films. Based on Landau, Lifshitz, and Kittel (LLK) scaling law of the domain size versus film thickness curves, it is inferred that AgNbO3 thin films have slightly lower domain wall energy than that of PbTiO3 thin films.

  4. Tensoresistive Properties of Thin Film Systems Based on Ag and Co

    Directory of Open Access Journals (Sweden)

    I.M. Pazukha

    2012-10-01

    Full Text Available The results of research strain deformation properties of thin films Ag, Co and two-layers films Ag/Co in the range of deformation Δεl = 0-1 % were presented. The plastic deformation in Co layer caused a similar deformation in the entire film system, even if the strain range Ag layer is not reached the limits of the transition elastic/plastic deformation. The increasing of gauge factor value of two-layer systems in comparison with thin films Ag and Co appears as a result of electron interface scattering.

  5. Simultaneous electrodeposition of Ag-In-Se thin films

    Energy Technology Data Exchange (ETDEWEB)

    Aouaj, M.A.; Bihri, H.; Abd-Lefdil, M. [Laboratoire de Physique des Materiaux, Faculte des Sciences, Rabat (Morocco); Hajji, F.; Cherkaoui, F. [Laboratoire de corrosion et d' electrochimie, Faculte des Sciences, Rabat (Morocco); Diaz, R.; Rueda, F. [Univ. Autonoma de Madrid, Madrid (Spain). Dept. de fisica aplicada

    2006-07-01

    This paper explored the use of ternary chalcopyrite compounds as absorber materials in solar cells and optoelectronic devices. The preparation of ternary compounds is complicated due to different values of equilibrium potentials for each constituent. This paper presented a one step electrodeposition process that is used to prepare Ag-In-Se thin films on molybdenum supported on glass substrates. For the copper (Cu) based chalcopyrite, the optical band gap E{sub g} can be varied from 1 eV to 2.7 eV. For the silver (Ag) based materials, the optical band gap can be varied from 1.2 eV to 3.1 eV. Cu indium (In) deselenide (Se{sub 2}) and CuSe{sub 2} solar cells have achieved a single junction efficiency of 18.8 per cent comparable to that of the best multicrystalline silicon devices which have an efficiency of 19.8 per cent. As such, they are a material alternative to crystalline-silicon technologies. Other compounds such as CuIn{sub 3} tellurium (Te{sub 5}) with a band gap in 1.83 to 1.93 eV range and high resistivity of about 107 cm have been prepared in order to synthesize new semiconductor detectors of {gamma} ray radiation. AgInSe{sub 2} ternary compound is also a promising absorber semiconductor for solar cells and Schottky barrier diodes since its gap value is about 1.2 eV. It has been produced by co-evaporation; flash evaporation of ingots grown by sealed evacuated quartz ampoules; pulsed laser deposition; the horizontal Bridgman method; and, the electrodeposition method. Following recent studies on Cu compounds such as CuIn{sub 3}Se{sub 5} and CuIn{sub 3}Te{sub 5}, this study elaborated AgInSe{sub 2} and AgIn{sub 3}Se{sub 5} using the electrodeposition process which is a low-cost, high deposition speed process that does not require the use of vacuum. It was concluded that the composition and morphology of the films are a function of the growth conditions, and that heat treatment under nitrogen leads to silver indium deselenide. 13 refs.

  6. AgSbSe{sub 2} and AgSb(S,Se){sub 2} thin films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Garza, J.G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Rodriguez, A.C.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2011-10-01

    Silver antimony selenide (AgSbSe{sub 2}) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb{sub 2}S{sub 3}), silver selenide (Ag{sub 2}Se), selenium (Se) and silver (Ag). Sb{sub 2}S{sub 3} thin film was prepared from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}, Ag{sub 2}Se from a solution containing AgNO{sub 3} and Na{sub 2}SeSO{sub 3} and Se thin films from an acidified solution of Na{sub 2}SeSO{sub 3}, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10{sup -3} Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe{sub 2} or AgSb(S,Se){sub 2} depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe{sub 2}/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V{sub oc} = 435 mV and J{sub sc} = 0.08 mA/cm{sup 2} under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe{sub 2} as an absorber material by a non-toxic selenization process is achieved.

  7. Effect of silver growth temperature on the contacts between Ag and ZnO thin films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures,200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150 ℃ and 200℃. Ohmic contacts were formed while the growth temperatures were lower than 150℃ or higher than 200 ℃. After analysis,the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers.

  8. Enhanced photoelectrochemical performance of Ag-ZnO thin films synthesized by spray pyrolysis technique

    International Nuclear Information System (INIS)

    Highlights: → Synthesis of Ag-ZnO nanocomposites by spray pyrolysis technique. → Examine the effect of Ag doping on the structural, morphological optical, and photoelectrochemical properties. → Surface Plasmon Resonance phenomenon of the spray deposited Ag-ZnO nanocomposites. → Enhancement in photoelectrochemical performance of ZnO thin films after Ag doping. - Abstract: Silver doped zinc oxide (Ag-ZnO) thin films were deposited on glass and tin doped indium oxide (ITO) coated glass substrates by using pneumatic spray pyrolysis technique (SPT) at 450 deg. C from aqueous solutions of zinc acetate and silver nitrate precursors. The effect of silver doping on structural, morphological and optical properties of films was studied. The XRD spectra of the Ag-ZnO films indicate the polycrystalline nature having hexagonal crystal structure. SEM micrographs show the uniform distribution of spherical grains of about 80-90 nm grain size for the pure ZnO thin films. The Ag nanoparticles are clearly visualized in SEM images of Ag-ZnO samples. The optical band gap energy decreases as the percentage of silver doping increases. Surface Plasmon Resonance (SPR) related phenomena are observed and correlated to the optical properties of Ag-ZnO thin films. The overall photoelectrochemical (PEC) performance of the samples was investigated and discussed. Moreover, the samples are more photoactive as compare to the pure ZnO sample and the sample ZnOAg15 shows the highest current. The photocurrent increases upto 249 μA cm-2 and 303 μA cm-2 in visible light and in UV illumination, respectively, and then decreases as the Ag doping increases into the film.

  9. Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hung-Wei, E-mail: hwwu@mail.ksu.edu.tw [Department of Computer and Communication, Kun Shan University, No. 949, Dawan Rd., Yongkang Dist., Tainan City 710, Taiwan (China); Yang, Ru-Yuan [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China); Hsiung, Chin-Min; Chu, Chien-Hsun [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China)

    2012-10-01

    Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm, which can be decreased to 3.8 Multiplication-Sign 10{sup -5} {Omega}-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 Multiplication-Sign 10{sup -3} {Omega}{sup -1}. It was shown that the multilayer thin films have potential for applications in optoelectronics. - Highlights: Black-Right-Pointing-Pointer High-quality Al-doped ZnO (AZO)/Ag/AZO Transparent Conducting Oxide films. Black-Right-Pointing-Pointer AZO films (30 nm) made by RF sputtering; E-beam evaporation for Ag film (5-15 nm). Black-Right-Pointing-Pointer Influence of Ag thickness on optical and electrical properties were analyzed. Black-Right-Pointing-Pointer High quality multilayer film with optimal intermediate Ag layer thickness of 10 nm. Black-Right-Pointing-Pointer 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm resistivity, 91.89% transmittance at 470 nm obtained and reproducible.

  10. Multiple surface plasmon waves in [prism/Ag/SiO2 helical thin film] Kretschmann configuration

    International Nuclear Information System (INIS)

    Two surface plasmon resonance dips in reflectance angular spectrum for a p-polarized incident beam of a [prism/Ag/SiO2 helical thin film] Kretschmann configuration are measured and compared with simulations. The simulation also shows that the angular positions of resonances due to surface plasmon waves in reflectance spectrum are sensitive to the variation of principal refractive indices of helical films. It indicates that multiple surface plasmon waves at the [Ag/SiO2 helical thin film] interface is more attractive than the traditional method of producing only one surface plasmon wave for chemical- and bio-sensing applications.

  11. Low emissivity Ag/Ta/glass multilayer thin films deposited by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sun Ho [Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City (Korea, Republic of); Lee, Kee Sun [Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City (Korea, Republic of); Green Home Energy Technology Center, Cheonan City (Korea, Republic of); Sivasankar Reddy, A. [Green Home Energy Technology Center, Cheonan City (Korea, Republic of)

    2011-09-15

    Ta is deposited on a glass substrate as an interlayer for the two-dimensional growth of Ag thin films because Ta has good thermal stability and can induce a negative surface-energy change in Ag/glass. From the transmission electron microscopy results, we concluded that the Ag crystals in the bottom layer (seemingly on Ag/Ta) were flattened; this was rarely observed in the three-dimensional growth mode. Comparing Ag/Ta/glass with Ag/glass, we found that the Ta interlayer was effective in reducing both the resistance and the emissivity, accompanied by the relatively high transmittance in the visible region. In particular, Ag(9 nm)/Ta(1 nm)/glass film showed 0.08 of the emissivity, including {approx}61% of the transmittance in the visible region (wavelength: 550 nm).

  12. Low emissivity Ag/Ta/glass multilayer thin films deposited by sputtering

    International Nuclear Information System (INIS)

    Ta is deposited on a glass substrate as an interlayer for the two-dimensional growth of Ag thin films because Ta has good thermal stability and can induce a negative surface-energy change in Ag/glass. From the transmission electron microscopy results, we concluded that the Ag crystals in the bottom layer (seemingly on Ag/Ta) were flattened; this was rarely observed in the three-dimensional growth mode. Comparing Ag/Ta/glass with Ag/glass, we found that the Ta interlayer was effective in reducing both the resistance and the emissivity, accompanied by the relatively high transmittance in the visible region. In particular, Ag(9 nm)/Ta(1 nm)/glass film showed 0.08 of the emissivity, including ∼61% of the transmittance in the visible region (wavelength: 550 nm).

  13. Growth of AgInS2 thin films by ultrasonic spray pyrolysis technique

    International Nuclear Information System (INIS)

    Silver Indium Di-sulfide (AgInS2) thin films are deposited using ultrasonic spray pyrolysis technique and the effect of substrate temperature (Ts) on film growth is studied by varying the temperature from 250 to 400 °C. From the structural analysis, orthorhombic AgInS2 phase is identified with preferential orientation along (002) plane. Further analysis with Raman revealed the coexistence of Cu–Au ordered and chalcopyrite structures in the films. Stoichiometric films are obtained at Ts of 300 °C. Above 300 °C, the film conductivity changed from p to n-type and the grain size decreased. The band gap of AgInS2 films varied from 1.55 to 1.89 eV and absorption coefficient is found to be > 104 cm−1. The films have sheet resistance in the range of 0.05 to 1300 Ω/□. Both p and n type films are prepared through this technique without any external doping. - Highlights: • Silver Indium Di-sulfide (AgInS2) films are grown using ultrasonic spray pyrolysis. • AgInS2 films showed coexistence of orthorhombic and tetragonal structures. • Band gap increased up to 1.89 eV. • 0.96 μm thick p type films are prepared without external doping. • Stoichiometry is achieved for the films prepared at 300 °C

  14. Microstructures and magnetic properties of [SiO2/FePt]5/Ag thin films

    Institute of Scientific and Technical Information of China (English)

    FAN Jiu-ping; XU Xiao-hong; JIANG Feng-xian; TIAN Bao-qiang; WU Hai-shun

    2008-01-01

    [SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO2/FePt]5/Ag films are changed into L10 and (111) mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controllingSiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 (0. 6nm)/FePt (3 nm)]5/Ag (50 nm) films and highly (001)-oriented films can be obtained in the [SiO2 (2 nm)/FePt (3 nm)]5/Ag (50 nm) films.

  15. Optical properties of silver sulphide thin films formed on evaporated Ag by a simple sulphurization method

    Energy Technology Data Exchange (ETDEWEB)

    Barrera-Calva, E., E-mail: ebc@xanum.uam.m [Departamento de Ingenieria de Procesos e hidraulica, Universidad Autonoma Metropolitana - Iztapalapa, Av. Purisima Esq. Michoacan, Col. Vicentina, Mexico, D.F., 09340 (Mexico); Ortega-Lopez, M.; Avila-Garcia, A.; Matsumoto-Kwabara, Y. [Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del IPN, Mexico DF 07360 (Mexico)

    2010-01-31

    Silver sulphide (Ag{sub 2}S) thin films were grown on the surface of silver films (Ag) deposited on glass substrate by using a simple chemical sulphurization method. According to X-ray diffraction analysis, the Ag{sub 2}S thin films display low intensity peaks at 34.48{sup o}, 36.56{sup o}, and 44.28{sup o}, corresponding to diffraction from (100), (112) and (103) planes of the acanthite phase (monoclinic). A model of the type Ag{sub 2}S/Ag/glass was deduced from spectroscopic ellipsometric measurements. Also, the optical constants (n, k) of the system were determined. Furthermore, the optical properties as solar selective absorber for collector applications were assessed. The optical reflectance of the Ag{sub 2}S/Ag thin film systems exhibits the expected behavior for an ideal selective absorber, showing a low reflectance in the wavelength range below 2 {mu}m and a high reflectance for wavelengths higher than that value. An absorptance about 70% and an emittance about 3% or less were calculated for several samples.

  16. Systematic Surface Phase Transition of Ag Thin Films by Iodine Functionalization at Room Temperature: Evolution of Optoelectronic and Texture Properties

    OpenAIRE

    Bashouti, Muhammad Y.; Razieh Talebi; Thaer Kassar; Arashmid Nahal; Jürgen Ristein; Tobias Unruh; Christiansen, Silke H.

    2016-01-01

    We show a simple room temperature surface functionalization approach using iodine vapour to control a surface phase transition from cubic silver (Ag) of thin films into wurtzite silver-iodid (β-AgI) films. A combination of surface characterization techniques (optical, electronical and structural characterization) reveal distinct physical properties of the new surface phase. We discuss the AgI thin film formation dynamics and related transformation of physical properties by determining the wor...

  17. Irradiation induced improvement in crystallinity of epitaxially grown Ag thin films on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Takahiro, Katsumi; Nagata, Shinji; Yamaguchi, Sadae [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

    1997-03-01

    We report the improvement in crystallinity of epitaxially grown Ag films on Si(100) substrates with ion irradiation. The irradiation of 0.5 MeV Si ions to 2x10{sup 16}/cm{sup 2} at 200degC, for example, reduces the channeling minimum yield from 60% to 6% at Ag surface. The improvement originates from the decrease of mosaic spread in the Ag thin film. In our experiments, ion energy, ion species and irradiation temperature have been varied. The better crystallinity is obtained as the higher concentration of defect is generated. The mechanism involved in the irradiation induced improvement is discussed. (author)

  18. NUMERICAL CHARACTERIZATION OF CURRENT-INDUCED CHANGES IN SURFACE MORPHOLOGY OF THIN Ag FILMS

    Institute of Scientific and Technical Information of China (English)

    A. V. Panin; H.-G. Chun; A.R. Shugurov; S. V. Panin; N. V. Pykhtin

    2003-01-01

    The changes in surface topography of thin conducting Ag films under high-density current condition are studied by optical and scanning tunnelling microscopy (STM).It is established that the loss of conductivity in specimens occurs through depletion of the material due to their overheating and electromigration process. It has been shown that the r.m.s. Roughness, the fractal dimension of voids and the fractal dimension of the surface allow complete numerical characterization of surface topography changes in thin Ag films.

  19. A study of Ag/Ag(100) thin film growth with scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wen, J.

    1995-11-01

    Thin films are attracting more and more attention in both the industrial and scientific communities. Many applications of thin films have been developed in industry. By using various growth methods, thin films can be used in optics, microelectronic devices, magnetic recording media, and as protective coatings. In order to improve existing applications and to find new ones, it is essential to understand what makes them so useful in applications and what factors affect their properties. Therefore, an understanding of film growth processes is necessary. Scientifically, many fundamental interactions, such as the interaction between the atoms that comprise the film and substrate, or the interaction between film atoms, are of great interest to surface scientists; studies of these interactions can provide dramatic insights into the nature of thin films and therefore, can further drive technology forward. In every application, the film structures, including morphology and microstructure, and adhesion between film and substrate are critical to the film`s properties and therefore its performance. Studies of the mechanisms that control film morphology, microstructure and adhesion thus are important. Film growth kinetics can provide important information regarding the film structure and adhesion. Film growth is an atomistic process. The chemistry and physics of the system can be better understood if the information provided is at an atomic level.

  20. Patterned PPy Polymer and PPy/Ag Nanocomposites Thin Films by Photo-DLICVD

    OpenAIRE

    Manole, Claudiu Constantin; Maury, Francis; Demetrescu, Ioana

    2013-01-01

    This work deals with the deposition of both undoped (insulator) and extrinsically Ag-doped (conductive) polypyrrole (PPy) coatings by an original Photo-DLICVD process. The uniform and conformal coverage of PPy thin films on both Si(100) wafer and liquid micro-droplets forming blisters is investigated. A self-ordered surface patterning of the blisters is achieved and discussed in relation with the substrate nature. By changing the precursor chemistry in this CVD process, conductive PPy/Ag nano...

  1. L10-ordered high coercivity (FePt)Ag-C granular thin films for perpendicular recording

    International Nuclear Information System (INIS)

    We report (FePt)Ag-C granular thin films for potential applications to ultrahigh density perpendicular recording media, that were processed by co-sputtering FePt, Ag, and C targets on MgO underlayer deposited on thermally oxidized Si substrates. (FePt)1-xAgx-yvol%C (0oC. We found that the Ag additions improved the L10 ordering and the granular structure of the FePt-C films with the perpendicular coercivity ranging from 26 to 37 kOe for the particle size of 5-8 nm. The (FePt)0.9Ag0.1-50vol%C film showed the optimal magnetic properties as well as an appropriate granular morphology for recording media, i.e., average grain size of Dav=6.1 nm with the standard deviation of 1.8 nm.

  2. The effect of AgNO3 concentration on formation of Ag nanoparticles in Sol-Gel derived Ag-SiO2 thin films

    Directory of Open Access Journals (Sweden)

    A Babapour

    2007-12-01

    Full Text Available   In this investigation, Ag-SiO2 thin films with different concentrations of Ag (0.2, 0.4, 1.6 and 8% has been fabricated on soda-lime glass substrate using sol-gel method. After an annealing process, physical and chemical properties of the deposited silica films containing Ag nanoparticles have been studied including optical, topographical structural, morphological and size of the nanoparticle as well as their distribution using UV-visble spectrophotometery, atomic force microscopy (AFM, scanning electron microscopy (SEM, and transmission electron microscopy (TEM techniques, respectively. Based on our data analysis, the Ag nanoparticles did not form in the samples with low (0.2% and high Ag concentrations (8%, without any suitable annealing process. Instead, the nanoparticles were formed easily for the intermediate Ag concentrations. In fact, for the the low and high Ag concentration, the Ag nanoparticles formed at the annealing temperature of 200 º C. In addition, according to TEM observations, the minimum average size of the synthesized particles were determined about 4 hm for the thin films containing 0.2% Ag concentration.

  3. Enhancement of light trapping in thin-film solar cells through Ag

    Institute of Scientific and Technical Information of China (English)

    Yiming Bai; Han Zhang; Jun Wang; Nuofu Chen; Jianxi Yao; Tianmao Huang; Xingwang Zhang; Zhigang Yin; Zhen Fu

    2011-01-01

    Forward-scattering efficiency (FSE) is first proposed when an Ag nanoparticle serves as the light-trapping structure for thin-film (TF) solar cells because the Ag nanoparticle's light-trapping efficiency lies on the light-scattering direction of metal nanoparticles. Based on FSE analysis of Ag nanoparticles with radii of 53 and 88 nm, the forward-scattering spectra and light-trapping efficiencies are calculated. The contributions of dipole and quadrupole modes to light-trapping effect are also analyzed quantitatively. When the surface coverage of Ag nanoparticles is 5%, light-trapping efficiencies are 15.5% and 32.3%, respectively, for 53- and 88-nm Ag nanoparticles. Results indicate that the plasmon quadrupole mode resonance of Ag nanoparticles could further enhance the light-trapping effect for TF solar cells.%@@ Forward-scattering efficiency (FSE) is first proposed when an Ag nanoparticle serves as the light-trapping structure for thin-film (TF) solar cells because the Ag nanoparticle's light-trapping efficiency lies on the light-scattering direction of metal nanoparticles.Based on FSE analysis of Ag nanoparticles with radii of 53 and 88 nm, the forward-scattering spectra and light-trapping efficiencies are calculated.The contributions of dipole and quadrupole modes to light-trapping effect are also analyzed quantitatively.When the surface coverage of Ag nanoparticles is 5%, light-trapping efficiencies are 15.5% and 32.3%, respectively, for 53- and 88-nm Ag nanoparticles.Results indicate that the plasmon quadrupole mode resonance of Ag nanoparticles could further enhance the light-trapping effect for TF solar cells.

  4. The role of Ag in (Ag,Cu)2ZnSnS4 thin film for solar cell application

    International Nuclear Information System (INIS)

    Highlights: • (Ag,Cu)2ZnSnS4 thin film was synthesized through metallic stacking layers. • Ag incorporation reduces the size and amount of voids at back contact. • Less planar defects and Cu vacancy are formed in the (Ag,Cu)2ZnSnS4. • Solar cell performance was improved with Ag incorporation. - Abstract: Recently, Ag incorporation into Cu(In,Ga)Se2 structure was found to benefit the solar cell performance. However, (Ag,Cu)2ZnSnS4 used as the solar cell absorber is not widely reported even though Ag2ZnSnS4 has shown much better photocatalysts activity for H2 evolution than Cu2ZnSnS4. In this paper, (Ag,Cu)2ZnSnS4 thin film solar cell was synthesized through sulfurization of Ag/Zn/Cu/Sn metallic stacked layers. In order to understand the actual role of Ag in the Cu2ZnSnS4 structure, the changing chemical environment, microstructure and intragrain defect due to the Ag incorporation, were studied by X-ray photoelectron spectroscopy and transmission electron microscopy. After sulfurization, Ag is uniformly distributed in the absorber and is incorporated into Cu2ZnSnS4 crystal structure but no obvious change of the Cu2ZnSnS4 chemical environment is detected. A large density of voids is formed at the Cu2ZnSnS4/Mo interface and some of these voids are found to be coated with CdS which is believed to be detrimental to Cu2ZnSnS4 device performance. In contrast, Ag incorporation reduces the size and amount of voids and thus effectively eliminates CdS deposited at back contact region. Moreover, fewer planar defects and Cu vacancies are formed in the (Ag,Cu)2ZnSnS4 sample than Cu2ZnSnS4 sample as suggested by electron diffraction patterns. Therefore, improved solar cell performance should result from the formation of (Ag,Cu)2ZnSnS4 structure

  5. Si Underlayer Induced Nano-Ablation in AgInSbTe Thin Films

    Institute of Scientific and Technical Information of China (English)

    JIAO Xin-Bing; WEI Jing-Song; GAN Fu-Xi

    2008-01-01

    AgInSbTe/Si thin films on glass substrates are prepared by dc magnetron sputtering at room temperature.Using Si underlayer as the thermal diffusion layer,the super-resolution nano-ablation holes with a size of 70 nm in the AgInSbTe phase change films are obtained by a far-field focused laser experimental setup,with laser wavelength 405 nm and objective-lens numerical aperture D.90.The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.

  6. SPR sensitivity of silver nanorods in CsBr-Ag nanocomposite thin films

    Science.gov (United States)

    Lovkush; Ravikant, Chhaya; Arun, P.; Kumar, Kuldeep

    2016-07-01

    We have investigated the optical and morphological properties of CsBr-Ag complex thin films deposited by thermal evaporation on glass substrate. By varying the thickness of the film with fixed mass ratio of cesium bromide and silver, we observed a broad absorption peak in the visible region from 350 to 450 nm corresponding to the transverse and longitudinal surface plasmon resonance (SPR) mode. Red shift is observed, with varying film thickness, in SPR peak position corresponding to longitudinal mode with no significant change in transverse mode due to variation in the aspect ratio of the silver nano crystalline grains. Scanning electron microscope and EDX revealed the formation of silver nanorods in film samples. Such, stable and tunable CsBr-Ag films can be used in optical filters.

  7. Superhydrophobic Ag decorated ZnO nanostructured thin film as effective surface enhanced Raman scattering substrates

    Science.gov (United States)

    Jayram, Naidu Dhanpal; Sonia, S.; Poongodi, S.; Kumar, P. Suresh; Masuda, Yoshitake; Mangalaraj, D.; Ponpandian, N.; Viswanathan, C.

    2015-11-01

    The present work is an attempt to overcome the challenges in the fabrication of super hydrophobic silver decorated zinc oxide (ZnO) nanostructure thin films via thermal evaporation process. The ZnO nanowire thin films are prepared without any surface modification and show super hydrophobic nature with a contact angle of 163°. Silver is further deposited onto the ZnO nanowire to obtain nanoworm morphology. Silver decorated ZnO (Ag@ZnO) thin films are used as substrates for surface enhanced Raman spectroscopy (SERS) studies. The formation of randomly arranged nanowire and silver decorated nanoworm structure is confirmed using FESEM, HR-TEM and AFM analysis. Crystallinity and existence of Ag on ZnO are confirmed using XRD and XPS studies. A detailed growth mechanism is discussed for the formation of the nanowires from nanobeads based on various deposition times. The prepared SERS substrate reveals a reproducible enhancement of 3.082 × 107 M for Rhodamine 6G dye (R6G) for 10-10 molar concentration per liter. A higher order of SERS spectra is obtained for a contact angle of 155°. Thus the obtained thin films show the superhydrophobic nature with a highly enhanced Raman spectrum and act as SERS substrates. The present nanoworm morphology shows a new pathway for the construction of semiconductor thin films for plasmonic studies and challenges the orderly arranged ZnO nanorods, wires and other nano structure substrates used in SERS studies.

  8. Polar Kerr spectroscopic magneto-optics in Au/Co-Ag/Ag granular thin films on glass: Experiments and simulation

    Energy Technology Data Exchange (ETDEWEB)

    Borcia, I.D. [Faculty of Physics, Alexandru Ioan Cuza University, 6600 Iasi (Romania); Beauvillain, P. [Institut d' Electronique Fondamentale, Universite Paris-Sud, UMR CNRS 8622, 91405 Orsay Cedex (France)]. E-mail: Pierre.Beauvillain@ief.u-psud.fr; Bartenlian, B. [Institut d' Electronique Fondamentale, Universite Paris-Sud, UMR CNRS 8622, 91405 Orsay Cedex (France); Gogol, P. [Institut d' Electronique Fondamentale, Universite Paris-Sud, UMR CNRS 8622, 91405 Orsay Cedex (France); Megy, R. [Institut d' Electronique Fondamentale, Universite Paris-Sud, UMR CNRS 8622, 91405 Orsay Cedex (France)

    2006-06-15

    In Au/Co-Ag/Ag granular thin films, linear polar magneto-optical Kerr spectra were measured in the 250-800 nm wavelength range. These experimental spectra were compared to magneto-optical (MO) simulations using an optical multilayer model based on matrix formalism. MO simulations using homogenous layers of uniform thickness led to a great difference of amplitude and shape between the measured and simulated curves. Atomic force microscopy and scanning electron microscopy images were used to estimate the granular structure of the samples and determine the mean diameter and height, respectively of the Ag and Ag-Co islands of each layer. Using this granular structure in our MO simulations, a reasonable agreement between the simulations and MO experiments was obtained for both the Kerr rotation and ellipticity spectra.

  9. Photoelectron spectroscopy study of thin Ag films deposited on to amorphous In–Ga–Zn–O surface

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Se Jun [Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Baik, Jaeyoon; Ha, Taekyun; Park, Chong Do [Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Shin, Hyun-Joon, E-mail: shj001@postech.ac.kr [Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Chung, JaeGwan; Lee, Jaecheol [A E Group, Samsung Advanced Institute of Technology, Giheung-Gu, Yongin-Si, GyeingGi-Do 449-712 (Korea, Republic of)

    2014-11-03

    Ag was thermally evaporated onto amorphous In–Ga–Zn–O (a-IGZO) thin film, and the Ag-thickness (< 0.3 nm)-dependent chemical states of the Ag-deposited a-IGZO thin-film surfaces were investigated by high-resolution X-ray photoelectron spectroscopy. As Ag layer thickness increased, Ag 3d shifted towards the lower binding energy (BE) side and In 3d developed a lower-BE component; however, O 1s, Ga 3d, and Zn 3d showed much smaller spectral feature changes than Ag 3d or In 3d. The analysis suggests that Ag atoms preferentially interact and share electrons with In atoms. The Ag 4d split feature at the valence band and the metallic states near the Fermi edge were noticeably visible when the Ag thickness was greater than 0.1 nm. - Highlights: • Ag was deposited on a-IGZO thin film using thermal evaporation method. • Chemical state changes of Ag-deposited a-IGZO were investigated by XPS. • As Ag layer thickness increased, In 3d developed a lower-BE component. • As Ag layer thickness increased, Ag 3d shifted towards the lower BE side. • Ag atoms preferentially interact and share electrons with In atoms.

  10. Fabrication and properties of AgInTe2 thin films

    International Nuclear Information System (INIS)

    The results of studying the structure, composition and optical properties of thin films of the AgInTe2 ternary system, obtained through the method of pulsed laser evaporation, are presented for the first time. It is established, that the above films are characterized by chalcopyrite structure and their composition corresponds to the composition of crystals, used as a target. The interzone transition energies and values of crystalline and spin-orbital fission are calculated. The optical characteristics were determined from the equations for reflection and transmission in the air/film/glass substrate/air system

  11. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Tamulevičius, Tomas, E-mail: Tomas.Tamulevicius@ktu.lt; Tamulevičienė, Asta; Virganavičius, Dainius; Vasiliauskas, Andrius; Kopustinskas, Vitoldas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-12-15

    Highlights: • CF{sub 4}/O{sub 2} dry etching of DLC:Ag films revealed the embedded Ag nanoparticles. • Plasma processed samples with more than 5 at.% Ag demonstrated Ostwald ripening. • 4 μm period patterns in aluminum and photoresist were imposed in the DLC:Ag film. • Different micro patterns are formed depending on the selected processing route. - Abstract: We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF{sub 4}/O{sub 2} plasma chemical etching and Ar{sup +} sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar{sup +} in C{sub 2}H{sub 2} gas atmosphere. Films with different silver content (0.6–12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet–visible light (UV–VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF{sub 4}/O{sub 2} mixture plasma for 2–6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C{sub 2}H{sub 2}/Ar ratio or during following plasma chemical etching. The plasma etching enabled to reveal the silver filler particle size distribution and to control silver content on the surface that was found to be dependent on Ostwald ripening process of silver nano-clusters. Employing contact lithography and 4 μm period mask in photoresist or aluminum the films were patterned employing CF{sub 4}/O{sub 2} mixture plasma chemical etching, direct Ar{sup +} sputtering or combined etching processes. It is shown that different processing recipes result in different final grating structures. Selective carbon etching in CF{sub 4}/O{sub 2} gas mixture with

  12. One step 'dip' and 'use' Ag nanostructured thin films for ultrahigh sensitive SERS Detection.

    Science.gov (United States)

    Rajkumar, Kanakaraj; Jayram, Naidu Dhanpal; Mangalaraj, Devanesan; Rajendra Kumar, Ramasamy Thangavelu

    2016-11-01

    A simple one step galvanic displacement method which involves dipping of the silicon substrate in the AgNO3/HF solution and using it for SERS application without any further process is demonstrated. The size and shape of the Ag nanoparticles changes as the deposition time is increased. Initially the shape of the particles was nearly spherical and as it grows, becomes oblong and then coalesce to form a discontinuous film with vertically grown hierarchical Ag nanostructures. The sizes of the deposited particles were in the ranges from 30nm to a discontinuous film. It also demonstrated a highly sensitive chemical detection by surface-enhanced Raman scattering of rhodamine 6G dye, down to 10(-16)M concentration. Prepared samples were able to detect lower concentrations of Melamine. Discontinuous thin films with hierarchical Ag nanostructures were obtained for 5min Ag deposition. The formation of Hot spots between the discontinuous islands and also along the hierarchical structures is responsible for the high SERS enhancement. This simple one step, fast, non-lithographic and cost effective method can be applied for various label free detection of analytes of importance.

  13. Effects of thermal annealing on the magnetic interactions in nanogranular Fe-Ag thin films

    Energy Technology Data Exchange (ETDEWEB)

    Alonso, J.; Fdez-Gubieda, M.L.; Svalov, A. [Departamento de Electricidad y Electronica, Universidad del Pais Vasco (UPV/EHU), Campus de Leioa, 48940 Leioa (Spain); Meneghini, C. [Dipartimento di Fisica ' E. Amaldi' , Universita degli Studi Roma Tre, 00146 Roma (Italy); Orue, I. [SGIker, Universidad del Pais Vasco (UPV/EHU), Campus de Leioa, 48940 Leioa (Spain)

    2012-09-25

    Highlights: Black-Right-Pointing-Pointer Fe{sub x}Ag{sub 100-x} granular thin films with competing interactions (25 {<=} x{<=} 35). Black-Right-Pointing-Pointer Annealing up to 200 Degree-Sign C mainly modifies the interface of Fe nanoparticles. Black-Right-Pointing-Pointer Annealing reduces RKKY interactions in Fe{sub 25}Ag{sub 75}. Black-Right-Pointing-Pointer Annealing favors exchange interactions and ferromagnetic order in Fe{sub 35}Ag{sub 65}. - Abstract: In this paper we have studied, by analysing the evolution of the magnetic behaviour during thermal treatment, the role of the interparticle magnetic interactions in Fe{sub x}Ag{sub 100-x} granular thin films prepared by sputtering deposition technique. Two compositions have been selected: x = 25 and 35, below and around the magnetic percolation of the system, respectively, according to our previous works. The structure of these thin films has been studied by X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) measurements. To analyse the magnetic behaviour, DC magnetic measurements have been carried out after progressively annealing the samples at different temperatures (0 {<=} T{sub ann} {<=} 200 Degree-Sign C). These measurements have revealed that, upon thermal treatment, the frustrated state at low temperatures (T < 80 K) for the x = 25 sample tends to disappear, probably due to the weakening of RKKY interactions after the segregation of soluted Fe atoms in the Ag matrix. However, dipolar interactions are not affected by the annealing. On the contrary, at x = 35, around the magnetic percolation, the annealing gives rise to an increasingly ordered interface, thereby enhancing the transfer of the direct exchange interactions.

  14. Optical and electrical characterization of AgInS{sub 2} thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Calixto-Rodriguez, M., E-mail: manuela@fis.unam.mx [Instituto de Ciencias Fisicas-Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Martinez, H. [Instituto de Ciencias Fisicas-Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Calixto, M.E. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apartado Postal J-48, 72570, Puebla, Puebla (Mexico); Pena, Y. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba s/n, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Martinez-Escobar, Dalia [Centro de Investigacion en Energia-Universidad Nacional Autonoma de Mexico, 62580, Temixco, Morelos (Mexico); Tiburcio-Silver, A. [Instituto Tecnologico de Toluca-SEP, Apartado Postal 20, 52176, Metepec 3, Estado de Mexico (Mexico); Sanchez-Juarez, A. [Centro de Investigacion en Energia-Universidad Nacional Autonoma de Mexico, 62580, Temixco, Morelos (Mexico)

    2010-10-25

    Silver indium sulfide (AgInS{sub 2}) thin films have been prepared by spray pyrolysis (SP) technique using silver acetate, indium acetate, and N, N-dimethylthiourea as precursor compounds. Films were deposited onto glass substrates at different substrate temperatures (T{sub s}) and Ag:In:S ratios in the starting solutions. Optical transmission and reflection as well as electrical measurements were performed in order to study the effect of deposition parameters on the optical and electrical properties of AgInS{sub 2} thin films. X-ray diffraction measurements were used to identify the deposited compounds. It was found that different compounds such as AgInS{sub 2}, Ag{sub 2}S, In{sub 2}O{sub 3}, and In{sub 2}S{sub 3} can be grown only by changing the Ag:In:S ratio in the starting solution and T{sub s}. So that, by carefully selecting the deposition parameters, single phase AgInS{sub 2} thin films can be easily grown. Thin films obtained using a molar ratio of Ag:In:S = 1:1:2 and T{sub s} = 400 {sup o}C, have an optical band gap of 1.9 eV and n-type electrical conductivity with a value of 0.3 {Omega}{sup -1} cm{sup -1} in the dark.

  15. Electrical and photoconductivity studies on AgSbSe2 thin films

    Science.gov (United States)

    Namitha Asokan, T.; Urmila, K. S.; Pradeep, B.

    2015-02-01

    Silver antimony selenide thin films have been deposited on ultrasonically cleaned glass substrate at a vacuum of 10-5 torr using reactive evaporation technique. The preparative parameters like substrate temperature and incident fluxes have been properly controlled in order to get highly reproducible compound films. The polycrystalline nature of the sample is confirmed using XRD. The dependence of the electrical conductivity on the temperature has also been studied. The prepared AgSbSe2 samples show p-type conductivity. The samples show a little photoresponse.

  16. Systematic Surface Phase Transition of Ag Thin Films by Iodine Functionalization at Room Temperature: Evolution of Optoelectronic and Texture Properties.

    Science.gov (United States)

    Bashouti, Muhammad Y; Talebi, Razieh; Kassar, Thaer; Nahal, Arashmid; Ristein, Jürgen; Unruh, Tobias; Christiansen, Silke H

    2016-01-01

    We show a simple room temperature surface functionalization approach using iodine vapour to control a surface phase transition from cubic silver (Ag) of thin films into wurtzite silver-iodid (β-AgI) films. A combination of surface characterization techniques (optical, electronical and structural characterization) reveal distinct physical properties of the new surface phase. We discuss the AgI thin film formation dynamics and related transformation of physical properties by determining the work-function, dielectric constant and pyroelectric behavior together with morphological and structural thin film properties such as layer thickness, grain structure and texture formation. Notable results are: (i) a remarkable increase of the work-function (by 0.9 eV) of the Ag thin layer after short a iodine exposure time (≤60 s), with simultaneous increase of the thin film transparency (by two orders of magnitude), (ii) pinning of the Fermi level at the valance band maximum upon iodine functionalization, (iii) 84% of all crystallites grain were aligned as a result of the evolution of an internal electric field. Realizing a nano-scale layer stack composed of a dielectric AgI layer on top of a metallic thin Ag layer with such a simple method has some technological implications e.g. to realize optical elements such as planar optical waveguides. PMID:26899434

  17. Electrical Properties of Al, Ag, Cu, Ti and SS Thin Film for Electrode of Solar Cell

    International Nuclear Information System (INIS)

    The Al, Ag, Cu, Ti and SS materials were deposited on the surface of glass substrate using plasma DC sputtering technique. The deposition process was done with the following plasma parameters : deposition time, gas pressure and substrate temperature with the aim to obtain a good conductance of thin films. Variation of substrate deposition time was 1 - 15 minutes, gas pressure was 5x10-2 - 7x10-2 torr and of temperature was 100 - 300 oC. The resistance measurement has been done by four points probes and the conductivity was calculated using mathematic formulation. It was obtained that the minimum resistance in the order of R = 0.07 Ω, was found at Ag materials and this was obtained at the following plasma parameters : deposition time 15 minutes, gas pressure 6x10-2 torr and temperature 300 oC, while, the resistance of : Cu, Al, Ti and SS materials were R = 0.13 Ω, R = 450 Ω, R = 633 Ω, R = 911 Ω respectively, It could be concluded that the Ag thin film has a minimum resistance, high conductivity compared to the other materials Al, Cu, Ti and SS. Ag is therefore the suitable material for applying as electrode of solar cell. (author)

  18. Synthesis of Ag-TiO{sub 2} composite nano thin film for antimicrobial application

    Energy Technology Data Exchange (ETDEWEB)

    Yu Binyu; Guo Qiuquan; Yang Jun [Biomedical Engineering Graduate Program, University of Western Ontario, London, ON, N6A 5B9 (Canada); Leung, Kar Man [Department of Mechanical and Materials Engineering, University of Western Ontario, London, ON, N6A 5B9 (Canada); Lau, Woon Ming [Surface Science Western, University of Western Ontario, London, ON, N6A 5B9 (Canada)

    2011-03-18

    TiO{sub 2} photocatalysts have been found to kill cancer cells, bacteria and viruses under mild UV illumination, which offers numerous potential applications. On the other hand, Ag has long been proved as a good antibacterial material as well. The advantage of Ag-TiO{sub 2} nanocomposite is to expand the nanomaterial's antibacterial function to a broader range of working conditions. In this study neat TiO{sub 2} and Ag-TiO{sub 2} composite nanofilms were successfully prepared on silicon wafer via the sol-gel method by the spin-coating technique. The as-prepared composite Ag-TiO{sub 2} and TiO{sub 2} films with different silver content were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) to determine the topologies, microstructures and chemical compositions, respectively. It was found that the silver nanoparticles were uniformly distributed and strongly attached to the mesoporous TiO{sub 2} matrix. The morphology of the composite film could be controlled by simply tuning the molar ratio of the silver nitrate aqueous solution. XPS results confirmed that the Ag was in the Ag{sup 0} state. The antimicrobial effect of the synthesized nanofilms was carried out against gram-negative bacteria (Escherichia coli ATCC 29425) by using an 8 W UV lamp with a constant relative intensity of 0.6 mW cm{sup -2} and in the dark respectively. The synthesized Ag-TiO{sub 2} thin films showed enhanced bactericidal activities compared to the neat TiO{sub 2} nanofilm both in the dark and under UV illumination.

  19. Preparation of nano-Ag/TiO2 thin-film

    Institute of Scientific and Technical Information of China (English)

    PENG Bing; WANG Jia; CHAI Li-yuan; MAO Ai-li; WANG Yun-yan

    2008-01-01

    Steady TiO2 water-sol was prepared by peptization and the effects of pH value, temperature, concentration of colloid and peptizator on sol were investigated. Laser grain analyzer was used to verify nano-particles in the sol. The photocatalytic degradation ratio and antibacterial property of nano-Ag/TiO2 thin-film on ceramics were used as the main index in addition to XRD analysis. The effect of film layers, embedding Ag+, annealing temperature and time on the degradation ratio and antibacterial property was studied. The temperature 30-80 ℃, pH 1.2-2.0, concentrations of 0.05-0.3 mol/L sol and 5% HNO3 would be the optimal parameters for the TiO2 water-sol preparation. The nano-Ag/TiO2 film of three layers with 3% AgNO3 embedded and treated at 350 ℃ for 2 h exhibits good performance. The elementary research on the kinetics of degradation shows that the reactions are on the first order kinetics equation.

  20. Thermal stability and partial dewetting of crystalline organic thin films: 3,4,9,10-perylenetetracarboxylic dianhydride on Ag(111)

    OpenAIRE

    Krause, B.; Dürr, A. C.; Schreiber, F.; Dosch, H.; Seeck, O

    2003-01-01

    The thermal stability and dewetting effects of crystalline organic thin films on inorganic substrates have been investigated for a model system for organic epitaxy, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on Ag(111). The thin films deposited under a variety of growth conditions have been annealed stepwise and studied by in situ x-ray diffraction and noncontact atomic force microscopy. It has been found that comparatively smooth films deposited at temperatures T(g)less than or sim...

  1. Optical and structural properties of Cr and Ag thin films deposited on glass substrate

    Science.gov (United States)

    Rauf, A.; Ahmed, K.; Nasim, F.; Khan, A. N.; Gul, A.

    2016-08-01

    Most of the rotating or noting patterns are being developed by using silver plating through chemical coating. Silver layers deteriorate with the passage of time and become less reflective while undergo through cleaning process due to its softness and the results become unpredictable. In this paper an alternate method for development of above mentioned pattern has been demonstrated. Chromium (Cr) and Silver (Ag) thin films of 200nm and 160nm thick respectively have been realized using electron beam evaporation (PVD technique) on quartz substrate. Structural analysis has been carried out by XRD and SEM while optical transmission/reflection has been studied using spectrophotometer. XRD analysis shows that Ag coated thin films exhibit FCC structure while Cr coated thin films reveals a BCC structure. SEM analysis shows almost smooth and uniform surfaces in both cases. After passing through high and low temperature cycles it was found that the results of pattern structures developed by chromium coating were more reliable than obtained through silver platting process.

  2. Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Nazir, Adnan, E-mail: adnan.nazir@iit.it [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Toma, Andrea [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Shah, Nazar Abbas [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Panaro, Simone [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Butt, Sajid [Department of Materials Science and Engineering, Institute of Space Technology (IST), Islamabad 44000 (Pakistan); School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Sagar, Rizwan ur Rehman [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Raja, Waseem [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Rasool, Kamran [Micro and Nano Devices Group, Department of Metallurgy and Materials Engineering Pakistan, Institute of Engineering and Applied Sciences (PIEAS), P.O. Nilore, Islamabad 45650 (Pakistan); Maqsood, Asghari [Department of Physics, Air University, Islamabad (Pakistan)

    2014-10-01

    Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (10{sup 6} Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (10{sup 3} Ω cm) against a 20% cut in optical transmission.

  3. Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

    International Nuclear Information System (INIS)

    Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (106 Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (103 Ω cm) against a 20% cut in optical transmission

  4. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  5. Optical properties of TiO2 thin films after Ag ion implantation

    International Nuclear Information System (INIS)

    Metal plasma ion implantation has being successfully developed for improving the electronic and optical properties of semiconductor materials. Prior to deposition, a TiO2 colloidal suspension was synthesized by microwave-induced thermal hydrolysis of the titanium tetrachloride aqueous solution. The TiO2 thin film was optimized to obtain a high-purity crystalline anatase phase by calcinations at 550 deg. C. The TiO2 coating was uniform without aggregation, which provided good photo conversion efficiency. Ag ion implantation into the as-calcined TiO2 thin films was conducted with 1 x 1015 ∼ 1 x 1016 ions/cm2 at 40 keV. The peak position and intensity of the photoluminescence and UV-Vis absorption spectra are quite sensitive to Ag doping. The optical characterization showed a shift in optical absorption wavelength towards infrared ray side, which was correlated with the structure variation of the Ag+ implanted TiO2. Due to the strong capability of forming compounds between the energetic silver ions and TiO2, the photoluminescence emission and UV-Vis absorption efficiencies were improved.

  6. Annealing-Induced Modifications in Physicochemical and Optoelectronic Properties of Ag-Doped Nanostructured CdS Thin Films

    Directory of Open Access Journals (Sweden)

    Vidya S. Taur

    2012-01-01

    Full Text Available The Ag-doped nanostructured CdS thin films are grown by simple, cost effective chemical ion exchange technique at room temperature on ITO-coated glass substrate. These as grown thin films are annealed at 100, 200, 300, and 400°C in air atmosphere for 1 hour. To study the effect of annealing on physicochemical and optoelectronic properties, these as grown and annealed thin films are characterized for structural, compositional, morphological, optical, and electrical properties. X-ray diffraction (XRD pattern reveals polycrystalline nature of these thin films with increase in crystallite size from 6.4 to 11.2 nm, from XRD the direct identification of Ag doping in CdS thin films cannot be judged, while shift in characteristics peak position of CdS is observed. The Raman spectrum represents increase in full width at half maxima and intensity of characteristic peak, confirming the material modification upon annealing treatment. Presence of Cd, Ag, and S in energy dispersive X-ray analysis spectra (EDAX confirms expected elemental composition in thin films. Scanning electron microscopy (SEM images represent grain growth and agglomeration upon annealing. Red shift in optical absorbance strength and energy band gap values from 2.28 to 2.14 eV is obtained. I-V response obtained from as grown and annealed thin films shows an enhancement in photosensitivity from 72% to 96% upon illumination to 100 mW/cm2 light source.

  7. Synthesis and Characterization of Varying Concentrations of Ag-doped ZnO Thin Films

    Science.gov (United States)

    Hachlica, Justin; Wadie-Ibrahim, Patrick; Sahiner, M. Alper

    Silver doped ZnO is a promising compound for photovoltaic solar cell use. Doping this compound with varying amounts of silver will theoretically make this type of thin film more efficient by reducing the overall resistance and increasing the voltage and current output. The extent of this promise is being tested experimentally, by analysis of both the electrical and the surface roughness properties of the cells. Ag-doped Zinc Oxide is deposited by method of Pulsed Laser Deposition (PLD) onto Indium Tin Oxide (ITO) coated Glass. Annealing effects were also observed by varying the temperature at which the annealing occurred after synthesis of the sample. Thickness is confirmed by use of Ellipsometery. X-Ray Diffraction (XRD) measurements confirmed a ZnO crystal structure on the thin films. The active dopant carrier concentrations were determined using a Hall Effect Measuring System. Finally, the photovoltaic properties of the film are recorded by using a Keithley Source Meter. The structural characterization and electrical results of the effect of Ag doping on ZnO will then be discussed.

  8. Speciation and Lability of Ag-, AgCl- and Ag2S-Nanoparticles in Soil Determined by X-ray Absorption Spectroscopy and Diffusive Gradients in Thin Films

    Science.gov (United States)

    Long-term speciation and lability of silver (Ag-), silver chloride (AgCl-) and silver sulfide nanoparticles (Ag2S-NPs) in soil were studied by X-ray absorption spectroscopy (XAS), and newly developed "nano" Diffusive Gradients in Thin Films (DGT) devices. These nano-D...

