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Sample records for ag thin films

  1. TRIBOLOGICAL PROPERTIES OF CrAgN THIN FILMS

    Directory of Open Access Journals (Sweden)

    Peter Jurči

    2013-04-01

    Full Text Available CrN and CrAgN thin films were magnetron sputtered onto the substrate made from Vanadis 6 cold work tool steel. The films were examined on tribological properties using a high temperature Pin-on-disc tribometer. Obtained results show that there is almost no effect of Ag addition on the friction coefficient when tested at a room temperature against alumina. The testing against the same counterpart at higher temperature gave positive effect of the silver addition on the friction coefficient. The testing against 100Cr6 ball bearing steel gave higher friction coefficient than that against alumina while the testing against CuSn6-bronze led to much lower μ. When tested at a room temperature, the wear performance of the films was positively affected only in the case of the CrAg3N film developed at 500 °C. On the other hand, addition of 3 wt% Ag into the CrN increased the wear performance at elevated temperatures while the addition of 15 wt% Ag has made the film too soft and sensitive to wear.

  2. Tribological properties of CrAgN thin films

    Directory of Open Access Journals (Sweden)

    Peter Jurči

    2013-02-01

    Full Text Available CrN and CrAgN thin films were magnetron sputtered onto the substrate made from Vanadis 6 cold work tool steel. The films were examined on tribological properties using a high temperature Pin-on-disc tribometer. Obtained results show that there is almost no effect of Ag addition on the friction coefficient when tested at a room temperature against alumina. The testing against the same counterpart at higher temperature gave positive effect of the silver addition on the m. The testing against 100Cr6 ball bearing steel gave higher friction coefficient than that against alumina while the testing against CuSn6-bronze led to much lower m. When tested at a room temperature, the wear performance of the films was positively affected only in the case of the CrAg3N film developed at 500 oC. On the other hand, addition of 3 wt% Ag into the CrN increased the wear performance at elevated temperatures while the addition of 15 wt% Ag has made the film too soft and sensitive to wear.

  3. Microstructure of electroplated Cu(Ag) alloy thin films

    International Nuclear Information System (INIS)

    Electroplated Cu(Ag) alloy thin films are potential candidates for future electronic devices in terms of lifetime and reliability compared to copper as the state of the art interconnect material. In the present paper we focus on the microstructure of Cu(Ag) alloy films considering the grain evolution as well as silver incorporation and segregation. We show that Ag alloying addition prevents room temperature recrystallization. Thermally induced grain growth occurs mainly between 180 oC and 330 oC. Silver can be incorporated as solid solution into the Cu matrix by up to 0.8 at.% after annealing and even in higher concentrations in the as-deposited state, which is significantly above the equilibrium solubility limit. Precipitations are formed by the continuous mode and can be mainly found at the film surface but also inside the Cu(Ag) grains as ball-shaped particles. Based on our results a reliability improvement is expected by mechanical strengthening due to alloying effects while maintaining a low electrical resistivity and a {111} fiber texture.

  4. Two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Linhua, E-mail: congyu3256@tom.com [School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Optics and Photonic Technology Laboratory, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Zheng, Gaige; Zhao, Lilong; Pei, Shixin [School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Optics and Photonic Technology Laboratory, Nanjing University of Information Science and Technology, Nanjing 210044 (China)

    2015-02-15

    Ag-doped ZnO thin films were prepared by a sol–gel method. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), UV–vis and photoluminescence spectra. The results show that the Ag in the ZnO thin films annealed at 500 °C for 1 h substitutes for Zn and exists in the form of Ag{sup +} ion (Ag{sub Zn}) while the Ag in the ZnO thin films without a post-annealing mainly exists in the form of simple substance (Ag{sup 0}). The incorporation of Ag indeed can improve the ultraviolet emission of ZnO thin films and suppress the visible emissions at the same time. However, the mechanisms on the ultraviolet emission enhancement in the annealed and unannealed Ag-doped ZnO thin films are very different. As for the post-annealed Ag-doped ZnO thin films, the UV emission enhancement maybe mainly results from more electron–hole pairs (excitons) due to Ag-doping while for the unannealed Ag-doped ZnO thin films; the UV emission enhancement is attributed to the resonant coupling between exciton emission in ZnO and localized surface plasmon in Ag nanoparticles. - Highlights: • Ag-doped ZnO thin films have been prepared by the sol–gel method. • Ag-doping can enhance ultraviolet emission of ZnO thin films and depress the visible emissions at the same time. • There are two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films. • The UV emission enhancement from the resonant coupling between excitonic emissions and localized surface plasmon in Ag nanoparticle is very attractive.

  5. Ferroelectric domain of epitaxial AgNbO3 thin film

    Science.gov (United States)

    Ahn, Yoonho; Seo, Jeongdae; Lee, Kwang Jo; Son, Jong Yeog

    2016-03-01

    We investigated ferroelectric properties of silver niobate (AgNbO3) thin film grown on Nb-doped SrTiO3 substrate by pulsed laser deposition. The AgNbO3 thin film exhibited room temperature ferroelectricity with a large remanent polarization of about 31 μC/cm2 (2Pr~62 μC/cm2) and fast switching behavior within 120 ns. Triangular grains of AgNbO3 thin film were observed by atomic force microscopy (AFM). The piezoelectric force microscopy (PFM) study revealed that the AgNbO3 thin film had mosaic-like ferroelectric domain structure. In comparison with PbTiO3 thin films, domain size of the AgNbO3 thin films was smaller than that of PbTiO3 thin films. Based on Landau, Lifshitz, and Kittel (LLK) scaling law of the domain size versus film thickness curves, it is inferred that AgNbO3 thin films have slightly lower domain wall energy than that of PbTiO3 thin films.

  6. Formation of surface oxides and Ag2O thin films with atomic oxygen on Ag(111)

    Science.gov (United States)

    Derouin, Jonathan; Farber, Rachael G.; Heslop, Stacy L.; Killelea, Daniel R.

    2015-11-01

    The nature of the oxygen species adsorbed to silver surfaces is a key component of the heterogeneously catalyzed epoxidation of ethylene and partial oxidation of methanol over silver catalysts. We report the formation of two different silver-oxygen species depending on the flux and energy of incident gas-phase oxygen atoms on an Ag(111) surface. A combination of surface science techniques was used to characterize the oxidized surfaces. Atomic oxygen was generated with an Ir filament; lower temperatures created surface oxides previously reported. When O was deposited with a higher filament temperature, the surface became highly corrugated, little subsurface oxygen was observed, and thin layers of Ag2O were likely formed. These results show that the energy and flux of oxygen are important parameters in the chemical identity and abundance of oxygen on silver surfaces and suggest that formation of the Ag2O thin film hinders formation of subsurface oxygen.

  7. AgSbSe{sub 2} and AgSb(S,Se){sub 2} thin films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Garza, J.G. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Shaji, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico); Rodriguez, A.C.; Das Roy, T.K. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Krishnan, B., E-mail: kbindu_k@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, San Nicolas de los Garza, Nuevo Leon (Mexico); Facultad de Ingenieria Mecanica y Electrica, CIIDIT - Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2011-10-01

    Silver antimony selenide (AgSbSe{sub 2}) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb{sub 2}S{sub 3}), silver selenide (Ag{sub 2}Se), selenium (Se) and silver (Ag). Sb{sub 2}S{sub 3} thin film was prepared from a chemical bath containing SbCl{sub 3} and Na{sub 2}S{sub 2}O{sub 3}, Ag{sub 2}Se from a solution containing AgNO{sub 3} and Na{sub 2}SeSO{sub 3} and Se thin films from an acidified solution of Na{sub 2}SeSO{sub 3}, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10{sup -3} Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe{sub 2} or AgSb(S,Se){sub 2} depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe{sub 2}/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V{sub oc} = 435 mV and J{sub sc} = 0.08 mA/cm{sup 2} under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe{sub 2} as an absorber material by a non-toxic selenization process is achieved.

  8. AgSbSe2 and AgSb(S,Se)2 thin films for photovoltaic applications

    International Nuclear Information System (INIS)

    Silver antimony selenide (AgSbSe2) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb2S3), silver selenide (Ag2Se), selenium (Se) and silver (Ag). Sb2S3 thin film was prepared from a chemical bath containing SbCl3 and Na2S2O3, Ag2Se from a solution containing AgNO3 and Na2SeSO3 and Se thin films from an acidified solution of Na2SeSO3, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 deg. C in vacuum (10-3 Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe2 or AgSb(S,Se)2 depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe2/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed Voc = 435 mV and Jsc = 0.08 mA/cm2 under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe2 as an absorber material by a non-toxic selenization process is achieved.

  9. Optical and electrical characterization of AgInS2 thin films deposited by spray pyrolysis

    International Nuclear Information System (INIS)

    Silver indium sulfide (AgInS2) thin films have been prepared by spray pyrolysis (SP) technique using silver acetate, indium acetate, and N, N-dimethylthiourea as precursor compounds. Films were deposited onto glass substrates at different substrate temperatures (Ts) and Ag:In:S ratios in the starting solutions. Optical transmission and reflection as well as electrical measurements were performed in order to study the effect of deposition parameters on the optical and electrical properties of AgInS2 thin films. X-ray diffraction measurements were used to identify the deposited compounds. It was found that different compounds such as AgInS2, Ag2S, In2O3, and In2S3 can be grown only by changing the Ag:In:S ratio in the starting solution and Ts. So that, by carefully selecting the deposition parameters, single phase AgInS2 thin films can be easily grown. Thin films obtained using a molar ratio of Ag:In:S = 1:1:2 and Ts = 400 oC, have an optical band gap of 1.9 eV and n-type electrical conductivity with a value of 0.3 Ω-1 cm-1 in the dark.

  10. Enhanced photoelectrochemical performance of Ag-ZnO thin films synthesized by spray pyrolysis technique

    International Nuclear Information System (INIS)

    Highlights: → Synthesis of Ag-ZnO nanocomposites by spray pyrolysis technique. → Examine the effect of Ag doping on the structural, morphological optical, and photoelectrochemical properties. → Surface Plasmon Resonance phenomenon of the spray deposited Ag-ZnO nanocomposites. → Enhancement in photoelectrochemical performance of ZnO thin films after Ag doping. - Abstract: Silver doped zinc oxide (Ag-ZnO) thin films were deposited on glass and tin doped indium oxide (ITO) coated glass substrates by using pneumatic spray pyrolysis technique (SPT) at 450 deg. C from aqueous solutions of zinc acetate and silver nitrate precursors. The effect of silver doping on structural, morphological and optical properties of films was studied. The XRD spectra of the Ag-ZnO films indicate the polycrystalline nature having hexagonal crystal structure. SEM micrographs show the uniform distribution of spherical grains of about 80-90 nm grain size for the pure ZnO thin films. The Ag nanoparticles are clearly visualized in SEM images of Ag-ZnO samples. The optical band gap energy decreases as the percentage of silver doping increases. Surface Plasmon Resonance (SPR) related phenomena are observed and correlated to the optical properties of Ag-ZnO thin films. The overall photoelectrochemical (PEC) performance of the samples was investigated and discussed. Moreover, the samples are more photoactive as compare to the pure ZnO sample and the sample ZnOAg15 shows the highest current. The photocurrent increases upto 249 μA cm-2 and 303 μA cm-2 in visible light and in UV illumination, respectively, and then decreases as the Ag doping increases into the film.

  11. Study of thermal annealing induced plasmonic bleaching in Ag:TiO2 nanocomposite thin films

    International Nuclear Information System (INIS)

    Graphical abstract: The plasmonic bleaching observed in Ag:TiO2 nanocomposite thin films, when annealed at 450 °C in Ar environment, is due to the dissociation of Ag nanoparticles followed by diffusion of Ag atoms outside the nanocomposite film and into substrate. - Plasmonic properties of metal nanomaterials critically affect on thermal treatments. One of such effects is ‘plasmonic-bleaching’ observed in ‘atom beam co-sputtering’ derived Ag:TiO2 nanocomposite thin films, when annealed at 450 °C. The origin of bleaching is investigated using glancing angle X-ray diffraction and Rutherford backscattering spectroscopy. The kinetics of Ag nanoparticles during the deposition and after thermal treatment is presented to understand involved host-matrix interactions. Based on Rutherford Materials Program simulation, possible mechanism of bleaching is presented

  12. Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hung-Wei, E-mail: hwwu@mail.ksu.edu.tw [Department of Computer and Communication, Kun Shan University, No. 949, Dawan Rd., Yongkang Dist., Tainan City 710, Taiwan (China); Yang, Ru-Yuan [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China); Hsiung, Chin-Min; Chu, Chien-Hsun [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China)

    2012-10-01

    Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm, which can be decreased to 3.8 Multiplication-Sign 10{sup -5} {Omega}-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 Multiplication-Sign 10{sup -3} {Omega}{sup -1}. It was shown that the multilayer thin films have potential for applications in optoelectronics. - Highlights: Black-Right-Pointing-Pointer High-quality Al-doped ZnO (AZO)/Ag/AZO Transparent Conducting Oxide films. Black-Right-Pointing-Pointer AZO films (30 nm) made by RF sputtering; E-beam evaporation for Ag film (5-15 nm). Black-Right-Pointing-Pointer Influence of Ag thickness on optical and electrical properties were analyzed. Black-Right-Pointing-Pointer High quality multilayer film with optimal intermediate Ag layer thickness of 10 nm. Black-Right-Pointing-Pointer 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm resistivity, 91.89% transmittance at 470 nm obtained and reproducible.

  13. Deposition, structure, and properties of cermet thin films composed of Ag and Y-stabilized zirconia

    International Nuclear Information System (INIS)

    This paper reports that Ag1-x[(Y2O3)0.1(ZrO2)0.9]x (YSZ) cermet thin films have been deposited by reactive magnetron cosputtering from Ag and Zr/Y targets in Ar-O2 mixtures. The deposition conditions were such that the YSZ component in the films was fully oxidized. The film densities varied from ∼75% to >85% as the total pressure was decreased from 20 to 5 mTorr. Film resistivities ρ varied with Ag volume fraction fAg from 5 x 10-6 Ω-cm to >109 Ω-cm. For fAg Ag. For fAg > 0.4, ρ decreased more gradually with increasing fAg. ρ in annealed films ranged from 4 x 10-4 Ω-cm for fAg = 0.4 to 5 x 10-6 Ω-cm for pure Ag. Long term (>100 h) annealing at ≥700 degrees C resulted in a gradual increase in cermet resistivity due to Ag evaporation and Ag segregation to surface islands. Both decomposition mechanisms were effectively suppressed due to Ag evaporation and Ag segregation to surface islands. Both decomposition mechanisms were effectively suppressed at up to 750 degrees C by depositing a 1 μm thick porous perovskite cap layer on the cermet. Complex impedance spectroscopy measurements in air of cermet electrodes on YSZ electrolytes gave interfacial resistances that were a factor of ∼6 lower than those of pure AG electrodes, e.g., 1.4 Ω-cm2 at 750 degrees C. Ag-YSZ cermets thus have potential as high-conductivity, low-overpotential air electrode materials for solid-oxide electrochemical devices operating at temperatures ≤750 degrees C

  14. Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO3 thin films

    International Nuclear Information System (INIS)

    Ag nanoparticle (NP) embedded BaTiO3 (BTO) thin films on SrRuO3-coated SrTiO3 (STO) substrates are prepared by the integrated nanocluster beam deposition and laser-molecular beam epitaxy. Enhanced resistive switching, up to an ON/OFF ration of 104, has been achieved at low switching voltage (less than 1 V) without a forming voltage. These characteristics make such nanocomposite film very promising for application of low voltage non-volatile random access memory. The enhanced resistive switching effect may be attributed to the charge storage effect of the Ag nanoparticles and easy formation of Ag filament inside the BTO film

  15. AgSb(SxSe1−x)2 thin films for solar cell applications

    International Nuclear Information System (INIS)

    Highlights: ► AgSb(SxSe1−x)2 thin films were formed by heating Na2SeSO3 dipped Sb2S3/Ag layers. ► S/Se ratio was varied by changing the dipping time in Na2SeSO3 solution. ► Characterized the films using XRD, XPS, SEM, Optical and electrical measurements. ► Band gap engineering of 1−1.1 eV for x = 0.51 and 0.52 respectively. ► PV Glass/FTO/CdS/AgSb(SxSe1−x)2/C were prepared showing Voc = 410 mV, Jsc = 5.7 mA/cm2. - Abstract: Silver antimony sulfoselenide (AgSb(SxSe1−x)2) thin films were prepared by heating glass/Sb2S3/Ag layers after selenization using sodium selenosulphate solution. First, Sb2S3 thin films were deposited on glass substrates from a chemical bath containing SbCl3 and Na2S2O3. Then Ag thin films were thermally evaporated onto glass/Sb2S3, followed by selenization by dipping in an acidic solution of Na2SeSO3. The duration of selenium dipping was varied as 30 min and 2 h. The heating condition was at 350 °C for 1 h in vacuum. Analysis of X-ray diffraction pattern of the thin films formed after heating showed the formation of AgSb(SxSe1−x)2. Morphology and elemental analysis were done by scanning electron microscopy and energy dispersive X-ray detection. Depth profile of composition of the thin films was performed by X-ray Photoelectron Spectroscopy. The spectral study showed the presence of Ag, Sb, S, and Se, and the corresponding binding energy analysis confirmed the formation of AgSb(SxSe1−x)2. Photovoltaic structures (PV) were prepared using AgSb(SxSe1−x)2 thin films as absorber and CdS thin films as window layers on FTO coated glass substrates. The PV structures were heated at 60–80 °C in air for 1 h to improve ohmic contact. Analysis of J–V characteristics of the PV structures showed Voc from 230 to 490 mV and Jsc 0.28 to 5.70 mA/cm2, under illumination of AM1.5 radiation using a solar simulator

  16. Low emissivity Ag/Ta/glass multilayer thin films deposited by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sun Ho [Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City (Korea, Republic of); Lee, Kee Sun [Division of Advanced Materials Engineering, Kongju National University, Budaedong, Cheonan City (Korea, Republic of); Green Home Energy Technology Center, Cheonan City (Korea, Republic of); Sivasankar Reddy, A. [Green Home Energy Technology Center, Cheonan City (Korea, Republic of)

    2011-09-15

    Ta is deposited on a glass substrate as an interlayer for the two-dimensional growth of Ag thin films because Ta has good thermal stability and can induce a negative surface-energy change in Ag/glass. From the transmission electron microscopy results, we concluded that the Ag crystals in the bottom layer (seemingly on Ag/Ta) were flattened; this was rarely observed in the three-dimensional growth mode. Comparing Ag/Ta/glass with Ag/glass, we found that the Ta interlayer was effective in reducing both the resistance and the emissivity, accompanied by the relatively high transmittance in the visible region. In particular, Ag(9 nm)/Ta(1 nm)/glass film showed 0.08 of the emissivity, including {approx}61% of the transmittance in the visible region (wavelength: 550 nm).

  17. Low emissivity Ag/Ta/glass multilayer thin films deposited by sputtering

    International Nuclear Information System (INIS)

    Ta is deposited on a glass substrate as an interlayer for the two-dimensional growth of Ag thin films because Ta has good thermal stability and can induce a negative surface-energy change in Ag/glass. From the transmission electron microscopy results, we concluded that the Ag crystals in the bottom layer (seemingly on Ag/Ta) were flattened; this was rarely observed in the three-dimensional growth mode. Comparing Ag/Ta/glass with Ag/glass, we found that the Ta interlayer was effective in reducing both the resistance and the emissivity, accompanied by the relatively high transmittance in the visible region. In particular, Ag(9 nm)/Ta(1 nm)/glass film showed 0.08 of the emissivity, including ∼61% of the transmittance in the visible region (wavelength: 550 nm).

  18. Multiple surface plasmon waves in [prism/Ag/SiO2 helical thin film] Kretschmann configuration

    International Nuclear Information System (INIS)

    Two surface plasmon resonance dips in reflectance angular spectrum for a p-polarized incident beam of a [prism/Ag/SiO2 helical thin film] Kretschmann configuration are measured and compared with simulations. The simulation also shows that the angular positions of resonances due to surface plasmon waves in reflectance spectrum are sensitive to the variation of principal refractive indices of helical films. It indicates that multiple surface plasmon waves at the [Ag/SiO2 helical thin film] interface is more attractive than the traditional method of producing only one surface plasmon wave for chemical- and bio-sensing applications.

  19. Preparation of vanadium oxide thin films modified with Ag using a hybrid deposition configuration

    Science.gov (United States)

    Gonzalez-Zavala, F.; Escobar-Alarcón, L.; Solís-Casados, D. A.; Rivera-Rodríguez, C.; Basurto, R.; Haro-Poniatowski, E.

    2016-04-01

    The application of a hybrid deposition configuration, formed by the interaction of a laser ablation plasma with a flux of atomic vapor, to deposit vanadium oxide thin films modified with different amounts of silver, is reported. The effect of the amount of Ag incorporated in the films on their structural, morphological, compositional and optical properties was studied. The obtained results reveal that films with variable Ag content from 11.7 to 24.6 at.% were obtained. Depending on the silver content, the samples show very different surface morphologies. Optical characterization indicates the presence of nanostructures of Ag. Thin films containing silver exhibit better photocatalytic performances than unmodified V2O5 films. Raman spectra reveal that as the silver content is increased, the signals associated with V2O5 disappear and new modes attributed mainly to silver vanadates appear suggesting the formation of ternary compounds.

  20. Growth of AgInS2 thin films by ultrasonic spray pyrolysis technique

    International Nuclear Information System (INIS)

    Silver Indium Di-sulfide (AgInS2) thin films are deposited using ultrasonic spray pyrolysis technique and the effect of substrate temperature (Ts) on film growth is studied by varying the temperature from 250 to 400 °C. From the structural analysis, orthorhombic AgInS2 phase is identified with preferential orientation along (002) plane. Further analysis with Raman revealed the coexistence of Cu–Au ordered and chalcopyrite structures in the films. Stoichiometric films are obtained at Ts of 300 °C. Above 300 °C, the film conductivity changed from p to n-type and the grain size decreased. The band gap of AgInS2 films varied from 1.55 to 1.89 eV and absorption coefficient is found to be > 104 cm−1. The films have sheet resistance in the range of 0.05 to 1300 Ω/□. Both p and n type films are prepared through this technique without any external doping. - Highlights: • Silver Indium Di-sulfide (AgInS2) films are grown using ultrasonic spray pyrolysis. • AgInS2 films showed coexistence of orthorhombic and tetragonal structures. • Band gap increased up to 1.89 eV. • 0.96 μm thick p type films are prepared without external doping. • Stoichiometry is achieved for the films prepared at 300 °C

  1. Microstructures and magnetic properties of [SiO2/FePt]5/Ag thin films

    Institute of Scientific and Technical Information of China (English)

    FAN Jiu-ping; XU Xiao-hong; JIANG Feng-xian; TIAN Bao-qiang; WU Hai-shun

    2008-01-01

    [SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO2/FePt]5/Ag films are changed into L10 and (111) mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controllingSiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 (0. 6nm)/FePt (3 nm)]5/Ag (50 nm) films and highly (001)-oriented films can be obtained in the [SiO2 (2 nm)/FePt (3 nm)]5/Ag (50 nm) films.

  2. Irradiation induced improvement in crystallinity of epitaxially grown Ag thin films on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Takahiro, Katsumi; Nagata, Shinji; Yamaguchi, Sadae [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

    1997-03-01

    We report the improvement in crystallinity of epitaxially grown Ag films on Si(100) substrates with ion irradiation. The irradiation of 0.5 MeV Si ions to 2x10{sup 16}/cm{sup 2} at 200degC, for example, reduces the channeling minimum yield from 60% to 6% at Ag surface. The improvement originates from the decrease of mosaic spread in the Ag thin film. In our experiments, ion energy, ion species and irradiation temperature have been varied. The better crystallinity is obtained as the higher concentration of defect is generated. The mechanism involved in the irradiation induced improvement is discussed. (author)

  3. Fabrication of Ag, FeNi, Cu Thin Film for Magnetic Sensor

    International Nuclear Information System (INIS)

    It has been fabricated a Ag, FeNi, Cu thin film by sputtering method. The thin film material is deposited on the glass substrate heated from 100 oC to 400 oC having dimensions of 2.5 x 1 cm2. The sputtering time of Ag, FeNi and Cu materials are 10 minutes respectively operating voltage is 2.5 kV and electrode distance 2.5 cm. The FeNi material is alloy having ratio 70% : 30%, that is the best composition formed by previous observer. On the glass substrate, there are four layers such as: the first is FeNi, second Cu, third FeNi, and the fourth, Ag. During the sputtering process the power was 40 Watts (2 kV, 20 mA). The thin film Ag, FeNi, CuFeNi was varied for variation of sputtering to get the optimum conditions of parameter process. From the sputtering result, it was produced thin films having resistivity Ro in range of 5 to 48 Ohm (magnetron operating varied magnetic field). To measure resistance influenced the external magnetic field the thin film yields was put on the external magnetic field included four points probe system. The result showed that there was some changes of the resistances (Ro - R)/ Ro % between 10 to 14 % with error 7 - 10 %. (author)

  4. Systematic Surface Phase Transition of Ag Thin Films by Iodine Functionalization at Room Temperature: Evolution of Optoelectronic and Texture Properties

    OpenAIRE

    Bashouti, Muhammad Y.; Razieh Talebi; Thaer Kassar; Arashmid Nahal; Jürgen Ristein; Tobias Unruh; Christiansen, Silke H.

    2016-01-01

    We show a simple room temperature surface functionalization approach using iodine vapour to control a surface phase transition from cubic silver (Ag) of thin films into wurtzite silver-iodid (β-AgI) films. A combination of surface characterization techniques (optical, electronical and structural characterization) reveal distinct physical properties of the new surface phase. We discuss the AgI thin film formation dynamics and related transformation of physical properties by determining the wor...

  5. Patterned PPy Polymer and PPy/Ag Nanocomposites Thin Films by Photo-DLICVD

    OpenAIRE

    Manole, Claudiu Constantin; Maury, Francis; Demetrescu, Ioana

    2013-01-01

    This work deals with the deposition of both undoped (insulator) and extrinsically Ag-doped (conductive) polypyrrole (PPy) coatings by an original Photo-DLICVD process. The uniform and conformal coverage of PPy thin films on both Si(100) wafer and liquid micro-droplets forming blisters is investigated. A self-ordered surface patterning of the blisters is achieved and discussed in relation with the substrate nature. By changing the precursor chemistry in this CVD process, conductive PPy/Ag nano...

  6. The effect of AgNO3 concentration on formation of Ag nanoparticles in Sol-Gel derived Ag-SiO2 thin films

    Directory of Open Access Journals (Sweden)

    A Babapour

    2007-12-01

    Full Text Available   In this investigation, Ag-SiO2 thin films with different concentrations of Ag (0.2, 0.4, 1.6 and 8% has been fabricated on soda-lime glass substrate using sol-gel method. After an annealing process, physical and chemical properties of the deposited silica films containing Ag nanoparticles have been studied including optical, topographical structural, morphological and size of the nanoparticle as well as their distribution using UV-visble spectrophotometery, atomic force microscopy (AFM, scanning electron microscopy (SEM, and transmission electron microscopy (TEM techniques, respectively. Based on our data analysis, the Ag nanoparticles did not form in the samples with low (0.2% and high Ag concentrations (8%, without any suitable annealing process. Instead, the nanoparticles were formed easily for the intermediate Ag concentrations. In fact, for the the low and high Ag concentration, the Ag nanoparticles formed at the annealing temperature of 200 º C. In addition, according to TEM observations, the minimum average size of the synthesized particles were determined about 4 hm for the thin films containing 0.2% Ag concentration.

  7. Influence of the surface properties on bactericidal and fungicidal activity of magnetron sputtered Ti-Ag and Nb-Ag thin films.

    Science.gov (United States)

    Wojcieszak, D; Mazur, M; Kaczmarek, D; Mazur, P; Szponar, B; Domaradzki, J; Kepinski, L

    2016-05-01

    In this study the comparative investigations of structural, surface and bactericidal properties of Ti-Ag and Nb-Ag thin films have been carried out. Ti-Ag and Nb-Ag coatings were deposited on silicon and fused silica substrates by magnetron co-sputtering method using innovative multi-target apparatus. The physicochemical properties of prepared thin films were examined with the aid of X-ray diffraction, grazing incidence X-ray diffraction, scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy methods. Moreover, the wettability of the surface was determined. It was found that both, Ti-Ag and Nb-Ag thin films were nanocrystalline. In the case of Ag-Ti film presence of AgTi3 and Ag phases was identified, while in the structure of Nb-Ag only silver occurred in a crystal form. In both cases the average size of crystallites was ca. 11nm. Moreover, according to scanning electron microscopy and atomic force microscopy investigations the surface of Nb-Ag thin films was covered with Ag-agglomerates, while Ti-Ag surface was smooth and devoid of silver particles. Studies of biological activity of deposited coatings in contact with Bacillus subtilis, Pseudomonas aeruginosa, Enterococcus hirae, Klebisiella pneumoniae, Escherichia coli, Staphylococcus aureus and Candida albicans were performed. It was found that prepared coatings were bactericidal and fungicidal even in a short term-contact, i.e. after 2h. PMID:26952401

  8. L10-ordered high coercivity (FePt)Ag-C granular thin films for perpendicular recording

    International Nuclear Information System (INIS)

    We report (FePt)Ag-C granular thin films for potential applications to ultrahigh density perpendicular recording media, that were processed by co-sputtering FePt, Ag, and C targets on MgO underlayer deposited on thermally oxidized Si substrates. (FePt)1-xAgx-yvol%C (0oC. We found that the Ag additions improved the L10 ordering and the granular structure of the FePt-C films with the perpendicular coercivity ranging from 26 to 37 kOe for the particle size of 5-8 nm. The (FePt)0.9Ag0.1-50vol%C film showed the optimal magnetic properties as well as an appropriate granular morphology for recording media, i.e., average grain size of Dav=6.1 nm with the standard deviation of 1.8 nm.

  9. The role of Ag in (Ag,Cu)2ZnSnS4 thin film for solar cell application

    International Nuclear Information System (INIS)

    Highlights: • (Ag,Cu)2ZnSnS4 thin film was synthesized through metallic stacking layers. • Ag incorporation reduces the size and amount of voids at back contact. • Less planar defects and Cu vacancy are formed in the (Ag,Cu)2ZnSnS4. • Solar cell performance was improved with Ag incorporation. - Abstract: Recently, Ag incorporation into Cu(In,Ga)Se2 structure was found to benefit the solar cell performance. However, (Ag,Cu)2ZnSnS4 used as the solar cell absorber is not widely reported even though Ag2ZnSnS4 has shown much better photocatalysts activity for H2 evolution than Cu2ZnSnS4. In this paper, (Ag,Cu)2ZnSnS4 thin film solar cell was synthesized through sulfurization of Ag/Zn/Cu/Sn metallic stacked layers. In order to understand the actual role of Ag in the Cu2ZnSnS4 structure, the changing chemical environment, microstructure and intragrain defect due to the Ag incorporation, were studied by X-ray photoelectron spectroscopy and transmission electron microscopy. After sulfurization, Ag is uniformly distributed in the absorber and is incorporated into Cu2ZnSnS4 crystal structure but no obvious change of the Cu2ZnSnS4 chemical environment is detected. A large density of voids is formed at the Cu2ZnSnS4/Mo interface and some of these voids are found to be coated with CdS which is believed to be detrimental to Cu2ZnSnS4 device performance. In contrast, Ag incorporation reduces the size and amount of voids and thus effectively eliminates CdS deposited at back contact region. Moreover, fewer planar defects and Cu vacancies are formed in the (Ag,Cu)2ZnSnS4 sample than Cu2ZnSnS4 sample as suggested by electron diffraction patterns. Therefore, improved solar cell performance should result from the formation of (Ag,Cu)2ZnSnS4 structure

  10. Enhancement of light trapping in thin-film solar cells through Ag

    Institute of Scientific and Technical Information of China (English)

    Yiming Bai; Han Zhang; Jun Wang; Nuofu Chen; Jianxi Yao; Tianmao Huang; Xingwang Zhang; Zhigang Yin; Zhen Fu

    2011-01-01

    Forward-scattering efficiency (FSE) is first proposed when an Ag nanoparticle serves as the light-trapping structure for thin-film (TF) solar cells because the Ag nanoparticle's light-trapping efficiency lies on the light-scattering direction of metal nanoparticles. Based on FSE analysis of Ag nanoparticles with radii of 53 and 88 nm, the forward-scattering spectra and light-trapping efficiencies are calculated. The contributions of dipole and quadrupole modes to light-trapping effect are also analyzed quantitatively. When the surface coverage of Ag nanoparticles is 5%, light-trapping efficiencies are 15.5% and 32.3%, respectively, for 53- and 88-nm Ag nanoparticles. Results indicate that the plasmon quadrupole mode resonance of Ag nanoparticles could further enhance the light-trapping effect for TF solar cells.%@@ Forward-scattering efficiency (FSE) is first proposed when an Ag nanoparticle serves as the light-trapping structure for thin-film (TF) solar cells because the Ag nanoparticle's light-trapping efficiency lies on the light-scattering direction of metal nanoparticles.Based on FSE analysis of Ag nanoparticles with radii of 53 and 88 nm, the forward-scattering spectra and light-trapping efficiencies are calculated.The contributions of dipole and quadrupole modes to light-trapping effect are also analyzed quantitatively.When the surface coverage of Ag nanoparticles is 5%, light-trapping efficiencies are 15.5% and 32.3%, respectively, for 53- and 88-nm Ag nanoparticles.Results indicate that the plasmon quadrupole mode resonance of Ag nanoparticles could further enhance the light-trapping effect for TF solar cells.

  11. Si Underlayer Induced Nano-Ablation in AgInSbTe Thin Films

    Institute of Scientific and Technical Information of China (English)

    JIAO Xin-Bing; WEI Jing-Song; GAN Fu-Xi

    2008-01-01

    AgInSbTe/Si thin films on glass substrates are prepared by dc magnetron sputtering at room temperature.Using Si underlayer as the thermal diffusion layer,the super-resolution nano-ablation holes with a size of 70 nm in the AgInSbTe phase change films are obtained by a far-field focused laser experimental setup,with laser wavelength 405 nm and objective-lens numerical aperture D.90.The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.

  12. SPR sensitivity of silver nanorods in CsBr-Ag nanocomposite thin films

    Science.gov (United States)

    Lovkush; Ravikant, Chhaya; Arun, P.; Kumar, Kuldeep

    2016-07-01

    We have investigated the optical and morphological properties of CsBr-Ag complex thin films deposited by thermal evaporation on glass substrate. By varying the thickness of the film with fixed mass ratio of cesium bromide and silver, we observed a broad absorption peak in the visible region from 350 to 450 nm corresponding to the transverse and longitudinal surface plasmon resonance (SPR) mode. Red shift is observed, with varying film thickness, in SPR peak position corresponding to longitudinal mode with no significant change in transverse mode due to variation in the aspect ratio of the silver nano crystalline grains. Scanning electron microscope and EDX revealed the formation of silver nanorods in film samples. Such, stable and tunable CsBr-Ag films can be used in optical filters.

  13. Engineering of hydrophilic and plasmonic properties of Ag thin film by atom beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Udai B., E-mail: udaibhansingh123@gmail.com [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, Post Box - 10502, New Delhi, 110 067 (India); Agarwal, D.C.; Khan, S.A.; Kumar, Manish; Tripathi, A.; Singhal, R. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, Post Box - 10502, New Delhi, 110 067 (India); Panigrahi, B.K. [Material Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, Tamilnadu (India); Avasthi, D.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, Post Box - 10502, New Delhi, 110 067 (India)

    2011-12-01

    Hydrophilic Ag nanostructures were synthesized by physical vapour deposition of 5 nm Ag thin films followed by irradiation with 1.5 keV Ar atoms. Optical absorbance measurements show a characteristic surface plasmon resonance absorption band in visible region. A blue-shift in absorbance from 532 to 450 nm is observed with increasing fluence from 1 Multiplication-Sign 10{sup 16} to 3 Multiplication-Sign 10{sup 16} atoms/cm{sup 2}. Atomic force microscopy was performed for the pristine and irradiated samples to study the surface morphology. The atom beam irradiation induced sputtering and surface diffusion lead to the formation of plasmonic surface. Rutherford backscattering spectroscopy of the pristine and irradiated film indicates that metal content in the film decreases with ion fluence, which is attributed to the sputtering of Ag by Ar atoms. The contact angle measurement demonstrates the possibility of engineering the hydrophilicity by atom beam irradiation.

  14. Superhydrophobic Ag decorated ZnO nanostructured thin film as effective surface enhanced Raman scattering substrates

    Science.gov (United States)

    Jayram, Naidu Dhanpal; Sonia, S.; Poongodi, S.; Kumar, P. Suresh; Masuda, Yoshitake; Mangalaraj, D.; Ponpandian, N.; Viswanathan, C.

    2015-11-01

    The present work is an attempt to overcome the challenges in the fabrication of super hydrophobic silver decorated zinc oxide (ZnO) nanostructure thin films via thermal evaporation process. The ZnO nanowire thin films are prepared without any surface modification and show super hydrophobic nature with a contact angle of 163°. Silver is further deposited onto the ZnO nanowire to obtain nanoworm morphology. Silver decorated ZnO (Ag@ZnO) thin films are used as substrates for surface enhanced Raman spectroscopy (SERS) studies. The formation of randomly arranged nanowire and silver decorated nanoworm structure is confirmed using FESEM, HR-TEM and AFM analysis. Crystallinity and existence of Ag on ZnO are confirmed using XRD and XPS studies. A detailed growth mechanism is discussed for the formation of the nanowires from nanobeads based on various deposition times. The prepared SERS substrate reveals a reproducible enhancement of 3.082 × 107 M for Rhodamine 6G dye (R6G) for 10-10 molar concentration per liter. A higher order of SERS spectra is obtained for a contact angle of 155°. Thus the obtained thin films show the superhydrophobic nature with a highly enhanced Raman spectrum and act as SERS substrates. The present nanoworm morphology shows a new pathway for the construction of semiconductor thin films for plasmonic studies and challenges the orderly arranged ZnO nanorods, wires and other nano structure substrates used in SERS studies.

  15. Spectroscopic ellipsometry analysis of multilayered TiO{sub 2}-Ag thin films for photochromic application

    Energy Technology Data Exchange (ETDEWEB)

    Miao, L. [Materials R and D Laboratory, Japan Fine Ceramics Centre, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587 (Japan); Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Nengyuan Rd. Tianhe district, Guangzhou 510640 (China); Jiang, T.; Tanemura, M. [Department of Environmental Technology, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, S. [Materials R and D Laboratory, Japan Fine Ceramics Centre, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587 (Japan); Nabatova-Gabain, N. [HORIBA Ltd., 1-7-8 Higashi-kanda, Chiyoda-ku, Tokyo (Japan); Xu, G. [Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Nengyuan Rd. Tianhe district, Guangzhou 510640 (China)

    2008-05-15

    By altering the surrounding media of metal particles, the wavelength of surface plasma resonance can be tailored, which offers the potential for utilizing of plasma resonance related phenomenon, such as photochromism. Both sandwiched (TiO{sub 2}/Ag/TiO{sub 2}) and overcoated (TiO{sub 2}/Ag) films with different thicknesses were deposited on quartz substrate by rf helicon magnetron sputtering method. The structure of multilayered TiO{sub 2}-Ag films and the concentration of loaded metal Ag in each layer were determined by spectroscopic ellipsometry in high accuracy. The spectral dependent dielectric functions of each layer were obtained, which exhibited typical semiconductor TiO{sub 2}, metal Ag and mixture TiO{sub 2}-Ag behaviors, respectively. The surface plasma resonance peak was observed for several extremely thin mixture layers. The apparent redshift of SPR peak from 700 nm to 780 nm was happened with increasing of Ag amount from 35% to 50%. The broadening of SPR peak was found for layer 3 in sample 1 with low concentration Ag embedded in TiO{sub 2} media. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Synthesis and characterization of AgI thin films at low temperature

    International Nuclear Information System (INIS)

    The growth of AgI (silver iodide) thin films has been performed in aqueous medium using simple chemical method at room temperature (25 oC). Silver nitrate and potassium iodide have been used as source materials. Thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), surface photovoltage (SPV) and optical absorption spectroscopy. Glass and indium doped tin oxide (ITO) coated glass was used as substrates. The thin films were surface homogeneous with mixed β and γ-phases with surface roughness value of 21 nm. Optical transmission on glass exceeds 80% for 150 nm thick film with the direct band gap value of 2.85 eV. The change in crystal phases after transition temperature is studied by SPV measurements.

  17. Thin film Ag superlens towards lab-on-a-chip integration

    OpenAIRE

    Jeppesen, Claus; Nielsen, Rasmus Bundgaard; Boltasseva, Alexandra; Xiao, Sanshui; Mortensen, Asger; Kristensen, Anders

    2009-01-01

    A thin metal film near-field superlens, as originally suggested by Pendry and realized by Fang et al. and Melville et al., is investigated with emphasis on materials suitable for integration on a lab-on-a-chip platform. A chemically resistant cyclo-olefin copolymer (COC), mr-I-T85 from microresist technology, is applied as dielectric matrix/spacer for an Ag thin film superlens. The superlens successfully resolves 80 nm half-pitch gratings when illuminated with UV radiation at a free space wav...

  18. Thin film Ag superlens towards lab-on-a-chip integration.

    Science.gov (United States)

    Jeppesen, C; Nielsen, R B; Boltasseva, A; Xiao, S; Mortensen, N A; Kristensen, A

    2009-12-01

    A thin metal film near-field superlens, as originally suggested by Pendry and realized by Fang et al. and Melville et al., is investigated with emphasis on materials suitable for integration on a lab-on-a-chip platform. A chemically resistant cyclo-olefin copolymer (COC), mr-I-T85 from microresist technology, is applied as dielectric matrix/spacer for an Ag thin film superlens. The superlens successfully resolves 80 nm half-pitch gratings when illuminated with UV radiation at a free space wavelength of 365 nm. The superlens design, fabrication and characterization is discussed. PMID:20052179

  19. Thin film Ag superlens towards lab-on-a-chip integration

    DEFF Research Database (Denmark)

    Jeppesen, Claus; Nielsen, Rasmus Bundgaard; Boltasseva, Alexandra; Xiao, Sanshui; Mortensen, Asger; Kristensen, Anders

    2009-01-01

    A thin metal film near-field superlens, as originally suggested by Pendry and realized by Fang et al. and Melville et al., is investigated with emphasis on materials suitable for integration on a lab-on-a-chip platform. A chemically resistant cyclo-olefin copolymer (COC), mr-I-T85 from microresist...... technology, is applied as dielectric matrix/spacer for an Ag thin film superlens. The superlens successfully resolves 80 nm half-pitch gratings when illuminated with UV radiation at a free space wavelength of 365 nm. The superlens design, fabrication and characterization is discussed....

  20. Deposition of Pd–Ag thin film membranes on ceramic supports for hydrogen purification/separation

    Energy Technology Data Exchange (ETDEWEB)

    Pereira, A.I. [Centre of Physics, University of Minho, Campus Azurém, 4800-058 (Portugal); Pérez, P.; Rodrigues, S.C.; Mendes, A.; Madeira, L.M. [LEPAE, Chemical Engineering Department, Faculty of Engineering, University of Porto, Rua Dr. Roberto Frias s/n, 4200-465 Porto (Portugal); Tavares, C.J., E-mail: ctavares@fisica.uminho.pt [Centre of Physics, University of Minho, Campus Azurém, 4800-058 (Portugal)

    2015-01-15

    Highlights: • Thin film Pd–Ag membranes have been produced for hydrogen selectivity. • Magnetron sputtering yields Pd–Ag compact films for atomic H diffusion. • The thin film Pd–Ag membranes yielded a selectivity of α (H{sub 2}/N{sub 2}) = 10. - Abstract: Pd–Ag based membranes supported on porous α-Al{sub 2}O{sub 3} (doped with yttria-stabilized zirconia) were studied for hydrogen selective separation. Magnetron sputtering technique was employed for the synthesis of thin film membranes. The hydrogen permeation flux is affected by the membrane columnar structure, which is formed during deposition. From scanning electron microscopy analysis, it was observed that different sputtering deposition pressures lead to distinct columnar structure growth. X-ray diffraction patterns provided evidence of a Pd–Ag solid solution with an average crystallite domain size of 21 nm, whose preferential growth can be altered by the deposition pressure. The gas-permeation results have shown that the Pd–Ag membrane supported on porous α-Al{sub 2}O{sub 3} is selective toward H{sub 2}. For optimized membrane synthesis conditions, the permeance toward N{sub 2} is 0.076 × 10{sup −6} mol m{sup −2} s{sup −1} Pa{sup −1} at room temperature, whereas for a pressure difference of 300 kPa the H{sub 2}-flux is of the order of ca. 0.21 mol m{sup −2} s{sup −1}, which corresponds to a permeance of 0.71 × 10{sup −6} mol m{sup −2} s{sup −1} Pa{sup −1}, yielding a selectivity of α (H{sub 2}/N{sub 2}) = 10. These findings suggest that the membrane has a reasonable capacity to selectively permeate this gas.

  1. Structural study and fabrication of nano-pattern on ultra thin film of Ag grown by magnetron sputtering

    International Nuclear Information System (INIS)

    We present the structural study of ultra thin Ag films using grazing incidence x-ray reflectivity and the modification of these films with the tip of an atomic force microscope. Ag thin films are deposited using dc magnetron sputtering on a Si(001) substrate. Initially, the growth of the film is carpet like and above a certain thickness (∼42 A) the film structure changes to form mounds. This ultra thin film of Ag having carpet-like growth can be modified by the tip of an atomic force microscope, which occurs due to the porous nature of the film. A periodic pattern of nanometer dimensions has been fabricated on this film using the atomic force microscope tip. (author)

  2. Fabrication and properties of AgInTe2 thin films

    International Nuclear Information System (INIS)

    The results of studying the structure, composition and optical properties of thin films of the AgInTe2 ternary system, obtained through the method of pulsed laser evaporation, are presented for the first time. It is established, that the above films are characterized by chalcopyrite structure and their composition corresponds to the composition of crystals, used as a target. The interzone transition energies and values of crystalline and spin-orbital fission are calculated. The optical characteristics were determined from the equations for reflection and transmission in the air/film/glass substrate/air system

  3. Production of porous PTFE-Ag composite thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    The suitability of pulsed laser deposition technique for preparation of polytetrafluoroethylene (PTFE) and silver (Ag) composite thin films was demonstrated. Disk-shaped targets combined from silver and Teflon with various percentages were ablated with pulses of an ArF excimer laser. The chemical composition of the deposited layers was estimated based on deposition rates determined for the pure PTFE and Ag films. EDX and SEM analyses using secondary electron and backscattered electron images proved that the morphology of the layers is determined by the PTFE which is the main constituent and it is transferred mostly in form of grains and clusters forming a sponge-like structure with high specific surface. The Ag content is distributed over the surface of the PTFE structure. Contact angle measurements showed that with increasing the amount of Ag in the deposited layers the surface significantly enhanced the wetting properties. Conductivity experiments demonstrated that when the average silver content of the layers was increased from 0.16 to 3.28 wt% the resistance of our PTFE-Ag composite films decreased with about three orders of magnitudes (from ∼10 MΩ to ∼10 kΩ). The properties of these films suggest as being a good candidate for future electrochemical sensor applications.

  4. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Tamulevičius, Tomas, E-mail: Tomas.Tamulevicius@ktu.lt; Tamulevičienė, Asta; Virganavičius, Dainius; Vasiliauskas, Andrius; Kopustinskas, Vitoldas; Meškinis, Šarūnas; Tamulevičius, Sigitas

    2014-12-15

    Highlights: • CF{sub 4}/O{sub 2} dry etching of DLC:Ag films revealed the embedded Ag nanoparticles. • Plasma processed samples with more than 5 at.% Ag demonstrated Ostwald ripening. • 4 μm period patterns in aluminum and photoresist were imposed in the DLC:Ag film. • Different micro patterns are formed depending on the selected processing route. - Abstract: We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF{sub 4}/O{sub 2} plasma chemical etching and Ar{sup +} sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar{sup +} in C{sub 2}H{sub 2} gas atmosphere. Films with different silver content (0.6–12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet–visible light (UV–VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF{sub 4}/O{sub 2} mixture plasma for 2–6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C{sub 2}H{sub 2}/Ar ratio or during following plasma chemical etching. The plasma etching enabled to reveal the silver filler particle size distribution and to control silver content on the surface that was found to be dependent on Ostwald ripening process of silver nano-clusters. Employing contact lithography and 4 μm period mask in photoresist or aluminum the films were patterned employing CF{sub 4}/O{sub 2} mixture plasma chemical etching, direct Ar{sup +} sputtering or combined etching processes. It is shown that different processing recipes result in different final grating structures. Selective carbon etching in CF{sub 4}/O{sub 2} gas mixture with

  5. Structuring of DLC:Ag nanocomposite thin films employing plasma chemical etching and ion sputtering

    International Nuclear Information System (INIS)

    Highlights: • CF4/O2 dry etching of DLC:Ag films revealed the embedded Ag nanoparticles. • Plasma processed samples with more than 5 at.% Ag demonstrated Ostwald ripening. • 4 μm period patterns in aluminum and photoresist were imposed in the DLC:Ag film. • Different micro patterns are formed depending on the selected processing route. - Abstract: We analyze structuring effects of diamond like carbon based silver nanocomposite (DLC:Ag) thin films by CF4/O2 plasma chemical etching and Ar+ sputtering. DLC:Ag films were deposited employing unbalanced reactive magnetron sputtering of silver target with Ar+ in C2H2 gas atmosphere. Films with different silver content (0.6–12.9 at.%) were analyzed. The films (as deposited and exposed to plasma chemical etching) were characterized employing scanning electron microscopy and energy dispersive X-ray analysis (SEM/EDS), optical microscopy, ultraviolet–visible light (UV–VIS) spectroscopy and Fourier transform infrared (FTIR) spectroscopy. After deposition, the films were plasma chemically etched in CF4/O2 mixture plasma for 2–6 min. It is shown that optical properties of thin films and silver nano particle size distribution can be tailored during deposition changing the magnetron current and C2H2/Ar ratio or during following plasma chemical etching. The plasma etching enabled to reveal the silver filler particle size distribution and to control silver content on the surface that was found to be dependent on Ostwald ripening process of silver nano-clusters. Employing contact lithography and 4 μm period mask in photoresist or aluminum the films were patterned employing CF4/O2 mixture plasma chemical etching, direct Ar+ sputtering or combined etching processes. It is shown that different processing recipes result in different final grating structures. Selective carbon etching in CF4/O2 gas mixture with photoresist mask revealed micrometer range lines of silver nanoparticles, while Ar+ sputtering and combined

  6. Energy-saving spectrally-selective coatings based on MoO3/Ag thin films

    International Nuclear Information System (INIS)

    Graphical abstract: Transparent heat mirrors are multilayer structures that transmit light and reflect infrared radiation, thus conserving energy. In this work, this was achieved by deposition of molybdenum oxide thin films on top of silver layers. The silver layer provides the desired high infrared reflectance. The MoO3 thin film is a dielectric material characterized by wide band gap and high refractive index. It works as an antireflective layer, and thus provides the necessary high visible transparency. - Highlights: • Transparent heat mirrors transmit light and reflect infrared heat. • In this work, they were deposited using MoO3/Ag multilayer coatings. • The MoO3 films were smooth, had high refractive index, and wide bandgap. • The fabricated heat mirrors had high visible transparency and infrared reflection. - Abstract: Transparent heat mirrors are spectrally selective coatings that transmit light and reflect heat in the form of infrared radiation. In this work, these coatings were achieved by depositing a two-layer structure consisting of molybdenum oxide thin films deposited on silver thin films by thermal evaporation. First, the structural, chemical, and optical properties of molybdenum oxide thin films, that are relevant to their use in transparent heat mirrors, were investigated. Then, the optical properties of the two-layer structure were determined. Moreover, chemical depth profiling was carried out to investigate the spatial distribution of the elements among the layers. The deposited heat mirrors were found to exhibit the desired behavior of high visible transparency and high infrared reflection

  7. Thin film galvanic cell with RbAg4I5 solid electrolyte

    International Nuclear Information System (INIS)

    In order to decrease the size and weight and to increase the specific capacity and energy of galvanic cells, some solid electrolytes in the form of thin films are proposed. The galvanic cells were prepared by a combined method: the cathodic and anodic materials (Te and Ag) were evaporated under vacuo to cover an electrolyte layer, the latter being obtained by impregnating the porous materials with RbAg4I5 acetonic solution. The most specific charge curves of the galvanic cells at various current densities are given: specific energy of the samples was 0.2 to 0.7 watt-h/kg, their capacity being 0.1 to 0.2 mah. Behaviour of the cells when stored (that of Ag(RbAg4I5) interface in particular) was investigated, namely, the effect of the storage time on the capacity and internal resistance of the galvanic cell

  8. Combinatorial magnetron sputtering of AgFeO2 thin films with the delafossite structure

    OpenAIRE

    Mao, Fang; Nyberg, Tomas; Thersleff, Thomas; Andersson, Annam.; Jansson, Ulf

    2016-01-01

    The main objective of this study is to demonstrate the strength of the combinatorial approach to rapidly and effectively identify suitable process parameters for the synthesis of AgFeO2 filmswith layered delafossite structure. (00l)- textured delafossite AgFeO2 thin films have been successfully deposited for the first time without post-annealing by magnetron sputtering from elemental silver and iron targets in a reactive Ar-O-2 atmosphere. Gradient filmswith a wide composition range were depo...

  9. Characterization of Ag nanostructures fabricated by laser-induced dewetting of thin films

    Science.gov (United States)

    Nikov, Ru. G.; Nedyalkov, N. N.; Atanasov, P. A.; Hirsch, D.; Rauschenbach, B.; Grochowska, K.; Sliwinski, G.

    2016-06-01

    The paper presents results on laser nanostructuring of Ag thin films. The thin films are deposited on glass substrates by pulsed laser deposition technology. The as fabricated films are then annealed by nanosecond laser pulses delivered by Nd:YAG laser system operated at λ = 355 nm. The film modification is studied as a function of the film thickness and the parameters of the laser irradiation as pulse number and laser fluence. In order to estimate the influence of the environment on the characteristics of the fabricated structures the Ag films are annealed in different surrounding media: water, air and vacuum. It is found that at certain conditions the laser treatment may lead to decomposition of the films into a monolayer of nanoparticles with narrow size distribution. The optical properties of the fabricated nanostructures are investigated on the basis of transmission spectra taken by optical spectrometer. In the measured spectra plasmon resonance band is observed as its shape and position vary depending on the processing conditions. The fabricated structures are covered with Rhodamine 6G and tested as active substrates for Surface Enhanced Raman Spectroscopy (SERS).

