Study of Ni/Si(1 0 0) solid-state reaction with Al addition

International Nuclear Information System (INIS)

Huang Yifei; Jiang Yulong; Ru Guoping; Li Bingzong

2008-01-01

The characteristics of Ni/Si(1 0 0) solid-state reaction with Al addition (Ni/Al/Si(1 0 0), Ni/Al/Ni/Si(1 0 0) and Al/Ni/Si(1 0 0)) is studied. Ni and Al films were deposited on Si(1 0 0) substrate by ion beam sputtering. The solid-state reaction between metal films and Si was performed by rapid thermal annealing. The sheet resistance of the formed silicide film was measured by four-point probe method. The X-ray diffraction (XRD) was employed to detect the phases in the silicide film. The Auger electron spectroscopy was applied to reveal the element profiles in depth. The influence of Al addition on the Schottky barrier heights of the formed silicide/Si diodes was investigated by current-voltage measurements. The experimental results show that NiSi forms even with the addition of Al, although the formation temperature correspondingly changes. It is revealed that Ni silicidation is accompanied with Al diffusion in Ni film toward the film top surface and Al is the dominant diffusion species in Ni/Al system. However, no Ni x Al y phase is detected in the films and no significant Schottky barrier height modulation by the addition of Al is observed

Effect of SiO2 addition and gamma irradiation on the lithium borate glasses

Science.gov (United States)

Raut, A. P.; Deshpande, V. K.

2018-01-01

The physical properties like density, glass transition temperature (Tg), and ionic conductivity of lithium borate (LB) glasses with SiO2 addition were measured before and after gamma irradiation. Remarkable changes in properties have been obtained in the physical properties of LB glasses with SiO2 addition and after gamma irradiation. The increase in density and glass transition temperature of LB glasses with SiO2 addition has been explained with the help of increase in density of cross linking due to SiO4 tetrahedra formation. The increase in ionic conductivity with SiO2 addition was explained with the help of ‘mixed glass former effect’. The increase in density and Tg of LB glasses with SiO2 addition after gamma irradiation has been attributed to fragmentation of bigger ring structure into smaller rings, which increases the density of cross linking and hence compaction. The exposure of gamma irradiation has lead to decrease in ionic conductivity of LB glasses with SiO2 addition. The atomic displacement caused by gamma irradiation resulted in filling of interstices and decrease in trapping sites. This explains the obtained decrease in ionic conductivity after gamma irradiation of glasses. The obtained results of effect of SiO2 addition and gamma irradiation on the density, Tg and ionic conductivity has been supported by FTIR results.

Effects of La and Ce Addition on the Modification of Al-Si Based Alloys

Directory of Open Access Journals (Sweden)

Emad M. Elgallad

2016-01-01

Full Text Available This study focuses on the effects of the addition of rare earth metals (mainly lanthanum and cerium on the eutectic Si characteristics in Al-Si based alloys. Based on the solidification curves and microstructural examination of the corresponding alloys, it was found that addition of La or Ce increases the alloy melting temperature and the Al-Si eutectic temperature, with an Al-Si recalescence of 2-3°C, and the appearance of post-α-Al peaks attributed to precipitation of rare earth intermetallics. Addition of La or Ce to Al-(7–13% Si causes only partial modification of the eutectic Si particles. Lanthanum has a high affinity to react with Sr, which weakens the modification efficiency of the latter. Cerium, however, has a high affinity for Ti, forming a large amount of sludge. Due to the large difference in the length of the eutectic Si particles in the same sample, the normal use of standard deviation in this case is meaningless.

Effect of ternary additions on the oxidation resistance of Ti5Si3

International Nuclear Information System (INIS)

Thom, A.J.; Akinc, M.; Iowa State Univ., Ames, IA

1995-01-01

Refractory intermetallic silicides are receiving increasing consideration for use as high temperature structural materials. Ti 5 Si 3 -based compositions are attractive due to their ability to incorporate a variety of interstitial ternary additions. These ternary additions present a unique opportunity to potentially tailor physical properties. Previous experimental work has shown that these additions significantly increase the otherwise poor oxidation resistance of undoped Ti 5 Si 3 above 700 C. Recent experimental work by the authors on the oxidation of small atom doped Ti 5 Si 3 is discussed. Interstitial additions of boron, carbon, and oxygen substantially improve the isothermal oxidation resistance of Ti 5 Si 3 at 1,000 C. In contrast, added nitrogen does not provide significant improvement. Even up to 1,306 C, interstitial oxygen imparts excellent oxidation resistance with a mass gain of 1.1 mg/cm 2 after 240 hours

Operation and Modulation of H7 Current Source Inverter with Hybrid SiC and Si Semiconductor Switches

DEFF Research Database (Denmark)

Wang, Weiqi; Gao, Feng; Yang, Yongheng

2018-01-01

This paper proposes an H7 current source inverter (CSI) consisting of a single parallel-connected silicon carbide (SiC) switch and a traditional silicon (Si) H6 CSI. The proposed H7 CSI takes the advantages of the SiC switch to maintain high efficiency, while significantly increasing the switching...... as an all-SiC-switch converter in terms of high performance and high efficiency with reduced DC inductance. It provides a cost-effective solution to addressing the efficiency issue of conventional CSI systems. Simulations and experiments are performed to validate the effectiveness of the proposed H7 CSI...

Effect of Si3N4 Addition on Oxidation Resistance of ZrB2-SiC Composites

Directory of Open Access Journals (Sweden)

Manab Mallik

2017-06-01

Full Text Available The oxidation behavior of ZrB2-20 vol % SiC and ZrB2-20 vol % SiC-5 vol % Si3N4 composites prepared by hot-pressing and subjected to isothermal exposure at 1200 or 1300 °C for durations of 24 or 100 h in air, as well as cyclic exposure at 1300 °C for 24 h, have been investigated. The oxidation resistance of the ZrB2-20 vol % SiC composite has been found to improve by around 20%–25% with addition of 5 vol % Si3N4 during isothermal or cyclic exposures at 1200 or 1300 °C. This improvement in oxidation resistance has been attributed to the formation of higher amounts of SiO2 and Si2N2O, as well as a greater amount of continuity in the oxide scale, because these phases assist in closing the pores and lower the severity of cracking by exhibiting self-healing type behavior. For both the composites, the mass changes are found to be higher during cyclic exposure at 1300 °C by about 2 times compared to that under isothermal conditions.

Detection of new southern SiO maser sources associated with Mira and symbiotic stars

International Nuclear Information System (INIS)

Allen, D.A.; Hall, P.J.; Norris, R.P.; Troup, E.R.; Wark, R.M.; Wright, A.E.

1989-01-01

In 1987 July the Parkes radio telescope was used to search for 43.12 GHz SiO maser emission from southern late-type stars. We report the discovery of such emission from 12 Mira-like systems, including the symbiotic star H1-36, and discuss the implications of our data for the symbiotic stars. We identify several M-type Mira variables with unusually low SiO/infrared flux ratios, but with present data are not able to discredit the correlation between the two parameters. In addition, we present line profiles for the only other known symbiotic maser, R Aqr, at unprecedented signal-to-noise ratio; these profiles show linearly polarized emission from several components of the source. (author)

Effect of Si addition to Al-8Mg alloy on the microstructure and thermo-physical properties of SiCp/Al composites prepared by pressureless infiltration

International Nuclear Information System (INIS)

Ren Shubin; He Xinbo; Qu Xuanhui; Humail, Islam S.; Li Yan

2007-01-01

Fifty-five volume percentage of SiCp/Al composites were prepared by pressureless infiltration to investigate the effect of Si addition to Al-8Mg alloy from 0 wt% to 18 wt% on the interfacial reaction between Al and SiC and the thermo-physical properties of the prepared composites. TEM and X-ray analysis showed that the degree of interfacial reaction decreased as the Si content increased, and that it ceased at 1273 K when the Si addition to the aluminum was greater than 12 wt%. The Si addition to Al-8Mg alloy reduced the CTE of the composites and increased their thermal conductivity (TC), but Si beyond 12 wt% led to the reduction of TC, though the CTE was lower. This is attributable to the combined action of the Si on the wettability, interfacial reaction and the TC and CTE of the matrix itself

Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

Science.gov (United States)

Halbig, Michael Charles; Singh, Mrityunjay

2015-01-01

Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

Energy Technology Data Exchange (ETDEWEB)

Bantaculo, Rolando, E-mail: rolandobantaculo@yahoo.com; Saitoh, Eiji; Miyamoto, Yu; Handa, Hiroyuki; Suemitsu, Maki

2011-11-01

A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH{sub 3}-CH{sub 3}) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si{sub 2}H{sub 6}) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.

Effects of boron addition on the formation of MoSi2 by combustion synthesis mode

International Nuclear Information System (INIS)

Feng Peizhong; Wu Jie; Islam, S.H.; Liu Weisheng; Niu Jinan; Wang Xiaohong; Qiang Yinghuai

2010-01-01

The combustion synthesis behavior of Mo-Si-B powder was investigated. Test specimens with nominal compositions including MoSi 2 , Mo(Si 0.975 B 0.025 ) 2 , Mo(Si 0.95 B 0.05 ) 2 , Mo(Si 0.925 B 0.075 ) 2 and Mo(Si 0.9 B 0.1 ) 2 were employed. The combustion mode, propagation velocity of combustion wave, combustion temperature and combustion product structure were studied. The results showed that the combustion wave propagated along a spiral trajectory till reaching the bottom of the compacts. The combustion temperature was increased by the addition of boron, to as high as 1922 K in the case of the Mo(Si 0.95 B 0.05 ) 2 sample. However, the flame-front propagation velocity decreased as a result of the addition of boron. The X-ray diffraction results showed that the combustion products of the Mo(Si 0.975 B 0.025 ) 2 and Mo(Si 0.9 B 0.1 ) 2 samples were composed of MoSi 2 with minor MoB. Those of the Mo(Si 0.95 B 0.05 ) 2 and Mo(Si 0.925 B 0.075 ) 2 samples were composed of MoSi 2 with minor MoB and MoB 2 . And traces of Mo 2 B 5 were identified in the Mo(Si 0.95 B 0.05 ) 2 sample.

Effect of SiC whisker addition on the microstructures and mechanical properties of Ti(C, N)-based cermets

International Nuclear Information System (INIS)

Wu, Peng; Zheng, Yong; Zhao, Yongle; Yu, Haizhou

2011-01-01

Ti(C, N)-based cermets with addition of SiC whisker (SiC w ) were prepared by vacuum sintering. The microstructures of the prepared cermets were investigated by using X-ray diffractometry (XRD) and scanning electron microscopy (SEM). Mechanical properties such as transverse rupture strength (TRS), fracture toughness (K IC ) and hardness (HRA) were also measured. It was found that the grain size of the cermets was affected by the SiC whisker addition. The cermets with 1.0 wt.% SiC whisker addition exhibited the smallest grain size. The porosities of the cermets increased with increasing SiC whisker additions. The addition of the SiC whisker had no influence on the phase constituents of the cermets. Compared with the cermets with no whisker addition, the highest TRS and fracture toughness for cermets with 1.0 wt.% SiC whisker addition increased by about 24% and 29%, respectively. The strengthening mechanisms were attributed to finer grain size, homogeneous microstructure and moderate thickness of rim phase. The toughening mechanisms were characterized by crack deflection, whisker bridging and whisker pulling-out.

A high performance Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel

Science.gov (United States)

Li, Wei; Liu, Hongxia; Wang, Shulong; Wang, Qianqiong; Chen, Shupeng

2017-06-01

In this paper, a new Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel (Ge_DUTFET) is proposed and investigated by Silvaco-Atlas simulation. The line tunneling perpendicular to channel and point tunneling parallel to channel simultaneously occur on both sides of the gate. The Ge is chosen as the source region material to increase the line tunneling current. The designed heterojunction between the Ge source and Si channel decreases the point tunneling barrier width to enhance the point tunneling current. And this heterojunction can also promote the Ge_DUTFET to occur point tunneling at the small gate voltage, which makes it obtain the smaller turn-on voltage. Furthermore, the Si0.5Ge0.5 buffer layer is also helpful for the enhancement of performance. The simulation results reveal that Ge_DUTFET has the better performance compared with the Si_DUTFET. The on-state current and average subthreshold swing of Ge_DUTFET are 1.11 × 10-5A/μm and 35.1mV/dec respectively. The max cut-off frequency (fT) and gain bandwidth product (GBW) are 26.6 GHz and 16.6 GHz respectively. The fT and GBW of the Ge_DUTFET are respectively increased by ∼27.4% and ∼84.3% compared with the Si_DUTFET.

Crystal growth and characterization of fluorescent SiC

DEFF Research Database (Denmark)

Wellmann, P.; Kaiser, M.; Hupfer, T.

-SiC co-doped with nitrogen and boron has been achieved [1][2]. The source is the rate determining step, and is expected to be determining the fluorescent properties by introducing dopants to the layer from the source. The optimization process of the polycrystalline, co-doped SiC:B,N source material...... and its impact on the FSPG epitaxial process, in particular the influence on the brightness of the is presented. In particular, the doping properties of the poly-SiC source material influence on the brightness of the fluorescent 6H-SiC. In addition we have investigated how the grain orientation...

The natural aging and precipitation hardening behaviour of Al-Mg-Si-Cu alloys with different Mg/Si ratios and Cu additions

Energy Technology Data Exchange (ETDEWEB)

Ding, Lipeng [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 China (China); Jia, Zhihong, E-mail: zhihongjia@cqu.edu.cn [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 China (China); Zhang, Zhiqing; Sanders, Robert E.; Liu, Qing [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 China (China); Yang, Guang [Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Centre for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049 (China)

2015-03-11

The natural aging and artificial aging behaviours of Al-Mg-Si-Cu alloys with different Mg/Si ratios and Cu additions were investigated using Vickers microhardness measurements, differential scanning calorimetry (DSC) analysis and transmission electron microscopy (TEM) characterisation. Excess Si and Cu additions enhanced the alloy hardening ability during natural (NA) and artificial aging (AA). Alloys with low Cu and high Si contents exhibited higher precipitation hardening than alloys rich in Mg during artificial aging. In contrast, the alloys with high amounts of Cu were less dependent on the Mg/Si ratio during precipitation hardening due to their similar aging kinetics. The main precipitate phases that contributed to the peak-aging hardness were the L, Q′ and β″ phases. In the over-aging conditions, the alloys rich in Mg and Cu had finer and more numerous precipitates than their Si-rich equivalents due to the preferential precipitation of the L phase. The combination of excess Mg and high Cu resulted in an alloy with a relatively low hardness in T4 temper and a relatively higher hardness after the paint baking cycle. Thus, this alloy has good potential for use in auto body panel applications.

Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(0 0 1)

International Nuclear Information System (INIS)

Huang, Shih-Hsien; Twan, Sheng-Chen; Cheng, Shao-Liang; Lee, Tu; Hu, Jung-Chih; Chen, Lien-Tai; Lee, Sheng-Wei

2014-01-01

Highlights: ► The presence of Al slows down the Ni 2 Si–NiSi phase transformation but significantly promotes the NiSi 2−x Al x formation. ► The behavior of phase transformation strongly depends on the Al concentration of the initial Ni 1−x Al x alloys. ► The Ni 0.91 Al 0.09 /Si system exhibits remarkably improved thermal stability, even after high temperature annealing for 1000 s. ► The relationship between microstructures, electrical property, and thermal stability of Ni(Al) silicides is discussed. -- Abstract: The influence of Al addition on the phase transformation and thermal stability of Ni silicides on (0 0 1)Si has been systematically investigated. The presence of Al atoms is found to slow down the Ni 2 Si–NiSi phase transformation but significantly promote the NiSi 2−x Al x formation during annealing. The behavior of phase transformation strongly depends on the Al concentration of the initial Ni 1−x Al x alloys. Compared to the Ni 0.95 Pt 0.05 /Si and Ni 0.95 Al 0.05 /Si system, the Ni 0.91 Al 0.09 /Si sample exhibits remarkably enhanced thermal stability, even after high temperature annealing for 1000 s. The relationship between microstructures, electrical property, and thermal stability of Ni silicides is discussed to elucidate the role of Al during the Ni 1−x Al x alloy silicidation. This work demonstrated that thermally stable Ni 1−x Al x alloy silicides would be a promising candidate as source/drain (S/D) contacts in advanced complementary metal–oxide-semiconductor (CMOS) devices

Kinetic Investigations of SiMn Slags From Different Mn Sources

Science.gov (United States)

Kim, Pyunghwa Peace; Tangstad, Merete

2018-03-01

The kinetics of MnO and SiO2 reduction were investigated for Silicomanganese (SiMn) slags using a Thermogravimetric analysis (TGA) between 1773 K and 1923 K (1500 °C and 1650 °C) under CO atmospheric pressure. The charge materials were based on Assmang ore and HC FeMn Slag. Rate models for MnO and SiO2 reduction were applied to describe the metal-producing rates, as shown by the following equations: r_{MnO} = k_{MnO} × A × ( {a_{MnO} - {a_{Mn} }/{K_{T }}} ) r_{{{SiO}2 }} = k_{SiO2} × A × ( {a_{{{SiO}2 }} - {a_{Si} }/{K_{T }}} ). The results show that the choice of raw materials in the charge considerably affected the reduction rate of MnO and SiO2. The highest reduction rate was found to be from charges using HC FeMn slag. The difference in the driving forces was insignificant among the SiMn slags, and the similar slag viscosities could not explain the different reduction rates. Instead, the difference is attributed to small amounts of sulfur and the amount of iron in the charge. In addition, the rate models were applicable to describe the reduction of MnO and SiO2 in SiMn slags.

Improved flux pinning behaviour in bulk MgB2 achieved by nano-SiO2 addition

International Nuclear Information System (INIS)

Rui, X F; Zhao, Y; Xu, Y Y; Zhang, L; Sun, X F; Wang, Y Z; Zhang, H

2004-01-01

Bulk MgB 2 with SiO 2 nanoparticles added has been synthesized using a simple solid-state reaction route. The lattice constant in the c direction increases with additive content due to a small amount of Si being doped into the lattice of the MgB 2 ; however, T c is almost fixed at 37.2 K. The addition of SiO 2 nanoparticles also improves the J c -H and H irr -T characteristics of MgB 2 when the additive content is lower than 7%. At 20 K and 1 T, J c for the sample with 7% additive content reaches 2.5 x 10 5 A cm -2 . Microstructural analysis reveals that a high density of MgSi 2 nanoparticles (10-50 nm) exists inside the MgB 2 grains, leading to the formation of a nanocomposite superconductor

Addition of iron for the removal of the {beta}-AlFeSi intermetallic by refining of {alpha}-AlFeSi phase in an Al-7.5Si-3.6Cu alloy

Energy Technology Data Exchange (ETDEWEB)

Belmares-Perales, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico); Zaldivar-Cadena, A.A., E-mail: azaldiva70@hotmail.com [Facultad de Ingenieria Civil, Departamento de Ecomateriales y Energia, Instituto de Ingenieria Civil, Av. Fidel Velasquez and Av. Universidad S/N, Cd. Universitaria, San Nicolas de los Garza, N.L. 66450 (Mexico)

2010-10-25

Addition of iron into the molten metal for the removal of the {beta}-AlFeSi intermetallic by refining of {alpha}-AlFeSi phase has been studied. Solidification conditions and composition determine the final microstructure and mechanical properties of a casting piece. It is known that increasing the iron content will produce an increasing of the {alpha}-AlFeSi and {beta}-AlFeSi phases. This phenomenon was confirmed with calculations made by Thermo-Calc{sup TM} software and validated with experimental results, however, the technique of iron addition in this study plays an important role on the solidification kinetics of these iron phases because the refining of {alpha}-AlFeSi and removal of {beta}-AlFeSi phases can be improved. Final results showed an improvement in mechanical properties by removal and refining of {beta}-AlFeSi and {alpha}-AlFeSi phases, respectively. This study shows a new method of removal of {beta}-AlFeSi that could be adopted in the aluminum smelting industry in aluminum alloys with a low cooling rate with a secondary dendritic spacing of about 37 {mu}m.

Addition of iron for the removal of the β-AlFeSi intermetallic by refining of α-AlFeSi phase in an Al-7.5Si-3.6Cu alloy

International Nuclear Information System (INIS)

Belmares-Perales, S.; Zaldivar-Cadena, A.A.

2010-01-01

Addition of iron into the molten metal for the removal of the β-AlFeSi intermetallic by refining of α-AlFeSi phase has been studied. Solidification conditions and composition determine the final microstructure and mechanical properties of a casting piece. It is known that increasing the iron content will produce an increasing of the α-AlFeSi and β-AlFeSi phases. This phenomenon was confirmed with calculations made by Thermo-Calc TM software and validated with experimental results, however, the technique of iron addition in this study plays an important role on the solidification kinetics of these iron phases because the refining of α-AlFeSi and removal of β-AlFeSi phases can be improved. Final results showed an improvement in mechanical properties by removal and refining of β-AlFeSi and α-AlFeSi phases, respectively. This study shows a new method of removal of β-AlFeSi that could be adopted in the aluminum smelting industry in aluminum alloys with a low cooling rate with a secondary dendritic spacing of about 37 μm.

High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

Energy Technology Data Exchange (ETDEWEB)

Thomas, Christopher; Portnoff, Samuel [Widetronix Corp., Ithaca, New York 14850 (United States); Spencer, M. G. [Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850 (United States)

2016-01-04

Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P{sup +}N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH{sup 3}{sub x}) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm{sup 2}. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm{sup 2}, fill factor of 0.86, and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 10{sup 5}–10{sup 6 }cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P{sup +}N junction structure can mitigate some of the negative effects.

Compositional homogeneity in a medical-grade stainless steel sintered with a Mn–Si additive

International Nuclear Information System (INIS)

Salahinejad, E.; Hadianfard, M.J.; Ghaffari, M.; Mashhadi, Sh. Bagheri; Okyay, A.K.

2012-01-01

In this paper, chemical composition uniformity in amorphous/nanocrystallization medical-grade stainless steel (ASTM ID: F2581) sintered with a Mn–Si additive was studied via scanning electron microscopy, energy dispersive X-ray spectroscopy, and transmission electron microscopy. The results show that as a result of sintering at 1000 °C, no dissociation of Mn–Si additive particles embedded in the stainless steel matrix occurs. In contrast, sintering at 1050 °C develops a relatively homogeneous microstructure from the chemical composition viewpoint. The aforementioned phenomena are explained by liquation of the Mn–Si eutectic additive, thereby wetting of the main powder particles, penetrating into the particle contacts and pore zones via capillary forces, and providing a path of high diffusivity. - Highlights: ► Local chemical composition in a sintered stainless steel was studied. ► Due to sintering at 1000 °C, no dissociation of additive particles occurs. ► Sintering at 1050 °C provides a uniform chemical composition.

Silicon-photonics light source realized by III-V/Si grating-mirror laser

DEFF Research Database (Denmark)

Chung, Il-Sug; Mørk, Jesper

2010-01-01

waveguide are made in the Si layer of a silicon-on-insulator wafer by using Si-electronics-compatible processing. The HCG works as a highly-reflective mirror for vertical resonance and at the same time routes light to the in-plane output waveguide. Numerical simulations show superior performance compared...... to existing silicon light sources....

Improved thermal stability and oxidation resistance of Al–Ti–N coating by Si addition

International Nuclear Information System (INIS)

Chen, Li; Yang, Bing; Xu, Yuxiang; Pei, Fei; Zhou, Liangcai; Du, Yong

2014-01-01

Addition of Si is very effective in upgrading the machining performance and thermal properties of Al–Ti–N coating. Here, we concentrate on the thermal stability and oxidation resistance of Al–Ti–Si–N coating. Alloying with Si favors the growth of wurtzite phase, and thereby causes a drop in hardness from ∼ 34.5 to 28.7 GPa. However, Si-containing coating retards the formation of w-AlN during thermal annealing, and thereby behaves a high hardness value of ∼ 31.3 GPa after annealing at T a = 1100 °C. After 10 h exposure in air at 850 °C, Al–Ti–N coating is fully oxidized. Incorporation of Si significantly improves the oxidation resistance of Al–Ti–N due to the combined effects with the promoted formation of Al-oxide rich top-scale and retarded transformation of anatase (a-) TiO 2 into rutile (r-) TiO 2 , where only ∼ 1.43 μm oxide scale is shown after oxidation at 1100 °C for 15 h. Noticeable is that the worst oxidation resistance of Al–Ti–Si–N coating in the temperature range from 800 to 1100 °C is obtained at 950 °C with oxide scale of ∼ 1.76 μm due to the fast formation of r-TiO 2 . Additionally, a pre-oxidation at 1000 °C has a positive effect on the oxidation resistance of Al–Ti–Si–N coating, which is attributed to the formation of Al-oxide rich top-scale, and thus inhibits the outward diffusion of metal atoms and inward diffusion of O. - Highlights: • Si as a substitutional solid solution and via the formation of a-Si 3 N 4 coexists. • Si addition favors the growth of wurtzite phase and causes a decreased hardness. • Alloying with Si improves the oxidation resistance of AlTiN. • AlTiSiN behaves the worst oxidation resistance at 950 °C from 800 to 1100 °C. • A pre-oxidation at 1000 °C improves the oxidation resistance of AlTiSiN coating

Abrasive wear of BA1055 bronze with additives of Si, Cr, Mo and/or W

Directory of Open Access Journals (Sweden)

B. P. Pisarek

2008-10-01

Full Text Available Aluminium bronzes belong to the high-grade constructional materials applied on the put under strongly load pieces of machines, aboutgood sliding, resistant properties on corrosion both in the cast state how and after the thermal processing. It moves to them Cr and Si in the aim of the improvement of their usable proprieties. The additions Mo and/or W were not applied so far. It was worked out therefore the new kind of bronzes casting including these elements. Make additions to the Cu-Al-Fe-Ni bronze of Si, Cr, Mo and/or W in the rise of these properties makes possible. The investigations of the surface distribution of the concentration of elements in the microstructure of the studied bronze on X-ray microanalyzer were conducted. It results from conducted investigations, that in the aluminium bronze BA1055 after makes additions Si, Cr, Mo and/or W the phases of the type κFe, κNi crystallize, probably as complex silicides. Elements such as: Fe and Si dissolve first of all in phases κ, in smaller stage in the matrix of the bronze; Mn, Ni and W they dissolve in matrix and phases κ. It dissolves Cr and Mo in the larger stage in phases κ than in the matrix. The sizes of the abrasive wear were compared in the state cast multicomponentnew casting Cu-Al-Fe-Ni bronzes with the additives Cr, Mo or W with the wear of the bronze CuAl10Fe5Ni5Si. The investigations of thewear were conducted on the standard device. It results from conducted investigations, that make additions to bronze BA1055 of the additives of Si, Cr, Mo, and/or W it influences the rise of the hardness (HB of the bronze in the cast state, in the result of the enlarged quantity separates of hard phases κ, and in the consequence the decrease of the abrasive wear. The addition of molybdenum made possible obtainment of the microhardness of the phase α and γ 2 on the comparable level. From the microstructure of the bronze CuAl10Fe5Ni5MoSi is characterizes the smallest abrasive wear among

Effect of addition of V and C on strain recovery characteristics in Fe-Mn-Si alloy

International Nuclear Information System (INIS)

Lin Chengxin; Wang Guixin; Wu Yandong; Liu Qingsuo; Zhang Jianjun

2006-01-01

Shape recoverable strain, recovery stress and low-temperature stress relaxation characteristics in an Fe-17Mn-5Si-10Cr-4Ni (0.08C) alloy and an Fe-17Mn-2Cr-5Si-2Ni-1V (0.23C) alloy have been studied by means of X-ray diffraction, transmission electron microscopy and measurement of recoverable strain and recovery stress. The amount of stress-induced ε martensite under tensile deformation at room temperature, recoverable strain and recovery stress are increased obviously with addition V and C in Fe-Mn-Si alloy, which is owing to the influence of addition V and C on strengthening austenitic matrix. Addition of V and C in Fe-Mn-Si alloy is evidently effective to reduce the degree of low-temperature stress relaxation, for the dispersed VC particles 50-180 nm in size precipitated during annealing restrain the stress induced martensitic transformation

Effect of sintering temperature on structure of C-B4C-SiC composites with silicon additive

International Nuclear Information System (INIS)

Wu Lijun; Academia Sinica, Shenyang; Huang Qizhong; Yang Qiaoqin; Zhao Lihu; Xu Zhongyu

1996-01-01

Carbon materials possess good electric conductivity, heat conductivity, corrosion-resistance, self-lubrication and hot-shocking resistance, and are easily machined. However, they have low mechanical strength, and are easily oxidized in air at high temperature. On the contrary, ceramic materials have high mechanical strength and hardness, and have good wear-resistance and oxidation-resistance. However, they have the shortages of poor thermal-shock resistance lubrication, and are difficult to machine. Therefore, carbon/ceramic composites with the advantages of both carbon and ceramic materials have been widely studied in the recent years. Huang prepared C-B 4 C-SiC composites with the free sintering method and the hot pressing method, and studied the effects of Si, Al, Al 2 O 3 , Ni and Ti additives on the properties of the composites. The results showed that these additives could improve the properties of the composites. Zhao et al. studies the structure of C-B 4 C-SiC composites with Si additive sintered at 2,000 C and found two c-center monoclinic phases. In this paper, the authors discussed the effect of the sintering temperature on the structure of C-B 4 C-SiC composites with Si additive by means of transmission electron microscope (TEM) and x-ray diffractometer (XRD)

Spatially Controlled Delivery of siRNAs to Stem Cells in Implants Generated by Multi-Component Additive Manufacturing

DEFF Research Database (Denmark)

Andersen, Morten Østergaard; Le, Dang Quang Svend; Chen, Muwan

2013-01-01

Additive manufacturing is a promising technique in tissue engineering, as it enables truly individualized implants to be made to fit a particular defect. As previously shown, a feasible strategy to produce complex multicellular tissues is to deposit different small interfering RNA (siRNA) in porous...... implants that are subsequently sutured together. In this study, an additive manufacturing strategy to deposit carbohydrate hydrogels containing different siRNAs is applied into an implant, in a spatially controlled manner. When the obtained structures are seeded with mesenchymal stem (stromal) cells......, the selected siRNAs are delivered to the cells and induces specific and localized gene silencing. Here, it is demonstrated how to replicate part of a patient's spinal cord from a computed tomography scan, using an additive manufacturing technique to produce an implant with compartmentalized si...

A simulation study of 6H-SiC Schottky barrier source/drain MOSFET

International Nuclear Information System (INIS)

Wang Yuan; Zhang Yimen; Zhang Yuming; Tang Xiaoyan

2003-01-01

A novel SiC metal-oxide-semiconductor field-effect transistor (SiC SBSD-MOSFET) with Schottky barrier contacts for source and drain is presented in this paper. This kind of device gives a fabrication advantage of avoiding the steps of ion implantation and annealing at high temperatures of the conventional SiC MOSFET. Also it has no problems of crystal damage caused by ion implantation and low activation rate of implanted atoms. The operational mechanism of this device is analyzed and its characteristics are comparable to the conventional SiC MOSFET from the simulation with MEDICI. The effects of different metal workfunctions, oxide thickness, and gate length on the device performance are discussed

Microstructural characterisation of Al-Si cast alloys containing rare earth additions

Science.gov (United States)

Elgallad, E. M.; Ibrahim, M. F.; Doty, H. W.; Samuel, F. H.

2018-05-01

This paper presents a thorough study on the effect of rare earth elements, specifically La and Ce, on the microstructure characteristics of non-modified and Sr-modified A356 and A413 alloys. Several alloys were prepared by adding 1% La and 1% Ce either individually or in combination. Microstructural characterisation was carried out using optical microscopy, scanning electron microscopy and electron probe microanalysis as well as differential scanning calorimetry (DSC) analysis. The results showed that the individual and combined additions of La and Ce did not bring about any modification or even refinement in the eutectic Si structure. Moreover, these additions were found to negate the modification effect of Sr, particularly in the presence of La. The A356 and A413 alloys containing La and/or Ce displayed high phase volume fractions owing to the formation of Al-Si-La/Ce/(La,Ce) and Al-Ti-La/Ce intermetallic phases. DSC analysis revealed that the formation temperatures of these phases varied from 560 to 568 °C and 568 to 574 °C, respectively. This analysis also showed that the addition of La and Ce whether individually or in combination resulted in a depression in the eutectic temperature and a considerable increase in the solidification range, particularly for the A413 alloy.

The Relationship between Nanocluster Precipitation and Thermal Conductivity in Si/Ge Amorphous Multilayer Films: Effects of Cu Addition

Directory of Open Access Journals (Sweden)

Ahmad Ehsan Mohd Tamidi

2016-01-01

Full Text Available We have used a molecular dynamics technique to simulate the relationship between nanocluster precipitation and thermal conductivity in Si/Ge amorphous multilayer films, with and without Cu addition. In the study, the Green-Kubo equation was used to calculate thermal conductivity in these materials. Five specimens were prepared: Si/Ge layers, Si/(Ge + Cu layers, (Si + Cu/(Ge + Cu layers, Si/Cu/Ge/Cu layers, and Si/Cu/Ge layers. The number of precipitated nanoclusters in these specimens, which is defined as the number of four-coordinate atoms, was counted along the lateral direction of the specimens. The observed results of precipitate formation were considered in relation to the thermal conductivity results. Enhancement of precipitation of nanoclusters by Cu addition, that is, densification of four-coordinate atoms, can prevent the increment of thermal conductivity. Cu dopant increases the thermal conductivity of these materials. Combining these two points, we concluded that Si/Cu/Ge is the best structure to improve the conversion efficiency of the Si/Ge amorphous multilayer films.

Role of cerium, lanthanum, and strontium additions in an Al-Si-Mg (A356) alloy

Energy Technology Data Exchange (ETDEWEB)

Nabawy, Ahmed M.; Samuel, Agnes M.; Samuel, Fawzy H. [Universite du Quebec, Chicoutimi (Canada). Dept. des Sciences Appliquees; Alkahtani, Saleh A.; Abuhasel, Khaled A. [Salman Bin Abdulaziz Univ., Riyadh (Saudi Arabia). Mechanical Engineering Dept.

2016-05-15

The effects of individual and combined additions of cerium (Ce), lanthanum (La), and strontium (Sr) on the eutectic modification and solidification characteristics of an Al-Si-Mg (A356) aluminum alloy were investigated using optical microscopy and thermal analysis techniques. Addition of Ce, La, and Sr resulted in different depression levels of the eutectic nucleation temperature and eutectic growth undercooling, generating modified eutectic structures exhibiting different levels of modification. Microstructural results showed that the best modification levels using individual additions were achieved by Sr which produced a fine fibrous eutectic structure, followed by La, which produced a refined lamellar structure, with Ce providing the lowest level of modification. On the other hand, a combined addition of Ce and Sr provided the highest modification level, with the production of a very fine fibrous eutectic silicon structure. In general, the addition of Sr helped to further increase the refinement obtained in the alloys containing La or Ce + La additions. In the latter alloy, the main intermetallic phases observed were La(Al,Si){sub 2} and Al{sub 20}(La,Ce)Ti{sub 2}Si. The improved modification levels were found to be proportional to the depression in the eutectic nucleation temperature and the eutectic growth undercooling. A high cooling rate also improved the modification level by at least one level.

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

Science.gov (United States)

Abe, Y.; Umeda, T.; Okamoto, M.; Kosugi, R.; Harada, S.; Haruyama, M.; Kada, W.; Hanaizumi, O.; Onoda, S.; Ohshima, T.

2018-01-01

We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

Influence of CaCO3 and SiO2 additives on magnetic properties of M-type Sr ferrites

Science.gov (United States)

Huang, Ching-Chien; Jiang, Ai-Hua; Hung, Yung-Hsiung; Liou, Ching-Hsuan; Wang, Yi-Chen; Lee, Chi-Ping; Hung, Tong-Yin; Shaw, Chun-Chung; Kuo, Ming-Feng; Cheng, Chun-Hu

2018-04-01

An experiment was carried out to investigate the influence of CaCO3 and SiO2 additives on the magnetic and physical properties of M-type Sr ferrites by changing experimental parameters such as the additive composition and Ca/Si ratio. Specimens were prepared by conventional ceramic techniques. It was found that the magnetic properties (Br = 4.42 kG, iHc = 3.32 kOe and (BH)max = 4.863 MGOe) were considerably improved upon adding CaCO3 = 1.1% and SiO2 = 0.4 wt% together with Co3O4, and the mechanical properties thereof were acceptable for motor applications. It was revealed that CaCO3 and SiO2 additives led to an upswing in the magnetic properties via the enhancement of uniform grain growth, particle alignment, and the densification of Sr ferrite.

Effects of Mn addition on microstructure and hardness of Al-12.6Si alloy

Science.gov (United States)

Biswas, Prosanta; Patra, Surajit; Mondal, Manas Kumar

2018-03-01

In this work, eutectic Al-12.6Si alloy with and without manganese (Mn) have been developed through gravity casting route. The effect of Mn concentration (0.0 wt.%, 1 wt%, 2 wt% and 3 wt%) on microstructural morphology and hardness property of the alloy has been investigated. The eutectic Al-12.6 Si alloy exhibits the presence of combine plate, needle and rod-like eutectic silicon phase with very sharp corners and coarser primary silicon particles within the α-Al phase. In addition of 1wt.% of Mn in the eutectic Al-12.6Si alloy, sharp corners of the primary Si and needle-like eutectic Si are became blunt and particles size is reduced. Further, increase in Mn concentration (2.0 wt.%) in the Al-12.6Si alloy, irregular plate shape Al6(Mn,Fe) intermetallics are formed inside the α-Al phase, but the primary and eutectic phase morphology is similar to the eutectic Al-12.6Si alloy. The volume fraction of Al6(Mn,Fe) increases and Al6(Mn,Fe) particles appear as like chain structure in the alloy with 3 wt.% Mn. An increase in Mn concentration in the Al-12.6Si alloys result in the increase in bulk hardness of the alloy as an effects of microstructure modification as well as the presence of harder Al6(Mn,Fe) phase in the developed alloy.

Effect of Gd–Ca combined additions on the microstructure and creep properties of Mg–7Al–1Si alloys

International Nuclear Information System (INIS)

Liu, Jian; Wang, Wuxiao; Zhang, Sha; Zhang, Dongjie; Zhang, Haiyan

2015-01-01

Highlights: • The effect of compound addition of Ca and Gd on the microstructure and creep properties of Mg–7Al–1Si alloys was investigated. • After adding 1 wt.% of (Ca + Gd), the creep strain and steady-state creep rate were reduced by about 80% and 84%, respectively. • After adding 1 wt.% of (Ca + Gd), the creep properties of Mg–7Al–1Si alloys were superior to that containing single Gd additive. • The improvement of creep properties after compound addition of Gd and Ca is a result of multiple factors. - Abstract: The microstructure and creep properties of Mg–7Al–1Si alloys with combined additions of alkaline earth element Ca and rare earth element (RE) Gd were investigated using scanning electron microscope (SEM), optical microscope, energy dispersive spectrometer (EDS), X-ray diffraction (XRD), and compressive creep tests. It was found that the combined additions of Ca and Gd contributed to grain refinement, modification of the morphology of coarse Chinese script Mg 2 Si phase, and reduction of β-Mg 17 Al 12 content. Mg–7Al–1Si alloys containing 1 wt.% compound modifier (0.5 wt.% Gd + 0.5 wt.% Ca) exhibited the minimal steady-state creep rate, and were even superior to Mg–7Al–1Si alloys containing single Gd addition. The great improvement of creep properties is mainly attributed to the reduction in the amount and continuity of eutectic β-Mg 17 Al 12 phase, morphology modification of Mg 2 Si phase, solution strengthening of Gd, as well as the formation of thermally stable intermetallic Al 2 Gd, which acted as an effective barrier against grain boundary sliding and dislocation movement

Bremsstrahlung and Ion Beam Current Measurements with SuSI ECR Ion Source

International Nuclear Information System (INIS)

Ropponen, T.

2012-01-01

This series of slides presents: the Superconducting Source for Ions (SuSI), the X-ray measurement setup, the different collimation schemes, the flat B operation versus B(min) operation, and the impact of tuning ∇B while keeping fixed field profile

Analysis of Si/SiGe Heterostructure Solar Cell

Directory of Open Access Journals (Sweden)

Ashish Kumar Singh

2014-01-01

Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

K-capture by Al-Si based Additives in an Entrained Flow Reactor

DEFF Research Database (Denmark)

Wang, Guoliang; Jensen, Peter Arendt; Wu, Hao

2016-01-01

A water slurry, consisting of KCl and Al-Si based additives (kaolin and coal fly ash) was fed into an entrained flow reactor (EFR) to study the K-capturing reaction of the additives at suspension-fired conditions. Solid products collected from the reactor were analysed with respect to total...... of KCl to K-aluminosilicate decreased. When reaction temperature increased from 1100 °C to 1450 °C, the conversion of KCl does not change significantly, which differs from the trend observed in fixed-bed reactor....

The influence of Ni addition and hot-extrusion on the microstructure and tensile properties of Al–15%Mg2Si composite

International Nuclear Information System (INIS)

Emamy, M.; Khodadadi, M.; Honarbakhsh Raouf, A.; Nasiri, N.

2013-01-01

Highlights: ► Ni content on the microstructure and tensile properties of Al–Mg 2 Si composite. ► Ni changed the size of primary Mg 2 Si from 42 μm to 17 μm. ► Higher UTS and elongation values obtained by addition of 5 wt% Ni. ► Fracture behavior changed from brittle to ductile by Ni addition and extrusion. - Abstract: The effects of nickel addition and hot-extrusion on the microstructure and tensile properties of in situ Al–15%Mg 2 Si composite specimens have been investigated. Al–15%Mg 2 Si composite ingots were prepared by an in situ process and different amounts of nickel (0.1, 0.3, 0.5, 1.0, 3.0 and 5.0 wt% Ni) were added to the remelted composite. Optical microscopy (OM) and scanning electron microscopy (SEM) indicated that Ni addition changes the morphology of both primary and eutectic Mg 2 Si phases and decreases the size of primary Mg 2 Si particles from 42 μm to 17 μm. Hot-extrusion was found to be powerful in breaking the eutectic network and changing the size and morphology of pseudo-eutectic Mg 2 Si phase. The results obtained from tensile testing revealed that both Ni addition and hot-extrusion process improve ultimate tensile strength (UTS) and elongation values. Fracture surface examinations revealed a transition from brittle fracture mode in as-cast composite to ductile fracture in hot-extruded composite after Ni addition. This can be attributed to the changes in size and morphology of primary and eutectic Mg 2 Si phases and also the formation of more and finer α-Al phase

Improvements in mechanical properties in SiC by the addition of TiC particles

International Nuclear Information System (INIS)

Wei, G.C.; Becher, P.F.

1984-01-01

Silicon carbide ceramics containing up to 24.6 vol% dispersed TiC particles yielded fully dense composites by hot-pressing at 2000 0 C with 1 wt% Al and 1 wt% C added. The microstructure consists of fine TiC particles in a fine-grained SiC matrix. Addition of TiC particles increases the critical fracture toughness of SiC (to approx. =6 MPa /SUP ./ m /SUP 1/2/ at 24.6 vol% TiC) and yields high flexure strength (greater than or equal to 680 MPa), with both properties increasing with increasing volume fraction of TiC. The strengths at high temperatures are also improved by the TiC additions. Observations of the fracture path indicate that the improved toughness and strength are a result of crack deflection by the TiC particles

Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:H

Energy Technology Data Exchange (ETDEWEB)

Molpeceres, C. [Centro Laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3, 28031 Madrid (Spain)], E-mail: carlos.molpeceres@upm.es; Lauzurica, S.; Garcia-Ballesteros, J.J.; Morales, M.; Guadano, G.; Ocana, J.L. [Centro Laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3, 28031 Madrid (Spain); Fernandez, S.; Gandia, J.J. [Dept. de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda, Complutense 22, 28040 Madrid (Spain); Villar, F.; Nos, O.; Bertomeu, J. [CeRMAE Dept. Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona (Spain)

2009-03-15

Lasers are essential tools for cell isolation and monolithic interconnection in thin-film-silicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCOs), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However, material ablation with minimum debris and small heat affected zone is one of the main difficulty is to achieve, to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of diode-pumped solid-state (DPSS) laser sources. We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process-quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si:H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial laser sources as an alternative to standard backscribing process in device fabrication.

Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:H

International Nuclear Information System (INIS)

Molpeceres, C.; Lauzurica, S.; Garcia-Ballesteros, J.J.; Morales, M.; Guadano, G.; Ocana, J.L.; Fernandez, S.; Gandia, J.J.; Villar, F.; Nos, O.; Bertomeu, J.

2009-01-01

Lasers are essential tools for cell isolation and monolithic interconnection in thin-film-silicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCOs), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However, material ablation with minimum debris and small heat affected zone is one of the main difficulty is to achieve, to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of diode-pumped solid-state (DPSS) laser sources. We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process-quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si:H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial laser sources as an alternative to standard backscribing process in device fabrication.

Effect of Rapid Solidification and Addition of Cu3P on the Mechanical Properties of Hypereutectic Al-Si Alloys

OpenAIRE

Suárez-Rosales,Miguel Ángel; Pinto-Segura,Raúl; Palacios-Beas,Elia Guadalupe; Hernández-Herrera,Alfredo; Chávez-Alcalá,José Federico

2016-01-01

The combined processes; rapid solidification, addition of Cu3P compound and heat treatments to improve the mechanical properties of the hypereutectic Al-13Si, Al-20Si and Al-20Si-1.5Fe-0.7Mn alloys (in wt. %) was studied. Optical microscopy and scanning electron microscopy were used to characterize the microstructures. The mechanical properties were evaluated by tensile tests. It was found that the cooling rate (20-50°C/s) used to solidify the alloys plus the addition of Cu3P compound favored...

Synthesis of high-performance Li2FeSiO4/C composite powder by spray-freezing/freeze-drying a solution with two carbon sources

Science.gov (United States)

Fujita, Yukiko; Iwase, Hiroaki; Shida, Kenji; Liao, Jinsun; Fukui, Takehisa; Matsuda, Motohide

2017-09-01

Li2FeSiO4 is a promising cathode active material for lithium-ion batteries due to its high theoretical capacity. Spray-freezing/freeze-drying, a practical process reported for the synthesis of various ceramic powders, is applied to the synthesis of Li2FeSiO4/C composite powders and high-performance Li2FeSiO4/C composite powders are successfully synthesized by using starting solutions containing both Indian ink and glucose as carbon sources followed by heating. The synthesized composite powders have a unique structure, composed of Li2FeSiO4 nanoparticles coated with a thin carbon layer formed by the carbonization of glucose and carbon nanoparticles from Indian ink. The carbon layer enhances the electrochemical reactivity of the Li2FeSiO4, and the carbon nanoparticles play a role in the formation of electron-conducting paths in the cathode. The composite powders deliver an initial discharge capacity of 195 and 137 mAh g-1 at 0.1 C and 1 C, respectively, without further addition of conductive additive. The discharge capacity at 1 C is 72 mAh g-1 after the 100th cycle, corresponding to approximately 75% of the capacity at the 2nd cycle.

Comparison Study on Additive Manufacturing (AM) and Powder Metallurgy (PM) AlSi10Mg Alloys

Science.gov (United States)

Chen, B.; Moon, S. K.; Yao, X.; Bi, G.; Shen, J.; Umeda, J.; Kondoh, K.

2018-02-01

The microstructural and mechanical properties of AlSi10Mg alloys fabricated by additive manufacturing (AM) and powder metallurgy (PM) routes were investigated and compared. The microstructures were examined by scanning electron microscopy assisted with electron-dispersive spectroscopy. The crystalline features were studied by x-ray diffraction and electron backscatter diffraction. Room-temperature tensile tests and Vickers hardness measurements were performed to characterize the mechanical properties. It was found that the AM alloy had coarser Al grains but much finer Si precipitates compared with the PM alloy. Consequently, the AM alloy showed more than 100% increment in strength and hardness compared with the PM alloy due to the presence of ultrafine forms of Si, while exhibiting moderate ductility.

High-current and low acceleration voltage arsenic ion implanted polysilicon-gate and source-drain electrode Si mos transistor

International Nuclear Information System (INIS)

Saito, Yasuyuki; Sugimura, Yoshiro; Sugihara, Michiyuki

1993-01-01

The fabrication process of high current arsenic (As) ion implanted polysilicon (Si) gate and source drain (SD) electrode Si n-channel metal oxide-semiconductor field effect transistor (MOSFET) was examined. Poly Si film n-type doping was performed by using high current (typical current: 2mA) and relatively low acceleration voltage (40keV) As ion implantation technique (Lintott series 3). It was observed that high dose As implanted poly Si films as is show refractoriness against radical fluorine excited by microwave. Using GCA MANN4800 (m/c ID No.2, resist: OFPR) mask pattern printing technique, the high current As ion implantation technique and radical fluorine gas phase etching (Chemical dry etching: CDE) technique, the n-channel Poly Si gate (ρs = ≅100Ω/□) enhancement MQSFETs(ρs source drain = ≅50Ω/□, SiO 2 gate=380 angstrom) with off-leak-less were obtained on 3 inch Czochralski grown 2Ωcm boron doped p type wafers (Osaka titanium). By the same process, a 8 bit single chip μ-processor with 26MHz full operation was performed

Temperature dependent IDS–VGS characteristics of an N-channel Si tunneling field-effect transistor with a germanium source on Si(110) substrate

International Nuclear Information System (INIS)

Liu Yan; Yan Jing; Wang Hongjuan; Han Genquan

2014-01-01

We fabricated n-type Si-based TFETs with a Ge source on Si(110) substrate. The temperature dependent I DS –V GS characteristics of a TFET formed on Si(110) are investigated in the temperature range of 210 to 300 K. A study of the temperature dependence of I Leakage indicates that I Leakage is mainly dominated by the Shockley-Read-Hall (SRH) generation—recombination current of the n + drain—Si substrate junction. I ON increases monotonically with temperature, which is attributed to a reduction of the bandgap at the tunneling junction and an enhancement of band-to-band tunneling rate. The subthreshold swing S for trap assisted tunneling (TAT) current and band-to-band tunneling (BTBT) current shows the different temperature dependence. The subthreshold swing S for the TAT current degrades with temperature, while the S for BTBT current is temperature independent. (semiconductor devices)

Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

Science.gov (United States)

Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

2015-11-11

Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

Influence of Li₂Sb Additions on Microstructure and Mechanical Properties of Al-20Mg₂Si Alloy.

Science.gov (United States)

Yu, Hong-Chen; Wang, Hui-Yuan; Chen, Lei; Zha, Min; Wang, Cheng; Li, Chao; Jiang, Qi-Chuan

2016-03-29

It is found that Li₂Sb compound can act as the nucleus of primary Mg₂Si during solidification, by which the particle size of primary Mg₂Si decreased from ~300 to ~15-25 μm. Owing to the synergistic effect of the Li₂Sb nucleus and adsorption-poisoning of Li atoms, the effect of complex modification of Li-Sb on primary Mg₂Si was better than that of single modification of Li or Sb. When Li-Sb content increased from 0 to 0.2 and further to 0.5 wt.%, coarse dendrite changed to defective truncated octahedron and finally to perfect truncated octahedral shape. With the addition of Li and Sb, ultimate compression strength (UCS) of Al-20Mg₂Si alloys increased from ~283 to ~341 MPa and the yield strength (YS) at 0.2% offset increased from ~112 to ~179 MPa while almost no change was seen in the uniform elongation. Our study offers a simple method to control the morphology and size of primary Mg₂Si, which will inspire developing new Al-Mg-Si alloys with improved mechanical properties.

Evaluation of liquid-phase sintering SiC using as additive the system Al2O3/DyO3

International Nuclear Information System (INIS)

Oliveira, M.R.; Atilio, I.; Garcia, G.C.R.; Ribeiro, S.

2012-01-01

The objective of this work was to study the liquid-phase sintering SiC with additives that has not been studied yet, Al 2 O 3 /Dy 2 O 3 , with 10% in volume. The powders were mixed, dried, and pressed in uniaxial and isostatic pressing. It was studied the melting temperature of the additives and bars were sintered at temperatures of 1900, 1950 e 2000 deg C, with averaged linear shrinkage of 17%, phase transformations of β-SiC into α-SiC and formation of Dy 3 Al 5 O 12 at all temperatures. The results showed that for further densification, the temperature of 1950 deg C is enough for a higher densification, with a low wetting angle, transformations of SiC and formation of Dy 3 Al 5 O 12 . (author)

Effect of Y addition on crystallization behavior and soft-magnetic properties of Fe{sub 78}Si{sub 9}B{sub 13} ribbons

Energy Technology Data Exchange (ETDEWEB)

Zhanwei, Liu; Dunbo, Yu, E-mail: yudb2008@126.com; Kuoshe, Li; Yang, Luo; Chao, Yuan; Zilong, Wang; Liang, Sun; Kuo, Men

2017-08-15

Highlights: • Thermal stability of Fe-Si-B amorphous alloy is enhanced by Y addition. • Y addition can improve soft magnetic properties of Fe-Si-B amorphous alloy. • Decomposition of metastable Fe{sub 3}B phase is related to Y content in Fe-Si-B matrix. - Abstract: A series of amorphous Fe-Si-B ribbons with various Y addition were prepared by melt-spinning. The effect of Y addition on crystallization behavior, thermal and magnetic properties was systematically investigated. With the increase of Y content, the initial crystallization temperature shifted to a higher temperature, indicating that the thermal stability of amorphous state in Fe-Si-B-Y ribbon is enhanced compared to that of Fe-Si-B alloy. Meanwhile, compared to the two exothermic peaks in the samples with lower Y content, a new exothermic peak was found in the ribbons with Y content higher than 1 at%, which corresponded to the decomposition of metastable Fe{sub 3}B phase. Among all the alloys, Fe{sub 76.5}Si{sub 9}B{sub 13}Y{sub 1.5} alloy exhibits optimized magnetic properties, with high saturation magnetization M{sub s} of 187 emu/g and low coercivity H{sub cJ} of 7.6 A/m.

A FEATURE MOVIE OF SiO EMISSION 20-100 AU FROM THE MASSIVE YOUNG STELLAR OBJECT ORION SOURCE I

International Nuclear Information System (INIS)

Matthews, L. D.; Greenhill, L. J.; Goddi, C.; Humphreys, E. M. L.; Chandler, C. J.; Kunz, M. W.

2010-01-01

We present multi-epoch Very Long Baseline Array imaging of the 28 SiO v = 1 and v = 2, J = 1-0 maser emission toward the massive young stellar object (YSO) Orion Source I. Both SiO transitions were observed simultaneously with an angular resolution of ∼0.5 mas (∼0.2 AU for d = 414 pc) and a spectral resolution of ∼0.2 km s -1 . Here we explore the global properties and kinematics of the emission through two 19-epoch animated movies spanning 21 months (from 2001 March 19 to 2002 December 10). These movies provide the most detailed view to date of the dynamics and temporal evolution of molecular material within ∼20-100 AU of a massive (∼>8 M sun ) YSO. As in previous studies, we find that the bulk of the SiO masers surrounding Source I lie in an X-shaped locus; the emission in the south and east arms is predominantly blueshifted, and emission in the north and west is predominantly redshifted. In addition, bridges of intermediate-velocity emission are observed connecting the red and blue sides of the emission distribution. We have measured proper motions of over 1000 individual maser features and found that these motions are characterized by a combination of radially outward migrations along the four main maser-emitting arms and motions tangent to the intermediate-velocity bridges. We interpret the SiO masers as arising from a wide-angle bipolar wind emanating from a rotating, edge-on disk. The detection of maser features along extended, curved filaments suggests that magnetic fields may play a role in launching and/or shaping the wind. Our observations appear to support a picture in which stars with masses as high as at least 8 M sun form via disk-mediated accretion. However, we cannot yet rule out that the Source I disk may have been formed or altered following a recent close encounter.

Effect of organic additives on mechanical properties of SiC ceramics prepared by a modified gelcasting method

Directory of Open Access Journals (Sweden)

Feng Wang

2016-12-01

Full Text Available A novel and simple gel system of isobutylene and maleic anhydride (PIBM was used to prepare SiC ceramics. The rheological behaviour of the SiC slurries was investigated as function of organic additives. The SiC slurries with 0.2 wt.% PIBM and 0.2 wt.% tetramethylammonium hydroxide (TMAH showed low viscosity, which was favourable for casting SiC green bodies. In order to obtain homogeneous green bodies, polyvinyl alcohol (PVA was used to assist the dispersion of carbon black in the slurries, and polyethylene glycol (PEG was added to inhibit the surface exfoliation of green bodies. The content of PVA was controlled carefully to avoid the warpage of green bodies during the drying process. Finally, homogeneous defect-free SiC green bodies were successfully fabricated via aqueous gelcasting. The SiC ceramics sintered at 2100 °C (prepared from slurries with solid content of 60 wt.% showed an average flexural strength of 305.7 MPa with porosity of 19.92%.

Co-delivery of siRNA and doxorubicin to cancer cells from additively manufactured implants

DEFF Research Database (Denmark)

Chen, Muwan; Andersen, Morten Østergaard; Dillschneider, Philipp

2015-01-01

, capable of physically supporting the void while killing residual cancer cells, would be an attractive solution. Here we describe a novel additively manufactured implant that can be functionalized with chitosan/siRNA nanoparticles. These induce long term gene silencing in adjacent cancer cells without...

X-ray photoelectron spectroscopy studies of nitridation on 4H-SiC (0001) surface by direct nitrogen atomic source

International Nuclear Information System (INIS)

Chai, J. W.; Pan, J. S.; Zhang, Z.; Wang, S. J.; Chen, Q.; Huan, C. H. A.

2008-01-01

A Si 3 N 4 passivation layer has been successfully grown on the 4H-SiC (0001) surface by direct atomic source nitridation at various substrate temperatures. In situ x-ray photoelectron spectroscopy measurements show that higher substrate temperature leads to higher nitridation rate and good crystallinity of the passivation layer. A thin oxynitride layer on the top of the Si 3 N 4 was observed due to the residual O in the vacuum system, but was decomposed during annealing. In the meantime, excess C was found to be effectively removed by the reactive atomic N source

Room temperature synthesis of Si-MCM-41 using polymeric version of ethyl silicate as a source of silica

International Nuclear Information System (INIS)

Gaydhankar, T.R.; Samuel, V.; Jha, R.K.; Kumar, R.; Joshi, P.N.

2007-01-01

Synthesis of mesoporous MCM-41 materials at room temperature using less expensive polymeric version of ethyl silicate (40 wt% SiO 2 ) as a source of silica was established. The influence of crucial synthesis parameters such as molar ratios of H 2 O/NH 4 OH, NH 4 OH/SiO 2 and CTMABr/SiO 2 in gel on the quality of the phase formed was investigated. Powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and low temperature N 2 adsorption-desorption isotherms have been employed to characterize the products. The magnitude of orderness, textural properties and thermal stability of the Si-MCM-41 samples prepared under identical judiciously pre-controlled synthesis conditions using ethyl silicate and conventional tetraethyl orthosilicate (TEOS) were assessed. Even though, ethyl silicate has proved to be suitable source for the preparation of MCM-41 at room temperature, there exists an optimum value of H 2 O/NH 4 OH for different NH 4 OH/SiO 2 molar ratios in the gel. Changes in the morphology were observed when NH 4 OH/SiO 2 , H 2 O/NH 4 OH molar ratios in the gels were changed

Effect of Si addition on the structure and corrosion behavior of NbN thin films deposited by unbalanced magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Velasco, L. [Universidad Nacional de Colombia, Departamento de Ingenieria Mecanica y Mecatronica, Facultad de Ingenieria, Bogota (Colombia); University of Southern California, Department of Chemical Engineering and Materials Science, Los Angeles, CA (United States); Olaya, J.J. [Universidad Nacional de Colombia, Departamento de Ingenieria Mecanica y Mecatronica, Facultad de Ingenieria, Bogota (Colombia); Rodil, S.E. [Universidad Nacional Autonoma de Mexico, Instituto de Investigaciones en Materiales, Mexico, D. F. (Mexico)

2016-02-15

In this work, nanostructured Nb{sub x}Si{sub y}N{sub z} thin films were deposited onto stainless steel AISI 304 substrates by co-sputtering a Nb target with Si additions while using unbalanced magnetron sputtering. The microstructure was analyzed by X-ray diffraction, and the chemical composition was identified by X-ray photoelectron spectroscopy. The hardness was measured by nanoindentation, and the corrosion resistance was studied by potentiodynamic polarization curves and electrochemical impedance spectroscopy using a 3 wt% NaCl solution. The addition of Si in the NbN thin films changed the microstructure from a crystalline to an amorphous phase. The chemical analysis showed the presence of both Si{sub 3}N{sub 4} and NbN phases. The hardness decreased from 20 GPa (NbN) to 15 GPa for the film with the highest Si concentration (28.6 at.%). Nevertheless, the corrosion properties were significantly improved as the Si concentration increased; the polarization resistance after 168 h of immersion was two orders of magnitude larger in comparison with the substrate. (orig.)

Effect of Si addition on the structure and corrosion behavior of NbN thin films deposited by unbalanced magnetron sputtering

International Nuclear Information System (INIS)

Velasco, L.; Olaya, J.J.; Rodil, S.E.

2016-01-01

In this work, nanostructured Nb x Si y N z thin films were deposited onto stainless steel AISI 304 substrates by co-sputtering a Nb target with Si additions while using unbalanced magnetron sputtering. The microstructure was analyzed by X-ray diffraction, and the chemical composition was identified by X-ray photoelectron spectroscopy. The hardness was measured by nanoindentation, and the corrosion resistance was studied by potentiodynamic polarization curves and electrochemical impedance spectroscopy using a 3 wt% NaCl solution. The addition of Si in the NbN thin films changed the microstructure from a crystalline to an amorphous phase. The chemical analysis showed the presence of both Si 3 N 4 and NbN phases. The hardness decreased from 20 GPa (NbN) to 15 GPa for the film with the highest Si concentration (28.6 at.%). Nevertheless, the corrosion properties were significantly improved as the Si concentration increased; the polarization resistance after 168 h of immersion was two orders of magnitude larger in comparison with the substrate. (orig.)

Accelerated age hardening by plastic deformation in Al-Cu with minor additions of Si and Ge

International Nuclear Information System (INIS)

Victoria Castro Riglos, M.; Taquire de la Cruz, M.; Tolley, Alfredo

2011-01-01

An extremely fast hardening response with no reduction in peak hardness was obtained in Al-Cu with minor additions of Si and Ge by 8% plastic deformation before artificial aging. The mechanism for the accelerated hardening was determined by detailed characterization with transmission electron microscopy. Plastic deformation was found to enhance the nucleation rate of Si-Ge precipitates, resulting in a higher volume density. Such precipitates catalyzed the formation of θ' precipitates that are responsible for hardening.

Texture and magnetic properties improvement of a 3% Si non-oriented electrical steel by Sb addition

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, Marcio Ferreira, E-mail: marciof.rodrigues@aperam.com [Aperam South America, Timóteo, MG (Brazil); Cunha, Marco Antonio da; Costa Paolinelli, Sebastião da [Aperam South America, Timóteo, MG (Brazil); Cota, André Barros [Physics Department—Universidade Federal de Ouro Preto, Redemat, Ouro Preto, MG (Brazil)

2013-04-15

The influence of small antimony addition and thermomechanical processing on the magnetic properties of a 3% Si steel was investigated. The samples were processed in the laboratory with 930 °C hot rolling finishing temperature, three different hot band thicknesses, hot band annealing at 1030 °C, cold rolling with three different reductions to 0.35 mm thickness and final annealing at 1030 °C. The results have shown that the best combination of core loss and magnetic induction can be obtained by Sb content of 0.045% and 76% cold rolling reduction, and that Eta/Gamma ratio is higher and grain size larger at this Sb content. -- Highlights: ► The Sb addition on the magnetic properties of a 3% Si steel was investigated. ► The 0.045% Sb and cold rolling reduction of 76% results in the best magnetic properties. ► Sb and cold rolling reduction results in a optimum final grain size and texture. ► The work was performed in a 3% Si non-oriented electrical steel.

Influence of SiO2 Addition on Properties of PTFE/TiO2 Microwave Composites

Science.gov (United States)

Yuan, Ying; Wang, Jie; Yao, Minghao; Tang, Bin; Li, Enzhu; Zhang, Shuren

2018-01-01

Composite substrates for microwave circuit applications have been fabricated by filling polytetrafluoroethylene (PTFE) polymer matrix with ceramic powder consisting of rutile TiO2 ( D 50 ≈ 5 μm) partially substituted with fused amorphous SiO2 ( D 50 ≈ 8 μm) with composition x vol.% SiO2 + (50 - x) vol.% TiO2 ( x = 0, 3, 6, 9, 12), and the effects of SiO2 addition on characteristics such as the density, moisture absorption, microwave dielectric properties, and thermal properties systematically investigated. The results show that the filler was well distributed throughout the matrix. High dielectric constant ( ɛ r > 7.19) and extremely low moisture absorption (ceramic particles served as barriers and improved the thermal stability of the PTFE polymer, retarding its decomposition. The temperature coefficient of dielectric constant ( τ ɛ ) of the composites shifted toward the positive direction (from - 309 ppm/°C to - 179 ppm/°C) as the SiO2 content was increased, while the coefficient of thermal expansion remained almost unchanged (˜ 35 ppm/°C).

Effect of TiO2 addition on reaction between SiC and Ni in SiC-Ni cermet spray coatings. Part 2. ; Development of SiC-based cermet spray coatings. SiC-Ni yosha himakuchu no SiC-Ni kaimen hanno ni oyobosu TiO2 tenka no koka. 2. ; SiC-ki sametto yosha himaku no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

Nakamura, T [Kumano Technical College, Mie (Japan); Oki, S; Goda, S [Kinki Univ., Higashi-Osaka, Osaka (Japan). Faculty of Science and Technology

1992-09-30

The depression of the reaction between SiC and Ni, by adding TiO2 powder in spraying powder which has caused uniform dispersion in spray coating and reduction of TiO2 by the reaction during spraying, was studied. The mass ratio of the mixed components has been, SiC:Ni:TiO2=3:2:1. The spray coating was examined by electron prove microanalysis as well as X-ray diffractometry, centering mainly to the SiC-metal interface reaction. The formation of Ni-Si compounds have been depressed by the addition of TiO2 to spraying powder and by using plasma gas containing H2. Reason for this has been that the TiC formed in the SiC-Ni interface has depressed the reaction at the SiC-Ni interface. Further, TiO2 is reduced during spraying, and TiC is thought to be formed by the reaction between Ti and SiC or reaction between TiO2 and SiC. 8 refs., 6 figs., 1 tab.

Stabilization effect of Zr and Ti additions on the ageing characteristics of Al-1 wt% Si alloy through a creep study

Energy Technology Data Exchange (ETDEWEB)

Deaf, G.H.; Beshai, M.H.N.; Abd El Khalek, A.M.; Graiss, G. [Ain Shams Univ., Cairo (Egypt). Dept. of Physics; Kenawy, M.A. [Ain Shams Univ., Cairo (Egypt). Womens Coll.

1997-12-31

Al-1 wt% Si and Al-1 wt% Si-0.1 wt% Zr-0.1 wt% Ti alloys were used to trace the effect of Zr and Ti additions on the behaviour of the steady state creep. After solid solution treatment specimens of both alloys were aged at 623, 673, 723 and 773 K and creep tests were performed at room temperature by applying stresses of 60.0, 62.4, 64.7 and 67.1 MPa. The results showed a sound stabilization effect of Zr and Ti on the ageing characteristics of binary Al-1 wt% Si alloy. Values of the applied stress sensitivity parameter, m, obtained were in the range of (20-34) for Al-Si alloy and (14-19) for Al-Si-Zr-Ti alloy. Time to rupture was found to be strongly increased by Zr and Ti additions. The activation energies of the precipitation process involved were found to be 81.9 kJ/mole and 33.7 kJ/mole of the Al-Si and Al-Si-Zr-Ti alloys respectively. (orig.) 17 refs.

Effect of Si addition on glass-forming ability and mechanical properties of Cu-Zr-Al bulk metallic glass

International Nuclear Information System (INIS)

Malekan, M.; Shabestari, S.G.; Zhang, W.; Seyedein, S.H.; Gholamipour, R.; Makino, A.; Inoue, A.

2010-01-01

Research highlights: The Cu 50 Zr 43 Al 7 alloy has a surprising GFA, and the glassy rods with diameter of 10 mm have been produced in this research. It has not been reported that the Cu-based glassy rods (Cu ≥ 50 at.%) to be produced with the critical diameter greater than 10 mm. The novelty of this research is that the glass formation has been improved and the critical diameter increased to 12 mm for the alloy having x = 1 with the addition of Si. Different criteria are used to evaluate the influence of Si content on the GFA, and the possible mechanisms involved in the achievement of this GFA are also discussed. - Abstract: The effect of Si addition on the glass-forming ability (GFA) and mechanical properties of (Cu 50 Zr 43 Al 7 ) 100-x Si x (x = 0, 0.5, 1, 1.5 and 2 at.%) alloys were investigated. The GFA of Cu 50 Zr 43 Al 7 alloy is improved by addition of a small amount of Si, and the critical diameter for glass formation increases from 10 mm for the alloy with x = 0-12 mm for the alloy with x = 1 when prepared using copper mold casting. Different criteria are used to evaluate the influence of Si content on the GFA, and the possible mechanisms involved in the achievement of this GFA are also discussed. In the uniaxial compression, the bulk glassy alloys exhibit a limited plastic strain of less than 1%, but the compressive fracture strength and Young's modulus were obtained in high values of 1969-2129 MPa and 101-144 GPa, respectively. Fracture surface and shear bands of samples were studied by using scanning electron microscopy (SEM).

Effects of combined additions of Sr and AlTiB grain refiners in hypoeutectic Al-Si foundry alloys

International Nuclear Information System (INIS)

Lu, L.; Dahle, A.K.

2006-01-01

Strontium is the most widely used and a very effective element for modifying the morphology of eutectic silicon, while Ti and B are commonly present in the commercial grain refiners used for Al-Si alloys. Systematic studies on the effects of combined additions of Sr and different AlTiB grain refiners on the Al + Si eutectic and primary aluminium solidification have been performed. While slight coarsening of both eutectic Si and primary aluminium grains occurs during holding, no obvious interactions are observed between Sr and AlTiB grain refiners when the addition level of grain refiners is low. As a result, a well-modified and grain refined structure was obtained. However, strong negative interactions between Sr and Al1.5Ti1.5B were observed as the addition level of the grain refiner increases. It was found that these interactions have a much more profound impact on the eutectic solidification than the primary Al solidification. The melt treated with combined additions of Sr and Al1.5Ti1.5B still shows good grain refinement efficiency even after losing its modification completely. The mechanism responsible for such negative interactions is further discussed

Effects of combined additions of Sr and AlTiB grain refiners in hypoeutectic Al-Si foundry alloys

Energy Technology Data Exchange (ETDEWEB)

Lu, L. [CSIRO Minerals, P.O. Box 883, Kenmore, Qld. 4069 (Australia)]. E-mail: Liming.Lu@csiro.au; Dahle, A.K. [CRC for Cast Metals Manufacturing, Division of Materials, School of Engineering, University of Queensland, Brisbane, Qld. 4072 (Australia)

2006-11-05

Strontium is the most widely used and a very effective element for modifying the morphology of eutectic silicon, while Ti and B are commonly present in the commercial grain refiners used for Al-Si alloys. Systematic studies on the effects of combined additions of Sr and different AlTiB grain refiners on the Al + Si eutectic and primary aluminium solidification have been performed. While slight coarsening of both eutectic Si and primary aluminium grains occurs during holding, no obvious interactions are observed between Sr and AlTiB grain refiners when the addition level of grain refiners is low. As a result, a well-modified and grain refined structure was obtained. However, strong negative interactions between Sr and Al1.5Ti1.5B were observed as the addition level of the grain refiner increases. It was found that these interactions have a much more profound impact on the eutectic solidification than the primary Al solidification. The melt treated with combined additions of Sr and Al1.5Ti1.5B still shows good grain refinement efficiency even after losing its modification completely. The mechanism responsible for such negative interactions is further discussed.

Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

Science.gov (United States)

Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

2017-11-01

The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

Alternative current source based Schottky contact with additional electric field

Science.gov (United States)

Mamedov, R. K.; Aslanova, A. R.

2017-07-01

Additional electric field (AEF) in the Schottky contacts (SC) that covered the peripheral contact region wide and the complete contact region narrow (as TMBS diode) SC. Under the influence of AEF is a redistribution of free electrons produced at certain temperatures of the semiconductor, and is formed the space charge region (SCR). As a result of the superposition of the electric fields SCR and AEF occurs the resulting electric field (REF). The REF is distributed along a straight line perpendicular to the contact surface, so that its intensity (and potential) has a minimum value on the metal surface and the maximum value at a great distance from the metal surface deep into the SCR. Under the influence of AEF as a sided force the metal becomes negative pole and semiconductor - positive pole, therefore, SC with AEF becomes an alternative current source (ACS). The Ni-nSi SC with different diameters (20-1000 μm) under the influence of the AEF as sided force have become ACS with electromotive force in the order of 0.1-1.0 mV, which are generated the electric current in the range of 10-9-10-7 A, flowing through the external resistance 1000 Ohm.

Influence of Si and N additions on structure and phase stability of Ge(2)Sb(2)Te(5) thin films.

Science.gov (United States)

Kölpin, Helmut; Music, Denis; Laptyeva, Galyna; Ghadimi, Reza; Merget, Florian; Richter, Silvia; Mykhaylonka, Ruslàn; Mayer, Joachim; Schneider, Jochen M

2009-10-28

The influence of Si and N in Ge(2)Sb(2)Te(5) (space group [Formula: see text]) on structure and phase stability thereof was studied experimentally by thin film growth and characterization as well as theoretically by ab initio calculations. It was found that Si and N most probably accumulate in the amorphous matrix embedding Ge(2)Sb(2)Te(5) grains. The incorporation of Si and N in these samples causes an increase of the crystallization temperature and the formation of finer grains. N is more efficient in increasing the crystallization temperature and in reducing the grain size than Si which can be understood based on the bonding analysis. The incorporation of both Si and N in Ge(2)Sb(2)Te(5) is energetically unfavourable, leading to finer grains and larger crystallization temperatures. While in the case of Si additions no significant changes in bonding are observed, N additions appear to enable the formation of strong Te-N bonds in the amorphous matrix, which are shown to be almost twice as strong as the strongest bonds in unalloyed Ge(2)Sb(2)Te(5).

Influence of Si and N additions on structure and phase stability of Ge2Sb2Te5 thin films

International Nuclear Information System (INIS)

Koelpin, Helmut; Music, Denis; Mykhaylonka, Ruslan; Schneider, Jochen M; Laptyeva, Galyna; Ghadimi, Reza; Richter, Silvia; Mayer, Joachim; Merget, Florian

2009-01-01

The influence of Si and N in Ge 2 Sb 2 Te 5 (space group Fm3-barm) on structure and phase stability thereof was studied experimentally by thin film growth and characterization as well as theoretically by ab initio calculations. It was found that Si and N most probably accumulate in the amorphous matrix embedding Ge 2 Sb 2 Te 5 grains. The incorporation of Si and N in these samples causes an increase of the crystallization temperature and the formation of finer grains. N is more efficient in increasing the crystallization temperature and in reducing the grain size than Si which can be understood based on the bonding analysis. The incorporation of both Si and N in Ge 2 Sb 2 Te 5 is energetically unfavourable, leading to finer grains and larger crystallization temperatures. While in the case of Si additions no significant changes in bonding are observed, N additions appear to enable the formation of strong Te-N bonds in the amorphous matrix, which are shown to be almost twice as strong as the strongest bonds in unalloyed Ge 2 Sb 2 Te 5 .

Effect of Si addition on the glass-forming ability of a NiTiZrAlCu alloy

International Nuclear Information System (INIS)

Liang, W.Z.; Shen, J.; Sun, J.F.

2006-01-01

The effect of Si addition on the glass-forming ability (GFA) of a NiTiZrAlCu alloy was investigated by using differential scanning calorimetry (DSC), differential thermal analysis (DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The maximum diameter of glassy rods increased from 0.5 mm for the Ni 42 Ti 20 Zr 25 Al 8 Cu 5 alloy (the base alloy) to 2.5 mm for the Ni 42 Ti 20 Zr 21.5 Al 8 Cu 5 Si 3.5 alloy and to 3 mm for the Ni 42 Ti 19 Zr 22.5 Al 8 Cu 5 Si 3.5 alloy, when prepared by using the copper mould casting. The GFA of the alloys can be assessed by the reduced glass transition temperature T rg (=T g /T l ) and a newly proposed parameter, δ(=T x /T l - T g ). An addition of a proper amount of Si and a minor substitution of Ti with Zr can enhance the GFA of the base alloy by suppressing the formation of primary Ni(TiZr) and (TiZr)(CuAl) 2 phases and inducing the composition close to eutectic

Reduction in secondary dendrite arm spacing in cast eutectic Al-Si piston alloys by cerium addition

Science.gov (United States)

Ahmad, R.; Asmael, M. B. A.; Shahizan, N. R.; Gandouz, S.

2017-01-01

The effects of Ce on the secondary dendrite arm spacing (SDAS) and mechanical behavior of Al-Si-Cu-Mg alloys were investigated. The reduction of SDAS at different Ce concentrations was evaluated in a directional solidification experiment via computer-aided cooling curve thermal analysis (CA‒CCTA). The results showed that 0.1wt%-1.0wt% Ce addition resulted in a rapid solidification time, Δ t s, and low solidification temperature, Δ T S, whereas 0.1wt% Ce resulted in a fast solidification time, Δ t a-Al, of the α-Al phase. Furthermore, Ce addition refined the SDAS, which was reduced to approximately 36%. The mechanical properties of the alloys with and without Ce were investigated using tensile and hardness tests. The quality index ( Q) and ultimate tensile strength of (UTS) Al-Si-Cu-Mg alloys significantly improved with the addition of 0.1wt% Ce. Moreover, the base alloy hardness was improved with increasing Ce concentration.

Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

Directory of Open Access Journals (Sweden)

Sangmo Koo

2016-09-01

Full Text Available The selective epitaxial growth of Si1-xGex and the related strain properties were studied. Epitaxial Si1-xGex films were deposited on (100 and (110 orientation wafers and on patterned Si wafers with recessed source and drain structures via ultrahigh vacuum chemical vapor deposition using different growing steps and Ge concentrations. The stepwise process was split into more than 6 growing steps that ranged in thicknesses from a few to 120 nm in order to cover the wide stages of epitaxial growth. The growth rates of SiGe on the plane and patterned wafers were examined and a dependence on the surface orientation was identified. As the germanium concentration increased, defects were generated with thinner Si1-xGex growth. The defect generation was the result of the strain evolution which was examined for channel regions with a Si1-xGex source/drain (S/D structure.

Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

Science.gov (United States)

Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

2017-11-25

The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

Effects of Interface Coating and Nitride Enhancing Additive on Properties of Hi-Nicalon SiC Fiber Reinforced Reaction-Bonded Silicon Nitride Composites

Science.gov (United States)

Bhatt, Ramakrishana T.; Hull, David R.; Eldridge, Jeffrey I.; Babuder, Raymond

2000-01-01

Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.

Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions

Science.gov (United States)

Mitani, Takeshi; Komatsu, Naoyoshi; Takahashi, Tetsuo; Kato, Tomohisa; Fujii, Kuniharu; Ujihara, Toru; Matsumoto, Yuji; Kurashige, Kazuhisa; Okumura, Hajime

2014-09-01

The growth rate and surface morphology of 4H-SiC crystals prepared by solution growth with Si1-xCrx and Si1-x-yCrxAly (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H-SiC crystals was suppressed using Si1-x-yCrxAly solvents even under highly supersaturated conditions where the growth rate exceeded 760 μm/h. Conversely, trench-like defects were observed in crystals grown with Si1-xCrx solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1-x-yCrxAly solvents was maintained at lower levels than that obtained using Si1-xCrx solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects.

The Effects of Al and Ti Additions on the Structural Stability, Mechanical and Electronic Properties of D8m-Structured Ta5Si3

Directory of Open Access Journals (Sweden)

Linlin Liu

2016-05-01

Full Text Available In the present study, the influence of substitutional elements (Ti and Al on the structural stability, mechanical properties, electronic properties and Debye temperature of Ta5Si3 with a D8m structure were investigated by first principle calculations. The Ta5Si3 alloyed with Ti and Al shows negative values of formation enthalpies, indicating that these compounds are energetically stable. Based on the values of formation enthalpies, Ti exhibits a preferential occupying the Ta4b site and Al has a strong site preference for the Si8h site. From the values of the bulk modulus (B, shear modulus (G and Young’s modulus (E, we determined that both Ti and Al additions decrease both the shear deformation resistance and the elastic stiffness of D8m structured Ta5Si3. Using the shear modulus/bulk modulus ratio (G/B, Poisson’s ratio (υ and Cauchy’s pressure, the effect of Ti and Al additions on the ductility of D8m-structured Ta5Si3 are explored. The results show that Ti and Al additions reduce the hardness, resulting in solid solution softening, but improve the ductility of D8m-structured Ta5Si3. The electronic calculations reveal that Ti and Al additions change hybridization between Ta-Si and Si-Si atoms for the binary D8m-structured Ta5Si3. The new Ta-Al bond is weaker than the Ta-Si covalent bonds, reducing the covalent property of bonding in D8m-structured Ta5Si3, while the new strong Ti4b-Ti4b anti-bonding enhances the metallic behavior of the binary D8m-structured Ta5Si3. The change in the nature of bonding can well explain the improved ductility of D8m-structured Ta5Si3 doped by Ti and Al. Moreover, the Debye temperatures, ΘD, of D8m-structured Ta5Si3 alloying with Ti and Al are decreased as compared to the binary Ta5Si3.

Effect of Cr, Ti, V, and Zr Micro-additions on Microstructure and Mechanical Properties of the Al-Si-Cu-Mg Cast Alloy

Science.gov (United States)

Shaha, S. K.; Czerwinski, F.; Kasprzak, W.; Friedman, J.; Chen, D. L.

2016-05-01

Uniaxial static and cyclic tests were used to assess the role of Cr, Ti, V, and Zr additions on properties of the Al-7Si-1Cu-0.5Mg (wt pct) alloy in as-cast and T6 heat-treated conditions. The microstructure of the as-cast alloy consisted of α-Al, eutectic Si, and Cu-, Mg-, and Fe-rich phases Al2.1Cu, Al8.5Si2.4Cu, Al5.2CuMg4Si5.1, and Al14Si7.1FeMg3.3. In addition, the micro-sized Cr/Zr/Ti/V-rich phases Al10.7SiTi3.6, Al6.7Si1.2TiZr1.8, Al21.4Si3.4Ti4.7VZr1.8, Al18.5Si7.3Cr2.6V, Al7.9Si8.5Cr6.8V4.1Ti, Al6.3Si23.2FeCr9.2V1.6Ti1.3, Al92.2Si16.7Fe7.6Cr8.3V1.8, and Al8.2Si30.1Fe1.6Cr18.8V3.3Ti2.9Zr were present. During solution treatment, Cu-rich phases were completely dissolved, while the eutectic silicon, Fe-, and Cr/Zr/Ti/V-rich intermetallics experienced only partial dissolution. Micro-additions of Cr, Zr, Ti, and V positively affected the alloy strength. The modified alloy in the T6 temper during uniaxial tensile tests exhibited yield strength of 289 MPa and ultimate tensile strength of 342 MPa, being significantly higher than that for the Al-Si-Cu-Mg base. Besides, the cyclic yield stress of the modified alloy in the T6 state increased by 23 pct over that of the base alloy. The fatigue life of the modified alloy was substantially longer than that of the base alloy tested using the same parameters. The role of Cr, Ti, V, and Zr containing phases in controlling the alloy fracture during static and cyclic loading is discussed.

Tribological properties of SiC-based MCD films synthesized using different carbon sources when sliding against Si3N4

Science.gov (United States)

Wang, Xinchang; Shen, Xiaotian; Zhao, Tianqi; Sun, Fanghong; Shen, Bin

2016-04-01

Micro-crystalline diamond (MCD) films are deposited on reactive sintering SiC substrates by the bias enhanced hot filament chemical vapor deposition (BE-HFCVD) method, respectively using the methane, acetone, methanol and ethanol as the carbon source. Two sets of standard tribotests are conducted, adopting Si3N4 balls as the counterpart balls, respectively with the purpose of clarifying differences among tribological properties of different MCD films, and studying detailed effects of the carbon source C, normal load Fn and sliding velocity v based on orthogonal analyses. It is clarified that the methane-MCD film presents the lowest growth rate, the highest film quality, the highest hardness and the best adhesion, in consequence, it also performs the best tribological properties, including the lowest coefficient of friction (COF) and wear rate Id, while the opposite is the methanol-MCD film. Under a normal load Fn of 7 N and at a sliding velocity v of 0.4183 m/s, for the methane-MCD film, the maximum COF (MCOF) is 0.524, the average COF during the relatively steady-state regime (ACOF) is 0.144, and the Id is about 1.016 × 10-7 mm3/N m; and for the methanol-MCD film, the MCOF is 0.667, the ACOF is 0.151, and the Id is 1.448 × 10-7 mm3/N m. Moreover, the MCOF, ACOF, Id and the wear rate of the Si3N4 ball Ib will all increase with the Fn, while the v only has significant effect on the ACOF, which shows a monotone increasing trend with the v.

Radioactive Sources in Medicine: Impact of Additional Security Measures

International Nuclear Information System (INIS)

Classic, K. L.; Vetter, R. J.; Nelson, K. L.

2004-01-01

For many years, medical centers and hospitals have utilized appropriate security measures to prevent theft or unauthorized use of radioactive materials. Recent anxiety about orphan sources and terrorism has heightened concern about diversion of radioactive sources for purposes of constructing a radiological dispersion device. Some medical centers and hospitals may have responded by conducting threat assessments and incorporating additional measures into their security plans, but uniform recommendations or regulations have not been promulgated by regulatory agencies. The International Atomic Energy Agency drafted interim guidance for the purpose of assisting member states in deciding what security measures should be taken for various radioactive sources. The recommendations are aimed at regulators, but suppliers and users also may find the recommendations to be helpful. The purpose of this paper is to describe threat assessments and additional security actions that were taken by one large and one medium-sized medical center and the impact these measures had on operations. Both medical centers possess blood bank irradiators, low-dose-rate therapy sources, and Mo-99/Tc-99m generators that are common to many health care organizations. Other medical devices that were evaluated include high-dose-rate after loaders, intravascular brachytherapy sources, a Co-60 stereotactic surgery unit, and self-shielded irradiators used in biomedical research. This paper will discuss the impact additional security has had on practices that utilize these sources, cost of various security alternatives, and the importance of a security culture in assuring the integrity of security measures without negatively impacting beneficial use of these sources. (Author) 10 refs

Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

International Nuclear Information System (INIS)

Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D.; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M.; Bednarcik, J.; Michalikova, J.

2015-01-01

Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O 2 atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al 2 O 3 formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO 2 at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al 2 O 3 with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds

Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

Energy Technology Data Exchange (ETDEWEB)

Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D., E-mail: music@mch.rwth-aachen.de; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Bednarcik, J.; Michalikova, J. [Deutsches Elektronen Synchrotron DESY, FS-PE group, Notkestrasse 85, D-22607 Hamburg (Germany)

2015-01-14

Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

Improving High-Temperature Tensile and Low-Cycle Fatigue Behavior of Al-Si-Cu-Mg Alloys Through Micro-additions of Ti, V, and Zr

Science.gov (United States)

Shaha, S. K.; Czerwinski, F.; Kasprzak, W.; Friedman, J.; Chen, D. L.