  9. Microwave sintering of Ag-nanoparticle thin films on a polyimide substrate

    Directory of Open Access Journals (Sweden)

    S. Fujii

    2015-12-01

    Full Text Available Ag-nanoparticle thin films on a polyimide substrate were subjected to microwave sintering by use of a single-mode waveguide applicator. A two-step sintering process was employed. First, at low conductivities of the film, the film sample was placed at the site of the maximum electric field and subjected to microwave irradiation. Second, when the conductivity of the film increased, the film sample was placed at the site of the maximum magnetic field and again subjected to microwave irradiation. The microwave sintering process was completed within 1.5 min, which is significantly lower than the time required for the oven heating process. The resulting conductivity of the film, albeit only 30% of that of the bulk material, was seven times that of a film annealed at the same temperature in a furnace. Scanning electron microscopy images revealed that the nanoparticles underwent both grain necking and grain growth during microwave sintering. In addition, this sintering process was equivalent to the oven heating process performed at a 50 °C higher annealing temperature. An electromagnetic wave simulation and a heat transfer simulation of the microwave sintering process were performed to gain a thorough understanding of the process.

  10. Microwave sintering of Ag-nanoparticle thin films on a polyimide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Fujii, S., E-mail: fujii.s.ap@m.titech.ac.jp [Department of Applied Chemistry, Tokyo Institute of Technology, Tokyo 152-8522 (Japan); Department of Information and Communication System Engineering, National Institute of Technology, Okinawa College, Nago, Okinawa 905-2192 (Japan); Kawamura, S.; Maitani, M. M.; Suzuki, E.; Wada, Y. [Department of Applied Chemistry, Tokyo Institute of Technology, Tokyo 152-8522 (Japan); Mochizuki, D. [Interdisciplinary Cluster for Cutting Edge Research, Center for Energy and Environmental Science, Shinshu University, Ueda, Nagano 386-8567 (Japan)

    2015-12-15

    Ag-nanoparticle thin films on a polyimide substrate were subjected to microwave sintering by use of a single-mode waveguide applicator. A two-step sintering process was employed. First, at low conductivities of the film, the film sample was placed at the site of the maximum electric field and subjected to microwave irradiation. Second, when the conductivity of the film increased, the film sample was placed at the site of the maximum magnetic field and again subjected to microwave irradiation. The microwave sintering process was completed within 1.5 min, which is significantly lower than the time required for the oven heating process. The resulting conductivity of the film, albeit only 30% of that of the bulk material, was seven times that of a film annealed at the same temperature in a furnace. Scanning electron microscopy images revealed that the nanoparticles underwent both grain necking and grain growth during microwave sintering. In addition, this sintering process was equivalent to the oven heating process performed at a 50 °C higher annealing temperature. An electromagnetic wave simulation and a heat transfer simulation of the microwave sintering process were performed to gain a thorough understanding of the process.

  11. Microwave sintering of Ag-nanoparticle thin films on a polyimide substrate

    International Nuclear Information System (INIS)

    Ag-nanoparticle thin films on a polyimide substrate were subjected to microwave sintering by use of a single-mode waveguide applicator. A two-step sintering process was employed. First, at low conductivities of the film, the film sample was placed at the site of the maximum electric field and subjected to microwave irradiation. Second, when the conductivity of the film increased, the film sample was placed at the site of the maximum magnetic field and again subjected to microwave irradiation. The microwave sintering process was completed within 1.5 min, which is significantly lower than the time required for the oven heating process. The resulting conductivity of the film, albeit only 30% of that of the bulk material, was seven times that of a film annealed at the same temperature in a furnace. Scanning electron microscopy images revealed that the nanoparticles underwent both grain necking and grain growth during microwave sintering. In addition, this sintering process was equivalent to the oven heating process performed at a 50 °C higher annealing temperature. An electromagnetic wave simulation and a heat transfer simulation of the microwave sintering process were performed to gain a thorough understanding of the process

  12. Optical Transient Relaxation of an Ag-BaO Composite Thin Film with a Supercontinuum Probe

    Institute of Scientific and Technical Information of China (English)

    王丹翎; 杨宏; 蒋红兵; 龚旗煌; 张琦锋; 吴锦雷

    2002-01-01

    The optical transient absorption spectra of an Ag-BaO thin film have been detected at a wavelength ranging from 400nm to 1000nm using the pump supercontinuum probe technique with a resolution of 130fs. We have observed the optical ultrafast relaxation, in which the electrons near the Fermi level of Ag nanoparticles were excited to a non-equilibrium state and then returned to an equilibrium state. The decay time was exponentially fitted and varied from 0.67ps to 4ps for different components of the supercontinuum probe. The peak of an unoccupied state for silver at level X'4 was estimated to be 1.47eV above the Fermi level.

  13. Preparation and characterization of double layer thin films ZnO/ZnO:Ag for methylene blue photodegradation

    Energy Technology Data Exchange (ETDEWEB)

    Wibowo, Singgih, E-mail: singgih@st.fisika.undip.ac.id; Sutanto, Heri, E-mail: herisutanto@undip.ac.id [Department of Physics, Faculty of Science and Mathematics, Diponegoro University (Indonesia)

    2016-02-08

    Double layer (DL) thin films of zinc oxide and silver-doped zinc oxide (ZnO/ZnO:Ag) were deposited on glass substrate by sol-gel spray coating technique. The prepared thin films were subjected for optical and photocatalytic studies. UV-visible transmission spectra shows that the subtitution of Ag in ZnO leads to band gap reduction. The influence of Ag doping on the photocatalytic activity of ZnO for the degradation of methylene blue dye was studied under solar radiation. The light absorption over an extended visible region by Ag ion doping in ZnO film contributed equally to improve the photocatalytic activity up to 98.29%.

  14. Synthesis of AgInSnS4 thin films by adding tin (Sn) into the chalcopyrite structure of AgInS2 using spray pyrolysis

    International Nuclear Information System (INIS)

    AgInSnS4 thin films were prepared by adding a tin salt to the starting solution used for preparing chalcopyrite AgInS2 thin films by spray pyrolysis The AgInSnS4 films were grown at substrate temperatures in the 300-400 oC range, using an alcoholic solution comprised of silver acetate, indium chloride, tin chloride and thiourea. The tin chloride content in the starting solution was gradually varied in terms of the molar ratio x = [Sn]/([S] + [Ag]) from 0 to 0.5 to obtain Sn-doped chalcopyrite AgInS2 (x 4 (x = 0.2-0.4). X-ray diffraction studies indicated that AgInSnS4 has a cubic spinel-like structure with lattice parameter of 10.77 A. All AgInSnS4 thin films exhibited p-type conduction, and their room temperature conductivity ranged from 10-1 to 10-2 S/cm. The conductivity versus 1/T plots for this material showed an Arrhenius-like behavior, from which two activation energies of Ea1 = 0.23-0.40 eV and Ea2 = 0.07-0.20 eV were determined. These results suggest that the grain boundary scattering and the ionization of shallow acceptors dominate the charge carrier transport in the sprayed AgInSnS4 thin films. The AgInSnS4 absorption spectrum revealed an energy gap around Eg = 1.89 eV, which was associated to direct-allowed transitions. To our knowledge, the quaternary compound has been prepared for the first time using spray pyrolysis.

  15. Influence of Lanthanum on Fluorescence Properties of Ag-BaO Thin Films

    Institute of Scientific and Technical Information of China (English)

    许北雪; 吴锦雷

    2003-01-01

    Ag-BaO thin films doped with lanthanum were prepared by vacuum deposition. Compared with the normal Ag-BaO thin film, there is almost no change with the shape and the peak site of the fluorescence spectrum; however, fluorescence emission strength of the whole observation band(325~600 nm)increases about 40%, and the increase of short wavelength range is more remarkable than that of long wavelength range, which we named "blue-stronger" phenomenon. Analytic results show that, with the forming of intermetallic compounds between silver and lanthanum, the 4f-state energy levels lie just below the Fermi level within 5 eV. It is the energy exchange between the 4f energy levels and the conduction band that causes the increase effect of fluorescence emission, and it is the optical absorption cross section of 4f electron, which increases with the increase of energy of incidence photon, that gives rise to the "blue-stronger" phenomenon.

  16. Theory and practical considerations of multilayer dielectric thin-film stacks in Ag-coated hollow waveguides.

    Science.gov (United States)

    Bledt, Carlos M; Melzer, Jeffrey E; Harrington, James A

    2014-02-01

    This analysis explores the theory and design of dielectric multilayer reflection-enhancing thin film stacks based on high and low refractive index alternating layers of cadmium sulfide (CdS) and lead sulfide (PbS) on silver (Ag)-coated hollow glass waveguides (HGWs) for low loss transmission at midinfrared wavelengths. The fundamentals for determining propagation losses in such multilayer thin-film-coated Ag hollow waveguides is thoroughly discussed, and forms the basis for further theoretical analysis presented in this study. The effects on propagation loss resulting from several key parameters of these multilayer thin film stacks is further explored in order to bridge the gap between results predicted through calculation under ideal conditions and deviations from such ideal models that often arise in practice. In particular, the effects on loss due to the number of dielectric thin film layers deposited, deviation from ideal individual layer thicknesses, and surface roughness related scattering losses are presented and thoroughly investigated. Through such extensive theoretical analysis the level of understanding of the underlying loss mechanisms of multilayer thin-film Ag-coated HGWs is greatly advanced, considerably increasing the potential practical development of next-generation ultralow-loss mid-IR Ag/multilayer dielectric-coated HGWs. PMID:24514252

  17. A dry method to synthesize dendritic Ag2Se nanostructures utilizing CdSe quantum dots and Ag thin films

    Science.gov (United States)

    Hu, Lian; Zhang, Bingpo; Xu, Tianning; Li, Ruifeng; Wu, Huizhen

    2015-01-01

    Dendritic Ag2Se nanostructures are synthesized in a dry environment by UV irradiating the hybrids composed of CdSe quantum dots (QDs) and silver (Ag). UV irradiation on CdSe QDs induces a photooxidation effect on the QD surface and leads to the formation of SeO2 components. Then SeO2 reacts with the Ag atoms in either Ag film or QD layer to produce the Ag2Se. The growth mechanism of Ag2Se dendrites on solid Ag films is explored and explained by a diffusion limited aggregation model in which the QD layer provides enough freedom for Ag2Se motion. Since the oxidation of the CdSe QDs is the critical step for the Ag2Se dendrites formation this dry chemical interaction between QDs and Ag film can be applied in the study of the QD surface chemical properties. With this dry synthesis method, the Ag2Se dendrites can also be facilely formed at the designed area on Ag substrates.

  18. Effect of additional element and heat treating temperature on micro-structure and mechanical behavior of Ag alloy thin film

    Institute of Scientific and Technical Information of China (English)

    JU Dong-ying; ISHIGURO S; ARIZONO T; HASEGAWA K

    2006-01-01

    For Ag alloy film used for the storage media,it is required to have heat-resistance,anti-constant temperature and anti-constant humidity characteristics,corrosion resistance,while high reflectivity over Al is maintained. An Ag alloy thin film (additive element Pd,Cu,P) was created on glass substrates,and various heat treatment was conducted. Then,fine structure was observed on this thin film using AFM,and fine structure evaluation of the inside was carried out by the in-plane diffractometry and X-ray diffractometry,and in addition,residual stress analysis was carried out. These results were compared and were examined,and fine structure and physical property in a metallic thin film were evaluated,and usefulness of evaluation method was verified.

  19. Optical properties and structure of Sb-rich AgInSbTe phase change thin films

    Institute of Scientific and Technical Information of China (English)

    张广军; 顾冬红; 干福熹

    2005-01-01

    A new composition content quaternary-alloy-based phase change thin film, Sb-rich AgInSbTe, has been prepared by DC-magnetron sputtering on a K9 glass substrate. After the film has been subsequently annealed at 200 ℃ for 30min,it becomes a crystalline thin film. The diffraction peak of antimony (Sb) are observed by shallow (0.5 degree) x-ray diffraction in the quaternary alloy thin film. The analyses of the measurement from differential scanning calorimetry (DSC) show that the crystallization temperature of the phase change thin film is about 190C and increases with the heating rate. By Kissinger plot, the activation energy for crystallization is determined to be 3.05eV. The refiectivity,refractive index and extinction coefficient of the crystalline and amorphous phase change thin films are presented.The optical absorption coefficient of the phase change thin films as a function of photon energy is obtained from the extinction coefficient. The optical band gaps of the amorphous and crystallization phase change thin films are 0.265eV and 1.127eV, respectively.

  20. Electromigration in Sn–Ag solder thin films under high current density

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, X. [School of Computing and Mathematical Sciences, University of Greenwich, 30 Park Row, London SE10 9LS (United Kingdom); Kotadia, H. [Physics Department, School of Natural and Mathematical Sciences, King' s College London, Strand, London WC2R 2LS (United Kingdom); Xu, S. [Department of Electronic Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kow-loon Tong, Hong Kong (China); Lu, H. [School of Computing and Mathematical Sciences, University of Greenwich, 30 Park Row, London SE10 9LS (United Kingdom); Mannan, S.H. [Physics Department, School of Natural and Mathematical Sciences, King' s College London, Strand, London WC2R 2LS (United Kingdom); Bailey, C. [School of Computing and Mathematical Sciences, University of Greenwich, 30 Park Row, London SE10 9LS (United Kingdom); Chan, Y.C. [Department of Electronic Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kow-loon Tong, Hong Kong (China)

    2014-08-28

    The electro-migration behavior of a Sn–Ag solder thin film stripe that is deposited on a glass substrate has been investigated under a high current density in the absence ofthermo-migration. The distribution of voids and hillocks at current densities of 4.4–6.0 × 10{sup 4} A/cm{sup 2} has been analyzed optically and using electron microscopy. The voids mainly formed at the cathode side of the stripe where maximum current density was predicted but voids also formed along a line that crosses the stripe. This was explained in terms of the initial voids forming at locations of maximum current density concentration, altering these locations, and then expanding into them. The movement of the maximum current density location is caused by redistribution of current as the voids form. An atomic migration model has been developed and used in this work. It was found that if thermal gradients were completely neglected, the model was unable to account for the divergence of atomic flux density which is necessary for void nucleation. However, the temperature dependence of the diffusivity of atoms is sufficient to account for void nucleation within the timescale of the experiments. - Highlights: • Experimental and computational study of electron migration in a SnAg film • The calculated atomic flux divergence has been used to predict void formation. • Voids caused by electromigration observed at current crowding sites and in other regions.

  1. Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics

    Science.gov (United States)

    Sainju, Deepak

    Many modern optical and electronic devices, including photovoltaic devices, consist of multilayered thin film structures. Spectroscopic ellipsometry (SE) is a critically important characterization technique for such multilayers. SE can be applied to measure key parameters related to the structural, optical, and electrical properties of the components of multilayers with high accuracy and precision. One of the key advantages of this non-destructive technique is its capability of monitoring the growth dynamics of thin films in-situ and in real time with monolayer level precision. In this dissertation, the techniques of SE have been applied to study the component layer materials and structures used as back-reflectors and as the transparent contact layers in thin film photovoltaic technologies, including hydrogenated silicon (Si:H), copper indium-gallium diselenide (CIGS), and cadmium telluride (CdTe). The component layer materials, including silver and both intrinsic and doped zinc oxide, are fabricated on crystalline silicon and glass substrates using magnetron sputtering techniques. These thin films are measured in-situ and in real time as well as ex-situ by spectroscopic ellipsometry in order to extract parameters related to the structural properties, such as bulk layer thickness and surface roughness layer thickness and their time evolution, the latter information specific to real time measurements. The index of refraction and extinction coefficient or complex dielectric function of a single unknown layer can also be obtained from the measurement versus photon energy. Applying analytical expressions for these optical properties versus photon energy, parameters that describe electronic transport, such as electrical resistivity and electron scattering time, can be extracted. The SE technique is also performed as the sample is heated in order to derive the effects of annealing on the optical properties and derived electrical transport parameters, as well as the

  2. Development of Ag/WO3/ITO thin film memristor using spray pyrolysis method

    Science.gov (United States)

    Dongale, T. D.; Mohite, S. V.; Bagade, A. A.; Gaikwad, P. K.; Patil, P. S.; Kamat, R. K.; Rajpure, K. Y.

    2015-11-01

    The unique nonlinear relationship between charge and magnetic flux along with the pinched hysteresis loop in I- V plane provide memory with resistance combinations of attribute to Memristor which lead to their novel applications in non volatile memory, nonlinear dynamics, analog computations and neuromorphic biological systems etc. The present paper reports development of Ag/WO3/ITO thin film memristor device using spray pyrolysis method. The structural, morphological and electrical properties of the thin film memristor device are further characterized using x-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and semiconductor device analyzer. The memristor is simulated using linear dopent drift model to ascertain the theoretical and experimental conformations. For the simulation purpose, the width of doped region (w) limited to the interval [0, D] is considered as a state variable along with the window function characterized by the equation f ( x) = w (1 - w). The reported memristor device exhibits the symmetric pinched hysteresis loop in I- V plane within the low operating voltage (±1 V). [Figure not available: see fulltext.

  3. Calculation of Elastic Constants of Ag/Pd Superlattice Thin Films by Molecular Dynamics with Many-Body Potentials

    Institute of Scientific and Technical Information of China (English)

    GAO Ning; LAI Wen-Sheng

    2006-01-01

    @@ The calculation of elastic constants of Ag/Pd superlattice thin films by molecular dynamics simulations with many-body potentials is presented. It reveals that the elastic constants C11 and C55 increase with decreasing modulation wavelength A of the films, which is consistent with experiments. However, the change of C11 and C55 with A is found to be around the values determined by a rule of mixture using bulk elastic constants of metals.No supermodulus effect is observed and it is due to cancellation between enhanced and reduced contributions to elastic constants from Ag and Pd layers subjected to compressive and tensile strains, respectively.

  4. Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics

    Science.gov (United States)

    Chagarov, Evgueni; Sardashti, Kasra; Kummel, Andrew C.; Lee, Yun Seog; Haight, Richard; Gershon, Talia S.

    2016-03-01

    The growth in efficiency of earth-abundant kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has slowed, due in part to the intrinsic limitations imposed by the band tailing attributed primarily to I-II antisite exchange. In this study, density functional theory simulations show that when Ag is substituted for Cu to form kesterite Ag2ZnSnSe4 (AZTSe), the I-II isolated antisite formation energy becomes 3.7 times greater than in CZTSSe, resulting in at least an order of magnitude reduction in I-II antisite density. Experimental evidence of an optoelectronically improved material is also provided. Comparison of the low-temperature photoluminescence (PL) structure of Cu(In,Ga)Se2 (CIGSe), CZTSSe, and AZTSe shows that AZTSe has a shallow defect structure with emission significantly closer to the band edge than CZTSe. Existence of suppressed band tailing is found in the proximity of the room-temperature PL peak of AZTSe to its measured band gap. The results are consistent with AZTSe being a promising alternative to CZTSSe and CIGSe for thin film photovoltaics.

  5. Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics.

    Science.gov (United States)

    Chagarov, Evgueni; Sardashti, Kasra; Kummel, Andrew C; Lee, Yun Seog; Haight, Richard; Gershon, Talia S

    2016-03-14

    The growth in efficiency of earth-abundant kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has slowed, due in part to the intrinsic limitations imposed by the band tailing attributed primarily to I-II antisite exchange. In this study, density functional theory simulations show that when Ag is substituted for Cu to form kesterite Ag2ZnSnSe4 (AZTSe), the I-II isolated antisite formation energy becomes 3.7 times greater than in CZTSSe, resulting in at least an order of magnitude reduction in I-II antisite density. Experimental evidence of an optoelectronically improved material is also provided. Comparison of the low-temperature photoluminescence (PL) structure of Cu(In,Ga)Se2 (CIGSe), CZTSSe, and AZTSe shows that AZTSe has a shallow defect structure with emission significantly closer to the band edge than CZTSe. Existence of suppressed band tailing is found in the proximity of the room-temperature PL peak of AZTSe to its measured band gap. The results are consistent with AZTSe being a promising alternative to CZTSSe and CIGSe for thin film photovoltaics.

  6. Influence of oxygen partial pressure on the physical properties of Ag doped NiO thin films

    Science.gov (United States)

    Reddy, Y. Ashok Kumar; Reddy, A. Sivasankar; Reddy, P. Sreedhara

    2013-06-01

    Ag doped p-type NiO thin films were successfully deposited by DC reactive magnetron sputtering technique at different oxygen partial pressures in the range 1 × 10-4 - 9 × 10-4 mbar. The structural and morphological properties of the films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). All the deposited films were of polycrystalline nature and exhibited cubic structure with preferential growth. The morphological studies revealed that the surface roughness was increased with increasing oxygen partial pressure up to 5 × 10-4 mbar and decreased at higher oxygen partial pressures.

  7. Antimicrobial properties of Zr–Cu–Al–Ag thin film metallic glass

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hsien-Wei; Hsu, Kai-Chieh; Chan, Yu-Chen [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan (China); Duh, Jenq-Gong, E-mail: jgd@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan (China); Lee, Jyh-Wei [Department of Materials Engineering, Ming Chi University of Technology, Taipei, Taiwan (China); Center for Thin Film Technologies and Applications, Mingchi University of Technology, Taipei, Taiwan (China); Jang, Jason Shian-Ching [Department of Mechanical Engineering, Institute of Materials Science and Engineering, National Central University, Chung-Li, Taiwan (China); Chen, Guo-Ju [Department of Materials Science and Engineering, I-Shou University, Kaohsiung, Taiwan (China)

    2014-06-30

    Metallic glass as a prominent class of structure and multifunctional materials exhibits several unique properties in mechanical, electrochemical, and thermal properties. This study aimed to realize the advantage of biomedical application and to promote the attainable size of metallic glasses by the physical vapor deposition. The Zr–Cu–Al–Ag thin film metallic glass (TFMG) was deposited on silicon wafer and SUS304 stainless steel substrates by magnetron sputtering with single target. For X-ray diffraction analysis, all TFMGs revealed typical broad peaks around the incident angle of 30 to 50°, suggesting that coatings possess amorphous structure. In addition, diffuse halo ring patterns of transmission electron microscopy indicated a fine amorphorization for TFMG via sputtering process. The variation of surface roughness showed that TFMG derived from higher power of metallic targets revealed rougher morphology. Besides, the roughness of SUS304 stainless steel substrate significantly reduced from 7 nm to about 1 nm after TFMGs were deposited. The microbes of Candida albicans, Escherichia coli, and Pseudomonas aeruginosa were used and cultivated on the TFMG coatings with medium to investigate the antimicrobial properties. In the incubation experiment, the growth of each microbe was recorded by a digital photography system and the growth area was calculated by image processing software. The growth area of the microbes on the TFMG was mostly smaller than that on SUS304 stainless steel ones within incubation time of 72 h, indicating that the TFMGs reveal better antimicrobial capability. Moreover, the coatings exhibit a particularly long-term antimicrobial effect for P. aeruginosa. In summary, the Zr–Cu–Al–Ag prepared by sputtering with a single target device presented superior glass forming ability, and coatings with copper and silver constituents revealed significantly antimicrobial properties. Besides, the surface roughness is another factor to affect the

  8. A simple synthesis of Ag{sub 2+x}Se nanoparticles and their thin films for electronic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Vo, Duc Quy; Dung, Dang Duc; Cho, Sunglae; Kim, Sunwook [School of Chemical Engineering, University of Ulsan, Ulsan (Korea, Republic of)

    2016-01-15

    A simple method to synthesize silver selenide nanoparticles has been proposed. By changing the ratio of Se-oleylamine complex and silver acetate in the reacting mixture at different temperatures, both size and stoichiometry of the silver selenide particles could be successfully controlled. The size of the nanoparticles was adjusted by changing reaction temperatures. The synthesized silver selenide nanoparticles showed size changes from 3 to 10 nm when the corresponding reaction temperatures were 40-100 .deg. C, respectively. In addition to the size change, the stoichiometry of the synthesized nanoparticles (Ag{sub 2+x}Se) could be adjusted by simply varying the ratio of Ag to Se precursors. Through XPS analyses the x value in Ag{sub 2+x}Se was determined, and it changed between 0.54 and −0.03 by varying Ag/Se ratio from 2/0.75 to 2/4. The optical property of the nonstoichiometric Ag{sub 2+x}Se nanoparticles was different from that of stoichiometric Ag{sub 2}Se nanoparticles, but showed the plasmon absorption of Ag-Ag network. The plasmon absorption was decreased with the increased concentration of the Se precursor. Finally, the Ag{sub 2+x}Se thin film in this work showed large magnetoresistance and successfully applied to prepare high-performance Schottky diode. The Ag{sub 2.06}Se film exhibited the magnetoresistance effect up to 0.9% at only 0.8 T at room temperature. The voltage drop and breakdown voltage of the Schottky diode were 0.5 V and 9.3 V, respectively.

  9. AES depth profile and photoconductive studies of AgInS2 thin films prepared by co-evaporation

    Directory of Open Access Journals (Sweden)

    C. A Arredondo

    2014-06-01

    Full Text Available In this study, thin films of AgInS2 with chalcopyrite-type tetragonal structure were grown by means of a procedure based on the sequential evaporation of metallic precursors in presence of elemental sulfur in a two-stage process. The effect of the growth temperature and the proportion of the evaporated Ag mass in relation to the evaporated In mass (mAg/mIn on the phase and homogeneity in the chemical composition were researched through X-ray diffraction measurements and Auger electrons spectroscopy. These measurements evidenced that the conditions for preparing thin films containing only the AgInS2 phase, grown with tetragonal chalcopyrite-type structure and good homogeneity of the chemical composition in the entire volume, are a temperature of 500 °C and a 0.89 mAg/mIn proportion. The transient photocurrent measurements indicated that the electricity transmission is affected by recombination processes via band-to-band transitions and trap-assisted transitions.

  10. A chemical bath deposition route to facet-controlled Ag3PO4 thin films with improved visible light photocatalytic activity

    Science.gov (United States)

    Gunjakar, Jayavant L.; Jo, Yun Kyung; Kim, In Young; Lee, Jang Mee; Patil, Sharad B.; Pyun, Jae.-Chul.; Hwang, Seong-Ju

    2016-08-01

    A facile, economic, and reproducible chemical bath deposition (CBD) method is developed for the fabrication of facet-controlled Ag3PO4 thin films with enhanced visible light photocatalytic activity. The fine-control of bath temperature, precursor, complexing agent, substrate, and solution pH is fairly crucial in preparing the facet-selective thin film of Ag3PO4 nanocrystal. The change of precursor from silver nitrate to silver acetate makes possible the tailoring of the crystal shape of Ag3PO4 from cube to rhombic dodecahedron and also the bandgap tuning of the deposited films. The control of [Ag+]/[phosphate] ratio enables to maximize the loading amount of Ag3PO4 crystals per the unit area of the deposited film. All the fabricated Ag3PO4 thin films show high photocatalytic activity for visible light-induced degradation of organic molecules, which can be optimized by tailoring the crystal shape of the deposited crystals. This CBD method is also useful in preparing the facet-controlled hybrid film of Ag3PO4-ZnO photocatalyst. The present study clearly demonstrates the usefulness of the present CBD method for fabricating facet-controlled thin films of metal oxosalt and its nanohybrid.

  11. Photochromism in RbAg4I5 thin films enhanced by hydrogen photosensitization simultaneous to illumination

    International Nuclear Information System (INIS)

    Photochemical hydrogen detached under the action of light from organic molecules adsorbed on the surface of various solids may perform different functions, for example, as a fuel, dopant or catalyst, which is of great interest for energy conversion, electronics, biology and medicine. On the other hand, physical and chemical properties of RbAg4I5 have been extensively studied in the last years because of its practical importance in solid electrolytes due to the superionic conductance for silver atoms at room temperature. Here we report on less common properties of RbAg4I5 presenting an experimental study of photochromism in RbAg4I5 thin films enhanced with the help of photochemical hydrogen detached from organic molecules adsorbed on the surface of the superionic conductor. This effect yielded drastic changes of the optical parameters of RbAg4I5 films in visible, UV and near IR spectral range due to photolysis and formation of silver clusters and colloids. We present a physical explanation that connects the behavior of hydrogen and the mechanism of the photolysis, whose main spirit is hydrogen photosensitization of RbAg4I5 films carried out simultaneously to illumination

  12. Surface Plasmons and Optical Properties of TiO2/X(X = Au and Ag) Nanostructure Thin Films

    Science.gov (United States)

    Zolanvari, A.; Sadeghi, H.; Norouzi, R.; Ranjgar, A.

    2013-09-01

    TiO2/X(X = Au and Ag) nanolayers are fabricated by depositing TiO2 films using rf magnetron sputtering on thin quartz substrates embedded with Au and Ag nanoparticles. Enhancement of light absorption of the nanostructural layers is observed. These plasmonic and non-plasmonic materials are ordered in geometric arrangements with dimensions that are fractions of the wavelength of light. The light absorption enhancement of synthesized structure in comparison to TiO2 is originated from near-field enhancement caused by the plasmonic effect of metallic nanoparticles, which can be demonstrated by the optical absorption spectra. We show that plasmon modes can exist for the infrared region of the optical spectrum. Also, we analyze the optical properties of the metal-insulator films, in order to clarify the role of metal inclusions in the TiO2 dielectric matrix. Optical band gaps of the nanolayer films are calculated by using Tauc's relation, and the n values of optical band gaps with the variation composition are found from 1.80 to 3.69 eV. Band gap narrowing and absorption in the visible spectral region induced by the incorporation of TiO2/X(X=Au and Ag) nanolayers enable the design of nanostructured thin films to be achieved for photocatalysts and solar energy converters.

  13. Incommensurate growth of Co thin film on close-packed Ag(111) surface

    Science.gov (United States)

    Barman, Sukanta; Menon, Krishna Kumar S. R.

    2016-05-01

    Growth of ultrathin Co layers on close-packed Ag(111)were investigated by means of Low Energy Electron Diffraction (LEED), X-ray Photoelectron Spectroscopy (XPS) and Angle-resolved Photoemission Spectroscopy(ARPES) techniques. The close-packed hexagonal face of Co(0001), exhibits a lattice misfit about 13% with Ag(111) surface which manipulates the growth to be incommensurate up to a certain thickness. The strain field causes aperiodic height undulation in the sub-angstrom regime of the film which was confirmed by p(1 × 1) LEED pattern along with a 6-fold moiré reconstruction pattern in the lower film thickness (up to ˜2ML). The evolution of the LEED pattern was studied with increasing film coverage. Lattice strain was measured with respect to the relative positions of these double spots as a functionof film thickness. Almost a constant strain (˜13%) in the full range of film thickness explains the moiré pattern formation in order to stabilize the incommensurate growth. For higher film coverages, an epitaxial well-ordered commensurate growth was observed. Core level and valance band electronic structures of these films were studied by XPS and ARPES techniques.

  14. Change in surface states of Ag(111) thin films upon adsorption of a monolayer of PTCDA organic molecules

    International Nuclear Information System (INIS)

    The change in the electronic structure of silver thin films of different thicknesses with the Ag( 111) orientation due to the interaction with an adsorbed monolayer of ordered organic molecules of 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA) has been investigated in terms of density functional theory. It has been shown that one of the two surface states of the pure films transforms into an unocc upied interface state due to the interaction so that all the main features of the initial state are retained. The relation of the resulting state to the unoccupied state experimentally observed in the PTCDA/Ag( 111 ) system by scanning tunneling and two-photon photoemission spectroscopy has been discussed.

  15. Pure Cubic-Phase Hybrid Iodobismuthates AgBi2 I7 for Thin-Film Photovoltaics.

    Science.gov (United States)

    Kim, Younghoon; Yang, Zhenyu; Jain, Ankit; Voznyy, Oleksandr; Kim, Gi-Hwan; Liu, Min; Quan, Li Na; García de Arquer, F Pelayo; Comin, Riccardo; Fan, James Z; Sargent, Edward H

    2016-08-01

    Bismuth-based hybrid perovskites are candidates for lead-free and air-stable photovoltaics, but poor surface morphologies and a high band-gap energy have previously limited these hybrid perovskites. A new materials processing strategy to produce enhanced bismuth-based thin-film photovoltaic absorbers by incorporation of monovalent silver cations into iodobismuthates is presented. Solution-processed AgBi2 I7 thin films are prepared by spin-coating silver and bismuth precursors dissolved in n-butylamine and annealing under an N2 atmosphere. X-ray diffraction analysis reveals the pure cubic structure (Fd3m) with lattice parameters of a=b=c=12.223 Å. The resultant AgBi2 I7 thin films exhibit dense and pinhole-free surface morphologies with grains ranging in size from 200-800 nm and a low band gap of 1.87 eV suitable for photovoltaic applications. Initial studies produce solar power conversion efficiencies of 1.22 % and excellent stability over at least 10 days under ambient conditions.

  16. PANI-Ag-Cu Nanocomposite Thin Films Based Impedimetric Microbial Sensor for Detection of E. coli Bacteria

    Directory of Open Access Journals (Sweden)

    Huda Abdullah

    2014-01-01

    Full Text Available PANI-Ag-Cu nanocomposite thin films were prepared by sol-gel method and deposited on the glass substrate using spin coating technique. Polyaniline was synthesized by chemical oxidative polymerization of aniline monomer in the presence of nitric acid. The films were characterized using XRD, FTIR, and UV-Visible spectroscopy. The performance of the sensor was conducted using electrochemical impedance spectroscopy to obtain the change in impedance of the sensor film before and after incubation with E. coli bacteria in water. The peaks in XRD pattern confirm the presence of Ag and Cu nanoparticles in face-centered cubic structure. FTIR analysis shows the stretching of N–H in the polyaniline structure. The absorption band from UV-Visible spectroscopy shows high peaks between 400 nm and 500 nm which indicate the presence of Ag and Cu nanoparticles, respectively. Impedance analysis indicates that the change in impedance of the films decreases with the presence of E. coli. The sensitivity on E. coli increases for the sample with high concentration of Cu.

  17. Synthesis and characterization of silver diethyldithiocarbamate cluster for the deposition of acanthite (Ag2S) thin films for photoelectrochemical applications

    International Nuclear Information System (INIS)

    Acanthite (Ag2S) thin films were fabricated on fluorine doped tin oxide coated conducting glass substrates by aerosol assisted chemical vapor deposition (AACVD) using silver cluster [Ag4{S2CN(C2H5)2}3(C5H5N)2]n·nNO3·2nH2O (1) [where (S2CN(C2H5)2) = diethyldithiocarbamate, C5H5N = pyridine] as a single source precursor. Cluster (1) was synthesized by the reaction of sodium diethyldithiocarbamate with silver nitrate in a mixture of acetone and pyridine. (1) was analyzed by melting point, elemental analysis, Fourier transform infrared spectroscopy, proton nuclear magnetic resonance spectroscopy, thermogravimetry and single crystal X-ray studies. Single crystal X-ray studies showed that (1) crystallizes in the triclinic crystal system with a = 11.4372(3), b = 11.6768(3), and c = 16.3672(4) Å and α = 105.817(3), β = 97.891(3), and γ = 93.274(3)° in the space group P-1. Thermogravimetric analysis revealed that (1) undergoes facile thermal decomposition at 400 °C to give a stable residual mass consistent with the formation of Ag2S. Thin films grown from a 0.02 M solution of (1) in pyridine at 350 and 400 °C using AACVD technique were characterized by powder X-ray diffraction, field emission scanning electron microscopy (FESEM), energy dispersive X-ray and ultraviolet-visible spectrophotometry. FESEM images of the films exhibited well-defined nanorods with length > 1000 nm and diameter 100–150 nm grown without any cracks, fractures or directional preference. A band gap of 1.05 eV was estimated by extrapolating the linear part of a Tauc plot recorded for the films. The photoelectrochemical (PEC) characteristics recorded under Air Mass 1.5 illumination indicated a photocurrent density of 220 μA cm−2 at 0.0 V vs Ag/AgCl/3 M KCl. The optical and PEC characteristics of the deposited thin films proved their suitability for PEC applications. - Highlights: • Synthesis and characterization of silver diethyl dithiocarbamate cluster • Fabrication of optically

  18. ArF excimer laser-induced deposition of Ag/C nanocomposite thin films in the presence of n-Hexane

    International Nuclear Information System (INIS)

    Highlights: • A new excimer laser ablation process was proposed to fabricate Ag/C thin film. • The size of Ag nanoparticles is ranging from 5 to 20 nm. • The ratios of Ag to C can be controlled by adjusting the pressure of n-Hexane. • The graphite-like structure of carbonaceous products was confirmed. - Abstract: Ag/C nanocomposite thin films with different Ag/C molar ratios have been prepared using ArF excimer laser-induced ablation process and silver target under n-Hexane atmosphere. The morphology, crystal structure and composition of as-deposited Ag/C nanocomposite thin films were investigated with high resolution electronic microscopic techniques (including scanning electron microscopy and transmission electron microscopy) and energy-dispersive X-ray spectroscopy, respectively. Laser Raman spectroscopy and Fourier transform infrared spectroscopy techniques were also applied to characterize the final carbonaceous products generated from n-Hexane under laser ablation process. The optical emission of the plume caused by the interaction between excimer laser and silver target in the presence of n-Hexane was studied to understand the possible reaction process. The UV–vis absorption of as-deposited Ag/C thin films, which is attributed to the surface plasmonic excitation, was also investigated in the present work

  19. Effective Ag doping by He-Ne laser exposure to improve the electrical and the optical properties of CdTe thin films for heterostructured thin film solar cells

    International Nuclear Information System (INIS)

    The cadmium telluride (CdTe) thin film solar cell is one of the strongest candidates due to the optimum band gap energy (about 1.4 eV) for solar energy absorption, high light absorption capability and lower cost requirements for solar cell production. However, the maximum efficiency of a CdTe thin film solar cell still remains just 16.5% despite its excellent absorption coefficient; i.e., the electrical properties of CdTe thin film, including the resistivity, must be improved to enhance the energy conversion efficiency. Silver (Ag) was doped by using helium-neon (He-Ne) laser (632.8 nm) exposure into sputtering-deposited p-type CdTe thin films. The resistivity of the Ag-doped CdTe thin films was reduced from 2.97 x 104 Ω-cm to the order of 5.16 x 10'-'2 Ω-cm. The carrier concentration of CdTe thin films had increased to 1.6 x 1018 cm-3 after a 15-minute exposure to the He-Ne laser. The average absorbance value of CdTe thin films was improved from 1.81 to 3.01 by the doping of Ag due to impurity-scattering. These improved properties should contribute to the efficiency of the photovoltaic effect of the photogenerated charged carriers. The methodology in this study is very simple and effective to dope a multilayered thin film solar cell with a relatively short process time, no wet-process, and selective treatment.

  20. Thin film Ag superlens towards lab-on-a-chip integration

    DEFF Research Database (Denmark)

    Jeppesen, Claus; Nielsen, Rasmus Bundgaard; Boltasseva, Alexandra;

    2009-01-01

    A thin metal film near-field superlens, as originally suggested by Pendry and realized by Fang et al. and Melville et al., is investigated with emphasis on materials suitable for integration on a lab-on-a-chip platform. A chemically resistant cyclo-olefin copolymer (COC), mr-I-T85 from microresist...

  1. Investigation of nanostructured Pd-Ag/n-ZnO thin film based Schottky junction for methane sensing

    Science.gov (United States)

    Roy, S.; Das, S.; Sarkar, C. K.

    2016-07-01

    Undoped nanocrystalline n-type ZnO thin film was deposited by chemical deposition technique on a thermally oxidized p-Si (~5 Ω cm resistivity and orientation) substrate. Formation of stable zinc oxide thin film was confirmed by two-dimensional X-Ray Diffraction (XRD) and EDX analysis. The average crystallite size of the ZnO sample was evaluated as ~50 nm. The surface was characterized by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) that confirm the formation of nanocrystalline (grain size ~50 nm) ZnO thin film with surface roughness of ~100 nm. Good conversion of precursor into ZnO thin film in the chemical deposition method was evident by Fourier Transform Infrared Spectroscopy (FTIR). A small peak at 479 cm-1was observed in the FTIR spectrum confirming the formation of quartzite structure of the ZnO. The band gap (~3.44 eV) of the material was calculated from the optical absorption spectroscopy. To prepare Pd-Ag/n-ZnO Schottky junction, Pd-Ag contacts were taken by electron beam evaporation method. I-V characteristics of the junction were studied at different temperatures in inert and reducing ambient (N2 and N2 + CH4) with turn on voltage of around 0.2 V. The parameters like ideality factor ( η), saturation current ( I 0), series resistance ( Rs), and barrier height ( Φ BO) of the junction were calculated in the temperature range 50-200 °C in N2 as well as in 1 % CH4 + N2 ambient. It was observed that the ideality factor decreases in the temperature range 50-200 °C ( η = 12.34 at 50 °C and η = 1.52 at 200 °C) in N2 ambient and η = 1.18 in N2 +CH4 ambient at 200 °C. Schottky Barrier Height ( Φ BO) of the Pd-Ag/n-ZnO junction was found to increase with temperature. A close observation of Pd-Ag/n-ZnO junction in the presence of methane was performed to appreciate its application as methane sensor. The sensing mechanism was illustrated by a simplified energy band diagram.

  2. Studies on mass attenuation coefficients, effective atomic numbers and electron densities for CoCuAg alloy thin film

    Science.gov (United States)

    Apaydın, G.; Cengiz, E.; Tıraşoğlu, E.; Aylıkcı, V.; Bakkaloğlu, Ö. F.

    2009-05-01

    The mass attenuation coefficients for the elements Co, Cu and Ag and a thin film of CoCuAg alloy were measured in the energy range 4.029-38.729 keV. Effective atomic numbers and electron densities were calculated by using these coefficients. The energies were obtained by using secondary targets that were irradiated with gamma-ray photons of 241Am. The x-rays were counted by using a Canberra Ultra-LEGe detector with a resolution of 150 eV at 5.9 keV. The results were compared with theoretical calculated values and fairly good agreement was found between them within an average experimental error. The mass attenuation coefficients, effective atomic numbers and electron densities were plotted versus photon energy.

  3. Studies on mass attenuation coefficients, effective atomic numbers and electron densities for CoCuAg alloy thin film

    International Nuclear Information System (INIS)

    The mass attenuation coefficients for the elements Co, Cu and Ag and a thin film of CoCuAg alloy were measured in the energy range 4.029-38.729 keV. Effective atomic numbers and electron densities were calculated by using these coefficients. The energies were obtained by using secondary targets that were irradiated with gamma-ray photons of 241Am. The x-rays were counted by using a Canberra Ultra-LEGe detector with a resolution of 150 eV at 5.9 keV. The results were compared with theoretical calculated values and fairly good agreement was found between them within an average experimental error. The mass attenuation coefficients, effective atomic numbers and electron densities were plotted versus photon energy.

  4. Surface assisted electric transport in Ag{sub 2}S thin films

    Energy Technology Data Exchange (ETDEWEB)

    Karashanova, D. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria)]. E-mail: adi@clf.bas.bg; Starbov, N. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria)

    2006-02-15

    Electric transport measurements of thickness-dependent electronic and ionic conductivity of epitaxial Ag{sub 2}S films are used to split both kinds of conductivity into bulk and surface components. The established considerable electronic and ionic surface conductances demonstrate unambiguously the co-existance of electronic and ionic space charge regions in the vicinity of silver sulfide free surface oriented along the zone axes [1-bar 01-bar ]. The parameters of both space charge layers - surface potential, thickness of the space charge region and concentration of the surface compensating charges, are calculated. It is estimated that for intrinsic silver sulfide, the effective surface potential of (1-bar 01-bar ) Ag{sub 2}S surface is negative, its value being about -610mV at 400K.

  5. Effect of H{sup +} irradiation on the optical properties of vacuum evaporated AgInSe{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, M.C. Santhosh, E-mail: santhoshmc@nitt.edu [Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli, Tamil Nadu 620 015 (India); Pradeep, B. [Solid State Physics Laboratory, Department of Physics, Cochin University of Science and Technology, Cochin, Kerala 682 022 (India)

    2009-07-30

    We prepared polycrystalline AgInSe{sub 2} thin films by vacuum evaporation on glass substrate at a high temperature using the stoichiometric powder. The thin films were characterized by X-ray diffraction and UV-vis-NIR spectroscopy. The samples were subjected to the irradiation of 1.26 MeV protons (H{sup +}). The effect of irradiation on the optical properties has been investigated for different doses of H{sup +}. It is observed that the band gap of silver indium selenide thin films decreases gradually with ion irradiation dose.

  6. Laser direct writing pattern structures on AgInSbTe phase change thin film

    Institute of Scientific and Technical Information of China (English)

    Aihuan Dun; Jingsong Wei; Fuxi Gan

    2011-01-01

    Different pattern structures axe obtained on the AglnSbTe (AIST) phase change film as induced by laser beam. Atomic force microscopy (AFM) was used to observe and analyze the different pattern structures. The AFM photos clearly show the gradually changing process of pattern structures induced by different threshold effects, such as crystallization threshold, microbump threshold, melting threshold, and ablation threshold. The analysis indicates that the AIST material is very effective in the fabrication of pattern structures and can offer relevant guidance for application of the material in the future.%@@ Different pattern structures are obtained on the AgInSbTe(AIST) phase change film as induced by laser beam.Atomic force microscopy(AFM) was used to observe and analyze the different pattern structures.The AFM photos clearly show the gradually changing process of pattern structures induced by different threshold effects,such as crystallization threshold,microbump threshold,melting threshold,and ablation threshold.

  7. Interface controlled growth of nanostructures in discontinuous Ag and Au thin films fabricated by ion beam sputter deposition for plasmonic applications

    Indian Academy of Sciences (India)

    R Brahma; M Ghanashyam Krishna

    2012-08-01

    The growth of discontinuous thin films of Ag and Au by low energy ion beam sputter deposition is reported. The study focuses on the role of the film–substrate in determining the shape and size of nanostructures achieved in such films. Ag films were deposited using Ar ion energy of 150 eV while the Au films were deposited with Ar ion energies of 250–450 eV. Three types of interfaces were investigated in this study. The first set of film–substrate interfaces consisted of Ag and Au films grown on borosilicate glass and carbon coated Cu grids used as substrates. The second set of films was metallic bilayers in which one of the metals (Ag or Au) was grown on a continuous film of the other metal (Au or Ag). The third set of interfaces comprised of discontinuous Ag and Au films deposited on different dielectrics such as SiO2, TiO2 and ZrO2. In each case, a rich variety of nanostructures including self organized arrays of nanoparticles, nanoclusters and nanoneedles have been achieved. The role of the film–substrate interface is discussed within the framework of existing theories of thin film nucleation and growth. Interfacial nanostructuring of thin films is demonstrated to be a viable technique to realize a variety of nanostructures. The use of interfacial nanostructuring for plasmonic applications is demonstrated. It is shown that the surface Plasmon resonance of the metal nanostructures can be tuned over a wide range of wavelengths from 400 to 700 nm by controlling the film–substrate interface.

  8. Photocatalytic Properties of TiO2 Thin Films Modified with Ag and Pt Nanoparticles Deposited by Gas Flow Sputtering.

    Science.gov (United States)

    Maicu, M; Glöss, D; Frach, Peter; Hecker, D; Gerlach, G; Córdoba, José M

    2015-09-01

    In this work, a gas flow sputtering (GFS) process which allows the production and deposition of metal nanoparticles (NPs) in a vacuum environment is described. Aim of the study is to prove the potential of this technology for the fabrication of new TiO2 films with enhanced photocatalytic properties. For this purpose, Ag and Pt NPs have been produced and deposited on photocatalytic float glass coated with TiO2 thin films by magnetron sputtering. The influence of the process parameters and of the metal amount on the final properties of the particles (quantity, size, size distribution, oxidation state etc.,) was widely investigated. Moreover, the effect of the NPs on the photocatalytic activity of the resulting materials was evaluated for the case of the decomposition of stearic acid (SA) during UV-A irradiation. The reduction of the water contact angle (WCA) during the irradiation period was measured in order to test the photo-induced super-hydrophilicity (PSH).

  9. Effect of mesh patterning with UV pulsed-laser on optical and electrical properties of ZnO/Ag-Ti thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kao, K.S. [Department of Computer and Communication, SHU-TE University, 59, Hengshan Rd., Yanchao, Kaohsiung County, Taiwan (China); Cheng, D.L., E-mail: dlcheng@stu.edu.tw [Department of Computer and Communication, SHU-TE University, 59, Hengshan Rd., Yanchao, Kaohsiung County, Taiwan (China); Chang, S.H. [Department of Computer and Communication, SHU-TE University, 59, Hengshan Rd., Yanchao, Kaohsiung County, Taiwan (China); Hsieh, P.T. [Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan (China); Chin, H.S. [Opto-Electronics System Section Metal Industries Research and Development Center, Kaohsiung, Taiwan (China); Lin, H.K. [Laser Application Technology Center/Industrial Technology Research Institute South, Liujia Shiang, Taiwan (China)

    2010-10-01

    In this study, the ZnO/Ag-Ti structure for transparence conducting oxide (TCO) is investigated by optimizing the thickness of the Ag-Ti alloy and ZnO layers. The Ag-Ti thin film is deposited by DC magnetron sputtering and its thicknesses is well controlled. The ZnO thin film is prepared by sol-gel method using zinc acetate as cation source, 2-methoxiethanol as solvent and monoethanolamine as solution stabilizer. The ZnO film deposition is performed by spin-coating technique and dried at 150 deg. C on Corning 1737 glass. Due to the conductivity of ZnO/Ag-Ti is dominated by Ag-Ti, the sheet resistance of ZnO/Ag-Ti decrease dramatically as the thickness of Ag-Ti layer increases. However, the transmittances of ZnO/Ag-Ti become unacceptable for TCO application after the thickness of Ag-Ti layer beyond 6 nm. The as-deposited ZnO/Ag-Ti structure has the optical transmittance of 83% - 500 nm and the low resistivity of 1.2 x 10{sup -5} {Omega}-cm. Furthermore, for improving the optical and electrical properties of ZnO/Ag-Ti, the thermal treatment using laser is adopted. Experimental results indicate that the transmittance of ZnO/Ag-Ti is improved from 83% to 89% - 500 nm with resistivity of 1.02 x 10{sup -5} {Omega}-cm after laser drilling. The optical spectrum, the resistance, and the morphology of the ZnO/Ag-Ti will be reported in the study.

