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Sample records for additive si source

  1. Formation of AlFeSi phase in AlSi12 alloy with Ce addition

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    S. Kores

    2012-04-01

    Full Text Available The influence of cerium addition on the solidification sequence and microstructure constituents of the Al-Si alloys with 12,6 mass % Si was examined. The solidification was analyzed by a simple thermal analysis. The microstructures were examined with conventional light and scanning electron microscopy. Ternary AlSiCe phase was formed in the Al-Si alloys with added cerium during the solidification process. AlSiCe and β-AlFeSi phases solidified together in the region that solidified the last. Cerium addition influenced on the morphology of the α-AlFeSi phase solidification.

  2. Pressureless sintering of dense Si3N4 and Si3N4/SiC composites with nitrate additives

    International Nuclear Information System (INIS)

    Kim, J.Y.; Iseki, Takayoshi; Yano, Toyohiko

    1996-01-01

    The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si 3 N 4 and a Si 3 N 4 /SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si 3 N 4 particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si 3 N 4 particles milled with oxide additives. Monolithic Si 3 N 4 could be sintered to 94% of theoretical density (TD) at 1,500 C with nitrate additives. The sintering temperature was about 100 C lower than the case with oxide additives. After pressureless sintering at 1,750 C for 2 h in N 2 , the bulk density of a Si 3 N 4 /20 wt% SiC composite reached 95% TD with nitrate additives

  3. EFFECT OF THE Si POWDER ADDITIONS ON THE PROPERTIES OF SiC COMPOSITES

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    GUOGANG XU

    2012-09-01

    Full Text Available By means of transient plastic phase process, the SiC silicon carbide kiln furniture materials were produced through adding Si powder to SiC materials. At the condition of the same additions of SiO2 powder, the effect of the Si powder additions on properties of silicon carbide materials after sintered at 1450°C for 3 h in air atmosphere was studied by means of SEM and other analysis methods. The results showed that silicon powder contributes to both sintering by liquid state and plastic phase combination to improve the strength of samples. When the Si powder additions is lower than 3.5 %, the density and strength of samples increase and porosity decrease with increasing Si powder additions. However when the Si powder additions is higher than 3.5 %, the density and strength of samples decrease and porosity increase with increasing Si powder additions. With increasing of Si additions, the residual strength of sample after thermal shocked increased and linear change rate decreased, and get to boundary value when Si additions is 4.5 %. The results also indicated that at the same sintering temperature, the sample with 3.5 % silicon powder has maximum strength.

  4. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

    2016-08-15

    Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  5. Ni-Si oxide as an inducing crystallization source for making poly-Si

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    Meng, Zhiguo; Liu, Zhaojun; Li, Juan; Wu, Chunya; Xiong, Shaozhen [Institute of Photo-electronics, Nankai University, Tianjin (China); Zhao, Shuyun; Wong, Man; Kwok, Hoi Sing [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China)

    2010-04-15

    Nickel silicon oxide mixture was sputtered on a-Si with Ni-Si alloy target with Ni:Si weight ratio of 1:9 and used as a new inducing source for metal induced lateral crystallization (MILC). The characteristics of the resulted poly-Si materials induced by Ni-Si oxide with different thickness were nearly the same. This means the metal induced crystallization with this new inducing source has wide processing tolerance to make MILC poly-Si. Besides, it reduced the residual Ni content in the resulted poly-Si film. The transfer characteristic curve of poly-Si TFT and a TFT-OLED display demo made with this kind of new inducing source were also presented in this paper. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Scalable Production of Si Nanoparticles Directly from Low Grade Sources for Lithium-Ion Battery Anode.

    Science.gov (United States)

    Zhu, Bin; Jin, Yan; Tan, Yingling; Zong, Linqi; Hu, Yue; Chen, Lei; Chen, Yanbin; Zhang, Qiao; Zhu, Jia

    2015-09-09

    Silicon, one of the most promising candidates as lithium-ion battery anode, has attracted much attention due to its high theoretical capacity, abundant existence, and mature infrastructure. Recently, Si nanostructures-based lithium-ion battery anode, with sophisticated structure designs and process development, has made significant progress. However, low cost and scalable processes to produce these Si nanostructures remained as a challenge, which limits the widespread applications. Herein, we demonstrate that Si nanoparticles with controlled size can be massively produced directly from low grade Si sources through a scalable high energy mechanical milling process. In addition, we systematically studied Si nanoparticles produced from two major low grade Si sources, metallurgical silicon (∼99 wt % Si, $1/kg) and ferrosilicon (∼83 wt % Si, $0.6/kg). It is found that nanoparticles produced from ferrosilicon sources contain FeSi2, which can serve as a buffer layer to alleviate the mechanical fractures of volume expansion, whereas nanoparticles from metallurgical Si sources have higher capacity and better kinetic properties because of higher purity and better electronic transport properties. Ferrosilicon nanoparticles and metallurgical Si nanoparticles demonstrate over 100 stable deep cycling after carbon coating with the reversible capacities of 1360 mAh g(-1) and 1205 mAh g(-1), respectively. Therefore, our approach provides a new strategy for cost-effective, energy-efficient, large scale synthesis of functional Si electrode materials.

  7. Effects of sintering additives on the microstructural and mechanical properties of the ion-irradiated SiCf/SiC

    Science.gov (United States)

    Fitriani, Pipit; Sharma, Amit Siddharth; Yoon, Dang-Hyok

    2018-05-01

    SiCf/SiC composites containing three different types of sintering additives viz. Sc-nitrate, Al2O3-Sc2O3, and Al2O3-Y2O3, were subjected to ion irradiation using 0.2 MeV H+ ions with a fluence of 3 × 1020 ions/m2 at room temperature. Although all composites showed volumetric swelling upon ion irradiation, SiCf/SiC with Sc-nitrate showed the smallest change followed by those with the Al2O3-Sc2O3 and Al2O3-Y2O3 additives. In particular, SiCf/SiC containing the conventional Al2O3-Y2O3 additive revealed significant microstructural changes, such as surface roughening and the formation of cracks and voids, resulting in reduced fiber pullout upon irradiation. On the other hand, the SiCf/SiC with Sc-nitrate showed the highest resistance against ion irradiation without showing any macroscopic changes in surface morphology and mechanical strength, indicating the importance of the sintering additive in NITE-based SiCf/SiC for nuclear structural applications.

  8. Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

    Science.gov (United States)

    Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

    2013-05-01

    We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

  9. Effect of SiO2 addition and gamma irradiation on the lithium borate glasses

    Science.gov (United States)

    Raut, A. P.; Deshpande, V. K.

    2018-01-01

    The physical properties like density, glass transition temperature (Tg), and ionic conductivity of lithium borate (LB) glasses with SiO2 addition were measured before and after gamma irradiation. Remarkable changes in properties have been obtained in the physical properties of LB glasses with SiO2 addition and after gamma irradiation. The increase in density and glass transition temperature of LB glasses with SiO2 addition has been explained with the help of increase in density of cross linking due to SiO4 tetrahedra formation. The increase in ionic conductivity with SiO2 addition was explained with the help of ‘mixed glass former effect’. The increase in density and Tg of LB glasses with SiO2 addition after gamma irradiation has been attributed to fragmentation of bigger ring structure into smaller rings, which increases the density of cross linking and hence compaction. The exposure of gamma irradiation has lead to decrease in ionic conductivity of LB glasses with SiO2 addition. The atomic displacement caused by gamma irradiation resulted in filling of interstices and decrease in trapping sites. This explains the obtained decrease in ionic conductivity after gamma irradiation of glasses. The obtained results of effect of SiO2 addition and gamma irradiation on the density, Tg and ionic conductivity has been supported by FTIR results.

  10. Alternative current source based Schottky contact with additional electric field

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2017-07-01

    Additional electric field (AEF) in the Schottky contacts (SC) that covered the peripheral contact region wide and the complete contact region narrow (as TMBS diode) SC. Under the influence of AEF is a redistribution of free electrons produced at certain temperatures of the semiconductor, and is formed the space charge region (SCR). As a result of the superposition of the electric fields SCR and AEF occurs the resulting electric field (REF). The REF is distributed along a straight line perpendicular to the contact surface, so that its intensity (and potential) has a minimum value on the metal surface and the maximum value at a great distance from the metal surface deep into the SCR. Under the influence of AEF as a sided force the metal becomes negative pole and semiconductor - positive pole, therefore, SC with AEF becomes an alternative current source (ACS). The Ni-nSi SC with different diameters (20-1000 μm) under the influence of the AEF as sided force have become ACS with electromotive force in the order of 0.1-1.0 mV, which are generated the electric current in the range of 10-9-10-7 A, flowing through the external resistance 1000 Ohm.

  11. Effect of Si3N4 Addition on Oxidation Resistance of ZrB2-SiC Composites

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    Manab Mallik

    2017-06-01

    Full Text Available The oxidation behavior of ZrB2-20 vol % SiC and ZrB2-20 vol % SiC-5 vol % Si3N4 composites prepared by hot-pressing and subjected to isothermal exposure at 1200 or 1300 °C for durations of 24 or 100 h in air, as well as cyclic exposure at 1300 °C for 24 h, have been investigated. The oxidation resistance of the ZrB2-20 vol % SiC composite has been found to improve by around 20%–25% with addition of 5 vol % Si3N4 during isothermal or cyclic exposures at 1200 or 1300 °C. This improvement in oxidation resistance has been attributed to the formation of higher amounts of SiO2 and Si2N2O, as well as a greater amount of continuity in the oxide scale, because these phases assist in closing the pores and lower the severity of cracking by exhibiting self-healing type behavior. For both the composites, the mass changes are found to be higher during cyclic exposure at 1300 °C by about 2 times compared to that under isothermal conditions.

  12. Effects of boron addition on the formation of MoSi2 by combustion synthesis mode

    International Nuclear Information System (INIS)

    Feng Peizhong; Wu Jie; Islam, S.H.; Liu Weisheng; Niu Jinan; Wang Xiaohong; Qiang Yinghuai

    2010-01-01

    The combustion synthesis behavior of Mo-Si-B powder was investigated. Test specimens with nominal compositions including MoSi 2 , Mo(Si 0.975 B 0.025 ) 2 , Mo(Si 0.95 B 0.05 ) 2 , Mo(Si 0.925 B 0.075 ) 2 and Mo(Si 0.9 B 0.1 ) 2 were employed. The combustion mode, propagation velocity of combustion wave, combustion temperature and combustion product structure were studied. The results showed that the combustion wave propagated along a spiral trajectory till reaching the bottom of the compacts. The combustion temperature was increased by the addition of boron, to as high as 1922 K in the case of the Mo(Si 0.95 B 0.05 ) 2 sample. However, the flame-front propagation velocity decreased as a result of the addition of boron. The X-ray diffraction results showed that the combustion products of the Mo(Si 0.975 B 0.025 ) 2 and Mo(Si 0.9 B 0.1 ) 2 samples were composed of MoSi 2 with minor MoB. Those of the Mo(Si 0.95 B 0.05 ) 2 and Mo(Si 0.925 B 0.075 ) 2 samples were composed of MoSi 2 with minor MoB and MoB 2 . And traces of Mo 2 B 5 were identified in the Mo(Si 0.95 B 0.05 ) 2 sample.

  13. Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

    Energy Technology Data Exchange (ETDEWEB)

    Bantaculo, Rolando, E-mail: rolandobantaculo@yahoo.com; Saitoh, Eiji; Miyamoto, Yu; Handa, Hiroyuki; Suemitsu, Maki

    2011-11-01

    A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH{sub 3}-CH{sub 3}) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si{sub 2}H{sub 6}) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.

  14. Study of Ni/Si(1 0 0) solid-state reaction with Al addition

    International Nuclear Information System (INIS)

    Huang Yifei; Jiang Yulong; Ru Guoping; Li Bingzong

    2008-01-01

    The characteristics of Ni/Si(1 0 0) solid-state reaction with Al addition (Ni/Al/Si(1 0 0), Ni/Al/Ni/Si(1 0 0) and Al/Ni/Si(1 0 0)) is studied. Ni and Al films were deposited on Si(1 0 0) substrate by ion beam sputtering. The solid-state reaction between metal films and Si was performed by rapid thermal annealing. The sheet resistance of the formed silicide film was measured by four-point probe method. The X-ray diffraction (XRD) was employed to detect the phases in the silicide film. The Auger electron spectroscopy was applied to reveal the element profiles in depth. The influence of Al addition on the Schottky barrier heights of the formed silicide/Si diodes was investigated by current-voltage measurements. The experimental results show that NiSi forms even with the addition of Al, although the formation temperature correspondingly changes. It is revealed that Ni silicidation is accompanied with Al diffusion in Ni film toward the film top surface and Al is the dominant diffusion species in Ni/Al system. However, no Ni x Al y phase is detected in the films and no significant Schottky barrier height modulation by the addition of Al is observed

  15. Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(0 0 1)

    International Nuclear Information System (INIS)

    Huang, Shih-Hsien; Twan, Sheng-Chen; Cheng, Shao-Liang; Lee, Tu; Hu, Jung-Chih; Chen, Lien-Tai; Lee, Sheng-Wei

    2014-01-01

    Highlights: ► The presence of Al slows down the Ni 2 Si–NiSi phase transformation but significantly promotes the NiSi 2−x Al x formation. ► The behavior of phase transformation strongly depends on the Al concentration of the initial Ni 1−x Al x alloys. ► The Ni 0.91 Al 0.09 /Si system exhibits remarkably improved thermal stability, even after high temperature annealing for 1000 s. ► The relationship between microstructures, electrical property, and thermal stability of Ni(Al) silicides is discussed. -- Abstract: The influence of Al addition on the phase transformation and thermal stability of Ni silicides on (0 0 1)Si has been systematically investigated. The presence of Al atoms is found to slow down the Ni 2 Si–NiSi phase transformation but significantly promote the NiSi 2−x Al x formation during annealing. The behavior of phase transformation strongly depends on the Al concentration of the initial Ni 1−x Al x alloys. Compared to the Ni 0.95 Pt 0.05 /Si and Ni 0.95 Al 0.05 /Si system, the Ni 0.91 Al 0.09 /Si sample exhibits remarkably enhanced thermal stability, even after high temperature annealing for 1000 s. The relationship between microstructures, electrical property, and thermal stability of Ni silicides is discussed to elucidate the role of Al during the Ni 1−x Al x alloy silicidation. This work demonstrated that thermally stable Ni 1−x Al x alloy silicides would be a promising candidate as source/drain (S/D) contacts in advanced complementary metal–oxide-semiconductor (CMOS) devices

  16. Effect of ternary additions on the oxidation resistance of Ti5Si3

    International Nuclear Information System (INIS)

    Thom, A.J.; Akinc, M.; Iowa State Univ., Ames, IA

    1995-01-01

    Refractory intermetallic silicides are receiving increasing consideration for use as high temperature structural materials. Ti 5 Si 3 -based compositions are attractive due to their ability to incorporate a variety of interstitial ternary additions. These ternary additions present a unique opportunity to potentially tailor physical properties. Previous experimental work has shown that these additions significantly increase the otherwise poor oxidation resistance of undoped Ti 5 Si 3 above 700 C. Recent experimental work by the authors on the oxidation of small atom doped Ti 5 Si 3 is discussed. Interstitial additions of boron, carbon, and oxygen substantially improve the isothermal oxidation resistance of Ti 5 Si 3 at 1,000 C. In contrast, added nitrogen does not provide significant improvement. Even up to 1,306 C, interstitial oxygen imparts excellent oxidation resistance with a mass gain of 1.1 mg/cm 2 after 240 hours

  17. Low silicon U(Al,Si)3 stabilization by Zr addition

    International Nuclear Information System (INIS)

    Pizarro, L.M.; Alonso, P.R.; Rubiolo, G.H.

    2009-01-01

    Previous knowledge states that (U,Zr)Al 3 and U(Al,Si) 3 phases with Zr and Si content higher than 6 at.% (7.7 wt%) and 4 at.% (1.4 wt%), respectively, does not partially transform to UAl 4 at 600 o C. In this work, four alloys within the quaternary system U-Al-Si-Zr were made with a fixed nominal 0.18 at.% (0.1 wt%) Si content in order to assess the synergetic effect of both Zr and Si alloying elements to the thermodynamic stability of the (U,Zr)(Al,Si) 3 phase. Heat treatments at 600 deg. C were undertaken and samples were analyzed by means of XRD, EPMA and EDS techniques. A remarkable conclusion is that addition of 0.3 at.% Si in the (U,Zr)(Al,Si) 3 phase reduces in 2.7 at.% the necessary Zr content to inhibit its transformation to U(Al,Si) 4 .

  18. Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

    Science.gov (United States)

    Halbig, Michael Charles; Singh, Mrityunjay

    2015-01-01

    Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

  19. Effects of La and Ce Addition on the Modification of Al-Si Based Alloys

    Directory of Open Access Journals (Sweden)

    Emad M. Elgallad

    2016-01-01

    Full Text Available This study focuses on the effects of the addition of rare earth metals (mainly lanthanum and cerium on the eutectic Si characteristics in Al-Si based alloys. Based on the solidification curves and microstructural examination of the corresponding alloys, it was found that addition of La or Ce increases the alloy melting temperature and the Al-Si eutectic temperature, with an Al-Si recalescence of 2-3°C, and the appearance of post-α-Al peaks attributed to precipitation of rare earth intermetallics. Addition of La or Ce to Al-(7–13% Si causes only partial modification of the eutectic Si particles. Lanthanum has a high affinity to react with Sr, which weakens the modification efficiency of the latter. Cerium, however, has a high affinity for Ti, forming a large amount of sludge. Due to the large difference in the length of the eutectic Si particles in the same sample, the normal use of standard deviation in this case is meaningless.

  20. An electrostatic Si e-gun and a high temperature elemental B source for Si heteroepitaxial growth

    Science.gov (United States)

    Scarinci, F.; Casella, A.; Lagomarsino, S.; Fiordelisi, M.; Strappaveccia, P.; Gambacorti, N.; Grimaldi, M. G.; Xue, LiYing

    1996-08-01

    In this paper we present two kind of sources used in Si MBE growth: a Si source where an electron beam is electrostatically deflected onto a Si rod and a high temperature B source to be used for p-doping. Both sources have been designed and constructed at IESS. The Si source is constituted of a Si rod mounted on a 3/4″ flange with high-voltage connector. A W filament held at high voltage (up to 2000 V) is heated by direct current. Electrons from the filament are electrostatically focused onto the Si rod which is grounded. This mounting allows a minimum heating dispersion and no contamination, because the only hot objects are the Si rod and the W filament which is mounted in such a way that it cannot see the substrate. Growth rates of 10 Å/min on a substrate at 20 cm from the source have been measured. Auger and LEED have shown no contamination. The B source is constituted of a graphite block heated by direct current. A pyrolitic graphite crucible put in the graphite heater contains the elemental B. The cell is water cooled and contains Ta screens to avoid heat dispersion. It has been tested up to a temperature of 1700°C. P-doped Si 1- xGe x layers have been grown and B concentration has been measured by SIMS. A good control and reproducibility has been attained.

  1. Transflective multiplexing of holographic polymer dispersed liquid crystal using Si additives

    Directory of Open Access Journals (Sweden)

    2011-01-01

    Full Text Available Morphology, grating formation dynamics and electro-optical performance of transflective multiplexing with holographic polymer dispersed liquid crystal (HPDLC were investigated in the presence of silica nanoparticles (Aerosil R812 (RS and modified Aerosil 200 (MS and silicon monomer (vinyltrimethoxy silane (VTMS by using three coherent laser beams. The addition of Si additive significantly augmented the diffraction efficiencies of transmission and reflection gratings due to the enhanced phase separation with large LC channels. The film was driven only with Si additives which are enriched at the polymer-LC interfaces. As the additive content increased, driving voltage decreased to a minimum of 30 V at 2.0 wt% VTMS. It was found that the interface modification and large droplet size are crucial to operate the film. Among the three types of Si additive, VTMS showed the highest electro-optical performance due to its low viscosity and high reactivity.

  2. Effects of Mn addition on microstructure and hardness of Al-12.6Si alloy

    Science.gov (United States)

    Biswas, Prosanta; Patra, Surajit; Mondal, Manas Kumar

    2018-03-01

    In this work, eutectic Al-12.6Si alloy with and without manganese (Mn) have been developed through gravity casting route. The effect of Mn concentration (0.0 wt.%, 1 wt%, 2 wt% and 3 wt%) on microstructural morphology and hardness property of the alloy has been investigated. The eutectic Al-12.6 Si alloy exhibits the presence of combine plate, needle and rod-like eutectic silicon phase with very sharp corners and coarser primary silicon particles within the α-Al phase. In addition of 1wt.% of Mn in the eutectic Al-12.6Si alloy, sharp corners of the primary Si and needle-like eutectic Si are became blunt and particles size is reduced. Further, increase in Mn concentration (2.0 wt.%) in the Al-12.6Si alloy, irregular plate shape Al6(Mn,Fe) intermetallics are formed inside the α-Al phase, but the primary and eutectic phase morphology is similar to the eutectic Al-12.6Si alloy. The volume fraction of Al6(Mn,Fe) increases and Al6(Mn,Fe) particles appear as like chain structure in the alloy with 3 wt.% Mn. An increase in Mn concentration in the Al-12.6Si alloys result in the increase in bulk hardness of the alloy as an effects of microstructure modification as well as the presence of harder Al6(Mn,Fe) phase in the developed alloy.

  3. Additive manufacturing of Ti-Si-N ceramic coatings on titanium

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yanning; Sahasrabudhe, Himanshu; Bandyopadhyay, Amit, E-mail: amitband@wsu.edu

    2015-08-15

    Highlights: • 3D Printing or additive manufacturing of hard Ti-Si-N based ceramics coating on Ti metal substrate. • Understanding of phase transformation as a function of compositional variation. • Evaluation of influence of processing parameters and composition on wear resistance. - Abstract: In this study, Laser Engineered Net Shaping (LENS{sup TM}) was employed towards Additive Manufacturing/3D Printing of Ti-Si-N coatings with three different Ti-Si ratios on commercially pure titanium (cp-Ti) substrate. Microstructural analysis, phase analysis using X-ray diffraction, wear resistance and hardness measurements were done on LENS™ processed 3D printed coatings. Coatings showed graded microstructures and in situ formed phases. Results showed that microstructural variations and phase changes influence coating's hardness and wear resistance directly. High hardness values were obtained from all samples’ top surface where the hardness of coatings can be ranked as 90% Ti-10% Si-N coating (2093.67 ± 144 HV{sub 0.2}) > 100% Ti-N coating (1846 ± 68.5 HV{sub 0.2}) > 75% Ti-25% Si-N coating (1375.3 ± 61.4 HV{sub 0.2}). However, wear resistance was more dependent on inherent Si content, and samples with higher Si content showed better wear resistance.

  4. Additive manufacturing of Ti-Si-N ceramic coatings on titanium

    International Nuclear Information System (INIS)

    Zhang, Yanning; Sahasrabudhe, Himanshu; Bandyopadhyay, Amit

    2015-01-01

    Highlights: • 3D Printing or additive manufacturing of hard Ti-Si-N based ceramics coating on Ti metal substrate. • Understanding of phase transformation as a function of compositional variation. • Evaluation of influence of processing parameters and composition on wear resistance. - Abstract: In this study, Laser Engineered Net Shaping (LENS TM ) was employed towards Additive Manufacturing/3D Printing of Ti-Si-N coatings with three different Ti-Si ratios on commercially pure titanium (cp-Ti) substrate. Microstructural analysis, phase analysis using X-ray diffraction, wear resistance and hardness measurements were done on LENS™ processed 3D printed coatings. Coatings showed graded microstructures and in situ formed phases. Results showed that microstructural variations and phase changes influence coating's hardness and wear resistance directly. High hardness values were obtained from all samples’ top surface where the hardness of coatings can be ranked as 90% Ti-10% Si-N coating (2093.67 ± 144 HV 0.2 ) > 100% Ti-N coating (1846 ± 68.5 HV 0.2 ) > 75% Ti-25% Si-N coating (1375.3 ± 61.4 HV 0.2 ). However, wear resistance was more dependent on inherent Si content, and samples with higher Si content showed better wear resistance

  5. Glass forming ability of Al–Ni–La alloys with Si addition

    Energy Technology Data Exchange (ETDEWEB)

    Yi, J.J.; Xiong, X.Z. [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Inoue, A. [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); WPI-Advanced Institute for Material Research, Tohoku University, Sendai 980-8577 (Japan); Kong, L.T. [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Li, J.F., E-mail: jfli@sjtu.edu.cn [State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)

    2015-11-25

    (Al{sub 85.5}Ni{sub 9.5}La{sub 5}){sub 100−x}Si{sub x}, (Al{sub 86}Ni{sub 9}La{sub 5}){sub 100−x}Si{sub x}, (Al{sub 86}Ni{sub 9.5}La{sub 4.5}){sub 100−x}Si{sub x}, (Al{sub 86}Ni{sub 10}La{sub 4}){sub 100−x}Si{sub x} and (Al{sub 86}Ni{sub 10.5}La{sub 3.5}){sub 100−x}Si{sub x} alloys, where x = 0.0, 0.2, 0.5, 1.0, 1.5 and 2.0, were cast under the same suction casting conditions into a wedge-shaped copper mold for investigating the effect of Si addition on the glass-forming ability (GFA). The GFA of the Al–Ni–La base alloys, except for the optimal glass former (Al{sub 85.5}Ni{sub 9.5}La{sub 5}), is enhanced when a proper content of Si is added. The largest content of Si up to which GFA can be enhanced changes in the following order of the base alloys: Al{sub 86}Ni{sub 9}La{sub 5}, Al{sub 86}Ni{sub 9.5}La{sub 4.5}, Al{sub 86}Ni{sub 10}La{sub 4} and Al{sub 86}Ni{sub 10.5}La{sub 3.5}. The enhancement of GFA due to Si addition becomes more significant as the La content decreases. This is presumably because more free Al atoms are present in the base alloy. - Highlights: • 0.2–2.0 at. % Si was added to each ternary base alloy. • Wedge-shaped samples were suction cast to obtain the glass-forming ability (GFA). • The GFA of the ternary non-optimal glass formers can be enhanced by Si addition. • The number of free-Al atoms dominates the best Si addition.

  6. Glass forming ability of Al–Ni–La alloys with Si addition

    International Nuclear Information System (INIS)

    Yi, J.J.; Xiong, X.Z.; Inoue, A.; Kong, L.T.; Li, J.F.

    2015-01-01

    (Al_8_5_._5Ni_9_._5La_5)_1_0_0_−_xSi_x, (Al_8_6Ni_9La_5)_1_0_0_−_xSi_x, (Al_8_6Ni_9_._5La_4_._5)_1_0_0_−_xSi_x, (Al_8_6Ni_1_0La_4)_1_0_0_−_xSi_x and (Al_8_6Ni_1_0_._5La_3_._5)_1_0_0_−_xSi_x alloys, where x = 0.0, 0.2, 0.5, 1.0, 1.5 and 2.0, were cast under the same suction casting conditions into a wedge-shaped copper mold for investigating the effect of Si addition on the glass-forming ability (GFA). The GFA of the Al–Ni–La base alloys, except for the optimal glass former (Al_8_5_._5Ni_9_._5La_5), is enhanced when a proper content of Si is added. The largest content of Si up to which GFA can be enhanced changes in the following order of the base alloys: Al_8_6Ni_9La_5, Al_8_6Ni_9_._5La_4_._5, Al_8_6Ni_1_0La_4 and Al_8_6Ni_1_0_._5La_3_._5. The enhancement of GFA due to Si addition becomes more significant as the La content decreases. This is presumably because more free Al atoms are present in the base alloy. - Highlights: • 0.2–2.0 at. % Si was added to each ternary base alloy. • Wedge-shaped samples were suction cast to obtain the glass-forming ability (GFA). • The GFA of the ternary non-optimal glass formers can be enhanced by Si addition. • The number of free-Al atoms dominates the best Si addition.

  7. SiGN-SSM: open source parallel software for estimating gene networks with state space models.

    Science.gov (United States)

    Tamada, Yoshinori; Yamaguchi, Rui; Imoto, Seiya; Hirose, Osamu; Yoshida, Ryo; Nagasaki, Masao; Miyano, Satoru

    2011-04-15

    SiGN-SSM is an open-source gene network estimation software able to run in parallel on PCs and massively parallel supercomputers. The software estimates a state space model (SSM), that is a statistical dynamic model suitable for analyzing short time and/or replicated time series gene expression profiles. SiGN-SSM implements a novel parameter constraint effective to stabilize the estimated models. Also, by using a supercomputer, it is able to determine the gene network structure by a statistical permutation test in a practical time. SiGN-SSM is applicable not only to analyzing temporal regulatory dependencies between genes, but also to extracting the differentially regulated genes from time series expression profiles. SiGN-SSM is distributed under GNU Affero General Public Licence (GNU AGPL) version 3 and can be downloaded at http://sign.hgc.jp/signssm/. The pre-compiled binaries for some architectures are available in addition to the source code. The pre-installed binaries are also available on the Human Genome Center supercomputer system. The online manual and the supplementary information of SiGN-SSM is available on our web site. tamada@ims.u-tokyo.ac.jp.

  8. Effect of Si addition to Al-8Mg alloy on the microstructure and thermo-physical properties of SiCp/Al composites prepared by pressureless infiltration

    International Nuclear Information System (INIS)

    Ren Shubin; He Xinbo; Qu Xuanhui; Humail, Islam S.; Li Yan

    2007-01-01

    Fifty-five volume percentage of SiCp/Al composites were prepared by pressureless infiltration to investigate the effect of Si addition to Al-8Mg alloy from 0 wt% to 18 wt% on the interfacial reaction between Al and SiC and the thermo-physical properties of the prepared composites. TEM and X-ray analysis showed that the degree of interfacial reaction decreased as the Si content increased, and that it ceased at 1273 K when the Si addition to the aluminum was greater than 12 wt%. The Si addition to Al-8Mg alloy reduced the CTE of the composites and increased their thermal conductivity (TC), but Si beyond 12 wt% led to the reduction of TC, though the CTE was lower. This is attributable to the combined action of the Si on the wettability, interfacial reaction and the TC and CTE of the matrix itself

  9. Effects of interstitial additions on the structure of Ti5Si3

    International Nuclear Information System (INIS)

    Williams, J. J.; Kramer, M. J.; Akinc, M.; Malik, S. K.

    2000-01-01

    Changes in the structure of Ti 5 Si 3 were measured by x-ray and neutron diffraction as carbon, nitrogen, or oxygen atoms were systematically incorporated into the lattice. Additionally, the lattice parameters and variable atomic positions of pure Ti 5 Si 3 were determined to be a=7.460 Aa, c=5.152 Aa, x Ti =0.2509, and x Si =0.6072. The measured trends in lattice parameters as carbon, nitrogen, or oxygen atoms were added to Ti 5 Si 3 showed that most of the previous studies on supposedly pure Ti 5 Si 3 were actually contaminated by these pervasive light elements. Also, oxygen and carbon additions were shown to strongly draw in the surrounding titanium atoms--evidence for bonding between these atoms. The bonding changes that occurred on addition of carbon, nitrogen, or oxygen acted to decrease the measured anisotropic properties of Ti 5 Si 3 , such as thermal expansion. (c) 2000 Materials Research Society

  10. Operation and Modulation of H7 Current Source Inverter with Hybrid SiC and Si Semiconductor Switches

    DEFF Research Database (Denmark)

    Wang, Weiqi; Gao, Feng; Yang, Yongheng

    2018-01-01

    This paper proposes an H7 current source inverter (CSI) consisting of a single parallel-connected silicon carbide (SiC) switch and a traditional silicon (Si) H6 CSI. The proposed H7 CSI takes the advantages of the SiC switch to maintain high efficiency, while significantly increasing the switching...... as an all-SiC-switch converter in terms of high performance and high efficiency with reduced DC inductance. It provides a cost-effective solution to addressing the efficiency issue of conventional CSI systems. Simulations and experiments are performed to validate the effectiveness of the proposed H7 CSI...

  11. Improved thermal stability and oxidation resistance of Al–Ti–N coating by Si addition

    International Nuclear Information System (INIS)

    Chen, Li; Yang, Bing; Xu, Yuxiang; Pei, Fei; Zhou, Liangcai; Du, Yong

    2014-01-01

    Addition of Si is very effective in upgrading the machining performance and thermal properties of Al–Ti–N coating. Here, we concentrate on the thermal stability and oxidation resistance of Al–Ti–Si–N coating. Alloying with Si favors the growth of wurtzite phase, and thereby causes a drop in hardness from ∼ 34.5 to 28.7 GPa. However, Si-containing coating retards the formation of w-AlN during thermal annealing, and thereby behaves a high hardness value of ∼ 31.3 GPa after annealing at T a = 1100 °C. After 10 h exposure in air at 850 °C, Al–Ti–N coating is fully oxidized. Incorporation of Si significantly improves the oxidation resistance of Al–Ti–N due to the combined effects with the promoted formation of Al-oxide rich top-scale and retarded transformation of anatase (a-) TiO 2 into rutile (r-) TiO 2 , where only ∼ 1.43 μm oxide scale is shown after oxidation at 1100 °C for 15 h. Noticeable is that the worst oxidation resistance of Al–Ti–Si–N coating in the temperature range from 800 to 1100 °C is obtained at 950 °C with oxide scale of ∼ 1.76 μm due to the fast formation of r-TiO 2 . Additionally, a pre-oxidation at 1000 °C has a positive effect on the oxidation resistance of Al–Ti–Si–N coating, which is attributed to the formation of Al-oxide rich top-scale, and thus inhibits the outward diffusion of metal atoms and inward diffusion of O. - Highlights: • Si as a substitutional solid solution and via the formation of a-Si 3 N 4 coexists. • Si addition favors the growth of wurtzite phase and causes a decreased hardness. • Alloying with Si improves the oxidation resistance of AlTiN. • AlTiSiN behaves the worst oxidation resistance at 950 °C from 800 to 1100 °C. • A pre-oxidation at 1000 °C improves the oxidation resistance of AlTiSiN coating

  12. Co-delivery of siRNA and doxorubicin to cancer cells from additively manufactured implants

    DEFF Research Database (Denmark)

    Chen, Muwan; Andersen, Morten Østergaard; Dillschneider, Philipp

    2015-01-01

    , capable of physically supporting the void while killing residual cancer cells, would be an attractive solution. Here we describe a novel additively manufactured implant that can be functionalized with chitosan/siRNA nanoparticles. These induce long term gene silencing in adjacent cancer cells without...

  13. Abrasive wear of BA1055 bronze with additives of Si, Cr, Mo and/or W

    Directory of Open Access Journals (Sweden)

    B. P. Pisarek

    2008-10-01

    Full Text Available Aluminium bronzes belong to the high-grade constructional materials applied on the put under strongly load pieces of machines, aboutgood sliding, resistant properties on corrosion both in the cast state how and after the thermal processing. It moves to them Cr and Si in the aim of the improvement of their usable proprieties. The additions Mo and/or W were not applied so far. It was worked out therefore the new kind of bronzes casting including these elements. Make additions to the Cu-Al-Fe-Ni bronze of Si, Cr, Mo and/or W in the rise of these properties makes possible. The investigations of the surface distribution of the concentration of elements in the microstructure of the studied bronze on X-ray microanalyzer were conducted. It results from conducted investigations, that in the aluminium bronze BA1055 after makes additions Si, Cr, Mo and/or W the phases of the type κFe, κNi crystallize, probably as complex silicides. Elements such as: Fe and Si dissolve first of all in phases κ, in smaller stage in the matrix of the bronze; Mn, Ni and W they dissolve in matrix and phases κ. It dissolves Cr and Mo in the larger stage in phases κ than in the matrix. The sizes of the abrasive wear were compared in the state cast multicomponentnew casting Cu-Al-Fe-Ni bronzes with the additives Cr, Mo or W with the wear of the bronze CuAl10Fe5Ni5Si. The investigations of thewear were conducted on the standard device. It results from conducted investigations, that make additions to bronze BA1055 of the additives of Si, Cr, Mo, and/or W it influences the rise of the hardness (HB of the bronze in the cast state, in the result of the enlarged quantity separates of hard phases κ, and in the consequence the decrease of the abrasive wear. The addition of molybdenum made possible obtainment of the microhardness of the phase α and γ 2 on the comparable level. From the microstructure of the bronze CuAl10Fe5Ni5MoSi is characterizes the smallest abrasive wear among

  14. Radioactive Sources in Medicine: Impact of Additional Security Measures

    International Nuclear Information System (INIS)

    Classic, K. L.; Vetter, R. J.; Nelson, K. L.

    2004-01-01

    For many years, medical centers and hospitals have utilized appropriate security measures to prevent theft or unauthorized use of radioactive materials. Recent anxiety about orphan sources and terrorism has heightened concern about diversion of radioactive sources for purposes of constructing a radiological dispersion device. Some medical centers and hospitals may have responded by conducting threat assessments and incorporating additional measures into their security plans, but uniform recommendations or regulations have not been promulgated by regulatory agencies. The International Atomic Energy Agency drafted interim guidance for the purpose of assisting member states in deciding what security measures should be taken for various radioactive sources. The recommendations are aimed at regulators, but suppliers and users also may find the recommendations to be helpful. The purpose of this paper is to describe threat assessments and additional security actions that were taken by one large and one medium-sized medical center and the impact these measures had on operations. Both medical centers possess blood bank irradiators, low-dose-rate therapy sources, and Mo-99/Tc-99m generators that are common to many health care organizations. Other medical devices that were evaluated include high-dose-rate after loaders, intravascular brachytherapy sources, a Co-60 stereotactic surgery unit, and self-shielded irradiators used in biomedical research. This paper will discuss the impact additional security has had on practices that utilize these sources, cost of various security alternatives, and the importance of a security culture in assuring the integrity of security measures without negatively impacting beneficial use of these sources. (Author) 10 refs

  15. Role of cerium, lanthanum, and strontium additions in an Al-Si-Mg (A356) alloy

    Energy Technology Data Exchange (ETDEWEB)

    Nabawy, Ahmed M.; Samuel, Agnes M.; Samuel, Fawzy H. [Universite du Quebec, Chicoutimi (Canada). Dept. des Sciences Appliquees; Alkahtani, Saleh A.; Abuhasel, Khaled A. [Salman Bin Abdulaziz Univ., Riyadh (Saudi Arabia). Mechanical Engineering Dept.

    2016-05-15

    The effects of individual and combined additions of cerium (Ce), lanthanum (La), and strontium (Sr) on the eutectic modification and solidification characteristics of an Al-Si-Mg (A356) aluminum alloy were investigated using optical microscopy and thermal analysis techniques. Addition of Ce, La, and Sr resulted in different depression levels of the eutectic nucleation temperature and eutectic growth undercooling, generating modified eutectic structures exhibiting different levels of modification. Microstructural results showed that the best modification levels using individual additions were achieved by Sr which produced a fine fibrous eutectic structure, followed by La, which produced a refined lamellar structure, with Ce providing the lowest level of modification. On the other hand, a combined addition of Ce and Sr provided the highest modification level, with the production of a very fine fibrous eutectic silicon structure. In general, the addition of Sr helped to further increase the refinement obtained in the alloys containing La or Ce + La additions. In the latter alloy, the main intermetallic phases observed were La(Al,Si){sub 2} and Al{sub 20}(La,Ce)Ti{sub 2}Si. The improved modification levels were found to be proportional to the depression in the eutectic nucleation temperature and the eutectic growth undercooling. A high cooling rate also improved the modification level by at least one level.

  16. Comparison Study on Additive Manufacturing (AM) and Powder Metallurgy (PM) AlSi10Mg Alloys

    Science.gov (United States)

    Chen, B.; Moon, S. K.; Yao, X.; Bi, G.; Shen, J.; Umeda, J.; Kondoh, K.

    2018-02-01

    The microstructural and mechanical properties of AlSi10Mg alloys fabricated by additive manufacturing (AM) and powder metallurgy (PM) routes were investigated and compared. The microstructures were examined by scanning electron microscopy assisted with electron-dispersive spectroscopy. The crystalline features were studied by x-ray diffraction and electron backscatter diffraction. Room-temperature tensile tests and Vickers hardness measurements were performed to characterize the mechanical properties. It was found that the AM alloy had coarser Al grains but much finer Si precipitates compared with the PM alloy. Consequently, the AM alloy showed more than 100% increment in strength and hardness compared with the PM alloy due to the presence of ultrafine forms of Si, while exhibiting moderate ductility.

  17. Lateral boron distribution in polycrystalline SiC source materials

    DEFF Research Database (Denmark)

    Linnarsson, M. K.; Kaiser, M.; Liljedahl, R.

    2013-01-01

    . The materials are co-doped materials with nitrogen and boron to a concentration of 1x1018 cm-3 and 1x1019 cm-3, respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron...

  18. Compositional homogeneity in a medical-grade stainless steel sintered with a Mn–Si additive

    International Nuclear Information System (INIS)

    Salahinejad, E.; Hadianfard, M.J.; Ghaffari, M.; Mashhadi, Sh. Bagheri; Okyay, A.K.

    2012-01-01

    In this paper, chemical composition uniformity in amorphous/nanocrystallization medical-grade stainless steel (ASTM ID: F2581) sintered with a Mn–Si additive was studied via scanning electron microscopy, energy dispersive X-ray spectroscopy, and transmission electron microscopy. The results show that as a result of sintering at 1000 °C, no dissociation of Mn–Si additive particles embedded in the stainless steel matrix occurs. In contrast, sintering at 1050 °C develops a relatively homogeneous microstructure from the chemical composition viewpoint. The aforementioned phenomena are explained by liquation of the Mn–Si eutectic additive, thereby wetting of the main powder particles, penetrating into the particle contacts and pore zones via capillary forces, and providing a path of high diffusivity. - Highlights: ► Local chemical composition in a sintered stainless steel was studied. ► Due to sintering at 1000 °C, no dissociation of additive particles occurs. ► Sintering at 1050 °C provides a uniform chemical composition.

  19. Detection of new southern SiO maser sources associated with Mira and symbiotic stars

    International Nuclear Information System (INIS)

    Allen, D.A.; Hall, P.J.; Norris, R.P.; Troup, E.R.; Wark, R.M.; Wright, A.E.

    1989-01-01

    In 1987 July the Parkes radio telescope was used to search for 43.12 GHz SiO maser emission from southern late-type stars. We report the discovery of such emission from 12 Mira-like systems, including the symbiotic star H1-36, and discuss the implications of our data for the symbiotic stars. We identify several M-type Mira variables with unusually low SiO/infrared flux ratios, but with present data are not able to discredit the correlation between the two parameters. In addition, we present line profiles for the only other known symbiotic maser, R Aqr, at unprecedented signal-to-noise ratio; these profiles show linearly polarized emission from several components of the source. (author)

  20. Improvements in mechanical properties in SiC by the addition of TiC particles

    International Nuclear Information System (INIS)

    Wei, G.C.; Becher, P.F.

    1984-01-01

    Silicon carbide ceramics containing up to 24.6 vol% dispersed TiC particles yielded fully dense composites by hot-pressing at 2000 0 C with 1 wt% Al and 1 wt% C added. The microstructure consists of fine TiC particles in a fine-grained SiC matrix. Addition of TiC particles increases the critical fracture toughness of SiC (to approx. =6 MPa /SUP ./ m /SUP 1/2/ at 24.6 vol% TiC) and yields high flexure strength (greater than or equal to 680 MPa), with both properties increasing with increasing volume fraction of TiC. The strengths at high temperatures are also improved by the TiC additions. Observations of the fracture path indicate that the improved toughness and strength are a result of crack deflection by the TiC particles

  1. Photoluminescence topography of fluorescent SiC and its corresponding source crystals

    DEFF Research Database (Denmark)

    Wilhelm, M.; Kaiser, M.; Jokubavicus, V.

    2013-01-01

    The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence...

  2. Solid source growth of Si oxide nanowires promoted by carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Congxiang [CINTRA CNRS/NTU/THALES, Nanyang Technological University, Singapore 637553 (Singapore); Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Liu, Wen-wen; Wang, Xingli [Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Li, Xiaocheng [Laboratory of clean energy chemistry and materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, No. 18 Tianshui Middle Road, Lanzhou 730000 (China); Tan, Chong Wei [CINTRA CNRS/NTU/THALES, Nanyang Technological University, Singapore 637553 (Singapore); Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Tay, Beng Kang, E-mail: ebktay@ntu.edu.sg [CINTRA CNRS/NTU/THALES, Nanyang Technological University, Singapore 637553 (Singapore); Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Coquet, Philippe [CINTRA CNRS/NTU/THALES, Nanyang Technological University, Singapore 637553 (Singapore)

    2014-09-30

    Highlights: • An array of well aligned and uniform CNTs is successfully fabricated by PECVD. • SiONW growth utilizes Si substrate as the source, ruling out the usage of silane. • With CNT array on the substrate, SiONW growth is improved significantly. • CNTs help dispersion of the catalysts and diffusion of the Si atoms. - Abstract: We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs serve as a scaffold, which helps the dispersion of catalysts for SiONWs and also provides space for hydrogen which boosts the diffusion of Si atoms and hence formation of SiONWs. As the result, a three dimensional (3D) hybrid network of densely packed SiONWs and CNTs can be produced rapidly.

  3. K-capture by Al-Si based Additives in an Entrained Flow Reactor

    DEFF Research Database (Denmark)

    Wang, Guoliang; Jensen, Peter Arendt; Wu, Hao

    2016-01-01

    A water slurry, consisting of KCl and Al-Si based additives (kaolin and coal fly ash) was fed into an entrained flow reactor (EFR) to study the K-capturing reaction of the additives at suspension-fired conditions. Solid products collected from the reactor were analysed with respect to total...... of KCl to K-aluminosilicate decreased. When reaction temperature increased from 1100 °C to 1450 °C, the conversion of KCl does not change significantly, which differs from the trend observed in fixed-bed reactor....

  4. Spent yeast as natural source of functional food additives

    Science.gov (United States)

    Rakowska, Rita; Sadowska, Anna; Dybkowska, Ewa; Świderski, Franciszek

    Spent yeasts are by-products arising from beer and wine production which over many years have been chiefly used as feed additives for livestock. They contain many valuable and bioactive substances which has thereby generated much interest in their exploitation. Up till now, the main products obtained from beer-brewing yeasts are β-glucans and yeast extracts. Other like foodstuffs include dried brewer’s yeast, where this is dried and the bitterness removed to be fit for human consumption as well as mannan-oligosaccharides hitherto used in the feed industry. β-glucans constitute the building blocks of yeast cell walls and can thus be used in human nutrition as dietary supplements or serving as food additives in functional foods. β-glucans products obtained via post-fermentation of beer also exhibit a high and multi-faceted biological activity where they improve the blood’s lipid profile, enhance immunological status and have both prebiotic and anti-oxidant properties. Yeast extracts are currently being used more and more to enhance flavour in foodstuffs, particularly for meat and its products. Depending on how autolysis is carried out, it is possible to design extracts of various meat flavours characteristic of specific meats. Many different flavour profiles can be created which may be additionally increased in combination with vegetable extracts. Within the food market, yeast extracts can appear in various guises such as liquids, pastes or powders. They all contain significant amounts of glutamic acid, 5’-GMP and 5’-IMP nucleotides together with various amino acids and peptides that act synergistically for enhancing the flavour of foodstuff products. Recent studies have demonstrated additional benefits of yeast extracts as valuable sources of amino acids and peptides which can be used in functional foods and dietary supplements. These products possess GRAS status (Generally Recognised As Safe) which thereby also adds further as to why they should be used

  5. Microstructural characterisation of Al-Si cast alloys containing rare earth additions

    Science.gov (United States)

    Elgallad, E. M.; Ibrahim, M. F.; Doty, H. W.; Samuel, F. H.

    2018-05-01

    This paper presents a thorough study on the effect of rare earth elements, specifically La and Ce, on the microstructure characteristics of non-modified and Sr-modified A356 and A413 alloys. Several alloys were prepared by adding 1% La and 1% Ce either individually or in combination. Microstructural characterisation was carried out using optical microscopy, scanning electron microscopy and electron probe microanalysis as well as differential scanning calorimetry (DSC) analysis. The results showed that the individual and combined additions of La and Ce did not bring about any modification or even refinement in the eutectic Si structure. Moreover, these additions were found to negate the modification effect of Sr, particularly in the presence of La. The A356 and A413 alloys containing La and/or Ce displayed high phase volume fractions owing to the formation of Al-Si-La/Ce/(La,Ce) and Al-Ti-La/Ce intermetallic phases. DSC analysis revealed that the formation temperatures of these phases varied from 560 to 568 °C and 568 to 574 °C, respectively. This analysis also showed that the addition of La and Ce whether individually or in combination resulted in a depression in the eutectic temperature and a considerable increase in the solidification range, particularly for the A413 alloy.

  6. Silicon-photonics light source realized by III-V/Si grating-mirror laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Mørk, Jesper

    2010-01-01

    waveguide are made in the Si layer of a silicon-on-insulator wafer by using Si-electronics-compatible processing. The HCG works as a highly-reflective mirror for vertical resonance and at the same time routes light to the in-plane output waveguide. Numerical simulations show superior performance compared...... to existing silicon light sources....

  7. Kinetic Investigations of SiMn Slags From Different Mn Sources

    Science.gov (United States)

    Kim, Pyunghwa Peace; Tangstad, Merete

    2018-03-01

    The kinetics of MnO and SiO2 reduction were investigated for Silicomanganese (SiMn) slags using a Thermogravimetric analysis (TGA) between 1773 K and 1923 K (1500 °C and 1650 °C) under CO atmospheric pressure. The charge materials were based on Assmang ore and HC FeMn Slag. Rate models for MnO and SiO2 reduction were applied to describe the metal-producing rates, as shown by the following equations: r_{MnO} = k_{MnO} × A × ( {a_{MnO} - {a_{Mn} }/{K_{T }}} ) r_{{{SiO}2 }} = k_{SiO2} × A × ( {a_{{{SiO}2 }} - {a_{Si} }/{K_{T }}} ). The results show that the choice of raw materials in the charge considerably affected the reduction rate of MnO and SiO2. The highest reduction rate was found to be from charges using HC FeMn slag. The difference in the driving forces was insignificant among the SiMn slags, and the similar slag viscosities could not explain the different reduction rates. Instead, the difference is attributed to small amounts of sulfur and the amount of iron in the charge. In addition, the rate models were applicable to describe the reduction of MnO and SiO2 in SiMn slags.

  8. Improved flux pinning behaviour in bulk MgB2 achieved by nano-SiO2 addition

    International Nuclear Information System (INIS)

    Rui, X F; Zhao, Y; Xu, Y Y; Zhang, L; Sun, X F; Wang, Y Z; Zhang, H

    2004-01-01

    Bulk MgB 2 with SiO 2 nanoparticles added has been synthesized using a simple solid-state reaction route. The lattice constant in the c direction increases with additive content due to a small amount of Si being doped into the lattice of the MgB 2 ; however, T c is almost fixed at 37.2 K. The addition of SiO 2 nanoparticles also improves the J c -H and H irr -T characteristics of MgB 2 when the additive content is lower than 7%. At 20 K and 1 T, J c for the sample with 7% additive content reaches 2.5 x 10 5 A cm -2 . Microstructural analysis reveals that a high density of MgSi 2 nanoparticles (10-50 nm) exists inside the MgB 2 grains, leading to the formation of a nanocomposite superconductor

  9. Effect of Rapid Solidification and Addition of Cu3P on the Mechanical Properties of Hypereutectic Al-Si Alloys

    OpenAIRE

    Suárez-Rosales,Miguel Ángel; Pinto-Segura,Raúl; Palacios-Beas,Elia Guadalupe; Hernández-Herrera,Alfredo; Chávez-Alcalá,José Federico

    2016-01-01

    The combined processes; rapid solidification, addition of Cu3P compound and heat treatments to improve the mechanical properties of the hypereutectic Al-13Si, Al-20Si and Al-20Si-1.5Fe-0.7Mn alloys (in wt. %) was studied. Optical microscopy and scanning electron microscopy were used to characterize the microstructures. The mechanical properties were evaluated by tensile tests. It was found that the cooling rate (20-50°C/s) used to solidify the alloys plus the addition of Cu3P compound favored...

  10. The natural aging and precipitation hardening behaviour of Al-Mg-Si-Cu alloys with different Mg/Si ratios and Cu additions

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Lipeng [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 China (China); Jia, Zhihong, E-mail: zhihongjia@cqu.edu.cn [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 China (China); Zhang, Zhiqing; Sanders, Robert E.; Liu, Qing [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 China (China); Yang, Guang [Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Centre for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049 (China)

    2015-03-11

    The natural aging and artificial aging behaviours of Al-Mg-Si-Cu alloys with different Mg/Si ratios and Cu additions were investigated using Vickers microhardness measurements, differential scanning calorimetry (DSC) analysis and transmission electron microscopy (TEM) characterisation. Excess Si and Cu additions enhanced the alloy hardening ability during natural (NA) and artificial aging (AA). Alloys with low Cu and high Si contents exhibited higher precipitation hardening than alloys rich in Mg during artificial aging. In contrast, the alloys with high amounts of Cu were less dependent on the Mg/Si ratio during precipitation hardening due to their similar aging kinetics. The main precipitate phases that contributed to the peak-aging hardness were the L, Q′ and β″ phases. In the over-aging conditions, the alloys rich in Mg and Cu had finer and more numerous precipitates than their Si-rich equivalents due to the preferential precipitation of the L phase. The combination of excess Mg and high Cu resulted in an alloy with a relatively low hardness in T4 temper and a relatively higher hardness after the paint baking cycle. Thus, this alloy has good potential for use in auto body panel applications.

  11. SIMULTANEOUS OBSERVATIONS OF SiO AND H{sub 2}O MASERS TOWARD KNOWN STELLAR H{sub 2}O MASER SOURCES

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jaeheon [Yonsei University Observatory, Seongsan-ro 262, Seodaemun, Seoul 120-749 (Korea, Republic of); Cho, Se-Hyung [Korean VLBI Network Yonsei Radio Astronomy Observatory, Yonsei University, Seongsan-ro 262, Seodaemun, Seoul 120-749 (Korea, Republic of); Kim, Sang Joon, E-mail: jhkim@kasi.re.kr, E-mail: cho@kasi.re.kr, E-mail: sjkim1@khu.ac.kr [Department of Astronomy and Space Science, Kyung Hee University, Seocheon-Dong, Giheung-Gu, Yongin, Gyeonggi-Do 446-701 (Korea, Republic of)

    2013-01-01

    We present the results of simultaneous observations of SiO v = 1, 2, {sup 29}SiO v = 0, J = 1-0, and H{sub 2}O 6{sub 16}-5{sub 23} maser lines toward 152 known stellar H{sub 2}O maser sources using the Yonsei 21 m radio telescope of the Korean VLBI Network from 2009 June to 2011 January. Both SiO and H{sub 2}O masers were detected from 62 sources with a detection rate of 40.8%. The SiO-only maser emission without H{sub 2}O maser detection was detected from 27 sources, while the H{sub 2}O-only maser without SiO maser detection was detected from 22 sources. Therefore, the overall SiO maser emission was detected from 89 sources, resulting in a detection rate of 58.6%. We have identified 70 new detections of the SiO maser emission. For both H{sub 2}O and SiO maser detected sources, the peak and integrated antenna temperatures of SiO masers are stronger than those of H{sub 2}O masers in both Mira variables and OH/IR stars and the relative intensity ratios of H{sub 2}O to SiO masers in OH/IR stars are larger than those in Mira variables. In addition, distributions of 152 observed sources were investigated in the IRAS two-color diagram.

  12. The Relationship between Nanocluster Precipitation and Thermal Conductivity in Si/Ge Amorphous Multilayer Films: Effects of Cu Addition

    Directory of Open Access Journals (Sweden)

    Ahmad Ehsan Mohd Tamidi

    2016-01-01

    Full Text Available We have used a molecular dynamics technique to simulate the relationship between nanocluster precipitation and thermal conductivity in Si/Ge amorphous multilayer films, with and without Cu addition. In the study, the Green-Kubo equation was used to calculate thermal conductivity in these materials. Five specimens were prepared: Si/Ge layers, Si/(Ge + Cu layers, (Si + Cu/(Ge + Cu layers, Si/Cu/Ge/Cu layers, and Si/Cu/Ge layers. The number of precipitated nanoclusters in these specimens, which is defined as the number of four-coordinate atoms, was counted along the lateral direction of the specimens. The observed results of precipitate formation were considered in relation to the thermal conductivity results. Enhancement of precipitation of nanoclusters by Cu addition, that is, densification of four-coordinate atoms, can prevent the increment of thermal conductivity. Cu dopant increases the thermal conductivity of these materials. Combining these two points, we concluded that Si/Cu/Ge is the best structure to improve the conversion efficiency of the Si/Ge amorphous multilayer films.

  13. Effect of addition of V and C on strain recovery characteristics in Fe-Mn-Si alloy

    International Nuclear Information System (INIS)

    Lin Chengxin; Wang Guixin; Wu Yandong; Liu Qingsuo; Zhang Jianjun

    2006-01-01

    Shape recoverable strain, recovery stress and low-temperature stress relaxation characteristics in an Fe-17Mn-5Si-10Cr-4Ni (0.08C) alloy and an Fe-17Mn-2Cr-5Si-2Ni-1V (0.23C) alloy have been studied by means of X-ray diffraction, transmission electron microscopy and measurement of recoverable strain and recovery stress. The amount of stress-induced ε martensite under tensile deformation at room temperature, recoverable strain and recovery stress are increased obviously with addition V and C in Fe-Mn-Si alloy, which is owing to the influence of addition V and C on strengthening austenitic matrix. Addition of V and C in Fe-Mn-Si alloy is evidently effective to reduce the degree of low-temperature stress relaxation, for the dispersed VC particles 50-180 nm in size precipitated during annealing restrain the stress induced martensitic transformation

  14. Spatially Controlled Delivery of siRNAs to Stem Cells in Implants Generated by Multi-Component Additive Manufacturing

    DEFF Research Database (Denmark)

    Andersen, Morten Østergaard; Le, Dang Quang Svend; Chen, Muwan

    2013-01-01

    Additive manufacturing is a promising technique in tissue engineering, as it enables truly individualized implants to be made to fit a particular defect. As previously shown, a feasible strategy to produce complex multicellular tissues is to deposit different small interfering RNA (siRNA) in porous...... implants that are subsequently sutured together. In this study, an additive manufacturing strategy to deposit carbohydrate hydrogels containing different siRNAs is applied into an implant, in a spatially controlled manner. When the obtained structures are seeded with mesenchymal stem (stromal) cells......, the selected siRNAs are delivered to the cells and induces specific and localized gene silencing. Here, it is demonstrated how to replicate part of a patient's spinal cord from a computed tomography scan, using an additive manufacturing technique to produce an implant with compartmentalized si...

  15. Addition of iron for the removal of the {beta}-AlFeSi intermetallic by refining of {alpha}-AlFeSi phase in an Al-7.5Si-3.6Cu alloy

    Energy Technology Data Exchange (ETDEWEB)

    Belmares-Perales, S. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico); Zaldivar-Cadena, A.A., E-mail: azaldiva70@hotmail.com [Facultad de Ingenieria Civil, Departamento de Ecomateriales y Energia, Instituto de Ingenieria Civil, Av. Fidel Velasquez and Av. Universidad S/N, Cd. Universitaria, San Nicolas de los Garza, N.L. 66450 (Mexico)

    2010-10-25

    Addition of iron into the molten metal for the removal of the {beta}-AlFeSi intermetallic by refining of {alpha}-AlFeSi phase has been studied. Solidification conditions and composition determine the final microstructure and mechanical properties of a casting piece. It is known that increasing the iron content will produce an increasing of the {alpha}-AlFeSi and {beta}-AlFeSi phases. This phenomenon was confirmed with calculations made by Thermo-Calc{sup TM} software and validated with experimental results, however, the technique of iron addition in this study plays an important role on the solidification kinetics of these iron phases because the refining of {alpha}-AlFeSi and removal of {beta}-AlFeSi phases can be improved. Final results showed an improvement in mechanical properties by removal and refining of {beta}-AlFeSi and {alpha}-AlFeSi phases, respectively. This study shows a new method of removal of {beta}-AlFeSi that could be adopted in the aluminum smelting industry in aluminum alloys with a low cooling rate with a secondary dendritic spacing of about 37 {mu}m.

  16. Addition of iron for the removal of the β-AlFeSi intermetallic by refining of α-AlFeSi phase in an Al-7.5Si-3.6Cu alloy

    International Nuclear Information System (INIS)

    Belmares-Perales, S.; Zaldivar-Cadena, A.A.

    2010-01-01

    Addition of iron into the molten metal for the removal of the β-AlFeSi intermetallic by refining of α-AlFeSi phase has been studied. Solidification conditions and composition determine the final microstructure and mechanical properties of a casting piece. It is known that increasing the iron content will produce an increasing of the α-AlFeSi and β-AlFeSi phases. This phenomenon was confirmed with calculations made by Thermo-Calc TM software and validated with experimental results, however, the technique of iron addition in this study plays an important role on the solidification kinetics of these iron phases because the refining of α-AlFeSi and removal of β-AlFeSi phases can be improved. Final results showed an improvement in mechanical properties by removal and refining of β-AlFeSi and α-AlFeSi phases, respectively. This study shows a new method of removal of β-AlFeSi that could be adopted in the aluminum smelting industry in aluminum alloys with a low cooling rate with a secondary dendritic spacing of about 37 μm.

  17. Dry sliding wear behaviour of Al-12Si-4Mg alloy with cerium addition

    International Nuclear Information System (INIS)

    Anasyida, A.S.; Daud, A.R.; Ghazali, M.J.

    2010-01-01

    The purpose of this work is to understand the effect of cerium addition on wear resistance behaviour of as-cast alloys. Al-12Si-4 Mg alloys with 1-5 wt% cerium addition were prepared using the casting technique. A sliding wear test was carried out under applied loads of 10 N, 30 N and 50 N at a fixed sliding speed of 1 m/s using a pin-on-disc configuration. The wear test was conducted in dry conditions at room temperature of ∼25 o C. Detailed analysis of the microstructure, worn surface, collected debris and microhardness was undertaken in order to investigate the differences between the as-cast alloys with different levels of cerium addition. The addition of 1-5 wt% cerium was found to lead to the precipitation of intermetallic phases (Al-Ce), resulting a needle-like structures. Increasing cerium content up to 2 wt% improved both wear resistance and microhardness of as-cast alloys. Addition of more than 2 wt% cerium, however, led to a decrease in microhardness, resulting in lower wear resistance of the alloys. Moderate wear was observed at all loads, with specific wear rates (K') ranging from 6.82 x 10 -5 with 2 wt% Ce at applied load of 50 N to 21.48 x 10 -5 mm 3 /N m without added Ce at an applied load of 10 N. Based on K' ranges, the as-cast alloys exhibited moderate wear regimes, and the mechanism of wear is a combination of abrasion and adhesion. Alloy containing 2 wt% Ce, with the highest hardness and lowest K' value, showed the greatest wear resistance.

  18. Influence of Si addition on the microstructure and mechanical properties of Ti-35Nb alloy for applications in orthopedic implants.

    Science.gov (United States)

    Tavares, A M G; Ramos, W S; de Blas, J C G; Lopes, E S N; Caram, R; Batista, W W; Souza, S A

    2015-11-01

    In the development of new materials for orthopedic implants, special attention has been given to Ti alloys that show biocompatible alloy elements and that are capable of reducing the elastic modulus. Accordingly, Ti-Nb-Si alloys show great potential for application. Thus, this is a study on the microstructures and properties of Ti-35Nb-xSi alloys (x=0, 0.15, 0.35 and 0.55) (wt%) which were thermally treated and cooled under the following conditions: furnace cooling (FC), air cooling (AC), and water quenching (WQ). The results showed that Si addition is effective to reduce the density of omega precipitates making beta more stable, and to produce grain refinement. Silicides, referred as (Ti,Nb)3Si, were formed for alloys containing 0.55% Si, and its formation presumably occurred during the heating at 1000°C. In all cooling conditions, the hardness values increased with the increasing of Si content, as a result from the strong Si solid solution strengthening effect, while the elastic modulus underwent a continuous reduction due to the reduction of omega precipitates in beta matrix. Lower elastic moduli were observed in water-quenched alloys, which concentration of 0.15% Si was more effective in their reduction, with value around 65 GPa. Regarding Ti-35Nb-xSi alloys (x=0, 0.15 and 0.35), the "double yield point" phenomenon, which is typical of alloys with shape memory effect, was observed. The increase in Si concentration also produced an increase from 382 MPa to 540 MPa in the alloys' mechanical strength. Ti-35Nb-0.55Si alloy, however, showed brittle mechanical behavior which was related to the presence of silicides at the grain boundary. Copyright © 2015 Elsevier Ltd. All rights reserved.

