Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2016-01-01

: off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

Profiling of barrier capacitance and spreading resistance using a transient linearly increasing voltage technique.

Science.gov (United States)

Gaubas, E; Ceponis, T; Kusakovskij, J

2011-08-01

A technique for the combined measurement of barrier capacitance and spreading resistance profiles using a linearly increasing voltage pulse is presented. The technique is based on the measurement and analysis of current transients, due to the barrier and diffusion capacitance, and the spreading resistance, between a needle probe and sample. To control the impact of deep traps in the barrier capacitance, a steady state bias illumination with infrared light was employed. Measurements of the spreading resistance and barrier capacitance profiles using a stepwise positioned probe on cross sectioned silicon pin diodes and pnp structures are presented.

Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers.

Science.gov (United States)

Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

2016-12-30

In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/ Hz at 50 kHz, which corresponds to 100 μg/ Hz .

Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers

Directory of Open Access Journals (Sweden)

Guillermo Royo

2016-12-01

Full Text Available In this work, we present a capacitance-to-voltage converter (CVC for capacitive accelerometers based on microelectromechanical systems (MEMS. Based on a fully-differential transimpedance amplifier (TIA, it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/ Hz at 50 kHz, which corresponds to 100 μg/ Hz .

Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

International Nuclear Information System (INIS)

Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

2002-01-01

This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

Transparent Flexible Active Faraday Cage Enables In Vivo Capacitance Measurement in Assembled Microsensor.

Science.gov (United States)

Ahmadi, Mahdi; Rajamani, Rajesh; Sezen, Serdar

2017-10-01

Capacitive micro-sensors such as accelerometers, gyroscopes and pressure sensors are increasingly used in the modern electronic world. However, the in vivo use of capacitive sensing for measurement of pressure or other variables inside a human body suffers from significant errors due to stray capacitance. This paper proposes a solution consisting of a transparent thin flexible Faraday cage that surrounds the sensor. By supplying the active sensing voltage simultaneously to the deformable electrode of the capacitive sensor and to the Faraday cage, the stray capacitance during in vivo measurements can be largely eliminated. Due to the transparency of the Faraday cage, the top and bottom portions of a capacitive sensor can be accurately aligned and assembled together. Experimental results presented in the paper show that stray capacitance is reduced by a factor of 10 by the Faraday cage, when the sensor is subjected to a full immersion in water.

Digital Control of a High Voltage (2.5 kV) Bidirectional Flyback DC-DC Converter for Driving a Capacitive Incremental Actuator

DEFF Research Database (Denmark)

Thummala, Prasanth; Maksimovic, Dragan; Zhang, Zhe

2016-01-01

This paper presents a digital control technique to achieve valley switching in a bidirectional flyback converter used to drive a dielectric electro-active polymer based capacitive incremental actuator. The paper also provides the design of a low input voltage (24 V) and variable high output voltage...... on the output high-voltage (HV) side. Experimental results verifying the bidirectional operation of a high voltage flyback converter are presented, using a 3 kV polypropylene film capacitor as the load. The energy loss distributions of the converter when 4 kV and 4.5 kV HV MOSFETs are used on HV side...

Isolating the effect of pore size distribution on electrochemical double-layer capacitance using activated fluid coke

Science.gov (United States)

Zuliani, Jocelyn E.; Tong, Shitang; Kirk, Donald W.; Jia, Charles Q.

2015-12-01

Electrochemical double-layer capacitors (EDLCs) use physical ion adsorption in the capacitive electrical double layer of high specific surface area (SSA) materials to store electrical energy. Previous work shows that the SSA-normalized capacitance increases when pore diameters are less than 1 nm. However, there still remains uncertainty about the charge storage mechanism since the enhanced SSA-normalized capacitance is not observed in all microporous materials. In previous studies, the total specific surface area and the chemical composition of the electrode materials were not controlled. The current work is the first reported study that systematically compares the performance of activated carbon prepared from the same raw material, with similar chemical composition and specific surface area, but different pore size distributions. Preparing samples with similar SSAs, but different pores sizes is not straightforward since increasing pore diameters results in decreasing the SSA. This study observes that the microporous activated carbon has a higher SSA-normalized capacitance, 14.1 μF cm-2, compared to the mesoporous material, 12.4 μF cm-2. However, this enhanced SSA-normalized capacitance is only observed above a threshold operating voltage. Therefore, it can be concluded that a minimum applied voltage is required to induce ion adsorption in these sub-nanometer micropores, which increases the capacitance.

Charge Gain, Voltage Gain, and Node Capacitance of the SAPHIRA Detector Pixel by Pixel

Science.gov (United States)

Pastrana, Izabella M.; Hall, Donald N. B.; Baker, Ian M.; Jacobson, Shane M.; Goebel, Sean B.

2018-01-01

The University of Hawai`i Institute for Astronomy has partnered with Leonardo (formerly Selex) in the development of HgCdTe linear mode avalanche photodiode (L-APD) SAPHIRA detectors. The SAPHIRA (Selex Avalanche Photodiode High-speed Infra-Red Array) is ideally suited for photon-starved astronomical observations, particularly near infrared (NIR) adaptive optics (AO) wave-front sensing. I have measured the stability, and linearity with current, of a 1.7-um (10% spectral bandpass) infrared light emitting diode (IR LED) used to illuminate the SAPHIRA and have then utilized this source to determine the charge gain (in e-/ADU), voltage gain (in uV/ADU), and node capacitance (in fF) for each pixel of the 320x256@24um SAPHIRA. These have previously only been averages over some sub-array. Determined from the ratio of the temporal averaged signal level to variance under constant 1.7-um LED illumination, I present the charge gain pixel-by-pixel in a 64x64 sub-array at the center of the active area of the SAPHIRA (analyzed separately as four 32x32 sub-arrays) to be about 1.6 e-/ADU (σ=0.5 e-/ADU). Additionally, the standard technique of varying the pixel reset voltage (PRV) in 10 mV increments and recording output frames for the same 64x64 subarray found the voltage gain per pixel to be about 11.7 uV/ADU (σ=0.2 uV/ADU). Finally, node capacitance was found to be approximately 23 fF (σ=6 fF) utilizing the aforementioned charge and voltage gain measurements. I further discuss the linearity measurements of the 1.7-um LED used in the charge gain characterization procedure.

A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

Science.gov (United States)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

2018-04-01

In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

Capacitance-voltage characterization of fully silicided gated MOS capacitor

International Nuclear Information System (INIS)

Wang Baomin; Ru Guoping; Jiang Yulong; Qu Xinping; Li Bingzong; Liu Ran

2009-01-01

This paper investigates the capacitance-voltage (C-V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C-V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C-V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C-V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C-V measurement and the photonic high-frequency C-V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C-V measurement. On the other hand, the photonic high-frequency C-V measurement can bypass the leakage problem, and get reliable low-frequency C-V characteristic, which can be used to

Photonic characterization of capacitance-voltage characteristics in MOS capacitors and current-voltage characteristics in MOSFETs

International Nuclear Information System (INIS)

Kim, H. C.; Kim, H. T.; Cho, S. D.; Song, S. J.; Kim, Y. C.; Kim, S. K.; Chi, S. S.; Kim, D. J.; Kim, D. M.

2002-01-01

Based on the photonic high-frequency capacitance-voltage (HF-CV) response of MOS capacitors, a new characterization method is reported for the analysis of interface states in MOS systems. An optical source with a photonic energy less than the silicon band-gap energy (hv g ) is employed for the photonic HF-CV characterization of interface states distributed in the photoresponsive energy band (E C - hv t C ). If a uniform distribution of trap levels is assumed, the density of interface states (D it ) in the photoresponsive energy band of MOS capacitors, characterized by the new photonic HF-CV method, was observed to be D it = 1 ∼ 5 x 10 11 eV -1 cm -2 . Photonic current-voltage characteristics (I D - V GS , V DS ) of MOSFETs, which are under control of the photoconductive and the photovoltaic effects, are also investigated under optical illumination

Capacitance and voltage matching between MnO2 nanoflake cathode and Fe2O3 nanoparticle anode for high-performance asymmetric micro-supercapacitors

Institute of Scientific and Technical Information of China (English)

Zehua Liu; Xiaocong Tian; Xu Xu; Liang He; Mengyu Yan; Chunhua Han; Yan Li; Wei Yang; Liqiang Mai

2017-01-01

Planar micro-supercapacitors show great potential as the energy storage unit in miniaturized electronic devices.Asymmetric structures have been widely investigated in micro-supercapacitors,and carbon-based materials are commonly applied in the electrodes.To integrate different metal oxides in both electrodes in micro-supercapacitors,the critical challenge is the pairing of different faradic metal oxides.Herein,we propose a strategy of matching the voltage and capacitance of two faradic materials that are fully integrated into one high-performance asymmetric micro-supercapadtor by a fadle and controllable fabrication process.The fabricated micro-supercapacitors employ MnO2 as the positive active material and Fe2O3 as the negative active material,respectively.The planar asymmetric micro-supercapacitors possess a high capacitance of 60 F·cm-3,a high energy density of 12 mW·h·cm-3,and a broad operation voltage range up to 1.2 V.

Verification of high voltage rf capacitive sheath models with particle-in-cell simulations

Science.gov (United States)

Wang, Ying; Lieberman, Michael; Verboncoeur, John

2009-10-01

Collisionless and collisional high voltage rf capacitive sheath models were developed in the late 1980's [1]. Given the external parameters of a single-frequency capacitively coupled discharge, plasma parameters including sheath width, electron and ion temperature, plasma density, power, and ion bombarding energy can be estimated. One-dimensional electrostatic PIC codes XPDP1 [2] and OOPD1 [3] are used to investigate plasma behaviors within rf sheaths and bulk plasma. Electron-neutral collisions only are considered for collisionless sheaths, while ion-neutral collisions are taken into account for collisional sheaths. The collisionless sheath model is verified very well by PIC simulations for the rf current-driven and voltage-driven cases. Results will be reported for collisional sheaths also. [1] M. A. Lieberman, IEEE Trans. Plasma Sci. 16 (1988) 638; 17 (1989) 338 [2] J. P. Verboncoeur, M. V. Alves, V. Vahedi, and C. K. Birdsall, J. Comp. Phys. 104 (1993) 321 [3] J. P. Verboncoeur, A. B. Langdon and N. T. Gladd, Comp. Phys. Comm. 87 (1995) 199

Capacitance-voltage investigation of silicon photodiodes damaged by MeV energy light ions

International Nuclear Information System (INIS)

Kalinka, G.; Simon, A.; Novak, M.; Kiss, A.Z.

2006-01-01

Complete text of publication follows. Nuclear radiation creates not only deep centers, but in addition influences shallow dopant concentration in semiconductors, as well. At a given temperature the maximum frequency a center can respond to depends on its energy level, therefore the capacitance-voltage (C-V) characteristics of radiation damaged semiconductor diodes should ideally be measured as function of frequency in order to obtain the physical and energy depth distribution of ionized centers [1,2]. In our experiments C-V plots of MeV energy ion irradiated photodiodes were taken at fixed 1 kHz frequency, which is low enough to be sensitive at room temperature to some of the deep levels expected. During, for example, an irradiation with 5.5 MeV α particles the capacitance of a p + nn + diode increased significantly at low voltages, but showed rather small changes at higher ones. The former turned out to be merely related to a decrease of the built in voltage, corresponding to a lifetime to relaxation type transition of the semiconductor [3]. Rescaling C-V data for this change, the remaining, actual capacitance changes could be interpreted as related to nuclear recoil caused damage located around the end of particle tracks. C-V technique has also been used for follow up investigation of spontaneous self annealing at room temperature of irradiated samples. This is shown here by plotting capacitance data normalized to their virgin values as function of depletion depth for irradiation with 430 keV protons, whose range is about 5 μm. The sensitivity of the method is illustrated for low fluence of 6.5 MeV oxygen, whose range is 5 μm, too, and where the normalization is now made to data taken one week after the irradiation. Acknowledgement This work was supported by the Hungarian Research and Technology Innovation Fund and the Croatian Ministry of Science, Education and Sports within the framework of the Hungarian-Croatian Intergovernmental Science and Technology Co

Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material

International Nuclear Information System (INIS)

Lee, Hye-Ryoung; Choi, Samjong; Cho, Kyoungah; Kim, Sangsig

2007-01-01

Capacitance versus voltage (C-V) curves of Ge-nanocrystals (NCs)-embedded metal-oxide-semiconductor (MOS) capacitors are characterized in this work. Ge NCs were formed in 20-nm thick ZrO 2 gate layers by ion implantation and subsequent annealing procedures. The formation of the Ge NCs in the ZrO 2 gate layers was confirmed by high-resolution transmission electron microscopy and energy dispersive spectroscopy. The C-V curves obtained from a representative MOS capacitor embedded with the Ge NCs exhibit a 3 V memory window as bias voltage varied from 9 to - 9 V and then back to the initial positive voltage, whereas MOS capacitors without Ge NCs show negligible memory windows at the same voltage range. This indicates the presence of charge storages in the Ge NCs. The counterclockwise hysteresis observed from the C-V curves implies that electrons are trapped in Ge NCs presented inside the ZrO 2 gate layer. And our experimental results obtained from capacitance versus time measurements show good retention characteristics of Ge-NCs-embedded MOS capacitors with ZrO 2 gate material for the application of NFGM

Contrast distortion induced by modulation voltage in scanning capacitance microscopy

Science.gov (United States)

Chang, M. N.; Hu, C. W.; Chou, T. H.; Lee, Y. J.

2012-08-01

With a dark-mode scanning capacitance microscopy (SCM), we directly observed the influence of SCM modulation voltage (MV) on image contrasts. For electrical junctions, an extensive modulated area induced by MV may lead to noticeable changes in the SCM signal phase and intensity, resulting in a narrowed junction image and a broadened carrier concentration profile. This contrast distortion in SCM images may occur even if the peak-to-peak MV is down to 0.3 V. In addition, MV may shift the measured electrical junction depth. The balance of SCM signals components explain these MV-induced contrast distortions.

Capacitance-voltage characteristics of quantum well structures

CERN Document Server

Moon, C R; Choe, B D

1999-01-01

The characteristics of the apparent carrier distribution (ACD) of quantum well (QW) structures are investigated using the self-consistent simulation and the capacitance-voltage (C-V) profiling techniques. The simulation results on the differential carrier distribution show that the change of position expectation value of two-dimensional electrons determines the full width at half maximum of 100 K ACD peaks when conduction band offset is DELTA E sub c = 160 meV and the QW width t sub w is greater than 120 A. The contribution of Debye averaging effects to the ACD peaks becomes important as t sub w and DELTA E sub c values decrease and the temperature is increased. The influence of Debye averaging effects on ACD peaks appears differently according to the location of each well in multiple QWs. These results indicate that the extraction of QW parameters from the C-V profile should be done with caution.

Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise

International Nuclear Information System (INIS)

Gokirmak, Ali; Inaltekin, Hazer; Tiwari, Sandip

2009-01-01

A high resolution capacitance-voltage (C-V) characterization technique, enabling direct measurement of electronic properties at the nanoscale in devices such as nanowire field effect transistors (FETs) through the use of random fluctuations, is described. The minimum noise level required for achieving sub-aF (10 -18 F) resolution, the leveraging of stochastic resonance, and the effect of higher levels of noise are illustrated through simulations. The non-linear ΔC gate-source/drain -V gate response of FETs is utilized to determine the inversion layer capacitance (C inv ) and carrier mobility. The technique is demonstrated by extracting the carrier concentration and effective electron mobility in a nanoscale Si FET with C inv = 60 aF.

Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

Science.gov (United States)

Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

2018-02-01

Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene

KAUST Repository

Wondmagegn, Wudyalew T.; Satyala, Nikhil T.; Mejia, Israel I.; Mao, Duo; Gowrisanker, Srinivas; Alshareef, Husam N.; Stiegler, Harvey J.; Quevedo-Ló pez, Manuel Angel Quevedo; Pieper, Ron J.; Gnade, Bruce E.

2011-01-01

The capacitance-voltage (C-V) characteristics of metal-insulator- semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numerical

Determination of charge transfer resistance and capacitance of microbial fuel cell through a transient response analysis of cell voltage.

Science.gov (United States)

Ha, Phuc Thi; Moon, Hyunsoo; Kim, Byung Hong; Ng, How Yong; Chang, In Seop

2010-03-15

An alternative method for determining the charge transfer resistance and double-layer capacitance of microbial fuel cells (MFCs), easily implemented without a potentiostat, was developed. A dynamic model with two parameters, the charge transfer resistance and double-layer capacitance of electrodes, was derived from a linear differential equation to depict the current generation with respect to activation overvoltage. This model was then used to fit the transient cell voltage response to the current step change during the continuous operation of a flat-plate type MFC fed with acetate. Variations of the charge transfer resistance and the capacitance value with respect to the MFC design conditions (biocatalyst existence and electrode area) and operating parameters (acetate concentration and buffer strength in the catholyte) were then determined to elucidate the validity of the proposed method. This model was able to describe the dynamic behavior of the MFC during current change in the activation loss region; having an R(2) value of over 0.99 in most tests. Variations of the charge transfer resistance value (thousands of Omega) according to the change of the design factors and operational factors were well-correlated with the corresponding MFC performances. However, though the capacitance values (approximately 0.02 F) reflected the expected trend according to the electrode area change and catalyst property, they did not show significant variation with changes in either the acetate concentration or buffer strength. (c) 2009 Elsevier B.V. All rights reserved.

The changes of capacitance-loss and current-voltage characteristics of LaMnO3+δ/SrTiO3:Nb heterojunctions exposed to ambient air

International Nuclear Information System (INIS)

Cui Yimin; Wang Rongming

2010-01-01

Effects of moisture absorption on capacitance-loss and current-voltage characteristics of LaMnO 3+δ /SrTiO 3 :Nb heterojunction had been investigated after the heterojunctions were exposed to ambient air. The moisture-absorption-induced increases in loss tangent and breakdown voltage were observed, whereas no changes were found on capacitance and diffusion voltage. These results were discussed by the decrease of oxygen ions in LaMnO 3+δ and the generation of hydroxide ions at grain boundaries. This work will favor both electronic transport analysis and future device applications.

Illumination and Voltage Dependence of Electrical Characteristics of Au/0.03 Graphene-Doped PVA/n-Si Structures via Capacitance/Conductance-Voltage Measurements

International Nuclear Information System (INIS)

Sahar, Alialy; Şlemsettin, Altındal; Ahmet, Kaya; İ, Uslu

2015-01-01

Au/n-Si (MS) structures with a high dielectric interlayer (0.03 graphene-doped PVA) are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms (N D ), barrier height (ϕ B (C - V)), depletion layer width (W D ) and series resistance (R s ) show fairly large illumination dispersion. The voltage-dependent profile of surface states (N ss ) and resistance of the structure (R i ) are also obtained by using the dark-illumination capacitance (C dark -C ill ) and Nicollian-Brews methods, respectively. For a clear observation of changes in electrical parameters with illumination, the values of N D , W D , ϕ B (C - V) and R s are drawn as a function of illumination intensity. The values of N D and W D change almost linearly with illumination intensity. On the other hand, R s decreases almost exponentially with increasing illumination intensity whereas ϕ B (C - V) increases. The experimental results suggest that the use of a high dielectric interlayer (0.03 graphene-doped PVA) considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications. (paper)

Combined resonant tank capacitance and pulse frequency modulation control for ZCS-SR inverter-fed high voltage DC power supply

International Nuclear Information System (INIS)

Lee, S S; Iqbal, S; Kamarol, M

2011-01-01

Conventional pulse frequency modulated (PFM) zero current switching (ZCS) series resonant (SR) inverter fed high voltage dc power supplies have nearly zero switching loss. However, they have limitations of poor controllability at light loads and large output voltage ripple at low switching frequencies. To address these problems, this paper proposes a combined resonant tank capacitance and pulse frequency modulation based control approach. For the realization of the proposed control approach, the tank circuit of the resonant inverter is made up of several resonant capacitors that are switched into or out of the tank circuit by electromechanical switches. The output voltage of the converter is regulated by digitally modulating the resonant tank capacitance and narrowly varying the switching frequency. The proposed control scheme has several features, namely a wide range of controllability even at light loads, less output voltage ripple, and less current stress on the inverter's power switches at light loads. Therefore, the proposed control approach alleviates most of the problems associated with conventional PFM. Experimental results obtained from a scaled down laboratory prototype are presented to verify the effectiveness of the proposed system.

Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene

KAUST Repository

Wondmagegn, Wudyalew T.

2011-04-01

The capacitance-voltage (C-V) characteristics of metal-insulator- semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numerical analysis. The device simulation was performed using two-dimensional drift-diffusion methods taking into account the Poole-Frenkel field-dependent mobility. Pentacene bulk defect states and fixed charge density at the semiconductor/insulator interface were incorporated into the simulation. The analysis examined pentacene/parylene interface characteristics for various parylene thicknesses. For each thickness, the corresponding flat band voltage extracted from the C-V plot of the MIS structure was more negative than - 2.4 V. From the flat band voltage the existence of a significant mismatch between the work functions of the gate electrode and pentacene active material has been identified. Experimental and simulation results suggest the existence of interface charge density on the order of 3 × 1011 q/cm2 at the insulator/semiconductor interface. The frequency dispersion characteristics of the device are also presented and discussed. © 2011 Elsevier B.V.

MOS Capacitance—Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities

International Nuclear Information System (INIS)

Jie Binbin; Sah Chihtang

2011-01-01

Low-frequency and high-frequency capacitance—voltage curves of Metal—Oxide—Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications. (invited papers)

Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

Science.gov (United States)

Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

2017-10-01

A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

Transient voltage oscillations in coils

International Nuclear Information System (INIS)

Chowdhuri, P.

1985-01-01

Magnet coils may be excited into internal voltage oscillations by transient voltages. Such oscillations may electrically stress the magnet's dielectric components to many times its normal stress. This may precipitate a dielectric failure, and the attendant prolonged loss of service and costly repair work. Therefore, it is important to know the natural frequencies of oscillations of a magnet during the design stage, and to determine whether the expected switching transient voltages can excite the magnet into high-voltage internal oscillations. The series capacitance of a winding significantly affects its natural frequencies. However, the series capacitance is difficult to calculate, because it may comprise complex capacitance network, consisting of intra- and inter-coil turn-to-turn capacitances of the coil sections. A method of calculating the series capacitance of a winding is proposed. This method is rigorous but simple to execute. The time-varying transient voltages along the winding are also calculated

Capacitance estimation algorithm based on DC-link voltage harmonics using artificial neural network in three-phase motor drive systems

DEFF Research Database (Denmark)

Soliman, Hammam Abdelaal Hammam; Davari, Pooya; Wang, Huai

2017-01-01

to industry. In this digest, a condition monitoring methodology that estimates the capacitance value of the dc-link capacitor in a three phase Front-End diode bridge motor drive is proposed. The proposed software methodology is based on Artificial Neural Network (ANN) algorithm. The harmonics of the dc......-link voltage are used as training data to the Artificial Neural Network. Fast Fourier Transform (FFT) of the dc-link voltage is analysed in order to study the impact of capacitance variation on the harmonics order. Laboratory experiments are conducted to validate the proposed methodology and the error analysis......In modern design of power electronic converters, reliability of dc-link capacitors is one of the critical considered aspects. The industrial field have been attracted to the monitoring of their health condition and the estimation of their ageing process status. However, the existing condition...

Capacitively coupled radio-frequency plasmas excited by tailored voltage waveforms

International Nuclear Information System (INIS)

Lafleur, T; Delattre, P A; Booth, J P; Johnson, E V

2013-01-01

By applying certain types of ‘tailored’ voltage waveforms (TVWs) to capacitively coupled plasmas, a dc self-bias and an asymmetric plasma response can be produced, even in geometrically symmetric reactors. Furthermore, these arbitrary applied waveforms can produce a number of interesting phenomena that are not present in typical single-frequency sinusoidal discharges. This electrical asymmetry effect presents emerging possibilities for the improved control of the ion energy and ion flux in these systems; parameters of vital importance to both etching and deposition applications for materials processing. With a combined research approach utilizing both experimental measurements, and particle-in-cell simulations, we review and extend recent investigations that study a particular class of TVW. The waveforms used have a pulse-type shape and are composed of a varying number of harmonic frequencies. This allows a strong self-bias to be produced, and causes most of the applied voltage to be dropped across a single sheath. Additionally, decreasing the pulse width (by increasing the number of harmonics), allows the plasma density and ion flux to be increased. Simulation and experimental results both demonstrate that this type of waveform can be used to separately control the ion flux and ion energy, while still producing a uniform plasma over large area (50 cm diameter) rf electrodes. (paper)

Electrically tunable sign of capacitance in planar W-doped vanadium dioxide micro-switches

Directory of Open Access Journals (Sweden)

Mohammed Soltani, Mohamed Chaker and Joelle Margot

2011-01-01

Full Text Available Negative capacitance (NC in a planar W-doped VO2 micro-switch was observed at room temperature in the low-frequency range 1 kHz–10 MHz. The capacitance changed from positive to negative values as the W-doped VO2 active layer switched from semiconducting to metallic state under applied voltage. In addition, a capacitance–voltage hysteresis was observed as the applied voltage was cycled from −35 to 35 V. These observations suggest that NC results from the increase of the electrically induced conductivity in the active layer. This NC phenomenon could be exploited in advanced multifunctional devices including ultrafast switches, field-effect transistors and memcapacitive systems.

Capacitive Sensing of Glucose in Electrolytes Using Graphene Quantum Capacitance Varactors.

Science.gov (United States)

Zhang, Yao; Ma, Rui; Zhen, Xue V; Kudva, Yogish C; Bühlmann, Philippe; Koester, Steven J

2017-11-08

A novel graphene-based variable capacitor (varactor) that senses glucose based on the quantum capacitance effect was successfully developed. The sensor utilizes a metal-oxide-graphene varactor device structure that is inherently compatible with passive wireless sensing, a key advantage for in vivo glucose sensing. The graphene varactors were functionalized with pyrene-1-boronic acid (PBA) by self-assembly driven by π-π interactions. Successful surface functionalization was confirmed by both Raman spectroscopy and capacitance-voltage characterization of the devices. Through glucose binding to the PBA, the glucose concentration in the buffer solutions modulates the level of electrostatic doping of the graphene surface to different degrees, which leads to capacitance changes and Dirac voltage shifts. These responses to the glucose concentration were shown to be reproducible and reversible over multiple measurement cycles, suggesting promise for eventual use in wireless glucose monitoring.

Investigation of capacitance voltage characteristics of strained Si/SiGe n-channel MODFET varactor

Science.gov (United States)

Elogail, Y.; Kasper, E.; Gunzer, F.; Shaker, A.; Schulze, J.

2016-06-01

This work is concerned with the investigation of Capacitance-Voltage (CV) behavior of n-channel Si/SiGe MODFET varactors. This investigation provides a valuable insight into the high frequency response of the device under test and its dependence on design parameters; especially regarding the modulation layer doping concentration. The heterostructure under consideration is much more complicated than conventional MOS varactor with respect to non-uniform doping, energy band offsets and the pn-junction in series. Subsequently, CV characterization has never been applied to such MODFET varactor structure. Experimental CV measurements have shown a non-monotonic behavior with a transition point minimum and higher saturation levels on both sides, in contradiction to the conventional high frequency MOS characteristics. This behavior was confirmed qualitatively using simulations. Moreover, we explain some fundamental capacitance properties of the structure, which provide already very interesting perceptions of the MODFET varactor operation, modeling and possible applications using the obtained stimulating results.

Negative capacitance in a ferroelectric capacitor.

Science.gov (United States)

Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

2015-02-01

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

Characterization of active CMOS sensors for capacitively coupled pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

2015-07-01

Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

A new interface weak-capacitance detection ASIC of capacitive liquid level sensor in the rocket

Science.gov (United States)

Yin, Liang; Qin, Yao; Liu, Xiao-Wei

2017-11-01

A new capacitive liquid level sensing interface weak-capacitance detection ASIC has been designed. This ASIC realized the detection of the output capacitance of the capacitive liquid level sensor, which converts the output capacitance of the capacitive liquid level sensor to voltage. The chip is fabricated in a standard 0.5μm CMOS process. The test results show that the linearity of capacitance detection of the ASIC is 0.05%, output noise is 3.7aF/Hz (when the capacitance which will be detected is 40 pF), the stability of capacitance detection is 7.4 × 10-5pF (1σ, 1h), the output zero position temperature coefficient is 4.5 uV/∘C. The test results prove that this interface ASIC can meet the requirement of high accuracy capacitance detection. Therefore, this interface ASIC can be applied in capacitive liquid level sensing and capacitive humidity sensing field.

Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations

Science.gov (United States)

Zeng, Ke; Singisetti, Uttam

2017-09-01

The interface trap density (Dit) of the SiO2/β-Ga2O3 interface in ( 2 ¯ 01), (010), and (001) orientations is obtained by the Hi-Lo method with the low frequency capacitance measured using the Quasi-Static Capacitance-Voltage (QSCV) technique. QSCV measurements are carried out at higher temperatures to increase the measured energy range of Dit in the bandgap. At room temperature, higher Dit is observed near the band edge for all three orientations. The measurement at higher temperatures led to an annealing effect that reduced the Dit value for all samples. Comparison with the conductance method and frequency dispersion of the capacitance suggests that the traps at the band edge are slow traps which respond to low frequency signals.

Asymmetric Electrodes Constructed with PAN-Based Activated Carbon Fiber in Capacitive Deionization

Directory of Open Access Journals (Sweden)

Mingzhe Li

2014-01-01

Full Text Available Capacitive deionization (CDI method has drawn much attention for its low energy consumption, low pollution, and convenient manipulation. Activated carbon fibers (ACFs possess high adsorption ability and can be used as CDI electrode material. Herein, two kinds of PAN-based ACFs with different specific surface area (SSA were used for the CDI electrodes. The CDI performance was investigated; especially asymmetric electrodes’ effect was evaluated. The results demonstrated that PAN-based ACFs showed a high electrosorption rate (complete electrosorption in less than half an hour and moderate electrosorption capacity (up to 0.2 mmol/g. CDI experiments with asymmetric electrodes displayed a variation in electrosorption capacity between forward voltage and reverse voltage. It can be attributed to the electrical double layer (EDL overlap effect and inner pore potential; thus the ions with smaller hydrated ionic radius can be adsorbed more easily.

A robust parasitic-insensitive successive approximation capacitance-to-digital converter

KAUST Repository

Omran, Hesham

2014-09-01

In this paper, we present a capacitive sensor digital interface circuit using true capacitance-domain successive approximation that is independent of supply voltage. Robust operation is achieved by using a charge amplifier stage and multiple comparison technique. The interface circuit is insensitive to parasitic capacitances, offset voltages, and charge injection, and is not prone to noise coupling. The proposed design achieves very low temperature sensitivity of 25ppm/oC. A coarse-fine programmable capacitance array allows digitizing a wide capacitance range of 16pF with 12.5-bit quantization limited resolution in a compact area of 0.07mm2. The fabricated prototype is experimentally verified using on-chip sensor and off-chip MEMS capacitive pressure sensor. © 2014 IEEE.

A robust parasitic-insensitive successive approximation capacitance-to-digital converter

KAUST Repository

Omran, Hesham; Arsalan, Muhammad; Salama, Khaled N.

2014-01-01

In this paper, we present a capacitive sensor digital interface circuit using true capacitance-domain successive approximation that is independent of supply voltage. Robust operation is achieved by using a charge amplifier stage and multiple comparison technique. The interface circuit is insensitive to parasitic capacitances, offset voltages, and charge injection, and is not prone to noise coupling. The proposed design achieves very low temperature sensitivity of 25ppm/oC. A coarse-fine programmable capacitance array allows digitizing a wide capacitance range of 16pF with 12.5-bit quantization limited resolution in a compact area of 0.07mm2. The fabricated prototype is experimentally verified using on-chip sensor and off-chip MEMS capacitive pressure sensor. © 2014 IEEE.

Current transport and capacitance-voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique

Science.gov (United States)

Nasr, Mahmoud; El Radaf, I. M.; Mansour, A. M.

2018-04-01

In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and scanning electron microscopy. The dark current-voltage characteristics of the heterojunction were investigated at different temperatures ranging from 298 to 398 K. The rectification factor, series resistance, shunt resistance, diode ideality factor, and effective barrier height (ϕb) were determined. The photovoltaic parameters were identified based on the current density-voltage characteristics under illumination. The capacitance-voltage characteristics showed that the junction was abrupt in nature.

Development of a versatile readout and test system and characterization of a capacitively coupled active pixel sensor

Energy Technology Data Exchange (ETDEWEB)

Janssen, Jens; Gonella, Laura; Hemperek, Tomasz; Hirono, Toko; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn, Bonn (Germany); Peric, Ivan [Karlsruher Institut fuer Technologie, Karlsruhe (Germany); Collaboration: ATLAS-Collaboration

2015-07-01

With the availability of high voltage and high resistivity CMOS processes, active pixel sensors are becoming increasingly interesting for radiation detection in high energy physics experiments. Although the pixel signal-to-noise ratio and the sensor radiation tolerance were improved, active pixel sensors cannot yet compete with state-of-the-art hybrid pixel detector in a high radiation environment. Hence, active pixel sensors are possible candidates for the outer tracking detector in HEP experiments where production cost plays a role. The investigation of numerous prototyping steps and different technologies is still ongoing and requires a versatile test and readout system, which will be presented in this talk. A capacitively coupled active pixel sensor fabricated in AMS 180 nm high voltage CMOS process is investigated. The sensor is designed to be glued to existing front-end pixel readout chips. Results from the characterization are presented in this talk.

On-site voltage measurement with capacitive sensors on high voltage systems

NARCIS (Netherlands)

Wu, L.; Wouters, P.A.A.F.; Heesch, van E.J.M.; Steennis, E.F.

2011-01-01

In Extra/High-Voltage (EHV/HV) power systems, over-voltages occur e.g. due to transients or resonances. At places where no conventional voltage measurement devices can be installed, on-site measurement of these occurrences requires preferably non intrusive sensors, which can be installed with little

Voltage equalization of an ultracapacitor module by cell grouping using number partitioning algorithm

Science.gov (United States)

Oyarbide, E.; Bernal, C.; Molina, P.; Jiménez, L. A.; Gálvez, R.; Martínez, A.

2016-01-01

Ultracapacitors are low voltage devices and therefore, for practical applications, they need to be used in modules of series-connected cells. Because of the inherent manufacturing tolerance of the capacitance parameter of each cell, and as the maximum voltage value cannot be exceeded, the module requires inter-cell voltage equalization. If the intended application suffers repeated fast charging/discharging cycles, active equalization circuits must be rated to full power, and thus the module becomes expensive. Previous work shows that a series connection of several sets of paralleled ultracapacitors minimizes the dispersion of equivalent capacitance values, and also the voltage differences between capacitors. Thus the overall life expectancy is improved. This paper proposes a method to distribute ultracapacitors with a number partitioning-based strategy to reduce the dispersion between equivalent submodule capacitances. Thereafter, the total amount of stored energy and/or the life expectancy of the device can be considerably improved.

On the Response of Interleaved Transformer Windings to Surge Voltages

DEFF Research Database (Denmark)

Pedersen, A.

1963-01-01

The high series capacitance theory for the response of interleaved transformer windings to surge voltages is criticized from the point of view that an increased series capacitance as a result of interleaving is incompatible with the concept of a pure capacitive initial voltage distribution. A new...

Finite-element simulations of coupling capacitances in capacitively coupled pixel detectors

CERN Document Server

AUTHOR|(SzGeCERN)755510

2017-01-01

Capacitively coupled hybrid silicon pixel-detector assemblies are under study for the vertex detector at the proposed future CLIC linear electron-positron collider. The assemblies consist of active CCPDv3 sensors, with 25 μm pixel pitch implemented in a 180 nm High- Voltage CMOS process, which are glued to the CLICpix readout ASIC, with the same pixel pitch and processed in a commercial 65 nm CMOS technology. The signal created in the silicon bulk of the active sensors passes a two-stage amplifier, in each pixel, and gets transferred as a voltage pulse to metal pads facing the readout chip (ROC). The coupling of the signal to the metal pads on the ROC side proceeds through the capacitors formed between the two chips by a thin layer of epoxy glue. The coupling strength and the amount of unwanted cross coupling to neighbouring pixels depends critically on the uniformity of the glue layer, its thickness and on the alignment precision during the flip-chip assembly process. Finite-element calculations of the coup...

Capacitance probe for detection of anomalies in non-metallic plastic pipe

Science.gov (United States)

Mathur, Mahendra P.; Spenik, James L.; Condon, Christopher M.; Anderson, Rodney; Driscoll, Daniel J.; Fincham, Jr., William L.; Monazam, Esmail R.

2010-11-23

The disclosure relates to analysis of materials using a capacitive sensor to detect anomalies through comparison of measured capacitances. The capacitive sensor is used in conjunction with a capacitance measurement device, a location device, and a processor in order to generate a capacitance versus location output which may be inspected for the detection and localization of anomalies within the material under test. The components may be carried as payload on an inspection vehicle which may traverse through a pipe interior, allowing evaluation of nonmetallic or plastic pipes when the piping exterior is not accessible. In an embodiment, supporting components are solid-state devices powered by a low voltage on-board power supply, providing for use in environments where voltage levels may be restricted.

Aging of electrochemical double layer capacitors with acetonitrile-based electrolyte at elevated voltages

International Nuclear Information System (INIS)

Ruch, P.W.; Cericola, D.; Foelske-Schmitz, A.; Koetz, R.; Wokaun, A.

2010-01-01

Laboratory-scale electrochemical capacitor cells with bound activated carbon electrodes and acetonitrile-based electrolyte were aged at various elevated constant cell voltages between 2.75 V and 4.0 V. During the constant voltage tests, the cell capacitance as well as the capacitance and resistance of each electrode was determined. Following each aging experiment, the cells were analyzed by means of electrochemical impedance spectroscopy, and the individual electrodes were characterized by gas adsorption and X-ray photoelectron spectroscopy. At cell voltages above 3.0 V, the positive electrode ages much faster than the negative. Both the capacitance loss and resistance increase of the cell could be totally attributed to the positive electrode. At cell voltages above 3.5 V also the negative electrode aged significantly. X-ray photoelectron spectroscopy indicated the presence of degradation products on the electrode surface with a much thicker layer on the positive electrode. Simultaneously, a significant decrease in electrode porosity could be detected by gas adsorption.

Bivariate quadratic method in quantifying the differential capacitance and energy capacity of supercapacitors under high current operation

Science.gov (United States)

Goh, Chin-Teng; Cruden, Andrew

2014-11-01

Capacitance and resistance are the fundamental electrical parameters used to evaluate the electrical characteristics of a supercapacitor, namely the dynamic voltage response, energy capacity, state of charge and health condition. In the British Standards EN62391 and EN62576, the constant capacitance method can be further improved with a differential capacitance that more accurately describes the dynamic voltage response of supercapacitors. This paper presents a novel bivariate quadratic based method to model the dynamic voltage response of supercapacitors under high current charge-discharge cycling, and to enable the derivation of the differential capacitance and energy capacity directly from terminal measurements, i.e. voltage and current, rather than from multiple pulsed-current or excitation signal tests across different bias levels. The estimation results the author achieves are in close agreement with experimental measurements, within a relative error of 0.2%, at various high current levels (25-200 A), more accurate than the constant capacitance method (4-7%). The archival value of this paper is the introduction of an improved quantification method for the electrical characteristics of supercapacitors, and the disclosure of the distinct properties of supercapacitors: the nonlinear capacitance-voltage characteristic, capacitance variation between charging and discharging, and distribution of energy capacity across the operating voltage window.

Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements

Energy Technology Data Exchange (ETDEWEB)

Rychetsky, Monir, E-mail: monir.rychetsky@physik.tu-berlin.de; Avinc, Baran; Wernicke, Tim; Bellmann, Konrad; Sulmoni, Luca [Institute of Solid State Physics, Technische Universität Berlin, Berlin (Germany); Koslow, Ingrid; Rass, Jens; Kneissl, Michael [Institute of Solid State Physics, Technische Universität Berlin, Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin (Germany); Hoffmann, Veit; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin (Germany); Wild, Johannes; Zweck, Josef [Fakultät für Physik, University of Regensburg, Regensburg (Germany); Witzigmann, Bernd [Computational Electronics and Photonics Group and CINSaT, University of Kassel, Kassel (Germany)

2016-03-07

The polarization fields in wurtzite group III-nitrides strongly influence the optical properties of InAlGaN-based light emitters, e.g., the electron and hole wave function overlap in quantum wells. In this paper, we propose a new approach to determine these fields by capacitance-voltage measurements (CVM). Sheet charges generated by a change of the microscopic polarization at heterointerfaces influence the charge distribution in PIN junctions and therefore the depletion width and the capacitance. We show that it is possible to determine the strength and direction of the internal fields by comparing the depletion widths of two PIN junctions, one influenced by internal polarization fields and one without as a reference. For comparison, we conducted coupled Poisson/carrier transport simulations on the CVM of the polarization-influenced sample. We also demonstrate the feasibility and limits of the method by determining the fields in GaN/InGaN and GaN/AlGaN double heterostructures on (0001) c-plane grown by metal organic vapor phase epitaxy and compare both evaluation methods. The method yields (−0.50 ± 0.07) MV/cm for In{sub 0.08}Ga{sub 0.92}N/GaN, (0.90 ± 0.13) MV/cm for Al{sub 0.18}Ga{sub 0.82}N/GaN, and (2.0 ± 0.3) MV/cm for Al{sub 0.31}Ga{sub 0.69}N/GaN heterostructures.

Ferroelectric Negative Capacitance Domain Dynamics

OpenAIRE

Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

2017-01-01

Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transien...

The capacitance of Pt/Pb0.65La0.28Ti0.96O3/Pt structures

International Nuclear Information System (INIS)

Shaw, T.M.; Laibowitz, R.B.; Beach, D.; Duncombe, P.R.

1996-01-01

The capacitance/voltage characteristics of thin paraelectric lead lanthanum titanate films are measured using platinum electrodes. The films have a maximum capacitance when either a small positive or negative bias voltage is applied. This characteristic is consistent with the electrode interfaces acting as Schottky-like barriers. The voltage at which the capacitance maxima occur increases linearly with film thickness indicating that the film is highly resistive. On the basis of the high apparent film resistance it is proposed that the voltage dependence of the capacitance of the electrode interfaces arises from the ionization of deep level traps within the film and not from depletion layers associated with shallow donor or acceptor states. Application of voltages larger than about 2 endash 3 V results in the disappearance of the capacitance maxima indicating that irreversible changes in the electrode interfaces occur at higher electric fields. copyright 1995 American Institute of Physics

Low voltage RF MEMS variable capacitor with linear C-V response

KAUST Repository

Elshurafa, Amro M.

2012-07-23

An RF MEMS variable capacitor, fabricated in the PolyMUMPS process and tuned electrostatically, possessing a linear capacitance-voltage response is reported. The measured quality factor of the device was 17 at 1GHz, while the tuning range was 1.2:1 and was achieved at an actuation DC voltage of 8V only. Further, the linear regression coefficient was 0.98. The variable capacitor was created such that it has both vertical and horizontal capacitances present. As the top suspended plate moves towards the bottom fixed plate, the vertical capacitance increases whereas the horizontal capacitance decreases simultaneously such that the sum of the two capacitances yields a linear capacitance-voltage relation. © 2012 The Institution of Engineering and Technology.

Development of an Intelligent Capacitive Mass Sensor Based on Co-axial Cylindrical Capacitor

Directory of Open Access Journals (Sweden)

Amir ABU AL AISH

2009-06-01

Full Text Available The paper presents a linear, robust and intelligent capacitive mass sensor made of a co-axial cylindrical capacitor. It is designed such that the mass under measurement is directly proportional to the capacitance of the sensor. The average value of the output voltage of a capacitance to voltage converter is proportional to the capacitance of the sensor. The output of the converter is measured and displayed, as mass, with the help of microcontroller. The results are free from the effect of stray capacitances which cause errors at low values of capacitances. Developed sensor is linear, free from errors due to temperature and highly flexible in design. The proto-type of the mass sensor can weigh up to 4 kilogram only.

Ferroelectric negative capacitance domain dynamics

Science.gov (United States)

Hoffmann, Michael; Khan, Asif Islam; Serrao, Claudy; Lu, Zhongyuan; Salahuddin, Sayeef; Pešić, Milan; Slesazeck, Stefan; Schroeder, Uwe; Mikolajick, Thomas

2018-05-01

Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are applied to a series connection of the ferroelectric capacitor and a resistor to directly measure the ferroelectric negative capacitance during switching. A time-dependent Ginzburg-Landau approach is used to investigate the underlying domain dynamics. The transient negative capacitance is shown to originate from reverse domain nucleation and unrestricted domain growth. However, with the onset of domain coalescence, the capacitance becomes positive again. The persistence of the negative capacitance state is therefore limited by the speed of domain wall motion. By changing the applied electric field, capacitor area or external resistance, this domain wall velocity can be varied predictably over several orders of magnitude. Additionally, detailed insights into the intrinsic material properties of the ferroelectric are obtainable through these measurements. A new method for reliable extraction of the average negative capacitance of the ferroelectric is presented. Furthermore, a simple analytical model is developed, which accurately describes the negative capacitance transient time as a function of the material properties and the experimental boundary conditions.

Important parameters affecting the cell voltage of aqueous electrical double-layer capacitors

Science.gov (United States)

Wu, Tzu-Ho; Hsu, Chun-Tsung; Hu, Chi-Chang; Hardwick, Laurence J.

2013-11-01

This study discusses and demonstrates how the open-circuit potential and charges stored in the working potential window on positive and negative electrodes affect the cell voltage of carbon-based electrical double-layer capacitors (EDLCs) in aqueous electrolytes. An EDLC consisting of two activated carbon electrodes is employed as the model system for identifying these key parameters although the potential window of water decomposition can be simply determined by voltammetric methods. First, the capacitive performances of an EDLC with the same charge on positive and negative electrodes are evaluated by cyclic voltammetric, charge-discharge, electrochemical impedance spectroscopic (EIS) analyses, and inductance-capacitance-resistance meter (LCR meter). The principles for obtaining the highest acceptable cell voltage of such symmetric ECs with excellent reversibility and capacitor-like behaviour are proposed. Aqueous charge-balanced EDLCs can be operated as high as 2.0 V with high energy efficiency (about 90%) and only 4% capacitance loss after the 600-cycle stability checking. The necessity of charge balance (but not capacitance balance) for positive and negative electrodes is substantiated from the lower acceptable cell voltage of charge-unbalanced EDLCs.

Research of grounding capacitive current of neutral non-grounding auxiliary system in nuclear power plants

International Nuclear Information System (INIS)

Yang Shan; Liu Li; Huang Xiaojing

2014-01-01

In the domestic and abroad standards, the grounding capacitive current limitation in the non-grounding electric auxiliary system is less than 10 A. Limiting capacitive current in the standard aims to speed up the arc extinguishing to reduce the duration of arc over-voltage, but not to prevent the arc producing, The arc over-voltage harm is related to the multiple, frequency and duration of the over-voltage. When the insulation vulnerabilities appear in the equipment, the arc over-voltage may result in insulation vulnerabilities of the electrical equipment breakdown, which leads to multiple, short-circuit accidents. The cable connector, accessory and electromotor winding are all insulation vulnerabilities. Setting the arc suppression coil which can counteract the grounding capacitive current makes the arc vanish quickly. Using the casting bus which remarkably reduces the ground capacitance of the electric transmission line makes the equipment safer. (authors)

An integrated energy-efficient capacitive sensor digital interface circuit

KAUST Repository

Omran, Hesham

2014-06-19

In this paper, we propose an energy-efficient 13-bit capacitive sensor interface circuit. The proposed design fully relies on successive approximation algorithm, which eliminates the need for oversampling and digital decimation filtering, and thus low-power consumption is achieved. The proposed architecture employs a charge amplifier stage to acheive parasitic insensitive operation and fine absolute resolution. Moreover, the output code is not affected by offset voltages or charge injection. The successive approximation algorithm is implemented in the capacitance-domain using a coarse-fine programmable capacitor array, which allows digitizing wide capacitance range in compact area. Analysis for the maximum achievable resolution due to mismatch is provided. The proposed design is insensitive to any reference voltage or current which translates to low temperature sensitivity. The operation of a prototype fabricated in a standard CMOS technology is experimentally verified using both on-chip and off-chip capacitive sensors. Compared to similar prior work, the fabricated prototype achieves and excellent energy efficiency of 34 pJ/step.

Effect of driving voltages in dual capacitively coupled radio frequency plasma: A study by nonlinear global model

International Nuclear Information System (INIS)

Bora, B.

2015-01-01

On the basis of nonlinear global model, a dual frequency capacitively coupled radio frequency plasma driven by 13.56 MHz and 27.12 MHz has been studied to investigate the influences of driving voltages on the generation of dc self-bias and plasma heating. Fluid equations for the ions inside the plasma sheath have been considered to determine the voltage-charge relations of the plasma sheath. Geometrically symmetric as well as asymmetric cases with finite geometrical asymmetry of 1.2 (ratio of electrodes area) have been considered to make the study more reasonable to experiment. The electrical asymmetry effect (EAE) and finite geometrical asymmetry is found to work differently in controlling the dc self-bias. The amount of EAE has been primarily controlled by the phase angle between the two consecutive harmonics waveforms. The incorporation of the finite geometrical asymmetry in the calculations shift the dc self-bias towards negative polarity direction while increasing the amount of EAE is found to increase the dc self-bias in either direction. For phase angle between the two waveforms ϕ = 0 and ϕ = π/2, the amount of EAE increases significantly with increasing the low frequency voltage, whereas no such increase in the amount of EAE is found with increasing high frequency voltage. In contrast to the geometrically symmetric case, where the variation of the dc self-bias with driving voltages for phase angle ϕ = 0 and π/2 are just opposite in polarity, the variation for the geometrically asymmetric case is different for ϕ = 0 and π/2. In asymmetric case, for ϕ = 0, the dc self-bias increases towards the negative direction with increasing both the low and high frequency voltages, but for the ϕ = π/2, the dc-self bias is increased towards positive direction with increasing low frequency voltage while dc self-bias increases towards negative direction with increasing high frequency voltage

Voltage Weak DC Distribution Grids

NARCIS (Netherlands)

Hailu, T.G.; Mackay, L.J.; Ramirez Elizondo, L.M.; Ferreira, J.A.