  10. Effects of Low Ag Doping on Physical and Optical Waveguide Properties of Highly Oriented Sol-Gel ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Mohamed Dehimi

    2015-01-01

    Full Text Available A sol-gel dip-coating process was used to deposit almost stress-free highly c-axis oriented zinc oxide (ZnO thin films onto glass substrates. The effects of low silver doping concentration (Ag/Zn < 1% on the structural, morphological, optical, and waveguide properties of such films were investigated by X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy, UV-Visible spectrophotometry, and M-lines spectroscopy (MLS. XRD analysis revealed that all the films were in single phase and had a hexagonal wurtzite structure. The grain size values were calculated and found to be about 24–29 nm. SEM micrographs and AFM images have shown that film morphology and surface roughness were influenced by Ag doping concentration. According to UV-Vis. measurements all the films were highly transparent with average visible transmission values ranging from 80% to 86%. It was found that the Ag contents lead to widening of the band gap. MLS measurements at 632.8 nm wavelength put into evidence that all thin film planar waveguides demonstrate a well-guided fundamental mode for both transverse electric and transverse magnetic polarized light. Moreover, the refractive index of ZnO thin films was found to increase by Ag doping levels.

  11. Synthesis of Ag-doped hydrogenated carbon thin films by a hybrid PVD–PECVD deposition process

    Indian Academy of Sciences (India)

    Majji Venkatesh; Sukru Taktak; Efstathios I Meletis

    2014-12-01

    Silver-doped hydrogenated amorphous carbon (Ag-DLC) films were deposited on Si substrates using a hybrid plasma vapour deposition–plasma enhanced chemical vapour deposition (PVD–PECVD) process combining Ag target magnetron sputtering and PECVD in an Ar–CH4 plasma. Processing parameters (working pressure, CH4/Ar ratio and magnetron current) were varied to obtain good deposition rate and a wide variety of Ag films. Structure and bonding environment of the films were obtained from transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy studies. Variation of processing parameters was found to produce Ag-doped amorphous carbon or diamond-like carbon (DLC) films with a range of characteristics with CH4/Ar ratio exercising a dominant effect. It was pointed out that Ag concentration and deposition rate of the film increased with the increase in d.c. magnetron current. At higher Ar concentration in plasma, Ag content increased whereas deposition rate of the film decreased. FTIR study showed that the films contained a significant amount of hydrogen and, as a result of an increase in the Ag content in the hydrogenated DLC film, $sp^{2}$ bond content also increased. The TEM cross sectional studies revealed that crystalline Ag particles were formed with a size in the range of 2–4 nm throughout an amorphous DLC matrix.

  12. Characterization of phase change Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films by laser-irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Alvi, M.A., E-mail: alveema@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Zulfequar, M. [Department of Physics, Jamia Millia Islamia, New Delhi 110025 (India); Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

    2013-02-15

    Highlights: Black-Right-Pointing-Pointer Effect of laser-irradiation on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by X-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Laser-irradiation causes a decrease in optical band gap in Ga{sub 15}Se{sub 77}Ag{sub 8} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non-direct transitions predominate. - Abstract: Phase change Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films were prepared by thermal evaporation technique. Thin films were then irradiated by Transverse Electrical Excitation at Atmospheric Pressure (TEA) nitrogen laser for different time intervals. The X-ray structural characterization revealed the amorphous nature of as-prepared films while the laser irradiated films show the polycrystalline nature. Field Emission Scanning Electron Microscope (FESEM) has been used to study the structural changes. The results are discussed in terms of the structural aspects and amorphous to crystalline phase change in Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films. The observed changes are associated with the interaction of the incident photon and the lone-pairs electrons which affects the band gap of the Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films. The optical constants of these thin films are measured by using the absorption spectra measurements as a function of photon energy in the wavelength region 400-1100 nm. It is found that the optical band gap decreases while the absorption coefficient and extinction coefficient increases with increasing the laser-irradiation time. The decrease in the optical band gap has been explained on the basis of change in nature of films, from amorphous to polycrystalline state. The dc

  13. X-ray photoelectron spectroscopy studies of Ag-doped thin amorphous Ge{sub x}Sb{sub 40-x}S{sub 60} films

    Energy Technology Data Exchange (ETDEWEB)

    Debnath, R.K.; Fitzgerald, A.G.; Christova, K

    2002-12-30

    X-ray photoelectron spectroscopy has been used to determine the binding energies of the core electrons in Ag-doped amorphous thin Ge{sub x}Sb{sub 40-x}S{sub 60} films (x=15, 20, 25 and 27). Chemical shifts of the constituent elements have revealed that electrons are transferred from chalcogenide to metal and compounds such as Ag{sub 2}S and Ag{sub 2}O are likely to foue to photo-induced chemical modification and oxidation, respectively. Charge defects are induced in the amorphous system.

  14. Electrical and optical characteristics of Ag/CdTe thin film structures

    International Nuclear Information System (INIS)

    Effect of Ag diffusion on electrical, optical and structural properties of Ag/CdTe structures have been investigated. In the range of 280-420 degrees Celsius the effective coefficient of thermal diffusion and photodiffusion are described. The acceleration of Ag diffusion under illumination was tentatively attributed to photoionization of Ag increasing the interstitial flux of silver. Ag/CdTe structures exposed to annealing were characterized by X-ray diffraction, conductivity-temperature and optical transmission measurements. In XRD patterns of annealed Ag/CdTe structures, besides the intensive peak of cubic CdTe, the weak peaks of Ag2Te phase are also present. The temperature dependence of conductivity and the absorption spectra of annealed Ag/CdTe structures showed the energy levels 0.13 eV and 0.10 eV respectively and nature of these levels were discussed

  15. Electrical and optical characteristics of Ag/CdTe thin film structures

    International Nuclear Information System (INIS)

    Full text : Effect of Ag diffusion on electrical, optical and structural properties of Ag/CdTe structures have been investigated. In the range of 280-420 degrees Celsius the effective coefficient of thermal diffusion and photodiffusion are described. The acceleration of Ag diffusion under illumination was tentatively attributed to photoionization of Ag increasing the interstitial flux of silver. Ag/CdTe structures exposed to annealing were characterized by X-ray diffraction (XRD), conductivity-temperature and optical transmission measurements. In XRD patterns of annealed Ag/CdTe structures, besides the intensive peak of cubic CdTe, the weak peaks of Ag2Te phase are also present. The temperature dependence of conductivity and the absorption spectra of annealed Ag/CdTe structures showed the energy levels 0.13 eV and 0.10 eV respectively and nature of these levels were discussed

  16. High-Jc YBa2Cu3O7-x-Ag superconducting thin films synthesized through a fluorine-free MOD method

    DEFF Research Database (Denmark)

    Tang, Xiao; Yue, Zhao; Wu, W.;

    2015-01-01

    Obtaining a high critical current density (Jc) remains the main challenge in developing fluorine-free metal organic deposition (MOD) methods to fabricate YBCO superconducting thin films. Silver addition was used to raise the Jc values in this research work. By reacting with propionic acid and amm...... films at a temperature as low as 760°C. Grain growth and intergranular conductivity were also found to be improved by silver doping. After annealing under optimized conditions, a high Jc of 4.6MA/cm2 was obtained in a YBCO-Ag thin film with 10 wt% Ag.......Obtaining a high critical current density (Jc) remains the main challenge in developing fluorine-free metal organic deposition (MOD) methods to fabricate YBCO superconducting thin films. Silver addition was used to raise the Jc values in this research work. By reacting with propionic acid...... and ammonia, AgNO3 was initially mixed with YBCO carboxylate precursors dissolved in methanol. High-temperature in situ XRD measurements on the YBCO-Ag powders revealed that silver addition lowers the incongruent melting temperature of YBCO to 760°C and resulted in a smooth surface morphology of the YBCO...

  17. Strain Distribution of Au and Ag Nanoparticles Embedded in Al2O3 Thin Film

    Directory of Open Access Journals (Sweden)

    Honghua Huang

    2014-01-01

    Full Text Available Au and Ag nanoparticles embedded in amorphous Al2O3 matrix are fabricated by the pulsed laser deposition (PLD method and rapid thermal annealing (RTA technique, which are confirmed by the experimental high-resolution transmission electron microscope (HRTEM results, respectively. The strain distribution of Au and Ag nanoparticles embedded in the Al2O3 matrix is investigated by the finite-element (FE calculations. The simulation results clearly indicate that both the Au and Ag nanoparticles incur compressive strain by the Al2O3 matrix. However, the compressive strain existing on the Au nanoparticle is much weaker than that on the Ag nanoparticle. This phenomenon can be attributed to the reason that Young’s modulus of Au is larger than that of Ag. This different strain distribution of Au and Ag nanoparticles in the same host matrix may have a significant influence on the technological potential applications of the Au-Ag alloy nanoparticles.

  18. Augmentation of thermoelectric performance of VO2 thin films irradiated by 200 MeV Ag9+-ions

    Science.gov (United States)

    Khan, G. R.; Kandasami, A.; Bhat, B. A.

    2016-06-01

    Swift Heavy Ion (SHI) irradiation with 200 MeV Ag9+-ion beam at ion fluences of 1E11, 5E11, 1E12, and 5E12 for tuning of electrical transport properties of VO2 thin films fabricated by so-gel technique on alumina substrates has been demonstrated in the present paper. The point defects created by SHI irradiation modulate metal to insulator phase transition temperature, carrier concentration, carrier mobility, electrical conductivity, and Seebeck coefficient of VO2 thin films. The structural properties of the films were characterized by XRD and Raman spectroscopy and crystallite size was found to decrease upon irradiation. The atomic force microscopy revealed that the surface roughness of specimens first decreased and then increased with increasing fluence. Both resistance as well as Seebeck coefficient measurements demonstrated that all the samples exhibit metal-insulator phase transition and the transition temperatures decreases with increasing fluence. Hall effect measurements exhibited that carrier concentration increased continuously with increasing fluence which resulted in an increase of electrical conductivity by several orders of magnitude in the insulating phase. Seebeck coefficient in insulating phase remained almost constant in spite of an increase in the electrical conductivity by several orders of magnitude making SHI irradiation an alternative stratagem for augmentation of thermoelectric performance of the materials. The carrier mobility at room temperature decreased up to the beam fluence of 5E11 and then started increasing whereas Seebeck coefficient in metallic state first increased with increasing ion beam fluence up to 5E11 and thereafter decreased. Variation of these electrical transport parameters has been explained in detail.

  19. Coexistent compressive and tensile strain in Ag thin films on Si(1 1 1)-(7×7) surfaces

    Science.gov (United States)

    Goswami, D. K.; Bhattacharjee, K.; Satpati, B.; Roy, S.; Kuri, G.; Satyam, P. V.; Dev, B. N.

    2007-09-01

    Growth and strain behavior of thin Ag films on Si substrates have been investigated by scanning tunneling microscopy, cross-sectional transmission electron microscopy and high resolution X-ray diffraction studies. Ag islands formed on Si at room temperature growth show strongly preferred heights and flat top. At low coverage [ ≳1 monolayer (ML)], Ag islands with (1 1 1) orientation containing two atomic layers of Ag are overwhelmingly formed [D.K. Goswami, K. Bhattacharjee, B. Satpati, S. Roy, P.V. Satyam, B.N. Dev, Surf. Sci. 601 (2007) 603]. A thicker (40 ML) annealed film shows two closely spaced Ag(1 1 1) diffraction peaks—one weak and broad and the other narrow and more intense. The broad peak corresponds to an average expansion (0.21%) and the narrow intense peak corresponds to a contraction (0.17%) of the Ag(1 1 1) planar spacing compared to the bulk value. This coexistence of compressive and tensile strain can be explained in terms of changes in the Ag lattice during the heating-cooling cycle due to thermal expansion coefficient mismatch between Ag and Si.

  20. Two approaches for enhancing the hydrogenation properties of palladium: Metal nanoparticle and thin film over layers

    Indian Academy of Sciences (India)

    Manika Khanuja; B R Mehta; S M Shivaprasad

    2008-11-01

    In the present study, two approaches have been used for enhancing the hydrogenation properties of Pd. In the first approach, metal thin film (Cu, Ag) has been deposited over Pd and hydrogenation properties of bimetal layer Cu (thin film)/Pd(thin film) and Ag(thin film)/Pd(thin film) have been studied. In the second approach, Ag metal nanoparticles have been deposited over Pd and hydrogenation properties of Ag (nanoparticle)/Pd (thin film) have been studied and compared with Ag(thin film)/Pd(thin film) bimetal layer system. The observed hydrogen sensing response is stable and reversible over a number of hydrogen loading and deloading cycles in both bimetallic systems. Alloying between Ag and Pd is suppressed in case of Ag(nanoparticle)/Pd(thin film) bimetallic layer on annealing as compared to Ag (thin film)/Pd(thin film).

  1. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  2. Study on the fabrication of transparent electrodes by using a thermal-roll imprinted Ag mesh and anATO thin film

    Science.gov (United States)

    Kim, Sung Jin; Choi, Kyoon; Choi, Se Young

    2016-03-01

    Transparent conductive films have been widely studied because of their potential applications in optoelectronic devices such as paper displays, dye-sensitized solar cells (DSSCs), organic lighting-emitting diodes (OLEDs), organic solar cells and so on. In this paper, we report on a low-resistance, a high-transparents conductive film that can be applied as It a flexible device substrate. In order to the fabricate transparent conductive film, we used a high-resolution roll imprinting method. The following steps were performed: The design and manufacture of an electroforming stamp mold, the fabrication of high resolution roll imprinted on flexible film, and the manufacture of an Ag grid that was filled by using a doctor blade process with a nano-sized Ag paste. Then on patterned Its films, antimony tin oxide was coated with ATO sol solution by using bar the coating method. The fabricated ATO/Ag mesh electrode showed good flexibility, and It exhibited a high optical transmittance of 85.3% in the visible wavelength and a sheet resistance of 41 Ω/sq. Furthermore, the bending test for mechanical properties showed that the ATO/Ag thin film had good flexibility.

  3. The structural studies of Ag containing TiO2-SiO2 gels and thin films deposited on steel

    Science.gov (United States)

    Adamczyk, Anna; Rokita, Magdalena

    2016-06-01

    FTIR spectroscopic structural studies of titania-silica monolith samples as well as thin films deposited on steel were described in this work. Thin films were synthesized by the sol-gel method applying the dip coating as separate one-component TiO2 and/or SiO2 layers or as two-component TiO2-SiO2 thin films. Silver nanoparticles were incorporated into the structure from pure SiO2 sol, deposited then as an additional layer in those hybrid multilayers systems. Except the spectroscopic studies, XRD diffraction, SEM microscopy with EDX analysis and AFM microscopy were applied. The structural studies allow to describe and compare the structure and the morphology of thin films, as well those Ag free as Ag containing ones, also by the comparison with the structure of bulk samples. In FTIR spectra, the band observed at about 613 cm-1 can be connected with the presence of the non-tetrahedral cation in the structure and is observed only in the spectra of Ag containing bulk samples and thin films. The bands at 435-467 cm-1 are due to the stretching vibrations of Ti-O bonds or as well to the bending vibrations of O-Si-O one. In the ranges of 779-799 cm-1 and 1027-1098 cm-1, the bands ascribed to the symmetric stretching vibrations and asymmetric vibrations of Si-O-Si connections, respectively, are observed. SEM and AFM images gave the information on the microstructure and the topography of samples surface. XRD measurements confirmed the presence of only amorphous phase in samples up to 500 °C and allowed to observe the tendency of their crystallization.

  4. Influence of a hot and humid environment on thermal transport across the interface between a Ag thin-film line and a substrate

    Science.gov (United States)

    Li, Yuan; Noguchi, Kyohei; Saka, Masumi

    2016-04-01

    To evaluate the reliability of Ag thin-film lines for a wide range of applications in electronic devices, knowledge of the thermal transport across the interface between the line and the underlying substrate is of great importance. This is because such thermal transport significantly affects the temperature distribution in the line, the electrical performance of the line and the service life of the device the line is installed on. In this work, we examine the influence of a hot and humid environment on the thermal transport across the interface between a Ag thin-film line and a substrate. By performing a series of current-stressing experiments using the four-point probe method at atmospheric conditions (296 K and 30 RH%) on a Ag thin-film line for different durations of exposure to a hot and humid environment (323 K and 90 RH%), the electrical resistivity was found to increase with the exposure duration. Such an increase is believed to be the result of a decrease in the interfacial thermal conductance, which indicates less thermal transport from the line to the substrate. Moreover, by observing the surface morphology changes in the line and conducting a one-dimensional electro-thermal analysis, such variations can be attributed to the generation and growth of voids within the line, which hinder heat transfer from the line to the substrate through the interface.

  5. Combinatorial development of antibacterial Zr-Cu-Al-Ag thin film metallic glasses

    Science.gov (United States)

    Liu, Yanhui; Padmanabhan, Jagannath; Cheung, Bettina; Liu, Jingbei; Chen, Zheng; Scanley, B. Ellen; Wesolowski, Donna; Pressley, Mariyah; Broadbridge, Christine C.; Altman, Sidney; Schwarz, Udo D.; Kyriakides, Themis R.; Schroers, Jan

    2016-05-01

    Metallic alloys are normally composed of multiple constituent elements in order to achieve integration of a plurality of properties required in technological applications. However, conventional alloy development paradigm, by sequential trial-and-error approach, requires completely unrelated strategies to optimize compositions out of a vast phase space, making alloy development time consuming and labor intensive. Here, we challenge the conventional paradigm by proposing a combinatorial strategy that enables parallel screening of a multitude of alloys. Utilizing a typical metallic glass forming alloy system Zr-Cu-Al-Ag as an example, we demonstrate how glass formation and antibacterial activity, two unrelated properties, can be simultaneously characterized and the optimal composition can be efficiently identified. We found that in the Zr-Cu-Al-Ag alloy system fully glassy phase can be obtained in a wide compositional range by co-sputtering, and antibacterial activity is strongly dependent on alloy compositions. Our results indicate that antibacterial activity is sensitive to Cu and Ag while essentially remains unchanged within a wide range of Zr and Al. The proposed strategy not only facilitates development of high-performing alloys, but also provides a tool to unveil the composition dependence of properties in a highly parallel fashion, which helps the development of new materials by design.

  6. 200 MeV Ag15+ ion beam irradiation effects on spray deposited 5 wt% `Li' doped V2O5 thin film

    Science.gov (United States)

    Kovendhan, M.; Joseph, D. Paul; Manimuthu, P.; Sendilkumar, A.; Asokan, K.; Venkateswaran, C.; Mohan, R.

    2016-05-01

    Lithium 5 wt% doped V2O5 thin film was deposited onto ITO substrate by spray pyrolysis technique. The substrate temperature was kept at 450 °C. 200 MeV Ag15+ ion beams at a fluence of 5×1012 ions/cm2 was irradiated on 5 wt% `Li' doped V2O5 film of thickness 1367 nm. The XRD pattern confirms that the pristine film is non stoichiometry with orthorhombic structure and upon irradiation the crystallinity decreased and an obvious textured growth along (020) plane is induced. Raman peak observed at 917 cm-1 is due to oxygen deficiency. Upon irradiation, the optical transparency and band gap of the film decreased. Electrical transport property study shows that the resistivity increased by one order for the irradiated film.

  7. Growth of Ag thin films on ZnO(0 0 0 -1) investigated by AES and STM

    Energy Technology Data Exchange (ETDEWEB)

    Duriau, E. [Interuniversity Microelectronic Center (IMEC), SPDT-MCA, Kapeldreef 75, B-3001 Leuven (Belgium); Agouram, S. [Dpto. Fisica Aplicada y Electromagnetismo c/Dr. Moliner no. 50, 46100 Burjassot, Valencia (Spain); Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Morhain, C. [Centre de Recherche sur l' HeteroEpitaxie et ses Applications (CRHEA), CNRS, Rue Bernard Gregory, F-06560 Valbonne Sophia-Antipolis (France); Seldrum, T. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Sporken, R. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Dumont, J. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium)]. E-mail: jacques.dumont@fundp.ac.be

    2006-11-15

    The growth of Ag films on ZnO(0 0 0 -1) has been investigated by Auger electron spectroscopy (AES) and scanning tunneling microscopy (STM). A high density of islands is nucleated at the earliest stages of the growth. An upstepping mechanism causes these islands to coalesce while the uncovered fraction of the ZnO surface remains constant (30%)

  8. The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe{sub 16}N{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Meiyin [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Department of Electrical and Computer Engineering, The Center for Micromagnetics and Information Technologies (MINT), University of Minnesota, 200 Union St SE, Minneapolis, Minnesota 55455 (United States); Allard, Lawrence F. [High Temperature Materials Laboratory, Materials Science and Technology Division, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831 (United States); Ji, Nian; Zhang, Xiaowei; Wang, Jian-Ping [Department of Electrical and Computer Engineering, The Center for Micromagnetics and Information Technologies (MINT), University of Minnesota, 200 Union St SE, Minneapolis, Minnesota 55455 (United States); Yu, Guang-Hua [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)

    2013-12-09

    Partially ordered Fe-N thin films were grown by a facing target sputtering process on the surface of a (001) Ag underlayer on MgO substrates. It was confirmed by x-ray diffraction that the Ag layer enlarged the in-plane lattice of the Fe-N thin films. Domains of the ordered α″-Fe{sub 16}N{sub 2} phase within an epitaxial (001) α′-Fe{sub x}N phase were identified by electron diffraction and high-resolution aberration-corrected scanning transmission electron microscopy (STEM) methods. STEM dark-field and bright-field images showed the fully ordered structure of the α″-Fe{sub 16}N{sub 2} at the atomic column level. High saturation magnetization(Ms) of 1890 emu/cc was obtained for α″-Fe{sub 16}N{sub 2} on the Ag underlayer, while only 1500 emu/cc was measured for Fe-N on the Fe underlayer. The results are likely due to a tensile strain induced in the α″-Fe{sub 16}N{sub 2} phase by the Ag structure at the interface.

  9. Ohmic contacts of Au and Ag metals to n-type GdN thin films

    Directory of Open Access Journals (Sweden)

    Felicia Ullstad

    2015-05-01

    Full Text Available The rare-earth nitrides appear as attractive alternatives to dilute ferromagnetic semiconductors for spintronics device applications. Most of them combine the properties of the ferromagnet and the semiconductor, an exceedingly rare combination. In this work we have grown n-type polycrystalline semiconducting GdN layers between pre-deposited contacts made of Cr/Au and Cr/Ag. The resistivity of the GdN layers ranges from 4.4×10-4 Ωcm to 3.1×10-2 Ωcm depending on the nitrogen pressure during the growth. The electrical properties of metal/n-type GdN/metal planar junctions are investigated as a function of the temperature. The current voltage characteristics of the junctions were linear for temperatures ranging from 300 K down to 5 K, suggesting an ohmic contact between the Au or Ag metal and the n-type GdN layer.

  10. Enhanced Thermochromic Properties and Solar-Heat Shielding Ability of W(x)V(1-x)O2 Thin Films with Ag Nanowires Capping Layers.

    Science.gov (United States)

    Zhao, Li Li; Miao, Lei; Liu, Cheng Yan; Wang, Hai Long; Tanemura, Sakae; Sun, Li Xian; Gao, Xiang; Zhou, Jian Hua

    2015-11-01

    Considerable efforts have been made to shift the phase transition temperature of metal-doped vanadium dioxide (VO2) films nearer the ambient temperature while maintain the excellent thermochromic properties simultaneously. Here, we describe a facile and economic solution-based method to fabricate W-doped VO2 (V(1-x)W(x)O2) thin films with excellent thermochromic properties for the application of smart windows. The substitutional doping of tungsten atoms notably reduces the phase transition temperature to the ambient temperature and retains the excellent thermochromic property. Furthermore, Ag nanowires (NWs) are employed as capping layers to effectively decrease the thermal emissivity from 0.833 to 0.603, while the original near infrared region (NIR) modulation ability is not severely affected. Besides, the Ag NWs layers further depress the phase transition temperature as well as the hysteresis loop width, which is important to the fenestration application. These solution-grown Ag NWs/V(1-x)W(x)O2 thin films exhibit excellent solar modulation ability, narrowed hysteresis loop width as well as low thermal emissivity, which provide a promising perspective into the practical application of VO2-based smart windows.

  11. Enhanced Thermochromic Properties and Solar-Heat Shielding Ability of W(x)V(1-x)O2 Thin Films with Ag Nanowires Capping Layers.

    Science.gov (United States)

    Zhao, Li Li; Miao, Lei; Liu, Cheng Yan; Wang, Hai Long; Tanemura, Sakae; Sun, Li Xian; Gao, Xiang; Zhou, Jian Hua

    2015-11-01

    Considerable efforts have been made to shift the phase transition temperature of metal-doped vanadium dioxide (VO2) films nearer the ambient temperature while maintain the excellent thermochromic properties simultaneously. Here, we describe a facile and economic solution-based method to fabricate W-doped VO2 (V(1-x)W(x)O2) thin films with excellent thermochromic properties for the application of smart windows. The substitutional doping of tungsten atoms notably reduces the phase transition temperature to the ambient temperature and retains the excellent thermochromic property. Furthermore, Ag nanowires (NWs) are employed as capping layers to effectively decrease the thermal emissivity from 0.833 to 0.603, while the original near infrared region (NIR) modulation ability is not severely affected. Besides, the Ag NWs layers further depress the phase transition temperature as well as the hysteresis loop width, which is important to the fenestration application. These solution-grown Ag NWs/V(1-x)W(x)O2 thin films exhibit excellent solar modulation ability, narrowed hysteresis loop width as well as low thermal emissivity, which provide a promising perspective into the practical application of VO2-based smart windows. PMID:26726666

  12. Optical and electrical properties and phonon drag effect in low temperature TEP measurements of AgSbSe2 thin films

    Science.gov (United States)

    Namitha Asokan, T.; Urmila, K. S.; Jacob, Rajani; Reena Philip, Rachel; Okram, G. S.; Ganesan, V.; Pradeep, B.

    2014-05-01

    Polycrystalline thin films of silver antimony selenide have been deposited using a reactive evaporation technique onto an ultrasonically cleaned glass substrate at a vacuum of 10-5 torr. The preparative parameters, like substrate temperature and incident fluxes, have been properly controlled in order to get stoichiometric, good quality and reproducible thin film samples. The samples are characterized by XRD, SEM, AFM and a UV—vis—NIR spectrophotometer. The prepared sample is found to be polycrystalline in nature. From the XRD pattern, the average particle size and lattice constant are calculated. The dislocation density, strain and number of crystallites per unit area are evaluated using the average particle size. The dependence of the electrical conductivity on the temperature has also been studied and the prepared AgSbSe2 samples are semiconducting in nature. The AgSbSe2 thin films exhibited an indirect allowed optical transition with a band gap of 0.64 eV. The compound exhibits promising thermoelectric properties, a large Seebeck coefficient of 30 mV/K at 48 K due to strong phonon electron interaction. It shows a strong temperature dependence on thermoelectric properties, including the inversion of a dominant carrier type from p to n over a low temperature range 9-300 K, which is explained on the basis of a phonon drag effect.

  13. Raman monitoring of In and Ag growth on PTCDA and DiMe-PTCDI thin films

    International Nuclear Information System (INIS)

    The formation of In and Ag interfaces with 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) and N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic diimide (DiMe-PTCDI) was investigated by in situ Raman spectroscopy in order to determine the interaction between the metals and the organic molecules. A significant enhancement of internal vibrational modes is observed in all cases, clearly indicating the presence of surface enhanced Raman scattering. The molecules having direct contact with the metal are involved in a weak ground state dynamical charge transfer resulting in a breakdown of selection rules. However, there is no indication for the formation of new chemical bonds. In the case of In deposition on PTCDA, this contradicts previous models of covalent bond formation between In and O atoms in PTCDA. The enhancement factors of the Raman signals can be employed to extract information on indiffusion and morphology of the metals. Both metals exhibit rough morphologies of different degrees and depending on the organic substrate. In addition, In shows the strongest tendency of indiffusion when deposited on PTCDA. This is corroborated by the rapid disappearance of intermolecular, i.e. phonon-like modes in the frequency range below 120 cm-1

  14. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  15. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  16. Enhancement in the excitonic spontaneous emission rates for Si nanocrystal multi-layers covered with thin films of Au, Ag, and Al.

    Science.gov (United States)

    Estrin, Y; Rich, D H; Rozenfeld, N; Arad-Vosk, N; Ron, A; Sa'ar, A

    2015-10-30

    The enhancement in the spontaneous emission rate (SER) for Ag, Au, and Al films on multilayer Si nanocrystals (SiNCs) was probed with time-resolved cathodoluminescence (CL). The SiNCs were grown on Si(100) using plasma enhanced chemical vapor deposition. Electron-hole pairs were generated in the metal-covered SiNCs by injecting a pulsed high-energy electron beam through the thin metal films, which is found to be an ideal method of excitation for plasmonic quantum heterostructures and nanostructures that are opaque to laser or light excitation. Spatially, spectrally, and temporally resolved CL was used to measure the excitonic lifetime of the SiNCs in metal-covered and bare regions of the same samples. The observed enhancement in the SER for the metal-covered SiNCs, relative to the SER for the bare sample, is attributed to a coupling of the SiNC excitons with surface plasmon polaritons (SPPs) of the thin metal films. A maximum SER enhancement of ∼2.0, 1.4 and 1.2 was observed for the Ag, Au, and Al films, respectively, at a temperature of 55 K. The three chosen plasmonic metals of Ag, Au, and Al facilitate an interesting comparison of the exciton-SPP coupling for metal films that exhibit varying differences between the surface plasmon energy, ω(sp), and the SiNC excitonic emission energy. A modeling of the temperature dependence of the Purcell enhancement factor, Fp, was performed and included the temperature dependence of the dielectric properties of the metals.

  17. Synthesis of ZnO Nanowires and Their Photovoltaic Application: ZnO Nanowires/AgGaSe2 Thin Film Core-Shell Solar Cell

    Directory of Open Access Journals (Sweden)

    Elif Peksu

    2015-01-01

    Full Text Available In this investigation, hydrothermal technique was employed for the synthesis of well-aligned dense arrays of ZnO nanowires (NWs on a wide range of substrates including silicon, soda-lime glass (SLG, indium tin oxide, and polyethylene terephthalate (PET. Results showed that ZnO NWs can be successfully grown on any substrate that can withstand the growth temperature (~90°C and precursor solution chemicals. Results also revealed that there was a strong impact of growth time and ZnO seed layer deposition route on the orientation, density, diameter, and uniformity of the synthesized nanowires. A core-shell n-ZnO NWs/p-AgGaSe2 (AGS thin film solar cell was fabricated as a device application of synthesized ZnO nanowires by decoration of nanowires with ~700 nm thick sputtering deposited AGS thin film layer, which demonstrated an energy conversion efficiency of 1.74% under 100 mW/cm2 of simulated solar illumination.

  18. Scintillation efficiency and X-ray imaging with the RE-Doped LuAG thin films grown by liquid phase epitaxy

    International Nuclear Information System (INIS)

    Very thin scintillator imaging plates have recently become of great interest. In high resolution X-ray radiography, very thin scintillator layers of about 5–20 μm are used to achieve 2D-spatial resolutions below 1 μm. Thin screens can be prepared by mechanical polishing from single crystals or by epitaxial growth on single-crystal substrates using the Liquid Phase Epitaxy technique (LPE). Other types of screens (e.g. deposited powder) do no reach required spatial resolutions. This work compares LPE-grown YAG and LuAG scintillator films doped with different rare earth ions (Cerium, Terbium and Europium). Two different fluxes were used in the LPE growth procedure. These LPE films are compared to YAG:Ce and LuAG:Ce screens made from bulk single crystals. Relative light yield was detected by a highly sensitive CCD camera. Scintillator screens were excited by a micro-focus X-ray source and the generated light was gathered by the CCD camera’s optical system. Scintillator 2D-homogeneity is examined in an X-ray imaging setup also using the CCD camera.

  19. Photocatalytic degradation of methylene blue using undoped and Ag-doped TiO{sub 2} thin films deposited by a sol-gel process: Effect of the ageing time of the starting solution and the film thickness

    Energy Technology Data Exchange (ETDEWEB)

    Guillen-Santiago, A.; Mayen, S.A.; Torres-Delgado, G.; Castanedo-Perez, R. [Laboratorio de Investigacion en Materiales, CINVESTAV-IPN, U. Queretaro, Apdo. Postal 1-798, Queretaro, Qro. 76001 (Mexico); Maldonado, A. [Departamento de Ingenieria. Electrica-SEES, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07000 (Mexico); Olvera, M. de la L, E-mail: molvera@cinvestav.mx [Departamento de Ingenieria, Electrica-SEES, CINVESTAV-IPN, Apdo. Postal 14-740, Mexico D.F. 07000 (Mexico)

    2010-10-25

    Undoped and Ag-doped TiO{sub 2} thin films were deposited on glass substrates by the sol-gel method. A novel propose to prepare the solution is the use of titanium monohydrate oxyacetyl acetonate as the starting reagent. The effect of the ageing time of the starting solution as well as the number of coatings on the photocatalytic degradation of methylene blue (MB) was studied. The variation of the absorption spectra shows the degradation of MB dissolved in water, as a result of the reaction produced on the surface of the films, and promoted by ultraviolet irradiation during 5 h. The results show an optimum photocatalytic activity, in the order of 35%, presented in the 5-immersion Ag-doped TiO{sub 2} thin films, deposited from 7- and 14-day aged solutions. On the other hand, the Ag-doped TiO{sub 2} films deposited at different coatings show small changes in the photocatalytic activity. Morphological studies show the presence of silver particles on the film surface, due to the different number of coatings, affecting the photocatalytic performance.

  20. Ion-modulated nonlinear electronic transport in carbon nanotube bundle/RbAg4I5 thin film composite nanostructures

    Science.gov (United States)

    Sun, Jia-Lin; Zhang, Wei; Wei, Jinquan; Gu, Bingfu

    2014-01-01

    We have explored the ion-modulated electronic transport properties of mixed ionic-electronic conductor (MIEC) composite nanostructures made of superionic conductor RbAg4I5 films and carbon nanotube (CNT) bundle spiderwebs. Our experimental and theoretical studies indicate that the formation of ion-electron bound states (IEBSs) leads to strong ion-electron interference effect and interesting electronic transport of CNT, such as nonlinear current-voltage (I-V) characteristics and novel temperature dependence of the current. With increasing temperature, the hybrid nanostructures show rich phases with different dependence of current on temperature, which is related to the structural phase transition of RbAg4I5 and the transition of dissociation of IEBSs. The ion-modulation of the electric conductivity in such MIEC composite nanostructures with great tunability has been used to design new ionic-electronic composite nano-devices with function like field effect transistor.

  1. Tuning the opto-electrical properties of SnO{sub 2} thin films by Ag{sup +1} and In{sup +3} co-doping

    Energy Technology Data Exchange (ETDEWEB)

    Mouchaal, Younes [Laboratoire de Physique des Couches Minces et Matériaux pour l’Electronique (LPCMME) Université de Oran, BP 1524 EL M-Naouer 31000, Oran (Algeria); Enesca, Alexandru, E-mail: aenesca@unitbv.ro [Center for Renewable Energy Systems and Recycling, R& D Institute of the Transilvania University of Brasov, Eroilor 29 Street, 500036, Brasov (Romania); Mihoreanu, Ciprian [Center for Renewable Energy Systems and Recycling, R& D Institute of the Transilvania University of Brasov, Eroilor 29 Street, 500036, Brasov (Romania); Khelil, Abdelbacet [Laboratoire de Physique des Couches Minces et Matériaux pour l’Electronique (LPCMME) Université de Oran, BP 1524 EL M-Naouer 31000, Oran (Algeria); Duta, Anca [Center for Renewable Energy Systems and Recycling, R& D Institute of the Transilvania University of Brasov, Eroilor 29 Street, 500036, Brasov (Romania)

    2015-09-15

    Graphical abstract: - Highlights: • Polycrystalline SnO{sub 2} tetragonal structure with preferential (1 1 0) orientation. • Silver segregation and oxidation threshold. • Suitable diode-type behavior observed for the samples rich in silver. • Higher silver doping (8–12 at%) increases the grains’ size. - Abstract: In this work transparent thin films of Ag{sup +1}-In{sup +3} co-doped SnO{sub 2} were obtained using robotic spray pyrolysis. The effect of silver doping concentration on their optical, electrical and structural properties was investigated. Silver co-doping was varied between 0 and 12 at% in the precursor solution keeping the concentration of indium fixed at 2 at%. The optical transmittance has values between 90.3 and 82.7%, when the Ag{sup +1} doping ranges from 0 to 12 at%. The X-ray diffraction shows a single SnO{sub 2} phase, for silver doping between 0 and 8 at%, and a new silver oxide phase when the silver increases up to 12 at%. The current–voltage characteristics show diode-like behavior for low and high doping concentrations, corresponding to 2 and 12 at%. The films exhibit photocurrent which is affected by the silver amount in the structure. The highest and most stable generated photocurrent was achieved for samples with 12 at% Ag{sup +1}.

  2. A Comparison of Modifications Induced by Li3+ and Ag14+ Ion Beam in Spectroscopic Properties of Bismuth Alumino-Borosilicate Glass Thin Films

    Directory of Open Access Journals (Sweden)

    Ravneet Kaur

    2013-01-01

    Full Text Available Ion irradiation effects on the glass network and structural units have been studied by irradiating borosilicate glass thin film samples with 50 MeV Li3+ and 180 MeV Ag14+ swift heavy ions (SHI at different fluence rates ranging from 1012 ions/cm2 to 1014 ions/cm2. Glass of the composition (65-x Bi2O3-10Al2O3-(65-y B2O3-25SiO2 (x = 45, 40; y = 20, 25 has been prepared by melt quench technique. To study the effects of ionizing radiation, the glass thin films have been prepared from these glasses and characterized using XRD, FTIR, and UV-Vis spectroscopic techniques. IR spectra are used to study the structural arrangements in the glass before and after irradiation. The values of optical band gap, Urbach energy, and refractive index have been calculated from the UV-Vis measurements. The variation in optical parameters with increasing Bi2O3 content has been analyzed and discussed in terms of changes occurring in the glass network. A comparative study of the influence of Li3+ ion beam on structural and optical properties of the either glass system with Ag14+ ion is done. The results have been explained in the light of the interaction that SHI undergo on entering the material.

  3. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  4. Effect of 100 MeV Ag+7 ion irradiation on the bulk and surface magnetic properties of Co-Fe-Si thin films

    Science.gov (United States)

    Hysen, T.; Geetha, P.; Al-Harthi, Salim; Al-Omari, I. A.; Lisha, R.; Ramanujan, R. V.; Sakthikumar, D.; Avasthi, D. K.; Anantharaman, M. R.

    2014-12-01

    Thin films of Co-Fe-Si were vacuum evaporated on pre-cleaned float glass substrates employing thermal evaporation. The films were subsequently irradiated with 100 MeV Ag+7 ions at fluences of 1×1011, 1×1012 and 1×1013 ions/cm2. The pristine and irradiated samples were subjected to surface analysis using Atomic Force Microscopy (AFM), Vibrating Sample Magnetometry (VSM) and Magneto Optic Kerr Effect (MOKE) measurements. The as deposited film has a root mean square roughness (Rq) of 8.9 nm and an average roughness of (Ra) 5.6 nm. Irradiation of the as deposited films with 100 MeV Ag7+ ions modifies the surface morphology. Irradiating with ions at fluences of 1×1011 ions/cm2 smoothens the mesoscopic hill-like structures, and then, at 1×1012 ions/cm2 new surface structures are created. When the fluence is further increased to 1×1013 ions/cm2 an increase in the surface roughness is observed. The MOKE loop of as prepared film indicated a squareness ratio of 0.62. As the film is irradiated with fluences of 1×1011 ions/cm2, 1×1012 ions/cm2 and 1×1013 ions/cm2 the squareness ratio changes to 0.76, 0.8 and 0.86 respectively. This enhancement in squareness ratio towards 1 is a typical feature when the exchange interaction starts to dominates the inherent anisotropies in the system. The variation in surface magnetisation is explained based on the variations in surface roughness with swift heavy ion (SHI) irradiation.

  5. Thin films on cantilevers

    NARCIS (Netherlands)

    Nazeer, Hammad

    2012-01-01

    The main goal of the work compiled in this thesis is to investigate thin films for integration in micro electromechanical systems (MEMS). The miniaturization of MEMS actuators and sensors without compromising their performance requires thin films of different active materials with specific propertie

  6. Microstructure and temperature dependence of microwave penetration depth of Ag doped Y1Ba2Cu3O7-x thin films

    International Nuclear Information System (INIS)

    We report the measurements of magnetic penetration depth λ(T) of Ag-doped YBa2Cu3O7-δ (YBCO) thin films in the thickness rAe 1500-4000 A and temperature rAe 18-88 K. The films are in situ grown by laser ablation on LaAlO3 substrates. The penetration depth measurements are performed by microstrip resonator technique. A correlation of λ(T) with the film microstructure observed with atomic force microscopy has shown that λ(T) depends critically on the film microstructure. Temperature dependence of magnetic penetration depth has also been studied for best quality films. The experimental results are discussed in terms of BCS theory (s-wave pairing) and d-wave Pairing with and without unitary scattering. The results are found to be best fitted to the d-wave model with unitary scattering limit. Near Tc, we have also compare the (3D) XY critical regime and the Ginzburg-Landau (GL) behaviour

  7. Investigation on the dielectric response of NdMnO3/LSAT thin films: Effect of 200 MeV Ag+15 ion irradiation

    Science.gov (United States)

    Udeshi, Malay; Vyas, Brinda; Trivedi, Priyanka; Katba, Savan; Ravalia, Ashish; Solanki, P. S.; Shah, N. A.; Asokan, K.; Ojha, S.; Kuberkar, D. G.

    2015-12-01

    We report the results of the modifications in structural and dielectric behaviour of pulsed laser deposited NdMnO3 manganite thin films grown on (1 0 0) single crystalline (LaAlO3)0.3 (Sr2AlTaO6)0.7 substrate irradiated with the 200 MeV Ag+15 ion irradiation having different fluences, ∼5 × 1010, ∼5 × 1011, ∼5 × 1012 ions/cm2. Structural strain was quantified using analysis of X-ray Diffraction data while Rutherford Backscattering measurements were performed on pristine NdMnO3 film to confirm the elemental composition, thickness and oxygen content. Dielectric measurements performed on all the irradiated films show that, the dielectric constant decreases with increase in ion fluence which has been correlated with the irradiation induced increase in strain at the film-substrate interface. The dielectric relaxation behaviour of pristine and irradiated NdMnO3 films have been understood by fitting the dielectric data using the Cole-Cole plots.

  8. Enhancement of wettability and antibiotic loading/release of hydroxyapatite thin film modified by 100 MeV Ag{sup 7+} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Elayaraja, K. [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Rajesh, P. [Biomedical Technology Wing, Sree Chitra Tirunal Institute for Medical Sciences and Technology, Poojappura, Thiruvananthapuram 695 012 (India); Ahymah Joshy, M.I.; Sarath Chandra, V.; Suganthi, R.V. [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Kennedy, J. [National Isotope Centre, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand); Kulriya, P.K.; Sulania, I.; Asokan, K.; Kanjilal, D.; Avasthi, D.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Varma, H.K. [Biomedical Technology Wing, Sree Chitra Tirunal Institute for Medical Sciences and Technology, Poojappura, Thiruvananthapuram 695 012 (India); Narayana Kalkura, S., E-mail: kalkurasn@annauniv.edu [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer Reduction in particle size on irradiation leading to nanosized HAp. Black-Right-Pointing-Pointer Enhancement of surface roughness and bioactivity on irradiation. Black-Right-Pointing-Pointer Irradiation at lower fluence transforms the surface hydrophobic. Black-Right-Pointing-Pointer The surface turned hydrophilic at higher fluence. Black-Right-Pointing-Pointer Improved drug (amoxicillin) loading on irradiated samples. - Abstract: The effect of swift heavy 100 MeV Ag{sup 7+} ions irradiation was studied on hydroxyapatite (HAp) thin film prepared by pulsed laser deposition technique (PLD). The GIXRD analysis confirmed the absence of any phase in the HAp phase due to irradiation. In addition, there was a considerable decrease in crystallinity and crystallite size on irradiation. There was no significant variation in the stoichiometry of the irradiated films. Irradiation seemed to decrease the optical band gap energy of HAp thin films. The surface roughness, wettability and bioactivity were improved on irradiation of the samples. Amount of amoxicillin loading/release increased (10%) in ion beam irradiated (1 Multiplication-Sign 10{sup 12} ions cm{sup -2}) sample. Irradiated sample showed fast rate of amoxicillin (AMX) release than the pristine. Bactericidal effect was found to increase on irradiation. Surface modified and antibiotics incorporated HAp coated titanium implants may be used to prevent post-surgical infections and to promote bone-bonding of orthopedic devices.

  9. Temperature studies of optical parameters of (Ag3AsS3)0.6(As2S3)0.4 thin films prepared by rapid thermal evaporation and pulse laser deposition

    Science.gov (United States)

    Studenyak, I. P.; Kutsyk, M. M.; Buchuk, M. Yu.; Rati, Y. Y.; Neimet, Yu. Yu.; Izai, V. Yu.; Kökényesi, S.; Nemec, P.

    2016-02-01

    (Ag3AsS3)0.6(As2S3)0.4 thin films were deposited using rapid thermal evaporation (RTE) and pulse laser deposition (PLD) techniques. Ag-enriched micrometre-sized cones (RTE) and bubbles (PLD) were observed on the thin film surface. Optical transmission spectra of the thin films were studied in the temperature range 77-300 K. The Urbach behaviour of the optical absorption edge in the thin films due to strong electron-phonon interaction was observed, the main parameters of the Urbach absorption edge were determined. Temperature dependences of the energy position of the exponential absorption edge and the Urbach energy are well described in the Einstein model. Dispersion and temperature dependences of refractive indices were analysed; a non-linear increase of the refractive indices with temperature was revealed. Disordering processes in the thin films were studied and compared with bulk composites, the differences between the thin films prepared by RTE and PLD were analysed.

  10. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  11. Study of semiconducting parameters in dark as well as in presence of light for Se90X10 (X=Ag,In) thin films

    Science.gov (United States)

    Singh, N. K.; Kumar, Anjani; Kumar, D.; Shukla, S.

    2016-05-01

    The present paper reports the study of semiconducting parameters (activation energy and pre-exponential factor) in glassy samples of Se90X10 (X= Ag, In) in dark as well as in presence of light. Temperature dependence of dark and photo-conductivity is measured in amorphous thin films in the temperature range 300-378 K and in the intensity range 2000-18000 Lux. A straight line between lnσ0 and ΔE indicates the presence of Meyer - Neldel (MN) rule in dark as well as in presence of light. Linear dependence of ln(σ0) on ΔE in case of amorphous material indicate that the conduction band tails a finite energy distance towards the valence band and a Fermi level which is controlled by fixed dominant hole levels deeper in the gap.

  12. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  13. Electrical characterization of Al, Ag and In contacts on CuInS{sub 2} thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Peza-Tapia, Juan Manuel; Morales-Acevedo, Arturo; Ortega-Lopez, Mauricio [CINVESTAV del IPN, Electrical Engineering Department, Av. IPN No. 2508, Mexico 07360, D.F. (Mexico)

    2009-05-15

    The specific contact resistivity ({rho}{sub C}) for aluminum (Al), silver (Ag) and indium (In) metallic contacts on CuInS{sub 2} thin films was determined from I-V measurements, with the purpose of having the most appropriate ohmic contact for TCO/CdS/CuInS{sub 2} solar cells; {rho}{sub C} was measured using the transmission line method (TLM) for the metallic contacts evaporated on CuInS{sub 2} thin films deposited by spray pyrolysis with ratios x=[Cu]/[In]=1.0, 1.1, 1.3 and 1.5 in the spray solution. The results show that In contacts have the lowest {rho}{sub C} values for CuInS{sub 2} samples grown with x=1.5. The minimum {rho}{sub C} was 0.26 {omega} cm{sup 2} for the In contacts. This value, although not very low, will allow the fabrication of CuInS{sub 2} solar cells with a small series resistance. (author)

  14. Evolution of structural and magnetic properties of Co-doped TiO2 thin films irradiated with 100 MeV Ag7+ ions

    Science.gov (United States)

    Mohanty, P.; Singh, V. P.; Mishra, N. C.; Ojha, S.; Kanjilal, D.; Rath, Chandana

    2014-08-01

    In continuation to our earlier studies where we have shown room temperature ferromagnetism observed in TiO2 and Co-doped TiO2 (CTO) thin films independent of their phase (Mohanty et al 2012 J. Phys. D: Appl. Phys. 45 325301), here the modifications in structure and magnetic properties in CTO thin films using 100 MeV Ag7+ ion irradiation are reported. Owing to the important role of defects in tailoring the magnetic properties of the material, we vary the ion fluence from 5 × 1011 to 1 × 1012 ions cm-2 to create post-deposition defects. While the film deposited under 0.1 mTorr oxygen partial pressure retains its crystallinity showing radiation-resistant behaviour even at a fluence of 1 × 1012 ions cm-2, films deposited under 1 to 300 mTorr oxygen partial pressure becomes almost amorphous at the same fluence. Using Poisson's law, the diameter of the amorphized region surrounding the ion path is calculated to be ˜4.2 nm from the x-ray diffraction peak intensity ((1 1 0) for rutile phase) as a function of ion fluence. The saturation magnetization (Ms) decreases exponentially similar to the decrease in x-ray peak intensity with fluence, indicating magnetic disordered region surrounding the ion path. The diameter of the magnetic disordered region is found to be ˜6.6 nm which is larger than the diameter of the amorphized latent track. Therefore, it is confirmed that swift heavy ion irradiation induces a more significant magnetic disorder than the structural disorder.

