Determination of phosphorus in semiconductor grade silicon by neutron activation analysis

International Nuclear Information System (INIS)

Jaskolska, H.; Rowinska, L.

1975-01-01

A method of determination of phosphorus in silicon has been elaborated. The separation of phosphorus is based on the extraction of phosphomolybdic complex in the presence of hold-back carriers of Ta and Au. Contamination factors for various impurities were determined. The lower limit of determination equals 3.10 -11 g P. Types of errors in the determination of concentration profiles are discussed. The method meets the following requirements: 1./ It ensures good separation of phosphorus from elements occuring in silicon plates (i.e. Ta, Au, Sn, Ge, Ce, Sb, As, Cu, and Na). 2./ It ensures high chemical yield of phosphorus separation. 3./ It ensures high efficiency of the measurement of 32 P β-activity. 4./ It is simple and rapid, since, for the determination of a implantation profile, it is necessary to analyse several tens of layers. (T.G.)

Revised activation estimates for silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States); Cheng, E.T.; Mann, F.M.

1996-10-01

Recent progress in nuclear data development for fusion energy systems includes a reevaluation of neutron activation cross sections for silicon and aluminum. Activation calculations using the newly compiled Fusion Evaluated Nuclear Data Library result in calculated levels of {sup 26}Al in irradiated silicon that are about an order of magnitude lower than the earlier calculated values. Thus, according to the latest internationally accepted nuclear data, SiC is much more attractive as a low activation material, even in first wall applications.

Laser process for extended silicon thin film solar cells

International Nuclear Information System (INIS)

Hessmann, M.T.; Kunz, T.; Burkert, I.; Gawehns, N.; Schaefer, L.; Frick, T.; Schmidt, M.; Meidel, B.; Auer, R.; Brabec, C.J.

2011-01-01

We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area.

Energy and exergy analysis of the silicon production process

International Nuclear Information System (INIS)

Takla, M.; Kamfjord, N.E.; Tveit, Halvard; Kjelstrup, S.

2013-01-01

We used energy and exergy analysis to evaluate two industrial and one ideal (theoretical) production process for silicon. The industrial processes were considered in the absence and presence of power production from waste heat in the off-gas. The theoretical process, with pure reactants and no side-reactions, was used to provide a more realistic upper limit of performance for the others. The energy analysis documented the large thermal energy source in the off-gas system, while the exergy analysis documented the potential for efficiency improvement. We found an exergetic efficiency equal to 0.33 ± 0.02 for the process without power production. The value increased to 0.41 ± 0.03 when waste heat was utilized. For the ideal process, we found an exergetic efficiency of 0.51. Utilization of thermal exergy in an off-gas of 800 °C increased this exergetic efficiency to 0.71. Exergy destructed due to combustion of by-product gases and exergy lost with the furnace off-gas were the largest contributors to the thermodynamic inefficiency of all processes. - Highlights: • The exergetic efficiency for an industrial silicon production process when silicon is the only product was estimated to 0.33. • With additional power production from thermal energy in the off-gas we estimated the exergetic efficiency to 0.41. • The theoretical silicon production process is established as the reference case. • Exergy lost with the off-gas and exergy destructed due to combustion account for roughly 75% of the total losses. • With utilization of the thermal exergy in the off-gas at a temperature of 800 °C the exergetic efficiency was 0.71

Mechanical characteristics of microwave sintered silicon carbide

Indian Academy of Sciences (India)

In firing of products by conventionally sintered process, SiC grain gets oxidized producing SiO2 (∼ 32 wt%) and deteriorates the quality of the product substantially. Partially sintered silicon carbide by such a method is a useful material for a varieties of applications ranging from kiln furniture to membrane material.

Production of rare earth-silicon-iron alloys

International Nuclear Information System (INIS)

Mehra, O.K.; Bose, D.K.; Gupta, C.K.

1987-01-01

At Metallurgy Division, BARC, improved procedures for producing rare earth-silicon alloys have been investigated. In these methods, reduction of mixed rare earth oxide by a ferro-silicon and aluminium mixture in combination with CaO-MgO flux/CaO-CaF 2 flux have been tried to prepare an alloy product with a higher rare earth recovery at a higher rare earth content than the present commercial production method. The rare earth recovery using CaO-CaF 2 was 85 per cent while in the case of CaO-MgO flux it was 76 per cent. The corresponding rare earth contents in the alloy correspond to 40 per cent and 55 per cent by weight respectively. (author)

Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

Science.gov (United States)

Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

1978-01-01

Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

Siloxanes in silicone products intended for food contact

DEFF Research Database (Denmark)

Cederberg, Tommy Licht; Jensen, Lisbeth Krüger

oligomers which might migrate to the food when the product is being used. DTU has proposed two action limits for low molecular weight siloxanes in food contact materials. For the sum of cyclic siloxanes D3 to D8 the limits are 12 mg/kg food for adults and 2 mg/kg food for children. For the sum of cyclic...... siloxanes D3 to D13 and linear siloxanes L3-L13 the limit is 60 mg/kg food. In 49 samples of silicone products intended for food contact from the Norwegian markets content of siloxanes has been measured. Coated paper for baking constituted 8 of the samples and in none of those samples siloxanes were found......Silicone is used in food contact materials due to its excellent physical and chemical properties. It is thermostable and flexible and is used in bakeware and kitchen utensils. Silicone is also used to coat paper to make it water and fat resistant. There is no specific regulation in EU which covers...

32Si dating of sediments

International Nuclear Information System (INIS)

Morgenstern, U.

2006-01-01

Useful tools for determining absolute ages of sediments deposited within the last c. 100 years include 210 Pb, 137 Cs, and bomb radiocarbon. Cosmogenic 32 Si, with a half life of c. 140 years, can be applied in the age range 30-1000 years and is ideally suited for this time period. Detection of 32 Si is, however, very difficult due to its extremely low natural specific activity, and the vast excess of stable silicon (i.e. low 32 Si/Si ratio). 23 refs

Electrically active sodium-related defect centres in silicon

DEFF Research Database (Denmark)

Dahl, Espen; Madsbøll, J.; Søiland, A.-K.

2013-01-01

Electrically active defect centres related to sodium in silicon have been examined with deep level transient spectroscopy, and their recombination potential analysed with the microwave photoconductive decay technique. In order to investigate the entire silicon band gap for defect centres, both p-...

Active silicon x-ray for measuring electron temperature

International Nuclear Information System (INIS)

Snider, R.T.

1994-07-01

Silicon diodes are commonly used for x-ray measurements in the soft x-ray region between a few hundred ev and 20 keV. Recent work by Cho has shown that the charge collecting region in an underbiased silicon detector is the depletion depth plus some contribution from a region near the depleted region due to charge-diffusion. The depletion depth can be fully characterized as a function of the applied bias voltage and is roughly proportional to the squart root of the bias voltage. We propose a technique to exploit this effect to use the silicon within the detector as an actively controlled x-ray filter. With reasonable silicon manufacturing methods, a silicon diode detector can be constructed in which the sensitivity of the collected charge to the impinging photon energy spectrum can be changed dynamically in the visible to above the 20 keV range. This type of detector could be used to measure the electron temperature in, for example, a tokamak plasma by sweeping the applied bias voltage during a plasma discharge. The detector samples different parts of the energy spectrum during the bias sweep, and the data collected contains enough information to determine the electron temperature. Benefits and limitations of this technique will be discussed along with comparisons to similar methods for measuring electron temperature and other applications of an active silicon x-ray filter

Large-scale module production for the CMS silicon strip tracker

CERN Document Server

Cattai, A

2005-01-01

The Silicon Strip Tracker (SST) for the CMS experiment at LHC consists of 210 m**2 of silicon strip detectors grouped into four distinct sub-systems. We present a brief description of the CMS Tracker, the industrialised detector module production methods and the current status of the SST with reference to some problems encountered at the factories and in the construction centres.

Design and development of fluidized bed reactor system for production of trichlorosilane as a precursor for high purity silicon

International Nuclear Information System (INIS)

Kumar, Rajesh; Mohan, Sadhana; Bhanja, K.; Nayak, S.; Bhattacharya, S.K.

2009-01-01

Trichlorosilane is widely used as precursor material for production of high purity silicon. It is mainly produced by reaction of metallurgical grade silicon with anhydrous HCl gas in a fluidized bed reactor. To develop this process on commercial scale a pilot size fluidized bed reactor system was designed and developed and successfully operated. This paper discusses the critical issues related to these activities. (author)

BUILDING MATERIALS AND PRODUCTS BASED ON SILICON MANGANESE SLAGS

Directory of Open Access Journals (Sweden)

BOLSHAKOV V. I.

2016-05-01

Full Text Available Raising of problem. Currently of particular relevance was given to the matter of introduction in manufacture of building materials and products, resource-saving techniques and technologies; integrated use of raw materials and materials that prevent or significantly reduce their harmful impact on the environment. This allows you to recycle hundreds of thousands of tons of the fiery liquid slags of silicon manganese and to develop effective structural materials that can replace metals, non-metallic building materials of natural origin, concretes, cast stone, plastics and refractories. Purpose. The study of the structure and properties of building materials and products from electric furnace slag of silicon manganese. Conclusion. Slags from the smelting of silicon manganese are classified as acidic. Their lime factor is in the range of 0.47–0.52. The composition of the slag located in the heterogeneous region SiO2 near the line of separation of cristobalite spread to the crystallization of wollastonite, according to the ternary system MnO-CaO-SiO2, which in consideration of their stability, allows the development of technology of building materials (gravel, sand, granulated slag, etc. and products (foundation blocks, road slabs, containers for transportation and storage of hazardous waste, and others.

Optimization of Fluorescent Silicon Nano material Production Using Peroxide/ Acid/ Salt Technique

International Nuclear Information System (INIS)

Abuhassan, L.H.

2009-01-01

Silicon nano material was prepared using the peroxide/ acid/ salt technique in which an aqueous silicon-based salt solution was added to H 2 O 2 / HF etchants. In order to optimize the experimental conditions for silicon nano material production, the amount of nano material produced was studied as a function of the volume of the silicon salt solution used in the synthesis. A set of samples was prepared using: 0, 5, 10, 15, and 20 ml of an aqueous 1 mg/ L metasilicate solution. The area under the corresponding peaks in the infrared (ir) absorption spectra was used as a qualitative indicator to the amount of the nano material present. The results indicated that using 10 ml of the metasilicate solution produced the highest amount of nano material. Furthermore, the results demonstrated that the peroxide/ acid/ salt technique results in the enhancement of the production yield of silicon nano material at a reduced power demand and with a higher material to void ratio. A model in which the silicon salt forms a secondary source of silicon nano material is proposed. The auxiliary nano material is deposited into the porous network causing an increase in the amount of nano material produced and a reduction in the voids present. Thus a reduction in the resistance of the porous layer, and consequently reduction in the power required, are expected. (author)

Direct Production of Silicones From Sand

Energy Technology Data Exchange (ETDEWEB)

Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

2001-09-30

Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

Electrical activation of phosphorus in silicon

International Nuclear Information System (INIS)

Goh, K.E.J.; Oberbeck, L.; Simmons, M.Y.; Clark, R.G.

2003-01-01

Full text: We present studies of phosphorus δ-doping in silicon with a view to determining the degree of electrical activation of the dopants. These results have a direct consequence for the use of phosphorus as a qubit in a silicon-based quantum computer such as that proposed by Kane. Room temperature and 4 K Hall effect measurements are presented for phosphorus δ-doped layers grown in n-type silicon using two different methods. In the first method, the δ-layer was deposited by a phosphorus effusion cell in an MBE chamber. In the second method, the Si surface was dosed with phosphine gas and then annealed to 550 deg C to incorporate P into the substrate. In both methods, the P δ-doped layer was subsequently encapsulated by ∼25 nm of Si grown epitaxially. We discuss the implications of our results on the fabrication of the Kane quantum computer

Silicon processing for photovoltaics II

CERN Document Server

Khattak, CP

2012-01-01

The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

System-level integration of active silicon photonic biosensors

Science.gov (United States)

Laplatine, L.; Al'Mrayat, O.; Luan, E.; Fang, C.; Rezaiezadeh, S.; Ratner, D. M.; Cheung, K.; Dattner, Y.; Chrostowski, L.

2017-02-01

Biosensors based on silicon photonic integrated circuits have attracted a growing interest in recent years. The use of sub-micron silicon waveguides to propagate near-infrared light allows for the drastic reduction of the optical system size, while increasing its complexity and sensitivity. Using silicon as the propagating medium also leverages the fabrication capabilities of CMOS foundries, which offer low-cost mass production. Researchers have deeply investigated photonic sensor devices, such as ring resonators, interferometers and photonic crystals, but the practical integration of silicon photonic biochips as part of a complete system has received less attention. Herein, we present a practical system-level architecture which can be employed to integrate the aforementioned photonic biosensors. We describe a system based on 1 mm2 dies that integrate germanium photodetectors and a single light coupling device. The die are embedded into a 16x16 mm2 epoxy package to enable microfluidic and electrical integration. First, we demonstrate a simple process to mimic Fan-Out Wafer-level-Packaging, which enables low-cost mass production. We then characterize the photodetectors in the photovoltaic mode, which exhibit high sensitivity at low optical power. Finally, we present a new grating coupler concept to relax the lateral alignment tolerance down to +/- 50 μm at 1-dB (80%) power penalty, which should permit non-experts to use the biochips in a"plug-and-play" style. The system-level integration demonstrated in this study paves the way towards the mass production of low-cost and highly sensitive biosensors, and can facilitate their wide adoption for biomedical and agro-environmental applications.

Electrically active defects in solar grade multicrystalline silicon

DEFF Research Database (Denmark)

Dahl, Espen

2013-01-01

Shortage in high purity silicon feedstock, as a result of the formidable increased demand for solar cell devices during the last two decades, can be mitigated by the introduction of cheaper feedstock of solar grade (So-G) quality. Silicon produced through the metallurgical process route has shown...... the potential to be such a feedstock. However, this feedstock has only few years of active commercial history and the detailed understanding of the nature of structural defects in this material still has fundamental shortcomings. In this thesis the electrical activity of structural defects, commonly associated...

Solar Grade Silicon from Agricultural By-products

Energy Technology Data Exchange (ETDEWEB)

Laine, Richard M

2012-08-20

In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it

Solidification of highly active fission products by a thermite reaction. Pt. 1

International Nuclear Information System (INIS)

Rudolph, G.; Hild, W.

1976-07-01

To solidify high-level fission products a process was developed according to which a high-melting ceramic product is obtained as a solidification matrix in a thermite reaction. With a constant content of fission product oxides reaction mixtures consisting of 35 to 55 wt.% of manganese dioxide, 24 to 32 wt.% of aluminum shot and 17 to 36 wt.% of sand give suitable products. In the thermite reactiom some components contained in the reactic mixture volatilize partly by evaporation (alkali oxides, manganese oxide, and others) and partly by the formation of volatile oxides having lower valencies (silicon and aluminum oxide). The smoke generated can be easily collected in filters made of glass wool fibers. (orig./HR) [de

Compounds from silicones alter enzyme activity in curing barnacle glue and model enzymes.

Science.gov (United States)

Rittschof, Daniel; Orihuela, Beatriz; Harder, Tilmann; Stafslien, Shane; Chisholm, Bret; Dickinson, Gary H

2011-02-17

Attachment strength of fouling organisms on silicone coatings is low. We hypothesized that low attachment strength on silicones is, in part, due to the interaction of surface available components with natural glues. Components could alter curing of glues through bulk changes or specifically through altered enzyme activity. GC-MS analysis of silicone coatings showed surface-available siloxanes when the coatings were gently rubbed with a cotton swab for 15 seconds or given a 30 second rinse with methanol. Mixtures of compounds were found on 2 commercial and 8 model silicone coatings. The hypothesis that silicone components alter glue curing enzymes was tested with curing barnacle glue and with commercial enzymes. In our model, barnacle glue curing involves trypsin-like serine protease(s), which activate enzymes and structural proteins, and a transglutaminase which cross-links glue proteins. Transglutaminase activity was significantly altered upon exposure of curing glue from individual barnacles to silicone eluates. Activity of purified trypsin and, to a greater extent, transglutaminase was significantly altered by relevant concentrations of silicone polymer constituents. Surface-associated silicone compounds can disrupt glue curing and alter enzyme properties. Altered curing of natural glues has potential in fouling management.

Current-voltage characteristics of porous-silicon structures

International Nuclear Information System (INIS)

Diligenti, A.; Nannini, A.; Pennelli, G.; Pieri, F.; Fuso, F.; Allegrini, M.

1996-01-01

I-V DC characteristics have been measured on metal/porous-silicon structures. In particular, the measurements on metal/free-standing porous-silicon film/metal devices confirmed the result, already obtained, that the metal/porous-silicon interface plays a crucial role in the transport of any device. Four-contacts measurements on free-standing layers showed that the current linearly depends on the voltage and that the conduction process is thermally activated, the activation energy depending on the porous silicon film production parameters. Finally, annealing experiments performed in order to improve the conduction of rectifying contacts, are described

Probing the phase composition of silicon films in situ by etch product detection

International Nuclear Information System (INIS)

Dingemans, G.; Donker, M. N. van den; Gordijn, A.; Kessels, W. M. M.; Sanden, M. C. M. van de

2007-01-01

Exploiting the higher etch probability for amorphous silicon relative to crystalline silicon, the transiently evolving phase composition of silicon films in the microcrystalline growth regime was probed in situ by monitoring the etch product (SiH 4 ) gas density during a short H 2 plasma treatment step. Etch product detection took place by the easy-to-implement techniques of optical emission spectroscopy and infrared absorption spectroscopy. The phase composition of the films was probed as a function of the SiH 4 concentration during deposition and as a function of the film thickness. The in situ results were corroborated by Raman spectroscopy and solar cell analysis

Development of a process for high capacity arc heater production of silicon for solar arrays

Science.gov (United States)

Meyer, T. N.

1980-01-01

A high temperature silicon production process using existing electric arc heater technology is discussed. Silicon tetrachloride and a reductant, liquid sodium, were injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction occurred, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon were developed. The desired degree of separation was not achieved. The electrical, control and instrumentation, cooling water, gas, SiCl4, and sodium systems are discussed. The plasma reactor, silicon collection, effluent disposal, the gas burnoff stack, and decontamination and safety are also discussed. Procedure manuals, shakedown testing, data acquisition and analysis, product characterization, disassembly and decontamination, and component evaluation are reviewed.

Quantitative analyses of impurity silicon-carbide (SiC) and high-purity-titanium by neutron activation analyses based on k0-standardization method. Development of irradiation silicon technology in productivity using research reactor (Joint research)

International Nuclear Information System (INIS)

Motohashi, Jun; Takahashi, Hiroyuki; Magome, Hirokatsu; Sasajima, Fumio; Tokunaga, Okihiro; Kawasaki, Kozo; Onizawa, Koji; Isshiki, Masahiko

2009-07-01

JRR-3 and JRR-4 have been providing neutron-transmutation-doped silicon (NTD-Si) by using the silicon NTD process, which is a method to produce a high quality semiconductor. The domestic supply of NTD-Si is insufficient for the demand, and the market of NTD-Si is significantly growing at present. It is very important to increase achieve the production. To fulfill the requirement, we have been investigating a neutron filter, which is made of high-purity-titanium, for uniform doping. Silicon-carbide (SiC) semiconductor doped with NTD technology is considered suitable for high power devices with superior performances to conventional Si-based devices. We are very interested in the SiC as well. This report presents the results obtained after the impurity contents in the high-purity-titanium and SiC were analyzed by neutron activation analyses (NAA) using k 0 -standardization method. There were 6 and 9 impurity elements detected from the high-purity-titanium and SiC, respectively. Among those Sc from the high-purity-titanium and Fe from SiC were comparatively long half life nuclides. From the viewpoint of exposure in handling them, we need to examine the impurity control of materials. (author)

Vapor phase epitaxy of silicon on meso porous silicon for deposition on economical substrate and low cost photovoltaic application

International Nuclear Information System (INIS)

Quoizola, S.

2003-01-01

The silicon is more and more used in the industry. Meanwhile the production cost is a problem to solve to develop the photovoltaic cells production. This thesis presents a new technology based on the use of a meso-porous silicon upper layer,to grow the active silicon layer of 50 μm width. The photovoltaic cell is then realized, the device is removed and placed on a low cost substrate. The silicon substrate of beginning can be used again after cleaning. The first chapter presents the operating and the characteristics of the silicon photovoltaic cell. The second chapter is devoted to the growth technique, the vapor phase epitaxy, and the third chapter to the epitaxy layer. The chapter four deals with the porous silicon and the structure chosen in this study. The chapter five is devoted to the characterization of the epitaxy layer on porous silicon. The photovoltaic cells realized on these layers are presented in the last chapter. (A.L.B.)

Determinations of silicon and phosphorus in rice planted on a district of high incidence of amyotrophic lateral sclerosis by neutron activation and X-ray fluorescence analyses

Energy Technology Data Exchange (ETDEWEB)

Mizumoto, Yoshihiko; Ishikawa, Teruumi; Kusakabe, Toshio; Katsurayama, Kousuke (Kinki Univ., Higashi-Osaka, Osaka (Japan)); Iwata, Shiro

1989-12-01

Silicon and phosphorus contents in polished and unpolished rice planted on a district of high incidence of amyotrophic lateral sclerosis (ALS) have been determined by neutron activation and X-ray fluorescence methods, and compared with those from control areas. In the neutron activation analysis, {beta}-ray spectra of {sup 32}P produced by the {sup 31}P(n, {gamma}){sup 32}P reaction on polished and unpolished rice were measured with a low background {beta}-ray spectrometer. In the X-ray fluorescence analysis, characteristic X-ray were analyzed with a wavelength dispersive X-ray fluorescence spectrometer. Silicon contents in polished and unpolished rice from the ALS area are 42 {mu}g.g{sup -1} and 370 {mu}g.g{sup -1}, respectively, and the corresponding phosphorus contents are 1210 {mu}g.g{sup -1}, and 3370 {mu}g.g{sup -1}, respectively. The data for ALS area are equal to those for the control area within atandard deviation. (author).

Determinations of silicon and phosphorus in rice planted on a district of high incidence of amyotrophic lateral sclerosis by neutron activation and X-ray fluorescence analyses

International Nuclear Information System (INIS)

Mizumoto, Yoshihiko; Ishikawa, Teruumi; Kusakabe, Toshio; Katsurayama, Kousuke; Iwata, Shiro.

1989-01-01

Silicon and phosphorus contents in polished and unpolished rice planted on a district of high incidence of amyotrophic lateral sclerosis (ALS) have been determined by neutron activation and X-ray fluorescence methods, and compared with those from control areas. In the neutron activation analysis, β-ray spectra of 32 P produced by the 31 P(n, γ) 32 P reaction on polished and unpolished rice were measured with a low background β-ray spectrometer. In the X-ray fluorescence analysis, characteristic X-ray were analyzed with a wavelength dispersive X-ray fluorescence spectrometer. Silicon contents in polished and unpolished rice from the ALS area are 42 μg.g -1 and 370 μg.g -1 , respectively, and the corresponding phosphorus contents are 1210 μg.g -1 , and 3370 μg.g -1 , respectively. The data for ALS area are equal to those for the control area within atandard deviation. (author)

Development of processes for the production of solar grade silicon from halides and alkali metals

Science.gov (United States)

Dickson, C. R.; Gould, R. K.

1980-01-01

High temperature reactions of silicon halides with alkali metals for the production of solar grade silicon in volume at low cost were studied. Experiments were performed to evaluate product separation and collection processes, measure heat release parameters for scaling purposes, determine the effects of reactants and/or products on materials of reactor construction, and make preliminary engineering and economic analyses of a scaled-up process.

Dry technologies for the production of crystalline silicon solar cells; Trockentechnologien zur Herstellung von kristallinen Siliziumsolarzellen

Energy Technology Data Exchange (ETDEWEB)

Rentsch, J.

2005-04-15

Within this work, dynamic plasma etching technologies for the industrial production of crystalline silicon solar cells has been investigated. The research activity can be separated into three major steps: the characterisation of the etching behaviour of a newly developed dynamic plasma etching system, the development and analysis of dry etching processes for solar cell production and the determination of the ecological and economical impacts of such a new technology compared to standard up to date technologies. The characterisation of the etching behaviour has been carried out for two different etching sources, a low frequency (110 kHz) and a microwave (2.45 GHz) plasma source. The parameter of interest was the delivered ion energy of each source mainly determining the reachable etch rate. The etch rate turned out to be the main most critical parameter concerning the reachable wafer throughput per hour. Other points of interest in characterisation of the etching system were the material of the transport carriers, the silicon load as well as the process temperatures. The development of different dry etching processes targets the design of a complete dry production process for crystalline silicon solar cells. Therefore etching processes for saw damage removal, texturing, edge isolation as well as etching of dielectric layers have been developed and optimised. The major benefits of a complete dry production process would be the reduction of handling steps in between process steps and therefore offers a large cost reduction potential. For multicrystalline silicon solar cells a cost reduction potential of 5 % compared to a standard wet chemical based reference process could be realized only including the dry etching of a phosphorus silicate glass layer after diffusion. Further reduction potential offers the implementation of a dry texturing process due to a significant efficiency increase. (orig.)

Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

Energy Technology Data Exchange (ETDEWEB)

Karches, Barbara; Hampel, Gabriele; Plonka, Christian; Stieghorst, Christian; Wiehl, Norbert [Mainz Univ. (Germany). Inst. for Nuclear Chemistry; Schoen, Jonas; Krenckel, Patricia; Riepe, Stephan [Fraunhofer Institute for Solar Energy Systems, Freiburg (Germany); Gerstenberg, Heiko [Technische Univ. Muenchen, Garching (Germany). Heinz-Maier-Leibniz Zentrum; Ponsard, Bernard [Belgian Nuclear Research Centre (SCK CEN), Mol (Belgium). BR2 reactor

2017-09-01

In a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations.

Performance tests of developed silicon strip detector by using a 150 GeV electron beam

International Nuclear Information System (INIS)

Hyun, Hyojung; Jung, Sunwoo; Kah, Dongha; Kang, Heedong; Kim, Hongjoo; Park, Hwanbae

2008-01-01

We manufactured and characterized a silicon micro-strip detector to be used in a beam tracker. A silicon detector features a DC-coupled silicon strip sensor with VA1 Prime2 analog readout chips. The silicon strip sensors have been fabricated on 5-in. wafers at Electronics and Telecommunications Research Institute (Daejeon, Korea). The silicon strip sensor is single-sided and has 32 channels with a 1 mm pitch, and its active area is 3.2 by 3.2 cm 2 with 380 μm thickness. The readout electronics consists of VA hybrid, VA Interface, and FlashADC and Control boards. Analog signals from the silicon strip sensor were being processed by the analog readout chips on the VA hybrid board. Analog signals were then changed into digital signals by a 12 bit 25 MHz FlashADC. The digital signals were read out by the Linux-operating PC through the FlashADC-USB2 interface. The DAQ system and analysis programs were written in the framework of ROOT package. The beam test with the silicon detector had been performed at CERN beam facility. We used a 150 GeV electron beam out of the SPS(Super Proton Synchrotron) H2 beam line. We present beam test setup and measurement result of signal-to-noise ratio of each strip channel. (author)

Production of Solar Grade (SoG) Silicon by Refining Liquid Metallurgical Grade (MG) Silicon: Final Report, 19 April 2001; FINAL

International Nuclear Information System (INIS)

Khattack, C. P.; Joyce, D. B.; Schmid, F.

2001-01-01

This report summarizes the results of the developed technology for producing SoG silicon by upgrading MG silicon with a cost goal of$20/kg in large-scale production. A Heat Exchanger Method (HEM) furnace originally designed to produce multicrystalline ingots was modified to refine molten MG silicon feedstock prior to directional solidification. Based on theoretical calculations, simple processing techniques, such as gas blowing through the melt, reaction with moisture, and slagging have been used to remove B from molten MG silicon. The charge size was scaled up from 1 kg to 300 kg in incremental steps and effective refining was achieved. After the refining parameters were established, improvements to increase the impurity reduction rates were emphasized. With this approach, 50 kg of commercially available as-received MG silicon was processed for a refining time of about 13 hours. A half life of and lt;2 hours was achieved, and the B concentration was reduced to 0.3 ppma and P concentration to 10 ppma from the original values of 20 to 60 ppma, and all other impurities to and lt;0.1 ppma. Achieving and lt;1 ppma B by this simple refining technique is a breakthrough towards the goal of achieving low-cost SoG silicon for PV applications. While the P reduction process was being optimized, the successful B reduction process was applied to a category of electronics industry silicon scrap previously unacceptable for PV feedstock use because of its high B content (50-400 ppma). This material after refining showed that its B content was reduced by several orders of magnitude, to(approx)1 ppma (0.4 ohm-cm, or about 5x1016 cm-3). NREL's Silicon Materials Research team grew and wafered small and lt;100 and gt; dislocation-free Czochralski (Cz) crystals from the new feedstock material for diagnostic tests of electrical properties, C and O impurity levels, and PV performance relative to similar crystals grown from EG feedstock and commercial Cz wafers. The PV conversion

A theoretical approach to photosynthetically active radiation silicon sensor

International Nuclear Information System (INIS)

Tamasi, M.J.L.; Martínez Bogado, M.G.

2013-01-01

This paper presents a theoretical approach for the development of low cost radiometers to measure photosynthetically active radiation (PAR). Two alternatives are considered: a) glass optical filters attached to a silicon sensor, and b) dielectric coating on a silicon sensor. The devices proposed are based on radiometers previously developed by the Argentine National Atomic Energy Commission. The objective of this work is to adapt these low cost radiometers to construct reliable instruments for measuring PAR. The transmittance of optical filters and sensor response have been analyzed for different dielectric materials, number of layers deposited, and incidence angles. Uncertainties in thickness of layer deposition were evaluated. - Highlights: • Design of radiometers to measure photosynthetically active radiation • The study has used a filter and a Si sensor to modify spectral response. • Dielectric multilayers on glass and silicon sensor • Spectral response related to different incidence angles, materials and spectra

Evaluation of selected chemical processes for production of low-cost silicon

Science.gov (United States)

Blocher, J. M., Jr.; Browning, M. F.; Wilson, W. J.; Carmichael, D. C.

1976-01-01

Plant construction costs and manufacturing costs were estimated for the production of solar-grade silicon by the reduction of silicon tetrachloride in a fluidized bed of seed particles, and several modifications of the iodide process using either thermal decomposition on heated filaments (rods) or hydrogen reduction in a fluidized bed of seed particles. Energy consumption data for the zinc reduction process and each of the iodide process options are given and all appear to be acceptable from the standpoint of energy pay back. Information is presented on the experimental zinc reduction of SiCl4 and electrolytic recovery of zinc from ZnCl2. All of the experimental work performed thus far has supported the initial assumption as to technical feasibility of producing semiconductor silicon by the zinc reduction or iodide processes proposed. The results of a more thorough thermodynamic evaluation of the iodination of silicon oxide/carbon mixtures are presented which explain apparent inconsistencies in an earlier cursory examination of the system.

Fabrication of heterojunction solar cells by using microcrystalline hydrogenated silicon oxide film as an emitter

International Nuclear Information System (INIS)

Banerjee, Chandan; Sritharathikhun, Jaran; Konagai, Makoto; Yamada, Akira

2008-01-01

Wide gap, highly conducting n-type hydrogenated microcrystalline silicon oxide (μc-SiO : H) films were prepared by very high frequency plasma enhanced chemical vapour deposition at a very low substrate temperature (170 deg. C) as an alternative to amorphous silicon (a-Si : H) for use as an emitter layer of heterojunction solar cells. The optoelectronic properties of n-μc-SiO : H films prepared for the emitter layer are dark conductivity = 0.51 S cm -1 at 20 nm thin film, activation energy = 23 meV and E 04 = 2.3 eV. Czochralski-grown 380 μm thick p-type (1 0 0) oriented polished silicon wafers with a resistivity of 1-10 Ω cm were used for the fabrication of heterojunction solar cells. Photovoltaic parameters of the device were found to be V oc = 620 mV, J sc = 32.1 mA cm -2 , FF = 0.77, η = 15.32% (active area efficiency)

Low energy production processes in manufacturing of silicon solar cells

Science.gov (United States)

Kirkpatrick, A. R.

1976-01-01

Ion implantation and pulsed energy techniques are being combined for fabrication of silicon solar cells totally under vacuum and at room temperature. Simplified sequences allow very short processing times with small process energy consumption. Economic projections for fully automated production are excellent.

Reactor production and separation of no-carrier added 32P for medical applications

International Nuclear Information System (INIS)

Vimalnath, K.V.; Shetty, P.; Rajeswari, A.; Chirayil, V.; Chakraborty, S.; Dash, A.

2014-01-01

Phosphorous-32 is an attractive and widely used therapeutic radionuclide owing to its favorable nuclear characteristics. The major application of 32 P is the treatment option for a distinct subgroup of elderly patients with polycythemia vera and leukemia. The tremendous prospects associated with the use of 32 P along with the challenge of providing 32 P of acceptable specific activity and purity amenable for in vivo therapy, led to development of a 32 P production strategy. The 32 S(n,p) 32 P route of production provide the scope of obtaining high specific activities or no carrier added (NCA) 32 P. In a typical batch of 14 nos. of neutron irradiated Al containers, each containing 18 g of sulphur, were processed. In the quest for an effective separation method to isolate micro gram of 32 P formed during the neutron irradiation of sulphur, the prospect of using distillation under reduced pressure to achieve complete removal of sulfur seemed to be an effective proposition and motivated us to adopt. The experimental parameters that influence the distillation were identified and a careful control has been exercised to ensure complete removal of sulphur from 32 P within reasonable time period. The 32 P remained in the distillation flask was quantitatively collected by leaching with 0.05 N HCl with gentle heating at 80℃ for 3 hours. In the light of the perceived need to remove cationic impurities from the 32 P leachate, it was passed through an ion-exchange chromatography column containing a cation exchange resin (Dowex 50 x 8 H + , 100-200 mesh) wherein all the cationic impurities get trapped and H 3 32 PO 4 solution was collected as effluent. Recognizing the fact that H 3 32 PO 4 produced is to be used for clinical applications, a thorough quality assessment was carried out. Radionuclidic purity was ascertained by a measurement of its half-life. In order to establish the absence of extraneous gamma emitting radionuclide impurities, gamma spectrum of the appropriately

Nanoparticle production in arc generated fireballs of granular silicon powder

Directory of Open Access Journals (Sweden)

Tsuyohito Ito

2012-03-01

Full Text Available Recently we observed buoyant fireballs by arc igniting silicon that drift in air for several seconds and postulated that the low aggregate density was attributed to the formation of a network of nanoparticles that must completely surround the burning silicon core, trapping the heated vapor generated as a result of particle combustion [Ito et al. Phys Rev E 80, 067401 (2009]. In this paper, we describe the capturing of several of these fireballs in flight, and have characterized their nanostructure by high resolution microscopy. The nanoparticle network is found to have an unusually high porosity (> 99%, suggesting that this arc-ignition of silicon can be a novel method of producing ultra-porous silica. While we confirm the presence of a nanoparticle network within the fireballs, the extension of this mechanism to the production of ball lightning during atmospheric lightning strikes in nature is still the subject of ongoing debate.

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon.

Science.gov (United States)

Bandarenka, Hanna V; Girel, Kseniya V; Zavatski, Sergey A; Panarin, Andrei; Terekhov, Sergei N

2018-05-21

The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

Progress in the Development of SERS-Active Substrates Based on Metal-Coated Porous Silicon

Directory of Open Access Journals (Sweden)

Hanna V. Bandarenka

2018-05-01

Full Text Available The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs, and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.

Solubility and diffusion coefficient of oxygen in silicon

International Nuclear Information System (INIS)

Itoh, Yoshiko; Nozaki, Tadashi

1985-01-01

The solubility and diffusion coefficient of oxygen in silicon between 1000 0 C and 1375 0 C were examined by charged particle activation analysis with the 16 O( 3 He,p) 18 F reaction, in which oxygen was activated with an equal probability over the depth of up to 250μm by a specially devised apparatus. Silicon wafers of known histories were heated in oxygen or argon for 12 to 473 hours, and the resultant oxygen depth profiles were determined by the activation, subsequent stepwise etching and 18 F activity measurement. The solubility thus obtained is given as 9.3 x 10 21 exp[-27.6kcal mol -1 /RT] at.cm -3 ; the diffusion coefficient has been found to be approximated as 3.2 exp[-67.1kcal mol -1 /RT] cm 2 s -1 over 1150 0 C, under which the apparent activation energy seems to decrease with decrease of temperature. (author)

Achievement Report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Development of silicon mass-production manufacturing technology for solar cells; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

In order to manufacture silicon for solar cells, development is intended on a technology to manufacture silicon (SOG-Si) for solar cells by means of metallurgical methods using metallic silicon with purity generally available as an interim starting material. The silicon is required of p-type electric conductivity characteristics with specific resistance of 0.5 to 1.5 ohm per cm, to be sufficient even with 6-7N as compared to silicon for semiconductors (11-N), and to be low in cost. While the NEDO fluid bed process and the metallurgical NEDO direct reduction process have been developed based on the technology to manufacture silicon for semiconductors, the basic policy was established to develop a new manufacturing method using commercially available high-purity metallic silicon as an interim starting material, with an objective to achieve cost as low as capable of responding to small-quantity phase production for proliferation purpose. Removal of boron and phosphor has been the main issue in the development, whereas SOG-Si was manufactured in a laboratory scale by combining with the conventional component technologies in fiscal 1991 and 1992. The scale was expanded to 20 kg since fiscal 1993, and a five year plan starting fiscal 1996 was decided to develop the technology for industrial scale. Fiscal 1997 has promoted the development by using the 20-kg scale device, and introduced facilities to develop technology for mass-production scale. (NEDO)

Selective Synthesis of Manganese/Silicon Complexes in Supercritical Water

Directory of Open Access Journals (Sweden)

Jiancheng Wang

2014-01-01

Full Text Available A series of manganese salts (Mn(NO32, MnCl2, MnSO4, and Mn(Ac2 and silicon materials (silica sand, silica sol, and tetraethyl orthosilicate were used to synthesize Mn/Si complexes in supercritical water using a tube reactor. X-ray diffraction (XRD, X-ray photoelectron spectrometer (XPS, transmission electron microscopy (TEM, and scanning electron microscopy (SEM were employed to characterize the structure and morphology of the solid products. It was found that MnO2, Mn2O3, and Mn2SiO4 could be obtained in supercritical water at 673 K in 5 minutes. The roles of both anions of manganese salts and silicon species in the formation of manganese silicon complexes were discussed. The inorganic manganese salt with the oxyacid radical could be easily decomposed to produce MnO2/SiO2 and Mn2O3/SiO2. It is interesting to found that Mn(Ac2 can react with various types of silicon to produce Mn2SiO4. The hydroxyl groups of the SiO2 surface from different silicon sources enhance the reactivity of SiO2.

A new tevchnique for production of amorphous silicon solar cells

International Nuclear Information System (INIS)

Andrade, A.M. de; Pereyra, I.; Sanematsu, M.S.; Corgnier, S.L.L.; Fonseca, F.J.

1984-01-01

It is presented a new technique for the production of amorphous silicon solar cells based on the development of thin films of a-Si in a reactor in which the decomposition of the sylane, induced by capacitively coupled RF, and the film deposition occur in separate chambers. (M.W.O.) [pt

Improvement of silicon direct bonding using surfaces activated by hydrogen plasma treatment

CERN Document Server

Choi, W B; Lee Jae Sik; Sung, M Y

2000-01-01

The plasma surface treatment, using hydrogen gas, of silicon wafers was studied as a pretreatment for silicon direct bonding. Chemical reactions of the hydrogen plasma with the surfaces were used for both surface activation and removal of surface contaminants. Exposure of the silicon wafers to the plasma formed an active oxide layer on the surface. This layer was hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposure time and power. The surface became smoother with shorter plasma exposure time and lower power. In addition, the plasma surface treatment was very efficient in removing the carbon contaminants on the silicon surface. The value of the initial surface energy, as estimated by using the crack propagation method, was 506 mJ/M sup 2 , which was up to about three times higher than the value for the conventional direct bonding method using wet chemical treatments.

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

Science.gov (United States)

Singh, M.; Behrendt, D. R.

1992-01-01

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

Production and test of the LHCf microstrip silicon system

International Nuclear Information System (INIS)

Bonechi, L.; Adriani, O.; Bongi, M.; Castellini, G.; D'Alessandro, R.; Faus, A.; Haguenauer, M.; Itow, Y.; Kasahara, K.; Macina, D.; Mase, T.; Masuda, K.; Matsubara, Y.; Matsumoto, H.; Menjo, H.; Mizuishi, M.; Muraki, Y.; Papini, P.; Perrot, A.L.; Ricciarini, S.

2008-01-01

After a preliminary installation test, successfully performed in 2007, both the detectors of the LHCf experiment are now ready to be installed at the CERN LHC accelerator for the first physics run. A beam test at SPS in September 2007 allowed to verify the performance of the apparata. Production and test of the silicon tracker developed for one of them are shortly discussed in this work.

Development of processes for the production of solar grade silicon from halides and alkali metals, phase 1 and phase 2

Science.gov (United States)

Dickson, C. R.; Gould, R. K.; Felder, W.

1981-01-01

High temperature reactions of silicon halides with alkali metals for the production of solar grade silicon are described. Product separation and collection processes were evaluated, measure heat release parameters for scaling purposes and effects of reactants and/or products on materials of reactor construction were determined, and preliminary engineering and economic analysis of a scaled up process were made. The feasibility of the basic process to make and collect silicon was demonstrated. The jet impaction/separation process was demonstrated to be a purification process. The rate at which gas phase species from silicon particle precursors, the time required for silane decomposition to produce particles, and the competing rate of growth of silicon seed particles injected into a decomposing silane environment were determined. The extent of silane decomposition as a function of residence time, temperature, and pressure was measured by infrared absorption spectroscopy. A simplistic model is presented to explain the growth of silicon in a decomposing silane enviroment.

A 32-channel, 025 mum CMOS ASIC for the readout of the silicon drift detectors of the ALICE experiment

CERN Document Server

Mazza, G; Anghinolfi, F; Martínez, M I; Rivetti, A; Rotondo, F

2004-01-01

In this paper we present a 32 channel ASIC prototype for the readout of the silicon drift detectors (SDDs) of the ALICE experiment. The ASIC integrates on the same substrate 32 transimpedance amplifiers, a 32 x 256 cell analogue memory and 16 successive approximation 10 bit A/D converters. The circuit amplifies and samples at 40 MS/s the input signal in a continuous way. When an external trigger signal validates the acquisition, the sampling is stopped and the data are digitized at lower speed (0.5 MS/s). The chip has been designed and fabricated in a commercial 0.25 mum CMOS technology. It has been extensively tested both on a bench and connected with a detector in several beam tests. In this paper both design issues and test results are presented. The radiation tolerance of the design has been increased by special layout techniques. Total dose irradiation tests are also presented.

Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon

International Nuclear Information System (INIS)

Sun, Chang; Rougieux, Fiacre E.; Macdonald, Daniel

2014-01-01

Injection-dependent lifetime spectroscopy of both n- and p-type, Cr-doped silicon wafers with different doping levels is used to determine the defect parameters of Cr i and CrB pairs, by simultaneously fitting the measured lifetimes with the Shockley-Read-Hall model. A combined analysis of the two defects with the lifetime data measured on both n- and p-type samples enables a significant tightening of the uncertainty ranges of the parameters. The capture cross section ratios k = σ n /σ p of Cr i and CrB are determined as 3.2 (−0.6, +0) and 5.8 (−3.4, +0.6), respectively. Courtesy of a direct experimental comparison of the recombination activity of chromium in n- and p-type silicon, and as also suggested by modelling results, we conclude that chromium has a greater negative impact on carrier lifetimes in p-type silicon than n-type silicon with similar doping levels.

Mass productions of thin film silicon PV modules

International Nuclear Information System (INIS)

Tawada, Y.; Yamagishi, H.; Yamamoto, K.