2017-01-01

This paper describes the behavior of voltage weak DC distribution systems. These systems have relatively small system capacitance. The size of system capacitance, which stores energy, has a considerable effect on the value of fault currents, control complexity, and system reliability. A number of

Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

Science.gov (United States)

Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho Kyun; You, Min Youl; Jin, Jun-Eon; Choi, Miri; Cho, Jiung; Kim, Gyu-Tae

2018-02-01

Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance-voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

A capacitive level shifter for high voltage (2.5kV)

DEFF Research Database (Denmark)

Andersen, Thomas; Andersen, Michael A. E.; Thomsen, Ole Cornelius

2012-01-01

with focus on low power consumption as well as low capacitive load between the floating half-bridge node and ground (output capacitance). The operation of the level-shifter is tested and verified by measurements on a prototype half-bridge gate driver. Results conclude stabile operation at 2.44kV, 50k...

Comparative study of microcontroller controlled four-wire voltage and current source shunt active power filters

Energy Technology Data Exchange (ETDEWEB)

Pettersson, S.

2009-07-01

During the past two decades, active power filters have increasingly grown their popularity as a viable method for improving electric power quality. The main reasons for this have been the advent of fast self-commutating solid-state devices, the progression of digital technology and the improved sensor technology. Four-wire active power filters provide an efficient solution for improving the quality of supply in grounded three-phase systems or three-phase systems with neutral conductors, which are commonly used for powering residential, office and public buildings. Four-wire active power filters are applicable in compensating current harmonics, reactive power, neutral current and load phase imbalance.This thesis presents a comparative study of microcontroller controlled four-wire voltage and current source shunt active power filters. The study includes two voltage source topologies and a current source topology with two different dc-link energy storage structures, which are compared on the basis of their filtering properties, filtering performance and efficiency. The obtained results are used for determining the suitability of current source technology for four-wire active power filtering and finding the most viable four-wire shunt active power filter topology. One commonly recognized disadvantage of the current source active power filter has always been the bulky dc-link inductor. To reduce the size of the dc-link inductor, an alternative dc-link structure for current source active power filters was introduced in the late 80's. The hybrid energy storage consists of both inductive and capacitive energy storage elements, two diodes and two controllable semiconductor switching devices. Since the capacitive element is used as a main storage unit, the inductance of the dc-link inductor can be considerably reduced. However, the original dc current control method proposed is not able to utilize the full potential of the hybrid energy storage and the inductance

In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al{sub 2}O{sub 3}/AlGaN/GaN stacks

Energy Technology Data Exchange (ETDEWEB)

Qin, Xiaoye; Lucero, Antonio; Azcatl, Angelica; Kim, Jiyoung; Wallace, Robert M. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2014-07-07

We investigate the Al{sub 2}O{sub 3}/AlGaN/GaN metal-oxide-semiconductor structure pretreated by O{sub 2} anneals, N{sub 2} remote plasma, and forming gas remote plasma prior to atomic layer deposition of Al{sub 2}O{sub 3} using in situ X-ray photoelectron spectroscopy, low energy electron diffraction, and capacitance- voltage measurements. Plasma pretreatments reduce the Ga-oxide/oxynitride formation and the interface state density, while inducing a threshold voltage instability.

High-voltage pulse generator for electron gun power supply

International Nuclear Information System (INIS)

Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

1987-01-01

High-voltage pulse generator with combined capacitive and inductive energy storages for electron gun power supply is described. Hydrogen thyratron set in a short magnetic lense is a current breaker. Times of current interruption in thyratrons are in the range from 100 to 300 ns. With 1 kV charging voltage of capacitive energy storage 25 kV voltage pulse is obtained in the load. The given high-voltage pulse generator was used for supply of an electron gun generating 10-30 keV low-energy electron beam

Experimental study of a variable-capacitance micromotor with electrostatic suspension

Science.gov (United States)

Han, F. T.; Wu, Q. P.; Wang, L.

2010-11-01

A variable-capacitance micromotor where the rotor is supported electrostatically in five degrees of freedom was designed, fabricated and tested in order to study the behavior of this electrostatic motor. The micromachined device is based on a glass/silicon/glass stack bonding structure, fabricated by bulk micromachining and initially operated in atmospheric environment. The analytical torque model is obtained by calculating the capacitances between different stator electrodes and the rotor. Capacitance values in the order of 10-13 pF and torque values in the order of 10-10 N m have been calculated from the motor geometry and attainable drive voltage. A dynamic model of the motor is proposed by further estimating the air-film damping effect in an effort to explain the experimental rotation measurements. Experimental results of starting voltage, continuous operation, switching response and electric bearing of the micromotor are presented and discussed. Preliminary measurements indicate that a rotor rotating speed of 73.3 r min-1 can be achieved at a drive voltage of 28.3 V, equivalent to a theoretical motive torque of 517 pN m. Starting voltage results obtained from experimental measurement are in agreement with the developed dynamic model.

Voltage-pulse generator for electron gun

International Nuclear Information System (INIS)

Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

1987-01-01

A voltage-pulse generator with combined capacitive and inductive storage devices of an electron gun is described. The current interrupter is a hydrogen thyratron (TGI1-100/8, TGI1-500/16, or TGI1-1000/25) installed in a short magnetic lens. The current interruption time of the thyratrons is 100-300 nsec. When the capacitive storage device is charged to 1 kV, a voltage pulse with an amplitude of 25 kV is obtained at the load

Enhanced charge efficiency and reduced energy use in capacitive deionization by increasing the discharge voltage.

Science.gov (United States)

Kim, T; Dykstra, J E; Porada, S; van der Wal, A; Yoon, J; Biesheuvel, P M

2015-05-15

Capacitive deionization (CDI) is an electrochemical method for water desalination using porous carbon electrodes. A key parameter in CDI is the charge efficiency, Λ, which is the ratio of salt adsorption over charge in a CDI-cycle. Values for Λ in CDI are typically around 0.5-0.8, significantly less than the theoretical maximum of unity, due to the fact that not only counterions are adsorbed into the pores of the carbon electrodes, but at the same time coions are released. To enhance Λ, ion-exchange membranes (IEMs) can be implemented. With membranes, Λ can be close to unity because the membranes only allow passage for the counterions. Enhancing the value of Λ is advantageous as this implies a lower electrical current and (at a fixed charging voltage) a reduced energy use. We demonstrate how, without the need to include IEMs, the charge efficiency can be increased to values close to the theoretical maximum of unity, by increasing the cell voltage during discharge, with only a small loss of salt adsorption capacity per cycle. In separate constant-current CDI experiments, where after some time the effluent salt concentration reaches a stable value, this value is reached earlier with increased discharge voltage. We compare the experimental results with predictions of porous electrode theory which includes an equilibrium Donnan electrical double layer model for salt adsorption in carbon micropores. Our results highlight the potential of modified operational schemes in CDI to increase charge efficiency and reduce energy use of water desalination. Copyright © 2014 Elsevier Inc. All rights reserved.

Current and capacitance measurements as a fast diagnostic tool for evaluation of semiconductor parameters

CERN Document Server

Kemmer, J; Krause, N; Krieglmeyer, C; Yang Yi

2000-01-01

A fast qualitative method is described for evaluation of semiconductor parameters by analyzing both the capacitance/voltage (C/V) and current/voltage (I/V) characteristics of pn- or Schottky-diodes, which are fabricated on the material under investigation. The method is applied for measurement of recombination and generation lifetimes of minority charge carriers and for determination of doping profiles and distribution of active generation/recombination (G/R) centers after irradiation with Am-alpha particles and deep phosphorus implantation. Measurements on epitaxial silicon result in doping profiles and distributions of active impurities within the epi-layer.

A Capacitive Humidity Sensor Based on Multi-Wall Carbon Nanotubes (MWCNTs

Directory of Open Access Journals (Sweden)

Zhen-Gang Zhao

2009-09-01

Full Text Available A new type of capacitive humidity sensor is introduced in this paper. The sensor consists of two plate electrodes coated with MWCNT films and four pieces of isolating medium at the four corners of the sensor. According to capillary condensation, the capacitance signal of the sensor is sensitive to relative humidity (RH, which could be transformed to voltage signal by a capacitance to voltage converter circuit. The sensor is tested using different saturated saline solutions at the ambient temperature of 25 °C, which yielded approximately 11% to 97% RH, respectively. The function of the MWCNT films, the effect of electrode distance, the temperature character and the repeatability of the sensor are discussed in this paper.

Impact of Slim DC Capacitance on Floating Capacitor H-bridge Motor Drive

DEFF Research Database (Denmark)

Leng, Siyu; Muyeen, S.M.; Al-Durra, Ahmed

2018-01-01

harmonics will be generated in the motor line voltage. This demonstrates the possibility of drastically reducing the dc capacitance of the proposed system. Induction motor as well as H-bridge performance with respect to different dc capacitance values is demonstrated by experiments, which lays......This paper discusses the impact of small dc capacitance in a motor drive using a floating capacitor H-bridge topology. The proposed topology is intended for applications where variable frequency control is not required. Special attention is paid on investigating the second-order dc capacitor...... voltage ripples, whose influence on the induction motor as well as on the motor drive itself is of importance. This issue is addressed in this paper through rigorous mathematical formulations. It is found that by inverting the second-order dc ripple voltage using the conventional SVPWM, no harmful...

Low Capacitive Inductors for Fast Switching Devices in Active Power Factor Correction Applications

DEFF Research Database (Denmark)

Hernandez Botella, Juan Carlos; Petersen, Lars Press; Andersen, Michael A. E.

2014-01-01

This paper examines different winding strategies for reduced capacitance inductors in active power factor correction circuits (PFC). The effect of the parasitic capacitance is analyzed from an electro magnetic compatibility (EMI) and efficiency point of views. The purpose of this work is to inves......This paper examines different winding strategies for reduced capacitance inductors in active power factor correction circuits (PFC). The effect of the parasitic capacitance is analyzed from an electro magnetic compatibility (EMI) and efficiency point of views. The purpose of this work...... is to investigate different winding approaches and identify suitable solutions for high switching frequency/high speed transition PFC designs. A low parasitic capacitance PCB based inductor design is proposed to address the challenges imposed by high switching frequency PFC Boost converters....

Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP

International Nuclear Information System (INIS)

Ahaitouf, Ali; Ahaitouf, Abdelaziz; Salvestrini, Jean Paul; Srour, Hussein

2011-01-01

Based on current voltage (I—V g ) and capacitance voltage (C—V g ) measurements, a reliable procedure is proposed to determine the effective surface potential V d (V g ) in Schottky diodes. In the framework of thermionic emission, our analysis includes both the effect of the series resistance and the ideality factor, even voltage dependent. This technique is applied to n-type indium phosphide (n-InP) Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C—V g measurements. The study clearly shows that the depletion width and the flat band barrier height deduced from C—V g , which are important parameters directly related to the surface potential in the semiconductor, should be estimated within our approach to obtain more reliable information. (semiconductor devices)

Compensation of the detector capacitance presented to charge-sensitive preamplifiers using the Miller effect

Energy Technology Data Exchange (ETDEWEB)

Kwon, Inyong, E-mail: iykwon@umich.edu [University of Michigan, Ann Arbor, MI (United States); Kang, Taehoon, E-mail: thnkang@umich.edu [University of Michigan, Ann Arbor, MI (United States); Wells, Byron T., E-mail: wells@galtresearch.com [Galt LLC, Ypsilanti, MI (United States); D’Aries, Lawrence J., E-mail: lawrence.j.daries.civ@mail.mil [Picatinny Arsenal, Rockaway Township, NJ (United States); Hammig, Mark D., E-mail: hammig@umich.edu [University of Michigan, Ann Arbor, MI (United States)

2015-06-01

This paper describes an integrated circuit design for a modified charge-sensitive amplifier (CSA) that compensates for the effect of capacitance presented by nuclear radiation detectors and other sensors. For applications that require large area semiconductor detectors or for those semiconductor sensors derived from high permittivity materials such as PbSe, the detector capacitance can degrade the system gain and bandwidth of a front-end preamplifier, resulting in extended rise times and attenuated output voltage signals during pulse formation. In order to suppress the effect of sensor capacitance, we applied a bootstrap technique into a traditional CSA. The technique exploits the Miller effect by reducing the effective voltage difference between the two sides of a radiation detector which minimizes the capacitance presented to the differential common-source amplifier. This new configuration is successfully designed to produce effective gain even at high detector capacitance. The entire circuit, including a core CSA with feedback components and a bootstrap amplifier, are implemented in a 0.18 μm CMOS process with a 3.3 V supply voltage. - Highlights: • A modified CSA was implemented for detector capacitance compensation. • Increasing detector capacitance degrades gain and rise time. • A bootstrap amplifier exploiting the Miller effect is described. • It allows using large area radiation sensors for high radiation-interaction rates. • Intensive noise analyses show that SNR is much better with the technique.

Accurate sizing of supercapacitors storage system considering its capacitance variation.

OpenAIRE

Trieste , Sony; Bourguet , Salvy; Olivier , Jean-Christophe; Loron , Luc; Le Claire , Jean-Claude

2011-01-01

International audience; This paper highlights the energy errors made for the design of supercapacitors used as a main energy source. First of all, the paper presents the two definitions of capacitance of a capacitance-voltage dependent material. The number of supercapacitors is important for the application purchasing cost. That is why the paper introduces an analytical model and an electrical model along with an identification method for the capacitance variation. This variation is presented...

Molecular Insights into Carbon Nanotube Supercapacitors: Capacitance Independent of Voltage and Temperature

Energy Technology Data Exchange (ETDEWEB)

Feng, Guang [Vanderbilt Univ., Nashville, TN (United States). Dept. of Chemical and Biomolecular Engineering; Li, Song [Vanderbilt Univ., Nashville, TN (United States). Dept. of Chemical and Biomolecular Engineering; Atchison, Jennifer S. [Leibniz Inst. for New Materials (INM), Saarbrücken (Germany); Presser, Volker [Leibniz Inst. for New Materials (INM), Saarbrücken (Germany); Cummings, Peter T. [Vanderbilt Univ., Nashville, TN (United States). Dept. of Chemical and Biomolecular Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science

2013-04-12

Molecular dynamics (MD) simulations of supercapacitors with single-walled carbon nanotube (SWCNT) electrodes in room-temperature ionic liquids were performed to investigate the influences of the applied electrical potential, the radius/curvature of SWCNTs, and temperature on their capacitive behavior. It is found that (1) SWCNTs-based supercapacitors exhibit a near-flat capacitance–potential curve, (2) the capacitance increases as the tube radius decreases, and (3) the capacitance depends little on the temperature. We report the first MD study showing the influence of the electrode curvature on the capacitance–potential curve and negligible dependence of temperature on capacitance of tubular electrode. The latter is in good agreement with recent experimental findings and is attributed to the similarity of the electrical double layer (EDL) microstructure with temperature varying from 260 to 400 K. The electrode curvature effect is explained by the dominance of charge overscreening and increased ion density per unit area of electrode surface.

Transient voltage sharing in series-coupled high voltage switches

Directory of Open Access Journals (Sweden)

Editorial Office

1992-07-01

Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

Capacitors and Resistance-Capacitance Networks.

Science.gov (United States)

Balabanian, Norman; Root, Augustin A.

This programed textbook was developed under a contract with the United States Office of Education as Number 5 in a series of materials for use in an electrical engineering sequence. It is divided into three parts--(1) capacitors, (2) voltage-current relationships, and (3) simple resistance-capacitance networks. (DH)

Design of a High Voltage Bidirectional DC-DC Converter for Driving Capacitive Incremental Actuators usable in Electric Vehicles (EVs)

DEFF Research Database (Denmark)

Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.

2014-01-01

the converter for efficiently charging and discharging the capacitive actuator from 0 V to 2.5 kV and vice versa, respectively. The converter is used to drive a dielectric electro active polymer (DEAP) based capacitive incremental actuator, which has the potential to be used in automotive (e.g., EVs), space...

Simulation of cold plasma in a chamber under high- and low-frequency voltage conditions for a capacitively coupled plasma

Institute of Scientific and Technical Information of China (English)

Hao Daoxin; Cheng Jia; Ji Linhong; Sun Yuchun

2012-01-01

The characteristics of cold plasma,especially for a dual-frequency capacitively coupled plasma (CCP),play an important role for plasma enhanced chemical vapor deposition,which stimulates further studies using different methods.In this paper,a 2D fluid model was constructed for N2 gas plasma simulations with CFD-ACE+,a commercial multi-physical software package.First,the distributions of electric potential (Epot),electron number density (Ne),N number density (N) and electron temperature (Te) are described under the condition of high frequency (HF),13.56 MHz,HF voltage,300 V,and low-frequency (LF) voltage,0 V,particularly in the sheath.Based on this,the influence of HF on Ne is further discussed under different HF voltages of 200 V,300 V,400 V,separately,along with the influence of LF,0.3 MHz,and various LF voltages of 500 V,600 V,700 V.The results show that sheaths of about 3 mm are formed near the two electrodes,in which Epot and Te vary extensively with time and space,while in the plasma bulk Epot changes synchronously with an electric potential of about 70 V and Te varies only in a small range.N is also modulated by the radio frequency,but the relative change in N is small.Ne varies only in the sheath,while in the bulk it is steady at different time steps.So,by comparing Ne in the plasma bulk at the steady state,we can see that Ne will increase when HF voltage increases.Yet,Ne will slightly decrease with the increase of LF voltage.At the same time,the homogeneity will change in both x and y directions.So both HF and LF voltages should be carefully considered in order to obtain a high-density,homogeneous plasma.

Experimental study of a variable-capacitance micromotor with electrostatic suspension

International Nuclear Information System (INIS)

Han, F T; Wu, Q P; Wang, L

2010-01-01

A variable-capacitance micromotor where the rotor is supported electrostatically in five degrees of freedom was designed, fabricated and tested in order to study the behavior of this electrostatic motor. The micromachined device is based on a glass/silicon/glass stack bonding structure, fabricated by bulk micromachining and initially operated in atmospheric environment. The analytical torque model is obtained by calculating the capacitances between different stator electrodes and the rotor. Capacitance values in the order of 10 −13 pF and torque values in the order of 10 −10 N m have been calculated from the motor geometry and attainable drive voltage. A dynamic model of the motor is proposed by further estimating the air-film damping effect in an effort to explain the experimental rotation measurements. Experimental results of starting voltage, continuous operation, switching response and electric bearing of the micromotor are presented and discussed. Preliminary measurements indicate that a rotor rotating speed of 73.3 r min −1 can be achieved at a drive voltage of 28.3 V, equivalent to a theoretical motive torque of 517 pN m. Starting voltage results obtained from experimental measurement are in agreement with the developed dynamic model

Arsenic removal from groundwater using low-cost carbon composite electrodes for capacitive deionization.

Science.gov (United States)

Lee, Ju-Young; Chaimongkalayon, Nantanee; Lim, Jinho; Ha, Heung Yong; Moon, Seung-Hyeon

2016-01-01

Affordable carbon composite electrodes were developed to treat low-concentrated groundwater using capacitive deionization (CDI). A carbon slurry prepared using activated carbon powder (ACP), poly(vinylidene fluoride), and N-methyl-2-pyrrolidone was employed as a casting solution to soak in a low-cost porous substrate. The surface morphology of the carbon composite electrodes was investigated using a video microscope and scanning electron microscopy. The capacitance and electrical conductivity of the carbon composite electrodes were then examined using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), respectively. According to the CV and EIS measurements, the capacitances and electrical conductivities of the carbon composite electrodes were in the range of 8.35-63.41 F g(-1) and 0.298-0.401 S cm(-1), respectively, depending on ACP contents. A CDI cell was assembled with the carbon composite electrodes instead of with electrodes and current collectors. The arsenate removal test included an investigation of the optimization of several important operating parameters, such as applied voltage and solution pH, and it achieved 98.8% removal efficiency using a 1 mg L(-1) arsenate solution at a voltage of 2 V and under a pH 9 condition.

Comparison of gate capacitance extraction methodologies

NARCIS (Netherlands)

Kazmi, S.N.R.; Schmitz, Jurriaan

2008-01-01

In recent years, many new capacitance-voltage measurement approaches have been presented in literature. New approaches became necessary with the rapidly increasing gate current density in newer CMOS generations. Here we present a simulation platform using Silvaco software, to describe the full chain

Classic and Quantum Capacitances in Bernal Bilayer and Trilayer Graphene Field Effect Transistor

Directory of Open Access Journals (Sweden)

Hatef Sadeghi

2013-01-01

Full Text Available Our focus in this study is on characterizing the capacitance voltage (C-V behavior of Bernal stacking bilayer graphene (BG and trilayer graphene (TG as the channel of FET devices. The analytical models of quantum capacitance (QC of BG and TG are presented. Although QC is smaller than the classic capacitance in conventional devices, its contribution to the total metal oxide semiconductor capacitor in graphene-based FET devices becomes significant in the nanoscale. Our calculation shows that QC increases with gate voltage in both BG and TG and decreases with temperature with some fluctuations. However, in bilayer graphene the fluctuation is higher due to its tunable band structure with external electric fields. In similar temperature and size, QC in metal oxide BG is higher than metal oxide TG configuration. Moreover, in both BG and TG, total capacitance is more affected by classic capacitance as the distance between gate electrode and channel increases. However, QC is more dominant when the channel becomes thinner into the nanoscale, and therefore we mostly deal with quantum capacitance in top gate in contrast with bottom gate that the classic capacitance is dominant.

Capacitance Regression Modelling Analysis on Latex from Selected Rubber Tree Clones

International Nuclear Information System (INIS)

Rosli, A D; Baharudin, R; Hashim, H; Khairuzzaman, N A; Mohd Sampian, A F; Abdullah, N E; Kamaru'zzaman, M; Sulaiman, M S

2015-01-01

This paper investigates the capacitance regression modelling performance of latex for various rubber tree clones, namely clone 2002, 2008, 2014 and 3001. Conventionally, the rubber tree clones identification are based on observation towards tree features such as shape of leaf, trunk, branching habit and pattern of seeds texture. The former method requires expert persons and very time-consuming. Currently, there is no sensing device based on electrical properties that can be employed to measure different clones from latex samples. Hence, with a hypothesis that the dielectric constant of each clone varies, this paper discusses the development of a capacitance sensor via Capacitance Comparison Bridge (known as capacitance sensor) to measure an output voltage of different latex samples. The proposed sensor is initially tested with 30ml of latex sample prior to gradually addition of dilution water. The output voltage and capacitance obtained from the test are recorded and analyzed using Simple Linear Regression (SLR) model. This work outcome infers that latex clone of 2002 has produced the highest and reliable linear regression line with determination coefficient of 91.24%. In addition, the study also found that the capacitive elements in latex samples deteriorate if it is diluted with higher volume of water. (paper)

Capacitive Coupling in Double-Circuit Transmission Lines

Directory of Open Access Journals (Sweden)

Zdenka Benesova

2004-01-01

Full Text Available The paper describes an algorithm for calculation of capacitances and charges on conductors in systems with earth wires and in double-circuit overhead lines with respect to phase arrangement. A balanced voltage system is considered. A suitable transposition of individual conductors enables to reduce the electric and magnetic fields in vicinity of overhead lines and to limit the inductive and capacitive linkage. The procedure is illustrated on examples the results of which lead to particular recommendations for designers.

Design of shielded voltage divider for impulse voltage measurement

International Nuclear Information System (INIS)

Kato, Shohei; Kouno, Teruya; Maruyama, Yoshio; Kikuchi, Koji.

1976-01-01

The dividers used for the study of the insulation and electric discharge phenomena in high voltage equipments have the problems of the change of response characteristics owing to adjacent bodies and of induced noise. To improve the characteristics, the enclosed type divider shielded with metal has been investigated, and the divider of excellent response has been obtained by adopting the frequency-separating divider system, which is divided into two parts, resistance divider (lower frequency region) and capacitance divider (higher frequency region), for avoiding to degrade the response. Theoretical analysis was carried out in the cases that residual inductance can be neglected or can not be neglected in the small capacitance divider, and that the connecting wires are added. Next, the structure of the divider and the design of the electric field for the divider manufactured on the basis of the theory are described. The response characteristics were measured. The results show that 1 MV impulse voltage can be measured within the response time of 10 ns. Though this divider aims at the impulse voltage, the duration time of which is about that of standard lightning impulse, in view of the heat capacity because of the input resistance of 10.5 kΩ, it is expected that the divider can be applied to the voltage of longer duration time by increasing the input resistance in future. (Wakatsuki, Y.)

Design and analysis of optimised class E power amplifier using shunt capacitance in the output structure

Science.gov (United States)

Hayati, Mohsen; Roshani, Sobhan; Zirak, Ali Reza

2017-05-01

In this paper, a class E power amplifier (PA) with operating frequency of 1 MHz is presented. MOSFET non-linear drain-to-source parasitic capacitance, linear external capacitance at drain-to-source port and linear shunt capacitance in the output structure are considered in design theory. One degree of freedom is added to the design of class E PA, by assuming the shunt capacitance in the output structure in the analysis. With this added design degree of freedom it is possible to achieve desired values for several parameters, such as output voltage, load resistance and operating frequency, while both zero voltage and zero derivative switching (ZVS and ZDS) conditions are satisfied. In the conventional class E PA, high value of peak switch voltage results in limitations for the design of amplifier, while in the presented structure desired specifications could be achieved with the safe margin of peak switch voltage. The results show that higher operating frequency and output voltage can also be achieved, compared to the conventional structure. PSpice software is used in order to simulate the designed circuit. The presented class E PA is designed, fabricated and measured. The measured results are in good agreement with simulation and theory results.

A compact 100 kV high voltage glycol capacitor.

Science.gov (United States)

Wang, Langning; Liu, Jinliang; Feng, Jiahuai

2015-01-01

A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

Suppression of the high-frequency disturbances in low-voltage circuits caused by disconnector operation in high-voltage open-air substations

Energy Technology Data Exchange (ETDEWEB)

Savic, M.S.

1986-07-01

The switching off and on of small capacitive currents charging busbar capacitances, connection conductors and open circuit breakers with disconnectors causes high-frequency transients in high-voltage networks. In low voltage circuits, these transient processes induce dangerous overvoltages for the electronic equipment in the substation. A modified construction of the disconnector with a damping resistor was investigated. Digital simulation of the transient process in a high-voltage network during the arcing period between the disconnector contacts with and without damping resistor were performed. A significant decrease of the arcing duration and the decrease of the electromagnetic field magnitude in the vicinity of the operating disconnector were noticed. In the low voltage circuit protected with the surge arrester, the overvoltage magnitude was not affected by the damping resistor due to the arrester protection effect.

3D simulations and modeling of new low capacitance silicon pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Xiong, Bo; Li, Yu Yun [School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105 (China); Center for Semiconductor Particle and photon Imaging Detector Development and Fabrication, Xiangtan University, Xiangtan 411105 (China); Li, Zheng, E-mail: zhengli58@gmail.com [School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105 (China); Center for Semiconductor Particle and photon Imaging Detector Development and Fabrication, Xiangtan University, Xiangtan 411105 (China)

2016-09-21

With signal to noise ratio (S/N) being a key parameter of a high performance detector, reducing the detector noise has been one of the main tasks in detector development. A new low capacitance silicon pixel detector is proposed, which is based on a new electrode geometry with reduced effective electrode area while keeping the sensitive volume unchanged. Detector electrical characteristics including electrostatic potential, electric field, full depletion voltage, and capacitance have been simulated in detail using a 3D TCAD tool. From these simulations and calculations, we confirm that the new detector structure has a much reduced capacitance (by a factor of 3) as compared to the traditional pixel detectors with the same sensitive volume. This reduction in detector capacitance can certainly improve the detector signal to noise ratio. However, the full depletion voltage for the new structure is larger than that of the traditional one due to the small electrode effect.

Protein phosphatases decrease their activity during capacitation: a new requirement for this event.

Directory of Open Access Journals (Sweden)

Janetti R Signorelli

Full Text Available There are few reports on the role of protein phosphatases during capacitation. Here, we report on the role of PP2B, PP1, and PP2A during human sperm capacitation. Motile sperm were resuspended in non-capacitating medium (NCM, Tyrode's medium, albumin- and bicarbonate-free or in reconstituted medium (RCM, NCM plus 2.6% albumin/25 mM bicarbonate. The presence of the phosphatases was evaluated by western blotting and the subcellular localization by indirect immunofluorescence. The function of these phosphatases was analyzed by incubating the sperm with specific inhibitors: okadaic acid, I2, endothall, and deltamethrin. Different aliquots were incubated in the following media: 1 NCM; 2 NCM plus inhibitors; 3 RCM; and 4 RCM plus inhibitors. The percent capacitated sperm and phosphatase activities were evaluated using the chlortetracycline assay and a phosphatase assay kit, respectively. The results confirm the presence of PP2B and PP1 in human sperm. We also report the presence of PP2A, specifically, the catalytic subunit and the regulatory subunits PR65 and B. PP2B and PP2A were present in the tail, neck, and postacrosomal region, and PP1 was present in the postacrosomal region, neck, middle, and principal piece of human sperm. Treatment with phosphatase inhibitors rapidly (≤1 min increased the percent of sperm depicting the pattern B, reaching a maximum of ∼40% that was maintained throughout incubation; after 3 h, the percent of capacitated sperm was similar to that of the control. The enzymatic activity of the phosphatases decreased during capacitation without changes in their expression. The pattern of phosphorylation on threonine residues showed a sharp increase upon treatment with the inhibitors. In conclusion, human sperm express PP1, PP2B, and PP2A, and the activity of these phosphatases decreases during capacitation. This decline in phosphatase activities and the subsequent increase in threonine phosphorylation may be an important

Design of capacitance measurement module for determining critical cold temperature of tea leaves

Directory of Open Access Journals (Sweden)

Yongzong Lu

2016-12-01

Full Text Available Critical cold temperature is one of the most crucial control factors for crop frost protection. Tea leaf's capacitance has a significant response to cold injury and appears as a peak response to a typical low temperature which is the critical temperature. However, the testing system is complex and inconvenient. In view of these, a tea leaf's critical temperature detector based on capacitance measurement module was designed and developed to measure accurately and conveniently the capacitance. Software was also designed to measure parameters, record data, query data as well as data deletion module. The detector utilized the MSP430F149 MCU as the control core and ILI9320TFT as the display module, and its software was compiled by IAR5.3. Capacitance measurement module was the crucial part in the overall design which was based on the principle of oscillator. Based on hardware debugging and stability analysis of capacitance measurement module, it was found that the output voltage of the capacitance measurement circuit is stable with 0.36% average deviation. The relationship between capacitance and 1/Uc2 was found to be linear distribution with the determination coefficient above 0.99. The result indicated that the output voltage of capacitance measurement module well corresponded to the change in value of the capacitance. The measurement error of the circuit was also within the required range of 0 to 100 pF which meets the requirement of tea leaf's capacitance. Keywords: Tea leaves, Critical cold temperature, Capacitance peak response, Frost protection, Detector

Capacitive properties of polypyrrole/activated carbon composite

Directory of Open Access Journals (Sweden)

Porjazoska-Kujundziski Aleksandra

2014-01-01

Full Text Available Electrochemical synthesis of polypyrrole (PPy and polypyrrole / activated carbon (PPy / AC - composite films, with a thickness between 0.5 and 15 μm were performed in a three electrode cell containing 0.1 mol dm-3 Py, 0.5 mol dm-3 NaClO4 dissolved in ACN, and dispersed particles of AC (30 g dm-3. Electrochemical characterization of PPy and PPy / AC composites was performed using cyclic voltammetry (CV and electrochemical impedance spectroscopy (EIS techniques. The linear dependences of the capacitance (qC, redox capacitance (qred, and limiting capacitance (CL of PPy and PPy / AC - composite films on their thickness (L, obtained by electrochemical and impedance analysis, indicate a nearly homogeneous distribution of the incorporated AC particles in the composite films (correlation coefficient between 0.991 and 0.998. The significant enhancement of qC, qred, and CL, was observed for composite films (for ∼40 ± 5% in respect to that of the “pure” PPy. The decreased values of a volume resistivity in the reduced state of the composite film, ρ = 1.3 ⋅ 106 Ω cm (for L = 7.5 μm, for two orders of magnitude, compared to that of PPy - film with the same thickness, ρ ∼ 108 Ω cm, was also noticed.

Capacitance enhancement of polyaniline coated curved-graphene supercapacitors in a redox-active electrolyte

Science.gov (United States)

Chen, Wei; Rakhi, R. B.; Alshareef, H. N.

2013-05-01

We show, for the first time, a redox-active electrolyte in combination with a polyaniline-coated curved graphene active material to achieve significant enhancement in the capacitance (36-92% increase) compared to supercapacitors that lack the redox-active contribution from the electrolyte. The supercapacitors based on the redox-active electrolyte also exhibit excellent rate capability and very long cycling performance (>50 000 cycles).We show, for the first time, a redox-active electrolyte in combination with a polyaniline-coated curved graphene active material to achieve significant enhancement in the capacitance (36-92% increase) compared to supercapacitors that lack the redox-active contribution from the electrolyte. The supercapacitors based on the redox-active electrolyte also exhibit excellent rate capability and very long cycling performance (>50 000 cycles). Electronic supplementary information (ESI) available: Experimental section, supporting figures including SEM, TEM, XPS, BET, CV and CD curves and a summary table of capacitance. See DOI: 10.1039/c3nr00773a

Multifunctional voltage source inverter for renewable energy integration and power quality conditioning.

Science.gov (United States)

Dai, NingYi; Lam, Chi-Seng; Zhang, WenChen

2014-01-01

In order to utilize the energy from the renewable energy sources, power conversion system is necessary, in which the voltage source inverter (VSI) is usually the last stage for injecting power to the grid. It is an economical solution to add the function of power quality conditioning to the grid-connected VSI in the low-voltage distribution system. Two multifunctional VSIs are studied in this paper, that is, inductive-coupling VSI and capacitive-coupling VSI, which are named after the fundamental frequency impedance of their coupling branch. The operation voltages of the two VSIs are compared when they are used for renewable energy integration and power quality conditioning simultaneously. The operation voltage of the capacitive-coupling VSI can be set much lower than that of the inductive-coupling VSI when reactive power is for compensating inductive loads. Since a large portion of the loads in the distribution system are inductive, the capacitive-coupling VSI is further studied. The design and control method of the multifunctional capacitive-coupling VSI are proposed in this paper. Simulation and experimental results are provided to show its validity.

Performance, stability and operation voltage optimization of screen-printed aqueous supercapacitors.

Science.gov (United States)

Lehtimäki, Suvi; Railanmaa, Anna; Keskinen, Jari; Kujala, Manu; Tuukkanen, Sampo; Lupo, Donald

2017-04-06

Harvesting micropower energy from the ambient environment requires an intermediate energy storage, for which printed aqueous supercapacitors are well suited due to their low cost and environmental friendliness. In this work, a systematic study of a large set of devices is used to investigate the effect of process variability and operating voltage on the performance and stability of screen printed aqueous supercapacitors. The current collectors and active layers are printed with graphite and activated carbon inks, respectively, and aqueous NaCl used as the electrolyte. The devices are characterized through galvanostatic discharge measurements for quantitative determination of capacitance and equivalent series resistance (ESR), as well as impedance spectroscopy for a detailed study of the factors contributing to ESR. The capacitances are 200-360 mF and the ESRs 7.9-12.7 Ω, depending on the layer thicknesses. The ESR is found to be dominated by the resistance of the graphite current collectors and is compatible with applications in low-power distributed electronics. The effects of different operating voltages on the capacitance, leakage and aging rate of the supercapacitors are tested, and 1.0 V found to be the optimal choice for using the devices in energy harvesting applications.

The passive cable properties of hair cell stereocilia and their contribution to somatic capacitance measurements.

Science.gov (United States)

Breneman, Kathryn D; Highstein, Stephen M; Boyle, Richard D; Rabbitt, Richard D

2009-01-01

Somatic measurements of whole-cell capacitance are routinely used to understand physiologic events occurring in remote portions of cells. These studies often assume the intracellular space is voltage-clamped. We questioned this assumption in auditory and vestibular hair cells with respect to their stereocilia based on earlier studies showing that neurons, with radial dimensions similar to stereocilia, are not always isopotential under voltage-clamp. To explore this, we modeled the stereocilia as passive cables with transduction channels located at their tips. We found that the input capacitance measured at the soma changes when the transduction channels at the tips of the stereocilia are open compared to when the channels are closed. The maximum capacitance is felt with the transducer closed but will decrease as the transducer opens due to a length-dependent voltage drop along the stereocilium length. This potential drop is proportional to the intracellular resistance and stereocilium tip conductance and can produce a maximum capacitance error on the order of fF for single stereocilia and pF for the bundle.

Influence of nonelectrostatic ion-ion interactions on double-layer capacitance

Science.gov (United States)

Zhao, Hui

2012-11-01

Recently a Poisson-Helmholtz-Boltzmann (PHB) model [Bohinc , Phys. Rev. EPLEEE81539-375510.1103/PhysRevE.85.031130 85, 031130 (2012)] was developed by accounting for solvent-mediated nonelectrostatic ion-ion interactions. Nonelectrostatic interactions are described by a Yukawa-like pair potential. In the present work, we modify the PHB model by adding steric effects (finite ion size) into the free energy to derive governing equations. The modified PHB model is capable of capturing both ion specificity and ion crowding. This modified model is then employed to study the capacitance of the double layer. More specifically, we focus on the influence of nonelectrostatic ion-ion interactions on charging a double layer near a flat surface in the presence of steric effects. We numerically compute the differential capacitance as a function of the voltage under various conditions. At small voltages and low salt concentrations (dilute solution), we find out that the predictions from the modified PHB model are the same as those from the classical Poisson-Boltzmann theory, indicating that nonelectrostatic ion-ion interactions and steric effects are negligible. At moderate voltages, nonelectrostatic ion-ion interactions play an important role in determining the differential capacitance. Generally speaking, nonelectrostatic interactions decrease the capacitance because of additional nonelectrostatic repulsion among excess counterions inside the double layer. However, increasing the voltage gradually favors steric effects, which induce a condensed layer with crowding of counterions near the electrode. Accordingly, the predictions from the modified PHB model collapse onto those computed by the modified Poisson-Boltzmann theory considering steric effects alone. Finally, theoretical predictions are compared and favorably agree with experimental data, in particular, in concentrated solutions, leading one to conclude that the modified PHB model adequately predicts the diffuse

A capacitively coupled dose-rate-dependent transient upset mechanism in a bipolar memory

International Nuclear Information System (INIS)

Turfler, R.M.; Pease, R.L.; Dinger, G.; Armstrong, B.

1992-01-01

This paper reports on a pattern sensitivity that was observed in the threshold dose rate response of a bipolar 16K PROM for radiation pulse widths of 20-100 ns. For the worst case pattern, the upset threshold was a factor of three lower than for the commonly used checkerboard pattern. The mechanism for this pattern sensitivity was found to be a capacitively coupled voltage transient on a sensitive node which caused a low-to-high transition at the output. A design fix was implemented to significantly alter the ratio of the two parasitic capacitances in a capacitive divider which reduced the amplitude of the voltage transient at the sensitive node. It was demonstrated that in the redesign, the pattern sensitivity was eliminated

Nonlinear dynamics of capacitive charging and desalination by porous electrodes

Science.gov (United States)

Biesheuvel, P. M.; Bazant, M. Z.

2010-03-01

The rapid and efficient exchange of ions between porous electrodes and aqueous solutions is important in many applications, such as electrical energy storage by supercapacitors, water desalination and purification by capacitive deionization, and capacitive extraction of renewable energy from a salinity difference. Here, we present a unified mean-field theory for capacitive charging and desalination by ideally polarizable porous electrodes (without Faradaic reactions or specific adsorption of ions) valid in the limit of thin double layers (compared to typical pore dimensions). We illustrate the theory for the case of a dilute, symmetric, binary electrolyte using the Gouy-Chapman-Stern (GCS) model of the double layer, for which simple formulae are available for salt adsorption and capacitive charging of the diffuse part of the double layer. We solve the full GCS mean-field theory numerically for realistic parameters in capacitive deionization, and we derive reduced models for two limiting regimes with different time scales: (i) in the “supercapacitor regime” of small voltages and/or early times, the porous electrode acts like a transmission line, governed by a linear diffusion equation for the electrostatic potential, scaled to the RC time of a single pore, and (ii) in the “desalination regime” of large voltages and long times, the porous electrode slowly absorbs counterions, governed by coupled, nonlinear diffusion equations for the pore-averaged potential and salt concentration.

"Negative capacitance" in resistor-ferroelectric and ferroelectric-dielectric networks: Apparent or intrinsic?

Science.gov (United States)

Saha, Atanu K.; Datta, Suman; Gupta, Sumeet K.

2018-03-01

In this paper, we describe and analytically substantiate an alternate explanation for the negative capacitance (NC) effect in ferroelectrics (FE). We claim that the NC effect previously demonstrated in resistance-ferroelectric (R-FE) networks does not necessarily validate the existence of "S" shaped relation between polarization and voltage (according to Landau theory). In fact, the NC effect can be explained without invoking the "S"-shaped behavior of FE. We employ an analytical model for FE (Miller model) in which the steady state polarization strictly increases with the voltage across the FE and show that despite the inherent positive FE capacitance, reduction in FE voltage with the increase in its charge is possible in a R-FE network as well as in a ferroelectric-dielectric (FE-DE) stack. This can be attributed to a large increase in FE capacitance near the coercive voltage coupled with the polarization lag with respect to the electric field. Under certain conditions, these two factors yield transient NC effect. We analytically derive conditions for NC effect in R-FE and FE-DE networks. We couple our analysis with extensive simulations to explain the evolution of NC effect. We also compare the trends predicted by the aforementioned Miller model with Landau-Khalatnikov (L-K) model (static negative capacitance due to "S"-shape behaviour) and highlight the differences between the two approaches. First, with an increase in external resistance in the R-FE network, NC effect shows a non-monotonic behavior according to Miller model but increases according to L-K model. Second, with the increase in ramp-rate of applied voltage in the FE-DE stack, NC effect increases according to Miller model but decreases according to L-K model. These results unveil a possible way to experimentally validate the actual reason of NC effect in FE.

Capacitance-voltage characteristics of (Al/Ti)/Al{sub 2}O{sub 3}/n-GaN MIS structures

Energy Technology Data Exchange (ETDEWEB)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Nikolaev, A. E.; Lundin, V. V.; Sakharov, A. V.; Tsatsulnikov, A. F. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Afanas’ev, A. V.; Romanov, A. A.; Osachev, E. V. [St. Petersburg Electrotechnical University LETI (Russian Federation)

2015-08-15

The capacitance-voltage characteristics of (Al/Ti)/Al{sub 2}O{sub 3}/n-GaN metal—insulator-semiconductor (MIS) structures are measured and analyzed. n-Type GaN films are grown on sapphire (0001) substrates by the metal-organic chemical vapor deposition method. An aluminum-oxide layer with a thickness of 60 nm is deposited onto the surface of GaN by the method of atomic-layer deposition from the gas phase. Metallic contacts are deposited by the electron-beam evaporation of titanium and aluminum in vacuum. According to the measurement results, the breakdown-field strength of the oxide, its dielectric constant, and the integrated electron density of states at the oxide-semiconductor interface are 5 × 10{sup 6} V/cm, 7.5, and 3 × 10{sup 12} cm{sup −2}, respectively.

Time varying voltage combustion control and diagnostics sensor

Science.gov (United States)

Chorpening, Benjamin T [Morgantown, WV; Thornton, Jimmy D [Morgantown, WV; Huckaby, E David [Morgantown, WV; Fincham, William [Fairmont, WV

2011-04-19

A time-varying voltage is applied to an electrode, or a pair of electrodes, of a sensor installed in a fuel nozzle disposed adjacent the combustion zone of a continuous combustion system, such as of the gas turbine engine type. The time-varying voltage induces a time-varying current in the flame which is measured and used to determine flame capacitance using AC electrical circuit analysis. Flame capacitance is used to accurately determine the position of the flame from the sensor and the fuel/air ratio. The fuel and/or air flow rate (s) is/are then adjusted to provide reduced flame instability problems such as flashback, combustion dynamics and lean blowout, as well as reduced emissions. The time-varying voltage may be an alternating voltage and the time-varying current may be an alternating current.

Nanoscale capacitance imaging with attofarad resolution using ac current sensing atomic force microscopy

International Nuclear Information System (INIS)

Fumagalli, L; Ferrari, G; Sampietro, M; Casuso, I; MartInez, E; Samitier, J; Gomila, G

2006-01-01

Nanoscale capacitance imaging with attofarad resolution (∼1 aF) of a nano-structured oxide thin film, using ac current sensing atomic force microscopy, is reported. Capacitance images are shown to follow the topographic profile of the oxide closely, with nanometre vertical resolution. A comparison between experimental data and theoretical models shows that the capacitance variations observed in the measurements can be mainly associated with the capacitance probed by the tip apex and not with positional changes of stray capacitance contributions. Capacitance versus distance measurements further support this conclusion. The application of this technique to the characterization of samples with non-voltage-dependent capacitance, such as very thin dielectric films, self-assembled monolayers and biological membranes, can provide new insight into the dielectric properties at the nanoscale

Nanoscale capacitance imaging with attofarad resolution using ac current sensing atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Fumagalli, L [Dipartimento di Elettronica e Informazione, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 (Italy); Ferrari, G [Dipartimento di Elettronica e Informazione, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 (Italy); Sampietro, M [Dipartimento di Elettronica e Informazione, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 (Italy); Casuso, I [Departament d' Electronica, Universitat de Barcelona, C/MartIi Franques 1, 08028 Barcelona (Spain); MartInez, E [Plataforma de Nanotecnologia, Parc Cientific de Barcelona, C/ Josep Samitier 1-5, 08028-Barcelona (Spain); Samitier, J [Departament d' Electronica, Universitat de Barcelona, C/MartIi Franques 1, 08028 Barcelona (Spain); Gomila, G [Departament d' Electronica, Universitat de Barcelona, C/MartIi Franques 1, 08028 Barcelona (Spain)

2006-09-28

Nanoscale capacitance imaging with attofarad resolution ({approx}1 aF) of a nano-structured oxide thin film, using ac current sensing atomic force microscopy, is reported. Capacitance images are shown to follow the topographic profile of the oxide closely, with nanometre vertical resolution. A comparison between experimental data and theoretical models shows that the capacitance variations observed in the measurements can be mainly associated with the capacitance probed by the tip apex and not with positional changes of stray capacitance contributions. Capacitance versus distance measurements further support this conclusion. The application of this technique to the characterization of samples with non-voltage-dependent capacitance, such as very thin dielectric films, self-assembled monolayers and biological membranes, can provide new insight into the dielectric properties at the nanoscale.

Capacitive VAr requirements for wind driven self-excited induction generators

International Nuclear Information System (INIS)

Singaravelu, S.; Velusami, S.

2007-01-01

This paper presents the capacitive VAr requirements of a three phase pole changing self-excited induction generator and a single phase self-excited induction generator, used as isolated power sources by a constant speed or a variable speed prime mover, to obtain the desired voltage regulation at various values of load and speed. Different performance criteria such as constant terminal voltage or constant air gap flux have been considered. The developed mathematical model using nodal analysis based on graph theory is quite general in nature and can be used for any combination of the unknown variables such as magnetizing reactance (X M ) and frequency (F) or capacitive reactance (X C ) and frequency (F) or capacitive reactance (X C ) and speed (υ). The proposed model completely avoids the tedious and erroneous manual work of segregating the real and imaginary components of the complex impedance of the machine for deriving the specific model for each operating modes. Moreover, any element, like the core loss component, can be included or excluded from the model if required. Next, to obtain the capacitive VAr requirements of a three phase pole changing self-excited induction generator and a single phase self-excited induction generator, a fuzzy logic approach is used for the first time to find the unknown variables using the above model. The results are presented in a normalized form so that they are valid for a wide range of machines and would be useful for the design of voltage regulators for such generators

Site Selection Strategy of Single-Frequency Tuned R-APF for Background Harmonic Voltage Damping in Power Systems

DEFF Research Database (Denmark)

Sun, Xiaofeng; Zeng, Jian; Chen, Zhe

2013-01-01

, and analyze the harmonic voltage propagation caused by the background harmonic voltage in power systems. Then, a new strategy is proposed for the site selection of resistive active power filter to damp the background harmonic voltage in power systems. Experiments have been performed to verify the theoretical......Series resonance between capacitance and line inductance may magnify background harmonic voltage and worsen the harmonic voltage distortion in power systems. To solve this problem, in this paper, the transmission line theory is used to set up the distributed parameter model of power system feeders...

Minimization of the transformer inter-winding parasitic capacitance for modular stacking power supply applications

DEFF Research Database (Denmark)

Nguyen-Duy, Khiem; Ouyang, Ziwei; Knott, Arnold

2014-01-01

In an isolated power supply, the inter-winding parasitic capacitance plays a vital role in the mitigation of common mode noise currents created by fast voltage transient responses. The lower the transformer inter-winding capacitance, the more immune the power supply is to fast voltage transient...... responses. This requirement is even more critical for modular stacking applications in which multiple power supplies are stacked. This paper addresses the issue by presenting a detailed analysis and design of an unconventional isolated power supply that uses a ring core transformer with a very low inter......-winding parasitic capacitance of 10 pF. Considering its output power of 300 W, this approach yields about 0.033 pF/W inter-winding capacitance over output power, approximately thirty times lower than existing approaches in the literature. This makes the converter a suitable solution for modular stacking of fast...

Capacitive MEMS-based sensors : thermo-mechanical stability and charge trapping

OpenAIRE

van Essen, M.C.

2009-01-01

Micro-Electro Mechanical Systems (MEMS) are generally characterized as miniaturized systems with electrostatically driven moving parts. In many cases, the electrodes are capacitively coupled. This basic scheme allows for a plethora of specifications and functionality. This technology has presently matured and is widely employed in industry. A voltage across the electrodes will attract the movable part. This relation between electric field and separation (or capacitance) can be conveniently em...

Measurements of Voltage Harmonics in 400 kV Transmission Network

Directory of Open Access Journals (Sweden)

Ryszard Pawełek

2014-06-01

Full Text Available The paper deals with the analysis of voltage harmonics measurements performed in the 400 kV transmission network. The voltage was measured by means of three transducers: resistive voltage divider, inductive measuring transformer and capacitive voltage measuring transformer. Instrument errors were estimated for measuring transformers with reference to the harmonic values obtained from the voltage divider.