  15. Evaporated VOx Thin Films

    Science.gov (United States)

    Stapinski, Tomasz; Leja, E.

    1989-03-01

    VOx thin films on glass were obtained by thermal evaporation of V205, powder. The structural investigations were carried out with the use of X-ray diffractometer. The electrical properties of the film were examined by means of temperature measurements of resistivity for the samples heat-treated in various conditions. Optical transmission and reflection spectra of VOX films of various composition showed the influence of the heat treatment.

  16. Heterogeneity in Polymer Thin Films

    OpenAIRE

    Kanaya, Toshiji; Inoue, Rintaro; Nishida, Koji

    2011-01-01

    In the last two decades very extensive studies have been performed on polymer thin films to reveal very interesting but unusual properties. One of the most interesting findings is the decrease in glass transition temperature Tg with film thickness in polystyrene (PS) thin film supported on Si substrate. Another interesting finding is apparent negative thermal expansivity in glassy state for thin films below ∼25 nm. In order to understand the unusual properties of polymer thin films we have st...

  17. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  18. Thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K; Ullal, H S

    1989-05-01

    Thin films are considered a potentially attractive technological approach to making cost-effective electricity by photovoltaics. Over the last twenty years, many have been investigated and some (cadmium telluride, copper indium diselenide, amorphous silicon) have become leading candidates for future large-scale commercialization. This paper surveys the past development of these key thin films and gives their status and future prospects. In all cases, significant progress toward cost-effective PV electricity has been made. If this progress continues, it appears that thin film PV could provide electricity that is competitive for summer daytime peaking power requirements by the middle of the 1990s; and electricity in a range that is competitive with fossil fuel costs (i.e., 6 cents/kilowatt-hour) should be available from PV around the turn of the century. 22 refs., 9 figs.

  19. Thin film temperature sensor

    Science.gov (United States)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  20. Thin Film Microbatteries

    International Nuclear Information System (INIS)

    Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm2. For very small battery areas, 2, microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li+ ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

  1. Thin film superfluid optomechanics

    CERN Document Server

    Baker, Christopher G; McAuslan, David L; Sachkou, Yauhen; He, Xin; Bowen, Warwick P

    2016-01-01

    Excitations in superfluid helium represent attractive mechanical degrees of freedom for cavity optomechanics schemes. Here we numerically and analytically investigate the properties of optomechanical resonators formed by thin films of superfluid $^4$He covering micrometer-scale whispering gallery mode cavities. We predict that through proper optimization of the interaction between film and optical field, large optomechanical coupling rates $g_0>2\\pi \\times 100$ kHz and single photon cooperativities $C_0>10$ are achievable. Our analytical model reveals the unconventional behaviour of these thin films, such as thicker and heavier films exhibiting smaller effective mass and larger zero point motion. The optomechanical system outlined here provides access to unusual regimes such as $g_0>\\Omega_M$ and opens the prospect of laser cooling a liquid into its quantum ground state.

  2. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  3. Dependence of Quantum Yields on Size of Ag Nano-particle Embedded in BaO Thin Film

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Theoretical dependence of the quantum yields on the size of Ag nano-particle distribution from 0.8nm to 37nm embedded in BaO semiconductor is discussed. The calculation results show that the increase in Ag nano-particle diameter leads to the increase of the quantum yield threshold and the emergence of the rough Gaussian form, the results also show that the greater increase in Ag nano-particle diameter causes the emergence of the exact Gaussian form and makes the peaks rise up.

  4. Microwave characteristics of sol-gel based Ag-doped (Ba{sub 0.6}Sr{sub 0.4})TiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyoung-Tae; Kim, Cheolbok [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States); Senior, David E. [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States); Department of Electrical and Electronic Engineering, Universidad Tecnológica de Bolívar Cartagena, 130011 Colombia (Colombia); Kim, Dongsu [Packaging Research Center, Korea Electronics Technology Institute, Gyeonggi-do, 463-816 (Korea, Republic of); Yoon, Yong-Kyu, E-mail: ykyoon@ece.ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States)

    2014-08-28

    Dielectric Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films with a different concentration of Ag-dopant of 0.5, 1, 1.5, 2, 3, and 5 mol % have been prepared using an alkoxide-based sol-gel method on a Pt(111)/TiO{sub 2}/SiO{sub 2}/Si substrate and their surface morphology and crystallinity have been examined using scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis, respectively. An on-chip metal-insulator-metal capacitor has been fabricated with the prepared thin film ferroelectric sample. Concentric coplanar electrodes are used for high frequency electrical characterization with a vector network analyzer and a probe station. The SEM images show that increasing Ag doping concentration leads to a decrease in grain size. XRD reveals that the fabricated films show good BST crystallinity for all the concentration while a doping concentration of 5 mol % starts to show an Ag peak, implying a metallic phase. Improved microwave dielectric loss properties of the BST thin films are observed in a low Ag doping level. Especially, BST with an Ag doping concentration of 1 mol % shows the best properties with a dielectric constant of 269.3, a quality factor of 48.1, a tunability at the electric field of 100 kV/cm of 41.2 %, a leakage-current density of 1.045 × 10{sup −7}A/cm{sup 2} at an electric field of 100 kV/cm and a figure of merit (defined by tunability (%) divided by tan δ (%)) of 19.59 under a dc bias voltage of 10 V at 1 GHz. - Highlights: • High quality Ag-doped Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films were derived by the sol-gel method. • Doped Ag replaced the A site ions in the ABO{sub 3} type structure. • Doped Ag helped lower leakage current by filling oxygen vacancies, which is a leakage path. • Microwave characteristics of low dielectric loss and good tunability were confirmed. • Great potential is envisioned for low loss tunable microwave applications.

  5. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  6. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  7. The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications

    Directory of Open Access Journals (Sweden)

    A. Tombak

    2015-01-01

    Full Text Available In the current paper, the physical properties and microelectronic parameters of direct current (DC sputtered p-type CuO film and diode have been investigated. The film of CuO as oxide and p-type semiconductor is grown onto glass and n-Si substrates by reactive DC sputtering at 250 °C. After deposition, a post-annealing procedure is applied at various temperatures in ambient. Through this research, several parameters are determined such structural, optical and electrical magnitudes. The thickness of CuO thin films goes from 122 to 254 nm. A (111-oriented cubic crystal structure is revealed by X-ray analysis. The grain size is roughly depending on the post-annealing temperature, it increases with temperature within the 144–285 nm range. The transmittance reaches 80% simultaneously in visible and infrared bands. The optical band gap is varied between 1.99 and 2.52 eV as a result of annealing temperature while the resistivity and the charge carrier mobility decrease with an increase in temperature from 135 to 14 Ω cm and 0.92 to 0.06 cm2/Vs, respectively. The surface of samples is homogenous, bright dots are visible when temperature reaches the highest value. As a diode, Ag/CuO/n-Si exhibits a non-ideal behavior and the ideality factor is about 3.5. By Norde method, the barrier height and the series resistance are extracted and found to be 0.96 V and 86.6 Ω respectively.

  8. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  9. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  10. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  11. Protein Thin Film Machines

    OpenAIRE

    Federici, Stefania; Oliviero, Giulio; Hamad-Schifferli, Kimberly; Bergese, Paolo

    2010-01-01

    We report the first example of microcantilever beams that are reversibly driven by protein thin film machines fuelled by cycling the salt concentration of the surrounding solution. We also show that upon the same salinity stimulus the drive can be completely reversed in its direction by introducing a surface coating ligand. Experimental results are throughout discussed within a general yet simple thermodynamic model.

  12. SiO2/TiO2/n-Si/Ag(Cr)/TiO2 thin films with superhydrophilicity and low-emissivity

    Science.gov (United States)

    Loka, Chadrasekhar; Ryeol Park, Kyoung; Lee, Kee-Sun

    2016-01-01

    In this study, SiO2/TiO2/n-Si/Ag(Cr)/TiO2 multilayer structures have been designed and deposited by the RF and DC magnetron sputtering at room temperature. The as-deposited TiO2/glass films which are initially amorphous in nature were subjected to post annealing at 673 K for anatase phase TiO2. The anatase TiO2 films showed an optical bandgap ˜3.32 eV. The Ag(Cr)/TiO2 showed very low-emissivity (low-e) value ˜0.081 which is evaluated by using the sheet resistance (6.51 Ω/□) of the films. All the deposited films showed high visible transmittance (˜81%) and high infrared reflectance (72%) which are recorded by using the UV-vis-NIR spectrophotometer. In addition, experimentally obtained optical properties were in good agreement with the simulation data. The TiO2/n-Si heterojunction concept has been employed to enhance the superhydrophilicity of the deposited multilayer stack, TiO2/n-Si/Ag(Cr)/TiO2 films exhibited best superhydrophilicity with water contact angle ˜2°. The deposited multilayer structures SiO2/TiO2/n-Si/Ag(Cr)/TiO2 and TiO2/n-Si/Ag(Cr)/TiO2 achieved significant low-e and superhydrophilicity.

  13. [Spectral emissivity of thin films].

    Science.gov (United States)

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  14. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  15. 银基复合透明导电薄膜作为薄膜太阳能电池前电极的研究%The research on Ag/TCO tandem film front electrode for thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    陈宇; 曾祥斌; 陈晓晓

    2015-01-01

    提出采用超薄银薄膜和具有陷光结构的薄TCO薄膜组成的复合膜层作为薄膜太阳能电池前电极,有效利用了超薄银膜的高电导性、高透过性,并解决了单银膜无法制作陷光结构以及在产业化生产过程中存在的激光选择性刻划问题。实验采用直流磁控溅射法在9个不同厚度的SnO2:F薄膜导电玻璃上制备方阻为3/,透过率为89%,厚度为10-15nm的超薄银膜构成前电极,并采用相同的工艺制作成单节的非晶硅薄膜太阳能电池组件,结果表明,方阻为80/的SnO2:F薄膜与超薄银膜构成的前电极能获得最佳的非晶硅薄膜太阳能电池输出性能,相比于普通的非晶硅薄膜太阳能电池输出功率提升了4%。%An Ag/TCO tandem film are used as front electrode of thin film solar cells, which are composed of super thin Ag film and a textured thin TCO film. This Ag/TCO tandem film has the advantage of high transparency and high conductivity of super thin Ag film. Meanwhile, it solved the laser scribing problems when use Ag film as front electrode in the industry manufacturing processes of thin film solar cells. In experimental, 9 glasses with different thickness SnO2:F film on it are deposited 3/, optical transparent 89%, thickness in 10-15nm super thin Ag film with DC magnet sputtering technology. And these samples are manufactured as a-Si thin film solar panels in same processes. The result shows that when the SnO2:F film have a 80/ sheet resistance it could get the best performance in a-Si solar cells with 4% increase in output power than traditional a-Si solar cells.

  16. Chiral atomically thin films

    Science.gov (United States)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  17. An optical fiber hydrogen sensor with Pd/Ag film

    Institute of Scientific and Technical Information of China (English)

    CUI Lu-jun; CHEN You-ping; ZHANG Gang

    2009-01-01

    A 20 nanometer palladium-silver (Pd/Ag) ultra-thin film was used for hydrogen gas sensing. The atomic ratio of Pd: Ag was 3:1, the thin film was evaporated on the optical glass, the Pd/Ag alloy could increase the life and provide the stability of the sensing film. The artificial neutral network was used for processing the data collected from the optical fiber bundle hydro-gen sensor, which could enhance the measuring accuracy, at the same time, the intrinsic and extrinsic influences were eliminated mainly. Experimental results and numerical simulation show the training method available, a linear precision of 0.1% for the optical hydrogen sensor is achieved.

  18. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  19. Reactivity of Ultra-Thin ZnO Films Supported by Ag(111) and Cu(111): A Comparison to ZnO/Pt(111)

    OpenAIRE

    Pan, Q.; B. Liu; McBriarty, M.; Martynova, Y.; Groot, I. de; Wang, S.; Bedzyk, M.; Shaikhutdinov, S.; Freund, H.

    2014-01-01

    We studied structure and reactivity of ZnO(0001) ultrathin films grown on Ag(111) and Cu(111) single crystal surfaces. Structural characterization was carried out by scanning tunneling microscopy, Auger electron spectroscopy, low-energy electron diffraction, and temperature programmed desorption. The CO oxidation behavior of the films was studied at low temperature (450 K) at near atmospheric pressures using gas chromatography. For ZnO/Cu(111), it is shown that under reaction conditions ZnO r...

  20. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  1. Thin film interconnect processes

    Science.gov (United States)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  2. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  3. Preparation and characterization of metallic supported thin Pd-Ag membranes for hydrogen separation

    OpenAIRE

    Fernandez, Ekain; Medrano, Jose Antonio; Melendez, Jon; Parco, Maria; Viviente, J.L.; van Sint Annaland, Martin; Gallucci, Fausto; Pacheco Tanaka, David A.

    2015-01-01

    This paper reports the preparation and characterization of thin-film (4-5 µm thick) Pd-Ag metallic supported membranes for high temperature applications. Various thin film membranes have been prepared by depositing a ceramic interdiffusion barrier layer prior to the simultaneous Pd-Ag electroless plating deposition. Two deposition techniques for ceramic layers (made of zirconia and alumina) have been evaluated: atmospheric plasma spraying and dip coating of a powder suspension. Initially, the...

  4. Thin film mechanics

    Science.gov (United States)

    Cooper, Ryan C.

    This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate

  5. Effect of BaZrO3/Ag hybrid doping to the microstructure and performance of fluorine-free MOD method derived YBa2Cu3O7−x superconducting thin films

    DEFF Research Database (Denmark)

    Tang, Xiao; Yue, Zhao; Wu, W.;

    2015-01-01

    It is known that BaZrO3 and Ag can improve the magnetic and transport performance of YBCO thin film through totally disparate ways. BaZrO3 plays the role of flux pinning centers and Ag improves the transparency of the YBCO grain boundaries. However, similar research is rare on the fluorine-free d...

  6. Polycrystalline thin film photovoltaic technology

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  7. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  8. Synthesis and resistive switching behaviour of ZnMnO3 thin films with an Ag/ZnMnO3/ITO unsymmetrical structure

    Indian Academy of Sciences (India)

    Hua Wang; Shu-Ming Gao; Ji-Wen Xu; Chang-Lai Yuan; Xiao-Wen Zhang

    2015-02-01

    Single-phase MnZnO3 films were prepared on glass substrates coated with the use of indium tin oxide (ITO) as transparent bottom electrode via the sol–gel method. The effects of annealing temperature on structure, resistance switching behaviour and endurance characteristics of the ZnMnO3 films were investigated. The stable resistive switching behaviour with high resistance ratio in Ag/ZnMnO3/ITO unsymmetrical structure was observed. No second phase is detected, and the crystallinity of the MnZnO3 films is improved with the increase in annealing temperature from 350 to 400°C. The MnZnO3 films annealed at 350–450°C with an Ag/MnZnO3/ITO structure exhibit bipolar resistive switching behaviour. Ohmic and space-charge-limited conductions are the dominant mechanisms at low and high resistance states, respectively. $V{}_{\\text{ON}},\\ \\text{V_{OFF}}$ and $R_{\\text{HRS}}/R_{\\text{LRS}}$ of theMnZnO3 films increase with the increase in annealing temperature. Improved endurance characteristics are observed in the samples annealed at 350 and 400°C. The endurance of the MnZnO3 films degrades when annealed at >450°C.

  9. Improving Efficiency of Evaporated Cu2ZnSnS4 Thin Film Solar Cells by a Thin Ag Intermediate Layer between Absorber and Back Contact

    Directory of Open Access Journals (Sweden)

    Hongtao Cui

    2015-01-01

    Full Text Available A 20 nm Ag coating on Mo back contact was adopted to improve the back contact of evaporated Cu2ZnSnS4 (CZTS solar cells. The Ag layer helped reduce the thickness of MoS2 which improves fill factor (FF significantly; additionally, it reduced secondary phases ZnS and SnS2−x, which may help carrier transport; it was also involved in the doping of the absorber layer, which compensated the intrinsic p-type doping and therefore drags down the doping level. The doping involvement may enlarge the depletion region and improve lifetime of the absorber, which led to enhancing open circuit voltage (VOC, short circuit current density (JSC, and efficiency significantly. However, it degrades the crystallinity of the material slightly.

  10. Optical properties of rubrene thin film prepared by thermal evaporation

    Institute of Scientific and Technical Information of China (English)

    陈亮; 邓金祥; 孔乐; 崔敏; 陈仁刚; 张紫佳

    2015-01-01

    Rubrene thin films are deposited on quartz substrates and silver nanoparticles (Ag NPs) films by the thermal evapo-ration technique. The optical properties of rubrene thin film are investigated in a spectral range of 190 nm–1600 nm. The analysis of the absorption coefficient (α) reveals direct allowed transition with a corresponding energy of 2.24 eV. The photoluminescence (PL) peak of the rubrene thin film is observed to be at 563 nm (2.21 eV). With the use of Ag NPs which are fabricated by radio-frequency (RF) magnetron sputtering on the quartz, the PL intensity is 8.5 times that of as-deposited rubrene thin film. It is attributed to the fact that the surface plasmon enhances the photoluminescence.

  11. Quantum-well-induced ferromagnetism in thin films

    DEFF Research Database (Denmark)

    Niklasson, A.M.N.; Mirbt, S.; Skriver, Hans Lomholt;

    1997-01-01

    We have used a first-principles Green's-function technique to investigate the magnetic properties of thin films of Rh, Pd, and Pt deposited on a fee Ag (001) substrate. We find that the magnetic moment of the film is periodically suppressed and enhanced as a function of film thickness....... The phenomenon is explained in terms of quantum-well states moving through the Fermi level with increasing film thickness....

  12. Polycrystalline thin films

    Science.gov (United States)

    Zweibel, K.; Mitchell, R.; Ullal, H.

    1987-02-01

    This annual report for fiscal year 1986 summarizes the status, accomplishments, and projected future research directions of the Polycrystalline Thin Film Task in the Photovoltaic Program Branch of the Solar Energy Research Institute's Solar Electric Research Division. Subcontracted work in this area has concentrated on the development of CuInSe2 and CdTe technologies. During FY 1986, major progress was achieved by subcontractors in (1) achieving 10.5% (SERI-verified) efficiency with CdTe, (2) improving the efficiency of selenized CuInSe2 solar cells to nearly 8%, and (3) developing a transparent contact to CdTe cells for potential use in the top cells of tandem structures.

  13. Polyimide Aerogel Thin Films

    Science.gov (United States)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  14. Early stage fractal growth in thin films below the percolation limit

    Science.gov (United States)

    Batabyal, R.; Mahato, J. C.; Das, Debolina; Dev, B. N.

    2013-02-01

    We demonstrate the fractal growth of epitaxial Ag thin films on Si(111) surfaces using scanning tunneling microscopy (STM). The initial stage growth of Ag thin films provides islands of compact shape. These compact-shaped two-dimensional (2D) islands follow the Euclidian dimension 2. As the islands grow they become fractal in nature. The fractal (Hausdorff) dimension of the islands depends on the coverage of the Ag thin films. The mechanism responsible for this fractal nature of the Ag nanostructures varies from diffusion limited aggregation (DLA) to diffusion limited cluster aggregation (DLCA).

  15. Reflectance improvement by thermal annealing of sputtered Ag/ZnO back reflectors in a-Si:H thin film silicon solar cells

    DEFF Research Database (Denmark)

    Haug, Franz-Josef; Söderström, Karin; Pahud, Céline;

    2011-01-01

    Silver can be used as the back contact and reflector in thin film silicon solar cells. When deposited on textured substrates, silver films often exhibit reduced reflectance due to absorption losses by the excitation of surface plasmon resonances. We show that thermal annealing of the silver back...... reflector increases its reflectance drastically. The process is performed at low temperature (150°C) to allow the use of plastic sheets such as polyethylene naphthalate and increases the efficiency of single junction amorphous solar cells dramatically. We present the best result obtained on a flexible...

  16. Thin functional conducting polymer films

    OpenAIRE

    Tian, S.

    2005-01-01

    In the present study, thin functional conducting polyaniline (PANI) films, either doped or undoped, patterned or unpatterned, were prepared by different approaches. The properties of the obtained PANI films were investigated in detail by a combination of electrochemistry with several other techniques, such as SPR, QCM, SPFS, diffraction, etc. The sensing applications (especially biosensing applications) of the prepared PANI films were explored. Firstly, the pure PANI films were prepar...

  17. Interfaces and thin films physics

    International Nuclear Information System (INIS)

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described

  18. Ag3PO4/Ni纳米薄膜降解罗丹明B的光电催化性能和反应机理%Photoelectrocatalytic property and reaction mechanism of Ag3PO4/Ni nano thin film for degrading rhodamine B

    Institute of Scientific and Technical Information of China (English)

    李爱昌; 赵娣; 刘盼盼; 孙少敏; 刘萌

    2015-01-01

    Ag3PO4/Ni thin films were prepared by electrochemical method. The surface morphology, phase structure, optical characteristics and band structure of the thin film were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD) and ultraviolet-visible diffuse reflectance spectroscopy (UV-Vis DRS), respectively. The photoelectrocatalytic properties and stability of this coating were evaluated with rhodamine B(RhB) as a model compound. Through adding active species scavenger and removing oxygen with nitrogen to the solution, the mechanism of photoelectrocatalytic degradation of the film was explored. The mechanisms of photoeletrocatalytic reaction on the film for RhB under visible irradiation were inputted. The results show that, under optimum conditions, the Ag3PO4/Ni thin film prepared is composed of nano particles and it has dense and layered surface structure. The film has high photoelectrocatalytic activity. At optimum anodic bias, the photoeletrocatalytic degradation rate of Ag3PO4/Ni thin film is 6.69 times as that of porous P25 TiO2 /ITO nanofilm. Compared the coating without anodic bias, the photoeletrocatalytic degradation rate for the Ag3PO4/Ni thin film to RhB increases by 5.34 times and the thin film has obvious photoelectric synergistic effect. Especially, the film has excellent photocatalytic and photoelectrocatalytic stability. At 0.1 V anodic bias, its photoeletrocatalytic stability increases by about one time than its photocatalytic stability without anodic bias.%采用电化学方法制备 Ag3PO4/Ni 薄膜,以扫描电镜(SEM)、X 射线衍射(XRD)和紫外-可见漫反射光谱(UV-Vis DRS)对薄膜的表面形貌、晶相结构、光谱特性及能带结构进行表征,以罗丹明B为模拟污染物对薄膜的光电催化活性和稳定性进行测定,采用向溶液中加入活性物种捕获剂和通氮除氧方法对薄膜的光催化降解机理进行探索,并提出光电催化降解罗丹明B的反应机理.结果表明:最佳工艺下制备的Ag

  19. Optical fiber hydrogen sensor based on light reflection and a palladium-sliver thin film

    Institute of Scientific and Technical Information of China (English)

    CUI Lu-jun; SHANG Hui-chao; ZHANG Gang; ZHAO Ze-xiang; ZHOU Jun

    2011-01-01

    Thin alloy films of palladium (Pd) and silver (Ag) are deposited onto glass substrates via the direct current (DC) magnetron technique. The hydrogen sensor probe consists of optical fiber bundle and Pd/Ag optical thin film. When the sensor is exposed to hydrogen, the refractive index of Pd/Ag optical thin layer will diminish and cause attenuation changes of the reflective light. It is observed that the thickness of Pd/Ag alloy layer can affect the hydrogen sensor signal. Under different substrate temperatures, several Pd/Ag samples are coated with different thicknesses of Pd/Ag alloy, and the results of a hydrogen sensor based on reflective light from the Pd/Ag alloy thin film are discussed.

  20. Raman spectroscopy of chalcogenide thin films prepared by PLD

    Energy Technology Data Exchange (ETDEWEB)

    Erazu, M.; Rocca, J. [Laboratorio de Solidos Amorfos, INTECIN, Facultad de Ingenieria, Universidad de Buenos Aires - CONICET, Paseo Colon 850, 1063 Buenos Aires (Argentina); Fontana, M., E-mail: merazu@fi.uba.a [Laboratorio de Solidos Amorfos, INTECIN, Facultad de Ingenieria, Universidad de Buenos Aires - CONICET, Paseo Colon 850, 1063 Buenos Aires (Argentina); Urena, A.; Arcondo, B. [Laboratorio de Solidos Amorfos, INTECIN, Facultad de Ingenieria, Universidad de Buenos Aires - CONICET, Paseo Colon 850, 1063 Buenos Aires (Argentina); Pradel, A. [ICG, UMR 5253 CNRS UM 2 ENSCM UM1 equipe PMDP CC3, Universite Montpellier 2, 34095 Montpellier Cedex 5 (France)

    2010-04-16

    Chalcogenide glasses have many technological applications as a result of their particular optical and electrical properties. Ge-Se and Ag-Ge-Se systems were recently studied and tested as new materials for building non-volatile memories. Following these ideas, thin films of Ge-Se and Ag-Ge-Se were deposited using pulsed laser deposition (PLD). Ag was sputtered over binary films (for a composition between 0.05 and 0.25 Ag atomic fraction) and photo-diffused afterwards. Thus, three kinds of samples were analyzed by means of Raman spectroscopy, in order to provide information on the short- and medium-range order: PLD binary films before Ag doping, after Ag doping and PLD ternary films. Before Ag doping, binary films exhibited Ge-Se corner-sharing tetrahedra modes at 190 cm{sup -1}, low scattering from edge-sharing tetrahedra at 210 cm{sup -1}, and Se chains at 260 cm{sup -1} (stretching mode). However, after the diffusion process was complete, we observed an intensity reduction of bands centered at 210 cm{sup -1} and 260 cm{sup -1}. The spectra of the photo-diffused films were similar to those of films deposited using a ternary target. Relaxation effects in binary glasses were also analyzed. Results were compared with those of other authors.

  1. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  2. Thin Film Encapsulation of Light-Emitting Diodes with Photopolymerized Polyacrylate and Silver Films

    Institute of Scientific and Technical Information of China (English)

    WANG Li-Duo; WU Zhao-Xin; LI Yang; QIU Yong

    2005-01-01

    @@ A thin film encapsulation of organic light-emitting diodes (OLEDs) is investigated with a multi-layer stack of polyacrylate-Ag-polyacrylate-Ag-polyacrylate-Ag-polyacrylate (PAPAPAP). It is shown that the fabrication of polyacrylate films by a wet process does not affect the electroluminescent (EL) characteristics of the devices and polyacrylate films together with the silver layers can perform to minimize oxygen and water diffusion into the organic light-emitting device. The structure of polyacrylate(20 μm)-Ag(200nm)-polyacrylate(20 μm)-Ag(200nm)-polyacrylate(20μm)-Ag(200nm)-polyacrylate(20μm) is demonstrated to enhance dramatically the lifetime of OLEDs.

  3. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  4. Nanotemplated lead telluride thin films

    OpenAIRE

    Li, Xiaohong; Nandhakumar, Iris S.; Attard, George S.; Markham, Matthew L.; Smith, David C.; Baumberg, Jeremy J.

    2009-01-01

    Direct lyotropic liquid crystalline templating has been successfully applied to produce nanostructured IV–VI semiconductor PbTe thin films by electrodeposition both on gold and n-type (100) silicon substrates. The PbTe films were characterized by transmission electron microscopy, X-ray diffraction and polarized optical microscopy and the results show that the films have a regular hexagonal nanoarchitecture with a high crystalline rock salt structure and exhibit strong birefringenc...

  5. Thin films and froth flotation

    International Nuclear Information System (INIS)

    The properties of thin, aqueous films on solid surfaces and their central role in the froth flotation process are discussed. The stability of these films can generally be described in terms of electrostatic and van der Waals forces. Significant experimental and theoretical advances are required in many areas (e.g. short range forces, film drainage) before a clear picture of the collision of, adhesion between and detachment of bubbles and particles will emerge. (orig.)

  6. Thin-film ternary superconductors

    International Nuclear Information System (INIS)

    Physical properties and preparation methods of thin film ternary superconductors, (mainly molybdenum chalcogenides) are reviewed. Properties discussed include the superconducting critical fields and critical currents, resistivity and the Hall effect. Experimental results at low temperatures, together with electron microscopy data are used to determine magnetic flux pinning mechanisms in films. Flux pinning results, together with an empirical model for pinning, are used to get estimates for possible applications of thin film ternary superconductors where high current densities are needed in the presence of high magnetic fields. The normal state experimental data is used to derive several Fermi surface parameters, e.g. the Fermi velocity and the effective Fermi surface area. (orig.)

  7. Magnetocaloric effect and temperature coefficient of resistance of La0.85Ag0.15MnO3 epitaxial thin films obtained by polymer-assisted deposition

    Directory of Open Access Journals (Sweden)

    Cobas Acosta R.

    2014-07-01

    Full Text Available We report the magnetocaloric effects and temperature coefficient of resistance (TCR of La0.85Ag0.15MnO3 epitaxial thin films grown on single-crystal substrates of LaAlO3 (001 and SrTiO3 (001 using the chemical solution approach of polymer-assisted deposition (PAD. The film thicknesses are in the range 30-35 nm. Magnetocaloric effects, with entropy changes of -2.14 J/kg.K, in the case of the LaAlO3 substrate and -2.72 J/kg.K for the SrTiO3 substrate, (corresponding to a magnetic field variation of 2T were obtained at room temperature. The refrigeration capacity at this field variation reached large values of 125 J/kg and 216 J/kg, indicating that these films prepared by PAD have the potential for microcooling applications. The temperature coefficient of resistance has been calculated from the resistivity measurements. A maximum TCR value of 3.01 % K-1 was obtained at 309 K, which shows that these films also have potential as uncooled thermometers for bolometric applications.

  8. Microstructure and tribological properties of NbN-Ag composite films by reactive magnetron sputtering

    Science.gov (United States)

    Ju, Hongbo; Xu, Junhua

    2015-11-01

    Recently, the chameleon thin films were developed with the purpose of adjusting their chemistry at self-mating interfaces in response to environmental changes at a wide temperature range. However, very few studies have focused on what state the lubricious noble metal exists in the films and the tribological properties at room temperature (RT). Composite NbN-Ag films with various Ag content (Ag/(Nb + Ag)) were deposited using reactive magnetron sputtering to investigate the crystal structure, mechanical and tribological properties. A combination of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) analyses showed that face-centered cubic (fcc) NbN, hexagonal close-packed (hcp) NbN and fcc silver coexisted in NbN-Ag films. The incorporation of soft Ag into NbN matrix led to the hardness decrease from 29.6 GPa at 0 at.% Ag to 11.3 GPa at 19.9 at.% Ag. Tribological properties of NbN-Ag films performed using dry pin-on-disc wear tests against Al2O3 depended on Ag content to a large extent. The average friction coefficient and wear rate of NbN-Ag films decreased as Ag content increased from 4.0 to 9.2 at.%. With a further increase of Ag content, the average friction coefficient further decreased, while the wear rate increased gradually. The optimal Ag content was found to be 9.2-13.5 at.%, which showed low average friction coefficient values of 0.46-0.40 and wear rate values of 1.1 × 10-8 to 1.7 × 10-8 mm3/(mm N). 3D Profiler and Raman spectroscopy measurements revealed that the lubricant tribo-film AgNbO3 detected on the surface of the wear tracks could lead to the friction coefficient curve stay constant and decrease the average friction coefficients. The decrease of wear rate was mainly attributed to the lubricant tribo-film AgNbO3 as Ag content increased from 4.0 to 9.2 at.%; with a further increase in Ag content, the wear rate increased with increasing Ag content in NbN-Ag films because a

  9. Birefringent non-polarizing thin film design

    Institute of Scientific and Technical Information of China (English)

    QI; Hongji; HONG; Ruijin; HE; Hongbo; SHAO; Jianda; FAN; Zh

    2005-01-01

    In this paper, 2×2 characteristic matrices of uniaxially anisotropic thin film for extraordinary and ordinary wave are deduced at oblique incidence. Furthermore, the reflectance and transmittance of thin films are calculated separately for two polarizations, which provide a new concept for designing non-polarizing thin films at oblique incidence. Besides, using the multilayer birefringent thin films, non-polarizing designs, such as beam splitter thin film at single wavelength, edge filter and antireflection thin film over visible spectral region are obtained at oblique incidence.

  10. Thin-film forces in pseudoemulsion films

    Energy Technology Data Exchange (ETDEWEB)

    Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  11. Surface plasmon resonance in nanostructured Ag incorporated ZnS films

    Energy Technology Data Exchange (ETDEWEB)

    Chalana, S. R.; Mahadevan Pillai, V. P., E-mail: vpmpillai9@gmail.com [Department of Optoelectronics, University of Kerala, Kariavattom, Thiruvananthapuram– 695581, Kerala (India); Ganesan, V. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore- 452017, Madhyapradesh (India)

    2015-10-15

    Silver incorporated zinc sulfide thin films are prepared by RF magnetron sputtering technique and the influence of silver incorporation on the structural, optical and luminescence properties is analyzed using techniques like grazing incidence X-Ray diffraction (GIXRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), micro-Raman spectroscopy, UV-Vis spectroscopy and laser photoluminescence spectroscopy. XRD analysis presents hexagonal wurtzite structure for the films. A reduction of crystallinity of the films is observed due to Ag incorporation. The Raman spectral analysis confirms the reduction of crystallinity and increase of strain due to the Ag incorporation. AFM analysis reveals a rough surface morphology for the undoped film and Ag incorporation makes the films uniform, dense and smooth. A blue shift of band gap energy with increase in Ag incorporation is observed due to quantum confinement effect. An absorption band (450-650 nm region) due to surface plasmon resonance of the Ag clusters present in the ZnS matrix is observed for the samples with higher Ag incorporation. The complex dielectric constant, loss factor and distribution of volume and surface energy loss of the ZnS thin films are calculated. Laser photoluminescence measurements gives an intense bluish green emission from the ZnS films and a quenching of the PL emission is observed which can be due to the metal plasmonic absorption and non-radiative energy transfer due to Ag incorporation.

  12. Surface plasmon resonance in nanostructured Ag incorporated ZnS films

    Directory of Open Access Journals (Sweden)

    S. R. Chalana

    2015-10-01

    Full Text Available Silver incorporated zinc sulfide thin films are prepared by RF magnetron sputtering technique and the influence of silver incorporation on the structural, optical and luminescence properties is analyzed using techniques like grazing incidence X-Ray diffraction (GIXRD, atomic force microscopy (AFM, field emission scanning electron microscopy (FESEM, energy dispersive X-ray spectroscopy (EDS, micro-Raman spectroscopy, UV-Vis spectroscopy and laser photoluminescence spectroscopy. XRD analysis presents hexagonal wurtzite structure for the films. A reduction of crystallinity of the films is observed due to Ag incorporation. The Raman spectral analysis confirms the reduction of crystallinity and increase of strain due to the Ag incorporation. AFM analysis reveals a rough surface morphology for the undoped film and Ag incorporation makes the films uniform, dense and smooth. A blue shift of band gap energy with increase in Ag incorporation is observed due to quantum confinement effect. An absorption band (450-650 nm region due to surface plasmon resonance of the Ag clusters present in the ZnS matrix is observed for the samples with higher Ag incorporation. The complex dielectric constant, loss factor and distribution of volume and surface energy loss of the ZnS thin films are calculated. Laser photoluminescence measurements gives an intense bluish green emission from the ZnS films and a quenching of the PL emission is observed which can be due to the metal plasmonic absorption and non-radiative energy transfer due to Ag incorporation.

  13. Surface plasmon resonance in nanostructured Ag incorporated ZnS films

    International Nuclear Information System (INIS)

    Silver incorporated zinc sulfide thin films are prepared by RF magnetron sputtering technique and the influence of silver incorporation on the structural, optical and luminescence properties is analyzed using techniques like grazing incidence X-Ray diffraction (GIXRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), micro-Raman spectroscopy, UV-Vis spectroscopy and laser photoluminescence spectroscopy. XRD analysis presents hexagonal wurtzite structure for the films. A reduction of crystallinity of the films is observed due to Ag incorporation. The Raman spectral analysis confirms the reduction of crystallinity and increase of strain due to the Ag incorporation. AFM analysis reveals a rough surface morphology for the undoped film and Ag incorporation makes the films uniform, dense and smooth. A blue shift of band gap energy with increase in Ag incorporation is observed due to quantum confinement effect. An absorption band (450-650 nm region) due to surface plasmon resonance of the Ag clusters present in the ZnS matrix is observed for the samples with higher Ag incorporation. The complex dielectric constant, loss factor and distribution of volume and surface energy loss of the ZnS thin films are calculated. Laser photoluminescence measurements gives an intense bluish green emission from the ZnS films and a quenching of the PL emission is observed which can be due to the metal plasmonic absorption and non-radiative energy transfer due to Ag incorporation

  14. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  15. Thin films under chemical stress

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  16. Growth and Electronic Properties of Ag Nanoparticles on Reduced CeO2-x(111) Films

    Institute of Scientific and Technical Information of China (English)

    Dan-dan Kong; Yong-he Pan; Guo-dong Wang; Hai-bin Pan; Jun-fa Zhu

    2012-01-01

    Ag nanoparticles grown on reduced CeO2-x thin films have been studied by X-ray photoelectron spectroscopy and resonant photoelectron spectroscopy of the valence band to understand the effect of oxygen vacancies in the CeO2-x thin films on the growth and interfacial electronic properties of Ag.Ag grows as three-dimensional particles on the CeO2-x(111) surface at 300 K.Compared to the fully oxidized ceria substrate surface,Ag favors the growth of smaller particles with a larger particle density on the reduced ceria substrate surface,which can be attributed to the nucleation of Ag on oxygen vacancies.The binding energy of Ag3d increases when the Ag particle size decreases,which is mainly attributed to the final-state screening.The interfacial interaction between Ag and CeO2-x(111) is weak.The resonant enhancement of the 4f level of Ce3+ species in RPES indicates a partial Ce4+→Ce3+ reduction after Ag deposited on reduced ceria surface.The sintering temperature of Ag on CeO 1.85 (111) surface during annealing is a little higher than that of Ag on CeO2 (111) surface,indicating that Ag nanoparticles are more stable on the reduced ceria surface.

  17. Semiconductor-nanocrystal/conjugated polymer thin films

    Science.gov (United States)

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  18. Quantum-well-driven magnetism in thin films

    DEFF Research Database (Denmark)

    Mirbt, S.; Johansson, B.; Skriver, Hans Lomholt

    1996-01-01

    We have performed local spin-density calculations for an fee (100) Ag substrate covered by 1 to 16 monolayers (ML) of Pd. We find that thin films of Pd are magnetic with a moment of the order of 0.3 mu(B) except for films of 1-2 ML and 5-7 ML where magnetism is completely suppressed. We present a...

  19. Preparation of thin vyns films

    International Nuclear Information System (INIS)

    The fabrication of thin films of VYNS resin (copolymer of chloride and vinyl acetate) of superficial density from 3 to 50 μg/cm2 with solutions in cyclohexanone is presented. Study and discussion of some properties compared with formvar film (polyvinyl formals). It appears that both can be used as source supports but formvar films are prepared more easily and more quickly, in addition they withstand higher temperatures. The main quality of VYNS is that they can be easily separated even several days after their preparation

  20. Shielding superconductors with thin films

    CERN Document Server

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  1. Thin Film Solid Lubricant Development

    Science.gov (United States)

    Benoy, Patricia A.

    1997-01-01

    Tribological coatings for high temperature sliding applications are addressed. A sputter-deposited bilayer coating of gold and chromium is investigated as a potential solid lubricant for protection of alumina substrates during sliding at high temperature. Evaluation of the tribological properties of alumina pins sliding against thin sputtered gold films on alumina substrates is presented.

  2. Thin film polymeric gel electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Derzon, Dora K. (1554 Rosalba St. NE., Albuquerque, Bernalillo County, NM 87112); Arnold, Jr., Charles (3436 Tahoe, NE., Albuquerque, Bernalillo County, NM 87111); Delnick, Frank M. (9700 Fleming Rd., Dexter, MI 48130)

    1996-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  3. Phase Coarsening in Thin Films

    Science.gov (United States)

    Wang, K. G.; Glicksman, M. E.

    2015-08-01

    Phase coarsening (Ostwald ripening) phenomena are ubiquitous in materials growth processes such as thin film formation. The classical theory explaining late-stage phase coarsening phenomena was developed by Lifshitz and Slyozov, and by Wagner in the 1960s. Their theory is valid only for a vanishing volume fraction of the second phase in three dimensions. However, phase coarsening in two-dimensional systems is qualitatively different from that in three dimensions. In this paper, the many-body concept of screening length is reviewed, from which we derive the growth law for a `screened' phase island, and develop diffusion screening theory for phase coarsening in thin films. The coarsening rate constant, maximum size of phase islands in films, and their size distribution function will be derived from diffusion screening theory. A critical comparison will be provided of prior coarsening concepts and improvements derived from screening approaches.

  4. Superfast Thinning of a Nanoscale Thin Liquid Film

    OpenAIRE

    Winkler, Michael; Kofod, Guggi; Krastev, Rumen; Abel, Markus

    2011-01-01

    This fluid dynamics video demonstrates an experiment on superfast thinning of a freestanding thin aqueous film. The production of such films is of fundamental interest for interfacial sciences and the applications in nanoscience. The stable phase of the film is of the order $5-50\\,nm$; nevertheless thermal convection can be established which changes qualitatively the thinning behavior from linear to exponentially fast. The film is thermally driven on one spot by a very cold needle, establishi...

  5. Thin films stress modeling : a novel approach

    OpenAIRE

    Bhattacharyya, A. S.; Ramgiri, Praveen Kumar

    2015-01-01

    A novel approach to estimate the thin film stress was discussed based on surface tension. The effect of temperature and film thickness was studies. The effect of stress on the film mechanical properties was observed.

  6. PLD-grown thin film saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Tellkamp, Friedjof

    2012-11-01

    The subject of this thesis is the preparation and characterization of thin films made of oxidic dielectrics which may find their application as saturable absorber in passively Q-switched lasers. The solely process applied for fabrication of the thin films was the pulsed laser deposition (PLD) which stands out against other processes by its flexibility considering the composition of the systems to be investigated. Within the scope of this thesis the applied saturable absorbers can be divided into two fundamentally different kinds of functional principles: On the one hand, saturable absorption can be achieved by ions embedded in a host medium. Most commonly applied bulk crystals are certain garnets like YAG (Y{sub 3}Al{sub 5}O{sub 12}) or the spinel forsterite (Mg{sub 2}SiO{sub 4}), in each case with chromium as dopant. Either of these media was investigated in terms of their behavior as PLD-grown saturable absorber. Moreover, experiments with Mg{sub 2}GeO{sub 4}, Ca{sub 2}GeO{sub 4}, Sc{sub 2}O{sub 3}, and further garnets like YSAG or GSGG took place. The absorption coefficients of the grown films of Cr{sup 4+}:YAG were determined by spectroscopic investigations to be one to two orders of magnitude higher compared to commercially available saturable absorbers. For the first time, passive Q-switching of a Nd:YAG laser at 1064 nm with Cr{sup 4+}:YAG thin films could be realized as well as with Cr:Sc{sub 2}O{sub 3} thin films. On the other hand, the desirable effect of saturable absorption can also be generated by quantum well structures. For this purpose, several layer system like YAG/LuAG, Cu{sub 2}O/MgO, and ZnO/corumdum were investigated. It turned out that layer systems with indium oxide (In{sub 2}O{sub 3}) did not only grew in an excellent way but also showed up a behavior regarding their photo luminescence which cannot be explained by classical considerations. The observed luminescence at roughly 3 eV (410 nm) was assumed to be of excitonic nature and its

  7. Plasma polymerized hydrogel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tamirisa, Prabhakar A. [School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Koskinen, Jere [Institute of Paper Science and Technology, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Hess, Dennis W. [School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)]. E-mail: dennis.hess@chbe.gatech.edu

    2006-12-05

    Plasma polymerization was used to produce thermoresponsive hydrogel films of N-isopropylacrylamide (NIPAAm) in a single deposition step. Solvent free processing to produce laterally confined intelligent hydrogel films offers the potential for high volume production of micro-sensors/actuators. Through variation of reactor conditions such as deposition pressure and substrate temperature, it is possible to tailor and control chemical properties of the films such as crosslink density and thus swelling. Fabrication of hydrogel thin films with adequate crosslinks is critical to ensuring adhesion to substrates and stability in aqueous environments. Chemical bonding structures in plasma polymerized NIPAAm were studied using Fourier transform infrared spectroscopy and the thermoresponsive nature of plasma polymerized NIPAAm was confirmed through contact angle goniometry. A reversible temperature dependent contact angle change was observed.

  8. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States)

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  9. Microstructure and optical properties of nano Ag-ITO films

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Nano Ag-ITO films with Ag volume fraction of 0.3%-1.0% were prepared by radio-frequency magnetron co-sputtering and analyzed by X-ray diffraction,scanning electron microscopy and ultraviolet-visible spectroscopy.Microstructure analysis shows that the films are composed of polycrystalline ITO matrix embedded with Ag nanoparticles with a mean size of 60-100 nm.Transmissivity spectra of Ag-ITO films indicate that the visible light transmissivity of the films decreases with increasing the Ag fraction.The transmissivity of the annealed films is higher than that of the as-deposited films.The volume 0.3% Ag-ITO films have the highest light reflectance.The annealed films exhibit lower light absorptance than as-deposited films.A surface plasmon resonance(SPR) peak of volume 0.3% Ag-ITO films is located around 510 nm.Compared with the annealed ITO film,the annealed volume 0.3% Ag-ITO film shows 10% higher reflectivity,while its transmittance is almost the same as that of the annealed ITO film,indicating its potential application in new-type transflective displays.

  10. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  11. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  12. Organic thin-film photovoltaics

    OpenAIRE

    Liu, Miaoyin

    2010-01-01

    Zusammenfassung Zur Verbesserung der Leistungsumwandlung in organischen Solarzellen sind neue Materialien von zentraler Bedeutung, die sämtliche Erfordernisse für organische Photovoltaik-Elemente erfüllen. In der vorliegenden Arbeit „Organic thin-film photovoltaics“ wurden im Hinblick auf ein besseres Verständnis der Zusammenhänge zwischen molekularer Struktur und der Leistungsfähigkeit neue Materialien in „bulk-heterojunction“ Solarzellen und in Festphasen-Farbstoffsensibilisierten ...

  13. Optical properties and structures of silver thin films deposited by magnetron sputtering with different thicknesses

    Institute of Scientific and Technical Information of China (English)

    Xilian Sun; Ruijin Hong; Haihong Hou; Zhengxiu Fan; Jianda Shao

    2006-01-01

    A series of thin Ag films with different thicknesses grown under identical conditions are analyzed by means of spectrophotometer. From these measurements the values of refractive index and extinction coefficient are calculated. The films are deposited onto BK7 glass substrates by direct current (DC) magnetron sputtering. It is found that the optical properties of the Ag films can be affected by films thickness.Below critical thickness of 17 nm, which is the thickness at which Ag films form continuous films, the optical properties and constants vary significantly with thickness increasing and then tend to a stable value up to about 40 nm. At the same time, X-ray diffraction measurement is carried out to examine the microstructure evolution of Ag films as a function of films thickness. The relation between optical properties and microstructure is discussed.

  14. Photoconductivity of thin organic films

    International Nuclear Information System (INIS)

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C60), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 103 Ω m and 3 x 104 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 108 Ω m in dark to 3.1 x 106 Ω m under the light.

  15. Optical properties of rubrene thin film prepared by thermal evaporation

    Science.gov (United States)

    Chen, Liang; Deng, Jin-Xiang; Kong, Le; Cui, Min; Chen, Ren-Gang; Zhang, Zi-Jia

    2015-04-01

    Rubrene thin films are deposited on quartz substrates and silver nanoparticles (Ag NPs) films by the thermal evaporation technique. The optical properties of rubrene thin film are investigated in a spectral range of 190 nm-1600 nm. The analysis of the absorption coefficient (α) reveals direct allowed transition with a corresponding energy of 2.24 eV. The photoluminescence (PL) peak of the rubrene thin film is observed to be at 563 nm (2.21 eV). With the use of Ag NPs which are fabricated by radio-frequency (RF) magnetron sputtering on the quartz, the PL intensity is 8.5 times that of as-deposited rubrene thin film. It is attributed to the fact that the surface plasmon enhances the photoluminescence. Project supported by the Funding for the Development Project of Beijing Municipal Education Commission of Science and Technology, China (Grant No. KZ201410005008), the Natural Science Foundation of Beijing City, China (Grant No. 4102014), and the Graduate Science Fund of the Beijing University of Technology, China (Grant No. ykj-2013-9835).

