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Sample records for active fabry-perot semiconductor

  1. General Method for Calculating the Response and Noise Spectra of Active Fabry-Perot Semiconductor Waveguides With External Optical Injection

    DEFF Research Database (Denmark)

    Blaaberg, Søren; Mørk, Jesper

    2009-01-01

    We present a theoretical method for calculating small-signal modulation responses and noise spectra of active Fabry-Perot semiconductor waveguides with external light injection. Small-signal responses due to either a modulation of the pump current or due to an optical amplitude or phase modulatio...... amplifiers and an injection-locked laser. We also demonstrate the applicability of the method to analyze slow and fast light effects in semiconductor waveguides. Finite reflectivities of the facets are found to influence the phase changes of the injected microwave-modulated light....

  2. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser

    International Nuclear Information System (INIS)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N.

    2000-01-01

    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  3. Faraday-Active Fabry-Perot Resonator: Transmission, Reflection, and Emissivity

    Science.gov (United States)

    Liptuga, Anatoliy; Morozhenko, Vasyl; Pipa, Viktor; Venger, Evgen; Kostiuk, Theodor

    2011-01-01

    The propagation of light within a semiconductor Faraday-active Fabry-Perot resonator (FAFR) is investigated theoretically and experimentally. It is shown that an external magnetic field radically changes the angular and spectral characteristics of transmission, reflection and emissivity of the resonator not only for polarized, but also for unpolarized light. Suppression of interference patterns and phase inversion of the interference extrema were observed in both monochromatic and polychromatic light. The investigations were carried out for the plane-parallel plates of n-InAs in the spectral range of free charge carrier absorption. The results can be used to create new controllable optical and spectroscopic devices for investigation of Faraday-active material properties and for control of parameters of plane-parallel layers and structures.

  4. All-fiber, long-active-length Fabry-Perot strain sensor.

    Science.gov (United States)

    Pevec, Simon; Donlagic, Denis

    2011-08-01

    This paper presents a high-sensitivity, all-silica, all-fiber Fabry-Perot strain-sensor. The proposed sensor provides a long active length, arbitrary length of Fabry-Perot cavity, and low intrinsic temperature sensitivity. The sensor was micro-machined from purposely-developed sensor-forming fiber that is etched and directly spliced to the lead-in fiber. This manufacturing process has good potential for cost-effective, high-volume production. Its measurement range of over 3000 µε, and strain-resolution better than 1 µε were demonstrated by the application of a commercial, multimode fiber-based signal processor.

  5. Construction of an optical semiconductor amplifier starting from a Fabry-Perot semiconductor laser; Construccion de un amplificador optico de semiconductor a partir de un laser de semiconductor Fabry-Perot

    Energy Technology Data Exchange (ETDEWEB)

    Garcia, E.; Soto, H.; Marquez, H.; Valles V, N. [Departamento de Electronica y Telecomunicaciones, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada. Km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, Baja California (Mexico)

    2000-07-01

    A methodology to convert a semiconductor laser Fabry-Perot (SL-FP) in a semiconductor optical amplifier (SOA) is presented. In order to suppress the cavity resonant an optical thin film coating was deposited on the facets of the SL-FP. The experiment was carried out putting on service a new monitoring technique that consist in the observation of the laser power spectrum during the antireflection coatings deposition. This allows to determine the moment were the facets reflectivity is minimum. The SOA obtained was characterized for different polarization currents. (Author)

  6. All-optical logic gates and wavelength conversion via the injection locking of a Fabry-Perot semiconductor laser

    Science.gov (United States)

    Harvey, E.; Pochet, M.; Schmidt, J.; Locke, T.; Naderi, N.; Usechak, N. G.

    2013-03-01

    This work investigates the implementation of all-optical logic gates based on optical injection locking (OIL). All-optical inverting, NOR, and NAND gates are experimentally demonstrated using two distributed feedback (DFB) lasers, a multi-mode Fabry-Perot laser diode, and an optical band-pass filter. The DFB lasers are externally modulated to represent logic inputs into the cavity of the multi-mode Fabry-Perot slave laser. The input DFB (master) lasers' wavelengths are aligned with the longitudinal modes of the Fabry-Perot slave laser and their optical power is used to modulate the injection conditions in the Fabry-Perot slave laser. The optical band-pass filter is used to select a Fabry- Perot mode that is either suppressed or transmitted given the logic state of the injecting master laser signals. When the input signal(s) is (are) in the on state, injection locking, and thus the suppression of the non-injected Fabry-Perot modes, is induced, yielding a dynamic system that can be used to implement photonic logic functions. Additionally, all-optical photonic processing is achieved using the cavity-mode shift produced in the injected slave laser under external optical injection. The inverting logic case can also be used as a wavelength converter — a key component in advanced wavelength-division multiplexing networks. As a result of this experimental investigation, a more comprehensive understanding of the locking parameters involved in injecting multiple lasers into a multi-mode cavity and the logic transition time is achieved. The performance of optical logic computations and wavelength conversion has the potential for ultrafast operation, limited primarily by the photon decay rate in the slave laser.

  7. High-accuracy vibration sensor based on a Fabry-Perot interferometer with active phase-tracking technology.

    Science.gov (United States)

    Xia, Wei; Li, Chuncheng; Hao, Hui; Wang, Yiping; Ni, Xiaoqi; Guo, Dongmei; Wang, Ming

    2018-02-01

    A novel position-sensitive Fabry-Perot interferometer was constructed with direct phase modulation by a built-in electro-optic modulator. Pure sinusoidal phase modulation of the light was produced, and the first harmonic of the interference signal was extracted to dynamically maintain the interferometer phase to the most sensitive point of the interferogram. Therefore, the minute vibration of the object was coded on the variation of the interference signal and could be directly retrieved by the output voltage of a photodetector. The operating principle and the signal processing method for active feedback control of the interference phase have been demonstrated in detail. The developed vibration sensor was calibrated through a high-precision piezo-electric transducer and tested by a nano-positioning stage under a vibration magnitude of 60 nm and a frequency of 300 Hz. The active phase-tracking method of the system provides high immunity against environmental disturbances. Experimental results show that the proposed interferometer can effectively reconstruct tiny vibration waveforms with subnanometer resolution, paving the way for high-accuracy vibration sensing, especially for micro-electro-mechanical systems/nano-electro-mechanical systems and ultrasonic devices.

  8. Fabry-Perot-like interference security image structures: From passive to active

    International Nuclear Information System (INIS)

    Baloukas, B.; Trottier-Lapointe, W.; Martinu, L.

    2014-01-01

    Counterfeiting of products and important documents is at an all-time high and is costing the world economy hundreds of billions of dollars yearly as well as posing significant safety and health hazards through the production of uncertified goods, e.g., pharmaceutical products. To limit these effects, interference-based optical security devices offering an angular color shift are still widely in use. Unfortunately, commercial iridescent materials are now readily available and represent a potential source of counterfeiting. In this short review, we first describe the basic principles behind passive interference security image structures (ISIS) and the qualities which have resulted in their integration into most important documents. Various features which have been added to ISIS in order to make them harder to duplicate yet simpler to authenticate are also presented (metamerism, magnetic materials, diffraction, etc.). We then address the implementation of active materials, mainly electrochromic WO 3 as a means of generating two-level authentication devices. Finally, we discuss some general considerations to keep in mind when developing features for security applications. - Highlights: • We review Fabry–Perot-like metal-dielectric filters used in optical security. • We discuss/demonstrate recent additions: metamerism, magnetism and diffraction. • We demonstrate a feature based on the use of thin metallic mirrors. • We cover recent developments in the use of active materials. • We demonstrate an electrochromic feature with two levels of authentication

  9. Fabry-Perot-like interference security image structures: From passive to active

    Energy Technology Data Exchange (ETDEWEB)

    Baloukas, B., E-mail: bill.baloukas@polymtl.ca; Trottier-Lapointe, W.; Martinu, L., E-mail: ludvik.martinu@polymtl.ca

    2014-05-30

    Counterfeiting of products and important documents is at an all-time high and is costing the world economy hundreds of billions of dollars yearly as well as posing significant safety and health hazards through the production of uncertified goods, e.g., pharmaceutical products. To limit these effects, interference-based optical security devices offering an angular color shift are still widely in use. Unfortunately, commercial iridescent materials are now readily available and represent a potential source of counterfeiting. In this short review, we first describe the basic principles behind passive interference security image structures (ISIS) and the qualities which have resulted in their integration into most important documents. Various features which have been added to ISIS in order to make them harder to duplicate yet simpler to authenticate are also presented (metamerism, magnetic materials, diffraction, etc.). We then address the implementation of active materials, mainly electrochromic WO{sub 3} as a means of generating two-level authentication devices. Finally, we discuss some general considerations to keep in mind when developing features for security applications. - Highlights: • We review Fabry–Perot-like metal-dielectric filters used in optical security. • We discuss/demonstrate recent additions: metamerism, magnetism and diffraction. • We demonstrate a feature based on the use of thin metallic mirrors. • We cover recent developments in the use of active materials. • We demonstrate an electrochromic feature with two levels of authentication.

  10. Stable CW Single Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

    Science.gov (United States)

    Duerksen, Gary L.; Krainak, Michael A.

    1999-01-01

    Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by tWo methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback'. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback.

  11. Use of PZT's for adaptive control of Fabry-Perot etalon plate figure

    Science.gov (United States)

    Skinner, WIlbert; Niciejewski, R.

    2005-01-01

    A Fabry Perot etalon, consisting of two spaced and reflective glass flats, provides the mechanism by which high resolution spectroscopy may be performed over narrow spectral regions. Space based applications include direct measurements of Doppler shifts of airglow absorption and emission features and the Doppler broadening of spectral lines. The technique requires a high degree of parallelism between the two flats to be maintained through harsh launch conditions. Monitoring and adjusting the plate figure by illuminating the Fabry Perot interferometer with a suitable monochromatic source may be performed on orbit to actively control of the parallelism of the flats. This report describes the use of such a technique in a laboratory environment applied to a piezo-electric stack attached to the center of a Fabry Perot etalon.

  12. Extrinsic Fabry-Perot ultrasonic detector

    Science.gov (United States)

    Kidwell, J. J.; Berthold, John W., III

    1996-10-01

    We characterized the performance of a commercial fiber optic extrinsic Fabry-Perot interferometer for use as an ultrasonic sensor, and compared the performance with a standard lead zirconate titanate (PZT) detector. The interferometer was unstabilized. The results showed that the fiber sensor was about 12 times less sensitive than the PZT detector. Ultrasonic frequency response near 100 kHz was demonstrated. We describe the design of the fiber sensor, the details of the tests performed, and potential applications.

  13. An Archetype Semi-Ring Fabry-Perot (SRFP) Resonator

    Science.gov (United States)

    Taghavi-Larigani, Shervin; VanZyl, Jakob

    2009-01-01

    We introduce and demonstrate the generation of a novel resonator, termed Semi-Ring Fabry-Perot (SRFP), that exhibits unique features, such as, its use of one plane mirror, allowing the SRFP to be easily fabricated as a symmetrical device. In addition to its unique features, it exhibits advantages of ring and Fabry-Perot resonators: 1) compared to a ring resonator that only allows a transmitted intensity, the Semi-Ring Fabry-Perot (SRFP) supports standing waves, allowing both a reflected and transmitted intensity; 2) the reflected light spectrum of the SRFP resonator is much narrower than similar Fabry-Perot, implying higher finesse.

  14. Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

    Science.gov (United States)

    Duerksen, Gary L.; Krainak, Michael A.

    1999-01-01

    Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by two methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback. We coupled a nominal 935 run-wavelength Fabry-Perot laser diode to an ultra narrow band (18 pm) FBG. When tuned by varying its temperature, the laser wavelength is pulled toward the centerline of the Bragg grating, and the spectrum of the laser output is seen to fall into three discrete stability regimes as measured by the side-mode suppression ratio.

  15. Influence of laser frequency noise on scanning Fabry-Perot interferometer based laser Doppler velocimetry

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian

    2014-01-01

    n this work, we study the performance of a scanning Fabry-Perot interferometer based laser Doppler velocimeter (sFPILDV) and compare two candidate 1.5 um single-frequency laser sources for the system – a fiber laser (FL) and a semiconductor laser (SL). We describe a straightforward calibration...... procedure for the sFPI-LDV and investigate the effect of different degrees of laser frequency noise between the FL and the SL on the velocimeter’s performance...

  16. Fabry-Perot observations of Comet Halley H2O(+)

    International Nuclear Information System (INIS)

    Scherb, F.; Roesler, F.L.D.; Harlander, J.; Magee-sauer, K.

    1990-01-01

    Fabry-Perot scanning spectrometer observations of Comet Halley's H 2 O(+) emissions have yielded 6158.64 and 6158.85 A spin doublet data at distances in the range of 0 to 2 million km from the comet heat in the antisunward direction. Cometary plasma outflow velocities were ascertained on the basis of the emissions' Doppler shifts, yielding results that were mostly but not exclusively consistent with the plasma's constant antisunward acceleration; the acceleration varied from night to night of observations over a 30-300 cm/sec range. The unusual plasma kinematics of December 14-15, 1985, and January 10, 1986, may be associated with the tail-disconnection activity observed by others. 30 refs

  17. Feedback stabilized tandem Fabry-Perot interferometer

    International Nuclear Information System (INIS)

    Fukushima, Hiroyuki; Ito, Mikio; Shirasu, Hiroshi.

    1986-01-01

    A new system for measuring the isotopic ratio of uranium, in which two plane-type Fabry-Perot interferometers (tandem FP) are connected in series. The parallelism between the two FPs is achieved automatically by a feedback control mechanism based on laser interference fringe monitoring. The structure of the tandem FP, feedback control system, automatic parallelism adjustment mechanism and wavelength synchronization mechanism are described in detail. For experiments, a hollow cathode discharge tube of a pulse discharge type is employed. Measurements are made to determine the effects of pulse width on the 238 U peak height of 502.7 nm line, recorder traces of 235 U and 238 U lines, half width for 238 U component of the 502.7 nm line, SN ratio, reproducibility of the 235 U/ 238 U peak height ratio and 235 U/ 238 U intensity ratio. Considerations are made on the spectral line width, contrast, transmission factor, and stability of automatic parallelism control and wavelength synchronization. Results obtained indicates that a single-type interferometer would serve adequately for measuring the 235 U/ 238 U ratio if the automatic parallelism control developed here is used. The ultimate object of the tandem system is to make measurement of 236 U. Satisfactory results have not obtained as yet, but most likely the present system would make it possible if a light source of a higher intensity and advanced photometric techniques are developed. (Nogami, K.)

  18. On-chip optical filter comprising Fabri-Perot resonator structure and spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Han, Seunghoon; Horie, Yu; Faraon, Andrei; Arbabi, Amir

    2018-04-10

    An on-chip optical filter having Fabri-Perot resonators and a spectrometer may include a first sub-wavelength grating (SWG) reflecting layer and a second SWG reflecting layer facing each other. A plurality of Fabri-Perot resonators are formed by the first SWG reflecting layer and the second SWG reflecting layer facing each other. Each of the Fabri-Perot resonators may transmit light corresponding to a resonance wavelength of the Fabri-Perot resonator. The resonance wavelengths of the Fabri-Perot resonators may be determined according to duty cycles of grating patterns.

  19. TAURUS - a wide field imaging Fabry-Perot spectrometer

    International Nuclear Information System (INIS)

    Atherton, P.D.; Taylor, K.

    1983-01-01

    TAURUS, an imaging Fabry-Perot system developed by the Royal Greenwich Observatory and Imperial College London, is described. The imaging process is explained and the technique is compared with grating spectrographs. It is argued that TAURUS is superior for obtaining field information from extended emission line sources. (Auth.)

  20. Levitated optomechanics with a fiber Fabry-Perot interferometer

    Science.gov (United States)

    Pontin, A.; Mourounas, L. S.; Geraci, A. A.; Barker, P. F.

    2018-02-01

    In recent years, quantum phenomena have been experimentally demonstrated on variety of optomechanical systems ranging from micro-oscillators to photonic crystals. Since single photon couplings are quite small, most experimental approaches rely on the realization of high finesse Fabry-Perot cavities in order to enhance the effective coupling. Here we show that by exploiting a, long path, low finesse fiber Fabry-Perot interferometer ground state cooling can be achieved. We model a 100 m long cavity with a finesse of 10 and analyze the impact of additional noise sources arising from the fiber. As a mechanical oscillator we consider a levitated microdisk but the same approach could be applied to other optomechanical systems.

  1. Self-generation of optical frequency comb in single section quantum dot Fabry-Perot lasers: a theoretical study.

    Science.gov (United States)

    Bardella, Paolo; Columbo, Lorenzo Luigi; Gioannini, Mariangela

    2017-10-16

    Optical Frequency Comb (OFC) generated by semiconductor lasers are currently widely used in the extremely timely field of high capacity optical interconnects and high precision spectroscopy. In the last decade, several experimental evidences of spontaneous OFC generation have been reported in single section Quantum Dot (QD) lasers. Here we provide a physical understanding of these self-organization phenomena by simulating the multi-mode dynamics of a single section Fabry-Perot (FP) QD laser using a Time-Domain Traveling-Wave (TDTW) model that properly accounts for coherent radiation-matter interaction in the semiconductor active medium and includes the carrier grating generated by the optical standing wave pattern in the laser cavity. We show that the latter is the fundamental physical effect at the origin of the multi-mode spectrum appearing just above threshold. A self-mode-locking regime associated with the emission of OFC is achieved for higher bias currents and ascribed to nonlinear phase sensitive effects as Four Wave Mixing (FWM). Our results explain in detail the behaviour observed experimentally by different research groups and in different QD and Quantum Dash (QDash) devices.

  2. A Fabry-Perot interferometer system for high-speed velocity measurement

    NARCIS (Netherlands)

    Cheng, L.K.; Bruinsma, A.J.A.; Prinse, W.C.; Smorenburg, C.

    1997-01-01

    The Fabry-Perot Velocity Interferometer System (F-PVIS) is designed and built for measuring the Doppler shift of light by recording positional changes in the interferometric pattern behind the Fabry-Perot interferometer. The velocity of a surface can be deduced from the Doppler shift which is caused

  3. Fabry-Perot confocal resonator optical associative memory

    Science.gov (United States)

    Burns, Thomas J.; Rogers, Steven K.; Vogel, George A.

    1993-03-01

    A unique optical associative memory architecture is presented that combines the optical processing environment of a Fabry-Perot confocal resonator with the dynamic storage and recall properties of volume holograms. The confocal resonator reduces the size and complexity of previous associative memory architectures by folding a large number of discrete optical components into an integrated, compact optical processing environment. Experimental results demonstrate the system is capable of recalling a complete object from memory when presented with partial information about the object. A Fourier optics model of the system's operation shows it implements a spatially continuous version of a discrete, binary Hopfield neural network associative memory.

  4. Fabry-Perot Diaphragm Fiber Optic Sensor (DFOS for Acoustic Detection

    Directory of Open Access Journals (Sweden)

    Yan SUN

    2007-10-01

    Full Text Available A diaphragm fiber optic sensor (DFOS solely based on Fabry-Perot multiple beam interference has been designed and fabricated with micro-electric mechanical system (MEMS technology. The silicon diaphragm with an embossed center was designed with an interference gap width kept accurately. The DFOS was verified to be a truly and purely Fabry-Perot device via a critical test. Parallel testing with a Piezoelectric (PZT sensor showed that the DFOS had high sensitivity. The Fabry-Perot DFOS also demonstrated excellent performance in on-line monitoring of Partial Discharge (PD in power transformers.

  5. Transversely coupled Fabry-Perot resonators with Bragg grating reflectors.

    Science.gov (United States)

    Saber, Md Ghulam; Wang, Yun; El-Fiky, Eslam; Patel, David; Shahriar, Kh Arif; Alam, Md Samiul; Jacques, Maxime; Xing, Zhenping; Xu, Luhua; Abadía, Nicolás; Plant, David V

    2018-01-01

    We design and demonstrate Fabry-Perot resonators with transverse coupling using Bragg gratings as reflectors on the silicon-on-insulator (SOI) platform. The effects of tailoring the cavity length and the coupling coefficient of the directional coupler on the spectral characteristics of the device are studied. The fabricated resonators achieved an extinction ratio (ER) of 37.28 dB and a Q-factor of 3356 with an effective cavity length of 110 μm, and an ER of 8.69 dB and a Q-factor of 23642 with a 943 μm effective cavity length. The resonator structure presented here has the highest reported ER on SOI and provides additional degrees of freedom compared to an all-pass ring resonator to tune the spectral characteristics.

  6. Fabry-Perot enhanced Faraday rotation in graphene.

    Science.gov (United States)

    Ubrig, Nicolas; Crassee, Iris; Levallois, Julien; Nedoliuk, Ievgeniia O; Fromm, Felix; Kaiser, Michl; Seyller, Thomas; Kuzmenko, Alexey B

    2013-10-21

    We demonstrate that giant Faraday rotation in graphene in the terahertz range due to the cyclotron resonance is further increased by constructive Fabry-Perot interference in the supporting substrate. Simultaneously, an enhanced total transmission is achieved, making this effect doubly advantageous for graphene-based magneto-optical applications. As an example, we present far-infrared spectra of epitaxial multilayer graphene grown on the C-face of 6H-SiC, where the interference fringes are spectrally resolved and a Faraday rotation up to 0.15 radians (9°) is attained. Further, we discuss and compare other ways to increase the Faraday rotation using the principle of an optical cavity.

  7. Micromachined fiber optic Fabry-Perot underwater acoustic probe

    Science.gov (United States)

    Wang, Fuyin; Shao, Zhengzheng; Hu, Zhengliang; Luo, Hong; Xie, Jiehui; Hu, Yongming

    2014-08-01

    One of the most important branches in the development trend of the traditional fiber optic physical sensor is the miniaturization of sensor structure. Miniature fiber optic sensor can realize point measurement, and then to develop sensor networks to achieve quasi-distributed or distributed sensing as well as line measurement to area monitoring, which will greatly extend the application area of fiber optic sensors. The development of MEMS technology brings a light path to address the problems brought by the procedure of sensor miniaturization. Sensors manufactured by MEMS technology possess the advantages of small volume, light weight, easy fabricated and low cost. In this paper, a fiber optic extrinsic Fabry-Perot interferometric underwater acoustic probe utilizing micromachined diaphragm collaborated with fiber optic technology and MEMS technology has been designed and implemented to actualize underwater acoustic sensing. Diaphragm with central embossment, where the embossment is used to anti-hydrostatic pressure which would largely deflect the diaphragm that induce interferometric fringe fading, has been made by double-sided etching of silicon on insulator. By bonding the acoustic-sensitive diaphragm as well as a cleaved fiber end in ferrule with an outer sleeve, an extrinsic Fabry-Perot interferometer has been constructed. The sensor has been interrogated by quadrature-point control method and tested in field-stable acoustic standing wave tube. Results have been shown that the recovered signal detected by the sensor coincided well with the corresponding transmitted signal and the sensitivity response was flat in frequency range from 10 Hz to 2kHz with the value about -154.6 dB re. 1/μPa. It has been manifest that the designed sensor could be used as an underwater acoustic probe.

  8. Calibration of Fabry-Perot interferometers for electron cyclotron emission measurements on the Tore Supra tokamak

    International Nuclear Information System (INIS)

    Javon, C.; Talvard, M.

    1990-01-01

    The electron temperature is routinely measured on TORE SUPRA using Fabry-Perot cavities. These have been calibrated using a technique involving coherent addition and Fourier analysis of a chopped black-body source. Comparison with conventional techniques is reported

  9. Fabry-Perot observations of [FeX] in the Cygnus Loop and IC443

    International Nuclear Information System (INIS)

    Ballet, J.; Rothenflug, R.; Soutoul, A.; Caplan, J.

    1988-01-01

    The authors present the first results of an observational program of SNRs in the coronal lines of [FeX] and [FeXIV] using Fabry--Perot spectrophotometer. These support previously published brightnesses

  10. Fabry-Perot measurements of barium temperature in fluorescent lamps

    International Nuclear Information System (INIS)

    Hadrath, S; Garner, R

    2010-01-01

    A scanning Fabry-Perot interferometer (FPI) is used to determine the temperature of barium atoms that are liberated from the electrodes of fluorescent lamps during their steady-state operation. Barium, a constituent of the work function lowering emitter material that is placed on the tungsten coil that forms the electrode, is liberated primarily by evaporation from the hot (∼1300 K) thermionic electrode. However, there may be situations or modes of operation in which barium is, in addition, sputtered, a condition which may lead to increased end-darkening, shortened life and increased mercury consumption in the lamp. Using the FPI diagnostic, the occurrence of sputtering is inferred when barium temperatures are much greater than the electrode temperature. The FPI diagnostic senses resonance radiation (λ = 553 nm) emitted by barium atoms excited in the low pressure discharge environment, and infers temperature from the Doppler broadened linewidth. The diagnostic has proven to be successful in a number of situations. Measurements have been made on rare gas discharges and on Hg-argon discharges for different discharge currents, gas pressures and auxiliary coil currents. Measurements are phase resolved for ac-driven discharges.

  11. Neutral wind measurements by Fabry-Perot interferometry in Antarctica

    International Nuclear Information System (INIS)

    Stewart, K.D.; Dudeney, J.R.; Rodger, A.S.; Smith, R.W.; Rees, D.

    1986-01-01

    A large-aperture (150 mm), spatially scanned Fabry-Perot Interferometer (FPI) has been deployed at Halley (75.5 o S, 26.8 o W; L=4.2), Antarctica. Thermospheric neutral wind measurements were made by finding the Doppler shift of the OI( 3 P 2 - 1 D 2 ) 630.0 nm emission. This has allowed the first comparison to be made between southern hemisphere ground-based thermospheric wind measurements and the predictions of a three-dimensional, time-dependent thermospheric global circulation model. Geomagnetic and geographic latitude are well separated at Halley, so we may expect a distinct contrast to the dynamic behaviour observed in the more frequently studied northern polar thermosphere. Although the initial results from the experiment are in general agreement with the model, some consistent and significant differences between the observed wind field and that predicted are evident in the morning sector. These may be related to uncertainties in mapping magnetospheric boundaries to ionospheric heights in the southern hemisphere. The intensity of the 630 nm emission has been examined with respect to the maximum plasma frequency of the Es layer using data from the Advanced Ionospheric Sounder at Halley

  12. Study on the structure of bridge surface of the micro Fabry-Perot cavity tunable filter

    International Nuclear Information System (INIS)

    Meng Qinghua; Luo Huan; Bao Shiwei; Zhou Yifan; Chen Sihai

    2011-01-01

    Micro Fabry-Perot cavity tunable filters are widely applied in the area of Pushbroom Hyperspectral imaging, DWDM optical communication system and self-adaptive optics. With small volume, lower consumption and cost, the Micro Fabry-Perot cavity tunable filter can realize superior response speed, large spectral range, high definition and high reliability. By deposition metal membrane on silicon chip by MEMS technology, the micro Fabry-Perot cavity has been achieved, which is actuated by electrostatic force and can realize the function of an optical filter. In this paper, the micro-bridge structure of the micro Fabry-Perot cavity tunable filter has been studied. Finite element analysis software COMSOL Multiphysics has been adopted to design the structure of the micro-bridge of the micro filter. In order to simulate the working mechanism of the micro Fabry-Perot cavity and study the electrical and mechanical characteristics of the micro tunable filter,the static and dynamic characteriastics are analyzed, such as stress, displacement, transient response, etc. The corresponding parameters of the structure are considered as well by optimizition the filter's sustain structure.

  13. Fiber Fabry-Perot interferometer with controllable temperature sensitivity.

    Science.gov (United States)

    Zhang, Xinpu; Peng, Wei; Zhang, Yang

    2015-12-01

    We proposed a fiber taper based on the Fabry-Perot (FP) interferometer structure with controllable temperature sensitivity. The FP interferometer is formed by inserting a segment of tapered fiber tip into the capillary and subsequently splicing the other end of the capillary to a single-mode fiber (SMF), the tapered fiber endface, and the spliced face form the FP cavity. Through controlling the inserted tapered fiber length, a series of FP interferometers were made. Because the inserted taper tip has the degree of freedom along the fiber axial, when the FP interferometer is subjected to temperature variation, the thermal expansion of the fiber taper tip will resist the FP cavity length change caused by the evolution of capillary length, and we can control the temperature sensitivity by adjusting the inserted taper length. In this structure, the equivalent thermal expansion coefficient of the FP interferometer can be defined; it was used to evaluate the temperature sensitivity of the FP interferometer, which provides an effective method to eliminate the temperature effect and to enhance other measurement accuracy. We fabricated the FP interferometers and calibrated their temperature characters by measuring the wavelength shift of the resonance dips in the reflection spectrum. In a temperature range of 50°C to 150°C, the corresponding temperature sensitivities can be controlled between 0 and 1.97 pm/°C when the inserted taper is between 75 and 160 μm. Because of its controllable temperature sensitivity, ease of fabrication, and low cost, this FP interferometer can meet different temperature sensitivity requirements in various application areas, especially in the fields which need temperature insensitivity.

  14. A Fabry-Perot interferometer for hard X-rays

    International Nuclear Information System (INIS)

    Caticha, A.; Caticha-Ellis, S.

    1990-01-01

    Reflection and transmission coefficients are calculated of a sequence of N thin parallel crystals diffracting close to normal incidence and separated by thin non-diffracting gaps. From the study of the particular case N=2 a new Fabry-Perot interferometer (FPI) is proposed for hard X-rays (wavelengths of the order of Angstroms). It is found that the FPI plates do not need to be carved from a single perfect crystal block but may be grown or cleaved by other methods. This interesting possibility is suggested by two facts. First, it is known that for incidence close to normal various features of dynamical diffraction are much less sensitive to crystal defects and crystal orientation. Second, the existence of a mismatch between the lattices of the two FPI plates may affect but does not qualitatively alter the performance of the FPI. It is shown that the optimal thickness of the plates is of the order of a few microns or less. The plates may be built from a wide variety of materials. The transmission of X-rays is studied as a function of the energy and direction of the incident photons for various values of the plate thickness, of the gap, of the lattice mismatch, and also for different materials in the gap. The transmission profile exhibits a peak which is spectrally very sharp (about 10 -3 eV for low order reflections and even less for higher ones) and which can be easily tuned by changing either the lattice mismatch or the temperature. FPI plates built of materials with low absorption such as graphite seem to be particularly convenient. Several possible applications are suggested. (author)

  15. Effective length of short Fabry-Perot cavity formed by uniform fiber Bragg gratings.

    Science.gov (United States)

    Barmenkov, Yuri O; Zalvidea, Dobryna; Torres-Peiró, Salvador; Cruz, Jose L; Andrés, Miguel V

    2006-07-10

    In this paper, we describe the properties of Fabry-Perot fiber cavity formed by two fiber Bragg gratings in terms of the grating effective length. We show that the grating effective length is determined by the group delay of the grating, which depends on its diffraction efficiency and physical length. We present a simple analytical formula for calculation of the effective length of the uniform fiber Bragg grating and the frequency separation between consecutive resonances of a Fabry-Perot cavity. Experimental results on the cavity transmission spectra for different values of the gratings' reflectivity support the presented theory.

  16. Extrinsic fiber-optic Fabry-Perot interferometer sensor for refractive index measurement of optical glass

    International Nuclear Information System (INIS)

    Chen Jihuan; Zhao Jiarong; Huang Xuguang; Huang Zhenjian

    2010-01-01

    A simple fiber-optic sensor based on Fabry-Perot interference for refractive index measurement of optical glass is investigated both theoretically and experimentally. A broadband light source is coupled into an extrinsic fiber Fabry-Perot cavity formed by the surfaces of a sensing fiber end and the measured sample. The interference signals from the cavity are reflected back into the same fiber. The refractive index of the sample can be obtained by measuring the contrast of the interference fringes. The experimental data meet with the theoretical values very well. The proposed technique is a new method for glass refractive index measurement with a simple, solid, and compact structure.

  17. A Green Fabry-Perot Cavity for Jefferson Lab Hall A Compton Polarimetry

    International Nuclear Information System (INIS)

    Rakhman, Abdurahim; Souder, Paul; Nanda, Sirish

    2009-01-01

    A green laser (CW, 532 nm) based Fabry-Perot cavity for high precision Compton Polarimetry is under development in Hall A of the Jefferson Laboratory. In this paper, we present the principle and the preliminary studies for our test cavity.

  18. Characterization of a Fabry--Perot interferometer and a dc arc plasma jet for spectrochemical analysis

    Energy Technology Data Exchange (ETDEWEB)

    Ford, C.S.

    1979-01-01

    A system involving the use of a Fabry--Perot interferometer in combination with a dc arc plasma jet has been constructed and characterized for spectrochemical analysis. Parameters such as flow rate ratio, observation region, electrode composition and orifice size have been considered. Improvements such as noise reduction and dry aerosol introduction of samples were suggested.

  19. Crescent shaped Fabry-Perot fiber cavity for ultra-sensitive strain measurement

    Science.gov (United States)

    Liu, Ye; Wang, D. N.; Chen, W. P.

    2016-12-01

    Optical Fabry-Perot interferometer sensors based on inner air-cavity is featured with compact size, good robustness and high strain sensitivity, especially when an ultra-thin air-cavity is adopted. The typical shape of Fabry-Perot inner air-cavity with reflection mode of operation is elliptic, with minor axis along with and major axis perpendicular to the fiber length. The first reflection surface is diverging whereas the second one is converging. To increase the visibility of the output interference pattern, the length of major axis should be large for a given cavity length. However, the largest value of the major axis is limited by the optical fiber diameter. If the major axis length reaches the fiber diameter, the robustness of the Fabry-Perot cavity device would be decreased. Here we demonstrate an ultra-thin crescent shaped Fabry-Perot cavity for strain sensing with ultra-high sensitivity and low temperature cross-sensitivity. The crescent-shape cavity consists of two converging reflection surfaces, which provide the advantages of enhanced strain sensitivity when compared with elliptic or D-shaped FP cavity. The device is fabricated by fusion splicing an etched multimode fiber with a single mode fiber, and hence is simple in structure and economic in cost.

  20. Transfer functions of double- and multiple-cavity Fabry-Perot filters driven by Lorentzian sources.

    Science.gov (United States)

    Marti, J; Capmany, J

    1996-12-20

    We derive expressions for the transfer functions of double- and multiple-cavity Fabry-Perot filters driven by laser sources with Lorentzian spectrum. These are of interest because of their applications in sensing and channel filtering in optical frequency-division multiplexing networks.

  1. Folded Fabry-Perot quasi-optical ring resonator diplexer Theory and experiment

    Science.gov (United States)

    Pickett, H. M.; Chiou, A. E. T.

    1983-01-01

    Performance of folded Fabry-Perot quasi-optical ring resonator diplexers with different geometries of reflecting surfaces is investigated both theoretically and experimentally. Design of optimum surface geometry for minimum diffraction, together with the figure of merit indicating improvement in performance, are given.

  2. Large-area Fabry-Perot modulator based on electro-optic polymers

    DEFF Research Database (Denmark)

    Benter, Nils; Bertram, Ralph Peter; Soergel, Elisabeth

    2006-01-01

    We present a large-area electro-optic Fabry-Perot modulator utilizing a photoaddressable bis-azo polymer placed between two dielectric mirrors with an open aperture of 2 cm. A modulation efficientcy of 1% at an effective modulation voltage of 20 V for a wavelength of 1.55 mymeter is demonstrated...

  3. Characterization of a Fabry--Perot interferometer and a dc arc plasma jet for spectrochemical analysis

    International Nuclear Information System (INIS)

    Ford, C.S.

    1979-01-01

    A system involving the use of a Fabry--Perot interferometer in combination with a dc arc plasma jet has been constructed and characterized for spectrochemical analysis. Parameters such as flow rate ratio, observation region, electrode composition and orifice size have been considered. Improvements such as noise reduction and dry aerosol introduction of samples were suggested

  4. High time resolution measurements of the thermosphere from Fabry-Perot Interferometer measurements of atomic oxygen

    Directory of Open Access Journals (Sweden)

    E. A. K. Ford

    2007-06-01

    Full Text Available Recent advances in the performance of CCD detectors have enabled a high time resolution study of the high latitude upper thermosphere with Fabry-Perot Interferometers (FPIs to be performed. 10-s integration times were used during a campaign in April 2004 on an FPI located in northern Sweden in the auroral oval. The FPI is used to study the thermosphere by measuring the oxygen red line emission at 630.0 nm, which emits at an altitude of approximately 240 km. Previous time resolutions have been 4 min at best, due to the cycle of look directions normally observed. By using 10 s rather than 40 s integration times, and by limiting the number of full cycles in a night, high resolution measurements down to 15 s were achievable. This has allowed the maximum variability of the thermospheric winds and temperatures, and 630.0 nm emission intensities, at approximately 240 km, to be determined as a few minutes. This is a significantly greater variability than the often assumed value of 1 h or more. A Lomb-Scargle analysis of this data has shown evidence of gravity wave activity with waves with short periods. Gravity waves are an important feature of mesosphere-lower thermosphere (MLT dynamics, observed using many techniques and providing an important mechanism for energy transfer between atmospheric regions. At high latitudes gravity waves may be generated in-situ by localised auroral activity. Short period waves were detected in all four clear nights when this experiment was performed, in 630.0 nm intensities and thermospheric winds and temperatures. Waves with many periodicities were observed, from periods of several hours, down to 14 min. These waves were seen in all parameters over several nights, implying that this variability is a typical property of the thermosphere.

  5. On-Chip High-Finesse Fabry-Perot Microcavities for Optical Sensing and Quantum Information

    Directory of Open Access Journals (Sweden)

    Mohammad H. Bitarafan

    2017-07-01

    Full Text Available For applications in sensing and cavity-based quantum computing and metrology, open-access Fabry-Perot cavities—with an air or vacuum gap between a pair of high reflectance mirrors—offer important advantages compared to other types of microcavities. For example, they are inherently tunable using MEMS-based actuation strategies, and they enable atomic emitters or target analytes to be located at high field regions of the optical mode. Integration of curved-mirror Fabry-Perot cavities on chips containing electronic, optoelectronic, and optomechanical elements is a topic of emerging importance. Micro-fabrication techniques can be used to create mirrors with small radius-of-curvature, which is a prerequisite for cavities to support stable, small-volume modes. We review recent progress towards chip-based implementation of such cavities, and highlight their potential to address applications in sensing and cavity quantum electrodynamics.

  6. A tunable Fabry-Perot filter (λ/18) based on all-dielectric metamaterials

    Science.gov (United States)

    Ao, Tianhong; Xu, Xiangdong; Gu, Yu; Jiang, Yadong; Li, Xinrong; Lian, Yuxiang; Wang, Fu

    2018-05-01

    A tunable Fabry-Perot filter composed of two separated all-dielectric metamaterials is proposed and numerically investigated. Different from metallic metamaterials reflectors, the all-dielectric metamaterials are constructed by high-permittivity TiO2 cylinder arrays and exhibit high reflection in a broadband of 2.49-3.08 THz. The high reflection is attributed to the first and second Mie resonances, by which the all-dielectric metamaterials can serve as reflectors in the Fabry-Perot filter. Both the results from phase analysis method and CST simulations reveal that the resonant frequency of the as-proposed filter appears at 2.78 THz, responding to a cavity with λ/18 wavelength thickness. Particularly, the resonant frequency can be adjusted by changing the cavity thickness. This work provides a feasible approach to design low-loss terahertz filters with a thin air cavity.

  7. Conductance oscillation in graphene-nanoribbon-based electronic Fabry-Perot resonators

    International Nuclear Information System (INIS)

    Zhang Yong; Han Mei; Shen Linjiang

    2010-01-01

    By using the tight-binding approximation and the Green's function method, the quantum conductance of the Fabry-Perot-like electronic resonators composed of zigzag and metallic armchair edge graphene nanoribbons (GNRs) was studied numerically. Obtained results show that due to Fabry-Perot-like electronic interference, the conductance of the GNR resonators oscillates periodically with the Fermi energy. The effects of disorders and coupling between the electrodes and the GNR on conductance oscillations were explored. It is found that the conductance oscillations appear at the strong coupling and become resonant peaks as the coupling is very weak. It is also found that the strong disorders in the GNR can smear the conductance oscillation periods. In other words, the weak coupling and the strong disorders all can blur the conductance oscillations, making them unclearly distinguished.

  8. Experimental study of neutron-optical potential with absorption using Fabry-Perot magnetic resonator

    International Nuclear Information System (INIS)

    Hino, M.; Tasaki, S.; Ebisawa, T.; Kawai, T.; Achiwa, N.; Yamazaki, D.

