WorldWideScience

Sample records for acopladas entre si

  1. ACOPLAMIENTO EXCITATORIO E INHIBITORIO DE NEURONAS PULSANTES ACOPLADAS

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    Francis Armando Segovia Chaves

    2012-05-01

    Full Text Available La información es representada como patrones de actividad neuronal o pulsos, lo que crea una diferencia significante entre las redes neuronales pulsantes y las redes neuronales clásicas. Una característica diferente de las redes neuronales pulsantes es que la información es codificada en patrones de actividad neuronal y estas se comunican usando trenes de pulsos en lugar de valores individuales. Además, este tipo de redes neuronales pulsantes trabajan con una gran cantidad de neuronas donde se requiere grandes recursos computacionales para ser simuladas. En el presente trabajo se realiza un análisis teórico de las redes neuronales pulsantes,  para el caso de dos neuronas acopladas. Se logra obtener teóricamente las condiciones para acoplamiento excitatorio e inhibitorio en las neuronas.

  2. RADICALMENTE SANTOS: o rock’n’roll e o underground na produção da pertença religiosa entre jovens

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    Flávia Slompo Pinto

    2016-11-01

    Full Text Available Esse artigo apresenta um estudo realizado entre os jovens da igreja evangélica Crash Church Underground Ministry, fundada em 2006 e localizada em um pequeno galpão do bairro Ipiranga, na cidade de São Paulo. A partir do trabalho de campo, foi possível perceber que a cosmologia pentecostal, acoplada à cena underground do heavy metal, fornece aos jovens meios de pensar as práticas de construção de seus projetos de vida como voltadas para algo de grande valor. Vendo a si próprios como socialmente marginalizados, esses jovens invertem tal condição a partir do underground e da religião, construindo com tais recursos agencialidade e poder, de forma a forjar um estilo próprio de existência.

  3. Aplicación del bioensayo EROD-H4IIE para la determinación de dioxinas en carnes de pollos broiler: un estudio de equivalencia con la cromatografía de gases de alta resolución acoplada a espectrometría de masas de alta resolución

    OpenAIRE

    Schoffer, JT; Bustos-López, C; Sotomayor, P; Mattar, CA; González, A; Robles, C; Samsing, F; Acevedo, O; Valdovinos, CE

    2011-01-01

    En el presente estudio se aplicó el bioensayo EROD con línea celular H4IIE para determinar la equivalencia de resultados para carnes de pollo, entre el bioensayo EROD-H4IIE en pg TCDD-EQ/g de tejido y los resultados de la cromatografía de gases de alta resolución acoplada a espectrometría de alta resolución (HRGC/HRMS) en pg WHO-TEQ/g de grasa. Para lo anterior se utilizaron 41 muestras compuestas de trutros de pollo. Éstas fueron obtenidas en la planta faenadora de 4 planteles diferentes de ...

  4. OPTIMIZACIÓN DEL MÉTODO DE MICROEXTRACCIÓN EN FASE SÓLIDA ACOPLADA A CROMATOGRAFÍA GASEOSA PARA ANÁLISIS DE METANOL EN AGUA

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    Fidel Granda

    2011-12-01

    Full Text Available Se optimizó la técnica de microextracciónen fase sólida acoplada a cromatografíagaseosa con detector de ionizaciónde flama (HS-SPME/GC-FID por sunombre en inglés para análisis de metanolen agua utilizando diferentes microfibras,una fibra de poliacrilato y una fibrade polidimetilsiloxano y una columnaRTX-5. Las variables evaluadas fuerontiempo de absorción del contaminante enla fibra, volumen libre en el vial, tiempoy temperatura de desorción y efecto dela agitación y presencia de sal en el sistema.De acuerdo con los resultados, eltiempo óptimo de absorción es 15 minutos,el volumen de muestra es 5 mL. Seencontró que existe una íntima relaciónentre la temperatura de desorción y el área del pico cromatográfico, y una correlaciónR2 = 0,99965 para la curva decalibración elaborada en un rango entre0 y 50%, considerando el origen, con unlímite de detección de 0,01% y un límitede cuantificación del 0,04%.

  5. REPENSANDO LAS RELACIONES ENTRE LA EDUCACIÓN Y EL TRABAJO: Una reflexión basada en investigaciones realizadas en México

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    María de Ibarrola

    Full Text Available Con base en investigaciones realizadas en México por la autora desde la década de los ochenta, se han ido construyendo cuatro dimensiones de análisis necesarias para repensar la naturaleza y el alcance de las relaciones entre la educación y el trabajo, más allá de las teorías clásicas. Se trata de la estructura heterogénea y desigual de los espacios de trabajo en el país; la prioridad que las políticas públicas conceden a la formación escolar para el trabajo y los actores que participan en ello; las condiciones reales de la formación para el trabajo en las escuelas; y las transiciones y trayectorias que viven los individuos entre la escuela y el trabajo. Con base en esos análisis se plantea la noción de relaciones complejas, multidimensionales, cambiantes, contradictorias, interactivas e históricas, flojamente acopladas, entre las que suceden todo tipo de imperfecciones y desajustes.

  6. Arquitectura de acoplamiento entre INS/GPS para navegación precisa en trayectorias establecidas

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    Monica Zabala

    2018-05-01

    Full Text Available Se implementa un prototipo basado en tarjetas de desarrollo para el acoplamiento del sistema de navegación inercial con GPS para mejorar la precisión en la navegación sobre una trayectoria. Inicialmente es necesario la calibración de la unidad de medición inercial (IMU mediante un filtro de MADGWICK para que los datos brutos extraídos sean fiables, el acoplamiento de las señales del sistema de posicionamiento global (GPS e IMU se realiza a través de la arquitectura Tight Coupling por medio del Filtro de Kalman con el fin de eliminar errores correlacionados entre sistemas y alcanzar mejor precisión en la solución de navegación generalmente utilizada para aplicaciones en vehículos aéreos no tripulados (UAV. Se desarrolla la aplicación final denominada LJLAB en Matlab, cuya función es procesar y visualizar los datos medidos de ambos sistemas en forma independiente y acopladas al mostrar gráficamente el error en la precisión de posicionamiento que existe entre tecnologías, lo cual es comprobado estadísticamente a través del método experimental ANOVA que calcula el error absoluto entre los puntos reales y los medidos a través del análisis de la media y varianza de los datos observados.

  7. Aplicación del bioensayo EROD-H4IIE para la determinación de dioxinas en carnes de pollos broiler: un estudio de equivalencia con la cromatografía de gases de alta resolución acoplada a espectrometría de masas de alta resolución Application of the EROD-H4IIE bioassay for the determination of dioxins in broiler chicken meat: an equivalence study with high resolution gas chromatography coupled to high resolution mass spectrometry

    OpenAIRE

    JT Schoffer; C Bustos-López; P Sotomayor; CA Mattar; A González; C Robles; F Samsing; O Acevedo; CE Valdovinos

    2011-01-01

    En el presente estudio se aplicó el bioensayo EROD con línea celular H4IIE para determinar la equivalencia de resultados para carnes de pollo, entre el bioensayo EROD-H4IIE en pg TCDD-EQ/g de tejido y los resultados de la cromatografía de gases de alta resolución acoplada a espectrometría de alta resolución (HRGC/HRMS) en pg WHO-TEQ/g de grasa. Para lo anterior se utilizaron 41 muestras compuestas de trutros de pollo. Éstas fueron obtenidas en la planta faenadora de 4 planteles diferentes de ...

  8. Interacciones entre plantas y microorganismos del suelo: Consecuencias para la dinámica de comunidades vegetales

    OpenAIRE

    Lozano Bernal, Yudi M.

    2014-01-01

    En esta tesis doctoral pretendemos aclarar aspectos fundamentales relacionados con la interacción entre plantas y microorganismos del suelo y sus consecuencias para la dinámica de las comunidades vegetales. Pretendemos comprobar si las comunidades microbianas están determinando interacciones negativas y/o positivas entre plantas; si tras el abandono de tierras dedicadas al cultivo, las plantas y los microorganismos del suelo siguen patrones sucesionales, y si los microorganismo...

  9. O conhecimento de si como possibilidade para a transformação de si e do coletivo

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    Rosemary Silva da Silveira

    1999-12-01

    Full Text Available Para promover a discussão e reflexão em grupo sobre o significado do trabalho da enfermagem numa unidade cirúrgica e diante da constatação da necessidade dos trabalhadores de enfermagem conhecerem-se mais a si e entre si, como participantes e construtores de um trabalho coletivo, implementou-se uma prática, entendida como uma tecnologia do eu, que favorecesse o conhecimento de si e do outro na tentativa de transformar a si e, conseqüentemente, o coletivo. A partir da exposição verbal e individual, ao grupo, da percepção de si, propôs-se o registro escrito de qualidades e conselhos que poderiam ser atribuídos a cada membro da equipe de enfermagem. Sistematizadas as contribuições, cada participante recebeu, individualmente, o conjunto de percepções do grupo sobre si. Tais estratégias constituíram-se em espaços mobilizadores para o diálogo, a reflexão crítica e uma maior aproximação entre os trabalhadores, representando uma possibilidade de cuidado de si e de aperfeiçoamento pessoal e grupal.

  10. Produção de sentidos entre adolescentes sobre o cuidado de si na gravidez

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    Nayara Bueno de Araujo

    2016-06-01

    Full Text Available No pré-natal, profissionais comumente desconsideram a rede de produção de sentidos de adolescentes sobre o cuidado de si na gravidez. Busca-se evidenciá-la em uma situação concreta, com foco nas fontes e comunidades de referência para adolescentes de áreas pobres de Cuiabá-MT, Brasil, sintetizadas em um mapa. Trata-se de estudo qualitativo, realizado entre 2014-2015, com 12 adolescentes grávidas, por meio de: grupo focal, entrevista individual, consulta a prontuários e análise baseada em preceitos e categorias da Análise de Discurso Crítica. A principal comunidade discursiva de referência das adolescentes é a família, embora profissionais de saúde, mídia e conhecidos também intermedeiem a construção de seus discursos. A cultura biomédica e o cuidado, como controle de riscos via comportamentos, são, respectivamente, as fontes e as vozes mais relevantes dentre outras concorrentes. Entender essas peculiaridades propicia ao profissional buscar melhores formas de relacionar-se com adolescentes e ampliar sua autonomia.

  11. La telecol.laboració en la classe de llengua extranjera entre grups heterogenis d’estudiants

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    Mercedes López Santiago

    2014-06-01

    Full Text Available En l'ensenyament de llengües estrangeres, nombrosos professors treballen les competències lingüístiques i comunicatives mitjançant d'activitats que inclouen les TIC. Entre algunes, es troben els projectes de telecol·laboració per Internet, intercanvis asincrònics i sincrònics entre grups d'estudiants que pertanyen a diferents comunitats lingüístiques allunyades geogràficament. El nostre objectiu ha consistit a comprovar si un projecte de telecol·laboració sincrònic entre grups heterogenis d'estudiants, és factible i si contribueix al desenvolupament de les competències comunicatives, interculturals i tecnològiques.

  12. Las relaciones de comercio e inversión entre Colombia y Venezuela

    OpenAIRE

    Eglé Iturbe de Blanco

    1997-01-01

    Venezuela y Colombia cuentan con una larga trayectoria histórica en sus relaciones económicas. Comercian entre ellas y sus nacionales a lo largo de la frontera desde su nacimiento como naciones e interactúan entre ambos países como si fuera uno solo. Al norte, en la península de la Guajira, viven poblaciones indígenas comunes cuyo sustento es el comercio entre ambos lados de la frontera; y al sur, en los estados andinos venezolanos limítrofes con los llanos colombianos, tradicionalmente se ha...

  13. Determinação de compostos nitrogenados aromáticos em alcatrão de carvão através da cromatografia gasosa bidimensional abrangente acoplada à espectrometria de massas

    OpenAIRE

    Juliana Macedo da Silva

    2014-01-01

    A cromatografia gasosa bidimensional abrangente (GC×GC) é uma excelente técnica analítica para a determinação de diversos compostos em matrizes complexas, como é o caso do alcatrão de carvão, objeto deste estudo. O alcatrão foi obtido através do processo de pirólise e submetido à análise por GC×GC visando a especiação de compostos nitrogenados aromáticos. A GC×GC acoplada à espectrometria de massas com analisadores do tipo quadrupolar (qMS) e por tempo de voo (TOFMS) foram utilizados para a d...

  14. Cooperación; altruismo en las relaciones entre aerolíneas

    OpenAIRE

    Fernández Lerate, Elisa M.

    2016-01-01

    El presente estudio se centra en analizar unas determinadas relaciones cooperativas entre compañías aéreas, con la intención de investigar si sacan provecho o no de dichas relaciones. La cooperación entre esas compañías aéreas puede presentar comportamientos más altruistas o más oportunistas. Para centrar el tema del estudio, se van a analizar los acuerdos de códigos compartidos que llevan a cabo entre ellas. Los datos de cooperación a través de código compartido permitirán conocer qué porcen...

  15. Las relaciones entre España y Japón

    OpenAIRE

    Jensana, Amadeo

    2013-01-01

    Si bien España y Japón son dos países separados por más de 10.000 kilómetros existe una importante afinidad cultural entre ambos pueblos. Los japoneses admiran muchas de las manifestaciones culturales españolas, entre las que destacan la arquitectura (especialmente el Modernismo catalán), el flamenco, la gastronomía o el deporte (hay numerosos seguidores de la Liga Profesional de Fútbol). Por su parte, los españoles son plenamente conscientes del nivel tecnológico de las grandes corporacio...

  16. Motivações do conceito de corpo-si: corpo-si, atividade, experiência = Motivations of the concept of selfbody: selfbody, activity, experience

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    Schwartz, Yves

    2014-01-01

    Full Text Available Este texto busca explicar a função de convergências e questões possibilitadoras do desenvolvimento da tese segundo a qual toda atividade de trabalho é sempre “uso de si, por si e por outros” (SCHWARTZ, 1987. Sucessivas reformulações levaram ao estabelecimento do seguinte princípio: toda atividade industriosa é sempre uma “dramática do uso de um corpo-si” (remetendo “dramática” à necessidade contínua de travar debates com normas. Sendo a atividade humana identificada assim como um contínuo debate de normas cujo lócus é o corpo-si, convém perguntar como, em termos de diferentes medidas temporais, esses debates se encaixam (à maneira das bonecas russas, ou seja, de que maneira as relações valorativas nos meios de vida e de trabalho se incorporam ao âmago do corpo-si, inclusive em termos de temporalidades mais curtas, “escondidas no corpo”. Cabe assim entender qual é a unidade enigmática dessa entidade – o corpo-si – que acumula experiência e saberes de formas extremamente diversas, notadamente em sua relação com a linguagem, que articula patrimônio epistêmico e sensibilidade axiológica, sem deixar de estar disponível para ou restrita por micro-escolhas e reajustamentos que a vida não cessa de lhe propor ou impor. O texto, retomando parcialmente, segundo seus objetivos, a distinção entre idem e ipse (RICOEUR, pretende conceber debates de normas encaixados como o cerne da dialética entre essas dimensões

  17. Reactividad entre whiskers de α-SiC y aluminio durante el procesado por vía líquida de materiales compuestos de matriz metálica

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    Ureña, A.

    1999-06-01

    Full Text Available The reactivity between α-SiC whiskers and an aluminium alloy (Al-Cu-Mg, both present in a metal matrix composite, has been studied when such matrix is in molten state. Using mainly transmission electron microscopy (TEM and electron microdiffraction (ED, the nature and morphology of the reaction products generated at the α-SiC/aluminium interface, when this last melts under different condition which simulate casting and welding procedures for metal matrix composites, have been characterised. Both the formation of Al4C3 aggregates with platelet morphology generated by dissolution-reaction mechanisms, and aciculate crystals of the same carbide form by complete dissolution of the α-SiC whiskers and later Al4C3 precipitation into the molten aluminium. Ternary Al-Si carbides with high chemical stability have been also identified by TEMED (β-Al4SiC4, being its formation related with higher energetic conditions than for the Al4C3.

    Se realiza un estudio de la reactividad entre whiskers de α-SiC y una aleación de aluminio en estado líquido (Al-Cu-Mg, que forman parte de un material compuesto de matriz metálica. Empleando fundamentalmente técnicas de microscopía electrónica de barrido (MEB y de transmisión (MET, junto con difracción de electrones (DE, se ha caracterizado la naturaleza y morfología de los productos de reacción que se generan en la intercara α-SiC/aluminio, cuando éste funde en diferentes condiciones que simulan procesos de fabricación y soldadura del material compuesto. Se ha observado tanto la formación de agregados de Al4C3 con morfología tabular producidos por mecanismos de disolución-reacción de los whiskers, como de cristales aciculares del mismo tipo de carburo formados por disolución total de α-SiC y precipitación en el aluminio fundido. Se ha determinado también que, en condiciones suficientemente energéticas, pueden llegar a formarse carburos ternarios de aluminio y silicio (β-Al4SiC4 que

  18. Estrutura social e criação de empresas

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    Gláucia Maria Vasconcelos Vale

    2015-12-01

    Full Text Available RESUMO Para a Sociologia Econômica, as estruturas sociais, no formato de redes interpessoais, influenciam as iniciativas individuais e os resultados econômicos daí derivados. Segundo Granovetter, existem três tipos básicos de estruturas: fortemente acopladas; fortemente desacopladas; fracamente acopladas. Este trabalho situa-se no contexto dessas reflexões, e procura-se, por meio de uma pesquisa amostral realizada com 100 empreendedores, localizados no município de Belo Horizonte, Minas Gerais, Brasil: identificar as estruturas sociais de origem desses indivíduos, em consonância com a tipologia genérica de Granovetter; avaliar a presença de associações entre essas estruturas e a trajetória dos empreendimentos, em particular, a motivação para empreender e o acesso ao mercado. Termina-se por elaborar uma tipologia de estruturas/redes sociais específicas para a análise do empreendedor, composta por três categorias: familiar, profissional e difusa.

  19. La retractación arbitraria, entre principios y remedios

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    Matteo Dellacasa

    2012-06-01

    Full Text Available En la jurisprudencia italiana se ha consolidado el enfoque según la cual el juez está legitimado para controlar el ejercicio del derecho de retractación discrecional. Ante una solicitud expresa de la parte, el juez, incluso, está obligado a verificar la conformidad de la conducta de quien ejerce el derecho con el canon de la buena fe contractual. La reflexión de la doctrina italiana se concentra prevalentemente en la dialéctica entre autonomía privada y control judicial, mientras es menos frecuentado el terreno de los remedios que siguen a la retractación arbitraria. En este segundo perfil se concentra el presente escrito. En primer lugar, se afirma que el control jurisdiccional de la retractación ad nutum es oportuno en relación con todos los contratos, y no solo en aquellos caracterizados por la asimetría de poderes entre las partes. El remedio generalmente aplicable a favor de la parte que sufre la retractación arbitraria se identifica con el resarcimiento del interés negativo: el contratante desilusionado puede obtener el reembolso de los gastos asumidos y el resarcimiento de las oportunidades de ganancias perdidas como consecuencia de la confianza depositada en la realización del negocio. En segundo lugar, se delinean los criterios que permiten identificar la retractación arbitraria. En fin, se analiza si la existencia de una relación de dependencia económica entre la empresa que se retracta arbitrariamente y su contraparte contractual puede justificar la aplicación de un remedio diferente del resarcimiento del interés negativo. El autor está orientado a responder afirmativamente. Si la empresa que sufre la retractación ilegítima ha realizado inversiones específicas –centradas en las exigencias de la contraparte y, por esto, difícilmente recuperables–, el resarcimiento del interés negativo ofrece una tutela parcial e inadecuada. Los remedios aplicables, en cambio, deben salvaguardar el interés positivo de la

  20. Relación entre habilidades de lectura de palabras y comprensión lectora

    OpenAIRE

    Vieiro, Pilar; Amboage, Isabel

    2016-01-01

    La lectura es un aprendizaje instrumental que debe ser enseñado con un método específico. En este sentido es importante conocer la interrelación entre los distintos subprocesos implicados. En este contexto el objetivo general de este estudio es analizar si existe una asociación o disociación entre las habilidades de lectura de palabras y los procesos de comprensión en alumnos de 2º ciclo de Educación Primaria y a partir de aquí analizar las implicaciones educativas de los resultad...

  1. Relación entre inteligencia emocional y notas de las áreas instrumentales en un grupo de tercero de primaria

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    Vicent Alfaro Mateu

    2016-01-01

    Full Text Available La finalidad de este trabajo es conocer si existe relación entre las áreas instrumentales, lengua y matemáticas, y la Inteligencia emocional de un grupo de alumnos de tercero de primaria de un centro concreto. Participaron 26 alumnos a los cuales se aplicó el instrumento test EQ-­‐i YV de BarOn adaptado para los alumnos. Las técnicas de análisis de correlación a través del SPSS permitirán comprobar si existe o no correlación entre la Inteligencia Emocional de los alumnos, los distintos aspectos de la misma y las áreas instrumentales. En los resultados encontrados no existe correlación entre matemáticas y lengua castellana y el total del cuestionario. La correlación entre las áreas instrumentales, lengua castellana y matemáticas es altamente significativa. Del mismo modo, el total de resultados del cuestionario “E” correlaciona positivamente con las partes del cuestionario “A”, “B”, “C” y “D”, remarcando que hay una alta correlación entre el factor intrapersonal (“B” y el factor de adaptabilidad (“D”. En conclusión, no existe una correlación directa entre las notas de los estudiantes y los resultados del test de inteligencia emocional.

  2. Nexos estratégicos entre la retórica y la publicidad

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    Luis Gallardo Vera

    2011-06-01

    Full Text Available El presente artículo contribuye a establecer nexos estratégicos entre la retórica y la publicidad. La adopción del prisma estratégico en los estudios retóricos de la publicidad no es común, sin embargo, la relación entre retórica y publicidad a un nivel estratégico es evidente, teniendo presente los estudios que han investigado la simbiosis entre las dos actividades.Del universo compuesto por las investigaciones sobre retórica y publicidad se seleccionó una muestra de las obras susceptibles de responder a la pregunta de cuáles son los nexos estratégicos entre la retórica y la publicidad. Con este criterio se conformó una muestra teóricamente conducida del universo. La hipótesis de partida ha sido que, si existen documentos que indaguen en la relación entre la retórica y la publicidad, es posible construir un documento que muestre de un modo amplio cuáles son los nexos estratégicos entre ambas actividades. Finalmente, se contrastó que, efectivamente, este documento es único al mostrar ampliamente cuáles son los nexos estratégicos existentes entre la retórica y la publicidad.

  3. RELACIÓN ENTRE LOS NIVELES DE AUTOESTIMA Y ESTRÉS EN ESTUDIANTES UNIVERSITARIOS

    OpenAIRE

    Leticia Ancer Elizondo; Cecilia Meza Peña; Edith G. Pompa Guajardo; Francisco Torres Guerrero; René Landero Hernández

    2011-01-01

    El presente estudio exploró la relación entre el estrés y la autoestima en 219 jóvenes de una universidad privada del área metropolitana de Monterrey (México), además de determinar si hay diferencias por género y por estatus laboral. Se utilizó la Escala de Estrés Percibido de Cohen y la Escala de Autoestima de Rosenberg, ambas en formato electrónico. Los resultados obtenidos indican la presencia de una correlación negativa entre estrés y autoestima, incrementándose en los jóvenes que solamen...

  4. El “consentimiento” negociado entre dos comunidades mineras mexicanas y las trasnacionales Goldcorp y Ternium

    OpenAIRE

    Blanca Ruth Santos Cordero; Eleocadio Martínez Silva

    2015-01-01

    En este artículo se busca reconstruir la dinámica de la relación entre empresas trasnacionales y comunidades rurales mexicanas, a partir de dos estudios de caso: la minera canadiense Goldcorp, en Mazapil, Zacatecas, y la italo-argentina Ternium, en San Miguel Arcángel, en Aquila, Michoacán. La hipótesis sostiene que la racionalidad de la máxima ganancia y el cálculo del riesgo están presentes en las negociaciones entabladas entre las comunidades campesinas y las corporaciones. Y, si bien e...

  5. Realidad de maltrato en las relaciones afectivas entre jóvenes mexicanos durante el noviazgo

    OpenAIRE

    Cortés Ayala, Lourdes

    2016-01-01

    El objetivo de esta Tesis Doctoral fue estudiar la prevalencia de violencia en el noviazgo en jovenes mexicanos a traves de cuatro estudios. El objetivo del primer estudio ex post facto fue establecer la autopercepción de maltrato, así como los sentimientos de miedo y atrapado que existen entre los miembros de una relación de pareja, y determinar si hay diferencias en la prevalencia de los diferentes tipos de violencia o victimización entre los que se perciben maltratados y los que no, tenien...

  6. Les concerts européens à la radio dans l'entre-deux-guerres : mise en ondes d'une métaphore diplomatique

    NARCIS (Netherlands)

    Laborie, L.; Lommers, S.B.

    2008-01-01

    L’expression « concert européen » s’applique à la fois aux relations diplomatiques tissées entre les Etats au xixe siècle et à la diffusion d’émissions musicales à l’échelle continentale entre 1929 et 1939. Au-delà des prouesses techniques, l’ambition culturelle et pacifiste de ces concerts

  7. Causalidade entre as principais bolsas de valores do mundo

    Directory of Open Access Journals (Sweden)

    Hiron Pereira Farias

    2010-04-01

    Full Text Available O objetivo deste trabalho foi analisar os mercados dos países emergentes que fazem parte do Bric, com exceção da Índia, buscando mostrar como os mercados do Brasil, da Rússia e China se comportam entre si e em relação ao mercado dos Estados Unidos. Analisou-se também como alguns países desenvolvidos do grupo G8, Estados Unidos, Reino Unido e Japão, se comportam. Em cada análise, ajustou-se um modelo VAR e buscou-se verificar o grau de dependência dentro e entre cada grupo, utilizando teste de causalidade de Granger, critérios de seleção de modelos, função resposta a impulso e decomposição da variância do erro de previsão. Nas análises realizadas, os mercados brasileiro e americano mostraram forte influência sobre os demais mercados, e, na análise entre os grupos, consideraram-se o mercado dos Estados Unidos do grupo ERJ e todos os mercados emergentes do grupo BRC. O mercado americano mostrou forte influência sobre os outros mercados.

  8. La Vocación entre los Aspirantes a Maestro

    Directory of Open Access Journals (Sweden)

    Encarnación Sánchez Lissen

    2003-01-01

    Full Text Available El contenido que ofrecemos en este artículo hace referencia a la dimensión vocacional de los aspirantes a maestro. Tradicionalmente, la enseñanza se ha considerado como una profesión genuinamente vocacional; una circunstancia que, sin embargo, no siempre le ha favorecido. En estos momentos, a pesar de las dificultades que rodean la tarea docente, existe un alto número de estudian-tes que optan por la enseñanza y acceden a las Escuelas de Magisterio. Real-mente, nos podríamos preguntar si el docente -nace o se hace- vocacional hacia esta actividad profesional. Aportamos para ello, los datos de una investigación realizada entre estu-diantes de la Universidad de Sevilla, donde se viene a demostrar por un lado que, muchos eligieron la carrera sin tener un verdadero interés por ella; y por otro, que las Escuelas de Magisterio son en muchos casos, un motor esencial para llegar a despertar o, a descubrir entre los estudiantes, su verdadero interés e inclinación por la enseñanza. Posiblemente, desarrollar actitudes vocaciona-les entre tos aspirantes a maestro es, también, una labor implícita de la Forma-ción Inicial de Maestros

  9. Obtenção de substratos cerâmicos no sistema Si-Al-O-N-C empregando polissiloxanos e carga de Si e Al2O3 Ceramic tapes of Si-Al-O-N-C compounds using mixtures of polyssiloxane and Si-Al2O3 fillers

    Directory of Open Access Journals (Sweden)

    R. M. Rocha

    2005-03-01

    Full Text Available A técnica de processamento de colagem por fita (tape casting tem sido amplamente utilizada na obtenção de cerâmicas para diferentes aplicações: substratos cerâmicos e estruturas planares em multicamadas para circuitos integrados e capacitores; eletrólitos sólidos para células a combustível e sensores; cerâmicas piezoelétricas para atuadores e transdutores; membranas de separação para micro-filtragem; compósitos estruturais e trocadores de calor. Neste trabalho, a técnica convencional de colagem por fita foi adaptada com a utilização do processo de pirólise controlada de misturas de polímeros e carga, empregando-se polissiloxanos e cargas de silício e alumina nas suspensões. Foram preparadas suspensões com 60% vol. de fase polimérica (polissiloxanos e metil-trietoxi-silano e 40% vol. de carga (Si e Al2O3, com diferentes concentrações dos polímeros e das cargas. As amostras na forma de substratos foram pirolisadas em atmosfera de nitrogênio a 1400 °C/2 h e 1500 °C/2 h, sendo convertidas em materiais cerâmicos no sistema Si-Al-O-N-C. O processo de pirólise foi caracterizado até a temperatura de 1000 ºC por análise termogravimétrica. As cerâmicas foram caracterizadas quanto às fases formadas, microestrutura, massa específica aparente e condutividade térmica. Os substratos cerâmicos apresentaram porosidade relativamente alta (entre 12 e 22% e baixa condutividade térmica (entre 3 e 8 W/m.K, sendo constituídos por fases cristalinas de beta-SiC, Si2ON2, O'-SiAlON, Al2O3, mulita e fase amorfa de SiOC; o Si foi observado nas amostras pirolisadas a 1400 ºC.The tape casting technique has been widely used to prepare ceramic tapes for different applications: ceramic substrates and multilayer planar structures for integrated circuits and capacitors, solid electrolytes for fuel cells and sensors, piezoelectric ceramics for actuators and transducers, membrane systems for micro-filtration, structural composites and

  10. Aproximações entre a obra de Júlio Verne e o ensino de física

    OpenAIRE

    Ferreira, Júlio César David [UNESP

    2011-01-01

    Buscamos uma aproximação entre dois campos do conhecimento que envolvem diferentes gêneros de linguagem: a literatura de ficção científica e a física. Partimos do pressuposto de que todo professor é professor de leitura, e como decorrência, todas as formas de leitura se relacionam e criam entre si pontos de apoio para a construção de sentidos. Assim, na obra de Júlio Verne, procuramos por elementos associados ao conteúdo de física do Ensino Médio. Nos livros Viagem ao Centro da Terra, Vinte M...

  11. Violencia contra mujeres embarazadas entre las usuarias del Instituto Mexicano del Seguro Social: un estudio sobre determinantes, prevalencia y severidad

    OpenAIRE

    Roberto Castro; Gregorio Agustín Ruiz; María de la Luz Arenas Monreal; Sergio Juárez Márquez; Nora Barrios Martínez Rojas

    2002-01-01

    Se presentan los resultados de una encuesta entre 446 mujeres usuarias de los servicios de salud del Instituto Mexicano del Seguro Social (IMSS) en Morelos, que se encontraban en su tercer trimestre de embarazo. El objetivo era indagar si la violencia contra mujeres se incrementa durante el embarazo o si, por el contrario, disminuye. Se encontró que la prevalencia no varió en ambos periodos (aproximadamente 15 por ciento, en general). En cambio, la severidad de l...

  12. Teoría social: Las relaciones entre Europa y Estados Unidos

    Directory of Open Access Journals (Sweden)

    JOSÉP PICÓ LÓPEZ

    1997-01-01

    Full Text Available la sociologia mundial perderia la comprension de su perspectiva y la variedad de sus enfoques respecto a la realidad social si continua sufriendo la estandarizacion de la sociologia profesional americana. la sociologia europea necesita resistir a esta tendencia de la misma manera en que europa ha de resistir la macdonalizacion de la cultura con el fin de preservar la diversidad de si misma y el mundo. contra esta tesis de r. münch, jeffrey c. alexander cuestiona la forma particular en que el sociologo aleman investiga la dimension social de la ciencia y el reduccionismo de su enfoque, es decir, la asimetria entre las causas sociales y la logica teorica en su analisis de la sociologia europea y americana. este articulo trata de situar, resumir y clarificar algunos de los temas de esta polemica teorica.

  13. El tratado secreto del Barón de Río Branco: la alianza entre Brasil y Ecuador, 1904

    Directory of Open Access Journals (Sweden)

    Luís Cláudio Villafañe G. Santos

    2016-06-01

    Full Text Available Es casi desconocida en las historiografías de Brasil y Ecuador la existencia de un tratado militar secreto entre ambos países, rmado el 5 de mayo de 1904, dirigido contra las pretensiones territoriales de Perú. El artículo estudia una creciente tensión entre Brasil y Perú, que disputaban un área de 442 mil kilómetros cuadrados en la Amazonía. Por iniciativa del Barón de Río Branco, se rmó un tratado secreto de alianza militar entre Brasil y Ecuador. Si bien este acuerdo no fue raticado por los países rmantes, fue de suma importancia para forzar al gobierno peruano a iniciar negociaciones con Brasil, que años más tarde resultaron en el tratado de límites entre los dos países.

  14. Relación entre variables neurocognitivas y personalidad en delincuentes

    Directory of Open Access Journals (Sweden)

    Juan Antonio Becerra García

    2014-12-01

    Full Text Available Recientes estudios muestran que rasgos de personalidad del Modelo de los Cinco Factores y funciones neurocognitivas frontales comparten una misma base neurobiológica. En población penitenciaria las relaciones entre estas funciones y rasgos ha sido poco explorada. Este estudio pretende examinar la relación entre personalidad y funciones neurocognitivas en delincuentes y determinar si las medidas de funcionamiento neurocognitivo frontal contribuyen a predecir algún porcentaje de varianza en rasgos de personalidad de muestras penitenciarias. Noventa y nueve hombres (distribuidos en grupos: agresores sexuales de adultos, delincuentes no sexuales y grupo control realizaron el Inventario de Personalidad NEO de Cinco Factores (NEO-FFI y el Trail Making Test (TMT, partes A y B. La ejecución en la parte A del TMT se relaciono con el nivel de Extraversión de los delincuentes sexuales y con el nivel de Neuroticismo de delincuentes no sexuales y explica un porcentaje significativo de la varianza de estos dominios de personalidad en ambos grupos. En conclusión, la relación entre el funcionamiento neurocognitivo y la personalidad parece ser diferente en función del tipo de delito cometido, aunque los resultados deben ser interpretados de forma preliminar.

  15. Entre/Plantas

    OpenAIRE

    Montoro Coso, Ricardo; Sonntag, Franca Alexandra

    2014-01-01

    La palabra Inter-és proviene etimológicamente de las palabras latinas inter y esse; y significa “lo que está-entre dos o más personas, o sea lo que las une pero también las separa”. Los prefijos inter- y entre-, en la mayor parte de los casos, describen estados o acciones ambiguas de los términos que preceden. De esta operación aditiva surgen maclas de vocablos; el inter-sticio como la “hendidura o espacio que media entre dos cuerpos o entre dos partes de un mismo cuerpo”; y así sucesivamente...

  16. Una coexistencia rítmica para las duraciones (entre Bergson y Deleuze

    Directory of Open Access Journals (Sweden)

    Cristóbal Durán Rojas

    Full Text Available Resumen: La intención del presente artículo es reexaminar el concepto bergsoniano de Duración entendido como coexistencia de niveles de multiplicidad heterogéneos. Si bien dicho concepto ha sido pensado a partir de una comprensión que podría ser caracterizada como continuista, el mismo Bergson evitará confundir dicha continuidad con la idea de homogeneidad. Intentaremos mostrar que la determinación del concepto de Duración se alcanza al definirla como tensión o entrelazamiento entre sucesión y simultaneidad, y por consiguiente, como una multiplicidad que hace coexistir diferentes flujos de duración. Para ello, Bergson propone la existencia de un Tiempo impersonal y único como base para la relación entre duraciones. Nuestra hipótesis es que esta misma situación puede entenderse mejor si se articula el concepto de ritmo en la obra de Deleuze, concepto ligado íntimamente a las nociones de duración y coexistencia. Mediante los movimientos de contracción, dilatación, reunión y división, el ritmo opera junto a las duraciones disponiéndose como un campo de relación, pudiendo ocupar el lugar que había sido asignado al Tiempo único.

  17. El “consentimiento” negociado entre dos comunidades mineras mexicanas y las trasnacionales Goldcorp y Ternium

    Directory of Open Access Journals (Sweden)

    Blanca Ruth Santos Cordero

    2015-01-01

    Full Text Available En este artículo se busca reconstruir la dinámica de la relación entre empresas trasnacionales y comunidades rurales mexicanas, a partir de dos estudios de caso: la minera canadiense Goldcorp, en Mazapil, Zacatecas, y la italo-argentina Ternium, en San Miguel Arcángel, en Aquila, Michoacán. La hipótesis sostiene que la racionalidad de la máxima ganancia y el cálculo del riesgo están presentes en las negociaciones entabladas entre las comunidades campesinas y las corporaciones. Y, si bien en ellas se ha establecido una hegemonía de la racionalidad económica capitalista, el consentimiento ha sido activo y negociado.

  18. Experiencias de calorimetría diferencial de barrido en aleaciones Al-Si

    Directory of Open Access Journals (Sweden)

    Carolina López-Eckerdt

    2016-01-01

    Full Text Available La observación de agujas características de una transformación displaciva en aleaciones U-Al-Si en el entorno del compuesto U3Si5 evidencia la necesidad de analizar las distintas transformaciones que ocurren durante el enfriamiento utilizando una técnica dinámica de identificación de transformaciones (calorimetría diferencial de barrido. Para evaluar la versatilidad de esta técnica, se estudiaron aleaciones Al-Si con concentraciones de Si entre 0,6% y 7,1% en peso. Se determinaron las temperaturas liquidus y eutéctica de cada aleación y se estimó la entalpía de formación de los precipitados de Si y de la reacción eutéctica. Los resultados reproducen las temperaturas de ambas reacciones según el diagrama de equilibrio del sistema binario Al-Si. Para el cálculo de las entalpías de transformación resulta indispensable obtener el porcentaje de fase transformada por otras técnicas de caracterización una vez finalizado el ensayo.

  19. Microestructura y propiedades mecánicas del SiC biomórfico obtenido a partir de eucalipto

    Directory of Open Access Journals (Sweden)

    Presas, M.

    2005-12-01

    Full Text Available The development of cellular ceramics with a biological structure, like bones and wood, has been a matter of interest in recent years. A low density highly interconnected structure, perfected by evolution, rises as the principal advantage of these materials. In the case of biomimetic SiC (biomorphic SiC, or bioSiC, the fabrication process technique is quite simple: a piece of wood is pyrolysed and is infiltrated with molten silicon after, the final product is a composite Si/SiC, which replicates the wood anisotropic microstructure This work focus on the mechanical properties of bioSiC fabricated using eucalyptus wood as precursor (hard wood with a bimodal channel distribution. It has been studied the mechanical behavior of this bioSiC (compression strength, flexure strength, fracture toughness and elastic modulus between 25 and 1350 oC. It is also discussed the relationship between mechanical behavior of the material and its microstructure.

    El desarrollo de materiales cerámicos con una estructura de tipo celular, similar a la del hueso o la madera, ha sido una cuestión que ha suscitado un gran interés en los últimos años. Su atractivo se debe al hecho de poseer una estructura porosa altamente interconectada de baja densidad, perfeccionada por la evolución. En el caso del SiC biomórfico (bio-SiC el proceso de fabricación es sencillo: se piroliza una pieza de madera y a continuación se inyecta con silicio líquido, el material así obtenido es un compuesto Si/SiC en el que el SiC mimetiza la estructura de la madera original. En este trabajo se estudian las propiedades mecánicas del SiC biomórfico fabricado a partir de eucalipto (madera dura con una distribución bimodal de poros. Se ha estudiado el comportamiento mecánico del mismo (resistencia a compresión, resistencia a flexión, tenacidad de fractura y módulo de elasticidad entre 25 y 1350 oC. Asimismo, se discute la relación entre el comportamiento mecánico del material y

  20. Desigualdades de género en sobrepeso y obesidad entre indígenas chontales de Tabasco, México

    OpenAIRE

    Marcelina Cruz-Sánchez; Esperanza Tuñon-Pablos; Martha Villaseñor-Farías; Guadalupe del Carmen Álvarez-Gordillo; Ronald Nigh-Nielsen

    2012-01-01

    Antecedentes: La obesidad se ha convertido en una epidemia global (OMS) y, aunque se sabe que afecta por igual a toda la población, las mujeres aparecen con más obesidad y obesidad central. Se desconoce el porqué de este fenómeno, o si adquiere características específicas entre la población indígena. Objetivo: identificar las desigualdades de género que subyacen al fenómeno del cuerpo con sobrepeso y obesidad entre indígenas chontales de Tabasco. Materiales y métodos: estudio cualitativo con ...

  1. L’approche sociopsychologique de Horkheimer, entre Fromm et Adorno

    Directory of Open Access Journals (Sweden)

    Katia Genel

    2010-08-01

    Full Text Available Le cadre du programme interdisciplinaire de recherche défini par Max Horkheimer dans les années 1930 doit beaucoup à Erich Fromm, qui a introduit la psychologie sociale dans la Théorie critique de la société. Or, une décennie plus tard, Fromm est la cible privilégiée des attaques et sa théorie apparaît désormais comme incompatible avec les positions défendues par Horkheimer et Adorno. Partant de ces tensions qui ont marqué l’histoire de l’École de Francfort, le présent article vise à éclaircir le déplacement qu’elles traduisent sur le plan épistémologique. Si Horkheimer et Fromm partagent des prémisses communes, le premier, dans son travail avec Adorno, se rapproche de manière croissante de la doctrine freudienne alors que le second s’en éloigne. Nous voudrions montrer que l’accord entre Fromm et Horkheimer fut surtout négatif puisqu’il portait sur la critique de Freud : les divergences entre les deux penseurs apparaissent clairement, dès lors qu’on pose en profondeur la question de l’usage de la psychanalyse pour analyser l’un des problèmes centraux de la théorie de la société, l’antagonisme entre individu et société.

  2. Importancia de las diferencias entre actividad-procedimiento-proceso para la autoevaluación institucional universitaria

    Directory of Open Access Journals (Sweden)

    Hernando A. Romero

    2002-01-01

    Full Text Available Se refiere en una amplia reflexión, a que tener clara la diferencia de significados entre actividad, procedimiento-proceso, actividad social, proceso social y personal es muy importante en el campo de la autoevaluación institucional porque si no se reconocen sus diferencias, no se puede aludir correctamente lo que se entiende por actividad académica y las diferencias en el proceso pedagógico

  3. Convergencia de normas contables internacionales entre México y Estados Unidos: evidencia empírica

    Directory of Open Access Journals (Sweden)

    Sergio Demetrio Polo Jiménez

    2015-12-01

    Full Text Available El objetivo de este trabajo es examinar si la adaptación de la normativa contable mexicana a las IFRS ha convertido los principios mexicanos en unas normas de mayor calidad, incrementando su comparabilidad con los US GAAP y reduciendo la manipulación de los resultados. A su vez, nos cuestionamos, de acuerdo con la Teoría de la Agencia, si las diferencias entre las variables contables calculadas bajo la normativa mexicana y americana pueden ser debidas a la interpretación oportunista de los estándares mexicanos por los managers más que a las diferencias en la normativa contable de ambos países. Los resultados sugieren que los esfuerzos para converger las normas contables han incrementado la comparabilidad del resultado contable, si bien esta convergencia se debe también al uso oportunista de la elección de los métodos contables en función de la distinta coyuntura económica.

  4. Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

    DEFF Research Database (Denmark)

    Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

    1986-01-01

    X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

  5. Borges y Calvino: La genesis de la novela Si una noche de invierno un viajero

    Directory of Open Access Journals (Sweden)

    Tea Štoka

    2005-12-01

    Full Text Available El crítico italiano Cesare Segre1   adscribe la génesis de la novela de Calvino Si una noche de invierno un viajero al cuento de Borges Examen de la obra de Herbert Quain, que figura entre los trece cuentos de Ficciones (1944. En este cuento, Borges describe, analiza y comenta las novelas de Herbert Quain inventadas como si fueran obras literarias reales. Las emplaza al mismo nivel de realidad que las obras dramáticas de Shakespeare, las novelas de Henry James y Gustavo Flaubert.

  6. Comportamiento a la corrosión electroquímica de aleaciones MgAl con recubrimientos de materiales compuestos Al/SiCp mediante proyección térmica

    Directory of Open Access Journals (Sweden)

    Pardo, A.

    2010-04-01

    Full Text Available The corrosion protection of Mg-Al alloys by flame thermal spraying of Al/SiCp composite coatings was evaluated by electrochemical impedance spectroscopy in 3.5 wt.% NaCl solution. The volume fraction of SiC particles (SiCp varied between 5 and 30%. The as-sprayed Al/SiCp composite coatings revealed a high number of micro-channels, largely in the vicinity of the SiC particles, that facilitated the penetration of the electrolyte and the subsequent galvanic corrosion of the magnesium substrates. The application of a cold-pressing post-treatment reduced the degree of porosity of the coatings and improved the bonding at the coating/substrate and Al/SiC interfaces. This resulted in improved corrosion resistance of the coated specimens. The effectiveness of the coatings slightly decreased with the addition of 5-30 vol.% SiCp compared with the unreinforced thermal spray aluminium coatings.

    Se estudia, mediante espectroscopía de impedancia electroquímica en solución 3,5 % NaCl, la protección frente a la corrosión de aleaciones Mg-Al recubiertas por proyección térmica con materiales compuestos Al/SiCp. Se varió la fracción de volumen de las partículas de SiC (SiCp entre 5 y 30 %. Los recubrimientos efectuados por proyección térmica revelan un elevado número de microcanales, en la vecindad de las partículas de SiC, que facilitan la penetración del electrolito originando procesos de corrosión galvánica en los substratos de las aleaciones de magnesio. Un tratamiento posterior mediante la aplicación de una presión en frío reduce el grado de porosidad de los recubrimientos y mejora la unión, tanto entre el substrato y el recubrimiento como entre las partículas de aluminio y SiC, mejorando la resistencia a la corrosión de las aleaciones recubiertas. La efectividad de los recubrimientos disminuye ligeramente con la adición de SiCp cuando se comparan con los mismos recubrimientos de aluminio sin refuerzo.

  7. Burnout e intenciones de jubilación anticipada entre empleados mayores

    Directory of Open Access Journals (Sweden)

    Kène Henkens

    2008-01-01

    Full Text Available El tema central de este artículo es la jubilación y el burnout de los empleados mayores. Analizamos si existe una relación entre las dimensiones de agotamiento emocional y despersonalización características del burnout y las intenciones de jubilación de los empleados mayores. Asimismo, se investiga si existe una relación entre las intenciones de jubilación y las características del puesto de trabajo, el apoyo social y la autoeficacia, así como con las citadas dimensiones del burnout. Los datos proceden de una investigación con empleados holandeses y sus parejas (N=2.892. Los resultados permiten ver que la carga laboral excesiva, un trabajo duro desde el punto de vista físico y una ausencia demasiado grande de desafíos están relacionados con los sentimientos de agotamiento emocional. La despersonalización se explica por la escasez de desafíos en el trabajo, la carga laboral excesiva, una falta de apoyo social por parte de los compañeros y una baja autoeficacia. El agotamiento emocional, la despersonalización y las relaciones conyugales explican en gran medida las intenciones de jubilación. El burnout y el proceso de jubilación están muy relacionados, pero parecen ser hasta cierto punto dos procesos diferentes. Mientras que el burnout se determina esencialmente dentro del entorno laboral, los factores externos al trabajo son cruciales en la comprensión de la jubilación.

  8. L’image sonore contemporaine : entre misère symbolique et imaginaire sonore

    Directory of Open Access Journals (Sweden)

    Vincent Tiffon

    2007-05-01

    Full Text Available L’histoire de la musique peut s’écrire comme l’évolution progressive mais déterminante de deux grands paradigmes technologiques, celui de l’écriture et celui du son. L’enregistrement sonore modifie en profondeur l’économie de la musique en inventant notamment de nouveaux modes d’invention du sonore et de nouvelles pratiques d’écoute du sonore. On élargit alors le domaine du musical en inventant l’image sonore. À l’instar des autres arts de studio, la photographie, la cinématographie, la vidéo…, la phonographie prend le réel comme matériau immédiat. L’effet de réalité qui en résulte conduit au glissement progressif de la musique comme objet cultuel (avant le xive siècle, à la musique comme objet industriel (depuis 1970 en passant par la musique comme objet culturel (entre le xive siècle et le xxe siècle ; ce faisant, le risque d’une « désorientation » est bien réel. D’où une cartographie floue entre culture, art et phénomènes de société. L’image sonore semble s’inscrire entre « misère symbolique » et imaginaire, entre l’industrie musicale et l’avant-garde.The history of music can be written as the gradual yet decisive evolution of two great technological paradigms: the paradigms of writing and of sound. Sound recording has profoundly altered the organization of music, notably through the invention of new modes of sound invention and new practices of listening to sound phenomena. It is precisely at this point that the field of music has been widened by the invention of the sound image. After the fashion of the other arts of the studio (photography, cinematography, video and so on, phonography has reality itself as its unmediated material. The resulting reality effect has led to the gradual shift from music as liturgical object (before the 14th century to music as industrial object (since 1970 via music as cultural object (between the 14th century and the 20th century. In

  9. Relação espacial entre a falange distal e o estojo córneo em éguas Campolinas jovens com e sem sinais de obesidade

    Directory of Open Access Journals (Sweden)

    Jéssica F. Magalhães

    Full Text Available RESUMO: Estudos prévios têm demonstrado alterações radiográficas em cascos de equinos obesos. Os objetivos foram estudar, com avaliação radiográfica, a relação espacial entre estojo córneo e falange distal de éguas jovens da raça Campolina com e sem obesidade. Foram utilizadas 22 éguas entre três e cinco anos de idade, sendo analisadas varáveis de adiposidade e medidas radiográficas dos cascos dos membros torácicos de éguas com escore corporal de 5 a 7/9 (Grupo Controle e de 8 a 9 (Grupo Obeso. Foram feitas comparações entre os grupos e correlacionaram-se as variáveis de adiposidade entre si, variáveis adiposidade com variáveis casco e variáveis de casco entre si. Utilizou-se o teste t de Student para variáveis paramétricas e o teste Mann-Whitney para as não-paramétricas, para as medidas de correlação, utilizou o teste de Pearson para duas amostras paramétricas e o teste de Spearman para comparações que envolvam pelo menos uma variável não paramétrica (P<0,05. Os resultados demonstraram que éguas Campolinas obesas, ainda jovens, já apresentam indícios de alteração na relação espacial entre estojo córneo e falange distal.

  10. Esa Curiosa Relación entre la Medicina y la Literatura

    OpenAIRE

    Pinto Zúñiga, Jorge Ricardo

    2013-01-01

    Si a cualquier persona le preguntaran sí existe alguna relación entre la medicina y la literatura, tal vez piense que no existe tal relación. En este artículo, se analiza a ambas ciencias, aún cuando afirmar que la literatura es una ciencia suene un poco ambiguo. Para el formalismo ruso lo es, ya que el objeto de estudio de la Literatura consiste en el estudio del texto por el texto, es decir, lo literario. Lo literario y la literatura son diferentes: la literatura es todo lo que llamamos a u...

  11. Algoritmos paralelos y distribuidos para resolver ecuaciones matriciales de Lyapunov en problemas de reducción de modelos.

    OpenAIRE

    CLAVER IBORRA, JOSE MANUEL

    2011-01-01

    La reducción de modelos para problemas de control de gran tamaño es actualmente uno de los temas fundamentales en teoría de sistemas y control. Entre diversas técnicas existentes, los métodos de truncamiento de estados son los que permiten una mayor precisión en la representación del sistema reducido. Muchos de estos métodos necesitan resolver una o más ecuaciones de Lyapunov (habitualmente acopladas), requiriéndose en ocasiones el factor de Cholesky de su solución. En esta tesis se pesentan ...