  19. Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

    Science.gov (United States)

    Rao, A. V. Narasimha; Swarnalatha, V.; Pal, P.

    2017-12-01

    Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH2OH) in 20 wt% KOH solution. The concentration of NH2OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH2OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH2OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO2.

  20. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D., E-mail: music@mch.rwth-aachen.de; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Bednarcik, J.; Michalikova, J. [Deutsches Elektronen Synchrotron DESY, FS-PE group, Notkestrasse 85, D-22607 Hamburg (Germany)

    2015-01-14

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

  1. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    International Nuclear Information System (INIS)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D.; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M.; Bednarcik, J.; Michalikova, J.

    2015-01-01

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O 2 atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al 2 O 3 formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO 2 at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al 2 O 3 with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds

  2. Effect of sintering temperature on structure of C-B4C-SiC composites with silicon additive

    International Nuclear Information System (INIS)

    Wu Lijun; Academia Sinica, Shenyang; Huang Qizhong; Yang Qiaoqin; Zhao Lihu; Xu Zhongyu

    1996-01-01

    Carbon materials possess good electric conductivity, heat conductivity, corrosion-resistance, self-lubrication and hot-shocking resistance, and are easily machined. However, they have low mechanical strength, and are easily oxidized in air at high temperature. On the contrary, ceramic materials have high mechanical strength and hardness, and have good wear-resistance and oxidation-resistance. However, they have the shortages of poor thermal-shock resistance lubrication, and are difficult to machine. Therefore, carbon/ceramic composites with the advantages of both carbon and ceramic materials have been widely studied in the recent years. Huang prepared C-B 4 C-SiC composites with the free sintering method and the hot pressing method, and studied the effects of Si, Al, Al 2 O 3 , Ni and Ti additives on the properties of the composites. The results showed that these additives could improve the properties of the composites. Zhao et al. studies the structure of C-B 4 C-SiC composites with Si additive sintered at 2,000 C and found two c-center monoclinic phases. In this paper, the authors discussed the effect of the sintering temperature on the structure of C-B 4 C-SiC composites with Si additive by means of transmission electron microscope (TEM) and x-ray diffractometer (XRD)

  3. Various aspects of research of the SI engine with an additional expansion process

    Directory of Open Access Journals (Sweden)

    Noga Marcin

    2017-01-01

    Full Text Available The paper presents an analysis of the results of the both experimental results and theoretical works on the SI engine with additional expansion of exhaust gases, also known as five-stroke engine. The engine like this was constructed at Cracow University of Technology as a retrofitted in-line four cylinder engine in which outer cylinders (1st and 4th work as fired cylinders and inner cylinders (2nd and 3rd work as volume for the additional expansion. The aim of development of such an engine is to gain higher energy recovery ratio of the combusted fuel through the second expansion of exhaust in a separate cylinder. The operating parameters of the engine in various versions were analyzed: as naturally aspirated, supercharged using a turbocharger with a waste-gate valve and a turbocharger with variable nozzle turbine. Selected results of the indicating measurements of the engine with special emphasis on the indicated thermal efficiency were presented. The results pointed out the directions of further optimization of the engine. These results are all the more important, because according to the author’s knowledge, the research on the real object of this type are carried out in only one science center in the world besides Cracow University of Technology.

  4. Accelerated age hardening by plastic deformation in Al-Cu with minor additions of Si and Ge

    International Nuclear Information System (INIS)

    Victoria Castro Riglos, M.; Taquire de la Cruz, M.; Tolley, Alfredo

    2011-01-01

    An extremely fast hardening response with no reduction in peak hardness was obtained in Al-Cu with minor additions of Si and Ge by 8% plastic deformation before artificial aging. The mechanism for the accelerated hardening was determined by detailed characterization with transmission electron microscopy. Plastic deformation was found to enhance the nucleation rate of Si-Ge precipitates, resulting in a higher volume density. Such precipitates catalyzed the formation of θ' precipitates that are responsible for hardening.

  5. Effect of Gd–Ca combined additions on the microstructure and creep properties of Mg–7Al–1Si alloys

    International Nuclear Information System (INIS)

    Liu, Jian; Wang, Wuxiao; Zhang, Sha; Zhang, Dongjie; Zhang, Haiyan

    2015-01-01

    Highlights: • The effect of compound addition of Ca and Gd on the microstructure and creep properties of Mg–7Al–1Si alloys was investigated. • After adding 1 wt.% of (Ca + Gd), the creep strain and steady-state creep rate were reduced by about 80% and 84%, respectively. • After adding 1 wt.% of (Ca + Gd), the creep properties of Mg–7Al–1Si alloys were superior to that containing single Gd additive. • The improvement of creep properties after compound addition of Gd and Ca is a result of multiple factors. - Abstract: The microstructure and creep properties of Mg–7Al–1Si alloys with combined additions of alkaline earth element Ca and rare earth element (RE) Gd were investigated using scanning electron microscope (SEM), optical microscope, energy dispersive spectrometer (EDS), X-ray diffraction (XRD), and compressive creep tests. It was found that the combined additions of Ca and Gd contributed to grain refinement, modification of the morphology of coarse Chinese script Mg 2 Si phase, and reduction of β-Mg 17 Al 12 content. Mg–7Al–1Si alloys containing 1 wt.% compound modifier (0.5 wt.% Gd + 0.5 wt.% Ca) exhibited the minimal steady-state creep rate, and were even superior to Mg–7Al–1Si alloys containing single Gd addition. The great improvement of creep properties is mainly attributed to the reduction in the amount and continuity of eutectic β-Mg 17 Al 12 phase, morphology modification of Mg 2 Si phase, solution strengthening of Gd, as well as the formation of thermally stable intermetallic Al 2 Gd, which acted as an effective barrier against grain boundary sliding and dislocation movement

  6. ENERGETIC NEUTRAL ATOMS: AN ADDITIONAL SOURCE FOR HELIOSPHERIC PICKUP IONS

    International Nuclear Information System (INIS)

    Bochsler, Peter; Moebius, Eberhard

    2010-01-01

    Recently, Schwadron and McComas discussed the possibility of inner source pickup particles originating from the ionization of energetic neutral atoms (ENAs), based on new data from the IBEX mission. This proposition has some interesting features, namely, it might be able to explain why inner source pickup ions (PUIs) have a composition resembling solar abundances and show no indication of overabundance of refractory elements, although this should be expected, if the conventional explanation of solar wind-dust interaction for the origin of this heliospheric component were correct. In this Letter, we explore further consequences for ENA-related PUIs and investigate their velocity distributions. We conclude that this model will not reproduce the observed velocity distributions of inner source PUIs and point out a substantial deviation in their composition. However, it seems likely that the ionization of ENAs as observed with IBEX could contribute a significant amount of heliospheric suprathermal tail ions. Some possible consequences of our investigation for heliospheric particle populations are briefly discussed.

  7. Influence of Si and N additions on structure and phase stability of Ge(2)Sb(2)Te(5) thin films.

    Science.gov (United States)

    Kölpin, Helmut; Music, Denis; Laptyeva, Galyna; Ghadimi, Reza; Merget, Florian; Richter, Silvia; Mykhaylonka, Ruslàn; Mayer, Joachim; Schneider, Jochen M

    2009-10-28

    The influence of Si and N in Ge(2)Sb(2)Te(5) (space group [Formula: see text]) on structure and phase stability thereof was studied experimentally by thin film growth and characterization as well as theoretically by ab initio calculations. It was found that Si and N most probably accumulate in the amorphous matrix embedding Ge(2)Sb(2)Te(5) grains. The incorporation of Si and N in these samples causes an increase of the crystallization temperature and the formation of finer grains. N is more efficient in increasing the crystallization temperature and in reducing the grain size than Si which can be understood based on the bonding analysis. The incorporation of both Si and N in Ge(2)Sb(2)Te(5) is energetically unfavourable, leading to finer grains and larger crystallization temperatures. While in the case of Si additions no significant changes in bonding are observed, N additions appear to enable the formation of strong Te-N bonds in the amorphous matrix, which are shown to be almost twice as strong as the strongest bonds in unalloyed Ge(2)Sb(2)Te(5).

  8. Influence of Si and N additions on structure and phase stability of Ge2Sb2Te5 thin films

    International Nuclear Information System (INIS)

    Koelpin, Helmut; Music, Denis; Mykhaylonka, Ruslan; Schneider, Jochen M; Laptyeva, Galyna; Ghadimi, Reza; Richter, Silvia; Mayer, Joachim; Merget, Florian

    2009-01-01

    The influence of Si and N in Ge 2 Sb 2 Te 5 (space group Fm3-barm) on structure and phase stability thereof was studied experimentally by thin film growth and characterization as well as theoretically by ab initio calculations. It was found that Si and N most probably accumulate in the amorphous matrix embedding Ge 2 Sb 2 Te 5 grains. The incorporation of Si and N in these samples causes an increase of the crystallization temperature and the formation of finer grains. N is more efficient in increasing the crystallization temperature and in reducing the grain size than Si which can be understood based on the bonding analysis. The incorporation of both Si and N in Ge 2 Sb 2 Te 5 is energetically unfavourable, leading to finer grains and larger crystallization temperatures. While in the case of Si additions no significant changes in bonding are observed, N additions appear to enable the formation of strong Te-N bonds in the amorphous matrix, which are shown to be almost twice as strong as the strongest bonds in unalloyed Ge 2 Sb 2 Te 5 .

  9. A simulation study of 6H-SiC Schottky barrier source/drain MOSFET

    International Nuclear Information System (INIS)

    Wang Yuan; Zhang Yimen; Zhang Yuming; Tang Xiaoyan

    2003-01-01

    A novel SiC metal-oxide-semiconductor field-effect transistor (SiC SBSD-MOSFET) with Schottky barrier contacts for source and drain is presented in this paper. This kind of device gives a fabrication advantage of avoiding the steps of ion implantation and annealing at high temperatures of the conventional SiC MOSFET. Also it has no problems of crystal damage caused by ion implantation and low activation rate of implanted atoms. The operational mechanism of this device is analyzed and its characteristics are comparable to the conventional SiC MOSFET from the simulation with MEDICI. The effects of different metal workfunctions, oxide thickness, and gate length on the device performance are discussed

  10. Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

    Science.gov (United States)

    Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

    2015-11-11

    Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

  11. Effect of organic additives on mechanical properties of SiC ceramics prepared by a modified gelcasting method

    Directory of Open Access Journals (Sweden)

    Feng Wang

    2016-12-01

    Full Text Available A novel and simple gel system of isobutylene and maleic anhydride (PIBM was used to prepare SiC ceramics. The rheological behaviour of the SiC slurries was investigated as function of organic additives. The SiC slurries with 0.2 wt.% PIBM and 0.2 wt.% tetramethylammonium hydroxide (TMAH showed low viscosity, which was favourable for casting SiC green bodies. In order to obtain homogeneous green bodies, polyvinyl alcohol (PVA was used to assist the dispersion of carbon black in the slurries, and polyethylene glycol (PEG was added to inhibit the surface exfoliation of green bodies. The content of PVA was controlled carefully to avoid the warpage of green bodies during the drying process. Finally, homogeneous defect-free SiC green bodies were successfully fabricated via aqueous gelcasting. The SiC ceramics sintered at 2100 °C (prepared from slurries with solid content of 60 wt.% showed an average flexural strength of 305.7 MPa with porosity of 19.92%.

  12. Influence of Li₂Sb Additions on Microstructure and Mechanical Properties of Al-20Mg₂Si Alloy.

    Science.gov (United States)

    Yu, Hong-Chen; Wang, Hui-Yuan; Chen, Lei; Zha, Min; Wang, Cheng; Li, Chao; Jiang, Qi-Chuan

    2016-03-29

    It is found that Li₂Sb compound can act as the nucleus of primary Mg₂Si during solidification, by which the particle size of primary Mg₂Si decreased from ~300 to ~15-25 μm. Owing to the synergistic effect of the Li₂Sb nucleus and adsorption-poisoning of Li atoms, the effect of complex modification of Li-Sb on primary Mg₂Si was better than that of single modification of Li or Sb. When Li-Sb content increased from 0 to 0.2 and further to 0.5 wt.%, coarse dendrite changed to defective truncated octahedron and finally to perfect truncated octahedral shape. With the addition of Li and Sb, ultimate compression strength (UCS) of Al-20Mg₂Si alloys increased from ~283 to ~341 MPa and the yield strength (YS) at 0.2% offset increased from ~112 to ~179 MPa while almost no change was seen in the uniform elongation. Our study offers a simple method to control the morphology and size of primary Mg₂Si, which will inspire developing new Al-Mg-Si alloys with improved mechanical properties.

  13. Bremsstrahlung and Ion Beam Current Measurements with SuSI ECR Ion Source

    International Nuclear Information System (INIS)

    Ropponen, T.

    2012-01-01

    This series of slides presents: the Superconducting Source for Ions (SuSI), the X-ray measurement setup, the different collimation schemes, the flat B operation versus B(min) operation, and the impact of tuning ∇B while keeping fixed field profile

  14. Effect of Si addition on glass-forming ability and mechanical properties of Cu-Zr-Al bulk metallic glass

    International Nuclear Information System (INIS)

    Malekan, M.; Shabestari, S.G.; Zhang, W.; Seyedein, S.H.; Gholamipour, R.; Makino, A.; Inoue, A.

    2010-01-01

    Research highlights: The Cu 50 Zr 43 Al 7 alloy has a surprising GFA, and the glassy rods with diameter of 10 mm have been produced in this research. It has not been reported that the Cu-based glassy rods (Cu ≥ 50 at.%) to be produced with the critical diameter greater than 10 mm. The novelty of this research is that the glass formation has been improved and the critical diameter increased to 12 mm for the alloy having x = 1 with the addition of Si. Different criteria are used to evaluate the influence of Si content on the GFA, and the possible mechanisms involved in the achievement of this GFA are also discussed. - Abstract: The effect of Si addition on the glass-forming ability (GFA) and mechanical properties of (Cu 50 Zr 43 Al 7 ) 100-x Si x (x = 0, 0.5, 1, 1.5 and 2 at.%) alloys were investigated. The GFA of Cu 50 Zr 43 Al 7 alloy is improved by addition of a small amount of Si, and the critical diameter for glass formation increases from 10 mm for the alloy with x = 0-12 mm for the alloy with x = 1 when prepared using copper mold casting. Different criteria are used to evaluate the influence of Si content on the GFA, and the possible mechanisms involved in the achievement of this GFA are also discussed. In the uniaxial compression, the bulk glassy alloys exhibit a limited plastic strain of less than 1%, but the compressive fracture strength and Young's modulus were obtained in high values of 1969-2129 MPa and 101-144 GPa, respectively. Fracture surface and shear bands of samples were studied by using scanning electron microscopy (SEM).

  15. Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:H

    Energy Technology Data Exchange (ETDEWEB)

    Molpeceres, C. [Centro Laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3, 28031 Madrid (Spain)], E-mail: carlos.molpeceres@upm.es; Lauzurica, S.; Garcia-Ballesteros, J.J.; Morales, M.; Guadano, G.; Ocana, J.L. [Centro Laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3, 28031 Madrid (Spain); Fernandez, S.; Gandia, J.J. [Dept. de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda, Complutense 22, 28040 Madrid (Spain); Villar, F.; Nos, O.; Bertomeu, J. [CeRMAE Dept. Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona (Spain)

    2009-03-15

    Lasers are essential tools for cell isolation and monolithic interconnection in thin-film-silicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCOs), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However, material ablation with minimum debris and small heat affected zone is one of the main difficulty is to achieve, to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of diode-pumped solid-state (DPSS) laser sources. We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process-quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si:H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial laser sources as an alternative to standard backscribing process in device fabrication.

  16. Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:H

    International Nuclear Information System (INIS)

    Molpeceres, C.; Lauzurica, S.; Garcia-Ballesteros, J.J.; Morales, M.; Guadano, G.; Ocana, J.L.; Fernandez, S.; Gandia, J.J.; Villar, F.; Nos, O.; Bertomeu, J.

    2009-01-01

    Lasers are essential tools for cell isolation and monolithic interconnection in thin-film-silicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCOs), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However, material ablation with minimum debris and small heat affected zone is one of the main difficulty is to achieve, to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of diode-pumped solid-state (DPSS) laser sources. We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process-quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si:H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial laser sources as an alternative to standard backscribing process in device fabrication.

  17. High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, Christopher; Portnoff, Samuel [Widetronix Corp., Ithaca, New York 14850 (United States); Spencer, M. G. [Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850 (United States)

    2016-01-04

    Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P{sup +}N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH{sup 3}{sub x}) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm{sup 2}. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm{sup 2}, fill factor of 0.86, and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 10{sup 5}–10{sup 6 }cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P{sup +}N junction structure can mitigate some of the negative effects.

  18. Effect of Si addition on the glass-forming ability of a NiTiZrAlCu alloy

    International Nuclear Information System (INIS)

    Liang, W.Z.; Shen, J.; Sun, J.F.

    2006-01-01

    The effect of Si addition on the glass-forming ability (GFA) of a NiTiZrAlCu alloy was investigated by using differential scanning calorimetry (DSC), differential thermal analysis (DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The maximum diameter of glassy rods increased from 0.5 mm for the Ni 42 Ti 20 Zr 25 Al 8 Cu 5 alloy (the base alloy) to 2.5 mm for the Ni 42 Ti 20 Zr 21.5 Al 8 Cu 5 Si 3.5 alloy and to 3 mm for the Ni 42 Ti 19 Zr 22.5 Al 8 Cu 5 Si 3.5 alloy, when prepared by using the copper mould casting. The GFA of the alloys can be assessed by the reduced glass transition temperature T rg (=T g /T l ) and a newly proposed parameter, δ(=T x /T l - T g ). An addition of a proper amount of Si and a minor substitution of Ti with Zr can enhance the GFA of the base alloy by suppressing the formation of primary Ni(TiZr) and (TiZr)(CuAl) 2 phases and inducing the composition close to eutectic

  19. Derivative thermo analysis of the Al-Si cast alloy with addition of rare earths metals

    Directory of Open Access Journals (Sweden)

    M. Krupiński

    2010-01-01

    Full Text Available In this paper the dependence between chemical composition, structure and cooling rate of Al–Si aluminium cast alloy was investigated. For studying of the structure changes the thermo-analysis was carried out, using the UMSA (Universal Metallurgical Simulator and Analyzer device. For structure investigation optical and electron scanning microscopy was used, phase and chemical composition of the Al cast alloy also using qualitative point-wise EDS microanalysis.

  20. Influence of the Mo and W additions on the microstructure evolution and mechanical properties in Si-Cr spring steels

    International Nuclear Information System (INIS)

    Ban, Deok Young; Lee, Sang Lae; Nam, Won Jong

    1998-01-01

    Effects of the Mo and W additions to Si-Cr spring steels on the microstructural evolution and mechanical properties in spring steels were investigated. It was found that the Mo and/or W addition does not change the behavior of tempered carbide at low temperatures, such as the precipitation of ε-carbide and the conversion of ε-carbide to cementite, via dilatometry tests and the observation of microstructure using TEM. However, it would reduce the coarsening rate of cementite at high temperature above 450 .deg. C, resulting in the smaller size of cementite particles due to the lower diffusion rate. Since the sag resistance depends on the distribution and the size of precipitates, steel C(0.2% W) showed the strongest sag resistance whereas steel A showed the weakest sag resistance, when tempered at 450 .deg. C. Also, an abundance of precipitates at 350 deg. C tempering exhibits the maximum loop area, i.e., the sag resistance for all the tested steels. The Mo and W additions to Si-Cr spring steels raised the ratio of loop area/tensile strength. Therefore, the Mo and W additions would be effective method to increase the sag resistance as well as strength in Si-Cr spring steels

  1. Effects of combined additions of Sr and AlTiB grain refiners in hypoeutectic Al-Si foundry alloys

    International Nuclear Information System (INIS)

    Lu, L.; Dahle, A.K.

    2006-01-01

    Strontium is the most widely used and a very effective element for modifying the morphology of eutectic silicon, while Ti and B are commonly present in the commercial grain refiners used for Al-Si alloys. Systematic studies on the effects of combined additions of Sr and different AlTiB grain refiners on the Al + Si eutectic and primary aluminium solidification have been performed. While slight coarsening of both eutectic Si and primary aluminium grains occurs during holding, no obvious interactions are observed between Sr and AlTiB grain refiners when the addition level of grain refiners is low. As a result, a well-modified and grain refined structure was obtained. However, strong negative interactions between Sr and Al1.5Ti1.5B were observed as the addition level of the grain refiner increases. It was found that these interactions have a much more profound impact on the eutectic solidification than the primary Al solidification. The melt treated with combined additions of Sr and Al1.5Ti1.5B still shows good grain refinement efficiency even after losing its modification completely. The mechanism responsible for such negative interactions is further discussed

  2. Effects of combined additions of Sr and AlTiB grain refiners in hypoeutectic Al-Si foundry alloys

    Energy Technology Data Exchange (ETDEWEB)

    Lu, L. [CSIRO Minerals, P.O. Box 883, Kenmore, Qld. 4069 (Australia)]. E-mail: Liming.Lu@csiro.au; Dahle, A.K. [CRC for Cast Metals Manufacturing, Division of Materials, School of Engineering, University of Queensland, Brisbane, Qld. 4072 (Australia)

    2006-11-05

    Strontium is the most widely used and a very effective element for modifying the morphology of eutectic silicon, while Ti and B are commonly present in the commercial grain refiners used for Al-Si alloys. Systematic studies on the effects of combined additions of Sr and different AlTiB grain refiners on the Al + Si eutectic and primary aluminium solidification have been performed. While slight coarsening of both eutectic Si and primary aluminium grains occurs during holding, no obvious interactions are observed between Sr and AlTiB grain refiners when the addition level of grain refiners is low. As a result, a well-modified and grain refined structure was obtained. However, strong negative interactions between Sr and Al1.5Ti1.5B were observed as the addition level of the grain refiner increases. It was found that these interactions have a much more profound impact on the eutectic solidification than the primary Al solidification. The melt treated with combined additions of Sr and Al1.5Ti1.5B still shows good grain refinement efficiency even after losing its modification completely. The mechanism responsible for such negative interactions is further discussed.

  3. Sintering of Si C by hot-pressing with addition of Al2O3 and concentrate of rare earths

    International Nuclear Information System (INIS)

    Hwang, M.K.; Silva, C.R.M.

    2004-01-01

    Silicon carbide (SiC) has essentially covalent bonds (∼88%). The high covalency bond is responsible for the good mechanical properties, although it induces a low self diffusion coefficient, making densification more difficult. For a successful densification is necessary to apply pressure on the samples, and/or the addition of sintering additives, which improves the densification. In this SiC samples with alumina (Al2O3) and concentrate of rare earth (CRE) addition were sintered by hot pressing in argon atmospheric at 20 MPa of pressure, heating rate of 20 deg C/min up to 1800 deg C and a dwell time of 1 h. Initially the CRE was calcined at 1000 deg C during 1 h. After that, three mixtures were prepared with distinct concentrations in high energy mill and the samples were sintered. The aim of this work is to improve SiC densification by the liquid phase formation during sintering owing to the additives reactions between itself. The pressure intensify the driving force for densification, taking the liquid phase to drain easier through the grain boundaries, making possible best accommodation and rearrangement of the grains. The application of the pressure on the samples during sintering contributes to improve densification and becomes possible sintering in lower temperature than conventional one. The phases of the sintered samples were analyzed by X-ray diffraction and the morphology were verified by scanning electron microscopy. (author)

  4. The effects of Cu addition on the microstructure and thermal stability of an Al-Mg-Si alloy

    International Nuclear Information System (INIS)

    Man, Jin; Jing, Li; Jie, Shao Guang

    2007-01-01

    The effects of Cu addition on the microstructure and thermal stability of 6082 Al-Mg-Si alloys were investigated. The results show the Q' precipitates are formed when aged at 170 o C for 4 h in 6082 alloy with 0.6% Cu addition. The hardness value of the alloy with 0.6% Cu is always distinctly higher than that of the alloy without Cu during isothermal treatment at 250 o C. Based on the TEM and three-dimensional atom probe (3DAP) results, the thermal stability of the 6082 alloys with Cu addition is discussed with respect to the distribution of Cu

  5. Influence of Co addition on the magnetocaloric effect of FeCoSiAlGaPCB amorphous alloys

    OpenAIRE

    Franco García, Victorino; Borrego Moro, Josefa María; Conde Amiano, Alejandro

    2006-01-01

    The FeCoSiAlGaPCB alloys can be prepared as bulk amorphous materials, with outstanding mechanical properties and increased electrical resistivity. These features can be beneficial for their application as a magnetic refrigerant. The influence of Co addition on the magnetic entropy change of the alloy has been studied. This compositional modification displaces the temperature of the peak entropy change closer to room temperature, but reduces the refrigerant capacity of the material...

  6. Effect of SiO2 addition in the zirconia stabilization

    International Nuclear Information System (INIS)

    Pessoa, R.C.; Lima, U.R.; Nasar, M.C.; Nasar, R.S.; Yoshida, I.V.P.; Acchar, W.

    2006-01-01

    The aims of this work was investigated the zirconia stabilization with a mixture of resins based on silico nas promoting the Zr O 2 /Si O 2 formation. The powder was heated and characterized by TGA, DTA, FTIR, XRD and SEM/EDS. The results indicated the tetragonal and cubic phase formation stabilized at 1000 deg C/2 h. The increase of calcing temperature promoted decrease of stabilization. The amorphous silica calcined at 1000 deg C induced defects into the zirconia structure and favour the formation of more stable phases. The decrease of stabilization at high temperatures are related to growth of crystallite above of critical value. (author)

  7. Influence of SiO2 Addition on Properties of PTFE/TiO2 Microwave Composites

    Science.gov (United States)

    Yuan, Ying; Wang, Jie; Yao, Minghao; Tang, Bin; Li, Enzhu; Zhang, Shuren

    2018-01-01

    Composite substrates for microwave circuit applications have been fabricated by filling polytetrafluoroethylene (PTFE) polymer matrix with ceramic powder consisting of rutile TiO2 ( D 50 ≈ 5 μm) partially substituted with fused amorphous SiO2 ( D 50 ≈ 8 μm) with composition x vol.% SiO2 + (50 - x) vol.% TiO2 ( x = 0, 3, 6, 9, 12), and the effects of SiO2 addition on characteristics such as the density, moisture absorption, microwave dielectric properties, and thermal properties systematically investigated. The results show that the filler was well distributed throughout the matrix. High dielectric constant ( ɛ r > 7.19) and extremely low moisture absorption (ceramic particles served as barriers and improved the thermal stability of the PTFE polymer, retarding its decomposition. The temperature coefficient of dielectric constant ( τ ɛ ) of the composites shifted toward the positive direction (from - 309 ppm/°C to - 179 ppm/°C) as the SiO2 content was increased, while the coefficient of thermal expansion remained almost unchanged (˜ 35 ppm/°C).

  8. A high performance Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel

    Science.gov (United States)

    Li, Wei; Liu, Hongxia; Wang, Shulong; Wang, Qianqiong; Chen, Shupeng

    2017-06-01

    In this paper, a new Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel (Ge_DUTFET) is proposed and investigated by Silvaco-Atlas simulation. The line tunneling perpendicular to channel and point tunneling parallel to channel simultaneously occur on both sides of the gate. The Ge is chosen as the source region material to increase the line tunneling current. The designed heterojunction between the Ge source and Si channel decreases the point tunneling barrier width to enhance the point tunneling current. And this heterojunction can also promote the Ge_DUTFET to occur point tunneling at the small gate voltage, which makes it obtain the smaller turn-on voltage. Furthermore, the Si0.5Ge0.5 buffer layer is also helpful for the enhancement of performance. The simulation results reveal that Ge_DUTFET has the better performance compared with the Si_DUTFET. The on-state current and average subthreshold swing of Ge_DUTFET are 1.11 × 10-5A/μm and 35.1mV/dec respectively. The max cut-off frequency (fT) and gain bandwidth product (GBW) are 26.6 GHz and 16.6 GHz respectively. The fT and GBW of the Ge_DUTFET are respectively increased by ∼27.4% and ∼84.3% compared with the Si_DUTFET.

  9. The synergistic effect of Li addition on microstructure, texture and mechanical properties of extruded Al–Mg–Si alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ud Din, Shamas; Kamran, J. [Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering and Applied Sciences (PIEAS), Nilore, Islamabad, 45650 (Pakistan); Tariq, N.H., E-mail: naeem421@hotmail.com [Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering and Applied Sciences (PIEAS), Nilore, Islamabad, 45650 (Pakistan); Hasan, B.A. [Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering and Applied Sciences (PIEAS), Nilore, Islamabad, 45650 (Pakistan); Petrov, R.H.; Bliznuk, V. [Ghent University, Department of Materials Science and Engineering, Technologiepark 903, Gent (Belgium); Uz Zuha, Shamas [Department of Metallurgy and Materials Engineering, Pakistan Institute of Engineering and Applied Sciences (PIEAS), Nilore, Islamabad, 45650 (Pakistan)

    2016-05-01

    In the present work, 0, 1, 2 and 3 wt.% Li was added to conventional Al-0.9Mg-0.5Si alloy. The samples were extruded and aged to investigate the effect of Li addition on microstructure, texture and mechanical properties. The density of conventional alloy was reduced up to 7.8% while the ultimate tensile strength (UTS) increased by 62% with 3% Li addition. Electron backscatter diffraction (EBSD) revealed that Li addition effectively refined the grain size of the modified alloys. TEM/EDX and XRD analysis revealed the synergistic effect of Li addition which promoted the formation of nano-sized δ′(Al{sub 3}Li) precipitates when Li content is higher then 1%. The ageing trend first decreased for 1 wt.% Li addition and then increased with increasing Li content from 2 to 3 wt.% at the expense of ductility. The intensity of texture increased with the gradual increase in Li content from alloy-1 to 4. - Highlights: • Study of 0, 1, 2 and 3 wt.% Li on Al–Mg–Si alloys in extruded and T6 condition. • Density reduced to 7.8% with UTS increased by 62% for 3% Li addition. • Texture intensity increased with increase in Li content from alloy-1 to 4. • Property enhancement attributed to a refinement of δ′ (Al{sub 3}Li) precipitates.

  10. Texture and magnetic properties improvement of a 3% Si non-oriented electrical steel by Sb addition

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, Marcio Ferreira, E-mail: marciof.rodrigues@aperam.com [Aperam South America, Timóteo, MG (Brazil); Cunha, Marco Antonio da; Costa Paolinelli, Sebastião da [Aperam South America, Timóteo, MG (Brazil); Cota, André Barros [Physics Department—Universidade Federal de Ouro Preto, Redemat, Ouro Preto, MG (Brazil)

    2013-04-15

    The influence of small antimony addition and thermomechanical processing on the magnetic properties of a 3% Si steel was investigated. The samples were processed in the laboratory with 930 °C hot rolling finishing temperature, three different hot band thicknesses, hot band annealing at 1030 °C, cold rolling with three different reductions to 0.35 mm thickness and final annealing at 1030 °C. The results have shown that the best combination of core loss and magnetic induction can be obtained by Sb content of 0.045% and 76% cold rolling reduction, and that Eta/Gamma ratio is higher and grain size larger at this Sb content. -- Highlights: ► The Sb addition on the magnetic properties of a 3% Si steel was investigated. ► The 0.045% Sb and cold rolling reduction of 76% results in the best magnetic properties. ► Sb and cold rolling reduction results in a optimum final grain size and texture. ► The work was performed in a 3% Si non-oriented electrical steel.

  11. Effect of low cost iron oxide with Si additive on structural properties of Ni-Zn ferrite

    International Nuclear Information System (INIS)

    Ghazanfar, U.

    2010-01-01

    Mixed Ni-Zn ferrites (x = 0.66, 0.77, 0.88, 0.99) were prepared by double sintering ceramic method using locally available low cost Fe/sub 2/O/sub 3/ with 0.5% (by wt) of Si additive. The chemical phase analysis, carried out by X-ray powder diffraction method, confirms the major phase of Ni-Zn ferrite. Study of the effect of composition on structural properties of ferrite system revealed a decreasing trend of lattice parameters with increasing Ni content. X-ray density and mass density increase with increasing Ni content, which in turn decreases the porosity due to successive presence of Si in Fe/sub 2/O/sub 3/. This decrease in porosity along with chemical homogeneities, distribution of phases and grain formation were also observed in scanning electron micrographs. (author)

  12. Effects of Interface Coating and Nitride Enhancing Additive on Properties of Hi-Nicalon SiC Fiber Reinforced Reaction-Bonded Silicon Nitride Composites

    Science.gov (United States)

    Bhatt, Ramakrishana T.; Hull, David R.; Eldridge, Jeffrey I.; Babuder, Raymond

    2000-01-01

    Strong and tough Hi-Nicalon SiC fiber reinforced reaction-bonded silicon nitride matrix composites (SiC/ RBSN) have been fabricated by the fiber lay-up approach. Commercially available uncoated and PBN, PBN/Si-rich PBN, and BN/SiC coated SiC Hi-Nicalon fiber tows were used as reinforcement. The composites contained approximately 24 vol % of aligned 14 micron diameter SiC fibers in a porous RBSN matrix. Both one- and two-dimensional composites were characterized. The effects of interface coating composition, and the nitridation enhancing additive, NiO, on the room temperature physical, tensile, and interfacial shear strength properties of SiC/RBSN matrix composites were evaluated. Results indicate that for all three coated fibers, the thickness of the coatings decreased from the outer periphery to the interior of the tows, and that from 10 to 30 percent of the fibers were not covered with the interface coating. In the uncoated regions, chemical reaction between the NiO additive and the SiC fiber occurs causing degradation of tensile properties of the composites. Among the three interface coating combinations investigated, the BN/SiC coated Hi-Nicalon SiC fiber reinforced RBSN matrix composite showed the least amount of uncoated regions and reasonably uniform interface coating thickness. The matrix cracking stress in SiC/RBSN composites was predicted using a fracture mechanics based crack bridging model.

  13. Microprocessing of ITO and a-Si thin films using ns laser sources

    Science.gov (United States)

    Molpeceres, C.; Lauzurica, S.; Ocaña, J. L.; Gandía, J. J.; Urbina, L.; Cárabe, J.

    2005-06-01

    Selective ablation of thin films for the development of new photovoltaic panels and sensoring devices based on amorphous silicon (a-Si) is an emerging field, in which laser micromachining systems appear as appropriate tools for process development and device fabrication. In particular, a promising application is the development of purely photovoltaic position sensors. Standard p-i-n or Schottky configurations using transparent conductive oxides (TCO), a-Si and metals are especially well suited for these applications, appearing selective laser ablation as an ideal process for controlled material patterning and isolation. In this work a detailed study of laser ablation of a widely used TCO, indium-tin-oxide (ITO), and a-Si thin films of different thicknesses is presented, with special emphasis on the morphological analysis of the generated grooves. Excimer (KrF, λ = 248 nm) and DPSS lasers (λ = 355 and λ = 1064 nm) with nanosecond pulse duration have been used for material patterning. Confocal laser scanning microscopy (CLSM) and scanning electron microscopy (SEM) techniques have been applied for the characterization of the ablated grooves. Additionally, process parametric windows have been determined in order to assess this technology as potentially competitive to standard photolithographic processes. The encouraging results obtained, with well-defined ablation grooves having thicknesses in the order of 10 µm both in ITO and in a-Si, open up the possibility of developing a high-performance double Schottky photovoltaic matrix position sensor.

  14. Temperature dependent IDS–VGS characteristics of an N-channel Si tunneling field-effect transistor with a germanium source on Si(110) substrate

    International Nuclear Information System (INIS)

    Liu Yan; Yan Jing; Wang Hongjuan; Han Genquan

    2014-01-01

    We fabricated n-type Si-based TFETs with a Ge source on Si(110) substrate. The temperature dependent I DS –V GS characteristics of a TFET formed on Si(110) are investigated in the temperature range of 210 to 300 K. A study of the temperature dependence of I Leakage indicates that I Leakage is mainly dominated by the Shockley-Read-Hall (SRH) generation—recombination current of the n + drain—Si substrate junction. I ON increases monotonically with temperature, which is attributed to a reduction of the bandgap at the tunneling junction and an enhancement of band-to-band tunneling rate. The subthreshold swing S for trap assisted tunneling (TAT) current and band-to-band tunneling (BTBT) current shows the different temperature dependence. The subthreshold swing S for the TAT current degrades with temperature, while the S for BTBT current is temperature independent. (semiconductor devices)

  15. Effect of MoSi2 addition and particle size of SiC on pressureless sintering behavior and mechanical properties of ZrB2–SiC–MoSi2 composites

    Directory of Open Access Journals (Sweden)

    Mehri Mashhadi

    2016-07-01

    Full Text Available In the present paper, ZrB2–SiC–MoSi2 composites were prepared by pressureless sintering at temperatures of 2050, 2100 and 2150 °C for 1 h under argon atmosphere. In order to prepare composite samples, ZrB2 powder was milled for 2 h, then the reinforcing particles including of micron and nano-sized SiC powder were added. MoSi2 was added to ZrB2 from 0 to 5 wt.% as sintering aid. The mixtures were formed and, after the pyrolysis, they were sintered. Densification, microstructure and mechanical properties of ZrB2–SiC composites were investigated. The shrinkage of samples was measured, and the microstructure of samples was examined using scanning electron microscopy (SEM, equipped with EDS spectroscopy. In order to examine the oxidation behavior, the samples were heat treated at 1500 °C in air and then their weight changes were measured. Room temperature mechanical properties were examined. Mass fraction of MoSi2, particle size of SiC powder and sintering temperature have a great effect on relative density, porosity, shrinkage, hardness, fracture toughness, oxidation resistance and microstructure of these composites. The highest relative density, hardness, fracture toughness and weight changes of 98.7%, 16.17 GPa, 3 MPa m1/2 and 0.28%, respectively, were obtained in ZrB2–10 wt.%SiCnano–4 wt.%MoSi2 composites sintered at 2150 °C.

  16. Novel microstructural growth in the surface of Inconel 625 by the addition of SiC under electron beam melting

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, M., E-mail: maqomer@yahoo.com [Physics Division, Pakistan Institute of Nuclear Science and Technology (PINSTECH), P.O. Nilore, Islamabad (Pakistan); Ali, G.; Ahmed, Ejaz; Haq, M.A.; Akhter, J.I. [Physics Division, Pakistan Institute of Nuclear Science and Technology (PINSTECH), P.O. Nilore, Islamabad (Pakistan)

    2011-06-15

    Electron beam melting is being used to modify the microstructure of the surfaces of materials due to its ability to cause localized melting and supercooling of the melt. This article presents an experimental study on the surface modification of Ni-based superalloy (Inconel 625) reinforced with SiC ceramic particles under electron beam melting. Scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction techniques have been applied to characterize the resulted microstructure. The results revealed growth of novel structures like wire, rod, tubular, pyramid, bamboo and tweezers type morphologies in the modified surface. In addition to that fibrous like structure was also observed. Formation of thin carbon sheet has been found at the regions of decomposed SiC. Electron beam modified surface of Inconel 625 alloy has been hardened twice as compared to the as-received samples. Surface hardening effect may be attributed to both the formation of the novel structures as well as the introduction of Si and C atom in the lattice of Inconel 625 alloy.

  17. Novel microstructural growth in the surface of Inconel 625 by the addition of SiC under electron beam melting

    Science.gov (United States)

    Ahmad, M.; Ali, G.; Ahmed, Ejaz; Haq, M. A.; Akhter, J. I.

    2011-06-01

    Electron beam melting is being used to modify the microstructure of the surfaces of materials due to its ability to cause localized melting and supercooling of the melt. This article presents an experimental study on the surface modification of Ni-based superalloy (Inconel 625) reinforced with SiC ceramic particles under electron beam melting. Scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction techniques have been applied to characterize the resulted microstructure. The results revealed growth of novel structures like wire, rod, tubular, pyramid, bamboo and tweezers type morphologies in the modified surface. In addition to that fibrous like structure was also observed. Formation of thin carbon sheet has been found at the regions of decomposed SiC. Electron beam modified surface of Inconel 625 alloy has been hardened twice as compared to the as-received samples. Surface hardening effect may be attributed to both the formation of the novel structures as well as the introduction of Si and C atom in the lattice of Inconel 625 alloy.

  18. Novel microstructural growth in the surface of Inconel 625 by the addition of SiC under electron beam melting

    International Nuclear Information System (INIS)

    Ahmad, M.; Ali, G.; Ahmed, Ejaz; Haq, M.A.; Akhter, J.I.

    2011-01-01

    Electron beam melting is being used to modify the microstructure of the surfaces of materials due to its ability to cause localized melting and supercooling of the melt. This article presents an experimental study on the surface modification of Ni-based superalloy (Inconel 625) reinforced with SiC ceramic particles under electron beam melting. Scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction techniques have been applied to characterize the resulted microstructure. The results revealed growth of novel structures like wire, rod, tubular, pyramid, bamboo and tweezers type morphologies in the modified surface. In addition to that fibrous like structure was also observed. Formation of thin carbon sheet has been found at the regions of decomposed SiC. Electron beam modified surface of Inconel 625 alloy has been hardened twice as compared to the as-received samples. Surface hardening effect may be attributed to both the formation of the novel structures as well as the introduction of Si and C atom in the lattice of Inconel 625 alloy.

  19. Effect of Cr and Mn addition and heat treatment on AlSi3Mg casting alloy

    Energy Technology Data Exchange (ETDEWEB)

    Tocci, Marialaura, E-mail: m.tocci@unibs.it [Department of Mechanical and Industrial Engineering, University of Brescia, Via Branze 38, 25123 Brescia (Italy); Donnini, Riccardo, E-mail: riccardo.donnini@cnr.it [National Research Council of Italy (CNR), Institute of Condensed Matter Chemistry and Technologies for Energy (ICMATE), Via R. Cozzi 53, 20125 Milan (Italy); Angella, Giuliano, E-mail: giuliano.angella@cnr.it [National Research Council of Italy (CNR), Institute of Condensed Matter Chemistry and Technologies for Energy (ICMATE), Via R. Cozzi 53, 20125 Milan (Italy); Pola, Annalisa, E-mail: annalisa.pola@unibs.it [Department of Mechanical and Industrial Engineering, University of Brescia, Via Branze 38, 25123 Brescia (Italy)

    2017-01-15

    In the present paper the effect of heat treatment on an AlSi3Mg alloy with and without Cr and Mn addition was investigated. Beside the well-known modification of the morphology of Fe-containing intermetallics, it was found that Cr and Mn allowed the formation of dispersoids in the aluminium matrix after solution heat treatment at 545 °C, as shown by scanning transmission electron microscope observations. These particles were responsible of the enhanced Vickers microhardness of the aluminium matrix in comparison with the base alloy after solution treatment and quenching, according to dispersion hardening mechanism. The presence of these particles was not affected by ageing treatment, which instead allowed the precipitation of β-Mg{sub 2}Si, as shown by the elaboration of differential scanning calorimeter curves. The formation of dispersoids and the study of their effect on mechanical properties can represent an interesting development for applications at high temperatures of casting alloys due to their thermal stability compared to other strengthening phases as β-Mg{sub 2}Si. - Highlights: •Cr and Mn successfully modified the morphology of Fe-containing intermetallics. •Cr- and Mn-dispersoids formed in the aluminium matrix during solution treatment. •Dispersion hardening was detected after solution treatment for Cr-containing alloy. •The dispersion hardening effect was maintained after ageing treatment.

  20. Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Abe, Y.; Umeda, T.; Okamoto, M.; Kosugi, R.; Harada, S.; Haruyama, M.; Kada, W.; Hanaizumi, O.; Onoda, S.; Ohshima, T.

    2018-01-01

    We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

  1. Reduction in secondary dendrite arm spacing in cast eutectic Al-Si piston alloys by cerium addition

    Science.gov (United States)

    Ahmad, R.; Asmael, M. B. A.; Shahizan, N. R.; Gandouz, S.

    2017-01-01

    The effects of Ce on the secondary dendrite arm spacing (SDAS) and mechanical behavior of Al-Si-Cu-Mg alloys were investigated. The reduction of SDAS at different Ce concentrations was evaluated in a directional solidification experiment via computer-aided cooling curve thermal analysis (CA‒CCTA). The results showed that 0.1wt%-1.0wt% Ce addition resulted in a rapid solidification time, Δ t s, and low solidification temperature, Δ T S, whereas 0.1wt% Ce resulted in a fast solidification time, Δ t a-Al, of the α-Al phase. Furthermore, Ce addition refined the SDAS, which was reduced to approximately 36%. The mechanical properties of the alloys with and without Ce were investigated using tensile and hardness tests. The quality index ( Q) and ultimate tensile strength of (UTS) Al-Si-Cu-Mg alloys significantly improved with the addition of 0.1wt% Ce. Moreover, the base alloy hardness was improved with increasing Ce concentration.

  2. Effect of Zn addition on microstructure and mechanical properties of an Al–Mg–Si alloy

    Directory of Open Access Journals (Sweden)

    Lizhen Yan

    2014-04-01

    Full Text Available In the present work, an Al–0.66Mg–0.85Si–0.2Cu alloy with Zn addition was investigated by electron back scattering diffraction (EBSD, high resolution electron microscopy (HREM, tensile and Erichsen tests. The mechanical properties of the alloy after pre-aging met the standards of sheet forming. After paint baking, the yield strength of the alloy was improved apparently. GP(II zones and ηʹ phases were formed during aging process due to Zn addition. With the precipitation of GP zones, β″ phases, GP(II zones and ηʹ phases, the alloys displayed excellent mechanical properties.

  3. Effect of SiC whisker addition on the microstructures and mechanical properties of Ti(C, N)-based cermets

    International Nuclear Information System (INIS)

    Wu, Peng; Zheng, Yong; Zhao, Yongle; Yu, Haizhou

    2011-01-01

    Ti(C, N)-based cermets with addition of SiC whisker (SiC w ) were prepared by vacuum sintering. The microstructures of the prepared cermets were investigated by using X-ray diffractometry (XRD) and scanning electron microscopy (SEM). Mechanical properties such as transverse rupture strength (TRS), fracture toughness (K IC ) and hardness (HRA) were also measured. It was found that the grain size of the cermets was affected by the SiC whisker addition. The cermets with 1.0 wt.% SiC whisker addition exhibited the smallest grain size. The porosities of the cermets increased with increasing SiC whisker additions. The addition of the SiC whisker had no influence on the phase constituents of the cermets. Compared with the cermets with no whisker addition, the highest TRS and fracture toughness for cermets with 1.0 wt.% SiC whisker addition increased by about 24% and 29%, respectively. The strengthening mechanisms were attributed to finer grain size, homogeneous microstructure and moderate thickness of rim phase. The toughening mechanisms were characterized by crack deflection, whisker bridging and whisker pulling-out.

  4. Additional evaluation of alpha induced neutron production nuclear data. 9Be, 27Al, 28,29,30Si

    International Nuclear Information System (INIS)

    Murata, Toru; Shibata, Keiichi

    2005-01-01

    Alpha particle induced neutron production cross sections, emitted neutron energy spectrum and angular distributions were evaluated for the target nucleus 9 Be, 27 Al and Si isotopes; 28 Si, 29 Si and 30 Si in the incident energy region below 15 MeV. (author)

  5. Optimization of heat treatment parameters for additive manufacturing and gravity casting AlSi10Mg alloy

    Science.gov (United States)

    Girelli, L.; Tocci, M.; Montesano, L.; Gelfi, M.; Pola, A.

    2017-11-01

    Additive manufacturing of metals is a production process developed in the last few years to realize net shape components with complex geometry and high performance. AlSi10Mg is one of the most widely used aluminium alloys, both in this field and in conventional foundry processes, for its significant mechanical properties combined with good corrosion resistance. In this paper the effect of heat treatment on AlSi10Mg alloy was investigated. Solution and ageing treatments were carried out with different temperatures and times on samples obtained by direct metal laser sintering and gravity casting in order to compare their performance. Microstructural analyses and hardness tests were performed to investigate the effectiveness of the heat treatment. The results were correlated to the sample microstructure and porosity, analysed by means of optical microscopy and density measurements. It was found that, in the additive manufactured samples, the heat treatment can reduce significantly the performance of the alloy also because of the increase of porosity due to entrapped gas during the deposition technique and that the higher the solution temperature the higher the increase of such defects. A so remarkable effect was not found in the conventional cast alloy.

  6. The Effects of Al and Ti Additions on the Structural Stability, Mechanical and Electronic Properties of D8m-Structured Ta5Si3

    Directory of Open Access Journals (Sweden)

    Linlin Liu

    2016-05-01

    Full Text Available In the present study, the influence of substitutional elements (Ti and Al on the structural stability, mechanical properties, electronic properties and Debye temperature of Ta5Si3 with a D8m structure were investigated by first principle calculations. The Ta5Si3 alloyed with Ti and Al shows negative values of formation enthalpies, indicating that these compounds are energetically stable. Based on the values of formation enthalpies, Ti exhibits a preferential occupying the Ta4b site and Al has a strong site preference for the Si8h site. From the values of the bulk modulus (B, shear modulus (G and Young’s modulus (E, we determined that both Ti and Al additions decrease both the shear deformation resistance and the elastic stiffness of D8m structured Ta5Si3. Using the shear modulus/bulk modulus ratio (G/B, Poisson’s ratio (υ and Cauchy’s pressure, the effect of Ti and Al additions on the ductility of D8m-structured Ta5Si3 are explored. The results show that Ti and Al additions reduce the hardness, resulting in solid solution softening, but improve the ductility of D8m-structured Ta5Si3. The electronic calculations reveal that Ti and Al additions change hybridization between Ta-Si and Si-Si atoms for the binary D8m-structured Ta5Si3. The new Ta-Al bond is weaker than the Ta-Si covalent bonds, reducing the covalent property of bonding in D8m-structured Ta5Si3, while the new strong Ti4b-Ti4b anti-bonding enhances the metallic behavior of the binary D8m-structured Ta5Si3. The change in the nature of bonding can well explain the improved ductility of D8m-structured Ta5Si3 doped by Ti and Al. Moreover, the Debye temperatures, ΘD, of D8m-structured Ta5Si3 alloying with Ti and Al are decreased as compared to the binary Ta5Si3.

  7. The influence of SiO2 Addition on 2MgO-Al2O3-3.3P2O5 Glass

    DEFF Research Database (Denmark)

    Larsen, P.H.; Poulsen, F.W.; Berg, Rolf W.

    1999-01-01

    2MgO-Al2O3-3.3P2O5 glasses with increasing amounts of SiO2 are considered for sealing applications in Solid Oxide Fuel Cells (SOFC). The change in chemical durability under SOFC anode conditions and the linear thermal expansion is measured as functions of the SiO2 concentration. Raman spectroscopy...... analysis of the glasses reveals no sign of important changes in the glass structure upon SiO2 addition. Some increase in glass durability with SiO2 concentration is reported and its cause is discussed....

  8. Prediction of 4H–SiC betavoltaic microbattery characteristics based on practical Ni-63 sources

    International Nuclear Information System (INIS)

    Gui, Gui; Zhang, Kan; Blanchard, James P.; Ma, Zhenqiang

    2016-01-01

    We have investigated the performance of 4H–SiC betavoltaic microbatteries under exposure to the practical Ni-63 sources using the Monte Carlo method and Synopsys® Medici device simulator. A typical planar p–n junction betavoltaic device with the Ni-63 source of 20% purity on top is modeled in the simulation. The p–n junction structure includes a p+ layer, a p− layer, an n+ layer, and an n− layer. In order to obtain an accurate and valid predication, our simulations consider several practical factors, including isotope impurities, self-absorption, and full beta energy spectra. By simulating the effects of both the p–n junction configuration and the isotope source thickness on the battery output performance, we have achieved the optimal design of the device and maximum energy conversion efficiency. Our simulation results show that the energy conversion efficiency increases as the doping concentration and thickness of the p− layer increase, whereas it is independent of the total depth of the p–n junction. Furthermore, the energy conversion efficiency decreases as the thickness of the practical Ni-63 source increases, because of self-absorption in the isotope source. Therefore, we propose that a p–n junction betavoltaic cell with a thicker and heavily doped p− layer under exposure to a practical Ni-63 source with an appreciable thickness could produce the optimal energy conversion efficiency. - Highlights: • Different thicknesses of Ni-63 isotope sources with 20% purity were employed. • A self-absorption model was constructed for the beta energy spectra of Ni-63 sources. • The optimization strategies for betavoltaic microbatteries were outlined.

  9. Development ceramic composites based on Al2O3, SiO2 and IG-017 additive

    Science.gov (United States)

    Kurovics, E.; Shmakova, A.; Kanev, B.; Gömze, L. A.

    2017-02-01

    Based on high purity alumina and quartz powders and IG-017 bio-original additives the authors have developed new ceramic composite materials for different industrial purposes. The main goal was to fine a material and morphological structures of high performance ceramic composites as frames for development complex materials for extreme consumptions in the future. For this the mixed powders of Al2O3 , SiO2 and IG-017 bio-original additive were uniaxially pressed at different compaction pressures into disc shapes and were sintered in electric kiln under air (1) and nitrogrn (2) atmosphere. The grain size distributions of the raw materials were determined by laser granulometry. There thermo-physical properties were also determined by derivatography. The prepared and sintered specimens were tested on geometrical sizes, microstructure and morphology by scanning electron microscopy, porosity and water absorption. In this work the authors present the results of their research and investigation.

  10. Synthesis of high-performance Li2FeSiO4/C composite powder by spray-freezing/freeze-drying a solution with two carbon sources

    Science.gov (United States)

    Fujita, Yukiko; Iwase, Hiroaki; Shida, Kenji; Liao, Jinsun; Fukui, Takehisa; Matsuda, Motohide

    2017-09-01

    Li2FeSiO4 is a promising cathode active material for lithium-ion batteries due to its high theoretical capacity. Spray-freezing/freeze-drying, a practical process reported for the synthesis of various ceramic powders, is applied to the synthesis of Li2FeSiO4/C composite powders and high-performance Li2FeSiO4/C composite powders are successfully synthesized by using starting solutions containing both Indian ink and glucose as carbon sources followed by heating. The synthesized composite powders have a unique structure, composed of Li2FeSiO4 nanoparticles coated with a thin carbon layer formed by the carbonization of glucose and carbon nanoparticles from Indian ink. The carbon layer enhances the electrochemical reactivity of the Li2FeSiO4, and the carbon nanoparticles play a role in the formation of electron-conducting paths in the cathode. The composite powders deliver an initial discharge capacity of 195 and 137 mAh g-1 at 0.1 C and 1 C, respectively, without further addition of conductive additive. The discharge capacity at 1 C is 72 mAh g-1 after the 100th cycle, corresponding to approximately 75% of the capacity at the 2nd cycle.

  11. Thermal balance of a LPG fuelled, four stroke SI engine with water addition

    International Nuclear Information System (INIS)

    Ozcan, Hakan; Soeylemez, M.S.

    2006-01-01

    The effect of water injection on a spark ignition engine thermal balance and performance has been experimentally investigated. A four stroke, four cylinder conventional engine was used with LPG (liquid petroleum gas) as fuel. Different water to fuel ratios by mass were used with variable engine speed ranging from 1000 to 4500 rpm. The results showed that as the water injection level to the engine increased, the percentage of useful work increased, while the losses other than unaccounted losses decreased. Additionally, the specific fuel consumption decreases, while the engine thermal efficiency increases. The average increase in the brake thermal efficiency for a 0.5 water to fuel mass ratio is approximately 2.7% over the use of LPG alone for the engine speed range studied

  12. Formation of aluminum titanate with small additions of MgO and SiO2

    International Nuclear Information System (INIS)

    Guedes-Silva, Cecilia Chaves; Ferreira, Thiago dos Santos; Genova, Luis Antonio; Carvalho, Flavio Machado de Souza

    2016-01-01

    The formation of aluminum titanate was investigated by isothermal treatments of samples obtained from equimolar mixtures of alumina and titania, containing small amounts of silica and magnesia. Results of differential thermal analysis and Rietveld refinements of data collected by X-ray powder diffraction (XRPD) showed that additions of silica in amounts used in this work did not influence the formation of aluminum titanate. However, the presence of magnesia favored the formation of aluminum titanate in two steps, first one by incorporating Mg 2+ into Al 2 TiO 5 lattice during its initial formation, and the second one by accelerating the Al 2 TiO 5 formation, contributing to large quantities of this phase. MgO doped samples have also developed a more suitable microstructure for stabilizing of Al 2 TiO 5 , what make them promising for applications such as thermal barriers, internal combustion engines and support material for catalyst. (author)

  13. Experimental study on SI engine fuelled with butanol–gasoline blend and H2O addition

    International Nuclear Information System (INIS)

    Feng, Renhua; Yang, Jing; Zhang, Daming; Deng, Banglin; Fu, Jianqin; Liu, Jingping; Liu, Xiaoqiang

    2013-01-01

    Highlights: • Ignition timing has been optimized. • 1% H 2 O has been added. • Positive results have been achieved in engine torque, BSEC, CO emissions and HC emissions. • NOx and CO 2 emissions go up. - Abstract: An experimental study was conducted on a single cylinder motorcycle engine for two operating modes of full load and partial load at 6500 rpm and 8500 rpm with pure gasoline and 35% volume butanol–gasoline blend. The engine ignition timing for 35% volume butanol–gasoline blend has been optimized, and 1% volume H 2 O has also been added to the butanol–gasoline blend fuel. Engine performance parameters, fuel economy and emissions have been measured and analyzed. The experimental results showed that engine torque, BSEC, CO emissions and HC emissions are better than that of pure gasoline at both full load and partial load with 35% volume butanol and 1% H 2 O addition, combined with the modified ignition timing. But NOx and CO 2 emissions are worse than that of the original level of pure gasoline

  14. Structure and soft magnetic properties of Fe-Si-B-P-Cu nanocrystalline alloys with minor Mn addition

    Directory of Open Access Journals (Sweden)

    Xingjie Jia

    2018-05-01

    Full Text Available Addition of minor Mn effectively improves the amorphous-forming ability and thermal stability of the Fe85Si2B8P4Cu1 alloy. With increasing the Mn content from 0 to 3 at.%, the critical thickness for amorphous formation and onset temperature of the primary crystallization increase from 14 μm and 659 K to 27 μm and 668 K, respectively. The fine nanocrystalline structure with α-Fe grains in size (D of < 20 nm was obtained for the annealed amorphous alloys, which show excellent soft magnetic properties. The alloying of Mn reduces the coercivity (Hc by decreasing the D value and widens the optimum annealing temperature range for obtaining low Hc, although the saturation magnetic flux density (Bs is decreased slightly. The Fe83Mn2Si2B8P4Cu1 nanocrystalline alloy possesses fine structure with a D of ∼17.5 nm, and exhibits a high Bs of ∼1.75 T and a low Hc of ∼5.9 A/m. The mechanism related to the alloying effects on the structure and magnetic properties was discussed in term of the crystallization activation energy.

  15. Structure and soft magnetic properties of Fe-Si-B-P-Cu nanocrystalline alloys with minor Mn addition

    Science.gov (United States)

    Jia, Xingjie; Li, Yanhui; Wu, Licheng; Zhang, Wei

    2018-05-01

    Addition of minor Mn effectively improves the amorphous-forming ability and thermal stability of the Fe85Si2B8P4Cu1 alloy. With increasing the Mn content from 0 to 3 at.%, the critical thickness for amorphous formation and onset temperature of the primary crystallization increase from 14 μm and 659 K to 27 μm and 668 K, respectively. The fine nanocrystalline structure with α-Fe grains in size (D) of < 20 nm was obtained for the annealed amorphous alloys, which show excellent soft magnetic properties. The alloying of Mn reduces the coercivity (Hc) by decreasing the D value and widens the optimum annealing temperature range for obtaining low Hc, although the saturation magnetic flux density (Bs) is decreased slightly. The Fe83Mn2Si2B8P4Cu1 nanocrystalline alloy possesses fine structure with a D of ˜17.5 nm, and exhibits a high Bs of ˜1.75 T and a low Hc of ˜5.9 A/m. The mechanism related to the alloying effects on the structure and magnetic properties was discussed in term of the crystallization activation energy.

  16. Effects of Ti addition and heat treatments on mechanical and electrical properties of Cu-Ni-Si alloys

    Science.gov (United States)

    Kim, Hyung Giun; Lee, Taeg Woo; Kim, Sang Min; Han, Seung Zeon; Euh, Kwangjun; Kim, Won Yong; Lim, Sung Hwan

    2013-01-01

    The mechanical and electrical properties of Cu-5.98Ni-1.43Si and Cu-5.98Ni-1.29Si-0.24Ti alloys under heat treatment at 400 and 500 °C after hot- and cold-rolling were investigated, and a microstructural analysis using transmission electron microscopy was performed. Cu-5.98Ni-1.29Si-0.24Ti alloy displayed the combined Vickers hardness/electrical conductivity value of 315.9 Hv/57.1%IACS. This was attributed to a decrease of the solution solubility of Ni and Si in the Cu matrix by the formation of smaller and denser δ-Ni2Si precipitates. Meanwhile, the alloyed Ti was detected in the coarse Ni-Si-Ti phase particles, along with other large Ni-Si phase particles, in Cu-5.98Ni-1.29Si-0.24Ti.

  17. Effect of Y addition on crystallization behavior and soft-magnetic properties of Fe{sub 78}Si{sub 9}B{sub 13} ribbons

    Energy Technology Data Exchange (ETDEWEB)

    Zhanwei, Liu; Dunbo, Yu, E-mail: yudb2008@126.com; Kuoshe, Li; Yang, Luo; Chao, Yuan; Zilong, Wang; Liang, Sun; Kuo, Men

    2017-08-15

    Highlights: • Thermal stability of Fe-Si-B amorphous alloy is enhanced by Y addition. • Y addition can improve soft magnetic properties of Fe-Si-B amorphous alloy. • Decomposition of metastable Fe{sub 3}B phase is related to Y content in Fe-Si-B matrix. - Abstract: A series of amorphous Fe-Si-B ribbons with various Y addition were prepared by melt-spinning. The effect of Y addition on crystallization behavior, thermal and magnetic properties was systematically investigated. With the increase of Y content, the initial crystallization temperature shifted to a higher temperature, indicating that the thermal stability of amorphous state in Fe-Si-B-Y ribbon is enhanced compared to that of Fe-Si-B alloy. Meanwhile, compared to the two exothermic peaks in the samples with lower Y content, a new exothermic peak was found in the ribbons with Y content higher than 1 at%, which corresponded to the decomposition of metastable Fe{sub 3}B phase. Among all the alloys, Fe{sub 76.5}Si{sub 9}B{sub 13}Y{sub 1.5} alloy exhibits optimized magnetic properties, with high saturation magnetization M{sub s} of 187 emu/g and low coercivity H{sub cJ} of 7.6 A/m.

  18. MOCVD of hexagonal boron nitride thin films on Si(100) using new single source precursors

    CERN Document Server

    Boo, J H; Yu, K S; Kim, Y S; Kim, Y S; Park, J T

    1999-01-01

    We have been carried out the growth of hexagonal boron nitride (h-BN) thin films on Si(100) substrates by low pressure metal-organic chemical vapor deposition (LPMOCVD) method using triethylborane tert-butylamine complex (TEBTBA), Et sub 3 BNH sub 2 ( sup t Bu), and triethylborane isopropylamine complex (TEBIPA), Et sub 3 BNH sub 2 ( sup t Pr) as a new single molecular precursors in the temperature range of 850 approx 1000 .deg. C. polycrystalline, crack-free h-BN film was successfully grown on Si(100) substrate at 850 .deg. C using TEBTBA. This growth temperature is very lower than those in previous reports. Carbon-rich polycrystalline BN was also obtained at 900 .deg. C from TEBIPA. With increasing substrate temperature to 1000 .deg. C, however, BC sub 4 N-like species are strongly formed along with h-BN and the BN films obtained from both TEBTBA and TEBIPA but almost polycrystalline. To our best knowledge, this is the first report of the growth of h-BN films formed with the new single source precursors of ...