  10. Influence of the additive Ag for crystallization of amorphous Ge-Sb-Te thin films

    International Nuclear Information System (INIS)

    We have investigated the optical and amorphous-to-crystalline transition properties in four-types of chalcogenide thin films; Ge2Sb2Te5, Ge8Sb2Te11, Ag-Ge2Sb2Te5 and Ag-Ge8Sb2Te11. Crystallization was caused by nano-pulse illumination (λ = 658 nm) with power (P) of 1-17 mW and pulse duration (t) of 10-460 ns, and the morphologies of crystallized spots were observed by SEM and microscope. It was found that the crystallized spot nearby linearly increases in size with increasing the illuminating energy (E = P · t) and eventually ablated out by over illumination. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-vis-IR spectrophotometer. In addition, a speed of amorphous-to-crystalline transition was evaluated by detecting the reflection response signals for the nano-pulse scanning. Conclusively, the Ge8Sb2Te11 film has a faster crystallization speed than the Ge2Sb2Te5 film despite its higher crystallization temperature. The crystallization speed was largely improved by adding Ag in Ge2Sb2Te5 film but not in Ge8Sb2Te11 film. To explain these results, we considered a heat confinement by electron hopping.

  11. Characterization of Ag-doped vanadium oxide (Ag{sub x}V{sub 2}O{sub 5}) thin film for cathode of thin film battery

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, H.S.; Lee, D.Y. [Korea Univ., Seoul (Korea). Div. of M.S.E.; Oh, S.H.; Kim, H.S.; Cho, W.I.; Cho, B.W. [Korea Inst. of Science and Technology, Seoul (Korea). Econ-nano Research Center

    2004-11-30

    The effect of silver co-sputtering on the characteristics of amorphous V{sub 2}O{sub 5} films, grown by dc reactive sputtering, is investigated. The co-sputtering process influences the growth mechanism as well as the characteristics of the V{sub 2}O{sub 5} films. X-ray diffraction (XRD), Inductively coupled plasma-atomic emission spectrometry (ICP-AES), field emission scanning electron microscopy (FE-SEM), Fourier transform infrared spectrometry (FT-IR) and X-ray photoelectron spectrometry (XPS) results indicate that the microstructure of the V{sub 2}O{sub 5} films is affected by the rf power of the co-sputtered silver. In addition, an all-solid-state thin film battery with full cell structure of Li/LiPON/Ag{sub x}V{sub 2}O{sub 5}/Pt has been fabricated. It is found that the silver co-sputtered V{sub 2}O{sub 5} cathode film exhibits better cycle performance than an undoped one.

  12. Morphology and N₂ Permeance of Sputtered Pd-Ag Ultra-Thin Film Membranes.

    Science.gov (United States)

    Fernandez, Ekain; Sanchez-Garcia, Jose Angel; Viviente, Jose Luis; van Sint Annaland, Martin; Gallucci, Fausto; Tanaka, David A Pacheco

    2016-01-01

    The influence of the temperature during the growth of Pd-Ag films by PVD magnetron sputtering onto polished silicon wafers was studied in order to avoid the effect of the support roughness on the layer growth. The surfaces of the Pd-Ag membrane films were analyzed by atomic force microscopy (AFM), and the results indicate an increase of the grain size from 120 to 250-270 nm and film surface roughness from 4-5 to 10-12 nm when increasing the temperature from around 360-510 K. After selecting the conditions for obtaining the smallest grain size onto silicon wafer, thin Pd-Ag (0.5-2-µm thick) films were deposited onto different types of porous supports to study the influence of the porous support, layer thickness and target power on the selective layer microstructure and membrane properties. The Pd-Ag layers deposited onto ZrO₂ 3-nm top layer supports (smallest pore size among all tested) present high N₂ permeance in the order of 10(-6) mol·m(-2)·s(-1)·Pa(-1) at room temperature. PMID:26875977

  13. Morphology and N2 Permeance of Sputtered Pd-Ag Ultra-Thin Film Membranes

    Directory of Open Access Journals (Sweden)

    Ekain Fernandez

    2016-02-01

    Full Text Available The influence of the temperature during the growth of Pd-Ag films by PVD magnetron sputtering onto polished silicon wafers was studied in order to avoid the effect of the support roughness on the layer growth. The surfaces of the Pd-Ag membrane films were analyzed by atomic force microscopy (AFM, and the results indicate an increase of the grain size from 120 to 250–270 nm and film surface roughness from 4–5 to 10–12 nm when increasing the temperature from around 360–510 K. After selecting the conditions for obtaining the smallest grain size onto silicon wafer, thin Pd-Ag (0.5–2-µm thick films were deposited onto different types of porous supports to study the influence of the porous support, layer thickness and target power on the selective layer microstructure and membrane properties. The Pd-Ag layers deposited onto ZrO2 3-nm top layer supports (smallest pore size among all tested present high N2 permeance in the order of 10−6 mol·m−2·s−1·Pa−1 at room temperature.

  14. Effects of thermal annealing on the magnetic interactions in nanogranular Fe-Ag thin films

    Energy Technology Data Exchange (ETDEWEB)

    Alonso, J.; Fdez-Gubieda, M.L.; Svalov, A. [Departamento de Electricidad y Electronica, Universidad del Pais Vasco (UPV/EHU), Campus de Leioa, 48940 Leioa (Spain); Meneghini, C. [Dipartimento di Fisica ' E. Amaldi' , Universita degli Studi Roma Tre, 00146 Roma (Italy); Orue, I. [SGIker, Universidad del Pais Vasco (UPV/EHU), Campus de Leioa, 48940 Leioa (Spain)

    2012-09-25

    Highlights: Black-Right-Pointing-Pointer Fe{sub x}Ag{sub 100-x} granular thin films with competing interactions (25 {<=} x{<=} 35). Black-Right-Pointing-Pointer Annealing up to 200 Degree-Sign C mainly modifies the interface of Fe nanoparticles. Black-Right-Pointing-Pointer Annealing reduces RKKY interactions in Fe{sub 25}Ag{sub 75}. Black-Right-Pointing-Pointer Annealing favors exchange interactions and ferromagnetic order in Fe{sub 35}Ag{sub 65}. - Abstract: In this paper we have studied, by analysing the evolution of the magnetic behaviour during thermal treatment, the role of the interparticle magnetic interactions in Fe{sub x}Ag{sub 100-x} granular thin films prepared by sputtering deposition technique. Two compositions have been selected: x = 25 and 35, below and around the magnetic percolation of the system, respectively, according to our previous works. The structure of these thin films has been studied by X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) measurements. To analyse the magnetic behaviour, DC magnetic measurements have been carried out after progressively annealing the samples at different temperatures (0 {<=} T{sub ann} {<=} 200 Degree-Sign C). These measurements have revealed that, upon thermal treatment, the frustrated state at low temperatures (T < 80 K) for the x = 25 sample tends to disappear, probably due to the weakening of RKKY interactions after the segregation of soluted Fe atoms in the Ag matrix. However, dipolar interactions are not affected by the annealing. On the contrary, at x = 35, around the magnetic percolation, the annealing gives rise to an increasingly ordered interface, thereby enhancing the transfer of the direct exchange interactions.

  15. Optical and electrical characterization of AgInS{sub 2} thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Calixto-Rodriguez, M., E-mail: manuela@fis.unam.mx [Instituto de Ciencias Fisicas-Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Martinez, H. [Instituto de Ciencias Fisicas-Universidad Nacional Autonoma de Mexico, Apartado Postal 48-3, 62210, Cuernavaca, Morelos (Mexico); Calixto, M.E. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apartado Postal J-48, 72570, Puebla, Puebla (Mexico); Pena, Y. [Facultad de Ciencias Quimicas, Universidad Autonoma de Nuevo Leon, Pedro de Alba s/n, Ciudad Universitaria, 66451, San Nicolas de los Garza, Nuevo Leon (Mexico); Martinez-Escobar, Dalia [Centro de Investigacion en Energia-Universidad Nacional Autonoma de Mexico, 62580, Temixco, Morelos (Mexico); Tiburcio-Silver, A. [Instituto Tecnologico de Toluca-SEP, Apartado Postal 20, 52176, Metepec 3, Estado de Mexico (Mexico); Sanchez-Juarez, A. [Centro de Investigacion en Energia-Universidad Nacional Autonoma de Mexico, 62580, Temixco, Morelos (Mexico)

    2010-10-25

    Silver indium sulfide (AgInS{sub 2}) thin films have been prepared by spray pyrolysis (SP) technique using silver acetate, indium acetate, and N, N-dimethylthiourea as precursor compounds. Films were deposited onto glass substrates at different substrate temperatures (T{sub s}) and Ag:In:S ratios in the starting solutions. Optical transmission and reflection as well as electrical measurements were performed in order to study the effect of deposition parameters on the optical and electrical properties of AgInS{sub 2} thin films. X-ray diffraction measurements were used to identify the deposited compounds. It was found that different compounds such as AgInS{sub 2}, Ag{sub 2}S, In{sub 2}O{sub 3}, and In{sub 2}S{sub 3} can be grown only by changing the Ag:In:S ratio in the starting solution and T{sub s}. So that, by carefully selecting the deposition parameters, single phase AgInS{sub 2} thin films can be easily grown. Thin films obtained using a molar ratio of Ag:In:S = 1:1:2 and T{sub s} = 400 {sup o}C, have an optical band gap of 1.9 eV and n-type electrical conductivity with a value of 0.3 {Omega}{sup -1} cm{sup -1} in the dark.

  16. Synthesis of Ag-TiO2 composite nano thin film for antimicrobial application

    International Nuclear Information System (INIS)

    TiO2 photocatalysts have been found to kill cancer cells, bacteria and viruses under mild UV illumination, which offers numerous potential applications. On the other hand, Ag has long been proved as a good antibacterial material as well. The advantage of Ag-TiO2 nanocomposite is to expand the nanomaterial's antibacterial function to a broader range of working conditions. In this study neat TiO2 and Ag-TiO2 composite nanofilms were successfully prepared on silicon wafer via the sol-gel method by the spin-coating technique. The as-prepared composite Ag-TiO2 and TiO2 films with different silver content were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) to determine the topologies, microstructures and chemical compositions, respectively. It was found that the silver nanoparticles were uniformly distributed and strongly attached to the mesoporous TiO2 matrix. The morphology of the composite film could be controlled by simply tuning the molar ratio of the silver nitrate aqueous solution. XPS results confirmed that the Ag was in the Ag0 state. The antimicrobial effect of the synthesized nanofilms was carried out against gram-negative bacteria (Escherichia coli ATCC 29425) by using an 8 W UV lamp with a constant relative intensity of 0.6 mW cm-2 and in the dark respectively. The synthesized Ag-TiO2 thin films showed enhanced bactericidal activities compared to the neat TiO2 nanofilm both in the dark and under UV illumination.

  17. Electrical Properties of Al, Ag, Cu, Ti and SS Thin Film for Electrode of Solar Cell

    International Nuclear Information System (INIS)

    The Al, Ag, Cu, Ti and SS materials were deposited on the surface of glass substrate using plasma DC sputtering technique. The deposition process was done with the following plasma parameters : deposition time, gas pressure and substrate temperature with the aim to obtain a good conductance of thin films. Variation of substrate deposition time was 1 - 15 minutes, gas pressure was 5x10-2 - 7x10-2 torr and of temperature was 100 - 300 oC. The resistance measurement has been done by four points probes and the conductivity was calculated using mathematic formulation. It was obtained that the minimum resistance in the order of R = 0.07 Ω, was found at Ag materials and this was obtained at the following plasma parameters : deposition time 15 minutes, gas pressure 6x10-2 torr and temperature 300 oC, while, the resistance of : Cu, Al, Ti and SS materials were R = 0.13 Ω, R = 450 Ω, R = 633 Ω, R = 911 Ω respectively, It could be concluded that the Ag thin film has a minimum resistance, high conductivity compared to the other materials Al, Cu, Ti and SS. Ag is therefore the suitable material for applying as electrode of solar cell. (author)

  18. Systematic Surface Phase Transition of Ag Thin Films by Iodine Functionalization at Room Temperature: Evolution of Optoelectronic and Texture Properties.

    Science.gov (United States)

    Bashouti, Muhammad Y; Talebi, Razieh; Kassar, Thaer; Nahal, Arashmid; Ristein, Jürgen; Unruh, Tobias; Christiansen, Silke H

    2016-01-01

    We show a simple room temperature surface functionalization approach using iodine vapour to control a surface phase transition from cubic silver (Ag) of thin films into wurtzite silver-iodid (β-AgI) films. A combination of surface characterization techniques (optical, electronical and structural characterization) reveal distinct physical properties of the new surface phase. We discuss the AgI thin film formation dynamics and related transformation of physical properties by determining the work-function, dielectric constant and pyroelectric behavior together with morphological and structural thin film properties such as layer thickness, grain structure and texture formation. Notable results are: (i) a remarkable increase of the work-function (by 0.9 eV) of the Ag thin layer after short a iodine exposure time (≤60 s), with simultaneous increase of the thin film transparency (by two orders of magnitude), (ii) pinning of the Fermi level at the valance band maximum upon iodine functionalization, (iii) 84% of all crystallites grain were aligned as a result of the evolution of an internal electric field. Realizing a nano-scale layer stack composed of a dielectric AgI layer on top of a metallic thin Ag layer with such a simple method has some technological implications e.g. to realize optical elements such as planar optical waveguides. PMID:26899434

  19. Preparation of nano-Ag/TiO2 thin-film

    Institute of Scientific and Technical Information of China (English)

    PENG Bing; WANG Jia; CHAI Li-yuan; MAO Ai-li; WANG Yun-yan

    2008-01-01

    Steady TiO2 water-sol was prepared by peptization and the effects of pH value, temperature, concentration of colloid and peptizator on sol were investigated. Laser grain analyzer was used to verify nano-particles in the sol. The photocatalytic degradation ratio and antibacterial property of nano-Ag/TiO2 thin-film on ceramics were used as the main index in addition to XRD analysis. The effect of film layers, embedding Ag+, annealing temperature and time on the degradation ratio and antibacterial property was studied. The temperature 30-80 ℃, pH 1.2-2.0, concentrations of 0.05-0.3 mol/L sol and 5% HNO3 would be the optimal parameters for the TiO2 water-sol preparation. The nano-Ag/TiO2 film of three layers with 3% AgNO3 embedded and treated at 350 ℃ for 2 h exhibits good performance. The elementary research on the kinetics of degradation shows that the reactions are on the first order kinetics equation.

  20. Thermal stability and partial dewetting of crystalline organic thin films: 3,4,9,10-perylenetetracarboxylic dianhydride on Ag(111)

    OpenAIRE

    Krause, B.; Dürr, A. C.; Schreiber, F.; Dosch, H.; Seeck, O

    2003-01-01

    The thermal stability and dewetting effects of crystalline organic thin films on inorganic substrates have been investigated for a model system for organic epitaxy, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) on Ag(111). The thin films deposited under a variety of growth conditions have been annealed stepwise and studied by in situ x-ray diffraction and noncontact atomic force microscopy. It has been found that comparatively smooth films deposited at temperatures T(g)less than or sim...

  1. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  2. Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

    International Nuclear Information System (INIS)

    Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (106 Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (103 Ω cm) against a 20% cut in optical transmission

  3. Effect of Ag doping on opto-electrical properties of CdS thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Nazir, Adnan, E-mail: adnan.nazir@iit.it [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Toma, Andrea [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Shah, Nazar Abbas [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Panaro, Simone [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Butt, Sajid [Department of Materials Science and Engineering, Institute of Space Technology (IST), Islamabad 44000 (Pakistan); School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Sagar, Rizwan ur Rehman [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Raja, Waseem [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Rasool, Kamran [Micro and Nano Devices Group, Department of Metallurgy and Materials Engineering Pakistan, Institute of Engineering and Applied Sciences (PIEAS), P.O. Nilore, Islamabad 45650 (Pakistan); Maqsood, Asghari [Department of Physics, Air University, Islamabad (Pakistan)

    2014-10-01

    Highlights: • Polycrystalline CdS thin films are fabricated by means of Close Spaced Sublimation technique. • Ag is doped by simple ion-exchange technique in order to reduce resistivity of CdS thin films. • Remarkable reduction in resistivity without introducing many transparency losses. - Abstract: Cadmium sulfide (CdS) polycrystalline thin films of different thicknesses (ranging from 370 nm to 750 nm) were fabricated on corning glass substrates using Close Spaced Sublimation (CSS) technique. Optical and electrical investigation revealed that CdS thin films show an appreciable transparency (50–70% transmission) in visible range and a highly resistive behavior (10{sup 6} Ω cm). Samples were doped by silver (Ag) at different concentrations, using ion exchange technique, in order to reduce the resistivity of CdS thin films and to improve their efficiency as a window layer for solar cell application. The doping of Ag in pure CdS thin films resulted into an increase of surface roughness and a decrease both in electrical resistivity and in transparency. By optimizing annealing parameters, we were able to properly control the optical properties of the present system. In fact, the Ag doping of pure CdS films has led to a decrease of the sample resistivity by three orders of magnitude (10{sup 3} Ω cm) against a 20% cut in optical transmission.

  4. Optical properties of TiO2 thin films after Ag ion implantation

    International Nuclear Information System (INIS)

    Metal plasma ion implantation has being successfully developed for improving the electronic and optical properties of semiconductor materials. Prior to deposition, a TiO2 colloidal suspension was synthesized by microwave-induced thermal hydrolysis of the titanium tetrachloride aqueous solution. The TiO2 thin film was optimized to obtain a high-purity crystalline anatase phase by calcinations at 550 deg. C. The TiO2 coating was uniform without aggregation, which provided good photo conversion efficiency. Ag ion implantation into the as-calcined TiO2 thin films was conducted with 1 x 1015 ∼ 1 x 1016 ions/cm2 at 40 keV. The peak position and intensity of the photoluminescence and UV-Vis absorption spectra are quite sensitive to Ag doping. The optical characterization showed a shift in optical absorption wavelength towards infrared ray side, which was correlated with the structure variation of the Ag+ implanted TiO2. Due to the strong capability of forming compounds between the energetic silver ions and TiO2, the photoluminescence emission and UV-Vis absorption efficiencies were improved.

  5. Speciation and Lability of Ag-, AgCl- and Ag2S-Nanoparticles in Soil Determined by X-ray Absorption Spectroscopy and Diffusive Gradients in Thin Films

    Science.gov (United States)

    Long-term speciation and lability of silver (Ag-), silver chloride (AgCl-) and silver sulfide nanoparticles (Ag2S-NPs) in soil were studied by X-ray absorption spectroscopy (XAS), and newly developed "nano" Diffusive Gradients in Thin Films (DGT) devices. These nano-D...

  6. Synthesis and Characterization of Varying Concentrations of Ag-doped ZnO Thin Films

    Science.gov (United States)

    Hachlica, Justin; Wadie-Ibrahim, Patrick; Sahiner, M. Alper

    Silver doped ZnO is a promising compound for photovoltaic solar cell use. Doping this compound with varying amounts of silver will theoretically make this type of thin film more efficient by reducing the overall resistance and increasing the voltage and current output. The extent of this promise is being tested experimentally, by analysis of both the electrical and the surface roughness properties of the cells. Ag-doped Zinc Oxide is deposited by method of Pulsed Laser Deposition (PLD) onto Indium Tin Oxide (ITO) coated Glass. Annealing effects were also observed by varying the temperature at which the annealing occurred after synthesis of the sample. Thickness is confirmed by use of Ellipsometery. X-Ray Diffraction (XRD) measurements confirmed a ZnO crystal structure on the thin films. The active dopant carrier concentrations were determined using a Hall Effect Measuring System. Finally, the photovoltaic properties of the film are recorded by using a Keithley Source Meter. The structural characterization and electrical results of the effect of Ag doping on ZnO will then be discussed.

  7. Influence of the additive Ag for crystallization of amorphous Ge-Sb-Te thin films

    Energy Technology Data Exchange (ETDEWEB)

    Song, Ki-Ho; Kim, Sung-Won; Seo, Jae-Hee [Faculty of Applied Chemical Engineering, Chonnam National University, 300 Yongbong-dong, Kwangju 500-757 (Korea, Republic of); Lee, Hyun-Yong, E-mail: hyleee@chonnam.ac.k [Faculty of Applied Chemical Engineering, Chonnam National University, 300 Yongbong-dong, Kwangju 500-757 (Korea, Republic of)

    2009-05-29

    We have investigated the optical and amorphous-to-crystalline transition properties in four-types of chalcogenide thin films; Ge{sub 2}Sb{sub 2}Te{sub 5}, Ge{sub 8}Sb{sub 2}Te{sub 11}, Ag-Ge{sub 2}Sb{sub 2}Te{sub 5} and Ag-Ge{sub 8}Sb{sub 2}Te{sub 11}. Crystallization was caused by nano-pulse illumination ({lambda} = 658 nm) with power (P) of 1-17 mW and pulse duration (t) of 10-460 ns, and the morphologies of crystallized spots were observed by SEM and microscope. It was found that the crystallized spot nearby linearly increases in size with increasing the illuminating energy (E = P {center_dot} t) and eventually ablated out by over illumination. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-vis-IR spectrophotometer. In addition, a speed of amorphous-to-crystalline transition was evaluated by detecting the reflection response signals for the nano-pulse scanning. Conclusively, the Ge{sub 8}Sb{sub 2}Te{sub 11} film has a faster crystallization speed than the Ge{sub 2}Sb{sub 2}Te{sub 5} film despite its higher crystallization temperature. The crystallization speed was largely improved by adding Ag in Ge{sub 2}Sb{sub 2}Te{sub 5} film but not in Ge{sub 8}Sb{sub 2}Te{sub 11} film. To explain these results, we considered a heat confinement by electron hopping.

  8. Synthesis of AgInSnS4 thin films by adding tin (Sn) into the chalcopyrite structure of AgInS2 using spray pyrolysis

    International Nuclear Information System (INIS)

    AgInSnS4 thin films were prepared by adding a tin salt to the starting solution used for preparing chalcopyrite AgInS2 thin films by spray pyrolysis The AgInSnS4 films were grown at substrate temperatures in the 300-400 oC range, using an alcoholic solution comprised of silver acetate, indium chloride, tin chloride and thiourea. The tin chloride content in the starting solution was gradually varied in terms of the molar ratio x = [Sn]/([S] + [Ag]) from 0 to 0.5 to obtain Sn-doped chalcopyrite AgInS2 (x 4 (x = 0.2-0.4). X-ray diffraction studies indicated that AgInSnS4 has a cubic spinel-like structure with lattice parameter of 10.77 A. All AgInSnS4 thin films exhibited p-type conduction, and their room temperature conductivity ranged from 10-1 to 10-2 S/cm. The conductivity versus 1/T plots for this material showed an Arrhenius-like behavior, from which two activation energies of Ea1 = 0.23-0.40 eV and Ea2 = 0.07-0.20 eV were determined. These results suggest that the grain boundary scattering and the ionization of shallow acceptors dominate the charge carrier transport in the sprayed AgInSnS4 thin films. The AgInSnS4 absorption spectrum revealed an energy gap around Eg = 1.89 eV, which was associated to direct-allowed transitions. To our knowledge, the quaternary compound has been prepared for the first time using spray pyrolysis.

  9. Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing

    International Nuclear Information System (INIS)

    Highlights: ► We obtained polycrystalline silver indium sulfide thin films through the annealing of chemically deposited In2S3–Ag2S films. ► According to XRD chalcopyrite structure of AgInS2 was obtained. ► AgInS2 thin film has a band gap of 1.86 eV and a conductivity value of 1.2 × 10−3 (Ω cm)−1. - Abstract: AgInS2 thin films were obtained by the annealing of chemical bath deposited In2S3–Ag2S layers at 400 °C in N2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS2 has been obtained. These films have an optical band gap, Eg, of 1.86 eV and an electrical conductivity value of 1.2 × 10−3 (Ω cm)−1.

  10. Microwave sintering of Ag-nanoparticle thin films on a polyimide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Fujii, S., E-mail: fujii.s.ap@m.titech.ac.jp [Department of Applied Chemistry, Tokyo Institute of Technology, Tokyo 152-8522 (Japan); Department of Information and Communication System Engineering, National Institute of Technology, Okinawa College, Nago, Okinawa 905-2192 (Japan); Kawamura, S.; Maitani, M. M.; Suzuki, E.; Wada, Y. [Department of Applied Chemistry, Tokyo Institute of Technology, Tokyo 152-8522 (Japan); Mochizuki, D. [Interdisciplinary Cluster for Cutting Edge Research, Center for Energy and Environmental Science, Shinshu University, Ueda, Nagano 386-8567 (Japan)

    2015-12-15

    Ag-nanoparticle thin films on a polyimide substrate were subjected to microwave sintering by use of a single-mode waveguide applicator. A two-step sintering process was employed. First, at low conductivities of the film, the film sample was placed at the site of the maximum electric field and subjected to microwave irradiation. Second, when the conductivity of the film increased, the film sample was placed at the site of the maximum magnetic field and again subjected to microwave irradiation. The microwave sintering process was completed within 1.5 min, which is significantly lower than the time required for the oven heating process. The resulting conductivity of the film, albeit only 30% of that of the bulk material, was seven times that of a film annealed at the same temperature in a furnace. Scanning electron microscopy images revealed that the nanoparticles underwent both grain necking and grain growth during microwave sintering. In addition, this sintering process was equivalent to the oven heating process performed at a 50 °C higher annealing temperature. An electromagnetic wave simulation and a heat transfer simulation of the microwave sintering process were performed to gain a thorough understanding of the process.

  11. Microwave sintering of Ag-nanoparticle thin films on a polyimide substrate

    International Nuclear Information System (INIS)

    Ag-nanoparticle thin films on a polyimide substrate were subjected to microwave sintering by use of a single-mode waveguide applicator. A two-step sintering process was employed. First, at low conductivities of the film, the film sample was placed at the site of the maximum electric field and subjected to microwave irradiation. Second, when the conductivity of the film increased, the film sample was placed at the site of the maximum magnetic field and again subjected to microwave irradiation. The microwave sintering process was completed within 1.5 min, which is significantly lower than the time required for the oven heating process. The resulting conductivity of the film, albeit only 30% of that of the bulk material, was seven times that of a film annealed at the same temperature in a furnace. Scanning electron microscopy images revealed that the nanoparticles underwent both grain necking and grain growth during microwave sintering. In addition, this sintering process was equivalent to the oven heating process performed at a 50 °C higher annealing temperature. An electromagnetic wave simulation and a heat transfer simulation of the microwave sintering process were performed to gain a thorough understanding of the process

  12. Microwave sintering of Ag-nanoparticle thin films on a polyimide substrate

    Directory of Open Access Journals (Sweden)

    S. Fujii

    2015-12-01

    Full Text Available Ag-nanoparticle thin films on a polyimide substrate were subjected to microwave sintering by use of a single-mode waveguide applicator. A two-step sintering process was employed. First, at low conductivities of the film, the film sample was placed at the site of the maximum electric field and subjected to microwave irradiation. Second, when the conductivity of the film increased, the film sample was placed at the site of the maximum magnetic field and again subjected to microwave irradiation. The microwave sintering process was completed within 1.5 min, which is significantly lower than the time required for the oven heating process. The resulting conductivity of the film, albeit only 30% of that of the bulk material, was seven times that of a film annealed at the same temperature in a furnace. Scanning electron microscopy images revealed that the nanoparticles underwent both grain necking and grain growth during microwave sintering. In addition, this sintering process was equivalent to the oven heating process performed at a 50 °C higher annealing temperature. An electromagnetic wave simulation and a heat transfer simulation of the microwave sintering process were performed to gain a thorough understanding of the process.

  13. Preparation and characterization of double layer thin films ZnO/ZnO:Ag for methylene blue photodegradation

    Energy Technology Data Exchange (ETDEWEB)

    Wibowo, Singgih, E-mail: singgih@st.fisika.undip.ac.id; Sutanto, Heri, E-mail: herisutanto@undip.ac.id [Department of Physics, Faculty of Science and Mathematics, Diponegoro University (Indonesia)

    2016-02-08

    Double layer (DL) thin films of zinc oxide and silver-doped zinc oxide (ZnO/ZnO:Ag) were deposited on glass substrate by sol-gel spray coating technique. The prepared thin films were subjected for optical and photocatalytic studies. UV-visible transmission spectra shows that the subtitution of Ag in ZnO leads to band gap reduction. The influence of Ag doping on the photocatalytic activity of ZnO for the degradation of methylene blue dye was studied under solar radiation. The light absorption over an extended visible region by Ag ion doping in ZnO film contributed equally to improve the photocatalytic activity up to 98.29%.

  14. Preparation and characterization of double layer thin films ZnO/ZnO:Ag for methylene blue photodegradation

    International Nuclear Information System (INIS)

    Double layer (DL) thin films of zinc oxide and silver-doped zinc oxide (ZnO/ZnO:Ag) were deposited on glass substrate by sol-gel spray coating technique. The prepared thin films were subjected for optical and photocatalytic studies. UV-visible transmission spectra shows that the subtitution of Ag in ZnO leads to band gap reduction. The influence of Ag doping on the photocatalytic activity of ZnO for the degradation of methylene blue dye was studied under solar radiation. The light absorption over an extended visible region by Ag ion doping in ZnO film contributed equally to improve the photocatalytic activity up to 98.29%

  15. A dry method to synthesize dendritic Ag2Se nanostructures utilizing CdSe quantum dots and Ag thin films

    Science.gov (United States)

    Hu, Lian; Zhang, Bingpo; Xu, Tianning; Li, Ruifeng; Wu, Huizhen

    2015-01-01

    Dendritic Ag2Se nanostructures are synthesized in a dry environment by UV irradiating the hybrids composed of CdSe quantum dots (QDs) and silver (Ag). UV irradiation on CdSe QDs induces a photooxidation effect on the QD surface and leads to the formation of SeO2 components. Then SeO2 reacts with the Ag atoms in either Ag film or QD layer to produce the Ag2Se. The growth mechanism of Ag2Se dendrites on solid Ag films is explored and explained by a diffusion limited aggregation model in which the QD layer provides enough freedom for Ag2Se motion. Since the oxidation of the CdSe QDs is the critical step for the Ag2Se dendrites formation this dry chemical interaction between QDs and Ag film can be applied in the study of the QD surface chemical properties. With this dry synthesis method, the Ag2Se dendrites can also be facilely formed at the designed area on Ag substrates.

  16. Nano-crystalline Ag-PbTe thermoelectric thin films by a multi-target PLD system

    Science.gov (United States)

    Cappelli, E.; Bellucci, A.; Medici, L.; Mezzi, A.; Kaciulis, S.; Fumagalli, F.; Di Fonzo, F.; Trucchi, D. M.

    2015-05-01

    It has been evaluated the ability of ArF pulsed laser ablation to grow nano-crystalline thin films of high temperature PbTe thermoelectric material, and to obtain a uniform and controlled Ag blending, through the entire thickness of the film, using a multi-target system in vacuum. The substrate used was a mirror polished technical alumina slab. The increasing atomic percentage of Ag effect on physical-chemical and electronic properties was evaluated in the range 300-575 K. The stoichiometry and the distribution of the Ag component, over the whole thickness of the samples deposited, have been studied by XPS (X-ray photoelectron spectroscopy) and corresponding depth profiles. The crystallographic structure of the film was analyzed by grazing incidence X-ray diffraction (GI-XRD) system. Scherrer analysis for crystallite size shows the presence of nano-structures, of the order of 30-35 nm. Electrical resistivity of the samples, studied by the four point probe method, as a function of increasing Ag content, shows a typical semi-conductor behavior. From conductivity values, carrier concentration and Seebeck parameter determination, the power factor of deposited films was calculated. Both XPS, Hall mobility and Seebeck analysis seem to indicate a limit value to the Ag solubility of the order of 5%, for thin films of ∼200 nm thickness, deposited at 350 °C. These data resulted to be comparable to theoretical evaluation for thin films but order of magnitude lower than the corresponding bulk materials.

  17. Theory and practical considerations of multilayer dielectric thin-film stacks in Ag-coated hollow waveguides.

    Science.gov (United States)

    Bledt, Carlos M; Melzer, Jeffrey E; Harrington, James A

    2014-02-01

    This analysis explores the theory and design of dielectric multilayer reflection-enhancing thin film stacks based on high and low refractive index alternating layers of cadmium sulfide (CdS) and lead sulfide (PbS) on silver (Ag)-coated hollow glass waveguides (HGWs) for low loss transmission at midinfrared wavelengths. The fundamentals for determining propagation losses in such multilayer thin-film-coated Ag hollow waveguides is thoroughly discussed, and forms the basis for further theoretical analysis presented in this study. The effects on propagation loss resulting from several key parameters of these multilayer thin film stacks is further explored in order to bridge the gap between results predicted through calculation under ideal conditions and deviations from such ideal models that often arise in practice. In particular, the effects on loss due to the number of dielectric thin film layers deposited, deviation from ideal individual layer thicknesses, and surface roughness related scattering losses are presented and thoroughly investigated. Through such extensive theoretical analysis the level of understanding of the underlying loss mechanisms of multilayer thin-film Ag-coated HGWs is greatly advanced, considerably increasing the potential practical development of next-generation ultralow-loss mid-IR Ag/multilayer dielectric-coated HGWs. PMID:24514252

  18. Effect of additional element and heat treating temperature on micro-structure and mechanical behavior of Ag alloy thin film

    Institute of Scientific and Technical Information of China (English)

    JU Dong-ying; ISHIGURO S; ARIZONO T; HASEGAWA K

    2006-01-01

    For Ag alloy film used for the storage media,it is required to have heat-resistance,anti-constant temperature and anti-constant humidity characteristics,corrosion resistance,while high reflectivity over Al is maintained. An Ag alloy thin film (additive element Pd,Cu,P) was created on glass substrates,and various heat treatment was conducted. Then,fine structure was observed on this thin film using AFM,and fine structure evaluation of the inside was carried out by the in-plane diffractometry and X-ray diffractometry,and in addition,residual stress analysis was carried out. These results were compared and were examined,and fine structure and physical property in a metallic thin film were evaluated,and usefulness of evaluation method was verified.

  19. Collective magnetic behaviors of Fe-Ag nanostructured thin films above the percolation limit

    International Nuclear Information System (INIS)

    The magnetic behavior of sputtered and pulsed laser deposited (PLD) FexAg100-x thin films with 27≤x≤55 has been studied by means of ac and dc magnetic measurements. Sputtered samples present a continuous decrease in the magnetization, down to 310 K for x=30, where a magnetic transition into a superparamagnetic state with the presence of dipolar interactions is observed. The ac susceptibility measurements indicate that this transition resembles that of three dimensional glassy systems. Sputtered samples with higher concentration of Fe present a similar but slower thermal evolution of magnetization. PLD samples with x≥50 show a Curie-Weiss-type transition above ∼200 K triggered by direct exchange interactions. As the temperature decreases, the system behaves like a ferromagnet and below ∼75 K, a transition into a cluster-glass state appears. As the composition decreases, these phenomena vanish

  20. Development of Ag/WO3/ITO thin film memristor using spray pyrolysis method

    Science.gov (United States)

    Dongale, T. D.; Mohite, S. V.; Bagade, A. A.; Gaikwad, P. K.; Patil, P. S.; Kamat, R. K.; Rajpure, K. Y.

    2015-11-01

    The unique nonlinear relationship between charge and magnetic flux along with the pinched hysteresis loop in I- V plane provide memory with resistance combinations of attribute to Memristor which lead to their novel applications in non volatile memory, nonlinear dynamics, analog computations and neuromorphic biological systems etc. The present paper reports development of Ag/WO3/ITO thin film memristor device using spray pyrolysis method. The structural, morphological and electrical properties of the thin film memristor device are further characterized using x-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and semiconductor device analyzer. The memristor is simulated using linear dopent drift model to ascertain the theoretical and experimental conformations. For the simulation purpose, the width of doped region (w) limited to the interval [0, D] is considered as a state variable along with the window function characterized by the equation f ( x) = w (1 - w). The reported memristor device exhibits the symmetric pinched hysteresis loop in I- V plane within the low operating voltage (±1 V). [Figure not available: see fulltext.

  1. Calculation of Elastic Constants of Ag/Pd Superlattice Thin Films by Molecular Dynamics with Many-Body Potentials

    Institute of Scientific and Technical Information of China (English)

    GAO Ning; LAI Wen-Sheng

    2006-01-01

    @@ The calculation of elastic constants of Ag/Pd superlattice thin films by molecular dynamics simulations with many-body potentials is presented. It reveals that the elastic constants C11 and C55 increase with decreasing modulation wavelength A of the films, which is consistent with experiments. However, the change of C11 and C55 with A is found to be around the values determined by a rule of mixture using bulk elastic constants of metals.No supermodulus effect is observed and it is due to cancellation between enhanced and reduced contributions to elastic constants from Ag and Pd layers subjected to compressive and tensile strains, respectively.

  2. Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics

    Science.gov (United States)

    Chagarov, Evgueni; Sardashti, Kasra; Kummel, Andrew C.; Lee, Yun Seog; Haight, Richard; Gershon, Talia S.

    2016-03-01

    The growth in efficiency of earth-abundant kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has slowed, due in part to the intrinsic limitations imposed by the band tailing attributed primarily to I-II antisite exchange. In this study, density functional theory simulations show that when Ag is substituted for Cu to form kesterite Ag2ZnSnSe4 (AZTSe), the I-II isolated antisite formation energy becomes 3.7 times greater than in CZTSSe, resulting in at least an order of magnitude reduction in I-II antisite density. Experimental evidence of an optoelectronically improved material is also provided. Comparison of the low-temperature photoluminescence (PL) structure of Cu(In,Ga)Se2 (CIGSe), CZTSSe, and AZTSe shows that AZTSe has a shallow defect structure with emission significantly closer to the band edge than CZTSe. Existence of suppressed band tailing is found in the proximity of the room-temperature PL peak of AZTSe to its measured band gap. The results are consistent with AZTSe being a promising alternative to CZTSSe and CIGSe for thin film photovoltaics.

  3. Fabrication of Ta–Si–N/Ag nanocomposite thin films with near-zero temperature coefficient of resistance

    International Nuclear Information System (INIS)

    Highlights: • Composite thin films with Ag nano-grains uniformly distributed in amorphous Ta–Si–N matrix are obtained. • The temperature coefficient of resistance and the resistivity can be well adjusted by changing Si component. • The balance between quantum tunneling effect and phonon scattering effect results in near-zero TCR. • The near-zero TCR can be maintained at an extremely low temperature from 105 K to 225 K. - Abstract: Ta–Si–N/Ag nanocomposite thin films were prepared by reactive magnetron co-sputtering of Ta, Si and Ag targets in the plasma of N2 and Ar. It was found that Ag nano-grains were uniformly distributed in the amorphous matrix due to the incorporation of Si. The sizes of Ag grains and the separation between them could be well controlled by changing the Si component, which can be adopted to improve the electronic properties of the composite resistive films. A near-zero temperature coefficient of resistance (TCR) of +39.7 ppm/K was obtained in the thin films with a Si component of 5.88 at.% as a result of the balance of quantum tunneling effect and phonon scattering effect. This is consolidated by the changes in the measured carrier density and Hall mobility at different temperatures. Particularly, the near-zero TCR could be maintained at an extremely low temperature from 105 K to 225 K. The results are of great significance for the exploitation of high-performance resistive thin films

  4. Synthesis, characterisation and antibacterial activity of PVA/TEOS/Ag-Np hybrid thin films.

    Science.gov (United States)

    Bryaskova, Rayna; Pencheva, Daniela; Kale, Girish M; Lad, Umesh; Kantardjiev, T

    2010-09-01

    Novel hybrid material thin films based on polyvinyl alcohol (PVA)/tetraethyl orthosilicate (TEOS) with embedded silver nanoparticles (AgNps) were synthesized using sol-gel method. Two different strategies for the synthesis of silver nanoparticles in PVA/TEOS matrix were applied based on reduction of the silver ions by thermal annealing of the films or by preliminary preparation of silver nanoparticles using PVA as a reducing agent. The successful incorporation of silver nanoparticles ranging from 5 to 7nm in PVA/TEOS matrix was confirmed by TEM and EDX analysis, UV-Vis spectroscopy and XRD analysis. The antibacterial activity of the synthesized hybrid materials against etalon strains of three different groups of bacteria -Staphylococcus aureus (gram-positive bacteria), Escherichia coli (gram-negative bacteria), Pseudomonas aeruginosa (non-ferment gram-negative bacteria) has been studied as they are commonly found in hospital environment. The hybrid materials showed a strong bactericidal effect against E. coli, S. aureus and P. aeruginosa and therefore have potential applications in biotechnology and biomedical science. PMID:20557895

  5. Micro-PIXE and channeling PIXE analysis of Ag-doped YBa2Cu3O7-δ thin films

    International Nuclear Information System (INIS)

    Nuclear Microscopy, utilizing a 2 MeV He+ beam for channeling Rutherford Backscattering (RBS) and PIXE analysis, was used to characterise Ag-doped YBa2Cu3O7-δ thin films and measure the lateral distribution of the Ag. The samples were prepared by in situ two-beam pulsed laser deposition in order to investigate the effects of such dopings on critical current densities . Films deposited at temperatures above 650 deg. C form needle-like surface structures with a length of up to 100 μm; these tend to align with in-plane a-b axis. Results for a sample prepared at a substrate temperature of 730 deg. C and a maximum Ag concentration of 5 at.% are discussed. The needle-like structures were found to be rich in Ag and Cu, and the YBa2Cu3O7-δ film contained 0.02 at.% Ag. Broad beam PIXE-channeling results indicate that 19% of the Ag is substitutional

  6. Influence of oxygen partial pressure on the physical properties of Ag doped NiO thin films

    Science.gov (United States)

    Reddy, Y. Ashok Kumar; Reddy, A. Sivasankar; Reddy, P. Sreedhara

    2013-06-01

    Ag doped p-type NiO thin films were successfully deposited by DC reactive magnetron sputtering technique at different oxygen partial pressures in the range 1 × 10-4 - 9 × 10-4 mbar. The structural and morphological properties of the films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). All the deposited films were of polycrystalline nature and exhibited cubic structure with preferential growth. The morphological studies revealed that the surface roughness was increased with increasing oxygen partial pressure up to 5 × 10-4 mbar and decreased at higher oxygen partial pressures.

  7. Application of WO{sub 3} thin films for enhancement of photolysis in AgCl

    Energy Technology Data Exchange (ETDEWEB)

    Gavrilyuk, A.I. [A.F. Ioffe Physical Technical Institute of Russian Academy of Sciences, 194021 Polytekchnicheskaya Street 26, Sankt-Petersburg (Russian Federation)

    2009-10-15

    A double-layer AgCl-WO{sub 3} structure was employed to produce photochemical hydrogen for doping of an AgCl film. Atomic photochemical hydrogen, detached under the action of light from hydrogen donor molecules, previously adsorbed on the WO{sub 3} surface, migrated through the WO{sub 3} film into the AgCl film, which provided doping of the AgCl surface and yielded hydrogen sensitization simultaneous to illumination and yielded the enhancement of photochromism in the AgCl films. The atomic hydrogen played the role of a reducing agent and triggered the formation of sensitization centers on the halide surface, which in turn facilitated the growth of silver clusters and colloids under the action of light. The double-layer AgCl-WO{sub 3} structure realizes the idea of two-stage catalysis: first the oxide surface catalyses hydrogen production under the action of light, then the photochemical hydrogen atoms act as catalysts during the photolysis of the halide. (author)

  8. Antimicrobial properties of Zr–Cu–Al–Ag thin film metallic glass

    International Nuclear Information System (INIS)

    Metallic glass as a prominent class of structure and multifunctional materials exhibits several unique properties in mechanical, electrochemical, and thermal properties. This study aimed to realize the advantage of biomedical application and to promote the attainable size of metallic glasses by the physical vapor deposition. The Zr–Cu–Al–Ag thin film metallic glass (TFMG) was deposited on silicon wafer and SUS304 stainless steel substrates by magnetron sputtering with single target. For X-ray diffraction analysis, all TFMGs revealed typical broad peaks around the incident angle of 30 to 50°, suggesting that coatings possess amorphous structure. In addition, diffuse halo ring patterns of transmission electron microscopy indicated a fine amorphorization for TFMG via sputtering process. The variation of surface roughness showed that TFMG derived from higher power of metallic targets revealed rougher morphology. Besides, the roughness of SUS304 stainless steel substrate significantly reduced from 7 nm to about 1 nm after TFMGs were deposited. The microbes of Candida albicans, Escherichia coli, and Pseudomonas aeruginosa were used and cultivated on the TFMG coatings with medium to investigate the antimicrobial properties. In the incubation experiment, the growth of each microbe was recorded by a digital photography system and the growth area was calculated by image processing software. The growth area of the microbes on the TFMG was mostly smaller than that on SUS304 stainless steel ones within incubation time of 72 h, indicating that the TFMGs reveal better antimicrobial capability. Moreover, the coatings exhibit a particularly long-term antimicrobial effect for P. aeruginosa. In summary, the Zr–Cu–Al–Ag prepared by sputtering with a single target device presented superior glass forming ability, and coatings with copper and silver constituents revealed significantly antimicrobial properties. Besides, the surface roughness is another factor to affect the

  9. Antimicrobial properties of Zr–Cu–Al–Ag thin film metallic glass

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hsien-Wei; Hsu, Kai-Chieh; Chan, Yu-Chen [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan (China); Duh, Jenq-Gong, E-mail: jgd@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan (China); Lee, Jyh-Wei [Department of Materials Engineering, Ming Chi University of Technology, Taipei, Taiwan (China); Center for Thin Film Technologies and Applications, Mingchi University of Technology, Taipei, Taiwan (China); Jang, Jason Shian-Ching [Department of Mechanical Engineering, Institute of Materials Science and Engineering, National Central University, Chung-Li, Taiwan (China); Chen, Guo-Ju [Department of Materials Science and Engineering, I-Shou University, Kaohsiung, Taiwan (China)

    2014-06-30

    Metallic glass as a prominent class of structure and multifunctional materials exhibits several unique properties in mechanical, electrochemical, and thermal properties. This study aimed to realize the advantage of biomedical application and to promote the attainable size of metallic glasses by the physical vapor deposition. The Zr–Cu–Al–Ag thin film metallic glass (TFMG) was deposited on silicon wafer and SUS304 stainless steel substrates by magnetron sputtering with single target. For X-ray diffraction analysis, all TFMGs revealed typical broad peaks around the incident angle of 30 to 50°, suggesting that coatings possess amorphous structure. In addition, diffuse halo ring patterns of transmission electron microscopy indicated a fine amorphorization for TFMG via sputtering process. The variation of surface roughness showed that TFMG derived from higher power of metallic targets revealed rougher morphology. Besides, the roughness of SUS304 stainless steel substrate significantly reduced from 7 nm to about 1 nm after TFMGs were deposited. The microbes of Candida albicans, Escherichia coli, and Pseudomonas aeruginosa were used and cultivated on the TFMG coatings with medium to investigate the antimicrobial properties. In the incubation experiment, the growth of each microbe was recorded by a digital photography system and the growth area was calculated by image processing software. The growth area of the microbes on the TFMG was mostly smaller than that on SUS304 stainless steel ones within incubation time of 72 h, indicating that the TFMGs reveal better antimicrobial capability. Moreover, the coatings exhibit a particularly long-term antimicrobial effect for P. aeruginosa. In summary, the Zr–Cu–Al–Ag prepared by sputtering with a single target device presented superior glass forming ability, and coatings with copper and silver constituents revealed significantly antimicrobial properties. Besides, the surface roughness is another factor to affect the

  10. A simple synthesis of Ag{sub 2+x}Se nanoparticles and their thin films for electronic device applications

    Energy Technology Data Exchange (ETDEWEB)

    Vo, Duc Quy; Dung, Dang Duc; Cho, Sunglae; Kim, Sunwook [School of Chemical Engineering, University of Ulsan, Ulsan (Korea, Republic of)

    2016-01-15

    A simple method to synthesize silver selenide nanoparticles has been proposed. By changing the ratio of Se-oleylamine complex and silver acetate in the reacting mixture at different temperatures, both size and stoichiometry of the silver selenide particles could be successfully controlled. The size of the nanoparticles was adjusted by changing reaction temperatures. The synthesized silver selenide nanoparticles showed size changes from 3 to 10 nm when the corresponding reaction temperatures were 40-100 .deg. C, respectively. In addition to the size change, the stoichiometry of the synthesized nanoparticles (Ag{sub 2+x}Se) could be adjusted by simply varying the ratio of Ag to Se precursors. Through XPS analyses the x value in Ag{sub 2+x}Se was determined, and it changed between 0.54 and −0.03 by varying Ag/Se ratio from 2/0.75 to 2/4. The optical property of the nonstoichiometric Ag{sub 2+x}Se nanoparticles was different from that of stoichiometric Ag{sub 2}Se nanoparticles, but showed the plasmon absorption of Ag-Ag network. The plasmon absorption was decreased with the increased concentration of the Se precursor. Finally, the Ag{sub 2+x}Se thin film in this work showed large magnetoresistance and successfully applied to prepare high-performance Schottky diode. The Ag{sub 2.06}Se film exhibited the magnetoresistance effect up to 0.9% at only 0.8 T at room temperature. The voltage drop and breakdown voltage of the Schottky diode were 0.5 V and 9.3 V, respectively.

  11. Spectroscopic ellipsometry study of the dielectric response of Au-In and Ag-Sn thin-film couples

    International Nuclear Information System (INIS)

    Optical properties and phase composition of In-Au and Sn-Ag ultra-thin films grown by sequential evaporating and co-depositing of metals in a vacuum were investigated combining X-ray diffraction and spectroscopic ellipsometry methods. The atomic concentration ratios of bilayer and co-deposited samples were the same, i.e. In(Sn):Au(Ag) = 1:2. The XRD patterns indicated creation of AuIn, AuIn2, Au3In2, Au9In4 and Ag3Sn intermetallic compounds at room temperature. The effective complex dielectric functions of the composite layers, =1(E)>+i2(E)>, were determined from ellipsometric quantities Ψ and Δ measured in a photon energy range of 0.6-6.5 eV. The free-carrier parameters (unscreened plasma frequency and free-carrier damping) and optical resistivity were evaluated using a semiclassical Drude-Lorentz model of the effective dielectric function. There was noticed a distinct influence of phase composition and surface morphology on the optical constants and conductivity of the samples: ρop changed from approximately 15 μΩ cm to 37 μΩ cm for Ag-Sn structures, composed of β-Sn and Ag3Sn phases, and from 21 μΩ cm to 83 μΩ cm for Au-In multiphase system. Lower resistivity demonstrated diffusive layers formed after deposition of an In(Sn) thin film on the noble metal underlayer.

  12. Novel fabrication of Ag thin film on glass for efficient surface-enhanced Raman scattering.

    Science.gov (United States)

    Park, Hyoung Kun; Yoon, Jae Keun; Kim, Kwan

    2006-02-14

    This paper describes a very simple electroless-plating method used to prepare optically tunable nanostructured Ag films. Very stable Ag films can be reproducibly fabricated simply by soaking glass substrates in ethanolic solutions of AgNO3 and butylamine. The grain size of silver can be readily controlled to range from 20 to 150 nm, and these nanostructural features correlated well with their UV/vis absorption characteristics, as well as with their surface-enhanced Raman scattering (SERS) activities. It is also very advantageous that the Ag films prepared exhibit very even SERS activity over an area up to hundreds thousand square-micrometers, and the enhancement factor estimated using benzenethiol as a prototype adsorbate reaches approximately 2 x 10(5). Since the proposed method is cost-effective and is suitable for the mass production of diverse Ag films irrespective of the shapes of the underlying substrates, it is expected to play a significant role in the development of surface plasmon-based analytical devices. PMID:16460083

  13. Photochromism in RbAg4I5 thin films enhanced by hydrogen photosensitization simultaneous to illumination

    International Nuclear Information System (INIS)

    Photochemical hydrogen detached under the action of light from organic molecules adsorbed on the surface of various solids may perform different functions, for example, as a fuel, dopant or catalyst, which is of great interest for energy conversion, electronics, biology and medicine. On the other hand, physical and chemical properties of RbAg4I5 have been extensively studied in the last years because of its practical importance in solid electrolytes due to the superionic conductance for silver atoms at room temperature. Here we report on less common properties of RbAg4I5 presenting an experimental study of photochromism in RbAg4I5 thin films enhanced with the help of photochemical hydrogen detached from organic molecules adsorbed on the surface of the superionic conductor. This effect yielded drastic changes of the optical parameters of RbAg4I5 films in visible, UV and near IR spectral range due to photolysis and formation of silver clusters and colloids. We present a physical explanation that connects the behavior of hydrogen and the mechanism of the photolysis, whose main spirit is hydrogen photosensitization of RbAg4I5 films carried out simultaneously to illumination

  14. Photochromism in RbAg{sub 4}I{sub 5} thin films enhanced by hydrogen photosensitization simultaneous to illumination

    Energy Technology Data Exchange (ETDEWEB)

    Gavrilyuk, A.I. [A.F. Ioffe Physical Technical Institute of Russian Academy of Sciences Polytechnicheskaya Street 26 Sankt-Petersburg (Russian Federation)]. E-mail: Gavrilyuk@mail.ioffe.ru; Lanskaya, T.G. [A.F. Ioffe Physical Technical Institute of Russian Academy of Sciences Polytechnicheskaya Street 26 Sankt-Petersburg (Russian Federation)

    2006-12-05

    Photochemical hydrogen detached under the action of light from organic molecules adsorbed on the surface of various solids may perform different functions, for example, as a fuel, dopant or catalyst, which is of great interest for energy conversion, electronics, biology and medicine. On the other hand, physical and chemical properties of RbAg{sub 4}I{sub 5} have been extensively studied in the last years because of its practical importance in solid electrolytes due to the superionic conductance for silver atoms at room temperature. Here we report on less common properties of RbAg{sub 4}I{sub 5} presenting an experimental study of photochromism in RbAg{sub 4}I{sub 5} thin films enhanced with the help of photochemical hydrogen detached from organic molecules adsorbed on the surface of the superionic conductor. This effect yielded drastic changes of the optical parameters of RbAg{sub 4}I{sub 5} films in visible, UV and near IR spectral range due to photolysis and formation of silver clusters and colloids. We present a physical explanation that connects the behavior of hydrogen and the mechanism of the photolysis, whose main spirit is hydrogen photosensitization of RbAg{sub 4}I{sub 5} films carried out simultaneously to illumination.