2015-07-01

High-temperature tensile and low-cycle fatigue tests were performed to assess the influence of micro-additions of Ti, V, and Zr on the improvement of the Al-7Si-1Cu-0.5Mg (wt pct) alloy in the as-cast condition. Addition of transition metals led to modification of microstructure where in addition to conventional phases present in the Al-7Si-1Cu-0.5Mg base, new thermally stable micro-sized Zr-Ti-V-rich phases Al21.4Si4.1Ti3.5VZr3.9, Al6.7Si1.2TiZr1.8, Al2.8Si3.8V1.6Zr, and Al5.1Si35.4Ti1.6Zr5.7Fe were formed. The tensile tests showed that with increasing test temperature from 298 K to 673 K (25 °C to 400 °C), the yield stress and tensile strength of the present studied alloy decreased from 161 to 84 MPa and from 261 to 102 MPa, respectively. Also, the studied alloy exhibited 18, 12, and 5 pct higher tensile strength than the alloy A356, 354 and existing Al-Si-Cu-Mg alloy modified with additions of Zr, Ti, and Ni, respectively. The fatigue life of the studied alloy was substantially longer than those of the reference alloys A356 and the same Al-7Si-1Cu-0.5Mg base with minor additions of V, Zr, and Ti in the T6 condition. Fractographic analysis after tensile tests revealed that at the lower temperature up to 473 K (200 °C), the cleavage-type brittle fracture for the precipitates and ductile fracture for the matrix were dominant while at higher temperature fully ductile-type fracture with debonding and pull-out of cracked particles was identified. It is believed that the intermetallic precipitates containing Zr, Ti, and V improve the alloy performance at increased temperatures.

Influence of the Mo and W additions on the microstructure evolution and mechanical properties in Si-Cr spring steels

International Nuclear Information System (INIS)

Ban, Deok Young; Lee, Sang Lae; Nam, Won Jong

1998-01-01

Effects of the Mo and W additions to Si-Cr spring steels on the microstructural evolution and mechanical properties in spring steels were investigated. It was found that the Mo and/or W addition does not change the behavior of tempered carbide at low temperatures, such as the precipitation of ε-carbide and the conversion of ε-carbide to cementite, via dilatometry tests and the observation of microstructure using TEM. However, it would reduce the coarsening rate of cementite at high temperature above 450 .deg. C, resulting in the smaller size of cementite particles due to the lower diffusion rate. Since the sag resistance depends on the distribution and the size of precipitates, steel C(0.2% W) showed the strongest sag resistance whereas steel A showed the weakest sag resistance, when tempered at 450 .deg. C. Also, an abundance of precipitates at 350 deg. C tempering exhibits the maximum loop area, i.e., the sag resistance for all the tested steels. The Mo and W additions to Si-Cr spring steels raised the ratio of loop area/tensile strength. Therefore, the Mo and W additions would be effective method to increase the sag resistance as well as strength in Si-Cr spring steels

The influence of additions of Al and Si on the lattice stability of fcc and hcp Fe-Mn random alloys

Energy Technology Data Exchange (ETDEWEB)

Gebhardt, T; Music, D; Schneider, J M [Materials Chemistry, RWTH Aachen University, D-52056 Aachen (Germany); Ekholm, M; Abrikosov, I A [Department of Physics, Chemistry and Biology (IFM), Linkoeping University, SE-58183 Linkoeping (Sweden); Vitos, L [Department of Materials and Engineering, Applied Materials Physics, Royal Institute of Technology (KTH), SE-10044 Stockholm (Sweden); Dick, A; Hickel, T; Neugebauer, J, E-mail: gebhardt@mch.rwth-aachen.de [Department of Computational Materials Design, Max-Planck-Institut fuer Eisenforschung GmbH, D-40237 Duesseldorf (Germany)

2011-06-22

We have studied the influence of additions of Al and Si on the lattice stability of face-centred-cubic (fcc) versus hexagonal-closed-packed (hcp) Fe-Mn random alloys, considering the influence of magnetism below and above the fcc Neel temperature. Employing two different ab initio approaches with respect to basis sets and treatment of magnetic and chemical disorder, we are able to quantify the predictive power of the ab initio methods. We find that the addition of Al strongly stabilizes the fcc lattice independent of the regarded magnetic states. For Si a much stronger dependence on magnetism is observed. Compared to Al, almost no volume change is observed as Si is added to Fe-Mn, indicating that the electronic contributions are responsible for stabilization/destabilization of the fcc phase.

The influence of additions of Al and Si on the lattice stability of fcc and hcp Fe-Mn random alloys

International Nuclear Information System (INIS)

Gebhardt, T; Music, D; Schneider, J M; Ekholm, M; Abrikosov, I A; Vitos, L; Dick, A; Hickel, T; Neugebauer, J

2011-01-01

We have studied the influence of additions of Al and Si on the lattice stability of face-centred-cubic (fcc) versus hexagonal-closed-packed (hcp) Fe-Mn random alloys, considering the influence of magnetism below and above the fcc Neel temperature. Employing two different ab initio approaches with respect to basis sets and treatment of magnetic and chemical disorder, we are able to quantify the predictive power of the ab initio methods. We find that the addition of Al strongly stabilizes the fcc lattice independent of the regarded magnetic states. For Si a much stronger dependence on magnetism is observed. Compared to Al, almost no volume change is observed as Si is added to Fe-Mn, indicating that the electronic contributions are responsible for stabilization/destabilization of the fcc phase.

Glass forming ability and mechanical properties of the NiZrTiSi amorphous alloys modified with Al, Cu and Nb additions

International Nuclear Information System (INIS)

Czeppe, Tomasz; Ochin, Patrick; Sypien, Anna

2007-01-01

The composition of the amorphous alloy Ni 59 Zr 20 Ti 16 Si 5 was modified with 2-9 at.% additions of Cu, Al and Nb. The ribbons and the bars 2.7 mm in diameter were prepared by melt spinning and injection casting from the alloys of the compositions: Ni 56 Zr 18 Ti 16 Si 5 Al 3 Cu 2 , Ni 56 Zr 18 Ti 13 Al 6 Si 5 Cu 2 , Ni 56 Zr 16 Ti 12 Nb 9 Al 3 Cu 2 Si 2 and Ni 56 Zr 16 Ti 12 Nb 6 Al 6 Cu 2 Si 2 . All ribbons were amorphous up to the resolution of the X-ray diffraction and conventional transmission electron microscopy, however rods were partially crystalline. Increase of Al content lowered and Nb content slightly increased crystallization start temperature T x and glass transition temperature T g . The influence of composition changes on the overcooled liquid range ΔT was more complicated. The increase of Nb and decrease of Ti and Zr content led to the remarkable increase of the liquidus temperature T l . As a result GFA calculated as T g /T l was lowered to the values about 0.63 for 6 and 9 at.% Nb addition. The activation energies for primary crystallization in alloy with 6 at.% Al and 6 at.% of Nb, were determined. The changes of tensile test strength and microhardness with Al and Nb additions showed hardening effect caused by Nb additions and increase in fracture strength with increasing Al content

Effects of atomic hydrogen on the selective area growth of Si and Si1-xGex thin films on Si and SiO2 surfaces: Inhibition, nucleation, and growth

International Nuclear Information System (INIS)

Schroeder, T.W.; Lam, A.M.; Ma, P.F.; Engstrom, J.R.

2004-01-01

Supersonic molecular beam techniques have been used to study the nucleation of Si and Si 1-x Ge x thin films on Si and SiO 2 surfaces, where Si 2 H 6 and GeH 4 have been used as sources. A particular emphasis of this study has been an examination of the effects of a coincident flux of atomic hydrogen. The time associated with formation of stable islands of Si or Si 1-x Ge x on SiO 2 surfaces--the incubation time--has been found to depend strongly on the kinetic energy of the incident molecular precursors (Si 2 H 6 and GeH 4 ) and the substrate temperature. After coalescence, thin film morphology has been found to depend primarily on substrate temperature, with smoother films being grown at substrate temperatures below 600 deg. C. Introduction of a coincident flux of atomic hydrogen has a large effect on the nucleation and growth process. First, the incubation time in the presence of atomic hydrogen has been found to increase, especially at substrate temperatures below 630 deg. C, suggesting that hydrogen atoms adsorbed on Si-like sites on SiO 2 can effectively block nucleation of Si. Unfortunately, in terms of promoting selective area growth, coincident atomic hydrogen also decreases the rate of epitaxial growth rate, essentially offsetting any increase in the incubation time for growth on SiO 2 . Concerning Si 1-x Ge x growth, the introduction of GeH 4 produces substantial changes in both thin film morphology and the rate nucleation of poly-Si 1-x Ge x on SiO 2 . Briefly, the addition of Ge increases the incubation time, while it lessens the effect of coincident hydrogen on the incubation time. Finally, a comparison of the maximum island density, the time to reach this density, and the steady-state polycrystalline growth rate strongly suggests that all thin films [Si, Si 1-x Ge x , both with and without H(g)] nucleate at special sites on the SiO 2 surface, and grow primarily via direct deposition of adatoms on pre-existing islands

On-site SiH4 generator using hydrogen plasma generated in slit-type narrow gap

Science.gov (United States)

Takei, Norihisa; Shinoda, Fumiya; Kakiuchi, Hiroaki; Yasutake, Kiyoshi; Ohmi, Hiromasa

2018-06-01

We have been developing an on-site silane (SiH4) generator based on use of the chemical etching reaction between solid silicon (Si) and the high-density H atoms that are generated in high-pressure H2 plasma. In this study, we have developed a slit-type plasma source for high-efficiency SiH4 generation. High-density H2 plasma was generated in a narrow slit-type discharge gap using a 2.45 GHz microwave power supply. The plasma’s optical emission intensity distribution along the slit was measured and the resulting distribution was reflected by both the electric power distribution and the hydrogen gas flow. Because the Si etching rate strongly affects the SiH4 generation rate, the Si etching behavior was investigated with respect to variations in the experimental parameters. The weight etch rate increased monotonically with increasing input microwave power. However, the weight etch rate decreased with increasing H2 pressure and an increasing plasma gap. This reduction in the etch rate appears to be related to shrinkage of the plasma generation area because increased input power is required to maintain a constant plasma area with increasing H2 pressure and the increasing plasma gap. Additionally, the weight etch rate also increases with increasing H2 flow rate. The SiH4 generation rate of the slit-type plasma source was also evaluated using gas-phase Fourier transform infrared absorption spectroscopy and the material utilization efficiencies of both Si and the H2 gas for SiH4 gas formation were discussed. The main etch product was determined to be SiH4 and the developed plasma source achieved a SiH4 generation rate of 10 sccm (standard cubic centimeters per minute) at an input power of 900 W. In addition, the Si utilization efficiency exceeded 60%.

Single-source-precursor synthesis of dense SiC/HfCxN1-x-based ultrahigh-temperature ceramic nanocomposites

Science.gov (United States)

Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; Guillon, Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

2014-10-01

A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfCxN1-x-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfCxN1-x-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfCxN1-x-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm-1, the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm-1.A novel single-source precursor was synthesized by the reaction of an allyl hydrido

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

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Siming Chen

2015-06-01

Full Text Available Direct integration of III–V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III–V materials and Si substrates have fundamentally limited monolithic epitaxy of III–V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs as dislocation filter layers (DFLs to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD laser that lases up to 111 °C, with a low threshold current density of 200 A/cm2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ～1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III–V light emitters on Si substrates.

Effects of B4C Addition on the Laser Beam Welding Characteristics of Al/SiC MMCs Produced By P/M

Directory of Open Access Journals (Sweden)

Serdar KARAOĞLU

2011-01-01

Full Text Available Fusion weldability characteristics of metal matrix composites (MMC produced by powder metallurgy (P/M are usually insufficient due to unwanted micro-structural changes that occur during welding. This study aims to investigate the effects of B4C addition as reinforcement on the weld quality of Al/SiC MMCs. After the production of Al/SiC MMCs by P/M with or without the addition of B4C, laser beam welding (LBW characteristics of the materials were investigated by focusing on the integrity of the welds. Optical microscopy (OM, scanning electron microscopy (SEM, and energy dispersive X-ray analysis (EDX were utilized for the characterization of the welds. Results show that Al/SiC MMCs produced by P/M can not be easily welded by LBW, but weldability characteristics of the material can be improved by the addition of B4C.

Thermal shock properties of 2D-SiCf/SiC composites

International Nuclear Information System (INIS)

Lee, Sang Pill; Lee, Jin Kyung; Son, In Soo; Bae, Dong Su; Kohyama, Akira

2012-01-01

This paper dealt with the thermal shock properties of SiC f /SiC composites reinforced with two dimensional SiC fabrics. SiC f /SiC composites were fabricated by a liquid phase sintering process, using a commercial nano-size SiC powder and oxide additive materials. An Al 2 O 3 –Y 2 O 3 –SiO 2 powder mixture was used as a sintering additive for the consolidation of SiC matrix region. In this composite system, Tyranno SA SiC fabrics were also utilized as a reinforcing material. The thermal shock test for SiC f /SiC composites was carried out at the elevated temperature. Both mechanical strength and microstructure of SiC f /SiC composites were investigated by means of optical microscopy, SEM and three point bending test. SiC f /SiC composites represented a dense morphology with a porosity of about 8.2% and a flexural strength of about 160 MPs. The characterization of SiC f /SiC composites was greatly affected by the history of cyclic thermal shock. Especially, SiC f /SiC composites represented a reduction of flexural strength at the thermal shock temperature difference higher than 800 °C.

Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

International Nuclear Information System (INIS)

Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

2015-01-01

We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

Energy Technology Data Exchange (ETDEWEB)

Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wrocaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Drzik, Milan [International Laser Center, Ilkovicova 3, 841-04 Bratislava 4 (Slovakia)

2015-07-15

GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grown with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.

Hydrogen activated axial inter-conversion in SiC nanowires

International Nuclear Information System (INIS)

Ruemmeli, Mark H.; Adebimpe, David B.; Borowiak-Palen, Ewa; Gemming, Thomas; Ayala, Paola; Ioannides, Nicholas; Pichler, Thomas; Huczko, Andrzej; Cudzilo, Stanislaw; Knupfer, Martin; Buechner, Bernd

2009-01-01

A facile low pressure annealing route using NH 3 as a hydrogen source for the structural and chemical modification of SiC nanowires (SiCNWs) is presented. The developed route transforms SiCNWs into tubular SiC nanostructures while coaxial SiO 2 /SiCNWs reverse their sheath/core structure. Our findings suggest a decomposition process induced via the preferential substitution of silicon by hydrogen and via the difference in diffusion rates of available atomic species, which leads to axial structural rearrangement. In addition to these effects, the procedure improves the crystallinity of the samples. The process could be exploited as a viable route to manipulate a variety of nanostructures and films for doping and etching and structural manipulation. - Graphical abstract: SiC and SiO 2 /SiCNWs are shown to be structurally modified through a hydrogen activated replacement route which can even lead to the axial inter-conversion of species. The process could be exploited as a viable route to manipulate a variety of nanostructures and films for doping and etching and structural manipulation

Applications of Si/SiGe heterostructures to CMOS devices

International Nuclear Information System (INIS)

Sidek, R.M.

1999-03-01

For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

Dielectric properties of PMMA-SiO2 hybrid films

KAUST Repository

Morales-Acosta, M. D.; Quevedo-Ló pez, Manuel Angel Quevedo; Alshareef, Husam N.; Gnade, Bruce E.; Ramí rez-Bon, Rafael

2010-01-01

Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

Dielectric properties of PMMA-SiO2 hybrid films

KAUST Repository

Morales-Acosta, M. D.

2010-03-01

Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

Lateral boron distribution in polycrystalline SiC source materials

DEFF Research Database (Denmark)

Linnarsson, M. K.; Kaiser, M.; Liljedahl, R.

2013-01-01

. The materials are co-doped materials with nitrogen and boron to a concentration of 1x1018 cm-3 and 1x1019 cm-3, respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron...

Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

International Nuclear Information System (INIS)

Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

2008-01-01

Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

The influence of SiO2 Addition on 2MgO-Al2O3-3.3P2O5 Glass

DEFF Research Database (Denmark)

Larsen, P.H.; Poulsen, F.W.; Berg, Rolf W.

1999-01-01

2MgO-Al2O3-3.3P2O5 glasses with increasing amounts of SiO2 are considered for sealing applications in Solid Oxide Fuel Cells (SOFC). The change in chemical durability under SOFC anode conditions and the linear thermal expansion is measured as functions of the SiO2 concentration. Raman spectroscopy...... analysis of the glasses reveals no sign of important changes in the glass structure upon SiO2 addition. Some increase in glass durability with SiO2 concentration is reported and its cause is discussed....

Effect of MoSi2 addition and particle size of SiC on pressureless sintering behavior and mechanical properties of ZrB2–SiC–MoSi2 composites

Directory of Open Access Journals (Sweden)

Mehri Mashhadi

2016-07-01

Full Text Available In the present paper, ZrB2–SiC–MoSi2 composites were prepared by pressureless sintering at temperatures of 2050, 2100 and 2150 °C for 1 h under argon atmosphere. In order to prepare composite samples, ZrB2 powder was milled for 2 h, then the reinforcing particles including of micron and nano-sized SiC powder were added. MoSi2 was added to ZrB2 from 0 to 5 wt.% as sintering aid. The mixtures were formed and, after the pyrolysis, they were sintered. Densification, microstructure and mechanical properties of ZrB2–SiC composites were investigated. The shrinkage of samples was measured, and the microstructure of samples was examined using scanning electron microscopy (SEM, equipped with EDS spectroscopy. In order to examine the oxidation behavior, the samples were heat treated at 1500 °C in air and then their weight changes were measured. Room temperature mechanical properties were examined. Mass fraction of MoSi2, particle size of SiC powder and sintering temperature have a great effect on relative density, porosity, shrinkage, hardness, fracture toughness, oxidation resistance and microstructure of these composites. The highest relative density, hardness, fracture toughness and weight changes of 98.7%, 16.17 GPa, 3 MPa m1/2 and 0.28%, respectively, were obtained in ZrB2–10 wt.%SiCnano–4 wt.%MoSi2 composites sintered at 2150 °C.

The influence of wall thickness on the microstructure of bronze BA1055 with the additions of Si, Cr, Mo and/or W

Directory of Open Access Journals (Sweden)

B.P. Pisarek

2008-12-01

Full Text Available Aluminium bronzes belong to the high-grade constructional materials applied on the put under strongly load pieces of machines, about good sliding, resistant properties on corrosion both in the cast state how and after the thermal processing. It moves to them Cr and Si in the aim of the improvement of their usable proprieties. Additions Mo and/or W were not applied so far in the larger concentration, these elements were introduced to the melts of the copper as the components of modifiers. It was worked out therefore the new kind of bronzes casting including these elements. Make additions to the Cu-Al-Fe-Ni bronze of Si, Cr, Mo and/or W in the rise of these properties makes possible. The investigations of the influence of the wall thickness of the cast on size of crystallites were conducted: the primary phase β and intermetallic phase κ and the width separates of the secondary phase α precipitate at phase boundary. It results from conducted investigations, that in the aluminium bronze BA1055 after simultaneous makes additions Si, Cr, Mo and in the primary phase β it undergoes considerable reducing size. The addition W reduce size of the grain phase β in the thin walls of the cast 3-6 mm, and addition Cr in the range of the thickness of the wall of the cast 3-6 mm it favors to reducing size the phase β, in walls 12-25 mm the growth causes it. The addition Mo does not influence the change of the size of the grain of the β phase significantly. The make addition singly or simultaneously of the Cr, Mo and W to the bronze CuAl10Fe5Ni5Si it influences the decrease of the quantity separates of the phase α on the interface boundary and of width it separates independently from the thickness of the wall of the cast. The simultaneous make addition of the Si, Cr, Mo and W it enlarges the surface of the phase κFe, κMo. The make addition to the bronze CuAl10Fe5Ni5Si of the Cr, Mo or W the quantity of crystallizing hard phase κ enlarges and the

Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

NARCIS (Netherlands)

Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

2010-01-01

Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

Microprocessing of ITO and a-Si thin films using ns laser sources

Science.gov (United States)

Molpeceres, C.; Lauzurica, S.; Ocaña, J. L.; Gandía, J. J.; Urbina, L.; Cárabe, J.

2005-06-01

Selective ablation of thin films for the development of new photovoltaic panels and sensoring devices based on amorphous silicon (a-Si) is an emerging field, in which laser micromachining systems appear as appropriate tools for process development and device fabrication. In particular, a promising application is the development of purely photovoltaic position sensors. Standard p-i-n or Schottky configurations using transparent conductive oxides (TCO), a-Si and metals are especially well suited for these applications, appearing selective laser ablation as an ideal process for controlled material patterning and isolation. In this work a detailed study of laser ablation of a widely used TCO, indium-tin-oxide (ITO), and a-Si thin films of different thicknesses is presented, with special emphasis on the morphological analysis of the generated grooves. Excimer (KrF, λ = 248 nm) and DPSS lasers (λ = 355 and λ = 1064 nm) with nanosecond pulse duration have been used for material patterning. Confocal laser scanning microscopy (CLSM) and scanning electron microscopy (SEM) techniques have been applied for the characterization of the ablated grooves. Additionally, process parametric windows have been determined in order to assess this technology as potentially competitive to standard photolithographic processes. The encouraging results obtained, with well-defined ablation grooves having thicknesses in the order of 10 µm both in ITO and in a-Si, open up the possibility of developing a high-performance double Schottky photovoltaic matrix position sensor.

Si light-emitting device in integrated photonic CMOS ICs

Science.gov (United States)

Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

2017-07-01

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

Influence of Si and N additions on structure and phase stability of Ge{sub 2}Sb{sub 2}Te{sub 5} thin films

Energy Technology Data Exchange (ETDEWEB)

Koelpin, Helmut; Music, Denis; Mykhaylonka, Ruslan; Schneider, Jochen M [Materials Chemistry, RWTH Aachen University, D-52056 Aachen (Germany); Laptyeva, Galyna; Ghadimi, Reza; Richter, Silvia; Mayer, Joachim [Central Facility for Electron Microscopy, RWTH Aachen University, Ahornstrasse 55, D-52074 Aachen (Germany); Merget, Florian [Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstrasse 24, D-52074 Aachen (Germany)

2009-10-28

The influence of Si and N in Ge{sub 2}Sb{sub 2}Te{sub 5} (space group Fm3-barm) on structure and phase stability thereof was studied experimentally by thin film growth and characterization as well as theoretically by ab initio calculations. It was found that Si and N most probably accumulate in the amorphous matrix embedding Ge{sub 2}Sb{sub 2}Te{sub 5} grains. The incorporation of Si and N in these samples causes an increase of the crystallization temperature and the formation of finer grains. N is more efficient in increasing the crystallization temperature and in reducing the grain size than Si which can be understood based on the bonding analysis. The incorporation of both Si and N in Ge{sub 2}Sb{sub 2}Te{sub 5} is energetically unfavourable, leading to finer grains and larger crystallization temperatures. While in the case of Si additions no significant changes in bonding are observed, N additions appear to enable the formation of strong Te-N bonds in the amorphous matrix, which are shown to be almost twice as strong as the strongest bonds in unalloyed Ge{sub 2}Sb{sub 2}Te{sub 5}.

Effects of Na2WO4 and Na2SiO3 additives in electrolytes on microstructure and properties of PEO coatings on Q235 carbon steel

International Nuclear Information System (INIS)

Wang Yunlong; Jiang Zhaohua; Yao Zhongping

2009-01-01

Ceramic coatings were achieved on Q235 carbon steel by plasma electrolytic oxidation in aluminate system with and without Na 2 WO 4 and Na 2 SiO 3 additives in electrolyte. Influence of Na 2 WO 4 and Na 2 SiO 3 on surface morphology, phase and elemental composition of PEO coatings were examined by means of scanning electron microscope (SEM), thin-film X-ray diffraction (TF-XRD) and energy dispersive X-ray spectroscopy (EDS). Effects of the two additives on the properties of the coatings including surface roughness, surface micro hardness and friction coefficient were studied. The results showed that W from Na 2 WO 4 and Si from Na 2 SiO 3 in electrolytes entered into the coatings. Na 2 WO 4 additive had no evident effect on phase composition of the coating, while Na 2 SiO 3 additive resulted in the coating changing from crystalline state to amorphous state and increased the content of P in the coating. Both additives reduced the surface roughness of the coatings. With Na 2 WO 4 or Na 2 SiO 3 into the electrolytes, the surface micro hardness of the coating was enhanced to 1433 and 1478, respectively, and the friction coefficients were also decreased to below 0.1.

Sintering of Si C by hot-pressing with addition of Al2O3 and concentrate of rare earths

International Nuclear Information System (INIS)

Hwang, M.K.; Silva, C.R.M.

2004-01-01

Silicon carbide (SiC) has essentially covalent bonds (∼88%). The high covalency bond is responsible for the good mechanical properties, although it induces a low self diffusion coefficient, making densification more difficult. For a successful densification is necessary to apply pressure on the samples, and/or the addition of sintering additives, which improves the densification. In this SiC samples with alumina (Al2O3) and concentrate of rare earth (CRE) addition were sintered by hot pressing in argon atmospheric at 20 MPa of pressure, heating rate of 20 deg C/min up to 1800 deg C and a dwell time of 1 h. Initially the CRE was calcined at 1000 deg C during 1 h. After that, three mixtures were prepared with distinct concentrations in high energy mill and the samples were sintered. The aim of this work is to improve SiC densification by the liquid phase formation during sintering owing to the additives reactions between itself. The pressure intensify the driving force for densification, taking the liquid phase to drain easier through the grain boundaries, making possible best accommodation and rearrangement of the grains. The application of the pressure on the samples during sintering contributes to improve densification and becomes possible sintering in lower temperature than conventional one. The phases of the sintered samples were analyzed by X-ray diffraction and the morphology were verified by scanning electron microscopy. (author)

Enriching 28Si beyond 99.9998 % for semiconductor quantum computing

Science.gov (United States)

Dwyer, K. J.; Pomeroy, J. M.; Simons, D. S.; Steffens, K. L.; Lau, J. W.

2014-08-01

Using a laboratory-scale apparatus, we enrich 28Si and produce material with 40 times less residual 29Si than previously reported. Starting from natural abundance silane gas, we offer an alternative to industrial gas centrifuges for providing materials critical for long spin coherence times in quantum information devices. Using a mass spectrometry approach, silicon ions are produced from commercial silane gas and the isotopes are separated in a magnetic sector analyzer before deposition onto a Si(1 0 0) substrate. Isotope fractions for 29Si and 30Si of <1 × 10-6 are found in the deposited films using secondary ion mass spectrometry. Additional assessments of the deposited films are also presented as we work to develop substrates and source material to support the growing silicon quantum computing community. Finally, we demonstrate modulation of the 29Si concentration in a deposited film as a precursor to dual enrichment of heterostructures and compound materials such as 28Si74Ge.

Chemical vapor deposition of Si/SiC nano-multilayer thin films

International Nuclear Information System (INIS)

Weber, A.; Remfort, R.; Woehrl, N.; Assenmacher, W.; Schulz, S.

2015-01-01

Stoichiometric SiC films were deposited with the commercially available single source precursor Et_3SiH by classical thermal chemical vapor deposition (CVD) as well as plasma-enhanced CVD at low temperatures in the absence of any other reactive gases. Temperature-variable deposition studies revealed that polycrystalline films containing different SiC polytypes with a Si to carbon ratio of close to 1:1 are formed at 1000 °C in thermal CVD process and below 100 °C in the plasma-enhanced CVD process. The plasma enhanced CVD process enables the reduction of residual stress in the deposited films and offers the deposition on temperature sensitive substrates in the future. In both deposition processes the film thickness can be controlled by variation of the process parameters such as the substrate temperature and the deposition time. The resulting material films were characterized with respect to their chemical composition and their crystallinity using scanning electron microscope, energy dispersive X-ray spectroscopy (XRD), atomic force microscopy, X-ray diffraction, grazing incidence X-ray diffraction, secondary ion mass spectrometry and Raman spectroscopy. Finally, Si/SiC multilayers of up to 10 individual layers of equal thickness (about 450 nm) were deposited at 1000 °C using Et_3SiH and SiH_4. The resulting multilayers features amorphous SiC films alternating with Si films, which feature larger crystals up to 300 nm size as measured by transmission electron microscopy as well as by XRD. XRD features three distinct peaks for Si(111), Si(220) and Si(311). - Highlights: • Stoichiometric silicon carbide films were deposited from a single source precursor. • Thermal as well as plasma-enhanced chemical vapor deposition was used. • Films morphology, crystallinity and chemical composition were characterized. • Silicon/silicon carbide multilayers of up to 10 individual nano-layers were deposited.

Single-source-precursor synthesis of dense SiC/HfC(x)N(1-x)-based ultrahigh-temperature ceramic nanocomposites.

Science.gov (United States)

Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; Guillon, Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

2014-11-21

A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfC(x)N(1-x)-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfC(x)N(1-x)-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfC(x)N(1-x)-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm(-1), the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm(-1).

Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

Science.gov (United States)

Rao, A. V. Narasimha; Swarnalatha, V.; Pal, P.

2017-12-01

Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH2OH) in 20 wt% KOH solution. The concentration of NH2OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH2OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH2OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO2.

The synergistic effect of Li addition on microstructure, texture and mechanical properties of extruded Al–Mg–Si alloys

Energy Technology Data Exchange (ETDEWEB)

Ud Din, Shamas; Kamran, J. [Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering and Applied Sciences (PIEAS), Nilore, Islamabad, 45650 (Pakistan); Tariq, N.H., E-mail: naeem421@hotmail.com [Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering and Applied Sciences (PIEAS), Nilore, Islamabad, 45650 (Pakistan); Hasan, B.A. [Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering and Applied Sciences (PIEAS), Nilore, Islamabad, 45650 (Pakistan); Petrov, R.H.; Bliznuk, V. [Ghent University, Department of Materials Science and Engineering, Technologiepark 903, Gent (Belgium); Uz Zuha, Shamas [Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering and Applied Sciences (PIEAS), Nilore, Islamabad, 45650 (Pakistan)

2016-05-01

In the present work, 0, 1, 2 and 3 wt.% Li was added to conventional Al-0.9Mg-0.5Si alloy. The samples were extruded and aged to investigate the effect of Li addition on microstructure, texture and mechanical properties. The density of conventional alloy was reduced up to 7.8% while the ultimate tensile strength (UTS) increased by 62% with 3% Li addition. Electron backscatter diffraction (EBSD) revealed that Li addition effectively refined the grain size of the modified alloys. TEM/EDX and XRD analysis revealed the synergistic effect of Li addition which promoted the formation of nano-sized δ′(Al{sub 3}Li) precipitates when Li content is higher then 1%. The ageing trend first decreased for 1 wt.% Li addition and then increased with increasing Li content from 2 to 3 wt.% at the expense of ductility. The intensity of texture increased with the gradual increase in Li content from alloy-1 to 4. - Highlights: • Study of 0, 1, 2 and 3 wt.% Li on Al–Mg–Si alloys in extruded and T6 condition. • Density reduced to 7.8% with UTS increased by 62% for 3% Li addition. • Texture intensity increased with increase in Li content from alloy-1 to 4. • Property enhancement attributed to a refinement of δ′ (Al{sub 3}Li) precipitates.

Characterization of SiC based composite materials by the infiltration of ultra-fine SiC particles

International Nuclear Information System (INIS)

Lee, J.K.; Lee, S.P.; Byun, J.H.

2010-01-01

The fabrication route of SiC materials by the complex compound of ultra-fine SiC particles and oxide additive materials has been investigated. Especially, the effect of additive composition ratio on the characterization of SiC materials has been examined. The characterization of C/SiC composites reinforced with plain woven carbon fabrics was also investigated. The fiber preform for C/SiC composites was prepared by the infiltration of complex mixture into the carbon fabric structure. SiC based composite materials were fabricated by a pressure assisted liquid phase sintering process. SiC materials possessed a good density higher than about 3.0 Mg/m 3 , accompanying the creation of secondary phase by the chemical reaction of additive materials. C/SiC composites also represented a dense morphology in the intra-fiber bundle region, even if this material had a sintered density lower than that of monolithic SiC materials. The flexural strength of SiC materials was greatly affected by the composition ratio of additive materials.

effects of sulphur addition on addition on and mechanical properties

African Journals Online (AJOL)

User

on the microstructure and mechanical properties of sand cast been investigated ... owed that the addition of sulphur to Al-12wt%Si alloy. 12wt%Si alloy .... 28 materials. 29. Element. Aluminum. Silicon. Al. Si. Ca. Fe. Cu. Zn. Mn. Mg. Cr. B. 99.71.

Influence of the Sr and Mg Alloying Additions on the Bonding Between Matrix and Reinforcing Particles in the AlSi7Mg/SiC-Cg Hybrid Composite

Directory of Open Access Journals (Sweden)

Dolata A. J.

2016-06-01

Full Text Available The aim of the work was to perform adequate selection of the phase composition of the composite designated for permanent - mould casting air compressor pistons. The hybrid composites based on AlSi7Mg matrix alloy reinforced with mixture of silicon carbide (SiC and glassy carbon (Cg particles were fabricated by the stir casting method. It has been shown that the proper selection of chemical composition of matrix alloy and its modification by used magnesium and strontium additions gives possibility to obtain both the advantageous casting properties of composite suspensions as well as good bonding between particles reinforcements and matrix.

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Energy Technology Data Exchange (ETDEWEB)

Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

2015-03-14

The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

Effect of low cost iron oxide with Si additive on structural properties of Ni-Zn ferrite

International Nuclear Information System (INIS)

Ghazanfar, U.

2010-01-01

Mixed Ni-Zn ferrites (x = 0.66, 0.77, 0.88, 0.99) were prepared by double sintering ceramic method using locally available low cost Fe/sub 2/O/sub 3/ with 0.5% (by wt) of Si additive. The chemical phase analysis, carried out by X-ray powder diffraction method, confirms the major phase of Ni-Zn ferrite. Study of the effect of composition on structural properties of ferrite system revealed a decreasing trend of lattice parameters with increasing Ni content. X-ray density and mass density increase with increasing Ni content, which in turn decreases the porosity due to successive presence of Si in Fe/sub 2/O/sub 3/. This decrease in porosity along with chemical homogeneities, distribution of phases and grain formation were also observed in scanning electron micrographs. (author)

Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

Directory of Open Access Journals (Sweden)

Dan Zhu

2014-03-01

Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

The effects of Cu addition on the microstructure and thermal stability of an Al-Mg-Si alloy

International Nuclear Information System (INIS)

Man, Jin; Jing, Li; Jie, Shao Guang

2007-01-01

The effects of Cu addition on the microstructure and thermal stability of 6082 Al-Mg-Si alloys were investigated. The results show the Q' precipitates are formed when aged at 170 o C for 4 h in 6082 alloy with 0.6% Cu addition. The hardness value of the alloy with 0.6% Cu is always distinctly higher than that of the alloy without Cu during isothermal treatment at 250 o C. Based on the TEM and three-dimensional atom probe (3DAP) results, the thermal stability of the 6082 alloys with Cu addition is discussed with respect to the distribution of Cu

Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

Institute of Scientific and Technical Information of China (English)

蔡艳芝; 殷小玮; 尹洪峰

2015-01-01

The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

Optimization of heat treatment parameters for additive manufacturing and gravity casting AlSi10Mg alloy

Science.gov (United States)

Girelli, L.; Tocci, M.; Montesano, L.; Gelfi, M.; Pola, A.

2017-11-01

Additive manufacturing of metals is a production process developed in the last few years to realize net shape components with complex geometry and high performance. AlSi10Mg is one of the most widely used aluminium alloys, both in this field and in conventional foundry processes, for its significant mechanical properties combined with good corrosion resistance. In this paper the effect of heat treatment on AlSi10Mg alloy was investigated. Solution and ageing treatments were carried out with different temperatures and times on samples obtained by direct metal laser sintering and gravity casting in order to compare their performance. Microstructural analyses and hardness tests were performed to investigate the effectiveness of the heat treatment. The results were correlated to the sample microstructure and porosity, analysed by means of optical microscopy and density measurements. It was found that, in the additive manufactured samples, the heat treatment can reduce significantly the performance of the alloy also because of the increase of porosity due to entrapped gas during the deposition technique and that the higher the solution temperature the higher the increase of such defects. A so remarkable effect was not found in the conventional cast alloy.

Influence of Si addition on the microstructure and mechanical properties of Ti-35Nb alloy for applications in orthopedic implants.

Science.gov (United States)

Tavares, A M G; Ramos, W S; de Blas, J C G; Lopes, E S N; Caram, R; Batista, W W; Souza, S A

2015-11-01

In the development of new materials for orthopedic implants, special attention has been given to Ti alloys that show biocompatible alloy elements and that are capable of reducing the elastic modulus. Accordingly, Ti-Nb-Si alloys show great potential for application. Thus, this is a study on the microstructures and properties of Ti-35Nb-xSi alloys (x=0, 0.15, 0.35 and 0.55) (wt%) which were thermally treated and cooled under the following conditions: furnace cooling (FC), air cooling (AC), and water quenching (WQ). The results showed that Si addition is effective to reduce the density of omega precipitates making beta more stable, and to produce grain refinement. Silicides, referred as (Ti,Nb)3Si, were formed for alloys containing 0.55% Si, and its formation presumably occurred during the heating at 1000°C. In all cooling conditions, the hardness values increased with the increasing of Si content, as a result from the strong Si solid solution strengthening effect, while the elastic modulus underwent a continuous reduction due to the reduction of omega precipitates in beta matrix. Lower elastic moduli were observed in water-quenched alloys, which concentration of 0.15% Si was more effective in their reduction, with value around 65 GPa. Regarding Ti-35Nb-xSi alloys (x=0, 0.15 and 0.35), the "double yield point" phenomenon, which is typical of alloys with shape memory effect, was observed. The increase in Si concentration also produced an increase from 382 MPa to 540 MPa in the alloys' mechanical strength. Ti-35Nb-0.55Si alloy, however, showed brittle mechanical behavior which was related to the presence of silicides at the grain boundary. Copyright © 2015 Elsevier Ltd. All rights reserved.

Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

Science.gov (United States)

Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

2015-02-01

Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

Study on the Formation of Reaction Phase to Si Addition in Boron Steel Hot-Dipped in Al–7Ni Alloy

Directory of Open Access Journals (Sweden)

Jung-Gil Yun

2017-11-01

Full Text Available In order to reduce the intermetallic compounds formed during the application of an Al–7Ni wt % hot-dip multifunctional coating on boron steel, developed for Tailor Welded Blanks (TWB and hot stamping, 2–6 wt % Si was added to the coating to change the reaction layer. The coating was run at 690 °C for 120 s. Al9FeNi phases were formed on the steel interface, Fe2Al5 was formed on the steel, FeAl3 was generated between the existing layers, and flake-type Al2Fe3Si3 was formed in the Fe2Al5 phase, depending on the Si content. In addition, as Si was added to the coating, the thickness of the Fe2Al5 phase decreased and the thickness of the Al9FeNi phase and Al2Fe3Si3 increased. The decrease in the thickness of the Fe2Al5 phase was mainly due to the effect of the Si solid solution and the Al2Fe3Si3 formation in the Fe2Al5 phase. The reason for the growth of Al9FeNi is that the higher the Si content in the coating, the more the erosion of the interface of the steel material due to the coating solution. Therefore, the outflow of Fe into the coating liquid increased.

SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

Science.gov (United States)

Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

2017-05-01

A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

Effect of Ti and Si interlayer materials on the joining of SiC ceramics

Energy Technology Data Exchange (ETDEWEB)

Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2016-08-15

SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

A new technique to modify hypereutectic Al-24%Si alloys by a Si-P master alloy

Energy Technology Data Exchange (ETDEWEB)

Wu Yaping; Wang Shujun; Li Hui [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, 73 Jingshi Road, Jinan 250061 (China); Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, 73 Jingshi Road, Jinan 250061 (China)], E-mail: xfliu@sdu.edu.cn

2009-05-27

The modification effect of a Si-P master alloy on Al-24%Si alloy was investigated by using electron probe micro-analyzer (EPMA) and optical microscopy (OM). The dissolution problem of the Si-P master alloys was solved by changing the sequence of addition. When the Si-P master alloy was added into Al melt before the addition of silicon, the best modification effect could be achieved. The modification parameters of the master alloy on Al-24%Si alloy were optimized through designing and analyzing the orthogonal experiment, and their influences on the modification effect were discussed. The results show that the influence of temperature on the modification effect is the greatest, followed by the addition level, and the holding time is the least. The optimized modification parameters are the modification temperature of 810 deg. C, the addition level of 0.35 wt.%, the holding time of 30 min + 50 min whose meaning is that the Si-P master alloy is added firstly to the molten Al, and silicon is added 30 min later, then holding another 50 min. In addition, the modification mechanism of the Si-P master alloy on Al-24%Si alloy was also discussed.

Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

International Nuclear Information System (INIS)

Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

2014-01-01

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

SiC-BASED HYDROGEN SELECTIVE MEMBRANES FOR WATER-GAS-SHIFT REACTION; F

International Nuclear Information System (INIS)

Paul K.T. Liu

2001-01-01

This technical report summarizes our activities conducted in Yr II. In Yr I we successfully demonstrated the feasibility of preparing the hydrogen selective SiC membrane with a chemical vapor deposition (CVD) technique. In addition, a SiC macroporous membrane was fabricated as a substrate candidate for the proposed SiC membrane. In Yr II we have focused on the development of a microporous SiC membrane as an intermediate layer between the substrate and the final membrane layer prepared from CVD. Powders and supported thin silicon carbide films (membranes) were prepared by a sol-gel technique using silica sol precursors as the source of silicon, and phenolic resin as the source of carbon. The powders and films were prepared by the carbothermal reduction reaction between the silica and the carbon source. The XRD analysis indicates that the powders and films consist of SiC, while the surface area measurement indicates that they contain micropores. SEM and AFM studies of the same films also validate this observation. The powders and membranes were also stable under different corrosive and harsh environments. The effects of these different treatments on the internal surface area, pore size distribution, and transport properties, were studied for both the powders and the membranes using the aforementioned techniques and XPS. Finally the SiC membrane materials are shown to have satisfactory hydrothermal stability for the proposed application. In Yr III, we will focus on the demonstration of the potential benefit using the SiC membrane developed from Yr I and II for the water-gas-shift (WGS) reaction

Effect of surface irradiation during the photo-CVD deposition of a-Si:H thin films. Hikari CVD ho ni yoru amorphous silicon sakuseiji no kiban hikari reiki koka

Energy Technology Data Exchange (ETDEWEB)

Tasaka, K.; Doering, H.; Hashimoto, K.; Fujishima, A. (The University of Tokyo, Tokyo (Japan))

1990-12-06

This paper shows the impact of the irradiation from an additional light source during the deposition of hydrogenated amorphous silicon by photo-CVD deposition. Using a mercury sensitized photo-CVD process from Disilan (Si {sub 2} H {sub 6}) and hydrogen, silicon was deposited. A 40W low pressure mercury lamp was applied as the light source. A portion of the substrate was in addition irradiated using an Xg-He lamp through a thermal filter. Irradiation of the substrate using only Xg-He lamp produced no deposition, since this light has a wavelength which is too long to produce the SiH {sub 3}-radicals needed for Si deposition. The additional Xg-He light source was discovered to cause an increased thickness of deposited a-Si:H film and a transmission of the band structure. The reasons of these are considered that the influence of irradiation is not limited to film thickness, but that irradiation also impacts the composition of the a-Si:H film so as to cause a reduction in the hydrogen content. 10 figs., 1 tab.