Stabilization of Voltage Parameters of Induction Generator Excited by a Voltage Inverter

Directory of Open Access Journals (Sweden)

Padalko D.A.

2017-12-01

Full Text Available The article reveals the operational aspects of induction generator. Methods for stabilization of induction generator (IG parameters under inverter excitation are investigated. The study was carried out using mathematical description and simulation modeling in MATLAB Simulink. The paper provides analysis of causes of generated voltage amplitude and frequency displacement when the loading condition and the rate vary. Due to the parametric resonance nature of IG self-excitation, the author introduces the expression that allows estimating the capacitor capacitance required to maintain the generation process, depending on the rotor speed of electric machine, load nature and rate. Based on the studies, it was proved that it is possible to stabilize the IG voltage parameters by maintaining the magnetizing circuit inductance Lm at the constant level., and realizing a control law close to U/f = const. The study proves that using the inverter together with the voltage regulator allows ensuring the quality of electricity corresponding to modern standards. The necessity of problem solving of the required quality of the voltage by the harmonic component for the exciter - inverter with PWM is shown. The prospects of the power generation system based on induction machine (IM with a semiconductor frequency converter, which serves as an adjustable supplier of capacitive current for IM for autonomous objects, are substantiated. The use of semiconductor frequency converters makes it possible to provide high stability of the output voltage parameters and good speed of the mechatronic generation system with an asynchronous machine.

Ultrahigh surface area meso/microporous carbon formed with self-template for high-voltage aqueous supercapacitors

Science.gov (United States)

Yang, Jie; Hu, Jiangtao; Zhu, Min; Zhao, Yan; Chen, Haibiao; Pan, Feng

2017-10-01

A new hierarchically porous carbon has been synthesized with self-template of silica phase from a commercial silicone resin by pyrolysis and subsequent NaOH activation. The obtained carbon materials achieve an ultrahigh specific surface area (2896 m2 g-1) with abundant mesopores. The C800 sample demonstrates excellent performance in supercapacitors, with a high capacitance of 322 F g-1 at 0.5 A g-1 and outstanding rate capability (182 F g-1 at 100 A g-1) in a three-electrode system using 6.0 mol L-1 KOH electrolyte. The energy density is improved by widening the voltage window using 1.0 mol L-1 alkali metal nitrate solutions (LiNO3, NaNO3, KNO3) in which the strong solvation of alkali metal cations and nitrate anions effectively reduce the activity of water. In a symmetric supercapacitor, the maximum operating voltage is essentially restricted by the potential of positive electrode and the total capacitance is dominated by the capacitance of the anion at the positive electrode. The symmetric supercapacitors based on C800 deliver a high energy density of 22.4 Wh kg-1 at a power density of 0.23 kW kg-1 in 1.0 mol L-1 LiNO3 with a voltage of 1.8 V and long-term stability with a retention of 89.87% after 10000 cycles.

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements

Directory of Open Access Journals (Sweden)

S. Taylor

2012-06-01

Full Text Available In capacitance-voltage (C-V measurements, frequency dispersion in high-k dielectrics is often observed. The frequency dependence of the dielectric constant (k-value, that is the intrinsic frequency dispersion, could not be assessed before suppressing the effects of extrinsic frequency dispersion, such as the effects of the lossy interfacial layer (between the high-k thin film and silicon substrate and the parasitic effects. The effect of the lossy interfacial layer on frequency dispersion was investigated and modeled based on a dual frequency technique. The significance of parasitic effects (including series resistance and the back metal contact of the metal-oxide-semiconductor (MOS capacitor on frequency dispersion was also studied. The effect of surface roughness on frequency dispersion is also discussed. After taking extrinsic frequency dispersion into account, the relaxation behavior can be modeled using the Curie-von Schweidler (CS law, the Kohlrausch-Williams-Watts (KWW relationship and the Havriliak-Negami (HN relationship. Dielectric relaxation mechanisms are also discussed.

Instrumentation to Measure the Capacitance of Biosensors by Sinusoidal Wave Method

Directory of Open Access Journals (Sweden)

Pavan Kumar KATHUROJU

2009-09-01

Full Text Available Micro Controller based instrumentation to measure the capacitance of biosensors is developed. It is based on frequency domain technique with sinusoidal wave input. Changes in the capacitance of biosensor because of the analyte specific reaction are calculated by knowing the current flowing through the sample. A dedicated 8-bit microcontroller (AT89C52 and its associated peripherals are employed for the hardware and application specific software is developed in ‘C’ language. The paper describes the methodology, instrumentation details along with a specific application to glucose sensing. The measurements are conducted with glucose oxidase based capacitance biosensor and the obtained results are compared with the conventional method of sugar measurements using the UV-Visible spectroscopy (Phenol-Sulphuric acid assay method. Measurement accuracy of the instrument is found to be ± 5 %. Experiments are conducted on glucose sensor with different bias voltages. It is found that for bias voltages varying from 0.5 to 0.7 Volt, the measurements are good for this application.

cLite – A Capacitive Signal Conditioning IC

Directory of Open Access Journals (Sweden)

Krauss Gudrun

2009-12-01

Full Text Available The ZMD31210 cLite™ – a new member of the ZMDI’s Lite™ family of low-cost sensor signal conditioner (SSC integrated circuits – is described in this paper. The cLite™ is the first conditioner for capacitive sensors. Supporting sensor capacitances from 2 pF up to 260 pF, the new sensor signal conditioner covers a wide range of applications. An important aspect of conditioning a capacitance sensor input signal is the adaptation of the capacitive-to-digital converter (CDC input range to the sensor signal span and offset values in order to maximize accuracy. All typical features of the Lite™ family including the digital calibration math based on EEPROM-stored coefficients and a variety of outputs (I2C™, SPI, PDM, and programmable alarms are integrated in the cLite™ as well. Additional features including a sleep mode and low supply voltage range (down to 2.3 V support the low power concept. The paper focuses in particular on the capacitance sensor adaptation and high precision sensor conditioning.

Plasma Treated Active Carbon for Capacitive Deionization of Saline Water

Directory of Open Access Journals (Sweden)

Aiping Zeng

2017-01-01

Full Text Available The plasma treatment on commercial active carbon (AC was carried out in a capacitively coupled plasma system using Ar + 10% O2 at pressure of 4.0 Torr. The RF plasma power ranged from 50 W to 100 W and the processing time was 10 min. The carbon film electrode was fabricated by electrophoretic deposition. Micro-Raman spectroscopy revealed the highly increased disorder of sp2 C lattice for the AC treated at 75 W. An electrosorption capacity of 6.15 mg/g was recorded for the carbon treated at 75 W in a 0.1 mM NaCl solution when 1.5 V was applied for 5 hours, while the capacity of the untreated AC was 1.01 mg/g. The plasma treatment led to 5.09 times increase in the absorption capacity. The jump of electrosorption capacity by plasma treatment was consistent with the Raman spectra and electrochemical double layer capacitance. This work demonstrated that plasma treatment was a potentially efficient approach to activating biochar to serve as electrode material for capacitive deionization (CDI.

Interfacial Ordering and Accompanying Divergent Capacitance at Ionic Liquid-Metal Interfaces

Science.gov (United States)

Limmer, David T.

2015-12-01

A theory is constructed for dense ionic solutions near charged planar walls that is valid for strong interionic correlations. This theory predicts a fluctuation-induced, first-order transition and spontaneous charge density ordering at the interface, in the presence of an otherwise disordered bulk solution. The surface ordering is driven by applied voltage and results in an anomalous differential capacitance, in agreement with recent simulation results and consistent with experimental observations of a wide array of systems. Explicit forms for the charge density profile and capacitance are given. The theory is compared with numerical results for the charge frustrated Ising model, which is also found to exhibit a voltage driven first-order transition.

Interfacial Ordering and Accompanying Divergent Capacitance at Ionic Liquid-Metal Interfaces.

Science.gov (United States)

Limmer, David T

2015-12-18

A theory is constructed for dense ionic solutions near charged planar walls that is valid for strong interionic correlations. This theory predicts a fluctuation-induced, first-order transition and spontaneous charge density ordering at the interface, in the presence of an otherwise disordered bulk solution. The surface ordering is driven by applied voltage and results in an anomalous differential capacitance, in agreement with recent simulation results and consistent with experimental observations of a wide array of systems. Explicit forms for the charge density profile and capacitance are given. The theory is compared with numerical results for the charge frustrated Ising model, which is also found to exhibit a voltage driven first-order transition.

Design, Development and Testing of a Semi Cylindrical Capacitive Sensor for Liquid Level Measurement

Directory of Open Access Journals (Sweden)

Sagarika PAL

2010-05-01

Full Text Available In the present paper a low cost noncontact semi cylindrical capacitive type liquid level sensor has been designed, developed and tested. The semi cylindrical capacitive sensor consisting of two thin semi cylindrical metal plates separated by a gap distance and mounted around a non conducting storage tank, has been used to measure the liquid level in the tank. The measured capacitance variation with variation of liquid level is linear and obtained in the nano farad range which again has been converted into voltage variation by using proper signal conditioning circuit. Since the sensor is noncontact type it can be used for both conducting and non conducting type of liquid contained within a non conducting tank. For converting the capacitance variation in to voltage variation a series R-L-C resonating circuit has been used instead of conventional bridge circuit. Experimental results confirm the satisfactory performance of the sensor for liquid level measurement.

Investigation of capacitance characteristics in metal/high-k

Indian Academy of Sciences (India)

Keywords. C − V characteristic; high-k dielectric; interface state density; MIS structure; nanotechnology; TCAD simulation. Abstract. Capacitance vs. voltage ( C − V ) curves at AC high frequency of a metal–insulator–semiconductor (MIS) capacitorare investigated in this paper. Bi-dimensional simulations with Silvaco TCAD ...

Ultrahigh capacitance density for multiple ALD-grown MIM capacitor stacks in 3-D silicon

NARCIS (Netherlands)

Klootwijk, J.H.; Jinesh, K.B.; Dekkers, W.; Verhoeven, J.F.C.; Heuvel, van den F.C.; Kim, H.-D.; Blin, D.; Verheijen, M.A.; Weemaes, R.G.R.; Kaiser, M.; Ruigrok, J.J.M.; Roozeboom, F.

2008-01-01

"Trench" capacitors containing multiple metal-insulator-metal (MIM) layer stacks are realized by atomic-layer deposition (ALD), yielding an ultrahigh capacitance density of 440 nF/mm2 at a breakdown voltage VBD > 6 V. This capacitance density on silicon is at least 10 times higher than the values

Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

International Nuclear Information System (INIS)

Seyedi, M. A.; Yao, M.; O'Brien, J.; Dapkus, P. D.; Wang, S. Y.

2013-01-01

We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields 2 , which shows a strong possibility for high-speed applications with a broad area device

Variations in creatine kinase activity and reactive oxygen species levels are involved in capacitation of bovine spermatozoa.

Science.gov (United States)

Córdoba, M; Pintos, L; Beconi, M T

2008-12-01

The generation of reactive oxygen species (ROS) is associated with some factors such as oxidative substrate sources, mitochondrial function and NAD(P)H oxidase activity. In bovine spermatozoa, heparin capacitation produces a respiratory burst sensitive to diphenyleneiodonium (DPI). Creatine kinase (CK) is related to extramitochondrial ATP disponibility. Our purpose was to determine the variation in ROS level and its relation with NAD(P)H oxidase sensitive to DPI and CK participation, as factors involved in redox state and energy generation in capacitation. The chlortetracycline technique was used to evaluate capacitation. CK activity and ROS level were measured by spectrophotometry and spectrofluorometry respectively. The capacitation percentage was increased by heparin or quercetin treatment (P level as control (238.62 +/- 23.47 arbitrary units per 10(8) spermatozoa) (P > 0.05). CK activity decreased by 50% with heparin or quercetin (P level variations were observed in heparin- or quercetin-treated samples (P bovine spermatozoa, capacitation requires equilibrium between oxidative damage susceptibility and ROS levels. CK activity is associated with redox state variation and energy sources. In conclusion, capacitation induction depends on NADPH oxidase and the shuttle creatine-creatine phosphate, both sensitive to DPI.

Pulse power applications of silicon diodes in EML capacitive pulsers

Science.gov (United States)

Dethlefsen, Rolf; McNab, Ian; Dobbie, Clyde; Bernhardt, Tom; Puterbaugh, Robert; Levine, Frank; Coradeschi, Tom; Rinaldi, Vito

1993-01-01

Crowbar diodes are used for increasing the energy transfer from capacitive pulse forming networks. They also prevent voltage reversal on the energy storage capacitors. 52 mm diameter diodes with a 5 kV reverse blocking voltage, rated 40 kA were successfully used for the 32 MJ SSG rail gun. An uprated diode with increased current capability and a 15 kV reverse blocking voltage has been developed. Transient thermal analysis has predicted the current ratings for different pulse length. Analysis verification is obtained from destructive testing.

Design and Development of Autonomous High Voltage Driving System for DEAP Actuator in Radiator Thermostat

DEFF Research Database (Denmark)

Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

2014-01-01

In radiator thermostat applications, DEAP (Dielectric Electro Active Polymer) actuator tends to be a good candidate to replace the conventional self-actuating or step motor based actuator due to its intrinsic advantages. The capacitive property and high voltage (HV) driving demand of DEAP actuator...

A variable capacitance based modeling and power capability predicting method for ultracapacitor

Science.gov (United States)

Liu, Chang; Wang, Yujie; Chen, Zonghai; Ling, Qiang

2018-01-01

Methods of accurate modeling and power capability predicting for ultracapacitors are of great significance in management and application of lithium-ion battery/ultracapacitor hybrid energy storage system. To overcome the simulation error coming from constant capacitance model, an improved ultracapacitor model based on variable capacitance is proposed, where the main capacitance varies with voltage according to a piecewise linear function. A novel state-of-charge calculation approach is developed accordingly. After that, a multi-constraint power capability prediction is developed for ultracapacitor, in which a Kalman-filter-based state observer is designed for tracking ultracapacitor's real-time behavior. Finally, experimental results verify the proposed methods. The accuracy of the proposed model is verified by terminal voltage simulating results under different temperatures, and the effectiveness of the designed observer is proved by various test conditions. Additionally, the power capability prediction results of different time scales and temperatures are compared, to study their effects on ultracapacitor's power capability.

AC Voltage Control of DC/DC Converters Based on Modular Multilevel Converters in Multi-Terminal High-Voltage Direct Current Transmission Systems

Directory of Open Access Journals (Sweden)

Rui Li

2016-12-01

Full Text Available The AC voltage control of a DC/DC converter based on the modular multilevel converter (MMC is considered under normal operation and during a local DC fault. By actively setting the AC voltage according to the two DC voltages of the DC/DC converter, the modulation index can be near unity, and the DC voltage is effectively utilized to output higher AC voltage. This significantly decreases submodule (SM capacitance and conduction losses of the DC/DC converter, yielding reduced capital cost, volume, and higher efficiency. Additionally, the AC voltage is limited in the controllable range of both the MMCs in the DC/DC converter; thus, over-modulation and uncontrolled currents are actively avoided. The AC voltage control of the DC/DC converter during local DC faults, i.e., standby operation, is also proposed, where only the MMC connected on the faulty cable is blocked, while the other MMC remains operational with zero AC voltage output. Thus, the capacitor voltages can be regulated at the rated value and the decrease of the SM capacitor voltages after the blocking of the DC/DC converter is avoided. Moreover, the fault can still be isolated as quickly as the conventional approach, where both MMCs are blocked and the DC/DC converter is not exposed to the risk of overcurrent. The proposed AC voltage control strategy is assessed in a three-terminal high-voltage direct current (HVDC system incorporating a DC/DC converter, and the simulation results confirm its feasibility.

Dimerization of the voltage-sensing phosphatase controls its voltage-sensing and catalytic activity.

Science.gov (United States)

Rayaprolu, Vamseedhar; Royal, Perrine; Stengel, Karen; Sandoz, Guillaume; Kohout, Susy C

2018-05-07

Multimerization is a key characteristic of most voltage-sensing proteins. The main exception was thought to be the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP). In this study, we show that multimerization is also critical for Ci-VSP function. Using coimmunoprecipitation and single-molecule pull-down, we find that Ci-VSP stoichiometry is flexible. It exists as both monomers and dimers, with dimers favored at higher concentrations. We show strong dimerization via the voltage-sensing domain (VSD) and weak dimerization via the phosphatase domain. Using voltage-clamp fluorometry, we also find that VSDs cooperate to lower the voltage dependence of activation, thus favoring the activation of Ci-VSP. Finally, using activity assays, we find that dimerization alters Ci-VSP substrate specificity such that only dimeric Ci-VSP is able to dephosphorylate the 3-phosphate from PI(3,4,5)P 3 or PI(3,4)P 2 Our results indicate that dimerization plays a significant role in Ci-VSP function. © 2018 Rayaprolu et al.

Decrease in the cytosolic NADP+-dependent isocitrate dehydrogenase activity through porcine sperm capacitation.

Science.gov (United States)

Katoh, Yuki; Tamba, Michiko; Matsuda, Manabu; Kikuchi, Kazuhiro; Okamura, Naomichi

2018-02-26

In order to understand the molecular mechanisms involved in the sperm capacitation, we have identified the proteins tyrosine-phosphorylated during the capacitation especially in conjunction with the regulation of the levels of reactive oxygen species (ROS) in sperm. In the present study, the effects of the tyrosine phosphorylation of cytosolic NADP + -dependent isocitrate dehydrogenase (IDPc) on its catalytic activity and on the levels of ROS in sperm have been studied. The tyrosine phosphorylated IDPc showed a significantly lowered enzymatic activity. The immunocytochemical analyses using the highly specific antisera against IDPc revealed that IDPc was mainly localized to the principal piece of the porcine sperm flagellum. As IDPc is one of the major NADPH regenerating enzymes in porcine sperm, it is strongly suggested that the decrease in IDPc activity is involved in the increased levels of ROS, which results in the induction of hyperactivated flagellar movement and capacitation. Copyright © 2018 Elsevier Inc. All rights reserved.

Capacitance-based frequency adjustment of micro piezoelectric vibration generator.

Science.gov (United States)

Mao, Xinhua; He, Qing; Li, Hong; Chu, Dongliang

2014-01-01

Micro piezoelectric vibration generator has a wide application in the field of microelectronics. Its natural frequency is unchanged after being manufactured. However, resonance cannot occur when the natural frequencies of a piezoelectric generator and the source of vibration frequency are not consistent. Output voltage of the piezoelectric generator will sharply decline. It cannot normally supply power for electronic devices. In order to make the natural frequency of the generator approach the frequency of vibration source, the capacitance FM technology is adopted in this paper. Different capacitance FM schemes are designed by different locations of the adjustment layer. The corresponding capacitance FM models have been established. Characteristic and effect of the capacitance FM have been simulated by the FM model. Experimental results show that the natural frequency of the generator could vary from 46.5 Hz to 42.4 Hz when the bypass capacitance value increases from 0 nF to 30 nF. The natural frequency of a piezoelectric vibration generator could be continuously adjusted by this method.

Capacitance-Based Frequency Adjustment of Micro Piezoelectric Vibration Generator

Directory of Open Access Journals (Sweden)

Xinhua Mao

2014-01-01

Full Text Available Micro piezoelectric vibration generator has a wide application in the field of microelectronics. Its natural frequency is unchanged after being manufactured. However, resonance cannot occur when the natural frequencies of a piezoelectric generator and the source of vibration frequency are not consistent. Output voltage of the piezoelectric generator will sharply decline. It cannot normally supply power for electronic devices. In order to make the natural frequency of the generator approach the frequency of vibration source, the capacitance FM technology is adopted in this paper. Different capacitance FM schemes are designed by different locations of the adjustment layer. The corresponding capacitance FM models have been established. Characteristic and effect of the capacitance FM have been simulated by the FM model. Experimental results show that the natural frequency of the generator could vary from 46.5 Hz to 42.4 Hz when the bypass capacitance value increases from 0 nF to 30 nF. The natural frequency of a piezoelectric vibration generator could be continuously adjusted by this method.

Floating electrode microelectromechanical system capacitive switches: A different actuation mechanism

Science.gov (United States)

Papaioannou, G.; Giacomozzi, F.; Papandreou, E.; Margesin, B.

2011-08-01

The paper investigates the actuation mechanism in floating electrode microelectromechanical system capacitive switches. It is demonstrated that in the pull-in state, the device operation turns from voltage to current controlled actuation. The current arises from Poole-Frenkel mechanism in the dielectric film and Fowler-Nordheim in the bridge-floating electrode air gap. The pull-out voltage seems to arise from the abrupt decrease of Fowler-Nordheim electric field intensity. This mechanism seems to be responsible for the very small difference with respect to the pull-in voltage.

Voltage stability in low voltage microgrids in aspects of active and reactive power demand

Directory of Open Access Journals (Sweden)

Parol Mirosław

2016-03-01

Full Text Available Low voltage microgrids are autonomous subsystems, in which generation, storage and power and electrical energy consumption appear. In the paper the main attention has been paid to the voltage stability issue in low voltage microgrid for different variants of its operation. In the introduction a notion of microgrid has been presented, and also the issue of influence of active and reactive power balance on node voltage level has been described. Then description of voltage stability issue has been presented. The conditions of voltage stability and indicators used to determine voltage stability margin in the microgrid have been described. Description of the low voltage test microgrid, as well as research methodology along with definition of considered variants of its operation have been presented further. The results of exemplary calculations carried out for the daily changes in node load of the active and reactive power, i.e. the voltage and the voltage stability margin indexes in nodes have been presented. Furthermore, the changes of voltage stability margin indexes depending on the variant of the microgrid operation have been presented. Summary and formulation of conclusions related to the issue of voltage stability in microgrids have been included at the end of the paper.

Water Desalination Using Capacitive Deionization with Microporous Carbon Electrodes

NARCIS (Netherlands)

Porada, S.; Weinstein, L.; Dash, R.; Wal, van der A.F.; Bryjak, M.; Gogotsi, Y.; Biesheuvel, P.M.

2012-01-01

Capacitive deionization (CDI) is a water desalination technology in which salt ions are removed from brackish water by flowing through a spacer channel with porous electrodes on each side. Upon applying a voltage difference between the two electrodes, cations move to and are accumulated in

The self-assembly of redox active peptides: Synthesis and electrochemical capacitive behavior.

Science.gov (United States)

Piccoli, Julia P; Santos, Adriano; Santos-Filho, Norival A; Lorenzón, Esteban N; Cilli, Eduardo M; Bueno, Paulo R

2016-05-01

The present work reports on the synthesis of a redox-tagged peptide with self-assembling capability aiming applications in electrochemically active capacitive surfaces (associated with the presence of the redox centers) generally useful in electroanalytical applications. Peptide containing ferrocene (fc) molecular (redox) group (Ac-Cys-Ile-Ile-Lys(fc)-Ile-Ile-COOH) was thus synthesized by solid phase peptide synthesis (SPPS). To obtain the electrochemically active capacitive interface, the side chain of the cysteine was covalently bound to the gold electrode (sulfur group) and the side chain of Lys was used to attach the ferrocene in the peptide chain. After obtaining the purified redox-tagged peptide, the self-assembly and redox capability was characterized by cyclic voltammetry (CV) and electrochemical impedance-based capacitance spectroscopy techniques. The obtained results confirmed that the redox-tagged peptide was successfully attached by forming an electroactive self-assembled monolayer onto gold electrode. The design of redox active self-assembly ferrocene-tagged peptide is predictably useful in the development of biosensor devices precisely to detect, in a label-free platform, those biomarkers of clinical relevance. © 2016 Wiley Periodicals, Inc. Biopolymers (Pept Sci) 106: 357-367, 2016. © 2016 Wiley Periodicals, Inc.

Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

Energy Technology Data Exchange (ETDEWEB)

Seyedi, M. A., E-mail: seyedi@usc.edu; Yao, M.; O' Brien, J.; Dapkus, P. D. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Wang, S. Y. [Center for Energy Nanoscience, University of Southern California, Los Angeles, California 90089 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, California 95064, USA and NASA Ames Research Center, Moffett Field, California 94035 (United States)

2013-12-16

We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5 nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

A zero-voltage-switched three-phase interleaved buck converter

Science.gov (United States)

Hsieh, Yao-Ching; Huang, Bing-Siang; Lin, Jing-Yuan; Pham, Phu Hieu; Chen, Po-Hao; Chiu, Huang-Jen

2018-04-01

This paper proposes a three-phase interleaved buck converter which is composed of three identical paralleled buck converters. The proposed solution has three shunt inductors connected between each other of three basic buck conversion units. With the help of the shunt inductors, the MOSFET parasitic capacitances will resonate to achieve zero-voltage-switching. Furthermore, the decreasing rate of the current through the free-wheeling diodes is limited, and therefore, their reverse-recovery losses can be minimised. The active power switches are controlled by interleaved pulse-width modulation signals to reduce the input and output current ripples. Therefore, the filtering capacitances on the input and output sides can be reduced. The power efficiency is measured to be as high as 98% in experiment with a prototype circuit.

Linear variable voltage diode capacitor and adaptive matching networks

NARCIS (Netherlands)

Larson, L.E.; De Vreede, L.C.N.

2006-01-01

An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the first pair of anti-series varactor

Three phase voltage measurements with simple open air sensors

NARCIS (Netherlands)

Heesch, van E.J.M.; Caspers, R.; Gulickx, P.F.M.; Jacobs, G.A.P.; Kersten, W.F.J.; Laan, van der P.C.T.

1991-01-01

A low cost, easy to install high-voltage measuring system is described for open air substations and overhead lines. Based on the Differentiating/Integrating (D/I) principle, three free-standing capacitive pickup electrodes are used to sense the three phase to ground voltages. Apart from the

Capacitor Current Feedback-Based Active Resonance Damping Strategies for Digitally-Controlled Inductive-Capacitive-Inductive-Filtered Grid-Connected Inverters

DEFF Research Database (Denmark)

Lorzadeh, Iman; Askarian Abyaneh, Hossein; Savaghebi, Mehdi

2016-01-01

Inductive-capacitive-inductive (LCL)-type line filters are widely used in grid-connected voltage source inverters (VSIs), since they can provide substantially improved attenuation of switching harmonics in currents injected into the grid with lower cost, weight and power losses than their L......-type counterparts. However, the inclusion of third order LCL network complicates the current control design regarding the system stability issues because of an inherent resonance peak which appears in the open-loop transfer function of the inverter control system near the control stability boundary. To avoid...... passive (resistive) resonance damping solutions, due to their additional power losses, active damping (AD) techniques are often applied with proper control algorithms in order to damp the LCL filter resonance and stabilize the system. Among these techniques, the capacitor current feedback (CCF) AD has...

Adaptive Virtual Impedance Scheme for Selective Compensation of Voltage Unbalance and Harmonics in Microgrids

DEFF Research Database (Denmark)

Savaghebi, Mehdi; Shafiee, Qobad; Vasquez, Juan Carlos

2015-01-01

and current inner control loops in order to fix the filter capacitor voltage and a virtual impedance loop mainly for voltage harmonics and unbalance compensation. The virtual impedance is set by the central secondary controller to mitigate the voltage distortion at sensitive load bus (SLB). Secondary...... controller is connected to a measurement unit to obtain the data of voltage harmonics and unbalance at microgrid SLB and broadcasts the commands for adjusting the virtual impedance of each unit. A general case with a combined voltage harmonic and unbalance distortion is considered. In such a case, voltage...... distortion is mitigated by selective insertion of capacitive virtual impedances for negative sequence of fundamental component as well as positive and negative sequences of main harmonics. The values of virtual capacitances are determined based on the required voltage quality at the load bus; thus...

An impedance bridge measuring the capacitance ratio in the high frequency range up to 1 MHz

International Nuclear Information System (INIS)

Kim, Dan Bee; Lee, Hyung Kew; Kim, Wan-Seop

2017-01-01

This paper describes a 2-terminal-pair impedance bridge, measuring the capacitance ratio in the high frequency range up to 1 MHz. The bridge was configured with two voltage sources and a phase control unit which enabled the bridge balance by synchronizing the voltage sources with an enhanced phase resolution. Without employing the transformers such as inductive voltage divider, injection and detection transformers, etc, the bridge system is quite simple to set up, and the balance procedure is quick and easy. Using this dual-source coaxial bridge, the 1:1 and 10:1 capacitance ratios were measured with 1 pF–1 nF capacitors in the frequency range from 1 kHz to 1 MHz. The measurement values obtained by the dual-source bridge were then compared with reference values measured using a commercial precision capacitance bridge of AH2700A, the Z -matrix method developed by ourselves, and the 4-terminal-pair coaxial bridge by the Czech Metrological Institute. All the measurements agreed within the reference uncertainty range of an order of 10 −6 –10 −5 , proving the bridge ability as a trustworthy tool for measuring the capacitance ratio in the high frequency range. (paper)

Modelling and design of a capacitive touch sensor for urinary tract infection detection at the point-of-care.

Science.gov (United States)

Barbosa, Cátia; Dong, Tao

2014-01-01

Due to great use of touchscreens in mobile telephones and other electronic devices, there has been great evolution in this technology. Its wide applicability makes the touch sensor technology suitable for detection of specific components in urine, responsible for urinary tract infection (UTI). Integration of a touch sensor in a disposable probe tip to be used in UTI detection represents a powerful tool to develop new point-of-care testing (POCT) devices. The simplified structure of an electrodes array touch screen was simulated using the software COMSOL Multiphysics to prove that capacitive based touch screens can be used for detection of UTI. Besides we assumed presence of E.coli, one of the major causes of UTI urine. Results show that global capacitance increases if an E.coli sphere is present near the active electrodes, remaining approximately constant when further apart electrodes are excited. The output simulated voltage varies according to the capacitance value, decreasing when the capacitance is increased.

Coherent charge fluctuations in Josephson junctions and the oscillations of the effective capacitance

International Nuclear Information System (INIS)

Krive, I.V.; Rozhavsky, A.S.

1990-07-01

We predict novel voltage oscillations of the effective capacitance of small Josephson junctions. This macroscopic effect involves coherent charge fluctuations with charge 2e, leading to a period of oscillations, V c = 2e/C, where C is the junction capacitance. The amplitude of the effect decreases with temperature as exp(-π 2 T/ε c ), where ε c = (2e) 2 /C. (author). 6 refs

Inverter-based successive approximation capacitance-to-digital converter

KAUST Repository

Omran, Hesham

2017-03-23

An energy-efficient capacitance-to-digital converter (CDC) is provided that utilizes a capacitance-domain successive approximation (SAR) technique. Unlike SAR analog- to-digital converters (ADCs), analysis shows that for SAR CDCs, the comparator offset voltage will result in signal-dependent and parasitic-dependent conversion errors, which necessitates an op-amp-based implementation. The inverter-based SAR CDC contemplated herein provides robust, energy-efficient, and fast operation. The inverter- based SAR CDC may include a hybrid coarse-fine programmable capacitor array. The design of example embodiments is insensitive to analog references, and thus achieves very low temperature sensitivity without the need for calibration. Moreover, this design achieves improved energy efficiency.

Density of interface states, excess capacitance and series resistance in the metal-insulator-semiconductor (MIS) solar cells

Energy Technology Data Exchange (ETDEWEB)

Altindal, Semsettin; Tataroglu, Adem; Dokme, Ilbilge [Faculty of Arts and Sciences, Physics Department, Gazi University, 06500, Ankara (Turkey)

2005-01-31

Dark and illuminated current-voltage (I-V) characteristics of Al/SiO{sub x}/p-Si metal-insulator-semiconductor (MIS) solar cells were measured at room temperature. In addition to capacitance-voltage (C-V) and conductance-voltage (G-V), characteristics are studied at a wide frequency range of 1kHz-10MHz. The dark I-V characteristics showed non-ideal behavior with an ideal factor of 3.2. The density of interface states distribution profiles as a function of (E{sub ss}-E{sub v}) deduced from the I-V measurements at room temperature for the MIS solar cells on the order of 10{sup 13}cm{sup -2}eV{sup -1}. These interface states were responsible for the non-ideal behavior of I-V, C-V and G-V characteristics. Frequency dispersion in capacitance for MIS solar cells can be interpreted only in terms of interface states. The interface states can follow the a.c. signal and yield an excess capacitance, which depends on the relaxation time of interface states and the frequency of the a.c. signal. It was observed that the excess capacitance C{sub o} caused by an interface state decreases with an increase of frequency. The capacitances characteristics of MIS solar cells are affected not only in interface states but also series resistance. Analysis of this data indicated that the high interface states and series resistance leads to lower values of open-circuit voltage, short-circuit current density, and fill factor. Experimental results show that the location of interface states and series resistance have a significant effect on I-V, C-V and G-V characteristics.

Quantum decrease of capacitance in a nanometer-sized tunnel junction

Science.gov (United States)

Untiedt, C.; Saenz, G.; Olivera, B.; Corso, M.; Sabater, C.; Pascual, J. I.

2013-03-01

We have studied the capacitance of the tunnel junction defined by the tip and sample of a Scanning Tunnelling Microscope through the measurement of the electrostatic forces and impedance of the junction. A decrease of the capacitance when a tunnel current is present has shown to be a more general phenomenon as previously reported in other systems. On another hand, an unexpected reduction of the capacitance is also observed when increasing the applied voltage above the work function energy of the electrodes to the Field Emission (FE) regime, and the decrease of capacitance due to a single FE-Resonance has been characterized. All these effects should be considered when doing measurements of the electronic characteristics of nanometer-sized electronic devices and have been neglected up to date. Spanish government (FIS2010-21883-C02-01, CONSOLIDER CSD2007-0010), Comunidad Valenciana (ACOMP/2012/127 and PROMETEO/2012/011)

Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects.

Science.gov (United States)

Aghamohammadi, Mahdieh; Rödel, Reinhold; Zschieschang, Ute; Ocal, Carmen; Boschker, Hans; Weitz, R Thomas; Barrena, Esther; Klauk, Hagen

2015-10-21

The mechanisms behind the threshold-voltage shift in organic transistors due to functionalizing of the gate dielectric with self-assembled monolayers (SAMs) are still under debate. We address the mechanisms by which SAMs determine the threshold voltage, by analyzing whether the threshold voltage depends on the gate-dielectric capacitance. We have investigated transistors based on five oxide thicknesses and two SAMs with rather diverse chemical properties, using the benchmark organic semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene. Unlike several previous studies, we have found that the dependence of the threshold voltage on the gate-dielectric capacitance is completely different for the two SAMs. In transistors with an alkyl SAM, the threshold voltage does not depend on the gate-dielectric capacitance and is determined mainly by the dipolar character of the SAM, whereas in transistors with a fluoroalkyl SAM the threshold voltages exhibit a linear dependence on the inverse of the gate-dielectric capacitance. Kelvin probe force microscopy measurements indicate this behavior is attributed to an electronic coupling between the fluoroalkyl SAM and the organic semiconductor.

Extended Stable Boundary of LCL-Filtered Grid-Connected Inverter Based on An Improved Grid-Voltage Feedforward Control

DEFF Research Database (Denmark)

Lu, Minghui; Xin, Zhen; Wang, Xiongfei

2016-01-01

should be designed under one-sixth of sampling frequency. However, the low resonance frequency leads to a comparatively large filter inductance or/and capacitance. To extend the stable boundary to the region above fs/6, this paper proposes a novel voltage feedforward scheme for the LCL-filtered inverter....... Theoretical analysis is then provided to validate its feasibility and stability. Compared to other widely used active damping strategies, no extra sensors are needed because the filter capacitor voltage, which is used for voltage feedforward control, is also sampled for phase-locked loop in this paper...

TCAD simulations of High-Voltage-CMOS Pixel structures for the CLIC vertex detector

CERN Document Server

Buckland, Matthew Daniel

2016-01-01

The requirements for precision physics and the experimental conditions at CLIC result in stringent constraints for the vertex detector. Capacitively coupled active pixel sensors with 25 μm pitch implemented in a commercial 180 nm High-Voltage CMOS (HV-CMOS) process are currently under study as a candidate technology for the CLIC vertex detector. Laboratory calibration measurements and beam tests with prototypes are complemented by detailed TCAD and electronic circuit simulations, aiming for a comprehensive understanding of the signal formation in the HV-CMOS sensors and subsequent readout stages. In this note 2D and 3D TCAD simulation results of the prototype sensor, the Capacitively Coupled Pixel Detector version three (CCPDv3), will be presented. These include the electric field distribution, leakage current, well capacitance, transient response to minimum ionising particles and charge-collection.

Voltage Dependence of a Neuromodulator-Activated Ionic Current123

Science.gov (United States)

2016-01-01

Abstract The neuromodulatory inward current (IMI) generated by crab Cancer borealis stomatogastric ganglion neurons is an inward current whose voltage dependence has been shown to be crucial in the activation of oscillatory activity of the pyloric network of this system. It has been previously shown that IMI loses its voltage dependence in conditions of low extracellular calcium, but that this effect appears to be regulated by intracellular calmodulin. Voltage dependence is only rarely regulated by intracellular signaling mechanisms. Here we address the hypothesis that the voltage dependence of IMI is mediated by intracellular signaling pathways activated by extracellular calcium. We demonstrate that calmodulin inhibitors and a ryanodine antagonist can reduce IMI voltage dependence in normal Ca2+, but that, in conditions of low Ca2+, calmodulin activators do not restore IMI voltage dependence. Further, we show evidence that CaMKII alters IMI voltage dependence. These results suggest that calmodulin is necessary but not sufficient for IMI voltage dependence. We therefore hypothesize that the Ca2+/calmodulin requirement for IMI voltage dependence is due to an active sensing of extracellular calcium by a GPCR family calcium-sensing receptor (CaSR) and that the reduction in IMI voltage dependence by a calmodulin inhibitor is due to CaSR endocytosis. Supporting this, preincubation with an endocytosis inhibitor prevented W7 (N-(6-aminohexyl)-5-chloro-1-naphthalenesulfonamide hydrochloride)-induced loss of IMI voltage dependence, and a CaSR antagonist reduced IMI voltage dependence. Additionally, myosin light chain kinase, which is known to act downstream of the CaSR, seems to play a role in regulating IMI voltage dependence. Finally, a Gβγ-subunit inhibitor also affects IMI voltage dependence, in support of the hypothesis that this process is regulated by a G-protein-coupled CaSR. PMID:27257619

Determination of the cathode fall voltage in fluorescent lamps by measurement of the operating voltage

International Nuclear Information System (INIS)

Hilscher, A.

2002-01-01

A new method for the determination of the cathode fall voltage of fluorescent lamps is shown. The cathode fall voltage can be determined by measurement of the lamp operating voltage at constant lamp wall temperature, constant discharge current and variation of the electrode heating current. Commercial lamps, which do not need to be specially prepared, can be used for the measurement. The results show good correlation to other measurements of the cathode fall voltage at various discharge currents by means of capacitive coupling. The measured values of the cathode fall voltage are used for determining the minimum, target and maximum setting of the sum of the squares of the pin currents of one electrode (the so-called SOS value) as a function of the discharge current in fluorescent lamp dimming. (author)

Capacitance enhancement of polyaniline coated curved-graphene supercapacitors in a redox-active electrolyte

KAUST Repository

Chen, Wei; Baby, Rakhi Raghavan; Alshareef, Husam N.

2013-01-01

We show, for the first time, a redox-active electrolyte in combination with a polyaniline-coated curved graphene active material to achieve significant enhancement in the capacitance (36-92% increase) compared to supercapacitors that lack the redox-active

Capacitance-Voltage Characterization of La2O3 Metal-Oxide-Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods

Science.gov (United States)

Zade, Dariush; Kanda, Takashi; Yamashita, Koji; Kakushima, Kuniyuki; Nohira, Hiroshi; Ahmet, Parhat; Tsutsui, Kazuo; Nishiyama, Akira; Sugii, Nobuyuki; Natori, Kenji; Hattori, Takeo; Iwai, Hiroshi

2011-10-01

We studied InGaAs surface treatment using hexamethyldisilazane (HMDS) vapor or (NH4)2S solution after initial oxide removal by hydrofluoric acid. The effect of each treatment on interface properties of La2O3/In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitor was evaluated. We found that HMDS surface treatment of InGaAs, followed by La2O3 deposition and forming gas annealing reduces the MOS capacitor's interface state density more effectively than (NH4)2S treatment. The comparison of the capacitance-voltage data shows that the HMDS-treated sample reaches a maximum accumulation capacitance of 2.3 µF/cm2 at 1 MHz with roughly 40% less frequency dispersion near accumulation, than the sample treated with (NH4)2S solution. These results suggest that process optimization of HMDS application could lead to further improvement of InGaAs MOS interface, thereby making it a potential routine step for InGaAs surface passivation.

Non-contact current and voltage sensor

Science.gov (United States)

Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

2014-03-25

A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

Energy consumption and constant current operation in membrane capacitive deionization

NARCIS (Netherlands)

Zhao, R.; Biesheuvel, P.M.; Wal, van der A.F.

2012-01-01

Membrane capacitive deionization (MCDI) is a water desalination technology based on applying a cell voltage between two oppositely placed porous electrodes sandwiching a spacer channel that transports the water to be desalinated. In the salt removal step, ions are adsorbed at the carbon–water

Improved detection of electrical activity with a voltage probe based on a voltage-sensing phosphatase.

Science.gov (United States)

Tsutsui, Hidekazu; Jinno, Yuka; Tomita, Akiko; Niino, Yusuke; Yamada, Yoshiyuki; Mikoshiba, Katsuhiko; Miyawaki, Atsushi; Okamura, Yasushi

2013-09-15

  One of the most awaited techniques in modern physiology is the sensitive detection of spatiotemporal electrical activity in a complex network of excitable cells. The use of genetically encoded voltage probes has been expected to enable such analysis. However, in spite of recent progress, existing probes still suffer from low signal amplitude and/or kinetics too slow to detect fast electrical activity. Here, we have developed an improved voltage probe named Mermaid2, which is based on the voltage-sensor domain of the voltage-sensing phosphatase from Ciona intestinalis and Förster energy transfer between a pair of fluorescent proteins. In mammalian cells, Mermaid2 permits ratiometric readouts of fractional changes of more than 50% over a physiologically relevant voltage range with fast kinetics, and it was used to follow a train of action potentials at frequencies of up to 150 Hz. Mermaid2 was also able to detect single action potentials and subthreshold voltage responses in hippocampal neurons in vitro, in addition to cortical electrical activity evoked by sound stimuli in single trials in living mice.

Design and standalone characterisation of a capacitively coupled HV-CMOS sensor chip for the CLIC vertex detector

Science.gov (United States)

Kremastiotis, I.; Ballabriga, R.; Campbell, M.; Dannheim, D.; Fiergolski, A.; Hynds, D.; Kulis, S.; Peric, I.

2017-09-01

The concept of capacitive coupling between sensors and readout chips is under study for the vertex detector at the proposed high-energy CLIC electron positron collider. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is an active High-Voltage CMOS sensor, designed to be capacitively coupled to the CLICpix2 readout chip. The chip is implemented in a commercial 180 nm HV-CMOS process and contains a matrix of 128×128 square pixels with 25μm pitch. First prototypes have been produced with a standard resistivity of ~20 Ωcm for the substrate and tested in standalone mode. The results show a rise time of ~20 ns, charge gain of 190 mV/ke- and ~40 e- RMS noise for a power consumption of 4.8μW/pixel. The main design aspects, as well as standalone measurement results, are presented.

Shunt PWM advanced var compensators based on voltage source inverters for Facts applications

Energy Technology Data Exchange (ETDEWEB)

Barbosa, Pedro G; Misaka, Isamu; Watanabe, Edson H [Universidade Federal, Rio de Janeiro, RJ (Brazil). Coordenacao dos Programas de Pos-graduacao de Engenharia

1994-12-31

Increased attention has been given to improving power system operation. This paper presents modeling, analysis and design of reactive shunt power compensators based on PWM-Voltage Source Inverters (Pulse Width Modulation -Voltage Source Inverters). (Pulse Width Modulation - Voltage Source Inverters). The control algorithm is based on new concepts of instantaneous active and reactive power theory. The objective is to show that with a small capacitor in the side of a 3-phase PWM-VSI it is possible to synthesize a variable reactive (capacitive or inductive) device. Design procedures and experimental results are presented. The feasibility of this method was verified by digital simulations and measurements on a small scale model. (author) 9 refs., 12 figs.

E-beam high voltage switching power supply

Science.gov (United States)

Shimer, Daniel W.; Lange, Arnold C.

1997-01-01

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

E-beam high voltage switching power supply

International Nuclear Information System (INIS)

Shimer, D.W.; Lange, A.C.

1997-01-01

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360 degree/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs

An approach to evaluate capacitance, capacitive reactance and resistance of pivoted pads of a thrust bearing

Science.gov (United States)

Prashad, Har

1992-07-01

A theoretical approach is developed for determining the capacitance and active resistance between the interacting surfaces of pivoted pads and thrust collar, under different conditions of operation. It is shown that resistance and capacitive reactance of a thrust bearing decrease with the number of pads times the values of these parameters for an individual pad, and that capacitance increases with the number of pads times the capacitance of an individual pad. The analysis presented has a potential to diagnose the behavior of pivoted pad thrust bearings with the angle of tilt and the ratio of film thickness at the leading to trailing edge, by determining the variation of capacitance, resistance, and capacitive reactance.

Maximizing the value of gate capacitance in field-effect devices using an organic interface layer

Science.gov (United States)

Kwok, H. L.

2015-12-01

Past research has confirmed the existence of negative capacitance in organics such as tris (8-Hydroxyquinoline) Aluminum (Alq3). This work explored using such an organic interface layer to enhance the channel voltage in the field-effect transistor (FET) thereby lowering the sub-threshold swing. In particular, if the values of the positive and negative gate capacitances are approximately equal, the composite negative capacitance will increase by orders of magnitude. One concern is the upper frequency limit (∼100 Hz) over which negative capacitance has been observed. Nonetheless, this frequency limit can be raised to kHz when the organic layer is subjected to a DC bias.

The Influence of Materials of Electrodes of Sensitized Solar Cells on Their Capacitive and Electrical Characteristics

Science.gov (United States)

Lazarenko, P. I.; Kozyukhin, S. A.; Mokshina, A. I.; Sherchenkov, A. A.; Patrusheva, T. N.; Irgashev, R. A.; Lebedev, E. A.; Kozik, V. V.

2018-05-01

An estimation is made of the internal capacitance of sensitized solar cells (SSCs) manufactured by the method of extraction pyrolysis. The structures under study are characterized by a hysteresis in the current-voltage characteristic obtained in the direct and reverse modes of voltage variation. The investigations of SSCs demonstrate a high inertness of the parameters under connection and disconnection of the light source. The use of a transparent conductive ITO-electrode, manufactured by the extraction pyrolysis, increases the external capacitance of the cell and decelerates the processes of current decay after the light source connection compared to the commercial FTO-electrode. The values of charges, capacitances, and SSC charge conservation efficiencies are calculated and the internal resistance of the SSCs under study is estimated. According to the estimations performed, the specimen with an ITO-layer possesses a capacitance equal to C1 = 1.23·10-3 F, which is by two orders of magnitude higher than that of the specimen with a FTO-layer (C2 = 2.06·10-5 F).

Characterisation of capacitively coupled HV/HR-CMOS sensor chips for the CLIC vertex detector

Science.gov (United States)

Kremastiotis, I.

2017-12-01

The capacitive coupling between an active sensor and a readout ASIC has been considered in the framework of the CLIC vertex detector study. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is a High-Voltage CMOS sensor chip produced in a commercial 180 nm HV-CMOS process for this purpose. The sensor was designed to be connected to the CLICpix2 readout chip. It therefore matches the dimensions of the readout chip, featuring a matrix of 128×128 square pixels with 25μm pitch. The sensor chip has been produced with the standard value for the substrate resistivity (~20 Ωcm) and it has been characterised in standalone testing mode, before receiving and testing capacitively coupled assemblies. The standalone measurement results show a rise time of ~20 ns for a power consumption of 5μW/pixel. Production of the C3PD HV-CMOS sensor chip with higher substrate resistivity wafers (~20, 80, 200 and 1000 Ωcm) is foreseen. The expected benefits of the higher substrate resistivity will be studied using future assemblies with the readout chip.

Characterisation of capacitively coupled HV/HR-CMOS sensor chips for the CLIC vertex detector

CERN Document Server

AUTHOR|(SzGeCERN)756402

2017-01-01

The capacitive coupling between an active sensor and a readout ASIC has been considered in the framework of the CLIC vertex detector study. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is a High-Voltage CMOS sensor chip produced in a commercial 180 nm HV-CMOS process for this purpose. The sensor was designed to be connected to the CLICpix2 readout chip. It therefore matches the dimensions of the readout chip, featuring a matrix of 128 × 128 square pixels with 25 μm pitch. The sensor chip has been produced with the standard value for the substrate resistivity (∼ 20 Ωcm) and it has been characterised in standalone testing mode, before receiving and testing capacitively coupled assemblies. The standalone measurement results show a rise time of ∼ 20 ns for a power consumption of 5 μW/pixel. Production of the C3PD HV-CMOS sensor chip with higher substrate resistivity wafers (∼ 20, 80, 200 and 1000 Ωcm) is foreseen. The expected benefits of the higher substrate resistivity will be studied using...

Opening of K+ channels by capacitive stimulation from silicon chip

Science.gov (United States)

Ulbrich, M. H.; Fromherz, P.

2005-10-01

The development of stable neuroelectronic systems requires a stimulation of nerve cells from semiconductor devices without electrochemical effects at the electrolyte/solid interface and without damage of the cell membrane. The interaction must rely on a reversible opening of voltage-gated ion channels by capacitive coupling. In a proof-of-principle experiment, we demonstrate that Kv1.3 potassium channels expressed in HEK293 cells can be opened from an electrolyte/oxide/silicon (EOS) capacitor. A sufficient strength of electrical coupling is achieved by insulating silicon with a thin film of TiO2 to achieve a high capacitance and by removing NaCl from the electrolyte to enhance the resistance of the cell-chip contact. When a decaying voltage ramp is applied to the EOS capacitor, an outward current through the attached cell membrane is observed that is specific for Kv1.3 channels. An open probability up to fifty percent is estimated by comparison with a numerical simulation of the cell-chip contact.

Extracellular cAMP activates molecular signalling pathways associated with sperm capacitation in bovines.