    1999-01-01

    Complete text of publication follows. Recently spin precession angles of neutrons tunneling and non-tunneling through [Permalloy45(PA)-germanium(Ge)]-PA Fabry-Perot magnetic resonator have been observed [1]. The spin precession angle is well reproduced by the theoretical phase difference of up and down spin neutron wave function based on one-dimensional Schroedinger equation using optical potential model [2]. Spin precession angle and transmission probability of neutron through PA-(Ge/Gd)-PA Fabry-Perot magnetic resonator are presented, where the gap(Ge/Gd) layer consists of germanium and gadolinium atoms, and the optical potential model for magnetic multilayer system with absorption is discussed. (author) [1] M. Hino, et al., Physica B 241-243, 1083 (1998).; [2] S. Yamada, et al., Annu. Rep. Res. Reactor Inst. Kyoto Univ. 11, 8 (1978)

  9. Understanding the concept of resolving power in the Fabry-Perot interferometer using a digital simulation

    International Nuclear Information System (INIS)

    Juvells, I; Carnicer, A; Ferre-Borrull, J; MartIn-Badosa, E; Montes-Usategui, M

    2006-01-01

    The resolution concept in connection with the Fabry-Perot interferometer is difficult to understand for undergraduate students enrolled in physical optics courses. The resolution criterion proposed in textbooks for distinguishing equal intensity maxima and the deduction of the resolving power equation is formal and non-intuitive. In this paper, we study the practical meaning of the resolution criterion and resolution power using a computer simulation of a Fabry-Perot interferometer. The light source in the program has two monochromatic components, the wavelength difference being tunable by the user. The student can also adjust other physical parameters so as to obtain different simulation results. By analysing the images and graphics of the simulation, the resolving power concept becomes intuitive and understandable

  10. Temperature-independent refractometer based on fiber-optic Fabry-Perot interferometer

    Science.gov (United States)

    Li, Jiacheng; Qiao, Xueguang; Wang, Ruohui; Rong, Qiangzhou; Bao, Weijia; Shao, Zhihua; Yang, Tingting

    2016-04-01

    A miniature fiber-optic refractometer based on Fabry-Perot interferometer (FPI) has been proposed and experimentally demonstrated. The sensing head consists of a short section of photonics crystal fiber (PCF) spliced to a single mode fiber (SMF), in which the end-face of the PCF is etched to remove holey structure with hydrofluoric (HF) acid. A Fabry-Perot interference spectrum is achieved based on the reflections from the fusion splicing interface and the end-face of the core of PCF. The interference fringe is sensitive to the external refractive index (RI) with an intensity-referenced sensitivity of 358.27 dB/RIU ranging from 1.33 to 1.38. The sensor has also been implemented for the concentration measurement of λ-phage DNA solution. In addition, the dip intensity is insensitive to the ambient temperature variation, making it a good candidate for temperature-independent bio-sensing area.

  11. High-Temperature Sensor Based on Fabry-Perot Interferometer in Microfiber Tip

    Directory of Open Access Journals (Sweden)

    Zhenshi Chen

    2018-01-01

    Full Text Available A miniaturized tip Fabry-Perot interferometer (tip-FPI is proposed for high-temperature sensing. It is simply fabricated for the first time by splicing a short length of microfiber (MF to the cleaved end of a standard single mode fiber (SMF with precise control of the relative cross section position. Such a MF acts as a Fabry-Perot (FP cavity and serves as a tip sensor. A change in temperature modifies the length and refractive index of the FP cavity, and then a corresponding change in the reflected interference spectrum can be observed. High temperatures of up to 1000 °C are measured in the experiments, and a high sensitivity of 13.6 pm/°C is achieved. This compact sensor, with tip diameter and length both of tens of microns, is suitable for localized detection, especially in harsh environments.

  12. On-Chip High-Finesse Fabry-Perot Microcavities for Optical Sensing and Quantum Information.

    Science.gov (United States)

    Bitarafan, Mohammad H; DeCorby, Ray G

    2017-07-31

    For applications in sensing and cavity-based quantum computing and metrology, open-access Fabry-Perot cavities-with an air or vacuum gap between a pair of high reflectance mirrors-offer important advantages compared to other types of microcavities. For example, they are inherently tunable using MEMS-based actuation strategies, and they enable atomic emitters or target analytes to be located at high field regions of the optical mode. Integration of curved-mirror Fabry-Perot cavities on chips containing electronic, optoelectronic, and optomechanical elements is a topic of emerging importance. Micro-fabrication techniques can be used to create mirrors with small radius-of-curvature, which is a prerequisite for cavities to support stable, small-volume modes. We review recent progress towards chip-based implementation of such cavities, and highlight their potential to address applications in sensing and cavity quantum electrodynamics.

  13. Quantum transport in bilayer graphene. Fabry-Perot interferences and proximity-induced superconductivity

    International Nuclear Information System (INIS)

    Du, Renjun

    2015-01-01

    Bilayer graphene (BLG) p-n junctions made of hBN-BLG-hBN (hexagonal boron nitride) heterostructures enable ballistic transport over long distances. We investigate Fabry-Perot interferences, and detect that the bilayer-like anti-Klein tunneling transits into single-layer-like Klein tunneling when tuning the Fermi level towards the band edges. Furthermore, the proximity-induced superconductivity has been studied in these devices with Al leads.

  14. Fabry-Perot Interferometer Performance as Temperature Sensor for Use in Electrical Power System Applications

    Directory of Open Access Journals (Sweden)

    Sanjoy Mandal

    2007-09-01

    Full Text Available Transfer function model of the loss less Fabry-Perot cavity (FPI, developed in Z-domain is presented in this paper. Frequency response analysis of the model was carried out in MATLAB environment to explain the behavior of the interferometer and its potential as temperature sensor was studied. Analysis reveals a highly sensitive temperature sensor that can be used in electrical engineering power system applications.

  15. Pemodelan Tapis Fabry-perot pada Serat Optik dengan Menggunakan Fiber Bragg Grating

    OpenAIRE

    Pramuliawati, Septi; ', Saktioto; ', Defrianto

    2015-01-01

    Fabry-perot filter was successfully developed by a uniform Fiber Bragg Grating in fiber optic. A characterization of Bragg Grating was analyzed by using computational model with second-order of Transfer Matrix Method based on Coupled Mode Theory. The reflectivity, length of grating, and bandwidth were parametrics to determine the performance of single Bragg Grating. The transmission spectrum showed the longer grating is designed, the larger the reflectivity was produced, so that the transmiss...

  16. Differential Radiometers Using Fabry-Perot Interferometric Technique for Remote Sensing of Greenhouse Gases

    Science.gov (United States)

    Georgieva, Elena M.; Heaps,William S.; Wilson, Emily L.

    2007-01-01

    A new type of remote sensing radiometer based upon the Fabry-Perot interferometric technique has been developed at NASA's Goddard Space Flight Center and tested from both ground and aircraft platform. The sensor uses direct or reflected sunlight and has channels for measuring column concentration of carbon dioxide at 1570 nm, oxygen lines sensitive to pressure and temperature at 762 and 768 nm, and water vapor (940 nm). A solid Fabry-Perot etalon is used as a tunable narrow bandpass filter to restrict the measurement to the gas of interest's absorption bands. By adjusting the temperature of the etalon, which changes the index of refraction of its material, the transmission fringes can be brought into nearly exact correspondence with absorption lines of the particular species. With this alignment between absorption lines and fringes, changes in the amount of a species in the atmosphere strongly affect the amount of light transmitted by the etalon and can be related to gas concentration. The technique is applicable to different chemical species. We have performed simulations and instrument design studies for CH4, "Cot isotope, and CO detection. Index Terms- Absorbing media, Atmospheric measurements, Fabry-Perot interferometers, Optical interferometry, Remote sensing.

  17. Use of a Fabry-Perot resonator at millimeter wave frequencies in the determination of thin-film resistivities

    Energy Technology Data Exchange (ETDEWEB)

    Hogan, S. J.

    1979-08-01

    A novel contact-free method of measuring resistivity of thin semiconducting films on highly conductive substrates is described. The material structure studied is commonly encountered in thin-film solar cell development. The microwave technique that involves using a semiconfocal Fabry-Perot cavity at a wavelength of 3 mm is discussed in detail. The sample consists o a thin film of CdS on a brass substrate and is mounted on the flat reflector of the cavity. Using field perturbation methods, an expression is derived that relates the film resistivity to the cavity quality factor Q. The cavity quality factor is an easily measured parameter and, by comparing measurements of Q with and without the sample mounted, an accurate measure of the resistivity is obtained. Accuracy of measurements and necessary sample constraints are discussed in detail. Three samples of CdS were measured on brass substrates spanning an order of magnitude in resistivity difference. The results of the method described agree with those of another method that involves current voltage measurement after application of a metallic contact. Unlike the latter method, however, the new technique provides a nondestructive way of measuring the resistivity of semiconductor films on conducting substrates and is amenable to automation.

  18. Polar cap mesosphere wind observations: comparisons of simultaneous measurements with a Fabry-Perot interferometer and a field-widened Michelson interferometer.

    Science.gov (United States)

    Fisher, G M; Killeen, T L; Wu, Q; Reeves, J M; Hays, P B; Gault, W A; Brown, S; Shepherd, G G

    2000-08-20

    Polar cap mesospheric winds observed with a Fabry-Perot interferometer with a circle-to-line interferometer optical (FPI/CLIO) system have been compared with measurements from a field-widened Michelson interferometer optimized for E-region winds (ERWIN). Both instruments observed the Meinel OH emission emanating from the mesopause region (approximately 86 km) at Resolute Bay, Canada (74.9 degrees N, 94.9 degrees W). This is the first time, to our knowledge, that winds measured simultaneously from a ground-based Fabry-Perot interferometer and a ground-based Michelson interferometer have been compared at the same location. The FPI/CLIO and ERWIN instruments both have a capability for high temporal resolution (less than 10 min for a full scan in the four cardinal directions and the zenith). Statistical comparisons of hourly mean winds for both instruments by scatterplots show excellent agreement, indicating that the two optical techniques provide equivalent observations of mesopause winds. Small deviations in the measured wind can be ascribed to the different zenith angles used by the two instruments. The combined measurements illustrate the dominance of the 12-h wave in the mesopause winds at Resolute Bay, with additional evidence for strong gravity wave activity with much shorter periods (tens of minutes). Future operations of the two instruments will focus on observation of complementary emissions, providing a unique passive optical capability for the determination of neutral winds in the geomagnetic polar cap at various altitudes near the mesopause.

  19. Initial daytime and nighttime SOFDI observations of thermospheric winds from Fabry-Perot Doppler shift measurements of the 630-nm OI line-shape profile

    Directory of Open Access Journals (Sweden)

    A. J. Gerrard

    2011-09-01

    Full Text Available In this paper we present both night and day thermospheric wind observations made with the Second-generation, Optimized, Fabry-Perot Doppler Imager (SOFDI, a novel triple-etalon Fabry-Perot interferometer (FPI designed to make 24-h measurements of thermospheric winds from OI 630-nm emission. These results were obtained from the northeastern United States and from under the magnetic equator at Huancayo, Peru and demonstrate the current instrument capability for measurements of Doppler shifts for either night or day. We found the uncertainties in the measurements agree with expected values based upon forward modeling calculations; nighttime wind components having an uncertainty of ~20-m s−1 at 30-min resolution and daytime wind components having an uncertainty of ~70-m s−1 at 20-min resolution. The nighttime uncertainties are typically larger than those seen with traditional single-etalon FPIs, which occur at the cost of being able to achieve daytime measurements. The thermospheric wind measurements from Huancayo replicate recently reported CHAMP zonal winds and are in disagreement with current empirical wind climatologies. In addition, we discuss the incorporation of how multiple point heads in the SOFDI instrument will allow for unique studies of gravity wave activity in future measurements.

  20. Statistical analysis of thermospheric gravity waves from Fabry-Perot Interferometer measurements of atomic oxygen

    Directory of Open Access Journals (Sweden)

    E. A. K. Ford

    2008-02-01

    Full Text Available Data from the Fabry-Perot Interferometers at KEOPS (Sweden, Sodankylä (Finland, and Svalbard (Norway, have been analysed for gravity wave activity on all the clear nights from 2000 to 2006. A total of 249 nights were available from KEOPS, 133 from Sodankylä and 185 from the Svalbard FPI. A Lomb-Scargle analysis was performed on each of these nights to identify the periods of any wave activity during the night. Comparisons between many nights of data allow the general characteristics of the waves that are present in the high latitude upper thermosphere to be determined. Comparisons were made between the different parameters: the atomic oxygen intensities, the thermospheric winds and temperatures, and for each parameter the distribution of frequencies of the waves was determined. No dependence on the number of waves on geomagnetic activity levels, or position in the solar cycle, was found. All the FPIs have had different detectors at various times, producing different time resolutions of the data, so comparisons between the different years, and between data from different sites, showed how the time resolution determines which waves are observed. In addition to the cutoff due to the Nyquist frequency, poor resolution observations significantly reduce the number of short-period waves (<1 h period that may be detected with confidence. The length of the dataset, which is usually determined by the length of the night, was the main factor influencing the number of long period waves (>5 h detected. Comparisons between the number of gravity waves detected at KEOPS and Sodankylä over all the seasons showed a similar proportion of waves to the number of nights used for both sites, as expected since the two sites are at similar latitudes and therefore locations with respect to the auroral oval, confirming this as a likely source region. Svalbard showed fewer waves with short periods than KEOPS data for a season when both had the same time resolution data

  1. Application of the CCD Fabry-Perot Annular Summing Technique to Thermospheric O(1)D.

    Science.gov (United States)

    Coakley, Monica Marie

    1995-01-01

    This work will detail the verification of the advantages of the Fabry-Perot charge coupled device (CCD) annular summing technique, the development of the technique for analysis of daysky spectra, and the implications of the resulting spectra for neutral temperature and wind measurements in the daysky thermosphere. The daysky spectral feature of interest is the bright (1 kilo-Rayleigh) thermospheric (OI) emission at 6300 A which had been observed in the nightsky in order to determine winds and temperatures in the vicinity of the altitude of 250 km. In the daysky, the emission line sits on top of a bright Rayleigh scattered continuum background which significantly complicates the observation. With a triple etalon Fabry-Perot spectrometer, the continuum background can be reduced while maintaining high throughput and high resolution. The inclusion of a CCD camera results in significant savings in integration time over the two more standard scanning photomultiplier systems that have made the same wind and temperature measurements in the past. A comparable CCD system can experience an order of magnitude savings in integration time over a PMT system. Laboratory and field tests which address the advantages and limitations of both the Fabry-Perot CCD annular summing technique and the daysky CCD imaging are included in Chap. 2 and Chap. 3. With a sufficiently large throughput associated with the spectrometer and a CCD detector, rapid observations (~4 minute integrations) can be made. Extraction of the line width and line center from the daysky near-continuum background is complicated compared to the nightsky case, but possible. Methods of fitting the line are included in Chap. 4. The daysky O ^1D temperatures are consistent with a lower average emission height than predicted by models. The data and models are discussed in Chap. 5. Although some discrepancies exist between resulting temperatures and models, the observations indicate the potential for other direct measurements

  2. Auroral zone thermospheric dynamics using Fabry-Perot interferometric measurements of the O1 15867 K emission

    International Nuclear Information System (INIS)

    Sica, R.J.

    1985-01-01

    Forty-four nights of thermospheric neutral wind and temperature measurements were obtained from College, Alaska (65 0 invariant latitude) during solar maximum using a ground-based Fabry-Perot interferometer. When averaged by increasing geomagnetic activity, the wind exhibits two main features. First, the general flow pattern poleward and westward in the evening, changing to southward and eastward in the morning, persists with increasing activity. The flow velocity increases and the change in direction occurs earlier in magnetic local time as the geomagnetic activity increases. Second, as the activity increases, the meridional wind pattern shifts equatorward with the auroral oval. Consequently, the low geomagnetic activity average wind pattern in the north is similar to the moderate activity average pattern in the south. The average thermospheric temperature is governed by the geomagnetic activity and by the previous day's 10.7 cm solar flux. The increase in temperature with solar flux is about the same as with auroral activity (approx. = 225 0 K). The dynamical behavior on individual nights highlights the importance of local auroral substorms, which can cause large deviations from both global models and the observed averages. Coupling between the E and F regions is inferred by comparing the bulk motion of the optical aurora and the observed wind. Westward-drifting auroral forms accompany the westward evening zonal wind

  3. Application of Fabry-Perot velocimeter to high-speed experiments

    International Nuclear Information System (INIS)

    Chaw, H.H.; McMillan, C.F.; Osher, J.E.

    1988-01-01

    The Fabry-Perot (F-P) velocimeter is a useful instrument for measuring the velocity of objects at speeds ranging from fractions of a kilometer per second to a few tens of kilometers per second and up. Because of its immunity to electromagnetic interference and its velocity resolution, it has become the prime diagnostic tool in our electric-gun facility. Examples of its application to high speed experiments are discussed, including: electric-gun flyer studies, spallation of materials under high-speed impact, momentum-transfer studies, pressure pulse created by high-velocity impact, and detonation-wave studies in high-explosive experiments

  4. Fiber Fabry-Perot sensors for detection of partial discharges in power transformers.

    Science.gov (United States)

    Yu, Bing; Kim, Dae Woong; Deng, Jiangdong; Xiao, Hai; Wang, Anbo

    2003-06-01

    A diaphragm-based interferometric fiberoptic sensor that uses a low-coherence light source was designed and tested for on-line detection of the acoustic waves generated by partial discharges inside high-voltage power transformers. The sensor uses a fused-silica diaphragm and a single-mode optical fiber encapsulated in a fused-silica glass tube to form an extrinsic Fabry-Perot interferometer, which is interrogated by low-coherence light. Test results indicate that these fiber optic acoustic sensors are capable of faithfully detecting acoustic signals propagating inside transformer oil with high sensitivity and wide bandwidth.

  5. The low frequency facility Fabry-Perot cavity used as a speed-meter

    Energy Technology Data Exchange (ETDEWEB)

    Di Virgilio, A.; Braccini, S.; Ballardin, G.; Bradaschia, C.; Cella, G.; Cuoco, E.; Dattilo, V.; Fazzi, M.; Ferrante, I.; Fidecaro, F.; Frasconi, F.; Giazotto, A.; Gennai, A.; Holloway, L.H.; La Penna, P.; Lomtadze, T.; Losurdo, G.; Passaquieti, R.; Passuello, D.; Poggiani, R.; Porzio, A.; Puppo, P.; Raffaelli, F.; Rapagnani, P.; Ricci, F.; Ricciardi, I.; Solimeno, S.; Stanga, R.; Vetrano, F.; Zhou, Z

    2003-09-15

    Fabry-Perot cavities have many different applications as scientific instruments. In the gravitational waves research field they are extensively used to frequency stabilize lasers and to measure very small distance variations. In the present Letter a method to evaluate from the transmitted power only the relative speed and position of the mirrors of a cavity, having finesse F>40, is described. A displacement spectral sensitivity of the order of about 3x10{sup -10} m/Hz{sup -1/2} at 10 Hz is obtained with the cavity of the low frequency facility.

  6. Storage of laser pulses in a Fabry-Perot optical cavity for high flux x-ray

    International Nuclear Information System (INIS)

    Takezawa, K.; Honda, Y.; Sasao, N.; Araki, S.; Higashi, Y.; Taniguchi, T.; Urakawa, J.; Nomura, M.; Sakai, H.

    2004-01-01

    We have a plan to produce a high flux x-ray for medical use by using a Fabry-Perot optical cavity in which the lower pulses from a mode-locked laser are stored and enhanced. In this plan, the X-ray is produced from the Compton scattering of electrons in a storage ring with the laser light in the optical cavity. In order to increase X-ray flux, high power laser light is necessary. We show the enhancement of the laser power from the model locked laser with a Fabry-Perot optical cavity. (author)

  7. Hypersonic force measurements using internal balance based on optical micromachined Fabry-Perot interferometry

    Science.gov (United States)

    Qiu, Huacheng; Min, Fu; Zhong, Shaolong; Song, Xin; Yang, Yanguang

    2018-03-01

    Force measurements using wind tunnel balance are necessary for determining a variety of aerodynamic performance parameters, while the harsh environment in hypersonic flows requires that the measurement instrument should be reliable and robust, in against strong electromagnetic interference, high vacuum, or metal (oxide) dusts. In this paper, we demonstrated a three-component internal balance for hypersonic aerodynamic force measurements, using novel optical micromachined Fabry-Perot interferometric (FPI) strain gauges as sensing elements. The FPI gauges were fabricated using Micro-Opto-Electro-Mechanical Systems (MOEMS) surface and bulk fabrication techniques. High-reflectivity coatings are used to form a high-finesse Fabry-Perot cavity, which benefits a high resolution. Antireflective and passivation coatings are used to reduce unwanted interferences. The FPI strain gauge based balance has been calibrated and evaluated in a Mach 5 hypersonic flow. The results are compared with the traditional technique using the foil resistive strain gauge balance, indicating that the proposed balance based on the MOEMS FPI strain gauge is reliable and robust and is potentially suitable for the hypersonic wind tunnel harsh environment.

  8. An efficient hexagonal switched beam antenna structure based on Fabry-Perot cavity leaky-wave antenna

    Science.gov (United States)

    Aymen El Cafsi, Mohamed; Nedil, Mourad; Osman, Lotfi; Gharsallah, Ali

    2015-11-01

    A novel design of switched beam antenna (SBA) system based on Fabry-Perot cavity leaky-wave antenna (FPC LWA) is designed and fabricated for base station operating in the unlicensed ISM central frequency band at 5.8 GHz of the wireless local area network (WLAN) standard. The proposed SBA is designed with hexagonal shape of FPC LWA Arrays in order to get 360° of coverage. The single element of FPC LWA array is composed of a patch antenna and covered by a Partially Reflective Surface (PRS), which is composed of a Metal Strip Grating and printed on a high permittivity Superstrate. First, the Transmission Line Model of FPC LWA is introduced to analyse and calculate the far-field components in E- and H planes by using the Transverse Equivalent Network. This approach is then compared with other full wave's commercial software such as Ansoft HFSS and CST Microwave Studio. Second, a parametric study is performed to evaluate the effect of the angle formed by the two successive FPC LWA on the radiation efficiency of the activate sector. To examine the performance of the proposed SBA, experimental prototype was fabricated and measured. As a result, multiple orthogonal beams (six beams) of 10 dBi of gain with low Side Lobes Level and 360° of coverage are produced. This SBA structure is suitable for WLAN communication systems.

  9. Lineshape Engineering in an All-Pass Ring Resonator with Backreflection Coupled to a Symmetrical Fabry-Perot Resonator

    KAUST Repository

    Melnikov, Vasily

    2012-11-10

    We derive transfer functions for an all-pass ring resonator with internal backreflection coupled to a symmetrical Fabry-Perot resonator and demonstrate electromagnetically induced transparency-like and Fano-like lineshapes tunable by backreflection in the ring resonator.

  10. The comparison of environmental effects on michelson and fabry-perot interferometers utilized for the displacement measurement.

    Science.gov (United States)

    Wang, Yung-Cheng; Shyu, Lih-Horng; Chang, Chung-Ping

    2010-01-01

    The optical structure of general commercial interferometers, e.g., the Michelson interferometers, is based on a non-common optical path. Such interferometers suffer from environmental effects because of the different phase changes induced in different optical paths and consequently the measurement precision will be significantly influenced by tiny variations of the environmental conditions. Fabry-Perot interferometers, which feature common optical paths, are insensitive to environmental disturbances. That would be advantageous for precision displacement measurements under ordinary environmental conditions. To verify and analyze this influence, displacement measurements with the two types of interferometers, i.e., a self-fabricated Fabry-Perot interferometer and a commercial Michelson interferometer, have been performed and compared under various environmental disturbance scenarios. Under several test conditions, the self-fabricated Fabry-Perot interferometer was obviously less sensitive to environmental disturbances than a commercial Michelson interferometer. Experimental results have shown that induced errors from environmental disturbances in a Fabry-Perot interferometer are one fifth of those in a Michelson interferometer. This has proved that an interferometer with the common optical path structure will be much more independent of environmental disturbances than those with a non-common optical path structure. It would be beneficial for the solution of interferometers utilized for precision displacement measurements in ordinary measurement environments.

  11. Lineshape Engineering in an All-Pass Ring Resonator with Backreflection Coupled to a Symmetrical Fabry-Perot Resonator

    KAUST Repository

    Melnikov, Vasily; Roqan, Iman S.

    2012-01-01

    We derive transfer functions for an all-pass ring resonator with internal backreflection coupled to a symmetrical Fabry-Perot resonator and demonstrate electromagnetically induced transparency-like and Fano-like lineshapes tunable by backreflection in the ring resonator.

  12. Combined incoherent scatter radar and Fabry-Perot interferometer measurements of frictional heating effects over Millstone Hill during March 7-10, 1989

    International Nuclear Information System (INIS)

    Hagan, M.E.; Sipler, D.P.

    1991-01-01

    The authors introduce a methodology to calculate the effects of frictional heating associated with geomagnetic activity using simultaneous incoherent scatter radar and Fabry-Perot interferometer measurements. Vector measurements of ion drift from radar backscatter and neutral wind from optical shifts in the atomic oxygen red line over Millstone Hill, Massachusetts (43 degree N) for the nights of March 7-10, 1989 are presented and are characterized by the magnetic storm activity which prevailed. They combine these measurements to calculate differences in the ion and neutral velocity fields which approach 350 m/s during the most geomagnetically active period that they monitored near 01 UT on March 9. This velocity difference results in a 110 degree K heating of the ion gas at that time

  13. Readout of micromechanical cantilever sensor arrays by Fabry-Perot interferometry

    International Nuclear Information System (INIS)

    Wehrmeister, Jana; Fuss, Achim; Saurenbach, Frank; Berger, Ruediger; Helm, Mark

    2007-01-01

    The increasing use of micromechanical cantilevers in sensing applications causes a need for reliable readout techniques of micromechanical cantilever sensor (MCS) bending. Current optical beam deflection techniques suffer from drawbacks such as artifacts due to changes in the refraction index upon exchange of media. Here, an adaptation of the Fabry-Perot interferometer is presented that allows simultaneous determination of MCS bending and changes in the refraction index of media. Calibration of the instrument with liquids of known refraction index provides an avenue to direct measurement of bending with nanometer precision. Versatile construction of flow cells in combination with alignment features for substrate chips allows simultaneous measurement of two MCS situated either on the same, or on two different support chips. The performance of the instrument is demonstrate in several sensing applications, including adsorption experiments of alkanethioles on MCS gold surfaces, and measurement of humidity changes in air

  14. Enhanced Bulk-Edge Coulomb Coupling in Fractional Fabry-Perot Interferometers.

    Science.gov (United States)

    von Keyserlingk, C W; Simon, S H; Rosenow, Bernd

    2015-09-18

    Recent experiments use Fabry-Perot (FP) interferometry to claim that the ν=5/2 quantum Hall state exhibits non-Abelian topological order. We note that the experiments appear inconsistent with a model neglecting bulk-edge Coulomb coupling and Majorana tunneling, so we reexamine the theory of FP devices. Even a moderate Coulomb coupling may strongly affect some fractional plateaus, but very weakly affect others, allowing us to model the data over a wide range of plateaus. While experiments are consistent with the ν=5/2 state harboring Moore-Read topological order, they may have measured Coulomb effects rather than an "even-odd effect" due to non-Abelian braiding.

  15. Advanced Interrogation of Fiber-Optic Bragg Grating and Fabry-Perot Sensors with KLT Analysis

    Science.gov (United States)

    Tosi, Daniele

    2015-01-01

    The Karhunen-Loeve Transform (KLT) is applied to accurate detection of optical fiber sensors in the spectral domain. By processing an optical spectrum, although coarsely sampled, through the KLT, and subsequently processing the obtained eigenvalues, it is possible to decode a plurality of optical sensor results. The KLT returns higher accuracy than other demodulation techniques, despite coarse sampling, and exhibits higher resilience to noise. Three case studies of KLT-based processing are presented, representing most of the current challenges in optical fiber sensing: (1) demodulation of individual sensors, such as Fiber Bragg Gratings (FBGs) and Fabry-Perot Interferometers (FPIs); (2) demodulation of dual (FBG/FPI) sensors; (3) application of reverse KLT to isolate different sensors operating on the same spectrum. A simulative outline is provided to demonstrate the KLT operation and estimate performance; a brief experimental section is also provided to validate accurate FBG and FPI decoding. PMID:26528975

  16. Optical cascaded Fabry-Perot interferometer hydrogen sensor based on vernier effect

    Science.gov (United States)

    Li, Yina; Zhao, Chunliu; Xu, Ben; Wang, Dongning; Yang, Minghong

    2018-05-01

    An optical cascaded Fabry-Perot interferometer hydrogen sensor based on vernier effect has been proposed and achieved. The proposed sensor, which total length is ∼594 μm, is composed of a segment of large mode area fiber (LMAF) and a segment of hollow-core fiber (HCF). The proposed sensor is coated with the Pt-loaded WO3/SiO2 powder which will result in the increase of local temperature of the sensor head when exposed to hydrogen atmosphere. Thus the hydrogen sensor can be achieved by monitoring the change of resonant envelope wavelength. The hydrogen sensitivity is -1.04 nm/% within the range of 0 % -2.4 % which is greatly improved because of the vernier effect. The response time is ∼80 s. Due to its compact configuration, the proposed sensor provides a feasible and miniature structure to achieve detection of hydrogen.

  17. Fabry-Perot Interferometry in the Integer and Fractional Quantum Hall Regimes

    Science.gov (United States)

    McClure, Douglas; Chang, Willy; Kou, Angela; Marcus, Charles; Pfeiffer, Loren; West, Ken

    2011-03-01

    We present measurements of electronic Fabry-Perot interferometers in the integer and fractional quantum Hall regimes. Two classes of resistance oscillations may be seen as a function of magnetic field and gate voltage, as we have previously reported. In small interferometers in the integer regime, oscillations of the type associated with Coulomb interaction are ubiquitous, while those consistent with single-particle Aharonov-Bohm interference are seen to co-exist in some configurations. The amplitude scaling of both types with temperature and device size is consistent with a theoretical model. Oscillations are further observed in the fractional quantum Hall regime. Here the dependence of the period on the filling factors in the constrictions and bulk of the interferometer can shed light on the effective charge of the interfering quasiparticles, but care is needed to distinguish these oscillations from those associated with integer quantum Hall states. We acknowledge funding from Microsoft Project Q and IBM.

  18. A highly directive graphene antenna embedded inside a Fabry-Perot cavity in terahertz regime

    Science.gov (United States)

    Roshanaei, Majid; Karami, Hamidreza; Dehkhoda, Parisa; Esfahani, Hamid; Dabir, Fatemeh

    2018-05-01

    In this paper, a highly directive nano-thickness graphene-based antenna is introduced in the terahertz frequency band. The antenna is a graphene patch dipole which is placed between two Bragg mirrors called Fabry-Perot cavity. Tunability of the graphene's conductivity makes it possible to excite the desired resonances of the cavity. Here, first, a single resonant antenna is introduced at 5 THz with an enhanced gain from 2.11 dBi to 12.8 dBi with a beamwidth of 22.7°. Then, a triple resonant antenna at 4.7, 5 and 5.3 THz is presented with respective gains of 7.97, 11.9 and 8.52 dBi. Finally, the effect of dimensions and number of the dielectric layers of the cavity are studied in order to further increase in directivity.

  19. A new detection method used to calibrate Fabry-Perot interferometers in the infrared range

    International Nuclear Information System (INIS)

    Talvard, M.; Javon, C.; Garcin, M.; Thouvenin, D.

    1993-06-01

    Fabry-Perot interferometers are routinely used in the Tore Supra Tokamak in order to measure the time evolution of the electron temperature of the confined plasmas. Calibration of such interferometers requires the detection of very low DC levels (0.1 nV) with signal-to-noise ratios less than 10 -5 , which is generally not compatible with standard detection methods. A new correlation method to achieve this absolute calibration is proposed. It is based on a proper noise auto-correlation technique combined with an optimized signal filtering involving Fourier analysis. The advantages of the method are detailed and experimentally compared to standard averaging techniques, such as coherent addition and synchronous detection. The method can be used in a more general context every time very small amplitude signals are to be measured

  20. Fabry-Perot interferometry using an image-intensified rotating-mirror streak camera

    International Nuclear Information System (INIS)

    Seitz, W.L.; Stacy, H.L.

    1983-01-01

    A Fabry-Perot velocity interferometer system is described that uses a modified rotating mirror streak camera to recrod the dynamic fringe positions. A Los Alamos Model 72B rotating-mirror streak camera, equipped with a beryllium mirror, was modified to include a high aperture (f/2.5) relay lens and a 40-mm image-intensifier tube such that the image normally formed at the film plane of the streak camera is projected onto the intensifier tube. Fringe records for thin (0.13 mm) flyers driven by a small bridgewire detonator obtained with a Model C1155-01 Hamamatsu and Model 790 Imacon electronic streak cameras are compared with those obtained with the image-intensified rotating-mirror streak camera (I 2 RMC). Resolution comparisons indicate that the I 2 RMC gives better time resolution than either the Hamamatsu or the Imacon for total writing times of a few microseconds or longer

  1. Performance of a 1200 m long suspended Fabry-Perot cavity

    CERN Document Server

    Freise, A; Gossler, S; Grote, H; Heinzel, G; Lück, H B; Robertson, D I; Strain, K A; Ward, H; Willke, B; Hough, J; Danzmann, K

    2002-01-01

    Using one arm of the Michelson interferometer and the power recycling mirror of the interferometric gravitational wave detector GEO 600, we created a Fabry-Perot cavity with a length of 1200 m. The main purpose of this experiment was to gather first experience with the main optics, its suspensions and the corresponding control systems. The residual displacement of a main mirror is about 150 nm rms. By stabilizing the length of the 1200 m long cavity to the pre-stabilized laser beam, we achieved an error point frequency noise of 100 mu Hz Hz sup - sup 1 sup / sup 2 at 100 Hz Fourier frequency. In addition we demonstrated the reliable performance of all included subsystems by several 10-hour-periods of continuous stable operation. Thus the full frequency stabilization scheme for GEO 600 was successfully tested.

  2. Multimode fiber tip Fabry-Perot cavity for highly sensitive pressure measurement.

    Science.gov (United States)

    Chen, W P; Wang, D N; Xu, Ben; Zhao, C L; Chen, H F

    2017-03-23

    We demonstrate an optical Fabry-Perot interferometer fiber tip sensor based on an etched end of multimode fiber filled with ultraviolet adhesive. The fiber device is miniature (with diameter of less than 60 μm), robust and low cost, in a convenient reflection mode of operation, and has a very high gas pressure sensitivity of -40.94 nm/MPa, a large temperature sensitivity of 213 pm/°C within the range from 55 to 85 °C, and a relatively low temperature cross-sensitivity of 5.2 kPa/°C. This device has a high potential in monitoring environment of high pressure.

  3. The PVLAS experiment: measuring vacuum magnetic birefringence and dichroism with a birefringent Fabry-Perot cavity

    Energy Technology Data Exchange (ETDEWEB)

    Della Valle, Federico; Milotti, Edoardo [INFN, Trieste (Italy); Universita di Trieste, Dipt. di Fisica, Trieste (Italy); Ejlli, Aldo; Messineo, Giuseppe; Zavattini, Guido [INFN, Ferrara (Italy); Universita di Ferrara, Dipt. di Fisica e Scienze della Terra, Ferrara (Italy); Gastaldi, Ugo [INFN, Ferrara (Italy); Pengo, Ruggero; Ruoso, Giuseppe [INFN, Lab. Nazionale di Legnaro, Legnaro (Italy)

    2016-01-15

    Vacuum magnetic birefringence was predicted long time ago and is still lacking a direct experimental confirmation. Several experimental efforts are striving to reach this goal, and the sequence of results promises a success in the next few years. This measurement generally is accompanied by the search for hypothetical light particles that couple to two photons. The PVLAS experiment employs a sensitive polarimeter based on a high finesse Fabry-Perot cavity. In this paper we report on the latest experimental results of this experiment. The data are analysed taking into account the intrinsic birefringence of the dielectric mirrors of the cavity. Besides a new limit on the vacuum magnetic birefringence, the measurements also allow the model-independent exclusion of new regions in the parameter space of axion-like and milli-charged particles. In particular, these last limits hold also for all types of neutrinos, resulting in a laboratory limit on their charge. (orig.)

  4. Simultaneous wavelength and orbital angular momentum demultiplexing using tunable MEMS-based Fabry-Perot filter

    DEFF Research Database (Denmark)

    Lyubopytov, Vladimir; Porfirev, Alexey P.; Gurbatov, Stanislav O.

    2017-01-01

    In this paper, we experimentally demonstrate simultaneous wavelength and orbital angular momentum (OAM) multiplexing/demultiplexing of 10 Gbit/s data streams using a new on-chip micro-component-tunable MEMS-based Fabry-Perot filter integrated with a spiral phase plate. In the experiment, two......, maximum power penalties at the HD-FEC BER threshold relative to the 0.8 nm wavelength spacing read 0.83, 0.84 and 1.15 dB when multiplexing a Gaussian beam and OAM beams of 1st, 2nd and 3rd orders respectively. The novelty and impact of the proposed filter design is in providing practical, integrable...

  5. Effects of the time delays in a non linear pendular Fabry-Perot

    International Nuclear Information System (INIS)

    Tourrenc, P.; Deruelle, N.

    1985-01-01

    We study a one arm pendular Fabry-Perot interferometer with specifications corresponding to the two arms interferometers designed to detect gravitational radiation. We consider the non linearities originating from the radiation force and the effects of time delays due to the finite length of the arm. We derive the exact and the associated ''predictivised'' equations for the motion of the suspended mirror. We show that effects of time delays increase considerably the stability of the device when the optical relaxation time is of the order of the period of the pendulum, a case of relevance when light is recycled. However the thermal noise does not seem to be much modified when calculated within a simple approximation scheme

  6. A fully computerized multi-pass Fabry-Perot interferometer for Rayleigh-Brillouin scattering experiments

    International Nuclear Information System (INIS)

    Bohidar, H.; Berland, T.; Boger, F.; Joessang, T.; Feder, J.

    1987-01-01

    The development of a Multipass Fabry-Perot interforometer assembly for use in Rayleigh-Brillouin scattering experiments is reported. The optical alignment and the scattered signal data acquisition have been completely computerized. Digital scanning and alignment strategies of the Fabry-Perot resonator have been incorporated, which makes this instrument quite unique in this respect. The high contrast (∼10 10 ) and finesse (∼50) offered by this instrument makes it possible to detect Brillouin peaks from samples that have a small Brillouin scattering cross-section. As part of this system a compatible and precision sample chamber has been constructed, which has been designed to operate in the pressure and temperature ranges of 1-1000B and 20-150 o C, respectively. The cell has been constructed to be small and compact, but it still has a large heat capacity (∼250J/K) which ensures easy and stable temperature control of the liquid sample volume which has a size of 40 mm 3 . The achievable temperature stability is +-1mK and +-2mK for operating temperatures below and above 100 o C, respectively. The pressure stability is in the range of +-0.05B of the set pressure for pressures below 100B and it is +-0.05% for higher pressures up to 1000B. Both pressure and temperature are remotely monitored and controlled by a ND/100 computer. Special care has been taken in designing the optics of the pressure cell to ensure that both the primary and secondary reflections from the entrance window, as well as the main beam, go out of the scattering region in order to achieve higher signal-to-noise ratio in actual experiments

  7. Luminosity optimization schemes in Compton experiments based on Fabry-Perot optical resonators

    Directory of Open Access Journals (Sweden)

    Alessandro Variola

    2011-03-01

    Full Text Available The luminosity of Compton x-ray and γ sources depends on the average current in electron bunches, the energy of the laser pulses, and the geometry of the particle bunch to laser pulse collisions. To obtain high power photon pulses, these can be stacked in a passive optical resonator (Fabry-Perot cavity especially when a high average flux is required. But, in this case, owing to the presence of the optical cavity mirrors, the electron bunches have to collide at an angle with the laser pulses with a consequent luminosity decrease. In this article a crab-crossing scheme is proposed for Compton sources, based on a laser amplified in a Fabry-Perot resonator, to eliminate the luminosity losses given by the crossing angle, taking into account that in laser-electron collisions only the electron bunches can be tilted at the collision point. We report the analytical study on the crab-crossing scheme for Compton gamma sources. The analytical expression for the total yield of photons generated in Compton sources with the crab-crossing scheme of collision is derived. The optimal collision angle of the bunch was found to be equal to half of the collision angle. At this crabbing angle, the maximal yield of scattered off laser photons is attained thanks to the maximization, in the collision process, of the time spent by the laser pulse in the electron bunch. Estimations for some Compton source projects are presented. Furthermore, some schemes of the optical cavities configuration are analyzed and the luminosity calculated. As illustrated, the four-mirror two- or three-dimensional scheme is the most appropriate for Compton sources.

  8. A Novel, Poly-Etalon, Fabry-Perot for Planetary Research

    Science.gov (United States)

    Kerr, Robert B.; Doe, Richard; Noto, John

    1997-01-01

    In an effort to develop a mechanically robust, high throughput and solid state spectrometer several liquid crystal Fabry-Perot etalons were constructed. The etalons were tested for spectral response, radiation resistance and optical transmission. The first year of this project was spent developing and understanding the properties of the liquid crystal etalons; in the second year an intensified all-sky imaging system was developed around a pair of LC etalons. The imaging system, developed jointly with SRI International represents a unique brassboard to demonstrate the use of LC etalons as tunable filters. The first set of etalons constructed in year one of this project were tested for spectral response and throughput while etalon surrogates were exposed to proton radiation simulating the exposure of an object in Low Earth Orbit (LEO). The 2" diameter etalons had a measure finesse of approximately 10 and were tunable over five orders. Liquid crystals exposed to proton irradiation showed no signs of damage. In year two two larger diameter (3") etalons were constructed with gaps of 3 and 5 microns. This pair of etalons is for use in a high resolution, all-sky spectral imager. The WATUMI imager system follows the heritage of all sky, narrow band, intensified imagers however it includes two LC Fabry-Perot etalons to provide tunability and the ability to switch wavelengths rapidly, an import consideration in auroral airglow imaging. This work also resulted in two publications and one poster presentation. The instrument will be uniquely capable, with superior throughput and speed, to measure optical airglow of multiple emission lines in harsh conditions.

  9. Microwave radiometric aircraft observations of the Fabry-Perot interference fringes of an ice-water system

    Science.gov (United States)

    Harrington, R. F.; Swift, C. T.; Fedors, J. C.