Physical studies of strained Si/SiGe heterostructures. From virtual substrates to nanodevices

Energy Technology Data Exchange (ETDEWEB)

Minamisawa, Renato Amaral

2011-10-21

During the past two decades, the decrease in intrinsic delay of MOSFETs has been driven by the scaling of the device dimensions. The performance improvement has relied mostly in the increase of source velocity with gate scaling, while the transport properties of the channel have remained constant, i.e., those of conventional Si. Starting at the 90 nm node, uniaxial strain has been introduced in the transistor channel in order to further increase the source velocity. Beyond the 32 nm node, novel channel materials, with superior carrier velocities, and novel device architectures are required in order to continue the performance enhancement of MOSFETs while preserving the electrostatic control. In this Thesis, different physical aspects of strained Si and SiGe materials are investigated as a mean to increase carrier velocity in MOSFET channels. Novel approaches for the fabrication of strained Si based on ion implantation and anneal induced relaxation of virtual substrates are developed. The strain relaxation of SiGe layers is improved using a buried thin Si:C layer in the Si(100) substrate. Further, a Si{sup +} ion implantation and annealing method is investigated for relaxing virtual substrates using lower implantation dose. Finally, the uniaxial relaxation of {l_brace}110{r_brace} surface oriented substrates is demonstrated using a He ion implantation and anneal technique. Apart of channel material studies, the fundamental and technological challenges involved in the integration of strained Si and SiGe into MOSFETs are assessed. The impact of source and drain formation on the elastic strain and electrical properties of strained Si layers and nanowires is examined. Also, the formation of ultra-shallow junction in strained Si/strained Si{sub 0.5}Ge{sub 0.5}/SSOI heterostructures is investigated using different types of ion implanted specie and annealing. The results show that BF{sup +}{sub 2} implantation and low temperature annealing are suitable approaches for

Meta-analysis on Methane Mitigating Properties of Saponin-rich Sources in the Rumen: Influence of Addition Levels and Plant Sources

Directory of Open Access Journals (Sweden)

Anuraga Jayanegara

2014-10-01

Full Text Available Saponins have been considered as promising natural substances for mitigating methane emissions from ruminants. However, studies reported that addition of saponin-rich sources often arrived at contrasting results, i.e. either it decreased methane or it did not. The aim of the present study was to assess ruminal methane emissions through a meta-analytical approach of integrating related studies from published papers which described various levels of different saponin-rich sources being added to ruminant feed. A database was constructed from published literature reporting the addition of saponin-rich sources at various levels and then monitoring ruminal methane emissions in vitro. Accordingly, levels of saponin-rich source additions as well as different saponin sources were specified in the database. Apart from methane, other related rumen fermentation parameters were also included in the database, i.e. organic matter digestibility, gas production, pH, ammonia concentration, short-chain fatty acid profiles and protozoal count. A total of 23 studies comprised of 89 data points met the inclusion criteria. The data obtained were subsequently subjected to a statistical meta-analysis based on mixed model methodology. Accordingly, different studies were treated as random effects whereas levels of saponin-rich source additions or different saponin sources were considered as fixed effects. Model statistics used were p-value and root mean square error. Results showed that an addition of increasing levels of a saponin-rich source decreased methane emission per unit of substrate incubated as well as per unit of total gas produced (ptea>quillaja, statistically they did not differ each other. It can be concluded that methane mitigating properties of saponins in the rumen are level- and source-dependent.

Microstructure and properties of MoSi2-MoB and MoSi2-Mo5Si3 molybdenum silicides

International Nuclear Information System (INIS)

Schneibel, J.H.; Sekhar, J.A.

2003-01-01

MoSi 2 -based intermetallics containing different volume fractions of MoB or Mo 5 Si 3 were fabricated by hot-pressing MoSi 2 , MoB, and Mo 5 Si 3 powders in vacuum. Both classes of alloys contained approximately 5 vol.% of dispersed silica phase. Additions of MoB or Mo 5 Si 3 caused the average grain size to decrease. The decrease in the grain size was typically accompanied by an increase in flexure strength, a decrease in the room temperature fracture toughness, and a decrease in the hot strength (compressive creep strength) measured around 1200 deg. C, except when the Mo 5 Si 3 effectively became the major phase. Oxidation measurements on the two classes of alloys were carried out in air. Both classes of alloys were protected from oxidation by an in-situ adherent scale that formed on exposure to high temperature. The scale, although not analyzed in detail, is commonly recognized in MoSi 2 containing materials as consisting mostly of SiO 2 . The MoB containing materials showed an increase in the scale thickness and the cyclic oxidation rate at 1400 deg. C when compared with pure MoSi 2 . However, in contrast with the pure MoSi 2 material, oxidation at 1400 deg. C began with a weight loss followed by a weight gain and the formation of the protective silica layer. The Mo 5 Si 3 containing materials experienced substantial initial weight losses followed by regions of small weight changes. Overall, the MoB and Mo 5 Si 3 additions to MoSi 2 tended to be detrimental for the mechanical and oxidative properties

SI: The Stellar Imager

Science.gov (United States)

Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

2006-01-01

The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

Uso da técnica de dilatometria no estudo do efeito de diferentes aditivos na sinterização de Si3N4 Use of dilatometry to study the effect of different additives on the sintering of Si3N4

Directory of Open Access Journals (Sweden)

S. Ribeiro

2000-03-01

Full Text Available Nos últimos anos vem sendo testados óxidos de terras raras pesadas como aditivos de sinterização, via fase líquida, do nitreto de silício (Si3N4. Este trabalho visou o estudo do comportamento da sinterização do Si3N4 aditivado com um concentrado de óxidos de ítrio e terras raras pesadas e sílica, nas quantidades de 14 e 21%. Os resultados obtidos foram comparados com os apresentados quando do uso de óxido de ítrio e sílica, amplamente conhecidos como aditivos de sinterização de cerâmicas covalentes. Foi comparada também a influência da forma em que os aditivos foram usados, óxidos e dissilicatos. As experiências foram realizadas num dilatômetro e os resultados da sinterização são dados em termos de retração linear e velocidade de retração. Verificou-se que as amostras com maior quantidade de aditivos apresentaram maiores retrações, bem como velocidades de retração superiores. Para as amostras aditivadas com 14 e 21% de Y2O3/SiO2, os resultados foram de 13,1 e 15,5%, respectivamente, e para as aditivadas com concentrado/SiO2, 13,7 e 15,7%, respectivamente. Além disso, maiores retrações e razão de retração foram observadas para amostras com dissilicatos como aditivos, em comparação às amostras com a correspondente mistura de óxidos. Em todos os casos, as amostras aditivadas com o concentrado/SiO2, apresentaram retrações e velocidades de retração superiores às apresentadas pelas aditivadas com Y2O3/SiO2, mostrando ser mais eficiente como aditivo de sinterização do Si3N4.In recent years heavy rare earth oxides have been investigated as sinter additives in the liquid phase sintering of silicon nitride, Si3N4. This work reports on comparative sintering experiments of Si3N4 with yttria/silica and rare earth oxide concentrate/silica additions. The additive contents used were 14 and 21 vol%. The influence of pure oxide additions was compared to that of pre-reacted disilicates. The experiments were

Nanoscale Structuring by Misfit Dislocations in Si1-xGex/Si Epitaxial Systems

DEFF Research Database (Denmark)

Shiryaev, S.Y.; Jensen, Flemming; Hansen, J. Lundsgaard

1997-01-01

New capabilities of misfit dislocations for spatial manipulation of islands in Si1-xGex/Si heteroepitaxial systems have been elucidated. Formation of highly ordered Ge-island patterns on substrates prestructured by slip bands of misfit dislocations is revealed. The major sources leading to the or...

Determination of Cr, Mn, Si, and Ni in carbon steels by optical emission spectrometry with spark source

International Nuclear Information System (INIS)

Garcia Gonzalez, M.A.; Pomares Alfonso, M.; Mora Lopez, L.

1995-01-01

Elemental composition of steels determines some important of his characteristic moreover it is necessary to obtain their quality certification. Analytical procedure has performed for determination of Cr, Mn, Si and Ni in carbon steels by optical emission spectrometry with spark source. reproducibility of results is 5-11 %. Exactitude has tested with results that have obtained by internationally recognised methods-

Effect of Cr and Mn addition and heat treatment on AlSi3Mg casting alloy

Energy Technology Data Exchange (ETDEWEB)

Tocci, Marialaura, E-mail: m.tocci@unibs.it [Department of Mechanical and Industrial Engineering, University of Brescia, Via Branze 38, 25123 Brescia (Italy); Donnini, Riccardo, E-mail: riccardo.donnini@cnr.it [National Research Council of Italy (CNR), Institute of Condensed Matter Chemistry and Technologies for Energy (ICMATE), Via R. Cozzi 53, 20125 Milan (Italy); Angella, Giuliano, E-mail: giuliano.angella@cnr.it [National Research Council of Italy (CNR), Institute of Condensed Matter Chemistry and Technologies for Energy (ICMATE), Via R. Cozzi 53, 20125 Milan (Italy); Pola, Annalisa, E-mail: annalisa.pola@unibs.it [Department of Mechanical and Industrial Engineering, University of Brescia, Via Branze 38, 25123 Brescia (Italy)

2017-01-15

In the present paper the effect of heat treatment on an AlSi3Mg alloy with and without Cr and Mn addition was investigated. Beside the well-known modification of the morphology of Fe-containing intermetallics, it was found that Cr and Mn allowed the formation of dispersoids in the aluminium matrix after solution heat treatment at 545 °C, as shown by scanning transmission electron microscope observations. These particles were responsible of the enhanced Vickers microhardness of the aluminium matrix in comparison with the base alloy after solution treatment and quenching, according to dispersion hardening mechanism. The presence of these particles was not affected by ageing treatment, which instead allowed the precipitation of β-Mg{sub 2}Si, as shown by the elaboration of differential scanning calorimeter curves. The formation of dispersoids and the study of their effect on mechanical properties can represent an interesting development for applications at high temperatures of casting alloys due to their thermal stability compared to other strengthening phases as β-Mg{sub 2}Si. - Highlights: •Cr and Mn successfully modified the morphology of Fe-containing intermetallics. •Cr- and Mn-dispersoids formed in the aluminium matrix during solution treatment. •Dispersion hardening was detected after solution treatment for Cr-containing alloy. •The dispersion hardening effect was maintained after ageing treatment.

Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

International Nuclear Information System (INIS)

Wu Yuying; Liu Xiangfa; Jiang Binggang; Huang Chuanzhen

2009-01-01

Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

Energy Technology Data Exchange (ETDEWEB)

Wu Yuying [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China)], E-mail: wyy532001@163.com; Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Shandong Binzhou Bohai Piston Co., Ltd., Binzhou 256602, Shandong (China); Jiang Binggang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Huang Chuanzhen [School of Mechanical Engineering, Shandong University, Jinan 250061 (China)

2009-05-27

Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

Graphene synthesis on SiC: Reduced graphitization temperature by C-cluster and Ar-ion implantation

International Nuclear Information System (INIS)

Zhang, R.; Li, H.; Zhang, Z.D.; Wang, Z.S.; Zhou, S.Y.; Wang, Z.; Li, T.C.; Liu, J.R.; Fu, D.J.

2015-01-01

Thermal decomposition of SiC is a promising method for high quality production of wafer-scale graphene layers, when the high decomposition temperature of SiC is substantially reduced. The high decomposition temperature of SiC around 1400 °C is a technical obstacle. In this work, we report on graphene synthesis on 6H–SiC with reduced graphitization temperature via ion implantation. When energetic Ar, C 1 and C 6 -cluster ions implanted into 6H–SiC substrates, some of the Si–C bonds have been broken due to the electronic and nuclear collisions. Owing to the radiation damage induced bond breaking and the implanted C atoms as an additional C source the graphitization temperature was reduced by up to 200 °C

Effect of CuO addition on the sintering temperature and microwave dielectric properties of CaSiO3–Al2O3 ceramics

Directory of Open Access Journals (Sweden)

Denghao Li

2014-06-01

Full Text Available CuO-doped CaSiO3–1 wt% Al2O3 ceramics were synthesized via a traditional solid-state reaction method, and their sintering behavior, microstructure and microwave dielectric properties were investigated. The results showed that appropriate CuO addition could accelerate the sintering process and assist the densification of CaSiO3–1 wt% Al2O3 ceramics, which could effectively lower the densification temperature from 1250 °C to 1050 °C. However, the addition of CuO undermined the microwave dielectric properties. The optimal amount of CuO addition was found to be 0.8 wt%, and the derived CaSiO3–Al2O3 ceramic sintered at 1100 °C presented good microwave dielectric properties of εr=7.27, Q×f=16,850 GHz and τf=−39.53 ppm/°C, which is much better than those of pure CaSiO3 ceramic sintered at 1340 oC (Q×f=13,109 GHz. The chemical compatibility of the above ceramic with 30 Pd/70 Ag during the cofiring process has also been investigated, and the result showed that there was no chemical reaction between palladium–silver alloys and ceramics.

An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

Energy Technology Data Exchange (ETDEWEB)

Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

2017-06-26

For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

Matrix densification of SiC composites by sintering process

International Nuclear Information System (INIS)

Kim, Young-Wook; Jang, Doo-Hee; Eom, Jung-Hye; Chun, Yong-Seong

2007-02-01

The objectives of this research are to develop a process for dense SiC fiber-SiC composites with a porosity of 5% or less and to develop high-strength SiC fiber-SiC composites with a strength of 500 MPa or higher. To meet the above objectives, the following research topics were investigated ; new process development for the densification of SiC fiber-SiC composites, effect of processing parameters on densification of SiC fiber-SiC composites, effect of additive composition on matrix microstructure, effects of additive composition and content on densification of SiC fiber-SiC composites, mechanical properties of SiC fiber-SiC composites, effect of fiber coating on densification and strength of SiC fiber-SiC composites, development of new additive composition. There has been a great deal of progress in the development of technologies for the processing and densification of SiC fiber-SiC composites and in better understanding of additive-densification-mechanical property relations as results of this project. Based on the progress, dense SiC fiber-SiC composites (≥97%) and high strength SiC fiber-SiC composites (≥600 MPa) have been developed. Development of 2D SiC fiber-SiC composites with a relative density of ≥97% and a strength of ≥600 MPa can be counted as a notable achievement

The role of groundwater discharge fluxes on Si:P ratios in a major tributary to Lake Erie.

Science.gov (United States)

Maavara, Taylor; Slowinski, Stephanie; Rezanezhad, Fereidoun; Van Meter, Kimberly; Van Cappellen, Philippe

2018-05-01

Groundwater discharge can be a major source of nutrients to river systems. Although quantification of groundwater nitrate loading to streams is common, the dependence of surface water silicon (Si) and phosphorus (P) concentrations on groundwater sources has rarely been determined. Additionally, the ability of groundwater discharge to drive surface water Si:P ratios has not been contextualized relative to riverine inputs or in-stream transformations. In this study, we quantify the seasonal dynamics of Si and P cycles in the Grand River (GR) watershed, the largest Canadian watershed draining into Lake Erie, to test our hypothesis that regions of Si-rich groundwater discharge increase surface water Si:P ratios. Historically, both the GR and Lake Erie have been considered stoichiometrically P-limited, where the molar Si:P ratio is greater than the ~16:1 phytoplankton uptake ratio. However, recent trends suggest that eastern Lake Erie may be approaching Si-limitation. We sampled groundwater and surface water for dissolved and reactive particulate Si as well as total dissolved P for 12months within and downstream of a 50-km reach of high groundwater discharge. Our results indicate that groundwater Si:P ratios are lower than the corresponding surface water and that groundwater is a significant source of bioavailable P to surface water. Despite these observations, the watershed remains P-limited for the majority of the year, with localized periods of Si-limitation. We further find that groundwater Si:P ratios are a relatively minor driver of surface water Si:P, but that the magnitude of Si and P loads from groundwater represent a large proportion of the overall fluxes to Lake Erie. Copyright © 2017 Elsevier B.V. All rights reserved.

LOW-TEMPERATURE SINTERED (ZnMg2SiO4 MICROWAVE CERAMICS WITH TiO2 ADDITION AND CALCIUM BOROSILICATE GLASS

Directory of Open Access Journals (Sweden)

BO LI

2011-03-01

Full Text Available The low-temperature sintered (ZnMg2SiO–TiO2 microwave ceramic using CaO–B2O3–SiO2 (CBS as a sintering aid has been developed. Microwave properties of (Zn1-xMgx2SiO4 base materials via sol-gel method were highly dependent on the Mg-substituted content. Further, effects of CBS and TiO2 additives on the crystal phases, microstructures and microwave characteristics of (ZnMg2SiO4 (ZMS ceramics were investigated. The results indicated that CBS glass could lower the firing temperature of ZMS dielectrics effectively from 1170 to 950°C due to the liquid-phase effect, and significantly improve the sintering behavior and microwave properties of ZMS ceramics. Moreover, ZMS–TiO2 ceramics showed the biphasic structure and the abnormal grain growth was suppressed by the pinning effect of second phase TiO2. Proper amount of TiO2 could tune the large negative temperature coefficient of resonant frequency (tf of ZMS system to a near zero value. (Zn0.8Mg0.22SiO4 codoped with 10 wt.% TiO2 and 3 wt.% CBS sintered at 950°C exhibits the dense microstructure and excellent microwave properties: εr = 9.5, Q·f = 16 600 GHz and tf = −9.6 ppm/°C.

Improvement of photoluminescence properties and thermal stability of Y{sub 2.9}Ce{sub 0.1}Al{sub 5−x}Si{sub x}O{sub 12} phosphors with Si{sub 3}N{sub 4} addition

Energy Technology Data Exchange (ETDEWEB)

Zhang, Fangfang [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Song, Kaixin, E-mail: kxsong@hdu.edu.cn [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Jiang, Jun [Ningbo Institute of Materials Technologies and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wu, Song; Zheng, Peng [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Huang, Qingming [Instrument Analysis and Testing Center, Fuzhou University, Fuzhou 350002 (China); Xu, Junming; Qin, Huibin [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China)

2014-12-05

Highlights: • Y{sub 2.9}Ce{sub 0.1}Al{sub 5−x}Si{sub x}O{sub 12} phosphors were prepared by solid-state reaction in reduced air ambience. • Si{sup 4+} could be incorporated into the host lattice of Y{sub 3}Al{sub 5}O{sub 12} through partial occupation of the Al{sup 3+} sites. • Si{sub 3}N{sub 4} addition can improve photoluminescence efficiency and thermal stability of Y{sub 3}Al{sub 5}O{sub 12}:Ce. - Abstract: A series of Si{sub 3}N{sub 4} doping Y{sub 2.9}Ce{sub 0.1}Al{sub 5−x}Si{sub x}O{sub 12−3x/2}N{sub 4x/3} phosphors were prepared by solid-state reaction in 95%N{sub 2}–5%H{sub 2} reduced air ambience. The XRD characteristics plus Rietveld refinement results shows that the as-sintered powders are unique crystal phase with the same crystal structure of Y{sub 3}Al{sub 5}O{sub 12} (PDF No. 79-1891). The N element was not detected by the analysis of X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectrum (EDS). The photoluminescence spectra (PL and PLE) tests show that the exciting and emitting intensity of PLE and PL gradually increase due to the increase of Si{sub 3}N{sub 4} concentration. Meanwhile, the phosphorescence decay times are prolonged from 45 ns (x = 0) to 78 ns (x = 0.3), under the monitor of 530 nm wavelength. The thermoluminescence tests (TL) confirm the thermal stability of as-phosphors with Si{sub 3}N{sub 4} addition is much better than that of the pristine Y{sub 2.9}Ce{sub 0.1}Al{sub 5}O{sub 12} phosphors.

Characterization of SiC in DLC/a-Si films prepared by pulsed filtered cathodic arc using Raman spectroscopy and XPS

International Nuclear Information System (INIS)

Srisang, C.; Asanithi, P.; Siangchaew, K.; Pokaipisit, A.; Limsuwan, P.

2012-01-01

DLC/a-Si films were deposited on germanium substrates. a-Si film was initially deposited as a seed layer on the substrate using DC magnetron sputtering. DLC film was then deposited on the a-Si layer via a pulsed filtered cathodic arc (PFCA) system. In situ ellipsometry was used to monitor the thicknesses of the growth films, allowing a precise control over the a-Si and DLC thicknesses of 6 and 9 nm, respectively. It was found that carbon atoms implanting on a-Si layer act not only as a carbon source for DLC formation, but also as a source for SiC formation. The Raman peak positions at 796 cm -1 and 972 cm -1 corresponded to the LO and TO phonon modes of SiC, respectively, were observed. The results were also confirmed using TEM, XPS binding energy and XPS depth profile analysis.

Influence of Co addition on the magnetocaloric effect of FeCoSiAlGaPCB amorphous alloys

OpenAIRE

Franco García, Victorino; Borrego Moro, Josefa María; Conde Amiano, Alejandro

2006-01-01

The FeCoSiAlGaPCB alloys can be prepared as bulk amorphous materials, with outstanding mechanical properties and increased electrical resistivity. These features can be beneficial for their application as a magnetic refrigerant. The influence of Co addition on the magnetic entropy change of the alloy has been studied. This compositional modification displaces the temperature of the peak entropy change closer to room temperature, but reduces the refrigerant capacity of the material...

Crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses; Li2O-SiO2, Na2O-SiO2, Na2O-CaO-SiO2 kei glass no kessho sekishutsu kyodo

Energy Technology Data Exchange (ETDEWEB)

Tsutsumi, K.; Otake, J.; Nagasaka, T.; Hino, M. [Tohoku University, Sendai (Japan)

1998-06-01

It has been known that crystallization of mold powder is effective on the disturbance of heat transfer between mold and solidified shell in production of middle carbon steel slabs in continuous casting process. But it has not yet been made clear which composition of mold powder is the most suitable for crystallization. The crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses was observed by differential thermal analysis (DTA) and hot-thermocouple methods with DTA in the present work. As a result, addition of alkaline metal and alkaline earth metal oxides to SiO2 increased the critical cooling rate for glass formation in binary system of Li2O-SiO2 and Na2O-SiO2 and Li2O-SiO2 system crystallized easier than Na2O-SiO2 system. In ternary system of Na2O-CaO-SiO2, addition of Na2O hurried the critical cooling rate at CaO/SiO2=0.93 mass ratio, but the rate was almost constant in the composition range of more than 15 mass% Na2O. The slag of CaO/SiO2=0.93 made the rate faster than the slag of CaO/SiO2=0.47 at constant content of 10mass% Na2O. 17 refs., 10 figs., 3 tabs.

Sintering behaviour and phase relationships of Si[sub 3]N[sub 4] ceramics in the Si[sub 3]N[sub 4]-SiO[sub 2]-MgO-Y[sub 2]O[sub 3] system. Sinterverhalten und Phasenbeziehungen von Si[sub 3]N[sub 4]-Keramiken im System Si[sub 3]N[sub 4]-SiO[sub 2]-MgO-Y[sub 2]O[sub 3

Energy Technology Data Exchange (ETDEWEB)

Mahoney, F.M.

1992-10-12

The aim of this work is the investigation of the sintering or crystallisation behaviour of Si[sub 3]N[sub 4] ceramics depending on the additive composition in the Si[sub 3]N[sub 4]-SiO[sub 2]-MgO-Y[sub 2]O[sub 3] system. With regard to the complicated manufacturing process of sintered and heat-treated Si[sub 3]N[sub 4] ceramics, one should first determine which additive compositions make complete compression possible. The effect of the composition on the volume and the viscosity of the melting phase should be cleared up, where determining the Si[sub 3]N[sub 4] solubility relative to the additive composition is of special importance. The phase relationships between Si[sub 3]N[sub 4] and the possible crystalline secondary phases should be determined for the crystallisation behaviour. Due to the very fine distribution of only a 5-15% proportion of additive in conventional Si[sub 3]N[sub 4] samples, a characterisation of the secondary phases is difficult to carry out with X-ray or REM/EDX analysis. Therefore, experiments with oxy-nitridic model samples were carried out in this work, which have the same phase relationships as conventional Si[sub 3]N[sub 4] compositions, but with an appreciably higher proportion of additive. The possibility of transferring the results of the model samples were tested on examples of three Si[sub 3]N[sub 4] ceramics. (orig.)

Epitaxial growth of 3C-SiC by using C{sub 60} as a carbon source; Untersuchungen zum epitaktischen Wachstum von 3C-SiC bei Verwendung einer C{sub 60}-Kohlenstoffquelle

Energy Technology Data Exchange (ETDEWEB)

Schreiber, Sascha

2006-01-15

Within this work epitaxial 3C-SiC-films were grown on Si(001) substrates and on ion beam synthesized 3C-SiC(001) pseudo substrates. A rather new process was used which is based on the simultaneous deposition of C60 and Si. In order to set up the necessary experimental conditions an ultra-high vacuum chamber has been designed and built. A RHEED system was used to examine SiC film growth in-situ. Using the described technique 3C-SiC films were grown void-free on Si(001) substrates. Deposition rates of C60 and Si were chosen adequately to maintain a Si:C ratio of approximately one during the deposition process. It was shown that stoichiometric and epitaxial 3C-SiC growth with the characteristic relationship (001)[110]Si(001)[110]3C-SiC could be achieved. TEM investigations revealed that the grown 3C-SiC films consist of individual grains that extend from the Si substrate to the film surface. Two characteristic grain types could be identified. The correlation between structure and texture of void-free grown 3C-SiC films and film thickness was studied by X-ray diffraction (XRD). Pole figure measurements showed that thin films only contain first-order 3C-SiC twins. With higher film thickness also second-order twins are found which are located as twin lamellae in grain type 2. Improvement of polar texture with increasing film thickness couldn't be observed in the investigated range of up to 550 nm. On ion beam synthesized 3C-SiC pseudo substrates homoepitaxial 3C-SiC growth could be demonstrated for the first time by using a C{sub 60} carbon source. In respect to the crystalline quality of the grown films the surface quality of the used substrates was identified as a crucial factor. Furthermore a correlation between the ratio of deposition rates of C{sub 60} and Si and 3C-SiC film quality could be found. Under silicon-rich conditions, i.e. with a Si:C ratio of slightly greater one, homoepitaxial 3C-SiC layer-by-layer growth can be achieved. Films grown under these

Effects of Cu and Ag additions on age-hardening behavior during multi-step aging in Al--Mg--Si alloys

International Nuclear Information System (INIS)

Kim, JaeHwang; Daniel Marioara, Calin; Holmestad, Randi; Kobayashi, Equo; Sato, Tatsuo

2013-01-01

Low Cu and Ag additions (≤0.10 at%) were found to strongly affect the age-hardening behavior in Al--Mg--Si alloys with Mg+Si>1.5 at%. The hardness increased during aging at 170 °C and the formation of β ″ precipitates was kinetically accelerated. The activation energy of the formation of the β ″ phase was calculated to 127, 105, 108 and 99 KJmol −1 in the base, Cu-added, Ag-added and Cu--Ag-added alloys, respectively using the Kissinger method. The negative effect of two-step aging caused by the formation of Cluster (1) during natural aging was not overcome by the addition of microalloying elements. However, it was suppressed by the formation of Cluster (2) through a pre-aging at 100 °C. Quantitative analysis of the precipitate microstructure was performed using a transmission electron microscope equipped with a parallel electron energy loss spectrometer for the determination of specimen thickness. The formation of Cluster (2) was found to increase the number density of β ″ precipitates, whereas the formation of Cluster (1) decreased the number density and increased the needle length. The effects of low Cu and Ag additions in combination with multi-step aging are discussed based on microstructure observations and hardness and resistivity measurements.

The Effect of Si Morphology on Machinability of Al-Si Alloys

Directory of Open Access Journals (Sweden)

Muhammet Uludağ

2015-12-01

Full Text Available Many of the cast parts require some sort of machining like milling, drilling to be used as a finished product. In order to improve the wear properties of Al alloys, Si is added. The solubility of Si in Al is quite low and it has a crystallite type structure. It behaves as particulate metal matrix composite which makes it an attractive element. Thus, the wear and machinability properties of these type of alloys depend on the morphology of Si in the matrix. In this work, Sr was added to alter the morphology of Si in Al-7Si and Al-12Si. Cylindrical shaped samples were cast and machinability characteristics of Sr addition was studied. The relationship between microstructure and machinability was evaluated.

CVD of SiC and AlN using cyclic organometallic precursors

Science.gov (United States)

Interrante, L. V.; Larkin, D. J.; Amato, C.

1992-01-01

The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

Novel microstructural growth in the surface of Inconel 625 by the addition of SiC under electron beam melting

Energy Technology Data Exchange (ETDEWEB)

Ahmad, M., E-mail: maqomer@yahoo.com [Physics Division, Pakistan Institute of Nuclear Science and Technology (PINSTECH), P.O. Nilore, Islamabad (Pakistan); Ali, G.; Ahmed, Ejaz; Haq, M.A.; Akhter, J.I. [Physics Division, Pakistan Institute of Nuclear Science and Technology (PINSTECH), P.O. Nilore, Islamabad (Pakistan)

2011-06-15

Electron beam melting is being used to modify the microstructure of the surfaces of materials due to its ability to cause localized melting and supercooling of the melt. This article presents an experimental study on the surface modification of Ni-based superalloy (Inconel 625) reinforced with SiC ceramic particles under electron beam melting. Scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction techniques have been applied to characterize the resulted microstructure. The results revealed growth of novel structures like wire, rod, tubular, pyramid, bamboo and tweezers type morphologies in the modified surface. In addition to that fibrous like structure was also observed. Formation of thin carbon sheet has been found at the regions of decomposed SiC. Electron beam modified surface of Inconel 625 alloy has been hardened twice as compared to the as-received samples. Surface hardening effect may be attributed to both the formation of the novel structures as well as the introduction of Si and C atom in the lattice of Inconel 625 alloy.

Novel microstructural growth in the surface of Inconel 625 by the addition of SiC under electron beam melting

Science.gov (United States)

Ahmad, M.; Ali, G.; Ahmed, Ejaz; Haq, M. A.; Akhter, J. I.

2011-06-01

Electron beam melting is being used to modify the microstructure of the surfaces of materials due to its ability to cause localized melting and supercooling of the melt. This article presents an experimental study on the surface modification of Ni-based superalloy (Inconel 625) reinforced with SiC ceramic particles under electron beam melting. Scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction techniques have been applied to characterize the resulted microstructure. The results revealed growth of novel structures like wire, rod, tubular, pyramid, bamboo and tweezers type morphologies in the modified surface. In addition to that fibrous like structure was also observed. Formation of thin carbon sheet has been found at the regions of decomposed SiC. Electron beam modified surface of Inconel 625 alloy has been hardened twice as compared to the as-received samples. Surface hardening effect may be attributed to both the formation of the novel structures as well as the introduction of Si and C atom in the lattice of Inconel 625 alloy.

Novel microstructural growth in the surface of Inconel 625 by the addition of SiC under electron beam melting

International Nuclear Information System (INIS)

Ahmad, M.; Ali, G.; Ahmed, Ejaz; Haq, M.A.; Akhter, J.I.

2011-01-01

Electron beam melting is being used to modify the microstructure of the surfaces of materials due to its ability to cause localized melting and supercooling of the melt. This article presents an experimental study on the surface modification of Ni-based superalloy (Inconel 625) reinforced with SiC ceramic particles under electron beam melting. Scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction techniques have been applied to characterize the resulted microstructure. The results revealed growth of novel structures like wire, rod, tubular, pyramid, bamboo and tweezers type morphologies in the modified surface. In addition to that fibrous like structure was also observed. Formation of thin carbon sheet has been found at the regions of decomposed SiC. Electron beam modified surface of Inconel 625 alloy has been hardened twice as compared to the as-received samples. Surface hardening effect may be attributed to both the formation of the novel structures as well as the introduction of Si and C atom in the lattice of Inconel 625 alloy.

Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

International Nuclear Information System (INIS)

Mukherjee, Moumita; Tripathy, P. R.; Pati, S. P.

2015-01-01

A full-scale, self-consistent, non-linear, large-signal model of double-drift hetero-structure IMPATT diode with general doping profile is derived. This newly developed model, for the first time, has been used to analyze the large-signal characteristics of hexagonal SiC-based double-drift IMPATT diode. Considering the fabrication feasibility, the authors have studied the large-signal characteristics of Si/SiC-based hetero-structure devices. Under small-voltage modulation (∼ 2%, i.e. small-signal conditions) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode's negative conductance (5 × 10 6 S/m 2 ), susceptance (10.4 × 10 7 S/m 2 ), average breakdown voltage (207.6 V), and power generating efficiency (15%, RF power: 25.0 W at 94 GHz) are obtained as a function of oscillation amplitude (50% of DC breakdown voltage) for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal (> 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all types of IMPATT structures with distributed and narrow avalanche zones. The simulator is made more realistic by incorporating the space-charge effects, realistic field and temperature dependent material parameters in Si and SiC. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form. This study will act as a guide for researchers to fabricate a high-power Si/SiC-based IMPATT for possible application in high-power MM-wave communication systems. (paper)

Self-aligned indium–gallium–zinc oxide thin-film transistors with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers

Energy Technology Data Exchange (ETDEWEB)

Chen, Rongsheng, E-mail: rschen@ust.hk; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

2014-08-01

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm{sup 2}/Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10{sup 6}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress.

Effect of Mn and AlTiB Addition and Heattreatment on the Microstructures and Mechanical Properties of Al-Si-Fe-Cu-Zr Alloy.

Science.gov (United States)

Yoo, Hyo-Sang; Kim, Yong-Ho; Lee, Seong-Hee; Son, Hyeon-Taek

2018-09-01

The microstructure and mechanical properties of as-extruded Al-0.1 wt%Si-0.2 wt%Fe- 0.4 wt%Cu-0.04 wt%Zr-xMn-xAlTiB (x = 1.0 wt%) alloys under various annealing processes were investigated and compared. After the as-cast billets were kept at 400 °C for 1 hr, hot extrusion was carried out with a reduction ratio of 38:1. In the case of the as-extruded Al-Si-Fe-Cu-Zr alloy at annealed at 620 °C, large equiaxed grain was observed. When the Mn content is 1.0 wt%, the phase exhibits a skeleton morphology, the phase formation in which Mn participated. Also, the volume fraction of the intermetallic compounds increased with Mn and AlTiB addition. For the Al-0.1Si-0.2Fe-0.4Cu-0.04Zr alloy with Mn and AlTiB addition from 1.0 wt%, the ultimate tensile strength increased from 100.47 to 119.41 to 110.49 MPa. The tensile strength of the as-extruded alloys improved with the addition of Mn and AlTiB due to the formation of Mn and AlTiB-containing intermetallic compounds.

Porous SiC/SiC composites development for industrial application

International Nuclear Information System (INIS)

Maeta, S.; Hinoki, T.

2014-01-01

Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

Influence wt.% of SiC and borax on the mechanical properties of AlSi-Mg-TiB-SiC composite by the method of semi solid stir casting

Science.gov (United States)

Bhiftime, E. I.; Guterres, Natalino F. D. S.; Haryono, M. B.; Sulardjaka, Nugroho, Sri

2017-04-01

SiC particle reinforced metal matrix composites (MMCs) with solid semi stir casting method is becoming popular in recent application (automotive, aerospace). Stirring the semi solid condition is proven to enhance the bond between matrix and reinforcement. The purpose of this study is to investigate the effect of the SiC wt.% and the addition of borax on mechanical properties of composite AlSi-Mg-TiB-SiC and AlSi-Mg-TiB-SiC/Borax. Specimens was tested focusing on the density, porosity, tensile test, impact test microstructure and SEM. AlSi is used as a matrix reinforced by SiC with percentage variations (10, 15, 20 wt.%). Giving wt.% Borax which is the ratio of 1: 4 between wt.% SiC. The addition of 1.5% of TiB gives grain refinement. The use of semi-solid stir casting method is able to increase the absorption of SiC particles into a matrix AlSi evenly. The improved composite presented here can be used as a guideline to make a new composite.

INCLUSIVE SYSTEMATICS FOR SI-28+SI-28 REACTIONS BETWEEN 20 AND 35 MEV PER NUCLEON

NARCIS (Netherlands)

BOX, PF; GRIFFIOEN, KA; DECOWSKI, P; BOOTSMA, T; GIERLIK, E; VANNIEUWENHUIZEN, GJ; TWENHOFEL, C; KAMERMANS, R; WILSCHUT, HW; GIORNI, A; MORAND, C; DEMEYER, A; GUINET, D

Inclusive velocity spectra of heavy ions produced in the Si-28 + Si-28 reaction at 22, 26, 30, and 35 MeV per nucleon were measured and decomposed into peripheral and central components using an analytical moving-source parametrization. The persistence of incomplete fusion followed by evaporation

Effect of Si on the reversibility of stress-induced martensite in Fe-Mn-Si shape memory alloys

Energy Technology Data Exchange (ETDEWEB)

Stanford, N. [Centre for Material and Fibre Innovation, Deakin University, Geelong, Victoria 3217 (Australia); Dunne, D.P., E-mail: druce_dunne@uow.edu.au [Faculty of Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia)

2010-12-15

Fe-Mn-Si is a well-characterized ternary shape memory alloy. Research on this alloy has consistently shown that the addition of 5-6 wt.% Si is desirable to enhance the reversibility of stress-induced martensite vis-a-vis shape memory. This paper examines the effect of Si on the morphology and the crystallography of the martensite in the Fe-Mn-Si system. It is concluded that the addition of Si increases the c/a ratio of the martensite, reduces the transformation volume change and decreases the atomic spacing difference between the parallel close-packed directions in the austenite-martensite interface (habit) plane. It is proposed that, in addition to austenite strengthening, Si enhances reversibility by reducing the volume change and the interfacial atomic mismatch between the martensite and the austenite. Although shape memory is improved, transformation reversibility remains limited by the necessary misfit dislocations that accommodate the atomic spacing differences in the interface.

Effect of Si on the reversibility of stress-induced martensite in Fe-Mn-Si shape memory alloys

International Nuclear Information System (INIS)

Stanford, N.; Dunne, D.P.

2010-01-01

Fe-Mn-Si is a well-characterized ternary shape memory alloy. Research on this alloy has consistently shown that the addition of 5-6 wt.% Si is desirable to enhance the reversibility of stress-induced martensite vis-a-vis shape memory. This paper examines the effect of Si on the morphology and the crystallography of the martensite in the Fe-Mn-Si system. It is concluded that the addition of Si increases the c/a ratio of the martensite, reduces the transformation volume change and decreases the atomic spacing difference between the parallel close-packed directions in the austenite-martensite interface (habit) plane. It is proposed that, in addition to austenite strengthening, Si enhances reversibility by reducing the volume change and the interfacial atomic mismatch between the martensite and the austenite. Although shape memory is improved, transformation reversibility remains limited by the necessary misfit dislocations that accommodate the atomic spacing differences in the interface.

Thermal stability of (AlSi)x(ZrVTi) intermetallic phases in the Al–Si–Cu–Mg cast alloy with additions of Ti, V, and Zr

International Nuclear Information System (INIS)

Shaha, S.K.; Czerwinski, F.; Kasprzak, W.; Friedman, J.; Chen, D.L.

2014-01-01

Highlights: • Al–Si–Cu–Mg alloy was modified by introducing Zr, V, and Ti. • The chemistry of the phases was identified using SEM/EDX. • The crystal lattice parameters of the phases were characterized using EBSD. • To investigate the phase stability, XRD was performed up to 600 °C. • Thermal analysis was done to find out the possible phase transformation reactions. - Abstract: The Al–Si–Cu–Mg cast alloy was modified with additions of Ti–V–Zr to improve the thermal stability of intermetallics at increased temperatures. A combination of electron microscopy, electron backscatter diffraction, and high temperature X-ray diffraction was explored to identify phases and temperatures of their thermal stability. The micro-additions of transition metals led to formation of several (AlSi) x (TiVZr) phases with D0 22 /D0 23 tetragonal crystal structure and different lattice parameters. While Cu and Mg rich phases along with the eutectic Si dissolved at temperatures from 300 to 500 °C, the (AlSi) x (TiVZr) phases were stable up to 696–705 °C which is the beneficial to enhance the high temperature properties. Findings of this study are useful for selecting temperatures during melting and heat treatment of Al–Si alloys with additions of transition metals

Thermal SiO as a probe of high velocity motions in regions of star formation

International Nuclear Information System (INIS)

Downes, D.; Genzel, R.; Hjalmarson, A.; Nyman, L.A.; Roennaeng, B.

1982-01-01

New observations of the v = 0, J = = 2→1 line of SiO at 86.8 GHz show a close association of the thermal SiO emission and infrared and maser sources in regions of star formation. In addition to SiO emission with low velocity dispersion (Δν -1 ), we report the first detection of high velocity (''plateau'') emission toward W49 and W51. The low velocity SiO component may come from the core of the molecular cloud which contains the infrared and maser sources. The ''plateau'' may indicate mass clusters. In Orion KL, the positional centroid of the high velocity SiO emission (Vertical BarΔνVertical Bar> or =20 km s -1 ) is near that of the component we identify as the ''18 km s -1 flow''. However, the centriods of the blue- and redshifted wings are displaced from each other by a few arcseconds, to the NW and NE of the position of the 18 km s -1 component. The mass-loss rates of the high velocity flow and the 18 km s -1 flow are similar

Combined addition of nano diamond and nano SiO2, an effective method to improve the in-field critical current density of MgB2 superconductor

International Nuclear Information System (INIS)

Rahul, S.; Varghese, Neson; Vinod, K.; Devadas, K.M.; Thomas, Syju; Anees, P.; Chattopadhyay, M.K.; Roy, S.B.; Syamaprasad, U.

2011-01-01

Highlights: → Both nano diamond and nano SiO 2 caused significant modifications in the structural properties of pure MgB 2 sample. → Reduction in T C for the best codoped sample was approximately 2 K. → The best codoped sample yielded a J C , an order of magnitude more than the undoped one at 5 K and 8 T. → The enhanced flux pinning capability provided by the additives is responsible for the improved in-field J C . -- Abstract: MgB 2 bulk samples added with nano SiO 2 and/or nano diamond were prepared by powder-in-sealed-tube (PIST) method and the effects of addition on structural and superconducting properties were studied. X-ray diffraction (XRD) analysis revealed that the addition caused systematic reduction in 'a' lattice parameter due to the substitution of C atoms at B sites and the strain caused by reacted intragrain nano particles of Mg 2 Si as evinced by transmission electron microscope image. Scanning electron microscopy images showed distinct microstructural variations with SiO 2 /diamond addition. It was evident from DC magnetization measurements that the in-field critical current density [J C (H)] of doped samples did not fall drastically like the undoped sample. Among the doped samples the J C (H) of co-doped samples were significantly higher and the best co-doped sample yielded a J C , an order of magnitude more than the undoped one at 5 K and 8 T.

Moessbauer and channeling experiments on TeSi and SmSi

International Nuclear Information System (INIS)

Kemerink, G.J.; Boerma, D.O.; Waard, H. de; Wit, J.C. de; Drentje, S.A.

1980-01-01

Considerable effort is made to obtain an insight in the structural and electronic properties of ion implanted elemental semiconductors. This research is strongly stimulated by the many applications of semi-conductor devices. We report here on Moessbauer studies of 129 TeSi and 153 SmSi, using the 27.8 keV transition in 129 I and the 103.2 keV transition in 153 Eu, respectively, and on channeling experiments on 128 TeSi and 152 SmSi with a 2 MeV α-beam from the Groningen Van de Graaff generator. In the Moessbauer experiments we used Cu 129 I and EuF 3 .1/2H 2 O as absorber materials. Source and absorber were held at 4.2 K. The implantations were generally done at room temperature with an implantation energy of 100-115 keV. For the Moessbauer and channeling measurements we applied similar Si single crystals and the same implantation and annealing conditions. Crystals with low doses could only be investigated with the Moessbauer effect

Influence of the Si content on the microstructure and mechanical properties of Ti-Ni-Cu-Si-Sn nanocomposite alloys

Energy Technology Data Exchange (ETDEWEB)

Fornell, J., E-mail: Jordinafornell@gmail.com [Departament de Fisica, Universitat Autonoma de Barcelona, 08193 Bellaterra (Spain); Van Steenberge, N. [OCAS N.V., Pres. J.F. Kennedylaan 3, BE-9060 Zelzate (Belgium); Surinach, S.; Baro, M.D. [Departament de Fisica, Universitat Autonoma de Barcelona, 08193 Bellaterra (Spain); Sort, J. [Departament de Fisica, Universitat Autonoma de Barcelona, 08193 Bellaterra (Spain); Institucio Catalana de Recerca i Estudis Avancats (Spain)

2012-09-25

Highlights: Black-Right-Pointing-Pointer We study the effects of Si addition of Ti-Ni-Cu-Si-Sn alloy. Black-Right-Pointing-Pointer The microstructure evolution is correlated with the obtained mechanical and elastic properties. Black-Right-Pointing-Pointer Higher Young's modulus and larger hardness values are obtained in samples with higher Si contents. - Abstract: (Ti{sub 48}Ni{sub 32}Cu{sub 8}Si{sub 8}Sn{sub 4}){sub 100-x}Si{sub x} (x = 0, 2, 4 and 6) alloys were prepared by levitation melting mixtures of the high purity elements in an Ar atmosphere. Rods of 3 mm in diameter were obtained from the melt by copper mould casting. The effects of Si addition on the microstructure, elastic and mechanical properties of the Ti{sub 48}Ni{sub 32}Cu{sub 8}Si{sub 8}Sn{sub 4} alloy were investigated by scanning electron microscopy, X-ray diffraction, acoustic measurements and nanoindentation. The main phases composing the Ti{sub 48}Ni{sub 32}Cu{sub 8}Si{sub 8}Sn{sub 4} alloy are B2 NiTi, B19 Prime NiTi and tetragonal Ti{sub 2}Ni. Additional phases, like Ti{sub 5}Si{sub 3} or Ni{sub 2}Ti{sub 2}Si, become clearly visible in samples with higher Si contents. The microstructure evolution is correlated with the obtained mechanical and elastic properties. These alloys exhibit very high hardness values, which increase with the Si content, from 9 GPa (for x = 0) to around 10.5 GPa (for x = 6). The Young's modulus of Ti{sub 48}Ni{sub 32}Cu{sub 8}Si{sub 8}Sn{sub 4} (around 115 GPa) also increases significantly with Si addition, up to 160 GPa for x = 6.