  19. Numerical investigation of FAST powder consolidation of Al2O3 and additive free β-SiC

    International Nuclear Information System (INIS)

    Allen, J B; Cornwell, C F; Carlson, T; Marsh, C P

    2015-01-01

    In this work we examine ceramic synthesis through powder consolidation and the field assisted sintering technique. In particular, we investigate the sintering of Al 2 O 3 and additive free β−SiC from both an experimental and numerical perspective. For the numerical model, the continuum theory of sintering model is employed, and the densification mechanisms corresponding to power law creep and grain boundary diffusion are considered. Experiments are used for comparison and validation purposes. The results indicate that in general, the densification kinetics simulated by the numerical model compare favorably with the experimental results. Parametric studies involving initial grain size, heating rate, and applied stress are also examined using the numerical model, and confirm many of the expected results from previous research, including increased densification due to higher heating rates, smaller grain sizes, and increased applied loading conditions. (paper)

  20. Influence of CaCO3 and SiO2 additives on magnetic properties of M-type Sr ferrites

    Science.gov (United States)

    Huang, Ching-Chien; Jiang, Ai-Hua; Hung, Yung-Hsiung; Liou, Ching-Hsuan; Wang, Yi-Chen; Lee, Chi-Ping; Hung, Tong-Yin; Shaw, Chun-Chung; Kuo, Ming-Feng; Cheng, Chun-Hu

    2018-04-01

    An experiment was carried out to investigate the influence of CaCO3 and SiO2 additives on the magnetic and physical properties of M-type Sr ferrites by changing experimental parameters such as the additive composition and Ca/Si ratio. Specimens were prepared by conventional ceramic techniques. It was found that the magnetic properties (Br = 4.42 kG, iHc = 3.32 kOe and (BH)max = 4.863 MGOe) were considerably improved upon adding CaCO3 = 1.1% and SiO2 = 0.4 wt% together with Co3O4, and the mechanical properties thereof were acceptable for motor applications. It was revealed that CaCO3 and SiO2 additives led to an upswing in the magnetic properties via the enhancement of uniform grain growth, particle alignment, and the densification of Sr ferrite.

  1. Les objets mobiliers des XIXe et XXe siècles : les sources

    Directory of Open Access Journals (Sweden)

    Laurence de Finance

    2009-11-01

    Full Text Available L’étude scientifique de tout objet ne peut se concevoir sans une recherche dans les sources documentaires. Qu’il s’agisse d’archives publiques ou privées, de legs faits à des musées ou autres institutions patrimoniales, la quête de renseignements est une nécessité pour suivre l’objet étudié depuis sa création jusqu’à son étude faite in Situ. De nos jours, de nombreuses ressources sont mises en ligne, notamment sur le site du ministère de la culture et de la communication ; accessibles à tous, elles rendent plus aisées la localisation des sources et la consultation de leur contenu. A titre d’exemple, afin de faciliter l’étude du mobilier religieux du XIXe siècle, dont la production est alors en pleine expansion, des pages illustrées de plusieurs catalogues de fabricants sont aujourd’hui consultables en ligne.The scientific study of any object requires research in documentary sources. Whether these are private or public archives, legacies left to museums or other heritage institutions, the search for information is a necessity for understanding the life of the object, from its creation to its study in situ. Today, many types of documentary source are available on line, in particular on the website of the French Ministry of Culture. These sources are available to all and easy to consult. The example presented here, concerning the study of religious furnishings of the 19th and 20th centuries, the production of which increased considerably during these centuries, are the pages taken from the catalogues of several manufacturers of these church furnishings, today accessible on line.

  2. Effect of Cr, Ti, V, and Zr Micro-additions on Microstructure and Mechanical Properties of the Al-Si-Cu-Mg Cast Alloy

    Science.gov (United States)

    Shaha, S. K.; Czerwinski, F.; Kasprzak, W.; Friedman, J.; Chen, D. L.

    2016-05-01

    Uniaxial static and cyclic tests were used to assess the role of Cr, Ti, V, and Zr additions on properties of the Al-7Si-1Cu-0.5Mg (wt pct) alloy in as-cast and T6 heat-treated conditions. The microstructure of the as-cast alloy consisted of α-Al, eutectic Si, and Cu-, Mg-, and Fe-rich phases Al2.1Cu, Al8.5Si2.4Cu, Al5.2CuMg4Si5.1, and Al14Si7.1FeMg3.3. In addition, the micro-sized Cr/Zr/Ti/V-rich phases Al10.7SiTi3.6, Al6.7Si1.2TiZr1.8, Al21.4Si3.4Ti4.7VZr1.8, Al18.5Si7.3Cr2.6V, Al7.9Si8.5Cr6.8V4.1Ti, Al6.3Si23.2FeCr9.2V1.6Ti1.3, Al92.2Si16.7Fe7.6Cr8.3V1.8, and Al8.2Si30.1Fe1.6Cr18.8V3.3Ti2.9Zr were present. During solution treatment, Cu-rich phases were completely dissolved, while the eutectic silicon, Fe-, and Cr/Zr/Ti/V-rich intermetallics experienced only partial dissolution. Micro-additions of Cr, Zr, Ti, and V positively affected the alloy strength. The modified alloy in the T6 temper during uniaxial tensile tests exhibited yield strength of 289 MPa and ultimate tensile strength of 342 MPa, being significantly higher than that for the Al-Si-Cu-Mg base. Besides, the cyclic yield stress of the modified alloy in the T6 state increased by 23 pct over that of the base alloy. The fatigue life of the modified alloy was substantially longer than that of the base alloy tested using the same parameters. The role of Cr, Ti, V, and Zr containing phases in controlling the alloy fracture during static and cyclic loading is discussed.

  3. Effects of Na2WO4 and Na2SiO3 additives in electrolytes on microstructure and properties of PEO coatings on Q235 carbon steel

    International Nuclear Information System (INIS)

    Wang Yunlong; Jiang Zhaohua; Yao Zhongping

    2009-01-01

    Ceramic coatings were achieved on Q235 carbon steel by plasma electrolytic oxidation in aluminate system with and without Na 2 WO 4 and Na 2 SiO 3 additives in electrolyte. Influence of Na 2 WO 4 and Na 2 SiO 3 on surface morphology, phase and elemental composition of PEO coatings were examined by means of scanning electron microscope (SEM), thin-film X-ray diffraction (TF-XRD) and energy dispersive X-ray spectroscopy (EDS). Effects of the two additives on the properties of the coatings including surface roughness, surface micro hardness and friction coefficient were studied. The results showed that W from Na 2 WO 4 and Si from Na 2 SiO 3 in electrolytes entered into the coatings. Na 2 WO 4 additive had no evident effect on phase composition of the coating, while Na 2 SiO 3 additive resulted in the coating changing from crystalline state to amorphous state and increased the content of P in the coating. Both additives reduced the surface roughness of the coatings. With Na 2 WO 4 or Na 2 SiO 3 into the electrolytes, the surface micro hardness of the coating was enhanced to 1433 and 1478, respectively, and the friction coefficients were also decreased to below 0.1.

  4. The influence of Ni addition and hot-extrusion on the microstructure and tensile properties of Al–15%Mg2Si composite

    International Nuclear Information System (INIS)

    Emamy, M.; Khodadadi, M.; Honarbakhsh Raouf, A.; Nasiri, N.

    2013-01-01

    Highlights: ► Ni content on the microstructure and tensile properties of Al–Mg 2 Si composite. ► Ni changed the size of primary Mg 2 Si from 42 μm to 17 μm. ► Higher UTS and elongation values obtained by addition of 5 wt% Ni. ► Fracture behavior changed from brittle to ductile by Ni addition and extrusion. - Abstract: The effects of nickel addition and hot-extrusion on the microstructure and tensile properties of in situ Al–15%Mg 2 Si composite specimens have been investigated. Al–15%Mg 2 Si composite ingots were prepared by an in situ process and different amounts of nickel (0.1, 0.3, 0.5, 1.0, 3.0 and 5.0 wt% Ni) were added to the remelted composite. Optical microscopy (OM) and scanning electron microscopy (SEM) indicated that Ni addition changes the morphology of both primary and eutectic Mg 2 Si phases and decreases the size of primary Mg 2 Si particles from 42 μm to 17 μm. Hot-extrusion was found to be powerful in breaking the eutectic network and changing the size and morphology of pseudo-eutectic Mg 2 Si phase. The results obtained from tensile testing revealed that both Ni addition and hot-extrusion process improve ultimate tensile strength (UTS) and elongation values. Fracture surface examinations revealed a transition from brittle fracture mode in as-cast composite to ductile fracture in hot-extruded composite after Ni addition. This can be attributed to the changes in size and morphology of primary and eutectic Mg 2 Si phases and also the formation of more and finer α-Al phase

  5. Effect of TiO2 addition on reaction between SiC and Ni in SiC-Ni cermet spray coatings. Part 2. ; Development of SiC-based cermet spray coatings. SiC-Ni yosha himakuchu no SiC-Ni kaimen hanno ni oyobosu TiO2 tenka no koka. 2. ; SiC-ki sametto yosha himaku no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, T [Kumano Technical College, Mie (Japan); Oki, S; Goda, S [Kinki Univ., Higashi-Osaka, Osaka (Japan). Faculty of Science and Technology

    1992-09-30

    The depression of the reaction between SiC and Ni, by adding TiO2 powder in spraying powder which has caused uniform dispersion in spray coating and reduction of TiO2 by the reaction during spraying, was studied. The mass ratio of the mixed components has been, SiC:Ni:TiO2=3:2:1. The spray coating was examined by electron prove microanalysis as well as X-ray diffractometry, centering mainly to the SiC-metal interface reaction. The formation of Ni-Si compounds have been depressed by the addition of TiO2 to spraying powder and by using plasma gas containing H2. Reason for this has been that the TiC formed in the SiC-Ni interface has depressed the reaction at the SiC-Ni interface. Further, TiO2 is reduced during spraying, and TiC is thought to be formed by the reaction between Ti and SiC or reaction between TiO2 and SiC. 8 refs., 6 figs., 1 tab.

  6. Additive effect of BPA and Gd-DTPA for application in accelerator-based neutron source

    International Nuclear Information System (INIS)

    Yoshida, F.; Yamamoto, T.; Nakai, K.; Zaboronok, A.; Matsumura, A.

    2015-01-01

    Because of its fast metabolism gadolinium as a commercial drug was not considered to be suitable for neutron capture therapy. We studied additive effect of gadolinium and boron co-administration using colony forming assay. As a result, the survival of tumor cells with additional 5 ppm of Gd-DTPA decreased to 1/10 compared to the cells with boron only. Using gadolinium to increase the effect of BNCT instead of additional X-ray irradiation might be beneficial, as such combination complies with the short-time irradiation regimen at the accelerator-based neutron source. - Highlights: • Gd-DTPA is widely clinically used as a contrast medium for MRI. • Shift to an accelerator-based neutron source is advantageous for gadolinium NCT. • Boron–gadolinium NCT effects on tumor cell lines were significant. • Additional administration of Gd-DTPA might enhance the effect of BPA–BNCT.

  7. Study on the Formation of Reaction Phase to Si Addition in Boron Steel Hot-Dipped in Al–7Ni Alloy

    Directory of Open Access Journals (Sweden)

    Jung-Gil Yun

    2017-11-01

    Full Text Available In order to reduce the intermetallic compounds formed during the application of an Al–7Ni wt % hot-dip multifunctional coating on boron steel, developed for Tailor Welded Blanks (TWB and hot stamping, 2–6 wt % Si was added to the coating to change the reaction layer. The coating was run at 690 °C for 120 s. Al9FeNi phases were formed on the steel interface, Fe2Al5 was formed on the steel, FeAl3 was generated between the existing layers, and flake-type Al2Fe3Si3 was formed in the Fe2Al5 phase, depending on the Si content. In addition, as Si was added to the coating, the thickness of the Fe2Al5 phase decreased and the thickness of the Al9FeNi phase and Al2Fe3Si3 increased. The decrease in the thickness of the Fe2Al5 phase was mainly due to the effect of the Si solid solution and the Al2Fe3Si3 formation in the Fe2Al5 phase. The reason for the growth of Al9FeNi is that the higher the Si content in the coating, the more the erosion of the interface of the steel material due to the coating solution. Therefore, the outflow of Fe into the coating liquid increased.

  8. Room temperature synthesis of Si-MCM-41 using polymeric version of ethyl silicate as a source of silica

    International Nuclear Information System (INIS)

    Gaydhankar, T.R.; Samuel, V.; Jha, R.K.; Kumar, R.; Joshi, P.N.

    2007-01-01

    Synthesis of mesoporous MCM-41 materials at room temperature using less expensive polymeric version of ethyl silicate (40 wt% SiO 2 ) as a source of silica was established. The influence of crucial synthesis parameters such as molar ratios of H 2 O/NH 4 OH, NH 4 OH/SiO 2 and CTMABr/SiO 2 in gel on the quality of the phase formed was investigated. Powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and low temperature N 2 adsorption-desorption isotherms have been employed to characterize the products. The magnitude of orderness, textural properties and thermal stability of the Si-MCM-41 samples prepared under identical judiciously pre-controlled synthesis conditions using ethyl silicate and conventional tetraethyl orthosilicate (TEOS) were assessed. Even though, ethyl silicate has proved to be suitable source for the preparation of MCM-41 at room temperature, there exists an optimum value of H 2 O/NH 4 OH for different NH 4 OH/SiO 2 molar ratios in the gel. Changes in the morphology were observed when NH 4 OH/SiO 2 , H 2 O/NH 4 OH molar ratios in the gels were changed

  9. Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

    Directory of Open Access Journals (Sweden)

    Siming Chen

    2015-06-01

    Full Text Available Direct integration of III–V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III–V materials and Si substrates have fundamentally limited monolithic epitaxy of III–V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs as dislocation filter layers (DFLs to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 µm InAs/GaAs quantum dot (QD laser that lases up to 111 °C, with a low threshold current density of 200 A/cm2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ~1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III–V light emitters on Si substrates.

  10. Stabilization effect of Zr and Ti additions on the ageing characteristics of Al-1 wt% Si alloy through a creep study

    Energy Technology Data Exchange (ETDEWEB)

    Deaf, G.H.; Beshai, M.H.N.; Abd El Khalek, A.M.; Graiss, G. [Ain Shams Univ., Cairo (Egypt). Dept. of Physics; Kenawy, M.A. [Ain Shams Univ., Cairo (Egypt). Womens Coll.

    1997-12-31

    Al-1 wt% Si and Al-1 wt% Si-0.1 wt% Zr-0.1 wt% Ti alloys were used to trace the effect of Zr and Ti additions on the behaviour of the steady state creep. After solid solution treatment specimens of both alloys were aged at 623, 673, 723 and 773 K and creep tests were performed at room temperature by applying stresses of 60.0, 62.4, 64.7 and 67.1 MPa. The results showed a sound stabilization effect of Zr and Ti on the ageing characteristics of binary Al-1 wt% Si alloy. Values of the applied stress sensitivity parameter, m, obtained were in the range of (20-34) for Al-Si alloy and (14-19) for Al-Si-Zr-Ti alloy. Time to rupture was found to be strongly increased by Zr and Ti additions. The activation energies of the precipitation process involved were found to be 81.9 kJ/mole and 33.7 kJ/mole of the Al-Si and Al-Si-Zr-Ti alloys respectively. (orig.) 17 refs.

  11. Effects of TiO2 addition on microwave dielectric properties of Li2MgSiO4 ceramics

    Science.gov (United States)

    Rose, Aleena; Masin, B.; Sreemoolanadhan, H.; Ashok, K.; Vijayakumar, T.

    2018-03-01

    Silicates have been widely studied for substrate applications in microwave integrated circuits owing to their low dielectric constant and low tangent loss values. Li2MgSiO4 (LMS) ceramics are synthesized through solid-state reaction route using TiO2 as an additive to the pure ceramics. Variations in dielectric properties of LMS upon TiO2 addition in different weight percentages (0.5, 1.5, 2) are studied by keeping the sintering parameters constant. Crystalline structure, phase composition, and microstructure of LMS and LMS-TiO2 ceramics were studied using x-ray diffraction spectrometer and High Resolution Scanning electron microscope. Density was measured through Archimedes method and the microwave dielectric properties were examined by Cavity perturbation technique. LMS achieved relative permittivity (ε r) of 5.73 and dielectric loss (tan δ) of 5.897 × 10‑4 at 8 GHz. In LMS-TiO2 ceramics, 0.5 wt% TiO2 added LMS showed comparatively better dielectric properties than other weight percentages where ε r = 5.67, tan δ = 7.737 × 10‑4 at 8 GHz.

  12. Evaluation of liquid-phase sintering SiC using as additive the system Al2O3/DyO3

    International Nuclear Information System (INIS)

    Oliveira, M.R.; Atilio, I.; Garcia, G.C.R.; Ribeiro, S.

    2012-01-01

    The objective of this work was to study the liquid-phase sintering SiC with additives that has not been studied yet, Al 2 O 3 /Dy 2 O 3 , with 10% in volume. The powders were mixed, dried, and pressed in uniaxial and isostatic pressing. It was studied the melting temperature of the additives and bars were sintered at temperatures of 1900, 1950 e 2000 deg C, with averaged linear shrinkage of 17%, phase transformations of β-SiC into α-SiC and formation of Dy 3 Al 5 O 12 at all temperatures. The results showed that for further densification, the temperature of 1950 deg C is enough for a higher densification, with a low wetting angle, transformations of SiC and formation of Dy 3 Al 5 O 12 . (author)

  13. Determination of Cr, Mn, Si, and Ni in carbon steels by optical emission spectrometry with spark source

    International Nuclear Information System (INIS)

    Garcia Gonzalez, M.A.; Pomares Alfonso, M.; Mora Lopez, L.

    1995-01-01

    Elemental composition of steels determines some important of his characteristic moreover it is necessary to obtain their quality certification. Analytical procedure has performed for determination of Cr, Mn, Si and Ni in carbon steels by optical emission spectrometry with spark source. reproducibility of results is 5-11 %. Exactitude has tested with results that have obtained by internationally recognised methods-

  14. Effect of Si addition on the structure and corrosion behavior of NbN thin films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Velasco, L. [Universidad Nacional de Colombia, Departamento de Ingenieria Mecanica y Mecatronica, Facultad de Ingenieria, Bogota (Colombia); University of Southern California, Department of Chemical Engineering and Materials Science, Los Angeles, CA (United States); Olaya, J.J. [Universidad Nacional de Colombia, Departamento de Ingenieria Mecanica y Mecatronica, Facultad de Ingenieria, Bogota (Colombia); Rodil, S.E. [Universidad Nacional Autonoma de Mexico, Instituto de Investigaciones en Materiales, Mexico, D. F. (Mexico)

    2016-02-15

    In this work, nanostructured Nb{sub x}Si{sub y}N{sub z} thin films were deposited onto stainless steel AISI 304 substrates by co-sputtering a Nb target with Si additions while using unbalanced magnetron sputtering. The microstructure was analyzed by X-ray diffraction, and the chemical composition was identified by X-ray photoelectron spectroscopy. The hardness was measured by nanoindentation, and the corrosion resistance was studied by potentiodynamic polarization curves and electrochemical impedance spectroscopy using a 3 wt% NaCl solution. The addition of Si in the NbN thin films changed the microstructure from a crystalline to an amorphous phase. The chemical analysis showed the presence of both Si{sub 3}N{sub 4} and NbN phases. The hardness decreased from 20 GPa (NbN) to 15 GPa for the film with the highest Si concentration (28.6 at.%). Nevertheless, the corrosion properties were significantly improved as the Si concentration increased; the polarization resistance after 168 h of immersion was two orders of magnitude larger in comparison with the substrate. (orig.)

  15. Influence of Si and N additions on structure and phase stability of Ge{sub 2}Sb{sub 2}Te{sub 5} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Koelpin, Helmut; Music, Denis; Mykhaylonka, Ruslan; Schneider, Jochen M [Materials Chemistry, RWTH Aachen University, D-52056 Aachen (Germany); Laptyeva, Galyna; Ghadimi, Reza; Richter, Silvia; Mayer, Joachim [Central Facility for Electron Microscopy, RWTH Aachen University, Ahornstrasse 55, D-52074 Aachen (Germany); Merget, Florian [Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstrasse 24, D-52074 Aachen (Germany)

    2009-10-28

    The influence of Si and N in Ge{sub 2}Sb{sub 2}Te{sub 5} (space group Fm3-barm) on structure and phase stability thereof was studied experimentally by thin film growth and characterization as well as theoretically by ab initio calculations. It was found that Si and N most probably accumulate in the amorphous matrix embedding Ge{sub 2}Sb{sub 2}Te{sub 5} grains. The incorporation of Si and N in these samples causes an increase of the crystallization temperature and the formation of finer grains. N is more efficient in increasing the crystallization temperature and in reducing the grain size than Si which can be understood based on the bonding analysis. The incorporation of both Si and N in Ge{sub 2}Sb{sub 2}Te{sub 5} is energetically unfavourable, leading to finer grains and larger crystallization temperatures. While in the case of Si additions no significant changes in bonding are observed, N additions appear to enable the formation of strong Te-N bonds in the amorphous matrix, which are shown to be almost twice as strong as the strongest bonds in unalloyed Ge{sub 2}Sb{sub 2}Te{sub 5}.

  16. Effect of Si addition on the structure and corrosion behavior of NbN thin films deposited by unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Velasco, L.; Olaya, J.J.; Rodil, S.E.

    2016-01-01

    In this work, nanostructured Nb x Si y N z thin films were deposited onto stainless steel AISI 304 substrates by co-sputtering a Nb target with Si additions while using unbalanced magnetron sputtering. The microstructure was analyzed by X-ray diffraction, and the chemical composition was identified by X-ray photoelectron spectroscopy. The hardness was measured by nanoindentation, and the corrosion resistance was studied by potentiodynamic polarization curves and electrochemical impedance spectroscopy using a 3 wt% NaCl solution. The addition of Si in the NbN thin films changed the microstructure from a crystalline to an amorphous phase. The chemical analysis showed the presence of both Si 3 N 4 and NbN phases. The hardness decreased from 20 GPa (NbN) to 15 GPa for the film with the highest Si concentration (28.6 at.%). Nevertheless, the corrosion properties were significantly improved as the Si concentration increased; the polarization resistance after 168 h of immersion was two orders of magnitude larger in comparison with the substrate. (orig.)

  17. Effects of B4C Addition on the Laser Beam Welding Characteristics of Al/SiC MMCs Produced By P/M

    Directory of Open Access Journals (Sweden)

    Serdar KARAOĞLU

    2011-01-01

    Full Text Available Fusion weldability characteristics of metal matrix composites (MMC produced by powder metallurgy (P/M are usually insufficient due to unwanted micro-structural changes that occur during welding. This study aims to investigate the effects of B4C addition as reinforcement on the weld quality of Al/SiC MMCs. After the production of Al/SiC MMCs by P/M with or without the addition of B4C, laser beam welding (LBW characteristics of the materials were investigated by focusing on the integrity of the welds. Optical microscopy (OM, scanning electron microscopy (SEM, and energy dispersive X-ray analysis (EDX were utilized for the characterization of the welds. Results show that Al/SiC MMCs produced by P/M can not be easily welded by LBW, but weldability characteristics of the material can be improved by the addition of B4C.

  18. Effect of additional carbon source on naphthalene biodegradation by Pseudomonas putida G7

    International Nuclear Information System (INIS)

    Lee, Kangtaek; Park, Jin-Won; Ahn, Ik-Sung

    2003-01-01

    Addition of a carbon source as a nutrient into soil is believed to enhance in situ bioremediation by stimulating the growth of microorganisms that are indigenous to the subsurface and are capable of degrading contaminants. However, it may inhibit the biodegradation of organic contaminants and result in diauxic growth. The objective of this work is to study the effect of pyruvate as another carbon source on the biodegradation of polynuclear aromatic hydrocarbons (PAHs). In this study, naphthalene was used as a model PAH, ammonium sulfate as a nitrogen source, and oxygen as an electron acceptor. Pseudomonas putida G7 was used as a model naphthalene-degrading microorganism. From a chemostat culture, the growth kinetics of P. putida G7 on pyruvate was determined. At concentrations of naphthalene and pyruvate giving similar growth rates of P. putida G7, diauxic growth of P. putida G7 was not observed. It is suggested that pyruvate does not inhibit naphthalene biodegradation and can be used as an additional carbon source to stimulate the growth of P. putida G7 that can degrade polynuclear aromatic hydrocarbons

  19. Simultaneous Purification and Perforation of Low-Grade Si Sources for Lithium-Ion Battery Anode.

    Science.gov (United States)

    Jin, Yan; Zhang, Su; Zhu, Bin; Tan, Yingling; Hu, Xiaozhen; Zong, Linqi; Zhu, Jia

    2015-11-11

    Silicon is regarded as one of the most promising candidates for lithium-ion battery anodes because of its abundance and high theoretical capacity. Various silicon nanostructures have been heavily investigated to improve electrochemical performance by addressing issues related to structure fracture and unstable solid-electrolyte interphase (SEI). However, to further enable widespread applications, scalable and cost-effective processes need to be developed to produce these nanostructures at large quantity with finely controlled structures and morphologies. In this study, we develop a scalable and low cost process to produce porous silicon directly from low grade silicon through ball-milling and modified metal-assisted chemical etching. The morphology of porous silicon can be drastically changed from porous-network to nanowire-array by adjusting the component in reaction solutions. Meanwhile, this perforation process can also effectively remove the impurities and, therefore, increase Si purity (up to 99.4%) significantly from low-grade and low-cost ferrosilicon (purity of 83.4%) sources. The electrochemical examinations indicate that these porous silicon structures with carbon treatment can deliver a stable capacity of 1287 mAh g(-1) over 100 cycles at a current density of 2 A g(-1). This type of purified porous silicon with finely controlled morphology, produced by a scalable and cost-effective fabrication process, can also serve as promising candidates for many other energy applications, such as thermoelectrics and solar energy conversion devices.

  20. Effect of Alloying Additions on the Phase Equilibria and Oxidation in the Mo-Si-B System

    National Research Council Canada - National Science Library

    Mendiratta, M

    2001-01-01

    .... For high-pressure turbine blade application, the ternary Mo-Si-B compositions exhibit adequate oxidation resistance in the temperature range of 1000 to 1300 deg C, but below 1000 deg C, the oxidation...

  1. The influence of additions of Al and Si on the lattice stability of fcc and hcp Fe-Mn random alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gebhardt, T; Music, D; Schneider, J M [Materials Chemistry, RWTH Aachen University, D-52056 Aachen (Germany); Ekholm, M; Abrikosov, I A [Department of Physics, Chemistry and Biology (IFM), Linkoeping University, SE-58183 Linkoeping (Sweden); Vitos, L [Department of Materials and Engineering, Applied Materials Physics, Royal Institute of Technology (KTH), SE-10044 Stockholm (Sweden); Dick, A; Hickel, T; Neugebauer, J, E-mail: gebhardt@mch.rwth-aachen.de [Department of Computational Materials Design, Max-Planck-Institut fuer Eisenforschung GmbH, D-40237 Duesseldorf (Germany)

    2011-06-22

    We have studied the influence of additions of Al and Si on the lattice stability of face-centred-cubic (fcc) versus hexagonal-closed-packed (hcp) Fe-Mn random alloys, considering the influence of magnetism below and above the fcc Neel temperature. Employing two different ab initio approaches with respect to basis sets and treatment of magnetic and chemical disorder, we are able to quantify the predictive power of the ab initio methods. We find that the addition of Al strongly stabilizes the fcc lattice independent of the regarded magnetic states. For Si a much stronger dependence on magnetism is observed. Compared to Al, almost no volume change is observed as Si is added to Fe-Mn, indicating that the electronic contributions are responsible for stabilization/destabilization of the fcc phase.

  2. The influence of additions of Al and Si on the lattice stability of fcc and hcp Fe-Mn random alloys

    International Nuclear Information System (INIS)

    Gebhardt, T; Music, D; Schneider, J M; Ekholm, M; Abrikosov, I A; Vitos, L; Dick, A; Hickel, T; Neugebauer, J

    2011-01-01

    We have studied the influence of additions of Al and Si on the lattice stability of face-centred-cubic (fcc) versus hexagonal-closed-packed (hcp) Fe-Mn random alloys, considering the influence of magnetism below and above the fcc Neel temperature. Employing two different ab initio approaches with respect to basis sets and treatment of magnetic and chemical disorder, we are able to quantify the predictive power of the ab initio methods. We find that the addition of Al strongly stabilizes the fcc lattice independent of the regarded magnetic states. For Si a much stronger dependence on magnetism is observed. Compared to Al, almost no volume change is observed as Si is added to Fe-Mn, indicating that the electronic contributions are responsible for stabilization/destabilization of the fcc phase.

  3. Tribological properties of SiC-based MCD films synthesized using different carbon sources when sliding against Si3N4

    Science.gov (United States)

    Wang, Xinchang; Shen, Xiaotian; Zhao, Tianqi; Sun, Fanghong; Shen, Bin

    2016-04-01

    Micro-crystalline diamond (MCD) films are deposited on reactive sintering SiC substrates by the bias enhanced hot filament chemical vapor deposition (BE-HFCVD) method, respectively using the methane, acetone, methanol and ethanol as the carbon source. Two sets of standard tribotests are conducted, adopting Si3N4 balls as the counterpart balls, respectively with the purpose of clarifying differences among tribological properties of different MCD films, and studying detailed effects of the carbon source C, normal load Fn and sliding velocity v based on orthogonal analyses. It is clarified that the methane-MCD film presents the lowest growth rate, the highest film quality, the highest hardness and the best adhesion, in consequence, it also performs the best tribological properties, including the lowest coefficient of friction (COF) and wear rate Id, while the opposite is the methanol-MCD film. Under a normal load Fn of 7 N and at a sliding velocity v of 0.4183 m/s, for the methane-MCD film, the maximum COF (MCOF) is 0.524, the average COF during the relatively steady-state regime (ACOF) is 0.144, and the Id is about 1.016 × 10-7 mm3/N m; and for the methanol-MCD film, the MCOF is 0.667, the ACOF is 0.151, and the Id is 1.448 × 10-7 mm3/N m. Moreover, the MCOF, ACOF, Id and the wear rate of the Si3N4 ball Ib will all increase with the Fn, while the v only has significant effect on the ACOF, which shows a monotone increasing trend with the v.

  4. Effect of Si and Mn additions on ferrite and austenite phase fractions in 25Cr-7Ni-1.5Mo-3W base super duplex stainless steels

    International Nuclear Information System (INIS)

    Jeong, S.W.; Lee, Z.-H.; Lee, H.M.

    2000-01-01

    The effect of heat treatment and Si and Mn additions on the ferrite and austenite phase fractions of the super duplex stainless steel (SDSS), Fe-25Cr-7Ni-1.5Mo-3W-Si-Mn-0.25N (numbers are all in wt.% unless specified otherwise), was investigated. The thermodynamic calculations of phase equilibria and phase fractions were performed using the Thermo-Calc program. Based on the calculated results, specific compositions of Si and Mn were selected and alloys with these compositions were analysed by Feritscope, X-ray diffractometry and scanning electron microscopy. The calculated phase fractions and experimentally analysed ones were compared and there was a good agreement between calculations and measurements. The optimum heat treatment condition for Fe-25Cr-7Ni-1.5Mo-3W-0.5Si-0.5Mn-0.25N is to hold at 1050 to 1100 C for 2 h in considering the ferrite to austenite ratio of 50:50 and to avoid second phase precipitation such as the σ phase. It was suggested that an excessive addition of more than 0.8Si and 1.0Mn may induce the σ phase precipitation. (orig.)

  5. Improving High-Temperature Tensile and Low-Cycle Fatigue Behavior of Al-Si-Cu-Mg Alloys Through Micro-additions of Ti, V, and Zr

    Science.gov (United States)

    Shaha, S. K.; Czerwinski, F.; Kasprzak, W.; Friedman, J.; Chen, D. L.

    2015-07-01

    High-temperature tensile and low-cycle fatigue tests were performed to assess the influence of micro-additions of Ti, V, and Zr on the improvement of the Al-7Si-1Cu-0.5Mg (wt pct) alloy in the as-cast condition. Addition of transition metals led to modification of microstructure where in addition to conventional phases present in the Al-7Si-1Cu-0.5Mg base, new thermally stable micro-sized Zr-Ti-V-rich phases Al21.4Si4.1Ti3.5VZr3.9, Al6.7Si1.2TiZr1.8, Al2.8Si3.8V1.6Zr, and Al5.1Si35.4Ti1.6Zr5.7Fe were formed. The tensile tests showed that with increasing test temperature from 298 K to 673 K (25 °C to 400 °C), the yield stress and tensile strength of the present studied alloy decreased from 161 to 84 MPa and from 261 to 102 MPa, respectively. Also, the studied alloy exhibited 18, 12, and 5 pct higher tensile strength than the alloy A356, 354 and existing Al-Si-Cu-Mg alloy modified with additions of Zr, Ti, and Ni, respectively. The fatigue life of the studied alloy was substantially longer than those of the reference alloys A356 and the same Al-7Si-1Cu-0.5Mg base with minor additions of V, Zr, and Ti in the T6 condition. Fractographic analysis after tensile tests revealed that at the lower temperature up to 473 K (200 °C), the cleavage-type brittle fracture for the precipitates and ductile fracture for the matrix were dominant while at higher temperature fully ductile-type fracture with debonding and pull-out of cracked particles was identified. It is believed that the intermetallic precipitates containing Zr, Ti, and V improve the alloy performance at increased temperatures.

  6. Influence of the Sr and Mg Alloying Additions on the Bonding Between Matrix and Reinforcing Particles in the AlSi7Mg/SiC-Cg Hybrid Composite

    Directory of Open Access Journals (Sweden)

    Dolata A. J.

    2016-06-01

    Full Text Available The aim of the work was to perform adequate selection of the phase composition of the composite designated for permanent - mould casting air compressor pistons. The hybrid composites based on AlSi7Mg matrix alloy reinforced with mixture of silicon carbide (SiC and glassy carbon (Cg particles were fabricated by the stir casting method. It has been shown that the proper selection of chemical composition of matrix alloy and its modification by used magnesium and strontium additions gives possibility to obtain both the advantageous casting properties of composite suspensions as well as good bonding between particles reinforcements and matrix.

  7. The enhancement of the interdiffusion in Si/Ge amorphous artificial multilayers by additions of B and Au

    International Nuclear Information System (INIS)

    Park, B.; Spaepen, F.; Poate, J.M.; Jacobson, D.C.

    1990-01-01

    Amorphous Si/amorphous Ge artificial multilayers were prepared by ion beam sputtering. Boron or gold impurities were introduced into the Si/Ge multilayers by ion implantation or during the sputtering deposition. Diffusion coefficients were determined by measuring the decrease in the intensity of the first order X-ray diffraction peak resulting from the composition modulation. It was found that the interdiffusion of Si and Ge in their amorphous phase can be enhanced by doping. The enhancement factor is independent of the degree of structural relaxation, as observed by the decrease of diffusivity with annealing time, of the amorphous phase. A model is proposed that describes this behavior in terms of electronic effects, introduced by the dopants, on the pre-existing structural defects governing diffusion

  8. Depth distribution of Frank loop defects formed in ion-irradiated stainless steel and its dependence on Si addition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Dongyue, E-mail: dychen@safety.n.t.u-tokyo.ac.jp [The University of Tokyo, Department of Nuclear Engineering and Management, School of Engineering, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656 (Japan); Murakami, Kenta [The University of Tokyo, Nuclear Professional School, School of Engineering, 2-22 Shirakata-Shirane, Tokai-mura, Ibaraki 319-1188 (Japan); Dohi, Kenji; Nishida, Kenji; Soneda, Naoki [Central Research Institute of Electric Power Industry, 2-11-1 Iwado-kita, Komae, Tokyo 201-8511 (Japan); Li, Zhengcao, E-mail: zcli@tsinghua.edu.cn [Tsinghua University, School of Materials Science and Engineering, Beijing 100084 (China); Liu, Li; Sekimura, Naoto [The University of Tokyo, Department of Nuclear Engineering and Management, School of Engineering, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-12-15

    Although heavy ion irradiation is a good tool to simulate neutron irradiation-induced damages in light water reactor, it produces inhomogeneous defect distribution. Such difference in defect distribution brings difficulty in comparing the microstructure evolution and mechanical degradation between neutron and heavy ion irradiation, and thus needs to be understood. Stainless steel is the typical structural material used in reactor core, and could be taken as an example to study the inhomogeneous defect depth distribution in heavy ion irradiation and its influence on the tested irradiation hardening by nano-indentation. In this work, solution annealed stainless steel model alloys are irradiated by 3 MeV Fe{sup 2+} ions at 400 °C to 3 dpa to produce Frank loops that are mainly interstitial in nature. The silicon content of the model alloys is also tuned to change point defect diffusion, so that the loop depth distribution influenced by diffusion along the irradiation beam direction could be discussed. Results show that in low Si (0% Si) and base Si (0.42% Si) samples the depth distribution of Frank loop density quite well matches the dpa profile calculated by the SRIM code, but in high Si sample (0.95% Si), the loop number density in the near-surface region is very low. One possible explanation could be Si’s role in enhancing the effective vacancy diffusivity, promoting recombination and thus suppressing interstitial Frank loops, especially in the near-surface region, where vacancies concentrate. By considering the loop depth distribution, the tested irradiation hardening is successfully explained by the Orowan model. A hardening coefficient of around 0.30 is obtained for all the three samples. This attempt in interpreting hardening results may make it easier to compare the mechanical degradation between different irradiation experiments.

  9. Strained Si channel NMOSFETs using a stress field with Si1-yC y source and drain stressors

    International Nuclear Information System (INIS)

    Chang, S.T.; Tasi, H.-S.; Kung, C.Y.

    2006-01-01

    The strain field in the silicon channel of a metal-oxide-semiconductor transistor with silicon-carbon alloy source and drain stressors was evaluated using the commercial process simulator FLOOPS-ISE TM . The physical origin of the strain components in the transistor channel region was explained. The magnitude and distribution of the strain components, and their dependence on device design parameters such as the spacing L G between the silicon-carbon alloy stressors, the carbon mole fraction in the stressors and stressor depth were investigated. Reducing the stressor spacing L G or increasing the carbon mole fraction in the stressors and stressor depth increases the magnitude of the vertical compressive stress and the lateral tensile stress in the portion of the N channel region where the inversion charge resides. This is beneficial for improving the electron mobility in n-channel metal-oxide-semiconductor transistors. A simple guiding principle for an optimum combination of the above-mentioned device design parameters in terms of mobility enhancement, drain current enhancement and the tradeoff consideration for junction leakage current degradation

  10. Effect of CuO addition on the sintering temperature and microwave dielectric properties of CaSiO3–Al2O3 ceramics

    Directory of Open Access Journals (Sweden)

    Denghao Li

    2014-06-01

    Full Text Available CuO-doped CaSiO3–1 wt% Al2O3 ceramics were synthesized via a traditional solid-state reaction method, and their sintering behavior, microstructure and microwave dielectric properties were investigated. The results showed that appropriate CuO addition could accelerate the sintering process and assist the densification of CaSiO3–1 wt% Al2O3 ceramics, which could effectively lower the densification temperature from 1250 °C to 1050 °C. However, the addition of CuO undermined the microwave dielectric properties. The optimal amount of CuO addition was found to be 0.8 wt%, and the derived CaSiO3–Al2O3 ceramic sintered at 1100 °C presented good microwave dielectric properties of εr=7.27, Q×f=16,850 GHz and τf=−39.53 ppm/°C, which is much better than those of pure CaSiO3 ceramic sintered at 1340 oC (Q×f=13,109 GHz. The chemical compatibility of the above ceramic with 30 Pd/70 Ag during the cofiring process has also been investigated, and the result showed that there was no chemical reaction between palladium–silver alloys and ceramics.

  11. Thermal stability of (AlSi)x(ZrVTi) intermetallic phases in the Al–Si–Cu–Mg cast alloy with additions of Ti, V, and Zr

    International Nuclear Information System (INIS)

    Shaha, S.K.; Czerwinski, F.; Kasprzak, W.; Friedman, J.; Chen, D.L.

    2014-01-01

    Highlights: • Al–Si–Cu–Mg alloy was modified by introducing Zr, V, and Ti. • The chemistry of the phases was identified using SEM/EDX. • The crystal lattice parameters of the phases were characterized using EBSD. • To investigate the phase stability, XRD was performed up to 600 °C. • Thermal analysis was done to find out the possible phase transformation reactions. - Abstract: The Al–Si–Cu–Mg cast alloy was modified with additions of Ti–V–Zr to improve the thermal stability of intermetallics at increased temperatures. A combination of electron microscopy, electron backscatter diffraction, and high temperature X-ray diffraction was explored to identify phases and temperatures of their thermal stability. The micro-additions of transition metals led to formation of several (AlSi) x (TiVZr) phases with D0 22 /D0 23 tetragonal crystal structure and different lattice parameters. While Cu and Mg rich phases along with the eutectic Si dissolved at temperatures from 300 to 500 °C, the (AlSi) x (TiVZr) phases were stable up to 696–705 °C which is the beneficial to enhance the high temperature properties. Findings of this study are useful for selecting temperatures during melting and heat treatment of Al–Si alloys with additions of transition metals

  12. TANAMI: Tracking Active Galactic Nuclei with Austral Milliarcsecond Interferometry. II. Additional sources

    Science.gov (United States)

    Müller, C.; Kadler, M.; Ojha, R.; Schulz, R.; Trüstedt, J.; Edwards, P. G.; Ros, E.; Carpenter, B.; Angioni, R.; Blanchard, J.; Böck, M.; Burd, P. R.; Dörr, M.; Dutka, M. S.; Eberl, T.; Gulyaev, S.; Hase, H.; Horiuchi, S.; Katz, U.; Krauß, F.; Lovell, J. E. J.; Natusch, T.; Nesci, R.; Phillips, C.; Plötz, C.; Pursimo, T.; Quick, J. F. H.; Stevens, J.; Thompson, D. J.; Tingay, S. J.; Tzioumis, A. K.; Weston, S.; Wilms, J.; Zensus, J. A.

    2018-02-01

    Context. TANAMI is a multiwavelength program monitoring active galactic nuclei (AGN) south of - 30° declination including high-resolution very long baseline interferometry (VLBI) imaging, radio, optical/UV, X-ray, and γ-ray studies. We have previously published first-epoch8.4 GHz VLBI images of the parsec-scale structure of the initial sample. In this paper, we present images of 39 additional sources. The full sample comprises most of the radio- and γ-ray brightest AGN in the southern quarter of the sky, overlapping with the region from which high-energy (> 100 TeV) neutrino events have been found. Aims: We characterize the parsec-scale radio properties of the jets and compare them with the quasi-simultaneous Fermi/LAT γ-ray data. Furthermore, we study the jet properties of sources which are in positional coincidence with high-energy neutrino events compared to the full sample. We test the positional agreement of high-energy neutrino events with various AGN samples. Methods: TANAMI VLBI observations at 8.4 GHz are made with southern hemisphere radio telescopes located in Australia, Antarctica, Chile, New Zealand, and South Africa. Results: Our observations yield the first images of many jets below - 30° declination at milliarcsecond resolution. We find that γ-ray loud TANAMI sources tend to be more compact on parsec-scales and have higher core brightness temperatures than γ-ray faint jets, indicating higher Doppler factors. No significant structural difference is found between sources in positional coincidence with high-energy neutrino events and other TANAMI jets. The 22 γ-ray brightest AGN in the TANAMI sky show only a weak positional agreement with high-energy neutrinos demonstrating that the > 100 TeV IceCube signal is not simply dominated by a small number of the γ-ray brightest blazars. Instead, a larger number of sources have to contribute to the signal with each individual source having only a small Poisson probability for producing an event in

  13. Glass forming ability and mechanical properties of the NiZrTiSi amorphous alloys modified with Al, Cu and Nb additions

    International Nuclear Information System (INIS)

    Czeppe, Tomasz; Ochin, Patrick; Sypien, Anna

    2007-01-01

    The composition of the amorphous alloy Ni 59 Zr 20 Ti 16 Si 5 was modified with 2-9 at.% additions of Cu, Al and Nb. The ribbons and the bars 2.7 mm in diameter were prepared by melt spinning and injection casting from the alloys of the compositions: Ni 56 Zr 18 Ti 16 Si 5 Al 3 Cu 2 , Ni 56 Zr 18 Ti 13 Al 6 Si 5 Cu 2 , Ni 56 Zr 16 Ti 12 Nb 9 Al 3 Cu 2 Si 2 and Ni 56 Zr 16 Ti 12 Nb 6 Al 6 Cu 2 Si 2 . All ribbons were amorphous up to the resolution of the X-ray diffraction and conventional transmission electron microscopy, however rods were partially crystalline. Increase of Al content lowered and Nb content slightly increased crystallization start temperature T x and glass transition temperature T g . The influence of composition changes on the overcooled liquid range ΔT was more complicated. The increase of Nb and decrease of Ti and Zr content led to the remarkable increase of the liquidus temperature T l . As a result GFA calculated as T g /T l was lowered to the values about 0.63 for 6 and 9 at.% Nb addition. The activation energies for primary crystallization in alloy with 6 at.% Al and 6 at.% of Nb, were determined. The changes of tensile test strength and microhardness with Al and Nb additions showed hardening effect caused by Nb additions and increase in fracture strength with increasing Al content

  14. Effect of Ce and Zr Addition to Ni/SiO2 Catalysts for Hydrogen Production through Ethanol Steam Reforming

    Directory of Open Access Journals (Sweden)

    Jose Antonio Calles

    2015-01-01

    Full Text Available A series of Ni/Ce\\(_{x}\\Zr\\(_{1-x}\\O\\(_{2}\\/SiO\\(_{2}\\ catalysts with different Zr/Ce mass ratios were prepared by incipient wetness impregnation. Ni/SiO\\(_{2}\\, Ni/CeO\\(_{2}\\ and Ni/ZrO\\(_{2}\\ were also prepared as reference materials to compare. Catalysts' performances were tested in ethanol steam reforming for hydrogen production and characterized by XRD, H\\(_{2}\\-temperature programmed reduction (TPR, NH\\(_{3}\\-temperature programmed desorption (TPD, TEM, ICP-AES and N\\(_{2}\\-sorption measurements. The Ni/SiO\\(_{2}\\ catalyst led to a higher hydrogen selectivity than Ni/CeO\\(_{2}\\ and Ni/ZrO\\(_{2}\\, but it could not maintain complete ethanol conversion due to deactivation. The incorporation of Ce or Zr prior to Ni on the silica support resulted in catalysts with better performance for steam reforming, keeping complete ethanol conversion over time. When both Zr and Ce were incorporated into the catalyst, Ce\\(_{x}\\Zr\\(_{1-x}\\O\\(_{2}\\ solid solution was formed, as confirmed by XRD analyses. TPR results revealed stronger Ni-support interaction in the Ce\\(_{x}\\Zr\\(_{1-x}\\O\\(_{2}\\-modified catalysts than in Ni/SiO\\(_{2}\\ one, which can be attributed to an increase of the dispersion of Ni species. All of the Ni/Ce\\(_{x}\\Zr\\(_{1-x}\\O\\(_{2}\\/SiO\\(_{2}\\ catalysts exhibited good catalytic activity and stability after 8 h of time on stream at 600°. The best catalytic performance in terms of hydrogen selectivity was achieved when the Zr/Ce mass ratio was three.

  15. LOW-TEMPERATURE SINTERED (ZnMg2SiO4 MICROWAVE CERAMICS WITH TiO2 ADDITION AND CALCIUM BOROSILICATE GLASS

    Directory of Open Access Journals (Sweden)

    BO LI

    2011-03-01

    Full Text Available The low-temperature sintered (ZnMg2SiO–TiO2 microwave ceramic using CaO–B2O3–SiO2 (CBS as a sintering aid has been developed. Microwave properties of (Zn1-xMgx2SiO4 base materials via sol-gel method were highly dependent on the Mg-substituted content. Further, effects of CBS and TiO2 additives on the crystal phases, microstructures and microwave characteristics of (ZnMg2SiO4 (ZMS ceramics were investigated. The results indicated that CBS glass could lower the firing temperature of ZMS dielectrics effectively from 1170 to 950°C due to the liquid-phase effect, and significantly improve the sintering behavior and microwave properties of ZMS ceramics. Moreover, ZMS–TiO2 ceramics showed the biphasic structure and the abnormal grain growth was suppressed by the pinning effect of second phase TiO2. Proper amount of TiO2 could tune the large negative temperature coefficient of resonant frequency (tf of ZMS system to a near zero value. (Zn0.8Mg0.22SiO4 codoped with 10 wt.% TiO2 and 3 wt.% CBS sintered at 950°C exhibits the dense microstructure and excellent microwave properties: εr = 9.5, Q·f = 16 600 GHz and tf = −9.6 ppm/°C.

  16. Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study

    Directory of Open Access Journals (Sweden)

    Sangmo Koo

    2016-09-01

    Full Text Available The selective epitaxial growth of Si1-xGex and the related strain properties were studied. Epitaxial Si1-xGex films were deposited on (100 and (110 orientation wafers and on patterned Si wafers with recessed source and drain structures via ultrahigh vacuum chemical vapor deposition using different growing steps and Ge concentrations. The stepwise process was split into more than 6 growing steps that ranged in thicknesses from a few to 120 nm in order to cover the wide stages of epitaxial growth. The growth rates of SiGe on the plane and patterned wafers were examined and a dependence on the surface orientation was identified. As the germanium concentration increased, defects were generated with thinner Si1-xGex growth. The defect generation was the result of the strain evolution which was examined for channel regions with a Si1-xGex source/drain (S/D structure.

  17. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    Energy Technology Data Exchange (ETDEWEB)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  18. Microstructure and hydrothermal corrosion behavior of NITE-SiC with various sintering additives in LWR coolant environments

    Energy Technology Data Exchange (ETDEWEB)

    Parish, Chad M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Terrani, Kurt A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Kim, Young -Jin [GE Global Research Center, Schenectady, NY (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-11-28

    Nano-infiltration and transient eutectic phase (NITE) sintering was developed for fabrication of nuclear grade SiC composites. We produced monolithic SiC ceramics using NITE sintering, as candidates for accident-tolerant fuels in light-water reactors (LWRs). In this work, we exposed three different NITE chemistries (yttria-alumina [YA], ceria-zirconia-alumina [CZA], and yttria-zirconia-alumina [YZA]) to autoclave conditions simulating LWR coolant loops. The YZA was most corrosion resistant, followed by CZA, with YA being worst. High-resolution elemental analysis using scanning transmission electron microscopy (STEM) X-ray mapping combined with multivariate statistical analysis (MVSA) datamining helped explain the differences in corrosion. YA-NITE lost all Al from the corroded region and the ytttria reformed into blocky precipitates. The CZA material lost all Al from the corroded area, and the YZA – which suffered the least corrosion –retained some Al in the corroded region. Lastly, the results indicate that the YZA-NITE SiC is most resistant to hydrothermal corrosion in the LWR environment.

  19. Influence of grain size and additions of Al and Mn on the magnetic properties of non-oriented electrical steels with 3 wt. (% Si

    Directory of Open Access Journals (Sweden)

    Rodrigo Felix de Araujo Cardoso

    2008-03-01

    Full Text Available The influence of hot-band grain size and additions of aluminum and manganese on the magnetic properties of non-oriented grain (NOG low-carbon electrical steel with about 3 wt. (% Si were investigated using optical microscopy and X ray diffraction. The addition of manganese resulted in larger grains after final annealing. Coarse grains in the hot-band and addition of Mn led to a Goss orientation component after final annealing, which resulted in an increase in the magnetic permeability.

  20. Influence of additives on the microstructure and tensile properties of near-eutectic Al-10.8%Si cast alloy

    International Nuclear Information System (INIS)

    Mohamed, A.M.A.; Samuel, A.M.; Samuel, F.H.; Doty, H.W.

    2009-01-01

    The continuing quest for aluminum castings with enhanced mechanical properties for applications in the automotive industries has intensified the interest in aluminum-silicon alloys. In Al-Si alloys, the properties are influenced by the shape and distribution of the eutectic silicon particles in the matrix, as also by the iron intermetallics and copper phases that occur upon solidification. The detailed microstructure and tensile properties of as-cast and heat-treated new experimental alloy belonging to cast Al-Si near-eutectic alloys have been investigated as a function of Fe, Mn, Cu, and Mg content. Microstructural examination was carried out using optical microscopy, image analysis, and electron probe microanalysis (EPMA), wavelength dispersive spectroscopic (WDS) analysis facilities. Tensile properties upon artificial aging in the temperature range of 155-240 o C for 5 h were also investigated. The results show that the volume fraction of Fe-intermetallics increases as the iron or manganese contents increase. Compact polygonal or star-like particles form when the sludge factor is greater than 2.1. The Al 2 Cu phase was observed to dissolve almost completely during solution heat treatment of all the alloys studied, especially those containing high levels of Mg and Fe, while Al 5 Cu 2 Mg 8 Si 6 , sludge, and α-Fe phases were found to persist after solution heat treatment. The β-Al 5 (Fe,Mn)Si phase dissolved partially in Sr-modified alloys, and its dissolution became more pronounced after solution heat treatment. At 0.5% Mn, the β-Fe phase forms when the Fe content is above 0.75%, causing the tensile properties to decrease drastically. The same results are obtained when the levels of both Fe and Mn are increased beyond 0.75%, because of sludge formation. On the other hand, the tensile properties of the Cu-containing alloys are affected slightly at high levels of Mg as a result of the formation of Al 5 Cu 2 Mg 8 Si 6 which decreases the amount of free Mg

  1. Effect of P addition on glass forming ability and soft magnetic properties of melt-spun FeSiBCuC alloy ribbons

    International Nuclear Information System (INIS)

    Xu, J.; Yang, Y.Z.; Li, W.; Chen, X.C.; Xie, Z.W.

    2016-01-01

    The dependency of phosphorous content on the glass forming ability, thermal stability and soft magnetic properties of Fe 83.4 Si 2 B 14−x P x Cu 0.5 C 0.1 (x=0,1,2,3,4) alloys was investigated. The experimental results showed that the substitution of B by P increased the glass forming ability in this alloy system. The Fe 83.4 Si 2 B 10 P 4 Cu 0.5 C 0.1 alloy shows a fully amorphous character. Thermal stability of melt-spun ribbons increases and temperature interval between the first and second crystallization peaks enlarges with the increase of P content. And the saturation magnetic flux density (Bs) shows a slight increase with the increase of P content. The Fe 83.4 Si 2 B 11 P 3 Cu 0.5 C 0.1 nanocrystalline alloy exhibits a high Bs about 200.6 emu/g. The Bs of fully amorphous alloy Fe 83.4 Si 2 B 10 P 4 Cu 0.5 C 0.1 drops dramatically to 172.1 emu/g, which is lower than that of other nanocrystallines. Low material cost and excellent soft magnetic properties make the FeSiBPCuC alloys promise soft magnetic materials for industrial applications. - Highlights: • Partial substituting B by P helps to improve the glass forming ability of the alloy. • The addition of P content reduces the thermal stability and improves heat treatment temperature region for these alloys. • The Fe 83.4 Si 2 B 11 P 3 Cu 0.5 C 0.1 nanocrystalline alloy exhibits a high saturation magnetic density of 200.6 emu/g.

  2. Extracellular matrix in tumours as a source of additional neoplastic lesions - a review

    Directory of Open Access Journals (Sweden)

    Madej Janusz A.

    2014-03-01

    Full Text Available The review describes the role of cells of extracellular matrix (ECM as a source of neoplastic outgrowths additional to the original tumour. The cells undergo a spontaneous transformation or stimulation by the original tumour through intercellular signals, e.g. through Shh protein (sonic hedgehog. Additionally, cells of an inflammatory infiltrate, which frequently accompany malignant tumours and particularly carcinomas, may regulate tumour cell behaviour. This is either by restricting tumour proliferation or, inversely, by induction and stimulation of the proliferation of another tumour cell type, e.g. mesenchymal cells. The latter type of tumour may involve formation of histologically differentiated stromal tumours (GIST, which probably originate from interstitial cells of Cajal in the alimentary tract. Occasionally, e.g. in gastric carcinoma, proliferation involves lymphoid follicles and lymphocytes of GALT (gut-associated lymphoid tissue, which gives rise to lymphoma. The process is preceded by the earlier stage of intestinal metaplasia, or is induced by gastritis alone. This is an example of primary involvement of inflammatory infiltrate cells in neoplastic progression. Despite the numerous histogenetic classifications of tumours (zygotoma benignum et zygotoma malignum, or mesenchymomata maligna et mesenchymomata benigna, currently in oncological diagnosis the view prevails that the direction of tumour differentiation and its degree of histologic malignancy (grading are more important factors than the histogenesis of the tumour.

  3. High growth rate of a-SiC:H films using ethane carbon source by HW

    Indian Academy of Sciences (India)

    Hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared ... Total hydrogen content drops from 22.6 to 14.4 at.% when deposition pressure is increased. Raman spectra show increase in structural disorder with increase in ...

  4. Effect of Mn and AlTiB Addition and Heattreatment on the Microstructures and Mechanical Properties of Al-Si-Fe-Cu-Zr Alloy.

    Science.gov (United States)

    Yoo, Hyo-Sang; Kim, Yong-Ho; Lee, Seong-Hee; Son, Hyeon-Taek

    2018-09-01

    The microstructure and mechanical properties of as-extruded Al-0.1 wt%Si-0.2 wt%Fe- 0.4 wt%Cu-0.04 wt%Zr-xMn-xAlTiB (x = 1.0 wt%) alloys under various annealing processes were investigated and compared. After the as-cast billets were kept at 400 °C for 1 hr, hot extrusion was carried out with a reduction ratio of 38:1. In the case of the as-extruded Al-Si-Fe-Cu-Zr alloy at annealed at 620 °C, large equiaxed grain was observed. When the Mn content is 1.0 wt%, the phase exhibits a skeleton morphology, the phase formation in which Mn participated. Also, the volume fraction of the intermetallic compounds increased with Mn and AlTiB addition. For the Al-0.1Si-0.2Fe-0.4Cu-0.04Zr alloy with Mn and AlTiB addition from 1.0 wt%, the ultimate tensile strength increased from 100.47 to 119.41 to 110.49 MPa. The tensile strength of the as-extruded alloys improved with the addition of Mn and AlTiB due to the formation of Mn and AlTiB-containing intermetallic compounds.

  5. ADDITIONS TO THE RETROSPECTIVE BIBLIOGRAPHY OF LITHUANIAN BOOKS AND THEIR SOURCES

    Directory of Open Access Journals (Sweden)

    Kaunas, Domas

    2006-12-01

    Full Text Available The bibliographers of the Lithuanian National Martynas Maþvydas Library have written an open letter to the public asking to provide data about additions to the retrospective bibliography of oldLithuanian publications published in Vilnius in 1969. This act was inspired by the Consorcium of European Research Libraries that started a project of database of the Hand Press Books publishedin 1455–1830. Lithuanian National Library is conducting retroconversion of the retrospective bibliography and provide data to the international database. This task will also lead to the creationof an original database of books and an electronic publication of it on CD-ROM. The specialists expect that bibliophiles and collectors will help to identify the additional publications. The requestto investigate personal libraries looking for the books published before 1864 was made. The data on them should be sent to the creators of the bibliography. This article is a response to the call of bibliographers. It provides information about rare books collected in the personal library of the author. They allow to make changes of the scope of the bibliography and correct some bibliographic records. The data is organised according to the importance and subject: a additions to the retrospective bibliography of books, b copies of the books registered and described in the bibliography using sources, c additional data to some bibliographic descriptions, d unknown copies of rare books, e valuable copies of books. This article also pursues a methodological purpose. It presents the personally acquired experience of data retrieval, acquisition and classification forsuppllementing of the retrospective bibliography as well as the methods of making and arguing the assumptions inevitable in the history of a book. The author believes that the registration of oldbooks from personal libraries in bibliographies is an important task of accounting of the cultural heritage. It is very important

  6. Spark plasma sintering of α-Si3N4 ceramics with Al2O3 and Y2O3 as additives and its morphology transformation

    International Nuclear Information System (INIS)

    Ceja-Cardenas, L.; Lemus-Ruiz, J.; Jaramillo-Vigueras, D.; Torre, S.D. de la

    2010-01-01

    The spark plasma sintering SPS technique has been used to densify pure α-Si 3 N 4 commercial powder, having Y 2 O 3 and Al 2 O 3 additions; from 0, 2.5 and 5.0 wt% to 0, 1.5 and 3 wt%, respectively. Such powder admixtures were previously spray-dried at 160 o C in such a way that powder was thoroughly homogenized. Set sintering treatment included: 0-20 min holding time and 38 MPa axial load, sintering temperature of 1500 o C and heating rate of 300 o C/min. The maximum relative density developed on studied specimens ranged from 99.4 to 99.8% and could only be attained once the β-phase nucleated from the α-silicon nitride matrix. Obtained Si 3 N 4 composites combine both α- and β-phases. The later phase becomes evident trough the rod-like geometry, which forms throughout the presence of a liquid face. The largest hardness value developed (1588 Hv (20kgf) ) on studied ceramics (3M-series - 3 min) matched close to the corresponding counterpart found in literature (1600 Hv), the former developed in much shorter sintering times. Using X-ray diffraction XRD and scanning electron microscope SEM analyses, the two major phases of Si 3 N 4 were identified in the resultant microstructures. The morphology evolution of Si 3 N 4 particles as occurred upon SPS-sintering is analyzed.

  7. Epitaxial growth of 3C-SiC by using C{sub 60} as a carbon source; Untersuchungen zum epitaktischen Wachstum von 3C-SiC bei Verwendung einer C{sub 60}-Kohlenstoffquelle

    Energy Technology Data Exchange (ETDEWEB)

    Schreiber, Sascha

    2006-01-15

    Within this work epitaxial 3C-SiC-films were grown on Si(001) substrates and on ion beam synthesized 3C-SiC(001) pseudo substrates. A rather new process was used which is based on the simultaneous deposition of C60 and Si. In order to set up the necessary experimental conditions an ultra-high vacuum chamber has been designed and built. A RHEED system was used to examine SiC film growth in-situ. Using the described technique 3C-SiC films were grown void-free on Si(001) substrates. Deposition rates of C60 and Si were chosen adequately to maintain a Si:C ratio of approximately one during the deposition process. It was shown that stoichiometric and epitaxial 3C-SiC growth with the characteristic relationship (001)[110]Si(001)[110]3C-SiC could be achieved. TEM investigations revealed that the grown 3C-SiC films consist of individual grains that extend from the Si substrate to the film surface. Two characteristic grain types could be identified. The correlation between structure and texture of void-free grown 3C-SiC films and film thickness was studied by X-ray diffraction (XRD). Pole figure measurements showed that thin films only contain first-order 3C-SiC twins. With higher film thickness also second-order twins are found which are located as twin lamellae in grain type 2. Improvement of polar texture with increasing film thickness couldn't be observed in the investigated range of up to 550 nm. On ion beam synthesized 3C-SiC pseudo substrates homoepitaxial 3C-SiC growth could be demonstrated for the first time by using a C{sub 60} carbon source. In respect to the crystalline quality of the grown films the surface quality of the used substrates was identified as a crucial factor. Furthermore a correlation between the ratio of deposition rates of C{sub 60} and Si and 3C-SiC film quality could be found. Under silicon-rich conditions, i.e. with a Si:C ratio of slightly greater one, homoepitaxial 3C-SiC layer-by-layer growth can be achieved. Films grown under these

  8. The influence of wall thickness on the microstructure of bronze BA1055 with the additions of Si, Cr, Mo and/or W

    Directory of Open Access Journals (Sweden)

    B.P. Pisarek

    2008-12-01

    Full Text Available Aluminium bronzes belong to the high-grade constructional materials applied on the put under strongly load pieces of machines, about good sliding, resistant properties on corrosion both in the cast state how and after the thermal processing. It moves to them Cr and Si in the aim of the improvement of their usable proprieties. Additions Mo and/or W were not applied so far in the larger concentration, these elements were introduced to the melts of the copper as the components of modifiers. It was worked out therefore the new kind of bronzes casting including these elements. Make additions to the Cu-Al-Fe-Ni bronze of Si, Cr, Mo and/or W in the rise of these properties makes possible. The investigations of the influence of the wall thickness of the cast on size of crystallites were conducted: the primary phase β and intermetallic phase κ and the width separates of the secondary phase α precipitate at phase boundary. It results from conducted investigations, that in the aluminium bronze BA1055 after simultaneous makes additions Si, Cr, Mo and in the primary phase β it undergoes considerable reducing size. The addition W reduce size of the grain phase β in the thin walls of the cast 3-6 mm, and addition Cr in the range of the thickness of the wall of the cast 3-6 mm it favors to reducing size the phase β, in walls 12-25 mm the growth causes it. The addition Mo does not influence the change of the size of the grain of the β phase significantly. The make addition singly or simultaneously of the Cr, Mo and W to the bronze CuAl10Fe5Ni5Si it influences the decrease of the quantity separates of the phase α on the interface boundary and of width it separates independently from the thickness of the wall of the cast. The simultaneous make addition of the Si, Cr, Mo and W it enlarges the surface of the phase κFe, κMo. The make addition to the bronze CuAl10Fe5Ni5Si of the Cr, Mo or W the quantity of crystallizing hard phase κ enlarges and the

  9. Study of precipitation in Al–Mg–Si Alloys by atom probe tomography II. Influence of Cu additions

    International Nuclear Information System (INIS)

    Zandbergen, M.W.; Cerezo, A.; Smith, G.D.W.