    1980-01-01

    Airborne stepped-frequency microwave radiometer (SFMR) observations of the Fabry-Perot interference fringes of ice-water systems are discussed. The microwave emissivity at normal incidence of a smooth layered dielectric medium over a semi-infinite dielectric medium is examined for the case of ice over water as a function of ice thickness and attenuation coefficient, and the presence of quarter-wavelength oscillations in emissivity as the ice thickness and frequency are varied is pointed out. Experimental observations of pronounced quarter-wavelength oscillations in radiometric brightness temperature due to the Fabry-Perot interference fringes over smooth sea ice and lake ice varying in roughness as the radiometer frequencies were scanned are then presented.

  10. Optical power equalization for upstream traffic with injection-locked Fabry-Perot lasers in TDM-PON

    Science.gov (United States)

    Huang, Ting-Tsan; Sheu, Lih-Gen; Chi, Sien

    2010-10-01

    An optical power equalization of upstream traffic in time-division-multiplexed passive optical network (TDM-PON) based on injection-locked Fabry-Perot lasers has been experimentally investigated. The upstream transmitters with stable spectrum are achieved by using an external injection light source in the optical line terminal (OLT). The different upstream powers can be equalized by injection locking a Fabry-Perot laser diode (FP-LD) biased below threshold current in OLT. The dynamic upstream power range from - 8.5 to - 19.5 db m is reduced to a 1.6 dB maximal power variation, when the uplink signal is directly modulated at 1.25 Gb/s.

  11. Passive harmonic mode locking by mode selection in Fabry-Perot diode lasers with patterned effective index.

    Science.gov (United States)

    Bitauld, David; Osborne, Simon; O'Brien, Stephen

    2010-07-01

    We demonstrate passive harmonic mode locking of a quantum-well laser diode designed to support a discrete comb of Fabry-Perot modes. Spectral filtering of the mode spectrum was achieved using a nonperiodic patterning of the cavity effective index. By selecting six modes spaced at twice the fundamental mode spacing, near-transform-limited pulsed output with 2 ps pulse duration was obtained at a repetition rate of 100 GHz.

  12. A Fabry-Perot Interferometry Based MRI-Compatible Miniature Uniaxial Force Sensor for Percutaneous Needle Placement

    OpenAIRE

    Shang, Weijian; Su, Hao; Li, Gang; Furlong, Cosme; Fischer, Gregory S.

    2013-01-01

    Robot-assisted surgical procedures, taking advantage of the high soft tissue contrast and real-time imaging of magnetic resonance imaging (MRI), are developing rapidly. However, it is crucial to maintain tactile force feedback in MRI-guided needle-based procedures. This paper presents a Fabry-Perot interference (FPI) based system of an MRI-compatible fiber optic sensor which has been integrated into a piezoelectrically actuated robot for prostate cancer biopsy and brachytherapy in 3T MRI scan...

  13. Response of a New Low-Coherence Fabry-Perot Sensor to Hematocrit Levels in Human Blood

    Directory of Open Access Journals (Sweden)

    Małgorzata Jędrzejewska-Szczerska

    2014-04-01

    Full Text Available In this paper, a low-coherence Fabry-Perot sensor with a spectrally measured signal processing response to the refractive index of liquids is presented. Optical fiber sensors are potentially capable of continuous measuring hematocrit levels in blood. Low-coherence Fabry-Perot interferometric sensors offer a robust solution, where information about the measurand is encoded in the full spectrum of light reflected from the sensing interferometer. The first step in the research on such sensor is the assessment of its performance under favorable conditions, i.e., using blood samples from healthy volunteers tested in vitro. Such an experiment was conducted using a sensor comprising a superluminescent diode source, an optical spectrum analyzer working as the detection setup and a sensing Fabry-Perot interferometer providing high interference contrast. The response of this sensor was recorded for several samples and compared with the reference laboratory method. The coefficient of determination (R2 for a linear relationship between the results given by both methods was 0.978 and the difference between these results was less than 1%. The presented results suggest that further research into the performance of the sensor is merited.

  14. Ultrafast Fabry-Perot fiber-optic pressure sensors for multimedia blast event measurements.

    Science.gov (United States)

    Zou, Xiaotian; Wu, Nan; Tian, Ye; Zhang, Yang; Fitek, John; Maffeo, Michael; Niezrecki, Christopher; Chen, Julie; Wang, Xingwei

    2013-02-20

    A shock wave (SW) is characterized as a large pressure fluctuation that typically lasts only a few milliseconds. On the battlefield, SWs pose a serious threat to soldiers who are exposed to explosions, which may lead to blast-induced traumatic brain injuries. SWs can also be used beneficially and have been applied to a variety of medical treatments due to their unique interaction with tissues and cells. Consequently, it is important to have sensors that can quantify SW dynamics in order to better understand the physical interaction between body tissue and the incident acoustic wave. In this paper, the ultrafast fiber-optic sensor based on the Fabry-Perot interferometric principle was designed and four such sensors were fabricated to quantify a blast event within different media, simultaneously. The compact design of the fiber-optic sensor allows for a high degree of spatial resolution when capturing the wavefront of the traveling SW. Several blast event experiments were conducted within different media (e.g., air, rubber membrane, and water) to evaluate the sensor's performance. This research revealed valuable knowledge for further study of SW behavior and SW-related applications.

  15. Development of a Fabry-Perot cavity for the Compton polarimetry

    International Nuclear Information System (INIS)

    Jorda, Jean-Paul

    1997-01-01

    A quick, precise and non-destructive longitudinal polarisation measurement should be a great advantage for the HAPPEX experiment at CEBAF (Jefferson Lab, USA). To achieve this, it could be possible to use a Fabry-Perot cavity to get a high photon flux at the electron-photon interaction point of a Compton polarimeter. This thesis is a first study for the design of such a system. We have shown that a 'monolithic' cavity, i.e. with mirrors mounted on fixed stage, is a good solution. My contribution for these studies is the development of a code to compute the optimum geometry of a cavity. Another of my contribution concerns the test of a cavity based on commercial mirrors with a gain > 160, using the Pound-Drever method to lock the laser frequency. My studies concern optical matching between the laser beam and the cavity, the choice of the frequency of modulation for the feed-back system and the characterization of the intracavity power. This work is a first step of the studies which will lead to the integration of a cavity based system on the CEBAF beam line. (author) [fr

  16. Microbubble-based fiber-optic Fabry-Perot pressure sensor for high-temperature application.

    Science.gov (United States)

    Li, Zhe; Jia, Pinggang; Fang, Guocheng; Liang, Hao; Liang, Ting; Liu, Wenyi; Xiong, Jijun

    2018-03-10

    Using arc discharge technology, we fabricated a fiber-optic Fabry-Perot (FP) pressure sensor with a very low temperature coefficient based on a microbubble that can be applied in a high-temperature environment. The thin-walled microbubble can be fabricated by heating the gas-pressurized hollow silica tube (HST) using a commercial fusion splicer. Then, the well-cut single-mode fiber (SMF) was inserted into the microbubble, and they were fused together. Thus, the FP cavity can be formed between the end of the SMF and the inner surface of the microbubble. The diameter of the microbubble can be up to 360 μm with the thickness of the wall being approximately 0.5 μm. Experimental results show that such a sensor has a linear sensitivity of approximately -6.382  nm/MPa, -5.912  nm/MPa at 20°C, and 600°C within the pressure range of 1 MPa. Due to the thermal expansion coefficient of the SMF being slightly larger than that of silica, we can fuse the SMF and the HST with different lengths; thus, the sensor has a very low temperature coefficient of approximately 0.17 pm/°C.

  17. Tapered optical fiber tip probes based on focused ion beam-milled Fabry-Perot microcavities

    Science.gov (United States)

    André, Ricardo M.; Warren-Smith, Stephen C.; Becker, Martin; Dellith, Jan; Rothhardt, Manfred; Zibaii, M. I.; Latifi, H.; Marques, Manuel B.; Bartelt, Hartmut; Frazão, Orlando

    2016-09-01

    Focused ion beam technology is combined with dynamic chemical etching to create microcavities in tapered optical fiber tips, resulting in fiber probes for temperature and refractive index sensing. Dynamic chemical etching uses hydrofluoric acid and a syringe pump to etch standard optical fibers into cone structures called tapered fiber tips where the length, shape, and cone angle can be precisely controlled. On these tips, focused ion beam is used to mill several different types of Fabry-Perot microcavities. Two main cavity types are initially compared and then combined to form a third, complex cavity structure. In the first case, a gap is milled on the tapered fiber tip which allows the external medium to penetrate the light guiding region and thus presents sensitivity to external refractive index changes. In the second, two slots that function as mirrors are milled on the tip creating a silica cavity that is only sensitive to temperature changes. Finally, both cavities are combined on a single tapered fiber tip, resulting in a multi-cavity structure capable of discriminating between temperature and refractive index variations. This dual characterization is performed with the aid of a fast Fourier transform method to separate the contributions of each cavity and thus of temperature and refractive index. Ultimately, a tapered optical fiber tip probe with sub-standard dimensions containing a multi-cavity structure is projected, fabricated, characterized and applied as a sensing element for simultaneous temperature and refractive index discrimination.

  18. MEMS fiber-optic Fabry-Perot pressure sensor for high temperature application

    Science.gov (United States)

    Fang, G. C.; Jia, P. G.; Cao, Q.; Xiong, J. J.

    2016-10-01

    We design and demonstrate a fiber-optic Fabry-Perot pressure sensor (FOFPPS) for high-temperature sensing by employing micro-electro-mechanical system (MEMS) technology. The FOFPPS is fabricated by anodically bonding the silicon wafer and the Pyrex glass together and fixing the facet of the optical fiber in parallel with the silicon surface by glass frit and organic adhesive. The silicon wafer can be reduced through dry etching technology to construct the sensitive diaphragm. The length of the cavity changes with the deformation of the diaphragm due to the loaded pressure, which leads to a wavelength shift of the interference spectrum. The pressure can be gauged by measuring the wavelength shift. The pressure experimental results show that the sensor has linear pressure sensitivities ranging from 0 kPa to 600 kPa at temperature range between 20°C to 300°C. The pressure sensitivity at 300°C is approximately 27.63 pm/kPa. The pressure sensitivities gradually decrease with increasing the temperature. The sensor also has a linear thermal drift when temperature changes from 20°C - 300°C.

  19. High-energy localized eigenstates in a Fabry-Perot graphene resonator in a magnetic field

    Science.gov (United States)

    Zalipaev, V. V.

    2012-06-01

    A semiclassical analysis of the high-energy eigenstates of Dirac fermions inside a graphene monolayer nanoribbon resonator of Fabry-Perot type in a magnetic field with zigzag boundary conditions is discussed. A semiclassical asymptotic method of construction of Maslov spectral series of energy spectrum and eigenfunctions, localized in an asymptotically small neighborhood of a periodic orbit, is developed for the graphene Dirac system. The isolated periodic orbit is confined between two flat boundaries. The analysis involves constructing a localized asymptotic solution to the Dirac system (electron-hole Gaussian beam). Then, the stability of a continuous family of periodic orbits (POs) confined between reflecting boundaries of the resonator is studied. The asymptotics of the eigenfunctions are constructed as a superposition of two Gaussian beams propagating in opposite directions between two reflecting points of the periodic orbit. The asymptotics of the energy spectrum are obtained by means of the generalized Bohr-Sommerfeld quantization condition only for stable POs. It provides two parts of semiclassical Maslov spectral series with positive and negative energies, for electrons and holes, correspondingly, with two different Hamiltonian dynamics and families of classical trajectories. The presence of electrostatic potential is vital as it makes a family of periodic orbit stable. For one subclass of lens-shaped periodic orbits, for a piecewise linear potential, localized eigenstates were computed numerically by the finite element method using COMSOL, and proved to be in very good agreement with the ones computed semiclassically.

  20. The Gain Estimation of a Fabry-Perot Cavity (FPC Antenna with a Finite Dimension

    Directory of Open Access Journals (Sweden)

    Taek-Sun Kwon

    2017-10-01

    Full Text Available In this paper, we have presented an equation for estimating the gain of a Fabry-Perot cavity (FPC antenna with a finite dimension. When an FPC antenna has an infinite dimension and its height is half of a wavelength, the maximum gain of that FPC antenna can be obtained theoretically. If the FPC antenna does not have a dimension sufficient for multiple reflections between a partially reflective surface (PRS and the ground, its gain must be less than that of an FPC antenna that has an infinite dimension. In addition, the gain of an FPC antenna increases as the dimension of a PRS increases and becomes saturated from a specific dimension. The specific dimension where the gain starts to saturate also gets larger as the reflection magnitude of the PRS becomes closer to one. Thus, it would be convenient to have a gain equation when considering the dimension of an FPC antenna in order to estimate the exact gain of the FPC antenna with a specific dimension. A gain versus the dimension of the FPC antenna for various reflection magnitudes of PRS has been simulated, and the modified gain equation is produced through the curve fitting of the full-wave simulation results. The resulting empirical gain equation of an FPC antenna whose PRS dimension is larger than 1.5λ0 has been obtained.

  1. Nonlinear estimation of ring-down time for a Fabry-Perot optical cavity.

    Science.gov (United States)

    Kallapur, Abhijit G; Boyson, Toby K; Petersen, Ian R; Harb, Charles C

    2011-03-28

    This paper discusses the application of a discrete-time extended Kalman filter (EKF) to the problem of estimating the decay time constant for a Fabry-Perot optical cavity for cavity ring-down spectroscopy (CRDS). The data for the estimation process is obtained from a CRDS experimental setup in terms of the light intensity at the output of the cavity. The cavity is held in lock with the input laser frequency by controlling the distance between the mirrors within the cavity by means of a proportional-integral (PI) controller. The cavity is purged with nitrogen and placed under vacuum before chopping the incident light at 25 KHz and recording the light intensity at its output. In spite of beginning the EKF estimation process with uncertainties in the initial value for the decay time constant, its estimates converge well within a small neighborhood of the expected value for the decay time constant of the cavity within a few ring-down cycles. Also, the EKF estimation results for the decay time constant are compared to those obtained using the Levenberg-Marquardt estimation scheme.

  2. Performance Evaluation of Fabry-Perot Temperature Sensors in Nuclear Power Plant Measurements

    International Nuclear Information System (INIS)

    Liu Hanying; Miller, Don W.; Talnagi, Joseph W.

    2003-01-01

    The Fiso Fabry-Perot fiber-optic temperature sensor was selected for performance evaluation and for potential application in nuclear power plants because of its unique interferometric sensing mechanism and data-processing technique, and its commercial availability. It employs a Fizeau interferometer and a charge-coupled device array to locate the position of the maximum interference fringe intensity, which is directly related to the environmental temperature. Consequently, the basic sensing mechanism is independent of the absolute transmitted light intensity, which is the most likely parameter to be affected by external harsh environments such as nuclear irradiation, high pressure/temperature, and cyclical vibration.This paper reports research on the performance of two Fiso Fabry-Perot temperature sensors in environmental conditions expected in nuclear power plants during both normal and abnormal (i.e., accident) conditions. The environmental conditions simulated in this paper include gamma-only ( 60 Co) irradiation, pressure/temperature environmental transient, and mixed neutron/gamma field, respectively.The first sensor exhibited no failure or degradation in performance during and following gamma-only irradiation in which a total dose of 15 kGy was delivered at a dose rate of 2.5 kGy/h. Following gamma irradiation, this sensor was then tested for 10.75 days in a thermohydraulic environment prescribed by the Institute of Electrical and Electronics Engineers IEEE323-1983. Intermittent behavior was observed throughout the latter portions of this test, and degradation in performance occurred after the test. Visual evaluation after opening the sensor head indicated that the internal welding methodology was the primary contributor to the observed behavior during this test. Further consultation with the vendor shows that the robustness and reliability of Fiso sensors can be substantially improved by modifying the internal welding methods.The second Fiso temperature

  3. Investigation of mode partition noise in Fabry-Perot laser diode

    Science.gov (United States)

    Guo, Qingyi; Deng, Lanxin; Mu, Jianwei; Li, Xun; Huang, Wei-Ping

    2014-09-01

    Passive optical network (PON) is considered as the most appealing access network architecture in terms of cost-effectiveness, bandwidth management flexibility, scalability and durability. And to further reduce the cost per subscriber, a Fabry-Perot (FP) laser diode is preferred as the transmitter at the optical network units (ONUs) because of its lower cost compared to distributed feedback (DFB) laser diode. However, the mode partition noise (MPN) associated with the multi-longitudinal-mode FP laser diode becomes the limiting factor in the network. This paper studies the MPN characteristics of the FP laser diode using the time-domain simulation of noise-driven multi-mode laser rate equation. The probability density functions are calculated for each longitudinal mode. The paper focuses on the investigation of the k-factor, which is a simple yet important measure of the noise power, but is usually taken as a fitted or assumed value in the penalty calculations. In this paper, the sources of the k-factor are studied with simulation, including the intrinsic source of the laser Langevin noise, and the extrinsic source of the bit pattern. The photon waveforms are shown under four simulation conditions for regular or random bit pattern, and with or without Langevin noise. The k-factors contributed by those sources are studied with a variety of bias current and modulation current. Simulation results are illustrated in figures, and show that the contribution of Langevin noise to the k-factor is larger than that of the random bit pattern, and is more dominant at lower bias current or higher modulation current.

  4. Micro-Mechanical Voltage Tunable Fabry-Perot Filters Formed in (111) Silicon. Degree awarded by Colorado Univ., Boulder, CO

    Science.gov (United States)

    Patterson, James D.

    1997-01-01

    The MEMS (Micro-Electro-Mechanical-Systems) technology is quickly evolving as a viable means to combine micro-mechanical and micro-optical elements on the same chip. One MEMS technology that has recently gained attention by the research community is the micro-mechanical Fabry-Perot optical filter. A MEMS based Fabry-Perot consists of a vertically integrated structure composed of two mirrors separated by an air gap. Wavelength tuning is achieved by applying a bias between the two mirrors resulting in an attractive electrostatic force which pulls the mirrors closer. In this work, we present a new micro-mechanical Fabry-Perot structure which is simple to fabricate and is integratable with low cost silicon photodetectors and transistors. The structure consists of a movable gold coated oxide cantilever for the top mirror and a stationary Au/Ni plated silicon bottom mirror. The fabrication process is single mask level, self aligned, and requires only one grown or deposited layer. Undercutting of the oxide cantilever is carried out by a combination of RIE and anisotropic KOH etching of the (111) silicon substrate. Metallization of the mirrors is provided by thermal evaporation and electroplating. The optical and electrical characteristics of the fabricated devices were studied and show promissing results. A wavelength shift of 120nm with 53V applied bias was demonstrated by one device geometry using 6.27 micrometer air gap. The finesse of the structure was 2.4. Modulation bandwidths ranging from 91KHz to greater than 920KHz were also observed. Theoretical calculations show that if mirror reflectivity, smoothness, and parallelism are improved, a finesse of 30 is attainable. The predictions also suggest that a reduction of the air gap to 1 micrometer results in an increased wavelength tuning range of 175 nm with a CMOS compatible 4.75V.

  5. Development of Silicon-substrate Based Fabry-Perot Etalons for far-IR Astrophysics

    Science.gov (United States)

    Stacey, Gordon

    We propose to design, construct and test silicon-substrate-based (SSB) mirrors necessary for high performance Fabry-Perot interferometers (FPIs) to be used in the 25-40 um mid-IR band. These mirrors will be fabricated from silicon wafers that are anti-reflection coated (ARC) by micromachining an artificial dielectric meta-material on one side, and depositing optimized gold-metalized patterns on the other. Two mirrors with the metalized surfaces facing one-another form the Fabry-Perot cavity, also known as the FPI etalon. The exterior surfaces of the silicon mirrors are anti-reflection coated for both good transmission in the science band, and to prevent unwanted parasitic FPI cavities from forming between the four surfaces (one anti-reflection coated, one metalized for each mirror) of the FPI etalon. The mirrors will be tested within a Miniature Cryogenic Scanning Fabry-Perot (MCSF) that we have designed through support of a previous NASA grant (NNX09AB95G). This design is based on our long experience in constructing and using scanning FPI in the mid-IR to submm range, and fits within test-beds we have on hand that are suitable for both warm and cold tests. The key technologies are the ARC and tuned mirrors that are enabled by silicon nano-machining techniques. The creation of these SSB mirrors promises greatly improved performance over previous versions of mid-IR to submm-band FPIs that are based on mirrors made from free-standing metal mesh stretched over support rings. Performance is improved both structurally and in terms of sensitivity, and is measured as the product of the cavity finesse times transmission. Our electromagnetic modeling suggests that SSB mirrors will improve this product by a factor of 2 over the best free standing mesh etalons available. This translates into a factor of sqrt(2) improvement in sensitivity per etalon, or a full factor of 2 when used in a tandem (dual etalon) FPI spectrometer. The SSB improvements are due to both the stiff (~ 0

  6. Nanoporous Zeolite Thin Film-Based Fiber Intrinsic Fabry-Perot Interferometric Sensor for Detection of Dissolved Organics in Water

    Directory of Open Access Journals (Sweden)

    Hai Xiao

    2006-08-01

    Full Text Available A fiber optic intrinsic Fabry-Perot interferometric (IFPI chemical sensor wasdeveloped by fine-polishing a thin layer of polycrystalline nanoporous MFI zeolitesynthesized on the cleaved endface of a single mode fiber. The sensor operated bymonitoring the optical thickness changes of the zeolite thin film caused by the adsorption oforganic molecules into the zeolite channels. The optical thickness of the zeolite thin filmwas measured by white light interferometry. Using methanol, 2-propanol, and toluene as themodel chemicals, it was demonstrated that the zeolite IPFI sensor could detect dissolvedorganics in water with high sensitivity.

  7. Picometre displacement measurements using a differential Fabry-Perot optical interferometer and an x-ray interferometer

    Science.gov (United States)

    Çelik, Mehmet; Hamid, Ramiz; Kuetgens, Ulrich; Yacoot, Andrew

    2012-08-01

    X-ray interferometry is emerging as an important tool for dimensional nanometrology both for sub-nanometre measurement and displacement. It has been used to verify the performance of the next generation of displacement measuring optical interferometers within the European Metrology Research Programme project NANOTRACE. Within this project a more detailed set of comparison measurements between the x-ray interferometer and a dual channel Fabry-Perot optical interferometer (DFPI) have been made to demonstrate the capabilities of both instruments for picometre displacement metrology. The results show good agreement between the two instruments, although some minor differences of less than 5 pm have been observed.

  8. Fabry-Perot interferometer fiber tip sensor based on a glass microsphere glued at the etched end of multimode fiber

    Science.gov (United States)

    Chen, Weiping P.; Wang, Dongning N.; Xu, Ben; Wang, Zhaokun K.; Zhao, Chun-Liu

    2017-05-01

    We demonstrate an optical Fabry-Perot interferometer fiber tip sensor based on a glass microsphere glued at the etched end of a multimode fiber. The fiber device is miniature and robust, with a convenient reflection mode of operation, a high temperature sensitivity of 202.6 pm/°C within the range from 5°C to 90°C, a good refractive index sensitivity of ˜119 nm/RIU within the range from 1.331 to 1.38, and a gas pressure sensitivity of 0.19 dB/MPa.

  9. Dual-wavelength erbium-doped fiber laser with asymmetric fiber Bragg grating Fabry-Perot cavity

    Science.gov (United States)

    Chen, Cong; Xu, Zhi-wei; Wang, Meng; Chen, Hai-yan

    2014-11-01

    A novel dual-wavelength fiber laser with asymmetric fiber Bragg grating (FBG) Fabry-Perot (FP) cavity is proposed and experimentally demonstrated. A couple of uniform FBGs are used as the cavity mirrors, and the third FBG is used as intracavity wavelength selector by changing its operation temperature. Experimental results show that by adjusting the operation temperature of the intracavity wavelength selector, a tunable dual-wavelength laser emission can be achieved. The results demonstrate the new concept of dual-wavelength lasing with asymmetric FBG FP resonator and its technical feasibility.

  10. Fabry-Perot interferometer measurements of neutral winds and F2 layer variations at the magnetic equator

    Directory of Open Access Journals (Sweden)

    P. Vila

    1998-06-01

    Full Text Available This letter presents some night-time observations of neutral wind variations at F2 layer levels near the dip equator, measured by the Fabry-Perot interferometer set up in 1994 at Korhogo (Ivory Coast, geographic latitude 9.25°N, longitude 355°E, dip latitude –2.5°. Our instrument uses the 630 nm (O1D line to determine radial Doppler velocities of the oxygen atoms between 200 and 400 km altitude. First results for November 1994 to March 1995 reveal persistent eastward flows, and frequent intervals of southward winds of larger than 50 ms–1 velocity. Compared with the simultaneous ionospheric patterns deduced from the three West African equatorial ionosondes at Korhogo, Ouagadougou (Burkina-Faso, dip latitude +1.5° and Dakar (Sénégal, dip latitude +5°, they illustrate various impacts of the thermospheric winds on F2 layer density: (1 on the mesoscale evolution (a few 103 km and a few 100 minutes scales and (2 on local fluctuations (hundreds of km and tens of minutes characteristic times. We report on these fluctuations and discuss the opportunity to improve the time-resolution of the Fabry-Perot interferometer at Korhogo.Key words. Ionosphere (Equatorial ionosphere; Ionosphere-atmosphere interaction · Meteorology and Atmospheric Dynamics (General circulation

  11. Optical filter based on Fabry-Perot structure using a suspension of goethite nanoparticles as electro-optic material

    Science.gov (United States)

    Abbas, Samir; Dupont, Laurent; Dozov, Ivan; Davidson, Patrick; Chanéac, Corinne

    2018-02-01

    We have investigated the feasibility of optical tunable filters based on a Fabry-Perot etalon that uses a suspension of goethite (α-FeOOH) nanorods as electro-optic material for application in optical telecommunications in the near IR range. These synthetic nanoparticles have a high optical anisotropy that give rise to a very strong Kerr effect in their colloidal suspensions. Currently, these particles are dispersed in aqueous solvent, with pH2 to ensure the colloidal electrostatic stability. However, the high conductivity of these suspensions requires using high-frequency electric fields (f > 1 MHz), which brings about a high power consumption of the driver. To decrease the field frequency, we have changed the solvent to ethylene glycol which has a lower electrical conductivity than the aqueous solvent. We have built a Fabry-Perot cell, filled with this colloidal suspension in the isotropic phase, and showed that a phase shift of 14 nm can be obtained in a field of 3V/μm. Therefore, the device can operate as a tunable filter. A key advantage of this filter is that it is, by principle, completely insensitive to the polarization of the input light. However, several technological issues still need to be solved, such as ionic contamination of the suspension from the blocking layers, and dielectrophoretic and thermal effects.

  12. Designing, Probing, and Stabilizing Exotic Fabry-Perot Cavities for Studying Strongly Correlated Light

    Science.gov (United States)

    Ryou, Albert

    Synthetic materials made of engineered quasiparticles are a powerful platform for studying manybody physics and strongly correlated systems due to their bottom-up approach to Hamiltonian modeling. Photonic quasiparticles called polaritons are particularly appealing since they inherit fast dynamics from light and strong interaction from matter. This thesis describes the experimental demonstration of cavity Rydberg polaritons, which are composite particles arising from the hybridization of an optical cavity with Rydberg EIT, as well as the tools for probing and stabilizing the cavity. We first describe the design, construction, and testing of a four-mirror Fabry-Perot cavity, whose small waist size on the order of 10 microns is comparable to the Rydberg blockade radius. By achieving strong coupling between the cavity photon and an atomic ensemble undergoing electromagnetically induced transparency (EIT), we observe the emergence of the dark-state polariton and characterize its single-body properties as well as the single-quantum nonlinearity. We then describe the implementation of a holographic spatial light modulator for exciting different transverse modes of the cavity, an essential tool for studying polariton-polariton scattering. For compensating optical aberrations, we employ a digital micromirror device (DMD), combining beam shaping with adaptive optics to produce diffraction-limited light. We quantitatively measure the purity of the DMD-produced Hermite-Gauss modes and confirm up to 99.2% efficiency. One application of the technique is to create Laguerre-Gauss modes, which have been used to probe synthetic Landau levels for photons in a twisted, nonplanar cavity. Finally, we describe the implementation of an FPGA-based FIR filter for stabilizing the cavity. We digitally cancel the acoustical resonances of the feedback-controlled mechanical system, thereby demonstrating an order-of-magnitude enhancement in the feedback bandwidth from 200 Hz to more than 2 k

  13. Optimal Design of an Hourglass in-Fiber Air Fabry-Perot Microcavity—Towards Spectral Characteristics and Strain Sensing Technology

    Directory of Open Access Journals (Sweden)

    Qi Wang

    2017-06-01

    Full Text Available An hourglass in-fiber air microcavity Fabry-Perot interferometer is proposed in this paper, and its second reflecting surface of in-fiber microcavity is designed to be a concave reflector with the best curvature radius in order to improve the spectral characteristics. Experimental results proved that the extinction ratio of Fabry-Perot interferometer with cavity length of 60 μm and concave reflector radius of 60 μm is higher than for a rectangular Fabry-Perot interferometer with cavity length of 60 μm (14 dB: 11 dB. Theory and numerical simulation results show that the strain sensitivity of sensor can be improved by reducing the microcavity wall thickness and microcavity diameter, and when the in-fiber microcavity length is 40 μm, the microcavity wall thickness is 10 μm, the microcavity diameter is 20 μm, and the curvature radius of reflective surface II is 50 μm, the interference fringe contrast of is greater than 0.97, an Axial-pull sensitivity of 20.46 nm/N and resolution of 1 mN can be achieved in the range of 0–1 N axial tension. The results show that the performance of hourglass in-fiber microcavity interferometer is far superior to that of the traditional Fabry-Perot interferometer.

  14. Theoretical and experimental study of low-finesse extrinsic Fabry-Perot interferometric fiber optic sensors

    Science.gov (United States)

    Han, Ming

    In this dissertation, detailed and systematic theoretical and experimental study of low-finesse extrinsic Fabry-Perot interferometric (EFPI) fiber optic sensors together with their signal processing methods for white-light systems are presented. The work aims to provide a better understanding of the operational principle of EFPI fiber optic sensors, and is useful and important in the design, optimization, fabrication and application of single mode fiber(SMF) EFPI (SMF-EFPI) and multimode fiber (MMF) EFPI (MMF-EFPI) sensor systems. The cases for SMF-EFPI and MMF-EFPI sensors are separately considered. In the analysis of SMF-EFPI sensors, the light transmitted in the fiber is approximated by a Gaussian beam and the obtained spectral transfer function of the sensors includes an extra phase shift due to the light coupling in the fiber end-face. This extra phase shift has not been addressed by previous researchers and is of great importance for high accuracy and high resolution signal processing of white-light SMF-EFPI systems. Fringe visibility degradation due to gap-length increase and sensor imperfections is studied. The results indicate that the fringe visibility of a SMF-EFPI sensor is relatively insensitive to the gap-length change and sensor imperfections. Based on the spectral fringe pattern predicated by the theory of SMF-EFPI sensors, a novel curve fitting signal processing method (Type 1 curve-fitting method) is presented for white-light SMF-EFPI sensor systems. Other spectral domain signal processing methods including the wavelength-tracking, the Type 2-3 curve fitting, Fourier transform, and two-point interrogation methods are reviewed and systematically analyzed. Experiments were carried out to compare the performances of these signal processing methods. The results have shown that the Type 1 curve fitting method achieves high accuracy, high resolution, large dynamic range, and the capability of absolute measurement at the same time, while others either

  15. A THz plasmonics perfect absorber and Fabry-Perot cavity mechanism (Conference Presentation)

    Science.gov (United States)

    Zhou, Jiangfeng; Bhattarai, Khagendra; Silva, Sinhara; Jeon, Jiyeon; Kim, Junoh; Lee, Sang Jun; Ku, Zahyun

    2016-10-01

    The plasmonic metamaterial perfect absorber (MPA) is a recently developed branch of metamaterial which exhibits nearly unity absorption within certain frequency range.[1-6] The optically thin MPA possesses characteristic features of angular-independence, high Q-factor and strong field localization that have inspired a wide range of applications including electromagnetic wave absorption,[3, 7, 8] spatial[6] and spectral[5] modulation of light,[9] selective thermal emission,[9] thermal detecting[10] and refractive index sensing for gas[11] and liquid[12, 13] targets. In this work, we demonstrate a MPA working at terahertz (THz) regime and characterize it using an ultrafast THz time-domain spectroscopy (THz-TDS). Our study reveal an ultra-thin Fabry-Perot cavity mechanism compared to the impedance matching mechanism widely adopted in previous study [1-6]. Our results also shows higher-order resonances when the cavities length increases. These higher order modes exhibits much larger Q-factor that can benefit potential sensing and imaging applications. [1] C. M. Watts, X. L. Liu, and W. J. Padilla, "Metamaterial Electromagnetic Wave Absorbers," Advanced Materials, vol. 24, pp. 98-120, Jun 19 2012. [2] M. Hedayati, F. Faupel, and M. Elbahri, "Review of Plasmonic Nanocomposite Metamaterial Absorber," Materials, vol. 7, pp. 1221-1248, 2014. [3] N. I. Landy, S. Sajuyigbe, J. J. Mock, D. R. Smith, and W. J. Padilla, "Perfect metamaterial absorber," Physical Review Letters, vol. 100, p. 207402, May 23 2008. [4] H. R. Seren, G. R. Keiser, L. Cao, J. Zhang, A. C. Strikwerda, K. Fan, et al., "Optically Modulated Multiband Terahertz Perfect Absorber," Advanced Optical Materials, vol. 2, pp. 1221-1226, 2014. [5] D. Shrekenhamer, J. Montoya, S. Krishna, and W. J. Padilla, "Four-Color Metamaterial Absorber THz Spatial Light Modulator," Advanced Optical Materials, vol. 1, pp. 905-909, 2013. [6] S. Savo, D. Shrekenhamer, and W. J. Padilla, "Liquid Crystal Metamaterial Absorber Spatial

  16. A preliminary study of thermosphere and mesosphere wind observed by Fabry-Perot over Kelan, China

    Science.gov (United States)

    Yu, Tao; Huang, Cong; Zhao, Guangxin; Mao, Tian; Wang, Yungang; Zeng, Zhongcao; Wang, Jingsong; Xia, Chunliang

    2014-06-01

    A Fabry-Perot interferometer (FPI) system was deployed in Kelan (38.7°N, 111.6°E), center China in November 2011, which observes the airglows at wavelengths of 892.0 nm, 557.7 nm, and 630.0 nm from OH and OI emissions in the upper atmosphere, to derive the wind and temperature at heights around 87 km, 97 km, and 250 km, respectively. From late 2011 through 2013 a series of more than 4500 measurements at each height are validated according to manufacture data quality criteria. By using these data, the morphology of wind in the mesosphere and thermosphere is investigated in this study. Preliminary results are as follows: (1) As for the diurnal variation, meridional and zonal winds at heights of 87 km and 97 km, which are derived through 892.0 nm and 557.7 nm airglows, usually range from -50 m/s to 30 m/s and -50 m/s to 50 m/s, respectively, with typical random errors of about 6-10 m/s at 87 km and 2-3 m/s at 97 km. Meridional winds usually are northward at dusk, southward at middle night, and back to northward at dawn; and zonal winds usually are eastward at dusk, westward at middle night, and back to eastward at dawn. The monthly mean winds are in good agreement with those of HWM93 results. Meridional and zonal winds at a height of 250 km, which are derived through 630.0 nm nightglow, range from -110 m/s to 80 m/s with typical random errors of about 8-10 m/s. Meridional winds usually are northward at dusk, southward at middle night, and back to northward at dawn; and zonal winds usually are eastward at dusk, zero at middle night, and westward at dawn; and they are also well consistent with HWM93 results. (2) As for the seasonal variation, meridional winds at the heights of 87 km and 97 km have a visible annual variation at 12-17 LT and with a little semiannual variation at all other hours, but the zonal winds at the heights of 87 km and 97 km have a semiannual variation all night. The seasonal dependence of the winds, both meridional and zonal winds, at the height

  17. MEMS Fabry-Perot sensor interrogated by optical system-on-a-chip for simultaneous pressure and temperature sensing.

    Science.gov (United States)

    Pang, Cheng; Bae, Hyungdae; Gupta, Ashwani; Bryden, Kenneth; Yu, Miao

    2013-09-23

    We present a micro-electro-mechanical systems (MEMS) based Fabry-Perot (FP) sensor along with an optical system-on-a-chip (SOC) interrogator for simultaneous pressure and temperature sensing. The sensor employs a simple structure with an air-backed silicon membrane cross-axially bonded to a 45° polished optical fiber. This structure renders two cascaded FP cavities, enabling simultaneous pressure and temperature sensing in close proximity along the optical axis. The optical SOC consists of a broadband source, a MEMS FP tunable filter, a photodetector, and the supporting circuitry, serving as a miniature spectrometer for retrieving the two FP cavity lengths. Within the measured pressure and temperature ranges, experimental results demonstrate that the sensor exhibits a good linear response to external pressure and temperature changes.

  18. UW Imaging of Seismic-Physical-Models in Air Using Fiber-Optic Fabry-Perot Interferometer.

    Science.gov (United States)

    Rong, Qiangzhou; Hao, Yongxin; Zhou, Ruixiang; Yin, Xunli; Shao, Zhihua; Liang, Lei; Qiao, Xueguang

    2017-02-17

    A fiber-optic Fabry-Perot interferometer (FPI) has been proposed and demonstrated for the ultrasound wave (UW) imaging of seismic-physical models. The sensor probe comprises a single mode fiber (SMF) that is inserted into a ceramic tube terminated by an ultra-thin gold film. The probe performs with an excellent UW sensitivity thanks to the nanolayer gold film, and thus is capable of detecting a weak UW in air medium. Furthermore, the compact sensor is a symmetrical structure so that it presents a good directionality in the UW detection. The spectral band-side filter technique is used for UW interrogation. After scanning the models using the sensing probe in air, the two-dimensional (2D) images of four physical models are reconstructed.

  19. Mirror Birefringence in a Fabry-Perot Cavity and the Detection of Vacuum Birefringence in a Magnetic Field

    Science.gov (United States)

    Chui, T. C. P.; Shao, M.; Redding, D.; Gursel, Y.; Boden, A.

    1995-01-01

    We discuss the effect of mirror birefringence in two optical schemes designed to detect the quantum-electrodynamics (QED) predictions of vacuum birefringence under the influence of a strong magnetic field, B. Both schemes make use of a high finesse Fabry-Perot cavity (F-P) to increase the average path length of the light in the magnetic field. The first scheme, which we called the frequency scheme, is based on measurement of the beat frequency of two orthogonal polarized laser beams in the cavity. We show that mirror birefringence contributes to the detection uncertainties in first order, resulting in a high susceptibility to small thermal disturbances. We estimate that an unreasonably high thermal stability of 10-9 K is required to resolve the effect to 0.1%. In the second scheme, which we called the polarization rotation scheme, laser polarized at 45 relative to the B field is injected into the cavity.

  20. Parallelised photoacoustic signal acquisition using a Fabry-Perot sensor and a camera-based interrogation scheme

    Science.gov (United States)

    Saeb Gilani, T.; Villringer, C.; Zhang, E.; Gundlach, H.; Buchmann, J.; Schrader, S.; Laufer, J.

    2018-02-01

    Tomographic photoacoustic (PA) images acquired using a Fabry-Perot (FP) based scanner offer high resolution and image fidelity but can result in long acquisition times due to the need for raster scanning. To reduce the acquisition times, a parallelised camera-based PA signal detection scheme is developed. The scheme is based on using a sCMOScamera and FPI sensors with high homogeneity of optical thickness. PA signals were acquired using the camera-based setup and the signal to noise ratio (SNR) was measured. A comparison of the SNR of PA signal detected using 1) a photodiode in a conventional raster scanning detection scheme and 2) a sCMOS camera in parallelised detection scheme is made. The results show that the parallelised interrogation scheme has the potential to provide high speed PA imaging.

  1. Extrinsic optical-fiber ultrasound sensor using a thin polymer film as a low-finesse Fabry-Perot interferometer

    Science.gov (United States)

    Beard, P. C.; Mills, T. N.

    1996-02-01

    Theoretical and experimental aspects of an extrinsic optical-fiber ultrasound sensor are described. The sensor is based on a thin transparent polymer film acting as a low-finesse Fabry-Perot cavity that is mounted at the end of a multimode optical fiber. Performance was found to be comparable with that of a piezoelectric polyvinylidene difluoride-membrane (PVDF) hydrophone with a sensitivity of 61 mV/MPa, an acoustic noise floor of 2.3 KPa over a 25-MHz bandwidth, and a frequency response to 25 MHz. The wideband-sensitive response and design flexibility of the concept suggests that it may find application as an alternative to piezoelectric devices for the detection and measurement of ultrasound.

  2. Non-destructive residual pressure self-measurement method for the sensing chip of optical Fabry-Perot pressure sensor.

    Science.gov (United States)

    Wang, Xue; Wang, Shuang; Jiang, Junfeng; Liu, Kun; Zhang, Xuezhi; Xiao, Mengnan; Xiao, Hai; Liu, Tiegen

    2017-12-11

    We introduce a simple residual pressure self-measurement method for the Fabry-Perot (F-P) cavity of optical MEMS pressure sensor. No extra installation is required and the structure of the sensor is unchanged. In the method, the relationship between residual pressure and external pressure under the same diaphragm deflection condition at different temperatures is analyzed by using the deflection formula of the circular plate with clamped edges and the ideal gas law. Based on this, the residual pressure under the flat condition can be obtained by pressure scanning process and calculation process. We carried out the experiment to compare the residual pressures of two batches MEMS sensors fabricated by two kinds of bonding process. The measurement result indicates that our approach is reliable enough for the measurement.