Hybrid III-V-on-Si Vertical Cavity laser for Optical Interconnects

DEFF Research Database (Denmark)

Park, Gyeong Cheol; Semenova, Elizaveta; Chung, Il-Sug

2013-01-01

Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers.......Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers....

Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

International Nuclear Information System (INIS)

Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

2013-01-01

We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources

Directory of Open Access Journals (Sweden)

Wanshun Zhao

2013-04-01

Full Text Available We report a new method for growing hexagonal columnar nanograin structured silicon carbide (SiC thin films on silicon substrates by using graphene–graphitic carbon nanoflakes (GGNs templates from solid carbon sources. The growth was carried out in a conventional low pressure chemical vapor deposition system (LPCVD. The GGNs are small plates with lateral sizes of around 100 nm and overlap each other, and are made up of nanosized multilayer graphene and graphitic carbon matrix (GCM. Long and straight SiC nanograins with hexagonal shapes, and with lateral sizes of around 200–400 nm are synthesized on the GGNs, which form compact SiC thin films.

Alpha-particle irradiation induced defects in SiO2 films of Si-SiO2 structures

International Nuclear Information System (INIS)

Koman, B.P.; Gal'chynskyy, O.V.; Kovalyuk, R.O.; Shkol'nyy, A.K.

1996-01-01

The aim of the work was to investigate alpha-particle irradiation induced defects in Si-SiO 2 structures by means of the thermostimulated discharge currents (TSDC) analysis. The object of investigation were (p-Si)-SiO 2 structures formed by a combined oxidation of the industrial p-Si wafers in dry and wet oxygen at temperature of 1150 C. The TSD currents were investigated in the temperature range between 90 and 500 K under linear heating rate. Pu 238 isotopes were the source of alpha-particles with an energy of 4-5 MeV and a density of 5.10 7 s -1 cm -2 . The TSD current curves show two peculiar maxima at about 370 and 480 K. Alpha-particle irradiation doesn't affect the general shape of the TSDC curves but leads to a shift of the maximum at 370 K and reduces the total electret charge which is accumulated in the Si-SiO 2 structures during polarization. The energy distribution function of the defects which are involved in SiO 2 polarization has been calculated. It showes that defects with activation energies of about 0.8 and 1.0 eV take part in forming the electret state, and these activation energies have certain energy distributions. It has been found that the TSDC maximum at 370 K has space charge nature and is caused by migration of hydrogen ions. In irradiated samples hydrogen and natrium ions localize on deeper trapping centres induced by alpha-particle irradiation. (orig.)

Naturally occurring 32 Si and low-background silicon dark matter detectors

Energy Technology Data Exchange (ETDEWEB)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope Si-32 represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of Si-32 and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the Si-32 concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of Si-32-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in Si-32. To quantitatively evaluate the Si-32 content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon-based detectors with low levels of Si-32, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Naturally occurring 32Si and low-background silicon dark matter detectors

Science.gov (United States)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon "ore" and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

MOCVD of hexagonal boron nitride thin films on Si(100) using new single source precursors

CERN Document Server

Boo, J H; Yu, K S; Kim, Y S; Kim, Y S; Park, J T

1999-01-01

We have been carried out the growth of hexagonal boron nitride (h-BN) thin films on Si(100) substrates by low pressure metal-organic chemical vapor deposition (LPMOCVD) method using triethylborane tert-butylamine complex (TEBTBA), Et sub 3 BNH sub 2 ( sup t Bu), and triethylborane isopropylamine complex (TEBIPA), Et sub 3 BNH sub 2 ( sup t Pr) as a new single molecular precursors in the temperature range of 850 approx 1000 .deg. C. polycrystalline, crack-free h-BN film was successfully grown on Si(100) substrate at 850 .deg. C using TEBTBA. This growth temperature is very lower than those in previous reports. Carbon-rich polycrystalline BN was also obtained at 900 .deg. C from TEBIPA. With increasing substrate temperature to 1000 .deg. C, however, BC sub 4 N-like species are strongly formed along with h-BN and the BN films obtained from both TEBTBA and TEBIPA but almost polycrystalline. To our best knowledge, this is the first report of the growth of h-BN films formed with the new single source precursors of ...

UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

Directory of Open Access Journals (Sweden)

Schutz-Kuchly T.

2014-01-01

Full Text Available Experimental work on laser induced ablation of thin Al2O3(20 nm/SiN:H (70 nm and a-Si:H (20 nm/SiN:H (70 nm stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are efficiently removed using a femtosecond infra-red laser (1030 nm wavelength, 300 fs pulse duration but the underlying silicon surface is highly damaged in a ripple-like pattern. This collateral effect is almost completely avoided using a nanosecond ultra-violet laser (248 nm wavelength, 50 ns pulse duration, however a-Si:H flakes and Al2O3 lace remain after ablation process.

Effects of Ti addition and heat treatments on mechanical and electrical properties of Cu-Ni-Si alloys

Science.gov (United States)

Kim, Hyung Giun; Lee, Taeg Woo; Kim, Sang Min; Han, Seung Zeon; Euh, Kwangjun; Kim, Won Yong; Lim, Sung Hwan

2013-01-01

The mechanical and electrical properties of Cu-5.98Ni-1.43Si and Cu-5.98Ni-1.29Si-0.24Ti alloys under heat treatment at 400 and 500 °C after hot- and cold-rolling were investigated, and a microstructural analysis using transmission electron microscopy was performed. Cu-5.98Ni-1.29Si-0.24Ti alloy displayed the combined Vickers hardness/electrical conductivity value of 315.9 Hv/57.1%IACS. This was attributed to a decrease of the solution solubility of Ni and Si in the Cu matrix by the formation of smaller and denser δ-Ni2Si precipitates. Meanwhile, the alloyed Ti was detected in the coarse Ni-Si-Ti phase particles, along with other large Ni-Si phase particles, in Cu-5.98Ni-1.29Si-0.24Ti.

Effect of Si and Mn additions on ferrite and austenite phase fractions in 25Cr-7Ni-1.5Mo-3W base super duplex stainless steels

International Nuclear Information System (INIS)

Jeong, S.W.; Lee, Z.-H.; Lee, H.M.

2000-01-01

The effect of heat treatment and Si and Mn additions on the ferrite and austenite phase fractions of the super duplex stainless steel (SDSS), Fe-25Cr-7Ni-1.5Mo-3W-Si-Mn-0.25N (numbers are all in wt.% unless specified otherwise), was investigated. The thermodynamic calculations of phase equilibria and phase fractions were performed using the Thermo-Calc program. Based on the calculated results, specific compositions of Si and Mn were selected and alloys with these compositions were analysed by Feritscope, X-ray diffractometry and scanning electron microscopy. The calculated phase fractions and experimentally analysed ones were compared and there was a good agreement between calculations and measurements. The optimum heat treatment condition for Fe-25Cr-7Ni-1.5Mo-3W-0.5Si-0.5Mn-0.25N is to hold at 1050 to 1100 C for 2 h in considering the ferrite to austenite ratio of 50:50 and to avoid second phase precipitation such as the σ phase. It was suggested that an excessive addition of more than 0.8Si and 1.0Mn may induce the σ phase precipitation. (orig.)

Transarterial chemoembolization of hepatocellular carcinoma in a rat model: the effect of additional injection of survivin siRNA to the treatment protocol

International Nuclear Information System (INIS)

Vogl, Thomas J.; Oppermann, Elsie; Qian, Jun; Imlau, Ulli; Tran, Andreas; Hamidavi, Yousef; Korkusuz, Huedayi; Bechstein, Wolf Otto; Nour-Eldin, Nour-Eldin Abdel-Rehim; Gruber-Rouh, Tatjana; Hammerstingl, Renate; Naguib, Nagy Naguib Naeem

2016-01-01

Transarterial chemoembolization is one of the most widely accepted interventional treatment options for treatment of hepatocellular carcinoma. Still there is a lack of a standard protocol regarding the injected chemotherapeutics. Survivin is an inhibitor of Apoptosis protein that functions to inhibit apoptosis, promote proliferation, and enhance invasion. Survivin is selectively up-regulated in many human tumors. Small interfering RNA (siRNA) can trigger an RNA interference response in mammalian cells and induce strong inhibition of specific gene expression including Survivin. The aim of the study is to assess the effectiveness of the additional injection of Survivin siRNA to the routine protocol of Transarterial Chemoembolization (TACE) for the treatment of hepatocellular carcinoma in a rat model. The study was performed on 20 male ACI rats. On day 0 a solid Morris Hepatoma 3924A was subcapsullary implanted in the liver. On day 12 MRI measurement of the initial tumor volume (V1) was performed. TACE was performed on day 13. The rats were divided into 2 groups; Group (A, n = 10) in which 0.1 mg mitomycin, 0.1 ml lipiodol and 5.0 mg degradable starch microspheres were injected in addition 2.5 nmol survivin siRNA were injected. The same agents were injected in Group (B,=10) without Survivin siRNA. MRI was repeated on day 25 to assess the tumor volume (V2). The tumor growth ratio (V2/V1) was calculated. Western blot and immunohistochemical analysis were performed. For group A the mean tumor growth ratio (V2/V1) was 1.1313 +/− 0.1381, and was 3.1911 +/− 0.1393 in group B. A statistically significant difference between both groups was observed regarding the inhibition of tumor growth (P < 0.0001) where Group A showed more inhibition compared to Group B. Similarly immunohistochemical analysis showed significantly lower (p < 0.002) VEGF staining in group A compared to group B. Western Blot analysis showed a similar difference in VEGF expression (P < 0.0001). The

Nano-structure formation of Fe-Pt perpendicular magnetic recording media co-deposited with MgO, Al2O3 and SiO2 additives

International Nuclear Information System (INIS)

Safran, G.; Suzuki, T.; Ouchi, K.; Barna, P.B.; Radnoczi, G.

2006-01-01

Perpendicular magnetic recording media samples were prepared by sputter deposition on sapphire with a layer sequence of MgO seed-layer/Cr under-layer/FeSi soft magnetic under-layer/MgO intermediate layer/FePt-oxide recording layer. The effects of MgO, Al 2 O 3 and SiO 2 additives on the morphology and orientation of the FePt layer were investigated by transmission electron microscopy. The samples exhibited (001) orientation of the L1 FePt phase with the mutual orientations of sapphire substrate//MgO(100)[001]//Cr(100)[11-bar0]//FeSi(100)[11-bar0]//MgO(100) [001]//FePt(001)[100]. The morphology of the FePt films varied due to the co-deposited oxides: The FePt layers were continuous and segmented by stacking faults aligned at 54 o to the surface. Films with SiO 2 addition, beside the oriented columnar FePt grains, exhibited a fraction of misoriented crystallites due to random repeated nucleation. Al 2 O 3 addition resulted in a layered structure, i.e. an initial continuous epitaxial FePt layer covered by a secondary layer of FePt-Al 2 O 3 composite. Both components (FePt and MgO) of the MgO-added samples were grown epitaxially on the MgO intermediate layer, so that a nano-composite of intercalated (001) FePt and (001) MgO was formed. The revealed microstructures and formation mechanisms may facilitate the improvement of the structural and magnetic properties of the FePt-oxide composite perpendicular magnetic recording media

Additional evaluation of alpha induced neutron production nuclear data. 9Be, 27Al, 28,29,30Si

International Nuclear Information System (INIS)

Murata, Toru; Shibata, Keiichi

2005-01-01

Alpha particle induced neutron production cross sections, emitted neutron energy spectrum and angular distributions were evaluated for the target nucleus 9 Be, 27 Al and Si isotopes; 28 Si, 29 Si and 30 Si in the incident energy region below 15 MeV. (author)

Improvement of photoluminescence intensity of Ce-doped Y{sub 3}Al{sub 5}O{sub 12} phosphor by Si{sub 3}N{sub 4} addition

Energy Technology Data Exchange (ETDEWEB)

Shyu, Jiin-Jyh, E-mail: jjshyu@ttu.edu.tw; Yang, Chia-Wei

2017-06-01

Yttrium aluminum garnet (Y{sub 3}Al{sub 5}O{sub 12}, YAG) has been widely used as a host for luminescent ions. The present paper describes the effects of Si{sub 3}N{sub 4} addition on the formation and photoluminescence properties of the Ce-doped YAG yellow phosphors. Phosphor powders with the nominal compositions of Y{sub 2.95}Ce{sub 0.05}Al{sub 5-m}Si{sub m}O{sub 12-m}N{sub m} (m = 0–0.6) were prepared by calcining the mixed raw materials at 1500 °C in nitrogen atmosphere. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscope, and transmission electron microscopy equipped with an energy dispersive x-ray spectrometer were used to characterize the structure of the calcined powders. The photoluminescence properties were measured with fluorescence spectrophotometry. It was found that in the range of m = 0–0.27, single phase YAG solid solution (s.s.) in which the Y, Al, and O sites are partially occupied by Ce, Si, and N ions, respectively. The nitrogen ions do not distribute homogeneously over the YAG lattice. The tendency to bond with nitrogen ion for the cations is (Y, Ce) > Si > Al. With the increase in the Si{sub 3}N{sub 4} content, the increase in both the Ce{sup 3+}/(Ce{sup 3+} + Ce{sup 4+}) ratio and the Ce-N bonds improve the intensity of the photoluminescent emission. At m = 0.27, the emission intensity reaches a maximum which is about 2.5 and 1.6 times of that for the Si{sub 3}N{sub 4}-free composition (m = 0) calcined in air and nitrogen, respectively. When the Si{sub 3}N{sub 4} content (m) is higher than 0.27, the emission intensity decreases due to the existence of residual Si{sub 3}N{sub 4} phase. - Highlights: • Addition of Si{sub 3}N{sub 4} can increase the emission intensity of YAG:Ce up to 2.5 times. • Increase in the Ce{sup 3+}/Ce{sup 4+} ratio and the number of Ce-N bonds improve the emission. • The tendency to bond with nitrogen ion for cations in YAG:Ce is (Y, Ce) > Si > Al. • The incomplete dissolution

Various aspects of research of the SI engine with an additional expansion process

Directory of Open Access Journals (Sweden)

Noga Marcin

2017-01-01

Full Text Available The paper presents an analysis of the results of the both experimental results and theoretical works on the SI engine with additional expansion of exhaust gases, also known as five-stroke engine. The engine like this was constructed at Cracow University of Technology as a retrofitted in-line four cylinder engine in which outer cylinders (1st and 4th work as fired cylinders and inner cylinders (2nd and 3rd work as volume for the additional expansion. The aim of development of such an engine is to gain higher energy recovery ratio of the combusted fuel through the second expansion of exhaust in a separate cylinder. The operating parameters of the engine in various versions were analyzed: as naturally aspirated, supercharged using a turbocharger with a waste-gate valve and a turbocharger with variable nozzle turbine. Selected results of the indicating measurements of the engine with special emphasis on the indicated thermal efficiency were presented. The results pointed out the directions of further optimization of the engine. These results are all the more important, because according to the author’s knowledge, the research on the real object of this type are carried out in only one science center in the world besides Cracow University of Technology.

Electrical properties of Si/Si1-xGex/Si inverted modulation doped structures

International Nuclear Information System (INIS)

Sadeghzadeh, M.A.

1998-12-01

This thesis is a report of experimental investigations of growth strategy and electrical properties of Si/Si 1-x Ge x /Si inverted Modulation Doped (MD) structures grown by solid source Molecular Beam Epitaxy (MBE). If the grown Si layer is B-doped at some distance (as spacer) before or after the alloy layer, this remote doping induces the formation of a quasi Two Dimensional Hole Gas (2-DHG) near to the inverted (SiGe on Si) or normal (Si on SiGe) heterointerfaces of the Si/Si 1-x Ge x /Si quantum well, respectively. The latter arrangement is the well known 'normal' MD structure but the former one is the so-called 'inverted' MD structure which is of great interest for Field Effect Transistor (FET) applications. A reproducible growth strategy was employed by the use of a thick (400nm) Si cap for inverted MD structures with Ge composition in the range of 16-23%. Boron segregation and cap surface charges are significant in these inverted structures with small ( 20nm) spacer layers, respectively. It was demonstrated by secondary ion mass spectroscopy (SIMS) that boron segregation, which causes a reduction in the effective spacer dimension, can be suppressed by growth interruption after boron doping. The enhancement in hole sheet density with increasing Si cap layer thickness, is attributed to a reduction in the influence of positive surface charges in these structures. Top-gated devices were fabricated using these structures and the hole sheet density could be varied by applying a voltage to the metal-semiconductor gate, and the maximum Hall mobility of 5550 cm 2 V -1 s -1 with 4.2x10 11 cm -2 was measured (at 1.6K) in these structures. Comparison of measured Hall mobility (at 4.2K) as a function of hole sheet density in normal and inverted MD structures implies that both 2-DHG confined at normal and/or inverted structures are subjected to very similar interface charge, roughness, and alloy scattering potentials. Low temperatures magnetotransport measurements (down to

Thermal Stability of siRNA Modulates Aptamer- conjugated siRNA Inhibition

Directory of Open Access Journals (Sweden)

Alexey Berezhnoy

2012-01-01

Full Text Available Oligonucleotide aptamer-mediated in vivo cell targeting of small interfering RNAs (siRNAs is emerging as a useful approach to enhance the efficacy and reduce the adverse effects resulting from siRNA-mediated genetic interference. A current main impediment in aptamer-mediated siRNA targeting is that the activity of the siRNA is often compromised when conjugated to an aptamer, often requiring labor intensive and time consuming design and testing of multiple configurations to identify a conjugate in which the siRNA activity has not been significantly reduced. Here, we show that the thermal stability of the siRNA is an important parameter of siRNA activity in its conjugated form, and that siRNAs with lower melting temperature (Tm are not or are minimally affected when conjugated to the 3′ end of 2′F-pyrimidine-modified aptamers. In addition, the configuration of the aptamer-siRNA conjugate retains activity comparable with the free siRNA duplex when the passenger strand is co-transcribed with the aptamer and 3′ overhangs on the passenger strand are removed. The approach described in this paper significantly reduces the time and effort necessary to screening siRNA sequences that retain biological activity upon aptamer conjugation, facilitating the process of identifying candidate aptamer-siRNA conjugates suitable for in vivo testing.

Thermal stability of (AlSi){sub x}(ZrVTi) intermetallic phases in the Al–Si–Cu–Mg cast alloy with additions of Ti, V, and Zr

Energy Technology Data Exchange (ETDEWEB)

Shaha, S.K. [Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria Street, Toronto, Ontario M5B 2K3 (Canada); Czerwinski, F., E-mail: Frank.Czerwinski@nrcan.gc.ca [CanmetMATERIALS, Natural Resources Canada, 183 Longwood Road South, Hamilton, Ontario L8P 0A5 (Canada); Kasprzak, W. [CanmetMATERIALS, Natural Resources Canada, 183 Longwood Road South, Hamilton, Ontario L8P 0A5 (Canada); Friedman, J.; Chen, D.L. [Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria Street, Toronto, Ontario M5B 2K3 (Canada)

2014-11-10

Highlights: • Al–Si–Cu–Mg alloy was modified by introducing Zr, V, and Ti. • The chemistry of the phases was identified using SEM/EDX. • The crystal lattice parameters of the phases were characterized using EBSD. • To investigate the phase stability, XRD was performed up to 600 °C. • Thermal analysis was done to find out the possible phase transformation reactions. - Abstract: The Al–Si–Cu–Mg cast alloy was modified with additions of Ti–V–Zr to improve the thermal stability of intermetallics at increased temperatures. A combination of electron microscopy, electron backscatter diffraction, and high temperature X-ray diffraction was explored to identify phases and temperatures of their thermal stability. The micro-additions of transition metals led to formation of several (AlSi){sub x}(TiVZr) phases with D0{sub 22}/D0{sub 23} tetragonal crystal structure and different lattice parameters. While Cu and Mg rich phases along with the eutectic Si dissolved at temperatures from 300 to 500 °C, the (AlSi){sub x}(TiVZr) phases were stable up to 696–705 °C which is the beneficial to enhance the high temperature properties. Findings of this study are useful for selecting temperatures during melting and heat treatment of Al–Si alloys with additions of transition metals.

SI units in engineering and technology

CERN Document Server

Qasim, S H

2016-01-01

SI Units in Engineering and Technology focuses on the use of the International System of Units-Systeme International d'Unités (SI). The publication first elaborates on the SI, derivation of important engineering units, and derived SI units in science and engineering. Discussions focus on applied mechanics in mechanical engineering, electrical and magnetic units, stress and pressure, work and energy, power and force, and magnitude of SI units. The text then examines SI units conversion tables and engineering data in SI units. Tables include details on the sectional properties of metals in SI units, physical properties of important molded plastics, important physical constants expressed in SI units, and temperature, area, volume, and mass conversion. Tables that show the mathematical constants, standard values expressed in SI units, and Tex count conversion are also presented. The publication is a dependable source of data for researchers interested in the use of the International System of Units-Systeme Inter...

X-ray absorption spectroscopy study on SiC-side interface structure of SiO2–SiC formed by thermal oxidation in dry oxygen

Science.gov (United States)

Isomura, Noritake; Kosaka, Satoru; Kataoka, Keita; Watanabe, Yukihiko; Kimoto, Yasuji

2018-06-01

Extended X-ray absorption fine structure (EXAFS) spectroscopy is demonstrated to measure the fine atomic structure of SiO2–SiC interfaces. The SiC-side of the interface can be measured by fabricating thin SiO2 films and using SiC-selective EXAFS measurements. Fourier transforms of the oscillations of the EXAFS spectra correspond to radial-structure functions and reveal a new peak of the first nearest neighbor of Si for m-face SiC, which does not appear in measurements of the Si-face. This finding suggests that the m-face interface could include a structure with shorter Si–C distances. Numerical calculations provide additional support for this finding.

Growth of thin SiC films on Si single crystal wafers with a microwave excited plasma of methane gas

DEFF Research Database (Denmark)

Dhiman, Rajnish; Morgen, Per

2013-01-01

Wehave studied the growth and properties of SiC films on Siwafers, under ultrahigh vacuumbackground con- ditions, using a remote-, microwave excited,methane plasma as a source of active carbon and hydrogen,while the Si substrates were held at a temperature of near 700 °C. The reaction is diffusio......Wehave studied the growth and properties of SiC films on Siwafers, under ultrahigh vacuumbackground con- ditions, using a remote-, microwave excited,methane plasma as a source of active carbon and hydrogen,while the Si substrates were held at a temperature of near 700 °C. The reaction...... lowdensity of these, and are otherwise very uniform and poly- crystalline. They are characterized with scanning electron microscopy, atomic force microscopy, X-ray photo- electron spectroscopy, X-ray diffraction, and hardnessmeasurements....

Metal Additive Manufacturing: A Review of Mechanical Properties

Science.gov (United States)

Lewandowski, John J.; Seifi, Mohsen

2016-07-01

This article reviews published data on the mechanical properties of additively manufactured metallic materials. The additive manufacturing techniques utilized to generate samples covered in this review include powder bed fusion (e.g., EBM, SLM, DMLS) and directed energy deposition (e.g., LENS, EBF3). Although only a limited number of metallic alloy systems are currently available for additive manufacturing (e.g., Ti-6Al-4V, TiAl, stainless steel, Inconel 625/718, and Al-Si-10Mg), the bulk of the published mechanical properties information has been generated on Ti-6Al-4V. However, summary tables for published mechanical properties and/or key figures are included for each of the alloys listed above, grouped by the additive technique used to generate the data. Published values for mechanical properties obtained from hardness, tension/compression, fracture toughness, fatigue crack growth, and high cycle fatigue are included for as-built, heat-treated, and/or HIP conditions, when available. The effects of test orientation/build direction on properties, when available, are also provided, along with discussion of the potential source(s) (e.g., texture, microstructure changes, defects) of anisotropy in properties. Recommendations for additional work are also provided.

Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

International Nuclear Information System (INIS)

Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

2001-01-01

The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

Effect of P addition on glass forming ability and soft magnetic properties of melt-spun FeSiBCuC alloy ribbons

International Nuclear Information System (INIS)

Xu, J.; Yang, Y.Z.; Li, W.; Chen, X.C.; Xie, Z.W.

2016-01-01

The dependency of phosphorous content on the glass forming ability, thermal stability and soft magnetic properties of Fe 83.4 Si 2 B 14−x P x Cu 0.5 C 0.1 (x=0,1,2,3,4) alloys was investigated. The experimental results showed that the substitution of B by P increased the glass forming ability in this alloy system. The Fe 83.4 Si 2 B 10 P 4 Cu 0.5 C 0.1 alloy shows a fully amorphous character. Thermal stability of melt-spun ribbons increases and temperature interval between the first and second crystallization peaks enlarges with the increase of P content. And the saturation magnetic flux density (Bs) shows a slight increase with the increase of P content. The Fe 83.4 Si 2 B 11 P 3 Cu 0.5 C 0.1 nanocrystalline alloy exhibits a high Bs about 200.6 emu/g. The Bs of fully amorphous alloy Fe 83.4 Si 2 B 10 P 4 Cu 0.5 C 0.1 drops dramatically to 172.1 emu/g, which is lower than that of other nanocrystallines. Low material cost and excellent soft magnetic properties make the FeSiBPCuC alloys promise soft magnetic materials for industrial applications. - Highlights: • Partial substituting B by P helps to improve the glass forming ability of the alloy. • The addition of P content reduces the thermal stability and improves heat treatment temperature region for these alloys. • The Fe 83.4 Si 2 B 11 P 3 Cu 0.5 C 0.1 nanocrystalline alloy exhibits a high saturation magnetic density of 200.6 emu/g.

Dry sliding wear behaviour of Al-12Si-4Mg alloy with cerium addition

International Nuclear Information System (INIS)

Anasyida, A.S.; Daud, A.R.; Ghazali, M.J.

2010-01-01

The purpose of this work is to understand the effect of cerium addition on wear resistance behaviour of as-cast alloys. Al-12Si-4 Mg alloys with 1-5 wt% cerium addition were prepared using the casting technique. A sliding wear test was carried out under applied loads of 10 N, 30 N and 50 N at a fixed sliding speed of 1 m/s using a pin-on-disc configuration. The wear test was conducted in dry conditions at room temperature of ∼25 o C. Detailed analysis of the microstructure, worn surface, collected debris and microhardness was undertaken in order to investigate the differences between the as-cast alloys with different levels of cerium addition. The addition of 1-5 wt% cerium was found to lead to the precipitation of intermetallic phases (Al-Ce), resulting a needle-like structures. Increasing cerium content up to 2 wt% improved both wear resistance and microhardness of as-cast alloys. Addition of more than 2 wt% cerium, however, led to a decrease in microhardness, resulting in lower wear resistance of the alloys. Moderate wear was observed at all loads, with specific wear rates (K') ranging from 6.82 x 10 -5 with 2 wt% Ce at applied load of 50 N to 21.48 x 10 -5 mm 3 /N m without added Ce at an applied load of 10 N. Based on K' ranges, the as-cast alloys exhibited moderate wear regimes, and the mechanism of wear is a combination of abrasion and adhesion. Alloy containing 2 wt% Ce, with the highest hardness and lowest K' value, showed the greatest wear resistance.

The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

International Nuclear Information System (INIS)

Chang Jian-Guang; Wu Chun-Bo; Ji Xiao-Li; Ma Hao-Wen; Yan Feng; Shi Yi; Zhang Rong

2012-01-01

We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process. It is found that with the conventional Ni silicide method, the leakage current of a p + (SiGe)—n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film. In addition, the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film. As a result, the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology. (cross-disciplinary physics and related areas of science and technology)

Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

Science.gov (United States)

Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

2014-09-10

Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

Prediction of 4H–SiC betavoltaic microbattery characteristics based on practical Ni-63 sources

International Nuclear Information System (INIS)

Gui, Gui; Zhang, Kan; Blanchard, James P.; Ma, Zhenqiang

2016-01-01

We have investigated the performance of 4H–SiC betavoltaic microbatteries under exposure to the practical Ni-63 sources using the Monte Carlo method and Synopsys® Medici device simulator. A typical planar p–n junction betavoltaic device with the Ni-63 source of 20% purity on top is modeled in the simulation. The p–n junction structure includes a p+ layer, a p− layer, an n+ layer, and an n− layer. In order to obtain an accurate and valid predication, our simulations consider several practical factors, including isotope impurities, self-absorption, and full beta energy spectra. By simulating the effects of both the p–n junction configuration and the isotope source thickness on the battery output performance, we have achieved the optimal design of the device and maximum energy conversion efficiency. Our simulation results show that the energy conversion efficiency increases as the doping concentration and thickness of the p− layer increase, whereas it is independent of the total depth of the p–n junction. Furthermore, the energy conversion efficiency decreases as the thickness of the practical Ni-63 source increases, because of self-absorption in the isotope source. Therefore, we propose that a p–n junction betavoltaic cell with a thicker and heavily doped p− layer under exposure to a practical Ni-63 source with an appreciable thickness could produce the optimal energy conversion efficiency. - Highlights: • Different thicknesses of Ni-63 isotope sources with 20% purity were employed. • A self-absorption model was constructed for the beta energy spectra of Ni-63 sources. • The optimization strategies for betavoltaic microbatteries were outlined.

Experimental characterization and Monte Carlo simulation of Si(Li) detector efficiency by radioactive sources and PIXE

Energy Technology Data Exchange (ETDEWEB)

Mesradi, M. [Institut Pluridisciplinaire Hubert-Curien, UMR 7178 CNRS/IN2P3 et Universite Louis Pasteur, 23 rue du Loess, BP 28, F-67037 Strasbourg Cedex 2 (France); Elanique, A. [Departement de Physique, FS/BP 8106, Universite Ibn Zohr, Agadir, Maroc (Morocco); Nourreddine, A. [Institut Pluridisciplinaire Hubert-Curien, UMR 7178 CNRS/IN2P3 et Universite Louis Pasteur, 23 rue du Loess, BP 28, F-67037 Strasbourg Cedex 2 (France)], E-mail: abdelmjid.nourreddine@ires.in2p3.fr; Pape, A.; Raiser, D.; Sellam, A. [Institut Pluridisciplinaire Hubert-Curien, UMR 7178 CNRS/IN2P3 et Universite Louis Pasteur, 23 rue du Loess, BP 28, F-67037 Strasbourg Cedex 2 (France)

2008-06-15

This work relates to the study and characterization of the response function of an X-ray spectrometry system. The intrinsic efficiency of a Si(Li) detector has been simulated with the Monte Carlo codes MCNP and GEANT4 in the photon energy range of 2.6-59.5 keV. After finding it necessary to take a radiograph of the detector inside its cryostat to learn the correct dimensions, agreement within 10% between the simulations and experimental measurements with several point-like sources and PIXE results was obtained.

Les objets mobiliers des XIXe et XXe siècles : les sources

Directory of Open Access Journals (Sweden)

Laurence de Finance

2009-11-01

Full Text Available L’étude scientifique de tout objet ne peut se concevoir sans une recherche dans les sources documentaires. Qu’il s’agisse d’archives publiques ou privées, de legs faits à des musées ou autres institutions patrimoniales, la quête de renseignements est une nécessité pour suivre l’objet étudié depuis sa création jusqu’à son étude faite in Situ. De nos jours, de nombreuses ressources sont mises en ligne, notamment sur le site du ministère de la culture et de la communication ; accessibles à tous, elles rendent plus aisées la localisation des sources et la consultation de leur contenu. A titre d’exemple, afin de faciliter l’étude du mobilier religieux du XIXe siècle, dont la production est alors en pleine expansion, des pages illustrées de plusieurs catalogues de fabricants sont aujourd’hui consultables en ligne.The scientific study of any object requires research in documentary sources. Whether these are private or public archives, legacies left to museums or other heritage institutions, the search for information is a necessity for understanding the life of the object, from its creation to its study in situ. Today, many types of documentary source are available on line, in particular on the website of the French Ministry of Culture. These sources are available to all and easy to consult. The example presented here, concerning the study of religious furnishings of the 19th and 20th centuries, the production of which increased considerably during these centuries, are the pages taken from the catalogues of several manufacturers of these church furnishings, today accessible on line.

Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

International Nuclear Information System (INIS)

Hartmann, J.M.; Andrieu, F.; Lafond, D.; Ernst, T.; Bogumilowicz, Y.; Delaye, V.; Weber, O.; Rouchon, D.; Papon, A.M.; Cherkashin, N.

2008-01-01

We have first of all quantified the impact of pressure on Si and SiGe growth kinetics. Definite growth rate and Ge concentration increases with the pressure have been evidenced at low temperatures (650-750 deg. C). By contrast, the high temperature (950-1050 deg. C) Si growth rate either increases or decreases with pressure (gaseous precursor depending). We have then described the selective epitaxial growth process we use to form Si or Si 0.7 Ge 0.3 :B raised sources and drains on ultra-thin patterned Silicon-On-Insulator (SOI) substrates. We have afterwards presented the specifics of SiGe virtual substrates and of the tensile-strained Si layers grown on top (used as templates for the elaboration of tensily strained-SOI wafers). The tensile strain, which can be tailored from 1.3 up to 3 GPa, leads to an electron mobility gain by a factor of 2 in n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) built on top. High Ge content SiGe virtual substrates can also be used for the elaboration of compressively strained Ge channels, with impressive hole mobility gains (x9) compared to bulk Si. After that, we have described the main structural features of thick Ge layers grown directly on Si (that can be used as donor wafers for the elaboration of GeOI wafers or as the active medium of near infrared photo-detectors). Finally, we have shown how Si/SiGe multilayers can be used for the formation of high performance 3D devices such as multi-bridge channel or nano-beam gate-all-around FETs, the SiGe sacrificial layers being removed thanks to plasma dry etching, wet etching or in situ gaseous HCl etching

Preparation and infrared absorption properties of buried SiC layers

International Nuclear Information System (INIS)

Yan Hui; Chen Guanghua; Wong, S.P.; Kwok, R.W.M.

1997-01-01

Buried SiC layers were formed by using a metal vapor vacuum arc (MEVVA) ion source, with C + ions implanted into Si substrates under different doses. In the present study, the extracted voltage was 50 kV and the ion dose was varied from 3.0 x 10 17 to 1.6 x 10 18 cm -2 . According to infrared absorption measurements, it was fount that the structure of the buried SiC layers depended on the ion dose. Moreover, the results also demonstrated that the buried SiC layers including cubic crystalline SiC could be synthesized at an averaged substrate temperature of lower than 400 degree C with the MEVVA ion source

Structural, electronic, elastic, and thermodynamic properties of CaSi, Ca2Si, and CaSi2 phases from first-principles calculations

Science.gov (United States)

Li, X. D.; Li, K.; Wei, C. H.; Han, W. D.; Zhou, N. G.

2018-06-01

The structural, electronic, elastic, and thermodynamic properties of CaSi, Ca2Si, and CaSi2 are systematically investigated by using first-principles calculations method based on density functional theory (DFT). The calculated formation enthalpies and cohesive energies show that CaSi2 possesses the greatest structural stability and CaSi has the strongest alloying ability. The structural stability of the three phases is compared according to electronic structures. Further analysis on electronic structures indicates that the bonding of these phases exhibits the combinations of metallic, covalent, and ionic bonds. The elastic constants are calculated, and the bulk modulus, shear modulus, Young's modulus, Poisson's ratio, and anisotropy factor of polycrystalline materials are deduced. Additionally, the thermodynamic properties were theoretically predicted and discussed.

Progress report on R and D results from the advanced neutron source

International Nuclear Information System (INIS)

West, C.D.

1992-01-01

This presentation consists of six parts describing the the following: Oxide Formation; U 3 Si 2 Fuel Performance; Aluminum Irradiation Properties and Code Case; Fuel Plate Hydraulic Stability; Thermal-Hydraulic Test Loop designed to examine the CHF/flow instability limits and thermal hydraulic correlations of the ANS core; Cold Source Design Concept. HFIR results indicate good performance of U 3 Si 2 for ANS conditions. Additional data from HFIR tests, RERTR fuel, and simulation experiments are expected to improve understanding of basic behavior. Further research plans for the cold neutron source are: Test the circulation system, Test beryllium fabricability and properties, Develop and test modified pressure-balanced cryostat, design, if possible, of safe continued operation of the reactor even if cold source refrigeration is lost

Effect of strontium on liquid structure of Al-Si hypoeutectic alloys using high-energy X-ray diffraction

International Nuclear Information System (INIS)

Srirangam, P.; Kramer, M.J.; Shankar, S.

2011-01-01

High-energy X-ray diffraction experiments were performed using a synchrotron beam source to investigate the effect of strontium on the liquid atomic structure of Al-Si hypoeutectic alloys. The high-temperature liquid diffraction experiments were carried out on Al alloys with 3, 7, 10 and 12.5 (eutectic) wt.% Si, respectively, with 0 and 0.04 wt.% addition of Sr to each of the alloys. Further, the diffraction data for all the alloys were obtained at various melt temperatures (5-220 K) above the respective liquidus temperature. It was observed that the addition of 0.04 wt.% Sr results in significant change in the liquid structure parameters, such as structure factor, pair distribution function, radial distribution function, coordination number and packing density, at any given melt temperature of the alloy. Salient observations were that, for any specific alloy and temperature, addition of Sr significantly decreases coordination number and packing density. Further, with the addition of Sr in the liquid alloy, the atomic coordination number and packing density increases with decreasing temperature and decreasing Si content of the alloy. The results coupled with prior knowledge have enabled an in-depth understanding of the nucleation environment of the solidifying phases, specifically the role of Sr in delaying the clustering tendencies (nucleation) of the eutectic Si phase.

Comparative assessment of 3.3kV/400A SiC MOSFET and Si IGBT power modules

DEFF Research Database (Denmark)

Ionita, Claudiu; Nawaz, Muhammad; Ilves, Kalle

2017-01-01

In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si ...... the pulse duration was increased to 4 μs, where a short-circuit energy of 9.1 J was obtained. The cause of the failure is the thermal runaway leading to a drain-source short....

Development ceramic composites based on Al2O3, SiO2 and IG-017 additive

Science.gov (United States)

Kurovics, E.; Shmakova, A.; Kanev, B.; Gömze, L. A.

2017-02-01

Based on high purity alumina and quartz powders and IG-017 bio-original additives the authors have developed new ceramic composite materials for different industrial purposes. The main goal was to fine a material and morphological structures of high performance ceramic composites as frames for development complex materials for extreme consumptions in the future. For this the mixed powders of Al2O3 , SiO2 and IG-017 bio-original additive were uniaxially pressed at different compaction pressures into disc shapes and were sintered in electric kiln under air (1) and nitrogrn (2) atmosphere. The grain size distributions of the raw materials were determined by laser granulometry. There thermo-physical properties were also determined by derivatography. The prepared and sintered specimens were tested on geometrical sizes, microstructure and morphology by scanning electron microscopy, porosity and water absorption. In this work the authors present the results of their research and investigation.

Influence of grain size and additions of Al and Mn on the magnetic properties of non-oriented electrical steels with 3 wt. (% Si

Directory of Open Access Journals (Sweden)

Rodrigo Felix de Araujo Cardoso

2008-03-01

Full Text Available The influence of hot-band grain size and additions of aluminum and manganese on the magnetic properties of non-oriented grain (NOG low-carbon electrical steel with about 3 wt. (% Si were investigated using optical microscopy and X ray diffraction. The addition of manganese resulted in larger grains after final annealing. Coarse grains in the hot-band and addition of Mn led to a Goss orientation component after final annealing, which resulted in an increase in the magnetic permeability.

Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

Science.gov (United States)

Chagarov, Evgueni A.; Kavrik, Mahmut S.; Fang, Ziwei; Tsai, Wilman; Kummel, Andrew C.

2018-06-01

Comprehensive Density-Functional Theory (DFT) Molecular Dynamics (MD) simulations were performed to investigate interfaces between a-HfO2 and SiGe or Ge semiconductors with fully-stoichiometric a-SiO2 or sub-oxide SiO interlayers. The electronic structure of the selected stacks was calculated with a HSE06 hybrid functional. Simulations were performed before and after hydrogen passivation of residual interlayer defects. For the SiGe substrate with Ge termination prior to H passivation, the stacks with a-SiO suboxide interlayer (a-HfO2/a-SiO/SiGe) demonstrate superior electronic properties and wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/SiGe). After H passivation, most of the a-HfO2/a-SiO2/SiGe defects are passivated. To investigate effect of random placement of Si and Ge atoms additional simulations with a randomized SiGe slab were performed demonstrating improvement of electronic structure. For Ge substrates, before H passivation, the stacks with a SiO suboxide interlayer (a-HfO2/a-SiO/Ge) also demonstrate wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/Ge). However, even for a-HfO2/a-SiO/Ge, the Fermi level is shifted close to the conduction band edge (CBM) consistent with Fermi level pinning. Again, after H passivation, most of the a-HfO2/a-SiO2/Ge defects are passivated. The stacks with fully coordinated a-SiO2 interlayers have much stronger deformation and irregularity in the semiconductor (SiGe or Ge) upper layers leading to multiple under-coordinated atoms which create band-edge states and decrease the band-gap prior to H passivation.

Structure and soft magnetic properties of Fe-Si-B-P-Cu nanocrystalline alloys with minor Mn addition

Directory of Open Access Journals (Sweden)

Xingjie Jia

2018-05-01

Full Text Available Addition of minor Mn effectively improves the amorphous-forming ability and thermal stability of the Fe85Si2B8P4Cu1 alloy. With increasing the Mn content from 0 to 3 at.%, the critical thickness for amorphous formation and onset temperature of the primary crystallization increase from 14 μm and 659 K to 27 μm and 668 K, respectively. The fine nanocrystalline structure with α-Fe grains in size (D of < 20 nm was obtained for the annealed amorphous alloys, which show excellent soft magnetic properties. The alloying of Mn reduces the coercivity (Hc by decreasing the D value and widens the optimum annealing temperature range for obtaining low Hc, although the saturation magnetic flux density (Bs is decreased slightly. The Fe83Mn2Si2B8P4Cu1 nanocrystalline alloy possesses fine structure with a D of ∼17.5 nm, and exhibits a high Bs of ∼1.75 T and a low Hc of ∼5.9 A/m. The mechanism related to the alloying effects on the structure and magnetic properties was discussed in term of the crystallization activation energy.

Structure and soft magnetic properties of Fe-Si-B-P-Cu nanocrystalline alloys with minor Mn addition

Science.gov (United States)

Jia, Xingjie; Li, Yanhui; Wu, Licheng; Zhang, Wei

2018-05-01

Addition of minor Mn effectively improves the amorphous-forming ability and thermal stability of the Fe85Si2B8P4Cu1 alloy. With increasing the Mn content from 0 to 3 at.%, the critical thickness for amorphous formation and onset temperature of the primary crystallization increase from 14 μm and 659 K to 27 μm and 668 K, respectively. The fine nanocrystalline structure with α-Fe grains in size (D) of < 20 nm was obtained for the annealed amorphous alloys, which show excellent soft magnetic properties. The alloying of Mn reduces the coercivity (Hc) by decreasing the D value and widens the optimum annealing temperature range for obtaining low Hc, although the saturation magnetic flux density (Bs) is decreased slightly. The Fe83Mn2Si2B8P4Cu1 nanocrystalline alloy possesses fine structure with a D of ˜17.5 nm, and exhibits a high Bs of ˜1.75 T and a low Hc of ˜5.9 A/m. The mechanism related to the alloying effects on the structure and magnetic properties was discussed in term of the crystallization activation energy.