2003-01-01

Mass production technologies of a-Si single junction and a-Si/poly-Si hybrid modules with stable 8% and 10% efficiency were developed in the Shiga factory of Kaneka Corporation. Kaneka instituted Kaneka Solartech Corporation (KST) as a subsidiary company of 100% shareholder and invested 20 MW production plant in Toyooka City in 1999. There are fully automatic thin film fabrication equipments. KST started the manufacturing amorphous silicon PV modules in 1999 and those of hybrid type PV modules in 2001. The largest size glass substrates used for these modules are 95x98 cm and variable size of modules are being produced by cutting these large area base modules. Recent production yields are higher than 98%. Production technologies of a-Si, thin c-Si and solar cells, performances of modules, applications to the rooftop PV systems will be presented. We estimate the production cost of a-Si solar modules and a-Si/thin c-Si hybrid solar modules. The future business plan of our new type solar modules and our production lines will be discussed. (author)

Nondestructive neutron activation analysis of silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Vandergraaf, T. T.; Wikjord, A. G.

1973-10-15

Instrumentel neutron activation analysis was used to determine trace constituents in silicon carbide. Four commercial powders of different origin, an NBS reference material, and a single crystal were characterized. A total of 36 activation species were identified nondestructively by high resolution gamma spectrometry; quantitative results are given for 12 of the more predominant elements. The limitations of the method for certain elements are discussed. Consideration is given to the depression of the neutron flux by impurities with large neutron absorption cross sections. Radiation fields from the various specimens were estimated assuming all radionuclides have reached their saturation activities. (auth)

Application of neutron transmutation doping method to initially p-type silicon material.

Science.gov (United States)

Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

2009-01-01

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

Reactor neutron activation analysis for aluminium in the presence of phosphorus and silicon

International Nuclear Information System (INIS)

Mizumoto, Yoshihiko; Iwata, Shiro; Sasajima, Kazuhisa; Yoshimasu, Fumio; Yase, Yoshiro.

1984-01-01

Reactor neutron activation analysis for aluminium in samples containing phosphorus and silicon was studied. The experiments were performed by using neumatic tube of the Kyoto University Reactor (KUR). At first, the ratios of the 28 Al activity produced from 27 Al(n, γ) 28 Al reaction by thermal neutrons to that from 31 P(n, α) 28 Al reaction by fast neutrons, and to that from 28 Si(n, p) 28 Al reaction were measured by γ-ray spectrometry. With a ratio of about 5 for the thermal to fast neutron flux of KUR, the ratio of the 28 Al activity from aluminium to that from phosphorus was to be 812 +- 7, and to that from silicon 282 +- 3. Secondly, the contributions of 28 Al activities from phosphorus and silicon and the determination limit of aluminium were calculated for various parameters, such as fast neutron flux, thermal to fast neutron flux ratio, amounts of phosphorus and silicon, etc. Thirdly, on the basis of these results, aluminium contents in spinal cords and brains of amyotrophic lateral sclerosis, Parkinsonism-dementia complex and control cases were determined. (author)

Activity measurement of phosphorus-32 in the presence of pure beta-emitting impurities

CSIR Research Space (South Africa)

Simpson, BRS

2006-01-01

Full Text Available Authors describe the activity measurements undertaken at the CSIR’s National Metrology Laboratory on a solution of the pure beta emitting Radio nuclide phosphorus-32 that formed part of an international key comparison. Depending on the production...

Element depth profiles of porous silicon

International Nuclear Information System (INIS)

Kobzev, A.P.; Nikonov, O.A.; Kulik, M.; Zuk, J.; Krzyzanowska, H.; Ochalski, T.J.

1997-01-01

Element depth profiles of porous silicon were measured on the Van-de-Graaff accelerator in the energy range of 4 He + ions from 2 to 3.2 MeV. Application of complementary RBS, ERD and 16 O(α,α) 16 O nuclear reaction methods permits us to obtain: 1) the exact silicon, oxygen and hydrogen distribution in the samples, 2) the distribution of partial pore concentrations. The oxygen concentration in porous silicon reaches 30%, which allows one to assume the presence of silicon oxide in the pores and to explain the spectrum shift of luminescence into the blue area

High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

International Nuclear Information System (INIS)

McNallan, M.

1993-01-01

Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

Elite silicon and solar power

International Nuclear Information System (INIS)

Yasamanov, N.A.

2000-01-01

The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

A 32-channels, 025 mu m CMOS ASIC for the readout of the Silicon Drift Detectors of the ALICE experiment

CERN Document Server

Mazza, G; Anelli, G; Anghinolfi, F; Martínez, M I; Rotondo, F

2004-01-01

In this paper we present a 32 channel ASIC prototype for the readout of the Silicon Drift Detectors (SDDs) of the ALICE experiment. The ASIC integrates on the same chip 32 transimpedance amplifiers, a 32*256 cells analogue memory and 16 successive approximation 10 bit A /D converters. The circuit amplifies and samples at 40 MS/s the input signal in a continuous way; when an external trigger signal validates the acquisition, the sampling is stopped and the data are digitized at lower speed (0.5 MS/s). The chip has been designed and fabricated in a commercial. 0.25 mu m CMOS technology. It has been extensively tested both on a bench and connected with the detector in several beam tests. In this paper both design issues and test results are presented. The commercial technology used for the design has been yield radiation tolerant with special layout techniques. Total dose irradiation tests are also presented. (13 refs).

Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

Science.gov (United States)

Vertes, Akos; Walker, Bennett N.

2013-09-10

The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

International Nuclear Information System (INIS)

Kukushkin, S A; Osipov, A V

2017-01-01

The paper focuses on the study of transformation of silicon crystal into silicon carbide crystal via substitution reaction with carbon monoxide gas. As an example, the Si(1 0 0) surface is considered. The cross section of the potential energy surface of the first stage of transformation along the reaction pathway is calculated by the method of nudged elastic bands. It is found that in addition to intermediate states associated with adsorption of CO and SiO molecules on the surface, there is also an intermediate state in which all the atoms are strongly bonded to each other. This intermediate state significantly reduces the activation barrier of transformation down to 2.6 eV. The single imaginary frequencies corresponding to the two transition states of this transformation are calculated, one of which is reactant-like, whereas the other is product-like. By methods of quantum chemistry of solids, the second stage of this transformation is described, namely, the transformation of precarbide silicon into silicon carbide. Energy reduction per one cell is calculated for this ‘collapse’ process, and bond breaking energy is also found. Hence, it is concluded that the smallest size of the collapsing islet is 30 nm. It is shown that the chemical bonds of the initial silicon crystal are coordinately replaced by the bonds between Si and C in silicon carbide, which leads to a high quality of epitaxy and a low concentration of misfit dislocations. (paper)

Interaction of noble-metal fission products with pyrolytic silicon carbide

International Nuclear Information System (INIS)

Lauf, R.J.; Braski, D.N.

1982-01-01

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain layers of pyrolytic carbon and silicon carbide, which act as a miniature pressure vessel and form the primary fission product barrier. Of the many fission products formed during irradiation, the noble metals are of particular interest because they interact significantly with the SiC layer and their concentrations are somewhat higher in the low-enriched uranium fuels currently under consideration. To study fission product-SiC interactions, particles of UO 2 or UC 2 are doped with fission product elements before coating and are then held in a thermal gradient up to several thousand hours. Examination of the SiC coatings by TEM-AEM after annealing shows that silver behaves differently from the palladium group

Development of a Process for a High Capacity Arc Heater Production of Silicon for Solar Arrays

Science.gov (United States)

Reed, W. H.

1979-01-01

A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant (sodium) are injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection were developed. Included in this report are: test system preparation; testing; injection techniques; kinetics; reaction demonstration; conclusions; and the project status.

Activity measurement of 33P and 32P radionuclide mixture

International Nuclear Information System (INIS)

Hanker, I.; Kansky, Z.

1984-01-01

The possibilities are briefly summed up of measuring mixtures of 33 P and 32 P with special regard to the method of simultaneous determination of both radionuclides in a liquid scintillator. This method was experimentally tested for special detection sensitivity and intended special applications in plant physiology and biochemistry using a dioxane scintillator (SLD-31, Spolana Neratovice, CSSR) and a Packard Tri-Carb 300 C, USA. The method gave erroneous results. The main cause of the errors in measurements of the 33 P and 32 P mixture in the SLD-31 was the adsorption of radionuclides on the inner wall of glass tubes. This phenomenon is not accompanied by changes in the quenching index. However, the effectiveness of measurement dropped and the relative contribution of the spectra of the two radionuclides changed with the time following sample preparation. The said effects were removed by adding 0.4% silicon dioxide (Cab-O-Sil M5, Serva) to the liquid scintillator. (author)

Analysis of the behavior of gold in silicon by neutron activation method

International Nuclear Information System (INIS)

Kohara, Rikusei

1977-01-01

Diffusion behavior and distribution of a trace of gold (10 16 Atoms/cm 3 level) in silicon have been investigated by neutron activation analysis and autoradiography. The diffusion coefficient of gold in silicon was expressed by the equation D(cm 2 /s)=5.6 exp (-49kcal/RT), which was approximately 10 5 times as much as that of phosphorus or boron. The solubility of gold in silicon at 1000 0 C and 1100 0 C was (1.9+-0.2)x10 16 and (6.7+-0.7)x10 16 Atoms/cm 3 , respectively. Two factors, in addition to temperature, were found to effect the concentration of gold in silicon. One is an enhanced gold solubility effect in the presence of such impurity elements as phosphorus or arsenic. Another is the similar effect induced by lattice defects in silicon crystals. A possible distribution model of gold in digital devices was proposed from these results. (auth.)

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

Science.gov (United States)

Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

2018-05-02

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

Process model for carbothermic production of silicon metal

Energy Technology Data Exchange (ETDEWEB)

Andresen, B.

1995-09-12

This thesis discusses an advanced dynamical two-dimensional cylinder symmetric model for the high temperature part of the carbothermic silicon metal process, and its computer encoding. The situation close to that which is believed to exist around one of three electrodes in full-scale industrial furnaces is modelled. This area comprises a gas filled cavity surrounding the lower tip of the electrode, the metal pool underneath and the lower parts of the materials above. The most important phenomena included are: Heterogeneous chemical reactions taking place in the high-temperature zone (above 1860 {sup o}C), Evaporation and condensation of silicon, Transport of materials by dripping, Turbulent or laminar fluid flow, DC electric arcs, Heat transport by convection, conduction and radiation. The results from the calculations, such as production rates, gas- and temperature distributions, furnace- and particle geometries, fluid flow fields etc, are presented graphically. In its present state the model is a prototype. The process is very complex, and the calculations are time consuming. The governing equations are coded into a Fortran 77 computer code applying the commercial 3D code FLUENT as a basis. 64 refs., 110 figs., 11 tabs.

A simple chemical method for the separation of phosphorus interfering the trace element determinations by neutron activation analysis in high doped silicon wafers

International Nuclear Information System (INIS)

Wagler, H.; Flachowsky, J.

1986-01-01

Neutron activation analysis is one of the most available method for the determination of trace elements, but in the case of P-doped silicon wafers the 32 P-activity interferes the gamma spectrometry. It is not possible to determine the trace elements without chemical manipulations. On the other hand, time consuming chemical separations should be avoided. Therefore, a simple and rapid P-separation method has to be developed, in which the following twelve trace elements should be taken into consideration: Ag, As, Au, Co, Cr, Cu, Fe, Mo, Na, Sb, W, and Zn. After acid oxidative dissolution of the activated sample, P is present as phosphate ion. The phosphate ion is removed by precipitation as BiPO 4 . (author)

NTD Silicon; Product Characteristics, Main Uses and Growth Potential

International Nuclear Information System (INIS)

Hansen, M. G.; Bjorling, C. F.

2013-01-01

Topsil is a specialised manufacturer of ultrapure float zone silicon since 1959, headquartered in Denmark. Topsil co-pioneered the invention of Neutron Transmutation Doped (NTD) monocrystalline silicon with research institute Risoe in the 1970s and has since then been world leading manufacturer of NTD silicon for the power market. This presentation will focus on NTD silicon; its characteristics, invention and main uses. It will address the trends of the power market and market projections for NTD, and discuss the growth potential in the years ahead, including larger silicon wafers and management of the NTD supply chain

NTD Silicon; Product Characteristics, Main Uses and Growth Potential

Energy Technology Data Exchange (ETDEWEB)

Hansen, M. G.; Bjorling, C. F. [Topsil Semiconductor Materials A/S, Odense (Denmark)

2013-07-01

Topsil is a specialised manufacturer of ultrapure float zone silicon since 1959, headquartered in Denmark. Topsil co-pioneered the invention of Neutron Transmutation Doped (NTD) monocrystalline silicon with research institute Risoe in the 1970s and has since then been world leading manufacturer of NTD silicon for the power market. This presentation will focus on NTD silicon; its characteristics, invention and main uses. It will address the trends of the power market and market projections for NTD, and discuss the growth potential in the years ahead, including larger silicon wafers and management of the NTD supply chain.

Production and Quality Assurance of Detector Modules for the LHCb Silicon Tracker

CERN Document Server

Volyanskyy, D; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Löchner, S; Maciuc, F; Schmelling, M; Smale, N; Schwingenheuer, B; Voss, H; Borysova, M; Ohrimenko, O; Pugatch, V; Yakovenko, V; Bay, A; Bettler, M O; Fauland, P; Frei, R; Nicolas, L; Knecht, M; Perrin, A; Schneider, O; Tran, M T; Van Hunen, J; Vervink, K; Adeva, B; Esperante-Pereira, D; Gallas, A; Fungueirino-Pazos, J L; Lois, C; Pazos-Alvarez, A; Pérez-Trigo, E; Pló-Casasus, M; Vázquez, P; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Lehner, F; Needham, M; Sakhelashvili, T; Steiner, S; Straumann, U; Van Tilburg, J; Vollhardt, A; Wenger, A

2007-01-01

The LHCb experiment, which is currently under construction at the Large Hadron Collider~(CERN, Geneva), is designed to study $CP$ violation and find rare decays in the $B$ meson system. To achieve the physics goals the LHCb detector must have excellent tracking performance. An important element of the LHCb tracking system is the Silicon Tracker, which covers a sensitive surface of about 12~m$^2$ with silicon microstrip detectors and includes about 272k readout channels. It uses up to 132~cm long detector modules with readout strips of up to 38~cm in length and up to 57~cm long Kapton interconnects in between sensors and readout hybrids. The production of detector modules has been completed recently and the detector is currently under installation. A rigorous quality assurance programme has been performed to ensure that the detector modules meet the mechanical and electrical requirements and study their various characteristics. In this paper, the detector design, the module production steps, and the module qua...

Activation analysis for measurements of silicon, phosphorus, alkali metals and other elements in high-purity metals

International Nuclear Information System (INIS)

Schmid, W.

1988-01-01

In the present thesis, methods of activation analysis were developed for the determination of the elements silicon, phosphorus, potassium, sodium, i.a. in the high-purity metals vanadium, niobium, tantalum, tungsten, molybdenum and iron. The determination of silicon is based on the activation of samples with reactor neutrons, on a subsequent radiochemical separation of the tracer radionuclide 31 Si resulting from the reaction 30 Si(n,γ), and on the measurement of β activity with the help of a liquid scintillation measuring desk. Since the tracer radionuclide 31 Si almost exclusively emits β rays which are not sufficiently nuclide-specific, silicon was selectively separated from the other sample elements by being distilled as silicon tetrafluoride. The processing of the residue following the separation of silicon permits a complementary gamma-spectroscopic determination of a whole lot of additional elements. Thus, the separation of the nuclide 182 Ta with the anion exchanger Dowex 1X8 from HF/H 2 SO 4 medium permits the determination of 22 elements in vanadium, niobium and tantalum. Phosphorus content is determined by activating the samples with rapid neutrons (cyclotrons) via the reaction 31 P(n,p) 31 Si. (orig./MM) [de

Some considerations on silicone oil in high-current and energy-disconnecting mechanisms

International Nuclear Information System (INIS)

Vogel, H.F.

1984-03-01

Silicone oil is considered inflammable. The dissociation products generated by an electric arc under silicone oil are known to form a highly explosive mixture with air. We calculate the arc energy required for dissociation to be 32 kJ per liter of gas mixture at standard pressure and temperature. We calculate the arc voltage gradient at a pressure of 50 atm and current density of 1 kA/mm 2 to be 0.5 kV/cm, resulting in an arc voltage of several kV, depending on the arc length. In a multikiloampere arc, the resulting arc power is likely to cause a pressure of many atmospheres in a shock wave

Multi-quantum spin resonances of intrinsic defects in silicon carbide

International Nuclear Information System (INIS)

Georgy Astakhov

2014-01-01

We report the observation of multi-quantum microwave absorption and emission, induced by the optical excitation of silicon vacancy related defects in silicon carbide (SiC). In particular, we observed two-quantum transitions from +3/2 to -1/2 and from -3/2 to +1/2 spin sublevels, unambiguously indicating the spin S = 3/2 ground state. Our findings may have implications for a broad range of quantum applications. On one hand, a single silicon vacancy defect is a potential source of indistinguishable microwave photon pairs due to the two-quantum emission process. On the other hand, the two-quantum absorption can be used generate a population inversion, which is a prerequisite to fabricate solid-state maser and quantum microwave amplifier. This opens a new platform cavity quantum electrodynamics experiments and quantum information processing on a single chip. (author)

Dominant rate process of silicon surface etching by hydrogen chloride gas

International Nuclear Information System (INIS)

Habuka, Hitoshi; Suzuki, Takahiro; Yamamoto, Sunao; Nakamura, Akio; Takeuchi, Takashi; Aihara, Masahiko

2005-01-01

Silicon surface etching and its dominant rate process are studied using hydrogen chloride gas in a wide concentration range of 1-100% in ambient hydrogen at atmospheric pressure in a temperature range of 1023-1423 K, linked with the numerical calculation accounting for the transport phenomena and the surface chemical reaction in the entire reactor. The etch rate, the gaseous products and the surface morphology are experimentally evaluated. The dominant rate equation accounting for the first-order successive reactions at silicon surface by hydrogen chloride gas is shown to be valid. The activation energy of the dominant surface process is evaluated to be 1.5 x 10 5 J mol - 1 . The silicon deposition by the gaseous by-product, trichlorosilane, is shown to have a negligible influence on the silicon etch rate

An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

Science.gov (United States)

Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

2017-09-01

Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

A review on the current status and production technology of 32,33P-orthophosphoric acid

International Nuclear Information System (INIS)

Park, Ul Jae; Han, Hyun Soo; Cho, Woon Kap; Kuznetsov, Rostislav A.

2000-10-01

The current status of 32 , 33 P-Orthophosphoric acid production technology is reviewed. The following aspects of the technology are covered: - production of phosphorus-32 and phosphorus-33 using various nuclear reactions; - chemical properties of sulfur and phosphorus effecting the technology of radioactive phosphorus production; - chemical state of 32 , 33 P in neutron irradiated sulfur; - the technology of radioactive phosphorus isolation from neutron irradiated target and orthophosphoric acid production; - purification of 32 , 33 P-orthophosphoric acid from impurities and some related problems, like the nature of impurities, the storage of the final product, etc. - the quality control procedures of carrier-free ( 32 , 33 P)-orthophosphoric acid preparations

Active graphene-silicon hybrid diode for terahertz waves.

Science.gov (United States)

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-05-11

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

Silicon Nanocrystal Synthesis in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with grains smaller than 5 nm are widely recognized as a key material in optoelectronic devices, lithium battery electrodes, and bio-medical labels. Another important characteristic is that silicon is an environmentally safe material that is used in numerous silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma-enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. In this study, we explore the possibility of microplasma technologies for efficient production of mono-dispersed nanocrystalline silicon particles on a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using a very-high-frequency (144 MHz) power source in a capillary glass tube with volume of less than 1 μl. Fundamental plasma parameters of the microplasma were characterized using optical emission spectroscopy, which respectively indicated electron density of 1015 cm-3, argon excitation temperature of 5000 K, and rotational temperature of 1500 K. Such high-density non-thermal reactive plasma can decompose silicon tetrachloride into atomic silicon to produce supersaturated silicon vapor, followed by gas-phase nucleation via three-body collision: particle synthesis in high-density plasma media is beneficial for promoting nucleation processes. In addition, further growth of silicon nuclei can be terminated in a short-residence-time reactor. Micro-Raman scattering spectra showed that as-deposited particles are mostly amorphous silicon with a small fraction of silicon nanocrystals. Transmission electron micrography confirmed individual 3-15 nm silicon nanocrystals. Although particles were not mono-dispersed, they were well separated and not coagulated.

Spatial decoupling of light absorption and catalytic activity of Ni-Mo-loaded high-aspect-ratio silicon microwire photocathodes

Science.gov (United States)

Vijselaar, Wouter; Westerik, Pieter; Veerbeek, Janneke; Tiggelaar, Roald M.; Berenschot, Erwin; Tas, Niels R.; Gardeniers, Han; Huskens, Jurriaan

2018-03-01

A solar-driven photoelectrochemical cell provides a promising approach to enable the large-scale conversion and storage of solar energy, but requires the use of Earth-abundant materials. Earth-abundant catalysts for the hydrogen evolution reaction, for example nickel-molybdenum (Ni-Mo), are generally opaque and require high mass loading to obtain high catalytic activity, which in turn leads to parasitic light absorption for the underlying photoabsorber (for example silicon), thus limiting production of hydrogen. Here, we show the fabrication of a highly efficient photocathode by spatially and functionally decoupling light absorption and catalytic activity. Varying the fraction of catalyst coverage over the microwires, and the pitch between the microwires, makes it possible to deconvolute the contributions of catalytic activity and light absorption to the overall device performance. This approach provided a silicon microwire photocathode that exhibited a near-ideal short-circuit photocurrent density of 35.5 mA cm-2, a photovoltage of 495 mV and a fill factor of 62% under AM 1.5G illumination, resulting in an ideal regenerative cell efficiency of 10.8%.

Frequency dependence of the active impedance component of silicon thin-film resistors

International Nuclear Information System (INIS)

Belogurov, S.V.; Gostilo, V.V.; Yurov, A.S.

1987-01-01

A high-resistant resistor on the silicon thin-film substrate considerably superior in noise and frequency performance than commercial resistors is described. The frequency dependence of the active impedance component is tested for determining noise and frequency dependences of silicon thin-film resistors. The obtained results permit to calculate the energy equivalent of resistor noise in nuclear radiation detection units at any temperature according to its frequency characteristic at room temperature

Research within the coordinated programme on comparison of methods of ''age'' determination of ground water based on decay of long-lived radioisotopes, especially 32-Si

International Nuclear Information System (INIS)

Clausen, H.

1982-06-01

Groundwater samples from two investigation areas have been analysed for the content of 32 Si. The possible presence of 32 Si in groundwater indicates that the ''younger'' component as underground production of 32 Si is unlikely. The concentration of 32 Si in measured samples except one (shallow groundwater) is low (around measurement error) which may indicate the exchange of silicone between radioactive and ''dead'' silica in the soil. At this stage the 32 Si ''dating'' method is not feasible for groundwater

Citrobacter farmeri phas32, an isolate from bean (Phaseolus vulgaris farm soil with high phytase production

Directory of Open Access Journals (Sweden)

Maryam Ebrahimian

2017-12-01

Full Text Available Introduction: Phytase hydrolyzes phytic acid and enhances bioavailability of phosphorus and other nutritive minerals for monogastric animals, so it is commonly used as an important food additive. Materials and methods: The aim of this study was isolation of phytase producing bacteria from one of Shushtar's bean farms, Southwest of Iran by phytase screening medium (PSM and optimization of the growth and enzyme productive conditions by the best isolate. Results: The best isolate was identified as Citrobacter farmeri strain phas32. Optimized conditions for phytase production by this isolate were 30˚C, pH 7, 0.25% phytic acid and 48 h incubation and phytase enzyme of phas32 had the best activity at 65˚C and pH 8.5. Enzyme unit and its molecular weight were 31 U/ml and 40 KD, respectively. Discussion and conclusion: Finally, based on these results it can be concluded that the Citrobacter farmeri strain phas32 is potent phytase producer that can be used for large scale enzyme production.

Process research of non-CZ silicon material

Science.gov (United States)

Campbell, R. B.

1984-01-01

Advanced processing techniques for non-CZ silicon sheet material that might improve the cost effectiveness of photovoltaic module production were investigated. Specifically, the simultaneous diffusion of liquid boron and liquid phosphorus organometallic precursors into n-type dendritic silicon web was examined. The simultaneous junction formation method for solar cells was compared with the sequential junction formation method. The electrical resistivity of the n-n and p-n junctions was discussed. Further research activities for this program along with a program documentation schedule are given.

Mass production of silicon pore optics for ATHENA

Science.gov (United States)

Wille, Eric; Bavdaz, Marcos; Collon, Maximilien

2016-07-01

Silicon Pore Optics (SPO) provide high angular resolution with low effective area density as required for the Advanced Telescope for High Energy Astrophysics (Athena). The x-ray telescope consists of several hundreds of SPO mirror modules. During the development of the process steps of the SPO technology, specific requirements of a future mass production have been considered right from the beginning. The manufacturing methods heavily utilise off-the-shelf equipment from the semiconductor industry, robotic automation and parallel processing. This allows to upscale the present production flow in a cost effective way, to produce hundreds of mirror modules per year. Considering manufacturing predictions based on the current technology status, we present an analysis of the time and resources required for the Athena flight programme. This includes the full production process starting with Si wafers up to the integration of the mirror modules. We present the times required for the individual process steps and identify the equipment required to produce two mirror modules per day. A preliminary timeline for building and commissioning the required infrastructure, and for flight model production of about 1000 mirror modules, is presented.

Influence of silicon on production and fruit quality of strawberry

Directory of Open Access Journals (Sweden)

Maria Ligia Souza Silva

2013-12-01

Full Text Available In Brazil, the culture of strawberries is an important activity for small and medium farmers. Among the important factors for culture is fertilization, which can interfere in production and fruit quality. Silicon (Si is one of the little studied in fertilization, which demonstrated some beneficial to several different cultures. The objective of this study was to evaluate the influence of Si on production and concentration of anthocyanin and titratable acid in the fruit and reading SPAD (chlorophyll in the leaves of the strawberry. The experiment was conducted in a greenhouse using pots containing 14.5 kg of limed soil, fertilized and three plants (cultivar Milsei Tudla were transplanted to pots. Treatments consisted of application of Si at 0, 12.5, 25, 50 and 100 mg kg-1 rates, via soil or foliar. During this experiment the reading of SPAD (chlorophyll and the end of the experiment, the shoots was collected, dried, weighed, ground and analyzed by content and accumulation Si. The fruits were weighed and analyzed the concentration of anthocyanin, titratable acidity and Si concentration. The fertilization with Si, via soil or foliar applied, contributed to the increase in fruit production, especially with the application via soil. Applying foliar or soil promoted an increase in the values of titratable acidity and anthocyanins. Rates of Si via soil or foliar applied influenced the reading SPAD (chlorophyll, in the leaves. The Si independent of the form of application promoted improvements in strawberry crop.

A high volume cost efficient production macrostructuring process. [for silicon solar cell surface treatment

Science.gov (United States)

Chitre, S. R.

1978-01-01

The paper presents an experimentally developed surface macro-structuring process suitable for high volume production of silicon solar cells. The process lends itself easily to automation for high throughput to meet low-cost solar array goals. The tetrahedron structure observed is 0.5 - 12 micron high. The surface has minimal pitting with virtually no or very few undeveloped areas across the surface. This process has been developed for (100) oriented as cut silicon. Chemi-etched, hydrophobic and lapped surfaces were successfully texturized. A cost analysis as per Samics is presented.

Real-time monitoring of enzyme activity in a mesoporous silicon double layer

Science.gov (United States)

Orosco, Manuel M.; Pacholski, Claudia; Sailor, Michael J.

2009-04-01

The activity of certain proteolytic enzymes is often an indicator of disease states such as cancer, stroke and neurodegeneracy, so there is a need for rapid assays that can characterize the kinetics and substrate specificity of enzymatic reactions. Nanostructured membranes can efficiently separate biomolecules, but coupling a sensitive detection method to such a membrane remains difficult. Here, we demonstrate a single mesoporous nanoreactor that can isolate and quantify in real time the reaction products of proteases. The reactor consists of two layers of porous films electrochemically prepared from crystalline silicon. The upper layer, with large pore sizes (~100 nm in diameter), traps the protease and acts as the reactor. The lower layer, with smaller pore sizes (~6 nm), excludes the proteases and other large proteins and captures the reaction products. Infiltration of the digested fragments into the lower layer produces a measurable change in optical reflectivity, and this allows label-free quantification of enzyme kinetics in real time within a volume of ~5 nl.

A biomedical application of 32Si using accelerator mass spectrometry

International Nuclear Information System (INIS)

Di Tada, M.L.; Fifield, L.K.; Liu, K.; Cresswell, R.G.; Day, J.L.; Oldham, C.L.; Popplewell, J.; Carling, R.

1998-01-01

As a first application of the 32 Si tracer to a biomedical project, the first measurement of silicon uptake by a human subject has been carried out. The motivation for this study aroused from the supposition that silicate may be important in human physiology in protecting against aluminium toxicity. Indeed, in an earlier study of aluminium uptake, using the isotopic tracer, 26 Al, it had been shown that blood-Al levels following Al dosing were lower when the dose was accompanied by dissolved silicate than when it was not. An experiment was set out to determine directly the fraction absorbed from the gastrointestinal tract, and to quantify the kinetics of renal elimination, using the silicon isotopic tracer, 32 Si. A gas-filled magnet technique was developed for measuring 32 Si by AMS which allows a spatial separation of 32 S from 32 Si and hence a reduction in the counting rate entering the detector by a factor of 10 6 . The results for silicon absorption are consistent with those from earlier studies, indicating that the simultaneous ingestion of Al and silicate enhances the rate of aluminium excretion for a period of 12-24 hours

Method of production of hollow silicon nitride articles

International Nuclear Information System (INIS)

Parr, N.L.; Brown, R.L.

1971-01-01

The hollow articles prepared according to the invention have a high density, exhibit no internal stresses and correspond to high demands of tolerance and surface quality. One obtains these by flame spraying silicon powder on a pre-heated form designed with separating agent - e.g. NaCl. After removing the form, the silicon is nitridated to silicon nitride by heating in N 2 or in an atmosphere of ammonia. This process can be interrupted if the article is also to be mechanically processed, and then the nitridation can be completed. (Hoe/LH) [de

Results from a first production of enhanced Silicon Sensor Test Structures produced by ITE Warsaw

Science.gov (United States)

Bergauer, T.; Dragicevic, M.; Frey, M.; Grabiec, P.; Grodner, M.; Hänsel, S.; Hartmann, F.; Hoffmann, K.-H.; Hrubec, J.; Krammer, M.; Kucharski, K.; Macchiolo, A.; Marczewski, J.

2009-01-01

Monitoring the manufacturing process of silicon sensors is essential to ensure stable quality of the produced detectors. During the CMS silicon sensor production we were utilising small Test Structures (TS) incorporated on the cut-away of the wafers to measure certain process-relevant parameters. Experience from the CMS production and quality assurance led to enhancements of these TS. Another important application of TS is the commissioning of new vendors. The measurements provide us with a good understanding of the capabilities of a vendor's process. A first batch of the new TS was produced at the Institute of Electron Technology in Warsaw Poland. We will first review the improvements to the original CMS test structures and then discuss a selection of important measurements performed on this first batch.

Simple method of determining induced 32P activity following burning of sulfur tablets by measuring Cherenkov radiation

International Nuclear Information System (INIS)

Kubicek, I.

1986-01-01

A method is described allowing the detemination of induced beta activity of phosphorus-32 using Cherenkov radiation, following the burning of sulfur tablets in the measuring vesels. A mixture of phosphoric acid and sodium phosphate solutions was used as the medium for the production of Cherenkov radiation. The losses of activity during sulfur tablet burning, the detection efficiency and the minimum detectable activity for which the minimum determinable dose was estimated, were determined. The results obtained by measurement with Cherenkov radiation are compared with other techniques of phosphorus-32 detection. The method was tested at VUPL Bratislava on detectors irradited using a 252 Cf fast neutron source. From Caswell's data, the fluence-to-kerma conversin factor was determined for a neutron spectrum calculated by the Monte Carlo method. Tissue kerma was estimated from the neutron fluence corresponding to the appropriate values of saturated activity per 1 sulfur-32 nucleus. (author)

Characterising large area silicon drift detectors with MOS injectors

International Nuclear Information System (INIS)

Bonvicini, V.; Rashevsky, A.; Vacchi, A.

1999-01-01

In the framework of the INFN DSI project, the first prototypes of a large-area Silicon Drift Detector (SDD) have been designed and produced on 5'' diameter wafers of Neutron Transmutation Doped (NTD) silicon with a resistivity of 3000 Ω·cm. The detector is a 'butterfly' bi-directional structure with a drift length of 32 mm and the drifting charge is collected by two arrays of anodes having a pitch of 200 μm. The high-voltage divider is integrated on-board and is realised with p + implantations. For test and calibration purposes, the detector has a new type of MOS injector. The paper presents results obtained to injecting charge at the maximum drift distance (32mm) from the anodes by means of the MOS injecting structure, As front-end electronics, the authors have used a 32-channels low-noise bipolar VLSI circuit (OLA, Omni-purpose Low-noise Amplifer) specifically designed for silicon drift detectors. The uniformity of the drift time in different regions of the sensitive area and its dependence on the ambient temperature are studied

Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate

Science.gov (United States)

Zheng, Xinyu (Inventor); Pain, Bedabrata (Inventor)

2005-01-01

Active pixel sensors for a high quality imager are fabricated using a silicon-on-insulator (SOI) process by integrating the photodetectors on the SOI substrate and forming pixel readout transistors on the SOI thin-film. The technique can include forming silicon islands on a buried insulator layer disposed on a silicon substrate and selectively etching away the buried insulator layer over a region of the substrate to define a photodetector area. Dopants of a first conductivity type are implanted to form a signal node in the photodetector area and to form simultaneously drain/source regions for a first transistor in at least a first one of the silicon islands. Dopants of a second conductivity type are implanted to form drain/source regions for a second transistor in at least a second one of the silicon islands. Isolation rings around the photodetector also can be formed when dopants of the second conductivity type are implanted. Interconnections among the transistors and the photodetector are provided to allow signals sensed by the photodetector to be read out via the transistors formed on the silicon islands.

Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

Science.gov (United States)

Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

2017-03-20

Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

An in Vitro Experimental Study on the Antimicrobial Activity of Silicone Oil against Anaerobic Bacteria.

Science.gov (United States)

Arici, Ceyhun; Aras, Cengiz; Tokman, Hrisi Bahar; Torun, Muzeyyen Mamal

2016-01-01

To investigate the in vitro antimicrobial activity of silicone oil against anaerobic agents, specifically Propionibacterium acnes, Peptostreptococcus spp., Peptostreptococcus anaerobius, Bacteroides fragilis, Fuobacterium spp., and Clostridium tertium. A 0.5 McFarland turbidity of Propionibacterium acnes, Peptostreptococcus spp., Peptostreptococcus anaerobius, Bacteroides fragilis, Fuobacterium spp., and Clostridium tertium was prepared, and 0.1 mL was inoculated into 0.9 mL of silicone oil. Control inoculations were performed in anaerobic blood agar and fluid thioglycollate medium without silicone oil. Propionibacterium acnes retained their viability on the 3rd day in the presence of silicone oil. In total, 9.7 × 10(6) colonies were enumerated from 1 mL of silicone oil. After a prolonged incubation of 7 days, the number of colonies observed was 9.2 × 10(6). The other bacteria disappeared after the 3rd day of incubation in silicone oil. Propionibacterium acnes, which is the most common chronic postoperative endophthalmitis agent, is thought to be resistant to silicone oil.

Single-Event Effects in Silicon and Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Metal impurities profile in a 450kg multi-crystalline silicon ingot by Cold Neutron Prompt Gamma-ray Activation Analysis

International Nuclear Information System (INIS)

Baek, Hani; Sun, Gwang Min; Kim, Ji seok; Oh, Mok; Chung, Yong Sam; Moon, Jong Hwa; Kim, Sun Ha; Baek, Sung Yeol; Tuan, Hoang Sy Minh

2014-01-01

Metal impurities are harmful to multi-crystalline silicon solar cells. They reduce solar cell conversion efficiencies through increased carrier recombination. They are present as isolated point-like impurities or precipitates. This work is to study the concentration profiles of some metal impurities of the directionally solidified 450kg multi-crystalline silicon ingot grown for solar cell production. The concentration of such impurities are generally below 10 15 cm -3 , and as such cannot be detected by physical techniques such as secondary-ion-mass spectroscopy(SIMS). So, we have tried to apply Cold Neutron - Prompt Gamma ray Activation Analysis(CN-PGAA) at the HANARO reactor research. The impurity concentrations of Au, Mn, Pt, Mo of a photovoltaic grade multi-crystalline silicon ingot appear by segregation from the liquid to the solid phase in the central region of the ingot during the crystallization. In the impurities concentration of the bottom region is higher than middle region due to the solid state diffusion. Towards the top region the segregation impurities diffused, during cooling process

Electrical production testing of the D0 Silicon microstrip tracker detector modules

Energy Technology Data Exchange (ETDEWEB)

D0, SMT Production Testing Group; /Fermilab

2006-03-01

The D0 Silicon Microstrip Tracker (SMT) is the innermost system of the D0 detector in Run 2. It consists of 912 detector units, corresponding to 5 different types of assemblies, which add up to a system with 792,576 readout channels. The task entrusted to the Production Testing group was to thoroughly debug, test and grade each detector module before its installation in the tracker. This note describes the production testing sequence and the procedures by which the detector modules were electrically tested and characterized at the various stages of their assembly.

Silicon alleviates simulated acid rain stress of Oryza sativa L. seedlings by adjusting physiology activity and mineral nutrients.

Science.gov (United States)

Ju, Shuming; Wang, Liping; Yin, Ningning; Li, Dan; Wang, Yukun; Zhang, Cuiying

2017-11-01

Silicon (Si) has been a modulator in plants under abiotic stresses, such as acid rain. To understand how silicon made an effect on rice (Oryza sativa L.) exposed to simulated acid rain (SAR) stress, the growth, physiologic activity, and mineral nutrient content in leaves of rice were investigated. The results showed that combined treatments with Si (1.0, 2.0, or 4.0 mM) and SAR (pH 4.0, 3.0, or 2.0) obviously improved the rice growth compared with the single treatment with SAR. Incorporation of Si into SAR treatment decreased malondialdehyde (MDA) content; increased soluble protein and proline contents; promoted CAT, POD, SOD, and APX activity; and maintained the K, Ca, Mg, Fe, Zn, Cu content balance in leaves of rice seedlings under SAR stress. The moderate concentration of Si (2.0 mM) was better than the low and high concentration of Si (1.0 and 4.0 mM). Therefore, application of Si could be a better strategy for maintaining the crop productivity in acid rain regions.

Results from a first production of enhanced Silicon Sensor Test Structures produced by ITE Warsaw

Energy Technology Data Exchange (ETDEWEB)

Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Dragicevic, M. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria)], E-mail: dragicevic@oeaw.ac.at; Frey, M. [Institut fuer Experimentelle Kernphysik (IEKP), Universitaet Karlsruhe (Thailand) (Germany); Grabiec, P.; Grodner, M. [Institute of Electron Technology (ITE), Warsaw (Poland); Haensel, S. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Hartmann, F.; Hoffmann, K.-H. [Institut fuer Experimentelle Kernphysik (IEKP), Universitaet Karlsruhe (Thailand) (Germany); Hrubec, J.; Krammer, M. [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfergasse 18, 1050 Vienna (Austria); Kucharski, K. [Institute of Electron Technology (ITE), Warsaw (Poland); Macchiolo, A. [Max-Planck-Institut fuer Physik (MPI), Munich (Germany); Marczewski, J. [Institute of Electron Technology (ITE), Warsaw (Poland)

2009-01-01

Monitoring the manufacturing process of silicon sensors is essential to ensure stable quality of the produced detectors. During the CMS silicon sensor production we were utilising small Test Structures (TS) incorporated on the cut-away of the wafers to measure certain process-relevant parameters. Experience from the CMS production and quality assurance led to enhancements of these TS. Another important application of TS is the commissioning of new vendors. The measurements provide us with a good understanding of the capabilities of a vendor's process. A first batch of the new TS was produced at the Institute of Electron Technology in Warsaw Poland. We will first review the improvements to the original CMS test structures and then discuss a selection of important measurements performed on this first batch.

Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures

International Nuclear Information System (INIS)

Andoh, Nobuyuki; Sameshima, Toshiyuki; Andoh, Yasunori

2005-01-01

Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 deg. C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top disordered layer formed by ion bombardment was 6 nm. It is reduced to 4 nm by a 3 h heat treatment at 260 deg. C by recrystallization of disordered region. The electrical conductance of silicon films implanted increased to 1.7x10 5 S/sq after 3 h heat treatment

VO production with 14.5 GeV/c silicon beams

International Nuclear Information System (INIS)

Saulys, A.C.; Etkin, A.; Foley, K.J.; Hackenburg, R.W.; Longacre, R.S.; Love, W.A.; Morris, T.W.; Platner, E.D.; Bonner, B.E.; Buchanan, J.A.; Chiou, C.N.; Clement, J.M.; Corcoran, M.D.; Kruk, J.W.; Miettinen, H.E.; Mutchler, G.S.; Nessi, M.; Nessi-Tedaldi, F.; Roberts, J.B.; Chan, C.S.; Kramer, M.A.; Hallman, T.J.; Madansky, L.; Lindebaum, S.J.

1990-01-01

This talk deals with Λ, Κ s O and bar Λ production with 14.5 GeV/c silicon beams. Why study V O production? Because the study of strangeness is an important part of the search for Quark Gluon Plasma (QGP). Many models predict an enhancement of strangeness in a QGP as compared to the amount of strangeness produced in a superposition of nucleon-nucleon interactions. The amount of enhancement varies from model to model. Even if no QGP is detected at AGS energies using Si beams, it is important to understand the production mechanisms in quantitative detail so that standard nucleon-nucleon production mechanism can be distinguished from QGP formation. The advantage of measuring strangeness production by measuring V O production is that V O 's can be identified by kinematics without the use of any special particle ID detectors. The disadvantage is that usually large aperture detectors are required. Experiment 810 has the needed large aperture. This talk describes the technique and results of V O production from ∼ 9,000 interactions of Si in a 1 mil (25 micron) Au target recorded in June, 1989

Assessing neutron generator output using neutron activation of silicon

International Nuclear Information System (INIS)

Kehayias, Pauli M.; Kehayias, Joseph J.

2007-01-01

D-T neutron generators are used for elemental composition analysis and medical applications. Often composition is determined by examining elemental ratios in which the knowledge of the neutron flux is unnecessary. However, the absolute value of the neutron flux is required when the generator is used for neutron activation analysis, to study radiation damage to materials, to monitor the operation of the generator, and to measure radiation exposure. We describe a method for absolute neutron output and flux measurements of low output D-T neutron generators using delayed activation of silicon. We irradiated a series of silicon oxide samples with 14.1 MeV neutrons and counted the resulting gamma rays of the 28 Al nucleus with an efficiency-calibrated detector. To minimize the photon self-absorption effects within the samples, we used a zero-thickness extrapolation technique by repeating the measurement with samples of different thicknesses. The neutron flux measured 26 cm away from the tritium target of a Thermo Electron A-325 D-T generator (Thermo Electron Corporation, Colorado Springs, CO) was 6.2 x 10 3 n/s/cm 2 ± 5%, which is consistent with the manufacturer's specifications

Assessing neutron generator output using neutron activation of silicon

Energy Technology Data Exchange (ETDEWEB)

Kehayias, Pauli M. [Body Composition Laboratory, Jean Mayer United States Department of Agriculture Human Nutrition Research Center on Aging, Tufts University, Boston, MA 02111 (United States); Kehayias, Joseph J. [Body Composition Laboratory, Jean Mayer United States Department of Agriculture Human Nutrition Research Center on Aging, Tufts University, Boston, MA 02111 (United States)]. E-mail: joseph.kehayias@tufts.edu

2007-08-15

D-T neutron generators are used for elemental composition analysis and medical applications. Often composition is determined by examining elemental ratios in which the knowledge of the neutron flux is unnecessary. However, the absolute value of the neutron flux is required when the generator is used for neutron activation analysis, to study radiation damage to materials, to monitor the operation of the generator, and to measure radiation exposure. We describe a method for absolute neutron output and flux measurements of low output D-T neutron generators using delayed activation of silicon. We irradiated a series of silicon oxide samples with 14.1 MeV neutrons and counted the resulting gamma rays of the {sup 28}Al nucleus with an efficiency-calibrated detector. To minimize the photon self-absorption effects within the samples, we used a zero-thickness extrapolation technique by repeating the measurement with samples of different thicknesses. The neutron flux measured 26 cm away from the tritium target of a Thermo Electron A-325 D-T generator (Thermo Electron Corporation, Colorado Springs, CO) was 6.2 x 10{sup 3} n/s/cm{sup 2} {+-} 5%, which is consistent with the manufacturer's specifications.