  12. Estudio de la contaminación por pesticidas en aguas ambientales de la provincia de Almería

    OpenAIRE

    Martínez Vidal, José Luis; González Rodríguez, Manuel J.; Belmonte Vega, Antonio; Garrido Frenich, Antonia

    2004-01-01

    En este estudio se han determinado más de cuarenta plaguicidas (organofosforados y organoclorados), de entre los más ampliamente utilizados en tratamientos agrícolas en la provincia de Almería (España), en aguas ambientales de ésta área. El análisis de los plaguicidas se realizó mediante microextracción en fase sólida (SPME) acoplada a cromatografía de gases con detección en modo de espectrometría de masas en tándem (GC-MS/MS). Se tomaron 9 muestras de aguas superficiales y 15 muestr...

  13. Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

    International Nuclear Information System (INIS)

    Leung, To Chi.

    1991-01-01

    A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

  14. Burnout e intenciones de jubilación anticipada entre empleados mayores - Burnout and early retirement intentions among older employees

    NARCIS (Netherlands)

    Henkens, C.J.I.M.; Leenders, M.

    2009-01-01

    El tema central de este artículo es la jubilación y el burnout de los empleados mayores. Analizamos si existe una relación entre las dimensiones de agotamiento emocional y despersonalización características del burnout y las intenciones de jubilación de los empleados mayores. Asimismo, se investiga

  15. La sauvegarde des grandes oeuvres de l'ingénierie du XXème siècle

    CERN Document Server

    Graf, Franz

    2016-01-01

    Consacré à la sauvegarde des grandes oeuvres de l’ingénierie du XXe siècle, ce premier numéro des Cahiers du TSAM explore le devenir de certaines des plus remarquables et emblématiques structures en béton du siècle passé. A travers les fi gures d’héroïques constructeurs, il interroge l’héritage construit des ingénieurs, convoquant les plus audacieux d’entre eux (Freyssinet, Isler, Maillart, Nervi, Vierendeel, etc.). Alors que la sauvegarde de l’architecture du XXe siècle s’est récemment constituée en discipline à part entière, la préservation des ouvrages de l’ingénierie de cette période est encore balbutiante. Considérés trop souvent sous le seul point de vue de la sécurité ou de la maintenance, ces ouvrages s’avèrent parfois de véritables chefs-d’oeuvre, jalons d’un «art de l’ingénieur» à la frontière entre performance technique et beauté plastique. Ces cahiers sont donc l’occasion d’initier, à l’appui d’exemples et de projets de sauvegarde con...

  16. Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

    International Nuclear Information System (INIS)

    Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

    2008-01-01

    Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

  17. CONSTRUÇÃO SOCIAL DE SENTIDOS SOBRE A RAVIDEZMATERNIDADE ENTRE ADOLESCENTES

    Directory of Open Access Journals (Sweden)

    Nayara Bueno de Araujo

    2015-01-01

    Full Text Available Se buscó comprehender la construcción social de sentidos sobre embarazo-maternidad entre adolescentes embarazadas. Estudio explicativo, realizado en 2014, con 12 adolescentes, por medio de entrevista individual y grupal, observación del contexto local, consulta al documentos y preceptos de Análisis de Discurso Crítica de Fairclough. Se encontró el sentido de compatibilidad entre el embarazo y adolescencia y de contraposición al discurso dominante de embarazo como un problema. El evento respondía al que las adolescentes proyectaban para si, en uno contexto restringido de oportunidades sociales. Lo valoran con base en un ideal social de maternidad y de constitución familiar, prebendo reconocimiento social, comprobación de feminidad y mayor poder y autonomía. Sin embargo, esas ganancias se muestran atravesados por dificultades percibidas, como enfrentar el juicio familiar y el “doloroso” parto. La comprensión contextualizada de estos sentidos y su contenido social y ideológico es esencial al desenvolvimiento de mayor grado de autonomía-responsabilidad de adolescentes.

  18. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    International Nuclear Information System (INIS)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-01-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  19. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    Science.gov (United States)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  20. De l’amour et du mariage. Une correspondance familiale au xixe siècle

    OpenAIRE

    Dauphin, Cécile; Poublan, Danièle

    2013-01-01

    L’article se propose d’explorer ce qui est dit du mariage et de l’amour dans la correspondance d’une famille bourgeoise qui couvre plusieurs générations sur un large xixe siècle. Trois épisodes ont été retenus qui permettent d’observer bien des tensions entre mariage arrangé et mariage d’inclination. D’abord, au début du siècle, la correspondance d’un jeune homme à l’aube d’une brillante carrière scientifique explicite les « raisons » sociales et économiques qui déterminent son choix matrimon...

  1. Sodome à Paris : protohistoire de l’homosexualité masculine fin XVIIIe-milieu XIXe siècle

    OpenAIRE

    Pastorello, Thierry

    2018-01-01

    Entre la fin du XVIIIe siècle et jusqu’aux alentours du milieu du XIXe siècle, l’homosexualité masculine, comme catégorie désignant et stigmatisant certains hommes, est en voie de construction. Nous avons pris pour exemple Paris. Ce travail examine ce processus, par un croisement des discours et des vécus. Le cadre parisien offre un laboratoire suffisamment important : les faits d’homosexualité peuvent être observés à travers tout un ensemble de comportements et de pratiques identifiables dan...

  2. RELACIÓN ENTRE DECISIONES ARBITRALES Y VARIABLES DEPORTIVAS EN EL FÚTBOL PROFESIONAL DE COSTA RICA

    Directory of Open Access Journals (Sweden)

    María Clara Rodríguez

    2002-12-01

    Full Text Available Con el objetivo de determinar objetivamente si existen algunas tendencias en los juicios arbitrales del fútbol costarricense, específicamente en cuanto a amonestaciones y expulsiones, se analizaron 575 partidos de primera y segunda división jugados durante los años 2001 y 2002, a partir de los informes arbitrales oficiales. Se confirmó la hipótesis de la ventaja para el equipo local, así como la tendencia a compensar las sanciones entre los equipos contrincantes, especialmente con respecto a las expulsiones; no hubo diferencias en función del nivel de los árbitros, ni se evidenciaron sesgos en función de los equipos. Se hallaron diferencias significativas individuales entre los árbitros. También se encontraron diferencias significativas para tarjetas rojas (TA y tarjetas amarillas (TR entre primer y segundo tiempo, y con relación al número total de goles marcados. En conclusión, se observó mayor discriminación en las decisiones arbitrales frente a las TR y mayor homogeneidad frente a las TA.

  3. Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

    International Nuclear Information System (INIS)

    Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

    1990-01-01

    Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

  4. Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

    1997-01-01

    Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

  5. Correlações entre caracteres quantitativos em milho pipoca Correlation among quantitative traits in popcorn maize

    Directory of Open Access Journals (Sweden)

    Valéria Carpentieri-Pípolo

    2002-12-01

    Full Text Available Em um programa de melhoramento, o conhecimento da grandeza das associações entre caracteres de interesse, é de fundamental importância na obtenção de populações melhoradas. O presente trabalho teve como objetivo determinar as correlações genotípicas, fenotípicas e ambientais entre caracteres quantitativos em milho pipoca. Foram avaliados nove genótipos de milho pipoca dispostos no campo em delineamento em blocos casualizados com oito repetições. Os genótipos UEL ZP, UEL SI e UEL PAP revelaram maiores capacidades de expansão (27,50; 27,15 e 24,40 respectivamente e número de grãos por volume (244,75; 248,50 e 248,75 respectivamente. A capacidade de expansão revelou correlação fenotípica positiva com o tamanho da pipoca e com o número de grãos por volume, e correlação negativa com massa de grãos por planta. Os caracteres massa de grãos por planta e peso total da espiga revelaram correlações fenotípicas e genotípicas positivas entre si, o que possibilita a utilização de um ou outro na seleção, optando-se pelo que melhor convier aos propósitos do programa de melhoramento.Knowledge of the size of the association among traits of interest is of fundamental importance in a breeding program to allow genetic progress. The genotypic, phenotypic and environment correlation were studied among quantitative traits of popcorn maize. Nine popcorn maize genotypes were assessed. A randomized complete block design with eight replications was used. The UEL ZP, UEL SI and UEL PAP. genotypes which had greatest expansion capacity (27.50; 27.15 and 24.20, respectively, also had the greatest values for the number of grains per volume (244.75; 248.50 and 248.75, respectively. The expansion capacity correlated positively with the popcorn size and with number of grains per volume and negatively with plant yield. The traits plant yield, and total ear weight showed positive phenotypic and genotypic correlation that permits the choice of

  6. Características individuales y actitudes discriminatorias hacia la mujer en México: ¿existen diferencias entre las regiones?

    Directory of Open Access Journals (Sweden)

    Juan José Argaez

    2011-01-01

    Full Text Available Con base en los resultados de la Primera encuesta nacional sobre discriminación en México, en este artículo se examina la relación entre factores individuales y las actitudes discriminatorias hacia la mujer. El objetivo es evaluar empíricamente la influencia de estos factores en lo individual, y descubrir si existe alguna diferencia entre las regiones que lleve a la persistencia de actitudes discriminatorias. Los resultados concuerdan con las expectativas en cuanto a los factores individuales, y revelan que los habitantes del norte y centro de México mantienen actitudes discriminatorias más intensas que la población del sur del país.

  7. Exposición a violencia entre los padres de adolescentes y adultos jóvenes víctimas de alguna conducta de maltrato en el noviazgo

    Directory of Open Access Journals (Sweden)

    César Armando Rey-Anacona

    2011-01-01

    Full Text Available Esta investigación tuvo como objetivo determinar si la exposición a violencia entre los padres podría relacionarse con el informe de haber sido objeto de algún tipo de maltrato por parte de la pareja en el noviazgo. Participaron 149 varones y 254 mujeres entre 15 y 35 años, solteros y sin hijos, comparándose los que informaron al menos una conducta maltratante con los que no, en relación con la exposición a violencia entre los padres. Se encontró que un porcentaje mayor de los participantes que informaron maltrato, presenciaron al menos un acto de violencia entre sus padres, comparado con el porcentaje de participantes que no reportaron maltrato, siendo esta relación más fuerte estadísticamente entre las mujeres que entre los varones y entre los adultos jóvenes que entre los adolescentes. Estos resultados señalan que dicha exposición podría facilitar la victimización y debería contemplarse en los programas de prevención.

  8. Cuidado de si e relações de poder: enfermeira cuidando de outras mulheres

    Directory of Open Access Journals (Sweden)

    Ana Renata Moura Rabelo

    Full Text Available RESUMO Objetivo: analisar o cuidado de si de enfermeiras e as relações de poder estabelecidas por elas no cuidado de outras mulheres. Método: revisão integrativa da literatura publicada entre os anos de 2005 e 2015. Compuseram a amostra 25 publicações. Resultados: estado da arte majoritariamente qualitativo com domínio de referenciais de uma perspectiva libertadora, pautada na humanização, autonomia e empoderamento como estratégia de redução de riscos na prática do cuidado à mulher. Os achados sugerem relações de poder solidificadas entre enfermeiras-mulheres, centradas no domínio profissional com forte concentração na formação da enfermeira sob o discurso patriarcal e de normalização da sociedade. Alguns estudos ponderam a importância da compreensão do poder na forma capilar, operando nos corpos dos indivíduos. Conclusão: há pouca discussão sobre o cuidado de si de enfermeiras e dos efeitos na sua prática profissional, indicando lacunas no conhecimento neste campo.

  9. Parrains et voisins? Espace et parrainage en banlieue parisienne au XIXe siècle

    Directory of Open Access Journals (Sweden)

    Vincent Gourdon

    2017-07-01

    Full Text Available Située à proximité de Paris, Aubervilliers, au cours du XIXe siècle, connaît une forte croissance de sa population et une transformation de son tissu social avec l’arrivée de migrants et l’orientation des activités économiques vers l’industrie au détriment de l’agriculture traditionnelle. Dans le cadre d’une réfl exion générale concernant la place du parrainage dans la construction des liens sociaux et particulièrement de la sociabilité communautaire à l’échelle locale, la distribution spatiale des parrains et marraines des enfants baptisés dans l’unique église paroissiale de la localité a été analysée sur trois siècles, afi n de montrer la fi n progressive du parrainage entre voisins appartenant à une même communauté, la paroisse, entre XVIIIe siècle et XIXe siècle, et l’élargissement du bassin de recrutement des parents spirituels, celui-ci témoignant du recul de l’esprit communautaire ancien. Au XIXe siècle, quand les choix dans la parenté n’amènent pas à aller quérir des parrains loin d’Aubervilliers, d’autres types de parrains voisins apparaissent: les gens du quartier, voire les voisins d’immeuble, prennent alors une place importante, notamment dans le quartier ouvrier peuplé de migrants de Quatre Chemins-Champ Blanc, au sud de la commune. Il ressort ainsi de l’analyse détaillée des baptêmes de 1881 que l’espace de la banlieue était loin d’être uniforme. Par beaucoup d’aspects dont le parrainage, Aubervilliers était bien une «périphérie» de Paris (cf. la proportion de parrains et marraines vivant dans la capitale, mais en son sein plusieurs quartiers, où des logiques de choix diff érentes étaient mises en oeuvre au moment des baptêmes, coexistaient.

  10. Asociación entre enfermedad cardiovascular y anticuerpos contra Chlamydia pneumoniae

    Directory of Open Access Journals (Sweden)

    García-Elorriaga Guadalupe de los A

    2002-01-01

    Full Text Available Objetivo. Precisar si existe asociación entre enfermedad cardiovascular (ECV y anticuerpos contra Chlamydia en población mexicana. Material y métodos. Estudio transversal, realizado en la Unidad de Investigación en Inmunología e Infectología -Hospital de Infectología del Centro Médico Nacional La Raza (CMNR- y en el Servicio de Cirugía Cardiovascular y Asistencia Circulatoria, del Hospital General del CMNR, Instituto Mexicano del Seguro Social (IMSS, de agosto de 1998 a abril de 2000. Se determinaron anticuerpos IgG e IgM contra C. psittaci, C. trachomatis y C. pneumoniae mediante microinmunofluorescencia, en suero de 70 pacientes con ECV hospitalizados en el CMNR, mayores de 30 años, de uno u otro sexo, y se compararon con 140 sanos, pareados por edad y sexo. Se utilizaron muestras aleatorias simples, con un tamaño poblacional de 110, una prevalencia de 50% y un nivel de confianza de 99%. Para establecer la diferencia entre las proporciones de los títulos se utilizó ji cuadrada y se calculó la razón de momios. Resultados. El 94.3% (66/70 de los pacientes presentó IgG en contra de C. pneumoniae vs 37% (52/140 de los individuos sanos (p<0.001. Conclusiones. Existe una fuerte asociación entre anticuerpos IgG hacia C. pneumoniae y ECV.

  11. El rostro bifronte de la ciencia: notas sobre la relación entre ciencia e ideología en Habermas y Althusser

    Directory of Open Access Journals (Sweden)

    Lisandro Alejo Martinez

    2015-06-01

    Full Text Available El presente trabajo aborda la relación entre ciencia e ideología a través de la revisión crítica de las perspectivas de Jürgen Habermas y Louis Althusser. Nos interesa indagar sobre el carácter difuso de los límites entre ambos conceptos en el contexto del capitalismo tardío, de donde surge la pregunta acerca de si es posible pensar la ciencia como ideología. Si fuera así, ¿cuáles son los rasgos de la ideología y de la ciencia orientados a trascender la oposición entre verdad y falsedad? Para responder a dichos interrogantes, se propone llevar a cabo una lectura doble: leer a Habermas con Althusser y a Althusser con Habermas. En principio, se trata de leer a Habermas desde Althusser, con el propósito de analizar las implicancias procedentes de su crítica de las ideologías a través de un criterio normativo, cuyo punto de llegada es la comunidad de comunicación libre de dominio. Luego, en un segundo momento, se lleva a cabo una lectura de Althusser desde Habermas, con el objetivo de formularle a Althusser los interrogantes habermasianos sobre la función ideológica de la ciencia en el capitalismo tardío.

  12. Sub-barrier fusion of Si+Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

    2017-11-01

    The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  13. Sub-barrier fusion of Si+Si systems

    Directory of Open Access Journals (Sweden)

    Colucci G.

    2017-01-01

    Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  14. Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO{sub 2}/Si and SiO{sub 2}/SiC structures

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, H., E-mail: koba771@ybb.ne.jp [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2010-07-15

    We have developed low temperature formation methods of SiO{sub 2}/Si and SiO{sub 2}/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO{sub 3} aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO{sub 2} layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO{sub 2} gap-state density, and (iii) high band discontinuity energy at the SiO{sub 2}/Si interface arising from the high atomic density of the NAOS SiO{sub 2} layer. For the formation of a relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in {approx}40 wt% HNO{sub 3} and azeotropic HNO{sub 3} aqueous solutions, respectively. In this case, the SiO{sub 2} formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO{sub 2} layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO{sub 2} layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO{sub 2} layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method

  15. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  16. Correlación entre los resultados de valoración funcional y de fuerza de la rodilla en pacientes con rotura del ligamento cruzado anterior

    OpenAIRE

    Álvarez Santana, David

    2016-01-01

    Programa de doctorado: Avances en Traumatología. Medicina del Deporte. Cuidado de Heridas. La fecha de publicación es la fecha de lectura [ES]Objetivos: Determinar si existen diferencias en la fuerza isométrica en la rodilla afecta con respecto a la sana en pacientes con rotura de LCA y un grupo control. Estudiar si existe correlación significativa entre el desplazamiento tibial, la fuerza isométrica generada por la musculatura de las rodillas, los resultados en cuestionarios de valoración...

  17. Variación en loci isoenzimáticos entre machos y hembras de Lutzomyia shannoni (Dyar (Diptera: Psychodidae de Colombia

    Directory of Open Access Journals (Sweden)

    Estrella Cárdenas

    2000-12-01

    Full Text Available Se analizaron por sexo poblaciones silvestres de Lutzomyia shannoni de tres localidades distantes entre si: Palambi (Nariño, Cimitarra (Santander y Chinácota (Norte de Santander, con el fin de establecer la variación en 11 isoenzimas. Estas muestras se compararon con ejemplares de una colonia mantenida en el Laboratorio de Entomologia del INS desde 1992. Se utilizó el sistema de electroforesis vertical en geles de poliacrilarnida al 6%. Se encontró una heterocigosidad promedio entre 18.5 y 24,7% en las hembras silvestres y entre 13,5 y 19.4% entre los machos silvestres. La heterocigosidad promedio en las hembras de la colonia fue de 14,8% mientras que en los machos fue de 20.1%. Se detectaron entre 2,0 y 2,5 alelos por locus. La distancia genética de Nei entre las poblaciones fue baja y osciló entre 0,005 y 0,073. En la muestra de la colonia de 79 individuos. el locus Gpifue homocigoto en todas las hembras y heterocigoto en todos los machos. Aunque esta observación es probablemente una consecuencia de la colonización, indica que el locus Gpi está fuertemente unido a los cromosomas que determinan el sexo, con el alelo Gpi0,62 unido al locus que determina hembras y el alelo Gpi0,72 asociado con el locus que determina machos.

  18. RELAÇÃO ENTRE ENFERMEIROS E MÉDICOS NO HOSPITAL DAS CLÍNICAS DA UNIVERSIDADE FEDERAL DE GOIÁS: A PERSPECTIVA DO PROFISSIONAL DE ENFERMAGEM

    OpenAIRE

    ANA MARIA DE OLIVEIRA; ANDRÉ MOREIRA LEMES; BRUNA TEIXEIRA ÁVILA; CAROLINA ROCHA MACHADO; ELISA ORDONES; FERNANDA SOUZA MIRANDA; FERNANDA LOYOLA E SILVA; HERMANN SOARES GOETZ; JOSÉ OSCAR FERREIRA DE MIRANDA; JULIANE MOREIRA BARBOSA; LAHIS RIBEIRO LEÃO

    2010-01-01

    El conflicto en la relación entre médicos y enfermeras es un tema tabú en los servicios de salud y poco discutido en la literatura. Se sabe que el conflicto entre estas dos profesiones, identificados como los principales responsables de la atención al paciente, se debe a la combinación de diversos factores que van desde la creación del equipo multidisciplinario hasta las cuestiones salariales. El estudio tiene por objeto determinar si desde el punto de vista de enfermeria, hay un conflicto en...

  19. La publicidad encubierta en Instagram : análisis comparado de la regulación de la publicidad encubierta entre España y Estados Unidos

    OpenAIRE

    Monerris Valentí, Paula

    2017-01-01

    El present treball constitueix una anàlisi comparat entre Espanya i els Estats Units en referència a la publicitat encoberta a la plataforma Instagram. El principal objectiu és el d'investigar si hi ha diferències significatives en la manera com aquests països regulen i autoregulen aquesta pràctica. El presente trabajo constituye un análisis comparado entre España y Estados Unidos en referencia a la publicidad encubierta en la plataforma Instagram. El principal objetivo es el de investigar...

  20. Disociación entre atribución de discapacidad explícita e implícita hacia adultos mayores en estudiantes de psicología

    OpenAIRE

    Serrani Azcurra, Daniel Jorge Luis

    2010-01-01

    Los adultos mayores son objeto de estereotipos negativos que pueden explorarse por medidas explícitas e implícitas. Dado que existen discrepancias entre ambas, es conveniente combinarlas. Son escasos los estudios sobre atribución de discapacidad hacia adultos mayores por parte de jóvenes en el ámbito educativo. El objetivo del estudio que se informa fue evaluar si existe una disociación entre las medidas implícitas y explícitas de atribución de discapacidad hacia adultos mayores en una cohort...

  1. Un pequeño aumento en el espaciado entre letras favorece la lectura en niños disléxicos

    Directory of Open Access Journals (Sweden)

    Victoria Panadero

    2012-09-01

    Full Text Available Varias investigaciones recientes han mostrado que un ligero aumento del espaciado entre las letras (respecto al espaciado estándar produce tiempos de lectura más rápidos en los niños con dislexia, así como mejoras en la comprensión de los textos. Si bien el aumento en el espaciado de las letras no “cura” la dislexia, sí permite una mejora en el proceso de lectura. Es importante remarcar que la posibilidad de modificar el espaciado entre letras se encuentra disponible en los programas de procesamiento de texto. Creemos que dicha opción debería estar disponible próximamente en los libros electrónicos.

  2. Microstructure and Mechanical Property of SiCf/SiC and Cf/SiC Composites

    International Nuclear Information System (INIS)

    Lee, S P; Cho, K S; Lee, H U; Lee, J K; Bae, D S; Byun, J H

    2011-01-01

    The mechanical properties of SiC based composites reinforced with different types of fabrics have been investigated, in conjunction with the detailed analyses of their microstructures. The thermal shock properties of SiC f /SiC composites were also examined. All composites showed a dense morphology in the matrix region. Carbon coated PW-SiC f /SiC composites had a good fracture energy, even if their strength was lower than that of PW-C f /SiC composites. SiC f /SiC composites represented a great reduction of flexural strength at the thermal shock temperature difference of 300 deg. C.

  3. Profundidade superficial e superficialidade profunda: O dilema da pesquisa em ciências humanas entre a disciplinaridade e a interdisciplinaridade

    Directory of Open Access Journals (Sweden)

    Cláudio Clécio Vidal Eufrausino

    2008-06-01

    Full Text Available O objetivo deste artigo é discutir a necessidade de repensar o conflito entre disciplinaridade e interdisciplinaridade como se fossem opostos irreconciliáveis. Tentamos demonstrar que a riqueza das ciências humanas cresce através do confronto aberto entre estas duas modalidades de pesquisa, a fim de serem preenchidas as lacunas de ambas. Por meio desta análise, procuramos dar um novo significado para os termos superficialidade e profundidade, tentando superar a antiga oposição que considera profundidade como uma coisa boa em oposição ao caráter superficial. Ao fazermos isto, estamos revendo, com auxílio da teoria de Carlo Ginsburg, a oposição entre retórica e prova, ou, em outros termos, entre factualidade e demonstração argumentativa. Através do enfrentamento dos limites tanto da disciplinaridade quanto da interdisciplinaridade, tentamos apontar novas direções científicas, mostrando soluções marcantes não pelo poder que contêm em si mesmas, mas pela capacidade delas de estimular uma freqüente revisão dos paradigmas das ciências.

  4. Diversidad genética, entre y dentro de los mayores grupos humanos

    Directory of Open Access Journals (Sweden)

    Barbujani, G.

    2003-01-01

    Full Text Available Varios estudios están de acuerdo cuando reportan que cerca del 85% de la diversidad del ADN autosomal y de los loci de las proteínas se debe a diferencias entre individuos dentro de la misma población, mientras que las diferencias entre los grupos de diferentes continentes son responsables de solamente 10% de la variación genética total. Estos resultados están en conflicto con nociones populares de razas humanas claramente distintas y relativamente homogéneas, y nos hacen cuestionar la utilidad de clasificaciones étnicas en diagnósticos médicos, en el campo forense y en genética farmacológica. Nuevos datos obtenidos de inserciones polimórficas de Alu y del cromosoma Y confirman los resultados previos, aunque indican una diversidad mayor en algunos (pero no todos los loci del cromosoma Y. Estos datos nos permiten investigar dos preguntas: (1 si las diferencias continentales, aunque pequeñas, son suficientemente grandes como para asignar a individuos a sus continentes basados en sus genotipos; (2 si los genotipos observados se agrupan en grupos de población o continentales cuando el origen de la muestra se ignora. Usando varios métodos estadísticos, veremos que los errores de clasificación son por lo menos de un 30% para los polimorfismos autosomales bi-alélicos, y de un 27% para el cromosoma Y. Cuatro series de datos genéticos de todo el mundo sugieren la existencia de grupos de genotipos diferentes, pero que éstos cuatro grupos no coinciden el uno con el otro. Adicionalmente, estudios de bloques de ADN del genoma humano indican que la mayor parte de dichos bloques es compartida entre los continentes, con solamente un pequeño porcentaje siendo específico a ciertos continentes. Estos resultados no indican que haya una base clara para subdividir a los humanos en grupos biológicamente definidos. Este puede no ser un problema en áreas aplicadas de genéticas, dado que los métodos rápidos para obtener genotipos individuales

  5. Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

    International Nuclear Information System (INIS)

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi

    2012-01-01

    β-FeSi 2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi 2 (220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi 2 (431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi 2 . Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi 2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi 2 /Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi 2 (431)/Si(001) is larger than that on the surface of β-FeSi 2 (220)/Si(111).

  6. La relación entre la capacidad de atencion dividida y la estimación prospectiva del tiempo

    OpenAIRE

    Susana Celeste Azzollini; Federico Faustino González; María Emilia Gómez

    2004-01-01

    Se realizó una investigación cuyo objetivo fue determinar si la capacidad de atención dividida resultaba explicativa de la variabilidad de las estimaciones prospectivas del tiempo. Los modelos teóricos sobre dicha estimación postulan que los recursos atencionales de procesamiento están divididos entre un procesador temporal, que cuenta y almacena unidades temporales subjetivas (Subjective Temporal Units - STUs) y otras actividades de procesamiento no temporal (Zakay, 1993...

  7. SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

    Science.gov (United States)

    Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

    2017-05-01

    A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

  8. Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

    1994-01-01

    High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

  9. Properties of SiMn slag as apozzolanic material in portland cement manufacture

    Directory of Open Access Journals (Sweden)

    Frías, M.

    2005-12-01

    Full Text Available The primary purpose of this study was to evaluate the behaviour of SiMn slag as a pozzolanic material in commercial Portland cement manufacture. This necessitated exploring different scientific and technical aspects to ensure a correct valuation. The results obtained revealed that silica and calcium are the main components of SiMn slag, whose pozzolanic activity occupies an intermediate position between silica fume and fly ash; it reduces heat of hydration and mortars made with cement containing SiMn slag exhibit compressive strength values similar to the figures for standard mortar. Consequently, the use of SiMn slag as an active addition to cement is feasible, inasmuch as the resulting product meets the requirements laid down in the present legislation.

    El objetivo principal de este trabajo es evaluar el comportamiento de la escoria de SiMn como material puzolánico en la fabricación de cementos Portland comerciales. Para ello, resulta necesario investigar diferentes aspectos científicos y técnicos que conlleven a una correcta valorización de las mismas. Los resultados obtenidos en el presente trabajo han puesto de manifiesto que la escoria de SiMn presenta una naturaleza sílico-cálcica, actividad puzolúnica intermedia entre el humo de sílice y ceniza volante, reduce el calor de hidratación y los morteros con escoria de SiMn muestra alcanzan resistencias a compresión similares a las del mortero patrón. Por lo tanto, la utilización de la escoria de SiMn como adición activa al cemento es viable, cumpliendo con las exigencias recogidas en la norma vigente.

  10. Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

    Directory of Open Access Journals (Sweden)

    Dan Zhu

    2014-03-01

    Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

  11. La chronologie du royaume de Qatabân du Ier siècle avant J.-C. au Ier siècle après J.-C.

    Directory of Open Access Journals (Sweden)

    Mounir Arbach

    2002-04-01

    Full Text Available Les nouvelles découvertes archéologiques et épigraphiques de ces dernières années, effectuées au cours des fouilles franco-italiennes à Tamna`, l'ancienne capitale du royaume de Qatabân, permettent d'établir une nouvelle chronologie des souverains de Qatabân entre le Ier siècle avant J.-C. et le Ier siècle après J.- C.The chronology of the kingdom of Qatabân, from the 1st century BC to the 1st century AD. Archaeological and epigraphical discoveries made in recent years by the Franco-Italian excavations at Tamna`, the ancient capital of the kingdom of Qatabân, allows us to establish a new chronology for the kings of Qatabân during the 1st century BC and the 1st century AD.

  12. Oscillations in the fusion of the Si + Si systems; Oscilaciones en la fusion de sistemas de Si + Si

    Energy Technology Data Exchange (ETDEWEB)

    Aguilera R, E F; Kolata, J J; DeYoung, P A; Vega, J J [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)

    1986-02-15

    Excitation functions for the yields of all the residual nuclei from the {sup 28} Si + {sup 28,30} and {sup 30} Si + {sup 30} Si reactions have been measured via the {gamma}-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the {sup 28} + {sup 28} Si reaction, we have found evidence for intermediate width structure in the 2{alpha} and the {alpha}pn channels in {sup 28} Si + {sup 30} Si and for broad structure in the total fusion cross sections for {sup 30} Si + {sup 30} Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  13. Estrategias de solución para análisis de consolidación acoplados en medios porosos

    OpenAIRE

    Schrefler, Bernardo A.; Saetta, A.; Vitaliani, R.

    1991-01-01

    Se revisan brevemente las estrategias empleadas usualmente para resolver las ecuaciones acopladas del problema de la consolidación de suelos saturados. Luego se introduce un nuevo esquema basado en la solucion particionada del conjunto de ecuaciones acopladas y se desarrollan los criterios de convergencia y estabilidad necesarios. Peer Reviewed

  14. Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

    2011-03-15

    We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Divergência entre genótipos de soja, cultivados em várzea irrigada

    Directory of Open Access Journals (Sweden)

    Elonha Rodrigues dos Santos

    2011-12-01

    Full Text Available A divergência genética é um dos mais importantes parâmetros avaliados por melhoristas de plantas, na fase inicial de um programa de melhoramento genético. Diante disso, objetivou-se com este trabalho avaliar, por meio de técnicas multivariadas, a divergência genética entre 48 genótipos de soja, cultivados em várzea irrigada no Estado do Tocantins, com o intuito de identificar as combinações mais promissoras para produzir recombinações superiores, tanto destinados a produção de óleo e farelo, como do grupo especial, destinados ao consumo humano. O experimento foi conduzido no município de Formoso do Araguaia, TO, em cultivo de várzea irrigada na entressafra de 2010. O delineamento experimental foi o de blocos ao acaso, com quatro repetições. Verificou-se variabilidade entre os genótipos testados. Os resultados dos métodos de agrupamento de Tocher, UPGMA e Variáveis Canônicas foram concordantes entre si e detectaram quatro grupos distintos. As seguintes hibridações são promissoras para produção de grãos de soja destinados a óleo e farelo: M-Soy 8766, M-Soy 9144, A 7002 e M-Soy 9056 com Amaralina e cruzamentos entre M-Soy 8766, M-Soy 9144 e Amaralina com BRSMG 790A, BRS 257, BRS 216 e BRS 213 e são indicados visando a genótipos de soja especiais para alimentação humana.

  16. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  17. Sentidos sobre a Amizade Entre Travestis: Construção de Repertórios Interpretativos

    Directory of Open Access Journals (Sweden)

    Rita Matins Godoy Rocha

    Full Text Available RESUMOConsiderando a necessidade de outros olhares sobre a complexidade do universo das travestis, este estudo objetiva descrever e analisar os repertórios interpretativos sobre as relações de amizade entre elas. Participaram 10 travestis do sudeste brasileiro. A entrevista individual semiestruturada foi o recurso metodológico escolhido, apoiada pelo caderno de campo. O estudo se baseou nas propostas de análise do discurso construcionista social. Cinco repertórios interpretativos sobre amizade foram identificados: Babado; Batalha; Família; Segredo e Uó. O uso dos repertórios, em diferentes arranjos, apresenta a maneira como as travestis contam sobre si, seja ressaltando seus potenciais, seja legitimando sentidos de marginalidade e estigma. Esses sentidos criam a possibilidade de existência entre elas e podem subsidiar a construção e implementação de intervenções e políticas direcionadas a essa população.

  18. Nivel de compromiso deportivo en tenistas y futbolistas entre 10 y 14 años

    Directory of Open Access Journals (Sweden)

    Paula Ortiz Marholz

    2011-12-01

    Full Text Available En el presente estudio se pretende determinar el nivel de compromiso deportivo en un grupo de tenistas y futbolistas, de manera de conocer si esta información puede ayudar a monitorear y controlar el entrenamiento deportivo, desde la perspectiva de la motivación de logro. La muestra está formada por 174 varones con edades comprendidas entre los 10 y 14 años, provenientes de las disciplinas deportivas de tenis (n=31 y fútbol (n=143. Los resultados mostraron un alto nivel de compromiso de los sujetos hacia su práctica deportiva, lo que se fundamenta en la relación existente entre los valores obtenidos por los distintos factores evaluados. Se concluye que estos deportistas exiben una disposición psicológica positiva que se refleja en el deseo y decisión de seguir participando en su respectiva disciplina deportiva, lo que se presenta como factor protector frente al abandono deportivo.

  19. O DESENVOLVIMENTO LOCAL INTEGRADO ENTRE AS CIDADES DE MACAPÁ E SANTANA (ESTADO DO AMAPÁ, BRASIL

    Directory of Open Access Journals (Sweden)

    José Alberto Tostes

    2016-06-01

    Full Text Available O presente artigo discute as relações estabelecidas entre as cidades de Macapá e Santana no estado do Amapá. Macapá e Santana juntas atuam como região indutora do desenvolvimento do Estado e influenciam as dinâmicas econômicas de um conjunto de ilhas do Pará e do interior do Amapá. Compõem as duas principais portas de entrada das atividades econômicas do Estado, o Aeroporto, localizado em Macapá, e o Porto, localizado em Santana. Também recebem influência e são estruturas indutoras e se conectam com a terceira porta de acesso ao Estado, à região de Fronteira do Oiapoque. As duas cidades articulam-se entre si por via rodoviária (Rodovia JK e Duca Serra e por via fluvial. Sendo Macapá considerada a porta aérea do Amapá, articula-se em uma relação multiescalar (regional, nacional e global.

  20. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  1. Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

    International Nuclear Information System (INIS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2015-01-01

    We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

  2. U-Mo/Al-Si interaction: Influence of Si concentration

    International Nuclear Information System (INIS)

    Allenou, J.; Palancher, H.; Iltis, X.; Cornen, M.; Tougait, O.; Tucoulou, R.; Welcomme, E.; Martin, Ph.; Valot, C.; Charollais, F.; Anselmet, M.C.; Lemoine, P.

    2010-01-01

    Within the framework of the development of low enriched nuclear fuels for research reactors, U-Mo/Al is the most promising option that has however to be optimised. Indeed at the U-Mo/Al interfaces between U-Mo particles and the Al matrix, an interaction layer grows under irradiation inducing an unacceptable fuel swelling. Adding silicon in limited content into the Al matrix has clearly improved the in-pile fuel behaviour. This breakthrough is attributed to an U-Mo/Al-Si protective layer around U-Mo particles appeared during fuel manufacturing. In this work, the evolution of the microstructure and composition of this protective layer with increasing Si concentrations in the Al matrix has been investigated. Conclusions are based on the characterization at the micrometer scale (X-ray diffraction and energy dispersive spectroscopy) of U-Mo7/Al-Si diffusion couples obtained by thermal annealing at 450 deg. C. Two types of interaction layers have been evidenced depending on the Si content in the Al-Si alloy: the threshold value is found at about 5 wt.% but obviously evolves with temperature. It has been shown that for Si concentrations ranging from 2 to 10 wt.%, the U-Mo7/Al-Si interaction is bi-layered and the Si-rich part is located close to the Al-Si for low Si concentrations (below 5 wt.%) and close to the U-Mo for higher Si concentrations. For Si weight fraction in the Al alloy lower than 5 wt.%, the Si-rich sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 , when the other sub-layer (close to U-Mo) is silicon free and made of UAl 3 and U 6 Mo 4 Al 43 . For Si weight concentrations above 5 wt.%, the Si-rich part becomes U 3 (Si, Al) 5 + U(Al, Si) 3 (close to U-Mo) and the other sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 . On the basis of these results and of a literature survey, a scheme is proposed to explain the formation of different types of ILs between U-Mo and Al-Si alloys (i.e. different protective layers).

  3. Porous SiC/SiC composites development for industrial application

    International Nuclear Information System (INIS)

    Maeta, S.; Hinoki, T.

    2014-01-01

    Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

  4. Entre el silencio y la impunidad: violencia sexual en escenarios de conflicto

    Directory of Open Access Journals (Sweden)

    Marta Torres Falcón

    2015-01-01

    Full Text Available El artículo analiza la violencia sexual contra las mujeres en escenarios de conflicto armado en América Latina. Los temas principales son el vínculo entre violencia social y violencia de género, el concepto de violencia sexual en la teoría y práctica de los derechos humanos y su alta incidencia en situaciones de conflicto. En distintos espacios sociales, la violencia contra las mujeres es invisible (o invisibilizada, aun si es extrema. La definición de la violencia sexual como crimen de lesa humanidad es muy reciente y sigue siendo controvertida. Sin embargo, se han dado ya pasos importantes en este proceso.

  5. Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

    2005-08-01

    SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  6. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  7. Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

    Directory of Open Access Journals (Sweden)

    Jiongjiong Mo

    2017-01-01

    Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

  8. Relação entre solos afetados por sais e concentração de metais pesados em quatro perímetros irrigados no Ceará

    Directory of Open Access Journals (Sweden)

    Cleyton S. M. Cunha

    Full Text Available RESUMO O trabalho teve como objetivo verificar a relação entre atributos químicos relacionados com a salinidade (CTC, pH, PST e CE e concentrações de metais pesados (Fe, Al, Si, Ti, Mn, Zn, Cr, V, Ni, Cu, Co, B, Pb, Se, Cd, Mo, Zr e suas inter-relações em solos afetados por sais relativo a quatro perímetros irrigados no Ceará. Foram coletadas amostras de solo, de diferentes texturas, nas profundidades de 0–10 e 10-20 cm em 10 pontos dentro de cada perímetro, totalizando oitenta (80 amostras. Foram utilizadas a análise de correlação canônica (ACC e a análise fatorial com extração dos fatores em componentes principais (AF para verificar as possíveis relações entre os dois conjuntos de variáveis. Os atributos do solo relacionadas com a salinidade contribuíram para explicar as concentrações de metais pesados nos solos dos quatro perímetros irrigados, quando analisados em conjunto; todavia, não foram capazes de explicar quando analisados de forma individual; seguindo a ordem de importância: CTC > pH > PST > CE. Foram verificadas correlações entre os elementos metálicos analisados neste estudo (B, Mo, Si, Zr, Cr, Ni, Pb, Ti, Zn, Cd, Co, Se e Cu com o Fe, Mn, Al, Ti e V, ou, ainda, afinidades geoquímicas entre os elementos.

  9. Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

    Science.gov (United States)

    Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

    2013-09-01

    We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

  10. Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

    Science.gov (United States)

    Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

    2012-11-01

    We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

  11. La Mauritanie jusqu’au xxe siècle

    OpenAIRE

    Vanacker, Christiane

    2013-01-01

    De par sa situation, par les populations qu’elle rassemble, la République Islamique de Mauritanie apparaît en quelque sorte comme un trait d’union entre le monde maghrébin et le monde Noir. Cette vocation s’est précisée aux ixe-xie siècles mais c’est en fait toute l’histoire du pays qui est liée à celle de l’Afrique Méditerranéenne et de l’Afrique Occidentale. L’étude de l’évolution de la Mauritanie nous amène constamment à franchir le cadre strict des frontières qui sont les siennes à l’heur...

  12. Quantitative détermination of aluminium and silicon in SiO2 and Al2O3 by X ray fluorescence

    Directory of Open Access Journals (Sweden)

    Sagrera, José Luis

    1966-09-01

    Full Text Available Not availableEn el presente trabajo, se describe la influencia de estos dos elementos entre si cuando se determinan sus contenidos en muestras binarias de Si02 y Al203. por fluorescencia de rayos X. En este mismo artículo se explica la corrección de estas influencias utilizando una fusión con tetraborato sódico, así como el procedimiento práctico para realizarla. Se detalla el procedimiento mediante fotografías tomadas en los momentos más interesantes del proceso de fusión.

  13. Interfacial characterization of CVI-SiC/SiC composites

    International Nuclear Information System (INIS)

    Yang, W.; Kohyama, A.; Noda, T.; Katoh, Y.; Hinoki, T.; Araki, H.; Yu, J.

    2002-01-01

    The mechanical properties of the interfaces of two families of chemical vapor infiltration SiC/SiC composites, advanced Tyranno-SA and Hi-Nicalon fibers reinforced SiC/SiC composites with various carbon and SiC/C interlayers, were investigated by single fiber push-out/push-back tests. Interfacial debonding and fibers sliding mainly occurred adjacent to the first carbon layer on the fibers. The interfacial debonding strengths and frictional stresses for both Tyranno-SA/SiC and Hi-Nicalon/SiC composites were correlated with the first carbon layer thickness. Tyranno-SA/SiC composites exhibited much larger interfacial frictional stresses compared to Hi-Nicalon/SiC composites. This was assumed to be mainly contributed by the rather rough surface of the Tyranno-SA fiber

  14. Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

    Directory of Open Access Journals (Sweden)

    Song Feng

    2018-01-01

    Full Text Available The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

  15. Low dose irradiation performance of SiC interphase SiC/SiC composites

    International Nuclear Information System (INIS)

    Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

    1998-01-01

    Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

  16. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  17. Relación entre el período de lactancia materna y maloclusiones

    Directory of Open Access Journals (Sweden)

    Rosa Gabriela Rondón

    2012-02-01

    Full Text Available Los beneficios de la lactancia materna en la prevención de las maloclusiones han sido descritos en la literatura odontológica, destacando que lactar exclusivamente más de 6 meses disminuye su prevalencia. Objetivo: determinar la relación entre periodo de Lactancia Materna y Maloclusiones. Material y métodos: se examinó una muestra de 59 niños en edades entre 6 y 13 años en la parroquia Higuerote, Miranda, Venezuela. Se aplicó un cuestionario a cada representante para obtener datos sobre el periodo de lactancia materna recibida por el niño y se efectuó un examen clínico bucal observando variables ortodóncicas en cada niño. Se realizó un modelo de análisis de significancia p<0,05, mediante la prueba de Fisher a través del Análisis de Varianza Univariado (ANOVA, para evidenciar si existían diferencias estadísticamente significativas entre periodo de lactancia materna y las variables: relación molar permanente, mordida abierta anterior y mordida cruzada posterior. También se aplicó la prueba no paramétrica de Kruskal-Wallis en aquellos casos en donde la muestra fue menor de 30 observaciones. Resultados: existe relación estadística significativa entre un periodo de lactancia materna menor de 6 meses y relación molar en clase II de Angle y mordida abierta anterior, sin embargo para mordida cruzada posterior no se halló significancia estadística. Se encontró relación estadísticamente significativa entre un periodo de lactancia materna mayor de 6 meses con relación molar en clase I de Angle. Conclusión: se plantea que un periodo de lactancia materna mayor de 6 meses se relaciona con la ausencia de maloclusión en el grupo estudiado.

  18. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  19. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  20. Correlação entre permeabilidade e resistência mecânica de filtros cerâmicos no sistema Al2O3-SiC Relationship between permeability and mechanical strength of Al2O3-SiC ceramic filters

    Directory of Open Access Journals (Sweden)

    V. R. Salvini

    2000-06-01

    Full Text Available Tem sido crescente o uso de cerâmicas reticulares em processos de refino e purificação de metais fundidos, filtração de gases quentes e combustão catalítica. A aplicação depende da composição química e das propriedades físicas do material (número de poros por polegada linear (ppi, porosidade e diâmetro de poro. Há um consenso de que a melhoria das propriedades dos filamentos resulta em um melhor desempenho mecânico do filtro cerâmico. Entretanto, a análise dos valores de resistência mecânica não pode ser considerada isoladamente, uma vez que para filtros cerâmicos esta tem que estar associada à permeabilidade. Neste trabalho é feita uma análise entre as propriedades fluidodinâmicas e mecânicas de filtros cerâmicos no sistema Al2O3-SiC na faixa de 8 a 90 ppi. Os resultados obtidos permitem considerações tanto no aspecto do processamento cerâmico quanto no modelamento mecânico apresentado na literatura.Reticulate ceramics have been increasingly employed in purification of gases, liquid metals and in catalytic processes. The application area usually depends on the chemical composition and the physical properties (porosity, pore size and pore counting (ppi. In most cases, reticulate ceramics are submitted to compression loads at high temperatures, which makes the durability of these cellular materials be ultimately related to the mechanical quality of the struts. In filtration applications, it is also important the evaluation of fluid dynamic properties of the ceramic, specifically its permeability to fluid flow. In this work, a relationship between mechanical properties and permeability constants of Al2O3-SiC ceramic foam filters with 8 to 90 ppi is presented. Results were associated with the processing technique and with the mechanical modeling presented in the literature.

  1. Youth violence in Latin America: current situation and violence prevention strategies La violencia entre la juventud en América Latina: situación actual y estrategias para su prevención

    Directory of Open Access Journals (Sweden)

    Katherine Weaver

    1999-04-01

    Full Text Available La violencia, que ha adquirido proporciones endémicas, se ha convertido en uno de los problemas de salud pública más graves que aquejan a la Región de las Américas. La situación es más alarmante aun entre los adolescentes y la juventud, es decir, entre las personas de 10 a 24 años de edad. En este artículo se examinan la situación actual de la violencia y las lecciones aprendidas a partir de las estrategias aplicadas actualmente para prevenir la violencia entre la juventud. El artículo, donde se aplica un enfoque de salud pública para la prevención de la violencia, hace hincapié en la necesidad de aplicar diversas estrategias en poblaciones enteras a fin de explorar de forma simultánea numerosas causas. Según los resultados de una revisión bibliográfica de Alfred McAlister, la violencia contra la gente joven puede prevenirse si se limita el acceso a armas de fuego, si se mejoran la calidad de la vida y las oportunidades de empleo y educación, y si se fomentan mejores relaciones entre los distintos grupos étnicos. Las consecuencias de las conductas violentas pueden modificarse más eficazmente mediante cambios en el sistema de imposición de la ley y en el sistema judicial que mediante la habitual estrategia de encarcelar al joven. Las comunicaciones en la escuela y la comunidad, así como la educación de los padres de familia, pueden cambiar la actitud de las personas jóvenes y mejorar su capacidad para prevenir la violencia.

  2. Irradiation effect on Nite-SiC/SiC composites

    International Nuclear Information System (INIS)

    Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

    2007-01-01

    Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

  3. Diferencias entre la sensibilidad paterna según variables sociodemográficas

    Directory of Open Access Journals (Sweden)

    Lilliana Nieri

    2017-06-01

    Full Text Available Durante décadas, diversas investigaciones sostuvieron que la función del padre era la de proveedor económico. No obstante, con los cambios históricos que fueron sucediendo en las últimas décadas, muchos psicólogos se interesaron en conocer cuáles eran las funciones del padre y qué le ocurría durante la gestación de su hijo. Igualmente, se ha comprobado que las características socioculturales y sociodemográficas del padre influyen en el ejercicio y la transición hacia la paternidad. Por ello, esta investigación se centró en analizar si existen diferencias entre los sentimientos, las emociones y las reacciones de los padres durante la gestación y el nacimiento de su hijo con las variables sociodemográficas: edad paterna, niveles de estudio, estado civil, situación laboral, cantidad de hijos, edad de su hijo y sexo de su hijo. La muestra de este estudio estuvo compuesta por 170 padres con hijos menores de dos años de edad. El diseño de estudio fue no experimental, de tipo descriptivo. Los instrumentos que se utilizaron fueron: cuestionario de sensibilidad paterna y una encuesta sociodemográfica diseñada para dicha investigación. Los resultados demuestran que existen diferencias entre la sensibilidad del padre con respecto a la edad del padre, la edad del hijo y el nivel de estudios paternos, y no se encontraron diferencias entre esta y el estado civil, situación laboral, cantidad de hijos y sexo de los hijos. A modo de conclusión, la construcción y el desarrollo de la paternidad dependen de diversas variables tales como el contexto social y cultural, su situación actual, entre otros y la conjunción de todas determinan la manera en que el padre se vincule con su hijo.

  4. Stability analysis of SiO2/SiC multilayer coatings

    International Nuclear Information System (INIS)

    Fu Zhiqiang; Jean-Charles, R.

    2006-01-01

    The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

  5. Si-O-Si bond-angle distribution in vitreous silica from first-principles 29Si NMR analysis

    International Nuclear Information System (INIS)

    Mauri, Francesco; Pasquarello, Alfredo; Pfrommer, Bernd G.; Yoon, Young-Gui; Louie, Steven G.

    2000-01-01

    The correlation between 29 Si chemical shifts and Si-O-Si bond angles in SiO 2 is determined within density-functional theory for the full range of angles present in vitreous silica. This relation closely reproduces measured shifts of crystalline polymorphs. The knowledge of the correlation allows us to reliably extract from the experimental NMR spectrum the mean (151 degree sign ) and the standard deviation (11 degree sign ) of the Si-O-Si angular distribution of vitreous silica. In particular, we show that the Mozzi-Warren Si-O-Si angular distribution is not consistent with the NMR data. This analysis illustrates the potential of our approach for structural determinations of silicate glasses. (c) 2000 The American Physical Society

  6. El lugar urbano deconstruido en correspondencias y congruencias entre mente–territorio–sociedad

    Directory of Open Access Journals (Sweden)

    Dr. Arq. Marcelo Zárate

    2012-11-01

    Full Text Available Desde el objetivo de desarrollar estrategias de conocimiento proyectual alternativas, de carácter sociofísico, dentro de un urbanismo focalizado sobre el ambiente del hombre, a partir de la premisa que considera a la ciudad como una compleja articulación de lugares (en sentido antropológico, se investiga una articulación estratégica entre las siguientes dimensiones esenciales del lugar con relación a los grupos sociales: las prácticas sociales; las significaciones de esas prácticas; los rasgos configurativos del escenario y la significación con que éstos y las prácticas sociales están cargados. La hipótesis fundamental establece que: según sea la configuración del esquema sociofísico-simbólico de articulación de estos elementos, o esquema genético del lugar, surgirán las claves para comprender si en un determinado lugar urbano están dadas o no las condiciones esenciales para desarrollar procesos participativos de planificación urbana ambiental. Con esta hipótesis, el trabajo fundamenta una respuesta posible sustentada en la articulación estratégica entre: congruencias sociofísicas (hacen referencia al nivel de adecuación de un determinado escenario para el despliegue sustentable de ciertas prácticas sociales, y correspondencias sociosimbólicas (hacen referencia a la coherencia entre las significaciones proyectadas desde distintos grupos humanos a partir de sus actividades asociadas a un escenario particular.