Precipitation kinetics of Al-1.12 Mg{sub 2}Si-0.35 Si and Al-1.07 Mg{sub 2}Si-0.33 Cu alloys

Energy Technology Data Exchange (ETDEWEB)

Gaber, A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Gaffar, M.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)]. E-mail: mgaafar@aucegypt.edu; Mostafa, M.S. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Zeid, E.F. Abo [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

2007-02-21

The kinetics of hardening precipitates of Al-1.12 wt.% Mg{sub 2}Si-0.35 wt.% Si (excess Si) and Al-1.07 wt.% Mg{sub 2}Si-0.33 wt.% Cu (balanced + Cu) alloys have been investigated by means of differential scanning calorimetry and hardness measurements. The excess Si enhances the precipitation kinetics and improves the strength of the material. On the other hand, however addition of Cu assist formation of the Q' phase which positively changed the alloy strength. The high binding energy between vacancies and solute atoms (Si and Mg) enhances the combination of Si, Mg and vacancies to form Si-Mg-vacancy clusters. These clusters act as nucleation sites for GP-zones. The coexistence of the {beta}'- and Q'-precipitates in the balanced + Cu alloy results in a higher peak age hardening compared to the alloy with Si in excess.

Effect of additional carbon source on naphthalene biodegradation by Pseudomonas putida G7

International Nuclear Information System (INIS)

Lee, Kangtaek; Park, Jin-Won; Ahn, Ik-Sung

2003-01-01

Addition of a carbon source as a nutrient into soil is believed to enhance in situ bioremediation by stimulating the growth of microorganisms that are indigenous to the subsurface and are capable of degrading contaminants. However, it may inhibit the biodegradation of organic contaminants and result in diauxic growth. The objective of this work is to study the effect of pyruvate as another carbon source on the biodegradation of polynuclear aromatic hydrocarbons (PAHs). In this study, naphthalene was used as a model PAH, ammonium sulfate as a nitrogen source, and oxygen as an electron acceptor. Pseudomonas putida G7 was used as a model naphthalene-degrading microorganism. From a chemostat culture, the growth kinetics of P. putida G7 on pyruvate was determined. At concentrations of naphthalene and pyruvate giving similar growth rates of P. putida G7, diauxic growth of P. putida G7 was not observed. It is suggested that pyruvate does not inhibit naphthalene biodegradation and can be used as an additional carbon source to stimulate the growth of P. putida G7 that can degrade polynuclear aromatic hydrocarbons

Deposition of multicomponent chromium carbide coatings using a non-conventional source of chromium and silicon with micro-additions of boron

Energy Technology Data Exchange (ETDEWEB)

Gonzalez Ruiz, Jesus Eduardo, E-mail: jesus.gonzalez@biomat.uh.cu [Biomaterials Center, University of Havana (Cuba); Rodriguez Cristo, Alejandro [Mechanical Plants Company, Road of the Sub-Plan, Farm La Cana, Santa Clara, Villa Clara (Cuba); Ramos, Adrian Paz [Department of Chemistry, Universite de Montreal, Quebec (Canada); Quintana Puchol, Rafael [Welding Research Center, Central University Marta Abreu of Las Villas, Villa Clara (Cuba)

2017-01-15

The chromium carbide coatings are widely used in the mechanical industry due to its corrosion resistance and mechanical properties. In this work, we evaluated a new source of chromium and silicon with micro-additions of boron on the deposition of multi-component coatings of chromium carbides in W108 steel. The coatings were obtained by the pack cementation method, using a simultaneous deposition at 1000 deg for 4 hours. The coatings were analyzed by X-ray diffraction, X-ray energy dispersive spectroscopy, optical microscopy, microhardness test method and pin-on-disc wear test. It was found that the coatings formed on W108 steel were mainly constituted by (Cr,Fe){sub 23}C{sub 6} , (Cr,Fe){sub 7} C{sub 3} , Cr{sub 5-x}Si{sub 3-x} C{sub x+z}, Cr{sub 3} B{sub 0,44}C{sub 1,4} and (or) Cr{sub 7} BC{sub 4} . The carbide layers showed thicknesses between 14 and 15 μm and maximum values of microhardness between 15.8 and 18.8 GPa. Also, the micro-additions of boron to the mixtures showed statistically significant influence on the thickness, microhardness and abrasive wear resistance of the carbide coatings. (author)

Sr-Al-Si co-segregated regions in eutectic Si phase of Sr-modified Al-10Si alloy.

Science.gov (United States)

Timpel, M; Wanderka, N; Schlesiger, R; Yamamoto, T; Isheim, D; Schmitz, G; Matsumura, S; Banhart, J

2013-09-01

The addition of 200 ppm strontium to an Al-10 wt% Si casting alloy changes the morphology of the eutectic silicon phase from coarse plate-like to fine fibrous networks. In order to clarify this modification mechanism the location of Sr within the eutectic Si phase has been investigated by a combination of high-resolution methods. Whereas three-dimensional atom probe tomography allows us to visualise the distribution of Sr on the atomic scale and to analyse its local enrichment, transmission electron microscopy yields information about the crystallographic nature of segregated regions. Segregations with two kinds of morphologies were found at the intersections of Si twin lamellae: Sr-Al-Si co-segregations of rod-like morphology and Al-rich regions of spherical morphology. Both are responsible for the formation of a high density of multiple twins and promote the anisotropic growth of the eutectic Si phase in specific crystallographic directions during solidification. The experimental findings are related to the previously postulated mechanism of "impurity induced twinning". Copyright © 2012 Elsevier B.V. All rights reserved.

Research Progress on Preparation for Biomass-based SiC Ceramic

Directory of Open Access Journals (Sweden)

CUI He-shuai

2017-08-01

Full Text Available Silicon carbide (SiC ceramics prepared by the conventional process has excellent properties and wide application prospects, but the increased cost of high-temperature preparation process restricts its further development. In contrast, the abundant porous structure of biomass makes itself to be ideal replacement of SiC ceramic prepared at low temperature. This paper reviewed the structure characteristics, preparation methods, pyrolysis mechanism and influence parameters of biomass-based SiC ceramic, and eventually explored the current problems and development trends of the pretreatment of carbon source and silicon source, the pyrolysis process and the application research on the preparation for biomass-based SiC ceramic.

Characterization of SiCf/SiC and CNT/SiC composite materials produced by liquid phase sintering

International Nuclear Information System (INIS)

Lee, J.K.; Lee, S.P.; Cho, K.S.; Byun, J.H.; Bae, D.S.

2011-01-01

This paper dealt with the microstructure and mechanical properties of SiC based composites reinforced with different reinforcing materials. The composites were fabricated using reinforcing materials of carbon nanotubes (CNT) and Tyranno Lox-M SiC chopped fibers. The volume fraction of carbon nanotubes was also varied in this composite system. An Al 2 O 3 -Y 2 O 3 powder mixture was used as a sintering additive in the consolidation of the SiC matrix. The characterization of the composites was investigated by means of SEM and three point bending tests. These composites showed a dense morphology of the matrix region, by the creation of a secondary phase. The composites reinforced with SiC chopped fibers possessed a flexural strength of about 400 MPa at room temperature. The flexural strength of the carbon nanotubes composites had a tendency to decrease with increased volume fraction of the reinforcing material.

Improvement of photoluminescence properties and thermal stability of Y2.9Ce0.1Al5−xSixO12 phosphors with Si3N4 addition

International Nuclear Information System (INIS)

Zhang, Fangfang; Song, Kaixin; Jiang, Jun; Wu, Song; Zheng, Peng; Huang, Qingming; Xu, Junming; Qin, Huibin

2014-01-01

Highlights: • Y 2.9 Ce 0.1 Al 5−x Si x O 12 phosphors were prepared by solid-state reaction in reduced air ambience. • Si 4+ could be incorporated into the host lattice of Y 3 Al 5 O 12 through partial occupation of the Al 3+ sites. • Si 3 N 4 addition can improve photoluminescence efficiency and thermal stability of Y 3 Al 5 O 12 :Ce. - Abstract: A series of Si 3 N 4 doping Y 2.9 Ce 0.1 Al 5−x Si x O 12−3x/2 N 4x/3 phosphors were prepared by solid-state reaction in 95%N 2 –5%H 2 reduced air ambience. The XRD characteristics plus Rietveld refinement results shows that the as-sintered powders are unique crystal phase with the same crystal structure of Y 3 Al 5 O 12 (PDF No. 79-1891). The N element was not detected by the analysis of X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectrum (EDS). The photoluminescence spectra (PL and PLE) tests show that the exciting and emitting intensity of PLE and PL gradually increase due to the increase of Si 3 N 4 concentration. Meanwhile, the phosphorescence decay times are prolonged from 45 ns (x = 0) to 78 ns (x = 0.3), under the monitor of 530 nm wavelength. The thermoluminescence tests (TL) confirm the thermal stability of as-phosphors with Si 3 N 4 addition is much better than that of the pristine Y 2.9 Ce 0.1 Al 5 O 12 phosphors

Recent results from a Si/CdTe semiconductor Compton telescope

International Nuclear Information System (INIS)

Tanaka, Takaaki; Watanabe, Shin; Takeda, Shin'ichiro; Oonuki, Kousuke; Mitani, Takefumi; Nakazawa, Kazuhiro; Takashima, Takeshi; Takahashi, Tadayuki; Tajima, Hiroyasu; Sawamoto, Naoyuki; Fukazawa, Yasushi; Nomachi, Masaharu

2006-01-01

We are developing a Compton telescope based on high-resolution Si and CdTe detectors for astrophysical observations in sub-MeV/MeV gamma-ray region. Recently, we constructed a prototype Compton telescope which consists of six layers of double-sided Si strip detectors (DSSDs) and CdTe pixel detectors to demonstrate the basic performance of this new technology. By irradiating the detector with gamma rays from radio isotope sources, we have succeeded in Compton reconstruction of images and spectra. The obtained angular resolution is 3.9 o (FWHM) at 511keV, and the energy resolution is 14keV (FWHM) at the same energy. In addition to the conventional Compton reconstruction, i.e., drawing cones in the sky, we also demonstrated a full reconstruction by tracking Compton recoil electrons using the signals detected in successive Si layers. By irradiating 137 Cs source, we successfully obtained an image and a spectrum of 662keV line emission with this method. As a next step, development of larger DSSDs with a size of 4cmx4cm is under way to improve the effective area of the Compton telescope. We are also developing a new low-noise analog ASIC to handle the increasing number of channels. Initial results from these two new technologies are presented in this paper as well

Refinement of Mg2Si reinforcement in a commercial Al–20%Mg2Si in-situ composite with bismuth, antimony and strontium

International Nuclear Information System (INIS)

Nordin, Nur Azmah; Farahany, Saeed; Ourdjini, Ali; Abu Bakar, Tuty Asma; Hamzah, Esah

2013-01-01

Refinement by addition elements of Al–Mg 2 Si alloys is known to result in a change of primary Mg 2 Si morphology. In this paper, the effects of Bi, Sb and Sr on the characteristic parameters of Al–20%Mg 2 Si in-situ composite have been investigated by computer aided cooling curve thermal analysis and microstructural inspection. Size, density and aspect ratio measurements showed that additions of 0.4 wt.% Bi, 0.8 wt.% Sb and 0.01 wt.% Sr refined the Mg 2 Si reinforcement. Exceeding these concentrations, however, resulted in coarsening of Mg 2 Si particles with no change in the morphology. The results also showed that addition elements caused a decrease in the nucleation and growth temperatures of Mg 2 Si particles. The refining effect of Bi, Sb and Sr is likely to be related to the effect of oxide bifilms suspended in the composite melt as favored nucleation substrates for Mg 2 Si particles. - Highlight: • 0.4 wt.%, 0.8 wt.% and 0.01 wt.% is the optimum content for Bi, Sb and Sr addition. • Exceeding optimum concentration resulted in the coarsening of reinforcements. • Nucleation and growth temperatures decrease with addition of Bi, Sb and Sr. • The refining effect of Bi, Sb and Sr is likely to be related to the oxide bifilms

Combined addition of nano diamond and nano SiO{sub 2}, an effective method to improve the in-field critical current density of MgB{sub 2} superconductor

Energy Technology Data Exchange (ETDEWEB)

Rahul, S.; Varghese, Neson; Vinod, K.; Devadas, K.M.; Thomas, Syju; Anees, P. [National Institute for Interdisciplinary Science and Technology (CSIR), Trivandrum 695019 (India); Chattopadhyay, M.K.; Roy, S.B. [Magnetic and Superconducting Materials Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Syamaprasad, U., E-mail: syamcsir@gmail.com [National Institute for Interdisciplinary Science and Technology (CSIR), Trivandrum 695019 (India)

2011-11-15

Highlights: {yields} Both nano diamond and nano SiO{sub 2} caused significant modifications in the structural properties of pure MgB{sub 2} sample. {yields} Reduction in T{sub C} for the best codoped sample was approximately 2 K. {yields} The best codoped sample yielded a J{sub C}, an order of magnitude more than the undoped one at 5 K and 8 T. {yields} The enhanced flux pinning capability provided by the additives is responsible for the improved in-field J{sub C}. -- Abstract: MgB{sub 2} bulk samples added with nano SiO{sub 2} and/or nano diamond were prepared by powder-in-sealed-tube (PIST) method and the effects of addition on structural and superconducting properties were studied. X-ray diffraction (XRD) analysis revealed that the addition caused systematic reduction in 'a' lattice parameter due to the substitution of C atoms at B sites and the strain caused by reacted intragrain nano particles of Mg{sub 2}Si as evinced by transmission electron microscope image. Scanning electron microscopy images showed distinct microstructural variations with SiO{sub 2}/diamond addition. It was evident from DC magnetization measurements that the in-field critical current density [J{sub C}(H)] of doped samples did not fall drastically like the undoped sample. Among the doped samples the J{sub C}(H) of co-doped samples were significantly higher and the best co-doped sample yielded a J{sub C}, an order of magnitude more than the undoped one at 5 K and 8 T.

Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

Science.gov (United States)

Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

2017-10-01

This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

Application of SiC masses as tube liners in municipal incinerators. Anwendung von SiC-Massen fuer Rohrverkleidungen in kommunalen Muellverbrennungsanlagen

Energy Technology Data Exchange (ETDEWEB)

Jeon, In Soo.

1993-09-02

Phosphate-bonded SiC masses with different additives were investigated. The reference mass was a SiC mass consisting of 90% by mass of SiC and 10% by mass of Al[sub 2]O[sub 3]. The reactive alumina ([alpha]-Al[sub 2]O[sub 3]) served as reaction partner for the aluminium phosphate binder. The physical and thermomechanical properties as well as the corrosion resistance of the developed SiC masses were investigated, and the reactions of the additives with the aluminium phosphate binder were investigated. The best combination of properties required of a refractory liner for waste incinerators was found in masses with Si[sub 3]N[sub 4] additives. These masses have optimal physical and thermomechanical properties and a high resistance to the corrosive gases and alkaline slags produced in modern incinerators. (orig./EF)

Progress report on R and D results from the advanced neutron source

Energy Technology Data Exchange (ETDEWEB)

West, C D [Oak Ridge National Laboratory, Oak Ridge, TN (United States)

1992-07-01

This presentation consists of six parts describing the the following: Oxide Formation; U{sub 3}Si{sub 2} Fuel Performance; Aluminum Irradiation Properties and Code Case; Fuel Plate Hydraulic Stability; Thermal-Hydraulic Test Loop designed to examine the CHF/flow instability limits and thermal hydraulic correlations of the ANS core; Cold Source Design Concept. HFIR results indicate good performance of U{sub 3}Si{sub 2} for ANS conditions. Additional data from HFIR tests, RERTR fuel, and simulation experiments are expected to improve understanding of basic behavior. Further research plans for the cold neutron source are: Test the circulation system, Test beryllium fabricability and properties, Develop and test modified pressure-balanced cryostat, design, if possible, of safe continued operation of the reactor even if cold source refrigeration is lost.

The Stellar Imager (SI) Project: A Deep Space UV/Optical Interferometer (UVOI) to Observe the Universe at 0.1 Milli-Arcsec Angular Resolution

Science.gov (United States)

Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

2008-01-01

The Stellar Imager (SI) is a space-based, UV/ Optical Interferometer (UVOI) designed to enable 0.1 milliarcsecond (mas) spectral imaging of stellar surfaces and of the Universe in general. It will also probe via asteroseismology flows and structures in stellar interiors. SI's science focuses on the role of magnetism in the Universe and will revolutionize our understanding, of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes, such as accretion, in the Universe. The ultra-sharp images of SI will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI is a "Flagship and Landmark Discovery Mission" in the 2005 Heliophysics Roadmap and a potential implementation of the UVOI in the 2006 Science Program for NASA's Astronomy and Physics Division. We present here the science goals of the SI Mission, a mission architecture that could meet those goals, and the technology development needed to enable this missin. Additional information on SI can be found at: http://hires.gsfc.nasa.gov/si/.

Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system

International Nuclear Information System (INIS)

Richardson, C.; Takoudis, C.G.

1999-01-01

The thermal, chemical, and physical properties of SiC make it an attractive material for a wide range of applications from wear resistant coatings on tools to high temperature microelectronics operations. A comprehensive thermodynamic analysis has been performed for the Si/H/C/O system from which a priori process-property relationships of the chemical vapor deposition (CVD) of silicon carbide (SiC) are obtained. The parameter space for pure silicon carbide growth is reported for five orders of magnitude of the system water vapor level (1 ppb--100 ppm), four orders of magnitude of system pressure (0.1--760 Torr), and two orders of magnitude of C/Si feed ratio (0.25--20) and H 2 /Si feed ratio (50--10,000). Lower growth temperatures for pure SiC are predicted in clean systems with low system water vapor levels, at stoichiometric to near carbon excess conditions (C/Si ≅ 1 to C/Si > 1), at high carrier gas flow rates (large H 2 /Si feed ratios), and at low operating pressures. Because relative C/Si and H 2 /Si feed ratios have been considered, the predictions in this study are applicable to both multiple and single precursor systems. Further, these results are valid for the CVD of α-SiC as well as β-SiC. Experimental data reported on the growth of α-SiC and β-SiC are found to be in satisfactory agreement with the theoretical predictions, for numerous systems that include multiple and single source, silicon and carbon, species

A TEM study of strained SiGe/Si and related heteroepitaxial structures

International Nuclear Information System (INIS)

Benedetti, Alessandro

2002-01-01

The role of SiGe/Si heterostructures and related materials has become increasingly important within the last few decades. In order to increase the scale of integration, however, devices with active elements not larger than few tens of nanometer have been recently introduced. There is, therefore, a strong need for an analytical technique capable of giving information about submicron-sized components. An investigation on a nanometre scale can be performed by the combination of a fully equipped Transmission Electron Microscope (TEM) with a Field Emission Gun (PEG) electron source, which enables one to use a wide range of analytical techniques with an electron probe as small as 0.5 nm. In this work, two different types of SiGe/Si-based devices were investigated. Strained-Si n-channel MOSFETs. The use of Strained-Si n-channel grown on SiGe should improve both carrier mobility and transconductance with respect to conventional MOSFETs. Materials analysed in this work showed an extremely high transconductance but a rather low mobility. In order to relate their microstructural properties to their electrical performance, as well as to improve the device design, a full quantitative and qualitative structural characterisation was performed. SiGe Multiple Quantum Wells (MQW) IR detectors Light detection is achieved by collecting the photogenerated carriers, injected from the SiGe QWs layers into the Si substrate. A key factor is the Ge profile across a single QW, since it governs the band structure and therefore the device performances. Four different TEM techniques were used to determine the Ge distribution across a single well, showing an overall good agreement among the results. The Ge profiles broadening, consistent with data available in literature, was successfully explained and theoretically predicted by the combined effect of Ge segregation and gas dwell times within the reactor. (author)

Removal of C and SiC from Si and FeSi during ladle refining and solidification

Energy Technology Data Exchange (ETDEWEB)

Klevan, Ole Svein

1997-12-31

The utilization of solar energy by means of solar cells requires the Si to be very pure. The purity of Si is important for other applications as well. This thesis mainly studies the total removal of carbon from silicon and ferrosilicon. The decarburization includes removal of SiC particles by stirring and during casting in addition to reduction of dissolved carbon by gas purging. It was found that for three commercial qualities of FeSi75, Refined, Gransil, and Standard lumpy, the refined quality is lowest in carbon, followed by Gransil and Standard. A decarburization model was developed that shows the carbon removal by oxidation of dissolved carbon to be a slow process at atmospheric pressure. Gas stirring experiments have shown that silicon carbide particles are removed by transfer to the ladle wall. The casting method of ferrosilicon has a strong influence on the final total carbon content in the commercial alloy. Shipped refined FeSi contains about 100 ppm total carbon, while the molten alloy contains roughly 200 ppm. The total carbon out of the FeSi-furnace is about 1000 ppm. It is suggested that low values of carbon could be obtained on an industrial scale by injection of silica combined with the use of vacuum. Also, the casting system could be designed to give low carbon in part of the product. 122 refs., 50 figs., 24 tabs.

Fracture mode, microstructure and temperature-dependent elastic moduli for thermoelectric composites of PbTe-PbS with SiC nanoparticle additions

Science.gov (United States)

Ni, Jennifer E.; Case, Eldon D.; Schmidt, Robert D.; Wu, Chun-I.; Hogan, Timothy P.; Trejo, Rosa M.; Lara-Curzio, Edgar; Kanatzidis, Mercouri G.

2013-12-01

Twenty-six (Pb0.95Sn0.05Te)0.92(PbS)0.08-0.055% PbI2-SiC nanoparticle (SiCnp) composite thermoelectric specimens were either hot pressed or pulsed electric current sintered (PECS). Bloating (a thermally induced increase in porosity, P, for as-densified specimens) was observed during annealing at temperatures >603 K for hot-pressed specimens and PECS-processed specimens from wet milled powders, but in contrast seven out of seven specimens densified by PECS from dry milled powders showed no observable bloating following annealing at temperatures up to 936 K. In this study, bloating in the specimens was accessed via thermal annealing induced changes in (i) porosity measured by scanning electron microscopy on fractured specimen surfaces, (ii) specimen volume and (iii) elastic moduli. The moduli were measured by resonant ultrasound spectroscopy. SiCnp additions (1-3.5 vol.%) changed the fracture mode from intergranular to transgranular, inhibited grain growth, and limited bloating in the wet milled PECS specimens. Inhibition of bloating likely occurs due to cleaning of contamination from powder particle surfaces via PECS processing which has been reported previously in the literature.

Atomic state and characterization of nitrogen at the SiC/SiO2 interface

International Nuclear Information System (INIS)

Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

2014-01-01

We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO 2 interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO 2 ). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

Directory of Open Access Journals (Sweden)

D. Laroche

2015-10-01

Full Text Available We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ∼ 100 nm to ∼ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ∼ 2.3. At the highest achievable densities in the quantum wells buried at intermediate depth, an exponent α ∼ 5 is observed. We propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.

The characteristics of photo-CVD SiO{sub 2} and its application on SiC MIS UV photodetectors

Energy Technology Data Exchange (ETDEWEB)

Liu, C.H.; Chang, C.S.; Chang, S.J.; Su, Y.K.; Chiou, Y.Z.; Liu, S.H.; Huang, B.R

2003-07-15

SiO{sub 2} layers were deposited onto SiC by photo-chemical vapor deposition (photo-CVD) using deuterium (D{sub 2}) lamp as the excitation source. For the photo-SiO{sub 2} deposited 500 deg. C, interface state density (D{sub it}) was estimated to be 5.66x10{sup 11} cm{sup -2} eV{sup -1}. With an applied electric field of 4 MV cm{sup -1}, it was found that the leakage current was only 3.15x10{sup -8} A cm{sup -2} for the photo-CVD SiO{sub 2} layer prepared at 500 deg. C. It was also found that photo-SiO{sub 2} could effectively suppress dark current of SiC-based photodetectors (PDs). It was found that we could reduce dark current of SiC-based PDs by about three orders of magnitude by the insertion of a 5 nm-thick photo-CVD SiO{sub 2} film in between Indium-tin-oxide (ITO) contact and the underneath SiC. Photocurrent to dark current ratio of ITO/SiO{sub 2}/SiC MIS PDs was also found to be much larger than that of conventional ITO/SiC Schottky barrier PDs.

Additive effect of BPA and Gd-DTPA for application in accelerator-based neutron source

International Nuclear Information System (INIS)

Yoshida, F.; Yamamoto, T.; Nakai, K.; Zaboronok, A.; Matsumura, A.

2015-01-01

Because of its fast metabolism gadolinium as a commercial drug was not considered to be suitable for neutron capture therapy. We studied additive effect of gadolinium and boron co-administration using colony forming assay. As a result, the survival of tumor cells with additional 5 ppm of Gd-DTPA decreased to 1/10 compared to the cells with boron only. Using gadolinium to increase the effect of BNCT instead of additional X-ray irradiation might be beneficial, as such combination complies with the short-time irradiation regimen at the accelerator-based neutron source. - Highlights: • Gd-DTPA is widely clinically used as a contrast medium for MRI. • Shift to an accelerator-based neutron source is advantageous for gadolinium NCT. • Boron–gadolinium NCT effects on tumor cell lines were significant. • Additional administration of Gd-DTPA might enhance the effect of BPA–BNCT.

Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

Science.gov (United States)

Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

2013-11-01

Silicon carbide (SiC) coatings with varying thickness (ranging from 0.14 μm to 2.67 μm) were deposited onto the surfaces of Type KD-I SiC fibres with native carbonaceous surface using chemical vapour deposition (CVD) process. Then, two dimensional SiC fibre reinforced SiC matrix (2D SiCf/SiC) composites were fabricated using polymer infiltration and pyrolysis (PIP) process. Influences of the fibre coating thickness on mechanical properties of SiC fibre and SiCf/SiC composite were investigated using single-filament test and three-point bending test. The results indicated that flexural strength of the composites initially increased with the increasing CVD SiC coating thickness and reached a peak value of 363 MPa at the coating thickness of 0.34 μm. Further increase in the coating thickness led to a rapid decrease in the flexural strength of the composites. The bending modulus of composites showed a monotonic increase with increasing coating thickness. A chemical attack of hydrogen or other ions (e.g. a C-H group) on the surface of SiC fibres during the coating process, owing to the formation of volatile hydrogen, lead to an increment of the surface defects of the fibres. This was confirmed by Wang et al. [35] in their work on the SiC coating of the carbon fibre. In the present study, the existing ˜30 nm carbon on the surface of KD-I fibre [36] made the fibre easy to be attacked. Deposition of non-stoichiometric SiC, causing a decrease in strength. During the CVD process, a small amount of free silicon or carbon always existed [35]. The existence of free silicon, either disordered the structure of SiC and formed a new source of cracks or attacked the carbon on fibre surface resulting in properties degeneration of the KD-I fibre. The effect of residual stress. The different thermal expansion coefficient between KD-I SiC fibre and CVD SiC coating, which are 3 × 10-6 K-1 (RT ˜ 1000 °C) and 4.6 × 10-6 K-1 (RT ˜ 1000 °C), respectively, could cause residual stress

Defining and comparing vibration attributes of AlSi10 foam and CFRP coated AlSi10 foam materials

Science.gov (United States)

Çolak, O.; Yünlü, L.

2017-06-01

Now, Aluminum materials have begun being manufactured as porous structures and being used with additive composite materials through emerging manufacturing technologies. These materials those porous structures have also begun being used in many areas such as automotive and aerospace due to light-weighted structures. In addition to examining mechanical behavior of porous metallic structures, examining vibration behavior is important for defining characteristic specifications. In this study, vibration attributes belong to %80 porous AlSi10 foam and CFRP coated %80 porous AlSi10 foam are determined with modal analysis. Modal parameters such as natural frequencies and damping coefficient from frequency response functions at the end of hammer impact tests. It is found that natural frequency of CFRP coated AlSi10 foam’s is 1,14 times bigger than AlSi10 foam and damping coefficient of CFRP coated AlSi10 foam is 5 times bigger than AlSi10 foam’s with tests. Dynamic response of materials in various conditions is simulated by evaluating modal parameters with FEM. According to results of the study, CFRP coating on AlSi10 foam effect vibration damping and resonance avoidance ability positively.

Study of astrophysically important resonant states in 26Si by the 28Si(4He,6He)26Si reaction

Science.gov (United States)

Kwon, Young Kwan; Lee, C. S.; Moon, J. Y.; Lee, J. H.; Kim, J. Y.; Kubono, S.; Iwasa, N.; Inafiki, K.; Yamaguchi, H.; He, J. J.; Saito, A.; Wakabayashi, Y.; Fukijawa, H.; Amadio, G.; Khiem, L. H.; Tanaka, M.; Chen, A.; Kato, S.

PoS(NIC-IX)024 , b, H. Yamaguchia, J. J. Hea , A. Saitoa , Y. Wakabayashia, H. Fujikawaa, G. The emission of 1.809 MeV gamma-ray from the first excited state of 26 Mg followed by beta- decay of 26 Al in its ground state (denoted as 26 Alg.s. ) has been identified by gamma-ray telescopes such the Compton Gamma-Ray Observatory (CGRO) [1]. To resolve controversy over the pos- sible sources of the observational 1.809 MeV gamma-rays, one needs accurate knowledge of the production rate of 26 Al. The 25 Al(p,γ)26Si reaction which is the competition reaction for produc- tion of 26 Alg.s. is one of the important subjects to be investigated. In this work, the astrophysically important 26 Si states above the proton threshold were studied via the 28 Si(4 He,6 He)26 Si reaction. We have preformed an angular distribution measurement using the high resolution QDD spectro- graph (PA) at Center for Nuclear Study (CNS), University of Tokyo. The experimental results and data analysis will be presented.

Electron microscopy study of Ni induced crystallization in amorphous Si thin films

International Nuclear Information System (INIS)

Radnóczi, G. Z.; Battistig, G.; Pécz, B.; Dodony, E.; Vouroutzis, N.; Stoemenos, J.; Frangis, N.; Kovács, A.

2015-01-01

The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi 2 phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi 2 grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a second region is also observed with large grains of Ni 3 Si 2 . Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization

Palladium transport in SiC

International Nuclear Information System (INIS)

Olivier, E.J.; Neethling, J.H.

2012-01-01

Highlights: ► We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. ► The high temperature mobility of palladium silicides within polycrystalline SiC was studied. ► Corrosion of SiC by Pd was seen in all cases. ► The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. ► The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd 2 Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

NIMROD Simulations of the HIT-SI and HIT-SI3 Devices

Science.gov (United States)

Morgan, Kyle; Jarboe, Tom; Hossack, Aaron; Chandra, Rian; Everson, Chris

2017-10-01

The Helicity Injected Torus with Steady Inductive helicity injection (HIT-SI) experiment uses a set of inductively driven helicity injectors to apply non-axisymmetric current drive on the edge of the plasma, driving an axisymmetric spheromak equilibrium in a central confinement volume. Significant improvements have been made to extended MHD modeling of HIT-SI, with both the resolution of disagreement at high injector frequencies in HIT-SI in addition to successes with the new upgraded HIT-SI3 device. Previous numerical studies of HIT-SI, using a zero-beta eMHD model, focused on operations with a drive frequency of 14.5 kHz, and found reduced agreement with both the magnetic profile and current amplification at higher frequencies (30-70 kHz). HIT-SI3 has three helicity injectors which are able to operate with different mode structures of perturbations through the different relative temporal phasing of the injectors. Simulations that allow for pressure gradients have been performed in the parameter regimes of both devices using the NIMROD code and show improved agreement with experimental results, most notably capturing the observed Shafranov-shift due to increased beta observed at higher finj in HIT-SI and the variety of toroidal perturbation spectra available in HIT-SI3. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Fusion Energy Sciences under Award Number DE-FG02- 96ER54361.

Detail study of SiC MOSFET switching characteristics

DEFF Research Database (Denmark)

Li, Helong; Munk-Nielsen, Stig

2014-01-01

This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage...

RF plasma deposition of thin Si{sub x}Ge{sub y}C{sub z}:H films using a combination of organometallic source materials

Energy Technology Data Exchange (ETDEWEB)

Rapiejko, C. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Gazicki-Lipman, M. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland)]. E-mail: gazickim@p.lodz.pl; Klimek, L. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Szymanowski, H. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Strojek, M. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland)

2004-12-22

Elements of the IV group of periodic table have been strongly present in the fast development of PECVD techniques for the last two decades at least. As a result, deposition technologies of such materials as a-Si:H, a-C:H, m{mu}-C:H or DLC have been successfully established. What has followed is an ever growing interest in binary systems of the A{sub x}(IV)B{sub y}(IV):H kind. One possible way to deposit such systems is to use organosilicon compounds (to deposit Si{sub x}C{sub y}:H films) or organogermanium compounds (to deposit Ge{sub x}C{sub y}:H films), as source substances. The present paper reports on a RF plasma deposition of a Si{sub x}Ge{sub y}C{sub z}:H ternary system, using a combination of organosilicon and organogermanium compounds. Thin Si/Ge/C films have been fabricated in a small volume (ca. 2 dm{sup 3}) parallel plate RF plasma reactor using, as a source material, a combination of tetramethylsilane (TMS) and tetramethylgermanium (TMG) vapours carried by argon. SEM investigations reveal a continuous compact character of the coatings and their uniform thickness. The elemental composition of the films has been studied using EDX analysis. The results of the analysis show that the elemental composition of the films can be controlled by both the TMG/TMS ratio of the initial mixture and the RF power input. Ellipsometric measurements show good homogeneity of these materials. Chemical bonding in the films has been studied using the FTIR technique. Bandgap calculations have been carried out using ellipsometric data and by applying both the Tauc law and the Moss approach.

Li{sub 4}SiO{sub 4} based breeder ceramics with Li{sub 2}TiO{sub 3}, LiAlO{sub 2} and Li{sub X}La{sub Y}TiO{sub 3} additions, part I: Fabrication

Energy Technology Data Exchange (ETDEWEB)

Kolb, M.H.H., E-mail: Matthias.kolb@kit.edu [Karlsruhe Institute of Technology, Institute for Applied Materials, PO Box 3640, 76021 Karlsruhe (Germany); Mukai, K.; Knitter, R. [Karlsruhe Institute of Technology, Institute for Applied Materials, PO Box 3640, 76021 Karlsruhe (Germany); Hoshino, T. [Breeding Functional Materials Development Group, Department of Blanket Systems Research, Rokkasho Fusion Institute, Fusion Energy Research and Development Directorate, National Institutes for Quantum and Radiological Science and Technology (QST) (Japan)

2017-02-15

Highlights: • This study shows that the emulsion method can easily be adapted to add different phases into Li4SiO4 breeder pebbles. • Slurries with various compositions to form LOS + LMT, LOS + LAO and LOS + LLTO were processed.The calculated activation behavior shows that samples with added LAO or LLTO qualify as low activation material. • Yet, the long-term activation of the LAO containing samples is problematic as hands-on level activity is not reached quickly. - Abstract: Wet-chemical fabrication processes are highly adaptable to a wide range of raw materials and are therefore well suited for evaluating new material compositions. Here the established emulsion method was modified to fabricate novel two-phase Li{sub 4}SiO{sub 4} pebbles of 1 mm diameter with additions of Li{sub 2}TiO{sub 3}, LiAlO{sub 2} or Li{sub x}La{sub y}TiO{sub 3}. As the lithium density of the latter two compounds is relatively low, only moderate contents were added. The Li{sub 2}TiO{sub 3} additions, however, cover the full compositional range. The fabrication process was characterized with regard to its constancy and aptness for the anticipated pebble compositions by optical pebble size measurements. Also the phase content and the elemental composition of the fabricated pebbles were analyzed by XRD and ICP-OES combined with XRF, respectively. This work shows that the emulsion method is an appropriate method to produce pebbles with the anticipated Li{sub 2}TiO{sub 3} and LiAlO{sub 2} concentrations in a Li{sub 4}SiO{sub 4} matrix. However, Li{sub 4}SiO{sub 4} and Li{sub x}La{sub y}TiO{sub 3} react with each other to a number of different phases. To evaluate the activation properties of the pebbles, FISPACT calculations with a DEMO relevant neutron source are applied as well. The addition of aluminum seems to be unfavorable for a fusion application, but moderate concentrations of lanthanum can be tolerated.

Refinement of Mg{sub 2}Si reinforcement in a commercial Al–20%Mg{sub 2}Si in-situ composite with bismuth, antimony and strontium

Energy Technology Data Exchange (ETDEWEB)

Nordin, Nur Azmah; Farahany, Saeed, E-mail: saeedfarahany@gmail.com; Ourdjini, Ali; Abu Bakar, Tuty Asma; Hamzah, Esah

2013-12-15

Refinement by addition elements of Al–Mg{sub 2}Si alloys is known to result in a change of primary Mg{sub 2}Si morphology. In this paper, the effects of Bi, Sb and Sr on the characteristic parameters of Al–20%Mg{sub 2}Si in-situ composite have been investigated by computer aided cooling curve thermal analysis and microstructural inspection. Size, density and aspect ratio measurements showed that additions of 0.4 wt.% Bi, 0.8 wt.% Sb and 0.01 wt.% Sr refined the Mg{sub 2}Si reinforcement. Exceeding these concentrations, however, resulted in coarsening of Mg{sub 2}Si particles with no change in the morphology. The results also showed that addition elements caused a decrease in the nucleation and growth temperatures of Mg{sub 2}Si particles. The refining effect of Bi, Sb and Sr is likely to be related to the effect of oxide bifilms suspended in the composite melt as favored nucleation substrates for Mg{sub 2}Si particles. - Highlight: • 0.4 wt.%, 0.8 wt.% and 0.01 wt.% is the optimum content for Bi, Sb and Sr addition. • Exceeding optimum concentration resulted in the coarsening of reinforcements. • Nucleation and growth temperatures decrease with addition of Bi, Sb and Sr. • The refining effect of Bi, Sb and Sr is likely to be related to the oxide bifilms.

Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

Directory of Open Access Journals (Sweden)

Wei-Ting eLai

2016-02-01

Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

Amorphous SiOx nanowires catalyzed by metallic Ge for optoelectronic applications

International Nuclear Information System (INIS)

Nie Tianxiao; Chen Zhigang; Wu Yueqin; Lin Jianhui; Zhang Jiuzhan; Fan Yongliang; Yang Xinju; Jiang Zuimin; Zou Jin

2011-01-01

Research highlights: → Metallic Ge has been demonstrated as an effective catalyst for the growth of SiO x nanowires on Si substrates. → Such a catalyst may avoid catalyst contamination caused by their unconsciousness left in the nanowires. → Two broad peaks centered at 410 nm and 570 nm were observed in photoluminescence spectrum, indicating that such SiO x nanowires have the potential applications in white light-emitting diodes, full-colour display, full-colour indicator and light sources. - Abstract: Amorphous SiO x nanowires, with diameters of ∼20 nm and lengths of tens of μm, were grown from self-organized GeSi quantum dots or GeSi alloy epilayers on Si substrates. The morphologies and yield of these amorphous nanowires depend strongly upon the synthesis temperature. Comparative experiments indicate that the present SiO x nanowires are induced by metallic Ge as catalysts via the solid liquid solid growth mechanism. Two broad peaks centered at 410 nm and 570 nm were observed in photoluminescence spectrum, indicating that such SiO x nanowires have the potential applications in white light-emitting diodes, full-colour display, full-colour indicator and light sources.

The Stellar Imager (SI) project: a deep space UV/Optical Interferometer (UVOI) to observe the Universe at 0.1 milli-arcsec angular resolution

Science.gov (United States)

Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

2009-04-01

The Stellar Imager (SI) is a space-based, UV/Optical Interferometer (UVOI) designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and of the Universe in general. It will also probe via asteroseismology flows and structures in stellar interiors. SI’s science focuses on the role of magnetism in the Universe and will revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes, such as accretion, in the Universe. The ultra-sharp images of SI will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI is a “Flagship and Landmark Discovery Mission” in the 2005 Heliophysics Roadmap and a potential implementation of the UVOI in the 2006 Science Program for NASA’s Astronomy and Physics Division. We present here the science goals of the SI Mission, a mission architecture that could meet those goals, and the technology development needed to enable this mission. Additional information on SI can be found at: http://hires.gsfc.nasa.gov/si/

siMacro: A Fast and Easy Data Processing Tool for Cell-Based Genomewide siRNA Screens

Directory of Open Access Journals (Sweden)

Nitin Kumar Singh

2013-03-01

Full Text Available Growing numbers of studies employ cell line-based systematic short interfering RNA (siRNA screens to study gene functions and to identify drug targets. As multiple sources of variations that are unique to siRNA screens exist, there is a growing demand for a computational tool that generates normalized values and standardized scores. However, only a few tools have been available so far with limited usability. Here, we present siMacro, a fast and easy-to-use Microsoft Office Excel-based tool with a graphic user interface, designed to process single-condition or two-condition synthetic screen datasets. siMacro normalizes position and batch effects, censors outlier samples, and calculates Z-scores and robust Z-scores, with a spreadsheet output of >120,000 samples in under 1 minute.

Functional materials - Study of process for CVD SiC/C composite material

Energy Technology Data Exchange (ETDEWEB)

Choi, Doo Jin; Wang, Chae Chyun; Lee, Young Jin; Oh, Byung Jun [Yonsei University, Seoul (Korea)

2000-04-01

The CVD SiC coating techniques are the one of high functional material manufactures that improve the thermal, wear, oxidization and infiltration resistance of the surface of raw materials and extend the life of material. Silicon carbide films have been grown onto graphite substrates by low pressure chemical vapor deposition using MTS(CH{sub 3}SiCl{sub 3}) as a source precursor and H{sub 2} or N{sub 2} as a diluent gas. The experiments for temperature and diluent gas addition changes were performed. The effect of temperature from 900 deg. C to 1350 deg. C and the alteration of diluent gas species on the growth rate and structure of deposits have been studied. The experimental results showed that the deposition rate increased with increasing deposition temperature irrespective of diluent gases and reactant depletion effect increased especially at H{sub 2} diluent gas ambient. As the diluent gas added, the growth rate decreased parabolically. For N{sub 2} addition, surface morphology of leaf-like structure appeared, and for H{sub 2}, faceted structure at 1350 deg. C. The observed features were involved by crystalline phase of {beta}-SiC and surface composition with different gas ambient. We also compared the experimental results of the effect of partial pressure on the growth rate with the results of theoretical approach based on the Langmuir-Hinshelwood model. C/SiC composites were prepared by isothermal chemical vapor infiltration (ICVI). In order to fabricate the more dense C/SiC composites, a novel process of the in-situ whisker growing and filling during ICVI was devised, which was manipulated by alternating dilute gas species. The denser C/SiC composites were successfully prepared by the novel process comparing with the conventional ICVI process. 64 refs., 36 figs., 5 tabs. (Author)

Improved thermal stability and hole mobilities in a strained-Si/strained-Si1-yGe y/strained-Si heterostructure grown on a relaxed Si1-xGe x buffer

International Nuclear Information System (INIS)

Gupta, Saurabh; Lee, Minjoo L.; Isaacson, David M.; Fitzgerald, Eugene A.

2005-01-01

A dual channel heterostructure consisting of strained-Si/strained-Si 1-y Ge y on relaxed Si 1-x Ge x (y > x), provides a platform for fabricating metal-oxide-semiconductor field-effect transistors (MOSFETs) with high hole mobilities (μ eff ) which depend directly on Ge concentration and strain in the strained-Si 1-y Ge y layer. Ge out-diffuses from the strained-Si 1-y Ge y layer into relaxed Si 1-x Ge x during high temperature processing, reducing peak Ge concentration and strain in the strained-Si 1-y Ge y layer and degrades hole μ eff in these dual channel heterostructures. A heterostructure consisting of strained-Si/strained-Si 1-y Ge y /strained-Si, referred to as a trilayer heterostructure, grown on relaxed Si 1-x Ge x has much reduced Ge out-flux from the strained-Si 1-y Ge y layer and retains higher μ eff after thermal processing. Improved hole μ eff over similar dual channel heterostructures is also observed in this heterostructure. This could be a result of preventing the hole wavefunction tunneling into the low μ eff relaxed Si 1-x Ge x layer due to the additional valence band offset provided by the underlying strained-Si layer. A diffusion coefficient has been formulated and implemented in a finite difference scheme for predicting the thermal budget of the strained SiGe heterostructures. It shows that the trilayer heterostructures have superior thermal budgets at higher Ge concentrations. Ring-shaped MOSFETs were fabricated on both platforms and subjected to various processing temperatures in order to compare the extent of μ eff reduction with thermal budget. Hole μ eff enhancements are retained to a much higher extent in a trilayer heterostructure after high temperature processing as compared to a dual channel heterostructure. The improved thermal stability and hole μ eff of a trilayer heterostructure makes it an ideal platform for fabricating high μ eff MOSFETs that can be processed over higher temperatures without significant losses in hole �

XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

International Nuclear Information System (INIS)

Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

2005-01-01

Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

Properties of tribology for Si implanted PET

International Nuclear Information System (INIS)

Wu Yuguang; Zhang Tonghe; Zhang Xu; Liu Andong; Xie Mengxia; Zhang Aimin; Chen Jianmin

2002-01-01

Polyethylene terephthalate (PET) has been modified with Si ions from a metal vapor arc source (MEVVA). After implantation, the surface structure has been greatly changed. The experimental results of infrared absorption indicated that the particles are referred to rich carbon and SiC particles. The PET has been strengthened by these dispersed particles. The measurement results using nanometer hardness tester reveal that both surface hardness and modulus increase obviously. Therefore the surface wear resistance improved extremely. Finally the modification mechanism of Si implanted PET was discussed

Joining of SiC/SiCf ceramic matrix composites for fusion reactor blanket applications

International Nuclear Information System (INIS)

Colombo, P.; Riccardi, B.; Donato, A.; Scarinci, G.