    2015-01-01

    Atom probe tomography (APT) analysis and hardness measurements have been used to characterise the early stages of precipitation in three Al–Mg–Si alloys with different Cu contents (Al–0.51 at.%Mg–0.94 at.%Si, with 0.01 at.%, 0.06 at.%, or 0.34 at.% Cu). A range of single and multi- stage heat treatments were chosen to evaluate the changes in precipitation processes. Three ageing temperatures were investigated, 298 K (natural ageing), 353 K (pre-ageing) and 453 K (automotive paint-bake conditions). The Cu content had significant effects on the microstructural evolution within the alloy. Formation of clusters which can act as precursors of elongated precipitates during paint-baking was found to be enhanced with increasing Cu content. This improved the paint-bake hardening response and mitigated the deleterious effects of natural ageing. Cu was present in all precipitates in the highest Cu-containing alloy. These precipitates were believed to be precursors to the Q′ phase. Mechanisms for the effects of Cu on precipitation kinetics are proposed.

  10. Formation of Si-C-N ceramics from melamine-carbosilazane single source precursors

    International Nuclear Information System (INIS)

    Shatnawi, Mazin; Al-Mansi, Wafaa; Arafa, Isam

    2008-01-01

    A series of melamine-carbosilazane pre-ceramic macromolecules (Mel-CSZs) were prepared by the condensation of melamine with different organochlorosilanes (R x SiCl 4-x where R is CH 3 /C 6 H 5 and x is 1, 2 or 3) using pyridine as a solvent under nitrogen atmosphere. These melamine-based carbosilazane macromolecules (Mel-CSZs) were characterized by infrared spectroscopy (FT-IR), mass spectrometry (MS), thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). The backbone of the resulting Mel-CSZs consists of melamine and carbosilazane building blocks. Pyrolysis of these Mel-CSZs at 600 deg. C under nitrogen and vacuum afforded the corresponding silicon-based nonoxide carbonitride ceramics (Si-C-N). The microstructure and textural morphology of the resulting fine ceramic materials were examined using FT-IR, powder X-ray diffraction (XRD), and scanning electron microscopy (SEM). - Graphical abstract: Pyrolysis of the prepared melamine-organosilane macromolecules afforded Si-C-N ceramics with different textural morphology

  11. Thermodynamics of UO2 interaction with carbon in the presence of Al2O3xSiO2, SiC and UC2 additions

    International Nuclear Information System (INIS)

    Khromov, Yu.F.; Svistunov, D.E.; Zhmurov, S.A.

    1985-01-01

    Thermodynamics of carbon interaction with uranium dioxide containing additions of alumosilicates, silicon carbide and uranium dicarbide is studied within the temperature range from 1300 to 1900 K. Uranium dioxide behaviour is analyzed in such compositions under equilibrium and nonequilibrium conditions taking into consideration experimental and calculation data. Equations of reactions are presented and it is shown that silicon and aluminium formation can take place within the range of 1300-1800 K at residual CO pressure lower than 0.133 and 1330 Pa respectivey

  12. Elite sport is not an additional source of distress for adolescents with high stress levels.

    Science.gov (United States)

    Gerber, Markus; Holsboer-Trachsler, Edith; Pühse, Uwe; Brand, Serge

    2011-04-01

    This study examined whether participation in elite sport interacts with stress in decreasing or increasing symptoms of depression and anxiety among adolescents, and further, whether the interplay between participation in high-performance sport and stress is related to the perceived quality of sleep. 434 adolescents (278 girls, 156 boys; age: M = 17.2 yr.) from 15 "Swiss Olympic Sport Classes" and 9 conventional classes answered a questionnaire and completed a 7-day sleep log. Analyses of covariance showed that heightened stress was related to more depressive symptoms and higher scores for trait-anxiety. Moreover, those classified as having poor sleep by a median split cutoff reported higher levels of depressive symptoms. No significant (multivariate) main effects were found for high-performance sport athletes. Similarly, no significant two- or three-way interaction effects were found. These results caution against exaggerated expectations concerning sport participation as a stress buffer. Nevertheless, participation in high-performance sport was not found to be an additional source of distress for adolescents who reported high stress levels despite prior research that has pointed toward such a relationship.

  13. Experimental characterization and Monte Carlo simulation of Si(Li) detector efficiency by radioactive sources and PIXE

    Energy Technology Data Exchange (ETDEWEB)

    Mesradi, M. [Institut Pluridisciplinaire Hubert-Curien, UMR 7178 CNRS/IN2P3 et Universite Louis Pasteur, 23 rue du Loess, BP 28, F-67037 Strasbourg Cedex 2 (France); Elanique, A. [Departement de Physique, FS/BP 8106, Universite Ibn Zohr, Agadir, Maroc (Morocco); Nourreddine, A. [Institut Pluridisciplinaire Hubert-Curien, UMR 7178 CNRS/IN2P3 et Universite Louis Pasteur, 23 rue du Loess, BP 28, F-67037 Strasbourg Cedex 2 (France)], E-mail: abdelmjid.nourreddine@ires.in2p3.fr; Pape, A.; Raiser, D.; Sellam, A. [Institut Pluridisciplinaire Hubert-Curien, UMR 7178 CNRS/IN2P3 et Universite Louis Pasteur, 23 rue du Loess, BP 28, F-67037 Strasbourg Cedex 2 (France)

    2008-06-15

    This work relates to the study and characterization of the response function of an X-ray spectrometry system. The intrinsic efficiency of a Si(Li) detector has been simulated with the Monte Carlo codes MCNP and GEANT4 in the photon energy range of 2.6-59.5 keV. After finding it necessary to take a radiograph of the detector inside its cryostat to learn the correct dimensions, agreement within 10% between the simulations and experimental measurements with several point-like sources and PIXE results was obtained.

  14. X-ray photoelectron spectroscopy studies of nitridation on 4H-SiC (0001) surface by direct nitrogen atomic source

    International Nuclear Information System (INIS)

    Chai, J. W.; Pan, J. S.; Zhang, Z.; Wang, S. J.; Chen, Q.; Huan, C. H. A.

    2008-01-01

    A Si 3 N 4 passivation layer has been successfully grown on the 4H-SiC (0001) surface by direct atomic source nitridation at various substrate temperatures. In situ x-ray photoelectron spectroscopy measurements show that higher substrate temperature leads to higher nitridation rate and good crystallinity of the passivation layer. A thin oxynitride layer on the top of the Si 3 N 4 was observed due to the residual O in the vacuum system, but was decomposed during annealing. In the meantime, excess C was found to be effectively removed by the reactive atomic N source

  15. A FEATURE MOVIE OF SiO EMISSION 20-100 AU FROM THE MASSIVE YOUNG STELLAR OBJECT ORION SOURCE I

    International Nuclear Information System (INIS)

    Matthews, L. D.; Greenhill, L. J.; Goddi, C.; Humphreys, E. M. L.; Chandler, C. J.; Kunz, M. W.

    2010-01-01

    We present multi-epoch Very Long Baseline Array imaging of the 28 SiO v = 1 and v = 2, J = 1-0 maser emission toward the massive young stellar object (YSO) Orion Source I. Both SiO transitions were observed simultaneously with an angular resolution of ∼0.5 mas (∼0.2 AU for d = 414 pc) and a spectral resolution of ∼0.2 km s -1 . Here we explore the global properties and kinematics of the emission through two 19-epoch animated movies spanning 21 months (from 2001 March 19 to 2002 December 10). These movies provide the most detailed view to date of the dynamics and temporal evolution of molecular material within ∼20-100 AU of a massive (∼>8 M sun ) YSO. As in previous studies, we find that the bulk of the SiO masers surrounding Source I lie in an X-shaped locus; the emission in the south and east arms is predominantly blueshifted, and emission in the north and west is predominantly redshifted. In addition, bridges of intermediate-velocity emission are observed connecting the red and blue sides of the emission distribution. We have measured proper motions of over 1000 individual maser features and found that these motions are characterized by a combination of radially outward migrations along the four main maser-emitting arms and motions tangent to the intermediate-velocity bridges. We interpret the SiO masers as arising from a wide-angle bipolar wind emanating from a rotating, edge-on disk. The detection of maser features along extended, curved filaments suggests that magnetic fields may play a role in launching and/or shaping the wind. Our observations appear to support a picture in which stars with masses as high as at least 8 M sun form via disk-mediated accretion. However, we cannot yet rule out that the Source I disk may have been formed or altered following a recent close encounter.

  16. Influence of Nickel Addition on Properties of Secondary AlSi7Mg0.3 Alloy

    Directory of Open Access Journals (Sweden)

    Richtárech L.

    2015-06-01

    Full Text Available This paper deals with influence on segregation of iron based phases on the secondary alloy AlSi7Mg0.3 microstructure by nickel. Iron is the most common and harmful impurity in aluminum casting alloys and has long been associated with an increase of casting defects. In generally, iron is associated with the formation of Fe-rich intermetallic phases. It is impossible to remove iron from melt by standard operations. Some elements eliminates iron by changing iron intermetallic phase morphology, decreasing its extent and by improving alloy properties. Realization of experiments and results of analysis show new view on solubility of iron based phases during melt preparation with higher iron content and influence of nickel as iron corrector of iron based phases.

  17. Structure determination of the Si(001)-(2 x 1)-H reconstruction by surface X-ray diffraction: Weakening of the dimer bond by the addition of hydrogen

    DEFF Research Database (Denmark)

    Lauridsen, E.M.; Baker, J.; Nielsen, M.

    2000-01-01

    The atomic structure of the monohydride Si(001)-(2 x 1)-H reconstruction has been investigated by surface X-ray diffraction. Atomic relaxations down to the eighth layer have been determined. The bond length of the hydrogenated silicon dimers was found to be 2.47 +/- 0.02 Angstrom. which is longer...... than the dimer bond of the clean (2 x 1)-reconstructed Si(001) surface and also 5% longer than the bulk bond length of 2.35 Angstrom. The differences to the (2 x 1) structure of the clean surface are discussed in terms of the elimination of the weak pi-bond character of the dimer bond by the addition...

  18. Effect of Ca, Ce or K oxide addition on the activity of Ni/SiO{sub 2} catalysts for the methane decomposition reaction

    Energy Technology Data Exchange (ETDEWEB)

    Zapata, Beatriz; Torres-Garcia, Enelio [Instituto Mexicano del Petroleo, Programa de Procesos y Reactores, Eje C. 152, Mexico, D.F., C.P. 07730 (Mexico); Valenzuela, Miguel A.; Palacios, Jorge [Instituto Politecnico Nacional-ESIQIE, Lab. Catalisis y Materiales, Zacatenco, Mexico, D.F., C.P. 07738 (Mexico)

    2010-11-15

    To increase the activity and stability of Ni/SiO{sub 2} catalysts, a series of Ni-Ca, Ni-K and Ni-Ce promoted catalysts were prepared by successive impregnations. The textural properties, reducibility and catalytic performance in the methane decomposition reaction were investigated. The catalyst containing 30 wt.% Ni and 30 wt.% cerium oxide greatly increased the conversion of methane (90% of equilibrium value) and improved the stability, whereas the Ni-K and Ni-Ca were less active and stable than the Ni/SiO{sub 2} catalyst. The results suggest that Ce addition prevents the sintering of nickel particles during reduction process maintaining a random distribution between the silica and cerium oxide improving the distribution and migration of deposited carbon. (author)

  19. Transarterial chemoembolization of hepatocellular carcinoma in a rat model: the effect of additional injection of survivin siRNA to the treatment protocol

    International Nuclear Information System (INIS)

    Vogl, Thomas J.; Oppermann, Elsie; Qian, Jun; Imlau, Ulli; Tran, Andreas; Hamidavi, Yousef; Korkusuz, Huedayi; Bechstein, Wolf Otto; Nour-Eldin, Nour-Eldin Abdel-Rehim; Gruber-Rouh, Tatjana; Hammerstingl, Renate; Naguib, Nagy Naguib Naeem

    2016-01-01

    Transarterial chemoembolization is one of the most widely accepted interventional treatment options for treatment of hepatocellular carcinoma. Still there is a lack of a standard protocol regarding the injected chemotherapeutics. Survivin is an inhibitor of Apoptosis protein that functions to inhibit apoptosis, promote proliferation, and enhance invasion. Survivin is selectively up-regulated in many human tumors. Small interfering RNA (siRNA) can trigger an RNA interference response in mammalian cells and induce strong inhibition of specific gene expression including Survivin. The aim of the study is to assess the effectiveness of the additional injection of Survivin siRNA to the routine protocol of Transarterial Chemoembolization (TACE) for the treatment of hepatocellular carcinoma in a rat model. The study was performed on 20 male ACI rats. On day 0 a solid Morris Hepatoma 3924A was subcapsullary implanted in the liver. On day 12 MRI measurement of the initial tumor volume (V1) was performed. TACE was performed on day 13. The rats were divided into 2 groups; Group (A, n = 10) in which 0.1 mg mitomycin, 0.1 ml lipiodol and 5.0 mg degradable starch microspheres were injected in addition 2.5 nmol survivin siRNA were injected. The same agents were injected in Group (B,=10) without Survivin siRNA. MRI was repeated on day 25 to assess the tumor volume (V2). The tumor growth ratio (V2/V1) was calculated. Western blot and immunohistochemical analysis were performed. For group A the mean tumor growth ratio (V2/V1) was 1.1313 +/− 0.1381, and was 3.1911 +/− 0.1393 in group B. A statistically significant difference between both groups was observed regarding the inhibition of tumor growth (P < 0.0001) where Group A showed more inhibition compared to Group B. Similarly immunohistochemical analysis showed significantly lower (p < 0.002) VEGF staining in group A compared to group B. Western Blot analysis showed a similar difference in VEGF expression (P < 0.0001). The

  20. Meta-analysis on Methane Mitigating Properties of Saponin-rich Sources in the Rumen: Influence of Addition Levels and Plant Sources

    Directory of Open Access Journals (Sweden)

    Anuraga Jayanegara

    2014-10-01

    Full Text Available Saponins have been considered as promising natural substances for mitigating methane emissions from ruminants. However, studies reported that addition of saponin-rich sources often arrived at contrasting results, i.e. either it decreased methane or it did not. The aim of the present study was to assess ruminal methane emissions through a meta-analytical approach of integrating related studies from published papers which described various levels of different saponin-rich sources being added to ruminant feed. A database was constructed from published literature reporting the addition of saponin-rich sources at various levels and then monitoring ruminal methane emissions in vitro. Accordingly, levels of saponin-rich source additions as well as different saponin sources were specified in the database. Apart from methane, other related rumen fermentation parameters were also included in the database, i.e. organic matter digestibility, gas production, pH, ammonia concentration, short-chain fatty acid profiles and protozoal count. A total of 23 studies comprised of 89 data points met the inclusion criteria. The data obtained were subsequently subjected to a statistical meta-analysis based on mixed model methodology. Accordingly, different studies were treated as random effects whereas levels of saponin-rich source additions or different saponin sources were considered as fixed effects. Model statistics used were p-value and root mean square error. Results showed that an addition of increasing levels of a saponin-rich source decreased methane emission per unit of substrate incubated as well as per unit of total gas produced (ptea>quillaja, statistically they did not differ each other. It can be concluded that methane mitigating properties of saponins in the rumen are level- and source-dependent.

  1. Fracture mode, microstructure and temperature-dependent elastic moduli for thermoelectric composites of PbTe-PbS with SiC nanoparticle additions

    Science.gov (United States)

    Ni, Jennifer E.; Case, Eldon D.; Schmidt, Robert D.; Wu, Chun-I.; Hogan, Timothy P.; Trejo, Rosa M.; Lara-Curzio, Edgar; Kanatzidis, Mercouri G.

    2013-12-01

    Twenty-six (Pb0.95Sn0.05Te)0.92(PbS)0.08-0.055% PbI2-SiC nanoparticle (SiCnp) composite thermoelectric specimens were either hot pressed or pulsed electric current sintered (PECS). Bloating (a thermally induced increase in porosity, P, for as-densified specimens) was observed during annealing at temperatures >603 K for hot-pressed specimens and PECS-processed specimens from wet milled powders, but in contrast seven out of seven specimens densified by PECS from dry milled powders showed no observable bloating following annealing at temperatures up to 936 K. In this study, bloating in the specimens was accessed via thermal annealing induced changes in (i) porosity measured by scanning electron microscopy on fractured specimen surfaces, (ii) specimen volume and (iii) elastic moduli. The moduli were measured by resonant ultrasound spectroscopy. SiCnp additions (1-3.5 vol.%) changed the fracture mode from intergranular to transgranular, inhibited grain growth, and limited bloating in the wet milled PECS specimens. Inhibition of bloating likely occurs due to cleaning of contamination from powder particle surfaces via PECS processing which has been reported previously in the literature.

  2. Effects of Cu and Ag additions on age-hardening behavior during multi-step aging in Al--Mg--Si alloys

    International Nuclear Information System (INIS)

    Kim, JaeHwang; Daniel Marioara, Calin; Holmestad, Randi; Kobayashi, Equo; Sato, Tatsuo

    2013-01-01

    Low Cu and Ag additions (≤0.10 at%) were found to strongly affect the age-hardening behavior in Al--Mg--Si alloys with Mg+Si>1.5 at%. The hardness increased during aging at 170 °C and the formation of β ″ precipitates was kinetically accelerated. The activation energy of the formation of the β ″ phase was calculated to 127, 105, 108 and 99 KJmol −1 in the base, Cu-added, Ag-added and Cu--Ag-added alloys, respectively using the Kissinger method. The negative effect of two-step aging caused by the formation of Cluster (1) during natural aging was not overcome by the addition of microalloying elements. However, it was suppressed by the formation of Cluster (2) through a pre-aging at 100 °C. Quantitative analysis of the precipitate microstructure was performed using a transmission electron microscope equipped with a parallel electron energy loss spectrometer for the determination of specimen thickness. The formation of Cluster (2) was found to increase the number density of β ″ precipitates, whereas the formation of Cluster (1) decreased the number density and increased the needle length. The effects of low Cu and Ag additions in combination with multi-step aging are discussed based on microstructure observations and hardness and resistivity measurements.

  3. Effect of Ni Addition on the Wear and Corrosion Resistance of Fe-20Cr-1.7C-1Si Hardfacing Alloy

    International Nuclear Information System (INIS)

    Lee, Sung Hoon; Kim, Ki Nam; Kim, Seon Jin

    2011-01-01

    In order to improve the corrosion resistance of Fe-20Cr-1.7C-1Si hardfacing alloy without a loss of wear resistance, the effect of Ni addition was investigated. As expected, the corrosion resistance of the alloy increased with increasing Ni concentration. The wear resistance of the alloy did not decrease, even though the hardness decreased, up to Ni concentration of 5 wt.%. This was attributed to the fact that the decrease in hardness was counterbalanced by the strain-induced martensitic transformation. The wear resistance of the alloy, however, decreased abruptly with increases of the Ni concentration over 5 wt.%.

  4. Investigating the addition of SiO₂-CaO-ZnO-Na₂O-TiO₂ bioactive glass to hydroxyapatite: Characterization, mechanical properties and bioactivity.

    Science.gov (United States)

    Yatongchai, Chokchai; Placek, Lana M; Curran, Declan J; Towler, Mark R; Wren, Anthony W

    2015-11-01

    Hydroxyapatite (Ca10(PO4)6(OH)2) is widely investigated as an implantable material for hard tissue restoration due to its osteoconductive properties. However, hydroxyapatite in bulk form is limited as its mechanical properties are insufficient for load-bearing orthopedic applications. Attempts have been made to improve the mechanical properties of hydroxyapatite, by incorporating ceramic fillers, but the resultant composite materials require high sintering temperatures to facilitate densification, leading to the decomposition of hydroxyapatite into tricalcium phosphate, tetra-calcium phosphate and CaO phases. One method of improving the properties of hydroxyapatite is to incorporate bioactive glass particles as a second phase. These typically have lower softening points which could possibly facilitate sintering at lower temperatures. In this work, a bioactive glass (SiO2-CaO-ZnO-Na2O-TiO2) is incorporated (10, 20 and 30 wt%) into hydroxyapatite as a reinforcing phase. X-ray diffraction confirmed that no additional phases (other than hydroxyapatite) were formed at a sintering temperature of 560 ℃ with up to 30 wt% glass addition. The addition of the glass phase increased the % crystallinity and the relative density of the composites. The biaxial flexural strength increased to 36 MPa with glass addition, and there was no significant change in hardness as a function of maturation. The pH of the incubation media increased to pH 10 or 11 through glass addition, and ion release profiles determined that Si, Na and P were released from the composites. Calcium phosphate precipitation was encouraged in simulated body fluid with the incorporation of the bioactive glass phase, and cell culture testing in MC-3T3 osteoblasts determined that the composite materials did not significantly reduce cell viability. © The Author(s) 2015.

  5. Effects of Ce and Zr addition on microstructure and hardness of Al-Si-Cu-Mg alloy

    International Nuclear Information System (INIS)

    Bevilaqua, William Lemos; Reguly, Afonso; Froehlich, Andre Ronaldo; Stadtlander, Antonio Ricardo

    2016-01-01

    The effects of cerium and zirconium contents (0.3%-0.16%Zr; 0.3%-0.27%Zr e 0.3%-0.36%Zr) to aluminum alloy 354.0 was investigated by microstructural analysis and hardness measurements in as-cast and heat-treated conditions. The macrostructure show an excellent grain refinement for all Ce and Zr contents used. Additionally, the Cu-Ce reaction during solidification changes significantly the age hardening process of modified alloys. (author)

  6. Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs

    Science.gov (United States)

    Bae, Tae-Eon; Wakabayashi, Yuki; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Improvement in the performance of Ge-source/Si-channel heterojunction tunneling FETs (TFETs) with high on-current/off-current (I on/I off) ratio and steep subthreshold swing (SS) is demonstrated. In this paper, we experimentally examine the effects of gas ambient [N2 and forming gas (4% H2/N2)] and a doping concentration in the drain regions on the electrical characteristics of Ge/Si heterojunction TFETs. The minimum SS (SSmin) of 70.9 mV/dec and the large I on/I off ratio of 1.4 × 107 are realized by postmetallization annealing in forming gas. Also, the steep SSmin and averaged SS (SSavr) values of 64.2 and 78.4 mV/dec, respectively, are obtained in low drain doping concentration. This improvement is attributable to the reduction in interface state density (D it) in the channel region and to the low leakage current in the drain region.

  7. On the addition of heat to solar pond from external sources

    NARCIS (Netherlands)

    Ganguly, S.; Jain, Ravi; Date, Abhijit; Akbarzadeh, Aliakbar

    2017-01-01

    This brief note addresses the method of adding heat to a solar pond from an external source which is used to enhance the performance of a solar pond. Heat energy collected by Evacuated Tube Solar Collectors (ETSC) is transferred by circulating fluid from the Lower Convective Zone (LCZ) of a solar

  8. External Carbon Source Addition as a Means to Control an Activated Sludge Nutrient Removal Process

    DEFF Research Database (Denmark)

    Isaacs, Steven Howard; Henze, Mogens; Søeberg, Henrik

    1994-01-01

    In alternating type activated sludge nutrient removal processes, the denitrification rate can be limited by the availability of readily-degradable carbon substrate. A control strategy is proposed by which an easily metabolizable COD source is added directly to that point in the process at which d...

  9. A new direct growth method of graphene on Si-face of 6H-SiC by synergy of the inner and external carbon sources

    Science.gov (United States)

    Yang, Zhiyuan; Xu, Shicai; Zhao, Lili; Zhang, Jing; Wang, Zhengping; Chen, Xiufang; Cheng, Xiufeng; Yu, Fapeng; Zhao, Xian

    2018-04-01

    Graphene is a promising two-dimensional material that has possible application in various disciplines, due to its super properties, including high carrier mobility, chemical stability, and optical transparency etc. In this paper, we report an inner and external carbon synergy (IECS) method to grow graphene on Si-face of 6H-SiC. This method combined the advantages of chemical vapor deposition (CVD) and traditional epitaxial growth (EG) based on silicon carbide, which providing a feasible approach for growing graphene on the SiC substrates. The graphene was synthesized within just 3 min, which was more than one order of magnitude faster than the graphene grown on 6H-SiC substrates by the traditional EG method. The growth temperature was ∼200 °C lower than the EG process. The directly grown graphene maintained the compatibility with the semiconductor technique, which is benefit for use in graphene-based microelectronic devices.

  10. Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

    Energy Technology Data Exchange (ETDEWEB)

    Kim, H.; Glass, G.; Spila, T.; Taylor, N.; Park, S.Y.; Abelson, J.R.; Greene, J.E. [Department of Materials Science, Coordinated Science Laboratory, and Materials Research Laboratory, University of Illinois, 1101 West Springfield, Urbana, Illinois 61801 (United States)

    1997-09-01

    B-doped Si(001) films, with concentrations C{sub B} up to 1.7{times}10{sup 22}cm{sup {minus}3}, were grown by gas-source molecular-beam epitaxy from Si{sub 2}H{sub 6} and B{sub 2}H{sub 6} at T{sub s}=500{endash}800{degree}C. D{sub 2} temperature-programed desorption (TPD) spectra were then used to determine B coverages {theta}{sub B} as a function of C{sub B} and T{sub s}. In these measurements, as-deposited films were flash heated to desorb surface hydrogen, cooled, and exposed to atomic deuterium until saturation coverage. Strong B surface segregation was observed with surface-to-bulk B concentration ratios ranging up to 1200. TPD spectra exhibited {beta}{sub 2} and {beta}{sub 1} peaks associated with dideuteride and monodeuteride desorption as well as lower-temperature B-induced peaks {beta}{sub 2}{sup {asterisk}} and {beta}{sub 1}{sup {asterisk}}. Increasing {theta}{sub B} increased the area under {beta}{sub 2}{sup {asterisk}} and {beta}{sub 1}{sup {asterisk}} at the expense of {beta}{sub 2} and {beta}{sub 1} and decreased the total D coverage {theta}{sub D}. The TPD results were used to determine the B segregation enthalpy, {minus}0.53eV, and to explain and model the effects of high B coverages on Si(001) growth kinetics. Film deposition rates R increase by {ge}50{percent} with increasing C{sub B}{tilde {gt}}1{times}10{sup 19}cm{sup {minus}3} at T{sub s}{le}550{degree}C, due primarily to increased H desorption rates from B-backbonded Si adatoms, and decrease by corresponding amounts at T{sub s}{ge}600{degree}C due to decreased adsorption site densities. At T{sub s}{ge}700{degree}C, high B coverages also induce {l_brace}113{r_brace} facetting. {copyright} {ital 1997 American Institute of Physics.}

  11. Effect of the AlCr20 Addition on the Microstructure of Secondary AlSi7Mg0.3 Alloy

    Directory of Open Access Journals (Sweden)

    Bolibruchová D.

    2014-06-01

    Full Text Available This paper deals with influence of chrome addition and heat treatment on segregation of iron based phases in the secondary alloy AlSi7Mg0.3 microstructure by chrome and heat treatment. Iron is the most common and harmful impurity in aluminum casting alloys and has long been associated with an increase of casting defects. In generally, iron is associated with the formation of Fe-rich intermetallic phases. It is impossible to remove iron from melt by standard operations, but it is possible to eliminate its negative influence by addition some other elements that affect the segregation of intermetallics in less harmful type or by heat treatment. Realization of experiments and results of analysis show new view on solubility of iron based phases during melt preparation with higher iron content and influence of chrome as iron corrector of iron based phases.

  12. Effect of additional sample bias in Meshed Plasma Immersion Ion Deposition (MPIID) on microstructural, surface and mechanical properties of Si-DLC films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Mingzhong [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Tian, Xiubo, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Li, Muqin [School of Materials Science & Engineering, Jiamusi University, Jiamusi 154007 (China); Gong, Chunzhi [State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, Harbin 150001 (China); Wei, Ronghua [Southwest Research Institute, San Antonio, TX 78238 (United States)

    2016-07-15

    Highlights: • A novel Meshed Plasma Immersion Ion Deposition is proposed. • The deposited Si-DLC films possess denser structures and high deposition rate. • It is attributed to ion bombardment of the deposited films. • The ion energy can be independently controlled by an additional bias (novel set up). - Abstract: Meshed Plasma Immersion Ion Deposition (MPIID) using cage-like hollow cathode discharge is a modified process of conventional PIID, but it allows the deposition of thick diamond-like carbon (DLC) films (up to 50 μm) at a high deposition rate (up to 6.5 μm/h). To further improve the DLC film properties, a new approach to the MPIID process is proposed, in which the energy of ions incident to the sample surface can be independently controlled by an additional voltage applied between the samples and the metal meshed cage. In this study, the meshed cage was biased with a pulsed DC power supply at −1350 V peak voltage for the plasma generation, while the samples inside the cage were biased with a DC voltage from 0 V to −500 V with respect to the cage to study its effect. Si-DLC films were synthesized with a mixture of Ar, C{sub 2}H{sub 2} and tetramethylsilane (TMS). After the depositions, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectrons spectroscopy (XPS), Raman spectroscopy and nanoindentation were used to study the morphology, surface roughness, chemical bonding and structure, and the surface hardness as well as the modulus of elasticity of the Si-DLC films. It was observed that the intense ion bombardment significantly densified the films, reduced the surface roughness, reduced the H and Si contents, and increased the nanohardness (H) and modulus of elasticity (E), whereas the deposition rate decreased slightly. Using the H and E data, high values of H{sup 3}/E{sup 2} and H/E were obtained on the biased films, indicating the potential excellent mechanical and tribological properties of the films. In this

  13. Growth and sporulation of Trichoderma polysporum on organic substrates by addition of carbon and nitrogen sources

    International Nuclear Information System (INIS)

    Rajput, A.Q.; Shahzad, S.

    2015-01-01

    During the present study nine different organic substrates viz., rice grains, sorghum grains, wheat grains, millet grains, wheat straw, rice husk, cow dung, sawdust and poultry manure were used for mass multiplication of Trichoderma polysporum. Grains, especially sorghum grains were found to be the best substrate for T. polysporum. Wheat straw and rice husk were less suitable, whereas, cow dung, sawdust and poultry manure were not suitable for growth of the fungus. Sucrose at the rate of 30,000 ppm and ammonium nitrate at the rate of 3,000 ppm were found to be the best carbon and nitrogen sources for growth and sporulation of T. polysporum. Amendment of the selected C and N sources to wheat straw, rice husk and millet grains resulted in significantly higher growth and conidia production by T. polysporum as compared to un-amended substrates. Sorghum and rice grains showed suppression in growth and sporulation of T. polysporum when amended with C and N sources. During studies on shelf life, populations of T. polysporum attained the peck at 60-135 days intervals on different substrates and declined gradually thereafter. However, even after 330 days, the populations were greater than the population at 0-day. At 345-360 days interval, populations were less than the initial populations at 0- days. Shelf life on C+N amended wheat straw and rice husk were more as compared to un-amended substrates. (author)

  14. The Addition of Several Mineral Sources on Growing Media of Fluorescent Pseudomonad for the Biosynthesis of Hydrogen Cyanide

    Science.gov (United States)

    Advinda, L.; Fifendy, M.; Anhar, A.

    2018-04-01

    All Fluorescent pseudomonad is a group of rhyzobacteria which these days often utilized on plant disease control. The growing media is an absolute requirement which needs to be considered for the growth and cultivation of bacteria. The mineral source contained in growing media of bacteria may affect the production of hydrogen cyanide compound. The objectives of the research were to obtain the best source of minerals for biosynthesis of cyanide acid compounds by fluorescent pseudomonad isolates PfPj1, PfPb1, PfPj2, Kd7, Cas, Cas3, and LAHp2. This research is a qualitative experimental research including observation of hydrogen cyanide compound produced after the growing media of fluorescent pseudomonad bacteria added with several mineral sources. The treatments were given: A = ZnSO4.7H2O 0.5 mM addition, B = CoCl2.6H2O 0.5 mM addition, and C = Fe2SO4.7H2O 0.5 mM addition. From the result of the research, it was concluded that the addition of ZnSO4.7H2O mineral resources on the growing media of fluorescent pseudomonad isolate Cas and Cas3 produced the best hydrogen cyanide. Whereas addition of CoCl2.6H2O mineral source on the growing media showed poor hydrogen cyanide production for all fluorescent pseudomonad isolates

  15. Crystal growth and characterization of fluorescent SiC

    DEFF Research Database (Denmark)

    Wellmann, P.; Kaiser, M.; Hupfer, T.

    -SiC co-doped with nitrogen and boron has been achieved [1][2]. The source is the rate determining step, and is expected to be determining the fluorescent properties by introducing dopants to the layer from the source. The optimization process of the polycrystalline, co-doped SiC:B,N source material...... and its impact on the FSPG epitaxial process, in particular the influence on the brightness of the is presented. In particular, the doping properties of the poly-SiC source material influence on the brightness of the fluorescent 6H-SiC. In addition we have investigated how the grain orientation...

  16. Si/SiC-based DD hetero-structure IMPATTs as MM-wave power-source: a generalized large-signal analysis

    International Nuclear Information System (INIS)

    Mukherjee, Moumita; Tripathy, P. R.; Pati, S. P.

    2015-01-01

    A full-scale, self-consistent, non-linear, large-signal model of double-drift hetero-structure IMPATT diode with general doping profile is derived. This newly developed model, for the first time, has been used to analyze the large-signal characteristics of hexagonal SiC-based double-drift IMPATT diode. Considering the fabrication feasibility, the authors have studied the large-signal characteristics of Si/SiC-based hetero-structure devices. Under small-voltage modulation (∼ 2%, i.e. small-signal conditions) results are in good agreement with calculations done using a linearised small-signal model. The large-signal values of the diode's negative conductance (5 × 10 6 S/m 2 ), susceptance (10.4 × 10 7 S/m 2 ), average breakdown voltage (207.6 V), and power generating efficiency (15%, RF power: 25.0 W at 94 GHz) are obtained as a function of oscillation amplitude (50% of DC breakdown voltage) for a fixed average current density. The large-signal calculations exhibit power and efficiency saturation for large-signal (> 50%) voltage modulation and thereafter decrease gradually with further increasing voltage-modulation. This generalized large-signal formulation is applicable for all types of IMPATT structures with distributed and narrow avalanche zones. The simulator is made more realistic by incorporating the space-charge effects, realistic field and temperature dependent material parameters in Si and SiC. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form. This study will act as a guide for researchers to fabricate a high-power Si/SiC-based IMPATT for possible application in high-power MM-wave communication systems. (paper)

  17. Formation of aluminum titanate with small additions of MgO and SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Guedes-Silva, Cecilia Chaves; Ferreira, Thiago dos Santos; Genova, Luis Antonio [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Carvalho, Flavio Machado de Souza, E-mail: cecilia.guedes@ipen.br [Universidade de Sao Paulo (USP), Sao Paulo, SP (Brazil). Instituto de Geociencias

    2016-03-15

    The formation of aluminum titanate was investigated by isothermal treatments of samples obtained from equimolar mixtures of alumina and titania, containing small amounts of silica and magnesia. Results of differential thermal analysis and Rietveld refinements of data collected by X-ray powder diffraction (XRPD) showed that additions of silica in amounts used in this work did not influence the formation of aluminum titanate. However, the presence of magnesia favored the formation of aluminum titanate in two steps, first one by incorporating Mg{sup 2+} into Al{sub 2}TiO{sub 5} lattice during its initial formation, and the second one by accelerating the Al{sub 2}TiO{sub 5} formation, contributing to large quantities of this phase. MgO doped samples have also developed a more suitable microstructure for stabilizing of Al{sub 2}TiO{sub 5}, what make them promising for applications such as thermal barriers, internal combustion engines and support material for catalyst. (author)

  18. A radio/optical reference frame. 5: Additional source positions in the mid-latitude southern hemisphere

    Science.gov (United States)

    Russell, J. L.; Reynolds, J. E.; Jauncey, D. L.; de Vegt, C.; Zacharias, N.; Ma, C.; Fey, A. L.; Johnston, K. J.; Hindsley, R.; Hughes, J. A.; Malin, D. F.; White, G. L.; Kawaguchi, N.; Takahashi, Y.

    1994-01-01

    We report new accurate radio position measurements for 30 sources, preliminary positions for two sources, improved radio postions for nine additional sources which had limited previous observations, and optical positions and optical-radio differences for six of the radio sources. The Very Long Baseline Interferometry (VLBI) observations are part of the continuing effort to establish a global radio reference frame of about 400 compact, flat spectrum sources, which are evenly distributed across the sky. The observations were made using Mark III data format in four separate sessions in 1988-89 with radio telescopes at Tidbinbilla, Australia, Kauai, USA, and Kashima, Japan. We observed a total of 54 sources, including ten calibrators and three which were undetected. The 32 new source positions bring the total number in the radio reference frame catalog to 319 (172 northern and 147 southern) and fill in the zone -25 deg greater than delta greater than -45 deg which, prior to this list, had the lowest source density. The VLBI positions have an average formal precision of less than 1 mas, although unknown radio structure effects of about 1-2 mas may be present. The six new optical postion measurements are part of the program to obtain positions of the optical counterparts of the radio reference frame source and to map accurately the optical on to the radio reference frames. The optical measurements were obtained from United States Naval Observatory (USNO) Black Birch astrograph plates and source plates from the AAT, and Kitt Peak National Observatory (KPNO) 4 m, and the European Southern Observatory (ESO) Schmidt. The optical positions have an average precision of 0.07 sec, mostly due to the zero point error when adjusted to the FK5 optical frame using the IRS catalog. To date we have measured optical positions for 46 sources.

  19. High-current and low acceleration voltage arsenic ion implanted polysilicon-gate and source-drain electrode Si mos transistor

    International Nuclear Information System (INIS)

    Saito, Yasuyuki; Sugimura, Yoshiro; Sugihara, Michiyuki

    1993-01-01

    The fabrication process of high current arsenic (As) ion implanted polysilicon (Si) gate and source drain (SD) electrode Si n-channel metal oxide-semiconductor field effect transistor (MOSFET) was examined. Poly Si film n-type doping was performed by using high current (typical current: 2mA) and relatively low acceleration voltage (40keV) As ion implantation technique (Lintott series 3). It was observed that high dose As implanted poly Si films as is show refractoriness against radical fluorine excited by microwave. Using GCA MANN4800 (m/c ID No.2, resist: OFPR) mask pattern printing technique, the high current As ion implantation technique and radical fluorine gas phase etching (Chemical dry etching: CDE) technique, the n-channel Poly Si gate (ρs = ≅100Ω/□) enhancement MQSFETs(ρs source drain = ≅50Ω/□, SiO 2 gate=380 angstrom) with off-leak-less were obtained on 3 inch Czochralski grown 2Ωcm boron doped p type wafers (Osaka titanium). By the same process, a 8 bit single chip μ-processor with 26MHz full operation was performed

  20. Effects of the addition of different nitrogen sources in the tequila fermentation process at high sugar concentration.

    Science.gov (United States)

    Arrizon, J; Gschaedler, A

    2007-04-01

    To study the effect of the addition of different nitrogen sources at high sugar concentration in the tequila fermentation process. Fermentations were performed at high sugar concentration (170 g l(-1)) using Agave tequilana Weber blue variety with and without added nitrogen from different sources (ammonium sulfate; glutamic acid; a mixture of ammonium sulfate and amino acids) during the exponential phase of growth. All the additions increased the fermentation rate and alcohol efficiency. The level of synthesis of volatile compounds depended on the source added. The concentration of amyl alcohols and isobutanol were decreased while propanol and acetaldehyde concentration increased. The most efficient nitrogen sources for fermentation rate were ammonium sulfate and the mixture of ammonium sulfate and amino acids. The level of volatile compounds produced depended upon types of nitrogen. The synthesis of some volatile compounds increased while others decreased with nitrogen addition. The addition of nitrogen could be a strategy for improving the fermentation rate and efficiency in the tequila fermentation process at high sugar Agave tequilana concentration. Furthermore, the sensory quality of the final product may change because the synthesis of the volatile compounds is modified.

  1. Les objets mobiliers des XIXe et XXe siècles : les sources

    OpenAIRE

    Finance, Laurence de

    2012-01-01

    L’étude scientifique de tout objet ne peut se concevoir sans une recherche dans les sources documentaires. Qu’il s’agisse d’archives publiques ou privées, de legs faits à des musées ou autres institutions patrimoniales, la quête de renseignements est une nécessité pour suivre l’objet étudié depuis sa création jusqu’à son étude faite in Situ. De nos jours, de nombreuses ressources sont mises en ligne, notamment sur le site du ministère de la culture et de la communication ; accessibles à tous,...

  2. Synthesis of pigments of Fe2O3·SiO2 system, with Ca, Mg, or Co oxide additions

    Directory of Open Access Journals (Sweden)

    Tsvetan Dimitrov

    2017-03-01

    Full Text Available The present research work is based on the comparative evaluation of the Ca, Mg, and Co dopant impact on the properties of new ceramic pigments from the system Fe2O3·SiO2 obtained via classical ceramic technology. This approach enabled determination of the optimal temperature for the synthesis and the most appropriate mineralizer. The obtained specimens were submitted to systematical analysis, including X-ray Diffraction (XRD spectroscopy, Electron Paramagnetic Resonance (EPR analysis and Mössbauer spectroscopy for crystalline phase determination. The color characteristics are quantified by spectrophotometric measurements. The pigments particle size has been determined by Scanning Electron Microscopy (SEM, combined by Energy Dispersion X-ray spectroscopy (EDX. The obtained results enabled to determine the correlation between the calcination temperature and the phase compositions of the obtained pigments. In addition, some interesting magnetic properties were detected for the Co-doped composition.

  3. Additional beta-delayed protons from the T/sub z/ = -3/2 nuclei 21Mg, 25Si, 29S, and 41Ti

    International Nuclear Information System (INIS)

    Zhou, Z.Y.; Schloemer, E.C.; Cable, M.D.; Ahmed, M.; Reiff, J.E.; Cerny, J.

    1985-01-01

    Beta-delayed proton emission has proven to be a useful tool for understanding nuclei far from stability. Most of the beta decay strength is concentrated at and below the isobaric analog state (IAS) of the parent nucleus (precursor) ground state. Identification of beta strength to states above the IAS is important not only because it provides additional tests of nuclear models of beta decay, but also because proton emission from such beta daughter nuclei frequently constitutes an important component of the background in searches for more exotic nuclei. Therefore the authors have re-measured the beta-delayed proton spectra of four T/sub z/ = -3/2 nuclei: 21 Mg, 25 Si, 29 S, and 41 Ti. Fourteen previously unreported proton groups were observed and beta decay branching ratios were derived for each

  4. Wear- and heat resistance of vacuum-arc TiN and TiAlN based coatings with Si and Y additives

    International Nuclear Information System (INIS)

    Aksenov, I.I.; Belous, V.A.; Grigor'ev, A.N.; Ermolenko, I.G.; Zadneprovskij, Yu.A.; Kovalenko, V.I.; Lomino, N.S.; Marinin, V.G.; Tolmacheva, G.N.; Sobol', O.V.

    2011-01-01

    It is shown, that insertion of silicon additives into TiN coatings and of yttrium into TiAlN coatings in explored limits (to a few wht. %) leads to increasing of resistance against abrasive friction wear. At the same time silicon or yttrium presence in the coatings leads to loos of their columnar structure and demonstrate decrease in the cavitation resistance. It is supposed, that such distinction in behaviour of the given working performances is a consequence of that mechanisms of the coating surface fracture at action of cavitation and abrasive friction are different. All explored coatings of (Ti-Si)N composition are not oxidised up to 600 o C, and of (Ti-Al-Y)N coatings - up to 800 o C.

  5. Synthesis of pigments of Fe2O3·SiO2 system, with Ca, Mg, or Co oxide additions

    Energy Technology Data Exchange (ETDEWEB)

    Dimitrov, T.; Kozhukharov, S.; Velinov, N.

    2017-07-01

    The present research work is based on the comparative evaluation of the Ca, Mg, and Co dopant impact on the properties of new ceramic pigments from the system Fe2O3·SiO2 obtained via classical ceramic technology. This approach enabled determination of the optimal temperature for the synthesis and the most appropriate mineralizer. The obtained specimens were submitted to systematical analysis, including X-ray Diffraction (XRD) spectroscopy, Electron Paramagnetic Resonance (EPR) analysis and Mössbauer spectroscopy for crystalline phase determination. The color characteristics are quantified by spectrophotometric measurements. The pigments particle size has been determined by Scanning Electron Microscopy (SEM), combined by Energy Dispersion X-ray spectroscopy (EDX). The obtained results enabled to determine the correlation between the calcination temperature and the phase compositions of the obtained pigments. In addition, some interesting magnetic properties were detected for the Co-doped composition. (Author)

  6. Modeling the Influence of Process Parameters and Additional Heat Sources on Residual Stresses in Laser Cladding

    Science.gov (United States)

    Brückner, F.; Lepski, D.; Beyer, E.

    2007-09-01

    In laser cladding thermal contraction of the initially liquid coating during cooling causes residual stresses and possibly cracks. Preweld or postweld heating using inductors can reduce the thermal strain difference between coating and substrate and thus reduce the resulting stress. The aim of this work is to better understand the influence of various thermometallurgical and mechanical phenomena on stress evolution and to optimize the induction-assisted laser cladding process to get crack-free coatings of hard materials at high feed rates. First, an analytical one-dimensional model is used to visualize the most important features of stress evolution for a Stellite coating on a steel substrate. For more accurate studies, laser cladding is simulated including the powder-beam interaction, the powder catchment by the melt pool, and the self-consistent calculation of temperature field and bead shape. A three-dimensional finite element model and the required equivalent heat sources are derived from the results and used for the transient thermomechanical analysis, taking into account phase transformations and the elastic-plastic material behavior with strain hardening. Results are presented for the influence of process parameters such as feed rate, heat input, and inductor size on the residual stresses at a single bead of Stellite coatings on steel.

  7. Deposition of multicomponent chromium carbide coatings using a non-conventional source of chromium and silicon with micro-additions of boron

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez Ruiz, Jesus Eduardo, E-mail: jesus.gonzalez@biomat.uh.cu [Biomaterials Center, University of Havana (Cuba); Rodriguez Cristo, Alejandro [Mechanical Plants Company, Road of the Sub-Plan, Farm La Cana, Santa Clara, Villa Clara (Cuba); Ramos, Adrian Paz [Department of Chemistry, Universite de Montreal, Quebec (Canada); Quintana Puchol, Rafael [Welding Research Center, Central University Marta Abreu of Las Villas, Villa Clara (Cuba)

    2017-01-15

    The chromium carbide coatings are widely used in the mechanical industry due to its corrosion resistance and mechanical properties. In this work, we evaluated a new source of chromium and silicon with micro-additions of boron on the deposition of multi-component coatings of chromium carbides in W108 steel. The coatings were obtained by the pack cementation method, using a simultaneous deposition at 1000 deg for 4 hours. The coatings were analyzed by X-ray diffraction, X-ray energy dispersive spectroscopy, optical microscopy, microhardness test method and pin-on-disc wear test. It was found that the coatings formed on W108 steel were mainly constituted by (Cr,Fe){sub 23}C{sub 6} , (Cr,Fe){sub 7} C{sub 3} , Cr{sub 5-x}Si{sub 3-x} C{sub x+z}, Cr{sub 3} B{sub 0,44}C{sub 1,4} and (or) Cr{sub 7} BC{sub 4} . The carbide layers showed thicknesses between 14 and 15 μm and maximum values of microhardness between 15.8 and 18.8 GPa. Also, the micro-additions of boron to the mixtures showed statistically significant influence on the thickness, microhardness and abrasive wear resistance of the carbide coatings. (author)

  8. High Temperature Thermoplastic Additive Manufacturing Using Low-Cost, Open-Source Hardware

    Science.gov (United States)

    Gardner, John M.; Stelter, Christopher J.; Yashin, Edward A.; Siochi, Emilie J.

    2016-01-01

    Additive manufacturing (or 3D printing) via Fused Filament Fabrication (FFF), also known as Fused Deposition Modeling (FDM), is a process where material is placed in specific locations layer-by-layer to create a complete part. Printers designed for FFF build parts by extruding a thermoplastic filament from a nozzle in a predetermined path. Originally developed for commercial printers, 3D printing via FFF has become accessible to a much larger community of users since the introduction of Reprap printers. These low-cost, desktop machines are typically used to print prototype parts or novelty items. As the adoption of desktop sized 3D printers broadens, there is increased demand for these machines to produce functional parts that can withstand harsher conditions such as high temperature and mechanical loads. Materials meeting these requirements tend to possess better mechanical properties and higher glass transition temperatures (Tg), thus requiring printers with high temperature printing capability. This report outlines the problems and solutions, and includes a detailed description of the machine design, printing parameters, and processes specific to high temperature thermoplastic 3D printing.

  9. Influence of fluoride additions on biological and mechanical properties of Na2O–CaO–SiO2–P2O5 glass–ceramics

    International Nuclear Information System (INIS)

    Li, H.C.; Wang, D.G.; Hu, J.H.; Chen, C.Z.

    2014-01-01

    Two series of Na 2 O–CaO–SiO 2 –P 2 O 5 glass–ceramics doped with NH 4 HF 2 (G-NH 4 HF 2 ) or CaF 2 (G-CaF 2 ) have been prepared by sol–gel method. The glass–ceramic phase composition and morphology were characterized by X-ray diffraction (XRD) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM-EDS). The mechanical properties and thermal expansion coefficient were measured by a microhardness tester, an electronic tensile machine and a thermal expansion coefficient tester. The structure difference between these two glass–ceramics was investigated by Fourier transform infrared spectroscopy (FTIR), and the in vitro bioactivity of the glass–ceramics was determined by in vitro simulated body fluid (SBF) immersion test. The hemolysis test, in vitro cytotoxicity test, systemic toxicity test and the implanted experiment in animals were used to evaluate the biocompatibility of the glass–ceramics. The mechanical properties of sample G-NH 4 HF 2 are lower than that of sample G-CaF 2 , and the bioactivity of sample G-NH 4 HF 2 is better than that of sample G-CaF 2 . The thermal expansion coefficients of these two glass–ceramics are all closer to that of Ti6Al4V. After 7 days of SBF immersion, apatites were induced on glass–ceramic surface, indicating that the glass–ceramics have bioactivity. The hemolysis test, in vitro cytotoxicity test and systemic toxicity test demonstrate that the glass–ceramics do not cause hemolysis reaction, and have no toxicity to cell and living animal. The implanted experiment in animals shows that bone tissue can form a good osseointegration with the implant after implantation for two months, indicating that the glass–ceramics are safe to serve as implants. - Highlights: • The variations of additions account for the differences in internal structure. • The intensity ratio of Si-O-NBO/Si-O (s,sym) of G-NH 4 HF 2 is higher than that of G-CaF 2 . • The bioactivity of G-NH 4 HF 2 is

  10. Source Distribution Method for Unsteady One-Dimensional Flows With Small Mass, Momentum, and Heat Addition and Small Area Variation

    Science.gov (United States)

    Mirels, Harold

    1959-01-01

    A source distribution method is presented for obtaining flow perturbations due to small unsteady area variations, mass, momentum, and heat additions in a basic uniform (or piecewise uniform) one-dimensional flow. First, the perturbations due to an elemental area variation, mass, momentum, and heat addition are found. The general solution is then represented by a spatial and temporal distribution of these elemental (source) solutions. Emphasis is placed on discussing the physical nature of the flow phenomena. The method is illustrated by several examples. These include the determination of perturbations in basic flows consisting of (1) a shock propagating through a nonuniform tube, (2) a constant-velocity piston driving a shock, (3) ideal shock-tube flows, and (4) deflagrations initiated at a closed end. The method is particularly applicable for finding the perturbations due to relatively thin wall boundary layers.

  11. Role of WC additive on reaction, solid-solution and densification in HfB2–SiC ceramics

    DEFF Research Database (Denmark)

    Hu, Dong-Li; Zheng, Qiang; Gu, Hui

    2014-01-01

    A comparative study of phase components and compositions was performed for the pressureless sintered HfB2–SiC–WC composites by various analytical methods. The relative decrease of HfB2 phase leads to a new reaction of HfO2 removal by WC to create B2O3. By using SiC instead of Si3N4 as milling med...

  12. Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources

    Directory of Open Access Journals (Sweden)

    Wanshun Zhao

    2013-04-01

    Full Text Available We report a new method for growing hexagonal columnar nanograin structured silicon carbide (SiC thin films on silicon substrates by using graphene–graphitic carbon nanoflakes (GGNs templates from solid carbon sources. The growth was carried out in a conventional low pressure chemical vapor deposition system (LPCVD. The GGNs are small plates with lateral sizes of around 100 nm and overlap each other, and are made up of nanosized multilayer graphene and graphitic carbon matrix (GCM. Long and straight SiC nanograins with hexagonal shapes, and with lateral sizes of around 200–400 nm are synthesized on the GGNs, which form compact SiC thin films.

  13. Enhancement of biodegradation of crude petroleum-oil in contaminated water by the addition of nitrogen sources.

    Science.gov (United States)

    Mukred, A M; Hamid, A A; Hamzah, A; Yusoff, W M Wan

    2008-09-01

    Addition of nitrogen sources as supplementary nutrient into MSM medium to enhance biodegradation by stimulating the growth four isolates, Acinetobacter faecalis, Staphylococcus sp., Pseudomonas putida and Neisseria elongata isolated from petroleum contaminated groundwater, wastewater aeration pond and biopond at the oil refinery Terengganu Malaysia was investigated. The organic nitrogen sources tested not only supported growth but also enhances biodegradation of 1% Tapis crude oil. All four isolates showed good growth especially when peptone was employed as the organic nitrogen compared to growth in the basal medium. Gas chromatography showed that more then 91, 93, 94 and 95% degradation of total hydrocarbon was observed after 5 days of incubation by isolates Pseudomonas putida, Neisseria elongate, Acinetobacter faecalis and Staphylococcus sp., respectively.

  14. Effect of Fe addition on the magnetic and giant magneto-impedance behaviour of CoCrSiB rapidly solidified alloys

    Energy Technology Data Exchange (ETDEWEB)

    Kumari, Seema; Chattoraj, I; Panda, A K; Mitra, A; Pal, S K [National Metallurgical Laboratory, Jamshedpur 831 007 (India)

    2006-05-21

    Thermal electrical resistivity, magnetic hysteresis and magneto-impedance behaviour of melt spun and annealed Co{sub 71-X}Fe{sub X}Cr{sub 7}Si{sub 8}B{sub 14} (X = 0, 2, 3.2, 4, 6, 8 and 12 at.%) were investigated. The addition of Fe in the system changed crystallization as well as the magnetic properties of the materials. The alloy containing 6 at.% Fe showed an increase in resistivity during the first crystallization process. A TEM micrograph indicated the formation of nanostructure during the crystallization process. The GMI properties of the alloys are evaluated at a driving current amplitude of 5 mA and a frequency of 4 MHz. The two-peak behaviour in the GMI profile was observed for all the samples. It is found that the alloy with 4 at.% Fe has the maximum GMI ratio because of the nearly zero magnetostriction value of the sample. About 62% change in the GMI ratio was observed in the alloy with 4 at.% Fe when annealed at 673 K. The anisotropy field was also minimum for the annealed alloy. The results were explained by the formation of directional ordering and the reduction of the magnetostriction constant of the alloy due to nanocrystallization during the annealing process.

  15. Open-source micro-tensile testers via additive manufacturing for the mechanical characterization of thin films and papers.

    Science.gov (United States)

    Nandy, Krishanu; Collinson, David W; Scheftic, Charlie M; Brinson, L Catherine

    2018-01-01

    The cost of specialized scientific equipment can be high and with limited funding resources, researchers and students are often unable to access or purchase the ideal equipment for their projects. In the fields of materials science and mechanical engineering, fundamental equipment such as tensile testing devices can cost tens to hundreds of thousands of dollars. While a research lab often has access to a large-scale testing machine suitable for conventional samples, loading devices for meso- and micro-scale samples for in-situ testing with the myriad of microscopy tools are often hard to source and cost prohibitive. Open-source software has allowed for great strides in the reduction of costs associated with software development and open-source hardware and additive manufacturing have the potential to similarly reduce the costs of scientific equipment and increase the accessibility of scientific research. To investigate the feasibility of open-source hardware, a micro-tensile tester was designed with a freely accessible computer-aided design package and manufactured with a desktop 3D-printer and off-the-shelf components. To our knowledge this is one of the first demonstrations of a tensile tester with additively manufactured components for scientific research. The capabilities of the tensile tester were demonstrated by investigating the mechanical properties of Graphene Oxide (GO) paper and thin films. A 3D printed tensile tester was successfully used in conjunction with an atomic force microscope to provide one of the first quantitative measurements of GO thin film buckling under compression. The tensile tester was also used in conjunction with an atomic force microscope to observe the change in surface topology of a GO paper in response to increasing tensile strain. No significant change in surface topology was observed in contrast to prior hypotheses from the literature. Based on this result obtained with the new open source tensile stage we propose an

  16. Open-source micro-tensile testers via additive manufacturing for the mechanical characterization of thin films and papers.

    Directory of Open Access Journals (Sweden)

    Krishanu Nandy

    Full Text Available The cost of specialized scientific equipment can be high and with limited funding resources, researchers and students are often unable to access or purchase the ideal equipment for their projects. In the fields of materials science and mechanical engineering, fundamental equipment such as tensile testing devices can cost tens to hundreds of thousands of dollars. While a research lab often has access to a large-scale testing machine suitable for conventional samples, loading devices for meso- and micro-scale samples for in-situ testing with the myriad of microscopy tools are often hard to source and cost prohibitive. Open-source software has allowed for great strides in the reduction of costs associated with software development and open-source hardware and additive manufacturing have the potential to similarly reduce the costs of scientific equipment and increase the accessibility of scientific research. To investigate the feasibility of open-source hardware, a micro-tensile tester was designed with a freely accessible computer-aided design package and manufactured with a desktop 3D-printer and off-the-shelf components. To our knowledge this is one of the first demonstrations of a tensile tester with additively manufactured components for scientific research. The capabilities of the tensile tester were demonstrated by investigating the mechanical properties of Graphene Oxide (GO paper and thin films. A 3D printed tensile tester was successfully used in conjunction with an atomic force microscope to provide one of the first quantitative measurements of GO thin film buckling under compression. The tensile tester was also used in conjunction with an atomic force microscope to observe the change in surface topology of a GO paper in response to increasing tensile strain. No significant change in surface topology was observed in contrast to prior hypotheses from the literature. Based on this result obtained with the new open source tensile stage we

  17. Effect of boron additions and processing on microstructure and mechanical properties of a titanium alloy Ti–6.5Al–3.3Mo–0.3Si

    Energy Technology Data Exchange (ETDEWEB)

    Imayev, V.M., E-mail: vimayev@mail.ru; Gaisin, R.A.; Imayev, R.M.

    2015-08-12

    The effects of boron additions in an amount of 0.1–2 wt%, thermomechanical processing and heat treatment on microstructure and mechanical properties of a two-phase titanium alloy Ti–6.5Al–3.3Mo–0.3Si alloy have been investigated. Depending on the boron amount, the materials under study were divided into two groups: (1) boron modified alloys containing ~0.1 wt% of boron and (2) discontinuously reinforced metal matrix Ti–TiB based composites containing 1.5–2 wt% of boron. Boron additions led to formation of TiB whiskers, which were predominantly located along boundaries of prior β-grains and α-colonies resulting in refined as-cast microstructure. Multiple 3D forging at T=650–700 °C applied for the boron modified alloys resulted in formation of ultrafine-grained microstructure and intensive breaking of TiB whiskers. Tensile properties of the Ti–6.5Al–3.3Mo–0.3Si–0.2 wt% B alloy after multiple 3D forging followed by β-heat treatment were found to be appreciably higher than those of the alloy free of boron after the same processing route that was ascribed to better controlling the β-grain size during β heat treatment. The composite materials were subjected to multiple isothermal 2D forging at T=950 °C that provided effective alignment of TiB whiskers while retaining their high aspect ratio. The hot forged composites demonstrated appreciably higher strength, creep resistance in comparison with those of the base alloy without drastic reduction in ductility. The effect of TiB whiskers orientation and morphology on the tensile properties of the composite materials is discussed.

  18. Single-source-precursor synthesis of dense SiC/HfC(x)N(1-x)-based ultrahigh-temperature ceramic nanocomposites.

    Science.gov (United States)

    Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; Guillon, Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

    2014-11-21

    A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfC(x)N(1-x)-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfC(x)N(1-x)-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfC(x)N(1-x)-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm(-1), the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm(-1).

  19. Improvement of photoluminescence intensity of Ce-doped Y{sub 3}Al{sub 5}O{sub 12} phosphor by Si{sub 3}N{sub 4} addition

    Energy Technology Data Exchange (ETDEWEB)

    Shyu, Jiin-Jyh, E-mail: jjshyu@ttu.edu.tw; Yang, Chia-Wei

    2017-06-01

    Yttrium aluminum garnet (Y{sub 3}Al{sub 5}O{sub 12}, YAG) has been widely used as a host for luminescent ions. The present paper describes the effects of Si{sub 3}N{sub 4} addition on the formation and photoluminescence properties of the Ce-doped YAG yellow phosphors. Phosphor powders with the nominal compositions of Y{sub 2.95}Ce{sub 0.05}Al{sub 5-m}Si{sub m}O{sub 12-m}N{sub m} (m = 0–0.6) were prepared by calcining the mixed raw materials at 1500 °C in nitrogen atmosphere. X-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscope, and transmission electron microscopy equipped with an energy dispersive x-ray spectrometer were used to characterize the structure of the calcined powders. The photoluminescence properties were measured with fluorescence spectrophotometry. It was found that in the range of m = 0–0.27, single phase YAG solid solution (s.s.) in which the Y, Al, and O sites are partially occupied by Ce, Si, and N ions, respectively. The nitrogen ions do not distribute homogeneously over the YAG lattice. The tendency to bond with nitrogen ion for the cations is (Y, Ce) > Si > Al. With the increase in the Si{sub 3}N{sub 4} content, the increase in both the Ce{sup 3+}/(Ce{sup 3+} + Ce{sup 4+}) ratio and the Ce-N bonds improve the intensity of the photoluminescent emission. At m = 0.27, the emission intensity reaches a maximum which is about 2.5 and 1.6 times of that for the Si{sub 3}N{sub 4}-free composition (m = 0) calcined in air and nitrogen, respectively. When the Si{sub 3}N{sub 4} content (m) is higher than 0.27, the emission intensity decreases due to the existence of residual Si{sub 3}N{sub 4} phase. - Highlights: • Addition of Si{sub 3}N{sub 4} can increase the emission intensity of YAG:Ce up to 2.5 times. • Increase in the Ce{sup 3+}/Ce{sup 4+} ratio and the number of Ce-N bonds improve the emission. • The tendency to bond with nitrogen ion for cations in YAG:Ce is (Y, Ce) > Si > Al. • The incomplete dissolution

  20. Fatty acids profile and quality characteristics of broiler chicken meat fed different dietary oil sources with some additives

    Directory of Open Access Journals (Sweden)

    Engy Fayz Zaki

    2018-04-01

    Full Text Available The study was carried out to investigate the effect of feeding broiler chicken on different vegetable oils with feed additives on the quality characteristics of chicken meat. A total of 216 one-day-old chicks of (Hubbard strain were randomly assigned to six dietary treatments as (2×3 factorial designs where two sources of dietary oil with three levels of commercial multi-enzyme feed additives. Treatments were: soybean oil only (T1, soybean oil+ ZAD (T2, soybean oil+ AmPhi-BACT (T3, palm oil only (T4, palm oil + ZAD (T5 and palm oil + AmPhi- BACT (T6.  Results showed that feeding broiler chicken on different types of dietary oils had significant effect on the fatty acid profile of broiler chicken meat. UFA/SFA ration of broiler chicken groups (T4, T5adT6 were significantly lower compared with (T1, T2 and T3 groups. Broiler fed on soybean oil had significantly higher n-6: n-3 ration compared with broiler fed on palm oil. Regardless of the source of dietary oil, significant differences were observed in the most of fatty acid profile in the chicken meat among levels of commercial multi- enzyme feed additives. Meat of T5and T6 had the higher pH value, followed by meat of T1and T3 groups, while the lowest pH value found in meat of T2 and T4. The higher cooking loss was found in meat of T4 while, meat of T5had the lowest value. Data of chilling loss indicated that the differences between dietary treatments were not significantly different except for meat of T6 which had the higher chilling loss. No significant differences were found in color measurements between dietary treatments.