  7. Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

    International Nuclear Information System (INIS)

    Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

    2007-01-01

    Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

  8. Chimie et mécanisme dans la nouvelle Académie royale des sciences : les débats entre Louis Lémery et Etienne-François Geoffroy

    Directory of Open Access Journals (Sweden)

    Bernard Joly

    2008-03-01

    Full Text Available Au début du XVIIIe siècle, une querelle éclate entre deux chimistes français à propos de la fabrication artificielle du fer. C’est en fait un conflit entre une interprétation mécaniste des processus chimiques et une approche plus traditionnelle, soupçonnée d’emprunter ses thèses à l’alchimie, mais qui sera pourtant à l’origine de la table des affinités qui sera adoptée par tous les chimistes jusqu’au début du XIXe siècle.In the early eighteenth century a quarrel came out between two French chemists concerning artificial making of iron. It was in fact a conflict between a mechanist interpretation of chemical process and a more traditional approach, which was suspected of having taken his thesis from alchemy. But nevertheless, this approach will lead to affinity table which was accepted by all the chemists until the early nineteenth century.

  9. Luminescence properties of Si-capped β-FeSi{sub 2} nanodots epitaxially grown on Si(001) and (111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amari, Shogo; Ichikawa, Masakazu [Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakamura, Yoshiaki, E-mail: nakamura@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)

    2014-02-28

    We studied the luminescence properties of Si-capped β-FeSi{sub 2} nanodots (NDs) epitaxially grown on Si substrates by using photoluminescence (PL) and electroluminescence (EL) spectroscopies. Codepositing Fe and Si on ultrathin SiO{sub 2} films induced the self-assembly of epitaxial β-FeSi{sub 2} NDs. The PL spectra of the Si/β-FeSi{sub 2} NDs/Si structure depended on the crystal orientation of the Si substrate. These structures exhibited a broad PL peak near 0.8 eV on both Si(001) and (111) substrates. The PL intensity depended on the shape of the β-FeSi{sub 2} NDs. For the flat NDs, which exhibited higher PL intensity, we also recorded EL spectra. We explained the luminescence properties of these structures by the presence of nanostructured Si offering radiative electronic states in the Si cap layers, generated by nano-stressors for upper Si layer: the strain-relaxed β-FeSi{sub 2} NDs.

  10. Competencias adquiridas en la carrera de Medicina: Comparación entre egresados de dos universidades, una pública y otra privada

    Directory of Open Access Journals (Sweden)

    Amanda Galli

    Full Text Available Se entiende por competencia, la capacidad de hacer alguna cosa o la capacidad de cumplir una tarea. El propósito de este trabajo es conocer qué competencias profesionales han logrado los egresados; comprobar si existen diferencias entre dos grupos de egresados y establecer si existe alguna relación entre la cantidad de competencias que dicen haber logrado y la valoración global que hacen de la formación universitaria recibida. Se diseñó un cuestionario con 34 conductas profesionales (marcar sí cuando se siente capaz de realizarla en forma autónoma y una pregunta para valorar globalmente la formación recibida. El cuestionario se aplicó a dos grupos: egresados de una universidad pública (G1 y de una privada (G2. Los resultados se expresaron como porcentajes y medias de respuestas sí. Las 34 actividades se presentan agrupadas en 7 categorías. Se analizaron las diferencias entre ambos grupos. Respondieron 181 médicos, el promedio de respuestas positivas es de 28,18; diferencia significativa a favor del G1. El 100% de los egresados se sienten capaces de hacer una buena anamnesis y un examen físico completo. Los porcentajes más bajos de respuesta afirmativas se concentran en las conductas vinculadas a decisiones terapéuticas, a intervenciones en salud comunitaria y a habilidades para el autoaprendizaje. Sólo en 8 de las 34 conductas profesionales se hallaron diferencias significativas a favor de G1. El 53% de los egresados evalúa como Buena la formación recibida, no hay diferencia significativa entre ambos grupos. Se observa una correspondencia entre cantidad de respuestas sí y valoración de la formación recibida : a mejor valoración mayor número de respuestas positivas. Los resultados son similares en ambos grupos; los hallazgos están en consonancia con los de otros estudios publicados. Este tipo de cuestionario de autoevaluación puede ser uno de los instrumentos a utilizar en la evaluación de resultados de un programa de

  11. Thermal shock properties of 2D-SiCf/SiC composites

    International Nuclear Information System (INIS)

    Lee, Sang Pill; Lee, Jin Kyung; Son, In Soo; Bae, Dong Su; Kohyama, Akira

    2012-01-01

    This paper dealt with the thermal shock properties of SiC f /SiC composites reinforced with two dimensional SiC fabrics. SiC f /SiC composites were fabricated by a liquid phase sintering process, using a commercial nano-size SiC powder and oxide additive materials. An Al 2 O 3 –Y 2 O 3 –SiO 2 powder mixture was used as a sintering additive for the consolidation of SiC matrix region. In this composite system, Tyranno SA SiC fabrics were also utilized as a reinforcing material. The thermal shock test for SiC f /SiC composites was carried out at the elevated temperature. Both mechanical strength and microstructure of SiC f /SiC composites were investigated by means of optical microscopy, SEM and three point bending test. SiC f /SiC composites represented a dense morphology with a porosity of about 8.2% and a flexural strength of about 160 MPs. The characterization of SiC f /SiC composites was greatly affected by the history of cyclic thermal shock. Especially, SiC f /SiC composites represented a reduction of flexural strength at the thermal shock temperature difference higher than 800 °C.

  12. SiC/SiC Cladding Materials Properties Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Snead, Mary A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    When a new class of material is considered for a nuclear core structure, the in-pile performance is usually assessed based on multi-physics modeling in coordination with experiments. This report aims to provide data for the mechanical and physical properties and environmental resistance of silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites for use in modeling for their application as accidenttolerant fuel cladding for light water reactors (LWRs). The properties are specific for tube geometry, although many properties can be predicted from planar specimen data. This report presents various properties, including mechanical properties, thermal properties, chemical stability under normal and offnormal operation conditions, hermeticity, and irradiation resistance. Table S.1 summarizes those properties mainly for nuclear-grade SiC/SiC composites fabricated via chemical vapor infiltration (CVI). While most of the important properties are available, this work found that data for the in-pile hydrothermal corrosion resistance of SiC materials and for thermal properties of tube materials are lacking for evaluation of SiC-based cladding for LWR applications.

  13. Du caractère sociable de l’intime : le plaisir esthétique chez Kant, entre solitude et communication

    Directory of Open Access Journals (Sweden)

    Raphaël Ehrsam

    2016-11-01

    Full Text Available Dans une large mesure, du XVIIe au XVIIIe siècle, on assiste à une métamorphose théorique des rapports entre plaisir, solitude et sociabilité. Tandis qu’au XVIIe siècle (et encore chez plusieurs auteurs du XVIIIe, le plaisir est décrit comme une expérience dont le lieu principal est la sociabilité, à l’inverse de la méditation sise de préférence dans la solitude, le XVIIIe siècle réinscrit le plaisir dans l’intimité solitaire du moi et majore l’idée d’une nécessaire communauté des sujets connaissant. La caractérisation kantienne de l’expérience esthétique, comme expérience d’un plaisir qui enveloppe immédiatement une prétention à l’universalité et à la communication, apparaît dès lors comme une façon de rompre la logique de ce chiasme.

  14. Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

    Science.gov (United States)

    Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

    2018-01-01

    The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

  15. Relación entre work engagement y capital psicológico en una muestra de profesorado universitario

    OpenAIRE

    Freire Moure, Martina

    2016-01-01

    Traballo Fin de Grao en Psicoloxía. Curso 2015-2016 [ES] El work engagement y el capital psicológico son dos conceptos que han ganado gran popularidad en los últimos años. Sin embargo, son escasos los estudios que se han llevado a cabo para determinar si existe relación entre ambos, especialmente en profesorado universitario. En este estudio, se tiene en cuenta la conceptualización de work engagement desarrollada por Schaufeli, Salanova, González-Romá y Bakker (2002), así como la conceptua...

  16. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-01

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  17. Espumas vítreas do sistema Li2O-ZrO2-SiO2-Al2O 3 produzidas pelo processo gelcasting Li2O-ZrO2-SiO2 -Al2O3 glass-ceramic foams produced by the gelcasting process

    OpenAIRE

    E. de Sousa; C. R. Rambo; F. S. Ortega; A. P. N. de Oliveira; V. C. Pandolfelli

    2009-01-01

    Espumas vítreas do sistema Li2O-ZrO2-SiO2-Al2O 3 (LZSA) foram produzidas pelo processo gelcasting, associado à aeração de suspensões cerâmicas, sem controle atmosférico. Por meio da adição de diferentes concentrações de agente espumante (Fongraminox) foi possível obter espumas vítreas com densidade relativa variando entre uma estreita faixa (0,10-0,15). As espumas vítreas apresentaram resistência à compressão de 2,5-3,7 MPa, que correspondem a porosidade entre 85 e 89% e macroestrutra com por...

  18. Electrical properties of Si/Si1-xGex/Si inverted modulation doped structures

    International Nuclear Information System (INIS)

    Sadeghzadeh, M.A.

    1998-12-01

    This thesis is a report of experimental investigations of growth strategy and electrical properties of Si/Si 1-x Ge x /Si inverted Modulation Doped (MD) structures grown by solid source Molecular Beam Epitaxy (MBE). If the grown Si layer is B-doped at some distance (as spacer) before or after the alloy layer, this remote doping induces the formation of a quasi Two Dimensional Hole Gas (2-DHG) near to the inverted (SiGe on Si) or normal (Si on SiGe) heterointerfaces of the Si/Si 1-x Ge x /Si quantum well, respectively. The latter arrangement is the well known 'normal' MD structure but the former one is the so-called 'inverted' MD structure which is of great interest for Field Effect Transistor (FET) applications. A reproducible growth strategy was employed by the use of a thick (400nm) Si cap for inverted MD structures with Ge composition in the range of 16-23%. Boron segregation and cap surface charges are significant in these inverted structures with small ( 20nm) spacer layers, respectively. It was demonstrated by secondary ion mass spectroscopy (SIMS) that boron segregation, which causes a reduction in the effective spacer dimension, can be suppressed by growth interruption after boron doping. The enhancement in hole sheet density with increasing Si cap layer thickness, is attributed to a reduction in the influence of positive surface charges in these structures. Top-gated devices were fabricated using these structures and the hole sheet density could be varied by applying a voltage to the metal-semiconductor gate, and the maximum Hall mobility of 5550 cm 2 V -1 s -1 with 4.2x10 11 cm -2 was measured (at 1.6K) in these structures. Comparison of measured Hall mobility (at 4.2K) as a function of hole sheet density in normal and inverted MD structures implies that both 2-DHG confined at normal and/or inverted structures are subjected to very similar interface charge, roughness, and alloy scattering potentials. Low temperatures magnetotransport measurements (down to

  19. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Energy Technology Data Exchange (ETDEWEB)

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  20. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    International Nuclear Information System (INIS)

    Ping Wang, Y.; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O.; Stodolna, J.; Ponchet, A.; Bahri, M.; Largeau, L.; Patriarche, G.; Magen, C.

    2015-01-01

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth

  1. Evidencia morfológica de hibridación entre las subespecies de Ramphocelus flammigerus (Passeriformes: Thraupidae en Colombia

    Directory of Open Access Journals (Sweden)

    M. Juliana Bedoya

    2012-03-01

    Full Text Available Las modificaciones de los hábitats naturales, tales como la deforestación y el incremento de las actividades agrícolas, han conducido a interacciones faunísticas inusuales. En Colombia, esta situación ha generado el contacto secundario entre las poblaciones de las subespecies de Ramphocelus flammigerus del Valle del Cauca y de la costa Pacífica; y se han encontrado individuos con rabadillas de colores intermedios entre las subespecies que se han catalogado como híbridos. El objetivo del presente estudio fue evaluar si existe evidencia morfológica que sugiera hibridación y que pueda explicar el origen de los individuos de coloración intermedia. Con este fin, se obtuvieron muestras de 15 localidades; 10 zonas alopátricas (cinco por cada subespecie y cinco zonas simpátricas. Para la captura de individuos se utilizaron redes de niebla y fueron tomados siete caracteres morfológicos. Asimismo, se predijo que si las subespecies están hibridando, las mismas, podrían ser morfológicamente más similares cuando coexisten que cuando se encuentran separadas. Alternativamente, cuando las subespecies coexisten, éstas pueden divergir en simpatría debido a presiones selectivas para reducir la competencia por recursos (desplazamiento de caracteres. Para identificar los patrones de variación morfológica, se comparó la morfología de las subespecies, de poblaciones simpátricas y alopátricas de ambas subespecies y de los individuos de cloración intermedia. Consecuentemente, se realizó un análisis discriminante y se evaluaron las diferencias entre los grupos con la utilización de intervalos de confianza del 95% para las relaciones logarítmicas. Y se capturaron un total de 112 individuos (46 de coloraciones intermedias, 20 R. f. flammigerus y 46 R. f. icteronotus. Los análisis discriminantes mostraron que las subespecies se diferencian entre ellas y que los individuos de coloraciones intermedias se traslapan con estas. Las relaciones logar

  2. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

    2016-08-15

    Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  3. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-25

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  4. Encontro entre teleologia e deontologia: uma análise a partir da interpretação contemporânea de Paul Ricoeur

    Directory of Open Access Journals (Sweden)

    Élsio José Corá

    2010-01-01

    Full Text Available http://dx.doi.org/10.5007/1677-2954.2010v9n1p43 Este trabalho pretende analisar a relação entre teleologia e deontologia, sob o ponto de vista contemporâneo de Paul Ricoeur. Objetiva, ainda, fazer uma classificação dos conceitos utilizados nessa relação, que incluem a estima de si, respeito de si, vida boa, solicitude e alteridade, conceitos tratados, principalmente no sétimo e oitavo capítulo da obra O si-mesmo como um outro. O estudo revela que para interrelacionar as propostas da ética teleológica (aristotélica e a deontológica (kantiana é preciso retomar a estrutura conceitual desenvolvida por Ricoeur, ou seja a tese da primazia da ética sobre a moral, bem como no desenvolvimento dessa tese, a necessidade da ética passar pelo crivo da norma.

  5. Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

    International Nuclear Information System (INIS)

    Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

    2004-01-01

    Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

  6. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Science.gov (United States)

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  7. Experimental and thermodynamic assessments of substitutions in the AlFeSi, FeMnSi, FeSiZr and AlCaFeSi systems (65 wt % Si) - solidification simulation

    International Nuclear Information System (INIS)

    Gueneau, C.; Ansara, I.

    1994-01-01

    The substitutions of Al Si, Fe Mn and Fe Zr in some intermetallic compounds of the Al-Fe-Si, Fe-Mn-Si and Fe-Si-Zr systems are modelled in the Si-rich corner using a two sublattice model. The solidification paths of the studied alloys are determined at equilibrium. The ascalculated phase volume fractions of the alloys are compared to the experimental ones. Finally, a solidification simulation using the Gulliver-Scheil's model is performed in order to explain the formation of some precipitates experimentally observed. (authors). 14 figs., 19 refs

  8. La enseñanza de la salud pública en la formación de grado : Estudio comparativo entre las carreras de Medicina de la UNLP, la UNR y la UNC

    OpenAIRE

    Alconada Magliano, Juan P.

    2013-01-01

    Objetivo general Evaluar, a través de un estudio comparativo entre tres universidades públicas argentinas (La Plata, Córdoba y Rosario), si la propuesta de enseñanza de la salud pública en la formación de Grado, permite la formación de un médico acorde a las necesidades de la comunidad. Objetivos específicos Evaluar si la propuesta de enseñanza capacita al futuro médico para: - Identificar grupos de riesgo en una comunidad determinada. - Ide...

  9. Ultrathin SiO{sub 2} layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO{sub 2}/Si interface for crystalline Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Taketoshi; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • The density of interface states at the SiO{sub 2}/Si interface is decreased by NAOS. • The minority carrier lifetime is increased by the NAOS treatment. • Great interfacial properties of the NAOS layer are kept after thermal oxidation. - Abstract: A combination of the nitric acid oxidation of Si (NAOS) method and post-thermal oxidation is found to efficiently passivate the SiO{sub 2}/n-Si(100) interface. Thermal oxidation at 925 °C and annealing at 450 °C in pure hydrogen atmosphere increases the minority carrier lifetime by three orders of magnitude, and it is attributed to elimination of Si dangling bond interface states. Fabrication of an ultrathin, i.e., 1.1 nm, NAOS SiO{sub 2} layer before thermal oxidation and H{sub 2} annealing further increases the minority carrier lifetime by 30% from 8.6 to 11.1 ms, and decreased the interface state density by 10% from 6.9 × 10{sup 9} to 6.3 × 10{sup 9}eV{sup −1} cm{sup −2}. After thermal oxidation at 800 °C, the SiO{sub 2} layer on the NAOS-SiO{sub 2}/Si(100) structure is 2.26 nm thick, i.e., 0.24 nm thicker than that on the Si(100) surface, while after thermal oxidation at 925 °C, it is 4.2 nm thick, i.e., 0.4 nm thinner than that on Si(100). The chemical stability results from the higher atomic density of a NAOS SiO{sub 2} layer than that of a thermal oxide layer as reported in Ref. [28] (Asuha et al., 2002). Higher minority carrier lifetime in the presence of the NAOS layer indicates that the NAOS-SiO{sub 2}/Si interface with a low interface state density is preserved after thermal oxidation, which supports out-diffusion oxidation mechanism, by which a thermal oxide layer is formed on the NAOS SiO{sub 2} layer.

  10. Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

    International Nuclear Information System (INIS)

    Suvorova, N.A.; Lopez, C.M.; Irene, E.A.; Suvorova, A.A.; Saunders, M.

    2004-01-01

    (Ba,Sr)TiO 3 (BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO 2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO 2 on Si or 3.5 nm SiO 2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO 2 . Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density D it of an order of magnitude for oxidized Si substrates with a thicker SiO 2 underlayer. Further reduction of D it was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization

  11. Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

    Science.gov (United States)

    Suvorova, N. A.; Lopez, C. M.; Irene, E. A.; Suvorova, A. A.; Saunders, M.

    2004-03-01

    (Ba,Sr)TiO3(BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO2 on Si or 3.5 nm SiO2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density Dit of an order of magnitude for oxidized Si substrates with a thicker SiO2 underlayer. Further reduction of Dit was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization.

  12. Effets Josephson generalises entre antiferroaimants et entre supraconducteurs antiferromagnetiques

    Science.gov (United States)

    Chasse, Dominique

    L'effet Josephson est generalement presente comme le resultat de l'effet tunnel coherent de paires de Cooper a travers une jonction tunnel entre deux supraconducteurs, mais il est possible de l'expliquer dans un contexte plus general. Par exemple, Esposito & al. ont recemment demontre que l'effet Josephson DC peut etre decrit a l'aide du boson pseudo-Goldstone de deux systemes couples brisant chacun la symetrie abelienne U(1). Puisque cette description se generalise de facon naturelle a des brisures de symetries continues non-abeliennes, l'equivalent de l'effet Josephson devrait donc exister pour des types d'ordre a longue portee differents de la supraconductivite. Le cas de deux ferroaimants itinerants (brisure de symetrie 0(3)) couples a travers une jonction tunnel a deja ete traite dans la litterature Afin de mettre en evidence la generalite du phenomene et dans le but de faire des predictions a partir d'un modele realiste, nous etudions le cas d'une jonction tunnel entre deux antiferroaimants itinerants. En adoptant une approche Similaire a celle d'Ambegaokar & Baratoff pour une jonction Josephson, nous trouvons un courant d'aimantation alternee a travers la jonction qui est proportionnel a sG x sD ou fG et sD sont les vecteurs de Neel de part et d'autre de la jonction. La fonction sinus caracteristique du courant Josephson standard est donc remplacee.ici par un produit vectoriel. Nous montrons que, d'un point de vue microscopique, ce phenomene resulte de l'effet tunnel coherent de paires particule-trou de spin 1 et de vecteur d'onde net egal au vecteur d'onde antiferromagnetique Q. Nous trouvons egalement la dependance en temperature de l'analogue du courant critique. En presence d'un champ magnetique externe, nous obtenons l'analogue de l'effet Josephson AC et la description complete que nous en donnons s'applique aussi au cas d'une jonction tunnel entre ferroaimants (dans ce dernier cas, les traitements anterieurs de cet effet AC s'averent incomplets). Nous

  13. Mechanical behavior of SiCf/SiC composites with alternating PyC/SiC multilayer interphases

    International Nuclear Information System (INIS)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-01-01

    Highlights: ► Superior combination of flexural strength and fracture toughness of the 3D SiC/SiC composite was achieved by interface tailoring. ► Resulted composite possesses a much higher flexural strength and fracture toughness than its counterparts in literatures. ► Mechanisms that PyC/SiC multilayer coatings improve the mechanical properties were illustrated. -- Abstract: In order to tailor the fiber–matrix interface of continuous silicon carbide fiber reinforced silicon carbide (SiC f /SiC) composites for improved fracture toughness, alternating pyrolytic carbon/silicon carbide (PyC/SiC) multilayer coatings were applied to the KD-I SiC fibers using chemical vapor deposition (CVD) method. Three dimensional (3D) KD-I SiC f /SiC composites reinforced by these coated fibers were fabricated using a precursor infiltration and pyrolysis (PIP) process. The interfacial characteristics were determined by the fiber push-out test and microstructural examination using scanning electron microscopy (SEM). The effect of interface coatings on composite mechanical properties was evaluated by single-edge notched beam (SENB) test and three-point bending test. The results indicate that the PyC/SiC multilayer coatings led to an optimum interfacial bonding between fibers and matrix and greatly improved the fracture toughness of the composites.

  14. Oscillations in the fusion of the Si + Si systems

    International Nuclear Information System (INIS)

    Aguilera R, E.F.; Kolata, J.J.; DeYoung, P.A.; Vega, J.J.

    1986-02-01

    Excitation functions for the yields of all the residual nuclei from the 28 Si + 28,30 and 30 Si + 30 Si reactions have been measured via the γ-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the 28 + 28 Si reaction, we have found evidence for intermediate width structure in the 2α and the αpn channels in 28 Si + 30 Si and for broad structure in the total fusion cross sections for 30 Si + 30 Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  15. A paixão pela imagem: o eu como cenógrafo das virtualidades do si mesmo

    Directory of Open Access Journals (Sweden)

    Marina Pinheiro

    2016-03-01

    Full Text Available É propósito do presente trabalho perscrutar, através das expressões culturais da virtualização do si mesmo, a equivocidade pendular entre o fetichismo comum e as formas de estetização do desejo na atualidade tecnológica. Desde a primeira formação egoica, “projeção de superfície” do olhar materno, ao ego virtualizado nas marcações corporais extremas, ou mesmo avatarizado nos games e redes sociais; torna-se necessário à psicanálise a discussão sobre a dialética entre objetificação e possibilidades de autoração simbólica da existência na contemporaneidade.

  16. Structure of MnSi on SiC(0001)

    Science.gov (United States)

    Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

    2016-11-01

    We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

  17. Laser-controlled stress of Si nanocrystals in a free-standing Si /SiO2 superlattice

    Science.gov (United States)

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.

  18. Laser-controlled stress of Si nanocrystals in a free-standing Si/SiO2 superlattice

    International Nuclear Information System (INIS)

    Khriachtchev, Leonid; Raesaenen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar + laser radiation melts Si nanocrystals in a free-standing Si/SiO 2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3 GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means

  19. Réécritures posthumes de Tchicaya U Tam’si entre Brazzaville et Pointe-Noire

    Directory of Open Access Journals (Sweden)

    Pierre Leroux

    2015-03-01

    Full Text Available L'œuvre théâtrale de l'auteur congolais Tchicaya U Tam'si (1931-1988 se résume à trois textes : Le Zulu, Le Destin glorieux du Maréchal Nnikon-Nniku prince qu'on sort et Le Bal de Ndinga. Cependant, les nombreuses adaptations pour la scène de romans, nouvelles et autres ensembles de poésies témoignent de la volonté qu'ont eue certains artistes congolais ou français de se réapproprier l'héritage du « père de notre rêve ». Au travers de l'examen de trois spectacles montés à Brazzaville et à Pointe-Noire, cet article tente de montrer comment la scène transforme les textes et comment l'auteur lui-même devient un personnage représenté et fantasmé.

  20. P-type poly-Si prepared by low-temperature aluminum-induced crystallization and doping for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Yasuhiro; Yu, Zhenrui; Morales-Acevedo, Arturo [CINVESTAV-IPN, Mexico, D.F. (Mexico)

    2000-07-01

    P-type poly-Si thin films prepared by low temperature aluminum-induced crystallization and doping are reported. The starting material was boron-doped a-Si:H prepared by PECVD on glass substrates. Aluminum layers with different thickness were evaporated on a-Si:H surface and conventional thermal annealing was performed at temperatures ranging from 300 to 550 Celsius degrees. XRD, SIMS, and Hall effect measurements were carried out to characterize the annealed Al could be crystallized at temperature as low as 300 Celsius degrees in 60 minutes. This material has high carrier concentration as well as high Hall mobility and can be used as a p-layer of seed layer for thin film poly-Si solar cells. The technique reported here is compatible with PECVD process. [Spanish] Se informa sobre la preparacion de peliculas delgadas tipo P y Poli-Si mediante la cristalizacion inducida de aluminio a baja temperatura y el dopado. El material inicial era de boro dopado y a-Si:H preparado PECVD sobre substratos de vidrio. Se evaporaron capas de aluminio de diferente espesor sobre una superficie de a-Si:H y se llevo a cabo un destemplado termico convencional a temperaturas que varian entre 300 y 500 grados Celsius. Se llevaron a cabo mediciones de XRB, SIMS y del efecto Hall para caracterizar el aluminio destemplado para que pudiera ser cristalizado a temperaturas tan bajas como 300 grados Celsius en 60 minutos. Este material tiene una alta concentracion portadora asi como una alta movilidad Hall y puede usarse como una capa de semilla para celdas solares de pelicula delgada Poli-Si. La tecnica reportada aqui es compatible con el proceso PECVD.

  1. Isotopic effects in sub-barrier fusion of Si + Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Bourgin, D.; Čolović, P.; Corradi, L.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Grebosz, J.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Szilner, S.; Urbani, M.; Zhang, G. L.

    2018-04-01

    Background: Recent measurements of fusion cross sections for the 28Si+28Si system revealed a rather unsystematic behavior; i.e., they drop faster near the barrier than at lower energies. This was tentatively attributed to the large oblate deformation of 28Si because coupled-channels (CC) calculations largely underestimate the 28Si+28Si cross sections at low energies, unless a weak imaginary potential is applied, probably simulating the deformation. 30Si has no permanent deformation and its low-energy excitations are of a vibrational nature. Previous measurements of this system reached only 4 mb, which is not sufficient to obtain information on effects that should show up at lower energies. Purpose: The aim of the present experiment was twofold: (i) to clarify the underlying fusion dynamics by measuring the symmetric case 30Si+30Si in an energy range from around the Coulomb barrier to deep sub-barrier energies, and (ii) to compare the results with the behavior of 28Si+28Si involving two deformed nuclei. Methods: 30Si beams from the XTU tandem accelerator of the Laboratori Nazionali di Legnaro of the Istituto Nazionale di Fisica Nucleare were used, bombarding thin metallic 30Si targets (50 μ g /cm2) enriched to 99.64 % in mass 30. An electrostatic beam deflector allowed the detection of fusion evaporation residues (ERs) at very forward angles, and angular distributions of ERs were measured. Results: The excitation function of 30Si+30Si was measured down to the level of a few microbarns. It has a regular shape, at variance with the unusual trend of 28Si+28Si . The extracted logarithmic derivative does not reach the LCS limit at low energies, so that no maximum of the S factor shows up. CC calculations were performed including the low-lying 2+ and 3- excitations. Conclusions: Using a Woods-Saxon potential the experimental cross sections at low energies are overpredicted, and this is a clear sign of hindrance, while the calculations performed with a M3Y + repulsion

  2. ¿Qué relación existe entre la Perdurabilidad Empresarial Colombiana y las creencias religiosas del directivo?

    OpenAIRE

    Pinzón Mojica, Hernan Mauricio; Pinto Molina, Diana Carolina

    2011-01-01

    En el ámbito empresarial, durante mucho tiempo y aún en la actualidad, la religión se ha visto como un tema aparte. Sin embargo, la literatura del desarrollo empresarial colombiano muestra que en los inicios del siglo XX la religión tuvo una fuerte influencia tanto en los dirigentes empresariales como en la mentalidad de los empleados. No obstante, antes de entrar a discutir si existe alguna relación entre la religión que tiene el empresario y la perdurabilidad empresarial -que...

  3. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

    International Nuclear Information System (INIS)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-01-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

  4. Frontières administratives et identités communales. Le cas de la France, XVIII-XXe siècles

    Directory of Open Access Journals (Sweden)

    Claude Motte

    2009-01-01

    Full Text Available Parmi les différentes déclinaisons du terme "frontière" (naturelle, politique, administrative, identitaire, existe-t-il une combinaison d'entre elles qui résisterait le plus farouchement à l'épreuve du temps? Le cas de la France qui, au sein de l'Europe, connaît une exception administrative particulière, est intéressant à observer. Ses nombreuses frontières intérieures ont repoussé avec obstination toute tentative de réduction de leur nombre. Sans doute parce que, laissée à l'initiative des populations locales et respectée par les successifs gouvernements, la définition des territoires s'est appuyée sur la reconnaissance des identités communales construites au cours des siècles par le quotidien des habitants. La correspondance cartographique établie entre le tissu paroissial du XVIIIe siècle en France, et le maillage communal d'aujourd'hui illustre, en dépit des quelques variations observées, la remarquable stabilité de ses frontières administratives.

  5. Synthesis and characterization of laminated Si/SiC composites

    Science.gov (United States)

    Naga, Salma M.; Kenawy, Sayed H.; Awaad, Mohamed; Abd El-Wahab, Hamada S.; Greil, Peter; Abadir, Magdi F.

    2012-01-01

    Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results. PMID:25685404

  6. Synthesis and characterization of laminated Si/SiC composites

    Directory of Open Access Journals (Sweden)

    Salma M. Naga

    2013-01-01

    Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

  7. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  8. Tailoring of SiC nanoprecipitates formed in Si

    Energy Technology Data Exchange (ETDEWEB)

    Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2013-07-15

    The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

  9. Relación entre hiperlaxitud articular, dismetría de miembros inferiores y control postural con los trastornos posturales

    OpenAIRE

    Farro-Uceda, Luis; Tapia-Egoavil, Raquel; Valverde-Tarazona, César; Bautista-Chirinos, Luz; Amaya-Solis, Karen

    2016-01-01

    Objetivos: Determinar si existe relación entre hiperlaxitud articular, dismetría de miembros inferiores y la estabilidad o control postural en bipedestación con los trastornos posturales en adolescentes. Material y métodos: Estudio relacional-transversal, realizado en el Instituto Nacional de Rehabilitación “Dra. Adriana Rebaza Flores” Amistad Perú-Japón, Chorrillos-Perú. Participaron todos los estudiantes del 5º año de secundaria de un colegio privado de la ciudad de Lima. La hiperlaxitud ar...

  10. Uniform Si nano-dot fabrication using reconstructed structure of Si(110)

    Science.gov (United States)

    Yano, Masahiro; Uozumi, Yuki; Yasuda, Satoshi; Asaoka, Hidehito

    2018-06-01

    Si nano-dot (ND) formation on Si(110) is observed by means of a scanning tunneling microscope (STM). The initial Si-NDs are Si crystals that are continuous from the substrate and grow during the oxide layer desorption. The NDs fabricated on the flat surface of Si(110)-1 × 1 are surrounded by four types of facets with almost identical appearance probabilities. An increase in the size of the NDs increases the variety of its morphology. In contrast, most Si-NDs fabricated on straight-stepped surface of Si(110)-16 × 2 reconstructed structure are surrounded by only a single type of facet, namely the \\text{Si}(17,15,1)-2 × 1 plane. An appearance probability of the facet in which the base line is along the step of Si(110)-16 × 2 exceeds 75%. This finding provides a fabrication technique of uniformed structural Si-NDs by using the reconstructed structure of Si(110).

  11. Neutron tolerance of advanced SiC-fiber/CVI-SiC composites

    International Nuclear Information System (INIS)

    Katoh, Y.; Kohyama, A.; Snead, L.L.; Hinoki, T.; Hasegawa, A.

    2003-01-01

    Fusion blankets employing a silicon carbide (SiC) fiber-reinforced SiC matrix composite (SiC/SiC composite) as the structural material provide attractive features represented by high cycle efficiency and extremely low induced radioactivity. Recent advancement in processing and utilization techniques and application studies in ceramic gas turbine and advanced transportation systems, SiC/SiC composites are steadily getting matured as industrial materials. Reference SiC/SiC composites for fusion structural applications have been produced by a forced-flow chemical vapor infiltration (FCVI) method using conventional and advanced near-stoichiometric SiC fibers and extensively evaluated primarily in Japan-US collaborative JUPITER program. In this work, effect of neutron irradiation at elevated temperatures on mechanical property of these composites is characterized. Unlike in conventional SiC/SiC composites, practically no property degradation was identified in advanced composites with a thin carbon interphase by a neutron fluence level of approximately 8dpa at 800C. (author)

  12. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    International Nuclear Information System (INIS)

    Kowbel, W.; Tsou, K.T.; Withers, J.C.; Youngblood, G.E.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing

  13. Passivation of defect states in Si and Si/SiO2 interface states by cyanide treatment: improvement of characteristics of pin-junction amorphous Si and crystalline Si-based metal-oxide-semiconductor junction solar cells

    International Nuclear Information System (INIS)

    Fujiwara, N.; Fujinaga, T.; Niinobe, D.; Maida, O.; Takahashi, M.; Kobayashi, H.

    2003-01-01

    Defect states in Si can be passivated by cyanide treatment which simply involves immersion of Si materials in KCN solutions, followed by rinse. When the cyanide treatment is applied to pin-junction amorphous Si [a-Si] solar cells, the initial conversion efficiency increases. When the crown-ether cyanide treatment using a KCN solution of xylene containing 18-crown-6 is performed on i-a-Si films, decreases in the photo- and dark current densities with the irradiation time are prevented. The cyanide treatment can also passivate interface states present at Si/SiO 2 interfaces, leading to an increase in the conversion efficiency of 2 / Si (100)> solar cells.. Si-CN bonds formed by the reaction of defect states with cyanide ions have a high bond energy of about 4.5 eV and hence heat treatment at 800 0 C does not rupture the bonds, making thermal stability of the cyanide treatment.. When the cyanide treatment is applied to ultrathin SiO 2 /Si structure, the leakage current density is markedly decreased (Authors)

  14. The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN sub x /a-Si:H/a-SiN sub x structures

    CERN Document Server

    Zhang Li; Wang Li; Li Wei; Xu Jun; Huang Xin Fan; Chen Kun Ji

    2002-01-01

    Size-controlled nanocrystalline silicon (nc-Si) has been prepared from a-SiN sub x /a-Si:H/a-SiN sub x ('a' standing for amorphous) structures by thermal annealing. Transmission electron microscope analyses show that the lateral size of the nc-Si is controlled by the annealing conditions and the a-Si sublayer thickness. The deviation of the nc-Si grain size distribution decreases with the a-Si sublayer thickness, so thinner a-Si sublayers are favourable for obtaining uniform nc-Si grains. In the a-Si:H (10 nm) sample annealed at 1000 deg. C for 30 min, an obvious bi-modal size distribution of nc-Si grains appears, but no obvious bi-modal size distribution is found in other samples with thinner a-Si:H sublayers. On the basis of the experimental results, we discuss the process of transition from the sphere-like shape to the disc-like shape in the growth model of the nc-Si crystallization. The critical thickness of the a-Si sublayer for the constrained crystallization can be determined by the present model. More...

  15. Índice gonadossomático e correlações entre dimensões e peso testiculares na codorna japonesa (Coturnix coturnix japonica aos 60 dias de idade

    Directory of Open Access Journals (Sweden)

    L.L. Lanna

    2013-08-01

    Full Text Available As dimensões e o peso testicular foram avaliados em 25 machos adultos de codornas japonesas (Coturnix coturnix japonica e correlacionados entre si, a fim de se buscar obter informações que possibilitem a criação de um parâmetro preditivo da capacidade de produção espermática. As aves foram abatidas e os testículos removidos para mensuração e pesagem. As dimensões e o peso entre os testículos esquerdo e direito foram comparados. Os parâmetros testiculares foram correlacionados entre si por meio da determinação do coeficiente de correlação linear. O índice gonadossomático também foi determinado, indicando alocação de 3,68% do peso corporal em testículos nos machos avaliados, resultado maior do que os descritos na literatura. Apesar da diferença de formato entre os testículos esquerdo e direito, o peso foi semelhante, sugerindo que não há diferença na capacidade de produção espermática entre eles. Diferença estatística entre os valores biométricos indica que o testículo esquerdo é mais curto e mais arredondado, enquanto o direito é mais longo e estreito. O peso corporal apresentou baixa correlação com o peso testicular, 0,14 e 0,12 para os testículos esquerdo e direito, respectivamente. Os parâmetros que melhor se correlacionaram com o peso testicular foram a largura e a espessura. Considerando-se a identificação de um parâmetro único para comparação entre machos, a espessura do testículo esquerdo apresentou coeficiente de correlação linear de 0,89 com o somatório do peso dos dois testículos. Com base nessa informação, métodos não invasivos, como a ultrassonografia, poderiam ser utilizados para estimar o potencial reprodutivo e auxiliar na comparação de machos de codornas japonesas em núcleos de seleção de aves elite, contribuindo para melhoramento genético da espécie.

  16. Characterization of Si3N4-Al interface after corrosion tests Caracterização da interface Si3N4-Al após testes de corrosão

    Directory of Open Access Journals (Sweden)

    C. dos Santos

    2003-12-01

    Full Text Available Silicon nitride is a covalent ceramic material of high corrosion resistance and mechanical stability at elevated temperatures. Due to these properties, its use in metallurgical processes, such as the casting of alloys, is increasing. Therefore, the characterization of the interface between Si3N4 and the casted metal is of great importance to investigate possible interactions, which might deteriorate the ceramic mould or contaminate the metal. In this work, the use of Si3N4 as crucible material for Al-casting has been studied, by investigating the corrosion attack of liquid Al at a temperature of 1150 ºC during 30 days in air. The interface was characterized by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. It has been found that due to superficial oxidation two oxide layers form - SiO2 on Si3N4 and Al2O3 on Al - which effectively hinder further reactions under the conditions studied, confering high corrosion resistance to the Si3N4 crucible.Nitreto de silício (Si3N4 é um material cerâmico covalente de elevada resistência à corrosão e estabilidade mecânica em temperaturas elevadas. Devido a essas propriedades, sua utilização em processos metalúrgicos, tais como em fundição de ligas metálicas, é crescente. Desta forma, a caracterização da interface entre Si3N4 e metais fundidos é de grande interesse para investigar possíveis interações as quais poderão deteriorar o material cerâmico e/ou contaminar o metal. Nesse trabalho o uso de Si3N4 como material base de cadinhos para fundição de alumínio foi estudado, pela investigação do ataque corrosivo de Al líquido a 1150 ºC durante 30 dias, ao ar. A interface foi caracterizada por difração de raios X, microscopia eletrônica de varredura e espectroscopia de energia dispersiva. É encontrado que devido à oxidação superficial dois óxidos se formam - SiO2 no Si3N4 e Al2O3 no Al - os quais evitam possíveis reações sob as condi

  17. Resistência de união entre liga de níquel-cromo e cimentos resinosos

    Directory of Open Access Journals (Sweden)

    FRANÇA Rodrigo de Oliveira

    1998-01-01

    Full Text Available O objetivo do trabalho foi a determinação da retentividade, por ensaio de tração, entre uma liga de níquel-cromo e cimentos resinosos (Comspan, Panavia Ex e All-Bond C & B, com quatro tratamentos superficiais (liso, microjateado, ataque eletrolítico e silicoater e armazenagem por 3 e 30 dias em solução de NaCl a 0,9%, a 37° C e termociclagem intercalada na segunda (a 5 e 55° C, por 1 minuto em cada banho, perfazendo 600 ciclos. Os corpos de prova eram discos, providos de alça fixadora entre si dois a dois. Os resultados permitiram concluir que: superfícies lisas conduzem a baixíssimas retentividades e tratadas com silicoater a altíssimos valores, com qualquer cimento e condição de armazenagem; Panavia Ex com superfícies microjateadas também conduz a altas retentividades; a maior retentividade foi obtida pela combinação silicoater/All-Bond C&B.

  18. Medidas de desempeño competitivo entre empresas con diferente estructura de la propiedad del capital

    Directory of Open Access Journals (Sweden)

    Josefina Fernández-Guadaño

    2013-01-01

    Full Text Available Este trabajo analiza la evolución del comportamiento económico comparado entre las empresas propiedad de sus trabajadores y las empresas capitalistas convencionales, con la finalidad, en función de los resultados, de potenciar el reconocimiento legal europeo del modelo de sociedad limitada laboral. Se trata de un estudio de corte exploratorio, la metodología utilizada para estudiar si existen diferencias entre los dos tipos de empresas ha sido la realización de pruebas paramétricas. Los resultados del análisis no evidencian de forma empírica los efectos positivos que se presuponían a las empresas propiedad de sus trabajadores, no siendo determinantes, por tanto, para hacer una recomendación regulatoria a nivel europeo, aunque encontrándose motivos suficientes para ampliar el estudio al análisis comparado de otros sujetos con regulación legal propia e, incluso, al análisis comparado de otras formas regulatorias existentes en otros Estados Miembros de la Unión Europea.

  19. Endostatin (EntreMed).

    Science.gov (United States)

    Grosios, K

    2000-07-01

    EntreMed has licensed the worldwide rights to the angiogenesis inhibitor Endostatin, a 20 kDa C-terminal fragment of collagen XVIII, from the Children's Hospital of Boston, a teaching affiliate of Harvard Medical School. It is being developed as a potential cancer treatment and may also be useful in certain types of blindness and arthritis [227427]. EntreMed filed an IND for Endostatin in June 1999 [334125] and as of September 1999, phase I trials were underway [341462]. As of April 2000, the company had initiated plans for testing low doses of Endostatin in cancer patients using continuous infusion and sc administration in a further phase I study to be conducted in Europe [361594]. A phase I trial of Endostatin which will evaluate the safety and efficacy of Endostatin at a range of doses in no more than 100 cancer patients has been initiated. The trial will take place at the University of Texas MD Anderson Medical Center and the University of Wisconsin Cancer Center in Madison. The National Cancer Center will be sponsoring the trial, which is expected to be completed in late 2000. As of March 2000, there had been no serious adverse events attributable to Endostatin administration. The first report from this trial is expected in autumn 2000 [341462], [366312]. The mechanism of action for Endostatin remains unclear, although reports from the 91st AACR Meeting in April 2000 showed that recombinant human endostatin bound to a number of tropomyosin cDNAs in a library screen [362039]. In preclinical studies, repeated administration of Endostatin consistently shrank primary tumors and did not produce any drug resistance. In mice, a variety of tumors which had progressed to 1 to 2% of total body weight, regressed to microscopic, dormant lesions following Endostatin treatment [231418], [231470], [270673]. Types of cancers which respond to Endostatin include lung, skin, vascular and fibrosarcomas. Toxicology studies in cynomolgus monkeys showed that bolus injections of

  20. Gas leak tightness of SiC/SiC composites at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hayasaka, Daisuke, E-mail: hayasaka@oasis.muroran-it.ac.jp [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Park, Joon-Soo. [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE-SiC/SiC has extremely densified microstructure compared with other SiC/SiC composite like CVI. • Excellent helium and hydrogen gas-leak tightness of SiC/SiC composites by DEMO-NITE method from prototype industrialization production line was presented. • The excellence against stainless steel and Zircaloy at elevated temperature, together with generic excellent properties of SiC will be inevitable for innovative blanket and divertors for DEMO- and power- fusion reactors. - Abstract: SiC/SiC composite materials are attractive candidates for high heat flux components and blanket of fusion reactor, mainly due to their high temperature properties, radiation damage tolerance and low induced radioactivity. One of the challenges for SiC/SiC application in fusion reactors is to satisfy sufficient gas leak tightness of hydrogen and helium isotopes. Although many efforts have been carried-out, SiC/SiC composites by conventional processes have not been successful to satisfy the requirements, except SiC/SiC composites by NITE-methods. Toward the early realization of SiC/SiC components into fusion reactor systems process development of NITE-process has been continued. Followed to the brief introduction of recently developed DEMO-NITE process, baseline properties and hydrogen and helium gas leak tightness is presented. SiC/SiC claddings with 10 mm in diameter and 1 mm in wall thickness are tested by gas leak tightness system developed. The leak tightness measurements are done room temperature to 400 °C. Excellent gas leak tightness equivalent or superior to Zircaloy claddings for light water fission reactors is confirmed. The excellent gas leak tightness suggests nearly perfect suppression of large gas leak path in DEMO-NITE SiC/SiC.

  1. Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

    International Nuclear Information System (INIS)

    Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

    2017-01-01

    Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

  2. SOBRE LA TENSIÓN ENTRE ONTOLOGÍA E HISTORIA: EL SER DE LO POLÍTICO COMO DIFERENCIA

    Directory of Open Access Journals (Sweden)

    Nuria Yabkowski

    2010-12-01

    Full Text Available Resumen Proponer una ontología de lo político implica preguntarse por la relación que se establece entre ontología e historia. Si ambos términos se presentan como opuestos y excluyentes entre sí, entonces tendríamos que aceptar la posibilidad de que lo político pueda concebirse con plena autonomía de un contexto histórico determinado. Aquí, por el contrario, se trata de pensar una ontología de lo político que mantenga con la historia una relación distinta o, en otras palabras, una ontología política materialista. Para abordar esta problemática partimos de la obra de Nicos Poulantzas, para dar cuenta con ella de las dificultades que enfrentaba un marxismo en crisis a la hora de pensar la autonomía de la política. El posmarxismo enfrenta estos dilemas y elabora algunas respuestas sobre la relación entre ontología e historia. Para exponer lo que muchos de estos desarrollos comparten, recurrimos a la interpretación de Oliver Marchart sobre lo que él denomina el pensamiento político posfundacional (Cf. Lefort, Badiou, Laclau, Rancière. Luego recurrimos a los postulados de Gilles Deleuze, porque con ellos podemos desplazar de otra forma la tradicional antinomia entre ontología e historia. Entonces, asumiendo que el Ser de lo político es un ser que siempre se dice de la diferencia, nos abocamos a analizar críticamente las teorizaciones de Ernesto Laclau sobre la política y su forma hegemónica. Finalmente, la relación que propone Benjamín Arditi entre espectro y populismo permite pensar nuevas relaciones entre la ontología y la historia, lo político y la diferencia, dinamizando los conceptos.

  3. Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers

    Science.gov (United States)

    Scappucci, Giordano; Yeoh, L.; Sabbagh, D.; Sammak, A.; Boter, J.; Droulers, G.; Kalhor, N.; Brousse, D.; Veldhorst, M.; Vandersypen, L. M. K.; Thomas, N.; Roberts, J.; Pillarisetty, R.; Amin, P.; George, H. C.; Singh, K. J.; Clarke, J. S.

    Undoped Si/SiGe heterostructures are a promising material stack for the development of spin qubits in silicon. To deploy a qubit into high volume manufacturing in a quantum computer requires stringent control over substrate uniformity and quality. Electron mobility and valley splitting are two key electrical metrics of substrate quality relevant for qubits. Here we present low-temperature magnetotransport measurements of strained Si quantum wells with mobilities in excess of 100000 cm2/Vs fabricated on 300 mm wafers within the framework of advanced semiconductor manufacturing. These results are benchmarked against the results obtained in Si quantum wells deposited on 100 mm Si wafers in an academic research environment. To ensure rapid progress in quantum wells quality we have implemented fast feedback loops from materials growth, to heterostructure FET fabrication, and low temperature characterisation. On this topic we will present recent progress in developing a cryogenic platform for high-throughput magnetotransport measurements.

  4. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  5. Centrifugally cast Zn-27Al-xMg-ySi alloys and their in situ (Mg2Si + Si)/ZA27 composites

    International Nuclear Information System (INIS)

    Wang Qudong; Chen Yongjun; Chen Wenzhou; Wei Yinhong; Zhai Chunquan; Ding Wenjiang

    2005-01-01

    Effects of composition, mold temperature, rotating rate and modification on microstructure of centrifugally cast Zn-27Al-xMg-ySi alloys have been investigated. In situ composites of Zn-27Al-6.3Mg-3.7Si and Zn-27Al-9.8Mg-5.2Si alloys were fabricated by centrifugal casting using heated permanent mold. These composites consist of three layers: inner layer segregates lots of blocky primary Mg 2 Si and a litter blocky primary Si, middle layer contains without primary Mg 2 Si and primary Si, outer layer contains primary Mg 2 Si and primary Si. The position, quantity and distribution of primary Mg 2 Si and primary Si in the composites are determined jointly by alloy composition, solidification velocity under the effect of centrifugal force and their floating velocity inward. Na salt modifier can refine grain and primary Mg 2 Si and make primary Mg 2 Si distribute more evenly and make primary Si nodular. For centrifugally cast Zn-27Al-3.2Mg-1.8Si alloy, the microstructures of inner layer, middle layer and outer layer are almost similar, single layer materials without primary Mg 2 Si and primary Si are obtained, and their grain sizes increased with the mold temperature increasing

  6. siRNAmod: A database of experimentally validated chemically modified siRNAs.

    Science.gov (United States)

    Dar, Showkat Ahmad; Thakur, Anamika; Qureshi, Abid; Kumar, Manoj

    2016-01-28

    Small interfering RNA (siRNA) technology has vast potential for functional genomics and development of therapeutics. However, it faces many obstacles predominantly instability of siRNAs due to nuclease digestion and subsequently biologically short half-life. Chemical modifications in siRNAs provide means to overcome these shortcomings and improve their stability and potency. Despite enormous utility bioinformatics resource of these chemically modified siRNAs (cm-siRNAs) is lacking. Therefore, we have developed siRNAmod, a specialized databank for chemically modified siRNAs. Currently, our repository contains a total of 4894 chemically modified-siRNA sequences, comprising 128 unique chemical modifications on different positions with various permutations and combinations. It incorporates important information on siRNA sequence, chemical modification, their number and respective position, structure, simplified molecular input line entry system canonical (SMILES), efficacy of modified siRNA, target gene, cell line, experimental methods, reference etc. It is developed and hosted using Linux Apache MySQL PHP (LAMP) software bundle. Standard user-friendly browse, search facility and analysis tools are also integrated. It would assist in understanding the effect of chemical modifications and further development of stable and efficacious siRNAs for research as well as therapeutics. siRNAmod is freely available at: http://crdd.osdd.net/servers/sirnamod.

  7. Development of SiC/SiC composite for fusion application

    International Nuclear Information System (INIS)

    Kohyama, A.; Katoh, Y.; Snead, L.L.; Jones, R.H.