  16. Evaluation of the Antimicrobial Activity of Different Antibiotics Enhanced with Silver-Doped Hydroxyapatite Thin Films

    Directory of Open Access Journals (Sweden)

    Daniela Predoi

    2016-09-01

    Full Text Available The inhibitory and antimicrobial effects of silver particles have been known since ancient times. In the last few years, a major health problem has arisen due to pathogenic bacteria resistance to antimicrobial agents. The antibacterial activities of new materials including hydroxyapatite (HAp, silver-doped hydroxyapatite (Ag:HAp and various types of antibiotics such as tetracycline (T-HAp and T-Ag:HAp or ciprofloxacin (C-HAp and C-Ag:HAp have not been studied so far. In this study we reported, for the first time, the preparation and characterization of various thin films based on hydroxyapatite and silver-doped hydroxyapatite combined with tetracycline or ciprofloxacin. The structural and chemical characterization of hydroxyapatite and silver-doped hydroxyapatite thin films has been evaluated by X-ray diffraction (XRD and Fourier transform infrared spectroscopy (FTIR. The morphological studies of the HAp, Ag:HAp, T-HAp, T-Ag:HAp, C-HAp and C-Ag:HAp thin solid films were performed using scanning electron microscopy (SEM. In order to study the chemical composition of the coatings, energy dispersive X-ray analysis (EDX and glow discharge optical emission spectroscopy (GDOES measurements have been used, obtaining information on the distribution of the elements throughout the film. These studies have confirmed the purity of the prepared hydroxyapatite and silver-doped hydroxyapatite thin films obtained from composite targets containing Ca10−xAgx(PO46(OH2 with xAg = 0 (HAp and xAg = 0.2 (Ag:HAp. On the other hand, the major aim of this study was the evaluation of the antibacterial activities of ciprofloxacin and tetracycline in the presence of HAp and Ag:HAp thin layers against Staphylococcus aureus and Escherichia coli strains. The antibacterial activities of ciprofloxacin and tetracycline against Staphylococcus aureus and Escherichia coli test strains increased in the presence of HAp and Ag:HAp thin layers.

  17. Flexible Tactile Sensor Using Polyurethane Thin Film

    OpenAIRE

    Seiji Aoyagi; Tomokazu Takahashi; Masato Suzuki

    2012-01-01

    A novel capacitive tactile sensor using a polyurethane thin film is proposed in this paper. In previous studies, capacitive tactile sensors generally had an air gap between two electrodes in order to enhance the sensitivity. In this study, there is only polyurethane thin film and no air gap between the electrodes. The sensitivity of this sensor is higher than the previous capacitive tactile sensors because the polyurethane is a fairly flexible elastomer and the film is very thin (about 1 µm)....

  18. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  19. Minerals deposited as thin films

    International Nuclear Information System (INIS)

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author)

  20. Interactions in thin aqueous films

    OpenAIRE

    Hänni-Ciunel, Katarzyna

    2006-01-01

    In der Arbeit werden die Wechselwirkungen in dünnen flüssigen Filmen untersucht und modifiziert. Schaum- (gas/flüssig/gas) und Benetzungsfilme (gas/flüssig/fest) werden mittels Thin Film Pressure Balance (TFPB) untersucht. Die Apparatur wurde im Rahmen der Arbeit für die Studien an asymmetrischen Filmen aufgebaut und modifiziert. Die Ladungen an den Filmgrenzflächen werden gezielt modifiziert. Die Adsoprtion von Tensiden bestimmt die Oberflächenladung an der gas/flüssig Grenzfläche. Die Oberf...

  1. The role of thin films in wetting

    OpenAIRE

    Marmur, Abraham

    1988-01-01

    The role of thin films in wetting is reviewed. Three modes of spontaneous spreading are discussed : incomplete spreading, complete spreading and mixed-mode spreading. A thin film can be either molecular or colloidal in thickness. Molecularly adsorbed films are mainly associated with incomplete spreading. Colloidal films usually extend from the bulk of the liquid in dynamic situations of complete spreading. Their existence at equilibriuim with the bulk depends on the orientation in the gravita...

  2. Microstructural evolution of tungsten oxide thin films

    International Nuclear Information System (INIS)

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 deg. were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a 'instability wheel' model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  3. Epitaxial Cu(001) films grown on a Cr/Ag/Fe/GaAs(001) buffer system

    International Nuclear Information System (INIS)

    We present a procedure to prepare single-crystalline, high-purity Cu(001) films (templates) suitable as substrates for subsequent epitaxial thin-film growth. The template films were grown in a dedicated molecular-beam epitaxy system on a Cr/Ag/Fe/GaAs(001) buffer layer system. Low-energy electron diffraction and X-ray diffraction were applied to determine the surface orientation and the epitaxial relationship between all layers of the stack. Post-annealing at moderate temperatures enhances the quality of the film as shown by low-energy electron diffraction and atomic force microscopy. X-ray photoemission and Auger electron spectroscopy confirm that no atoms of the buffer layers diffuse into the Cu film during the initial preparation and the post-annealing treatment. The completed Cu(001) template system can be exposed to air and afterwards refurbished by Ar+-ion bombardment and annealing, enabling the transfer between vacuum systems. The procedure provides suitable conductive thin film templates for studies of epitaxial thin films, e.g. on the magnetic and magnetotransport properties of Co and Ni based films and multilayers. - Highlights: • Preparation of epitaxial Cu(001) template films on an insulating substrate • Characterization of template structure, orientation, cleanness, and roughness • Template films can be exposed to air and refurbished in different vacuum system. • Template films are suitable for further thin film growth at up to 570 K

  4. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  5. Ellipsometric Studies on Silver Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    M. Pandiaraman

    2011-01-01

    Full Text Available Silver telluride thin films of thickness between 45 nm and 145 nm were thermally evaporated on well cleaned glass substrates at high vacuum better than 10 – 5 mbar. Silver telluride thin films are polycrystalline with monoclinic structure was confirmed by X-ray diffractogram studies. AFM and SEM images of these films are also recorded. The phase ratio and amplitude ratio of these films were recorded in the wavelength range between 300 nm and 700 nm using spectroscopic ellipsometry and analysed to determine its optical band gap, refractive index, extinction coefficient, and dielectric functions. High absorption coefficient determined from the analysis of recorded spectra indicates the presence of direct band transition. The optical band gap of silver telluride thin films is thickness dependent and proportional to square of reciprocal of thickness. The dependence of optical band gap of silver telluride thin films on film thickness has been explained through quantum size effect.

  6. Modification of polyamide-CdS-CdSe composite material films with Ag using a cation–cation exchange reaction

    Energy Technology Data Exchange (ETDEWEB)

    Krylova, V.; Žalenkienė, S.; Dukstienė, N. [Department of Physical and Inorganic Chemistry, Kaunas University of Technology, Radvilenu st. 19, LT-50254, Kaunas (Lithuania); Baltrusaitis, J., E-mail: job314@lehigh.edu [Department of Chemical and Biomolecular Engineering, Lehigh University, B336 Iacocca Hall, 111 Research Drive, Bethlehem, PA 18015 (United States)

    2015-10-01

    Highlights: • We investigated deposition of a mixed CdSe-CdS-Ag{sub 2}Se-Ag{sub 2}S on polyamide. • A single chalcogen precursor – K{sub 2}SeS{sub 2}O{sub 6} – was used. • AAS showed five- to ten-fold excess of chalcogens diffused into PA. • Addition of AgNO{sub 3} resulted in subsurface Ag{sub 2}Se–Ag{sub 2}S formation. - Abstract: Thin mixed CdSe-CdS-Ag{sub 2}Se-Ag{sub 2}S films were deposited on a polyamide 6 (PA) surface by successfully using a cation-exchange reaction between Cd{sup 2+} and Ag{sup +} to convert CdSe-CdS into Ag{sub 2}Se-Ag{sub 2}S. These were deposited using a K{sub 2}SeS{sub 2}O{sub 6} precursor solution at 60 °C followed by cadmium acetate (Cd(CH{sub 3}COO){sub 2}). An aqueous AgNO{sub 3} solution was used as the Ag source. XRD patterns showed a complex PA-Cd-S-Se-Ag film crystalline composition with CdS, CdSe, Ag{sub 2}S and Ag{sub 2}Se peaks. Calculated dislocation density ranged within 5–15 × 10{sup 13} lines·m{sup −2} indicating high quality atomic layers. Atomic Absorption Spectroscopy (AAS) showed five- to ten-fold excess of chalcogens to metals in the thin films formed. No chalcogenides were observed on the sample surface during XPS analysis after Ag exchange due to the desorption of CdS and CdSe layers, not diffused into the bulk of the polymer suggesting that silver chalcogenides were located subsurface, as opposed to the outermost layer, likely comprised of Ag{sub 2}O.

  7. Electrostatic thin film chemical and biological sensor

    Science.gov (United States)

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  8. Particle growth mechanisms in Ag-ZrO2 and Au-ZrO2 granular films obtained by pulsed laser deposition

    International Nuclear Information System (INIS)

    Thin films consisting of Ag and Au nanoparticles embedded in amorphous ZrO2 matrix were grown by pulsed laser deposition in a wide range of metal volume concentrations in the dielectric regime (0.08AgAuc(Ag)∼0.28 and xc(Au)∼0.52)

  9. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  10. Thermoelectric Properties of Hybrid Thin Films of PEDOT-PSS and Silver Nanowires

    Science.gov (United States)

    Yoshida, Akihito; Toshima, Naoki

    2016-06-01

    We report the thermoelectric (TE) properties of organic-inorganic hybrid thin films composed of conductive polymer, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS), and inorganic silver nanowire (AgNW). Two kinds of AgNW with different wire length, 3 μm and 27 μm, were used in this study. The AgNW/PEDOT-PSS hybrid films showed an increase in electrical conductivity ( σ) with increase in AgNW concentration. The maximum value of σ obtained in this system was ca. 10,000 S cm-1. The films containing long AgNWs (L-AgNWs) showed higher σ relative to short AgNWs (S-AgNWs) at given concentration, which results from the fact that longer nanowires can easily form a percolated structure. The formation of a percolated structure was confirmed by scanning electron microscopy (SEM) observation. On the other hand, the Seebeck coefficient ( S) of the hybrid films showed the opposite dependence on AgNW concentration. This decrease in S with increasing AgNW concentration is probably because of increase in carrier number due to the AgNWs. These results suggest that the presented organic-inorganic hybrid system is one example where the electrical conductivity and TE properties can be tuned by use of a nanocomposite.

  11. PREPARATION AND CHARACTERIZATION OF POLY-CRYSTALLINE SILICON THIN FILM

    Institute of Scientific and Technical Information of China (English)

    Y.F. Hu; H. Shen; Z.Y. Liu; L.S. Wen

    2003-01-01

    Poly-crystalline silicon thin film has big potential of reducing the cost of solar cells.In this paper the preparation of thin film is introduced, and then the morphology of poly-crystalline thin film is discussed. On the film we developed poly-crystalline silicon thin film solar cells with efficiency up to 6. 05% without anti-reflection coating.

  12. Stress evolution in copper-silver thin films during thermal-cycling

    Energy Technology Data Exchange (ETDEWEB)

    Chama, C.C., E-mail: ccchama1@yahoo.com [Department of Metallurgy and Mineral Processing, University of Zambia, P.O. Box 32379, Lusaka (Zambia); Vlassak, J.J. [School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138 (United States); Soboyejo, W.O. [Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ 08544 (United States)

    2012-01-15

    Highlights: Black-Right-Pointing-Pointer Stress in Cu and Cu-Ag films determined from -197 to 0 Degree-Sign C and RT to 400 Degree-Sign C. Black-Right-Pointing-Pointer Heating to 400 Degree-Sign C, films elastically and plastically deformed. Black-Right-Pointing-Pointer Cooling, Cu plastically deformed; Cu-Ag films plastic/elastic deformation. Black-Right-Pointing-Pointer At -197 to 0 Degree-Sign C, yielding did not occur in any Cu-6 at% Ag film. Black-Right-Pointing-Pointer Cu and Ag existed; grain growth and Ag coarsening occurred. - Abstract: Stress evolution in Cu, Cu-1.4 at% Ag, Cu-3 at% Ag and Cu-6 at% Ag thin films was determined by substrate curvature measurements from room temperature to 400 Degree-Sign C in two cycles, each involving a heating and a cooling stage. Stress hysteresis curves for the Cu-Ag films changed slope significantly within the temperature range 220-250 Degree-Sign C and stress range 100-200 MPa during the heating stage of the first cycle; this occurred at 175 Degree-Sign C and 100 MPa for the Cu film. This was followed by stress relaxation in all the films at about 300 Degree-Sign C. For the as-deposited, annealed and thermally cycled films exposed to low temperatures (-197 to 0 Degree-Sign C), instances of yielding occurred in Cu, Cu-1.4 at% Ag and Cu-3 at% Ag films. However, the as-deposited, annealed and thermally cycled Cu-6 at% Ag film was always elastic and there was no yielding when exposed to low temperatures. Microstructural analyses revealed the presence of Cu and Ag phases in all the Cu-Ag films, irrespective of the thermal history. Despite electron diffraction revealing their existence, Ag particles were not so apparent in the microstructures of the as-deposited and annealed films probably because of their fine sizes. However, after thermal-cycling Ag particles were observed at grain boundaries and inside grains in addition to significant grain growth.

  13. Thermal Expansion Coefficients of Thin Crystal Films

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    The formulas for atomic displacements and Hamiltonian of a thin crystal film in phonon occupation number representation are obtained with the aid of Green's function theory. On the basis of these results, the formulas for thermal expansion coefficients of the thin crystal film are derived with the perturbation theory, and the numerical calculations are carried out. The results show that the thinner films have larger thermal expansion coefficients.

  14. Slip-controlled thin film dynamics

    OpenAIRE

    Fetzer, R.; Rauscher, M; Münch, A.; Wagner, B. A.; Jacobs, K.

    2006-01-01

    In this study, we present a novel method to assess the slip length and the viscosity of thin films of highly viscous Newtonian liquids. We quantitatively analyse dewetting fronts of low molecular weight polystyrene melts on Octadecyl- (OTS) and Dodecyltrichlorosilane (DTS) polymer brushes. Using a thin film (lubrication) model derived in the limit of large slip lengths, we can extract slip length and viscosity. We study polymer films with thicknesses between 50 nm and 230 nm and various tempe...

  15. Morphology and oxygen incorporation effect on antimicrobial activity of silver thin films

    Science.gov (United States)

    Rebelo, Rita; Manninen, N. K.; Fialho, Luísa; Henriques, Mariana; Carvalho, Sandra

    2016-05-01

    Ag and AgxO thin films were deposited by non-reactive and reactive pulsed DC magnetron sputtering, respectively, with the final propose of functionalizing the SS316L substrate with antibacterial properties. The coatings were characterized chemically, physically and structurally. The coatings nanostructure was assessed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), while the coatings morphology was determined by scanning electron microscopy (SEM). The XRD and XPS analyses suggested that Ag thin film is composed by metallic Ag, which crystallizes in fcc-Ag phase, while the AgxO thin film showed both metallic Ag and Agsbnd O bonds, which crystalize in fcc-Ag and silver oxide phases. The SEM results revealed that Ag thin film formed a continuous layer, while AgxO layer was composed of islands with hundreds of nanometers surrounded by small nanoparticles with tens of nanometers. The surface wettability and surface tension parameters were determined by contact angle measurements, being found that Ag and AgxO surfaces showed very similar behavior, with all the surfaces showing a hydrophobic character. In order to verify the antibacterial behavior of the coatings, halo inhibition zone tests were realized for Staphylococcus epidermidis and Staphylococcus aureus. Ag coatings did not show antibacterial behavior, contrarily to AgxO coating, which presented antibacterial properties against the studied bacteria. The presence of silver oxide phase along with the development of different morphology was pointed as the main factors in the origin of the antibacterial effect found in AgxO thin film. The present study demonstrated that AgxO coating presented antibacterial behavior and its application in cardiovascular stents is promising.

  16. BDS thin film damage competition

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  17. Thin-film optical shutter

    Science.gov (United States)

    Matlow, S. L.

    1981-02-01

    The ideal solution to the excessive solar gain problem is an optical shutter, a device which switches from being highly transmissive to solar radiation to being highly reflective to solar radiation when a critical temperature is reached in the enclosure. The switching occurs because one or more materials in the device undergo a phase transition at the critical temperature. A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, was chosen as the one most likely to meet all of the requirements of the thin film optical shutter project (TFOS). The reason for this choice is explored. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a quantum mechanical method, the equilibrium bond length (EBL) theory, was developed. Some results of EBL theory are included.

  18. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  19. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Rachana Gupta; Mukul Gupta; Thomas Gutberlet

    2008-11-01

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron sputtering technique at ambient temperature. The film prepared with only Ar gas shows reflections corresponding to the permalloy phase in X-ray diffraction (XRD) pattern. The addition of nitrogen during sputtering results in broadening of the peaks in XRD pattern, which finally leads to an amorphous phase. The - loop for the sample prepared with only Ar gas is matching well with the values obtained for the permalloy. For the samples prepared with increased nitrogen partial pressure the magnetic moment decreased rapidly and the values of coercivity increased. The polarized neutron reflectivity measurements (PNR) were performed in the sample prepared with only Ar gas and with nitrogen partial pressure of 5 and 10%. It was found that the spin-up and spin-down reflectivities show exactly similar reflectivity for the sample prepared with Ar gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity.

  20. Structural and spectroscopic studies of thin film of silver nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Khan, M.A. Majeed, E-mail: majeed_phys@rediffmail.com [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451 (Saudi Arabia); Kumar, Sushil [Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055 (India); Ahamed, Maqusood; Alrokayan, Salman A. [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451 (Saudi Arabia); Alsalhi, M.S. [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451 (Saudi Arabia); Department of Physics and Astronomy, King Saud University, Riyadh, 11451 (Saudi Arabia); Alhoshan, Mansour [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451 (Saudi Arabia); Chemical Engineering Department, King Saud University, Riyadh, 11451 (Saudi Arabia); Aldwayyan, A.S. [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451 (Saudi Arabia); Department of Physics and Astronomy, King Saud University, Riyadh, 11451 (Saudi Arabia)

    2011-10-01

    We report the deposition of thin film of silver (Ag) nanoparticles by wet chemical method. The as-synthesized Ag nanoparticles have been characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray energy dispersive spectroscopy (EDS), field emission transmission electron microscopy (FETEM) and high-resolution TEM (HRTEM), UV-vis spectroscopy and thermogravimetric-differential thermal analysis (TG-DTA) respectively. FESEM image indicates that the silver film prepared on the quartz substrate is smooth and dense. XRD pattern reveals the face-centered cubic (fcc) structure of silver nanoparticles. EDS spectrum indicates that samples are nearly stoichiometric. From TEM analysis, it is found that the size of high purity Ag nanoparticles is ranging from 10 to 20 nm with slight agglomeration. Absorption in UV-vis region by these nanoparticles is characterized by the features reported in the literature, namely, a possible Plasmon peak at {approx}403 nm. Optical absorbance spectra analysis reveals that the Ag film has an indirect band structure with bandgap energy 3.88 eV. TGA/DTA studies revealed that a considerable weight loss occurs between 175 and 275 deg. C; and the reaction is exothermic.

  1. Synthesis of Photochromic AgCl-Urethane Resin Composite Films

    Directory of Open Access Journals (Sweden)

    Hidetoshi Miyazaki

    2012-01-01

    Full Text Available AgCl-resin photochromic composite films were prepared using AgNO3, HCl-EtOH, CuCl2 solution, and a liquid-state urethane resin as starting materials. The obtained composite films showed a photochromic property. The rate of darkening of the composite film increased after mixing with CuCl2. The AgCl particle size in the film without heat treatment was 6–20 nm, and that of the heat-treated film was 25–80 nm; these results were confirmed using TEM observations. The fading rate of the film without heat treatment was higher than that of the heat-treated films.

  2. TiO2 thin film photocatalyst

    Institute of Scientific and Technical Information of China (English)

    YU Jiaguo

    2004-01-01

    It is well known that the photocatalytic activity of TiO2 thin films strongly depends on the preparing methods and post-treatment conditions, since they have a decisive influence on the chemical and physical properties of TiO2 thin films.Therefore, it is necessary to elucidate the influence of the preparation process and post-treatment conditions on the photocatalytic activity and surface microstructures of the films. This review deals with the preparation of TiO2 thin film photocatalysts by wet-chemical methods (such as sol-gel, reverse micellar and liquid phase deposition) and the comparison of various preparation methods as well as their advantage and disadvantage. Furthermore, it is discussed that the advancement of photocatalytic activity, super-hydrophilicity and bactericidal activity of TiO2 thin film photocatalyst in recent years.

  3. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    International Nuclear Information System (INIS)

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt3) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO2, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10−6 Ω cm was obtained for approximately 97 nm Ag film on SiO2/Si substrate. The thickness was determined from the SEM cross section on the SiO2/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO2 surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images

  4. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amusan, Akinwumi A., E-mail: akinwumi.amusan@ovgu.de; Kalkofen, Bodo; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Gargouri, Hassan; Wandel, Klaus; Pinnow, Cay [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

    2016-01-15

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt{sub 3}) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO{sub 2}, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10{sup −6} Ω cm was obtained for approximately 97 nm Ag film on SiO{sub 2}/Si substrate. The thickness was determined from the SEM cross section on the SiO{sub 2}/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO{sub 2} surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images.

  5. Alumina Thin Film Growth: Experiments and Modeling

    OpenAIRE

    Wallin, Erik

    2007-01-01

    The work presented in this thesis deals with experimental and theoretical studies related to the growth of crystalline alumina thin films. Alumina, Al2O3, is a polymorphic material utilized in a variety of applications, e.g., in the form of thin films. Many of the possibilities of alumina, and the problems associated with thin film synthesis of the material, are due to the existence of a range of different crystalline phases. Controlling the formation of the desired phase and the transformati...

  6. Electrochromism of amorphous ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Se-Hee; Liu, Ping; Tracy, C. Edwin; Deb, Satyen K. [National Renewable Energy Laboratory, Center for Basic Sciences, 1617 Cole Boulevard, Golden, CO 80401 (United States); Cheong, Hyeonsik M. [Sogang University, Shinsoo-Dong, Seoul 121-742 (Korea, Republic of)

    2003-12-01

    We report on the electrochromic behavior of amorphous ruthenium oxide thin films and their electrochemical characteristics for use as counterelectrodes for electrochromic devices. Hydrous ruthenium oxide thin films were prepared by cyclic voltammetry on ITO coated glass substrates from an aqueous ruthenium chloride solution. The cyclic voltammograms of this material show the capacitive behavior including two redox reaction peaks in each cathodic and anodic scan. The ruthenium oxide thin film electrode exhibits a 50% modulation of optical transmittance at 670 nm wavelength with capacitor charge/discharge.

  7. Insect thin films as solar collectors.

    Science.gov (United States)

    Heilman, B D; Miaoulis, L N

    1994-10-01

    A numerical method for simulation of microscale radiation effects in insect thin-film structures is described. Accounting for solar beam and diffuse radiation, the model calculates the reflectivity and emissivity of such structures. A case study examines microscale radiation effects in butterfuly wings, and results reveal a new function of these multilayer thin films: thermal regulation. For film thicknesses of the order of 0.10 µm, solar absorption levels vary by as much as 25% with small changes in film thickness; for certain existing structures, absorption levels reach 96%., This is attributed to the spectral distribution of the reflected radiation, which consists of a singular reflectance peak within the solar spectrum.

  8. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: mkhine@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  9. Thin films for geothermal sensing: Final report

    Energy Technology Data Exchange (ETDEWEB)

    1987-09-01

    The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

  10. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    Science.gov (United States)

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses coating planar, curved, and line-of-sight-obscured silicon nitride surfaces. PMID:24999923

  11. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  12. Superconducting thin-film gradiometer

    International Nuclear Information System (INIS)

    We describe the design, fabrication, and performance of planar thin-film dc SQUID's and planar gradiometers in which a dc SQUID is incorporated as a null detector. Each gradiometer was fabricated on a planar substrate and measured an off-diagonal component of changes in the magnetic field gradient. The gradiometer with the highest sensitivity had 127 x 33-mm loops that could be connected in parallel or in series: The sensitivities were 2.1 x 10-13 and 3.7 x 10-13 T m-1 Hz/sup -1/2/, respectively. The intrinsic balance of the gradiometers was about 100 ppm for fields parallel to their plane, and a balance of about 1 ppm could be achieved for fields perpendicular to their plane. When the series-loop gradiometer was rotated through 3600 in the earth's field, the output returned to its initial value to within an amount corresponding to a balance of 1 ppm. Possible improvements in sensitivity are discussed

  13. Thin solid-lubricant films in space

    Science.gov (United States)

    Roberts, E. W.

    Low-friction films of thickness as low as 1 micron, created through sputter-deposition of low shear strength materials, are required in spacecraft applications requiring low power dissipation, such as cryogenic devices, and low torque noise, such as precision-pointing mechanisms. Due to their thinness, these coatings can be applied to high precision-machined tribological components without compromising their functional accuracy. Attention is here given to the cases of thin solid films for ball bearings, gears, and journal bearings.

  14. Laser-annealing of thin semiconductor films

    OpenAIRE

    Boneberg, Johannes; Nedelcu, Johann; Bucher, Ernst; Leiderer, Paul

    1994-01-01

    Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin film, depending on the energy density of the amding laser.

  15. Advances in CZTS thin films and nanostructured

    Science.gov (United States)

    Ali, N.; Ahmed, R.; Bakhtiar-Ul-Haq; Shaari, A.

    2015-06-01

    Already published data for the optical band gap (Eg) of thin films and nanostructured copper zinc tin sulphide (CZTS) have been reviewed and combined. The vacuum (physical) and non-vacuum (chemical) processes are focused in the study for band gap comparison. The results are accumulated for thin films and nanostructured in different tables. It is inferred from the re- view that the nanostructured material has plenty of worth by engineering the band gap for capturing the maximum photons from solar spectrum.

  16. Characteristics and durability of fluoropolymer thin films

    OpenAIRE

    Cheneler, David; Bowen, James; Evans, Stephen D.; Górzny, Marcin; Adams, Michael J; Ward, Michael C.L.

    2011-01-01

    The use of plasma-polymerised fluoropolymer (CFxOy) thin films in the manufacture of microelectromechanical systems (MEMS) devices is well-established, being employed in the passivation step of the deep reactive ion etching (DRIE) process, for example. This paper presents an investigation of the effect of exposure to organic and aqueous liquid media on plasma polymerised CFxOy thin films. Atomic force microscopy (AFM), scanning electron microscopy (SEM), ellipsometry, X-ray photoelectron spec...

  17. Surface plasmon resonance optical sensor by using Ag-SnO2 thin film%表面等离子共振Ag-SnO2薄膜光化学气体传感器

    Institute of Scientific and Technical Information of China (English)

    符运良; 袁一方; 傅军; 李天略

    2007-01-01

    提出一种新型的Ag-SnO2复合膜H2S光化学表面等离子共振(SPR)气体传感器结构.结构中使用一只金红石材料作成的棱镜作为耦合棱镜,在棱镜的底边采用射频溅射技术制作Ag-SnO2复合膜(CuO为掺杂质),Ag膜和SnO2膜的厚度分别为50 nm和100 nm,在复合膜上设置待测气体的样品池.在白光入射激励下,复合膜的分界面发生SPR现象.实验结果表明:SPR的波长与H2S气体的体积分数基本呈线性关系.

  18. Microstructural evolution of tungsten oxide thin films

    Science.gov (United States)

    Hembram, K. P. S. S.; Thomas, Rajesh; Rao, G. Mohan

    2009-10-01

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 °C were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a "instability wheel" model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  19. Microstructural evolution of tungsten oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hembram, K.P.S.S., E-mail: hembram@isu.iisc.ernet.in [Department of Instrumentation, Indian Institute of Science, Bangalore - 560 012 (India); Theoretical Science Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore - 560064 (India); Thomas, Rajesh; Rao, G. Mohan [Department of Instrumentation, Indian Institute of Science, Bangalore - 560 012 (India)

    2009-10-30

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 deg. were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a 'instability wheel' model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  20. Carbon Nanotube Thin-Film Antennas.

    Science.gov (United States)

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  1. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  2. Bimodal swelling responses in microgel thin films.

    Science.gov (United States)

    Sorrell, Courtney D; Lyon, L Andrew

    2007-04-26

    A series of studies on microgel thin films is described, wherein quartz crystal microgravimetry (QCM), surface plasmon resonance (SPR), and atomic force microscopy (AFM) have been used to probe the properties of microstructured polymer thin films as a function of film architecture and solution pH. Thin films composed of pNIPAm-co-AAc microgels were constructed by using spin-coating layer-by-layer (scLbL) assembly with poly(allylamine hydrochloride) (PAH) as a polycationic "glue". Our findings suggest that the interaction between the negatively charged microgels and the positively charged PAH has a significant impact on the pH responsivity of the film. These effects are observable in both the optical and mechanical behaviors of the films. The most significant changes in behavior are observed when the motional resistance of a quartz oscillator is monitored via QCM experiments. Slight changes to the film architecture and alternating the pH of the environment significantly changes the QCM and SPR responses, suggesting a pH-dependent swelling that is dependent on both particle swelling and polyelectrolyte de-complexation. Together, these studies allow for a deeper understanding of the morphological changes that take place in environmentally responsive microgel-based thin films. PMID:17407344

  3. Indium sulfide thin films as window layer in chemically deposited solar cells

    International Nuclear Information System (INIS)

    Indium sulfide (In2S3) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO3)3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In2S3. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In2S3 thin films are photosensitive with an electrical conductivity value in the range of 10−3–10−7 (Ω cm)−1, depending on the film preparation conditions. We have demonstrated that the In2S3 thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO2:F/In2S3/Sb2S3/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm2. - Highlights: • In2S3 thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In2S3 films. • We made chemically deposited solar cells using the In2S3 thin films

  4. Autophagy induction by silver nanowires: A new aspect in the biocompatibility assessment of nanocomposite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Verma, Navin K. [Institute of Molecular Medicine, Trinity College Dublin (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices, Trinity College Dublin (Ireland); Conroy, Jennifer [Institute of Molecular Medicine, Trinity College Dublin (Ireland); Lyons, Philip E.; Coleman, Jonathan [Centre for Research on Adaptive Nanostructures and Nanodevices, Trinity College Dublin (Ireland); O' Sullivan, Mary P. [Institute of Molecular Medicine, Trinity College Dublin (Ireland); Kornfeld, Hardy [University of Massachusetts Medical School, Massachusetts (United States); Kelleher, Dermot [Institute of Molecular Medicine, Trinity College Dublin (Ireland); Volkov, Yuri, E-mail: yvolkov@tcd.ie [Institute of Molecular Medicine, Trinity College Dublin (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices, Trinity College Dublin (Ireland)

    2012-11-01

    Nanomaterials and their enabled products have increasingly been attracting global attention due to their unique physicochemical properties. Among these emerging products, silver nanowire (AgNW)-based thin films are being developed for their promising applications in next generation nanoelectronics and nanodevices. However, serious concerns remain about possible health and safety risks they may pose. Here, we employed a multi-modal systematic biocompatibility assessment of thin films incorporating AgNW. To represent the possible routes of nanomaterial entry during occupational or environmental exposure, we employed four different cell lines of epithelial, endothelial, gastric, and phagocytic origin. Utilizing a cell-based automated image acquisition and analysis procedure in combination with real-time impedance sensing, we observed a low level of cytotoxicity of AgNW, which was dependent on cell type, nanowire lengths, doses and incubation times. Similarly, no major cytotoxic effects were induced by AgNW-containing thin films, as detected by conventional cell viability and imaging assays. However, transmission electron microscopy and Western immunoblotting analysis revealed AgNW-induced autophasosome accumulation together with an upregulation of the autophagy marker protein LC3. Autophagy represents a crucial mechanism in maintaining cellular homeostasis, and our data for the first time demonstrate triggering of such mechanism by AgNW in human phagocytic cells. Finally, atomic force microscopy revealed significant changes in the topology of cells attaching and growing on these films as substrates. Our findings thus emphasize the necessity of comprehensive biohazard assessment of nanomaterials in modern applications and devices and a thorough analysis of risks associated with their possible contact with humans through occupational or environmental exposure. Highlights: ► Thin films containing nanomaterials are subject to increasing contact with humans. ► This

  5. Surface plasmon enhanced photoluminescence in amorphous silicon carbide films by adjusting Ag island film sizes

    International Nuclear Information System (INIS)

    Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide (α-SiC:H) films, and the influences of Ag island films on the optical properties of the α-SiC:H films are investigated. Atomic force microscope images show that Ag nanoislands are formed after Ag coating, and the size of the Ag islands increases with increasing Ag deposition time. The extinction spectra indicate that two resonance absorption peaks which correspond to out-of-plane and in-plane surface plasmon modes of the Ag island films are obtained, and the resonance peak shifts toward longer wavelength with increasing Ag island size. The photoluminescence (PL) enhancement or quenching depends on the size of Ag islands, and PL enhancement by 1.6 times on the main PL band is obtained when the sputtering time is 10 min. Analyses show that the influence of surface plasmons on the PL of α-SiC:H is determined by the competition between the scattering and absorption of Ag islands, and PL enhancement is obtained when scattering is the main interaction between the Ag islands and incident light. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  6. Post deposition purification of PTCDA thin films

    International Nuclear Information System (INIS)

    The decomposition of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules during evaporation of unpurified raw material in ultra high vacuum was studied. The fragments were identified by mass spectrometry and the influence of these fragments and further contaminations of the raw material on the electronic structure of PTCDA thin films was measured by photoemission spectroscopy. Annealing of contaminated PTCDA films was tested as cheap and easy to perform method for (partial) post deposition purification of the contaminated films

  7. Microcrystalline organic thin-film solar cells.

    Science.gov (United States)

    Verreet, Bregt; Heremans, Paul; Stesmans, Andre; Rand, Barry P

    2013-10-11

    Microcrystalline organic films with tunable thickness are produced directly on an indium-tin-oxide substrate, by crystallizing a thin amorphous rubrene film followed by its use as a template for subsequent homoepitaxial growth. These films, with exciton diffusion lengths exceeding 200 nm, produce solar cells with increasing photocurrents at thicknesses up to 400 nm with a fill factor >65%, demonstrating significant potential for microcrystalline organic electronic devices. PMID:23939936

  8. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel; Le, Minh [Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 (United States)

    2015-11-15

    The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

  9. Enhanced photocatalysis by coupling of anatase TiO2 film to triangular Ag nanoparticle island.

    Science.gov (United States)

    Xu, Jinxia; Xiao, Xiangheng; Ren, Feng; Wu, Wei; Dai, Zhigao; Cai, Guangxu; Zhang, Shaofeng; Zhou, Juan; Mei, Fei; Jiang, Changzhong

    2012-01-01

    In order to overcome the low utilization ratio of solar light and high electron-hole pair recombination rate of TiO2, the triangular Ag nanoparticle island is covered on the surface of the TiO2 thin film. Enhancement of the photocatalytic activity of the Ag/TiO2 nanocomposite system is observed. The increase of electron-hole pair generation is caused by the enhanced near-field amplitudes of localized surface plasmon of the Ag nanoparticles. The efficiently suppressed recombination of electron-hole pair caused by the metal-semiconductor contact can also enhance the photocatalytic activity of the TiO2 film. PMID:22548875

  10. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  11. Thin-film Rechargeable Lithium Batteries

    Science.gov (United States)

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  12. Rupture Limit of Thin Moving Films

    Science.gov (United States)

    Padrino, Juan C.; Joseph, Daniel D.; Kim, Hyungjun

    2010-11-01

    The rupture of a thin film in another fluid is studied including the effects of disjoining pressure. The study considers the linear stability of a moving viscous film in a motionless inviscid fluid and of a stagnant viscous film in a motionless viscous fluid. These are analyzed by means of the Navier--Stokes equations and the dissipation approximation based on potential flow. Results reveal that the dissipation method provides a good approximation for the case of a moving film, whereas its predictions are off the mark for the stagnant film case. The thickness of the gap at the trough of Kelvin-Helmholtz waves locates the formation of holes. The wavelength at final collapse is determined by the length of waves at the trough of the corrugated film. The disjoining pressure effects cause very fast break-up for very thin films. These effects influence the cutoff wavenumber. In the limit of small gaps on this corrugated film, the Reynolds and Weber numbers tend to zero with the gap size, the Ohnesorge number increases like the reciprocal of the square root and the Hamaker number like the reciprocal of the square of the gap. The motion of the film does not enter at the point of formation of holes. Moreover, for the most unstable wave, the ratio of the wavelength to film thickness is found to decrease with decreasing film thickness.

  13. Thin Ice Films at Mineral Surfaces.

    Science.gov (United States)

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood. PMID:27377606

  14. Investigating Quantum Oscillations in the Thermal Coefficient of Resistivity of Ultra-thin Ag Capping Layers on Cu for IC Interconnect Applications

    Science.gov (United States)

    Tatem, Elroy

    As the semiconductor industry continues to scale feature sizes, scattering from phonons, surfaces, and grain boundaries result in an increase of metal interconnect resistivity in state-of-the-art integrated circuits (ICs). The interconnect chapter of the 2011 International Technology Roadmap for Semiconductors (ITRS) stated that there are currently no manufacturable solutions in the near term for suitable Cu replacements. Previous studies of thin Ag films deposited on Cu demonstrated oscillations in the electron-phonon interactions within the bilayer system. This thesis investigates oscillations in the resistive properties of the Ag/Cu bilayer system and discusses the applicability of these oscillations to the resistivity challenges facing metal-based IC interconnects. Ag/Cu bilayer films were prepared by physical vapor deposition (PVD). The films were characterized by measuring the electrical resistance of the films at various temperatures and calculating the thermal coefficient of resistance (TCR) for various Ag capping layer thicknesses. Films were further characterized by atomic force microscopy (AFM), Rutherford backscattering (RBS), and scanning electron microscopy (SEM). Patterned Ag-capped Cu lines were fabricated, which exhibited resistive behavior similar to that of the Ag/Cu films. Compared to bare Cu, the resistances of Ag-capped Cu lines and films were lower and exhibited a reduced dependence on temperature. Smaller thermal coefficients of resistivity were also observed for Ag-capped Cu films and patterned lines when compared to Cu alone.

  15. Carrier lifetimes in thin-film photovoltaics

    Science.gov (United States)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  16. Magnetoelectric thin film composites with interdigital electrodes

    Science.gov (United States)

    Piorra, A.; Jahns, R.; Teliban, I.; Gugat, J. L.; Gerken, M.; Knöchel, R.; Quandt, E.

    2013-07-01

    Magnetoelectric (ME) thin film composites on silicon cantilevers are fabricated using Pb(Zr0.52Ti0.45)O3 (PZT) films with interdigital transducer electrodes on the top side and FeCoSiB amorphous magnetostrictive thin films on the backside. These composites without any direct interface between the piezoelectric and magnetostrictive phase are superior to conventional plate capacitor-type thin film ME composites. A limit of detection of 2.6 pT/Hz1/2 at the mechanical resonance is determined which corresponds to an improvement of a factor of approximately 2.8 compared to the best plate type sensor using AlN as the piezoelectric phase and even a factor of approximately 4 for a PZT plate capacitor.

  17. Nanostructured thin films as functional coatings

    Energy Technology Data Exchange (ETDEWEB)

    Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

    2010-06-15

    Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

  18. Nanostructured thin films as functional coatings

    International Nuclear Information System (INIS)

    Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

  19. Study of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and model systems is fabricated by a mask sputtering process. This novel pulse transformer consists of four I-shaped CoZrRe nanometer crystal magnetic-film cores and a Cu thin film coil, deposited on the micro-crystal glass substrate directly. The thickness of thin film core is between 1 and 3 μm, and the area is between 4mm×6 mm and 12mm×6 mm. The coils provide a relatively high induce of 0.8 μm and can be well operated in a frequency range of 0.001~20 MHz.

  20. Niobium Thin Film Characterization for Thin Film Technology Used in Superconducting Radiofrequency Cavities

    Science.gov (United States)

    Dai, Yishu; Valente-Feliciano, Anne-Marie

    2015-10-01

    Superconducting RadioFrequency (SRF) penetrates about 40-100 nm of the top surface, making thin film technology possible in producing superconducting cavities. Thin film is based on the deposition of a thin Nb layer on top of a good thermal conducting material such as Al or Cu. Thin film allows for better control of the surface and has negligible response to the Earth's magnetic field, eliminating the need for magnetic shielding of the cavities. Thin film superconductivity depends heavily on coating process conditions, involving controllable parameters such as crystal plane orientation, coating temperature, and ion energy. MgO and Al2O3 substrates are used because they offer very smooth surfaces, ideal for studying film growth. Atomic Force Microscopy is used to characterize surface's morphology. It is evident that a lower nucleation energy and a long coating time increases the film quality in the r-plane sapphire crystal orientation. The quality of the film increases with thickness. Nb films coated on r-plane, grow along the (001) plane and yield a much higher RRR compared to the films grown on a- and c-planes. This information allows for further improvement on the research process for thin film technology used in superconducting cavities for the particle accelerators. National Science Foundation, Department of Energy, Jefferson Lab, Old Dominion University.

  1. Optical and morphological characterization of photocatalytic TiO2 thin films doped with silver

    International Nuclear Information System (INIS)

    Silver-doped titanium dioxide thin films were deposited on glass substrates by the sol-gel process. Undoped films and films doped with 1 and 3 mol% Ag were annealed at 100 or 500 oC. The optical and morphological properties of the films were analyzed by optical absorption spectroscopy and scanning electron microscopy. Additionally, the films were evaluated for their ability to degrade methylene blue. It was found that the photocatalytic activity is barely sensitive to silver doping for films annealed at 100 oC, whereas the effect of silver resulted in enhanced photocatalytic activity for films annealed at 500 oC. For the latter annealing temperature, the photocatalytic activity increased with increasing Ag doping concentration.

  2. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jisheng

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  3. Electrochemical Analysis of Conducting Polymer Thin Films

    Directory of Open Access Journals (Sweden)

    Bin Wang

    2010-04-01

    Full Text Available Polyelectrolyte multilayers built via the layer-by-layer (LbL method has been one of the most promising systems in the field of materials science. Layered structures can be constructed by the adsorption of various polyelectrolyte species onto the surface of a solid or liquid material by means of electrostatic interaction. The thickness of the adsorbed layers can be tuned precisely in the nanometer range. Stable, semiconducting thin films are interesting research subjects. We use a conducting polymer, poly(p-phenylene vinylene (PPV, in the preparation of a stable thin film via the LbL method. Cyclic voltammetry and electrochemical impedance spectroscopy have been used to characterize the ionic conductivity of the PPV multilayer films. The ionic conductivity of the films has been found to be dependent on the polymerization temperature. The film conductivity can be fitted to a modified Randle’s circuit. The circuit equivalent calculations are performed to provide the diffusion coefficient values.

  4. Thermal conductivity of nanoscale thin nickel films

    Institute of Scientific and Technical Information of China (English)

    YUAN Shiping; JIANG Peixue

    2005-01-01

    The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T = 300 K, which is lower than the Debye temperature ()D = 450 K,the results show that in a film thickness range of about 1-11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.

  5. Preparation of organic thin-film field effect transistor

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The organic thin-film field effect transistor was prepared through vacuum deposition by using teflon as di-electric material. Indium-tin-oxide acted as the source and drain electrodes. Copper phthalocyanine and teflon were used as the semiconductor layer and dielectric layer, respectively. The gate electrode was made of Ag. The channel length between the source and drain was 50 μm. After preparing the source and drain electrodes by lithography, the copper phthalocyanine layer, teflon layer and Ag layerwere prepared by vacuum deposition sequentially. The field effect electron mobility of the device reached 1.1×10ˉ6 cm2/(V@s), and the on/off current ratio reached 500.

  6. Surface morphology of thin films polyoxadiazoles

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2011-12-01

    Full Text Available urpose: The purpose of this paper was to analyse the surface morphology of thin films polyoxadiazoles. Design/methodology/approach: SSix different polymers which belong to the group of polyoxadiazoles were dissolved in the solvent NMP. Each of these polymer was deposited on a glass substrate and a spin coating method was applied with a spin speed of 1000, 2000 and 3000 rev/min. Changes in surface topography and roughness were observed. An atomic force microscope AFM Park System has been used. Photos have been taken in noncontact mode while observing an area of 10 x 10 microns.Findings: The analysis of images has confirmed that the quality of thin films depends upon the used polymers. It was also observed that the parameters of the spin coating method have significant effect on the morphology and the surface roughness. The speed of the spin has got a strong impact on the topography of the thin films obtained.Research limitations/implications: The morphology of polyoxadiazoles thin films has been described. This paper include description how the spin speed influences the morphology of polymer thin films. In order to use a polymer thin film in photovoltaics or optoelectronics it must have a uniform thickness and a low surface roughness. Further research, in which the optical properties of thin films are investigated, is strongly recommended.Practical implications: Conductive polymers may find applications in photovoltaics or optoelectronics. It is important to study this group of material engineering and to find a new use for them. Materials from which thin films are made of will have an impact on the properties and characteristics of electronics devices in which they are be applied.Originality/value: The value of this paper is defining the optimal parameters of spin-coating technology for six polyoxadiazoles. The results allow the choosing optimal parameters of the deposition process. Spin coating is a very good method to obtain thin films which

  7. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement. PMID:26736028

  8. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  9. Thin Films in the Photovoltaic Industry

    International Nuclear Information System (INIS)

    In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

  10. Thin film calorimetry of polymer films

    Science.gov (United States)

    Zhang, Wenhua; Rafailovich, Miriam; Sokolov, Jonathan; Salamon, William

    2000-03-01

    Polystryene and polymethylmethacrylate films for thicknesses ranging from 50nm to 500nm using a direct calorimetric technique (Lai et al, App. Phys. Lett. 67, p9(1995)). Samples were deposited on Ni foils(2-2.5um) and placed in a high vacuum oven. Calibrated heat pulses were input to the polymer films by current pulses to the Ni substrate and temperature changes were determined from the change in Ni resistance. Pulses producing temperature jumps of 3-8K were used and signal averaging over pulses reduced noise levels enough to identify glass transitions down to 50nm. Molecular weight dependence of thick films Tg was used as a temperature calibration.

  11. 热处理对LiFe1-0.01xY0.005xAg0.005xPO4薄膜光波导传感元件气敏性的影响%Effect of Heat Treatment on LiFe1-0.01xY0.005xAg0.005xPO4 Thin Film Optical Waveguide's Gas Sensing Properties

    Institute of Scientific and Technical Information of China (English)

    帕提曼·尼扎木丁; 阿布力孜·伊米提; 米日古丽·依明; 帕提曼·亚森; 艾拜都拉·热合曼; 司马义·努尔拉

    2012-01-01

    以FeSO4·7H2O,H3PO4,LiOH·H2O,AgNO3及Y(NO3)3·6H2O为原料,利用水热法一步合成出了LiFe1 -0.01xY0.005xAg0.005PO4粉体(x=0.5,1.0),并将该材料作为敏感试剂,用旋转-甩涂法做成纳米薄膜固定在锡掺杂玻璃光波导表面,在不同温度下进行热处理.采用紫外-可见分光光度计、测厚仪以及自组装的玻璃光波导气敏测试仪研究了热处理对LiFe1-0.01xY0.005xAg0.005xPO4薄膜光学及气敏特性的影响.研究结果表明:在450℃下进行热处理的薄膜元件具有良好的光学透明及较好的气敏特性.相同浓度的不同挥发性有机气体中,该传感元件对二甲苯气体有很好的选择性响应,其检测响应范围为1×10-7~1×10-3(V/V),响应-恢复时间分别小于5和100s.%LiFe1 -0.01xY0.005xAg0.005PO4 ( x =0.5,1.0) was synthesized via hydrothermal method by one step using FeSO4·7H2O,H3PO4,LiOH·H2O,AgNO3 and Y(NO3)3·6H2O as precursors. LiFe1-0.01xY0.005xAg0.005xPO4 was selected as sensing materials and was subsequently utilized in a spin-coating procedure for the fabrication of LiFe1-0.01x Y0.005x Ag0.005xPO4 thin Elms,and then the coated film was dried at different temperatures. The effect of heat treatment on LiFe1-0.01xY0.005xAg0.005xPO4 thin film optical waveguide's gas sensing properties were studiedusing ultraviolet spectrophotometer,ellipsometer and self assembled optical waveguide gases testing apparatus. The experimental results indicated that the thin film sensing element,which was dried at 450℃,was exhibited good sensing capabilities and optical transparent. The sensor had higher response to the xylene gas than the other various volatile organic compounds at same concentration. These sensors exhibited good response to xylene gas in the range of 1×l0-7 to 1× 10-3 with response and recovery times less than 5 and 100 s.

  12. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  13. Electrical Properties of Ag-Doped Ge2Sb2Te5 Films Used for Phase Change Random Access Memory

    Institute of Scientific and Technical Information of China (English)

    XIA Ji-Lin; LIU Bo; SONG Zhi-Tang; FENG Song-Lin; CHEN Bomy

    2005-01-01

    @@ Ag-doped Ge2Sb2 Te5 films were deposited by rf magnetron sputtering on SiO2/Si substrates.The content of Ag ranging from 4.5 to 11.3 at.% is determined by inductively coupled plasma atomic emission spectrometry.The crystallization temperature of Ag-doped Ge2Sb2 Te5 increases with the increasing Ag content and the stability of phase change film is improved greatly.Structures were measured by x-ray diffraction and the face-centered-cubic structure was more stable after Ag doping.Four-point probe was used to measure the sheet resistance of Agdoped Ge2Sb2 Te5 films annealed at different temperatures and it is indicated that Ag atoms increase the sheet resistance of Ge2Sb2 Te5 thin film when the annealing temperature is higher than about 360℃, which is beneficial for reducing the reset current.Current-voltage curves were tested and it is demonstrated that 4.5 at.% Ag doping into the Ge2Sb2Te5 film can reduce the threshold current from 1.46mA to 0.25mA and can only increase the threshold voltage slightly, which is very useful for low energy consumption.