  1. Single-source-precursor synthesis of dense SiC/HfCxN1-x-based ultrahigh-temperature ceramic nanocomposites

    Science.gov (United States)

    Wen, Qingbo; Xu, Yeping; Xu, Binbin; Fasel, Claudia; Guillon, Olivier; Buntkowsky, Gerd; Yu, Zhaoju; Riedel, Ralf; Ionescu, Emanuel

    2014-10-01

    A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfCxN1-x-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300 °C to 1800 °C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfCxN1-x-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfCxN1-x-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm-1, the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm-1.A novel single-source precursor was synthesized by the reaction of an allyl hydrido

  2. Improvement of photoluminescence properties and thermal stability of Y2.9Ce0.1Al5−xSixO12 phosphors with Si3N4 addition

    International Nuclear Information System (INIS)

    Zhang, Fangfang; Song, Kaixin; Jiang, Jun; Wu, Song; Zheng, Peng; Huang, Qingming; Xu, Junming; Qin, Huibin

    2014-01-01

    Highlights: • Y 2.9 Ce 0.1 Al 5−x Si x O 12 phosphors were prepared by solid-state reaction in reduced air ambience. • Si 4+ could be incorporated into the host lattice of Y 3 Al 5 O 12 through partial occupation of the Al 3+ sites. • Si 3 N 4 addition can improve photoluminescence efficiency and thermal stability of Y 3 Al 5 O 12 :Ce. - Abstract: A series of Si 3 N 4 doping Y 2.9 Ce 0.1 Al 5−x Si x O 12−3x/2 N 4x/3 phosphors were prepared by solid-state reaction in 95%N 2 –5%H 2 reduced air ambience. The XRD characteristics plus Rietveld refinement results shows that the as-sintered powders are unique crystal phase with the same crystal structure of Y 3 Al 5 O 12 (PDF No. 79-1891). The N element was not detected by the analysis of X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectrum (EDS). The photoluminescence spectra (PL and PLE) tests show that the exciting and emitting intensity of PLE and PL gradually increase due to the increase of Si 3 N 4 concentration. Meanwhile, the phosphorescence decay times are prolonged from 45 ns (x = 0) to 78 ns (x = 0.3), under the monitor of 530 nm wavelength. The thermoluminescence tests (TL) confirm the thermal stability of as-phosphors with Si 3 N 4 addition is much better than that of the pristine Y 2.9 Ce 0.1 Al 5 O 12 phosphors

  3. Effect of energy source and ruminally degradable protein addition on performance of lactating beef cows and digestion characteristics of steers.

    Science.gov (United States)

    Baumann, T A; Lardy, G P; Caton, J S; Anderson, V L

    2004-09-01

    Two trials were conducted to determine the effect of energy source (ENG) and ruminally degradable protein (RDP) on lactating cow performance and intake and digestion in beef steers. In Trial 1, 78 cow-calf pairs were used in a 2 x 2 factorial design to determine the effect of ENG (corn or soyhulls; SH) and RDP (with our without sunflower meal) to a forage diet for lactating beef cows. The basal diet consisted of 75% grass hay (11.5% CP) and 25% wheat straw (7.4% CP). Supplement treatments and predicted RDP balances were corn (-415 g of RDP/d); SH (-260 g of RDP/d); corn plus RDP (0 g of RDP/d); or SH plus RDP (0 g of RDP/d). Data were analyzed as a split-plot in time, with pen as the experimental unit (two pens per treatment). No interaction between ENG and RDP was present (P > 0.08) for any response variable. No differences (P > 0.39) due to ENG or RDP were noted for BW, BCS, or milk yield; however, final calf weight tended to increase with ENG (P = 0.06). In Trial 2, a 5 x 5 Latin square was used to determine effects of ENG and RDP on intake and digestion in steers (686 +/- 51 kg BW). Treatments were arranged as a 2 x 2 plus one factorial and comprised a control (CON; grass hay, 7% CP), grass hay plus 0.4% BW SH, grass hay plus 0.4% BW SH and 0.15% BW sunflower meal, grass hay plus 0.4% BW corn, and grass hay plus 0.4% BW corn and 0.2% BW sunflower meal. Preplanned contrasts included main effects of ENG and RDP, ENG x RDP interaction, and CON vs. supplemented (SUP) treatments. Supplementation increased total DMI compared with CON (P = 0.001), but forage DMI was greater (P = 0.001) for CON than for SUP. An ENG x RDP interaction occurred for forage DMI (P = 0.02); addition of RDP to corn decreased forage intake, whereas addition of RDP to SH had no effect. There was an ENG x RDP interaction (P = 0.001) for ruminal pH; pH tended to increase with RDP addition to SH (P = 0.07), but decreased with RDP addition to corn (P = 0.001). Supplementation increased ruminal

  4. Oxidation Resistance, Electrical and Thermal Conductivity, and Spectral Emittance of Fully Dense HfB2 and ZrB2 with SiC, TaSi2, and LaB6 Additives

    Science.gov (United States)

    2012-01-26

    of ZrB2-30 mol% SiC Electrically Heated Ribbons over 1-6 µm5 Spectral radiosities of direct electrically-heated ZrB2-30 mol% SiC specimens were mea...where RT (λ) is the spectral radiosity , h is Planck’s constant, k is Boltzmann’s constant, λ is wavelength, c is the speed of light, and T is the...Thus spectral radiosity measurements were performed at an angle normal to the ribbon surface. Specimens were loaded and removed from the chamber via an O

  5. Cs2.5H0.5PWO40/SiO2 as addition self-humidifying composite membrane for proton exchange membrane fuel cells

    International Nuclear Information System (INIS)

    Wang, L.; Yi, B.L.; Zhang, H.M.; Xing, D.M.

    2007-01-01

    In this paper, we first reported a novel self-humidifying composite membrane for the proton exchange membrane fuel cell (PEMFC). Cs 2.5 H 0.5 PWO 40 /SiO 2 catalyst particles were dispersed uniformly into the Nafion (registered) resin, and then Cs 2.5 H 0.5 PWO 40 -SiO 2 /Nafion composite membrane was prepared using solution-cast method. Compared with the H 3 PWO 40 (PTA) , the Cs 2.5 H 0.5 PWO 40 /SiO 2 was steady due to the substitute of H + with Cs + and the interaction between the Cs 2.5 H 0.5 PWO 40 and SiO 2 . And compared with the performance of the fuel cell with commercial Nafion (registered) NRE-212 membrane, the cell performance with the self-humidifying composite membrane was obviously improved under both humidified and dry conditions at 60 and 80 o C. The best performance under dry condition was obtained at 60 o C. The self-humidifying composite membrane could minimize membrane conductivity loss under dry conditions due to the presence of catalyst and hydrophilic Cs 2.5 H 0.5 PWO 40 /SiO 2 particles

  6. Reduction of Methane Emission during Slurry Storage by the Addition of Effective Microorganisms and Excessive Carbon Source from Brewing Sugar.

    Science.gov (United States)

    Bastami, Mohd Saufi B; Jones, Davey L; Chadwick, David R

    2016-11-01

    Storing livestock manure is the primary stage of manure management where microbial processes and chemical reactions result in the release of methane (CH), nitrous oxide (NO), ammonia (NH), and carbon dioxide (CO). This study examined the reduction of CH emissions from slurry storage under two temperatures (cool [10°C] and warm [30°C]) when a glucose-rich substrate (brewing sugar) and activated effective microorganisms were applied at 10% (w/w) and 5% (v/w), respectively. Brewing sugar addition influenced microbial anaerobic respiration, resulting in a reduction of slurry pH to <5.0, through "self-acidification" caused by lactic acid production. Subsequently, CH emissions were significantly reduced by 87 and 99% in the cool and warm environments, respectively. The effective microorganism treatment did not change the chemical characteristics of the slurry but reduced CH emissions by 17 and 27% ( < 0.05) in the cool and warm environments, respectively. These results suggest that self-acidification after addition of a carbon source may be a promising alternative to slurry acidification using concentrated acids. Copyright © by the American Society of Agronomy, Crop Science Society of America, and Soil Science Society of America, Inc.

  7. Single-source-precursor Synthesis and High-temperature Behavior of SiC Ceramics Containing Boron

    Science.gov (United States)

    Gui, Miaomiao; Fang, Yunhui; Yu, Zhaoju

    2014-12-01

    In this paper, a hyperbranched polyborocarbosilane (HPBCS) was prepared by a one-pot synthesis with Cl2Si(CH3)CH2Cl, Cl3SiCH2Cl and BCl3 as the starting materials. The obtained HPBCS was characterized by GPC, FT-IR and NMR, and was confirmed to have hyperbranched structures. The thermal property of the resulting HPBCS was investigated by TGA. The ceramic yield of the HPBCS is about 84% and that of the counterpart hyperbranched hydridopolycarbosilane is only 45%, indicating that the introduction of boron into the preceramic polymer significantly improved the ceramic yield. With the polymer-derived ceramic route, the final ceramics were annealed at 1800 °C in argon atmosphere for 2 h in order to characterize the microstructure and to evaluate the high-temperature behavior. The final ceramic microstructure was studied by XRD and SEM, indicating that the introduction of boron dramatically inhibits SiC crystallization. The boron-containing SiC ceramic shows excellent high-temperature behavior against decomposition and crystallization at 1800 °C.

  8. Thermal stability of (AlSi){sub x}(ZrVTi) intermetallic phases in the Al–Si–Cu–Mg cast alloy with additions of Ti, V, and Zr

    Energy Technology Data Exchange (ETDEWEB)

    Shaha, S.K. [Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria Street, Toronto, Ontario M5B 2K3 (Canada); Czerwinski, F., E-mail: Frank.Czerwinski@nrcan.gc.ca [CanmetMATERIALS, Natural Resources Canada, 183 Longwood Road South, Hamilton, Ontario L8P 0A5 (Canada); Kasprzak, W. [CanmetMATERIALS, Natural Resources Canada, 183 Longwood Road South, Hamilton, Ontario L8P 0A5 (Canada); Friedman, J.; Chen, D.L. [Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria Street, Toronto, Ontario M5B 2K3 (Canada)

    2014-11-10

    Highlights: • Al–Si–Cu–Mg alloy was modified by introducing Zr, V, and Ti. • The chemistry of the phases was identified using SEM/EDX. • The crystal lattice parameters of the phases were characterized using EBSD. • To investigate the phase stability, XRD was performed up to 600 °C. • Thermal analysis was done to find out the possible phase transformation reactions. - Abstract: The Al–Si–Cu–Mg cast alloy was modified with additions of Ti–V–Zr to improve the thermal stability of intermetallics at increased temperatures. A combination of electron microscopy, electron backscatter diffraction, and high temperature X-ray diffraction was explored to identify phases and temperatures of their thermal stability. The micro-additions of transition metals led to formation of several (AlSi){sub x}(TiVZr) phases with D0{sub 22}/D0{sub 23} tetragonal crystal structure and different lattice parameters. While Cu and Mg rich phases along with the eutectic Si dissolved at temperatures from 300 to 500 °C, the (AlSi){sub x}(TiVZr) phases were stable up to 696–705 °C which is the beneficial to enhance the high temperature properties. Findings of this study are useful for selecting temperatures during melting and heat treatment of Al–Si alloys with additions of transition metals.

  9. RF plasma deposition of thin Si{sub x}Ge{sub y}C{sub z}:H films using a combination of organometallic source materials

    Energy Technology Data Exchange (ETDEWEB)

    Rapiejko, C. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Gazicki-Lipman, M. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland)]. E-mail: gazickim@p.lodz.pl; Klimek, L. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Szymanowski, H. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland); Strojek, M. [Institute for Materials Science and Engineering, Technical University of LodzLz Stefanowskiego 1, 90-924 Lodz (Poland)

    2004-12-22

    Elements of the IV group of periodic table have been strongly present in the fast development of PECVD techniques for the last two decades at least. As a result, deposition technologies of such materials as a-Si:H, a-C:H, m{mu}-C:H or DLC have been successfully established. What has followed is an ever growing interest in binary systems of the A{sub x}(IV)B{sub y}(IV):H kind. One possible way to deposit such systems is to use organosilicon compounds (to deposit Si{sub x}C{sub y}:H films) or organogermanium compounds (to deposit Ge{sub x}C{sub y}:H films), as source substances. The present paper reports on a RF plasma deposition of a Si{sub x}Ge{sub y}C{sub z}:H ternary system, using a combination of organosilicon and organogermanium compounds. Thin Si/Ge/C films have been fabricated in a small volume (ca. 2 dm{sup 3}) parallel plate RF plasma reactor using, as a source material, a combination of tetramethylsilane (TMS) and tetramethylgermanium (TMG) vapours carried by argon. SEM investigations reveal a continuous compact character of the coatings and their uniform thickness. The elemental composition of the films has been studied using EDX analysis. The results of the analysis show that the elemental composition of the films can be controlled by both the TMG/TMS ratio of the initial mixture and the RF power input. Ellipsometric measurements show good homogeneity of these materials. Chemical bonding in the films has been studied using the FTIR technique. Bandgap calculations have been carried out using ellipsometric data and by applying both the Tauc law and the Moss approach.

  10. Influence of ZrB2 addition on microstructural development and microhardness of Ti-SiC clad coatings on Ti6Al4V substrate

    CSIR Research Space (South Africa)

    Farotade, GA

    2017-08-01

    Full Text Available The microstructural features and microhardness of ZrB(sub2) reinforced Ti-SiC coatings on Ti-6Al-4V substrate were studied.The deposition of these coatings was achieved via laser cladding technique. A 4.0 KW fiber delivered Nd: YAG laser was used...

  11. Uso da técnica de dilatometria no estudo do efeito de diferentes aditivos na sinterização de Si3N4 Use of dilatometry to study the effect of different additives on the sintering of Si3N4

    Directory of Open Access Journals (Sweden)

    S. Ribeiro

    2000-03-01

    Full Text Available Nos últimos anos vem sendo testados óxidos de terras raras pesadas como aditivos de sinterização, via fase líquida, do nitreto de silício (Si3N4. Este trabalho visou o estudo do comportamento da sinterização do Si3N4 aditivado com um concentrado de óxidos de ítrio e terras raras pesadas e sílica, nas quantidades de 14 e 21%. Os resultados obtidos foram comparados com os apresentados quando do uso de óxido de ítrio e sílica, amplamente conhecidos como aditivos de sinterização de cerâmicas covalentes. Foi comparada também a influência da forma em que os aditivos foram usados, óxidos e dissilicatos. As experiências foram realizadas num dilatômetro e os resultados da sinterização são dados em termos de retração linear e velocidade de retração. Verificou-se que as amostras com maior quantidade de aditivos apresentaram maiores retrações, bem como velocidades de retração superiores. Para as amostras aditivadas com 14 e 21% de Y2O3/SiO2, os resultados foram de 13,1 e 15,5%, respectivamente, e para as aditivadas com concentrado/SiO2, 13,7 e 15,7%, respectivamente. Além disso, maiores retrações e razão de retração foram observadas para amostras com dissilicatos como aditivos, em comparação às amostras com a correspondente mistura de óxidos. Em todos os casos, as amostras aditivadas com o concentrado/SiO2, apresentaram retrações e velocidades de retração superiores às apresentadas pelas aditivadas com Y2O3/SiO2, mostrando ser mais eficiente como aditivo de sinterização do Si3N4.In recent years heavy rare earth oxides have been investigated as sinter additives in the liquid phase sintering of silicon nitride, Si3N4. This work reports on comparative sintering experiments of Si3N4 with yttria/silica and rare earth oxide concentrate/silica additions. The additive contents used were 14 and 21 vol%. The influence of pure oxide additions was compared to that of pre-reacted disilicates. The experiments were

  12. Using additional external inputs to forecast water quality with an artificial neural network for contamination event detection in source water

    Science.gov (United States)

    Schmidt, F.; Liu, S.

    2016-12-01

    Source water quality plays an important role for the safety of drinking water and early detection of its contamination is vital to taking appropriate countermeasures. However, compared to drinking water, it is more difficult to detect contamination events because its environment is less controlled and numerous natural causes contribute to a high variability of the background values. In this project, Artificial Neural Networks (ANNs) and a Contamination Event Detection Process (CED Process) were used to identify events in river water. The ANN models the response of basic water quality sensors obtained in laboratory experiments in an off-line learning stage and continuously forecasts future values of the time line in an on-line forecasting step. During this second stage, the CED Process compares the forecast to the measured value and classifies it as regular background or event value, which modifies the ANN's continuous learning and influences its forecasts. In addition to this basic setup, external information is fed to the CED Process: A so-called Operator Input (OI) is provided to inform about unusual water quality levels that are unrelated to the presence of contamination, for example due to cooling water discharge from a nearby power plant. This study's primary goal is to evaluate how well the OI fits into the design of the combined forecasting ANN and CED Process and to understand its effects on the online forecasting stage. To test this, data from laboratory experiments conducted previously at the School of Environment, Tsinghua University, have been used to perform simulations highlighting features and drawbacks of this method. Applying the OI has been shown to have a positive influence on the ANN's ability to handle a sudden change in background values, which is unrelated to contamination. However, it might also mask the presence of an event, an issue that underlines the necessity to have several instances of the algorithm run in parallel. Other difficulties

  13. Combined addition of nano diamond and nano SiO2, an effective method to improve the in-field critical current density of MgB2 superconductor

    International Nuclear Information System (INIS)

    Rahul, S.; Varghese, Neson; Vinod, K.; Devadas, K.M.; Thomas, Syju; Anees, P.; Chattopadhyay, M.K.; Roy, S.B.; Syamaprasad, U.

    2011-01-01

    Highlights: → Both nano diamond and nano SiO 2 caused significant modifications in the structural properties of pure MgB 2 sample. → Reduction in T C for the best codoped sample was approximately 2 K. → The best codoped sample yielded a J C , an order of magnitude more than the undoped one at 5 K and 8 T. → The enhanced flux pinning capability provided by the additives is responsible for the improved in-field J C . -- Abstract: MgB 2 bulk samples added with nano SiO 2 and/or nano diamond were prepared by powder-in-sealed-tube (PIST) method and the effects of addition on structural and superconducting properties were studied. X-ray diffraction (XRD) analysis revealed that the addition caused systematic reduction in 'a' lattice parameter due to the substitution of C atoms at B sites and the strain caused by reacted intragrain nano particles of Mg 2 Si as evinced by transmission electron microscope image. Scanning electron microscopy images showed distinct microstructural variations with SiO 2 /diamond addition. It was evident from DC magnetization measurements that the in-field critical current density [J C (H)] of doped samples did not fall drastically like the undoped sample. Among the doped samples the J C (H) of co-doped samples were significantly higher and the best co-doped sample yielded a J C , an order of magnitude more than the undoped one at 5 K and 8 T.

  14. Combined addition of nano diamond and nano SiO{sub 2}, an effective method to improve the in-field critical current density of MgB{sub 2} superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Rahul, S.; Varghese, Neson; Vinod, K.; Devadas, K.M.; Thomas, Syju; Anees, P. [National Institute for Interdisciplinary Science and Technology (CSIR), Trivandrum 695019 (India); Chattopadhyay, M.K.; Roy, S.B. [Magnetic and Superconducting Materials Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Syamaprasad, U., E-mail: syamcsir@gmail.com [National Institute for Interdisciplinary Science and Technology (CSIR), Trivandrum 695019 (India)

    2011-11-15

    Highlights: {yields} Both nano diamond and nano SiO{sub 2} caused significant modifications in the structural properties of pure MgB{sub 2} sample. {yields} Reduction in T{sub C} for the best codoped sample was approximately 2 K. {yields} The best codoped sample yielded a J{sub C}, an order of magnitude more than the undoped one at 5 K and 8 T. {yields} The enhanced flux pinning capability provided by the additives is responsible for the improved in-field J{sub C}. -- Abstract: MgB{sub 2} bulk samples added with nano SiO{sub 2} and/or nano diamond were prepared by powder-in-sealed-tube (PIST) method and the effects of addition on structural and superconducting properties were studied. X-ray diffraction (XRD) analysis revealed that the addition caused systematic reduction in 'a' lattice parameter due to the substitution of C atoms at B sites and the strain caused by reacted intragrain nano particles of Mg{sub 2}Si as evinced by transmission electron microscope image. Scanning electron microscopy images showed distinct microstructural variations with SiO{sub 2}/diamond addition. It was evident from DC magnetization measurements that the in-field critical current density [J{sub C}(H)] of doped samples did not fall drastically like the undoped sample. Among the doped samples the J{sub C}(H) of co-doped samples were significantly higher and the best co-doped sample yielded a J{sub C}, an order of magnitude more than the undoped one at 5 K and 8 T.

  15. Zr O/sub 2/ and ZrSiO/sub 4/ addition influence in mechanical resistance and thermical shock of Al/sub 2/TiO/sub 5/

    Energy Technology Data Exchange (ETDEWEB)

    Marinho, P A; Longo, E; Varela, J A; Pandolfelli, V C

    1985-01-01

    The ZrO/sub 2/ and ZrSiO/sub 4/ addition on the Al/sub 2/O/sub 3/TiO/sub 2/ composition showed to be efficient on higher the mechanical and thermal shock resistence of the compound formed. The reactions that formed the phases and the influence of the ones on thermal and mechanical behaviour of the compound Al/sub 2/TiO/sub 5/ were discussed. (L.M.J.).

  16. Comparative differences in the behavior of TiO2 and SiO2 food additives in food ingredient solutions

    Science.gov (United States)

    Yusoff, Ridhwan; Nguyen, Luong T. H.; Chiew, Paul; Wang, Zheng Ming; Ng, Kee Woei

    2018-03-01

    Nanotechnology is widely used in the food industry to improve the color, taste, and texture of food products. However, concerns regarding potential undesirable health effects remain. It is expected that interaction of engineered nanomaterials (ENMs) with food ingredients will influence their behavior and the resulting corona. Nonetheless, there are limited systematic studies conducted to clarify this understanding to date. Herein, we investigated the behavior and corona formation of food grade titanium dioxide (TiO2) and silicon dioxide (SiO2) in solutions of model food ingredients including bovine serum albumin (BSA) and sucrose. Measurements using dynamic light scattering (DLS) showed that both TiO2 and SiO2 nanoparticles displayed a decrease in agglomerate sizes in the presence of both food ingredients. Both particles were negatively charged in all the conditions tested. Corona adsorption studies were carried out using multiple complementary methods including Fourier transform infrared (FTIR) spectroscopy, matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-ToF-MS), transmission electron microscopy (TEM), micro bicinchoninic acid (BCA) protein assay, and thermogravimetric analysis (TGA). Comparative investigation showed that sucrose could disperse both particles more effectively than BSA and that SiO2 displayed greater adsorption capacity for both BSA and sucrose, compared to TiO2. Taken collectively, this study demonstrated the importance of considering food ingredient effects when mapping the behavior of ENMs in food products. Such understanding could be significant in the evaluation of biological effects, such as toxicity, of ENMs used in food products.

  17. Synthesis of ZrB{sub 2}-SiC ceramic composites from a single-source precursor

    Energy Technology Data Exchange (ETDEWEB)

    Arish, Dasan, E-mail: arishd@rediffmail.com [Université of Limoges, SPCTS-CNRS, UMR 7315, Centre Européen de la Céramique (CEC), 12 Rue Atlantis, F-87068, Limoges Cedex (France); Shiju, Chellan [Synthetic Products Division, Corporate R & D Center (CRDC), HLL Lifecare Limited, Thiruvananthapuram, Kerala (India); Joseyphus, Raphael Selwin, E-mail: rsjoseyphus@gmail.com [PG & Research, Department of Chemistry, Mar Ivanios College (Autonomous), Thiruvananthapuram, 695015, Kerala (India); Pushparajan, Joseph [Travancore Titanium Products Ltd., Kochuveli, Thiruvananthapuram, 695021, Kerala (India)

    2017-06-15

    Preceramic polymer zirconoborosiloxane was synthesized from the reaction with boric acid, diphenyldiethoxysilane and zirconium (IV) propoxide via solventless process. The thermogravimetric analysis of the polymer showed that ceramic yield as decomposition product at 900 °C was 71%. The pyrolysis of zirconoborosiloxane in an argon gas environment was investigated as standard pyrolytic process up to 1650 °C. Microstructure evolution of ceramic phases was made by means of Fourier transform infrared, Raman spectroscopy, X-ray diffraction and scanning electron microscope analysis. The results clearly demonstrated the pyrolysis products at 1650 °C consist of totally non-oxide ceramic phases of β-SiC, ZrB{sub 2} and free carbon. - Highlights: • Preceramic polymer zirconoborosiloxane was synthesized by non-aqueous solventless process. • Non-oxide ZrB{sub 2}-SiC composites could be obtained from the pyrolysed products at 1650 °C. • Free carbon content was identified by Raman spectroscopy.

  18. Controlled Carbon Source Addition to an Alternating Nitrification-Denitrification Wastewater Treatment Process Including Biological P Removal

    DEFF Research Database (Denmark)

    Isaacs, Steven Howard; Henze, Mogens

    1995-01-01

    The paper investigates the effect of adding an external carbon source on the rate of denitrification in an alternating activated sludge process including biological P removal. Two carbon sources were examined, acetate and hydrolysate derived from biologically hydrolyzed sludge. Preliminary batch ...

  19. The Effects of Sn Addition on the Microstructure and Surface Properties of Laser Deposited Al-Si-Sn Coatings on ASTM A29 Steel

    Science.gov (United States)

    Fatoba, Olawale S.; Akinlabi, Stephen A.; Akinlabi, Esther T.

    2018-03-01

    Aluminium and its alloys have been successful metal materials used for many applications like commodity roles, automotive and vital structural components in aircrafts. A substantial portion of Al-Fe-Si alloy is also used for manufacturing the packaging foils and sheets for common heat exchanger applications. The present research was aimed at studying the morphology and surface analyses of laser deposited Al-Sn-Si coatings on ASTM A29 steel. These Fe-intermetallic compounds influence the material properties during rapid cooling by laser alloying technique and play a crucial role for the material quality. Thus, it is of considerable technological interest to control the morphology and distribution of these phases in order to eliminate the negative effects on microstructure. A 3 kW continuous wave ytterbium laser system (YLS) attached to a KUKA robot which controls the movement of the alloying process was utilized for the fabrication of the coatings at optimum laser parameters. The fabricated coatings were investigated for its hardness and wear resistance performance. The field emission scanning electron microscope equipped with energy dispersive spectroscopy (SEM/EDS) was used to study the morphology of the fabricated coatings and X-ray diffractometer (XRD) for the identification of the phases present in the coatings. The coatings were free of cracks and pores with homogeneous and refined microstructures. The enhanced hardness and wear resistance performance were attributed to metastable intermetallic compounds formed.

  20. Sintering of SiC ceramics, via liquid phase, with Al{sub 2}O{sub 3}-Yb{sub 2}O{sub 3} additives; Sinterizacao de ceramicas de SiC, via fase liquida, com aditivos de Al{sub 2}O{sub 3}-Yb{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Atilio, I.; Oliveira, M.R.; Garcia, G.C.R.; Ribeiro, S., E-mail: isabelaatilio@hotmail.com [Universidade de Sao Paulo (USP/EEL), Lorena, SP (Brazil). Escola de Engenharia. Dept. de Engenharia de Materiais

    2012-07-01

    The objective of this work was to study the sintering of SiC, through liquid phase, using the additive system Al{sub 2}O{sub 3} and Yb{sub 2}O{sub 3} for the first time. The samples were sintered at temperatures of 1900, 1950 and 2000 deg C for 60 minutes. The melting point of the system was determined according to DIN 51730. It has been found the ability of wetting of SiC in the system. The densification results were: 86,36% at 1900 deg C, 88,25% at 1950 deg C and 82,09% at 2000 deg C. The average linear shrinkage was approximately 17%. There was a conversion of β-SiC in α-SiC at all temperatures and sintering phase formation Yb{sub 3}Al{sub 5}O{sub 12}. The melting temperature was 1850 deg C for de system, consistent with the value in the phase diagram, and the wetting angle of 20 deg. The system (Yb{sub 2}O{sub 3}-Al{sub 2}O{sub 3}) is promising to make liquid phase sintering of SiC, for presenting a good result of wettability. (author)

  1. Ultrahigh B doping (≤1022 cm-3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport

    International Nuclear Information System (INIS)

    Glass, G.; Kim, H.; Desjardins, P.; Taylor, N.; Spila, T.; Lu, Q.; Greene, J. E.

    2000-01-01

    Si(001) layers doped with B concentrations C B between 1x10 17 and 1.2x10 22 cm -3 (24 at %) were grown on Si(001)2x1 at temperatures T s =500-850 degree sign C by gas-source molecular-beam epitaxy from Si 2 H 6 and B 2 H 6 . C B increases linearly with the incident precursor flux ratio J B 2 H 6 /J Si 2 H 6 and B is incorporated into substitutional electrically active sites at concentrations up to C B * (T s ) which, for T s =600 degree sign C, is 2.5x10 20 cm -3 . At higher B concentrations, C B increases faster than J B 2 H 6 /J Si 2 H 6 and there is a large and discontinuous decrease in the activated fraction of incorporated B. However, the total activated B concentration continues to increase and reaches a value of N B =1.3x10 21 cm -3 with C B =1.2x10 22 cm -3 . High-resolution x-ray diffraction (HR-XRD) and reciprocal space mapping measurements show that all films, irrespective of C B and T s , are fully strained. No B precipitates or misfit dislocations were detected by HR-XRD or transmission electron microscopy. The lattice constant in the film growth direction a (perpendicular sign) decreases linearly with increasing C B up to the limit of full electrical activation and continues to decrease, but nonlinearly, with C B >C B * . Room-temperature resistivity and conductivity mobility values are in good agreement with theoretical values for B concentrations up to C B =2.5x10 20 and 2x10 21 cm -3 , respectively. All results can be explained on the basis of a model which accounts for strong B surface segregation to the second-layer with a saturation coverage θ B,sat of 0.5 ML (corresponding to C B =C B * ). At higher C B (i.e., θ B >θ B,sat ), B accumulates in the upper layer as shown by thermally programmed desorption measurements, and a parallel incorporation channel becomes available in which B is incorporated into substitutional sites as B pairs that are electrically inactive but have a low charge-scattering cross section. (c) 2000 The American Physical

  2. The addition of Si to the Ti-35Nb alloy and its effect on the corrosion resistance, when applied to biomedical materials; Efeito da adicao de Si sobre a resistencia a corrosao da liga Ti-35Nb para aplicacoes biomedicas

    Energy Technology Data Exchange (ETDEWEB)

    Tavares, A.M.G.; Souza, S.A.; Batista, W.W.; Macedo, M.C.S.S., E-mail: sasouza.sandra@gmail.com [Universidade Federal de Sergipe (UFS), Sao Cristovao, SE (Brazil). Departamento de Ciencia e Engenharia de Materiais

    2014-07-01

    Alloy elements such as niobium and silicon have been added to titanium as an alternative for new materials to be used in orthopedic implants. However, these new materials' behavior, in face of corrosion is still demanding careful investigations because they will be subjected to an aggressive environ, such as the human body. This study, the corrosion resistance of the Ti-35Nb-(0; 0,15; 0,35; 0,55)Si (% in mass) when in physiological medium was assessed by means of polarization curves, open circuit potential and electrochemical impedance spectroscopy. The compositions of the passive films were analyzed by XPS. Outcomes show that the alloys presented good rapid repassivation capacity after film breaking under high potentials. The high values of resistance to polarization- Rp-pinpoint that the formed oxide films are resistive. They work as a protecting barrier against aggressive ions. Data suggest that the studied alloys are promising for orthopedic implant applications. (author)

  3. Nano-structure formation of Fe-Pt perpendicular magnetic recording media co-deposited with MgO, Al2O3 and SiO2 additives

    International Nuclear Information System (INIS)

    Safran, G.; Suzuki, T.; Ouchi, K.; Barna, P.B.; Radnoczi, G.

    2006-01-01

    Perpendicular magnetic recording media samples were prepared by sputter deposition on sapphire with a layer sequence of MgO seed-layer/Cr under-layer/FeSi soft magnetic under-layer/MgO intermediate layer/FePt-oxide recording layer. The effects of MgO, Al 2 O 3 and SiO 2 additives on the morphology and orientation of the FePt layer were investigated by transmission electron microscopy. The samples exhibited (001) orientation of the L1 FePt phase with the mutual orientations of sapphire substrate//MgO(100)[001]//Cr(100)[11-bar0]//FeSi(100)[11-bar0]//MgO(100) [001]//FePt(001)[100]. The morphology of the FePt films varied due to the co-deposited oxides: The FePt layers were continuous and segmented by stacking faults aligned at 54 o to the surface. Films with SiO 2 addition, beside the oriented columnar FePt grains, exhibited a fraction of misoriented crystallites due to random repeated nucleation. Al 2 O 3 addition resulted in a layered structure, i.e. an initial continuous epitaxial FePt layer covered by a secondary layer of FePt-Al 2 O 3 composite. Both components (FePt and MgO) of the MgO-added samples were grown epitaxially on the MgO intermediate layer, so that a nano-composite of intercalated (001) FePt and (001) MgO was formed. The revealed microstructures and formation mechanisms may facilitate the improvement of the structural and magnetic properties of the FePt-oxide composite perpendicular magnetic recording media

  4. Effects of boron addition on a-Si90Ge10:H films obtained by low frequency plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Perez, Arllene M; Renero, Francisco J; Zuniga, Carlos; Torres, Alfonso; Santiago, Cesar

    2005-01-01

    Optical, structural and electric properties of (a-(Si 90 Ge 10 ) 1-y B y :H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10 -3 to 10 1 Ω -1 cm -1 when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV

  5. The addition of Si to the Ti-35Nb alloy and its effect on the corrosion resistance, when applied to biomedical materials

    International Nuclear Information System (INIS)

    Tavares, A.M.G.; Souza, S.A.; Batista, W.W.; Macedo, M.C.S.S.

    2014-01-01

    Alloy elements such as niobium and silicon have been added to titanium as an alternative for new materials to be used in orthopedic implants. However, these new materials' behavior, in face of corrosion is still demanding careful investigations because they will be subjected to an aggressive environ, such as the human body. This study, the corrosion resistance of the Ti-35Nb-(0; 0,15; 0,35; 0,55)Si (% in mass) when in physiological medium was assessed by means of polarization curves, open circuit potential and electrochemical impedance spectroscopy. The compositions of the passive films were analyzed by XPS. Outcomes show that the alloys presented good rapid repassivation capacity after film breaking under high potentials. The high values of resistance to polarization- Rp-pinpoint that the formed oxide films are resistive. They work as a protecting barrier against aggressive ions. Data suggest that the studied alloys are promising for orthopedic implant applications. (author)

  6. Si3N4 ceramic cutting tool sintered with CeO2 and Al2O3 additives with AlCrN coating

    Directory of Open Access Journals (Sweden)

    José Vitor Candido Souza

    2011-12-01

    Full Text Available Ceramic cutting tools are showing a growing market perspective in terms of application on machining operations due to their high hardness, wear resistance, and machining without a cutting fluid, therefore are good candidates for cast iron and Nickel superalloys machining. The objective of the present paper was the development of Si3N4 based ceramic cutting insert, characterization of its physical and mechanical properties, and subsequent coating with AlCrN using a PVD method. The characterization of the coating was made using an optical profiler, XRD, AFM and microhardness tester. The results showed that the tool presented a fracture toughness of 6.43 MPa.m½ and hardness of 16 GPa. The hardness reached 31 GPa after coating. The machining tests showed a decrease on workpiece roughness when machining with coated insert, in comparison with the uncoated cutting tool. Probably this fact is related to hardness, roughness and topography of AlCrN.

  7. Sintering of Si C by hot-pressing with addition of Al{sub 2}O{sub 3} and concentrate of rare earths; Sinterizacao por prensagem a quente com SiC com adicao de Al{sub 2}O{sub 3} e concentrado de terras raras

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, M.K.; Silva, C.R.M. [Centro Tecnico Aeroespacial (CTA-IAE), Sao Jose dos Campos, SP (Brazil). Inst. de Atividades Espaciais]. E-mail: miriamk@iae.cta.br; Nono, M.C.A.; Vieira, R.A. [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

    2004-07-01

    Silicon carbide (SiC) has essentially covalent bonds ({approx}88%). The high covalency bond is responsible for the good mechanical properties, although it induces a low self diffusion coefficient, making densification more difficult. For a successful densification is necessary to apply pressure on the samples, and/or the addition of sintering additives, which improves the densification. In this SiC samples with alumina (Al2O3) and concentrate of rare earth (CRE) addition were sintered by hot pressing in argon atmospheric at 20 MPa of pressure, heating rate of 20 deg C/min up to 1800 deg C and a dwell time of 1 h. Initially the CRE was calcined at 1000 deg C during 1 h. After that, three mixtures were prepared with distinct concentrations in high energy mill and the samples were sintered. The aim of this work is to improve SiC densification by the liquid phase formation during sintering owing to the additives reactions between itself. The pressure intensify the driving force for densification, taking the liquid phase to drain easier through the grain boundaries, making possible best accommodation and rearrangement of the grains. The application of the pressure on the samples during sintering contributes to improve densification and becomes possible sintering in lower temperature than conventional one. The phases of the sintered samples were analyzed by X-ray diffraction and the morphology were verified by scanning electron microscopy. (author)

  8. 77 FR 12226 - Sadex Corp.; Filing of Food Additive Petition (Animal Use); Electron Beam and X-Ray Sources for...

    Science.gov (United States)

    2012-02-29

    ... DEPARTMENT OF HEALTH AND HUMAN SERVICES Food and Drug Administration 21 CFR Part 579 [Docket No. FDA-2012-F-0178] Sadex Corp.; Filing of Food Additive Petition (Animal Use); Electron Beam and X-Ray... Sadex Corp. has filed a petition proposing that the food additive regulations be amended to provide for...

  9. Characterization of the LiSi/CsBr-LiBr-KBr/FeS(2) System for Potential Use as a Geothermal Borehole Power Source

    International Nuclear Information System (INIS)

    GUIDOTTI, RONALD A.; REINHARDT, FREDERICK W.

    1999-01-01

    We are continuing to study the suitability of modified thermal-battery technology as a potential power source for geothermal borehole applications. Previous work focused on the LiSi/FeS(sub 2) couple over a temperature range of 350 C to 400 C with the LiBr-KBr-LiF eutectic, which melts at 324.5 C. In this work, the discharge processes that take place in LiSi/CsBr-LiBr-KBr eutectic/FeS(sub 2) thermal cells were studied at temperatures between 250 C and 400 C using pelletized cells with immobilized electrolyte. The CsBr-LiBr-KBr eutectic was selected because of its lower melting point (228.5 C). Incorporation of a quasi-reference electrode allowed the determination of the relative contribution of each electrode to the overall cell polarization. The results of single-cell tests and limited battery tests are presented, along with preliminary data for battery stacks tested in a simulated geothermal borehole environment

  10. Determination of europium content in Li_2SiO_3(Eu) by neutron activation analysis using Am-Be neutron source

    International Nuclear Information System (INIS)

    Naik, Yeshwant; Tapase, Anant Shamrao; Mhatre, Amol; Datrik, Chandrashekhar; Tawade, Nilesh; Kumar, Umesh; Naik, Haladhara

    2016-01-01

    Circulardiscs of Li_2SiO_3 doped with europium were prepared and a new activation procedure for the neutron dose estimation in a breeder blanket of fusion reactor is described. The amount of europium in the disc was determined by neutron activation analysis (NAA) using an isotopic neutron source. The average neutron absorption cross section for the reaction was calculated using neutron distribution of the Am-Be source and available neutron absorption cross section data for the "1"5"1Eu(n,γ)"1"5"2"mEu reaction, which was used for estimation of europium in the pallet. The cross section of the elements varies with neutron energy, and the flux of the neutrons in each energy range seen by the nuclei under investigation also varies. Neutron distribution spectrum of the Am-Be source was worked out prior to NAA and the effective fractional flux for the nuclear reaction considered for the flux estimation was also determined. - Highlights: • Lithium meta-silicate is breeder materials for a fusion reactor. • Europium is used for neutron dose estimation in a breeder blanket. • It is important to determine amount of europium in lithium meta-silicate. • Amount of europium in lithium meta-silicate was determined by neutron activation and off-line gamma spectrometry.

  11. J-type Carbon Stars: A Dominant Source of {sup 14}N-rich Presolar SiC Grains of Type AB

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Nan; Nittler, Larry R.; Alexander, Conel M. O’D.; Wang, Jianhua [Department of Terrestrial Magnetism, Carnegie Institution for Science, Washington, DC 20015 (United States); Stephan, Thomas; Boehnke, Patrick; Davis, Andrew M.; Trappitsch, Reto; Pellin, Michael J., E-mail: nliu@carnegiescience.edu [Department of the Geophysical Sciences, The University of Chicago, Chicago, IL 60637 (United States)

    2017-07-20

    We report Mo isotopic data of 27 new presolar SiC grains, including 12 {sup 14}N-rich AB ({sup 14}N/{sup 15}N > 440, AB2) and 15 mainstream (MS) grains, and their correlated Sr and Ba isotope ratios when available. Direct comparison of the data for the MS grains, which came from low-mass asymptotic giant branch (AGB) stars with large s -process isotope enhancements, with the AB2 grain data demonstrates that AB2 grains show near-solar isotopic compositions and lack s -process enhancements. The near-normal Sr, Mo, and Ba isotopic compositions of AB2 grains clearly exclude born-again AGB stars, where the intermediate neutron-capture process ( i -process) takes place, as their stellar source. On the other hand, low-mass CO novae and early R- and J-type carbon stars show {sup 13}C and {sup 14}N excesses but no s -process enhancements and are thus potential stellar sources of AB2 grains. Because both early R-type carbon stars and CO novae are rare objects, the abundant J-type carbon stars (10%–15% of all carbon stars) are thus likely to be a dominant source of AB2 grains.

  12. J-type Carbon Stars: A Dominant Source of 14 N-rich Presolar SiC Grains of Type AB

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Nan; Stephan, Thomas; Boehnke, Patrick; Nittler, Larry R.; Alexander, Conel M. O’D.; Wang, Jianhua; Davis, Andrew M.; Trappitsch, Reto; Pellin, Michael J.

    2017-07-20

    We report Mo isotopic data of 27 new presolar SiC grains, including 12 N-14-rich AB (N-14/N-15 > 440, AB2) and 15 mainstream (MS) grains, and their correlated Sr and Ba isotope ratios when available. Direct comparison of the data for the MS grains, which came from low-mass asymptotic giant branch (AGB) stars with large s-process isotope enhancements, with the AB2 grain data demonstrates that AB2 grains show near-solar isotopic compositions and lack s-process enhancements. The near-normal Sr, Mo, and Ba isotopic compositions of AB2 grains clearly exclude born-again AGB stars, where the intermediate neutron-capture process (i-process) takes place, as their stellar source. On the other hand, low-mass CO novae and early R-and J-type carbon stars show C-13 and N-14 excesses but no s-process enhancements and are thus potential stellar sources of AB2 grains. Because both early R-type carbon stars and CO novae are rare objects, the abundant J-type carbon stars (10%-15% of all carbon stars) are thus likely to be a dominant source of AB2 grains.

  13. Effects of boron addition on a-Si(90)Ge(10):H films obtained by low frequency plasma enhanced chemical vapour deposition.

    Science.gov (United States)

    Pérez, Arllene M; Renero, Francisco J; Zúñiga, Carlos; Torres, Alfonso; Santiago, César

    2005-06-29

    Optical, structural and electric properties of (a-(Si(90)Ge(10))(1-y)B(y):H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10(-3) to 10(1) Ω(-1) cm(-1) when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

  14. Improvement of photoluminescence properties and thermal stability of Y{sub 2.9}Ce{sub 0.1}Al{sub 5−x}Si{sub x}O{sub 12} phosphors with Si{sub 3}N{sub 4} addition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fangfang [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Song, Kaixin, E-mail: kxsong@hdu.edu.cn [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Jiang, Jun [Ningbo Institute of Materials Technologies and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wu, Song; Zheng, Peng [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Huang, Qingming [Instrument Analysis and Testing Center, Fuzhou University, Fuzhou 350002 (China); Xu, Junming; Qin, Huibin [College of Electronic Information and Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China)

    2014-12-05

    Highlights: • Y{sub 2.9}Ce{sub 0.1}Al{sub 5−x}Si{sub x}O{sub 12} phosphors were prepared by solid-state reaction in reduced air ambience. • Si{sup 4+} could be incorporated into the host lattice of Y{sub 3}Al{sub 5}O{sub 12} through partial occupation of the Al{sup 3+} sites. • Si{sub 3}N{sub 4} addition can improve photoluminescence efficiency and thermal stability of Y{sub 3}Al{sub 5}O{sub 12}:Ce. - Abstract: A series of Si{sub 3}N{sub 4} doping Y{sub 2.9}Ce{sub 0.1}Al{sub 5−x}Si{sub x}O{sub 12−3x/2}N{sub 4x/3} phosphors were prepared by solid-state reaction in 95%N{sub 2}–5%H{sub 2} reduced air ambience. The XRD characteristics plus Rietveld refinement results shows that the as-sintered powders are unique crystal phase with the same crystal structure of Y{sub 3}Al{sub 5}O{sub 12} (PDF No. 79-1891). The N element was not detected by the analysis of X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray spectrum (EDS). The photoluminescence spectra (PL and PLE) tests show that the exciting and emitting intensity of PLE and PL gradually increase due to the increase of Si{sub 3}N{sub 4} concentration. Meanwhile, the phosphorescence decay times are prolonged from 45 ns (x = 0) to 78 ns (x = 0.3), under the monitor of 530 nm wavelength. The thermoluminescence tests (TL) confirm the thermal stability of as-phosphors with Si{sub 3}N{sub 4} addition is much better than that of the pristine Y{sub 2.9}Ce{sub 0.1}Al{sub 5}O{sub 12} phosphors.

  15. Using open source computational tools for predicting human metabolic stability and additional absorption, distribution, metabolism, excretion, and toxicity properties.

    Science.gov (United States)

    Gupta, Rishi R; Gifford, Eric M; Liston, Ted; Waller, Chris L; Hohman, Moses; Bunin, Barry A; Ekins, Sean

    2010-11-01

    Ligand-based computational models could be more readily shared between researchers and organizations if they were generated with open source molecular descriptors [e.g., chemistry development kit (CDK)] and modeling algorithms, because this would negate the requirement for proprietary commercial software. We initially evaluated open source descriptors and model building algorithms using a training set of approximately 50,000 molecules and a test set of approximately 25,000 molecules with human liver microsomal metabolic stability data. A C5.0 decision tree model demonstrated that CDK descriptors together with a set of Smiles Arbitrary Target Specification (SMARTS) keys had good statistics [κ = 0.43, sensitivity = 0.57, specificity = 0.91, and positive predicted value (PPV) = 0.64], equivalent to those of models built with commercial Molecular Operating Environment 2D (MOE2D) and the same set of SMARTS keys (κ = 0.43, sensitivity = 0.58, specificity = 0.91, and PPV = 0.63). Extending the dataset to ∼193,000 molecules and generating a continuous model using Cubist with a combination of CDK and SMARTS keys or MOE2D and SMARTS keys confirmed this observation. When the continuous predictions and actual values were binned to get a categorical score we observed a similar κ statistic (0.42). The same combination of descriptor set and modeling method was applied to passive permeability and P-glycoprotein efflux data with similar model testing statistics. In summary, open source tools demonstrated predictive results comparable to those of commercial software with attendant cost savings. We discuss the advantages and disadvantages of open source descriptors and the opportunity for their use as a tool for organizations to share data precompetitively, avoiding repetition and assisting drug discovery.

  16. Influence of fluoride additions on biological and mechanical properties of Na2O-CaO-SiO2-P2O5 glass-ceramics.

    Science.gov (United States)

    Li, H C; Wang, D G; Hu, J H; Chen, C Z

    2014-02-01

    Two series of Na2O-CaO-SiO2-P2O5 glass-ceramics doped with NH4HF2 (G-NH4HF2) or CaF2 (G-CaF2) have been prepared by sol-gel method. The glass-ceramic phase composition and morphology were characterized by X-ray diffraction (XRD) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM-EDS). The mechanical properties and thermal expansion coefficient were measured by a microhardness tester, an electronic tensile machine and a thermal expansion coefficient tester. The structure difference between these two glass-ceramics was investigated by Fourier transform infrared spectroscopy (FTIR), and the in vitro bioactivity of the glass-ceramics was determined by in vitro simulated body fluid (SBF) immersion test. The hemolysis test, in vitro cytotoxicity test, systemic toxicity test and the implanted experiment in animals were used to evaluate the biocompatibility of the glass-ceramics. The mechanical properties of sample G-NH4HF2 are lower than that of sample G-CaF2, and the bioactivity of sample G-NH4HF2 is better than that of sample G-CaF2. The thermal expansion coefficients of these two glass-ceramics are all closer to that of Ti6Al4V. After 7 days of SBF immersion, apatites were induced on glass-ceramic surface, indicating that the glass-ceramics have bioactivity. The hemolysis test, in vitro cytotoxicity test and systemic toxicity test demonstrate that the glass-ceramics do not cause hemolysis reaction, and have no toxicity to cell and living animal. The implanted experiment in animals shows that bone tissue can form a good osseointegration with the implant after implantation for two months, indicating that the glass-ceramics are safe to serve as implants. Copyright © 2013 Elsevier B.V. All rights reserved.

  17. Formation of hydroxyapatite onto glasses of the CaO-MgO-SiO2 system with B2O3, Na2O, CaF2 and P2O5 additives.

    Science.gov (United States)

    Agathopoulos, S; Tulyaganov, D U; Ventura, J M G; Kannan, S; Karakassides, M A; Ferreira, J M F

    2006-03-01

    New bioactive glasses with compositions based on the CaO-MgO-SiO(2) system and additives of B(2)O(3), P(2)O(5), Na(2)O, and CaF(2) were prepared. The in vitro mineralization behaviour was tested by immersion of powders or bulk glasses in simulated body fluid (SBF). Monitoring of ionic concentrations in SBF and scanning electron microscopy (SEM) observations at the surface of the glasses were conducted over immersion time. Raman and infrared (IR) spectroscopy shed light on the structural evolution occurring at the surface of the glasses that leads to formation of hydroxyapatite.

  18. Effect of the addition of nitrogen sources to cassava fiber and carbon-to-nitrogen ratios on Agaricus brasiliensis growth.

    Science.gov (United States)

    Mantovani, T R D; Linde, G A; Colauto, N B

    2007-01-01

    The same substratum formulation to grow Agaricus bisporus has been used to grow Agaricus brasiliensis since its culture started in Brazil. Despite being different species, many of the same rules have been used for composting or axenic cultivation when it comes to nitrogen content and source in the substrate. The aim of this study was to verify the mycelial growth of A. brasiliensis in different ammonium sulfate and (or) urea concentrations added to cassava fiber and different carbon-to-nitrogen (C:N) ratios to increase the efficiency of axenic cultivation. Two nitrogen sources (urea and (or) ammonium sulfate) added to cassava fiber were tested for the in vitro mycelial growth in different C:N ratios (ranging from 2.5:l to 50:l) in the dark at 28 degrees C. The radial mycelial growth was measured after 8 days of growth and recorded photographically at the end of the experiment. Nitrogen from urea enhanced fungal growth better than ammonium sulfate or any mixture of nitrogen. The best C:N ratios for fungal growth were from 10:l to 50:l; C:N ratios below 10:l inhibited fungal growth.

  19. The effects of small metal additions (Co, Cu, Ga, Mn, Al, Bi, Sn) on the magnetocaloric properties of the Gd5Ge2Si2 alloy

    Czech Academy of Sciences Publication Activity Database

    Shull, R. D.; Provenzano, V.; Shapiro, A. J.; Fu, A.; Lufaso, M. W.; Karapetrova, J.; Kletetschka, Günther; Mikula, V.

    2006-01-01

    Roč. 99, č. 8 (2006), s. 8-8 ISSN 0021-8979 Institutional research plan: CEZ:AV0Z30130516 Keywords : magnetocaloric * (Co, Cu, Ga, Mn, Al, Bi, Sn) additions * Cryogenic properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.316, year: 2006

  20. Sources

    International Nuclear Information System (INIS)

    Duffy, L.P.

    1991-01-01

    This paper discusses the sources of radiation in the narrow perspective of radioactivity and the even narrow perspective of those sources that concern environmental management and restoration activities at DOE facilities, as well as a few related sources. Sources of irritation, Sources of inflammatory jingoism, and Sources of information. First, the sources of irritation fall into three categories: No reliable scientific ombudsman to speak without bias and prejudice for the public good, Technical jargon with unclear definitions exists within the radioactive nomenclature, and Scientific community keeps a low-profile with regard to public information. The next area of personal concern are the sources of inflammation. This include such things as: Plutonium being described as the most dangerous substance known to man, The amount of plutonium required to make a bomb, Talk of transuranic waste containing plutonium and its health affects, TMI-2 and Chernobyl being described as Siamese twins, Inadequate information on low-level disposal sites and current regulatory requirements under 10 CFR 61, Enhanced engineered waste disposal not being presented to the public accurately. Numerous sources of disinformation regarding low level radiation high-level radiation, Elusive nature of the scientific community, The Federal and State Health Agencies resources to address comparative risk, and Regulatory agencies speaking out without the support of the scientific community

  1. Recent Additions in the Modeling Capabilities of an Open-Source Wave Energy Converter Design Tool: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Tom, N.; Lawson, M.; Yu, Y. H.

    2015-04-20

    WEC-Sim is a midfidelity numerical tool for modeling wave energy conversion devices. The code uses the MATLAB SimMechanics package to solve multibody dynamics and models wave interactions using hydrodynamic coefficients derived from frequency-domain boundary-element methods. This paper presents the new modeling features introduced in the latest release of WEC-Sim. The first feature discussed conversion of the fluid memory kernel to a state-space form. This enhancement offers a substantial computational benefit after the hydrodynamic body-to-body coefficients are introduced and the number of interactions increases exponentially with each additional body. Additional features include the ability to calculate the wave-excitation forces based on the instantaneous incident wave angle, allowing the device to weathervane, as well as import a user-defined wave elevation time series. A review of the hydrodynamic theory for each feature is provided and the successful implementation is verified using test cases.

  2. Flatbed scanners as a source of imaging. Brightness assessment and additives determination in a nickel electroplating bath.

    Science.gov (United States)

    Vidal, M; Amigo, J M; Bro, R; Ostra, M; Ubide, C; Zuriarrain, J

    2011-05-23

    Desktop flatbed scanners are very well-known devices that can provide digitized information of flat surfaces. They are practically present in most laboratories as a part of the computer support. Several quality levels can be found in the market, but all of them can be considered as tools with a high performance and low cost. The present paper shows how the information obtained with a scanner, from a flat surface, can be used with fine results for exploratory and quantitative purposes through image analysis. It provides cheap analytical measurements for assessment of quality parameters of coated metallic surfaces and monitoring of electrochemical coating bath lives. The samples used were steel sheets nickel-plated in an electrodeposition bath. The quality of the final deposit depends on the bath conditions and, especially, on the concentration of the additives in the bath. Some additives become degraded with the bath life and so is the quality of the plate finish. Analysis of the scanner images can be used to follow the evolution of the metal deposit and the concentration of additives in the bath. Principal component analysis (PCA) is applied to find significant differences in the coating of sheets, to find directions of maximum variability and to identify odd samples. The results found are favorably compared with those obtained by means of specular reflectance (SR), which is here used as a reference technique. Also the concentration of additives SPB and SA-1 along a nickel bath life can be followed using image data handled with algorithms such as partial least squares (PLS) regression and support vector regression (SVR). The quantitative results obtained with these and other algorithms are compared. All this opens new qualitative and quantitative possibilities to flatbed scanners. Copyright © 2011 Elsevier B.V. All rights reserved.

  3. Synthesis and mechanical characterization of PZT/Sr based composite ceramics with addition of Si{sub 3}N{sub 4}; Sintese e caracterizacao mecanica de ceramicas compositas a base de PZT/Sr com adicoes de Si{sub 3}N{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Santos, M.A.P.; Santos, R.C.P.; Santos, M.C.C.; Rocha, C.D.G.; Silva, M., E-mail: cida@ipqm.mar.mil.b [Instituto de Pesquisas da Marinha (IPqM), Ilha do Governador, RJ (Brazil). Grupo de Materiais

    2010-07-01

    In the Underwater Acoustics field, piezoelectric ceramics are the most usually employed materials for the conversion of mechanical energy (acoustic signal) into electric energy (electric signal) and vice-versa, in sensors (hydrophones) or hydroacoustic projectors. In the development of new compositions for these applications, piezoelectric performance is generally prioritized, to the expense of its mechanical properties. With this in mind, the object of this work was to study the effects of the addition of Si{sub 3}N{sub 4} in the mechanical properties of PZT-Sr based electronic ceramics. Thus, a novel piezoelectric ceramic with the addition of small percentages in weight (0;0.1;1;3 and 5) of the structural ceramic Si{sub 3}N{sub 4} was successfully processed by the oxide mixing route ; the compounds were sintered in a conventional at 1200 deg C for 2h. The densities of the compounds thus obtained for the different percentages of Si{sub 3}N{sub 4} ranged from 55 to 97% and decreased with the increase of the content of Si{sub 3}N{sub 4}. Presence of equiaxial grains with normal growth was observed in all samples. MEV/EDS analysis of the micro-structures of the compositions detected the presence of a second phase rich in Zr, confirmed by DRX, which is a result of large quantities of volatilized PbO; the sintered pieces had their mechanical properties investigated by ultra-sonic inspection. It was observed that, among the sintered compositions, the PZT-Sr ceramic with 0.1% Si{sub 3}N{sub 4} presented the smallest value for Young's Modulus E and Shear Modulus G, 75 Gpa and 28 Gpa, respectively. The Poisson's Coefficients {nu} tended to decrease with the increase of Si{sub 3}N{sub 4} added to the PZT-Sr ceramic, indicating, thus, that the added compound may be used to adjust the mechanical properties of the material. (author)

  4. Short-term nitrogen additions can shift a coastal wetland from a sink to a source of N2O

    Science.gov (United States)

    Moseman-Valtierra, Serena; Gonzalez, Rosalinda; Kroeger, Kevin D.; Tang, Jianwu; Chao, Wei Chun; Crusius, John; Bratton, John F.; Green, Adrian; Shelton, James

    2011-01-01

    Coastal salt marshes sequester carbon at high rates relative to other ecosystems and emit relatively little methane particularly compared to freshwater wetlands. However, fluxes of all major greenhouse gases (N2O, CH4, and CO2) need to be quantified for accurate assessment of the climatic roles of these ecosystems. Anthropogenic nitrogen inputs (via run-off, atmospheric deposition, and wastewater) impact coastal marshes. To test the hypothesis that a pulse of nitrogen loading may increase greenhouse gas emissions from salt marsh sediments, we compared N2O, CH4 and respiratory CO2fluxes from nitrate-enriched plots in a Spartina patens marsh (receiving single additions of NaNO3 equivalent to 1.4 g N m−2) to those from control plots (receiving only artificial seawater solutions) in three short-term experiments (July 2009, April 2010, and June 2010). In July 2009, we also compared N2O and CH4 fluxes in both opaque and transparent chambers to test the influence of light on gas flux measurements. Background fluxes of N2O in July 2009 averaged −33 μmol N2O m−2 day−1. However, within 1 h of nutrient additions, N2O fluxes were significantly greater in plots receiving nitrate additions relative to controls in July 2009. Respiratory rates and CH4 fluxes were not significantly affected. N2O fluxes were significantly higher in dark than in transparent chambers, averaging 108 and 42 μmol N2O m−2 day−1 respectively. After 2 days, when nutrient concentrations returned to background levels, none of the greenhouse gas fluxes differed from controls. In April 2010, N2O and CH4 fluxes were not significantly affected by nitrate, possibly due to higher nitrogen demands by growing S. patens plants, but in June 2010 trends of higher N2O fluxes were again found among nitrate-enriched plots, indicating that responses to nutrient pulses may be strongest during the summer. In terms of carbon equivalents, the highest average N2O and CH4 fluxes observed, exceeded half

  5. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  6. Li{sub 4}SiO{sub 4} based breeder ceramics with Li{sub 2}TiO{sub 3}, LiAlO{sub 2} and Li{sub X}La{sub Y}TiO{sub 3} additions, part I: Fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Kolb, M.H.H., E-mail: Matthias.kolb@kit.edu [Karlsruhe Institute of Technology, Institute for Applied Materials, PO Box 3640, 76021 Karlsruhe (Germany); Mukai, K.; Knitter, R. [Karlsruhe Institute of Technology, Institute for Applied Materials, PO Box 3640, 76021 Karlsruhe (Germany); Hoshino, T. [Breeding Functional Materials Development Group, Department of Blanket Systems Research, Rokkasho Fusion Institute, Fusion Energy Research and Development Directorate, National Institutes for Quantum and Radiological Science and Technology (QST) (Japan)

    2017-02-15

    Highlights: • This study shows that the emulsion method can easily be adapted to add different phases into Li4SiO4 breeder pebbles. • Slurries with various compositions to form LOS + LMT, LOS + LAO and LOS + LLTO were processed.The calculated activation behavior shows that samples with added LAO or LLTO qualify as low activation material. • Yet, the long-term activation of the LAO containing samples is problematic as hands-on level activity is not reached quickly. - Abstract: Wet-chemical fabrication processes are highly adaptable to a wide range of raw materials and are therefore well suited for evaluating new material compositions. Here the established emulsion method was modified to fabricate novel two-phase Li{sub 4}SiO{sub 4} pebbles of 1 mm diameter with additions of Li{sub 2}TiO{sub 3}, LiAlO{sub 2} or Li{sub x}La{sub y}TiO{sub 3}. As the lithium density of the latter two compounds is relatively low, only moderate contents were added. The Li{sub 2}TiO{sub 3} additions, however, cover the full compositional range. The fabrication process was characterized with regard to its constancy and aptness for the anticipated pebble compositions by optical pebble size measurements. Also the phase content and the elemental composition of the fabricated pebbles were analyzed by XRD and ICP-OES combined with XRF, respectively. This work shows that the emulsion method is an appropriate method to produce pebbles with the anticipated Li{sub 2}TiO{sub 3} and LiAlO{sub 2} concentrations in a Li{sub 4}SiO{sub 4} matrix. However, Li{sub 4}SiO{sub 4} and Li{sub x}La{sub y}TiO{sub 3} react with each other to a number of different phases. To evaluate the activation properties of the pebbles, FISPACT calculations with a DEMO relevant neutron source are applied as well. The addition of aluminum seems to be unfavorable for a fusion application, but moderate concentrations of lanthanum can be tolerated.

  7. VLBA imaging of the 3 mm SiO maser emission in the disk-wind from the massive protostellar system Orion Source I

    Science.gov (United States)

    Issaoun, S.; Goddi, C.; Matthews, L. D.; Greenhill, L. J.; Gray, M. D.; Humphreys, E. M. L.; Chandler, C. J.; Krumholz, M.; Falcke, H.

    2017-10-01

    Context. High-mass star formation remains poorly understood due to observational difficulties (e.g. high dust extinction and large distances) hindering the resolution of disk-accretion and outflow-launching regions. Aims: Orion Source I is the closest known massive young stellar object (YSO) and exceptionally powers vibrationally-excited SiO masers at radii within 100 AU, providing a unique probe of gas dynamics and energetics. We seek to observe and image these masers with Very Long Baseline Interferometry (VLBI). Methods: We present the first images of the 28SiO v = 1, J = 2-1 maser emission around Orion Source I observed at 86 GHz (λ3 mm) with the Very Long Baseline Array (VLBA). These images have high spatial ( 0.3 mas) and spectral ( 0.054 km s-1) resolutions. Results: We find that the λ3 mm masers lie in an X-shaped locus consisting of four arms, with blue-shifted emission in the south and east arms and red-shifted emission in the north and west arms. Comparisons with previous images of the 28SiO v = 1,2, J = 1-0 transitions at λ7 mm (observed in 2001-2002) show that the bulk of the J = 2-1 transition emission follows the streamlines of the J = 1-0 emission and exhibits an overall velocity gradient consistent with the gradient at λ7 mm. While there is spatial overlap between the λ3 mm and λ7 mm transitions, the λ3 mm emission, on average, lies at larger projected distances from Source I ( 44 AU compared with 35 AU for λ7 mm). The spatial overlap between the v = 1, J = 1-0 and J = 2-1 transitions is suggestive of a range of temperatures and densities where physical conditions are favorable for both transitions of a same vibrational state. However, the observed spatial offset between the bulk of emission at λ3 mm and λ7 mm possibly indicates different ranges of temperatures and densities for optimal excitation of the masers. We discuss different maser pumping models that may explain the observed offset. Conclusions: We interpret the λ3 mm and λ7 mm

  8. sources

    Directory of Open Access Journals (Sweden)

    Shu-Yin Chiang

    2002-01-01

    Full Text Available In this paper, we study the simplified models of the ATM (Asynchronous Transfer Mode multiplexer network with Bernoulli random traffic sources. Based on the model, the performance measures are analyzed by the different output service schemes.