    2001-01-01

    The recent efforts to develop SiC/SiC composite materials for fusion application under the collaboration with Japan and the USA are provided, where material performance with and without radiation damage has been greatly improved. One of the accomplishments is development of the high performance reaction sintering process. Mechanical and thermal conductivity are improved extensively by process modification and optimization with inexpensive fabrication process. The major efforts to make SiC matrix by CVI, PIP and RS methods are introduced together with the representing baseline properties. The resent results on mechanical properties of SiC/SiC under neutron irradiation are quite positive. The composites with new SiC fibers, Hi-Nicalon Type-S, did not exhibit mechanical property degradation up to 10 dpa. Based on the materials data recently obtained, a very preliminary design window is provided and the future prospects of SiC/SiC technology integration is provided. (author)

  8. Growth of CoSi2 on Si(001) by reactive deposition epitaxy

    International Nuclear Information System (INIS)

    Lim, C.W.; Shin, C.-S.; Gall, D.; Zuo, J.M.; Petrov, I.; Greene, J.E.

    2005-01-01

    CaF 2 -structure CoSi 2 layers were formed on Si(001) by reactive deposition epitaxy (RDE) and compared with CoSi 2 layers obtained by conventional solid phase growth (SPG). In both sets of experiments, Co was deposited by ultrahigh-vacuum magnetron sputtering and CoSi 2 formed at 600 deg. C. However, in the case of RDE, CoSi 2 formation occurred during Co deposition while for SPG, Co was deposited at 25 deg. C and silicidation took place during subsequent annealing. X-ray diffraction pole figures and transmission electron microscopy results demonstrate that RDE CoSi 2 layers are epitaxial with a cube-on-cube relationship (001) CoSi 2 parallel (001) Si and [100] CoSi 2 parallel[100] Si . In contrast, SPG films are polycrystalline with an average grain size of ≅1000 A and a mixed 111/002/022/112 orientation. We attribute the striking difference to rapid Co diffusion into the Si(001) substrate during RDE for which the high Co/Si reactivity gives rise to a flux-limited reaction resulting in the direct formation of the disilicide phase. In contrast, sequential nucleation and transformation among increasingly Si-rich phases--from orthorhombic Co 2 Si to cubic CoSi to CoSi 2 --during SPG results in polycrystalline layers with a complex texture

  9. Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures

    International Nuclear Information System (INIS)

    Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

    2014-01-01

    Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance–voltage (C–V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3–4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements. (paper)

  10. Comparative study of SiC- and Si-based photovoltaic inverters

    Science.gov (United States)

    Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

    2017-01-01

    This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

  11. Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

    Science.gov (United States)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-11-01

    Silicon carbide (SiC) coatings with varying thickness (ranging from 0.14 μm to 2.67 μm) were deposited onto the surfaces of Type KD-I SiC fibres with native carbonaceous surface using chemical vapour deposition (CVD) process. Then, two dimensional SiC fibre reinforced SiC matrix (2D SiCf/SiC) composites were fabricated using polymer infiltration and pyrolysis (PIP) process. Influences of the fibre coating thickness on mechanical properties of SiC fibre and SiCf/SiC composite were investigated using single-filament test and three-point bending test. The results indicated that flexural strength of the composites initially increased with the increasing CVD SiC coating thickness and reached a peak value of 363 MPa at the coating thickness of 0.34 μm. Further increase in the coating thickness led to a rapid decrease in the flexural strength of the composites. The bending modulus of composites showed a monotonic increase with increasing coating thickness. A chemical attack of hydrogen or other ions (e.g. a C-H group) on the surface of SiC fibres during the coating process, owing to the formation of volatile hydrogen, lead to an increment of the surface defects of the fibres. This was confirmed by Wang et al. [35] in their work on the SiC coating of the carbon fibre. In the present study, the existing ˜30 nm carbon on the surface of KD-I fibre [36] made the fibre easy to be attacked. Deposition of non-stoichiometric SiC, causing a decrease in strength. During the CVD process, a small amount of free silicon or carbon always existed [35]. The existence of free silicon, either disordered the structure of SiC and formed a new source of cracks or attacked the carbon on fibre surface resulting in properties degeneration of the KD-I fibre. The effect of residual stress. The different thermal expansion coefficient between KD-I SiC fibre and CVD SiC coating, which are 3 × 10-6 K-1 (RT ˜ 1000 °C) and 4.6 × 10-6 K-1 (RT ˜ 1000 °C), respectively, could cause residual stress

  12. Conversion of wood flour/SiO2/phenolic composite to porous SiC ceramic containing SiC whiskers

    Directory of Open Access Journals (Sweden)

    Li Zhong

    2013-01-01

    Full Text Available A novel wood flour/SiO2/phenolic composite was chosen to be converted into porous SiC ceramic containing SiC whiskers via carbothermal reduction. At 1550°C the composite is converted into porous SiC ceramic with pore diameters of 10~40μm, and consisting of β-SiC located at the position of former wood cell walls. β-SiC wire-like whiskers of less than 50 nm in diameter and several tens to over 100 μm in length form within the pores. The surface of the resulting ceramic is coated with β-SiC necklace-like whiskers with diameters of 1~2μm.

  13. Tunable Synthesis of SiC/SiO2 Heterojunctions via Temperature Modulation

    Directory of Open Access Journals (Sweden)

    Wei Li

    2018-05-01

    Full Text Available A large-scale production of necklace-like SiC/SiO2 heterojunctions was obtained by a molten salt-mediated chemical vapor reaction technique without a metallic catalyst or flowing gas. The effect of the firing temperature on the evolution of the phase composition, microstructure, and morphology of the SiC/SiO2 heterojunctions was studied. The necklace-like SiC/SiO2 nanochains, several centimeters in length, were composed of SiC/SiO2 core-shell chains and amorphous SiO2 beans. The morphologies of the as-prepared products could be tuned by adjusting the firing temperature. In fact, the diameter of the SiO2 beans decreased, whereas the diameter of the SiC fibers and the thickness of the SiO2 shell increased as the temperature increased. The growth mechanism of the necklace-like structure was controlled by the vapor-solid growth procedure and the modulation procedure via a molten salt-mediated chemical vapor reaction process.

  14. (113) Facets of Si-Ge/Si Islands; Atomic Scale Simulation

    Science.gov (United States)

    Kassem, Hassan

    We have studied, by computer simulation, some static and vibrationnal proprieties of SiGe/Si islands. We have used a Valence Force Field combined to Monte Carlo technique to study the growth of Ge and SiGe on (001)Si substrates. We have focalised on the case of large pyramidal islands presenting (113) facets on the free (001)Si surface with various non uniform composition inside the islands. The deformation inside the islands and Raman spectroscopy are discussed.

  15. Preparação e caracterização de materiais compósitos SiC/caulim/Al via "squeeze-casting" Preparation and characterization of SiC/kaolin/Al composite materials by squeeze- casting

    Directory of Open Access Journals (Sweden)

    M. Freitas

    2009-09-01

    Full Text Available Na busca de materiais com propriedades diferenciadas, vem aumentando nos últimos anos as pesquisas em materiais compósitos. Um dos importantes métodos de fabricação destes compósitos é o processo de infiltração sob pressão de metal fundido denominado "squeeze-casting". Este processo oferece algumas vantagens, tais como facilidade de produzir o compósito, baixo custo e capacidade de formação de estruturas em rede. Neste trabalho foram produzidos e caracterizados compósitos SiC-Al, com concentrações em caulim variando entre 10 e 50% em substituição a fase majoritária SiC. As pré-formas cerâmicas foram produzidas controlando-se a fração granulométrica do SiC/caulim para uma melhor infiltração. Estas pré-formas, após sinterização a 1100 ºC/1 h, resultaram altamente porosas, sendo a porosidade aumentada com o aumento do caulim em substituição ao SiC. Análises de DRX mostraram a existência de partículas de quartzo além da fase SiC como constituintes das pré-formas. Durante o processo de infiltração e tratamento térmico, o alumínio no estado líquido reagiu preferencialmente com o quartzo e outros aluminossilicatos da pré-forma reduzindo-os, precipitando alumina e silício na microestrutura, a qual apresentou também alumínio em excesso que não reagiu no processo. A sílica e os silicatos da pré-forma, ao reagirem preferencialmente com o alumínio, evitaram a reação do Al com o SiC, prevenindo a formação da fase Al4C3,, a qual é altamente higroscópica e causa a degradação do compósito. Dependendo da composição, os compósitos SiC-caulim-Al desenvolvidos neste trabalho, podem ser usados em aplicações que envolvam elevada resistência mecânica à flexão (240 a 300 MPa, baixa densidade e dureza superficial entre 180 e 380 kgf/mm².In search of materials with different properties, has been increasing the research on composite materials in recent years. One of the important methods of

  16. Relación entre hiperlaxitud articular, dismetría de miembros inferiores y control postural con los trastornos posturales

    OpenAIRE

    Farro-Uceda, Luis; Tapia-Egoavil, Raquel; Valverde-Tarazona, César; Bautista-Chirinos, Luz; Amaya-Solis, Karen

    2017-01-01

    Objetivos: Determinar si existe relación entre hiperlaxitud articular, dismetría de miembros inferiores y la estabilidad o control postural en bipedestación con los trastornos posturales en adolescentes. Material y métodos: Estudio relacionaltransversal, realizado en el Instituto Nacional de Rehabilitación “Dra. Adriana Rebaza Flores” Amistad Perú-Japón,Chorrillos-Perú. Participaron todos los estudiantes del 5º año de secundaria de un colegio privado de la ciudad de Lima. La hiperlaxitud arti...

  17. Correlación entre bilirrubina serica y bilirrubinometría transcutánea en neonatos estratificados por edad gestacional

    OpenAIRE

    Furzán, Jaime A; Expósito, Mercedes; Luchón, Consuelo

    2007-01-01

    Introducción: La ictericia neonatal es un dilema diagnóstico y terapéutico muy común. Las decisiones basadas en mediciones seriadas de bilirrubina sérica se asocian con dolor en el niño, tiempo de espera y ansiedad por los resultados. La bilirrubinometría transcutánea puede ser una alternativa confiable si se demuestra su validez para poblaciones e instituciones particulares. Objetivos: Establecer el grado de correlación entre bilirrubina sérica total (BST) y bilirrubina transcutánea (BTC) en...

  18. Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

    International Nuclear Information System (INIS)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2017-01-01

    Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

  19. Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD

    Science.gov (United States)

    2014-01-01

    In this work, non-stoichiometric silicon oxide (SiO x ) films and (SiO x /SiO y ) junctions, as-grown and after further annealing, are characterized by different techniques. The SiO x films and (SiO x /SiO y ) junctions are obtained by hot filament chemical vapor deposition technique in the range of temperatures from 900°C to 1,150°C. Transmittance spectra of the SiO x films showed a wavelength shift of the absorption edge thus indicating an increase in the optical energy band gap, when the growth temperature decreases; a similar behavior is observed in the (SiO x /SiO y ) structures, which in turn indicates a decrease in the Si excess, as Fourier transform infrared spectroscopy (FTIR) reveals, so that, the film and junction composition changes with the growth temperature. The analysis of the photoluminescence (PL) results using the quantum confinement model suggests the presence of silicon nanocrystal (Si-nc) embedded in a SiO x matrix. For the case of the as-grown SiO x films, the absorption and emission properties are correlated with quantum effects in Si-nc and defects. For the case of the as-grown (SiO x /SiO y ) junctions, only the emission mechanism related to some kinds of defects was considered, but silicon nanocrystal embedded in a SiO x matrix is present. After thermal annealing, a phase separation into Si and SiO2 occurs, as the FTIR spectra illustrates, which has repercussions in the absorption and emission properties of the films and junctions, as shown by the change in the A and B band positions on the PL spectra. These results lead to good possibilities for proposed novel applications in optoelectronic devices. PACS 61.05.-a; 68.37.Og; 61.05.cp; 78.55.-m; 68.37.Ps; 81.15.Gh PMID:25342935

  20. Thermal Stability of siRNA Modulates Aptamer- conjugated siRNA Inhibition

    Directory of Open Access Journals (Sweden)

    Alexey Berezhnoy

    2012-01-01

    Full Text Available Oligonucleotide aptamer-mediated in vivo cell targeting of small interfering RNAs (siRNAs is emerging as a useful approach to enhance the efficacy and reduce the adverse effects resulting from siRNA-mediated genetic interference. A current main impediment in aptamer-mediated siRNA targeting is that the activity of the siRNA is often compromised when conjugated to an aptamer, often requiring labor intensive and time consuming design and testing of multiple configurations to identify a conjugate in which the siRNA activity has not been significantly reduced. Here, we show that the thermal stability of the siRNA is an important parameter of siRNA activity in its conjugated form, and that siRNAs with lower melting temperature (Tm are not or are minimally affected when conjugated to the 3′ end of 2′F-pyrimidine-modified aptamers. In addition, the configuration of the aptamer-siRNA conjugate retains activity comparable with the free siRNA duplex when the passenger strand is co-transcribed with the aptamer and 3′ overhangs on the passenger strand are removed. The approach described in this paper significantly reduces the time and effort necessary to screening siRNA sequences that retain biological activity upon aptamer conjugation, facilitating the process of identifying candidate aptamer-siRNA conjugates suitable for in vivo testing.

  1. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  2. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Science.gov (United States)

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  3. Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

    Science.gov (United States)

    Chagarov, Evgueni A.; Kavrik, Mahmut S.; Fang, Ziwei; Tsai, Wilman; Kummel, Andrew C.

    2018-06-01

    Comprehensive Density-Functional Theory (DFT) Molecular Dynamics (MD) simulations were performed to investigate interfaces between a-HfO2 and SiGe or Ge semiconductors with fully-stoichiometric a-SiO2 or sub-oxide SiO interlayers. The electronic structure of the selected stacks was calculated with a HSE06 hybrid functional. Simulations were performed before and after hydrogen passivation of residual interlayer defects. For the SiGe substrate with Ge termination prior to H passivation, the stacks with a-SiO suboxide interlayer (a-HfO2/a-SiO/SiGe) demonstrate superior electronic properties and wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/SiGe). After H passivation, most of the a-HfO2/a-SiO2/SiGe defects are passivated. To investigate effect of random placement of Si and Ge atoms additional simulations with a randomized SiGe slab were performed demonstrating improvement of electronic structure. For Ge substrates, before H passivation, the stacks with a SiO suboxide interlayer (a-HfO2/a-SiO/Ge) also demonstrate wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/Ge). However, even for a-HfO2/a-SiO/Ge, the Fermi level is shifted close to the conduction band edge (CBM) consistent with Fermi level pinning. Again, after H passivation, most of the a-HfO2/a-SiO2/Ge defects are passivated. The stacks with fully coordinated a-SiO2 interlayers have much stronger deformation and irregularity in the semiconductor (SiGe or Ge) upper layers leading to multiple under-coordinated atoms which create band-edge states and decrease the band-gap prior to H passivation.

  4. Gd-Ni-Si system

    International Nuclear Information System (INIS)

    Bodak, O.I.; Shvets, A.F.

    1983-01-01

    By X-ray phase analysis method isothermal cross section of phase diagram of the Gd-Ni-Si system at 870 K is studied. The existence of nine previously known compounds (GdNisub(6.72)Sisub(6.28), GdNi 10 Si 2 , GdNi 5 Si 3 , GdNi 4 Si, GdNi 2 Si 2 , GdNiSi 3 , GdNiSi 2 , Gd 3 Ni 6 Si 2 and GdNiSi) is confirmed and three new compounds (GdNisub(0.2)Sisub(1.8), Gdsub(2)Nisub(1-0.8)Sisub(1-1.2), Gd 5 NiSi 4 ) are found. On the base of Gd 2 Si 3 compound up to 0.15 at. Ni fractions, an interstitial solid solution is formed up to 0.25 at Ni fractions dissolution continues of substitution type. The Gd-Ni-Si system is similar to the Y-Ni-Si system

  5. Práticas de si de cuidadores familiares na atenção domiciliar

    Directory of Open Access Journals (Sweden)

    Bruna Ferreira Ribeiro

    2017-09-01

    Full Text Available Introdução: Atualmente há expansão de serviços de atenção domiciliar, sendo necessário que algum familiar seja o cuidador. Deste modo, é relevante compreender as práticas de si dos cuidadores familiares no contexto da atenção domiciliar. Materiais e Métodos: Pesquisa qualitativa, inserida na vertente pós-estruturalista. Participaram da pesquisa 18 cuidadores familiares de pacientes com doenças crônicas ou terminais vinculados ao serviço de atenção domiciliar de um hospital do sul do Brasil. A produção de informações ocorreu por meio de entrevista narrativa, realizada entre julho de 2015 e março de 2016. Os participantes foram entrevistados em três encontros, com periodicidade semanal. A análise se constituiu de questões elaboradas diante das informações produzidas articuladas com as teorizações foucaultianas, sobre cuidado de si, relações de poder e discurso. Resultados e Discussão: Duas categorias foram elaboradas: Constituição do sujeito cuidador: quais os discursos que o atravessam? e práticas de si como caminho de ressignificação ao cuidado. As práticas de si foram configuradas como modo de acesso a verdade, se caracterizando como fio condutor do cuidado de si, levando os cuidadores, nas suas mais diversas formas de ser, a se subjetivarem e se reconstituírem, através de si e do outro. Conclusões: Ser cuidador familiar é circundado por diversos discursos que atravessam seu modo de cuidar e que as práticas de si foram configuradas como modo de acesso a verdade. Como citar este artigo: Ribeiro BF, Oliveira SG, Tristão FSA, Santos-Júnior JRG, Farias TA. Práticas de si de cuidadores familiares na atenção domiciliar. Rev Cuid. 2017; 8(3: 1809-25. http://dx.doi.org/10.15649/cuidarte.v8i3.429

  6. Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC

    International Nuclear Information System (INIS)

    Guziewicz, M; Kaminska, E; Piotrowska, A; Golaszewska, K; Domagala, J Z; Poisson, M-A; Lahreche, H; Langer, R; Bove, P

    2008-01-01

    The stresses in GaN-based HEMT structures grown on both single crystal 6H SiC(0001) and Si(111) have been compared to these in the HEMT structures grown on new composite substrates engendered as a thin monocrystalline film attached to polycrystalline 3C-SiC substrate. By using HRXRD technique and wafer curvature method we show that stress of monocrystalline layer in composite substrates of the type mono-Si/poly-SiC is lower than 100 MPa and residual stress of epitaxial GaN buffer grown on the composite substrate does not exceed 0.31 GPa, but in the cases of single crystal SiC or Si substrates the GaN buffer stress is compressive in the range of -0.5 to -0.75 GPa. The total stress of the HEMT structure calculated from strains is consistent with the averaged stress of the multilayers stack measured by wafer curvature method. The averaged stress of HEMT structure grown on single crystals is higher than those in structures grown on composites substrates

  7. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  8. SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

    Science.gov (United States)

    Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

    2017-08-01

    In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

  9. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    International Nuclear Information System (INIS)

    Wu Yuying; Liu Xiangfa; Jiang Binggang; Huang Chuanzhen

    2009-01-01

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  10. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yuying [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China)], E-mail: wyy532001@163.com; Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Shandong Binzhou Bohai Piston Co., Ltd., Binzhou 256602, Shandong (China); Jiang Binggang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Huang Chuanzhen [School of Mechanical Engineering, Shandong University, Jinan 250061 (China)

    2009-05-27

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  11. Effect of irradiation on thermal expansion of SiCf/SiC composites

    International Nuclear Information System (INIS)

    Senor, D.J.; Trimble, D.J.; Woods, J.J.

    1996-06-01

    Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC f /SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) β-SiC at all temperatures

  12. Ciberagresión entre adolescentes: prevalencia y diferencias de género

    Directory of Open Access Journals (Sweden)

    2017-01-01

    Full Text Available El presente trabajo tiene como objetivos analizar la prevalencia de la ciberagresión y la cibervictimización entre adolescentes en Asturias (España e identificar posibles diferencias de género. Para ello, fueron evaluados 3.175 adolescentes, de 12 a 18 años, seleccionados aleatoriamente de entre la población de estudiantes de Educación Secundaria Obligatoria de Asturias. Se aplicaron tres autoinformes: un cuestionario «ad hoc» sobre datos sociodemográficos y manejo de tecnologías de comunicación; el «Cuestionario de Ciberagresión para Adolescentes» (CYBA, para evaluar con qué frecuencia el adolescente evaluado reconoce haber ejercido diferentes conductas de ciberagresión durante los últimos tres meses; y el «Cuestionario de Cibervictimización para adolescentes» (CYVIC, para evaluar con qué frecuencia el adolescente reconoce haber sido víctima de diferentes tipos de ciberagresión en los últimos tres meses. Los resultados obtenidos muestran una prevalencia muy variable en función del tipo de ciberagresión o cibervictimización analizado. La ciberagresión verbal y la exclusión online son más habituales que la suplantación y la ciberagresión visual. Por lo general, no existen diferencias estadísticamente significativas entre chicos y chicas. En los casos en que existen, la tendencia general es que los chicos son más agresores que las chicas y las chicas más víctimas que los chicos, si bien las diferencias son pequeñas o muy pequeñas. Se discuten las implicaciones de estos resultados para la investigación futura y el tratamiento educativo del problema.

  13. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

    International Nuclear Information System (INIS)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-01-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [es

  14. Las relaciones entre Chile y Suecia durante el primer gobierno de Olof Palme, 1969-1976

    Directory of Open Access Journals (Sweden)

    Fernando Camacho Padilla

    2014-06-01

    Full Text Available Durante el primer gobierno del socialdemócrata Olof Palme, las relaciones bilaterales entre Chile y Suecia fueron las más intensas de toda su historia, tanto en cercanía como en conflictividad. La razón la encontramos en los distintos fenómenos políticos que vivió Chile en ese periodo, puesto que Palme coincidió temporalmente con tres gobiernos claramente diferenciados: la Democracia Cristiana, la Unidad Popular y el Régimen Militar. Si las relaciones sueco-chilenas tuvieron su mejor momento durante el mandato de Salvador Allende, el golpe de Estado significó todo lo contrario. El compromiso que tuvo el embajador de Suecia, Harald Edelstam, por quienes eran perseguidos en Chile le llevó a su expulsión, lo que se tradujo en un claro deterioro de las relaciones y el inicio de una nueva etapa marcada por el gran contingente de exiliados que comenzaron a llegar a Suecia. Este trabajo analiza los principales acontecimientos diplomáticos ocurridos entre Chile y Suecia así como las consecuencias que tuvieron durante el gobierno de Olof Palme.

  15. Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor

    Science.gov (United States)

    Hasanah, L.; Suhendi, E.; Khairrurijal

    2018-05-01

    Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased.

  16. Thermochemical instability effects in SiC-based fibers and SiC{sub f}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H.; Jones, R.H. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1997-08-01

    Thermochemical instability in irradiated SiC-based fibers with an amorphous silicon oxycarbide phase leads to shrinkage and mass loss. SiC{sub f}/SiC composites made with these fibers also exhibit mass loss as well as severe mechanical property degradation when irradiated at 800{degrees}C, a temperature much below the generally accepted 1100{degrees}C threshold for thermomechanical degradation alone. The mass loss is due to an internal oxidation mechanism within these fibers which likely degrades the carbon interphase as well as the fibers in SiC{sub f}/SiC composites even in so-called {open_quotes}inert{close_quotes} gas environments. Furthermore, the mechanism must be accelerated by the irradiation environment.

  17. Relación entre la potencia muscular de extremidades inferiores y tronco con la velocidad de salida de la bola en el swing de drive en golf

    OpenAIRE

    Lorena Torres Ronda; Joan Solé Fortó; Lisímaco Vallejo Cuéllar; Xavier Balius Matas

    2010-01-01

    A pesar del interés emergente en el acondicionamiento físico en el golf, se han llevado a cabo pocos estudios para valorar la relación entre la potencia mecánica y el rendimiento en golf. El objetivo de este estudio fue valorar si existía una correlación entre la velocidad de salida de la bola del swing de drive y la potencia muscular de extremidades inferiores y tronco, en un grupo de 8 golfistas (16,8 ± 1,4 años; 2,2 ± 1,8 Handicap; 63,1 ± 6,4 kg.; 172,7 ± 7,5 cm). El test incluyó medicione...

  18. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    International Nuclear Information System (INIS)

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  19. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

    International Nuclear Information System (INIS)

    Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

    2007-01-01

    A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

  20. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers; Las tensiones residuales y las propiedades mecánicas de compuestos multicapa de Si3N4/SiC con diferentes capas de SiC

    Energy Technology Data Exchange (ETDEWEB)

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-11-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [Spanish] Se ha investigado el efecto de las tensiones residuales en la resistencia, dureza y trabajo de fractura de los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC. Puede ser una manera eficaz de diseñar y optimizar las propiedades mecánicas de los compuestos multicapa de Si3N4/SiC mediante el control de las propiedades de las capas de SiC. Los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC se fabricaron por medio de colado en cinta en medio acuoso y sinterización sin presión. Las tensiones residuales se calcularon mediante el uso de la simulación ANSYS, los valores máximos de las fuerzas de tracción y compresión fueron 553,2 MPa y −552,1 MPa, respectivamente. Se observó una fractura escalonada a partir de las superficies de fractura. La fracción de capas de deslaminación aumenta con la tensión residual, lo que puede mejorar la fiabilidad de los materiales. La fuerza de tracción residual era beneficiosa para la mejora de la dureza y el trabajo de fractura, pero la resistencia de los compuestos disminuyó.

  1. Circumferential tensile test method for mechanical property evaluation of SiC/SiC tube

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Ju-Hyeon, E-mail: 15096018@mmm.muroran-it.ac.jp [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Park, Joon-soo [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Nakazato, Naofumi [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE SiC/SiC cooling channel system to be a candidate of divertor system in future. • Hoop strength is one of the important factors for a tube. • This research studies the relationship between deformation and strain of SiC/SiC tube. - Abstract: SiC fiber reinforced/SiC matrix (SiC/SiC) composite is expected to be a candidate material for the first-wall, components in the blanket and divertor of fusion reactors in future. In such components, SiC/SiC composites need to be formed to be various shapes. SiC/SiC tubes has been expected to be employed for blanket and divertor after DEMO reactor, but there is not established mechanical investigation technique. Recent progress of SiC/SiC processing techniques is likely to realize strong, having gas tightness SiC/SiC tubes which will contribute for the development of fusion reactors. This research studies the relationship between deformation and strain of SiC/SiC tube using a circumferential tensile test method to establish a mechanical property investigation method of SiC/SiC tubes.

  2. Dielectric Properties of SiCf/PyC/SiC Composites After Oxidation

    Institute of Scientific and Technical Information of China (English)

    SONG Huihui; ZHOU Wancheng; LUO Fa; QING Yuchang; CHEN Malin; LI Zhimin

    2016-01-01

    In this paper, the SiC fiber-reinforced SiC matrix composites with a 0.15mm thick pyrocarbon interphase (notedas SiCf/PyC/SiC) were prepared by chemical vapor infiltration (CVI). The SiCf/PyC/SiC were oxidized in air at 950℃ for 50h. The dielectric properties after this high temperature oxidation were investigated in X-band from room temperature (RT) to 700℃. Results suggested that:e' of the SiCf/PyC/SiC after oxidation increased at first then de-creased with temperature elevating;e" increased with temperature raising in the temperature range studied.

  3. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001).

    Science.gov (United States)

    Li, Lianbi; Zang, Yuan; Hu, Jichao; Lin, Shenghuang; Chen, Zhiming

    2017-05-25

    The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm², the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm². Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  4. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001

    Directory of Open Access Journals (Sweden)

    Lianbi Li

    2017-05-01

    Full Text Available The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001 Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  5. Relación entre síndrome de burnout, estrategias de afrontamiento y engagement

    Directory of Open Access Journals (Sweden)

    Paula Andrea Montoya Zuluaga

    2012-01-01

    Full Text Available Este artículo tiene como finalidad analizar, a partir de las teorías existentes, la relación entre las estrategias de afrontamiento, el síndrome de burnout y el engagement. El síndrome de burnout si bien se desarrolla en un contexto organizacional, es individual y ello ya implica la existencia de factores de riesgo que llegan a activarse (ya sea para posibilitar su aparición por las estrategias de afrontamiento que se asumen o evitar su desarrollo, cuando hay engagement en contextos laborales donde hay presencia de alta carga laboral, bajas recompensas por el oficio llevado a cabo y ambientes laborales en los que no se posibilita la participación para la toma de decisiones.

  6. Espumas vítreas do sistema Li2O-ZrO2-SiO2-Al2O 3 produzidas pelo processo gelcasting

    OpenAIRE

    Sousa,E. de; Rambo,C. R.; Ortega,F. S.; Oliveira,A. P. N. de; Pandolfelli,V. C.

    2009-01-01

    Espumas vítreas do sistema Li2O-ZrO2-SiO2-Al2O 3 (LZSA) foram produzidas pelo processo gelcasting, associado à aeração de suspensões cerâmicas, sem controle atmosférico. Por meio da adição de diferentes concentrações de agente espumante (Fongraminox) foi possível obter espumas vítreas com densidade relativa variando entre uma estreita faixa (0,10-0,15). As espumas vítreas apresentaram resistência à compressão de 2,5-3,7 MPa, que correspondem a porosidade entre 85 e 89% e macroestrutra com por...

  7. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    KAUST Repository

    Pasha, Farhan Ahmad; Bendjeriou-Sedjerari, Anissa; Huang, Kuo-Wei; Basset, Jean-Marie

    2014-01-01

    : [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage

  8. Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation

    International Nuclear Information System (INIS)

    Kling, A.; Ortiz, M.I.; Prieto, A.C.; Rodriguez, A.; Rodriguez, T.; Jimenez, J.; Ballesteros, C.; Soares, J.C.

    2006-01-01

    Nanomemories, containing Ge-nanoparticles in a SiO 2 matrix, can be produced by dry thermal oxidation of a SiGe layer deposited onto a Si-wafer with a barrier SiO 2 layer on its top. Rutherford backscattering spectrometry has been used to characterize the kinetics of the oxidation process, the composition profile of the growing oxide, the Ge-segregation and its diffusion into the barrier oxide in samples with thin and thick barrier oxide layers. The Ge segregated during the oxidation of the SiGe layer diffuses into the barrier oxide. In the first case the diffusion through the thin oxide is enhanced by the proximity of the substrate that acts as a sink for the Ge, resulting in the formation of a low Ge concentration SiGe layer in the surface of the Si-wafer. In the second case, the Ge-diffusion progresses as slowly as in bulk SiO 2 . Since barrier oxide layers as thin as possible are favoured for device fabrication, the structures should be oxidized at lower temperatures and the initial SiGe layer thickness reduced to minimize the Ge-diffusion

  9. Microstructure and properties of MoSi2-MoB and MoSi2-Mo5Si3 molybdenum silicides

    International Nuclear Information System (INIS)

    Schneibel, J.H.; Sekhar, J.A.

    2003-01-01

    MoSi 2 -based intermetallics containing different volume fractions of MoB or Mo 5 Si 3 were fabricated by hot-pressing MoSi 2 , MoB, and Mo 5 Si 3 powders in vacuum. Both classes of alloys contained approximately 5 vol.% of dispersed silica phase. Additions of MoB or Mo 5 Si 3 caused the average grain size to decrease. The decrease in the grain size was typically accompanied by an increase in flexure strength, a decrease in the room temperature fracture toughness, and a decrease in the hot strength (compressive creep strength) measured around 1200 deg. C, except when the Mo 5 Si 3 effectively became the major phase. Oxidation measurements on the two classes of alloys were carried out in air. Both classes of alloys were protected from oxidation by an in-situ adherent scale that formed on exposure to high temperature. The scale, although not analyzed in detail, is commonly recognized in MoSi 2 containing materials as consisting mostly of SiO 2 . The MoB containing materials showed an increase in the scale thickness and the cyclic oxidation rate at 1400 deg. C when compared with pure MoSi 2 . However, in contrast with the pure MoSi 2 material, oxidation at 1400 deg. C began with a weight loss followed by a weight gain and the formation of the protective silica layer. The Mo 5 Si 3 containing materials experienced substantial initial weight losses followed by regions of small weight changes. Overall, the MoB and Mo 5 Si 3 additions to MoSi 2 tended to be detrimental for the mechanical and oxidative properties

  10. Evolution of a novel Si-18Mn-16Ti-11P alloy in Al-Si melt and its influence on microstructure and properties of high-Si Al-Si alloy

    Directory of Open Access Journals (Sweden)

    Xiao-Lu Zhou

    Full Text Available A novel Si-18Mn-16Ti-11P master alloy has been developed to refine primary Si to 14.7 ± 1.3 μm, distributed uniformly in Al-27Si alloy. Comparing with traditional Cu-14P and Al-3P, Si-18Mn-16Ti-11P provided a much better refining effect, with in-situ highly active AlP. The refined Al-27Si alloy exhibited a CTE of 16.25 × 10−6/K which is slightly higher than that of Sip/Al composites fabricated by spray deposition. The UTS and elongation of refined Al-27Si alloy were increased by 106% and 235% comparing with those of unrefined alloy. It indicates that the novel Si-18Mn-16Ti-11P alloy is more suitable for high-Si Al-Si alloys and may be a candidate for refining hypereutectic Al-Si alloy for electronic packaging applications. Moreover, studies showed that TiP is the only P-containing phase in Si-18Mn-16Ti-11P master alloy. A core-shell reaction model was established to reveal mechanism of the transformation of TiP to AlP in Al-Si melts. The transformation is a liquid-solid diffusion reaction driven by chemical potential difference and the reaction rate is controlled by diffusion. It means sufficient holding time is necessary for Si-18Mn-16Ti-11P master alloy to achieve better refining effect. Keywords: Hypereutectic Al-Si alloy, Primary Si, Refinement, AlP, Thermal expansion behavior, Si-18Mn-16Ti-11P master alloy

  11. Oblique roughness replication in strained SiGe/Si multilayers

    NARCIS (Netherlands)

    Holy, V.; Darhuber, A.A.; Stangl, J.; Bauer, G.; Nützel, J.-F.; Abstreiter, G.

    1998-01-01

    The replication of the interface roughness in SiGe/Si multilayers grown on miscut Si(001) substrates has been studied by means of x-ray reflectivity reciprocal space mapping. The interface profiles were found to be highly correlated and the direction of the maximal replication was inclined with

  12. Transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si1-xCx nanocomposites mixed with Si nanoparticles and C atoms

    International Nuclear Information System (INIS)

    Shin, J.W.; Oh, D.H.; Kim, T.W.; Cho, W.J.

    2009-01-01

    Bright-field transmission electron microscopy (TEM) images, high-resolution TEM (HRTEM) images, and fast-Fourier transformed electron-diffraction patterns showed that n-butyl terminated Si nanoparticles were aggregated. The formation of Si 1-x C x nanocomposites was mixed with Si nanoparticles and C atoms embedded in a SiO 2 layer due to the diffusion of C atoms from n-butyl termination shells into aggregated Si nanoparticles. Atomic force microscopy (AFM) images showed that the Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms existed in almost all regions of the SiO 2 layer. The formation mechanism of Si nanoparticles and the transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms are described on the basis of the TEM, HRTEM, and AFM results. These results can help to improve the understanding of the formation mechanism of Si nanoparticles.

  13. Positron annihilation at the Si/SiO2 interface

    International Nuclear Information System (INIS)

    Leung, T.C.; Weinberg, Z.A.; Asoka-Kumar, P.; Nielsen, B.; Rubloff, G.W.; Lynn, K.G.

    1992-01-01

    Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO 2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (S int ) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that S int depends directly on holes at interface states or traps at the Si/SiO 2 interface

  14. Leer rápido no siempre es igual a comprender: Examinando la relación entre velocidad y comprensión

    Directory of Open Access Journals (Sweden)

    Gabriela Silva-Maceda

    2017-12-01

    Full Text Available Un cambio en la forma de evaluar la lectura en México en la educación primaria ha sido la introducción de la medición de la velocidad de lectura (palabras por minuto del alumno como principal indicador de logro para la comprensión lectora. Esto tiene implicaciones directas en la enseñanza de la lectura. El objetivo de este estudio es examinar la relación entre velocidad lectora y comprensión lectora en una muestra de niños mexicanos entre 1° y 4° grados, para: a identificar la forma en que la velocidad de lectura de textos y la velocidad de lectura de palabras inventadas se relacionan con la comprensión lectora y b si estas relaciones difieren entre el ciclo 1 (1.° y 2.° grados y el ciclo 2 (3.° y 4.° grados de educación primaria. Se plantearon tres hipótesis y una pregunta de investigación. Las hipótesis fueron: 1 la relación entre la velocidad lectora en textos regulares tendrá una mayor asociación que la velocidad lectora de pseudopalabras con la comprensión lectora a lo largo de los cuatro grados; 2 la velocidad lectora de pseudopalabras tendrá una asociación mayor con comprensión lectora en el ciclo 1 que en el ciclo 2 y; 3 la velocidad lectora de textos regulares tendrá una asociación mayor con comprensión lectora en el ciclo 1 que en el ciclo 2. La pregunta de investigación exploratoria indagó si la velocidad sigue siendo predictiva de la comprensión lectora después de considerar la precisión. Los resultados aportan evidencia que apoyan las tres hipótesis y el análisis realizado para la pregunta de investigación mostró que la velocidad de lectura de textos sólo explicaba una varianza adicional del 6% después de controlar la precisión de lectura de pseudopalabras. Los resultados son interpretados en el contexto de la literatura existente.

  15. Pressureless sintering of dense Si3N4 and Si3N4/SiC composites with nitrate additives

    International Nuclear Information System (INIS)

    Kim, J.Y.; Iseki, Takayoshi; Yano, Toyohiko

    1996-01-01

    The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si 3 N 4 and a Si 3 N 4 /SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si 3 N 4 particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si 3 N 4 particles milled with oxide additives. Monolithic Si 3 N 4 could be sintered to 94% of theoretical density (TD) at 1,500 C with nitrate additives. The sintering temperature was about 100 C lower than the case with oxide additives. After pressureless sintering at 1,750 C for 2 h in N 2 , the bulk density of a Si 3 N 4 /20 wt% SiC composite reached 95% TD with nitrate additives

  16. Complicaciones obstétricas y médicas en el Trastorno de Déficit Atencional/Hiperactividad (TDAH): ¿hay diferencias entre los subtipos?

    OpenAIRE

    Connie Capdevila-Brophy; José Blas Navarro-Pastor; Josep Artigas-Pallarés; Jordi Obiols-Llandrich

    2007-01-01

    El debate actual sobre los subtipos de Trastorno de Déficit Atencional/ Hiperactividad (TDAH) se centra en determinar si las similitudes y diferencias halladas en la sintomatología asociada aportan evidencia para conceptualizar los subtipos como manifestaciones de distinto trastorno. El objetivo de este estudio retrospectivo ex post facto es investigar las diferencias entre los subtipos de TDAH con predominio de inatención (TDAH-I) (n = 20) y TDAH combinado (TDAH-C) (n = 39) en...

  17. Scènes de plage dans la peinture hollandaise du XVIIe siècle: l'entrée de la plage dans l'espace des citadins

    Directory of Open Access Journals (Sweden)

    Rémy Knafou

    2000-06-01

    Full Text Available Les scènes de plage sont une catégorie de la peinture hollandaise, inventée au XVIIe siècle. L'analyse d'un corpus de tableaux peints durant le Siècle d’Or permet de montrer que le «désir de rivage» analysé par Alain Corbin est apparu sur le littoral de la mer du Nord dès le XVIIe siècle avec l'ouverture de la plage aux citadins oisifs venus des villes voisines.

  18. No se puede asegurar la existencia de asociación entre tratamiento del síndrome de déficit de atención con estimulantes y mayor incidencia de muerte súbita

    OpenAIRE

    Fernando Carvajal, Encina; Buñuel Álvarez, José Cristóbal

    2009-01-01

    El objetivo de este artículo es determinar si existe asociación entre la muerte súbita (MS) y el tratamiento con medicamentos estimulantes del sistema nervioso central (SNC) utilizados para el tratamiento del síndrome de déficit de atención con hiperactividad (TDAH).

  19. Chemical vapor deposition of Si/SiC nano-multilayer thin films

    International Nuclear Information System (INIS)

    Weber, A.; Remfort, R.; Woehrl, N.; Assenmacher, W.; Schulz, S.

    2015-01-01

    Stoichiometric SiC films were deposited with the commercially available single source precursor Et_3SiH by classical thermal chemical vapor deposition (CVD) as well as plasma-enhanced CVD at low temperatures in the absence of any other reactive gases. Temperature-variable deposition studies revealed that polycrystalline films containing different SiC polytypes with a Si to carbon ratio of close to 1:1 are formed at 1000 °C in thermal CVD process and below 100 °C in the plasma-enhanced CVD process. The plasma enhanced CVD process enables the reduction of residual stress in the deposited films and offers the deposition on temperature sensitive substrates in the future. In both deposition processes the film thickness can be controlled by variation of the process parameters such as the substrate temperature and the deposition time. The resulting material films were characterized with respect to their chemical composition and their crystallinity using scanning electron microscope, energy dispersive X-ray spectroscopy (XRD), atomic force microscopy, X-ray diffraction, grazing incidence X-ray diffraction, secondary ion mass spectrometry and Raman spectroscopy. Finally, Si/SiC multilayers of up to 10 individual layers of equal thickness (about 450 nm) were deposited at 1000 °C using Et_3SiH and SiH_4. The resulting multilayers features amorphous SiC films alternating with Si films, which feature larger crystals up to 300 nm size as measured by transmission electron microscopy as well as by XRD. XRD features three distinct peaks for Si(111), Si(220) and Si(311). - Highlights: • Stoichiometric silicon carbide films were deposited from a single source precursor. • Thermal as well as plasma-enhanced chemical vapor deposition was used. • Films morphology, crystallinity and chemical composition were characterized. • Silicon/silicon carbide multilayers of up to 10 individual nano-layers were deposited.

  20. Formation of metallic Si and SiC nanoparticles from SiO2 particles by plasma-induced cathodic discharge electrolysis in chloride melt

    International Nuclear Information System (INIS)

    Tokushige, M.; Tsujimura, H.; Nishikiori, T.; Ito, Y.

    2013-01-01

    Silicon nanoparticles are formed from SiO 2 particles by conducting plasma-induced cathodic discharge electrolysis. In a LiCl–KCl melt in which SiO 2 particles were suspended at 450 °C, we obtained Si nanoparticles with diameters around 20 nm. During the electrolysis period, SiO 2 particles are directly reduced by discharge electrons on the surface of the melt just under the discharge, and the deposited Si atom clusters form Si nanoparticles, which leave the surface of the original SiO 2 particle due to free spaces caused by a molar volume difference between SiO 2 and Si. We also found that SiC nanoparticles can be obtained using carbon anode. Based on Faraday's law, the current efficiency for the formation of Si nanoparticles is 70%

  1. Formation of Si/Ge/Si heterostructures with quantum dots

    International Nuclear Information System (INIS)

    Zinov'ev, V.A.; Dvurechenskij, A.V.; Novikov, P.L.

    2003-01-01

    It is present the Monte Carlo simulation of epitaxial embedding of faceted three-dimensional Ge islands (quantum dots) in a Si matrix. Under a Si flux these islands expand and undergo a shape change (from pyramidal to drop-like shape). The main expansion occurs at initial stage of embedding in Si (deposition of 1-2 monolayers). This change is controlled by surface diffusion. The shape of island can be preserved when one uses the higher Si fluxes. The reason of island conservation lies in blocking of Ge surface diffusion [ru

  2. Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

    International Nuclear Information System (INIS)

    Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

    2001-01-01

    The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

  3. Effects of atomic hydrogen on the selective area growth of Si and Si1-xGex thin films on Si and SiO2 surfaces: Inhibition, nucleation, and growth

    International Nuclear Information System (INIS)

    Schroeder, T.W.; Lam, A.M.; Ma, P.F.; Engstrom, J.R.

    2004-01-01

    Supersonic molecular beam techniques have been used to study the nucleation of Si and Si 1-x Ge x thin films on Si and SiO 2 surfaces, where Si 2 H 6 and GeH 4 have been used as sources. A particular emphasis of this study has been an examination of the effects of a coincident flux of atomic hydrogen. The time associated with formation of stable islands of Si or Si 1-x Ge x on SiO 2 surfaces--the incubation time--has been found to depend strongly on the kinetic energy of the incident molecular precursors (Si 2 H 6 and GeH 4 ) and the substrate temperature. After coalescence, thin film morphology has been found to depend primarily on substrate temperature, with smoother films being grown at substrate temperatures below 600 deg. C. Introduction of a coincident flux of atomic hydrogen has a large effect on the nucleation and growth process. First, the incubation time in the presence of atomic hydrogen has been found to increase, especially at substrate temperatures below 630 deg. C, suggesting that hydrogen atoms adsorbed on Si-like sites on SiO 2 can effectively block nucleation of Si. Unfortunately, in terms of promoting selective area growth, coincident atomic hydrogen also decreases the rate of epitaxial growth rate, essentially offsetting any increase in the incubation time for growth on SiO 2 . Concerning Si 1-x Ge x growth, the introduction of GeH 4 produces substantial changes in both thin film morphology and the rate nucleation of poly-Si 1-x Ge x on SiO 2 . Briefly, the addition of Ge increases the incubation time, while it lessens the effect of coincident hydrogen on the incubation time. Finally, a comparison of the maximum island density, the time to reach this density, and the steady-state polycrystalline growth rate strongly suggests that all thin films [Si, Si 1-x Ge x , both with and without H(g)] nucleate at special sites on the SiO 2 surface, and grow primarily via direct deposition of adatoms on pre-existing islands

  4. Anomalous defect processes in Si implanted amorphous SiO2, II

    International Nuclear Information System (INIS)

    Fujita, Tetsuo; Fukui, Minoru; Okada, Syunji; Shimizu-Iwayama, Tsutomu; Hioki, Tatsumi; Itoh, Noriaki

    1994-01-01

    Aanomalous features of the defects in Si implanted amorphous SiO 2 are reported. The numbers of E 1 prime centers and B 2 centers are found to increase monotonically with implanted Si dose, in contrast to the saturating feature of these numbers in Ar implanted samples. Moreover, when H ions are implanted in amorphous SiO 2 predamaged by Si implantation, both of the density and the number of E 1 prime centers increase and they reach a constant value at a small H dose. We point out that these anomalies can be explained in terms of the difference in the cross-section for defect annihilation in the specimens implanted with Si ions and other ions, in accordance with the homogeneous model proposed by Devine and Golanski. We consider that the main mechanism of defect annihilation is the recombination of an E 1 prime center and an interstitial O, which is stabilized by an implanted Si, reducing the cross-section in Si-implanted specimens. ((orig.))

  5. Structural and electrical evaluation for strained Si/SiGe on insulator

    International Nuclear Information System (INIS)

    Wang Dong; Ii, Seiichiro; Ikeda, Ken-ichi; Nakashima, Hideharu; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi

    2006-01-01

    Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (D it ) of SiGe/BOX are approximately 1 x 10 12 cm -2 eV -1 , which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high D it of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed

  6. A mulher proletária e o desenvolvimento da individualidade para-si no romance “Mãe” de Máximo Gorki

    Directory of Open Access Journals (Sweden)

    Marilsa Miranda de Souza

    2014-10-01

    Full Text Available O artigo trata de análise do romance Mãe de Máximo Gorki a partir da categoria marxista Individualidade para-si aplicada por Duarte (1993. A individualidade para-si é entendida como uma concepção histórico-social da individualidade humana que se fundamenta na relação objetivação/apropriação e entre alienação/humanização que coloca o ser humano como um constante “vir a ser”, como síntese do particular e das objetivações genéricas para-si construídas nas relações sociais de produção. A análise centra-se no desenvolvimento da individualidade da mulher proletária, principal personagem do romance, forjada na luta revolucionaria dos socialistas russos no inicio do século XX.

  7. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  8. On the line intensity ratios of prominent Si II, Si III, and Si IV multiplets

    International Nuclear Information System (INIS)

    Djenize, S.; Sreckovic, A.; Bukvic, S.

    2010-01-01

    Line intensities of singly, doubly and triply ionized silicon (Si II, Si III, and Si IV, respectively) belonging to the prominent higher multiplets, are of interest in laboratory and astrophysical plasma diagnostics. We measured these line intensities in the emission spectra of pulsed helium discharge. The Si II line intensity ratios in the 3s3p 22 D-3s 2 4p 2 P o , 3s 2 3d 2 D-3s 2 4f 2 F o , and 3s 2 4p 2 P o -3s 2 4d 2 D transitions, the Si III line intensity ratios in the 3s3d 3 D-3s4p 3 P o , 3s4p 3 P o -3s4d 3 D, 3s4p 3 P o -3s5s 3 S, 3s4s 3 S-3s4p 3 P o , and 3s4f 3 F o -3s5g 3 G transitions, and the Si IV line intensity ratios in the 4p 2 P o -4d 2 D and 4p 2 P o -5s 2 S transitions were obtained in a helium plasma at an electron temperature of about 17,000 ± 2000 K. Line shapes were recorded using a spectrograph and an ICCD camera as a highly-sensitive detection system. The silicon atoms were evaporated from a Pyrex discharge tube designed for the purpose. They represent impurities in the optically thin helium plasma at the silicon ionic wavelengths investigated. The line intensity ratios obtained were compared with those available in the literature, and with values calculated on the basis of available transition probabilities. The experimental data corresponded well with line intensity ratios calculated using the transition probabilities obtained from a Multi Configuration Hartree-Fock approximation for Si III and Si IV spectra. We recommend corrections of some Si II transition probabilities.

  9. Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

    Science.gov (United States)

    Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

    2013-05-01

    We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

  10. Élisabeth BADINTER, Mme du Châtelet, Mme d’Épinay ou l’ambition féminine au XVIIIe siècle

    OpenAIRE

    Duprat, Annie

    2009-01-01

    Cet ouvrage est la réédition, un peu transformée et augmentée, d’un livre qu’Élisabeth Badinter avait consacré en 1983 à ces deux femmes savantes du siècle des Lumières, Emilie du Châtelet et Louise d’Épinay, sous le titre Émilie, Emilie, l’ambition féminine au XVIIIe siècle. Ce titre un peu obscur devait attirer l’attention sur les similitudes (de destin, de vie, de comportement et d’intérêts scientifiques entre les deux femmes, Louise d’Épinay se faisant appeler Émilie pour plaire à son ama...

  11. Ni-Si oxide as an inducing crystallization source for making poly-Si

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Zhiguo; Liu, Zhaojun; Li, Juan; Wu, Chunya; Xiong, Shaozhen [Institute of Photo-electronics, Nankai University, Tianjin (China); Zhao, Shuyun; Wong, Man; Kwok, Hoi Sing [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China)

    2010-04-15

    Nickel silicon oxide mixture was sputtered on a-Si with Ni-Si alloy target with Ni:Si weight ratio of 1:9 and used as a new inducing source for metal induced lateral crystallization (MILC). The characteristics of the resulted poly-Si materials induced by Ni-Si oxide with different thickness were nearly the same. This means the metal induced crystallization with this new inducing source has wide processing tolerance to make MILC poly-Si. Besides, it reduced the residual Ni content in the resulted poly-Si film. The transfer characteristic curve of poly-Si TFT and a TFT-OLED display demo made with this kind of new inducing source were also presented in this paper. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. “Tu não vais me faltar”: tessituras entre fantasma e (denegação nas psicoses

    Directory of Open Access Journals (Sweden)

    Manoel Luce Madeira

    Full Text Available Resumo O conceito de denegação foi estabelecido por Freud a partir da noção de recalcamento e da clínica das neuroses - trata-se de um mecanismo específico de enlace entre negação e afirmação. Este artigo busca calcar sua originalidade, primeiramente propondo que diferentes costuras entre negação e afirmação são igualmente reincidentes nas psicoses. Nesse sentido, ressalta-se que estudos teórico-clínicos que articulam a denegação fenomenológica e estruturalmente às psicoses ainda são escassos. Tais costuras singulares, distintas da denegação estritamente freudiana, recebem aqui a grafia (denegação. Em segundo lugar, este trabalho se pretende original por propor a (denegação não apenas como fenômeno clínico, mas como operador em si no tratamento das psicoses, e, para tanto, sustenta essa hipótese a partir do caso clínico do adolescente aqui nomeado Luizel. Por fim, busca evidenciar a intrínseca relação entre (denegação e esboço fantasmático no apaziguamento dos sintomas psicóticos em transferência.