  15. A chemical bath deposition route to facet-controlled Ag3PO4 thin films with improved visible light photocatalytic activity

    Science.gov (United States)

    Gunjakar, Jayavant L.; Jo, Yun Kyung; Kim, In Young; Lee, Jang Mee; Patil, Sharad B.; Pyun, Jae.-Chul.; Hwang, Seong-Ju

    2016-08-01

    A facile, economic, and reproducible chemical bath deposition (CBD) method is developed for the fabrication of facet-controlled Ag3PO4 thin films with enhanced visible light photocatalytic activity. The fine-control of bath temperature, precursor, complexing agent, substrate, and solution pH is fairly crucial in preparing the facet-selective thin film of Ag3PO4 nanocrystal. The change of precursor from silver nitrate to silver acetate makes possible the tailoring of the crystal shape of Ag3PO4 from cube to rhombic dodecahedron and also the bandgap tuning of the deposited films. The control of [Ag+]/[phosphate] ratio enables to maximize the loading amount of Ag3PO4 crystals per the unit area of the deposited film. All the fabricated Ag3PO4 thin films show high photocatalytic activity for visible light-induced degradation of organic molecules, which can be optimized by tailoring the crystal shape of the deposited crystals. This CBD method is also useful in preparing the facet-controlled hybrid film of Ag3PO4-ZnO photocatalyst. The present study clearly demonstrates the usefulness of the present CBD method for fabricating facet-controlled thin films of metal oxosalt and its nanohybrid.

  16. Surface Plasmons and Optical Properties of TiO2/X(X = Au and Ag) Nanostructure Thin Films

    Science.gov (United States)

    Zolanvari, A.; Sadeghi, H.; Norouzi, R.; Ranjgar, A.

    2013-09-01

    TiO2/X(X = Au and Ag) nanolayers are fabricated by depositing TiO2 films using rf magnetron sputtering on thin quartz substrates embedded with Au and Ag nanoparticles. Enhancement of light absorption of the nanostructural layers is observed. These plasmonic and non-plasmonic materials are ordered in geometric arrangements with dimensions that are fractions of the wavelength of light. The light absorption enhancement of synthesized structure in comparison to TiO2 is originated from near-field enhancement caused by the plasmonic effect of metallic nanoparticles, which can be demonstrated by the optical absorption spectra. We show that plasmon modes can exist for the infrared region of the optical spectrum. Also, we analyze the optical properties of the metal-insulator films, in order to clarify the role of metal inclusions in the TiO2 dielectric matrix. Optical band gaps of the nanolayer films are calculated by using Tauc's relation, and the n values of optical band gaps with the variation composition are found from 1.80 to 3.69 eV. Band gap narrowing and absorption in the visible spectral region induced by the incorporation of TiO2/X(X=Au and Ag) nanolayers enable the design of nanostructured thin films to be achieved for photocatalysts and solar energy converters.

  17. Structural characteristics of thermally evaporated Cu0.5Ag0.5InSe2 thin films

    Science.gov (United States)

    Gullu, H. H.; Parlak, M.

    2016-05-01

    In this work, Cu0.5Ag0.5InSe2 (CAIS) thin film samples were prepared by thermal evaporation of Cu, Ag, InSe and Se evaporants sequentially on glass substrates. Following the deposition, annealing processes were applied at different temperatures. The as-grown and annealed CAIS samples were nearly stoichiometric in the detection limit of the compositional measurement. The x-ray diffraction (XRD) measurements revealed that they were in polycrystalline structure with a preferred orientation along the (112) direction. Moreoever, the crystallinity of the films improved with increasing annealing temperature. According to the results of Raman measurements, the highest Raman intensity was found in the A1 mode which is directly proportional to the crystallinity of the samples. The surface properties of the thin films were analyzed by means of scanning electron microscopy (SEM) and atomic force microscopy (AFM). These results showed that there was a Se agglomeration on the deposited film surfaces and with annealing processes segregation effects were observed on the surface of the annealed samples. X-ray photoelectron spectroscopy (XPS) measurements were carried out to get information about surface and near-surface properties of the films. The results from the surface and depth surface analyses of the films were found to be in agreement with the energy dispersive spectroscopy (EDS) analysis.

  18. AgTaO3 and AgNbO3 thin films by pulsed laser deposition

    International Nuclear Information System (INIS)

    Silver tantalate AgTaO3 (ATO) and silver niobate AgNbO3 (ANO) films have been grown on to the LaAlO3 (001) and sapphire Al2O3 (0112, r-cut) single crystals by pulsed laser deposition technique from stoichiometric ATO and ANO targets. X-ray diffraction study revealed epitaxial quality of ATO and ANO films on the LaAlO3 (001) whereas on the sapphire r-cut substrate they are preferential (110) and (001) oriented. To characterize microwave films properties in the range from 1 to 40 GHz, coplanar line interdigital capacitors were fabricated by photolithography and lift-off technique. ANO film capacitors show superior properties: frequency dispersion was as low as 13%, voltage tunability (40 V, 200 kV/cm) was about 4.6% at 20 GHz, loss tangent ∼0.106 at 20 GHz, K-factor = tunability / tanδ from 49% at 10 GHz to 33% at 40 GHz

  19. Improved current transport properties of post annealed Y1Ba2Cu3O7-x thin films using Ag doping

    DEFF Research Database (Denmark)

    Clausen, Thomas; Skov, Johannes; Jacobsen, Claus Schelde; Bukh, K R; Bollinger, Mikkel; Tobiasen, B. P.; Sager, M. P.; Chorkendorff, Ib; Larsen, J

    1996-01-01

    The influence of Ag doping on the transport properties of Y1Ba2Cu3O7–x thin films prepared by Y, BaF2, and Cu co-evaporation and optimized ex situ post annealing has been investigated. Both undoped and Ag doped films have values of Tc above 90 K, but Jc (77 K) is highly dependent on the nominal...... thickness (tnom) of the as-deposited film. For undoped films with tnom>106 A/cm2) decreases monotonically with increasing film thickness. Above 300 nm Jc (77 K) decreases rapidly to values below 5×105 A/cm2. Ag doped films with tnom>=200 nm have higher Jc (77 K) values than those of undoped films. Ag doped...

  20. Change in surface states of Ag(111) thin films upon adsorption of a monolayer of PTCDA organic molecules

    International Nuclear Information System (INIS)

    The change in the electronic structure of silver thin films of different thicknesses with the Ag( 111) orientation due to the interaction with an adsorbed monolayer of ordered organic molecules of 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA) has been investigated in terms of density functional theory. It has been shown that one of the two surface states of the pure films transforms into an unocc upied interface state due to the interaction so that all the main features of the initial state are retained. The relation of the resulting state to the unoccupied state experimentally observed in the PTCDA/Ag( 111 ) system by scanning tunneling and two-photon photoemission spectroscopy has been discussed.

  1. PANI-Ag-Cu Nanocomposite Thin Films Based Impedimetric Microbial Sensor for Detection of E. coli Bacteria

    Directory of Open Access Journals (Sweden)

    Huda Abdullah

    2014-01-01

    Full Text Available PANI-Ag-Cu nanocomposite thin films were prepared by sol-gel method and deposited on the glass substrate using spin coating technique. Polyaniline was synthesized by chemical oxidative polymerization of aniline monomer in the presence of nitric acid. The films were characterized using XRD, FTIR, and UV-Visible spectroscopy. The performance of the sensor was conducted using electrochemical impedance spectroscopy to obtain the change in impedance of the sensor film before and after incubation with E. coli bacteria in water. The peaks in XRD pattern confirm the presence of Ag and Cu nanoparticles in face-centered cubic structure. FTIR analysis shows the stretching of N–H in the polyaniline structure. The absorption band from UV-Visible spectroscopy shows high peaks between 400 nm and 500 nm which indicate the presence of Ag and Cu nanoparticles, respectively. Impedance analysis indicates that the change in impedance of the films decreases with the presence of E. coli. The sensitivity on E. coli increases for the sample with high concentration of Cu.

  2. Synthesis and characterization of silver diethyldithiocarbamate cluster for the deposition of acanthite (Ag2S) thin films for photoelectrochemical applications

    International Nuclear Information System (INIS)

    Acanthite (Ag2S) thin films were fabricated on fluorine doped tin oxide coated conducting glass substrates by aerosol assisted chemical vapor deposition (AACVD) using silver cluster [Ag4{S2CN(C2H5)2}3(C5H5N)2]n·nNO3·2nH2O (1) [where (S2CN(C2H5)2) = diethyldithiocarbamate, C5H5N = pyridine] as a single source precursor. Cluster (1) was synthesized by the reaction of sodium diethyldithiocarbamate with silver nitrate in a mixture of acetone and pyridine. (1) was analyzed by melting point, elemental analysis, Fourier transform infrared spectroscopy, proton nuclear magnetic resonance spectroscopy, thermogravimetry and single crystal X-ray studies. Single crystal X-ray studies showed that (1) crystallizes in the triclinic crystal system with a = 11.4372(3), b = 11.6768(3), and c = 16.3672(4) Å and α = 105.817(3), β = 97.891(3), and γ = 93.274(3)° in the space group P-1. Thermogravimetric analysis revealed that (1) undergoes facile thermal decomposition at 400 °C to give a stable residual mass consistent with the formation of Ag2S. Thin films grown from a 0.02 M solution of (1) in pyridine at 350 and 400 °C using AACVD technique were characterized by powder X-ray diffraction, field emission scanning electron microscopy (FESEM), energy dispersive X-ray and ultraviolet-visible spectrophotometry. FESEM images of the films exhibited well-defined nanorods with length > 1000 nm and diameter 100–150 nm grown without any cracks, fractures or directional preference. A band gap of 1.05 eV was estimated by extrapolating the linear part of a Tauc plot recorded for the films. The photoelectrochemical (PEC) characteristics recorded under Air Mass 1.5 illumination indicated a photocurrent density of 220 μA cm−2 at 0.0 V vs Ag/AgCl/3 M KCl. The optical and PEC characteristics of the deposited thin films proved their suitability for PEC applications. - Highlights: • Synthesis and characterization of silver diethyl dithiocarbamate cluster • Fabrication of optically

  3. The role of exposed silver in CO oxidation over MgO(0 0 1)/Ag(0 0 1) thin films

    OpenAIRE

    Ringleb, F.; Fujimori, Y.; Brown, M; Kaden, W.; Calaza, F.; Kuhlenbeck, H.; Sterrer, M.; Freund, H

    2015-01-01

    The reactivity of MgO(0 0 1) films deposited on Ag(0 0 1) and Mo(0 0 1) in CO oxidation as a function of oxide film thickness was investigated experimentally at ambient pressure reaction conditions. MgO films grown on Mo(0 0 1) were found to be inactive in CO oxidation, whereas activity enhancement with decreasing oxide film thickness was observed for MgO(0 0 1)/Ag(0 0 1). In situ infrared and post-reaction X-ray photoemission data showed that ultra-thin MgO films interact much more strongly ...

  4. ArF excimer laser-induced deposition of Ag/C nanocomposite thin films in the presence of n-Hexane

    International Nuclear Information System (INIS)

    Highlights: • A new excimer laser ablation process was proposed to fabricate Ag/C thin film. • The size of Ag nanoparticles is ranging from 5 to 20 nm. • The ratios of Ag to C can be controlled by adjusting the pressure of n-Hexane. • The graphite-like structure of carbonaceous products was confirmed. - Abstract: Ag/C nanocomposite thin films with different Ag/C molar ratios have been prepared using ArF excimer laser-induced ablation process and silver target under n-Hexane atmosphere. The morphology, crystal structure and composition of as-deposited Ag/C nanocomposite thin films were investigated with high resolution electronic microscopic techniques (including scanning electron microscopy and transmission electron microscopy) and energy-dispersive X-ray spectroscopy, respectively. Laser Raman spectroscopy and Fourier transform infrared spectroscopy techniques were also applied to characterize the final carbonaceous products generated from n-Hexane under laser ablation process. The optical emission of the plume caused by the interaction between excimer laser and silver target in the presence of n-Hexane was studied to understand the possible reaction process. The UV–vis absorption of as-deposited Ag/C thin films, which is attributed to the surface plasmonic excitation, was also investigated in the present work

  5. Effect of Film Thickness on the Thermo-Mechanical Behavior of Unpassivated Cu(Ag) Thin Films during Thermal Cycling

    International Nuclear Information System (INIS)

    The stress-temperature and stress-time behavior in electrochemically deposited Cu(1.5 at% Ag) was investigated by substrate curvature measurements. Film stress is separated into the average stress in the grain boundary and the average stress in the grain volume by assuming that grain boundary diffusion is the dominant stress relaxation mechanism. The athermal flow stress, the activation energy for grain boundary diffusion, and the elastic properties are discussed in dependence on film thickness

  6. Investigation of nanostructured Pd-Ag/n-ZnO thin film based Schottky junction for methane sensing

    Science.gov (United States)

    Roy, S.; Das, S.; Sarkar, C. K.

    2016-07-01

    Undoped nanocrystalline n-type ZnO thin film was deposited by chemical deposition technique on a thermally oxidized p-Si (~5 Ω cm resistivity and orientation) substrate. Formation of stable zinc oxide thin film was confirmed by two-dimensional X-Ray Diffraction (XRD) and EDX analysis. The average crystallite size of the ZnO sample was evaluated as ~50 nm. The surface was characterized by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) that confirm the formation of nanocrystalline (grain size ~50 nm) ZnO thin film with surface roughness of ~100 nm. Good conversion of precursor into ZnO thin film in the chemical deposition method was evident by Fourier Transform Infrared Spectroscopy (FTIR). A small peak at 479 cm-1was observed in the FTIR spectrum confirming the formation of quartzite structure of the ZnO. The band gap (~3.44 eV) of the material was calculated from the optical absorption spectroscopy. To prepare Pd-Ag/n-ZnO Schottky junction, Pd-Ag contacts were taken by electron beam evaporation method. I-V characteristics of the junction were studied at different temperatures in inert and reducing ambient (N2 and N2 + CH4) with turn on voltage of around 0.2 V. The parameters like ideality factor ( η), saturation current ( I 0), series resistance ( Rs), and barrier height ( Φ BO) of the junction were calculated in the temperature range 50-200 °C in N2 as well as in 1 % CH4 + N2 ambient. It was observed that the ideality factor decreases in the temperature range 50-200 °C ( η = 12.34 at 50 °C and η = 1.52 at 200 °C) in N2 ambient and η = 1.18 in N2 +CH4 ambient at 200 °C. Schottky Barrier Height ( Φ BO) of the Pd-Ag/n-ZnO junction was found to increase with temperature. A close observation of Pd-Ag/n-ZnO junction in the presence of methane was performed to appreciate its application as methane sensor. The sensing mechanism was illustrated by a simplified energy band diagram.

  7. Electrochemical layer by layer growth and characterization of copper sulfur thin films on Ag(1 1 1)

    International Nuclear Information System (INIS)

    Copper sulfide (CuS) thin films were grown on a single crystal Ag(1 1 1) substrate by Electrochemical Atomic Layer Deposition (ECALD) method, i.e., by alternated surface limited deposition of copper and sulfur. A detailed investigation of deposition of Cu on S allowed to find the best conditions for copper deposition. The electrochemical characterization of deposits obtained with different deposition cycles suggests a 1:1 stoichiometric ratio between Cu and S corresponding to Cu monosulfide. The compositional analysis was performed by X-rays Photoelectron Spectroscopy (XPS), and the morphological was investigated by Atomic Force Microscopy (AFM) for deposits formed with 20 ECALD cycles.

  8. Effective Ag doping by He-Ne laser exposure to improve the electrical and the optical properties of CdTe thin films for heterostructured thin film solar cells

    International Nuclear Information System (INIS)

    The cadmium telluride (CdTe) thin film solar cell is one of the strongest candidates due to the optimum band gap energy (about 1.4 eV) for solar energy absorption, high light absorption capability and lower cost requirements for solar cell production. However, the maximum efficiency of a CdTe thin film solar cell still remains just 16.5% despite its excellent absorption coefficient; i.e., the electrical properties of CdTe thin film, including the resistivity, must be improved to enhance the energy conversion efficiency. Silver (Ag) was doped by using helium-neon (He-Ne) laser (632.8 nm) exposure into sputtering-deposited p-type CdTe thin films. The resistivity of the Ag-doped CdTe thin films was reduced from 2.97 x 104 Ω-cm to the order of 5.16 x 10'-'2 Ω-cm. The carrier concentration of CdTe thin films had increased to 1.6 x 1018 cm-3 after a 15-minute exposure to the He-Ne laser. The average absorbance value of CdTe thin films was improved from 1.81 to 3.01 by the doping of Ag due to impurity-scattering. These improved properties should contribute to the efficiency of the photovoltaic effect of the photogenerated charged carriers. The methodology in this study is very simple and effective to dope a multilayered thin film solar cell with a relatively short process time, no wet-process, and selective treatment.

  9. A Solid-State Thin-Film Ag/AgCl Reference Electrode Coated with Graphene Oxide and Its Use in a pH Sensor

    Directory of Open Access Journals (Sweden)

    Tae Yong Kim

    2015-03-01

    Full Text Available In this study, we describe a novel solid-state thin-film Ag/AgCl reference electrode (SSRE that was coated with a protective layer of graphene oxide (GO. This layer was prepared by drop casting a solution of GO on the Ag/AgCl thin film. The potential differences exhibited by the SSRE were less than 2 mV for 26 days. The cyclic voltammograms of the SSRE were almost similar to those of a commercial reference electrode, while the diffusion coefficient of Fe(CN63− as calculated from the cathodic peaks of the SSRE was 6.48 × 10−6 cm2/s. The SSRE was used in conjunction with a laboratory-made working electrode to determine its suitability for practical use. The average pH sensitivity of this combined sensor was 58.5 mV/pH in the acid-to-base direction; the correlation coefficient was greater than 0.99. In addition, an integrated pH sensor that included the SSRE was packaged in a secure digital (SD card and tested. The average sensitivity of the chip was 56.8 mV/pH, with the correlation coefficient being greater than 0.99. In addition, a pH sensing test was also performed by using a laboratory-made potentiometer, which showed a sensitivity of 55.4 mV/pH, with the correlation coefficient being greater than 0.99.

  10. Studies on mass attenuation coefficients, effective atomic numbers and electron densities for CoCuAg alloy thin film

    Science.gov (United States)

    Apaydın, G.; Cengiz, E.; Tıraşoğlu, E.; Aylıkcı, V.; Bakkaloğlu, Ö. F.

    2009-05-01

    The mass attenuation coefficients for the elements Co, Cu and Ag and a thin film of CoCuAg alloy were measured in the energy range 4.029-38.729 keV. Effective atomic numbers and electron densities were calculated by using these coefficients. The energies were obtained by using secondary targets that were irradiated with gamma-ray photons of 241Am. The x-rays were counted by using a Canberra Ultra-LEGe detector with a resolution of 150 eV at 5.9 keV. The results were compared with theoretical calculated values and fairly good agreement was found between them within an average experimental error. The mass attenuation coefficients, effective atomic numbers and electron densities were plotted versus photon energy.

  11. Studies on mass attenuation coefficients, effective atomic numbers and electron densities for CoCuAg alloy thin film

    International Nuclear Information System (INIS)

    The mass attenuation coefficients for the elements Co, Cu and Ag and a thin film of CoCuAg alloy were measured in the energy range 4.029-38.729 keV. Effective atomic numbers and electron densities were calculated by using these coefficients. The energies were obtained by using secondary targets that were irradiated with gamma-ray photons of 241Am. The x-rays were counted by using a Canberra Ultra-LEGe detector with a resolution of 150 eV at 5.9 keV. The results were compared with theoretical calculated values and fairly good agreement was found between them within an average experimental error. The mass attenuation coefficients, effective atomic numbers and electron densities were plotted versus photon energy.

  12. The electronic states of ordered thin films of perylene on Ag (1 1 0)

    International Nuclear Information System (INIS)

    The growth of perylene on Ag (1 1 0) has been studied by ultraviolet photoemission spectroscopy measurements and low-energy electron diffraction. Four emission features of the organic material are located at 3.5, 4.8, 6.4 and 8.5 eV, respectively, below the Fermi level. An ordered structure of c(6x2) can be observed when the organic film is about a monolayer (3 Angst thickness). The angle-resolved ultraviolet photoemission spectroscopy measurements show that the molecular plane of perylene near the interface is parallel to the substrate. The desorption of the organic material occurs with warming the substrate; the perylene molecules are stable on the Ag (1 1 0) surface and no decomposition is observed below 140 deg. C

  13. Surface assisted electric transport in Ag{sub 2}S thin films

    Energy Technology Data Exchange (ETDEWEB)

    Karashanova, D. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria)]. E-mail: adi@clf.bas.bg; Starbov, N. [Central Laboratory of Photoprocesses ' Acad. Jordan Malinowski' , Bulgarian Academy of Sciences, Acad. Georgy Bonchev Str., bl. 109, 1113 Sofia (Bulgaria)

    2006-02-15

    Electric transport measurements of thickness-dependent electronic and ionic conductivity of epitaxial Ag{sub 2}S films are used to split both kinds of conductivity into bulk and surface components. The established considerable electronic and ionic surface conductances demonstrate unambiguously the co-existance of electronic and ionic space charge regions in the vicinity of silver sulfide free surface oriented along the zone axes [1-bar 01-bar ]. The parameters of both space charge layers - surface potential, thickness of the space charge region and concentration of the surface compensating charges, are calculated. It is estimated that for intrinsic silver sulfide, the effective surface potential of (1-bar 01-bar ) Ag{sub 2}S surface is negative, its value being about -610mV at 400K.

  14. Determination of the compositions of the DIGM zone in nanocrystalline Ag/Au and Ag/Pd thin films by secondary neutral mass spectrometry

    Science.gov (United States)

    Molnár, Gábor Y; Shenouda, Shenouda S; Katona, Gábor L; Langer, Gábor A

    2016-01-01

    Summary Alloying by grain boundary diffusion-induced grain boundary migration is investigated by secondary neutral mass spectrometry depth profiling in Ag/Au and Ag/Pd nanocrystalline thin film systems. It is shown that the compositions in zones left behind the moving boundaries can be determined by this technique if the process takes place at low temperatures where solely the grain boundary transport is the contributing mechanism and the gain size is less than the half of the grain boundary migration distance. The results in Ag/Au system are in good accordance with the predictions given by the step mechanism of grain boundary migration, i.e., the saturation compositions are higher in the slower component (i.e., in Au or Pd). It is shown that the homogenization process stops after reaching the saturation values and further intermixing can take place only if fresh samples with initial compositions, according to the saturation values, are produced and heat treated at the same temperature. The reversal of the film sequence resulted in the reversal of the inequality of the compositions in the alloyed zones, which is in contrast to the above theoretical model, and explained by possible effects of the stress gradients developed by the diffusion processes itself.

  15. Optical and electrical properties of p-type AgInSn xS2-x (x = 0-0.04) thin films prepared by spray pyrolysis

    International Nuclear Information System (INIS)

    AgInSn xS2-x (x = 0-0.2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 deg. C from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS2. A p-type conductivity was detected in the Sn-doped samples deposited at 375 deg. C, otherwise they are n-type. The optical properties of AgInSn xS2-x (x 2. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSn xS2-x (x < 2) thin films

  16. Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

    International Nuclear Information System (INIS)

    In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K2S2O8 solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-SiC target. Because of the high resistivity of the SiC layer, around 1.6 MΩ cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K2S2O8 solution has been proposed.

  17. On RF magnetron-sputtering preparation of Ag-Sb-S thin films

    Czech Academy of Sciences Publication Activity Database

    Gutwirth, J.; Wágner, T.; Kotulanová, Eva; Bezdička, Petr; Peřina, V.; Hrdlička, M.; Vlček, Milan; Drašar, Č.; Frumar, M.

    2007-01-01

    Roč. 68, 5-6 (2007), s. 835-840. ISSN 0022-3697 R&D Projects: GA MŠk LC523; GA ČR GA203/06/1368 Institutional research plan: CEZ:AV0Z40320502; CEZ:AV0Z40500505 Keywords : optical properties * plasma deposition * thin films Subject RIV: CA - Inorganic Chemistry Impact factor: 0.899, year: 2007

  18. Antifungal activity of Ag:hydroxyapatite thin films synthesized by pulsed laser deposition on Ti and Ti modified by TiO2 nanotubes substrates

    Science.gov (United States)

    Eraković, S.; Janković, A.; Ristoscu, C.; Duta, L.; Serban, N.; Visan, A.; Mihailescu, I. N.; Stan, G. E.; Socol, M.; Iordache, O.; Dumitrescu, I.; Luculescu, C. R.; Janaćković, Dj.; Miškovic-Stanković, V.

    2014-02-01

    Hydroxyapatite (HA) is a widely used biomaterial for implant thin films, largely recognized for its excellent capability to chemically bond to hard tissue inducing the osteogenesis without immune response from human tissues. Nowadays, intense research efforts are focused on development of antimicrobial HA doped thin films. In particular, HA doped with Ag (Ag:HA) is expected to inhibit the attachment of microbes and contamination of metallic implant surface. We herewith report on nano-sized HA and Ag:HA thin films synthesized by pulsed laser deposition on pure Ti and Ti modified with 100 nm diameter TiO2 nanotubes (fabricated by anodization of Ti plates) substrates. The HA-based thin films were characterized by SEM, AFM, EDS, FTIR, and XRD. The cytotoxic activity was tested with HEp2 cells against controls. The antifungal efficiency of the deposited layers was tested against the Candida albicans and Aspergillus niger strains. The Ti substrates modified with TiO2 nanotubes covered with Ag:HA thin films showed the highest antifungal activity.

  19. Effect of H{sup +} irradiation on the optical properties of vacuum evaporated AgInSe{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, M.C. Santhosh, E-mail: santhoshmc@nitt.edu [Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli, Tamil Nadu 620 015 (India); Pradeep, B. [Solid State Physics Laboratory, Department of Physics, Cochin University of Science and Technology, Cochin, Kerala 682 022 (India)

    2009-07-30

    We prepared polycrystalline AgInSe{sub 2} thin films by vacuum evaporation on glass substrate at a high temperature using the stoichiometric powder. The thin films were characterized by X-ray diffraction and UV-vis-NIR spectroscopy. The samples were subjected to the irradiation of 1.26 MeV protons (H{sup +}). The effect of irradiation on the optical properties has been investigated for different doses of H{sup +}. It is observed that the band gap of silver indium selenide thin films decreases gradually with ion irradiation dose.

  20. Electrochemical and structural characterization of nanocomposite Agy:TiNx thin films for dry bioelectrodes: the effect of the N/Ti ratio and Ag content

    International Nuclear Information System (INIS)

    Highlights: • Agy:TiNx thin films were sputtered with different N/Ti atomic ratios and Ag contents. • The electroactive area increases (1000-fold) with increasing N/Ti atomic ratios. • The films display impedances <10 kΩ at the 1–50 Hz interval (EEG range). • No Ag surface segregation was visible in the under-stoichiometric samples. • The samples with N/Ti atomic ratio = 0.3 (15 at.% Ag) and 0.7 (32 at.% Ag) are the most appropriate for bioelectrode applications. - ABSTRACT: Agy:TiNx nanocomposite thin films sputtered with different N/Ti atomic ratios and Ag atomic contents were characterized from the structural and morphological points of view. Their electrochemical behaviour was studied in a synthetic sweat solution, aiming at selecting a suitable material for biolectrode applications. An increase of the N/Ti atomic ratio, which is accompanied by an increase of the Ag atomic content, leads to a substantial increase of the roughness and porosity of the samples, especially for N/Ti ratios >0.2. For N/Ti atomic ratios up to 0.3 (15 at.% Ag) no metallic Ag segregation is visible in the TiNx matrix. Hence, the possible formation of TiAg and Ti2Ag intermetallics or even a Ag/TiAg/Ti2Ag phase mixture, although not demonstrated, should not be disregarded. As for the N/Ti atomic ratio = 0.7 (32 at.% Ag) sample, the Ag phases are predominantly concentrated near the interface with the substrate. The amount of Ag phases at the surface of the films remains somewhat low for all TiN under-stoichiometric films, even for Ag atomic contents up to 32 at.%. When the TiNx matrix reaches the stoichiometric condition (sample with N/Ti atomic ratio = 1 and 20 at.% Ag), Ag segregation occurs and metallic Ag aggregates are visible at the surface of the film, leading to a substantially different electrochemical behaviour. The impedance of the Agy:TiNx films in synthetic sweat solution is mainly ruled by the roughness/porosity variation, thus the higher the N/Ti atomic ratio

  1. Interface controlled growth of nanostructures in discontinuous Ag and Au thin films fabricated by ion beam sputter deposition for plasmonic applications

    Indian Academy of Sciences (India)

    R Brahma; M Ghanashyam Krishna

    2012-08-01

    The growth of discontinuous thin films of Ag and Au by low energy ion beam sputter deposition is reported. The study focuses on the role of the film–substrate in determining the shape and size of nanostructures achieved in such films. Ag films were deposited using Ar ion energy of 150 eV while the Au films were deposited with Ar ion energies of 250–450 eV. Three types of interfaces were investigated in this study. The first set of film–substrate interfaces consisted of Ag and Au films grown on borosilicate glass and carbon coated Cu grids used as substrates. The second set of films was metallic bilayers in which one of the metals (Ag or Au) was grown on a continuous film of the other metal (Au or Ag). The third set of interfaces comprised of discontinuous Ag and Au films deposited on different dielectrics such as SiO2, TiO2 and ZrO2. In each case, a rich variety of nanostructures including self organized arrays of nanoparticles, nanoclusters and nanoneedles have been achieved. The role of the film–substrate interface is discussed within the framework of existing theories of thin film nucleation and growth. Interfacial nanostructuring of thin films is demonstrated to be a viable technique to realize a variety of nanostructures. The use of interfacial nanostructuring for plasmonic applications is demonstrated. It is shown that the surface Plasmon resonance of the metal nanostructures can be tuned over a wide range of wavelengths from 400 to 700 nm by controlling the film–substrate interface.

  2. Effect of mesh patterning with UV pulsed-laser on optical and electrical properties of ZnO/Ag-Ti thin films

    International Nuclear Information System (INIS)

    In this study, the ZnO/Ag-Ti structure for transparence conducting oxide (TCO) is investigated by optimizing the thickness of the Ag-Ti alloy and ZnO layers. The Ag-Ti thin film is deposited by DC magnetron sputtering and its thicknesses is well controlled. The ZnO thin film is prepared by sol-gel method using zinc acetate as cation source, 2-methoxiethanol as solvent and monoethanolamine as solution stabilizer. The ZnO film deposition is performed by spin-coating technique and dried at 150 deg. C on Corning 1737 glass. Due to the conductivity of ZnO/Ag-Ti is dominated by Ag-Ti, the sheet resistance of ZnO/Ag-Ti decrease dramatically as the thickness of Ag-Ti layer increases. However, the transmittances of ZnO/Ag-Ti become unacceptable for TCO application after the thickness of Ag-Ti layer beyond 6 nm. The as-deposited ZnO/Ag-Ti structure has the optical transmittance of 83% - 500 nm and the low resistivity of 1.2 x 10-5 Ω-cm. Furthermore, for improving the optical and electrical properties of ZnO/Ag-Ti, the thermal treatment using laser is adopted. Experimental results indicate that the transmittance of ZnO/Ag-Ti is improved from 83% to 89% - 500 nm with resistivity of 1.02 x 10-5 Ω-cm after laser drilling. The optical spectrum, the resistance, and the morphology of the ZnO/Ag-Ti will be reported in the study.

  3. Thin films

    International Nuclear Information System (INIS)

    This volume is a compilation of papers presented at the 1990 Spring Meeting of the Materials Research Society in a symposium entitled Thin Films: Stresses and Mechanical Properties II. As indicated by the title, the symposium was the second in a series, the first of which was held at the Fall Meeting in 1988. The importance of thin film mechanical properties is now recognized to the extent that basic characterization techniques such as microindentation and thin film stress measurement are performed routinely, and new characterization techniques are being developed on a daily basis. Many of the papers in the symposium dealt with the developments in these characterization methods and their application to a broad spectrum of materials such as compositionally modulated structures, ion implanted materials, optical coatings, and the numerous metals, ceramics and organics used in semiconductor device manufacture

  4. Synthesis of Ag-doped hydrogenated carbon thin films by a hybrid PVD–PECVD deposition process

    Indian Academy of Sciences (India)

    Majji Venkatesh; Sukru Taktak; Efstathios I Meletis

    2014-12-01

    Silver-doped hydrogenated amorphous carbon (Ag-DLC) films were deposited on Si substrates using a hybrid plasma vapour deposition–plasma enhanced chemical vapour deposition (PVD–PECVD) process combining Ag target magnetron sputtering and PECVD in an Ar–CH4 plasma. Processing parameters (working pressure, CH4/Ar ratio and magnetron current) were varied to obtain good deposition rate and a wide variety of Ag films. Structure and bonding environment of the films were obtained from transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy studies. Variation of processing parameters was found to produce Ag-doped amorphous carbon or diamond-like carbon (DLC) films with a range of characteristics with CH4/Ar ratio exercising a dominant effect. It was pointed out that Ag concentration and deposition rate of the film increased with the increase in d.c. magnetron current. At higher Ar concentration in plasma, Ag content increased whereas deposition rate of the film decreased. FTIR study showed that the films contained a significant amount of hydrogen and, as a result of an increase in the Ag content in the hydrogenated DLC film, $sp^{2}$ bond content also increased. The TEM cross sectional studies revealed that crystalline Ag particles were formed with a size in the range of 2–4 nm throughout an amorphous DLC matrix.

  5. Thin Films

    Czech Academy of Sciences Publication Activity Database

    Šolcová, Olga

    Maribor: Univerza v Mariboru, 2013. [Nanofuture. Maribor (SI), 03.02.2013-07.02.2013] R&D Projects: GA TA ČR TA01020804 Institutional support: RVO:67985858 Keywords : sol-gel methods * thin films * nannomaterials Subject RIV: CI - Industrial Chemistry, Chemical Engineering

  6. Characterization of phase change Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films by laser-irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Alvi, M.A., E-mail: alveema@hotmail.com [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Zulfequar, M. [Department of Physics, Jamia Millia Islamia, New Delhi 110025 (India); Al-Ghamdi, A.A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

    2013-02-15

    Highlights: Black-Right-Pointing-Pointer Effect of laser-irradiation on structure and optical band gap has been investigated. Black-Right-Pointing-Pointer The amorphous nature has been verified by X-ray diffraction and DSC measurements. Black-Right-Pointing-Pointer Laser-irradiation causes a decrease in optical band gap in Ga{sub 15}Se{sub 77}Ag{sub 8} thin films. Black-Right-Pointing-Pointer The decrease in optical band gap can be interpreted on the basis of amorphous-crystalline phase transformation. Black-Right-Pointing-Pointer Optical absorption data showed that the rules of the non-direct transitions predominate. - Abstract: Phase change Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films were prepared by thermal evaporation technique. Thin films were then irradiated by Transverse Electrical Excitation at Atmospheric Pressure (TEA) nitrogen laser for different time intervals. The X-ray structural characterization revealed the amorphous nature of as-prepared films while the laser irradiated films show the polycrystalline nature. Field Emission Scanning Electron Microscope (FESEM) has been used to study the structural changes. The results are discussed in terms of the structural aspects and amorphous to crystalline phase change in Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films. The observed changes are associated with the interaction of the incident photon and the lone-pairs electrons which affects the band gap of the Ga{sub 15}Se{sub 77}Ag{sub 8} chalcogenide thin films. The optical constants of these thin films are measured by using the absorption spectra measurements as a function of photon energy in the wavelength region 400-1100 nm. It is found that the optical band gap decreases while the absorption coefficient and extinction coefficient increases with increasing the laser-irradiation time. The decrease in the optical band gap has been explained on the basis of change in nature of films, from amorphous to polycrystalline state. The dc

  7. Electrical and optical characteristics of Ag/CdTe thin film structures

    International Nuclear Information System (INIS)

    Effect of Ag diffusion on electrical, optical and structural properties of Ag/CdTe structures have been investigated. In the range of 280-420 degrees Celsius the effective coefficient of thermal diffusion and photodiffusion are described. The acceleration of Ag diffusion under illumination was tentatively attributed to photoionization of Ag increasing the interstitial flux of silver. Ag/CdTe structures exposed to annealing were characterized by X-ray diffraction, conductivity-temperature and optical transmission measurements. In XRD patterns of annealed Ag/CdTe structures, besides the intensive peak of cubic CdTe, the weak peaks of Ag2Te phase are also present. The temperature dependence of conductivity and the absorption spectra of annealed Ag/CdTe structures showed the energy levels 0.13 eV and 0.10 eV respectively and nature of these levels were discussed

  8. Electrical and optical characteristics of Ag/CdTe thin film structures

    International Nuclear Information System (INIS)

    Full text : Effect of Ag diffusion on electrical, optical and structural properties of Ag/CdTe structures have been investigated. In the range of 280-420 degrees Celsius the effective coefficient of thermal diffusion and photodiffusion are described. The acceleration of Ag diffusion under illumination was tentatively attributed to photoionization of Ag increasing the interstitial flux of silver. Ag/CdTe structures exposed to annealing were characterized by X-ray diffraction (XRD), conductivity-temperature and optical transmission measurements. In XRD patterns of annealed Ag/CdTe structures, besides the intensive peak of cubic CdTe, the weak peaks of Ag2Te phase are also present. The temperature dependence of conductivity and the absorption spectra of annealed Ag/CdTe structures showed the energy levels 0.13 eV and 0.10 eV respectively and nature of these levels were discussed

  9. Growth of NaCl on thin epitaxial KCl films on Ag(100) studied by SPA-LEED

    Science.gov (United States)

    Marquardt, Christian; Paulheim, Alexander; Sokolowski, Moritz

    2015-11-01

    We investigated the growth of NaCl on thin (100)-oriented films of KCl by spot profile analysis of low energy electron diffraction (SPA-LEED). The underlying question of this investigation was how the system accommodates to the misfit of - 10% between the NaCl and KCl lattices. The KCl films (3 atomic layers thick) were epitaxially grown on a Ag(100) single crystal. We studied the heteroepitaxial growth of NaCl on KCl at 300 K and at 500 K, respectively. At 300 K, the first NaCl monolayer (ML) grows pseudomorphically on the KCl film. From the second layer onward, the NaCl lattice relaxes. The NaCl multilayers roughen, and a small rotational disorder (± 4°) of the NaCl domains is observed. The roughening results from the formation of multilayer islands of limited lateral size due to the misfit to the pseudomorphic first NaCl layer. At a growth temperature of 500 K, no pseudomorphic NaCl layer forms, instead relaxed multilayer island growth of NaCl is observed from the first layer onward. Similarly to the growth at 300 K, we find NaCl multilayer islands of limited lateral size. For both temperatures, we explain this growth behavior by the misfit that makes the adsorption sites at the island edges of the first relaxed NaCl layer less favorable for larger islands, promoting nucleation of multilayer islands.

  10. Strain Distribution of Au and Ag Nanoparticles Embedded in Al2O3 Thin Film

    Directory of Open Access Journals (Sweden)

    Honghua Huang

    2014-01-01

    Full Text Available Au and Ag nanoparticles embedded in amorphous Al2O3 matrix are fabricated by the pulsed laser deposition (PLD method and rapid thermal annealing (RTA technique, which are confirmed by the experimental high-resolution transmission electron microscope (HRTEM results, respectively. The strain distribution of Au and Ag nanoparticles embedded in the Al2O3 matrix is investigated by the finite-element (FE calculations. The simulation results clearly indicate that both the Au and Ag nanoparticles incur compressive strain by the Al2O3 matrix. However, the compressive strain existing on the Au nanoparticle is much weaker than that on the Ag nanoparticle. This phenomenon can be attributed to the reason that Young’s modulus of Au is larger than that of Ag. This different strain distribution of Au and Ag nanoparticles in the same host matrix may have a significant influence on the technological potential applications of the Au-Ag alloy nanoparticles.

  11. Effect of N2/Ar on structure and hardness of TaN-Ag thin films deposited by DC cylindrical magnetron sputtering

    Science.gov (United States)

    Foadi, Farnaz; Darabi, Elham; Reza Hantehzadeh, Mohammad

    2014-05-01

    TaN-Ag thin films were deposited on a 304 stainless steel substrate by cylindrical DC magnetron sputtering using different ratios of nitrogen to argon gas. The N2 percentages were 1.5%, 3%, 4.5%, 7.5%, 10.5% and 15% by volume. The influence of the N2/Ar ratio on the films morphology, structure and hardness was investigated using Atomic Force Microscopy (AFM), Grazing Incidence X-ray Diffraction (GIXRD), and the nanoindentation method. The amounts of Ta and Ag were determined using Energy Dispersive X-ray Spectroscopy (EDS). The thickness of the deposited films was measured by surface step profilometer. The RMS surface roughness increased for N2 percentages up to 7.5% and then decreased. Grazing results showed different TaN phases and Ag crystalline structures. The hardness of all films was much higher than the hardness of bulk silver or tantalum. The highest hardness value was obtained for 1.5% N2 . The EDS results indicated that the Ag/Ta ratio in the deposited films increases with increasing the N2 amount from 1.5% to 15%. The size of Ag islands on the surface was maximized at 7.5% N2 in the gas mixture. The thicknesses of films were in the range of 400-600 nm.

  12. Using ion beams to tune the nanostructure and optical response of co-deposited Ag : BN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Toudert, J [Laboratoire de Metallurgie Physique, UMR CNRS 6630, Batiment SP2MI, Boulevard Marie et Pierre Curie, Teleport 2 Futuroscope, 86962 Chasseneuil (France); Babonneau, D [Laboratoire de Metallurgie Physique, UMR CNRS 6630, Batiment SP2MI, Boulevard Marie et Pierre Curie, Teleport 2 Futuroscope, 86962 Chasseneuil (France); Camelio, S [Laboratoire de Metallurgie Physique, UMR CNRS 6630, Batiment SP2MI, Boulevard Marie et Pierre Curie, Teleport 2 Futuroscope, 86962 Chasseneuil (France); Girardeau, T [Laboratoire de Metallurgie Physique, UMR CNRS 6630, Batiment SP2MI, Boulevard Marie et Pierre Curie, Teleport 2 Futuroscope, 86962 Chasseneuil (France); Yubero, F [Instituto de Ciencia de Materiales de Sevilla, CSIC, Isla de la Cartuja, 41092 Isla de la Cartuja, Sevilla (Spain); Espinos, J P [Instituto de Ciencia de Materiales de Sevilla, CSIC, Isla de la Cartuja, 41092 Isla de la Cartuja, Sevilla (Spain); Gonzalez-Elipe, A R [Instituto de Ciencia de Materiales de Sevilla, CSIC, Isla de la Cartuja, 41092 Isla de la Cartuja, Sevilla (Spain)

    2007-08-07

    The present study is devoted to co-deposited Ag : BN nanocermet thin films and is focused on the influence of ion irradiation conditions on their structural and linear optical properties. Ion irradiation was performed in situ during the growth of the nanocermets using a 50 eV assistance beam (nitrogen/argon or nitrogen-ion assistance) and ex situ on as-grown films using a 120 keV argon-ion beam (post-irradiation). Grazing incidence small-angle x-ray scattering measurements show that (i) as-grown N-assisted films contain prolate spheroidal clusters (height-to-diameter ratio H/D {approx} 1.8), (ii) N/Ar-ion assistance leads to the formation of more elongated clusters (H/D {approx} 2.1) and (iii) post-irradiation leads to a decrease of H/D to a value close to 1. These results are discussed on the basis of atomic diffusion processes involved during the growth of the nanocermets and during the post-irradiation. The optical transmittance spectra of these films measured at normal incidence display one absorption band, due to the excitation of the (1,1) plasmon mode of the clusters. In the case of the as-grown films, an additional band appears at oblique incidence for P-polarized light, as a consequence of the excitation of the (1,0) plasmon mode of the clusters. Our results show that the spectral position of the absorption bands (which can be tuned in the 400-600 nm range) depends on the H/D ratio of the clusters, in good agreement with calculations of optical transmittance considering the nanocomposite layer as a uniaxial anisotropic medium whose dielectric tensor is described by an anisotropic Maxwell-Garnett model.

  13. Using ion beams to tune the nanostructure and optical response of co-deposited Ag : BN thin films

    International Nuclear Information System (INIS)

    The present study is devoted to co-deposited Ag : BN nanocermet thin films and is focused on the influence of ion irradiation conditions on their structural and linear optical properties. Ion irradiation was performed in situ during the growth of the nanocermets using a 50 eV assistance beam (nitrogen/argon or nitrogen-ion assistance) and ex situ on as-grown films using a 120 keV argon-ion beam (post-irradiation). Grazing incidence small-angle x-ray scattering measurements show that (i) as-grown N-assisted films contain prolate spheroidal clusters (height-to-diameter ratio H/D ∼ 1.8), (ii) N/Ar-ion assistance leads to the formation of more elongated clusters (H/D ∼ 2.1) and (iii) post-irradiation leads to a decrease of H/D to a value close to 1. These results are discussed on the basis of atomic diffusion processes involved during the growth of the nanocermets and during the post-irradiation. The optical transmittance spectra of these films measured at normal incidence display one absorption band, due to the excitation of the (1,1) plasmon mode of the clusters. In the case of the as-grown films, an additional band appears at oblique incidence for P-polarized light, as a consequence of the excitation of the (1,0) plasmon mode of the clusters. Our results show that the spectral position of the absorption bands (which can be tuned in the 400-600 nm range) depends on the H/D ratio of the clusters, in good agreement with calculations of optical transmittance considering the nanocomposite layer as a uniaxial anisotropic medium whose dielectric tensor is described by an anisotropic Maxwell-Garnett model

  14. Augmentation of thermoelectric performance of VO2 thin films irradiated by 200 MeV Ag9+-ions

    Science.gov (United States)

    Khan, G. R.; Kandasami, A.; Bhat, B. A.

    2016-06-01

    Swift Heavy Ion (SHI) irradiation with 200 MeV Ag9+-ion beam at ion fluences of 1E11, 5E11, 1E12, and 5E12 for tuning of electrical transport properties of VO2 thin films fabricated by so-gel technique on alumina substrates has been demonstrated in the present paper. The point defects created by SHI irradiation modulate metal to insulator phase transition temperature, carrier concentration, carrier mobility, electrical conductivity, and Seebeck coefficient of VO2 thin films. The structural properties of the films were characterized by XRD and Raman spectroscopy and crystallite size was found to decrease upon irradiation. The atomic force microscopy revealed that the surface roughness of specimens first decreased and then increased with increasing fluence. Both resistance as well as Seebeck coefficient measurements demonstrated that all the samples exhibit metal-insulator phase transition and the transition temperatures decreases with increasing fluence. Hall effect measurements exhibited that carrier concentration increased continuously with increasing fluence which resulted in an increase of electrical conductivity by several orders of magnitude in the insulating phase. Seebeck coefficient in insulating phase remained almost constant in spite of an increase in the electrical conductivity by several orders of magnitude making SHI irradiation an alternative stratagem for augmentation of thermoelectric performance of the materials. The carrier mobility at room temperature decreased up to the beam fluence of 5E11 and then started increasing whereas Seebeck coefficient in metallic state first increased with increasing ion beam fluence up to 5E11 and thereafter decreased. Variation of these electrical transport parameters has been explained in detail.

  15. Coexistent compressive and tensile strain in Ag thin films on Si(1 1 1)-(7×7) surfaces

    Science.gov (United States)

    Goswami, D. K.; Bhattacharjee, K.; Satpati, B.; Roy, S.; Kuri, G.; Satyam, P. V.; Dev, B. N.

    2007-09-01

    Growth and strain behavior of thin Ag films on Si substrates have been investigated by scanning tunneling microscopy, cross-sectional transmission electron microscopy and high resolution X-ray diffraction studies. Ag islands formed on Si at room temperature growth show strongly preferred heights and flat top. At low coverage [ ≳1 monolayer (ML)], Ag islands with (1 1 1) orientation containing two atomic layers of Ag are overwhelmingly formed [D.K. Goswami, K. Bhattacharjee, B. Satpati, S. Roy, P.V. Satyam, B.N. Dev, Surf. Sci. 601 (2007) 603]. A thicker (40 ML) annealed film shows two closely spaced Ag(1 1 1) diffraction peaks—one weak and broad and the other narrow and more intense. The broad peak corresponds to an average expansion (0.21%) and the narrow intense peak corresponds to a contraction (0.17%) of the Ag(1 1 1) planar spacing compared to the bulk value. This coexistence of compressive and tensile strain can be explained in terms of changes in the Ag lattice during the heating-cooling cycle due to thermal expansion coefficient mismatch between Ag and Si.

  16. Preparation of Pd-MgO model catalysts by deposition of Pd from aqueous precursor solutions onto Ag(001)-supported MgO(001) thin films

    OpenAIRE

    Ringleb, Franziska; Sterrer, Martin; Freund, Hans-Joachim

    2013-01-01

    The preparation of Pd–MgO model catalysts via liquid-phase deposition of Pd from aqueous Pd precursor solutions was studied. Thin, single-crystalline MgO(0 0 1) films grown on a Ag(0 0 1) substrate were used as support and allowed surface science techniques such as Auger electron spectroscopy, X-ray photoelectron spectroscopy, scanning tunneling microscopy, and temperature programmed desorption to be applied for characterization. Thin MgO(0 0 1) films were unstable and rapidly dissolved in ac...

  17. Characterization of Ag-doped vanadium oxide (AgxV2O5) thin film for cathode of thin film battery

    International Nuclear Information System (INIS)

    The effect of silver co-sputtering on the characteristics of amorphous V2O5 films, grown by dc reactive sputtering, is investigated. The co-sputtering process influences the growth mechanism as well as the characteristics of the V2O5 films. X-ray diffraction (XRD), Inductively coupled plasma-atomic emission spectrometry (ICP-AES), field emission-scanning electron microscopy (FE-SEM), Fourier transform infrared spectrometry (FT-IR) and X-ray photoelectron spectrometry (XPS) results indicate that the microstructure of the V2O5 films is affected by the rf power of the co-sputtered silver. In addition, an all-solid-state thin film battery with full cell structure of Li/LiPON/AgxV2O5/Pt has been fabricated. It is found that the silver co-sputtered V2O5 cathode film exhibits better cycle performance than an undoped one

  18. Study on the fabrication of transparent electrodes by using a thermal-roll imprinted Ag mesh and anATO thin film

    Science.gov (United States)

    Kim, Sung Jin; Choi, Kyoon; Choi, Se Young

    2016-03-01

    Transparent conductive films have been widely studied because of their potential applications in optoelectronic devices such as paper displays, dye-sensitized solar cells (DSSCs), organic lighting-emitting diodes (OLEDs), organic solar cells and so on. In this paper, we report on a low-resistance, a high-transparents conductive film that can be applied as It a flexible device substrate. In order to the fabricate transparent conductive film, we used a high-resolution roll imprinting method. The following steps were performed: The design and manufacture of an electroforming stamp mold, the fabrication of high resolution roll imprinted on flexible film, and the manufacture of an Ag grid that was filled by using a doctor blade process with a nano-sized Ag paste. Then on patterned Its films, antimony tin oxide was coated with ATO sol solution by using bar the coating method. The fabricated ATO/Ag mesh electrode showed good flexibility, and It exhibited a high optical transmittance of 85.3% in the visible wavelength and a sheet resistance of 41 Ω/sq. Furthermore, the bending test for mechanical properties showed that the ATO/Ag thin film had good flexibility.

  19. Effects of Low Ag Doping on Physical and Optical Waveguide Properties of Highly Oriented Sol-Gel ZnO Thin Films

    OpenAIRE

    Mohamed Dehimi; Tahar Touam; Azeddine Chelouche; Fares Boudjouan; Djamel Djouadi; Jeanne Solard; Alexis Fischer; Azzedine Boudrioua; Abdellaziz Doghmane

    2015-01-01

    A sol-gel dip-coating process was used to deposit almost stress-free highly c-axis oriented zinc oxide (ZnO) thin films onto glass substrates. The effects of low silver doping concentration (Ag/Zn < 1%) on the structural, morphological, optical, and waveguide properties of such films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy, UV-Visible spectrophotometry, and M-lines spectroscopy (MLS). XRD analysis revealed that all the films we...

  20. Microstructure and microwave properties of laser ablated Ag- and Au-doped YBa2Cu3O7-δ thin films

    International Nuclear Information System (INIS)

    Microwave transmission properties such as surface resistance, Rs and magnetic penetration depth, λ of high temperature superconductor (HTS) thin films have been found to critically depend upon the microstructure of films. In the absence of a true epitaxy, in-plane alignment determines the transport properties of HTS films. Extensive work carried out on laser ablated Ag-doped YBa2Cu3O7-δ films has shown that grain enlargement and alignment caused due to the enhanced oxygenation and surfactant action of AgO during in situ growth, significantly improves the critical current density, Jc (highest on SrTiO3: 1.4 x 107 Acm-2 at 77K) and reduces Rs (lowest on LaAlO3: 210μΩ at 77K, 10GHz). Recent results on Au-doping of YBa2Cu3O7-δ films have shown much improved film stability. Another interesting observation is that the film properties being to deteriorate above a certain thickness. This has been studied using atomic force microscopy (AFM). AFM has shown increased granularity with film thickness > 3000 A (with certain growth parameters) which has been found to increase both Rs and λ. The exact value of thickness at which film properties degrade depends upon the growth rate and other growth parameters; grain enlargement and alignment throughout the film is the key to the realization of improved microwave properties. (author)

  1. The structural studies of Ag containing TiO2-SiO2 gels and thin films deposited on steel

    Science.gov (United States)

    Adamczyk, Anna; Rokita, Magdalena

    2016-06-01

    FTIR spectroscopic structural studies of titania-silica monolith samples as well as thin films deposited on steel were described in this work. Thin films were synthesized by the sol-gel method applying the dip coating as separate one-component TiO2 and/or SiO2 layers or as two-component TiO2-SiO2 thin films. Silver nanoparticles were incorporated into the structure from pure SiO2 sol, deposited then as an additional layer in those hybrid multilayers systems. Except the spectroscopic studies, XRD diffraction, SEM microscopy with EDX analysis and AFM microscopy were applied. The structural studies allow to describe and compare the structure and the morphology of thin films, as well those Ag free as Ag containing ones, also by the comparison with the structure of bulk samples. In FTIR spectra, the band observed at about 613 cm-1 can be connected with the presence of the non-tetrahedral cation in the structure and is observed only in the spectra of Ag containing bulk samples and thin films. The bands at 435-467 cm-1 are due to the stretching vibrations of Ti-O bonds or as well to the bending vibrations of O-Si-O one. In the ranges of 779-799 cm-1 and 1027-1098 cm-1, the bands ascribed to the symmetric stretching vibrations and asymmetric vibrations of Si-O-Si connections, respectively, are observed. SEM and AFM images gave the information on the microstructure and the topography of samples surface. XRD measurements confirmed the presence of only amorphous phase in samples up to 500 °C and allowed to observe the tendency of their crystallization.