  3. Impact of mode partition noise in free-running gain-switched Fabry-Perot laser for 2-dimensional OCDMA.

    Science.gov (United States)

    Wang, Xu; Chan, Kam

    2004-07-26

    Free-running gain-switched Fabry-Perot laser diode is an appropriate incoherent broadband optical source for incoherent 2-dimensional optical code division multiple access. However, the mode partition noise (MPN) in the laser seriously degrades performance. We derived a bit error rate (BER) expression in the presence of MPN using the power spectra of the laser. The theory agreed with the experimental results. There was a power penalty and BER floor due to the MPN in the laser. Therefore, this scheme should be operated with a sufficiently large number of modes. At least 9 modes should be used for error-free transmission at 1 Gbit/s for the laser we investigated in this work.

  4. Amplification of the Signal Intensity of Fluorescence-Based Fiber-Optic Biosensors Using a Fabry-Perot Resonator Structure

    Directory of Open Access Journals (Sweden)

    Meng-Chang Hsieh

    2015-02-01

    Full Text Available Fluorescent biosensors have been widely used in biomedical applications. To amplify the intensity of fluorescence signals, this study developed a novel structure for an evanescent wave fiber-optic biosensor by using a Fabry-Perot resonator structure. An excitation light was coupled into the optical fiber through a laser-drilled hole on the proximal end of the resonator. After entering the resonator, the excitation light was reflected back and forth inside the resonator, thereby amplifying the intensity of the light in the fiber. Subsequently, the light was used to excite the fluorescent molecules in the reactive region of the sensor. The experimental results showed that the biosensor signal was amplified eight-fold when the resonator reflector was formed using a 92% reflective coating. Furthermore, in a simulation, the biosensor signal could be amplified 20-fold by using a 99% reflector.

  5. A new method for multi-channel Fabry-Perot spectroscopy of light pulses in the nanosecond regime

    International Nuclear Information System (INIS)

    Behn, R.

    1975-01-01

    The demand for powerful multichannel spectrometers raised, e.g., in laser scattering plasma diagnostics, gave rise to the question if it would not be possible to avoid the light losses occuring in the use of multichannel Fabry-Perot spectrometers. These losses can be avoided with the technique presented here. The reflected light is collected and fed back to the interferometer at a different angle. It can thus be recovered for registration in another spectral channel. This method is particularly suitable for the investigation of short light pulses. A spectrum can thus be scanned step by step with full utilization of the transit time of the light pulse. In addition to light recovery, there is another advantage in that only one detector is used for multichannel analysis, thus eliminating calibration problems. In the annex to the report, emission spectres of different dye laser versions are presented and explained. (orig./GG) [de

  6. GHGSat-D: Greenhouse gas plume imaging and quantification from space using a Fabry-Perot imaging spectrometer

    Science.gov (United States)

    McKeever, J.; Durak, B. O. A.; Gains, D.; Jervis, D.; Varon, D. J.; Germain, S.; Sloan, J. J.

    2017-12-01

    GHGSat, Inc. has launched the first satellite designed to detect and quantify greenhouse gas emissions from individual industrial sites. Our demonstration satellite GHGSat-D or "CLAIRE" was launched in June 2016. It weighs less than 15 kg and its primary instrument is a miniaturized Fabry-Perot imaging spectrometer with spectral resolution on the order of 0.1 nm. The spectral bandpass is 1635-1670 nm, giving the instrument access to absorption bands of both CO2 and CH4. Our system is based on targeted observations rather than global coverage, and our spatial imaging resolution is a key differentiator. Specifically, with a ground sampling distance of effect of the Fabry-Perot resonator and the scrolling scene gives a different spectral sampling of each surface location in every image. While our data processing toolchain does not produce a conventional hyperspectral dataset, it does yield a spectral decomposition of the spatially resolved signal that is compared to a model that includes atmospheric radiative transfer and the instrument's pixel-dependent spectral responsivity. Our presentation will describe the instrument design, concept of operations and retrievals approach. We will also present images and results from GHGSat-D at different processing levels, including high-resolution column density retrievals. An observation of the degassing flux of methane from the outlet of a recently impounded hydroelectric reservoir will be shown as an example. Finally we discuss some performance limitations of GHGSat-D and our plans to overcome them as we update the instrument design for the next satellites.

  7. Simultaneous measure of a spectral line profile and the apparatus function of a Fabry-Perot spectrometer when continuous background is present

    International Nuclear Information System (INIS)

    Moreno, J.M.; Quintanilla, M.; Mar, S.

    1978-01-01

    A deconvolution method of registered profile on a Fabry-Perot spectrometer is developed, when the actual profile of the source is a Voigt pattern together with a continuous background. The reliability and accuracy of the method is tested with theoreticaly simulated profiles. The method is applied both to measure the real line profiles and to find the Fabry-Perot parameters, as a test of its validity on studies of experimental profiles. Both measure types -source profile and apparatus function- are made simultaneously by means of analysis of the variations of registered profile, at 6438.5A Cd line and 6328A He-Ne laser line, varying the optical path between interferometer mirrors. (author) [es

  8. Development of a six channel Fabry-Perot interferometer for continuous measurement of electron temperature of Tokamak plasma. Application to current diffusion study

    International Nuclear Information System (INIS)

    Talvard, M.

    1984-10-01

    It is shown how the properties of the electron cyclotron emission of a tokamak plasma can be used to measure the electron temperature. The design of a six channel Fabry-Perot interferometer is then described. This interferometer allows the measurement of the time evolution of the electron temperature profile of the plasma in the TFR tokamak. Using this technique interesting results have been obtained concerning the current penetration during the start up phase of a tokamak discharge [fr

  9. Passive amplification of a fiber laser in a Fabry-Perot cavity: application to gamma-ray production by Compton backscattering

    International Nuclear Information System (INIS)

    Labaye, F.

    2012-01-01

    One of the critical points of the International Linear Collider (ILC) is the polarized positrons source. Without going through further explanation on the physical process of polarized positrons production, we point out that they are produced when circularly polarized gamma rays interact with mater. Thus, the critical point is the circularly polarized gamma-ray source. A technical solution for this source is the Compton backscattering and in the end, this thesis takes place in the framework for the design of a high average power laser systems enslaved to Fabry-Perot cavities for polarized gamma-ray production by Compton backscattering. In the first part, we present this thesis context, the Compton backscattering principle and the choice for an optical architecture based on a fiber laser and a Fabry-Perot cavity. We finish by enumerating several possible applications for Compton backscattering which shows that the work presented here might benefits from technology transfer through others research fields. In the second part, we present the different fiber laser architecture studied as well as the results obtained. In the third part, we remind the operating principle of a Fabry-Perot cavity and present the one used for our experiment as well as its specificities. In the fourth part, we address the Compton backscattering experiment which enables us to present the joint utilization of a fiber laser and a Fabry-Perot cavity in a particles accelerator to generate gamma rays for the first time to our knowledge. This experiment took place in the Accelerator Test Facility (ATF). The experimental apparatus as well as the results obtained are thus presented. In the end, we summarize the results presented in this manuscript and propose different evolution possibilities for the system in a general conclusion. (author)

  10. Watt-level widely tunable single-mode emission by injection-locking of a multimode Fabry-Perot quantum cascade laser

    Science.gov (United States)

    Chevalier, Paul; Piccardo, Marco; Anand, Sajant; Mejia, Enrique A.; Wang, Yongrui; Mansuripur, Tobias S.; Xie, Feng; Lascola, Kevin; Belyanin, Alexey; Capasso, Federico

    2018-02-01

    Free-running Fabry-Perot lasers normally operate in a single-mode regime until the pumping current is increased beyond the single-mode instability threshold, above which they evolve into a multimode state. As a result of this instability, the single-mode operation of these lasers is typically constrained to few percents of their output power range, this being an undesired limitation in spectroscopy applications. In order to expand the span of single-mode operation, we use an optical injection seed generated by an external-cavity single-mode laser source to force the Fabry-Perot quantum cascade laser into a single-mode state in the high current range, where it would otherwise operate in a multimode regime. Utilizing this approach, we achieve single-mode emission at room temperature with a tuning range of 36 cm-1 and stable continuous-wave output power exceeding 1 W at 4.5 μm. Far-field measurements show that a single transverse mode is emitted up to the highest optical power, indicating that the beam properties of the seeded Fabry-Perot laser remain unchanged as compared to free-running operation.

  11. An MRI-Guided Telesurgery System Using a Fabry-Perot Interferometry Force Sensor and a Pneumatic Haptic Device.

    Science.gov (United States)

    Su, Hao; Shang, Weijian; Li, Gang; Patel, Niravkumar; Fischer, Gregory S

    2017-08-01

    This paper presents a surgical master-slave teleoperation system for percutaneous interventional procedures under continuous magnetic resonance imaging (MRI) guidance. The slave robot consists of a piezoelectrically actuated 6-degree-of-freedom (DOF) robot for needle placement with an integrated fiber optic force sensor (1-DOF axial force measurement) using the Fabry-Perot interferometry (FPI) sensing principle; it is configured to operate inside the bore of the MRI scanner during imaging. By leveraging the advantages of pneumatic and piezoelectric actuation in force and position control respectively, we have designed a pneumatically actuated master robot (haptic device) with strain gauge based force sensing that is configured to operate the slave from within the scanner room during imaging. The slave robot follows the insertion motion of the haptic device while the haptic device displays the needle insertion force as measured by the FPI sensor. Image interference evaluation demonstrates that the telesurgery system presents a signal to noise ratio reduction of less than 17% and less than 1% geometric distortion during simultaneous robot motion and imaging. Teleoperated needle insertion and rotation experiments were performed to reach 10 targets in a soft tissue-mimicking phantom with 0.70 ± 0.35 mm Cartesian space error.

  12. Displacement-noise-free gravitational-wave detection with a single Fabry-Perot cavity: A toy model

    International Nuclear Information System (INIS)

    Tarabrin, Sergey P.; Vyatchanin, Sergey P.

    2008-01-01

    We propose a detuned Fabry-Perot cavity, pumped through both the mirrors, as a toy model of the gravitational-wave (GW) detector partially free from displacement noise of the test masses. It is demonstrated that the noise of cavity mirrors can be eliminated, but the one of lasers and detectors cannot. The isolation of the GW signal from displacement noise of the mirrors is achieved in a proper linear combination of the cavity output signals. The construction of such a linear combination is possible due to the difference between the reflected and transmitted output signals of detuned cavity. We demonstrate that in low-frequency region the obtained displacement-noise-free response signal is much stronger than the f gw 3 -limited sensitivity of displacement-noise-free interferometers recently proposed by S. Kawamura and Y. Chen. However, the loss of the resonant gain in the noise cancelation procedure results is the sensitivity limitation of our toy model by displacement noise of lasers and detectors

  13. Cost-effective optical fiber pressure sensor based on intrinsic Fabry-Perot interferometric micro-cavities

    Science.gov (United States)

    Domingues, M. Fátima; Rodriguez, Camilo A.; Martins, Joana; Tavares, Cátia; Marques, Carlos; Alberto, Nélia; André, Paulo; Antunes, Paulo

    2018-05-01

    In this work, a cost-effective procedure to manufacture optical fiber pressure sensors is presented. This has a high relevance for integration in robotic exoskeletons or for gait plantar pressure monitoring within the physical rehabilitation scenarios, among other applications. The sensing elements are based on Fabry-Perot interferometric (FPI) micro-cavities, created from the recycling of optical fibers previously destroyed by the catastrophic fuse effect. To produce the pressure sensors, the fiber containing the FPI micro-cavities was embedded in an epoxy resin cylinder used as pressure transducer and responsible to transfer the pressure applied on its surface to the optical fiber containing the FPI micro-cavity. Before the embedding process, some FPI sensors were also characterized to strain variations. After that, the effect of the encapsulation of the FPI structure into the resin was assessed, from which a slight decrease on the FPI interferogram fringes visibility was verified, indicating a small increase in the micro-cavity length. Up on the sensors characterization, a linear dependence of the wavelength shift with the induced pressure was obtained, which leads to a maximum sensitivity of 59.39 ± 1.7 pm/kPa. Moreover, direct dependence of the pressure sensitivity with the micro-cavity volume and length was found.

  14. A high-transmission liquid-crystal Fabry-Perot infrared filter for electrically tunable spectral imaging detection

    Science.gov (United States)

    Liu, Zhonglun; Xin, Zhaowei; Long, Huabao; Wei, Dong; Dai, Wanwan; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng

    2018-02-01

    Previous studies have presented the usefulness of typical liquid-crystal Fabry-Perot (LC-FP) infrared filters for spectral imaging detection. Yet, their infrared transmission performances still remain to improve or even rise. In this paper, we propose a new type of electrically tunable LC-FP infrared filter to solve the problem above. The key component of the device is a FP resonant cavity composed of two parallel plane mirrors, in which the zinc selenide (ZnSe) materials with a very high transmittance in the mid-long-wavelength infrared regions are used as the electrode substrates and a layer of nano-aluminum (Al) film, which is directly contacted with liquid-crystal materials, is chosen to make high reflective mirrors as well as the electrodes. Particularly, it should be noted that the directional layer made up of ployimide (PI) used previously is removed. The experiment results indicate that the filter can reduce the absorption of infrared wave remarkably, and thus highlight a road to effectively improve the infrared transmittance ability.

  15. Intra-Tissue Pressure Measurement in Ex Vivo Liver Undergoing Laser Ablation with Fiber-Optic Fabry-Perot Probe

    Directory of Open Access Journals (Sweden)

    Daniele Tosi

    2016-04-01

    Full Text Available We report the first-ever intra-tissue pressure measurement performed during 1064 nm laser ablation (LA of an ex vivo porcine liver. Pressure detection has been performed with a biocompatible, all-glass, temperature-insensitive Extrinsic Fabry-Perot Interferometry (EFPI miniature probe; the proposed methodology mimics in-vivo treatment. Four experiments have been performed, positioning the probe at different positions from the laser applicator tip (from 0.5 mm to 5 mm. Pressure levels increase during ablation time, and decrease with distance from applicator tip: the recorded peak parenchymal pressure levels range from 1.9 kPa to 71.6 kPa. Different pressure evolutions have been recorded, as pressure rises earlier in proximity of the tip. The present study is the first investigation of parenchymal pressure detection in liver undergoing LA: the successful detection of intra-tissue pressure may be a key asset for improving LA, as pressure levels have been correlated to scattered recurrences of tumors by different studies.

  16. Measurement of Microvibration by Using Dual-Cavity Fiber Fabry-Perot Interferometer for Structural Health Monitoring

    Directory of Open Access Journals (Sweden)

    Dae-Hyun Kim

    2014-01-01

    Full Text Available Extensive researches have recently been performed to study structural integrity using structural vibration data measured by in-structure sensors. A fiber optic sensor is one of candidates for the in-structure sensors because it is low in cost, light in weight, small in size, resistant to EM interference, long in service life, and so forth. Especially, an interferometric fiber optic sensor is very useful to measure vibrations with high resolution and accuracy. In this paper, a dual-cavity fiber Fabry-Perot interferometer was proposed with a phase-compensating algorithm for measuring micro-vibration. The interferometer has structurally two arbitrary cavities; therefore the initial phase difference between two sinusoidal signals induced from the interferometer was also arbitrary. In order to do signal processing including an arc-tangent method, a random value of the initial phase difference is automatically adjusted to the exact 90 degrees in the phase-compensating algorithm part. For the verification of the performance of the interferometer, a simple vibration-test was performed to measure micro-vibration caused by piezoelectric transducer (PZT. As an experimental result, the interferometer attached on the PZT successfully measured the 50 Hz-vibration of which the absolute displacement oscillated between −424 nm and +424 nm.

  17. Fabry-Perot magnonic ballistic coherent transport across ultrathin ferromagnetic lamellar bcc Ni nanostructures between Fe leads

    Science.gov (United States)

    Khater, A.; Saim, L.; Tigrine, R.; Ghader, D.

    2018-06-01

    We propose thermodynamically stable systems of ultrathin lamellar bcc Ni nanostructures between bcc Fe leads, sbnd Fe[Ni(n)]Fesbnd , based on the available literature for bcc Ni overlayers on Fe(001) surfaces, and establish the necessary criteria for their structural and ferromagnetic order, for thicknesses n ≤ 6 bcc Ni monatomic layers. The system is globally ferromagnetic. A theoretical model is presented to investigate and understand the ballistic coherent scattering of Fe spin-waves, incident from the leads, at the ferromagnetic bcc Ni nanostructure. The Nisbnd Ni and Nisbnd Fe exchange are computed using the Ising effective field theory (EFT), and the magnetic ground state of the system is constructed in the Heisenberg representation. We compute the spin-wave eigenmodes localized on the bcc Ni nanostructure, using the phase field matching theory (PFMT), illustrating the effects of symmetry breaking on the confinement of localized spin excitations. The reflection and transmission scattering properties of spin-waves incident from the Fe leads, across the embedded Ni nanostructures are investigated within the framework of the same PFMT methodology. A highly refined Fabry-Perot magnonic ballistic coherent transmission spectra is observed for these sbnd Fe[Ni(n)]Fesbnd systems.

  18. Fiber Fabry-Perot Force Sensor with Small Volume and High Performance for Assessing Fretting Damage of Steam Generator Tubes.

    Science.gov (United States)

    Huang, Peijian; Wang, Ning; Li, Junying; Zhu, Yong; Zhang, Jie

    2017-12-13

    Measuring the radial collision force between the steam generator tube (SGT) and the tube support plate (TSP) is essential to assess the fretting damage of the SGT. In order to measure the radial collision force, a novel miniaturized force sensor based on fiber Fabry-Perot (F-P) was designed, and the principle and characteristics of the sensor were analyzed in detail. Then, the F-P force sensor was successfully fabricated and calibrated, and the overall dimensions of the encapsulated fiber F-P sensor were 17 mm × 5 mm × 3 mm (L × W × H). The sensor works well in humid, high pressure (10 MPa), high temperature (350 °C), and vibration (40 kHz) environments. Finally, the F-P force sensors were installed in a 1:1 steam generator test loop, and the radial collision force signals between the SGT and the TSP were obtained. The experiments indicated that the F-P sensor with small volume and high performance could help in assessing the fretting damage of the steam generator tubes.

  19. A Fabry-Perot Interferometry Based MRI-Compatible Miniature Uniaxial Force Sensor for Percutaneous Needle Placement

    Science.gov (United States)

    Shang, Weijian; Su, Hao; Li, Gang; Furlong, Cosme; Fischer, Gregory S.

    2014-01-01

    Robot-assisted surgical procedures, taking advantage of the high soft tissue contrast and real-time imaging of magnetic resonance imaging (MRI), are developing rapidly. However, it is crucial to maintain tactile force feedback in MRI-guided needle-based procedures. This paper presents a Fabry-Perot interference (FPI) based system of an MRI-compatible fiber optic sensor which has been integrated into a piezoelectrically actuated robot for prostate cancer biopsy and brachytherapy in 3T MRI scanner. The opto-electronic sensing system design was minimized to fit inside an MRI-compatible robot controller enclosure. A flexure mechanism was designed that integrates the FPI sensor fiber for measuring needle insertion force, and finite element analysis was performed for optimizing the correct force-deformation relationship. The compact, low-cost FPI sensing system was integrated into the robot and calibration was conducted. The root mean square (RMS) error of the calibration among the range of 0–10 Newton was 0.318 Newton comparing to the theoretical model which has been proven sufficient for robot control and teleoperation. PMID:25126153

  20. Wavelength-tunable thulium-doped fiber laser by employing a self-made Fabry-Perot filter

    Science.gov (United States)

    Wang, Y. P.; Ju, Y. L.; Wu, C. T.; Liu, W.; Yang, C.

    2017-06-01

    In this demonstration, we proposed a novel wavelength-tunable thulium-doped fiber laser (TDFL) with a self-made Fabry-Perot (F-P) filter. When the F-P filter was not inserted, the maximum output power of 11.1 W was achieved when the pump power was 70.2 W. The corresponding optical-to-optical conversion efficiency was 15.8% and the slope efficiency was 22.1%. When the F-P filter was inserted, the output wavelength could be tuned from 1952.9 to 1934.9 nm with the change of cavity length of F-P filter which was fixed on a piezoelectric ceramic transducer (PZT) controlled by the voltage applied to it. The full width at half maximum (FWHM) was no more than 0.19 nm. Furthermore, the wavelength fluctuations of the tunable fiber laser were kept within  ±0.2 nm.

  1. Cascaded-cavity Fabry-Perot interferometer for simultaneous measurement of temperature and strain with cross-sensitivity compensation

    Science.gov (United States)

    Tian, Jiajun; Jiao, Yuzhu; Ji, Shaobo; Dong, Xiaolong; Yao, Yong

    2018-04-01

    We propose and demonstrate a fiber sensor for simultaneous temperature and strain measurements. The proposed sensor is implemented by a cascaded-cavity Fabry-Perot (FP) fiber interferometer. The two cascaded FP cavities comprise a micro-air-cavity in a hollow-core tube fiber and a micro-silica-cavity in a standard single-mode fiber. To separate the interference spectrum of each FP cavity, the total spectrum is filtered in the frequency domain through band-pass filters, whose central frequencies were predesigned based on the relationship between the spatial frequency and free spectral range of each FP cavity. The different cross-sectional areas and thermal-optic coefficients of the two FP cavities confer different sensitivities to temperature and strain. Both parameters were measured simultaneously by tracking the wavelength shifts in the filtered interference spectra of the FP cavities. Moreover, the temperature-strain cross-sensitivity was compensated by solving a sensitivity-coefficient matrix equation for the two cavities, using the calibrated temperatures and strains. Other advantages of the proposed sensor are simple fabrication and an all-fiber structure. Owing to these properties, the proposed sensor is potentially applicable to real sensing applications.

  2. Surface stress sensor based on MEMS Fabry-Perot interferometer with high wavelength selectivity for label-free biosensing

    Science.gov (United States)

    Takahashi, Toshiaki; Hizawa, Takeshi; Misawa, Nobuo; Taki, Miki; Sawada, Kazuaki; Takahashi, Kazuhiro

    2018-05-01

    We have developed a surface stress sensor based on a microelectromechanical Fabry-Perot interferometer with high wavelength selectivity by using Au half-mirrors, for highly sensitive label-free biosensing. When the target molecule is adsorbed by the antigen-antibody reaction onto a movable membrane with a thin Au film, which acts as an upper mirror of the optical interferometer, the amount of deflection of the movable membrane deflected by the change in surface stress can be detected with high sensitivity. To improve the signal at the small membrane deflection region of this biosensor resulting in detection of low concentration molecules, by integrating 50 nm-thick Au half-mirrors, the wavelength selectivity of the optical interferometer has been successfully improved 6.6 times. Furthermore, the peak shift in the reflection spectrum due to the adsorption of bovine serum albumin (BSA) antigen with a concentration of 10 ng ml-l by the antigen-antibody reaction was spectroscopically measured on the fabricated optical interferometer, and the deflection amount of the movable membrane after 10 min treatment was 2.4 times larger than that of nonspecific adsorption with the avidin molecules. This result indicated that the proposed sensor can be used for selective detection of low-concentration target antigen molecules.

  3. Active cancellation of residual amplitude modulation in a frequency-modulation based Fabry-Perot interferometer.

    Science.gov (United States)

    Yu, Yinan; Wang, Yicheng; Pratt, Jon R

    2016-03-01

    Residual amplitude modulation (RAM) is one of the most common noise sources known to degrade the sensitivity of frequency modulation spectroscopy. RAM can arise as a result of the temperature dependent birefringence of the modulator crystal, which causes the orientation of the crystal's optical axis to shift with respect to the polarization of the incident light with temperature. In the fiber-based optical interferometer used on the National Institute of Standards and Technology calculable capacitor, RAM degrades the measured laser frequency stability and correlates with the environmental temperature fluctuations. We have demonstrated a simple approach that cancels out excessive RAM due to polarization mismatch between the light and the optical axis of the crystal. The approach allows us to measure the frequency noise of a heterodyne beat between two lasers individually locked to different resonant modes of a cavity with an accuracy better than 0.5 ppm, which meets the requirement to further determine the longitudinal mode number of the cavity length. Also, this approach has substantially mitigated the temperature dependency of the measurements of the cavity length and consequently the capacitance.

  4. Synchronization scenario of two distant mutually coupled semiconductor lasers

    DEFF Research Database (Denmark)

    Mulet, Josep; Mirasso, Claudio; Heil, Tilmann

    2004-01-01

    We present numerical and experimental investigations of the synchronization of the coupling-induced instabilities in two distant mutually coupled semiconductor lasers. In our experiments, two similar Fabry-Perot lasers are coupled via their coherent optical fields. Our theoretical framework is ba...

  5. Multi-event study of high-latitude thermospheric wind variations at substorm onset with a Fabry-Perot interferometer at Tromsoe, Norway

    Science.gov (United States)

    Xu, H.; Shiokawa, K.; Oyama, S. I.; Otsuka, Y.

    2017-12-01

    We studied the high-latitude thermospheric wind variations near the onset time of isolated substorms. Substorm-related energy input from the magnetosphere to the polar ionosphere modifies the high-latitude ionosphere and thermosphere. For the first time, this study showed the characteristics of high-latitude thermospheric wind variations at the substorm onset. We also investigated the possibility of these wind variations as a potential trigger of substorm onset by modifying the ionospheric current system (Kan, 1993). A Fabry-Perot interferometer (FPI) at Tromsoe, Norway provided wind measurements estimated from Doppler shift of both red-line (630.0 nm for the F region) and green-line (557.7 nm for the E region) emissions of aurora and airglow. We used seven-year data sets obtained from 2009 to 2015 with a time resolution of 13 min. We first identified the onset times of local isolated substorms using ground-based magnetometer data obtained at the Tromsoe and Bear Island stations, which belongs to the IMAGE magnetometer chain. We obtained 4 red-line events and 5 green-line events taken place at different local times. For all these events, the peak locations of westward ionospheric currents identified by the ground-based magnetometer chain were located at the poleward side of Tromsoe. Then, we calculated two weighted averages of wind velocities for 30 min around the onset time and 30 min after the onset time of substorms. We evaluated differences between these two weighted averages to estimate the strength of wind changes. The observed wind changes at these substorm onsets were less than 49 m/s (26 m/s) for red-line (green-line) events, which are much smaller than the typical plasma convection speed. This indicates that the plasma motion caused by substorm-induced thermospheric winds through ion-neutral collisions is a minor effect as the driver of high-latitude plasma convection, as well as the triggering of substorm onset. We discuss possible causes of these

  6. Stratospheric temperature measurement with scanning Fabry-Perot interferometer for wind retrieval from mobile Rayleigh Doppler lidar.

    Science.gov (United States)

    Xia, Haiyun; Dou, Xiankang; Shangguan, Mingjia; Zhao, Ruocan; Sun, Dongsong; Wang, Chong; Qiu, Jiawei; Shu, Zhifeng; Xue, Xianghui; Han, Yuli; Han, Yan

    2014-09-08

    Temperature detection remains challenging in the low stratosphere, where the Rayleigh integration lidar is perturbed by aerosol contamination and ozone absorption while the rotational Raman lidar is suffered from its low scattering cross section. To correct the impacts of temperature on the Rayleigh Doppler lidar, a high spectral resolution lidar (HSRL) based on cavity scanning Fabry-Perot Interferometer (FPI) is developed. By considering the effect of the laser spectral width, Doppler broadening of the molecular backscatter, divergence of the light beam and mirror defects of the FPI, a well-behaved transmission function is proved to show the principle of HSRL in detail. Analysis of the statistical error of the HSRL is carried out in the data processing. A temperature lidar using both HSRL and Rayleigh integration techniques is incorporated into the Rayleigh Doppler wind lidar. Simultaneous wind and temperature detection is carried out based on the combined system at Delhi (37.371°N, 97.374°E; 2850 m above the sea level) in Qinghai province, China. Lower Stratosphere temperature has been measured using HSRL between 18 and 50 km with temporal resolution of 2000 seconds. The statistical error of the derived temperatures is between 0.2 and 9.2 K. The temperature profile retrieved from the HSRL and wind profile from the Rayleigh Doppler lidar show good agreement with the radiosonde data. Specifically, the max temperature deviation between the HSRL and radiosonde is 4.7 K from 18 km to 36 km, and it is 2.7 K between the HSRL and Rayleigh integration lidar from 27 km to 34 km.

  7. Room-Temperature Pressure-Induced Optically-Actuated Fabry-Perot Nanomechanical Resonator with Multilayer Graphene Diaphragm in Air

    Directory of Open Access Journals (Sweden)

    Cheng Li

    2017-11-01

    Full Text Available We demonstrated a miniature and in situ ~13-layer graphene nanomechanical resonator by utilizing a simple optical fiber Fabry-Perot (F-P interferometric excitation and detection scheme. The graphene film was transferred onto the endface of a ferrule with a 125-μm inner diameter. In contrast to the pre-tension induced in membrane that increased quality (Q factor to ~18.5 from ~3.23 at room temperature and normal pressure, the limited effects of air damping on resonance behaviors at 10−2 and 105 Pa were demonstrated by characterizing graphene F-P resonators with open and micro-air-gap cavities. Then in terms of optomechanical behaviors of the resonator with an air micro-cavity configuration using a polished ferrule substrate, measured resonance frequencies were increased to the range of 509–542 kHz from several kHz with a maximum Q factor of 16.6 despite the lower Knudsen number ranging from 0.0002 to 0.0006 in damping air over a relative pressure range of 0–199 kPa. However, there was the little dependence of Q on resonance frequency. Note that compared with the inferior F-P cavity length response to applied pressures due to interfacial air leakage, the developed F-P resonator exhibited a consistent fitted pressure sensitivity of 1.18 × 105 kHz3/kPa with a good linearity error of 5.16% in the tested range. These measurements shed light on the pre-stress-dominated pressure-sensitive mechanisms behind air damping in in situ F-P resonant sensors using graphene or other 2D nanomaterials.

  8. Photonic filtering of microwave signals in the frequency range of 0.01-20 GHz using a Fabry-Perot filter

    Energy Technology Data Exchange (ETDEWEB)

    Aguayo-Rodriguez, G; Zaldivar-Huerta, I E [Instituto Nacional de Astrofisica, Optica y Electronica (INAOE). Sta. Maria Tonantzintla, Pue. Mexico (Mexico); GarcIa-Juarez, A [Depto. de Investigacion en Fisica, Universidad de Sonora (UNISON) Hermosillo, Son. Mexico (Mexico); Rodriguez-Asomoza, J [Depto. de Ingenieria Electronica, Universidad de las Americas-Puebla (UDLA). San Andres Cholula, Pue. Mexico (Mexico); Larger, L; Courjal, N [Laboratoire d' Optique P. M. Duffieux, UMR 6603 CNRS, Institut des Microtechiques de Franche-Comte, FRW 0067, UFR Sciences et Techniques, Universite de Franche-Comte (UFC), Besancon cedex (France)

    2011-01-01

    We demonstrate experimentally the efficiency of tuning of a photonic filter in the frequency range of 0.01 to 20 GHz. The presented work combines the use of a multimode optical source associated with a dispersive optical fiber to obtain the filtering effect. Tunability effect is achieved by the use of a Fabry-Perot filter that allows altering the spectral characteristics of the optical source. Experimental results are validated by means of numerical simulations. The scheme here proposed has a potential application in the field of optical telecommunications.

  9. Time-domain multiplexed high resolution fiber optics strain sensor system based on temporal response of fiber Fabry-Perot interferometers.

    Science.gov (United States)

    Chen, Jiageng; Liu, Qingwen; He, Zuyuan

    2017-09-04

    We developed a multiplexed strain sensor system with high resolution using fiber Fabry-Perot interferometers (FFPI) as sensing elements. The temporal responses of the FFPIs excited by rectangular laser pulses are used to obtain the strain applied on each FFPI. The FFPIs are connected by cascaded couplers and delay fiber rolls for the time-domain multiplexing. A compact optoelectronic system performing closed-loop cyclic interrogation is employed to improve the sensing resolution and the frequency response. In the demonstration experiment, 3-channel strain sensing with resolutions better than 0.1 nε and frequency response higher than 100 Hz is realized.

  10. Equatorial thermospheric winds: New results using data from a network of three Fabry-Perot interferometers located in central Peru

    Science.gov (United States)

    Meriwether, J. W.; Dominquez, L. N.; Milla, M. A.; Chau, J. L.; Makela, J. J.; Fisher, D.

    2013-12-01

    A new observing strategy aimed at improving our understanding of the properties of the equatorial thermosphere wind field, such as the vorticity and divergence, has been developed to generate maps of the thermospheric wind field. Estimates of the neutral wind are obtained from measurements of the Doppler shift of the thermospheric 630.0-nm emission obtained from a sequence of eight evenly spaced azimuthal directions for each of the three Fabry-Perot interferometer (FPI) observatories located in central Peru (Jicamarca, Nazca, and Arequipa). Measurements towards the zenith and a frequency-stabilized laser reference are also included in each sequence, which takes ~25 minutes to complete. Six of the off-zenith observing directions from the Nazca FPI observatory are used to make common volume (CV) measurements, where two of the FPIs observe the same thermospheric volume with a centroid height of ~250 km at orthogonal angles. These CV positions are located ~225 km north and south of the Nazca FPI observatory. The data obtained during a coordinated observation of the two FPIs observing the same CV location are used to compute estimates of the zonal (u) and meridional (v) wind components. The set of Doppler shifts measured by the three FPIs during a single sequence is used to produce a map of the neutral wind field for that period of time. The construction of this map is based upon the use of a first-order polynomial expansion of the neutral wind field relative to the site coordinates of each FPI location. This expansion includes the first-order gradients of u and v with respect to the zonal (x) and meridional (y) directions. Computation of the best fit in a linear least squares sense of the model expansion parameters to the Doppler shift data for all three sites determines the values of these gradient parameters. Results obtained for mid-winter 2013 show the anti-cyclonic circulation expected near the terminator generated by the day-to-night pressure gradient. Sequences

  11. Ag-protein plasmonic architectures for surface plasmon-coupled emission enhancements and Fabry-Perot mode-coupled directional fluorescence emission

    Science.gov (United States)

    Badiya, Pradeep Kumar; Patnaik, Sai Gourang; Srinivasan, Venkatesh; Reddy, Narendra; Manohar, Chelli Sai; Vedarajan, Raman; Mastumi, Noriyoshi; Belliraj, Siva Kumar; Ramamurthy, Sai Sathish

    2017-10-01

    We report the use of silver decorated plant proteins as spacer material for augmented surface plasmon-coupled emission (120-fold enhancement) and plasmon-enhanced Raman scattering. We extracted several proteins from different plant sources [Triticum aestivum (TA), Aegle marmelos (AM), Ricinus communis (RC), Jatropha curcas (JC) and Simarouba glauca (SG)] followed by evaluation of their optical properties and simulations to rationalize observed surface plasmon resonance. Since the properties exhibited by protein thin films is currently gaining research interest, we have also carried out simulation studies with Ag-protein biocomposites as spacer materials in metal-dielectric-metal planar microcavity architecture for guided emission of Fabry-Perot mode-coupled fluorescence.

  12. Effect of small variations in the refractive index of the ambient medium on the spectrum of a bent fibre-optic Fabry - Perot interferometer

    International Nuclear Information System (INIS)

    Kulchin, Yurii N; Vitrik, O B; Gurbatov, S O

    2011-01-01

    The phase of light propagating through a bent optical fibre is shown to depend on the refractive index of the medium surrounding the fibre cladding when there is resonance coupling between the guided core mode and cladding modes. This shifts the spectral maxima in the bent fibre-optic Fabry - Perot interferometer. The highest phase and spectral sensitivities achieved with this interferometer configuration are 0.71 and 0.077, respectively, and enable changes in the refractive index of the ambient medium down to 5×10 -6 to be detected. This makes the proposed approach potentially attractive for producing highly stable, precision refractive index sensors capable of solving a wide range of liquid refractometry problems.

  13. Effect of small variations in the refractive index of the ambient medium on the spectrum of a bent fibre-optic Fabry - Perot interferometer

    Energy Technology Data Exchange (ETDEWEB)

    Kulchin, Yurii N; Vitrik, O B; Gurbatov, S O [Institute for Automation and Control Processes, Far-Eastern Branch, Russian Academy of Sciences, Vladivostok (Russian Federation)

    2011-09-30

    The phase of light propagating through a bent optical fibre is shown to depend on the refractive index of the medium surrounding the fibre cladding when there is resonance coupling between the guided core mode and cladding modes. This shifts the spectral maxima in the bent fibre-optic Fabry - Perot interferometer. The highest phase and spectral sensitivities achieved with this interferometer configuration are 0.71 and 0.077, respectively, and enable changes in the refractive index of the ambient medium down to 5 Multiplication-Sign 10{sup -6} to be detected. This makes the proposed approach potentially attractive for producing highly stable, precision refractive index sensors capable of solving a wide range of liquid refractometry problems.

  14. Ground-based Fabry-Perot interferometry of the terrestrial nightglow with a bare charge-coupled device; Remote field site deployment

    International Nuclear Information System (INIS)

    Niciejewski, R.; Killeen, T.L.; Turnbull, M.

    1994-01-01

    The application of Fabry-Perot interferometers (FPIs) to the study of upper atmosphere thermodynamics has largely been restricted by the very low light levels in the terrestrial airglow as well as the limited range in wavelength of photomultiplier tube (PMT) technology. During the past decade, the development of the scientific grade charge-coupled device (CCD) has progressed to the stage in which the detector has become the logical replacement for the PMT. Small fast microcomputers have made it possible to ''upgrade'' the remote field sites which bare CCDs and not only retain the previous capabilities of the existing FPIs but expand the data coverage in both temporal and wavelength domains. The problems encountered and the solutions applied to the deployment of a bare CCD, with data acquisition and image reduction techniques, are discussed. Sample geophysical data determined from the FPI fringe profiles are shown for stations at Peach Mountain, Michigan, and Watson Lake, Yukon Territory

  15. Simple locking of infrared and ultraviolet diode lasers to a visible laser using a LabVIEW proportional-integral-derivative controller on a Fabry-Perot signal.

    Science.gov (United States)

    Kwolek, J M; Wells, J E; Goodman, D S; Smith, W W

    2016-05-01

    Simultaneous laser locking of infrared (IR) and ultraviolet lasers to a visible stabilized reference laser is demonstrated via a Fabry-Perot (FP) cavity. LabVIEW is used to analyze the input, and an internal proportional-integral-derivative algorithm converts the FP signal to an analog locking feedback signal. The locking program stabilized both lasers to a long term stability of better than 9 MHz, with a custom-built IR laser undergoing significant improvement in frequency stabilization. The results of this study demonstrate the viability of a simple, computer-controlled, non-temperature-stabilized FP locking scheme for our applications, laser cooling of Ca(+) ions, and its use in other applications with similar modest frequency stabilization requirements.

  16. Analysis and design of tunable wideband microwave photonics phase shifter based on Fabry-Perot cavity and Bragg mirrors in silicon-on-insulator waveguide.

    Science.gov (United States)

    Qu, Pengfei; Zhou, Jingran; Chen, Weiyou; Li, Fumin; Li, Haibin; Liu, Caixia; Ruan, Shengping; Dong, Wei

    2010-04-20

    We designed a microwave (MW) photonics phase shifter, consisting of a Fabry-Perot filter, a phase modulation region (PMR), and distributed Bragg reflectors, in a silicon-on-insulator rib waveguide. The thermo-optics effect was employed to tune the PMR. It was theoretically demonstrated that the linear MW phase shift of 0-2pi could be achieved by a refractive index variation of 0-9.68x10(-3) in an ultrawideband (about 38?GHz-1.9?THz), and the corresponding tuning resolution was about 6.92 degrees / degrees C. The device had a very compact size. It could be easily integrated in silicon optoelectronic chips and expected to be widely used in the high-frequency MW photonics field.

  17. Precision measurements of gas refractivity by means of a Fabry-Perot interferometer illustrated by the monitoring of radiator refractivity in the DELPHI RICH detectors

    CERN Document Server

    Filippas-Tassos, A; Fokitis, E; Maltezos, S; Patrinos, K

    2002-01-01

    With an updated, flexible, highly efficient and easily installed system we obtained accurate refractivity (n-1) values. This system is a refractometer based on a Fabry-Perot interferometer and was used to monitor the refractivity of DELPHI RICH Cherenkov radiators near the VUV region. By using a Pt-Ne spectral lamp and improved alignment and temperature control, the refractivities of C//5F//1//2 and C//4F//1 //0 have been monitored since 1996. With this light source, selected to have large coherence lengths, we can extract the refractivity at several wavelengths from one data set only. The estimated errors of the refractivity measurements are less than 1.2%, and depend on wavelength and the type of gas used. The various parameters affecting the accuracy of the refractometer are also discussed. Finally, results from special sample refractivity measurements of the liquid radiator (C//6F//1//4) in its gas phase, are presented.

  18. Performance of a Distributed Simultaneous Strain and Temperature Sensor Based on a Fabry-Perot Laser Diode and a Dual-Stage FBG Optical Demultiplexer

    Directory of Open Access Journals (Sweden)

    Shinwon Kang

    2013-11-01

    Full Text Available A simultaneous strain and temperature measurement method using a Fabry-Perot laser diode (FP-LD and a dual-stage fiber Bragg grating (FBG optical demultiplexer was applied to a distributed sensor system based on Brillouin optical time domain reflectometry (BOTDR. By using a Kalman filter, we improved the performance of the FP-LD based OTDR, and decreased the noise using the dual-stage FBG optical demultiplexer. Applying the two developed components to the BOTDR system and using a temperature compensating algorithm, we successfully demonstrated the simultaneous measurement of strain and temperature distributions under various experimental conditions. The observed errors in the temperature and strain measured using the developed sensing system were 0.6 °C and 50 με, and the spatial resolution was 1 m, respectively.

  19. Performance of a distributed simultaneous strain and temperature sensor based on a Fabry-Perot laser diode and a dual-stage FBG optical demultiplexer.