  14. Crystallization of zirconia based thin films.

    Science.gov (United States)

    Stender, D; Frison, R; Conder, K; Rupp, J L M; Scherrer, B; Martynczuk, J M; Gauckler, L J; Schneider, C W; Lippert, T; Wokaun, A

    2015-07-28

    The crystallization kinetics of amorphous 3 and 8 mol% yttria stabilized zirconia (3YSZ and 8YSZ) thin films grown by pulsed laser deposition (PLD), spray pyrolysis and dc-magnetron sputtering are explored. The deposited films were heat treated up to 1000 °C ex situ and in situ in an X-ray diffractometer. A minimum temperature of 275 °C was determined at which as-deposited amorphous PLD grown 3YSZ films fully crystallize within five hours. Above 325 °C these films transform nearly instantaneously with a high degree of micro-strain when crystallized below 500 °C. In these films the t'' phase crystallizes which transforms at T > 600 °C to the t' phase upon relaxation of the micro-strain. Furthermore, the crystallization of 8YSZ thin films grown by PLD, spray pyrolysis and dc-sputtering are characterized by in situ XRD measurements. At a constant heating rate of 2.4 K min(-1) crystallization is accomplished after reaching 800 °C, while PLD grown thin films were completely crystallized already at ca. 300 °C. PMID:26119755

  15. Luminescence Properties of Tb3+-Doped LuAG Films Prepared by Pechini Sol-Gel Method

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Lu3Al5O12 (LuAG) thin films with different Tb3+ concentration were prepared on carefully cleaned (111) silicon wafer by a Pechini process and dip-coating technique. Heat treatment was performed in the temperature range from 800 to 1100 ℃. The crystal structure was analyzed by XRD. The results show that LuAG film starts to crystallize at about 900 ℃, and the particle size increases with the sintering temperature. Excitation and emission spectra of Tb3+ doped LuAG films were measured. The effects of heat-treatment temperature and doping concentration of Tb3+ on the luminescent properties were also investigated. For a comparison study, Tb3+-doped LuAG powders were also prepared by the same sol-gel method.

  16. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  17. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  18. Thin Film Photovoltaic/Thermal Solar Panels

    Institute of Scientific and Technical Information of China (English)

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  19. Thin-film solar cells. Duennschichtsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Bloss, W.H.; Pfisterer, F.; Schock, H.W. (Stuttgart Univ. (Germany, F.R.). Inst. fuer Physikalische Elektronik)

    1990-01-01

    The authors present the state of the art in research and development, technology, production and marketing, and of the prospects of thin-film solar cells. Thin-film solar cells most used at present are based on amorphous silicon and on the compound semiconductors CuInSe{sub 2} and CdTe. Efficiencies in excess 12% have been achieved (14.1% with CuInSe{sub 2}). Stability is the main problem with amorphous silicon. Thin-film solar cells made from compound semiconductors do not have this problem, though their cost-effective series production needs to be shown still. The development potential of the three types mentioned will be ca. 30% in terms of efficiency: in terms of production cost, it is estimated with some certainty to be able to reach the baseline of 1 DM/Watt peak output (W{sub p}). (orig.).

  20. Vibration welding system with thin film sensor

    Science.gov (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  1. Method for synthesizing thin film electrodes

    Science.gov (United States)

    Boyle, Timothy J.

    2007-03-13

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  2. Solid Surfaces, Interfaces and Thin Films

    CERN Document Server

    Lüth, Hans

    2010-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure physics particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures as well as to superconductor/semiconductor interfaces and magnetic thin films. The latter topic was significantly extended in this new edition by more details about the giant magnetoresistance and a section about the spin-transfer torque mechanism including one new problem as exercise. Two new panels about Kerr-effect and spin-polarized scanning tunnelling microscopy were added, too. Furthermore, the meanwhile important group III-nitride surfaces and high-k oxide/semiconductor interfaces are shortly discu...

  3. Structural, morphological, electrical, and optical properties of silver thin films of varying thickness deposited on cupric oxide

    Science.gov (United States)

    Hajakbari, Fatemeh; Shafieinejad, Farzaneh

    2016-03-01

    In this investigation, silver (Ag) films of varying thickness (25-100 nm) were grown on cupric oxide (CuO) on silicon and quartz. The CuO preparation was carried out by the thermal oxidation annealing of copper (Cu) thin films deposited by DC magnetron sputtering. The physical properties of the prepared films were studied by different techniques. Rutherford backscattering spectroscopy (RBS) analysis indicated that the Ag film thickness was about 25-100 nm. X-ray diffraction (XRD) results showed that by increasing Ag thickness, the film crystallinity was improved. Also, atomic force microscopy (AFM) and scanning electron microscopy (SEM) results demonstrated that the surface morphology and the grain size were affected by the Ag film thickness. Furthermore, the electrical resistivity of films determined by four-point probe measurements versus the Ag film thickness was discussed. A reduction in the optical band gap energy of CuO is observed from 1.51 to 1.42 eV with an increase in Ag film thickness to 40 nm in Ag/CuO films.

  4. Schottky Junction Methane Sensors Using Electrochemically Grown Nanocrystalline-Nanoporous ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    P. K. Basu

    2009-01-01

    Full Text Available Nanocrystalline-nanoporous ZnO thin films were prepared by an electrochemical anodization method, and the films were tested as methane sensors. It was found that Pd-Ag catalytic contacts showed better sensing performance compared to other noble metal contacts like Pt and Rh. The methane sensing temperature could be reduced to as low as 100∘C by sensitizing nanocrystalline ZnO thin films with Pd, deposited by chemical method. The sensing mechanism has been discussed briefly.

  5. Capillary instabilities in thin films. I. Energetics

    Energy Technology Data Exchange (ETDEWEB)

    Srolovitz, D.J.; Safran, S.A.

    1986-07-01

    A stability theory is presented which describes the conditions under which thin films rupture. It is found that holes in the film will either grow or shrink, depending on whether their initial radius is larger or smaller than a critical value. If the holes grow large enough, they impinge to form islands; the size of which are determined by the surface energies. The formation of grooves where the grain boundary meets the free surface is a potential source of holes which can lead to film rupture. Equilibrium grain boundary groove depths are calculated for finite grain sizes. Comparison of groove depth and film thickness yields microstructural conditions for film rupture. In addition, pits which form at grain boundary vertices, where three grains meet, are another source of film instability.

  6. Thin film oxygen partial pressure sensor

    Science.gov (United States)

    Wortman, J. J.; Harrison, J. W.; Honbarrier, H. L.; Yen, J.

    1972-01-01

    The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

  7. Tailoring electronic structure of polyazomethines thin films

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2010-09-01

    Full Text Available Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic devices.Findings: The method used allow for pure pristine polymer thin films to be prtepared without any unintentional doping taking place during prepoaration methods. This is a method based on polycondensation process, where polymer chain developing is running directly due to chemical reaction between molecules of bifunctional monomers. The method applied to prepare thin films of polyazomethines takes advantage of monomer transporting by mreans of neutral transport agent as pure argon is.Research limitations/implications: The main disadvantage of alternately conjugated polymers seems to be quite low mobility of charge carrier that is expected to be a consequence of their backbone being built up of sp2 hybridized carbon and nitrogen atoms. Varying technological conditions towards increasing reagents mass transport to the substrate is expected to give such polyazomethine thin films organization that phenylene rin stacking can result in special π electron systems rather than linear ones as it is the case.Originality/value: Our results supply with original possibilities which can be useful in ooking for good polymer materials for optoelectronic and photovoltaic applications. These results have been gained on polyazomethine thin films but their being isoelectronic counterpart to widely used poly p-phenylene vinylene may be very convenient to develop high efficiency polymer solar cells

  8. Advances in thin-film solar cells

    CERN Document Server

    Dharmadasa, I M

    2012-01-01

    This book concentrates on the latest developments in our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. It extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multilayer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible, and infra-red) within the solar spectrum and combines

  9. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.;

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...... and strain sensitivity using two- and four-point measurement method. We have found that polyaniline has a negative gauge factor of K = -4.9, which makes it a candidate for piezoresistive read-out in polymer based MEMS-devices. (C) 2007 Elsevier B.V. All rights reserved....

  10. Thin Films Made Fast and Modified Fast

    International Nuclear Information System (INIS)

    Thin films are playing a more and more important role for technological applications and there are many aspects of materials surface processing and thin film production, ranging from simple heat treatments to ion implantation or laser surface treatments. These methods are often very complicated, involving many basic processes and they have to be optimized for the desired application. Nuclear methods, especially Moessbauer spectroscopy, can be successfully applied for this task and some examples will be presented for laser-beam and ion-beam based processes.

  11. Feasibility Study of Thin Film Thermocouple Piles

    Science.gov (United States)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  12. Electrical analysis of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Graça, M.P.F., E-mail: mpfg@ua.pt [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Saraiva, M. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Freire, F.N.A. [Mechanics Engineering Department, Ceará Federal University, Fortaleza (Brazil); Valente, M.A.; Costa, L.C. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)

    2015-06-30

    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O{sub 2} was kept constant at 1 Pa, while the O{sub 2} partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb{sub 2}O{sub 5} stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O{sub 2}). • Raman showed that increasing P(O{sub 2}), Nb{sub 2}O{sub 5} amorphous increases. • Conductivity tends to decrease with the increase of P(O{sub 2}). • Dielectric analysis indicates the inexistence of preferential grow direction.

  13. Electrical analysis of niobium oxide thin films

    International Nuclear Information System (INIS)

    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O2 was kept constant at 1 Pa, while the O2 partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb2O5 stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O2). • Raman showed that increasing P(O2), Nb2O5 amorphous increases. • Conductivity tends to decrease with the increase of P(O2). • Dielectric analysis indicates the inexistence of preferential grow direction

  14. Dielectric breakdown in nano-porous thin films

    Science.gov (United States)

    Borja, Juan Pablo

    Unknown to most computer users and mobile device enthusiasts, we have finally entered into a critical age of chip manufacturing. January of 2014 marks the official start of the quest by the semiconductor industry to successfully integrate sub 14nm process technology nodes in accordance to the International Technology Roadmap for Semiconductors (ITRS). The manufacturing of nano-scale features represents a major bottleneck of its own. However, a bigger challenge lies in reliably isolating the massive chip interconnect network. The present work is aimed at generating a theoretical and experimental framework to predict dielectric breakdown for thin films used in computer chip components. Here, a set of experimental techniques are presented to assess and study dielectric failure in novel thin films. A theory of dielectric breakdown in thin nano-porous films is proposed to describe combined intrinsic and metal ion catalyzed failure. This theory draws on experimental evidence as well as fundamental concepts from mass and electronic charge transport. The drift of metal species was found to accelerate intrinsic dielectric failure. The solubility of metals species such as Cu was found to range from 7.0x1025 ions/m3 to 1.86x1026 ions/m3 in 7% porous SiCOH films. The diffusion coefficient for Cu species was found to span from 4.2x10-19 m2/s to 1.86x10-21 m2/s. Ramped voltage stress experiments were used to identify intrinsic failure from metal catalyzed failure. Intrinsic breakdown is defined when time to failure against applied field ramp rate results in ∂(ln(TTF))/∂(ln(R)) ≈ -1. Intrinsic failure was studied using Au. Here, ∂(ln(TTF))/∂(ln(R)) ≈ -0.95, which is an experimental best case scenario for intrinsic failure. Au is commonly reluctant to ionize which means that failure occurs in the absence of ionic species. Metal catalyzed failure was investigated using reactive electrodes such as Cu, and Ag. Here, trends for ∂(ln(TTF))/∂(ln(R)) significantly

  15. Dynamics of liquid films and thin jets

    Science.gov (United States)

    Zak, M.

    1979-01-01

    The theory of liquid films and thin jets as one- and two-dimensional continuums is examined. The equations of motion have led to solutions for the characteristic speeds of wave propagation for the parameters characterizing the shape. The formal analogy with a compressible fluid indicates the possibility of shock wave generation in films and jets and the formal analogy to the theory of threads and membranes leads to the discovery of some new dynamic effects. The theory is illustrated by examples.

  16. Viscous fingering in volatile thin films

    OpenAIRE

    Agam, Oded

    2008-01-01

    A thin water film on a cleaved mica substrate undergoes a first order phase transition between two values of film thickness. By inducing a finite evaporation rate of the water, the interface between the two phases develops a fingering instability similar to that observed in the Saffman-Taylor problem. We draw the connection between the two problems, and construct solutions describing the dynamics of evaporation in this system.

  17. Thin film dynamics with surfactant phase transition

    OpenAIRE

    Köpf, M. H.; Gurevich, S. V.; Friedrich, R.

    2009-01-01

    A thin liquid film covered with an insoluble surfactant in the vicinity of a first-order phase transition is discussed. Within the lubrication approximation we derive two coupled equations to describe the height profile of the film and the surfactant density. Thermodynamics of the surfactant is incorporated via a Cahn-Hilliard type free-energy functional which can be chosen to describe a transition between two stable phases of different surfactant density. Within this model, a linear stabilit...

  18. Perovskite thin films via atomic layer deposition.

    Science.gov (United States)

    Sutherland, Brandon R; Hoogland, Sjoerd; Adachi, Michael M; Kanjanaboos, Pongsakorn; Wong, Chris T O; McDowell, Jeffrey J; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J; Sargent, Edward H

    2015-01-01

    A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

  19. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  20. Exciton absorption spectrum of thin Ag2ZnI4

    International Nuclear Information System (INIS)

    In Ag2ZnI4 compound thin films one investigated into the electron spectrum of absorption within 3-6 eV photon energy range. The boundary of interband absorption is determined to correspond to the direct permitted transitions with Eg = 3.7 eV forbidden gap width. A strong exciton band at E = 3.625 eV (80 K) Γ half width temperature run of which within 80-390 K range is governed by exciton-phonon interaction typical for quasi-single-dimensional excitons, is adjacent to the absorption boundary. At T ≤ 390 K one observes a bend in E(T) and Γ(T) dependences associated with generation of the Frenkel defects and followed by transfer of Ag ions to the interstices and vacancies of the compound crystalline lattice

  1. SELF-LUBRICATING THIN FILMS FOR TOOL STEELS

    Directory of Open Access Journals (Sweden)

    Peter Jurči

    2012-02-01

    Full Text Available Specimens made from Vanadis 6 cold work tool steel were machined, ground, heat processed by standard regime and finally mirror polished. After that, they were layered with CrAgN. The Ag-content in the layers was chosen to 3 wt% and 15 wt% respectively. Microstructural analysis revealed that the addition of 3 wt%Ag did not influence the growth manner of the films but the addition of 15 wt%Ag has made considerable changes in the film growth. The layer with 3 wt%Ag had excellent adhesion on the steel substrate. On the other hand, the addition of 15%Ag had strongly negative impact on the coating adhesion. Similar effect of different Ag addition has been established also to both the hardness and the Young modulus of the films, also. Both films have superior tribological properties against hard material (alumina as well as against soft counterpart (CuSn6 as-cast bronze.

  2. YBCO thin films in ac and dc films

    CERN Document Server

    Shahzada, S

    2001-01-01

    We report studies on the dc magnetization of YBCO thin films in simultaneously applied dc and ac fields. The effect of the ac fields is to decrease the irreversible magnetization drastically leading to complete collapse of the hysteresis loops for relatively small ac fields (250e). The magnitude of the decrease depends on the component of the ac field parallel to the c-axis. The decrease is non-linear with ac amplitude and is explained in the framework of the critical state response of ultra thin films in perpendicular geometry. The ac fields increase the relaxation rapidly at short times while the long time response appears unaffected. (author)

  3. Pulsed-laser-induced nanoscale island formation in thin metal-on-oxide films

    OpenAIRE

    Henley, SJ; Carey, JD; Silva, SRP

    2005-01-01

    he mechanisms controlling the nanostructuring of thin metal-on-oxide films by nanosecond pulsed excimer lasers are investigated. When permitted by the interfacial energetics, the breakup of the metal film into nanoscale islands is observed. A range of metals (Au, Ag, Mo, Ni, Ti, and Zn) with differing physical and thermodynamic properties, and differing tendencies for oxide formation, are investigated. The nature of the interfacial metal-substrate interaction, the thermal conductivity of the ...

  4. Energetic Deposition of Niobium Thin Film in Vacuum

    OpenAIRE

    Wu, Genfa

    2002-01-01

    Niobium thin films are expected to be free of solid inclusions commonly seen in solid niobium. For particle accelerators, niobium thin film has the potential to replace the solid niobium in the making of the accelerating structures. In order to understand and improve the superconducting performance of niobium thin films at cryogenic temperature, an energetic vacuum deposition system has been developed to study deposition energy effects on the properties of niobium thin films on various substr...

  5. Correlated dewetting patterns in thin polystyrene films

    International Nuclear Information System (INIS)

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes

  6. Correlated dewetting patterns in thin polystyrene films

    CERN Document Server

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  7. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    G V Kunte; S A Shivashankar; A M Umarji

    2008-11-01

    Thin films of the hydrated phase of tungsten oxide, hydrotungstite (H2WO4.H2O), have been grown on glass substrates using a dip-coating technique. The -axis oriented films have been characterized by X-ray diffraction and scanning electron microscopy. The electrical conductivity of the films is observed to vary with humidity and selectively show high sensitivity to moisture at room temperature. In order to understand the mechanism of sensing, the films were examined by X-ray diffraction at elevated temperatures and in controlled atmospheres. Based on these observations and on conductivity measurements, a novel sensing mechanism based on protonic conduction within the surface layers adsorbed onto the hydrotungstite film is proposed.

  8. Tailored piezoelectric thin films for energy harvester

    NARCIS (Netherlands)

    Wan, X.

    2013-01-01

    Piezoelectric materials are excellent materials to transfer mechanical energy into electrical energy, which can be stored and used to power other devices. PiezoMEMS is a good way to combine silicon wafer processing and piezoelectric thin film technology and lead to a variety of miniaturized and prem

  9. New techniques for producing thin boron films

    International Nuclear Information System (INIS)

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  10. Flexoelectricity in barium strontium titanate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning, E-mail: xjiang5@ncsu.edu [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Shu, Longlong [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Electronic Materials Research Laboratory, International Center for Dielectric Research, Xi' an Jiao Tong University, Xi' an, Shaanxi 710049 (China); Maria, Jon-Paul [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  11. US Polycrystalline Thin Film Solar Cells Program

    Science.gov (United States)

    Ullal, Harin S.; Zweibel, Kenneth; Mitchell, Richard L.

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R and D on copper indium diselenide and cadmium telluride thin films. The objective of the program is to support research to develop cells and modules that meet the U.S. Department of Energy's long-term goals by achieving high efficiencies (15 to 20 percent), low-cost ($50/m(sup 2)), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe2 and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The U.S. Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe2 and CdTe with subcontracts to start in spring 1990.

  12. US polycrystalline thin film solar cells program

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H S; Zweibel, K; Mitchell, R L [Solar Energy Research Inst., Golden, CO (USA)

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

  13. Incipient plasticity in metallic thin films

    NARCIS (Netherlands)

    Soer, W. A.; De Hosson, J. Th. M.; Minor, A. M.; Shan, Z.; Asif, S. A. Syed; Warren, O. L.

    2007-01-01

    The authors have compared the incipient plastic behaviors of Al and Al-Mg thin films during indentation under load control and displacement control. In Al-Mg, solute pinning limits the ability of dislocations to propagate into the crystal and thus substantially affects the appearance of plastic inst

  14. Rechargeable Thin-film Lithium Batteries

    Science.gov (United States)

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  15. A ferroelectric transparent thin-film transistor

    NARCIS (Netherlands)

    Prins, MWJ; GrosseHolz, KO; Muller, G; Cillessen, JFM; Giesbers, JB; Weening, RP; Wolf, RM

    1996-01-01

    Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8Os3 as a ferroelectric insula

  16. Electrical characterization of thin film ferroelectric capacitors

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, J.; Hueting, R.J.E.

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offe

  17. Resistance contact thin-film resistor

    Directory of Open Access Journals (Sweden)

    Spirin V. G.

    2008-10-01

    Full Text Available The analytical model of the calculation of the contact resistance of the thin-film resistor is Offered. The Explored dependency of the contact resistance from wedge of the pickling. The Considered influence adhesive layer on warm-up stability of the resistor. They Are Received formulas of the calculation systematic and casual inaccuracy contributed by contact resistance.

  18. Stabilized thin film heterostructure for electrochemical applications

    DEFF Research Database (Denmark)

    2015-01-01

    The invention provides a method for the formation of a thin film multi-layered heterostructure upon a substrate, said method comprising the steps of: a. providing a substrate; b. depositing a buffer layer upon said substrate, said buffer layer being a layer of stable ionic conductor (B); c. depos...

  19. Electrostatic Discharge Effects in Thin Film Transistors

    NARCIS (Netherlands)

    Golo, Natasa

    2002-01-01

    Although amorphous silicon thin film transistors (α-Si:H TFT’s) have a very low electron mobility and pronounced instabilities of their electrical characteristics, they are still very useful and they have found their place in the semiconductors industry, as they possess some very good properties: th

  20. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  1. Polarization Fatigue in Ferroelectric Thin Films

    Institute of Scientific and Technical Information of China (English)

    王忆; K.H.WONG; 吴文彬

    2002-01-01

    The fatigue problem in ferroelectric thin films is investigated based on the switched charge per unit area versus switching cycles. The temperature, dielectric permittivity, voltage bias, frequency and defect valence dependent switching polarization properties are calculated quantitatively with an extended Dawber-Scott model. The results are in agreement with the recent experiments.

  2. Surface roughness evolution of nanocomposite thin films

    NARCIS (Netherlands)

    Turkin, A; Pei, Y.T.; Shaha, K.P.; Chen, C.Q.; Vainchtein, David; Hosson, J.Th.M. De

    2009-01-01

    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the growin

  3. Monte Carlo simulation of magnetic nanostructured thin films

    Institute of Scientific and Technical Information of China (English)

    Guan Zhi-Qiang; Yutaka Abe; Jiang Dong-Hua; Lin Hai; Yoshitake Yamazakia; Wu Chen-Xu

    2004-01-01

    @@ Using Monte Carlo simulation, we have compared the magnetic properties between nanostructured thin films and two-dimensional crystalline solids. The dependence of nanostructured properties on the interaction between particles that constitute the nanostructured thin films is also studied. The result shows that the parameters in the interaction potential have an important effect on the properties of nanostructured thin films at the transition temperatures.

  4. Practical design and production of optical thin films

    CERN Document Server

    Willey, Ronald R

    2002-01-01

    Fundamentals of Thin Film Optics and the Use of Graphical Methods in Thin Film Design Estimating What Can Be Done Before Designing Fourier Viewpoint of Optical Coatings Typical Equipment for Optical Coating Production Materials and Process Know-How Process Development Monitoring and Control of Thin Film Growth Appendix: Metallic and Semiconductor Material Graphs Author IndexSubject Index

  5. Ultra-Thin Films of Poly(acrylic acid)/Silver Nanocomposite Coatings for Antimicrobial Applications

    OpenAIRE

    Alaa Fahmy; Eisa, Wael H.; Mohamed Yosef; Ali Hassan

    2016-01-01

    In this work not only colloids of poly(acrylic acid) (PAA) embedded with silver nanoparticles (Ag-NPs) but thin films (10 nm) also were deposited using electrospray deposition technique (ESD). A mixture of sodium borohydride (NaBH4) and ascorbic acid (AA) were utilized to reduce the silver ions to generate Ag-NPs in the PAA matrix. Moreover, sodium tricitrate was used to stabilize the prepared colloids. The obtained colloids and films were characterized using UV-visible, transmission electron...

  6. Effect of a Magnetic Field on the Preparation of Silver Nanowires Using Solid Electrolyte Thin Films

    Institute of Scientific and Technical Information of China (English)

    Haifei YAO; Jialin SUN; Wei LIU; Hongsan SUN

    2007-01-01

    The effect of an external magnetic field on the preparation of silver nanowires was studied. The silver nanowires were synthesized using solid electrolyte RbAg4l5 thin films by applying both a direct current (DC) electric field and a magnetic field. The RbAg4l5 thin films, which were prepared by deposition at room temperature and atmospheric pressure on a NaCl substrate, were used for the transfer of Ag+ ions between two Ag electrodes during the preparation process. When only the DC electric field is applied, the silver ions migrate toward the cathode. On the edge of the silver film at the cathode the Ag+ ions congregate to form aligned nanowires. If the magnetic field is also applied perpendicular to the DC electric field, the morphology of the nanowires can be controlled by rotating the sample in the magnetic field. Experimental results show that the growth of the silver nanowires is determined by the Ag+ ionic flux.

  7. Highly flexible transparent thin film heaters based on silver nanowires and aluminum zinc oxides

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Hahn-Gil; Kim, Jin-Hoon; Song, Jun-Hyuk; Jeong, Unyong; Park, Jin-Woo, E-mail: jwpark09@yonsei.ac.kr

    2015-08-31

    In this work, we developed highly flexible transparent film heaters (f-TFHs) composed of Ag nanowire networks (AgNWs) and aluminum zinc oxide (AZO). Uniform AgNWs were roll-to-roll coated on polyethylene terephthalate (PET) substrates using the Mayer rod method, and AZO was sputter-deposited atop the AgNWs at room temperature. The sheet resistance (R{sub s}) and transparency (T{sub opt}) of the AZO-coated AgNWs changed only slightly compared with the uncoated AgNWs. AZO is thermally less conductive than the heat pipes, but increases the thermal efficiency of the heaters blocking the heat convection through the air. Based on Joule heating, a higher average film temperature (T{sub ave}) is attained at a fixed electric potential drop between electrodes (ϕ) as the R{sub s} of the film decreases. Our experimental results revealed that T{sub ave} of the hybrid f-TFH is higher than AgNWs when the ratio of the area coverage of AgNWs to AZO is over a certain value. When a ϕ as low as 3 V/cm was applied to 5 cm × 5 cm f-TFHs, the maximum temperature of the hybrid film was over 100 °C, which is greater than that of AgNWs by more than 30 °C. Furthermore, uniform heating throughout the surfaces is achieved in the hybrid films while heating begins in small areas where densities of the nanowires (NWs) are the highest in the bare network. The non-uniform heating decreases the lifetime of f-TFHs by forming hot spots. Cyclic bending test results indicated that the hybrid films were as flexible as the AgNWs, and the R{sub s} of the hybrid films changes only slightly until 5000 cycles. Combined with the high-throughput coating technology presented here, the hybrid films will provide a robust and scalable strategy for large-area f-TFHs with highly enhanced performance. - Highlights: • We developed highly efficient flexible thin film heaters based on Ag nanowires and AZO composites. • In the composite, AZO plays an important role as an insulation blanket to block heat loss to

  8. Thin Films Characterization by Ultra Trace Metrology

    International Nuclear Information System (INIS)

    Sensitive and accurate characterization of thin films used in nanoelectronics, thinner than a few nm, represents a challenge for many conventional methods, especially when considering in-line control. With capabilities in the E10 at/cm2 (2O3 tunnel oxide deposited on a magnetic stack. On the other hand, composition analysis by TXRF, and especially the detection of minor elements into thin films, requires the use of a specific incident angle to optimize sensitivity. Under the best conditions, determination of the composition of Co -based self aligned barriers (CoWP and CoWMoPB films with Co concentration >80%) is done with a precision of 6% on P, 8% on Mo and 13% on W (standard deviation)

  9. Hematite thin films: growth and characterization

    Science.gov (United States)

    Uribe, J. D.; Osorio, J.; Barrero, C. A.; Giratá, D.; Morales, A. L.; Devia, A.; Gómez, M. E.; Ramirez, J. G.; Gancedo, J. R.

    We have grown hematite (α - Fe 2 O 3) thin films on stainless steel and (001)-silicon single-crystal substrates by RF magnetron sputtering process in argon atmosphere at substrate temperatures from 400 to 800°C. Conversion Electron Mössbauer (CEM) spectra of the sample grown on stainless steel at 400°C exhibit values for hyperfine parameter characteristic of bulk hematite phase in the weak ferromagnetic state. Also, the relative line intensity ratio suggests that the magnetization vector of the polycrystalline film is aligned preferentially parallel to the surface. The X-ray diffraction (XRD) pattern of the polycrystalline thin film grown on steel substrates also corresponds to α - Fe 2O3. The samples were also analyzed by Atomic Force Microscopy (AFM), those grown on stainless steel reveal a morphology consisting of columnar grains with random orientation, given the inhomogeneity of the substrate surface.

  10. Thin film instability with thermal noise

    CERN Document Server

    Diez, Javier A; Fernández, Roberto

    2016-01-01

    We study the effects of stochastic thermal fluctuations on the instability of the free surface of a flat liquid film upon a solid substrate. These fluctuations are represented as a standard Brownian motion that can be added to the deterministic equation for the film thickness within the lubrication approximation. Here, we consider that while the noise term is white in time, it is coloured in space. This allows for the introduction of a finite correlation length in the description of the randomized intermolecular interaction. Together with the expected spatial periodicity of the flow, we find a dimensionless parameter, $\\beta$, that accounts for the relative importance of the spatial correlation. We perform here the linear stability analysis (LSA) of the film under the influence of both terms, and find the corresponding power spectra for the amplitudes of the normal modes of the instability. We compare this theoretical result with the numerical simulations of the complete non-linear problem, and find a good ag...

  11. Thin blend films of cellulose and polyacrylonitrile

    Science.gov (United States)

    Lu, Rui; Zhang, Xin; Mao, Yimin; Briber, Robert; Wang, Howard

    Cellulose is the most abundant renewable, biocompatible and biodegradable natural polymer. Cellulose exhibits excellent chemical and mechanical stability, which makes it useful for applications such as construction, filtration, bio-scaffolding and packaging. To further expand the potential applications of cellulose materials, their alloying with synthetic polymers has been investigated. In this study, thin films of cotton linter cellulose (CLC) and polyacrylonitrile (PAN) blends with various compositions spanning the entire range from neat CLC to neat PAN were spun cast on silicon wafers from common solutions in dimethyl sulfoxide / ionic liquid mixtures. The morphologies of thin films were characterized using optical microscopy, atomic force microscopy, scanning electron microscopy and X-ray reflectivity. Morphologies of as-cast films are highly sensitive to the film preparation conditions; they vary from featureless smooth films to self-organized ordered nano-patterns to hierarchical structures spanning over multiple length scales from nanometers to tens of microns. By selectively removing the PAN-rich phase, the structures of blend films were studied to gain insights in their very high stability in hot water, acid and salt solutions.

  12. Fabrication and characterization of Ag/polymer nanocomposite films through layer-by-layer self-assembly technique

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xiaohong [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Graduate School, Chinese Academy of Science, Beijing 100039 (China); Wang Jinqing [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhang Junyan [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)], E-mail: junyanzh@yahoo.com; Liu Bin; Zhou Jinfang [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Graduate School, Chinese Academy of Science, Beijing 100039 (China); Yang Shengrong [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)], E-mail: sryang@lzb.ac.cn

    2007-07-31

    Multilayer nanocomposite films composed of negative charged Ag nanosized particles and cationic polyallylamine hydrochloride (PAH) molecules were fabricated on polymer modified single-crystal silicon and flat glass slides by a layer-by-layer (LBL) molecular self-assembly technique. The X-ray photoelectron spectroscopy analysis showed that the formed Ag particles successfully absorbed onto the positively charged surfaces. The atomic force microscopy image of a two-cycle Ag/PAH bilayer film showed that no surface damage or defects existed on the thin-films surface. The Ag particles were densely and homogeneously distributed on the surface and relatively uniform in size. Goniometry was employed to verify the assembly process and the water contact angles oscillated regularly, depending on the composition of the outermost layer. By using the LBL deposition technique, a molecular-level ordered multilayer film with the thickness up to 40 layers (20 bilayers) was obtained. Results from UV-vis spectroscopy and ellipsometry measurements revealed that the self-assembly of the Ag/PAH multilayer film was well quantitative and reproducible. Thus we can conclude that the consecutive LBL deposition technique is a feasible and effective way to produce multilayer film and control the surface properties.

  13. Fabrication and characterization of Ag/polymer nanocomposite films through layer-by-layer self-assembly technique

    International Nuclear Information System (INIS)

    Multilayer nanocomposite films composed of negative charged Ag nanosized particles and cationic polyallylamine hydrochloride (PAH) molecules were fabricated on polymer modified single-crystal silicon and flat glass slides by a layer-by-layer (LBL) molecular self-assembly technique. The X-ray photoelectron spectroscopy analysis showed that the formed Ag particles successfully absorbed onto the positively charged surfaces. The atomic force microscopy image of a two-cycle Ag/PAH bilayer film showed that no surface damage or defects existed on the thin-films surface. The Ag particles were densely and homogeneously distributed on the surface and relatively uniform in size. Goniometry was employed to verify the assembly process and the water contact angles oscillated regularly, depending on the composition of the outermost layer. By using the LBL deposition technique, a molecular-level ordered multilayer film with the thickness up to 40 layers (20 bilayers) was obtained. Results from UV-vis spectroscopy and ellipsometry measurements revealed that the self-assembly of the Ag/PAH multilayer film was well quantitative and reproducible. Thus we can conclude that the consecutive LBL deposition technique is a feasible and effective way to produce multilayer film and control the surface properties

  14. Electroanalysis of tetracycline using nickel-implanted boron-doped diamond thin film electrode applied to flow injection system.

    Science.gov (United States)

    Treetepvijit, Surudee; Chuanuwatanakul, Suchada; Einaga, Yasuaki; Sato, Rika; Chailapakult, Orawon

    2005-05-01

    The electrochemical analysis of tetracycline was investigated using nickel-implanted boron-doped diamond thin film electrode by cyclic voltammetry and amperometry with a flow injection system. Cyclic voltammetry was used to study the electrochemical oxidation of tetracycline. Comparison experiments were carried out using as-deposited boron-doped diamond thin film electrode (BDD). Nickel-implanted boron-doped diamond thin film electrode (Ni-DIA) provided well-resolved oxidation irreversible cyclic voltammograms. The current signals were higher than those obtained using the as-deposited BDD electrode. Results using nickel-implanted boron-doped diamond thin film electrode in flow injection system coupled with amperometric detection are presented. The optimum potential for tetracycline was 1.55 V versus Ag/AgCl. The linear range of 1.0 to 100 microM and the detection limit of 10 nM were obtained. In addition, the application for drug formulation was also investigated.

  15. Electrical properties of thin-film structures formed by pulsed laser deposition of Au, Ag, Cu, Pd, Pt, W, Zr metals on n-6H-SiC crystal

    International Nuclear Information System (INIS)

    Diode structures with ideality factors of 1.28-2.14 and potential barriers from 0.58 to 0.62 eV on the semiconductor side were formed by pulsed laser deposition of Au, Ag, Cu, Pd, Pt, W, and Zr metal films on n-6H-SiC crystal without epitaxial layer preparation. A high density of surface acceptor and donor states was formed at the metal-semiconductor interface during deposition of the laser-induced atomic flux, which violated the correlation between the potential barrier height and metal work function. The barrier heights determined from characteristic currents and capacitance measurements were in quite good agreement. For the used low-resistance semiconductor and contact elements, the sizes of majority carrier (electron) depletion regions were determined as 26-60 nm.

  16. Gamma radiation induced effects in floppy and rigid Ge-containing chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ailavajhala, Mahesh S.; Mitkova, Maria [Department of Electrical Engineering, Boise State University, 1910 University Dr. Boise, Idaho 83725-2075 (United States); Gonzalez-Velo, Yago; Barnaby, Hugh; Kozicki, Michael N.; Holbert, Keith [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-9309 (United States); Poweleit, Christian [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Butt, Darryl P. [Department of Material Science and Engineering, Boise State University, 1910 University Dr. Boise, Idaho 83725-2090 (United States)

    2014-01-28

    We explore the radiation induced effects in thin films from the Ge-Se to Ge-Te systems accompanied with silver radiation induced diffusion within these films, emphasizing two distinctive compositional representatives from both systems containing a high concentration of chalcogen or high concentration of Ge. The studies are conducted on blanket chalcogenide films or on device structures containing also a silver source. Data about the electrical conductivity as a function of the radiation dose were collected and discussed based on material characterization analysis. Raman Spectroscopy, X-ray Diffraction Spectroscopy, and Energy Dispersive X-ray Spectroscopy provided us with data about the structure, structural changes occurring as a result of radiation, molecular formations after Ag diffusion into the chalcogenide films, Ag lateral diffusion as a function of radiation and the level of oxidation of the studied films. Analysis of the electrical testing suggests application possibilities of the studied devices for radiation sensing for various conditions.

  17. Thin film bismuth iron oxides useful for piezoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  18. Polycrystalline thin film materials and devices

    Energy Technology Data Exchange (ETDEWEB)

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  19. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  20. When are thin films of metals metallic?

    Science.gov (United States)

    Plummer, E. W.; Dowben, P. A.

    1993-04-01

    There is an increasing body of experimental information suggesting that very thin films of materials, normally considered to be metals, exhibit behavior characteristic of a nonmetal. In almost all cases, there is a nonmetal-to-metal transition as a function of film density or thickness, frequently accompanied by a structural transition. Amazingly, this behavior seems to occur for metal films on metal substrates, as well as for metals on semiconductors. The identification of this phenomena and the subsequent explanation has been slow in developing, due to the inability to directly measure the conductivity of a submonolayer film. This paper will discuss the evidence accumulated from variety of spectroscopic experimental techniques for three systems: a Mott-Hubbard transition, a Peierls-like distortion, and a Wilson transition.

  1. Energetic deposition of thin metal films

    CERN Document Server

    Al-Busaidy, M S K

    2001-01-01

    deposited films. The primary aim of this thesis was to study the physical effect of energetic deposition metal thin films. The secondary aim is to enhance the quality of the films produced to a desired quality. Grazing incidence X-ray reflectivity (GIXR) measurements from a high-energy synchrotron radiation source were carried out to study and characterise the samples. Optical Profilers Interferometery, Atomic Force Microscope (AFM), Auger electron spectroscopy (AES), Medium energy ion spectroscopy (MEIS), and the Electron microscope studies were the other main structural characterisation tools used. AI/Fe trilayers, as well as multilayers were deposited using a Nordico planar D.C. magnetron deposition system at different voltage biases and pressures. The films were calibrated and investigated. The relation between energetic deposition variation and structural properties was intensely researched. Energetic deposition refers to the method in which the deposited species possess higher kinetic energy and impact ...

  2. Laser Direct Writing of Ag Films from Solution on Si Substrate

    Institute of Scientific and Technical Information of China (English)

    Ke SUN; Caibei ZHANG; Yan ZHAO

    2003-01-01

    Pulsed Nd:YAG laser was used to irradiate Si substrate immersed in AgNO3 ethylene glycol solution to deposit Ag films along the lines scanned by laser on the substrate, which is a photo-thermal decomposing process. The decomposed Ag atoms congregate and form polycrystalline Ag particles. The Ag concentration changes greatly with the total laser energy4absorbed by substrate. Transmission electron microscopy (TEM) observation shows the Ag particles are inlaid in the Si substrate. Auger electron spectrum (AES) shows that the Ag concentration decreases with the increase of the sputtering depth, and there is no oxygen element on the surface of the deposited Ag films.

  3. Thin Films for Coating Nanomaterials

    Institute of Scientific and Technical Information of China (English)

    S.M.Mukhopadhyay; P.Joshi; R.V.Pulikollu

    2005-01-01

    For nano-structured solids (those with one or more dimensions in the 1-100 nm range), attempts of surface modification can pose significant and new challenges. In traditional materials, the surface coating could be several hundreds nanometers in thickness, or even microns and millimeters. In a nano-structured material, such as particle or nanofibers, the coating thickness has to be substantially smaller than the bulk dimensions (100 nm or less), yet be durable and effective. In this paper, some aspects of effective nanometer scale coatings have been discussed. These films have been deposited by a non-line of sight (plasma)techniques; and therefore, they are capable of modifying nanofibers, near net shape cellular foams, and other high porosity materials. Two types of coatings will be focused upon: (a) those that make the surface inert and (b) those designed to enhance surface reactivity and bonding. The former has been achieved by forming 1-2 nm layer of -CF2- (and/or CF3) groups on the surface, and the latter by creating a nanolayer of SiO2-type compound. Nucleation and growth studies of the plasma-generated film indicate that they start forming as 2-3 nm high islands that grow laterally, and eventually completely cover the surface with 2-3nm film. Contact angle measurements indicate that these nano-coatings are fully functional even before they have achieved complete coverage of 2-3 nm. They should therefore be applicable to nano-structural solids.This is corroborated by application of these films on vapor grown nanofibers of carbon, and on graphitic foams. Coated and uncoated materials are infiltrated with epoxy matrix to form composites and their microstructure, as well as mechanical behaviors are compared. The results show that the nano-oxide coating can significantly enhance bond formation between carbon and organic phases, thereby enhancing wettability,dispersion, and composite behavior. The fluorocarbon coating, as expected, reduces bond formation, and

  4. Basic thin film processing for high-Tc superconductors

    International Nuclear Information System (INIS)

    Much attention has been paid for the thin films of perovskite-type oxides especially for the thin films of the high-Tc superconducting ceramics. Historically the thin films of the perovskite-type oxides have been studied as a basic research for ferroelectric materials. Thin films of BaTiO3 and PbTiO3 were tried to deposited and there ferroelectricity was evaluated. Recently this kind of perovskite thin films, including PZT (PbTiO3-PbZrO3) and PLZT [(Pb, La) (Zr, T)O3] have been studied in relation to the synthesis of thin film dielectrics, pyroelectrics, piezoelectrics, electro-optic materials, and acousto-optic materials. Thin films of BPB (BaPbO3- BaBiO3) were studied as oxide superconductors. At present the thin films of the rare-earth high-Tc superconductors of LSC (La1-xSrxCuO4) and YBC (YBa2Cu3O7-δ) have been successfully synthesized owing to the previous studies on the ferroelectric thin films of the perovskite- type oxides. Similar to the rare-earth high-Tc superconductors thin films of the rare-earth-free high-Tc superconductors of BSCC (Bi-Sr-Ca-Cu-O)9 and TBCC (Tl- Ba-Ca-Cu-O)10 system have been synthesized. In this section the basic processes for the fabrication of the high- Tc perovskite superconducting thin films are described

  5. Microstructure and Raman spectra of Ag-MgF2 cermet films

    Institute of Scientific and Technical Information of China (English)

    Shouhua Shi(史守华); Zhuoliang Cao(曹卓良); Zhaoqi Sun(孙兆奇)

    2003-01-01

    Ag-MgF2 cermet films with different Ag fractions were prepared by vacuum evaporation. The microstruc-ture of the films was examined by Raman scattering technique. The surface-enhanced Raman spectrumfor MgF2 molecules in the cermet film strongly suggests the existence of Ag nanoparticles dispersed inMgF2 matrix. The intensities of the Raman spectra of Ag-MgF2 cermet films increase with Ag fraction.The enhancement of Raman scattering disappears when Ag content reaches wt.20%. The analyses withthe transmission electron microscopy showed that Ag-MgF2 cermet films are mainly composed of amor-phous MgF2 matrix with embedded faced-center-cubic Ag nanoparticles. It suggests that the percolationthreshold should be around wt.20% of Ag content.

  6. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  7. Improved Resistive Switching Characteristics of Ag-Doped ZrO2 Films Fabricated by Sol-Gel Process

    Institute of Scientific and Technical Information of China (English)

    SUN Bing; LIU Li-Feng; HAN De-Dong; WANG Yi; LIU Xiao-Yan; HAN Ru-Qi; KANG Jin-Feng

    2008-01-01

    Ag-doped and pure ZrO2 thin films are prepared on Pt/Ti/SiO2/Si substrates by sol-gel process for resistive random access memory application. The highly reproducible resistive switching is achieved in the 10% Ag-doped ZrO2 devices. The improved resistive switching behaviour in the Ag doped ZrO2 devices could be attributed to Ag doping effect on the formation of the stable filamentary conducting paths. In addition, dual-step reset processes corresponding to three stable resistance states are observed in the 10% Ag doped ZrO2 devices, which may be implemented for the application of multi-bit storage.

  8. Interaction of acetonitrile with thin films of solid water

    International Nuclear Information System (INIS)

    Thin films of water were prepared on Ag at 124 K. Their properties were studied with metastable impact electron spectroscopy, reflection absorption infrared spectroscopy, and temperature programmed desorption. The interaction of acetonitrile (ACN) with these films was studied with the abovementioned techniques. From the absence of any infrared activity in the initial adsorption stage, it is concluded that ACN adsorbs linearly and that the C≡N axis is aligned parallel to the water surface (as also found on neat Ag). Initially, the interaction with water surface species involves their dangling OD groups. During the completion of the first adlayer the ACN-ACN lateral interaction becomes of importance as well, and the ACN molecules become tilted with respect to the water surface. ACN shows propensity to stay at the surface after surface adsorption even during annealing up to the onset of desorption. The present results for the ACN-water interaction are compared with available classical molecular dynamics calculations providing the orientation profile for ACN on water as well as the ACN bonding properties.

  9. Characterization of AZO and Ag based films prepared by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Dagang [Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong (China); Jiang, Shouxiang, E-mail: kinor.j@polyu.edu.hk [Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong (China); Zhao, Hongmei [Department of Prosthodontics, The Affiliated Hospital of Qingdao University, Qingdao (China); Shang, Songmin; Chen, Zhuoming [Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong (China)

    2014-12-15

    Highlights: • Highly infrared reflective AZO and Ag based films were prepared. • Ag showed better crystallization on AZO film than on glass substrate. • Infrared reflection rate was inversely proportional to the film sheet resistance. • Film with infrared reflection of 97% in FIR region was acquired. - Abstract: Ag, AZO/Ag, Ag/AZO and AZO/Ag/AZO films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technology. The prepared films were systematically investigated by X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), UV–visible spectrophotometer, a four-point probe system and Fourier Transform Infrared Spectroscopy. The results indicated that Ag inner layer starts forming a continuous film at the thickness of 10 nm and Ag layer presents superior crystallization on AZO substrate than that on glass substrate. The continuous Ag inner layer film provided the highest average visible transmittance of 85.4% (AZO/Ag/AZO). The lowest sheet resistance of 3.21 Ω/sq and the highest infrared reflection rate of 97% in FIR region can be obtained on AZO/Ag (15 nm)/AZO film. The high infrared reflection property of the AZO/Ag/AZO coating makes it a promising candidate for solar control films.

  10. INVESTIGATION OF PHOTOELECTROCHROMIC THIN FILM AND DEVICE

    Institute of Scientific and Technical Information of China (English)

    M.J. Chen; H. Shen

    2005-01-01

    Photoelectrochromic device is a combination of dye-sensitized solar cells and electrochromic WO3 layers. Ectrochroelmic WO3 layer and TiO2 layer had been prepared by the sol-gel process, then be assembled to pohotoelectrochromic device. The effects of heating temperature on photoelectrochromic were investigated. The results showed that thin films prepared by dip-coating and spin-coating had good film quality and the device made by the method mentioned in the paper had good photoelectrochromie properties.

  11. Thermoviscoelastic models for polyethylene thin films

    DEFF Research Database (Denmark)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio

    2016-01-01

    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach...... is that the experimentally inaccessible out-of-plane material properties are determined by fitting the model predictions to the measured nonlinear behavior of the film. Creep tests, uniaxial tension tests, and biaxial bubble tests are used to determine the material parameters. The model has been validated experimentally...

  12. Thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  13. Evidence for improvement of critical current by Ag in YBaCuO-Ag thick films

    Science.gov (United States)

    Dwir, B.; Kellett, B.; Mieville, L.; Pavuna, D.

    1991-04-01

    The evidence is reported for enhancement of critical current density J(c) in YBa2Cu3O(7-delta) thick films with the addition of Ag, which is correlated with improvements in structural properties. An improvement of 50 percent in J(c) (up to about 500 A/sq cm at T = 4.2 K) was obtained in films made from YBCO + 60 wt pct Ag powder, fabricated by the spin-on technique on (100) SrTiO3, which is correlated with improvements in structure. The resulting films are 10 microns thick, uniform, partially textured, and show good adherence. The critical temperature Tc is improved by the addition of Ag, and a reduction in the density of microcracks and in the amount of secondary phases in the sintered films was observed. Normal-state resistivity is reduced by almost three orders of magnitude, making these films potentially useful for electronic applications in interconnects and novel hybrid circuits.