  2. Two approaches for enhancing the hydrogenation properties of palladium: Metal nanoparticle and thin film over layers

    Indian Academy of Sciences (India)

    Manika Khanuja; B R Mehta; S M Shivaprasad

    2008-11-01

    In the present study, two approaches have been used for enhancing the hydrogenation properties of Pd. In the first approach, metal thin film (Cu, Ag) has been deposited over Pd and hydrogenation properties of bimetal layer Cu (thin film)/Pd(thin film) and Ag(thin film)/Pd(thin film) have been studied. In the second approach, Ag metal nanoparticles have been deposited over Pd and hydrogenation properties of Ag (nanoparticle)/Pd (thin film) have been studied and compared with Ag(thin film)/Pd(thin film) bimetal layer system. The observed hydrogen sensing response is stable and reversible over a number of hydrogen loading and deloading cycles in both bimetallic systems. Alloying between Ag and Pd is suppressed in case of Ag(nanoparticle)/Pd(thin film) bimetallic layer on annealing as compared to Ag (thin film)/Pd(thin film).

  3. Enhanced emission of Pr.sup.3+./sup. -doped LuAG thin film scintillator by co-doping of Sc.sup.3+./sup..

    Czech Academy of Sciences Publication Activity Database

    Kučera, M.; Nikl, Martin; Průša, Petr; Mareš, Jiří A.; Nitsch, Karel; Hanuš, M.; Onderišinová, Z.; Kučerková, Romana

    Wroclaw : Faculty of Chemistry, Wroclaw University, 2010 - (Strek, W.; Zych, E.) ISBN N. [ESTE 2010. Excited States of Transition Elements and Workshop on Luminescence. 04.09.2010-09.09.2010, Wroclaw - Piechowice] R&D Projects: GA ČR GA202/08/0893 Institutional research plan: CEZ:AV0Z10100521 Keywords : Pr 3+ dopant * LuAG thin films * scintillator * Sc 3+ * co-doping Subject RIV: BM - Solid Matter Physics ; Magnetism

  4. Combinatorial development of antibacterial Zr-Cu-Al-Ag thin film metallic glasses

    Science.gov (United States)

    Liu, Yanhui; Padmanabhan, Jagannath; Cheung, Bettina; Liu, Jingbei; Chen, Zheng; Scanley, B. Ellen; Wesolowski, Donna; Pressley, Mariyah; Broadbridge, Christine C.; Altman, Sidney; Schwarz, Udo D.; Kyriakides, Themis R.; Schroers, Jan

    2016-05-01

    Metallic alloys are normally composed of multiple constituent elements in order to achieve integration of a plurality of properties required in technological applications. However, conventional alloy development paradigm, by sequential trial-and-error approach, requires completely unrelated strategies to optimize compositions out of a vast phase space, making alloy development time consuming and labor intensive. Here, we challenge the conventional paradigm by proposing a combinatorial strategy that enables parallel screening of a multitude of alloys. Utilizing a typical metallic glass forming alloy system Zr-Cu-Al-Ag as an example, we demonstrate how glass formation and antibacterial activity, two unrelated properties, can be simultaneously characterized and the optimal composition can be efficiently identified. We found that in the Zr-Cu-Al-Ag alloy system fully glassy phase can be obtained in a wide compositional range by co-sputtering, and antibacterial activity is strongly dependent on alloy compositions. Our results indicate that antibacterial activity is sensitive to Cu and Ag while essentially remains unchanged within a wide range of Zr and Al. The proposed strategy not only facilitates development of high-performing alloys, but also provides a tool to unveil the composition dependence of properties in a highly parallel fashion, which helps the development of new materials by design.

  5. Combinatorial development of antibacterial Zr-Cu-Al-Ag thin film metallic glasses.

    Science.gov (United States)

    Liu, Yanhui; Padmanabhan, Jagannath; Cheung, Bettina; Liu, Jingbei; Chen, Zheng; Scanley, B Ellen; Wesolowski, Donna; Pressley, Mariyah; Broadbridge, Christine C; Altman, Sidney; Schwarz, Udo D; Kyriakides, Themis R; Schroers, Jan

    2016-01-01

    Metallic alloys are normally composed of multiple constituent elements in order to achieve integration of a plurality of properties required in technological applications. However, conventional alloy development paradigm, by sequential trial-and-error approach, requires completely unrelated strategies to optimize compositions out of a vast phase space, making alloy development time consuming and labor intensive. Here, we challenge the conventional paradigm by proposing a combinatorial strategy that enables parallel screening of a multitude of alloys. Utilizing a typical metallic glass forming alloy system Zr-Cu-Al-Ag as an example, we demonstrate how glass formation and antibacterial activity, two unrelated properties, can be simultaneously characterized and the optimal composition can be efficiently identified. We found that in the Zr-Cu-Al-Ag alloy system fully glassy phase can be obtained in a wide compositional range by co-sputtering, and antibacterial activity is strongly dependent on alloy compositions. Our results indicate that antibacterial activity is sensitive to Cu and Ag while essentially remains unchanged within a wide range of Zr and Al. The proposed strategy not only facilitates development of high-performing alloys, but also provides a tool to unveil the composition dependence of properties in a highly parallel fashion, which helps the development of new materials by design. PMID:27230692

  6. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  7. Effect of thickness and Ti interlayers on stresses and texture transformations in thin Ag films during thermal cycling

    International Nuclear Information System (INIS)

    The driving forces for the (111) to (100) texture transformation often observed during annealing of thin face-centered cubic metal films were investigated. Thin passivated silver films were produced with and without Ti adhesion layers. Stresses were measured in situ during heating to induce the texture transformation, and the texture was characterized using x-ray diffraction. Sufficiently thin films did not transform and sufficiently thick films transformed fully. Intermediate thickness films transformed to an extent dependent on thickness, leading to stable mixed textures. In the prevailing thermodynamic model, texture transformation is attributed to minimization of strain and interface energies. However, calculations using the measured stresses, known elastic constants, and estimated interface energies in this model reveal that the stresses are not sufficient to cause the texture transformation and, furthermore, that variations in interface energy cannot lead to the observed behavior. The results suggest that neither the interface energy nor the stress plays decisive roles in the texture transformation

  8. 200 MeV Ag15+ ion beam irradiation effects on spray deposited 5 wt% `Li' doped V2O5 thin film

    Science.gov (United States)

    Kovendhan, M.; Joseph, D. Paul; Manimuthu, P.; Sendilkumar, A.; Asokan, K.; Venkateswaran, C.; Mohan, R.

    2016-05-01

    Lithium 5 wt% doped V2O5 thin film was deposited onto ITO substrate by spray pyrolysis technique. The substrate temperature was kept at 450 °C. 200 MeV Ag15+ ion beams at a fluence of 5×1012 ions/cm2 was irradiated on 5 wt% `Li' doped V2O5 film of thickness 1367 nm. The XRD pattern confirms that the pristine film is non stoichiometry with orthorhombic structure and upon irradiation the crystallinity decreased and an obvious textured growth along (020) plane is induced. Raman peak observed at 917 cm-1 is due to oxygen deficiency. Upon irradiation, the optical transparency and band gap of the film decreased. Electrical transport property study shows that the resistivity increased by one order for the irradiated film.

  9. Growth of Ag thin films on ZnO(0 0 0 -1) investigated by AES and STM

    Energy Technology Data Exchange (ETDEWEB)

    Duriau, E. [Interuniversity Microelectronic Center (IMEC), SPDT-MCA, Kapeldreef 75, B-3001 Leuven (Belgium); Agouram, S. [Dpto. Fisica Aplicada y Electromagnetismo c/Dr. Moliner no. 50, 46100 Burjassot, Valencia (Spain); Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Morhain, C. [Centre de Recherche sur l' HeteroEpitaxie et ses Applications (CRHEA), CNRS, Rue Bernard Gregory, F-06560 Valbonne Sophia-Antipolis (France); Seldrum, T. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Sporken, R. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium); Dumont, J. [Laboratoire de Physique des Materiaux Electroniques (LPME), University of Namur, Rue de Bruxelles 61, B-5000 Namur (Belgium)]. E-mail: jacques.dumont@fundp.ac.be

    2006-11-15

    The growth of Ag films on ZnO(0 0 0 -1) has been investigated by Auger electron spectroscopy (AES) and scanning tunneling microscopy (STM). A high density of islands is nucleated at the earliest stages of the growth. An upstepping mechanism causes these islands to coalesce while the uncovered fraction of the ZnO surface remains constant (30%)

  10. Ohmic contacts of Au and Ag metals to n-type GdN thin films

    Directory of Open Access Journals (Sweden)

    Felicia Ullstad

    2015-05-01

    Full Text Available The rare-earth nitrides appear as attractive alternatives to dilute ferromagnetic semiconductors for spintronics device applications. Most of them combine the properties of the ferromagnet and the semiconductor, an exceedingly rare combination. In this work we have grown n-type polycrystalline semiconducting GdN layers between pre-deposited contacts made of Cr/Au and Cr/Ag. The resistivity of the GdN layers ranges from 4.4×10-4 Ωcm to 3.1×10-2 Ωcm depending on the nitrogen pressure during the growth. The electrical properties of metal/n-type GdN/metal planar junctions are investigated as a function of the temperature. The current voltage characteristics of the junctions were linear for temperatures ranging from 300 K down to 5 K, suggesting an ohmic contact between the Au or Ag metal and the n-type GdN layer.

  11. The effect of strain induced by Ag underlayer on saturation magnetization of partially ordered Fe{sub 16}N{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Meiyin [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Department of Electrical and Computer Engineering, The Center for Micromagnetics and Information Technologies (MINT), University of Minnesota, 200 Union St SE, Minneapolis, Minnesota 55455 (United States); Allard, Lawrence F. [High Temperature Materials Laboratory, Materials Science and Technology Division, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831 (United States); Ji, Nian; Zhang, Xiaowei; Wang, Jian-Ping [Department of Electrical and Computer Engineering, The Center for Micromagnetics and Information Technologies (MINT), University of Minnesota, 200 Union St SE, Minneapolis, Minnesota 55455 (United States); Yu, Guang-Hua [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)

    2013-12-09

    Partially ordered Fe-N thin films were grown by a facing target sputtering process on the surface of a (001) Ag underlayer on MgO substrates. It was confirmed by x-ray diffraction that the Ag layer enlarged the in-plane lattice of the Fe-N thin films. Domains of the ordered α″-Fe{sub 16}N{sub 2} phase within an epitaxial (001) α′-Fe{sub x}N phase were identified by electron diffraction and high-resolution aberration-corrected scanning transmission electron microscopy (STEM) methods. STEM dark-field and bright-field images showed the fully ordered structure of the α″-Fe{sub 16}N{sub 2} at the atomic column level. High saturation magnetization(Ms) of 1890 emu/cc was obtained for α″-Fe{sub 16}N{sub 2} on the Ag underlayer, while only 1500 emu/cc was measured for Fe-N on the Fe underlayer. The results are likely due to a tensile strain induced in the α″-Fe{sub 16}N{sub 2} phase by the Ag structure at the interface.

  12. Enhanced Thermochromic Properties and Solar-Heat Shielding Ability of W(x)V(1-x)O2 Thin Films with Ag Nanowires Capping Layers.

    Science.gov (United States)

    Zhao, Li Li; Miao, Lei; Liu, Cheng Yan; Wang, Hai Long; Tanemura, Sakae; Sun, Li Xian; Gao, Xiang; Zhou, Jian Hua

    2015-11-01

    Considerable efforts have been made to shift the phase transition temperature of metal-doped vanadium dioxide (VO2) films nearer the ambient temperature while maintain the excellent thermochromic properties simultaneously. Here, we describe a facile and economic solution-based method to fabricate W-doped VO2 (V(1-x)W(x)O2) thin films with excellent thermochromic properties for the application of smart windows. The substitutional doping of tungsten atoms notably reduces the phase transition temperature to the ambient temperature and retains the excellent thermochromic property. Furthermore, Ag nanowires (NWs) are employed as capping layers to effectively decrease the thermal emissivity from 0.833 to 0.603, while the original near infrared region (NIR) modulation ability is not severely affected. Besides, the Ag NWs layers further depress the phase transition temperature as well as the hysteresis loop width, which is important to the fenestration application. These solution-grown Ag NWs/V(1-x)W(x)O2 thin films exhibit excellent solar modulation ability, narrowed hysteresis loop width as well as low thermal emissivity, which provide a promising perspective into the practical application of VO2-based smart windows. PMID:26726666

  13. Phase separation and electronic structure of ZnS0.3O0.7 alloy thin film with and without (Ag, Li) co-doping

    International Nuclear Information System (INIS)

    Highlights: • ZnO1−xSx alloy thin films were grown by pulsed laser deposition with and without (Ag, Li) co-doping. • Films are phase separated and the phases were identified by electron diffraction. • Band structure characterization of phases by low loss EELS and ELNES. • Position of Ag, Li and S atoms determined by ELNES. -- Abstract: ZnS0.3O0.7 alloy thin film with and without Ag and Li co-doping are grown by pulsed laser deposition on c-plane sapphire substrate. The films are phase separated in S-rich and S-poor regions. Two and four different phases are observed to form in (Ag, Li)0.05:Zn0.95S0.3O0.7 and ZnS0.3O0.7 films respectively. Different phases and their relative volume fractions have been identified by electron diffraction pattern. The band gap corresponding to each phase is identified by low loss region of high resolution electron energy loss spectra. Band bowing parameter upon S doping is found to be 4.12 eV which closely match with Wien2k based density functional theory calculation utilizing mBJLDA exchange correlation potential. Oxygen positions have been replaced by sulphur in the lattice as confirmed by S L3,2 electron energy loss near edge absorption spectra. High resolution electron energy loss spectroscopy has been used to collect core level spectra of various dopants in order to identify their locations in the lattice. Experimental Ag M5,4 extended energy loss fine structure and Li K electron energy loss near edge structure in (Ag, Li):ZnS0.3O0.7 alloy have been compared with calculated spectra using FEFF code, suggesting that Ag and Li have taken up both the substitution and interstitial positions in the lattice. All the samples are resistive with resistance in the range of a few mega-ohms

  14. Raman monitoring of In and Ag growth on PTCDA and DiMe-PTCDI thin films

    International Nuclear Information System (INIS)

    The formation of In and Ag interfaces with 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) and N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic diimide (DiMe-PTCDI) was investigated by in situ Raman spectroscopy in order to determine the interaction between the metals and the organic molecules. A significant enhancement of internal vibrational modes is observed in all cases, clearly indicating the presence of surface enhanced Raman scattering. The molecules having direct contact with the metal are involved in a weak ground state dynamical charge transfer resulting in a breakdown of selection rules. However, there is no indication for the formation of new chemical bonds. In the case of In deposition on PTCDA, this contradicts previous models of covalent bond formation between In and O atoms in PTCDA. The enhancement factors of the Raman signals can be employed to extract information on indiffusion and morphology of the metals. Both metals exhibit rough morphologies of different degrees and depending on the organic substrate. In addition, In shows the strongest tendency of indiffusion when deposited on PTCDA. This is corroborated by the rapid disappearance of intermolecular, i.e. phonon-like modes in the frequency range below 120 cm-1

  15. Optical and electrical properties and phonon drag effect in low temperature TEP measurements of AgSbSe2 thin films

    Science.gov (United States)

    Namitha Asokan, T.; Urmila, K. S.; Jacob, Rajani; Reena Philip, Rachel; Okram, G. S.; Ganesan, V.; Pradeep, B.

    2014-05-01

    Polycrystalline thin films of silver antimony selenide have been deposited using a reactive evaporation technique onto an ultrasonically cleaned glass substrate at a vacuum of 10-5 torr. The preparative parameters, like substrate temperature and incident fluxes, have been properly controlled in order to get stoichiometric, good quality and reproducible thin film samples. The samples are characterized by XRD, SEM, AFM and a UV—vis—NIR spectrophotometer. The prepared sample is found to be polycrystalline in nature. From the XRD pattern, the average particle size and lattice constant are calculated. The dislocation density, strain and number of crystallites per unit area are evaluated using the average particle size. The dependence of the electrical conductivity on the temperature has also been studied and the prepared AgSbSe2 samples are semiconducting in nature. The AgSbSe2 thin films exhibited an indirect allowed optical transition with a band gap of 0.64 eV. The compound exhibits promising thermoelectric properties, a large Seebeck coefficient of 30 mV/K at 48 K due to strong phonon electron interaction. It shows a strong temperature dependence on thermoelectric properties, including the inversion of a dominant carrier type from p to n over a low temperature range 9-300 K, which is explained on the basis of a phonon drag effect.

  16. Optical and electrical properties and phonon drag effect in low temperature TEP measurements of AgSbSe2 thin films

    International Nuclear Information System (INIS)

    Polycrystalline thin films of silver antimony selenide have been deposited using a reactive evaporation technique onto an ultrasonically cleaned glass substrate at a vacuum of 10−5 torr. The preparative parameters, like substrate temperature and incident fluxes, have been properly controlled in order to get stoichiometric, good quality and reproducible thin film samples. The samples are characterized by XRD, SEM, AFM and a UV—vis—NIR spectrophotometer. The prepared sample is found to be polycrystalline in nature. From the XRD pattern, the average particle size and lattice constant are calculated. The dislocation density, strain and number of crystallites per unit area are evaluated using the average particle size. The dependence of the electrical conductivity on the temperature has also been studied and the prepared AgSbSe2 samples are semiconducting in nature. The AgSbSe2 thin films exhibited an indirect allowed optical transition with a band gap of 0.64 eV. The compound exhibits promising thermoelectric properties, a large Seebeck coefficient of 30 mV/K at 48 K due to strong phonon electron interaction. It shows a strong temperature dependence on thermoelectric properties, including the inversion of a dominant carrier type from p to n over a low temperature range 9–300 K, which is explained on the basis of a phonon drag effect. (semiconductor physics)

  17. Granular L10 FePt:X (X = Ag, B, C, SiOx, TaOx) thin films for heat assisted magnetic recording

    Science.gov (United States)

    Granz, Steven D.; Barmak, Katayun; Kryder, Mark H.

    2013-03-01

    Ordered L10 FePt thin films are of interest as potential Heat Assisted Magnetic Recording media. In order to achieve the microstructure and magnetic properties to support recording at densities beyond 1 Tbit/in2, it is necessary to add segregants into the FePt films. In this work, the effects of a number of segregants, X, on the microstructure and magnetic properties of FePt:X (X = Ag, B, C, SiO x , TaO x ) thin films, deposited by RF sputtering with various volume content (0-50%), various in-situ heating temperatures (450-600 °C), various Ar pressures (10-40 mtorr) and various sputtering powers (25-200 W) onto 1'' Si substrates with a MgO texture (002) underlayer (20 nm), were investigated. It was observed that introducing segregants (B, C, SiO x , and TaO x ) into the FePt reduced ordering and grain size of the FePt:X thin films. Ag was found to offset the reduction of ordering in the FePt:X films. The B, SiO x and TaO x promoted columnar growth whereas C promoted a secondary nucleation layer but produced the least reduction of ordering. By varying the volume content of the segregants, the grain size of the FePt:X can be controllably reduced throughout the 2.5-10 nm range. It was found that TaO x produced the best exchange decoupling, thermal durability, grain isolation and hindered grain coalescence as compared with the films deposited with B, C or SiO x . With the FePt:C:Ag films sputtered at 450 °C, a perpendicular coercivity measured at room temperature as high as 25 kOe was achieved; whereas with B, SiO x , and TaO x , perpendicular coercivities as high as 11 kOe were obtained. These FePt:X thin films with small grain size, columnar microstructure and high coercivity are believed to be favorable for application in Heat Assisted Magnetic Recording. The role of surface energies of FePt and the segregant in columnar growth of FePt grains is discussed.

  18. Synthesis of ZnO Nanowires and Their Photovoltaic Application: ZnO Nanowires/AgGaSe2 Thin Film Core-Shell Solar Cell

    Directory of Open Access Journals (Sweden)

    Elif Peksu

    2015-01-01

    Full Text Available In this investigation, hydrothermal technique was employed for the synthesis of well-aligned dense arrays of ZnO nanowires (NWs on a wide range of substrates including silicon, soda-lime glass (SLG, indium tin oxide, and polyethylene terephthalate (PET. Results showed that ZnO NWs can be successfully grown on any substrate that can withstand the growth temperature (~90°C and precursor solution chemicals. Results also revealed that there was a strong impact of growth time and ZnO seed layer deposition route on the orientation, density, diameter, and uniformity of the synthesized nanowires. A core-shell n-ZnO NWs/p-AgGaSe2 (AGS thin film solar cell was fabricated as a device application of synthesized ZnO nanowires by decoration of nanowires with ~700 nm thick sputtering deposited AGS thin film layer, which demonstrated an energy conversion efficiency of 1.74% under 100 mW/cm2 of simulated solar illumination.

  19. Thin films composed of Ag nanoclusters dispersed in TiO2: Influence of composition and thermal annealing on the microstructure and physical responses

    Science.gov (United States)

    Borges, J.; Rodrigues, M. S.; Lopes, C.; Costa, D.; Couto, F. M.; Kubart, T.; Martins, B.; Duarte, N.; Dias, J. P.; Cavaleiro, A.; Polcar, T.; Macedo, F.; Vaz, F.

    2015-12-01

    Noble metal powders containing gold and silver have been used for many centuries, providing different colours in the windows of the medieval cathedrals and in ancient Roman glasses. Nowadays, the interest in nanocomposite materials containing noble nanoparticles embedded in dielectric matrices is related with their potential use for a wide range of advanced technological applications. They have been proposed for environmental and biological sensing, tailoring colour of functional coatings, or for surface enhanced Raman spectroscopy. Most of these applications rely on the so-called localised surface plasmon resonance absorption, which is governed by the type of the noble metal nanoparticles, their distribution, size and shape and as well as of the dielectric characteristics of the host matrix. The aim of this work is to study the influence of the composition and thermal annealing on the morphological and structural changes of thin films composed of Ag metal clusters embedded in a dielectric TiO2 matrix. Since changes in size, shape and distribution of the clusters are fundamental parameters for tailoring the properties of plasmonic materials, a set of films with different Ag concentrations was prepared. The optical properties and the thermal behaviour of the films were correlated with the structural and morphological changes promoted by annealing. The films were deposited by DC magnetron sputtering and in order to promote the clustering of the Ag nanoparticles the as-deposited samples were subjected to an in-air annealing protocol. It was demonstrated that the clustering of metallic Ag affects the optical response spectrum and the thermal behaviour of the films.

  20. Scintillation efficiency and X-ray imaging with the RE-Doped LuAG thin films grown by liquid phase epitaxy

    International Nuclear Information System (INIS)

    Very thin scintillator imaging plates have recently become of great interest. In high resolution X-ray radiography, very thin scintillator layers of about 5–20 μm are used to achieve 2D-spatial resolutions below 1 μm. Thin screens can be prepared by mechanical polishing from single crystals or by epitaxial growth on single-crystal substrates using the Liquid Phase Epitaxy technique (LPE). Other types of screens (e.g. deposited powder) do no reach required spatial resolutions. This work compares LPE-grown YAG and LuAG scintillator films doped with different rare earth ions (Cerium, Terbium and Europium). Two different fluxes were used in the LPE growth procedure. These LPE films are compared to YAG:Ce and LuAG:Ce screens made from bulk single crystals. Relative light yield was detected by a highly sensitive CCD camera. Scintillator screens were excited by a micro-focus X-ray source and the generated light was gathered by the CCD camera’s optical system. Scintillator 2D-homogeneity is examined in an X-ray imaging setup also using the CCD camera.

  1. Study of NBE emission enhancement with an absence of DL emission from ZnO nanorods through controlled growth on ultra-thin Ag films

    International Nuclear Information System (INIS)

    Highlights: • The growth of ZnO nanorods (NRs) is controlled on ultra-thin Ag layer after modifying its surface properties including particle size, number particles density, inter-particles distance and crystallinity. • Ag layer is not only acting as a catalyst for the vertical growth of ZnO NRs and also the corresponding plasmon resonance frequency is tuned and coupled with the excitonic frequency of ZnO NRs. • This type of hybrid structure leads to strong NBE emission enhancement without a broad deep level emission. The absence of DL emission suggests that there is no oxygen vacancy which is found to be very unusual in ZnO nanorods. • The possible reason for the NBE emission enhancement is explained through annealing of ultra thin Ag inter-layer, surface roughness and density of ZnO nanorods. The NBE emission enhancement on ZnO/Ag has been studied through charge transfers by giving a suitable band diagram. - Abstract: ZnO nanorods (NRs) exhibiting enhanced ultra-violet near band edge (UV-NBE) emission without a broad visible deep level (DL) emission has been investigated on catalytically grown ZnO/Ag hybrid nanostructure. The hybrid structure is fabricated in two steps, (1) Thermal evaporation of ultra-thin catalytic layer of Ag with mass thickness ∼1 nm on glass substrate followed by annealing process from 50 to 250 °C and (2) vertical growth of ZnO NRs by hydrothermal reaction process on all Ag films. The surface properties of Ag layer such as particle size, inter-particle distance, particles number density, surface roughness and surface coverage area were altered through annealing process. Annealing at 100 °C modifies Ag from quasi-amorphous to nanocrystalline leading to high density growth and high aspect ratio of ZnO NRs where as a random and less density growth was realized at 250 °C due to increase of both particle size and inter-particles distance in Ag layer. X-ray diffraction reveals a predominant growth of (0 0 2) plane at 100

  2. Ion-modulated nonlinear electronic transport in carbon nanotube bundle/RbAg4I5 thin film composite nanostructures

    Science.gov (United States)

    Sun, Jia-Lin; Zhang, Wei; Wei, Jinquan; Gu, Bingfu

    2014-01-01

    We have explored the ion-modulated electronic transport properties of mixed ionic-electronic conductor (MIEC) composite nanostructures made of superionic conductor RbAg4I5 films and carbon nanotube (CNT) bundle spiderwebs. Our experimental and theoretical studies indicate that the formation of ion-electron bound states (IEBSs) leads to strong ion-electron interference effect and interesting electronic transport of CNT, such as nonlinear current-voltage (I-V) characteristics and novel temperature dependence of the current. With increasing temperature, the hybrid nanostructures show rich phases with different dependence of current on temperature, which is related to the structural phase transition of RbAg4I5 and the transition of dissociation of IEBSs. The ion-modulation of the electric conductivity in such MIEC composite nanostructures with great tunability has been used to design new ionic-electronic composite nano-devices with function like field effect transistor.

  3. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  4. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  5. Tuning the opto-electrical properties of SnO{sub 2} thin films by Ag{sup +1} and In{sup +3} co-doping

    Energy Technology Data Exchange (ETDEWEB)

    Mouchaal, Younes [Laboratoire de Physique des Couches Minces et Matériaux pour l’Electronique (LPCMME) Université de Oran, BP 1524 EL M-Naouer 31000, Oran (Algeria); Enesca, Alexandru, E-mail: aenesca@unitbv.ro [Center for Renewable Energy Systems and Recycling, R& D Institute of the Transilvania University of Brasov, Eroilor 29 Street, 500036, Brasov (Romania); Mihoreanu, Ciprian [Center for Renewable Energy Systems and Recycling, R& D Institute of the Transilvania University of Brasov, Eroilor 29 Street, 500036, Brasov (Romania); Khelil, Abdelbacet [Laboratoire de Physique des Couches Minces et Matériaux pour l’Electronique (LPCMME) Université de Oran, BP 1524 EL M-Naouer 31000, Oran (Algeria); Duta, Anca [Center for Renewable Energy Systems and Recycling, R& D Institute of the Transilvania University of Brasov, Eroilor 29 Street, 500036, Brasov (Romania)

    2015-09-15

    Graphical abstract: - Highlights: • Polycrystalline SnO{sub 2} tetragonal structure with preferential (1 1 0) orientation. • Silver segregation and oxidation threshold. • Suitable diode-type behavior observed for the samples rich in silver. • Higher silver doping (8–12 at%) increases the grains’ size. - Abstract: In this work transparent thin films of Ag{sup +1}-In{sup +3} co-doped SnO{sub 2} were obtained using robotic spray pyrolysis. The effect of silver doping concentration on their optical, electrical and structural properties was investigated. Silver co-doping was varied between 0 and 12 at% in the precursor solution keeping the concentration of indium fixed at 2 at%. The optical transmittance has values between 90.3 and 82.7%, when the Ag{sup +1} doping ranges from 0 to 12 at%. The X-ray diffraction shows a single SnO{sub 2} phase, for silver doping between 0 and 8 at%, and a new silver oxide phase when the silver increases up to 12 at%. The current–voltage characteristics show diode-like behavior for low and high doping concentrations, corresponding to 2 and 12 at%. The films exhibit photocurrent which is affected by the silver amount in the structure. The highest and most stable generated photocurrent was achieved for samples with 12 at% Ag{sup +1}.

  6. Plasmonic modes in thin films: quo vadis?

    Directory of Open Access Journals (Sweden)

    AntonioPolitano

    2014-07-01

    Recent calculations indicate the emergence of acoustic surface plasmons (ASP in Ag thin films exhibiting quantum well states and in graphene films. The slope of the dispersion of ASP decreases with film thickness. We also discuss open issues in research on plasmonic modes in graphene/metal interfaes.

  7. A Comparison of Modifications Induced by Li3+ and Ag14+ Ion Beam in Spectroscopic Properties of Bismuth Alumino-Borosilicate Glass Thin Films

    Directory of Open Access Journals (Sweden)

    Ravneet Kaur

    2013-01-01

    Full Text Available Ion irradiation effects on the glass network and structural units have been studied by irradiating borosilicate glass thin film samples with 50 MeV Li3+ and 180 MeV Ag14+ swift heavy ions (SHI at different fluence rates ranging from 1012 ions/cm2 to 1014 ions/cm2. Glass of the composition (65-x Bi2O3-10Al2O3-(65-y B2O3-25SiO2 (x = 45, 40; y = 20, 25 has been prepared by melt quench technique. To study the effects of ionizing radiation, the glass thin films have been prepared from these glasses and characterized using XRD, FTIR, and UV-Vis spectroscopic techniques. IR spectra are used to study the structural arrangements in the glass before and after irradiation. The values of optical band gap, Urbach energy, and refractive index have been calculated from the UV-Vis measurements. The variation in optical parameters with increasing Bi2O3 content has been analyzed and discussed in terms of changes occurring in the glass network. A comparative study of the influence of Li3+ ion beam on structural and optical properties of the either glass system with Ag14+ ion is done. The results have been explained in the light of the interaction that SHI undergo on entering the material.

  8. An analysis of the x-ray linear dichroism spectrum for NiO thin films grown on vicinal Ag(001)

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Y.Z.; Zhao, Y.; Arenholz, E.; Young, A.T.; Sinkovic, B.; Qiu, Z.Q.

    2008-05-10

    Antiferromagnetic (AFM) NiO thin films are grown epitaxially on vicinal Ag(118) substrate and investigated by x-ray linear dichroism (XLD). We find that the NiO AFM spin exhibits an in-plane spin reorientation transition from parallel to perpendicular to the step edges with increasing the NiO film thickness. In addition to the conventional L{sub 2} adsorption edge, x-ray linear dichroism (XLD) effect at the Ni L{sub 3} adsorption edge is also measured and analyzed. The result identifies a small energy shift of the L{sub 3} peak. Temperature-dependent measurement confirms that the observed XLD effect in this system at the normal incidence of the x-rays originates entirely from the NiO magnetic ordering.

  9. A comparison of different methods for x-ray diffraction line broadening analysis of Ti and Ag UHV deposited thin films: nanostructural dependence on substrate temperature and film thickness

    International Nuclear Information System (INIS)

    The influence of substrate temperature and film thickness on the nanostructure of titanium (HCP) and silver (FCC) thin films deposited on glass substrates under UHV conditions by electron beam evaporation is investigated. The preferred orientation, nanostrain and stacking and twin fault probabilities in Ag and Ti films are determined as a function of film thickness and substrate temperature. A (111) preferred orientation is observed for silver films, which is dependent on both the film thickness and substrate temperature, with the highest value at a substrate temperature of 500 K. Ti/glass films showed a (002) preferred orientation. Nanostructural parameters such as the crystallite size (size of coherently diffracting domains) and nanostrain are evaluated using the Scherrer and Stocks-Wilson relations, the Williamson-Hall plot, and the single-Voigt (SV), double-Voigt (DV) and Warren-Averbach (WA) methods. Analysis of the results obtained using these methods showed that the most suitable approaches to x-ray diffraction line broadening analysis, applicable to both FCC and HCP polycrystalline thin film structures, are SV, DV and WA. The results show that the crystallite sizes increase with substrate temperature and film thickness, while the nanostrain and lattice constants decrease with thickness. The crystallite size distribution function was obtained from the size broadened part of the DV function, and the results show a shift in the maximum to larger sizes with increasing temperature and thickness

  10. Photocathode tunability: The photoemissive properties of ultra-thin multilayered MgO/Ag/MgO films synthesized by pulsed laser deposition

    Science.gov (United States)

    Velazquez, Daniel Gomez

    Much of the early development of photocathode materials was aimed at the growth of photoemissive thin films with low work function, and high quantum efficiency (QE). It has been shown, both theoretically and experimentally, that metal-insulator junctions can lead to the modification of the work function and QE for coverages of a few monolayers of metal oxides on metallic substrates. However, the production of electron beams suitable for new photoinjector technologies often requires low emittance beams from the cathode itself. A theoretical model [Phys. Rev. Lett. 104, 046801 (2010)] based on a multilayered structure of MgO/Ag(001)/MgO with 4 monolayers of Ag(001) flanked by n monolayers (ML) of MgO indicates the possibility to reduce the surface work function and photoelectron beam emittance when the thickness n of the MgO layers is 2 or 3 monolayers. These predictions were tested experimentally. Synthesis of multilayered MgO/Ag/MgO films was performed using a custom-built pulsed laser deposition (PLD) system. In-situ growth monitoring was carried out by Reflection High-Energy Electron Diffraction (RHEED). Ex-situ techniques such as Scanning Tunneling Microscopy (STM), Scanning Electron Microscopy/Energy Dispersive Spectroscopy (EDS) and Photoelectron Spectroscopy (PES) were used to show the formation of the crystalline and chemical structure. A custom-built Kelvin Probe/photocurrent-detector system was used to measure the work function and QE of the samples. Angle Resolved Photoelectron Spectroscopy was used to measure the angular photoelectron yield. Simultaneous reduction of work function and increase of QE was observed for (001) oriented multilayers of various thicknesses with respect to that of a bare Ag/MgO(001) surface. Work function measurements of multilayers of various thicknesses in the (111) orientation also showed a monotonic reduction with respect to that of a bare Ag/Si(111) surface. Angular emission was compared for a MgO/Ag/MgO multilayer

  11. Microstructure and temperature dependence of microwave penetration depth of Ag doped Y1Ba2Cu3O7-x thin films

    International Nuclear Information System (INIS)

    We report the measurements of magnetic penetration depth λ(T) of Ag-doped YBa2Cu3O7-δ (YBCO) thin films in the thickness rAe 1500-4000 A and temperature rAe 18-88 K. The films are in situ grown by laser ablation on LaAlO3 substrates. The penetration depth measurements are performed by microstrip resonator technique. A correlation of λ(T) with the film microstructure observed with atomic force microscopy has shown that λ(T) depends critically on the film microstructure. Temperature dependence of magnetic penetration depth has also been studied for best quality films. The experimental results are discussed in terms of BCS theory (s-wave pairing) and d-wave Pairing with and without unitary scattering. The results are found to be best fitted to the d-wave model with unitary scattering limit. Near Tc, we have also compare the (3D) XY critical regime and the Ginzburg-Landau (GL) behaviour

  12. Investigation on the dielectric response of NdMnO3/LSAT thin films: Effect of 200 MeV Ag+15 ion irradiation

    Science.gov (United States)

    Udeshi, Malay; Vyas, Brinda; Trivedi, Priyanka; Katba, Savan; Ravalia, Ashish; Solanki, P. S.; Shah, N. A.; Asokan, K.; Ojha, S.; Kuberkar, D. G.

    2015-12-01

    We report the results of the modifications in structural and dielectric behaviour of pulsed laser deposited NdMnO3 manganite thin films grown on (1 0 0) single crystalline (LaAlO3)0.3 (Sr2AlTaO6)0.7 substrate irradiated with the 200 MeV Ag+15 ion irradiation having different fluences, ∼5 × 1010, ∼5 × 1011, ∼5 × 1012 ions/cm2. Structural strain was quantified using analysis of X-ray Diffraction data while Rutherford Backscattering measurements were performed on pristine NdMnO3 film to confirm the elemental composition, thickness and oxygen content. Dielectric measurements performed on all the irradiated films show that, the dielectric constant decreases with increase in ion fluence which has been correlated with the irradiation induced increase in strain at the film-substrate interface. The dielectric relaxation behaviour of pristine and irradiated NdMnO3 films have been understood by fitting the dielectric data using the Cole-Cole plots.

  13. Enhancement of wettability and antibiotic loading/release of hydroxyapatite thin film modified by 100 MeV Ag{sup 7+} ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Elayaraja, K. [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Rajesh, P. [Biomedical Technology Wing, Sree Chitra Tirunal Institute for Medical Sciences and Technology, Poojappura, Thiruvananthapuram 695 012 (India); Ahymah Joshy, M.I.; Sarath Chandra, V.; Suganthi, R.V. [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Kennedy, J. [National Isotope Centre, GNS Science, 30 Gracefield Road, Lower Hutt (New Zealand); Kulriya, P.K.; Sulania, I.; Asokan, K.; Kanjilal, D.; Avasthi, D.K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Varma, H.K. [Biomedical Technology Wing, Sree Chitra Tirunal Institute for Medical Sciences and Technology, Poojappura, Thiruvananthapuram 695 012 (India); Narayana Kalkura, S., E-mail: kalkurasn@annauniv.edu [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer Reduction in particle size on irradiation leading to nanosized HAp. Black-Right-Pointing-Pointer Enhancement of surface roughness and bioactivity on irradiation. Black-Right-Pointing-Pointer Irradiation at lower fluence transforms the surface hydrophobic. Black-Right-Pointing-Pointer The surface turned hydrophilic at higher fluence. Black-Right-Pointing-Pointer Improved drug (amoxicillin) loading on irradiated samples. - Abstract: The effect of swift heavy 100 MeV Ag{sup 7+} ions irradiation was studied on hydroxyapatite (HAp) thin film prepared by pulsed laser deposition technique (PLD). The GIXRD analysis confirmed the absence of any phase in the HAp phase due to irradiation. In addition, there was a considerable decrease in crystallinity and crystallite size on irradiation. There was no significant variation in the stoichiometry of the irradiated films. Irradiation seemed to decrease the optical band gap energy of HAp thin films. The surface roughness, wettability and bioactivity were improved on irradiation of the samples. Amount of amoxicillin loading/release increased (10%) in ion beam irradiated (1 Multiplication-Sign 10{sup 12} ions cm{sup -2}) sample. Irradiated sample showed fast rate of amoxicillin (AMX) release than the pristine. Bactericidal effect was found to increase on irradiation. Surface modified and antibiotics incorporated HAp coated titanium implants may be used to prevent post-surgical infections and to promote bone-bonding of orthopedic devices.

  14. Enhancement of wettability and antibiotic loading/release of hydroxyapatite thin film modified by 100 MeV Ag7+ ion irradiation

    International Nuclear Information System (INIS)

    Highlights: ► Reduction in particle size on irradiation leading to nanosized HAp. ► Enhancement of surface roughness and bioactivity on irradiation. ► Irradiation at lower fluence transforms the surface hydrophobic. ► The surface turned hydrophilic at higher fluence. ► Improved drug (amoxicillin) loading on irradiated samples. - Abstract: The effect of swift heavy 100 MeV Ag7+ ions irradiation was studied on hydroxyapatite (HAp) thin film prepared by pulsed laser deposition technique (PLD). The GIXRD analysis confirmed the absence of any phase in the HAp phase due to irradiation. In addition, there was a considerable decrease in crystallinity and crystallite size on irradiation. There was no significant variation in the stoichiometry of the irradiated films. Irradiation seemed to decrease the optical band gap energy of HAp thin films. The surface roughness, wettability and bioactivity were improved on irradiation of the samples. Amount of amoxicillin loading/release increased (10%) in ion beam irradiated (1 × 1012 ions cm−2) sample. Irradiated sample showed fast rate of amoxicillin (AMX) release than the pristine. Bactericidal effect was found to increase on irradiation. Surface modified and antibiotics incorporated HAp coated titanium implants may be used to prevent post-surgical infections and to promote bone-bonding of orthopedic devices.

  15. Impact-driven effects in thin-film growth: steering and transient mobility at the Ag(110) surface

    International Nuclear Information System (INIS)

    Low-energy atomic impacts on the Ag(110) surface are investigated by molecular dynamics simulations based on reliable many-body semiempirical potentials. Trajectory deflections (steering) caused by the atom-surface interaction are observed, together with impact-following, transient-mobility effects. Such processes are quantitatively analysed and their dependence on the initial kinetic energy and on the impinging direction is discussed. A clear influence of the surface anisotropy on both steering and transient mobility effects is revealed by our simulations for the simple isolated-atom case and in the submonolayer-growth regime. For the latter case, we illustrate how steering and transient mobility affect the film morphology at the nanoscale

  16. Temperature studies of optical parameters of (Ag3AsS3)0.6(As2S3)0.4 thin films prepared by rapid thermal evaporation and pulse laser deposition

    Science.gov (United States)

    Studenyak, I. P.; Kutsyk, M. M.; Buchuk, M. Yu.; Rati, Y. Y.; Neimet, Yu. Yu.; Izai, V. Yu.; Kökényesi, S.; Nemec, P.

    2016-02-01

    (Ag3AsS3)0.6(As2S3)0.4 thin films were deposited using rapid thermal evaporation (RTE) and pulse laser deposition (PLD) techniques. Ag-enriched micrometre-sized cones (RTE) and bubbles (PLD) were observed on the thin film surface. Optical transmission spectra of the thin films were studied in the temperature range 77-300 K. The Urbach behaviour of the optical absorption edge in the thin films due to strong electron-phonon interaction was observed, the main parameters of the Urbach absorption edge were determined. Temperature dependences of the energy position of the exponential absorption edge and the Urbach energy are well described in the Einstein model. Dispersion and temperature dependences of refractive indices were analysed; a non-linear increase of the refractive indices with temperature was revealed. Disordering processes in the thin films were studied and compared with bulk composites, the differences between the thin films prepared by RTE and PLD were analysed.

  17. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  18. Study of semiconducting parameters in dark as well as in presence of light for Se90X10 (X=Ag,In) thin films

    Science.gov (United States)

    Singh, N. K.; Kumar, Anjani; Kumar, D.; Shukla, S.

    2016-05-01

    The present paper reports the study of semiconducting parameters (activation energy and pre-exponential factor) in glassy samples of Se90X10 (X= Ag, In) in dark as well as in presence of light. Temperature dependence of dark and photo-conductivity is measured in amorphous thin films in the temperature range 300-378 K and in the intensity range 2000-18000 Lux. A straight line between lnσ0 and ΔE indicates the presence of Meyer - Neldel (MN) rule in dark as well as in presence of light. Linear dependence of ln(σ0) on ΔE in case of amorphous material indicate that the conduction band tails a finite energy distance towards the valence band and a Fermi level which is controlled by fixed dominant hole levels deeper in the gap.

  19. Carbon thin film thermometry

    Science.gov (United States)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  20. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  1. Fabrication of amorphous Zr48Cu36Al8Ag8 thin films by ion beam sputtering and their corrosion behavior in SBF for bio implants

    International Nuclear Information System (INIS)

    Highlights: •The deposited alloys were shown to have amorphous structure. •Coated specimen had higher corrosion resistance in SBF. •Coatings were non-cytotoxic in nature. -- Abstract: The growth of multi component amorphous Zr48Cu36Al8Ag8 thin film metallic glasses (TFMGs) using single target ion beam sputtering has been systematically investigated. The as prepared sputtering target was crystalline in nature. The presence of the constituent elements was identified from EPMA and AES analysis. An atomically disordered structure was observed by micro X-ray diffraction, electron diffraction and high resolution transmission electron microscopy. Glassy films with atomically smooth surfaces of the order of 0.4 nm with higher nanohardness of 9.33 GPa and Young’s modulus of 117 GPa compared to their crystalline substrate was observed from nanoindentation analysis. The study of in vitro corrosion of these coatings on implantable 316L stainless steel substrate in simulated body fluid (SBF) indicated that the as sputtered specimen had higher corrosion resistance without any localized pitting

  2. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  3. Dependence of Quantum Yields on Size of Ag Nano-particle Embedded in BaO Thin Film

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Theoretical dependence of the quantum yields on the size of Ag nano-particle distribution from 0.8nm to 37nm embedded in BaO semiconductor is discussed. The calculation results show that the increase in Ag nano-particle diameter leads to the increase of the quantum yield threshold and the emergence of the rough Gaussian form, the results also show that the greater increase in Ag nano-particle diameter causes the emergence of the exact Gaussian form and makes the peaks rise up.

  4. Ferroelectric thin films

    International Nuclear Information System (INIS)

    The area of ferroelectric thin films has expanded rapidly recently with the advent of high quality multi-oxide deposition technology. Advances in thin film quality has resulted in the realization of new technologies not achievable through classical bulk ceramic processing techniques. An example of this progress is the co-processing of ferroelectric thin films with standard semiconductor silicon and GaAs integrated circuits for radiation hard, non-volatile memory products. While the development of this class of products is still embryonic, the forecasted market potential is rapidly out distancing the combined developmental effort. Historically the greatest use of bulk ferroelectric material has been in sensor technology, utilizing the pyroelectric and piezoelectric properties of the material. By comparison, a relatively small development effort has been reported for ferroelectric thin film senor technology, a field sure to provide exciting advances in the future. The papers in this proceedings volume were presented at the first symposium dedicated to the field of ferroelectric thin films held by the Materials Research Society at the Spring 1990 Meeting in San Francisco, CA, April 16-20, 1990. The symposium was designed to provide a comprehensive tutorial covering the newest advances of ferroelectric thin films, including material systems, new deposition techniques and physical, electrical and electro-optic characterization

  5. Laser irradiation of ZnO:Al/Ag/ZnO:Al multilayers for electrical isolation in thin film photovoltaics

    OpenAIRE

    Crupi, Isodiana; Boscarino, Stefano; Torrisi, Giacomo; Scapellato, Giorgia; Mirabella, Salvatore; Piccitto, Giovanni; Simone, Francesca; TERRASI Antonio

    2013-01-01

    Laser irradiation of ZnO:Al/Ag/ZnO:Al transparent contacts is investigated for segmentation purposes. The quality of the irradiated areas has been experimentally evaluated by separation resistance measurements, and the results are complemented with a thermal model used for numerical simulations of the laser process. The presence of the Ag interlayer plays two key effects on the laser scribing process by increasing the maximum temperature reached in the structure and accelerating the cool down...

  6. Microwave characteristics of sol-gel based Ag-doped (Ba{sub 0.6}Sr{sub 0.4})TiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Kyoung-Tae; Kim, Cheolbok [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States); Senior, David E. [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States); Department of Electrical and Electronic Engineering, Universidad Tecnológica de Bolívar Cartagena, 130011 Colombia (Colombia); Kim, Dongsu [Packaging Research Center, Korea Electronics Technology Institute, Gyeonggi-do, 463-816 (Korea, Republic of); Yoon, Yong-Kyu, E-mail: ykyoon@ece.ufl.edu [Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611 (United States)

    2014-08-28

    Dielectric Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films with a different concentration of Ag-dopant of 0.5, 1, 1.5, 2, 3, and 5 mol % have been prepared using an alkoxide-based sol-gel method on a Pt(111)/TiO{sub 2}/SiO{sub 2}/Si substrate and their surface morphology and crystallinity have been examined using scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis, respectively. An on-chip metal-insulator-metal capacitor has been fabricated with the prepared thin film ferroelectric sample. Concentric coplanar electrodes are used for high frequency electrical characterization with a vector network analyzer and a probe station. The SEM images show that increasing Ag doping concentration leads to a decrease in grain size. XRD reveals that the fabricated films show good BST crystallinity for all the concentration while a doping concentration of 5 mol % starts to show an Ag peak, implying a metallic phase. Improved microwave dielectric loss properties of the BST thin films are observed in a low Ag doping level. Especially, BST with an Ag doping concentration of 1 mol % shows the best properties with a dielectric constant of 269.3, a quality factor of 48.1, a tunability at the electric field of 100 kV/cm of 41.2 %, a leakage-current density of 1.045 × 10{sup −7}A/cm{sup 2} at an electric field of 100 kV/cm and a figure of merit (defined by tunability (%) divided by tan δ (%)) of 19.59 under a dc bias voltage of 10 V at 1 GHz. - Highlights: • High quality Ag-doped Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) thin films were derived by the sol-gel method. • Doped Ag replaced the A site ions in the ABO{sub 3} type structure. • Doped Ag helped lower leakage current by filling oxygen vacancies, which is a leakage path. • Microwave characteristics of low dielectric loss and good tunability were confirmed. • Great potential is envisioned for low loss tunable microwave applications.

  7. Evaporated VOx Thin Films

    Science.gov (United States)

    Stapinski, Tomasz; Leja, E.

    1989-03-01

    VOx thin films on glass were obtained by thermal evaporation of V205, powder. The structural investigations were carried out with the use of X-ray diffractometer. The electrical properties of the film were examined by means of temperature measurements of resistivity for the samples heat-treated in various conditions. Optical transmission and reflection spectra of VOX films of various composition showed the influence of the heat treatment.

  8. The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications

    Directory of Open Access Journals (Sweden)

    A. Tombak

    2015-01-01

    Full Text Available In the current paper, the physical properties and microelectronic parameters of direct current (DC sputtered p-type CuO film and diode have been investigated. The film of CuO as oxide and p-type semiconductor is grown onto glass and n-Si substrates by reactive DC sputtering at 250 °C. After deposition, a post-annealing procedure is applied at various temperatures in ambient. Through this research, several parameters are determined such structural, optical and electrical magnitudes. The thickness of CuO thin films goes from 122 to 254 nm. A (111-oriented cubic crystal structure is revealed by X-ray analysis. The grain size is roughly depending on the post-annealing temperature, it increases with temperature within the 144–285 nm range. The transmittance reaches 80% simultaneously in visible and infrared bands. The optical band gap is varied between 1.99 and 2.52 eV as a result of annealing temperature while the resistivity and the charge carrier mobility decrease with an increase in temperature from 135 to 14 Ω cm and 0.92 to 0.06 cm2/Vs, respectively. The surface of samples is homogenous, bright dots are visible when temperature reaches the highest value. As a diode, Ag/CuO/n-Si exhibits a non-ideal behavior and the ideality factor is about 3.5. By Norde method, the barrier height and the series resistance are extracted and found to be 0.96 V and 86.6 Ω respectively.

  9. SiO2/TiO2/n-Si/Ag(Cr)/TiO2 thin films with superhydrophilicity and low-emissivity

    Science.gov (United States)

    Loka, Chadrasekhar; Ryeol Park, Kyoung; Lee, Kee-Sun

    2016-01-01

    In this study, SiO2/TiO2/n-Si/Ag(Cr)/TiO2 multilayer structures have been designed and deposited by the RF and DC magnetron sputtering at room temperature. The as-deposited TiO2/glass films which are initially amorphous in nature were subjected to post annealing at 673 K for anatase phase TiO2. The anatase TiO2 films showed an optical bandgap ˜3.32 eV. The Ag(Cr)/TiO2 showed very low-emissivity (low-e) value ˜0.081 which is evaluated by using the sheet resistance (6.51 Ω/□) of the films. All the deposited films showed high visible transmittance (˜81%) and high infrared reflectance (72%) which are recorded by using the UV-vis-NIR spectrophotometer. In addition, experimentally obtained optical properties were in good agreement with the simulation data. The TiO2/n-Si heterojunction concept has been employed to enhance the superhydrophilicity of the deposited multilayer stack, TiO2/n-Si/Ag(Cr)/TiO2 films exhibited best superhydrophilicity with water contact angle ˜2°. The deposited multilayer structures SiO2/TiO2/n-Si/Ag(Cr)/TiO2 and TiO2/n-Si/Ag(Cr)/TiO2 achieved significant low-e and superhydrophilicity.

  10. Heterogeneity in Polymer Thin Films

    OpenAIRE

    Kanaya, Toshiji; Inoue, Rintaro; Nishida, Koji

    2011-01-01

    In the last two decades very extensive studies have been performed on polymer thin films to reveal very interesting but unusual properties. One of the most interesting findings is the decrease in glass transition temperature Tg with film thickness in polystyrene (PS) thin film supported on Si substrate. Another interesting finding is apparent negative thermal expansivity in glassy state for thin films below ∼25 nm. In order to understand the unusual properties of polymer thin films we have st...

  11. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  12. Thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K; Ullal, H S

    1989-05-01

    Thin films are considered a potentially attractive technological approach to making cost-effective electricity by photovoltaics. Over the last twenty years, many have been investigated and some (cadmium telluride, copper indium diselenide, amorphous silicon) have become leading candidates for future large-scale commercialization. This paper surveys the past development of these key thin films and gives their status and future prospects. In all cases, significant progress toward cost-effective PV electricity has been made. If this progress continues, it appears that thin film PV could provide electricity that is competitive for summer daytime peaking power requirements by the middle of the 1990s; and electricity in a range that is competitive with fossil fuel costs (i.e., 6 cents/kilowatt-hour) should be available from PV around the turn of the century. 22 refs., 9 figs.

  13. Thin film temperature sensor

    Science.gov (United States)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  14. Swift heavy ion (SHI) modification of Ag/Au-TiO2 nanocomposite thin films prepared by co-sputtering

    International Nuclear Information System (INIS)

    Ag-TiO2 and Au-TiO2 nanocomposites with different volume fractions of metal nanoparticles were prepared by co-sputtering. The morphology of these nanocomposites was investigated by transmission electron microscopy (TEM). Metal volume fractions were determined by SEM-EDX. Optical characterization of these nanocomposites was carried out using UV/Vis/NIR spectroscopy. The nanocomposites were then irradiated by swift heavy ions (SHI) with 100 MeV (Ag8+ ions) at different fluences ranging from 1 X 1012 to 1 X 1013 ions/cm2. The extinction spectra of the pristine samples show plasmon resonances at wavelengths which depend on the volume fraction of metal, particle size and morphology of the composites. The influence of the SHI fluences, on the microstructure and the extinction spectra were observed. The changes in the properties of these nanocomposites are discussed in terms of ion-material interactions

  15. Thin Film Microbatteries

    International Nuclear Information System (INIS)

    Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm2. For very small battery areas, 2, microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li+ ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

  16. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  17. Reactivity of Ultra-Thin ZnO Films Supported by Ag(111) and Cu(111): A Comparison to ZnO/Pt(111)

    OpenAIRE

    Pan, Q.; B. Liu; McBriarty, M.; Martynova, Y.; Groot, I. de; Wang, S.; Bedzyk, M.; Shaikhutdinov, S.; Freund, H.