    Science.gov (United States)

    Kim, Suhwan; Kwon, Hyungwoo; Yang, Injae; Lee, Seungho; Kim, Jeehyun; Kang, Shinwon

    2013-11-12

    A simultaneous strain and temperature measurement method using a Fabry-Perot laser diode (FP-LD) and a dual-stage fiber Bragg grating (FBG) optical demultiplexer was applied to a distributed sensor system based on Brillouin optical time domain reflectometry (BOTDR). By using a Kalman filter, we improved the performance of the FP-LD based OTDR, and decreased the noise using the dual-stage FBG optical demultiplexer. Applying the two developed components to the BOTDR system and using a temperature compensating algorithm, we successfully demonstrated the simultaneous measurement of strain and temperature distributions under various experimental conditions. The observed errors in the temperature and strain measured using the developed sensing system were 0.6 °C and 50 με, and the spatial resolution was 1 m, respectively.

  20. Electron density and temperature study of plasmas using a millimeter-wave Fabry-Perot interferometer; Etude de la densite electronique et de la temperature de plasmas a l'aide d'un interferometre Fabry-Perot en ondes millimetriques

    Energy Technology Data Exchange (ETDEWEB)

    Bize, D [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1969-07-01

    The contents of this article, which have been used as a basis for a State doctorate thesis, deal with research into focussing systems of the Fabry-Perot, millimetre wave type. With the help of this equipment, measurements have been made of the electronic density using interferometry in the range from 10{sup 9} to 10{sup 14} electrons/cm{sup 3}, and of the electron temperature by Thomson diffusion, of plasmas formed by laser ionisation and by high frequency. (author) [French] Le contenu de cet article, qui a fait l'objet d'une these d'Etat, se rapporte a l'etude des systemes focalisant de type Fabry-Perot en ondes millimetriques. A l'aide de ces dispositifs, on mesure la densite electronique par interferometrie dans la gamme de densites de 10{sup 9} a 10{sup 14} e/cm{sup 3} et la temperature electronique par diffusion Thomson de plasmas crees par ionisation laser et par haute frequence. (auteur)

  1. Electron density and temperature study of plasmas using a millimeter-wave Fabry-Perot interferometer; Etude de la densite electronique et de la temperature de plasmas a l'aide d'un interferometre Fabry-Perot en ondes millimetriques

    Energy Technology Data Exchange (ETDEWEB)

    Bize, D. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1969-07-01

    The contents of this article, which have been used as a basis for a State doctorate thesis, deal with research into focussing systems of the Fabry-Perot, millimetre wave type. With the help of this equipment, measurements have been made of the electronic density using interferometry in the range from 10{sup 9} to 10{sup 14} electrons/cm{sup 3}, and of the electron temperature by Thomson diffusion, of plasmas formed by laser ionisation and by high frequency. (author) [French] Le contenu de cet article, qui a fait l'objet d'une these d'Etat, se rapporte a l'etude des systemes focalisant de type Fabry-Perot en ondes millimetriques. A l'aide de ces dispositifs, on mesure la densite electronique par interferometrie dans la gamme de densites de 10{sup 9} a 10{sup 14} e/cm{sup 3} et la temperature electronique par diffusion Thomson de plasmas crees par ionisation laser et par haute frequence. (auteur)

  2. Research and investigation of a communication chain on optical fiber with a Fabry-Perot power diode for the automotive industry

    Science.gov (United States)

    Bacis, Irina Bristena; Vasile, Alexandru; Ionescu, Ciprian; Marghescu, Cristina

    2016-12-01

    The purpose of this paper is to analyze different power devices - emitters of optical flow, from the point of view of optical coupling, emitted optical powers, optical fiber losses and receiver. The research and characterization of the transmission through a power optical system is done using a computer system specialized for the automotive industry. This system/platform can deliver current pulses that are controlled by a computer through a software (it is possible to set different parameters such as pulse repetition frequency, duty cycle, and current intensity). For the experiments a power Fabry Perot 1035 laser diode operating in pulse with μφ 1055 nm, Ith = 40 mA, and Iop =750 mA was used with a single-mode SFM 128 optical fiber and an EM type optical coupler connected through alignment. Two types of measurements were conducted to demonstrate the usefulness of the experimental structure. In the first case the amplitude of the voltage pulses was measured at the output of an optical detector with receiving diode in a built-in amplifier with a 50 kΩ load resistance. In the second stage measurements were conducted to determine the optical power injected in the optical fiber and received at the reception cell of a power meter. Another parameter of optical coupling that can be measured using the experimental structure is irradiation. This parameter is very important to determine the optimum cutting angle of the fiber for continuity welding.

  3. Mid-latitude thermospheric wind changes during the St. Patrick's Day storm of 2015 observed by two Fabry-Perot interferometers in China

    Science.gov (United States)

    Huang, Cong; Xu, Ji-Yao; Zhang, Xiao-Xin; Liu, Dan-Dan; Yuan, Wei; Jiang, Guo-Ying

    2018-04-01

    In this work, we utilize thermospheric wind observations by the Fabry-Perot interferometers (FPI) from the Kelan (KL) station (38.7°N, 111.6°E, Magnetic Latitude: 28.9°N) and the Xinglong (XL) station (40.2°N, 117.4°E, Magnetic Latitude: 30.5°N) in central China during the St. Patrick's Day storm (from Mar. 17 to Mar. 19) of 2015 to analyze thermospheric wind disturbances and compare observations with the Horizontal Wind Model 2007 (HWM07). The results reveal that the wind measurements at KL show very similar trends to those at XL. Large enhancements are seen in both the westward and equatorward winds after the severe geomagnetic storm occurred. The westward wind speed increased to a peak value of 75 m/s and the equatorward wind enhanced to a peak value of over 100 m/s. There also exist obvious poleward disturbances in the meridional winds during Mar. 17 to Mar. 19. According to the comparison with HWM07, there exist evident wind speed and temporal differences between FPI-winds and the model outputs in this severe geomagnetic storm. The discrepancies between the observations and HWM07 imply that the empirical model should be used carefully in wind disturbance forecast during large geomagnetic storms and more investigations between measurements and numerical models are necessary in future studies.

  4. Strain and high-temperature discrimination using a Type II fiber Bragg grating and a miniature fiber Fabry-Perot interferometer.

    Science.gov (United States)

    Jiang, Yajun; Yang, Dexing; Yuan, Yuan; Xu, Jian; Li, Dong; Zhao, Jianlin

    2016-08-10

    A novel method for simultaneous measurement of strain and high temperature using a Type II fiber Bragg grating (FBG) and a miniature fiber Fabry-Perot interferometer (MFFPI) is proposed. The MFFPI is produced by fusion splicing a short section of quartz capillary tube with two single-mode fibers, and then it is exposed by a focused femtosecond laser and a phase mask to inscribe a Type II FBG nearby. The reflection spectrum of this sensor is the superposition of the reflection spectrum of the FBG and the interference fringe of the MFFPI. This sensor shows perfect high-temperature and strain responses. Because of the different responses to the uniform variations of strain and temperature, by measuring the reflection peak of FBG and one of the interference dips of the MFFPI, strain and temperature can be simultaneously determined. The resolutions of this particular sensor in measuring strain and temperature are estimated to be ±8.4  μϵ and ±3.3°C, respectively, in the range from 0 to 1122 μϵ and from 23°C to 600°C.

  5. FABRY-PEROT VERSUS SLIT SPECTROPOLARIMETRY OF PORES AND ACTIVE NETWORK: ANALYSIS OF IBIS AND HINODE DATA

    International Nuclear Information System (INIS)

    Judge, Philip G.; De Wijn, Alfred; Tritschler, Alexandra; Uitenbroek, Han; Reardon, Kevin; Cauzzi, Gianna

    2010-01-01

    We discuss spectropolarimetric measurements of photospheric (Fe I 630.25 nm) and chromospheric (Ca II 854.21 nm) spectral lines in and around small magnetic flux concentrations, including a pore. Our long-term goal is to diagnose properties of the magnetic field near the base of the corona. We compare ground-based two-dimensional spectropolarimetric measurem ents with (almost) simultaneous space-based slit spectropolarimetry. We address the question of noise and crosstalk in the measurements and attempt to determine the suitability of Ca II measurements with imaging spectropolarimeters for the determination of chromospheric magnetic fields. The ground-based observations were obtained 2008 May 20, with the Interferometric Bidimensional Spectrometer (IBIS) in spectropolarimetric mode operated at the Dunn Solar Telescope at Sunspot, NM. The space observations were obtained with the Spectro-Polarimeter of the Solar Optical Telescope aboard the Japanese Hinode satellite. The agreement between the near-simultaneous co-spatial IBIS and Hinode Stokes-V profiles at 630.25 nm is excellent, with V/I amplitudes compatible to within 1%. The IBIS QU measurements are affected by residual crosstalk from V, arising from calibration inaccuracies, not from any inherent limitation of imaging spectroscopy. We use a Principal Component Analysis to quantify the detected crosstalk. QU profiles with V crosstalk subtracted are in good agreement with the Hinode measurements, but are noisier owing to fewer collected photons. Chromospheric magnetic fields are notoriously difficult to constrain by polarization of Ca II lines alone. However, we demonstrate that high cadence, high angular resolution monochromatic images of fibrils in Ca II and Hα, seen clearly in IBIS observations, can be used to improve the magnetic field constraints, under conditions of high electrical conductivity. Such work is possible only with time series data sets from two-dimensional spectroscopic instruments such as IBIS, under conditions of good seeing.

  6. Interferometric filters for spectral discrimination in high-spectral-resolution lidar: performance comparisons between Fabry-Perot interferometer and field-widened Michelson interferometer.

    Science.gov (United States)

    Cheng, Zhongtao; Liu, Dong; Yang, Yongying; Yang, Liming; Huang, Hanlu

    2013-11-10

    Thanks to wavelength flexibility, interferometric filters such as Fabry-Perot interferometers (FPIs) and field-widened Michelson interferometers (FWMIs) have shown great convenience for spectrally separating the molecule and aerosol scattering components in the high-spectral-resolution lidar (HSRL) return signal. In this paper, performance comparisons between the FPI and FWMI as a spectroscopic discrimination filter in HSRL are performed. We first present a theoretical method for spectral transmission analysis and quantitative evaluation on the spectral discrimination. Then the process in determining the parameters of the FPI and FWMI for the performance comparisons is described. The influences from the incident field of view (FOV), the cumulative wavefront error induced by practical imperfections, and the frequency locking error on the spectral discrimination performance of the two filters are discussed in detail. Quantitative analyses demonstrate that FPI can produce higher transmittance while the remarkable spectral discrimination is one of the most appealing advantages of FWMI. As a result of the field-widened design, the FWMI still performs well even under the illumination with large FOV while the FPI is only qualified for a small incident angle. The cumulative wavefront error attaches a great effect on the spectral discrimination performance of the interferometric filters. We suggest if a cumulative wavefront error is less than 0.05 waves RMS, it is beneficial to employ the FWMI; otherwise, FPI may be more proper. Although the FWMI shows much more sensitivity to the frequency locking error, it can outperform the FPI given a locking error less than 0.1 GHz is achieved. In summary, the FWMI is very competent in HSRL applications if these practical engineering and control problems can be solved, theoretically. Some other estimations neglected in this paper can also be carried out through the analytical method illustrated herein.

  7. Study of a high finesse four mirrors Fabry Perot cavity for X-rays and Gamma rays production by laser-electron Compton scattering

    International Nuclear Information System (INIS)

    Fedala, Y.

    2008-10-01

    The main goal of this thesis is the study and design of a high finesse Fabry Perot cavity to amplify a laser beam in order to achieve power gains ranging from 10 4 to 10 5 . This cavity is dedicated to the production of intense and monochromatic X-ray for medical applications (medical RADIOTHOMX ring) and gamma rays for a Compton based polarized positron source by Compton scattering of a high power laser beam and electron beam. To increase the brightness of the Compton interaction at the collision points, it is essential to have not only a high power laser beam but also very small laser beam radii at the interaction points. To achieve such performances, 2 scenarios are possible: a concentric 2 mirrors cavity which is mechanically unstable or a 4 mirrors cavity more complex but more stable. We tested numerically mechanical stability and stability of Eigen modes polarization of various planar and non-planar geometries of 4 mirrors cavities. Experimentally, we have developed a four mirrors tetrahedral 'bow-tie' cavity; radii of the order of 20 microns were made. The Eigen modes of such a cavity, in both planar and non planar geometries, were measured and compared with the numerical results. A good agreement was observed. In a second time, the impact of Compton interaction on the transverse dynamics, in the case of the polarized positrons source, and the longitudinal dynamic, in the case of the medical ring of the electron beam was studied. Compton scattering causes energy loss and induces an additional dispersion of energy in electron beam. For the polarized positrons source, 10 collision points are planned. The transport line has been determined and the modelling of the Compton interaction effect with a simple matrix calculation was made. For the medical ring, Compton scattering causes bunch lengthening and the increase of energy dispersion which are to influence the produced X-ray flux. A study of the longitudinal dynamics of the electron beam in the ring was

  8. The Feasibility of Tropospheric and Total Ozone Determination Using a Fabry-perot Interferometer as a Satellite-based Nadir-viewing Atmospheric Sensor. Ph.D. Thesis

    Science.gov (United States)

    Larar, Allen Maurice

    1993-01-01

    Monitoring of the global distribution of tropospheric ozone (O3) is desirable for enhanced scientific understanding as well as to potentially lessen the ill-health impacts associated with exposure to elevated concentrations in the lower atmosphere. Such a capability can be achieved using a satellite-based device making high spectral resolution measurements with high signal-to-noise ratios; this would enable observation in the pressure-broadened wings of strong O3 lines while minimizing the impact of undesirable signal contributions associated with, for example, the terrestrial surface, interfering species, and clouds. The Fabry-Perot Interferometer (FPI) provides high spectral resolution and high throughput capabilities that are essential for this measurement task. Through proper selection of channel spectral regions, the FPI optimized for tropospheric O3 measurements can simultaneously observe a stratospheric component and thus the total O3 column abundance. Decreasing stratospheric O3 concentrations may lead to an increase in biologically harmful solar ultraviolet radiation reaching the earth's surface, which is detrimental to health. In this research, a conceptual instrument design to achieve the desired measurement has been formulated. This involves a double-etalon fixed-gap series configuration FPI along with an ultra-narrow bandpass filter to achieve single-order operation with an overall spectral resolution of approximately .068 cm(exp -1). A spectral region of about 1 cm(exp -1) wide centered at 1054.73 cm(exp -1) within the strong 9.6 micron ozone infrared band is sampled with 24 spectral channels. Other design characteristics include operation from a nadir-viewing satellite configuration utilizing a 9 inch (diameter) telescope and achieving horizontal spatial resolution with a 50 km nadir footprint. A retrieval technique has been implemented and is demonstrated for a tropical atmosphere possessing enhanced tropospheric ozone amounts. An error analysis

  9. Compact vibration isolation and suspension for Australian International Gravitational Observatory: Performance in a 72 m Fabry Perot cavity

    Science.gov (United States)

    Barriga, P.; Dumas, J. C.; Woolley, A. A.; Zhao, C.; Blair, D. G.

    2009-11-01

    This paper describes the first demonstration of vibration isolation and suspension systems, which have been developed with view to application in the proposed Australian International Gravitational Observatory. In order to achieve optimal performance at low frequencies new components and techniques have been combined to create a compact advanced vibration isolator structure. The design includes two stages of horizontal preisolation and one stage of vertical preisolation with resonant frequencies ˜100 mHz. The nested structure facilitates a compact design and enables horizontal preisolation stages to be configured to create a superspring configuration, where active feedback can enable performance close to the limit set by seismic tilt coupling. The preisolation stages are combined with multistage three-dimensional (3D) pendulums. Two isolators suspending mirror test masses have been developed to form a 72 m optical cavity with finesse ˜700 in order to test their performance. The suitability of the isolators for use in suspended optical cavities is demonstrated through their ease of locking, long term stability, and low residual motion. An accompanying paper presents the local control system and shows how simple upgrades can substantially improve residual motion performance.

  10. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  11. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    Energy Technology Data Exchange (ETDEWEB)

    Podoskin, A. A., E-mail: podoskin@mail.ioffe.ru; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

    2015-08-15

    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  12. Active Stabilization of a Diode Laser Injection Lock

    OpenAIRE

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

  13. Combination of highly nonlinear fiber, an optical bandpass filter, and a Fabry-Perot filter to improve the signal-to-noise ratio of a supercontinuum continuous-wave optical source.

    Science.gov (United States)

    Nan, Yinbo; Huo, Li; Lou, Caiyun

    2005-05-20

    We present a theoretical study of a supercontinuum (SC) continuous-wave (cw) optical source generation in highly nonlinear fiber and its noise properties through numerical simulations based on the nonlinear Schrödinger equation. Fluctuations of pump pulses generate substructures between the longitudinal modes that result in the generation of white noise and then in degradation of coherence and in a decrease of the modulation depths and the signal-to-noise ratio (SNR). A scheme for improvement of the SNR of a multiwavelength cw optical source based on a SC by use of the combination of a highly nonlinear fiber (HNLF), an optical bandpass filter, and a Fabry-Perot (FP) filter is presented. Numerical simulations show that the improvement in modulation depth is relative to the HNLF's length, the 3-dB bandwidth of the optical bandpass filter, and the reflection ratio of the FP filter and that the average improvement in modulation depth is 13.7 dB under specified conditions.

  14. Five-beam Fabry-Perot velocimeter

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Goosman, D.G.; Collins, L.F.

    1996-03-04

    Velocimetry is useful in diagnosing many properties of high-explosive (HE) systems. The shock pressure of the detonation wave in HE is often measured by noting the velocity of an interface between the HE and a known material. Properties of the equation of state (EOS) of an explosive can be measured in a cylinder event using a combination of velocimetry and other diagnostics. Point-initiated explosions driving large plates give additional information regarding HE EOS. Hemispherical booster shots give quantitative data pertaining to booster performance. Velocimetry is used routinely to measure the performance of detonators. Velocimetry will be a particularly effective tool in cylinder shots, flat plate, and booster shots to determine the effects of aging on the EOS of explosive components in stockpile devices.

  15. Semiconductor Quantum Electron Wave Transport, Diffraction, and Interference: Analysis, Device, and Measurement.

    Science.gov (United States)

    Henderson, Gregory Newell

    Semiconductor device dimensions are rapidly approaching a fundamental limit where drift-diffusion equations and the depletion approximation are no longer valid. In this regime, quantum effects can dominate device response. To increase further device density and speed, new devices must be designed that use these phenomena to positive advantage. In addition, quantum effects provide opportunities for a new class of devices which can perform functions previously unattainable with "conventional" semiconductor devices. This thesis has described research in the analysis of electron wave effects in semiconductors and the development of methods for the design, fabrication, and characterization of quantum devices based on these effects. First, an exact set of quantitative analogies are presented which allow the use of well understood optical design and analysis tools for the development of electron wave semiconductor devices. Motivated by these analogies, methods are presented for modeling electron wave grating diffraction using both an exact rigorous coupled-wave analysis and approximate analyses which are useful for grating design. Example electron wave grating switch and multiplexer designs are presented. In analogy to thin-film optics, the design and analysis of electron wave Fabry-Perot interference filters are also discussed. An innovative technique has been developed for testing these (and other) electron wave structures using Ballistic Electron Emission Microscopy (BEEM). This technique uses a liquid-helium temperature scanning tunneling microscope (STM) to perform spectroscopy of the electron transmittance as a function of electron energy. Experimental results show that BEEM can resolve even weak quantum effects, such as the reflectivity of a single interface between materials. Finally, methods are discussed for incorporating asymmetric electron wave Fabry-Perot filters into optoelectronic devices. Theoretical and experimental results show that such structures could

  16. Optical-feedback semiconductor laser Michelson interferometer for displacement measurements with directional discrimination

    International Nuclear Information System (INIS)

    Rodrigo, Peter John; Lim, May; Saloma, Caesar

    2001-01-01

    An optical-feedback semiconductor laser Michelson interferometer (OSMI) is presented for measuring microscopic linear displacements without ambiguity in the direction of motion. The two waves from the interferometer arms, one from the reference mirror and the other from the reflecting moving target, are fed back into the lasing medium (λ=830 nm), causing variations in the laser output power. We model the OSMI into an equivalent Fabry-Perot resonator and derive the dependence of the output power (and the junction voltage) on the path difference between the two interferometer arms. Numerical and experimental results consistently show that the laser output power varies periodically (period, λ/2) with path difference. The output power variation exhibits an asymmetric behavior with the direction of motion, which is used to measure, at subwavelength resolution, the displacement vector (both amplitude and direction) of the moving sample. Two samples are considered in the experiments: (i) a piezoelectric transducer and (ii) an audio speaker

  17. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  18. Advanced materials for the optical delay line of frequency pulse modulator on the basis of semiconductor laser

    International Nuclear Information System (INIS)

    Abrarov, S.M.

    1999-01-01

    In the paper some materials which can be sued as an optical delay line of the pulse frequency modulator are considered. The structure and the principle are described as a modulator consisting of a laser diode with two Fabry Perot resonators and an optical wave guide providing a feedback loop. The optical wave guide fulfills the function of delay line and links the two resonators. The pulse sequence of the radiation of the semiconductor laser arises due to failure and recovery of optical generation. The pulse frequency modulation can be carried out by the action of electrical tension field on the electro optic martial of the wave guide. The selection of three electro-optic crystals for making of the optical wave guide of the considered modulator is justified. (author)

  19. Optical filter finesses enhancement based on nested coupled cavities and active medium

    Science.gov (United States)

    Adib, George A.; Sabry, Yasser M.; Khalil, Diaa

    2016-04-01

    Optical filters with relatively large FSR and narrow linewidth are simultaneously needed for different applications. The ratio between the FSR and the 3-dB linewidth is given by finesse of the filter, which is solely determined by the different energy loss mechanisms limited by the technology advancement. In this work, we present a novel coupled-cavity configuration embedding an optical filter and a gain medium; allowing an overall finesse enhancement and simultaneous FSR and 3-dB linewidth engineering beyond the technological limits of the filter fabrication method. The configuration consists of two resonators. An active ring resonator comprises an optical gain medium and a passive resonator. In one configuration, the optical filter is the passive resonator itself. In a second configuration, the passive resonator is another ring resonator that embeds the optical filter. The presented configurations using a semiconductor optical amplifier are applied one time to a mechanically Fabry-Perot filter in the first presented configuration; and a second time to a fiber ring filter in the second presented configuration. The mechanical filter has an original 3-dB linewidth of 1nm and an FSR that is larger than 100nm while the enhanced linewidth is about 0.3nm. The fiber ring filter length is 4 m and directional coupler ratios of 90/10corresponding to a 3-dBlinewidth of about 4MHz and an FSR of 47 MHz. The enhanced 3- dBlinewidth of the overall filter configuration is 200kHz, demonstrating finesse enhancement up to20 times the original finesse of the filter.

  20. Fabry-Perot MEMS Accelerometers for Advanced Seismic Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Chisum, Brad [Lumedyne Technologies Incorporated, San Diego, CA (United States)

    2015-05-31

    This report summarizes the technical achievements that occurred over the duration of the project. On November 14th, 2014, Lumedyne Technologies Incorporated was acquired. As a result of the acquisition, the work toward seismic imaging applications was suspended indefinitely. This report captures the progress achieved up to that time.

  1. Diamond-based Fabry-Perot microcavities for quantum networks

    NARCIS (Netherlands)

    Bogdanovic, S.

    2017-01-01

    A quantumnetwork would allow the distribution of a quantum state over many spatially separated quantum nodes which individually possess the ability to generate, process and store quantum information. Connecting these nodes through quantum communication channels would enable sending quantum

  2. Activity coefficients of electrons and holes in semiconductors

    International Nuclear Information System (INIS)

    Orazem, M.E.; Newman, J.

    1984-01-01

    Dilute-solution transport equations with constant activity coefficients are commonly used to model semiconductors. These equations are consistent with a Boltzmann distribution and are invalid in regions where the species concentration is close to the respective site concentration. A more rigorous treatment of transport in a semiconductor requires activity coefficients which are functions of concentration. Expressions are presented for activity coefficients of electrons and holes in semiconductors for which conduction- and valence-band energy levels are given by the respective bandedge energy levels. These activity coefficients are functions of concentration and are thermodynamically consistent. The use of activity coefficients in macroscopic transport relationships allows a description of electron transport in a manner consistent with the Fermi-Dirac distribution

  3. Active stabilization of a diode laser injection lock

    Energy Technology Data Exchange (ETDEWEB)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep [Department of Physics, University of Washington, P.O. Box 351560, Seattle, Washington 98195-1560 (United States)

    2016-06-15

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  4. Active stabilization of a diode laser injection lock.

    Science.gov (United States)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  5. Active stabilization of a diode laser injection lock

    International Nuclear Information System (INIS)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  6. Low-frequency active surface plasmon optics on semiconductors

    NARCIS (Netherlands)

    Gómez Rivas, J.; Kuttge, M.; Kurz, H.; Haring Bolivar, P.; Sánchez-Gil, J.A.

    2006-01-01

    A major challenge in the development of surface plasmon optics or plasmonics is the active control of the propagation of surface plasmon polaritons (SPPs). Here, we demonstrate the feasibility of low-frequency active plasmonics using semiconductors. We show experimentally that the Bragg scattering

  7. Rapid electrostatics-assisted layer-by-layer assembly of near-infrared-active colloidal photonic crystals.

    Science.gov (United States)

    Askar, Khalid; Leo, Sin-Yen; Xu, Can; Liu, Danielle; Jiang, Peng

    2016-11-15

    Here we report a rapid and scalable bottom-up technique for layer-by-layer (LBL) assembling near-infrared-active colloidal photonic crystals consisting of large (⩾1μm) silica microspheres. By combining a new electrostatics-assisted colloidal transferring approach with spontaneous colloidal crystallization at an air/water interface, we have demonstrated that the crystal transfer speed of traditional Langmuir-Blodgett-based colloidal assembly technologies can be enhanced by nearly 2 orders of magnitude. Importantly, the crystalline quality of the resultant photonic crystals is not compromised by this rapid colloidal assembly approach. They exhibit thickness-dependent near-infrared stop bands and well-defined Fabry-Perot fringes in the specular transmission and reflection spectra, which match well with the theoretical calculations using a scalar-wave approximation model and Fabry-Perot analysis. This simple yet scalable bottom-up technology can significantly improve the throughput in assembling large-area, multilayer colloidal crystals, which are of great technological importance in a variety of optical and non-optical applications ranging from all-optical integrated circuits to tissue engineering. Copyright © 2016 Elsevier Inc. All rights reserved.

  8. 78 FR 68814 - Subzone 183B; Authorization of Production Activity; Samsung Austin Semiconductor, LLC...

    Science.gov (United States)

    2013-11-15

    ... DEPARTMENT OF COMMERCE Foreign-Trade Zones Board [B-70-2013] Subzone 183B; Authorization of Production Activity; Samsung Austin Semiconductor, LLC (Semiconductors); Austin, Texas On June 26, 2013, Samsung Austin Semiconductor, LLC submitted a notification of proposed export production activity to the...

  9. Activation of molecular catalysts using semiconductor quantum dots

    Science.gov (United States)

    Meyer, Thomas J [Chapel Hill, NC; Sykora, Milan [Los Alamos, NM; Klimov, Victor I [Los Alamos, NM

    2011-10-04

    Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

  10. Active RF Pulse Compression Using An Electrically Controlled Semiconductor Switch

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Jiquan; Tantawi, Sami; /SLAC

    2007-01-10

    First we review the theory of active pulse compression systems using resonant delay lines. Then we describe the design of an electrically controlled semiconductor active switch. The switch comprises an active window and an overmoded waveguide three-port network. The active window is based on a four-inch silicon wafer which has 960 PIN diodes. These are spatially combined in an overmoded waveguide. We describe the philosophy and design methodology for the three-port network and the active window. We then present the results of using this device to compress 11.4 GHz RF signals with high compression ratios. We show how the system can be used with amplifier like sources, in which one can change the phase of the source by manipulating the input to the source. We also show how the active switch can be used to compress a pulse from an oscillator like sources, which is not possible with passive pulse compression systems.

  11. Semiconductor plasmonic crystals : active control of THz extinction

    NARCIS (Netherlands)

    Schaafsma, M.C.; Gomez Rivas, J.

    2013-01-01

    We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are

  12. Optical properties of semiconductors quantum microcavity structures

    International Nuclear Information System (INIS)

    Afshar, A.M.

    1996-12-01

    The principal phenomenon investigated in this thesis is vacuum Rabi coupling in semiconductor microcavity structures. In these structures quantum well excitons are embedded in a Fabry - Perot like cavity, defined by two semiconductor dielectric mirrors. In such a system the coupled exciton and cavity photon mode form a mixed - mode polariton, where on - resonance there are two branches, each having 50% exciton and 50% photon character. The separation between the upper and lower branches is a measure of the coupling strength where the strength is dependent on the exciton oscillator strength. This interaction is known as vacuum Rabi coupling, and clear anticrossing is seen when the exciton is tuned through the cavity. In our reflectivity experiments we demonstrate control of the coupling between the cavity mode and the exciton by varying temperature, applied electric or magnetic field. Modelling of the reflectivity spectra and the tuning was done using a Transfer Matrix Reflectivity (TMR) model or a linear dispersion model, where in both cases the excitons are treated as Lorentz oscillators. Temperature tuning is achieved because exciton energy decreases with temperature at a much faster rate than the cavity mode. We have demonstrated vacuum Rabi coupling of the cavity mode with both the heavy - hole and light - hole excitons. Electric field tuning is achieved via the quantum confined Stark effect which decreases the exciton energy with increasing field, whilst at the same time the cavity mode energy remains constant. A study of how the electric field reduction of exciton oscillator strength reduces the vacuum Rabi coupling strength is performed. We report the first observation in a semiconductor structure of motional narrowing, seen in both electric field and in temperature tuning experiments at high magnetic field. In magnetic field studies we show how magnetic field induced increase in exciton oscillator strength affects the vacuum Rabi coupling. We also show by

  13. Metal-core/semiconductor-shell nanocones for broadband solar absorption enhancement.

    Science.gov (United States)

    Zhou, Lin; Yu, Xiaoqiang; Zhu, Jia

    2014-02-12

    Nanostructure-based photovoltaic devices have exhibited several advantages, such as reduced reflection, extraordinary light trapping, and so forth. In particular, semiconductor nanostructures provide optical modes that have strong dependence on the size and geometry. Metallic nanostructures also attract a lot of attention because of the appealing plasmonic effect on the near-field enhancement. In this study, we propose a novel design, the metal-core/semiconductor-shell nanocones with the core radius varying in a linearly gradient style. With a thin layer of semiconductor absorber coated on a metallic cone, such a design can lead to significant and broadband absorption enhancement across the entire visible and near-infrared solar spectrum. As an example of demonstration, a layer of 16 nm thick crystalline silicon (c-Si) coated on a silver nanocone can absorb 27% of standard solar radiation across a broad spectral range of 300-1100 nm, which is equivalent to a 700 nm thick flat c-Si film. Therefore, the absorption enhancement factor approaching the Yablonovitch limit is achieved with this design. The significant absorption enhancement can be ascribed to three types of optical modes, that is, Fabry-Perot modes, plasmonic modes, and hybrid modes that combine the features of the previous two. In addition, the unique nanocone geometry enables the linearly gradient radius of the semiconductor shell, which can support multiple optical resonances, critical for the broadband absorption. Our design may find general usage as elements for the low cost, high efficiency solar conversion and water-splitting devices.

  14. A Kinematic Link Between Boxy Bulges, Stellar Bars, and Nuclear Activity in NGC 3079 and NGC 4388

    Science.gov (United States)

    Veilleux, S.; Bland-Hawthrorn, J.; Cecil, Gerald

    1999-01-01

    We present direct kinematic evidence for bar streaming in two active galaxies with boxy stellar bulges. The Hawaii Imaging Fabry-Perot Interferometer was used on the Canada-France-Hawaii 3.6-m telescope and the University of Hawaii 2.2-m telescope to derive the two-dimensional velocity field of the line-emitting gas in the disks of the Sc galaxy NGC 3079 and the Sb galaxy NGC 4388. In contrast to previous work based on long-slit data, the detection of the bar potential from the Fabry-Perot data does not rely on the existence of inner Lindblad resonances or strong bar-induced shocks. Simple kinematic models which approximate the intrinsic gas orbits as nonintersecting, inclined elliptical annuli that conserve angular momentum characterize the observed velocity fields. In NGC 3079, bar streaming motions with moderately eccentric orbits (e = b/a approx. 0.7) aligned along PA = 130 deg. intrinsic to the disk (PA = 97 deg. on the sky) are detected out to R(sub b) = 3.6 kpc. The orbits become increasingly circular beyond that radius (e = 1 at R(sub d) approx. = 6 kpc). The best model for NGC 4388 includes highly eccentric orbits (e approx. 0.3) for R(sub) less than or equal to 1.5 kpc which are aligned along PA = 135 deg. intrinsic to the disk (PA = 100 deg. on the sky). The observed "spiral arms" are produced by having the orbits become increasingly circular from the ends of the bar to the edge of the disk (R(sub d) approx. = 5 kpc), and the intrinsic bar PA shifting from 135 deg. to 90 deg.. Box-shaped bulges in both NGC 3079 and NGC 4388 are confirmed using new near-infrared images to reduce dust obscuration. Morphological analysis of starlight in these galaxies is combined with the gas kinematics derived from the Fabry-Perot spectra to test evolutionary models of stellar bars that involve transitory boxy bulges, and to quantify the importance of such bars in fueling active nuclei. Our data support the evolutionary bar models, but fail to prove convincingly that the

  15. Neutron activation determination of phosphorus in semiconductor materials

    International Nuclear Information System (INIS)

    Verevkin, G.V.; Gil'bert, Eh.N.; Gol'dshtejn, M.M.; Yudelevich, I.G.; Yurchenko, V.K.

    1976-01-01

    The solvent extraction of molybdophosphoric acid (MPA) with benzene and dichloroethane solutions of dioctylsulphoxide has been studied. A neutron-activation method has been worked out of determining phosphorus in semiconductor silicon, high purity gallium, and homoepitaxial films of gallium arsenide. The method is based on separation of radiochemically pure phosphorus in the form of MPA by extraction with 0.2 M solution of dioctylsulphoxide in benzene and measurement of 32 P activity on a liquid scintillation spectrometer. The method makes it possible to determine phosphorus in the materials enumerated with a limit of detection of 1.9x10 -10 g and a relative standard deviation of not more than 0.05

  16. Active mode-locking of mid-infrared quantum cascade lasers with short gain recovery time.

    Science.gov (United States)

    Wang, Yongrui; Belyanin, Alexey

    2015-02-23

    We investigate the dynamics of actively modulated mid-infrared quantum cascade lasers (QCLs) using space- and time-domain simulations of coupled density matrix and Maxwell equations with resonant tunneling current taken into account. We show that it is possible to achieve active mode locking and stable generation of picosecond pulses in high performance QCLs with a vertical laser transition and a short gain recovery time by bias modulation of a short section of a monolithic Fabry-Perot cavity. In fact, active mode locking in QCLs with a short gain recovery time turns out to be more robust to the variation of parameters as compared to previously studied lasers with a long gain recovery time. We investigate the effects of spatial hole burning and phase locking on the laser output.

  17. The line-emitting gas in active galaxies - A probe of the nuclear engine

    Science.gov (United States)

    Veilleux, Sylvain

    1993-01-01

    This paper reviews some of the basic questions regarding the structure of the engine powering active galactic nuclei (AGN), the nature of the interaction between the AGN and the host galaxy, and the origin and evolution of AGN. The study of the dynamics and physical characteristics of the line-emitting gas in these objects has proven fruitful in addressing many of these issues. Recent advances in optical and infrared detector technology combined with the development of superior ground-based instruments have produced efficient new tools for the study of the line-emitting gas on nuclear and Galactic scales. Programs which take advantage of two of these new techniques, Fabry-Perot imaging spectroscopy and infrared spectroscopy, are described in this paper. The origin of nuclear activity in galaxies is also addressed in a third project which aims at determining the nature of luminous infrared galaxies.

  18. Semiconductor plasmonic crystals: active control of THz extinction

    International Nuclear Information System (INIS)

    Schaafsma, M C; Rivas, J Gómez

    2013-01-01

    We investigate theoretically the enhanced THz extinction by periodic arrays of semiconductor particles. Scattering particles of doped semiconductors can sustain localized surface plasmon polaritons, which can be diffractively coupled giving rise to surface lattice resonances. These resonances are characterized by a large extinction and narrow bandwidth, which can be tuned by controlling the charge carrier density in the semiconductor. The underlaying mechanism leading to this tuneability is explained using the coupled dipole approximation and considering GaAs as the semiconductor. The enhanced THz extinction in arrays of GaAs particles could be tuned in a wide range by optical pumping of charge carriers. (invited article)

  19. Controlling kilometre-scale interferometric detectors for gravitational wave astronomy: Active phase noise cancellation using EOMs

    Science.gov (United States)

    Arnaud, N.; Balembois, L.; Bizouard, M. A.; Brisson, V.; Casanueva, J.; Cavalier, F.; Davier, M.; Frey, V.; Hello, P.; Huet, D.; Leroy, N.; Loriette, V.; Maksimovic, I.; Robinet, F.

    2017-02-01

    The second generation of Gravitational waves detectors are kilometric Michelson interferometers with additional recycling Fabry-Perot cavities on the arms and ​the addition of two more recycling cavities to enhance their sensitivity, with the particularity that all the mirrors are suspended. In order to control them a new technique, based on the use of auxiliary lasers, has been developed to bring the interferometer to its working point, with all the cavities on their resonance, in an adiabatic way. The implementation of this technique in Advanced Virgo is under preparation and the propagation of a stable laser through a 3-km optical fibre is one of the most problematic issues. A new technique of active phase noise cancellation based on the use of Electro Optical Modulators has been developed, and a first prototype has been successfully tested.

  20. Analysis of quantum semiconductor heterostructures by ballistic electron emission spectroscopy

    Science.gov (United States)

    Guthrie, Daniel K.

    1998-09-01

    complementary electron-wave Fabry-Perot quantum interference filters which included both a half- and a quarter-electron-wavelength resonant device. High-resolution, low noise, BEES spectra obtained on these devices at low-temperature were used to measure the zero-bias electron transmittance as a function of injected energy for these resonant devices. Finally, by analyzing BEES spectra taken at various spatial locations, one monolayer variations in the thickness of a buried quantum well have been detected.

  1. All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier

    Science.gov (United States)

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

    2006-09-01

    By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

  2. Nano-/microstructure improved photocatalytic activities of semiconductors.

    Science.gov (United States)

    Zhao, Tianyi; Zhao, Yong; Jiang, Lei

    2013-10-13

    Photocatalysis has emerged as a promising technique owing to its valuable applications in environmental purification. With the demand of building effective photocatalyst materials, semiconductor investigation experienced a developing process from simple chemical modification to complicated morphology design. In this review, the general relationship between morphology structures and photocatalytic properties is mainly discussed. Various nano-/microsized structures from zero- to three-dimensional are discussed, and the photocatalytic efficiency correspon- ding to the structures is analysed. The results showed that simple structures can be easily obtained and can facilitate chemical modification, whereas one- or three-dimensional structures can provide structure-enhanced properties such as surface area increase, multiple reflections of UV light, etc. Those principles of structure-related photocatalytic properties will afford basic ideology in designing new photocatalytic materials with more effective catalytic properties.

  3. Modeling of gain saturation effects in active semiconductor photonic crystal waveguides

    DEFF Research Database (Denmark)

    Chen, Yaohui; Mørk, Jesper

    2012-01-01

    In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated.......In this paper, we present a theoretical analysis of slow-light enhanced light amplification in an active semiconductor photonic crystal line defect waveguide. The impact of enhanced light-matter interactions on carrier-depletion-induced modal gain saturation is investigated....

  4. General and efficient method for calculating modulation ressponses and noise spectra of active semiconductor waveguides

    DEFF Research Database (Denmark)

    Blaaberg, Søren; Öhman, Filip; Mørk, Jesper

    2008-01-01

    We present a theoretical method for obtaining small-signal responses in a spatially resolved active semiconductor waveguide including finite end-facet reflectivities and amplified spontaneous emission. RF-modulation responses and output noise spectra of an SOA are shown....

  5. Application of a fiber Fabry-Perot interferometer sensor for receiving SH-EMAT signals

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jin Hyuk; Kim, Dae Hyun; Park, Ik Keun [Seoul National University of Technology, Seoul (Korea, Republic of)

    2014-04-15

    Shear horizontal (SH) waves propagate as a type of plate wave in a thin sheet. The dispersion characteristics of SH waves can be used for signal analysis. Therefore, SH-waves are useful for monitoring the structural health of a thin-sheet-structure. An electromagnetic acoustic transducer (EMAT), which is a non-contact ultrasonic transducer, can generate SH-waves easily by varying the shape and array of magnets and coils. Therefore, an EMAT can be applied to an automated ultrasonic testing system for structural health monitoring. When used as a sensor, however, the EMAT has a weakness in that electromagnetic interference (EMI) noise can occur easily in the automated system because of motors and electric devices. Alternatively, a fiber optic sensor works well in the same environment with EMI noise because it uses a light signal instead of an electric signal. In this paper, a fiber Fabry-Prot interferometer (FFPI) was proposed as a sensor to receive the SH-waves generated by an EMAT. A simple test was performed to verify the performance of the FFPI sensor. It is thus shown that the FFPI can receive SH-wave signals clearly.

  6. Rugged Low Temperature Actuators for Tunable Fabry Perot Optical Filters, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Why are rugged, low temperature actuator materials important? By themselves, they are useless; however, when fabricated into thin films and integrated into optical...