  14. Evidence for improvement of critical current by Ag in YBaCuO-Ag thick films

    Energy Technology Data Exchange (ETDEWEB)

    Dwir, B.; Kellett, B.; Mieville, L.; Pavuna, D. (Institute of Micro- and Opto-electronics, Department of Physics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland (CH))

    1991-04-15

    The evidence is reported for enhancement of critical current density {ital J}{sub {ital c}} in YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thick films with the addition of Ag, which is correlated with improvements in structural properties. An improvement of 50% in {ital J}{sub {ital c}} (up to {similar to}500 A/cm{sup 2} at {ital T}=4.2 K) was obtained in films made from YBCO+60wt % Ag powder, fabricated by the spin-on technique on (100) SrTiO{sub 3}, which is correlated with improvements in structure. The resulting films are 10 {mu}m thick, uniform, partially textured, and show good adherence. The critical temperature {ital T}{sub {ital c}} is improved by the addition of Ag, and a reduction in the density of microcracks and in the amount of secondary phases in the sintered films was observed. Normal-state resistivity is reduced by almost three orders of magnitude, making these films potentially useful for electronic applications in interconnects and novel hybrid circuits.

  15. Nitrogen doped zinc oxide thin film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Sonny X.

    2003-12-15

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  16. A Solid Ag Film Deposited from Solution on Self-assembled Mercaptopropyltrimethoxysilane (MPTS) Monolayer

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Mercaptopropyltrimethoxysilane (MPTS) bearing mercapto groups was used to form self-assembly monolayers (SAMs) on glass substrates by solution extraction. SEM, XRD and rubbing test analysis illustrated that the Ag film on the SAMs-modified glass was more durable than that on the commonly-modified glass and that the crystallinity of Ag film on the SAMs-modified glass was identical with those of the Ag film on the commonly-modified glass and pure Ag.

  17. Fabrication of YBCO films on Ag substrate by TFA-MOD method

    Institute of Scientific and Technical Information of China (English)

    刘敏; 董杰; 刘丹敏; 沈金龙; 赵跃; 周美玲

    2004-01-01

    Biaxial aligned YBCO films have been successfully deposited on Ag {110} textured polycrystalline substrates by metal-organic decomposition (MOD) method using Trifluoroacetate Salt (TFA). The influence of firing temperature and Ag surface defects on phase purity and texture, surface morphology of YBCO films was studied. Holding temperature at 900 ℃ for 30 min benefits to improve orientation and connectivity of YBCO films. The surface of YBCO films deposited on unpolished Ag substrate has many holes and stripes, which are parallel to the rolling stripe on Ag substrates. To eliminate the rolling stripe on the Ag surface, Ag substrates were polished prior to films deposition. The film grown on polished Ag substrates has a smooth surface and good connectivity of grains without parallel stripes. The YBCO films have an onset of transition around 90K and critical current densities of 15 000 A/cm2.

  18. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. [ed.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  19. Polycrystalline thin films FY 1992 project report

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K. (ed.)

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  20. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  1. Multiferroic oxide thin films and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Chengliang, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Hu, Weijin; Wu, Tom, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Tian, Yufeng [School of Physics, Shandong University, Jinan 250100 (China)

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  2. EBSD analysis of electroplated magnetite thin films

    Science.gov (United States)

    Koblischka-Veneva, A.; Koblischka, M. R.; Teng, C. L.; Ryan, M. P.; Hartmann, U.; Mücklich, F.

    2010-05-01

    By means of electron backscatter diffraction (EBSD), we analyse the crystallographic orientation of electroplated magnetite thin films on Si/copper substrates. Varying the voltage during the electroplating procedure, the resulting surface properties are differing considerably. While a high voltage produces larger but individual grains on the surface, the surfaces become smoother on decreasing voltage. Good quality Kikuchi patterns could be obtained from all samples; even on individual grains, where the surface and the edges could be measured. The spatial resolution of the EBSD measurement could be increased to about 10 nm; thus enabling a detailed analysis of single magnetite grains. The thin film samples are polycrystalline and do not exhibit a preferred orientation. EBSD reveals that the grain size changes depending on the processing conditions, while the detected misorientation angles stay similar.

  3. Generalized Ellipsometry on Ferromagnetic Sculptured Thin Films.

    Science.gov (United States)

    Schmidt, Daniel; Hofmann, Tino; Mok, Kah; Schmidt, Heidemarie; Skomski, Ralf; Schubert, Eva; Schubert, Mathias

    2011-03-01

    We present and discuss generalized ellipsometry and generalized vector-magneto-optic ellipsometry investigations on cobalt nanostructured thin films with slanted, highly-spatially coherent, columnar arrangement. The samples were prepared by glancing angle deposition. The thin films are highly transparent and reveal strong form-induced birefringence. We observe giant Kerr rotation in the visible spectral region, tunable by choice of the nanostructure geometry. Spatial magnetization orientation hysteresis and magnetization magnitude hysteresis properties are studied using a 3-dimensional Helmholtz coil arrangement allowing for arbitrary magnetic field direction at the sample position for field strengths up to 0.4 Tesla. Analysis of data obtained within this novel vector-magneto-optic setup reveals magnetization anisotropy of the Co slanted nanocolumns supported by mean-field theory modeling.

  4. Thin film sensors for measuring small forces

    OpenAIRE

    F. Schmaljohann; Hagedorn, D.; LÖffler, F.

    2015-01-01

    Especially in the case of measuring small forces, the use of conventional foil strain gauges is limited. The measurement uncertainty rises by force shunts and is due to the polymer foils used, as they are susceptible to moisture. Strain gauges in thin film technology present a potential solution to overcome these effects because of their direct and atomic contact with the measuring body, omitting an adhesive layer and the polymer foil. For force measurements up to 1 N, a...

  5. Surface morphology of thin films polyoxadiazoles

    OpenAIRE

    J. Weszka; M.M. Szindler; M. Chwastek-Ogierman; M. Bruma; P. Jarka; Tomiczek, B.

    2011-01-01

    urpose: The purpose of this paper was to analyse the surface morphology of thin films polyoxadiazoles. Design/methodology/approach: SSix different polymers which belong to the group of polyoxadiazoles were dissolved in the solvent NMP. Each of these polymer was deposited on a glass substrate and a spin coating method was applied with a spin speed of 1000, 2000 and 3000 rev/min. Changes in surface topography and roughness were observed. An atomic force microscope AFM Park System has been used....

  6. Recent developments in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, N.G. (Inst. Militar de Engenharia, Rio de Janeiro, RJ (Brazil))

    1990-12-15

    In recent years, remarkable progress has been made in improving the photovoltaic (PV) conversion efficiencies of thin film solar cells. The best active-area efficiencies (air mass 1.5) of thin film solar cells reported are as follows: polycrystalline CuInSe{sub 2}, 14.1%; CuIn(Ga)Se{sub 2}, 12.9%; CdTe, 12.3%, total area; single-junction hydrogenated amorphous silicon (a-Si:H), 12.0%; multiple-junction a-Si:H, 13.3%; cleaved epitaxial GaAs-Ga{sub 1-x}Al{sub x}As, 21.5%, total area. Laboratory methods for preparing small thin film solar cells are evaporation, closed-space sublimation, closed-space vapor transport, vapor phase epitaxy and metallo-organic chemical vapor deposition, while economic large-area deposition techniques such as sputtering, glow discharge reduction, electrodeposition, spraying and screen printing are being used for module fabrication. The following aperture-area efficiencies have been measured, at the Solar Energy Research Inst., for thin film modules: a-Si:H, 9.8%, 933 cm{sup 2}; CuIn(Ga)Se{sub 2}, 11.1%, 938 cm{sup 2}; CdTe, 7.3%, 838 cm{sup 2}. The instability issue of a-Si:H continues to be a high priority area. It is necessary to improve the open-circuit voltage of CuIn(Ga)Se{sub 2} cells, which do not seem to exhibit any intrinsic degradation mechanisms. With continued progress and increased production, PV modules are likely to become competitive for medium-scale power requirements in the mid-1990s. (orig.).

  7. Amorphous silicon for thin-film transistors

    OpenAIRE

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addressable image sensor arrays, due to a new technology of low-cost, Iow-temperature processing overlarge areas. ... Zie: Abstract

  8. Quantized Nanocrystalline CdTe Thin Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110°C. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.

  9. Ferromagnetic Liquid Thin Films Under Applied Field

    OpenAIRE

    Banerjee, S.; Widom, M.

    1999-01-01

    Theoretical calculations, computer simulations and experiments indicate the possible existence of a ferromagnetic liquid state, although definitive experimental evidence is lacking. Should such a state exist, demagnetization effects would force a nontrivial magnetization texture. Since liquid droplets are deformable, the droplet shape is coupled with the magnetization texture. In a thin-film geometry in zero applied field, the droplet has a circular shape and a rotating magnetization texture ...

  10. Electrochemical Analysis of Conducting Polymer Thin Films

    OpenAIRE

    Bin Wang; Vyas, Ritesh N.

    2010-01-01

    Polyelectrolyte multilayers built via the layer-by-layer (LbL) method has been one of the most promising systems in the field of materials science. Layered structures can be constructed by the adsorption of various polyelectrolyte species onto the surface of a solid or liquid material by means of electrostatic interaction. The thickness of the adsorbed layers can be tuned precisely in the nanometer range. Stable, semiconducting thin films are interesting research subjects. We use a conducting...

  11. Structures for dense, crack free thin films

    Science.gov (United States)

    Jacobson, Craig P.; Visco, Steven J.; De Jonghe, Lutgard C.

    2011-03-08

    The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

  12. Electrical characterization of thin film ferroelectric capacitors

    OpenAIRE

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D; Keur, W.; J. Schmitz; Hueting, R.J.E.

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and ...

  13. Thin-film silicon solar cell technology

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A.V.; Meier, J.; Kroll, U.; Droz, C.; Bailat, J. [University of Neuchatel (Switzerland). Inst. of Microtechnology; Schade, H. [RWE Schott Solar GmbH, Putzbrunn (Germany); Vanecek, M. [Academy of Sciences, Prague (Czech Republic). Inst. of Physics; Vallat Sauvain, E.; Wyrsch, N. [University of Neuchatel (Switzerland). Inst. of Microtechnology; Unaxis SPTec S A, Neuchatel (Switzerland)

    2004-07-01

    This paper describes the use, within p-i-n- and n-i-p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon ({mu}c-Si:H) thin films (layers), both deposited at low temperatures (200{sup o}C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. These properties are linked to the microstructure and hence to the i-layer deposition rate, that in turn, affects throughput in production. The importance of contact and reflection layers in achieving low electrical and optical losses is explained, particularly for the superstrate case. Especially the required properties for the transparent conductive oxide (TCO) need to be well balanced in order to provide, at the same time, for high electrical conductivity (preferably by high electron mobility), low optical absorption and surface texture (for low optical losses and pronounced light trapping). Single-junction amorphous and microcrystalline p-i-n-type solar cells, as fabricated so far, are compared in their key parameters (J{sub sc},FF,V{sub oc}) with the [theoretical] limiting values. Tandem and multijunction cells are introduced; the {mu}c-Si: H/a-Si: H or [micromorph] tandem solar cell concept is explained in detail, and recent results obtained here are listed and commented. Factors governing the mass-production of thin-film silicon modules are determined both by inherent technical reasons, described in detail, and by economic considerations. The cumulative effect of these factors results in distinct efficiency reductions from values of record laboratory cells to statistical averages of production modules. Finally, applications of thin-film silicon PV modules, especially in building-integrated PV (BIPV) are shown. In this context, the energy yields of thin-film silicon modules emerge as a valuable gauge for module performance, and compare very favourably with those of

  14. Fluxoid dynamics in superconducting thin film rings

    OpenAIRE

    Kirtley, J. R.; Tsuei, C. C.; Kogan, V. G.; Clem, J. R.; Raffy, H.; Li, Z. Z.

    2003-01-01

    We have measured the dynamics of individual magnetic fluxoids entering and leaving photolithographically patterned thin film rings of the underdoped high-temperature superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+\\delta}$, using a variable sample temperature scanning SQUID microscope. These results can be qualitatively described using a model in which the fluxoid number changes by thermally activated nucleation of a Pearl vortex in, and transport of the Pearl vortex across, the ring wall.

  15. Analysis on superhydrophobic silver decorated copper Oxide nanostructured thin films for SERS studies.

    Science.gov (United States)

    Jayram, Naidu Dhanpal; Aishwarya, D; Sonia, S; Mangalaraj, D; Kumar, P Suresh; Rao, G Mohan

    2016-09-01

    The present work demonstrates the superhydrophobic and Surface Enhanced Raman Spectroscopy (SERS) active substrate performance of silver coated copper oxide (Ag@CuO) nanostructured thin films prepared by the SILAR process. Super hydrophobic substrates that combine super hydrophobic condensation effect and high enhancement ability of Ag@CuO nanoflowers are investigated for SERS studies. The possible growth mechanism for the formation of nanoflower arrays from nanospindles has been discussed. Morphology and crystallinity of the Ag@CuO thin films are confirmed using FESEM and XRD. The results obtained in the present study indicate that the as-deposited hydrophobic nanospindles structure converts to super hydrophobic nanoflower arrays on annealing at 200°C. The Ag@CuO super hydrophobic nanoflowers thin film based SERS substrates show highly enhanced Raman spectra with an EF value of 2.0×10(7) for (Rhodamine 6G) R6G, allowing a detection limit from a 10(-10)molL(-1) solution. The present study may provide a new perception in fabricating efficient super hydrophobic substrates for SERS, suggesting that the fabricated substrates are promising candidates for trace analysis of R6G dye and are expected to be widely used as highly sensitive SERS active substrates for various toxic dyes in the future. PMID:27294970

  16. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  17. Magnetic degradation of thin film multilayers during ion milling

    Directory of Open Access Journals (Sweden)

    J. C. Read

    2014-04-01

    Full Text Available We present a study of Ar ion milling-induced damage in exchange biased IrMn/CoFe/Ag-based magnetic multilayer thin films. While process variations determine the change in CoFe magnetic properties, the distance from the ion milling front to the IrMn/CoFe interface dominates the extent of exchange bias damage. Remarkably, the interfacial coupling energy Jk can be reduced by 50% before any removal of the CoFe pinned layer. We attribute the losses to microstructural changes and damage effects where cap material is driven into the CoFe layer below. Disturbance depth estimates from ion impact simulations agree reasonably with the observed length scales of damage.

  18. Superconducting properties of iron chalcogenide thin films

    Directory of Open Access Journals (Sweden)

    Paolo Mele

    2012-01-01

    Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

  19. Thin film cadmium telluride photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  20. Supramolecular structure of electroactive polymer thin films

    Science.gov (United States)

    Kornilov, V. M.; Lachinov, A. N.; Karamov, D. D.; Nabiullin, I. R.; Kul'velis, Yu. V.

    2016-05-01

    This paper presents the results of an experimental investigation of the supramolecular structure of polydiphenylenephthalide thin films that exhibit effects of resistive switching. The supramolecular structure of the polymer has been investigated using small-angle neutron scattering in conjunction with atomic force microscopy. It has been found that the internal structure of polymer films consists of structural elements in the form of spheroids. The sizes of the structural elements, which were obtained from the neutron scattering data and analysis of the atomic force microscopy images, correlate well with each other. A model of the formation of polymer layers has been proposed. The observed structural elements in polymer films are formed due to the association of macromolecules in the initial polymer solution.

  1. Electrical resistivity of thin metal films

    CERN Document Server

    Wissmann, Peter

    2007-01-01

    The aim of the book is to give an actual survey on the resistivity of thin metal and semiconductor films interacting with gases. We discuss the influence of the substrate material and the annealing treatment of the films, presenting our experimental data as well as theoretical models to calculate the scattering cross section of the conduction electrons in the frame-work of the scattering hypothesis. Main emphasis is laid on the comparison of gold and silver films which exhibit nearly the same lattice structure but differ in their chemical activity. In conclusion, the most important quantity for the interpretation is the surface charging z while the correlation with the optical data or the frustrated IR vibrations seems the show a more material-specific character. Z can be calculated on the basis of the density functional formalism or the self-consistent field approximation using Mulliken’s population analysis.

  2. Irradiation effects in YBCO thin films

    International Nuclear Information System (INIS)

    Oxide superconductors are very sensitive to electron or ion beam irradiation/implantation. In the past 19 years after high-Tc (HTc) superconductivity was discovered in these materials, many aspects of interactions of accelerated particles with HTc thin films were investigated. In this paper short review of most significant phenomena is given, especially of those important for electronic applications (controllable reduction of critical temperature and critical current density) and their applications for HTc film patterning, fabrication of HTc Josephson junctions and SQUIDs. Some new results in creating 3-d inhomogeneous regions in YBCO superconductors by ion irradiation/implantation and investigation of high harmonic generation in YBCO film modified by 100 keV oxygen ions are presented. (author)

  3. Sulfated cellulose thin films with antithrombin affinity

    Directory of Open Access Journals (Sweden)

    2009-11-01

    Full Text Available Cellulose thin films were chemically modified by in situ sulfation to produce surfaces with anticoagulant characteristics. Two celluloses differing in their degree of polymerization (DP: CEL I (DP 215–240 and CEL II (DP 1300–1400 were tethered to maleic anhydride copolymer (MA layers and subsequently exposed to SO3•NMe3 solutions at elevated temperature. The impact of the resulting sulfation on the physicochemical properties of the cellulose films was investigated with respect to film thickness, atomic composition, wettability and roughness. The sulfation was optimized to gain a maximal surface concentration of sulfate groups. The scavenging of antithrombin (AT by the surfaces was determined to conclude on their potential anticoagulant properties.

  4. Magnetization relaxation in sputtered thin permalloy films

    Science.gov (United States)

    Oliveira, R. C.; Rodríguez-Suárez, R. L.; Aguiar, F. M. De; Rezende, S. M.; Fermin, J. R.; Azevedo, A.

    2004-05-01

    In order to understand the underlying phenomena of magnetization damping in metallic thin films, samples of permalloy films were grown by magnetron sputtering, and their 8.6-GHz ferromagnetic resonance linewidth ΔH has been measured as a function of the Permalloy (Py) film thickness t, at room temperature. We made samples of Py(t)/Si(001) and X/Py(t)/X/Si(001), with X=Pd (40Å), and Cr (25Å), with 20Å < t < 200Å. While ΔH scales with t-2 in the bare Py/Si series, it is shown that the damping behavior strongly depends on X in the sandwich samples.

  5. Nanocrystalline silicon based thin film solar cells

    Science.gov (United States)

    Ray, Swati

    2012-06-01

    Amorphous silicon solar cells and panels on glass and flexible substrate are commercially available. Since last few years nanocrystalline silicon thin film has attracted remarkable attention due to its stability under light and ability to absorb longer wavelength portion of solar spectrum. For amorphous silicon/ nanocrystalline silicon double junction solar cell 14.7% efficiency has been achieved in small area and 13.5% for large area modules internationally. The device quality nanocrystalline silicon films have been fabricated by RF and VHF PECVD methods at IACS. Detailed characterizations of the materials have been done. Nanocrystalline films with low defect density and high stability have been developed and used as absorber layer of solar cells.

  6. Antibacterial property of Ag nanoparticle-impregnated N-doped titania films under visible light

    Science.gov (United States)

    Wong, Ming-Show; Chen, Chun-Wei; Hsieh, Chia-Chun; Hung, Shih-Che; Sun, Der-Shan; Chang, Hsin-Hou

    2015-07-01

    Photocatalysts produce free radicals upon receiving light energy; thus, they possess antibacterial properties. Silver (Ag) is an antibacterial material that disrupts bacterial physiology. Our previous study reported that the high antibacterial property of silver nanoparticles on the surfaces of visible light-responsive nitrogen-doped TiO2 photocatalysts [TiO2(N)] could be further enhanced by visible light illumination. However, the major limitation of this Ag-TiO2 composite material is its durability; the antibacterial property decreased markedly after repeated use. To overcome this limitation, we developed TiO2(N)/Ag/TiO2(N) sandwich films in which the silver is embedded between two TiO2(N) layers. Various characteristics, including silver and nitrogen amounts, were examined in the composite materials. Various analyses, including electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and ultraviolet-visible absorption spectrum and methylene blue degradation rate analyses, were performed. The antibacterial properties of the composite materials were investigated. Here we revealed that the antibacterial durability of these thin films is substantially improved in both the dark and visible light, by which bacteria, such as Escherichia coli, Streptococcus pyogenes, Staphylococcus aureus, and Acinetobacter baumannii, could be efficiently eliminated. This study demonstrated a feasible approach to improve the visible-light responsiveness and durability of antibacterial materials that contain silver nanoparticles impregnated in TiO2(N) films.

  7. Preparation and properties of antimony thin film anode materials

    Institute of Scientific and Technical Information of China (English)

    SU Shufa; CAO Gaoshao; ZHAO Xinbing

    2004-01-01

    Metallic antimony thin films were deposited by magnetron sputtering and electrodeposition. Electrochemical properties of the thin film as anode materials for lithium-ion batteries were investigated and compared with those of antimony powder. It was found that both magnetron sputtering and electrodeposition are easily controllable processes to deposit antimony films with fiat charge/discharge potential plateaus. The electrochemical performances of antimony thin films, especially those prepared with magnetron sputtering, are better than those of antimony powder. The reversible capacities of the magnetron sputtered antimony thin film are above 400 mA h g-1 in the first 15 cycles.

  8. Preface: Thin films of molecular organic materials

    Science.gov (United States)

    Fraxedas, J.

    2008-03-01

    This special issue is devoted to thin films of molecular organic materials and its aim is to assemble numerous different aspects of this topic in order to reach a wide scientific audience. Under the term 'thin films', structures with thicknesses spanning from one monolayer or less up to several micrometers are included. In order to narrow down this relaxed definition (how thin is thin?) I suggest joining the stream that makes a distinction according to the length scale involved, separating nanometer-thick films from micrometer-thick films. While the physical properties of micrometer-thick films tend to mimic those of bulk materials, in the low nanometer regime new structures (e.g., crystallographic and substrate-induced phases) and properties are found. However, one has to bear in mind that some properties of micrometer-thick films are really confined to the film/substrate interface (e.g. charge injection), and are thus of nanometer nature. Supported in this dimensionality framework, this issue covers the most ideal and model 0D case, a single molecule on a surface, through to the more application-oriented 3D case, placing special emphasis on the fascinating 2D domain that is monolayer assembly. Thus, many aspects will be reviewed, such as single molecules, self-organization, monolayer regime, chirality, growth, physical properties and applications. This issue has been intentionally restricted to small molecules, thus leaving out polymers and biomolecules, because for small molecules it is easier to establish structure--property relationships. Traditionally, the preparation of thin films of molecular organic materials has been considered as a secondary, lower-ranked part of the more general field of this class of materials. The coating of diverse surfaces such as silicon, inorganic and organic single crystals, chemically modified substrates, polymers, etc., with interesting molecules was driven by the potential applications of such molecular materials

  9. Resistive switching in TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lin

    2011-10-26

    The continuing improved performance of the digital electronic devices requires new memory technologies which should be inexpensively fabricated for higher integration capacity, faster operation, and low power consumption. Resistive random access memory has great potential to become the front runner as the non volatile memory technology. The resistance states stored in such cell can remain for long time and can be read out none-destructively by a very small electrical pulse. In this work the typically two terminal memory cells containing a thin TiO{sub 2} layer are studied. Polycrystalline TiO{sub 2} thin films are deposited with atomic layer deposition and magnetron reactive sputtering processes, which are both physically and electrically characterized. The resistive switching cells are constructed in a metal/TiO{sub 2}/metal structure. Electroforming process initiate the cell from the beginning good insulator to a real memory cell to program the resistive states. Multilevel resistive bipolar switching controlled by current compliance is the common characteristic observed in these cells, which is potentially to be used as so called multi-bit memory cells to improve the memory capacity. With different top electrodes of Pt, Cu, Ag the resistive switching behaviors are studied. The switching behaviors are different depending on the top metal such as the minimum current compliance, the endurance of the programmed resistance states and the morphology change during the switching. The temperature dependence of different resistance states are investigated. A reduction of the activation energy and their possible conduction mechanisms is discussed on the base of the basic current conduction models. It is found that the resistance state transfers from semiconductor to metallic property with the reducing resistances. The calculated temperature coefficients of their metallic states on the Cu/TiO{sub 2}/Pt and Ag/TiO{sub 2}/Pt are very close to the reported literature data

  10. Modification of magnetic anisotropy induced by swift heavy ion irradiation in cobalt ferrite thin films

    International Nuclear Information System (INIS)

    The present study demonstrates the modification of magnetic anisotropy in cobalt ferrite (CoFe2O4) thin films induced by swift heavy ion irradiations of 200 MeV Ag-ion beams. The study reveals that both magnetizations and coercive field are sensitive to Ag-ions irradiation and to the fluences. The magnetic anisotropy enhanced at low fluence of Ag-ions due to domain wall pinning at defect sites created by ion bombardment and at high fluence, this magnetic anisotropy ceases and changes to isotropic behavior which is explained based on the significant structural and morphological changes. An X-ray absorption and x-ray magnetic circular dichroism studies confirms the inverse spinel structure of these compounds. - Highlights: • CoFe2O4 thin films have been deposited on Silicon substrate by pulsed laser deposition technique. • Swift heavy ion irradiation of thin films at three different fluences. • Studied the structural and magnetic properties of the samples. • XRD and Raman studies indicate strain in the films. • Observed perpendicular magnetic anisotropy

  11. Modification of magnetic anisotropy induced by swift heavy ion irradiation in cobalt ferrite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nongjai, Razia [Department of Applied Physics, Zakir Hussain College of Engineering & Technology, A.M.U., Aligarh 202002 (India); Khan, Shakeel, E-mail: skhanapad@gmail.com [Department of Applied Physics, Zakir Hussain College of Engineering & Technology, A.M.U., Aligarh 202002 (India); Ahmed, Hilal; Khan, Imran [Department of Applied Physics, Zakir Hussain College of Engineering & Technology, A.M.U., Aligarh 202002 (India); Annapoorni, S. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Gautam, Sanjeev [Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Lin, Hong-Ji; Chang, Fan-Hsiu [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Hwa Chae, Keun [Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Asokan, K. [Material Science Division, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2015-11-15

    The present study demonstrates the modification of magnetic anisotropy in cobalt ferrite (CoFe{sub 2}O{sub 4}) thin films induced by swift heavy ion irradiations of 200 MeV Ag-ion beams. The study reveals that both magnetizations and coercive field are sensitive to Ag-ions irradiation and to the fluences. The magnetic anisotropy enhanced at low fluence of Ag-ions due to domain wall pinning at defect sites created by ion bombardment and at high fluence, this magnetic anisotropy ceases and changes to isotropic behavior which is explained based on the significant structural and morphological changes. An X-ray absorption and x-ray magnetic circular dichroism studies confirms the inverse spinel structure of these compounds. - Highlights: • CoFe{sub 2}O{sub 4} thin films have been deposited on Silicon substrate by pulsed laser deposition technique. • Swift heavy ion irradiation of thin films at three different fluences. • Studied the structural and magnetic properties of the samples. • XRD and Raman studies indicate strain in the films. • Observed perpendicular magnetic anisotropy.

  12. Fractal structure formation from Ag nanoparticle films on insulating substrates.

    Science.gov (United States)

    Tang, Jing; Li, Zhiyong; Xia, Qiangfei; Williams, R Stanley

    2009-07-01

    Two dimensional (2D) fractal structures were observed to form from fairly uniform Ag island films (equivalent mass thicknesses of 1.5 and 5 nm) on insulating silicon dioxide surfaces (thermally grown silicon oxide on Si or quartz) upon immersion in deionized water. This result is distinctly different from the previously observed three-dimensional (3D) growth of faceted Ag nanocrystals on conductive surfaces (ITO and graphite) as the result of an electrochemical Ostwald ripening process, which also occurs on native oxide covered silicon surfaces as reported here. The fractal structures formed by diffusion-limited aggregation (DLA) of Ag species on the insulating surfaces. We present the experimental observation of this phenomenon and discuss some possible mechanisms for the DLA formation. PMID:19496573

  13. Effects of alkali treatments on Ag nanowire transparent conductive films

    Science.gov (United States)

    Kim, Sunho; Kang, Jun-gu; Eom, Tae-yil; Moon, Bongjin; Lee, Hoo-Jeong

    2016-06-01

    In this study, we employ various alkali materials (alkali metals with different base strengths, and ammonia gas and solution) to improve the conductivity of silver nanowire (Ag NW)-networked films. The alkali treatment appears to remove the surface oxide and improve the conductivity. When applied with TiO2 nanoparticles, the treatment appears more effective as the alkalis gather around wire junctions and help them weld to each other via heat emitted from the reduction reaction. The ammonia solution treatment is found to be quick and aggressive, damaging the wires severely in the case of excessive treatment. On the other hand, the ammonia gas treatment seems much less aggressive and does not damage the wires even after a long exposure. The results of this study highlight the effectiveness of the alkali treatment in improving of the conductivity of Ag NW-networked transparent conductive films.

  14. Cerium Dioxide Thin Films Using Spin Coating

    Directory of Open Access Journals (Sweden)

    D. Channei

    2013-01-01

    Full Text Available Cerium dioxide (CeO2 thin films with varying Ce concentrations (0.1 to 0.9 M, metal basis were deposited on soda-lime-silica glass substrates using spin coating. It was found that all films exhibited the cubic fluorite structure after annealing at 500°C for 5 h. The laser Raman microspectroscopy and GAXRD analyses revealed that increasing concentrations of Ce resulted in an increase in the degree of crystallinity. FIB and FESEM images confirmed the laser Raman and GAXRD analyses results owing to the predicted increase in film thickness with increasing Ce concentration. However, porosity and shrinkage (drying cracking of the films also increased significantly with increasing Ce concentrations. UV-VIS spectrophotometry data showed that the transmission of the films decreased with increasing Ce concentrations due to the increasing crack formation. Furthermore, a red shift was observed with increasing Ce concentrations, which resulted in a decrease in the optical indirect band gap.

  15. Biocompatibility evaluation of sputtered zirconium-based thin film metallic glass-coated steels

    Directory of Open Access Journals (Sweden)

    Subramanian B

    2015-10-01

    Full Text Available Balasubramanian Subramanian,1 Sundaram Maruthamuthu,2 Senthilperumal Thanka Rajan1 1Electrochemical Material Science Division, 2Corrosion and Materials Protection Division, Central Electrochemical Research Institute, Karaikudi, India Abstract: Thin film metallic glasses comprised of Zr48Cu36Al8Ag8 (at.% of approximately 1.5 µm and 3 µm in thickness were prepared using magnetron sputtering onto medical grade 316L stainless steel. Their structural and mechanical properties, in vitro corrosion, and antimicrobial activity were analyzed. The amorphous thin film metallic glasses consisted of a single glassy phase, with an absence of any detectable peaks corresponding to crystalline phases. Elemental composition close to the target alloy was noted from EDAX analysis of the thin film. The surface morphology of the film showed a smooth surface on scanning electron microscopy and atomic force microscopy. In vitro electrochemical corrosion studies indicated that the zirconium-based metallic glass could withstand body fluid, showing superior resistance to corrosion and electrochemical stability. Interactions between the coated surface and bacteria were investigated by agar diffusion, solution suspension, and wet interfacial contact methods. The results indicated a clear zone of inhibition against the growth of microorganisms such as Escherichia coli and Staphylococcus aureus, confirming the antimicrobial activity of the thin film metallic glasses. Cytotoxicity studies using L929 fibroblast cells showed these coatings to be noncytotoxic in nature. Keywords: thin film metallic glasses, sputtering, biocompatibility, corrosion, antimicrobial activity

  16. Optical and electrical studies of ZnO thin films heavily implanted with silver ions

    International Nuclear Information System (INIS)

    Thin films of zinc oxide (ZnO) with the thickness of 200 nm have been deposited on quartz substrates by using ion-beam sputtering technique. Then Ag+ ions with the energy of 30 keV have been implanted into as-deposited ZnO films to the fluences in the range of (0.25-1.00)×1017 ions/cm2 to form ZnO:Ag composite layers with different concentrations of the silver impurity. The analysis of the microstructure has shown that the thickness of the ZnO film decreases, and the Ag dopant concentration tends to the saturation with increasing Ag implantation fluence. The ZnO:Ag composite layers reveal the optical selective absorption at the wavelength of the surface plasmon resonance that is typical for silver nanoparticles dispersed in the ZnO matrix. The red shift of the plasmon resonance peak from 480 to 500 nm is observed with the increase in the implantation fluence to 0.75×1017 Ag ions/cm2. Then the absorption peak position starts the backward motion, and the absorption intensity decreases with the subsequent increase in the implantation fluence. The non-monotonic dependence of the absorption peak position on the implantation fluence has been analyzed within of Maxwell Garnet theory and taking into account the strong sputtering of ZnO films during implantation. The ZnO:Ag composite layers exhibit the p-type conductivity indicating that a part of Ag+ ions is in the form of acceptor impurities implanted into the ZnO lattice

  17. Preparation of bismuth telluride thin film by electrochemical atomic layer epitaxy(ECALE)

    Institute of Scientific and Technical Information of China (English)

    ZHU Wen; YANG Junyou; GAO Xianhui; HOU Jie; BAO Siqian; FAN Xian

    2007-01-01

    Thin-layer electrochemical studies of the underpotential deposition(UPD)of Bi and Te on cold rolled silver substrate have been performed.The voltammetric analysis of underpotential shift demonstrates that the initial Te UPD on Bi-covered Ag and Bi UPD on Te-covered Ag fitted UPD dynamics mechanism.A thin film of bismuth telluride was formed by alternately depositing Te and Bi via an automated flow deposition system.X-ray diffraction indicated the deposits of Bi2Te3.Energy Dispersive X-ray Detector quantitative analysis gave a 2:3 stoichiornetric ratio of Bi to Te,which was consistent with X-ray Diffraction results.Electron probe microanalysis of the deposits showed a network structure that results from the surface defects of the cold rolled Ag substrate and the lattice mismatch between substrate and deposit.

  18. Investigating the interfacial dynamics of thin films

    Science.gov (United States)

    Rosenbaum, Aaron W.

    This thesis probes the interfacial dynamics and associated phenomena of thin films. Surface specific tools were used to study the self-assembly of alkanethiols, the mono- and bilayer dynamics of SF6, and the surface motion of poly(methyl methacrylate). Non-pertubative helium atom scattering was the principal technique used to investigate these systems. A variety of other complementary tools, including scanning tunneling microscopy, electron diffraction, Auger spectroscopy, atomic force microscopy, and ellipsometry were used in tandem with the neutral atom scattering studies. Controlling the spontaneous assembly of alkanethiols on Au(111) requires a better fundamental understanding of the adsorbate-adsorbate and substrate-adsorbate interactions. Our characterization focused on two key components, the surface structure and adsorbate vibrations. The study indicates that the Au(111) reconstruction plays a larger role than anticipated in the low-density phase of alkanethiol monolayers. A new structure is proposed for the 1-decanethiol monolayer that impacts the low-energy vibrational mode. Varying the alkane chain lengths imparts insight into the assembly process via characterization of a dispersionless phonon mode. Studies of SF6 physisorbed on Au(111) bridge surface research on rare gas adsorbates with complicated dynamical organic thin films. Mono- and bilayer coverages of SF6/Au(111) were studied at cryogenic temperatures. Our experiments probed the surface properties of SF6 yielding insights into substrate and coverage effects. The study discovered a dispersionless Einstein oscillation with multiple harmonic overtones. A second layer of SF6 softened the mode, but did not show any indications of bulk or cooperative interactions. The vibrational properties of SF 6 showed both striking similarities and differences when compared with physisorbed rare gases. Lastly, this thesis will discuss studies of thin film poly(methyl methacrylate) on Si. The non-pertubative and

  19. Theoretical investigation of the thermodynamic properties of metallic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Vu Van [Vietnam Education Publishing House, 81 Tran Hung Dao, Hanoi (Viet Nam); Phuong, Duong Dai [Hanoi National University of Education, 136 Xuan Thuy, Hanoi (Viet Nam); Hoa, Nguyen Thi [University of Transport and Communications, Lang Thuong, Dong Da, Hanoi (Viet Nam); Hieu, Ho Khac, E-mail: hieuhk@duytan.edu.vn [Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang (Viet Nam)

    2015-05-29

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks.

  20. Theoretical investigation of the thermodynamic properties of metallic thin films

    International Nuclear Information System (INIS)

    The thermodynamic properties of metallic thin films with face-centered cubic structure at ambient conditions were investigated using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The analytical expressions of Helmholtz free energy, lattice parameter, linear thermal expansion coefficient, specific heats at the constant volume and constant pressure were derived in terms of the power moments of the atomic displacements. Numerical calculations of thermodynamic properties have been performed for Au and Al thin films and compared with those of bulk metals. This research proposes that thermodynamic quantities of thin films approach the values of bulk when the thickness of thin film is about 70 nm. - Highlights: • Thermodynamic properties of thin films were investigated using the moment method. • Expressions of Helmholtz energy, expansion coefficient, specific heats were derived. • Calculations for Au, Al thin films were performed and compared with those of bulks

  1. Thin-liquid-film evaporation at contact line

    Institute of Scientific and Technical Information of China (English)

    Hao WANG; Zhenai PAN; Zhao CHEN

    2009-01-01

    When a liquid wets a solid wall, the extended meniscus near the contact line may be divided into three regions: a nonevaporating region, where the liquid is adsorbed on the wall; a transition region or thin-film region, where effects of long-range molecular forces (disjoining pressure) are felt; and an intrinsic meniscus region, where capillary forces dominate. The thin liquid film, with thickness from nanometers up to micrometers, covering the transition region and part of intrinsic meniscus, is gaining interest due to its high heat transfer rates. In this paper, a review was made of the researches on thin-liquid-film evaporation. The major characteristics of thin film, thin-film modeling based on continuum theory, simulations based on molecular dynamics, and thin-film profile and temperature measurements were summarized.

  2. Metallic Thin-Film Bonding and Alloy Generation

    Science.gov (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  3. Pulsed laser deposition of pepsin thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kecskemeti, G. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary)]. E-mail: kega@physx.u-szeged.hu; Kresz, N. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dom ter 9 (Hungary); Smausz, T. [Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dom ter 9 (Hungary); Hopp, B. [Hungarian Academy of Sciences and University of Szeged, Research Group on Laser Physics, H-6720 Szeged, Dom ter 9 (Hungary); Nogradi, A. [Department of Ophthalmology, University of Szeged, H-6720, Szeged, Koranyi fasor 10-11 (Hungary)

    2005-07-15

    Pulsed laser deposition (PLD) of organic and biological thin films has been extensively studied due to its importance in medical applications among others. Our investigations and results on PLD of a digestion catalyzing enzyme, pepsin, are presented. Targets pressed from pepsin powder were ablated with pulses of an ArF excimer laser ({lambda} = 193 nm, FWHM = 30 ns), the applied fluence was varied between 0.24 and 5.1 J/cm{sup 2}. The pressure in the PLD chamber was 2.7 x 10{sup -3} Pa. The thin layers were deposited onto glass and KBr substrates. Our IR spectroscopic measurements proved that the chemical composition of deposited thin films is similar to that of the target material deposited at 0.5 and 1.3 J/cm{sup 2}. The protein digesting capacity of the transferred pepsin was tested by adapting a modified 'protein cube' method. Dissolution of the ovalbumin sections proved that the deposited layers consisted of catalytically active pepsin.

  4. Formation and properties of hyaluronan/nano Ag and hyaluronan-lecithin/nano Ag films.

    Science.gov (United States)

    Khachatryan, Gohar; Khachatryan, Karen; Grzyb, Jacek; Fiedorowicz, Maciej

    2016-10-20

    A facile and environmentally friendly method of the preparation of silver nanoparticles embedded in hyaluronan (Hyal/Ag) and hyaluronan-lecithin (Hyal-L/Ag) matrix was developed. Thin, elastic foils were prepared from gels by an in situ synthesis of Ag in an aqueous solution of sodium hyaluronate (Hyal), using aq. d-(+)-xylose solution as a reducing agent. The gels were applied to a clean, smooth, defatted Teflon surface and left for drying in the air. The dry foils were stored in a closed container. UV-vis spectroscopy, transmission electron microscopy (TEM) and Fourier transform infrared (FTIR) spectra confirmed formation of about 10nm ball-shaped Ag nanoparticles situated within the polysaccharide template. Thermal properties of the composites were characterized involving differential scanning calorimetry (DSC) and thermogravimetric (TGA) analyses, whereas molecular weights of polysaccharide chains of the matrix were estimated with the size exclusion chromatography coupled with multiangle laser light scattering and refractometric detectors (HPSEC-MALLS-RI). An increase in the molecular weight of the hyaluronate after generation of Ag nanoparticles was observed. The foils showed specific properties. The study confirmed that silver nanoparticles can be successfully prepared with environmentally friendly method, using hyaluronan as a stabilizing template. Hyaluronan and hyaluronan-lecithin matrices provide nanocrystals uniform in size and shape. The composites demonstrated a bacteriostatic activity. PMID:27474588

  5. Orthogonal Thin Film Photovoltaics on Vertical Nanostructures.

    Science.gov (United States)

    Ahnood, Arman; Zhou, H; Suzuki, Y; Sliz, R; Fabritius, T; Nathan, Arokia; Amaratunga, G A J

    2015-12-01

    Decoupling paths of carrier collection and illumination within photovoltaic devices is one promising approach for improving their efficiency by simultaneously increasing light absorption and carrier collection efficiency. Orthogonal photovoltaic devices are core-shell type structures consisting of thin film photovoltaic stack on vertical nanopillar scaffolds. These types of devices allow charge collection to take place in the radial direction, perpendicular to the path of light in the vertical direction. This approach addresses the inherently high recombination rate of disordered thin films, by allowing semiconductor films with minimal thicknesses to be used in photovoltaic devices, without performance degradation associated with incomplete light absorption. This work considers effects which influence the performance of orthogonal photovoltaic devices. Illumination non-uniformity as light travels across the depth of the pillars, electric field enhancement due to the nanoscale size and shape of the pillars, and series resistance due to the additional surface structure created through the use of pillars are considered. All of these effects influence the operation of orthogonal solar cells and should be considered in the design of vertically nanostructured orthogonal photovoltaics.

  6. Nanomechanics of Ferroelectric Thin Films and Heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yulan; Hu, Shenyang Y.; Chen , L.Q.

    2016-08-31

    The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability, domain structure, and material ferroelectric properties using the phase-field method. The chapter starts from a brief introduction of ferroelectrics and the Landau-Devinshire description of ferroelectric transitions and ferroelectric phases in a homogeneous ferroelectric single crystal. Due to the fact that ferroelectric transitions involve crystal structure change and domain formation, strains and stresses can be produced inside of the material if a ferroelectric transition occurs and it is confined. These strains and stresses affect in turn the domain structure and material ferroelectric properties. Therefore, ferroelectrics and strains/stresses are coupled to each other. The ferroelectric-mechanical coupling can be used to engineer the material ferroelectric properties by designing the phase and structure. The followed section elucidates calculations of the strains/stresses and elastic energy in a thin film containing a single domain, twinned domains to complicated multidomains constrained by its underlying substrate. Furthermore, a phase field model for predicting ferroelectric stable phases and domain structure in a thin film is presented. Examples of using substrate constraint and temperature to obtain interested ferroelectric domain structures in BaTiO3 films are demonstrated b phase field simulations.

  7. Stripe glasses in ferromagnetic thin films

    Science.gov (United States)

    Principi, Alessandro; Katsnelson, Mikhail I.

    2016-02-01

    Domain walls in magnetic multilayered systems can exhibit a very complex and fascinating behavior. For example, the magnetization of thin films of hard magnetic materials is in general perpendicular to the thin-film plane, thanks to the strong out-of-plane anisotropy, but its direction changes periodically, forming an alternating spin-up and spin-down stripe pattern. The latter is stabilized by the competition between the ferromagnetic coupling and dipole-dipole interactions, and disappears when a moderate in-plane magnetic field is applied. It has been suggested that such a behavior may be understood in terms of a self-induced stripe glassiness. In this paper we show that such a scenario is compatible with the experimental findings. The strong out-of-plane magnetic anisotropy of the film is found to be beneficial for the formation of both stripe-ordered and glassy phases. At zero magnetic field the system can form a glass only in a narrow interval of fairly large temperatures. An in-plane magnetic field, however, shifts the glass transition towards lower temperatures, therefore enabling it at or below room temperature. In good qualitative agreement with the experimental findings, we show that a moderate in-plane magnetic field of the order of 50 mT can lead to the formation of defects in the stripe pattern, which sets the onset of the glass transition.

  8. Memristive switching in vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Buerger, Danilo; John, Varun; Kovacs, Gyoergy; Skorupa, Ilona; Helm, Manfred; Schmidt, Heidemarie [Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany)

    2011-07-01

    Memristive devices exhibit an improved performance at ultra-small scales. The microscopic model for memristive behavior in oxide nanostructures often depends on the distribution of oxygen vacancies and is determined by the cation species. In 2008 HP presented the first bipolar TiO2-based memristor for resistive applications, where the drift of oxygen vacancies causes a change in the resistance of ultrathin TiO2 films which can be locally modified by ion implantation. We prepared vanadium dioxide (VO2) thin films with the reversible metal-insulator phase transition at the thermochromic switching temperature of around 340 K by pulsed laser deposition on (0001)-sapphire substrates and analyzed the electric-pulse-induced thermochromic switching in the VO2 gap region at room temperature due to local heating. As a result, we find the typical pinched hysteresis loop of a memristor, a repeatable switching behavior for billions of voltage pulses and switching times shorter than 50 ns in VO2 thin films.

  9. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1986-08-01

    The major objective of this work was to demonstrate CdTe devices grown by chemical vapor deposition (CVD) with a total area greater than 1 cm2 and photovoltic efficiencies of at least 13%. During the period covered, various processing steps were investigated for the preparation of thin-film CdTe heterojunction solar cells of the inverted configuration. Glass coated with fluorine-doped tin oxide was used as the substrate. Thin-film heterojunction solar cells were prepared by depositing p-CdTe films on substrates using CVD and close-spaced sublimation (CSS). Cells prepared from CSS CdTe usually have a higher conversion efficiency than those prepared from CVD CdTe, presumably due to the chemical interaction between CdS and CdTe at the interface during the CVD process. The best cell, about 1.2 sq cm in area, had an AM 1.5 (global) efficiency of 10.5%, and further improvements are expected by optimizing the process parameters.

  10. Overview and Challenges of Thin Film Solar Electric Technologies

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  11. Networking Behavior in Thin Film and Nanostructure Growth Dynamics

    OpenAIRE

    Yuksel, Murat; Karabacak, Tansel; Guclu, Hasan

    2007-01-01

    Thin film coatings have been essential in development of several micro and nano-scale devices. To realize thin film coatings various deposition techniques are employed, each yielding surface morphologies with different characteristics of interest. Therefore, understanding and control of the surface growth is of great interest. In this paper, we devise a novel network-based modeling of the growth dynamics of such thin films and nano-structures. We specifically map dynamic steps taking place du...

  12. Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Yeon; Lee, Jeong Soo

    2008-02-15

    This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

  13. Metal/Diamond Composite Thin-Film Electrodes: New Carbon Supported Catalytic Electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Greg M. Swain, PI

    2009-03-10

    The DOE-funded research conducted by the Swain group was focused on (i) understanding structure-function relationships at boron-doped diamond thin-film electrodes, (ii) understanding metal phase formation on diamond thin films and developing electrochemical approaches for producing highly dispersed electrocatalyst particles (e.g., Pt) of small nominal particle size, (iii) studying the electrochemical activity of the electrocatalytic electrodes for hydrogen oxidation and oxygen reduction and (iv) conducting the initial synthesis of high surface area diamond powders and evaluating their electrical and electrochemical properties when mixed with a Teflon binder. (Note: All potentials are reported versus Ag/AgCl (sat'd KCl) and cm{sup 2} refers to the electrode geometric area, unless otherwise stated).

  14. Structural and Optical Properties of Chemical Bath Deposited Silver Oxide Thin Films: Role of Deposition Time

    Directory of Open Access Journals (Sweden)

    A. C. Nwanya

    2013-01-01

    Full Text Available Silver oxide thin films were deposited on glass substrates at a temperature of 50°C by chemical bath deposition technique under different deposition times using pure AgNO3 precursor and triethanolamine as the complexing agent. The chemical analysis based on EDX technique shows the presence of Ag and O at the appropriate energy levels. The morphological features obtained from SEM showed that the AgxO structures varied as the deposition time changes. The X-ray diffraction showed the peaks of Ag2O and AgO in the structure. The direct band gap and the refractive index increased as the deposition time increased and was in the range of 1.64–1.95 eV and 1.02–2.07, respectively. The values of the band gap and refractive index obtained indicate possible applications in photovoltaic and photothermal systems.

  15. Study on deposition technique and properties of Pd/Ag alloy film sensor supported on ceramic substrate

    Science.gov (United States)

    Geng, Z. T.; He, Q.; Jin, C. G.

    2016-07-01

    Developing high-quality hydrogen sensitive material is the core part of hydrogen sensor, whose performance is determined by the sensitive response, reproducibility and recovery of hydrogen material etc. In order to overcome the defects of hydrogen embrittlement in previous hydrogen sensor which were based on the pure palladium, sliver as the second component added to the palladium was studied. Using photochemical etching technology to produce a bent metal mask, the mask is put on the ceramic substrate. Firstly, the thin film of Ta2O5 as a transition layer grew on the ceramic substrate. Then, a series of Pd/Ag alloy film sensors were prepared, and each performance characterization of Pd/Ag alloy film was studied. Testing results indicated that the thin film had a good linear output performance at 0∼⃒30% hydrogen concentration range, and demonstrates a high responsiveness and good repeatability. With temperature increasing, the strength of the responsive signal of the Pd/Ag alloy film decreases and its responsive time was also shortened.