Science.gov (United States)

Alonso, Carlos Agustín I; Osycka-Salut, Claudia E; Castellano, Luciana; Cesari, Andreína; Di Siervi, Nicolás; Mutto, Adrián; Johannisson, Anders; Morrell, Jane M; Davio, Carlos; Perez-Martinez, Silvina

2017-08-01

Is extracellular cAMP involved in the regulation of signalling pathways in bovine sperm capacitation? Extracellular cAMP induces sperm capacitation through the activation of different signalling pathways that involve phospholipase C (PLC), PKC/ERK1-2 signalling and an increase in sperm Ca2+ levels, as well as soluble AC and cAMP/protein kinase A (PKA) signalling. In order to fertilize the oocyte, ejaculated spermatozoa must undergo a series of changes in the female reproductive tract, known as capacitation. This correlates with a number of membrane and metabolic modifications that include an increased influx of bicarbonate and Ca2+, activation of a soluble adenylyl cyclase (sAC) to produce cAMP, PKA activation, protein tyrosine phosphorylation and the development of hyperactivated motility. We previously reported that cAMP efflux by Multidrug Resistance Protein 4 (MRP4) occurs during sperm capacitation and the pharmacological blockade of this inhibits the process. Moreover, the supplementation of incubation media with cAMP abolishes the inhibition and leads to sperm capacitation, suggesting that extracellular cAMP regulates crucial signalling cascades involved in this process. Bovine sperm were selected by the wool glass column method, and washed by centrifugation in BSA-Free Tyrode's Albumin Lactate Pyruvate (sp-TALP). Pellets were resuspended then diluted for each treatment. For in vitro capacitation, 10 to 15 × 106 SPZ/ml were incubated in 0.3% BSA sp-TALP at 38.5°C for 45 min under different experimental conditions. To evaluate the role of extracellular cAMP on different events associated with sperm capacitation, 10 nM cAMP was added to the incubation medium as well as different inhibitors of enzymes associated with signalling transduction pathways: U73122 (PLC inhibitor, 10 μM), Gö6983 (PKC inhibitor, 10 μM), PD98059 (ERK-1/2 inhibitor, 30 μM), H89 and KT (PKA inhibitors, 50 μM and 100 nM, respectively), KH7 (sAC inhibitor, 10 μM), BAPTA

The Design of Phase-Locked-Loop Circuit for Precision Capacitance Micrometer

Directory of Open Access Journals (Sweden)

Li Shujie

2016-01-01

Full Text Available High precision non-contact micrometer is normally divided into three categories: inductance micrometer, capacitance micrometer and optical interferometer micrometer. The capacitance micrometer is widely used because it has high performance to price ratio. With the improvement of automation level, precision of capacitance micrometer is required higher and higher. Generally, capacitance micrometer consists of the capacitance sensor, capacitance/voltage conversion circuit, and modulation and demodulation circuits. However, due to the existing of resistors, capacitors and other components in the circuit, the phase shift of the carrier signal and the modulated signal might occur. In this case, the specific value of phase shift cannot be determined. Therefore, error caused by the phase shift cannot be eliminated. This will reduce the accuracy of micrometer. In this design, in order to eliminate the impact of the phase shift, the phase-locked-loop (PLL circuit is employed. Through the experiment, the function of tracking the input signal phase and frequency is achieved by the phase-locked-loop circuit. This signal processing method can also be applied to tuber electrical resistance tomography system and other precision measurement circuit.

Fabrication of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) Heterostructures and Study of Current-Voltage, Capacitance-Voltage and Room-Temperature Photoluminescence

Science.gov (United States)

Shah, M. A. H.; Khan, M. K. R.; Tanveer Karim, A. M. M.; Rahman, M. M.; Kamruzzaman, M.

2018-01-01

Heterojunction diodes of n-ZnO/ p-Si (100) and n-ZnO:Al/ p-Si (100) were fabricated by spray pyrolysis technique. X-ray diffraction (XRD), energy dispersive x-ray spectroscopy (EDX), and field emission scanning electron microscopy (FESEM) were used to characterize the as-prepared samples. The XRD pattern indicates the hexagonal wurzite structure of zinc oxide (ZnO) and Al-doped ZnO (AZO) thin films grown on Si (100) substrate. The compositional analysis by EDX indicates the presence of Al in the AZO structure. The FESEM image indicates the smooth and compact surface of the heterostructures. The current-voltage characteristics of the heterojunction confirm the rectifying diode behavior at different temperatures and illumination intensities. For low forward bias voltage, the ideality factors were determined to be 1.24 and 1.38 for un-doped and Al-doped heterostructures at room temperature (RT), respectively, which indicates the good diode characteristics. The capacitance-voltage response of the heterojunctions was studied for different oscillation frequencies. From the 1/ C 2- V plot, the junction built-in potentials were found 0.30 V and 0.40 V for un-doped and Al-doped junctions at RT, respectively. The differences in built-in potential for different heterojunctions indicate the different interface state densities of the junctions. From the RT photoluminescence (PL) spectrum of the n-ZnO/ p-Si (100) heterostructure, an intense main peak at near band edge (NBE) 378 nm (3.28 eV) and weak deep-level emissions (DLE) centered at 436 nm (2.84 eV) and 412 nm (3.00 eV) were observed. The NBE emission is attributed to the radiative recombination of the free and bound excitons and the DLE results from the radiative recombination through deep level defects.

Coordinated Voltage Control of Active Distribution Network

Directory of Open Access Journals (Sweden)

Xie Jiang

2016-01-01

Full Text Available This paper presents a centralized coordinated voltage control method for active distribution network to solve off-limit problem of voltage after incorporation of distributed generation (DG. The proposed method consists of two parts, it coordinated primal-dual interior point method-based voltage regulation schemes of DG reactive powers and capacitors with centralized on-load tap changer (OLTC controlling method which utilizes system’s maximum and minimum voltages, to improve the qualified rate of voltage and reduce the operation numbers of OLTC. The proposed coordination has considered the cost of capacitors. The method is tested using a radial edited IEEE-33 nodes distribution network which is modelled using MATLAB.

Multilevel inverter based class D audio amplifier for capacitive transducers

DEFF Research Database (Denmark)

Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

2014-01-01

The reduced semiconductor voltage stress makes the multilevel inverters especially interesting, when driving capacitive transducers for audio applications. A ± 300 V flying capacitor class D audio amplifier driving a 100 nF load in the midrange region of 0.1-3.5 kHz with Total Harmonic Distortion...

Estimation of carrier mobility at organic semiconductor/insulator interface using an asymmetric capacitive test structure

Directory of Open Access Journals (Sweden)

Rajesh Agarwal

2016-04-01

Full Text Available Mobility of carriers at the organic/insulator interface is crucial to the performance of organic thin film transistors. The present work describes estimation of mobility using admittance measurements performed on an asymmetric capacitive test structure. Besides the advantage of simplicity, it is shown that at low frequencies, the measured capacitance comes from a large area of channel making the capacitance-voltage characteristics insensitive to contact resistances. 2-D numerical simulation and experimental results obtained with Pentacene/Poly(4-vinyphenol system are presented to illustrate the operation and advantages of the proposed technique.

Digital control of a high-voltage (2.5 kV) bidirectional DC-DC converter for driving a dielectric electro active polymer (DEAP) based capacitive actuator

DEFF Research Database (Denmark)

Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.

2014-01-01

This paper presents a digital control technique toachieve valley switching in a bidirectional flyback converterused to drive a dielectric electro active polymer basedincremental actuator. The incremental actuator consists ofthree electrically isolated, mechanically connected capacitiveactuators...... switchingtechnique during both charge and discharge processes, withoutthe need to sense signals on the output high-voltage side.Experimental results verifying the bidirectional operation of asingle high voltage flyback converter are presented, using afilm capacitor as the load. Energy efficiency measurements...

Power consumption, discharge capacitance and light emission as measures for thrust production of dielectric barrier discharge plasma actuators

International Nuclear Information System (INIS)

Kriegseis, J.; Grundmann, S.; Tropea, C.

2011-01-01

A new procedure of determining the time resolved capacitance of a plasma actuator during operation is introduced, representing a simple diagnostic tool that provides insight into the phenomenological behavior of plasma actuators. The procedure is demonstrated by presenting example correlations between consumed electrical energy, size of the plasma region, and the operating voltage. It is shown that the capacitance of a plasma actuator is considerably increased by the presence of the plasma; hence a system that has previously been impedance matched can be considerably de-tuned when varying the operating voltage of the actuator. Such information is fundamental for any attempts to increase the energy efficiency of plasma-actuator systems. A combined analysis of the capacitance, light emission, size of the plasma region, force production, and power consumption is presented.

Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

International Nuclear Information System (INIS)

Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

2014-01-01

The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

New circuits high-voltage pulse generators with inductive-capacitive energy storage

International Nuclear Information System (INIS)

Gordeev, V.S.; Myskov, G.A.

2001-01-01

The paper describes new electric circuits of multi-cascade generators based on stepped lines. The distinction of the presented circuits consists in initial storage of energy in electric and magnetic fields simultaneously. The circuit of each generator,relations of impedances,values of initial current and charge voltages are selected in such a manner that the whole of initially stored energy is concentrated at the generator output as a result of transient wave processes. In ideal case the energy is transferred with 100% efficiency to the resistive load where a rectangular voltage pulse is formed, whose duration is equals to the double electrical length of the individual cascade. At the same time there is realized a several time increase of output voltage as compared to the charge voltage of the generator. The use of the circuits proposed makes it possible to ensure a several time increase (as compared to the selection of the number of cascades) of the generator energy storage, pulse current and output electric power

Measurement of Line-to-Ground Capacitance in Distribution Network Considering Magnetizing Impedance’s Frequency Characteristic

Directory of Open Access Journals (Sweden)

Qing Yang

2017-04-01

Full Text Available Signal injection method (SIM is widely applied to the insulation parameters’ measurement in distribution network for its convenience and safety. It can be divided into two kinds of patterns: injecting a specific frequency signal or several frequencies’ groups, and scanning frequency in a scheduled frequency scope. In order to avoid the disadvantages in related researches, improved signal injection method (ISIM, in which the frequency characteristic of the transformer magnetizing impedance is taken into consideration, is proposed. In addition, optimization for signal injection position has been accomplished, and the corresponding three calculation methods of line-to-ground capacitance has been derived. Calculations are carried out through the vector information (vector calculation method, the amplitude information (amplitude calculation method, the phase information (phase calculation method of voltage and current in signal injecting port, respectively. The line-to-ground capacitance is represented by lumped parameter capacitances in high-voltage simulation test. Eight different sinusoidal signals are injected into zero-sequence circuit, and then line-to-ground capacitance is calculated with the above-mentioned vector calculation method based on the voltage and the current data of the injecting port. The results obtained by the vector calculation method show that ISIM has a wider application frequency range compared with signal injection method with rated parameters (RSIM and SIM. The RSIM is calculated with the rated transformer parameters of magnetizing impedance, and the SIM based on the ideal transformer model, and the relative errors of calculation results of ISIM are smaller than that for other methods in general. The six groups of two-frequency set are chosen in a specific scope which is recommended by vector calculation results. Based on ISIM, the line-to-ground capacitance calculations through the amplitude calculation method and

Principle and Design of a Single-phase Inverter-Based Grounding System for Neutral-to-ground Voltage Compensation in Distribution Networks

DEFF Research Database (Denmark)

Wang, Wen; Yan, Lingjie; Zeng, Xiangjun

2017-01-01

Neutral-to-ground overvoltage may occur in non-effectively grounded power systems because of the distributed parameters asymmetry and resonance between Petersen coil and distributed capacitances. Thus, the constraint of neutral-to-ground voltage is critical for the safety of distribution networks....... In this paper, an active grounding system based on single-phase inverter and its control parameter design method is proposed to achieve this objective. Relationship between its output current and neutral-to-ground voltage is derived to explain the principle of neutral-to-ground voltage compensation. Then...

Review on the science and technology of water desalination by capacitive deionization

NARCIS (Netherlands)

Porada, S.; Zhao, R.; Wal, van der A.; Presser, V.; Biesheuvel, P.M.

2013-01-01

Porous carbon electrodes have significant potential for energy-efficient water desalination using a promising technology called Capacitive Deionization (CDI). In CDI, salt ions are removed from brackish water upon applying an electrical voltage difference between two porous electrodes, in which the

Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure

International Nuclear Information System (INIS)

Harmatha, Ladislav; Ľubica, Stuchlíková; Juraj, Racko; Juraj, Marek; Juraj, Pecháček; Peter, Benko; Michal, Nemec; Juraj, Breza

2014-01-01

Highlights: • Dependences of CV characteristics of the AlGaN/GaN structure on frequency and temperature variations. • Identification of electrical activity of defects by capacitance DLTS. • Simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure. - Abstract: The paper presents the results of capacitance measurements on GaN/AlGaN/GaN Schottky heterostructures grown on an Al 2 O 3 substrate by Low-Pressure Metal–Organic Vapour-Phase Epitaxy (LP-MOVPE). Dependences of the capacitance–voltage (CV) characteristics on the frequency of the measuring signal allow analysing the properties of the 2D electron gas (2DEG) at the AlGaN/GaN heterojunction. Exact location of the hetero-interface below the surface (20 nm) was determined from the concentration profile. Temperature variations of the CV curves reveal the influence of bulk defects in GaN and of the traps at the AlGaN/GaN interface. Electrical activity of these defects was characterized by capacitance Deep Level Transient Fourier Spectroscopy (DLTFS). Experimental results of CV measurements were supported by simulating the properties of the GaN/Al 0.2 GaN 0.8 /GaN Schottky heterostructure in dependence on the influence of the concentration of donor-like traps in GaN and of the temperature upon the CV curves

MAGY: An innovative high voltage-low current power supply for gyrotron

International Nuclear Information System (INIS)

Siravo, Ugo; Alex, Juergen; Bader, Michael; Carpita, Mauro; Fasel, Damien; Gavin, Serge; Perez, Albert

2011-01-01

From the electrical point of view, the body and the anode of high power gyrotrons behave as capacitive loads. A highly dynamic power supply is, therefore, hard to achieve. The MAGY concept (Modulator for the Anode of a triode type GYrotron) embodies an innovative solution to manage the capacitive current ensuring a very low ripple on the output voltage. It consists of a series of independent, bi-directional and regulated DC sources. Compared to existing topologies, this solution requires a smaller number of power modules. It avoids internal high frequency modulation and simultaneously offers high resolution of the output voltage and a wide range of operating scenarios.

Graphene-Based Linear Tandem Micro-Supercapacitors with Metal-Free Current Collectors and High-Voltage Output.

Science.gov (United States)

Shi, Xiaoyu; Wu, Zhong-Shuai; Qin, Jieqiong; Zheng, Shuanghao; Wang, Sen; Zhou, Feng; Sun, Chenglin; Bao, Xinhe

2017-11-01

Printable supercapacitors are regarded as a promising class of microscale power source, but are facing challenges derived from conventional sandwich-like geometry. Herein, the printable fabrication of new-type planar graphene-based linear tandem micro-supercapacitors (LTMSs) on diverse substrates with symmetric and asymmetric configuration, high-voltage output, tailored capacitance, and outstanding flexibility is demonstrated. The resulting graphene-based LTMSs consisting of 10 micro-supercapacitors (MSs) present efficient high-voltage output of 8.0 V, suggestive of superior uniformity of the entire integrated device. Meanwhile, LTMSs possess remarkable flexibility without obvious capacitance degradation under different bending states. Moreover, areal capacitance of LTMSs can be sufficiently modulated by incorporating polyaniline-based pseudocapacitive nanosheets into graphene electrodes, showing enhanced capacitance of 7.6 mF cm -2 . To further improve the voltage output and energy density, asymmetric LTMSs are fabricated through controlled printing of linear-patterned graphene as negative electrodes and MnO 2 nanosheets as positive electrodes. Notably, the asymmetric LTMSs from three serially connected MSs are easily extended to 5.4 V, triple voltage output of the single cell (1.8 V), suggestive of the versatile applicability of this technique. Therefore, this work offers numerous opportunities of graphene and analogous nanosheets for one-step scalable fabrication of flexible tandem energy storage devices integrating with printed electronics on same substrate. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Piezoelectric self sensing actuators for high voltage excitation

International Nuclear Information System (INIS)

Grasso, E; Totaro, N; Janocha, H; Naso, D

2013-01-01

Self sensing techniques allow the use of a piezoelectric transducer simultaneously as an actuator and as a sensor. Such techniques are based on knowledge of the transducer behaviour and on measurements of electrical quantities, in particular voltage and charge. Past research work has mainly considered the linear behaviour of piezoelectric transducers, consequently restricting the operating driving voltages to low values. In this work a new self sensing technique is proposed which is able to perform self sensing reconstruction both at low and at high driving voltages. This technique, in fact, makes use of a hysteretic model to describe the nonlinear piezoelectric capacitance necessary for self sensing reconstruction. The capacitance can be measured and identified at the antiresonances of a vibrating structure with a good approximation. After providing a mathematical background to deal with the main aspects of self sensing, this technique is compared theoretically and experimentally to a typical linear one by using an aluminum plate with one bonded self sensing transducer and a positive position feedback (PPF) controller to verify the performance in self sensing based vibration control. (paper)

Integration of piezo-capacitive and piezo-electric nanoweb based pressure sensors for imaging of static and dynamic pressure distribution.

Science.gov (United States)

Jeong, Y J; Oh, T I; Woo, E J; Kim, K J

2017-07-01

Recently, highly flexible and soft pressure distribution imaging sensor is in great demand for tactile sensing, gait analysis, ubiquitous life-care based on activity recognition, and therapeutics. In this study, we integrate the piezo-capacitive and piezo-electric nanowebs with the conductive fabric sheets for detecting static and dynamic pressure distributions on a large sensing area. Electrical impedance tomography (EIT) and electric source imaging are applied for reconstructing pressure distribution images from measured current-voltage data on the boundary of the hybrid fabric sensor. We evaluated the piezo-capacitive nanoweb sensor, piezo-electric nanoweb sensor, and hybrid fabric sensor. The results show the feasibility of static and dynamic pressure distribution imaging from the boundary measurements of the fabric sensors.

Linear electromagnetic excitation of an asymmetric low pressure capacitive discharge with unequal sheath widths

Energy Technology Data Exchange (ETDEWEB)

Lieberman, M. A., E-mail: lieber@eecs.berkeley.edu; Lichtenberg, A. J.; Kawamura, E. [Department of Electrical Engineering and Computer Science, University of California, Berkeley, California 94720-1770 (United States); Chabert, P. [Laboratoire de Physique des Plasmas, CNRS, Ecole Polytechnique, UPMC, Paris XI, Observatoire de Paris, 91128 Palaiseau (France)

2016-01-15

It is well-known that standing waves having radially center-high radio frequency (rf) voltage profiles exist in high frequency capacitive discharges. In this work, we determine the symmetric and antisymmetric radially propagating waves in a cylindrical capacitive discharge that is asymmetrically driven at the lower electrode by an rf voltage source. The discharge is modeled as a uniform bulk plasma which at lower frequencies has a thicker sheath at the smaller area powered electrode and a thinner sheath at the larger area grounded electrode. These are self-consistently determined at a specified density using the Child law to calculate sheath widths and the electron power balance to calculate the rf voltage. The fields and the system resonant frequencies are determined. The center-to-edge voltage ratio on the powered electrode is calculated versus frequency, and central highs are found near the resonances. The results are compared with simulations in a similar geometry using a two-dimensional hybrid fluid-analytical code, giving mainly a reasonable agreement. The analytic model may be useful for finding good operating frequencies for a given discharge geometry and power.

Frequency dependent capacitance and conductance properties of Schottky diode based on rubrene organic semiconductor

International Nuclear Information System (INIS)

Barış, Behzad

2013-01-01

Al/rubrene/p-Si Schottky diode has been fabricated by forming a rubrene layer on p type Si by using the spin coating method. The frequency dependent capacitance–voltage (C–V–f) and conductance–voltage (G–V–f) characteristics of Al/rubrene/p-Si Schottky diyotes has been investigated in the frequency range of 5 kHz–500 kHz at room temperature. The C–V plots show a peak for each frequency. The capacitance of the device decreased with increasing frequency. The decrease in capacitance results from the presence of interface states. The plots of series resistance–voltage (R s −V) gave a peak in the depletion region at all frequencies. The density of interface states (N ss ) and relaxation time (τ) distribution profiles as a function of applied voltage bias have been determined from the C–V and G–V measurements. The values of the N ss and τ have been calculated in the ranges of 8.37×10 11 –4.85×10 11 eV −1 cm −2 and 5.17×10 −6 –1.02×10 −5 s, respectively

Water and chemical savings in cooling towers by using membrane capacitive deionization

NARCIS (Netherlands)

Limpt, van B.; Wal, van der A.

2014-01-01

Membrane capacitive deionization (MCDI) is a water desalination technology based on applying a voltage difference between two oppositely placed porous carbon electrodes. In front of each electrode, an ion exchange membrane is positioned, and between them, a spacer is situated, which transports the

A novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances

International Nuclear Information System (INIS)

Dong Linxi; Chen Jindan; Huo Weihong; Li Yongjie; Sun Lingling; Yan Haixia

2009-01-01

The comb capacitances fabricated by deep reactive ion etching (RIE) process have high aspect ratio which is usually smaller than 30: 1 for the complicated process factors, and the combs are usually not parallel due to the well-known micro-loading effect and other process factors, which restricts the increase of the seismic mass by increasing the thickness of comb to reduce the thermal mechanical noise and the decrease of the gap of the comb capacitances for increasing the sensitive capacitance to reduce the electrical noise. Aiming at the disadvantage of the deep RIE, a novel capacitive micro-accelerometer with grid strip capacitances and sensing gap alterable capacitances is developed. One part of sensing of inertial signal of the micro-accelerometer is by the grid strip capacitances whose overlapping area is variable and which do not have the non-parallel plate's effect caused by the deep RIE process. Another part is by the sensing gap alterable capacitances whose gap between combs can be reduced by the actuators. The designed initial gap of the alterable comb capacitances is relatively large to depress the effect of the maximum aspect ratio (30 : 1) of deep RIE process. The initial gap of the capacitance of the actuator is smaller than the one of the comb capacitances. The difference between the two gaps is the initial gap of the sensitive capacitor. The designed structure depresses greatly the requirement of deep RIE process. The effects of non-parallel combs on the accelerometer are also analyzed. The characteristics of the micro-accelerometer are discussed by field emission microscopy (FEM) tool ANSYS. The tested devices based on slide-film damping effect are fabricated, and the tested quality factor is 514, which shows that grid strip capacitance design can partly improve the resolution and also prove the feasibility of the designed silicon-glass anodically bonding process.

Biasing of Capacitive Micromachined Ultrasonic Transducers.

Science.gov (United States)

Caliano, Giosue; Matrone, Giulia; Savoia, Alessandro Stuart

2017-02-01

Capacitive micromachined ultrasonic transducers (CMUTs) represent an effective alternative to piezoelectric transducers for medical ultrasound imaging applications. They are microelectromechanical devices fabricated using silicon micromachining techniques, developed in the last two decades in many laboratories. The interest for this novel transducer technology relies on its full compatibility with standard integrated circuit technology that makes it possible to integrate on the same chip the transducers and the electronics, thus enabling the realization of extremely low-cost and high-performance devices, including both 1-D or 2-D arrays. Being capacitive transducers, CMUTs require a high bias voltage to be properly operated in pulse-echo imaging applications. The typical bias supply residual ripple of high-quality high-voltage (HV) generators is in the millivolt range, which is comparable with the amplitude of the received echo signals, and it is particularly difficult to minimize. The aim of this paper is to analyze the classical CMUT biasing circuits, highlighting the features of each one, and to propose two novel HV generator architectures optimized for CMUT biasing applications. The first circuit proposed is an ultralow-residual ripple (generator that uses an extremely stable sinusoidal power oscillator topology. The second circuit employs a commercially available integrated step-up converter characterized by a particularly efficient switching topology. The circuit is used to bias the CMUT by charging a buffer capacitor synchronously with the pulsing sequence, thus reducing the impact of the switching noise on the received echo signals. The small area of the circuit (about 1.5 cm 2 ) makes it possible to generate the bias voltage inside the probe, very close to the CMUT, making the proposed solution attractive for portable applications. Measurements and experiments are shown to demonstrate the effectiveness of the new approaches presented.

High-voltage pulsed generator for dynamic fragmentation of rocks.

Science.gov (United States)

Kovalchuk, B M; Kharlov, A V; Vizir, V A; Kumpyak, V V; Zorin, V B; Kiselev, V N

2010-10-01

A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ∼50 ns, current amplitude of ∼6 kA with the 40 Ω active load, and ∼20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

High-voltage pulsed generator for dynamic fragmentation of rocks

Science.gov (United States)

Kovalchuk, B. M.; Kharlov, A. V.; Vizir, V. A.; Kumpyak, V. V.; Zorin, V. B.; Kiselev, V. N.

2010-10-01

A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ˜50 ns, current amplitude of ˜6 kA with the 40 Ω active load, and ˜20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

Detailed Analysis of the Transient Voltage in a JT-60SA PF Coil Circuit

International Nuclear Information System (INIS)

Yamauchi, K.; Shimada, K.; Terakado, T.; Matsukawa, M.; Coletti, R.; Lampasi, A.; Gaio, E.; Coletti, A.; Novello, L.

2013-01-01

A superconducting coil system is actually complicated by the distributed parameters, e.g. the distributed mutual inductance among turns and the distributed capacitance between adjacent conductors. In this paper, such a complicated system was modeled with a reasonably simplified circuit network with lumped parameters. Then, a detailed circuit analysis was conducted to evaluate the possible voltage transient in the coil circuit. As a result, an appropriate (minimum) snubber capacitance for the Switching Network Unit, which is a fast high voltage generation circuit in JT-60SA, was obtained. (fusion engineering)

Reduction of ripple voltage in a dynamitron

International Nuclear Information System (INIS)

Langsdorf, A. Jr.

1982-01-01

We determined that a precise neutralization of the RF ripple voltage on the high-voltage terminal of a Dynamitron has previously been prevented by a nonegligible phase shift of RF currents in the two halves of the approx. 100-kHz class C oscillator tank circuit, which is actually constituted of two slightly unequal high-Q coupled circuits because it has two ground points: the inescapable center-tap-ground in the capacitive legs and a center-tap-ground lead to the induction coil. The latter is needed to prevent damage by flashover transients; equivalent to its removal was the adjusting of RF ground return current to a null by aid of a current transformer on this lead and the suitable adjusting of trimmer capacitance. While the phase shift was thus held to a null, the actual ripple amplitude on the hv terminal was minimized by adjusting additional trimmer capacitances installed in the terminal of the machine. Then p/p 100-kHz ripple at 2-MV dc output was reduced to about 50V and RMS resolution by (p,#betta#) resonance threshold data near 1 MV was about 250 V. The limit to resolution has various causes including mechanical vibrations and unbalanced harmonics of the RF

Cavallo's multiplier for in situ generation of high voltage

Science.gov (United States)

Clayton, S. M.; Ito, T. M.; Ramsey, J. C.; Wei, W.; Blatnik, M. A.; Filippone, B. W.; Seidel, G. M.

2018-05-01

A classic electrostatic induction machine, Cavallo's multiplier, is suggested for in situ production of very high voltage in cryogenic environments. The device is suitable for generating a large electrostatic field under conditions of very small load current. Operation of the Cavallo multiplier is analyzed, with quantitative description in terms of mutual capacitances between electrodes in the system. A demonstration apparatus was constructed, and measured voltages are compared to predictions based on measured capacitances in the system. The simplicity of the Cavallo multiplier makes it amenable to electrostatic analysis using finite element software, and electrode shapes can be optimized to take advantage of a high dielectric strength medium such as liquid helium. A design study is presented for a Cavallo multiplier in a large-scale, cryogenic experiment to measure the neutron electric dipole moment.

Mitigating voltage lead errors of an AC Josephson voltage standard by impedance matching

Science.gov (United States)

Zhao, Dongsheng; van den Brom, Helko E.; Houtzager, Ernest

2017-09-01

A pulse-driven AC Josephson voltage standard (ACJVS) generates calculable AC voltage signals at low temperatures, whereas measurements are performed with a device under test (DUT) at room temperature. The voltage leads cause the output voltage to show deviations that scale with the frequency squared. Error correction mechanisms investigated so far allow the ACJVS to be operational for frequencies up to 100 kHz. In this paper, calculations are presented to deal with these errors in terms of reflected waves. Impedance matching at the source side of the system, which is loaded with a high-impedance DUT, is proposed as an accurate method to mitigate these errors for frequencies up to 1 MHz. Simulations show that the influence of non-ideal component characteristics, such as the tolerance of the matching resistor, the capacitance of the load input impedance, losses in the voltage leads, non-homogeneity in the voltage leads, a non-ideal on-chip connection and inductors between the Josephson junction array and the voltage leads, can be corrected for using the proposed procedures. The results show that an expanded uncertainty of 12 parts in 106 (k  =  2) at 1 MHz and 0.5 part in 106 (k  =  2) at 100 kHz is within reach.

High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric

International Nuclear Information System (INIS)

Xia, D X; Xu, J B

2010-01-01

Spin-coated alumina serving as a gate dielectric in thin film transistors shows interesting dielectric properties for low-voltage applications, despite a moderate capacitance. With Ga singly doped and Ga, Li co-doped ZnO as the active channel layers, typical mobilities of 4.7 cm 2 V -1 s -1 and 2.1 cm 2 V -1 s -1 are achieved, respectively. At a given gate bias, the operation current is much smaller than the previously reported values in low-voltage thin film transistors, primarily relying on the giant-capacitive dielectric. The reported devices combine advantages of high mobility, low power consumption, low cost and ease of fabrication. In addition to the transparent nature of both the dielectric and semiconducting active channels, the superior electrical properties of the devices may provide a new avenue for future transparent electronics. (fast track communication)

Capacitively coupled hybrid pixel assemblies for the CLIC vertex detector

CERN Document Server

AUTHOR|(SzGeCERN)734627; Benoit, Mathieu; Dannheim, Dominik; Dette, Karola; Hynds, Daniel; Kulis, Szymon; Peric, Ivan; Petric, Marko; Redford, Sophie; Sicking, Eva; Valerio, Pierpaolo

2016-01-01

The vertex detector at the proposed CLIC multi-TeV linear e+e- collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120 GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor. Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge

Science.gov (United States)

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge.

Science.gov (United States)

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

Submicrosecond linear pulse transformer for 800 kV voltage with modular low-inductance primary power supply

Energy Technology Data Exchange (ETDEWEB)

Bykov, Yu. A.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru; Popov, G. V.; Sedin, A. A.; Feduschak, V. F. [Russian Academy of Sciences, Joint Institute for High Temperatures (Russian Federation)

2016-12-15

A pulsed power source with voltage amplitude up to 800 kV for fast charging (350–400 ns) of the forming line of a high-current nanosecond accelerator is developed. The source includes capacitive energy storage and a linear pulse transformer. The linear transformer consists of a set of 20 inductors with circular ferromagnetic cores surrounded by primary windings inside of which a common stock adder of voltage with film-glycerol insulation is placed. The primary energy storage consists of ten modules, each of which is a low-inductance assembly of two capacitors with a capacitance of 0.35 μF and one gas switch mounted in the same frame. The total energy stored in capacitors is 5.5 kJ at the operating voltage of 40 kV. According to test results, the parameters of the equivalent circuit of the source are the following: shock capacitance = 17.5 nF, inductance = 2 μH, resistance = 3.2 Ω.

Integrated differential high-voltage transmitting circuit for CMUTs

DEFF Research Database (Denmark)

Llimos Muntal, Pere; Larsen, Dennis Øland; Farch, Kjartan

2015-01-01

In this paper an integrated differential high-voltage transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is designed and implemented in a 0.35 μm high-voltage process. Measurements are performed on the integrated circuit in order...... to assess its performance. The circuit generates pulses at differential voltage levels of 60V, 80V and 100 V, a frequency up to 5MHz and a measured driving strength of 1.75 V/ns with the CMUT connected. The total on-chip area occupied by the transmitting circuit is 0.18 mm2 and the power consumption...

Cell voltage versus electrode potential range in aqueous supercapacitors

Science.gov (United States)

Dai, Zengxin; Peng, Chuang; Chae, Jung Hoon; Ng, Kok Chiang; Chen, George Z.

2015-01-01

Supercapacitors with aqueous electrolytes and nanostructured composite electrodes are attractive because of their high charging-discharging speed, long cycle life, low environmental impact and wide commercial affordability. However, the energy capacity of aqueous supercapacitors is limited by the electrochemical window of water. In this paper, a recently reported engineering strategy is further developed and demonstrated to correlate the maximum charging voltage of a supercapacitor with the capacitive potential ranges and the capacitance ratio of the two electrodes. Beyond the maximum charging voltage, a supercapacitor may still operate, but at the expense of a reduced cycle life. In addition, it is shown that the supercapacitor performance is strongly affected by the initial and zero charge potentials of the electrodes. Further, the differences are highlighted and elaborated between freshly prepared, aged under open circuit conditions, and cycled electrodes of composites of conducting polymers and carbon nanotubes. The first voltammetric charging-discharging cycle has an electrode conditioning effect to change the electrodes from their initial potentials to the potential of zero voltage, and reduce the irreversibility. PMID:25897670

Synthesis of sheath voltage drops in asymmetric radio-frequency discharges

International Nuclear Information System (INIS)

Yonemura, Shigeru; Nanbu, Kenichi; Iwata, Naoaki

2004-01-01

A sheath voltage drop in asymmetric discharges is one of the most important parameters of radio-frequency capacitively coupled plasmas because it determines the kinetic energy of the ions incident on the target or substrate. In this study, we developed a numerical simulation code to estimate the sheath voltage drops and, consequently, the self-bias voltage. We roughly approximated general asymmetric rf discharges to one-dimensional spherical ones. The results obtained by using our simulation code are consistent with measurements and Lieberman's theory

Voltage dependence of carbon-based supercapacitors for pseudocapacitance quantification

OpenAIRE

Ruiz Ruiz, Vanesa; Roldán Luna, Silvia; Villar Masetto, Isabel; Blanco Rodríguez, Clara; Santamaría Ramírez, Ricardo

2013-01-01

In order to understand the participation of electrical double layer and pseudocapacitance to the overall behavior of supercapacitors, a new approach to the analysis of the electrochemical data is proposed. Both the variation of the specific capacitance values and the dependence of these values with the operating voltage window (varying from 0–0.2 V to 0–1 V) were evaluated and used to quantify the contribution arising from each mechanism of energy storage to the total capacitance of the syste...

Oxygen- and nitrogen-co-doped activated carbon from waste particleboard for potential application in high-performance capacitance

International Nuclear Information System (INIS)

Shang, Tong-Xin; Ren, Ru-Quan; Zhu, Yue-Mei; Jin, Xiao-Juan

2015-01-01

Graphical abstract: All electrodes showed excellent capacitance and retention versus discharge current density from 0.05 to 5 A/g. - Abstract: Oxygen- and nitrogen-co-doped activated carbons were obtained from phosphoric acid treated nitrogen-doped activated carbons which were prepared from waste particleboard bonded with urea-formaldehyde resin adhesives. The activated carbon samples obtained were tested as supercapacitors in two-electrode cell and extensive wetting 7 M KOH electrolytes. Their structural properties and surface chemistry, before the electrical testing, were investigated using elemental analysis, X-ray photoelectron spectroscopy, scanning electron microscopy, X-ray diffraction, Raman spectra, and adsorption of nitrogen. Activated carbon treated by 4 M phosphoric acid of the highest capacitance (235 F/g) was measured in spite of a relatively lower surface (1360 m 2 /g) than that of the activated carbon treated by 2 M phosphoric acid (1433 m 2 /g). The surface chemistry, and especially oxygen- and nitrogen-containing functional groups, was found of paramount importance for the capacitive behavior and for the effective pore space utilization by the electrolyte ions

Type-1 cannabinoid receptors reduce membrane fluidity of capacitated boar sperm by impairing their activation by bicarbonate.

Directory of Open Access Journals (Sweden)

Barbara Barboni

Full Text Available BACKGROUND: Mammalian spermatozoa acquire their full fertilizing ability (so called capacitation within the female genital tract, where they are progressively exposed to inverse gradients of inhibiting and stimulating molecules. METHODOLOGY/PRINCIPAL FINDINGS: In the present research, the effect on this process of anandamide, an endocannabinoid that can either activate or inhibit cannabinoid receptors depending on its concentration, and bicarbonate, an oviductal activatory molecule, was assessed, in order to study the role exerted by the type 1 cannabinoid receptor (CB1R in the process of lipid membrane remodeling crucial to complete capacitation. To this aim, boar sperm were incubated in vitro under capacitating conditions (stimulated by bicarbonate in the presence or in the absence of methanandamide (Met-AEA, a non-hydrolysable analogue of anandamide. The CB1R involvement was studied by using the specific inhibitor (SR141716 or mimicking its activation by adding a permeable cAMP analogue (8Br-cAMP. By an immunocytochemistry approach it was shown that the Met-AEA inhibits the bicarbonate-dependent translocation of CB1R from the post-equatorial to equatorial region of sperm head. In addition it was found that Met-AEA is able to prevent the bicarbonate-induced increase in membrane disorder and the cholesterol extraction, both preliminary to capacitation, acting through a CB1R-cAMP mediated pathway, as indicated by MC540 and filipin staining, EPR spectroscopy and biochemical analysis on whole membranes (CB1R activity and on membrane enriched fraction (C/P content and anisotropy. CONCLUSIONS/SIGNIFICANCE: Altogether, these data demonstrate that the endocannabinoid system strongly inhibits the process of sperm capacitation, acting as membrane stabilizing agent, thus increasing the basic knowledge on capacitation-related signaling and potentially opening new perspectives in diagnostics and therapeutics of male infertility.

Frequency dependent capacitance and conductance properties of Schottky diode based on rubrene organic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Barış, Behzad, E-mail: behzadbaris@gmail.com

2013-10-01

Al/rubrene/p-Si Schottky diode has been fabricated by forming a rubrene layer on p type Si by using the spin coating method. The frequency dependent capacitance–voltage (C–V–f) and conductance–voltage (G–V–f) characteristics of Al/rubrene/p-Si Schottky diyotes has been investigated in the frequency range of 5 kHz–500 kHz at room temperature. The C–V plots show a peak for each frequency. The capacitance of the device decreased with increasing frequency. The decrease in capacitance results from the presence of interface states. The plots of series resistance–voltage (R{sub s}−V) gave a peak in the depletion region at all frequencies. The density of interface states (N{sub ss}) and relaxation time (τ) distribution profiles as a function of applied voltage bias have been determined from the C–V and G–V measurements. The values of the N{sub ss} and τ have been calculated in the ranges of 8.37×10{sup 11}–4.85×10{sup 11} eV{sup −1} cm{sup −2} and 5.17×10{sup −6}–1.02×10{sup −5} s, respectively.

A dual voltage control strategy for single-phase PWM converters with power decoupling function

DEFF Research Database (Denmark)

Tang, Yi; Qin, Zian; Blaabjerg, Frede

2014-01-01

on a symmetrical half bridge circuit is proposed to decouple the ripple power so that balanced instantaneous power flow is assured between source and load, and the required dc-link capacitance can be dramatically reduced. For proper closed-loop regulation, the small signal modeling of the proposed system...... of voltage control loop because the variation of dc-link voltage should be kept within an acceptable range during load transients. This is particularly important for systems with reduced dc-link capacitance because they are of lower energy capacity and very sensitive to step load changes. Simulation results...

Design, Development and Testing of a Semicircular Type Capacitive Angular Position Sensor

Directory of Open Access Journals (Sweden)

Nikhil GAURAV

2011-06-01

Full Text Available A low cost semicircular type capacitive angular position sensor has been designed, developed and tested. It is made of two semicircular parallel plates where one plate is fixed and another plate is connected with the rotor whose angular position is to be measured. When the angular position of the rotor changes with respect to the fixed plate, the overlapping area between the two plates of the capacitor is varied causing a change in capacitance value. Capacitance variation obtained due to the change in angular position is in the nano farad range. For signal conditioning, series R-L-C resonating circuit instead of conventional bridge circuit has been used to convert the sensor capacitance variation in to voltage. Experimental result shows that the capacitance for change in angular position 0º-180º increases linearly and for 180º-360º it decreases linearly. To get a linearly increasing response of same slope for the full scale of 0º-360º, a suitable linearising circuit has been designed, developed and tested. Sensor output along with the signal conditioning shows good linearity and repeatability.

Nonlinear electrokinetics at large voltages

Energy Technology Data Exchange (ETDEWEB)

Bazant, Martin Z [Department of Chemical Engineering and Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Sabri Kilic, Mustafa; Ajdari, Armand [Department of Mathematics, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Storey, Brian D [Franklin W Olin College of Engineering, Needham, MA 02492 (United States)], E-mail: bazant@mit.edu

2009-07-15

The classical theory of electrokinetic phenomena assumes a dilute solution of point-like ions in chemical equilibrium with a surface whose double-layer voltage is of order the thermal voltage, k{sub B}T/e=25 mV. In nonlinear 'induced-charge' electrokinetic phenomena, such as ac electro-osmosis, several volts {approx}100k{sub B}T/e are applied to the double layer, and the theory breaks down and cannot explain many observed features. We argue that, under such a large voltage, counterions 'condense' near the surface, even for dilute bulk solutions. Based on simple models, we predict that the double-layer capacitance decreases and the electro-osmotic mobility saturates at large voltages, due to steric repulsion and increased viscosity of the condensed layer, respectively. The former suffices to explain observed high-frequency flow reversal in ac electro-osmosis; the latter leads to a salt concentration dependence of induced-charge flows comparable to experiments, although a complete theory is still lacking.

Characterisation by Impedance Spectroscopy and Capacitance-Voltage of an EMIS Sensor Functionalized by Catalase for Nitrite Detection

Directory of Open Access Journals (Sweden)

A. ZAZOUA

2014-05-01

Full Text Available Impedance spectroscopy and capacitance-voltage (C-V methods are a rapidly developing electrochemical technique for the characterization of biomaterial–functionalized electrodes and biocatalytic transformations on the electrodes surface, and specifically for the transduction of biosensing events at electrodes. Such techniques have been used in our work as a tool for the characterization of a new nitrite biosensor for environmental applications based on the immobilization of catalase on insulator-semiconductor (IS systems (p-Si/SiO2/Si3N4. The principle of the developed biosensor includes the following: Catalase catalyzed the breakdown of H2O2 into H2O and O2. Nitrite was selected as an inhibitor of catalase. Under optimal conditions, i.e. buffer capacity corresponding to 3 mM phosphate buffer, the catalase enzyme insulator semiconductor sensors shows a high sensitivity to nitrite detection. In both cases, the responses of these biosensors based on nitrite additions are good with the detection limit around 10-11 M. It is expected that such an original and promising concept of inhibitor-based biosensors based on reactivation by inhibitive effects, will be useful for the development of environmental smart biosensors based on the integration of ENFET with the corresponding instrumentation in the same silicon chip.

Effect of capacitive feedback on the characteristics of direct current superconducting quantum interference device coupled to a multiturn input coil

International Nuclear Information System (INIS)

Minotani, T.; Enpuku, K.; Kuroki, Y.

1997-01-01

Distortion of voltage versus flux (V endash Φ) relation of a dc superconducting quantum interference device (SQUID) coupled to a multiturn input coil is studied. First, resonant behavior of the coupled SQUID due to the so-called input coil resonance is clarified. It is shown that large rf noise flux is produced by the input coil resonance. This rf flux is added to the SQUID, and results in large rf voltage across the SQUID. In the case where parasitic capacitance exists between the input coil and the ground of the SQUID, this rf voltage produces the rf flux again, i.e., a feedback loop for the rf flux is formed. Taking into account this capacitive feedback, we study the V endash Φ relation of the coupled SQUID. Numerical simulation shows that the V endash Φ relation is distorted considerably by the feedback mechanism. The simulation result explains well the experimental V endash Φ relation of the coupled SQUID. The combination of the input coil resonance with the capacitive feedback is the most likely mechanism for the distorted V endash Φ curve of the coupled SQUID. The condition for occurrence of the distorted V endash Φ curve due to the capacitive feedback is also obtained, and methods to prevent degradation are discussed. copyright 1997 American Institute of Physics

Mode transition of power dissipation and plasma parameters in an asymmetric capacitive discharge

International Nuclear Information System (INIS)

Lee, Soo-Jin; Lee, Hyo-Chang; Bang, Jin-young; Oh, Seung-Ju; Chung, Chin-Wook

2013-01-01

Electrical characteristics and plasma parameters were experimentally investigated in asymmetric capacitively coupled plasma with various argon gas pressures. At a low discharge current region, the transferred power to the plasma was proportional to the current, while the transferred power increased proportionally to square of the current at a high discharge current region. The mode transition of power dissipation occurred at the lower discharge current region with the high gas pressure. At the low radio-frequency power or low discharge current, the plasma density increased linearly with the discharge current, while at the high power or high discharge current, the rate of an increase in the plasma density depended on the gas pressures. A transition of the discharge resistance was also found when the mode transition of the power dissipation occurred. These changes in the electrical characteristics and the plasma parameters were mainly caused by the power dissipation mode transition from the plasma bulk to the sheath in the capacitive discharge with the asymmetric electrode, which has extremely high self-bias voltages. - Highlights: • Mode transition of the power dissipation in an asymmetrical capacitive discharge • Evolution of the discharge power, electrode voltage, and discharge impedance • Electron temperature and plasma density on the power dissipation mode transition

A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

Science.gov (United States)

Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

2014-01-01

This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

Diode-Assisted Buck-Boost Voltage-Source Inverters

DEFF Research Database (Denmark)

Gao, Feng; Loh, Poh Chiang; Teodorescu, Remus

2009-01-01

, a number of diode-assisted inverter variants can be designed with each having its own operational principle and voltage gain expression. For controlling them, a generic modulation scheme that can be used for controlling all diode-assisted variants with minimized harmonic distortion and component stress......This paper proposes a number of diode-assisted buck-boost voltage-source inverters with a unique X-shaped diode-capacitor network inserted between the inverter circuitry and dc source for producing a voltage gain that is comparatively higher than those of other buck-boost conversion techniques....... Using the diode-assisted network, the proposed inverters can naturally configure themselves to perform capacitive charging in parallel and discharging in series to give a higher voltage multiplication factor without compromising waveform quality. In addition, by adopting different front-end circuitries...

Measurement of the quantum capacitance from two-dimensional surface state of a topological insulator at room temperature

Energy Technology Data Exchange (ETDEWEB)

Choi, Hyunwoo, E-mail: chw0089@gmail.com [Department of Electrical and Computer Engineering, University of Seoul, Seoul 02504 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02841 (Korea, Republic of); Shin, Changhwan, E-mail: cshin@uos.ac.kr [Department of Electrical and Computer Engineering, University of Seoul, Seoul 02504 (Korea, Republic of)

2017-06-15

Highlights: • The quantum capacitance in topological insulator (TI) at room temperature is directly revealed. • The physical origin of quantum capacitance, the two dimensional surface state of TI, is experimentally validated. • Theoretically calculated results of ideal quantum capacitance can well predict the experimental data. - Abstract: A topological insulator (TI) is a new kind of material that exhibits unique electronic properties owing to its topological surface state (TSS). Previous studies focused on the transport properties of the TSS, since it can be used as the active channel layer in metal-oxide-semiconductor field-effect transistors (MOSFETs). However, a TI with a negative quantum capacitance (QC) effect can be used in the gate stack of MOSFETs, thereby facilitating the creation of ultra-low power electronics. Therefore, it is important to study the physics behind the QC in TIs in the absence of any external magnetic field, at room temperature. We fabricated a simple capacitor structure using a TI (TI-capacitor: Au-TI-SiO{sub 2}-Si), which shows clear evidence of QC at room temperature. In the capacitance-voltage (C-V) measurement, the total capacitance of the TI-capacitor increases in the accumulation regime, since QC is the dominant capacitive component in the series capacitor model (i.e., C{sub T}{sup −1} = C{sub Q}{sup −1} + C{sub SiO2}{sup −1}). Based on the QC model of the two-dimensional electron systems, we quantitatively calculated the QC, and observed that the simulated C-V curve theoretically supports the conclusion that the QC of the TI-capacitor is originated from electron–electron interaction in the two-dimensional surface state of the TI.

Low-Noise Large-Area Photoreceivers with Low Capacitance Photodiodes

Science.gov (United States)

Joshi, Abhay M. (Inventor); Datta, Shubhashish (Inventor)

2013-01-01

A quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.

Capacitance enhancement of polyaniline coated curved-graphene supercapacitors in a redox-active electrolyte

KAUST Repository

Chen, Wei

2013-01-01

We show, for the first time, a redox-active electrolyte in combination with a polyaniline-coated curved graphene active material to achieve significant enhancement in the capacitance (36-92% increase) compared to supercapacitors that lack the redox-active contribution from the electrolyte. The supercapacitors based on the redox-active electrolyte also exhibit excellent rate capability and very long cycling performance (>50 000 cycles). This journal is © The Royal Society of Chemistry.

Number-to-voltage converter on commutated condensers

International Nuclear Information System (INIS)

Grekhov, Yu.N.

1975-01-01

A code-voltage converter using precision voltage dividers based on commutated capacitors [1] is described which is distinguished by the absence of precision elements. Each digit includes eight field-effect transistors in two 1KT682 microcircuit assemblies and three microcapacitors with a conventional unstable capacitance 6200 pF +- 50%. The converter has a speed of response that is not inferior to that of converters based on R-2R matrices, while in time stability of the characteristics, low interference level, and low output impedance it is superior to such converters

SOGI-based capacitor voltage feedback active damping in LCL-filtered grid converters

DEFF Research Database (Denmark)

Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

2015-01-01

The capacitor voltage feedback active damping control is an attractive way to suppress LCL-filter resonance especially for the systems where the capacitor voltage is used for grid synchronization, since no extra sensors are added. The derivative is the core of the capacitor voltage feedback active...... derivative is more suited for capacitor voltage feedback active damping control. Experimental results validate the effectiveness of the proposed method....