  9. Abrasive wear resistance and microstructure of Ni-Cr-B-Si hardfacing alloys with additions of Al, Nb, Mo, Fe, Mn and C

    International Nuclear Information System (INIS)

    Berns, H.; Fischer, A.; Theisen, W.

    1987-01-01

    The development of new Ni-base hardfacing alloys for filler wire welding or metal spraying should result in materials with a good resistance against high temperature corrosion and abrasive wear. The first step is to design microstructures, which obtain a satisfactory abrasive wear behaviour at room temperature. Thus, different alloys are melted and scrutinized as to their microstructure and their abrasive wear resistance in laboratory. Compared to commercial Ni-base hardfacing alloys they show a higher volume fraction of coarse hard phases due to the additional, initial solidification of Nb-carbides and Cr-, and Mo-borides. Thus, the abrasive wear resistance is improved. For hard abrasive particles, such as corundum, the Ni-base alloys are more wear resistant than harder Fe-base alloys investigate earlier. This is due to the tougher Ni metal matrix that results in microcracking not to be the most significantly acting wear mechanism

  10. Influence of Addition of Fluid Catalytic Cracking Residue (FCC and the SiO2 Concentration in Alkali-Activated Ceramic Sanitary-Ware (CSW Binders

    Directory of Open Access Journals (Sweden)

    Juan Cosa

    2018-03-01

    Full Text Available Production of Portland cement requires a large volume of natural raw materials and releases huge amounts of CO2 to the atmosphere. Lower environmental impact alternatives focus on alkali-activated cements. In this paper, fluid catalytic cracking residue (FCC was used to partially replace (0 wt %–50 wt % ceramic sanitaryware (CSW in alkali-activated systems. Samples were activated with NaOH and sodium silicate solutions and were cured at 65 °C for 7 days and at 20 °C for 28 and 90 days. In order to increase CSW/FCC binders’ sustainability, the influence of reducing the silica concentration (from 7.28 mol·kg−1 up to 2.91 mol·kg−1 was analyzed. The microstructure of the developed binders was investigated in pastes by X-ray diffraction, thermo tests and field emission scanning electron microscopy analyses. Compressive strength evolution was assessed in mortars. The results showed a synergetic effect of the CSW/FCC combinations so that, under the studied conditions, mechanical properties significantly improved when combining both waste materials (up to 70 MPa were achieved in the mortars containing 50 wt % FCC cured at room temperature for 90 days. Addition of FCC allowed CSW to be activated at room temperature, which significantly broadens the field of applications of alkali-activated CSW binders.

  11. effects of sulphur addition on addition on and mechanical properties

    African Journals Online (AJOL)

    User

    on the microstructure and mechanical properties of sand cast been investigated ... owed that the addition of sulphur to Al-12wt%Si alloy. 12wt%Si alloy .... 28 materials. 29. Element. Aluminum. Silicon. Al. Si. Ca. Fe. Cu. Zn. Mn. Mg. Cr. B. 99.71.

  12. Effects of atomic hydrogen on the selective area growth of Si and Si1-xGex thin films on Si and SiO2 surfaces: Inhibition, nucleation, and growth

    International Nuclear Information System (INIS)

    Schroeder, T.W.; Lam, A.M.; Ma, P.F.; Engstrom, J.R.

    2004-01-01

    Supersonic molecular beam techniques have been used to study the nucleation of Si and Si 1-x Ge x thin films on Si and SiO 2 surfaces, where Si 2 H 6 and GeH 4 have been used as sources. A particular emphasis of this study has been an examination of the effects of a coincident flux of atomic hydrogen. The time associated with formation of stable islands of Si or Si 1-x Ge x on SiO 2 surfaces--the incubation time--has been found to depend strongly on the kinetic energy of the incident molecular precursors (Si 2 H 6 and GeH 4 ) and the substrate temperature. After coalescence, thin film morphology has been found to depend primarily on substrate temperature, with smoother films being grown at substrate temperatures below 600 deg. C. Introduction of a coincident flux of atomic hydrogen has a large effect on the nucleation and growth process. First, the incubation time in the presence of atomic hydrogen has been found to increase, especially at substrate temperatures below 630 deg. C, suggesting that hydrogen atoms adsorbed on Si-like sites on SiO 2 can effectively block nucleation of Si. Unfortunately, in terms of promoting selective area growth, coincident atomic hydrogen also decreases the rate of epitaxial growth rate, essentially offsetting any increase in the incubation time for growth on SiO 2 . Concerning Si 1-x Ge x growth, the introduction of GeH 4 produces substantial changes in both thin film morphology and the rate nucleation of poly-Si 1-x Ge x on SiO 2 . Briefly, the addition of Ge increases the incubation time, while it lessens the effect of coincident hydrogen on the incubation time. Finally, a comparison of the maximum island density, the time to reach this density, and the steady-state polycrystalline growth rate strongly suggests that all thin films [Si, Si 1-x Ge x , both with and without H(g)] nucleate at special sites on the SiO 2 surface, and grow primarily via direct deposition of adatoms on pre-existing islands

  13. The effect of fluoroethylene carbonate additive content on the formation of the solid-electrolyte interphase and capacity fade of Li-ion full-cell employing nano Si-graphene composite anodes

    Science.gov (United States)

    Bordes, Arnaud; Eom, KwangSup; Fuller, Thomas F.

    2014-07-01

    When fluoroethylene carbonate (FEC) is added to the ethylene carbonate (EC)-diethyl carbonate (DEC) electrolyte, the capacity and cyclability of full-cells employing Si-graphene anode and lithium nickel cobalt aluminum oxide cathode (NCA) cathode are improved due to formation of a thin (30-50 nm) SEI layer with low ionic resistance (∼2 ohm cm2) on the surface of Si-graphene anode. These properties are confirmed with electrochemical impedance spectroscopy and a cross-sectional image analysis using Focused Ion Beam (FIB)-SEM. Approximately 5 wt.% FEC in EC:DEC (1:1 wt.%) shows the highest capacity and most stability. This high capacity and low capacity fade is attributed to a more stable SEI layer containing less CH2OCO2Li, Li2CO3 and LiF compounds, which consume cyclable Li. Additionally, a greater amount of polycarbonate (PC), which is known to form a more robust passivation layer, thus reducing further reduction of electrolyte, is confirmed with X-ray photoelectron spectroscopy (XPS).

  14. Influence of relation CaO/SiO{sub 2} mixtures of anhydrous cement and mineral additives on the formation of CSH and combat the retrogression; Influencia da relacao CaO/SiO{sub 2} de misturas anidras de cimento e aditivos minerais na formacao do C-S-H e no combate a retrogressao

    Energy Technology Data Exchange (ETDEWEB)

    Anjos, Marcos A.S. [Instituto Federal de Educacao, Ciencia e Tecnologia do Rio Grande do Norte (IFRN), Natal, RN (Brazil); Martinelli, Antonio E.; Melo, Dulce M.A.; Souza, Pablo P.D. [Universidade Federal do Rio Grande do Norte (UFRN), Natal, RN (Brazil); Renovato, Tiago

    2012-07-01

    Temperatures above de 110 deg C cause cracks in the cement placed on the annular, and lost of hydraulic insulation; this crack is occasioned by the phenomenon of retrogression of the compressive resistance due to the conversion of the hydrated calcium silicate in phases calcium-rich, caused by the high temperatures in the wells. This paper presents the results of an experimental study aimed to investigate the influence of the molar ratio of different mixtures CaO/SiO{sub 2} Portland cement (CP) and minerals additives in the formation of CSH and retrogression of cement slurries subjected to high temperature and pressure. For both cement slurries were formulated with the addition of sugarcane biomass waste, silica flour and metakaolin in different concentrations of additives. The results of compressive strength and XRD showed that the use of cement slurries with molar ratio CaO/SiO{sub 2} near one can minimize the effect of retrogression when pulps are subjected to temperatures of 280 deg C and 17.2 MPa. (author)

  15. Subtracted dynamic MR perfusion source images (sMRP-SI) provide collateral blood flow assessment in MCA occlusions and predict tissue fate

    International Nuclear Information System (INIS)

    Villringer, Kersten; Serrano-Sandoval, Rafael; Galinovic, Ivana; Ostwaldt, Ann-Christin; Brunecker, Peter; Fiebach, Jochen B.; Grittner, Ulrike; Schneider, Alice; Rocco, Andrea

    2016-01-01

    Collateral blood flow is accepted as a predictive factor of tissue fate in ischemic stroke. Thus, we aimed to evaluate a new method derived from MR perfusion source images to assess collateral flow in patients with ICA/MCA occlusions. A total of 132 patients of the prospective 1000+ study were examined. MR perfusion source images were assessed according to Δimg n = img n + 1 - img n - 1 using the five-grade Higashida collateral flow rating system. Higashida scores were correlated to mismatch (MM) volume, mismatch ratio, day 6 FLAIR lesion volumes and day 90 mRS. Patients with Higashida scores 3 and 4 had significantly lower admission NIHSS, smaller FLAIR day 6 lesion volumes (p < 0.001) and higher rates of better long-term outcome (mRS 0-2, p = 0.002). There was a linear trend for the association of Higashida grade 1 (p = 0.002) and 2 (p = 0.001) with unfavourable outcome (day 90 mRS 3-6), but no significant association was found for MM volume, MM ratio and day 90 mRS. Inter-rater agreement was 0.58 (95 % CI 0.43-0.73) on day 1, 0.70 (95 % CI 0.58-0.81) on day 2. sMRP-SI Higashida score offers a non-invasive collateral vessel and tissue perfusion assessment of ischemic tissue. The predictive value of Higashida rating proved superior to MM with regard to day 90 mRS. (orig.)

  16. Subtracted dynamic MR perfusion source images (sMRP-SI) provide collateral blood flow assessment in MCA occlusions and predict tissue fate

    Energy Technology Data Exchange (ETDEWEB)

    Villringer, Kersten; Serrano-Sandoval, Rafael; Galinovic, Ivana; Ostwaldt, Ann-Christin; Brunecker, Peter; Fiebach, Jochen B. [Charite-Universitaetsmedizin, Academic Neuroradiology, Center for Stroke Research (CSB), Berlin (Germany); Grittner, Ulrike [Charite, Universitaetsmedizin Berlin, Center for Stroke Research, Berlin (Germany); Charite, Department for Biostatistics and Clinical Epidemiology, Berlin (Germany); Schneider, Alice [Charite, Universitaetsmedizin Berlin, Center for Stroke Research, Berlin (Germany); Rocco, Andrea [Charite, Department of Neurology and Center for Stroke Research, Berlin (Germany)

    2016-05-15

    Collateral blood flow is accepted as a predictive factor of tissue fate in ischemic stroke. Thus, we aimed to evaluate a new method derived from MR perfusion source images to assess collateral flow in patients with ICA/MCA occlusions. A total of 132 patients of the prospective 1000+ study were examined. MR perfusion source images were assessed according to Δimg{sub n} = img{sub n} + 1 - img{sub n} - 1 using the five-grade Higashida collateral flow rating system. Higashida scores were correlated to mismatch (MM) volume, mismatch ratio, day 6 FLAIR lesion volumes and day 90 mRS. Patients with Higashida scores 3 and 4 had significantly lower admission NIHSS, smaller FLAIR day 6 lesion volumes (p < 0.001) and higher rates of better long-term outcome (mRS 0-2, p = 0.002). There was a linear trend for the association of Higashida grade 1 (p = 0.002) and 2 (p = 0.001) with unfavourable outcome (day 90 mRS 3-6), but no significant association was found for MM volume, MM ratio and day 90 mRS. Inter-rater agreement was 0.58 (95 % CI 0.43-0.73) on day 1, 0.70 (95 % CI 0.58-0.81) on day 2. sMRP-SI Higashida score offers a non-invasive collateral vessel and tissue perfusion assessment of ischemic tissue. The predictive value of Higashida rating proved superior to MM with regard to day 90 mRS. (orig.)

  17. Influence of Al addition on the thermal stability and mechanical properties of Fe76.5-xCu1Si13.5b9Alx amorphous alloys

    Directory of Open Access Journals (Sweden)

    Sun Y.Y.

    2012-01-01

    Full Text Available This paper fabricated Fe76.5-xCu1Si13.5B9Alx (x=0,1,2,3,5,7 at.% amorphous ribbons using singleroller melt-spinning method. The effect of Al content on the thermal stability and mechanical properties was investigated. The results indicated that Al addition have little effect on the amorphous formation ability of the alloys. On the other hand, increasing the Al content can substantially increase Tx2, which corresponds to the crystallization of Fe borides. Nanoindentation tests indicated that hardness of the alloys increase slightly with increasing the Al content, and Young’s modulus has a complicated relationship with the Al content.

  18. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  19. Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

    Energy Technology Data Exchange (ETDEWEB)

    Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wrocaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Drzik, Milan [International Laser Center, Ilkovicova 3, 841-04 Bratislava 4 (Slovakia)

    2015-07-15

    GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grown with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.

  20. Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

    International Nuclear Information System (INIS)

    Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

    2008-01-01

    Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

  1. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  2. Influence of Y2O3 Addition on Crystallization, Thermal, Mechanical, and Electrical Properties of BaO-Al2O3-B2O3-SiO2 Glass-Ceramic for Ceramic Ball Grid Array Package

    Science.gov (United States)

    Li, Bo; Li, Wei; Zheng, Jingguo

    2018-01-01

    Y2O3 addition has a significant influence on the crystallization, thermal, mechanical, and electrical properties of BaO -Al2O3 -B2O3 -SiO2 (BABS) glass-ceramics. Semi-quantitative calculation based on x-ray diffraction demonstrated that with increasing Y2O3 content, both the crystallinity and the phase content of cristobalite gradually decreased. It is effective for the additive Y2O3 to inhibit the formation of cristobalite phase with a large coefficient of thermal expansion value. The flexural strength and the Young's modulus, thus, are remarkably increased from 140 MPa to 200 MPa and 56.5 GPa to 63.7 GPa, respectively. Also, the sintering kinetics of BABS glass-ceramics with various Y2O3 were investigated using the isothermal sintering shrinkage curve at different sintering temperatures. The sintering activation energy Q sharply decreased from 99.8 kJ/mol to 81.5 kJ/mol when 0.2% Y2O3 was added, which indicated that a small amount of Y2O3 could effectively promote the sintering procedure of BABS glass-ceramics.

  3. Synthesis and applications of crack-free SiO2 monolith containing CdSe/ZnS quantum dots as passive lighting sources.

    Science.gov (United States)

    Yi, Dong Kee

    2008-09-01

    A reverse microemulsion technique has been used to synthesize quantum dot nanocomposites within a SiO2 surface coating. With this approach, the unique optical properties of the CdSe/ZnS quantum dots were preserved. CdSe/ZnS/SiO2 nanoparticles were homogeneously distributed in a tetramethyl orthosilicate ethanol solution and gelation process was initiated within a 10 min, and was left over night at room temperature and dried fully to achieve a solid SiO, monolith. The resulting monolith was transparent and fluorescent under ultraviolet (UV) lamp. Moreover the monolith produced was crack-free. Further studies on the photo stability of the monolith were performed using a high power UV LED device. Remarkably, quantum dots in the SiO, monolith showed better photo stability compared with those dispersed in a polymer matrix.

  4. Ionized Gas Kinematics around an Ultra-luminous X-Ray Source in NGC 5252: Additional Evidence for an Off-nuclear AGN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Minjin [Korea Astronomy and Space Science Institute, Daejeon 305-348 (Korea, Republic of); Ho, Luis C. [Kavli Institute for Astronomy and Astrophysics, Peking University, Beijing 100871 (China); Im, Myungshin [Center for the Exploration of the Origin of the Universe (CEOU), Astronomy Program, Department of Physics and Astronomy, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul, 151-742 (Korea, Republic of)

    2017-08-01

    The Seyfert 2 galaxy NGC 5252 contains a recently identified ultra-luminous X-ray (ULX) source that has been suggested to be a possible candidate off-nuclear low-mass active galactic nucleus. We present follow-up optical integral-field unit observations obtained using Gemini Multi-Object Spectrographs on the Gemini-North telescope. In addition to confirming that the ionized gas in the vicinity of the ULX is kinematically associated with NGC 5252, the new observations reveal ordered motions consistent with rotation around the ULX. The close coincidence of the excitation source of the line-emitting gas with the position of the ULX further suggests that ULX itself is directly responsible for the ionization of the gas. The spatially resolved measurements of [N ii] λ 6584/H α surrounding the ULX indicate a low gas-phase metallicity, consistent with those of other known low-mass active galaxies but not that of its more massive host galaxy. These findings strengthen the proposition that the ULX is not a background source but rather that it is the nucleus of a small, low-mass galaxy accreted by NGC 5252.

  5. Additive effects of CuSO4 and aromatic compounds on laccase production by Pleurotus sajor-caju PS-2001 using sucrose as a carbon source

    Directory of Open Access Journals (Sweden)

    F. Bettin

    2014-06-01

    Full Text Available Laccase enzymes are now commercially available, and a laccase/mediator combination is currently marketed for indigo dye bleaching in textile manufacturing; replacing traditional chemical-based processes with enzymatic technology reduces the need for effluent treatment. However, an inexpensive source of these enzymes will be needed to enable wider application of this technology. In the present work, the main objective was to increase laccase production by the mushroom Pleurotus sajor-caju strain PS-2001 grown on sucrose derived from sugar cane, one of most economical carbon sources known, by the addition of compounds that are known to affect laccase production. High laccase activities (45-62 U mL-1 were obtained with additions of syringaldazine, benzoic acid, gallic acid, and vanillin. When CuSO4 was used in conjunction with these aromatic compounds, the levels of laccase activity were further improved, reaching 58-80 U mL-1. These laccase activities indicate the potential of this strain as an enzyme producer, which has also been detected in media containing glucose, but with activity lower than that observed with sucrose.

  6. Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

    International Nuclear Information System (INIS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2015-01-01

    We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

  7. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    International Nuclear Information System (INIS)

    Wu Yuying; Liu Xiangfa; Jiang Binggang; Huang Chuanzhen

    2009-01-01

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  8. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yuying [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China)], E-mail: wyy532001@163.com; Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Shandong Binzhou Bohai Piston Co., Ltd., Binzhou 256602, Shandong (China); Jiang Binggang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Huang Chuanzhen [School of Mechanical Engineering, Shandong University, Jinan 250061 (China)

    2009-05-27

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  9. SI Notes.

    Science.gov (United States)

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  10. Matrix densification of SiC composites by sintering process

    International Nuclear Information System (INIS)

    Kim, Young-Wook; Jang, Doo-Hee; Eom, Jung-Hye; Chun, Yong-Seong

    2007-02-01

    The objectives of this research are to develop a process for dense SiC fiber-SiC composites with a porosity of 5% or less and to develop high-strength SiC fiber-SiC composites with a strength of 500 MPa or higher. To meet the above objectives, the following research topics were investigated ; new process development for the densification of SiC fiber-SiC composites, effect of processing parameters on densification of SiC fiber-SiC composites, effect of additive composition on matrix microstructure, effects of additive composition and content on densification of SiC fiber-SiC composites, mechanical properties of SiC fiber-SiC composites, effect of fiber coating on densification and strength of SiC fiber-SiC composites, development of new additive composition. There has been a great deal of progress in the development of technologies for the processing and densification of SiC fiber-SiC composites and in better understanding of additive-densification-mechanical property relations as results of this project. Based on the progress, dense SiC fiber-SiC composites (≥97%) and high strength SiC fiber-SiC composites (≥600 MPa) have been developed. Development of 2D SiC fiber-SiC composites with a relative density of ≥97% and a strength of ≥600 MPa can be counted as a notable achievement

  11. Increasing fermentation efficiency at high sugar concentrations by supplementing an additional source of nitrogen during the exponential phase of the tequila fermentation process.

    Science.gov (United States)

    Arrizon, Javier; Gschaedler, Anne

    2002-11-01

    In the tequila industry, fermentation is traditionally achieved at sugar concentrations ranging from 50 to 100 g x L(-1). In this work, the behaviour of the Saccharomyces cerevisiae yeast (isolated from the juices of the Agave tequilana Weber blue variety) during the agave juice fermentation is compared at different sugar concentrations to determine if it is feasible for the industry to run fermentation at higher sugar concentrations. Fermentation efficiency is shown to be higher (above 90%) at a high concentration of initial sugar (170 g x L(-1)) when an additional source of nitrogen (a mixture of amino acids and ammonium sulphate, different than a grape must nitrogen composition) is added during the exponential growth phase.

  12. The nuclear reaction analysis (NRA) as a means for detecting carbon in GaAs and in source materials and additives

    International Nuclear Information System (INIS)

    Bethge, K.; Mader, A.; Michelmann, R.; Krauskopf, J.; Thee, P.; Meyer, J.D.

    1991-01-01

    The nuclear reaction ananlysis (NRA) on the basis of the reaction 12 C (d,p) 13 C is a method allowing the detection and description of both lateral and depth profiles of the presence of carbon in GaAs and in the source materials and additives. The NRA is an absolute method with a detection limit for C of approx. 4x10 15 cm 3 . The achievable detection range in depth under the experimental conditions goes from the surface down to 6 μm. Combined with channeling measurements, NRA is capable of identifying the position of carbon in the GaAs crystal lattice, and thus permits to examine the mobility of C in GaAs. (BBR) With 11 refs [de

  13. Thermal shock properties of 2D-SiCf/SiC composites

    International Nuclear Information System (INIS)

    Lee, Sang Pill; Lee, Jin Kyung; Son, In Soo; Bae, Dong Su; Kohyama, Akira

    2012-01-01

    This paper dealt with the thermal shock properties of SiC f /SiC composites reinforced with two dimensional SiC fabrics. SiC f /SiC composites were fabricated by a liquid phase sintering process, using a commercial nano-size SiC powder and oxide additive materials. An Al 2 O 3 –Y 2 O 3 –SiO 2 powder mixture was used as a sintering additive for the consolidation of SiC matrix region. In this composite system, Tyranno SA SiC fabrics were also utilized as a reinforcing material. The thermal shock test for SiC f /SiC composites was carried out at the elevated temperature. Both mechanical strength and microstructure of SiC f /SiC composites were investigated by means of optical microscopy, SEM and three point bending test. SiC f /SiC composites represented a dense morphology with a porosity of about 8.2% and a flexural strength of about 160 MPs. The characterization of SiC f /SiC composites was greatly affected by the history of cyclic thermal shock. Especially, SiC f /SiC composites represented a reduction of flexural strength at the thermal shock temperature difference higher than 800 °C.

  14. Addition of Sb as a surfactant for the growth of nonpolar a-plane GaN by using mixed-source hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Ok, Jin Eun; Jo, Dong Wan; Yun, Wy Il; Han, Young Hun; Jeon, Hun Soo; Lee, Gang Suok; Jung, Se Gyo; Bae, Seon Min; Ahn, Hyung Soo; Yang, Min

    2011-01-01

    The influence of Sb as a surfactant on the morphology and on the structural and the optical characteristics of a-plane GaN grown on r-plane sapphire by using mixed-source hydride vapor phase epitaxy was investigated. The a-plane GaN:Sb layers were grown at various temperatures ranging from 1000 .deg. C to 1100 .deg. C, and the reactor pressure was maintained at 1 atm. The atomic force microscope (AFM), scanning electron microscope (SEM), X-ray diffraction (XRD) and photoluminescence(PL) results indicated that the surface morphologies and the structural and the optical characteristics of a-plane GaN were markedly improved, compared to the a-plane GaN layers grown without Sb, by using Sb as a surfactant. The addition of Sb was found to alter epitaxial lateral overgrowth (ELO) facet formation. The Sb was not detected from the a-plane-GaN epilayers within the detection limit of the energy dispersive spectroscopy (EDS) and x-ray photoelectron spectroscopy (XPS) measurements, suggesting that Sb act as a surfactant during the growth of a-plane GaN by using mixed-source HVPE method.

  15. SI units in engineering and technology

    CERN Document Server

    Qasim, S H

    2016-01-01

    SI Units in Engineering and Technology focuses on the use of the International System of Units-Systeme International d'Unités (SI). The publication first elaborates on the SI, derivation of important engineering units, and derived SI units in science and engineering. Discussions focus on applied mechanics in mechanical engineering, electrical and magnetic units, stress and pressure, work and energy, power and force, and magnitude of SI units. The text then examines SI units conversion tables and engineering data in SI units. Tables include details on the sectional properties of metals in SI units, physical properties of important molded plastics, important physical constants expressed in SI units, and temperature, area, volume, and mass conversion. Tables that show the mathematical constants, standard values expressed in SI units, and Tex count conversion are also presented. The publication is a dependable source of data for researchers interested in the use of the International System of Units-Systeme Inter...

  16. Astrometrically registered simultaneous observations of the 22 GHz H{sub 2}O and 43 GHz SiO masers toward R Leonis Minoris using KVN and source/frequency phase referencing

    Energy Technology Data Exchange (ETDEWEB)

    Dodson, Richard; Rioja, María J.; Jung, Tae-Hyun; Sohn, Bong-Won; Byun, Do-Young; Cho, Se-Hyung; Lee, Sang-Sung; Kim, Jongsoo; Kim, Kee-Tae; Oh, Chung-Sik; Han, Seog-Tae; Je, Do-Heung; Chung, Moon-Hee; Wi, Seog-Oh; Kang, Jiman; Lee, Jung-Won; Chung, Hyunsoo; Kim, Hyo-Ryoung; Kim, Hyun-Goo; Lee, Chang-Hoon, E-mail: rdodson@kasi.re.kr [Korea Astronomy and Space Science Institute, Daedeokdae-ro 776, Yuseong-gu, Daejeon 305-348 (Korea, Republic of); and others

    2014-11-01

    Oxygen-rich asymptotic giant branch (AGB) stars can be intense emitters of SiO (v = 1 and 2, J = 1 → 0) and H{sub 2}O maser lines at 43 and 22 GHz, respectively. Very long baseline interferometry (VLBI) observations of the maser emission provide a unique tool to probe the innermost layers of the circumstellar envelopes in AGB stars. Nevertheless, the difficulties in achieving astrometrically aligned H{sub 2}O and v = 1 and v = 2 SiO maser maps have traditionally limited the physical constraints that can be placed on the SiO maser pumping mechanism. We present phase-referenced simultaneous spectral-line VLBI images for the SiO v = 1 and v = 2, J = 1 → 0, and H{sub 2}O maser emission around the AGB star R LMi, obtained from the Korean VLBI Network (KVN). The simultaneous multi-channel receivers of the KVN offer great possibilities for astrometry in the frequency domain. With this facility, we have produced images with bona fide absolute astrometric registration between high-frequency maser transitions of different species to provide the positions of the H{sub 2}O maser emission and the center of the SiO maser emission, hence reducing the uncertainty in the proper motions for R LMi by an order of magnitude over that from Hipparcos. This is the first successful demonstration of source frequency phase referencing for millimeter VLBI spectral-line observations and also where the ratio between the frequencies is not an integer.

  17. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

  18. SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

    Science.gov (United States)

    Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

    2017-05-01

    A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

  19. High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries

    Directory of Open Access Journals (Sweden)

    Keiichiro Homma

    2014-04-01

    Full Text Available Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD at a material throughput of 480 g h−1. The powders are fundamentally an aggregate of primary ~20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g−1 after 100 cycles at the same time.

  20. High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries.

    Science.gov (United States)

    Homma, Keiichiro; Kambara, Makoto; Yoshida, Toyonobu

    2014-04-01

    Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD) at a material throughput of 480 g h -1 . The powders are fundamentally an aggregate of primary ∼20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH 4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g -1 after 100 cycles at the same time.

  1. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  2. Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

    Institute of Scientific and Technical Information of China (English)

    蔡艳芝; 殷小玮; 尹洪峰

    2015-01-01

    The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

  3. Dielectric properties of PMMA-SiO2 hybrid films

    KAUST Repository

    Morales-Acosta, M. D.; Quevedo-Ló pez, Manuel Angel Quevedo; Alshareef, Husam N.; Gnade, Bruce E.; Ramí rez-Bon, Rafael

    2010-01-01

    Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

  4. Dielectric properties of PMMA-SiO2 hybrid films

    KAUST Repository

    Morales-Acosta, M. D.

    2010-03-01

    Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

  5. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-01

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  6. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-25

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  7. SI: The Stellar Imager

    Science.gov (United States)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2006-01-01

    The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

  8. Estimating PM2.5 Concentrations in Xi'an City Using a Generalized Additive Model with Multi-Source Monitoring Data.

    Directory of Open Access Journals (Sweden)

    Yong-Ze Song

    Full Text Available Particulate matter with an aerodynamic diameter <2.5 μm (PM2.5 represents a severe environmental problem and is of negative impact on human health. Xi'an City, with a population of 6.5 million, is among the highest concentrations of PM2.5 in China. In 2013, in total, there were 191 days in Xi'an City on which PM2.5 concentrations were greater than 100 μg/m3. Recently, a few studies have explored the potential causes of high PM2.5 concentration using remote sensing data such as the MODIS aerosol optical thickness (AOT product. Linear regression is a commonly used method to find statistical relationships among PM2.5 concentrations and other pollutants, including CO, NO2, SO2, and O3, which can be indicative of emission sources. The relationships of these variables, however, are usually complicated and non-linear. Therefore, a generalized additive model (GAM is used to estimate the statistical relationships between potential variables and PM2.5 concentrations. This model contains linear functions of SO2 and CO, univariate smoothing non-linear functions of NO2, O3, AOT and temperature, and bivariate smoothing non-linear functions of location and wind variables. The model can explain 69.50% of PM2.5 concentrations, with R2 = 0.691, which improves the result of a stepwise linear regression (R2 = 0.582 by 18.73%. The two most significant variables, CO concentration and AOT, represent 20.65% and 19.54% of the deviance, respectively, while the three other gas-phase concentrations, SO2, NO2, and O3 account for 10.88% of the total deviance. These results show that in Xi'an City, the traffic and other industrial emissions are the primary source of PM2.5. Temperature, location, and wind variables also non-linearly related with PM2.5.

  9. On-site SiH4 generator using hydrogen plasma generated in slit-type narrow gap

    Science.gov (United States)

    Takei, Norihisa; Shinoda, Fumiya; Kakiuchi, Hiroaki; Yasutake, Kiyoshi; Ohmi, Hiromasa

    2018-06-01

    We have been developing an on-site silane (SiH4) generator based on use of the chemical etching reaction between solid silicon (Si) and the high-density H atoms that are generated in high-pressure H2 plasma. In this study, we have developed a slit-type plasma source for high-efficiency SiH4 generation. High-density H2 plasma was generated in a narrow slit-type discharge gap using a 2.45 GHz microwave power supply. The plasma’s optical emission intensity distribution along the slit was measured and the resulting distribution was reflected by both the electric power distribution and the hydrogen gas flow. Because the Si etching rate strongly affects the SiH4 generation rate, the Si etching behavior was investigated with respect to variations in the experimental parameters. The weight etch rate increased monotonically with increasing input microwave power. However, the weight etch rate decreased with increasing H2 pressure and an increasing plasma gap. This reduction in the etch rate appears to be related to shrinkage of the plasma generation area because increased input power is required to maintain a constant plasma area with increasing H2 pressure and the increasing plasma gap. Additionally, the weight etch rate also increases with increasing H2 flow rate. The SiH4 generation rate of the slit-type plasma source was also evaluated using gas-phase Fourier transform infrared absorption spectroscopy and the material utilization efficiencies of both Si and the H2 gas for SiH4 gas formation were discussed. The main etch product was determined to be SiH4 and the developed plasma source achieved a SiH4 generation rate of 10 sccm (standard cubic centimeters per minute) at an input power of 900 W. In addition, the Si utilization efficiency exceeded 60%.

  10. The role of groundwater discharge fluxes on Si:P ratios in a major tributary to Lake Erie.

    Science.gov (United States)

    Maavara, Taylor; Slowinski, Stephanie; Rezanezhad, Fereidoun; Van Meter, Kimberly; Van Cappellen, Philippe

    2018-05-01

    Groundwater discharge can be a major source of nutrients to river systems. Although quantification of groundwater nitrate loading to streams is common, the dependence of surface water silicon (Si) and phosphorus (P) concentrations on groundwater sources has rarely been determined. Additionally, the ability of groundwater discharge to drive surface water Si:P ratios has not been contextualized relative to riverine inputs or in-stream transformations. In this study, we quantify the seasonal dynamics of Si and P cycles in the Grand River (GR) watershed, the largest Canadian watershed draining into Lake Erie, to test our hypothesis that regions of Si-rich groundwater discharge increase surface water Si:P ratios. Historically, both the GR and Lake Erie have been considered stoichiometrically P-limited, where the molar Si:P ratio is greater than the ~16:1 phytoplankton uptake ratio. However, recent trends suggest that eastern Lake Erie may be approaching Si-limitation. We sampled groundwater and surface water for dissolved and reactive particulate Si as well as total dissolved P for 12months within and downstream of a 50-km reach of high groundwater discharge. Our results indicate that groundwater Si:P ratios are lower than the corresponding surface water and that groundwater is a significant source of bioavailable P to surface water. Despite these observations, the watershed remains P-limited for the majority of the year, with localized periods of Si-limitation. We further find that groundwater Si:P ratios are a relatively minor driver of surface water Si:P, but that the magnitude of Si and P loads from groundwater represent a large proportion of the overall fluxes to Lake Erie. Copyright © 2017 Elsevier B.V. All rights reserved.

  11. A conceptual study on the formulation of a permeable reactive pavement with activated carbon additives for controlling the fate of non-point source environmental organic contaminants.

    Science.gov (United States)

    Huang, Shengyi; Liang, Chenju

    2018-02-01

    To take advantage of the road pavement network where non-point source (NPS) pollution such as benzene, toluene, ethyl-benzene, and xylene (BTEX) from vehicle traffic exhaust via wet and dry atmospheric deposition occurs, the asphalt pavement may be used as a media to control the NPS pollution. An experiment to prepare an adsorptive porous reactive pavement (PRP) was initiated to explore the potential to reduce environmental NPS vehicle pollution. The PRP was prepared and studied as follows: various activated carbons (AC) were initially screened to determine if they were suitable as an additive in the porous asphalt mixture; various mixtures of a selected AC were incorporated with the design of porous asphalt concrete (PAC) to produce PRP, and the PRP formulations were tested to ensure that they comply with the required specifications; qualified specimens were subsequently tested to determine their adsorption capacity for BTEX in aqueous solution, as compared to conventional PAC. The PRP08 and PRP16 samples, named for the design formulations of 0.8% and 1.6% of AC (by wt. in the formulation), exhibited low asphalt drain-down and low abrasion loss and also met all regulated specifications. The BTEX adsorption capacity measurements of PRP08 and PRP16 were 33-46%, 36-51%, 20-22%, and 6-8% respectively, higher than those obtained from PACs. Based on the test results, PRPs showed good physical performance and adsorption and may be considered as a potential method for controlling the transport of NPS vehicle pollutants. Copyright © 2017 Elsevier Ltd. All rights reserved.

  12. Growth rate and surface morphology of 4H-SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions

    Science.gov (United States)

    Mitani, Takeshi; Komatsu, Naoyoshi; Takahashi, Tetsuo; Kato, Tomohisa; Fujii, Kuniharu; Ujihara, Toru; Matsumoto, Yuji; Kurashige, Kazuhisa; Okumura, Hajime

    2014-09-01

    The growth rate and surface morphology of 4H-SiC crystals prepared by solution growth with Si1-xCrx and Si1-x-yCrxAly (x=0.4, 0.5 and 0.6; y=0.04) solvents were investigated under various temperature conditions. The growth rate was examined as functions of the temperature difference between the growth surface and C source, the amount of supersaturated C and supersaturation at the growth surface. We found that generation of trench-like surface defects in 4H-SiC crystals was suppressed using Si1-x-yCrxAly solvents even under highly supersaturated conditions where the growth rate exceeded 760 μm/h. Conversely, trench-like defects were observed in crystals grown with Si1-xCrx solvents under all experimental conditions. Statistical observation of the macrostep structure showed that the macrostep height in crystals grown with Si1-x-yCrxAly solvents was maintained at lower levels than that obtained using Si1-xCrx solvents. Addition of Al prevents the macrosteps from developing into large steps, which are responsible for the generation of trench-like surface defects.

  13. Hydrogen activated axial inter-conversion in SiC nanowires

    International Nuclear Information System (INIS)

    Ruemmeli, Mark H.; Adebimpe, David B.; Borowiak-Palen, Ewa; Gemming, Thomas; Ayala, Paola; Ioannides, Nicholas; Pichler, Thomas; Huczko, Andrzej; Cudzilo, Stanislaw; Knupfer, Martin; Buechner, Bernd

    2009-01-01

    A facile low pressure annealing route using NH 3 as a hydrogen source for the structural and chemical modification of SiC nanowires (SiCNWs) is presented. The developed route transforms SiCNWs into tubular SiC nanostructures while coaxial SiO 2 /SiCNWs reverse their sheath/core structure. Our findings suggest a decomposition process induced via the preferential substitution of silicon by hydrogen and via the difference in diffusion rates of available atomic species, which leads to axial structural rearrangement. In addition to these effects, the procedure improves the crystallinity of the samples. The process could be exploited as a viable route to manipulate a variety of nanostructures and films for doping and etching and structural manipulation. - Graphical abstract: SiC and SiO 2 /SiCNWs are shown to be structurally modified through a hydrogen activated replacement route which can even lead to the axial inter-conversion of species. The process could be exploited as a viable route to manipulate a variety of nanostructures and films for doping and etching and structural manipulation

  14. Si light-emitting device in integrated photonic CMOS ICs

    Science.gov (United States)

    Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

    2017-07-01

    The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

  15. Effect of ZrO(2) additions on the crystallization, mechanical and biological properties of MgO-CaO-SiO(2)-P(2)O(5)-CaF(2) bioactive glass-ceramics.

    Science.gov (United States)

    Li, H C; Wang, D G; Meng, X G; Chen, C Z

    2014-06-01

    A series of ZrO(2) doped MgO-CaO-SiO(2)-P(2)O(5)-CaF(2) bioactive glass-ceramics were obtained by sintering method. The crystallization behavior, phase composition, morphology and structure of glass-ceramics were characterized. The bending strength, elastic modulus, fracture toughness, micro-hardness and thermal expansion coefficient (TEC) of glass-ceramics were investigated. The in vitro bioactivity and cytotoxicity tests were used to evaluate the bioactivity and biocompatibility of glass-ceramics. The sedimentation mechanism and growth process of apatites on sample surface were discussed. The results showed that the mainly crystalline phases of glass-ceramics were Ca(5)(PO4)3F (fluorapatite) and β-CaSiO(3). (β-wollastonite). m-ZrO(2) (monoclinic zirconia) declined the crystallization temperatures of glasses. t-ZrO(2) (tetragonal zirconia) increased the crystallization temperature of Ca(5)(PO4)(3)F and declined the crystallization temperature of β-CaSiO(3). t-ZrO(2) greatly increased the fracture toughness, bending strength and micro-hardness of glass-ceramics. The nanometer apatites were induced on the surface of glass-ceramic after soaking 28 days in SBF (simulated body fluid), indicating the glass-ceramic has good bioactivity. The in vitro cytotoxicity test demonstrated the glass-ceramic has no toxicity to cell. Copyright © 2014 Elsevier B.V. All rights reserved.

  16. Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

    Directory of Open Access Journals (Sweden)

    Dan Zhu

    2014-03-01

    Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

  17. BaSi2 formation mechanism in thermally evaporated films and its application to reducing oxygen impurity concentration

    Science.gov (United States)

    Hara, Kosuke O.; Yamamoto, Chiaya; Yamanaka, Junji; Arimoto, Keisuke; Nakagawa, Kiyokazu; Usami, Noritaka

    2018-04-01

    Thermal evaporation is a simple and rapid method to fabricate semiconducting BaSi2 films. In this study, to elucidate the BaSi2 formation mechanism, the microstructure of a BaSi2 epitaxial film fabricated by thermal evaporation has been investigated by transmission electron microscopy. The BaSi2 film is found to consist of three layers with different microstructural characteristics, which is well explained by assuming two stages of film deposition. In the first stage, BaSi2 forms through the diffusion of Ba atoms from the deposited Ba-rich film to the Si substrate while in the second stage, the mutual diffusion of Ba and Si atoms in the film leads to BaSi2 formation. On the basis of the BaSi2 formation mechanism, two issues are addressed. One is the as-yet unclarified reason for epitaxial growth. It is found important to quickly form BaSi2 in the first stage for the epitaxial growth of upper layers. The other issue is the high oxygen concentration in BaSi2 films around the BaSi2-Si interface. Two routes of oxygen incorporation, i.e., oxidation of the Si substrate surface and initially deposited Ba-rich layer by the residual gas, are identified. On the basis of this knowledge, oxygen concentration is decreased by reducing the holding time of the substrate at high temperatures and by premelting of the source. In addition, X-ray diffraction results show that the decrease in oxygen concentration can lead to an increased proportion of a-axis-oriented grains.

  18. Palladium transport in SiC

    International Nuclear Information System (INIS)

    Olivier, E.J.; Neethling, J.H.

    2012-01-01

    Highlights: ► We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. ► The high temperature mobility of palladium silicides within polycrystalline SiC was studied. ► Corrosion of SiC by Pd was seen in all cases. ► The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. ► The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd 2 Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  19. Palladium transport in SiC

    Energy Technology Data Exchange (ETDEWEB)

    Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. Black-Right-Pointing-Pointer The high temperature mobility of palladium silicides within polycrystalline SiC was studied. Black-Right-Pointing-Pointer Corrosion of SiC by Pd was seen in all cases. Black-Right-Pointing-Pointer The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. Black-Right-Pointing-Pointer The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd{sub 2}Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  20. Low-temperature Au/a-Si wafer bonding

    International Nuclear Information System (INIS)

    Jing, Errong; Xiong, Bin; Wang, Yuelin

    2011-01-01

    The Si/SiO 2 /Ti/Au–Au/Ti/a-Si/SiO 2 /Si bonding structure, which can also be used for the bonding of non-silicon material, was investigated for the first time in this paper. The bond quality test showed that the bond yield, bond repeatability and average shear strength are higher for this bonding structure. The interfacial microstructure analysis indicated that the Au-induced crystallization of the amorphous silicon process leads to big Si grains extending across the bond interface and Au filling the other regions of the bond interface, which result into a strong and void-free bond interface. In addition, the Au-induced crystallization reaction leads to a change in the IR images of the bond interface. Therefore, the IR microscope can be used to evaluate and compare the different bond strengths qualitatively. Furthermore, in order to verify the superiority of the bonding structure, the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si (i.e. no Ti/Au layer on the a-Si surface) and Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structures (i.e. Au thermocompression bonding) were also investigated. For the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si bonding structure, the poor bond quality is due to the native oxide layer on the a-Si surface, and for the Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structure, the poor bond quality is caused by the wafer surface roughness which prevents intimate contact and limits the interdiffusion at the bond interface.

  1. Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

    International Nuclear Information System (INIS)

    Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

    2013-01-01

    We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

  2. Effect of CaO2 addition on anaerobic digestion of waste activated sludge at different temperatures and the promotion of valuable carbon source production under ambient condition.

    Science.gov (United States)

    Ping, Qian; Lu, Xiao; Zheng, Ming; Li, Yongmei

    2018-06-06

    The effect of calcium peroxide (CaO 2 ) addition on anaerobic digestion (AD) of waste activated sludge (WAS) at different temperatures (20 °C, 35 °C, and 55 °C) were investigated. The results show that CaO 2 addition had significant positive effect on short-chain fatty acids (SCFAs) production under ambient and mesophilic conditions. Polysaccharides and proteins embedded in extracellular polymeric substances (EPS) were effectively released from inner fraction to outer fraction, and non-biodegradable humic-like substances were decreased while easily biodegradable tryptophan-like proteins increased. These effects were most remarkable under ambient conditions. However, CaO 2 addition was unfavorable to thermophilic AD because of high free ammonia concentrations and the accumulation of humic-like substances. Temperature showed a stronger effect than CaO 2 on microbial community structure, but CaO 2 addition was more effective than temperature in enhancing hydrolytic and acidifying microorganisms. Predictive functional profiling indicated that microbial hydrolysis, metabolism and acidification were promoted by CaO 2 under ambient conditions. Copyright © 2018 Elsevier Ltd. All rights reserved.

  3. Porous SiC/SiC composites development for industrial application

    International Nuclear Information System (INIS)

    Maeta, S.; Hinoki, T.

    2014-01-01

    Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

  4. Conversion of South African coal fly ash into high-purity ZSM-5 zeolite without additional source of silica or alumina and its application as a methanol-to-olefins catalyst

    CSIR Research Space (South Africa)

    Missengue, RNM

    2018-03-01

    Full Text Available Characteristics of ZSM-5 synthesized from H2SO4-treated coal fly ash and fused coal fly ash extracts are compared in this study. In the synthesis process, fused coal fly ash extract (without an additional silica source) was used in the synthesis...

  5. Crystallization of mordenite zeolite with seed addition in reaction mixtures with different SiO{sub 2}/Al{sub 2}O{sub 3} ratios; Cristalizacao da zeolita mordenita com adicao de sementes em meio reacionais com diferentes razoes SiO{sub 2}/Al{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Cysneiros, O.M.S.; Silva, B.J.B.; Silva, A.O.S.; Alencar, S.L.; Santos, R.B.; Soares, P.F.M.; Mendonca, T.R.D.; Sousa Junior, L.V.; Santos, J.R., E-mail: brunojbarros@hotmail.com [Universidade Federal de Alagoas (UFAL), Maceio (Brazil). Departamento de Engenharia Quimica. Laboratorio de Sintese de Catalisadores

    2016-04-15

    The synthesis of samples of mordenite were performed using the hydrothermal method using two different types of crystallization seed (mordenite and ferrierite), where they were exploited to change some parameters of the synthesis, such as SiO{sub 2}/Al{sub 2}O{sub 3} = 20, 60 and 100 and the ratio OH/SiO{sub 2} = 0.2, 0.3 and 0.4, at different times of crystallization, at a temperature of 170 °C. The samples were characterized by X-ray diffraction (XRD), thermogravimetric analysis (TGA/DTA), nitrogen adsorption at -196 °C (BET) and temperature programmed desorption of ammonia (NH{sub 3}-TPD). It was found that the use of the ratio OH/SiO{sub 2} = 0.4, together with the seeds of the most MOR and FER crystalline samples were obtained, demonstrating the critical role of mineralizing agent OH{sup -} in the middle. (author)

  6. Electrical properties of Si/Si1-xGex/Si inverted modulation doped structures

    International Nuclear Information System (INIS)

    Sadeghzadeh, M.A.

    1998-12-01

    This thesis is a report of experimental investigations of growth strategy and electrical properties of Si/Si 1-x Ge x /Si inverted Modulation Doped (MD) structures grown by solid source Molecular Beam Epitaxy (MBE). If the grown Si layer is B-doped at some distance (as spacer) before or after the alloy layer, this remote doping induces the formation of a quasi Two Dimensional Hole Gas (2-DHG) near to the inverted (SiGe on Si) or normal (Si on SiGe) heterointerfaces of the Si/Si 1-x Ge x /Si quantum well, respectively. The latter arrangement is the well known 'normal' MD structure but the former one is the so-called 'inverted' MD structure which is of great interest for Field Effect Transistor (FET) applications. A reproducible growth strategy was employed by the use of a thick (400nm) Si cap for inverted MD structures with Ge composition in the range of 16-23%. Boron segregation and cap surface charges are significant in these inverted structures with small ( 20nm) spacer layers, respectively. It was demonstrated by secondary ion mass spectroscopy (SIMS) that boron segregation, which causes a reduction in the effective spacer dimension, can be suppressed by growth interruption after boron doping. The enhancement in hole sheet density with increasing Si cap layer thickness, is attributed to a reduction in the influence of positive surface charges in these structures. Top-gated devices were fabricated using these structures and the hole sheet density could be varied by applying a voltage to the metal-semiconductor gate, and the maximum Hall mobility of 5550 cm 2 V -1 s -1 with 4.2x10 11 cm -2 was measured (at 1.6K) in these structures. Comparison of measured Hall mobility (at 4.2K) as a function of hole sheet density in normal and inverted MD structures implies that both 2-DHG confined at normal and/or inverted structures are subjected to very similar interface charge, roughness, and alloy scattering potentials. Low temperatures magnetotransport measurements (down to

  7. Surface roughening of undoped and in situ B-doped SiGe epitaxial layers deposited by using reduced pressure chemical vapor deposition

    Science.gov (United States)

    Kim, Youngmo; Park, Jiwoo; Sohn, Hyunchul

    2018-01-01

    Si1- x Ge x (:B) epitaxial layers were deposited by using reduced pressure chemical vapor deposition with SiH4, GeH4, and B2H6 source gases, and the dependences of the surface roughness of undoped Si1- x Ge x on the GeH4 flow rate and of Si1- x Ge x :B on the B2H6 flow rate were investigated. The root-mean-square (RMS) roughness value of the undoped Si1- x Ge x at constant thickness increased gradually with increasing Ge composition, resulting from an increase in the amplitude of the wavy surface before defect formation. At higher Ge compositions, the residual strain in Si1- x Ge x significantly decreased through the formation of defects along with an abrupt increase in the RMS roughness. The variation of the surface roughness of Si1- x Ge x :B depended on the boron (B) concentration. At low B concentrations, the RMS roughness of Si1- x Ge x remained constant regardless of Ge composition, which is similar to that of undoped Si1- x Ge x . However, at high B concentrations, the RMS roughness of Si1- x Ge x :B increased greatly due to B islanding. In addition, at very high B concentrations ( 9.9 at%), the RMS roughness of Si1- x Ge x :B decreased due to non-epitaxial growth.

  8. Rare Type of Course and Distribution of an Additional Right Hepatic Artery: A Possible Source of Iatrogenic Injury During Hepato-biliary and Pancreatic Surgeries

    Directory of Open Access Journals (Sweden)

    Prakashchandra Shetty

    2017-07-01

    Full Text Available Celiac artery shows frequent variations in its branching pattern. Knowledge of its possible variations is useful in gastric, pancreatic and hepato-biliary surgeries. During our dissection classes, we observed a rare variation of the branching pattern of celiac trunk. It divided normally into its three branches; left gastric, splenic and common hepatic arteries. Left gastric and splenic arteries were normal in their course and distribution. The common hepatic artery trifurcated to give hepatic artery proper, gastroduodenal artery and an additional right hepatic artery. The branching pattern of hepatic artery proper and gastroduodenal arteries was normal. The additional right hepatic artery gave origin to a right gastric artery and a large pancreatic branch to the head of the pancreas. It coursed parallel to the bile duct, being on its right side, passed through the Calot’s triangle and entered the right lobe of liver through the fossa for gall bladder. In the Calot’s triangle, it gave a cystic branch to the gall bladder. We discuss the clinical importance of this rare variation in this paper.

  9. Additive manufacturing.

    Science.gov (United States)

    Mumith, A; Thomas, M; Shah, Z; Coathup, M; Blunn, G

    2018-04-01

    Increasing innovation in rapid prototyping (RP) and additive manufacturing (AM), also known as 3D printing, is bringing about major changes in translational surgical research. This review describes the current position in the use of additive manufacturing in orthopaedic surgery. Cite this article: Bone Joint J 2018;100-B:455-60.

  10. Graphene synthesis on SiC: Reduced graphitization temperature by C-cluster and Ar-ion implantation

    International Nuclear Information System (INIS)

    Zhang, R.; Li, H.; Zhang, Z.D.; Wang, Z.S.; Zhou, S.Y.; Wang, Z.; Li, T.C.; Liu, J.R.; Fu, D.J.

    2015-01-01

    Thermal decomposition of SiC is a promising method for high quality production of wafer-scale graphene layers, when the high decomposition temperature of SiC is substantially reduced. The high decomposition temperature of SiC around 1400 °C is a technical obstacle. In this work, we report on graphene synthesis on 6H–SiC with reduced graphitization temperature via ion implantation. When energetic Ar, C 1 and C 6 -cluster ions implanted into 6H–SiC substrates, some of the Si–C bonds have been broken due to the electronic and nuclear collisions. Owing to the radiation damage induced bond breaking and the implanted C atoms as an additional C source the graphitization temperature was reduced by up to 200 °C

  11. Decoupling of unpolluted temperate forests from rock nutrient sources revealed by natural 87Sr/86Sr and 84Sr tracer addition

    Science.gov (United States)

    Kennedy, Martin J.; Hedin, Lars O.; Derry, Louis A.

    2002-01-01

    An experimental tracer addition of 84Sr to an unpolluted temperate forest site in southern Chile, as well as the natural variation of 87Sr/86Sr within plants and soils, indicates that mechanisms in shallow soil organic horizons are of key importance for retaining and recycling atmospheric cation inputs at scales of decades or less. The dominant tree species Nothofagus nitida feeds nearly exclusively (>90%) on cations of atmospheric origin, despite strong variations in tree size and location in the forest landscape. Our results illustrate that (i) unpolluted temperate forests can become nutritionally decoupled from deeper weathering processes, virtually functioning as atmospherically fed ecosystems, and (ii) base cation turnover times are considerably more rapid than previously recognized in the plant available pool of soil. These results challenge the prevalent paradigm that plants largely feed on rock-derived cations and have important implications for understanding sensitivity of forests to air pollution. PMID:12119394

  12. Thermodynamics of the interaction of UO2 with carbon in the presence of the additives Al2O3XSiO2, SiC, and UC2

    International Nuclear Information System (INIS)

    Khromov, Y.F.; Suistunov, D.E.; Zhmurov, S.A.

    1986-01-01

    The authors investigate the thermodynamics of the interaction of UO 2 with C in the presence of the additives, viz., aluminosilicate Al 2 O 3 XSiO 2 , silicon carbide, and uranium dicarbide. The studies were carried out according to the Knudsen method. The characteristics of the components and the experimental systems in contact with carbon are presented. The obtained experimental and calculated thermodynamic data permit one to describe the interaction process of uranium-dioxide-containing additives with carbon

  13. An electrostatic ion pump with nanostructured Si field emission electron source and Ti particle collectors for supporting an ultra-high vacuum in miniaturized atom interferometry systems

    International Nuclear Information System (INIS)

    Basu, Anirban; Velásquez-García, Luis F

    2016-01-01

    We report a field emission-based, magnetic-less ion pump architecture for helping maintain a high vacuum within a small chamber that is compatible with miniaturized cold-atom interferometry systems. A nanostructured silicon field emitter array, with each nano-sharp tip surrounded by a self-aligned proximal gate electrode, is used to generate a surplus of electrons that cause impact ionization of gas molecules. A two-stage cylindrical electron collector, made of titanium, is used to increase the travel distance of the electrons, augmenting the ionization probability; gas ionization is subsequently followed by gettering of the ions by a negatively charged, annular-shaped titanium electrode. A proof-of-concept pump prototype was characterized using a 25 cm 3 stainless steel vacuum chamber backed up by an external turbomolecular pump, a diaphragm pump, and a standard ion pump. Pumping action was observed with the electrostatic pump operating alone after an initial rapid rise of the chamber pressure due to electron/ion scrubbing. In addition, running the electrostatic pump in combination with the standard ion pump results in a lower vacuum level compared to the vacuum level produced by the standard ion pump acting alone. A proposed reduced-order model accurately predicts the functional dependence of the pressure versus time data and provides a good estimate of the characteristic pumping time constant inferred from the experiments. (paper)

  14. Food additives

    Science.gov (United States)

    ... GO About MedlinePlus Site Map FAQs Customer Support Health Topics Drugs & Supplements Videos & Tools Español You Are Here: Home → Medical Encyclopedia → Food additives URL of this page: //medlineplus.gov/ency/article/ ...

  15. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  16. Effect of different additions on the crystallization behavior and magnetic properties of magnetic glass–ceramic in the system Fe2O3–ZnO–CaO–SiO2

    Directory of Open Access Journals (Sweden)

    Salwa A.M. Abdel-Hameed

    2012-04-01

    Full Text Available This work pointed out the preparation of a magnetic glass–ceramic in the system Fe2O3·ZnO·CaO·SiO2. The base composition was designed to crystallize about 60% magnetite. The influence of adding TiO2, Na2O and P2O5 separately or as mixtures was studied. The DTA of the glasses revealed a decrease in the thermal effects by adding P2O5, TiO2 and Na2O in an increasing order. The X-ray diffraction patterns showed the presence of nanometric magnetite crystals in a glassy matrix after cooling from the melting temperature. The crystallization of magnetite increased by adding TiO2, and P2O5, respectively, and decreased by adding Na2O. Heat treatment was carried out for the glasses in the temperature range of 1000–1050 °C, for different time periods, and led to the appearance of hematite and β-wollastonite, which was slightly increased by adding P2O5 or TiO2 and greatly enhanced by adding Na2O. Samples containing mixtures of TiO2, Na2O, and P2O5 showed a summation of the effects of those oxides. The microstructure of the samples was examined by using TEM, which revealed a crystallite size of magnetite to be in the range of 52–90 nm. Magnetic hysteresis cycles were analyzed using a vibrating sample magnetometer with a maximum applied field of 10 kOe at room temperature in quasi-static conditions. From the obtained hysteresis loops, the saturation magnetization (Ms, remanence magnetization (Mr and coercivity (Hc were determined. The results showed that the prepared magnetic glass–ceramics are expected to be useful for a localized treatment of cancer.

  17. Si-Sb-Te materials for phase change memory applications

    International Nuclear Information System (INIS)

    Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

    2011-01-01

    Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

  18. NGSI student activities in open source information analysis in support of the training program of the U.S. DOE laboratories for the entry into force of the additional protocol

    Energy Technology Data Exchange (ETDEWEB)

    Sandoval, M Analisa [Los Alamos National Laboratory; Uribe, Eva C [Los Alamos National Laboratory; Sandoval, Marisa N [Los Alamos National Laboratory; Boyer, Brian D [Los Alamos National Laboratory; Stevens, Rebecca S [Los Alamos National Laboratory

    2009-01-01

    In 2008 a joint team from Los Alamos National Laboratory (LANL) and Brookhaven National Laboratory (BNL) consisting of specialists in training of IAEA inspectors in the use of complementary access activities formulated a training program to prepare the U.S. Doe laboratories for the entry into force of the Additional Protocol. As a major part of the support of the activity, LANL summer interns provided open source information analysis to the LANL-BNL mock inspection team. They were a part of the Next Generation Safeguards Initiative's (NGSI) summer intern program aimed at producing the next generation of safeguards specialists. This paper describes how they used open source information to 'backstop' the LANL-BNL team's effort to construct meaningful Additional Protocol Complementary Access training scenarios for each of the three DOE laboratories, Lawrence Livermore National Laboratory, Idaho National Laboratory, and Oak Ridge National Laboratory.

  19. Enriching 28Si beyond 99.9998 % for semiconductor quantum computing

    Science.gov (United States)

    Dwyer, K. J.; Pomeroy, J. M.; Simons, D. S.; Steffens, K. L.; Lau, J. W.

    2014-08-01

    Using a laboratory-scale apparatus, we enrich 28Si and produce material with 40 times less residual 29Si than previously reported. Starting from natural abundance silane gas, we offer an alternative to industrial gas centrifuges for providing materials critical for long spin coherence times in quantum information devices. Using a mass spectrometry approach, silicon ions are produced from commercial silane gas and the isotopes are separated in a magnetic sector analyzer before deposition onto a Si(1 0 0) substrate. Isotope fractions for 29Si and 30Si of <1 × 10-6 are found in the deposited films using secondary ion mass spectrometry. Additional assessments of the deposited films are also presented as we work to develop substrates and source material to support the growing silicon quantum computing community. Finally, we demonstrate modulation of the 29Si concentration in a deposited film as a precursor to dual enrichment of heterostructures and compound materials such as 28Si74Ge.

  20. Application of PhSCF2CF2SiMe3 as a Tandem Anion and Radical Tetrafluoroethylene Equivalent: Fluoride-Catalyzed Addition to N-Substituted Cyclic Imides Followed by Radical Cyclization

    Czech Academy of Sciences Publication Activity Database

    Chernykh, Yana; Opekar, Stanislav; Klepetářová, Blanka; Beier, Petr

    2012-01-01

    Roč. 23, č. 8 (2012), s. 1187-1190 ISSN 0936-5214 R&D Projects: GA ČR GAP207/11/0421 Institutional research plan: CEZ:AV0Z40550506 Keywords : nucleophilic addition * radical reaction * fluorine * heterocycles * imides Subject RIV: CC - Organic Chemistry Impact factor: 2.655, year: 2012

  1. Radiation tolerance of Si{sub 1−y}C{sub y} source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Nakashima, Toshiyuki, E-mail: nakashima_t@cdk.co.jp [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan); Chuo Denshi Kogyo Co., Ltd., 3400 Kohoyama, Matsubase, Uki, Kumamoto (Japan); Asai, Yuki; Hori, Masato; Yoneoka, Masashi; Tsunoda, Isao; Takakura, Kenichiro [Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Gonzalez, Mireia Bargallo [Institut de Microelectronica de Barcelona (Centre Nacional de Microelectronica — Consejo Superior de Investigaciones Cientificas) Campus UAB, 08193 Bellaterra (Spain); Simoen, Eddy [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Claeys, Cor [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium); Yoshino, Kenji [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan)

    2014-04-30

    The 2-MeV electron radiation damage of silicon–carbon source/drain (S/D) n-type metal oxide semiconductor field effect transistors with different carbon (C) concentrations is studied. Before irradiation, an enhancement of the electron mobility with C concentration of the S/D stressors is clearly observed. On the other hand, after electron irradiation, both the threshold voltage shift and the maximum electron mobility degradation are independent on the C concentration for all electron fluences studied. These results indicate that the strain induced electron mobility enhancement due to the C doping is retained after irradiation in the studied devices. - Highlights: • We have investigated the electron irradiation effect of the Si{sub 1−y}C{sub y} S/D n-MOSFETs. • The threshold voltage variations by irradiation are independent on the C doping. • The electron-mobility decreased for all C concentrations by electron irradiation. • The strain induced mobility enhancement effect is retained after irradiation.

  2. Li{sub 4}SiO{sub 4} based breeder ceramics with Li{sub 2}TiO{sub 3}, LiAlO{sub 2} and Li{sub X}La{sub Y}TiO{sub 3} additions, part II: Pebble properties

    Energy Technology Data Exchange (ETDEWEB)

    Kolb, M.H.H., E-mail: Matthias.kolb@kit.edu [Karlsruhe Institute of Technology, Institute for Applied Materials, PO Box 3640, 76021, Karlsruhe (Germany); Knitter, R. [Karlsruhe Institute of Technology, Institute for Applied Materials, PO Box 3640, 76021, Karlsruhe (Germany); Hoshino, T. [Breeding Functional Materials Development Group, Department of Blanket Systems Research, Rokkasho Fusion Institute, Fusion Energy Research and Development Directorate, National Institutes for Quantum and Radiological Science and Technology (QST) (Japan)

    2017-02-15

    Highlights: • The mechanical strength of Li{sub 4}SiO{sub 4}-based breeder pebbles can be improved by adding either LMT, LAO or LLTO as second phase. • The increase in strength is closely linked to a reduction of the open porosity of the pebbles. • All fabricated pebbles show a highly homogenous microstructure with mostly low closed porosity. • Adding LLTO, although it decomposes during sintering, greatly improves the strength of the pebbles. - Abstract: The pebble properties of novel two-phase Li{sub 4}SiO{sub 4} pebbles of 1 mm diameter with additions of Li{sub 2}TiO{sub 3}, LiAlO{sub 2} or Li{sub x}La{sub y}TiO{sub 3} are evaluated in this work as a function of the second phase concentration and the microstructure of the pebbles. The characterization focused on the mechanical strength, microstructure and open as well as closed porosity. Therefore crush load tests, SEM analyses as well as helium pycnometry and optical image analysis were performed, respectively. This work shows that generally additions of a second phase to Li{sub 4}SiO{sub 4} considerably improve the mechanical strength. It also shows that the fabrication processes have to be well-controlled to achieve high mechanical strengths. When Li{sub 2}TiO{sub 3} is added in different concentrations, the determinant for the crush load seems to be the open porosity of the pebbles. The strengthening effect of LiAlO{sub 2} compared to Li{sub 2}TiO{sub 3} is similar, while additions of Li{sub x}La{sub y}TiO{sub 3} increase the mechanical strength much more. Yet, Li{sub 4}SiO{sub 4} and Li{sub x}La{sub y}TiO{sub 3} react with each other to a number of different phases upon sintering. In general the pebble properties of all samples are favorable for use within a fusion breeder blanket.