  13. Alpha-particle irradiation induced defects in SiO2 films of Si-SiO2 structures

    International Nuclear Information System (INIS)

    Koman, B.P.; Gal'chynskyy, O.V.; Kovalyuk, R.O.; Shkol'nyy, A.K.

    1996-01-01

    The aim of the work was to investigate alpha-particle irradiation induced defects in Si-SiO 2 structures by means of the thermostimulated discharge currents (TSDC) analysis. The object of investigation were (p-Si)-SiO 2 structures formed by a combined oxidation of the industrial p-Si wafers in dry and wet oxygen at temperature of 1150 C. The TSD currents were investigated in the temperature range between 90 and 500 K under linear heating rate. Pu 238 isotopes were the source of alpha-particles with an energy of 4-5 MeV and a density of 5.10 7 s -1 cm -2 . The TSD current curves show two peculiar maxima at about 370 and 480 K. Alpha-particle irradiation doesn't affect the general shape of the TSDC curves but leads to a shift of the maximum at 370 K and reduces the total electret charge which is accumulated in the Si-SiO 2 structures during polarization. The energy distribution function of the defects which are involved in SiO 2 polarization has been calculated. It showes that defects with activation energies of about 0.8 and 1.0 eV take part in forming the electret state, and these activation energies have certain energy distributions. It has been found that the TSDC maximum at 370 K has space charge nature and is caused by migration of hydrogen ions. In irradiated samples hydrogen and natrium ions localize on deeper trapping centres induced by alpha-particle irradiation. (orig.)

  14. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    Science.gov (United States)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  15. Hybrid Integrated Si/SiN Platforms for Wideband Optical Processing

    Science.gov (United States)

    2017-05-08

    annealing process, makes the process prone to dopant redistribution, that hinderers the SiN deposition after full Si device fabrication. To resolve...with 220 nm of crystalline Si. In parallel, a Si die goes through a wet oxidation process to grow 5 μm of thermal oxide. In the next step, 400 nm of... annealing methods. As a figure of merit in hydrophilic bonding, we monitored the surface roughness and bonding strength of a thin oxide layer to

  16. Estudo comparativo entre audiometria tonal limiar e resposta auditiva de estado estavel em normouvintes

    Directory of Open Access Journals (Sweden)

    Roberto Miquelino de Oliveira Beck

    2014-01-01

    Full Text Available Introdução: As respostas auditivas de estado estável permitem avaliar de forma objetiva limiares auditivos frequência-específica. A audiometria tonal é o exame padrão-ouro; no entanto, nem sempre pode ser conclusiva, principalmente em crianças e adultos não colaborativos. Objetivo: Comparar os limiares auditivos da RAEE aos da audiometria tonal em indivíduos com audição normal. Materiais e métodos: Foram incluídos neste estudo prospectivo de corte transversal 26 adultos (52 orelhas, de ambos os gêneros, com audiometria normal e sem queixas otológicas. Os pacientes foram submetidos a anamnese, otomicroscopia, audiometria e imitanciometria. A seguir, realizou-se avaliação de respostas auditivas de estado estável. Os resultados obtidos foram analisados estatisticamente e comparados entre si. Resultados: A diferença entre os limiares (em dB NA obtidos em ambos os exames para cada frequência testada foi de 7,12 dB para 500 Hz; 7,6 dB para 1000 Hz; 8,27 dB para 2000 Hz e 9,71 dB para 4000 Hz, com limiares mais elevados na RAEE, em todas as frequências. Não houve diferença estatística entre as médias para cada frequência testada. Conclusão: Os limiares obtidos na RAEE foram comparáveis aos da audiometria tonal em indivíduos normouvintes; entretanto, não deve ser usado como único método de avaliação auditiva.

  17. LA RELACIÓN ENTRE LA RELIGIÓN REVELADA Y LA RELIGIÓN RACIONAL EN IMMANUEL KANT.

    Directory of Open Access Journals (Sweden)

    Luis Tapia

    2012-06-01

    Full Text Available El presente artículo se centra en el estudio de la filosofía de Kant en el ámbito religioso y, de manera específica, en la relación que puede establecerse entre la religión revelada y lo que Kant propone como religión racional. Se busca establecer si con la noción de religión racional quedan superadas, y negadas como caminos viables, las religiones históricas concretas. Se destaca cómo, en el pensamiento de Kant, la religión revelada existe en función de la religión racional, como un medio o vehículo hacia ella.

  18. Formation mechanism of SiC in C-Si system by ion irradiation

    International Nuclear Information System (INIS)

    Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

    2003-01-01

    The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

  19. Comparison of energy expenditure and closed-loop performance of thermal and reactive distillation sequences coupled for biodiesel production; Comparacion de gasto energetico y desempeno a lazo cerrado de secuencias de destilacion reactiva y termicamente acopladas para produccion de biodiesel

    Energy Technology Data Exchange (ETDEWEB)

    Cornejo-Jacob, J.L [Universidad Michoacana de San Nicolas de Hidalgo, Morelia, Michoacan (Mexico); Vazquez-Ojeda, M; Segovia-Hernandez, J.G; Hernandez, S [Universidad de Guanajuato, Guanajuato, Guanajuato (Mexico); Maya-Yescas, R. [Universidad Michoacana de San Nicolas de Hidalgo, Morelia, Michoacan (Mexico)]. E-mail: rmayay@umich.mx

    2013-03-15

    Biodiesel is the common name for fatty acid methyl esters, obtained by esterification (basic catalysis) or trans-esterification (acid catalysis) of vegetable or animal oils with alcohols, and used as liquid fuel. Production involves the reaction, under mild conditions, between the oil and, typically, excess of methanol. Traditional production of biodiesel exhibits some handicaps, such as the shift of equilibrium to fatty acids by using excess of alcohol that must be separated and recycled. As alternative, it is possible to integrate reaction/separation operations into a single intensified unit, a reactive distillation column, followed by a second separation unit. These configurations exhibit several advantages such as shifting equilibrium in the reactive region and, because of the thermal integration with the second unit, energy savings during products separation. In order to design these production sequences taking advantage of steady state knowledge (energy savings) and considering dynamic performance, this work performs a controllability analysis for six possible configurations; open-loop control properties, evaluated by single value decomposition, are probed by implementing PI controllers to the system. The reactive distillation column coupled to a stripper, without reboilers, shows to be the best option in terms of closed-loop performance and energy savings. [Spanish] Biodiesel es el nombre comun dado a metil esteres de acidos grasos obtenidos por esterificacion (catalisis basica) o trans-esterificacion (catalisis acida) de aceites animales o vegetales con alcoholes, y usados como combustibles liquidos. Su produccion involucra la reaccion entre el aceite y, tipicamente, exceso de metanol a condiciones moderadas. La produccion tradicional de biodiesel exhibe algunas desventajas como el desplazamiento del equilibrio hacia acidos grasos debido al exceso de alcohol, que debe ser separado y reciclado. Alternativamente, es posible integrar las operaciones reaccion

  20. Silicon Effects on Properties of Melt Infiltrated SiC/SiC Composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Gyekenyesi, John Z.; Hurst, Janet B.

    2000-01-01

    Silicon effects on tensile and creep properties, and thermal conductivity of Hi-Nicalon SiC/SiC composites have been investigated. The composites consist of 8 layers of 5HS 2-D woven preforms of BN/SiC coated Hi-Nicalon fiber mats and a silicon matrix, or a mixture of silicon matrix and SiC particles. The Hi-Nicalon SiC/silicon and Hi-Nicalon SiC/SiC composites contained about 24 and 13 vol% silicon, respectively. Results indicate residual silicon up to 24 vol% has no significant effect on creep and thermal conductivity, but does decrease the primary elastic modulus and stress corresponding to deviation from linear stress-strain behavior.

  1. Les communautés savantes européennes à la fin du siècle des Lumières

    Directory of Open Access Journals (Sweden)

    René Sigrist

    2013-08-01

    Full Text Available Le présent article traite de la localisation des savants européens à la fin du XVIIIe siècle. Une première méthode consiste à cartographier la «République des sciences» à partir de la Liste des astronomes connus actuellement vivants établie par Jean III Bernoulli entre 1776 et 1779. Une seconde méthode localise les membres et correspondants des six principales académies scientifiques de l'époque, soit celles de Paris, Londres, Berlin, St-Pétersbourg, Stockholm et Bologne. Dans le cas particulier de la France, la recherche met en évidence l'articulation spatiale entre la communauté académique de la capitale, les villes de province et les centres étrangers.

  2. Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

    Energy Technology Data Exchange (ETDEWEB)

    Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal [Physics of Electronic Materials Research Division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10, Bandung 40132 (Indonesia)

    2015-04-16

    In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

  3. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  4. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    International Nuclear Information System (INIS)

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  5. Redundância entre métricas da qualidade ambiental de riachos em paisagem agrícola

    Directory of Open Access Journals (Sweden)

    Marcel Okamoto Tanaka

    2015-11-01

    Full Text Available Indicadores ambientais são amplamente usados para avaliação da qualidade dos corpos d’água. Como o monitoramento envolve alto custo de amostragem, e a construção de índices multimétricos pressupõe métricas não correlacionadas, este estudo avaliou se havia correlação entre métricas que caracterizam o uso e cobertura do solo, composição da zona ripária e estrutura da floresta, bem como correlações entre indicadores das comunidades de macroinvertebrados e peixes. O estudo foi feito em 12 afluentes de baixa ordem dos rios Jacaré-Pepira e Jacaré-Guaçu, formando um gradiente de estresse ambiental no estado de São Paulo. Não houve correlação entre as métricas relacionadas ao uso e cobertura do solo, e apenas a proporção de pastos foi negativamente correlacionada com algumas métricas da estrutura da floresta ripária. Assim, tanto as informações do uso e cobertura do solo quanto sobre a composição da zona ripária e estrutura das florestas podem ser importantes na avaliação ambiental de riachos. As métricas relacionadas às comunidades de macroinvertebrados foram correlacionadas entre si, assim como a maioria das métricas relacionadas às comunidades de peixes. Estudos propondo índices multimétricos não encontraram correlação entre estas variáveis, mas avaliaram riachos em situações extremas (preservados vs. impactados, sendo os riachos impactados influenciados por diferentes condutores de degradação, o que pode resultar em respostas distintas das comunidades biológicas. Os resultados deste estudo sugerem que o desenvolvimento de índices deve ser bastante específico para cada região estudada, e que muitas vezes as avaliações são feitas em relação a condutores de impactos específicos, que podem variar entre diferentes sistemas.

  6. Diferencia en la relación entre el plano S-N y el plano de Frankfort en las distintas maloclusiones

    Directory of Open Access Journals (Sweden)

    Lourdes Feregrino-Vejar

    2016-01-01

    Full Text Available Introducción: Se ha visto que en algunos pacientes no concuerdan los resultados cefalométricos con lo que se observa clínicamente, estas discordancias pueden dar interpretaciones diagnósticas inadecuadas. Proffit recomienda siempre anotar la inclinación del plano S-N respecto al plano de Frankfort, si éste se aparta significativamente de los 6° deberán corregirse todas las medidas que se basen en este plano en función de esa diferencia. Objetivo: Determinar el ángulo formado por los planos SN y Frankfort en pacientes sin maloclusión dental y determinar si existe diferencia en dicho ángulo entre las distintas clases esqueletales. Metodología: La muestra consistió en 180 radiografías laterales de cráneo que se dividieron en 4 grupos de 45 radiografías de pacientes sin maloclusión dental, 45 de pacientes con maloclusión clase I de Angle, 45 de clase II y 45 de clase III. Se utilizaron los planos de S-N y Frankfort, así como el ángulo ANB. Resultados: En el grupo sin maloclusión el promedio del ángulo S-N Frankfort fue de 9.68º ± 2.6º, en la maloclusión clase I de Angle fue de 9.4º ± 2.58º, en la clase II de 8.48º ± 2.8º y en la clase III de 9.4º ± 2.45º. Conclusiones: De acuerdo con los resultados obtenidos se concluye que existe diferencia estadísticamente significativa entre la población estudiada que presenta ángulos mayores y la norma establecida por Proffit. Sin embargo, cuando se hizo la comparación entre los grupos sin maloclusión y con maloclusión clase I, II y III no se encontraron diferencias significativas.

  7. Le vol sous l’œil des médecins légistes. Étude du concept de kleptomanie au cours du XIXe siècle

    OpenAIRE

    Bogani, Lisa

    2016-01-01

    Introduit en 1816 par le Dr Matthey, le concept de kleptomanie connait de multiples évolutions au cours du long xixe siècle. Alors qu’il parvient difficilement à se faire reconnaître des magistrats et des aliénistes du premier xixe siècle, il réussit finalement à se maintenir et à s’assoir solidement dans les prétoires de la iiie République. Entre temps, ses caractéristiques évoluent sensiblement en raison des nouvelles découvertes cliniques de l’aliénation mentale et de l’apparition de la fi...

  8. Diferencias entre la composición sectorial y ocupacional de las principales ciudades chilenas

    Directory of Open Access Journals (Sweden)

    Marcelo Lufín Varas

    2010-08-01

    Full Text Available La planifcación regional y urbana ha tendido a fjarse exclusivamente en la composición sectorial de las economías locales, asumiendo en forma implícita que la estructura de ocupaciones por actividad es similar a lo largo de un país. Si bien este supuesto parece ser cierto para el conjunto del tejido productivo, se encuentran diferencias signifcativas cuando se analizan ocupaciones específcas. Entre ellas destacan aquellas intensivas en conocimiento, las cuales tienden a estar sobrerrepresen-tadas en las principales ciudades. Se propone una metodología para el análisis de la relación existente entre la estructura de ocupaciones y la estructura sectorial y se aplica al estudio de las principales ciudades chilenas en 2002 a partir de la información del Censo de población, con el objetivo de estimar en qué medida estas estructuras divergen y si existen concentraciones relativas de ocupaciones, observándose que aquellas relacionadas con el conocimiento y la toma de decisiones empresariales tienen una presencia mayor que la esperada en el área metropolitana de Santiago.Regional and urban planning have tended to be exclusively focused on the industrial mix of local economies, implicitly assuming that the occupational mix of economic activities is similar throughout a country. Tis assumption seems to be right fom the perspective of the productive system as a whole, however signifcant diferences arise when analyzing certain occupations. Among them, knowledge-intensive occupations stand out and tend to be overrepresented in the main urban areas. A methodolog y is proposed to analyze the relationship between the occupational and industrial structures. Tis methodology is applied to the case of the principal Chilean cities in 2002 using data fom the population Census in order to estimate the extent to which these structures diverge and whether or not there are relative concentrations of occupations. Results show that the presence of managerial

  9. Preparation and Characterization of SiO2/SiCN Core-shell Ceramic Microspheres

    Directory of Open Access Journals (Sweden)

    ZHANG Hai-yuan

    2017-05-01

    Full Text Available The SiO2/PSN core-shell microspheres were prepared via an emulsion reaction combined with the polymer-derived ceramics (PDCs method using polysilazane (PSN in situ polymerization on the surface of SiO2 modified by silane coupling agents MPS, followed by pyrolysis process to obtain SiO2/SiCN core-shell ceramic microspheres. The effects of raw mass ratio, curing time and pyrolysis temperature on the formation and the morphology of core-shell microspheres were studied. The morphology, chemical composition and phase transformation were characterized by SEM, EDS, TEM, FT-IR and XRD. The results show that after reaction for 4h at 200℃, SiO2 completely coated PSN forms a core-shell microsphere with rough surface when the mass ratio of SiO2 and PSN is 1:4; when pyrolysis temperature is at 800-1200℃, amorphous SiO2/SiCN core-shell ceramic microspheres are prepared; at 1400℃, the amorphous phase partially crystallizes to produce SiO2, SiC and Si3N4 phase.

  10. The Effect of Si Morphology on Machinability of Al-Si Alloys

    Directory of Open Access Journals (Sweden)

    Muhammet Uludağ

    2015-12-01

    Full Text Available Many of the cast parts require some sort of machining like milling, drilling to be used as a finished product. In order to improve the wear properties of Al alloys, Si is added. The solubility of Si in Al is quite low and it has a crystallite type structure. It behaves as particulate metal matrix composite which makes it an attractive element. Thus, the wear and machinability properties of these type of alloys depend on the morphology of Si in the matrix. In this work, Sr was added to alter the morphology of Si in Al-7Si and Al-12Si. Cylindrical shaped samples were cast and machinability characteristics of Sr addition was studied. The relationship between microstructure and machinability was evaluated.

  11. Comparative study of anisotropic superconductivity in CaAlSi and CaGaSi

    International Nuclear Information System (INIS)

    Tamegai, T.; Uozato, K.; Kasahara, S.; Nakagawa, T.; Tokunaga, M.

    2005-01-01

    In order to get some insight into the origin of the anomalous angular dependence of H c2 in a layered intermetallic compound CaAlSi, electronic, superconducting, and structural properties are compared between CaAlSi and CaGaSi. The angular dependence of H c2 in CaGaSi is well described by the anisotropic GL model. Parallel to this finding, the pronounced lattice modulation accompanying the superstructure along the c-axis in CaAlSi is absent in CaGaSi. A relatively large specific heat jump at the superconducting transition in CaAlSi compared with CaGaSi indicates the presence of strong electron-phonon coupling in CaAlSi, which may cause the superstructure and the anomalous angular dependence of H c2

  12. Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

    Science.gov (United States)

    Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

  13. Improved thermal stability and hole mobilities in a strained-Si/strained-Si1-yGe y/strained-Si heterostructure grown on a relaxed Si1-xGe x buffer

    International Nuclear Information System (INIS)

    Gupta, Saurabh; Lee, Minjoo L.; Isaacson, David M.; Fitzgerald, Eugene A.

    2005-01-01

    A dual channel heterostructure consisting of strained-Si/strained-Si 1-y Ge y on relaxed Si 1-x Ge x (y > x), provides a platform for fabricating metal-oxide-semiconductor field-effect transistors (MOSFETs) with high hole mobilities (μ eff ) which depend directly on Ge concentration and strain in the strained-Si 1-y Ge y layer. Ge out-diffuses from the strained-Si 1-y Ge y layer into relaxed Si 1-x Ge x during high temperature processing, reducing peak Ge concentration and strain in the strained-Si 1-y Ge y layer and degrades hole μ eff in these dual channel heterostructures. A heterostructure consisting of strained-Si/strained-Si 1-y Ge y /strained-Si, referred to as a trilayer heterostructure, grown on relaxed Si 1-x Ge x has much reduced Ge out-flux from the strained-Si 1-y Ge y layer and retains higher μ eff after thermal processing. Improved hole μ eff over similar dual channel heterostructures is also observed in this heterostructure. This could be a result of preventing the hole wavefunction tunneling into the low μ eff relaxed Si 1-x Ge x layer due to the additional valence band offset provided by the underlying strained-Si layer. A diffusion coefficient has been formulated and implemented in a finite difference scheme for predicting the thermal budget of the strained SiGe heterostructures. It shows that the trilayer heterostructures have superior thermal budgets at higher Ge concentrations. Ring-shaped MOSFETs were fabricated on both platforms and subjected to various processing temperatures in order to compare the extent of μ eff reduction with thermal budget. Hole μ eff enhancements are retained to a much higher extent in a trilayer heterostructure after high temperature processing as compared to a dual channel heterostructure. The improved thermal stability and hole μ eff of a trilayer heterostructure makes it an ideal platform for fabricating high μ eff MOSFETs that can be processed over higher temperatures without significant losses in hole

  14. Rod-like β-FeSi2 phase grown on Si (111) substrate

    International Nuclear Information System (INIS)

    Han Ming; Tanaka, Miyoko; Takeguchi, Masaki; Furuya, Kazuo

    2004-01-01

    Pure Fe with coverage of 0.5-2.0 nm was deposited on Si (111) 7x7 surfaces by reactive deposition epitaxy (RDE) in an integrated ultrahigh vacuum (UHV) system. Transmission electron microscopy (TEM) confirmed that the as-deposited epitaxial phase exhibits rod-like and equilateral triangular morphology. The as-deposited phase was identified as c-FeSi 2 by electron diffraction and high-resolution transmission electron microscopy. It was found that there exists lattice distortion in epitaxial c-FeSi 2 phase. Upon annealing at 1073 K, the metastable c-FeSi 2 transforms into equilibrium β-FeSi 2 phase, the latter inherits completely the morphology of c-FeSi 2 phase. Based on RDE and subsequent annealing, a new fabrication technique to grow rod-like semiconducting β-FeSi 2 on a Si substrate has been proposed in the present work

  15. CIUDADANÍA FISCAL Y NUEVAS FORMAS DE RELACIÓN ENTRE CONTRIBUYENTES Y ADMINISTRACIÓN TRIBUTARIA

    Directory of Open Access Journals (Sweden)

    Alejandro M. Estévez

    2009-01-01

    Full Text Available Usualmente, el cumplimiento fiscal ha sido explicado por el riesgo de la coerción. Este artículo analiza la nueva orientación de las administraciones tributarias, a fin de comprender cómo este hecho puede alentar la cultura tributaria de las sociedades, a través de la autorregulación y el cumplimiento voluntario. Aunque la mejora de la relación entre administración tributaria y el contribuyente no asegura en su totalidad, ni es la única manera para lograr el cumplimiento tributario, si constituye un factor determinante para aumentar la voluntad de cooperación de cada contribuyente y su intención en colaborar con su esfuerzo individual al sostenimiento de una sociedad general.

  16. RELACIÓN ENTRE LA CONFIANZA Y EL COMPROMISO GENERADOS EN UN ACUERDO COOPERATIVO Y LOS MOTIVOS PARA SU FORMACIÓN

    Directory of Open Access Journals (Sweden)

    Sánchez de Pablo González del Campo, J.D

    2010-01-01

    Full Text Available La literatura sobre cooperación empresarial hace especial énfasis en diversos factores claves de éxito. Nos centraremos en dos de los que poseen mayor componente social, como son la confianza y el compromiso, con el objetivo de evaluar si ambas variables presentan diferencias significativas entre los diversos motivos que llevan a las empresas a cooperar. Si éstas se produjeran tendría importantes repercusiones para la gestión empresarial, ya que el directivo tendría más información en el proceso de toma de decisiones, al identificar motivos para cooperar que tienen asociado mayor nivel de dichos factores claves de éxito. Además, aplicamos el estudio empírico al sector agroalimentario español, porque consideramos que existe escasez de investigación sobre cooperación en los sectores maduros de baja intensidad tecnológica.

  17. Violencia contra mujeres embarazadas entre las usuarias del Instituto Mexicano del Seguro Social: un estudio sobre determinantes, prevalencia y severidad

    Directory of Open Access Journals (Sweden)

    Roberto Castro

    2002-01-01

    Full Text Available Se presentan los resultados de una encuesta entre 446 mujeres usuarias de los servicios de salud del Instituto Mexicano del Seguro Social (IMSS en Morelos, que se encontraban en su tercer trimestre de embarazo. El objetivo era indagar si la violencia contra mujeres se incrementa durante el embarazo o si, por el contrario, disminuye. Se encontró que la prevalencia no varió en ambos periodos (aproximadamente 15 por ciento, en general. En cambio, la severidad de la violencia emocional se incrementó durante el embarazo, mientras que la de la violencia física y sexual se mantuvo constante. Un análisis de regresión logística mostró que las variables que mejor predicen la violencia durante el embarazo son el número de hijos, el consumo de alcohol por parte de la pareja, la historia de violencia en la infancia de la pareja y la existencia de violencia durante el año previo al embarazo.

  18. La réaction des pays d'Islam face aux Croisades et aux États latins, fin du XIe - milieu du XIIIe siècle

    OpenAIRE

    Van Renterghem , Vanessa

    2000-01-01

    Cet article, rédigé à l'occasion de la question d'agrégation d'histoire portant sur " Les relations entre les pays d'Islam et le monde latin du milieu du Xe au milieu du XIIIe siècle " (2000-2002), examine différents aspects des relations entre Croisés et musulmans, vues des pays d'Islam. Il s'intéresse tout d'abord à l'évolution de l'image des Croisés dans les sources arabes de l'époque ainsi qu'au sort des musulmans sous domination franque. Il retrace ensuite les différentes étapes de la ré...

  19. Afectividad como mediador de la relación entre optimismo y calidad de vida en hombres que tienen sexo con hombres con VIH

    Directory of Open Access Journals (Sweden)

    Pablo Vera-Villarroel

    2016-01-01

    Full Text Available Antecedente/Objetivos : El aumento de la esperanza de vida ha hecho de la calidad de vida (CV el objetivo fundamental en el cuidado de pacientes crónicos y en personas que viven con VIH. Se ha encontrado evidencia del vínculo entre optimismo, calidad de vida y bienestar. El propósito del presente estudio fue determinar si la afectividad en sus dos dimensiones (positiva y negativa desempeña un rol mediador en la asociación entre op - timismo y calidad de vida en hombres viviendo con VIH que tienen sexo con hombres. Método : Ciento dieciséis hombres con VIH (edad promedio de 36,8 años; DT = 9,06; tiem - po medio desde el diagnóstico de 8,2 años contestaron tres instrumentos: Life Orientation Test Revised Version (LOT-R, Positive and Negative Affect Schedule (PANAS y World Health Organization Quality of Life-Bref (WHOQoL-Bref. Resultados : Los resultados mostraron que el afecto positivo no tuvo efecto mediador, mientras el afecto negativo medió la relación entre optimismo y dos dimensiones de la calidad de vida (calidad de vida general y ambiente. Conclusiones : Se encontró que el afecto negativo participa parcialmente como una variable mediadora entre el optimismo y calidad de vida.

  20. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  1. Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

    International Nuclear Information System (INIS)

    Hartmann, J.M.; Andrieu, F.; Lafond, D.; Ernst, T.; Bogumilowicz, Y.; Delaye, V.; Weber, O.; Rouchon, D.; Papon, A.M.; Cherkashin, N.

    2008-01-01

    We have first of all quantified the impact of pressure on Si and SiGe growth kinetics. Definite growth rate and Ge concentration increases with the pressure have been evidenced at low temperatures (650-750 deg. C). By contrast, the high temperature (950-1050 deg. C) Si growth rate either increases or decreases with pressure (gaseous precursor depending). We have then described the selective epitaxial growth process we use to form Si or Si 0.7 Ge 0.3 :B raised sources and drains on ultra-thin patterned Silicon-On-Insulator (SOI) substrates. We have afterwards presented the specifics of SiGe virtual substrates and of the tensile-strained Si layers grown on top (used as templates for the elaboration of tensily strained-SOI wafers). The tensile strain, which can be tailored from 1.3 up to 3 GPa, leads to an electron mobility gain by a factor of 2 in n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) built on top. High Ge content SiGe virtual substrates can also be used for the elaboration of compressively strained Ge channels, with impressive hole mobility gains (x9) compared to bulk Si. After that, we have described the main structural features of thick Ge layers grown directly on Si (that can be used as donor wafers for the elaboration of GeOI wafers or as the active medium of near infrared photo-detectors). Finally, we have shown how Si/SiGe multilayers can be used for the formation of high performance 3D devices such as multi-bridge channel or nano-beam gate-all-around FETs, the SiGe sacrificial layers being removed thanks to plasma dry etching, wet etching or in situ gaseous HCl etching

  2. Si/SiC heterojunction optically controlled transistor with charge compensation layer

    Directory of Open Access Journals (Sweden)

    Pu Hongbin

    2016-01-01

    Full Text Available A novel n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has been studied in the paper. The performance of the device is simulated using Silvaco Atlas tools, which indicates excellent performances of the device in both blocking state and conducting state. The device also has a good switching characteristic with 0.54μs as rising time and 0.66μs as falling time. With the charge compensation layer, the breakdown voltage and the spectral response intensity of the device are improved by 90V and 33A/W respectively. Compared with optically controlled transistor without charge compensation layer, the n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has a better performance.

  3. Characterization of SiC–SiC composites for accident tolerant fuel cladding

    Energy Technology Data Exchange (ETDEWEB)

    Deck, C.P., E-mail: Christian.Deck@ga.com; Jacobsen, G.M.; Sheeder, J.; Gutierrez, O.; Zhang, J.; Stone, J.; Khalifa, H.E.; Back, C.A.

    2015-11-15

    Silicon carbide (SiC) is being investigated for accident tolerant fuel cladding applications due to its high temperature strength, exceptional stability under irradiation, and reduced oxidation compared to Zircaloy under accident conditions. An engineered cladding design combining monolithic SiC and SiC–SiC composite layers could offer a tough, hermetic structure to provide improved performance and safety, with a failure rate comparable to current Zircaloy cladding. Modeling and design efforts require a thorough understanding of the properties and structure of SiC-based cladding. Furthermore, both fabrication and characterization of long, thin-walled SiC–SiC tubes to meet application requirements are challenging. In this work, mechanical and thermal properties of unirradiated, as-fabricated SiC-based cladding structures were measured, and permeability and dimensional control were assessed. In order to account for the tubular geometry of the cladding designs, development and modification of several characterization methods were required.

  4. EFFECT OF THE Si POWDER ADDITIONS ON THE PROPERTIES OF SiC COMPOSITES

    Directory of Open Access Journals (Sweden)

    GUOGANG XU

    2012-09-01

    Full Text Available By means of transient plastic phase process, the SiC silicon carbide kiln furniture materials were produced through adding Si powder to SiC materials. At the condition of the same additions of SiO2 powder, the effect of the Si powder additions on properties of silicon carbide materials after sintered at 1450°C for 3 h in air atmosphere was studied by means of SEM and other analysis methods. The results showed that silicon powder contributes to both sintering by liquid state and plastic phase combination to improve the strength of samples. When the Si powder additions is lower than 3.5 %, the density and strength of samples increase and porosity decrease with increasing Si powder additions. However when the Si powder additions is higher than 3.5 %, the density and strength of samples decrease and porosity increase with increasing Si powder additions. With increasing of Si additions, the residual strength of sample after thermal shocked increased and linear change rate decreased, and get to boundary value when Si additions is 4.5 %. The results also indicated that at the same sintering temperature, the sample with 3.5 % silicon powder has maximum strength.

  5. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    International Nuclear Information System (INIS)

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  6. Consumo de alcohol en mujeres embarazadas atendidas en el Hospital Civil de Guadalajara Dr. Juan I. Menchaca, entre 1991 y 1998

    Directory of Open Access Journals (Sweden)

    Jeanette Peña

    2010-01-01

    Full Text Available Si bien los efectos teratogénicos del alcohol fueron descritos desde hace más de 40 años, muchas mujeres en el mundo continúan consumiendo alcohol durante el embarazo. Se realizó un análisis de archivo en el Hospital Civil de Guadalajara Dr. Juan I. Menchaca a fin de conocer el porcentaje de mujeres que reportaron consumir alcohol durante el embarazo entre 1991 y 1998, su asociación con el consumo de tabaco y drogas ilícitas, así como variaciones de acuerdo a la edad. Se encontró una prevalencia de 2.42% que se mantiene en los años analizados, el consumo más frecuente es el de alcohol asociado a tabaco y un efecto de la edad en los patrones de consumo donde la asociación alcohol- droga ilícita es más frecuente entre las mujeres más jóvenes.

  7. Relación entre nivel académico y metas de socialización en madres de niños preescolares

    Directory of Open Access Journals (Sweden)

    Jorge Mario Jaramillo Pérez

    2016-01-01

    Full Text Available En esta investigación se analizó cómo el nivel académico de madres de niños en edad preescolar se relaciona con sus metas de socialización. Utilizando una metodología mixta se aplicaron entrevistas semiestructuradas a 172 madres de niños entre 3 y 4 años y medio de edad que viven en Bogotá y varios municipios de la zona cundiboyacense. Las entrevistas fueron sometidas a análisis de contenido de tipo categorial para calcular la frecuencia con que se mencionaron distintas metas de socialización y examinar si hubo una relación significativa entre el nivel de formación académica de las madres y su preferencia por metas de socialización asociadas a la independencia o la interdependencia. Los resultados indican que a mayor nivel académico, mayor es el énfasis en metas de socialización asociadas a la independencia.

  8. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

    International Nuclear Information System (INIS)

    Varzgar, John B.; Kanoun, Mehdi; Uppal, Suresh; Chattopadhyay, Sanatan; Tsang, Yuk Lun; Escobedo-Cousins, Enrique; Olsen, Sarah H.; O'Neill, Anthony; Hellstroem, Per-Erik; Edholm, Jonas; Ostling, Mikael; Lyutovich, Klara; Oehme, Michael; Kasper, Erich

    2006-01-01

    The reliability of gate oxides on bulk Si and strained Si (s-Si) has been evaluated using constant voltage stressing (CVS) to investigate their breakdown characteristics. The s-Si architectures exhibit a shorter life time compared to that of bulk Si, which is attributed to higher bulk oxide charges (Q ox ) and increased surface roughness in the s-Si structures. The gate oxide in the s-Si structure exhibits a hard breakdown (HBD) at 1.9 x 10 4 s, whereas HBD is not observed in bulk Si up to a measurement period of 1.44 x 10 5 s. The shorter lifetime of the s-Si gate oxide is attributed to a larger injected charge (Q inj ) compared to Q inj in bulk Si. Current-voltage (I-V) measurements for bulk Si samples at different stress intervals show an increase in stress induced leakage current (SILC) of two orders in the low voltage regime from zero stress time to up to 5 x 10 4 s. In contrast, superior performance enhancements in terms of drain current, maximum transconductance and effective channel mobility are observed in s-Si MOSFET devices compared to bulk Si. The results from this study indicate that further improvement in gate oxide reliability is needed to exploit the sustained performance enhancement of s-Si devices over bulk Si

  9. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    International Nuclear Information System (INIS)

    Jeon, Bup Ju; Lee, Joong Kee

    2014-01-01

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH 4 /SiH 4 mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH 4 and SiH 4 precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium

  10. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Bup Ju [Department of Energy Resources, Shinhan University, 233-1, Sangpae-dong, Dongducheon, Gyeonggi-do, 483-777 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Advanced Energy Materials Processing Laboratory, Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

    2014-03-25

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH{sub 4}/SiH{sub 4} mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH{sub 4} and SiH{sub 4} precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium.

  11. Synthesis of SiC decorated carbonaceous nanorods and its hierarchical composites Si@SiC@C for high-performance lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chundong [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Ostrikov, Kostya [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4000 (Australia); Plasma Nanoscience, Industrial Innovation Program, CSIRO Manufacturing Flagship, Lindfield, New South Wales 2070 (Australia); Yang, Yonggang [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Wenjun, E-mail: apwjzh@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China)

    2015-10-15

    SiC- based nanomaterials possess superior electric, thermal and mechanical properties. However, due to the tricky synthesis process, which needs to be carried out under high temperature with multi-step reaction procedures, the further application is dramatically limited. Herein, a simple as well as a controllable approach is proposed for synthesis of SiC- based nanostructures under low temperature. Phenyl-bridged polysilsesquioxane was chosen as the starting material to react with magnesium at 650 °C, following which SiC@C nanocomposites were finally obtained, and it maintains the original bent rod-like architecture of polysilsesquioxanes. The possible formation process for the nanocomposites can proposed as well. The electrochemical behaviour of nanocomposites was accessed, verifying that the synthesized SiC@C nanocomposites deliver good electrochemical performance. Moreover, SiC@C also shows to be a promising scaffold in supporting Si thin film electrode in achieving stable cycling performance in lithium ion batteries. - Highlights: • SiC@C bent nanorods were synthesized with a magnesium reaction approach. • Carbon nanorod spines studded with ultrafine β-SiC nanocrystallines was realized. • The synthesized SiC@C keeps the original rod-like structure of polysilsesquioxanes. • The possible formation process for the nanocomposites was analysed and proposed. • Si@SiC@C nanocomposites reveal good electrochemical performance in LIBs.

  12. Progress in blanket designs using SiCf/SiC composites

    International Nuclear Information System (INIS)

    Giancarli, L.; Golfier, H.; Nishio, S.; Raffray, R.; Wong, C.; Yamada, R.

    2002-01-01

    This paper summarizes the most recent design activities concerning the use of SiC f /SiC composite as structural material for fusion power reactor breeding blanket. Several studies have been performed in the past. The most recent proposals are the TAURO blanket concept in the European Union, the ARIES-AT concept in the US, and DREAM concept in Japan. The first two concepts are self-cooled lithium-lead blankets, while DREAM is an helium-cooled beryllium/ceramic blanket. Both TAURO and ARIES-AT blankets are essentially formed by a SiC f /SiC box acting as a container for the lithium-lead which has the simultaneous functions of coolant, tritium breeder, neutron multiplier and, finally, tritium carrier. The DREAM blanket is characterized by small modules using pebble beds of Be as neutron multiplier material, of Li 2 O (or other lithium ceramics) as breeder material and of SiC as shielding material. The He coolant path includes a flow through the pebble beds and a porous partition wall. For each blanket, this paper describes the main design features and performances, the most recent design improvements, and the proposed manufacturing routes in order to identify specific issues and requirements for the future R and D on SiC f /SiC

  13. Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

    Energy Technology Data Exchange (ETDEWEB)

    Bantaculo, Rolando, E-mail: rolandobantaculo@yahoo.com; Saitoh, Eiji; Miyamoto, Yu; Handa, Hiroyuki; Suemitsu, Maki

    2011-11-01

    A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH{sub 3}-CH{sub 3}) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si{sub 2}H{sub 6}) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.

  14. Magnetic ordering of YPd{sub 2}Si-type HoNi{sub 2}Si and ErNi{sub 2}Si compounds

    Energy Technology Data Exchange (ETDEWEB)

    Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru [Department of Chemistry, Moscow State University, Leninskie Gory, House 1, Building 3, GSP-2, Moscow, 119992 (Russian Federation); Isnard, O. [CNRS, Insitut. Néel, 25 Rue Des Martyrs BP166 x, F-38042 Grenoble (France); Université Grenoble Alpes, Inst. Néel, F-38042 Grenoble (France); Nirmala, R. [Indian Institute of Technology Madras, Chennai 600 036 (India); Quezado, S.; Malik, S.K. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, Natal 59082-970 (Brazil)

    2016-12-01

    Magnetic properties of YPd{sub 2}Si-type HoNi{sub 2}Si and ErNi{sub 2}Si were investigated via neutron diffraction and magnetisation measurements. HoNi{sub 2}Si and ErNi{sub 2}Si show ferromagnetic-like ordering at T{sub C} of 9 K and 7 K, respectively. The paramagnetic Weiss temperatures are 9 K and 11 K and the effective magnetic moments are 10.76 μ{sub B}/fu and 9.79 μ{sub B}/fu for HoNi{sub 2}Si and ErNi{sub 2}Si compounds, respectively. The HoNi{sub 2}Si and ErNi{sub 2}Si are soft ferromagnets with saturation magnetization of 8.1 μ{sub B}/fu and 7.5 μ{sub B}/fu, respectively at 2 K and in field of 140 kOe. The isothermal magnetic entropy change, ΔS{sub m}, has a maximum value of −15.6 J/kg·K at 10 K for HoNi{sub 2}Si and −13.9 J/kg·K at 6 K for ErNi{sub 2}Si for a field change of 50 kOe. Neutron diffraction study in zero applied field shows mixed ferromagnetic-antiferromagnetic ordering of HoNi{sub 2}Si at ~9 K and its magnetic structure is a sum of a-axis ferromagnetic F{sub a}, b-axis antiferromagnetic AF{sub b} and c-axis antiferrromagnetic AF{sub c} components of Pn′a2{sub 1}′={1, m_x′/[1/2, 1/2, 1/2], 2_y′/[0, 1/2, 0], m_z/[1/2, 0, 1/2]} magnetic space group and propagation vector K{sub 0}=[0, 0, 0]. The holmium magnetic moment reaches a value of 9.23(9) μ{sub B} at 1.5 K and the unit cell of HoNi{sub 2}Si undergoes isotropic contraction around the temperature of magnetic transition. - Graphical abstract: HoNi{sub 2}Si: mixed ferro-antiferromagnet (F{sub a}+AF{sub b}+AF{sub c}){sup K0} with Pn′a2{sub 1}′ magnetic space group and K{sub 0}=[0, 0, 0] propagation vector below 10 K. - Highlights: • Ferro-antiferromagnetic ordering is observed in HoNi{sub 2}Si at 9 K and in ErNi{sub 2}Si at 7 K. • HoNi{sub 2}Si is soft ferromagnet with ΔS{sub m} of −15.6 J/kg·K at 10 K in field of 0–50 kOe. • ErNi{sub 2}Si is soft ferromagnet with ΔS{sub m} of −13.9 J/kg·K at 6 K in field of 0–50 kOe. • HoNi{sub 2}Si shows mixed F

  15. Compósitos SiCf /SiC utilizados em sistemas de proteção térmica SiCf /SiC composites for thermal protection systems

    Directory of Open Access Journals (Sweden)

    M. Florian

    2005-09-01

    Full Text Available Compósitos de carbeto de silício (SiC reforçado com fibras de carbeto de silício (SiCf são materiais candidatos em potencial para utilização em sistemas de proteção térmica em altas temperaturas devido principalmente à boa condutividade térmica na direção da fibra e muito baixa condutividade térmica na direção transversal à fibra, alta dureza, estabilidade térmica e à corrosão por oxidação. O compósito SiCf/SiC possui uma matriz de SiC reforçada com fibras contínuas policristalinas de SiC e é obtido por reações de conversão em altas temperaturas e atmosfera controlada, utilizando o compósito carbono/carbono como precursor. O processo de Reação Química em Vapor (CVR foi utilizado para a fabricação de compósitos SiCf/SiC com alta pureza na fase de SiC-beta. O compósito precursor de carbono/carbono foi fabricado com fibra de carbono não estabilizada e matriz carbonosa derivada da resina fenólica na forma de carbono isotrópico. O compósito convertido exibiu uma densidade de 1,75 g/cm³, com 40% de porosidade aberta e resistência à flexão de 80 MPa medida por ensaio flexão em 4 pontos. A área especifica medida pela técnica de BET é dependente da temperatura de conversão e das condições inicias do precursor de carbono, podendo chegar a 18 m²/g.Composites based on silicon carbide are potential candidate materials for thermal protection systems mainly due to its good thermal conductivity in fiber direction and very low transversal thermal conductivity, high hardness, corrosion and thermal resistance. SiCf/SiC composite presents a SiC matrix reinforced with SiC polycrystalline continuous fibers. The composite was obtained by conversion reactions at high temperature and controlled atmosphere from a carbon/carbon composite precursor. The CVR process was used to fabricate SiC /SiC composite with crystalline high-purity beta-SiC from a carbon-carbon precursor fabricated with non-stabilized carbon fiber and

  16. The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

    International Nuclear Information System (INIS)

    Chang Jian-Guang; Wu Chun-Bo; Ji Xiao-Li; Ma Hao-Wen; Yan Feng; Shi Yi; Zhang Rong

    2012-01-01

    We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process. It is found that with the conventional Ni silicide method, the leakage current of a p + (SiGe)—n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film. In addition, the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film. As a result, the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology. (cross-disciplinary physics and related areas of science and technology)

  17. Narrow photoluminescence peak from Ge(Si) islands embedded between tensile-strained Si layers

    Energy Technology Data Exchange (ETDEWEB)

    Shaleev, Mikhail; Novikov, Alexey; Baydakova, Nataliya; Yablonskiy, Artem; Drozdov, Yuriy; Lobanov, Dmitriy; Krasilnik, Zakhary [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Kuznetsov, Oleg [Physical-Technical Research Institute, Nizhny Novgorod State University, pr. Gagarina 23, 603950 Nizhny Novgorod (Russian Federation)

    2011-03-15

    The influence of thickness of the strained Si layers, measurement temperature and optical pumping power on width of the photoluminescence line from Ge(Si) self-assembled nanoislands grown on relaxed SiGe/Si(001) buffer layers and embedded between tensile-stained Si layers was studied. This line appears due to the II-type optical transition between the holes localized in islands and the electrons confined in tensile-strained Si layers under and above the islands. The possibility of tuning the photoluminescence line width by changing the strained Si layer thicknesses under and above the islands is showed. The decrease of the photoluminescence line width from Ge(Si) islands down to values comparable with width of the PL line from InAs/GaAs quantum dots was achieved due to the quantum confinement of electrons in thin strained Si layers and taking into account of the higher diffusion-induced smearing of strained Si layer above the islands. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. The structure modification of Si-SiO2 irradiated by Fe+ ion

    International Nuclear Information System (INIS)

    Jin Tao; Ma Zhongquan; Guo Qi

    1992-01-01

    The effect of the iron ion implantation on the oxide surface and SiO 2 -Si interface of MOS structure was studied by X-ray photo-electron spectroscopy (XPS), and the chemical states of compounds formed were examined. The results obtained show that in the surface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface thickness is almost doubled that leads to failure of MOS capacitors. The physical and chemical mechanisms of MOS structure change by Fe + ion implantation are also discussed and analyzed

  19. Electroplating chromium on CVD SiC and SiCf-SiC advanced cladding via PyC compatibility coating

    Science.gov (United States)

    Ang, Caen; Kemery, Craig; Katoh, Yutai

    2018-05-01

    Electroplating Cr on SiC using a pyrolytic carbon (PyC) bond coat is demonstrated as an innovative concept for coating of advanced fuel cladding. The quantification of coating stress, SEM morphology, XRD phase analysis, and debonding test of the coating on CVD SiC and SiCf-SiC is shown. The residual tensile stress (by ASTM B975) of electroplated Cr is > 1 GPa prior to stress relaxation by microcracking. The stress can remove the PyC/Cr layer from SiC. Surface etching of ∼20 μm and roughening to Ra > 2 μm (by SEM observation) was necessary for successful adhesion. The debonding strength (by ASTM D4541) of the coating on SiC slightly improved from 3.6 ± 1.4 MPa to 5.9 ± 0.8 MPa after surface etching or machining. However, this improvement is limited due to the absence of an interphase, and integrated CVI processing may be required for further advancement.

  20. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng Lin; Huang, Ming Yi; Wang, Deli; He, Jr-Hau

    2015-01-01

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages

  1. Luminescence of solar cells with a-Si:H/c-Si heterojunctions

    Science.gov (United States)

    Zhigunov, D. M.; Il'in, A. S.; Forsh, P. A.; Bobyl', A. V.; Verbitskii, V. N.; Terukov, E. I.; Kashkarov, P. K.

    2017-05-01

    We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

  2. (E-2-Nonenal determination in brazilian beers using headspace solid-phase microextraction and gas chromatographic coupled mass spectrometry (HS-SPME-GC-MS Determinação de (E-2-nonenal em cervejas brasileiras utilizando microextração em fase sólida do headspace e cromatografia gasosa acoplada a espectrometria de massas

    Directory of Open Access Journals (Sweden)

    Rodrigo Scherer

    2010-05-01

    Full Text Available (E-2-nonenal is considered an important off-flavor of beer, related to the flavor of beer staling. In this study, a new method for determination of (E-2-nonenal in beer using headspace solid-phase microextraction and gas chromatographic coupled mass spectrometry (HS-SPME-GC-MS was developed and applied in Brazilian beer samples. The extractions were carried out in CAR-PDMS (carboxen-polydimethylsiloxane fiber and the best results were found with 15 minutes of equilibrium and 90 minutes of extraction at 50 °C. The method was linear in the range from 0.02 to 4.0 μg.L-1 with correlation coefficient of 0.9994. The limits of detection and quantification were 0.01 and 0.02 μg.L-1, respectively. 96.5% of recovery and 4% precision (RSD were obtained in the fortification of beer samples with 2.0 μg.L-1 of (E-2-nonenal. The developed method proved to be simple, efficient and highly sensitive to the determination of this analyte being easily applied in the quality control of the brewery. (E-2-nonenal was found in all beer samples analyzed with levels between 0.17 and 0.42 μg.L-1.O (E-2-nonenal é considerado um importante off-flavor da cerveja, sendo relacionado ao sabor de cerveja envelhecida. Neste estudo, um novo método para determinação de (E-2-nonenal em cerveja usando microextração em fase sólida do headspace e cromatografia a gás acoplada à espectrometria de massa (HS-SPME-GC-MS foi desenvolvido e aplicado em amostras de cerveja brasileira. As extrações foram realizadas utilizando a fibra CAR/PDMS (carboxen/polidimetilsiloxano, com 15 minutos de tempo de equilíbrio e 90 minutos de exposição da fibra a 50 °C. O método foi linear na faixa de 0,02 e 4,0 μg.L-1, com coeficiente de correlação de 0,9994. Os limites de detecção e quantificação foram 0,01 e 0,02 μg.L-1, respectivamente. Foram obtidos 96,5% de recuperação e 4% de variação entre replicatas de amostras de cerveja fortificadas com 2,0 μg.L-1 de (E-2-nonenal. O m

  3. Thermogravimetric and microscopic analysis of SiC/SiC materials with advanced interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Windisch, C.F. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Snead, L.L. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The chemical stability of SiC/SiC composites with fiber/matrix interfaces consisting of multilayers of SiC/SiC and porous SiC have been evaluated using a thermal gravimetric analyzer (TGA). Previous evaluations of SiC/SiC composites with carbon interfacial layers demonstrated the layers are not chemically stable at goal use temperatures of 800-1100{degrees}C and O{sub 2} concentrations greater than about 1 ppm. No measureable mass change was observed for multilayer and porous SiC interfaces at 800-1100{degrees}C and O{sub 2} concentrations of 100 ppm to air; however, the total amount of oxidizable carbon is on the order of the sensitivity of the TGA. Further studies are in progress to evaluate the stability of these materials.

  4. Fermi surfaces of YRu2Si2 and LaRu2Si2

    International Nuclear Information System (INIS)

    Settai, R.; Ikezawa, H.; Toshima, H.; Takashita, M.; Ebihara, T.; Sugawara, H.; Kimura, T.; Motoki, K.; Onuki, Y.

    1995-01-01

    We have measured the de Haas-van Alphen effect of YRu 2 Si 2 and LaRu 2 Si 2 to clarify the Fermi surfaces and cyclotron masses. Main hole-Fermi surfaces of both compounds with a distorted ellipsoid shape are similar, occupying about half of the Brillouin zone. The small hole-Fermi surfaces with the shape of a rugby ball are three in number for LaRu 2 Si 2 , and one for YRu 2 Si 2 . An electron-Fermi surface consists of a doughnut like shape for LaRu 2 Si 2 , while a cylinder along the [001] direction and a multiply-connected shape exist for YRu 2 Si 2 . The cyclotron masses of YRu 2 Si 2 are a little larger than those of LaRu 2 Si 2 . ((orig.))

  5. Thickness dependent formation and properties of GdSi2/Si(100) interfaces

    International Nuclear Information System (INIS)

    Peto, G.; Molnar, G.; Dozsa, L.; Horvath, Z.E.; Horvath, Zs.J.; Zsoldos, E.; Dimitriadis, C.A.; Papadimitriou, L.

    2005-01-01

    Epitaxial and polycrystalline orthorhombic GdSi 2 films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film. The most important property of these GdSi 2 /Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance-voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 10 10 cm -2 ), while the non-epitaxial growth induced defects of a much higher density (about 10 12 cm -2 ). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi 2 /Si interface. (orig.)

  6. On formation of silicon nanocrystals under annealing SiO2 layers implanted with Si ions

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.

    2002-01-01

    Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru

  7. Implantation of P ions in SiO2 layers with embedded Si nanocrystals

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I.

    2004-01-01

    The effect of 10 13 -10 16 cm -2 P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO 2 layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10 14 cm -2 , thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs

  8. Investigation into solubility and diffusion in SiC-NbC, SiC-TiC, SiC-ZrC systems

    International Nuclear Information System (INIS)

    Safaraliev, G.K.; Tairov, Yu.M.; Tsvetkov, V.F.; Shabanov, Sh.Sh.