CHARACTERIZATION OF A THIN SILICON SENSOR FOR ACTIVE NEUTRON PERSONAL DOSEMETERS.

Science.gov (United States)

Takada, M; Nunomiya, T; Nakamura, T; Matsumoto, T; Masuda, A

2016-09-01

A thin silicon sensor has been developed for active neutron personal dosemeters for use by aircrews and first responders. This thin silicon sensor is not affected by the funneling effect, which causes detection of cosmic protons and over-response to cosmic neutrons. There are several advantages to the thin silicon sensor: a decrease in sensitivity to gamma rays, an improvement of the energy detection limit for neutrons down to 0.8 MeV and an increase in the sensitivity to fast neutrons. Neutron response functions were experimentally obtained using 2.5 and 5 MeV monoenergy neutron beams and a (252)Cf neutron source. Simulation results using the Monte Carlo N-Particle transport code agree quite well with the experimental ones when an energy deposition region shaped like a circular truncated cone is used in place of a cylindrical region. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Synthesis of Silicon Nanocrystals in Microplasma Reactor

Science.gov (United States)

Nozaki, Tomohiro; Sasaki, Kenji; Ogino, Tomohisa; Asahi, Daisuke; Okazaki, Ken

Nanocrystalline silicon particles with a grain size of at least less than 10 nm are widely recognized as one of the key materials in optoelectronic devices, electrodes of lithium battery, bio-medical labels. There is also important character that silicon is safe material to the environment and easily gets involved in existing silicon technologies. To date, several synthesis methods such as sputtering, laser ablation, and plasma enhanced chemical vapor deposition (PECVD) based on low-pressure silane chemistry (SiH4) have been developed for precise control of size and density distributions of silicon nanocrystals. We explore the possibility of microplasma technologies for the efficient production of mono-dispersed nanocrystalline silicon particles in a micrometer-scale, continuous-flow plasma reactor operated at atmospheric pressure. Mixtures of argon, hydrogen, and silicon tetrachloride were activated using very high frequency (VHF = 144 MHz) power source in a capillary glass tube with a volume of less than 1 μ-liter. Fundamental plasma parameters of VHF capacitively coupled microplasma were characterized by optical emission spectroscopy, showing electron density of approximately 1015 cm-3 and rotational temperature of 1500 K, respectively. Such high-density non-thermal reactive plasma has a capability of decomposing silicon tetrachloride into atomic silicon to produce supersaturated atomic silicon vapor, followed by gas phase nucleation via three-body collision. The particle synthesis in high-density plasma media is beneficial for promoting nucleation process. In addition, further growth of silicon nuclei was able to be favorably terminated in a short-residence time reactor. Micro Raman scattering spectrum showed that as-deposited particles were mostly amorphous silicon with small fraction of silicon nanocrystals. Transmission electron micrograph confirmed individual silicon nanocrystals of 3-15 nm size. Although those particles were not mono-dispersed, they were

NEW METHOD OF PRODUCTION OF ALUNINUM SILICON ALLOYS

Directory of Open Access Journals (Sweden)

V. K. Afanasiev

2015-01-01

Full Text Available A new approach to the preparation of aluminum-silicon alloys, based on the concept of the leading role of hydrogen in determining the structure and properties of alloys consists in using as charge materials of silicon dioxide (silica and hydrogen instead of crystalline silicon was described. Practical ways to implement the new method were proposed on the example of industrial alloys prepared on charge synthetic alloy. It is shown that the application of the proposed method allows to improve the mechanical properties and reduce the coefficient of thermal expansion alloys, Al-Si. The effect of heat treatment on mechanical properties, density and thermal expansion of synthetic alloys was researched.

Release of low molecular weight silicones and platinum from silicone breast implants.

Science.gov (United States)

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

Silicon Nano wires with MoS_x and Pt as Electrocatalysts for Hydrogen Evolution Reaction

International Nuclear Information System (INIS)

Hsieh, S.H.; Ho, S.T.; Chen, W.J.

2016-01-01

A convenient method was used for synthesizing Pt-nanoparticle//silicon nano wires nano composites. Obtained Pt-/silicon nano wires electrocatalysts were characterized by transmission electron microscopy (TEM). The hydrogen evolution reaction efficiency of the Pt-/silicon nano wire nano composite catalysts was assessed by examining polarization and electrolysis measurements under solar light irradiations. The electrochemical characterizations demonstrate that Pt-/silicon nano wire electrodes exhibited an excellent catalytic activity for hydrogen evolution reaction in an acidic electrolyte. The hydrogen production capability of Pt-/silicon nano wires is also comparable to /silicon nano wires and Pt/silicon nano wires. Electrochemical impedance spectroscopy experiments suggest that the enhanced performance of Pt-/silicon nano wires can be attributed to the fast electron transfer between Pt-/silicon nano wire electrodes and electrolyte interfaces.

Feasibility studies on the production of essential radioisotopes (24Na and 32P) using the Ghana Miniature Neutron Source Reactor (GHARR-1)

International Nuclear Information System (INIS)

Dotse, S.C.

2012-01-01

Feasibility studies on the production of 32 P and 24 Na using a Miniature Neutron Source Reactor named Ghana Research Reactor-1 (GHARR-1) has been conducted. A theoretical model of the cyclic activation technique was developed for the simulation of specific activities under varying parameters. Specific activity values estimated for four cycles of irradiation with activation parameters falling within the specifications of the reactor were experimentally validated. Experimented results were compared to those theoretically estimated for both 24 Na and 32 P. Experimented specific activity values for both radioisotopes generally fell below their theoretical values but recorded activity build-ups from one cycle to the other. The 24 Na nuclide showed a regular pattern for the increase in specific activity from one cycle to the next with an average percentage difference of experimented to theoretical value of 19%. The 32 P nuclide showed an irregular pattern for the increase in specific activity from one cycle to the next with an average percentage difference of experimental to theoretical value of 11%. The specific activities experimentally attained, with reference to activity levels used for various applications in agriculture and industry suggests the cyclic activation technique can be used for the production of radioisotopes of appreciable activities using low power research reactors, which are characterised with limited excess core reactivity and cannot sustain long periods of irradiation. (au)

Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

Science.gov (United States)

Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

2015-08-01

A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

A review on the current status and production technology of {sup 32,} {sup 33}P-orthophosphoric acid

Energy Technology Data Exchange (ETDEWEB)

Park, Ul Jae; Han, Hyun Soo; Cho, Woon Kap; Kuznetsov, Rostislav A

2000-10-01

The current status of {sup 32}, {sup 33}P-Orthophosphoric acid production technology is reviewed. The following aspects of the technology are covered: - production of phosphorus-32 and phosphorus-33 using various nuclear reactions; - chemical properties of sulfur and phosphorus effecting the technology of radioactive phosphorus production; - chemical state of {sup 32}, {sup 33}P in neutron irradiated sulfur; - the technology of radioactive phosphorus isolation from neutron irradiated target and orthophosphoric acid production; - purification of {sup 32}, {sup 33}P-orthophosphoric acid from impurities and some related problems, like the nature of impurities, the storage of the final product, etc. - the quality control procedures of carrier-free ({sup 32}, {sup 33}P)-orthophosphoric acid preparations.

Porous silicon confers bioactivity to polycaprolactone composites in vitro.

Science.gov (United States)

Henstock, J R; Ruktanonchai, U R; Canham, L T; Anderson, S I

2014-04-01

Silicon is an essential element for healthy bone development and supplementation with its bioavailable form (silicic acid) leads to enhancement of osteogenesis both in vivo and in vitro. Porous silicon (pSi) is a novel material with emerging applications in opto-electronics and drug delivery which dissolves to yield silicic acid as the sole degradation product, allowing the specific importance of soluble silicates for biomaterials to be investigated in isolation without the elution of other ionic species. Using polycaprolactone as a bioresorbable carrier for porous silicon microparticles, we found that composites containing pSi yielded more than twice the amount of bioavailable silicic acid than composites containing the same mass of 45S5 Bioglass. When incubated in a simulated body fluid, the addition of pSi to polycaprolactone significantly increased the deposition of calcium phosphate. Interestingly, the apatites formed had a Ca:P ratio directly proportional to the silicic acid concentration, indicating that silicon-substituted hydroxyapatites were being spontaneously formed as a first order reaction. Primary human osteoblasts cultured on the surface of the composite exhibited peak alkaline phosphatase activity at day 14, with a proportional relationship between pSi content and both osteoblast proliferation and collagen production over 4 weeks. Culturing the composite with J744A.1 murine macrophages demonstrated that porous silicon does not elicit an immune response and may even inhibit it. Porous silicon may therefore be an important next generation biomaterial with unique properties for applications in orthopaedic tissue engineering.

Determination of specific activity of phosphorus-32 labelled o-phosphoric acid

International Nuclear Information System (INIS)

Sane, S.U.

2015-01-01

Phosphorus-32 is one of the important radioisotopes used in therapeutic nuclear medicine. This work was aimed at developing a fast and sensitive procedure to determine trace amounts of 32 P which is present in various acidic chemical form thereby enabling to determine its specific activity. The method utilizes ammonium molybdate and metol for complexing with phosphorus in presence of sulphuric acid which was measured using UV-VIS spectrophotometer. The phosphate and molybdate ions form a stable complex which turns blue (molybdenum blue) by reduction with sulphuric acid. The absorbance of the complex thus formed was measured at 700 nm. Five batches of 32 P produced were analyzed using the procedure and specific activity was determined. It was found that radioactivity of 32 P did not interfere in absorbance measurements and the method could be successfully adopted for the determination of specific activity of 32 P. A scope of the method is to find the chemical purity of radioactive phosphorus ( 32 P) in quality control analysis. (author)

Removal of inclusions from silicon

Science.gov (United States)

Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

2009-11-01

The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

Anti-pepsin activity of silicon dioxide nanoparticles

Directory of Open Access Journals (Sweden)

Hussein Kadhem Al-Hakeim

2016-09-01

Full Text Available SiO2NPs as an inhibitor of pepsin enzyme for treatment of gastro-esophageal reflux disease (GERD was used. Silicon dioxide nanoparticles (pepsin coated SiO2NPs are among the safest nanoparticles that can be used inside the human body. The activity of pepsin before and after the addition of certain amounts of the NPs to the reaction mixture was measured spectrophotometrically. Furthermore, these experiments were repeated at different temperatures, different weights of NPs, and different ionic strengths. The kinetic aparameters (Km & Vmax of the pepsin catalyzed reactions were calculated from the Lineweaver-Burke plots. The results showed that there is a significant reduction of pepsin activity by SiO2NPs (Vmax of free pepsin = 4.82 U and Vmax of the immobilizedpepsin = 2.90 U. The results also indicated that the presence of ionic strength causes remarkable reduction of pepsin activity. It can be concluded the best condition for inhibition of pepsin activity is by using a combination of SiO2NPs and high concentration NaCl at 37 °C.

Fast determination of impurities in metallurgical grade silicon for photovoltaics by instrumental neutron activation analysis

International Nuclear Information System (INIS)

Hampel, J.; Boldt, F.M.; Gerstenberg, H.; Hampel, G.; Kratz, J.V.; Reber, S.; Wiehl, N.

2011-01-01

Standard wafer solar cells are made of near-semiconductor quality silicon. This high quality material makes up a significant part of the total costs of a solar module. Therefore, new concepts with less expensive so called solar grade silicon directly based on physiochemically upgraded metallurgical grade silicon are investigated. Metallurgical grade silicon contains large amounts of impurities, mainly transition metals like Fe, Cr, Mn, and Co, which degrade the minority carrier lifetime and thus the solar cell efficiency. A major reduction of the transition metal content occurs during the unidirectional crystallization due to the low segregation coefficient between the solid and liquid phase. A further reduction of the impurity level has to be done by gettering procedures applied to the silicon wafers. The efficiency of such cleaning procedures of metallurgical grade silicon is studied by instrumental neutron activation analysis (INAA). Small sized silicon wafers of approximately 200 mg with and without gettering step were analyzed. To accelerate the detection of transition metals in a crystallized silicon ingot, experiments of scanning whole vertical silicon columns with a diameter of approximately 1 cm by gamma spectroscopy were carried out. It was demonstrated that impurity profiles can be obtained in a comparably short time. Relatively constant transition metal ratios were found throughout an entire silicon ingot. This led to the conclusion that the determination of several metal profiles might be possible by the detection of only one 'leading element'. As the determination of Mn in silicon can be done quite fast compared to elements like Fe, Cr, and Co, it could be used as a rough marker for the overall metal concentration level. Thus, a fast way to determine impurities in photovoltaic silicon material is demonstrated. - Highlights: → We demonstrate a fast way to determine impurities in photovoltaic silicon by NAA. → We make first experiments of locally

Acetylcholinesterase immobilization and characterization, and comparison of the activity of the porous silicon-immobilized enzyme with its free counterpart.

Science.gov (United States)

Saleem, Muhammad; Rafiq, Muhammad; Seo, Sung-Yum; Lee, Ki Hwan

2016-02-02

A successful prescription is presented for acetylcholinesterase physically adsorbed on to a mesoporous silicon surface, with a promising hydrolytic response towards acetylthiocholine iodide. The catalytic behaviour of the immobilized enzyme was assessed by spectrophotometric bioassay using neostigmine methyl sulfate as a standard acetycholinesterase inhibitor. The surface modification was studied through field emission SEM, Fourier transform IR spectroscopy, energy-dispersive X-ray spectroscopy, cathode luminescence and X-ray photoelectron spectroscopy analysis, photoluminescence measurement and spectrophotometric bioassay. The porous silicon-immobilized enzyme not only yielded greater enzyme stability, but also significantly improved the native photoluminescence at room temperature of the bare porous silicon architecture. The results indicated the promising catalytic behaviour of immobilized enzyme compared with that of its free counterpart, with a greater stability, and that it aided reusability and easy separation from the reaction mixture. The porous silicon-immobilized enzyme was found to retain 50% of its activity, promising thermal stability up to 90°C, reusability for up to three cycles, pH stability over a broad pH of 4-9 and a shelf-life of 44 days, with an optimal hydrolytic response towards acetylthiocholine iodide at variable drug concentrations. On the basis of these findings, it was believed that the porous silicon-immobilized enzyme could be exploited as a reusable biocatalyst and for screening of acetylcholinesterase inhibitors from crude plant extracts and synthesized organic compounds. Moreover, the immobilized enzyme could offer a great deal as a viable biocatalyst in bioprocessing for the chemical and pharmaceutical industries, and bioremediation to enhance productivity and robustness. © 2016 Authors.

The determination of trace oxygen in aluminium and aluminium-silicon alloy by helium-3 activation analysis

International Nuclear Information System (INIS)

Vandecasteele, C.; Goethals, P.; Kieffer, R.; Hoste, J.

1975-01-01

The determination of oxygen in aluminium and aluminium-silicon alloy by helium-3 activation is studied. The 18 F formed from oxygen is separated by distillation followed by precipitation of leadfluorochloride. The chemical yield is determined by activation in an isotopic neutron source. Concentrations of resp. 27 and 64 ng.g -1 with a precision for a single determination of resp. 30 and 13% are found in 99.5% aluminium and in aluminium-silicon (3%) alloy. (author)

Report on achievements in fiscal 1998. Development of silicon manufacturing process to rationalize energy usage (Development of mass production technology for solar-grade silicon); 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

In the proliferation stage of solar cells, a technology is required to manufacture low-cost SOG-Si that can handle small quantity production. Development is being made on a manufacturing technology using high purity metallic silicon (99.5%) as the raw material. Considering that the subject impurities are P, B and metallic impurities (Fe, Ti and Al), a manufacturing method consisting of the following processes is being developed: metallic silicon/phosphorus removal, solidification and rough refining/boron removal, solidification and fine refining. Discussions are being advanced on phosphorus removal by using a large electron beam fusion equipment, and at the same time, the discussions are supported by fabricating and installing a large equipment intended of removing boron and the metallic impurities. Boron is removed by oxidizing it with steam. Therefore, the basic mechanism of the equipment is to spray argon plasma added with steam onto the molten silicon surface. In boron removal, diffusion of boron onto the reaction interface in the primary reaction determines the rate. A boron removal rate for B/10 to 0.1 ppm of 45 kg/h as maximum was achieved. The derived silicon has met the requirement. (NEDO)

Radiopharmaceuticals production activities in Egypt

International Nuclear Information System (INIS)

Raieh, M.

1998-01-01

Applications of radiopharmaceuticals and labelled compounds in the field of nuclear medicine in Egypt have increased so rapidly in the last few years. At present, a large number of hospitals are utilizing these radioisotopic techniques for both diagnosis and treatment. The following production activities are taking place in the Egyptian Radioisotope Production laboratories. By utilizing the research reactor a large number of radioisotopes which find wide applications in nuclear medicine were produced, such as iodine-131, phosphorus-32, sodium-24, potassium-42 and molybdenum-99 / technetium-99m generators. Gallium-67, indium-111 and iodine-123 will be produced locally after installation of the cyclotron at the end of 1998. A large number of Tc-99m based kits for diagnostic medical applications have been produced. Also, many radiopharmaceuticals labelled with iodine-131 were produced. The radioisotope production laboratory is able to supply many hospitals with the radioimmunoassay kits of the thyroid related hormones (T4, T3 and TSH). Research and development activities are taking place in the field of monoclonal antibodies and tumor markers with special consideration of AFP, CEA, PSA and βhCG. (author)

Development of a radiochemical procedure for certification of phosphorus implantation dose in silicon

International Nuclear Information System (INIS)

Paul, R.L.; Simons, D.S.

2002-01-01

The U.S. semiconductor industry relies heavily on secondary ion mass spectrometry (SIMS) for characterization of the depth distribution of dopants such as boron, arsenic, and phosphorus in silicon. To assist the industry in achieving high accuracy measurements, two Standard Reference Materials (SRMs) have been developed by NIST as SIMS calibration standards: SRM 2137 (Boron Implant in Silicon), certified by neutron depth profiling, and SRM 2134 (Arsenic Implant in Silicon), certified by instrumental neutron activation analysis. The industry is still in need of a phosphorus standard. Plans are currently underway to develop a phosphorus implant in silicon SRM, to be certified by radiochemical neutron activation analysis (RNAA). RNAA was chosen because other techniques lack the necessary sensitivity, chemical specificity and matrix independence to measure phosphorus at implantation levels. In order to assess the sensitivity, accuracy, and precision of RNAA for this work, preliminary measurements were carried out on six pieces of a phosphorus-implanted silicon wafer that was previously used in a round-robin study of SIMS measurement repeatability. Standards were prepared by depositing micro litre amounts of a standardized phosphorus solution on aluminum foil. A non-implanted silicon wafer was analysed as a blank. Samples were irradiated at a neutron fluency rate of 1 x 10 14 cm -2 s -1 to convert 31 P to 32 P, then mixed with milligram amounts of phosphorus carrier and dissolved in a mixture of nitric and hydrofluoric acids. Phosphorus was separated from the matrix by precipitation first as ammonium phosphomolybdate then as magnesium ammonium phosphate. The yield (fraction of recovered carrier) was determined gravimetrically as Mg(NH 4 )PO 4 .6H 2 O. 32 P was measured using a beta proportional counter. The measurements yielded a mean and standard deviation of (8.35 ± 0.20) x 10 14 atoms.cm -2 (relative standard deviation = 2.35 %), in agreement with both the nominal

Synthetic Promoter Library for Modulation of Actinorhodin Production in Streptomyces coelicolor A3(2)

DEFF Research Database (Denmark)

Sohoni, Sujata Vijay; Fazio, Alessandro; Workman, Christopher

2014-01-01

The objective of this study was the application of the synthetic promoter library (SPL) technology for modulation of actinorhodin production in Streptomyces coelicolor A3(2). The SPL technology was used to optimize the expression of a pathway specific positive transcriptional regulator Actll orf4...... constitutive promoter. ScoSPL20 demonstrated exceptional productivity despite having a comparatively weak expression from the promoter. Interestingly, the ScoSPL20 promoter was activated at a much earlier stage of growth compared to the wild type, demonstrating the advantage of fine-tuning and temporal tuning......, which activates the transcription of the S. coelicolor actinorhodin biosynthetic gene cluster. The native actll orf4 promoter was replaced with synthetic promoters, generating a S. coelicolor library with a broad range of expression levels of actll orf4. The resulting library was screened based...

Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

International Nuclear Information System (INIS)

Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

2005-01-01

The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

Preparation of carrier-free Phosphorus-32 from 31P(n,γ )32P reaction

International Nuclear Information System (INIS)

Rafii, H.; Arbab Zavar, H.; Avaz Moghadam, S.

1999-01-01

The phosphorus-32 is a widely used radioisotope as as tracer or radioactive source in nuclear medicine, and in many other biotechnical applications. In this paper, preparation of carrier-free P-32 with a high specific activity was studied by 31 P(n, γ) 32 P reaction. The anhydrous KH 2 PO 4 , as a target material, was irradiated in Tehran Nuclear Research Reactor with a neutron flux of 2.5x10 13 n/cm 2 .sec. The P-32 produced as a result of Szilard-Chalmers effect was isolated from the target by a strong anion exchange resin, (Dowex - X 8). The quality control of the product shows a high chemical, and radiochemical purity (>98%) and the increase specific activity depends on the irradiation time

Silicon-photonic interferometric biosensor using active phase demodulation

Science.gov (United States)

Marin, Y.; Toccafondo, V.; Velha, P.; Scarano, S.; Tirelli, S.; Nottola, A.; Jeong, Y.; Jeon, H. P.; Minunni, M.; Di Pasquale, F.; Oton, C. J.

2018-02-01

Silicon photonics is becoming a consolidated technology, mainly in the telecom/datacom sector, but with a great potential in the chemical and biomedical sensor market too, mainly due to its CMOS compatibility, which allows massfabrication of huge numbers of miniaturized devices at a very low cost per chip. Integrated photonic sensors, typically based on resonators, interferometers, or periodic structures, are easy to multiplex as the light is confined in optical waveguides. In this work, we present a silicon-photonic sensor capable of measuring refractive index and chemical binding of biomolecules on the surface, using a low-cost phase interrogation scheme. The sensor consists of a pair of balanced Mach-Zehnder interferometers with interaction lengths of 2.5 mm and 22 mm, wound to a sensing area of only 500 μm x500 μm. The phase interrogation is performed with a fixed laser and an active phase demodulation approach based on a phase generated carrier (PGC) technique using a phase demodulator integrated within the chip. No laser tuning is required, and the technique can extract the univocal phase value with no sensitivity fading. The detection only requires a photo-receiver per interferometer, analog-to-digital conversion, and simple processing performed in real-time. We present repeatable and linear refractive index measurements, with a detection limit down to 4.7·10-7 RIU. We also present sensing results on a chemically-functionalized sample, where anti-BSA to BSA (bovine serum albumin) binding curves are clearly visible for concentrations down to 5 ppm. Considering the advantages of silicon photonics, this device has great potential over several applications in the chemical/biochemical sensing industry.

V0 production with 14.5 GeV/c silicon beams

International Nuclear Information System (INIS)

Bonner, B.E.; Buchanan, J.A.; Chiou, C.N.; Clement, J.M.; Corcoran, M.D.; Kruk, J.W.; Miettinen, H.E.; Mutchler, G.S.; Nessi, M.; Nessi-Tedaldi, F.; Roberts, J.B.; Chan, C.S.; Kramer, M.A.; Etkin, A.; Foley, K.J.; Hackenburg, R.W.; Longacre, R.S.; Love, W.A.; Morris, T.W.; Platner, E.D.; Saulys, A.C.; Hallman, T.J.; Madansky, L.; Lindenbaum, S.J.

1990-01-01

This talk deals with Λ, K s 0 and bar Λ production with 14.5 GeV/c Silicon beams. Why study Λ 0 production? Because the study of strangeness is an important part of the search for Quark Gluon Plasma (QGP). Many models predict an enhancement of strangeness in a QGP as compared to the amount of strangeness produced in a superposition of nucleon-nucleon interactions. The amount of enhancement varies from model to model. Even if no QGP is detected at AGS energies using Si beams, it is important to understand the production mechanisms in quantitative detail so that standard nucleon-nucleon production mechanism can be distinguished from QGP formation. The advantage of measuring strangeness production by measuring V 0 production is that V 0 's can be identified by kinematics without the use of any special particle ID detectors. The disadvantage is that usually large aperture detectors are required. Experiment 810 has the needed large aperture. This talk describes the technique and results of V 0 production from ∼9000 interactions of Si in a 1 mil (25 micron) Au target recorded in June 1989. 13 figs., 1 tab

Neutron transmutation doping of silicon in the SAFARI-1 research reactor

International Nuclear Information System (INIS)

Louw, P.A.; Robertson, D.G.; Strydom, W.J.

1994-01-01

The SAFARI-1 research reactor has operated with an exemplary safety record since commissioning in 1965. As part of a commercialisation effort a silicon irradiation facility (SILIRAD) has been installed in the poolside region of SAFARI-1 for Neutron Transmutation Doping (NTD) of silicon. Commissioning of the facility took place in the last quarter of 1992 with a series of trial irradiations which were performed in close collaboration with Wacker Chemitronic of Germany. A methodology for the determination of irradiation times necessary to achieve the target resistivities was verified on the basis of the results from the trial irradiations. All production activities are controlled by quality assurance procedures. To date some hundred and twelve silicon ingots (103 mm diameter) have been successfully irradiated on a commercial contract basis. The observed axial and radial variations in the resistivity profile of the ingots are very small compared to the profiles associated with conventionally doped silicon and small tolerances on target resistivities are attained. In this paper an overview of the design and characterisation of SILIRAD is given and the methods applied that ensure a quality product are described. Results obtained from trial and production irradiations are presented and the envisaged future modifications to SILIRAD discussed

Neutron transmutation doping of silicon in the safari-1 research reactor

International Nuclear Information System (INIS)

Louw, P.A.; Robertson, D.G.; Strydom, W.J.

1994-01-01

The SAFARI-1 research reactor has operated with an exemplary safety record since commissioning in 1965. As part of a commercialisation effort a silicon irradiation facility (SILIRAD) has been installed in the poolside region of SAFARI-1 for Neutron Transmutation Doping (NTD) of silicon. Commissioning of the facility took place in the last quarter of 1992 with a series of trial irradiations which were performed in close collaboration the Wacker Chemitronic of Germany. A methodology for the determination of irradiation times necessary to achieve the target resistivities was verified on the basis of the results from the trial irradiations. All production activities are controlled by quality assurance procedures. To date some hundred and twelve silicon ingots (103 mm diameter) have been successfully irradiated on a commercial contract basis. The observed axial and radial variations in the resistivity profile of the ingots are very small compared to the profiles associated with conventionally doped silicon and small tolerances on target resistivities are attained. In this paper an overview of the design and characterisation of SILIRAD is given and the methods applied that ensure a quality product are described. Results obtained from trial and production irradiations are presented and the envisaged future modifications to SILIRAD discussed. 10 refs., 2 tabs., 6 figs

Estimation of sulfur in coal by fast neutron activation

International Nuclear Information System (INIS)

Das, G.C.; Bhattacharyya, P.K.

1995-01-01

A simple method is described for estimation of sulfur in coal using fast neutron activation of sulfur, i.e. 32 S(n,p) 32 P and subsequent measurement of 32 P β-activity (1.72 MeV) by a Geiger-Mueller counter. Since the sulfur content of Indian coal ranges from 0.25 to 3%, simulated samples of coal containing sulfur in the range from 0.25 to 3% and common impurities like oxides of aluminium, calcium, iron and silicon have been used to establish the method. (author). 6 refs., 2 figs., 1 tab

Silicon carbide production by Self-Propagating High Temperature (SHS) technique

International Nuclear Information System (INIS)

Lima, Eduardo de Souza; Schneider, Pedro Luiz; Mattoso, Irani Guedes; Costa, Carlos Roberto Correia da; Louro, Luis Henrique Leme

1997-01-01

Samples of silicon carbide (SiC) were synthesized from a mixture of silicon and carbon powders, using the Self-Propagating High Temperature Synthesis (SHS) technique. Three mixtures were tried, using silicon particles of the same average size but carbon particles of different average sizes. The method tried is characterized by an ignition temperature of 1450 deg C and the short duration of the synthesis ( 2-3 min). The samples were characterized by X-ray diffraction and scattering electron microscopy. (author)

Radiation cured and monomer modified silicon elastomers

International Nuclear Information System (INIS)

Eldred, R.J.

1979-01-01

A method is described for the production of a tear resistant silicone elastomer, which has improved elongation properties. This elastomer is the radiation induced reaction product of a noncured methyl vinyl silicone resin (VMQ) and uniformly dispersed therein a blend of a polyfunctional acrylic crosslinking monomer and a filler

Integrated double-sided silicon microstrip detectors

Directory of Open Access Journals (Sweden)

Perevertailo V. L.

2011-11-01

Full Text Available The problems of design, technology and manufacturing double-sided silicon microstrip detectors using standard equipment production line in mass production of silicon integrated circuits are considered. The design of prototype high-energy particles detector for experiment ALICE (CERN is presented. The parameters of fabricated detectors are comparable with those of similar foreign detectors, but they are distinguished by lesser cost.

Silicon improves seed germination and alleviates oxidative stress of bud seedlings in tomato under water deficit stress.

Science.gov (United States)

Shi, Yu; Zhang, Yi; Yao, Hejin; Wu, Jiawen; Sun, Hao; Gong, Haijun

2014-05-01

The beneficial effects of silicon on plant growth and development under drought have been widely reported. However, little information is available on the effects of silicon on seed germination under drought. In this work, the effects of exogenous silicon (0.5 mM) on the seed germination and tolerance performance of tomato (Solanum lycopersicum L.) bud seedlings under water deficit stress simulated by 10% (w/v) polyethylene glycol (PEG-6000) were investigated in four cultivars ('Jinpengchaoguan', 'Zhongza No.9', 'Houpi L402' and 'Oubao318'). The results showed that the seed germination percentage was notably decreased in the four cultivars under water stress, and it was significantly improved by added silicon. Compared with the non-silicon treatment, silicon addition increased the activities of superoxide dismutase (SOD) and catalase (CAT), and decreased the production of superoxide anion (O2·) and hydrogen peroxide (H2O2) in the radicles of bud seedlings under water stress. Addition of silicon decreased the total phenol concentrations in radicles under water stress, which might contribute to the decrease of peroxidase (POD) activity, as observed in the in vivo and in vitro experiments. The decrease of POD activity might contribute to a less accumulation of hydroxyl radical (·OH) under water stress. Silicon addition also decreased the concentrations of malondialdehyde (MDA) in the radicles under stress, indicating decreased lipid peroxidation. These results suggest that exogenous silicon could improve seed germination and alleviate oxidative stress to bud seedling of tomato by enhancing antioxidant defense. The positive effects of silicon observed in a silicon-excluder also suggest the active involvement of silicon in biochemical processes in plants. Copyright © 2014 Elsevier Masson SAS. All rights reserved.

A silicon pixel detector with routing for external VLSI read-out

International Nuclear Information System (INIS)

Thomas, S.L.; Seller, P.

1988-07-01

A silicon pixel detector with an array of 32 by 16 hexagonal pixels has been designed and is being built on high resistivity silicon. The detector elements are reverse biased diodes consisting of p-implants in an n-type substrate and are fully depleted from the front to the back of the wafer. They are intended to measure high energy ionising particles traversing the detector. The detailed design of the pixels, their layout and method of read-out are discussed. A number of test structures have been incorporated onto the wafer to enable measurements to be made on individual pixels together with a variety of active devices. The results will give a better understanding of the operation of the pixel array, and will allow testing of computer simulations of more elaborate structures for the future. (author)

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-10-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-01-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Antimicrobial activity of silica coated silicon nano-tubes (SCSNT) and silica coated silicon nano-particles (SCSNP) synthesized by gas phase condensation.

Science.gov (United States)

Tank, Chiti; Raman, Sujatha; Karan, Sujoy; Gosavi, Suresh; Lalla, Niranjan P; Sathe, Vasant; Berndt, Richard; Gade, W N; Bhoraskar, S V; Mathe, Vikas L

2013-06-01

Silica-coated, silicon nanotubes (SCSNTs) and silica-coated, silicon nanoparticles (SCSNPs) have been synthesized by catalyst-free single-step gas phase condensation using the arc plasma process. Transmission electron microscopy and scanning tunneling microscopy showed that SCSNTs exhibited a wall thickness of less than 1 nm, with an average diameter of 14 nm and a length of several 100 nm. Both nano-structures had a high specific surface area. The present study has demonstrated cheaper, resistance-free and effective antibacterial activity in silica-coated silicon nano-structures, each for two Gram-positive and Gram-negative bacteria. The minimum inhibitory concentration (MIC) was estimated, using the optical densitometric technique, and by determining colony-forming units. The MIC was found to range in the order of micrograms, which is comparable to the reported MIC of metal oxides for these bacteria. SCSNTs were found to be more effective in limiting the growth of multidrug-resistant Staphylococcus aureus over SCSNPs at 10 μg/ml (IC 50 = 100 μg/ml).

Preliminary observations on influence of dairy products on biofilm removal from silicone rubber voice prostheses in vitro

NARCIS (Netherlands)

Busscher, HJ; Free, RH; Van Weissenbruch, R; Albers, FWJ; Van der Mei, HC

We determined oropharyngeal biofilm removal from silicone rubber voice prostheses in an artificial throat after perfusion with different commercially available dairy products, including buttermilk, Lactobacillus casei Shirota fermented milk (Yakult, Yakult Netherlands BV, Almere, The Netherlands),

Process for forming a porous silicon member in a crystalline silicon member

Science.gov (United States)

Northrup, M. Allen; Yu, Conrad M.; Raley, Norman F.

1999-01-01

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

Final report. Fabrication of silicon carbide/silicon nitride nanocomposite materials and characterization of their performance; Herstellung von Siliciumcarbid/Siliciumnitrid-Nanocomposite-Werkstoffen und Charakterisierung ihrer Leistungsfaehigkeit. Abschlussbericht

Energy Technology Data Exchange (ETDEWEB)

Westerheide, R.; Woetting, G.; Schmitz, H.W.

1998-07-01

The presented activities were initiated by the well known publications of Niihara and Ishizaki. There, the strengthening and toughening of silicon nitride by nanoscaled silicon carbide particles are described. Both authors have used expensive powder production routes to achieve the optimum mechanical properties. However, for a commercial purpose these routes are not applicable due to their high cost and low reproducibility. The production route chosen by H.C. Starck together with CFI and the Fraunhofer-Institute is a powder synthesis based on the carbothermal reaction of silicon nitride as a low cost synthesis method. The investigations were performed for materials made from synthesis powders and other reference materials. The materials were densified with relatively high amounts of conventional sintering additives by gas pressure sintering. It is shown, that the postulated maxima of strength and fracture toughness behaviour at room temperature with maxima at about 5% to 25% nanoscaled SiC cannot be achieved. However, the mechanical high temperature material behaviour is as good as the behaviour of highly developed silicon nitride materials, which are produced by HIP or by consequent minimisation of the additive content with the well known difficulties to densify these materials. An overview will be given here on the powder production route and their specific problems, the mechanical properties, the microstructure and the possible effects of the microstructure, which result in an improvement of the creep resistance. (orig.)

SseK3 Is a Salmonella Effector That Binds TRIM32 and Modulates the Host's NF-κB Signalling Activity.

Directory of Open Access Journals (Sweden)

Zhe Yang

Full Text Available Salmonella Typhimurium employs an array of type III secretion system effectors that facilitate intracellular survival and replication during infection. The Salmonella effector SseK3 was originally identified due to amino acid sequence similarity with NleB; an effector secreted by EPEC/EHEC that possesses N-acetylglucoasmine (GlcNAc transferase activity and modifies death domain containing proteins to block extrinsic apoptosis. In this study, immunoprecipitation of SseK3 defined a novel molecular interaction between SseK3 and the host protein, TRIM32, an E3 ubiquitin ligase. The conserved DxD motif within SseK3, which is essential for the GlcNAc transferase activity of NleB, was required for TRIM32 binding and for the capacity of SseK3 to suppress TNF-stimulated activation of NF-κB pathway. However, we did not detect GlcNAc modification of TRIM32 by SseK3, nor did the SseK3-TRIM32 interaction impact on TRIM32 ubiquitination that is associated with its activation. In addition, lack of sseK3 in Salmonella had no effect on production of the NF-κB dependent cytokine, IL-8, in HeLa cells even though TRIM32 knockdown suppressed TNF-induced NF-κB activity. Ectopically expressed SseK3 partially co-localises with TRIM32 at the trans-Golgi network, but SseK3 is not recruited to Salmonella induced vacuoles or Salmonella induced filaments during Salmonella infection. Our study has identified a novel effector-host protein interaction and suggests that SseK3 may influence NF-κB activity. However, the lack of GlcNAc modification of TRIM32 suggests that SseK3 has further, as yet unidentified, host targets.

Porous Silicon Nanowires

Science.gov (United States)

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing

Science.gov (United States)

Abadli, S.; Mansour, F.; Perrera, E. Bedel

We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.

Silicon is in short supply for the growth in solar cell production

International Nuclear Information System (INIS)

Halvorsen, Finn

2003-01-01

Polycrystalline silicon will be in short supply by 2006. This is the conclusion of two independent studies, one done for the European Union and one for the Photovoltaic Industry Association. The most important reason is the rapid growth in the solar cell market, which is expected to be about 15 per cent per year until 2010. If so, the world's solar cell manufacturers will need 8,000 tonnes of pure silicon at that time. This growth presupposes that the price of silicon does not rise, but it readily might. Because the general situation for the semiconductor industry has been difficult, silicon has been readily available to the manufacturers of solar cells in recent years. This is true of discard, which has always been used for solar cells, but also of silicon that was intended to become microprocessors, storage chips and other advanced semiconductor devices. As the semiconductor market improves, the amount of silicon from this source will shrink. Manufacturers of solar cells cannot afford to pay as much as the semiconductor manufacturers, and some consider making solar cell grade silicon themselves

Room Temperature Reactivity Of Silicon Nanocrystals With Solvents: The Case Of Ketone And Hydrogen Production From Secondary Alcohols: Catalysis?

KAUST Repository

El Demellawi, Jehad K.; Holt, Christopher; Abou-Hamad, Edy; Al-Talla, Zeyad; Saih, Youssef; Chaieb, Saharoui

2015-01-01

Although silicon nanoparticles dispersed in liquids are used in various applications ranging from bio-labeling to hydrogen production, their reactivities with their solvents and their catalytic properties re-main still unexplored. Here, we discovered that, because of their surface structures and mechanical strain, silicon nanoparticles react strongly with their solvents and may act as catalysts for the dehydrogenation, at room temperature, of secondary alcohols (e.g. isopropanol) to ketones and hydrogen. This catalytic reaction was followed by gas chromatography, pH measurements, mass spectroscopy and solidstate NMR. This discovery provides new understanding of the role played by silicon nanoparticles, and nanosilicon in general, in their stability in solvents in general as well as being candidates in catalysis.

Room Temperature Reactivity Of Silicon Nanocrystals With Solvents: The Case Of Ketone And Hydrogen Production From Secondary Alcohols: Catalysis?

KAUST Repository

El Demellawi, Jehad K.

2015-05-29

Although silicon nanoparticles dispersed in liquids are used in various applications ranging from bio-labeling to hydrogen production, their reactivities with their solvents and their catalytic properties re-main still unexplored. Here, we discovered that, because of their surface structures and mechanical strain, silicon nanoparticles react strongly with their solvents and may act as catalysts for the dehydrogenation, at room temperature, of secondary alcohols (e.g. isopropanol) to ketones and hydrogen. This catalytic reaction was followed by gas chromatography, pH measurements, mass spectroscopy and solidstate NMR. This discovery provides new understanding of the role played by silicon nanoparticles, and nanosilicon in general, in their stability in solvents in general as well as being candidates in catalysis.

Hardware design for the production of NTD silicon in the Advanced Test Reactor

International Nuclear Information System (INIS)

Schell, M.J.

1984-01-01

The Advanced Test Reactor (ATR) is a 250-MW(t) materials testing and nuclear research facility operated for EG and G Idaho, Inc. The unique capabilities of the ATR can be readily adapted via hardware to produce large quantitities of large-diameter (20 cm plus) doped silicon crystals. Conservative estimates place the production capability in excess of 15 metric tons per year. The proposed hardware is based upon a closed-loop, hydraulic-shuttle tube system

Improving bondability to RTV silicone elastomer using rf-activated gas

International Nuclear Information System (INIS)

Bellah, J.L.

1979-05-01

The effects of an rf-activated gas (plasma) on the bondability to RTV silicone elastomer were studied. Processing guidelines were developed, and a method was sought to satisfactorily bond RTV to the walls of a machined aluminum casting and to provide a surface on the RTV which would best accept bonding to an epoxy encapsulant. Processing parameters, such as gas type and flow rate, reaction chamber pressure, and rf power level, were developed

Elaboration and characterization of metallurgical silicon for photovoltaic applications

International Nuclear Information System (INIS)

Barbouche, M; Hajji, M; Krout, F; Ezzaouia, H

2015-01-01

There is a small quantity of participants in the global market of silicon, mainly from the developed countries. It should be noticed also that production of metallurgical silicon Mg-Si is among the most important steps to produce solar grade silicon and photovoltaic panels. Therefore, in this paper we focused on the growth of Mg-Si by carbothermal reduction of silica. An investigation was made using FT-IR characterization to study the effect of process conditions (temperature, atmosphere, duration) in Mg-Si production. Raman spectroscopy was used to investigate the produced Mg-Si. Based on these results, we established a pilot line production of metallurgical silicon at the 'CRTEn' in Tunisia

Mass production of silicon pore optics for IXO and ATHENA

Science.gov (United States)

Wille, Eric; Wallace, Kotska; Bavdaz, Marcos

2011-09-01

Silicon Pore Optics (SPO) provide high angular resolution with low area density as required for the International X-ray Observatory (IXO) or the Advanced Telescope for High Energy Astrophysics (ATHENA). The baseline for both telescopes consists of populating the mirror assembly with hundreds of SPO mirror modules. During the development of the process steps of the SPO technology, specific requirements of a future mass production have been considered right from the beginning. The manufacturing methods heavily utilise off-the-shelf equipment from the semiconductor industry, robotic automation and parallel processing. This allows to upscale the present production flow in a cost effective way, to produce hundreds of mirror modules per year. Considering manufacturing predictions based on the current technology status, we present an analysis of the time and resources required for a future flight programme. This includes the full production process starting with Si wafers up to the integration of the mirror modules. We present the times required for the individual process steps and identify the equipment required to produce several mirror modules per day. A preliminary timeline for building and commissioning the required infrastructure, and for flight model production of about 500 (ATHENA) and 2000 (IXO) mirror modules, is presented.

Design and characterization of a 32P-patch for the treatment of skin diseases. Studies of its application as a betatherapeutic agent for modulated brachytherapy

International Nuclear Information System (INIS)

Salgueiro, M. J.