  7. Musical instrument recordings made with a fiber Fabry-Perot cavity: photonic guitar pickup.

    Science.gov (United States)

    Ballard, Nicholas; Paz-Soldan, Daniel; Kung, Peter; Loock, Hans-Peter

    2010-04-10

    A 1 cm long, low-finesse fiber-optic cavity was used as a transducer for the vibrations of the soundboard of an acoustic guitar and of a violin. The reflected light is detected and then amplified and recorded using conventional audio instrumentation. The fiber-optic pickup is found to have a high response range in both amplitude (up to 100 microm displacement) and audio frequency (DC to 20 kHz) and good linearity up to a displacement of 225 microm. The audio noise is found to arise from the fiber-optic cables and, to a lesser extent, from the laser and laser driver.

  8. Transmission-enabled fiber Fabry-Perot cavity based on a deeply etched slotted micromirror.

    Science.gov (United States)

    Othman, Muhammad A; Sabry, Yasser M; Sadek, Mohamed; Nassar, Ismail M; Khalil, Diaa A

    2018-06-01

    In this work, we report the analysis, fabrication, and characterization of an optical cavity built using a Bragg-coated fiber (BCF) mirror and a metal-coated microelectromechanical systems (MEMS) slotted micromirror, where the latter allows transmission output from the cavity. Theoretical modeling, using Fourier optics analysis for the cavity response based on tracing the propagation of light back and forth between the mirrors, is presented. Detailed simulation analysis is carried out for the spectral response of the cavity under different design conditions. MEMS chips of the slotted micromirror are fabricated using deep reactive ion etching of a silicon-on-insulator substrate with different device-etching depths of 150 μm and 80 μm with aluminum and gold metal coating, respectively. The cavity is characterized as an optical filter using a BCF with reflectivity that is larger than 95% in a 300 nm range across the E-band and the L-band. Versatile filter characteristics were obtained for different values of the MEMS micromirror slit width and cavity length. A free spectral range (FSR) of about 33 nm and a quality factor of about 196 were obtained for a 5.5 μm width aluminum slit, while an FSR of about 148 nm and a quality factor of about 148 were obtained for a 1.5 μm width gold slit. The presented structure opens the door for wide spectral response transmission-type MEMS filters.

  9. Transfer function of analog fiber-optic systems driven by Fabry-Perot lasers: comment

    Science.gov (United States)

    Gyula, Veszely

    2006-10-01

    A bad notation makes difficult the understanding of the paper of Capmany et al. [J. Opt. Soc. Am. B22, 2099 (2005)]. The reason is that the real time function and the complex time function run into one another.

  10. Ultra-Precise Measurement of Distance by Fabry-Perot Resonator

    Czech Academy of Sciences Publication Activity Database

    Číp, Ondřej; Petrů, František; Lazar, Josef; Buchta, Zdeněk

    T118, - (2005), s. 45-47 ISSN 0031-8949 R&D Projects: GA ČR(CZ) GP102/02/P122 Keywords : length measurements * laser interferometer * optical resonator Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.661, year: 2004

  11. Highly directive Fabry-Perot leaky-wave nanoantennas based on optical partially reflective surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Lorente-Crespo, M.; Mateo-Segura, C., E-mail: C.Mateo-Segura@hw.ac.uk [Institute of Sensors, Signals and Systems, Heriot-Watt University, EH14 4AS Edinburgh (United Kingdom)

    2015-05-04

    Nanoantennas enhance the conversion between highly localized electromagnetic fields and far-field radiation. Here, we investigate the response of a nano-patch partially reflective surface backed with a silver mirror to an optical source embedded at the centre of the structure. Using full wave simulations, we demonstrate a two orders of magnitude increased directivity compared to the isotropic radiator, 50% power confinement to a 13.8° width beam and a ±16 nm bandwidth. Our antenna does not rely on plasmonic phenomena thus reducing non-radiative losses and conserving source coherence.

  12. Ring cavity surface emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Mujagic, E.

    2010-01-01

    m. Characterizations indicate a high temperature operation of MIR ring-CSELs along with a reduction in threshold current density of MIR devices by 35% as compared to Fabry-Perot devices. The lower operating currents in ring-CSELs became noticeable in continuous wave (CW) operation with a 50K higher maximum temperature than in FP lasers. A two-fold enhancement in radiation efficiency was obtained in MIR and THz ring-CSELs as compared to FP emitters. The DFB grating on top of the resonator gives rise to a single-mode operation of ring-CSELs for all operation currents. Linear wavelength tuning is achieved by fabricating different gratings periods as well as by a variation in temperature. The slope efficiency and the threshold current density does not seem to significantly depend on the grating period, which is attributed to the absence of mirrors. The incorporated circular waveguide geometry along with the surface emitting character gives rise to symmetric and low divergence azimuthally polarized optical beams. The recorded far-fields indicate a ring shaped interference patterns with lobe separations of 1.34 o and 14.14 o for MIR and THz ring-CSELs, respectively. Fabrication of detuned gratings led to a grating period induced as well as to a tunable wavelength induced beam shaping, with beam patterns ranging from spot to wide ring cross sections. (author) [de

  13. Passivation of electrically active centers by Hydrogen and Lithium in Semiconductors

    CERN Multimedia

    2002-01-01

    The hyperfine technique of Perturbed Angular Correlation Spectroscopy (PAC) has proven to be excellently suited for the microscopic investigation of impurity complexes in semiconductors. But this method is seriously limited by the small number of chemically different isotopes which are suitable for PAC measurements and represent electrically active centers in semiconductors. This bottleneck can be widely overcome by the ISOLDE facility which provides a great variety of shortliving PAC isotopes. The probe atom $^{111m}$Cd, provided by ISOLDE opened the first successful access to PAC investigations of III-V compounds and enabled also the first PAC experiments on double acceptors in silicon and germamum. \\\\ \\\\ At the new ISOLDE facility our experiments were concentrated on the passivation of electrically active centres by hydrogen and lithium in Si, Ge and III-V compounds. Experiments on $^{111m}$Cd in Ge revealed the formation of two different acceptor hydrogen and two different acceptor lithium complexes respe...

  14. Surface properties and photocatalytic activity of KTaO3, CdS, MoS2 semiconductors and their binary and ternary semiconductor composites.

    Science.gov (United States)

    Bajorowicz, Beata; Cybula, Anna; Winiarski, Michał J; Klimczuk, Tomasz; Zaleska, Adriana

    2014-09-24

    Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD), UV-Vis diffuse reflectance spectroscopy (DRS), scanning electron microscopy (SEM), Brunauer-Emmett-Teller (BET) specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

  15. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    International Nuclear Information System (INIS)

    Chang-Hwan Kim

    2003-01-01

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms

  16. Optically Detected Magnetic Resonance and Thermal Activation Spectroscopy Study of Organic Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang-Hwan [Iowa State Univ., Ames, IA (United States)

    2003-01-01

    Organic electronic materials are a new class of emerging materials. Organic light emitting devices (OLEDs) are the most promising candidates for future flat panel display technologies. The photophysical characterization is the basic research step one must follow to understand this new class of materials and devices. The light emission properties are closely related to the transport properties of these materials. The objective of this dissertation is to probe the relation between transport and photophysical properties of organic semiconductors. The transport characteristics were evaluated by using thermally stimulated current and thermally stimulated luminescence techniques. The photoluminescence detected magnetic resonance and photoluminescence quantum yield studies provide valuable photophysical information on this class of materials. OLEDs are already in the market. However, detailed studies on the degradation mechanisms are still lacking. Since both optically detected magnetic resonance and thermal activation spectroscopy probe long-lived defect-related states in organic semiconductors, the combined study generates new insight on the OLED operation and degradation mechanisms.

  17. Surface Properties and Photocatalytic Activity of KTaO3, CdS, MoS2 Semiconductors and Their Binary and Ternary Semiconductor Composites

    Directory of Open Access Journals (Sweden)

    Beata Bajorowicz

    2014-09-01

    Full Text Available Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD, UV-Vis diffuse reflectance spectroscopy (DRS, scanning electron microscopy (SEM, Brunauer–Emmett–Teller (BET specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

  18. Correlation of Photocatalytic Activity with Band Structure of Low-dimensional Semiconductor Nanostructures

    Science.gov (United States)

    Meng, Fanke

    Photocatalytic hydrogen generation by water splitting is a promising technique to produce clean and renewable solar fuel. The development of effective semiconductor photocatalysts to obtain efficient photocatalytic activity is the key objective. However, two critical reasons prevent wide applications of semiconductor photocatalysts: low light usage efficiency and high rates of charge recombination. In this dissertation, several low-dimensional semiconductors were synthesized with hydrothermal, hydrolysis, and chemical impregnation methods. The band structures of the low-dimensional semiconductor materials were engineered to overcome the above mentioned two shortcomings. In addition, the correlation between the photocatalytic activity of the low-dimensional semiconductor materials and their band structures were studied. First, we studied the effect of oxygen vacancies on the photocatalytic activity of one-dimensional anatase TiO2 nanobelts. Given that the oxygen vacancy plays a significant role in band structure and photocatalytic performance of semiconductors, oxygen vacancies were introduced into the anatase TiO2 nanobelts during reduction in H2 at high temperature. The oxygen vacancies of the TiO2 nanobelts boosted visible-light-responsive photocatalytic activity but weakened ultraviolet-light-responsive photocatalytic activity. As oxygen vacancies are commonly introduced by dopants, these results give insight into why doping is not always beneficial to the overall photocatalytic performance despite increases in absorption. Second, we improved the photocatalytic performance of two-dimensional lanthanum titanate (La2Ti2 O7) nanosheets, which are widely studied as an efficient photocatalyst due to the unique layered crystal structure. Nitrogen was doped into the La2Ti2O7 nanosheets and then Pt nanoparticles were loaded onto the La2Ti2O7 nanosheets. Doping nitrogen narrowed the band gap of the La2Ti 2O7 nanosheets by introducing a continuum of states by the valence

  19. Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

    Science.gov (United States)

    Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

    2018-03-01

    In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

  20. Impact of slow-light enhancement on optical propagation in active semiconductor photonic crystal waveguides

    DEFF Research Database (Denmark)

    Chen, Yaohui; de Lasson, Jakob Rosenkrantz; Gregersen, Niels

    2015-01-01

    We derive and validate a set of coupled Bloch wave equations for analyzing the reflection and transmission properties of active semiconductor photonic crystal waveguides. In such devices, slow-light propagation can be used to enhance the material gain per unit length, enabling, for example......, the realization of short optical amplifiers compatible with photonic integration. The coupled wave analysis is compared to numerical approaches based on the Fourier modal method and a frequency domain finite element technique. The presence of material gain leads to the build-up of a backscattered field, which...... is interpreted as distributed feedback effects or reflection at passive-active interfaces, depending on the approach taken. For very large material gain values, the band structure of the waveguide is perturbed, and deviations from the simple coupled Bloch wave model are found....

  1. Development of a new technique of localised analysis of electrically active defects in semiconductors

    International Nuclear Information System (INIS)

    Heiser, T.

    1988-07-01

    An analysis technique derived from minority carrier transient spectroscopy (MCTS) was developed. By giving this technique spatial resolution via a focused optical beam, it is possible to exploit the high sensitivity and the spectroscopic nature of the technique to develop a method called scanning MCTS (SMCTS) which can be used to acquire information on lateral distribution of electrically active flaws in semiconductors or associated chemical impurities. The optimum conditions, corresponding to the maximum signal for the highest resolution, can be expressed by the value of a signal parameter. The transients system was digitized, considerably reducing background noise. In order to link the SMCTS to a given flaw, two methods for exploiting the transients are used. The method was verified in tests with artificial defects created by laser and on real cases, arising in industrial processes [fr

  2. Purcell effect for active tuning of light scattering from semiconductor optical antennas.

    Science.gov (United States)

    Holsteen, Aaron L; Raza, Søren; Fan, Pengyu; Kik, Pieter G; Brongersma, Mark L

    2017-12-15

    Subwavelength, high-refractive index semiconductor nanostructures support optical resonances that endow them with valuable antenna functions. Control over the intrinsic properties, including their complex refractive index, size, and geometry, has been used to manipulate fundamental light absorption, scattering, and emission processes in nanostructured optoelectronic devices. In this study, we harness the electric and magnetic resonances of such antennas to achieve a very strong dependence of the optical properties on the external environment. Specifically, we illustrate how the resonant scattering wavelength of single silicon nanowires is tunable across the entire visible spectrum by simply moving the height of the nanowires above a metallic mirror. We apply this concept by using a nanoelectromechanical platform to demonstrate active tuning. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

  3. Determination of uranium and thorium in semiconductor memory materials by high fluence neutron activation analysis

    International Nuclear Information System (INIS)

    Dyer, F.F.; Emery, J.F.; Northcutt, K.J.; Scott, R.M.

    1981-01-01

    Uranium and thorium were measured by absolute neutron activation analysis in high-purity materials used to manufacture semiconductor memories. The main thrust of the study concerned aluminum and aluminum alloys used as sources for thin film preparation, evaporated metal films, and samples from the Czochralski silicon crystal process. Average levels of U and Th were found for the source alloys to be approx. 65 and approx. 45 ppB, respectively. Levels of U and Th in silicon samples fell in the range of a few parts per trillion. Evaporated metal films contained about 1 ppB U and Th, but there is some question about these results due to the possibility of contamination

  4. The activities of the 42nd Japanese Antarctic Research Expedition (JARE-42 wintering team 2001-2002

    Directory of Open Access Journals (Sweden)

    Yoichi Motoyoshi

    2003-07-01

    Full Text Available The 42nd Japanese Antarctic Research Expedition (JARE-42 wintering team has conducted the Vth five-year JARE program during the period of February 1st 2001 to January 31st 2002, in which 40 members were engaged in the various scientific activities and maintenance of Syowa Station. The major observation programs of JARE-42 were as follows : Upper Atmo-spheric Physics-observations using Fabry-Perot imager, sodium Lidar and HFMF radar; Atmospheric Sciences and Glaciology-aerosols and air sampling, and shallow ice core drilling; Geophysics-superconducting gravity measurement, geodetic VLBI observations, and natural earthquake monitoring; Biology and Medicine-photosynthesis under sea water, populations census of penguins, and physiological and psychological adaptation to Antarctic environment, etc. In addition, satellite data receiving from ERS-2 and NOAA were also performed by using multi-purpose antenna at Syowa Station. Field activities included air sampling by using an aircraft, biological and geophysical observations, and reconnaissance survey for a possible aircraft runway around Syowa Station. Three inland traverse parties were organized, in which fuel transportation, maintenance of Dome Fuji Station, and various glaciological and geophysical observations were performed. A great efforts were made to maintain the facilities at Syowa Station by logistic personnel including mechanical engineers, radio operators, chefs, medical doctors, aircraft pilots and an engineer, an environmental engineer, a carpenter, a field assistant, a cinematographer, a satellite engineer, and an administrative officer. They were also involved in the support of field activities.

  5. Recent advances in photoelectrochemistry. Part 1. Preparation and photocatalytic activities of semiconductor microcrystals; Saikin no hikari denki kagaku. 1. Handotai chobiryushi no chosei to hikari shokubai kassei

    Energy Technology Data Exchange (ETDEWEB)

    Yoneyama, H; Torimoto, T [Osaka Univ., Osaka (Japan). Faculty of Engineering

    1995-01-05

    The energy structure of semiconductor microcrystals with less than 10nm particle size is different from that of bulk semiconductor, and the reducing force of electrons and the oxidizing force of holes produced by light in microcrystals are larger than those of bulk semiconductor. Focusing on the application of semiconductor microcrystals to photocatalysis, the effects of the particle size and surface conditions of particles on photocatalytic activity are discussed. It has been shown that the change in the characteristics of semiconductor microcrystals depends on particle size, and microcrystals with narrow distribution of particle sized is necessary for the study of the characteristics of semiconductor microcrystals. An example of high efficient progress of CO2 direct reduction by the use of semiconductor microcrystals is introduced. It has been made clear that the photocatalytic activity of semiconductor is improved when a small amount of electrode catalyst is supported in it. A unique photocatalytic reaction which can not be observed with bulk particles can be progressed by the use of high oxidation and reduction ability caused by quantum size effect of semiconductor microcrystals. 26 refs., 2 figs., 1 tab.

  6. Tungsten polyoxometalate molecules as active nodes for dynamic carrier exchange in hybrid molecular/semiconductor capacitors

    International Nuclear Information System (INIS)

    Balliou, A.; Douvas, A. M.; Normand, P.; Argitis, P.; Glezos, N.; Tsikritzis, D.; Kennou, S.

    2014-01-01

    In this work we study the utilization of molecular transition metal oxides known as polyoxometalates (POMs), in particular the Keggin structure anions of the formula PW 12 O 40 3− , as active nodes for potential switching and/or fast writing memory applications. The active molecules are being integrated in hybrid Metal-Insulator/POM molecules-Semiconductor capacitors, which serve as prototypes allowing investigation of critical performance characteristics towards the design of more sophisticated devices. The charging ability as well as the electronic structure of the molecular layer is probed by means of electrical characterization, namely, capacitance-voltage and current-voltage measurements, as well as transient capacitance measurements, C (t), under step voltage polarization. It is argued that the transient current peaks observed are manifestations of dynamic carrier exchange between the gate electrode and specific molecular levels, while the transient C (t) curves under conditions of molecular charging can supply information for the rate of change of the charge that is being trapped and de-trapped within the molecular layer. Structural characterization via surface and cross sectional scanning electron microscopy as well as atomic force microscopy, spectroscopic ellipsometry, UV and Fourier-transform IR spectroscopies, UPS, and XPS contribute to the extraction of accurate electronic structure characteristics and open the path for the design of new devices with on-demand tuning of their interfacial properties via the controlled preparation of the POM layer.

  7. Using Polymer Semiconductors and a 3-in-1 Plastic Electronics STEM Education Kit to Engage Students in Hands-On Polymer Inquiry Activities

    Science.gov (United States)

    Enlow, Jessica L.; Marin, Dawn M.; Walter, Michael G.

    2017-01-01

    To improve polymer education for 9-12 and undergraduate students, a plastic electronics laboratory kit using polymer semiconductors has been developed. The three-module kit and curriculum use polymer semiconductors to provide hands-on inquiry activities with overlapping themes of electrical conductivity, light emission, and light-harvesting solar…

  8. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  9. Complex-envelope alternating-direction-implicit FDTD method for simulating active photonic devices with semiconductor/solid-state media.

    Science.gov (United States)

    Singh, Gurpreet; Ravi, Koustuban; Wang, Qian; Ho, Seng-Tiong

    2012-06-15

    A complex-envelope (CE) alternating-direction-implicit (ADI) finite-difference time-domain (FDTD) approach to treat light-matter interaction self-consistently with electromagnetic field evolution for efficient simulations of active photonic devices is presented for the first time (to our best knowledge). The active medium (AM) is modeled using an efficient multilevel system of carrier rate equations to yield the correct carrier distributions, suitable for modeling semiconductor/solid-state media accurately. To include the AM in the CE-ADI-FDTD method, a first-order differential system involving CE fields in the AM is first set up. The system matrix that includes AM parameters is then split into two time-dependent submatrices that are then used in an efficient ADI splitting formula. The proposed CE-ADI-FDTD approach with AM takes 22% of the time as the approach of the corresponding explicit FDTD, as validated by semiconductor microdisk laser simulations.

  10. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  11. Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

    Science.gov (United States)

    Tongay, Sefaattin; Suh, Joonki; Ataca, Can; Fan, Wen; Luce, Alexander; Kang, Jeong Seuk; Liu, Jonathan; Ko, Changhyun; Raghunathanan, Rajamani; Zhou, Jian; Ogletree, Frank; Li, Jingbo; Grossman, Jeffrey C.; Wu, Junqiao

    2013-01-01

    Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductors where the vacancies density is controlled by α-particle irradiation or thermal-annealing. We found a new, sub-bandgap emission peak as well as increase in overall photoluminescence intensity as a result of the vacancy generation. Interestingly, these effects are absent when measured in vacuum. We conclude that in opposite to conventional wisdom, optical quality at room temperature cannot be used as criteria to assess crystal quality of the 2D semiconductors. Our results not only shed light on defect and exciton physics of 2D semiconductors, but also offer a new route toward tailoring optical properties of 2D semiconductors by defect engineering. PMID:24029823

  12. Micro Extrinsic Fiber-Optic Fabry-Perot Interferometric Sensor Based on Erbium- and Boron-Doped Fibers

    International Nuclear Information System (INIS)

    Yun-Jiang, Rao; Bing, Xu; Zeng-Ling, Ran; Yuan, Gong

    2010-01-01

    Micro extrinsic Fabry–Perot interferometers (MEFPIs), with cavity lengths of up to ∼ 9 μm and maximum fringe contrast of ∼ 19 dB, are fabricated by chemically etching Er- and B-doped optical fibers and then splicing the etched fiber to a single-mode fiber, for the first time to the best of our knowledge. The strain and temperature responses of the MEFPI sensors are investigated experimentally. Good linearity and high sensitivity are achieved. Such a type of MEFPI sensor is cost-effective and suitable for mass production, indicating its great potential for a wide range of applications. (fundamental areas of phenomenology(including applications))

  13. Monostatic coaxial 1.5 μm laser Doppler velocimeter using a scanning Fabry-Perot interferometer

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Pedersen, Christian

    2013-01-01

    on heterodyne detection, our sFPI-LDV has the advantages of having large remote sensing range not limited by laser coherence, high velocity dynamic range not limited by detector bandwidth and inherent sign discrimination of Doppler shift. The more optically efficient coaxial arrangement where transmitter...... achieves ~40 dB reduction in strength of unwanted reflections (i.e. leakage) while maintaining high optical efficiency. Experiments with a solid target demonstrate the performance of the sFPI-LDV system with high sensitivity down to pW level at present update rates up to 10 Hz....

  14. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  15. Off-axis electron holography for the measurement of active dopants in silicon semiconductor devices

    International Nuclear Information System (INIS)

    Cooper, David

    2016-01-01

    There is a need in the semiconductor industry for a dopant profiling technique with nm-scale resolution. Here we demonstrate that off-axis electron holography can be used to provide maps of the electrostatic potential in semiconductor devices with nm-scale resolution. In this paper we will discuss issues regarding the spatial resolution and precision of the technique. Then we will discuss problems with specimen preparation and how this affects the accuracy of the measurements of the potentials. Finally we show results from experimental off-axis electron holography applied to nMOS and pMOS CMOS devices grown on bulk silicon and silicon- on-insulator type devices and present solutions to common problems that are encountered when examining these types of devices. (paper)

  16. A Component-Minimized Single-Phase Active Power Decoupling Circuit with Reduced Current Stress to Semiconductor Switches

    DEFF Research Database (Denmark)

    Tang, Yi; Blaabjerg, Frede

    2015-01-01

    inductor. With such a configuration, this leg can control the current going into the two output capacitors connected in series for power decoupling, and the other leg can control the line current according to active and reactive power requirement. The proposed topology does not require additional passive...... component, e.g. inductors or film capacitors for ripple energy storage because this task can be accomplished by the dc-link capacitors, and therefore its implementation cost can be minimized. Another unique feature of the proposed topology is that the current stress of power semiconductors can be reduced...

  17. Determination of thorium and uranium at the nanogram per gram level in semiconductor potting plastics by neutron activation analysis

    International Nuclear Information System (INIS)

    Dyer, F.F.; Emery, J.F.; Bate, L.C.

    1985-01-01

    A method was developed to determine thorium and uranium in semiconductor potting plastics. The method is based on neutron activation and subsequent radiochemical separation to isolate and permit measurement of the induced 233 Pa and 239 Np. These plastics typically contain macro amounts of silicon, bromine and antimony and nanogram per gram amounts of thorium and uranium. The radiochemical method provides the necessary sensitivity and makes it possible to easily attain adequate decontamination of the tiny amounts of 233 Pa and 239 Np from the high levels of radioactive bromine and antimony. 8 refs

  18. Applications of mesoscopic physics

    International Nuclear Information System (INIS)

    Feng, Shechao.

    1993-01-01

    Research activities in the area ''applications of mesoscopic physics to novel correlations and fluctuations of speckle patterns: imaging and tomography with multiply scattered classical waves'' are briefly summarized. The main thrust in fundamental research is in the general areas of mesoscopic effects in disordered semiconductors and metals and the related field of applications of mesoscopic physics to the subject matter of classical wave propagation through disordered scattering media. Specific topics are Fabry-Perot interferometer with disorder: correlations and light localization; electron-phonon inelastic scattering rate and the temperature scaling exponent in integer quantum Hall effect; and transmission and reflection correlations of second harmonic waves in nonlinear random media. Research in applied physics centered on far infrared photon-assisted transport through quantum point contact devices and photon migration distributions in multiple scattering media. 7 refs

  19. Cytotoxicity of semiconductor nanoparticles in A549 cells is attributable to their intrinsic oxidant activity

    Energy Technology Data Exchange (ETDEWEB)

    Escamilla-Rivera, Vicente; Uribe-Ramirez, Marisela [Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV-IPN), Departamento de Toxicología (Mexico); Gonzalez-Pozos, Sirenia [CINVESTAV-IPN, Unidad de Microscopia Electrónica (LaNSE) (Mexico); Velumani, Subramaniam [CINVESTAV-IPN, Departamento de Ingeniería Eléctrica (Mexico); Arreola-Mendoza, Laura [Centro Interdisciplinario de Investigaciones y Estudios sobre Medio Ambiente y Desarrollo del Instituto Politécnico Nacional (CIIEMAD-IPN), Departamento de Biociencias e Ingeniería (Mexico); Vizcaya-Ruiz, Andrea De, E-mail: avizcaya@cinvestav.mx [Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV-IPN), Departamento de Toxicología (Mexico)

    2016-04-15

    Copper indium gallium diselenide (CIGS) and cadmium sulfide (CdS) nanoparticles (NP) are next generation semiconductors used in photovoltaic cells (PV). They possess high quantum efficiency, absorption coefficient, and cheaper manufacturing costs compared to silicon. Due to their potential for an industrial development and the lack of information about the risk associated in their use, we investigated the influence of the physicochemical characteristics of CIGS (9 nm) and CdS (20 nm) in relation to the induction of cytotoxicity in human alveolar A549 cells through ROS generation and mitochondrial dysfunction. CIGS induced cytotoxicity in a dose dependent manner in lower concentrations than CdS; both NP were able to induce ROS in A549. Moreover, CIGS interact directly with mitochondria inducing depolarization that leads to the induction of apoptosis compared to CdS. Antioxidant pretreatment significantly prevented the loss of mitochondrial membrane potential and cytotoxicity, suggesting ROS generation as the main cytotoxic mechanism. These results demonstrate that semiconductor characteristics of NP are crucial for the type and intensity of the cytotoxic effects. Our work provides relevant information that may help guide the production of a safer NP-based PV technologies, and would be a valuable resource on future risk assessment for a safer use of nanotechnology in the development of clean sources of renewable energy.

  20. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  1. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  2. Construction of vesicle CdSe nano-semiconductors photocatalysts with improved photocatalytic activity: Enhanced photo induced carriers separation efficiency and mechanism insight.

    Science.gov (United States)

    Wen, Jiangsu; Ma, Changchang; Huo, Pengwei; Liu, Xinlin; Wei, Maobin; Liu, Yang; Yao, Xin; Ma, Zhongfei; Yan, Yongsheng

    2017-10-01

    Visible-light-driven photocatalysis as a green technology has attracted a lot of attention due to its potential applications in environmental remediation. Vesicle CdSe nano-semiconductor photocatalyst are successfully prepared by a gas template method and characterized by a variety of methods. The vesicle CdSe nano-semiconductors display enhanced photocatalytic performance for the degradation of tetracycline hydrochloride, the photodegradation rate of 78.824% was achieved by vesicle CdSe, which exhibited an increase of 31.779% compared to granular CdSe. Such an exceptional photocatalytic capability can be attributed to the unique structure of the vesicle CdSe nano-semiconductor with enhanced light absorption ability and excellent carrier transport capability. Meanwhile, the large surface area of the vesicle CdSe nano-semiconductor can increase the contact probability between catalyst and target and provide more surface-active centers. The photocatalytic mechanisms are analyzed by active species quenching. It indicates that h + and O 2 - are the main active species which play a major role in catalyzing environmental toxic pollutants. Simultaneously, the vesicle CdSe nano-semiconductor had high efficiency and stability. Copyright © 2017. Published by Elsevier B.V.

  3. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  4. New SRDN-3 probes with a semi-conductor detector for measuring radon activity concentration in underground spaces

    International Nuclear Information System (INIS)

    Przylibski, T.A.; Lidia Fijalkowska-Lichwa; Elzbieta Kochowska; Krzysztof Kozak; Jadwiga Mazur

    2010-01-01

    The article presents new Polish probes SRDN-3, developed at the Institute of Nuclear Chemistry and Technology in Warsaw, equipped with a semi-conductor detector used for continuous measurements of 222 Rn activity concentration. Due to a relatively high lower detection limit, the device is dedicated for use in underground spaces-caves, adits, mines, tourist routes in strongholds, pyramids, etc. Its structure allows for difficult conditions in which the device is transported to the measurement site, as well as hard operating conditions caused chiefly by large ambient relative humidity, reaching up to 100%. The authors present calibration results of these appliances, as well as the results of their work in a cave and an adit in the Sudetes (SW Poland). After almost 2 years of working in difficult conditions, the probes displayed high reliability. No defects of the semi-conductor detectors or the electronics were observed, which ensured problem-free communication of the probe-programmer-PC set. Thanks to this, the authors have a 2 year stock of data, recorded hourly by five probes, at their disposal. The only element that did not withstand the test of extreme operating conditions was one of the combined relative humidity and temperature sensors. No powering problems were observed either, and the batteries were replaced once a year, before the winter season. Also the programmer functioned faultlessly, enabling data transmission to a PC, which, being much more sensitive to operating conditions, had been placed away from the site of probe exposure. After using more sensitive temperature, relative humidity and pressure sensors, SRDN-3 probes will certainly prove an excellent tool for microclimate measurements (including measurement of air-atmosphere exchange) in caves and other underground sites. Even nowadays they are already a satisfactory tool for monitoring 222 Rn concentration in underground spaces. (author)

  5. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  6. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  7. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  8. Circuit simulation model multi-quantum well laser diodes inducing transport and capture/escape

    International Nuclear Information System (INIS)

    Zhuber-Okrog, K.

    1996-04-01

    This work describes the development of world's first circuit simulation model for multi-quantum well (MQW) semiconductor lasers comprising caier transport and capture/escape effects. This model can be seen as the application of a new semiconductor device simulator for quasineutral structures including MQW layers with an extension for simple single mode modeling of optical behavior. It is implemented in a circuit simulation program. The model is applied to Fabry-Perot laser diodes and compared to measured data. (author)

  9. GAUSS VIII: a computer program for the nuclide activity analysis of γ-ray spectra from GE semiconductor spectrometers

    International Nuclear Information System (INIS)

    Putman, M.H.; Helmer, R.G.; McCullagh, C.M.

    1985-12-01

    A description is given of a computer program, GAUSS VII, which has been written to determine nuclide or isotopic activities from γ-ray spectra from GE semiconductor spectrometers. The preliminary portion of the program can determine the energy- and width-calibration equations, locate individual peaks and define ''peak regions'' that are significantly above the local spectral background. The user may edit these lists of peaks and regions. Each peak region is fitted with one or more components in which the peaks are represented by a Gaussian function or a Gaussian with one or two additive exponential tails on the low-energy side and one on the high-energy side. A step-like background function can be used with each component. The program will automatically recycle to add one or more components to a region if needed to improve the fit. The γ-ray energies and intensities are computed from the resulting Gaussian positions and peak areas. From a comparison of these peak energies and the γ-ray energies for various nuclides in a nuclide library, the nuclides that may be present are identified. The user may edit this nuclide list. The program identifies secondary γ rays that should be present for these nuclides and obtains peak areas for them, if the areas are not already available. All of the peak areas are then analyzed to obtain the best nuclidic activities. The peak areas for any one nuclide and those for nuclides that have interfering lines are analyzed in one least-squares ft. Nuclides whose activities are essentially 0, and peaks which cannot be accounted for are removed from the analysis. Besides the nuclidic activities, a peak-by-peak summary is provided. This program is intended to analyze large groups of spectra as well as an individual spectrum

  10. Photoluminescence and photocatalytic activities of Ag/ZnO metal-semiconductor heterostructure

    International Nuclear Information System (INIS)

    Sarma, Bikash; Deb, Sujit Kumar; Sarma, Bimal K.

    2016-01-01

    Present article focuses on the photocatalytic activities of ZnO nanorods and Ag/ZnO heterostructure deposited on polyethylene terephthalate (PET) substrate. ZnO nanorods are synthesized by thermal decomposition technique and Ag nanoparticles deposition is done by photo-deposition technique using UV light. X-ray diffraction studies reveal that the ZnO nanorods are of hexagonal wurtzite structure. Further, as-prepared samples are characterized by Scanning Electron Microscopy (SEM), Photoluminescence (PL) spectroscopy and UV-Vis spectroscopy. The surface plasmon resonance response of Ag/ZnO is found at 420 nm. The photocatalytic activities of the samples are evaluated by photocatalytic decolorization of methyl orange (MO) dye with UV irradiation. The degradation rate of MO increases with increase in irradiation time. The degradation of MO follows the first order kinetics. The photocatalytic activity of Ag/ZnO heterostructure is found to be more than that of ZnO nanorods. The PL intensity of ZnO nanorods is stronger than that of the Ag/ZnO heterostructure. The strong PL intensity indicates high recombination rate of photoinduced charge carriers which lowers the photocatalytic activity of ZnO nanorods. The charge carrier recombination is effectively suppressed by introducing Ag nanoparticles on the surface of the ZnO nanorods. This study demonstrates a strong relationship between PL intensity and photocatalytic activity. (paper)

  11. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  12. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  13. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  14. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  15. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  16. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  17. Neutron activation determination of phosphorus and sulfur in semiconductor materials by 32P-isotope

    International Nuclear Information System (INIS)

    Nikolaev, A.V.; Gol'dshtejn, M.M.; Gil'bert, Eh.N.; Verevkin, G.V.; Yudelevich, I.G.

    1977-01-01

    A neutron-activation method has been developed for determining phosphorus and sulphur in germanium, gallium, gallium arsenide, and silicon structures using 32 P isotope. The dioctyl-sulphoxide (DOSO) extraction of phosphoric molybdenum acid (PMA) has been used to separate 32 P in a radiochemically pure form. Correction factors have been calculated due to the 2nd order interference on 30 Si nuclei in determining phosphorus in silicon for various irradiation times and at various cadmium proportions

  18. Density Functional Theory Calculations of Activation Energies for Carrier Capture by Defects in Semiconductors

    Science.gov (United States)

    Modine, N. A.; Wright, A. F.; Lee, S. R.

    The rate of defect-induced carrier recombination is determined by both defect levels and carrier capture cross-sections. Density functional theory (DFT) has been widely and successfully used to predict defect levels, but only recently has work begun to focus on using DFT to determine carrier capture cross-sections. Lang and Henry developed the theory of carrier-capture by multiphonon emission in the 1970s and showed that carrier-capture cross-sections differ between defects primarily due to differences in their carrier capture activation energies. We present an approach to using DFT to calculate carrier capture activation energies that does not depend on an assumed configuration coordinate and that fully accounts for anharmonic effects, which can substantially modify carrier activation energies. We demonstrate our approach for intrinisic defects in GaAs and GaN and discuss how our results depend on the choice of exchange-correlation functional and the treatment of spin polarization. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  19. Study of the spectral width of intermode beats and optical spectrum of an actively mode-locked three-mirror semiconductor laser

    International Nuclear Information System (INIS)

    Zakharyash, Valerii F; Kashirsky, Aleksandr V; Klementyev, Vasilii M; Kuznetsov, Sergei A; Pivtsov, V S

    2005-01-01

    Various oscillation regimes of an actively mode-locked semiconductor laser are studied experimentally. Two types of regimes are found in which the minimal spectral width (∼3.5 kHz) of intermode beats is achieved. The width of the optical spectrum of modes is studied as a function of their locking and the feedback coefficients. The maximum width of the spectrum is ∼3.7 THz. (control of laser radiation parameters)

  20. Determination of phosphorus in semiconductor grade silicon by neutron activation analysis

    International Nuclear Information System (INIS)

    Jaskolska, H.; Rowinska, L.

    1975-01-01

    A method of determination of phosphorus in silicon has been elaborated. The separation of phosphorus is based on the extraction of phosphomolybdic complex in the presence of hold-back carriers of Ta and Au. Contamination factors for various impurities were determined. The lower limit of determination equals 3.10 -11 g P. Types of errors in the determination of concentration profiles are discussed. The method meets the following requirements: 1./ It ensures good separation of phosphorus from elements occuring in silicon plates (i.e. Ta, Au, Sn, Ge, Ce, Sb, As, Cu, and Na). 2./ It ensures high chemical yield of phosphorus separation. 3./ It ensures high efficiency of the measurement of 32 P β-activity. 4./ It is simple and rapid, since, for the determination of a implantation profile, it is necessary to analyse several tens of layers. (T.G.)

  1. Neutron-activation determination of the rare earths in natural calcites using a semiconductor detector

    International Nuclear Information System (INIS)

    Vaganov, N.A.; Bulnaev, A.I.; Mejer, V.A.; Ponomarev, V.S.

    1976-01-01

    The application of germanium semiconducting detector is described. The detector has an energy resolution about 1 KeV and makes it possible to determine the content of Ce, Nd, Eu, Gd, Tb, and Yb in natural calcites with high sensitivity. The region of soft γ-radiation of activated calcites is more favourable for measurements to be performed than the region of hard γ-rays. Semiconducting detectors of radiation type are relatively cheap; they can be stored at room temperature. The limit of determining rare earth elements in calcites is (g): Eu-1.5.10 -9 ; Tb-4.0.10 -9 ; Yb-7.0.10 -9 ; Ce-1.0.10 -7 ; Nd-5.0.10 -7 ; Gd-1.0.10 -6 . A relative error of concentration determination is 10-20%

  2. Trace impurities analysis determined by neutron activation in the PbI 2 crystal semiconductor

    Science.gov (United States)

    Hamada, M. M.; Oliveira, I. B.; Armelin, M. J.; Mesquita, C. H.

    2003-06-01

    In this work, a methodology for impurity analysis of PbI 2 was studied to investigate the effectiveness of the purification. Commercial salts were purified by the multi passes zone refining and grown by the Bridgman method. To evaluate the purification efficiency, samples from the bottom, middle and upper sections of the ZR ingot were analyzed after 200, 300 and 500 purification passes, by measurements of the impurity concentrations, using the neutron activation analysis (NAA) technique. There was a significant reduction of the impurities according to the purification numbers. The reduction efficiency was different for each element, namely: Au>Mn>Co˜Ag>K˜Br. The impurity concentration of the crystals grown after 200, 300 and 500 passes and the PbI 2 starting material were analyzed by NAA and plasma optical emission spectroscopy.

  3. Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor

    Science.gov (United States)

    Griffiths, J. A.; Chen, D.; Turchetta, R.; Royle, G. J.

    2011-03-01

    An intensified CMOS active pixel sensor (APS) has been constructed for operation in low-light-level applications: a high-gain, fast-light decay image intensifier has been coupled via a fiber optic stud to a prototype "VANILLA" APS, developed by the UK based MI3 consortium. The sensor is capable of high frame rates and sparse readout. This paper presents a study of the performance parameters of the intensified VANILLA APS system over a range of image intensifier gain levels when uniformly illuminated with 520 nm green light. Mean-variance analysis shows the APS saturating around 3050 Digital Units (DU), with the maximum variance increasing with increasing image intensifier gain. The system's quantum efficiency varies in an exponential manner from 260 at an intensifier gain of 7.45 × 103 to 1.6 at a gain of 3.93 × 101. The usable dynamic range of the system is 60 dB for intensifier gains below 1.8 × 103, dropping to around 40 dB at high gains. The conclusion is that the system shows suitability for the desired application.

  4. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  5. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  6. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  7. Roadmap on semiconductor-cell biointerfaces

    Science.gov (United States)

    Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

    2018-05-01

    This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

  8. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  9. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  10. Comparative Study of the Photocatalytic Activity of Semiconductor Nanostructures and Their Hybrid Metal Nanocomposites on the Photodegradation of Malathion

    Directory of Open Access Journals (Sweden)

    Dina Mamdouh Fouad

    2012-01-01

    Full Text Available This work is devoted to synthesize different semiconductor nanoparticles and their metal-hybrid nanocomposites such as TiO2, Au/TiO2, ZnO, and Au/ZnO. The morphology and crystal structure of the prepared nanomaterials are characterized by the TEM and XRD, respectively. These materials are used as catalysts for the photodegradation of Malathion which is one of the most commonly used pesticides in the developing countries. The degradation of 10 ppm Malathion under ultraviolet (UV and visible light in the presence of the different synthesized nanocomposites was analyzed with high-performance liquid chromatography (HPLC and UV-Visible Spectra. A comprehensive study is carried out for the catalytic efficiency of the prepared nanoparticles. Different factors influencing the catalytic photodegradation are investigated, as different light source, surface coverage, and nature of the organic contaminants. The results indicate that hybrid nanocomposite of the semiconductor-metal hybrid serves as a better catalytic system compared with semiconductor nanoparticles themselves.