    1991-01-01

    An investigation is carried out which demonstrates solid-phase interaction between SiC and NbC, TiC and ZrC monocrystals. The monocrystals are subjected to hot pressing in SiC powder with dispersity of 5x10 -6 m. The pressing temperature is 2270-2570 K and pressure is varied in the range of 20-40 MPa. Element composition and the distribution profile in a thin layer near the boundary of SiC-NbC, SiC-TiC and SiC-ZrC are investigated by the Anger spectroscopy method. The obtained results permit to make the conclusion in the possibility of solid solution formation in investigated systems

  9. ¿Chindia o China más India? : complementariedad y competencia económicas entre dos gigantes asiáticos

    OpenAIRE

    Bustelo Gómez, Pablo

    2010-01-01

    Este trabajo explora si las economías de China y de la India son y van a ser fundamentalmente complementarias (el escenario Chindia) o, por el contrario, esencialmente competitivas (el escenario China + India) entre ellas. En el primer caso, los efectos podrían ser un desplazamiento más rápido hacia Asia del centro de gravedad de la economía mundial y quizás la aparición de un nuevo tipo de globalización, alternativa basada en la hegemonía de Occidente. En el segundo, esos efectos se verían r...

  10. Materials and devices for quantum information processing in Si/SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sailer, Juergen

    2010-12-15

    In this thesis, we cover and discuss the complete way from material science, the fabrication of two-dimensional electron systems (2DES) in Si/SiGe heterostructures in molecular beam epitaxy (MBE), to quantum effects in few-electron devices based on these samples. We applied and compared two different approaches for the creation of pseudo-substrates that are as smooth, relaxed and defect free as possible. In the 'graded buffer' concept, starting from pure Si, the Ge content of the SiGe alloy is slowly and linearly increased until the desired Ge content is reached. In contrast, in the so-called 'low-temperature Si' concept, the SiGe alloy is deposited directly with the final Ge content, but onto a layer of highly defective Si. In terms of crystal defects, the 'graded buffer' turned out to be superior in comparison to the 'low-temperature Si' concept at the expense of a significantly higher material consumption. By continued optimization of the growth process, aiming at reducing the influence of the impurity, it nevertheless became possible to improve the charge carrier mobility from a mere 2000 cm{sup 2}/(Vs) to a record mobility exceeding 100 000 cm{sup 2}/(Vs). Within this work, we extended our MBE system with an electron beam evaporator for nuclear spin free {sup 28}Si. Together with the already existing effusion cell for {sup 70}Ge we were able to realize first 2DES in a nuclear spin free environment after successfully putting it to operation. The highest mobility 2DES in a nuclear spin free environment which have been realized in this thesis exhibited electron mobilities of up to 55 000 cm{sup 2}/(Vs). Quantum effects in Si/SiGe have been investigated in two- and zero-dimensional nanostructures. A remarkable phenomenon in the regime of the integer quantum Hall effect in Si/SiGe 2DES has been discovered and researched. For applications in quantum information processing and for the creation of qubits it is mandatory to

  11. Le Téméraire des Allemands : la perception de Charles le Téméraire dans l’espace allemand au XVe siècle

    OpenAIRE

    Dubray, Julien

    2017-01-01

    Nous chercherons dans ce travail à étudier la perception de Charles le Téméraire dans l’Empire à la fin du XV e siècle. Notre enquête se limitera aux régions de langue allemande. Pour ce faire, nous emploierons des sources diplomatiques, ainsi que des sources littéraires, tels que les poèmes et les lieder qui circulèrent du vivant du duc. Notre source principale consistera cependant en un corpus de chroniques réalisées entre la mort de Charles en 1477 et les premières années du XVI e siècle e...

  12. El perfil actual del personal catalogador: adecuación entre la formación universitaria y la demanda laboral

    Directory of Open Access Journals (Sweden)

    Ana Belén Ríos Hilario

    2011-10-01

    Full Text Available Se investiga la adecuación de los nuevos grados en Información y Documentación a las exigencias del mercado laboral, centrándonos en un perfil concreto de dichos estudios: la formación de los catalogadores. Para ello, en primer lugar se analizan las ofertas de empleo en dicha área atendiendo a las siguientes variables: titulación, experiencia, conocimientos generales, idiomas, lugar de localización y tipo de empleo. En segundo lugar, se procede a la redefinición de las competencias tanto para la catalogación formal como de contenido, y finalmente, para logar el objetivo del que partíamos, realizamos un cruce de datos entre las competencias definidas y los requisitos laborales especificados. Si bien es cierto que los resultados obtenidos demuestran una clara correspondencia entre las ofertas realizadas y las competencias establecidas, no debemos olvidar que desde estas últimas establecemos los objetivos de las materias y éstos deberán ir adaptándose a las nuevas demandas que exija el mercado.

  13. Structure and chemistry of passivated SiC/SiO{sub 2} interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Houston Dycus, J.; Xu, Weizong; LeBeau, James M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States); Lichtenwalner, Daniel J.; Hull, Brett; Palmour, John W. [Power Devices R& D, Wolfspeed, A Cree Company, Research Triangle Park, North Carolina 27709 (United States)

    2016-05-16

    Here, we report on the chemistry and structure of 4H-SiC/SiO{sub 2} interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO{sub 2} interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility.

  14. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Rongsheng, E-mail: rschen@ust.hk; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-08-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm{sup 2}/Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10{sup 6}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress.

  15. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, Dane F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  16. Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

    Directory of Open Access Journals (Sweden)

    Goloudina S.I.

    2017-01-01

    Full Text Available High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR spectroscopy, X-ray diffraction (XRD, Raman spectroscopy, transmission electon microscopy (TEM, transmission electron diffraction (TED, and scanning electron microscopy (SEM. XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111 substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111 film are aligned with four Si(111 planes at the SiC/Si interface. It was shown the SiC films (35 nm grown on Si(111 at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm were formed on Si (100 substrate at the same temperature. It was shown the SiC films (30-35 nm are able to cover the voids in Si substrate with size up to 10 μm.

  17. Purity and radioactive decay behaviour of industrial 2D-reinforced SiCf/SiC composites

    International Nuclear Information System (INIS)

    Scholz, H.W.; Zucchetti, M.; Casteleyn, K.; Adelhelm, C.

    1994-01-01

    Ceramic matrix composites based on SiC with continuous fibres (SiC f /SiC) are considered promising structural materials for future fusion devices. It was still to clarify, whether impurities in industrial SiC f /SiC could jeopardise radiological advantages. Experimental impurity analyses revealed a two-dimensionally reinforced SiC f /SiC with the matrix produced by CVI as very pure. Chemo-spectrometric methods were combined with radioactivation methods (CPAA, NAA). A quantification of the main constituents Si, C and O was added. Calculations with the FISPACT-2.4 code and EAF-2 library identified elements detrimental for different low-activation criteria. For the neutron exposure, EEF reactor-study first wall and blanket conditions were simulated. The calculated SiC f /SiC included 48 trace elements. Even under conservative assumptions, all low-activation limits of European interest are fulfilled. Exclusively the hands-on recycling limit for the First Wall can intrinsically not be satisfied with SiC. The theoretical goal of a SiC f /SiC depleted of 28 Si (isotopic tailoring) is critically discussed. ((orig.))

  18. Transformation of sludge Si to nano-Si/SiOx structure by oxygen inward diffusion as precursor for high performance anodes in lithium ion batteries

    Science.gov (United States)

    Hua, Qiqi; Dai, Dongyang; Zhang, Chengzhi; Han, Fei; Lv, Tiezheng; Li, Xiaoshan; Wang, Shijie; Zhu, Rui; Liao, Haojie; Zhang, Shiguo

    2018-05-01

    Although several Si/C composite structures have been proposed for high-performance lithium-ion batteries (LIBs), they have still suffered from expensive and complex processes of nano-Si production. Herein, a simple, controllable oxygen inward diffusion was utilized to transform Si sludge obtained from the photovoltaic (PV) industry into the nano-Si/SiOx structure as a result of the high diffusion efficiency of O inside Si and high surface area of the sludge. After further process, a yolk/shell Si/C structure was obtained as an anode material for LIBs. This composite demonstrated an excellent cycling stability, with a high reversible capacity (˜ 1250 mAh/g for 500 cycles), by void space originally left by the SiOx accommodate inner Si expansion. We believe this is a rather simple way to convert the waste Si into a valuable nano-Si for LIB applications.

  19. Carrier recombination in tailored multilayer Si/Si{sub 1−x}Ge{sub x} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Mala, S.A. [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Tsybeskov, L., E-mail: tsybesko@njit.edu [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Lockwood, D.J.; Wu, X.; Baribeau, J.-M. [National Research Council, Ottawa, ON, Canada KIA 0R6 (Canada)

    2014-11-15

    Photoluminescence (PL) measurements were performed in Si/Si{sub 1−x}Ge{sub x} nanostructures with a single Si{sub 0.92}Ge{sub 0.08} nanometer-thick layer incorporated into Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si{sub 0.92}Ge{sub 0.08} nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.

  20. Structural and photoluminescence properties of Si-based nanosheet bundles rooted on Si substrates

    Science.gov (United States)

    Yuan, Peiling; Tamaki, Ryo; Kusazaki, Shinya; Atsumi, Nanae; Saito, Yuya; Kumazawa, Yuki; Ahsan, Nazmul; Okada, Yoshitaka; Ishida, Akihiro; Tatsuoka, Hirokazu

    2018-04-01

    Si-based nanosheet bundles were synthesized by the extraction of Ca atoms from CaSi2 microwalls grown on Si substrates by inositol hexakisphosphate solution or thermal treatment in FeCl2 vapor. The structural and photoluminescence properties of the Si-based nanosheet bundles were examined. The photoluminescence emissions in the visible region were clearly observed, and the temperature and excitation intensity dependences of the emissions were characterized. The observed Si-based nanosheets consist of thin Si layers, and a superlattice-like layered structural model is proposed to describe the Si-based nanosheet bundle structures and their photoluminescence property. The photoluminescence property of the nanosheets significantly depends on their treatment process. The luminescence mechanism of the nanosheets was discussed.

  1. Desigualdades de género en sobrepeso y obesidad entre indígenas chontales de Tabasco, México

    Directory of Open Access Journals (Sweden)

    Marcelina Cruz-Sánchez

    2012-01-01

    Full Text Available Antecedentes: La obesidad se ha convertido en una epidemia global (OMS y, aunque se sabe que afecta por igual a toda la población, las mujeres aparecen con más obesidad y obesidad central. Se desconoce el porqué de este fenómeno, o si adquiere características específicas entre la población indígena. Objetivo: identificar las desigualdades de género que subyacen al fenómeno del cuerpo con sobrepeso y obesidad entre indígenas chontales de Tabasco. Materiales y métodos: estudio cualitativo con entrevistas a profundidad a 15 informantes mujeres y hombres. La guía de entrevista contempló las categorías de: estilo de vida, pertenencia étnica, costumbres y hábitos de alimentación, usos y significados del cuerpo, así como normas de género. Las entrevistas fueron audio grabadas y transcritas. Se obtuvo el consentimiento informado por escrito para participar, así como la aprobación del comité de ética. Resultados: Entre la población estudiada, las mujeres presentan mayor sobrepeso y obesidad que sus pares varones, lo que se explica por las normas culturales y de género vigentes en la comunidad; el ejercicio está prohibido para ellas, los espacios públicos para prácticas deportivas son utilizados de manera exclusiva por los varones, las mujeres chontales, después de la maternidad, asumen que es “normal” ser gorda, la obesidad se considera herencia inevitable de los padres y no una enfermedad, la pérdida de peso no es deseable en ninguna etapa de la vida. Conclusiones: Las desigualdades de género son una importante condición para la prevalencia del sobrepeso y la obesidad entre las mujeres chontales. Los resultados de este estudio tienen implicaciones en la promoción de un estilo de vida saludable para la disminución de las tasas de sobrepeso y obesidad entre la población indígena y particularmente entre las mujeres.

  2. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    International Nuclear Information System (INIS)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong

    2010-01-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  3. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Energy Technology Data Exchange (ETDEWEB)

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  4. Si/C and H coadsorption at 4H-SiC{0001} surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wachowicz, E., E-mail: elwira@ifd.uni.wroc.pl [Institute of Experimental Physics, University of Wrocław, Plac M. Borna 9, PL-50-204 Wrocław (Poland); Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, PL-02-106 Warsaw (Poland)

    2016-06-15

    Highlights: • Si on C-terminated and C on Si-terminated surface adsorb in the H{sub 3} hollow site. • The preferred adsorption site is in contrary to the stacking order of bulk crystal. • The presence of hydrogen increases the adsorption energy of Si/C. • Hydrogen weakens the bonds between the adsorbed Si or C and the surface. • Carbon adsorbs on top of the surface carbon on the C-terminated surface. • With both C and H on Si-terminated surface the surface state vanishes. - Abstract: Density functional theory (DFT) study of adsorption of 0.25 monolayer of either Si or C on 4H-SiC{0001} surfaces is presented. The adsorption in high-symmetry sites on both Si- and C-terminated surfaces was examined and the influence of the preadsorbed 0.25 ML of hydrogen on the Si/C adsorption was considered. It was found out that for Si on C-terminated surface and C on Si-terminated the most favourable is threefolded adsorption site on both clean and H-precovered surface. This is contrary to the bulk crystal stacking order which would require adsorption on top of the topmost surface atom. In those cases, the presence of hydrogen weakens the bonding of the adsorbate. Carbon on the C-terminated surface, only binds on-top of the surface atom. The C−C bond-length is almost the same for the clean surface and for one with H and equals to ∼1.33 Å which is shorter by ∼0.2 than in diamond. The analysis of the electronic structure changes under adsorption is also presented.

  5. Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

    International Nuclear Information System (INIS)

    Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

    2016-01-01

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions

  6. Desigualdades de género en sobrepeso y obesidad entre indígenas chontales de Tabasco, México

    Directory of Open Access Journals (Sweden)

    Marcelina Cruz-Sánchez

    2012-01-01

    Full Text Available Antecedentes: La obesidad se ha convertido en una epidemia global y las mujeres presentan tasas más altas que los hombres. Se desconoce el porqué de este fenómeno, o si adquiere características específicas entre la población indígena. Objetivo: identificar las desigualdades de género que subyacen al fenómeno del cuerpo con sobrepeso y obesidad entre indígenas chontales de Tabasco. Materiales y métodos: estudio cualitativo con entrevistas a profundidad a 15 informantes mujeres y hombres. La guía de entrevista contempló las categorías de: estilo de vida, pertenencia étnica, costumbres y hábitos de alimentación, usos y significados del cuerpo, así como normas de género. Las entrevistas fueron audio grabadas y transcritas. Se obtuvo el consentimiento informado por escrito para participar, así como la aprobación del comité de ética. Resultados: las mujeres presentan mayor sobrepeso y obesidad que sus pares varones; el ejercicio está prohibido para ellas, los espacios públicos para prácticas deportivas son utilizados de manera exclusiva por los varones, las mujeres después de la maternidad, asumen que es ¿normal¿ ser gorda, la obesidad se considera herencia inevitable de los padres y no una enfermedad, la pérdida de peso no es deseable en ninguna etapa de lavida. Conclusiones: Las desigualdades de género son una importante condición para la prevalencia del sobrepeso y la obesidad entre las mujeres chontales. Los resultados de este estudio tienen implicaciones en la promoción de un estilo de vida saludable para la disminución de las tasas de sobrepeso y obesidad entre la población indígena y particularmente entre las mujeres.

  7. Electrical properties of SiO{sub 2}/SiC interfaces on 2°-off axis 4H-SiC epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Vivona, M., E-mail: marilena.vivona@imm.cnr.it [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Fiorenza, P. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy); Sledziewski, T.; Krieger, M. [Friedrich-Alexander-University (FAU) Erlangen-Nuremberg, Department of Physics, Staudtstrasse 7/Bld. A3, D-91058 Erlangen (Germany); Chassagne, T.; Zielinski, M. [NOVASiC, Savoie Technolac, BP267, F-73375 Le Bourget-du-Lac Cedex (France); Roccaforte, F. [CNR-IMM, Strada VIII, n. 5 – Zona Industriale, I-95121 Catania (Italy)

    2016-02-28

    Graphical abstract: - Highlights: • Processing and electrical characterization of MOS capacitors fabricated on 4H-SiC epilayers grown on 2°-off axis heavily doped substrates. • Excellent characteristics of the SiO{sub 2}/4H-SiC interface in terms of flatness, interface state density and oxide reliability. • Electrical behavior of the MOS devices comparable with that obtained for the state-of-the-art of 4°-off axis 4H-SiC material. • Demonstration of the maturity of the 2°-off axis material for application in 4H-SiC MOSFET device technology. - Abstract: In this paper, the electrical properties of the SiO{sub 2}/SiC interface on silicon carbide (4H-SiC) epilayers grown on 2°-off axis substrates were studied. After epilayer growth, chemical mechanical polishing (CMP) allowed to obtain an atomically flat surface with a roughness of 0.14 nm. Metal-oxide-semiconductor (MOS) capacitors, fabricated on this surface, showed an interface state density of ∼1 × 10{sup 12} eV{sup −1} cm{sup −2} below the conduction band, a value which is comparable to the standard 4°-off-axis material commonly used for 4H-SiC MOS-based device fabrication. Moreover, the Fowler–Nordheim and time-zero-dielectric breakdown analyses confirmed an almost ideal behavior of the interface. The results demonstrate the maturity of the 2°-off axis material for 4H-SiC MOSFET device fabrication.

  8. Unraveling the role of SiC or Si substrates in water vapor incorporation in SiO 2 films thermally grown using ion beam analyses

    Science.gov (United States)

    Corrêa, S. A.; Soares, G. V.; Radtke, C.; Stedile, F. C.

    2012-02-01

    The incorporation of water vapor in SiO 2 films thermally grown on 6H-SiC(0 0 0 1) and on Si (0 0 1) was investigated using nuclear reaction analyses. Water isotopically enriched in deuterium ( 2H or D) and in 18O was used. The dependence of incorporated D with the water annealing temperature and initial oxide thickness were inspected. The D amount in SiO 2/SiC structures increases continuously with temperature and with initial oxide thickness, being incorporated in the surface, bulk, and interface regions of SiO 2 films. However, in SiO 2/Si, D is observed mostly in near-surface regions of the oxide and no remarkable dependence with temperature or initial oxide thickness was observed. At any annealing temperature, oxygen from water vapor was incorporated in all depths of the oxide films grown on SiC, in contrast with the SiO 2/Si.

  9. Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides

    NARCIS (Netherlands)

    Pandraud, G.; Margallo-Balbas, E.; Sarro, P.M.

    2012-01-01

    We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9 dB?cm for the quasi-transverse magnetic mode. To assess the potential of this device as a

  10. High resolution investigation of the 30Si(þ, þ)30Si reaction

    NARCIS (Netherlands)

    Walinga, J.; Rinsvelt, H.A. van; Endt, P.M.

    The differential cross section for elastic scattering of protons on 30Si was measured with surface barrier counters at four angles. Thirty-six 30Si(þ, γ)31P resonances are known in the Ep=1–2MeV region. Fifteen of these were also observed in the 30Si(þ, þ)30Si reaction, with natural widths varying

  11. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  12. Removal of C and SiC from Si and FeSi during ladle refining and solidification

    Energy Technology Data Exchange (ETDEWEB)

    Klevan, Ole Svein

    1997-12-31

    The utilization of solar energy by means of solar cells requires the Si to be very pure. The purity of Si is important for other applications as well. This thesis mainly studies the total removal of carbon from silicon and ferrosilicon. The decarburization includes removal of SiC particles by stirring and during casting in addition to reduction of dissolved carbon by gas purging. It was found that for three commercial qualities of FeSi75, Refined, Gransil, and Standard lumpy, the refined quality is lowest in carbon, followed by Gransil and Standard. A decarburization model was developed that shows the carbon removal by oxidation of dissolved carbon to be a slow process at atmospheric pressure. Gas stirring experiments have shown that silicon carbide particles are removed by transfer to the ladle wall. The casting method of ferrosilicon has a strong influence on the final total carbon content in the commercial alloy. Shipped refined FeSi contains about 100 ppm total carbon, while the molten alloy contains roughly 200 ppm. The total carbon out of the FeSi-furnace is about 1000 ppm. It is suggested that low values of carbon could be obtained on an industrial scale by injection of silica combined with the use of vacuum. Also, the casting system could be designed to give low carbon in part of the product. 122 refs., 50 figs., 24 tabs.

  13. Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

    International Nuclear Information System (INIS)

    Pi, X.D.; Coleman, P.G.; Harding, R.; Davies, G.; Gwilliam, R.M.; Sealy, B.J.

    2003-01-01

    Positron annihilation spectroscopy has been employed to study changes in the interface region between nanocrystalline Si and SiO 2 , following annealing between 400 deg. C and 900 deg. C in nitrogen or oxygen. With the support of photoluminescence spectroscopy we find that nitrogen and oxygen are trapped in voids at the interface at low temperatures. At temperatures above 700 deg. C both nitrogen and oxygen react with Si nanocrystals, and the resulting volume increase introduces stress in the SiO 2 matrix which is relaxed by the shrinkage of its intrinsic open volume. Oxygen appears to enhance Si diffusion in SiO 2 so that the agglomeration of Si nanocrystals occurs more readily during annealing in oxygen than in nitrogen

  14. Heteroepitaxy of zinc-blende SiC nano-dots on Si substrate by organometallic ion beam

    International Nuclear Information System (INIS)

    Matsumoto, T.; Kiuchi, M.; Sugimoto, S.; Goto, S.

    2006-01-01

    The self-assembled SiC nano-dots were fabricated on Si(111) substrate at low-temperatures using the organometallic ion beam deposition technique. The single precursor of methylsilicenium ions (SiCH 3 + ) with the energy of 100 eV was deposited on Si(111) substrate at 500, 550 and 600 deg. C. The characteristics of the self-assembled SiC nano-dots were analyzed by reflection high-energy electron diffraction (RHEED), Raman spectroscopy and atomic force microscope (AFM). The RHEED patterns showed that the crystal structure of the SiC nano-dots formed on Si(111) substrate was zinc-blende SiC (3C-SiC) and it was heteroepitaxy. The self-assembled SiC nano-dots were like a dome in shape, and their sizes were the length of 200-300 nm and the height of 10-15 nm. Despite the low-temperature of 500 deg. C as SiC crystallization the heteroepitaxial SiC nano-dots were fabricated on Si(111) substrate using the organometallic ion beam

  15. Electrical resistivity and thermal conductivity of SiC/Si ecoceramics prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Gutierrez-Pardo, A.; Ramirez-Rico, J.

    2012-10-01

    Samples of β-SiC/Si ecoceramics with a silicon concentration of ˜21 vol % have been prepared using a series of consecutive procedures (carbonization of sapele wood biocarbon, synthesis of high-porosity biocarbon with channel-type pores, infiltration of molten silicon into empty channels of the biocarbon, formation of β-SiC, and retention of residual silicon in channels of β-SiC). The electrical resistivity ρ and thermal conductivity κ of the β-SiC/Si ecoceramic samples have been measured in the temperature range 5-300 K. The values of ρ{Si/chan}( T) and κ{Si/chan}( T) have been determined for silicon Sichan located in β-SiC channels of the synthesized β-SiC/Si ecoceramics. Based on the performed analysis of the obtained results, the concentration of charge carriers (holes) in Sichan has been estimated as p ˜ 1019 cm-3. The factors that can be responsible for such a high value of p have been discussed. The prospects for practical application of β-SiC/Si ecoceramics have been considered.

  16. Análisis del autoconcepto en las víctimas de violencia de género entre adolescentes

    Directory of Open Access Journals (Sweden)

    María Penado Abilleira

    2017-07-01

    Full Text Available El objetivo de esta investigación es analizar el autoconcepto en las víctimas de violencia de género entre adolescentes. Habiéndose constatado una menor autoestima en las víctimas de este tipo de violencia, se pretende comprobar si sucede lo mismo con el componente cognitivo de la visión que cada uno tenemos de nosotros mismos y que constituye el autoconcepto. Se ha utilizado una muestra compuesta por 266 adolescentes españoles con edades comprendidas entre los 14 y 19 años, que cursan estudios de Enseñanza Secundaria Obligatoria y Bachillerato. Se observa interacción significativa del género y la edad con el autoconcepto en adolescentes que sufren violencia en su relación, y las chicas con edades comprendidas entre los 16-17 años son el grupo de mayor vulnerabilidad. Son ellas las que presentan más bajo autoconcepto emocional y físico; así se constata que a medida que aumenta la edad, la prevalencia de este tipo de violencia se hace mayor. De cara a prevenir y paliar los efectos de la violencia de pareja en adolescentes, los programas de prevención deben incluir dentro de sus áreas de actuación acciones de educación emocional, que ayuden a mejorar el autoconcepto emocional de las víctimas.

  17. Diferencias del clima laboral entre empleados contratados por outsourcing y empleados directos: evidencia empírica de la zona norte de Colombia.

    Directory of Open Access Journals (Sweden)

    David Juliao Esparragoza

    2014-12-01

    Full Text Available Son pocos los estudios empíricos sobre clima laboral en Colombia que muestran las diferencias entre grupos de trabajadores que, teniendo las mismas funciones en la empresa, cuentan con diferentes tipos de contrato. Esta investigación, a partir de un estudio realizado con empleados de una importante empresa de bebidas ubicada en la costa norte de Colombia, trata de aportar a la resolución de esta carencia, verificando si existen diferencias significativas, en algunas variables del clima laboral, entre los grupos de trabajadores contratados directamente y aquellos vinculados por prestación de servicios. El trabajo es de tipo descriptivo y transversal, se apoya en el método hipotético inductivo y utiliza el instrumento imcoc (evaluando las diferencias inter-grupales en las seis variables que lo componen, a saber: objetivos, cooperación, liderazgo, toma de decisiones, relaciones interpersonales, motivación y control.

  18. Correlación entre el Clima Organizacional Percibido por los Trabajadores de Salud y su Compromiso Organizacional en la Micro Red Edificadores Misti-Minsa, Arequipa 2008

    OpenAIRE

    Flores Flores Ricardina

    2010-01-01

    Se realizó una investigación sobre el clima organizacional percibido por los trabajadores de salud y su compromiso organizacional en la Micro Red Edificadores Misti. El tipo de estudio es transversal y correlacional para explorar si existe una correlación directa entre el clima y el compromiso organizacional. Se plantearon como objetivos caracterizar el clima y compromiso organizacional para luego determinar su correlación. El instrumento que se utiliza es de Litwin y Stinger c...

  19. Ordered GeSi nanorings grown on patterned Si (001 substrates

    Directory of Open Access Journals (Sweden)

    Ma Yingjie

    2011-01-01

    Full Text Available Abstract An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001 substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings. PACS code1·PACS code2·more Mathematics Subject Classification (2000 MSC code1·MSC code2·more

  20. White photoluminescence from Si/SiO{sub 2} nanostructured film

    Energy Technology Data Exchange (ETDEWEB)

    Duong, P.H.; Ngan, N.T.T.; Tuan, C.A. [Institute of Materials Science, Vietnamese Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi (Viet Nam); Huy, P.T. [International Training Institute of Materials Science, Hanoi University of Technology, 1 Dai Co Viet, Hanoi (Viet Nam); Itoh, T. [Graduate School of Engineering Science, Osaka University, Toyonaka (Japan)

    2008-12-15

    We present in this work the results of PL measurement of Si-NC embedded in Si/SiO{sub 2} multilayer system. A very intense broad luminescence band was observed in the sample under illumination in vacuum by UV laser line. The PL intensity enhancement and quenching effect observed in different ambients can be attributed to the energy exchange from NC to MO. The storage of the annealed sample in vacuum for a long time drastically changed the PL properties of Si-NC. The origin of these phenomena will be discussed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Status and prospects for SiC-SiC composite materials development for fusion applications

    International Nuclear Information System (INIS)

    Sharafat, S.; Jones, R.H.; Kohyama, A.; Fenici, P.

    1995-01-01

    Silicon carbide (SiC) composites are very attractive for fusion applications because of their low afterheat and low activation characteristics coupled with excellent high temperature properties. These composites are relatively new materials that will require material development as well as evaluation of hermiticity, thermal conductivity, radiation stability, high temperature strength, fatigue, thermal shock, and joining techniques. The radiation stability of SiC-SiC composites is a critical aspect of their application as fusion components and recent results will be reported. Many of the non-fusion specific issues are under evaluation by other ceramic composite development programs, such as the US national continuous fiber ceramic composites.The current development status of various SiC-SiC composites research and development efforts is given. Effect of neutron irradiation on the properties of SiC-SiC composite between 500 and 1200 C are reported. Novel high temperature properties specific to ceramic matrix composite (CMC) materials are discussed. The chemical stability of SiC is reviewed briefly. Ongoing research and development efforts for joining CMC materials including SiC-SiC composites are described. In conclusion, ongoing research and development efforts show extremely promising properties and behavior for SiC-SiC composites for fusion applications. (orig.)

  2. Si K-edge XANES study of SiOxCyHz amorphous polymeric materials

    International Nuclear Information System (INIS)

    Chaboy, J.; Barranco, A.; Yanguas-Gil, A.; Yubero, F.; Gonzalez-Elipe, A. R.

    2007-01-01

    This work reports on x-ray absorption spectroscopy study at the Si K edge of several amorphous SiO x C y H z polymers prepared by plasma-enhanced chemical-vapor deposition with different C/O ratios. SiO 2 and SiC have been used as reference materials. The comparison of the experimental Si K-edge x-ray absorption near-edge structure spectra with theoretical computations based on multiple scattering theory has allowed us to monitor the modification of the local coordination around Si as a function of the overall C/O ratio in this kind of materials

  3. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  4. Microstructural optimization of high temperature SiC/SiC composites by nite process

    International Nuclear Information System (INIS)

    Shimoda, K.; Park, J.S.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  5. Microstructural optimization of high temperature SiC/SiC composites by nite process

    Energy Technology Data Exchange (ETDEWEB)

    Shimoda, K. [Kyoto Univ., Graduate School of Energy Science (Japan); Park, J.S. [Kyoto Univ., Institute of Advanced Energy (Japan); Hinoki, T.; Kohyama, A. [Kyoto Univ., lnstitute of Advanced Energy, Gokasho, Uji (Japan)

    2007-07-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  6. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates

    International Nuclear Information System (INIS)

    Teng, F-Y; Ting, J-M; Sharma, Sahendra P; Liao, Kun-Hou

    2008-01-01

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs

  7. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates.

    Science.gov (United States)

    Teng, F-Y; Ting, Jyh-Ming; Sharma, Sahendra P; Liao, Kun-Hou

    2008-03-05

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs.

  8. Incrementando Las Relaciones Comerciales Entre Colombia Y China

    Directory of Open Access Journals (Sweden)

    Jaime Rafael Ahcar Olmos

    2008-10-01

    Full Text Available Después de las reformas de finales de los años setenta, China consiguió su despegue económico a tal punto que, en la actualidad, se consolida como uno de los mercados más importantes del mundo, recibiendo la atención de investigadores y hombres de negocios a lo largo del planeta. En Colombia existen pocos estudios que hayan explorado las relaciones comerciales con China; en tal sentido, el presente artículo ofrece una amplia revisión de fuentes estadísticas y referencias bibliográficas, dando luces sobre las características y los factores que afectan las relaciones comerciales bilaterales. Los resultados muestran que, si bien China es un valioso proveedor de mercancías para Colombia, las exportaciones hacia ese país aún se encuentran por debajo de su potencial, y se genera un déficit comercial enorme. También muestra que las exportaciones colombianas hacia China se hallan concentradas en unos pocos productos y que dado el tamaño y potencialidad de esta economía, se deberían comenzar negociaciones comerciales que busquen la firma de un acuerdo de libre comercio que permita incrementar el comercio entre ambos países.

  9. Wafer-scale high-throughput ordered arrays of Si and coaxial Si/Si(1-x)Ge(x) wires: fabrication, characterization, and photovoltaic application.

    Science.gov (United States)

    Pan, Caofeng; Luo, Zhixiang; Xu, Chen; Luo, Jun; Liang, Renrong; Zhu, Guang; Wu, Wenzhuo; Guo, Wenxi; Yan, Xingxu; Xu, Jun; Wang, Zhong Lin; Zhu, Jing

    2011-08-23

    We have developed a method combining lithography and catalytic etching to fabricate large-area (uniform coverage over an entire 5-in. wafer) arrays of vertically aligned single-crystal Si nanowires with high throughput. Coaxial n-Si/p-SiGe wire arrays are also fabricated by further coating single-crystal epitaxial SiGe layers on the Si wires using ultrahigh vacuum chemical vapor deposition (UHVCVD). This method allows precise control over the diameter, length, density, spacing, orientation, shape, pattern and location of the Si and Si/SiGe nanowire arrays, making it possible to fabricate an array of devices based on rationally designed nanowire arrays. A proposed fabrication mechanism of the etching process is presented. Inspired by the excellent antireflection properties of the Si/SiGe wire arrays, we built solar cells based on the arrays of these wires containing radial junctions, an example of which exhibits an open circuit voltage (V(oc)) of 650 mV, a short-circuit current density (J(sc)) of 8.38 mA/cm(2), a fill factor of 0.60, and an energy conversion efficiency (η) of 3.26%. Such a p-n radial structure will have a great potential application for cost-efficient photovoltaic (PV) solar energy conversion. © 2011 American Chemical Society

  10. Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

    Science.gov (United States)

    Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

    2018-02-01

    We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.

  11. O fraternalismo: uma síntese entre o idealismo e o materialismo histórico e dialético

    OpenAIRE

    de Andrade, Maria Inês Chaves

    2015-01-01

    Superada a luta de classes na unidade da aparência e da essência que põe em voga o ser humano do homem e tomando-se Deus como Ser Humano, imagem e semelhança, depositário da essência humana alienada, a proposição racional de chamar-se a si sendo o que é na efetivação dos Direitos Humanos para todos os homens, através do Estado, afina o real e o racional colocando o fraternalismo como síntese entre o idealismo de Hegel e o materialismo histórico e dialético de Marx.

  12. Formation of AlFeSi phase in AlSi12 alloy with Ce addition

    Directory of Open Access Journals (Sweden)

    S. Kores

    2012-04-01

    Full Text Available The influence of cerium addition on the solidification sequence and microstructure constituents of the Al-Si alloys with 12,6 mass % Si was examined. The solidification was analyzed by a simple thermal analysis. The microstructures were examined with conventional light and scanning electron microscopy. Ternary AlSiCe phase was formed in the Al-Si alloys with added cerium during the solidification process. AlSiCe and β-AlFeSi phases solidified together in the region that solidified the last. Cerium addition influenced on the morphology of the α-AlFeSi phase solidification.

  13. Crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses; Li2O-SiO2, Na2O-SiO2, Na2O-CaO-SiO2 kei glass no kessho sekishutsu kyodo

    Energy Technology Data Exchange (ETDEWEB)

    Tsutsumi, K.; Otake, J.; Nagasaka, T.; Hino, M. [Tohoku University, Sendai (Japan)

    1998-06-01

    It has been known that crystallization of mold powder is effective on the disturbance of heat transfer between mold and solidified shell in production of middle carbon steel slabs in continuous casting process. But it has not yet been made clear which composition of mold powder is the most suitable for crystallization. The crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses was observed by differential thermal analysis (DTA) and hot-thermocouple methods with DTA in the present work. As a result, addition of alkaline metal and alkaline earth metal oxides to SiO2 increased the critical cooling rate for glass formation in binary system of Li2O-SiO2 and Na2O-SiO2 and Li2O-SiO2 system crystallized easier than Na2O-SiO2 system. In ternary system of Na2O-CaO-SiO2, addition of Na2O hurried the critical cooling rate at CaO/SiO2=0.93 mass ratio, but the rate was almost constant in the composition range of more than 15 mass% Na2O. The slag of CaO/SiO2=0.93 made the rate faster than the slag of CaO/SiO2=0.47 at constant content of 10mass% Na2O. 17 refs., 10 figs., 3 tabs.

  14. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Directory of Open Access Journals (Sweden)

    Wei-Ting eLai

    2016-02-01

    Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

  15. Thermally induced formation of SiC nanoparticles from Si/C/Si multilayers deposited by ultra-high-vacuum ion beam sputtering

    International Nuclear Information System (INIS)

    Chung, C-K; Wu, B-H

    2006-01-01

    A novel approach for the formation of SiC nanoparticles (np-SiC) is reported. Deposition of Si/C/Si multilayers on Si(100) wafers by ultra-high-vacuum ion beam sputtering was followed by thermal annealing in vacuum for conversion into SiC nanoparticles. The annealing temperature significantly affected the size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500 0 C, while a few particles started to appear when the annealing temperature was increased to 700 0 C. At an annealing temperature of 900 0 C, many small SiC nanoparticles, of several tens of nanometres, surrounding larger submicron ones appeared with a particle density approximately 16 times higher than that observed at 700 0 C. The higher the annealing temperature was, the larger the nanoparticle size, and the higher the density. The higher superheating at 900 0 C increased the amount of stable nuclei, and resulted in a higher particle density compared to that at 700 0 C. These particles grew larger at 900 0 C to reduce the total surface energy of smaller particles due to the higher atomic mobility and growth rate. The increased free energy of stacking defects during particle growth will limit the size of large particles, leaving many smaller particles surrounding the large ones. A mechanism for the np-SiC formation is proposed in this paper

  16. La relación entre la inclusión financiera y el rezago social en México

    Directory of Open Access Journals (Sweden)

    José E. Calzada Rovirosa

    2015-06-01

    Full Text Available El objetivo del presente trabajo es analizar si en México existe relación entre la inclusión financiera y los indicadores de pobreza, con el fin de identificar si el acceso a los servicios financieros se relaciona con mejores condiciones de vida. Este tema es de relevancia para las políticas públicas, ya que el propósito de la reforma financiera promulgada en 2014 es contribuir al crecimiento económico incluyente. Para ello, se llevó a cabo un análisis utilizando la regresión lineal múltiple y el índice de correlación de Pearson, con los que se identificó que los rezagos de seguridad social tienen mayor relación con la inclusión financiera, particularmente con los puntos de acceso de corresponsales y los contratos de captación vía nómina. Asimismo, se encontró que las actividades de ahorro y crédito popular, aunque se dirigen a los sectores más vulnerables, no tienen relación con los indicadores de pobreza.

  17. Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC.

    Science.gov (United States)

    Jia, Yuping; Sun, Xiaojuan; Shi, Zhiming; Jiang, Ke; Liu, Henan; Ben, Jianwei; Li, Dabing

    2018-05-28

    Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of devices is primarily dependent on the interfacial heterojunction between graphene and SiC. Here, the band structure of the EG/SiC heterojunction is experimentally investigated by Kelvin probe force microscopy. The dependence of the barrier height at the EG/SiC heterojunction to the initial surface state of SiC is revealed. Both the barrier height and band bending tendency of the heterojunction can be modulated by controlling the surface state of SiC, leading to the tuned carrier transport behavior at the EG/SiC interface. The barrier height at the EG/SiC(000-1) interface is almost ten times that of the EG/SiC(0001) interface. As a result, the amount of carrier transport at the EG/SiC(000-1) interface is about ten times that of the EG/SiC(0001) interface. These results offer insights into the carrier transport behavior at the EG/SiC heterojunction by controlling the initial surface state of SiC, and this strategy can be extended in all devices with graphene as the top layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. NIMROD Simulations of the HIT-SI and HIT-SI3 Devices

    Science.gov (United States)

    Morgan, Kyle; Jarboe, Tom; Hossack, Aaron; Chandra, Rian; Everson, Chris

    2017-10-01

    The Helicity Injected Torus with Steady Inductive helicity injection (HIT-SI) experiment uses a set of inductively driven helicity injectors to apply non-axisymmetric current drive on the edge of the plasma, driving an axisymmetric spheromak equilibrium in a central confinement volume. Significant improvements have been made to extended MHD modeling of HIT-SI, with both the resolution of disagreement at high injector frequencies in HIT-SI in addition to successes with the new upgraded HIT-SI3 device. Previous numerical studies of HIT-SI, using a zero-beta eMHD model, focused on operations with a drive frequency of 14.5 kHz, and found reduced agreement with both the magnetic profile and current amplification at higher frequencies (30-70 kHz). HIT-SI3 has three helicity injectors which are able to operate with different mode structures of perturbations through the different relative temporal phasing of the injectors. Simulations that allow for pressure gradients have been performed in the parameter regimes of both devices using the NIMROD code and show improved agreement with experimental results, most notably capturing the observed Shafranov-shift due to increased beta observed at higher finj in HIT-SI and the variety of toroidal perturbation spectra available in HIT-SI3. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Fusion Energy Sciences under Award Number DE-FG02- 96ER54361.

  19. Non-switching to switching transferring mechanism investigation for Ag/SiO x /p-Si structure with SiO x deposited by HWCVD

    Science.gov (United States)

    Liu, Yanhong; Wang, Ruoying; Li, Zhongyue; Wang, Song; Huang, Yang; Peng, Wei

    2018-04-01

    We proposed and fabricated an Ag/SiO x /p-Si sandwich structure, in which amorphous SiO x films were deposited through hot wire chemical vapor deposition (HWCVD) using tetraethylorthosilicate (TEOS) as Si and O precursor. Experimental results indicate that the I–V properties of this structure transfer from non-switching to switching operation as the SiO x deposition temperature increased. The device with SiO x deposited at high deposition temperature exhibits typical bipolar switching properties, which can be potentially used in resistive switching random accessible memory (RRAM). The transferring mechanism from non-switching to switching can be ascribed to the change of structural and electronic properties of SiO x active layer deposited at different temperatures, as evidenced by analyzing FTIR spectrum and fitting its I–V characteristics curves. This work demonstrates a safe and practicable low-temperature device-grade SiO x film deposition technology by conducting HWCVD from TEOS.

  20. SI Notes.

    Science.gov (United States)

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  1. Polarized luminescence of nc-Si-SiO x nanostructures on silicon substrates with patterned surface

    Science.gov (United States)

    Michailovska, Katerina; Mynko, Viktor; Indutnyi, Ivan; Shepeliavyi, Petro

    2018-05-01

    Polarization characteristics and spectra of photoluminescence (PL) of nc-Si-SiO x structures formed on the patterned and plane c-Si substrates are studied. The interference lithography with vacuum chalcogenide photoresist and anisotropic wet etching are used to form a periodic relief (diffraction grating) on the surface of the substrates. The studied nc-Si-SiO x structures were produced by oblique-angle deposition of Si monoxide in vacuum and the subsequent high-temperature annealing. The linear polarization memory (PM) effect in PL of studied structure on plane substrate is manifested only after the treatment of the structures in HF and is explained by the presence of elongated Si nanoparticles in the SiO x nanocolumns. But the PL output from the nc-Si-SiO x structure on the patterned substrate depends on how this radiation is polarized with respect to the grating grooves and is much less dependent on the polarization of the exciting light. The measured reflection spectra of nc-Si-SiO x structure on the patterned c-Si substrate confirmed the influence of pattern on the extraction of polarized PL.

  2. The Degradation Behavior of SiCf/SiO2 Composites in High-Temperature Environment

    Science.gov (United States)

    Yang, Xiang; Cao, Feng; Qing, Wang; Peng, Zhi-hang; Wang, Yi

    2018-04-01

    SiCf/SiO2 composites had been fabricated efficiently by Sol-Gel method. The oxidation behavior, thermal shock property and ablation behavior of SiCf/SiO2 composites was investigated. SiCf/SiO2 composites showed higher oxidation resistance in oxidation atmosphere, the flexural strength retention ratio was larger than 90.00%. After 1300 °C thermal shock, the mass retention ratio was 97.00%, and the flexural strength retention ratio was 92.60%, while after 1500 °C thermal shock, the mass retention ratio was 95.37%, and the flexural strength retention ratio was 83.34%. After 15 s ablation, the mass loss rate was 0.049 g/s and recession loss rate was 0.067 mm/s. The SiO2 matrix was melted in priority and becomes loosen and porous. With the ablation going on, the oxides were washed away by the shearing action of the oxyacetylene flame. The evaporation of SiO2 took away large amount of heat, which is also beneficial to the protection for SiCf/SiO2 composites.

  3. Análisis de la relación entre contabilidad y fiscalidad en Colombia

    Directory of Open Access Journals (Sweden)

    Ernesto María Sierra González

    2008-06-01

    Full Text Available La relación entre contabilidad y fiscalidad ha sido una tradición en Colombia, pues es notable la influencia ejercida por las instituciones de carácter público encargadas del control impositivo, en la normativa sobre la cual descansa la práctica contable del país. Si bien se han hecho esfuerzos por separar las dos dimensiones, aún hoy estas permanecen. Con la propuesta de adoptar Normas Internacionales de Contabilidad (NIC, se hace necesario separar las dos esferas. Pero las diferencias en los métodos de cálculo y valoración afectan los resultados de la empresa y por tanto su efecto impositivo. Se trata pues del análisis de esta problemática en aras de garantizar los niveles de recaudo y evitar distorsiones en el mercado.

  4. Effect of Si implantation on the microstructure of silicon nanocrystals and surrounding SiO2 layer

    International Nuclear Information System (INIS)

    Ross, G.G.; Smirani, R.; Levitcharsky, V.; Wang, Y.Q.; Veilleux, G.; Saint-Jacques, R.G.

    2005-01-01

    Si nanocrystals (Si-nc) embedded in a SiO 2 layer have been characterized by means of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). For local Si concentration in excess 8 x 10 21 Si + /cm 3 , the size of the Si-nc was found to be ∼3 nm and comparatively homogeneous throughout the whole implanted layer. For local Si concentration in excess of ∼2.4 x 10 22 Si + /cm 3 , the Si-nc diameter ranges from ∼2 to ∼12 nm in the sample, the Si-nc in the middle region of the implanted layer being bigger than those near the surface and the bottom of the layer. Also, Si-nc are visible deeper than the implanted depth. Characterization by XPS shows that a large quantity of oxygen was depleted from the first ∼25 nm in this sample (also visible on TEM image) and most of the SiO 2 bonds have been replaced by Si-O bonds. Experimental and simulation results suggest that a local Si concentration in excess of ∼3 x 10 21 Si/cm 3 is required for the production of Si-nc

  5. Chemically activated graphene/porous Si@SiO{sub x} composite as anode for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Hua-Chao [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China); Yang, Xue-Lin, E-mail: xlyang@ctgu.edu.cn [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China); Zhang, Lu-Lu; Ni, Shi-Bing [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China)

    2014-10-15

    Chemically activated graphene/porous Si@SiO{sub x} (CAG/Si@SiO{sub x}) composite has been synthesized via magnesiothemic reduction of mesoporous SiO{sub 2} (MCM-48) to porous Si@SiO{sub x} and dispersing in the suspension of chemically activated graphene oxide (CAGO) followed by thermal reduction. The porous Si@SiO{sub x} particles are well encapsulated in chemically activated graphene (CAG) matrix. The resulting CAG/Si@SiO{sub x} composite exhibits a high reversible capacity and excellent cycling stability up to 763 mAh g{sup −1} at a current density of 100 mA g{sup −1} after 50 cycles. The porous structure of CAG layer and Si@SiO{sub x} is beneficial to accommodate volume expansion of Si during discharge and charge process and the interconnected CAG improves the electronic conductivity of composite. - Highlights: • Chemically activated graphene encapsulated porous Si composite was prepared. • The graphene offers a continuous electrically conductive network. • The porous structure can accommodate volume expansion of Si-based materials. • The composite exhibits excellent lithium storage performance.

  6. Divergencias en la conceptualización de la relación entre culturas

    Directory of Open Access Journals (Sweden)

    César Cisternas Irarrázabal

    Full Text Available Resumen La conceptualización de la relación entre culturas es un tópico que está lejos de un acuerdo sobre cuál es el mejor término para analizar aquella realidad. Desde diferentes corrientes filosóficas, tales como el liberalismo, republicanismo, comunitarismo o postcolonialismo, se han dado miríadas de visiones sobre la materia, en las cuales también ha jugado un papel el uso pragmático que se le da a los conceptos. El presente artículo pretende mapear la discusión en este campo. Para esto, se dividió el debate geopolíticamente; de este modo, se presenta, por una parte, la realidad en la modernidad central, y por la otra, el estado del arte en Latinoamérica. Se llega a la conclusión que, en muchos casos, las diferencias entre los enfoques no son tan radicales como pareciera a primera vista en la discusión. Asimismo, se observa que existen ciertos puntos sobre los cuales cualquier sugerencia en materia de interculturalidad debe pronunciarse, a saber, la naturaleza de las identidades, las características deseadas del Estado-nación, la postura frente a la modernidad occidental, la aceptabilidad de la democracia y los derechos humanos como valores universales, quiénes son los sujetos interculturales y si las relaciones se deben basar en la igualdad o el reconocimiento. 1

  7. Relación entre las Competencias Laborales de los Servidores y la Calidad en el Servicio Percibida por los Usuarios/Clientes

    OpenAIRE

    López Carrilles, Angélica B.

    2004-01-01

    A lo largo de la investigación, se presenta el proceso para determinar si existe una relación entre las competencias laborales de los servidores y la calidad en el servicio que los usuarios/clientes perciben al recibir el servicio En el Capítulo I de la investigación se presenta lo relacionado con el tema de la investigación, el marco teórico sobre calidad, calidad en el servicio, así como también características de las personas y competencias, algunas clasificaciones de éstas Últimas y toda ...

  8. Análisis Comparativo Entre el Dinero Electronico y el Sistema Bancario Tradicional: Medición en la Ciudad de Guayaquil

    OpenAIRE

    Espol; Peña Chávez, Shirley Katherine; Yulan Fienco, Vanesa Jacqueline

    2017-01-01

    Realizar un análisis comparativo entre el sistema bancario tradicional y el sistema de dinero electrónico, llamado actualmente “efectivo desde mi celular”, el mismo que constituye el nuevo medio de pago que implementó el gobierno de turno; a través del banco central del ecuador a partir de diciembre del 2014, con el propósito de mejorar la inclusión financiera en la población de los sectores marginales del país. el fin de esta investigación es de conocer si realmente se está desempeñando el o...

  9. Preparation and Oxidation Resistance of Mo-Si-B Coating on Nb-Si Based Alloy Surface

    Directory of Open Access Journals (Sweden)

    PANG Jie

    2018-02-01

    Full Text Available Mo-Si-B coating was prepared on Nb-Si alloys to improve the high-temperature oxidation. The influence of the halide activators (NaF and AlF3 on Si-B co-depositing to obtain Mo-Si-B coating on Nb-Si alloys was analyzed by thermochemical calculations. The results show that NaF proves to be more suitable than AlF3 to co-deposit Si and B. Then Mo-Si-B can be coated on Nb-Si based alloys using detonation gun spraying of Mo followed by Si and B co-deposition. The fabricated coatings consist of outer MoSi2 layer with fine boride phase and inner unreacted Mo layer. The mass gain of the Mo-Si-B coating is 1.52mg/cm2 after oxidation at 1250℃ for 100h. The good oxidation resistance results in a protective borosilicate scale formed on the coating.

  10. The effect of SiC particle size on the properties of Cu–SiC composites

    International Nuclear Information System (INIS)

    Celebi Efe, G.; Zeytin, S.; Bindal, C.