    2014-01-01

    We studied structure and reactivity of ZnO(0001) ultrathin films grown on Ag(111) and Cu(111) single crystal surfaces. Structural characterization was carried out by scanning tunneling microscopy, Auger electron spectroscopy, low-energy electron diffraction, and temperature programmed desorption. The CO oxidation behavior of the films was studied at low temperature (450 K) at near atmospheric pressures using gas chromatography. For ZnO/Cu(111), it is shown that under reaction conditions ZnO r...

  18. 银基复合透明导电薄膜作为薄膜太阳能电池前电极的研究%The research on Ag/TCO tandem film front electrode for thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    陈宇; 曾祥斌; 陈晓晓

    2015-01-01

    提出采用超薄银薄膜和具有陷光结构的薄TCO薄膜组成的复合膜层作为薄膜太阳能电池前电极,有效利用了超薄银膜的高电导性、高透过性,并解决了单银膜无法制作陷光结构以及在产业化生产过程中存在的激光选择性刻划问题。实验采用直流磁控溅射法在9个不同厚度的SnO2:F薄膜导电玻璃上制备方阻为3/,透过率为89%,厚度为10-15nm的超薄银膜构成前电极,并采用相同的工艺制作成单节的非晶硅薄膜太阳能电池组件,结果表明,方阻为80/的SnO2:F薄膜与超薄银膜构成的前电极能获得最佳的非晶硅薄膜太阳能电池输出性能,相比于普通的非晶硅薄膜太阳能电池输出功率提升了4%。%An Ag/TCO tandem film are used as front electrode of thin film solar cells, which are composed of super thin Ag film and a textured thin TCO film. This Ag/TCO tandem film has the advantage of high transparency and high conductivity of super thin Ag film. Meanwhile, it solved the laser scribing problems when use Ag film as front electrode in the industry manufacturing processes of thin film solar cells. In experimental, 9 glasses with different thickness SnO2:F film on it are deposited 3/, optical transparent 89%, thickness in 10-15nm super thin Ag film with DC magnet sputtering technology. And these samples are manufactured as a-Si thin film solar panels in same processes. The result shows that when the SnO2:F film have a 80/ sheet resistance it could get the best performance in a-Si solar cells with 4% increase in output power than traditional a-Si solar cells.

  19. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  20. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  1. Preparation and characterization of metallic supported thin Pd-Ag membranes for hydrogen separation

    OpenAIRE

    Fernandez, Ekain; Medrano, Jose Antonio; Melendez, Jon; Parco, Maria; Viviente, J.L.; van Sint Annaland, Martin; Gallucci, Fausto; Pacheco Tanaka, David A.

    2015-01-01

    This paper reports the preparation and characterization of thin-film (4-5 µm thick) Pd-Ag metallic supported membranes for high temperature applications. Various thin film membranes have been prepared by depositing a ceramic interdiffusion barrier layer prior to the simultaneous Pd-Ag electroless plating deposition. Two deposition techniques for ceramic layers (made of zirconia and alumina) have been evaluated: atmospheric plasma spraying and dip coating of a powder suspension. Initially, the...

  2. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  3. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  4. Protein Thin Film Machines

    OpenAIRE

    Federici, Stefania; Oliviero, Giulio; Hamad-Schifferli, Kimberly; Bergese, Paolo

    2010-01-01

    We report the first example of microcantilever beams that are reversibly driven by protein thin film machines fuelled by cycling the salt concentration of the surrounding solution. We also show that upon the same salinity stimulus the drive can be completely reversed in its direction by introducing a surface coating ligand. Experimental results are throughout discussed within a general yet simple thermodynamic model.

  5. Thin film scintillators

    Science.gov (United States)

    McDonald, Warren; McKinney, George; Tzolov, Marian

    2015-03-01

    Scintillating materials convert energy flux (particles or electromagnetic waves) into light with spectral characteristic matching a subsequent light detector. Commercial scintillators such as yttrium aluminum garnet (YAG) and yttrium aluminum perovskite (YAP) are commonly used. These are inefficient at lower energies due to the conductive coating present on their top surface, which is needed to avoid charging. We hypothesize that nano-structured thin film scintillators will outperform the commercial scintillators at low electron energies. We have developed alternative thin film scintillators, zinc tungstate and zinc oxide, which show promise for higher sensitivity to lower energy electrons since they are inherently conductive. Zinc tungstate films exhibit photoluminescence quantum efficiency of 74%. Cathodoluminescence spectroscopy was applied in transmission and reflection geometries. The comparison between the thin films and the YAG and YAP commercial scintillators shows much higher light output from the zinc tungstate and zinc oxide at electron energies less than 5 keV. Our films were integrated in a backscattered electron detector. This detector delivers better images than an identical detector with commercial YAG scintillator at low electron energies. Dr. Nicholas Barbi from PulseTor LLC, Dr. Anura Goonewardene, NSF Grants: #0806660, #1058829, #0923047.

  6. Effect of Rapid Thermal Processing on the structural and device properties of (Ag,Cu)(In,Ga)Se2 thin film solar cells

    International Nuclear Information System (INIS)

    (AgwCu1−w)(In1−xGax)Se2 alloy absorber layers with w ≈ 0.8 and x ≈ 0.78 ratios were deposited using multi-source elemental evaporation and analyzed by glancing incidence X-ray diffraction, scanning electron microscopy combined with energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy. The effect of Rapid Thermal Processing (RTP) on the structure and composition of the near-surface layers was investigated. It was found that the RTP doesn't have a noticeable effect on the grain size and roughness of the film surface. On the other hand, additional reflections of the films with 0.5 ≤ Ga/(Ga + In) < 1 and Ag/(Ag + Cu) > 0.5, due to an ordered defect phase which is confined to the near-surface region of the film, are completely diminished after RTP with excess Se present. X-ray photoelectron spectroscopy results show that RTP with excess Se present altered the distribution of elements, rendering the film surface less group I deficient after that process. Consequently, atomic ratios were changed from the composition of I1III5VI8 compound to the composition close to that of I1III3VI5 ordered defect phase. Additionally, the RTP treatment, especially with excess Se, significantly enhanced solar cell efficiency performance due to an improvement in the open circuit voltage. - Highlights: ► Rapid Thermal Processing (RTP) of (Ag,Cu)(In,Ga)Se2 alloy films was investigated. ► It was found that RTP with excess Se supply improves solar cell properties. ► RTP with excess Se eliminated (Ag,Cu)(In,Ga)5Se8 phases. ► RTP with excess Se also reduced group I elements at the film surfaces

  7. Phase separation and electronic structure of ZnS{sub 0.3}O{sub 0.7} alloy thin film with and without (Ag, Li) co-doping

    Energy Technology Data Exchange (ETDEWEB)

    Dileep, K.; Datta, R., E-mail: ranjan@jncasr.ac.in

    2014-02-15

    Highlights: • ZnO1−xSx alloy thin films were grown by pulsed laser deposition with and without (Ag, Li) co-doping. • Films are phase separated and the phases were identified by electron diffraction. • Band structure characterization of phases by low loss EELS and ELNES. • Position of Ag, Li and S atoms determined by ELNES. -- Abstract: ZnS{sub 0.3}O{sub 0.7} alloy thin film with and without Ag and Li co-doping are grown by pulsed laser deposition on c-plane sapphire substrate. The films are phase separated in S-rich and S-poor regions. Two and four different phases are observed to form in (Ag, Li){sub 0.05}:Zn{sub 0.95}S{sub 0.3}O{sub 0.7} and ZnS{sub 0.3}O{sub 0.7} films respectively. Different phases and their relative volume fractions have been identified by electron diffraction pattern. The band gap corresponding to each phase is identified by low loss region of high resolution electron energy loss spectra. Band bowing parameter upon S doping is found to be 4.12 eV which closely match with Wien2k based density functional theory calculation utilizing mBJLDA exchange correlation potential. Oxygen positions have been replaced by sulphur in the lattice as confirmed by S L{sub 3,2} electron energy loss near edge absorption spectra. High resolution electron energy loss spectroscopy has been used to collect core level spectra of various dopants in order to identify their locations in the lattice. Experimental Ag M{sub 5,4} extended energy loss fine structure and Li K electron energy loss near edge structure in (Ag, Li):ZnS{sub 0.3}O{sub 0.7} alloy have been compared with calculated spectra using FEFF code, suggesting that Ag and Li have taken up both the substitution and interstitial positions in the lattice. All the samples are resistive with resistance in the range of a few mega-ohms.

  8. Physics of thin films

    Energy Technology Data Exchange (ETDEWEB)

    Francombe, M.H. (Dept. of Physics, Univ. of Pittsburgh, Pittsburgh, PA (US)); Vossen, J.L. (John Vossen Associates, Technical and Scientific Consulting, Bridgewater, NJ (US))

    1992-01-01

    This book of Physics of Thin Films emphasizes two main technical themes. The first is essentially an extension of the topical thrust on Thin Films for Advance Electronic Devices, developed in Volume 15 of this series. The second deals primarily with the physical and mechanical behavior of films and the influence of these in relation to various applications. The first of the four articles in this volume, by Neelkanth G. Dhere, discusses high-transition-temperature (T{sub c}) superconducting films. Since their discovery in 1986, both world-wide research activity and published literature on high-T{sub c} oxide films have exploded at a phenomenal rate. In his treatment, the author presents an effective survey of the already vast literature on this subject, discusses the numerous techniques under development for the growth of these perovskite-related complex oxides, and describes their key properties and applications. In particular, factors affecting the epitaxial structure, critical current capability, and microwave conductivity in Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O based film compositions are evaluated in relation to their use at 77K. An overview of potential applications in a variety of microwave devices, wide-band optical detectors, SQUID-type high-sensitivity magnetometers, etc., is included.

  9. Physics of thin films

    International Nuclear Information System (INIS)

    This book of Physics of Thin Films emphasizes two main technical themes. The first is essentially an extension of the topical thrust on Thin Films for Advance Electronic Devices, developed in Volume 15 of this series. The second deals primarily with the physical and mechanical behavior of films and the influence of these in relation to various applications. The first of the four articles in this volume, by Neelkanth G. Dhere, discusses high-transition-temperature (Tc) superconducting films. Since their discovery in 1986, both world-wide research activity and published literature on high-Tc oxide films have exploded at a phenomenal rate. In his treatment, the author presents an effective survey of the already vast literature on this subject, discusses the numerous techniques under development for the growth of these perovskite-related complex oxides, and describes their key properties and applications. In particular, factors affecting the epitaxial structure, critical current capability, and microwave conductivity in Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O based film compositions are evaluated in relation to their use at 77K. An overview of potential applications in a variety of microwave devices, wide-band optical detectors, SQUID-type high-sensitivity magnetometers, etc., is included

  10. Effect of BaZrO3/Ag hybrid doping to the microstructure and performance of fluorine-free MOD method derived YBa2Cu3O7−x superconducting thin films

    DEFF Research Database (Denmark)

    Tang, Xiao; Yue, Zhao; Wu, W.; Grivel, Jean-Claude

    2015-01-01

    It is known that BaZrO3 and Ag can improve the magnetic and transport performance of YBCO thin film through totally disparate ways. BaZrO3 plays the role of flux pinning centers and Ag improves the transparency of the YBCO grain boundaries. However, similar research is rare on the fluorine-free d...

  11. Synthesis and resistive switching behaviour of ZnMnO3 thin films with an Ag/ZnMnO3/ITO unsymmetrical structure

    Indian Academy of Sciences (India)

    Hua Wang; Shu-Ming Gao; Ji-Wen Xu; Chang-Lai Yuan; Xiao-Wen Zhang

    2015-02-01

    Single-phase MnZnO3 films were prepared on glass substrates coated with the use of indium tin oxide (ITO) as transparent bottom electrode via the sol–gel method. The effects of annealing temperature on structure, resistance switching behaviour and endurance characteristics of the ZnMnO3 films were investigated. The stable resistive switching behaviour with high resistance ratio in Ag/ZnMnO3/ITO unsymmetrical structure was observed. No second phase is detected, and the crystallinity of the MnZnO3 films is improved with the increase in annealing temperature from 350 to 400°C. The MnZnO3 films annealed at 350–450°C with an Ag/MnZnO3/ITO structure exhibit bipolar resistive switching behaviour. Ohmic and space-charge-limited conductions are the dominant mechanisms at low and high resistance states, respectively. $V{}_{\\text{ON}},\\ \\text{V_{OFF}}$ and $R_{\\text{HRS}}/R_{\\text{LRS}}$ of theMnZnO3 films increase with the increase in annealing temperature. Improved endurance characteristics are observed in the samples annealed at 350 and 400°C. The endurance of the MnZnO3 films degrades when annealed at >450°C.

  12. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  13. Quantum-well-induced ferromagnetism in thin films

    DEFF Research Database (Denmark)

    Niklasson, A.M.N.; Mirbt, S.; Skriver, Hans Lomholt;

    1997-01-01

    We have used a first-principles Green's-function technique to investigate the magnetic properties of thin films of Rh, Pd, and Pt deposited on a fee Ag (001) substrate. We find that the magnetic moment of the film is periodically suppressed and enhanced as a function of film thickness. The...

  14. Properties of MgB2 films deposited on single crystal Ag layers

    International Nuclear Information System (INIS)

    Highlights: • MgB2 thin film can be fabricated on single crystal Ag(1 1 1) face. • As the thickness of Ag layer increases, the Tc and Jc of MgB2 decreases. When the Ag layer is 20 nm thick, the reduction of Tc is about 2 K. • Single crystal Ag layer is better than polycrystalline Ag layer in MgB2 deposition. • May enable development of MgB2 SNS junctions with single crystal Ag in the future. - Abstract: We have recently developed a method to deposit MgB2 thin films on single crystal Ag layers, and found that thin Ag layers reduced the the superconductivity of MgB2 not much, which may be a possible material to fabricate MgB2 SNS Josephson junctions. The single crystal Ag layers were deposited on (0 0 0 1) SiC substrates, and then the MgB2 thin films were deposited on the Ag layers. All the measurements included the XRD, M–T and M–H curves. The transition temperature of MgB2 films decreases from 39 K to 37 K, while the thickness of Ag layers grows from 0 to 20 nm, and the critical current density at 4.2 K decreases from 1.76 MA/cm2 to 1.24 MA/cm2, too

  15. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  16. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  17. Improving Efficiency of Evaporated Cu2ZnSnS4 Thin Film Solar Cells by a Thin Ag Intermediate Layer between Absorber and Back Contact

    Directory of Open Access Journals (Sweden)

    Hongtao Cui

    2015-01-01

    Full Text Available A 20 nm Ag coating on Mo back contact was adopted to improve the back contact of evaporated Cu2ZnSnS4 (CZTS solar cells. The Ag layer helped reduce the thickness of MoS2 which improves fill factor (FF significantly; additionally, it reduced secondary phases ZnS and SnS2−x, which may help carrier transport; it was also involved in the doping of the absorber layer, which compensated the intrinsic p-type doping and therefore drags down the doping level. The doping involvement may enlarge the depletion region and improve lifetime of the absorber, which led to enhancing open circuit voltage (VOC, short circuit current density (JSC, and efficiency significantly. However, it degrades the crystallinity of the material slightly.

  18. Reflectance improvement by thermal annealing of sputtered Ag/ZnO back reflectors in a-Si:H thin film silicon solar cells

    DEFF Research Database (Denmark)

    Haug, Franz-Josef; Söderström, Karin; Pahud, Céline;

    2011-01-01

    Silver can be used as the back contact and reflector in thin film silicon solar cells. When deposited on textured substrates, silver films often exhibit reduced reflectance due to absorption losses by the excitation of surface plasmon resonances. We show that thermal annealing of the silver back ...... substrate: a cell with 9.9% initial efficiency and 15.82 mA/cm2 in short circuit current is realized in n-i-p configuration. © 2011 Materials Research Society....

  19. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  20. Thin film mechanics

    Science.gov (United States)

    Cooper, Ryan C.

    This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate

  1. Optically induced diffusion and dissolution of Ag into thin films of (GeS2)0.8x(Ga2S3)0.2

    Czech Academy of Sciences Publication Activity Database

    Válková, S.; Wágner, T.; Bartoš, J.; Přikryl, M.; Vlček, Milan; Frumarová, Božena; Beneš, L.; Frumar, M.

    Bucharest: National Institute R&D of Materials Physics, 77125-Bucharest, Magurele, P.O. Box Mg. 7, Bucharest, Romania, 2011. s. 38. [Fifth International Conference on Amorphous and Nanostructured Chalcogenides. 26.06.2011-01.07.2011, Magurele - Bucharest] Institutional research plan: CEZ:AV0Z40500505 Keywords : chalcogenides * thin films * optically induced Subject RIV: CA - Inorganic Chemistry

  2. Polycrystalline thin film photovoltaic technology

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  3. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  4. Nanostructured Ag4O4 films with enhanced antibacterial activity

    International Nuclear Information System (INIS)

    Ag4O4 (i.e. silver(I)-silver(III) oxide) thin films with tailored structure and morphology at the nanoscale have been grown by reactive pulsed laser deposition (PLD) in an oxygen-containing atmosphere and they are shown to exhibit a very strong antibacterial activity towards Gram-negative bacteria (E. coli) and to completely inhibit the growth of Gram-positive bacteria (S. aureus). The formation of this particular high-valence silver oxide is explained in terms of the reactions occurring during the expansion of the ablated species in the reactive atmosphere, leading to the formation of low-stability Ag-O dimers and atomic oxygen, providing reactive species at the substrate where the film grows. PLD is shown to allow control of the structure (i.e. crystallinity and grain size) and of the morphology of the films, from compact and columnar to foam-like, thus allowing the deposition of nanocrystalline films with increased porosity and surface area. The antibacterial action towards E. coli is demonstrated and is shown to be superior to that of nanostructured Ag-based medical products. This can be related to the release of Ag ions with high oxidation number, which are known to be very reactive towards bacteria, and to the peculiar morphology at the nanoscale resulting in a large effective surface area.

  5. Early stage fractal growth in thin films below the percolation limit

    Science.gov (United States)

    Batabyal, R.; Mahato, J. C.; Das, Debolina; Dev, B. N.

    2013-02-01

    We demonstrate the fractal growth of epitaxial Ag thin films on Si(111) surfaces using scanning tunneling microscopy (STM). The initial stage growth of Ag thin films provides islands of compact shape. These compact-shaped two-dimensional (2D) islands follow the Euclidian dimension 2. As the islands grow they become fractal in nature. The fractal (Hausdorff) dimension of the islands depends on the coverage of the Ag thin films. The mechanism responsible for this fractal nature of the Ag nanostructures varies from diffusion limited aggregation (DLA) to diffusion limited cluster aggregation (DLCA).

  6. Polyimide Aerogel Thin Films

    Science.gov (United States)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  7. Polycrystalline thin films

    Science.gov (United States)

    Zweibel, K.; Mitchell, R.; Ullal, H.

    1987-02-01

    This annual report for fiscal year 1986 summarizes the status, accomplishments, and projected future research directions of the Polycrystalline Thin Film Task in the Photovoltaic Program Branch of the Solar Energy Research Institute's Solar Electric Research Division. Subcontracted work in this area has concentrated on the development of CuInSe2 and CdTe technologies. During FY 1986, major progress was achieved by subcontractors in (1) achieving 10.5% (SERI-verified) efficiency with CdTe, (2) improving the efficiency of selenized CuInSe2 solar cells to nearly 8%, and (3) developing a transparent contact to CdTe cells for potential use in the top cells of tandem structures.

  8. Thin-film microextraction.

    Science.gov (United States)

    Bruheim, Inge; Liu, Xiaochuan; Pawliszyn, Janusz

    2003-02-15

    The properties of a thin sheet of poly(dimethylsiloxane) (PDMS) membrane as an extraction phase were examined and compared to solid-phase microextraction (SPME) PDMS-coated fiber for application to semivolatile analytes in direct and headspace modes. This new PDMS extraction approach showed much higher extraction rates because of the larger surface area to extraction-phase volume ratio of the thin film. Unlike the coated rod formats of SPME using thick coatings, the high extraction rate of the membrane SPME technique allows larger amounts of analytes to be extracted within a short period of time. Therefore, higher extraction efficiency and sensitivity can be achieved without sacrificing analysis time. In direct membrane SPME extraction, a linear relationship was found between the initial rate of extraction and the surface area of the extraction phase. However, for headspace extraction, the rates were somewhat lower because of the resistance to analyte transport at the sample matrix/headspace barrier. It was found that the effect of this barrier could be reduced by increasing either agitation, temperature, or surface area of the sample matrix/headspace interface. A method for the determination of PAHs in spiked lake water samples was developed based on the membrane PDMS extraction coupled with GC/MS. A linearity of 0.9960 and detection limits in the low-ppt level were found. The reproducibility was found to vary from 2.8% to 10.7%. PMID:12622398

  9. Thin functional conducting polymer films

    OpenAIRE

    Tian, S.

    2005-01-01

    In the present study, thin functional conducting polyaniline (PANI) films, either doped or undoped, patterned or unpatterned, were prepared by different approaches. The properties of the obtained PANI films were investigated in detail by a combination of electrochemistry with several other techniques, such as SPR, QCM, SPFS, diffraction, etc. The sensing applications (especially biosensing applications) of the prepared PANI films were explored. Firstly, the pure PANI films were prepar...

  10. Interfaces and thin films physics

    International Nuclear Information System (INIS)

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described

  11. Microstructure and tribological properties of NbN-Ag composite films by reactive magnetron sputtering

    Science.gov (United States)

    Ju, Hongbo; Xu, Junhua

    2015-11-01

    Recently, the chameleon thin films were developed with the purpose of adjusting their chemistry at self-mating interfaces in response to environmental changes at a wide temperature range. However, very few studies have focused on what state the lubricious noble metal exists in the films and the tribological properties at room temperature (RT). Composite NbN-Ag films with various Ag content (Ag/(Nb + Ag)) were deposited using reactive magnetron sputtering to investigate the crystal structure, mechanical and tribological properties. A combination of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) analyses showed that face-centered cubic (fcc) NbN, hexagonal close-packed (hcp) NbN and fcc silver coexisted in NbN-Ag films. The incorporation of soft Ag into NbN matrix led to the hardness decrease from 29.6 GPa at 0 at.% Ag to 11.3 GPa at 19.9 at.% Ag. Tribological properties of NbN-Ag films performed using dry pin-on-disc wear tests against Al2O3 depended on Ag content to a large extent. The average friction coefficient and wear rate of NbN-Ag films decreased as Ag content increased from 4.0 to 9.2 at.%. With a further increase of Ag content, the average friction coefficient further decreased, while the wear rate increased gradually. The optimal Ag content was found to be 9.2-13.5 at.%, which showed low average friction coefficient values of 0.46-0.40 and wear rate values of 1.1 × 10-8 to 1.7 × 10-8 mm3/(mm N). 3D Profiler and Raman spectroscopy measurements revealed that the lubricant tribo-film AgNbO3 detected on the surface of the wear tracks could lead to the friction coefficient curve stay constant and decrease the average friction coefficients. The decrease of wear rate was mainly attributed to the lubricant tribo-film AgNbO3 as Ag content increased from 4.0 to 9.2 at.%; with a further increase in Ag content, the wear rate increased with increasing Ag content in NbN-Ag films because a

  12. Thin Film Encapsulation of Light-Emitting Diodes with Photopolymerized Polyacrylate and Silver Films

    Institute of Scientific and Technical Information of China (English)

    WANG Li-Duo; WU Zhao-Xin; LI Yang; QIU Yong

    2005-01-01

    @@ A thin film encapsulation of organic light-emitting diodes (OLEDs) is investigated with a multi-layer stack of polyacrylate-Ag-polyacrylate-Ag-polyacrylate-Ag-polyacrylate (PAPAPAP). It is shown that the fabrication of polyacrylate films by a wet process does not affect the electroluminescent (EL) characteristics of the devices and polyacrylate films together with the silver layers can perform to minimize oxygen and water diffusion into the organic light-emitting device. The structure of polyacrylate(20 μm)-Ag(200nm)-polyacrylate(20 μm)-Ag(200nm)-polyacrylate(20μm)-Ag(200nm)-polyacrylate(20μm) is demonstrated to enhance dramatically the lifetime of OLEDs.

  13. Surface plasmon resonance in nanostructured Ag incorporated ZnS films

    Energy Technology Data Exchange (ETDEWEB)

    Chalana, S. R.; Mahadevan Pillai, V. P., E-mail: vpmpillai9@gmail.com [Department of Optoelectronics, University of Kerala, Kariavattom, Thiruvananthapuram– 695581, Kerala (India); Ganesan, V. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore- 452017, Madhyapradesh (India)

    2015-10-15

    Silver incorporated zinc sulfide thin films are prepared by RF magnetron sputtering technique and the influence of silver incorporation on the structural, optical and luminescence properties is analyzed using techniques like grazing incidence X-Ray diffraction (GIXRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), micro-Raman spectroscopy, UV-Vis spectroscopy and laser photoluminescence spectroscopy. XRD analysis presents hexagonal wurtzite structure for the films. A reduction of crystallinity of the films is observed due to Ag incorporation. The Raman spectral analysis confirms the reduction of crystallinity and increase of strain due to the Ag incorporation. AFM analysis reveals a rough surface morphology for the undoped film and Ag incorporation makes the films uniform, dense and smooth. A blue shift of band gap energy with increase in Ag incorporation is observed due to quantum confinement effect. An absorption band (450-650 nm region) due to surface plasmon resonance of the Ag clusters present in the ZnS matrix is observed for the samples with higher Ag incorporation. The complex dielectric constant, loss factor and distribution of volume and surface energy loss of the ZnS thin films are calculated. Laser photoluminescence measurements gives an intense bluish green emission from the ZnS films and a quenching of the PL emission is observed which can be due to the metal plasmonic absorption and non-radiative energy transfer due to Ag incorporation.

  14. Surface plasmon resonance in nanostructured Ag incorporated ZnS films

    Directory of Open Access Journals (Sweden)

    S. R. Chalana

    2015-10-01

    Full Text Available Silver incorporated zinc sulfide thin films are prepared by RF magnetron sputtering technique and the influence of silver incorporation on the structural, optical and luminescence properties is analyzed using techniques like grazing incidence X-Ray diffraction (GIXRD, atomic force microscopy (AFM, field emission scanning electron microscopy (FESEM, energy dispersive X-ray spectroscopy (EDS, micro-Raman spectroscopy, UV-Vis spectroscopy and laser photoluminescence spectroscopy. XRD analysis presents hexagonal wurtzite structure for the films. A reduction of crystallinity of the films is observed due to Ag incorporation. The Raman spectral analysis confirms the reduction of crystallinity and increase of strain due to the Ag incorporation. AFM analysis reveals a rough surface morphology for the undoped film and Ag incorporation makes the films uniform, dense and smooth. A blue shift of band gap energy with increase in Ag incorporation is observed due to quantum confinement effect. An absorption band (450-650 nm region due to surface plasmon resonance of the Ag clusters present in the ZnS matrix is observed for the samples with higher Ag incorporation. The complex dielectric constant, loss factor and distribution of volume and surface energy loss of the ZnS thin films are calculated. Laser photoluminescence measurements gives an intense bluish green emission from the ZnS films and a quenching of the PL emission is observed which can be due to the metal plasmonic absorption and non-radiative energy transfer due to Ag incorporation.

  15. Surface plasmon resonance in nanostructured Ag incorporated ZnS films

    International Nuclear Information System (INIS)

    Silver incorporated zinc sulfide thin films are prepared by RF magnetron sputtering technique and the influence of silver incorporation on the structural, optical and luminescence properties is analyzed using techniques like grazing incidence X-Ray diffraction (GIXRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), micro-Raman spectroscopy, UV-Vis spectroscopy and laser photoluminescence spectroscopy. XRD analysis presents hexagonal wurtzite structure for the films. A reduction of crystallinity of the films is observed due to Ag incorporation. The Raman spectral analysis confirms the reduction of crystallinity and increase of strain due to the Ag incorporation. AFM analysis reveals a rough surface morphology for the undoped film and Ag incorporation makes the films uniform, dense and smooth. A blue shift of band gap energy with increase in Ag incorporation is observed due to quantum confinement effect. An absorption band (450-650 nm region) due to surface plasmon resonance of the Ag clusters present in the ZnS matrix is observed for the samples with higher Ag incorporation. The complex dielectric constant, loss factor and distribution of volume and surface energy loss of the ZnS thin films are calculated. Laser photoluminescence measurements gives an intense bluish green emission from the ZnS films and a quenching of the PL emission is observed which can be due to the metal plasmonic absorption and non-radiative energy transfer due to Ag incorporation

  16. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  17. Pulsed Laser Deposition and Reflection High-Energy Electron Diffraction studies of epitaxial long range order, nano- and microstructured Ag thin films grown on MgO, Al2 O3 , STO and Si

    Science.gov (United States)

    Velazquez, Daniel; Seibert, Rachel; Man, Hamdi; Spentzouris, Linda; Terry, Jeff

    2015-03-01

    Pulsed Laser Deposition is a state-of-the-art technique that allows for the fine tunability of the deposition rate, highly uniform and epitaxial sample growth, the ability to introduce partial pressures of gases into the experimental chamber for growth of complex materials without interfering with the energy source (laser). An auxiliary in situ technique for growth monitoring, Reflection High-Energy Electron Diffraction, is a powerful characterization tool for predictability of the surface physical structure both, qualitatively and quantitatively. RHEED patterns during and post deposition of Ag thin films on MgO, Al2O3, Si and STO substrtates are presented and their interpretations are compared with surface imaging techniques (SEM, STM) to evidence the usefulness of the technique.

  18. Thin-Film Power Transformers

    Science.gov (United States)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  19. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  20. Thermal durability of AZO/Ag(Al)/AZO transparent conductive films

    Science.gov (United States)

    Sugimoto, Yukiko; Igarashi, Kanae; Shirasaki, Shinya; Kikuchi, Akihiko

    2016-04-01

    Effects of Al doping on surface morphology, sheet resistance, optical transmission spectra, and thermal durability of a thin Ag layer and AZO/Ag/AZO dielectric/metal/dielectric (DMD) transparent conductive films (TCFs) were investigated. The 1.7 at. % Al doping suppressed the initial island growth of a thin Ag layer and the plasmon resonant absorption dip in the optical transmission spectra. The threshold thickness of percolation conductivity was reduced from 9-10 (pure Al layer) to 5-6 nm (1.7 at. % Al-doped Ag layer). Al doping in the Ag layer improved the thermal durability of AZO/Ag/AZO-DMD TCFs. The threshold temperature for Ag void formation increased from 400 °C (DMD with pure Ag layer) to 600 °C (DMD with a 10.5 at. % Al-doped Ag layer). The optimum annealing temperature increased from 300 °C (DMD with a pure Ag layer) to 500 °C (DMD with a 10.5 at. % Al-doped Ag layer). Maximum figures of merit (FOM) were 0.5 × 10-2 and 1.1 × 10-2 Ω-1 for the DMD with a pure Ag layer and that with a 10.5 at. % Al-doped Ag layer, respectively.

  1. Nanotemplated lead telluride thin films

    OpenAIRE

    Li, Xiaohong; Nandhakumar, Iris S.; Attard, George S.; Markham, Matthew L.; Smith, David C.; Baumberg, Jeremy J.

    2009-01-01

    Direct lyotropic liquid crystalline templating has been successfully applied to produce nanostructured IV–VI semiconductor PbTe thin films by electrodeposition both on gold and n-type (100) silicon substrates. The PbTe films were characterized by transmission electron microscopy, X-ray diffraction and polarized optical microscopy and the results show that the films have a regular hexagonal nanoarchitecture with a high crystalline rock salt structure and exhibit strong birefringenc...

  2. Thin films and froth flotation

    International Nuclear Information System (INIS)

    The properties of thin, aqueous films on solid surfaces and their central role in the froth flotation process are discussed. The stability of these films can generally be described in terms of electrostatic and van der Waals forces. Significant experimental and theoretical advances are required in many areas (e.g. short range forces, film drainage) before a clear picture of the collision of, adhesion between and detachment of bubbles and particles will emerge. (orig.)

  3. Thin-film ternary superconductors

    International Nuclear Information System (INIS)

    Physical properties and preparation methods of thin film ternary superconductors, (mainly molybdenum chalcogenides) are reviewed. Properties discussed include the superconducting critical fields and critical currents, resistivity and the Hall effect. Experimental results at low temperatures, together with electron microscopy data are used to determine magnetic flux pinning mechanisms in films. Flux pinning results, together with an empirical model for pinning, are used to get estimates for possible applications of thin film ternary superconductors where high current densities are needed in the presence of high magnetic fields. The normal state experimental data is used to derive several Fermi surface parameters, e.g. the Fermi velocity and the effective Fermi surface area. (orig.)

  4. Calorimetry of epitaxial thin films.

    Science.gov (United States)

    Cooke, David W; Hellman, F; Groves, J R; Clemens, B M; Moyerman, S; Fullerton, E E

    2011-02-01

    Thin film growth allows for the manipulation of material on the nanoscale, making possible the creation of metastable phases not seen in the bulk. Heat capacity provides a direct way of measuring thermodynamic properties of these new materials, but traditional bulk calorimetric techniques are inappropriate for such a small amount of material. Microcalorimetry and nanocalorimetry techniques exist for the measurements of thin films but rely on an amorphous membrane platform, limiting the types of films which can be measured. In the current work, ion-beam-assisted deposition is used to provide a biaxially oriented MgO template on a suspended membrane microcalorimeter in order to measure the specific heat of epitaxial thin films. Synchrotron x-ray diffraction showed the biaxial order of the MgO template. X-ray diffraction was also used to prove the high quality of epitaxy of a film grown onto this MgO template. The contribution of the MgO layer to the total heat capacity was measured to be just 6.5% of the total addenda contribution. The heat capacity of a Fe(.49)Rh(.51) film grown epitaxially onto the device was measured, comparing favorably to literature data on bulk crystals. This shows the viability of the MgO∕SiN(x)-membrane-based microcalorimeter as a way of measuring the thermodynamic properties of epitaxial thin films. PMID:21361612

  5. Biaxially textured Ag films by grazing ion beam assisted deposition

    International Nuclear Information System (INIS)

    The effect of grazing incidence 4 keV Ar+ ion irradiation on the early stage of Ag thin film growth on amorphous Si was investigated. The double effect of axial and surface channeling resulted in grains oriented along the axis in-plane, while the (111) out-of-plane texture was maintained. A slight average tilt of the (111) out-of-plane texture axis towards the ion beam direction is proposed to result from the difference between terrace and step edge sputtering yield. The observed tilt is consistent with a minimum erosion orientation of the surface profile.

  6. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  7. Microstructure and optical properties of nano Ag-ITO films

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Nano Ag-ITO films with Ag volume fraction of 0.3%-1.0% were prepared by radio-frequency magnetron co-sputtering and analyzed by X-ray diffraction,scanning electron microscopy and ultraviolet-visible spectroscopy.Microstructure analysis shows that the films are composed of polycrystalline ITO matrix embedded with Ag nanoparticles with a mean size of 60-100 nm.Transmissivity spectra of Ag-ITO films indicate that the visible light transmissivity of the films decreases with increasing the Ag fraction.The transmissivity of the annealed films is higher than that of the as-deposited films.The volume 0.3% Ag-ITO films have the highest light reflectance.The annealed films exhibit lower light absorptance than as-deposited films.A surface plasmon resonance(SPR) peak of volume 0.3% Ag-ITO films is located around 510 nm.Compared with the annealed ITO film,the annealed volume 0.3% Ag-ITO film shows 10% higher reflectivity,while its transmittance is almost the same as that of the annealed ITO film,indicating its potential application in new-type transflective displays.

  8. Fabrication of amorphous Zr{sub 48}Cu{sub 36}Al{sub 8}Ag{sub 8} thin films by ion beam sputtering and their corrosion behavior in SBF for bio implants

    Energy Technology Data Exchange (ETDEWEB)

    Subramanian, B., E-mail: bsmanian@ceceri.res.in [CSIR – Central Electrochemical Research Institute, Karaikudi 630 006 (India); Yugeswaran, S.; Kobayashi, Akira [Joining and Welding Research Institute, Osaka University, Osaka 567-0047 (Japan); Jayachandran, M. [CSIR – Central Electrochemical Research Institute, Karaikudi 630 006 (India)

    2013-09-25

    Highlights: •The deposited alloys were shown to have amorphous structure. •Coated specimen had higher corrosion resistance in SBF. •Coatings were non-cytotoxic in nature. -- Abstract: The growth of multi component amorphous Zr{sub 48}Cu{sub 36}Al{sub 8}Ag{sub 8} thin film metallic glasses (TFMGs) using single target ion beam sputtering has been systematically investigated. The as prepared sputtering target was crystalline in nature. The presence of the constituent elements was identified from EPMA and AES analysis. An atomically disordered structure was observed by micro X-ray diffraction, electron diffraction and high resolution transmission electron microscopy. Glassy films with atomically smooth surfaces of the order of 0.4 nm with higher nanohardness of 9.33 GPa and Young’s modulus of 117 GPa compared to their crystalline substrate was observed from nanoindentation analysis. The study of in vitro corrosion of these coatings on implantable 316L stainless steel substrate in simulated body fluid (SBF) indicated that the as sputtered specimen had higher corrosion resistance without any localized pitting.

  9. Semiconductor-nanocrystal/conjugated polymer thin films

    Science.gov (United States)

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  10. Preparation of thin vyns films

    International Nuclear Information System (INIS)

    The fabrication of thin films of VYNS resin (copolymer of chloride and vinyl acetate) of superficial density from 3 to 50 μg/cm2 with solutions in cyclohexanone is presented. Study and discussion of some properties compared with formvar film (polyvinyl formals). It appears that both can be used as source supports but formvar films are prepared more easily and more quickly, in addition they withstand higher temperatures. The main quality of VYNS is that they can be easily separated even several days after their preparation

  11. Shielding superconductors with thin films

    CERN Document Server

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  12. Thin Film Solid Lubricant Development

    Science.gov (United States)

    Benoy, Patricia A.

    1997-01-01

    Tribological coatings for high temperature sliding applications are addressed. A sputter-deposited bilayer coating of gold and chromium is investigated as a potential solid lubricant for protection of alumina substrates during sliding at high temperature. Evaluation of the tribological properties of alumina pins sliding against thin sputtered gold films on alumina substrates is presented.

  13. Thin film polymeric gel electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Derzon, Dora K. (1554 Rosalba St. NE., Albuquerque, Bernalillo County, NM 87112); Arnold, Jr., Charles (3436 Tahoe, NE., Albuquerque, Bernalillo County, NM 87111); Delnick, Frank M. (9700 Fleming Rd., Dexter, MI 48130)

    1996-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  14. Optical thin films test methodology

    International Nuclear Information System (INIS)

    An over view of different test procedures for thin film optical coatings have been discussed in this paper. These procedures cover optical coatings for high precision and commercial applications. These tests include visual inspection test, self adhesion test, moderate abrasion test, etc. Two groups of testing sequences have been given depending upon the environmental conditions. (author)

  15. Low temperature deposition of silver sulfide thin films by AACVD for gas sensor application

    International Nuclear Information System (INIS)

    Highlights: ► Silver sulfide thin films were deposited by aerosol assisted chemical vapor deposition from a single source precursor [Ag(S2CN (C2H5)2)3]2 (1). ► The precursor (1), prepared in high yield by simple reported chemical procedure, was characterized and undergoes facile decomposition at 400 °C. ► The deposited thin films were characterized by SEM, EDX and XRD which suggests the formation of impurity-free mesoporous Ag2S, with well defined particles evenly distributed in the range of 0.3–0.5 μm. ► The optical bandgap energy of the thin film was estimated, and it is about 1.33 eV. ► The thin films were investigated for the gas sensor applications. - Abstract: Crack free Ag2S thin films were deposited on glass substrates by aerosol assisted chemical vapor deposition (AACVD) using [Ag(S2CN (C2H5)2)3]2 (1) as a precursor. Thin films were deposited from solution of methanol at 400 °C and characterized by X-ray diffraction (XRD), UV–vis spectroscopy, scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) analysis. SEM image of thin film showed well-defined and porous surface morphology with an average particle size of 0.3–0.5 μm. Optical band gaps energy of 1.33 eV was estimated for Ag2S thin film, by extrapolating the linear part of the Tauc plot recorded at room temperature. The gas sensing characteristics of the novel gas sensors based on Ag2S were investigated for the detection carbon monoxide. The effect of operating temperature and change in gas concentration on the performance of carbon monoxide were investigated. The sensing mechanism of sensor was discussed.

  16. Antimicrobial activity of thin solid films of silver doped hydroxyapatite prepared by sol-gel method.

    Science.gov (United States)

    Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

    2014-01-01

    In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x(Ag) = 0.5 are effective against E. coli and S. aureus after 24 h. PMID:24523630

  17. Superfast Thinning of a Nanoscale Thin Liquid Film

    OpenAIRE

    Winkler, Michael; Kofod, Guggi; Krastev, Rumen; Abel, Markus

    2011-01-01

    This fluid dynamics video demonstrates an experiment on superfast thinning of a freestanding thin aqueous film. The production of such films is of fundamental interest for interfacial sciences and the applications in nanoscience. The stable phase of the film is of the order $5-50\\,nm$; nevertheless thermal convection can be established which changes qualitatively the thinning behavior from linear to exponentially fast. The film is thermally driven on one spot by a very cold needle, establishi...

  18. Phase Coarsening in Thin Films

    Science.gov (United States)

    Wang, K. G.; Glicksman, M. E.

    2015-08-01

    Phase coarsening (Ostwald ripening) phenomena are ubiquitous in materials growth processes such as thin film formation. The classical theory explaining late-stage phase coarsening phenomena was developed by Lifshitz and Slyozov, and by Wagner in the 1960s. Their theory is valid only for a vanishing volume fraction of the second phase in three dimensions. However, phase coarsening in two-dimensional systems is qualitatively different from that in three dimensions. In this paper, the many-body concept of screening length is reviewed, from which we derive the growth law for a `screened' phase island, and develop diffusion screening theory for phase coarsening in thin films. The coarsening rate constant, maximum size of phase islands in films, and their size distribution function will be derived from diffusion screening theory. A critical comparison will be provided of prior coarsening concepts and improvements derived from screening approaches.

  19. SEM/EDX and XRD characterization of silver nanocrystalline thin film prepared from organometallic solution precursor

    Directory of Open Access Journals (Sweden)

    Dimitrijević R.

    2013-01-01

    Full Text Available The Ag nano-structured thin films prepared on flat glass substrates have been studied. The ball-like silver nanoparticles have been synthesized in large quantity by using a modified method of hydrolytic decomposition of silver complexes with amino types ligands formed in ethanol aqueous solution. SEM analysis revealed that Ag nanoparticles are all sphere shaped with bimodal size (40 and 70 nm distribution. The results of XRD powder pattern examination show that Ag nanoparticles are pure phase, well crystallized. The unit cell dimensions measured on synthesized Ag nano films show small but frequent contraction in comparison to Ag metal standard.

  20. PLD-grown thin film saturable absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Tellkamp, Friedjof

    2012-11-01

    The subject of this thesis is the preparation and characterization of thin films made of oxidic dielectrics which may find their application as saturable absorber in passively Q-switched lasers. The solely process applied for fabrication of the thin films was the pulsed laser deposition (PLD) which stands out against other processes by its flexibility considering the composition of the systems to be investigated. Within the scope of this thesis the applied saturable absorbers can be divided into two fundamentally different kinds of functional principles: On the one hand, saturable absorption can be achieved by ions embedded in a host medium. Most commonly applied bulk crystals are certain garnets like YAG (Y{sub 3}Al{sub 5}O{sub 12}) or the spinel forsterite (Mg{sub 2}SiO{sub 4}), in each case with chromium as dopant. Either of these media was investigated in terms of their behavior as PLD-grown saturable absorber. Moreover, experiments with Mg{sub 2}GeO{sub 4}, Ca{sub 2}GeO{sub 4}, Sc{sub 2}O{sub 3}, and further garnets like YSAG or GSGG took place. The absorption coefficients of the grown films of Cr{sup 4+}:YAG were determined by spectroscopic investigations to be one to two orders of magnitude higher compared to commercially available saturable absorbers. For the first time, passive Q-switching of a Nd:YAG laser at 1064 nm with Cr{sup 4+}:YAG thin films could be realized as well as with Cr:Sc{sub 2}O{sub 3} thin films. On the other hand, the desirable effect of saturable absorption can also be generated by quantum well structures. For this purpose, several layer system like YAG/LuAG, Cu{sub 2}O/MgO, and ZnO/corumdum were investigated. It turned out that layer systems with indium oxide (In{sub 2}O{sub 3}) did not only grew in an excellent way but also showed up a behavior regarding their photo luminescence which cannot be explained by classical considerations. The observed luminescence at roughly 3 eV (410 nm) was assumed to be of excitonic nature and its

  1. Thin films stress modeling : a novel approach

    OpenAIRE

    Bhattacharyya, A. S.; Ramgiri, Praveen Kumar

    2015-01-01

    A novel approach to estimate the thin film stress was discussed based on surface tension. The effect of temperature and film thickness was studies. The effect of stress on the film mechanical properties was observed.

  2. Effects of {gamma}-irradiation on the optical properties of a-Ag{sub 7.5} (Sb{sub 0.3}Ge{sub 0.1}Se{sub 0.6}){sub 92.5} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Salem, A.M.; Marzouk, S.Y. [National Research Center, Electron Microscope and Thin Film Department, Dokki, Cairo (Egypt); Moustafa, S.H. [Helwan University, Faculty of Science, Cairo (Egypt)

    2007-03-15

    The amorphous behaviour of Ag{sub 7.5}(Sb{sub 0.3}Ge{sub 0.1}Se{sub 0.6}){sub 92.5} chalcogenide thin film deposited at room temperature on glass substrates by thermal evaporation process at vacuum pressure {proportional_to}10{sup -3} Pa was examined using X-ray and electron diffraction techniques. The elemental chemical composition of thin film deposited on carbon stub was investigated via energy dispersive spectroscopy. The optical transmission and reflection spectra of as-deposited films and those exposed to different {gamma}-doses were recorded at room temperature within the wavelength range 600-2500 nm. The dispersion of the refractive index for such films can be described in terms of the single-oscillator Wemple-DiDomenico model. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Anisotropic conductivity of silver thin films grown on silicon (100) vicinal surfaces

    OpenAIRE

    López-Ríos, T.; Briggs, A.; Guillet, S.; Baró, A.M.; Luna, Mónica

    1995-01-01

    The electrical conductivity between 4 and 300 K of Ag thin films (up to 30 mm grown at room temperature on Si(100) vicinal surfaces has been measured and their morphology imaged with an atomic force microscope. A noticeable anisotropy of the resistivity of the films which is related to the structure of the films has been found)

  4. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States)

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  5. Epitaxial Cu(001) films grown on a Cr/Ag/Fe/GaAs(001) buffer system

    International Nuclear Information System (INIS)

    We present a procedure to prepare single-crystalline, high-purity Cu(001) films (templates) suitable as substrates for subsequent epitaxial thin-film growth. The template films were grown in a dedicated molecular-beam epitaxy system on a Cr/Ag/Fe/GaAs(001) buffer layer system. Low-energy electron diffraction and X-ray diffraction were applied to determine the surface orientation and the epitaxial relationship between all layers of the stack. Post-annealing at moderate temperatures enhances the quality of the film as shown by low-energy electron diffraction and atomic force microscopy. X-ray photoemission and Auger electron spectroscopy confirm that no atoms of the buffer layers diffuse into the Cu film during the initial preparation and the post-annealing treatment. The completed Cu(001) template system can be exposed to air and afterwards refurbished by Ar+-ion bombardment and annealing, enabling the transfer between vacuum systems. The procedure provides suitable conductive thin film templates for studies of epitaxial thin films, e.g. on the magnetic and magnetotransport properties of Co and Ni based films and multilayers. - Highlights: • Preparation of epitaxial Cu(001) template films on an insulating substrate • Characterization of template structure, orientation, cleanness, and roughness • Template films can be exposed to air and refurbished in different vacuum system. • Template films are suitable for further thin film growth at up to 570 K

  6. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  7. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  8. Modification of polyamide-CdS-CdSe composite material films with Ag using a cation–cation exchange reaction

    International Nuclear Information System (INIS)

    Highlights: • We investigated deposition of a mixed CdSe-CdS-Ag2Se-Ag2S on polyamide. • A single chalcogen precursor – K2SeS2O6 – was used. • AAS showed five- to ten-fold excess of chalcogens diffused into PA. • Addition of AgNO3 resulted in subsurface Ag2Se–Ag2S formation. - Abstract: Thin mixed CdSe-CdS-Ag2Se-Ag2S films were deposited on a polyamide 6 (PA) surface by successfully using a cation-exchange reaction between Cd2+ and Ag+ to convert CdSe-CdS into Ag2Se-Ag2S. These were deposited using a K2SeS2O6 precursor solution at 60 °C followed by cadmium acetate (Cd(CH3COO)2). An aqueous AgNO3 solution was used as the Ag source. XRD patterns showed a complex PA-Cd-S-Se-Ag film crystalline composition with CdS, CdSe, Ag2S and Ag2Se peaks. Calculated dislocation density ranged within 5–15 × 1013 lines·m−2 indicating high quality atomic layers. Atomic Absorption Spectroscopy (AAS) showed five- to ten-fold excess of chalcogens to metals in the thin films formed. No chalcogenides were observed on the sample surface during XPS analysis after Ag exchange due to the desorption of CdS and CdSe layers, not diffused into the bulk of the polymer suggesting that silver chalcogenides were located subsurface, as opposed to the outermost layer, likely comprised of Ag2O

  9. Modification of polyamide-CdS-CdSe composite material films with Ag using a cation–cation exchange reaction

    Energy Technology Data Exchange (ETDEWEB)

    Krylova, V.; Žalenkienė, S.; Dukstienė, N. [Department of Physical and Inorganic Chemistry, Kaunas University of Technology, Radvilenu st. 19, LT-50254, Kaunas (Lithuania); Baltrusaitis, J., E-mail: job314@lehigh.edu [Department of Chemical and Biomolecular Engineering, Lehigh University, B336 Iacocca Hall, 111 Research Drive, Bethlehem, PA 18015 (United States)

    2015-10-01

    Highlights: • We investigated deposition of a mixed CdSe-CdS-Ag{sub 2}Se-Ag{sub 2}S on polyamide. • A single chalcogen precursor – K{sub 2}SeS{sub 2}O{sub 6} – was used. • AAS showed five- to ten-fold excess of chalcogens diffused into PA. • Addition of AgNO{sub 3} resulted in subsurface Ag{sub 2}Se–Ag{sub 2}S formation. - Abstract: Thin mixed CdSe-CdS-Ag{sub 2}Se-Ag{sub 2}S films were deposited on a polyamide 6 (PA) surface by successfully using a cation-exchange reaction between Cd{sup 2+} and Ag{sup +} to convert CdSe-CdS into Ag{sub 2}Se-Ag{sub 2}S. These were deposited using a K{sub 2}SeS{sub 2}O{sub 6} precursor solution at 60 °C followed by cadmium acetate (Cd(CH{sub 3}COO){sub 2}). An aqueous AgNO{sub 3} solution was used as the Ag source. XRD patterns showed a complex PA-Cd-S-Se-Ag film crystalline composition with CdS, CdSe, Ag{sub 2}S and Ag{sub 2}Se peaks. Calculated dislocation density ranged within 5–15 × 10{sup 13} lines·m{sup −2} indicating high quality atomic layers. Atomic Absorption Spectroscopy (AAS) showed five- to ten-fold excess of chalcogens to metals in the thin films formed. No chalcogenides were observed on the sample surface during XPS analysis after Ag exchange due to the desorption of CdS and CdSe layers, not diffused into the bulk of the polymer suggesting that silver chalcogenides were located subsurface, as opposed to the outermost layer, likely comprised of Ag{sub 2}O.

  10. Organic thin-film photovoltaics

    OpenAIRE

    Liu, Miaoyin

    2010-01-01

    Zusammenfassung Zur Verbesserung der Leistungsumwandlung in organischen Solarzellen sind neue Materialien von zentraler Bedeutung, die sämtliche Erfordernisse für organische Photovoltaik-Elemente erfüllen. In der vorliegenden Arbeit „Organic thin-film photovoltaics“ wurden im Hinblick auf ein besseres Verständnis der Zusammenhänge zwischen molekularer Struktur und der Leistungsfähigkeit neue Materialien in „bulk-heterojunction“ Solarzellen und in Festphasen-Farbstoffsensibilisierten ...

  11. Photoconductivity of thin organic films

    International Nuclear Information System (INIS)

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C60), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 103 Ω m and 3 x 104 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 108 Ω m in dark to 3.1 x 106 Ω m under the light.

  12. Particle growth mechanisms in Ag-ZrO2 and Au-ZrO2 granular films obtained by pulsed laser deposition

    International Nuclear Information System (INIS)

    Thin films consisting of Ag and Au nanoparticles embedded in amorphous ZrO2 matrix were grown by pulsed laser deposition in a wide range of metal volume concentrations in the dielectric regime (0.08AgAuc(Ag)∼0.28 and xc(Au)∼0.52)

  13. Raman scattering enhanced within the plasmonic gap between an isolated Ag triangular nanoplate and Ag film.

    Science.gov (United States)

    Li, Kuanguo; Jiang, Kang; Zhang, Lan; Wang, Yong; Mao, Lei; Zeng, Jie; Lu, Yonghua; Wang, Pei

    2016-04-22

    Enhanced electromagnetic field in the tiny gaps between metallic nanostructures holds great promise in optical applications. Herein, we report novel out-of-plane nanogaps composed of micrometer-sized Ag triangular nanoplates (AgTN) on Ag films. Notably, the new coupled plasmonic structure can dramatically enhance the surface-enhanced Raman scattering (SERS) by visible laser excitation, although the micrometer-sized AgTN has localized plasmon resonance at infrared wavelength. This enhancement is derived from the gap plasmon polariton between the AgTN and Ag film, which is excited via the antenna effect of the corner and edge of the AgTN. Systematic SERS studies indicated that the plasmon enhancement was on the order of corner > edge > face. These results were further verified by theoretical simulations. Our device paves the way for rational design of sensitive SERS substrates by judiciously choosing appropriate nanoparticles and optimizing the gap distance. PMID:26939539

  14. Sputtering of CaF2 Thin Films

    International Nuclear Information System (INIS)

    In the present work CaF2 thin films of different thicknesses deposited on Si substrate have been irradiated with 120 MeV Ag ions with equilibrium charge state and electronic sputtering yield as well as emission of smaller particles/nanoclusters has been studied through Elastic Recoil Detection Analysis (ERDA) and Transmission Electron Microscopy (TEM) respectively. The observed results show maximum sputtering yield at smallest thickness and also nanostructure formation for that thickness has been observed through TEM.