  11. HARLIE 3-D Aerosol Backscatter and Wind Profile Measurements During Recent Field Experiments: Background Noise Reduction with a Fabry-Perot Etalon Filter in the HARLIE System

    Science.gov (United States)

    Lee, Sangwoo; Miller, David O.; Schwemmer, Geary; Wilkerson, Thomas D.; Andrus, Ionio; Egbert, Cameron; Anderson, Mark; Starr, David OC. (Technical Monitor)

    2002-01-01

    Background noise reduction of War signals is one of the most important factors in achieving better signal to noise ratio and precise atmospheric data from Mar measurements. Fahey Perot etalons have been used in several lidar systems as narrow band pass filters in the reduction of scattered sunlight. An slalom with spectral bandwidth, (Delta)v=0.23/cm, free spectral range, FSR=6.7/cm, and diameter, d=24mm was installed in a fiber coupled box which included a 500 pm bandwidth interference Filter. The slalom box couples the telescope and detector with 200 pm core fibers and 21 mm focal length collimators. The angular magnification is M=48. The etalon box was inserted into the Holographic Airborne Rotating Lidar Instrument Experiment (HARLIE) system and tested during the HARGLO-2 intercomparison campaign conducted in November 2001 at Wallops Island, Virginia. This paper presents the preliminary test results of the slalom and a complete analysis will be presented at the conference.

  12. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  13. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  14. Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO2, WO3 and ZnO)

    Science.gov (United States)

    Kumar, S. Girish; Rao, K. S. R. Koteswara

    2017-01-01

    Metal oxide semiconductors (TiO2, WO3 and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO2, WO3 & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO2 and WO3 in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal the changed surface-electronic structure upon various modifications, but also shed light on charge carrier dynamics, free radical generation, structural stability and compatibility for photocatalytic reactions. It is envisioned that these cardinal tactics have profound implications and can be replicated to other semiconductor photocatalysts like CeO2, In2O3, Bi2O3, Fe2O3, BiVO4, AgX, BiOX (X = Cl, Br & I), Bi2WO6, Bi2MoO6

  15. Power semiconductor device adaptive cooling assembly

    NARCIS (Netherlands)

    2011-01-01

    The invention relates to a power semiconductor device (100) cooling assembly for cooling a power semiconductor device (100), wherein the assembly comprises an actively cooled heat sink (102) and a controller (208; 300), wherein the controller (208; 300) is adapted for adjusting the cooling

  16. Dispersion-induced nonlinearities in semiconductors

    DEFF Research Database (Denmark)

    Mørk, Jesper; Mecozzi, A.

    2002-01-01

    A dispersive and saturable medium is shown, under very general conditions, to possess ultrafast dynamic behaviour due to non-adiabatic polarisation dynamics. Simple analytical expressions relating the effect to the refractive index dispersion of a semiconductor ire derived and the magnitude...... of the equivalent Kerr coefficient is shown to be in qualitative agreement with measurements on active semiconductor waveguides....

  17. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  18. Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers

    Science.gov (United States)

    Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)

    2010-01-01

    A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

  19. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  20. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  1. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  2. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  3. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  4. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  5. Embedded fiber optic ultrasonic sensors and generators

    Science.gov (United States)

    Dorighi, John F.; Krishnaswamy, Sridhar; Achenbach, Jan D.

    1995-04-01

    Ultrasonic sensors and generators based on fiber-optic systems are described. It is shown that intrinsic fiber optic Fabry-Perot ultrasound sensors that are embedded in a structure can be stabilized by actively tuning the laser frequency. The need for this method of stabilization is demonstrated by detecting piezoelectric transducer-generated ultrasonic pulses in the presence of low frequency dynamic strains that are intentionally induced to cause sensor drift. The actively stabilized embedded fiber optic Fabry-Perot sensor is also shown to have sufficient sensitivity to detect ultrasound that is generated in the interior of a structure by means of a high-power optical fiber that pipes energy from a pulsed laser to an embedded generator of ultrasound.

  6. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  7. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  8. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  9. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  10. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  11. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  12. Implementation of activity-based costing (ABC) to drive cost reduction efforts in a semiconductor manufacturing operation

    Science.gov (United States)

    Naguib, Hussein; Bol, Igor I.; Lora, J.; Chowdhry, R.

    1994-09-01

    This paper presents a case study on the implementation of ABC to calculate the cost per wafer and to drive cost reduction efforts for a new IC product line. The cost reduction activities were conducted through the efforts of 11 cross-functional teams which included members of the finance, purchasing, technology development, process engineering, equipment engineering, production control, and facility groups. The activities of these cross functional teams were coordinated by a cost council. It will be shown that these activities have resulted in a 57% reduction in the wafer manufacturing cost of the new product line. Factors contributed to successful implementation of an ABC management system are discussed.

  13. Observations of Superwinds in Dwarf Galaxies

    Science.gov (United States)

    Marlowe, A. T.; Heckman, T. M.; Wyse, R.; Schommer, R.

    1993-12-01

    Dwarf galaxies are important in developing our understanding of the formation and evolution of galaxies, and of the structure in the universe. The concept of supernova-driven mass outflows is a vital ingredient in theories of the structure and evolution of dwarfs galaxies. We have begun a detailed multi-waveband search for outflows in starbursting dwarf galaxies, and have obtained Fabry-Perot images and Echelle spectra of 20 nearby actively-star-forming dwarf galaxies. In about half the sample, the Fabry-Perot Hα images show loops and filaments with sizes of one to a few kpc. The Echelle spectra taken through the loops and filaments show kinematics consistent with expanding bubble-like structures. We describe these data, and present seven dwarfs in our sample that have the strongest evidence of outflows.

  14. Overview of recent results from the Tore Supra ECE diagnostics

    International Nuclear Information System (INIS)

    Talvard, M.; Liu, W.D.; Giruzzi, G.

    1993-01-01

    The Tore Supra ECE diagnostic system consists of a set of 3 Michelson and 12 Fabry-Perot interferometers, which is now fully operational. We present results obtained with the 3 Michelson during LHCD experiments first. It is shown how the sensitivity of the diagnostic to rather high v (perpendicular) prevents detection of v (parallel) anisotropies. On the other hand, measurements during the Ohmic phase reveal some unexpected anisotropy which can be attributed to superthermal electrons related to the bootstrap current. The 12 Fabry-Perot have been operated using high acquisition sampling rates during pellet injection experiments. A shudder preceding the pellet itself is clearly evidenced just before an internal disruption occurs. During sawtooth activity, such measurements are also used to study the dynamics of the m=1, n=1 instability on the q=1 surface itself

  15. The nature of the high-velocity gas in NGC 1275: first results with TAURUS-2 on the William Herschel telescope

    International Nuclear Information System (INIS)

    Unger, S.W.; Taylor, K.; Pedlar, A.; Ghataure, H.S.; Penston, M.V.; Robinson, A.

    1990-01-01

    Observations with a new imaging Fabry-Perot interferometer, TAURUS-2, show that there is a close spatial association between the two systems of emission-line gas in the active galaxy NGC 1275 (Perseus A, 3C84). It therefore seems likely that, as first suggested by previous authors, we are witnessing two galaxies in the process of colliding. We show that this hypothesis is consistent with all available observations of this object. (author)

  16. Fabrication and characterization of 6,13-bis(triisopropylsilylethynyl)-pentacene active semiconductor thin films prepared by flow-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Mohamad, Khairul Anuar; Rusnan, Fara Naila; Seria, Dzulfahmi Mohd Husin; Saad, Ismail; Alias, Afishah [Nano Engineering & Materials (NEMs) Research Group, Faculty of Engineering Universiti Malaysia Sabah, Kota Kinabalu 88400 Sabah (Malaysia); Katsuhiro, Uesugi; Hisashi, Fukuda [Division of Engineering for Composite Functions, Muroran Institute of Technology 27-1 Mizumoto, Muroran 050-8585 Hokkaido (Japan)

    2015-08-28

    Investigation on the physical characterization and comparison of organic thin film based on a soluble 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene is reported. Oriented thin-films of pentacene have been successfully deposited by flow-coating method, in which the chloroform solution is sandwiched between a transparent substrate and a slide glass, followed by slow-drawing of the substrate with respect to the slide glass. Molecular orientation of flow-coated TIPS-pentacene is comparable to that of the thermal-evaporated pentacene thin film by the X-ray diffraction (XRD) results. XRD results showed that the morphology of flow-coated soluble pentacene is similar to that of the thermal-evaporated pentacene thin films in series of (00l) diffraction peaks where the (001) diffraction peaks are strongest in the nominally out-of-plane intensity and interplanar spacing located at approximately 2θ = 5.33° (d-spacing, d{sub 001} = 16 Å). Following that, ITO/p-TIPS-pentacene/n-ZnO/Au vertical diode was fabricated. The diode exhibited almost linear characteristics at low voltage with nonlinear characteristics at higher voltage which similar to a pn junction behavior. The results indicated that the TIPS-pentacene semiconductor active thin films can be used as a hole injection layer for fabrication of a vertical organic transistor.

  17. Efficient visible-light photocatalytic activity by band alignment in mesoporous ternary polyoxometalate-Ag2S-CdS semiconductors

    Science.gov (United States)

    Kornarakis, I.; Lykakis, I. N.; Vordos, N.; Armatas, G. S.

    2014-07-01

    Porous multicomponent semiconductor materials show improved photocatalytic performance due to the large and accessible pore surface area and high charge separation efficiency. Here we report the synthesis of well-ordered porous polyoxometalate (POM)-Ag2S-CdS hybrid mesostructures featuring a controllable composition and high photocatalytic activity via a two-step hard-templating and topotactic ion-exchange chemical process. Ag2S compounds and polyoxometalate cluster anions with different reduction potentials, such as PW12O403-, SiW12O404- and PMo12O403-, were employed as electron acceptors in these ternary heterojunction photocatalysts. Characterization by small-angle X-ray scattering, X-ray diffraction, transmission electron microscopy and N2 physisorption measurements showed hexagonal arrays of POM-Ag2S-CdS hybrid nanorods with large internal BET surface areas and uniform mesopores. The Keggin structure of the incorporated POM clusters was also verified by elemental X-ray spectroscopy microanalysis, infrared and diffuse-reflectance ultraviolet-visible spectroscopy. These new porous materials were implemented as visible-light-driven photocatalysts, displaying exceptional high activity in aerobic oxidation of various para-substituted benzyl alcohols to the corresponding carbonyl compounds. Our experiments show that the spatial separation of photogenerated electrons and holes at CdS through the potential gradient along the CdS-Ag2S-POM interfaces is responsible for the increased photocatalytic activity.Porous multicomponent semiconductor materials show improved photocatalytic performance due to the large and accessible pore surface area and high charge separation efficiency. Here we report the synthesis of well-ordered porous polyoxometalate (POM)-Ag2S-CdS hybrid mesostructures featuring a controllable composition and high photocatalytic activity via a two-step hard-templating and topotactic ion-exchange chemical process. Ag2S compounds and polyoxometalate cluster

  18. Photocatalytic semiconductors synthesis, characterization, and environmental applications

    CERN Document Server

    Hernández-Ramírez, Aracely

    2014-01-01

    This critical volume examines the different methods used for the synthesis of a great number of photocatalysts, including TiO2, ZnO and other modified semiconductors, as well as characterization techniques used for determining the optical, structural and morphological properties of the semiconducting materials. Additionally, the authors discuss photoelectrochemical methods for determining the light activity of the photocatalytic semiconductors by means of measurement of properties such as band gap energy, flat band potential and kinetics of hole and electron transfer. Photocatalytic Semiconductors: Synthesis, Characterization and Environmental Applications provide an overview of the semiconductor materials from first- to third-generation photocatalysts and their applications in wastewater treatment and water disinfection. The book further presents economic and toxicological aspects in the production and application of photocatalytic materials.

  19. X-ray absorption spectroscopy of semiconductors

    CERN Document Server

    Ridgway, Mark

    2015-01-01

    X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-sit...

  20. Nitrogen doped nanocrystalline semiconductor metal oxide: An efficient UV active photocatalyst for the oxidation of an organic dye using slurry Photoreactor.

    Science.gov (United States)

    Ramachandran, Saranya; Sivasamy, A; Kumar, B Dinesh

    2016-12-01

    Water pollution is a cause for serious concern in today's world. A major contributor to water pollution is industrial effluents containing dyes and other organic molecules. Waste water treatment has become a priority area in today's applied scientific research as it seeks to minimize the toxicity of the effluents being discharged and increase the possibility of water recycling. An efficient and eco-friendly way of degrading toxic molecules is to use nano metal-oxide photocatalysts. The present study aims at enhancing the photocatalytic activity of a semiconductor metal oxide by doping it with nitrogen. A sol-gel cum combustion method was employed to synthesize the catalyst. The prepared catalyst was characterized by FT-IR, XRD, UV-DRS, FESEM and AFM techniques. UV-DRS result showed the catalyst to possess band gap energy of 2.97eV, thus making it active in the UV region of the spectrum. Its photocatalytic activity was evaluated by the degradation of a model pollutant-Orange G dye, under UV light irradiation. Preliminary experiments were carried out to study the effects of pH, catalyst dosage and initial dye concentration on the extent of dye degradation. Kinetic studies revealed that the reaction followed pseudo first order kinetics. The effect of electrolytes on catalyst efficiency was also studied. The progress of the reaction was monitored by absorption studies and measuring the reduction in COD. The catalyst thus prepared was seen to have a high photocatalytic efficiency. The use of this catalyst is a promising means of waste water treatment. Copyright © 2016 Elsevier Inc. All rights reserved.

  1. Optimized circuit design for flexible 8-bit RFID transponders with active layer of ink-jet printed small molecule semiconductors

    NARCIS (Netherlands)

    Kjellander, B.K.C.; Smaal, W.T.T.; Myny, K.; Genoe, J.; Dehaene, W.; Heremans, P.; Gelinck, G.H.

    2013-01-01

    We ink-jet print a blend of 6,13-bis(triisopropyl-silylethynyl)pentacene and polystyrene as the active layer for flexible circuits. The discrete ink-jet printed transistors exhibit a saturation mobility of 0.5 cm2 V -1 s-1. The relative spread in transistor characteristics can be very large. This

  2. Foreword: Focus on Superconductivity in Semiconductors

    Directory of Open Access Journals (Sweden)

    Yoshihiko Takano

    2008-01-01

    Full Text Available Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm−3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors.This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008, which was held at the National Institute for Materials Science (NIMS, Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1.The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al are discussed, and In2O3 (Makise et al is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high

  3. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  4. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  5. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  6. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  7. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  8. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  9. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  10. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  11. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  12. A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

    Energy Technology Data Exchange (ETDEWEB)

    Lauber, A; Rosencrantz, B

    1964-10-15

    A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described.

  13. A Needle-Type p-i-n Junction Semiconductor Detector for In-Vivo Measurement of Beta Tracer Activity

    International Nuclear Information System (INIS)

    Lauber, A.; Rosencrantz, B.

    1964-10-01

    A miniature detector probe has been developed for in-vivo detection of beta tracer activity. A lithium-drifted p-i-n detector shaped as a cylinder 0.9 mm in diameter and 3 mm long acts as the sensing element. The detector is encased in a stainless steel tube 50 mm long, fastened to a holder fitted with a miniature coaxial contact. The free end of the tube has a syringe-like, entirely tight tip. The steel tube has an outer diameter of 1.4 mm except for 10 mm at the free end where the outer diameter is 1.1 mm corresponding to a wall thickness of 005 mm. The detector is placed in the 1.1 mm part of the tube. The construction and the properties of the probe are described

  14. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  15. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  16. Processing of insulators and semiconductors

    Science.gov (United States)

    Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

    2015-06-16

    A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

  17. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  18. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  19. Antibacterial Activity Of ternary semiconductor compounds AgInSe2 Nanoparticles Synthesized by Simple Chemical Method

    Science.gov (United States)

    Shehab, A. A.; Fadaam, S. A.; Abd, A. N.; Mustafa, M. H.

    2018-05-01

    In this objective AgInSe2Nanoparticles (AgInSe2 NPs) were prepared by a simple chemical method (SCM). The optica structural l and morphological properties of the synthesized AgInSe2 NPs swere investigated by using UVVI absorption atomic force microscopy AFMmf, Fourier Transform Infrared Spectroscopy and x-ray diffraction. The resistance of bacteria represents a trouble and the outlook for the use of antibiotics in the future until now uncertain. Measures must be taken to decrease this problem. Antibacterial activity of the AgInSe2 nanoparticles were exposed against several pathogenic bacteriaa including Klebsiella pneumonia KPa, Staphylococcus aureus, Bacillus subtili, Enterobacter Cloacae and Esherichia Coliby. Using a good spread method the results showed that AgInSe2 NPs had inhibitory effect versus some pathogenic bacteria with suppression area 18, 14 and 17 mm for SAgInSe2 NPs had an inhibitory effect against S Bacillus Subtilis 11 mm K EnterobactercCloacae 12 mm.

  20. Synthesis and characterization of vanadium doped SnO2 diluted magnetic semiconductor nanoparticles with enhanced photocatalytic activities

    International Nuclear Information System (INIS)

    Mazloom, J.; Ghodsi, F.E.; Golmojdeh, H.

    2015-01-01

    Highlights: • Pure and V-doped SnO 2 nanoparticles were synthesized using a facile sol–gel route. • The V 4+ ions were incorporated into the SnO 2 lattice and located at the Sn 4+ sites. • TEM images reveled that by increasing the doping content, average grain size decreased. • We show that the V-doped SnO 2 is more photoactive than undoped SnO 2 . • The V-doped SnO 2 nanoparticles exhibited ferromagnetism at room temperature. - Abstract: Vanadium doped SnO 2 nanoparticles were synthesized by a facile sol–gel method. Different analytical techniques including TG/DTG, XRD, XPS, VSM and PL were used to investigate the influence of dopant concentration on structural, morphological, compositional, magnetic and optical properties of prepared nanoparticles. The XRD study showed a dominant tetragonal structure. The X-ray photoelectron spectroscopy proved the presence of vanadium as V 4+ species. TEM image revealed that particle size decrease by doping. It was found that room temperature ferromagnetic (RTFM) behavior is strongly dependent on vanadium dopant content and the magnetic saturation dropped rapidly with increasing V content, which can be explained reasonably through bound magnetic polaron (BMP) model. A quenching in green luminescence intensity was observed in V-doped SnO 2 compared to undoped sample. The 5% V-doped SnO 2 sample showed better photocatalytic activity than undoped one in decomposing methylene blue and rhodamine B

  1. Application of neutron activation analysis for the determination of implantation profiles of phosphorus in semiconductor grade silicon

    International Nuclear Information System (INIS)

    Jaskolska, H.; Rowinska, L.; Walis, L.

    1977-01-01

    A method for the determination of concentration profiles of phosphorus in silicon by neutron activation has been elaborated. It is based on the previously described extraction methods, in which phosphorus is extracted as phosphomolybdic complex with isoamyl alcohol. It was suitably modified and Au and Ta holdback carriers were used in order to diminish the extraction of these elements together with phosphorus. The method permits to achieve decontamination factors of 10 2 -10 3 for the elements found in the Si plates examined. The yield of phosphorus separation is nearly constant and amounts to 84%. Layers are removed from the annealed plate by anodic oxidation and by dissolving the oxide formed on the surface in diluted hydrofluoric acid. The thickness of the removed layers is determined from previously prepared calibration curves. The lower limit of determination is of the order 10 -11 g P. Two groups of errors have been discussed. The suitability of autoradiography to the determination of concentration profiles has been demonstrated. Some applications of the method are suggested. (T.G.)

  2. Adsorption of copper, nickel and lead ions from synthetic semiconductor industrial wastewater by palm shell activated carbon

    International Nuclear Information System (INIS)

    Onundi, Y. B.; Mamun, A. A.; Al Khatib, M. F.; Ahmad, Y. M.

    2010-01-01

    Granular activated carbon produced from palm kernel shell was used as adsorbent to remove copper, nickel and lead ions from a synthesized industrial wastewater. Laboratory experimental investigation was carried out to identify the effect of p H and contact time on adsorption of lead, copper and nickel from the mixed metals solution. Equilibrium adsorption experiments at ambient room temperature were carried out and fitted to Langmuir and Freundlich models. Results showed that p H 5 was the most suitable, while the maximum adsorbent capacity was at a dosage of 1 g/L, recording a sorption capacity of 1.337 mg/g for lead, 1.581 mg/g for copper and 0.130 mg/g for nickel. The percentage metal removal approached equilibrium within 30 minutes for lead, 75 minutes for copper and nickel, with lead recording 100 p ercent , copper 97 p ercent a nd nickel 55 p ercent r emoval, having a trend of Pb 2+ > Cu 2+ > Ni 2+ . Langmuir model had higher R 2 values of 0.977, 0.817 and 0.978 for copper, nickel and lead respectively, which fitted the equilibrium adsorption process more than Freundlich model for the three metals.

  3. FY1995 research on nonlinear optical devices using super-lattice semiconductors; 1995 nendo chokoshi active hisenkei soshi wo mochiita chokosoku hikari seigyo gijutsu no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose is to develop technologies on efficient generation and control of femtosecond optical pulses using a novel semiconductor optical devices. We studied a modelocked Cr:forsterite laser pumped by a diode pumped Nd:YVO4 laser. Both Kerr lens mode locking and semi-conductor saturable absorber initiated mode locking have been achieved. The minimum pulse width for pure Kerr lens mode locking is 26.4 fs, while for the semiconductor saturable absorber initiated mode locking, the pulse width is 36 fs. The latter is very resistant to the environment perturbations. We also present the measured dispersion data for the forsterite crystal and the SESAM, and discuss the dispersion compensation technique. (NEDO)

  4. Antifungal activity of wide band gap Thioglycolic acid capped ZnS:Mn semiconductor nanoparticles against some pathogenic fungi

    Energy Technology Data Exchange (ETDEWEB)

    Ibrahim, Isam M.; Ali, Iftikhar M. [Department of physics, College of Science, Baghdad University, Baghdad (Iraq); Dheeb, Batol Imran [Department of Biology, College of Education, Iraqia University, Baghdad (Iraq); Abas, Qayes A. [Department of physics, College of Education, University of Anbar, Anbar (Iraq); Asmeit Ramizy, E-mail: asmat_hadithi@yahoo.com [Department of physics, College of Science, University of Anbar, Anbar (Iraq); Renewable energy Research Center, University of Anbar, Anbar (Iraq); Eisa, M.H. [Department of physics, College of Science, Sudan University of Science Technology, Khartoum 11113 (Sudan); Department of physics, College of Science, Al Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh 11623 (Saudi Arabia); Aljameel, A.I. [Department of physics, College of Science, Al Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh 11623 (Saudi Arabia)

    2017-04-01

    The manganese doped zinc sulfide nanoparticles were synthesized by simple aqueous chemical reaction of manganese chloride, zinc acetate and thioacitamide in aqueous solution. Thioglycolic acid is used as capping agent for controlling the nanoparticle size. The main advantage of the ZnS:Mn nanoparticles of diameter ~ 2.73 nm is that the sample is prepared by using non-toxic precursors in a cost effective and eco-friendly way. The structural, morphological and chemical composition of the nanoparticles have been investigated by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) with energy dispersion spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy. The nanosize of the prepared nanoparticles was elucidated by Scanning Electron Microscopy (SEM). FTIR result ensures that Thioglycolic acid is well bonded on the surface of ZnS:Mn NPs. The antifungal effects of Thioglycolic acid capped ZnS:Mn nanoparticles exhibited a potent antifungal activity against tested fungal strains, so deserving further investigation for clinical applications. The antifungal property of manganese doped zinc sulphide nanoparticles is attributed to the generation of reactive oxygen species due to the interaction of nanoparticles with water. Additionally, the presence of Zn and S in the zone of inhibition area leads to perturbation of fungi cell membranes resulting in growth inhibition. - Highlights: • The manganese doped zinc sulfide nanoparticles were synthesized. • Thioglycolic acid is used as capping agent for controlling the nanoparticle size. • The structural, morphological and chemical composition of the nanoparticles has been investigated. • The presence of Zn and S in the zone of inhibition area leads to perturbation of fungi cell membranes.

  5. Antifungal activity of wide band gap Thioglycolic acid capped ZnS:Mn semiconductor nanoparticles against some pathogenic fungi

    International Nuclear Information System (INIS)

    Ibrahim, Isam M.; Ali, Iftikhar M.; Dheeb, Batol Imran; Abas, Qayes A.; Asmeit Ramizy; Eisa, M.H.; Aljameel, A.I.

    2017-01-01

    The manganese doped zinc sulfide nanoparticles were synthesized by simple aqueous chemical reaction of manganese chloride, zinc acetate and thioacitamide in aqueous solution. Thioglycolic acid is used as capping agent for controlling the nanoparticle size. The main advantage of the ZnS:Mn nanoparticles of diameter ~ 2.73 nm is that the sample is prepared by using non-toxic precursors in a cost effective and eco-friendly way. The structural, morphological and chemical composition of the nanoparticles have been investigated by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) with energy dispersion spectroscopy (EDS) and Fourier transform infrared (FTIR) spectroscopy. The nanosize of the prepared nanoparticles was elucidated by Scanning Electron Microscopy (SEM). FTIR result ensures that Thioglycolic acid is well bonded on the surface of ZnS:Mn NPs. The antifungal effects of Thioglycolic acid capped ZnS:Mn nanoparticles exhibited a potent antifungal activity against tested fungal strains, so deserving further investigation for clinical applications. The antifungal property of manganese doped zinc sulphide nanoparticles is attributed to the generation of reactive oxygen species due to the interaction of nanoparticles with water. Additionally, the presence of Zn and S in the zone of inhibition area leads to perturbation of fungi cell membranes resulting in growth inhibition. - Highlights: • The manganese doped zinc sulfide nanoparticles were synthesized. • Thioglycolic acid is used as capping agent for controlling the nanoparticle size. • The structural, morphological and chemical composition of the nanoparticles has been investigated. • The presence of Zn and S in the zone of inhibition area leads to perturbation of fungi cell membranes.

  6. Measurement of laser activated electron tunneling from semiconductor zinc oxide to adsorbed organic molecules by a matrix assisted laser desorption ionization mass spectrometer

    International Nuclear Information System (INIS)

    Zhong Hongying; Fu Jieying; Wang Xiaoli; Zheng Shi

    2012-01-01

    Highlights: ► Irradiation of photons with energies more than the band gap generates electron–hole pairs. ► Electron tunneling probability is dependent on the electron mobility. ► Tunneling electrons are captured by charge deficient atoms. ► Unpaired electrons induce cleavages of chemical bonds. - Abstract: Measurement of light induced heterogeneous electron transfer is important for understanding of fundamental processes involved in chemistry, physics and biology, which is still challenging by current techniques. Laser activated electron tunneling (LAET) from semiconductor metal oxides was observed and characterized by a MALDI (matrix assisted laser desorption ionization) mass spectrometer in this work. Nanoparticles of ZnO were placed on a MALDI sample plate. Free fatty acids and derivatives were used as models of organic compounds and directly deposited on the surface of ZnO nanoparticles. Irradiation of UV laser (λ = 355 nm) with energy more than the band gap of ZnO produces ions that can be detected in negative mode. When TiO 2 nanoparticles with similar band gap but much lower electron mobility were used, these ions were not observed unless the voltage on the sample plate was increased. The experimental results indicate that laser induced electron tunneling is dependent on the electron mobility and the strength of the electric field. Capture of low energy electrons by charge-deficient atoms of adsorbed organic molecules causes unpaired electron-directed cleavages of chemical bonds in a nonergodic pathway. In positive detection mode, electron tunneling cannot be observed due to the reverse moving direction of electrons. It should be able to expect that laser desorption ionization mass spectrometry is a new technique capable of probing the dynamics of electron tunneling. LAET offers advantages as a new ionization dissociation method for mass spectrometry.

  7. Practical routes to (SiH₃)₃P: applications in group IV semiconductor activation and in group III-V molecular synthesis.

    Science.gov (United States)

    Tice, Jesse B; Chizmeshya, A V G; Tolle, J; D' Costa, V R; Menendez, J; Kouvetakis, J

    2010-05-21

    The (SiH₃)₃P hydride is introduced as a practical source for n-doping of group IV semiconductors and as a highly-reactive delivery agent of -(SiH₃)₂P functionalities in exploratory synthesis. In contrast to earlier methods, the compound is produced here in high purity quantitative yields via a new single-step method based on reactions of SiH₃Br and (Me₃Sn)₃P, circumventing the need for toxic and unstable starting materials. As an initial demonstration of its utility we synthesized monosubstituted Me₂M-P(SiH₃)₂ (M = Al, Ga, In) derivatives of Me₃M containing the (SiH₃)₂P ligand for the first time, in analogy to the known Me₂M-P(SiMe₃)₂ counterparts. A dimeric structure of Me₂M-P(SiH₃)₂ is proposed on the basis of spectroscopic characterizations and quantum chemical simulations. Next, in the context of materials synthesis, the (SiH₃)₃P compound was used to dope germanium for the first time by building a prototype p(++)Si(100)/i-Ge/n-Ge photodiode structure. The resultant n-type Ge layers contained active carrier concentrations of 3-4 × 10¹⁹ atoms cm⁻³ as determined by spectroscopic ellipsometry and confirmed by SIMS. Strain analysis using high resolution XRD yielded a Si content of 4 × 10²⁰ atoms cm⁻³ in agreement with SIMS and within the range expected for incorporating Si₃P type units into the diamond cubic Ge matrix. Extensive characterizations for structure, morphology and crystallinity indicate that the Si co-dopant plays essentially a passive role and does not compromise the device quality of the host material nor does it fundamentally alter its optical properties.

  8. Measurement of neutron flux by semiconductor detector; Merenje raspodele neutronskog fluksa poluprovodnickim detektorom

    Energy Technology Data Exchange (ETDEWEB)

    Obradovic, D; Bosevski, T [The Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Yugoslavia)

    1965-07-01

    Using semiconductor detectors for measuring the neutron flux distribution is considered suitable and faster than using activation foils. Results of radial neutron flux distribution obtained by semiconductor detectors are presented.

  9. Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

    Science.gov (United States)

    Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

    2008-11-01

    In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

  10. Decay Lengths for Diffusive Transport Activated by Andreev Reflections in Al/n-GaAs/Al Superconductor-Semiconductor-Superconductor Junctions

    DEFF Research Database (Denmark)

    Kutchinsky, Jonatan; Taboryski, Rafael Jozef; Clausen, Thomas

    1997-01-01

    In a highly doped GaAs semiconductor with superconducting contacts of Al, clear conductance peaks are observed at zero voltage bias and at V = +/-2 Delta/e, +/-Delta/e. The subharmonic energy gap structure originates from Andreev scattering with diffusive, but energy conserving, transport in the ...

  11. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  12. Laser activation-modification of semiconductor surfaces (LAMSS) of 1-alkenes on silicon: A ToF-SIMS, chemometrics, and AFM analysis

    International Nuclear Information System (INIS)

    Pei Lei; Jiang Guilin; Davis, Robert C.; Shaver, Jeremy M.; Smentkowski, Vincent S.; Asplund, Matthew C.; Linford, Matthew R.

    2007-01-01

    Laser-activation-modification of semiconductor surfaces (LAMSS) was carried out on silicon with a series of 1-alkenes. These laser spots were studied by time of flight secondary ion mass spectrometry (ToF-SIMS). The resulting spectra were analyzed using the multivariate curve resolution (MCR) method within the Automated eXpert Spectral Image Analysis (AXSIA) toolkit, and also by MCR and cluster analysis using commercially available toolboxes for Matlab: the PLS T oolbox and the MIA T oolbox, respectively. AXSIA based MCR generally finds three components for the spectral images: one for the background and two for the laser-activated spots, for both the positive and negative ion images. The negative ion component spectra from the spots show increased carbon and hydrogen signals compared to oxygen. They also show reduced chlorine and fluorine (contamination) peaks. In order to compare AXSIA-MCR results from different images, the AXSIA component spectra of different spots were further analyzed by principal components analysis (PCA). PCA of all of the negative ion components shows that component 1 is chemically distinct from components 2 and 3. PCA of all of the positive ion components yields the same result. The loadings plots of this PCA analysis confirm that component 1 generally contains fragments expected from the substrate, while components 2 and 3 contain fragments expected from an overlayer composed of alkyl chains in the spots. A comparison of the two MCR analyses suggests that roughly the same information can be obtained from AXSIA, which is not commercially available, and the PLS T oolbox. Cluster analysis of the data also clearly separates the spots from the backgrounds. A key finding from these analyses is that the degree of surface functionalization in a LAMSS spot appears to decrease radially from the center of the spot. Finally, a comparison of atomic force microscopy (AFM) of the spots versus the AXSIA analysis of the ToF-SIMS data produced another

  13. Laser activation-modification of semiconductor surfaces (LAMSS) of 1-alkenes on silicon: A ToF-SIMS, chemometrics, and AFM analysis

    Energy Technology Data Exchange (ETDEWEB)

    Pei Lei [Department of Chemistry and Biochemistry, Brigham Young University, Provo, UT 84602 (United States); Jiang Guilin [Department of Chemistry and Biochemistry, Brigham Young University, Provo, UT 84602 (United States); Department of Bioengineering, University of Washington, Seattle, WA (United States); Davis, Robert C. [Department of Physics and Astronomy, Brigham Young University, Provo, UT 84602 (United States); Shaver, Jeremy M. [Eigenvector Research Inc., Wenatchee, WA 98801 (United States); Smentkowski, Vincent S. [GE Global Research, 1 Research Circle, Niskayuna, NY (United States); Asplund, Matthew C. [Department of Chemistry and Biochemistry, Brigham Young University, Provo, UT 84602 (United States); Linford, Matthew R. [Department of Chemistry and Biochemistry, Brigham Young University, Provo, UT 84602 (United States)]. E-mail: mrlinford@chem.byu.edu

    2007-04-15

    Laser-activation-modification of semiconductor surfaces (LAMSS) was carried out on silicon with a series of 1-alkenes. These laser spots were studied by time of flight secondary ion mass spectrometry (ToF-SIMS). The resulting spectra were analyzed using the multivariate curve resolution (MCR) method within the Automated eXpert Spectral Image Analysis (AXSIA) toolkit, and also by MCR and cluster analysis using commercially available toolboxes for Matlab: the PLS{sub T}oolbox and the MIA{sub T}oolbox, respectively. AXSIA based MCR generally finds three components for the spectral images: one for the background and two for the laser-activated spots, for both the positive and negative ion images. The negative ion component spectra from the spots show increased carbon and hydrogen signals compared to oxygen. They also show reduced chlorine and fluorine (contamination) peaks. In order to compare AXSIA-MCR results from different images, the AXSIA component spectra of different spots were further analyzed by principal components analysis (PCA). PCA of all of the negative ion components shows that component 1 is chemically distinct from components 2 and 3. PCA of all of the positive ion components yields the same result. The loadings plots of this PCA analysis confirm that component 1 generally contains fragments expected from the substrate, while components 2 and 3 contain fragments expected from an overlayer composed of alkyl chains in the spots. A comparison of the two MCR analyses suggests that roughly the same information can be obtained from AXSIA, which is not commercially available, and the PLS{sub T}oolbox. Cluster analysis of the data also clearly separates the spots from the backgrounds. A key finding from these analyses is that the degree of surface functionalization in a LAMSS spot appears to decrease radially from the center of the spot. Finally, a comparison of atomic force microscopy (AFM) of the spots versus the AXSIA analysis of the ToF-SIMS data produced

  14. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  15. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  16. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  17. Reconfigurable engineered motile semiconductor microparticles.

    Science.gov (United States)

    Ohiri, Ugonna; Shields, C Wyatt; Han, Koohee; Tyler, Talmage; Velev, Orlin D; Jokerst, Nan

    2018-05-03

    Locally energized particles form the basis for emerging classes of active matter. The design of active particles has led to their controlled locomotion and assembly. The next generation of particles should demonstrate robust control over their active assembly, disassembly, and reconfiguration. Here we introduce a class of semiconductor microparticles that can be comprehensively designed (in size, shape, electric polarizability, and patterned coatings) using standard microfabrication tools. These custom silicon particles draw energy from external electric fields to actively propel, while interacting hydrodynamically, and sequentially assemble and disassemble on demand. We show that a number of electrokinetic effects, such as dielectrophoresis, induced charge electrophoresis, and diode propulsion, can selectively power the microparticle motions and interactions. The ability to achieve on-demand locomotion, tractable fluid flows, synchronized motility, and reversible assembly using engineered silicon microparticles may enable advanced applications that include remotely powered microsensors, artificial muscles, reconfigurable neural networks and computational systems.

  18. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  19. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  20. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  1. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  2. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  3. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  4. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  5. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  6. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  7. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  8. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  9. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  10. α-particle shielding of semiconductor device

    International Nuclear Information System (INIS)

    McKeown, P.J.A.; Perry, J.P.; Waddell, J.M.; Barker, K.D.

    1981-01-01

    Soft errors in semiconductor devices, e.g. random access memories, arising from the bombardment of the device by alpha particles produced by the disintegration of minute traces of uranium or thorium in the packaging materials are prevented by coating the active surface of the semiconductor chip with a thin layer, e.g. 20 to 100 microns of an organic polymeric material, this layer being of sufficient thickness to absorb the particles. Typically, the polymer is a poly-imide formed by u.v. electron-beam or thermal curing of liquid monomer applied to the chip surface. (author)

  11. Offshoring in the Semiconductor Industry: Historical Perspectives

    OpenAIRE

    Brown, Clair; Linden, Greg

    2005-01-01

    Semiconductor design is a frequently-cited example of the new wave of offshoring and foreign-outsourcing of service sector jobs. It is certainly a concern to U.S. design engineers themselves. In addition to the current wave of white-collar outsourcing, the industry also has a rich experience with offshoring of manufacturing activity. Semiconductor companies were among the first to invest in offshore facilities to manufacture goods for imports back to the U.S. A brief review of these earlie...

  12. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  13. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  14. Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

    CERN Document Server

    Seebauer, Edmund G

    2009-01-01

    The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

  15. All optical regeneration using semiconductor devices

    DEFF Research Database (Denmark)

    Mørk, Jesper; Öhman, Filip; Tromborg, Bjarne

    All-optical regeneration is a key functionality for implementing all-optical networks. We present a simple theory for the bit-error-rate in links employing all-optical regenerators, which elucidates the interplay between the noise and and nonlinearity of the regenerator. A novel device structure ...... is analyzed, emphasizing general aspects of active semiconductor waveguides....

  16. Temperature dependent electronic conduction in semiconductors

    International Nuclear Information System (INIS)

    Roberts, G.G.; Munn, R.W.

    1980-01-01

    This review describes the temperature dependence of bulk-controlled electronic currents in semiconductors. The scope of the article is wide in that it contrasts conduction mechanisms in inorganic and organic solids and also single crystal and disordered semiconductors. In many experimental situations it is the metal-semiconductor contact or the interface between two dissimilar semiconductors that governs the temperature dependence of the conductivity. However, in order to keep the length of the review within reasonable bounds, these topics have been largely avoided and emphasis is therefore placed on bulk-limited currents. A central feature of electronic conduction in semiconductors is the concentrations of mobile electrons and holes that contribute to the conductivity. Various statistical approaches may be used to calculate these densities which are normally strongly temperature dependent. Section 1 emphasizes the relationship between the position of the Fermi level, the distribution of quantum states, the total number of electrons available and the absolute temperature of the system. The inclusion of experimental data for several materials is designed to assist the experimentalist in his interpretation of activation energy curves. Sections 2 and 3 refer to electronic conduction in disordered solids and molecular crystals, respectively. In these cases alternative approaches to the conventional band theory approach must be considered. For example, the velocities of the charge carriers are usually substantially lower than those in conventional inorganic single crystal semiconductors, thus introducing the possibility of an activated mobility. Some general electronic properties of these materials are given in the introduction to each of these sections and these help to set the conduction mechanisms in context. (orig.)

  17. EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

    Science.gov (United States)

    Ólafsson, Sveinn; Sveinbjörnsson, Einar

    2010-12-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

  18. InP femtosecond mode-locked laser in a compound feedback cavity with a switchable repetition rate

    Science.gov (United States)

    Lo, Mu-Chieh; Guzmán, Robinson; Carpintero, Guillermo

    2018-02-01

    A monolithically integrated mode-locked semiconductor laser is proposed. The compound ring cavity is composed of a colliding pulse mode-locking (ML) subcavity and a passive Fabry-Perot feedback subcavity. These two 1.6 mm long subcavities are coupled by using on-chip reflectors at both ends, enabling harmonic mode locking. By changing DC-bias conditions, optical mode spacing from 50 to 450 GHz is experimentally demonstrated. Ultrafast pulses shorter than 0.3 ps emitted from this laser diode are shown in autocorrelation traces.

  19. Dopants and defects in semiconductors

    CERN Document Server

    McCluskey, Matthew D

    2012-01-01

    "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics … The book will be most useful for beginning graduate students in materials science. … an easy reading, broad introductory overview of the field …"-Materials Today, July-August 2012"… well written, with clear, lucid explanations …"-Chemistry World"The scientific development towards the method of controllable doping transformed the erratic and not reproducible family of semiconductor materials into the truly wonderful basis of modern microelectronics. This book tells the remarkable success story and I recommend it!"-Hans J. Queisser, Max-Planck-Institute, Stuttgart, Germany"McCluskey and Haller have written an outstanding modern guide to this field that will be useful to newcomers, and also to active researchers who want to broaden their horizons, as a means to learn the capabilities and limitations of the many techniques that are used in semiconductor-defect science."-Professor Michael J....

  20. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  1. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  2. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  3. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  4. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  5. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  6. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  8. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  9. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  10. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  12. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  13. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  14. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  15. Exploring carrier dynamics in semiconductors for slow light

    DEFF Research Database (Denmark)

    Mørk, Jesper; Xue, Weiqi; Chen, Yaohui

    2009-01-01

    We give an overview of recent results on slow and fast light in active semiconductor waveguides. The cases of coherent population oscillations as well as electromagnetically induced transparency are covered, emphasizing the physics and fundamental limitations.......We give an overview of recent results on slow and fast light in active semiconductor waveguides. The cases of coherent population oscillations as well as electromagnetically induced transparency are covered, emphasizing the physics and fundamental limitations....