  3. Thermal Stability of siRNA Modulates Aptamer- conjugated siRNA Inhibition

    Directory of Open Access Journals (Sweden)

    Alexey Berezhnoy

    2012-01-01

    Full Text Available Oligonucleotide aptamer-mediated in vivo cell targeting of small interfering RNAs (siRNAs is emerging as a useful approach to enhance the efficacy and reduce the adverse effects resulting from siRNA-mediated genetic interference. A current main impediment in aptamer-mediated siRNA targeting is that the activity of the siRNA is often compromised when conjugated to an aptamer, often requiring labor intensive and time consuming design and testing of multiple configurations to identify a conjugate in which the siRNA activity has not been significantly reduced. Here, we show that the thermal stability of the siRNA is an important parameter of siRNA activity in its conjugated form, and that siRNAs with lower melting temperature (Tm are not or are minimally affected when conjugated to the 3′ end of 2′F-pyrimidine-modified aptamers. In addition, the configuration of the aptamer-siRNA conjugate retains activity comparable with the free siRNA duplex when the passenger strand is co-transcribed with the aptamer and 3′ overhangs on the passenger strand are removed. The approach described in this paper significantly reduces the time and effort necessary to screening siRNA sequences that retain biological activity upon aptamer conjugation, facilitating the process of identifying candidate aptamer-siRNA conjugates suitable for in vivo testing.

  4. INCLUSIVE SYSTEMATICS FOR SI-28+SI-28 REACTIONS BETWEEN 20 AND 35 MEV PER NUCLEON

    NARCIS (Netherlands)

    BOX, PF; GRIFFIOEN, KA; DECOWSKI, P; BOOTSMA, T; GIERLIK, E; VANNIEUWENHUIZEN, GJ; TWENHOFEL, C; KAMERMANS, R; WILSCHUT, HW; GIORNI, A; MORAND, C; DEMEYER, A; GUINET, D

    Inclusive velocity spectra of heavy ions produced in the Si-28 + Si-28 reaction at 22, 26, 30, and 35 MeV per nucleon were measured and decomposed into peripheral and central components using an analytical moving-source parametrization. The persistence of incomplete fusion followed by evaporation

  5. Nanoscale Structuring by Misfit Dislocations in Si1-xGex/Si Epitaxial Systems

    DEFF Research Database (Denmark)

    Shiryaev, S.Y.; Jensen, Flemming; Hansen, J. Lundsgaard

    1997-01-01

    New capabilities of misfit dislocations for spatial manipulation of islands in Si1-xGex/Si heteroepitaxial systems have been elucidated. Formation of highly ordered Ge-island patterns on substrates prestructured by slip bands of misfit dislocations is revealed. The major sources leading to the or...

  6. Fabrication of highly oriented D03-Fe3Si nanocrystals by solid-state dewetting of Si ultrathin layer

    International Nuclear Information System (INIS)

    Naito, Muneyuki; Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko; Nakao, Motoi; Sudoh, Koichi

    2013-01-01

    In this paper, highly oriented nanocrystals of Fe 3 Si with a D0 3 structure are fabricated on SiO 2 using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO 2 layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe 3 Si nanocrystals with D0 3 , B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe 3 Si nanocrystals with a D0 3 single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0 3 -Fe 3 Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0 3 structure after post-deposition annealing

  7. A soft x-ray photoemission study of the chemisorption and reaction of diethylsilane on Si(100)

    International Nuclear Information System (INIS)

    Lapiano-Smith, D.A.; Himpsel, F.J.

    1993-06-01

    Soft x-ray synchrotron radiation was utilized as the excitation source in a high-resolution photoemission experiment on chemisorption and subsequent reaction of diethylsilane on the Si(100) surface. We have found that diethylsilane chemisorbs dissociatively to form Si-CH 2 CH 3 surface species on Si(100) following a room temperature exposure. These species are identified by two very sharp peaks observed in the valence band spectra positioned at 17.9 and 14.3 eV binding energy. In addition, C 1s core level spectra, measured following exposures of Si(100) substrates as a function of surface temperature, show that carbon, in some form, exists on the Si surface following exposures at every temperature from room temperature to about 600C. While only -CH 2 CH 3 , ethyl groups are observed on the surface at room temperature, these species appear to partially dehydrogenate at 300C, producing a mixture of -CH 2 CH 3 groups and other intermediate carbonaceous species. At a growth temperature of about 400C the intermixing of elemental carbon with Si begins. At higher temperatures, we observe the continued degradation of diethylsilane to produce a Si + C alloy on the surface at 600C. Results indicate that diethylsilane has potential as a molecular precursor for SiC formation by chemical vapor deposition techniques

  8. Improved nucleic acid descriptors for siRNA efficacy prediction.

    Science.gov (United States)

    Sciabola, Simone; Cao, Qing; Orozco, Modesto; Faustino, Ignacio; Stanton, Robert V

    2013-02-01

    Although considerable progress has been made recently in understanding how gene silencing is mediated by the RNAi pathway, the rational design of effective sequences is still a challenging task. In this article, we demonstrate that including three-dimensional descriptors improved the discrimination between active and inactive small interfering RNAs (siRNAs) in a statistical model. Five descriptor types were used: (i) nucleotide position along the siRNA sequence, (ii) nucleotide composition in terms of presence/absence of specific combinations of di- and trinucleotides, (iii) nucleotide interactions by means of a modified auto- and cross-covariance function, (iv) nucleotide thermodynamic stability derived by the nearest neighbor model representation and (v) nucleic acid structure flexibility. The duplex flexibility descriptors are derived from extended molecular dynamics simulations, which are able to describe the sequence-dependent elastic properties of RNA duplexes, even for non-standard oligonucleotides. The matrix of descriptors was analysed using three statistical packages in R (partial least squares, random forest, and support vector machine), and the most predictive model was implemented in a modeling tool we have made publicly available through SourceForge. Our implementation of new RNA descriptors coupled with appropriate statistical algorithms resulted in improved model performance for the selection of siRNA candidates when compared with publicly available siRNA prediction tools and previously published test sets. Additional validation studies based on in-house RNA interference projects confirmed the robustness of the scoring procedure in prospective studies.

  9. Chemical vapor deposition of Si/SiC nano-multilayer thin films

    International Nuclear Information System (INIS)

    Weber, A.; Remfort, R.; Woehrl, N.; Assenmacher, W.; Schulz, S.

    2015-01-01

    Stoichiometric SiC films were deposited with the commercially available single source precursor Et_3SiH by classical thermal chemical vapor deposition (CVD) as well as plasma-enhanced CVD at low temperatures in the absence of any other reactive gases. Temperature-variable deposition studies revealed that polycrystalline films containing different SiC polytypes with a Si to carbon ratio of close to 1:1 are formed at 1000 °C in thermal CVD process and below 100 °C in the plasma-enhanced CVD process. The plasma enhanced CVD process enables the reduction of residual stress in the deposited films and offers the deposition on temperature sensitive substrates in the future. In both deposition processes the film thickness can be controlled by variation of the process parameters such as the substrate temperature and the deposition time. The resulting material films were characterized with respect to their chemical composition and their crystallinity using scanning electron microscope, energy dispersive X-ray spectroscopy (XRD), atomic force microscopy, X-ray diffraction, grazing incidence X-ray diffraction, secondary ion mass spectrometry and Raman spectroscopy. Finally, Si/SiC multilayers of up to 10 individual layers of equal thickness (about 450 nm) were deposited at 1000 °C using Et_3SiH and SiH_4. The resulting multilayers features amorphous SiC films alternating with Si films, which feature larger crystals up to 300 nm size as measured by transmission electron microscopy as well as by XRD. XRD features three distinct peaks for Si(111), Si(220) and Si(311). - Highlights: • Stoichiometric silicon carbide films were deposited from a single source precursor. • Thermal as well as plasma-enhanced chemical vapor deposition was used. • Films morphology, crystallinity and chemical composition were characterized. • Silicon/silicon carbide multilayers of up to 10 individual nano-layers were deposited.

  10. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Directory of Open Access Journals (Sweden)

    Wei-Ting eLai

    2016-02-01

    Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

  11. Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

    DEFF Research Database (Denmark)

    Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

    1986-01-01

    X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

  12. SiC-BASED HYDROGEN SELECTIVE MEMBRANES FOR WATER-GAS-SHIFT REACTION; F

    International Nuclear Information System (INIS)

    Paul K.T. Liu

    2001-01-01

    This technical report summarizes our activities conducted in Yr II. In Yr I we successfully demonstrated the feasibility of preparing the hydrogen selective SiC membrane with a chemical vapor deposition (CVD) technique. In addition, a SiC macroporous membrane was fabricated as a substrate candidate for the proposed SiC membrane. In Yr II we have focused on the development of a microporous SiC membrane as an intermediate layer between the substrate and the final membrane layer prepared from CVD. Powders and supported thin silicon carbide films (membranes) were prepared by a sol-gel technique using silica sol precursors as the source of silicon, and phenolic resin as the source of carbon. The powders and films were prepared by the carbothermal reduction reaction between the silica and the carbon source. The XRD analysis indicates that the powders and films consist of SiC, while the surface area measurement indicates that they contain micropores. SEM and AFM studies of the same films also validate this observation. The powders and membranes were also stable under different corrosive and harsh environments. The effects of these different treatments on the internal surface area, pore size distribution, and transport properties, were studied for both the powders and the membranes using the aforementioned techniques and XPS. Finally the SiC membrane materials are shown to have satisfactory hydrothermal stability for the proposed application. In Yr III, we will focus on the demonstration of the potential benefit using the SiC membrane developed from Yr I and II for the water-gas-shift (WGS) reaction

  13. Slurry sampling high-resolution continuum source electrothermal atomic absorption spectrometry for direct beryllium determination in soil and sediment samples after elimination of SiO interference by least-squares background correction.

    Science.gov (United States)

    Husáková, Lenka; Urbanová, Iva; Šafránková, Michaela; Šídová, Tereza

    2017-12-01

    In this work a simple, efficient, and environmentally-friendly method is proposed for determination of Be in soil and sediment samples employing slurry sampling and high-resolution continuum source electrothermal atomic absorption spectrometry (HR-CS-ETAAS). The spectral effects originating from SiO species were identified and successfully corrected by means of a mathematical correction algorithm. Fractional factorial design has been employed to assess the parameters affecting the analytical results and especially to help in the development of the slurry preparation and optimization of measuring conditions. The effects of seven analytical variables including particle size, concentration of glycerol and HNO 3 for stabilization and analyte extraction, respectively, the effect of ultrasonic agitation for slurry homogenization, concentration of chemical modifier, pyrolysis and atomization temperature were investigated by a 2 7-3 replicate (n = 3) design. Using the optimized experimental conditions, the proposed method allowed the determination of Be with a detection limit being 0.016mgkg -1 and characteristic mass 1.3pg. Optimum results were obtained after preparing the slurries by weighing 100mg of a sample with particle size < 54µm and adding 25mL of 20% w/w glycerol. The use of 1μg Rh and 50μg citric acid was found satisfactory for the analyte stabilization. Accurate data were obtained with the use of matrix-free calibration. The accuracy of the method was confirmed by analysis of two certified reference materials (NIST SRM 2702 Inorganics in Marine Sediment and IGI BIL-1 Baikal Bottom Silt) and by comparison of the results obtained for ten real samples by slurry sampling with those determined after microwave-assisted extraction by inductively coupled plasma time of flight mass spectrometry (TOF-ICP-MS). The reported method has a precision better than 7%. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. Green synthesis of Si-incorporated hydroxyapatite using sodium metasilicate as silicon precursor and in vitro antibiotic release studies.

    Science.gov (United States)

    Abinaya Sindu, P; Kolanthai, Elayaraja; Suganthi, R V; Thanigai Arul, K; Manikandan, E; Catalani, Luiz H; Narayana Kalkura, S

    2017-10-01

    The aim of the current study is to synthesize nanosized silicon incorporated HAp (Si-HAP) using sodium metasilicate as the silicon source. The sol-gel derived samples were further subjected to microwave irradiation. Incorporation of Si into HAp did not alter the HAp phase, as confirmed by the X-ray diffraction analysis (XRD). Moreover, variation in the lattice parameters of the Si-incorporated HAp indicates that Si is substituted into the HAp lattice. The decrease in the intensity of the peaks attributed to hydroxyl groups, which appeared in the FTIR and Raman spectra of Si-HAp, further confirms the Si substitution in HAp lattices. The silicon incorporation enhanced the nanorods length by 70%, when compared to that of pure HAp. Microwave irradiation improved the crystallinity of Si-HAp when compared to as-synthesized Si-HAp samples. As-synthesized Si-incorporated HAp sample showed an intense blue emission under UV excitation. Microwave irradiation reduced the intensity of blue emission and exhibited red shift due to the reduction of defects in the Si-HAp crystal. The morphological change from rod to spherical and ribbon-like forms was observed with an increase in silicon content. Further, Si-HAp exhibited better bioactivity and low dissolution rate. Initially there was a burst release of amoxicillin from all the samples, subsequently it followed a sustained release. The microwave-irradiated HAp showed extended period of sustained release than that of as-synthesized HAp and Si-HAp. Similarly, the microwave-irradiated Si-incorporated samples exhibited prolonged drug release, as compared to that of the as-synthesized samples. Hence, Si-HAp is rapidly synthesized by a simple and cost effective method without inducing any additional phases, as compared to the conventional sintering process. This study provides a new insight into the rapid green synthesis of Si-HAp. Si-HAp could emerge as a promising material for the bone tissue replacement and as a drug delivery system

  15. Recent progress in Si thin film technology for solar cells

    Science.gov (United States)

    Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

    1991-11-01

    Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.

  16. Effects of sulphur addition on modification and mechanical ...

    African Journals Online (AJOL)

    CW Onyia, BA Okorie, NI Amalu, SI Neife ... The results showed that the addition of sulphur to Al-12wt%Si alloy modified the Al-Si eutectic ... of the eutectic silicon structure with significant decrease in mechanical properties of the alloy and this ...

  17. Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Delabie, Annelies; Billen, Arne [KU Leuven, Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, Marc [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-01-01

    Highlights: • Atomic layer is deposited by O{sub 3} chemisorption reaction on H-terminated Si(100). • O-content has critical impact on the epitaxial thickness of the above-deposited Si. • Oxygen atoms at dimer/back bond configurations enable epitaxial Si on O atomic layer. • Oxygen atoms at hydroxyl and more back bonds, disable epitaxial Si on O atomic layer. - Abstract: Epitaxial Si-O superlattices consist of alternating periods of crystalline Si layers and atomic layers of oxygen (O) with interesting electronic and optical properties. To understand the fundamentals of Si epitaxy on O atomic layers, we investigate the O surface species that can allow epitaxial Si chemical vapor deposition using silane. The surface reaction of ozone on H-terminated Si(100) is used for the O deposition. The oxygen content is controlled precisely at and near the atomic layer level and has a critical impact on the subsequent Si deposition. There exists only a small window of O-contents, i.e. 0.7–0.9 atomic layers, for which the epitaxial deposition of Si can be realized. At these low O-contents, the O atoms are incorporated in the Si-Si dimers or back bonds (-OSiH), with the surface Si atoms mainly in the 1+ oxidation state, as indicated by infrared spectroscopy. This surface enables epitaxial seeding of Si. For O-contents higher than one atomic layer, the additional O atoms are incorporated in the Si-Si back bonds as well as in the Si-H bonds, where hydroxyl groups (-Si-OH) are created. In this case, the Si deposition thereon becomes completely amorphous.

  18. Liquid chromatography coupled to different atmospheric pressure ionization sources-quadrupole-time-of-flight mass spectrometry and post-column addition of metal salt solutions as a powerful tool for the metabolic profiling of Fusarium oxysporum.

    Science.gov (United States)

    Cirigliano, Adriana M; Rodriguez, M Alejandra; Gagliano, M Laura; Bertinetti, Brenda V; Godeas, Alicia M; Cabrera, Gabriela M

    2016-03-25

    Fusarium oxysporum L11 is a non-pathogenic soil-borne fungal strain that yielded an extract that showed antifungal activity against phytopathogens. In this study, reversed-phase high-performance liquid chromatography (RP-HPLC) coupled to different atmospheric pressure ionization sources-quadrupole-time-of-flight mass spectrometry (API-QTOF-MS) was applied for the comprehensive profiling of the metabolites from the extract. The employed sources were electrospray (ESI), atmospheric pressure chemical ionization (APCI) and atmospheric pressure photoionization (APPI). Post-column addition of metal solutions of Ca, Cu and Zn(II) was also tested using ESI. A total of 137 compounds were identified or tentatively identified by matching their accurate mass signals, suggested molecular formulae and MS/MS analysis with previously reported data. Some compounds were isolated and identified by NMR. The extract was rich in cyclic peptides like cyclosporins, diketopiperazines and sansalvamides, most of which were new, and are reported here for the first time. The use of post-column addition of metals resulted in a useful strategy for the discrimination of compound classes since specific adducts were observed for the different compound families. This technique also allowed the screening for compounds with metal binding properties. Thus, the applied methodology is a useful choice for the metabolic profiling of extracts and also for the selection of metabolites with potential biological activities related to interactions with metal ions. Copyright © 2015 Elsevier B.V. All rights reserved.

  19. Properties of tribology for Si implanted PET

    International Nuclear Information System (INIS)

    Wu Yuguang; Zhang Tonghe; Zhang Xu; Liu Andong; Xie Mengxia; Zhang Aimin; Chen Jianmin

    2002-01-01

    Polyethylene terephthalate (PET) has been modified with Si ions from a metal vapor arc source (MEVVA). After implantation, the surface structure has been greatly changed. The experimental results of infrared absorption indicated that the particles are referred to rich carbon and SiC particles. The PET has been strengthened by these dispersed particles. The measurement results using nanometer hardness tester reveal that both surface hardness and modulus increase obviously. Therefore the surface wear resistance improved extremely. Finally the modification mechanism of Si implanted PET was discussed

  20. Thermal SiO as a probe of high velocity motions in regions of star formation

    International Nuclear Information System (INIS)

    Downes, D.; Genzel, R.; Hjalmarson, A.; Nyman, L.A.; Roennaeng, B.

    1982-01-01

    New observations of the v = 0, J = = 2→1 line of SiO at 86.8 GHz show a close association of the thermal SiO emission and infrared and maser sources in regions of star formation. In addition to SiO emission with low velocity dispersion (Δν -1 ), we report the first detection of high velocity (''plateau'') emission toward W49 and W51. The low velocity SiO component may come from the core of the molecular cloud which contains the infrared and maser sources. The ''plateau'' may indicate mass clusters. In Orion KL, the positional centroid of the high velocity SiO emission (Vertical BarΔνVertical Bar> or =20 km s -1 ) is near that of the component we identify as the ''18 km s -1 flow''. However, the centriods of the blue- and redshifted wings are displaced from each other by a few arcseconds, to the NW and NE of the position of the 18 km s -1 component. The mass-loss rates of the high velocity flow and the 18 km s -1 flow are similar

  1. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

    International Nuclear Information System (INIS)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-01-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

  2. Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

    2001-01-01

    The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

  3. Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

    International Nuclear Information System (INIS)

    Hartmann, J.M.; Andrieu, F.; Lafond, D.; Ernst, T.; Bogumilowicz, Y.; Delaye, V.; Weber, O.; Rouchon, D.; Papon, A.M.; Cherkashin, N.

    2008-01-01

    We have first of all quantified the impact of pressure on Si and SiGe growth kinetics. Definite growth rate and Ge concentration increases with the pressure have been evidenced at low temperatures (650-750 deg. C). By contrast, the high temperature (950-1050 deg. C) Si growth rate either increases or decreases with pressure (gaseous precursor depending). We have then described the selective epitaxial growth process we use to form Si or Si 0.7 Ge 0.3 :B raised sources and drains on ultra-thin patterned Silicon-On-Insulator (SOI) substrates. We have afterwards presented the specifics of SiGe virtual substrates and of the tensile-strained Si layers grown on top (used as templates for the elaboration of tensily strained-SOI wafers). The tensile strain, which can be tailored from 1.3 up to 3 GPa, leads to an electron mobility gain by a factor of 2 in n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) built on top. High Ge content SiGe virtual substrates can also be used for the elaboration of compressively strained Ge channels, with impressive hole mobility gains (x9) compared to bulk Si. After that, we have described the main structural features of thick Ge layers grown directly on Si (that can be used as donor wafers for the elaboration of GeOI wafers or as the active medium of near infrared photo-detectors). Finally, we have shown how Si/SiGe multilayers can be used for the formation of high performance 3D devices such as multi-bridge channel or nano-beam gate-all-around FETs, the SiGe sacrificial layers being removed thanks to plasma dry etching, wet etching or in situ gaseous HCl etching

  4. Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

    International Nuclear Information System (INIS)

    Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

  5. The Effect of Si Morphology on Machinability of Al-Si Alloys

    Directory of Open Access Journals (Sweden)

    Muhammet Uludağ

    2015-12-01

    Full Text Available Many of the cast parts require some sort of machining like milling, drilling to be used as a finished product. In order to improve the wear properties of Al alloys, Si is added. The solubility of Si in Al is quite low and it has a crystallite type structure. It behaves as particulate metal matrix composite which makes it an attractive element. Thus, the wear and machinability properties of these type of alloys depend on the morphology of Si in the matrix. In this work, Sr was added to alter the morphology of Si in Al-7Si and Al-12Si. Cylindrical shaped samples were cast and machinability characteristics of Sr addition was studied. The relationship between microstructure and machinability was evaluated.

  6. Experimental Investigations on the effect of Additive on the Tensile Properties of Fiber Glass Fabric Lamina

    Science.gov (United States)

    Nava Sai Divya, A.; Raghu Kumar, B., Dr; Lakshmi Narayana, G., Dr

    2017-09-01

    The main objective of this work is to investigate the effect of additives on tensile behaviour of fiber glass fabric at lamina level to explore an alternative skin material for the outer body of aerospace applications and machines. This experimental work investigates the effect of silica concentration in epoxy resin lapox L-12 on the tensile properties of glass fabric lamina of 4H-satin weave having 3.6 mm thickness. The lamina was prepared by using hand lay-up method and tests were conducted on it. Various tensile properties values obtained from experimentation were compared for four glass fiber lamina composites fabricated by adding the silica powder to resin bath. The effect of variations in silica concentration (0% SiO2, 5% SiO2, 10% SiO2 and 15% SiO2) on the tensile properties of prepared material revealed that maximum stiffness was obtained at 15% and yield strength at 10% SiO2 concentration in glass fiber lamina. Increasing the silica concentration beyond 10% had led to deterioration in the material properties. The experimentation that was carried out on test specimen was reasonably successful as the effect of silica powder as an additive in glass fiber lamina enhanced the mechanical properties up to certain limit. The underpinning microscopic behaviour at the source of these observations will be investigated in a follow up work.

  7. Microstructural optimization of high temperature SiC/SiC composites by nite process

    International Nuclear Information System (INIS)

    Shimoda, K.; Park, J.S.; Hinoki, T.; Kohyama, A.

    2007-01-01

    the NITE composites at 1300 deg. C. Highly-densified matrix by NITE process could restrict the oxygen diffusion through pores and hence fiber and matrix interphase within the composites was protective against the oxidation. It is assumed that about 12% degradation in the maximum strength at 1500 deg. C for NITE composites is due to a marked mass loss (about 6%) by the active oxidation of the SiC crystallites occurred concurrently with the vaporization of the amorphous grain boundary phase which was comprised mainly of additives. (authors)

  8. Microstructural optimization of high temperature SiC/SiC composites by nite process

    Energy Technology Data Exchange (ETDEWEB)

    Shimoda, K. [Kyoto Univ., Graduate School of Energy Science (Japan); Park, J.S. [Kyoto Univ., Institute of Advanced Energy (Japan); Hinoki, T.; Kohyama, A. [Kyoto Univ., lnstitute of Advanced Energy, Gokasho, Uji (Japan)

    2007-07-01

    the NITE composites at 1300 deg. C. Highly-densified matrix by NITE process could restrict the oxygen diffusion through pores and hence fiber and matrix interphase within the composites was protective against the oxidation. It is assumed that about 12% degradation in the maximum strength at 1500 deg. C for NITE composites is due to a marked mass loss (about 6%) by the active oxidation of the SiC crystallites occurred concurrently with the vaporization of the amorphous grain boundary phase which was comprised mainly of additives. (authors)

  9. MuSiK Projekt:Multimaterialdruck von C/Si/SiC-Keramiken

    OpenAIRE

    Marigo, Gloria; Wahl, Larissa; Nauditt, Gotthard

    2017-01-01

    Poster über den ersten 6 Monate von MuSiK Projekt. Additive Verfahren wurden ursprünglich zur effizienten Herstellung von Mustern und Prototypen entwickelt und bieten besondere Einsatzpotentiale, die mittlerweile auch für die Kleinserienproduktion hochinteressant sind. Im Bereich der keramischen Komponenten ist der Einsatz additiver Verfahren bislang nicht weit verbreitet. Ein Grund dafür ist unter anderem die eingeschränkte Verfügbarkeit der notwendigen Fertigungsanlagen und entsprech...

  10. The Stellar Imager (SI) Project: A Deep Space UV/Optical Interferometer (UVOI) to Observe the Universe at 0.1 Milli-Arcsec Angular Resolution

    Science.gov (United States)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2008-01-01

    The Stellar Imager (SI) is a space-based, UV/ Optical Interferometer (UVOI) designed to enable 0.1 milliarcsecond (mas) spectral imaging of stellar surfaces and of the Universe in general. It will also probe via asteroseismology flows and structures in stellar interiors. SI's science focuses on the role of magnetism in the Universe and will revolutionize our understanding, of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes, such as accretion, in the Universe. The ultra-sharp images of SI will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI is a "Flagship and Landmark Discovery Mission" in the 2005 Heliophysics Roadmap and a potential implementation of the UVOI in the 2006 Science Program for NASA's Astronomy and Physics Division. We present here the science goals of the SI Mission, a mission architecture that could meet those goals, and the technology development needed to enable this missin. Additional information on SI can be found at: http://hires.gsfc.nasa.gov/si/.

  11. Hybrid III-V-on-Si Vertical Cavity laser for Optical Interconnects

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Semenova, Elizaveta; Chung, Il-Sug

    2013-01-01

    Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers.......Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers....

  12. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    Science.gov (United States)

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-06

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  13. Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

    International Nuclear Information System (INIS)

    Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

    2013-01-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

  14. Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

    Science.gov (United States)

    Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

    2018-02-01

    As novel materials for food contact packaging, inorganic silicon oxide (SiO x ) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiO x films for food packaging it is vital to study the interaction between SiO x layers and food contaminants, as well as the function of a SiO x barrier layer in antioxidant migration resistance. In this study, we deposited a SiO x layer on polylactic acid (PLA)-based films to prepare SiO x /PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiO x /PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiO x layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiO x /PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiO x /PLA coated films increase. The SiO x barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiO x /PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

  15. Technique development for modulus, microcracking, hermeticity, and coating evaluation capability characterization of SiC/SiC tubes

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Xunxiang [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Ang, Caen K. [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Katoh, Yutai [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

    2016-08-01

    Driven by the need to enlarge the safety margins of nuclear fission reactors in accident scenarios, research and development of accident-tolerant fuel has become an important topic in the nuclear engineering and materials community. A continuous-fiber SiC/SiC composite is under consideration as a replacement for traditional zirconium alloy cladding owing to its high-temperature stability, chemical inertness, and exceptional irradiation resistance. An important task is the development of characterization techniques for SiC/SiC cladding, since traditional work using rectangular bars or disks cannot directly provide useful information on the properties of SiC/SiC composite tubes for fuel cladding applications. At Oak Ridge National Laboratory, experimental capabilities are under development to characterize the modulus, microcracking, and hermeticity of as-fabricated, as-irradiated SiC/SiC composite tubes. Resonant ultrasound spectroscopy has been validated as a promising technique to evaluate the elastic properties of SiC/SiC composite tubes and microcracking within the material. A similar technique, impulse excitation, is efficient in determining the basic mechanical properties of SiC bars prepared by chemical vapor deposition; it also has potential for application in studying the mechanical properties of SiC/SiC composite tubes. Complete evaluation of the quality of the developed coatings, a major mitigation strategy against gas permeation and hydrothermal corrosion, requires the deployment of various experimental techniques, such as scratch indentation, tensile pulling-off tests, and scanning electron microscopy. In addition, a comprehensive permeation test station is being established to assess the hermeticity of SiC/SiC composite tubes and to determine the H/D/He permeability of SiC/SiC composites. This report summarizes the current status of the development of these experimental capabilities.

  16. Influence of the Si content on the microstructure and mechanical properties of Ti-Ni-Cu-Si-Sn nanocomposite alloys

    Energy Technology Data Exchange (ETDEWEB)

    Fornell, J., E-mail: Jordinafornell@gmail.com [Departament de Fisica, Universitat Autonoma de Barcelona, 08193 Bellaterra (Spain); Van Steenberge, N. [OCAS N.V., Pres. J.F. Kennedylaan 3, BE-9060 Zelzate (Belgium); Surinach, S.; Baro, M.D. [Departament de Fisica, Universitat Autonoma de Barcelona, 08193 Bellaterra (Spain); Sort, J. [Departament de Fisica, Universitat Autonoma de Barcelona, 08193 Bellaterra (Spain); Institucio Catalana de Recerca i Estudis Avancats (Spain)

    2012-09-25

    Highlights: Black-Right-Pointing-Pointer We study the effects of Si addition of Ti-Ni-Cu-Si-Sn alloy. Black-Right-Pointing-Pointer The microstructure evolution is correlated with the obtained mechanical and elastic properties. Black-Right-Pointing-Pointer Higher Young's modulus and larger hardness values are obtained in samples with higher Si contents. - Abstract: (Ti{sub 48}Ni{sub 32}Cu{sub 8}Si{sub 8}Sn{sub 4}){sub 100-x}Si{sub x} (x = 0, 2, 4 and 6) alloys were prepared by levitation melting mixtures of the high purity elements in an Ar atmosphere. Rods of 3 mm in diameter were obtained from the melt by copper mould casting. The effects of Si addition on the microstructure, elastic and mechanical properties of the Ti{sub 48}Ni{sub 32}Cu{sub 8}Si{sub 8}Sn{sub 4} alloy were investigated by scanning electron microscopy, X-ray diffraction, acoustic measurements and nanoindentation. The main phases composing the Ti{sub 48}Ni{sub 32}Cu{sub 8}Si{sub 8}Sn{sub 4} alloy are B2 NiTi, B19 Prime NiTi and tetragonal Ti{sub 2}Ni. Additional phases, like Ti{sub 5}Si{sub 3} or Ni{sub 2}Ti{sub 2}Si, become clearly visible in samples with higher Si contents. The microstructure evolution is correlated with the obtained mechanical and elastic properties. These alloys exhibit very high hardness values, which increase with the Si content, from 9 GPa (for x = 0) to around 10.5 GPa (for x = 6). The Young's modulus of Ti{sub 48}Ni{sub 32}Cu{sub 8}Si{sub 8}Sn{sub 4} (around 115 GPa) also increases significantly with Si addition, up to 160 GPa for x = 6.

  17. Photoluminescence of Mg_2Si films fabricated by magnetron sputtering

    International Nuclear Information System (INIS)

    Liao, Yang-Fang; Xie, Quan; Xiao, Qing-Quan; Chen, Qian; Fan, Meng-Hui; Xie, Jing; Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di

    2017-01-01

    determined from the quenching of major luminescence peak(1342 nm) as a function of temperature in the Mg_2Si film grown on Si (111) substrate, which is much smaller than that deduced in the sample grown on glass substrate (about 25meV). The small activation energy can be attributed to the additional nonradiative centers originated from relatively poor crystal quality.The physical mechanism responsible for the measured ∼1342 nm and other three longer wavelengths emissions may be respectively result from strong Mg_i donor level to valence band transitions and other defect-related radiative recombination occurred in the Mg_2Si films.

  18. Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

    Science.gov (United States)

    Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

  19. Characterization of SiC based composite materials by the infiltration of ultra-fine SiC particles

    International Nuclear Information System (INIS)

    Lee, J.K.; Lee, S.P.; Byun, J.H.

    2010-01-01

    The fabrication route of SiC materials by the complex compound of ultra-fine SiC particles and oxide additive materials has been investigated. Especially, the effect of additive composition ratio on the characterization of SiC materials has been examined. The characterization of C/SiC composites reinforced with plain woven carbon fabrics was also investigated. The fiber preform for C/SiC composites was prepared by the infiltration of complex mixture into the carbon fabric structure. SiC based composite materials were fabricated by a pressure assisted liquid phase sintering process. SiC materials possessed a good density higher than about 3.0 Mg/m 3 , accompanying the creation of secondary phase by the chemical reaction of additive materials. C/SiC composites also represented a dense morphology in the intra-fiber bundle region, even if this material had a sintered density lower than that of monolithic SiC materials. The flexural strength of SiC materials was greatly affected by the composition ratio of additive materials.

  20. Characterization of SiCf/SiC and CNT/SiC composite materials produced by liquid phase sintering

    International Nuclear Information System (INIS)

    Lee, J.K.; Lee, S.P.; Cho, K.S.; Byun, J.H.; Bae, D.S.

    2011-01-01

    This paper dealt with the microstructure and mechanical properties of SiC based composites reinforced with different reinforcing materials. The composites were fabricated using reinforcing materials of carbon nanotubes (CNT) and Tyranno Lox-M SiC chopped fibers. The volume fraction of carbon nanotubes was also varied in this composite system. An Al 2 O 3 -Y 2 O 3 powder mixture was used as a sintering additive in the consolidation of the SiC matrix. The characterization of the composites was investigated by means of SEM and three point bending tests. These composites showed a dense morphology of the matrix region, by the creation of a secondary phase. The composites reinforced with SiC chopped fibers possessed a flexural strength of about 400 MPa at room temperature. The flexural strength of the carbon nanotubes composites had a tendency to decrease with increased volume fraction of the reinforcing material.

  1. Effect of Si on the reversibility of stress-induced martensite in Fe-Mn-Si shape memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    Stanford, N. [Centre for Material and Fibre Innovation, Deakin University, Geelong, Victoria 3217 (Australia); Dunne, D.P., E-mail: druce_dunne@uow.edu.au [Faculty of Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia)

    2010-12-15

    Fe-Mn-Si is a well-characterized ternary shape memory alloy. Research on this alloy has consistently shown that the addition of 5-6 wt.% Si is desirable to enhance the reversibility of stress-induced martensite vis-a-vis shape memory. This paper examines the effect of Si on the morphology and the crystallography of the martensite in the Fe-Mn-Si system. It is concluded that the addition of Si increases the c/a ratio of the martensite, reduces the transformation volume change and decreases the atomic spacing difference between the parallel close-packed directions in the austenite-martensite interface (habit) plane. It is proposed that, in addition to austenite strengthening, Si enhances reversibility by reducing the volume change and the interfacial atomic mismatch between the martensite and the austenite. Although shape memory is improved, transformation reversibility remains limited by the necessary misfit dislocations that accommodate the atomic spacing differences in the interface.

  2. Effect of Si on the reversibility of stress-induced martensite in Fe-Mn-Si shape memory alloys

    International Nuclear Information System (INIS)

    Stanford, N.; Dunne, D.P.

    2010-01-01

    Fe-Mn-Si is a well-characterized ternary shape memory alloy. Research on this alloy has consistently shown that the addition of 5-6 wt.% Si is desirable to enhance the reversibility of stress-induced martensite vis-a-vis shape memory. This paper examines the effect of Si on the morphology and the crystallography of the martensite in the Fe-Mn-Si system. It is concluded that the addition of Si increases the c/a ratio of the martensite, reduces the transformation volume change and decreases the atomic spacing difference between the parallel close-packed directions in the austenite-martensite interface (habit) plane. It is proposed that, in addition to austenite strengthening, Si enhances reversibility by reducing the volume change and the interfacial atomic mismatch between the martensite and the austenite. Although shape memory is improved, transformation reversibility remains limited by the necessary misfit dislocations that accommodate the atomic spacing differences in the interface.

  3. Detail study of SiC MOSFET switching characteristics

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage...

  4. Additive Manufactured Superconducting Cavities

    Science.gov (United States)

    Holland, Eric; Rosen, Yaniv; Woolleet, Nathan; Materise, Nicholas; Voisin, Thomas; Wang, Morris; Mireles, Jorge; Carosi, Gianpaolo; Dubois, Jonathan

    Superconducting radio frequency cavities provide an ultra-low dissipative environment, which has enabled fundamental investigations in quantum mechanics, materials properties, and the search for new particles in and beyond the standard model. However, resonator designs are constrained by limitations in conventional machining techniques. For example, current through a seam is a limiting factor in performance for many waveguide cavities. Development of highly reproducible methods for metallic parts through additive manufacturing, referred to colloquially as 3D printing\\x9D, opens the possibility for novel cavity designs which cannot be implemented through conventional methods. We present preliminary investigations of superconducting cavities made through a selective laser melting process, which compacts a granular powder via a high-power laser according to a digitally defined geometry. Initial work suggests that assuming a loss model and numerically optimizing a geometry to minimize dissipation results in modest improvements in device performance. Furthermore, a subset of titanium alloys, particularly, a titanium, aluminum, vanadium alloy (Ti - 6Al - 4V) exhibits properties indicative of a high kinetic inductance material. This work is supported by LDRD 16-SI-004.

  5. Effect of LaB6 on the thermal shock property of MoSi2-SiC coating for carbon/carbon composites

    International Nuclear Information System (INIS)

    Li Ting; Li Hejun; Shi Xiaohong

    2013-01-01

    Highlights: ► LaB 6 -MoSi 2 -SiC and MoSi 2 -SiC multi-composition coatings were coated on C/C composites by pack cementation. ► The microstructure and thermal shock resistance of both coatings were investigated. ► The addition of LaB 6 can increase the compactness, flexural strength and fracture toughness of the MoSi 2 -SiC coating simultaneously. ► Both coatings bond well with the substrates before and after thermal cycling oxidation between 1773 K and room temperature. ► The LaB 6 -MoSi 2 -SiC coated C/C shows better thermal shock resistance than the MoSi 2 -SiC coated C/C. - Abstract: LaB 6 -MoSi 2 -SiC and MoSi 2 -SiC coatings were prepared on the surface of carbon/carbon composites by pack cementation method. The crystal structures of the coatings were measured by X-ray diffraction. The morphologies and element distributions were also analyzed by scanning electron microscopy and energy dispersive spectroscopy, respectively. The effect of LaB 6 on the microstructure and thermal shock resistance of MoSi 2 -SiC coating was investigated. The results indicated that the LaB 6 -MoSi 2 -SiC coating possessed a denser structure and superior thermal shock resistance. After 25 times of thermal cycling oxidation between 1773 K and room temperature, the weight losses of the LaB 6 -MoSi 2 -SiC and MoSi 2 -SiC coated samples were 0.627% and 2.019%, respectively.

  6. Metal Additive Manufacturing: A Review of Mechanical Properties

    Science.gov (United States)

    Lewandowski, John J.; Seifi, Mohsen

    2016-07-01

    This article reviews published data on the mechanical properties of additively manufactured metallic materials. The additive manufacturing techniques utilized to generate samples covered in this review include powder bed fusion (e.g., EBM, SLM, DMLS) and directed energy deposition (e.g., LENS, EBF3). Although only a limited number of metallic alloy systems are currently available for additive manufacturing (e.g., Ti-6Al-4V, TiAl, stainless steel, Inconel 625/718, and Al-Si-10Mg), the bulk of the published mechanical properties information has been generated on Ti-6Al-4V. However, summary tables for published mechanical properties and/or key figures are included for each of the alloys listed above, grouped by the additive technique used to generate the data. Published values for mechanical properties obtained from hardness, tension/compression, fracture toughness, fatigue crack growth, and high cycle fatigue are included for as-built, heat-treated, and/or HIP conditions, when available. The effects of test orientation/build direction on properties, when available, are also provided, along with discussion of the potential source(s) (e.g., texture, microstructure changes, defects) of anisotropy in properties. Recommendations for additional work are also provided.

  7. Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system

    International Nuclear Information System (INIS)

    Richardson, C.; Takoudis, C.G.

    1999-01-01

    The thermal, chemical, and physical properties of SiC make it an attractive material for a wide range of applications from wear resistant coatings on tools to high temperature microelectronics operations. A comprehensive thermodynamic analysis has been performed for the Si/H/C/O system from which a priori process-property relationships of the chemical vapor deposition (CVD) of silicon carbide (SiC) are obtained. The parameter space for pure silicon carbide growth is reported for five orders of magnitude of the system water vapor level (1 ppb--100 ppm), four orders of magnitude of system pressure (0.1--760 Torr), and two orders of magnitude of C/Si feed ratio (0.25--20) and H 2 /Si feed ratio (50--10,000). Lower growth temperatures for pure SiC are predicted in clean systems with low system water vapor levels, at stoichiometric to near carbon excess conditions (C/Si ≅ 1 to C/Si > 1), at high carrier gas flow rates (large H 2 /Si feed ratios), and at low operating pressures. Because relative C/Si and H 2 /Si feed ratios have been considered, the predictions in this study are applicable to both multiple and single precursor systems. Further, these results are valid for the CVD of α-SiC as well as β-SiC. Experimental data reported on the growth of α-SiC and β-SiC are found to be in satisfactory agreement with the theoretical predictions, for numerous systems that include multiple and single source, silicon and carbon, species

  8. Microstructure and properties of MoSi2-MoB and MoSi2-Mo5Si3 molybdenum silicides

    International Nuclear Information System (INIS)

    Schneibel, J.H.; Sekhar, J.A.

    2003-01-01

    MoSi 2 -based intermetallics containing different volume fractions of MoB or Mo 5 Si 3 were fabricated by hot-pressing MoSi 2 , MoB, and Mo 5 Si 3 powders in vacuum. Both classes of alloys contained approximately 5 vol.% of dispersed silica phase. Additions of MoB or Mo 5 Si 3 caused the average grain size to decrease. The decrease in the grain size was typically accompanied by an increase in flexure strength, a decrease in the room temperature fracture toughness, and a decrease in the hot strength (compressive creep strength) measured around 1200 deg. C, except when the Mo 5 Si 3 effectively became the major phase. Oxidation measurements on the two classes of alloys were carried out in air. Both classes of alloys were protected from oxidation by an in-situ adherent scale that formed on exposure to high temperature. The scale, although not analyzed in detail, is commonly recognized in MoSi 2 containing materials as consisting mostly of SiO 2 . The MoB containing materials showed an increase in the scale thickness and the cyclic oxidation rate at 1400 deg. C when compared with pure MoSi 2 . However, in contrast with the pure MoSi 2 material, oxidation at 1400 deg. C began with a weight loss followed by a weight gain and the formation of the protective silica layer. The Mo 5 Si 3 containing materials experienced substantial initial weight losses followed by regions of small weight changes. Overall, the MoB and Mo 5 Si 3 additions to MoSi 2 tended to be detrimental for the mechanical and oxidative properties

  9. Alpha-particle irradiation induced defects in SiO2 films of Si-SiO2 structures

    International Nuclear Information System (INIS)

    Koman, B.P.; Gal'chynskyy, O.V.; Kovalyuk, R.O.; Shkol'nyy, A.K.

    1996-01-01

    The aim of the work was to investigate alpha-particle irradiation induced defects in Si-SiO 2 structures by means of the thermostimulated discharge currents (TSDC) analysis. The object of investigation were (p-Si)-SiO 2 structures formed by a combined oxidation of the industrial p-Si wafers in dry and wet oxygen at temperature of 1150 C. The TSD currents were investigated in the temperature range between 90 and 500 K under linear heating rate. Pu 238 isotopes were the source of alpha-particles with an energy of 4-5 MeV and a density of 5.10 7 s -1 cm -2 . The TSD current curves show two peculiar maxima at about 370 and 480 K. Alpha-particle irradiation doesn't affect the general shape of the TSDC curves but leads to a shift of the maximum at 370 K and reduces the total electret charge which is accumulated in the Si-SiO 2 structures during polarization. The energy distribution function of the defects which are involved in SiO 2 polarization has been calculated. It showes that defects with activation energies of about 0.8 and 1.0 eV take part in forming the electret state, and these activation energies have certain energy distributions. It has been found that the TSDC maximum at 370 K has space charge nature and is caused by migration of hydrogen ions. In irradiated samples hydrogen and natrium ions localize on deeper trapping centres induced by alpha-particle irradiation. (orig.)

  10. Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

    Science.gov (United States)

    Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

    2018-02-01

    We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.

  11. Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

    Science.gov (United States)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-11-01

    Silicon carbide (SiC) coatings with varying thickness (ranging from 0.14 μm to 2.67 μm) were deposited onto the surfaces of Type KD-I SiC fibres with native carbonaceous surface using chemical vapour deposition (CVD) process. Then, two dimensional SiC fibre reinforced SiC matrix (2D SiCf/SiC) composites were fabricated using polymer infiltration and pyrolysis (PIP) process. Influences of the fibre coating thickness on mechanical properties of SiC fibre and SiCf/SiC composite were investigated using single-filament test and three-point bending test. The results indicated that flexural strength of the composites initially increased with the increasing CVD SiC coating thickness and reached a peak value of 363 MPa at the coating thickness of 0.34 μm. Further increase in the coating thickness led to a rapid decrease in the flexural strength of the composites. The bending modulus of composites showed a monotonic increase with increasing coating thickness. A chemical attack of hydrogen or other ions (e.g. a C-H group) on the surface of SiC fibres during the coating process, owing to the formation of volatile hydrogen, lead to an increment of the surface defects of the fibres. This was confirmed by Wang et al. [35] in their work on the SiC coating of the carbon fibre. In the present study, the existing ˜30 nm carbon on the surface of KD-I fibre [36] made the fibre easy to be attacked. Deposition of non-stoichiometric SiC, causing a decrease in strength. During the CVD process, a small amount of free silicon or carbon always existed [35]. The existence of free silicon, either disordered the structure of SiC and formed a new source of cracks or attacked the carbon on fibre surface resulting in properties degeneration of the KD-I fibre. The effect of residual stress. The different thermal expansion coefficient between KD-I SiC fibre and CVD SiC coating, which are 3 × 10-6 K-1 (RT ˜ 1000 °C) and 4.6 × 10-6 K-1 (RT ˜ 1000 °C), respectively, could cause residual stress

  12. Fabrication of highly oriented D0{sub 3}-Fe{sub 3}Si nanocrystals by solid-state dewetting of Si ultrathin layer

    Energy Technology Data Exchange (ETDEWEB)

    Naito, Muneyuki, E-mail: naito22@center.konan-u.ac.jp [Department of Chemistry, Konan University, Okamoto, Higashinada, Kobe, Hyogo 658-8501 (Japan); Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko [Department of Chemistry, Konan University, Okamoto, Higashinada, Kobe, Hyogo 658-8501 (Japan); Nakao, Motoi [Graduate School of Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu, Fukuoka 804-8550 (Japan); Sudoh, Koichi [The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2013-07-31

    In this paper, highly oriented nanocrystals of Fe{sub 3}Si with a D0{sub 3} structure are fabricated on SiO{sub 2} using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO{sub 2} layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe{sub 3}Si nanocrystals with D0{sub 3}, B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe{sub 3}Si nanocrystals with a D0{sub 3} single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0{sub 3}-Fe{sub 3}Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0{sub 3} structure after post-deposition annealing.

  13. Multiscale Engineered Si/SiO x Nanocomposite Electrodes for Lithium-Ion Batteries Using Layer-by-Layer Spray Deposition.

    Science.gov (United States)

    Huang, Chun; Kim, Ayoung; Chung, Dong Jae; Park, Eunjun; Young, Neil P; Jurkschat, Kerstin; Kim, Hansu; Grant, Patrick S

    2018-05-09

    Si-based high-capacity materials have gained much attention as an alternative to graphite in Li-ion battery anodes. Although Si additions to graphite anodes are now commercialized, the fraction of Si that can be usefully exploited is restricted due to its poor cyclability arising from the large volume changes during charge/discharge. Si/SiO x nanocomposites have also shown promising behavior, such as better capacity retention than Si alone because the amorphous SiO x helps to accommodate the volume changes of the Si. Here, we demonstrate a new electrode architecture for further advancing the performance of Si/SiO x nanocomposite anodes using a scalable layer-by-layer atomization spray deposition technique. We show that particulate C interlayers between the current collector and the Si/SiO x layer and between the separator and the Si/SiO x layer improved electrical contact and reduced irreversible pulverization of the Si/SiO x significantly. Overall, the multiscale approach based on microstructuring at the electrode level combined with nanoengineering at the material level improved the capacity, rate capability, and cycling stability compared to that of an anode comprising a random mixture of the same materials.

  14. SI units in radiology

    Energy Technology Data Exchange (ETDEWEB)

    Iyer, P S [Bhabha Atomic Research Centre, Bombay (India). Div. of Radiation Protection

    1978-11-01

    The proposal of the International Commission on Radiation Units and Measurements that the special units of radiation and radioactivity-roentgen, rad, rem and curie-be replaced by the International System (SI) of Units has been accepted by international bodies. This paper reviews the resons for introducing the new units and their features. The relation between the special units and the corresponding SI units is discussed with examples. In spite of anticipated difficulties, the commission recommends a smooth and efficient changeover to the SI units in ten years.

  15. Functional materials - Study of process for CVD SiC/C composite material

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Doo Jin; Wang, Chae Chyun; Lee, Young Jin; Oh, Byung Jun [Yonsei University, Seoul (Korea)

    2000-04-01

    The CVD SiC coating techniques are the one of high functional material manufactures that improve the thermal, wear, oxidization and infiltration resistance of the surface of raw materials and extend the life of material. Silicon carbide films have been grown onto graphite substrates by low pressure chemical vapor deposition using MTS(CH{sub 3}SiCl{sub 3}) as a source precursor and H{sub 2} or N{sub 2} as a diluent gas. The experiments for temperature and diluent gas addition changes were performed. The effect of temperature from 900 deg. C to 1350 deg. C and the alteration of diluent gas species on the growth rate and structure of deposits have been studied. The experimental results showed that the deposition rate increased with increasing deposition temperature irrespective of diluent gases and reactant depletion effect increased especially at H{sub 2} diluent gas ambient. As the diluent gas added, the growth rate decreased parabolically. For N{sub 2} addition, surface morphology of leaf-like structure appeared, and for H{sub 2}, faceted structure at 1350 deg. C. The observed features were involved by crystalline phase of {beta}-SiC and surface composition with different gas ambient. We also compared the experimental results of the effect of partial pressure on the growth rate with the results of theoretical approach based on the Langmuir-Hinshelwood model. C/SiC composites were prepared by isothermal chemical vapor infiltration (ICVI). In order to fabricate the more dense C/SiC composites, a novel process of the in-situ whisker growing and filling during ICVI was devised, which was manipulated by alternating dilute gas species. The denser C/SiC composites were successfully prepared by the novel process comparing with the conventional ICVI process. 64 refs., 36 figs., 5 tabs. (Author)

  16. NIMROD Simulations of the HIT-SI and HIT-SI3 Devices

    Science.gov (United States)

    Morgan, Kyle; Jarboe, Tom; Hossack, Aaron; Chandra, Rian; Everson, Chris

    2017-10-01

    The Helicity Injected Torus with Steady Inductive helicity injection (HIT-SI) experiment uses a set of inductively driven helicity injectors to apply non-axisymmetric current drive on the edge of the plasma, driving an axisymmetric spheromak equilibrium in a central confinement volume. Significant improvements have been made to extended MHD modeling of HIT-SI, with both the resolution of disagreement at high injector frequencies in HIT-SI in addition to successes with the new upgraded HIT-SI3 device. Previous numerical studies of HIT-SI, using a zero-beta eMHD model, focused on operations with a drive frequency of 14.5 kHz, and found reduced agreement with both the magnetic profile and current amplification at higher frequencies (30-70 kHz). HIT-SI3 has three helicity injectors which are able to operate with different mode structures of perturbations through the different relative temporal phasing of the injectors. Simulations that allow for pressure gradients have been performed in the parameter regimes of both devices using the NIMROD code and show improved agreement with experimental results, most notably capturing the observed Shafranov-shift due to increased beta observed at higher finj in HIT-SI and the variety of toroidal perturbation spectra available in HIT-SI3. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Fusion Energy Sciences under Award Number DE-FG02- 96ER54361.

  17. Atomic state and characterization of nitrogen at the SiC/SiO2 interface

    International Nuclear Information System (INIS)

    Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

    2014-01-01

    We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO 2 interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO 2 ). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs

  18. New evaluation method of crack growth in SiC/SiC composites using interface elements

    International Nuclear Information System (INIS)

    Serizawa, H.; Ando, M.; Lewinsohn, C.A.; Murakawa, H.

    2000-01-01

    Crack propagation behavior in SiC/SiC composites was analyzed using a new computer simulation method that included time-dependent interface elements. The simulation method was used to describe the time-dependent crack growth in SiC/SiC composites under four-point bending of single-edge-notched beam bend-bars. Two methods were used to simulate time-dependent crack growth in SiC/SiC composites due to fiber creep. In one method, the creep property was introduced into the interface elements by the general method of finite element method (FEM) analysis. In the second method, a new technique making the best use of the potential function was used to represent crack closure tractions due to creeping fibers. The stage-II slow crack growth of a general creep deformation was simulated by both methods. Additionally, stage-III crack growth and the transition from stage-II to stage-III could be simulated by the new method. The new method has the potential to completely simulate time-dependent crack growth behavior in SiC/SiC composites due to fiber creep

  19. DPAC measurements on 129sup(m)TeSi

    International Nuclear Information System (INIS)

    Kemerink, G.J.; Pleiter, F.; Arendes, A.R.

    1981-01-01

    Using results of DPAC measurements on 129 sup(m)TeSi it is shown that the absorption lines in the Moessbauer spectra obtained with unannealed implanted sources must be ascribed mainly as belonging to a quadrupole split multiplet. (orig.)

  20. A TEM study of strained SiGe/Si and related heteroepitaxial structures

    International Nuclear Information System (INIS)

    Benedetti, Alessandro

    2002-01-01

    The role of SiGe/Si heterostructures and related materials has become increasingly important within the last few decades. In order to increase the scale of integration, however, devices with active elements not larger than few tens of nanometer have been recently introduced. There is, therefore, a strong need for an analytical technique capable of giving information about submicron-sized components. An investigation on a nanometre scale can be performed by the combination of a fully equipped Transmission Electron Microscope (TEM) with a Field Emission Gun (PEG) electron source, which enables one to use a wide range of analytical techniques with an electron probe as small as 0.5 nm. In this work, two different types of SiGe/Si-based devices were investigated. Strained-Si n-channel MOSFETs. The use of Strained-Si n-channel grown on SiGe should improve both carrier mobility and transconductance with respect to conventional MOSFETs. Materials analysed in this work showed an extremely high transconductance but a rather low mobility. In order to relate their microstructural properties to their electrical performance, as well as to improve the device design, a full quantitative and qualitative structural characterisation was performed. SiGe Multiple Quantum Wells (MQW) IR detectors Light detection is achieved by collecting the photogenerated carriers, injected from the SiGe QWs layers into the Si substrate. A key factor is the Ge profile across a single QW, since it governs the band structure and therefore the device performances. Four different TEM techniques were used to determine the Ge distribution across a single well, showing an overall good agreement among the results. The Ge profiles broadening, consistent with data available in literature, was successfully explained and theoretically predicted by the combined effect of Ge segregation and gas dwell times within the reactor. (author)

  1. Preparation and property of β-SiAlON:Eu{sup 2+} luminescent fibers by an electrospinning method combined with carbothermal reduction nitridation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qian, E-mail: qianliu@sunm.shcnc.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Shanghai Institute of Materials Genome, Shanghai 200444 (China); Lu, Qi [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Shanghai Institute of Materials Genome, Shanghai 200444 (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Liu, Guanghui [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Shanghai Institute of Materials Genome, Shanghai 200444 (China); Wei, Qinhua [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Shanghai Institute of Materials Genome, Shanghai 200444 (China); Graduate University of Chinese Academy of Sciences, Beijing 100049 (China)

    2016-01-15

    β-SiAlON:Eu{sup 2+} phosphors synthesis usually requires higher temperatures and higher nitrogen pressure conditions. In the present research, a low temperature technique has been developed to synthesize both β-SiAlON and Eu-doped β-SiAlON fibers by electrospinning combined with carbothermal reduction nitridation (CRN). The carbon sources used as reductant in CRN procedure have been optimized to effectively produce a well-crystallized β-SiAlON phase at lower temperatures of 1370–1500 °C. Additionally, through adding sucrose and covering activated carbon powders on the top of fiber precursor layers, the highly-pure β-SiAlON and β-SiAlON:Eu{sup 2+} fibers could be obtained. The pyrolysis behavior of fiber precursors, crystalline phase, morphology, and UV excited luminescence properties of the produced ceramic fibers were also studied by using TG–DSC measurement, XRD analysis, SEM observation, and spectrometer method. The resultant fibers exhibit a smooth surface and an uniforme morphology with a substantial length. Moreover, the β-SiAlON:Eu{sup 2+} fibers thus prepared show a blue light emission peaked at 470 nm under UV excitation. - Highlights: • Eu{sup 2+} doped b-SiAlON blue luminescent fibers were successfully prepared. • Use of electrospinning with carbothermal reduction nitridation. • Sucrose was utilized as carbon source to effectively form β-SiAlON:Eu{sup 2+}. • Active carbon powders were covered on fiber precursor layers during processing. • Produced fibers own smooth surface and uniform morphology.

  2. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    }20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt

  3. Comparative assessment of 3.3kV/400A SiC MOSFET and Si IGBT power modules

    DEFF Research Database (Denmark)

    Ionita, Claudiu; Nawaz, Muhammad; Ilves, Kalle

    2017-01-01

    In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si ...... the pulse duration was increased to 4 μs, where a short-circuit energy of 9.1 J was obtained. The cause of the failure is the thermal runaway leading to a drain-source short....

  4. Microstructure and Mechanical Property of SiCf/SiC and Cf/SiC Composites

    International Nuclear Information System (INIS)

    Lee, S P; Cho, K S; Lee, H U; Lee, J K; Bae, D S; Byun, J H

    2011-01-01

    The mechanical properties of SiC based composites reinforced with different types of fabrics have been investigated, in conjunction with the detailed analyses of their microstructures. The thermal shock properties of SiC f /SiC composites were also examined. All composites showed a dense morphology in the matrix region. Carbon coated PW-SiC f /SiC composites had a good fracture energy, even if their strength was lower than that of PW-C f /SiC composites. SiC f /SiC composites represented a great reduction of flexural strength at the thermal shock temperature difference of 300 deg. C.

  5. Removal of C and SiC from Si and FeSi during ladle refining and solidification

    Energy Technology Data Exchange (ETDEWEB)

    Klevan, Ole Svein

    1997-12-31

    The utilization of solar energy by means of solar cells requires the Si to be very pure. The purity of Si is important for other applications as well. This thesis mainly studies the total removal of carbon from silicon and ferrosilicon. The decarburization includes removal of SiC particles by stirring and during casting in addition to reduction of dissolved carbon by gas purging. It was found that for three commercial qualities of FeSi75, Refined, Gransil, and Standard lumpy, the refined quality is lowest in carbon, followed by Gransil and Standard. A decarburization model was developed that shows the carbon removal by oxidation of dissolved carbon to be a slow process at atmospheric pressure. Gas stirring experiments have shown that silicon carbide particles are removed by transfer to the ladle wall. The casting method of ferrosilicon has a strong influence on the final total carbon content in the commercial alloy. Shipped refined FeSi contains about 100 ppm total carbon, while the molten alloy contains roughly 200 ppm. The total carbon out of the FeSi-furnace is about 1000 ppm. It is suggested that low values of carbon could be obtained on an industrial scale by injection of silica combined with the use of vacuum. Also, the casting system could be designed to give low carbon in part of the product. 122 refs., 50 figs., 24 tabs.

  6. Phosphorus doping of Si nanocrystals: Interface defects and charge compensation

    International Nuclear Information System (INIS)

    Stegner, A.R.; Pereira, R.N.; Klein, K.; Wiggers, H.; Brandt, M.S.; Stutzmann, M.

    2007-01-01

    Using electron paramagnetic resonance (EPR), Fourier-transform infrared absorption (FTIR) and temperature programmed desorption (TPD), we have investigated the doping of silicon nanocrystals (Si-ncs) and the interaction between intrinsic defects and dopants. Si-ncs were produced in a low-pressure microwave plasma reactor using silane as precursor gas. Phosphorus doping was achieved by addition of phosphine to the precursor gas. The low temperature EPR spectra of all P-doped samples display a line at g=1.998, which is the fingerprint of substitutional P in crystalline silicon for [P]>10 18 cm -3 . In addition, the characteristic hyperfine signature of P in Si is also observed for samples with nominal P doping levels below 10 19 cm -3 . Two more features are observed in our EPR spectra: a broad band located at g=2.0056, due to isotropic Si dangling bonds (Si-dbs), and an axially symmetric powder pattern (g perpendicular =2.0087,g parallel =2.0020) arising from Si-dbs at the interface between the crystalline Si core and a native oxide shell. The formation of this oxide layer and the presence of different H-termination configurations are revealed by FTIR spectroscopy. The density of Si-dbs is reduced in P-doped samples, indicating a sizable compensation of the doping by Si-dbs. This compensation effect was verified by H desorption, which enhances the density of Si-dbs, in combination with TPD and FTIR

  7. Rating of transport and radiation source events. Draft additional guidance for the INES national officers for pilot use and feedback; Echelle de classement des incidents de radioprotection: document d'application du systeme international propose par l'AIEA pour les sources radioactives et les transports

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2004-09-15

    The International Nuclear Event Scale (INES) is a means for promptly communicating to the public in consistent terms the safety significance of any reported event associated with radioactive material and/or radiation and to any event occurring during the transport of radioactive material. As described in the 2001 Edition of the INES User.s Manual, events are classified on the scale at seven levels: the upper levels (4-7) are termed accidents. and the lower levels (1-3) incidents. Events which have no safety significance are classified below scale at Level 0 and termed deviations. An overview of the principles for the rating under INES together with flow charts summarizing the rating process is provided in Appendix I. The 2001 Edition of the INES User.s Manual provides some guidance for the rating of transport and radiation source events. At the technical meeting held in 2002 the INES National Officers requested the IAEA/NEA Secretariat to prepare additional guidance. Progress was reported at the Technical Meeting of the INES National Officers in March 2004 where preparation of this draft additional guidance was requested for pilot use. This note provides additional guidance on the rating of transport and radiation source events. It is for pilot use and feedback and is broadly consistent with the INES User.s Manual. It provides more detailed information and an expanded approach for the rating based on actual exposure of workers and members of the public. It is designed to be used as a self-standing document with limited need for reference to the INES User Manual. (author)

  8. PIE of nuclear grade SiC/SiC flexural coupons irradiated to 10 dpa at LWR temperature

    Energy Technology Data Exchange (ETDEWEB)

    Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-03-01

    Silicon carbide fiber-reinforced SiC matrix (SiC/SiC) composites are being actively investigated for accident-tolerant core structures of light water reactors (LWRs). Owing to the limited number of irradiation studies previously conducted at LWR-coolant temperature, this study examined SiC/SiC composites following neutron irradiation at 230–340°C to 2.0 and 11.8 dpa in the High Flux Isotope Reactor. The investigated materials are chemical vapor infiltrated (CVI) SiC/SiC composites with three different reinforcement fibers. The fiber materials were monolayer pyrolytic carbon (PyC)-coated Hi-NicalonTM Type-S (HNS), TyrannoTM SA3 (SA3), and SCS-UltraTM (SCS) SiC fibers. The irradiation resistance of these composites was investigated based on flexural behavior, dynamic Young’s modulus, swelling, and microstructures. There was no notable mechanical properties degradation of the irradiated HNS and SA3 SiC/SiC composites except for reduction of the Young’s moduli by up to 18%. The microstructural stability of these composites supported the absence of degradation. In addition, no progressive swelling from 2.0 to 11.8 dpa was confirmed for these composites. On the other hand, the SCS composite showed significant mechanical degradation associated with cracking within the fiber. This study determined that SiC/SiC composites with HNS or SA3 SiC/SiC fibers, a PyC interphase, and a CVI SiC matrix retain their properties beyond the lifetime dose for LWR fuel cladding at the relevant temperature.