2010-01-01

The purpose of this work was to design and evaluate a 32 P-patch for contact brachytherapy of skin diseases. [ 32 P]-chromic phosphate in combination with silicone was employed to produce the designed 32 P patch. Radiopharmaceutical production was carried out in accordance with radiological safety issues. To verify the safety of the 32 P-patch, stability studies in vitro and in vivo were carried out to evaluate the leakage of radioactivity and autoradiographic studies were performed to evaluate the dose homogeneity and shielding. Therapeutic efficacy in animal models of skin cancer as well as in cats with squamous cell carcinoma was evaluated. These results showed that independently of the considered model, tumor growth was arrested and complete regressions were achieved in some other cases. Radiation doses were estimated with equations derived from the MIRD DOSE scheme and compared with Monte Carlo β doses. Some advantages of the designed 32 P-patch allow its use for conformal and modulated radiotherapy such as the possibility of modifying the activity concentration of the patch, the limited range of β- radiation, dose deep distribution and combination with bolus. This 32 P-patch which is easy to prepare and control may be used in the treatment of skin diseases alone or in combination with other treatment modalities. (author)

Indolo[3,2-c]cinnolines with antiproliferative, antifungal, and antibacterial activity.

Science.gov (United States)

Barraja, P; Diana, P; Lauria, A; Passannanti, A; Almerico, A M; Minnei, C; Longu, S; Congiu, D; Musiu, C; La Colla, P

1999-08-01

A series of indolo[3,2-c]cinnoline derivatives was prepared and tested to evaluate their biological activity. Most of them inhibited the proliferation of leukemia, lymphoma and solid tumor-derived cell lines at micromolar concentrations, whereas none of the compounds were active against HIV-1. With the exception of 7g, all title compounds showed antibacterial activity against gram-positive bacteria, being up to 200 times more potent than the reference drug streptomycin. Some of the indolo[3,2-c]cinnolines were also endowed with good antifungal activity, particularly against Criptococcus neoformans.

Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

Directory of Open Access Journals (Sweden)

Eugenijus SHATKOVSKIS

2012-09-01

Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

Assessment of activation products in the Savannah River Site environment

International Nuclear Information System (INIS)

Carlton, W.H.; Denham, M.

1996-07-01

This document assesses the impact of radioactive activation products released from SRS facilities since the first reactor became operational late in 1953. The isotopes reported here are those whose release resulted in the highest dose to people living near SRS: 32 P, 51 Cr, 60 C, and 65 Zn. Release pathways, emission control features, and annual releases to the aqueous and atmospheric environments are discussed. No single incident has resulted in a major acute release of activation products to the environment. The releases were the result of normal operations of the reactors and separations facilities. Releases declined over the years as better controls were established and production was reduced. The overall radiological impact of SRS activation product atmospheric releases from 1954 through 1994 on the offsite maximally exposed individual can be characterized by a total dose of 0.76 mrem. During the same period, such an individual received a total dose of 14,400 mrem from non-SRS sources of ionizing radiation present in the environment. SRS activation product aqueous releases between 1954 and 1994 resulted in a total dose of 54 mrem to the offsite maximally exposed individual. The impact of SRS activation product releases on offsite populations also has been evaluated

Semiconductor Grade, Solar Silicon Purification Project. [photovoltaic solar energy conversion

Science.gov (United States)

Ingle, W. M.; Rosler, R. S.; Thompson, S. W.; Chaney, R. E.

1979-01-01

A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.

Numerical Simulation Of Silicon-Ribbon Growth

Science.gov (United States)

Woda, Ben K.; Kuo, Chin-Po; Utku, Senol; Ray, Sujit Kumar

1987-01-01

Mathematical model includes nonlinear effects. In development simulates growth of silicon ribbon from melt. Takes account of entire temperature and stress history of ribbon. Numerical simulations performed with new model helps in search for temperature distribution, pulling speed, and other conditions favoring growth of wide, flat, relatively defect-free silicon ribbons for solar photovoltaic cells at economically attractive, high production rates. Also applicable to materials other than silicon.

Analyses and characterization of fossil carbonaceous materials for silicon production

Energy Technology Data Exchange (ETDEWEB)

Myrvaagnes, Viktor

2008-01-15

Production of high silicon alloys is carried out in submerged arc furnaces by reduction of silicon bearing oxides (typically quartz) with carbon materials. Carbonaceous materials like coal, coke, charcoal and woodchips are commonly used as reduction materials in the process. Primarily based on historical prices of charcoal compared to fossil reduction materials, the Norwegian Ferroalloy Industry has mostly been using coal and coke (char) as the source of carbon. From a process point of view, the most important role of the carbonaceous material is to react with SiO gas to produce SiC. The ability of the reduction materials to react with SiO gas can be measured and the value is recognized as the reactivity of the carbon source. Reactivity is one of the most important parameters in the smelting process and is commonly acknowledged to strongly affect both productivity and specific energy consumption. The main objectives of this work has been to establish methods to characterize the material properties of fossil carbonaceous reduction materials used in the silicon process and to evaluated how these properties affect the reactivity towards SiO gas. In order to accomplish these objectives, three run of mine (ROM) single seam coals which are particularly well suited for ferroalloy production were selected. Two Carboniferous coals from USA (Blue Gem) and Poland (Staszic) with similar rank, but significantly different composition as well as a Permian coal from Australia (Peak Downs) have been characterized by chemical- and petrographical methods. Blue Gem is a homogeneous coal, low in mineral inclusions and macerals of the inertinite group and determined to have a random vitrinite reflectance of 0.71 %. Staszic has a similar reflectance of vitrinite (0.72 %), but is determined to be a very inhomogeneous coal with both inertinite macerals and minerals embedded in the vitrinite matrix. Peak Downs has a random reflectance of vitrinite of 1.32 % and is hence the coal sample of

MeV ion induced damage production and accumulation in silicon

International Nuclear Information System (INIS)

Suzuki, Motoyuki; Okazaki, Makoto; Shin, Kazuo; Takagi, Ikuji; Yoshida, Koji

1993-01-01

Measurement and analysis were made for radiation damages in silicon induced by MeV ions. A single crystal silicon was bombarded by 800 keV O + and 700 keV Si + with the dose from 2x10 15 up to 8x10 15 cm -2 . And defects induced by the ion bombardments were observed by the channeling method. Some new modifications were made to the analysis of the channeling RBS spectrum so that the accuracy of the unfolded defect distribution may be improved. A new model of point-defect clustering and amorphous formation was proposed, which well reproduced the observed defect distribution in silicon. (author)

Material Properties of Laser-Welded Thin Silicon Foils

Directory of Open Access Journals (Sweden)

M. T. Hessmann

2013-01-01

Full Text Available An extended monocrystalline silicon base foil offers a great opportunity to combine low-cost production with high efficiency silicon solar cells on a large scale. By overcoming the area restriction of ingot-based monocrystalline silicon wafer production, costs could be decreased to thin film solar cell range. The extended monocrystalline silicon base foil consists of several individual thin silicon wafers which are welded together. A comparison of three different approaches to weld 50 μm thin silicon foils is investigated here: (1 laser spot welding with low constant feed speed, (2 laser line welding, and (3 keyhole welding. Cross-sections are prepared and analyzed by electron backscatter diffraction (EBSD to reveal changes in the crystal structure at the welding side after laser irradiation. The treatment leads to the appearance of new grains and boundaries. The induced internal stress, using the three different laser welding processes, was investigated by micro-Raman analysis. We conclude that the keyhole welding process is the most favorable to produce thin silicon foils.

Back-contacted back-junction silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Mangersnes, Krister

2010-10-15

Conventional silicon solar cells have a front-side contacted emitter. Back-contacted back-junction (BC-BJ) silicon solar cells, on the other hand, have both the complete metallization and the active diffused regions of both polarities on the backside. World-record efficiencies have already been demonstrated for this type of cell design in production, both on cell and module level. However, the production of these cells is both complex and costly, and a further cost reduction in fabrication is needed to make electricity from BC-BJ silicon solar cells cost-competitive with electricity on the grid ('grid-parity'). During the work with this thesis, we have investigated several important issues regarding BC-BJ silicon solar cells. The aim has been to reduce production cost and complexity while at the same time maintaining, or increasing, the already high conversion efficiencies demonstrated elsewhere. This has been pursued through experimental work as well as through numerical simulations and modeling. Six papers are appended to this thesis, two of which are still under review in scientific journals. In addition, two patents have been filed based on the work presented herein. Experimentally, we have focused on investigating and optimizing single, central processing steps. A laser has been the key processing tool during most of the work. We have used the same laser both to structure the backside of the cell and to make holes in a double-layer of passivating amorphous silicon and silicon oxide, where the holes were opened with the aim of making local contact to the underlying silicon. The processes developed have the possibility of using a relatively cheap and industrially proven laser and obtain results better than most state-of-the-art laser technologies. During the work with the laser, we also developed a thermodynamic model that was able to predict the outcome from laser interaction with amorphous and crystalline silicon. Alongside the experimental work, we

Novel silicone-based polymer containing active methylene designed for the removal of indoor formaldehyde

Energy Technology Data Exchange (ETDEWEB)

Niu, Song, E-mail: niusong84@163.com; Yan, Hongxia, E-mail: hongxiayan@nwpu.edu.cn

2015-04-28

Highlights: • A novel silicone-based polymer with active methylene was explored. • Surface tension of liquid paints could be lowered using the polymer. • The polymer was easy to migrate toward the air-coating interface. • Free HCHO could effectively be removed using the polymer. • A lights on HCHO reduction without complicated preparation procedure was shielded. - Abstract: Indoor air pollution is caused inevitably due to complicated home decoration, in which formaldehyde is one of the most typical pollutants. It will be a convenient, economical and effective strategy to remove indoor formaldehyde if imparting a feature of formaldehyde removal to decorative coatings. We have successfully explored a novel silicone-based polymer containing active methylene used as a formaldehyde absorbent in coatings via a straightforward transesterification process using inexpensive and easily available chemicals. The polymer has been characterized by {sup 13}C NMR, FTIR, GC and GPC. Formaldehyde removal capacity of the coating films containing different contents of the polymer has been investigated. The results indicated that coatings incorporating 4 wt% of the polymer could make the coating films exhibit significant improvement on formaldehyde removal including purificatory performance (>85%) and durability of purificatory effect (>60%), compared to those consisting of absorbents without any silicon, and improve yellowing resistance performance, while other properties, such as gloss, adhesion, pencil hardness, flexibility and impact resistance, were kept almost unaffected. The chemical absorption process of the silicone-based polymer filled in interior decorative coatings is demonstrated as a promising technology to purify indoor formaldehyde and thus can reduce the harm to individuals.

Monitoring of the morphologic reconstruction of deposited ablation products in laser irradiation of silicon

Directory of Open Access Journals (Sweden)

Vlasova M.

2008-01-01

Full Text Available Using electron microscopy, atomic force microscopy, X-ray microanalysis, and IR spectroscopy, it was established that, in the regime of continuous laser irradiation of silicon at P = 170 W in different gaseous atmospheres with an oxygen impurity, SiOx composite films with a complex morphology form. The main components of ablation products are clusters that form during flight of ablation products and as a result of separation of SiOx-clusters from the zone of the irradiation channel. The roughness and density of the films depend on the heating temperature of the target surface and the type of deposited clusters.

Graphene synthesized on porous silicon for active electrode material of supercapacitors

Science.gov (United States)

Su, B. B.; Chen, X. Y.; Halvorsen, E.

2016-11-01

We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm2 while that without catalyst layer was 145μF/cm2. We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors.

Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives.

Science.gov (United States)

Casalino, Maurizio; Coppola, Giuseppe; Iodice, Mario; Rendina, Ivo; Sirleto, Luigi

2010-01-01

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

Directory of Open Access Journals (Sweden)

Luigi Sirleto

2010-11-01

Full Text Available Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

Colloidal characterization of silicon nitride and silicon carbide

Science.gov (United States)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

On-chip all-optical wavelength conversion of multicarrier, multilevel modulation (OFDM m-QAM) signals using a silicon waveguide.

Science.gov (United States)

Li, Chao; Gui, Chengcheng; Xiao, Xi; Yang, Qi; Yu, Shaohua; Wang, Jian

2014-08-01

We report on-chip all-optical wavelength conversion of multicarrier multilevel modulation signals in a silicon waveguide. Using orthogonal frequency-division multiplexing (OFDM) combined with advanced multilevel quadrature amplitude modulation (QAM) signals (i.e., OFDM m-QAM), we experimentally demonstrate all-optical wavelength conversions of 3.2 Gbaud/s OFDM 16/32/64/128-QAM signals based on the degenerate four-wave mixing (FWM) nonlinear effect in a silicon waveguide. The measured optical signal-to-noise ratio (OSNR) penalties of wavelength conversion are ∼3  dB for OFDM 16-QAM and ∼4  dB for OFDM 32-QAM at 7% forward error correction (FEC) threshold and ∼3.5  dB for OFDM 64-QAM and ∼4.5  dB for OFDM 128-QAM at 20% FEC threshold. The observed clear constellations of converted idlers imply favorable performance obtained for silicon-waveguide-based OFDM 16/32/64/128-QAM wavelength conversions.

Electromechanical stability of electro-active silicone filled with high permittivity particles undergoing large deformation

International Nuclear Information System (INIS)

Liu, Liwu; Liu, Yanju; Zhang, Zhen; Leng, Jinsong; Li, Bo

2010-01-01

In this paper, an expression for the permittivity of electro-active silicone undergoing large deformation with high permittivity particles filled uniformly has been proposed. Two expressions are proposed for the permittivity, one based on experimental tests and the other based on the theory of composite material. By applying the thermodynamic model incorporating linear dielectric permittivity and nonlinear hyperelastic performance, the mechanical performance and electromechanical stability of the coupling system constituted by silicone filled with PMN–PT have been studied. The results show that the critical electric field decreases, namely the stability performance of the system declines when the content of PMN–PT c(v) increases and the electrostrictive coefficients increase. The results are beneficial for us to understand deeply the influence of the filled particle on the stability performance of silicone and to guide the design and manufacture of actuators and sensors based on dielectric elastomers

1366 Project Silicon: Reclaiming US Silicon PV Leadership

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Adam [1366 Technologies, Bedford, MA (United States)

2016-02-16

1366 Technologies’ Project Silicon addresses two of the major goals of the DOE’s PV Manufacturing Initiative Part 2 program: 1) How to reclaim a strong silicon PV manufacturing presence and; 2) How to lower the levelized cost of electricity (“LCOE”) for solar to $0.05-$0.07/kWh, enabling wide-scale U.S. market adoption. To achieve these two goals, US companies must commercialize disruptive, high-value technologies that are capable of rapid scaling, defensible from foreign competition, and suited for US manufacturing. These are the aims of 1366 Technologies Direct Wafer ™ process. The research conducted during Project Silicon led to the first industrial scaling of 1366’s Direct Wafer™ process – an innovative, US-friendly (efficient, low-labor content) manufacturing process that destroys the main cost barrier limiting silicon PV cost-reductions: the 35-year-old grand challenge of making quality wafers (40% of the cost of modules) without the cost and waste of sawing. The SunPath program made it possible for 1366 Technologies to build its demonstration factory, a key and critical step in the Company’s evolution. The demonstration factory allowed 1366 to build every step of the process flow at production size, eliminating potential risk and ensuring the success of the Company’s subsequent scaling for a 1 GW factory to be constructed in Western New York in 2016 and 2017. Moreover, the commercial viability of the Direct Wafer process and its resulting wafers were established as 1366 formed key strategic partnerships, gained entry into the $8B/year multi-Si wafer market, and installed modules featuring Direct Wafer products – the veritable proving grounds for the technology. The program also contributed to the development of three Generation 3 Direct Wafer furnaces. These furnaces are the platform for copying intelligently and preparing our supply chain – large-scale expansion will not require a bigger machine but more machines. SunPath filled the

Light-Ion Production in the Interaction of 96 MeV Neutrons with Silicon

International Nuclear Information System (INIS)

Tippawan, U.; Dangtip, S.; Pomp, S.; Atac, A.; Bergenwall, B.; Blomgren, J.; Hildebrand, A.; Johansson, C.; Klug, J.; Mermod, P.; Oesterlund, M.; Nilsson, L.; Elmgren, K.; Olsson, N.; Jonsson, O.; Prokofiev, A.V.; Renberg, P.-U.; Nadel-Turonski, P.; Corcalciuc, V.; Watanabe, Y.

2005-01-01

Radiation effects induced by terrestrial cosmic rays in microelectronics, on board aircrafts as well as at sea level, have recently attracted much attention. The most important particle radiation is due to spallation neutrons, created in the atmosphere by cosmic-ray protons. When, e.g., an electronic memory circuit is exposed to neutron radiation, charged particles can be produced in a nuclear reaction. The charge released by ionization can cause a flip of the memory content in a bit, which is called a single-event upset (SEU). This induces no hardware damage to the circuit, but unwanted re-programming of memories, CPUs, etc., can have consequences for the reliability, and ultimately also for the safety of the system.Data on energy and angular distributions of the secondary particles produced by neutrons in silicon nuclei are essential input for analyses and calculation of SEU rate. In this work, double-differential cross sections of inclusive light-ion (p, d, t, 3He and α) production in silicon, induced by 96 MeV neutrons, are presented. Energy distributions are measured at eight laboratory angles from 20 deg. to 160 deg. in steps of 20 deg. Deduced energy-differential and production cross sections are reported as well. Experimental cross sections are compared to theoretical reaction model calculations and existing experimental data in the literature

Graphene synthesized on porous silicon for active electrode material of supercapacitors

International Nuclear Information System (INIS)

Su, B B; Chen, X Y; Halvorsen, E

2016-01-01

We present graphene synthesized by chemical vapour deposition under atmospheric pressure on both porous nanostructures and flat wafers as electrode scaffolds for supercapacitors. A 3nm thin gold layer was deposited on samples of both porous and flat silicon for exploring the catalytic influence during graphene synthesis. Micro-four-point probe resistivity measurements revealed that the resistivity of porous silicon samples was nearly 53 times smaller than of the flat silicon ones when all the samples were covered by a thin gold layer after the graphene growth. From cyclic voltammetry, the average specific capacitance of porous silicon coated with gold was estimated to 267 μF/cm 2 while that without catalyst layer was 145μF/cm 2 . We demonstrated that porous silicon based on nanorods can play an important role in graphene synthesis and enable silicon as promising electrodes for supercapacitors. (paper)

Annealing effects on recombinative activity of nickel at direct silicon bonded interface

International Nuclear Information System (INIS)

Kojima, Takuto; Ohshita, Yoshio; Yamaguchi, Masafumi

2015-01-01

By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi 2

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 April 2002--30 September 2003 (Revised)

Energy Technology Data Exchange (ETDEWEB)

Wohlgemuth, J.; Shea, S. P.

2004-04-01

The goal of BP Solar's Crystalline PVMaT program is to improve the present polycrystalline silicon manufacturing facility to reduce cost, improve efficiency, and increase production capacity. Key components of the program are: increasing ingot size; improving ingot material quality; improving material handling; developing wire saws to slice 100 ..mu..m thick silicon wafers on 200 ..mu..m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100 ..mu..m thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50 MW (annual nominal capacity) green-field Mega plant factory model template based on this new thin polycrystalline silicon technology; and facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

Complications of cataract surgery in eyes filled with silicone oil.

Science.gov (United States)

Kanclerz, Piotr; Grzybowski, Andrzej; Schwartz, Stephen G; Lipowski, Paweł

2018-03-01

The aim of the study was to evaluate complications of cataract surgery in eyes filled with silicone oil. This retrospective, noncomparative, consecutive case series analyzed medical files of patients with eyes filled with silicone oil undergoing cataract surgery. Phacoemulsification with posterior chamber intraocular lens implantation was conducted with or without concurrent silicone oil removal. In this study, 121 eyes of 120 patients were included. In 32 eyes (26.4%) with evident silicone oil microemulsification or silicone oil-associated open-angle glaucoma, silicone oil was removed prior to phacoemulsification through a pars plana incision and no cases of posterior capsular rupture occurred during the subsequent cataract surgery. In the remaining 89 eyes, phacoemulsification was performed with silicone oil in the vitreous cavity. In these eyes, the rate of posterior capsular rupture was 9/89 (10.1%) and the rate of silicone oil migration into the anterior chamber through an apparently intact posterior capsule was 5/89 (5.6%). In 94 eyes (77.7%), an intraocular lens was inserted into the capsular bag, in 3 eyes (2.5%) into the sulcus, and in 1 eye (0.8%) a transscleral suturing was performed. In this series, complications related to the silicone oil were not uncommon during cataract surgery. In the majority of patients without evident silicone oil microemulsification or silicone oil-associated open-angle glaucoma, cataract surgery and posterior chamber intraocular lens implantation were performed while leaving the silicone oil in place.

Synthesis of Novel Reactive Disperse Silicon-Containing Dyes and Their Coloring Properties on Silicone Rubbers

Directory of Open Access Journals (Sweden)

Ning Yu

2018-01-01

Full Text Available Novel red and purple reactive disperse silicon-containing dyes were designed and synthesized using p-nitroaniline and 6-bromo-2,4-dinitro-aniline as diazonium components, the first condensation product of cyanuric chloride and 3-(N,N-diethylamino-aniline as coupling component, and 3-aminopropylmethoxydimethylsilane, 3-aminopropylmethyldimethoxysilane, and 3-aminopropyltrimethoxysilane as silicone reactive agents. These dyes were characterized by UV-Vis, 1H-NMR, FT-IR, and MS. The obtained reactive disperse silicon-containing dyes were used to color silicone rubbers and the color fastness of the dyes were evaluated. The dry/wet rubbing and washing fastnesses of these dyes all reached 4–5 grade and the sublimation fastness was also above 4 grade, indicating outstanding performance in terms of color fastness. Such colored silicone rubbers showed bright and rich colors without affecting its static mechanical properties.

Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

International Nuclear Information System (INIS)

Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

2000-01-01

Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

Synthesis, Antibacterial and Antitubercular Activities of Some 5H-Thiazolo[3,2-a]pyrimidin-5-ones and Sulfonic Acid Derivatives

Directory of Open Access Journals (Sweden)

Dong Cai

2015-09-01

Full Text Available A series of 5H-thiazolo[3,2-a]pyrimidin-5-ones were synthesized by the cyclization reactions of S-alkylated derivatives in concentrated H2SO4. Upon treatment of S-alkylated derivatives at different temperatures, intramolecular cyclization to 7-(substituted phenylamino-5H-thiazolo[3,2-a]pyrimidin-5-ones or sulfonation of cyclized products to sulfonic acid derivatives occurred. The structures of the target compounds were confirmed by IR, 1H-NMR, 13C-NMR and HRMS studies. The compounds were evaluated for their preliminary in vitro antibacterial activity against some Gram-positive and Gram-negative bacteria and screened for antitubercular activity against Mycobacterium tuberculosis by the broth dilution assay method. Some compounds showed good antibacterial and antitubercular activities.

Industrial production and purification of 32P by sulfur irradiation with partially moderated neutron fluxes and target melting

International Nuclear Information System (INIS)

Alanis, J.; Navarrete, M.

2007-01-01

Target purification of S α is carried out by distillation at 444±2 deg C under N atmosphere and diluting the vapors in CS 2 . The solution is filtered through fiberglass, Teflon and cellulose to obtain S α by CS 2 evaporation. Once 30 g of this target are irradiated with fast neutron fluxes from 4.5 to 7.4 x 10 12 n x cm -2 x s -1 from 6 to 12 hours, the nuclear reaction 32 S(n,p) 32 P takes place. So, the irradiated S α sample is placed in a Pyrex container situated inside a furnace as the most important piece of equipment in one aluminum and Lucite glove box. The distillation of irradiated sulfur takes place at 444±2 deg C under N atmosphere during 1-2 hours. The vapors are connected to a sulfur diluter containing 20% CS 2 aqueous solution, followed by an activated carbon filter and the two similar additional sulfur diluters. Once cooled, the distillation chamber keeps the radioactive, carrier-free 32 P stuck to the wall. Then 25-50 ml of 0.1N HCl acid was injected by suction and heated again at 110±2 deg C during 1 hour. The corresponding chemical reaction takes place and the labeled H 3 32 PO 4 solution is produced. In such a way, industrial production of 32 P labeled molecules has started in Mexico, with an initial production of 3700-5550 MBq per week. (author)

Floating Silicon Method

Energy Technology Data Exchange (ETDEWEB)

Kellerman, Peter

2013-12-21

The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

Electrochemical Fabrication of Nanostructures on Porous Silicon for Biochemical Sensing Platforms.

Science.gov (United States)

Ko, Euna; Hwang, Joonki; Kim, Ji Hye; Lee, Joo Heon; Lee, Sung Hwan; Tran, Van-Khue; Chung, Woo Sung; Park, Chan Ho; Choo, Jaebum; Seong, Gi Hun

2016-01-01

We present a method for the electrochemical patterning of gold nanoparticles (AuNPs) or silver nanoparticles (AgNPs) on porous silicon, and explore their applications in: (1) the quantitative analysis of hydroxylamine as a chemical sensing electrode and (2) as a highly sensitive surface-enhanced Raman spectroscopy (SERS) substrate for Rhodamine 6G. For hydroxylamine detection, AuNPs-porous silicon can enhance the electrochemical oxidation of hydroxylamine. The current changed linearly for concentrations ranging from 100 μM to 1.32 mM (R(2) = 0.995), and the detection limit was determined to be as low as 55 μM. When used as SERS substrates, these materials also showed that nanoparticles decorated on porous silicon substrates have more SERS hot spots than those decorated on crystalline silicon substrates, resulting in a larger SERS signal. Moreover, AgNPs-porous silicon provided five-times higher signal compared to AuNPs-porous silicon. From these results, we expect that nanoparticles decorated on porous silicon substrates can be used in various types of biochemical sensing platforms.

Silicon Telescope Detectors

CERN Document Server

Gurov, Yu B; Sandukovsky, V G; Yurkovski, J

2005-01-01

The results of research and development of special silicon detectors with a large active area ($> 8 cm^{2}$) for multilayer telescope spectrometers (fulfilled in the Laboratory of Nuclear Problems, JINR) are reviewed. The detector parameters are listed. The production of totally depleted surface barrier detectors (identifiers) operating under bias voltage two to three times higher than depletion voltage is described. The possibility of fabrication of lithium drifted counters with a very thin entrance window on the diffusion side of the detector (about 10--20 $\\mu$m) is shown. The detector fabrication technique has allowed minimizing detector dead regions without degradation of their spectroscopic characteristics and reliability during long time operation in charge particle beams.

Radiation damage study for silicon calorimetry: Summary of first year's activity

International Nuclear Information System (INIS)

Russ, J.S.

1988-01-01

In the first contract year of this activity at Carnegie-Mellon we have had two major objectives. These were to devise and test a non-intrusive means to measure the energy and spatial profiles of the neutrons generated in a hadronic cascade at high energy; and to study the calibration systematics of silicon diode detectors as a prelude to their evaluation for SSC calorimetry. These objectives have been carried out, as are described in this paper. In addition we have recoded the ORNL detector simulation program HETC to operate on a VAX and are working on the conversion of the low energy neutron transport program MORSE. These programs are used heavily at Oak Ridge (Gabriel and coworkers) for cascade studies. For silicon calorimetry one wants to have more control over the energy deposition routines, especially in MORSE. Unfortunately, MORSE is heavily-laden with machine code, and its conversion is going slowly. 11 refs., 5 figs

Epitaxial silicon semiconductor detectors, past developments, future prospects

International Nuclear Information System (INIS)

Gruhn, C.R.

1976-01-01

A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

Mapping Local Cytosolic Enzymatic Activity in Human Esophageal Mucosa with Porous Silicon Nanoneedles.

Science.gov (United States)

Chiappini, Ciro; Campagnolo, Paola; Almeida, Carina S; Abbassi-Ghadi, Nima; Chow, Lesley W; Hanna, George B; Stevens, Molly M

2015-09-16

Porous silicon nanoneedles can map Cathepsin B activity across normal and tumor human esophageal mucosa. Assembling a peptide-based Cathepsin B cleavable sensor over a large array of nano-needles allows the discrimination of cancer cells from healthy ones in mixed culture. The same sensor applied to tissue can map Cathepsin B activity with high resolution across the tumor margin area of esophageal adenocarcinoma. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

InP membrane on silicon integration technology

NARCIS (Netherlands)

Smit, M.K.

2013-01-01

Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.

Annealing effects on recombinative activity of nickel at direct silicon bonded interface

Energy Technology Data Exchange (ETDEWEB)

Kojima, Takuto, E-mail: tkojima@toyota-ti.ac.jp; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya, 468-8511 (Japan)

2015-09-15

By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi{sub 2}.

Low-cost carbon-silicon nanocomposite anodes for lithium ion batteries.

Science.gov (United States)

Badi, Nacer; Erra, Abhinay Reddy; Hernandez, Francisco C Robles; Okonkwo, Anderson O; Hobosyan, Mkhitar; Martirosyan, Karen S

2014-01-01

The specific energy of the existing lithium ion battery cells is limited because intercalation electrodes made of activated carbon (AC) materials have limited lithium ion storage capacities. Carbon nanotubes, graphene, and carbon nanofibers are the most sought alternatives to replace AC materials but their synthesis cost makes them highly prohibitive. Silicon has recently emerged as a strong candidate to replace existing graphite anodes due to its inherently large specific capacity and low working potential. However, pure silicon electrodes have shown poor mechanical integrity due to the dramatic expansion of the material during battery operation. This results in high irreversible capacity and short cycle life. We report on the synthesis and use of carbon and hybrid carbon-silicon nanostructures made by a simplified thermo-mechanical milling process to produce low-cost high-energy lithium ion battery anodes. Our work is based on an abundant, cost-effective, and easy-to-launch source of carbon soot having amorphous nature in combination with scrap silicon with crystalline nature. The carbon soot is transformed in situ into graphene and graphitic carbon during mechanical milling leading to superior elastic properties. Micro-Raman mapping shows a well-dispersed microstructure for both carbon and silicon. The fabricated composites are used for battery anodes, and the results are compared with commercial anodes from MTI Corporation. The anodes are integrated in batteries and tested; the results are compared to those seen in commercial batteries. For quick laboratory assessment, all electrochemical cells were fabricated under available environment conditions and they were tested at room temperature. Initial electrochemical analysis results on specific capacity, efficiency, and cyclability in comparison to currently available AC counterpart are promising to advance cost-effective commercial lithium ion battery technology. The electrochemical performance observed for

Synthesis, Characterization and Optical Constants of Silicon Oxycarbide

Directory of Open Access Journals (Sweden)

Memon Faisal Ahmed

2017-01-01

Full Text Available High refractive index glasses are preferred in integrated photonics applications to realize higher integration scale of passive devices. With a refractive index that can be tuned between SiO2 (1.45 and a-SiC (3.2, silicon oxycarbide SiOC offers this flexibility. In the present work, silicon oxycarbide thin films from 0.1 – 2.0 μm thickness are synthesized by reactive radio frequency magnetron sputtering a silicon carbide SiC target in a controlled argon and oxygen environment. The refractive index n and material extinction coefficient k of the silicon oxycarbide films are acquired with variable angle spectroscopic ellipsometry over the UV-Vis-NIR wavelength range. Keeping argon and oxygen gases in the constant ratio, the refractive index n is found in the range from 1.41 to 1.93 at 600 nm which is almost linearly dependent on RF power of sputtering. The material extinction coefficient k has been estimated to be less than 10-4 for the deposited silicon oxycarbide films in the visible and near-infrared wavelength regions. Morphological and structural characterizations with SEM and XRD confirms the amorphous phase of the SiOC films.

Obtaining of polycrystalline silicon for semiconductor industry

International Nuclear Information System (INIS)

Mukashev, F.; Nauryzbaev, M.; Kolesnikov, B.; Ivanov, Y.

1996-01-01

The purpose of the project is to create pilot equipment and optimize the process of obtaining polycrystalline silicon on semi-industrial level. In the past several decades, the historical experience in the developing countries has shown that one of the most promising ways to improve the economy,of a country is to establish semiconductor industry. First of all, the results can help increase defense, national security and create industrial production. The silane method, which has been traditionally' used for obtaining technical and polycrystalline silicon, is to obtain and then to pyrolyzed mono-and poly silanes. Although the traditional methods of obtaining silicon hydrides have specific advantages, such as utilizing by-products, they also have clear shortcomings, i.e. either low output of the ultimate product ( through hydrolysis of Mg 2 Si) or high contents of by-products in it or high contents of dissolving vapors (through decomposing Mg 2 Si in non-water solutions)

ATLAS SCT - Progress on the Silicon Modules

CERN Multimedia

Tyndel, M.

The ATLAS SCT consists of 4088 silicon modules. Each module is made up of 4 silicon sensors with 1536 readout strips. Individual strips are connected to FE amplifiers, discriminators and pipelines on the module, i.e. there are 12 radiation hard ASICs, each containing 128 channels on the module. The sensors and the ASICs were developed for the ATLAS experiment and production is proceeding smoothly with over half the components delivered. The components of a module - 4 silicon sensors, a Cu/polyimide hybrid and pitch adaptor, and 12 ASICs - need to be carefully and precisely assembled onto a carbon and ceramic framework, which supports the module and removes the heat. Eleven production clusters are preparing to carry this out over the next two years. An important milestone for the barrel modules has been passed with the first cluster (KEK) now in production (~40 modules produced). A second cluster UK-B has qualified by producing five modules within specification (see below) and is about to start production. T...

Hybrid Integrated Platforms for Silicon Photonics

Science.gov (United States)

Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

2010-01-01

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Silicon solar cell - from R and D to production

International Nuclear Information System (INIS)

Akhter, P.

1995-01-01

During last 30 years tremendous research and development efforts have concluded that tech-economically silicon is the most suitable material for the manufacturing of solar cells and a number of achievements have been made in the processing of both the materials nd devices. A number of novel structure have been designed and fabricated. The crystalline silicon technology has now become mature enough and is ready to take off from R/D laboratories to large scale fabrication. At laboratory scale the performance of monocrystalline silicon cells have already reached very close to the theoretical value. However the processing cost and efficiency being complimentary, the commercial cells, as a trade off, have to compromise at rather lower efficiencies. Further efforts of lowering the processing cost of both the material and devices are in progress. At the same time attempts are being made to understand the physics of all those factors that limit the efficiency; develop the technologies to eliminate or optimize such effects to reach limiting efficiency with lowest possible cost. All such factors, along with the development will be discussed. (author)

Defects and defect generation in oxide layer of ion implanted silicon-silicon dioxide structures

CERN Document Server

Baraban, A P

2002-01-01

One studies mechanism of generation of defects in Si-SiO sub 2 structure oxide layer as a result of implantation of argon ions with 130 keV energy and 10 sup 1 sup 3 - 3.2 x 10 sup 1 sup 7 cm sup - sup 2 doses. Si-SiO sub 2 structures are produced by thermal oxidation of silicon under 950 deg C temperature. Investigations were based on electroluminescence technique and on measuring of high-frequency volt-farad characteristics. Increase of implantation dose was determined to result in spreading of luminosity centres and in its maximum shifting closer to boundary with silicon. Ion implantation was shown, as well, to result in increase of density of surface states at Si-SiO sub 2 interface. One proposed model of defect generation resulting from Ar ion implantation into Si-SiO sub 2

Dietary Silicon Intake of Korean Young Adult Males and Its Relation to their Bone Status.

Science.gov (United States)

Choi, Mi-Kyeong; Kim, Mi-Hyun

2017-03-01

Accumulated data suggests a positive effect of silicon on bone health; however, limited research exists on the silicon content of foods. To further the understanding of the relationship between dietary silicon intake and bone health, a food composition database of commonly consumed foods in Korea is required. For quantitative data on the intake levels of silicon, we analyzed the silicon content of 365 food items commonly consumed in Korea using inductively coupled plasma-atomic emission spectrometry following microwave-assisted digestion. To investigate the dietary silicon intake status and to examine the potential role of dietary silicon intake in the bone status of men, a total of 400 healthy Korean adult males aged 19-25 were observed for their diet intake and calcaneus bone density using the 24-h recall method and quantitative ultrasound, respectively. Clinical markers reflecting bone metabolism such as serum total alkaline phosphatase, N-mid osteocalcin, and type 1 collagen C-terminal telopeptide concentrations were also analyzed. Silicon intake of the subjects was estimated as 37.5 ± 22.2 mg/day. Major food sources of dietary silicon in the Korean male were cereal and cereal products (25.6 % of total silicon intake), vegetables (22.7 %), beverages and liquors (21.2 %), and milk and milk products (7.0 %). Silicon intake correlated positively with age, weight, energy intake, protein intake, calcium intake, and alcohol intake. After adjusted for age, weight, energy intake, protein intake, calcium intake, alcohol intake, smoking cigarettes, and regular exercise status, daily total silicon intake had no correlation with calcaneus bone density and the bone metabolism markers, but silicon intake from vegetables had a positive correlation with serum total alkaline phosphatase activity, a bone formation maker. These findings show the possible positive relationship between dietary silicon intake from vegetables and the bone formation of young adult males. Further

Measurement of delta-rays in ATLAS silicon sensors

CERN Document Server

The ATLAS collaboration

2013-01-01

In the inner detector of the ATLAS experiment at the LHC, $\\delta$-rays originating from particle interactions in the silicon sensors may cause additional hit channels. A method for identifying silicon hit clusters that are enlarged due to the emission of a $\\delta$-ray is presented. Using pp collision data the expectation is confirmed that the $\\delta$-ray production rate depends linearly on the path length of the particle in silicon, independently of layer radius and detector technology. The range of the $\\delta$-rays, which is a property of the material and should not depend on anything else, is indeed found to be constant as a function of detector layer, path length in silicon and momentum of the particle traversing the silicon. As a by-product of this analysis a method is proposed that could correct for the effect of these $\\delta$-rays, and this could be used to improve track reconstruction.

Trace elements determination in silicon and ferrosilicon reference materials by instrumental neutron activation analysis method

International Nuclear Information System (INIS)

Moreira, Edson Goncalves; Vasconcellos, Marina Beatriz Agostini; Saiki, Mitiko; Iamashita, Celia Omine

2002-01-01

The use of certified reference materials, CRM, is of uppermost importance in the rastreability realization of the measurement process. At times, CRM use is restricted by the non existence of a suitable CRM with similarity to the sample in respect to matrix composition or with element levels in different orders of magnitude. IPT Chemical Division launched a project to prepare a metallic silicon CRM, due to the requirements of the industries in this field. To characterize this new CRM, IPEN Nuclear Reactor Center is able to perform instrumental neutron activation analysis, INAA, a very suitable method for silicon matrix samples because they produce basically the short lived radionuclide 3 1 Si under thermal neutrons flux, which after radioactive decay, does not interfere in the determination of other elements. In this paper, it is presented the determination of As, Br, Co, Cr, K, Eu, Fe, La, Mn, Na Nb, Sb, Sm, Sc, Th, Tb, U, V, W and Yb in silicon CRM NBS SRM 57; ferrosilicon CRM IPT 56; IPT 70; NBS SRM 58a; NBS SRM 59a and silicon RM under preparation IPT 132. From the results, the accuracy and the precision of the process were assessed. (author)

32-element beta detector developed at the Institute of Electron Technology (ITE)

Science.gov (United States)

Wegrzecki, Maciej; Yakushev, Alexander; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kłos, Helena; Panas, Andrzej; Słysz, Wojciech; Stolarski, Maciej; Szmigiel, Dariusz; Wegrzecka, Iwona; Zaborowski, Michał

2014-08-01

The paper presents the design, technology and parameters of a new .silicon detector for detection of electrons (below named as beta detector) developed at the Institute of Electron Technology (ITE). The detector will be used for research on transactinide elements at the GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (GSI). The detector consists of a monolithic 32-element array with an active area diameter of 90 mm and a thickness of 0.9 mm. The starting material is a high-resistivity ν silicon wafer (5 kΩcm resistivity). 32 planar p+-ν junctions are formed by boron diffusion on the top side of the wafer. On the bottom side, an n+ region, which forms a common cathode, is formed on the entire surface by phosphorus diffusion. The array is mounted on a special epoxy-glass laminate substrate, copper-clad on both sides. Two model detectors have been fabricated and studied. Very good electrical parameters have been achieved. For the first array, with supply voltage VR = 20 V, the minimum dark current was 8 nA, the maximum dark current 97.1 nA, and the average dark current 25.1 nA. For the second array, it was 11.5 nA, 378.8 nA and 40.0 nA respectively.

Distribution of impurity elements in slag-silicon equilibria for oxidative refining of metallurgical silicon for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Johnston, M.D.; Barati, M. [Department of Materials Science and Engineering, The University of Toronto, 184 College Street, Toronto, Ont. (Canada)

2010-12-15

The possibility of refining metallurgical grade silicon to a high-purity product for solar cell applications by the slagging of impurity elements was investigated. Distribution coefficients were determined for B, Ca, Mg, Fe, K and P between magnesia or alumina saturated Al{sub 2}O{sub 3}-CaO-MgO-SiO{sub 2} and Al{sub 2}O{sub 3}-BaO-SiO{sub 2} slags and silicon at 1500 C. The partitioning of the impurity elements between molten silicon and slag was examined in terms of basicity and oxygen potential of the slag, with particular focus on the behaviour of boron and phosphorus. The experimental results showed that both of these aspects of slag chemistry have a significant influence on the distribution coefficient of B and P. Increasing the oxygen potential by additions of silica was found to increase the distribution coefficients for both B and P. Increasing the basicity of the slag was not always effective in achieving high removal of these elements from silicon as excess amounts of basic oxides lower the activity of silica and consequently the oxygen potential. The extent of this effect is such that increasing basicity can lead to a decrease in distribution coefficient. Increasing lime in the slag increased distribution coefficients for B and P, but this counterbalancing effect was such that distributions were the lowest in barium-containing slags, despite barium oxide being the most basic of the fluxes used in this study. The highest removal efficiencies achieved were of the order of 80% and 90% for B and P, respectively. It was demonstrated that for the removal of B and P from metallurgical-grade silicon to solar-grade levels, a slag mass about 5 times the mass of silicon would be required. (author)

Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

International Nuclear Information System (INIS)

Neamen, D.; Shedd, W.; Buchanan, B.

1975-01-01

The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 10 7 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si 3 N 4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si 3 N 4 are compared to results on similar devices with SiO 2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

Study of Pellets and Lumps as Raw Materials in Silicon Production from Quartz and Silicon Carbide

Science.gov (United States)

Dal Martello, E.; Tranell, G.; Gaal, S.; Raaness, O. S.; Tang, K.; Arnberg, L.

2011-10-01

The use of high-purity carbon and quartz raw materials reduces the need for comprehensive refining steps after the silicon has been produced carbothermically in the electric reduction furnace. The current work aims at comparing the reaction mechanisms and kinetics occurring in the inner part of the reduction furnace when pellets or lumpy charge is used, as well as the effect of the raw material mix. Laboratory-scale carbothermic reduction experiments have been carried out in an induction furnace. High-purity silicon carbide and two different high-purity hydrothermal quartzes were charged as raw materials at different molar ratios. The charge was in the form of lumps (size, 2-5 mm) or as powder (size, 10-20 μm), mixed and agglomerated as pellets (size, 1-3 mm) and reacted at 2273 K (2000 °C). The thermal properties of the quartzes were measured also by heating a small piece of quartz in CO atmosphere. The investigated quartzes have different reactivity in reducing atmosphere. The carbothermal reduction experiments show differences in the reacted charge between pellets and lumps as charge material. Solid-gas reactions take place from the inside of the pellets porosity, whereas reactions in lumps occur topochemically. Silicon in pellets is produced mainly in the rim zone. Larger volumes of silicon have been found when using lumpy charge. More SiO is produced when using pellets than for lumpy SiO2 for the same molar ratio and heating conditions. The two SiC polytypes used in the carbothermal reduction experiments as carbon reductants presented different reactivity.

Silicon-germanium (Sige) nanostructures production, properties and applications in electronics

CERN Document Server

Usami, N

2011-01-01

Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and mo...