Resonant frequency detection and adjustment method for a capacitive transducer with differential transformer bridge

Energy Technology Data Exchange (ETDEWEB)

Hu, M.; Bai, Y. Z., E-mail: abai@mail.hust.edu.cn; Zhou, Z. B., E-mail: zhouzb@mail.hust.edu.cn; Li, Z. X.; Luo, J. [MOE Key Laboratory of Fundamental Physical Quantities Measurement, School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2014-05-15

The capacitive transducer with differential transformer bridge is widely used in ultra-sensitive space accelerometers due to their simple structure and high resolution. In this paper, the front-end electronics of an inductive-capacitive resonant bridge transducer is analyzed. The analysis result shows that the performance of this transducer depends upon the case that the AC pumping frequency operates at the resonance point of the inductive-capacitive bridge. The effect of possible mismatch between the AC pumping frequency and the actual resonant frequency is discussed, and the theoretical analysis indicates that the output voltage noise of the front-end electronics will deteriorate by a factor of about 3 due to either a 5% variation of the AC pumping frequency or a 10% variation of the tuning capacitance. A pre-scanning method to determine the actual resonant frequency is proposed followed by the adjustment of the operating frequency or the change of the tuning capacitance in order to maintain expected high resolution level. An experiment to verify the mismatching effect and the adjustment method is provided.

Resonant frequency detection and adjustment method for a capacitive transducer with differential transformer bridge

International Nuclear Information System (INIS)

Hu, M.; Bai, Y. Z.; Zhou, Z. B.; Li, Z. X.; Luo, J.

2014-01-01

The capacitive transducer with differential transformer bridge is widely used in ultra-sensitive space accelerometers due to their simple structure and high resolution. In this paper, the front-end electronics of an inductive-capacitive resonant bridge transducer is analyzed. The analysis result shows that the performance of this transducer depends upon the case that the AC pumping frequency operates at the resonance point of the inductive-capacitive bridge. The effect of possible mismatch between the AC pumping frequency and the actual resonant frequency is discussed, and the theoretical analysis indicates that the output voltage noise of the front-end electronics will deteriorate by a factor of about 3 due to either a 5% variation of the AC pumping frequency or a 10% variation of the tuning capacitance. A pre-scanning method to determine the actual resonant frequency is proposed followed by the adjustment of the operating frequency or the change of the tuning capacitance in order to maintain expected high resolution level. An experiment to verify the mismatching effect and the adjustment method is provided

Equivalent circuit of frog atrial tissue as determined by voltage clamp-unclamp experiments.

Science.gov (United States)

Tarr, M; Trank, J

1971-11-01

The equivalent circuit that has been used in the analysis of nerve voltage-clamp data is that of the membrane capacity in parallel with the membrane resistance. Voltage-clamp experiments on frog atrial tissue indicate that this circuit will not suffice for this cardiac tissue. The change in membrane current associated with a step change in membrane potential does not show a rapid spike of capacitive current as would be expected for the simple parallel resistance-capacitance network. Rather, there is a step change in current followed by an exponential decay in current with a time constant of about 1 msec. This relatively slow capacitive charging current suggests that there is a resistance in series with the membrane capacity. A possible equivalent circuit is that of a series resistance external to the parallel resistance-capacitance network of the cell membranes. Another possible circuit assumes that the series resistance is an integral part of the cell membrane. The data presented in this paper demonstrate that the equivalent circuit of a bundle of frog atrial muscle is that of an external resistance in series with the cell membranes.

Bio-Inspired Carbon Monoxide Sensors with Voltage-Activated Sensitivity

KAUST Repository

Savagatrup, Suchol

2017-09-27

Carbon monoxide (CO) outcompetes oxygen when binding to the iron center of hemeproteins, leading to a reduction in blood oxygen level and acute poisoning. Harvesting the strong specific interaction between CO and the iron porphyrin provides a highly selective and customizable sensor. We report the development of chemiresistive sensors with voltage-activated sensitivity for the detection of CO comprising iron porphyrin and functionalized single-walled carbon nanotubes (F-SWCNTs). Modulation of the gate voltage offers a predicted extra dimension for sensing. Specifically, the sensors show a significant increase in sensitivity toward CO when negative gate voltage is applied. The dosimetric sensors are selective to ppm levels of CO and functional in air. UV/Vis spectroscopy, differential pulse voltammetry, and density functional theory reveal that the in situ reduction of FeIII to FeII enhances the interaction between the F-SWCNTs and CO. Our results illustrate a new mode of sensors wherein redox active recognition units are voltage-activated to give enhanced and highly specific responses.

The Capacitive Magnetic Field Sensor

Science.gov (United States)

Zyatkov, D. O.; Yurchenko, A. V.; Balashov, V. B.; Yurchenko, V. I.

2016-01-01

The results of a study of sensitive element magnetic field sensor are represented in this paper. The sensor is based on the change of the capacitance with an active dielectric (ferrofluid) due to the magnitude of magnetic field. To prepare the ferrofluid magnetic particles are used, which have a followingdispersion equal to 50 brand 5BDSR. The dependence of the sensitivity of the capacitive element from the ferrofluid with different dispersion of magnetic particles is considered. The threshold of sensitivity and sensitivity of a measuring cell with ferrofluid by a magnetic field was determined. The experimental graphs of capacitance change of the magnitude of magnetic field are presented.

Bidirectional Flyback Converter with Multiple Series Connected Outputs for High Voltage Capacitive Charge and Discharge Applications

DEFF Research Database (Denmark)

Thummala, Prasanth; Schneider, Henrik; Zhang, Zhe

2015-01-01

is limited by the parasitics of the high voltage active components, which also prevent full utilization of valley switching during discharge process. A second implementation is therefore proposed, where the secondary of flyback transformer winding is split into multiple windings which are connected in series...

A Self-Biased Active Voltage Doubler for Energy Harvesting Systems

KAUST Repository

Tayyab, Umais

2017-12-03

An active voltage doubler utilizing a single supply op-amp for energy harvesting system is presented. The proposed doubler is used for rectification process to achieve both acceptably high power conversion efficiency (PCE) and large rectified DC voltage. The incorporated op-amp is self-biased, meaning no external supply is needed but rather it uses part of the harvested energy for its biasing. The proposed active doubler achieves maximum power conversion efficiency (PCE) of 61.7% for a 200 Hz sinusoidal input of 0.8 V for a 20 K load resistor. This efficiency is 2 times more when compared with the passive voltage doubler. The rectified DC voltage is almost 2 times more than conventional passive doubler. The relation between PCE and the load resistor is also presented. The proposed active voltage doubler is designed and simulated in LF 0.15 μm CMOS process technology using Cadence virtuoso tool.

Microwave-assisted ionothermal synthesis of nanostructured anatase titanium dioxide/activated carbon composite as electrode material for capacitive deionization

International Nuclear Information System (INIS)

Liu, Po-I; Chung, Li-Ching; Shao, Hsin; Liang, Teh-Ming; Horng, Ren-Yang; Ma, Chen-Chi M.; Chang, Min-Chao

2013-01-01

The nanostructured anatase titanium dioxide/activated carbon composite material for capacitive deionization electrode was prepared in a short time by a lower temperature two-step microwave-assisted ionothermal (sol–gel method in the presence of ionic liquid) synthesis method. This method includes a reaction and a crystallization step. In the crystallization step, the ionic liquid plays a hydrothermal analogy role in driving the surface anatase crystallization of amorphous titanium dioxide nanoparticles formed in the reaction step. The energy dispersive spectroscopic study of the composite indicates that the anatase titanium dioxide nanoparticles are evenly deposited in the matrix of activated carbon. The electrochemical property of the composite electrode was investigated. In comparison to the pristine activated carbon electrode, higher specific capacitance was observed for the nanostructured anatase titanium dioxide/activated carbon composite electrode, especially when the composite was prepared with a molar ratio of titanium tetraisopropoxide/H 2 O equal to 1:15. Its X-ray photoelectron spectroscopic result indicates that it has the highest amount of Ti-OH. The Ti-OH group can enhance the wetting ability and the specific capacitance of the composite electrode. The accompanying capacitive deionization result indicates that the decay of electrosorption capacity of this composite electrode is insignificant after five cycle tests. It means that the ion electrosorption–desorption becomes a reversible process

Design, construction, and test of a passive optical prototype high voltage instrument transformer

DEFF Research Database (Denmark)

Christensen, Lars Hofmann

1995-01-01

This paper describes an optical voltage transformer (OVT) for a 132-130 kV system based on the Pockels effect in a Bi4Ge3O12 crystal. Different from the majority of OVTs reported, this construction does not use any capacitive voltage division. To accomplish this, it was necessary to redesign the ...

Method of Measuring the Mismatch of Parasitic Capacitance in MEMS Accelerometer Based on Regulating Electrostatic Stiffness

Directory of Open Access Journals (Sweden)

Xianshan Dong

2018-03-01

Full Text Available For the MEMS capacitive accelerometer, parasitic capacitance is a serious problem. Its mismatch will deteriorate the performance of accelerometer. Obtaining the mismatch of the parasitic capacitance precisely is helpful for improving the performance of bias and scale. Currently, the method of measuring the mismatch is limited in the direct measuring using the instrument. This traditional method has low accuracy for it would lead in extra parasitic capacitive and have other problems. This paper presents a novel method based on the mechanism of a closed-loop accelerometer. The strongly linear relationship between the output of electric force and the square of pre-load voltage is obtained through theoretical derivation and validated by experiment. Based on this relationship, the mismatch of parasitic capacitance can be obtained precisely through regulating electrostatic stiffness without other equipment. The results can be applied in the design of decreasing the mismatch and electrical adjusting for eliminating the influence of the mismatch.

A low-voltage high-speed terahertz spatial light modulator using active metamaterial

Directory of Open Access Journals (Sweden)

Saroj Rout

2016-11-01

Full Text Available An all solid-state metamaterial based terahertz (THz spatial light modulator (SLM is presented which uses high mobility 2DEG to manipulate the metamaterial resonant frequency (0.45 THz leading to terahertz wave modulation. The 2DEG is created by embedding pseudomorphic high-electron mobility transistors in the capacitive gap of each electrical-LC resonator, allowing the charge density to be controlled with very low voltage (1 V and modulating speeds up to 10 MHz while consuming sub-milliwatt power. We have demonstrated our SLM as a 2 × 2 pixel array operating around 0.45 THz by raster scanning a 6 × 6 image of an occluded metal object behind a thick polystyrene screen using a single-pixel THz imaging setup.

Capacitive deionization of arsenic-contaminated groundwater in a single-pass mode.

Science.gov (United States)

Fan, Chen-Shiuan; Liou, Sofia Ya Hsuan; Hou, Chia-Hung

2017-10-01

A single-pass-mode capacitive deionization (CDI) reactor was used to remove arsenic from groundwater in the presence of multiple ions. The CDI reactor involved an applied voltage of 1.2 V and six cell pairs of activated carbon electrodes, each of which was 20 × 30 cm 2 . The results indicate that this method achieved an effluent arsenic concentration of 0.03 mg L -1 , which is lower than the arsenic concentration standard for drinking water and irrigation sources in Taiwan, during the charging stage. Additionally, the ability of the CDI to remove other coexisting ions was studied. The presence of other ions has a significant influence on the removal of arsenic from groundwater. From the analysis of the electrosorption selectivity, the preference for anion removal could be ordered as follows: NO 3 -  > SO 4 2-  > F -  > Cl - >As. The electrosorption selectivity for cations could be ordered as follows: Ca 2+  > Mg 2+  > Na +  ∼ K + . Moreover, monovalent cations can be replaced by divalent cations at the electrode surface in the later period of the electrosorption stage. Consequently, activated carbon-based capacitive deionization is demonstrated to be a high-potential technology for remediation of arsenic-contaminated groundwater. Copyright © 2017 Elsevier Ltd. All rights reserved.

Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

Science.gov (United States)

Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

2016-08-10

This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

Directory of Open Access Journals (Sweden)

Wen-Jeng Ho

2016-08-01

Full Text Available This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs and an indium-tin-oxide (ITO electrode with periodic holes (perforations under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

Study and Experiment on Non-Contact Voltage Sensor Suitable for Three-Phase Transmission Line.

Science.gov (United States)

Zhou, Qiang; He, Wei; Xiao, Dongping; Li, Songnong; Zhou, Kongjun

2015-12-30

A voltage transformer, as voltage signal detection equipment, plays an important role in a power system. Presently, more and more electric power systems are adopting potential transformer and capacitance voltage transformers. Transformers are often large in volume and heavyweight, their insulation design is difficult, and an iron core or multi-grade capacitance voltage division structure is generally adopted. As a result, the detection accuracy of transformer is reduced, a huge phase difference exists between detection signal and voltage signal to be measured, and the detection signal cannot accurately and timely reflect the change of conductor voltage signal to be measured. By aiming at the current problems of electric transformation, based on electrostatic induction principle, this paper designed a non-contact voltage sensor and gained detection signal of the sensor through electrostatic coupling for the electric field generated by electric charges of the conductor to be measured. The insulation structure design of the sensor is simple and its volume is small; phase difference of sensor measurement is effectively reduced through optimization design of the electrode; and voltage division ratio and measurement accuracy are increased. The voltage sensor was tested on the experimental platform of simulating three-phase transmission line. According to the result, the designed non-contact voltage sensor can realize accurate and real-time measurement for the conductor voltage. It can be applied to online monitoring for the voltage of three-phase transmission line or three-phase distribution network line, which is in accordance with the development direction of the smart grid.

Primary power supply of repetitive pulsed intense current accelerator charged by capacitance of energy store

International Nuclear Information System (INIS)

Chen Jun; Yang Jianhua; Shu Ting; Zhang Jiande; Zhou Xiang; Wen Jianchun

2008-01-01

The primary power supply of repetitive pulsed intense current accelerator charged by capacitance of energy store is studied. The principle of primary power supply circuit and its time diagram of switches are presented. The circuit is analyzed and some expressions are got, especially, the usable voltage scope of capacitance of energy store, and the correlation between the parameters of circuit and time delay, which is between the turn-on of the charging circuit of capacitance of energy store and the circuit of recuperation. The time delay of 256 x 256 lookup table is made with the instruction of theory and the simulation of the actual parameters of circuits. The table is used by the control program to control the repetitive operating of the actual pulsed intense current accelerator. Finally, some conclusions of the primary power supply of repetitive pulsed intense current accelerator charged by capacitance of energy store are got. (authors)

Field tests of electric survey using capacitive electrodes; Kyapashita denkyoku wo mochiita denki tansarei

Energy Technology Data Exchange (ETDEWEB)

Miyazaki, I; Iseki, S; Kobayashi, T [OYO Corp., Tokyo (Japan)

1997-10-22

This paper describes field test results of electric survey using capacitive electrodes. When two metal plates are approached without contacting with the ground and voltage is applied between the plates, current flows in the ground. The metal plates and the ground work as a capacitor. Charges are stored between them. These metal plates having insulation with the ground are called capacitive electrodes. When ac voltage is applied between a pair of capacitors, current flows continuously in the ground without saturating the capacitors. Resistivity of the ground can be determined by measuring the level of current flowing in the ground and the level of potential. As a result of the field tests, it was found that the present method is superior to the conventional method in around ten times. However, to obtain high quality data, water spraying, reduced towing speed at the low resistivity ground such as clay and soil, and grass mowing are required. 3 refs., 5 figs., 1 tab.

Macroscopic quantum effects in the zero voltage state of the current biased Josephson junction

International Nuclear Information System (INIS)

Clarke, J.; Devoret, M.H.; Martinis, J.; Esteve, D.

1985-05-01

When a weak microwave current is applied to a current-biased Josephson tunnel junction in the thermal limit the escape rate from the zero voltage state is enhanced when the microwave frequency is near the plasma frequency of the junction. The resonance curve is markedly asymmetric because of the anharmonic properties of the potential well: this behavior is well explained by a computer simulation using a resistively shunted junction model. This phenomenon of resonant activation enables one to make in situ measurements of the capacitance and resistance shunting the junction, including contributions from the complex impedance presented by the current leads. For the relatively large area junctions studied in these experiments, the external capacitive loading was relatively unimportant, but the damping was entirely dominated by the external resistance

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

Science.gov (United States)

Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

2017-11-01

A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

Directory of Open Access Journals (Sweden)

Deepak Bansal

2016-01-01

Full Text Available RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

Carbon nanofiber supercapacitors with large areal capacitances

KAUST Repository

McDonough, James R.

2009-01-01

We develop supercapacitor (SC) devices with large per-area capacitances by utilizing three-dimensional (3D) porous substrates. Carbon nanofibers (CNFs) functioning as active SC electrodes are grown on 3D nickel foam. The 3D porous substrates facilitate a mass loading of active electrodes and per-area capacitance as large as 60 mg/ cm2 and 1.2 F/ cm2, respectively. We optimize SC performance by developing an annealing-free CNF growth process that minimizes undesirable nickel carbide formation. Superior per-area capacitances described here suggest that 3D porous substrates are useful in various energy storage devices in which per-area performance is critical. © 2009 American Institute of Physics.

Acrosin release and acrosin activity during incubation in capacitating media using fresh and frozen-thawed dog sperm

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Mónica de los Reyes

2011-01-01

Full Text Available We evaluated the effect of time and temperature on acrosin release from the acrosomal cap and the activity of this enzyme during in vitro capacitation in fresh and frozen/thawed dog sperm. Sperm-rich fractions of six ejaculates from three dogs were processed as fresh and frozen samples. Each sperm sample was incubated in canine capacitation medium (CCM for 0, 1, 2 and 3 h at 20°C and at 37°C. After incubation, the samples were assessed by the indirect immunofluorescent staining technique. The probability of having unlabeled sperm (PUS, indicating acrosin loss, was modelled by a binomial distribution using logistic regression. There was a linear relationship between PUS and time at both temperatures (p<0.001; however, a major percentage of unlabeled sperm was observed in frozen/thawed samples soon after incubation, indicating that the release of acrosin was affected by capacitation time, mainly in frozen samples. Temperature influenced acrosin release only in cryopreserved sperm (p<0.05. Acrosin activity was measured by digestion halos on slides coated with gelatin-substrate film during each time period; a significant increase in the number of large halos was observed in fresh samples throughout the experiment, whereas frozen/thawed sperm showed a decreased rate of halo diameters during culture. Thus, there appears to differences between fresh and frozen dog sperm in terms of acrosin release and the level of acrosin activity in the course of in vitro capacitation.

Cooperative Control with Virtual Selective Harmonic Capacitance for Harmonic Voltage Compensation in Islanded MicroGrids

DEFF Research Database (Denmark)

Micallef, A.; Apap, M.; Spitero-Stanies, C.

2012-01-01

This paper focuses on the islanded operation of microgrids. In this mode of operation, the microsources are required to cooperate autonomously to regulate the local grid voltage and frequency. Droop control is typically used to achieve this autonomous voltage and frequency regulation. Inverters...... having LCL output filters would cause voltage distortion to be present at the PCC of the local load when non-linear current is supplied to the load due to the voltage drop across the grid side inductor. Techniques to reduce the output voltage distortion typically consist of installing either passive...

Suppression of slow capacitance relaxation phenomenon in Pt/Ba0.3Sr0.7TiO3/Pt thin film ferroelectric structures by annealing in oxygen atmosphere

KAUST Repository

Altynnikov, A. G.

2014-01-27

The impact of oxygen annealing on the switching time of ferroelectric thin film capacitor structures Pt/Ba0.3Sr0.7TiO3/Pt was investigated. The response of their capacitance on pulsed control voltages before and after annealing was experimentally measured. It was demonstrated that the annealing results in suppression of the capacitance slow relaxation processes and increase of the threshold control voltages. These structures can therefore be attractive for fabrication of fast acting microwave devices. © 2014 Author(s).

Voltage harmonics mitigation through hybrid active power filer

International Nuclear Information System (INIS)

Sahito, A.A.; Tunio, S.M.; Khizer, A.N.

2016-01-01

Fast dynamic response, high efficiency, low cost and small size of power electronic converters have exponentially increased their use in modern power system which resulted in harmonically distorted voltage and currents. Voltage harmonics mainly caused by current harmonics are more dangerous as performance and expected operating life of other power system equipment are affected by harmonically distorted supply voltage. Electronic filter circuits are used to improve system power quality by mitigating adverse effects of harmonics. Hybrid filters having advantages of both passive and active filters are preferred to resolve the problem of harmonics efficiently and avoiding any chance of resonance. In this paper, a three phase three wire network is considered to supply an adjustable speed drive represented by a resistive load connected across a three phase bridge rectifier. Simulation of the considered system shows THD (Total Harmonic Distortion) of 18.91 and 7.61 percentage in supply current and voltage respectively. A HAPF (Hybrid Active Power Filter) is proposed to reduce these THD values below 5 percentage as recommended by IEEE Standard-519. P-Q theorem is used to calculate required parameters for proposed filter, which is implemented through hysteresis control. Simulation results confirm the effectiveness of the designed filter as THD for both current and voltage have reduced below allowable limit of 5 percentage. (author)

Voltage Harmonics Mitigation through Hybrid Active Power Filter

Directory of Open Access Journals (Sweden)

Anwer Ali Sahito

2016-01-01

Full Text Available Fast dynamic response, high efficiency, low cost and small size of power electronic converters have exponentially increased their use in modern power system which resulted in harmonically distorted voltage and currents. Voltage harmonics mainly caused by current harmonics are more dangerous as performance and expected operating life of other power system equipment are affected by harmonically distorted supply voltage. Electronic filter circuits are used to improve system power quality by mitigating adverse effects of harmonics. Hybrid filters having advantages of both passive and active filters are preferred to resolve the problem of harmonics efficiently and avoiding any chance of resonance. In this paper, a three phase three wire network is considered to supply an adjustable speed drive represented by a resistive load connected across a three phase bridge rectifier. Simulation of the considered system shows THD (Total Harmonic Distortion of 18.91 and 7.61% in supply current and voltage respectively. A HAPF (Hybrid Active Power Filter is proposed to reduce these THD values below 5% as recommended by IEEE Standard-519. P-Q theorem is used to calculate required parameters for proposed filter, which is implemented through hysteresis control. Simulation results confirm the effectiveness of the designed filter as THD for both current and voltage have reduced below allowable limit of 5%.

Voltage-Controlled Square/Triangular Wave Generator with Current Conveyors and Switching Diodes

Directory of Open Access Journals (Sweden)

Martin Janecek

2012-12-01

Full Text Available A novel relaxation oscillator based on integrating the diode-switched currents and Schmitt trigger is presented. It is derived from a known circuit with operational amplifiers where these active elements were replaced by current conveyors. The circuit employs only grounded resistances and capacitance and is suitable for high frequency square and triangular signal generation. Its frequency can be linearly and accurately controlled by voltage that is applied to a high-impedance input. Computer simulation with a model of a manufactured conveyor prototype verifies theoretic assumptions.

Capacitance evolution of electrochemical capacitors with tailored nanoporous electrodes in pure and dissolved ionic liquids

Energy Technology Data Exchange (ETDEWEB)

Mysyk, R.; Raymundo-Pinero, E. [CRMD, CNRS/University, Orleans (France); Ruiz, V.; Santamaria, R. [Instituto Nacional del Carbon (CSIC), Oviedo (Spain); Beguin, F.

2010-10-15

A homologous series of ionic liquids (IL) with 1-alkyl-3-methylimidazolium cations of different lengths of alkyl chain was used to study the effect of cation size on the capacitive response of two carbons with a tailored pore size distribution. The results reveal a clear ion-sieving effect in pure ILs, while the effect is heavily mitigated for the same salts used in solution, most likely due to somewhat stronger geometrical flexibility of dissolved ions. For the electrode material showing the ion-sieving effect in solution, the gravimetric capacitance values are higher than in pure ILs. The dissimilarity of capacitance values between pure and dissolved ILs with ion-sieving carbons highlights their respective advantages and disadvantages in terms of energy density: whereas pure ILs can potentially provide a larger working voltage window, the corresponding dissolved salts can access smaller pores, mostly contributing to higher capacitance values. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

A Capacitance-To-Digital Converter for MEMS Sensors for Smart Applications.

Science.gov (United States)

Pérez Sanjurjo, Javier; Prefasi, Enrique; Buffa, Cesare; Gaggl, Richard

2017-06-07

The use of MEMS sensors has been increasing in recent years. To cover all the applications, many different readout circuits are needed. To reduce the cost and time to market, a generic capacitance-to-digital converter (CDC) seems to be the logical next step. This work presents a configurable CDC designed for capacitive MEMS sensors. The sensor is built with a bridge of MEMS, where some of them function with pressure. Then, the capacitive to digital conversion is realized using two steps. First, a switched-capacitor (SC) preamplifier is used to make the capacitive to voltage (C-V) conversion. Second, a self-oscillated noise-shaping integrating dual-slope (DS) converter is used to digitize this magnitude. The proposed converter uses time instead of amplitude resolution to generate a multibit digital output stream. In addition it performs noise shaping of the quantization error to reduce measurement time. This article shows the effectiveness of this method by measurements performed on a prototype, designed and fabricated using standard 0.13 µm CMOS technology. Experimental measurements show that the CDC achieves a resolution of 17 bits, with an effective area of 0.317 mm², which means a pressure resolution of 1 Pa, while consuming 146 µA from a 1.5 V power supply.

Capacitive-discharge-pumped copper bromide vapour laser

International Nuclear Information System (INIS)

Sukhanov, V B; Fedorov, V F; Troitskii, V O; Gubarev, F A; Evtushenko, Gennadii S

2007-01-01

A copper bromide vapour laser pumped by a high-frequency capacitive discharge is developed. It is shown that, by using of a capacitive discharge, it is possible to built a sealed off metal halide vapour laser of a simple design allowing the addition of active impurities into the working medium. (letters)

Impedance Characteristics Modeling of a Two-Terminal Active Capacitor

DEFF Research Database (Denmark)

Wang, Haoran; Wang, Huai; Lu, Minghui

2017-01-01

to overcome the above issues. In this paper, the modeling of the active capacitor is investigated and a voltage feed-forward compensation scheme is proposed for overshoot reduction. Therefore, the impedance, equivalent capacitance, ESR, and ESL, of the active capacitor can be specified. A case study based...

Large conductance Ca2+-activated K+ (BK channel: Activation by Ca2+ and voltage

Directory of Open Access Journals (Sweden)

RAMÓN LATORRE

2006-01-01

Full Text Available Large conductance Ca2+-activated K+ (BK channels belong to the S4 superfamily of K+ channels that include voltage-dependent K+ (Kv channels characterized by having six (S1-S6 transmembrane domains and a positively charged S4 domain. As Kv channels, BK channels contain a S4 domain, but they have an extra (S0 transmembrane domain that leads to an external NH2-terminus. The BK channel is activated by internal Ca2+, and using chimeric channels and mutagenesis, three distinct Ca2+-dependent regulatory mechanisms with different divalent cation selectivity have been identified in its large COOH-terminus. Two of these putative Ca2+-binding domains activate the BK channel when cytoplasmic Ca2+ reaches micromolar concentrations, and a low Ca2+ affinity mechanism may be involved in the physiological regulation by Mg2+. The presence in the BK channel of multiple Ca2+-binding sites explains the huge Ca2+ concentration range (0.1 μM-100 μM in which the divalent cation influences channel gating. BK channels are also voltage-dependent, and all the experimental evidence points toward the S4 domain as the domain in charge of sensing the voltage. Calcium can open BK channels when all the voltage sensors are in their resting configuration, and voltage is able to activate channels in the complete absence of Ca2+. Therefore, Ca2+ and voltage act independently to enhance channel opening, and this behavior can be explained using a two-tiered allosteric gating mechanism.

Glucose Sensing Using Capacitive Biosensor Based on Polyvinylidene Fluoride Thin Film

Directory of Open Access Journals (Sweden)

Ambran Hartono

2018-01-01

Full Text Available A polyvinylidene fluoride (PVDF film-based capacitive biosensor was developed for glucose sensing. This device consists of a PVDF film sandwiched between two electrodes. A capacitive biosensor measures the dielectric properties of the dielectric layers at the interface between the electrolyte and the electrode. A glucose oxidase (GOx enzyme was immobilized onto the electrode to oxidize glucose. In practice, the biochemical reaction of glucose with the GOx enzyme generates free electron carriers. Consequently, the potential difference between the electrodes is increased, resulting in a measurable voltage output of the biosensor. The device was tested for various glucose concentrations in the range of 0.013 to 5.85 M, and various GOx enzyme concentrations between 4882.8 and 2.5 million units/L. We found that the sensor output increased with increasing glucose concentration up to 5.85 M. These results indicate that the PVDF film-based capacitive biosensors can be properly applied to glucose sensing and provide opportunities for the low-cost fabrication of glucose-based biosensors based on PVDF materials.

Frequency and voltage dependent electrical responses of poly(triarylamine thin film-based organic Schottky diode

Directory of Open Access Journals (Sweden)

Mohamad Khairul Anuar

2017-01-01

Full Text Available A metal-organic-metal (MOM type Schottky diode based on poly (triarylamine (PTAA thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f and capacitance-voltage (C-V-f characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit. Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz but decreases at high frequency (1 – 10 kHz. The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV−1cm−2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC signal.

Modelling of the dual frequency capacitive sheath in the intermediate pressure range

International Nuclear Information System (INIS)

Boyle, P C; Robiche, J; Turner, M M

2004-01-01

The nonlinearity of the plasma sheath in dual frequency capacitively coupled reactors is investigated for frequencies well above the ion plasma frequency. This work focuses on the behaviour of the voltage and the sheath width with respect to the driving current source and the collisionality regime. For typical plasma processing applications, the gas pressure ranges from a few milliTorrs to hundreds of milliTorrs, and the ion dynamics span different collisional regimes. To describe these different ion dynamics, we have used a collisionless model and a variable mobility model. The sheath widths and the voltages obtained from these two models have then been compared

Study on photoelectric parameter measurement method of high capacitance solar cell

Science.gov (United States)

Zhang, Junchao; Xiong, Limin; Meng, Haifeng; He, Yingwei; Cai, Chuan; Zhang, Bifeng; Li, Xiaohui; Wang, Changshi

2018-01-01

The high efficiency solar cells usually have high capacitance characteristic, so the measurement of their photoelectric performance usually requires long pulse width and long sweep time. The effects of irradiance non-uniformity, probe shielding and spectral mismatch on the IV curve measurement are analyzed experimentally. A compensation method for irradiance loss caused by probe shielding is proposed, and the accurate measurement of the irradiance intensity in the IV curve measurement process of solar cell is realized. Based on the characteristics that the open circuit voltage of solar cell is sensitive to the junction temperature, an accurate measurement method of the temperature of solar cell under continuous irradiation condition is proposed. Finally, a measurement method with the characteristic of high accuracy and wide application range for high capacitance solar cell is presented.

Two distinct voltage-sensing domains control voltage sensitivity and kinetics of current activation in CaV1.1 calcium channels.

Science.gov (United States)

Tuluc, Petronel; Benedetti, Bruno; Coste de Bagneaux, Pierre; Grabner, Manfred; Flucher, Bernhard E

2016-06-01

Alternative splicing of the skeletal muscle CaV1.1 voltage-gated calcium channel gives rise to two channel variants with very different gating properties. The currents of both channels activate slowly; however, insertion of exon 29 in the adult splice variant CaV1.1a causes an ∼30-mV right shift in the voltage dependence of activation. Existing evidence suggests that the S3-S4 linker in repeat IV (containing exon 29) regulates voltage sensitivity in this voltage-sensing domain (VSD) by modulating interactions between the adjacent transmembrane segments IVS3 and IVS4. However, activation kinetics are thought to be determined by corresponding structures in repeat I. Here, we use patch-clamp analysis of dysgenic (CaV1.1 null) myotubes reconstituted with CaV1.1 mutants and chimeras to identify the specific roles of these regions in regulating channel gating properties. Using site-directed mutagenesis, we demonstrate that the structure and/or hydrophobicity of the IVS3-S4 linker is critical for regulating voltage sensitivity in the IV VSD, but by itself cannot modulate voltage sensitivity in the I VSD. Swapping sequence domains between the I and the IV VSDs reveals that IVS4 plus the IVS3-S4 linker is sufficient to confer CaV1.1a-like voltage dependence to the I VSD and that the IS3-S4 linker plus IS4 is sufficient to transfer CaV1.1e-like voltage dependence to the IV VSD. Any mismatch of transmembrane helices S3 and S4 from the I and IV VSDs causes a right shift of voltage sensitivity, indicating that regulation of voltage sensitivity by the IVS3-S4 linker requires specific interaction of IVS4 with its corresponding IVS3 segment. In contrast, slow current kinetics are perturbed by any heterologous sequences inserted into the I VSD and cannot be transferred by moving VSD I sequences to VSD IV. Thus, CaV1.1 calcium channels are organized in a modular manner, and control of voltage sensitivity and activation kinetics is accomplished by specific molecular mechanisms

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Energy Technology Data Exchange (ETDEWEB)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

2015-08-24

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

0.5 V and 0.43 pJ/bit Capacitive Sensor Interface for Passive Wireless Sensor Systems.

Science.gov (United States)

Beriain, Andoni; Gutierrez, Iñigo; Solar, Hector; Berenguer, Roc

2015-08-28

This paper presents an ultra low-power and low-voltage pulse-width modulation based ratiometric capacitive sensor interface. The interface was designed and fabricated in a standard 90 nm CMOS 1P9M technology. The measurements show an effective resolution of 10 bits using 0.5 V of supply voltage. The active occupied area is only 0.0045 mm2 and the Figure of Merit (FOM), which takes into account the energy required per conversion bit, is 0.43 pJ/bit. Furthermore, the results show low sensitivity to PVT variations due to the proposed ratiometric architecture. In addition, the sensor interface was connected to a commercial pressure transducer and the measurements of the resulting complete pressure sensor show a FOM of 0.226 pJ/bit with an effective linear resolution of 7.64 bits. The results validate the use of the proposed interface as part of a pressure sensor, and its low-power and low-voltage characteristics make it suitable for wireless sensor networks and low power consumer electronics.

A microfabricated fringing field capacitive pH sensor with an integrated readout circuit

International Nuclear Information System (INIS)

Arefin, Md Shamsul; Redoute, Jean-Michel; Rasit Yuce, Mehmet; Bulut Coskun, M.; Alan, Tuncay; Neild, Adrian

2014-01-01

This work presents a microfabricated fringe-field capacitive pH sensor using interdigitated electrodes and an integrated modulation-based readout circuit. The changes in capacitance of the sensor result from the permittivity changes due to pH variations and are converted to frequency shifts using a crossed-coupled voltage controlled oscillator readout circuit. The shift in resonant frequency of the readout circuit is 30.96 MHz for a change in pH of 1.0–5.0. The sensor can be used for the measurement of low pH levels, such as gastric acid, and can be integrated with electronic pills. The measurement results show high repeatability, low noise, and a stable output.

A microfabricated fringing field capacitive pH sensor with an integrated readout circuit

Energy Technology Data Exchange (ETDEWEB)

Arefin, Md Shamsul, E-mail: md.arefin@monash.edu; Redoute, Jean-Michel; Rasit Yuce, Mehmet [Electrical and Computer Systems Engineering, Monash University, Melbourne (Australia); Bulut Coskun, M.; Alan, Tuncay; Neild, Adrian [Mechanical and Aerospace Engineering, Monash University, Melbourne (Australia)

2014-06-02

This work presents a microfabricated fringe-field capacitive pH sensor using interdigitated electrodes and an integrated modulation-based readout circuit. The changes in capacitance of the sensor result from the permittivity changes due to pH variations and are converted to frequency shifts using a crossed-coupled voltage controlled oscillator readout circuit. The shift in resonant frequency of the readout circuit is 30.96 MHz for a change in pH of 1.0–5.0. The sensor can be used for the measurement of low pH levels, such as gastric acid, and can be integrated with electronic pills. The measurement results show high repeatability, low noise, and a stable output.

False capacitance of supercapacitors

OpenAIRE

Ragoisha, G. A.; Aniskevich, Y. M.

2016-01-01

Capacitance measurements from cyclic voltammetry, galvanostatic chronopotentiometry and calculation of capacitance from imaginary part of impedance are widely used in investigations of supercapacitors. The methods assume the supercapacitor is a capacitor, while real objects correspond to different equivalent electric circuits and show various contributions of non-capacitive currents to the current which is used for calculation of capacitance. Specific capacitances which are presented in F g-1...

Dynamic regulation of mechanosensitive channels: capacitance used to monitor patch tension in real time

Science.gov (United States)

Suchyna, Thomas M.; Besch, Steven R.; Sachs, Frederick

2004-03-01

All cells, from bacteria to human, are mechanically sensitive. The most rapid of these membrane protein transducers are mechanosensitive ion channels, ionic pores in the membrane that open and close in response to membrane tension. In specific sensory organs, these channels serve the senses of touch and hearing, and inform the central nervous system about the filling of hollow organs such as the bladder. Non-specialized cells use these channels to report on changes in cell volume and local strain. To preserve dynamic sensitivity, sensory receptors adapt to steady-state stimuli. Here we show that in rat astrocytes, the most abundant cells in the brain, this apparent adaptation to the stimulus is actually an inactivation. We have been able to track the time course of local strain by measuring attofarad changes in membrane capacitance and show that it is not correlated with loss of channel activity. The reduction in current with time is caused by an increased occupancy of low conductance states, and a reduction in the probability of opening, not a relaxation of local stress. The occupancy of these substates depends on the integrity of the cell's cytoplasm. However, while disruption of the cytoskeleton leads to a loss of inactivation, it leaves activation unaffected. The activation process is voltage-insensitive, closely correlated with changes in capacitance, and seems to arise solely from stress in the bilayer. The inactivation rate decreases with depolarization, and kinetic analysis suggests that the process involves multiple cytoplasmic ligands. Surprisingly, multivalent ions such as Gd+3 and Ca+2 that bind to the lipids and affect channel gating, do not affect the strain-induced increase in membrane capacitance; contrary to expectations, membrane elasticity is unchanged.

Regulation of KV channel voltage-dependent activation by transmembrane β subunits

Directory of Open Access Journals (Sweden)

Xiaohui eSun

2012-04-01

Full Text Available Voltage-activated K+ (KV channels are important for shaping action potentials and maintaining resting membrane potential in excitable cells. KV channels contain a central pore-gate domain (PGD surrounded by four voltage-sensing domains (VSD. The VSDs will change conformation in response to alterations of the membrane potential thereby inducing the opening of the PGD. Many KV channels are heteromeric protein complexes containing auxiliary β subunits. These β subunits modulate channel expression and activity to increase functional diversity and render tissue specific phenotypes. This review focuses on the KV β subunits that contain transmembrane (TM segments including the KCNE family and the β subunits of large conductance, Ca2+- and voltage-activated K+ (BK channels. These TM β subunits affect the voltage-dependent activation of KV α subunits. Experimental and computational studies have described the structural location of these β subunits in the channel complexes and the biophysical effects on VSD activation, PGD opening and VSD-PGD coupling. These results reveal some common characteristics and mechanistic insights into KV channel modulation by TM β subunits.

Triple voltage dc-to-dc converter and method

Science.gov (United States)

Su, Gui-Jia

2008-08-05

A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

Depression of voltage-activated Ca2+ release in skeletal muscle by activation of a voltage-sensing phosphatase.

Science.gov (United States)

Berthier, Christine; Kutchukian, Candice; Bouvard, Clément; Okamura, Yasushi; Jacquemond, Vincent

2015-04-01

Phosphoinositides act as signaling molecules in numerous cellular transduction processes, and phosphatidylinositol 4,5-bisphosphate (PtdIns(4,5)P2) regulates the function of several types of plasma membrane ion channels. We investigated the potential role of PtdIns(4,5)P2 in Ca(2+) homeostasis and excitation-contraction (E-C) coupling of mouse muscle fibers using in vivo expression of the voltage-sensing phosphatases (VSPs) Ciona intestinalis VSP (Ci-VSP) or Danio rerio VSP (Dr-VSP). Confocal images of enhanced green fluorescent protein-tagged Dr-VSP revealed a banded pattern consistent with VSP localization within the transverse tubule membrane. Rhod-2 Ca(2+) transients generated by 0.5-s-long voltage-clamp depolarizing pulses sufficient to elicit Ca(2+) release from the sarcoplasmic reticulum (SR) but below the range at which VSPs are activated were unaffected by the presence of the VSPs. However, in Ci-VSP-expressing fibers challenged by 5-s-long depolarizing pulses, the Ca(2+) level late in the pulse (3 s after initiation) was significantly lower at 120 mV than at 20 mV. Furthermore, Ci-VSP-expressing fibers showed a reversible depression of Ca(2+) release during trains, with the peak Ca(2+) transient being reduced by ∼30% after the application of 10 200-ms-long pulses to 100 mV. A similar depression was observed in Dr-VSP-expressing fibers. Cav1.1 Ca(2+) channel-mediated current was unaffected by Ci-VSP activation. In fibers expressing Ci-VSP and a pleckstrin homology domain fused with monomeric red fluorescent protein (PLCδ1PH-mRFP), depolarizing pulses elicited transient changes in mRFP fluorescence consistent with release of transverse tubule-bound PLCδ1PH domain into the cytosol; the voltage sensitivity of these changes was consistent with that of Ci-VSP activation, and recovery occurred with a time constant in the 10-s range. Our results indicate that the PtdIns(4,5)P2 level is tightly maintained in the transverse tubule membrane of the muscle fibers

A 33fJ/Step SAR Capacitance-to-Digital Converter Using a Chain of Inverter-Based Amplifiers

KAUST Repository

Omran, Hesham

2016-11-16

A 12 - bit energy-efficient capacitive sensor interface circuit that fully relies on capacitance-domain successive approximation (SAR) technique is presented. Analysis shows that for SAR capacitance-to-digital converter (CDC) comparator offset voltage will result in parasitic-dependent conversion errors, which necessitates using an offset cancellation technique. Based on the presented analysis, a SAR CDC that uses a chain of cascode inverter-based amplifiers with near-threshold biasing is proposed to provide robust, energy-efficient, and fast operation. A hybrid coarse-fine capacitive digital-to-analog converter (CapDAC) achieves 11.7 - bit effective resolution, and provides 83% area saving compared to a conventional binary weighted implementation. The prototype fabricated in a 0.18μm CMOS technology is experimentally verified using MEMS capacitive pressure sensor. Experimental results show an energy efficiency figure-of-merit (FoM) of 33 f J/Step which outperforms the state-of-the-art. The CDC output is insensitive to analog references; thus, a very low temperature sensitivity of 2.3 ppm/°C is achieved without the need for calibration.

A 33fJ/Step SAR Capacitance-to-Digital Converter Using a Chain of Inverter-Based Amplifiers

KAUST Repository

Omran, Hesham; Alhoshany, Abdulaziz; Alahmadi, Hamzah; Salama, Khaled N.

2016-01-01

A 12 - bit energy-efficient capacitive sensor interface circuit that fully relies on capacitance-domain successive approximation (SAR) technique is presented. Analysis shows that for SAR capacitance-to-digital converter (CDC) comparator offset voltage will result in parasitic-dependent conversion errors, which necessitates using an offset cancellation technique. Based on the presented analysis, a SAR CDC that uses a chain of cascode inverter-based amplifiers with near-threshold biasing is proposed to provide robust, energy-efficient, and fast operation. A hybrid coarse-fine capacitive digital-to-analog converter (CapDAC) achieves 11.7 - bit effective resolution, and provides 83% area saving compared to a conventional binary weighted implementation. The prototype fabricated in a 0.18μm CMOS technology is experimentally verified using MEMS capacitive pressure sensor. Experimental results show an energy efficiency figure-of-merit (FoM) of 33 f J/Step which outperforms the state-of-the-art. The CDC output is insensitive to analog references; thus, a very low temperature sensitivity of 2.3 ppm/°C is achieved without the need for calibration.

Analytical expressions for noise and crosstalk voltages of the High Energy Silicon Particle Detector

Science.gov (United States)

Yadav, I.; Shrimali, H.; Liberali, V.; Andreazza, A.

2018-01-01

The paper presents design and implementation of a silicon particle detector array with the derived closed form equations of signal-to-noise ratio (SNR) and crosstalk voltages. The noise analysis demonstrates the effect of interpixel capacitances (IPC) between center pixel (where particle hits) and its neighbouring pixels, resulting as a capacitive crosstalk. The pixel array has been designed and simulated in a 180 nm BCD technology of STMicroelectronics. The technology uses the supply voltage (VDD) of 1.8 V and the substrate potential of -50 V. The area of unit pixel is 250×50 μm2 with the substrate resistivity of 125 Ωcm and the depletion depth of 30 μm. The mathematical model includes the effects of various types of noise viz. the shot noise, flicker noise, thermal noise and the capacitive crosstalk. This work compares the results of noise and crosstalk analysis from the proposed mathematical model with the circuit simulation results for a given simulation environment. The results show excellent agreement with the circuit simulations and the mathematical model. The average relative error (AVR) generated for the noise spectral densities with respect to the simulations and the model is 12% whereas the comparison gives the errors of 3% and 11.5% for the crosstalk voltages and the SNR results respectively.

Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3-δ thin films investigated by chemical capacitance measurements.

Science.gov (United States)

Schmid, Alexander; Rupp, Ghislain M; Fleig, Jürgen

2018-05-03

La0.6Sr0.4FeO3-δ (LSF) thin films of different thickness were prepared by pulsed laser deposition on yttria stabilized zirconia (YSZ) and characterized by using three electrode impedance spectroscopy. Electrochemical film capacitance was analyzed in relation to oxygen partial pressure (0.25 mbar to 1 bar), DC polarization (0 m to -600 m) and temperature (500 to 650 °C). For most measurement parameters, the chemical bulk capacitance dominates the overall capacitive properties and the corresponding defect chemical state depends solely on the oxygen chemical potential inside the film, independent of atmospheric oxygen pressure and DC polarization. Thus, defect chemical properties (defect concentrations and defect formation enthalpies) could be deduced from such measurements. Comparison with LSF defect chemical bulk data from the literature showed good agreement for vacancy formation energies but suggested larger electronic defect concentrations in the films. From thickness-dependent measurements at lower oxygen chemical potentials, an additional capacitive contribution could be identified and attributed to the LSF|YSZ interface. Deviations from simple chemical capacitance models at high pressures are most probably due to defect interactions.

Common-mode Voltage Reduction in a Motor Drive System with a Power Factor Correction

DEFF Research Database (Denmark)

Adabi, J.; Boora, A.A.; Zare, F.

2012-01-01

Common-mode voltage generated by a power converter in combination with parasitic capacitive couplings is a potential source of shaft voltage in an AC motor drive system. In this study, a three-phase motor drive system supplied with a single-phase AC-DC diode rectifier is investigated in order...... to reduce shaft voltage in a three-phase AC motor drive system. In this topology, the AC-DC diode rectifier influences the common-mode voltage generated by the inverter because the placement of the neutral point is changing in different rectifier circuit states. A pulse width modulation technique...

Source of sustained voltage difference between the xylem of a potted Ficus benjamina tree and its soil.

Directory of Open Access Journals (Sweden)

Christopher J Love

Full Text Available It has long been known that there is a sustained electrical potential (voltage difference between the xylem of many plants and their surrounding soil, but the mechanism behind this voltage has remained controversial. After eliminating any extraneous capacitive or inductive couplings and ground-mediated electric current flows, we have measured sustained differences of 50-200 mV between the xylem region of a Faraday-caged, intact, potted Ficus benjamina tree and its soil, as well as between its cut branches and soils and ionic solutions standardized to various pH values. Using identical platinum electrodes, no correlation between the voltage and time of day, illumination, sap flow, electrode elevation, or ionic composition of soil was found, suggesting no direct connection to simple dissimilar-metal redox reactions or transpirational activity. Instead, a clear relationship between the voltage polarity and magnitude and the pH difference between xylem and soil was observed. We attribute these sustained voltages to a biological concentration cell likely set up by the homeostatic mechanisms of the tree. Potential applications of this finding are briefly explored.

Low voltage RF MEMS variable capacitor with linear C-V response

KAUST Repository

Elshurafa, Amro M.; Ho, Pak Hung; Salama, Khaled N.

2012-01-01

.2:1 and was achieved at an actuation DC voltage of 8V only. Further, the linear regression coefficient was 0.98. The variable capacitor was created such that it has both vertical and horizontal capacitances present. As the top suspended plate moves towards the bottom

Design of a 300-Watt Isolated Power Supply with Minimized Circuit Input-to-Output Parasitic Capacitance

DEFF Research Database (Denmark)

Nguyen-Duy, Khiem; Petersen, Lars Press; Knott, Arnold

2014-01-01

This paper presents the design of a 300-Watt isolated power supply for MOS gate driver circuit in medium and high voltage applications. The key feature of the developed power supply is having a very low circuit input-to-output parasitic capacitance, thus maximizing its noise immunity. This makes...

Enhanced charge efficiency and reduced energy use in capacitive deionization by increasing the discharge voltage

NARCIS (Netherlands)

Kim, T.; Dykstra, J.E.; Porada, S.; Wal, van der A.; Yoon, J.; Biesheuvel, P.M.

2015-01-01

Capacitive deionization (CDI) is an electrochemical method for water desalination using porous carbon electrodes. A key parameter in CDI is the charge efficiency, ¿, which is the ratio of salt adsorption over charge in a CDI-cycle. Values for ¿ in CDI are typically around 0.5-0.8, significantly less

High-voltage integrated transmitting circuit with differential driving for CMUTs

DEFF Research Database (Denmark)

Llimos Muntal, Pere; Larsen, Dennis Øland; Færch, Kjartan Ullitz

2016-01-01

In this paper, a high-voltage integrated differential transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is presented. Due to its application, area and power consumption are critical and need to be minimized. The circuitry...... is designed and implemented in AMS 0.35 μ m high-voltage process. Measurements are performed on the fabricated integrated circuit in order to assess its performance. The transmitting circuit consists of a low-voltage control logic, pulse-triggered level shifters and a differential output stage that generates...... conditions is 0.936 mW including the load. The integrated circuits measured prove to be consistent and robust to local process variations by measurements....

Featuring of transient tunneling current by voltage pulse and application to an electrochemical biosensor

Science.gov (United States)

Yun, Jun Yeon; Lee, Won Cheol; Choi, Seong Wook; Park, Young June

2018-03-01

We suggest a voltage pulse method for detecting the transient tunneling current component (faradaic current component) in a metal/redox-active monolayer/electrolyte system. After applying the pulse to the metal electrode, the capacitive current prevails; therefore, it is difficult to extract the tunneling current, which carries information on the biochemical reactions occurring between the biomarkers in the electrolyte and the self-assembled monolayer (SAM) as the probe peptide system. Instead of waiting until the capacitive current diminishes, and thereby, the tunneling current also decreases, we try to extract the tunneling current in an early stage of the pulse. The method is based on the observation that the capacitive current becomes symmetrized in the positive and negative pulses after introducing the SAM on the metal electrode. When the energy level of the redox molecule is higher than the Fermi level of the metal under zero-bias condition, the tunneling current in the negative pulse can be extracted by subtracting the capacitive current obtained from the positive pulse, where the tunneling current is neglected. The experiment conducted for detecting trypsin as a biomarker shows that the method enhances the sensitivity and the specific-to-nonspecific ratio of the sensor device in the case of the nonspecific protein-abundant electrolyte solution, as evinced by cyclic voltammetry measurements in comparison.