    2012-01-01

    Graphical abstract: The relative densities of Cu–SiC composites sintered at 700 °C for 2 h are ranged from 97.3% to 91.8% for SiC with 1 μm particle size and 97.5% to 95.2% for SiC with 5 μm particle size, microhardness of composites ranged from 143 to 167 HV for SiC having 1 μm particle size and 156–182 HVN for SiC having 5 μm particle size and the electrical conductivity of composites changed between 85.9% IACS and 55.7% IACS for SiC with 1 μm particle size, 87.9% IACS and 65.2%IACS for SiC with 5 μm particle size. It was found that electrical conductivity of composites containing SiC with 5 μm particle size is better than that of Cu–SiC composites containing SiC with particle size of 1 μm. Highlights: ► In this research, the effect of SiC particle size on some properties of Cu–SiC composites were investigated. ► The mechanical properties were improved. ► The electrical properties were obtained at desirable level. -- Abstract: SiC particulate-reinforced copper composites were prepared by powder metallurgy (PM) method and conventional atmospheric sintering. Scanning electron microscope (SEM), X-ray diffraction (XRD) techniques were used to characterize the sintered composites. The effect of SiC content and particle size on the relative density, hardness and electrical conductivity of composites were investigated. The relative densities of Cu–SiC composites sintered at 700 °C for 2 h are ranged from 97.3% to 91.8% for SiC with 1 μm particle size and from 97.5% to 95.2% for SiC with 5 μm particle size. Microhardness of composites ranged from 143 to 167 HV for SiC having 1 μm particle size and from 156 to 182 HV for SiC having 5 μm particle size. The electrical conductivity of composites changed between 85.9% IACS and 55.7% IACS for SiC with 1 μm particle size, between 87.9% IACS and 65.2% IACS for SiC with 5 μm particle size.

  11. Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C-SiC nanocrystals in the oxide

    International Nuclear Information System (INIS)

    Pongracz, A.; Battistig, G.; Duecso, Cs.; Josepovits, K.V.; Deak, P.

    2007-01-01

    Our group previously proved that a simple reactive annealing in CO containing gas produces 3C-SiC nanocrystals, which are epitaxially and void-free aligned in the Si substrate. By a further thermal oxidation step, these nanocrystals can be lifted from the Si and incorporated into the SiO 2 matrix, thereby creating a promising structure for charge storage. In this work the structural and electrical properties of such systems with nanocrystalline SiC will be presented. Prototype MOS structures with 3C-SiC nanocrystals were produced for current-voltage and capacitance-voltage measurements. The results indicate that the high-temperature annealing did not damage the MOS structure, despite the fact that the CO annealing changed the electrical properties of the system. There was a positive charge accumulation and a reversible carrier injection observed in the structure. We assume that the positive charges originated from oxygen vacancies and the charge injection is related to the presence of SiC nanocrystals

  12. Amorphization threshold in Si-implanted strained SiGe alloy layers

    International Nuclear Information System (INIS)

    Simpson, T.W.; Love, D.; Endisch, E.; Goldberg, R.D.; Mitchell, I.V.; Haynes, T.E.; Baribeau, J.M.

    1994-12-01

    The authors have examined the damage produced by Si-ion implantation into strained Si 1-x Ge x epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si 1-x Ge x (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si 1-x Ge x , and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer

  13. Elevated Temperature Properties of Commercially Available NITE-SiC/SiC Composites

    International Nuclear Information System (INIS)

    Choi, Y.B.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: Continuous fiber-reinforced ceramic matrix composites (CMCs) have been expected as a new type of material having high fracture resistance up to a high temperature. In recent years, there have been extensive efforts in our research group to develop high performance SiC/SiC composites for energy applications, where improvements in mechanical properties and damage resistance by innovative new fabrication process with emphasis on interface improvement have been greatly accomplished. One of the most outstanding accomplishments is the Nano-powder Infiltration and Transient Eutectic (NITE) process using PyC coated Tyranno-SA fibers. For making SiC/SiC composites more attractive and competitive for high temperature structural components and for other industrial applications, one of the key issues is to demonstrate its reliability and safety under severe environments. Also to demonstrate the potential to produce SiC/SiC by NITE process from large scale production line at industries is very important. This paper provides fundamental database of mechanical properties and microstructure of Cera-NITE, the trade name of NITE-SiC/SiC composites. The mechanical properties were evaluated by uni-axial tensile test from room temperature to high temperatures. The tensile properties, including elastic modulus, PLS and ultimate tensile strength, are superior to those of other conventional SiC/SiC composites. The macroscopic observation of Cera-NITE indicated high density as planned with almost no-porosity and cracks. Furthermore, Cera-NITE showed outstanding microstructural uniformity. The characteristic variation coming from the sampling location was hardly observed.. Further information about database of properties and microstructure at evaluated temperature will be provided. (authors)

  14. Mechanics of patterned helical Si springs on Si substrate.

    Science.gov (United States)

    Liu, D L; Ye, D X; Khan, F; Tang, F; Lim, B K; Picu, R C; Wang, G C; Lu, T M

    2003-12-01

    The elastic response, including the spring constant, of individual Si helical-shape submicron springs, was measured using a tip-cantilever assembly attached to a conventional atomic force microscope. The isolated, four-turn Si springs were fabricated using oblique angle deposition with substrate rotation, also known as the glancing angle deposition, on a templated Si substrate. The response of the structures was modeled using finite elements, and it was shown that the conventional formulae for the spring constant required modifications before they could be used for the loading scheme used in the present experiment.

  15. Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

    International Nuclear Information System (INIS)

    Olsen, S.H.; Dobrosz, P.; Escobedo-Cousin, E.; Bull, S.J.; O'Neill, A.G.

    2005-01-01

    Dual channel strained Si/SiGe CMOS architectures currently receive great attention due to maximum performance benefits being predicted for both n- and p-channel MOSFETs. Epitaxial growth of a compressively strained SiGe layer followed by tensile strained Si can create a high mobility buried hole channel and a high mobility surface electron channel on a single relaxed SiGe virtual substrate. However, dual channel n-MOSFETs fabricated using a high thermal budget exhibit compromised mobility enhancements compared with single channel devices, in which both electron and hole channels form in strained Si. This paper investigates the mobility-limiting mechanisms of dual channel structures. The first evidence of increased interface roughness due to the introduction of compressively strained SiGe below the tensile strained Si channel is presented. Interface corrugations degrade electron mobility in the strained Si. Roughness measurements have been carried out using AFM and TEM. Filtering AFM images allowed roughness at wavelengths pertinent to carrier transport to be studied and the results are in agreement with electrical data. Furthermore, the first comparison of strain measurements in the surface channels of single and dual channel architectures is presented. Raman spectroscopy has been used to study channel strain both before and after processing and indicates that there is no impact of the buried SiGe layer on surface macrostrain. The results provide further evidence that the improved performance of the single channel devices fabricated using a high thermal budget arises from improved surface roughness and reduced Ge diffusion into the Si channel

  16. Implantation of P ions in SiO{sub 2} layers with embedded Si nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Kachurin, G.A. E-mail: kachurin@isp.nsc.ru; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I

    2004-08-01

    The effect of 10{sup 13}-10{sup 16} cm{sup -2} P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO{sub 2} layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10{sup 14} cm{sup -2}, thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs.

  17. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

  18. Effects of MeV Si ions bombardment on the thermoelectric generator from SiO{sub 2}/SiO{sub 2} + Cu and SiO{sub 2}/SiO{sub 2} + Au nanolayered multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Chacha, J., E-mail: chacha_john79@hotmail.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Smith, C., E-mail: cydale@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States); Pugh, M., E-mail: marcuspughp@yahoo.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Colon, T. [Department of Mechanical Engineering, Alabama A and M University, Normal, AL (United States); Heidary, K., E-mail: kaveh.heidary@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Johnson, R.B., E-mail: barry@w4wb.com [Department of Physics, Alabama A and M University, Normal, AL (United States); Ila, D., E-mail: ila@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States)

    2011-12-15

    The defects and disorder in the thin films caused by MeV ions bombardment and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We prepared the thermoelectric generator devices from 100 alternating layers of SiO{sub 2}/SiO{sub 2} + Cu multi-nano layered superlattice films at the total thickness of 382 nm and 50 alternating layers of SiO{sub 2}/SiO{sub 2} + Au multi-nano layered superlattice films at the total thickness of 147 nm using the physical vapor deposition (PVD). Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used to determine the stoichiometry of the elements of SiO{sub 2}, Cu and Au in the multilayer films and the thickness of the grown multi-layer films. The 5 MeV Si ions bombardments have been performed using the AAMU-Center for Irradiation of Materials (CIM) Pelletron ion beam accelerator to make quantum (nano) dots and/or quantum (quantum) clusters in the multilayered superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we have measured Seebeck coefficient, cross-plane electrical conductivity, and thermal conductivity in the cross-plane geometry for different fluences.

  19. Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

    Science.gov (United States)

    Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

    2018-02-01

    As novel materials for food contact packaging, inorganic silicon oxide (SiO x ) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiO x films for food packaging it is vital to study the interaction between SiO x layers and food contaminants, as well as the function of a SiO x barrier layer in antioxidant migration resistance. In this study, we deposited a SiO x layer on polylactic acid (PLA)-based films to prepare SiO x /PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiO x /PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiO x layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiO x /PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiO x /PLA coated films increase. The SiO x barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiO x /PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

  20. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    International Nuclear Information System (INIS)

    Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

    2008-01-01

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

  1. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    Energy Technology Data Exchange (ETDEWEB)

    Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

    2008-07-30

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.

  2. Energetic prediction on the stability of A2Mg12Si7, A2Mg4Si3, and AMgSi in the A2Si–Mg2Si system (A = Ca, Sr and Ba) and their calculated electronic structures

    International Nuclear Information System (INIS)

    Imai, Yoji; Mori, Yoshihisa; Nakamura, Shigeyuki; Takarabe, Ken-ichi

    2014-01-01

    Highlights: • Formation energies of A 2 Mg 4 Si 3 , A 2 Mg 12 Si 7 , and AMgSi (A = Ca,Sr,Ba) were calculated. • All AMgSi are quite stable compared to mixture of A 2 Si and Mg 2 Si. • Ba 2 Mg 4 Si 3 and Sr 2 Mg 4 Si 3 are predicted to be stable, but Ca 2 Mg 4 Si 3 is not. • Ca 2 Mg 12 Si 7 and Sr 2 Mg 12 Si 7 are energetically unstable. • Stability of Ba 2 Mg 12 Si 7 is a tender subject. -- Abstract: In order to evaluate the relative stability of A 2 Mg 4 Si 3 , A 2 Mg 12 Si 7 , and AMgSi (A = Ca, Sr, and Ba) in the A 2 Si–Mg 2 Si system, electronic energy changes in the formation of these compounds were calculated using a density-functional theory with the Perdew–Wang generalized gradient approximations. It was found that (1) AMgSi’s are quite stable compared to equi-molar mixture of A 2 Si and Mg 2 Si, (2) Ba 2 Mg 4 Si 3 and Sr 2 Mg 4 Si 3 are also stable, (3) Ca 2 Mg 4 Si 3 and Ca 2 Mg 12 Si 7 are less stable than the mixture of CaMgSi and Mg 2 Si, and (4) Stability of Ba 2 Mg 12 Si 7 is a tender subject and Sr 2 Mg 12 Si 7 is energetically unstable compared to the mixture of Sr 2 Mg 4 Si 3 (or, SrMgSi) and Mg 2 Si. The presence of Sr 2 Mg 12 Si 7 may be due to the vibrational and/or configurational entropy, which are not treated in the present study. From the calculated electronic densities of state, complex compounds of SrMgSi and Mg 2 Si have both p-type and n-type character, depending on the ratio of SrMgSi and Mg 2 Si in that compound

  3. Palladium transport in SiC

    International Nuclear Information System (INIS)

    Olivier, E.J.; Neethling, J.H.

    2012-01-01

    Highlights: ► We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. ► The high temperature mobility of palladium silicides within polycrystalline SiC was studied. ► Corrosion of SiC by Pd was seen in all cases. ► The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. ► The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd 2 Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  4. Marker experiments in growth studies of Ni2Si, Pd2Si, and CrSi2 formed both by thermal annealing and by ion mixing

    International Nuclear Information System (INIS)

    Hung, L.S.; Mayer, J.W.; Pai, C.S.; Lau, S.S.

    1985-01-01

    Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni 2 Si, while Si is the diffusing species in CrSi 2 . In Pd 2 Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems

  5. Marbled texture of sputtered Al/Si alloy thin film on Si

    Energy Technology Data Exchange (ETDEWEB)

    Gentile, M.G. [Physics Department and NIS Interdepartmental Center, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Muñoz-Tabares, J.A.; Chiodoni, A. [Istituto Italiano di Tecnologia, Center for Space Human Robotics, Corso Trento 21, 10129 Torino (Italy); Sgorlon, C. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Para, I. [Department of Applied Science and Technology (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy); Carta, R.; Richieri, G. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Bejtka, K. [Istituto Italiano di Tecnologia, Center for Space Human Robotics, Corso Trento 21, 10129 Torino (Italy); Merlin, L. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Vittone, E. [Physics Department and NIS Interdepartmental Center, University of Torino, via P. Giuria 1, 10125 Torino (Italy)

    2016-08-01

    DC magnetron sputtering is a commonly used technique for the fabrication of silicon based electronic devices, since it provides high deposition rates and uniform large area metallization. However, in addition to the thickness uniformity, coating optical uniformity is a crucial need for semiconductor industrial processes, due to the wide use of optical recognition tools. In the silicon-based technology, aluminum is one of the most used materials for the metal contact. Both the pre-deposition substrate cleaning and the sputtering conditions determine the quality and the crystalline properties of the final Al deposited film. In this paper is shown that not all the mentioned conditions lead to good quality and uniform Al films. In particular, it is shown that under certain standard process conditions, Al/Si alloy (1% Si) metallization on a [100] Si presents a non-uniform reflectivity, with a marbled texture caused by flakes with milky appearance. This optical inhomogeneity is found to be caused by the coexistence of randomly orient Al/Si crystal, with heteroepitaxial Al/Si crystals, both grown on Si substrate. Based on the microstructural analysis, some strategies to mitigate or suppress this marbled texture of the Al thin film are proposed and discussed. - Highlights: • Sputtered Al/Si layers deposited on Si present evident optical non-uniformity • It could be an issue for optical recognition tools used in semiconductor industries • Optical non-uniformity is due to randomly oriented growth of Al grains. • Substrate misorientation and process temperature can mitigate the problem.

  6. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  7. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    KAUST Repository

    Pasha, Farhan Ahmad

    2014-07-01

    Density functional theory (DFT) was used to elucidate the mechanism of n-butane hydrogenolysis (into propane, ethane, and methane) on well-defined zirconium hydrides supported on SBA15 coordinated to the surface via N-donor surface pincer ligands: [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage. The dihydride A linked via a chelating [N,O] surface ligand was found to be more active than B, linked to the chelating [N,N] surface ligand. Moreover, the dihydride zirconium complexes are also more active than their corresponding monohydrides C-F. The C-C cleavage step occurs preferentially via β-alkyl transfer, which is the rate-limiting step in the alkane hydrogenolysis. The energetics of the comparative pathways over the potential energy surface diagram (PES) reveals the hydrogenolysis of n-butane into propane and ethane. © 2014 American Chemical Society.

  8. Sr-Al-Si co-segregated regions in eutectic Si phase of Sr-modified Al-10Si alloy.

    Science.gov (United States)

    Timpel, M; Wanderka, N; Schlesiger, R; Yamamoto, T; Isheim, D; Schmitz, G; Matsumura, S; Banhart, J

    2013-09-01

    The addition of 200 ppm strontium to an Al-10 wt% Si casting alloy changes the morphology of the eutectic silicon phase from coarse plate-like to fine fibrous networks. In order to clarify this modification mechanism the location of Sr within the eutectic Si phase has been investigated by a combination of high-resolution methods. Whereas three-dimensional atom probe tomography allows us to visualise the distribution of Sr on the atomic scale and to analyse its local enrichment, transmission electron microscopy yields information about the crystallographic nature of segregated regions. Segregations with two kinds of morphologies were found at the intersections of Si twin lamellae: Sr-Al-Si co-segregations of rod-like morphology and Al-rich regions of spherical morphology. Both are responsible for the formation of a high density of multiple twins and promote the anisotropic growth of the eutectic Si phase in specific crystallographic directions during solidification. The experimental findings are related to the previously postulated mechanism of "impurity induced twinning". Copyright © 2012 Elsevier B.V. All rights reserved.

  9. SHS synthesis of Si-SiC composite powders using Mg and reactants from industrial waste

    Science.gov (United States)

    Chanadee, Tawat

    2017-11-01

    Si-SiC composite powders were synthesized by self-propagating high-temperature synthesis (SHS) using reactants of fly ash-based silica, sawdust-based activated carbon, and magnesium. Fly ash-based silica and sawdust-based activated carbon were prepared from coal mining fly ash and Para rubber-wood sawdust, respectively. The work investigated the effects of the synthesis atmosphere (air and Ar) on the phase and morphology of the SHS products. The SHS product was leached by a two-step acid leaching processes, to obtain the Si-SiC composite powder. The SHS product and SHS product after leaching were characterized by X-ray diffractometry, scanning electron microscopy and energy dispersive X-ray spectrometry. The results indicated that the SHS product synthesized in air consisted of Si, SiC, MgO, and intermediate phases (SiO2, Mg, Mg2SiO4, Mg2Si), whereas the SHS product synthesized in Ar consisted of Si, SiC, MgO and a little Mg2SiO4. The SiC content in the leached-SHS product was higher when Ar was used as the synthesis atmosphere. As well as affecting the purity, the synthesis atmospheres also affected the average crystalline sizes of the products. The crystalline size of the product synthesized in Ar was smaller than that of the product synthesized in air. All of the results showed that fly ash and sawdust could be effective waste-material reactants for the synthesis of Si-SiC composite powders.

  10. Correlações entre as propriedades da madeira e do carvão vegetal de híbridos de eucalipto

    Directory of Open Access Journals (Sweden)

    Vássia Carvalho Soares

    2014-06-01

    Full Text Available Foram estudadas madeiras de híbridos de Eucalyptus grandis x Eucalyptus urophylla, em três idades diferentes, com o objetivo de avaliar o comportamento da madeira e do carvão vegetal produzido diante do aumento controlado de temperatura, bem como verificar a influência das características da madeira sobre o carvão vegetal. Foram realizadas análises químicas (extrativos totais, lignina, holocelulose, celulose, cinza e análise elementar e térmicas (análise termogravimétrica - TG, análise térmica diferencial - DTA e calorimetria 1,67 ºC min-1 e temperatura final de 450 ºC. No carvão vegetal produzido, foram realizadas análise imediata, elementar e térmica. A densidade básica da madeira correlacionou-se positivamente com a relação carbono/ hidrogênio (C/H e negativamente com os teores de cinza, nitrogênio, oxigênio, enxofre e relação siringil/ guaiacil (S/G. Os teores de cinza, nitrogênio, enxofre e S/G da madeira correlacionaram-se positivamente entre si e negativamente com a variável C/H da madeira. O teor de carbono fixo (TCF, o poder calorífico do carvão vegetal, o teor de carbono elementar e a relação C/H correlacionaram-se positivamente entre si e negativamente com o teor de materiais voláteis (TMV. O teor de lignina correlacionou-se positivamente com o rendimento gravimétrico em carvão (RGC e negativamente com o TCF.

  11. First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

    Science.gov (United States)

    Nagura, Takuya; Kawachi, Shingo; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Kageshima, Hiroyuki; Endoh, Tetsuo; Shiraishi, Kenji

    2018-04-01

    It is expected that the off-state leakage current of MOSFETs can be reduced by employing vertical body channel MOSFETs (V-MOSFETs). However, in fabricating these devices, the structure of the Si pillars sometimes cannot be maintained during oxidation, since Si atoms sometimes disappear from the Si/oxide interface (Si missing). Thus, in this study, we used first-principles calculations based on the density functional theory, and investigated the Si emission behavior at the various interfaces on the basis of the Si emission model including its atomistic structure and dependence on Si crystal orientation. The results show that the order in which Si atoms are more likely to be emitted during thermal oxidation is (111) > (110) > (310) > (100). Moreover, the emission of Si atoms is enhanced as the compressive strain increases. Therefore, the emission of Si atoms occurs more easily in V-MOSFETs than in planar MOSFETs. To reduce Si missing in V-MOSFETs, oxidation processes that induce less strain, such as wet or pyrogenic oxidation, are necessary.

  12. Solid-state 27Al and 29Si NMR investigations on Si-substituted hydrogarnets

    International Nuclear Information System (INIS)

    Rivas Mercury, J.M.; Pena, P.; Aza, A.H. de; Turrillas, X.; Sobrados, I.; Sanz, J.

    2007-01-01

    Partially deuterated Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x hydrates prepared by a reaction in the presence of D 2 O of synthetic tricalcium aluminate with different amounts of amorphous silica were characterized by 29 Si and 27 Al magic-angle spinning nuclear magnetic resonance (NMR) spectroscopy. The 29 Si NMR spectroscopy was used for quantifying the non-reacted silica and the resulting hydrated products. The incorporation of Si into Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x was followed by 27 Al NMR spectroscopy: Si:OH ratios were determined quantitatively from octahedral Al signals ascribed to Al(OH) 6 and Al(OSi)(OH) 5 environments. The NMR data obtained were consistent with the concentrations of the Al and Si species deduced from transmission electron microscopy energy-dispersive spectrometry and Rietveld analysis of both X-ray and neutron diffraction data

  13. Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

    International Nuclear Information System (INIS)

    Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

  14. Silicon electrodeposition from chloride-fluoride melts containing K2SiF6 and SiO2

    Directory of Open Access Journals (Sweden)

    Zhuk Sergey I.

    2017-01-01

    Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.

  15. Formation of permeation barriers on ceramic SiC/SiC composites

    International Nuclear Information System (INIS)

    Racault, C.; Fenici, P.

    1996-01-01

    The effectiveness as permeation barriers of the following CVD and PVD (sputtering) coatings has been investigated: TiC+Al 2 O 3 (CVD), SiC(CVD), SiO 2 (CVD), TiN(CVD), TiN(CVD)+TiN(PVD) and SiC(CVD)+Al 2 O 3 (PVD). The substrate material was a SiC/SiC composite, proposed as low activation structural material for fusion applications. Permeation measurements were performed in the temperature range 300-750 K using deuterium at pressures in the range 0.5-150 kPa. A linear dependence of permeation rate on pressure was measured. The efficiency of the coatings as deuterium permeation barriers is discussed in terms of coating microstructure. The best result was obtained with a bilayer of TiN(CVD) (15 μm) +TiN(PVD) (8 μm). (orig.)

  16. Physical studies of strained Si/SiGe heterostructures. From virtual substrates to nanodevices

    Energy Technology Data Exchange (ETDEWEB)

    Minamisawa, Renato Amaral

    2011-10-21

    During the past two decades, the decrease in intrinsic delay of MOSFETs has been driven by the scaling of the device dimensions. The performance improvement has relied mostly in the increase of source velocity with gate scaling, while the transport properties of the channel have remained constant, i.e., those of conventional Si. Starting at the 90 nm node, uniaxial strain has been introduced in the transistor channel in order to further increase the source velocity. Beyond the 32 nm node, novel channel materials, with superior carrier velocities, and novel device architectures are required in order to continue the performance enhancement of MOSFETs while preserving the electrostatic control. In this Thesis, different physical aspects of strained Si and SiGe materials are investigated as a mean to increase carrier velocity in MOSFET channels. Novel approaches for the fabrication of strained Si based on ion implantation and anneal induced relaxation of virtual substrates are developed. The strain relaxation of SiGe layers is improved using a buried thin Si:C layer in the Si(100) substrate. Further, a Si{sup +} ion implantation and annealing method is investigated for relaxing virtual substrates using lower implantation dose. Finally, the uniaxial relaxation of {l_brace}110{r_brace} surface oriented substrates is demonstrated using a He ion implantation and anneal technique. Apart of channel material studies, the fundamental and technological challenges involved in the integration of strained Si and SiGe into MOSFETs are assessed. The impact of source and drain formation on the elastic strain and electrical properties of strained Si layers and nanowires is examined. Also, the formation of ultra-shallow junction in strained Si/strained Si{sub 0.5}Ge{sub 0.5}/SSOI heterostructures is investigated using different types of ion implanted specie and annealing. The results show that BF{sup +}{sub 2} implantation and low temperature annealing are suitable approaches for

  17. A TEM study of strained SiGe/Si and related heteroepitaxial structures

    International Nuclear Information System (INIS)

    Benedetti, Alessandro

    2002-01-01

    The role of SiGe/Si heterostructures and related materials has become increasingly important within the last few decades. In order to increase the scale of integration, however, devices with active elements not larger than few tens of nanometer have been recently introduced. There is, therefore, a strong need for an analytical technique capable of giving information about submicron-sized components. An investigation on a nanometre scale can be performed by the combination of a fully equipped Transmission Electron Microscope (TEM) with a Field Emission Gun (PEG) electron source, which enables one to use a wide range of analytical techniques with an electron probe as small as 0.5 nm. In this work, two different types of SiGe/Si-based devices were investigated. Strained-Si n-channel MOSFETs. The use of Strained-Si n-channel grown on SiGe should improve both carrier mobility and transconductance with respect to conventional MOSFETs. Materials analysed in this work showed an extremely high transconductance but a rather low mobility. In order to relate their microstructural properties to their electrical performance, as well as to improve the device design, a full quantitative and qualitative structural characterisation was performed. SiGe Multiple Quantum Wells (MQW) IR detectors Light detection is achieved by collecting the photogenerated carriers, injected from the SiGe QWs layers into the Si substrate. A key factor is the Ge profile across a single QW, since it governs the band structure and therefore the device performances. Four different TEM techniques were used to determine the Ge distribution across a single well, showing an overall good agreement among the results. The Ge profiles broadening, consistent with data available in literature, was successfully explained and theoretically predicted by the combined effect of Ge segregation and gas dwell times within the reactor. (author)

  18. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Science.gov (United States)

    Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

    2014-08-01

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  19. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Energy Technology Data Exchange (ETDEWEB)

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Heidary, K. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Johnson, R.B.; Colon, T. [Department of Physics, Alabama A and M University, Huntsville, AL (United States); Muntele, C. [Cygnus Scientific Services, Huntsville, AL (United States); Ila, D. [Department of Physics, Fayetteville St. University, Fayetteville, NC (United States)

    2014-08-15

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S{sup 2}σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  20. Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

    Science.gov (United States)

    Pramann, Axel; Rienitz, Olaf

    2016-06-07

    A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) < 1 × 10(-9). This study presents a clear dependence of the uncertainty urel(M(Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram.

  1. Positron annihilation in SiO 2-Si studied by a pulsed slow positron beam

    Science.gov (United States)

    Suzuki, R.; Ohdaira, T.; Uedono, A.; Kobayashi, Y.

    2002-06-01

    Positron and positronium (Ps) behavior in SiO 2-Si have been studied by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The PALS study of SiO 2-Si samples, which were prepared by a dry-oxygen thermal process, revealed that the positrons implanted in the Si substrate and diffused back to the interface do not contribute to the ortho-Ps long-lived component, and the lifetime spectrum of the interface has at least two components. From the AMOC study, the momentum distribution of the ortho-Ps pick-off annihilation in SiO 2, which shows broader momentum distribution than that of crystalline Si, was found to be almost the same as that of free positron annihilation in SiO 2. A varied interface model was proposed to interpret the results of the metal-oxide-semiconductor (MOS) experiments. The narrow momentum distribution found in the n-type MOS with a negative gate bias voltage could be attributed to Ps formation and rapid spin exchange in the SiO 2-Si interface. We have developed a two-dimensional positron lifetime technique, which measures annihilation time and pulse height of the scintillation gamma-ray detector for each event. Using this technique, the positronium behavior in a porous SiO 2 film, grown by a sputtering method, has been studied.

  2. Asociación entre el precio de los alimentos y la glucemia en adultos estadounidenses con diabetes de tipo 2

    Directory of Open Access Journals (Sweden)

    Tobenna D. Anekwé

    2015-06-01

    Full Text Available OBJETIVOS: Calculamos la asociación entre el precio de diversas categorías de alimentos saludables y menos saludables y la glucemia en adultos estadounidenses con diabetes de tipo 2. MÉTODOS: Vinculamos la información de salud contenida en la Encuesta Nacional de Salud y Nutrición 1999-2006 y el precio de los alimentos a partir de la base trimestral de datos de precios de los alimentos. Aplicamos una regresión de los valores de glucemia con respecto al precio de los alimentos en el trimestre anterior, con control de la región del mercado y otras covariables. Examinamos asimismo si la asociación entre el precio de los alimentos y la glucemia variaba entre distintos grupos de ingresos. RESULTADOS: Tanto el precio de las frutas y verduras como el precio de los productos lácteos magros se asocian a la glucemia en las personas con diabetes de tipo 2. En concreto, un precio mayor de las frutas y verduras y de los productos lácteos se asocia a valores más altos de glu-cohemoglobina y de glucemia en ayunas tres meses después. La asociación entre el precio de los alimentos y la glucemia es mayor en las personas de ingresos bajos que en las de ingresos elevados, en la dirección esperada. CONCLUSIONES: Un precio mayor de los alimentos saludables se asocia a cifras más elevadas de glucemia en las personas con diabetes de tipo 2. Esta asociación fue especialmente pronunciada en las personas con diabetes de tipo 2 con ingresos bajos.

  3. SiC/SiC composite fabricated with carbon nanotube interface layer and a novel precursor LPVCS

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuang, E-mail: zhsh6007@126.com [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Zhou, Xingui; Yu, Jinshan [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); Mummery, Paul [School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2014-02-15

    Highlights: • The CNTs were distributed uniformly on the SiC fibers in the fabric by CVD process. • The microstructural evolution of the CNTs interface coating was studied. • The closed porosity was investigated by X-ray tomography. • The liquid precursor LPVCS exhibited high densification efficiency. - Abstract: Continuous SiC fiber reinforced SiC matrix composites (SiC/SiC) have been studied as promising candidate materials for nuclear applications. Three-dimensional SiC/SiC composite was fabricated via polymer impregnation and pyrolysis (PIP) process using carbon nanotubes (CNTs) as the interface layer and LPVCS as the polymer precursor. The microstructural evolution of the fiber/matrix interface was studied. The porosity, mechanical properties, thermal and electrical conductivities of the SiC/SiC composite were investigated. The results indicated that the high densification efficiency of the liquid precursor LPVCS resulted in a low porosity of the SiC/SiC composite. The SiC/SiC composite exhibited non-brittle fracture behavior, however, bending strength and fracture toughness of the composite were relatively low because of the absence of CNTs as the interface layer. The thermal and electrical conductivities of the SiC/SiC composite were low enough to meet the requirements desired for flow channel insert (FCI) applications.

  4. Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi2/n-Si heterojunction solar cells

    Directory of Open Access Journals (Sweden)

    Ryota Takabe

    2016-08-01

    Full Text Available Fabrication of p-BaSi2(20nm/n-Si heterojunction solar cells was performed with different a-Si capping layer thicknesses (da-Si and varying air exposure durations (tair prior to the formation of a 70-nm-thick indium-tin-oxide electrode. The conversion efficiencies (η reached approximately 4.7% regardless of tair (varying from 12–150 h for solar cells with da-Si = 5 nm. In contrast, η increased from 5.3 to 6.6% with increasing tair for those with da-Si = 2 nm, in contrast to our prediction. For this sample, the reverse saturation current density (J0 and diode ideality factor decreased with tair, resulting in the enhancement of η. The effects of the variation of da-Si (0.7, 2, 3, and 5 nm upon the solar cell performance were examined while keeping tair = 150 h. The η reached a maximum of 9.0% when da-Si was 3 nm, wherein the open-circuit voltage and fill factor also reached a maximum. The series resistance, shunt resistance, and J0 exhibited a tendency to decrease as da-Si increased. These results demonstrate that a moderate oxidation of BaSi2 is a very effective means to enhance the η of BaSi2 solar cells.

  5. CONTROLE DE SI, DOR E REPRESENTAÇÃO FEMININA ENTRE LUTADORES(AS DE MIXED MARTIAL ARTS (MMA

    Directory of Open Access Journals (Sweden)

    Samuel Oliveira Thomazini

    2008-12-01

    Full Text Available This papers aims to present results of a seven months ethnographic research in three gyms of Mixed Marcial Arts (MAA, focusing the identity construction of the fighters. Observations and interviews were done, as well as pictures and film takes in traing ans competition were also important. The results suggest the existence of bioidentities processes in sense of selfcontrol and rationalization of pain. The representations of the presence of females is quite ambiguous in this universe of masculinity. La investigación se ocupó de tres gimnasios especializados en Mixed Marcial Arts (MAA, analizando rasgos esenciales de la construcción de las identidades de luchadores y luchadoras. Fueran hecahs durante siete meses observaciones participantes (registradas en diario de campo y entrevistas semi-dirigidas. Fotos y filmages de entrenamientos y competiciones fueran también importantes. Los resultados sugieren la presencia de procesos bioidentitários vinculados al control de si mismo, a la racionalización del dolor y, además, representaciones ambiguas sobre la presencia femenina en este universo que es sobretodo masculino. Trata-se de uma pesquisa realizada em três academias especializadas em Mixed Marcial Arts (MMA. Analisa alguns elementos indispensáveis à forja identitária de lutadores(as desta modalidade. A etnografia durou sete meses, oportunidade para combinar uma observação participante (devidamente registrada no diário de notas com a realização de entrevistas semi-estruturadas com os(as atletas. Fotografias e filmagens dos locais de treinamento e de competição foram recursos metodológicos também úteis. Os resultados indicam a existência de processos bioidentitários vinculados ao controle de si e à racionalização da dor, apontando, além disso, para uma representação ambígua em relação à presença feminina em um universo ainda predominantemente masculino.

  6. Redes de conectividad entre empresas tecnológicas a través de un análisis métrico longitudinal de menciones de usuario en Twitter

    Directory of Open Access Journals (Sweden)

    Azorín-Richarte, David

    2016-09-01

    Full Text Available The main objective of this work is to identify and describe (through a cybermetric analysis of user mentions the intensity and evolution of the relationships between companies in a particular industry (technology through their corresponding corporate Twitter accounts, with the purpose of checking the value that a metric analysis like this may offer for determining the web connectivity between these companies. For this purpose, we have quantified the number of mentions, both direct (MT and ReTweets (RT, between the Twitter accounts of a sample of 50 international companies during a period of six months. The results indicate that the degree of interaction among the 50 technology companies is weak (whether we count the number of connections established or quantify the strength of these connections, stable, concentrated in a few specific relations, and sharply asymmetrical. Given the low interactivity found, we conclude that the corporate Twitter accounts of technology companies are not sufficient for analyzing the web connectivity established between them from a metric viewpoint, although they are useful for understanding the official communication policies between them.El objetivo principal de este trabajo es identificar y describir (mediante un análisis cibermétrico de menciones de usuario la intensidad y evolución de las relaciones establecidas entre compañías de un determinado sector industrial (tecnología a través de sus correspondientes cuentas corporativas de Twitter, con el propósito de comprobar el valor que un análisis métrico de estas características puede tener a la hora de determinar la conectividad entre dichas compañías. Para ello se han contabilizado las menciones, tanto directas (MT como ReTweets (RT, entre las cuentas de Twitter de una muestra de 50 compañías internacionales durante un período de seis meses. Los resultados indican que el grado de interacción entre las 50 empresas tecnológicas es débil (tanto si

  7. Palladium transport in SiC

    Energy Technology Data Exchange (ETDEWEB)

    Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. Black-Right-Pointing-Pointer The high temperature mobility of palladium silicides within polycrystalline SiC was studied. Black-Right-Pointing-Pointer Corrosion of SiC by Pd was seen in all cases. Black-Right-Pointing-Pointer The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. Black-Right-Pointing-Pointer The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd{sub 2}Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  8. Moessbauer and channeling experiments on TeSi and SmSi

    International Nuclear Information System (INIS)

    Kemerink, G.J.; Boerma, D.O.; Waard, H. de; Wit, J.C. de; Drentje, S.A.

    1980-01-01

    Considerable effort is made to obtain an insight in the structural and electronic properties of ion implanted elemental semiconductors. This research is strongly stimulated by the many applications of semi-conductor devices. We report here on Moessbauer studies of 129 TeSi and 153 SmSi, using the 27.8 keV transition in 129 I and the 103.2 keV transition in 153 Eu, respectively, and on channeling experiments on 128 TeSi and 152 SmSi with a 2 MeV α-beam from the Groningen Van de Graaff generator. In the Moessbauer experiments we used Cu 129 I and EuF 3 .1/2H 2 O as absorber materials. Source and absorber were held at 4.2 K. The implantations were generally done at room temperature with an implantation energy of 100-115 keV. For the Moessbauer and channeling measurements we applied similar Si single crystals and the same implantation and annealing conditions. Crystals with low doses could only be investigated with the Moessbauer effect

  9. Light emissions from LiNbO sub 3 /SiO sub 2 /Si structures

    CERN Document Server

    Wu, X L; Tang, N; Deng, S S; Bao, X M

    2003-01-01

    LiNbO sub 3 (LN) films with a high degree of (006) texture were deposited on Si-based dense SiO sub 2 layers by pulsed laser deposition. After annealing, the LN/SiO sub 2 /Si structures were revealed to have ultraviolet-, green-, and red-emitting properties related to self-trapped excitons and E' defect pairs in the SiO sub 2 surface, which are induced by the photorefractive effect of the LN films. The emission wavelength can be tuned by introducing different dopants into the LN films. Waveguiding properties of the structures were demonstrated. The results obtained indicate that the LN/SiO sub 2 /Si structures could be expected to have important applications in modern optoelectronic integration. (letter to the editor)

  10. Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

    International Nuclear Information System (INIS)

    Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

    2013-01-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

  11. β-FeSi2 films prepared on 6H-SiC substrates by magnetron sputtering

    Science.gov (United States)

    Hong, Li; Hongbin, Pu; Chunlei, Zheng; Zhiming, Chen

    2015-06-01

    β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of β-FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to β-FeSi2 phase as the annealing temperature is increased from 500 to 900 °C for 5 min and the optimal annealing temperature is 900 °C. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is flat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the β-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 °C for 5 min. Project supported by the National Natural Science Foundation of China (No. 51177134) and the Natural Science Basic Research Plan in Shaanxi Province of China (No. 2015JM6286).

  12. Specimen size effect considerations for irradiation studies of SiC/SiC

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-10-01

    For characterization of the irradiation performance of SiC/SiC, limited available irradiation volume generally dictates that tests be conducted on a small number of relatively small specimens. Flexure testing of two groups of bars with different sizes cut from the same SiC/SiC plate suggested the following lower limits for flexure specimen number and size: Six samples at a minimum for each condition and a minimum bar size of 30 x 6.0 x 2.0 mm{sup 3}.

  13. La divergencia genética entre poblaciones del Área Andina Centro Meridional evaluada mediante rasgos no métricos del cráneo

    Directory of Open Access Journals (Sweden)

    Cocilovo, José Alberto

    2009-01-01

    Full Text Available Durante más de 10.000 años el Area Andina Centro Meridional proporcionó un escenario ideal para el desarrollo de distintas poblaciones y entidades culturales, interactuando a través de una amplia red de intercambio y distribución de productos. A pesar de este nivel de interacción, la información métrica disponible (Bolivia, Norte de Chile y Noroeste Argentino, reveló un fuerte proceso de divergencia genética (FST = 0.195 entre subregiones (Varela et al., 2008. Esta evidencia es contrastada en el presente trabajo a partir del análisis de una muestra integrada por 1416 individuos de ambos sexos, cubriendo un intervalo de 4.500 años. Se emplearon 12 atributos (rasgos no métricos del cráneo registrados como presencia-ausencia. Las diferencias entre subáreas fueron evaluadas mediante la estadística MMDS y D2 de Mahalanobis calculada a partir de componentes principales. Ambas matrices de distancias fenotípicas presentaron una alta correlación, destacando una significativa diferenciación a nivel regional. La mayor distancia se registra entre el Noroeste Argentino y el Norte de Chile, ocupando Bolivia una posición equidistante entre ambas regiones. Dentro de cada región las muestras están más relacionadas entre si ((Cochabamba, (Puna, Quebrada, Valliserrana y Pampa Grande, (Arica, Pisagua, Norte Semiárido. Hay mayor vinculación entre Cochabamba y el Noroeste Argentino y mayor divergencia entre los grupos de Chile. Se confi rma un modelo de poblamiento a partir de la subdivisión de una población ancestral en dos ramas que ocuparon: una el Norte de Chile y otra el Noroeste Argentino. En cada una de ellas el proceso dispersivo originó varias líneas que se diferenciaron gradualmente hacia el sur, durante la exploración de nuevos ambientes cuya conquista y colonización garantizó la subsistencia de la población.

  14. Estudio de viabilidad para la ejecución de un aparcamiento subterráneo entre las calles Ciudad de Granada, Bolivia y Badajoz de Barcelona

    OpenAIRE

    Domínguez Quinoya, Inmaculada

    2014-01-01

    Este trabajo, punto final a los estudios de Ciencias y Tecnología de Edificación, pretende aplicar todos los conocimientos adquiridos en estos cuatro años en un proyecto concreto y real. Se trata de confirmar o negar la viabilidad de la construcción de un aparcamiento subterráneo en un solar situado entre las calles Ciudad de Granada, Bolivia y Badajoz de Barcelona. 1.- VIABILIDAD EN EL TERRITORIO: Empezamos conociendo la zona donde se ubica el aparcamiento, estudiando si ex...

  15. Analysis on the sequence of formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Radhakrishnan, R.; Bhaduri, S.B. [Idaho Univ., Moscow, ID (United States). Dept. of Mining and Metallurgy; Henager, C.H. Jr. [Pacific Northwest Lab., Richland, WA (United States)

    1995-05-01

    Ti{sub 3}SiC{sub 2}, a compound in the ternary Ti-Si-C system, is reported to be ductile. This paper reports the sequence of formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites involving either combustion synthesis or by displacement reaction, respectively. Onset of exothermic reaction temperatures were determined using Differential Thermal Analysis (DTA). Phases present after the exothermic temperatures were analyzed by X-Ray diffraction. Based on these observations, a route to formation of Ti{sub 3}SiC{sub 2} and Ti{sub 3}SiC{sub 2}/SiC composites is proposed for the two`s thesis methods.

  16. X-ray absorption spectroscopy study on SiC-side interface structure of SiO2–SiC formed by thermal oxidation in dry oxygen

    Science.gov (United States)

    Isomura, Noritake; Kosaka, Satoru; Kataoka, Keita; Watanabe, Yukihiko; Kimoto, Yasuji

    2018-06-01

    Extended X-ray absorption fine structure (EXAFS) spectroscopy is demonstrated to measure the fine atomic structure of SiO2–SiC interfaces. The SiC-side of the interface can be measured by fabricating thin SiO2 films and using SiC-selective EXAFS measurements. Fourier transforms of the oscillations of the EXAFS spectra correspond to radial-structure functions and reveal a new peak of the first nearest neighbor of Si for m-face SiC, which does not appear in measurements of the Si-face. This finding suggests that the m-face interface could include a structure with shorter Si–C distances. Numerical calculations provide additional support for this finding.

  17. Investigation on fabrication of SiC/SiC composite as a candidate material for fuel sub-assembly

    International Nuclear Information System (INIS)

    Lee, Jae-Kwang; Naganuma, Masayuki; Park, Joon-Soo; Kohyama, Akira

    2005-01-01

    The possibility of SiC/SiC (Silicon carbide fiber reinforced Silicon carbide) composites application for fuel sub-assembly of Fast Breeder Reactor was investigated. To select a raw material of SiC/SiC composites, a few kinds of SiC nano powder was estimated by SEM observation and XRD analysis. Furthermore, SiC monolithic was sintered from them and estimated by flexural test. SiC nano-powder which showed good sinterability, it was used for fabrication of SiC/SiC composites by Hot Pressing method. From the sintering condition of 1800, 1820degC temperature and 15, 20 MPa pressure, SiC/SiC composite was fabricated and then estimated by tensile test. SiC/SiC composite, which made by 1820degC and 20 MPa condition, showed the highest mechanical strength by the monotonic tensile test. SiC/SiC composite, which made by 1800degC and 15 MPa condition, showed a stable fracture behavior at the monotonic and cyclic tensile test. And then, the hoop stress of ideal model of SiC/SiC composites was discussed. It was confirmed that applicability of SiC/SiC composites by Hot Pressing method for fuel sub-assembly structural material. To make it real attractive one, to maintain the reliability and safety as a high temperature structural material, the design and process study on SiC/Sic composites material will be continued. (author)

  18. Phenomenological inelastic constitutive equations for SiC and SiC fibers under irradiation

    International Nuclear Information System (INIS)

    El-Azab, A.; Ghoniem, N.M.

    1994-01-01

    Experimental data on irradiation-induced dimensional changes and creep in β-SiC and SiC fibers is analyzed, with the objective of studying the constitutive behavior of these materials under high-temperature irradiation. The data analysis includes empirical representation of irradiation-induced dimensional changes in SiC matrix and SiC fibers as function of time and irradiation temperature. The analysis also includes formulation of simple scaling laws to extrapolate the existing data to fusion conditions on the basis of the physical mechanisms of radiation effects on crystalline solids. Inelastic constitutive equations are then developed for SCS-6 SiC fibers, Nicalon fibers and CVD SiC. The effects of applied stress, temperature, and irradiation fields on the deformation behavior of this class of materials are simultaneously represented. Numerical results are presented for the relevant creep functions under the conditions of the fusion reactor (ARIES IV) first wall. The developed equations can be used in estimating the macro mechanical properties of SiC-SiC composite systems as well as in performing time-dependent micro mechanical analysis that is relevant to slow crack growth and fiber pull-out under fusion conditions

  19. Si cycling in a forest biogeosystem - the importance of transient state biogenic Si pools

    Science.gov (United States)

    Sommer, M.; Jochheim, H.; Höhn, A.; Breuer, J.; Zagorski, Z.; Busse, J.; Barkusky, D.; Meier, K.; Puppe, D.; Wanner, M.; Kaczorek, D.

    2013-07-01

    The relevance of biological Si cycling for dissolved silica (DSi) export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi) might contribute > 50% to DSi (Gerard et al., 2008). However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%). Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007-04/2011), we quantified (i) internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr) by BIOME-BGC (version ZALF), (ii) related Si budgets, and (iii) Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae). We quantified an average Si plant uptake of 35 kg Si ha-1 yr-1 - most of which is recycled to the soil by litterfall - and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha-1. The comparatively high DSi concentrations (6 mg L-1) and DSi exports (12 kg Si ha-1 yr-1) could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

  20. Low thermal budget surface preparation of Si and SiGe

    International Nuclear Information System (INIS)

    Abbadie, A.; Hartmann, J.M.; Holliger, P.; Semeria, M.N.; Besson, P.; Gentile, P.

    2004-01-01

    Using a two-step cleaning, we have investigated the low thermal budget surface preparation of Si and Si 1-x Ge x (x=0.2-0.33). It consists of an ex situ 'HF-last' wet-cleaning and an in situ low thermal budget H 2 bake in a reduced pressure-chemical vapor deposition reactor. Using secondary ion mass spectrometry, we have evaluated the effects of different H 2 bake temperatures (in between 750 and 850 deg. C for 2 min) on the removal efficiency of C, O and F atoms still present on the surface of Si and SiGe virtual substrates after the 'HF-last' wet-cleaning. We have then examined the impact of the (wet-cleaning+H 2 bake) combination on the surface cross-hatch of SiGe as-grown virtual substrates, focusing on the analysis, notably by atomic force microscopy, of the surface topography before and after the miscellaneous thermal treatments. In situ hydrogen baking steps in between 775 and 850 deg. C do not modify the surface morphology and roughness. An easy and rapid optical characterization method, i.e. the optical interferometry, is presented as well to monitor in line the morphological changes induced by such processing steps as chemical mechanical polishing, wet-cleaning, H 2 bake, etc. Despite the lower resolution of the optical profilometer, the surface roughness values coming from it have been correctly correlated with those obtained from AFM. An optimized 'HF-last' wet-cleaning using a diluted chemistry in conjunction with a H 2 bake at 800 deg. C for 2 min (775 deg. C, 2') is a good compromise for SiGe (Si) surface preparation

  1. A distinção entre o sentido negativo e positivo da liberdade na Fundamentação da Metafísica dos Costumes

    OpenAIRE

    Hipolito, Marco André de Freitas

    2011-01-01

    O presente trabalho pretende analisar a distinção entre o conceito de liberdade em sentido negativo e o de liberdade em sentido positivo, enfatizando, também, os conceitos que Kant utiliza para fundamentar a moral sob a idéia da liberdade em sentido positivo. No primeiro capítulo analisamos a tese kantiana de que somente mediante uma boa vontade haveria a possibilidade de agir moralmente. A boa vontade é tida por Kant como um princípio do querer, que deve ser determinado por si...

  2. Formation of ferromagnetic interface between β-FeSi2 and Si(111) substrate

    International Nuclear Information System (INIS)

    Hattori, Azusa N.; Hattori, Ken; Kodama, Kenji; Hosoito, Nobuyoshi; Daimon, Hiroshi

    2007-01-01

    Epitaxial β-FeSi 2 thin films were grown on Si(111)7x7 clean surfaces by solid phase epitaxy in ultrahigh vacuum: iron deposition at low temperature and subsequent annealing. We found that a ferromagnetic interface layer of iron-rich silicides forms between a β-FeSi 2 surface layer and a Si(111) substrate spontaneously from transmission electron microscopy observations and magnetization measurements

  3. Correlación entre actitud hacia homosexualidad femenina y masculina en estudiantes de Medicina/ Correlation between the attitude toward female and male homosexuality in medical

    Directory of Open Access Journals (Sweden)

    Adalberto Campo-Arias

    2017-04-01

    Full Text Available Este artículo es resultado de una investigación cuyo objetivo fue explorar la correlación cuantitativa entre homofobia y lesbofobia en estudiantes de medicina de una universidad de Bogotá, Colombia. El estudio transversal se llevó a cabo con estudiantes de medicina mayores de 18 años. La homofobia y la lesbofobia se midieron con la Escala para Actitud hacia Gais y Lesbianas (ATGL. La ATGL se compone de dos escalas de diez ítems: Escala para Actitud hacia Hombres Gais (ATG y la Escala para Actitud hacia Mujeres Lesbianas (ATL. La correlación entre puntuaciones para homofobia y lesbofobia se calculó con coeficiente de Pearson (r. Se planteó la hipótesis de que homofobia y lesbofobia eran diferentes construcciones si la correlación entre las escalas era inferior a 0,60. Un total de 359 estudiantes de medicina participaron en la investigación, la media para la edad fue de 20,2 años (DE=1,9, y el 59,1% eran mujeres. Las puntuaciones en la ATG (alfa de Cronbach de 0,85 se observaron entre 10 y 50, con una media de 27,9 (DE=8,1 y en la ATL (alfa de Cronbach de 0,73 entre 10 y 45, con media de 24,8 (DE=6,8. La correlación entre homofobia (ATG y lesbofobia (ATL fue r=0,64 (p<0,001. Se concluye que la ATG y ATL muestran correlación altamente significativa, lo que sugiere que homofobia y lesbofobia no son constructos completamente diferentes y podrían incluirse en el concepto general de prejuicio sexual. Otras investigaciones deben corroborar el presente hallazgo.

  4. Supervisión de Prácticas en el Hospital de Enseñanza pública: tensión entre saberes y temporalidades

    Directory of Open Access Journals (Sweden)

    Edna Maria Goulart JOAZEIRO

    2011-04-01

    Full Text Available O Hospital de Ensino, como as demais áreas do campo da saúde, é um espaço social complexo, saturado de normas, saberes, tecnologia, relações de poder e de constante contato com o “objeto” vida/morte. Nele, a luta pela defesa da vida está em tensão permanente com a heterogeneidade da estrutura epidemiológica, com a ampliação da demanda e com o agravamento das múltiplas expressões da questão social que marcam a vida na sociedade moderna. Nesse meio, a formação para o trabalho das diversas profissões é marcada pelo encontro/confronto com diversas lógicas, saberes e temporalidades. O artigo analisa o encontro entre experiência e conhecimento que se realiza na atividade do supervisor de campo de estudantes-estagiários durante o estágio supervisionado em Serviço Social no hospital de ensino público. Enfatiza que, como nas demais profissões da saúde, o supervisor de estágio enfrenta o desafio de fazer da atividade de trabalho o locus onde ensina a cuidar da vida do outro. Utilizando as ferramentas conceituais da Ergologia - ECRP, corpo-si, dramáticas do uso de si - coloca em discussão a concepção vigente do estágio como “campo de treinamento” por julgá-la herdeira de outra lógica, a do trabalho como execução. Explicita a relação de interdependência e de indissociabilidade entre os conhecimentos da disciplina epistêmica (polo 1, da disciplina ergológica (polo 2 e a tensão permanente entre os valores semdimensão e os dimensionáveis (polo 3. Aponta que na atividade de supervisão, os saberes de natureza híbrida são tensionados por diversas temporalidades que circulam nesse ECRP.