A readout system for position sensitive measurements of X-ray using silicon strip detectors

CERN Document Server

Dabrowski, W; Grybos, P; Idzik, M; Kudlaty, J

2000-01-01

In this paper we describe the development of a readout system for X-ray measurements using silicon strip detectors. The limitation concerning the inherent spatial resolution of silicon strip detectors has been evaluated by Monte Carlo simulation and the results are discussed. The developed readout system is based on the binary readout architecture and consists of two ASICs: RX32 front-end chip comprising 32 channels of preamplifiers, shapers and discriminators, and COUNT32 counter chip comprising 32 20-bit asynchronous counters and the readout logic. This work focuses on the design and performance of the front-end chip. The RX32 chip has been optimised for a low detector capacitance, in the range of 1-3 pF, and high counting rate applications. It can be used with DC coupled detectors allowing the leakage current up to a few nA per strip. For the prototype chip manufactured in a CMOS process all basic parameters have been evaluated by electronic measurements. The noise below 140 el rms has been achieved for a ...

Micro-spectroscopy on silicon wafers and solar cells

Directory of Open Access Journals (Sweden)

Gundel Paul

2011-01-01

Full Text Available Abstract Micro-Raman (μRS and micro-photoluminescence spectroscopy (μPLS are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by μPLS and μRS. μPLS utilizes the carrier diffusion from a point excitation source and μRS the hole density-dependent Fano resonances of the first order Raman peak. This is demonstrated on micro defects in multicrystalline silicon. In comparison with the stress measurement by μRS, these measurements reveal the influence of stress on the recombination activity of metal precipitates. This can be attributed to the strong stress dependence of the carrier mobility (piezoresistance of silicon. With the aim of evaluating technological process steps, Fano resonances in μRS measurements are analyzed for the determination of the doping density and the carrier lifetime in selective emitters, laser fired doping structures, and back surface fields, while μPLS can show the micron-sized damage induced by the respective processes.

Safety procedures used during the manufacturing of amorphous silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Dickson, C R

1987-01-01

The Solarex Thin Film Division is a leader in the manufacturing of amorphous-silicon products for sale in domestic and foreign markets. Similarly, Solarex assumes a leadership role in recognizing the importance of safety in a manufacturing environment. Although many of the safety issues are similar to those in the semiconductor industry, this paper presents topics specific to amorphous silicon technology and the manufacturing ,f amorphous-silicon products. These topics are deposition of conducting transparent oxides (CTOs), amorphous silicon deposition, laser scribing, processing chemicals, fire prevention and administrative responsibilities.

Hybrid Integrated Platforms for Silicon Photonics

Directory of Open Access Journals (Sweden)

John E. Bowers

2010-03-01

Full Text Available A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

Silicon carbide recovered from photovoltaic industry waste as photocatalysts for hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yu [College of Chemical Engineering, Sichuan University, Chengdu, 610064 (China); Hu, Yu [College of Material Science and Enginneering, Sichuan University, Chengdu, 610064 (China); Zeng, Hongmei [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Zhong, Lin, E-mail: zhonglin@scu.edu.cn [College of Chemical Engineering, Sichuan University, Chengdu, 610064 (China); Liu, Kewei; Cao, Hongmei [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Li, Wei [College of Material Science and Enginneering, Sichuan University, Chengdu, 610064 (China); Yan, Hongjian, E-mail: hjyan@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China)

2017-05-05

Highlights: • SiC was recovered from photovoltaic industry waste. • The recovered SiC is mainly consist of 3C-SiC, 6H-SiC and some silicon oxycarbides. • The recovered SiC shows photocatalytic H{sub 2} evolution from water. - Abstract: In recent years, the focus on creating a dependable and efficient means to recycle or recover the valuable parts from the waste material has drawn significantly attention as an environmentally friendly way to deal with the industrial wastes. The silicon carbide (SiC) crystalline is one of reusable material in the slurry wastes generated during wafer slicing. Here we report the use of recovered SiC from the slurry wastes as photocatalysts to produce hydrogen in the presence of Na{sub 2}SO{sub 3}-Na{sub 2}S as electron donor. The recovered SiC were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy spectra (XPS), UV–vis (UV–vis) spectroscopy, and photoluminescence (PL) spectroscopy. The morphology of SiC loaded with 1 wt% Pt as cocatalyst by thermal-reduction method was observed by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (TEM). The experimental results reveal that the recovered SiC is mainly consist of 3C-SiC, 6H-SiC and some silicon oxycarbides on the surface of the SiC. The highest hydrogen production rate is 191.8 μmol h{sup −1} g{sup −1}. This study provides a way to recycle crystalline SiC from the discharged waste in the photovoltaic industry and reuse it as photocatalyst to yield hydrogen with the advantage of low energy consumption, low pollution and easy operation.

Using silicone technology to maintain healthy skin in stoma care.

Science.gov (United States)

White, Maddie

The use of silicone in stoma care has grown in recent years and may be considered the next step in the revolutionary development of stoma-care products. Clinical nurse specialists aim to provide evidence-based care at all times, and the same is true for stoma-care nurses. Preventing harm by choosing products that have a sound research base provides the patients with up-to-date, quality care, which enables them to adapt to life with a stoma and return to 'normal' functioning. This article explores the issue of peristomal skin problems and the development of silicone products, and highlights scenarios where it could be an advantage to choose a silicone product.

High-Temperature Performance of Stacked Silicon Nanowires for Thermoelectric Power Generation

Science.gov (United States)

Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2013-07-01

Deep reactive-ion etching at cryogenic temperatures (cryo-DRIE) has been used to produce arrays of silicon nanowires (NWs) for thermoelectric (TE) power generation devices. Using cryo-DRIE, we were able to fabricate NWs of large aspect ratios (up to 32) using a photoresist mask. Roughening of the NW sidewalls occurred, which has been recognized as beneficial for low thermal conductivity. Generated NWs, which were 7 μm in length and 220 nm to 270 nm in diameter, were robust enough to be stacked with a bulk silicon chip as a common top contact to the NWs. Mechanical support of the NW array, which can be created by filling the free space between the NWs using silicon oxide or polyimide, was not required. The Seebeck voltage, measured across multiple stacks of up to 16 bulk silicon dies, revealed negligible thermal interface resistance. With stacked silicon NWs, we observed Seebeck voltages that were an order of magnitude higher than those observed for bulk silicon. Degradation of the TE performance of silicon NWs was not observed for temperatures up to 470°C and temperature gradients up to 170 K.

Amphiphilic silicone architectures via anaerobic thiol-ene chemistry.

Science.gov (United States)

Keddie, Daniel J; Grande, John B; Gonzaga, Ferdinand; Brook, Michael A; Dargaville, Tim R

2011-11-18

Despite broad application, few silicone-based surfactants of known structure or, therefore, surfactancy have been prepared because of an absence of selective routes and instability of silicones to acid and base. Herein the synthesis of a library of explicit silicone-poly(ethylene glycol) (PEG) materials is reported. Pure silicone fragments were generated by the B(C(6)F(5))(3)-catalyzed condensation of alkoxysilanes and vinyl-functionalized hydrosilanes. The resulting pure products were coupled to thiol-terminated PEG materials using photogenerated radicals under anaerobic conditions.

Acetone production using silicon nanoparticles and catalyst compositions

KAUST Repository

Chaieb, Saharoui; Demellawi, Jehad El; Al-Talla, Zeyad

2015-01-01

Embodiments of the present disclosure provide for a catalytic reaction to produce acetone, a catalyst that include a mixture of silicon particles (e.g., about 1 to 20 nm in diameter) and a solvent, and the like.

Acetone production using silicon nanoparticles and catalyst compositions

KAUST Repository

Chaieb, Sahraoui

2015-12-10

Embodiments of the present disclosure provide for a catalytic reaction to produce acetone, a catalyst that include a mixture of silicon particles (e.g., about 1 to 20 nm in diameter) and a solvent, and the like.

Platelets in blood stored in untreated and siliconed glass bottles and plastic bags

Science.gov (United States)

Kissmeyer-Nielsen, F.; Madsen, C. B.; Nedergaard, Jytte

1961-01-01

Platelet survival was determined using untreated and siliconed glass bottles and plastic bags (Fenwal) for collecting and storing blood. The platelets were tagged in vivo with P32 in six polycythaemic patients undergoing treatment with P32. The results showed that fresh ACD blood collected in untreated glass, siliconed glass, and plastic gave the same recovery of platelets in the recipients. The use of EDTA (Fenwal formula) as anticoagulant gave results inferior to those obtained with blood using ACD as anticoagulant. Even after storage up to 24 hours in untreated glass bottles (ordinary bank blood) a satisfactory recovery of platelets was observed. After storage for 72 hours the recovery was less but not negligible. PMID:14456481

Reactive Melt Infiltration Of Silicon Into Porous Carbon

Science.gov (United States)

Behrendt, Donald R.; Singh, Mrityunjay

1994-01-01

Report describes study of synthesis of silicon carbide and related ceramics by reactive melt infiltration of silicon and silicon/molybdenum alloys into porous carbon preforms. Reactive melt infiltration has potential for making components in nearly net shape, performed in less time and at lower temperature. Object of study to determine effect of initial pore volume fraction, pore size, and infiltration material on quality of resultant product.

Thin film silicon modules: contributions to low cost industrial production

Energy Technology Data Exchange (ETDEWEB)

Shah, A. [Universite de Neuchatel, Neuchatel (Switzerland)

2005-07-01

This final report for the Swiss Federal Office of Energy (SFOE) discusses the research work done during the two-year period 2003-04 at the Thin-Film Solar Cell Laboratory of the Institute of Microtechnology (IMT) at the University of Neuchatel in Switzerland. The transition from fundamental research work to concrete industrialisation issues, and changes within the research staff are discussed. The main results of the work done are presented, including basic techniques for the production of p-i-n solar cells on glass, new technologies for the deposition of n-i-p cells on low-cost flexible substrates and the optimisation of zinc oxide deposition methods. The key role played by substrate chemistry and roughness in the nucleation and growth of micro-crystalline silicon layers is looked at and diagnostic tools for the analysis of micro-crystalline solar cells are discussed.

Silicon Utilizing Microbial Bioactivities in the Biosphere

Science.gov (United States)

Sen, M. M.; Das, S.

2012-12-01

potential as a source of biomass for the production of biofuels, due to their high growth rates and high cellular lipid content. Petroleum pollutant degradation can also be done by these organisms-Achanthes minutissima has degradable effects involving petroleum hydocarbons. Stephanopyxis turris a silicon utilizing organism releases a blend of chlorinated C8 hydrocarbons. This adds a fundamentally new pathway to the limited set of halogenating enzymatic activities known from nature. Many silicon utilizing organisms can produce PUFA from saturated fatty acids which ultimately produce many important bioactive chemicals like hormosirene, finaverrene, heptadienal, dietyopterene, cystophorene, decadienal. Trienoic acid, octadiene and many other important agents. Similarly terpenoid biosynthetic pathway is activated by them with formation of diterpenoids, sesterpenoids, triterpenoids and sterols.

Size limit on the phosphorous doped silicon nanocrystals for dopant activation

Energy Technology Data Exchange (ETDEWEB)

Yang, P., E-mail: pengyuan.yang@surrey.ac.uk [Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 5XH (United Kingdom); Gwilliam, R.M. [Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 5XH (United Kingdom); Crowe, I.F.; Papachristodoulou, N.; Halsall, M.P. [Photon Science Institute, School of Electrical and Electronic Engineering, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Hylton, N.P. [Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ (United Kingdom); Hulko, O.; Knights, A.P. [Department of Engineering Physics and the Centre for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton L8S 4L7, Ontario (Canada); Shah, M.; Kenyon, A.J. [Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE (United Kingdom)

2013-07-15

We studied the photoluminescence spectra of silicon nanocrystals doped with and without phosphorus as a function of isothermal annealing time. Silicon nanocrystals were prepared by the implantation of 80 keV Si{sup +} into a 500 nm SiO{sub 2} film to an areal density of 8 × 10{sup 16} at/cm{sup 2}. Half of the samples were co-implanted with P{sup +} at 80 keV to 5 × 10{sup 15} at/cm{sup 2}. The photoluminescence of the annealed samples were photo-excited at wavelength of 405 nm. For short anneal times, when the nanocrystal size distribution has a relatively small mean diameter, formation in the presence of phosphorus yields an increase in the luminescence intensity and a blue shift in the emission peak compared with intrinsic nanocrystals. As the mean size increases with annealing time, this enhancement rapidly diminishes and the peak energy shifts to the red. Our results indicate the donor electron generation depends strongly on the nanocrystal size. We also found a critical limit above which it allows dopant activation.

Extractive biotransformation for production of metabolites of poorly soluble compounds: synthesis of 32-hydroxy-rifalazil.

Science.gov (United States)

Mozhaev, Vadim V; Mozhaeva, Lyudmila V; Michels, Peter C; Khmelnitsky, Yuri L

2008-10-01

A novel reaction system was developed for the production of metabolites of poorly water-soluble parent compounds using mammalian liver microsomes. The system includes the selection and use of an appropriate hydrophobic polymeric resin as a reservoir for the hydrophobic parent compounds and its metabolites. The utility of the extractive biotransformation approach was shown for the production of a low-yielding, synthetically challenging 32-hydroxylated metabolite of the antibiotic rifalazil using mouse liver microsomes. To address the low solubility and reactivity of rifalazil in the predominantly aqueous microsomal catalytic system, a variety of strategies were tested for the enhanced delivery of hydrophobic substrates, including the addition of mild detergents, polyvinylpyrrolidone, glycerol, bovine serum albumin, and hydrophobic polymeric resins. The latter strategy was identified as the most suitable for the production of 32-hydroxy-rifalazil, resulting in up to 13-fold enhancement of the volumetric productivity compared with the standard aqueous system operating at the solubility limit of rifalazil. The production process was optimized for a wide range of reaction parameters; the most important for improving volumetric productivity included the type and amount of the polymeric resin, cofactor recycling system, concentrations of the biocatalyst and rifalazil, reaction temperature, and agitation rate. The optimized extractive biotransformation system was used to synthesize 32-hydroxy-rifalazil on a multimilligram scale.

Process Development in the Preparation and Characterization of Silicon Alkoxide From Rice Husk

International Nuclear Information System (INIS)

Khin San Win; Toe Shein; Nyunt Wynn

2011-12-01

The preparation and characterization of silicon alkoxide (silicon isopropoxide) from rice husk char has been studied. In the investigation, four kinds of Myanmar paddies were chemically assayed. Analyses showed the silicon contend varies from 73-92% . Based on the silicon content, the process development in the production of silicon isopropoxide was carried out. In the process development, silicon isopropoxide with a yield of 44.21% was achieved by the direct reaction of isopropanol in situ by silicon tetrachloride, which was directly produced by the chlorination of rice husk char at the high temperature range of 900-1100 C. The novelity of the process was that, silicon isopropoxide was achieved in situ and not by using the old process, where generally isopropanol was reacted with silicon tetrachloride. The physiochemical properties of silicon isopropoxide was confirmed by conventional and modern techniques. In the investigation, the starting materials, silica in the reaction products were characterized, identified and confirmed by modren techniques. Silicon isopropoxide can be a sources of pore silica whereby silicon of 97-99% of purity can be achieved.

In vivo characterization of the electrophysiological and astrocytic responses to a silicon neuroprobe implanted in the mouse neocortex.

Science.gov (United States)

Mols, Katrien; Musa, Silke; Nuttin, Bart; Lagae, Liesbet; Bonin, Vincent

2017-11-15

Silicon neuroprobes hold great potential for studies of large-scale neural activity and brain computer interfaces, but data on brain response in chronic implants is limited. Here we explored with in vivo cellular imaging the response to multisite silicon probes for neural recordings. We tested a chronic implant for mice consisting of a CMOS-compatible silicon probe rigidly implanted in the cortex under a cranial imaging window. Multiunit recordings of cortical neurons with the implant showed no degradation of electrophysiological signals weeks after implantation (mean spike and noise amplitudes of 186 ± 42 µV pp and 16 ± 3.2 µV rms , respectively, n = 5 mice). Two-photon imaging through the cranial window allowed longitudinal monitoring of fluorescently-labeled astrocytes from the second week post implantation for 8 weeks (n = 3 mice). The imaging showed a local increase in astrocyte-related fluorescence that remained stable from the second to the tenth week post implantation. These results demonstrate that, in a standard electrophysiology protocol in mice, rigidly implanted silicon probes can provide good short to medium term chronic recording performance with a limited astrocyte inflammatory response. The precise factors influencing the response to silicon probe implants remain to be elucidated.

Complications of transvaginal silicone-coated polyester synthetic mesh sling.

Science.gov (United States)

Govier, F E; Kobashi, K C; Kuznetsov, D D; Comiter, C; Jones, P; Dakil, S E; James, R

2005-10-01

To report a premarket multicenter trial to test the feasibility of a transvaginal silicone-coated polyester synthetic mesh sling in women with anatomic incontinence. Fifty-one patients in four centers underwent transvaginal placement of a silicone-coated polyester synthetic mesh sling (American Medical Systems) during an 8-month period. Of the 51 patients, 31 were part of a prospective institutional review board-approved feasibility trial in three centers funded by American Medical Systems (group 1) and 20 underwent implantation by a single surgeon and their data were retrospectively reviewed (group 2). The studies were done concomitantly, and all slings were fixed transvaginally with bone anchors. All patients in group 1 were followed up at 4 weeks, 6 months, and 1 year (as applicable) with repeat questionnaires, physical examinations, and pad tests. In group 1, 20 patients completed 6 months of follow-up. Ten patients (32%) required a second surgical procedure at an average of 183 days (range 68 to 343) postoperatively. Eight patients (26%) had vaginal extrusion of the mesh, one (3%) required sling lysis, and one (3%) required sling removal because of infection. In group 2, 8 patients (40%) underwent sling removal for vaginal extrusion at a mean of 160 days (range 83 to 214). Transvaginally placed silicone-coated mesh slings used for the treatment of urinary incontinence demonstrated an unacceptably high vaginal extrusion rate in this study. Once identified, this study was immediately terminated, and this product was not marketed for this application in the United States.

Temperature dependent investigation on optically active process of higher-order bands in irradiated silicon

International Nuclear Information System (INIS)

Shi Yi; Nanjing Univ., JS; Wu Fengmei; Nanjing Univ., JS; Zheng Youdou; Nanjing Univ., JS; Suezawa, M.; Imai, M.; Sumino, K.

1996-01-01

Optically active processes of the higher-order bands (HOB) are investigated at different temperatures in fast neutron irradiated silicon using Fourier transform infrared absorption measurement. It is shown that the optically active process is nearly temperature independent below 80 K, the slow decay process remains up to a heating temperature of 180 K. The observations are analyzed in terms of the relaxation behavior of photoexcited carriers governed by fast neutron radiation induced defect clusters. (orig.)

Hydrogen Production Using a Molybdenum Sulfide Catalyst on a Titanium-Protected n+p-Silicon Photocathode

DEFF Research Database (Denmark)

Seger, Brian; Laursen, Anders Bo; Vesborg, Peter Christian Kjærgaard

2012-01-01

A low-cost substitute: A titanium protection layer on silicon made it possible to use silicon under highly oxidizing conditions without oxidation of the silicon. Molybdenum sulfide was electrodeposited on the Ti-protected n+p-silicon electrode. This electrode was applied as a photocathode for wat...

Vacuum die casting of silicon sheet for photovoltaic applications. First quarterly report, March 16-June 30, 1979

Energy Technology Data Exchange (ETDEWEB)

None

1979-01-01

The obtective of this program is to develop a vacuum die-casting process for producing silicon sheet suitable for photovoltaic cells and to develop production techniques for optimization of polycrystallie silicon solar cell output. Efforts will examine process methods which are directed toward minimum cost processing of silicon into a quality suitable for producing solar cells with a terrestrial efficiency greater than 12% and having the potential to be scaled for large quantity production. In the vacuum die casting technique, silicon is melted under vacuum, and an evacuated die with a thin rectangular cavity is inserted into the melt. Liquid silicon is then injected into the die using a positive pressure of an inert gas. The major portion of the die casting work will be performed at Stanford Research Institute International under subcontract. The initial approach will follow parallel tracks: (1) obtain mechanical design parameters by using boron nitride, which has been shown to be non-wetting to silicon; (2) optimize silicon nitride material composition and coatings by sessile drop experiments; (3) test effectiveness of fluoride salt interfacial media with a graphite mold; and (4) test effect of surface finish using both boron nitride and graphite. Having established the material and mechanical boundary conditions, a finalized version of the prototype assembly will be constructed and the casting varibles determined. Polycrystalline silicon solar cells, with and without impurities, will be fabricated, characterized, and optimized at ARCCO Solar. The major activities will focus on the use of Wacker SILCO, HEM and in-house materials until vacuum die cast wafers are available. A baseline process with vacuum metallized contacts will be established and a reference mass production process with screen-printed metallization and high-throughput diffusions will also be obtained.

New cryogenic temperature monitor: PLT-HPT-32

Science.gov (United States)

Viera Curbelo, Teodora Aleida; Martín-Fernández, Sergio Gonzáles; Hoyland, R.; Vega-Moreno, A.; Cozar Castellano, Juan; Gómez Reñasco, M. F.; Aguiar-González, M.; Pérez de Taoro, Angeles; Sánchez-de la Rosa, V.; Rubiño-Martín, J. A.; Génova-Santos, R.

2016-07-01

The PLT-HPT-32, a new cryogenic temperature monitor, has been developed by the Institute of Astrophysics of the Canary Islands (IAC) and an external engineering company (Sergio González Martín-Fernandez). The PLT-HPT-32 temperature monitor offers precision measurement in a wide range of cryogenic and higher-temperature applications with the ability to easily monitor up to 32 sensor channels. It provides better measurement performance in applications where researchers need to ensure accuracy and precision in their low cryogenic temperature monitoring. The PLT-HPT-32 supports PTC RTDs such as platinum sensors, and diodes such as the Lake Shore DT-670 Series. Used with silicon diodes, it provides accurate measurements in cryo-cooler applications from 16 K to above room temperature. The resolution of the measurement is less than 0.1K. Measurements can be displayed in voltage units or Kelvin units. For it, two different tables can be used. One can be programmed by the user, and the other one corresponds to Lake Shore DT670 sensor that comes standard. There are two modes of measuring, the instantaneous mode and averaged mode. In this moment, all channels must work in the same mode but in the near future it expected to be used in blocks of eight channels. The instantaneous mode takes three seconds to read all channels. The averaged mode takes one minute to average twenty samples in all channels. Alarm thresholds can be configured independently for each input. The alarm events, come from the first eight channels, can activate the unit's relay outputs for hard-wired triggering of other systems or audible annunciators. Activate relays on high, low, or both alarms for any input. For local monitoring, "Stand-Alone Mode", the front panel of the PLT-HPT-32 features a bright liquid crystal display with an LED backlight that shows up to 32 readings simultaneously. Plus, monitoring can be done over a network "Remote Control Mode". Using the Ethernet port on the PLT-HPT-32, you

Future application of Czochralski crystal pulling for silicon

Science.gov (United States)

Matlcok, J. H.

1985-08-01

Czochralski (Cz) crystal pulling has been the predominant method used for preparing silicon single crystal for the past twenty years. The fundamental technology used has changed little. However, great strides have been made in learning how to make the crystals bigger and of better quality at ever increasing productivity rates. Currently charge sizes of 50 kg of polycrystal silicon are being used for production and crystals up to ten inches in diameter have been grown without major difficulty. The largest material actually being processed in silicon wafer form is 150 mm (6 inches) in diameter. Growing of crystals in a magnetic field has proved to be particularly useful for microscopic impurity control. Major developments in past years on equipment for Cz crystal pulling have included the automatic growth control of the diameter as well as the starting core of the crystal, the use of magnetic fields and around the crystal puller to supress convection, various recharging schemes for dopant control and the use of continuous liquid feed in the crystal puller. The latter, while far from being a reliable production process, is ideal in concept for major improvement in Cz crystal pulling. The Czochralski process will maintain its dominance of silicon crystal production for many years.

FRONT-END ASIC FOR A SILICON COMPTON TELESCOPE.

Energy Technology Data Exchange (ETDEWEB)

DE GERONIMO,G.; FRIED, J.; FROST, E.; PHLIPS, B.; VERNON, E.; WULF, E.A.

2007-10-27

We describe a front-end application specific integrated circuit (ASIC) developed for a silicon Compton telescope. Composed of 32 channels, it reads out signals in both polarities from each side of a Silicon strip sensor, 2 mm thick 27 cm long, characterized by a strip capacitance of 30 pF. Each front-end channel provides low-noise charge amplification, shaping with a stabilized baseline, discrimination, and peak detection with an analog memory. The channels can process events simultaneously, and the read out is sparsified. The charge amplifier makes uses a dual-cascode configuration and dual-polarity adaptive reset, The low-hysteresis discriminator and the multi-phase peak detector process signals with a dynamic range in excess of four hundred. An equivalent noise charge (ENC) below 200 electrons was measured at 30 pF, with a slope of about 4.5 electrons/pF at a peaking time of 4 {micro}s. With a total dissipated power of 5 mW the channel covers an energy range up to 3.2 MeV.

Effect of silicon and selenium on enzymatic changes and productivity of dill in saline condition

Directory of Open Access Journals (Sweden)

Fariborz Shekari

2017-10-01

Full Text Available Anethum graveolens is an annual herb in the celery family Apiaceae. The experiment was carried out in a factorial design with two factors include salinity, which was applied to the root medium as NaCl (0 and 10 ds/m and nutrition as sodium silicate (0 and 1.5 mM, and selenate (0, 5 μM. Supplementary Si or Se ameliorated the negative effects of salinity on plant dry matter and chlorophyll content. Application of Si or Se decreased Na+ concentration and increased K+ concentration in roots and shoots of dill plants. Salinity imposed oxidative stress and leaded to increase malondialdehyde (MDA concentration. Under saline condition, addition of Si/Se significantly increased the activities of superoxide dismutase (SOD and catalase (CAT in salt-stressed plant when compared with plant subjected to salinity alone. Our results revealed that improvement in growth of salt stressed plants under the influence of Si and Se may be due to the improved ion balance, antioxidant enzymes activities and osmotic adjustment. These trace elements had negative effect on growth under non-saline conditions. Therefore, application of these trace elements (especially Silicon under saline condition could be a better strategy for maintaining the crop productivity in these regions.

Strained silicon as a new electro-optic material

DEFF Research Database (Denmark)

Jacobsen, Rune Shim; Andersen, Karin Nordström; Borel, Peter Ingo

2006-01-01

For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized1, 2. The slow progress within silicon optoelectronics, where electronic and optical...... functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon3. Recently, however, a continuous-wave Raman silicon laser was demonstrated4; if an effective modulator could also be realized in silicon, data...... processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top...

Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

KAUST Repository

Sahli, Florent

2017-10-09

Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

KAUST Repository

Sahli, Florent; Kamino, Brett A.; Werner, Jé ré mie; Brä uninger, Matthias; Paviet-Salomon, Bertrand; Barraud, Loris; Monnard, Raphaë l; Seif, Johannes Peter; Tomasi, Andrea; Jeangros, Quentin; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Despeisse, Matthieu; Nicolay, Sylvain; Niesen, Bjoern; Ballif, Christophe

2017-01-01

Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

International Nuclear Information System (INIS)

Aliane, A.; Agnese, P.; Pigot, C.; Sauvageot, J.-L.; Moro, F. de; Ribot, H.; Gasse, A.; Szeflinski, V.; Gobil, Y.

2008-01-01

Several successful development programs have been conducted on infra-red bolometer arrays at the 'Commissariat a l'Energie Atomique' (CEA-LETI Grenoble) in collaboration with the CEA-SAp (Saclay); taking advantage of this background, we are now developing an X-ray spectro-imaging camera for next generation space astronomy missions, using silicon only technology. We have developed monolithic silicon micro-calorimeters based on implanted thermistors in an improved array that could be used for future space missions. The 8x8 array consists of a grid of 64 suspended pixels fabricated on a silicon on insulator (SOI) wafer. Each pixel of this detector array is made of a tantalum (Ta) absorber, which is bound by means of indium bump hybridization, to a silicon thermistor. The absorber array is bound to the thermistor array in a collective process. The fabrication process of our detector involves a combination of standard technologies and silicon bulk micro-machining techniques, based on deposition, photolithography and plasma etching steps. Finally, we present the results of measurements performed on these four primary building blocks that are required to create a detector array up to 32x32 pixels in size

Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

International Nuclear Information System (INIS)

Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

2007-01-01

The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

Silicon pore optics for the international x-ray observatory

Science.gov (United States)

Wille, E.; Wallace, K.; Bavdaz, M.; Collon, M. J.; Günther, R.; Ackermann, M.; Beijersbergen, M. W.; Riekerink, M. O.; Blom, M.; Lansdorp, B.; de Vreede, L.

2017-11-01

Lightweight X-ray Wolter optics with a high angular resolution will enable the next generation of X-ray telescopes in space. The International X-ray Observatory (IXO) requires a mirror assembly of 3 m2 effective area (at 1.5 keV) and an angular resolution of 5 arcsec. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor industry. We present the manufacturing process ranging from single mirror plates towards complete focusing mirror modules mounted in flight configuration. The performance of the mirror modules is tested using X-ray pencil beams or full X-ray illumination. In 2009, an angular resolution of 9 arcsec was achieved, demonstrating the improvement of the technology compared to 17 arcsec in 2007. Further development activities of Silicon Pore Optics concentrate on ruggedizing the mounting system and performing environmental tests, integrating baffles into the mirror modules and assessing the mass production.

Development of the external cooling device of increase the productivity of neutron-transmutation-doped silicon semiconductor (NTD-Si) (Joint research)

International Nuclear Information System (INIS)

Hirose, Akira; Wada, Shigeru; Sasajima, Fumio; Kusunoki, Tsuyoshi; Kameyama, Iwao; Aizawa, Ryouji; Kikuchi, Naoyuki

2007-01-01

Neutron-Transmutation-Doped Silicon Semiconductor (hereinafter referred as 'NTD-Si') is the best semiconductor for the power device. The needs of NTD-Si increase recently in proportion to the popularization of hybrid-cars. A fission research reactor, which is a steady state neutron source, is being expected as the best device to meet the needs. So far, we have reconsidered the existing approach which is employed for NTD-Si production works at the research reactors JRR-3, JRR-4 and JMTR of JAEA so as to meet the needs. As one of the effective measures, we found out that the productivity can be increased by incorporating a new device to cool down radioactivity of irradiated silicon ingots at the place outside the main stream from the loading of silicon ingots to the withdrawal of irradiated ingots to the existing JRR-3 Uniformity Irradiation System. Consequently, we developed and installed the device (hereinafter referred as 'external cooling device'). After an ingot was irradiated once, it is turned over manually and irradiated again in order to irradiate the ingot uniformly. With the conventional system, it was necessary to wait the radioactivity of ingot decrease less than the permissible level with holding the ingot in the irradiation equipment. It was effective to shorten the waiting period by using an external cooling device for production increase of NTD-Si. It is expected that the productivity of NTD-Si will be increased by using the external cooling device. This report mentions the design of the external cooling device and verification between its design specifications and the performance of the device completed. (author)

A new metal electrocatalysts supported matrix: Palladium nanoparticles supported silicon carbide nanoparticles and its application for alcohol electrooxidation

International Nuclear Information System (INIS)

Dai Hong; Chen Yanling; Lin Yanyu; Xu Guifang; Yang Caiping; Tong Yuejin; Guo Longhua; Chen Guonan

2012-01-01

In this paper, we propose a facile approach for palladium nanoparticles load using silicon carbide nanoparticles as the new supported matrix and a familiar NaBH 4 as reducer. Detailed X-ray photoelectron spectrum (XPS) and transmission electron microscopy (TEM) analysis of the resultant products indicated that palladium nanoparticles are successfully immobilized onto the surface of the silicon carbide nanoparticles with uniform size distribution between 5 and 7 nm. The relative electrochemical characterization clearly demonstrated excellent electrocatalytic activity of this material toward alcohol in alkaline electrolytes. Investigation on the characteristics of the electrocatalytic activity of this material further indicated that the palladium nanoparticles supporting on SiC are very promising for direct alcohol fuel cells (DMFCs), biosensor and electronic devices. Moreover, it was proved that silicon carbide nanoparticles with outstanding properties as support for catalysis are of strong practical interest. And the silicon carbide could perform attractive role in adsorbents, electrodes, biomedical applications, etc.

Silicon production using long flaming coal and improvement of its quality indicators

Directory of Open Access Journals (Sweden)

A. D. Mekhtiev

2014-10-01

Full Text Available The object of this study is to explore possibility of metallothermic producing of crystalline silicon using various types of carbon reducing agents as a reducing agent. The experience of existing enterprises shows that one of the best carbon reducing agents qualifying silicon electric melting technology is charcoal. On the other hand, charcoal has a number of disadvantages, such as its scarcity, high cost and low mechanical strength. Experimental melts has shown the principal possibility of producing the crystalline silicon that meets the requirements of quartz standard using low ash special coke and long-flame coal as reducing agents.

47 CFR 32.6611 - Product management and sales.

Science.gov (United States)

2010-10-01

... activities related to marketing products and services. This includes competitive analysis, product and... analysis, pricing analysis, and identification and establishment of distribution channels. (b) Costs...

Alkaloids from Prosopis juliflora leaves induce glial activation, cytotoxicity and stimulate NO production.

Science.gov (United States)

Silva, A M M; Silva, A R; Pinheiro, A M; Freitas, S R V B; Silva, V D A; Souza, C S; Hughes, J B; El-Bachá, R S; Costa, M F D; Velozo, E S; Tardy, M; Costa, S L

2007-04-01

Prosopis juliflora is used for feeding cattle and humans. Intoxication with the plant has been reported, and is characterized by neuromuscular alterations and gliosis. Total alkaloidal extract (TAE) was obtained using acid/basic-modified extraction and was fractionated. TAE and seven alkaloidal fractions, at concentrations ranging 0.03-30 microg/ml, were tested for 24h on astrocyte primary cultures derived from the cortex of newborn Wistar rats. The MTT test and the measure of LDH activity on the culture medium, revealed that TAE and fractions F29/30, F31/33, F32 and F34/35 were cytotoxic to astrocytes. The EC(50) values for the most toxic compounds, TAE, F31/33 and F32 were 2.87 2.82 and 3.01 microg/ml, respectively. Morphological changes and glial cells activation were investigated through Rosenfeld's staining, by immunocytochemistry for the protein OX-42, specific of activated microglia, by immunocytochemistry and western immunoblot for GFAP, the marker of reactive and mature astrocytes, and by the production of nitric oxide (NO). We observed that astrocytes exposed to 3 microg/ml TAE, F29/30 or F31/33 developed compact cell body with many processes overexpressing GFAP. Treatment with 30 microg/ml TAE and fractions, induced cytotoxicity characterized by a strong cell body contraction, very thin and long processes and condensed chromatin. We also observed that when compared with the control (+/-1.34%), the proportion of OX-42 positive cells was increased in cultures treated with 30 microg/ml TAE or F29/30, F31/33, F32 and F34/35, with values raging from 7.27% to 28.74%. Moreover, incubation with 3 microg/ml F32, 30 microg/ml TAE, F29/30, F31/33 or F34/35 induced accumulation of nitrite in culture medium indicating induction of NO production. Taken together these results show that TAE and fractionated alkaloids from P. juliflora act directly on glial cells, inducing activation and/or cytotoxicity, stimulating NO production, and may have an impact on neuronal

Depth resolved investigations of boron implanted silicon

Science.gov (United States)

Sztucki, M.; Metzger, T. H.; Milita, S.; Berberich, F.; Schell, N.; Rouvière, J. L.; Patel, J.

2003-01-01

We have studied the depth distribution and structure of defects in boron implanted silicon (0 0 1). Silicon wafers were implanted with a boron dose of 6×10 15 ions/cm -2 at 32 keV and went through different annealing treatments. Using diffuse X-ray scattering at grazing incidence and exit angles we are able to distinguish between different kinds of defects (point defect clusters and extrinsic stacking faults on {1 1 1} planes) and to determine their depth distribution as a function of the thermal budget. Cross-section transmission electron microscopy was used to gain complementary information. In addition we have determined the strain distribution caused by the boron implantation as a function of depth from rocking curve measurements.

Silicon application to the soil on soybean yield and seed physiological quality

Directory of Open Access Journals (Sweden)

Sandro de Oliveira

2015-10-01

Full Text Available Use of quality seeds, balanced plant nutrition and the adoption of adequate cultivation techniques are critical to the success of the soybean crop. Use of silicon (Si is a clean technology from an environmental point of view, which can confer several benefits to the plants as stimulate growth and plant production, improve tolerance of plants to attack by insects and diseases, reduce perspiration and increase the photosynthetic rate and protect against abiotic stresses. The goal was to evaluate the effect of soil Si application derived from rice husk ash on the agronomic characteristics, productivity and physiological quality of soybean cultivars seeds. The experiment was conducted in pots of 18 L filled with soil, under a randomized block design with four replications. The soybean cultivars were BMX Turbo RR and NA 5909 RR, grown under five doses of silicon (0, 1, 2, 3, and 4 t ha-1. Agronomic traits and seed yield were evaluated (total number of pods on branches, total number of seeds on the branches, the total number of pods on the main stem, total number of seeds on the main stem, total number of pods per plant, total number of seeds per plant, seed weight per plant and seed weight of 1000. Physiological seed quality was evaluated by germination and vigor tests (first count of germination, cold test, accelerated aging, shoot length and root. The soil application of silicon is beneficial for the soybean crop, improving the main agronomic characteristics (total number of pods on branches, total number of seeds in the branches, total number of pods per plant, weight of seeds per plant and increasing seed yield per plant in soybean cultivar BMX Turbo RR. The mass of a thousand seeds is positively influenced by the dose of 1.67 t ha-1 for the cultivar BMX Turbo RR and up to a dose of 2.32 t ha-1 for the cultivar NA 5909 RR. Cultivar BMX Turbo RR seed vigor is increased with the use of silicon in the soil.

Cloud condensation nucleation activities of calcium carbonate and its atmospheric ageing products.

Science.gov (United States)

Tang, M J; Whitehead, J; Davidson, N M; Pope, F D; Alfarra, M R; McFiggans, G; Kalberer, M

2015-12-28

Aerosol particles can serve as cloud condensation nuclei (CCN) to form cloud droplets, and its composition is a main factor governing whether an aerosol particle is an effective CCN. Pure mineral dust particles are poor CCN; however, changes in chemical composition of mineral dust aerosol particles, due to heterogeneous reactions with reactive trace gases in the troposphere, can modify their CCN properties. In this study we investigated the CCN activities of CaCO3 (as a surrogate for mineral dust) and its six atmospheric ageing products: Ca(NO3)2, CaCl2, CaSO4, Ca(CH3SO3)2, Ca(HCOO)2, and Ca(CH3COO)2. CaCO3 has a very low CCN activity with a hygroscopicity parameter (κ) of 0.001-0.003. The CCN activities of its potential atmospheric ageing products are significantly higher. For example, we determined that Ca(NO3)2, CaCl2 and Ca(HCOO)2 have κ values of ∼0.50, similar to that of (NH4)2SO4. Ca(CH3COO)2 has slightly lower CCN activity with a κ value of ∼0.40, and the κ value of CaSO4 is around 0.02. We further show that exposure of CaCO3 particles to N2O5 at 0% relative humidity (RH) significantly enhances their CCN activity, with κ values increasing to around 0.02-0.04. Within the experimental uncertainties, it appears that the variation in exposure to N2O5 from ∼550 to 15,000 ppbv s does not change the CCN activities of aged CaCO3 particles. This observation indicates that the CaCO3 surface may be already saturated at the shortest exposure. We also discussed the atmospheric implications of our study, and suggested that the rate of change in CCN activities of mineral dust particles in the troposphere is important to determine their roles in cloud formation.

Hybrid III-V/silicon lasers

Science.gov (United States)

Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

2014-05-01

The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

Determinação quantitativa da concentração de silicone em antiespumantes por espectroscopia FT-IR / ATR e calibração multivariada Quantitative determination of silicone in antifoaming products by FT-IR / ATR spectroscopy and multivariate calibration

Directory of Open Access Journals (Sweden)

Marcelo H. F. Garcia

2004-12-01

Full Text Available Neste trabalho apresentamos uma alternativa para a dosagem do teor de silicone (polidimetilsiloxano em antiespumantes por meio da técnica de espectroscopia no infravermelho com transformada de Fourier (FT-IR, com a utilização do acessório de reflectância total atenuada (ATR. Os espectros foram registrados na faixa espectral de 2500 a 780 cm-1, com resolução de 4 cm-1 e 128 varreduras. A calibração de um modelo linear por meio da utilização do método de mínimos quadrados parciais (PLS aplicado aos espectros foi capaz de determinar satisfatoriamente a concentração de silicone nas amostras. Este método é de extrema importância para indústrias produtoras de antiespumantes siliconados, uma vez que o desempenho de tais produtos geralmente é avaliado em função da viscosidade dos mesmos. Muitas vezes no processo de fabricação de tais produtos ocorre uma homogeneização incompleta do silicone no solvente, o que leva a resultados de viscosidade que não são representativos das amostras analisadas. A determinação da concentração do teor de silicone é uma importante ferramenta para o Controle Estatístico de Processo (CEP, pois evita o desperdício de matérias-primas empregadas na fabricação dos antiespumantes.This work presents an alternative method to determine the concentration of silicone (polydimethylsiloxane in antifoaming products using Fourier Transformed Infrared Spectroscopy (FT-IR with the attenuated total reflectance (ATR accessory. The spectra were recorded in the range from 2500 to 780 cm-1, with a resolution of 4 cm-1 and 128 scans. With calibration of a linear model using PLS regression method applied to spectral data we were able to determine the silicone concentration in the samples. This method may be useful for antifoaming producers since the performance of such products generally is evaluated as a function of their viscosity. Moreover, during manufacturing an incomplete homogenization of silicone in the

Subwavelength silicon photonics

International Nuclear Information System (INIS)

Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

2011-01-01

With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

Study on Production of Silicon Nanoparticles from Quartz Sand for Hybrid Solar Cell Applications

Science.gov (United States)

Arunmetha, S.; Vinoth, M.; Srither, S. R.; Karthik, A.; Sridharpanday, M.; Suriyaprabha, R.; Manivasakan, P.; Rajendran, V.

2018-01-01

Nano silicon (nano Si) particles were directly prepared from natural mineral quartz sand and thereafter used to fabricate the hybrid silicon solar cells. Here, in this preparation technique, two process stages were involved. In the first stage, the alkaline extraction and acid precipitation processes were applied on quartz sand to fetch silica nanoparticles. In the second stage, magnesiothermic and modified magnesiothermic reduction reactions were applied on nano silica particles to prepare nano Si particles. The effect of two distinct reduction methodologies on nano Si particle preparation was compared. The magnesiothermic and modified magnesiothermic reductions in the silica to silicon conversion process were studied with the help of x-ray diffraction (XRD) with intent to study the phase changes during the reduction reaction as well as its crystalline nature in the pure silicon phase. The particles consist of a combination of fine particles with spherical morphology. In addition to this, the optical study indicated an increase in visible light absorption and also increases the performance of the solar cell. The obtained nano Si particles were used as an active layer to fabricate the hybrid solar cells (HSCs). The obtained results confirmed that the power conversion efficiency (PCE) of the magnesiothermically modified nano Si cells (1.06%) is much higher as compared to the nano Si cells that underwent magnesiothermic reduction (1.02%). Thus, this confirms the increased PCE of the investigated nano Si solar cell up to 1.06%. It also revealed that nano Si behaved as an electron acceptor and transport material. The present study provided valuable insights and direction for the preparation of nano Si particles from quartz sand, including the influence of process methods. The prepared nano Si particles can be utilized for HSCs and an array of portable electronic devices.

Neutron Transmutation Doping of Silicon at Research Reactors

International Nuclear Information System (INIS)

2012-05-01

This publication details the processes and history of neutron transmutation doping of silicon, particularly its commercial pathway, followed by the requirements for a technologically modern and economically viable production scheme and the current trends in the global market for semiconductor products. It should serve as guidelines on the technical requirements, involved processes and required quality standards for the transmission of sound practices and advice for research reactor managers and operators planning commercial scale production of silicon. Furthermore, a detailed and specific database of most of the world's research reactor facilities in this domain is included, featuring their characteristics for irradiation capabilities, associated production capacities and processing.