Optimization Design Method for the CMOS-type Capacitive Micro-Machined Ultrasonic Transducer

Directory of Open Access Journals (Sweden)

D. Y. Chiou

2011-12-01

Full Text Available In this study, an integrated modeling technique for characterization and optimization design of the complementary metal-oxide-semiconductor (CMOS capacitive micro-arrayed ultrasonic transducer (pCMOS-CMUT is presented. Electromechanical finite element simulations are performed to investigate its operational characteristics, such as the collapse voltage and the resonant frequency. Both the numerical and experimental results are in good agreement. In order to simultaneously customize the resonant frequency and minimize the collapse voltage, the genetic algorithm (GA is applied to optimize dimensional parameters of the transducer. From the present results, it is concluded that the FE/GA coupling approach provides another efficient numerical tool for multi-objective design of the pCMOS-CMUT.

Reducing the capacitance of piezoelectric film sensors

Energy Technology Data Exchange (ETDEWEB)

González, Martín G., E-mail: mggonza@fi.uba.ar [Grupo de Láser, Óptica de Materiales y Aplicaciones Electromagnéticas (GLOMAE), Departamento de Física, Facultad de Ingeniería, Universidad de Buenos Aires, Paseo Colón 850, C1063ACV Buenos Aires (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), C1425FQB Buenos Aires (Argentina); Sorichetti, Patricio A.; Santiago, Guillermo D. [Grupo de Láser, Óptica de Materiales y Aplicaciones Electromagnéticas (GLOMAE), Departamento de Física, Facultad de Ingeniería, Universidad de Buenos Aires, Paseo Colón 850, C1063ACV Buenos Aires (Argentina)

2016-04-15

We present a novel design for large area, wideband, polymer piezoelectric sensor with low capacitance. The large area allows better spatial resolution in applications such as photoacoustic tomography and the reduced capacitance eases the design of fast transimpedance amplifiers. The metalized piezoelectric polymer thin film is segmented into N sections, electrically connected in series. In this way, the total capacitance is reduced by a factor 1/N{sup 2}, whereas the mechanical response and the active area of the sensor are not modified. We show the construction details for a two-section sensor, together with the impedance spectroscopy and impulse response experimental results that validate the design.

Reducing the capacitance of piezoelectric film sensors

International Nuclear Information System (INIS)

González, Martín G.; Sorichetti, Patricio A.; Santiago, Guillermo D.

2016-01-01

We present a novel design for large area, wideband, polymer piezoelectric sensor with low capacitance. The large area allows better spatial resolution in applications such as photoacoustic tomography and the reduced capacitance eases the design of fast transimpedance amplifiers. The metalized piezoelectric polymer thin film is segmented into N sections, electrically connected in series. In this way, the total capacitance is reduced by a factor 1/N"2, whereas the mechanical response and the active area of the sensor are not modified. We show the construction details for a two-section sensor, together with the impedance spectroscopy and impulse response experimental results that validate the design.

Technical evaluation of vehicle ignition systems: conduct differences between a high energy capacitive system and a standard inductive system

Directory of Open Access Journals (Sweden)

Bruno Santos Goulart

2014-09-01

Full Text Available An efficient combustion depends on many factors, such as injection, turbulence and ignition characteristics. With the improvement of internal combustion engines the turbulence intensity and internal pressure have risen, demanding more efficient and powerful ignition systems. In direct injection engines, the stratified charge resultant from the wall/air-guided or spray-guided system requires even more energy. The Paschen’s law shows that spark plug gap and mixture density are proportional to the dielectric rupture voltage. It is known that larger spark gaps promote higher efficiency in the internal combustion engines, since the mixture reaction rate rises proportionally. However, the ignition system must be adequate to the imposed gap, not only on energy, but also on voltage and spark duration. For the reported study in this work two test benches were built: a standard inductive ignition system and a capacitive discharge high energy ignition system, with variable voltage and capacitance. The influence of the important parameters energy and ignition voltage on the spark duration, as well as the electrode gap and shape were analyzed. It was also investigated the utilization of a coil with lower resistance and inductance values, as well as spark plugs with and without internal resistances.

116 dB dynamic range CMOS readout circuit for MEMS capacitive accelerometer

International Nuclear Information System (INIS)

Long Shanli; Liu Yan; He Kejun; Tang Xinggang; Chen Qian

2014-01-01

A high stability in-circuit reprogrammable technique control system for a capacitive MEMS accelerometer is presented. Modulation and demodulation are used to separate the signal from the low frequency noise. A low-noise low-offset charge integrator is employed in this circuit to implement a capacitance-to-voltage converter and minimize the noise and offset. The application-specific integrated circuit (ASIC) is fabricated in a 0.5 μm one-ploy three-metal CMOS process. The measured results of the proposed circuit show that the noise floor of the ASIC is −116 dBV, the sensitivity of the accelerometer is 66 mV/g with a nonlinearity of 0.5%. The chip occupies 3.5 × 2.5 mm 2 and the current is 3.5 mA. (semiconductor integrated circuits)

Series asymmetric supercapacitors based on free-standing inner-connection electrodes for high energy density and high output voltage

Science.gov (United States)

Tao, Jiayou; Liu, Nishuang; Rao, Jiangyu; Ding, Longwei; Al Bahrani, Majid Raissan; Li, Luying; Su, Jun; Gao, Yihua

2014-11-01

Asymmetric supercapacitors (ASCs) based on free-standing membranes with high energy density and high output voltage are reported. MnO2 nanowire/carbon nanotube (CNT) composites and MoO3 nanobelt/CNT composites are selected as the anode and the cathode materials of the devices, respectively. The ASC has a high volumetric capacitance of 50.2 F cm-3 at a scan rate of 2 mV s-1 and a high operation voltage window of 2.0 V. Especially, after a middle layer with an inner-connection structure was inserted between the anode and the cathode, the output voltage of the whole device can achieve 4.0 V. The full cell of series ASCs (SASC) with an inner-connection middle layer has a high energy density of 28.6 mW h cm-3 at a power density of 261.4 mW cm-3, and exhibits excellent cycling performance of 99.6% capacitance retention over 10 000 cycles. This strategy of designing the hybridized structure for SASCs provides a promising route for next-generation SCs with high energy density and high output voltage.Asymmetric supercapacitors (ASCs) based on free-standing membranes with high energy density and high output voltage are reported. MnO2 nanowire/carbon nanotube (CNT) composites and MoO3 nanobelt/CNT composites are selected as the anode and the cathode materials of the devices, respectively. The ASC has a high volumetric capacitance of 50.2 F cm-3 at a scan rate of 2 mV s-1 and a high operation voltage window of 2.0 V. Especially, after a middle layer with an inner-connection structure was inserted between the anode and the cathode, the output voltage of the whole device can achieve 4.0 V. The full cell of series ASCs (SASC) with an inner-connection middle layer has a high energy density of 28.6 mW h cm-3 at a power density of 261.4 mW cm-3, and exhibits excellent cycling performance of 99.6% capacitance retention over 10 000 cycles. This strategy of designing the hybridized structure for SASCs provides a promising route for next-generation SCs with high energy density and high

Electrodeposition and Capacitive Behavior of Films for Electrodes of Electrochemical Supercapacitors

Directory of Open Access Journals (Sweden)

Shi C

2010-01-01

Full Text Available Abstract Polypyrrole films were deposited by anodic electropolymerization on stainless steel substrates from aqueous pyrrole solutions containing sodium salicylate and tiron additives. The deposition yield was studied under galvanostatic conditions. The amount of the deposited material was varied by the variation of deposition time at a constant current density. SEM studies showed the formation of porous films with thicknesses in the range of 0–3 μm. Cyclic voltammetry data for the films tested in 0.5 M Na2SO4 solutions showed capacitive behavior and high specific capacitance (SC in a voltage window of 0.9 V. The films prepared from pyrrole solutions containing tiron showed better capacitive behavior compared to the films prepared from the solutions containing sodium salicylate. A highest SC of 254 F g−1 was observed for the sample with a specific mass of 89 μg cm−2 at a scan rate of 2 mV s−1. The SC decreased with an increasing film thickness and scan rate. The results indicated that the polypyrrole films deposited on the stainless steel substrates by anodic electropolymerization can be used as electrodes for electrochemical supercapacitors (ES.

Electrodeposition and Capacitive Behavior of Films for Electrodes of Electrochemical Supercapacitors

Science.gov (United States)

Shi, C.; Zhitomirsky, I.

2010-03-01

Polypyrrole films were deposited by anodic electropolymerization on stainless steel substrates from aqueous pyrrole solutions containing sodium salicylate and tiron additives. The deposition yield was studied under galvanostatic conditions. The amount of the deposited material was varied by the variation of deposition time at a constant current density. SEM studies showed the formation of porous films with thicknesses in the range of 0-3 μm. Cyclic voltammetry data for the films tested in 0.5 M Na2SO4 solutions showed capacitive behavior and high specific capacitance (SC) in a voltage window of 0.9 V. The films prepared from pyrrole solutions containing tiron showed better capacitive behavior compared to the films prepared from the solutions containing sodium salicylate. A highest SC of 254 F g-1 was observed for the sample with a specific mass of 89 μg cm-2 at a scan rate of 2 mV s-1. The SC decreased with an increasing film thickness and scan rate. The results indicated that the polypyrrole films deposited on the stainless steel substrates by anodic electropolymerization can be used as electrodes for electrochemical supercapacitors (ES).

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

Directory of Open Access Journals (Sweden)

Cheng-Yang Lin

2015-11-01

Full Text Available The study investigates the design and fabrication of a micromachined radio frequency (RF capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

A simple capacitance sensor for void fraction measurement in gas-liquid two-phase flow

International Nuclear Information System (INIS)

Silva, Luiz C.R.P.; Faccini, José L.H.; Farias, Marcos S.; Su, Jian

2017-01-01

In this work we present a simple and inexpensive capacitance sensor for time averaging void fraction measurement of gas-liquid two-phase flow, which was developed at Experimental Thermal hydraulics Laboratory in the Nuclear Engineering Institute, IEN/CNEN. The sensor is a non-invasive device causing no flow disturbances. It is formed by two parallel plates and four electronic circuits: a signal input circuit, an amplification circuit, a frequency generator, and a power supply circuit. The frequency generator applies a sinusoidal signal with appropriate frequency into the signal input circuit which converts the capacitance variation value (or void fraction) of the two-phase flow into a voltage signal that goes to the amplifier stage; the output signal of the amplifier stage will be an input to an analogic/digital converter, installed inside of a computer, and it will provide interpretation of the signal behavior. The capacitance sensor was calibrated by using a horizontal acrylic tube filled with a known volume of water. (author)

A simple capacitance sensor for void fraction measurement in gas-liquid two-phase flow

Energy Technology Data Exchange (ETDEWEB)

Silva, Luiz C.R.P.; Faccini, José L.H.; Farias, Marcos S., E-mail: reina@ien.gov.br [Instituto de Engenharia Nuclear (IEN/CNEN-RJ), Rio de Janeiro, RJ (Brazil); Su, Jian, E-mail: sujian@con.ufrj.br [Coordenacao de Pos-Graduacao e Pesquisa de Engenharia (COPPE/UFRJ), Rio de Janeiro, RJ (Brazil). Instituto de Engenharia Nuclear

2017-07-01

In this work we present a simple and inexpensive capacitance sensor for time averaging void fraction measurement of gas-liquid two-phase flow, which was developed at Experimental Thermal hydraulics Laboratory in the Nuclear Engineering Institute, IEN/CNEN. The sensor is a non-invasive device causing no flow disturbances. It is formed by two parallel plates and four electronic circuits: a signal input circuit, an amplification circuit, a frequency generator, and a power supply circuit. The frequency generator applies a sinusoidal signal with appropriate frequency into the signal input circuit which converts the capacitance variation value (or void fraction) of the two-phase flow into a voltage signal that goes to the amplifier stage; the output signal of the amplifier stage will be an input to an analogic/digital converter, installed inside of a computer, and it will provide interpretation of the signal behavior. The capacitance sensor was calibrated by using a horizontal acrylic tube filled with a known volume of water. (author)

Selective Harmonic Virtual Impedance for Voltage Source Inverters with LCL filter in Microgrids

DEFF Research Database (Denmark)

Savaghebi, Mehdi; Vasquez, Juan Carlos; Jalilian, Alireza Jalilian

2012-01-01

This paper presents a new control approach for voltage source inverters ended with LCL filters for microgrid applications. The control approach consists of voltage and current inner control loops in order to fix the filter capacitor voltage and a virtual impedance loop. The virtual impedance...... is added in order to mitigate the voltage distortion after the output inductor and improve the load sharing among parallel inverters. A general case with a combined voltage harmonic and unbalance distortion is considered. In such a case, voltage distortion is mitigated by inserting capacitive virtual...... impedance for negative sequence of fundamental component as well as positive and negative sequences of main harmonic components. Furthermore, resistive virtual impedances are added at these components in order to provide a proper load sharing and make the overall system more damped. Simulation results...

Estimation of Transformer Parameters and Loss Analysis for High Voltage Capacitor Charging Application

DEFF Research Database (Denmark)

Thummala, Prasanth; Schneider, Henrik; Ouyang, Ziwei

2013-01-01

In a bi-directional DC-DC converter for capacitive charging application, the losses associated with the transformer makes it a critical component. In order to calculate the transformer losses, its parameters such as AC resistance, leakage inductance and self capacitance of the high voltage (HV......) winding has to be estimated accurately. This paper analyzes the following losses of bi-directional flyback converter namely switching loss, conduction loss, gate drive loss, transformer core loss, and snubber loss, etc. Iterative analysis of transformer parameters viz., AC resistance, leakage inductance...

Towards a Capacitive Enzyme Sensor for Direct Determination of Organophosphorus Pesticides: Fundamental Studies and Aspects of Development

Directory of Open Access Journals (Sweden)

Ashok Mulchandani

2003-06-01

Full Text Available The realisation of a miniaturised potentiometric enzyme biosensor is presented. The biosensor chip utilises the enzyme organophosphorus hydrolase (OPH for the direct determination of pesticides. The transducer structure of the sensors chip consists of a pH-sensitive capacitive electrolyte-insulator-semiconductor (EIS structure that reacts towards pH changes caused by the OPH-catalised hydrolysis of the organophosphate compounds. The biosensor is operated versus a conventional Ag/AgCl reference electrode. Measurements were performed in the capacitance/voltage (C/V and the constant capacitance (ConCap mode for the two different pesticides paraoxon and parathion. For the development of this new type of biosensor, different immobilisation strategies, influence of buffer composition and concentration, transducer material, detection limit, long-term stability and selectivity have been studied.

Capacitance and conductance characterization of nano-ZnGa{sub 2}Te{sub 4}/n-Si diode

Energy Technology Data Exchange (ETDEWEB)

Fouad, S.S. [Thin Film Laboratory, Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Sakr, G.B. [Nano-Science Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yahia, I.S., E-mail: isyahia@gmail.com [Nano-Science Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Semiconductor Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abdel-Basset, D.M. [Nano-Science Laboratory, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yakuphanoglu, F. [Department of Physics, Faculty of Science, Firat University, Elazig (Turkey)

2014-01-01

Graphical abstract: - Highlights: • XRD and DTA micrographs were used to study the structure of ZnGa{sub 2}Te{sub 4}. • C–V, G–V and R{sub s}–V of the diode characteristics have been analyzed for the first time. • Dielectric constant, dielectric loss, loss tangent and ac conductivity were determined. • The interfaces states were determined using conductance–voltage technique. • ZnGa{sub 2}Te{sub 4} is a good candidate for electronic device applications. - Abstract: Capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of p-ZnGa{sub 2}Te{sub 4}/n-Si HJD were studied over a wide frequency and temperature. Both the interface states density N{sub ss} and series resistance R{sub s} were strongly frequency and temperature dependent. The interface states density N{sub ss} is decreased with increasing frequency and increase with increasing temperature. The values of the built-in potential (V{sub bi}) were calculated and found to increase with increasing temperature and frequency. The values of capacitance C, conductance G, series resistance R{sub s}, corrected capacitance C{sub ADJ}, corrected conductance G{sub ADJ}, dielectric constant (ε′), dielectric loss (ε″), loss tangent (tan δ) and the AC conductivity (σ{sub ac}) are strongly dependent on the applied frequency, voltage and temperature. The obtained results show that the locations of N{sub ss} and R{sub s} have a significant effect on the electrical characteristics of the studied diode.

Load Insensitive, Low Voltage Quadrature Oscillator Using Single Active Element

Directory of Open Access Journals (Sweden)

Jitendra Mohan

2017-01-01

Full Text Available In this paper, a load insensitive quadrature oscillator using single differential voltage dual-X second generation current conveyor operated at low voltage is proposed. The proposed circuit employs single active element, three grounded resistors and two grounded capacitors. The proposed oscillator offers two load insensitive quadrature current outputs and three quadrature voltage outputs simultaneously. Effects of non-idealities along with the effects of parasitic are further studied. The proposed circuit enjoys the feature of low active and passive sensitivities. Additionally, a resistorless realization of the proposed quadrature oscillator is also explored. Simulation results using PSPICE program on cadence tool using 90 nm Complementary Metal Oxide Semiconductor (CMOS process parameters confirm the validity and practical utility of the proposed circuit.

Integrated reconfigurable high-voltage transmitting circuit for CMUTs

DEFF Research Database (Denmark)

Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

2015-01-01

In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes with voltages up to 100 V, maximum pulse range of 50 V, frequencies up to 5 MHz and different driving slew rates. Measurements are performed on the circuit in order to assess its functionality and power consumption...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

Exceptionally High Electric Double Layer Capacitances of Oligomeric Ionic Liquids.

Science.gov (United States)

Matsumoto, Michio; Shimizu, Sunao; Sotoike, Rina; Watanabe, Masayoshi; Iwasa, Yoshihiro; Itoh, Yoshimitsu; Aida, Takuzo

2017-11-15

Electric double layer (EDL) capacitors are promising as next-generation energy accumulators if their capacitances and operation voltages are both high. However, only few electrolytes can simultaneously fulfill these two requisites. Here we report that an oligomeric ionic liquid such as IL4 TFSI with four imidazolium ion units in its structure provides a wide electrochemical window of ∼5.0 V, similar to monomeric ionic liquids. Furthermore, electrochemical impedance measurements using Au working electrodes demonstrated that IL4 TFSI exhibits an exceptionally high EDL capacitance of ∼66 μF/cm 2 , which is ∼6 times as high as those of monomeric ionic liquids so far reported. We also found that an EDL-based field effect transistor (FET) using IL4 TFSI as a gate dielectric material and SrTiO 3 as a channel material displays a very sharp transfer curve with an enhanced carrier accumulation capability of ∼64 μF/cm 2 , as determined by Hall-effect measurements.

Bioenergetics of mammalian sperm capacitation.

Science.gov (United States)

Ferramosca, Alessandra; Zara, Vincenzo

2014-01-01

After ejaculation, the mammalian male gamete must undergo the capacitation process, which is a prerequisite for egg fertilization. The bioenergetics of sperm capacitation is poorly understood despite its fundamental role in sustaining the biochemical and molecular events occurring during gamete activation. Glycolysis and mitochondrial oxidative phosphorylation (OXPHOS) are the two major metabolic pathways producing ATP which is the primary source of energy for spermatozoa. Since recent data suggest that spermatozoa have the ability to use different metabolic substrates, the main aim of this work is to present a broad overview of the current knowledge on the energy-producing metabolic pathways operating inside sperm mitochondria during capacitation in different mammalian species. Metabolism of glucose and of other energetic substrates, such as pyruvate, lactate, and citrate, is critically analyzed. Such knowledge, besides its obvious importance for basic science, could eventually translate into the development of novel strategies for treatment of male infertility, artificial reproduction, and sperm selection methods.

Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3–δ thin films investigated by chemical capacitance measurements

Science.gov (United States)

Rupp, Ghislain M.; Fleig, Jürgen

2018-01-01

La0.6Sr0.4FeO3–δ (LSF) thin films of different thickness were prepared by pulsed laser deposition on yttria stabilized zirconia (YSZ) and characterized by using three electrode impedance spectroscopy. Electrochemical film capacitance was analyzed in relation to oxygen partial pressure (0.25 mbar to 1 bar), DC polarization (0 m to –600 m) and temperature (500 to 650 °C). For most measurement parameters, the chemical bulk capacitance dominates the overall capacitive properties and the corresponding defect chemical state depends solely on the oxygen chemical potential inside the film, independent of atmospheric oxygen pressure and DC polarization. Thus, defect chemical properties (defect concentrations and defect formation enthalpies) could be deduced from such measurements. Comparison with LSF defect chemical bulk data from the literature showed good agreement for vacancy formation energies but suggested larger electronic defect concentrations in the films. From thickness-dependent measurements at lower oxygen chemical potentials, an additional capacitive contribution could be identified and attributed to the LSF|YSZ interface. Deviations from simple chemical capacitance models at high pressures are most probably due to defect interactions. PMID:29671421

Analysis of new actuation methods for capacitive shunt micro switchs

Directory of Open Access Journals (Sweden)

Ben Sassi S

2016-01-01

Full Text Available This work investigates the use of new actuation methods in capacitive shunt micro switches. We formulate the coupled electromechanical problem by taking into account the fringing effects and nonlinearities due to mid-plane stretching. Static analysis is undertaken using the Differential Quadrature Method (DQM to obtain the pull in voltage which is verified by means of the Finite Element Method (FEM. Based on Galerkin approximation, a single degree of freedom dynamic model is developed and limit-cycle solutions are calculated using the Finite Difference Method (FDM. In addition to the harmonic waveform signal, we apply novel actuation waveform signals to simulate the frequency-response. We show that, biased signals, using a square wave signal reduces significantly the pull-in voltage compared to the triangular and harmonic signal . Finally, these results are validated experimentally.

Functional human sperm capacitation requires both bicarbonate-dependent PKA activation and down-regulation of Ser/Thr phosphatases by Src family kinases.

Science.gov (United States)

Battistone, M A; Da Ros, V G; Salicioni, A M; Navarrete, F A; Krapf, D; Visconti, P E; Cuasnicú, P S

2013-09-01

In all mammalian species studied so far, sperm capacitation correlates with an increase in protein tyrosine (Tyr) phosphorylation mediated by a bicarbonate-dependent cAMP/protein kinase A (PKA) pathway. Recent studies in mice revealed, however, that a Src family kinase (SFK)-induced inactivation of serine/threonine (Ser/Thr) phosphatases is also involved in the signaling pathways leading to Tyr phosphorylation. In view of these observations and with the aim of getting a better understanding of the signaling pathways involved in human sperm capacitation, in the present work we investigated the involvement of both the cAMP/PKA and SFK/phosphatase pathways in relation to the capacitation state of the cells. For this purpose, different signaling events and sperm functional parameters were analyzed as a function of capacitation time. Results revealed a very early bicarbonate-dependent activation of PKA indicated by the rapid (1 min) increase in both phospho-PKA substrates and cAMP levels (P < 0.05). However, a complete pattern of Tyr phosphorylation was detected only after 6-h incubation at which time sperm exhibited the ability to undergo the acrosome reaction (AR) and to penetrate zona-free hamster oocytes. Sperm capacitated in the presence of the SFK inhibitor SKI606 showed a decrease in both PKA substrate and Tyr phosphorylation levels, which was overcome by exposure of sperm to the Ser/Thr phosphatase inhibitor okadaic acid (OA). However, OA was unable to induce phosphorylation when sperm were incubated under PKA-inhibitory conditions (i.e. in the absence of bicarbonate or in the presence of PKA inhibitor). Moreover, the increase in PKA activity by exposure to a cAMP analog and a phosphodiesterase inhibitor did not overcome the inhibition produced by SKI606. Whereas the presence of SKI606 during capacitation produced a negative effect (P < 0.05) on sperm motility, progesterone-induced AR and fertilizing ability, none of these inhibitions were observed when sperm

Natural sisal fibers derived hierarchical porous activated carbon as capacitive material in lithium ion capacitor

Science.gov (United States)

Yang, Zhewei; Guo, Huajun; Li, Xinhai; Wang, Zhixing; Yan, Zhiliang; Wang, Yansen

2016-10-01

Lithium-ion capacitor (LIC) is a novel advanced electrochemical energy storage (EES) system bridging gap between lithium ion battery (LIB) and electrochemical capacitor (ECC). In this work, we report that sisal fiber activated carbon (SFAC) was synthesized by hydrothermal treatment followed by KOH activation and served as capacitive material in LIC for the first time. Different particle structure, morphology, specific surface area and heteroatoms affected the electrochemical performance of as-prepared materials and corresponding LICs. When the mass ratio of KOH to char precursor was 2, hierarchical porous structured SFAC-2 was prepared and exhibited moderate specific capacitance (103 F g-1 at 0.1 A g-1), superior rate capability and cyclic stability (88% capacity retention after 5000 cycles at 1 A g-1). The corresponding assembled LIC (LIC-SC2) with optimal comprehensive electrochemical performance, displayed the energy density of 83 Wh kg-1, the power density of 5718 W kg-1 and superior cyclic stability (92% energy density retention after 1000 cycles at 0.5 A g-1). It is worthwhile that the source for activated carbon is a natural and renewable one and the synthesis method is eco-friendly, which facilitate that hierarchical porous activated carbon has potential applications in the field of LIC and other energy storage systems.

Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

DEFF Research Database (Denmark)

Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

2017-01-01

This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... optimization. The proposed method is used to calculate the voltage bands and droop settings of PV inverters at each node by the supervisory controller. The local controller of each PV inverter implements the volt/var control and if necessary, the active power curtailment as per the received settings and based...... on measured local voltages. The advantage of the proposed method is that the calculated reactive power and active power droop settings enable fair contribution of the PV inverters at each node to the voltage regulation. Simulation studies are conducted using DigSilent Power factory software on a simplified...

Three-dimensional activated reduced graphene oxide nanocup/nickel aluminum layered double hydroxides composite with super high electrochemical and capacitance performances

International Nuclear Information System (INIS)

Lin, Yan; Ruiyi, Li; Zaijun, Li; Junkang, Liu; Yinjun, Fang; Guangli, Wang; Zhiguo, Gu

2013-01-01

The paper reported a three-dimensional activated reduced graphene oxide nanocup/nickel aluminum layered double hydroxides composite (3D-ARGON/NiAl-LDH) with super high electrochemical and capacitance performances. Graphene oxide was reduced by hydrazine in ammonia medium to form three-dimensional reduced graphene oxide nanocup using polystyrene colloidal particle as sacrificial template. The nanocup was then activated by the alkali corrosion and thermal annealing. The 3D-ARGON/NiAl-LDH was finally fabricated by the hydrothermal synthesis via in situ growth of ultrathin NiAl-LDH nanoflakes on the 3D-ARGON in an ethanol medium. The study demonstrated that the composite offers special 3D architecture with a macropore on the rim of a cup and large mesoporous structure on the wall of a cup, which will greatly boost the electron transfer and mass transport during the faradaic redox reaction, and displays excellent electrochemical and capactance performances, including high specific capacitance and rate capability, good charge/discharge stability and long-term cycling life. Its maximum specific capacitance was found to be 2712.7 F g −1 at the current density of 1 A g −1 , which is more than 7-fold that of pure NiAl-LDH, 3-fold that of common reduced graphene oxide/NiAl-LDH and 1.8-fold that of two-dimensional activated reduced graphene oxide/NiAl-LDH. The specific capacitance can remain 1174 F g −1 when the current density increases up to 50 A g −1 . After 5000 cycles at the current density of 30 A g −1 , the capacitance can keep at least 98.9%. This study provides a promising approach for the design and synthesis of graphene-based materials with largely enhanced supercapacitor behaviors, which can be potentially applied in energy storage/conversion devices

High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

Energy Technology Data Exchange (ETDEWEB)

Leontis, I.; Nassiopoulou, A. G., E-mail: A.Nassiopoulou@inn.demokritos.gr [INN, NCSR Demokritos, Patriarchou Grigoriou and Neapoleos, Aghia Paraskevi, 153 10 Athens (Greece); Botzakaki, M. A.; Georga, S. N. [Department of Physics, University of Patras, 26 504 Rion (Greece)

2016-06-28

High capacitance density three-dimensional (3D) metal-insulator-semiconductor (MIS) capacitors using Si nanowires (SiNWs) by metal-assisted chemical etching and atomic-layer-deposited alumina dielectric film were fabricated and electrically characterized. A chemical treatment was used to remove structural defects from the nanowire surface, in order to reduce the density of interface traps at the Al{sub 2}O{sub 3}/SiNW interface. SiNWs with two different lengths, namely, 1.3 μm and 2.4 μm, were studied. A four-fold capacitance density increase compared to a planar reference capacitor was achieved with the 1.3 μm SiNWs. In the case of the 2.4 μm SiNWs this increase was ×7, reaching a value of 4.1 μF/cm{sup 2}. Capacitance-voltage (C-V) measurements revealed that, following a two-cycle chemical treatment, frequency dispersion at accumulation regime and flat-band voltage shift disappeared in the case of the 1.3 μm SiNWs, which is indicative of effective removal of structural defects at the SiNW surface. In the case of the 2.4 μm SiNWs, frequency dispersion at accumulation persisted even after the two-step chemical treatment. This is attributed to a porous Si layer at the SiNW tops, which is not effectively removed by the chemical treatment. The electrical losses of MIS capacitors in both cases of SiNW lengths were studied and will be discussed.

High capacitance density MIS capacitor using Si nanowires by MACE and ALD alumina dielectric

International Nuclear Information System (INIS)

Leontis, I.; Nassiopoulou, A. G.; Botzakaki, M. A.; Georga, S. N.

2016-01-01

High capacitance density three-dimensional (3D) metal-insulator-semiconductor (MIS) capacitors using Si nanowires (SiNWs) by metal-assisted chemical etching and atomic-layer-deposited alumina dielectric film were fabricated and electrically characterized. A chemical treatment was used to remove structural defects from the nanowire surface, in order to reduce the density of interface traps at the Al_2O_3/SiNW interface. SiNWs with two different lengths, namely, 1.3 μm and 2.4 μm, were studied. A four-fold capacitance density increase compared to a planar reference capacitor was achieved with the 1.3 μm SiNWs. In the case of the 2.4 μm SiNWs this increase was ×7, reaching a value of 4.1 μF/cm"2. Capacitance-voltage (C-V) measurements revealed that, following a two-cycle chemical treatment, frequency dispersion at accumulation regime and flat-band voltage shift disappeared in the case of the 1.3 μm SiNWs, which is indicative of effective removal of structural defects at the SiNW surface. In the case of the 2.4 μm SiNWs, frequency dispersion at accumulation persisted even after the two-step chemical treatment. This is attributed to a porous Si layer at the SiNW tops, which is not effectively removed by the chemical treatment. The electrical losses of MIS capacitors in both cases of SiNW lengths were studied and will be discussed.

Simple programmable voltage reference for low frequency noise measurements

Science.gov (United States)

Ivanov, V. E.; Chye, En Un

2018-05-01

The paper presents a circuit design of a low-noise voltage reference based on an electric double-layer capacitor, a microcontroller and a general purpose DAC. A large capacitance value (1F and more) makes it possible to create low-pass filter with a large time constant, effectively reducing low-frequency noise beyond its bandwidth. Choosing the optimum value of the resistor in the RC filter, one can achieve the best ratio between the transient time, the deviation of the output voltage from the set point and the minimum noise cut-off frequency. As experiments have shown, the spectral density of the voltage at a frequency of 1 kHz does not exceed 1.2 nV/√Hz the maximum deviation of the output voltage from the predetermined does not exceed 1.4 % and depends on the holding time of the previous value. Subsequently, this error is reduced to a constant value and can be compensated.

Digital Realization of Capacitor-Voltage Feedback Active Damping for LCL-Filtered Grid Converters

DEFF Research Database (Denmark)

Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

2015-01-01

The capacitor voltage of an LCL-filter can also be used for active damping, if it is fed back for synchronization. By this way, an extra current sensor can be avoided. Compared with the existing active damping techniques designed with capacitor current feedback, the capacitor voltage feedback....... To overcome their drawbacks, a new derivative method is then proposed, based on the non-ideal generalized integrator. The performance of the proposed derivative has been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately...

Compressive sensing-based wideband capacitance measurement with a fixed sampling rate lower than the highest exciting frequency

International Nuclear Information System (INIS)

Xu, Lijun; Ren, Ying; Sun, Shijie; Cao, Zhang

2016-01-01

In this paper, an under-sampling method for wideband capacitance measurement was proposed by using the compressive sensing strategy. As the excitation signal is sparse in the frequency domain, the compressed sampling method that uses a random demodulator was adopted, which could greatly decrease the sampling rate. Besides, four switches were used to replace the multiplier in the random demodulator. As a result, not only the sampling rate can be much smaller than the signal excitation frequency, but also the circuit’s structure is simpler and its power consumption is lower. A hardware prototype was constructed to validate the method. In the prototype, an excitation voltage with a frequency up to 200 kHz was applied to a capacitance-to-voltage converter. The output signal of the converter was randomly modulated by a pseudo-random sequence through four switches. After a low-pass filter, the signal was sampled by an analog-to-digital converter at a sampling rate of 50 kHz, which was three times lower than the highest exciting frequency. The frequency and amplitude of the signal were then reconstructed to obtain the measured capacitance. Both theoretical analysis and experiments were carried out to show the feasibility of the proposed method and to evaluate the performance of the prototype, including its linearity, sensitivity, repeatability, accuracy and stability within a given measurement range. (paper)

Capacitor Current Feedback-Based Active Resonance Damping Strategies for Digitally-Controlled Inductive-Capacitive-Inductive-Filtered Grid-Connected Inverters

Directory of Open Access Journals (Sweden)

Iman Lorzadeh

2016-08-01

Full Text Available Inductive-capacitive-inductive (LCL-type line filters are widely used in grid-connected voltage source inverters (VSIs, since they can provide substantially improved attenuation of switching harmonics in currents injected into the grid with lower cost, weight and power losses than their L-type counterparts. However, the inclusion of third order LCL network complicates the current control design regarding the system stability issues because of an inherent resonance peak which appears in the open-loop transfer function of the inverter control system near the control stability boundary. To avoid passive (resistive resonance damping solutions, due to their additional power losses, active damping (AD techniques are often applied with proper control algorithms in order to damp the LCL filter resonance and stabilize the system. Among these techniques, the capacitor current feedback (CCF AD has attracted considerable attention due to its effective damping performance and simple implementation. This paper thus presents a state-of-the-art review of resonance and stability characteristics of CCF-based AD approaches for a digitally-controlled LCL filter-based grid-connected inverter taking into account the effect of computation and pulse width modulation (PWM delays along with a detailed analysis on proper design and implementation.

Analysis of the Influence of Compensation Capacitance Errors of a Wireless Power Transfer System with SS Topology

Directory of Open Access Journals (Sweden)

Yi Wang

2017-12-01

Full Text Available In this study, in order to determine the reasonable accuracy of the compensation capacitances satisfying the requirements on the output characteristics for a wireless power transfer (WPT system, taking the series-series (SS compensation structure as an example, the calculation formulas of the output characteristics, such as the power factor, output power, coil transfer efficiency, and capacitors’ voltage stress, are given under the condition of incomplete compensation according to circuit theory. The influence of compensation capacitance errors on the output characteristics of the system is then analyzed. The Taylor expansions of the theoretical formulas are carried out to simplify the formulas. The influence degrees of compensation capacitance errors on the output characteristics are calculated according to the simplified formulas. The reasonable error ranges of the compensation capacitances are then determined according to the requirements of the output characteristics of the system in the system design. Finally, the validity of the theoretical analysis and the simplified processing is verified through experiments. The proposed method has a certain guiding role for practical engineering design, especially in mass production.

Water desalination using capacitive deionization with microporous carbon electrodes.

Science.gov (United States)

Porada, S; Weinstein, L; Dash, R; van der Wal, A; Bryjak, M; Gogotsi, Y; Biesheuvel, P M

2012-03-01

Capacitive deionization (CDI) is a water desalination technology in which salt ions are removed from brackish water by flowing through a spacer channel with porous electrodes on each side. Upon applying a voltage difference between the two electrodes, cations move to and are accumulated in electrostatic double layers inside the negatively charged cathode and the anions are removed by the positively charged anode. One of the key parameters for commercial realization of CDI is the salt adsorption capacity of the electrodes. State-of-the-art electrode materials are based on porous activated carbon particles or carbon aerogels. Here we report the use for CDI of carbide-derived carbon (CDC), a porous material with well-defined and tunable pore sizes in the sub-nanometer range. When comparing electrodes made with CDC with electrodes based on activated carbon, we find a significantly higher salt adsorption capacity in the relevant cell voltage window of 1.2-1.4 V. The measured adsorption capacity for four materials tested negatively correlates with known metrics for pore structure of the carbon powders such as total pore volume and BET-area, but is positively correlated with the volume of pores of sizes <1 nm, suggesting the relevance of these sub-nanometer pores for ion adsorption. The charge efficiency, being the ratio of equilibrium salt adsorption over charge, does not depend much on the type of material, indicating that materials that have been identified for high charge storage capacity can also be highly suitable for CDI. This work shows the potential of materials with well-defined sub-nanometer pore sizes for energy-efficient water desalination. © 2012 American Chemical Society

Input Stage for Low-Voltage, Low-Noise Preamplifiers Based on a Floating-Gate MOS Transistor

DEFF Research Database (Denmark)

Igor, Mucha

1997-01-01

A novel input stage for low-voltage, low-noise preamplifiers for integrated capacitive sensors is presented. The input stage of the preamplifier employs floating-gate MOS transistors which are capable of storing the operation point of the input stage over several years without any severe degradat......A novel input stage for low-voltage, low-noise preamplifiers for integrated capacitive sensors is presented. The input stage of the preamplifier employs floating-gate MOS transistors which are capable of storing the operation point of the input stage over several years without any severe...... degradation of the performance of the circuit and without the need for a repeating programming. In this way the noise originating from any resistance previously used for the definition of the operating point is avoided completely and, moreover, by avoiding the input high-pass filter both the saturation...

Performance improvement of organic thin film transistors by using active layer with sandwich structure

Science.gov (United States)

Ni, Yao; Zhou, Jianlin; Kuang, Peng; Lin, Hui; Gan, Ping; Hu, Shengdong; Lin, Zhi

2017-08-01

We report organic thin film transistors (OTFTs) with pentacene/fluorinated copper phthalo-cyanine (F16CuPc)/pentacene (PFP) sandwich configuration as active layers. The sandwich devices not only show hole mobility enhancement but also present a well control about threshold voltage and off-state current. By investigating various characteristics, including current-voltage hysteresis, organic film morphology, capacitance-voltage curve and resistance variation of active layers carefully, it has been found the performance improvement is mainly attributed to the low carrier traps and the higher conductivity of the sandwich active layer due to the additional induced carriers in F16CuPc/pentacene. Therefore, using proper multiple active layer is an effective way to gain high performance OTFTs.

Active Power Filter DC Bus Voltage Piecewise Reaching Law Variable Structure Control

OpenAIRE

Liu, Baolian; Ding, Zujun; Zhao, Huanyu; Jin, Defei

2014-01-01

The DC bus voltage stability control is one key technology to ensure that Active Power Filter (APF) operates stably. The external disturbances such as power grid and load fluctuation and the system parameters changing may affect the stability of APF DC bus voltage and the normal operation of APF. The mathematical model of DC bus voltage is established according to power balance principle and a DC bus voltage piecewise reaching law variable structure control algorithm is proposed to solve the ...

Wideband Electrostatic Vibration Energy Harvester (e-VEH) Having a Low Start-Up Voltage Employing a High-Voltage Integrated Interface

International Nuclear Information System (INIS)

Dudka, A; Galayko, D; Basset, P; Cottone, F; Blokhina, E

2013-01-01

This paper reports on an electrostatic Vibration Energy Harvester (e-VEH) system, for which the energy conversion process is initiated with a low bias voltage and is compatible with wideband stochastic external vibrations. The system employs the auto-synchronous conditioning circuit topology with the use of a novel dedicated integrated low-power high-voltage switch that is needed to connect the charge pump and flyback – two main parts of the used conditioning circuit. The proposed switch is designed and implemented in AMS035HV CMOS technology. Thanks to the proposed switch device, which is driven with a low-voltage ground-referenced logic, the e-VEH system may operate within a large voltage range, from a pre-charge low voltage up to several tens volts. With such a high-voltage e-VEH operation, it is possible to obtain a strong mechanical coupling and a high rate of vibration energy conversion. The used transducer/resonator device is fabricated with a batch-processed MEMS technology. When excited with stochastic vibrations having an acceleration level of 0.8 g rms distributed in the band 110–170 Hz, up to 0.75 μW of net electrical power has been harvested with our system. This work presents an important milestone in the challenge of designing a fully integrated smart conditioning interface for the capacitive e-VEHs

The effect of activation rate on left atrial bipolar voltage in patients with paroxysmal atrial fibrillation.

Science.gov (United States)

Williams, Steven E; Linton, Nick; O'Neill, Louisa; Harrison, James; Whitaker, John; Mukherjee, Rahul; Rinaldi, Christopher A; Gill, Jaswinder; Niederer, Steven; Wright, Matthew; O'Neill, Mark

2017-09-01

Bipolar voltage is used during electroanatomic mapping to define abnormal myocardium, but the effect of activation rate on bipolar voltage is not known. We hypothesized that bipolar voltage may change in response to activation rate. By examining corresponding unipolar signals we sought to determine the mechanisms of such changes. LA extrastimulus mapping was performed during CS pacing in 10 patients undergoing first time paroxysmal atrial fibrillation ablation. Bipolar and unipolar electrograms were recorded using a PentaRay catheter (4-4-4 spacing) and indifferent IVC electrode, respectively. An S1S2 pacing protocol was delivered with extrastimulus coupling interval reducing from 350 to 200 milliseconds. At each recording site (119 ± 37 per LA), bipolar peak-to-peak voltage, unipolar peak to peak voltage and activation delay between unipole pairs was measured. Four patterns of bipolar voltage/extrastimulus coupling interval curves were seen: voltage attenuation with plateau voltage >1 mV (48 ± 15%) or voltage unaffected by coupling interval with plateau voltage >1 mV (17 ± 10%) or voltage attenuation were associated with significantly greater unipolar voltage attenuation at low (25 ± 28 mV/s vs. 9 ± 11 mV/s) and high (23 ± 29 mV/s vs. 6 ± 12 mV/s) plateau voltage sites (P voltage attenuation (P = 0.026). Bipolar electrogram voltage is dependent on activation rate at a significant proportion of sites. Changes in unipolar voltage and timing underlie these effects. These observations have important implications for use of voltage mapping to delineate abnormal atrial substrate. © 2017 The Authors. Journal of Cardiovascular Electrophysiology published by Wiley Periodicals, Inc.

Graphene and maghemite composites based supercapacitors delivering high volumetric capacitance and extraordinary cycling stability

International Nuclear Information System (INIS)

Zhang, Haitao; Zhang, Xiong; Lin, He; Wang, Kai; Sun, Xianzhong; Xu, Nansheng; Li, Chen; Ma, Yanwei

2015-01-01

Metal oxides (like MnO 2 , Fe 2 O 3 , and Co 3 O 4 , etc) based supercapacitors have disadvantages, such as low volumetric capacitance for thick-film electrodes, or short cycling life because a Faradaic process involves chemical changes of state of the reactant species. In the present work, we report that supercapacitors based on reduced graphene oxide and maghemite (γ-Fe 2 O 3 ) composites (GγM) exhibit superior performance. GγM electrodes with average electrode thickness up to ∼60 μm have a high volumetric capacitance of 230 F cm −3 , together with an outstanding electrode package density of 1.44 g cm −3 . Particularly, the GγM electrodes have excellent cycling performance of ∼90% capacitance retention over 100,000 galvanostatic charge–discharge cycles or voltage floating at 0.9 V for 300 h. No detectable change in phase and an effective inhibition of γ-Fe 2 O 3 refinement after cycle-life test are confirmed by X-ray diffraction and transmission electron microscopy

Development trends of combined inductance-capacitance electromechanical energy converters

Directory of Open Access Journals (Sweden)

Karayan Hamlet

2018-01-01

Full Text Available In the article the modern state of completely new direction of electromechanical science such as combined inductive-capacitive electromechanics is considered. The wide spectra of its possible practical applications and prospects for further development are analyzed. A new approach for mathematical description of transients in dualcon jugate dynamic systems is proposed. On the basis of the algorithm differential equations for inductive-capacitive compatible electromechanical energy converters are derived. The generalized Lagrangian theory of combined inductively-capacitive electric machines was developed as a union of generalized Lagrangian models of inductive and capacitive electro-mechanical energy converters developed on the basis of the basic principles of binary-conjugate electrophysics. The author gives equations of electrodynamics and electromechanics of combined inductive-capacitive electric machines in case there are active electrotechnical materials of dual purpose (ferroelectromagnets in the structure of their excitation system. At the same time, the necessary Lagrangian for combined inductive-capacitive forces was built using new technologies of interaction between inductive and capacitive subsystems. The joint solution of these equations completely determines the dynamic behavior and energy characteristics of the generalized model of combined machines of any design and in any modes of interaction of their functional elements

Uncertainty in microscale gas damping: Implications on dynamics of capacitive MEMS switches

International Nuclear Information System (INIS)

Alexeenko, Alina; Chigullapalli, Sruti; Zeng Juan; Guo Xiaohui; Kovacs, Andrew; Peroulis, Dimitrios

2011-01-01

Effects of uncertainties in gas damping models, geometry and mechanical properties on the dynamics of micro-electro-mechanical systems (MEMS) capacitive switch are studied. A sample of typical capacitive switches has been fabricated and characterized at Purdue University. High-fidelity simulations of gas damping on planar microbeams are developed and verified under relevant conditions. This and other gas damping models are then applied to study the dynamics of a single closing event for switches with experimentally measured properties. It has been demonstrated that although all damping models considered predict similar damping quality factor and agree well for predictions of closing time, the models differ by a factor of two and more in predicting the impact velocity and acceleration at contact. Implications of parameter uncertainties on the key reliability-related parameters such as the pull-in voltage, closing time and impact velocity are discussed. A notable effect of uncertainty is that the nominal switch, i.e. the switch with the average properties, does not actuate at the mean actuation voltage. Additionally, the device-to-device variability leads to significant differences in dynamics. For example, the mean impact velocity for switches actuated under the 90%-actuation voltage (about 150 V), i.e. the voltage required to actuate 90% of the sample, is about 129 cm/s and increases to 173 cm/s for the 99%-actuation voltage (of about 173 V). Response surfaces of impact velocity and closing time to five input variables were constructed using the Smolyak sparse grid algorithm. The sensitivity analysis showed that impact velocity is most sensitive to the damping coefficient whereas the closing time is most affected by the geometric parameters such as gap and beam thickness. - Highlights: → We examine stochastic non-linear response of a microsystem switch subject to multiple input uncertainties. → Sample devices have been fabricated and device

An Accurate Study on Capacitive Microphone with Circular Diaphragm Using a Higher Order Elasticity Theory

Directory of Open Access Journals (Sweden)

Shakiba Dowlati

Full Text Available Abstract This study has been undertaken to investigate the mechanical behavior of the capacitive microphone with clamped circular diaphragm using modified couple stress theory in comparison to the classical one. Presence of the length scale parameter in modified couple stress theory provides the means to evaluate the size effect on the microphone mechanical behavior. Investigating Pull-in phenomenon and dynamic behavior of the microphone are the matters provided due to the application of a step DC voltage. Also the effects of different air damping coefficients on dynamic pull-in voltage and pull-in time have been studied. The output level or sensitivity of the microphone has been studied by investigating the frequency response in term of magnitude for different length scale parameters to figure out how the length scale parameter affects on the sensitivity of the capacitive microphone. To achieve these ends, the nonlinear differential equation of the circular diaphragm has been extracted using Kirchhoff thin plate theory. Then, a Step-by-Step Linearization Method (SSLM has been used to escape from the nonlinearity of the differential equation. Afterwards, Galerkin-based reduced-order model has been applied to solve the obtained equation.

Grid-Voltage-Feedforward Active Damping for Grid-Connected Inverter with LCL Filter

DEFF Research Database (Denmark)

Lu, Minghui; Wang, Xiongfei; Blaabjerg, Frede

2016-01-01

For the grid-connected voltage source inverters, the feedforward scheme of grid voltage is commonly adopted to mitigate the current distortion caused by grid background voltages harmonics. This paper investigates the grid-voltage-feedforward active damping for grid connected inverter with LCL...... filter. It reveals that proportional feedforward control can not only fulfill the mitigation of grid disturbance, but also offer damping effects on the LCL filter resonance. Digital delays are intrinsic to digital controlled inverters; with these delays, the feedforward control can be equivalent...

Modeling, numerical simulation, and nonlinear dynamic behavior analysis of PV microgrid-connected inverter with capacitance catastrophe

Science.gov (United States)

Li, Sichen; Liao, Zhixian; Luo, Xiaoshu; Wei, Duqu; Jiang, Pinqun; Jiang, Qinghong

2018-02-01

The value of the output capacitance (C) should be carefully considered when designing a photovoltaic (PV) inverter since it can cause distortion in the working state of the circuit, and the circuit produces nonlinear dynamic behavior. According to Kirchhoff’s laws and the characteristics of an ideal operational amplifier for a strict piecewise linear state equation, a circuit simulation model is constructed to study the system parameters (time, C) for the current passing through an inductor with an inductance of L and the voltage across the capacitor with a capacitance of C. The developed simulation model uses Runge-Kutta methods to solve the state equations. This study focuses on predicting the fault of the circuit from the two aspects of the harmonic distortion and simulation results. Moreover, the presented model is also used to research the working state of the system in the case of a load capacitance catastrophe. The nonlinear dynamic behaviors in the inverter are simulated and verified.