  16. Comparison of modification strategies towards enhanced charge carrier separation and photocatalytic degradation activity of metal oxide semiconductors (TiO{sub 2}, WO{sub 3} and ZnO)

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S. Girish [Department of Physics, Indian Institute of Science, Bengaluru, 560012 Karnataka (India); Department of Chemistry, School of Engineering and Technology, CMR University, Bengaluru, 562149, Karnataka (India); Rao, K.S.R. Koteswara, E-mail: raoksrk@gmail.com [Department of Physics, Indian Institute of Science, Bengaluru, 560012 Karnataka (India)

    2017-01-01

    Graphical abstract: Semiconductor metal oxides: Modifications, charge carrier dynamics and photocatalysis. - Highlights: • TiO{sub 2}, WO{sub 3} and ZnO based photocatalysis is reviewed. • Advances to improve the efficiency are emphasized. • Differences and similarities in the modifications are highlighted. • Charge carrier dynamics for each strategy are discussed. - Abstract: Metal oxide semiconductors (TiO{sub 2}, WO{sub 3} and ZnO) finds unparalleled opportunity in wastewater purification under UV/visible light, largely encouraged by their divergent admirable features like stability, non-toxicity, ease of preparation, suitable band edge positions and facile generation of active oxygen species in the aqueous medium. However, the perennial failings of these photocatalysts emanates from the stumbling blocks like rapid charge carrier recombination and meager visible light response. In this review, tailoring the surface-bulk electronic structure through the calibrated and veritable approaches such as impurity doping, deposition with noble metals, sensitizing with other compounds (dyes, polymers, inorganic complexes and simple chelating ligands), hydrogenation process (annealing under hydrogen atmosphere), electronic integration with other semiconductors, modifying with carbon nanostructures, designing with exposed facets and tailoring with hierarchical morphologies to overcome their critical drawbacks are summarized. Taking into account the materials intrinsic properties, the pros and cons together with similarities and striking differences for each strategy in specific to TiO{sub 2}, WO{sub 3} & ZnO are highlighted. These subtlety enunciates the primacy for improving the structure-electronic properties of metal oxides and credence to its fore in the practical applications. Future research must focus on comparing the performances of ZnO, TiO{sub 2} and WO{sub 3} in parallel to get insight into their photocatalytic behaviors. Such comparisons not only reveal

  17. Semiconductor processing with excimer lasers

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

  18. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  19. Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

    Science.gov (United States)

    Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

    2015-12-23

    We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

  20. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  1. Introduction to the Physics of Diluted Magnetic Semiconductors

    CERN Document Server

    Gaj, Jan A

    2010-01-01

    The book deals with diluted magnetic semiconductors, a class of materials important to the emerging field of spintronics. In these materials semiconducting properties, both transport and optical, are influenced by the presence of magnetic ions. It concentrates on basic physical mechanisms (e.g. carrier-ion and ion-ion interactions) and resulting phenomena (e.g. magnetic polaron formation and spin relaxation). Introduction to the Physics of Diluted Magnetic Semiconductors is addressed to graduate-level and doctoral students and young researchers entering the field. The authors have been actively involved in the creation of this branch of semiconductor physics.

  2. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  3. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  4. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  5. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  6. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  7. Ag-based semiconductor photocatalysts in environmental purification

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jiade; Fang, Wen [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Yu, Changlin, E-mail: yuchanglinjx@163.com [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); School of Environment Engineering and biology Engineering, Guangdong University of Petrochemical Technology, Maoming, 525000 Guangdong Province (China); Zhou, Wanqin [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); State Key Laboratory of Photocatalysis on Energy and Environment, Fuzhou University, Fuzhou, 350002 (China); Zhu, Lihua [School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou 341000, Jiangxi Province (China); Xie, Yu, E-mail: xieyu_121@163.com [College of Environment and Chemical Engineering, Nanchang Hangkong University, Nanchang 330063, Jiangxi (China)

    2015-12-15

    Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO{sub 2}, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

  8. Ag-based semiconductor photocatalysts in environmental purification

    International Nuclear Information System (INIS)

    Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; Zhu, Lihua; Xie, Yu

    2015-01-01

    Graphical abstract: Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Formation of heterojunction could largely promote the electron/hole pair separation, resulting in highly photocatalytic activity and stability. - Highlights: • Recent research progress in the fabrication and application of Ag-based semiconductor photocatalyts. • The advantages and disadvantages of Ag-based semiconductor as photocatalysts. • Strategies in design Ag-based semiconductor photocatalysts with high performance. - Abstract: Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO 2 , ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag

  9. Biologically inspired flexible quasi-single-mode random laser: An integration of Pieris canidia butterfly wing and semiconductors

    Science.gov (United States)

    Wang, Cih-Su; Chang, Tsung-Yuan; Lin, Tai-Yuan; Chen, Yang-Fang

    2014-10-01

    Quasi-periodic structures of natural biomaterial membranes have great potentials to serve as resonance cavities to generate ecological friendly optoelectronic devices with low cost. To achieve the first attempt for the illustration of the underlying principle, the Pieris canidia butterfly wing was embedded with ZnO nanoparticles. Quite interestingly, it is found that the bio-inspired quasi-single-mode random laser can be achieved by the assistance of the skeleton of the membrane, in which ZnO nanoparticles act as emitting gain media. Such unique characteristics can be interpreted well by the Fabry-Perot resonance existing in the window-like quasi-periodic structure of butterfly wing. Due to the inherently promising flexibility of butterfly wing membrane, the laser action can still be maintained during the bending process. Our demonstrated approach not only indicates that the natural biological structures can provide effective scattering feedbacks but also pave a new avenue towards designing bio-controlled photonic devices.

  10. Biologically inspired flexible quasi-single-mode random laser: an integration of Pieris canidia butterfly wing and semiconductors.

    Science.gov (United States)

    Wang, Cih-Su; Chang, Tsung-Yuan; Lin, Tai-Yuan; Chen, Yang-Fang

    2014-10-23

    Quasi-periodic structures of natural biomaterial membranes have great potentials to serve as resonance cavities to generate ecological friendly optoelectronic devices with low cost. To achieve the first attempt for the illustration of the underlying principle, the Pieris canidia butterfly wing was embedded with ZnO nanoparticles. Quite interestingly, it is found that the bio-inspired quasi-single-mode random laser can be achieved by the assistance of the skeleton of the membrane, in which ZnO nanoparticles act as emitting gain media. Such unique characteristics can be interpreted well by the Fabry-Perot resonance existing in the window-like quasi-periodic structure of butterfly wing. Due to the inherently promising flexibility of butterfly wing membrane, the laser action can still be maintained during the bending process. Our demonstrated approach not only indicates that the natural biological structures can provide effective scattering feedbacks but also pave a new avenue towards designing bio-controlled photonic devices.

  11. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  12. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  13. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  14. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  15. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  16. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  17. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  18. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  19. 78 FR 40427 - Foreign-Trade Zone (FTZ) 183-Austin, Texas; Notification of Proposed Production Activity; Samsung...

    Science.gov (United States)

    2013-07-05

    ..., Texas; Notification of Proposed Production Activity; Samsung Austin Semiconductor, LLC (Semiconductors); Austin, Texas Samsung Austin Semiconductor, LLC (Samsung), operator of Subzone 183B, submitted a... June 26, 2013. Samsung currently has authority to produce semiconductor memory devices for export...

  20. Evaluation of NDA techniques applying to the measurement of alpha-activities in medium or low level radioactive reprocessing wastes (part 5). The development of LiF coating semiconductor detector

    Energy Technology Data Exchange (ETDEWEB)

    Hattori, Takatoshi; Ishii, Keiichiro [Central Research Inst. of Electric Power Industry, Komae, Tokyo (Japan). Komae Research Lab.

    1988-12-01

    In order to design the neutron detection system in the non-destructive assay device applying to the measurement of alpha-activity in medium or low level radioactive reprocessing wastes, we examined the property of the LiF coating semiconductor detector applying to gamma-radiation field. The sensitivity for thermal neutron of LiF coating ion implanted detector is 1.6 cps/nv, and reduced to half in about 300 R/h gamma-radiation field. Compared with the other neutron detectors, for example proportional counters, the performance of this detector is almost similar to that of them. This new detector has a merit to be possible to use a dry battery instead of a high voltage supply. (author).

  1. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  2. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  3. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  4. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  5. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  6. Microwave assisted synthesis and characterisation of a zinc oxide/tobacco mosaic virus hybrid material. An active hybrid semiconductor in a field-effect transistor device

    Directory of Open Access Journals (Sweden)

    Shawn Sanctis

    2015-03-01

    Full Text Available Tobacco mosaic virus (TMV has been employed as a robust functional template for the fabrication of a TMV/zinc oxide field effect transistor (FET. A microwave based approach, under mild conditions was employed to synthesize stable zinc oxide (ZnO nanoparticles, employing a molecular precursor. Insightful studies of the decomposition of the precursor were done using NMR spectroscopy and material characterization of the hybrid material derived from the decomposition was achieved using dynamic light scattering (DLS, transmission electron microscopy (TEM, grazing incidence X-ray diffractometry (GI-XRD and atomic force microscopy (AFM. TEM and DLS data confirm the formation of crystalline ZnO nanoparticles tethered on top of the virus template. GI-XRD investigations exhibit an orientated nature of the deposited ZnO film along the c-axis. FET devices fabricated using the zinc oxide mineralized virus template material demonstrates an operational transistor performance which was achieved without any high-temperature post-processing steps. Moreover, a further improvement in FET performance was observed by adjusting an optimal layer thickness of the deposited ZnO on top of the TMV. Such a bio-inorganic nanocomposite semiconductor material accessible using a mild and straightforward microwave processing technique could open up new future avenues within the field of bio-electronics.

  7. Surface-micromachined Bragg Reflectors Based on Multiple Airgap/SiO2 Layers for CMOS-compatible Fabry-perot Filters in the UV-visible Spectral Range

    NARCIS (Netherlands)

    Ghaderi, M.; Ayerden, N.P.; De Graaf, G.; Wolffenbuttel, R.F.

    2014-01-01

    In CMOS-compatible optical filter designs, SiO2 is often used as the low-index material, limiting the optical contrast (nHi/nLo) to about 2. Using the air as low-index material improves the optical contrast by about 50%, thus increasing the reflectivity and bandwidth at a given design complexity.

  8. Climatologies of nighttime upper thermospheric winds measured by ground-based Fabry-Perot interferometers during geomagnetically quiet conditions: 2. High-latitude circulation and interplanetary magnetic field dependence

    DEFF Research Database (Denmark)

    Emmert, J.T.; Hernandez, G.; Jarvis, M.J.

    2006-01-01

    We analyze upper thermospheric (similar to 250 km) nighttime horizontal neutral wind patterns, during geomagnetically quiet (Kp S), Halley (76 degrees S, 27 degrees W), Millstone Hill (43 degrees N, 72 degrees W), Sondre...

  9. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  10. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  11. Understanding Electrically Active Interface Formation on Wide Bandgap Semiconductors through Molecular Beam Epitaxy Using Fe3O 4 for Spintronics as a Base Case

    Science.gov (United States)

    Hamedani Golshan, Negar

    Nanoelectronics, complex heterostructures, and engineered 3D matrix materials are quickly advancing from research possibilities to manufacturing challenges for applications ranging from high-power devices to solar cells to any number of novel multifunctional sensors and controllers. Formation of an abrupt and effective interface is one of the basic requirements for integration of functional materials on different types of semiconductors (from silicon to the wide bandgaps) which can significantly impact the functionality of nanoscale electronic devices. To realize the potential of next-generation electronics, the understanding and control of those initial stages of film layer formation must be understood and translated to a process that can control the initial stages of film deposition. Thin film Fe3O4 has attracted much attention as a material for exploring the potential of spintronics in next-generation information technologies. Synthesis of highly spin-polarized material as spin sources, in combination with wide bandgap semiconductors which have a long spin relaxation time in addition to functionality in high-temperature, high-power, and high-frequency environments, would enhance the performance of today's spintronic devices. Spinel ferrite Fe3O4 has a high Curie temperature of 858 K and it is predicted to possess half-metallic properties, i.e. 100% spin polarization at the Fermi level, which can lead to ultrahigh tunneling magnetoresistance at room temperature. However, these properties have been very difficult to realize in thin film form, and device design strategies require high-quality thin films of Fe3O4. The most common reason reported in literature for the failure of the films to achieve theoretical performance is that the growth techniques used today produce films with antiphase boundaries (APB). These APBs have a strong antiferromagnetic coupling that negatively impact the magnetic and transport properties of epitaxial Fe 3O4 films. Therefore, greater

  12. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  13. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  14. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  15. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  16. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  17. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  18. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  19. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  20. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  1. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  2. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  3. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  4. A critical analysis of radiation-matter interaction

    International Nuclear Information System (INIS)

    Milani, M.; Previdi, F.

    2000-01-01

    A general re-thinking of the interaction of matter with radiation in terms of cooperative phenomena and emergent properties may turn out to be necessary, together with a reflection concerning the set of the elementary processes involved and their possible representations. From a foundational point of view, this provides a stimulus to reconsider the bases of the current approaches with a critical mind. In this paper are presented the basically features of this approach, leading to the realization of a CA model for a microscopic treatment of matter-radiation interaction in terms of the local elementary processes of interaction. In the following section it is presented a survey of the characteristics of modern integrated optics devices, and then in sect. 3 some of the problems affecting their design, which have represented the starting point of our reflections. In sect. 4 it has been described the CA approach. A comparison between the two approaches from a general point of view is worked out in sect. 5. The ability of CA models to provide in general a previously not-grasped insight into the matter light interaction will be tested in two different fields of application, namely: i) in modelling semiconductor laser sources; ii) in describing the propagation of an electromagnetic field in solution of proteins. The application of the CA approach to the first specific case of study is reported in sect. 6. It shall be seen in particular how this approach permits, in this case, to reobtain the characteristic curves, and to follow the optical damage dynamics of a semiconductor laser diode, this latter being an issue currently out of reach with standard modelling approaches. Furthermore, it shall be given a brief sketch of how the model can be extended to take into account phase-dependent effects, i.e. to simulate a Fabry-Perot resonator. A model comprising the features of the semiconductor laser and of the Fabry-Perot resonator provides the possibility to tackle the simulation

  5. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  6. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  7. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  8. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  9. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  10. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  11. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  12. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  13. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  14. Ripening of Semiconductor Nanoplatelets.

    Science.gov (United States)

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  15. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  16. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  17. Semiconductor acceleration sensor

    Science.gov (United States)

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  18. Self Organization in Compensated Semiconductors

    Science.gov (United States)

    Berezin, Alexander A.

    2004-03-01

    In partially compensated semiconductor (PCS) Fermi level is pinned to donor sub-band. Due to positional randomness and almost isoenergetic hoppings, donor-spanned electronic subsystem in PCS forms fluid-like highly mobile collective state. This makes PCS playground for pattern formation, self-organization, complexity emergence, electronic neural networks, and perhaps even for origins of life, bioevolution and consciousness. Through effects of impact and/or Auger ionization of donor sites, whole PCS may collapse (spinodal decomposition) into microblocks potentially capable of replication and protobiological activity (DNA analogue). Electronic screening effects may act in RNA fashion by introducing additional length scale(s) to system. Spontaneous quantum computing on charged/neutral sites becomes potential generator of informationally loaded microstructures akin to "Carl Sagan Effect" (hidden messages in Pi in his "Contact") or informational self-organization of "Library of Babel" of J.L. Borges. Even general relativity effects at Planck scale (R.Penrose) may affect the dynamics through (e.g.) isotopic variations of atomic mass and local density (A.A.Berezin, 1992). Thus, PCS can serve as toy model (experimental and computational) at interface of physics and life sciences.

  19. Spherical distribution structure of the semiconductor laser diode stack for pumping

    International Nuclear Information System (INIS)

    Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

    2011-01-01

    A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

  20. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  1. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    Science.gov (United States)

    Calvez, S.; Adams, M. J.

    2012-09-01

    Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

  2. Transparent Oxide Semiconductors for Emerging Electronics

    KAUST Repository

    Caraveo-Frescas, Jesus Alfonso

    2013-11-01

    Transparent oxide electronics have emerged as promising materials to shape the future of electronics. While several n-type oxides have been already studied and demonstrated feasibility to be used as active materials in thin film transistors, high performance p-type oxides have remained elusive. This dissertation is devoted to the study of transparent p-type oxide semiconductor tin monoxide and its use in the fabrication of field effect devices. A complete study on the deposition of tin monoxide thin films by direct current reactive magnetron sputtering is performed. Carrier density, carrier mobility and conductivity are studied over a set of deposition conditions where p-type conduction is observed. Density functional theory simulations are performed in order to elucidate the effect of native defects on carrier mobility. The findings on the electrical properties of SnO thin films are then translated to the fabrication of thin films transistors. The low processing temperature of tin monoxide thin films below 200 oC is shown advantageous for the fabrication of fully transparent and flexible thin film transistors. After careful device engineering, including post deposition annealing temperature, gate dielectric material, semiconductor thickness and source and drain electrodes material, thin film transistors with record device performance are demonstrated, achieving a field effect mobility >6.7 cm2V-1s-1. Device performance is further improved to reach a field effect mobility of 10.8 cm2V-1s-1 in SnO nanowire field effect transistors fabricated from the sputtered SnO thin films and patterned by electron beam lithography. Downscaling device dimension to nano scale is shown beneficial for SnO field effect devices not only by achieving a higher hole mobility but enhancing the overall device performance including better threshold voltage, subthreshold swing and lower number of interfacial defects. Use of p-type semiconductors in nonvolatile memory applications is then

  3. Where science fiction meets reality? With oxide semiconductors.

    Energy Technology Data Exchange (ETDEWEB)

    Fortunato, E.; Martins, R. [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa, CEMOP-UNINOVA, 2829-516 Caparica (Portugal)

    2011-09-15

    Transparent electronics is today one of the most advanced topics for a wide range of device applications, where the key components are wide band gap semiconductors, where oxides of different origin play an important role, not only as passive components but also as active components similar to what we observe in conventional semiconductors. As passive components they include the use of these materials as dielectrics for a wide range of electronic devices and also as transparent electrical conductors for use in several optoelectronic applications, such as liquid crystal displays, organic light emitting diodes, solar cells, optical sensors etc. As active materials, they exploit the use of truly electronic semiconductors where the main emphasis is being put on transparent thin film transistors, light emitting diodes, lasers, ultraviolet sensors and integrated circuits among others. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Problems and progress in radiation physics of semiconductors

    International Nuclear Information System (INIS)

    Vinetskij, V.L.

    1982-01-01

    A survey of the current status of radiation physics of semiconductors comprises the analysis of some new problems and poses the statement of concern. The essential difference between the probability of interstitial-vacancy pair occurrence W(T) in elastic collisions and the generally accepted step distribution with a typical ''threshold'' energy Tsub(d) is indicated. The role of diffusion and reaction evolution of primary defects leading to specific properties of the cluster formation process is shown. Special features of defect formation in spatially inhomogeneous semiconductors, in particular for elastic stresses present, are described. Among most important advances in the radiation physics of semiconductors there are the discovery of non-activation motion of the ''extra'' atom in silicon, the observation of a low activation energy value for the vacancy diffusion, the understanding of subthreshold mechanism of defect formation and radiation-induced diffusion, the effects of laser annealing of defects and oriented crystallization

  5. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  6. Simulation of semiconductor devices

    International Nuclear Information System (INIS)

    Oriato, D.

    2001-09-01

    In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system

  7. 75 FR 9438 - Samsung Austin Semiconductor, LLC, DRAM Fab 1, a Subsidiary of Samsung Electronics Corporation...

    Science.gov (United States)

    2010-03-02

    ... Semiconductor, LLC, DRAM Fab 1, a Subsidiary of Samsung Electronics Corporation, Including On-Site Leased... Semiconductor, LLC, a subsidiary of Samsung Electronics Corporation, DRAM Fab 1, including on-site leased.... The workers are engaged in activities related to the production of DRAM chips for use in electronics...

  8. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  9. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  10. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  11. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  12. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  13. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  14. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  15. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  16. Wide gap semiconductor microwave devices

    International Nuclear Information System (INIS)

    Buniatyan, V V; Aroutiounian, V M

    2007-01-01

    A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

  17. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  18. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  19. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  20. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  1. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  2. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  3. Status of the low frequency facility experiment

    International Nuclear Information System (INIS)

    Bracci, L; Calamai, G; Cuoco, E; Dominici, P; Fabbroni, L; Guidi, G; Losurdo, G; Martelli, F; Mazzoni, M; Stanga, R; Vetrano, F; Porzio, A; Ricciardi, I; Solimeno, S; Ballardin, G; Braccini, S; Bradaschia, C; Casciano, C; Cavalieri, R; Cecchi, R; Cella, G; Dattilo, V; Virgilio, A Di; Fazzi, M; Ferrante, I; Fidecaro, F; Frasconi, F; Gennaro, G; Giazotto, A; Holloway, L; Penna, P La; Lomtadze, T; Nenci, F; Nicolosi, L; Lelli, F; Paoletti, F; Pasqualetti, A; Passaquieti, R; Passuello, D; Poggiani, R; Raffaelli, F; Taddei, R; Vicere, A; Zhang, Z; Frasca, S; Majorana, E; Palomba, C; Perciballi, M; Puppo, P; Rapagnani, P; Ricci, F

    2002-01-01

    The low frequency facility is a VIRGO R and D experiment having the goal of performing a direct measurement of the thermal noise of the VIRGO suspensions by means of a two-mirror Fabry-Perot cavity suspended to the last stage of the attenuating chain. The present status of advancement of this experiment is reported: the apparatus, including mechanical and optical parts, has been completely built and put into operation. Vacuum facilities and the first control loops are active. First measurements on the suspended cavity are in progress

  4. Electronically controllable spoof localized surface plasmons

    Science.gov (United States)

    Zhou, Yong Jin; Zhang, Chao; Yang, Liu; Xun Xiao, Qian

    2017-10-01

    Electronically controllable multipolar spoof localized surface plasmons (LSPs) are experimentally demonstrated in the microwave frequencies. It has been shown that half integer order LSPs modes exist on the corrugated ring loaded with a slit, which actually arise from the Fabry-Perot-like resonances. By mounting active components across the slit in the corrugated rings, electronic switchability and tunability of spoof LSPs modes have been accomplished. Both simulated and measured results demonstrate efficient dynamic control of the spoof LSPs. These elements may form the basis of highly integrated programmable plasmonic circuits in microwave and terahertz regimes.

  5. Status of the low frequency facility experiment

    Energy Technology Data Exchange (ETDEWEB)

    Bracci, L [Dipartimento di Fisica, Universita di Firenze, Florence (Italy); Calamai, G [Istituto Nazionale di Fisica Nucleare, Sez Firenze/Urbino (Italy); Cuoco, E [Istituto Nazionale di Fisica Nucleare, Sez Firenze/Urbino (Italy); Dominici, P [Dipartimento di Fisica, Universita di Firenze, Firenze (Italy); Fabbroni, L [Istituto Nazionale di Fisica Nucleare, Sez Firenze/Urbino (Italy); Guidi, G [Dipartimento di Fisica, Universita di Urbino, Urbino (Italy); Losurdo, G [Istituto Nazionale di Fisica Nucleare, Sez Firenze/Urbino (Italy); Martelli, F [Istituto Nazionale di Fisica Nucleare, Sez Firenze/Urbino (Italy); Mazzoni, M [Istituto Nazionale di Fisica Nucleare, Sez Firenze/Urbino (Italy); Stanga, R [Istituto Nazionale di Fisica Nucleare, Sez Firenze/Urbino (Italy); Vetrano, F [Dipartimento di Fisica, Universita di Urbino, Urbino (Italy); Porzio, A [Istituto Nazionale di Fisica Nucleare, Sez Naples (Italy); Ricciardi, I [Istituto Nazionale di Fisica Nucleare, Sez Naples (Italy); Solimeno, S [Istituto Nazionale di Fisica Nucleare, Sez Naples (Italy); Ballardin, G [Istituto Nazionale di Fisica Nucleare, Sez Pisa (Italy); Braccini, S [Istituto Nazionale di Fisica Nucleare, Sez Pisa (Italy); Bradaschia, C [Istituto Nazionale di Fisica Nucleare, Sez Pisa (Italy); Casciano, C [Istituto Nazionale di Fisica Nucleare, Sez Pisa (Italy); Cavalieri, R [Istituto Nazionale di Fisica Nucleare, Sez Pisa (Italy); Cecchi, R [Istituto Nazionale di Fisica Nucleare, Sez Pisa (Italy); Cella, G [Istituto Nazionale di Fisica Nucleare, Sez Pisa (Italy); Dattilo, V [Istituto Nazionale di Fisica Nucleare, Sez Pisa (Italy); Virgilio, A Di [Istituto Nazionale di Fisica Nucleare, Sez Pisa (Italy); Fazzi, M [Istituto Nazionale di Fisica Nucleare, Sez Pisa (Italy); Ferrante, I [Istituto Nazionale di Fisica Nucleare, Sez Pisa (Italy); Fidecaro, F [Istituto Nazionale di Fisica Nucleare, Sez Pisa (Italy)] [and others

    2002-04-07

    The low frequency facility is a VIRGO R and D experiment having the goal of performing a direct measurement of the thermal noise of the VIRGO suspensions by means of a two-mirror Fabry-Perot cavity suspended to the last stage of the attenuating chain. The present status of advancement of this experiment is reported: the apparatus, including mechanical and optical parts, has been completely built and put into operation. Vacuum facilities and the first control loops are active. First measurements on the suspended cavity are in progress.

  6. Second harmonic generation in nanoscale films of transition metal dichalcogenide: Accounting for multipath interference

    Directory of Open Access Journals (Sweden)

    A. V. Kudryavtsev

    2016-09-01

    Full Text Available The transfer matrix method has been widely used to calculate wave propagation through the layered structures consisting entirely of either linear or nonlinear optical materials. In the present work, we develop the transfer matrix method for structures consisting of alternating layers of linear and nonlinear optical materials. The result is presented in a form that allows one to directly substitute the values of material constants, refractive index and absorption coefficient, into the expressions describing the second harmonic generation (SHG field. The model is applied to the calculation of second harmonic (SH field generated in nano-thin layers of transition metal dichalcogenides exfoliated on top of silicon oxide/silicon Fabry-Perot cavity. These structures are intensively studied both in view of their unique properties and perspective applications. A good agreement between experimental and numerical results can be achieved by small modification of optical constants, which may arise in an experiment due to a strong electric field of an incident focused pump laser beam. By considering the SHG effect, this paper completes the series of works describing the role of Fabry-Perot cavity in different optical effects (optical reflection, photoluminescence and Raman scattering in 2D semiconductors that is extremely important for characterization of these unique materials.

  7. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  8. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  9. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  10. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  11. Nonlinear Refractive Index Measurement in Semiconductor-Doped Glasses

    Directory of Open Access Journals (Sweden)

    M. t. Tavassoli

    1997-04-01

    Full Text Available   There are several techniques in use for non-linear refractive index measurement, namely, interferometric techniques, in which conventional inter-ferometers are used, degenerate for wave mixing (DFWM, and z-scan, Each of these techniques suffers from some shortcmings. For example conventional interferometers like Fabry-Perot and Twyman-Green need high quality optical components, unwanted reflections on these components produce noise, and the device limits the probe-pump anglc, or in z-scan technique one needs very sensitive detectors and since the intensity is monitored by the nonlinear absorption, which is usually present, reduces the measurement accuracy.   In the techniqucs introduced here, in principle, only a plate of the sample is required, and even parallelism of the plate surfaces is not curcial. Experiments can be carried out successfully if the angle between the plate surface is less than few minutes. In the first technique, the probe beam strikes the surface at an arbitray angle of incidence. The reflected beam from the two surfaces of the sample interfere on a photo-sensitive screen like CCD, and more or less linear interference fringes are produced. When the pump beam is switched on, the interference pattern deforms. The amount and the direction of the deformation give the value and the sign of the non-linear refractive index. In this technique the probe-pump angle can be varied from 00 to 1900.  In the second technique, interference between the reflected probe beam from the sample and the diffracted pump beam from the grating induced by the interference of the probe and the pump beams, leads to a series of circular fringes. When the non-linear sample is replaced by a linear material like fuse silica glass, the above mentioned circular fringes are formed, but the number of fringes in a specified angular interval remains fixed as the pump beam intensity increases. But, in the case of a non-linear sample the number changes due to

  12. Nuclear radiation detection by a variband semiconductor

    International Nuclear Information System (INIS)

    Volkov, A.S.

    1981-01-01

    Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

  13. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  14. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  15. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  16. Automation and Integration in Semiconductor Manufacturing

    OpenAIRE

    Liao, Da-Yin

    2010-01-01

    Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

  17. Offshoring in the Semiconductor Industry: A Historical Perspective

    OpenAIRE

    Brown, Clair; Linden, Greg

    2005-01-01

    Semiconductor design is a frequently-cited example of the new wave of offshoring and foreign-outsourcing of service sector jobs. It is certainly a concern to U.S. design engineers themselves. In addition to the current wave of white-collar outsourcing, the industry also has a rich experience with offshoring of manufacturing activity. Semiconductor companies were among the first to invest in offshore facilities to manufacture goods for imports back to the U.S. A brief review of these...

  18. Disorder-tuned charge transport in organic semiconductors

    Science.gov (United States)

    Xu, Feng; Qiu, Dong; Yan, Dadong

    2013-02-01

    We propose that the polaron transport in organic semiconductors is remarkably tuned by the fluctuation of polarization energy. The tuning effect of energetic fluctuation not only causes a continuous transition from non-Arrhenius to Arrhenius temperature activated charge transport with increasing moderate disorder strengths but also results in a band-like conduction in the low disorder regime which benefits from the enhanced mobilities in shallow trap states. As a result, a unified description of polaron transport is obtained for a set of typical organic semiconductors.

  19. Semiconductor nanostructures for infrared applications

    NARCIS (Netherlands)

    Zurauskiene, N.; Asmontas, S.; Dargys, A.; Kundrotas, J.; Janssen, G.; Goovaerts, E.; Marcinkevicius, S.; Koenraad, P.M.; Wolter, J.H.; Leon, R.

    2004-01-01

    We present the results of time-resolved photoluminescence (TRPL) and optically detected microwave resonance (ODMR) spectroscopy investigations of semiconductor quantum dots and quantum wells. The ODMR spectra of InAs/GaAs QDs were detected via modulation of the total intensity of the QDs emission

  20. A Brief History of ... Semiconductors

    Science.gov (United States)

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  1. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  2. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  3. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

  4. Radiation damage in semiconductor detectors

    International Nuclear Information System (INIS)

    Kraner, H.W.

    1981-12-01

    A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced

  5. OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES

    Energy Technology Data Exchange (ETDEWEB)

    Grant, C D; Zhang, J Z

    2007-09-28

    This chapter provides an overview of some recent research activities on the study of optical and dynamic properties of semiconductor nanomaterials. The emphasis is on unique aspects of these properties in nanostructures as compared to bulk materials. Linear, including absorption and luminescence, and nonlinear optical as well as dynamic properties of semiconductor nanoparticles are discussed with focus on their dependence on particle size, shape, and surface characteristics. Both doped and undoped semiconductor nanomaterials are highlighted and contrasted to illustrate the use of doping to effectively alter and probe nanomaterial properties. Some emerging applications of optical nanomaterials are discussed towards the end of the chapter, including solar energy conversion, optical sensing of chemicals and biochemicals, solid state lighting, photocatalysis, and photoelectrochemistry.

  6. Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors

    Science.gov (United States)

    Schöll, Eckehard

    2005-08-01

    Nonlinear transport phenomena are an increasingly important aspect of modern semiconductor research. This volume deals with complex nonlinear dynamics, pattern formation, and chaotic behavior in such systems. It bridges the gap between two well-established fields: the theory of dynamic systems and nonlinear charge transport in semiconductors. This unified approach helps reveal important electronic transport instabilities. The initial chapters lay a general framework for the theoretical description of nonlinear self-organized spatio-temporal patterns, such as current filaments, field domains, fronts, and analysis of their stability. Later chapters consider important model systems in detail: impact ionization induced impurity breakdown, Hall instabilities, superlattices, and low-dimensional structures. State-of-the-art results include chaos control, spatio-temporal chaos, multistability, pattern selection, activator-inhibitor kinetics, and global coupling, linking fundamental issues to electronic device applications. This book will be of great value to semiconductor physicists and nonlinear scientists alike.

  7. Quantum Dot Semiconductor Optical Amplifiers - Physics and Applications

    DEFF Research Database (Denmark)

    Berg, Tommy Winther

    2004-01-01

    This thesis describes the physics and applications of quantum dot semiconductor optical amplifiers based on numerical simulations. These devices possess a number of unique properties compared with other types of semiconductor amplifiers, which should allow enhanced performance of semiconductor...... respects is comparable to those of fiber amplifiers. The possibility of inverting the optically active states to a large degree is essential in order to achieve this performance. Optical signal processing through cross gain modulation and four wave mixing is modeled and described. For both approaches...... and QW devices and to experiments on quantum dot amplifiers. These comparisons outline the qualitative differences between the different types of amplifiers. In all cases focus is put on the physical processes responsible the differences....

  8. Janus droplets: liquid marbles coated with dielectric/semiconductor particles.

    Science.gov (United States)

    Bormashenko, Edward; Bormashenko, Yelena; Pogreb, Roman; Gendelman, Oleg

    2011-01-04

    The manufacturing of water droplets wrapped with two different powders, carbon black (semiconductor) and polytetrafluoroethylene (dielectric), is presented. Droplets composed of two hemispheres (Janus droplets) characterized by various physical and chemical properties are reported first. Watermelon-like striped liquid marbles are reported. Janus droplets remained stable on solid and liquid supports and could be activated with an electric field.

  9. High power semiconductor switching in the nanosecond regime

    International Nuclear Information System (INIS)

    Zucker, O.S.; Long, J.R.; Smith, V.L.; Page, D.J.; Roberts, J.S.

    1975-12-01

    Light activated multilayered silicon semiconductor devices have been used to switch at megawatt power levels with nanosecond turnon time. Current rate of rise of 700 kA/μs at 10 kA, with 1 kV across the load have been achieved. Recovery time of 1 millisec has been obtained. Applicability to fusion research needs is discussed

  10. Technician Training for the Semiconductor Microdevices Industry. Final Report.

    Science.gov (United States)

    Center for Occupational Research and Development, Inc., Waco, TX.

    The Center for Occupational Research and Development (CORD) carried out four activities to foster semiconductor manufacturing technician (SMT) training: (1) collaboration with industry experts and educators while developing a curriculum to train SMTs; (2) implementation and testing of the curriculum at a technical college; (3) dissemination of…

  11. Two-Dimensional Charge Transport in Disordered Organic Semiconductors

    NARCIS (Netherlands)

    Brondijk, J. J.; Roelofs, W. S. C.; Mathijssen, S. G. J.; Shehu, A.; Cramer, T.; Biscarini, F.; Blom, P. W. M.; de Leeuw, D. M.

    2012-01-01

    We analyze the effect of carrier confinement on the charge-transport properties of organic field-effect transistors. Confinement is achieved experimentally by the use of semiconductors of which the active layer is only one molecule thick. The two-dimensional confinement of charge carriers provides

  12. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  13. Synthesis and characterization of a new organic semiconductor material

    Energy Technology Data Exchange (ETDEWEB)

    Tiffour, Imane [Laboratoire de Génie Physique, Département de Physique, Université de Tiaret, Tiaret 14000 (Algeria); Faculté des Sciences et Technologies, Université Mustapha Stambouli, Mascara 29000 (Algeria); Dehbi, Abdelkader [Laboratoire de Génie Physique, Département de Physique, Université de Tiaret, Tiaret 14000 (Algeria); Mourad, Abdel-Hamid I., E-mail: ahmourad@uaeu.ac.ae [Mechanical Engineering Department, Faculty of Engineering, United Arab Emirates University, Al-Ain, P.O. Box 15551 (United Arab Emirates); Belfedal, Abdelkader [Faculté des Sciences et Technologies, Université Mustapha Stambouli, Mascara 29000 (Algeria); LPCMME, Département de Physique, Université d' Oran Es-sénia, 3100 Oran (Algeria)

    2016-08-01

    The objective of this study is to create an ideal mixture of Acetaminophen/Curcumin leading to a new and improved semiconductor material, by a study of the electrical, thermal and optical properties. This new material will be compared with existing semiconductor technology to discuss its viability within the industry. The electrical properties were investigated using complex impedance spectroscopy and optical properties were studied by means of UV-Vis spectrophotometry. The electric conductivity σ, the dielectric constant ε{sub r}, the activation energy E{sub a}, the optical transmittance T and the gap energy E{sub g} have been investigated in order to characterize our organic material. The electrical conductivity of the material is approximately 10{sup −5} S/m at room temperature, increasing the temperature causes σ to increase exponentially to approximately 10{sup −4} S/m. The activation energy obtained for the material is equal to 0.49 ± 0.02 ev. The optical absorption spectra show that the investigating material has absorbance in the visible range with a maximum wavelength (λ{sub max}) 424 nm. From analysis, the absorption spectra it was found the optical band gap equal to 2.6 ± 0.02 eV and 2.46 ± 0.02 eV for the direct and indirect transition, respectively. In general, the study shows that the developed material has characteristics of organic semiconductor material that has a promising future in the field of organic electronics and their potential applications, e.g., photovoltaic cells. - Highlights: • Development of a new organic acetaminophen/Curcumin semiconductor material. • The developed material has characteristics of an organic semiconductor. • It has electrical conductivity comparable to available organic semiconductors. • It has high optical transmittance and low permittivity/dielectric constant.

  14. Synthesis and characterization of a new organic semiconductor material

    International Nuclear Information System (INIS)

    Tiffour, Imane; Dehbi, Abdelkader; Mourad, Abdel-Hamid I.; Belfedal, Abdelkader

    2016-01-01

    The objective of this study is to create an ideal mixture of Acetaminophen/Curcumin leading to a new and improved semiconductor material, by a study of the electrical, thermal and optical properties. This new material will be compared with existing semiconductor technology to discuss its viability within the industry. The electrical properties were investigated using complex impedance spectroscopy and optical properties were studied by means of UV-Vis spectrophotometry. The electric conductivity σ, the dielectric constant ε_r, the activation energy E_a, the optical transmittance T and the gap energy E_g have been investigated in order to characterize our organic material. The electrical conductivity of the material is approximately 10"−"5 S/m at room temperature, increasing the temperature causes σ to increase exponentially to approximately 10"−"4 S/m. The activation energy obtained for the material is equal to 0.49 ± 0.02 ev. The optical absorption spectra show that the investigating material has absorbance in the visible range with a maximum wavelength (λ_m_a_x) 424 nm. From analysis, the absorption spectra it was found the optical band gap equal to 2.6 ± 0.02 eV and 2.46 ± 0.02 eV for the direct and indirect transition, respectively. In general, the study shows that the developed material has characteristics of organic semiconductor material that has a promising future in the field of organic electronics and their potential applications, e.g., photovoltaic cells. - Highlights: • Development of a new organic acetaminophen/Curcumin semiconductor material. • The developed material has characteristics of an organic semiconductor. • It has electrical conductivity comparable to available organic semiconductors. • It has high optical transmittance and low permittivity/dielectric constant.

  15. Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

    Science.gov (United States)

    Papatryfonos, Konstantinos; Saladukha, Dzianis; Merghem, Kamel; Joshi, Siddharth; Lelarge, Francois; Bouchoule, Sophie; Kazazis, Dimitrios; Guilet, Stephane; Le Gratiet, Luc; Ochalski, Tomasz J.; Huyet, Guillaume; Martinez, Anthony; Ramdane, Abderrahim

    2017-02-01

    Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ˜ 40 cm-1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers.

  16. Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

    Science.gov (United States)

    Frez, Clifford F.; Soibel, Alexander; Belenky, Gregory; Shterengas, Leon; Kipshidze, Gela

    2010-01-01

    Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

  17. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  18. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1992-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups: Classical semiconductor diode detectors and semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported

  19. Semiconductor detectors in nuclear and particle physics

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1995-01-01

    Semiconductor detectors for elementary particle physics and nuclear physics in the energy range above 1 GeV are briefly reviewed. In these two fields semiconductor detectors are used mainly for the precise position sensing. In a typical experiment, the position of a fast charged particle crossing a relatively thin semiconductor detector is measured. The position resolution achievable by semiconductor detectors is compared with the resolution achievable by gas filled position sensing detectors. Semiconductor detectors are divided into two groups; (i) classical semiconductor diode detectors and (ii) semiconductor memory detectors. Principles of the signal formation and the signal read-out for both groups of detectors are described. New developments of silicon detectors of both groups are reported. copyright 1995 American Institute of Physics

  20. Triplet exciton diffusion in organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Koehler, Anna [Department of Physics, University of Bayreuth (Germany)

    2010-07-01

    Efficient triplet exciton emission has allowed improved operation of organic light-emitting diodes (LEDs). To enhance the device performance, it is necessary to understand what governs the motion of triplet excitons through the organic semiconductor. We use a series of poly(p-phenylene)-type conjugated polymers and oligomers of variable degree of molecular distortion (i.e. polaron formation) and energetic disorder as model systems to study the Dexter-type triplet exciton diffusion in thin films. We show that triplet diffusion can be quantitatively described in the framework of a Holstein small polaron model (Marcus theory) that is extended to include contributions from energetic disorder. The model predicts a tunnelling process at low temperatures followed by a thermally activated hopping process above a transition temperature. In contrast to charge transfer, the activation energy required for triplet exciton transfer can be deduced from the optical spectra. We discuss the implications for device architecture.