2000-01-01

Using a preceramic polymer, joints between SiC/SiC f ceramic matrix composites were obtained. The polymer, upon pyrolysis at high temperature, transforms into a ceramic material and develops an adhesive bonding with the composite. The surface morphology of 2D and 3D SiC/SiC f composites did not allow satisfactory results to be obtained by a simple application of the method initially developed for monolithic SiC bodies, which employed the use of a pure silicone resin. Thus, active or inert fillers were mixed with the preceramic polymer, in order to reduce its volumetric shrinkage which occurs during pyrolysis. In particular, the joints realized using the silicone resin with Al-Si powder as reactive additive displayed remarkable shear strength (31.6 MPa maximum). Large standard deviation for the shear strength has nevertheless been measured. The proposed joining method is promising for the realization of fusion reactor blanket structures, even if presently the measured strength values are not fully satisfactory

New evaluation method of crack growth in SiC/SiC composites using interface elements

International Nuclear Information System (INIS)

Serizawa, H.; Ando, M.; Lewinsohn, C.A.; Murakawa, H.

2000-01-01

Crack propagation behavior in SiC/SiC composites was analyzed using a new computer simulation method that included time-dependent interface elements. The simulation method was used to describe the time-dependent crack growth in SiC/SiC composites under four-point bending of single-edge-notched beam bend-bars. Two methods were used to simulate time-dependent crack growth in SiC/SiC composites due to fiber creep. In one method, the creep property was introduced into the interface elements by the general method of finite element method (FEM) analysis. In the second method, a new technique making the best use of the potential function was used to represent crack closure tractions due to creeping fibers. The stage-II slow crack growth of a general creep deformation was simulated by both methods. Additionally, stage-III crack growth and the transition from stage-II to stage-III could be simulated by the new method. The new method has the potential to completely simulate time-dependent crack growth behavior in SiC/SiC composites due to fiber creep

Multiscale Engineered Si/SiO x Nanocomposite Electrodes for Lithium-Ion Batteries Using Layer-by-Layer Spray Deposition.

Science.gov (United States)

Huang, Chun; Kim, Ayoung; Chung, Dong Jae; Park, Eunjun; Young, Neil P; Jurkschat, Kerstin; Kim, Hansu; Grant, Patrick S

2018-05-09

Si-based high-capacity materials have gained much attention as an alternative to graphite in Li-ion battery anodes. Although Si additions to graphite anodes are now commercialized, the fraction of Si that can be usefully exploited is restricted due to its poor cyclability arising from the large volume changes during charge/discharge. Si/SiO x nanocomposites have also shown promising behavior, such as better capacity retention than Si alone because the amorphous SiO x helps to accommodate the volume changes of the Si. Here, we demonstrate a new electrode architecture for further advancing the performance of Si/SiO x nanocomposite anodes using a scalable layer-by-layer atomization spray deposition technique. We show that particulate C interlayers between the current collector and the Si/SiO x layer and between the separator and the Si/SiO x layer improved electrical contact and reduced irreversible pulverization of the Si/SiO x significantly. Overall, the multiscale approach based on microstructuring at the electrode level combined with nanoengineering at the material level improved the capacity, rate capability, and cycling stability compared to that of an anode comprising a random mixture of the same materials.

Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

Science.gov (United States)

Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

2018-02-01

We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.

Palladium transport in SiC

Energy Technology Data Exchange (ETDEWEB)

Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

2012-03-15

Highlights: Black-Right-Pointing-Pointer We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. Black-Right-Pointing-Pointer The high temperature mobility of palladium silicides within polycrystalline SiC was studied. Black-Right-Pointing-Pointer Corrosion of SiC by Pd was seen in all cases. Black-Right-Pointing-Pointer The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. Black-Right-Pointing-Pointer The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd{sub 2}Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

Three-dimensional atomic-image reconstruction from a single-energy Si(100) photoelectron hologram

International Nuclear Information System (INIS)

Matsushita, T.; Agui, A.; Yoshigoe, A.

2004-01-01

Full text: J. J. Barton proposed a basic algorithm for three-dimensional atomic-image reconstruction from photoelectron hologram, which is based on the Fourier transform(FT). In the use of a single-energy hologram, the twin-image appears in principle. The twin image disappears in the use of multi-energy hologram, which requires longer measuring time and variable-energy light source. But the reconstruction in the use of a simple FT is difficult because the scattered electron wave is not s-symmetric wave. Many theoretical and experimental approaches based on the FT have been researched. We propose a new algorithm so-called 'scattering pattern matrix', which is not based on the FT. The algorithm utilizes the 'scattering pattern', and iterative gradient method. Real space image can be reconstructed from a single-energy hologram without initial model. In addition, the twin image disappears. We reconstructed the three-dimensional atomic image of Si bulk structure from an experimental single-energy hologram of Si(100) 2s emission, which is shown The experiment was performed with using a Al-K α light source. The experimental setup is shown in. Then we calculated a vertical slice image of the reconstructed Si bulk structure, which is shown. The atomic images appear around the expected positions

High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries

Directory of Open Access Journals (Sweden)

Keiichiro Homma

2014-04-01

Full Text Available Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD at a material throughput of 480 g h−1. The powders are fundamentally an aggregate of primary ~20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g−1 after 100 cycles at the same time.

High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries.

Science.gov (United States)

Homma, Keiichiro; Kambara, Makoto; Yoshida, Toyonobu

2014-04-01

Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD) at a material throughput of 480 g h -1 . The powders are fundamentally an aggregate of primary ∼20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH 4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g -1 after 100 cycles at the same time.

Marbled texture of sputtered Al/Si alloy thin film on Si

Energy Technology Data Exchange (ETDEWEB)

Gentile, M.G. [Physics Department and NIS Interdepartmental Center, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Muñoz-Tabares, J.A.; Chiodoni, A. [Istituto Italiano di Tecnologia, Center for Space Human Robotics, Corso Trento 21, 10129 Torino (Italy); Sgorlon, C. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Para, I. [Department of Applied Science and Technology (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy); Carta, R.; Richieri, G. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Bejtka, K. [Istituto Italiano di Tecnologia, Center for Space Human Robotics, Corso Trento 21, 10129 Torino (Italy); Merlin, L. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Vittone, E. [Physics Department and NIS Interdepartmental Center, University of Torino, via P. Giuria 1, 10125 Torino (Italy)

2016-08-01

DC magnetron sputtering is a commonly used technique for the fabrication of silicon based electronic devices, since it provides high deposition rates and uniform large area metallization. However, in addition to the thickness uniformity, coating optical uniformity is a crucial need for semiconductor industrial processes, due to the wide use of optical recognition tools. In the silicon-based technology, aluminum is one of the most used materials for the metal contact. Both the pre-deposition substrate cleaning and the sputtering conditions determine the quality and the crystalline properties of the final Al deposited film. In this paper is shown that not all the mentioned conditions lead to good quality and uniform Al films. In particular, it is shown that under certain standard process conditions, Al/Si alloy (1% Si) metallization on a [100] Si presents a non-uniform reflectivity, with a marbled texture caused by flakes with milky appearance. This optical inhomogeneity is found to be caused by the coexistence of randomly orient Al/Si crystal, with heteroepitaxial Al/Si crystals, both grown on Si substrate. Based on the microstructural analysis, some strategies to mitigate or suppress this marbled texture of the Al thin film are proposed and discussed. - Highlights: • Sputtered Al/Si layers deposited on Si present evident optical non-uniformity • It could be an issue for optical recognition tools used in semiconductor industries • Optical non-uniformity is due to randomly oriented growth of Al grains. • Substrate misorientation and process temperature can mitigate the problem.

Effects of sulphur addition on modification and mechanical ...

African Journals Online (AJOL)

CW Onyia, BA Okorie, NI Amalu, SI Neife ... The results showed that the addition of sulphur to Al-12wt%Si alloy modified the Al-Si eutectic ... of the eutectic silicon structure with significant decrease in mechanical properties of the alloy and this ...

Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs

Science.gov (United States)

Bae, Tae-Eon; Wakabayashi, Yuki; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Improvement in the performance of Ge-source/Si-channel heterojunction tunneling FETs (TFETs) with high on-current/off-current (I on/I off) ratio and steep subthreshold swing (SS) is demonstrated. In this paper, we experimentally examine the effects of gas ambient [N2 and forming gas (4% H2/N2)] and a doping concentration in the drain regions on the electrical characteristics of Ge/Si heterojunction TFETs. The minimum SS (SSmin) of 70.9 mV/dec and the large I on/I off ratio of 1.4 × 107 are realized by postmetallization annealing in forming gas. Also, the steep SSmin and averaged SS (SSavr) values of 64.2 and 78.4 mV/dec, respectively, are obtained in low drain doping concentration. This improvement is attributable to the reduction in interface state density (D it) in the channel region and to the low leakage current in the drain region.

Synthesis and mechanical characterization of PZT/Sr based composite ceramics with addition of Si{sub 3}N{sub 4}; Sintese e caracterizacao mecanica de ceramicas compositas a base de PZT/Sr com adicoes de Si{sub 3}N{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Santos, M.A.P.; Santos, R.C.P.; Santos, M.C.C.; Rocha, C.D.G.; Silva, M., E-mail: cida@ipqm.mar.mil.b [Instituto de Pesquisas da Marinha (IPqM), Ilha do Governador, RJ (Brazil). Grupo de Materiais

2010-07-01

In the Underwater Acoustics field, piezoelectric ceramics are the most usually employed materials for the conversion of mechanical energy (acoustic signal) into electric energy (electric signal) and vice-versa, in sensors (hydrophones) or hydroacoustic projectors. In the development of new compositions for these applications, piezoelectric performance is generally prioritized, to the expense of its mechanical properties. With this in mind, the object of this work was to study the effects of the addition of Si{sub 3}N{sub 4} in the mechanical properties of PZT-Sr based electronic ceramics. Thus, a novel piezoelectric ceramic with the addition of small percentages in weight (0;0.1;1;3 and 5) of the structural ceramic Si{sub 3}N{sub 4} was successfully processed by the oxide mixing route ; the compounds were sintered in a conventional at 1200 deg C for 2h. The densities of the compounds thus obtained for the different percentages of Si{sub 3}N{sub 4} ranged from 55 to 97% and decreased with the increase of the content of Si{sub 3}N{sub 4}. Presence of equiaxial grains with normal growth was observed in all samples. MEV/EDS analysis of the micro-structures of the compositions detected the presence of a second phase rich in Zr, confirmed by DRX, which is a result of large quantities of volatilized PbO; the sintered pieces had their mechanical properties investigated by ultra-sonic inspection. It was observed that, among the sintered compositions, the PZT-Sr ceramic with 0.1% Si{sub 3}N{sub 4} presented the smallest value for Young's Modulus E and Shear Modulus G, 75 Gpa and 28 Gpa, respectively. The Poisson's Coefficients {nu} tended to decrease with the increase of Si{sub 3}N{sub 4} added to the PZT-Sr ceramic, indicating, thus, that the added compound may be used to adjust the mechanical properties of the material. (author)

Experimental Investigations on the effect of Additive on the Tensile Properties of Fiber Glass Fabric Lamina

Science.gov (United States)

Nava Sai Divya, A.; Raghu Kumar, B., Dr; Lakshmi Narayana, G., Dr

2017-09-01

The main objective of this work is to investigate the effect of additives on tensile behaviour of fiber glass fabric at lamina level to explore an alternative skin material for the outer body of aerospace applications and machines. This experimental work investigates the effect of silica concentration in epoxy resin lapox L-12 on the tensile properties of glass fabric lamina of 4H-satin weave having 3.6 mm thickness. The lamina was prepared by using hand lay-up method and tests were conducted on it. Various tensile properties values obtained from experimentation were compared for four glass fiber lamina composites fabricated by adding the silica powder to resin bath. The effect of variations in silica concentration (0% SiO2, 5% SiO2, 10% SiO2 and 15% SiO2) on the tensile properties of prepared material revealed that maximum stiffness was obtained at 15% and yield strength at 10% SiO2 concentration in glass fiber lamina. Increasing the silica concentration beyond 10% had led to deterioration in the material properties. The experimentation that was carried out on test specimen was reasonably successful as the effect of silica powder as an additive in glass fiber lamina enhanced the mechanical properties up to certain limit. The underpinning microscopic behaviour at the source of these observations will be investigated in a follow up work.

Self-organization of nanocluster δ-layers at ion-beam-mixed Si-SiO2 interfaces

International Nuclear Information System (INIS)

Roentzsch, L.

2003-11-01

This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of δ-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of ''bottom-up'' structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15 nm thin SiO 2 layer, which is enclosed by a 50 nm poly-Si capping layer and the Si substrate, is irradiated with Si + ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degree unattainable in common processes. A region of SiO x (x 2 matrix at a distance of ∼3 nm from the Si substrate. The physical mechanisms of ion mixing of the two Si-SiO 2 interfaces and subsequent phase separation, which result in the desired sample structure, are elucidated from the viewpoint of computer simulations. In addition, experimental evidence is presented based on various methods, including TEM, RBS, and SIMS. A novel method of Si nanocluster decoration is of particular importance which applies Ge as contrast enhancing element in TEM studies of tiny Si nanoclusters. (orig.)

Effect of Ca, Ce or K oxide addition on the activity of Ni/SiO{sub 2} catalysts for the methane decomposition reaction

Energy Technology Data Exchange (ETDEWEB)

Zapata, Beatriz; Torres-Garcia, Enelio [Instituto Mexicano del Petroleo, Programa de Procesos y Reactores, Eje C. 152, Mexico, D.F., C.P. 07730 (Mexico); Valenzuela, Miguel A.; Palacios, Jorge [Instituto Politecnico Nacional-ESIQIE, Lab. Catalisis y Materiales, Zacatenco, Mexico, D.F., C.P. 07738 (Mexico)

2010-11-15

To increase the activity and stability of Ni/SiO{sub 2} catalysts, a series of Ni-Ca, Ni-K and Ni-Ce promoted catalysts were prepared by successive impregnations. The textural properties, reducibility and catalytic performance in the methane decomposition reaction were investigated. The catalyst containing 30 wt.% Ni and 30 wt.% cerium oxide greatly increased the conversion of methane (90% of equilibrium value) and improved the stability, whereas the Ni-K and Ni-Ca were less active and stable than the Ni/SiO{sub 2} catalyst. The results suggest that Ce addition prevents the sintering of nickel particles during reduction process maintaining a random distribution between the silica and cerium oxide improving the distribution and migration of deposited carbon. (author)

Effect of SiO2 addition in the zirconia stabilization

International Nuclear Information System (INIS)

Pessoa, R.C.; Lima, U.R.; Nasar, M.C.; Nasar, R.S.; Yoshida, I.V.P.; Acchar, W.

2006-01-01

The aims of this work was investigated the zirconia stabilization with a mixture of resins based on silico nas promoting the Zr O 2 /Si O 2 formation. The powder was heated and characterized by TGA, DTA, FTIR, XRD and SEM/EDS. The results indicated the tetragonal and cubic phase formation stabilized at 1000 deg C/2 h. The increase of calcing temperature promoted decrease of stabilization. The amorphous silica calcined at 1000 deg C induced defects into the zirconia structure and favour the formation of more stable phases. The decrease of stabilization at high temperatures are related to growth of crystallite above of critical value. (author)

Sintering of Si C by hot-pressing with addition of Al{sub 2}O{sub 3} and concentrate of rare earths; Sinterizacao por prensagem a quente com SiC com adicao de Al{sub 2}O{sub 3} e concentrado de terras raras

Energy Technology Data Exchange (ETDEWEB)

Hwang, M.K.; Silva, C.R.M. [Centro Tecnico Aeroespacial (CTA-IAE), Sao Jose dos Campos, SP (Brazil). Inst. de Atividades Espaciais]. E-mail: miriamk@iae.cta.br; Nono, M.C.A.; Vieira, R.A. [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

2004-07-01

Silicon carbide (SiC) has essentially covalent bonds ({approx}88%). The high covalency bond is responsible for the good mechanical properties, although it induces a low self diffusion coefficient, making densification more difficult. For a successful densification is necessary to apply pressure on the samples, and/or the addition of sintering additives, which improves the densification. In this SiC samples with alumina (Al2O3) and concentrate of rare earth (CRE) addition were sintered by hot pressing in argon atmospheric at 20 MPa of pressure, heating rate of 20 deg C/min up to 1800 deg C and a dwell time of 1 h. Initially the CRE was calcined at 1000 deg C during 1 h. After that, three mixtures were prepared with distinct concentrations in high energy mill and the samples were sintered. The aim of this work is to improve SiC densification by the liquid phase formation during sintering owing to the additives reactions between itself. The pressure intensify the driving force for densification, taking the liquid phase to drain easier through the grain boundaries, making possible best accommodation and rearrangement of the grains. The application of the pressure on the samples during sintering contributes to improve densification and becomes possible sintering in lower temperature than conventional one. The phases of the sintered samples were analyzed by X-ray diffraction and the morphology were verified by scanning electron microscopy. (author)

Compared production behavior of borax and unborax premixed SiC reinforcement Al7Si-Mg-TiB alloys composites with semi-solid stir casting method

Science.gov (United States)

Haryono, M. B.; Sulardjaka, Nugroho, Sri

2016-04-01

The present study was aimed to investigate the effect of borax additive on physical and mechanical properties of Al7Si-Mg-TiB with the reinforcement of silicon carbide. In this case, the different weight percentage from the reinforcement of SiC (10, 15, and 20% wt), and the borax additive (ratio 1:4) were homogenously added into the matrix by employing the semi-solid stir casting method at the temperature of 590°C. Al7Si-Mg-TiB melted in an electric resistance furnace at 800°C for 25 minutes and the holding time of 5 minutes; SiC was stirred with borax inside the chamber and heated at the temperature of 250°C for 25 minutes. Then, it melted by lowing the temperature into 590°C. The SiC-borax mixture was added into the electric resistance furnace, and automatically stirred by the stirrer at a constant speed (500 rpm for 3 minutes) in the composite A17Si-Mg-TiB. It melted when heated at 750°C for 17minutes,then, casting was performed on the prepared mould. The characterizations of Al7Si-Mg-TiB-SiC/borax were porosity, hardness, and microstructure on the Al7Si-Mg-TiB-SiC/ borax. The porosity of AMC tended to increase along with the increaseof the wt% SiC (1.4%-3.6%); however, borax additive underwent a decrease in porosity (0.14%-1.3%). Further, hardness tended to improve along with the increase of wt% SiC. The unboraxmixture had 79,6 HRB up to 94 HRB. Whereas, the borax additive mixture had 105,8 HRB up to 121 HRB.

Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

International Nuclear Information System (INIS)

Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

2013-01-01

Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

DEFF Research Database (Denmark)

Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

1986-01-01

X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

International Nuclear Information System (INIS)

Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

2007-01-01

Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

International Nuclear Information System (INIS)

Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2008-01-01

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

Bulk quadrupole and interface dipole contribution for second harmonic generation in Si(111)

International Nuclear Information System (INIS)

Reitböck, Cornelia; Stifter, David; Alejo-Molina, Adalberto; Hingerl, Kurt; Hardhienata, Hendradi

2016-01-01

The second harmonic generation (SHG) response was measured for arbitrarily oriented linear input polarization on Si(111) surfaces in rotational anisotropy experiments. We show for the first time, using the simplified bond hyperpolarizability model (SBHM), that the observed angular shifts of the nonlinear peaks and symmetry features—related to changes in the input polarization—help to identify the corresponding interface dipolar and bulk quadrupolar SHG sources, yielding excellent agreement with the experiment. Additionally, we evaluate for the s-in/p-out (sp) and p-in/p-out (pp)-polarization SHG intensities the contributions from the individual Si bonds. Furthermore, a relation between the four parameters arising from SBHM and six coefficients of the phenomenological SHG theory needed to reproduce experimental data is established. (paper)

Interfacial mixing in as-deposited Si/Ni/Si layers analyzed by x-ray and polarized neutron reflectometry

Science.gov (United States)

Bhattacharya, Debarati; Basu, Saibal; Singh, Surendra; Roy, Sumalay; Dev, Bhupendra Nath

2012-12-01

Interdiffusion occurring across the interfaces in a Si/Ni/Si layered system during deposition at room temperature was probed using x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Exploiting the complementarity of these techniques, both structural and magnetic characterization with nanometer depth resolution could be achieved. Suitable model fitting of the reflectivity profiles identified the formation of Ni-Si mixed alloy layers at the Si/Ni and Ni/Si interfaces. The physical parameters of the layered structure, including quantitative assessment of the stoichiometry of interfacial alloys, were obtained from the analyses of XRR and PNR patterns. In addition, PNR provided magnetic moment density profile as a function of depth in the stratified medium.

Role of WC additive on reaction, solid-solution and densification in HfB2–SiC ceramics

DEFF Research Database (Denmark)

Hu, Dong-Li; Zheng, Qiang; Gu, Hui

2014-01-01

A comparative study of phase components and compositions was performed for the pressureless sintered HfB2–SiC–WC composites by various analytical methods. The relative decrease of HfB2 phase leads to a new reaction of HfO2 removal by WC to create B2O3. By using SiC instead of Si3N4 as milling med...

Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

Science.gov (United States)

Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

2018-02-01

As novel materials for food contact packaging, inorganic silicon oxide (SiO x ) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiO x films for food packaging it is vital to study the interaction between SiO x layers and food contaminants, as well as the function of a SiO x barrier layer in antioxidant migration resistance. In this study, we deposited a SiO x layer on polylactic acid (PLA)-based films to prepare SiO x /PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiO x /PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiO x layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiO x /PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiO x /PLA coated films increase. The SiO x barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiO x /PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

Synthesis of whiskers of SiC microwave assisted; Sintesis de whiskers de SiC asistida por microondas

Energy Technology Data Exchange (ETDEWEB)

Garza-Mendez, F. J.; Vanegas, A. J.; Vazquez, B. A.; Garza-Paz, J.

2013-06-01

We developed a new process for the synthesis of SiC whiskers assisted by microwaves; this is based on the mixture of silica xerogels and graphite powder. As energy source were used microwaves of 2.45 GHz and 1.0 kW of power RMS. On the other hand, mesoporous silica was synthesized via sol-gel, the precursors used were TEOS/H{sub 2}O and ethanol. Through analysis of the BET is determined the value of average pore size (3.0 nm) and the surface area (1090 m2/g).By mean of X-Ray diffraction it was demonstrated that the silica obtained is an amorphous solid and, the powders obtained in the microwave synthesis are {beta}-SiC. Synthesized SiC powders were observed using a SEM in secondary electron mode, it was observed that this powders consists of SiC whiskers. The effect of microwaves on the synthesis of whiskers of SiC is discussed in the present work. (Author) 19 refs.

Formation of Si-C-N ceramics from melamine-carbosilazane single source precursors

International Nuclear Information System (INIS)

Shatnawi, Mazin; Al-Mansi, Wafaa; Arafa, Isam

2008-01-01

A series of melamine-carbosilazane pre-ceramic macromolecules (Mel-CSZs) were prepared by the condensation of melamine with different organochlorosilanes (R x SiCl 4-x where R is CH 3 /C 6 H 5 and x is 1, 2 or 3) using pyridine as a solvent under nitrogen atmosphere. These melamine-based carbosilazane macromolecules (Mel-CSZs) were characterized by infrared spectroscopy (FT-IR), mass spectrometry (MS), thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). The backbone of the resulting Mel-CSZs consists of melamine and carbosilazane building blocks. Pyrolysis of these Mel-CSZs at 600 deg. C under nitrogen and vacuum afforded the corresponding silicon-based nonoxide carbonitride ceramics (Si-C-N). The microstructure and textural morphology of the resulting fine ceramic materials were examined using FT-IR, powder X-ray diffraction (XRD), and scanning electron microscopy (SEM). - Graphical abstract: Pyrolysis of the prepared melamine-organosilane macromolecules afforded Si-C-N ceramics with different textural morphology

Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.

Science.gov (United States)

Sun, Yiling; Gao, Pingqi; He, Jian; Zhou, Suqiong; Ying, Zhiqin; Yang, Xi; Xiang, Yong; Ye, Jichun

2016-12-01

Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (V oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front PSS, rear-SiNx:H, front PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.

Effect of Adding Elements on Microstructure of Mg-3Si Alloy

Directory of Open Access Journals (Sweden)

CUI Bin

2017-03-01

Full Text Available The microstructure of alloy Mg-3Si(mass fraction/%, same as below after successive additions with different elements of Zn, Nd, Gd and Y was observed and the microstructure evolution was investigated by scanning electron microscopy and X-ray diffraction. The results show the primary Mg2Si particles co-exist with eutectic Mg2Si particles in binary alloy Mg-Si. With minor addition of Zn element, only primary Mg2Si can be found in ternary Mg-3Si-3Zn system while eutectic Mg2Si particles disappear. In quaternary alloy Mg-2.0Nd-3.0Zn-3.0Si, the addition of Nd element can effectively refine the primary Mg2Si particles and form some Mg41Nd5 particles. After continuous adding of Gd and Y elements into quaternary system, Gd5Si3 and YSi particles increase significantly in the alloy Mg-8.0Gd-4.0Y-2.0Nd-3.0Zn-3.0Si, while volume fraction of primary Mg2Si decrease significantly. Thermo-Calc calculation predicts that the Gibbs free energy for primary particles Gd5Si3, YSi is lower, and therefore Gd, Y atom and Si are more likely to form compounds. In Mg-8Gd-4Y-2Nd-3Zn-3Si alloy, room temperature Gibbs free energy for primary particles Mg2Si, Gd5Si3, YSi is -9.56×104, -8.72×104, -2.83×104J/mol, respectively, and the mass fraction of these particles is 8.07%, 5.27%, 1.40% respectively.

UV laser drilling of SiC for semiconductor device fabrication

Energy Technology Data Exchange (ETDEWEB)

Krueger, Olaf; Schoene, Gerd; Wernicke, Tim; John, Wilfred; Wuerfl, Joachim; Traenkle, Guenther [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2007-04-15

Pulsed UV laser processing is used to drill micro holes in silicon carbide (SiC) wafers supporting AlGaN/GaN transistor structures. Direct laser ablation using nanosecond pulses has been proven to provide an efficient way to create through and blind holes in 400 {mu}m thick SiC. When drilling through, openings in the front pads are formed, while blind holes stop {approx}40 {mu}m before the backside and were advanced to the electrical contact pad by subsequent plasma etching without an additional mask. Low induction connections (vias) between the transistor's source pads and the ground on the backside were formed by metallization of the holes. Micro vias having aspect ratios of 5-6 have been processed in 400 {mu}m SiC. The process flow from wafer layout to laser drilling is available including an automated beam alignment that allows a positioning accuracy of {+-}1 {mu}m with respect to existing patterns on the wafer. As proven by electrical dc and rf measurements the laser-assisted via technologies have successfully been implemented into fabrication of AlGaN/GaN high-power transistors.

Fabrication and Analysis of the Wear Properties of Hot-Pressed Al-Si/SiCp + Al-Si-Cu-Mg Metal Matrix Composite

Science.gov (United States)

Bang, Jeongil; Oak, Jeong-Jung; Park, Yong Ho

2016-01-01

The aim of this study was to characterize microstructures and mechanical properties of aluminum metal matrix composites (MMC's) prepared by powder metallurgy method. Consolidation of mixed powder with gas atomized Al-Si/SiCp powder and Al-14Si-2.5Cu-0.5Mg powder by hot pressing was classified according to sintering temperature and sintering time. Sintering condition was optimized using tensile properties of sintered specimens. Ultimate tensile strength of the optimized sintered specimen was 228 MPa with an elongation of 5.3% in longitudinal direction. In addition, wear properties and behaviors of the sintered aluminum-based MMC's were analyzed in accordance with vertical load and linear speed. As the linear speed and vertical load of the wear increased, change of the wear behavior occurred in order of oxidation of Al-Si matrix, formation of C-rich layer, Fe-alloying to matrix, and melting of the specimen

MuSiK Projekt:Multimaterialdruck von C/Si/SiC-Keramiken

OpenAIRE

Marigo, Gloria; Wahl, Larissa; Nauditt, Gotthard

2017-01-01

Poster über den ersten 6 Monate von MuSiK Projekt. Additive Verfahren wurden ursprünglich zur effizienten Herstellung von Mustern und Prototypen entwickelt und bieten besondere Einsatzpotentiale, die mittlerweile auch für die Kleinserienproduktion hochinteressant sind. Im Bereich der keramischen Komponenten ist der Einsatz additiver Verfahren bislang nicht weit verbreitet. Ein Grund dafür ist unter anderem die eingeschränkte Verfügbarkeit der notwendigen Fertigungsanlagen und entsprech...

Effects of the curing methods on the fabrication of polycarbosilane derived SiCf/SiC composite

International Nuclear Information System (INIS)

Park, Ji Yeon; Kim, Weon Ju; Ryu, Woo Seog; Woo, Chang Hyun; Han, Bum Soo

2005-01-01

Silicon carbide has potential advantages for structural applications in the next generation energy system- VHTR, GFR and the fusion reactor due to its unique properties such as a good irradiation resistance and thermo-mechanical properties, less severe waste generation due to neutron activation and improved plant conversion efficiencies by higher operating temperatures. Among the several fabrication processes for SiC f /SiC composites, the polymer impregnation and pyrolysis (PIP) process is the only method derived from polymeric precursors. In the PIP process, the careful control of the oxygen content is important to avoid the property degradation at a high temperature because polymeric precursors are used as source materials of SiC ceramics. During the polymer precursor conversion process, unintended oxygen may be introduced for a cross-linking with producing the Si-O-Si bonds at the curing step. High oxygen content affects the degradation of the high temperature stability in SiC ceramics. Therefore, a decrease of the oxygen content is desirable to obtain SiC ceramics with the high temperature stability. One of the methods to reduce the oxygen content of polymer derived SiC ceramics is the irradiation curing process by gamma ray or electron beam. Polymer derived SiC ceramics with the low oxygen content prepared by the electron beam curing showed the improved thermal stability at a higher temperature. In this study, the electron beam (EB) and the thermal oxidation curing methods were applied to make SiC f /SiC composite using a polymer precursor, polycarbosilane (PCS) by the PIP process. And the evaluations of the curing effects, the pyrolysis behaviors and a high temperature stability were performed

BaSi2 formation mechanism in thermally evaporated films and its application to reducing oxygen impurity concentration

Science.gov (United States)

Hara, Kosuke O.; Yamamoto, Chiaya; Yamanaka, Junji; Arimoto, Keisuke; Nakagawa, Kiyokazu; Usami, Noritaka

2018-04-01

Thermal evaporation is a simple and rapid method to fabricate semiconducting BaSi2 films. In this study, to elucidate the BaSi2 formation mechanism, the microstructure of a BaSi2 epitaxial film fabricated by thermal evaporation has been investigated by transmission electron microscopy. The BaSi2 film is found to consist of three layers with different microstructural characteristics, which is well explained by assuming two stages of film deposition. In the first stage, BaSi2 forms through the diffusion of Ba atoms from the deposited Ba-rich film to the Si substrate while in the second stage, the mutual diffusion of Ba and Si atoms in the film leads to BaSi2 formation. On the basis of the BaSi2 formation mechanism, two issues are addressed. One is the as-yet unclarified reason for epitaxial growth. It is found important to quickly form BaSi2 in the first stage for the epitaxial growth of upper layers. The other issue is the high oxygen concentration in BaSi2 films around the BaSi2-Si interface. Two routes of oxygen incorporation, i.e., oxidation of the Si substrate surface and initially deposited Ba-rich layer by the residual gas, are identified. On the basis of this knowledge, oxygen concentration is decreased by reducing the holding time of the substrate at high temperatures and by premelting of the source. In addition, X-ray diffraction results show that the decrease in oxygen concentration can lead to an increased proportion of a-axis-oriented grains.

Fabrication of highly oriented D03-Fe3Si nanocrystals by solid-state dewetting of Si ultrathin layer

International Nuclear Information System (INIS)

Naito, Muneyuki; Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko; Nakao, Motoi; Sudoh, Koichi

2013-01-01

In this paper, highly oriented nanocrystals of Fe 3 Si with a D0 3 structure are fabricated on SiO 2 using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO 2 layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe 3 Si nanocrystals with D0 3 , B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe 3 Si nanocrystals with a D0 3 single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0 3 -Fe 3 Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0 3 structure after post-deposition annealing

Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

Science.gov (United States)

Al-Kabi, Sattar H. Sweilim

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid

Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

Science.gov (United States)

Chang, P. K.; Hwu, J. G.

2017-04-01

The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

Improved nucleic acid descriptors for siRNA efficacy prediction.

Science.gov (United States)

Sciabola, Simone; Cao, Qing; Orozco, Modesto; Faustino, Ignacio; Stanton, Robert V

2013-02-01

Although considerable progress has been made recently in understanding how gene silencing is mediated by the RNAi pathway, the rational design of effective sequences is still a challenging task. In this article, we demonstrate that including three-dimensional descriptors improved the discrimination between active and inactive small interfering RNAs (siRNAs) in a statistical model. Five descriptor types were used: (i) nucleotide position along the siRNA sequence, (ii) nucleotide composition in terms of presence/absence of specific combinations of di- and trinucleotides, (iii) nucleotide interactions by means of a modified auto- and cross-covariance function, (iv) nucleotide thermodynamic stability derived by the nearest neighbor model representation and (v) nucleic acid structure flexibility. The duplex flexibility descriptors are derived from extended molecular dynamics simulations, which are able to describe the sequence-dependent elastic properties of RNA duplexes, even for non-standard oligonucleotides. The matrix of descriptors was analysed using three statistical packages in R (partial least squares, random forest, and support vector machine), and the most predictive model was implemented in a modeling tool we have made publicly available through SourceForge. Our implementation of new RNA descriptors coupled with appropriate statistical algorithms resulted in improved model performance for the selection of siRNA candidates when compared with publicly available siRNA prediction tools and previously published test sets. Additional validation studies based on in-house RNA interference projects confirmed the robustness of the scoring procedure in prospective studies.

Effects of the addition of different nitrogen sources in the tequila fermentation process at high sugar concentration.

Science.gov (United States)

Arrizon, J; Gschaedler, A

2007-04-01

To study the effect of the addition of different nitrogen sources at high sugar concentration in the tequila fermentation process. Fermentations were performed at high sugar concentration (170 g l(-1)) using Agave tequilana Weber blue variety with and without added nitrogen from different sources (ammonium sulfate; glutamic acid; a mixture of ammonium sulfate and amino acids) during the exponential phase of growth. All the additions increased the fermentation rate and alcohol efficiency. The level of synthesis of volatile compounds depended on the source added. The concentration of amyl alcohols and isobutanol were decreased while propanol and acetaldehyde concentration increased. The most efficient nitrogen sources for fermentation rate were ammonium sulfate and the mixture of ammonium sulfate and amino acids. The level of volatile compounds produced depended upon types of nitrogen. The synthesis of some volatile compounds increased while others decreased with nitrogen addition. The addition of nitrogen could be a strategy for improving the fermentation rate and efficiency in the tequila fermentation process at high sugar Agave tequilana concentration. Furthermore, the sensory quality of the final product may change because the synthesis of the volatile compounds is modified.

Transformation from amorphous to nano-crystalline SiC thin films ...

Indian Academy of Sciences (India)

Administrator

phous SiC to cubic nano-crystalline SiC films with the increase in the gas flow ratio. Raman scattering ... Auger electron spectroscopy showed that the carbon incorporation in the .... with a 514 nm Ar+ laser excitation source and the laser.

Effect of additional sample bias in Meshed Plasma Immersion Ion Deposition (MPIID) on microstructural, surface and mechanical properties of Si-DLC films

Energy Technology Data Exchange (ETDEWEB)

Wu, Mingzhong [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Tian, Xiubo, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Li, Muqin [School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Gong, Chunzhi [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Wei, Ronghua [Southwest Research Institute, San Antonio, TX 78238 (United States)

2016-07-15

Highlights: • A novel Meshed Plasma Immersion Ion Deposition is proposed. • The deposited Si-DLC films possess denser structures and high deposition rate. • It is attributed to ion bombardment of the deposited films. • The ion energy can be independently controlled by an additional bias (novel set up). - Abstract: Meshed Plasma Immersion Ion Deposition (MPIID) using cage-like hollow cathode discharge is a modified process of conventional PIID, but it allows the deposition of thick diamond-like carbon (DLC) films (up to 50 μm) at a high deposition rate (up to 6.5 μm/h). To further improve the DLC film properties, a new approach to the MPIID process is proposed, in which the energy of ions incident to the sample surface can be independently controlled by an additional voltage applied between the samples and the metal meshed cage. In this study, the meshed cage was biased with a pulsed DC power supply at −1350 V peak voltage for the plasma generation, while the samples inside the cage were biased with a DC voltage from 0 V to −500 V with respect to the cage to study its effect. Si-DLC films were synthesized with a mixture of Ar, C{sub 2}H{sub 2} and tetramethylsilane (TMS). After the depositions, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectrons spectroscopy (XPS), Raman spectroscopy and nanoindentation were used to study the morphology, surface roughness, chemical bonding and structure, and the surface hardness as well as the modulus of elasticity of the Si-DLC films. It was observed that the intense ion bombardment significantly densified the films, reduced the surface roughness, reduced the H and Si contents, and increased the nanohardness (H) and modulus of elasticity (E), whereas the deposition rate decreased slightly. Using the H and E data, high values of H{sup 3}/E{sup 2} and H/E were obtained on the biased films, indicating the potential excellent mechanical and tribological properties of the films. In this

A soft x-ray photoemission study of the chemisorption and reaction of diethylsilane on Si(100)

International Nuclear Information System (INIS)

Lapiano-Smith, D.A.; Himpsel, F.J.

1993-06-01

Soft x-ray synchrotron radiation was utilized as the excitation source in a high-resolution photoemission experiment on chemisorption and subsequent reaction of diethylsilane on the Si(100) surface. We have found that diethylsilane chemisorbs dissociatively to form Si-CH 2 CH 3 surface species on Si(100) following a room temperature exposure. These species are identified by two very sharp peaks observed in the valence band spectra positioned at 17.9 and 14.3 eV binding energy. In addition, C 1s core level spectra, measured following exposures of Si(100) substrates as a function of surface temperature, show that carbon, in some form, exists on the Si surface following exposures at every temperature from room temperature to about 600C. While only -CH 2 CH 3 , ethyl groups are observed on the surface at room temperature, these species appear to partially dehydrogenate at 300C, producing a mixture of -CH 2 CH 3 groups and other intermediate carbonaceous species. At a growth temperature of about 400C the intermixing of elemental carbon with Si begins. At higher temperatures, we observe the continued degradation of diethylsilane to produce a Si + C alloy on the surface at 600C. Results indicate that diethylsilane has potential as a molecular precursor for SiC formation by chemical vapor deposition techniques

Microstructural and mechanical characterization of Al–Zn–Si nanocomposites

Energy Technology Data Exchange (ETDEWEB)

García-Villarreal, S. [Centro de Investigación en Materiales Avanzados S.C. Monterrey, 66600, Alianza Nte. 202, Parque PIIT, Apodaca, N.L. (Mexico); Chávez-Valdez, A. [Katcon Institute for Innovation and Technology KIIT, 66629, Alianza Sur 200, Apodaca, N.L. (Mexico); Moreno, K.J. [Instituto Tecnológico de Celaya, Apartado Postal 57, 38010 Celaya, Guanajuato (Mexico); Leyva, C.; Aguilar-Martínez, J.A. [Centro de Investigación en Materiales Avanzados S.C. Monterrey, 66600, Alianza Nte. 202, Parque PIIT, Apodaca, N.L. (Mexico); Hurtado, A. [Centro de Investigación en Materiales Avanzados S.C., 31109, Miguel de Cervantes 120, Chih., Chih. (Mexico); Arizmendi-Morquecho, A., E-mail: ana.arizmendi@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C. Monterrey, 66600, Alianza Nte. 202, Parque PIIT, Apodaca, N.L. (Mexico)

2013-09-15

In this paper the addition of silicon nanoparticles into Al–Zn alloys to form metallic matrix nanocomposites by mechanical alloying process was investigated. The influence of various process parameters such as milling time and Si concentration in the Al–Zn matrix has an interesting effect on the microstructure and mechanical properties of the synthesized nanocomposites. The microstructural characterization of the nanocomposites was evaluated by transmission electron microscopy and energy dispersive X-ray spectroscopy (TEM–EDXS) and the mechanical properties were measured by nanoindentation and micro-hardness tests. The results showed that during mechanical milling Si is added to the Al–Zn matrix achieving a uniform and homogeneous dispersion. After solidification, it forms small particles of AlZnSi with blocky morphology in interdendritic regions. The nanoindentation profiles showed that the elastic modulus and hardness properties increase with increasing milling time. However, a high concentration of Si (> 1.2 wt.%) results in a saturation of Si in the Al–Zn matrix, which adversely affects the mechanical properties. Thus, it is important to tune the milling time and concentration of Si added to the Al–Zn alloys to control the growth of brittle phases that result in reduction of the mechanical properties of the material. - Highlights: • A novel technique for addition of Si nanocomposites into Al–Zn liquid alloy is reported. • Good dispersion and homogeneity of Si in the Al–Zn matrix are obtained. • Increasing Si content above 1.2 wt.% decreases the mechanical properties of Al–Zn alloy. • The saturation point of Si in 1.2 wt.% differs from Galvalume® composition. • The Al–Zn–1.5Si alloy with addition of nanocomposite shows 5.7 GPa of hardness.

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Energy Technology Data Exchange (ETDEWEB)

Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

2008-01-15

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

Optimization of Silicon parameters as a betavoltaic battery: Comparison of Si p-n and Ni/Si Schottky barrier

International Nuclear Information System (INIS)

Rahmani, Faezeh; Khosravinia, Hossein

2016-01-01

Theoretical studies on the optimization of Silicon (Si) parameters as the base of betavoltaic battery have been presented using Monte Carlo simulations and the state equations in semiconductor to obtain maximum power. Si with active area of 1 cm 2 has been considered in p-n junction and Schottky barrier structure to collect the radiation induced-charge from 10 mCi cm −2 of Nickle-63 ( 63 Ni) Source. The results show that the betavoltaic conversion efficiency in the Si p-n structure is about 2.7 times higher than that in the Ni/Si Schottky barrier structure. - Highlights: • Silicon parameters were studied in betavoltaic batteries. • Studied betavoltaic batteries include p-n and Schottky barrier structures. • The p-n structure has higher conversion efficiency.

Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

International Nuclear Information System (INIS)

Leung, To Chi.

1991-01-01

A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

High-rate synthesis of microcrystalline silicon films using high-density SiH4/H2 microwave plasma

International Nuclear Information System (INIS)

Jia, Haijun; Saha, Jhantu K.; Ohse, Naoyuki; Shirai, Hajime

2007-01-01

A high electron density (> 10 11 cm -3 ) and low electron temperature (1-2 eV) plasma is produced by using a microwave plasma source utilizing a spoke antenna, and is applied for the high-rate synthesis of high quality microcrystalline silicon (μc-Si) films. A very fast deposition rate of ∼ 65 A/s is achieved at a substrate temperature of 150 deg. C with a high Raman crystallinity and a low defect density of (1-2) x 10 16 cm -3 . Optical emission spectroscopy measurements reveal that emission intensity of SiH and intensity ratio of H α /SiH are good monitors for film deposition rate and film crystallinity, respectively. A high flux of film deposition precursor and atomic hydrogen under a moderate substrate temperature condition is effective for the fast deposition of highly crystallized μc-Si films without creating additional defects as well as for the improvement of film homogeneity

Solution-derived sodalite made with Si- and Ge-ethoxide precursors for immobilizing electrorefiner salt

Energy Technology Data Exchange (ETDEWEB)

Riley, Brian J., E-mail: brian.riley@pnnl.gov; Lepry, William C.; Crum, Jarrod V.