Capacitive chemical sensor

Science.gov (United States)

Manginell, Ronald P; Moorman, Matthew W; Wheeler, David R

2014-05-27

A microfabricated capacitive chemical sensor can be used as an autonomous chemical sensor or as an analyte-sensitive chemical preconcentrator in a larger microanalytical system. The capacitive chemical sensor detects changes in sensing film dielectric properties, such as the dielectric constant, conductivity, or dimensionality. These changes result from the interaction of a target analyte with the sensing film. This capability provides a low-power, self-heating chemical sensor suitable for remote and unattended sensing applications. The capacitive chemical sensor also enables a smart, analyte-sensitive chemical preconcentrator. After sorption of the sample by the sensing film, the film can be rapidly heated to release the sample for further analysis. Therefore, the capacitive chemical sensor can optimize the sample collection time prior to release to enable the rapid and accurate analysis of analytes by a microanalytical system.

High voltage generator circuit with low power and high efficiency applied in EEPROM

International Nuclear Information System (INIS)

Liu Yan; Zhang Shilin; Zhao Yiqiang

2012-01-01

This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM). The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique. The high efficiency is dependent on the zero threshold voltage (V th ) MOSFET and the charge transfer switch (CTS) charge pump. The proposed high voltage generator circuit has been implemented in a 0.35 μm EEPROM CMOS process. Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits. This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation. (semiconductor integrated circuits)

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

Science.gov (United States)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

International Nuclear Information System (INIS)

Zhuge, Jing; Huang, Ru; Wang, Yangyuan; Verhulst, Anne S; Vandenberghe, William G; Dehaene, Wim; Groeseneken, Guido

2011-01-01

This paper investigates the potential of tunnel field-effect transistors (TFETs), with emphasis on short-gate TFETs, by simulation for low-power digital applications having a supply voltage lower than 0.5 V. A transient study shows that the tunneling current has a negligible contribution in charging and discharging the gate capacitance of TFETs. In spite of a higher resistance region in the short-gate TFET, the gate (dis)charging speed still meets low-voltage application requirements. A circuit analysis is performed on short-gate TFETs with different materials, such as Si, Ge and heterostructures in terms of voltage overshoot, delay, static power, energy consumption and energy delay product (EDP). These results are compared to MOSFET and full-gate TFET performance. It is concluded that short-gate heterostructure TFETs (Ge–source for nTFET, In 0.6 Ga 0.4 As–source for pTFET) are promising candidates to extend the supply voltage to lower than 0.5 V because they combine the advantage of a low Miller capacitance, due to the short-gate structures, and strong drive current in TFETs, due to the narrow bandgap material in the source. At a supply voltage of 0.4 V and for an EOT and channel length of 0.6 nm and 40 nm, respectively, a three-stage inverter chain based on short-gate heterostructure TFETs saves 40% energy consumption per cycle at the same delay and shows 60%–75% improvement of EDP at the same static power, compared to its full-gate counterpart. When compared to the MOSFET, better EDP can be achieved in the heterostructure TFET especially at low static power consumption

rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors

Science.gov (United States)

Inhofer, A.; Duffy, J.; Boukhicha, M.; Bocquillon, E.; Palomo, J.; Watanabe, K.; Taniguchi, T.; Estève, I.; Berroir, J. M.; Fève, G.; Plaçais, B.; Assaf, B. A.

2018-02-01

A metal-dielectric topological-insulator capacitor device based on hexagonal-boron-nitrate- (h -BN) encapsulated CVD-grown Bi2Se3 is realized and investigated in the radio-frequency regime. The rf quantum capacitance and device resistance are extracted for frequencies as high as 10 GHz and studied as a function of the applied gate voltage. The superior quality h -BN gate dielectric combined with the optimized transport characteristics of CVD-grown Bi2Se3 (n ˜1018 cm-3 in 8 nm) on h -BN allow us to attain a bulk depleted regime by dielectric gating. A quantum-capacitance minimum and a linear variation of the capacitance with the chemical potential are observed revealing a Dirac regime. The topological surface state in proximity to the gate is seen to reach charge neutrality, but the bottom surface state remains charged and capacitively coupled to the top via the insulating bulk. Our work paves the way toward implementation of topological materials in rf devices.

A grid-voltage-sensorless resistive active power filter with series LC-filter

DEFF Research Database (Denmark)

Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede

2017-01-01

Voltage-sensorless control has been investigated for Voltage Source Inverters (VSIs) for many years due to the reduced system cost and potentially improved system reliability. The VSI based Resistive Active Power Filters (R-APFs) are now widely used to prevent the harmonic resonance in power...... distribution network, for which the voltage sensors are needed in order to obtain the current reference. In this paper a grid-voltage-sensorless control strategy is proposed for the R-APF with series LC-filter. Unlike the traditional resistance emulation method, this proposed control method re...

A Grid-Voltage-Sensorless Resistive Active Power Filter with Series LC-Filter

DEFF Research Database (Denmark)

Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede

2018-01-01

Voltage-sensorless control has been investigated for Voltage Source Inverters (VSIs) for many years due to the reduced system cost and potentially improved system reliability. The VSI based Resistive Active Power Filters (R-APFs) are now widely used to prevent the harmonic resonance in power...... distribution network, for which the voltage sensors are needed in order to obtain the current reference. In this paper a grid-voltage-sensorless control strategy is proposed for the R-APF with series LC-filter. Unlike the traditional resistance emulation method, this proposed control method re...

Five-Level Active-Neutral-Point-Clamped DC/DC Converter for Medium-Voltage DC Grids

DEFF Research Database (Denmark)

Liu, Dong; Deng, Fujin; Chen, Zhe

2017-01-01

This paper proposes a five-level active-neutralpoint- clamped (5L-ANPC) dc/dc converter for applications in medium voltage dc (MVDC) grids. A modulation strategy is proposed for the 5L-ANPC dc/dc converter to generate multilevel voltage waveforms, which can effectively reduce voltage change rate dv...... effectively eliminate high voltage leaps caused by the dead time effect. In addition, a capacitor voltage control strategy is proposed for the 5L-ANPC dc/dc converter to ensure the balanced flying capacitor voltage and desired five-level voltage waveforms. Finally, simulation and experimental studies...

Super-capacitive electro-chemical performance of polymer blend gel polymer electrolyte (GPE) in carbon-based electrical double-layer capacitors

International Nuclear Information System (INIS)

Syahidah, S. Nuur; Majid, S.R.

2013-01-01

This study reports on the fabrication and comparative performance characteristics of a symmetrical electrical double-layer capacitor (EDLC) employed gel polymer electrolyte (GPE) assembled between carbon based electrodes. Three cells, A, B and C were fabricated using different composition of active materials (activated or porous carbon), binder (PVdF-HFP) and conductivity enhancer (super-P). The configuration of cell A: 0.9 porous carbon/0.1 PVdF-HFP, cell B: 0.45 activated carbon/0.45 porous carbon/0.1 PVdF-HFP and cell C: 0.8 activated carbon/0.1 super-P/0.1 PVdF-HFP. The GPE, comprising a poly(vinyl pyrrolidone) (PVP)/poly(vinylidene fluoride co-hexafluoroproplyne) (PVdF-HFP) blend complexed with magnesium triflate, Mg(CF 3 SO 3 ) 2 , was prepared by the solution casting technique at 60 °C. The physico-chemical properties of the GPEs were characterized by electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), linear sweep voltammetry (LSV) and cyclic voltammetry (CV). The ionic conductivity at the ambient temperature of the GPE is 2.16 × 10 −4 S cm −1 at 7.5 wt.% of Mg(CF 3 SO 3 ) 2 with a ∼2.6 V electro-chemical stability window. At the 1000th cycle, the specific capacitance, C s of cell A is 89 F g −1 while cell B and C are 63 and 49 F g −1 . Cell A shows excellent long-term cyclic stability (less than a 5% decrease in specific capacitance after 1000 cycles). The best operating voltage for cell A is 1.6 V with the specific capacitance 106 F g −1 after 500 cycles

Global Model for Asymmetric, Diode-Type Dual Frequency Capacitive Discharge

Science.gov (United States)

Kim, Jisoo; Lieberman, M. A.; Lichtenberg, A. J.

2003-10-01

Dual frequency capacitive reactors can have desirable properties for dielectric etch: low cost, robust uniformity over large areas, and control of dissociation. In the ideal case, the high frequency power controls the plasma density (ion flux) and the low frequency voltage controls the ion bombarding energy. Typical operating conditions are: discharge radius 15-30 cm, length 1-3 cm, pressure 30-200 mTorr, high frequency 27.1-160 MHz, low frequency 2-13.6 MHz, and powers of 500-3000 W for both high and low frequencies. The decoupling of the high and low frequencies is an important feature of dual frequency capacitive discharges. In this work, we describe a global (volume-averaged) model having different top and bottom plate areas that incorporates particle balance, and ohmic and stochastic heating for high and low frequencies. The model is used to obtain the decoupling of high and low frequencies and to investigate limitations to ideal decoupling. Support provided by Lam Research, NSF Grant ECS-0139956, California industries, and UC-SMART Contract SM99-10051.

Plasma breakdown in a capacitively-coupled radiofrequency argon discharge

Science.gov (United States)

Smith, H. B.; Charles, C.; Boswell, R. W.

1998-10-01

Low pressure, capacitively-coupled rf discharges are widely used in research and commercial ventures. Understanding of the non-equilibrium processes which occur in these discharges during breakdown is of interest, both for industrial applications and for a deeper understanding of fundamental plasma behaviour. The voltage required to breakdown the discharge V_brk has long been known to be a strong function of the product of the neutral gas pressure and the electrode seperation (pd). This paper investigates the dependence of V_brk on pd in rf systems using experimental, computational and analytic techniques. Experimental measurements of V_brk are made for pressures in the range 1 -- 500 mTorr and electrode separations of 2 -- 20 cm. A Paschen-style curve for breakdown in rf systems is developed which has the minimum breakdown voltage at a much smaller pd value, and breakdown voltages which are significantly lower overall, than for Paschen curves obtained from dc discharges. The differences between the two systems are explained using a simple analytic model. A Particle-in-Cell simulation is used to investigate a similar pd range and examine the effect of the secondary emission coefficient on the rf breakdown curve, particularly at low pd values. Analytic curves are fitted to both experimental and simulation results.

Capacitive micromachined ultrasonic transducer arrays as tunable acoustic metamaterials

Energy Technology Data Exchange (ETDEWEB)

Lani, Shane W., E-mail: shane.w.lani@gmail.com, E-mail: karim.sabra@me.gatech.edu, E-mail: levent.degertekin@me.gatech.edu; Sabra, Karim G. [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 801Ferst Drive, Georgia 30332-0405 (United States); Wasequr Rashid, M.; Hasler, Jennifer [School of Electrical and Computer Engineering, Georgia Institute of Technology, Van Leer Electrical Engineering Building, 777 Atlantic Drive NW, Atlanta, Georgia 30332-0250 (United States); Levent Degertekin, F. [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 801Ferst Drive, Georgia 30332-0405 (United States); School of Electrical and Computer Engineering, Georgia Institute of Technology, Van Leer Electrical Engineering Building, 777 Atlantic Drive NW, Atlanta, Georgia 30332-0250 (United States)

2014-02-03

Capacitive Micromachined Ultrasonic Transducers (CMUTs) operating in immersion support dispersive evanescent waves due to the subwavelength periodic structure of electrostatically actuated membranes in the array. Evanescent wave characteristics also depend on the membrane resonance which is modified by the externally applied bias voltage, offering a mechanism to tune the CMUT array as an acoustic metamaterial. The dispersion and tunability characteristics are examined using a computationally efficient, mutual radiation impedance based approach to model a finite-size array and realistic parameters of variation. The simulations are verified, and tunability is demonstrated by experiments on a linear CMUT array operating in 2-12 MHz range.

Electrochemical capacitance of NiO/Ru{sub 0.35}V{sub 0.65}O{sub 2} asymmetric electrochemical capacitor

Energy Technology Data Exchange (ETDEWEB)

Yuan, Chang-Zhou; Gao, Bo; Zhang, Xiao-Gang [College of Material Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

2007-11-08

A designed asymmetric hybrid electrochemical capacitor was presented where NiO and Ru{sub 0.35}V{sub 0.65}O{sub 2} as the positive and negative electrode, respectively, both stored charge through reversible faradic pseudocapacitive reactions of the anions (OH{sup -}) with electroactive materials. And the two electrodes had been individually tested in 1 M KOH aqueous electrolyte to define the adequate balance of the active materials in the hybrid system as well as the working voltage of the capacitor based on them. The electrochemical tests demonstrated that the maximum specific capacitance and energy density of the asymmetric hybrid electrochemical capacitor were 102.6 F g{sup -1} and 41.2 Wh kg{sup -1}, respectively, delivered at a current density of 7.5 A cm{sup -2}. And the specific energy density decreased to 23.0 Wh kg{sup -1} when the specific power density increased up to 1416.7 W kg{sup -1}. The hybrid electrochemical capacitor also exhibited a good electrochemical stability with 83.5% of the initial capacitance over consecutive 1500 cycle numbers. (author)

Voltage Stress on Y Capacitors from Indirect Lightning Pulses According to ED-14/DO-160

Science.gov (United States)

Meier, F.

2012-05-01

Transients due to lightning strikes on an aircraft's fuselage impose stress on the input filters of elec- tronic equipment. Permanent damage can occur when exceeding the voltage handling capacity of filter components causing a short circuit to ground. In ED-14/DO-160, section 22, a number of waveforms and levels are defined which are used to check the airworthiness of avionics equipment. Depending on pro- cedure and level, Y-capacitors are stressed by transient voltages which exceed their dielectric strength. The design engineer's task is a properly select the type and voltage rating of capacitors. With moderate simplifications, a LCR-series network is justified to calculate the peak voltage dependent on the capacitance.

Cellular elements for seeing in the dark: voltage-dependent conductances in cockroach photoreceptors

Directory of Open Access Journals (Sweden)

Salmela Iikka

2012-08-01

Full Text Available Abstract Background The importance of voltage-dependent conductances in sensory information processing is well-established in insect photoreceptors. Here we present the characterization of electrical properties in photoreceptors of the cockroach (Periplaneta americana, a nocturnal insect with a visual system adapted for dim light. Results Whole-cell patch-clamped photoreceptors had high capacitances and input resistances, indicating large photosensitive rhabdomeres suitable for efficient photon capture and amplification of small photocurrents at low light levels. Two voltage-dependent potassium conductances were found in the photoreceptors: a delayed rectifier type (KDR and a fast transient inactivating type (KA. Activation of KDR occurred during physiological voltage responses induced by light stimulation, whereas KA was nearly fully inactivated already at the dark resting potential. In addition, hyperpolarization of photoreceptors activated a small-amplitude inward-rectifying (IR current mediated at least partially by chloride. Computer simulations showed that KDR shapes light responses by opposing the light-induced depolarization and speeding up the membrane time constant, whereas KA and IR have a negligible role in the majority of cells. However, larger KA conductances were found in smaller and rapidly adapting photoreceptors, where KA could have a functional role. Conclusions The relative expression of KA and KDR in cockroach photoreceptors was opposite to the previously hypothesized framework for dark-active insects, necessitating further comparative work on the conductances. In general, the varying deployment of stereotypical K+ conductances in insect photoreceptors highlights their functional flexibility in neural coding.

An improved partially interleaved transformer structure for high-voltage high-frequency multiple-output applications

DEFF Research Database (Denmark)

Zhao, Bin; Ouyang, Ziwei; Andersen, Michael A. E.

2017-01-01

. The proposed structure features lower leakage inductance, smaller AC capacitance and lower rate of AC-DC resistance, which is suitable for high-frequency high-efficiency applications. A planar transformer with the proposed structure was built and tested in an LCLC resonant converter, where the input voltage...

Variation sweep rate cyclic voltammetry on the capacitance electrode activated carbon/PVDF with polymer electrolyte

Science.gov (United States)

Rohmawati, L.; Setyarsih, W.; Nurjannah, T.

2018-03-01

Sweep rate of the process voltammetry cyclic characterization is very influential towards the electrode capacitance value, especially on activated carbon electrodes/PVDF. A simple method of this research by use a mixing for electrode activated carbon/10 wt. % PVDF and the separator is made of a polymer electrolyte (PVA/H3PO4) by a sol gel method. The prototype supercapacitor is made in the form of a sandwich with a separator placed between two electrodes. Electrodes and separators are arranged in layers at a pressure of 1500 psi, then heated at 50°C for 10 minutes. Next done cyclic voltammetry in a potential range of -1 V to 1 V with a sweep rate of 5 mV/s, 10 mV/s, 20 mV/s, 25 mV/s and 50 mV/s. This results of curves voltammogram is reversible, the most wide curve on the sweep rate of 5 mV/s and most narrow curve on a sweep rate of 50 mV/s. Supercapacitor capacitance values obtained by 86 F/g, 43 F/g, 21 F/g, 16 F/g, and 8 F/g.

Highly Accurate Derivatives for LCL-Filtered Grid Converter with Capacitor Voltage Active Damping

DEFF Research Database (Denmark)

Xin, Zhen; Loh, Poh Chiang; Wang, Xiongfei

2016-01-01

The middle capacitor voltage of an LCL-filter, if fed back for synchronization, can be used for active damping. An extra sensor for measuring the capacitor current is then avoided. Relating the capacitor voltage to existing popular damping techniques designed with capacitor current feedback would...... are then proposed, based on either second-order or non-ideal generalized integrator. Performances of these derivatives have been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately. Experimental results presented have verified...

A Generic Topology Derivation Method for Single-phase Converters with Active Capacitive DC-links

DEFF Research Database (Denmark)

Wang, Haoran; Wang, Huai; Zhu, Guorong

2016-01-01

capacitive DCDC- link solutions, but important aspects of the topology assess-ment, such as the total energy storage, overall capacitive energy buffer ratio, cost, and reliability are still not available. This paper proposes a generic topology derivation method of single-phase power converters...

Effects of heat treatment on the hierarchical porous structure and electro-capacitive properties of RuO2/activated carbon nanofiber composites

International Nuclear Information System (INIS)

Jun, Ye Ri; Kim, Bo Hye

2016-01-01

Electrochemical capacitors based on hierarchical porous activated carbon nanofiber (RuO 2 /ACNF) composites are fabricated by one-step electrospinning, and then stabilized at different activation temperatures. The effect of the activation temperature on the structural properties and electrochemical behavior of the RuO 2 /ACNF composites is intensively investigated in 6 M KOH electrolyte. The RuO 2 /ACNF-800 composites activated at high temperature possess abundant mesopores and larger pores, which improve the electrochemical performance, especially at high charge–discharge rates. The energy storage capabilities of the RuO 2 /ACNF-800 electrode prepared at high temperature are as follows: a maximum specific capacitance of 150 F/g and an energy density of 14–20 Wh/kg in the respective power density range of 400 to 10 000 W/kg in an aqueous solution. Furthermore, this electrode exhibits high-rate electrochemical performance with a specific capacitance reduction of less than 28% of the initial value at a discharge current of 20 mA/cm 2 . Therefore, the hierarchical porous RuO 2 /ACNF composites with well-developed mesoporous structure provide low resistance for charge diffusion and a short pathway for ion transportation, yielding good capacitive behavior

The reduction of leading- and trailing-edge of high-voltage steep pulse in plasma immersion ion implantation

International Nuclear Information System (INIS)

Zhu Zongtao; Gui Gang; Wang Zhijian; Gong Chunzhi; Yang Shiqin; Tian Xiubo

2010-01-01

During plasma immersion ion implantation (PIII) processes, due to the capacitance effect of the coaxial cable and plasma load, the output voltage pulse of high-voltage modulator possesses a longer leading- and trailing-edge time. The leading- and trailing-edge of the high voltage (HV) pulse have a critical effect on the ion-energy uniformity, depth and dose distribution during PIII processes. In this work, a tetrode was used as a hard tube to switch the DC high voltage, and a HV pulse modulator with a maximum pulse voltage of 40 kV was built successfully. The effect of the trailing-edge time on the implantation uniformity was simulated by one-dimension PIC method. The potential on the control grids of the tetrode was optimized to obtain a HV pulse with a short rise time. In our system, 200 V potential on grid one is utilized and the leading-edge time of pulse can be as small as 1 μs. The IGBTs in series was utilized to release the remnant charges reserved in the equivalent capacitance of the plasma load and coaxial cable. Thus the trailing-edge time of the HV pulse could be reduced. The effect of the driver signals with different delay time and the absorption parameters of each IGBTs were simulated by PSPICE software to optimize the design the electric circuit. (authors)

Carbon electrode for desalination purpose in capacitive deionization

International Nuclear Information System (INIS)

Endarko,; Fadilah, Nurul; Anggoro, Diky

2016-01-01

Carbon electrodes for desalination purpose have been successfully synthesized using activated carbon powder (BET surface area=700 – 1400 m 2 /g), carbon black and polyvinyl alcohol (PVA) binder by cross-linking method with glutaric acid (GA) at 120 °C. The electrochemical properties of the carbon electrodes were analyzed using electrical impedance spectroscopy (EIS) and cyclic voltammetry (CV) whilst the physical properties were observed with scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM/EDX). In order to assess the desalting performance, salt removal experiments were performed by constructing a capacitive deionization unit cell with five pairs of carbon electrodes. For each pair consisted of two parallel carbon electrodes separated by a spacer. Desalination and regeneration processes were also observed in the salt-removal experiments. The salt-removal experiments were carried out in single-pass mode using a solution with 0.1 M NaCl at a flow rate of 10 mL/min. A voltage of 3 V was applied to the cell for 60 minutes for both processes in desalination and regeneration. The result showed that the percentage value of the salt-removal was achieved at 20%.

Carbon electrode for desalination purpose in capacitive deionization

Energy Technology Data Exchange (ETDEWEB)

Endarko,, E-mail: endarko@physics.its.ac.id; Fadilah, Nurul; Anggoro, Diky [Physics Department, Institut Teknologi Sepuluh Nopember (ITS) Kampus ITS, Sukolilo Surabaya 60111, Jawa Timur (Indonesia)

2016-03-11

Carbon electrodes for desalination purpose have been successfully synthesized using activated carbon powder (BET surface area=700 – 1400 m{sup 2}/g), carbon black and polyvinyl alcohol (PVA) binder by cross-linking method with glutaric acid (GA) at 120 °C. The electrochemical properties of the carbon electrodes were analyzed using electrical impedance spectroscopy (EIS) and cyclic voltammetry (CV) whilst the physical properties were observed with scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM/EDX). In order to assess the desalting performance, salt removal experiments were performed by constructing a capacitive deionization unit cell with five pairs of carbon electrodes. For each pair consisted of two parallel carbon electrodes separated by a spacer. Desalination and regeneration processes were also observed in the salt-removal experiments. The salt-removal experiments were carried out in single-pass mode using a solution with 0.1 M NaCl at a flow rate of 10 mL/min. A voltage of 3 V was applied to the cell for 60 minutes for both processes in desalination and regeneration. The result showed that the percentage value of the salt-removal was achieved at 20%.

Na/K-ATPase regulates bovine sperm capacitation through raft- and non-raft-mediated signaling mechanisms.

Science.gov (United States)

Rajamanickam, Gayathri D; Kastelic, John P; Thundathil, Jacob C

2017-11-01

Highly dynamic lipid microdomains (rafts) in the sperm plasma membrane contain several signaling proteins that regulate sperm capacitation. Na/K-ATPase isoforms (testis-specific isoform ATP1A4 and ubiquitous isoform ATP1A1) are abundant in bovine sperm plasma membrane. We previously reported that incubation of bovine sperm with ouabain, a specific Na/K-ATPase ligand, induced tyrosine phosphorylation of several sperm proteins during capacitation. The objective of this study was to investigate the roles of lipid rafts and non-rafts in Na/K-ATPase enzyme activity and signaling during bovine sperm capacitation. Content of ATP1A4 and, to a lesser extent, ATP1A1 was increased in raft and non-raft fractions of capacitated sperm, although non-raft enzyme activities of both isoforms were higher than the corresponding activities in rafts from capacitated sperm. Yet, ATP1A4 was the predominant isoform responsible for total Na/K-ATPase activity in both rafts and non-rafts. A comparative increase in phosphorylation of signaling molecules was observed in both raft (CAV1) and non-raft (EGFR and ERK1/2) membrane fractions during capacitation. Although SRC was phosphorylated in both membrane fractions, the non-raft fraction possessed more of this activated form. We also inferred, by immunoprecipitation, that ATP1A4 interacted with CAV1 and EGFR in the raft fraction, whereas interactions of ATP1A4 with SRC, EGFR, and ERK1/2 occurred in the non-raft fraction of ouabain-capacitated sperm; conversely, ATP1A1 interacted only with CAV1 in both fractions of uncapacitated and capacitated sperm. In conclusion, both raft and non-raft cohorts of Na/K-ATPase isoforms contributed to phosphorylation of signaling molecules during bovine sperm capacitation. © 2017 Wiley Periodicals, Inc.

Electrolyte Engineering: Optimizing High-Rate Double-Layer Capacitances of Micropore- and Mesopore-Rich Activated Carbon.

Science.gov (United States)

Chen, Ting-Hao; Yang, Cheng-Hsien; Su, Ching-Yuan; Lee, Tai-Chou; Dong, Quan-Feng; Chang, Jeng-Kuei

2017-09-22

Various types of electrolyte cations as well as binary cations are used to optimize the capacitive performance of activated carbon (AC) with different pore structures. The high-rate capability of micropore-rich AC, governed by the mobility of desolvated cations, can outperform that of mesopore-rich AC, which essentially depends on the electrolyte conductivity. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ag/PEPC/NiPc/ZnO/Ag thin film capacitive and resistive humidity sensors

International Nuclear Information System (INIS)

Karimov, Kh. S.; Saleem, M.; Murtaza, Imran; Farooq, M.; Cheong, Kuan Yew; Noor, Ahmad Fauzi Mohd

2010-01-01

A thin film of blended poly-N-epoxypropylcarbazole (PEPC) (25 wt.%), nickel phthalocyanine (NiPc) (50 wt.%) and ZnO nano-powder (25 wt.%) in benzene (5 wt.%) was spin-coated on a glass substrate with silver electrodes to produce a surface-type Ag/PEPC/NiPc/ZnO/Ag capacitive and resistive sensor. Sensors with two different PEPC/NiPc/ZnO film thicknesses (330 and 400 nm) were fabricated and compared. The effects of humidity on capacitance and resistance of the Ag/PEPC/NiPc/ZnO/Ag sensors were investigated at two frequencies of the applied voltage: 120 Hz and 1 kHz. It was observed that at 120 Hz under humidity of up to 95% RH the capacitance of the sensors increased by 540 times and resistance decreased by 450 times with respect to humidity conditions of 50% RH. It was found that the sensor with a thinner semiconducting film (330 nm) was more sensitive than the sensor with a thicker film (400 nm). The sensitivity was improved when the sensor was used at a lower frequency as compared with a high frequency. It is assumed that the humidity response of the sensors is associated with absorption of water vapors and doping of water molecules in the semiconductor blend layer. This had been proven by simulation of the capacitance-humidity relationship. (semiconductor devices)

In Situ High-Level Nitrogen Doping into Carbon Nanospheres and Boosting of Capacitive Charge Storage in Both Anode and Cathode for a High-Energy 4.5 V Full-Carbon Lithium-Ion Capacitor.

Science.gov (United States)

Sun, Fei; Liu, Xiaoyan; Wu, Hao Bin; Wang, Lijie; Gao, Jihui; Li, Hexing; Lu, Yunfeng

2018-05-02

To circumvent the imbalances of electrochemical kinetics and capacity between Li + storage anodes and capacitive cathodes for lithium-ion capacitors (LICs), we herein demonstrate an efficient solution by boosting the capacitive charge-storage contributions of carbon electrodes to construct a high-performance LIC. Such a strategy is achieved by the in situ and high-level doping of nitrogen atoms into carbon nanospheres (ANCS), which increases the carbon defects and active sites, inducing more rapidly capacitive charge-storage contributions for both Li + storage anodes and PF 6 - storage cathodes. High-level nitrogen-doping-induced capacitive enhancement is successfully evidenced by the construction of a symmetric supercapacitor using commercial organic electrolytes. Coupling a pre-lithiated ANCS anode with a fresh ANCS cathode enables a full-carbon LIC with a high operating voltage of 4.5 V and high energy and power densities thereof. The assembled LIC device delivers high energy densities of 206.7 and 115.4 Wh kg -1 at power densities of 0.225 and 22.5 kW kg -1 , respectively, as well as an unprecedented high-power cycling stability with only 0.0013% capacitance decay per cycle within 10 000 cycles at a high power output of 9 kW kg -1 .

Non-contact current and voltage sensing method using a clamshell housing and a ferrite cylinder

Science.gov (United States)

Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael

2016-04-26

A method of measurement using a detachable current and voltage sensor provides an isolated and convenient technique for to measuring current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

On the Modeling of a MEMS Based Capacitive Accelerometer for Measurement of Tractor Seat Vibration

Directory of Open Access Journals (Sweden)

M. Alidoost

2010-04-01

Full Text Available Drivers of heavy vehicles often face with higher amplitudes of frequencies range between 1-80 Hz. Hence, this range of frequency results in temporary or even sometimes permanent damages to the health of drivers. Examples for these problems are damages to the vertebral column and early tiredness, which both reduce the driver’s performance significantly. One solution to this problem is to decrease the imposed vibration to the driver’s seat by developing an active seat system. These systems require an online measuring unit to sense vibrations transferred to the seat. The measuring unit can include a capacitive micro-accelerometer on the basis of MEMS which measure online vibrations on the seat. In this study, the mechanical behavior of a capacitive micro-accelerometer for the vibration range applied to a tractor seat has been simulated. The accelerometer is capable to measure step, impact and harmonic external excitations applied to the system. The results of the study indicate that, with increasing the applied voltage, the system sensitivity also increases, but the measuring range of vibrations decreases and vice versa. The modeled accelerometer, at damping ratio of 0.67 is capable to measure accelerations within the frequency range of lower than 130 Hz.

High voltage systems

International Nuclear Information System (INIS)

Martin, M.

1991-01-01

Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

International Nuclear Information System (INIS)

Su Shi; Liao Xiaoping

2009-01-01

This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide (CPW) transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit (MMIC) process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43 μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.

Regulation of capacitative and non-capacitative Ca2+ entry in A7r5 vascular smooth muscle cells

Directory of Open Access Journals (Sweden)

COLIN W TAYLOR

2004-01-01

Full Text Available A capacitative Ca2+ entry (CCE pathway, activated by depletion of intracellular Ca2+ stores, is thought to mediate much of the Ca2+ entry evoked by receptors that stimulate phospholipase C (PLC. However, in A7r5 vascular smooth muscle cells, vasopressin, which stimulates PLC, empties intracellular Ca2+ stores but simultaneously inhibits their ability to activate CCE. The diacylglycerol produced with the IP3 that empties the stores is metabolized to arachidonic and this leads to activation of nitric oxide (NO synthase, production of NO and cyclic GMP, and consequent activation of protein kinase G. The latter inhibits CCE. In parallel, NO directly activates a non-capacitative Ca2+ entry (NCCE pathway, which is entirely responsible for the Ca2+ entry that occurs in the presence of vasopressin. This reciprocal regulation of two Ca2+ entry pathways ensures that there is sequential activation of first NCCE in the presence of vasopressin, and then a transient activation of CCE when vasopressin is removed. We suggest that the two routes for Ca2+ entry may selectively direct Ca2+ to processes that mediate activation and then recovery of the cell.

Impact of cell-voltage on energy and power performance of supercapacitors with single-walled carbon nanotube electrodes

Energy Technology Data Exchange (ETDEWEB)

Izadi-Najafabadi, Ali; Yamada, Takeo; Futaba, Don N.; Iijima, Sumio [Nanotube Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba (Japan); Hatori, Hiroaki [Project Headquarters, National Institute of Advanced Industrial Science and Technology, Tsukuba (Japan); Hata, Kenji [Japan Science and Technology Agency JST, Kawaguchi (Japan)

2010-12-15

We report the energy and power voltage-dependencies of supercapacitors using single-walled carbon nanotube electrodes. The energy density was dependent on the cell-voltage cubed (up to 4 V: E = 1.43 x V{sup 3}). The cubic relationship was attributed to the linear increase of the capacitance as a function of voltage, enabled by electrochemical doping. Furthermore, while up to 3.5 V, the maximum power rating of the nanotube electrodes increased as a function of the cell-voltage squared, beyond 3.5 V, a decline in power was observed as a result of depletion of the electrolyte's ions. (author)

An interleaved structure for a high-voltage planar transformer for a Travelling-wave Tube

DEFF Research Database (Denmark)

Zhao, Bin; Wang, Gang; Hurley, William G.

2016-01-01

Fully interleaved structure can significantly reduce leakage inductance in transformers, However， it is hard to apply them into high-voltage applications due to the electric insulation. In this paper, a partially interleaved structure that is suitable for high-voltage high frequency applications...... is proposed to reduce leakage inductance and the insulation’s thickness is adjusted to optimize the electric isolation. In addition, the resistance and parasitic capacitance are investigated. With this method, a planar transformer used for a Travelling-Wave Tube Amplifier (TWTA) is designed. Calculations...

Development of parallel-plate-based MEMS tunable capacitors with linearized capacitance–voltage response and extended tuning range

International Nuclear Information System (INIS)

Shavezipur, M; Nieva, P; Khajepour, A; Hashemi, S M

2010-01-01

This paper presents a design technique that can be used to linearize the capacitance–voltage (C–V) response and extend the tuning range of parallel-plate-based MEMS tunable capacitors beyond that of conventional designs. The proposed technique exploits the curvature of the capacitor's moving electrode which could be induced by either manipulating the stress gradients in the plate's material or using bi-layer structures. The change in curvature generates a nonlinear structural stiffness as the moving electrode undergoes out-of-plane deformation due to the actuation voltage. If the moving plate curvature is tailored such that the capacitance increment is proportional to the voltage increment, then a linear C–V response is obtained. The larger structural resistive force at higher bias voltage also delays the pull-in and increases the maximum tunability of the capacitor. Moreover, for capacitors containing an insulation layer between the two electrodes, the proposed technique completely eliminates the pull-in effect. The experimental data obtained from different capacitors fabricated using PolyMUMPs demonstrate the advantages of this design approach where highly linear C–V responses and tunabilities as high as 1050% were recorded. The design methodology introduced in this paper could be easily extended to for example, capacitive pressure and temperature sensors or infrared detectors to enhance their response characteristics.

A novel 3D detector configuration enabling high quantum efficiency, low crosstalk, and low output capacitance

International Nuclear Information System (INIS)

Aurola, A.; Marochkin, V.; Tuuva, T.

2016-01-01

The benefits of pixelated planar direct conversion semiconductor radiation detectors comprising a thick fully depleted substrate are that they offer low crosstalk, small output capacitance, and that the planar configuration simplifies manufacturing. In order to provide high quantum efficiency for high energy X-rays and Gamma-rays such a radiation detector should be as thick as possible. The maximum thickness and thus the maximum quantum efficiency has been limited by the substrate doping concentration: the lower the substrate doping the thicker the detector can be before reaching the semiconductor material's electric breakdown field. Thick direct conversion semiconductor detectors comprising vertical three-dimensional electrodes protruding through the substrate have been previously proposed by Sherwood Parker in order to promote rapid detection of radiation. An additional advantage of these detectors is that their thickness is not limited by the substrate doping, i.e., the size of the maximum electric field value in the detector does not depend on detector thickness. However, the thicker the substrate of such three dimensional detectors is the larger the output capacitance is and thus the larger the output noise is. In the novel direct conversion pixelated radiation detector utilizing a novel three dimensional semiconductor architecture, which is proposed in this work, the detector thickness is not limited by the substrate doping and the output capacitance is small and does not depend on the detector thickness. In addition, by incorporating an additional node to the novel three-dimensional semiconductor architecture it can be utilized as a high voltage transistor that can deliver current across high voltages. Furthermore, it is possible to connect a voltage difference of any size to the proposed novel three dimensional semiconductor architecture provided that it is thick enough—this is a novel feature that has not been previously possible for semiconductor

Improved capacitive melting curve measurements

International Nuclear Information System (INIS)

Sebedash, Alexander; Tuoriniemi, Juha; Pentti, Elias; Salmela, Anssi

2009-01-01

Sensitivity of the capacitive method for determining the melting pressure of helium can be enhanced by loading the empty side of the capacitor with helium at a pressure nearly equal to that desired to be measured and by using a relatively thin and flexible membrane in between. This way one can achieve a nanobar resolution at the level of 30 bar, which is two orders of magnitude better than that of the best gauges with vacuum reference. This extends the applicability of melting curve thermometry to lower temperatures and would allow detecting tiny anomalies in the melting pressure, which must be associated with any phenomena contributing to the entropy of the liquid or solid phases. We demonstrated this principle in measurements of the crystallization pressure of isotopic helium mixtures at millikelvin temperatures by using partly solid pure 4 He as the reference substance providing the best possible universal reference pressure. The achieved sensitivity was good enough for melting curve thermometry on mixtures down to 100 μK. Similar system can be used on pure isotopes by virtue of a blocked capillary giving a stable reference condition with liquid slightly below the melting pressure in the reference volume. This was tested with pure 4 He at temperatures 0.08-0.3 K. To avoid spurious heating effects, one must carefully choose and arrange any dielectric materials close to the active capacitor. We observed some 100 pW loading at moderate excitation voltages.

A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

International Nuclear Information System (INIS)

Wu Dake; Huang Ru; Wang Pengfei; Tang Poren; Wang Yangyuan

2008-01-01

In this paper, a low-voltage recessed channel SONOS flash memory using the gate-injection program/erase method is proposed and investigated for NAND application. It is shown that the proposed flash memory can achieve 8 V lower programming voltage compared with planar flash memory, due to the effective capacitance coupling and the electric-field enhancement by combining the recessed channel structure and the gate-injection program/erase method. In addition, more than 30% larger threshold voltage window and improved short channel effects can be obtained in the proposed flash memory

Role of parasitic capacitances in power MOSFET turn-on switching speed limits

DEFF Research Database (Denmark)

Cittanti, Davide; Iannuzzo, Francesco; Hoene, Eckart

2017-01-01

This paper describes the effect of MOSFET internal capacitances on the channel current during the turn-on switching transition: an intrinsic theoretical switching speed limit is found and detailed mathematically. The set of analytical equations is solved and the effect of the displacement currents...... is highlighted with ideal simulated waveforms. A laboratory experiment is thus performed, in order to prove the theoretical predictions: a 25 mΩ SiC CREE power MOSFET is turned on in a no-load condition (zero drain current), starting from different drain-source voltage values. Finally, a LTSpice equivalent...

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

Science.gov (United States)

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-12-14

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

Science.gov (United States)

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-01-01

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

Development of Flexible Capacitive Ultrasound Transducers and the Use of Ultrasound for Bone Repair

Science.gov (United States)

Wentzell, Scott A.

Ultrasound is a widely applicable technique for therapy in the biomedical arena. However, conventional ultrasound transducers are not conducive for non-planar surfaces. Therefore, we developed flexible transducers capable of performing ultrasound and evaluated their use in biomedical applications. Flexible capacitive ultrasound transducers based on micrometer-thick dielectric tapes were developed and fabricated. These transducers were able to be made by hand at low-cost while still demonstrating good tolerances in center operating frequency. Intensities of up to 120 mW/cm2 were recorded and operation was dependent upon the applied AC and DC voltages along with the thickness of the dielectric insulation. These capacitive ultrasound transducers were used to stimulate MC3T3-E1 murine osteoblast cells to investigate the effects of low-frequency ultrasound on osteogenic gene expression and anabolic signaling pathways. After stimulation by 94.5 kHz continuous wave ultrasound for 20 minutes, significant increases in the activation of the Wnt signaling pathway and concentration of intracellular calcium were observed. Daily stimulation by ultrasound showed a trend of increased osteogenic gene expression across the phases of matrix deposition, maturation and calcification by osteoblasts. Finally, the heating of osteoblasts for stimulating osteoclastogenic responses was investigated. The application of increased temperatures of 42 and 47 degrees Celsius for 5 minutes showed significant increases in the RANKL/OPG ratio in media conditioned by osteoblasts. However, the altered RANKL/OPG ratio was not able to generate increases in osteoclastogenesis for RAW 264.7 murine macrophage cells culture in the condition media. This was possibly due to high overall osteoprotegerin expression, or unwanted inducement of M1 and M2 macrophage activation in the cell population. The overall work of this thesis demonstrates the development of novel capacitive transducers. These conformable

60Co gamma irradiation effects on the the capacitance and conductance characteristics of Au/PMI/n-Si Schottky diodes

Science.gov (United States)

Tuğluoğlu, N.; Karadeniz, S.; Yüksel, Ö. F.; Şafak, H.; Kuş, M.

2015-08-01

In this work, the perylene-monoimide/n-Si (100) Schottky structures have been fabricated by spin coating process. We have studied the capacitance-voltage ( C- V) and conductance-voltage ( G- V) characteristics of the Au/perylene-monoimide/n-Si diodes at 500 kHz before and after 60Co γ-ray irradiation. The effects of 60Co γ -ray irradiation on the electrical characteristics of a perylene-monoimide/n-Si Schottky diode have been investigated. A decrease both in the capacitance and conductance has been observed after 60Co γ -ray irradiation. This has been attributed to a decrease in the net ionized dopant concentration that occurred as a result of 60Co γ-ray irradiation. Some contact parameters such as barrier height (Φ B ) interface state density ( N ss ) and series resistance ( R s ) have been calculated from the C- V and G- V characteristics of the diode before and after irradiation. It has been observed that the Φ B and N ss values are decreased after the applied radiation, while the R s value is increased.

Aspheric surface measurement using capacitive probes

Science.gov (United States)

Tao, Xin; Yuan, Daocheng; Li, Shaobo

2017-02-01

With the application of aspheres in optical fields, high precision and high efficiency aspheric surface metrology becomes a hot research topic. We describe a novel method of non-contact measurement of aspheric surface with capacitive probe. Taking an eccentric spherical surface as the object of study, the averaging effect of capacitive probe measurement and the influence of tilting the capacitive probe on the measurement results are investigated. By comparing measurement results from simultaneous measurement of the capacitive probe and contact probe of roundness instrument, this paper indicates the feasibility of using capacitive probes to test aspheric surface and proposes the compensation method of measurement error caused by averaging effect and the tilting of the capacitive probe.

Effects of heat treatment on the hierarchical porous structure and electro-capacitive properties of RuO{sub 2}/activated carbon nanofiber composites

Energy Technology Data Exchange (ETDEWEB)

Jun, Ye Ri; Kim, Bo Hye [Div. of Science Education, Chemistry Education Major, Daegu University, Daegu (Korea, Republic of)

2016-11-15

Electrochemical capacitors based on hierarchical porous activated carbon nanofiber (RuO{sub 2} /ACNF) composites are fabricated by one-step electrospinning, and then stabilized at different activation temperatures. The effect of the activation temperature on the structural properties and electrochemical behavior of the RuO{sub 2} /ACNF composites is intensively investigated in 6 M KOH electrolyte. The RuO{sub 2} /ACNF-800 composites activated at high temperature possess abundant mesopores and larger pores, which improve the electrochemical performance, especially at high charge–discharge rates. The energy storage capabilities of the RuO{sub 2} /ACNF-800 electrode prepared at high temperature are as follows: a maximum specific capacitance of 150 F/g and an energy density of 14–20 Wh/kg in the respective power density range of 400 to 10 000 W/kg in an aqueous solution. Furthermore, this electrode exhibits high-rate electrochemical performance with a specific capacitance reduction of less than 28% of the initial value at a discharge current of 20 mA/cm{sup 2}. Therefore, the hierarchical porous RuO{sub 2} /ACNF composites with well-developed mesoporous structure provide low resistance for charge diffusion and a short pathway for ion transportation, yielding good capacitive behavior.

Nonlinear Impedance of Whole Cells Near an Electrode as a Probe of Mitochondrial Activity

Directory of Open Access Journals (Sweden)

John H. Miller Jr.

2011-04-01

Full Text Available By simultaneously measuring the bulk media and electrode interface voltages of a yeast (Saccharomyces cerevisiae suspension subjected to an AC voltage, a yeast-dependent nonlinear response was found only near the current injection electrodes. Computer simulation of yeast near a current injection electrode found an enhanced voltage drop across the yeast near the electrode due to slowed charging of the electrode interfacial capacitance. This voltage drop is sufficient to induce conformation change in membrane proteins. Disruption of the mitochondrial electron transport chain is found to significantly change the measured nonlinear current response, suggesting nonlinear impedance can be used as a non-invasive probe of cellular metabolic activity.

Non-contact current and voltage sensor having detachable housing incorporating multiple ferrite cylinder portions

Science.gov (United States)

Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael A.

2016-04-26

A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing formed from two portions that mechanically close around the wire and that contain the current and voltage sensors. The current sensor is a ferrite cylinder formed from at least three portions that form the cylinder when the sensor is closed around the wire with a hall effect sensor disposed in a gap between two of the ferrite portions along the circumference to measure current. A capacitive plate or wire is disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

Voltage-dependent gating in a "voltage sensor-less" ion channel.

Directory of Open Access Journals (Sweden)

Harley T Kurata

2010-02-01

Full Text Available The voltage sensitivity of voltage-gated cation channels is primarily attributed to conformational changes of a four transmembrane segment voltage-sensing domain, conserved across many levels of biological complexity. We have identified a remarkable point mutation that confers significant voltage dependence to Kir6.2, a ligand-gated channel that lacks any canonical voltage-sensing domain. Similar to voltage-dependent Kv channels, the Kir6.2[L157E] mutant exhibits time-dependent activation upon membrane depolarization, resulting in an outwardly rectifying current-voltage relationship. This voltage dependence is convergent with the intrinsic ligand-dependent gating mechanisms of Kir6.2, since increasing the membrane PIP2 content saturates Po and eliminates voltage dependence, whereas voltage activation is more dramatic when channel Po is reduced by application of ATP or poly-lysine. These experiments thus demonstrate an inherent voltage dependence of gating in a "ligand-gated" K+ channel, and thereby provide a new view of voltage-dependent gating mechanisms in ion channels. Most interestingly, the voltage- and ligand-dependent gating of Kir6.2[L157E] is highly sensitive to intracellular [K+], indicating an interaction between ion permeation and gating. While these two key features of channel function are classically dealt with separately, the results provide a framework for understanding their interaction, which is likely to be a general, if latent, feature of the superfamily of cation channels.

Functionalized Ga2O3 nanowires as active material in room temperature capacitance-based gas sensors.

Science.gov (United States)

Mazeina, Lena; Perkins, F Keith; Bermudez, Victor M; Arnold, Stephen P; Prokes, S M

2010-08-17

We report the first evidence for functionalization of Ga(2)O(3) nanowires (NWs), which have been incorporated as the active material in room temperature capacitance gas-sensing devices. An adsorbed layer of pyruvic acid (PA) was successfully formed on Ga(2)O(3) NWs by simple room temperature vapor transport, which was confirmed by Fourier transform infrared spectroscopy. The effect of the adsorbed PA on the surface properties was demonstrated by the change in the response of the NW gas-sensing devices. Results indicate that the adsorption of PA reduced the sensitivity of the Ga(2)O(3) NW device to common hydrocarbons such as nitromethane and acetone while improving the response to triethylamine by an order of magnitude. Taking into account the simplicity of this functionalization together with the ease of producing these capacitance-based gas-sensing devices, this approach represents a viable technique for sensor development.

Active gate driver for dv/dt control and active voltage clamping in an IGBT stack

DEFF Research Database (Denmark)

Rasmussen, Tonny Wederberg

2005-01-01

For high voltages converters stacks of IGBTs can be used if the static and dynamic voltage sharing among the IGBTs can be applied. dVCE/dt should also be controlled in order not to damage insulation material. This paper describes theory and measurements of an active gate driver for stacking IGBTs....... For the measurements two series connected standard IGBTs made for hard switching applications are used. Problems are shown and proposals for improvements are given....

Influence of coupling parameter on current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

International Nuclear Information System (INIS)

Shukrinov, Yu.M.; Mahfouzi, F.

2006-01-01

We study the current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors by numerical calculations and in framework of capacitively coupled Josephson junctions model we obtain the total number of branches. The influence of the coupling parameter α on the current-voltage characteristics at fixed parameter β (β 2 1/β c , where β c is McCumber parameter) and the influence of α on β-dependence of the current-voltage characteristics are investigated. We obtain the α-dependence of the branch's slopes and branch's endpoints. The presented results show new features of the coupling effect on the scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

Simulation of dust particles in dual-frequency capacitively coupled silane discharges

International Nuclear Information System (INIS)

Liu Xiangmei; Song Yuanhong; Xu Xiang; Wang Younian

2010-01-01

The behavior of nanoparticles in dual-frequency capacitively coupled silane discharges is investigated by employing a one-dimensional self-consistent fluid model. The numerical simulation tries to trace the formation, charging, growth, and transport of dust particles during the discharge, under the influences of the high- and low-frequency electric sources, as well as the gas pressure. The effects of the presence of the nanoparticles and larger anions on the plasma properties are also discussed, especially, for the bulk potential, electron temperature, and densities of various particles. The calculation results show that the nanoparticle density and charge distribution are mainly influenced by the voltage and frequency of the high-frequency source, while the voltage of the low-frequency source can also exert an effect on the nanoparticle formation, compared with the frequency. As the discharge lasts, the electric potential and electron density keep decreasing, while the electron temperature gets increasing after a sudden drop.

High voltage diagnostics on electrical insulation of supersonducting magnets

International Nuclear Information System (INIS)

Irmisch, M.

1995-12-01

The high voltage (HV) performance of superconducting magnets of large dimensions, e.g. as needed in fusion reactors, is a challange in the field of high voltage technology, i.e. especially in the field of cryogenic high voltage components and with respect to questions of HV insulation diagnostics at low temperature. By using the development of POLO - a superconducting prototype coil of a tokamak poloidal field coil - as an example, this work deals with special problems of how to get use of conventional HV test techniques for diagnostics under special cryogenic boundary conditions. As a first approach to gain experience in the field of phase resolved partial discharge (PRPD) measurements during operation of a superconductive coil, the POLO coil was subject to several high voltage tests. Compared with DC insulation resistance measurements and capacitive impulse voltage discharges to the coil, the AC PD measurements have been the only way to observe special characteristics of the electrical insulation with respect to the cooling down of the coil from 300 K to 4.2 K. The PRPD measurement technique thereby has proofed as a suitable diagnostic tool. This work can serve as basic data to be comparable within further projects of electrical insulation diagnostics at cryogenic temperatures. (orig.)