  15. Zinc oxide thin film acoustic sensor

    Energy Technology Data Exchange (ETDEWEB)

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah [Department of Physics , College of Science, Al-Mustansiriyah University, Baghdad (Iraq); Mansour, Hazim Louis [Department of Physics , College of Education, Al-Mustansiriyah University, Baghdad (Iraq)

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  16. Flexible Tactile Sensor Using Polyurethane Thin Film

    OpenAIRE

    Seiji Aoyagi; Tomokazu Takahashi; Masato Suzuki

    2012-01-01

    A novel capacitive tactile sensor using a polyurethane thin film is proposed in this paper. In previous studies, capacitive tactile sensors generally had an air gap between two electrodes in order to enhance the sensitivity. In this study, there is only polyurethane thin film and no air gap between the electrodes. The sensitivity of this sensor is higher than the previous capacitive tactile sensors because the polyurethane is a fairly flexible elastomer and the film is very thin (about 1 µm)....

  17. Silicon Thin-Film Solar Cells

    OpenAIRE

    2007-01-01

    We review the field of thin-film silicon solar cells with an active layer thickness of a few micrometers. These technologies can potentially lead to low cost through lower material costs than conventional modules, but do not suffer from some critical drawbacks of other thin-film technologies, such as limited supply of basic materials or toxicity of the components. Amorphous Si technology is the oldest and best established thin-film silicon technology. Amorphous silicon is deposited at low t...

  18. Efficient electrochromic nickel oxide thin films by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Sonavane, A.C. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur - 416 004, Maharashtra (India); Inamdar, A.I. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur - 416 004, Maharashtra (India); Department of Semiconductor Science, Dongguk University, Seoul - 100-715 (Korea, Republic of); Shinde, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur - 416 004, Maharashtra (India); Deshmukh, H.P. [Department of Physics, Y. M. College, Bharati Vidyapeeth, Erandwane, Pune (India); Patil, R.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur - 416 004, Maharashtra (India); Patil, P.S., E-mail: psp_phy@unishivaji.ac.i [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur - 416 004, Maharashtra (India)

    2010-01-21

    Nickel oxide (NiO) thin films were prepared by electrodeposition technique onto the fluorine doped tin oxide (FTO) coated glass substrates in one step deposition at 20, 30, 40 and 50 min deposition times respectively. The effect of film thickness (thereby microstructural changes) on their structural, morphological, optical and electrochromic properties was investigated. The mass change with potential and cyclic voltammogram was recorded in the range from +0.3 to -0.8 V versus Ag/AgCl. One step deposition of polycrystalline cubic phase NiO was confirmed from X-ray diffraction study. Optical absorption study revealed direct band gap energy of 3.2 eV. The optical transmittance of the film decreased with increase in film thickness. A uniform granular and porous morphology of the films deposited for 20 min was observed. The film becomes more compact and devoid of pores when deposition time was increased to 30 min. Thereafter severe cracks are observed. All the films exhibit anodic electrochromism in OH{sup -} containing electrolyte (0.1 M KOH). The maximum coloration efficiency of 107 cm{sup 2}/C and electrochemical stability of up to 10{sup 4} colour/bleach cycles were observed for the films deposited for 20 min (film thickness of 104 nm).

  19. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  20. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amusan, Akinwumi A., E-mail: akinwumi.amusan@ovgu.de; Kalkofen, Bodo; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Gargouri, Hassan; Wandel, Klaus; Pinnow, Cay [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

    2016-01-15

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt{sub 3}) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO{sub 2}, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10{sup −6} Ω cm was obtained for approximately 97 nm Ag film on SiO{sub 2}/Si substrate. The thickness was determined from the SEM cross section on the SiO{sub 2}/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO{sub 2} surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images.

  1. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    International Nuclear Information System (INIS)

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt3) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO2, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10−6 Ω cm was obtained for approximately 97 nm Ag film on SiO2/Si substrate. The thickness was determined from the SEM cross section on the SiO2/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO2 surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images

  2. SEM/EDX and XRD characterization of silver nanocrystalline thin film prepared from organometallic solution precursor

    OpenAIRE

    Dimitrijević R.; Cvetković O.; Miodragović Z.; Simić M.; Manojlović D.; Jović V.

    2013-01-01

    The Ag nano-structured thin films prepared on flat glass substrates have been studied. The ball-like silver nanoparticles have been synthesized in large quantity by using a modified method of hydrolytic decomposition of silver complexes with amino types ligands formed in ethanol aqueous solution. SEM analysis revealed that Ag nanoparticles are all sphere shaped with bimodal size (40 and 70 nm) distribution. The results of XRD powder pattern examination show that Ag nanoparticles are pur...

  3. Minerals deposited as thin films

    International Nuclear Information System (INIS)

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author)

  4. Interactions in thin aqueous films

    OpenAIRE

    Hänni-Ciunel, Katarzyna

    2006-01-01

    In der Arbeit werden die Wechselwirkungen in dünnen flüssigen Filmen untersucht und modifiziert. Schaum- (gas/flüssig/gas) und Benetzungsfilme (gas/flüssig/fest) werden mittels Thin Film Pressure Balance (TFPB) untersucht. Die Apparatur wurde im Rahmen der Arbeit für die Studien an asymmetrischen Filmen aufgebaut und modifiziert. Die Ladungen an den Filmgrenzflächen werden gezielt modifiziert. Die Adsoprtion von Tensiden bestimmt die Oberflächenladung an der gas/flüssig Grenzfläche. Die Oberf...

  5. The role of thin films in wetting

    OpenAIRE

    Marmur, Abraham

    1988-01-01

    The role of thin films in wetting is reviewed. Three modes of spontaneous spreading are discussed : incomplete spreading, complete spreading and mixed-mode spreading. A thin film can be either molecular or colloidal in thickness. Molecularly adsorbed films are mainly associated with incomplete spreading. Colloidal films usually extend from the bulk of the liquid in dynamic situations of complete spreading. Their existence at equilibriuim with the bulk depends on the orientation in the gravita...

  6. Microstructural evolution of tungsten oxide thin films

    International Nuclear Information System (INIS)

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 deg. were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a 'instability wheel' model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  7. Pd-Ag thin film membrane for H{sub 2} separation. Part 2. Carbon and oxygen diffusion in the presence of CO/CO{sub 2} in the feed and effect on the H{sub 2} permeability

    Energy Technology Data Exchange (ETDEWEB)

    Abate, Salvatore; Genovese, Chiara; Perathoner, Siglinda; Centi, Gabriele [Dipartimento di Chimica industriale ed Ingegneria dei Materiali (CASPE Laboratory of INSTM), V.le F. Stagno D' Alcontre 31, 98166 Messina (Italy)

    2010-06-15

    The effect of CO and CO{sub 2} on the performance and stability of Pd-Ag thin film membranes prepared by electroless plating deposition (EPD) was investigated, observing the presence of dissociation to carbon and oxygen which slowly diffuse in the membrane influencing also H{sub 2} permeability. The effect of the two carbon oxides was investigated both separately and combined in the 400-450 C temperature range over long-term cumulative experiments (up to over 350 h) on a membrane that already worked for over 350 h in H{sub 2} or H{sub 2}-N{sub 2} mixtures. An increase of the H{sub 2} permeation flux was observed feeding only CO{sub 2} in the range 10-20%. This effect was interpreted as deriving from the facilitated H{sub 2} flux caused from oxygen diffusion (deriving from CO{sub 2} dissociation) in the membrane. CO induces instead a partial inhibition on the H{sub 2} flux deriving from the negative effect of CO competitive chemisorption as well as C diffusion in the membrane, which overcome the positive effect associated to oxygen diffusion in the membrane. Carbon and oxygen diffuse through the membrane with a rate two order of magnitude lower than hydrogen, and recombinate at the permeate side forming CO, CO{sub 2} and CH{sub 4} which amount increases with time-on-stream. The effect is reversible and not associated with the creation of cracks or defects in the membrane, as supported by leak tests. (author)

  8. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  9. Effects of γ-irradiation on the optical properties of a-(Sb 0.1Ge 0.3Se 0.6) and Ag 5(Sb 0.1Ge 0.3Se 0.6) 95 thin film material

    Science.gov (United States)

    Salem, A. M.; Marzouk, S. Y.; Moustafa, S. H.; Selim, M. S.

    2007-09-01

    The amorphous behaviour of (Sb0.1Ge0.3Se0.6) and Ag5(Sb0.1Ge0.3Se0.6)95 chalcogenide thin film materials deposited at room temperature onto glass substrates by thermal evaporation process was investigated using X-ray diffraction technique. The surface morphology as well as the elemental chemical composition of the as-deposited films was investigated via scanning electron microscopy. The optical transmission and reflection spectra of as-deposited films and that exposed for different γ-dose were recorded at room temperature in the wavelength range of 600-2500 nm. Systematic studies of the refractive index, extinction coefficient and optical band gap have been presented as a function of the γ-dose. The dispersion of the refractive index for such films is discussed in terms of the single-oscillator Wemple-DiDomenico model, which was presented.

  10. Thermoelectric Properties of Hybrid Thin Films of PEDOT-PSS and Silver Nanowires

    Science.gov (United States)

    Yoshida, Akihito; Toshima, Naoki

    2016-06-01

    We report the thermoelectric (TE) properties of organic-inorganic hybrid thin films composed of conductive polymer, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS), and inorganic silver nanowire (AgNW). Two kinds of AgNW with different wire length, 3 μm and 27 μm, were used in this study. The AgNW/PEDOT-PSS hybrid films showed an increase in electrical conductivity ( σ) with increase in AgNW concentration. The maximum value of σ obtained in this system was ca. 10,000 S cm-1. The films containing long AgNWs (L-AgNWs) showed higher σ relative to short AgNWs (S-AgNWs) at given concentration, which results from the fact that longer nanowires can easily form a percolated structure. The formation of a percolated structure was confirmed by scanning electron microscopy (SEM) observation. On the other hand, the Seebeck coefficient ( S) of the hybrid films showed the opposite dependence on AgNW concentration. This decrease in S with increasing AgNW concentration is probably because of increase in carrier number due to the AgNWs. These results suggest that the presented organic-inorganic hybrid system is one example where the electrical conductivity and TE properties can be tuned by use of a nanocomposite.

  11. Ellipsometric Studies on Silver Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    M. Pandiaraman

    2011-01-01

    Full Text Available Silver telluride thin films of thickness between 45 nm and 145 nm were thermally evaporated on well cleaned glass substrates at high vacuum better than 10 – 5 mbar. Silver telluride thin films are polycrystalline with monoclinic structure was confirmed by X-ray diffractogram studies. AFM and SEM images of these films are also recorded. The phase ratio and amplitude ratio of these films were recorded in the wavelength range between 300 nm and 700 nm using spectroscopic ellipsometry and analysed to determine its optical band gap, refractive index, extinction coefficient, and dielectric functions. High absorption coefficient determined from the analysis of recorded spectra indicates the presence of direct band transition. The optical band gap of silver telluride thin films is thickness dependent and proportional to square of reciprocal of thickness. The dependence of optical band gap of silver telluride thin films on film thickness has been explained through quantum size effect.

  12. Quantum-well-driven magnetism in thin films

    DEFF Research Database (Denmark)

    Mirbt, S.; Johansson, B.; Skriver, Hans Lomholt

    1996-01-01

    We have performed local spin-density calculations for an fee (100) Ag substrate covered by 1 to 16 monolayers (ML) of Pd. We find that thin films of Pd are magnetic with a moment of the order of 0.3 mu(B) except for films of 1-2 ML and 5-7 ML where magnetism is completely suppressed. We present a...... physically transparent explanation of this behavior in terms of the Stoner picture and magnetic quantum-well states....

  13. Morphology and oxygen incorporation effect on antimicrobial activity of silver thin films

    Science.gov (United States)

    Rebelo, Rita; Manninen, N. K.; Fialho, Luísa; Henriques, Mariana; Carvalho, Sandra

    2016-05-01

    Ag and AgxO thin films were deposited by non-reactive and reactive pulsed DC magnetron sputtering, respectively, with the final propose of functionalizing the SS316L substrate with antibacterial properties. The coatings were characterized chemically, physically and structurally. The coatings nanostructure was assessed by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), while the coatings morphology was determined by scanning electron microscopy (SEM). The XRD and XPS analyses suggested that Ag thin film is composed by metallic Ag, which crystallizes in fcc-Ag phase, while the AgxO thin film showed both metallic Ag and Agsbnd O bonds, which crystalize in fcc-Ag and silver oxide phases. The SEM results revealed that Ag thin film formed a continuous layer, while AgxO layer was composed of islands with hundreds of nanometers surrounded by small nanoparticles with tens of nanometers. The surface wettability and surface tension parameters were determined by contact angle measurements, being found that Ag and AgxO surfaces showed very similar behavior, with all the surfaces showing a hydrophobic character. In order to verify the antibacterial behavior of the coatings, halo inhibition zone tests were realized for Staphylococcus epidermidis and Staphylococcus aureus. Ag coatings did not show antibacterial behavior, contrarily to AgxO coating, which presented antibacterial properties against the studied bacteria. The presence of silver oxide phase along with the development of different morphology was pointed as the main factors in the origin of the antibacterial effect found in AgxO thin film. The present study demonstrated that AgxO coating presented antibacterial behavior and its application in cardiovascular stents is promising.

  14. Electrostatic thin film chemical and biological sensor

    Science.gov (United States)

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  15. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  16. PREPARATION AND CHARACTERIZATION OF POLY-CRYSTALLINE SILICON THIN FILM

    Institute of Scientific and Technical Information of China (English)

    Y.F. Hu; H. Shen; Z.Y. Liu; L.S. Wen

    2003-01-01

    Poly-crystalline silicon thin film has big potential of reducing the cost of solar cells.In this paper the preparation of thin film is introduced, and then the morphology of poly-crystalline thin film is discussed. On the film we developed poly-crystalline silicon thin film solar cells with efficiency up to 6. 05% without anti-reflection coating.

  17. Thermal Expansion Coefficients of Thin Crystal Films

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    The formulas for atomic displacements and Hamiltonian of a thin crystal film in phonon occupation number representation are obtained with the aid of Green's function theory. On the basis of these results, the formulas for thermal expansion coefficients of the thin crystal film are derived with the perturbation theory, and the numerical calculations are carried out. The results show that the thinner films have larger thermal expansion coefficients.

  18. Slip-controlled thin film dynamics

    OpenAIRE

    Fetzer, R.; Rauscher, M; Münch, A.; Wagner, B. A.; Jacobs, K.

    2006-01-01

    In this study, we present a novel method to assess the slip length and the viscosity of thin films of highly viscous Newtonian liquids. We quantitatively analyse dewetting fronts of low molecular weight polystyrene melts on Octadecyl- (OTS) and Dodecyltrichlorosilane (DTS) polymer brushes. Using a thin film (lubrication) model derived in the limit of large slip lengths, we can extract slip length and viscosity. We study polymer films with thicknesses between 50 nm and 230 nm and various tempe...

  19. Structural and spectroscopic studies of thin film of silver nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Khan, M.A. Majeed, E-mail: majeed_phys@rediffmail.com [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451 (Saudi Arabia); Kumar, Sushil [Department of Physics, Chaudhary Devi Lal University, Sirsa, 125055 (India); Ahamed, Maqusood; Alrokayan, Salman A. [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451 (Saudi Arabia); Alsalhi, M.S. [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451 (Saudi Arabia); Department of Physics and Astronomy, King Saud University, Riyadh, 11451 (Saudi Arabia); Alhoshan, Mansour [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451 (Saudi Arabia); Chemical Engineering Department, King Saud University, Riyadh, 11451 (Saudi Arabia); Aldwayyan, A.S. [King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451 (Saudi Arabia); Department of Physics and Astronomy, King Saud University, Riyadh, 11451 (Saudi Arabia)

    2011-10-01

    We report the deposition of thin film of silver (Ag) nanoparticles by wet chemical method. The as-synthesized Ag nanoparticles have been characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray energy dispersive spectroscopy (EDS), field emission transmission electron microscopy (FETEM) and high-resolution TEM (HRTEM), UV-vis spectroscopy and thermogravimetric-differential thermal analysis (TG-DTA) respectively. FESEM image indicates that the silver film prepared on the quartz substrate is smooth and dense. XRD pattern reveals the face-centered cubic (fcc) structure of silver nanoparticles. EDS spectrum indicates that samples are nearly stoichiometric. From TEM analysis, it is found that the size of high purity Ag nanoparticles is ranging from 10 to 20 nm with slight agglomeration. Absorption in UV-vis region by these nanoparticles is characterized by the features reported in the literature, namely, a possible Plasmon peak at {approx}403 nm. Optical absorbance spectra analysis reveals that the Ag film has an indirect band structure with bandgap energy 3.88 eV. TGA/DTA studies revealed that a considerable weight loss occurs between 175 and 275 deg. C; and the reaction is exothermic.

  20. BDS thin film damage competition

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  1. Thin-film optical shutter

    Science.gov (United States)

    Matlow, S. L.

    1981-02-01

    The ideal solution to the excessive solar gain problem is an optical shutter, a device which switches from being highly transmissive to solar radiation to being highly reflective to solar radiation when a critical temperature is reached in the enclosure. The switching occurs because one or more materials in the device undergo a phase transition at the critical temperature. A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, was chosen as the one most likely to meet all of the requirements of the thin film optical shutter project (TFOS). The reason for this choice is explored. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a quantum mechanical method, the equilibrium bond length (EBL) theory, was developed. Some results of EBL theory are included.

  2. Surface plasmon enhanced photoluminescence in amorphous silicon carbide films by adjusting Ag island film sizes

    International Nuclear Information System (INIS)

    Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide (α-SiC:H) films, and the influences of Ag island films on the optical properties of the α-SiC:H films are investigated. Atomic force microscope images show that Ag nanoislands are formed after Ag coating, and the size of the Ag islands increases with increasing Ag deposition time. The extinction spectra indicate that two resonance absorption peaks which correspond to out-of-plane and in-plane surface plasmon modes of the Ag island films are obtained, and the resonance peak shifts toward longer wavelength with increasing Ag island size. The photoluminescence (PL) enhancement or quenching depends on the size of Ag islands, and PL enhancement by 1.6 times on the main PL band is obtained when the sputtering time is 10 min. Analyses show that the influence of surface plasmons on the PL of α-SiC:H is determined by the competition between the scattering and absorption of Ag islands, and PL enhancement is obtained when scattering is the main interaction between the Ag islands and incident light. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Enhanced photocatalysis by coupling of anatase TiO2 film to triangular Ag nanoparticle island.

    Science.gov (United States)

    Xu, Jinxia; Xiao, Xiangheng; Ren, Feng; Wu, Wei; Dai, Zhigao; Cai, Guangxu; Zhang, Shaofeng; Zhou, Juan; Mei, Fei; Jiang, Changzhong

    2012-01-01

    In order to overcome the low utilization ratio of solar light and high electron-hole pair recombination rate of TiO2, the triangular Ag nanoparticle island is covered on the surface of the TiO2 thin film. Enhancement of the photocatalytic activity of the Ag/TiO2 nanocomposite system is observed. The increase of electron-hole pair generation is caused by the enhanced near-field amplitudes of localized surface plasmon of the Ag nanoparticles. The efficiently suppressed recombination of electron-hole pair caused by the metal-semiconductor contact can also enhance the photocatalytic activity of the TiO2 film. PMID:22548875

  4. Surface Thiolation of Al Microspheres to Deposite Thin and Compact Ag Shells for High Conductivity.

    Science.gov (United States)

    Wang, Yilong; Wen, Jianghong; Zhao, Suling; Chen, Zhihong; Ren, Ke; Sun, Jie; Guan, Jianguo

    2015-12-15

    In this work, we have demonstrated a method for controllable thiolated functionalization coupled with electroless silver plating to achieve aluminum@silver (Al@Ag) core-shell composite particles with thin and compact layers. First, Al microspheres were functionalized by a well-known polymerizable silane coupling agent, i.e., 3-mercaptopropyltrimethoxysilane (MPTMS). Decreasing the ethanol-to-water volume ratio (F) in silane solution produces modification films with high content of thiol groups on Al microspheres, owing to the dehydration of silane molecules with hydroxyl groups on Al microspheres and self-polymerization of silane molecules. Then, ethanol was used as one of the solvents to play a major role in the uniform dispersion of silane coupling agent in the solution, resulting in uniformly distributing and covalently attaching thiol groups on Al microspheres. In electroless silver plating, thiol groups being densely grafted on the surface of Al microspheres favor the heterogeneous nucleation of Ag, since the thiol group can firmly bind with Ag(+) and enable the in situ reduction by the reducing reagent. In this manner, dense Ag nuclei tend to produce thin and compact silver shells on the Al microspheres surfaces. The as-obtained Al@Ag core-shell composite particles show a resistivity as low as (8.58 ± 0.07) × 10(-5) Ω·cm even when the Ag content is as low as 15.46 wt %. Therefore, the as-obtained Al@Ag core-shell composite particles have advantages of low weight, low silver content and high conductivity, which could make it a promising candidate for application in conductive and electromagnetic shielding composite materials. PMID:26574653

  5. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Rachana Gupta; Mukul Gupta; Thomas Gutberlet

    2008-11-01

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron sputtering technique at ambient temperature. The film prepared with only Ar gas shows reflections corresponding to the permalloy phase in X-ray diffraction (XRD) pattern. The addition of nitrogen during sputtering results in broadening of the peaks in XRD pattern, which finally leads to an amorphous phase. The - loop for the sample prepared with only Ar gas is matching well with the values obtained for the permalloy. For the samples prepared with increased nitrogen partial pressure the magnetic moment decreased rapidly and the values of coercivity increased. The polarized neutron reflectivity measurements (PNR) were performed in the sample prepared with only Ar gas and with nitrogen partial pressure of 5 and 10%. It was found that the spin-up and spin-down reflectivities show exactly similar reflectivity for the sample prepared with Ar gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity.

  6. Electrical and photovoltaic properties of InxSe1-x thin films

    International Nuclear Information System (INIS)

    Electrical and photovoltaic properties of InxSe1-x thin films obtained by flash evaporation are studied. The annealing temperature effect is also investigated. Hall measurements as function of the temperature show that the predominant scattering mechanism is the scattering by the grain boundaries. Parameters for the photoexcited carriers are given, and the photovoltaic effect is observed on a SnO2/InxSe1-x/Ag structure in thin films. (author)

  7. High-Jc YBa2Cu3O7-x-Ag superconducting thin films synthesized through a fluorine-free MOD method

    DEFF Research Database (Denmark)

    Tang, Xiao; Yue, Zhao; Wu, W.; Grivel, Jean-Claude; Andersen, Niels Hessel

    2015-01-01

    Obtaining a high critical current density (Jc) remains the main challenge in developing fluorine-free metal organic deposition (MOD) methods to fabricate YBCO superconducting thin films. Silver addition was used to raise the Jc values in this research work. By reacting with propionic acid and amm...

  8. TiO2 thin film photocatalyst

    Institute of Scientific and Technical Information of China (English)

    YU Jiaguo

    2004-01-01

    It is well known that the photocatalytic activity of TiO2 thin films strongly depends on the preparing methods and post-treatment conditions, since they have a decisive influence on the chemical and physical properties of TiO2 thin films.Therefore, it is necessary to elucidate the influence of the preparation process and post-treatment conditions on the photocatalytic activity and surface microstructures of the films. This review deals with the preparation of TiO2 thin film photocatalysts by wet-chemical methods (such as sol-gel, reverse micellar and liquid phase deposition) and the comparison of various preparation methods as well as their advantage and disadvantage. Furthermore, it is discussed that the advancement of photocatalytic activity, super-hydrophilicity and bactericidal activity of TiO2 thin film photocatalyst in recent years.

  9. Alumina Thin Film Growth: Experiments and Modeling

    OpenAIRE

    Wallin, Erik

    2007-01-01

    The work presented in this thesis deals with experimental and theoretical studies related to the growth of crystalline alumina thin films. Alumina, Al2O3, is a polymorphic material utilized in a variety of applications, e.g., in the form of thin films. Many of the possibilities of alumina, and the problems associated with thin film synthesis of the material, are due to the existence of a range of different crystalline phases. Controlling the formation of the desired phase and the transformati...

  10. Electrochromism of amorphous ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Se-Hee; Liu, Ping; Tracy, C. Edwin; Deb, Satyen K. [National Renewable Energy Laboratory, Center for Basic Sciences, 1617 Cole Boulevard, Golden, CO 80401 (United States); Cheong, Hyeonsik M. [Sogang University, Shinsoo-Dong, Seoul 121-742 (Korea, Republic of)

    2003-12-01

    We report on the electrochromic behavior of amorphous ruthenium oxide thin films and their electrochemical characteristics for use as counterelectrodes for electrochromic devices. Hydrous ruthenium oxide thin films were prepared by cyclic voltammetry on ITO coated glass substrates from an aqueous ruthenium chloride solution. The cyclic voltammograms of this material show the capacitive behavior including two redox reaction peaks in each cathodic and anodic scan. The ruthenium oxide thin film electrode exhibits a 50% modulation of optical transmittance at 670 nm wavelength with capacitor charge/discharge.

  11. Technology of Environmental Thin Film

    International Nuclear Information System (INIS)

    This book indicates environment and surface engineering with technical term, the newest and eco-friendly technology, surface engineering and thick film, technology of surface analysis and reality test, present condition of electronic component in business, physical vapor deposition method, chemical vapor deposition method, plasma assisted etching, part materials of every functional film and manufacturing method, film resistance materials, film gene materials, total using of various film, film superconductivity materials, and photo electricity film.

  12. Ag films annealed in a nanoscale limited area for surface-enhanced Raman scattering detection

    International Nuclear Information System (INIS)

    By constructing a limited two-dimensional (2D) area to regulate the coalescence of deposited Ag nanoparticles and to change the degree of aggregation of nanoparticles under annealing, a configuration of particles on pillar (POP) was fabricated successfully and high SERS enhancement similar to ‘hot spots’ was generated on the POP. With the assistance of nanosphere lithography (NSL), we constructed a silicon pillar array with a column diameter of 200 nm and a height of 155 nm. A thin layer of Ag film with a several nanometer thickness was deposited on the top of the silicon pillar array and then was annealed under 200 °C. Differing from the annealed Ag on a flat surface, the aggregation of Ag on the top of a pillar was predominated by the limited area, forming more Ag nanoaggregates. The SERS spectra demonstrated that the POP contributed to higher SERS enhancement than the silicon slide modified by the some thickness annealed Ag film. As a consequence, by means of POP configuration, the lowest SERS detection concentration for 4-mercaptopyridine was able to reach the level of 1.0 × 10−10 M. (papers)

  13. Heat shrink formation of a corrugated thin film thermoelectric generator

    International Nuclear Information System (INIS)

    Highlights: • Demonstrate and characterize a thermoelectric generator with a corrugated geometry. • Employ a novel heat shrink fabrication approach compatible with low-cost processing. • Use thermal impedance modeling to explore design potential. • Corrugated design shown to be advantageous for low heat-flux density applications. - Abstract: A thin film thermoelectric (TE) generator with a corrugated architecture is demonstrated formed using a heat-shrink fabrication approach. Fabrication of the corrugated TE structure consists of depositing thin film thermoelectric elements onto a planar non-shrink polyimide substrate that is then sandwiched between two uniaxial stretch-oriented co-polyester (PET) films. The heat shrink PET films are adhered to the polyimide in select locations, such that when the structure is placed in a high temperature environment, the outer films shrink resulting in a corrugated core film and thermoelectric elements spanning between the outer PET films. The module has a cross-plane heat transfer architecture similar to a conventional bulk TE module, but with heat transfer in the plane of the thin film thermoelectric elements, which assists in maintaining a significant temperature difference across the thermoelectric junctions. In this demonstration, Ag and Ni films are used as the thermoelectric elements and a Seebeck coefficient of 14 μV K−1 is measured with a maximum power output of 0.22 nW per couple at a temperature difference of 7.0 K. We then theoretically consider the performance of this device architecture with high performance thermoelectric materials in the heat sink limited regime. The results show that the heat-shrink approach is a simple fabrication method that may be advantageous in large-area, low power density applications. The fabrication method is also compatible with simple geometric modification to achieve various form factors and power densities to customize the TE generator for a range of applications

  14. Research on Advanced Thin Film Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, Ronald B. [Tufts Univ., Medford, MA (United States)

    2003-11-24

    During the past 7 years, the Tufts group has been carrying out research on advanced thin film batteries composed of a thin film LiCo02 cathode (positive electrode), a thin film LiPON (lithium phosphorous oxynitride) solid electrolyte, and a thin film graphitic carbon anode (negative electrode), under grant DE FG02-95ER14578. Prior to 1997, the research had been using an rfsputter deposition process for LiCoOi and LiPON and an electron beam evaporation or a controlled anode arc evaporation method for depositing the carbon layer. The pre-1997 work led to the deposition of a single layer cell that was successfully cycled for more than 400 times [1,2] and the research also led to the deposition of a monolithic double-cell 7 volt battery that was cycled for more than 15 times [3]. Since 1997, the research has been concerned primarily with developing a research-worthy and, possibly, a production-worthy, thin film deposition process, termed IBAD (ion beam assisted deposition) for depositing each ofthe electrodes and the electrolyte of a completely inorganic solid thin film battery. The main focus has been on depositing three materials - graphitic carbon as the negative electrode (anode), lithium cobalt oxide (nominally LiCoCb) as the positive electrode (cathode), and lithium phosphorus oxynitride (LiPON) as the electrolyte. Since 1998, carbon, LiCoOa, and LiPON films have been deposited using the IBAD process with the following results.

  15. Permanent laser conditioning of thin film optical materials

    Science.gov (United States)

    Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

    1995-01-01

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  16. Autophagy induction by silver nanowires: A new aspect in the biocompatibility assessment of nanocomposite thin films

    International Nuclear Information System (INIS)

    Nanomaterials and their enabled products have increasingly been attracting global attention due to their unique physicochemical properties. Among these emerging products, silver nanowire (AgNW)-based thin films are being developed for their promising applications in next generation nanoelectronics and nanodevices. However, serious concerns remain about possible health and safety risks they may pose. Here, we employed a multi-modal systematic biocompatibility assessment of thin films incorporating AgNW. To represent the possible routes of nanomaterial entry during occupational or environmental exposure, we employed four different cell lines of epithelial, endothelial, gastric, and phagocytic origin. Utilizing a cell-based automated image acquisition and analysis procedure in combination with real-time impedance sensing, we observed a low level of cytotoxicity of AgNW, which was dependent on cell type, nanowire lengths, doses and incubation times. Similarly, no major cytotoxic effects were induced by AgNW-containing thin films, as detected by conventional cell viability and imaging assays. However, transmission electron microscopy and Western immunoblotting analysis revealed AgNW-induced autophasosome accumulation together with an upregulation of the autophagy marker protein LC3. Autophagy represents a crucial mechanism in maintaining cellular homeostasis, and our data for the first time demonstrate triggering of such mechanism by AgNW in human phagocytic cells. Finally, atomic force microscopy revealed significant changes in the topology of cells attaching and growing on these films as substrates. Our findings thus emphasize the necessity of comprehensive biohazard assessment of nanomaterials in modern applications and devices and a thorough analysis of risks associated with their possible contact with humans through occupational or environmental exposure. Highlights: ► Thin films containing nanomaterials are subject to increasing contact with humans. ► This

  17. Phase transformation kinetics in thin films

    International Nuclear Information System (INIS)

    This book contains papers presented at the materials Research Society Symposium on Phase Transformations Kinetics in Thin Films held in Anaheim, California from April 29 through May 1, 1991. This symposium provided a multidisciplinary forum for explorations, on experimental and theoretical levels, of thin film reactions and stability, phase nucleation and growth, and amorphization. The papers in this volume, refereed by the peer review process, are organized according to materials and techniques and do not reflect the order of presentations at the symposium. Symposium sessions were organized in the areas of thin-film crystallization, solid-state amorphization, interfacial reactions, solid-state transformations, phase-change optical media and ferroelectric thin films. Contributed papers ranged from theoretical determination of the limits to melt nucleation to commercial concerns of processing techniques for specific properties. Despite this breadth, the similarity of experimental techniques and thermodynamic underpinnings for most of the materials provided a common basis for discussions

  18. Highly stretchable wrinkled gold thin film wires

    International Nuclear Information System (INIS)

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications

  19. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: mkhine@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  20. Electroless plating of thin gold films directly onto silicon nitride thin films and into micropores.

    Science.gov (United States)

    Whelan, Julie C; Karawdeniya, Buddini Iroshika; Bandara, Y M Nuwan D Y; Velleco, Brian D; Masterson, Caitlin M; Dwyer, Jason R

    2014-07-23

    A method to directly electrolessly plate silicon-rich silicon nitride with thin gold films was developed and characterized. Films with thicknesses coating planar, curved, and line-of-sight-obscured silicon nitride surfaces. PMID:24999923

  1. High temperature superconducting thin film microwave filters

    International Nuclear Information System (INIS)

    Low loss thin films of high temperature superconductors (HTSC) on MgO as well as LaAlO3 substrates has been successfully developed. This effort aims at the development of application oriented innovations, such as HTSC based passive microwave devices. As an initial attempt in developing microwave devices, we have designed, fabricated and tested HTSC microstrip resonators at X-band using YBCO thin films on LaAlO3 substrates

  2. Advances in CZTS thin films and nanostructured

    Science.gov (United States)

    Ali, N.; Ahmed, R.; Bakhtiar-Ul-Haq; Shaari, A.

    2015-06-01

    Already published data for the optical band gap (Eg) of thin films and nanostructured copper zinc tin sulphide (CZTS) have been reviewed and combined. The vacuum (physical) and non-vacuum (chemical) processes are focused in the study for band gap comparison. The results are accumulated for thin films and nanostructured in different tables. It is inferred from the re- view that the nanostructured material has plenty of worth by engineering the band gap for capturing the maximum photons from solar spectrum.

  3. Laser-annealing of thin semiconductor films

    OpenAIRE

    Boneberg, Johannes; Nedelcu, Johann; Bucher, Ernst; Leiderer, Paul

    1994-01-01

    Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin film, depending on the energy density of the amding laser.

  4. Characteristics and durability of fluoropolymer thin films

    OpenAIRE

    Cheneler, David; Bowen, James; Evans, Stephen D.; Górzny, Marcin; Adams, Michael J; Ward, Michael C.L.

    2011-01-01

    The use of plasma-polymerised fluoropolymer (CFxOy) thin films in the manufacture of microelectromechanical systems (MEMS) devices is well-established, being employed in the passivation step of the deep reactive ion etching (DRIE) process, for example. This paper presents an investigation of the effect of exposure to organic and aqueous liquid media on plasma polymerised CFxOy thin films. Atomic force microscopy (AFM), scanning electron microscopy (SEM), ellipsometry, X-ray photoelectron spec...

  5. Thin film description by wavelet coefficients statistics

    Czech Academy of Sciences Publication Activity Database

    Boldyš, Jiří; Hrach, R.

    2005-01-01

    Roč. 55, č. 1 (2005), s. 55-64. ISSN 0011-4626 Grant ostatní: GA UK(CZ) 173/2003 Institutional research plan: CEZ:AV0Z10750506 Keywords : thin films * wavelet transform * descriptors * histogram model Subject RIV: BD - Theory of Information Impact factor: 0.360, year: 2005 http://library.utia.cas.cz/separaty/2009/ZOI/boldys-thin film description by wavelet coefficients statistics .pdf

  6. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  7. Studies in thin film flows

    CERN Document Server

    McKinley, I S

    2000-01-01

    the general case of non-zero capillary number numerically. Using the lubrication approximation to the Navier-Stokes equations we investigate the evolution and stability of a thin film of incompressible Newtonian fluid on a planar substrate subjected to a jet of air blowing normally to the substrate. For the simple model of the air jet we adopt, the initially axisymmetric problems we study are identical to those of a drop spreading on a turntable rotating at constant angular velocity (the simplest model for spin coating). We consider both drops without a dry patch (referred to as 'non-annular') and drops with a dry patch at their centre (referred to as 'annular'). First, both symmetric two-dimensional and axisymmetric three-dimensional drops are considered in the quasi-static limit of small capillary number. The evolution of both non-annular and annular drops and the stability of equilibrium solutions to small perturbations with zero wavenumber are determined. Using a specially developed finite-difference code...

  8. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  9. Superconducting thin-film gradiometer

    International Nuclear Information System (INIS)

    We describe the design, fabrication, and performance of planar thin-film dc SQUID's and planar gradiometers in which a dc SQUID is incorporated as a null detector. Each gradiometer was fabricated on a planar substrate and measured an off-diagonal component of changes in the magnetic field gradient. The gradiometer with the highest sensitivity had 127 x 33-mm loops that could be connected in parallel or in series: The sensitivities were 2.1 x 10-13 and 3.7 x 10-13 T m-1 Hz/sup -1/2/, respectively. The intrinsic balance of the gradiometers was about 100 ppm for fields parallel to their plane, and a balance of about 1 ppm could be achieved for fields perpendicular to their plane. When the series-loop gradiometer was rotated through 3600 in the earth's field, the output returned to its initial value to within an amount corresponding to a balance of 1 ppm. Possible improvements in sensitivity are discussed

  10. Microstructural evolution of tungsten oxide thin films

    Science.gov (United States)

    Hembram, K. P. S. S.; Thomas, Rajesh; Rao, G. Mohan

    2009-10-01

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 °C were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a "instability wheel" model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  11. Microstructural evolution of tungsten oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hembram, K.P.S.S., E-mail: hembram@isu.iisc.ernet.in [Department of Instrumentation, Indian Institute of Science, Bangalore - 560 012 (India); Theoretical Science Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore - 560064 (India); Thomas, Rajesh; Rao, G. Mohan [Department of Instrumentation, Indian Institute of Science, Bangalore - 560 012 (India)

    2009-10-30

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 deg. were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a 'instability wheel' model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  12. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    International Nuclear Information System (INIS)

    The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry

  13. Indium sulfide thin films as window layer in chemically deposited solar cells

    International Nuclear Information System (INIS)

    Indium sulfide (In2S3) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO3)3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In2S3. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In2S3 thin films are photosensitive with an electrical conductivity value in the range of 10−3–10−7 (Ω cm)−1, depending on the film preparation conditions. We have demonstrated that the In2S3 thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO2:F/In2S3/Sb2S3/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm2. - Highlights: • In2S3 thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In2S3 films. • We made chemically deposited solar cells using the In2S3 thin films

  14. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  15. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jisheng

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  16. Exciton absorption spectrum of thin Ag sub 2 ZnI sub 4

    CERN Document Server

    Yunakova, O N; Kovalenko, E N

    2002-01-01

    In Ag sub 2 ZnI sub 4 compound thin films one investigated into the electron spectrum of absorption within 3-6 eV photon energy range. The boundary of interband absorption is determined to correspond to the direct permitted transitions with E sub g = 3.7 eV forbidden gap width. A strong exciton band at E = 3.625 eV (80 K) GAMMA half width temperature run of which within 80-390 K range is governed by exciton-phonon interaction typical for quasi-single-dimensional excitons, is adjacent to the absorption boundary. At T <= 390 K one observes a bend in E(T) and GAMMA(T) dependences associated with generation of the Frenkel defects and followed by transfer of Ag ions to the interstices and vacancies of the compound crystalline lattice

  17. Exciton absorption spectrum of thin Ag2ZnI4

    International Nuclear Information System (INIS)

    In Ag2ZnI4 compound thin films one investigated into the electron spectrum of absorption within 3-6 eV photon energy range. The boundary of interband absorption is determined to correspond to the direct permitted transitions with Eg = 3.7 eV forbidden gap width. A strong exciton band at E = 3.625 eV (80 K) Γ half width temperature run of which within 80-390 K range is governed by exciton-phonon interaction typical for quasi-single-dimensional excitons, is adjacent to the absorption boundary. At T ≤ 390 K one observes a bend in E(T) and Γ(T) dependences associated with generation of the Frenkel defects and followed by transfer of Ag ions to the interstices and vacancies of the compound crystalline lattice

  18. Post deposition purification of PTCDA thin films

    International Nuclear Information System (INIS)

    The decomposition of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) molecules during evaporation of unpurified raw material in ultra high vacuum was studied. The fragments were identified by mass spectrometry and the influence of these fragments and further contaminations of the raw material on the electronic structure of PTCDA thin films was measured by photoemission spectroscopy. Annealing of contaminated PTCDA films was tested as cheap and easy to perform method for (partial) post deposition purification of the contaminated films

  19. Atomic force microscopy study of thermal stability of silver selenide thin films grown on silicon

    International Nuclear Information System (INIS)

    Silver selenide thin films were grown on silicon substrates by the solid-state reaction of sequentially deposited Se and Ag films of suitable thickness. Transmission electron microscopy and particle-induced X-ray emission studies of the as-deposited films showed the formation of single phase polycrystalline silver selenide from the reaction of Ag and Se films. Atomic force microscopy images of the as-deposited and films annealed at different temperatures in argon showed the film morphology to evolve into an agglomerated state with annealing temperature. The results indicate that when annealed above 473 K, silver selenide films on silicon become unstable and agglomerate through holes generated at grain boundaries

  20. Optical and morphological characterization of photocatalytic TiO2 thin films doped with silver

    International Nuclear Information System (INIS)

    Silver-doped titanium dioxide thin films were deposited on glass substrates by the sol-gel process. Undoped films and films doped with 1 and 3 mol% Ag were annealed at 100 or 500 oC. The optical and morphological properties of the films were analyzed by optical absorption spectroscopy and scanning electron microscopy. Additionally, the films were evaluated for their ability to degrade methylene blue. It was found that the photocatalytic activity is barely sensitive to silver doping for films annealed at 100 oC, whereas the effect of silver resulted in enhanced photocatalytic activity for films annealed at 500 oC. For the latter annealing temperature, the photocatalytic activity increased with increasing Ag doping concentration.

  1. Polymer surfaces, interfaces and thin films

    International Nuclear Information System (INIS)

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs

  2. Thin-film Rechargeable Lithium Batteries

    Science.gov (United States)

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  3. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  4. Thin Ice Films at Mineral Surfaces.

    Science.gov (United States)

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood. PMID:27377606

  5. Carrier lifetimes in thin-film photovoltaics

    Science.gov (United States)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  6. Nanostructured thin films as functional coatings

    Energy Technology Data Exchange (ETDEWEB)

    Lazar, Manoj A; Tadvani, Jalil K; Tung, Wing Sze; Lopez, Lorena; Daoud, Walid A, E-mail: Walid.Daoud@sci.monash.edu.au [School of Applied Sciences and Engineering, Monash University, Churchill, VIC 3842 (Australia)

    2010-06-15

    Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

  7. Nanostructured thin films as functional coatings

    International Nuclear Information System (INIS)

    Nanostructured thin films is one of the highly exploiting research areas particularly in applications such as photovoltaics, photocatalysis and sensor technologies. Highly tuned thin films, in terms of thickness, crystallinity, porosity and optical properties, can be fabricated on different substrates using the sol-gel method, chemical solution deposition (CSD), electrochemical etching, along with other conventional methods such as chemical vapour deposition (CVD) and physical vapour deposition (PVD). The above mentioned properties of these films are usually characterised using surface analysis techniques such as XRD, SEM, TEM, AFM, ellipsometry, electrochemistry, SAXS, reflectance spectroscopy, STM, XPS, SIMS, ESCA, X-ray topography and DOSY-NMR. This article presents a short review of the preparation and characterisation of thin films of nanocrystalline titanium dioxide and modified silicon as well as their application in solar cells, water treatment, water splitting, self cleaning fabrics, sensors, optoelectronic devices and lab on chip systems.

  8. Preparation of organic thin-film field effect transistor

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The organic thin-film field effect transistor was prepared through vacuum deposition by using teflon as di-electric material. Indium-tin-oxide acted as the source and drain electrodes. Copper phthalocyanine and teflon were used as the semiconductor layer and dielectric layer, respectively. The gate electrode was made of Ag. The channel length between the source and drain was 50 μm. After preparing the source and drain electrodes by lithography, the copper phthalocyanine layer, teflon layer and Ag layerwere prepared by vacuum deposition sequentially. The field effect electron mobility of the device reached 1.1×10ˉ6 cm2/(V@s), and the on/off current ratio reached 500.

  9. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    Science.gov (United States)

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement. PMID:26736028

  10. Niobium Thin Film Characterization for Thin Film Technology Used in Superconducting Radiofrequency Cavities

    Science.gov (United States)

    Dai, Yishu; Valente-Feliciano, Anne-Marie

    2015-10-01

    Superconducting RadioFrequency (SRF) penetrates about 40-100 nm of the top surface, making thin film technology possible in producing superconducting cavities. Thin film is based on the deposition of a thin Nb layer on top of a good thermal conducting material such as Al or Cu. Thin film allows for better control of the surface and has negligible response to the Earth's magnetic field, eliminating the need for magnetic shielding of the cavities. Thin film superconductivity depends heavily on coating process conditions, involving controllable parameters such as crystal plane orientation, coating temperature, and ion energy. MgO and Al2O3 substrates are used because they offer very smooth surfaces, ideal for studying film growth. Atomic Force Microscopy is used to characterize surface's morphology. It is evident that a lower nucleation energy and a long coating time increases the film quality in the r-plane sapphire crystal orientation. The quality of the film increases with thickness. Nb films coated on r-plane, grow along the (001) plane and yield a much higher RRR compared to the films grown on a- and c-planes. This information allows for further improvement on the research process for thin film technology used in superconducting cavities for the particle accelerators. National Science Foundation, Department of Energy, Jefferson Lab, Old Dominion University.

  11. Electrochemical Analysis of Conducting Polymer Thin Films

    Directory of Open Access Journals (Sweden)

    Bin Wang

    2010-04-01

    Full Text Available Polyelectrolyte multilayers built via the layer-by-layer (LbL method has been one of the most promising systems in the field of materials science. Layered structures can be constructed by the adsorption of various polyelectrolyte species onto the surface of a solid or liquid material by means of electrostatic interaction. The thickness of the adsorbed layers can be tuned precisely in the nanometer range. Stable, semiconducting thin films are interesting research subjects. We use a conducting polymer, poly(p-phenylene vinylene (PPV, in the preparation of a stable thin film via the LbL method. Cyclic voltammetry and electrochemical impedance spectroscopy have been used to characterize the ionic conductivity of the PPV multilayer films. The ionic conductivity of the films has been found to be dependent on the polymerization temperature. The film conductivity can be fitted to a modified Randle’s circuit. The circuit equivalent calculations are performed to provide the diffusion coefficient values.

  12. Hydrogen behavior in nanocrystalline titanium thin films

    International Nuclear Information System (INIS)

    Nanocrystalline titanium films of different thicknesses, sputtered on sapphire substrates, were charged electrochemically with hydrogen. Hydrogen absorption and the thermodynamics of the nanocrystalline Ti-H thin film system were studied using electromotive force (EMF) measurements. The phase boundaries obtained from the EMF-pressure-concentration curves were confirmed by X-ray diffraction, complemented by in situ stress measurements during hydrogen charging. The change in the stress increase with hydrogen concentration was found to be in good agreement with the obtained phase boundaries. In comparison to bulk Ti-H system, considerable changes, such as shifted phase boundaries, and narrowed and sloped miscibility gaps, were observed in Ti-H thin films. These changes vary among the films of different crystalline orientation and are attributed to both microstructural effects and stress contributions. The influence of the initial crystallographic growth orientation of Ti films on the measured thermodynamic isotherms, phase transitions and stress development is discussed in detail.

  13. Thermal conductivity of nanoscale thin nickel films

    Institute of Scientific and Technical Information of China (English)

    YUAN Shiping; JIANG Peixue

    2005-01-01

    The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T = 300 K, which is lower than the Debye temperature ()D = 450 K,the results show that in a film thickness range of about 1-11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.

  14. Critical behavior of ferromagnetic Ising thin films

    International Nuclear Information System (INIS)

    In the present work, we study the magnetic properties and critical behavior of simple cubic ferromagnetic thin films. We simulate LxLxd films with semifree boundary conditions on the basis of the Monte Carlo method and the Ising model with nearest neighbor interactions. A Metropolis dynamics was implemented to carry out the energy minimization process. For different film thickness, in the nanometer range, we compute the temperature dependence of the magnetization, the magnetic susceptibility and the fourth order Binder's cumulant. Bulk and surface contributions of these quantities are computed in a differentiated fashion. Additionally, according to finite size scaling theory, we estimate the critical exponents for the correlation length, magnetic susceptibility, and magnetization. Results reveal a strong dependence of critical temperature and critical exponents on the film thickness. The obtained critical exponents are finally compared to those reported in literature for thin films

  15. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    The normal component of thin-film thermal conductivity has been measured for the first time, to the best of our knowledge, for several advanced sputtered optical materials. Included are data for single layers of boron nitride, silicon aluminum nitride, silicon aluminum oxynitride, silicon carbide, and for dielectric-enhanced metal reflectors of the form Al(SiO2/Si3N4)n and Al(Al2O3/AlN)n. Sputtered films of more conventional materials such as SiO2, Al2O3, Ta2O5, Ti, and Si have also been measured. The data show that thin-film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film--substrate interface contribution is presented

  16. Surface morphology of thin films polyoxadiazoles

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2011-12-01

    Full Text Available urpose: The purpose of this paper was to analyse the surface morphology of thin films polyoxadiazoles. Design/methodology/approach: SSix different polymers which belong to the group of polyoxadiazoles were dissolved in the solvent NMP. Each of these polymer was deposited on a glass substrate and a spin coating method was applied with a spin speed of 1000, 2000 and 3000 rev/min. Changes in surface topography and roughness were observed. An atomic force microscope AFM Park System has been used. Photos have been taken in noncontact mode while observing an area of 10 x 10 microns.Findings: The analysis of images has confirmed that the quality of thin films depends upon the used polymers. It was also observed that the parameters of the spin coating method have significant effect on the morphology and the surface roughness. The speed of the spin has got a strong impact on the topography of the thin films obtained.Research limitations/implications: The morphology of polyoxadiazoles thin films has been described. This paper include description how the spin speed influences the morphology of polymer thin films. In order to use a polymer thin film in photovoltaics or optoelectronics it must have a uniform thickness and a low surface roughness. Further research, in which the optical properties of thin films are investigated, is strongly recommended.Practical implications: Conductive polymers may find applications in photovoltaics or optoelectronics. It is important to study this group of material engineering and to find a new use for them. Materials from which thin films are made of will have an impact on the properties and characteristics of electronics devices in which they are be applied.Originality/value: The value of this paper is defining the optimal parameters of spin-coating technology for six polyoxadiazoles. The results allow the choosing optimal parameters of the deposition process. Spin coating is a very good method to obtain thin films which

  17. Thin Films in the Photovoltaic Industry

    International Nuclear Information System (INIS)

    In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

  18. Fabrication and characterization of Ag/polymer nanocomposite films through layer-by-layer self-assembly technique

    International Nuclear Information System (INIS)

    Multilayer nanocomposite films composed of negative charged Ag nanosized particles and cationic polyallylamine hydrochloride (PAH) molecules were fabricated on polymer modified single-crystal silicon and flat glass slides by a layer-by-layer (LBL) molecular self-assembly technique. The X-ray photoelectron spectroscopy analysis showed that the formed Ag particles successfully absorbed onto the positively charged surfaces. The atomic force microscopy image of a two-cycle Ag/PAH bilayer film showed that no surface damage or defects existed on the thin-films surface. The Ag particles were densely and homogeneously distributed on the surface and relatively uniform in size. Goniometry was employed to verify the assembly process and the water contact angles oscillated regularly, depending on the composition of the outermost layer. By using the LBL deposition technique, a molecular-level ordered multilayer film with the thickness up to 40 layers (20 bilayers) was obtained. Results from UV-vis spectroscopy and ellipsometry measurements revealed that the self-assembly of the Ag/PAH multilayer film was well quantitative and reproducible. Thus we can conclude that the consecutive LBL deposition technique is a feasible and effective way to produce multilayer film and control the surface properties

  19. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  20. Measuring thin films by transmission spectroscopy

    International Nuclear Information System (INIS)

    Full text: The refractive index, extinction coefficient and thickness of thin dielectric films are important parameters for device manufacturers and experimenters. We have developed a method which allows these values to be determined from a single transmission spectrum of the film as deposited on a known substrate. The technique exploits the interference fringes seen in such a transmission spectrum to establish envelope functions of the turning points in the spectrum. From these envelope functions the refractive index and extinction coefficient of the film is determined at each turning point. Consequently we can determine the film's thickness with a single measurement step. Copyright (2005) Australian Institute of Physics

  1. Molecular dynamics simulation of thin film interfacial strength dependency on lattice mismatch

    International Nuclear Information System (INIS)

    Laser-induced thin film spallation experiments have been previously developed to characterize the intrinsic interfacial strength of thin films. In order to gain insights of atomic level thin film debonding processes and the interfacial strength dependence on film/substrate lattice structures, in this study, molecular dynamics simulations of thin film interfacial failure under laser-induced stress waves were performed. Various loading amplitudes and pulse durations were employed to identify the optimum simulation condition. Stress propagation as a function of time was revealed in conjunction with the interface structures. Parametric studies confirmed that while the interfacial strength between a thin film and a substrate does not depend on the film thickness and the duration of the laser pulse, a thicker film and a shorter duration do provide advantage to effectively load the interface to failure. With the optimized simulation condition, further studies were focused on bulk Au/Au bi-crystals with mismatched orientations, and Ni/Al, Cu/Al, Cu/Ag and Cu/Au bi-crystals with mismatched lattices. The interfacial strength was found to decrease with increasing orientation mismatch and lattice mismatch but more significantly dominated by the bonding elements' atomic structure and valence electron occupancy. - Highlights: • Molecular dynamics simulation was done on stress wave induced thin film spallation. • Atomic structure was found to be a primary strength determining factor. • Lattice mismatch was found to be a secondary strength determining factor

  2. Thermal conductivity of dielectric thin films

    International Nuclear Information System (INIS)

    A direct reading thermal comparator has been used to measure the thermal conductivity of dielectric thin film coatings. In the past, the thermal comparator has been used extensively to measure the thermal conductivity of bulk solids, liquids, and gases. The technique has been extended to thin film materials by making experimental improvements and by the application of an analytical heat flow model. Our technique also allows an estimation of the thermal resistance of the film/substrate interface which is shown to depend on the method of film deposition. The thermal conductivity of most thin films was found to be several orders of magnitude lower than that of the material in bulk form. This difference is attributed to structural disorder of materials deposited in thin film form. The experimentation to date has centered primarily on optical coating materials. These coatings, used to enhance the optical properties of components such as lenses and mirrors, are damaged by thermal loads applied in high-power laser applications. It has been widely postulated that there may be a correlation between the thermal conductivity and the damage threshold of these materials. 31 refs., 11 figs., 8 tabs

  3. Evidence for improvement of critical current by Ag in YBaCuO-Ag thick films

    Energy Technology Data Exchange (ETDEWEB)

    Dwir, B.; Kellett, B.; Mieville, L.; Pavuna, D. (Institute of Micro- and Opto-electronics, Department of Physics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland (CH))

    1991-04-15

    The evidence is reported for enhancement of critical current density {ital J}{sub {ital c}} in YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thick films with the addition of Ag, which is correlated with improvements in structural properties. An improvement of 50% in {ital J}{sub {ital c}} (up to {similar to}500 A/cm{sup 2} at {ital T}=4.2 K) was obtained in films made from YBCO+60wt % Ag powder, fabricated by the spin-on technique on (100) SrTiO{sub 3}, which is correlated with improvements in structure. The resulting films are 10 {mu}m thick, uniform, partially textured, and show good adherence. The critical temperature {ital T}{sub {ital c}} is improved by the addition of Ag, and a reduction in the density of microcracks and in the amount of secondary phases in the sintered films was observed. Normal-state resistivity is reduced by almost three orders of magnitude, making these films potentially useful for electronic applications in interconnects and novel hybrid circuits.