  9. Precipitation kinetics of Al-1.12 Mg{sub 2}Si-0.35 Si and Al-1.07 Mg{sub 2}Si-0.33 Cu alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gaber, A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Gaffar, M.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)]. E-mail: mgaafar@aucegypt.edu; Mostafa, M.S. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Zeid, E.F. Abo [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

    2007-02-21

    The kinetics of hardening precipitates of Al-1.12 wt.% Mg{sub 2}Si-0.35 wt.% Si (excess Si) and Al-1.07 wt.% Mg{sub 2}Si-0.33 wt.% Cu (balanced + Cu) alloys have been investigated by means of differential scanning calorimetry and hardness measurements. The excess Si enhances the precipitation kinetics and improves the strength of the material. On the other hand, however addition of Cu assist formation of the Q' phase which positively changed the alloy strength. The high binding energy between vacancies and solute atoms (Si and Mg) enhances the combination of Si, Mg and vacancies to form Si-Mg-vacancy clusters. These clusters act as nucleation sites for GP-zones. The coexistence of the {beta}'- and Q'-precipitates in the balanced + Cu alloy results in a higher peak age hardening compared to the alloy with Si in excess.

  10. The Stellar Imager (SI) project: a deep space UV/Optical Interferometer (UVOI) to observe the Universe at 0.1 milli-arcsec angular resolution

    Science.gov (United States)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2009-04-01

    The Stellar Imager (SI) is a space-based, UV/Optical Interferometer (UVOI) designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and of the Universe in general. It will also probe via asteroseismology flows and structures in stellar interiors. SI’s science focuses on the role of magnetism in the Universe and will revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes, such as accretion, in the Universe. The ultra-sharp images of SI will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI is a “Flagship and Landmark Discovery Mission” in the 2005 Heliophysics Roadmap and a potential implementation of the UVOI in the 2006 Science Program for NASA’s Astronomy and Physics Division. We present here the science goals of the SI Mission, a mission architecture that could meet those goals, and the technology development needed to enable this mission. Additional information on SI can be found at: http://hires.gsfc.nasa.gov/si/

  11. Selective epitaxial growth properties and strain characterization of Si1- x Ge x in SiO2 trench arrays

    Science.gov (United States)

    Koo, Sangmo; Jang, Hyunchul; Ko, Dae-Hong

    2017-04-01

    In this study, we investigated the formation of a Si1- x Ge x fin structure in SiO2 trench arrays via an ultra-high-vacuum chemical-vapor deposition (UHV-CVD) selective epitaxial growth (SEG) process. Defect generation and microstructures of Si1- x Ge x fin structures with different Ge concentrations ( x = 0.2, 0.3 and 0.45) were examined. In addition, the strain evolution of a Si1- x Ge x fin structure was analyzed by using reciprocal space mapping (RSM). An (111) facet was formed from the Si1- x Ge x epi-layer and SiO2 trench wall interface to minimize the interface and the surface energy. The Si1- x Ge x fin structures were fully relaxed along the direction perpendicular to the trenches regardless of the Ge concentration. On the other hand, the fin structures were fully or partially strained along the direction parallel to the trenches depending on the Ge concentration: fully strained Si0.8Ge0.2 and Si0.7Ge0.3, and a Si0.55Ge0.45 strain-relaxed buffer. We further confirmed that the strain on the Si1- x Ge x fin structures remained stable after oxide removal and H2/N2 post-annealing.

  12. Effect of strontium on liquid structure of Al-Si hypoeutectic alloys using high-energy X-ray diffraction

    International Nuclear Information System (INIS)

    Srirangam, P.; Kramer, M.J.; Shankar, S.

    2011-01-01

    High-energy X-ray diffraction experiments were performed using a synchrotron beam source to investigate the effect of strontium on the liquid atomic structure of Al-Si hypoeutectic alloys. The high-temperature liquid diffraction experiments were carried out on Al alloys with 3, 7, 10 and 12.5 (eutectic) wt.% Si, respectively, with 0 and 0.04 wt.% addition of Sr to each of the alloys. Further, the diffraction data for all the alloys were obtained at various melt temperatures (5-220 K) above the respective liquidus temperature. It was observed that the addition of 0.04 wt.% Sr results in significant change in the liquid structure parameters, such as structure factor, pair distribution function, radial distribution function, coordination number and packing density, at any given melt temperature of the alloy. Salient observations were that, for any specific alloy and temperature, addition of Sr significantly decreases coordination number and packing density. Further, with the addition of Sr in the liquid alloy, the atomic coordination number and packing density increases with decreasing temperature and decreasing Si content of the alloy. The results coupled with prior knowledge have enabled an in-depth understanding of the nucleation environment of the solidifying phases, specifically the role of Sr in delaying the clustering tendencies (nucleation) of the eutectic Si phase.

  13. A new technique to modify hypereutectic Al-24%Si alloys by a Si-P master alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yaping; Wang Shujun; Li Hui [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, 73 Jingshi Road, Jinan 250061 (China); Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, 73 Jingshi Road, Jinan 250061 (China)], E-mail: xfliu@sdu.edu.cn

    2009-05-27

    The modification effect of a Si-P master alloy on Al-24%Si alloy was investigated by using electron probe micro-analyzer (EPMA) and optical microscopy (OM). The dissolution problem of the Si-P master alloys was solved by changing the sequence of addition. When the Si-P master alloy was added into Al melt before the addition of silicon, the best modification effect could be achieved. The modification parameters of the master alloy on Al-24%Si alloy were optimized through designing and analyzing the orthogonal experiment, and their influences on the modification effect were discussed. The results show that the influence of temperature on the modification effect is the greatest, followed by the addition level, and the holding time is the least. The optimized modification parameters are the modification temperature of 810 deg. C, the addition level of 0.35 wt.%, the holding time of 30 min + 50 min whose meaning is that the Si-P master alloy is added firstly to the molten Al, and silicon is added 30 min later, then holding another 50 min. In addition, the modification mechanism of the Si-P master alloy on Al-24%Si alloy was also discussed.

  14. Effect of oxygen on the processes of ion beam synthesis of buried SiC layers in silicon

    International Nuclear Information System (INIS)

    Artamonov, V.V.; Valakh, M.Ya.; Klyuj, N.I.; Mel'nik, V.P.; Romanyuk, A.B.; Romanyuk, B.N.; Yukhimchuk, V.A.

    1998-01-01

    The properties of Si-structures with buried silicon carbide (SiC) layers created by high dose carbon implantation into Cz-Si or Fz-Si wafers followed by high-temperature annealing were studied by Raman and infrared spectroscopy. Effect of additional oxygen implantation on the peculiarities of SiC layer formation was also studied. It was shown that under the same implantation and post-implantation annealing conditions the buried SiC layers are more effectively formed in Cz-Si or in Si subjected to additional oxygen implantation. Thus, oxygen in silicon promotes the SiC layer formation due to SiO x precipitate creation and accommodation of the crystal volume in the region where SiC phase is formed

  15. Mo-Si-B-Based Coatings for Ceramic Base Substrates

    Science.gov (United States)

    Perepezko, John Harry (Inventor); Sakidja, Ridwan (Inventor); Ritt, Patrick (Inventor)

    2015-01-01

    Alumina-containing coatings based on molybdenum (Mo), silicon (Si), and boron (B) ("MoSiB coatings") that form protective, oxidation-resistant scales on ceramic substrate at high temperatures are provided. The protective scales comprise an aluminoborosilicate glass, and may additionally contain molybdenum. Two-stage deposition methods for forming the coatings are also provided.

  16. Challenges in Switching SiC MOSFET without Ringing

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanis...

  17. Physical studies of strained Si/SiGe heterostructures. From virtual substrates to nanodevices

    Energy Technology Data Exchange (ETDEWEB)

    Minamisawa, Renato Amaral

    2011-10-21

    During the past two decades, the decrease in intrinsic delay of MOSFETs has been driven by the scaling of the device dimensions. The performance improvement has relied mostly in the increase of source velocity with gate scaling, while the transport properties of the channel have remained constant, i.e., those of conventional Si. Starting at the 90 nm node, uniaxial strain has been introduced in the transistor channel in order to further increase the source velocity. Beyond the 32 nm node, novel channel materials, with superior carrier velocities, and novel device architectures are required in order to continue the performance enhancement of MOSFETs while preserving the electrostatic control. In this Thesis, different physical aspects of strained Si and SiGe materials are investigated as a mean to increase carrier velocity in MOSFET channels. Novel approaches for the fabrication of strained Si based on ion implantation and anneal induced relaxation of virtual substrates are developed. The strain relaxation of SiGe layers is improved using a buried thin Si:C layer in the Si(100) substrate. Further, a Si{sup +} ion implantation and annealing method is investigated for relaxing virtual substrates using lower implantation dose. Finally, the uniaxial relaxation of {l_brace}110{r_brace} surface oriented substrates is demonstrated using a He ion implantation and anneal technique. Apart of channel material studies, the fundamental and technological challenges involved in the integration of strained Si and SiGe into MOSFETs are assessed. The impact of source and drain formation on the elastic strain and electrical properties of strained Si layers and nanowires is examined. Also, the formation of ultra-shallow junction in strained Si/strained Si{sub 0.5}Ge{sub 0.5}/SSOI heterostructures is investigated using different types of ion implanted specie and annealing. The results show that BF{sup +}{sub 2} implantation and low temperature annealing are suitable approaches for

  18. Effect of surface irradiation during the photo-CVD deposition of a-Si:H thin films. Hikari CVD ho ni yoru amorphous silicon sakuseiji no kiban hikari reiki koka

    Energy Technology Data Exchange (ETDEWEB)

    Tasaka, K.; Doering, H.; Hashimoto, K.; Fujishima, A. (The University of Tokyo, Tokyo (Japan))

    1990-12-06

    This paper shows the impact of the irradiation from an additional light source during the deposition of hydrogenated amorphous silicon by photo-CVD deposition. Using a mercury sensitized photo-CVD process from Disilan (Si {sub 2} H {sub 6}) and hydrogen, silicon was deposited. A 40W low pressure mercury lamp was applied as the light source. A portion of the substrate was in addition irradiated using an Xg-He lamp through a thermal filter. Irradiation of the substrate using only Xg-He lamp produced no deposition, since this light has a wavelength which is too long to produce the SiH {sub 3}-radicals needed for Si deposition. The additional Xg-He light source was discovered to cause an increased thickness of deposited a-Si:H film and a transmission of the band structure. The reasons of these are considered that the influence of irradiation is not limited to film thickness, but that irradiation also impacts the composition of the a-Si:H film so as to cause a reduction in the hydrogen content. 10 figs., 1 tab.

  19. Interfacial characterization of CVI-SiC/SiC composites

    International Nuclear Information System (INIS)

    Yang, W.; Kohyama, A.; Noda, T.; Katoh, Y.; Hinoki, T.; Araki, H.; Yu, J.

    2002-01-01

    The mechanical properties of the interfaces of two families of chemical vapor infiltration SiC/SiC composites, advanced Tyranno-SA and Hi-Nicalon fibers reinforced SiC/SiC composites with various carbon and SiC/C interlayers, were investigated by single fiber push-out/push-back tests. Interfacial debonding and fibers sliding mainly occurred adjacent to the first carbon layer on the fibers. The interfacial debonding strengths and frictional stresses for both Tyranno-SA/SiC and Hi-Nicalon/SiC composites were correlated with the first carbon layer thickness. Tyranno-SA/SiC composites exhibited much larger interfacial frictional stresses compared to Hi-Nicalon/SiC composites. This was assumed to be mainly contributed by the rather rough surface of the Tyranno-SA fiber

  20. Sub-barrier fusion of Si+Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

    2017-11-01

    The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  1. Sub-barrier fusion of Si+Si systems

    Directory of Open Access Journals (Sweden)

    Colucci G.

    2017-01-01

    Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  2. Characterization of SiC in DLC/a-Si films prepared by pulsed filtered cathodic arc using Raman spectroscopy and XPS

    International Nuclear Information System (INIS)

    Srisang, C.; Asanithi, P.; Siangchaew, K.; Pokaipisit, A.; Limsuwan, P.

    2012-01-01

    DLC/a-Si films were deposited on germanium substrates. a-Si film was initially deposited as a seed layer on the substrate using DC magnetron sputtering. DLC film was then deposited on the a-Si layer via a pulsed filtered cathodic arc (PFCA) system. In situ ellipsometry was used to monitor the thicknesses of the growth films, allowing a precise control over the a-Si and DLC thicknesses of 6 and 9 nm, respectively. It was found that carbon atoms implanting on a-Si layer act not only as a carbon source for DLC formation, but also as a source for SiC formation. The Raman peak positions at 796 cm -1 and 972 cm -1 corresponded to the LO and TO phonon modes of SiC, respectively, were observed. The results were also confirmed using TEM, XPS binding energy and XPS depth profile analysis.

  3. The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

    International Nuclear Information System (INIS)

    Chang Jian-Guang; Wu Chun-Bo; Ji Xiao-Li; Ma Hao-Wen; Yan Feng; Shi Yi; Zhang Rong

    2012-01-01

    We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process. It is found that with the conventional Ni silicide method, the leakage current of a p + (SiGe)—n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film. In addition, the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film. As a result, the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology. (cross-disciplinary physics and related areas of science and technology)

  4. Microstructure of as-fabricated UMo/Al(Si) plates prepared with ground and atomized powder

    Science.gov (United States)

    Jungwirth, R.; Palancher, H.; Bonnin, A.; Bertrand-Drira, C.; Borca, C.; Honkimäki, V.; Jarousse, C.; Stepnik, B.; Park, S.-H.; Iltis, X.; Schmahl, W. W.; Petry, W.

    2013-07-01

    UMo-Al based fuel plates prepared with ground U8wt%Mo, ground U8wt%MoX (X = 1 wt%Pt, 1 wt%Ti, 1.5 wt%Nb or 3 wt%Nb) and atomized U7wt%Mo have been examined. The first finding is that that during the fuel plate production the metastable γ-UMo phases partly decomposed into two different γ-UMo phases, U2Mo and α'-U in ground powder or α″-U in atomized powder. Alloying small amounts of a third element to the UMo had no measurable effect on the stability of the γ-UMo phase. Second, the addition of some Si inside the Al matrix and the presence of oxide layers in ground and atomized samples is studied. In the case with at least 2 wt%Si inside the matrix a Silicon rich layer (SiRL) forms at the interface between the UMo and the Al during the fuel plate production. The SiRL forms more easily when an Al-Si alloy matrix - which is characterized by Si precipitates with a diameter ⩽1 μm - is used than when an Al-Si mixed powder matrix - which is characterized by Si particles with some μm diameter - is used. The presence of an oxide layer on the surface of the UMo particles hinders the formation of the SiRL. Addition of some Si into the Al matrix [7-11]. Application of a protective barrier at the UMo/Al interface by oxidizing the UMo powder [7,12]. Increase of the Mo content or use of UMo alloys with ternary element addition X (e.g. X = Nb, Ti, Pt) to stabilize the γ-UMo with respect to α-U or to control the UMo-Al interaction layer kinetics [9,12-24]. Use of ground UMo powder instead of atomized UMo powder [10,25] The points 1-3 are to limit the formation of the undesired UMo/Al layer. Especially the addition of Si into the matrix has been suggested [3,7,8,10,11,26,27]. It has been often mentioned that Silicon is efficient in reducing the Uranium-Aluminum diffusion kinetics since Si shows a higher chemical affinity to U than Al to U. Si suppresses the formation of brittle UAl4 which causes a huge swelling during the irradiation. Furthermore it enhances the

  5. Ion irradiation effects on the matrix phase of SiCf/SiC composites prepared by the whisker growing assisted CVI process

    International Nuclear Information System (INIS)

    Park, Kyeong Hwan; Park, Ji Yeon; Kang, Suk Min; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog

    2005-01-01

    SiC f /SiC composites are one of promising candidates for structural material of the next generation energy system such as GFR and fusion reactors. A number of fabrication methods have been studied for obtaining an outstanding SiC f /SiC composite with a high density, high crystallinity and purity. SiC f /SiC composites consisted of whisker-reinforced matrix have a great potential at the viewpoint both of the fabrication process and the mechanical properties. SiC whiskers formed between SiC fibers improve the densification of SiC matrix during CVI process. In addition, the reinforced whiskers would be likely to enhance the mechanical properties of matrix and SiC f /SiC composite. While there has been significant developmental work on manufacturing the SiC f /SiC composite by the whisker growing assisted CVI process, detailed understanding of what effects the complex in the operating conditions combined with realistic materials property data is not adequately understood. Especially, its irradiation effects are even less clear and not well understood. A method of charged-particle irradiation is the most important R and D topics for simulating the core conditions of the advanced nuclear systems. Many studies on radiation effects of SiC and SiC f /SiC composites using a method of ion irradiation have in progress for R and D of the advanced nuclear systems. In this present work, changes of the mechanical property of SiC whisker-reinforced matrix in SiC f /SiC composite were evaluated by means of the depth sensing indentation method before and after chargedparticle irradiation

  6. Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

    Science.gov (United States)

    Ebrahimpour, Omid

    In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the

  7. Soluble salts addition modifies MgO hydration

    International Nuclear Information System (INIS)

    Santos, A.M.; Pandolfelli, V.C.; Salomao, R.

    2012-01-01

    Magnesium oxide (MgO) show great technological interest on refractories due to its high refractoriness, basic slag corrosion resistance and competitive cost. However, the hydration reaction of MgO produces magnesium hydroxide. This reaction generates a significant volumetric expansion that can lead to material breakdown inhibiting its use in refractory castables. This reaction can be affected by several factors such as magnesia source, purity, calcination temperature, pH, CaO/SiO 2 ratio and agitation speed. In the present work, soluble salts (CaCl 2 and MgCl 2 ) were used in MgO aqueous suspensions (caustic and sinter). The results were evaluated by means of techniques of degree of hydration (termogravimetric), Scanning electron microscopy, apparent volumetric expansion and x-ray Diffraction which showed that the degree of hydration was noticeably less to sinter aqueous and the expansive effects were less with the addition of CaCl 2 . (author)

  8. Self-organization of nanocluster δ-layers at ion-beam-mixed Si-SiO2 interfaces

    International Nuclear Information System (INIS)

    Roentzsch, L.

    2003-11-01

    This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of δ-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of ''bottom-up'' structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15 nm thin SiO 2 layer, which is enclosed by a 50 nm poly-Si capping layer and the Si substrate, is irradiated with Si + ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degree unattainable in common processes. A region of SiO x (x 2 matrix at a distance of ∼3 nm from the Si substrate. The physical mechanisms of ion mixing of the two Si-SiO 2 interfaces and subsequent phase separation, which result in the desired sample structure, are elucidated from the viewpoint of computer simulations. In addition, experimental evidence is presented based on various methods, including TEM, RBS, and SIMS. A novel method of Si nanocluster decoration is of particular importance which applies Ge as contrast enhancing element in TEM studies of tiny Si nanoclusters. (orig.)

  9. Dust-Firing of Straw and Additives

    DEFF Research Database (Denmark)

    Wu, Hao; Glarborg, Peter; Frandsen, Flemming

    2011-01-01

    In the present work, the ash chemistry and deposition behavior during straw dust-firing were studied by performing experiments in an entrained flow reactor. The effect of using spent bleaching earth (SBE) as an additive in straw combustion was also investigated by comparing with kaolinite. During...... dust-firing of straw, the large (>∼2.5 μm) fly ash particles generated were primarily molten or partially molten spherical particles rich in K, Si, and Ca, supplemented by Si-rich flake-shaped particles. The smaller fly ash particles (...

  10. Sr-Al-Si co-segregated regions in eutectic Si phase of Sr-modified Al-10Si alloy.

    Science.gov (United States)

    Timpel, M; Wanderka, N; Schlesiger, R; Yamamoto, T; Isheim, D; Schmitz, G; Matsumura, S; Banhart, J

    2013-09-01

    The addition of 200 ppm strontium to an Al-10 wt% Si casting alloy changes the morphology of the eutectic silicon phase from coarse plate-like to fine fibrous networks. In order to clarify this modification mechanism the location of Sr within the eutectic Si phase has been investigated by a combination of high-resolution methods. Whereas three-dimensional atom probe tomography allows us to visualise the distribution of Sr on the atomic scale and to analyse its local enrichment, transmission electron microscopy yields information about the crystallographic nature of segregated regions. Segregations with two kinds of morphologies were found at the intersections of Si twin lamellae: Sr-Al-Si co-segregations of rod-like morphology and Al-rich regions of spherical morphology. Both are responsible for the formation of a high density of multiple twins and promote the anisotropic growth of the eutectic Si phase in specific crystallographic directions during solidification. The experimental findings are related to the previously postulated mechanism of "impurity induced twinning". Copyright © 2012 Elsevier B.V. All rights reserved.

  11. Microstructural and mechanical characterization of Al–Zn–Si nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    García-Villarreal, S. [Centro de Investigación en Materiales Avanzados S.C. Monterrey, 66600, Alianza Nte. 202, Parque PIIT, Apodaca, N.L. (Mexico); Chávez-Valdez, A. [Katcon Institute for Innovation and Technology KIIT, 66629, Alianza Sur 200, Apodaca, N.L. (Mexico); Moreno, K.J. [Instituto Tecnológico de Celaya, Apartado Postal 57, 38010 Celaya, Guanajuato (Mexico); Leyva, C.; Aguilar-Martínez, J.A. [Centro de Investigación en Materiales Avanzados S.C. Monterrey, 66600, Alianza Nte. 202, Parque PIIT, Apodaca, N.L. (Mexico); Hurtado, A. [Centro de Investigación en Materiales Avanzados S.C., 31109, Miguel de Cervantes 120, Chih., Chih. (Mexico); Arizmendi-Morquecho, A., E-mail: ana.arizmendi@cimav.edu.mx [Centro de Investigación en Materiales Avanzados S.C. Monterrey, 66600, Alianza Nte. 202, Parque PIIT, Apodaca, N.L. (Mexico)

    2013-09-15

    In this paper the addition of silicon nanoparticles into Al–Zn alloys to form metallic matrix nanocomposites by mechanical alloying process was investigated. The influence of various process parameters such as milling time and Si concentration in the Al–Zn matrix has an interesting effect on the microstructure and mechanical properties of the synthesized nanocomposites. The microstructural characterization of the nanocomposites was evaluated by transmission electron microscopy and energy dispersive X-ray spectroscopy (TEM–EDXS) and the mechanical properties were measured by nanoindentation and micro-hardness tests. The results showed that during mechanical milling Si is added to the Al–Zn matrix achieving a uniform and homogeneous dispersion. After solidification, it forms small particles of AlZnSi with blocky morphology in interdendritic regions. The nanoindentation profiles showed that the elastic modulus and hardness properties increase with increasing milling time. However, a high concentration of Si (> 1.2 wt.%) results in a saturation of Si in the Al–Zn matrix, which adversely affects the mechanical properties. Thus, it is important to tune the milling time and concentration of Si added to the Al–Zn alloys to control the growth of brittle phases that result in reduction of the mechanical properties of the material. - Highlights: • A novel technique for addition of Si nanocomposites into Al–Zn liquid alloy is reported. • Good dispersion and homogeneity of Si in the Al–Zn matrix are obtained. • Increasing Si content above 1.2 wt.% decreases the mechanical properties of Al–Zn alloy. • The saturation point of Si in 1.2 wt.% differs from Galvalume® composition. • The Al–Zn–1.5Si alloy with addition of nanocomposite shows 5.7 GPa of hardness.

  12. Bulk quadrupole and interface dipole contribution for second harmonic generation in Si(111)

    International Nuclear Information System (INIS)

    Reitböck, Cornelia; Stifter, David; Alejo-Molina, Adalberto; Hingerl, Kurt; Hardhienata, Hendradi

    2016-01-01

    The second harmonic generation (SHG) response was measured for arbitrarily oriented linear input polarization on Si(111) surfaces in rotational anisotropy experiments. We show for the first time, using the simplified bond hyperpolarizability model (SBHM), that the observed angular shifts of the nonlinear peaks and symmetry features—related to changes in the input polarization—help to identify the corresponding interface dipolar and bulk quadrupolar SHG sources, yielding excellent agreement with the experiment. Additionally, we evaluate for the s-in/p-out (sp) and p-in/p-out (pp)-polarization SHG intensities the contributions from the individual Si bonds. Furthermore, a relation between the four parameters arising from SBHM and six coefficients of the phenomenological SHG theory needed to reproduce experimental data is established. (paper)

  13. Microstructure and mechanical properties of Cu-Ni-Si alloys

    International Nuclear Information System (INIS)

    Monzen, Ryoichi; Watanabe, Chihiro

    2008-01-01

    The microstructure and mechanical properties of 0.1 wt.% Mg-added and Mg-free Cu-2.0 wt.% Ni-0.5 wt.% Si alloys aged at 400 deg. C have been examined. The addition of Mg promotes the formation of disk-shaped Ni 2 Si precipitates. The Cu-Ni-Si-Mg alloy exhibits higher strength and resistance to stress relaxation than the Cu-Ni-Si alloy. The higher strength or stress relaxation resistance is attributable to the reduction in inter-precipitate spacing by the Mg addition or the drag effect of Mg atoms on dislocation motion. The Cu-Ni-Si alloy with a large grain size of 150 μm shows higher stress relaxation resistance than the alloy with a small grain size of 10 μm because of a lower density of mobile dislocations in the former alloy

  14. Microstructure and mechanical properties of Cu-Ni-Si alloys

    Energy Technology Data Exchange (ETDEWEB)

    Monzen, Ryoichi [Division of Innovative Technology and Science, Graduate School of Natural Science and Technology, Kanzawa University, Kakuma-machi, Kanazawa 920-1192 (Japan)], E-mail: monzen@t.kanazawa-u.ac.jp; Watanabe, Chihiro [Division of Innovative Technology and Science, Graduate School of Natural Science and Technology, Kanzawa University, Kakuma-machi, Kanazawa 920-1192 (Japan)

    2008-06-15

    The microstructure and mechanical properties of 0.1 wt.% Mg-added and Mg-free Cu-2.0 wt.% Ni-0.5 wt.% Si alloys aged at 400 deg. C have been examined. The addition of Mg promotes the formation of disk-shaped Ni{sub 2}Si precipitates. The Cu-Ni-Si-Mg alloy exhibits higher strength and resistance to stress relaxation than the Cu-Ni-Si alloy. The higher strength or stress relaxation resistance is attributable to the reduction in inter-precipitate spacing by the Mg addition or the drag effect of Mg atoms on dislocation motion. The Cu-Ni-Si alloy with a large grain size of 150 {mu}m shows higher stress relaxation resistance than the alloy with a small grain size of 10 {mu}m because of a lower density of mobile dislocations in the former alloy.

  15. X-ray absorption spectroscopy study on SiC-side interface structure of SiO2–SiC formed by thermal oxidation in dry oxygen

    Science.gov (United States)

    Isomura, Noritake; Kosaka, Satoru; Kataoka, Keita; Watanabe, Yukihiko; Kimoto, Yasuji

    2018-06-01

    Extended X-ray absorption fine structure (EXAFS) spectroscopy is demonstrated to measure the fine atomic structure of SiO2–SiC interfaces. The SiC-side of the interface can be measured by fabricating thin SiO2 films and using SiC-selective EXAFS measurements. Fourier transforms of the oscillations of the EXAFS spectra correspond to radial-structure functions and reveal a new peak of the first nearest neighbor of Si for m-face SiC, which does not appear in measurements of the Si-face. This finding suggests that the m-face interface could include a structure with shorter Si–C distances. Numerical calculations provide additional support for this finding.

  16. SiCloud

    DEFF Research Database (Denmark)

    Jiang, Cathy Y.; Devore, Peter T.S.; Lonappan, Cejo Konuparamban

    2017-01-01

    The silicon photonics industry is projected to be a multibillion dollar industry driven by the growth of data centers. In this work, we present an interactive online tool for silicon photonics. Silicon Photonics Cloud (SiCCloud.org) is an easy to use instructional tool for optical properties...

  17. Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

    Science.gov (United States)

    Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

    2014-09-10

    Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

  18. U-Mo/Al-Si interaction: Influence of Si concentration

    International Nuclear Information System (INIS)

    Allenou, J.; Palancher, H.; Iltis, X.; Cornen, M.; Tougait, O.; Tucoulou, R.; Welcomme, E.; Martin, Ph.; Valot, C.; Charollais, F.; Anselmet, M.C.; Lemoine, P.

    2010-01-01

    Within the framework of the development of low enriched nuclear fuels for research reactors, U-Mo/Al is the most promising option that has however to be optimised. Indeed at the U-Mo/Al interfaces between U-Mo particles and the Al matrix, an interaction layer grows under irradiation inducing an unacceptable fuel swelling. Adding silicon in limited content into the Al matrix has clearly improved the in-pile fuel behaviour. This breakthrough is attributed to an U-Mo/Al-Si protective layer around U-Mo particles appeared during fuel manufacturing. In this work, the evolution of the microstructure and composition of this protective layer with increasing Si concentrations in the Al matrix has been investigated. Conclusions are based on the characterization at the micrometer scale (X-ray diffraction and energy dispersive spectroscopy) of U-Mo7/Al-Si diffusion couples obtained by thermal annealing at 450 deg. C. Two types of interaction layers have been evidenced depending on the Si content in the Al-Si alloy: the threshold value is found at about 5 wt.% but obviously evolves with temperature. It has been shown that for Si concentrations ranging from 2 to 10 wt.%, the U-Mo7/Al-Si interaction is bi-layered and the Si-rich part is located close to the Al-Si for low Si concentrations (below 5 wt.%) and close to the U-Mo for higher Si concentrations. For Si weight fraction in the Al alloy lower than 5 wt.%, the Si-rich sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 , when the other sub-layer (close to U-Mo) is silicon free and made of UAl 3 and U 6 Mo 4 Al 43 . For Si weight concentrations above 5 wt.%, the Si-rich part becomes U 3 (Si, Al) 5 + U(Al, Si) 3 (close to U-Mo) and the other sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 . On the basis of these results and of a literature survey, a scheme is proposed to explain the formation of different types of ILs between U-Mo and Al-Si alloys (i.e. different protective layers).

  19. Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

    1997-01-01

    Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

  20. Gd-Ni-Si system

    International Nuclear Information System (INIS)

    Bodak, O.I.; Shvets, A.F.

    1983-01-01

    By X-ray phase analysis method isothermal cross section of phase diagram of the Gd-Ni-Si system at 870 K is studied. The existence of nine previously known compounds (GdNisub(6.72)Sisub(6.28), GdNi 10 Si 2 , GdNi 5 Si 3 , GdNi 4 Si, GdNi 2 Si 2 , GdNiSi 3 , GdNiSi 2 , Gd 3 Ni 6 Si 2 and GdNiSi) is confirmed and three new compounds (GdNisub(0.2)Sisub(1.8), Gdsub(2)Nisub(1-0.8)Sisub(1-1.2), Gd 5 NiSi 4 ) are found. On the base of Gd 2 Si 3 compound up to 0.15 at. Ni fractions, an interstitial solid solution is formed up to 0.25 at Ni fractions dissolution continues of substitution type. The Gd-Ni-Si system is similar to the Y-Ni-Si system

  1. Function and anatomy of plant siRNA pools derived from hairpin transgenes

    Directory of Open Access Journals (Sweden)

    Lee Kevin AW

    2007-11-01

    Full Text Available Abstract Background RNA interference results in specific gene silencing by small-interfering RNAs (siRNAs. Synthetic siRNAs provide a powerful tool for manipulating gene expression but high cost suggests that novel siRNA production methods are desirable. Strong evolutionary conservation of siRNA structure suggested that siRNAs will retain cross-species function and that transgenic plants expressing heterologous siRNAs might serve as useful siRNA bioreactors. Here we report a detailed evaluation of the above proposition and present evidence regarding structural features of siRNAs extracted from plants. Results Testing the gene silencing capacity of plant-derived siRNAs in mammalian cells proved to be very challenging and required partial siRNA purification and design of a highly sensitive assay. Using the above assay we found that plant-derived siRNAs are ineffective for gene silencing in mammalian cells. Plant-derived siRNAs are almost exclusively double-stranded and most likely comprise a mixture of bona fide siRNAs and aberrant partially complementary duplexes. We also provide indirect evidence that plant-derived siRNAs may contain a hitherto undetected physiological modification, distinct from 3' terminal 2-O-methylation. Conclusion siRNAs produced from plant hairpin transgenes and extracted from plants are ineffective for gene silencing in mammalian cells. Thus our findings establish that a previous claim that transgenic plants offer a cost-effective, scalable and sustainable source of siRNAs is unwarranted. Our results also indicate that the presence of aberrant siRNA duplexes and possibly a plant-specific siRNA modification, compromises the gene silencing capacity of plant-derived siRNAs in mammalian cells.

  2. Hydrogen generation due to water splitting on Si - terminated 4H-Sic(0001) surfaces

    Science.gov (United States)

    Li, Qingfang; Li, Qiqi; Yang, Cuihong; Rao, Weifeng

    2018-02-01

    The chemical reactions of hydrogen gas generation via water splitting on Si-terminated 4H-SiC surfaces with or without C/Si vacancies were studied by using first-principles. We studied the reaction mechanisms of hydrogen generation on the 4H-SiC(0001) surface. Our calculations demonstrate that there are major rearrangements in surface when H2O approaches the SiC(0001) surface. The first H splitting from water can occur with ground-state electronic structures. The second H splitting involves an energy barrier of 0.65 eV. However, the energy barrier for two H atoms desorbing from the Si-face and forming H2 gas is 3.04 eV. In addition, it is found that C and Si vacancies can form easier in SiC(0001)surfaces than in SiC bulk and nanoribbons. The C/Si vacancies introduced can enhance photocatalytic activities. It is easier to split OH on SiC(0001) surface with vacancies compared to the case of clean SiC surface. H2 can form on the 4H-SiC(0001) surface with C and Si vacancies if the energy barriers of 1.02 and 2.28 eV are surmounted, respectively. Therefore, SiC(0001) surface with C vacancy has potential applications in photocatalytic water-splitting.

  3. Strained Si engineering for nanoscale MOSFETs

    International Nuclear Information System (INIS)

    Park, Jea-Gun; Lee, Gon-Sub; Kim, Tae-Hyun; Hong, Seuck-Hoon; Kim, Seong-Je; Song, Jin-Hwan; Shim, Tae-Hun

    2006-01-01

    We have revealed a strain relaxation mechanism for strained Si grown on a relaxed SiGe-on-insulator structure fabricated by the bonding, dislocation sink, or condensation method. Strain relaxation for both the bonding and dislocation sink methods was achieved by grading the Ge concentration; in contrast, the relaxation for the condensation method was achieved through Ge atom condensation during oxidation. In addition, we estimated the surface roughness and threading-dislocation pit density for relaxed SiGe layer fabricated by the bonding, dislocation sink, or condensation method. The surface roughness and threading-dislocation pit density for the bonding, dislocation sink, and condensation methods were 2.45, 0.46, and 0.40 nm and 5.0 x 10 3 , 9 x 10 3 , and 0, respectively. In terms of quality and cost-effectiveness, the condensation method was superior to the bonding and dislocation sink methods for forming strained Si on a relaxed SiGe-on-insulator structure

  4. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  5. Oblique roughness replication in strained SiGe/Si multilayers

    NARCIS (Netherlands)

    Holy, V.; Darhuber, A.A.; Stangl, J.; Bauer, G.; Nützel, J.-F.; Abstreiter, G.

    1998-01-01

    The replication of the interface roughness in SiGe/Si multilayers grown on miscut Si(001) substrates has been studied by means of x-ray reflectivity reciprocal space mapping. The interface profiles were found to be highly correlated and the direction of the maximal replication was inclined with

  6. SiC Seeded Crystal Growth

    Science.gov (United States)

    Glass, R. C.; Henshall, D.; Tsvetkov, V. F.; Carter, C. H., Jr.

    1997-07-01

    The availability of relatively large (30 mm) SiC wafers has been a primary reason for the renewed high level of interest in SiC semiconductor technology. Projections that 75 mm SiC wafers will be available in 2 to 3 years have further peaked this interest. Now both 4H and 6H polytypes are available, however, the micropipe defects that occur to a varying extent in all wafers produced to date are seen by many as preventing the commercialization of many types of SiC devices, especially high current power devices. Most views on micropipe formation are based around Frank's theory of a micropipe being the hollow core of a screw dislocation with a huge Burgers vector (several times the unit cell) and with the diameter of the core having a direct relationship with the magnitude of the Burgers vector. Our results show that there are several mechanisms or combinations of these mechanisms which cause micropipes in SiC boules grown by the seeded sublimation method. Additional considerations such as polytype variations, dislocations and both impurity and diameter control add to the complexity of producing high quality wafers. Recent results at Cree Research, Inc., including wafers with micropipe densities of less than 1 cm - 2 (with 1 cm2 areas void of micropipes), indicate that micropipes will be reduced to a level that makes high current devices viable and that they may be totally eliminated in the next few years. Additionally, efforts towards larger diameter high quality substrates have led to production of 50 mm diameter 4H and 6H wafers for fabrication of LEDs and the demonstration of 75 mm wafers. Low resistivity and semi-insulating electrical properties have also been attained through improved process and impurity control. Although challenges remain, the industry continues to make significant progress towards large volume SiC-based semiconductor fabrication.

  7. Structural, electronic, elastic, and thermodynamic properties of CaSi, Ca2Si, and CaSi2 phases from first-principles calculations

    Science.gov (United States)

    Li, X. D.; Li, K.; Wei, C. H.; Han, W. D.; Zhou, N. G.

    2018-06-01

    The structural, electronic, elastic, and thermodynamic properties of CaSi, Ca2Si, and CaSi2 are systematically investigated by using first-principles calculations method based on density functional theory (DFT). The calculated formation enthalpies and cohesive energies show that CaSi2 possesses the greatest structural stability and CaSi has the strongest alloying ability. The structural stability of the three phases is compared according to electronic structures. Further analysis on electronic structures indicates that the bonding of these phases exhibits the combinations of metallic, covalent, and ionic bonds. The elastic constants are calculated, and the bulk modulus, shear modulus, Young's modulus, Poisson's ratio, and anisotropy factor of polycrystalline materials are deduced. Additionally, the thermodynamic properties were theoretically predicted and discussed.

  8. Fast SiPM Readout of the PANDA TOF Detector

    International Nuclear Information System (INIS)

    Böhm, M.; Lehmann, A.; Motz, S.; Uhlig, F.

    2016-01-01

    For the identification of low momentum charged particles and for event timing purposes a barrel Time-of-Flight (TOF) detector surrounding the interaction point is planned for the PANDA experiment at FAIR . Since the boundary conditions in terms of available radial space and radiation length are quite strict the favored layout is a hodoscope composed of several thousand small scintillating tiles (SciTils) read out by silicon photomultipliers (SiPMs). A time resolution of well below 100 ps is aimed for. With the originally proposed 30 × 30 × 5 mm 3 SciTils read out by two single 3 × 3 mm 2 SiPMs at the rims of the scintillator the targeted time resolution can be just reached, but with a considerable position dependence across the scintillator surface. In this paper we discuss other design options to further improve the time resolution and its homogeneity. It will be shown that wide scintillating rods (SciRods) with a size of, e.g., 50 × 30 × 5 mm 3 or longer and read out at opposite sides by a chain of four serially connected SiPMs a time resolution down to 50 ps can be reached without problems. In addition, the position dependence of the time resolution is negligible. These SciRods were tested in the laboratory with electrons of a 90 Sr source and under real experimental conditions in a particle beam at CERN. The measured time resolutions using fast BC418 or BC420 plastic scintillators wrapped in aluminum foil were consistently between 45 and 75 ps dependent on the SciRod design. This is a significant improvement compared to the original SciTil layout.

  9. Crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses; Li2O-SiO2, Na2O-SiO2, Na2O-CaO-SiO2 kei glass no kessho sekishutsu kyodo

    Energy Technology Data Exchange (ETDEWEB)

    Tsutsumi, K.; Otake, J.; Nagasaka, T.; Hino, M. [Tohoku University, Sendai (Japan)

    1998-06-01

    It has been known that crystallization of mold powder is effective on the disturbance of heat transfer between mold and solidified shell in production of middle carbon steel slabs in continuous casting process. But it has not yet been made clear which composition of mold powder is the most suitable for crystallization. The crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses was observed by differential thermal analysis (DTA) and hot-thermocouple methods with DTA in the present work. As a result, addition of alkaline metal and alkaline earth metal oxides to SiO2 increased the critical cooling rate for glass formation in binary system of Li2O-SiO2 and Na2O-SiO2 and Li2O-SiO2 system crystallized easier than Na2O-SiO2 system. In ternary system of Na2O-CaO-SiO2, addition of Na2O hurried the critical cooling rate at CaO/SiO2=0.93 mass ratio, but the rate was almost constant in the composition range of more than 15 mass% Na2O. The slag of CaO/SiO2=0.93 made the rate faster than the slag of CaO/SiO2=0.47 at constant content of 10mass% Na2O. 17 refs., 10 figs., 3 tabs.

  10. Ab initio chemical kinetics for SiH3 reactions with Si(x)H2x+2 (x = 1-4).

    Science.gov (United States)

    Raghunath, P; Lin, M C

    2010-12-30

    Gas-phase kinetics and mechanisms of SiH(3) reactions with SiH(4), Si(2)H(6), Si(3)H(8), and Si(4)H(10), processes of relevance to a-Si thin-film deposition, have been investigated by ab initio molecular orbital and transition-state theory (TST) calculations. Geometric parameters of all the species involved in the title reactions were optimized by density functional theory at the B3LYP and BH&HLYP levels with the 6-311++G(3df,2p) basis set. The potential energy surface of each reaction was refined at the CCSD(T)/6-311++G(3df,2p) level of theory. The results show that the most favorable low energy pathways in the SiH(3) reactions with these silanes occur by H abstraction, leading to the formation of SiH(4) + Si(x)H(2x+1) (silanyl) radicals. For both Si(3)H(8) and n-Si(4)H(10) reactions, the lowest energy barrier channels take place by secondary Si-H abstraction, yielding SiH(4) + s-Si(3)H(7) and SiH(4) + s-Si(4)H(9), respectively. In the i-Si(4)H(10) reaction, tertiary Si-H abstraction has the lowest barrier producing SiH(4) + t-Si(4)H(9). In addition, direct SiH(3)-for-X substitution reactions forming Si(2)H(6) + X (X = H or silanyls) can also occur, but with significantly higher reaction barriers. A comparison of the SiH(3) reactions with the analogous CH(3) reactions with alkanes has been made. The rate constants for low-energy product channels have been calculated for the temperature range 300-2500 K by TST with Eckart tunneling corrections. These results, together with predicted heats of formation of various silanyl radicals and Si(4)H(10) isomers, have been tabulated for modeling of a-Si:H film growth by chemical vapor deposition.

  11. Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

    International Nuclear Information System (INIS)

    Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

    1990-01-01

    Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

  12. Nonviral pulmonary delivery of siRNA.

    Science.gov (United States)

    Merkel, Olivia M; Kissel, Thomas

    2012-07-17

    RNA interference (RNAi) is an important part of the cell's defenses against viruses and other foreign genes. Moreover, the biotechnological exploitation of RNAi offers therapeutic potential for a range of diseases for which drugs are currently unavailable. Unfortunately, the small interfering RNAs (siRNAs) that are central to RNAi in the cytoplasm are readily degradable by ubiquitous nucleases, are inefficiently targeted to desired organs and cell types, and are excreted quickly upon systemic injection. As a result, local administration techniques have been favored over the past few years, resulting in great success in the treatment of viral infections and other respiratory disorders. Because there are several advantages of pulmonary delivery over systemic administration, two of the four siRNA drugs currently in phase II clinical trials are delivered intranasally or by inhalation. The air-blood barrier, however, has only limited permeability toward large, hydrophilic biopharmaceuticals such as nucleic acids; in addition, the lung imposes intrinsic hurdles to efficient siRNA delivery. Thus, appropriate formulations and delivery devices are very much needed. Although many different formulations have been optimized for in vitro siRNA delivery to lung cells, only a few have been reported successful in vivo. In this Account, we discuss both obstacles to pulmonary siRNA delivery and the success stories that have been achieved thus far. The optimal pulmonary delivery vehicle should be neither cytotoxic nor immunogenic, should protect the payload from degradation by nucleases during the delivery process, and should mediate the intracellular uptake of siRNA. Further requirements include the improvement of the pharmacokinetics and lung distribution profiles of siRNA, the extension of lung retention times (through reduced recognition by macrophages), and the incorporation of reversible or stimuli-responsive binding of siRNA to allow for efficient release of the siRNAs at the

  13. FABRICATION AND MATERIAL ISSUES FOR THE APPLICATION OF SiC COMPOSITES TO LWR FUEL CLADDING

    Directory of Open Access Journals (Sweden)

    WEON-JU KIM

    2013-08-01

    Full Text Available The fabrication methods and requirements of the fiber, interphase, and matrix of nuclear grade SiCf/SiC composites are briefly reviewed. A CVI-processed SiCf/SiC composite with a PyC or (PyC-SiCn interphase utilizing Hi-Nicalon Type S or Tyranno SA3 fiber is currently the best combination in terms of the irradiation performance. We also describe important material issues for the application of SiC composites to LWR fuel cladding. The kinetics of the SiC corrosion under LWR conditions needs to be clarified to confirm the possibility of a burn-up extension and the cost-benefit effect of the SiC composite cladding. In addition, the development of end-plug joining technology and fission products retention capability of the ceramic composite tube would be key challenges for the successful application of SiC composite cladding.

  14. Molecular modeling of alkyl monolayers on the Si (100)-2 x 1 surface

    NARCIS (Netherlands)

    Lee, M.V.; Guo, D.; Linford, M.R.; Zuilhof, H.

    2004-01-01

    Molecular modeling was used to simulate various surfaces derived from the addition of 1-alkenes and 1-alkynes to Si=Si dimers on the Si(100)-2 × 1 surface. The primary aim was to better understand the interactions between adsorbates on the surface and distortions of the underlying silicon crystal

  15. Three-dimensional atomic-image reconstruction from a single-energy Si(100) photoelectron hologram

    International Nuclear Information System (INIS)

    Matsushita, T.; Agui, A.; Yoshigoe, A.

    2004-01-01

    Full text: J. J. Barton proposed a basic algorithm for three-dimensional atomic-image reconstruction from photoelectron hologram, which is based on the Fourier transform(FT). In the use of a single-energy hologram, the twin-image appears in principle. The twin image disappears in the use of multi-energy hologram, which requires longer measuring time and variable-energy light source. But the reconstruction in the use of a simple FT is difficult because the scattered electron wave is not s-symmetric wave. Many theoretical and experimental approaches based on the FT have been researched. We propose a new algorithm so-called 'scattering pattern matrix', which is not based on the FT. The algorithm utilizes the 'scattering pattern', and iterative gradient method. Real space image can be reconstructed from a single-energy hologram without initial model. In addition, the twin image disappears. We reconstructed the three-dimensional atomic image of Si bulk structure from an experimental single-energy hologram of Si(100) 2s emission, which is shown The experiment was performed with using a Al-K α light source. The experimental setup is shown in. Then we calculated a vertical slice image of the reconstructed Si bulk structure, which is shown. The atomic images appear around the expected positions

  16. Recent results from a Si/CdTe semiconductor Compton telescope

    International Nuclear Information System (INIS)

    Tanaka, Takaaki; Watanabe, Shin; Takeda, Shin'ichiro; Oonuki, Kousuke; Mitani, Takefumi; Nakazawa, Kazuhiro; Takashima, Takeshi; Takahashi, Tadayuki; Tajima, Hiroyasu; Sawamoto, Naoyuki; Fukazawa, Yasushi; Nomachi, Masaharu

    2006-01-01

    We are developing a Compton telescope based on high-resolution Si and CdTe detectors for astrophysical observations in sub-MeV/MeV gamma-ray region. Recently, we constructed a prototype Compton telescope which consists of six layers of double-sided Si strip detectors (DSSDs) and CdTe pixel detectors to demonstrate the basic performance of this new technology. By irradiating the detector with gamma rays from radio isotope sources, we have succeeded in Compton reconstruction of images and spectra. The obtained angular resolution is 3.9 o (FWHM) at 511keV, and the energy resolution is 14keV (FWHM) at the same energy. In addition to the conventional Compton reconstruction, i.e., drawing cones in the sky, we also demonstrated a full reconstruction by tracking Compton recoil electrons using the signals detected in successive Si layers. By irradiating 137 Cs source, we successfully obtained an image and a spectrum of 662keV line emission with this method. As a next step, development of larger DSSDs with a size of 4cmx4cm is under way to improve the effective area of the Compton telescope. We are also developing a new low-noise analog ASIC to handle the increasing number of channels. Initial results from these two new technologies are presented in this paper as well

  17. Effects of talc and clay addition on pressureless sintering of porous ...

    Indian Academy of Sciences (India)

    Porous Si3N4 ceramics were successfully synthesized using cheaper talc and clay as sintering additives by pressureless sintering technology and the microstructure and mechanical properties of the ceramics were also investigated. The results indicated that the ceramics consisted of elongated -Si3N4 and small Si2N2O ...

  18. Industrial Wastes as Alternative Mineral Addition in Portland Cement and as Aggregate in Coating Mortars

    OpenAIRE

    Oliveira, Kamilla Almeida; Nazário, Bruna Inácio; Oliveira, Antonio Pedro Novaes de; Hotza, Dachamir; Raupp-Pereira, Fabiano

    2017-01-01

    This paper presents an evaluation study of wastes from pulp and paper as well as construction and demolition industries for application in cement-based materials. The alternative raw materials were used as a source of calcium carbonate (CaCO3) and as pozzolanic material (water-reactive SiO2) in partial replacement of Portland cement. In addition to the hydraulic binder, coating mortars were composed by combining the pulp and paper fluidized bed sand residue with construction and demolition wa...

  19. Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

    1994-01-01

    High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

  20. Application of the Raman technique to measure stress states in individual Si particles in a cast Al-Si alloy

    International Nuclear Information System (INIS)

    Harris, Stephen J.; O'Neill, Ann; Boileau, James; Donlon, William; Su, Xuming; Majumdar, B.S.

    2007-01-01

    While Raman spectroscopy is often used to measure stresses, the analyses are almost always limited to cases with simple stress states (uniaxial, equibiaxial). Recently we provided an experimental methodology to determine the full state of stress in Si wafers. Here we extend that methodology to interrogate stress states in Si particles embedded in an Al-Si alloy. Such determinations will ultimately be valuable for predicting ductility of cast Al, since a primary source of damage is cracking of eutectic Si particles. We combine electron back-scattered diffraction with the frequency shift, polarization and intensity of the Raman light to determine stress states. Stress states are measured both in the as-received residually stressed state and under in situ uniaxial loading. Comparison with finite element calculations shows good agreement. As an application of the technique, we show the determination of strength of an individual Si particle and compare the stress evolution with various models

  1. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  2. Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

    Science.gov (United States)

    Chagarov, Evgueni A.; Kavrik, Mahmut S.; Fang, Ziwei; Tsai, Wilman; Kummel, Andrew C.

    2018-06-01

    Comprehensive Density-Functional Theory (DFT) Molecular Dynamics (MD) simulations were performed to investigate interfaces between a-HfO2 and SiGe or Ge semiconductors with fully-stoichiometric a-SiO2 or sub-oxide SiO interlayers. The electronic structure of the selected stacks was calculated with a HSE06 hybrid functional. Simulations were performed before and after hydrogen passivation of residual interlayer defects. For the SiGe substrate with Ge termination prior to H passivation, the stacks with a-SiO suboxide interlayer (a-HfO2/a-SiO/SiGe) demonstrate superior electronic properties and wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/SiGe). After H passivation, most of the a-HfO2/a-SiO2/SiGe defects are passivated. To investigate effect of random placement of Si and Ge atoms additional simulations with a randomized SiGe slab were performed demonstrating improvement of electronic structure. For Ge substrates, before H passivation, the stacks with a SiO suboxide interlayer (a-HfO2/a-SiO/Ge) also demonstrate wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/Ge). However, even for a-HfO2/a-SiO/Ge, the Fermi level is shifted close to the conduction band edge (CBM) consistent with Fermi level pinning. Again, after H passivation, most of the a-HfO2/a-SiO2/Ge defects are passivated. The stacks with fully coordinated a-SiO2 interlayers have much stronger deformation and irregularity in the semiconductor (SiGe or Ge) upper layers leading to multiple under-coordinated atoms which create band-edge states and decrease the band-gap prior to H passivation.

  3. Study of astrophysically important resonant states in 26Si by the 28Si(4He,6He)26Si reaction

    Science.gov (United States)

    Kwon, Young Kwan; Lee, C. S.; Moon, J. Y.; Lee, J. H.; Kim, J. Y.; Kubono, S.; Iwasa, N.; Inafiki, K.; Yamaguchi, H.; He, J. J.; Saito, A.; Wakabayashi, Y.; Fukijawa, H.; Amadio, G.; Khiem, L. H.; Tanaka, M.; Chen, A.; Kato, S.

    PoS(NIC-IX)024 , b, H. Yamaguchia, J. J. Hea , A. Saitoa , Y. Wakabayashia, H. Fujikawaa, G. The emission of 1.809 MeV gamma-ray from the first excited state of 26 Mg followed by beta- decay of 26 Al in its ground state (denoted as 26 Alg.s. ) has been identified by gamma-ray telescopes such the Compton Gamma-Ray Observatory (CGRO) [1]. To resolve controversy over the pos- sible sources of the observational 1.809 MeV gamma-rays, one needs accurate knowledge of the production rate of 26 Al. The 25 Al(p,γ)26Si reaction which is the competition reaction for produc- tion of 26 Alg.s. is one of the important subjects to be investigated. In this work, the astrophysically important 26 Si states above the proton threshold were studied via the 28 Si(4 He,6 He)26 Si reaction. We have preformed an angular distribution measurement using the high resolution QDD spectro- graph (PA) at Center for Nuclear Study (CNS), University of Tokyo. The experimental results and data analysis will be presented.

  4. Joining of SiC/SiCf ceramic matrix composites for fusion reactor blanket applications

    International Nuclear Information System (INIS)

    Colombo, P.; Riccardi, B.; Donato, A.; Scarinci, G.

    2000-01-01

    Using a preceramic polymer, joints between SiC/SiC f ceramic matrix composites were obtained. The polymer, upon pyrolysis at high temperature, transforms into a ceramic material and develops an adhesive bonding with the composite. The surface morphology of 2D and 3D SiC/SiC f composites did not allow satisfactory results to be obtained by a simple application of the method initially developed for monolithic SiC bodies, which employed the use of a pure silicone resin. Thus, active or inert fillers were mixed with the preceramic polymer, in order to reduce its volumetric shrinkage which occurs during pyrolysis. In particular, the joints realized using the silicone resin with Al-Si powder as reactive additive displayed remarkable shear strength (31.6 MPa maximum). Large standard deviation for the shear strength has nevertheless been measured. The proposed joining method is promising for the realization of fusion reactor blanket structures, even if presently the measured strength values are not fully satisfactory

  5. Effect of Adding Elements on Microstructure of Mg-3Si Alloy

    Directory of Open Access Journals (Sweden)

    CUI Bin

    2017-03-01

    Full Text Available The microstructure of alloy Mg-3Si(mass fraction/%, same as below after successive additions with different elements of Zn, Nd, Gd and Y was observed and the microstructure evolution was investigated by scanning electron microscopy and X-ray diffraction. The results show the primary Mg2Si particles co-exist with eutectic Mg2Si particles in binary alloy Mg-Si. With minor addition of Zn element, only primary Mg2Si can be found in ternary Mg-3Si-3Zn system while eutectic Mg2Si particles disappear. In quaternary alloy Mg-2.0Nd-3.0Zn-3.0Si, the addition of Nd element can effectively refine the primary Mg2Si particles and form some Mg41Nd5 particles. After continuous adding of Gd and Y elements into quaternary system, Gd5Si3 and YSi particles increase significantly in the alloy Mg-8.0Gd-4.0Y-2.0Nd-3.0Zn-3.0Si, while volume fraction of primary Mg2Si decrease significantly. Thermo-Calc calculation predicts that the Gibbs free energy for primary particles Gd5Si3, YSi is lower, and therefore Gd, Y atom and Si are more likely to form compounds. In Mg-8Gd-4Y-2Nd-3Zn-3Si alloy, room temperature Gibbs free energy for primary particles Mg2Si, Gd5Si3, YSi is -9.56×104, -8.72×104, -2.83×104J/mol, respectively, and the mass fraction of these particles is 8.07%, 5.27%, 1.40% respectively.

  6. Marbled texture of sputtered Al/Si alloy thin film on Si

    Energy Technology Data Exchange (ETDEWEB)

    Gentile, M.G. [Physics Department and NIS Interdepartmental Center, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Muñoz-Tabares, J.A.; Chiodoni, A. [Istituto Italiano di Tecnologia, Center for Space Human Robotics, Corso Trento 21, 10129 Torino (Italy); Sgorlon, C. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Para, I. [Department of Applied Science and Technology (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy); Carta, R.; Richieri, G. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Bejtka, K. [Istituto Italiano di Tecnologia, Center for Space Human Robotics, Corso Trento 21, 10129 Torino (Italy); Merlin, L. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Vittone, E. [Physics Department and NIS Interdepartmental Center, University of Torino, via P. Giuria 1, 10125 Torino (Italy)

    2016-08-01

    DC magnetron sputtering is a commonly used technique for the fabrication of silicon based electronic devices, since it provides high deposition rates and uniform large area metallization. However, in addition to the thickness uniformity, coating optical uniformity is a crucial need for semiconductor industrial processes, due to the wide use of optical recognition tools. In the silicon-based technology, aluminum is one of the most used materials for the metal contact. Both the pre-deposition substrate cleaning and the sputtering conditions determine the quality and the crystalline properties of the final Al deposited film. In this paper is shown that not all the mentioned conditions lead to good quality and uniform Al films. In particular, it is shown that under certain standard process conditions, Al/Si alloy (1% Si) metallization on a [100] Si presents a non-uniform reflectivity, with a marbled texture caused by flakes with milky appearance. This optical inhomogeneity is found to be caused by the coexistence of randomly orient Al/Si crystal, with heteroepitaxial Al/Si crystals, both grown on Si substrate. Based on the microstructural analysis, some strategies to mitigate or suppress this marbled texture of the Al thin film are proposed and discussed. - Highlights: • Sputtered Al/Si layers deposited on Si present evident optical non-uniformity • It could be an issue for optical recognition tools used in semiconductor industries • Optical non-uniformity is due to randomly oriented growth of Al grains. • Substrate misorientation and process temperature can mitigate the problem.

  7. The characteristics of photo-CVD SiO{sub 2} and its application on SiC MIS UV photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, C.H.; Chang, C.S.; Chang, S.J.; Su, Y.K.; Chiou, Y.Z.; Liu, S.H.; Huang, B.R

    2003-07-15

    SiO{sub 2} layers were deposited onto SiC by photo-chemical vapor deposition (photo-CVD) using deuterium (D{sub 2}) lamp as the excitation source. For the photo-SiO{sub 2} deposited 500 deg. C, interface state density (D{sub it}) was estimated to be 5.66x10{sup 11} cm{sup -2} eV{sup -1}. With an applied electric field of 4 MV cm{sup -1}, it was found that the leakage current was only 3.15x10{sup -8} A cm{sup -2} for the photo-CVD SiO{sub 2} layer prepared at 500 deg. C. It was also found that photo-SiO{sub 2} could effectively suppress dark current of SiC-based photodetectors (PDs). It was found that we could reduce dark current of SiC-based PDs by about three orders of magnitude by the insertion of a 5 nm-thick photo-CVD SiO{sub 2} film in between Indium-tin-oxide (ITO) contact and the underneath SiC. Photocurrent to dark current ratio of ITO/SiO{sub 2}/SiC MIS PDs was also found to be much larger than that of conventional ITO/SiC Schottky barrier PDs.

  8. Growth of thin SiC films on Si single crystal wafers with a microwave excited plasma of methane gas

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Morgen, Per

    2013-01-01

    Wehave studied the growth and properties of SiC films on Siwafers, under ultrahigh vacuumbackground con- ditions, using a remote-, microwave excited,methane plasma as a source of active carbon and hydrogen,while the Si substrates were held at a temperature of near 700 °C. The reaction is diffusio......Wehave studied the growth and properties of SiC films on Siwafers, under ultrahigh vacuumbackground con- ditions, using a remote-, microwave excited,methane plasma as a source of active carbon and hydrogen,while the Si substrates were held at a temperature of near 700 °C. The reaction...... lowdensity of these, and are otherwise very uniform and poly- crystalline. They are characterized with scanning electron microscopy, atomic force microscopy, X-ray photo- electron spectroscopy, X-ray diffraction, and hardnessmeasurements....

  9. Interfacial mixing in as-deposited Si/Ni/Si layers analyzed by x-ray and polarized neutron reflectometry

    International Nuclear Information System (INIS)

    Bhattacharya, Debarati; Basu, Saibal; Singh, Surendra; Roy, Sumalay; Dev, Bhupendra Nath

    2012-01-01

    Highlights: ► Room temperature diffusion in Si/Ni/Si trilayer detected through complementary x-ray and polarized neutron reflectometry. ► Analyses of XPNR data generated the construction of the layered structure in terms of physical parameters along with alloy layers created by diffusion. ► Scattering length density information from XPNR provided quantitative assessment of the stoichiometry of alloys formed at the Si/Ni and Ni/Si interfaces. - Abstract: Interdiffusion occurring across the interfaces in a Si/Ni/Si layered system during deposition at room temperature was probed using x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Exploiting the complementarity of these techniques, both structural and magnetic characterization with nanometer depth resolution could be achieved. Suitable model fitting of the reflectivity profiles identified the formation of Ni–Si mixed alloy layers at the Si/Ni and Ni/Si interfaces. The physical parameters of the layered structure, including quantitative assessment of the stoichiometry of interfacial alloys, were obtained from the analyses of XRR and PNR patterns. In addition, PNR provided magnetic moment density profile as a function of depth in the stratified medium.

  10. Interfacial mixing in as-deposited Si/Ni/Si layers analyzed by x-ray and polarized neutron reflectometry

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Debarati, E-mail: debarati@barc.gov.in [Solid State Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Basu, Saibal; Singh, Surendra [Solid State Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Roy, Sumalay; Dev, Bhupendra Nath [Department of Materials Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S.C. Mullick Road, Jadavpur, Kolkata 700032 (India)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Room temperature diffusion in Si/Ni/Si trilayer detected through complementary x-ray and polarized neutron reflectometry. Black-Right-Pointing-Pointer Analyses of XPNR data generated the construction of the layered structure in terms of physical parameters along with alloy layers created by diffusion. Black-Right-Pointing-Pointer Scattering length density information from XPNR provided quantitative assessment of the stoichiometry of alloys formed at the Si/Ni and Ni/Si interfaces. - Abstract: Interdiffusion occurring across the interfaces in a Si/Ni/Si layered system during deposition at room temperature was probed using x-ray reflectivity (XRR) and polarized neutron reflectivity (PNR). Exploiting the complementarity of these techniques, both structural and magnetic characterization with nanometer depth resolution could be achieved. Suitable model fitting of the reflectivity profiles identified the formation of Ni-Si mixed alloy layers at the Si/Ni and Ni/Si interfaces. The physical parameters of the layered structure, including quantitative assessment of the stoichiometry of interfacial alloys, were obtained from the analyses of XRR and PNR patterns. In addition, PNR provided magnetic moment density profile as a function of depth in the stratified medium.

  11. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng Lin; Huang, Ming Yi; Wang, Deli; He, Jr-Hau

    2015-01-01

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages

  12. Irradiation effect on Nite-SiC/SiC composites

    International Nuclear Information System (INIS)

    Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

    2007-01-01

    Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

  13. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Rongsheng, E-mail: rschen@ust.hk; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-08-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm{sup 2}/Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10{sup 6}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress.

  14. Les sources de l’histoire du patrimoine cultuel dans la seconde moitié du XXe siècle au Centre national des archives de l’Église de France

    Directory of Open Access Journals (Sweden)

    Bernard Barbiche

    2012-03-01

    Full Text Available Fondé en 1973, installé à Issy-les-Moulineaux, le Centre national des archives de l'Église de France, service de la Conférence des évêques de France, est l'équivalent des Archives nationales pour l'État. Ses fonds datent majoritairement de la seconde moitié du XXe siècle, à quelques exceptions près. Dépôt central des archives de la Conférence épiscopale, le CNAEF reçoit ses archives et celles des comités qui en dépendent, mais aussi des dons divers (archives de mouvements ou de personnalités.Les documents touchant à l'his