Integration of 100% Micro-Distributed Energy Resources in the Low Voltage Distribution Network

DEFF Research Database (Denmark)

You, Shi; Segerberg, Helena

2014-01-01

of heat pumps (HPs) and plug-in electric vehicles (PEVs) at 100% penetration level on a representative urban residential low voltage (LV) distribution network of Denmark are investigated by performing a steady-state load flow analysis through an integrated simulation setup. Three DERs integration...... oriented integration strategies, having 100% integration of DER in the provided LV network is feasible.......The existing electricity infrastructure may to a great extent limit a high penetration of the micro-sized Distributed Energy Resources (DERs), due to the physical bottlenecks, e.g. thermal capacitates of cables, transformers and the voltage limitations. In this study, the integration impacts...

Approximate calculus of the auto transformers and power transformers capacitances; Calculo aproximado de las capacitancias de autotransformadores y transformadores de potencia

Energy Technology Data Exchange (ETDEWEB)

Carrasco, Gustavo [C.V.G. Electrificacion del Caroni, C.A. (EDELCA), Caracas (Venezuela)]. E-mail: gcarrasco@edelca.com.ve

2001-07-01

This paper develops a mathematical relation for the approximated calculus of the capacitances of the EDELCA power transformers and auto transformers. This mathematical relation is based on the type of transformers construction (Nucleus and shell type), the dielectric properties of the internal insulation material and the electric parameters (Voltage and power)

Exploiting the spontaneous potential of the electrodes used in the capacitive mixing technique for the extraction of energy from salinity difference

NARCIS (Netherlands)

Brogioli, D.; Ziano, R.; Rica, R.A.; Salerno, D.; Kozynchenko, O.; Hamelers, H.V.M.; Mantegazza, F.

2012-01-01

The "capacitive mixing" (CAPMIX) technique is aimed at the extraction of energy from the salinity difference between the sea and rivers. It is based on the voltage rise that takes place at the electrodes when changing the salt concentration of the solution in which the two electrodes are dipped. In

Analysis, Design and Implementation of a Quasi-Proportional-Resonant Controller for a Multifunctional Capacitive-Coupling Grid-Connected Inverter

DEFF Research Database (Denmark)

Ye, Tao; Dai, Ning-Yi; Lam, Chi-Seng

2016-01-01

to compensate reactive power and transfer active power simultaneously. It is a promising solution for micro-grid and building-integrated distributed generator systems. A quasiproportional- resonant (quasi-PR) controller is applied to reduce steady-state current tracking errors of the CGCI in this paper......The capacitive-coupling grid-connected inverter (CGCI) is coupled to the point of common coupling via a second-order LC branch. Its operational voltage is much lower than that of a conventional inductive-coupling grid-connected inverter (IGCI) when it serves as a multifunctional inverter...... tracking errors are greatly reduced when the quasi-PR controller rather than the proportional-integration controller is applied. Experimental results are also provided to validate the CGCI as a multifunctional grid-connected inverter....

Complementary surface charge for enhanced capacitive deionization

NARCIS (Netherlands)

Gao, X.; Porada, S.; Omosebi, A.; Liu, K.L.; Biesheuvel, P.M.; Landon, J.

2016-01-01

Commercially available activated carbon cloth electrodes are treated using nitric acid and ethylenediamine solutions, resulting in chemical surface charge enhanced carbon electrodes for capacitive deionization (CDI) applications. Surface charge enhanced electrodes are then configured in a CDI

Electronic Current Transducer (ECT) for high voltage dc lines

Science.gov (United States)

Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

1980-02-01

The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

Active Power Filter DC Bus Voltage Piecewise Reaching Law Variable Structure Control

Directory of Open Access Journals (Sweden)

Baolian Liu

2014-01-01

Full Text Available The DC bus voltage stability control is one key technology to ensure that Active Power Filter (APF operates stably. The external disturbances such as power grid and load fluctuation and the system parameters changing may affect the stability of APF DC bus voltage and the normal operation of APF. The mathematical model of DC bus voltage is established according to power balance principle and a DC bus voltage piecewise reaching law variable structure control algorithm is proposed to solve the above problem, and the design method is given. The simulation and experiment results proved that the proposed variable structure control algorithm can eliminate the chattering problem existing in traditional variable structure control effectively, is insensitive to system disturbance, and has good robustness and fast dynamic response speed and stable DC bus voltage with small fluctuation. The above advantages ensure the compensation effect of APF.

Double resonance capacitance spectroscopy (DORCAS): A new experimental technique for assignment of X-ray absorption peaks to surface sites of semiconductor

CERN Document Server

Ishii, M

2003-01-01

As a new microspectroscopy for semiconductor surface analysis using an X-ray beam, double resonance capacitance spectroscopy (DORCAS) is proposed. For a microscopic X-ray absorption measurement, a local capacitance change owing to X-ray induced emission of localized electrons is detected by a microprobe. The applied bias voltage V sub b dependence of the capacitance also provides information on the surface density of state. The resonance of the Fermi energy with a surface level by V sub b control makes possible the selection of the observable surface site in the X-ray absorption measurements, i.e. site-specific spectroscopy. The double resonance of the surface site selection (V sub b resonance) and the resonant X-ray absorption of the selected site (photon energy h nu resonance) enhances the capacitance signal. The DORCAS measurement of the GaAs surface shows correlation peaks at h nu=10.402 keV and V sub b =-0.4 V and h nu=10.429 keV and V sub b =+0.1 V, indicating that these resonant X-ray absorption peaks ...

Electron heating in low pressure capacitive discharges revisited

Energy Technology Data Exchange (ETDEWEB)

Kawamura, E.; Lieberman, M. A.; Lichtenberg, A. J. [Department of Electrical Engineering and Computer Sciences University of California, Berkeley, California 94720 (United States)

2014-12-15

The electrons in capacitively coupled plasmas (CCPs) absorb energy via ohmic heating due to electron-neutral collisions and stochastic heating due to momentum transfer from high voltage moving sheaths. We use Particle-in-Cell (PIC) simulations to explore these heating mechanisms and to compare the PIC results with available theories on ohmic and stochastic heating. The PIC results for ohmic heating show good agreement with the ohmic heating calculation of Lafleur et al. [Phys. Plasmas 20, 124503 (2013)]. The PIC results for stochastic heating in low pressure CCPs with collisionless sheaths show good agreement with the stochastic heating model of Kaganovich et al. [IEEE Trans. Plasma Sci. 34, 696 (2006)], which revises the hard wall asymptotic model of Lieberman [IEEE Trans. Plasma Sci. 16, 638 (1988)] by taking current continuity and bulk oscillation into account.

Electron heating in low pressure capacitive discharges revisited

International Nuclear Information System (INIS)

Kawamura, E.; Lieberman, M. A.; Lichtenberg, A. J.

2014-01-01

The electrons in capacitively coupled plasmas (CCPs) absorb energy via ohmic heating due to electron-neutral collisions and stochastic heating due to momentum transfer from high voltage moving sheaths. We use Particle-in-Cell (PIC) simulations to explore these heating mechanisms and to compare the PIC results with available theories on ohmic and stochastic heating. The PIC results for ohmic heating show good agreement with the ohmic heating calculation of Lafleur et al. [Phys. Plasmas 20, 124503 (2013)]. The PIC results for stochastic heating in low pressure CCPs with collisionless sheaths show good agreement with the stochastic heating model of Kaganovich et al. [IEEE Trans. Plasma Sci. 34, 696 (2006)], which revises the hard wall asymptotic model of Lieberman [IEEE Trans. Plasma Sci. 16, 638 (1988)] by taking current continuity and bulk oscillation into account

Electron heating in low pressure capacitive discharges revisited

Science.gov (United States)

Kawamura, E.; Lieberman, M. A.; Lichtenberg, A. J.

2014-12-01

The electrons in capacitively coupled plasmas (CCPs) absorb energy via ohmic heating due to electron-neutral collisions and stochastic heating due to momentum transfer from high voltage moving sheaths. We use Particle-in-Cell (PIC) simulations to explore these heating mechanisms and to compare the PIC results with available theories on ohmic and stochastic heating. The PIC results for ohmic heating show good agreement with the ohmic heating calculation of Lafleur et al. [Phys. Plasmas 20, 124503 (2013)]. The PIC results for stochastic heating in low pressure CCPs with collisionless sheaths show good agreement with the stochastic heating model of Kaganovich et al. [IEEE Trans. Plasma Sci. 34, 696 (2006)], which revises the hard wall asymptotic model of Lieberman [IEEE Trans. Plasma Sci. 16, 638 (1988)] by taking current continuity and bulk oscillation into account.

Capacitance of circular patch resonator

International Nuclear Information System (INIS)

Miano, G.; Verolino, L.; Naples Univ.; Panariello, G.; Vaccaro, V.G.; Naples Univ.

1995-11-01

In this paper the capacitance of the circular microstrip patch resonator is computed. It is shown that the electrostatic problem can be formulated as a system of dual integral equations, and the most interesting techniques of solutions of these systems are reviewed. Some useful approximated formulas for the capacitance are derived and plots of the capacitance are finally given in a wide range of dielectric constants

MEMS variable capacitance devices utilizing the substrate: II. Zipping varactors

KAUST Repository

Elshurafa, Amro M.

2010-03-22

This paper, the second and last in this series, introduces PolyMUMPS zipping varactors that exploit the substrate and provide a high tuning range and a high quality factor. Building on the important findings of part I of this paper, the substrate was utilized effectively once again in the design and fabrication of zipping varactors to attain devices with very good performance. Two zipping varactors are proposed, analysed theoretically, simulated, fabricated and tested successfully. The tuning range, quality factor and actuation voltage of those varactors are 4.5, 16.4, 55 V and 4.2, 17, 55 V respectively. Finally, and based on one of the proposed zipping varactors, a very large capacitance value varactor array, with a tuning range of 5.3, was designed and tested. To the best of our knowledge, these zipping varactors exhibit the best reported characteristics in PolyMUMPS to date within their category in terms of tuning range, quality factor, required actuation voltage and total area consumed. © 2010 IOP Publishing Ltd.

Effect of activated carbon and electrolyte on properties of supercapacitor

Institute of Scientific and Technical Information of China (English)

无

2007-01-01

Effect of activated carbon and electrolyte on electrochemical properties of organic supercapacitor was investigated. The results show that specific surface area and mesoporosity of activated carbon influence specific capacitance. If specific surface area is larger and mesoporosity is higher, the specific capacitance will become bigger. Specific surface area influences resistance of carbon electrode and consequently influences power property and pore size distribution. If specific surface area is smaller and mesoporosity is higher, the power property will become better. Ash influences leakage current and electrochemical cycling stability. If ash content is lower, the performance will become better. The properties of supercapacitor highly depend on the electrolyte. The compatibility of electrolyte and activated carbon is a determining factor of supercapacitor's working voltage. LiPF6/(EC+EMC+DMC) is inappropriate for double layer capacitor. MeEt3NPF4/PC has higher specific capacitance than EtnNPFn/PC because methyl's electronegativity value is lower than ethyl and MeEt3N+ has more positive charges and stronger polarizability than Et4N+ when an ethyl is substituted by methyl.

A miniature electrical capacitance tomograph

Science.gov (United States)

York, T. A.; Phua, T. N.; Reichelt, L.; Pawlowski, A.; Kneer, R.

2006-08-01

The paper describes a miniature electrical capacitance tomography system. This is based on a custom CMOS silicon integrated circuit comprising eight channels of signal conditioning electronics to source drive signals and measure voltages. Electrodes are deposited around a hole that is fabricated, using ultrasonic drilling, through a ceramic substrate and has an average diameter of 0.75 mm. The custom chip is interfaced to a host computer via a bespoke data acquisition system based on a microcontroller, field programmable logic device and wide shift register. This provides fast capture of up to 750 frames of data prior to uploading to the host computer. Data capture rates of about 6000 frames per second have been achieved for the eight-electrode sensor. This rate could be increased but at the expense of signal to noise. Captured data are uploaded to a PC, via a RS232 interface, for off-line imaging. Initial tests are reported for the static case involving 200 µm diameter rods that are placed in the sensor and for the dynamic case using the dose from an inhaler.

Chloride Anions Regulate Kinetics but Not Voltage-Sensor Qmax of the Solute Carrier SLC26a5.

Science.gov (United States)

Santos-Sacchi, Joseph; Song, Lei

2016-06-07

In general, SLC26 solute carriers serve to transport a variety of anions across biological membranes. However, prestin (SLC26a5) has evolved, now serving as a motor protein in outer hair cells (OHCs) of the mammalian inner ear and is required for cochlear amplification, a mechanical feedback mechanism to boost auditory performance. The mechanical activity of the OHC imparted by prestin is driven by voltage and controlled by anions, chiefly intracellular chloride. Current opinion is that chloride anions control the Boltzmann characteristics of the voltage sensor responsible for prestin activity, including Qmax, the total sensor charge moved within the membrane, and Vh, a measure of prestin's operating voltage range. Here, we show that standard narrow-band, high-frequency admittance measures of nonlinear capacitance (NLC), an alternate representation of the sensor's charge-voltage (Q-V) relationship, is inadequate for assessment of Qmax, an estimate of the sum of unitary charges contributed by all voltage sensors within the membrane. Prestin's slow transition rates and chloride-binding kinetics adversely influence these estimates, contributing to the prevalent concept that intracellular chloride level controls the quantity of sensor charge moved. By monitoring charge movement across frequency, using measures of multifrequency admittance, expanded displacement current integration, and OHC electromotility, we find that chloride influences prestin kinetics, thereby controlling charge magnitude at any particular frequency of interrogation. Importantly, however, this chloride dependence vanishes as frequency decreases, with Qmax asymptoting at a level irrespective of the chloride level. These data indicate that prestin activity is significantly low-pass in the frequency domain, with important implications for cochlear amplification. We also note that the occurrence of voltage-dependent charge movements in other SLC26 family members may be hidden by inadequate

Strongly capacitively coupled double quantum dots in GaAs-AlGaAs heterostructures. Preparation and electrical transport; Kapazitativ stark gekoppelte Doppelquantenpunkte in GaAs-AlGaAs-Heterostrukturen. Herstellung und elektrischer Transport

Energy Technology Data Exchange (ETDEWEB)

Huebel, A.

2007-11-22

In this work, a double quantum dot system is studied whose two dots are electrically insulated from one another and contacted independently with two leads. The geometry is optimized to maximize the capacitive interaction between the dots. The samples are characterized by electrical transport measurements in a dilution refrigerator. It is then studied at different tunnel couplings how the capacitive interaction influences the electrical transport in equilibrium. Under certain conditions correlated tunnel processes can be observed. A simple model is derived that serves to understand these processes. The double quantum dot system is defined in lateral arrangement by reactive ion etching of a two-dimensional electron system located only 50 nm below the surface of a GaAs-AlGaAs heterostructure. The samples are characterized in a dilution refrigerator at 25 mK near the common pinch-off point of all four tunnel barriers. A measurement of the differential equilibrium conductances of both quantum dots as a function of two gate voltages yields a honeycomb-like charge stability diagram. The most important sample characteristic is the ratio between the interaction capacitance and the total capacitance of a single quantum dot. For the optimized sample, this ratio turns out to be larger than one third near the common pinch-off point, with a single-dot charging energy of up to 800 {mu}eV. At more positive gate voltages, the capacitances between the quantum dots and their leads increase more and more, thereby diminishing the charging energy. It is shown for the optimized sample that all capacitance coefficients except the dot-lead capacitances are constant to within considerable accuracy over several Coulomb blockade oscillations. In order to measure correlated electrical transport in equilibrium, special parameter regions are examined in which the charges of both quantum dots cannot fluctuate independently of each other. An analytical formula is derived that describes the

PEMBUATAN ELEKTRODA KARBON BERPORI DARI TEMPURUNG KEMIRI DAN PERANCANGAN PROTOTIPE SISTEM CAPACITIVE DEIONIZATION (CDI UNTUK DESALINASI AIR PAYAU

Directory of Open Access Journals (Sweden)

A. Astuti

2015-01-01

Full Text Available Telah dilakukan pembuatan karbon aktif dengan bahan dasar tempurung kemiri menggunakan H3PO4 2,5% sebagai aktivator dengan suhu aktivasi (400, 500, dan 600 oC.Luas permukaan aktif yang dihasilkan masing-masing adalah (6,6; 95,6; dan 391,6 m2/g. Karbon yang diaktivasi pada suhu 600 oC digunakan sebagai bahan dasar pembuatan elektroda kapasitor untuk system capacitive deionization (CDI menggunakan polimer polyvinyl alcohol (PVA sebaga ipengikat. Berdasarkan data voltammogram siklik terhadap elektroda CDI diperoleh besar kapasitansi spesifik elektroda adalah 50,21 mF/g.  Proses desalinasi dilakukan pada larutanNaCl 0,24 M dengan menyusun elektroda menggunakan system monopolar dan diberitegangan DC 1,2 V.  Penurunan konduktivitas larutan NaCl menggunakan sistem CDI ini sebesar 61,58%, dengan penurunan kadar natrium dalam larutan NaCl yaitu dari 138,0 mg/L menjadi 80,7 mg/L  selama 40 menit. Karbon aktif tempurung kemiri ini sangat potensial untuk dikembangkan sebagai elektroda CDI untuk sistem desalinasi air payau.The writers had done the research of the activated carbon that prepared with the candlenut shell by using H3PO4 2,5% as the activating agent.  All samples were heated at the temperatures of (400, 500, and 600 oC.  The activated carbon have specific surface area (6.582; 95.623; and 391.567 m2/g respectively. Capacitor electrode for capacitive deionization (CDI was fabricated by using activated carbon that was heated at activation temperature of 600 oC with polyvinyl alcohol (PVA as the binder. Based on cyclicvoltammogram of electrode, specific capacitance of CDI electrode is 50.21 mF/g.  To observe desalination process of electrode, CDI was made by monopolar system and immersed in NaCl 0.24 M as brackish water sample.  Direct current voltage 1.2 V was applied to CDI cell.  The decreased of NaCl conductivity with CDI system respectively is 61.58%.  Sodium concentration in NaCl decreases from 138.000 mg/L to 80.667 mg/Labout 40

Highly sensitive micromachined capacitive pressure sensor with reduced hysteresis and low parasitic capacitance

DEFF Research Database (Denmark)

Pedersen, Thomas; Fragiacomo, Giulio; Hansen, Ole

2009-01-01

This paper describes the design and fabrication of a capacitive pressure sensor that has a large capacitance signal and a high sensitivity of 76 pF/bar in touch mode operation. Due to the large signal, problems with parasitic capacitances are avoided and hence it is possible to integrate the sensor...... bonding to create vacuum cavities. The exposed part of the sensor is perfectly flat such that it can be coated with corrosion resistant thin films. Hysteresis is an inherent problem in touch mode capacitive pressure sensors and a technique to significantly reduce it is presented....... with a discrete components electronics circuit for signal conditioning. Using an AC bridge electronics circuit a resolution of 8 mV/mbar is achieved. The large signal is obtained due to a novel membrane structure utilizing closely packed hexagonal elements. The sensor is fabricated in a process based on fusion...

Theoretical investigation of phase-controlled bias effect in capacitively coupled plasma discharges

International Nuclear Information System (INIS)

Kwon, Deuk-Chul; Yoon, Jung-Sik

2011-01-01

We theoretically investigated the effect of phase difference between powered electrodes in capacitively coupled plasma (CCP) discharges. Previous experimental result has shown that the plasma potential could be controlled by using a phase-shift controller in CCP discharges. In this work, based on the previously developed radio frequency sheath models, we developed a circuit model to self-consistently determine the bias voltage from the plasma parameters. Results show that the present theoretical model explains the experimental results quite well and there is an optimum value of the phase difference for which the V dc /V pp ratio becomes a minimum.

Blue Energy and Desalination with Nanoporous Carbon Electrodes: Capacitance from Molecular Simulations to Continuous Models

Directory of Open Access Journals (Sweden)

Michele Simoncelli

2018-04-01

Full Text Available Capacitive mixing (CapMix and capacitive deionization (CDI are currently developed as alternatives to membrane-based processes to harvest blue energy—from salinity gradients between river and sea water—and to desalinate water—using charge-discharge cycles of capacitors. Nanoporous electrodes increase the contact area with the electrolyte and hence, in principle, also the performance of the process. However, models to design and optimize devices should be used with caution when the size of the pores becomes comparable to that of ions and water molecules. Here, we address this issue by simulating realistic capacitors based on aqueous electrolytes and nanoporous carbide-derived carbon (CDC electrodes, accounting for both their complex structure and their polarization by the electrolyte under applied voltage. We compute the capacitance for two salt concentrations and validate our simulations by comparison with cyclic voltammetry experiments. We discuss the predictions of Debye-Hückel and Poisson-Boltzmann theories, as well as modified Donnan models, and we show that the latter can be parametrized using the molecular simulation results at high concentration. This then allows us to extrapolate the capacitance and salt adsorption capacity at lower concentrations, which cannot be simulated, finding a reasonable agreement with the experimental capacitance. We analyze the solvation of ions and their confinement within the electrodes—microscopic properties that are much more difficult to obtain experimentally than the electrochemical response but very important to understand the mechanisms at play. We finally discuss the implications of our findings for CapMix and CDI, both from the modeling point of view and from the use of CDCs in these contexts.

Blue Energy and Desalination with Nanoporous Carbon Electrodes: Capacitance from Molecular Simulations to Continuous Models

Science.gov (United States)

Simoncelli, Michele; Ganfoud, Nidhal; Sene, Assane; Haefele, Matthieu; Daffos, Barbara; Taberna, Pierre-Louis; Salanne, Mathieu; Simon, Patrice; Rotenberg, Benjamin

2018-04-01

Capacitive mixing (CapMix) and capacitive deionization (CDI) are currently developed as alternatives to membrane-based processes to harvest blue energy—from salinity gradients between river and sea water—and to desalinate water—using charge-discharge cycles of capacitors. Nanoporous electrodes increase the contact area with the electrolyte and hence, in principle, also the performance of the process. However, models to design and optimize devices should be used with caution when the size of the pores becomes comparable to that of ions and water molecules. Here, we address this issue by simulating realistic capacitors based on aqueous electrolytes and nanoporous carbide-derived carbon (CDC) electrodes, accounting for both their complex structure and their polarization by the electrolyte under applied voltage. We compute the capacitance for two salt concentrations and validate our simulations by comparison with cyclic voltammetry experiments. We discuss the predictions of Debye-Hückel and Poisson-Boltzmann theories, as well as modified Donnan models, and we show that the latter can be parametrized using the molecular simulation results at high concentration. This then allows us to extrapolate the capacitance and salt adsorption capacity at lower concentrations, which cannot be simulated, finding a reasonable agreement with the experimental capacitance. We analyze the solvation of ions and their confinement within the electrodes—microscopic properties that are much more difficult to obtain experimentally than the electrochemical response but very important to understand the mechanisms at play. We finally discuss the implications of our findings for CapMix and CDI, both from the modeling point of view and from the use of CDCs in these contexts.

Capacitive Biosensors and Molecularly Imprinted Electrodes.

Science.gov (United States)

Ertürk, Gizem; Mattiasson, Bo

2017-02-17

Capacitive biosensors belong to the group of affinity biosensors that operate by registering direct binding between the sensor surface and the target molecule. This type of biosensors measures the changes in dielectric properties and/or thickness of the dielectric layer at the electrolyte/electrode interface. Capacitive biosensors have so far been successfully used for detection of proteins, nucleotides, heavy metals, saccharides, small organic molecules and microbial cells. In recent years, the microcontact imprinting method has been used to create very sensitive and selective biorecognition cavities on surfaces of capacitive electrodes. This chapter summarizes the principle and different applications of capacitive biosensors with an emphasis on microcontact imprinting method with its recent capacitive biosensor applications.

A Self-Biased Active Voltage Doubler for Energy Harvesting Systems

KAUST Repository

Tayyab, Umais; Alzaher, Hussain A.

2017-01-01

An active voltage doubler utilizing a single supply op-amp for energy harvesting system is presented. The proposed doubler is used for rectification process to achieve both acceptably high power conversion efficiency (PCE) and large rectified DC

New digital reference current generation for shunt active power filter under distorted voltage conditions

Energy Technology Data Exchange (ETDEWEB)

Abdusalam, Mohamed; Karimi, Shahram; Saadate, Shahrokh [Groupe de Recherche en Electrotechnique et Electronique de Nancy (GREEN), CNRS UMR 7037 (France); Poure, Philippe [Laboratoire d' Instrumentation Electronique de Nancy (LIEN), EA 3440, Universite Henri Poincare - Nancy Universite, B.P. 239, 54506 Vandoeuvre les Nancy Cedex (France)

2009-05-15

In this paper, a new reference current computation method suitable for shunt active power filter control under distorted voltage conditions is proposed. The active power filter control is based on the use of self-tuning filters (STF) for the reference current generation and on a modulated hysteresis current controller. This active filter is intended for harmonic compensation of a diode rectifier feeding a RL load under distorted voltage conditions. The study of the active filter control is divided in two parts. The first one deals with the harmonic isolator which generates the harmonic reference currents and is experimentally implemented in a DS1104 card of a DSPACE prototyping system. The second part focuses on the generation of the switching pattern of the inverter by using a modulated hysteresis current controller, implemented in an analogue card. The use of STF instead of classical extraction filters allows extracting directly the voltage and current fundamental components in the {alpha}-{beta} axis without phase locked loop (PLL). The performances are good even under distorted voltage conditions. First, the effectiveness of the new proposed method is mathematically studied and verified by computer simulation. Then, experimental results are presented using a DSPACE system associated with the analogue current controller for a real shunt active power filter. (author)

Molecular mechanism of voltage sensing in voltage-gated proton channels

Science.gov (United States)

Rebolledo, Santiago; Perez, Marta E.

2013-01-01

Voltage-gated proton (Hv) channels play an essential role in phagocytic cells by generating a hyperpolarizing proton current that electrically compensates for the depolarizing current generated by the NADPH oxidase during the respiratory burst, thereby ensuring a sustained production of reactive oxygen species by the NADPH oxidase in phagocytes to neutralize engulfed bacteria. Despite the importance of the voltage-dependent Hv current, it is at present unclear which residues in Hv channels are responsible for the voltage activation. Here we show that individual neutralizations of three charged residues in the fourth transmembrane domain, S4, all reduce the voltage dependence of activation. In addition, we show that the middle S4 charged residue moves from a position accessible from the cytosolic solution to a position accessible from the extracellular solution, suggesting that this residue moves across most of the membrane electric field during voltage activation of Hv channels. Our results show for the first time that the charge movement of these three S4 charges accounts for almost all of the measured gating charge in Hv channels. PMID:23401575

Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

International Nuclear Information System (INIS)

Wei, Li; Ling, Xu; Wei-Ming, Zhao; Hong-Lin, Ding; Zhong-Yuan, Ma; Jun, Xu; Kun-Ji, Chen

2010-01-01

This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO 2 layer on p-type Si (100). Capacitance–voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance–time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10 4 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Measuring voltage transients with an ultrafast scanning tunneling microscope

DEFF Research Database (Denmark)

Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

1997-01-01

circuit, where the tunneling tip is directly connected to the current amplifier of the scanning tunneling microscope, this dependence is eliminated. Ail results can be explained with coupling through the geometrical capacitance of the tip-electrode junction. By illuminating the current......We use an ultrafast scanning tunneling microscope to resolve propagating voltage transients in space and time. We demonstrate that the previously observed dependence of the transient signal amplitude on the tunneling resistance was only caused by the electrical sampling circuit. With a modified...

Anomalous or regular capacitance? The influence of pore size dispersity on double-layer formation

Science.gov (United States)

Jäckel, N.; Rodner, M.; Schreiber, A.; Jeongwook, J.; Zeiger, M.; Aslan, M.; Weingarth, D.; Presser, V.

2016-09-01

The energy storage mechanism of electric double-layer capacitors is governed by ion electrosorption at the electrode surface. This process requires high surface area electrodes, typically highly porous carbons. In common organic electrolytes, bare ion sizes are below one nanometer but they are larger when we consider their solvation shell. In contrast, ionic liquid electrolytes are free of solvent molecules, but cation-anion coordination requires special consideration. By matching pore size and ion size, two seemingly conflicting views have emerged: either an increase in specific capacitance with smaller pore size or a constant capacitance contribution of all micro- and mesopores. In our work, we revisit this issue by using a comprehensive set of electrochemical data and a pore size incremental analysis to identify the influence of certain ranges in the pore size distribution to the ion electrosorption capacity. We see a difference in solvation of ions in organic electrolytes depending on the applied voltage and a cation-anion interaction of ionic liquids in nanometer sized pores.

Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures

Directory of Open Access Journals (Sweden)

K. AMEUR

2014-05-01

Full Text Available In this work, electrical characterization of the current-voltage and capacitance- voltage curves for the Metal/InN/InP Schottky structures are investigated. We have studied electrically thin InN films realized by the nitridation of InP (100 substrates using a Glow Discharge Source (GDS in ultra high vacuum. The I (V curves have exhibited anomalous two-step (kink forward bias behaviour; a suitable fit was only obtained by using a model of two discrete diodes in parallel. Thus, we have calculated, using I(V and C(V curves of Hg/InN/InP Schottky structures, the ideality factor n, the saturation current Is, the barrier height jB, the series resistance Rs, the doping concentration Nd and the diffusion voltage Vd. We have also presented the band diagram of this heterojunction which indicates the presence of a channel formed by holes at the interface InN/InP which explain by the presence of two-dimensional electron gas (2-DEG and this was noticed in the presentation of characteristics C(V.

Electropolymerized polyazulene as active material in flexible supercapacitors

Science.gov (United States)

Suominen, Milla; Lehtimäki, Suvi; Yewale, Rahul; Damlin, Pia; Tuukkanen, Sampo; Kvarnström, Carita

2017-07-01

We report the capacitive behavior of electrochemically polymerized polyazulene films in different ionic liquids. The ionic liquids in this study represent conventional imidazolium based ionic liquids with tetrafluoroborate and bis(trifluoromethylsulfonyl)imide anions as well as an unconventional choline based ionic liquid. The effect of different ionic liquids on the polymerization and capacitive performance of polyazulene films is demonstrated by cyclic voltammetry and electrochemical impedance spectroscopy in a 3-electrode cell configuration. The films exhibit the highest capacitances in the lowest viscosity ionic liquid (92 mF cm-2), while synthesis in high viscosity ionic liquid shortens the conjugation length and results in lower electroactivity (25 mF cm-2). The obtained films also show good cycling stabilities retaining over 90% of their initial capacitance over 1200 p-doping cycles. We also demonstrate, for the first time, flexible polyazulene supercapacitors of symmetric and asymmetric configurations using the choline based ionic liquid as electrolyte. In asymmetric configuration, capacitance of 55 mF (27 mF cm-2) with an equivalent series resistance of 19 Ω is obtained at operating voltage of 1.5 V. Upon increasing the operating voltage up to 2.4 V, the capacitance increases to 72 mF (36 mF cm-2).

Assessment of sperm viability, mitochondrial activity, capacitation and acrosome intactness in extended boar semen during long-term storage.

Science.gov (United States)

Huo, Li-Jun; Ma, Xing-Hong; Yang, Zeng-Ming

2002-10-15

The purpose of this study was to assess sperm quality in extended boar semen during in vitro storage in order to determine which extender should be used and how long boar semen can be stored. Freshly ejaculated boar semen was diluted with equal volumes of Beltsville thaw solution (BTS), Androhep, KIEV or Zorlesco extenders and stored at 17 degrees C for up to 15 days. Sperm quality was evaluated by examining viability using SYBR-14/PI and Hoechst 33258 staining, mitochondrial activity using 5,5',6,6'-tetrachloro-1,1',3,3'-tetraethylbenzimidazolyl-carbocyanine iodide (JC-1) staining, acrosome intactness by Coomassie blue staining, and capacitation status by chlortetracycline (CTC) staining. There were over 50% viable spermatozoa in boar semen extended with Zorlesco and Androhep extenders on Day 13 of storage. The percentage of JC-1-stained spermatozoa was 53.8 +/- 2.1% for Zorlesco and 57.7 +/- 1.60% for Androhep extenders on Day 13 of storage. The percentage of acrosome-intact spermatozoa detected by Coomassie blue staining was higher than that in the SYBR-14PI-, Hoechst 33258-, and JC-1-stained samples in our study. The results from SYBR-14/PI, Hoechst 33258, JC-1, and Coomassie blue staining were highly correlated (r > or = 0.9461). There were less than 15% capacitated spermatozoa in the semen extended with BTS, Androhep and Zorlesco extenders during 9 days of storage. However, most viable boar spermatozoa became capacitated by Day 13 of storage. The rank order of four extenders for maintaining sperm viability and mitochondrial activity was as follows: Androhep, Zorlesco, BTS, KIEV.

Nanoscale capacitance: A quantum tight-binding model

Science.gov (United States)

Zhai, Feng; Wu, Jian; Li, Yang; Lu, Jun-Qiang

2017-01-01

Landauer-Buttiker formalism with the assumption of semi-infinite electrodes as reservoirs has been the standard approach in modeling steady electron transport through nanoscale devices. However, modeling dynamic electron transport properties, especially nanoscale capacitance, is a challenging problem because of dynamic contributions from electrodes, which is neglectable in modeling macroscopic capacitance and mesoscopic conductance. We implement a self-consistent quantum tight-binding model to calculate capacitance of a nano-gap system consisting of an electrode capacitance C‧ and an effective capacitance Cd of the middle device. From the calculations on a nano-gap made of carbon nanotube with a buckyball therein, we show that when the electrode length increases, the electrode capacitance C‧ moves up while the effective capacitance Cd converges to a value which is much smaller than the electrode capacitance C‧. Our results reveal the importance of electrodes in modeling nanoscale ac circuits, and indicate that the concepts of semi-infinite electrodes and reservoirs well-accepted in the steady electron transport theory may be not applicable in modeling dynamic transport properties.

The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider.

Science.gov (United States)

Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

2017-11-17

The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids.

Branching in current-voltage characteristics of intrinsic Josephson junctions

International Nuclear Information System (INIS)

Shukrinov, Yu M; Mahfouzi, F

2007-01-01

We study branching in the current-voltage characteristics of the intrinsic Josephson junctions of high-temperature superconductors in the framework of the capacitively coupled Josephson junction model with diffusion current. A system of dynamical equations for the gauge-invariant phase differences between superconducting layers for a stack of ten intrinsic junctions has been numerically solved. We have obtained a total branch structure in the current-voltage characteristics. We demonstrate the existence of a 'breakpoint region' on the current-voltage characteristics and explain it as a result of resonance between Josephson and plasma oscillations. The effect of the boundary conditions is investigated. The existence of two outermost branches and correspondingly two breakpoint regions for the periodic boundary conditions is shown. One branch, which is observed only at periodic boundary conditions, corresponds to the propagating of the plasma mode. The second one corresponds to the situation when the charge oscillations on the superconducting layers are absent, excluding the breakpoint. A time dependence of the charge oscillations at breakpoints is presented

Electrochemical capacitive performances of nanoporous carbon derived from sunflower seed shell

Energy Technology Data Exchange (ETDEWEB)

Li, X; Xing, W.; Zhuo, S.; Zhou, J. [Shandong Univ. of Technology, Zibo (China). School of Chemical Engineering

2010-07-01

Electrochemical double-layer capacitances (EDLCs) are used in applications were high power density and long cycle life are required. Nanoporous materials are typically used to prepare EDLC electrodes due to their high surface area, good physicochemical stability, and high conductivity. In this study, nanoporous carbon materials were prepared from sunflower seed shells and used as an electrode material for an EDLC. The surface and structural properties of the carbon materials were analyzed using N{sub 2} adsorption and scanning electron microscopy (SEM) techniques. The study showed that AC-X-Y carbons prepared using the impregnation-activation process had a better capacitive behaviour and higher capacitance retention ratio at fast charge-discharge rates than carbons made using the carbonization-activation process. The improved electrochemical performance of the carbons was attributed to the abundant macroscopic pores and decreased interior micropore surface. The specific capacitances of the carbon was approximately twice that of a hard-templated mesoporous carbon in all current densities ranging from 0.25 to 10 A per g. Results indicated that sunflower seed shells can be used to prepare EDLCs. 2 refs., 1 fig.

Enhancement of capacitance performance of activated carbon—Polyaniline composites by introducing methyl orange

International Nuclear Information System (INIS)

Jia Yujie; Jiang Jianchun; Sun Kang; Dai Tingyang

2012-01-01

Activated carbon–methyl orange–polyaniline (AC–MO–PAn) composites have been synthesized for the first time. The structural properties of the composites have been characterized with nitrogen absorption–desorption, Fourier transform infrared spectroscopy (FTIR), thermogravimetric analysis (TGA) and X-ray photoelectron spectroscopy (XPS). The electrostatic force between MO molecules and aniline (An) salt is assumed to promote the adsorption of aniline on the surface of AC. On the other hand, the sulfonic groups in MO molecules play a role of dopant and provide active sites for the polymerization of aniline. Although the loading amount and structure of PAn in as-prepared AC–MO–PAn composites and conventional AC–PAn composites are almost the same, the electrochemical measurements indicate that the AC–MO–PAn composites have preferable capacitive performance and are favorable to be used as the electrode materials in supercapacitors.

High-power high-voltage pulse generator for supplying electrostatic precipitators of dust

International Nuclear Information System (INIS)

Radu, A.; Martin, D.

1992-01-01

The study and development of an experimental high voltage generator specialized in the supply of electrostatic precipitators are presented. The main parameters of the pulse generator are: U = -30 kV, I = 8.8 A, τ = 120μs, f r = 150 Hz. The pulse generator was tested on a laboratory electrostatic precipitator with nominal capacitance C = 25 nF, biased at -40 kV by means of a separate high voltage rectifier. The experimental results will be used for the creation of a more powerful pulse generator, a prototype for the supply of a real industrial electrostatic precipitator: U = -50 kV, I = 313 A, τ = 100μs, f r = 300 Hz, C = 100 nF. (Author)

A New Resonant Capacitor Diode Voltage Multiplier Topology for Pulsed Power Application

Directory of Open Access Journals (Sweden)

Mohammad Kebriaei

2017-09-01

Full Text Available Today, the pulsed power systems have been employed in many applications. To meet the requirement of user, the pulse generator should enjoy the advantages of compactness, high flexibility, high pulse repetition rate and cost efficiency. Among all of converters that can be used to generate high voltage pulses, capacitance diode voltage multiplier (CDVM is a good candidate to meet the mentioned requirements. In this paper a new converter that is combination of full-bridge inverter, CDVM and resonant circuit is proposed. The performance of developed converter is compared with the conventional circuits and is demonstrated via simulation in MATLAB/SIMULINK. Experimental tests on a prototype setup have verified the capability of this topology.

Fully on-chip switched capacitor NMOS low dropout voltage regulator

CERN Document Server

Camacho, D; Camacho, Daniel; Moreira, Paulo

2010-01-01

This paper presents a 1.5 V 50 mA low dropout voltage (LDO) regulator using an NMOS transistor as the output pass element. Continuous time,operation of the LDO is achieved using a new switched floating capacitor scheme that raises the gate voltage of the pass element. The regulator has a 0.2 V dropout at a 50 mA load and is stable for a wide load current range with loading capacitances up to 50 pF. The output variation when a full load step is applied is 300 mV and the recovery time is below 0.3 mu s. it is designed in a 0.13 mu m CMOS process with an area of 0.008 mm(2) and its operation does not require any external component.

A Novel Method for Proximity Detection of Moving Targets Using a Large-Scale Planar Capacitive Sensor System

Directory of Open Access Journals (Sweden)

Yong Ye

2016-05-01

Full Text Available A novel method for proximity detection of moving targets (with high dielectric constants using a large-scale (the size of each sensor is 31 cm × 19 cm planar capacitive sensor system (PCSS is proposed. The capacitive variation with distance is derived, and a pair of electrodes in a planar capacitive sensor unit (PCSU with a spiral shape is found to have better performance on sensitivity distribution homogeneity and dynamic range than three other shapes (comb shape, rectangular shape, and circular shape. A driving excitation circuit with a Clapp oscillator is proposed, and a capacitance measuring circuit with sensitivity of 0.21 V p − p / pF is designed. The results of static experiments and dynamic experiments demonstrate that the voltage curves of static experiments are similar to those of dynamic experiments; therefore, the static data can be used to simulate the dynamic curves. The dynamic range of proximity detection for three projectiles is up to 60 cm, and the results of the following static experiments show that the PCSU with four neighboring units has the highest sensitivity (the sensitivities of other units are at least 4% lower; when the attack angle decreases, the intensity of sensor signal increases. This proposed method leads to the design of a feasible moving target detector with simple structure and low cost, which can be applied in the interception system.

Enhanced specific capacitance of modified needle cokes by controlling oxidation treatment

International Nuclear Information System (INIS)

Yang, Sunhye; Kim, Ick-Jun; Choi, In-Sik; Soo Kim, Hyun; Tack Kim, Yu

2010-01-01

The electric double-layer performance of needle cokes can be affected by the morphology of structures. Hence, we introduce modified needle cokes by using simple oxidation treatment. The degree of graphitization with high specific capacitance is controlled by acid and heat treatment. The active sites of cokes are increased with increasing oxidation time. Dilute nitric acid (HNO 3 ) and sodium chlorate (NaClO 3 ) are used for the activation of cokes. In this case, the interlayer distance is dramatically increased from 3.5 to 8.9 A. The specific capacitances are 33 F g -1 and 30 F ml -1 , respectively, on a two-electrode system with a potential range of 0-2.5 V. The behaviors of double-layer capacitance are demonstrated by the charge-discharge process and the morphologies of modified needle cokes are analyzed by XRD, FE-SEM, BET and elemental analysis.

A novel on-chip high to low voltage power conversion circuit

International Nuclear Information System (INIS)

Wang Hui; Wang Songlin; Mou Zaixin; Guo Baolong; Lai Xinquan; Ye Qiang; Li Xianrui

2009-01-01

A novel power supply transform technique for high voltage IC based on the TSMC 0.6 μm BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm 2 area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/deg. C. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

A novel on-chip high to low voltage power conversion circuit

Energy Technology Data Exchange (ETDEWEB)

Wang Hui; Wang Songlin; Mou Zaixin; Guo Baolong [Institute of Mechano-electronic Engineering, Xidian University, Xi' an 71007 (China); Lai Xinquan; Ye Qiang; Li Xianrui, E-mail: whui94@126.co [Institute of Electronic CAD, Xidian University, Xi' an 710071 (China)

2009-03-15

A novel power supply transform technique for high voltage IC based on the TSMC 0.6 mum BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm{sup 2} area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/deg. C. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

Reliability of high-voltage pulse capacitors operating in large energy storages

International Nuclear Information System (INIS)

Kuchinskij, G.S.; Fedorova, V.S.; Shilin, O.V.

1982-01-01

To improve the reliability of pulse capacitors operating in capacitive energy storages, processes, resulting in break-down of capacitor insulation were investigated. A statistic model of failures was constructed and reliability of real capacitors, functioning at operating electric intensity Usub(oper) equal 70 kV/mm and at elevated intensity 90 kV/mm was calculated. Results of testing the IK50-ZU4 capacitor are given. The form of the capacitor service life distribution function was specified. To provide and confirm the assigned capacitor reliability, it is necessary to speed up tests at a higher voltage (1.3-1.5) Usub(oper). To improve the capacitor reliability, it is advisable to conduct acceptance tests, which include hold at increased constant voltage (1.3-1.5) Usub(oper) during 1-3 min and the effect of pulses of increased voltage (1.2-1.3) Usub(oper) with the pulse shape corresponding to operating conditions

Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation.

Science.gov (United States)

Kim, Yu Jin; Park, Hyeon Woo; Hyun, Seung Dam; Kim, Han Joon; Kim, Keum Do; Lee, Young Hwan; Moon, Taehwan; Lee, Yong Bin; Park, Min Hyuk; Hwang, Cheol Seong

2017-12-13

Ferroelectric (FE) capacitor is a critical electric component in microelectronic devices. Among many of its intriguing properties, the recent finding of voltage drop (V-drop) across the FE capacitor while the positive charges flow in is especially eye-catching. This finding was claimed to be direct evidence that the FE capacitor is in negative capacitance (NC) state, which must be useful for (infinitely) high capacitance and ultralow voltage operation of field-effect transistors. Nonetheless, the NC state corresponds to the maximum energy state of the FE material, so it has been widely accepted in the community that the material alleviates that state by forming ferroelectric domains. This work reports a similar V-drop effect from the 150 nm thick epitaxial BaTiO 3 ferroelectric thin film, but the interpretation was completely disparate; the V-drop can be precisely simulated by the reverse domain nucleation and propagation of which charge effect cannot be fully compensated for by the supplied charge from the external charge source. The disappearance of the V-drop effect was also observed by repeated FE switching only up to 10 cycles, which can hardly be explained by the involvement of the NC effect. The retained reverse domain nuclei even after the subsequent poling can explain such behavior.

Narrow gap electronegative capacitive discharges

Energy Technology Data Exchange (ETDEWEB)

Kawamura, E.; Lieberman, M. A.; Lichtenberg, A. J. [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)

2013-10-15

Narrow gap electronegative (EN) capacitive discharges are widely used in industry and have unique features not found in conventional discharges. In this paper, plasma parameters are determined over a range of decreasing gap length L from values for which an electropositive (EP) edge exists (2-region case) to smaller L-values for which the EN region connects directly to the sheath (1-region case). Parametric studies are performed at applied voltage V{sub rf}=500 V for pressures of 10, 25, 50, and 100 mTorr, and additionally at 50 mTorr for 1000 and 2000 V. Numerical results are given for a parallel plate oxygen discharge using a planar 1D3v (1 spatial dimension, 3 velocity components) particle-in-cell (PIC) code. New interesting phenomena are found for the case in which an EP edge does not exist. This 1-region case has not previously been investigated in detail, either numerically or analytically. In particular, attachment in the sheaths is important, and the central electron density n{sub e0} is depressed below the density n{sub esh} at the sheath edge. The sheath oscillations also extend into the EN core, creating an edge region lying within the sheath and not characterized by the standard diffusion in an EN plasma. An analytical model is developed using minimal inputs from the PIC results, and compared to the PIC results for a base case at V{sub rf}=500 V and 50 mTorr, showing good agreement. Selected comparisons are made at the other voltages and pressures. A self-consistent model is also developed and compared to the PIC results, giving reasonable agreement.

Background voltage distortion influence on power electric systems in the presence of the Steinmetz circuit

Energy Technology Data Exchange (ETDEWEB)

Sainz, Luis; Pedra, Joaquin [Department of Electrical Engineering, ETSEIB-UPC, Av. Diagonal 647, 08028 Barcelona (Spain); Caro, Manuel [IDOM Ingenieria y Arquitectura, C. Barcas 2, 46002 Valencia (Spain)

2009-01-15

In traction systems, it is usual to connect reactances in delta configuration with single-phase loads to reduce voltage unbalances and avoid electric system operation problems. This set is known as Steinmetz circuit. Parallel and series resonances can occur due to the capacitive reactance of the Steinmetz circuit and affect power quality. In this paper, the series resonance ''observed'' from the supply system is numerically located. The study of this resonance is important to avoid problems due to background voltage distortion. Experimental measurements are also presented to validate the obtained numerical results. (author)

Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid.

Science.gov (United States)

Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

2016-07-05

The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane.

Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid

Science.gov (United States)

Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

2016-01-01

The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane. PMID:27330112

Analysis on voltage oscillation of a mid-frequency series resonant inverter for DRMP coils on J-TEXT

Energy Technology Data Exchange (ETDEWEB)

Liu, Long-jian, E-mail: liulongjian001@yeah.net [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Yu, Ke-xun; Zhang, Ming; Nan, Jie-yin; Jiang, Guo-zhong; Rao, Bo; Li, Xuan [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2016-01-15

Highlights: • The reason of high-voltage oscillation of a series resonant inverter for DRMP coils is analyzed. • The condition or method for reduction of high-voltage oscillation is discussed. • The considerations of dead time and switch frequency for reduction of high-voltage oscillation are discussed. - Abstract: This paper deals with the voltage oscillation of an AC power supply for generating dynamic magnetic perturbation (DRMP) on J-TEXT. The power supply is a series resonant inverter with a matching transformer. It was noted that the high-voltage oscillation at transformer primary side is caused by an interaction between the line inductance and the stray capacitance of the matching transformer at switching transitions. In order to reduce the high-voltage oscillation and consider the requirement for soft-switching technique simultaneously, the switching frequency should be chosen properly by fine-tuning. The dead time should be chosen according to the relative size of minimum required dead time for protection and the optimal dead time.

Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy

International Nuclear Information System (INIS)

Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

2013-01-01

Highlights: ► The cause of high background doping was confirmed and characterized. ► The current–voltage characteristics deviate from the thermionic emission. ► The recombination current is attributed to a hole trap (E V + 0.52 eV). ► The hole trap (E V + 0.52 eV) was confirmed by DLTS measurements. -- Abstract: The temperature dependence of capacitance–voltage (C–V) and current voltage (I–V) characteristics were used to study the cause of high background doping and the underlying current transport mechanisms in GaAsN Schottky diode grown by chemical beam epitaxy (CBE). In one hand, a nitrogen-related sigmoid increase of junction capacitance and ionized acceptor concentration was observed in the temperature range 70–100 K and was attributed to the thermal ionization of a nitrogen–hydrogen-related deep acceptor-state, with thermal activation energy of approximately 0.11 eV above the valence band maximum (VBM) of GaAsN. This acceptor state is mainly responsible for the high background doping in unintentionally doped GaAsN grown by CBE. On the other hand, the I–V characteristics at different temperatures were found to deviate from the well known pure thermionic-emission mechanism. Based on their fitting at each temperature, the recombination current in the space charge region of GaAsN Schottky diode was mainly attributed to a hole trap, localized at 0.51 eV above the VBM. Given the accuracy of measurements, this result was confirmed by deep level transient spectroscopy measurements. Nevertheless, considering the Shockley–Read–Hall model of generation-recombination, the recombination activity of this defect was quantified and qualified to be weak compared with the markedly degradation of minority carrier lifetime in GaAsN material

Carbon flow electrodes for continuous operation of capacitive deionization and capacitive mixing energy generation

NARCIS (Netherlands)