  4. Evidence for improvement of critical current by Ag in YBaCuO-Ag thick films

    Science.gov (United States)

    Dwir, B.; Kellett, B.; Mieville, L.; Pavuna, D.

    1991-04-01

    The evidence is reported for enhancement of critical current density J(c) in YBa2Cu3O(7-delta) thick films with the addition of Ag, which is correlated with improvements in structural properties. An improvement of 50 percent in J(c) (up to about 500 A/sq cm at T = 4.2 K) was obtained in films made from YBCO + 60 wt pct Ag powder, fabricated by the spin-on technique on (100) SrTiO3, which is correlated with improvements in structure. The resulting films are 10 microns thick, uniform, partially textured, and show good adherence. The critical temperature Tc is improved by the addition of Ag, and a reduction in the density of microcracks and in the amount of secondary phases in the sintered films was observed. Normal-state resistivity is reduced by almost three orders of magnitude, making these films potentially useful for electronic applications in interconnects and novel hybrid circuits.

  5. Microwave surface resistance of superconducting YBa2Cu3O7-δ thin films

    International Nuclear Information System (INIS)

    One of the serious material problems with high Tc superconductors is their granularity which greatly affects their microwave transmission (as well as absorption) properties. High quality near-epitaxial thin films of these oxide superconductors have been found to be advantageous for microwave devices due to their low conduction loss. Pulsed laser ablation deposition (PLAD) technique has been extensively used for the growth of high quality films of oxide superconductors. Work carried out at TIFR during the last several years has convincingly shown that significant improvement in microstructure, and consequently, in microwave transmission properties of YBa2Cu3O7-Δ(YBCO) thin films can be realised by incorporating a small quantity (about 5%) of Ag in the YBCO target used for PLAD. Microwave surface resistance of YBCO films has been measured using microstrip resonator configuration at various temperatures in the range 15-88K and in the frequency range 1.5 to 12 GHz. Due to the much improved microstructure, Ag-YBCO films have not only shown a low surface resistance but also a good power handling capability. Au-YBCO films too have shown improved properties with the added advantage of much improved environmental stability. This paper reviews significant advances in the growth and microwave measurements of Ag-YBCO and Au-YBCO thin films and show why they would be of great advantage for microwave passive devices operating at 77K. (author)

  6. Microwave transmission in superconducting YBa2Cu3O7-δ thin films

    International Nuclear Information System (INIS)

    One of the serious material problems with high Tc superconductors is their granularity which affects their microwave transmission (as well as absorption) properties. High quality near epitaxial thin films of these oxide superconductors have been found to be advantageous for microwave devices due to their low conduction loss. Pulsed laser ablation deposition (PLAD) technique has been extensively used for the growth of high quality films of oxide superconductors. Work carried out at TIFR during the last several years has convincingly shown that significant improvement in microstructure and consequently, in microwave transmission properties of YBa2Cu3O7-δ (YBCO) thin films can be realised by incorporating a small quantity (about 5%) of Ag in the YBCO target used for PLAD. Microwave surface resistance of YBCO films has been measured using microstrip resonator configuration at various temperatures in the range 15-88K and in the frequency range 1.5 to 12 GHz. Due to the much improved microstructure, Ag-YBCO films have not only shown a low surface resistance but also a good power handling capability. Au-YBCO films too have shown improved properties with the added advantage of much improved environmental stability. This paper would review significant advances in the growth and microwave measurements of Ag-YBCO and Au-YBCO thin films and show why they would be of great advantage for microwave passive devices operating at 77K. (author)

  7. Organic thin films and surfaces directions for the nineties

    CERN Document Server

    Ulman, Abraham

    1995-01-01

    Physics of Thin Films has been one of the longest running continuing series in thin film science consisting of 20 volumes since 1963. The series contains some of the highest quality studies of the properties ofvarious thin films materials and systems.In order to be able to reflect the development of todays science and to cover all modern aspects of thin films, the series, beginning with Volume 20, will move beyond the basic physics of thin films. It will address the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Ther

  8. Evolution of surface morphology of NiO thin films under swift heavy ion irradiation

    International Nuclear Information System (INIS)

    NiO nanoparticle thin films grown on Si substrates were irradiated by 107 MeV Ag8+ ions. The films were characterized by glancing angle X-ray diffraction and atomic force microscopy. Ag ion irradiation was found to influence the shape and size of the nanoparticles. The pristine NiO film consisted of uniform size (∼100 nm along major axis and ∼55 nm along minor axis) elliptical particles, which changed to also of uniform size (∼63 nm) circular shape particles on irradiation at a fluence of 3 x 1013 ions cm-2. Comparison of XRD line width analysis and AFM data revealed that the particles in the pristine films are single crystalline, which turn to polycrystalline on irradiation with 107 MeV Ag ions.

  9. Examination of interfacial charge transfer in photocatalysis using patterned CuO thin film deposited on TiO2

    OpenAIRE

    Osako, K; Matsuzaki, K.; Hosono, H.; G. Yin; D. Atarashi; Sakai, E.; Susaki, T.; Miyauchi, M

    2015-01-01

    We examined the interfacial charge transfer effect on photocatalysts using a patterned CuO thin film deposited on a rutile TiO2 (110) substrate. Photocatalytic activity was visualized based on the formation of metal Ag particles resulting from the photoreduction of Ag+ ions under visible-light illumination. Ag particles were selectively deposited near the edge of CuO film for several nanometer thick CuO film, indicating that interfacial excitation from the valence band maximum of TiO2 to the ...

  10. Microstructure and Raman spectra of Ag-MgF2 cermet films

    Institute of Scientific and Technical Information of China (English)

    Shouhua Shi(史守华); Zhuoliang Cao(曹卓良); Zhaoqi Sun(孙兆奇)

    2003-01-01

    Ag-MgF2 cermet films with different Ag fractions were prepared by vacuum evaporation. The microstruc-ture of the films was examined by Raman scattering technique. The surface-enhanced Raman spectrumfor MgF2 molecules in the cermet film strongly suggests the existence of Ag nanoparticles dispersed inMgF2 matrix. The intensities of the Raman spectra of Ag-MgF2 cermet films increase with Ag fraction.The enhancement of Raman scattering disappears when Ag content reaches wt.20%. The analyses withthe transmission electron microscopy showed that Ag-MgF2 cermet films are mainly composed of amor-phous MgF2 matrix with embedded faced-center-cubic Ag nanoparticles. It suggests that the percolationthreshold should be around wt.20% of Ag content.

  11. Electrical properties of thin-film structures formed by pulsed laser deposition of Au, Ag, Cu, Pd, Pt, W, Zr metals on n-6H-SiC crystal

    International Nuclear Information System (INIS)

    Diode structures with ideality factors of 1.28-2.14 and potential barriers from 0.58 to 0.62 eV on the semiconductor side were formed by pulsed laser deposition of Au, Ag, Cu, Pd, Pt, W, and Zr metal films on n-6H-SiC crystal without epitaxial layer preparation. A high density of surface acceptor and donor states was formed at the metal-semiconductor interface during deposition of the laser-induced atomic flux, which violated the correlation between the potential barrier height and metal work function. The barrier heights determined from characteristic currents and capacitance measurements were in quite good agreement. For the used low-resistance semiconductor and contact elements, the sizes of majority carrier (electron) depletion regions were determined as 26-60 nm.

  12. Crystallization of zirconia based thin films.

    Science.gov (United States)

    Stender, D; Frison, R; Conder, K; Rupp, J L M; Scherrer, B; Martynczuk, J M; Gauckler, L J; Schneider, C W; Lippert, T; Wokaun, A

    2015-07-28

    The crystallization kinetics of amorphous 3 and 8 mol% yttria stabilized zirconia (3YSZ and 8YSZ) thin films grown by pulsed laser deposition (PLD), spray pyrolysis and dc-magnetron sputtering are explored. The deposited films were heat treated up to 1000 °C ex situ and in situ in an X-ray diffractometer. A minimum temperature of 275 °C was determined at which as-deposited amorphous PLD grown 3YSZ films fully crystallize within five hours. Above 325 °C these films transform nearly instantaneously with a high degree of micro-strain when crystallized below 500 °C. In these films the t'' phase crystallizes which transforms at T > 600 °C to the t' phase upon relaxation of the micro-strain. Furthermore, the crystallization of 8YSZ thin films grown by PLD, spray pyrolysis and dc-sputtering are characterized by in situ XRD measurements. At a constant heating rate of 2.4 K min(-1) crystallization is accomplished after reaching 800 °C, while PLD grown thin films were completely crystallized already at ca. 300 °C. PMID:26119755

  13. Solid surfaces, interfaces and thin films

    CERN Document Server

    Lüth, Hans

    2015-01-01

    This book emphasises both experimental and theoretical aspects of surface, interface and thin-film physics. As in previous editions the preparation of surfaces and thin films, their atomic and morphological structure, their vibronic and electronic properties as well as fundamentals of adsorption are treated. Because of their importance in modern information technology and nanostructure research, particular emphasis is paid to electronic surface and interface states, semiconductor space charge layers and heterostructures. A special chapter of the book is devoted to collective phenomena at interfaces and in thin films such as superconductivity and magnetism. The latter topic includes the meanwhile important issues giant magnetoresistance and spin-transfer torque mechanism, both effects being of high interest in information technology. In this new edition, for the first time, the effect of spin-orbit coupling on surface states is treated. In this context the class of the recently detected topological insulators,...

  14. Method for synthesizing thin film electrodes

    Science.gov (United States)

    Boyle, Timothy J.

    2007-03-13

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  15. Thin Film Photovoltaic/Thermal Solar Panels

    Institute of Scientific and Technical Information of China (English)

    David JOHNSTON

    2008-01-01

    A solar panel is described.in which thin films of semiconductor are deposited onto a metal substrate.The semiconductor-metal combination forms a thin film photovoltaic cell,and also acts as a reflector,absorber tandem, which acts as a solar selective surface,thus enhancing the solar thermal performance of the collector plate.The use of thin films reduces the distance heat is required to flow from the absorbing surface to the metal plate and heat exchange conduits.Computer modelling demonstrated that,by suitable choice of materials,photovohaic efficiency call be maintained,with thermal performance slishtly reduced,compared to that for thermal-only panels.By grading the absorber layer-to reduce the band gap in the lower region-the thermal performance can be improved,approaching that for a thermal-only solar panel.

  16. Thin-film solar cells. Duennschichtsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Bloss, W.H.; Pfisterer, F.; Schock, H.W. (Stuttgart Univ. (Germany, F.R.). Inst. fuer Physikalische Elektronik)

    1990-01-01

    The authors present the state of the art in research and development, technology, production and marketing, and of the prospects of thin-film solar cells. Thin-film solar cells most used at present are based on amorphous silicon and on the compound semiconductors CuInSe{sub 2} and CdTe. Efficiencies in excess 12% have been achieved (14.1% with CuInSe{sub 2}). Stability is the main problem with amorphous silicon. Thin-film solar cells made from compound semiconductors do not have this problem, though their cost-effective series production needs to be shown still. The development potential of the three types mentioned will be ca. 30% in terms of efficiency: in terms of production cost, it is estimated with some certainty to be able to reach the baseline of 1 DM/Watt peak output (W{sub p}). (orig.).

  17. Multifractal characteristics of titanium nitride thin films

    Directory of Open Access Journals (Sweden)

    Ţălu Ştefan

    2015-09-01

    Full Text Available The study presents a multi-scale microstructural characterization of three-dimensional (3-D micro-textured surface of titanium nitride (TiN thin films prepared by reactive DC magnetron sputtering in correlation with substrate temperature variation. Topographical characterization of the surfaces, obtained by atomic force microscopy (AFM analysis, was realized by an innovative multifractal method which may be applied for AFM data. The surface micromorphology demonstrates that the multifractal geometry of TiN thin films can be characterized at nanometer scale by the generalized dimensions Dq and the singularity spectrum f(α. Furthermore, to improve the 3-D surface characterization according with ISO 25178-2:2012, the most relevant 3-D surface roughness parameters were calculated. To quantify the 3-D nanostructure surface of TiN thin films a multifractal approach was developed and validated, which can be used for the characterization of topographical changes due to the substrate temperature variation.

  18. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.

  19. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  20. Vibration welding system with thin film sensor

    Science.gov (United States)

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  1. Synthesis of silver nanoparticles by chemical reduction method and its metal induced crystallization of poly-Si thin film application

    International Nuclear Information System (INIS)

    Metal induced crystallization (MIC) can be generated by using a silver nanoparticles (AgNPs) solution spin coated on amorphous silicon (a-Si) film, and annealing the sample in a furnace under vacuum. Because nanoscale metal has a large specific surface area, its catalytic effect is enhanced, resulting in a low processing temperature. Thus, a poly-Si thin film with a high crystalline fraction can be obtained by using AgNPs induced crystallization. In this study, the size and annealing time of AgNPs are discussed. According to the results, the grain size of the poly-Si thin film produced using AgNPs induced crystallization was more uniform than that of the film obtained by employing traditional thermally evaporated Ag induced crystallization. Smaller AgNPs size and long annealing time enhance the crystallization of poly-Si thin film. Applying an annealing temperature of 550 °C for 480 min with 10 nm of AgNPs yielded a crystalline fraction of 75%. (paper)

  2. Characterization of AZO and Ag based films prepared by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Miao, Dagang [Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong (China); Jiang, Shouxiang, E-mail: kinor.j@polyu.edu.hk [Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong (China); Zhao, Hongmei [Department of Prosthodontics, The Affiliated Hospital of Qingdao University, Qingdao (China); Shang, Songmin; Chen, Zhuoming [Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong (China)

    2014-12-15

    Highlights: • Highly infrared reflective AZO and Ag based films were prepared. • Ag showed better crystallization on AZO film than on glass substrate. • Infrared reflection rate was inversely proportional to the film sheet resistance. • Film with infrared reflection of 97% in FIR region was acquired. - Abstract: Ag, AZO/Ag, Ag/AZO and AZO/Ag/AZO films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technology. The prepared films were systematically investigated by X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), UV–visible spectrophotometer, a four-point probe system and Fourier Transform Infrared Spectroscopy. The results indicated that Ag inner layer starts forming a continuous film at the thickness of 10 nm and Ag layer presents superior crystallization on AZO substrate than that on glass substrate. The continuous Ag inner layer film provided the highest average visible transmittance of 85.4% (AZO/Ag/AZO). The lowest sheet resistance of 3.21 Ω/sq and the highest infrared reflection rate of 97% in FIR region can be obtained on AZO/Ag (15 nm)/AZO film. The high infrared reflection property of the AZO/Ag/AZO coating makes it a promising candidate for solar control films.

  3. Characterization of AZO and Ag based films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Highlights: • Highly infrared reflective AZO and Ag based films were prepared. • Ag showed better crystallization on AZO film than on glass substrate. • Infrared reflection rate was inversely proportional to the film sheet resistance. • Film with infrared reflection of 97% in FIR region was acquired. - Abstract: Ag, AZO/Ag, Ag/AZO and AZO/Ag/AZO films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technology. The prepared films were systematically investigated by X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), UV–visible spectrophotometer, a four-point probe system and Fourier Transform Infrared Spectroscopy. The results indicated that Ag inner layer starts forming a continuous film at the thickness of 10 nm and Ag layer presents superior crystallization on AZO substrate than that on glass substrate. The continuous Ag inner layer film provided the highest average visible transmittance of 85.4% (AZO/Ag/AZO). The lowest sheet resistance of 3.21 Ω/sq and the highest infrared reflection rate of 97% in FIR region can be obtained on AZO/Ag (15 nm)/AZO film. The high infrared reflection property of the AZO/Ag/AZO coating makes it a promising candidate for solar control films

  4. Improved Resistive Switching Characteristics of Ag-Doped ZrO2 Films Fabricated by Sol-Gel Process

    Institute of Scientific and Technical Information of China (English)

    SUN Bing; LIU Li-Feng; HAN De-Dong; WANG Yi; LIU Xiao-Yan; HAN Ru-Qi; KANG Jin-Feng

    2008-01-01

    Ag-doped and pure ZrO2 thin films are prepared on Pt/Ti/SiO2/Si substrates by sol-gel process for resistive random access memory application. The highly reproducible resistive switching is achieved in the 10% Ag-doped ZrO2 devices. The improved resistive switching behaviour in the Ag doped ZrO2 devices could be attributed to Ag doping effect on the formation of the stable filamentary conducting paths. In addition, dual-step reset processes corresponding to three stable resistance states are observed in the 10% Ag doped ZrO2 devices, which may be implemented for the application of multi-bit storage.

  5. Magnetically actuated peel test for thin films

    International Nuclear Information System (INIS)

    Delamination along thin film interfaces is a prevalent failure mechanism in microelectronic, photonic, microelectromechanical systems, and other engineering applications. Current interfacial fracture test techniques specific to thin films are limited by either sophisticated mechanical fixturing, physical contact near the crack tip, or complicated stress fields. Moreover, these techniques are generally not suitable for investigating fatigue crack propagation under cyclical loading. Thus, a fixtureless and noncontact experimental test technique with potential for fatigue loading is proposed and implemented to study interfacial fracture toughness for thin film systems. The proposed test incorporates permanent magnets surface mounted onto micro-fabricated released thin film structures. An applied external magnetic field induces noncontact loading to initiate delamination along the interface between the thin film and underlying substrate. Characterization of the critical peel force and peel angle is accomplished through in situ deflection measurements, from which the fracture toughness can be inferred. The test method was used to obtain interfacial fracture strength of 0.8-1.9 J/m2 for 1.5-1.7 μm electroplated copper on natively oxidized silicon substrates. - Highlights: ► Non-contact magnetic actuation test for interfacial fracture characterization. ► Applied load is determined through voltage applied to the driving electromagnet. ► Displacement and delamination propagation is measured using an optical profiler. ► Critical peel force and peel angle is measured for electroplated Cu thin-film on Si. ► The measured interfacial fracture energy of Cu/Si interface is 0.8-1.9 J/m2.

  6. Tailoring electronic structure of polyazomethines thin films

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2010-09-01

    Full Text Available Purpose: The aim of this work is to show how electronic properties of polyazomethine thin films deposited by chemical vapor deposition method (CVD can be tailored by manipulating technological parameters of pristine films preparation as well as modifying them while the as-prepared films put into iodine atmosphere.Design/methodology/approach: The recent achievements in the field of designing and preparation methods to be used while preparing polymer photovoltaic solar cells or optoelectronic devices.Findings: The method used allow for pure pristine polymer thin films to be prtepared without any unintentional doping taking place during prepoaration methods. This is a method based on polycondensation process, where polymer chain developing is running directly due to chemical reaction between molecules of bifunctional monomers. The method applied to prepare thin films of polyazomethines takes advantage of monomer transporting by mreans of neutral transport agent as pure argon is.Research limitations/implications: The main disadvantage of alternately conjugated polymers seems to be quite low mobility of charge carrier that is expected to be a consequence of their backbone being built up of sp2 hybridized carbon and nitrogen atoms. Varying technological conditions towards increasing reagents mass transport to the substrate is expected to give such polyazomethine thin films organization that phenylene rin stacking can result in special π electron systems rather than linear ones as it is the case.Originality/value: Our results supply with original possibilities which can be useful in ooking for good polymer materials for optoelectronic and photovoltaic applications. These results have been gained on polyazomethine thin films but their being isoelectronic counterpart to widely used poly p-phenylene vinylene may be very convenient to develop high efficiency polymer solar cells

  7. Bilaterally Microstructured Thin Polydimethylsiloxane Film Production

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Yu, Liyun; Hassouneh, Suzan Sager;

    2015-01-01

    Thin PDMS films with complex microstructures are used in the manufacturing of dielectric electro active polymer (DEAP) actuators, sensors and generators, to protect the metal electrode from large strains and to assure controlled actuation. The current manufacturing process at Danfoss Polypower A...... with the existing manufacturing process. In employing the new technique, films with microstructures on both surfaces are successfully made with two different liquid silicone rubber (LSR) formulations: 1) pure XLR630 and 2) XLR630 with titanium dioxide (TiO2). The LSR films (∼70 μm) are cast on a....../S produces films with a one-sided microstructured surface only. It would be advantageous to produce a film with both surfaces microstructured, as this increases the film’s performance efficiency. The new technique introduced herein produces bilaterally microstructured film by combining an embossing method...

  8. Thin film oxygen partial pressure sensor

    Science.gov (United States)

    Wortman, J. J.; Harrison, J. W.; Honbarrier, H. L.; Yen, J.

    1972-01-01

    The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.

  9. Solid-state thin-film supercapacitor with ruthenium oxide and solid electrolyte thin films

    Science.gov (United States)

    Yoon, Y. S.; Cho, W. I.; Lim, J. H.; Choi, D. J.

    Direct current reactive sputtering deposition of ruthenium oxide thin films (bottom and top electrodes) at 400°C are performed to produce a solid-state thin-film supercapacitor (TFSC). The supercapacitor has a cell structure of RuO 2/Li 2.94PO 2.37N 0.75 (Lipon)/RuO 2/Pt. Radio frequency, reactive sputtering deposition of an Li 2.94PO 2.37N 0.75 electrolyte film is performed on the bottom RuO 2 film at room temperature to separate the bottom and top RuO 2 electrodes electrically. The stoichiometry of the RuO 2 thin film is investigated by Rutherford back-scattering spectrometry (RBS). X-ray diffraction (XRD) shows that the as-deposited RuO 2 thin film is an amorphous phase. Scanning electron microscopy (SEM) measurements reveal that the RuO 2/Lipon/RuO 2 hetero-interfaces have no inter-diffusion problems. Charge-discharge measurements with constant current at room temperature clearly reveal typical supercapacitor behaviour for a RuO 2/Lipon/RuO 2/Pt cell structure. Since the electrolyte thin film has low ionic mobility, the capacity and cycle performance are inferior to those of a bulk type of supercapacitor. These results indicate that a high performance, TFSC can be fabricated by a solid electrolyte thin film with high ionic conductivity.

  10. Functional planar thin film optical waveguide lasers

    International Nuclear Information System (INIS)

    Fabrication and characterization of planar and channel waveguiding thin films with the goal to develop active and passive elements are intensively studied over the last 20 years. Large scale of materials and properties were tested (morphology, crystallinity, luminescence, waveguiding, etc.). The goal of our contribution is to give an overview of materials and fabrication processes which were used for development and construction of functional planar waveguide lasers (PWL). The compact survey of finalized PWL and their basic parameters is given. A special part is devoted to fabrication of waveguide lasers using laser technology. Applications of thin film waveguide lasers are mentioned

  11. Advances in thin-film solar cells

    CERN Document Server

    Dharmadasa, I M

    2012-01-01

    This book concentrates on the latest developments in our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. It extends these new findings to CIGS thin-film solar cells and presents a new device design based on graded bandgap multilayer solar cells. This design has been experimentally tested using the well-researched GaAs/AlGaAs system and initial devices have shown impressive device parameters. These devices are capable of absorbing all radiation (UV, visible, and infra-red) within the solar spectrum and combines

  12. Thin Films Made Fast and Modified Fast

    International Nuclear Information System (INIS)

    Thin films are playing a more and more important role for technological applications and there are many aspects of materials surface processing and thin film production, ranging from simple heat treatments to ion implantation or laser surface treatments. These methods are often very complicated, involving many basic processes and they have to be optimized for the desired application. Nuclear methods, especially Moessbauer spectroscopy, can be successfully applied for this task and some examples will be presented for laser-beam and ion-beam based processes.

  13. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.;

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity and...... strain sensitivity using two- and four-point measurement method. We have found that polyaniline has a negative gauge factor of K = -4.9, which makes it a candidate for piezoresistive read-out in polymer based MEMS-devices. (C) 2007 Elsevier B.V. All rights reserved....

  14. Electrical analysis of niobium oxide thin films

    International Nuclear Information System (INIS)

    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O2 was kept constant at 1 Pa, while the O2 partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb2O5 stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O2). • Raman showed that increasing P(O2), Nb2O5 amorphous increases. • Conductivity tends to decrease with the increase of P(O2). • Dielectric analysis indicates the inexistence of preferential grow direction

  15. Pulsed-laser-induced nanoscale island formation in thin metal-on-oxide films

    OpenAIRE

    Henley, SJ; Carey, JD; Silva, SRP

    2005-01-01

    he mechanisms controlling the nanostructuring of thin metal-on-oxide films by nanosecond pulsed excimer lasers are investigated. When permitted by the interfacial energetics, the breakup of the metal film into nanoscale islands is observed. A range of metals (Au, Ag, Mo, Ni, Ti, and Zn) with differing physical and thermodynamic properties, and differing tendencies for oxide formation, are investigated. The nature of the interfacial metal-substrate interaction, the thermal conductivity of the ...

  16. Perovskite Thin Films via Atomic Layer Deposition

    KAUST Repository

    Sutherland, Brandon R.

    2014-10-30

    © 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

  17. Dynamics of liquid films and thin jets

    Science.gov (United States)

    Zak, M.

    1979-01-01

    The theory of liquid films and thin jets as one- and two-dimensional continuums is examined. The equations of motion have led to solutions for the characteristic speeds of wave propagation for the parameters characterizing the shape. The formal analogy with a compressible fluid indicates the possibility of shock wave generation in films and jets and the formal analogy to the theory of threads and membranes leads to the discovery of some new dynamic effects. The theory is illustrated by examples.

  18. Viscous fingering in volatile thin films

    OpenAIRE

    Agam, Oded

    2008-01-01

    A thin water film on a cleaved mica substrate undergoes a first order phase transition between two values of film thickness. By inducing a finite evaporation rate of the water, the interface between the two phases develops a fingering instability similar to that observed in the Saffman-Taylor problem. We draw the connection between the two problems, and construct solutions describing the dynamics of evaporation in this system.

  19. Thin film dynamics with surfactant phase transition

    OpenAIRE

    Köpf, M. H.; Gurevich, S. V.; Friedrich, R.

    2009-01-01

    A thin liquid film covered with an insoluble surfactant in the vicinity of a first-order phase transition is discussed. Within the lubrication approximation we derive two coupled equations to describe the height profile of the film and the surfactant density. Thermodynamics of the surfactant is incorporated via a Cahn-Hilliard type free-energy functional which can be chosen to describe a transition between two stable phases of different surfactant density. Within this model, a linear stabilit...

  20. Assessment of adhesion between thin film and silicon based on a scratch test

    International Nuclear Information System (INIS)

    Thin film coatings are commonly utilized to prevent wear, modify surface properties, and manipulate the frictional behavior of various mechanical systems. The behavior of a coating has a direct effect on the life as well as performance of the system. However, the coating itself is subject to damage, and the quality of the coating is related to the adhesion characteristics between the coating and the substrate. Therefore, a quantitative assessment of the adhesion properties of thin film is important to guarantee the reliability of not only the thin film but also the mechanical system. In this study, ramp loading scratch tests were performed to assess the adhesion characteristics of Ag and ZnO thin films coated on a silicon wafer. Silver thin film, deposited by sputtering, and ZnO thin film, fabricated by a sol-gel method, were used as scratch specimens. Scratch tests using a diamond tip were performed with a continuously increasing normal force. During the scratch test, the normal and frictional forces were monitored to assess the integrity of the film. The Benjamin and Weaver model commonly used for obtaining the horizontal force during the scratching of films coated on a substrate showed large discrepancies with the experimental results. In this work, the model was modified with a plowing term to minimize the difference between the experimental and theoretical results. Using the modified model, the experimental results could be predicted with an accuracy of about 10%

  1. Effects of {gamma}-irradiation on the optical properties of a-(Sb{sub 0.1}Ge{sub 0.3}Se{sub 0.6}) and Ag{sub 5}(Sb{sub 0.1}Ge{sub 0.3}Se{sub 0.6}){sub 95} thin film material

    Energy Technology Data Exchange (ETDEWEB)

    Salem, A.M. [Electron Microscopy and Thin Film Department, National Research Center, Dokki, Cairo (Egypt)], E-mail: Salemar55@hotmail.com; Marzouk, S.Y. [Electron Microscopy and Thin Film Department, National Research Center, Dokki, Cairo (Egypt); Moustafa, S.H. [Helwan University, Faculty of Science, Cairo (Egypt); Selim, M.S. [Electron Microscopy and Thin Film Department, National Research Center, Dokki, Cairo (Egypt)

    2007-09-15

    The amorphous behaviour of (Sb{sub 0.1}Ge{sub 0.3}Se{sub 0.6}) and Ag{sub 5}(Sb{sub 0.1}Ge{sub 0.3}Se{sub 0.6}){sub 95} chalcogenide thin film materials deposited at room temperature onto glass substrates by thermal evaporation process was investigated using X-ray diffraction technique. The surface morphology as well as the elemental chemical composition of the as-deposited films was investigated via scanning electron microscopy. The optical transmission and reflection spectra of as-deposited films and that exposed for different {gamma}-dose were recorded at room temperature in the wavelength range of 600-2500 nm. Systematic studies of the refractive index, extinction coefficient and optical band gap have been presented as a function of the {gamma}-dose. The dispersion of the refractive index for such films is discussed in terms of the single-oscillator Wemple-DiDomenico model, which was presented.

  2. Depositing Adherent Ag Films On Ti Films On Alumina

    Science.gov (United States)

    Honecy, Frank S.

    1995-01-01

    Report discusses cleaning of ceramic (principally, alumina) substrates in preparation for sputter deposition of titanium intermediate films on substrates followed by sputter deposition of outer silver films. Principal intended application, substrates sliding parts in advanced high-temperature heat engines, and outer silver films serve as solid lubricants: lubricating properties described in "Solid Lubricant for Alumina" (LEW-15495).

  3. Mechanical integrity of thin films

    International Nuclear Information System (INIS)

    Mechanical considerations starting with the initial film deposition including questions of adhesion and grading the interface are reviewed. Growth stresses, limiting thickness, stress relief, control aging, and creep are described

  4. Effect of a Magnetic Field on the Preparation of Silver Nanowires Using Solid Electrolyte Thin Films

    Institute of Scientific and Technical Information of China (English)

    Haifei YAO; Jialin SUN; Wei LIU; Hongsan SUN

    2007-01-01

    The effect of an external magnetic field on the preparation of silver nanowires was studied. The silver nanowires were synthesized using solid electrolyte RbAg4l5 thin films by applying both a direct current (DC) electric field and a magnetic field. The RbAg4l5 thin films, which were prepared by deposition at room temperature and atmospheric pressure on a NaCl substrate, were used for the transfer of Ag+ ions between two Ag electrodes during the preparation process. When only the DC electric field is applied, the silver ions migrate toward the cathode. On the edge of the silver film at the cathode the Ag+ ions congregate to form aligned nanowires. If the magnetic field is also applied perpendicular to the DC electric field, the morphology of the nanowires can be controlled by rotating the sample in the magnetic field. Experimental results show that the growth of the silver nanowires is determined by the Ag+ ionic flux.

  5. Highly flexible transparent thin film heaters based on silver nanowires and aluminum zinc oxides

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Hahn-Gil; Kim, Jin-Hoon; Song, Jun-Hyuk; Jeong, Unyong; Park, Jin-Woo, E-mail: jwpark09@yonsei.ac.kr

    2015-08-31

    In this work, we developed highly flexible transparent film heaters (f-TFHs) composed of Ag nanowire networks (AgNWs) and aluminum zinc oxide (AZO). Uniform AgNWs were roll-to-roll coated on polyethylene terephthalate (PET) substrates using the Mayer rod method, and AZO was sputter-deposited atop the AgNWs at room temperature. The sheet resistance (R{sub s}) and transparency (T{sub opt}) of the AZO-coated AgNWs changed only slightly compared with the uncoated AgNWs. AZO is thermally less conductive than the heat pipes, but increases the thermal efficiency of the heaters blocking the heat convection through the air. Based on Joule heating, a higher average film temperature (T{sub ave}) is attained at a fixed electric potential drop between electrodes (ϕ) as the R{sub s} of the film decreases. Our experimental results revealed that T{sub ave} of the hybrid f-TFH is higher than AgNWs when the ratio of the area coverage of AgNWs to AZO is over a certain value. When a ϕ as low as 3 V/cm was applied to 5 cm × 5 cm f-TFHs, the maximum temperature of the hybrid film was over 100 °C, which is greater than that of AgNWs by more than 30 °C. Furthermore, uniform heating throughout the surfaces is achieved in the hybrid films while heating begins in small areas where densities of the nanowires (NWs) are the highest in the bare network. The non-uniform heating decreases the lifetime of f-TFHs by forming hot spots. Cyclic bending test results indicated that the hybrid films were as flexible as the AgNWs, and the R{sub s} of the hybrid films changes only slightly until 5000 cycles. Combined with the high-throughput coating technology presented here, the hybrid films will provide a robust and scalable strategy for large-area f-TFHs with highly enhanced performance. - Highlights: • We developed highly efficient flexible thin film heaters based on Ag nanowires and AZO composites. • In the composite, AZO plays an important role as an insulation blanket to block heat loss to

  6. Selective Purcell enhancement of defect emission in ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Haglund, Jr, Richard F [ORNL

    2012-01-01

    A zinc interstitial defect present but unobservable in ZnO thin films annealed at 500 C in oxygen or in atmosphere was selectively detected by interaction of the film with an Ag surface-plasmon polariton. The time-dependent differential reflectivity of the ZnO near the ZnO/MgO interface exhibited a subpicosecond decay followed by a several nanosecond recovery, consistent with the Purcell-enhanced Zn interstitial luminescence seen in Ag-ZnO heterostructures. Heterostructures annealed at other temperatures showed significantly greater band-edge photoluminescence and no evidence of the Zn interstitial defect.

  7. Ultra-Thin Films of Poly(acrylic acid)/Silver Nanocomposite Coatings for Antimicrobial Applications

    OpenAIRE

    Alaa Fahmy; Eisa, Wael H.; Mohamed Yosef; Ali Hassan

    2016-01-01

    In this work not only colloids of poly(acrylic acid) (PAA) embedded with silver nanoparticles (Ag-NPs) but thin films (10 nm) also were deposited using electrospray deposition technique (ESD). A mixture of sodium borohydride (NaBH4) and ascorbic acid (AA) were utilized to reduce the silver ions to generate Ag-NPs in the PAA matrix. Moreover, sodium tricitrate was used to stabilize the prepared colloids. The obtained colloids and films were characterized using UV-visible, transmission electron...

  8. YBCO thin films in ac and dc films

    CERN Document Server

    Shahzada, S

    2001-01-01

    We report studies on the dc magnetization of YBCO thin films in simultaneously applied dc and ac fields. The effect of the ac fields is to decrease the irreversible magnetization drastically leading to complete collapse of the hysteresis loops for relatively small ac fields (250e). The magnitude of the decrease depends on the component of the ac field parallel to the c-axis. The decrease is non-linear with ac amplitude and is explained in the framework of the critical state response of ultra thin films in perpendicular geometry. The ac fields increase the relaxation rapidly at short times while the long time response appears unaffected. (author)

  9. Biaxial Fatigue Testing of Thin Films

    International Nuclear Information System (INIS)

    A new experimental setup, which allows for testing in an equi-biaxial loading condition, has been developed and applied to investigate the fatigue behaviour of thin films. A load controlled cycling, performed at room temperature on flat specimens, reproduces the strain amplitude and mean strain in the film corresponding to a thermal cycling in a given temperature range. The setup is based on the ring-on-ring test, which has been successfully used in biaxial fracture testing of glass and ceramics, and includes an optical in-situ failure detection system. The method is validated for specimens consisting in a gold film deposited on a polymer substrate

  10. Study of iron mononitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tayal, Akhil, E-mail: mgupta@csr.res.in; Gupta, Mukul, E-mail: mgupta@csr.res.in; Phase, D. M., E-mail: mgupta@csr.res.in; Reddy, V. R., E-mail: mgupta@csr.res.in; Gupta, Ajay, E-mail: mgupta@csr.res.in [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore,-452001 (India)

    2014-04-24

    In this work we have studied the crystal structural and local ordering of iron and nitrogen in iron mononitride thin films prepared using dc magnetron sputtering at sputtering power of 100W and 500W. The films were sputtered using pure nitrogen to enhance the reactivity of nitrogen with iron. The x-ray diffraction (XRD), conversion electron Mössbauer spectroscopy (CEMS) and soft x-ray absorption spectroscopy (SXAS) studies shows that the film crystallizes in ZnS-type crystal structure.

  11. Energetic Deposition of Niobium Thin Film in Vacuum

    OpenAIRE

    Wu, Genfa

    2002-01-01

    Niobium thin films are expected to be free of solid inclusions commonly seen in solid niobium. For particle accelerators, niobium thin film has the potential to replace the solid niobium in the making of the accelerating structures. In order to understand and improve the superconducting performance of niobium thin films at cryogenic temperature, an energetic vacuum deposition system has been developed to study deposition energy effects on the properties of niobium thin films on various substr...

  12. Fractal structure formation from Ag nanoparticle films on insulating substrates.

    Science.gov (United States)

    Tang, Jing; Li, Zhiyong; Xia, Qiangfei; Williams, R Stanley

    2009-07-01

    Two dimensional (2D) fractal structures were observed to form from fairly uniform Ag island films (equivalent mass thicknesses of 1.5 and 5 nm) on insulating silicon dioxide surfaces (thermally grown silicon oxide on Si or quartz) upon immersion in deionized water. This result is distinctly different from the previously observed three-dimensional (3D) growth of faceted Ag nanocrystals on conductive surfaces (ITO and graphite) as the result of an electrochemical Ostwald ripening process, which also occurs on native oxide covered silicon surfaces as reported here. The fractal structures formed by diffusion-limited aggregation (DLA) of Ag species on the insulating surfaces. We present the experimental observation of this phenomenon and discuss some possible mechanisms for the DLA formation. PMID:19496573

  13. Microwave studies on silver ion irradiated YBa2Cu3O7-δ thin film

    International Nuclear Information System (INIS)

    We have studied effect of 200 MeV107Ag14+ ion irradiation on a c-axis oriented thin film. Good quality YBa2Cu3O7-δ thin film grown by laser ablation was used for the present study. After irradiation this film showed non-zero resistance below transition temperature. It is also seen that the c-lattice parameter of the film has expanded to a value characteristic of tetragonal structure. Both these measurements indicate a loss of superconductivity in the film. However, in response to microwave absorption studies, the irradiated film shows a presence of low field signal below transition temperature, characteristic of superconducting phase. This low field signal is also seen to be angle dependent with respect to the static magnetic field indicating the presence of columnar defects. (author)

  14. Formation and properties of hyaluronan/nano Ag and hyaluronan-lecithin/nano Ag films.

    Science.gov (United States)

    Khachatryan, Gohar; Khachatryan, Karen; Grzyb, Jacek; Fiedorowicz, Maciej

    2016-10-20

    A facile and environmentally friendly method of the preparation of silver nanoparticles embedded in hyaluronan (Hyal/Ag) and hyaluronan-lecithin (Hyal-L/Ag) matrix was developed. Thin, elastic foils were prepared from gels by an in situ synthesis of Ag in an aqueous solution of sodium hyaluronate (Hyal), using aq. d-(+)-xylose solution as a reducing agent. The gels were applied to a clean, smooth, defatted Teflon surface and left for drying in the air. The dry foils were stored in a closed container. UV-vis spectroscopy, transmission electron microscopy (TEM) and Fourier transform infrared (FTIR) spectra confirmed formation of about 10nm ball-shaped Ag nanoparticles situated within the polysaccharide template. Thermal properties of the composites were characterized involving differential scanning calorimetry (DSC) and thermogravimetric (TGA) analyses, whereas molecular weights of polysaccharide chains of the matrix were estimated with the size exclusion chromatography coupled with multiangle laser light scattering and refractometric detectors (HPSEC-MALLS-RI). An increase in the molecular weight of the hyaluronate after generation of Ag nanoparticles was observed. The foils showed specific properties. The study confirmed that silver nanoparticles can be successfully prepared with environmentally friendly method, using hyaluronan as a stabilizing template. Hyaluronan and hyaluronan-lecithin matrices provide nanocrystals uniform in size and shape. The composites demonstrated a bacteriostatic activity. PMID:27474588

  15. Correlated dewetting patterns in thin polystyrene films

    International Nuclear Information System (INIS)

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes

  16. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    G V Kunte; S A Shivashankar; A M Umarji

    2008-11-01

    Thin films of the hydrated phase of tungsten oxide, hydrotungstite (H2WO4.H2O), have been grown on glass substrates using a dip-coating technique. The -axis oriented films have been characterized by X-ray diffraction and scanning electron microscopy. The electrical conductivity of the films is observed to vary with humidity and selectively show high sensitivity to moisture at room temperature. In order to understand the mechanism of sensing, the films were examined by X-ray diffraction at elevated temperatures and in controlled atmospheres. Based on these observations and on conductivity measurements, a novel sensing mechanism based on protonic conduction within the surface layers adsorbed onto the hydrotungstite film is proposed.

  17. Correlated dewetting patterns in thin polystyrene films

    CERN Document Server

    Neto, C; Seemann, R; Blossey, R; Becker, J; Grün, G

    2003-01-01

    We describe preliminary results of experiments and simulations concerned with the dewetting of thin polystyrene films (thickness < 7 nm) on top of silicon oxide wafers. In the experiments we scratched an initially flat film with an atomic force microscopy (AFM) tip, producing dry channels in the film. Dewetting of the films was imaged in situ using AFM and a correlated pattern of holes ('satellite holes') was observed along the rims bordering the channels. The development of this complex film rupture process was simulated and the results of experiments and simulations are in good agreement. On the basis of these results, we attempt to explain the appearance of satellite holes and their positions relative to pre-existing holes.

  18. Resistance contact thin-film resistor

    Directory of Open Access Journals (Sweden)

    Spirin V. G.

    2008-10-01

    Full Text Available The analytical model of the calculation of the contact resistance of the thin-film resistor is Offered. The Explored dependency of the contact resistance from wedge of the pickling. The Considered influence adhesive layer on warm-up stability of the resistor. They Are Received formulas of the calculation systematic and casual inaccuracy contributed by contact resistance.

  19. New techniques for producing thin boron films

    International Nuclear Information System (INIS)

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  20. Electrical characterization of thin film ferroelectric capacitors

    NARCIS (Netherlands)

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D.; Keur, W.; Schmitz, J.; Hueting, R.J.E.

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offe

  1. Ferromagnetic resonance in very thin films

    Czech Academy of Sciences Publication Activity Database

    Cochran, J. F.; Kamberský, Vladimír

    2006-01-01

    Roč. 302, - (2006), s. 348-361. ISSN 0304-8853 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic resonance * magnetic thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.212, year: 2006

  2. Flexoelectricity in barium strontium titanate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning, E-mail: xjiang5@ncsu.edu [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Shu, Longlong [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Electronic Materials Research Laboratory, International Center for Dielectric Research, Xi' an Jiao Tong University, Xi' an, Shaanxi 710049 (China); Maria, Jon-Paul [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  3. US Polycrystalline Thin Film Solar Cells Program

    Science.gov (United States)

    Ullal, Harin S.; Zweibel, Kenneth; Mitchell, Richard L.

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R and D on copper indium diselenide and cadmium telluride thin films. The objective of the program is to support research to develop cells and modules that meet the U.S. Department of Energy's long-term goals by achieving high efficiencies (15 to 20 percent), low-cost ($50/m(sup 2)), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe2 and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The U.S. Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe2 and CdTe with subcontracts to start in spring 1990.

  4. US polycrystalline thin film solar cells program

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H S; Zweibel, K; Mitchell, R L [Solar Energy Research Inst., Golden, CO (USA)

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

  5. A ferroelectric transparent thin-film transistor

    NARCIS (Netherlands)

    Prins, MWJ; GrosseHolz, KO; Muller, G; Cillessen, JFM; Giesbers, JB; Weening, RP; Wolf, RM

    1996-01-01

    Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8Os3 as a ferroelectric insula

  6. Microwave-enhanced thin-film deposition

    Science.gov (United States)

    Chitre, S.

    1984-01-01

    The deposition of semiconducting and insulating thin films at low temperatures using microwave technology was explored. The method of plasma formations, selection of a power source, the design of the microwave plasma cavity, the microwave circuitry, impedance matching, plasma diagnostics, the deposition chamber and the vacuum system were studied.

  7. Rechargeable Thin-film Lithium Batteries

    Science.gov (United States)

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  8. Thermoviscoelastic models for polyethylene thin films

    DEFF Research Database (Denmark)

    Li, Jun; Kwok, Kawai; Pellegrino, Sergio

    2016-01-01

    This paper presents a constitutive thermoviscoelastic model for thin films of linear low-density polyethylene subject to strains up to yielding. The model is based on the free volume theory of nonlinear thermoviscoelasticity, extended to orthotropic membranes. An ingredient of the present approach...

  9. Surface spin slips in thin holmium films

    Directory of Open Access Journals (Sweden)

    F. H. S. Sales

    2012-09-01

    Full Text Available We report a theoretical investigation of new spin slips phases of thin holmium (Ho films. The new phases originate from the loss of coordination of atoms in the near surface region, which affects the balance between exchange and anisotropy energies, favoring the alignment of near surface spins along the basal plane easy axis directions.

  10. Monte Carlo simulation of magnetic nanostructured thin films

    Institute of Scientific and Technical Information of China (English)

    Guan Zhi-Qiang; Yutaka Abe; Jiang Dong-Hua; Lin Hai; Yoshitake Yamazakia; Wu Chen-Xu

    2004-01-01

    @@ Using Monte Carlo simulation, we have compared the magnetic properties between nanostructured thin films and two-dimensional crystalline solids. The dependence of nanostructured properties on the interaction between particles that constitute the nanostructured thin films is also studied. The result shows that the parameters in the interaction potential have an important effect on the properties of nanostructured thin films at the transition temperatures.

  11. Strain and structure in nano Ag films deposited on Au: Molecular dynamics simulation

    International Nuclear Information System (INIS)

    Molecular dynamics simulations are applied to analyze the stress and structure of nano Ag thin films deposited on the Au substrate. The interactions in the system are described by the embedded atom method. The kinematical theory of scattering is employed to identify the structure obtained from simulations data. Results shows that the silver layers are adjusted to the crystalline lattice of the gold buffer layers, and during the deposition process only compressive stress is observed. In all the cases the distribution of stress does not depend on temperature.

  12. Scintillation properties of LuAG:Ce single crystalline films grown by LPE method

    Czech Academy of Sciences Publication Activity Database

    Průša, Petr; Mareš, Jiří A.; Nikl, Martin; Kučera, M.; Nitsch, Karel

    Pisa : Plus - Pisa University Press, 2009 - (Tonelli, M.; Di Lieto, A.). s. 9-9 ISBN 978-88-8492-638-8. [International Symposium on Laser , Scintillator and Non Linear Optical Materials /5./. 03.09.2009-05.09.2009, Pisa] R&D Projects: GA ČR GA202/08/0893 Institutional research plan: CEZ:AV0Z10100521 Keywords : LuAG:Ce scintilator * thin films * LPE method * time dependence * photoelectron yield Subject RIV: BM - Solid Matter Physics ; Magnetism

  13. Transmission Electron Microscopy of the Textured Silver Back Reflector of a Thin Film Silicon Solar Cell: From Crystallography to Optical Absorption

    DEFF Research Database (Denmark)

    Duchamp, Martial; Söderström, K.; Jeangros, Q.;

    2011-01-01

    The study of light trapping in amorphous, microcrystalline and micromorph thin-film Si solar cells is an important and active field of investigation. It has been demonstrated that the use of a rough Ag back-reflector lead to an increase of short circuit current but also to losses through the...... the origin of optical absorption losses previously measured in Ag back-reflector of thin-film Si solar cells....

  14. Effects of alkali treatments on Ag nanowire transparent conductive films

    Science.gov (United States)

    Kim, Sunho; Kang, Jun-gu; Eom, Tae-yil; Moon, Bongjin; Lee, Hoo-Jeong

    2016-06-01

    In this study, we employ various alkali materials (alkali metals with different base strengths, and ammonia gas and solution) to improve the conductivity of silver nanowire (Ag NW)-networked films. The alkali treatment appears to remove the surface oxide and improve the conductivity. When applied with TiO2 nanoparticles, the treatment appears more effective as the alkalis gather around wire junctions and help them weld to each other via heat emitted from the reduction reaction. The ammonia solution treatment is found to be quick and aggressive, damaging the wires severely in the case of excessive treatment. On the other hand, the ammonia gas treatment seems much less aggressive and does not damage the wires even after a long exposure. The results of this study highlight the effectiveness of the alkali treatment in improving of the conductivity of Ag NW-networked transparent conductive films.

  15. Gamma radiation induced effects in floppy and rigid Ge-containing chalcogenide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ailavajhala, Mahesh S.; Mitkova, Maria [Department of Electrical Engineering, Boise State University, 1910 University Dr. Boise, Idaho 83725-2075 (United States); Gonzalez-Velo, Yago; Barnaby, Hugh; Kozicki, Michael N.; Holbert, Keith [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-9309 (United States); Poweleit, Christian [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Butt, Darryl P. [Department of Material Science and Engineering, Boise State University, 1910 University Dr. Boise, Idaho 83725-2090 (United States)

    2014-01-28

    We explore the radiation induced effects in thin films from the Ge-Se to Ge-Te systems accompanied with silver radiation induced diffusion within these films, emphasizing two distinctive compositional representatives from both systems containing a high concentration of chalcogen or high concentration of Ge. The studies are conducted on blanket chalcogenide films or on device structures containing also a silver source. Data about the electrical conductivity as a function of the radiation dose were collected and discussed based on material characterization analysis. Raman Spectroscopy, X-ray Diffraction Spectroscopy, and Energy Dispersive X-ray Spectroscopy provided us with data about the structure, structural changes occurring as a result of radiation, molecular formations after Ag diffusion into the chalcogenide films, Ag lateral diffusion as a function of radiation and the level of oxidation of the studied films. Analysis of the electrical testing suggests application possibilities of the studied devices for radiation sensing for various conditions.

  16. Thin film resistive materials: past, present and future

    Science.gov (United States)

    Cherian Lukose, C.; Zoppi, G.; Birkett, M.

    2016-01-01

    This paper explores the key developments in thin film resistive materials for use in the fabrication of discrete precision resistors. Firstly an introduction to the preparation of thin films and their fundamental properties is given with respect to well established systems such as NiCr, TaN and CrSiO. The effect of doping these systems in both solid and gaseous forms to further refine their structural and electrical properties is then discussed before the performance of more recent materials systems such as CuAlMo and MmAgCuN are reviewed. In addition to performance of the materials themselves, the effect of varying processing parameters such as deposition pressure and temperature and subsequent annealing environment, as well as laser trimming energy and geometry are also studied. It is shown how these parameters can be systematically controlled to produce films of the required properties for varying applications such as high precision, long term stability and high power pulse performance.

  17. Thin Films Characterization by Ultra Trace Metrology

    International Nuclear Information System (INIS)

    Sensitive and accurate characterization of thin films used in nanoelectronics, thinner than a few nm, represents a challenge for many conventional methods, especially when considering in-line control. With capabilities in the E10 at/cm2 (2O3 tunnel oxide deposited on a magnetic stack. On the other hand, composition analysis by TXRF, and especially the detection of minor elements into thin films, requires the use of a specific incident angle to optimize sensitivity. Under the best conditions, determination of the composition of Co -based self aligned barriers (CoWP and CoWMoPB films with Co concentration >80%) is done with a precision of 6% on P, 8% on Mo and 13% on W (standard deviation)

  18. Hematite thin films: growth and characterization

    Science.gov (United States)

    Uribe, J. D.; Osorio, J.; Barrero, C. A.; Giratá, D.; Morales, A. L.; Devia, A.; Gómez, M. E.; Ramirez, J. G.; Gancedo, J. R.

    We have grown hematite (α - Fe 2 O 3) thin films on stainless steel and (001)-silicon single-crystal substrates by RF magnetron sputtering process in argon atmosphere at substrate temperatures from 400 to 800°C. Conversion Electron Mössbauer (CEM) spectra of the sample grown on stainless steel at 400°C exhibit values for hyperfine parameter characteristic of bulk hematite phase in the weak ferromagnetic state. Also, the relative line intensity ratio suggests that the magnetization vector of the polycrystalline film is aligned preferentially parallel to the surface. The X-ray diffraction (XRD) pattern of the polycrystalline thin film grown on steel substrates also corresponds to α - Fe 2O3. The samples were also analyzed by Atomic Force Microscopy (AFM), those grown on stainless steel reveal a morphology consisting of columnar grains with random orientation, given the inhomogeneity of the substrate surface.

  19. Thin film instability with thermal noise

    CERN Document Server

    Diez, Javier A; Fernández, Roberto

    2016-01-01

    We study the effects of stochastic thermal fluctuations on the instability of the free surface of a flat liquid film upon a solid substrate. These fluctuations are represented as a standard Brownian motion that can be added to the deterministic equation for the film thickness within the lubrication approximation. Here, we consider that while the noise term is white in time, it is coloured in space. This allows for the introduction of a finite correlation length in the description of the randomized intermolecular interaction. Together with the expected spatial periodicity of the flow, we find a dimensionless parameter, $\\beta$, that accounts for the relative importance of the spatial correlation. We perform here the linear stability analysis (LSA) of the film under the influence of both terms, and find the corresponding power spectra for the amplitudes of the normal modes of the instability. We compare this theoretical result with the numerical simulations of the complete non-linear problem, and find a good ag...