Insights into the degradation of (CF3)2CHOCH3 and its oxidative product (CF3)2CHOCHO & the formation and catalytic degradation of organic nitrates

Science.gov (United States)

Bai, Feng-Yang; Jia, Zi-Man; Pan, Xiu-Mei

2018-06-01

In this work, a systematic investigation of the atmospheric oxidation mechanism of (CF3)2CXOCH3 and their oxidative products (CF3)2CXOCHO (X = H, F) initiated by OH radical or Cl atom is performed by density functional theory. This study reveals that the introduction of NO and O2 promotes the formation of organic nitrates, which are hygroscopic and are inclined to form secondary organic aerosols (SOA) and can affect the air quality. The rate constants of the individual reactions are found to be in agreement with the experimental results. One of the intriguing findings of this work is that the peroxynitrite of (CF3)2CHOCH2OONO formed from the subsequent reactions of (CF3)2CHOCH3 is more favorable to isomerize to organic nitrate (CF3)2CHOCH2ONO2 than to dissociate into alkoxy radical (CF3)2CHOCH2O and NO2 because of the lower energy barrier of isomerization. The second significant observation is that the organic nitrate can be degraded more favorably with the presence of NH3, CH3NH2, and CH3NHCH3 than its naked decomposition reaction (CF3)2CHOCH2ONO2→(CF3)2CHOCHO + HONO. The ammonium salt, a vital part of haze, is harmful to human health and can be formed in the existence of the NH3, CH3NH2, and CH3NHCH3. In addition, the toxic substance of peroxyalkyl nitrate (CF3)2CHOC(O)ONO2 which can reduce the visibility of the atmosphere is produced as the primary subsequent oxidation product of (CF3)2CHOCHO in a NO-rich environment. The main species detected experimentally are confirmed by this study. The computational results are crucial to risk assessment and pollution prevention of the volatile organic compounds (VOCs).

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

A novel cold-active β-D-galactosidase from the Paracoccus sp. 32d - gene cloning, purification and characterization

Directory of Open Access Journals (Sweden)

Wierzbicka-Woś Anna

2011-12-01

Full Text Available Abstract Background β-D-Galactosidases (EC 3.2.1.23 catalyze the hydrolysis of terminal non-reducing β-D-galactose residues in β-D-galactosides. Cold-active β-D-galactosidases have recently become a focus of attention of researchers and dairy product manufactures owing to theirs ability to: (i eliminate of lactose from refrigerated milk for people afflicted with lactose intolerance, (ii convert lactose to glucose and galactose which increase the sweetness of milk and decreases its hydroscopicity, and (iii eliminate lactose from dairy industry pollutants associated with environmental problems. Moreover, in contrast to commercially available mesophilic β-D-galactosidase from Kluyveromyces lactis the cold-active counterparts could make it possible both to reduce the risk of mesophiles contamination and save energy during the industrial process connected with lactose hydrolysis. Results A genomic DNA library was constructed from soil bacterium Paracoccus sp. 32d. Through screening of the genomic DNA library on LB agar plates supplemented with X-Gal, a novel gene encoding a cold-active β-D-galactosidase was isolated. The in silico analysis of the enzyme amino acid sequence revealed that the β-D-galactosidase Paracoccus sp. 32d is a novel member of Glycoside Hydrolase Family 2. However, owing to the lack of a BGal_small_N domain, the domain characteristic for the LacZ enzymes of the GH2 family, it was decided to call the enzyme under study 'BgaL'. The bgaL gene was cloned and expressed in Escherichia coli using the pBAD Expression System. The purified recombinant BgaL consists of two identical subunits with a combined molecular weight of about 160 kDa. The BgaL was optimally active at 40°C and pH 7.5. Moreover, BgaL was able to hydrolyze both lactose and o-nitrophenyl-β-D-galactopyranoside at 10°C with Km values of 2.94 and 1.17 mM and kcat values 43.23 and 71.81 s-1, respectively. One U of the recombinant BgaL would thus be capable

CCR5 delta32, matrix metalloproteinase-9 and disease activity in multiple sclerosis

DEFF Research Database (Denmark)

Sellebjerg, Finn; Madsen, Hans O; Jensen, Claus V

2000-01-01

Chemokines and matrix metalloproteinases (MMPs) appear to be crucial in leukocyte recruitment to the central nervous system in multiple sclerosis (MS). CCR5 delta32, a truncated allele of the CC chemokine receptor CCR5 gene encoding a non-functional receptor, did not confer protection from MS. CCR5...... delta32 was, however, associated with a lower risk of recurrent clinical disease activity. High CSF levels of MMP-9 activity were also associated with recurrent disease activity. These results directly link intrathecal inflammation to disease activity in patients with MS, suggesting that treatments...... targeting CCR5 or treatment with MMP inhibitors may attenuate disease activity in MS...

Failure rates for accelerated acceptance testing of silicon transistors

Science.gov (United States)

Toye, C. R.

1968-01-01

Extrapolation tables for the control of silicon transistor product reliability have been compiled. The tables are based on a version of the Arrhenius statistical relation and are intended to be used for low- and medium-power silicon transistors.

Equipment and obtention process of phosphorus-32 starting from sulfur-32; Equipo y proceso de obtencion de fosforo-32 a partir del azufre-32

Energy Technology Data Exchange (ETDEWEB)

Alanis M, J. [ININ, Departamento de Materiales Radiactivos, 52045 Ocoyoacac, Estado de Mexico (Mexico)

2004-12-15

In the National Institute of Nuclear Research, it is the Radioisotopes Production plant, which covers in the area of the medicine 70% approximately of the national market and it exports to some countries of Latin America (Technetium-99, iodine-131, Sm-153 among other). At the moment the plant has modern facilities and certified with the ISO-9001-2000 standard, this, gives trust to the clients as for the quality of its products. Besides the production of radioisotopes dedicated for the medical area, the work of the plant tends to be more enlarged every time, producing new radioisotopes not only but with medical purposes but also industrial and agricultural ones, such it is the case of the production of Phosphorus-32 ({sup 32}P) that has applications with medical, industrial and in the agriculture purposes. The investigation studies from the prime matter (sulfur-32), sulfur purification, sulfur irradiation in the nuclear reactor and the obtaining process of {sup 32}P in a prototype, its took us to design and to build the obtaining process from {sup 32}P to more high level, which is presented in this work. To be able to select the obtaining method of {sup 32} P that is presented it was necessary to study the methods that have been developed in the world, later on it was selected the way that is presented. In that way the physical and chemical properties of the sulfur were studied which is used as prime matter, the interest nuclear reaction was also studied to carry out the production of {sup 32}P by means of the realization of mathematical calculations of irradiation of the sulfur in TRIGA Mark lll nuclear reactor. Once the sulfur is irradiated, it is necessary to carry out the radiochemical separation of the {sup 32}P produced from the sulfur, for this, it was necessary to carry out experimental tests of this separation, later on it was developed a prototype where it was carried out this separation and finally it was developed the final equipment of production of

Achievement report for fiscal 1999 on the development of silicon manufacturing process rationalizing energy utilization. Research and study on analysis to put silicon raw material manufacturing technology for solar cells into practical use; 1999 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

In order to support the development and practical application of a mass production technology for manufacturing silicon raw materials for solar cells, research and study were performed on trends of developing the related technologies, and movements in markets and industries. This paper reports the achievements thereof in fiscal 1999. Markets for solar cells are growing favorably, and the worldwide solar cell production in 1999 was 200 MWp, of which 80% or more is occupied by crystalline silicon solar cell. While development of the manufacturing technology for SOG-Si mass-production is in the stage of operation research of pilot plants, it has been verified that problems of impurity contamination was resolved, and high-purity silicon can be manufactured. In developing the silicon scrap utilization technology and a technology to integrate silicon refinement with casting, a conversion efficiency of 14% or higher was acquired in prototype sample substrates. It has been verified that a variety of raw materials can be dealt with by using the above technology, which has a possibility of cost reduction. In developing a substrate manufacturing technology, a great progress has been made in enhancing the productivity and reducing the cost by developing the continuous casting in the electromagnetic casting and the automation technology. (NEDO)

One-step production of phage-silicon nanoparticles by PLAL as fluorescent nanoprobes for cell identification

Science.gov (United States)

De Plano, Laura M.; Scibilia, Santi; Rizzo, Maria Giovanna; Crea, Sara; Franco, Domenico; Mezzasalma, Angela M.; Guglielmino, Salvatore P. P.

2018-03-01

Silicon nanoparticles (SiNPs) are widely used as promising nanoplatform owing to their high specific surface area, optical properties and biocompatibility. Silicon nanoparticles find possible application in biomedical environment for their potential quantum effects and the functionalization with biomaterials, too. In this work, we propose a new approach for bio-functionalization of SiNPs and M13-engineered bacteriophage, displaying specific peptides that selectively recognize peripheral blood mononuclear cells (PBMC). The "one-step" functionalization is conducted during the laser ablation of silicon plate in buffer solution with engineered bacteriophages, to obtain SiNPs binding bacteriophages (phage-SiNPs). The interaction between SiNPs and bacteriophage is investigated. Particularly, the optical and morphological characterizations of phage-SiNPs are performed by UV-Vis spectroscopy, scanning electron microscopy operating in transmission mode (STEM) and X-ray spectroscopy (EDX). The functionality of phage-SiNPs is investigated through the photoemissive properties in recognition test on PBMC. Our results showed that phage-SiNPs maintain the capability and the activity to bind PBMC within 30 min. The fluorescence of phage-SiNPs allowed to obtain an optical signal on cell type targets. Finally, the proposed strategy demonstrated its potential use in in vitro applications and could be exploited to realize an optical biosensor to detect a specific target.

Silicon-zinc-glycerol hydrogel, a potential immunotropic agent for topical application.

Science.gov (United States)

Khonina, Tat'yana G; Ivanenko, Maria V; Chupakhin, Oleg N; Safronov, Alexander P; Bogdanova, Ekaterina A; Karabanalov, Maxim S; Permikin, Vasily V; Larionov, Leonid P; Drozdova, Lyudmila I

2017-09-30

Nanoparticles synthesized using sol-gel method are promising agents for biomedical applications, in particular for the therapy and diagnosis of various diseases. Using silicon and zinc glycerolates as biocompatible precursors we synthesized by the sol-gel method a new bioactive silicon-zinc-containing glycerohydrogel combining the positive pharmacological properties of the precursors. In the present work the structural features of silicon-zinc-containing glycerohydrogel and its immunotropic properties were studied. The advanced physical methods, including XRD, TEM, dynamic and electrophoretic light scattering, were used for studying the structural features of the gel. Hydrolysis of zinc monoglycerolate was investigated under gelation conditions. Evaluation of the efficiency of silicon-zinc-containing glycerohydrogel in providing immune functions was carried out using a model of the complicated wound process behind immunosuppression induced by hydrocortisone administration in the Wistar rats. It has been shown that zinc monoglycerolate exists in the state of amorphous nanoparticles in the cells of 3D-network formed due to incomplete hydrolysis of silicon glycerolates and subsequent silanol condensation. Zinc monoglycerolate is not hydrolyzed and does not enter 3D-network of the gel with the formation of Zn-O-Si groups, but it forms a separate phase. Immunotropic action of silicon-zinc-containing glycerohydrogel was revealed by the histology and immunohistochemistry methods. Amorphous nanoparticles of zinc monoglycerolate, water-soluble silicon glycerolates, and products of their hydrolytic transformations, which are present in a aqueous-glycerol medium, are in the first place responsible for the pharmacological activity of hydrogel. The results obtained allow us to consider silicon-zinc-containing glycerohydrogel as a promising immunotropic agent for topical application. Copyright © 2017 Elsevier B.V. All rights reserved.

Radiation damage studies for the DOe silicon detector

International Nuclear Information System (INIS)

Lehner, Frank

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Corrosion of porous silicon in tetramethylammonium hydroxide solution

International Nuclear Information System (INIS)

Lai, Chuan; Li, Xue-Ming; Zou, Li-Ke; Chen, Qiang; Xie, Bin; Li, Yu-Lian; Li, Xiao-Lin; Tao, Zhi

2014-01-01

Highlights: • The corrosion of porous silicon in (CH 3 ) 4 NOH solution was studied. • The residue of corrosion products was a mixture of [(CH 3 ) 4 N] 2 SiO 3 and SiO 2 . • The effect factors for porous silicon corrosion were elaborately investigated. • The additive of ethanol in (CH 3 ) 4 NOH solution could reduce the corrosion rate. • The 1.0 M (CH 3 ) 4 NOH could act as an applicable and novel corrosion solution. - Abstract: Corrosion of porous silicon in tetramethylammonium hydroxide (TMAH) solution was studied using weight loss measurements and scanning electron microscope. The effects of temperature, concentration of TMAH and volume ratio of ethanol in 1.0 M TMAH on corrosion rate and corrosion time were elaborately investigated. The residue of corrosion products were characterized as a mixture of [(CH 3 ) 4 N] 2 SiO 3 and SiO 2 . A comparative test among TMAH, KOH and NaOH illustrated that the 1.0 M TMAH could act as an applicable and novel corrosion solution to remove porous silicon layer for determining the porosity of porous silicon

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 October 2003--30 September 2004

Energy Technology Data Exchange (ETDEWEB)

Wohlgemuth, J.; Narayanan, M.

2005-03-01

The major objectives of this program are to continue the advancement of BP Solar polycrystalline silicon manufacturing technology. The program includes work in the following areas: Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations; developing wire saws to slice 100- m-thick silicon wafers on 290- m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100- m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology; facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

Silicon nanoparticles produced by spark discharge

International Nuclear Information System (INIS)

Vons, Vincent A.; Smet, Louis C. P. M. de; Munao, David; Evirgen, Alper; Kelder, Erik M.; Schmidt-Ott, Andreas

2011-01-01

On the example of silicon, the production of nanoparticles using spark discharge is shown to be feasible for semiconductors. The discharge circuit is modelled as a damped oscillator circuit. This analysis reveals that the electrode resistance should be kept low enough to limit energy loss by Joule heating and to enable effective nanoparticle production. The use of doped electrodes results in a thousand-fold increase in the mass production rate as compared to intrinsic silicon. Pure and oxidised uniformly sized silicon nanoparticles with a primary particle diameter of 3–5 nm are produced. It is shown that the colour of the particles can be used as a good indicator of the oxidation state. If oxygen and water are banned from the spark generation system by (a) gas purification, (b) outgassing and (c) by initially using the particles produced as getters, unoxidised Si particles are obtained. They exhibit pyrophoric behaviour. This continuous nanoparticle preparation method can be combined with other processing techniques, including surface functionalization or the immediate impaction of freshly prepared nanoparticles onto a substrate for applications in the field of batteries, hydrogen storage or sensors.

Strained Silicon Photonics

Directory of Open Access Journals (Sweden)

Ralf B. Wehrspohn

2012-05-01

Full Text Available A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

Double stabilization of nanocrystalline silicon: a bonus from solvent

Energy Technology Data Exchange (ETDEWEB)

Kolyagin, Y. G.; Zakharov, V. N.; Yatsenko, A. V.; Paseshnichenko, K. A.; Savilov, S. V.; Aslanov, L. A., E-mail: aslanov.38@mail.ru [Lomonosov Moscow State University (Russian Federation)

2016-01-15

Double stabilization of the silicon nanocrystals was observed for the first time by {sup 29}Si and {sup 13}C MAS NMR spectroscopy. The role of solvent, 1,2-dimethoxyethane (glyme), in formation and stabilization of silicon nanocrystals as well as mechanism of modification of the surface of silicon nanocrystals by nitrogen-heterocyclic carbene (NHC) was studied in this research. It was shown that silicon nanocrystals were stabilized by the products of cleavage of the C–O bonds in ethers and similar compounds. The fact of stabilization of silicon nanoparticles with NHC ligands in glyme was experimentally detected. It was demonstrated that MAS NMR spectroscopy is rather informative for study of the surface of silicon nanoparticles but it needs very pure samples.

Synthetic Promoter Library for Modulation of Actinorhodin Production in Streptomyces coelicolor A3(2)

Science.gov (United States)

Sohoni, Sujata Vijay; Fazio, Alessandro; Workman, Christopher T.; Mijakovic, Ivan; Lantz, Anna Eliasson

2014-01-01

The objective of this study was the application of the synthetic promoter library (SPL) technology for modulation of actinorhodin production in Streptomyces coelicolor A3(2). The SPL technology was used to optimize the expression of a pathway specific positive transcriptional regulator ActII orf4, which activates the transcription of the S. coelicolor actinorhodin biosynthetic gene cluster. The native actII orf4 promoter was replaced with synthetic promoters, generating a S. coelicolor library with a broad range of expression levels of actII orf4. The resulting library was screened based on the yield of actinorhodin. Selected strains were further physiologically characterized. One of the strains from the library, ScoSPL20, showed considerably higher yield of actinorhodin and final actinorhodin titer, compared to S. coelicolor wild type and S. coelicolor with actII orf4 expressed from a strong constitutive promoter. ScoSPL20 demonstrated exceptional productivity despite having a comparatively weak expression from the promoter. Interestingly, the ScoSPL20 promoter was activated at a much earlier stage of growth compared to the wild type, demonstrating the advantage of fine-tuning and temporal tuning of gene expression in metabolic engineering. Transcriptome studies were performed in exponential and actinorhodin-producing phase of growth to compare gene expression between ScoSPL20 and the wild type. To our knowledge, this is the first successful application of the SPL technology for secondary metabolite production in filamentous bacteria. PMID:24963940

Neutron transmutation doping technology of silicon and overview of trial irradiations at Cirus reactor

International Nuclear Information System (INIS)

Singh, Tej; Bhatnagar, Anil; Singh, Kanchhi; Raina, V.K.

2007-12-01

Neutron transmutation doped silicon (NTD-Si) has been used extensively in manufacturing of high power semiconductor devices. The quality of NTD-Si, both from view points of dopant concentration and homogeneity has been found superior to the quality of doped silicon produced by conventional methods. The technology of NTD-Si has been perfected to achieve more accurate resistivity and homogenous resistivity with complete elimination of hot spots. In addition, the greater spatial uniformity, as well as the precise control over the resistivity achievable by using the NTD process, has led to a substantial increase in the breakdown voltage capability of thyristors. The report describes the fundamentals of NTD-Si production and discusses various techniques used for control of dopant concentration and homogeneity. Various aspects like radiation damage, residual radio-activity, nuclear heating, surface contamination and annealing requirements of the silicon ingots after irradiation have also been discussed. Details of trail irradiation and characterization of NTD-Si samples have been provided. Future plans for production of NTD-Si in Cirus and Dhruva reactors have also been discussed. (author)

Nuclear radiation detectors using high resistivity neutron transmutation doped silicon

International Nuclear Information System (INIS)

Gessner, T.; Irmer, K.

1983-01-01

A method for the production of semiconductor detectors based on high resistivity n-type silicon is described. The n-type silicon is produced by neutron irradiation of p-type silicon. The detectors are produced by planar technique. They are suitable for the spectrometry of alpha particles and for the pulse count measurement of beta particles at room temperature. (author)

Laser-beam-induced current mapping evaluation of porous silicon-based passivation in polycrystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Rabha, M. Ben; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia); Dimassi, W.; Bouaicha, M.; Ezzaouia, H. [Laboratoire de photovoltaique, des semiconducteurs et des nanostructures, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia)

2009-05-15

In the present work, we report on the effect of introducing a superficial porous silicon (PS) layer on the performance of polycrystalline silicon (pc-Si) solar cells. Laser-beam-induced current (LBIC) mapping shows that the PS treatment on the emitter of pc-Si solar cells improves their quantum response and reduce the grain boundaries (GBs) activity. After the porous silicon treatment, mapping investigation shows an enhancement of the LBIC and the internal quantum efficiency (IQE), due to an improvement of the minority carrier diffusion length and the passivation of recombination centers at the GBs as compared to the reference substrate. It was quantitatively shown that porous silicon treatment can passivate both the grains and GBs. (author)

Structural symmetry breaking of silicon containing polymers and their relation with electrical conductivity and Raman active vibrations

Science.gov (United States)

Cabrera, Alejandro; González, Carmen; Tagle, Luis; Terraza, Claudio; Volkmann, Ulrich; Barriga, Andrés; Ramos, Esteban; Pavez, Maximiliano

2011-03-01

The incorporation of silicon into the polymeric main chain or side groups can provide an enhancement in chemical, physical and mechanical properties. We report an efficient method for the synthesis of polymers containing silicon in the main chain, from the polycondensation reactions of four optically active carboxylic diacid. The solubility of the polymers, the molecular weight, the glass transition and the thermal stability were studied by standard techniques. Raman spectroscopy was used to probe the conformation of stretching modes as function of the temperature. The conductivity measurements indicated that the alignment of the molecules is a crucial parameter for electrical performance. When the polymers were exposed to iodine, charge transfer increased their mobility and decreased their optical band gaps. These novel properties highlight the possibility to generate alternative active opto-electronics polymers.

Development and Evaluation of a Test System for the Quality Assurance during the Mass Production of Silicon Microstrip Detector Modules for the CMS Experiment

CERN Document Server

Franke, Torsten

2005-01-01

The Compact Muon Solenoid (CMS) is one of four large-scale experiments that is going to be installed at the Large Hadron Collider (LHC) at the European Laboratory for Particle Physics (CERN). For CMS an inner tracking system entirely equipped with silicon microstrip detectors was chosen. With an active area of about 198 m2 it will be the largest tracking device of the world that was ever constructed using silicon sensors. The basic components in the construction of the tracking system are approximately 16,000 so-called modules, which are pre-assembled units consisting of the sensors, the readout electronics and a support structure. The module production is carried out by a cooperation of number of institutes and industrial companies. To ensure the operation of the modules within the harsh radiation environment extensive tests have to be performed on all components. An important contribution to the quality assurance of the modules is made by a test system of which all components were developed in Aachen. In ad...

The kinetics of dewetting ultra-thin Si layers from silicon dioxide

International Nuclear Information System (INIS)

Aouassa, M; Favre, L; Ronda, A; Berbezier, I; Maaref, H

2012-01-01

In this study, we investigate the kinetically driven dewetting of ultra-thin silicon films on silicon oxide substrate under ultra-high vacuum, at temperatures where oxide desorption and silicon lost could be ruled out. We show that in ultra-clean experimental conditions, the three different regimes of dewetting, namely (i) nucleation of holes, (ii) film retraction and (iii) coalescence of holes, can be quantitatively measured as a function of temperature, time and thickness. For a nominal flat clean sample these three regimes co-exist during the film retraction until complete dewetting. To discriminate their roles in the kinetics of dewetting, we have compared the dewetting evolution of flat unpatterned crystalline silicon layers (homogeneous dewetting), patterned crystalline silicon layers (heterogeneous dewetting) and amorphous silicon layers (crystallization-induced dewetting). The first regime (nucleation) is described by a breaking time which follows an exponential evolution with temperature with an activation energy E H ∼ 3.2 eV. The second regime (retraction) is controlled by surface diffusion of matter from the edges of the holes. It involves a very fast redistribution of matter onto the flat Si layer, which prevents the formation of a rim on the edges of the holes during both heterogeneous and homogeneous dewetting. The time evolution of the linear dewetting front measured during heterogeneous dewetting follows a characteristic power law x ∼ t 0.45 consistent with a surface diffusion-limited mechanism. It also evolves as x ∼ h -1 as expected from mass conservation in the absence of thickened rim. When the surface energy is isotropic (during dewetting of amorphous Si) the dynamics of dewetting is considerably modified: firstly, there is no measurable breaking time; secondly, the speed of dewetting is two orders of magnitude larger than for crystalline Si; and thirdly, the activation energy of dewetting is much smaller due to the different driving

Comparative Analysis of the Principal Characteristics of Microsilica Obtained from Silicon Manufacture Wastes and Used in Concrete Production Technologies

Science.gov (United States)

Balabanov, V. B.; Putsenko, K. N.

2017-11-01

On the basis of the survey of foreign and domestic literature over the past 65 years devoted to the study of the properties and the technology of applying microsilica in the capacity of modifying additives to concretes. Microsilica obtained as a by-product from the waste of ferroalloy plants and from the plants involved in production of silicon compounds is discussed. Analysis of the principal characteristics of different types of microsilica obtained from different sources is conducted.

Preparation of biologically active 32P-labeled human relaxin. Displaceable binding to rat uterus, cervix, and brain

International Nuclear Information System (INIS)

Osheroff, P.L.; Ling, V.T.; Vandlen, R.L.; Cronin, M.J.; Lofgren, J.A.

1990-01-01

Relaxin is a member of the insulin family of polypeptide hormones and is known to exert its biological effects on various parts of the mammalian reproductive system. Biologically active human relaxin has been chemically synthesized based on the nucleotide sequence obtained from an ovarian cDNA clone. In the present study synthetic human relaxin was radiolabled by phosphorylation with cAMP-dependent protein kinase and [gamma-32P]ATP to a specific activity of 5000 Ci/mmol. The phosphorylated relaxin was purified on cation exchange high performance liquid chromatography and was shown to co-migrate with relaxin on sodium dodecyl sulfate-polyacrylamide gel electrophoresis. Mass spectrometry revealed a single phosphorylated site on the B chain of relaxin. The 32P-relaxin was able to bind to a goat anti-relaxin antibody, and this binding could be displaced by unlabeled relaxin in a concentration-dependent manner. A comparison of the concentration responses of cellular cAMP production stimulated by relaxin and phosphorylated relaxin in a primary human uterine cell line showed that phosphorylation did not affect the in vitro biological efficacy of relaxin. This made it suitable for in situ autoradiographic localization of relaxin binding sites in rat uterine, cervical, and brain tissue sections. Displacement of the binding of 100 pM 32P-relaxin by 100, 10, and 3 nM unlabeled relaxin, but not by 100 nM insulin, insulin-like growth factor-I, and an insulin-like growth factor-I analog, demonstrated the high affinity and specificity of such binding. We conclude that 32P-labeled human relaxin is biologically and immunologically active and that this novel probe binds reversibly and with high affinity to classical (e.g. uterus) and unpredicted (e.g. brain) tissues

Molecular Surveillance of Viral Processes Using Silicon Nitride Membranes

Directory of Open Access Journals (Sweden)

Deborah F. Kelly

2013-03-01

Full Text Available Here we present new applications for silicon nitride (SiN membranes to evaluate biological processes. We determined that 50-nanometer thin films of SiN produced from silicon wafers were sufficiently durable to bind active rotavirus assemblies. A direct comparison of SiN microchips with conventional carbon support films indicated that SiN performs equivalent to the traditional substrate to prepare samples for Electron Microscopy (EM imaging. Likewise, SiN films coated with Ni-NTA affinity layers concentrated rotavirus particles similarly to affinity-coated carbon films. However, affinity-coated SiN membranes outperformed glow-discharged conventional carbon films 5-fold as indicated by the number of viral particles quantified in EM images. In addition, we were able to recapitulate viral uncoating and transcription mechanisms directed onto the microchip surfaces. EM images of these processes revealed the production of RNA transcripts emerging from active rotavirus complexes. These results were confirmed by the functional incorporation of radiolabeled nucleotides into the nascent RNA transcripts. Collectively, we demonstrate new uses for SiN membranes to perform molecular surveillance on life processes in real-time.

Leaching of silicon from ferronickel (FeNi) smelting slag with sodium hydroxide solution at atmospheric pressure

Science.gov (United States)

Mufakhir, F. R.; Mubarok, M. Z.; Ichlas, Z. T.

2018-01-01

The present paper reports the leaching behavior of silicon from ferronickel slag under atmospheric pressure using sodium hydroxide solution. The effect of several experimental variables, namely concentration of leaching agent, operating temperature, stirring speed, and slurry density was investigated. The leaching kinetic was also investigated by using shrinking core model. It was determined that leaching of silicon from the slag was controlled by diffusion through product layer, although the activation energy was found to be 85.84 kJ/mol, which was unusually high for such a diffusion-controlled process.

P contribution derived from phosphate solubilizing microorganism activity, rock phosphate and SP-36 determination by isotope "3"2P technique

International Nuclear Information System (INIS)

Anggi Nico Flatian; Iswandi Anas; Atang Sutandi; Ishak

2016-01-01

The "3"2P isotope technique has been used to trace P nutrients in the soil and soil-plant systems. The use of the isotope "3"2P has made it possible to differentiate the P contribution derived from phosphate solubilizing microorganism activity and the fertilizer P in the soil. The aims of the study were to obtain the quantitative data of P contribution derived from phosphate-solubilizing microorganism activity (Aspergillus niger and Burkholderia cepacia), rock phosphate and SP-36 through P uptake by the plants using isotope "3"2P technique and also to study the effects on growth and production of corn plants. The results were showed that phosphate-solubilizing microorganism, rock phosphate and SP-36 was produced specific activity ("3"2P) lower than control. The results were indicated that all treatments could contribute P for the plants. The lower specific activity was caused by supply P from rock phosphate and SP-36, and also was caused by solubilized of unavailable "3"1P from PSM activity, which decreased specific activity on labeled soil. The combination of phosphate-solubilizing microorganism and SP-36 treatments produced the highest P contribution, significantly higher than control and SP-36 only. Phosphate derived from combination of microorganism and SP-36 treatments ranging from 56.06% - 68.54% after 50 days planting, after 35 days planting, 51.96% - 59.65% on stover, 46.33% - 47.70% on grain and 53.02% - 59.87% on corn cob. In addition, the treatments could significantly support the plant growth and yield. It is expressed by increased number of leave at 35 days after planting, dry weight of leave at 35 days after planting and dry weight of grain. (author)

Charged pion production in 32 GeV/c K+p interactions

International Nuclear Information System (INIS)

Ajinenko, I.V.; Belokopitov, Y.A.; Chliapnikov, P.V.; Falaleev, V.P.; Fenyuk, A.B.; Gerdyukov, L.N.; Kurnosenko, A.I.; Rybin, A.M.; Wolf, E.A.; Dumont, J.J.

1980-01-01

Final data on topological cross sections are presented. Inclusive single particle distributions for the reactions K + p → π + -X at 32 GeV/c are discussed and compared with data at lower energies. Early scaling in the fragmentation regions is confirmed, while cross sections in the central region continue to rise with energy even faster than in pp interactions. The x- and psub(T)-dependence of the π + /π - ratio K + p interactions is discussed and a comparison of reactions K + p → π + -X and K - p → π + -X at 32 GeV/c is made in the context of constituent models. We also present transverse momentum distributions, show prominent seagull effects and study how they are influenced by resonance production. (orig.) 891 HSI/orig. 892 MKO

X-ray imaging characterization of active edge silicon pixel sensors

International Nuclear Information System (INIS)

Ponchut, C; Ruat, M; Kalliopuska, J

2014-01-01

The aim of this work was the experimental characterization of edge effects in active-edge silicon pixel sensors, in the frame of X-ray pixel detectors developments for synchrotron experiments. We produced a set of active edge pixel sensors with 300 to 500 μm thickness, edge widths ranging from 100 μm to 150 μm, and n or p pixel contact types. The sensors with 256 × 256 pixels and 55 × 55 μm 2 pixel pitch were then bump-bonded to Timepix readout chips for X-ray imaging measurements. The reduced edge widths makes the edge pixels more sensitive to the electrical field distribution at the sensor boundaries. We characterized this effect by mapping the spatial response of the sensor edges with a finely focused X-ray synchrotron beam. One of the samples showed a distortion-free response on all four edges, whereas others showed variable degrees of distortions extending at maximum to 300 micron from the sensor edge. An application of active edge pixel sensors to coherent diffraction imaging with synchrotron beams is described

Aberrant activity of NKL homeobox gene NKX3-2 in a T-ALL subset

Science.gov (United States)

Meyer, Corinna; Kaufmann, Maren; Zaborski, Margarete; MacLeod, Roderick A. F.; Drexler, Hans G.

2018-01-01

T-cell acute lymphoblastic leukemia (T-ALL) is a hematopoietic malignancy originating from T-cell progenitors in which differentiation is blocked at early stages. Physiological expression of specific NKL homeobox genes obeys a hematopoietic NKL-code implicated in the process of lymphopoiesis while in differentiated T-cells these genes are silenced. We propose that this developmental expression pattern underlies the observation that NKL homeobox genes are the most ubiquitous group of transcription factors deregulated in T-ALL, including TLX1, TLX3, NKX2-5 and NKX3-1. Here, we describe a novel member of the NKL homeobox gene subclass, NKX3-2 (BAPX1), which is aberrantly activated in 18% of pediatric T-ALL patients analyzed while being normally expressed in developing spleen. Identification of NKX3-2 expression in T-ALL cell line CCRF-CEM qualified these cells to model its deregulation and function in a leukemic context. Genomic and chromosomal analyses demonstrated normal configuration of the NKX3-2 locus at chromosome 4p15, thus excluding cytogenetic dysregulation. Comparative expression profiling analysis of NKX3-2 patient data revealed deregulated activity of BMP- and MAPK-signalling. These candidate pathways were experimentally confirmed to mediate aberrant NKX3-2 expression. We also show that homeobox gene SIX6, plus MIR17HG and GATA3 are downstream targets of NKX3-2 and plausibly contribute to the pathogenesis of this malignancy by suppressing T-cell differentiation. Finally, NKL homeobox gene NKX2-5 was activated by NKX3-2 in CCRF-CEM and by FOXG1 in PEER, representing mutually inhibitory activators of this translocated oncogene. Together, our findings reveal a novel oncogenic NKL homeobox gene subclass member which is aberrantly expressed in a large subset of T-ALL patients and participates in a deregulated gene network likely to arise in developing spleen. PMID:29746601

Quality evaluation of resistivity-controlled silicon crystals

Science.gov (United States)

Wang, Jong Hoe

2006-01-01

The segregation phenomenon of dopants causes a low production yield of silicon crystal that meets the resistivity tolerance required by device manufacturers. In order to control the macroscopic axial resistivity distribution in bulk crystal growth, numerous studies including continuous Czochralski method and double crucible technique have been studied. The simple B-P codoping method for improving the productivity of p-type silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. In this work, the quality of Czochralski-grown silicon single crystals with a diameter 200 mm using B-P codoping method was studied from the chemical and structural points of view. It was found that the characteristics of B-P codoped wafers including the oxygen precipitation behavior and the grown-in defects are same as that of conventional B-doped Czochralski crystals.

Silicon heterojunction solar cell passivation in combination with nanocrystalline silicon oxide emitters

NARCIS (Netherlands)

Gatz, H.A.; Rath, J.K.; Verheijen, M.A.; Kessels, W.M.M.; Schropp, R.E.I.

2016-01-01

Silicon heterojunction solar cells (SHJ) are well known for their high efficiencies, enabled by their remarkably high open-circuit voltages (VOC). A key factor in achieving these values is a good passivation of the crystalline wafer interface. One of the restrictions during SHJ solar cell production

Mechanochemical approaches to employ silicon as a lithium-ion battery anode

International Nuclear Information System (INIS)

Shimoi, Norihiro; Bahena-Garrido, Sharon; Tanaka, Yasumitsu; Qiwu, Zhang

2015-01-01

Silicon is essential as an active material in lithium-ion batteries because it provides both high-charge and optimal cycle characteristics. The authors attempted to realize a composite by a simple mechanochemical grinding approach of individual silicon (Si) particles and copper monoxide (CuO) particles to serve as an active material in the anode and optimize the charge-discharge characteristics of a lithium-ion battery. The composite with Si and CuO allowed for a homogenous dispersion with nano-scale Si grains, nano-scale copper-silicon alloy grains and silicon monoxide oxidized the oxide from CuO. The authors successfully achieved the synthesis of an active composite unites the structural features of an active material based on silicon composite as an anode in Li-ion battery with high capacity and cyclic reversible charge properties of 3256 mAh g −1 after 200 cycles

Bioprocess intensification of antibiotic production by Streptomyces coelicolor A3(2) in micro-porous culture

Energy Technology Data Exchange (ETDEWEB)

Ndlovu, T.M., E-mail: tm.ndlovu@nutriss.com [NUTRISS Limited, INEX, Herschel Annex, Kings Road, Newcastle upon Tyne NE1 7RU (United Kingdom); Ward, A.C. [School of Biology, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom); Department of Microbiology, Chung-Ang University, College of Medicine, Seoul, Republic of Korea 156-756 (Korea, Republic of); Glassey, J. [School of Chemical Engineering and Advanced Materials, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Eskildsen, J. [NUTRISS Limited, INEX, Herschel Annex, Kings Road, Newcastle upon Tyne NE1 7RU (United Kingdom); Akay, G. [School of Chemical Engineering and Advanced Materials, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom)

2015-04-01

A novel functionalized micro-porous matrix was developed with well-controlled physicochemical proprieties such as pore size and surface chemistry. The matrix was used as a solid support in the growth of “Streptomyces coelicolor” A3(2) to enhance the production of antibiotics. The results shown support a higher production of prodigiosin and actinorhodin with overall production increase of 2–5 and 6–17, respectively, compared to conventional submerged liquid culture, offering a potential improvement in volumetric productivity. Scanning Electron Microscopy was used to evaluate pore size as well as bacterial adhesion, penetration, proliferation and migration within the micro-porous matrix. - Highlights: • Preparation of novel micro-porous matrix with different physiochemical proprieties • S. coelicolor A3(2) was cultured in those micro-porous and antibiotics was enhanced. • Matrix pore sizes and surface chemistry influenced bacterial signalling. • Bacterial signalling has a profound effect in the overproduction of Prodigiosin and actinorhodin. • Prodigiosin and actinorhodin production within micro-porous was 5–17 times higher compared with liquid growth.

Bioprocess intensification of antibiotic production by Streptomyces coelicolor A3(2) in micro-porous culture

International Nuclear Information System (INIS)

Ndlovu, T.M.; Ward, A.C.; Glassey, J.; Eskildsen, J.; Akay, G.

2015-01-01

A novel functionalized micro-porous matrix was developed with well-controlled physicochemical proprieties such as pore size and surface chemistry. The matrix was used as a solid support in the growth of “Streptomyces coelicolor” A3(2) to enhance the production of antibiotics. The results shown support a higher production of prodigiosin and actinorhodin with overall production increase of 2–5 and 6–17, respectively, compared to conventional submerged liquid culture, offering a potential improvement in volumetric productivity. Scanning Electron Microscopy was used to evaluate pore size as well as bacterial adhesion, penetration, proliferation and migration within the micro-porous matrix. - Highlights: • Preparation of novel micro-porous matrix with different physiochemical proprieties • S. coelicolor A3(2) was cultured in those micro-porous and antibiotics was enhanced. • Matrix pore sizes and surface chemistry influenced bacterial signalling. • Bacterial signalling has a profound effect in the overproduction of Prodigiosin and actinorhodin. • Prodigiosin and actinorhodin production within micro-porous was 5–17 times higher compared with liquid growth

Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

Science.gov (United States)

Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

2018-01-01

The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

High yield silicon carbide from alkylated or arylated pre-ceramic polymer

International Nuclear Information System (INIS)

Baney, R.H.; Gaul, J.H.

1982-01-01

Alkylated or arylated methylpolysilanes which exhibit ease of handling and are used to obtain silicon carbide ceramic materials in high yields contain 0 to 60 mole percent (CH 3 ) 2 Si double bond units and 40 to 100 mole percent CH 3 Si triple bond units, wherein there is also bonded to the silicon atoms other silicon atoms and additional alkyl radicals of 1 to 4 carbon atoms or phenyl. They may be prepared by reaction of a Grignard reagent RMgX, where X is halogen and R is Csub(1-4)-alkyl or phenyl, with a starting material which is a solid at 25 0 C, and is identical to the product except that the remaining bonds on the silicon atoms are attached to another silicon atom, or a chlorine or a bromine atom. Ceramics result from heating the polysilane products to 1200 0 C, optionally with fillers. (author)

Effect of copper on the recombination activity of extended defects in silicon

Energy Technology Data Exchange (ETDEWEB)

Feklisova, O. V., E-mail: feklisov@iptm.ru; Yakimov, E. B. [Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)

2015-06-15

The effect of copper atoms introduced by high-temperature diffusion on the recombination properties of dislocations and dislocation trails in p-type single-crystal silicon is studied by the electron-beam-induced current technique. It is shown that, in contrast to dislocations, dislocation trails exhibit an increase in recombination activity after the introduction of copper. Bright contrast appearance in the vicinity of dislocation trails is detected after the diffusion of copper and quenching of the samples. The contrast depends on the defect density in these trails.

Mathematical model of silicon smelting process basing on pelletized charge from technogenic raw materials

Science.gov (United States)

Nemchinova, N. V.; Tyutrin, A. A.; Salov, V. M.

2018-03-01

The silicon production process in the electric arc reduction furnaces (EAF) is studied using pelletized charge as an additive to the standard on the basis of the generated mathematical model. The results obtained due to the model will contribute to the analysis of the charge components behavior during melting with the achievement of optimum final parameters of the silicon production process. The authors proposed using technogenic waste as a raw material for the silicon production in a pelletized form using liquid glass and aluminum production dust from the electrostatic precipitators as a binder. The method of mathematical modeling with the help of the ‘Selector’ software package was used as a basis for the theoretical study. A model was simulated with the imitation of four furnace temperature zones and a crystalline silicon phase (25 °C). The main advantage of the created model is the ability to analyze the behavior of all burden materials (including pelletized charge) in the carbothermic process. The behavior analysis is based on the thermodynamic probability data of the burden materials interactions in the carbothermic process. The model accounts for 17 elements entering the furnace with raw materials, electrodes and air. The silicon melt, obtained by the modeling, contained 91.73 % wt. of the target product. The simulation results showed that in the use of the proposed combined charge, the recovery of silicon reached 69.248 %, which is in good agreement with practical data. The results of the crystalline silicon chemical composition modeling are compared with the real silicon samples of chemical analysis data, which showed the results of convergence. The efficiency of the mathematical modeling methods in the studying of the carbothermal silicon obtaining process with complex interphase transformations and the formation of numerous intermediate compounds using a pelletized charge as an additive to the traditional one is shown.

Hydrogen generation using silicon nanoparticles and their mixtures with alkali metal hydrides

Science.gov (United States)

Patki, Gauri Dilip

Hydrogen is a promising energy carrier, for use in fuel cells, engines, and turbines for transportation or mobile applications. Hydrogen is desirable as an energy carrier, because its oxidation by air releases substantial energy (thermally or electrochemically) and produces only water as a product. In contrast, hydrocarbon energy carriers inevitably produce CO2, contributing to global warming. While CO2 capture may prove feasible in large stationary applications, implementing it in transportation and mobile applications is a daunting challenge. Thus a zero-emission energy carrier like hydrogen is especially needed in these cases. Use of H2 as an energy carrier also brings new challenges such as safe handling of compressed hydrogen and implementation of new transport, storage, and delivery processes and infrastructure. With current storage technologies, hydrogen's energy per volume is very low compared to other automobile fuels. High density storage of compressed hydrogen requires combinations of high pressure and/or low temperature that are not very practical. An alternative for storage is use of solid light weight hydrogenous material systems which have long durability, good adsorption properties and high activity. Substantial research has been conducted on carbon materials like activated carbon, carbon nanofibers, and carbon nanotubes due to their high theoretical hydrogen capacities. However, the theoretical values have not been achieved, and hydrogen uptake capacities in these materials are below 10 wt. %. In this thesis we investigated the use of silicon for hydrogen generation. Hydrogen generation via water oxidation of silicon had been ignored due to slow reaction kinetics. We hypothesized that the hydrogen generation rate could be improved by using high surface area silicon nanoparticles. Our laser-pyrolysis-produced nanoparticles showed surprisingly rapid hydrogen generation and high hydrogen yield, exceeding the theoretical maximum of two moles of H2 per

Characterization of thin-film silicon materials and solar cells through numerical modeling

NARCIS (Netherlands)

Pieters, B.E.

2008-01-01

At present most commercially available solar cells are made of crystalline silicon (c-Si). The disadvantages of crystalline silicon solar cells are the high material cost and energy consumption during production. A cheaper alternative can be found in thin-film silicon solar cells. The thin-film

32 CFR 199.16 - Supplemental Health Care Program for active duty members.

Science.gov (United States)

2010-07-01

... 32 National Defense 2 2010-07-01 2010-07-01 false Supplemental Health Care Program for active duty... (CHAMPUS) § 199.16 Supplemental Health Care Program for active duty members. (a) Purpose and applicability... the supplemental health care program for active duty members of the uniformed services, the provision...