  16. Polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  17. TiAgx thin films for lower limb prosthesis pressure sensors: Effect of composition and structural changes on the electrical and thermal response of the films

    Science.gov (United States)

    Lopes, C.; Gonçalves, C.; Pedrosa, P.; Macedo, F.; Alves, E.; Barradas, N. P.; Martin, N.; Fonseca, C.; Vaz, F.

    2013-11-01

    Titanium-silver, Ti-Ag, thin films display excellent biocompatibility and reveal great potential to be used as conductive materials for prosthesis pressure sensors. In the frame of this work, TiAgx thin films were deposited onto silicon and glass substrates by DC magnetron sputtering, using a pure Ti target containing different amounts of Ag pellets. The films display Ag/Ti ratios varying from 0 up to 0.36, resulting in relatively large range of composition, which gave rise to varied morphological, structural and some selected property responses. For Ag/Ti ratios below 3.0 × 10-3, the TiAgx films exhibited similar behavior to those of standard Ti films. Above this critical value, the role of Ag becomes crucial on the crystallographic structure evolution, as well as on the surface morphology changes of the films. A gradual increase of the Ag/Ti ratio leads to the growth of Ti-Ag crystalline phases, whereas the long range order of Ti grains was reduced from 22 nm down to 7 nm. Similarly, a denser microstructure was developed with a reduction of the sharpness of the surface morphology. This critical Ag/Ti ratio (<3.0 × 10-3) also corresponded to an enhanced electrical resistivity, which reached a value of ρ300K = 72 μΩ cm. The thermal characterization revealed a similar trend, with the existence of two clear distinct zones, related again with the different critical composition ratios and the correspondent changes in both morphology and structural features.

  18. Applications of thin-film photovoltaics for space

    Science.gov (United States)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  19. Thin-Film Photovoltaics: Status and Applications to Space Power

    Science.gov (United States)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  20. Physics of thin films advances in research and development

    CERN Document Server

    Hass, Georg; Vossen, John L

    2013-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 12 reviews advances that have been made in research and development concerning the physics of thin films. This volume covers a wide range of preparative approaches, physics phenomena, and applications related to thin films. This book is comprised of four chapters and begins with a discussion on metal coatings and protective layers for front surface mirrors used at various angles of incidence from the ultraviolet to the far infrared. Thin-film materials and deposition conditions suitable for minimizing reflectance changes with

  1. Growth and Characterization of Epitaxial Oxide Thin Films

    OpenAIRE

    Garg, Ashish

    2001-01-01

    Epitaxial oxide thin films are used in many technologically important device applications. This work deals with the deposition and characterization of epitaxial WO3 and SrBi2Ta2O9 (SBT) thin films on single crystal oxide substrates. WO3 thin films were chosen as a subject of study because of recent findings of superconductivity at surfaces and twin boundaries in the bulk form of this oxide. Highly epitaxial thin films would be desirable in order to be able to create a device withi...

  2. Design and Simulation of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and ADSL systems has been designed based on a domain wall pinning model, the parameters of nano-magnetic thin film such as permeability and coercivity can be calculated. The main properties of the thin film transformer including the size,parallel inductance, Q value and turn ratio have been simulated and optimized. Simulation results show that the thin film transformer can be fairly operated in a frequency range of 0. 001~20 MHz.

  3. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  4. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  5. Role of asphaltenes in stabilizing thin liquid emulsion films.

    Science.gov (United States)

    Tchoukov, Plamen; Yang, Fan; Xu, Zhenghe; Dabros, Tadeusz; Czarnecki, Jan; Sjöblom, Johan

    2014-03-25

    Drainage kinetics, thickness, and stability of water-in-oil thin liquid emulsion films obtained from asphaltenes, heavy oil (bitumen), and deasphalted heavy oil (maltenes) diluted in toluene are studied. The results show that asphaltenes stabilize thin organic liquid films at much lower concentrations than maltenes and bitumen. The drainage of thin organic liquid films containing asphaltenes is significantly slower than the drainage of the films containing maltenes and bitumen. The films stabilized by asphaltenes are much thicker (40-90 nm) than those stabilized by maltenes (∼10 nm). Such significant variation in the film properties points to different stabilization mechanisms of thin organic liquid films. Apparent aging effects, including gradual increase of film thickness, rigidity of oil/water interface, and formation of submicrometer size aggregates, were observed for thin organic liquid films containing asphaltenes. No aging effects were observed for films containing maltenes and bitumen in toluene. The increasing stability and lower drainage dynamics of asphaltene-containing thin liquid films are attributed to specific ability of asphaltenes to self-assemble and form 3D network in the film. The characteristic length of stable films is well beyond the size of single asphaltene molecules, nanoaggregates, or even clusters of nanoaggregates reported in the literature. Buildup of such 3D structure modifies the rheological properties of the liquid film to be non-Newtonian with yield stress (gel like). Formation of such network structure appears to be responsible for the slower drainage of thin asphaltenes in toluene liquid films. The yield stress of liquid film as small as ∼10(-2) Pa is sufficient to stop the drainage before the film reaches the critical thickness at which film rupture occurs. PMID:24564447

  6. Formation of complex wedding-cake morphologies during homoepitaxial film growth of Ag on Ag(111): atomistic, step-dynamics, and continuum modeling

    Energy Technology Data Exchange (ETDEWEB)

    Li Maozhi [Department of Physics, Renmin University of China, Beijing 100872 (China); Han, Yong [Institute of Physical Research and Technology, Iowa State University, Ames, IA 50011 (United States); Thiel, P A [Departments of Chemistry and Materials Science and Engineering and Ames Laboratory-USDOE, Iowa State University, Ames, IA 50011 (United States); Evans, J W [Department of Mathematics and Ames Laboratory-USDOE, Iowa State University, Ames, IA 50010 (United States)

    2009-02-25

    An atomistic lattice-gas model is developed which successfully describes all key features of the complex mounded morphologies which develop during deposition of Ag films on Ag(111) surfaces. We focus on this homoepitaxial thin film growth process below 200 K. The unstable multilayer growth mode derives from the presence of a large Ehrlich-Schwoebel step-edge barrier, for which we characterize both the step-orientation dependence and the magnitude. Step-dynamics modeling is applied to further characterize and elucidate the evolution of the vertical profiles of these wedding-cake-like mounds. Suitable coarse-graining of these step-dynamics equations leads to instructive continuum formulations for mound evolution.

  7. Enhancing light trapping properties of thin film solar cells by plasmonic effect of silver nanoparticles.

    Science.gov (United States)

    Jung, Junhee; Ha, Kyungyeon; Cho, Jaehyun; Ahn, Shihyun; Park, Hyeongsik; Hussain, Shahzada Qamar; Choi, Mansoo; Yi, Junsin

    2013-12-01

    The preparation of thin film silicon solar cells containing Ag nanoparticles is reported in this article. Ag nanoparticles were deposited on fluorine doped tin oxide coated glass substrates by the evaporation and condensation method. a-Si:H solar cells were deposited on these substrates by cluster type plasma enhanced chemical vapor deposition. We discuss the double textured surface effect with respect to both the surface morphology of the substrate and the plasmonic effect of the Ag nanoparticles. Ag nanoparticles of various sizes from 10 to 100 nm were deposited. The haze values of the Ag embedded samples increased with increasing particle size whereas the optical transmittance decreased at the same conditions. The solar cell with the 30 nm size Ag nanoparticles showed a short circuit current density of 12.97 mA/cm2, which is 0.53 mA/cm2 higher than that of the reference solar cell without Ag nanoparticles, and the highest quantum efficiency for wavelengths from 550 to 800 nm. When 30 nm size nanoparticles were employed, the conversion efficiency of the solar cell was increased from 6.195% to 6.696%. This study reports the application of the scattering effect of Ag nanoparticles for the improvement of the conversion efficiency of amorphous silicon solar cells. PMID:24266153

  8. Atomic Structure Control of Silica Thin Films on Pt(111)

    KAUST Repository

    Crampton, Andrew S

    2015-05-27

    Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.

  9. Laser Micromachining of Coated YBa2Cu3O6+x Superconducting Thin Films

    OpenAIRE

    Hix, Kenneth E.; Rendina, Matthew C.; Blackshire, James L.; Levin, George A.

    2004-01-01

    Over the last decade advances in high temperature superconducting (HTS) materials have generated a renewed optimism in the use of this technology in future high-power applications including motors, generators, and power transmission. The most promising superconducting material, YBa2Cu3O6+x (YBCO), has demonstrated current density capacity as high as 106 A/cm2 and is typically deposited epitaxially as a thin film on a buffered metallic substrate. The coated conductor architecture Ag/YBCO/Buffe...

  10. Electrical Resistance Tomography of Conductive Thin Films

    CERN Document Server

    Cultrera, Alessandro

    2016-01-01

    The Electrical Resistance Tomography (ERT) technique is applied to the measurement of sheet conductance maps of both uniform and patterned conductive thin films. Images of the sheet conductance spatial distribution, and local conductivity values are obtained. Test samples are tin oxide films on glass substrates, with electrical contacts on the sample boundary, some samples are deliberately patterned in order to induce null conductivity zones of known geometry while others contain higher conductivity inclusions. Four-terminal resistance measurements among the contacts are performed with a scanning setup. The ERT reconstruction is performed by a numerical algorithm based on the total variation regularization and the L-curve method. ERT correctly images the sheet conductance spatial distribution of the samples. The reconstructed conductance values are in good quantitative agreement with independent measurements performed with the van der Pauw and the four-point probe methods.

  11. Levan nanostructured thin films by MAPLE assembling.

    Science.gov (United States)

    Sima, Felix; Mutlu, Esra Cansever; Eroglu, Mehmet S; Sima, Livia E; Serban, Natalia; Ristoscu, Carmen; Petrescu, Stefana M; Oner, Ebru Toksoy; Mihailescu, Ion N

    2011-06-13

    Synthesis of nanostructured thin films of pure and oxidized levan exopolysaccharide by matrix-assisted pulsed laser evaporation is reported. Solutions of pure exopolysaccharides in dimethyl sulfoxide were frozen in liquid nitrogen to obtain solid cryogenic pellets that have been used as targets in pulsed laser evaporation experiments with a KrF* excimer source. The expulsed material was collected and assembled onto glass slides and Si wafers. The contact angle studies evidenced a higher hydrophilic behavior in the case of oxidized levan structures because of the presence of acidic aldehyde-hydrogen bonds of the coating formed after oxidation. The obtained films preserved the base material composition as confirmed by Fourier transform infrared spectroscopy. They were compact with high specific surface areas, as demonstrated by scanning electron and atomic force microscopy investigations. In vitro colorimetric assays revealed a high potential for cell proliferation for all coatings with certain predominance for oxidized levan. PMID:21520921

  12. Separation Efficiency of Thin-film Evaporators

    Institute of Scientific and Technical Information of China (English)

    R.Billet

    2004-01-01

    The recovery of contaminants and useful substances from liquid wastes, the purification of production effluents and the separation of thermally instable mixtures are some of the multivarious applications of thin-film distillors in many processes of the chemical and allied industries and of the food industries. In a study carried out in pilot plants with distillation test systems there was found a good agreement between the experimental separation results and those obtained by computing with a theorectical model; the latter is based on the assumption of phase equilibrium between the vapour formed on an infinitely small element of area in a liquid film of any given concentric periphery of the vertically arranged evaporator. These tests were perfomed under various phase loads.

  13. Modelling the tribology of thin film interfaces

    CERN Document Server

    Zugic, R

    2000-01-01

    substrate). Within each group of simulations, three lubricant film thicknesses are studied to examine the effect of varying lubricant thickness. Statistical data are collected from each simulation and presented in this work. Via these data, together with the evolution, of atomic and molecular configurations, a very detailed picture of the properties of this thin film interface is presented. In particular, we conclude that perfluoropolyether lubricant forms distinct molecular layers when confined between two substrates, the rate of heat generation under shearing conditions typical of those in a head-disk interface is insufficient for thermal mechanisms to result directly in lubricant degradation, and mechanical stresses attained in the head-disk interface are unlikely to result in any significant degree of lubricant degradation. This thesis examines the tribology of a head-disk interface in an operating hard disk drive via non-equilibrium molecular dynamics computer simulations. The aim of this work is to deri...

  14. Analysis on mechanism of thin film lubrication

    Institute of Scientific and Technical Information of China (English)

    ZHANG Chaohui; LUO Jianbin; HUANG Zhiqiang

    2005-01-01

    It is an important concern to explore the properties and principles of lubrication at nano or molecularscale. For a long time, measurement apparatus for filmthickness of thin film lubrication (TFL) at nano scale havebeen devised on the basis of superthin interferometry technique. Many experiments were carried out to study the lubrication principles of TFL by taking advantages of aforementioned techniques, in an attempt to unveil the mechanism of TFL. Comprehensive experiments were conducted to explore the distinctive characteristics of TFL. Results show that TFL is a distinctive lubrication state other than any known lubrication ones, and serves as a bridge between elastohydrodynamic lubrication (EHL) and boundary lubrication (BL). Two main influence factors of TFL are the solid surface effects and the molecular properties of the lubricant, whose combination effects result in alignment of liquid molecules near the solid surfaces and subsequently lubrication with ordered film emerged. Results of theoretical analysis considering microstructure are consistent with experimental outcomes, thus validating the proposed mechanism.

  15. Thin-film optical shutter. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  16. Fabrication of Optical Tunable Helical Thin Films

    Institute of Scientific and Technical Information of China (English)

    Linxin Hu; Peng Wang; Xingyang Wan; Shaoji Jiang

    2012-01-01

    Circular polarization selection of light is an important property of helical micro-nanostructure. The helical thin films fabricated by glancing angle deposition can provide both circular polarization selection and wavelength tuning in this work. Their selective transmissions were depicted in calculations and experiments. The wave- length tuning mechanism was revealed as the relationship between peak wavelength and deposition parameters. Therefore, tunable circular polarization components can be designed according to the mechanism mentioned above and fabricated by glancing angle deposition techniques. Potential applications include tunable optical filters, optical pulse-shapers, biosensors etc.

  17. Stable localized patterns in thin liquid films

    Science.gov (United States)

    Deissler, Robert J.; Oron, Alexander

    1992-01-01

    A two-dimensional nonlinear evolution equation is studied which describes the three-dimensional spatiotemporal behavior of the air-liquid interface of a thin liquid film lying on the underside of a cooled horizontal plate. It is shown that the equation has a Liapunov functional, and this fact is exploited to demonstrate that the Marangoni effect can stabilize the destabilizing effect of gravity (the Rayleigh-Taylor instability), allowing for the existence of stable localized axisymmetric solutions for a wide range of parameter values. Various properties of these structures are discussed.

  18. Thin Film Photovoltaics: Markets and Industry

    OpenAIRE

    Arnulf Jäger-Waldau

    2012-01-01

    Since 2000, total PV production increased almost by two orders of magnitude, with a compound annual growth rate of over 52%. The most rapid growth in annual cell and module production over the last five years could be observed in Asia, where China and Taiwan together now account for about 60% of worldwide production. Between 2005 and 2009, thin film production capacity and volume increased more than the overall industry but did not keep up in 2010 and 2011 due to the rapid price decline for s...

  19. Transformation process of the magnetron-sputtered Ag$_2$O film in hydrogen annealing

    OpenAIRE

    Gao, Xiaoyong; Zhao, Mengke; Liu, Hongtao; Zhang, Sa

    2013-01-01

    The current paper mainly addresses the effect of the hydrogen partial pressure on the microstructure and transformation of the Ag$_2$O film. The transformation process and mechanism were also analyzed in detail. Increasing the hydrogen partial pressure can accelerate the transformation of Ag$_2$O to Ag and lower the critical transformation temperature of the film due to the enhanced hydrogen reduction, and to both of the lowered activation energy of the reaction of Ag$_2$O with hydrogen and e...

  20. Optical and Nonlinear Optical Response of Light Sensor Thin Films

    OpenAIRE

    Weisz, S.Z.; O. Resto; Fonseca, F; Fernandez, L. F.E.; Vikhnin, V. S.; O. Vasquez; A. J. Rua; H. Liu

    2005-01-01

    For potential ultrafast optical sensor application, both VO2 thin films and nanocomposite crystal-Si enriched SiO2 thin films grown on fused quartz substrates were successfully prepared using pulsed laser deposition (PLD) and RF co-sputtering techniques. In photoluminescence (PL) measurement c-Si/SiO2 film contains nanoparticles of crystal Si exhibits strong red emission with the band maximum ranging from 580 to 750 nm. With ultrashort pulsed laser excitation all films show extremely intense ...

  1. Capillary instabilities in thin films. II. Kinetics

    Energy Technology Data Exchange (ETDEWEB)

    Srolovitz, D.J.; Safran, S.A.

    1986-07-01

    We consider the kinetic evolution of perturbations to thin films. Since all small (nonsubstrate intersecting) perturbations to the film surface decay, we consider the evolution of large perturbations, in the form of a single hole which exposes the substrate. For large holes, the hole radius increases at a constant rate under the assumption of evaporation/condensation kinetics. When the dominant transport mode is surface diffusion, large holes grow with a rate proportional to t/sup -3/4/ (log/sup 3/(t/ rho/sup 4//sub c/)). Small holes with a radii less than rho/sub c/ shrink, where rho/sub c/ is the film thickness divided by the tangent of the equilibrium wetting angle. The growth of these holes eventually leads to hole impingement which ruptures the film, creating a set of disconnected islands. The relaxation time for these islands to go to their equilibrium shape and size (rho/sub eq/) scales as rho/sup 2//sub eq/ or rho/sup 4//sub eq/ for evaporation/condensation or surface diffusion kinetics, respectively.

  2. High Tc thin film and device development

    Energy Technology Data Exchange (ETDEWEB)

    Betts, K.; Burbank, M.B.; Cragg, A.; Fife, A.A.; Kubik, P.R.; Lee, S.; Chaklader, A.C.D.; Roemer, G.; Heinrich, B.; Chrzanowski, J.

    1989-03-01

    Thin films of the high Tc superconductor YBa/sub 2/Cu/sub 3/O/sub y/ have been deposited on various substrates by diode and magnetron sputtering using bulk sintered targets. These films have been analyzed by a variety of methods - SEM, X-rays, Electron Beam Microprobe, Mass Spectrometry and Raman Spectroscopy. The stoichiometries of the films have been measured as a function of the radial position from the centre of the sputtered beam at a fixed target-substrate distance. Patterning of the films has been carried out to form planar structures such as strip lines, microbridges and RF SQUIDs. DC current-voltage characteristics of the microbridges were measured as a function of temperature. RF SQUID behaviour has been observed for single loop devices and their properties established at 4.2 K and higher temperatures. Flux locked noise spectra with a 1/f noise power response were recorded in the frequency range 0.01 to approx.100 Hz. RF SQUID signals have been observed for temperatures up to 55 K.

  3. Phase transitions in pure and dilute thin ferromagnetic films

    Science.gov (United States)

    Korneta, W.; Pytel, Z.

    1983-10-01

    The mean-field model of a thin ferromagnetic film where the nearest-neighbor exchange coupling in surface layers can be different from that inside the film is considered. The phase diagram, equations for the second-order phase-transition lines, and the spontaneous magnetization profiles near the phase transitions are given. It is shown that there is no extra-ordinary transition in a thin film. If the thickness of the film tends to infinity the well-known results for the mean-field model of a semi-infinite ferromagnet are obtained. The generalization for disordered dilute thin ferromagnetic films and semi-infinite ferromagnets is also given.

  4. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  5. Structural and optical properties of AgIn5S8 films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    In thin AgIn5S8 films prepared by pulsed laser evaporation of volume crystals on glass substrates crystal structure, composition, morphology, surfaces were investigated, and transmission and reflection spectra were measured in spectral field from 0.5 to 2.5 μm. Coefficient of optical absorption were calculated and energies for direct and indirect interzone transitions were determined. It is shown that obtained experimental results for laser deposited AgIn5S8 layers agree well with the data for volume crystals

  6. Calculation of Specific Heat for Aluminium Thin Films

    Institute of Scientific and Technical Information of China (English)

    LU Yao; SONG Qing-Lin; XIA Shan-Hong

    2005-01-01

    @@ We employ Prasher's non-dimensional form to analyse the size effects on specific heat of Al thin films. Compared the calculation results of pure aluminium film with the experimental data, it is found that the reduction of phonon states is not the main reason of the size effect on the specific heat Al thin films with thickness from 10hm to 370nm. However, the Al thin film in air usually has an oxidation layer and the specific heat of the layer is smaller than Al. By including the contribution of the oxidation layer to the thin-film specific heat, the calculation results are much closer to the experimental data. This may be a possible reason of the size effects on specific heat of Al thin films.

  7. The investigation of ZnO:Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    Wang Guang-Hong; Zhao Lei; Yan Bao-Jun; Chen Jing-Wei; Wang Ge; Diao Hong-Wei; Wang Wen-Jing

    2013-01-01

    Different aluminum-doped ZnO (AZO)/metal composite thin films,including AZO/Ag/Al,AZO/Ag/nickelchromium alloy (NiCr),and AZO/Ag/NiCr/Al,are utilized as the back reflectors of p-i-n amorphous silicon germanium thin film solar cells.NiCr is used as diffusion barrier layer between Ag and Al to prevent mutual diffusion,which increases the short circuit current density of solar cell.NiCr and NiCr/Al layers are used as protective layers of Ag layer against oxidation and sulfurization,the higher efficiency of solar cell is achieved.The experimental results show that the performance of a-SiGe solar cell with AZO/Ag/NiCr/Al back reflector is best.The initial conversion efficiency is achieved to be 8.05%.

  8. Desorption of Ag from Grain Boundaries in Ag Film on Br and H-Passivated Si(111) Surfaces

    International Nuclear Information System (INIS)

    Growth of Ag film on Br- and H-passivated Si(111) surfaces was examined by Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and photoemission electron microscopy (PEEM) techniques. The phenomenon of thermal grooving was observed after annealing at higher temperatures. Hierarchical desorption of Ag from the grain boundaries produce a fractal structure of Ag-depleted regions. Hierarchical desorption may be used for nanopatterning of the layer.

  9. CLSM and UV-VIS researches on polyoxadiazoles thin films

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2012-06-01

    Full Text Available Purpose: The purpose of this paper was to analyse the surface morphology and optical properties of polyoxadiazoles thin films.Design/methodology/approach: A few different conducting polymers were dissolved in N-methyl-2-pyrrolid(inone. Then the solutions were deposited on a glass substrate by spin coating method with a different spin rate. Changes in surface topography and optical properties were observed. A confocal laser scanning microscope CLSM Zeiss LSM 5 Exciter has been used. Photos have been taken from area of 120 x 120 microns.Findings: The analysis of images and spectra has confirmed that the quality of thin films depends upon the used polymers. It was also observed that the parameters of the spin coating method have significant effect on the morphology and the optical properties. The spin rate has got a strong impact on them.Research limitations/implications: The morphology and optical properties of polyoxadiazoles thin films has been described. This paper include description how the spin rate influence on the polymer thin films. In order to use a polymer thin film in photovoltaics or optoelectronics it must have a high internal transmission density. Further research of polymer thin films are recommended.Practical implications: The spin coating method allows to deposit a uniform thin films. It is important to know how the spin rate influence on the thin films properties. It is also important to find a new use for this group of material engineering in photovoltaic or optoelectronics devices.Originality/value: The good properties of thin films make them suitable for various applications. The value of this paper is defining the optimal parameters of spin-coating technology for polyoxadiazoles thin films. The results allow the choosing optimal parameters of the deposition process. Spin coating is a very good method to obtain thin films which are obligated to have the same thickness over the whole surface.

  10. Fabrication and physico-mechanical properties of thin magnetron sputter deposited silver-containing hydroxyapatite films

    Science.gov (United States)

    Ivanova, A. A.; Surmeneva, M. A.; Tyurin, A. I.; Pirozhkova, T. S.; Shuvarin, I. A.; Prymak, O.; Epple, M.; Chaikina, M. V.; Surmenev, R. A.

    2016-01-01

    As a measure of the prevention of implant associated infections, a number of strategies have been recently applied. Silver-containing materials possessing antibacterial activity as expected might have wide applications in orthopedics and dentistry. The present work focuses on the physico-chemical characterization of silver-containing hydroxyapatite (Ag-HA) coating obtained by radio frequency (RF) magnetron sputtering. Mechanochemically synthesized Ag-HA powder (Ca10-xAgx(PO4)6(OH)2-x, x = 1.5) was used as a precursor for sputtering target preparation. Morphology, composition, crystallinity, physico-mechanical features (Young's modulus and nanohardness) of the deposited Ag-HA coatings were investigated. The sputtering of the nanostructured multicomponent target at the applied process conditions allowed to deposit crystalline Ag-HA coating which was confirmed by XRD and FTIR data. The SEM results revealed the formation of the coating with the grain morphology and columnar cross-section structure. The EDX analysis confirmed that Ag-HA coating contained Ca, P, O and Ag with the Ca/P ratio of 1.6 ± 0.1. The evolution of the mechanical properties allowed to conclude that addition of silver to HA film caused increase of the coating nanohardness and elastic modulus compared with those of pure HA thin films deposited under the same deposition conditions.

  11. Metal nanoparticles for thin film solar cells

    DEFF Research Database (Denmark)

    Gritti, Claudia

    Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution in the infr......Among the different renewable ways to produce energy, photovoltaic cells have a big potential and the research is now focusing on getting higher efficiency and at the same time saving the manufacturing costs improving the performance of thin film solar cells. The spectral distribution...... the promotion of electrons from the valence band of the semiconductor. The photoemission would extend the spectral response of the photovoltaic device. Thus, NPs are placed at the metal/semiconductor interface (in order to exploit the localization characteristic of the LSP enhancement) and are used as active...... the solar cell structure (GaAs, SiO2, Si3N4, AZO/Cr), in order to investigate the LSP resonance and tune it to exploit it below the energy band gap of the semiconductor. EBL is a difficult technique when working by lift-off on critical size (20-50 nm) nanoparticles. The optimization of the process saw...

  12. Optical thin film metrology for optoelectronics

    Science.gov (United States)

    Petrik, Peter

    2012-12-01

    The manufacturing of optoelectronic thin films is of key importance, because it underpins a significant number of industries. The aim of the European joint research project for optoelectronic thin film characterization (IND07) in the European Metrology Research Programme of EURAMET is to develop optical and X-ray metrologies for the assessment of quality as well as key parameters of relevant materials and layer systems. This work is intended to be a step towards the establishment of validated reference metrologies for the reliable characterization, and the development of calibrated reference samples with well-defined and controlled parameters. In a recent comprehensive study (including XPS, AES, GD-OES, GD-MS, SNMS, SIMS, Raman, SE, RBS, ERDA, GIXRD), Abou-Ras et al. (Microscopy and Microanalysis 17 [2011] 728) demonstrated that most characterization techniques have limitations and bottle-necks, and the agreement of the measurement results in terms of accurate, absolute values is not as perfect as one would expect. This paper focuses on optical characterization techniques, laying emphasis on hardware and model development, which determine the kind and number of parameters that can be measured, as well as their accuracy. Some examples will be discussed including optical techniques and materials for photovoltaics, biosensors and waveguides.

  13. Antimony selenide thin-film solar cells

    Science.gov (United States)

    Zeng, Kai; Xue, Ding-Jiang; Tang, Jiang

    2016-06-01

    Due to their promising applications in low-cost, flexible and high-efficiency photovoltaics, there has been a booming exploration of thin-film solar cells using new absorber materials such as Sb2Se3, SnS, FeS2, CuSbS2 and CuSbSe2. Among them, Sb2Se3-based solar cells are a viable prospect because of their suitable band gap, high absorption coefficient, excellent electronic properties, non-toxicity, low cost, earth-abundant constituents, and intrinsically benign grain boundaries, if suitably oriented. This review surveys the recent development of Sb2Se3-based solar cells with special emphasis on the material and optoelectronic properties of Sb2Se3, the solution-based and vacuum-based fabrication process and the recent progress of Sb2Se3-sensitized and Sb2Se3 thin-film solar cells. A brief overview further addresses some of the future challenges to achieve low-cost, environmentally-friendly and high-efficiency Sb2Se3 solar cells.

  14. Effects of Excess Cu Addition on Photochromic Properties of AgCl-Urethane Resin Composite Films

    Directory of Open Access Journals (Sweden)

    Hidetoshi Miyazaki

    2013-01-01

    Full Text Available AgCl-resin photochromic composite films were prepared using AgNO3, HCl-EtOH, CuCl2 ethanol solutions, and a urethane resin as starting materials. The AgCl particle size in the composite films, which was confirmed via TEM observations, was 23–43 nm. The AgCl composite films showed photochromic properties: coloring induced by UV-vis irradiation and bleaching induced by cessation of UV-vis irradiation. The coloring and bleaching speed of the composite film increases with increasing CuCl2 mixing ratio.

  15. Thin-Film Photovoltaic Cells: Long-Term Metal(loid) Leaching at Their End-of-Life

    NARCIS (Netherlands)

    Zimmermann, Y.S.; Schäffer, A.; Corvini, P.F.X.; Lenz, M.

    2013-01-01

    The photovoltaic effect of thin-film copper indium gallium selenide cells (CIGS) is conferred by the latter elements. Organic photovoltaic cells (OPV), relying on organic light-absorbing molecules, also contain a variety of metals (e.g., Zn, Al, In, Sn, Ag). The environmental impact of such technolo

  16. A mechanism for enhanced photocatalytic activity of nano-size silver particle modified titanium dioxide thin films

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Ag-TiO2 nanostructured thin films with silver volume fraction of 0–20% were deposited on silicon and quartz substrates by RF magnetron sputtering and annealed in ambient air at 950°C for 1 h. The phase structure and surface topography of the films were characterized by X-ray diffractometer and transmission electron microscope. Photocatalytic activity of the films was evaluated by light induced degradation of methyl orange (C14H14N3NaO3S) solution using a high pressure mercury lamp as lamp-house. The relation of photocatalytic activity and silver content was studied in detail. It was found that silver content influences phase structure of TiO2 thin films, and silver in the films is metallic Ag (Ag0). With increasing silver content from 0 to 20 vol%, photocatalytic activity of the films increases first and then decreases. A suitable amount (2.5–5 vol%) silver addition can significantly enhance the photocatalytic activity of TiO2 films. The enhanced photocatalytic activity was mainly attributed to the extension of visible light absorption region of the films, the presence of anatase phase, the increase of oxy-gen anion radicals O2? and reactive center of surface Ti3+, and the better separation between electrons and holes on the films surface.

  17. Critical misfit of epitaxial growth metallic thin films

    Institute of Scientific and Technical Information of China (English)

    LI Jian-Chen; LIU Wei; JIANG Qing

    2005-01-01

    The critical misfit of epitaxial growth metallic thin films fc was thermodynamically considered. It is found that there exists a competition between the energy of the misfit dislocation of film and non-coherent interface energy of film-substrate. Equilibrium between these energies was present at a critical atomic misfit fc. When the atomic misfit is larger than the critical value, epitaxial growth does not occur. The critical misfit of the epitaxial growth thin films can be predicted. The results show that fc is proportional to the non-coherent interface energy of the film-substrate, and inversely proportional to the elastic modulus and the thickness of the film.

  18. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  19. The preparation and refractive index of BST thin films

    International Nuclear Information System (INIS)

    Radio-frequency magnetron sputtering technique is used to deposit Ba0.65Sr0.35TiO3 (BST) thin films on fused quartz substrates. In order to prepare the high-quality BST thin films, the crystallization and microstructure of the films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). More intense characteristic diffraction peaks and better crystallization can be observed in BST thin films deposited at 600 deg. C and subsequently annealed at 700 deg. C. The refractive index of the films is determined from the measured transmission spectra. The dependences of the refractive index on the deposition parameters of BST thin films are different. The refractive index of the films increases with the substrate temperature. At lower sputtering pressure, the refractive index increases from 1.797 to 2.197 with pressure increase. However, when the pressure increases up to 3.9 Pa, the refractive index reduces to 1.86. The oxygen to argon ratio also plays an important effect on the refractive index of the films. It has been found that the refractive index increases with increase in the ratio of oxygen to argon. The refractive index of BST thin films is strongly dependent on the annealing temperature, which also increases as the annealing temperature ascends. In a word, the refractive index of BST thin films is finally affected by the films' microstructure and texture

  20. Thinning and rupture of a thin liquid film on a heated surface

    Energy Technology Data Exchange (ETDEWEB)

    Bankoff, S.G.; Davis, S.H.

    1992-08-05

    Results on the dynamics and stability of thin films are summarized on the following topics: forced dryout, film instabilities on a horizontal plane and on inclined planes, instrumentation, coating flows, and droplet spreading. (DLC)

  1. A Water-Based Silver-Nanowire Screen-Print Ink for the Fabrication of Stretchable Conductors and Wearable Thin-Film Transistors.

    Science.gov (United States)

    Liang, Jiajie; Tong, Kwing; Pei, Qibing

    2016-07-01

    A water-based silver-nanowire (AgNW) ink is formulated for screen printing. Screen-printed AgNW patterns have uniform sharp edges, ≈50 μm resolution, and electrical conductivity as high as 4.67 × 10(4) S cm(-1) . The screen-printed AgNW patterns are used to fabricate a stretchable composite conductor, and a fully printed and intrinsically stretchable thin-film transistor array is also realized. PMID:27159406

  2. The NO2 sensing ITO thin films prepared by ultrasonic spray pyrolysis

    OpenAIRE

    Jianzhong Gu; Minghua Lu; Zheng Qin; Minghong Wu; Zheng Jiao

    2003-01-01

    In this paper ITO thin films were deposited on alumina substrates by ultrasonic spray pyrolysis. The NO2 sensing properties of ITO thin films were investigated. The results show ITO thin films have good sensitivity to nitrogen dioxide.

  3. Nano-crystalline Ag–PbTe thermoelectric thin films by a multi-target PLD system

    Energy Technology Data Exchange (ETDEWEB)

    Cappelli, E., E-mail: emilia.cappelli@ism.cnr.it [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Bellucci, A. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Dip. Fisica, Un. Roma Sapienza, Piazzale Aldo Moro 2, 00185 Rome (Italy); Medici, L. [CNR-IMAA, Tito Scalo, 85050 Potenza (Italy); Mezzi, A.; Kaciulis, S. [CNR-ISMN, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy); Fumagalli, F.; Di Fonzo, F. [Center Nano Science Technology @Polimi, I.I.T., Via Pascoli 70/3, 20133 Milano (Italy); Trucchi, D.M. [CNR-ISM, Montelibretti, Via Salaria Km 29.3, P.O.B. 10, 00016 Rome (Italy)

    2015-05-01

    Highlights: • Thermoelectric PbTe thin films, with increasing Ag percentage, were deposited by PLD. • Almost stoichiometric PbTe (Ag doped) films were grown, as verified by XPS analysis. • GI-XRD established the formation of cubic PbTe, with nano-metric structure (∼35 nm). • Surface resistivity shows an increase in conductivity, with increasing Ag doping. • From Seebeck values and XPS depth analysis, 10% Ag seems to be the solubility limit. - Abstract: It has been evaluated the ability of ArF pulsed laser ablation to grow nano-crystalline thin films of high temperature PbTe thermoelectric material, and to obtain a uniform and controlled Ag blending, through the entire thickness of the film, using a multi-target system in vacuum. The substrate used was a mirror polished technical alumina slab. The increasing atomic percentage of Ag effect on physical–chemical and electronic properties was evaluated in the range 300–575 K. The stoichiometry and the distribution of the Ag component, over the whole thickness of the samples deposited, have been studied by XPS (X-ray photoelectron spectroscopy) and corresponding depth profiles. The crystallographic structure of the film was analyzed by grazing incidence X-ray diffraction (GI-XRD) system. Scherrer analysis for crystallite size shows the presence of nano-structures, of the order of 30–35 nm. Electrical resistivity of the samples, studied by the four point probe method, as a function of increasing Ag content, shows a typical semi-conductor behavior. From conductivity values, carrier concentration and Seebeck parameter determination, the power factor of deposited films was calculated. Both XPS, Hall mobility and Seebeck analysis seem to indicate a limit value to the Ag solubility of the order of 5%, for thin films of ∼200 nm thickness, deposited at 350 °C. These data resulted to be comparable to theoretical evaluation for thin films but order of magnitude lower than the corresponding bulk materials.

  4. Surface-Enhanced Raman Scattering activity of Ag/graphene/polymer nanocomposite films synthesized by laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Petreska, Gordana Siljanovska; Blazevska-Gilev, Jadranka [Faculty of Technology and Metallurgy (FTM), University St. Cyril and Methodius, Ruger Boskovic 16, 1000 Skopje, The Former Yugoslav Republic of Macedonia (Macedonia, The Former Yugoslav Republic of); Fajgar, Radek, E-mail: fajgar@icpf.cas.cz [Institute of Chemical Process Fundamentals of the AS CR, Rozvojova 135, 165 02 Prague (Czech Republic); Tomovska, Radmila, E-mail: radmila.tomovska@ehu.es [POLYMAT and Departamento de Química Aplicada, Facultad de Ciencias Químicas, University of the Basque Country UPV/EHU, Joxe Mari Korta zentroa, Tolosa etorbidea 72, Donostia-San Sebastián 20018 (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

    2014-08-01

    Nanocomposites composed of poly(butylacrylate-co-methyl methacrylate) and graphene were ablated with a transversely excited atmosphere CO{sub 2} laser using an incident fluence of up to 7.3 J cm{sup −2}. This resulted in a deposition of thin composite films with graphene sheets that were very well distributed in the polymer matrix. The active substrates for Surface-Enhanced Raman Scattering (SERS) were prepared by subsequent depositions of silver nanoparticles on the surface of the composite films, with an ArF excimer laser ablation of elemental silver. The deposits were characterized by means of spectroscopy, microscopy, and diffraction techniques. The SERS substrate performance was tested using Rhodamine 6G as a probe substance. The probe substance was detected at low concentrations and a highly enhanced Raman signal was achieved. - Highlight: • Deposition of graphene nanosheet s-polymer nanocomposites was achieved. • Nanocomposites were decorated by deposited Ag nanoparticles on the film surface. • Ag/GNS/polymer thin films were tested as SERS substrate using Rhodamine 6G. • The enhancement factor of Ag/GNS/polymer substrate was calculated to be around 22. • Both chemical and electromagnetic mechanisms contribute to the SERS enhancement.

  5. Controlled nanostructuration of polycrystalline tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  6. Vertically aligned biaxially textured molybdenum thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krishnan, Rahul [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Riley, Michael [Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Lee, Sabrina [US Army Armament Research, Development and Engineering Center, Benet Labs, Watervliet, New York 12189 (United States); Lu, Toh-Ming [Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2011-09-15

    Vertically aligned, biaxially textured molybdenum nanorods were deposited using dc magnetron sputtering with glancing flux incidence (alpha = 85 degrees with respect to the substrate normal) and a two-step substrate-rotation mode. These nanorods were identified with a body-centered cubic crystal structure. The formation of a vertically aligned biaxial texture with a [110] out-of-plane orientation was combined with a [-110] in-plane orientation. The kinetics of the growth process was found to be highly sensitive to an optimum rest time of 35 seconds for the two-step substrate rotation mode. At all other rest times, the nanorods possessed two separate biaxial textures each tilted toward one flux direction. While the in-plane texture for the vertical nanorods maintains maximum flux capture area, inclined Mo nanorods deposited at alpha = 85 degrees without substrate rotation display a [-1-1-4] in-plane texture that does not comply with the maximum flux capture area argument. Finally, an in situ capping film was deposited with normal flux incidence over the biaxially textured vertical nanorods resulting in a thin film over the porous nanorods. This capping film possessed the same biaxial texture as the nanorods and could serve as an effective substrate for the epitaxial growth of other functional materials.

  7. Use of thin films in high-temperature superconducting bearings.

    Energy Technology Data Exchange (ETDEWEB)

    Hull, J. R.; Cansiz, A.

    1999-09-30

    In a PM/HTS bearing, locating a thin-film HTS above a bulk HTS was expected to maintain the large levitation force provided by the bulk with a lower rotational drag provided by the very high current density of the film. For low drag to be achieved, the thin film must shield the bulk from inhomogeneous magnetic fields. Measurement of rotational drag of a PM/HTS bearing that used a combination of bulk and film HTS showed that the thin film is not effective in reducing the rotational drag. Subsequent experiments, in which an AC coil was placed above the thin-film HTS and the magnetic field on the other side of the film was measured, showed that the thin film provides good shielding when the coil axis is perpendicular to the film surface but poor shielding when the coil axis is parallel to the surface. This is consistent with the lack of reduction in rotational drag being due to a horizontal magnetic moment of the permanent magnet. The poor shielding with the coil axis parallel to the film surface is attributed to the aspect ratio of the film and the three-dimensional nature of the current flow in the film for this coil orientation.

  8. Structural and Optical Properties of Nanoscale Galinobisuitite Thin Films

    Directory of Open Access Journals (Sweden)

    Omar H. Abd-Elkader

    2014-01-01

    Full Text Available Galinobisuitite thin films of (Bi2S3(PbS were prepared using the chemical bath deposition technique (CBD. Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA complex of Bi3+ and Pb2+ to react with S2− ions, which are released slowly by the dissociation of the thiourea (TU solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM, transmission electron microscopes (TEM and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements.

  9. Structural And Optical Properties Of VOx Thin Films

    OpenAIRE

    Schneider K.

    2015-01-01

    VOx thin films were deposited on Corning glass, fused silica and Ti foils by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. Influence of the oxygen partial pressure in the sputtering chamber on the structural and optical properties of thin films has been investigated.

  10. Optimized grid design for thin film solar panels

    NARCIS (Netherlands)

    Deelen, J. van; Klerk, L.; Barink, M.

    2014-01-01

    There is a gap in efficiency between record thin film cells and mass produced thin film solar panels. In this paper we quantify the effect of monolithic integration on power output for various configurations by modeling and present metallization as a way to improve efficiency of solar panels. Grid d

  11. Eutectic bonds on wafer scale by thin film multilayers

    Science.gov (United States)

    Christensen, Carsten; Bouwstra, Siebe

    1996-09-01

    The use of gold based thin film multilayer systems for forming eutectic bonds on wafer scale is investigated and preliminary results will be presented. On polished 4 inch wafers different multilayer systems are developed using thin film techniques and bonded afterwards under reactive atmospheres and different bonding temperatures and forces. Pull tests are performed to extract the bonding strengths.

  12. Direct determination of lead in urban particulate material and lubricating oil with thin silver films electrically vaporized from membrane filters

    Energy Technology Data Exchange (ETDEWEB)

    Swan, J.M.; Sacks, R.D.

    1985-06-01

    A rapid, direct method for the determination of lead in suspended solid particles is described. Particles are collected on a polycarbonate membrane filter coated with a thin film of high-purity Ag. The metal film does not affect filtration properties of the membrane. The thin film and sample are atomized and excited in the high-temperature plasma produced by the electrical vaporization of the Ag film. The Pb concentration is determined by emission spectroscopy. Sample introduction and standardization techniques are presented. Sample particle size and loading effects are considered. A high-inductance, longer-duration discharge is more useful for larger samples and for larger particles than a low-inductance, shorter-duration discharge. Analytical results are presented for Pb in NBS standard reference material SRM 1648 (urban particulate material) and lubricating oil spiked with Pb powder. 14 references, 4 figures, 3 tables.

  13. Thin NaCl films on silver (001): island growth and work function

    OpenAIRE

    Cabailh, Gregory; Henry, Claude R.; Barth, Clemens

    2012-01-01

    The surface work function (WF) and substrate temperature dependence of the NaCl thin-film growth on Ag(001) have been studied by noncontact atomic force microscopy and Kelvin probe force microscopy. In the sub-monolayer range, the NaCl film is composed of large crystalline islands, which decrease in density and increase in size with increasing temperature during deposition. Each island is composed of a large base island 2 monolayers (ML) thick (for T > 343 K), which collects impinging NaCl mo...

  14. Photomodulation of InGaZnO thin film transistors with interfacial silver nanoparticles

    Science.gov (United States)

    Yu, Jiin; Cho, Jae Eun; Lee, Hyeon-Mo; Park, Jin-Seong; Kang, Seong Jun

    2016-11-01

    Silver nanoparticles (Ag NPs) were inserted between indium gallium zinc oxide (IGZO) and a gate insulator to enhance the generation of plasmonic photocurrent with the illumination of visible light. Ag NPs were formed on a silicon dioxide gate insulator using a thermal evaporator and a post-annealing process. Then, an amorphous IGZO active channel layer was deposited on the Ag NPs using a sputter system. The prepared Ag NPs effectively absorbed a wide wavelength range of visible light due to plasmon effects. The IGZO thin film transistors (TFTs) with interfacial Ag NPs showed a large photocurrent due to the strong coupling between localized plasmons and electrical carriers in the active channel region of the TFTs. The prepared device showed good modulation behavior under visible light even though IGZO has a wide band gap. The results indicate that interfacial Ag NPs enabled the photomodulation of IGZO TFTs when exposed to a periodic signal of low-energy visible light. This work demonstrates a useful way to develop visible-light phototransistors based on a wide band gap semiconductor and plasmonic Ag NPs.

  15. Effect of film thickness and texture morphology on the physical properties of lead sulfide thin films

    Science.gov (United States)

    Azadi Motlagh, Z.; Azim Araghi, M. E.

    2016-02-01

    Lead sulfide (PbS) thin films were prepared onto ultra-clean quartz substrate by the electron beam gun (EBG) evaporation method. The thicknesses of the thin films were 50, 100, 150 and 200 nm. They were annealed at 423 K for 2 h. Field emission scanning electron microscopy (FESEM) images of the thin films showed their texture morphology at the surface of the quartz substrate. X-ray diffraction (XRD) patterns of the thin films showed that they have a cubic phase and rock-salt structure after annealing. The average crystallite size for the thin films was in the range of 32-100 nm. Optical measurements confirmed that crystalline thin films have a direct band gap that increases by decreasing the film thickness. This blue shift of the band gap of thin films compared to the bulk structure can be attributed to the quantum confinement effects in the nanoparticles. A decrease in conductivity by increasing the temperature confirmed the positive temperature coefficient of resistance in the thin films that showed the dominant conduction mechanism is via a band-like transition. The density of localized states at the Fermi level increases by increasing the film thickness. Current-voltage behavior of the thin films showed an increase in both dark current and photocurrent by increasing the crystallite size which is discussed, based on the presence of trap states and barriers in nanostructures.

  16. Effect of film thickness and texture morphology on the physical properties of lead sulfide thin films

    International Nuclear Information System (INIS)

    Lead sulfide (PbS) thin films were prepared onto ultra-clean quartz substrate by the electron beam gun (EBG) evaporation method. The thicknesses of the thin films were 50, 100, 150 and 200 nm. They were annealed at 423 K for 2 h. Field emission scanning electron microscopy (FESEM) images of the thin films showed their texture morphology at the surface of the quartz substrate. X-ray diffraction (XRD) patterns of the thin films showed that they have a cubic phase and rock-salt structure after annealing. The average crystallite size for the thin films was in the range of 32–100 nm. Optical measurements confirmed that crystalline thin films have a direct band gap that increases by decreasing the film thickness. This blue shift of the band gap of thin films compared to the bulk structure can be attributed to the quantum confinement effects in the nanoparticles. A decrease in conductivity by increasing the temperature confirmed the positive temperature coefficient of resistance in the thin films that showed the dominant conduction mechanism is via a band-like transition. The density of localized states at the Fermi level increases by increasing the film thickness. Current–voltage behavior of the thin films showed an increase in both dark current and photocurrent by increasing the crystallite size which is discussed, based on the presence of trap states and barriers in nanostructures. (paper)

  17. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  18. Nanotwin hardening in a cubic chromium oxide thin film

    Directory of Open Access Journals (Sweden)

    Kazuma Suzuki

    2015-09-01

    Full Text Available NaCl-type (B1 chromium oxide (CrO has been expected to have a high hardness value and does not exist as an equilibrium phase. We report a B1-based Cr0.67O thin film with a thickness of 144 nm prepared by pulsed laser deposition as an epitaxial thin film on a MgO single crystal. The thin film contained a number of stacking faults and had a nanotwinned structure composed of B1 with disordered vacancies and corundum structures. The Cr0.67O thin film had a high indentation hardness value of 44 GPa, making it the hardest oxide thin film reported to date.

  19. Nanocoatings and ultra-thin films technologies and applications

    CERN Document Server

    Tiginyanu, Ion

    2011-01-01

    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  20. Physical properties in thin films of iron oxides.

    Energy Technology Data Exchange (ETDEWEB)

    Uribe, J. D.; Osorio, J.; Barrero, C. A.; Girata, D.; Morales, A. L.; Hoffmann, A.; Materials Science Division; Univ. de Antioquia

    2008-01-01

    We have grown hematite ({alpha}-Fe{sub 2}O{sub 3}) thin films on stainless steel substrates and magnetite (Fe{sub 3}O{sub 4}) thin films on (0 0 1)-Si single crystal substrates by a RF magnetron sputtering process. {alpha}-Fe{sub 2}O{sub 3} thin films were grown in an Ar atmosphere at substrate temperatures around 400 C, and Fe{sub 3}O{sub 4} thin films in an Ar/O{sub 2} reactive atmosphere at substrate temperatures around 500 C. Conversion electron Moessbauer (CEM) spectra of {alpha}-Fe{sub 2}O{sub 3} thin films exhibit values for hyperfine parameter characteristic of the hematite stoichiometric phase in the weak ferromagnetic state [R.E. Vandenberghe, in: Moessbauer Spectroscopy and Applications in Geology, University Gent, Belgium, 1990. [1