  20. The effect of thermal annealing on pentacene thin film transistor with micro contact printing.

    Science.gov (United States)

    Shin, Hong-Sik; Yun, Ho-Jin; Baek, Kyu-Ha; Ham, Yong-Hyun; Park, Kun-Sik; Kim, Dong-Pyo; Lee, Ga-Won; Lee, Hi-Deok; Lee, Kijun; Do, Lee-Mi

    2012-07-01

    We used micro contact printing (micro-CP) to fabricate inverted coplanar pentacene thin film transistors (TFTs) with 1-microm channels. The patterning of micro-scale source/drain electrodes without etch process was successfully achieved using Polydimethylsiloxane (PDMS) elastomer stamp. We used the Ag nano particle ink as an electrode material, and the sheet resistance and surface roughness of the Ag electrodes were effectively reduced with the 2-step thermal annealing on a hotplate, which improved the mobility, the on-off ratio, and the subthreshold slope (SS) of the pentacene TFTs. In addition, the device annealing on a hotplate in a N2 atmosphere for 30 sec can enhance the off-current and the mobility properties of OTFTs without damaging the pentacene thin films and increase the adhesion between pentacene and dielectric layer (SiO2), which was investigated with the pentacene films phase change of the XRD spectrum after device annealing. PMID:22966565

  1. Thin film bismuth iron oxides useful for piezoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  2. Interaction of acetonitrile with thin films of solid water

    International Nuclear Information System (INIS)

    Thin films of water were prepared on Ag at 124 K. Their properties were studied with metastable impact electron spectroscopy, reflection absorption infrared spectroscopy, and temperature programmed desorption. The interaction of acetonitrile (ACN) with these films was studied with the abovementioned techniques. From the absence of any infrared activity in the initial adsorption stage, it is concluded that ACN adsorbs linearly and that the C≡N axis is aligned parallel to the water surface (as also found on neat Ag). Initially, the interaction with water surface species involves their dangling OD groups. During the completion of the first adlayer the ACN-ACN lateral interaction becomes of importance as well, and the ACN molecules become tilted with respect to the water surface. ACN shows propensity to stay at the surface after surface adsorption even during annealing up to the onset of desorption. The present results for the ACN-water interaction are compared with available classical molecular dynamics calculations providing the orientation profile for ACN on water as well as the ACN bonding properties.

  3. Thin-film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.

    1987-10-01

    Cadmium telluride, with a room-temperature band-gap energy of 1.5 eV, is a promising thin-film photovoltaic material. The major objective of this research has been to demonstrate thin-film CdTe heterojunction solar cells with a total area greater than 1 sq cm and photovoltaic efficiencies of 13 percent or more. Thin-film p-CdTe/CdS/SnO2:F/glass solar cells with an AM1.5 efficiency of 10.5 percent have been reported previously. This report contains results of work done on: (1) the deposition, resistivity control, and characterization of p-CdTe films by the close-spaced sublimation process; (2) the deposition of large-band-gap window materials; (3) the electrical properties of CdS/CdTe heterojunctions; (4) the formation of stable, reproducible, ohmic contacts (such as p-HgTe) to p-CdTe; and (5) the preparation and evaluation of heterojunction solar cells.

  4. Energetic deposition of thin metal films

    CERN Document Server

    Al-Busaidy, M S K

    2001-01-01

    deposited films. The primary aim of this thesis was to study the physical effect of energetic deposition metal thin films. The secondary aim is to enhance the quality of the films produced to a desired quality. Grazing incidence X-ray reflectivity (GIXR) measurements from a high-energy synchrotron radiation source were carried out to study and characterise the samples. Optical Profilers Interferometery, Atomic Force Microscope (AFM), Auger electron spectroscopy (AES), Medium energy ion spectroscopy (MEIS), and the Electron microscope studies were the other main structural characterisation tools used. AI/Fe trilayers, as well as multilayers were deposited using a Nordico planar D.C. magnetron deposition system at different voltage biases and pressures. The films were calibrated and investigated. The relation between energetic deposition variation and structural properties was intensely researched. Energetic deposition refers to the method in which the deposited species possess higher kinetic energy and impact ...

  5. Transformation process of the magnetron-sputtered Ag$_2$O film in hydrogen annealing

    OpenAIRE

    Gao, Xiaoyong; Zhao, Mengke; Liu, Hongtao; Zhang, Sa

    2013-01-01

    The current paper mainly addresses the effect of the hydrogen partial pressure on the microstructure and transformation of the Ag$_2$O film. The transformation process and mechanism were also analyzed in detail. Increasing the hydrogen partial pressure can accelerate the transformation of Ag$_2$O to Ag and lower the critical transformation temperature of the film due to the enhanced hydrogen reduction, and to both of the lowered activation energy of the reaction of Ag$_2$O with hydrogen and e...

  6. Fullerene nanostructures, monolayers and thin films

    International Nuclear Information System (INIS)

    The interaction of submonolayer, monolayer and multilayer coverages of C60 with the Ag/Si(111)-(√3x√3)R30 deg. (√3Ag/Si) and Si(111)-7x7 surfaces has been investigated using atomic force microscopy (AFM), photoelectron spectroscopy (PES) and ultra high vacuum scanning tunneling microscopy (UHV-STM). It is shown that it is possible to preserve the √3Ag/Si surface, normally corrupted by exposure to air, in ambient conditions when immersed beneath a few layers of C60 molecules. Upon removal of the fullerene layers in the UHV-STM some corruption is observed which is linked to the morphology of the fullerene film (defined by the nature of the interaction of C60 with √3Ag/Si). This technique opens up the possibility of performing experiments on the clean √3Ag/Si surface outside of UHV conditions. With the discovery of techniques whereby structures may be formed that are composed of only a few atoms/molecules, there is a need to perform electrical measurements in order to probe the fascinating properties of these 'nano-scale' devices. Using AFM, PES and STM evaporated metals and ion implantation have been investigated as materials for use in forming sub-micron scale contacts to nanostructures. It is found that ion implantation is a more promising approach after studying the response to annealing of treated surfaces. Electrical measurements between open/short circuited contacts and through Ag films clearly demonstrate the validity of the method, further confirmed by a PES study which probes the chemical nature of the near surface region of ion-implanted samples. Attempts have been made to form nanostructure templates between sub-micron scale contacts as a possible precursor to forming nanostructures. The bonding state of C60 molecules on the Si(111)-7x7 surface has been in dispute for many years. To properly understand the system a comprehensive AFM, PES and STM study has been performed. PES results indicate covalent bond formation, with the number of bonds

  7. Mechanical, structural and thermal properties of Ag-Cu and ZnO reinforced polylactide nanocomposite films.

    Science.gov (United States)

    Ahmed, Jasim; Arfat, Yasir Ali; Castro-Aguirre, Edgar; Auras, Rafael

    2016-05-01

    Plasticized polylactic acid (PLA) based nanocomposite films were prepared by incorporating polyethylene glycol (PEG) and two selected nanoparticles (NPs) [silver-copper (Ag-Cu) alloy (<100nm) and zinc oxide (ZnO) (<50 and <100nm)] through solvent casting method. Incorporation of Ag-Cu alloy into the PLA/PEG matrix increased the glass transition temperature (Tg) significantly. The crystallinity of the nanocomposites (NCs) was significantly influenced by NP incorporation as evidenced from differential scanning calorimetry (DSC) and X-ray diffraction (XRD) analysis. The PLA nanocomposite reinforced with NPs exhibited much higher tensile strength than that of PLA/PEG blend. Melt rheology of NCs exhibited a shear-thinning behavior. The mechanical property drastically reduced with a loading of NPs, which is associated with degradation of PLA. SEM micrographs exhibited that both Ag-Cu alloy and ZnO NPs were dispersed well in the PLA film matrix. PMID:26893045

  8. Basic thin film processing for high-Tc superconductors

    International Nuclear Information System (INIS)

    Much attention has been paid for the thin films of perovskite-type oxides especially for the thin films of the high-Tc superconducting ceramics. Historically the thin films of the perovskite-type oxides have been studied as a basic research for ferroelectric materials. Thin films of BaTiO3 and PbTiO3 were tried to deposited and there ferroelectricity was evaluated. Recently this kind of perovskite thin films, including PZT (PbTiO3-PbZrO3) and PLZT [(Pb, La) (Zr, T)O3] have been studied in relation to the synthesis of thin film dielectrics, pyroelectrics, piezoelectrics, electro-optic materials, and acousto-optic materials. Thin films of BPB (BaPbO3- BaBiO3) were studied as oxide superconductors. At present the thin films of the rare-earth high-Tc superconductors of LSC (La1-xSrxCuO4) and YBC (YBa2Cu3O7-δ) have been successfully synthesized owing to the previous studies on the ferroelectric thin films of the perovskite- type oxides. Similar to the rare-earth high-Tc superconductors thin films of the rare-earth-free high-Tc superconductors of BSCC (Bi-Sr-Ca-Cu-O)9 and TBCC (Tl- Ba-Ca-Cu-O)10 system have been synthesized. In this section the basic processes for the fabrication of the high- Tc perovskite superconducting thin films are described

  9. Thin Films for Coating Nanomaterials

    Institute of Scientific and Technical Information of China (English)

    S.M.Mukhopadhyay; P.Joshi; R.V.Pulikollu

    2005-01-01

    For nano-structured solids (those with one or more dimensions in the 1-100 nm range), attempts of surface modification can pose significant and new challenges. In traditional materials, the surface coating could be several hundreds nanometers in thickness, or even microns and millimeters. In a nano-structured material, such as particle or nanofibers, the coating thickness has to be substantially smaller than the bulk dimensions (100 nm or less), yet be durable and effective. In this paper, some aspects of effective nanometer scale coatings have been discussed. These films have been deposited by a non-line of sight (plasma)techniques; and therefore, they are capable of modifying nanofibers, near net shape cellular foams, and other high porosity materials. Two types of coatings will be focused upon: (a) those that make the surface inert and (b) those designed to enhance surface reactivity and bonding. The former has been achieved by forming 1-2 nm layer of -CF2- (and/or CF3) groups on the surface, and the latter by creating a nanolayer of SiO2-type compound. Nucleation and growth studies of the plasma-generated film indicate that they start forming as 2-3 nm high islands that grow laterally, and eventually completely cover the surface with 2-3nm film. Contact angle measurements indicate that these nano-coatings are fully functional even before they have achieved complete coverage of 2-3 nm. They should therefore be applicable to nano-structural solids.This is corroborated by application of these films on vapor grown nanofibers of carbon, and on graphitic foams. Coated and uncoated materials are infiltrated with epoxy matrix to form composites and their microstructure, as well as mechanical behaviors are compared. The results show that the nano-oxide coating can significantly enhance bond formation between carbon and organic phases, thereby enhancing wettability,dispersion, and composite behavior. The fluorocarbon coating, as expected, reduces bond formation, and

  10. Optical thin films and coatings from materials to applications

    CERN Document Server

    Flory, Francois

    2013-01-01

    Optical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. This book provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas.$bOptical coatings, including mirrors, anti-reflection coatings, beam splitters, and filters, are an integral part of most modern optical systems. Optical thin films and coatings provides an overview of thin film materials, the properties, design and manufacture of optical coatings and their use across a variety of application areas. Part one explores the design and manufacture of optical coatings. Part two highlights unconventional features of optical thin films including scattering properties of random structures in thin films, optical properties of thin film materials at short wavelengths, thermal properties and colour effects. Part three focusses on novel materials for optical thin films and coatings...

  11. Analysis on superhydrophobic silver decorated copper Oxide nanostructured thin films for SERS studies.

    Science.gov (United States)

    Jayram, Naidu Dhanpal; Aishwarya, D; Sonia, S; Mangalaraj, D; Kumar, P Suresh; Rao, G Mohan

    2016-09-01

    The present work demonstrates the superhydrophobic and Surface Enhanced Raman Spectroscopy (SERS) active substrate performance of silver coated copper oxide (Ag@CuO) nanostructured thin films prepared by the SILAR process. Super hydrophobic substrates that combine super hydrophobic condensation effect and high enhancement ability of Ag@CuO nanoflowers are investigated for SERS studies. The possible growth mechanism for the formation of nanoflower arrays from nanospindles has been discussed. Morphology and crystallinity of the Ag@CuO thin films are confirmed using FESEM and XRD. The results obtained in the present study indicate that the as-deposited hydrophobic nanospindles structure converts to super hydrophobic nanoflower arrays on annealing at 200°C. The Ag@CuO super hydrophobic nanoflowers thin film based SERS substrates show highly enhanced Raman spectra with an EF value of 2.0×10(7) for (Rhodamine 6G) R6G, allowing a detection limit from a 10(-10)molL(-1) solution. The present study may provide a new perception in fabricating efficient super hydrophobic substrates for SERS, suggesting that the fabricated substrates are promising candidates for trace analysis of R6G dye and are expected to be widely used as highly sensitive SERS active substrates for various toxic dyes in the future. PMID:27294970

  12. Desorption of Ag from Grain Boundaries in Ag Film on Br and H-Passivated Si(111) Surfaces

    International Nuclear Information System (INIS)

    Growth of Ag film on Br- and H-passivated Si(111) surfaces was examined by Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and photoemission electron microscopy (PEEM) techniques. The phenomenon of thermal grooving was observed after annealing at higher temperatures. Hierarchical desorption of Ag from the grain boundaries produce a fractal structure of Ag-depleted regions. Hierarchical desorption may be used for nanopatterning of the layer.

  13. Electrodeposited nanostructured WO3 thin films for photoelectrochemical applications

    International Nuclear Information System (INIS)

    Thin films of WO3 were deposited on FTO-coated glass substrates by electrodeposition using aqueous solutions of peroxotungstic acid. The effects of varying the tungsten concentration of peroxotungstic acid and deposition time on the mineralogical, microstructural, morphological, optical, and photoelectrochemical properties were determined using X-ray diffraction, scanning electron microscopy, focused ion beam milling, UV–vis spectrophotometry, and linear potentiodynamic voltammetry, respectively. The films consisted of monoclinic WO3 of grain sizes in the range 77–122 nm and thicknesses in the range 258–1394 nm; the true porosities were <5%. These microstructural and morphological parameters depended largely upon the tungsten concentration and deposition time. Some preferred orientation was observed and this was considered to result from crystallographic and microstructural factors. The optical transmission data revealed significant decreases in the optical indirect band gap, from 3.05 eV to 2.60 eV, as a function of increasing film thickness. This was considered to result from differential contributions from the surface and bulk band gap components as well as compressive stress. The voltammetry data and associated Butler plot revealed the establishment of a Schottky depletion layer and a flat-band potential of +0.2 V to +0.3 V versus Ag/AgCl. Although the calculated photoconversion efficiencies were in the range 0.02–0.14%, which is commensurate with the use of a tungsten–halogen light rather than xenon, there was a trend of increasing efficiency as a function of increasing film thickness. This was attributed to decreasing band gap and increasing light absorption. The shape of the curve of the preceding data supports the conclusion of differential contributions from the surface and bulk band gap components. Finally, evidence of photolysis in the absence of an external applied potential suggests the importance of the effect of grain size on the pH and its

  14. Stretchability of Silver Films on Thin Acid-Etched Rough Polydimethylsiloxane Substrates Fabricated by Electrospray Deposition

    Science.gov (United States)

    Mehdi, S. M.; Cho, K. H.; Kang, C. N.; Choi, K. H.

    2015-07-01

    This paper investigates the fabrication of Ag films through the electrospray deposition (ESD) technique on sub-millimeter-thick acid-etched rough polydimethylsiloxane (PDMS) substrates having both low and high modulus of elasticity. The main focus of the study is on the stretchable behavior of ESD-deposited Ag nanoparticles-based thin films on these substrates when subjected to axial strains. Experimental results suggest that the as-fabricated films on thin acid-etched rough low modulus PDMS has an average stretchability of 5.6% with an average increase in the resistance that is 23 times that of the initial resistance at electrical failure (complete rupture of the films). Comparatively, the stretchability of Ag films on the high modulus PDMS was found to be 3 times higher with 4.65 times increase in the resistance at electrical failure. Also, a high positive value of the piezoresistive coefficient for these films suggests that the resistivity changes during stretching, and thus deviation from the simplified models is inevitable. Based on these results, new models are presented that quantify the changes in resistance with strain.

  15. Columnar grain growth of FePt(L10) thin films

    International Nuclear Information System (INIS)

    An experimental approach for obtaining perpendicular FePt-SiOx thin films with a large height to diameter ratio FePt(L10) columnar grains is presented in this work. The microstructure for FePt-SiOx composite thin films as a function of oxide volume fraction, substrate temperature, and film thickness is studied by plan view and cross section TEM. The relations between processing, microstructure, epitaxial texture, and magnetic properties are discussed. By tuning the thickness of the magnetic layer and the volume fraction of oxide in the film at a sputtering temperature of 410 deg. C, a 16 nm thick perpendicular FePt film with ∼8 nm diameter of FePt grains was obtained. The height to diameter ratio of the FePt grains was as large as 2. Ordering at lower temperature can be achieved by introducing a Ag sacrificial layer.

  16. Columnar grain growth of FePt(L1{sub 0}) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang En; Ho Hoan [Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Laughlin, David E. [Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); ALCOA Professor of Physical Metallurgy, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Zhu Jiangang [Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); ABB Professor of Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

    2012-04-01

    An experimental approach for obtaining perpendicular FePt-SiOx thin films with a large height to diameter ratio FePt(L1{sub 0}) columnar grains is presented in this work. The microstructure for FePt-SiOx composite thin films as a function of oxide volume fraction, substrate temperature, and film thickness is studied by plan view and cross section TEM. The relations between processing, microstructure, epitaxial texture, and magnetic properties are discussed. By tuning the thickness of the magnetic layer and the volume fraction of oxide in the film at a sputtering temperature of 410 deg. C, a 16 nm thick perpendicular FePt film with {approx}8 nm diameter of FePt grains was obtained. The height to diameter ratio of the FePt grains was as large as 2. Ordering at lower temperature can be achieved by introducing a Ag sacrificial layer.

  17. Columnar grain growth of FePt(L10) thin films

    Science.gov (United States)

    Yang, En; Ho, Hoan; Laughlin, David E.; Zhu, Jian-Gang

    2012-04-01

    An experimental approach for obtaining perpendicular FePt-SiOx thin films with a large height to diameter ratio FePt(L10) columnar grains is presented in this work. The microstructure for FePt-SiOx composite thin films as a function of oxide volume fraction, substrate temperature, and film thickness is studied by plan view and cross section TEM. The relations between processing, microstructure, epitaxial texture, and magnetic properties are discussed. By tuning the thickness of the magnetic layer and the volume fraction of oxide in the film at a sputtering temperature of 410 °C, a 16 nm thick perpendicular FePt film with ˜8 nm diameter of FePt grains was obtained. The height to diameter ratio of the FePt grains was as large as 2. Ordering at lower temperature can be achieved by introducing a Ag sacrificial layer.

  18. Ternary Mn3NMn1-x Ag x compound films of nearly constant electrical resistivity and their magnetic transport behaviour

    Science.gov (United States)

    Lu, N. P.; Xu, T.; Cao, Z. X.; Ji, A. L.

    2016-02-01

    Antiperovskite \\text{M}{{\\text{n}}3}\\text{NM}{{\\text{n}}1-x}\\text{A}{{\\text{g}}x} thin films were successfully prepared by reactive magnetron sputtering. The increasing substitution of Ag atoms at the MnA-sites of cubic Mn3NMn lattice leads to the metal-to-semiconductor transition, through which a vanishingly small temperature coefficient of resistivity down to 20 ppm K-1 over a temperature range of 50 to 200 K was achieved. Meanwhile, with increasing content of Ag atoms the magnetic behaviour of the deposits also changes that the ferromagnetism gradually diminishes and the freezing temperature steadily downshifts. The simultaneously tunable magnetic property and the nature of electric conductivity may inspire some innovative applications of the manganese nitride-based antiperovskite thin films.

  19. Ultra-thin LiPON films - Fundamental properties and application in solid state thin film model batteries

    Science.gov (United States)

    Nowak, Susann; Berkemeier, Frank; Schmitz, Guido

    2015-02-01

    We report on the preparation of Li+ conducting lithium phosphorus oxynitride (LiPON) layers by ion beam sputtering, resulting in ultra-thin layers with a thickness down to only 12 nm. The morphology of the layers is studied by transmission electron microscopy, whereas homogeneity and excellent interface quality is observed. The ion conducting properties of the layers are studied as a function of temperature and layer thickness, using electrochemical impedance spectroscopy. In these measurements, a specific ionic conductivity at room temperature of around 2 · 10-7 S cm-1 is found that results in a maximum conductance of 0.2 S cm-2, thanks to their ultra-small thickness. To demonstrate the applicability of the thin films as functional solid state electrolyte, Ag/LiPON/Pt triple layers are studied, serving as models for all solid state batteries. The functionality of these model batteries is measured by cyclic voltammetry of up to 100 charge-discharge cycles, and their morphology after cycling is investigated by transmission electron microscopy. For the first time, these investigations give insight into the morphology of this kind of model cell after intensive cycling. In particular, they allow determining the specific lithium storage capacity of the interface reaction layer between Ag and LiPON, which is found to be around 12 μAh cm-2 μm-1.

  20. Thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  1. Non-local thin films in Casimir force calculations

    OpenAIRE

    Esquivel, R.; Svetovoy, V.

    2005-01-01

    he Casimir force is calculated between plates with thin metallic coating. Thin films are described with spatially dispersive (nonlocal) dielectric functions. For thin films the nonlocal effects are more relevant than for half-spaces. However, it is shown that even for film thickness smaller than the mean free path for electrons, the difference between local and nonlocal calculations of the Casimir force is of the order of a few tenths of a percent. Thus the local description of thin metallic ...

  2. Structural and optical properties of AgIn5S8 films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    In thin AgIn5S8 films prepared by pulsed laser evaporation of volume crystals on glass substrates crystal structure, composition, morphology, surfaces were investigated, and transmission and reflection spectra were measured in spectral field from 0.5 to 2.5 μm. Coefficient of optical absorption were calculated and energies for direct and indirect interzone transitions were determined. It is shown that obtained experimental results for laser deposited AgIn5S8 layers agree well with the data for volume crystals

  3. Nitrogen doped zinc oxide thin film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Sonny X.

    2003-12-15

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  4. ZnO/Ag nanowires composite film ultraviolet photoconductive detector

    Science.gov (United States)

    Guodong, Yan; Minqiang, Wang; Zhi, Yang

    2015-08-01

    ZnO/Ag nanowires (NWs) film ultraviolet (UV) detector was fabricated by a simple and low-cost solution-processed method. In order to prepare this device, Ag NWs network was first spin-coated on glass substrate as a transparent conducting electrode, then ZnO NWs arrays were grown vertically on the Ag NWs network based on the hydrothermal method. This UV detector exhibited an excellent detection performance with large on/off ratio and short response time. Several process and working parameters were particularly investigated to analyze the relationship between structure and performance, which include growth time of ZnO NWs array, spin speed of Ag NWs network and working temperature. This UV photoconductive detector is based on two kinds of one-dimension nanomaterials, and it was regarded as a compromise between high performance with large area, low voltage and low cost. Project supported by the National Natural Science Foundation of China (Nos. 61176056, 91323303, 91123019), the 111 Program (No. B14040), and the Open Projects from the Institute of Photonics and Photo-Technology, Provincial Key Laboratory of Photoelectronic Technology, Northwest University, China.

  5. Indium sulfide thin films as window layer in chemically deposited solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lugo-Loredo, S. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Peña-Méndez, Y., E-mail: yolapm@gmail.com [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico); Calixto-Rodriguez, M. [Universidad Tecnológica Emiliano Zapata del Estado de Morelos, Av. Universidad Tecnológica No. 1, C.P. 62760 Emiliano Zapata, Morelos (Mexico); Messina-Fernández, S. [Universidad Autónoma de Nayarit, Ciudad de la Cultura “Amado Nervo” S/N, C.P. 63190 Tepic, Nayarit (Mexico); Alvarez-Gallegos, A. [Universidad Autónoma del Estado de Morelos, Centro de Investigación en Ingeniería y Ciencias Aplicadas, Av. Universidad 1001, C.P. 62209, Cuernavaca Morelos (Mexico); Vázquez-Dimas, A.; Hernández-García, T. [Universidad Autónoma de Nuevo León, UANL, Fac. de Ciencias Químicas, Av. Universidad S/N Ciudad Universitaria San Nicolás de Los Garza Nuevo León, C.P. 66451 (Mexico)

    2014-01-01

    Indium sulfide (In{sub 2}S{sub 3}) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO{sub 3}){sub 3} as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In{sub 2}S{sub 3}. Optical band gap values between 2.27 and 2.41 eV were obtained for these films. The In{sub 2}S{sub 3} thin films are photosensitive with an electrical conductivity value in the range of 10{sup −3}–10{sup −7} (Ω cm){sup −1}, depending on the film preparation conditions. We have demonstrated that the In{sub 2}S{sub 3} thin films obtained in this work are suitable candidates to be used as window layer in thin film solar cells. These films were integrated in SnO{sub 2}:F/In{sub 2}S{sub 3}/Sb{sub 2}S{sub 3}/PbS/C–Ag solar cell structures, which showed an open circuit voltage of 630 mV and a short circuit current density of 0.6 mA/cm{sup 2}. - Highlights: • In{sub 2}S{sub 3} thin films were deposited using the Chemical Bath Deposition technique. • A direct energy band gap between 2.41 to 2.27 eV was evaluated for the In{sub 2}S{sub 3} films. • We made chemically deposited solar cells using the In{sub 2}S{sub 3} thin films.

  6. PST thin films for electrocaloric coolers

    International Nuclear Information System (INIS)

    Relaxor behaviour in a thin film of partially ordered PbSc0.5Ta0.5O3 (PST) was confirmed via slim P-E loops and the frequency dependence of the temperature at which the dielectric constant is maximum. Indirect measurements of the electrocaloric effect suggest that removing a field of 774 kV cm-1 yields a temperature change of -3.5 deg. C to -6.9 deg. C over a broad range of operating temperatures near room temperature (1-127 deg. C), with a correspondingly large refrigerant capacity of 662 J kg-1. In addition to low electrical hysteresis, there is negligible thermal hysteresis. PST thin films are therefore promising for EC cooling near room temperature.

  7. Generalized Ellipsometry on Ferromagnetic Sculptured Thin Films.

    Science.gov (United States)

    Schmidt, Daniel; Hofmann, Tino; Mok, Kah; Schmidt, Heidemarie; Skomski, Ralf; Schubert, Eva; Schubert, Mathias

    2011-03-01

    We present and discuss generalized ellipsometry and generalized vector-magneto-optic ellipsometry investigations on cobalt nanostructured thin films with slanted, highly-spatially coherent, columnar arrangement. The samples were prepared by glancing angle deposition. The thin films are highly transparent and reveal strong form-induced birefringence. We observe giant Kerr rotation in the visible spectral region, tunable by choice of the nanostructure geometry. Spatial magnetization orientation hysteresis and magnetization magnitude hysteresis properties are studied using a 3-dimensional Helmholtz coil arrangement allowing for arbitrary magnetic field direction at the sample position for field strengths up to 0.4 Tesla. Analysis of data obtained within this novel vector-magneto-optic setup reveals magnetization anisotropy of the Co slanted nanocolumns supported by mean-field theory modeling.

  8. Multiferroic oxide thin films and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Chengliang, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Hu, Weijin; Wu, Tom, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Tian, Yufeng [School of Physics, Shandong University, Jinan 250100 (China)

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  9. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  10. Electrical characterization of thin film ferroelectric capacitors

    OpenAIRE

    Tiggelman, M.P.J.; Reimann, K.; Klee, M.; Beelen, D; Keur, W.; J. Schmitz; Hueting, R.J.E.

    2006-01-01

    Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and ...

  11. Quantized Nanocrystalline CdTe Thin Films

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Nanocrystalline CdTe thin films were prepared by asymmetric rectangular pulse electrodeposition in organic solution at 110°C. STM image shows a porous network morphology constructed by interconnected spherical CdTe crystallites with a mean diameter of 4.2 nm. A pronounced size quantization was indicated in the action and absorption spectra. Potentials dependence dual conductive behavior was revealed in the photocurrent-potential (I-V) curves.

  12. Amperometric Noise at Thin Film Band Electrodes

    DEFF Research Database (Denmark)

    Larsen, Simon T.; Heien, Michael L.; Taboryski, Rafael

    2012-01-01

    Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive...... presented here can be used for choosing an electrode material and dimensions and when designing chip-based devices for low-noise current measurements....

  13. Ferromagnetic Liquid Thin Films Under Applied Field

    OpenAIRE

    Banerjee, S.; Widom, M.

    1999-01-01

    Theoretical calculations, computer simulations and experiments indicate the possible existence of a ferromagnetic liquid state, although definitive experimental evidence is lacking. Should such a state exist, demagnetization effects would force a nontrivial magnetization texture. Since liquid droplets are deformable, the droplet shape is coupled with the magnetization texture. In a thin-film geometry in zero applied field, the droplet has a circular shape and a rotating magnetization texture ...

  14. Electrochemical Analysis of Conducting Polymer Thin Films

    OpenAIRE

    Bin Wang; Vyas, Ritesh N.

    2010-01-01

    Polyelectrolyte multilayers built via the layer-by-layer (LbL) method has been one of the most promising systems in the field of materials science. Layered structures can be constructed by the adsorption of various polyelectrolyte species onto the surface of a solid or liquid material by means of electrostatic interaction. The thickness of the adsorbed layers can be tuned precisely in the nanometer range. Stable, semiconducting thin films are interesting research subjects. We use a conducting...

  15. Thin-film silicon solar cell technology

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A.V.; Meier, J.; Kroll, U.; Droz, C.; Bailat, J. [University of Neuchatel (Switzerland). Inst. of Microtechnology; Schade, H. [RWE Schott Solar GmbH, Putzbrunn (Germany); Vanecek, M. [Academy of Sciences, Prague (Czech Republic). Inst. of Physics; Vallat Sauvain, E.; Wyrsch, N. [University of Neuchatel (Switzerland). Inst. of Microtechnology; Unaxis SPTec S A, Neuchatel (Switzerland)

    2004-07-01

    This paper describes the use, within p-i-n- and n-i-p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon ({mu}c-Si:H) thin films (layers), both deposited at low temperatures (200{sup o}C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. These properties are linked to the microstructure and hence to the i-layer deposition rate, that in turn, affects throughput in production. The importance of contact and reflection layers in achieving low electrical and optical losses is explained, particularly for the superstrate case. Especially the required properties for the transparent conductive oxide (TCO) need to be well balanced in order to provide, at the same time, for high electrical conductivity (preferably by high electron mobility), low optical absorption and surface texture (for low optical losses and pronounced light trapping). Single-junction amorphous and microcrystalline p-i-n-type solar cells, as fabricated so far, are compared in their key parameters (J{sub sc},FF,V{sub oc}) with the [theoretical] limiting values. Tandem and multijunction cells are introduced; the {mu}c-Si: H/a-Si: H or [micromorph] tandem solar cell concept is explained in detail, and recent results obtained here are listed and commented. Factors governing the mass-production of thin-film silicon modules are determined both by inherent technical reasons, described in detail, and by economic considerations. The cumulative effect of these factors results in distinct efficiency reductions from values of record laboratory cells to statistical averages of production modules. Finally, applications of thin-film silicon PV modules, especially in building-integrated PV (BIPV) are shown. In this context, the energy yields of thin-film silicon modules emerge as a valuable gauge for module performance, and compare very favourably with those of

  16. Thin film sensors for measuring small forces

    OpenAIRE

    F. Schmaljohann; Hagedorn, D.; LÖffler, F.

    2015-01-01

    Especially in the case of measuring small forces, the use of conventional foil strain gauges is limited. The measurement uncertainty rises by force shunts and is due to the polymer foils used, as they are susceptible to moisture. Strain gauges in thin film technology present a potential solution to overcome these effects because of their direct and atomic contact with the measuring body, omitting an adhesive layer and the polymer foil. For force measurements up to 1 N, a...

  17. Structures for dense, crack free thin films

    Science.gov (United States)

    Jacobson, Craig P.; Visco, Steven J.; De Jonghe, Lutgard C.

    2011-03-08

    The process described herein provides a simple and cost effective method for making crack free, high density thin ceramic film. The steps involve depositing a layer of a ceramic material on a porous or dense substrate. The deposited layer is compacted and then the resultant laminate is sintered to achieve a higher density than would have been possible without the pre-firing compaction step.

  18. Recent developments in thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dhere, N.G. (Inst. Militar de Engenharia, Rio de Janeiro, RJ (Brazil))

    1990-12-15

    In recent years, remarkable progress has been made in improving the photovoltaic (PV) conversion efficiencies of thin film solar cells. The best active-area efficiencies (air mass 1.5) of thin film solar cells reported are as follows: polycrystalline CuInSe{sub 2}, 14.1%; CuIn(Ga)Se{sub 2}, 12.9%; CdTe, 12.3%, total area; single-junction hydrogenated amorphous silicon (a-Si:H), 12.0%; multiple-junction a-Si:H, 13.3%; cleaved epitaxial GaAs-Ga{sub 1-x}Al{sub x}As, 21.5%, total area. Laboratory methods for preparing small thin film solar cells are evaporation, closed-space sublimation, closed-space vapor transport, vapor phase epitaxy and metallo-organic chemical vapor deposition, while economic large-area deposition techniques such as sputtering, glow discharge reduction, electrodeposition, spraying and screen printing are being used for module fabrication. The following aperture-area efficiencies have been measured, at the Solar Energy Research Inst., for thin film modules: a-Si:H, 9.8%, 933 cm{sup 2}; CuIn(Ga)Se{sub 2}, 11.1%, 938 cm{sup 2}; CdTe, 7.3%, 838 cm{sup 2}. The instability issue of a-Si:H continues to be a high priority area. It is necessary to improve the open-circuit voltage of CuIn(Ga)Se{sub 2} cells, which do not seem to exhibit any intrinsic degradation mechanisms. With continued progress and increased production, PV modules are likely to become competitive for medium-scale power requirements in the mid-1990s. (orig.).

  19. Surface morphology of thin films polyoxadiazoles

    OpenAIRE

    J. Weszka; M.M. Szindler; M. Chwastek-Ogierman; M. Bruma; P. Jarka; Tomiczek, B.

    2011-01-01

    urpose: The purpose of this paper was to analyse the surface morphology of thin films polyoxadiazoles. Design/methodology/approach: SSix different polymers which belong to the group of polyoxadiazoles were dissolved in the solvent NMP. Each of these polymer was deposited on a glass substrate and a spin coating method was applied with a spin speed of 1000, 2000 and 3000 rev/min. Changes in surface topography and roughness were observed. An atomic force microscope AFM Park System has been used....

  20. Amorphous silicon for thin-film transistors

    OpenAIRE

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addressable image sensor arrays, due to a new technology of low-cost, Iow-temperature processing overlarge areas. ... Zie: Abstract

  1. Fluxoid dynamics in superconducting thin film rings

    OpenAIRE

    Kirtley, J. R.; Tsuei, C. C.; Kogan, V. G.; Clem, J. R.; Raffy, H.; Li, Z. Z.

    2003-01-01

    We have measured the dynamics of individual magnetic fluxoids entering and leaving photolithographically patterned thin film rings of the underdoped high-temperature superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+\\delta}$, using a variable sample temperature scanning SQUID microscope. These results can be qualitatively described using a model in which the fluxoid number changes by thermally activated nucleation of a Pearl vortex in, and transport of the Pearl vortex across, the ring wall.

  2. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142. ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogen erated amorphous silicon(a-Si:H) * hydrogen erated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building-integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  3. Casimir force between atomically thin gold films

    OpenAIRE

    Boström, Mathias; Persson, Clas; Sernelius, Bo E.

    2013-01-01

    We have used density functional theory to calculate the anisotropic dielectric functions for ultrathin gold sheets (composed of 1, 3, 6, and 15 atomic layers). Such films are important components in nano-electromechanical systems. When using correct dielectric functions rather than bulk gold dielectric functions we predict an enhanced attractive Casimir-Lifshitz force (at most around 20%) between two atomically thin gold sheets. For thicker sheets the dielectric properties and the correspondi...

  4. The carbonization of thin polyaniline films

    Czech Academy of Sciences Publication Activity Database

    Morávková, Zuzana; Trchová, Miroslava; Exnerová, Milena; Stejskal, Jaroslav

    2012-01-01

    Roč. 520, č. 19 (2012), s. 6088-6094. ISSN 0040-6090 R&D Projects: GA AV ČR IAA400500905; GA AV ČR IAA100500902; GA ČR GAP205/12/0911 Institutional research plan: CEZ:AV0Z40500505 Institutional support: RVO:61389013 Keywords : polyaniline * thin films * infrared spectroscopy Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.604, year: 2012

  5. Modification of magnetic anisotropy induced by swift heavy ion irradiation in cobalt ferrite thin films

    International Nuclear Information System (INIS)

    The present study demonstrates the modification of magnetic anisotropy in cobalt ferrite (CoFe2O4) thin films induced by swift heavy ion irradiations of 200 MeV Ag-ion beams. The study reveals that both magnetizations and coercive field are sensitive to Ag-ions irradiation and to the fluences. The magnetic anisotropy enhanced at low fluence of Ag-ions due to domain wall pinning at defect sites created by ion bombardment and at high fluence, this magnetic anisotropy ceases and changes to isotropic behavior which is explained based on the significant structural and morphological changes. An X-ray absorption and x-ray magnetic circular dichroism studies confirms the inverse spinel structure of these compounds. - Highlights: • CoFe2O4 thin films have been deposited on Silicon substrate by pulsed laser deposition technique. • Swift heavy ion irradiation of thin films at three different fluences. • Studied the structural and magnetic properties of the samples. • XRD and Raman studies indicate strain in the films. • Observed perpendicular magnetic anisotropy

  6. Modification of magnetic anisotropy induced by swift heavy ion irradiation in cobalt ferrite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nongjai, Razia [Department of Applied Physics, Zakir Hussain College of Engineering & Technology, A.M.U., Aligarh 202002 (India); Khan, Shakeel, E-mail: skhanapad@gmail.com [Department of Applied Physics, Zakir Hussain College of Engineering & Technology, A.M.U., Aligarh 202002 (India); Ahmed, Hilal; Khan, Imran [Department of Applied Physics, Zakir Hussain College of Engineering & Technology, A.M.U., Aligarh 202002 (India); Annapoorni, S. [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Gautam, Sanjeev [Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Lin, Hong-Ji; Chang, Fan-Hsiu [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Hwa Chae, Keun [Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of); Asokan, K. [Material Science Division, Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2015-11-15

    The present study demonstrates the modification of magnetic anisotropy in cobalt ferrite (CoFe{sub 2}O{sub 4}) thin films induced by swift heavy ion irradiations of 200 MeV Ag-ion beams. The study reveals that both magnetizations and coercive field are sensitive to Ag-ions irradiation and to the fluences. The magnetic anisotropy enhanced at low fluence of Ag-ions due to domain wall pinning at defect sites created by ion bombardment and at high fluence, this magnetic anisotropy ceases and changes to isotropic behavior which is explained based on the significant structural and morphological changes. An X-ray absorption and x-ray magnetic circular dichroism studies confirms the inverse spinel structure of these compounds. - Highlights: • CoFe{sub 2}O{sub 4} thin films have been deposited on Silicon substrate by pulsed laser deposition technique. • Swift heavy ion irradiation of thin films at three different fluences. • Studied the structural and magnetic properties of the samples. • XRD and Raman studies indicate strain in the films. • Observed perpendicular magnetic anisotropy.

  7. Studies of two dimensional superconductor-normal metal hybrid thin films

    Science.gov (United States)

    Long, Zhenyi

    2005-11-01

    It has been predicted that simple metallic phase do NOT exist in two-dimensional electronic systems. Disorder that exists in two dimensions, no matter how small, can localize the electrons. Therefore, two-dimensional electronic systems could assume either a superconducting state or an insulating state. However, our studies have revealed an exotic two-dimensional electronic system that exhibits a combination of characters of a superconductor and a normal metal. These investigations have shed a light on a novel approach for the Superconductor-Normal Metal transition in two dimensions. The model systems we studied are hybrid superconductor (Pb)-normal metal (Ag) thin films, fabricated by quench condensation onto extremely cold substrates (TS ≅ 8 K). We have performed transport and tunneling spectroscopy measurements (down to 60 milli-Kelvin) to investigate the novel superconducting properties of the thin films. We have also utilized in situ STM to directly characterize the morphology of the hybrid thin films. With Pb thickness fixed, increasing Ag thickness drives down the superconducting transition temperature and energy gap in density of states of the hybrid films. Simultaneously, as Ag thickness increases, a linear DOS in the subgap region grows from the Fermi energy. According to quasiclassical theories, this subgap DOS implies that quasiparticles are localized in the normal metal for long enough time so that they become decoupled form the superconductor. The growth in the subgap DOS gives the DOS a hybrid metal-superconductor appearance that might signal a novel superconductor to metal transition in two dimensions.

  8. Factors affecting surface and release properties of thin PDMS films

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Junker, Michael Daniel; Skov, Anne Ladegaard

    2013-01-01

    -strain in the films which affect the overall performance of the films. The current research is directed towards investigating factors affecting the peel force and release of thin, corrugated polydimethylsiloxane films used in DEAP films. It has been shown that doping the PDMS films with small quantities of...

  9. Internal detection of surface plasmon coupled chemiluminescence during chlorination of potassium thin films

    Science.gov (United States)

    Becker, Felix; Krix, David; Hagemann, Ulrich; Nienhaus, Hermann

    2013-01-01

    The interaction of chlorine with potassium surfaces is a prototype reaction with a strong non-adiabatic energy transfer leading to exoemission and chemiluminescence. Thin film K/Ag/p-Si(111) Schottky diodes with 8 nm potassium on a 5-200 nm thick Ag layer are used as 2π-photodetectors for the chemiluminescence during chlorination of the K film at 110 K. The observed photocurrent shows a sharp maximum for small exposures and decreases gradually with the increasing chloride layer. The time dependence can be explained by the reaction kinetics, which is governed initially by second-order adsorption processes followed by an electric field-assisted diffusion. The detector current corresponds to a yield of a few percent of elementary charge per reacting chlorine molecule and is orders of magnitude larger than for external detection. The photoyield can be enhanced by increasing the Ag film thickness. For Ag films of 30 and 50 nm, the yield exhibits a maximum indicating surface plasmon coupled chemiluminescence. Surface plasmon polaritons in the Ag layer are excited by the reaction and decay radiatively into Si leading to the observed currents. A model calculation for the reverse process in attenuated total reflection is applied to explain the observed current yield maxima.

  10. Resistive switching in TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lin

    2011-10-26

    The continuing improved performance of the digital electronic devices requires new memory technologies which should be inexpensively fabricated for higher integration capacity, faster operation, and low power consumption. Resistive random access memory has great potential to become the front runner as the non volatile memory technology. The resistance states stored in such cell can remain for long time and can be read out none-destructively by a very small electrical pulse. In this work the typically two terminal memory cells containing a thin TiO{sub 2} layer are studied. Polycrystalline TiO{sub 2} thin films are deposited with atomic layer deposition and magnetron reactive sputtering processes, which are both physically and electrically characterized. The resistive switching cells are constructed in a metal/TiO{sub 2}/metal structure. Electroforming process initiate the cell from the beginning good insulator to a real memory cell to program the resistive states. Multilevel resistive bipolar switching controlled by current compliance is the common characteristic observed in these cells, which is potentially to be used as so called multi-bit memory cells to improve the memory capacity. With different top electrodes of Pt, Cu, Ag the resistive switching behaviors are studied. The switching behaviors are different depending on the top metal such as the minimum current compliance, the endurance of the programmed resistance states and the morphology change during the switching. The temperature dependence of different resistance states are investigated. A reduction of the activation energy and their possible conduction mechanisms is discussed on the base of the basic current conduction models. It is found that the resistance state transfers from semiconductor to metallic property with the reducing resistances. The calculated temperature coefficients of their metallic states on the Cu/TiO{sub 2}/Pt and Ag/TiO{sub 2}/Pt are very close to the reported literature data

  11. Titanium diffusion in gold thin films

    International Nuclear Information System (INIS)

    In the present study, diffusion phenomena in titanium/gold (Ti/Au) thin films occurring at temperatures ranging between 200 and 400 oC are investigated. The motivation is twofold: the first objective is to characterize Ti diffusion into Au layer as an effect of different heat-treatments. The second goal is to prove that the implementation of a thin titanium nitride (TiN) layer between Ti and Au can remarkably reduce Ti diffusion. It is observed that Ti atoms can fully diffuse through polycrystalline Au thin films (260 nm thick) already at temperatures as a low as 250 oC. Starting from secondary ion mass spectroscopy data, the overall diffusion activation energy ΔE = 0.66 eV and the corresponding pre-exponential factor D0 = 5 x 10-11 cm2/s are determined. As for the grain boundary diffusivity, both the activation energy range 0.54 gb 0Dgb0 = 1.14 x 10-8 cm2/s are obtained. Finally, it is observed that the insertion of a thin TiN layer (40 nm) between gold and titanium acts as an effective diffusion barrier up to 400 oC.

  12. The evolution and analysis of electrical percolation threshold in nanometer scale thin films deposited by electroless plating

    International Nuclear Information System (INIS)

    Research highlights: → The evolution of percolation threshold in electroless deposited Ag and Cu thin films was studied and ELD as a method for controllable percolation was analyzed. → It was observed that Ag and Cu thin films reach percolation threshold at the thicknesses of 35 nm and 30 nm, respectively. → It has been shown that the film resistivity varies according to power law. The critical exponents of 0.95 and 1.04 for Ag and Cu, respectively, were extracted. - Abstract: Extension of Ultra Large Scale Integration (ULSI) to a nanometer scale elevates the importance of interconnect resistivity in addition to conventional problems of coverage and electromigration. In this work we study electrical properties of ultra thin silver (Ag) and copper (Cu) films prepared by electroless deposition (ELD) in order to provide low resistivity, stable interconnect metallization technology and electrical contacts. The thin film is modeled by assuming metal conducting clusters separated by empty dielectric gaps. The continuity of the film or gap size is controlled by film thickness with respect to the growth mode of each metal. Analysis of the electrical properties of thin films at percolation threshold demonstrates that insulator-conductor transition occurs at the thickness about 35 nm and 30 nm for Ag and Cu films, respectively. At these thicknesses film roughness is constant, therefore, scattering on film walls remains unaffected and resistivity change can be associated with a percolation mechanism. The resistivity as a function of thickness varies according to power law and reaches saturation value of 2.5 μΩ cm and 4.3 μΩ cm at the thicknesses of 60 nm and 50 nm with critical exponents (τ) of 0.95 and 1.04 for Ag and Cu thin films, respectively. The X-ray Photoelectron Spectroscopy analysis has not detected contaminations or oxidation states. The strong dependence of the film surface roughness on metal ion concentration in solution was observed while the

  13. The evolution and analysis of electrical percolation threshold in nanometer scale thin films deposited by electroless plating

    Energy Technology Data Exchange (ETDEWEB)

    Sabayev, V., E-mail: vadimsab@eng.tau.ac.il [Department of Physical Electronics, Faculty of Engineering, Tel Aviv University Ramat Aviv, Tel Aviv 69978 (Israel); Croitoru, N.; Inberg, A.; Shacham-Diamand, Y. [Department of Physical Electronics, Faculty of Engineering, Tel Aviv University Ramat Aviv, Tel Aviv 69978 (Israel)

    2011-05-16

    Research highlights: {yields} The evolution of percolation threshold in electroless deposited Ag and Cu thin films was studied and ELD as a method for controllable percolation was analyzed. {yields} It was observed that Ag and Cu thin films reach percolation threshold at the thicknesses of 35 nm and 30 nm, respectively. {yields} It has been shown that the film resistivity varies according to power law. The critical exponents of 0.95 and 1.04 for Ag and Cu, respectively, were extracted. - Abstract: Extension of Ultra Large Scale Integration (ULSI) to a nanometer scale elevates the importance of interconnect resistivity in addition to conventional problems of coverage and electromigration. In this work we study electrical properties of ultra thin silver (Ag) and copper (Cu) films prepared by electroless deposition (ELD) in order to provide low resistivity, stable interconnect metallization technology and electrical contacts. The thin film is modeled by assuming metal conducting clusters separated by empty dielectric gaps. The continuity of the film or gap size is controlled by film thickness with respect to the growth mode of each metal. Analysis of the electrical properties of thin films at percolation threshold demonstrates that insulator-conductor transition occurs at the thickness about 35 nm and 30 nm for Ag and Cu films, respectively. At these thicknesses film roughness is constant, therefore, scattering on film walls remains unaffected and resistivity change can be associated with a percolation mechanism. The resistivity as a function of thickness varies according to power law and reaches saturation value of 2.5 {mu}{Omega} cm and 4.3 {mu}{Omega} cm at the thicknesses of 60 nm and 50 nm with critical exponents ({tau}) of 0.95 and 1.04 for Ag and Cu thin films, respectively. The X-ray Photoelectron Spectroscopy analysis has not detected contaminations or oxidation states. The strong dependence of the film surface roughness on metal ion concentration in solution

  14. Surface sensitive analysis of YBCO thin films

    International Nuclear Information System (INIS)

    Successful cleaning and polishing of a set of YBa2Cu3O7-δ(YBCO) thin films prepared by pulsed laser deposition (PLD) and chemical solution deposition (CSD) have been performed. The roughness of the films was reduced to a value of less than 5 nm, which opens a way to apply local surface sensitive techniques even on formerly very rough samples (some hundred nm peak-to-valley) such as CSD YBCO films. As one application flux lines of YBCO films were imaged with the omicron cryogenic SFM in MFM mode. The knowledge about geometry and distribution of artificial nanodefects in the interior of the film is crucial for further improvement of superconducting properties of these materials. The above mentioned polishing procedure has been further developed to prepare smooth low angle wedges of such samples. This offers the possibility to obtain depth dependent information with different surface sensitive scanning techniques. A high resolution electron backscattered diffraction image on the polished wedge of CSD YBCO sample reveals the homogeneous distribution of non superconducting BaHfO3 nanoparticles in the whole volume of the film

  15. Optical and electrical studies of ZnO thin films heavily implanted with silver ions

    International Nuclear Information System (INIS)

    Thin films of zinc oxide (ZnO) with the thickness of 200 nm have been deposited on quartz substrates by using ion-beam sputtering technique. Then Ag+ ions with the energy of 30 keV have been implanted into as-deposited ZnO films to the fluences in the range of (0.25-1.00)×1017 ions/cm2 to form ZnO:Ag composite layers with different concentrations of the silver impurity. The analysis of the microstructure has shown that the thickness of the ZnO film decreases, and the Ag dopant concentration tends to the saturation with increasing Ag implantation fluence. The ZnO:Ag composite layers reveal the optical selective absorption at the wavelength of the surface plasmon resonance that is typical for silver nanoparticles dispersed in the ZnO matrix. The red shift of the plasmon resonance peak from 480 to 500 nm is observed with the increase in the implantation fluence to 0.75×1017 Ag ions/cm2. Then the absorption peak position starts the backward motion, and the absorption intensity decreases with the subsequent increase in the implantation fluence. The non-monotonic dependence of the absorption peak position on the implantation fluence has been analyzed within of Maxwell Garnet theory and taking into account the strong sputtering of ZnO films during implantation. The ZnO:Ag composite layers exhibit the p-type conductivity indicating that a part of Ag+ ions is in the form of acceptor impurities implanted into the ZnO lattice

  16. Thin Film Deposition Using Energetic Ions

    Directory of Open Access Journals (Sweden)

    Stephan Mändl

    2010-07-01

    Full Text Available One important recent trend in deposition technology is the continuous expansion of available processes towards higher ion assistance with the subsequent beneficial effects to film properties. Nowadays, a multitude of processes, including laser ablation and deposition, vacuum arc deposition, ion assisted deposition, high power impulse magnetron sputtering and plasma immersion ion implantation, are available. However, there are obstacles to overcome in all technologies, including line-of-sight processes, particle contaminations and low growth rates, which lead to ongoing process refinements and development of new methods. Concerning the deposited thin films, control of energetic ion bombardment leads to improved adhesion, reduced substrate temperatures, control of intrinsic stress within the films as well as adjustment of surface texture, phase formation and nanotopography. This review illustrates recent trends for both areas; plasma process and solid state surface processes.

  17. Supramolecular structure of electroactive polymer thin films

    Science.gov (United States)

    Kornilov, V. M.; Lachinov, A. N.; Karamov, D. D.; Nabiullin, I. R.; Kul'velis, Yu. V.

    2016-05-01

    This paper presents the results of an experimental investigation of the supramolecular structure of polydiphenylenephthalide thin films that exhibit effects of resistive switching. The supramolecular structure of the polymer has been investigated using small-angle neutron scattering in conjunction with atomic force microscopy. It has been found that the internal structure of polymer films consists of structural elements in the form of spheroids. The sizes of the structural elements, which were obtained from the neutron scattering data and analysis of the atomic force microscopy images, correlate well with each other. A model of the formation of polymer layers has been proposed. The observed structural elements in polymer films are formed due to the association of macromolecules in the initial polymer solution.

  18. Magnetization relaxation in sputtered thin permalloy films

    Science.gov (United States)

    Oliveira, R. C.; Rodríguez-Suárez, R. L.; Aguiar, F. M. De; Rezende, S. M.; Fermin, J. R.; Azevedo, A.

    2004-05-01

    In order to understand the underlying phenomena of magnetization damping in metallic thin films, samples of permalloy films were grown by magnetron sputtering, and their 8.6-GHz ferromagnetic resonance linewidth ΔH has been measured as a function of the Permalloy (Py) film thickness t, at room temperature. We made samples of Py(t)/Si(001) and X/Py(t)/X/Si(001), with X=Pd (40Å), and Cr (25Å), with 20Å < t < 200Å. While ΔH scales with t-2 in the bare Py/Si series, it is shown that the damping behavior strongly depends on X in the sandwich samples.

  19. Sulfated cellulose thin films with antithrombin affinity

    Directory of Open Access Journals (Sweden)

    2009-11-01

    Full Text Available Cellulose thin films were chemically modified by in situ sulfation to produce surfaces with anticoagulant characteristics. Two celluloses differing in their degree of polymerization (DP: CEL I (DP 215–240 and CEL II (DP 1300–1400 were tethered to maleic anhydride copolymer (MA layers and subsequently exposed to SO3•NMe3 solutions at elevated temperature. The impact of the resulting sulfation on the physicochemical properties of the cellulose films was investigated with respect to film thickness, atomic composition, wettability and roughness. The sulfation was optimized to gain a maximal surface concentration of sulfate groups. The scavenging of antithrombin (AT by the surfaces was determined to conclude on their potential anticoagulant properties.

  20. Irradiation effects in YBCO thin films

    International Nuclear Information System (INIS)

    Oxide superconductors are very sensitive to electron or ion beam irradiation/implantation. In the past 19 years after high-Tc (HTc) superconductivity was discovered in these materials, many aspects of interactions of accelerated particles with HTc thin films were investigated. In this paper short review of most significant phenomena is given, especially of those important for electronic applications (controllable reduction of critical temperature and critical current density) and their applications for HTc film patterning, fabrication of HTc Josephson junctions and SQUIDs. Some new results in creating 3-d inhomogeneous regions in YBCO superconductors by ion irradiation/implantation and investigation of high harmonic generation in YBCO film modified by 100 keV oxygen ions are presented. (author)