Production of polycrystalline silicon by fluidized-bed-problems and recent progress of study

Energy Technology Data Exchange (ETDEWEB)

Kojima, Toshinori

1988-10-01

Concerning the production of polycrystalline silicon from SiH/sub 4/ by applying fluidized bed reaction, recent progress of study, problems involved, and countermeasures to them were reported. For the experiment, stainless tube with 50mm inside diameter attached with electric heater on the wall as auxillary heat source was used to measure the temperature distribution in the bed. As the diluting gas, hydrogen and argon were used to investigate the effect of diluent gas and it was understood that sort of diluent gas affected on the crogging and reaction rate. It was indicated that, in the fluidized bed reaction which gave large depositing area and high productivity, contamination was easily occurred. Observation of fine powder by electronic-microscope revealed that different diluent caused the difference of fine powder shape and that the higher the reaction temperature the more fine powder was produced. Crogging condition was affected by tower diameter, together with temperature and fluidizing conditions. In addition, two recent patents were introduced. 11 references, 10 figures.

Environmental Life Cycle Inventory of Crystalline Silicon Photovoltaic System Production. Status 2005-2006 (Excel File)

International Nuclear Information System (INIS)

De Wild - Scholten, M.J.; Alsema, E.A.

2007-03-01

The authors have assembled this LCI data set to the best of their knowledge and in their opinion it gives a reliable representation of the crystalline silicon module production technology in Western-Europe in the year 2005/2006 and Balance-of-System components of the year 2006. However, most of the data were provided to them by the companies that helped them. Although they have cross-checked the data from different sources they cannot guarantee that it does not contain any errors. Therefore they cannot accept any responsibility for the use of these data

Flexible integration of free-standing nanowires into silicon photonics.

Science.gov (United States)

Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

2017-06-14

Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

Equipment and obtention process of phosphorus-32 starting from sulfur-32

International Nuclear Information System (INIS)

Alanis M, J.

2004-12-01

In the National Institute of Nuclear Research, it is the Radioisotopes Production plant, which covers in the area of the medicine 70% approximately of the national market and it exports to some countries of Latin America (Technetium-99, iodine-131, Sm-153 among other). At the moment the plant has modern facilities and certified with the ISO-9001-2000 standard, this, gives trust to the clients as for the quality of its products. Besides the production of radioisotopes dedicated for the medical area, the work of the plant tends to be more enlarged every time, producing new radioisotopes not only but with medical purposes but also industrial and agricultural ones, such it is the case of the production of Phosphorus-32 ( 32 P) that has applications with medical, industrial and in the agriculture purposes. The investigation studies from the prime matter (sulfur-32), sulfur purification, sulfur irradiation in the nuclear reactor and the obtaining process of 32 P in a prototype, its took us to design and to build the obtaining process from 32 P to more high level, which is presented in this work. To be able to select the obtaining method of 32 P that is presented it was necessary to study the methods that have been developed in the world, later on it was selected the way that is presented. In that way the physical and chemical properties of the sulfur were studied which is used as prime matter, the interest nuclear reaction was also studied to carry out the production of 32 P by means of the realization of mathematical calculations of irradiation of the sulfur in TRIGA Mark lll nuclear reactor. Once the sulfur is irradiated, it is necessary to carry out the radiochemical separation of the 32 P produced from the sulfur, for this, it was necessary to carry out experimental tests of this separation, later on it was developed a prototype where it was carried out this separation and finally it was developed the final equipment of production of 32 P mainly composed of three

Environmentally Benign Production of Stretchable and Robust Superhydrophobic Silicone Monoliths.

Science.gov (United States)

Davis, Alexander; Surdo, Salvatore; Caputo, Gianvito; Bayer, Ilker S; Athanassiou, Athanassia

2018-01-24

Superhydrophobic materials hold an enormous potential in sectors as important as aerospace, food industries, or biomedicine. Despite this great promise, the lack of environmentally friendly production methods and limited robustness remain the two most pertinent barriers to the scalability, large-area production, and widespread use of superhydrophobic materials. In this work, highly robust superhydrophobic silicone monoliths are produced through a scalable and environmentally friendly emulsion technique. It is first found that stable and surfactantless water-in-polydimethylsiloxane (PDMS) emulsions can be formed through mechanical mixing. Increasing the internal phase fraction of the precursor emulsion is found to increase porosity and microtexture of the final monoliths, rendering them superhydrophobic. Silica nanoparticles can also be dispersed in the aqueous internal phase to create micro/nanotextured monoliths, giving further improvements in superhydrophobicity. Due to the elastomeric nature of PDMS, superhydrophobicity can be maintained even while the material is mechanically strained or compressed. In addition, because of their self-similarity, the monoliths show outstanding robustness to knife-scratch, tape-peel, and finger-wipe tests, as well as rigorous sandpaper abrasion. Superhydrophobicity was also unchanged when exposed to adverse environmental conditions including corrosive solutions, UV light, extreme temperatures, and high-energy droplet impact. Finally, important properties for eventual adoption in real-world applications including self-cleaning, stain-repellence, and blood-repellence are demonstrated.

Radiation damage studies for the D0 silicon detector

International Nuclear Information System (INIS)

Lehner, F.

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Clinical study of secondary glaucoma after silicone oil tamponade

Directory of Open Access Journals (Sweden)

Xiao-Chun Chen

2013-12-01

Full Text Available AIM: To evaluate the related risk factors and treatment method of secondary glaucoma after pars plana vitrectomy and silicone oil tamponade.METHODS: The retrospective study analyzed 114 patients(118 eyeswho were treated with pars plana vitrectomy combined with silicone oil tamponade. Lenses were reserved in 78 eyes and were taken away in 40 eyes among which intraocular lens were implanted in 17 eyes. There were 39 eyes in which the filling time of silicone was no more than 6 months while 79 eyes in which the filling time was more than 6 months. The follow-up time was(16.2±4.9months. Primary and secondary glaucoma were excluded before the vitrectomy. Silicone oil glaucoma(SOGwas diagnosed when intraocular pressure(IOPwas measured higher than 21mmHg(1mmHg=0.133kPathree times in succession at least 1 month after silicone oil tamponade and inflammation and neovascular glaucoma should be excluded. Anti-glaucoma drugs were administrated once SOG was diagnosed. If the IOP was not controlled after 2 weeks, the silicone oil was taken away. If the IOP was still high, the anti-glaucoma surgery was operated. The data was analyzed by the SPSS 16.0 software using a binary logistic regression analysis. RESULTS: Among the 32 eyes of SOG, lenses were removed in 16 eyes(50%. The filling time of silicone oil was more than 6 months in 27 eyes(84.4%and silicone oil emulsion happened in 20 eyes(62.5%. IOP returned normal in 17 eyes after administrating anti-glaucoma medication within 2 weeks. Silicone oils were taken away in 15 eyes. However, 4 eyes still had high IOP after surgery; one of them was given anti-glaucoma drugs once more; two of them underwent trabeculectomy and one of them underwent cyclophotocoagulation. The lens conditions(whether it was taken away or not, P=0.024, the silicone oil filling time(whether the time was more than 6 months, P=0.014, and the status of the silicone oil(whether emulsification occurred or not, P=0.000were all found to be

Impact-ionization autosolitons in compensated silicon

International Nuclear Information System (INIS)

Musaev, A.M.

2004-01-01

The results of the experimental identification and study on the autosolitons with the charge carriers self-production by the impact ionization of the indium deep acceptor levels in silicon in the strong electric fields at the temperature of 77 K are presented. The role of the activator in the considered autosolitons excitation model is played by the free charge carriers concentration and the role of the inhibitor by the carriers temperature. The solitons existence is determined by the fact, that the area of the carriers high concentration in the autosolitons center does not spread, while the diffusion flow from the autosolitons center is counterbalanced by the thermodiffusion flow [ru

Silicon hydride nanocrystals as catalysts for proton production in water-organic liquid mixtures

KAUST Repository

Chaieb, Sahraoui

2014-08-05

Embodiments of the present methods may be used to produce energy in the form of an electrical current from water without the use of fossil fuel. Silicon hydride is very easy to make. This procedure in conjunction with an enzyme to produce hydrogen gas for fuel cells and other small devices. In fuel cells the production of protons may be bypassed, and an oxidant such as permanganate or oxygen from air may be used to drive the fuel cells. In such an embodiment, an intermediate reaction may not be needed to produce protons. In one embodiment, membrane-less laminar flow fuel cells with an external grid for oxygen supply from the air may be used.

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

Thiolated silicone oil: Synthesis, gelling and mucoadhesive properties

Science.gov (United States)

Partenhauser, Alexandra; Laffleur, Flavia; Rohrer, Julia; Bernkop-Schnürch, Andreas

2015-01-01

The aim of this study was the development of novel thiolated silicone oils and their evaluation with regard to gelling and mucoadhesive properties. A thiol coupling of 220 ± 14 and 127 ± 33 μmol/g polymer for 3-mercaptopropionic acid (MPA)- and cysteine-coupled silicone oil was determined, respectively. The dynamic viscosity of MPA–silicone raised significantly (p Thiolated silicone oils can be regarded superior in comparison to commonly used silicone oils due to a prolonged retention time in the small intestine as site of action. Gelling and mucoadhesive features are advantageous for antiflatulent as well as mucoprotective biomaterials. Thus, these novel thiomers seem promising for an upgrade of currently available products for the treatment of dyspepsia, reflux oesophagitis and even inflammatory bowel diseases such as ulcerative colitis or Crohn’s disease. PMID:25660565

Ionizing Energy Depositions After Fast Neutron Interactions in Silicon

CERN Document Server

Bergmann, Benedikt; Caicedo, Ivan; Kierstead, James; Takai, Helio; Frojdh, Erik

2016-01-01

In this study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. We show and interpret representative measured energy spectra. By separating the ionizing energy losses of the recoil silicon from energy depositions by products of nuclear reactions, the competition of ionizing (IEL) and non-ionizing energy losses (NIEL) of a recoil silicon within the silicon lattice was investigated. The data give supplementary information to the results of a previous measurement and are compared with different theoretical predictions.

Silicon sensor probing and radiation studies for the LHCb silicon tracker

International Nuclear Information System (INIS)

Lois, Cristina

2006-01-01

The LHCb Silicon Tracker (ST) will be built using silicon micro-strip technology. A total of 1400 sensors, with strip pitches of approximately 200μm and three different substrate thicknesses, will be used to cover the sensitive area with readout strips up to 38cm in length. We present the quality assurance program followed by the ST group together with the results obtained for the first batches of sensors from the main production. In addition, we report on an investigation of the radiation hardness of the sensors. Prototype sensors were irradiated with 24GeV/c protons up to fluences equivalent to 20 years of LHCb operation. The damage coefficient for the leakage current was studied, and full depletion voltages were determined

Development of Ultra-Fast Silicon Detectors for 4D tracking

Science.gov (United States)

Staiano, A.; Arcidiacono, R.; Boscardin, M.; Dalla Betta, G. F.; Cartiglia, N.; Cenna, F.; Ferrero, M.; Ficorella, F.; Mandurrino, M.; Obertino, M.; Pancheri, L.; Paternoster, G.; Sola, V.

2017-12-01

In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ~ 10 ps and ~ 10 μm with a 50 μm thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ~10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 μm thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

Functionalized mesoporous silicon for targeted-drug-delivery.

Science.gov (United States)

Tabasi, Ozra; Falamaki, Cavus; Khalaj, Zahra

2012-10-01

The present work concerns a preliminary step in the production of anticancer drug loaded porous silicon (PSi) for targeted-drug-delivery applications. A successful procedure for the covalent attachment of folic acid, polyethylene glycol (PEG) and doxorubicin to hydrophilic mesoporous silicon layers is presented. A systematic approach has been followed to obtain the optimal composition of the N,N'-dicyclohexylcarbodiimide (DCC)/N-hydroxysuccimide (NHS) in dimethylsulfoxide (DMSO) solution for the surface activation process of the undecylenic acid (UD) grafted molecules to take place with minimal undesired byproduct formation. The effect of reactant concentration and kind of solvent (aqueous or DMSO) on the attachment of folic acid to the activated PSi layer has been investigated. The covalent attachment of the doxorubicin molecules to the PSi layer functionalized with folic acid and PEG is discussed. The drug release kinetics as a function of pH has been studied. The functionalized PSi particles show a high cytotoxicity compared to the equivalent amount of free drug. Cell toxicity tests show clearly that the incorporation of folate molecules increases substantially the toxicity of the loaded PSi particles. Accordingly this new functionalized PSi may be considered a proper candidate for targeted drug delivery. Copyright © 2012 Elsevier B.V. All rights reserved.

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

Energy Technology Data Exchange (ETDEWEB)

Wohlgemuth, J.; Narayanan, M.

2006-07-01

The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

Electrophysical properties of silicon doped by palladium-103 isotope

International Nuclear Information System (INIS)

Makhkamov, Sh.; Tursunov, N.A.; Sattiev, A.R.; Normurodov, A.B.

2007-01-01

The work is devoted to study of radiation physical processes taking place in Si under nuclear transmutation, Identification and determination of defects microstructure and homogeneities and their distribution, study of interactions of nuclear-transformed phosphorus isotopes with palladium atoms, and its effect on crystal properties. For examination monocrystalline silicon of n- and p-type conductivity with specific resistance from 1 to 40 Ω·cm, dislocation density ∼10 4 cm -2 and oxygen content ∼10 17 cm -3 has been applied. Doping of silicon plates by examined admixture has been carried out by thermal diffusion method within temperature range 1000-1250 deg. C for 0.5- 5 h. Irradiation of doped silicon was conducted by reactor neutron fluences 5·10 18 - 5·10 19 cm -2 with subsequent annealing at 1000 deg. C for 30 min. Efficiency of mixture centers formation in silicon, effect of concentration of formed mixture-defect centers on electro-physical, photoelectric and recombination parameters of doped silicon and revealing of type and state of generated defects have been controlled by electric, volume and X-ray fluorescent methods. On the base of spectroscopic researches it is shown, that in silicon forbidden zone after Pd diffusion in DLTS spectra peaks related with acceptor (E c -0.18 and E v +0.34 eV) levels, and peak responsible for level E v +0.32 eV of donor character caused by palladium impurity. It is shown, that irradiation of doped silicon samples by neutrons lead to nuclear transmutation of 102 Pd, 104 Pd in 103 Pd isotopes in the crystal volume with following electron capture in stable isotope 103m Rh

Development in fiscal 1998 of silicon manufacturing process to rationalize energy usage. Surveys and researches on analysis of practical application of technology to manufacture silicon raw materials for solar cells; 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

With an objective to develop a mass production technology to manufacture silicon raw materials for solar cells, and assist its practical application, surveys and analyses were performed on trends in development of the related technologies, the problems therein , market trends and industrial trends thereof. This paper summarizes the achievements in fiscal 1998. The worldwide production amount of solar cells in 1998 is estimated to have achieved 150 MW, and the silicon consumption reached the level of 2,300 tons. In spite of the economic recession environment, there was no change in the expansion trend. In developing an SOG-Si mass production and manufacturing technology, construction of pilot plants for each process has been completed, and entered into the operation research phase. In developing a technology to manufacture high quality poly-crystalline silicon substrates, fabrication has been completed on the on-line ingot cutting equipment and the plasma heating equipment, and the stage is now in operation research of continuous electromagnetic casting process. The conversion efficiency of the poly-crystalline silicon solar cells is 14 to 16% at the mass production level, whose enhancement requires indispensably the improvement in quality of the substrate. Discussions are required on the ingot manufacturing conditions in coordination with improvement in the cell manufacturing technology. (NEDO)

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

The importance of silicon photovoltaic manufacturing in Saudi Arabia

International Nuclear Information System (INIS)

Elani, U.A.; Bagazi, S.A.

1998-01-01

In this paper, the potential of silicon development for photovoltaics will be discussed in conjunction with the availability of raw material and photovoltaic demand in Saudi Arabia. Recent studies suggest that silicon raw material for photovoltaic production should be considered for further investigation towards solar cells manufacturing in Saudi Arabia. (author)

Mesoporous silicon synthesis and applications in Li-ion batteries and solar hydrogen fuel cells

Science.gov (United States)

Wang, Donghai; Dai, Fang; Yi, Ran; Zai, Jianto

2017-05-23

We provide a mesoporous silicon material (PSi) prepared via a template-free and HF-free process. The production process is facile and scalable, and it may be conducted under mild reaction conditions. The silicon may be produced directly by the reduction of a silicon-halogenide precursor (for example, SiCl.sub.4) with an alkaline alloy (for example, NaK alloy). The resulting Si-salt matrix is then annealed for the pore formation and crystallite growth. Final product is obtained by removal of the salt by-products with water.

Iron solubility in highly boron-doped silicon

International Nuclear Information System (INIS)

McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

1998-01-01

We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

Electrodialysis separation of rhenium from silicon

International Nuclear Information System (INIS)

Prasolova, O.D.; Borisova, L.V.; Ermakov, A.N.

1989-01-01

A method of separation of ruthenium from silicon by electrodialysis with heterogenuos ion-exchange membranes is developed. The effeciency of purification of rhenium from silicon depending on the number of dialyzer chambers, temperature and pH value of the dialyzate is studed. It is found that an addditional fourth chamber between the middle and anolytic ones causes the purification coefficient increase 50 times. It is necessary to cool the dialyzate in order to reduce silicon migration into the anolyte and reverse diffusion of perrhenate-ion from the anolyte into the dialyzate. The optimal pH value of diaizate is 5.5-6. The method developed has been used for separating rhenium from industrial solution of lead production with complex composition

Analysis of the silicon market: Will thin films profit?

International Nuclear Information System (INIS)

Sark, W.G.J.H.M. van; Brandsen, G.W.; Fleuster, M.; Hekkert, M.P.

2007-01-01

The photovoltaic industry has been growing with astonishing rates over the past years. The supply of silicon to the wafer-based industry has recently become a problem. This paper presents a thorough analysis of the PV industry and quantifies the silicon shortage. It is expected that this leads to a decrease in production in 2006 rather than the usual increase. Due to a mismatch in expansion plans of silicon feedstock manufacturers and solar cell manufacturers, a large cell overcapacity will persist up to 2010. The thin-film PV market is expected to profit from the silicon shortage problem; its market share may substantially increase to about 25% in 2010

Analysis of the silicon market: Will thin films profit?

Energy Technology Data Exchange (ETDEWEB)

Sark, W.G.J.H.M. van; Brandsen, G.W. [Copernicus Institute for Sustainable Development and Innovation, Utrecht University, Utrecht (Netherlands). Department of Science, Technology and Society; Fleuster, M. [Solland Solar Energy, Heerlen (Netherlands); Hekkert, M.P. [Copernicus Institute for Sustainable Development and Innovation, Utrecht University, Utrecht (Netherlands). Department of Innovation Studies

2007-06-15

The photovoltaic industry has been growing with astonishing rates over the past years. The supply of silicon to the wafer-based industry has recently become a problem. This paper presents a thorough analysis of the PV industry and quantifies the silicon shortage. It is expected that this leads to a decrease in production in 2006 rather than the usual increase. Due to a mismatch in expansion plans of silicon feedstock manufacturers and solar cell manufacturers, a large cell overcapacity will persist up to 2010. The thin-film PV market is expected to profit from the silicon shortage problem; its market share may substantially increase to about 25% in 2010. (author)

Acrolein-activated matrix metalloproteinase 9 contributes to persistent mucin production.

Science.gov (United States)

Deshmukh, Hitesh S; Shaver, Colleen; Case, Lisa M; Dietsch, Maggie; Wesselkamper, Scott C; Hardie, William D; Korfhagen, Thomas R; Corradi, Massimo; Nadel, Jay A; Borchers, Michael T; Leikauf, George D

2008-04-01

Chronic obstructive pulmonary disease (COPD), a global public health problem, is characterized by progressive difficulty in breathing, with increased mucin production, especially in the small airways. Acrolein, a constituent of cigarette smoke and an endogenous mediator of oxidative stress, increases airway mucin 5, subtypes A and C (MUC5AC) production; however, the mechanism remains unclear. In this study, increased mMUC5AC transcripts and protein were associated with increased lung matrix metalloproteinase 9 (mMMP9) transcripts, protein, and activity in acrolein-exposed mice. Increased mMUC5AC transcripts and mucin protein were diminished in gene-targeted Mmp9 mice [Mmp9((-/-))] or in mice treated with an epidermal growth factor receptor (EGFR) inhibitor, erlotinib. Acrolein also decreased mTissue inhibitor of metalloproteinase protein 3 (an MMP9 inhibitor) transcript levels. In a cell-free system, acrolein increased pro-hMMP9 cleavage and activity in concentrations (100-300 nM) found in sputum from subjects with COPD. Acrolein increased hMMP9 transcripts in human airway cells, which was inhibited by an MMP inhibitor, EGFR-neutralizing antibody, or a mitogen-activated protein kinase (MAPK) 3/2 inhibitor. Together these findings indicate that acrolein can initiate cleavage of pro-hMMP9 and EGFR/MAPK signaling that leads to additional MMP9 formation. Augmentation of hMMP9 activity, in turn, could contribute to persistent excessive mucin production.

New Opportunities in Crystalline Silicon R and D

International Nuclear Information System (INIS)

Menna, P.

1998-01-01

To support the expected growth of the silicon solar cell industry, we believe that research and development (R ampersand D) activities should be carried out in the following areas: polysilicon feedstock for the PV industry; thin-layer silicon deposition methods, and more environmentally benign cell and module manufacturing processes. For each of these activities, we identify the main issues that needed to be addressed

Neutron activation analysis of low-level element contents in silicon wafers

Energy Technology Data Exchange (ETDEWEB)

Goerner, W [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany); Berger, A [Bundesanstalt fuer Materialforschung und -pruefung, Berlin (Germany); Niese, S [Verein fuer Kernverfahrenstechnik und Analytik Rossendorf e.V. (VKTA), Dresden (Germany); Koehler, M [Verein fuer Kernverfahrenstechnik und Analytik Rossendorf e.V. (VKTA), Dresden (Germany); Matthes, M [Verein fuer Kernverfahrenstechnik und Analytik Rossendorf e.V. (VKTA), Dresden (Germany); Gawlik, D [Hahn-Meitner-Institut, Berlin (Germany)

1997-03-01

Semiconductor silicon is among the purest materials having ever been produced by modern technology. Thus, it is quite suitable as a primary reference material validating the correctness and the detection capabilities of developed analytical methods. Among them neutron activation analysis plays a competitive role. The U.S. National Institute of Science and Technology (NIST) has initiated and carried out an interlaboratory comparison in order to study the spread of analytical results worldwide evolved by several laboratories dealing with specimens of extreme purity. The outcome of the experiment was intended to review the capabilities of NAA as well as to differentiate between bulk and surface contamination. (orig./DG)

Silicon photonics III systems and applications

CERN Document Server

Lockwood, David

2016-01-01

This book is volume III of a series of books on silicon photonics. It reports on the development of fully integrated systems where many different photonics component are integrated together to build complex circuits. This is the demonstration of the fully potentiality of silicon photonics. It contains a number of chapters written by engineers and scientists of the main companies, research centers and universities active in the field. It can be of use for all those persons interested to know the potentialities and the recent applications of silicon photonics both in microelectronics, telecommunication and consumer electronics market.

Nanoscale semiconducting silicon as a nutritional food additive

Energy Technology Data Exchange (ETDEWEB)

Canham, L T [pSiNutria Ltd, Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom)

2007-05-09

Very high surface area silicon powders can be realized by high energy milling or electrochemical etching techniques. Such nanoscale silicon structures, whilst biodegradable in the human gastrointestinal tract, are shown to be remarkably stable in most foodstuffs and beverages. The potential for using silicon to improve the shelf life and bioavailability of specific nutrients in functional foods is highlighted. Published drug delivery data implies that the nanoentrapment of hydrophobic nutrients will significantly improve their dissolution kinetics, through a combined effect of nanostructuring and solid state modification. Nutrients loaded to date include vitamins, fish oils, lycopene and coenzyme Q10. In addition, there is growing published evidence that optimized release of orthosilicic acid, the biodegradation product of semiconducting silicon in the gut, offers beneficial effects with regard bone health. The utility of nanoscale silicon in the nutritional field shows early promise and is worthy of much further study.

Nanoscale semiconducting silicon as a nutritional food additive

International Nuclear Information System (INIS)

Canham, L T

2007-01-01

Very high surface area silicon powders can be realized by high energy milling or electrochemical etching techniques. Such nanoscale silicon structures, whilst biodegradable in the human gastrointestinal tract, are shown to be remarkably stable in most foodstuffs and beverages. The potential for using silicon to improve the shelf life and bioavailability of specific nutrients in functional foods is highlighted. Published drug delivery data implies that the nanoentrapment of hydrophobic nutrients will significantly improve their dissolution kinetics, through a combined effect of nanostructuring and solid state modification. Nutrients loaded to date include vitamins, fish oils, lycopene and coenzyme Q10. In addition, there is growing published evidence that optimized release of orthosilicic acid, the biodegradation product of semiconducting silicon in the gut, offers beneficial effects with regard bone health. The utility of nanoscale silicon in the nutritional field shows early promise and is worthy of much further study

Effect of Silicon on Desulfurization of Aluminum-killed Steels

Science.gov (United States)

Roy, Debdutta

controlled by mass transfer in the metal and slag phase mass transfer has a minor effect on the overall desulfurization kinetics. The model results are in agreement with the experimental data for the change in sulfur, silicon and aluminum contents with time which renders credibility to the underlying hypothesis of the kinetic model. Although the change of sulfur content with time is not very sensitive to the activity data source, the change of aluminum and silicon contents with time depend on the activity data source. The experimental results demonstrate that if the silicon content in the steel is high enough, the silicon can reduce the alumina from the slag and thus the steel melt will pick up aluminum. This can cause significant savings in aluminum consumption. For most of the slag compositions used in the experiments, the overall mass transfer is only limited by the steel phase and the slag phase mass transfer can be neglected for most practical cases. Mass balance calculations in the experiments support the basis of the model and also show that with respect to aluminum consumption, silica reduction is the main aluminum consuming (or production) reaction and the desulfurization reaction is only a secondary consumer of aluminum. Results from the plant trials conducted to test the effect of silicon on ladle desulfurization show that the rate and extent of desulfurization increase with the increase of the initial Si content, so in the ladle refining process, adding all the silicon in the beginning with the aluminum and the fluxes will be beneficial and could save considerable processing time at the ladle. The aluminum consumption for the heats with silicon added in the beginning (both in terms of the Al added to the steel and as slag deoxidants) is considerably lower compared to the cases where the silicon is added at the end. However, on a relative cost term, aluminum and silicon are similarly priced so substitution would not offer a major cost advantage.

Silicon mediated biochemical changes in wheat under salinized and ...

African Journals Online (AJOL)

Silicon (Si) can alleviate salinity damage, a major threat to agriculture that causes instability in wheat production. We report on the effects of silicon (150 mg L-1) on the morphological, physiological and biochemical traits in wheat (Triticum aestivum L.) cultivars (salt sensitive; Auqab-2000 and salt tolerant; SARC-5) differing ...

Semiconductors and semimetals oxygen in silicon

CERN Document Server

Willardson, Robert K; Beer, Albert C; Shimura, Fumio

1994-01-01

This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen.Key Features* Comprehensive study of the behavior of oxygen in silicon* Discusses silicon crystals for VLSI and ULSI applications* Thorough coverage from crystal growth to device fabrication* Edited by technical experts in the field* Written by recognized authorities from industrial and academic institutions* Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research* 297 original line drawings

Formation of copper precipitates in silicon

Science.gov (United States)

Flink, Christoph; Feick, Henning; McHugo, Scott A.; Mohammed, Amna; Seifert, Winfried; Hieslmair, Henry; Heiser, Thomas; Istratov, Andrei A.; Weber, Eicke R.

1999-12-01

The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and quench to room temperature. With the Transient Ion Drift (TID) technique on p-type silicon a critical Fermi level position at EC-0.2 eV was found. Only if the Fermi level position, which is determined by the concentrations of the acceptors and the copper donors, surpasses this critical value precipitation takes place. If the Fermi level is below this level the supersaturated interstitial copper diffuses out. An electrostatic precipitation model is introduced that correlates the observed precipitation behavior with the electrical activity of the copper precipitates as detected with Deep Level Transient Spectroscopy (DLTS) on n-type and with Minority Carrier Transient Spectroscopy (MCTS) on p-type silicon.

GH32 family activity: a topological approach through protein contact networks.

Science.gov (United States)

Cimini, Sara; Di Paola, Luisa; Giuliani, Alessandro; Ridolfi, Alessandra; De Gara, Laura

2016-11-01

The application of Protein Contact Networks methodology allowed to highlight a novel response of border region between the two domains to substrate binding. Glycoside hydrolases (GH) are enzymes that mainly hydrolyze the glycosidic bond between two carbohydrates or a carbohydrate and a non-carbohydrate moiety. These enzymes are involved in many fundamental and diverse biological processes in plants. We have focused on the GH32 family, including enzymes very similar in both sequence and structure, each having however clear specificities of substrate preferences and kinetic properties. Structural and topological differences among proteins of the GH32 family have been here identified by means of an emerging approach (Protein Contact network, PCN) based on the formalization of 3D structures as contact networks among amino-acid residues. The PCN approach proved successful in both reconstructing the already known functional domains and in identifying the structural counterpart of the properties of GH32 enzymes, which remain uncertain, like their allosteric character. The main outcome of the study was the discovery of the activation upon binding of the border (cleft) region between the two domains. This reveals the allosteric nature of the enzymatic activity for all the analyzed forms in the GH32 family, a character yet to be highlighted in biochemical studies. Furthermore, we have been able to recognize a topological signature (graph energy) of the different affinity of the enzymes towards small and large substrates.

Ethanol-water separation by pervaporation using silicone and polyvinyl alcohol membranes

Directory of Open Access Journals (Sweden)

Chinchiw, S.

2006-09-01

Full Text Available In this research, experiments were carried out to investigate the effects of operating parameters onthe pervaporation performance for the separation of ethanol-water solutions. Composite silicone membranessupported on polysulfone prepared with varied silicone contents and commercial polyvinyl alcohol (Pervap®2211, Sulzer membranes were used. The results showed that the composite silicone/polysulfone membranescoated with 3 wt% of silicone exhibited highest permeation flux with slightly lower separation factor forethanol. Furthermore, it was found that the composite silicone/polysulfone membranes were suitable for theseparation of ethanol from a dilute ethanol solutions. Both the separation factor and permeation flux of the composite membranes increased with increasing temperature and feed concentration. A membrane coated with a 7 wt% silicone gave highest separation factor of 7.32 and permeation flux of 0.44 kg/m2h at 5 wt% ethanol feed concentration and feed temperature of 70ºC. For polyvinyl alcohol membranes, the results showed that the membranes were suitable for the dehydration of concentrated ethanol solutions. The permeation flux increased and the separation factor for water decreased with increasing water feed concentration and temperature. The membrane gave highest separation factor of 248 and permeation flux of 0.02 kg/m2h at 5 wt% water feed concentration and feed temperature of 30ºC.

Determination of activation parameters for the core transformation of the screw dislocation in silicon

International Nuclear Information System (INIS)

Guénolé, J; Godet, J; Pizzagalli, L

2010-01-01

The non-dissociated screw dislocation in a model covalent material like silicon is known to exist in three possible stable core configurations. We performed calculations combining the nudged elastic band technique and a semi-empirical description in order to determine mechanisms and activation parameters for transforming one core into another. Our results showed that a glide core is necessarily reconstructed, since the energy barrier for reconstruction is easily overcome by thermal activation. Conversely, a transformation between a shuffle and a glide core appears unlikely at low temperature, which raises questions about the existence of the double-period glide configuration

Silicon diode for measurement of integral neutron dose and method of its production

International Nuclear Information System (INIS)

Frank, H.; Seda, J.; Trousil, J.

1978-01-01

The silicon diode consists of an N or P type silicon plate having a specific resistance exceeding 10 ohm.cm and minority carrier life exceeding 100μs. The plate thickness is a quintuple to a ten-tuple of the diffusion length and the plate consists of layers. Ions of, eg., boron, at a concentration exceeding 10 14 cm -2 are implanted into the P + type silicon layer and a layer of a metal, eg., nickel, is deposited onto it. Ions of eg., phosphorus, at a concentration exceeding 10 14 cm -2 are implanted in the N + type layer and a metal layer, eg., nickel is again depositeJ onto it. Implantation proceeds at an ion acceleration voltage of 10 to 200 kV. Metal layer deposition follows, and simultaneously with annealing of the P + and N + types of silicon layers, the metal layers are annealed at 600 to 900 degC for 1 to 60 minutes with subsequent temperature decrease at a rate less than 10 degC/min, down to a temperature of 300 degC. (J.P.)

Effect of potential steps on porous silicon formation

International Nuclear Information System (INIS)

Cheng Xuan; Feng Zude; Luo Guangfeng

2003-01-01

Porous silicon microstructures were fabricated by applying potential steps through which both anodic and cathodic potentials were periodically applied to silicon wafers. The electrochemical behaviors of porous silicon layers were examined by performing polarization measurements, followed by analyzing the open-circuit potential (E ocp ) and the reaction rate in terms of corrosion current density (j corr ). The surface morphologies and surface products of porous silicon were characterized by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). It was found that the values of E ocp and j corr varied more significantly and irregularly during different polarization stages when the potentials were continuously applied to the wafer surface, while virtually unchanged after 2 min of periodic potential application. In addition, slower reaction rates were observed with applying potential steps, as indicated by smaller values of j corr . The enhancement on refreshment of silicon surfaces by periodic potential polarization significantly accelerated the growth of porous silicon. The microstructures became more uniformed and better defined due to the improved passivating nature of wafer surfaces

Antimycobacterial and nitric oxide production inhibitory activities of Ocotea notata from Brazilian restinga.

Science.gov (United States)

Costa, Isabela Francisca Borges; Calixto, Sanderson Dias; Heggdorne de Araujo, Marlon; Konno, Tatiana Ungaretti Paleo; Tinoco, Luzineide Wanderley; Guimarães, Denise Oliveira; Lasunskaia, Elena B; Leal, Ivana Ramos Correa; Muzitano, Michelle Frazão

2015-01-01

The genus Ocotea (Lauraceae) is distributed mainly in tropical and subtropical regions. Some species of this genus as O. puberula and O. quixos have been described in the literature, showing antibacterial activity. And Ocotea macrophylla showed anti-inflammatory activity with inhibition of COX-1, COX-2, and LOX-5. The purpose of this study was the phytochemical investigation of the plant species Ocotea notata from Restinga Jurubatiba National Park, Macaé, RJ, Brazil, and the search for antimycobacterial fractions and compounds. The crude extract was evaluated for antimycobacterial activity and presented 95.75 ± 2.53% of growth inhibition at 100 µg/mL. Then, it was subjected to a liquid-liquid partition and subsequently was chemically investigated by HPLC, revealing the major presence of flavonoids. In this process the partition fractions hexane, ethyl acetate, and butanol are shown to be promising in the antimycobacterial assay. In addition, ethyl acetate fraction was chromatographed and afforded two flavonoids identified by MS and NMR as afzelin and isoquercitrin. The isolated flavonoids afzelin and isoquercitrin were evaluated for their antimycobacterial activity and for their ability to inhibit NO production by macrophages stimulated by LPS; both flavonoids isoquercitrin (Acet22) and afzelin (Acet32) were able to inhibit the production of NO by macrophages. The calculated IC50 of Acet22 and Acet32 was 1.03 and 0.85 µg/mL, respectively.

Antimycobacterial and Nitric Oxide Production Inhibitory Activities of Ocotea notata from Brazilian Restinga

Science.gov (United States)

Costa, Isabela Francisca Borges; Calixto, Sanderson Dias; Heggdorne de Araujo, Marlon; Konno, Tatiana Ungaretti Paleo; Tinoco, Luzineide Wanderley; Guimarães, Denise Oliveira; Lasunskaia, Elena B.; Leal, Ivana Ramos Correa; Muzitano, Michelle Frazão

2015-01-01

The genus Ocotea (Lauraceae) is distributed mainly in tropical and subtropical regions. Some species of this genus as O. puberula and O. quixos have been described in the literature, showing antibacterial activity. And Ocotea macrophylla showed anti-inflammatory activity with inhibition of COX-1, COX-2, and LOX-5. The purpose of this study was the phytochemical investigation of the plant species Ocotea notata from Restinga Jurubatiba National Park, Macaé, RJ, Brazil, and the search for antimycobacterial fractions and compounds. The crude extract was evaluated for antimycobacterial activity and presented 95.75 ± 2.53% of growth inhibition at 100 µg/mL. Then, it was subjected to a liquid-liquid partition and subsequently was chemically investigated by HPLC, revealing the major presence of flavonoids. In this process the partition fractions hexane, ethyl acetate, and butanol are shown to be promising in the antimycobacterial assay. In addition, ethyl acetate fraction was chromatographed and afforded two flavonoids identified by MS and NMR as afzelin and isoquercitrin. The isolated flavonoids afzelin and isoquercitrin were evaluated for their antimycobacterial activity and for their ability to inhibit NO production by macrophages stimulated by LPS; both flavonoids isoquercitrin (Acet22) and afzelin (Acet32) were able to inhibit the production of NO by macrophages. The calculated IC50 of Acet22 and Acet32 was 1.03 and 0.85 µg/mL, respectively. PMID:25789338

Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Directory of Open Access Journals (Sweden)

Jia Ge

2014-01-01

Full Text Available We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

Crystallization induced of amorphous silicon by nickel

International Nuclear Information System (INIS)

Schmidt, J.A; Rinaldi, P; Budini, N; Arce, R; Buitrago, R.H

2008-01-01

Polycrystalline silicon (pc-Si) deposited on glass substrates is a very promising material for the production of different electronic devices, like thin film transistors, active matrices or solar cells. The crystallization of the amorphous silicon to obtain pc-Si can be achieved with different processes, among which nickel-induced crystallization is because it requires low concentrations of the metal and low annealing temperatures. Nucleation and growth of crystalline silicon are measured by the formation of silicide NiSi 2 , which has a lattice constant very similar to that of Si, and acts as a seed upon which crystalline grains can develop. The size of the pc-Si final grain depends on many factors, such as the initial concentration of Ni, the annealing time and temperature, and the presence of other atoms in the Si structure. This work presents a study on the influence of these parameters on the silicon crystallization process induced by Ni. We deposited a series of hydrogenated amorphous silicon samples (a-Si:H) on glass substrates, using the plasma-enhanced chemical vapor deposition method (PE-CVD) with silane gas (SiH 4 ). The deposition temperature was 200 o C, and we prepared intrinsic samples (i), lightly doped with boron (p), heavily doped with boron (p + ) and heavily doped with phosphorous (n + ). Each sample was divided into eight portions, depositing different concentrations of Ni into each one using the cathodic sputtering method. The concentration of Ni was determined by atomic adsorption spectroscopy, and included from 1.5 1 0 15 to 1.5 1 0 16 at/cm 2 . Later the samples were submitted to different thermal treatments in a circulating nitrogen atmosphere. In order to avoid violent dehydrogenation of the a-Si:H that damages the samples, the annealing was carried out gradually. In a first stage the samples were heated at a velocity of 0.5 o C /min up to 400 o C, holding them for 24 hrs at this temperature in order to reach hydrogen effusion. Heating

The enzymatic preparation of [α-32P]nucleoside triphosphates, cyclic [32P]AMP, and cyclic [32P]GMP

International Nuclear Information System (INIS)

Walseth, T.F.; Johnson, R.A.

1979-01-01

A method has been developed for the enzymatic preparation of α- 32 P-labelled ribo- and deoxyribonucleoside triphosphates, cyclic [ 32 P]AMP, and cyclic [ 32 P]GMP of high specific radioactivity and in high yield from 32 Psub(i). The method also enables the preparation of [γ- 32 P]ATP, [γ- 32 P]GTP, [γ- 32 P]ITP, and [γ- 32 P]-dATP of very high specific activity and in high yield. (Auth.)

Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

International Nuclear Information System (INIS)

Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

2015-01-01

Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

Impurities in silicon and their impact on solar cell performance

NARCIS (Netherlands)

Coletti, Gianluca

2011-01-01

Photovoltaic conversion of solar energy is a rapidly growing technology. More than 80% of global solar cell production is currently based on silicon. The aim of this thesis is to understand the complex relation between impurity content of silicon starting material (“feedstock”) and the resulting

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Reaction studies of hot silicon, germanium and carbon atoms

International Nuclear Information System (INIS)

Gaspar, P.P.

1990-01-01

The goal of this project was to increase the authors understanding of the interplay between the kinetic and electronic energy of free atoms and their chemical reactivity by answering the following questions: (1) what is the chemistry of high-energy carbon silicon and germanium atoms recoiling from nuclear transformations; (2) how do the reactions of recoiling carbon, silicon and germanium atoms take place - what are the operative reaction mechanisms; (3) how does the reactivity of free carbon, silicon and germanium atoms vary with energy and electronic state, and what are the differences in the chemistry of these three isoelectronic atoms? This research program consisted of a coordinated set of experiments capable of achieving these goals by defining the structures, the kinetic and internal energy, and the charge states of the intermediates formed in the gas-phase reactions of recoiling silicon and germanium atoms with silane, germane, and unsaturated organic molecules, and of recoiling carbon atoms with aromatic molecules. The reactions of high energy silicon, germanium, and carbon atoms created by nuclear recoil were studied with substrates chosen so that their products illuminated the mechanism of the recoil reactions. Information about the energy and electronic state of the recoiling atoms at reaction was obtained from the variation in end product yields and the extent of decomposition and rearrangement of primary products (usually reactive intermediates) as a function of total pressure and the concentration of inert moderator molecules that remove kinetic energy from the recoiling atoms and can induce transitions between electronic spin states. 29 refs

Waveguide cores containing silicon nanocrystals as active spectral filters for silicon-based photonics

Czech Academy of Sciences Publication Activity Database

Pelant, Ivan; Ostatnický, T.; Valenta, J.; Luterová, Kateřina; Skopalová, Eva; Mates, Tomáš; Elliman, R. G.

2006-01-01

Roč. 83, - (2006), s. 87-91 ISSN 0946-2171 R&D Projects: GA ČR(CZ) GA202/03/0789; GA ČR(CZ) GP202/01/D030; GA AV ČR(CZ) IAA1010316; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon nanocrystals * planar waveguides * leaky modes Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.023, year: 2006

Effects of Silicon Amendment on Soilborne and Fruit Diseases of Avocado

Directory of Open Access Journals (Sweden)

Elizabeth K. Dann

2017-10-01

Full Text Available The effects of silicon (Si amendment have been studied in several plant/pathogen interactions; however, studies in horticultural tree crops are limited. Effects of amendment with soluble potassium silicate (AgSil®32, approximately 30% available Si, or milled cement building board by-products (Mineral Mulch (MM or Mineral Dust (MD, containing 5% available Si were investigated in field and greenhouse trials with avocado. Orchard soil drench applications with potassium silicate improved yield and quality of fruit, but visual health of trees declining from Phytophthora root rot (PRR was not affected. Orchard spray or trunk injection applications with potassium silicate were ineffective. Amendment of potting mix with MM and MD reduced root necrosis of avocado seedlings after inoculation with Calonectria ilicicola, an aggressive soilborne pathogen causing black root rot. Application of MM to mature orchard trees declining with PRR had a beneficial effect on visual tree health, and Si accumulation in leaves and fruit peel, after only 10 months. Products that deliver available Si consistently for uptake are likely to be most successful in perennial tree crops.

Resistivity distribution of silicon single crystals using codoping

Science.gov (United States)

Wang, Jong Hoe

2005-07-01

Numerous studies including continuous Czochralski method and double crucible technique have been reported on the control of macroscopic axial resistivity distribution in bulk crystal growth. The simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. Wang [J. Crystal Growth 275 (2005) e73] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals and relatively uniform profile is possible by B-P codoping method. In this work, the basic characteristic of 8 in silicon single crystal grown using codoping method is studied and whether proposed method has advantage for the silicon crystal growth is discussed.