2016-01-15

Chlorosodalite has the general form of Na{sub 8}(AlSiO{sub 4}){sub 6}Cl{sub 2} and this paper describes experiments conducted to synthesize sodalite with a solution-based approach to immobilize a simulated spent electrorefiner salt solution containing a mixture of alkali, alkaline earth, and lanthanide chlorides. The reactants used were the salt solution, NaAlO{sub 2}, and either Si(OC{sub 2}H{sub 5}){sub 4} or Ge(OC{sub 2}H{sub 5}){sub 4}. Additionally, seven different glass sintering aids (at loadings of 5 mass%) were evaluated as sintering aids for consolidating the as-made powders using a cold-press-and-sinter technique. This process of using alkoxide additives for the Group IV component can be used to produce large quantities of sodalite at near-room temperature as compared to a method where colloidal silica was used as the silica source. However, the small particle sizes inhibited densification during heat treatments.

On the Relation of Silicates and SiO Maser in Evolved Stars

Energy Technology Data Exchange (ETDEWEB)

Liu, Jiaming; Jiang, Biwei, E-mail: bjiang@bnu.edu.cn [Department of Astronomy, Beijing Normal University, Beijing 100875 (China)

2017-04-01

The SiO molecule is one of the candidates for the seed of silicate dust in the circumstellar envelope of evolved stars, but this opinion is challenged. In this work we investigate the relation of the SiO maser emission power and the silicate dust emission power. With both our own observation by using the PMO/Delingha 13.7 m telescope and archive data, a sample is assembled of 21 SiO v  = 1, J  = 2 − 1 sources and 28 SiO v  = 1, J  = 1 − 0 sources that exhibit silicate emission features in the ISO /SWS spectrum as well. The analysis of their SiO maser and silicate emission power indicates a clear correlation, which is not against the hypothesis that the SiO molecules are the seed nuclei of silicate dust. On the other hand, no correlation is found between SiO maser and silicate crystallinity, which may imply that silicate crystallinity does not correlate with mass-loss rate.

Preparation and property of β-SiAlON:Eu{sup 2+} luminescent fibers by an electrospinning method combined with carbothermal reduction nitridation

Energy Technology Data Exchange (ETDEWEB)

Liu, Qian, E-mail: qianliu@sunm.shcnc.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Shanghai Institute of Materials Genome, Shanghai 200444 (China); Lu, Qi [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Shanghai Institute of Materials Genome, Shanghai 200444 (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Liu, Guanghui [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Shanghai Institute of Materials Genome, Shanghai 200444 (China); Wei, Qinhua [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Shanghai Institute of Materials Genome, Shanghai 200444 (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China)

2016-01-15

β-SiAlON:Eu{sup 2+} phosphors synthesis usually requires higher temperatures and higher nitrogen pressure conditions. In the present research, a low temperature technique has been developed to synthesize both β-SiAlON and Eu-doped β-SiAlON fibers by electrospinning combined with carbothermal reduction nitridation (CRN). The carbon sources used as reductant in CRN procedure have been optimized to effectively produce a well-crystallized β-SiAlON phase at lower temperatures of 1370–1500 °C. Additionally, through adding sucrose and covering activated carbon powders on the top of fiber precursor layers, the highly-pure β-SiAlON and β-SiAlON:Eu{sup 2+} fibers could be obtained. The pyrolysis behavior of fiber precursors, crystalline phase, morphology, and UV excited luminescence properties of the produced ceramic fibers were also studied by using TG–DSC measurement, XRD analysis, SEM observation, and spectrometer method. The resultant fibers exhibit a smooth surface and an uniforme morphology with a substantial length. Moreover, the β-SiAlON:Eu{sup 2+} fibers thus prepared show a blue light emission peaked at 470 nm under UV excitation. - Highlights: • Eu{sup 2+} doped b-SiAlON blue luminescent fibers were successfully prepared. • Use of electrospinning with carbothermal reduction nitridation. • Sucrose was utilized as carbon source to effectively form β-SiAlON:Eu{sup 2+}. • Active carbon powders were covered on fiber precursor layers during processing. • Produced fibers own smooth surface and uniform morphology.

Controlling contamination in Mo/Si multilayer mirrors by Si surface capping modifications

Science.gov (United States)

Malinowski, Michael E.; Steinhaus, Chip; Clift, W. Miles; Klebanoff, Leonard E.; Mrowka, Stanley; Soufli, Regina

2002-07-01

The performance of Mo/Si multilayer mirrors (MLMs) used to reflect UV (EUV) radiation in an EUV + hydrocarbon (NC) vapor environment can be improved by optimizing the silicon capping layer thickness on the MLM in order to minimize the initial buildup of carbon on MLMs. Carbon buildup is undesirable since it can absorb EUV radiation and reduce MLM reflectivity. A set of Mo/Si MLMs deposited on Si wafers was fabricated such that each MLM had a different Si capping layer thickness ranging form 2 nm to 7 nm. Samples from each MLM wafer were exposed to a combination of EUV light + (HC) vapors at the Advanced Light Source (ALS) synchrotron in order to determine if the Si capping layer thickness affected the carbon buildup on the MLMs. It was found that the capping layer thickness had a major influence on this 'carbonizing' tendency, with the 3 nm layer thickness providing the best initial resistance to carbonizing and accompanying EUV reflectivity loss in the MLM. The Si capping layer thickness deposited on a typical EUV optic is 4.3 nm. Measurements of the absolute reflectivities performed on the Calibration and Standards beamline at the ALS indicated the EUV reflectivity of the 3 nm-capped MLM was actually slightly higher than that of the normal, 4 nm Si-capped sample. These results show that he use of a 3 nm capping layer represents an improvement over the 4 nm layer since the 3 nm has both a higher absolute reflectivity and better initial resistance to carbon buildup. The results also support the general concept of minimizing the electric field intensity at the MLM surface to minimize photoelectron production and, correspondingly, carbon buildup in a EUV + HC vapor environment.

Microstructure and properties of an Al-Ti-Cu-Si brazing alloy for SiC-metal joining

Science.gov (United States)

Dai, Chun-duo; Ma, Rui-na; Wang, Wei; Cao, Xiao-ming; Yu, Yan

2017-05-01

An Al-Ti-Cu-Si solid-liquid dual-phase alloy that exhibits good wettability and appropriate interfacial reaction with SiC at 500-600°C was designed for SiC-metal joining. The microstructure, phases, differential thermal curves, and high-temperature wetting behavior of the alloy were analyzed using scanning electron microscopy, X-ray diffraction analysis, differential scanning calorimetry, and the sessile drop method. The experimental results show that the 76.5Al-8.5Ti-5Cu-10Si alloy is mainly composed of Al-Al2Cu and Al-Si hypoeutectic low-melting-point microstructures (493-586°C) and the high-melting-point intermetallic compound AlTiSi (840°C). The contact angle, determined by high-temperature wetting experiments, is approximately 54°. Furthermore, the wetting interface is smooth and contains no obvious defects. Metallurgical bonding at the interface is attributable to the reaction between Al and Si in the alloy and ceramic, respectively. The formation of the brittle Al4C3 phase at the interface is suppressed by the addition of 10wt% Si to the alloy.

Axial Ge/Si nanowire heterostructure tunnel FETs.

Energy Technology Data Exchange (ETDEWEB)

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01

}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt

Effect of the AlCr20 Addition on the Microstructure of Secondary AlSi7Mg0.3 Alloy

Directory of Open Access Journals (Sweden)

Bolibruchová D.

2014-06-01

Full Text Available This paper deals with influence of chrome addition and heat treatment on segregation of iron based phases in the secondary alloy AlSi7Mg0.3 microstructure by chrome and heat treatment. Iron is the most common and harmful impurity in aluminum casting alloys and has long been associated with an increase of casting defects. In generally, iron is associated with the formation of Fe-rich intermetallic phases. It is impossible to remove iron from melt by standard operations, but it is possible to eliminate its negative influence by addition some other elements that affect the segregation of intermetallics in less harmful type or by heat treatment. Realization of experiments and results of analysis show new view on solubility of iron based phases during melt preparation with higher iron content and influence of chrome as iron corrector of iron based phases.

Spent yeast as natural source of functional food additives

Science.gov (United States)

Rakowska, Rita; Sadowska, Anna; Dybkowska, Ewa; Świderski, Franciszek

Spent yeasts are by-products arising from beer and wine production which over many years have been chiefly used as feed additives for livestock. They contain many valuable and bioactive substances which has thereby generated much interest in their exploitation. Up till now, the main products obtained from beer-brewing yeasts are β-glucans and yeast extracts. Other like foodstuffs include dried brewer’s yeast, where this is dried and the bitterness removed to be fit for human consumption as well as mannan-oligosaccharides hitherto used in the feed industry. β-glucans constitute the building blocks of yeast cell walls and can thus be used in human nutrition as dietary supplements or serving as food additives in functional foods. β-glucans products obtained via post-fermentation of beer also exhibit a high and multi-faceted biological activity where they improve the blood’s lipid profile, enhance immunological status and have both prebiotic and anti-oxidant properties. Yeast extracts are currently being used more and more to enhance flavour in foodstuffs, particularly for meat and its products. Depending on how autolysis is carried out, it is possible to design extracts of various meat flavours characteristic of specific meats. Many different flavour profiles can be created which may be additionally increased in combination with vegetable extracts. Within the food market, yeast extracts can appear in various guises such as liquids, pastes or powders. They all contain significant amounts of glutamic acid, 5’-GMP and 5’-IMP nucleotides together with various amino acids and peptides that act synergistically for enhancing the flavour of foodstuff products. Recent studies have demonstrated additional benefits of yeast extracts as valuable sources of amino acids and peptides which can be used in functional foods and dietary supplements. These products possess GRAS status (Generally Recognised As Safe) which thereby also adds further as to why they should be used

The morphology of ceramic phases in B x C-SiC-Si infiltrated composites

International Nuclear Information System (INIS)

Hayun, S.; Frage, N.; Dariel, M.P.

2006-01-01

The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B 4 C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system. - Graphical abstract: Bright field TEM image of the rim area between two boron carbide grains

Interfacial mixing in as-deposited Si/Ni/Si layers analyzed by x-ray and polarized neutron reflectometry

International Nuclear Information System (INIS)

Bhattacharya, Debarati; Basu, Saibal; Singh, Surendra; Roy, Sumalay; Dev, Bhupendra Nath

2012-01-01

Highlights: ► Room temperature diffusion in Si/Ni/Si trilayer detected through complementary x-ray and polarized neutron reflectometry. ► Analyses of XPNR data generated the construction of the layered structure in terms of physical parameters along with alloy layers created by diffusion. ► Scattering length density information from XPNR provided quantitative assessment of the stoichiometry of alloys formed at the Si/Ni and Ni/Si interfaces. - Abstract: Interdiffusion occurring across the interfaces in a Si/Ni/Si layered system during deposition at room temperature was probed using x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Exploiting the complementarity of these techniques, both structural and magnetic characterization with nanometer depth resolution could be achieved. Suitable model fitting of the reflectivity profiles identified the formation of Ni–Si mixed alloy layers at the Si/Ni and Ni/Si interfaces. The physical parameters of the layered structure, including quantitative assessment of the stoichiometry of interfacial alloys, were obtained from the analyses of XRR and PNR patterns. In addition, PNR provided magnetic moment density profile as a function of depth in the stratified medium.

Interfacial mixing in as-deposited Si/Ni/Si layers analyzed by x-ray and polarized neutron reflectometry

Energy Technology Data Exchange (ETDEWEB)

Bhattacharya, Debarati, E-mail: debarati@barc.gov.in [Solid State Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Basu, Saibal; Singh, Surendra [Solid State Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Roy, Sumalay; Dev, Bhupendra Nath [Department of Materials Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S.C. Mullick Road, Jadavpur, Kolkata 700032 (India)

2012-12-15

Highlights: Black-Right-Pointing-Pointer Room temperature diffusion in Si/Ni/Si trilayer detected through complementary x-ray and polarized neutron reflectometry. Black-Right-Pointing-Pointer Analyses of XPNR data generated the construction of the layered structure in terms of physical parameters along with alloy layers created by diffusion. Black-Right-Pointing-Pointer Scattering length density information from XPNR provided quantitative assessment of the stoichiometry of alloys formed at the Si/Ni and Ni/Si interfaces. - Abstract: Interdiffusion occurring across the interfaces in a Si/Ni/Si layered system during deposition at room temperature was probed using x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Exploiting the complementarity of these techniques, both structural and magnetic characterization with nanometer depth resolution could be achieved. Suitable model fitting of the reflectivity profiles identified the formation of Ni-Si mixed alloy layers at the Si/Ni and Ni/Si interfaces. The physical parameters of the layered structure, including quantitative assessment of the stoichiometry of interfacial alloys, were obtained from the analyses of XRR and PNR patterns. In addition, PNR provided magnetic moment density profile as a function of depth in the stratified medium.

Low-temperature Au/a-Si wafer bonding

International Nuclear Information System (INIS)

Jing, Errong; Xiong, Bin; Wang, Yuelin

2011-01-01

The Si/SiO 2 /Ti/Au–Au/Ti/a-Si/SiO 2 /Si bonding structure, which can also be used for the bonding of non-silicon material, was investigated for the first time in this paper. The bond quality test showed that the bond yield, bond repeatability and average shear strength are higher for this bonding structure. The interfacial microstructure analysis indicated that the Au-induced crystallization of the amorphous silicon process leads to big Si grains extending across the bond interface and Au filling the other regions of the bond interface, which result into a strong and void-free bond interface. In addition, the Au-induced crystallization reaction leads to a change in the IR images of the bond interface. Therefore, the IR microscope can be used to evaluate and compare the different bond strengths qualitatively. Furthermore, in order to verify the superiority of the bonding structure, the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si (i.e. no Ti/Au layer on the a-Si surface) and Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structures (i.e. Au thermocompression bonding) were also investigated. For the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si bonding structure, the poor bond quality is due to the native oxide layer on the a-Si surface, and for the Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structure, the poor bond quality is caused by the wafer surface roughness which prevents intimate contact and limits the interdiffusion at the bond interface.

Electronic structure of the boron fullerene B14 and its silicon derivatives B13Si(+), B13Si(-) and B12Si2: a rationalization using a cylinder model.

Science.gov (United States)

Van Duong, Long; Nguyen, Minh Tho

2016-06-29

Geometric and electronic structures of the boron cluster B14 and its silicon derivatives B13Si(+), B13Si(-), and B12Si2 were determined using DFT calculations (TPSSh/6-311+G(d)). The B12Si2 fullerene, which is formed by substituting two B atoms at two apex positions of the B14 fullerene by two Si atoms, was also found as the global minimum structure. We demonstrated that the electronic structure and orbital configuration of these small fullerenes can be predicted by the wavefunctions of a particle on a cylinder. The early appearance of high angular node MOs in B14 and B12Si2 can be understood by this simple model. Replacement of one B atom at a top position of B14 by one Si atom, followed by the addition or removal of one electron does not lead to a global minimum fullerene structure for the anion B13Si(-) and cation B13Si(+). The early appearance of the 5σ1 orbital in B13Si(+) causes a lower stability for the fullerene-type structure.

Multi-stage En/decoders integrated in low loss Si3N4-SiO2 for incoherent spectral amplitude OCDMA on PON

NARCIS (Netherlands)

Huiszoon, B.; Leinse, Arne; Geuzebroek, D.H.; Augustin, L.M.; Klein, E.J.; de Waardt, H.; Khoe, G.D.; Koonen, A.M.J.; Emplit, Ph.; Delqué, M.; Gorza, S.-P.; Kockaert, P.; Leijtens, X

2007-01-01

In this paper, we show and analyze, for the first time, the static performance of integrated multi-stage cascade and tree spectral amplitude OCDMA en/decoders (E/Ds) which are fabricated in the low loss Si3N4–SiO2 material system. Combined with incoherent broad spectral sources these E/Ds enable

Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

Science.gov (United States)

Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

2015-11-06

We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

PIE of nuclear grade SiC/SiC flexural coupons irradiated to 10 dpa at LWR temperature

Energy Technology Data Exchange (ETDEWEB)

Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-03-01

Silicon carbide fiber-reinforced SiC matrix (SiC/SiC) composites are being actively investigated for accident-tolerant core structures of light water reactors (LWRs). Owing to the limited number of irradiation studies previously conducted at LWR-coolant temperature, this study examined SiC/SiC composites following neutron irradiation at 230–340°C to 2.0 and 11.8 dpa in the High Flux Isotope Reactor. The investigated materials are chemical vapor infiltrated (CVI) SiC/SiC composites with three different reinforcement fibers. The fiber materials were monolayer pyrolytic carbon (PyC)-coated Hi-NicalonTM Type-S (HNS), TyrannoTM SA3 (SA3), and SCS-Ultra^TM (SCS) SiC fibers. The irradiation resistance of these composites was investigated based on flexural behavior, dynamic Young’s modulus, swelling, and microstructures. There was no notable mechanical properties degradation of the irradiated HNS and SA3 SiC/SiC composites except for reduction of the Young’s moduli by up to 18%. The microstructural stability of these composites supported the absence of degradation. In addition, no progressive swelling from 2.0 to 11.8 dpa was confirmed for these composites. On the other hand, the SCS composite showed significant mechanical degradation associated with cracking within the fiber. This study determined that SiC/SiC composites with HNS or SA3 SiC/SiC fibers, a PyC interphase, and a CVI SiC matrix retain their properties beyond the lifetime dose for LWR fuel cladding at the relevant temperature.

Structure determination of the Si(001)-(2 x 1)-H reconstruction by surface X-ray diffraction: Weakening of the dimer bond by the addition of hydrogen

DEFF Research Database (Denmark)

Lauridsen, E.M.; Baker, J.; Nielsen, M.

2000-01-01

The atomic structure of the monohydride Si(001)-(2 x 1)-H reconstruction has been investigated by surface X-ray diffraction. Atomic relaxations down to the eighth layer have been determined. The bond length of the hydrogenated silicon dimers was found to be 2.47 +/- 0.02 Angstrom. which is longer...... than the dimer bond of the clean (2 x 1)-reconstructed Si(001) surface and also 5% longer than the bulk bond length of 2.35 Angstrom. The differences to the (2 x 1) structure of the clean surface are discussed in terms of the elimination of the weak pi-bond character of the dimer bond by the addition...

Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

Energy Technology Data Exchange (ETDEWEB)

Kim, H.; Glass, G.; Spila, T.; Taylor, N.; Park, S.Y.; Abelson, J.R.; Greene, J.E. [Department of Materials Science, Coordinated Science Laboratory, and Materials Research Laboratory, University of Illinois, 1101 West Springfield, Urbana, Illinois 61801 (United States)

1997-09-01

B-doped Si(001) films, with concentrations C{sub B} up to 1.7{times}10{sup 22}cm{sup {minus}3}, were grown by gas-source molecular-beam epitaxy from Si{sub 2}H{sub 6} and B{sub 2}H{sub 6} at T{sub s}=500{endash}800{degree}C. D{sub 2} temperature-programed desorption (TPD) spectra were then used to determine B coverages {theta}{sub B} as a function of C{sub B} and T{sub s}. In these measurements, as-deposited films were flash heated to desorb surface hydrogen, cooled, and exposed to atomic deuterium until saturation coverage. Strong B surface segregation was observed with surface-to-bulk B concentration ratios ranging up to 1200. TPD spectra exhibited {beta}{sub 2} and {beta}{sub 1} peaks associated with dideuteride and monodeuteride desorption as well as lower-temperature B-induced peaks {beta}{sub 2}{sup {asterisk}} and {beta}{sub 1}{sup {asterisk}}. Increasing {theta}{sub B} increased the area under {beta}{sub 2}{sup {asterisk}} and {beta}{sub 1}{sup {asterisk}} at the expense of {beta}{sub 2} and {beta}{sub 1} and decreased the total D coverage {theta}{sub D}. The TPD results were used to determine the B segregation enthalpy, {minus}0.53eV, and to explain and model the effects of high B coverages on Si(001) growth kinetics. Film deposition rates R increase by {ge}50{percent} with increasing C{sub B}{tilde {gt}}1{times}10{sup 19}cm{sup {minus}3} at T{sub s}{le}550{degree}C, due primarily to increased H desorption rates from B-backbonded Si adatoms, and decrease by corresponding amounts at T{sub s}{ge}600{degree}C due to decreased adsorption site densities. At T{sub s}{ge}700{degree}C, high B coverages also induce {l_brace}113{r_brace} facetting. {copyright} {ital 1997 American Institute of Physics.}

Evaluation of practicability of aluminosilicate additive fuel. Influence of aluminosilicate for reprocessing and corrosion of pellet

International Nuclear Information System (INIS)

Matsunaga, Junji; Kashibe, Shinji; Kinoshita, Mika; Ishimoto, Shinji; Harada, Kenichi

2014-01-01

Al-Si-O additive fuel is a modified pellet to improve the pellet-cladding interaction (PCI) resistance. This practicability assessment concerns the effect of Al-Si-O addition on the reprocessing and steam corrosion behavior. To address these concerns, a fuel dissolution test in nitric acid and a pellet corrosion test in humidified gas were carried out using the irradiated Al-Si-O additive fuel. Regardless of the Al-Si-O concentration, the dissolution rates of all Al-Si-O additive fuels were faster than that of the standard fuel. The morphology of the insoluble residue obtained from the irradiated Al-Si-O additive fuel could be considered as acceptable for retrieval by the clarification process using a conventional precipitation model. The corrosion resistance of the irradiated Al-Si-O additive fuel to high-temperature (at 1273 K) humidified gas was comparable to or better than that of the standard fuel. The result was interpreted as being due to a large grain size effect by Al-Si-O addition. (author)

Microstructure and mechanical properties of Cu-Ni-Si alloys

International Nuclear Information System (INIS)

Monzen, Ryoichi; Watanabe, Chihiro

2008-01-01

The microstructure and mechanical properties of 0.1 wt.% Mg-added and Mg-free Cu-2.0 wt.% Ni-0.5 wt.% Si alloys aged at 400 deg. C have been examined. The addition of Mg promotes the formation of disk-shaped Ni 2 Si precipitates. The Cu-Ni-Si-Mg alloy exhibits higher strength and resistance to stress relaxation than the Cu-Ni-Si alloy. The higher strength or stress relaxation resistance is attributable to the reduction in inter-precipitate spacing by the Mg addition or the drag effect of Mg atoms on dislocation motion. The Cu-Ni-Si alloy with a large grain size of 150 μm shows higher stress relaxation resistance than the alloy with a small grain size of 10 μm because of a lower density of mobile dislocations in the former alloy

Microstructure and mechanical properties of Cu-Ni-Si alloys

Energy Technology Data Exchange (ETDEWEB)

Monzen, Ryoichi [Division of Innovative Technology and Science, Graduate School of Natural Science and Technology, Kanzawa University, Kakuma-machi, Kanazawa 920-1192 (Japan)], E-mail: monzen@t.kanazawa-u.ac.jp; Watanabe, Chihiro [Division of Innovative Technology and Science, Graduate School of Natural Science and Technology, Kanzawa University, Kakuma-machi, Kanazawa 920-1192 (Japan)

2008-06-15

The microstructure and mechanical properties of 0.1 wt.% Mg-added and Mg-free Cu-2.0 wt.% Ni-0.5 wt.% Si alloys aged at 400 deg. C have been examined. The addition of Mg promotes the formation of disk-shaped Ni{sub 2}Si precipitates. The Cu-Ni-Si-Mg alloy exhibits higher strength and resistance to stress relaxation than the Cu-Ni-Si alloy. The higher strength or stress relaxation resistance is attributable to the reduction in inter-precipitate spacing by the Mg addition or the drag effect of Mg atoms on dislocation motion. The Cu-Ni-Si alloy with a large grain size of 150 {mu}m shows higher stress relaxation resistance than the alloy with a small grain size of 10 {mu}m because of a lower density of mobile dislocations in the former alloy.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

International Nuclear Information System (INIS)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-01-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

Science.gov (United States)

Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

2014-09-01

Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

Bulk Thermoelectric Materials Reinforced with SiC Whiskers

Science.gov (United States)

Akao, Takahiro; Fujiwara, Yuya; Tarui, Yuki; Onda, Tetsuhiko; Chen, Zhong-Chun

2014-06-01

SiC whiskers have been incorporated into Zn4Sb3 compound as reinforcements to overcome its extremely brittle nature. The bulk samples were prepared by either hot-extrusion or hot-pressing techniques. The obtained products containing 1 vol.% to 5 vol.% SiC whiskers were confirmed to exhibit sound appearance, high density, and fine-grained microstructure. Mechanical properties such as the hardness and fracture resistance were improved by the addition of SiC whiskers, as a result of dispersion strengthening and microstructural refinement induced by a pinning effect. Furthermore, crack deflection and/or bridging/pullout mechanisms are invoked by the whiskers. Regarding the thermoelectric properties, the Seebeck coefficient and electrical resistivity values comparable to those of the pure compound are retained over the entire range of added whisker amount. However, the thermal conductivity becomes large with increasing amount of SiC whiskers because of the much higher conductivity of SiC relative to the Zn4Sb3 matrix. This results in a remarkable degradation of the dimensionless figure of merit in the samples with addition of SiC whiskers. Therefore, the optimum amount of SiC whiskers in the Zn4Sb3 matrix should be determined by balancing the mechanical properties and thermoelectric performance.

Investigating the addition of SiO₂-CaO-ZnO-Na₂O-TiO₂ bioactive glass to hydroxyapatite: Characterization, mechanical properties and bioactivity.

Science.gov (United States)

Yatongchai, Chokchai; Placek, Lana M; Curran, Declan J; Towler, Mark R; Wren, Anthony W

2015-11-01

Hydroxyapatite (Ca10(PO4)6(OH)2) is widely investigated as an implantable material for hard tissue restoration due to its osteoconductive properties. However, hydroxyapatite in bulk form is limited as its mechanical properties are insufficient for load-bearing orthopedic applications. Attempts have been made to improve the mechanical properties of hydroxyapatite, by incorporating ceramic fillers, but the resultant composite materials require high sintering temperatures to facilitate densification, leading to the decomposition of hydroxyapatite into tricalcium phosphate, tetra-calcium phosphate and CaO phases. One method of improving the properties of hydroxyapatite is to incorporate bioactive glass particles as a second phase. These typically have lower softening points which could possibly facilitate sintering at lower temperatures. In this work, a bioactive glass (SiO2-CaO-ZnO-Na2O-TiO2) is incorporated (10, 20 and 30 wt%) into hydroxyapatite as a reinforcing phase. X-ray diffraction confirmed that no additional phases (other than hydroxyapatite) were formed at a sintering temperature of 560 ℃ with up to 30 wt% glass addition. The addition of the glass phase increased the % crystallinity and the relative density of the composites. The biaxial flexural strength increased to 36 MPa with glass addition, and there was no significant change in hardness as a function of maturation. The pH of the incubation media increased to pH 10 or 11 through glass addition, and ion release profiles determined that Si, Na and P were released from the composites. Calcium phosphate precipitation was encouraged in simulated body fluid with the incorporation of the bioactive glass phase, and cell culture testing in MC-3T3 osteoblasts determined that the composite materials did not significantly reduce cell viability. © The Author(s) 2015.

Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

Science.gov (United States)

Samanta, Piyas

2017-09-01

We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

Microstructural optimization of high temperature SiC/SiC composites by nite process

International Nuclear Information System (INIS)

Shimoda, K.; Park, J.S.; Hinoki, T.; Kohyama, A.

2007-01-01

the NITE composites at 1300 deg. C. Highly-densified matrix by NITE process could restrict the oxygen diffusion through pores and hence fiber and matrix interphase within the composites was protective against the oxidation. It is assumed that about 12% degradation in the maximum strength at 1500 deg. C for NITE composites is due to a marked mass loss (about 6%) by the active oxidation of the SiC crystallites occurred concurrently with the vaporization of the amorphous grain boundary phase which was comprised mainly of additives. (authors)

Microstructural optimization of high temperature SiC/SiC composites by nite process

Energy Technology Data Exchange (ETDEWEB)

Shimoda, K. [Kyoto Univ., Graduate School of Energy Science (Japan); Park, J.S. [Kyoto Univ., Institute of Advanced Energy (Japan); Hinoki, T.; Kohyama, A. [Kyoto Univ., lnstitute of Advanced Energy, Gokasho, Uji (Japan)

2007-07-01

the NITE composites at 1300 deg. C. Highly-densified matrix by NITE process could restrict the oxygen diffusion through pores and hence fiber and matrix interphase within the composites was protective against the oxidation. It is assumed that about 12% degradation in the maximum strength at 1500 deg. C for NITE composites is due to a marked mass loss (about 6%) by the active oxidation of the SiC crystallites occurred concurrently with the vaporization of the amorphous grain boundary phase which was comprised mainly of additives. (authors)

Effect of inclusion of SiC particulates on the mechanical resistance behaviour of stir-cast AA6063/SiC composites

International Nuclear Information System (INIS)

Balasubramanian, I.; Maheswaran, R.

2015-01-01

Highlights: • AA6063/SiC composites with different weight percent are stir cast. • Resistance properties against indentation, stretching force and sliding force are studied. • Increase in initiation of cleavage facets and reduces the tensile strength for 15% SiC. • Transition from micro ploughing to micro cutting wear mechanism is less due to SiC inclusion. - Abstract: This study investigates the mechanical resistance behaviour of AA6063 particulate composites with the inclusion of micron-sized silicon carbide (SiC) particles with different weight percentages in an AA6063 aluminium matrix. AA6063/SiC particulate composites containing 0, 5, 10, and 15 weight percent of SiC particles were produced by stir casting. Standard mechanical tests were conducted on the composite plates, and the mechanical resistance to indentation, tensile force and sliding force are evaluated. It has been observed that upon addition of SiC particles, the resistance against indentation is increased and the resistance against tensile force is initially increased and then decreased. Furthermore, using scanning electron microscopy (SEM), the fracture appearance of the broken specimen subjected to tensile force and morphological changes in the surface subjected to sliding force are analysed. The SEM images reveal that the addition of SiC particles in the AA6063 aluminium matrix initiates more cleavage facets. This leads to brittle fracture in the specimen subjected to tensile forces and less transition from material displacement to material removal in the specimen subjected to sliding forces

Application of the Raman technique to measure stress states in individual Si particles in a cast Al-Si alloy

International Nuclear Information System (INIS)

Harris, Stephen J.; O'Neill, Ann; Boileau, James; Donlon, William; Su, Xuming; Majumdar, B.S.

2007-01-01

While Raman spectroscopy is often used to measure stresses, the analyses are almost always limited to cases with simple stress states (uniaxial, equibiaxial). Recently we provided an experimental methodology to determine the full state of stress in Si wafers. Here we extend that methodology to interrogate stress states in Si particles embedded in an Al-Si alloy. Such determinations will ultimately be valuable for predicting ductility of cast Al, since a primary source of damage is cracking of eutectic Si particles. We combine electron back-scattered diffraction with the frequency shift, polarization and intensity of the Raman light to determine stress states. Stress states are measured both in the as-received residually stressed state and under in situ uniaxial loading. Comparison with finite element calculations shows good agreement. As an application of the technique, we show the determination of strength of an individual Si particle and compare the stress evolution with various models

Corrosion behavior of Si-enriched steels for nuclear applications in liquid lead–bismuth

Energy Technology Data Exchange (ETDEWEB)

Kurata, Yuji, E-mail: kurata.yuji@jaea.go.jp [Japan Atomic Energy Agency, Tokai-mura, Ibaraki-ken 319-1195 (Japan)

2013-06-15

Highlights: ► The corrosion behavior of Si-enriched steels in liquid lead–bismuth was studied. ► The corrosion tests were conducted at the two controlled oxygen levels. ► The Si addition reduces the scale thickness under the high oxygen condition. ► The Si addition has no significant effect under the low oxygen condition. -- Abstract: The corrosion behavior of Si-enriched steels in liquid lead–bismuth was studied in order to develop accelerator driven systems for transmutation of long-lived radioactive wastes and lead–bismuth cooled fast reactors. The corrosion tests of 316SS, Si-enriched 316SS, Mod.9Cr–1Mo steel (T91) and Si-enriched T91 were conducted at 550 °C in liquid lead–bismuth at the two controlled oxygen levels. Both the additions of 2.5 wt.% Si to 316SS and 1.5 wt.% Si to T91 had the effect of reducing the thickness of oxide layer in liquid lead–bismuth at the high oxygen concentration (2.5 × 10{sup −5} wt.%). Although the Si addition to 316SS reduced the depth of ferritization caused by Ni dissolution in liquid lead–bismuth at the low oxygen concentration (4.4 × 10{sup −8} wt.%), it could not suppress the ferritization and the penetration of Pb and Bi completely. The Si addition to T91 did not have the effect of preventing the penetration of Pb and Bi in the liquid lead–bismuth at the low oxygen concentration. The oxide scales formed on both Si-enriched steels did not have sufficient corrosion resistance under the low oxygen condition.

Recent progress in Si thin film technology for solar cells

Science.gov (United States)

Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

1991-11-01

Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.

The enhancement of the interdiffusion in Si/Ge amorphous artificial multilayers by additions of B and Au

International Nuclear Information System (INIS)

Park, B.; Spaepen, F.; Poate, J.M.; Jacobson, D.C.

1990-01-01

Amorphous Si/amorphous Ge artificial multilayers were prepared by ion beam sputtering. Boron or gold impurities were introduced into the Si/Ge multilayers by ion implantation or during the sputtering deposition. Diffusion coefficients were determined by measuring the decrease in the intensity of the first order X-ray diffraction peak resulting from the composition modulation. It was found that the interdiffusion of Si and Ge in their amorphous phase can be enhanced by doping. The enhancement factor is independent of the degree of structural relaxation, as observed by the decrease of diffusivity with annealing time, of the amorphous phase. A model is proposed that describes this behavior in terms of electronic effects, introduced by the dopants, on the pre-existing structural defects governing diffusion

Technique development for modulus, microcracking, hermeticity, and coating evaluation capability characterization of SiC/SiC tubes

Energy Technology Data Exchange (ETDEWEB)

Hu, Xunxiang [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Ang, Caen K. [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Katoh, Yutai [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

2016-08-01

Driven by the need to enlarge the safety margins of nuclear fission reactors in accident scenarios, research and development of accident-tolerant fuel has become an important topic in the nuclear engineering and materials community. A continuous-fiber SiC/SiC composite is under consideration as a replacement for traditional zirconium alloy cladding owing to its high-temperature stability, chemical inertness, and exceptional irradiation resistance. An important task is the development of characterization techniques for SiC/SiC cladding, since traditional work using rectangular bars or disks cannot directly provide useful information on the properties of SiC/SiC composite tubes for fuel cladding applications. At Oak Ridge National Laboratory, experimental capabilities are under development to characterize the modulus, microcracking, and hermeticity of as-fabricated, as-irradiated SiC/SiC composite tubes. Resonant ultrasound spectroscopy has been validated as a promising technique to evaluate the elastic properties of SiC/SiC composite tubes and microcracking within the material. A similar technique, impulse excitation, is efficient in determining the basic mechanical properties of SiC bars prepared by chemical vapor deposition; it also has potential for application in studying the mechanical properties of SiC/SiC composite tubes. Complete evaluation of the quality of the developed coatings, a major mitigation strategy against gas permeation and hydrothermal corrosion, requires the deployment of various experimental techniques, such as scratch indentation, tensile pulling-off tests, and scanning electron microscopy. In addition, a comprehensive permeation test station is being established to assess the hermeticity of SiC/SiC composite tubes and to determine the H/D/He permeability of SiC/SiC composites. This report summarizes the current status of the development of these experimental capabilities.

Single-source-precursor Synthesis and High-temperature Behavior of SiC Ceramics Containing Boron

Science.gov (United States)

Gui, Miaomiao; Fang, Yunhui; Yu, Zhaoju

2014-12-01

In this paper, a hyperbranched polyborocarbosilane (HPBCS) was prepared by a one-pot synthesis with Cl2Si(CH3)CH2Cl, Cl3SiCH2Cl and BCl3 as the starting materials. The obtained HPBCS was characterized by GPC, FT-IR and NMR, and was confirmed to have hyperbranched structures. The thermal property of the resulting HPBCS was investigated by TGA. The ceramic yield of the HPBCS is about 84% and that of the counterpart hyperbranched hydridopolycarbosilane is only 45%, indicating that the introduction of boron into the preceramic polymer significantly improved the ceramic yield. With the polymer-derived ceramic route, the final ceramics were annealed at 1800 °C in argon atmosphere for 2 h in order to characterize the microstructure and to evaluate the high-temperature behavior. The final ceramic microstructure was studied by XRD and SEM, indicating that the introduction of boron dramatically inhibits SiC crystallization. The boron-containing SiC ceramic shows excellent high-temperature behavior against decomposition and crystallization at 1800 °C.

MeV ion irradiation effects on the luminescence properties of Si-implanted SiO{sub 2}-thin films

Energy Technology Data Exchange (ETDEWEB)

Chulapakorn, T.; Primetzhofer, D. [Uppsala University, Department of Physics and Astronomy, P.O. Box 516, 751 20 Uppsala (Sweden); Sychugov, I.; Suvanam, S.S.; Linnros, J.; Hallen, A. [Royal Institute of Technology (KTH), School of Information and Communication Technology, P.O. Box Electrum 229, 164 40 Kista (Sweden)

2016-12-15

The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO{sub 2} by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (λ) and decay lifetime (τ), two PL sources are distinguished: (i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (λ > 720 nm, τ ∝ μs), and (ii) fast-decay PL, possibly due to oxide-related defects (λ ∝ 575-690 nm, τ ∝ ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Numerical investigation of FAST powder consolidation of Al2O3 and additive free β-SiC

International Nuclear Information System (INIS)

Allen, J B; Cornwell, C F; Carlson, T; Marsh, C P

2015-01-01

In this work we examine ceramic synthesis through powder consolidation and the field assisted sintering technique. In particular, we investigate the sintering of Al 2 O 3 and additive free β−SiC from both an experimental and numerical perspective. For the numerical model, the continuum theory of sintering model is employed, and the densification mechanisms corresponding to power law creep and grain boundary diffusion are considered. Experiments are used for comparison and validation purposes. The results indicate that in general, the densification kinetics simulated by the numerical model compare favorably with the experimental results. Parametric studies involving initial grain size, heating rate, and applied stress are also examined using the numerical model, and confirm many of the expected results from previous research, including increased densification due to higher heating rates, smaller grain sizes, and increased applied loading conditions. (paper)

Preparation of anti-oxidative SiC/SiO2 coating on carbon fibers from vinyltriethoxysilane by sol–gel method

International Nuclear Information System (INIS)

Xia Kedong; Lu Chunxiang; Yang Yu

2013-01-01

Highlights: ► The SiC/SiO 2 coating was prepared on carbon fibers by the sol–gel method. ► Nano-crystallites with an average diameter of 130 nm were aligned along the fiber axis uniformly. ► The oxidation resistant property of coated carbon fiber was increased with the increase of sol concentration and the heat treatment temperature. ► The oxidation activation energy of the coated carbon fiber was increased by 23% in comparison with uncoated carbon fiber. - Abstract: The anti-oxidative SiC/SiO 2 coating was prepared on carbon fibers by a sol–gel process using vinyltriethoxysilane (VTES) as the single source precursor. The derived coating was characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The oxidation resistant properties of the carbon fiber with and without coating were studied by isothermal oxidation. The results indicated that the carbothermal reduction reaction led to the decrease of SiO 2 phase and the increase of SiC phase at 1500 °C. The uniform SiC/SiO 2 coating prepared from a sol concentration of 4 wt% and heat treated at 1500 °C showed the optimal oxidation resistant property. The oxidation resistance of the carbon fiber was improved by the SiC/SiO 2 coating, and the oxidation activation energy was increased by about 23% as compared with uncoated carbon fiber.

Anisotropy in elastic properties of TiSi2 (C49, C40 and C54), TiSi and Ti5Si3: an ab-initio density functional study

International Nuclear Information System (INIS)

Niranjan, Manish K

2015-01-01

We present a comparative study of the anisotropy in the elastic properties of the C49, C54 and C40 phases of TiSi 2 , as well as orthorhombic TiSi and hexagonal Ti 5 Si 3 . The elastic constants, elastic moduli, Debye temperature and sound velocities are computed within the framework of density functional theory. The computed values of the elastic constants and moduli are found to be in excellent agreement with available experimental values. The average elastic moduli, such as Young’s modulus, shear modulus, bulk modulus and Poisson’s ratio, of polycrystalline aggregates are computed using the computed elastic constants of single crystals. The anisotropy in elastic properties is analyzed using estimates of shear anisotropic factors, bulk modulus anisotropic factors and variations in Young’s and bulk moduli in different crystallographic directions. Among the Ti–Si phases, the computed directional Young’s modulus profiles of C49 TiSi 2 and C40 TiSi 2 are found to be quite similar to those of bulk Si and Ti, respectively. In addition to the elastic properties, the electronic structure of five Ti–Si phases is studied. The density of states and planar charge density profiles reveal mixed covalent–metallic bonding in all Ti–Si phases. (paper)

Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

International Nuclear Information System (INIS)

Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

1990-01-01

Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

Structural and magnetic study of mechanically deformed Fe rich FeAlSi ternary alloys

International Nuclear Information System (INIS)

Legarra, E.; Apiñaniz, E.; Plazaola, F.

2012-01-01

Highlights: ► Addition of Si to binary Fe–Al alloys makes the disordering more difficult. ► Si addition opposes the large volume increase found in FeAl alloys with deformation. ► Disordering induces a redistribution of non-ferrous atoms around Fe atoms in Fe 75 Al 25−x Si x and Fe 70 Al 30−x Si x . ► Addition of Si to binary Fe 75 Al 25 and Fe 70 Al 30 alloys opposes the magnetic behavior induced by Al in the magnetism of Fe. ► Si inhibits the para-ferro transition found in Fe 60 Al 40 alloy with disordering. - Abstract: In this work we study systematically the influence of different Al/Si ratios on the magnetic and structural properties of mechanically disordered powder Fe 75 Al 25−x Si x , Fe 70 Al 30−x Si x and Fe 60 Al 40−x Si x alloys by means of Mössbauer spectroscopy, X-ray diffraction and magnetic measurements. In order to obtain different stages of disorder the alloys were deformed by different methods: crushing induction melted alloys and ball milling annealed (ordered) alloys using different number of balls and speed. X-ray and Mössbauer data show that mechanical deformation induces the disordered A2 structure in these alloys. The results indicate that addition of Si to binary Fe–Al alloys makes the disordering more difficult. In addition, X-ray diffraction patterns show that the normalized lattice parameter variation of the disordered alloys of each composition decreases monotonically with Si content, indicating clearly that Si addition opposes the large volume increase found in FeAl alloys with deformation. The study of the hyperfine fields indicates that there is a redistribution of non-ferrous atoms around Fe atoms with the disordering; indeed, there is an inversion of the behavior of the hyperfine field of the Fe atoms. On the other hand, the magnetic measurements indicate that addition of Si to binary Fe 75 Al 25 and Fe 70 Al 30 alloys opposes the magnetic behavior induced by Al in the magnetism of Fe.

Use of thermodynamic calculation to predict the effect of Si on the ageing behavior of Al-Mg-Si-Cu alloys

International Nuclear Information System (INIS)

Ji, Yanli; Zhong, Hao; Hu, Ping; Guo, Fuan

2011-01-01

Research highlights: → Thermodynamic calculation can predict the ageing behavior of 6xxx alloys. → The hardness level of the alloys depends on the Si content in as-quenched matrix. → The precipitation strengthening effect depends on the Mg 2 Si level of the alloys. -- Abstract: Thermodynamic calculation was employed to predict the influence of Si content on the ageing behavior of Al-Mg-Si-Cu alloys. In addition, experiments were carried out to verify the predictions. The results show that thermodynamic calculation can predict the effect of Si content on the ageing behavior of the studied alloys. This study further proposes that the hardness level of alloys during ageing is directly related to the Si content in the as-quenched supersaturated solution, while the precipitation strengthening effect is directly related to the Mg 2 Si level of the alloys.

Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

International Nuclear Information System (INIS)

Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

1997-01-01