Achievement report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Investigation and research on analyzing practical application of a technology to manufacture solar cell silicon raw materials; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

This paper describes the achievement in fiscal 1997 of analyzing practical application of a technology to manufacture solar cell silicon raw materials. Silicon consumption for solar cells in fiscal 1997 has increased to 2000-ton level, and the supply has been very tight. For drastic improvement in the demand and supply situation, development of SOG-Si manufacturing technology and its early practical application are desired. The development of the NEDO mass-production technology using melting and refining has completed constructing the process facilities in fiscal 1998, and will enter the stage of operational research. However, insufficiency in the basic data about behavior of impurities is inhibiting the development. In the substrate manufacturing technology, discussions have shown progress on use of diversifying silicons outside the standard by using the electromagnetic casting process. For slicing and processing the substrates, development of a high-performance slicing equipment and automatic rough rinsing machine is under way. Properties required on silicon raw materials vary considerably widely because of difference in cell making systems and conditions, which is attributable to unknown impurity behavior. When 1GW production is assumed, the cell module manufacturing cost is calculated as 137 yen/W, for which low-cost mass production for its realization, slicing productivity enhancement, and cost reduction are required. The paper also describes site surveys in overseas countries. (NEDO)

A Silicon SPECT System for Molecular Imaging of the Mouse Brain.

Science.gov (United States)

Shokouhi, Sepideh; Fritz, Mark A; McDonald, Benjamin S; Durko, Heather L; Furenlid, Lars R; Wilson, Donald W; Peterson, Todd E

2007-01-01

We previously demonstrated the feasibility of using silicon double-sided strip detectors (DSSDs) for SPECT imaging of the activity distribution of iodine-125 using a 300-micrometer thick detector. Based on this experience, we now have developed fully customized silicon DSSDs and associated readout electronics with the intent of developing a multi-pinhole SPECT system. Each DSSD has a 60.4 mm × 60.4 mm active area and is 1 mm thick. The strip pitch is 59 micrometers, and the readout of the 1024 strips on each side gives rise to a detector with over one million pixels. Combining four high-resolution DSSDs into a SPECT system offers an unprecedented space-bandwidth product for the imaging of single-photon emitters. The system consists of two camera heads with two silicon detectors stacked one behind the other in each head. The collimator has a focused pinhole system with cylindrical-shaped pinholes that are laser-drilled in a 250 μm tungsten plate. The unique ability to collect projection data at two magnifications simultaneously allows for multiplexed data at high resolution to be combined with lower magnification data with little or no multiplexing. With the current multi-pinhole collimator design, our SPECT system will be capable of offering high spatial resolution, sensitivity and angular sampling for small field-of-view applications, such as molecular imaging of the mouse brain.

A Heat and Mass Transfer Model of a Silicon Pilot Furnace

Science.gov (United States)

Sloman, Benjamin M.; Please, Colin P.; Van Gorder, Robert A.; Valderhaug, Aasgeir M.; Birkeland, Rolf G.; Wegge, Harald

2017-10-01

The most common technological route for metallurgical silicon production is to feed quartz and a carbon source ( e.g., coal, coke, or charcoal) into submerged-arc furnaces, which use electrodes as electrical conductors. We develop a mathematical model of a silicon furnace. A continuum approach is taken, and we derive from first principles the equations governing the time evolution of chemical concentrations, gas partial pressures, velocity, and temperature within a one-dimensional vertical section of a furnace. Numerical simulations are obtained for this model and are shown to compare favorably with experimental results obtained using silicon pilot furnaces. A rising interface is shown to exist at the base of the charge, with motion caused by the heating of the pilot furnace. We find that more reactive carbon reduces the silicon monoxide losses, while reducing the carbon content in the raw material mixture causes greater solid and liquid material to build-up in the charge region, indicative of crust formation (which can be detrimental to the silicon production process). We also comment on how the various findings could be relevant for industrial operations.

Formation of iron disilicide on amorphous silicon

Science.gov (United States)

Erlesand, U.; Östling, M.; Bodén, K.

1991-11-01

Thin films of iron disilicide, β-FeSi 2 were formed on both amorphous silicon and on crystalline silicon. The β-phase is reported to be semiconducting with a direct band-gap of about 0.85-0.89 eV. This phase is known to form via a nucleation-controlled growth process on crystalline silicon and as a consequence a rather rough silicon/silicide interface is usually formed. In order to improve the interface a bilayer structure of amorphous silicon and iron was sequentially deposited on Czochralski silicon in an e-gun evaporation system. Secondary ion mass spectrometry profiling (SIMS) and scanning electron micrographs revealed an improvement of the interface sharpness. Rutherford backscattering spectrometry (RBS) and X-ray diffractiometry showed β-FeSi 2 formation already at 525°C. It was also observed that the silicide growth was diffusion-controlled, similar to what has been reported for example in the formation of NiSi 2 for the reaction of nickel on amorphous silicon. The kinetics of the FeSi 2 formation in the temperature range 525-625°C was studied by RBS and the activation energy was found to be 1.5 ± 0.1 eV.

Surface Characteristics and Catalytic Activity of Copper Deposited Porous Silicon Powder

Directory of Open Access Journals (Sweden)

Muhammad Yusri Abdul Halim

2014-12-01

Full Text Available Porous structured silicon or porous silicon (PS powder was prepared by chemical etching of silicon powder in an etchant solution of HF: HNO3: H2O (1:3:5 v/v. An immersion time of 4 min was sufficient for depositing Cu metal from an aqueous solution of CuSO4 in the presence of HF. Scanning electron microscopy (SEM analysis revealed that the Cu particles aggregated upon an increase in metal content from 3.3 wt% to 9.8 wt%. H2-temperature programmed reduction (H2-TPR profiles reveal that re-oxidation of the Cu particles occurs after deposition. Furthermore, the profiles denote the existence of various sizes of Cu metal on the PS. The Cu-PS powders show excellent catalytic reduction on the p-nitrophenol regardless of the Cu loadings.

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

Science.gov (United States)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

Kaempferol impedes IL-32-induced monocyte-macrophage differentiation.

Science.gov (United States)

Nam, Sun-Young; Jeong, Hyun-Ja; Kim, Hyung-Min

2017-08-25

Kaempferol possesses a wide range of therapeutic properties, including antioxidant, anti-inflammatory, and anticancer properties. The present study sought to evaluate the effects and possible pharmacological mechanisms of kaempferol on interleukin (IL)-32-induced monocyte-macrophage differentiation. In this study, we performed flow cytometry assay, immunocytochemical staining, quantitative real-time PCR, enzyme-linked immuno sorbent assay, caspase-1 assay, and Western blotting to observe the effects and underlying mechanisms of kaempferol using the human monocyte cell line THP-1. The flow cytometry, immunocytochemical staining, and real-time PCR results show that kaempferol attenuated IL-32-induced monocyte differentiation to product macrophage-like cells. Kaempferol decreased the production and mRNA expression of pro-inflammatory cytokines, in this case thymic stromal lymphopoietin (TSLP), IL-1β, tumor necrosis factor (TNF)-α, and IL-8. Furthermore, kaempferol inhibited the IL-32-induced activation of p38 and nuclear factor-κB in a dose-dependent manner in THP-1 cells. Kaempferol also ameliorated the lipopolysaccharide-induced production of the inflammatory mediators TSLP, IL-1β, TNF-α, IL-8, and nitric oxide of macrophage-like cells differentiated by IL-32. In brief, our findings may provide new mechanistic insights into the anti-inflammatory effects of kaempferol. Copyright © 2017 Elsevier B.V. All rights reserved.

Integration of mask and silicon metrology in DFM

Science.gov (United States)

Matsuoka, Ryoichi; Mito, Hiroaki; Sugiyama, Akiyuki; Toyoda, Yasutaka

2009-03-01

We have developed a highly integrated method of mask and silicon metrology. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. We have inspected the high accuracy, stability and reproducibility in the experiments of integration. The accuracy is comparable with that of the mask and silicon CD-SEM metrology. In this report, we introduce the experimental results and the application. As shrinkage of design rule for semiconductor device advances, OPC (Optical Proximity Correction) goes aggressively dense in RET (Resolution Enhancement Technology). However, from the view point of DFM (Design for Manufacturability), the cost of data process for advanced MDP (Mask Data Preparation) and mask producing is a problem. Such trade-off between RET and mask producing is a big issue in semiconductor market especially in mask business. Seeing silicon device production process, information sharing is not completely organized between design section and production section. Design data created with OPC and MDP should be linked to process control on production. But design data and process control data are optimized independently. Thus, we provided a solution of DFM: advanced integration of mask metrology and silicon metrology. The system we propose here is composed of followings. 1) Design based recipe creation: Specify patterns on the design data for metrology. This step is fully automated since they are interfaced with hot spot coordinate information detected by various verification methods. 2) Design based image acquisition: Acquire the images of mask and silicon automatically by a recipe based on the pattern design of CD-SEM.It is a robust automated step because a wide range of design data is used for the image acquisition. 3) Contour profiling and GDS data generation: An image profiling process is applied to the acquired image based

Generation and manipulation of entangled photons on silicon chips

Directory of Open Access Journals (Sweden)

Matsuda Nobuyuki

2016-08-01

Full Text Available Integrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

Comparison of 1000-Centistoke versus 5000-Centistoke Silicone Oil in Complex Retinal Detachment Surgery.

Science.gov (United States)

Zafar, Shakir; Shakir, Munira; Mahmood, Syed Asaad; Amin, Saima; Iqbal, Zafar

2016-01-01

To compare the efficacy and complications of using 1000-centistoke versus 5000-centistoke silicone oil for complex retinal detachment repair. Case series. LRBT Tertiary Eye Hospital, Karachi, from January 2007 to June 2013. Eighty-five eyes (85 patients) presenting with superior rhegmatogenous retinal detachments associated with PVR grades B and C (involving not more than 3 clock hours) were randomized to either 1000 centistokes (n=44) or 5000 centistokes (n=41) silicone oil group. All patients underwent 23-gauge pars plana vitrectomy surgery with silicone oil intraocular tamponade. Patient data was analysed at 18 months post-operatively. IBM SPSS 21 was used for data analysis. There were 52 male and 33 female patients aged between 22 and 70 years (45.2 ±16.2). After the first surgery, successful reattachment of the retina was achieved in 67 eyes (78.8%); of which 35 eyes were in 1000-centistoke and 32 eyes in 5000-centistoke groups. Mean pre-operative Best Corrected Visual Acuity (BCVA) was 1.63 ±0.54 which was improved to a mean post-operative BCVAof 1.46 ±0.78 (1.42 ±0.74 in 1000-centistoke group; 1.49 ±0.78 in 5000 centistoke group). The 1000-centistoke group had a significantly higher frequency of oil emulsification which necessitated early removal of silicone oil. There were 66 eyes (77%) with at least one complication (34 eyes in 1000-centistoke group; 32 eyes in 5000-centistoke group) including cataract, corneal abnormalities, raised IOP, hypotony, vitreous haemorrhage and retinal redetachment. Although visual and anatomical outcomes were comparable between the two groups, the 1000-centistoke silicone oil group developed early oil emulsification necessitating its early removal.

Large volume cryogenic silicon detectors

International Nuclear Information System (INIS)

Braggio, C.; Boscardin, M.; Bressi, G.; Carugno, G.; Corti, D.; Galeazzi, G.; Zorzi, N.

2009-01-01

We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm 3 , cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

Preparing rare earth-silicon-iron-aluminum alloys

International Nuclear Information System (INIS)

Marchant, J.D.; Morrice, E.; Herve, B.P.; Wong, M.M.

1980-01-01

As part of its mission to assure the maximum recovery and use of the Nation's mineral resources, the Bureau of Mines, investigated an improved procedure for producing rare earth-silicon alloys. For example, a charge consisting of 681 grams of mixed rare-earth oxides, 309 grams of ferrosilicon (75 wt-pct Si), and 182 grams of aluminum metal along with a flux consisting of 681 grams of CaO and 45 grams of MgO was reacted at 1500 0 C in an induction furnace. Good slag-metal separation was achieved. The alloy product contained, in weight-percent, 53 RE, 28 Si, 11 Fe, and 4 Al with a rare earth recovery of 80 pct. In current industrial practice rare earth recoveries are usually about 60 pct in alloy products that contain approximately 30 wt-pct each of rare earths and silicon. Metallurgical evaluations showed the alloys prepared in this investigation to be as effective in controlling the detrimental effect of sulfur in steel and cast iron as the commercial rare earth-silicon-iron alloys presently used in the steel industry

Determination of phosphorus and silicon in tungsten trioxide as reduced molybdotungsten complexes without matrix separation

International Nuclear Information System (INIS)

Chkanikova, O.K.; Dorokhova, E.N.

1979-01-01

Studied are conditions of formation and reduction of molybdotungsten phosphorus (MTPC) and molybdotungsten silicon (MTSC) complexes at high excess of the ligand. It is established that MTPC are formed in a wide pH range, limited by aggregate stability of the solution (pH 4.5). Using the method of isomolar series it is shown that at pH 1.2 a complex with one Mo atom in coordination sphere is formed, at pH 3.2 - with two Mo atoms. Spectrophotometric method of phosphorus and silicon determination of tungsten trioxide without the base separation is developed. The method is based on silicon determination after MTPC decomposition in the presence of citric acid and determination of silicon and phosphorus sum under conditions of MTPC formation in the presence of oxalic acid. Phosphorus amount is determined according to the difference

TXRF analysis of trace metals in thin silicon nitride films

International Nuclear Information System (INIS)

Vereecke, G.; Arnauts, S.; Verstraeten, K.; Schaekers, M.; Heyrts, M.M.

2000-01-01

As critical dimensions of integrated circuits continue to decrease, high dielectric constant materials such as silicon nitride are being considered to replace silicon dioxide in capacitors and transistors. The achievement of low levels of metal contamination in these layers is critical for high performance and reliability. Existing methods of quantitative analysis of trace metals in silicon nitride require high amounts of sample (from about 0.1 to 1 g, compared to a mass of 0.2 mg for a 2 nm thick film on a 8'' silicon wafer), and involve digestion steps not applicable to films on wafers or non-standard techniques such as neutron activation analysis. A novel approach has recently been developed to analyze trace metals in thin films with analytical techniques currently used in the semiconductor industry. Sample preparation consists of three steps: (1) decomposition of the silicon nitride matrix by moist HF condensed at the wafer surface to form ammonium fluosilicate. (2) vaporization of the fluosilicate by a short heat treatment at 300 o C. (3) collection of contaminants by scanning the wafer surface with a solution droplet (VPD-DSC procedure). The determination of trace metals is performed by drying the droplet on the wafer and by analyzing the residue by TXRF, as it offers the advantages of multi-elemental analysis with no dilution of the sample. The lower limits of detection for metals in 2 nm thick films on 8'' silicon wafers range from about 10 to 200 ng/g. The present study will focus on the matrix effects and the possible loss of analyte associated with the evaporation of the fluosilicate salt, in relation with the accuracy and the reproducibility of the method. The benefits of using an internal standard will be assessed. Results will be presented from both model samples (ammonium fluoride contaminated with metallic salts) and real samples (silicon nitride films from a production tool). (author)

Environmentally benign silicon solar cell manufacturing

Energy Technology Data Exchange (ETDEWEB)

Tsuo, Y.S. [National Renewable Energy Lab., Golden, CO (United States); Gee, J.M. [Sandia National Labs., Albuquerque, NM (United States); Menna, P. [National Agency for New Technologies Energy and Environment, Portici (Italy); Strebkov, D.S.; Pinov, A.; Zadde, V. [Intersolarcenter, Moscow (Russian Federation)

1998-09-01

The manufacturing of silicon devices--from polysilicon production, crystal growth, ingot slicing, wafer cleaning, device processing, to encapsulation--requires many steps that are energy intensive and use large amounts of water and toxic chemicals. In the past two years, the silicon integrated-circuit (IC) industry has initiated several programs to promote environmentally benign manufacturing, i.e., manufacturing practices that recover, recycle, and reuse materials resources with a minimal consumption of energy. Crystalline-silicon solar photovoltaic (PV) modules, which accounted for 87% of the worldwide module shipments in 1997, are large-area devices with many manufacturing steps similar to those used in the IC industry. Obviously, there are significant opportunities for the PV industry to implement more environmentally benign manufacturing approaches. Such approaches often have the potential for significant cost reduction by reducing energy use and/or the purchase volume of new chemicals and by cutting the amount of used chemicals that must be discarded. This paper will review recent accomplishments of the IC industry initiatives and discuss new processes for environmentally benign silicon solar-cell manufacturing.

Silicon nanoparticles: Preparation, properties, and applications

International Nuclear Information System (INIS)

Chang Huan; Sun Shu-Qing

2014-01-01

Silicon nanoparticles have attracted great attention in the past decades because of their intriguing physical properties, active surface state, distinctive photoluminescence and biocompatibility. In this review, we present some of the recent progress in preparation methodologies and surface functionalization approaches of silicon nanoparticles. Further, their promising applications in the fields of energy and electronic engineering are introduced. (invited review — international conference on nanoscience and technology, china 2013)

Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Carey, JE; Mazur, E

2005-05-19

With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

Hybrid Design, Procurement and Testing for the LHCb Silicon Tracker

CERN Document Server

Bay, A; Frei, R; Jiménez-Otero, S; Perrin, A; Tran, MT; Van Hunen, J J; Vervink, K; Vollhardt, A; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Knöpfle, K T; Löchner, S; Schmelling, M; Schwingenheuer, B; Smale, N J; Adeva, B; Esperante-Pereira, D; Lois, C; Vázquez, P; Lehner, F; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Needham, M; Steinkamp, O; Straumann, U; Volyanskyy, D; Voss, H; Wenger, A

2005-01-01

The Silicon Tracker of the LHCb experiment consists of four silicon detector stations positioned along the beam line of the experiment. The detector modules of each station are constructed from wide pitch silicon microstrip sensors. Located at the module's end, a polyimide hybrid is housing the front-end electronics. The assembly of the more than 600 hybrids has been outsourced to industry. We will report on the design and production status of the hybrids for the LHCb Silicon Tracker and describe the quality assurance tests. Particular emphasis is laid on the vendor qualifying and its impact on our hybrid design that we experienced during the prototyping phase.

Consensus Modeling for Prediction of Estrogenic Activity of Ingredients Commonly Used in Sunscreen Products

Directory of Open Access Journals (Sweden)

Huixiao Hong

2016-09-01

Full Text Available Sunscreen products are predominantly regulated as over-the-counter (OTC drugs by the US FDA. The “active” ingredients function as ultraviolet filters. Once a sunscreen product is generally recognized as safe and effective (GRASE via an OTC drug review process, new formulations using these ingredients do not require FDA review and approval, however, the majority of ingredients have never been tested to uncover any potential endocrine activity and their ability to interact with the estrogen receptor (ER is unknown, despite the fact that this is a very extensively studied target related to endocrine activity. Consequently, we have developed an in silico model to prioritize single ingredient estrogen receptor activity for use when actual animal data are inadequate, equivocal, or absent. It relies on consensus modeling to qualitatively and quantitatively predict ER binding activity. As proof of concept, the model was applied to ingredients commonly used in sunscreen products worldwide and a few reference chemicals. Of the 32 chemicals with unknown ER binding activity that were evaluated, seven were predicted to be active estrogenic compounds. Five of the seven were confirmed by the published data. Further experimental data is needed to confirm the other two predictions.

Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine

Science.gov (United States)

Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.

2017-09-01

The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.

Product operator descriptions of INEPT and RINEPT NMR spectroscopies for ISn ( I=1/2, S=3/2) spin systems

Science.gov (United States)

Tokatlı, Ahmet; Gençten, Azmi; Şahin, Mükerrem; Tezel, Özden; Bahçeli, Semiha

2004-07-01

The product operator descriptions of INEPT and reverse INEPT (RINEPT) NMR experiments are introduced for weakly coupled ISn ( I=1/2, S=3/2 with n=1,2,3) spin systems. Explicit expressions for polarization transfer from spin-3/2 quadrupolar nuclei to spin-1/2 nuclei (and reversed polarization transfer) are given in detail by using the evolutions of product operators under the spin-spin coupling Hamiltonian. The results calculated for the intensities and positions of the observable signals are simulated in the molecules containning the 119Sn ( I=1/2) and 35Cl ( S=3/2) nuclei at the coupling constant of JSn-Cl=375 Hz by using the Maple programme on computer.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Crucial Role of Selenium in the Virucidal Activity of Benzisoselenazol-3(2H-ones and Related Diselenides

Directory of Open Access Journals (Sweden)

Jacek Mlochowski

2010-11-01

Full Text Available Various N-substituted benzisoselenazol-3(2H-ones and their non-selenium-containing analogues have been synthesized and tested against selected viruses (HHV-1, EMCV and VSV to determine the extent to which selenium plays a role in antiviral activity. The data presented here show that the presence of selenium is crucial for the antiviral properties of benzisoselenazol-3(2H-ones since their isostructural analogues having different groups but lacking selenium either did not show any antiviral activity or their activity was substantially lower. The open-chain analogues of benzisoselenazol-3(2H-ones—diselenides also exhibited high antiviral activity while selenides and disulfides were completely inactive towards model viruses.

Hydrogen-terminated mesoporous silicon monoliths with huge surface area as alternative Si-based visible light-active photocatalysts

KAUST Repository

Li, Ting

2016-07-21

Silicon-based nanostructures and their related composites have drawn tremendous research interest in solar energy storage and conversion. Mesoporous silicon with a huge surface area of 400-900 m2 g-1 developed by electrochemical etching exhibits excellent photocatalytic ability and stability after 10 cycles in degrading methyl orange under visible light irradiation, owing to its unique mesoporous network, abundant surface hydrides and efficient light harvesting. This work showcases the profound effects of surface area, crystallinity, pore topology on charge migration/recombination and mass transportation. Therein the ordered 1D channel array has outperformed the interconnected 3D porous network by greatly accelerating the mass diffusion and enhancing the accessibility of the active sites on the extensive surfaces. © 2016 The Royal Society of Chemistry.

Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

International Nuclear Information System (INIS)

Joo, Jinmyoung; Defforge, Thomas; Gautier, Gael; Loni, Armando; Kim, Dokyoung; Sailor, Michael J.; Li, Z. Y.; Canham, Leigh T.

2016-01-01

The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals ( 32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

Large volume cryogenic silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Braggio, C. [Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); Boscardin, M. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy); Bressi, G. [INFN sez. di Pavia, via Bassi 6, 27100 Pavia (Italy); Carugno, G.; Corti, D. [INFN sez. di Padova, via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [INFN lab. naz. Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Zorzi, N. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy)

2009-12-15

We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm{sup 3}, cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

Research Progress about the Relationship between Nanoparticles Silicon Dioxide and Lung Cancer

Directory of Open Access Journals (Sweden)

Chun DAI

2014-10-01

Full Text Available Nano-silicon dioxide widely distributed in plastic, rubber, ceramics, paint, adhesives, and many other fields, and it is the product of coal combustion. A growing evidence shows that nano-silicon dioxide has certain correlation with respiratory system disease. In this paper, we synthesized existing researches of domestic and abroad, summarized the lung toxicity of nanoparticles. This article are reviewed from the physical and chemical properties of nanoparticles silicon dioxide, exposure conditions and environment, and the pathogenic mechanism of nano-silicon dioxide.

Silicon solar cells: Past, present and the future

Science.gov (United States)

Lee, Youn-Jung; Kim, Byung-Sung; Ifitiquar, S. M.; Park, Cheolmin; Yi, Junsin

2014-08-01

There has been a great demand for renewable energy for the last few years. However, the solar cell industry is currently experiencing a temporary plateau due to a sluggish economy and an oversupply of low-quality cells. The current situation can be overcome by reducing the production cost and by improving the cell is conversion efficiency. New materials such as compound semiconductor thin films have been explored to reduce the fabrication cost, and structural changes have been explored to improve the cell's efficiency. Although a record efficiency of 24.7% is held by a PERL — structured silicon solar cell and 13.44% has been realized using a thin silicon film, the mass production of these cells is still too expensive. Crystalline and amorphous silicon — based solar cells have led the solar industry and have occupied more than half of the market so far. They will remain so in the future photovoltaic (PV) market by playing a pivotal role in the solar industry. In this paper, we discuss two primary approaches that may boost the silicon — based solar cell market; one is a high efficiency approach and the other is a low cost approach. We also discuss the future prospects of various solar cells.

Silicon solar cells: past, present and the future

Energy Technology Data Exchange (ETDEWEB)

Lee, Y. J.; Kim, B. S.; Ifitiquar, S. M.; Park, C. M.; Yi, J. S. [Sungkyunkwan University, Suwon (Korea, Republic of)

2014-08-15

There has been a great demand for renewable energy for the last few years. However, the solar cell industry is currently experiencing a temporary plateau due to a sluggish economy and an over supply of low-quality cells. The current situation can be overcome by reducing the production cost and by improving the cell is conversion efficiency. New materials such as compound semiconductor thin films have been explored to reduce the fabrication cost, and structural changes have been explored to improve the cell's efficiency. Although a record efficiency of 24.7% is held by a PERL - structured silicon solar cell and 13.44% has been realized using a thin silicon film, the mass production of these cells is still too expensive. Crystalline and amorphous silicon - based solar cells have led the solar industry and have occupied more than half of the market so far. They will remain so in the future photovoltaic (PV) market by playing a pivotal role in the solar industry. In this paper, we discuss two primary approaches that may boost the silicon - based solar cell market; one is a high efficiency approach and the other is a low cost approach. We also discuss the future prospects of various solar cells.

Activation Product Inverse Calculations with NDI

Energy Technology Data Exchange (ETDEWEB)

Gray, Mark Girard [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2017-09-27

NDI based forward calculations of activation product concentrations can be systematically used to infer structural element concentrations from measured activation product concentrations with an iterative algorithm. The algorithm converges exactly for the basic production-depletion chain with explicit activation product production and approximately, in the least-squares sense, for the full production-depletion chain with explicit activation product production and nosub production-depletion chain. The algorithm is suitable for automation.

Industrial Silicon Wafer Solar Cells

Directory of Open Access Journals (Sweden)

Dirk-Holger Neuhaus

2007-01-01

Full Text Available In 2006, around 86% of all wafer-based silicon solar cells were produced using screen printing to form the silver front and aluminium rear contacts and chemical vapour deposition to grow silicon nitride as the antireflection coating onto the front surface. This paper reviews this dominant solar cell technology looking into state-of-the-art equipment and corresponding processes for each process step. The main efficiency losses of this type of solar cell are analyzed to demonstrate the future efficiency potential of this technology. In research and development, more various advanced solar cell concepts have demonstrated higher efficiencies. The question which arises is “why are new solar cell concepts not transferred into industrial production more frequently?”. We look into the requirements a new solar cell technology has to fulfill to have an advantage over the current approach. Finally, we give an overview of high-efficiency concepts which have already been transferred into industrial production.

Silicon Conversion From Bamboo Leaf Silica By Magnesiothermic Reduction for Development of Li-ion Baterry Anode

Directory of Open Access Journals (Sweden)

Silviana Silviana

2018-01-01

Full Text Available Silicon (Si is a promising alternative material for the anode Lithium ion Battery (LIB. Si has a large theoretical capacity about 3579 mA hg-1, ten times greater than the commercial graphite anode (372 mA hg-1. Bamboo is a source of organic silica (bio-silica. Most part biogenetic content of SiO2 is obtained in bamboo leaves. This paper aims to investigate the synthesis nano Si from bamboo leaves through magnesiothermic reduction after silica extraction using sol–gel method and to observe nano Si of bamboo leaf as mixed material for lithium ion baterry. Silica and silicon content was determined using XRF. Silica product has 96,3 wt. % yield of extraction from bamboo leaf, while silicon yield was obtained 61.2 wt. %. The XRD pattern revealed that silica and silicon product were amourphous. The extracted silica and silicon from bambo leaf has spherical shape and agglomerated form. As anoda material for LIB, silicon product achieved 0,002 mAh capacity for 22 cycle.

Optical properties of phosphorescent nano-silicon electrochemically doped with terbium

Energy Technology Data Exchange (ETDEWEB)

Gelloz, Bernard [Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan); Mentek, Romain; Koshida, Nobuyoshi [Tokyo University A and T, 2-24-16 Nakacho, Koganei, Tokyo 184-8588 (Japan)

2012-12-15

Hybrid thin films consisting of oxidized nano-silicon doped with terbium have been fabricated. Nano-silicon was formed by electrochemical etching of silicon wafers. Terbium was incorporated into nano-silicon pores by electrochemical deposition. Different oxidizing thermal treatments were applied to the films. The samples treated by high-pressure water vapor annealing (HWA) exhibited strong blue emission with a phosphorescent component, as previously reported by our group. The low temperature (260 C) HWA also led to strong emission from Tb{sup 3+} ions, whereas typical high temperature (900 C) treatment generally used to activate Tb{sup 3+} ions in silicon-based materials led to less luminescent samples. Spectroscopic and dynamic analyses suggest that terbium was incorporated as a separate oxide phase in the pores of the porous nano-silicon. The PL of the terbium phase and nano-silicon phase exhibit different temperature and excitation power dependences suggesting little optical or electronic interaction between the two phases. The luminescence of terbium is better activated at low temperature (260 C) than at high temperature (900 C). The hybrid material may find some applications in photonics, for instance as a display material. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ion-beam doping of amorphous silicon with germanium isovalent impurity

International Nuclear Information System (INIS)

Khokhlov, A.F.; Mashin, A.I.; Ershov, A.V.; Mashin, N.I.; Ignat'eva, E.A.

1988-01-01

Experimental data on ion-beam doping of amorphous silicon containing minor germanium additions by donor and acceptor impurity are presented. Doping of a-Si:Ge films as well as of a-Si layers was performed by implantation of 40 keV energy B + ions or 120 keV energy phosphorus by doses from 3.2x10 13 up to 1.3x10 17 cm -2 . Ion current density did not exceed 1 μA/cm 2 . Radiation defect annealing was performed at 400 deg C temperature during 30 min. Temperature dependences of conductivity in the region of 160-500 K were studied. It is shown that a-Si:Ge is like hydrogenized amorphous silicon in relation to doping

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass.

Science.gov (United States)

Calnan, Sonya; Gabriel, Onno; Rothert, Inga; Werth, Matteo; Ring, Sven; Stannowski, Bernd; Schlatmann, Rutger

2015-09-02

In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

Influence of the radiation type on properties of silicon doped by erbium

International Nuclear Information System (INIS)

Nazyrov, D.E.

2006-01-01

Full text: It is known that on effectiveness of formation and kinetics of annealing of radiation damages presence causing, uncontrollable electrical of fissile or inactive impurities, the concentration and position in a lattice of the semiconductor strongly influence. From this point of view, the impurities of group of rare earths elements (REE) represent major interest, since interacting with primary radiation imperfections they create electrical passive complexes such as 'impurity + defect', thus raising radiation stability of silicon. The purpose of sectional operation was the investigations of influence such as radiation exposures: in γ-quanta 60 Co and high-velocity electrons with an energy 3,5 MeV on properties of silicon doped REE-erbium. The doping of silicon REE was carried out during cultivation. The concentration REE in silicon, on sectional of a neutron-activation analysis was equaled 10 14 10 18 cm -3 . As control is model the monocrystalline silicon such as KEP-15 50 was investigation. The experimental outcomes are obtained through methods DLTS, IRC, and also at examination of a Hall effect and conductance is model, measuring of concentration optically active of centers of oxygen and carbon. In samples irradiated in the γ-quanta 60 Co in an interval of doses 10 16 -5·10 18 cm -2 and high-velocity electrons from 5·10 13 up to 10 18 el.·cm -2 the formation various DL in a forbidden region is revealed, which parameters are well-known A- and, E-centres etc. Depending on a radiation dose in an energy distribution of radiation imperfections in Si of essential concentration modifications is not observed. The comparison doses of associations detected DL in irradiated n-Si with similar associations in control samples shows, that a velocity of introduction of radiation imperfections (A- and E-centres) and imperfection with a deep level Ec-0,32 eV) in samples containing REE much lower, than in control samples. The lifetime of non-equilibrium charge carriers

Application of plasma silicon nitride to crystalline thin-film silicon solar cells. Paper

Energy Technology Data Exchange (ETDEWEB)

Schmidt, J.; Oberbeck, L.; Rinke, T.J.; Berge, C.; Bergmann, R.B.

2002-07-01

We use plasma-enhanced chemical vapour deposition to deposit silicon nitride (SiN{sub x}) films at low temperature(400 C) onto the front surface of two different types of crystalline thin-film Si solar cells. The silicon nitride acts as an excellent antireflection coating on Si and provides a very high degree of electronic surface passivation over a wide range of compositions, including near-stoichiometric and Si-rich SiN{sub x}. Application of stoichiometric SiN{sub x} to non-textured thin-film cells, epitaxially grown at low temperature by ion-assisted deposition onto a monocrystalline Si substrate, results in an open-circuit voltage of 622 mV, a short-circuit current density of 26.6 mA/cm{sup 2} and an efficiency of 12.7%. It is shown that the SiN{sub x}-passivated in-situ grown n{sup +}-emitter of this cell type allows to reach open-circuit voltages of up to 667 mV. Silicon-rich SiN{sub x} is applied to the phosphorus-diffused n{sup +}-emitter of a textured thin-film cell on a glass superstrate fabricated by layer-transfer. The emitter saturation current density of these cells is only 40-64 fA/cm{sup 2}, which allows for open-circuit voltages of up to 699 mV. An impressively high open-circuit voltage of 638 mV and a short-circuit current density of 32.0 mA/cm{sup 2} are obtained for a 25 {mu}m thick SiN{sub x}-passivated, random pyramid-textured transfer cell. A transfer cell efficiency of 15.3% is independently confirmed.

Slim edges in double-sided silicon 3D detectors

International Nuclear Information System (INIS)

Povoli, M; Dalla Betta, G-F; Bagolini, A; Boscardin, M; Giacomini, G; Vianello, E; Zorzi, N

2012-01-01

Minimization of the insensitive edge area is one of the key requirements for silicon radiation detectors to be used in future silicon trackers. In 3D detectors this goal can be achieved with the active edge, at the expense of a high fabrication process complexity. In the framework of the ATLAS 3D sensor collaboration, we produced modified 3D silicon sensors with a double-sided technology. While this approach is not suitable to obtain active edges, because it does not use a support wafer, it allows for a new type of edge termination, the slim edge. In this paper we report on the development of the slim edge, from numerical simulations to design and testing, proving that it works effectively without increasing the fabrication complexity of silicon 3D detectors, and that it could be further optimized to reduce the insensitive edge region to less than 100 μm.

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Enhancement of photovoltaic properties of multicrystalline silicon solar cells by combination of buried metallic contacts and thin porous silicon

Energy Technology Data Exchange (ETDEWEB)

Ben Rabha, M.; Bessais, B. [Laboratoire de Photovoltaique, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia)

2010-03-15

Photovoltaic properties of buried metallic contacts (BMCs) with and without application of a front porous silicon (PS) layer on multicrystalline silicon (mc-Si) solar cells were investigated. A Chemical Vapor Etching (CVE) method was used to perform front PS layer and BMCs of mc-Si solar cells. Good electrical performance for the mc-Si solar cells was observed after combination of BMCs and thin PS films. As a result the current-voltage (I-V) characteristics and the internal quantum efficiency (IQE) were improved, and the effective minority carrier diffusion length (Ln) increases from 75 to 110 {mu}m after BMCs achievement. The reflectivity was reduced to 8% in the 450-950 nm wavelength range. This simple and low cost technology induces a 12% conversion efficiency (surface area = 3.2 cm{sup 2}). The obtained results indicate that the BMCs improve charge carrier collection while the PS layer passivates the front surface. (author)

Advanced silicon materials for photovoltaic applications

CERN Document Server

Pizzini, Sergio

2012-01-01

Today, the silicon feedstock for photovoltaic cells comes from processes which were originally developed for the microelectronic industry. It covers almost 90% of the photovoltaic market, with mass production volume at least one order of magnitude larger than those devoted to microelectronics. However, it is hard to imagine that this kind of feedstock (extremely pure but heavily penalized by its high energy cost) could remain the only source of silicon for a photovoltaic market which is in continuous expansion, and which has a cumulative growth rate in excess of 30% in the last few years. Ev

The LHCb Silicon Tracker - Control system specific tools and challenges

CERN Document Server

Adeva, G; Esperante Pereira, D; Gallas, A; Pazos Alvarez, A; Perez Trigo, E; Rodriguez Perez, P; Saborido, J; Amhis, Y; Bay, A; Blanc, F; Bressieux, J; Conti, G; Dupertuis, F; Fave, V; Frei, R; Gauvin, N; Haefeli, G; Keune, A; Luisier, J; Marki, R; Muresan, R; Nakada, T; Needham, M; Knecht, M; Schneider, O; Tran, M; Anderson, J; Buechler, A; Bursche, A; Chiapolini, N; De Cian, M; Elsasser, C; Salzmann, C; Saornil Gamarra, S; Steiner, S; Steinkamp, O; Straumann, U; van Tilburg, J; Tobin, M; Vollhardt, A; Aquines Gutierrez, O; Bauer, C; Britsch, M; Maciuc, F; Schmelling, M; Voss, H; Iakovenko, V; Okhrimenko, O; Pugatch, V

2014-01-01

The Experiment Control System (ECS) of the LHCb Silicon Tracker sub-detectors is built on the integrated LHCb ECS framework. Although all LHCb sub-detectors use the same framework and follow the same guidelines, the Silicon Tracker control system uses some interesting additional features in terms of operation and monitoring. The main details are described in this document. Since its design, the Silicon Tracker control system has been continuously evolving in a quite disorganized way. Some major maintenance activities are required to be able to keep improving. A description of those activities can also be found here.

2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits.

Science.gov (United States)

Wang, Ruijun; Sprengel, Stephan; Muneeb, Muhammad; Boehm, Gerhard; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

2015-10-05

The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.

Subnanomole detection and quantitation of high specific activity 32P-nucleotides

International Nuclear Information System (INIS)

Coniglio, C.; Pappas, G.; Gill, W.J.; Kashdan, M.; Maniscalco, M.

1991-01-01

Microbore liquid chromatography utilizes conventional HPLC and ultraviolet detection principles to determine subnanomole mass quantities of biologically significant molecules. This system takes advantage of specifically designed microflow equipment to analyze ultraviolet absorbing species at the picomole range. 32P-labeled nucleotides are examples of compounds routinely used at picomole quantities that are extremely difficult to accurately quantify using standard mass measurement techniques. The procedure described in this paper has the capability of measuring nucleotides down to 10 pmol using commercially available microbore ultraviolet detection equipment. The technique can be used to accurately measure the specific activity of as little as 10 microCi of an aqueous 32P-nucleotide solution

9 CFR 355.32 - Labeling required.

Science.gov (United States)

2010-01-01

... CERTIFICATION CERTIFIED PRODUCTS FOR DOGS, CATS, AND OTHER CARNIVORA; INSPECTION, CERTIFICATION, AND... 9 Animals and Animal Products 2 2010-01-01 2010-01-01 false Labeling required. 355.32 Section 355.32 Animals and Animal Products FOOD SAFETY AND INSPECTION SERVICE, DEPARTMENT OF AGRICULTURE AGENCY...

Development of processes for the production of low cost silicon dendritic web for solar cells

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Hopkins, R. H.; Skutch, M. E.; Driggers, J. M.; Hill, F. E.

1980-01-01

High area output rates and continuous, automated growth are two key technical requirements for the growth of low-cost silicon ribbons for solar cells. By means of computer-aided furnace design, silicon dendritic web output rates as high as 27 sq cm/min have been achieved, a value in excess of that projected to meet a $0.50 per peak watt solar array manufacturing cost. The feasibility of simultaneous web growth while the melt is replenished with pelletized silicon has also been demonstrated. This step is an important precursor to the development of an automated growth system. Solar cells made on the replenished material were just as efficient as devices fabricated on typical webs grown without replenishment. Moreover, web cells made on a less-refined, pelletized polycrystalline silicon synthesized by the Battelle process yielded efficiencies up to 13% (AM1).

Performance characterization of silicon pore optics

Science.gov (United States)

Collon, M. J.; Kraft, S.; Günther, R.; Maddox, E.; Beijersbergen, M.; Bavdaz, M.; Lumb, D.; Wallace, K.; Krumrey, M.; Cibik, L.; Freyberg, M.

2006-06-01

The characteristics of the latest generation of assembled silicon pore X-ray optics are discussed in this paper. These very light, stiff and modular high performance pore optics (HPO) have been developed [1] for the next generation of astronomical X-ray telescopes, which require large collecting areas whilst achieving angular resolutions better than 5 arcseconds. The suitability of 12 inch silicon wafers as high quality optical mirrors and the automated assembly process are discussed elsewhere in this conference. HPOs with several tens of ribbed silicon plates are assembled by bending the plates into an accurate cylindrical shape and directly bonding them on top of each other. The achievable figure accuracy is measured during assembly and in test campaigns at X-ray testing facilities like BESSY-II and PANTER. Pencil beam measurements allow gaining information on the quality achieved by the production process with high spatial resolution. In combination with full beam illumination a complete picture of the excellent performance of these optics can be derived. Experimental results are presented and discussed in detail. The results of such campaigns are used to further improve the production process in order to match the challenging XEUS requirements [2] for imaging resolution and mass.

Recent developments in low cost silicon solar cells for terrestrial applications. [sheet production methods

Science.gov (United States)

Leipold, M. H.

1978-01-01

A variety of techniques may be used for photovoltaic energy systems. Concentrated or not concentrated sunlight may be employed, and a number of materials can be used, including silicon, gallium arsenide, cadmium sulfide, and cadmium telluride. Most of the experience, however, has been obtained with silicon cells employed without sunlight concentration. An industrial base exists at present for producing solar cells at a price in the range from $15 to $30 per peak watt. A major federal program has the objective to reduce the price of power provided by silicon solar systems to approximately $1 per peak watt in the early 1980's and $0.50 per watt by 1986. The approaches considered for achieving this objective are discussed.

Synthesis of silane and silicon in a non-equilibrium plasma jet

Science.gov (United States)

Calcote, H. F.; Felder, W.

1977-01-01

The feasibility of using a non-equilibrium hydrogen plasma jet as a chemical synthesis tool was investigated. Four possible processes were identified for further study: (1) production of polycrystalline silicon photovoltaic surfaces, (2) production of SiHCl3 from SiCl4, (3) production of SiH4 from SiHCl3, and (4) purification of SiCl4 by metal impurity nucleation. The most striking result was the recognition that the strongly adhering silicon films, amorphous or polycrystalline, produced in our studies could be the basis for preparing a photovoltaic surface directly; this process has potential advantages over other vapor deposition processes.

Technology for the large-scale production of multi-crystalline silicon solar cells and modules

International Nuclear Information System (INIS)

Weeber, A.W.; De Moor, H.H.C.

1997-06-01

In cooperation with Shell Solar Energy (formerly R and S Renewable Energy Systems) and the Research Institute for Materials of the Catholic University Nijmegen the Netherlands Energy Research Foundation (ECN) plans to develop a competitive technology for the large-scale manufacturing of solar cells and solar modules on the basis of multi-crystalline silicon. The project will be carried out within the framework of the Economy, Ecology and Technology (EET) program of the Dutch ministry of Economic Affairs and the Dutch ministry of Education, Culture and Sciences. The aim of the EET-project is to reduce the costs of a solar module by 50% by means of increasing the conversion efficiency as well as the development of cheap processes for large-scale production

Method for the preparation of n-i-p type radiation detector from silicon

International Nuclear Information System (INIS)

Keleti, J.; Toeroek, T.; Lukacs, J.; Molnar, I.

1978-01-01

The patent describes a procedure for the preparation of n-i-p type silicon radiation detectors. The aim was to provide an adaquate procedure for the production of α, β, γ-detectors from silicon available on the market, either p-type single crystal silicon characterised by its boron level. The procedure and the 9 claims are illustrated by two examples. (Sz.J.)