  5. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo

    2018-02-28

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.

  6. L’histoire entre la guerre des mémoires et la Justice

    Directory of Open Access Journals (Sweden)

    François Dosse

    2017-07-01

    Full Text Available La question se pose de savoir si la Justice est capable de réparer le tragique de l’histoire. François Dosse situe son analyse sur l’axe pragmatique de la préoccupation citoyenne exprimée par Ricœur, dès les premières lignes de La mémoire, l’histoire, l’oubli, lorsqu’il se dit troublé par le trop de mémoire ici et le trop d’oubli ailleurs. On assiste en effet à une judiciarisation progressive de la discipline historique. Elle se traduit par une inquiétante inflation mémorielle depuis la loi Gayssot de 1990. La fonction du juge et de l’historien a certes des points communs, comme l’a montré Marc Bloch dans Apologie pour l’histoire ou Carlo Ginzburg dans Le juge et l’historien. Le juge d’instruction peut s’apparenter à l’historien, mais pas celui du siège qui doit rendre un jugement. Cette emprise progressive de la justice sur le passé a pour effet pervers une tentative de sanctuarisation des questions historiques. Ricœur nous aide à repenser les relations entre justice, histoire et mémoire en distinguant et en articulant ces diverses dimensions par un travail de clarification des concepts. Il permet de mieux articuler la fonction judiciaire, le travail de mémoire et l’opération historiographique en respectant la validité de chacune de ces dimensions.

  7. Metastability of a-SiO{sub x}:H thin films for c-Si surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Serenelli, L., E-mail: luca.serenelli@enea.it [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Martini, L. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Imbimbo, L. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Asquini, R. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Menchini, F.; Izzi, M.; Tucci, M. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy)

    2017-01-15

    Highlights: • a-SiO{sub x}:H film deposition by RF-PECVD is optimized from SiH{sub 4}, CO{sub 2} and H{sub 2} gas mixture. • Metastability of a-SiO{sub x}:H/c-Si passivation is investigated under thermal annealing and UV exposure. • A correlation between passivation metastability and Si−H bonds is found by FTIR spectra. • A metastability model is proposed. - Abstract: The adoption of a-SiO{sub x}:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiN{sub x} on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiO{sub x}:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Si−H and Si−O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm{sup 2}. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiO{sub x}:H/c-Si/a-SiO{sub x}:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiO{sub x} passivation properties, was furthermore considered. In

  8. Determinantes de la precarización laboral en Argentina entre 2003-2013: entre los cambios y las continuidades

    Directory of Open Access Journals (Sweden)

    Marcelo Delfini

    2016-03-01

    Full Text Available El crecimiento económico experimentado por Argentina desde 2003 ha tenido su correlato en la mejora de los indicadores laborales. No obstante, la precarización laboral se ha mantenido, luego de una baja importante hasta el año 2007, en valores muy elevados. Partiendo de la idea central que la precarización constituye para el capital, una reducción de costos, el objetivo de este artículo es dar cuenta de los determinantes de la informalidad entre los trabajadores asalariados, estableciendo continuidades y cambios entre los años 2003 y 2013. Para ello utilizamos una metodología cuantitativa con fuentes secundarias de información, a partir de las cuales realizamos dos tipo de análisis, el primero de carácter descriptivo a partir del cual se busca dar cuenta de las características del mercado de trabajo argentino entre 1990 y 2013 y el segundo se realiza por medio de una regresión logística binomial, que permite acercarnos a los determinantes de la precarización de las condiciones de trabajo. En este sentido, se pudo observar que entre los años 2003 y 2013, se consolidó una precarización laboral, cuyos determinantes no lograron modificarse sustancialmente entre los años de referencia.

  9. Control of the graphene growth rate on capped SiC surface under strong Si confinement

    International Nuclear Information System (INIS)

    Çelebi, C.; Yanık, C.; Demirkol, A.G.; Kaya, İsmet İ.

    2013-01-01

    Highlights: ► Graphene is grown on capped SiC surface with well defined cavity size. ► Graphene growth rate linearly increases with the cavity height. ► Graphene uniformity is reduced with thickness. - Abstract: The effect of the degree of Si confinement on the thickness and morphology of UHV grown epitaxial graphene on (0 0 0 −1) SiC is investigated by using atomic force microscopy and Raman spectroscopy measurements. Prior to the graphene growth process, the C-face surface of a SiC substrate is capped by another SiC comprising three cavities on its Si-rich surface with depths varying from 0.5 to 2 microns. The Si atoms, thermally decomposed from the sample surface during high temperature annealing of the SiC cap /SiC sample stack, are separately trapped inside these individual cavities at the sample/cap interface. Our analyses show that the growth rate linearly increases with the cavity height. It was also found that stronger Si confinement yields more uniform graphene layers.

  10. Enriquecimiento en Si mediante PVD de chapas magnéticas convencionales para aplicaciones a altas frecuencias

    Directory of Open Access Journals (Sweden)

    Molina Aldareguía, J.

    2000-06-01

    Full Text Available The present work deals with the viability of a method for Si enrichment of conventional Fe-3%Si sheets, by means of physical vapour deposition of Si at its surface and subsequent diffusion heating. The aim is to obtain magnetic sheets with a Si content of 6.5wt%, for they show higher resistivity and null magnetostriction, leading to lower energy losses and solving the noise problems at high frequencies. The PVD deposited films, with ~5 μm thickness, show good adhesion to the substrate. Concerning the heat treatment, there is a critical heating rate between 5 and 15°/min, above which delamination of the film is observed without formation of intermetallics at the interface. At 3°/min the conditions for the formation of intermetallics are given. Direct heating up to 800°C leads to the formation of a Fe3Si(α1 surface layer, which, being brittle, does not delaminate during the heating process. Subsequent heating up to temperatures around 1200°C allows the homogenisation of the sheet composition. There is evidence of Kirkendall effect in the diffusion couple Fe3Si(α1/Fe(α, due to the fact that the diffusion of Fe in Fe3Si(α1 is faster than the diffusion of Si in Fe(α.

    El presente trabajo estudia la viabilidad de un método para enriquecer en Si chapas de Fe-3%Si convencionales, depositando Si en su superficie mediante PVD y sometiéndolas a un tratamiento térmico de difusión. Se trata de obtener chapas magnéticas con un contenido en Si de un 6,5% en peso, ya que éstas presentan mayor resistividad y magnetoestricción nula, reduciendo las pérdidas y solucionando los problemas de ruido a altas frecuencias. Las capas depositadas por PVD, de espesores ~5 μm, presentan buena adherencia al substrato. En cuanto al tratamiento térmico, se observa que hay una velocidad de calentamiento crítica entre 5 y 15°/min, por encima de la cual la película se despega sin llegarse a formar intermetálicos en la intercara. A 3°/min se dan las

  11. C/SiC/MoSi2-Si multilayer coatings for carbon/carbon composites for protection against oxidation

    International Nuclear Information System (INIS)

    Zhang Yulei; Li Hejun; Qiang Xinfa; Li Kezhi; Zhang Shouyang

    2011-01-01

    Highlights: → A C/SiC/MoSi 2 -Si multilayer coating was prepared on C/C by slurry and pack cementation. → Multilayer coating can protect C/C for 300 h at 1873 K or 103 h at 1873 K in air. → The penetration cracks in the coating result in the weight loss of the coated C/C. → The fracture of the coated C/C in wind tunnel result from the excessive local stress. - Abstract: To improve the oxidation resistance of carbon/carbon (C/C) composites, a C/SiC/MoSi 2 -Si multilayer oxidation protective coating was prepared by slurry and pack cementation. The microstructure of the as-prepared coating was characterized by scanning electron microscopy, X-ray diffraction and energy dispersive spectroscopy. The isothermal oxidation and erosion resistance of the coating was investigated in electrical furnace and high temperature wind tunnel. The results showed that the multilayer coating could effectively protect C/C composites from oxidation in air for 300 h at 1773 K and 103 h at 1873 K, and the coated samples was fractured after erosion for 27 h at 1873 K h in wind tunnel. The weight loss of the coated specimens was considered to be caused by the formation of penetration cracks in the coating. The fracture of the coated C/C composites might result from the excessive local stress in the coating.

  12. Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting.

    Science.gov (United States)

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco

    2016-02-07

    We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ∼20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

  13. Precipitation kinetics of Al-1.12 Mg{sub 2}Si-0.35 Si and Al-1.07 Mg{sub 2}Si-0.33 Cu alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gaber, A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Gaffar, M.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)]. E-mail: mgaafar@aucegypt.edu; Mostafa, M.S. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Zeid, E.F. Abo [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

    2007-02-21

    The kinetics of hardening precipitates of Al-1.12 wt.% Mg{sub 2}Si-0.35 wt.% Si (excess Si) and Al-1.07 wt.% Mg{sub 2}Si-0.33 wt.% Cu (balanced + Cu) alloys have been investigated by means of differential scanning calorimetry and hardness measurements. The excess Si enhances the precipitation kinetics and improves the strength of the material. On the other hand, however addition of Cu assist formation of the Q' phase which positively changed the alloy strength. The high binding energy between vacancies and solute atoms (Si and Mg) enhances the combination of Si, Mg and vacancies to form Si-Mg-vacancy clusters. These clusters act as nucleation sites for GP-zones. The coexistence of the {beta}'- and Q'-precipitates in the balanced + Cu alloy results in a higher peak age hardening compared to the alloy with Si in excess.

  14. Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

    International Nuclear Information System (INIS)

    Chen, S.Y.; Chen, L.J.

    2006-01-01

    Self-assembled epitaxial NiSi 2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi 2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 deg. C, a high density of NiSi 2 nanowires was formed with an average aspect ratio of 30

  15. Tecnologías avanzadas de manufactura en países en vías de desarrollo: una comparación entre Costa Rica y México

    Directory of Open Access Journals (Sweden)

    Carlos Mora Monge

    2006-05-01

    Full Text Available Hoy, para los países en vías de desarrollo es crítico asegurar sus capacidades de manufactura para poder competir globalmente, en especial cuando hay tratados de libre comercio que se están negociando. Esto es particularmente importante para países como Costa Rica, el cual tiene un tratado de libre comercio con México y está en proceso de aprobación del tratado de libre comercio con los Estados Unidos (CAFTA, por sus siglas en inglés. Mucho se ha dicho sobre si Costa Rica está listo para firmar el tratado. Este artículo provee puntos de vista desde una perspectiva de manufactura y examina las diferencias en inversiones de tecnologías avanzadas de manufactura (AMT, por sus siglas in inglés y las barreras de implementación entre empresas mexicanas y costarricenses. Después de haber hecho una extensiva investigación sobre AMT en la literatura, dos preguntas de investigación se formularon con respecto a las diferencias entre ambos países. Usando una metodología en forma de cuestionario, la información se recolectó entre 125 empresas, 85 mexicanas y 40 costarricenses. Para probar la hipótesis planteada, se usó el análisis ANOVA (análisis de varianza. Los resultados indican que hay diferencias entre algunas tecnologías y barreras de implementación de AMT entre ambos países.

  16. Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires

    CSIR Research Space (South Africa)

    Thabethe, S

    2014-12-01

    Full Text Available Advanced core–shell FeSi@SiO(subx) nanowires are observed when FeCl(sub3) vapour is made to flow over a SiO(sub2)/Si substrate at 1100 degress C. The thickness of the SiO(subx) sheath (d0) is found to depend inversely as the period of time of HF...

  17. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

    Directory of Open Access Journals (Sweden)

    Abe Shunsuke

    2010-01-01

    Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

  18. New Insights into Understanding Irreversible and Reversible Lithium Storage within SiOC and SiCN Ceramics.

    Science.gov (United States)

    Graczyk-Zajac, Magdalena; Reinold, Lukas Mirko; Kaspar, Jan; Sasikumar, Pradeep Vallachira Warriam; Soraru, Gian-Domenico; Riedel, Ralf

    2015-02-24

    Within this work we define structural properties of the silicon carbonitride (SiCN) and silicon oxycarbide (SiOC) ceramics which determine the reversible and irreversible lithium storage capacities, long cycling stability and define the major differences in the lithium storage in SiCN and SiOC. For both ceramics, we correlate the first cycle lithiation or delithiation capacity and cycling stability with the amount of SiCN/SiOC matrix or free carbon phase, respectively. The first cycle lithiation and delithiation capacities of SiOC materials do not depend on the amount of free carbon, while for SiCN the capacity increases with the amount of carbon to reach a threshold value at ~50% of carbon phase. Replacing oxygen with nitrogen renders the mixed bond Si-tetrahedra unable to sequester lithium. Lithium is more attracted by oxygen in the SiOC network due to the more ionic character of Si-O bonds. This brings about very high initial lithiation capacities, even at low carbon content. If oxygen is replaced by nitrogen, the ceramic network becomes less attractive for lithium ions due to the more covalent character of Si-N bonds and lower electron density on the nitrogen atom. This explains the significant difference in electrochemical behavior which is observed for carbon-poor SiCN and SiOC materials.

  19. New Insights into Understanding Irreversible and Reversible Lithium Storage within SiOC and SiCN Ceramics

    Directory of Open Access Journals (Sweden)

    Magdalena Graczyk-Zajac

    2015-02-01

    Full Text Available Within this work we define structural properties of the silicon carbonitride (SiCN and silicon oxycarbide (SiOC ceramics which determine the reversible and irreversible lithium storage capacities, long cycling stability and define the major differences in the lithium storage in SiCN and SiOC. For both ceramics, we correlate the first cycle lithiation or delithiation capacity and cycling stability with the amount of SiCN/SiOC matrix or free carbon phase, respectively. The first cycle lithiation and delithiation capacities of SiOC materials do not depend on the amount of free carbon, while for SiCN the capacity increases with the amount of carbon to reach a threshold value at ~50% of carbon phase. Replacing oxygen with nitrogen renders the mixed bond Si-tetrahedra unable to sequester lithium. Lithium is more attracted by oxygen in the SiOC network due to the more ionic character of Si-O bonds. This brings about very high initial lithiation capacities, even at low carbon content. If oxygen is replaced by nitrogen, the ceramic network becomes less attractive for lithium ions due to the more covalent character of Si-N bonds and lower electron density on the nitrogen atom. This explains the significant difference in electrochemical behavior which is observed for carbon-poor SiCN and SiOC materials.

  20. Joining of SiCf/SiC composites for thermonuclear fusion reactors

    International Nuclear Information System (INIS)

    Ferraris, M.; Badini, C.; Montorsi, M.; Appendino, P.; Scholz, H.W.

    1994-01-01

    Due to their favourable radiological behaviour, SiC f /SiC composites are promising structural materials for future use in fusion reactors. A problem to cope with is the joining of the ceramic composite material (CMC) to itself for more complex structures. Maintenance concepts for a reactor made of SiC f /SiC will demand a method of joining. The joining agents should comply with the low-activation approach of the base material. With the acceptable elements Si and Mg, sandwich structures of composite/metal/composite were prepared in Ar atmosphere at temperatures just above the melting points of the metals. Another promising route is the use of joining agents of boro-silicate glasses: their composition can be tailored to obtain softening temperatures of interest for fusion applications. The glassy joint can be easily ceramised to improve thermomechanical properties. The joining interfaces were investigated by SEM-EDS, XRD and mechanical tests. ((orig.))

  1. On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

    Science.gov (United States)

    Khazaka, Rami; Michaud, Jean-François; Vennéguès, Philippe; Nguyen, Luan; Alquier, Daniel; Portail, Marc

    2016-11-01

    In this contribution, we performed the growth of a 3C-SiC/Si/3C-SiC layer stack on a Si(001) substrate by means of chemical vapor deposition. We show that, by tuning the growth conditions, the 3C-SiC epilayer can be grown along either the [111] direction or the [110] direction. The key parameter for the growth of the desired 3C-SiC orientation on the Si(110)/3C-SiC(001)/Si(001) heterostructure is highlighted and is linked to the Si epilayer surface morphology. The epitaxial relation between the layers has been identified using X-ray diffraction and transmission electron microscopy (TEM). We showed that, regardless of the top 3C-SiC epilayer orientation, domains rotated by 90° around the growth direction are present in the epilayer. Furthermore, the difference between the two 3C-SiC orientations was investigated by means of high magnification TEM. The results indicate that the faceted Si(110) epilayer surface morphology results in a (110)-oriented 3C-SiC epilayer, whereas a flat hetero-interface has been observed between 3C-SiC(111) and Si(110). The control of the top 3C-SiC growth direction can be advantageous for the development of new micro-electro-mechanical systems.

  2. Si nanoparticle-decorated Si nanowire networks for Li-ion battery anodes

    KAUST Repository

    Hu, Liangbing

    2011-01-01

    We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour-liquid-solid Si nanowire growth entails. © 2011 The Royal Society of Chemistry.

  3. Si nanocrystals embedded in SiO2: Optical studies in the vacuum ultraviolet range

    DEFF Research Database (Denmark)

    Pankratov, V.; Osinniy, Viktor; Kotlov, A.

    2011-01-01

    done. It is demonstrated that the experimentally determined blueshift of the photoluminescence excitation and absorption spectra is larger than the theoretical predictions. The influence of point defects in the SiO2 matrix on the optical and luminescence properties of the embedded Si nanocrystals...... is discussed. Moreover, it is demonstrated that no energy transfer takes place between the SiO2 and Si nanocrystals when the excitation energy is higher than the band-to-band transition energy in SiO2....

  4. RELACIÓN ENTRE EXPERIMENTAR EVENTOS VITALES ESTRESANTES Y SU SEVERIDAD

    Directory of Open Access Journals (Sweden)

    Flora J. García-Camargo

    2016-01-01

    Full Text Available Experimentar eventos vitales predice un deterioro en la salud , pero se desconocía si dicha experiencia afecta l a magnitud de los puntajes para cuantificar el estrés. El estudio averiguó la relación entre haber experimentado eventos vitales y su severidad . Adultos (N = 670 juzgaron la severidad de eventos que habían y que no habían experimentado . Los participantes juzgaron como más severos los eventos experimentados que los no experimentados . Esto sugirió que los puntajes empleados actualmente para cuantificar e l estrés subestiman el impacto nocivo de los eventos. Las mujeres juzgaron todos los eventos como más severos que los hombres . L os jóvenes juzgaron como más severos los eventos no experimentados mientras que las personas de clase baja juzgaron como más severos que sus contrapartes los eventos que habían experimentado. Se concluyó que la asignación de puntajes de una cierta magnitud está relacionada con experimentar los sucesos y no con las características socio -demográficas de los jueces.

  5. Effect of MoSi2 addition and particle size of SiC on pressureless sintering behavior and mechanical properties of ZrB2–SiC–MoSi2 composites

    Directory of Open Access Journals (Sweden)

    Mehri Mashhadi

    2016-07-01

    Full Text Available In the present paper, ZrB2–SiC–MoSi2 composites were prepared by pressureless sintering at temperatures of 2050, 2100 and 2150 °C for 1 h under argon atmosphere. In order to prepare composite samples, ZrB2 powder was milled for 2 h, then the reinforcing particles including of micron and nano-sized SiC powder were added. MoSi2 was added to ZrB2 from 0 to 5 wt.% as sintering aid. The mixtures were formed and, after the pyrolysis, they were sintered. Densification, microstructure and mechanical properties of ZrB2–SiC composites were investigated. The shrinkage of samples was measured, and the microstructure of samples was examined using scanning electron microscopy (SEM, equipped with EDS spectroscopy. In order to examine the oxidation behavior, the samples were heat treated at 1500 °C in air and then their weight changes were measured. Room temperature mechanical properties were examined. Mass fraction of MoSi2, particle size of SiC powder and sintering temperature have a great effect on relative density, porosity, shrinkage, hardness, fracture toughness, oxidation resistance and microstructure of these composites. The highest relative density, hardness, fracture toughness and weight changes of 98.7%, 16.17 GPa, 3 MPa m1/2 and 0.28%, respectively, were obtained in ZrB2–10 wt.%SiCnano–4 wt.%MoSi2 composites sintered at 2150 °C.

  6. Effect of SiC buffer layer on GaN growth on Si via PA-MBE

    Science.gov (United States)

    Kukushkin, S. A.; Mizerov, A. M.; Osipov, A. V.; Redkov, A. V.; Telyatnik, R. S.; Timoshnev, S. N.

    2017-11-01

    The study is devoted to comparison of GaN thin films grown on SiC/Si substrates made by the method of atoms substitution with the films grown directly on Si substrates. The growth was performed in a single process via plasma assisted molecular beam epitaxy. The samples were studied via optical microscopy, Raman spectroscopy, ellipsometry, and a comparison of their characteristics was made. Using chemical etching in KOH, the polarity of GaN films grown on SiC/Si and Si substrates was determined.

  7. Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

    International Nuclear Information System (INIS)

    Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

    2013-01-01

    We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

  8. Surface-site-selective study of valence electronic structures of clean Si(100)-2x1 using Si-L23VV Auger electron-Si-2p photoelectron coincidence spectroscopy

    International Nuclear Information System (INIS)

    Kakiuchi, Takuhiro; Nagaoka, Shinichi; Hashimoto, Shogo; Fujita, Narihiko; Tanaka, Masatoshi; Mase, Kazuhiko

    2010-01-01

    Valence electronic structures of a clean Si(100)-2x1 surface are investigated in a surface-site-selective way using Si-L 23 VV Auger electron-Si-2p photoelectron coincidence spectroscopy. The Si-L 23 VV Auger electron spectra measured in coincidence with Si-2p photoelectrons emitted from the Si up-atoms or Si 2nd-layer of Si(100)-2x1 suggest that the position where the highest density of valence electronic states located in the vicinity of the Si up-atoms is shifted by 0.8 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. Furthermore, the valence band maximum in the vicinity of the Si up-atoms is indicated to be shifted by 0.1 eV towards lower binding energy relative to that in the vicinity of the Si 2nd-layer. These results are direct evidence of the transfer of negative charge from the Si 2nd-layer to the Si up-atoms. (author)

  9. Radiation effects and micromechanics of SiC/SiC composites

    International Nuclear Information System (INIS)

    Ghoniem, N.M.

    1992-01-01

    The basic displacement damage process in SiC has been fully explored, and the mechanisms identified. Major modifications have been made to the theory of damage dosimetry in Fusion, Fission and Ion Simulation studies of Sic. For the first time, calculations of displacements per atoms in SiC can be made in any irradiation environment. Applications to irradiations in fusion first wall neutron spectra (ARIES and PROMETHEUS) as well as in fission spectra (HIFIR and FFTF) are given. Nucleation of helium-filled cavities in SiC was studied, using concepts of stability theory to determine the size of the critical nucleus under continuous generation of helium and displacement damage. It is predicted that a bimodal distribution of cavity sizes is likely to occur in heavily irradiated SiC. A study of the chemical compatibility of SiC composite structures with fusion reactor coolants at high-temperatures was undertaken. It was shown that SiC itself is chemically very stable in helium coolants in the temperature range 500--1000 degree C. However, current fiber/matrix interfaces, such as C and BN are not. The fracture mechanics of high-temperature matrix cracks with bridging fibers is now in progress. A fundamentally unique approach to study the propagation and interaction of cracks in a composite was initiated. The main focus of our research during the following period will be : (1) Theory and experiments for the micro-mechanics of high-temperature failure; and (2) Analysis of radiation damage and microstructure evolution

  10. Mechanism of Si intercalation in defective graphene on SiC

    KAUST Repository

    Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo; Upadhyay Kahaly, M.

    2012-01-01

    Previously reported experimental findings on Si-intercalated graphene on SiC(0001) seem to indicate the possibility of an intercalation process based on the migration of the intercalant through atomic defects in the graphene sheet. We employ density

  11. Si-FeSi2/C nanocomposite anode materials produced by two-stage high-energy mechanical milling

    Science.gov (United States)

    Yang, Yun Mo; Loka, Chadrasekhar; Kim, Dong Phil; Joo, Sin Yong; Moon, Sung Whan; Choi, Yi Sik; Park, Jung Han; Lee, Kee-Sun

    2017-05-01

    High capacity retention Silicon-based nanocomposite anode materials have been extensively explored for use in lithium-ion rechargeable batteries. Here we report the preparation of Si-FeSi2/C nanocomposite through scalable a two-stage high-energy mechanical milling process, in which nano-scale Si-FeSi2 powders are besieged by the carbon (graphite/amorphous phase) layer; and investigation of their structure, morphology and electrochemical performance. Raman analysis revealed that the carbon layer structure comprised of graphitic and amorphous phase rather than a single amorphous phase. Anodes fabricated with the Si-FeSi2/C showed excellent electrochemical behavior such as a first discharge capacity of 1082 mAh g-1 and a high capacity retention until the 30th cycle. A remarkable coulombic efficiency of 99.5% was achieved within a few cycles. Differential capacity plots of the Si-FeSi2/C anodes revealed a stable lithium reaction with Si for lithiation/delithiation. The enhanced electrochemical properties of the Si-FeSi2/C nanocomposite are mainly attributed to the nano-size Si and stable solid electrolyte interface formation and highly conductive path driven by the carbon layer.

  12. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    International Nuclear Information System (INIS)

    Youngblood, G.E.; Jones, R.H.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 x 6 x 2 mm 3 with a span-to-depth ratio of 10/1

  13. Micenas na Viena fin-de-siècle: Nietzsche, Freud, Hofmannsthal e o eterno retorno do mito

    Directory of Open Access Journals (Sweden)

    Leonardo Munk

    2012-12-01

    Full Text Available Este artigo tem por objetivo investigar a correlação de pensamento entre três importantes nomes da segunda metade do século XIX - Friedrich Nietzsche, Sigmund Freud e Hugo von Hofmannsthal - que se debruçaram sobre as crises da identidade masculina frente ao retorno do matriarcado. Tendo a Viena fin-de-siècle como cenário, o feminino é apresentado aqui por intermédio de Electra, que no texto homônimo de Hofmannsthal representa não só o fortalecimento como a própria destruição da mulher.

  14. Atomic state and characterization of nitrogen at the SiC/SiO2 interface

    International Nuclear Information System (INIS)

    Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

    2014-01-01

    We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO 2 interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO 2 ). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs

  15. RBS characterization of the deposition of very thin SiGe/SiO2 multilayers by LPCVD

    International Nuclear Information System (INIS)

    Munoz-Martin, A.; Climent-Font, A.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

    2005-01-01

    Multilayer structures consisting of several alternated layers of SiGe and SiO 2 with thickness ranging from 2 or Si as well as the deposition of SiO 2 on Si show negligible incubation times. The deposition of SiO 2 on SiGe, however, exhibits an incubation time of several minutes, which would be related to the oxidation of the surface necessary for the SiO 2 deposition to start. In all cases the film thickness increases linearly with deposition time, thus allowing the growth rates to be determined. These data allow the deposition process of these very thin layers to be accurately controlled

  16. Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

    Science.gov (United States)

    Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

    2018-03-01

    The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

  17. Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system

    International Nuclear Information System (INIS)

    Richardson, C.; Takoudis, C.G.

    1999-01-01

    The thermal, chemical, and physical properties of SiC make it an attractive material for a wide range of applications from wear resistant coatings on tools to high temperature microelectronics operations. A comprehensive thermodynamic analysis has been performed for the Si/H/C/O system from which a priori process-property relationships of the chemical vapor deposition (CVD) of silicon carbide (SiC) are obtained. The parameter space for pure silicon carbide growth is reported for five orders of magnitude of the system water vapor level (1 ppb--100 ppm), four orders of magnitude of system pressure (0.1--760 Torr), and two orders of magnitude of C/Si feed ratio (0.25--20) and H 2 /Si feed ratio (50--10,000). Lower growth temperatures for pure SiC are predicted in clean systems with low system water vapor levels, at stoichiometric to near carbon excess conditions (C/Si ≅ 1 to C/Si > 1), at high carrier gas flow rates (large H 2 /Si feed ratios), and at low operating pressures. Because relative C/Si and H 2 /Si feed ratios have been considered, the predictions in this study are applicable to both multiple and single precursor systems. Further, these results are valid for the CVD of α-SiC as well as β-SiC. Experimental data reported on the growth of α-SiC and β-SiC are found to be in satisfactory agreement with the theoretical predictions, for numerous systems that include multiple and single source, silicon and carbon, species

  18. Structural, electronic, elastic, and thermodynamic properties of CaSi, Ca2Si, and CaSi2 phases from first-principles calculations

    Science.gov (United States)

    Li, X. D.; Li, K.; Wei, C. H.; Han, W. D.; Zhou, N. G.

    2018-06-01

    The structural, electronic, elastic, and thermodynamic properties of CaSi, Ca2Si, and CaSi2 are systematically investigated by using first-principles calculations method based on density functional theory (DFT). The calculated formation enthalpies and cohesive energies show that CaSi2 possesses the greatest structural stability and CaSi has the strongest alloying ability. The structural stability of the three phases is compared according to electronic structures. Further analysis on electronic structures indicates that the bonding of these phases exhibits the combinations of metallic, covalent, and ionic bonds. The elastic constants are calculated, and the bulk modulus, shear modulus, Young's modulus, Poisson's ratio, and anisotropy factor of polycrystalline materials are deduced. Additionally, the thermodynamic properties were theoretically predicted and discussed.

  19. Thermophysical and mechanical properties of SiC/SiC composites

    International Nuclear Information System (INIS)

    Zinkle, S.J.; Snead, L.L.

    1998-01-01

    The key thermophysical and mechanical properties for SiC/SiC composites are summarized, including temperature-dependent tensile properties, elastic constants, thermal conductivity, thermal expansion, and specific heat. The effects of neutron irradiation on the thermal conductivity and dimensional stability (volumetric swelling, creep) of SiC is discussed. The estimated lower and upper temperatures limits for structural applications in high power density fusion applications are 400 and 1000 C due to thermal conductivity degradation and void swelling considerations, respectively. Further data are needed to more accurately determine these estimated temperature limits

  20. A natureza humana do comportamento individual nos primórdios do pensamento econômico: uma comparação entre Hume, Smith e Bentham

    Directory of Open Access Journals (Sweden)

    Glaucia Campregher

    Full Text Available Resumo Busca-se compreender como a relação entre indivíduo e contexto social-histórico fazia-se presente nas teorias e especulações filosóficas de Hume, Smith e Bentham - enfocando o papel concedido à natureza individual, suas supostas tendências ou predisposições inatas, sejam elas racionais ou passionais. Principalmente em Hume e Smith, observa-se que a capacidade natural de nos importarmos com o outro, sympathy, não diz muito em si mesma, mas ganha concretude com o hábito. Já em Bentham, a sympathy, que faz o indivíduo sair de si e se reconhecer no outro, dará lugar ao indivíduo isolado, o que impossibilita a superação de uma “natureza natural” por uma natureza histórico-social do homem.

  1. Cavities at the Si projected range by high dose and energy Si ion implantation in Si

    International Nuclear Information System (INIS)

    Canino, M.; Regula, G.; Lancin, M.; Xu, M.; Pichaud, B.; Ntzoenzok, E.; Barthe, M.F.

    2009-01-01

    Two series of n-type Si samples α and β are implanted with Si ions at high dose (1 x 10 16 ) and high energies, 0.3 and 1.0 MeV, respectively. Both sort of samples are then implanted with 5 x 10 16 He cm -2 (at 10 or 50 keV) and eventually with B atoms. Some of the samples are annealed at temperatures ranging from 800 to 1000 deg. C to allow the thermal growth of He-cavities, located between sample surface and the projected range (R p ) of Si. After the triple ion implantation, which corresponds to defect engineering, samples were characterized by cross-section transmission electron microscopy (XTEM). Voids (or bubbles) are observed not only at the R p (He) on all annealed samples, but also at the R p (Si) on β samples implanted with He at 50 keV. The samples are also studied by positron annihilation spectroscopy (PAS) and the spectra confirm that as-implanted samples contain di-vacancies and that the annealed ones, even at high temperature have bigger open volumes, which are assumed to be the same voids observed by XTEM. It is demonstrated that a sole Si implantation at high energy and dose is efficient to create cavities which are thermally stable up to 1000 deg. C only in the presence of He.

  2. Characterization of SiCf/SiC and CNT/SiC composite materials produced by liquid phase sintering

    International Nuclear Information System (INIS)

    Lee, J.K.; Lee, S.P.; Cho, K.S.; Byun, J.H.; Bae, D.S.

    2011-01-01

    This paper dealt with the microstructure and mechanical properties of SiC based composites reinforced with different reinforcing materials. The composites were fabricated using reinforcing materials of carbon nanotubes (CNT) and Tyranno Lox-M SiC chopped fibers. The volume fraction of carbon nanotubes was also varied in this composite system. An Al 2 O 3 -Y 2 O 3 powder mixture was used as a sintering additive in the consolidation of the SiC matrix. The characterization of the composites was investigated by means of SEM and three point bending tests. These composites showed a dense morphology of the matrix region, by the creation of a secondary phase. The composites reinforced with SiC chopped fibers possessed a flexural strength of about 400 MPa at room temperature. The flexural strength of the carbon nanotubes composites had a tendency to decrease with increased volume fraction of the reinforcing material.

  3. Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

    Institute of Scientific and Technical Information of China (English)

    蔡艳芝; 殷小玮; 尹洪峰

    2015-01-01

    The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

  4. Laser cladding of Al-Si/SiC composite coatings : Microstructure and abrasive wear behavior

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Vilar, R.; Ocelik, V.; De Hosson, J.Th.M.

    2007-01-01

    Surface coatings of an Al-Si-SiC composite were produced on UNS A03560 cast Al-alloy substrates by laser cladding using a mixture of powders of Al-12 wt.% Si alloy and SiC. The microstructure of the coatings depends considerably on the processing parameters. For a specific energy of 26 MJ/m2 the

  5. Synthesis, characterization, and wear and friction properties of variably structured SiC/Si elements made from wood by molten Si impregnation

    DEFF Research Database (Denmark)

    Dhiman, Rajnish; Rana, Kuldeep; Bengu, Erman

    2012-01-01

    We have synthesized pre-shaped SiC/Si ceramic material elements from charcoal (obtained from wood) by impregnation with molten silicon, which takes place in a two-stage process. In the first process, a porous structure of connected micro-crystals of β-SiC is formed, while, in the second process...

  6. Potential energy landscape of an interstitial O2 molecule in a SiO2 film near the SiO2/Si(001) interface

    Science.gov (United States)

    Ohta, Hiromichi; Watanabe, Takanobu; Ohdomari, Iwao

    2008-10-01

    Potential energy distribution of interstitial O2 molecule in the vicinity of SiO2/Si(001) interface is investigated by means of classical molecular simulation. A 4-nm-thick SiO2 film model is built by oxidizing a Si(001) substrate, and the potential energy of an O2 molecule is calculated at Cartesian grid points with an interval of 0.05 nm in the SiO2 film region. The result shows that the potential energy of the interstitial site gradually rises with approaching the interface. The potential gradient is localized in the region within about 1 nm from the interface, which coincides with the experimental thickness of the interfacial strained layer. The potential energy is increased by about 0.62 eV at the SiO2/Si interface. The result agrees with a recently proposed kinetic model for dry oxidation of silicon [Phys. Rev. Lett. 96, 196102 (2006)], which argues that the oxidation rate is fully limited by the oxidant diffusion.

  7. Microhardness evaluation alloys Hf-Si-B; Avaliacao de microdureza de ligas Hf-Si-B

    Energy Technology Data Exchange (ETDEWEB)

    Gigolotti, Joao Carlos Janio; Costa, Eliane Fernandes Brasil [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Rocha, Elisa Gombio; Coelho, Gilberto Carvalho, E-mail: carlosjanio@uol.com.br, E-mail: eliane-costabrasi@hotmail.com, E-mail: cnunes@demar.eel.usp.br, E-mail: elisarocha@alunos.eel.usp.br, E-mail: coelho@demar.eel.usp.br [Universidade de Sao Paulo (USP), Lorena, SP (Brazil)

    2014-08-15

    The technological advance has generated increasing demand for materials that can be used under high temperature, what includes intermetallic MR-Si-B (MR = refractory metal) alloys with multiphase structures, that can also be applied in oxide environments. Thus, this work had for objective the micro hardness study of the Hf-Si-B system alloys, heat treated at 1600 deg C, in the Hf rich region. Hf-Si-B alloys had been produced with blades of Hf (min. 99.8%), Si (min. 99.998%) and B (min. 99.5%), in the voltaic arc furnace and heat treated at 1600 deg C under argon atmosphere. The relationship of the phases had been previously identified by X-ray diffraction and contrast in backscattered electron imaging mode. The alloys had their hardness analyzed by method Vickers (micro hardness) with load of 0.05 kgf and 0.2 kgf and application time of 20 s. The results, obtained from the arithmetic mean of measurements for each alloy on the heterogeneous region, showed a mean hardness of 11.08 GPA, with small coefficient of variation of 3.8%. The borides HfB2 (19.34 GPa) e HfB - 11.76 GPa, showed the hardness higher than the silicides Hf2Si (8.57 GPa), Hf5Si3 (9.63 GPa), Hf3Si2 (11.66 GPa), Hf5Si4 (10.00 GPa), HfSi (10.02 GPa) e HfSi2 (8.61 GPa). (author)

  8. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Halverson, H.; Curtin, W.A. [Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  9. Effect of heat treatment on microstructure and mechanical properties of PIP-SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Shuang, E-mail: zhsh6007@126.com [Key Laboratory of Advanced Ceramic Fibres and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha 410073 (China); School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Zhou, Xingui; Yu, Jinshan [Key Laboratory of Advanced Ceramic Fibres and Composites, College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha 410073 (China); Mummery, Paul [School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2013-01-01

    Continuous SiC fibre reinforced SiC matrix composites (SiC/SiC) have been studied as materials for heat resistant and nuclear applications. Thermal stability is one of the key issues for SiC/SiC composites. In this study, 3D SiC/SiC composites are fabricated via the polymer impregnation and pyrolysis (PIP) process, and then heat treated at 1400 Degree-Sign C, 1600 Degree-Sign C and 1800 Degree-Sign C in an inert atmosphere for 1 h, respectively. The effect of heat treatment on microstructure and mechanical properties of the composites is investigated. The results indicate that the mechanical properties of the SiC/SiC composites are significantly improved after heat treatment at 1400 Degree-Sign C mainly because the mechanical properties of the matrix are greatly improved due to crystallisation. With the increasing of heat treatment temperature, the properties of the composites are conversely decreased because of severe damage of the fibres and the matrix.

  10. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

    Directory of Open Access Journals (Sweden)

    Jhovani Bornacelli

    2013-01-01

    Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  11. Hot Corrosion Behavior of Stainless Steel with Al-Si/Al-Si-Cr Coating

    Science.gov (United States)

    Fu, Guangyan; Wu, Yongzhao; Liu, Qun; Li, Rongguang; Su, Yong

    2017-03-01

    The 1Cr18Ni9Ti stainless steel with Al-Si/Al-Si-Cr coatings is prepared by slurry process and vacuum diffusion, and the hot corrosion behavior of the stainless steel with/without the coatings is studied under the condition of Na2SO4 film at 950 °C in air. Results show that the corrosion kinetics of stainless steel, the stainless steel with Al-Si coating and the stainless steel with Al-Si-Cr coating follow parabolic laws in several segments. After 24 h corrosion, the sequence of the mass gain for the three alloys is the stainless steel with Al-Si-Cr coating coating coating. The corrosion products of the three alloys are layered. Thereinto, the corrosion products of stainless steel without coating are divided into two layers, where the outside layer contains a composite of Fe2O3 and FeO, and the inner layer is Cr2O3. The corrosion products of the stainless steel with Al-Si coating are also divided into two layers, of which the outside layer mainly consists of Cr2O3, and the inner layer is mainly SiO2. The corrosion film of the stainless steel with Al-Si-Cr coating is thin and dense, which combines well with substrate. Thereinto, the outside layer is mainly Cr2O3, and the inside layer is Al2O3. In the matrix of all of the three alloys, there exist small amount of sulfides. Continuous and protective films of Cr2O3, SiO2 and Al2O3 form on the surface of the stainless steel with Al-Si and Al-Si-Cr coatings, which prevent further oxidation or sulfide corrosion of matrix metals, and this is the main reason for the much smaller mass gain of the two alloys than that of the stainless steel without any coatings in the 24 h hot corrosion process.

  12. Low-temperature Au/a-Si wafer bonding

    International Nuclear Information System (INIS)

    Jing, Errong; Xiong, Bin; Wang, Yuelin

    2011-01-01

    The Si/SiO 2 /Ti/Au–Au/Ti/a-Si/SiO 2 /Si bonding structure, which can also be used for the bonding of non-silicon material, was investigated for the first time in this paper. The bond quality test showed that the bond yield, bond repeatability and average shear strength are higher for this bonding structure. The interfacial microstructure analysis indicated that the Au-induced crystallization of the amorphous silicon process leads to big Si grains extending across the bond interface and Au filling the other regions of the bond interface, which result into a strong and void-free bond interface. In addition, the Au-induced crystallization reaction leads to a change in the IR images of the bond interface. Therefore, the IR microscope can be used to evaluate and compare the different bond strengths qualitatively. Furthermore, in order to verify the superiority of the bonding structure, the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si (i.e. no Ti/Au layer on the a-Si surface) and Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structures (i.e. Au thermocompression bonding) were also investigated. For the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si bonding structure, the poor bond quality is due to the native oxide layer on the a-Si surface, and for the Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structure, the poor bond quality is caused by the wafer surface roughness which prevents intimate contact and limits the interdiffusion at the bond interface.

  13. Corroboration of Raman and AFM mapping to study Si nanocrystals embedded in SiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Rani, Ekta, E-mail: ades.ekta@gmail.com [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Ingale, Alka A. [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Chaturvedi, A. [Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Joshi, M.P.; Kukreja, L.M. [Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)

    2016-07-05

    Raman and atomic force microscopy (AFM) mapping on the same selected area are used to get unique information about the morphology of Si nanocrystals (NCs) embedded in SiO{sub 2}, which is difficult to obtain by any other conventional technique. The sensitivity of Raman spectroscopy to surface/interface and confinement effects in NCs is effectively used to correlate the Raman intensity profile in Raman mapping with the topography obtained from AFM to understand that Si NCs are clustered in i) smaller clusters (∼100 nm) organized closely in two dimensions (2D) and ii) big (∼2 μm) three dimensional (3D) isolated clusters, although the growth is carried out to be multilayer (Si/SiO{sub 2}). Raman mapping performed by varying the focal spot along the depth shows stacking of larger (>∼60 Å) to smaller sizes (<∼40 Å) Si NCs from bottom to top for some clusters. To understand the observed morphologies, further study of specially grown Si–SiO{sub 2} nanocomposites is performed, which suggest formation of smaller Si NCs at the top due to annealing at 800 °C in Si rich SiO{sub 2} and possible existence of thermal gradient in an insulating matrix of SiO{sub 2.} Larger Si NCs are formed in the laser induced plume (plasma) itself. - Graphical abstract: a) Schematic showing the expected stacking of Si NCs obtained from Raman mapping, performed by changing focal spot along the depth, b) top, c) middle and d) bottom region of the cluster. - Highlights: • Methodology is developed to obtain Raman and AFM mapping at same selected area. • To get unique information, difficult to obtain using other conventional techniques. • Clusters (∼100 nm–2 μm) of Si nanocrystals embedded in SiO{sub 2} matrix are formed. • Stacking of Si nanocrystals from bottom to top (10–1 nm) is observed in some clusters. • Stacking of Si nanocrystals is understood as due to annealing and thermal gradient.

  14. Self-assembled patches in PtSi/n-Si (111) diodes

    Science.gov (United States)

    Afandiyeva, I. M.; Altιndal, Ş.; Abdullayeva, L. K.; Bayramova, A. İ.

    2018-05-01

    Using the effect of the temperature on the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of PtSi/n-Si (111) Schottky diodes the profile of apparent doping concentration (N Dapp), the potential difference between the Fermi energy level and the bottom of the conduction band (V n), apparent barrier height (Φ Bapp), series resistance (R s) and the interface state density N ss have been investigated. From the temperature dependence of (C–V) it was found that these parameters are non-uniformly changed with increasing temperature in a wide temperature range of 79–360 K. The voltage and temperature dependences of apparent carrier distribution we attributed to the existence of self-assembled patches similar the quantum wells, which formed due to the process of PtSi formation on semiconductor and the presence of hexagonal voids of Si (111).

  15. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo; Yoo, Tae Jin; Kim, Jin Tae; Pak, Yusin; Kumaresan, Yogeenth; Kim, Hyeonghun; Kim, Woochul; Lee, Byoung Hun; Jung, Gun Young

    2018-01-01

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates

  16. Protection and systemic translocation of siRNA following oral administration of chitosan/siRNA nanoparticles

    DEFF Research Database (Denmark)

    Gonzalez, Borja Ballarin; Dagnæs-Hansen, Frederik; Fenton, Robert A.

    2013-01-01

    , gastrointestinal (GI) deposition, and translocation into peripheral tissue of nonmodified siRNA after oral gavage of chitosan/siRNA nanoparticles in mice. In contrast to naked siRNA, retained structural integrity and deposition in the stomach, proximal and distal small intestine, and colon was observed at 1 and 5...... hours for siRNA within nanoparticles. Furthermore, histological detection of fluorescent siRNA at the apical regions of the intestinal epithelium suggests mucoadhesion provided by chitosan. Detection of intact siRNA in the liver, spleen, and kidney was observed 1 hour after oral gavage, with an organ...

  17. Self-organization of nanocluster δ-layers at ion-beam-mixed Si-SiO2 interfaces

    International Nuclear Information System (INIS)

    Roentzsch, L.

    2003-11-01

    This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of δ-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of ''bottom-up'' structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15 nm thin SiO 2 layer, which is enclosed by a 50 nm poly-Si capping layer and the Si substrate, is irradiated with Si + ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degree unattainable in common processes. A region of SiO x (x 2 matrix at a distance of ∼3 nm from the Si substrate. The physical mechanisms of ion mixing of the two Si-SiO 2 interfaces and subsequent phase separation, which result in the desired sample structure, are elucidated from the viewpoint of computer simulations. In addition, experimental evidence is presented based on various methods, including TEM, RBS, and SIMS. A novel method of Si nanocluster decoration is of particular importance which applies Ge as contrast enhancing element in TEM studies of tiny Si nanoclusters. (orig.)

  18. High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

    Science.gov (United States)

    Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

    2017-07-01

    The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

  19. Stability of Ta-encapsulating Si clusters on Si(111)-(7x7) surfaces

    CERN Document Server

    Uchida, N; Miyazaki, T; Kanayama, T

    2003-01-01

    Tantalum containing Si cluster ions TaSi sub 1 sub 0 sub - sub 1 sub 3 H sub x sup + were synthesized in an ion trap and deposited onto Si(111)-(7x7) surfaces with a kinetic energy of 18 eV. Scanning tunnelling microscope observations revealed that the clusters adsorbed on the surface without decomposition, consistent with ab initio calculation results, that predicted the clusters would have stable Si-cage structures with a Ta atom at the centre. (rapid communication)

  20. Si cycling in a forest biogeosystem – the importance of transient state biogenic Si pools

    Directory of Open Access Journals (Sweden)

    M. Sommer

    2013-07-01

    Full Text Available The relevance of biological Si cycling for dissolved silica (DSi export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi might contribute > 50% to DSi (Gerard et al., 2008. However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%. Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007–04/2011, we quantified (i internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr by BIOME-BGC (version ZALF, (ii related Si budgets, and (iii Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae. We quantified an average Si plant uptake of 35 kg Si ha−1 yr−1 – most of which is recycled to the soil by litterfall – and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha−1. The comparatively high DSi concentrations (6 mg L−1 and DSi exports (12 kg Si ha−1 yr−1 could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

  1. $^{31}$Si Self-Diffusion in Si-Ge Alloys and Si-(B-)C-N Ceramics and Diffusion Studies for Al and Si Beam Developments

    CERN Multimedia

    Nylandsted larsen, A; Voss, T L; Strohm, A

    2002-01-01

    An invaluable method for studying diffusion in solids is the radiotracer technique. However, its applicability had been restricted to radiotracer atoms with half-lives $t_{1/2}$ of about 1~d or longer. Within the framework of IS372 a facility was developed in which short-lived radiotracer atoms ( 5min $\\scriptstyle{\\lesssim}$ $t_{1/2}\\scriptstyle{\\lesssim}$1 d ) can be used. For the implantation of the short-lived tracers the facility is flanged to the ISOLDE beamline, and all post-implantation steps required in the radiotracer technique are done in situ.\\\\ After successful application of this novel technique in diffusion studies of $^{11}$C ($t_{1/2}$ = 20.3 min), this experiment aims at performing self-diffusion studies of $^{31}$Si ($t_{1/2}$ = 2.6~h) in Si--Ge alloys and in amorphous Si--(B--)C--N ceramics.\\\\ Our motivation for measuring diffusion in Si--Ge alloys is their recent technological renaissance as well as the purpose to test the prediction that in these alloys the self-diffusion mechanism chang...

  2. Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

    International Nuclear Information System (INIS)

    Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

    2000-01-01

    The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

  3. Multiscale Engineered Si/SiO x Nanocomposite Electrodes for Lithium-Ion Batteries Using Layer-by-Layer Spray Deposition.

    Science.gov (United States)

    Huang, Chun; Kim, Ayoung; Chung, Dong Jae; Park, Eunjun; Young, Neil P; Jurkschat, Kerstin; Kim, Hansu; Grant, Patrick S

    2018-05-09

    Si-based high-capacity materials have gained much attention as an alternative to graphite in Li-ion battery anodes. Although Si additions to graphite anodes are now commercialized, the fraction of Si that can be usefully exploited is restricted due to its poor cyclability arising from the large volume changes during charge/discharge. Si/SiO x nanocomposites have also shown promising behavior, such as better capacity retention than Si alone because the amorphous SiO x helps to accommodate the volume changes of the Si. Here, we demonstrate a new electrode architecture for further advancing the performance of Si/SiO x nanocomposite anodes using a scalable layer-by-layer atomization spray deposition technique. We show that particulate C interlayers between the current collector and the Si/SiO x layer and between the separator and the Si/SiO x layer improved electrical contact and reduced irreversible pulverization of the Si/SiO x significantly. Overall, the multiscale approach based on microstructuring at the electrode level combined with nanoengineering at the material level improved the capacity, rate capability, and cycling stability compared to that of an anode comprising a random mixture of the same materials.

  4. The corrosion behavior of CVI SiC matrix in SiC{sub f}/SiC composites under molten fluoride salt environment

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hongda [Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); School of Graduate, University of Chinese Academy of Sciences, Beijing 100049 (China); Feng, Qian [Analysis and Testing Center, Donghua University, Shanghai 201600 (China); Wang, Zhen, E-mail: jeff@mail.sic.ac.cn [Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zhou, Haijun; Kan, Yanmei; Hu, Jianbao [Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Dong, Shaoming, E-mail: smdong@mail.sic.ac.cn [Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

    2017-04-15

    High temperature corrosion behavior and microstructural evolution of designed chemical-vapor-infiltrated SiC matrix in SiC fiber reinforced SiC ceramic matrix composites in 46.5LiF-11.5NaF-42.0KF (mol. %) eutectic salt at 800 °C for various corrosion time was studied. Worse damage was observed as extending the exposure time, with the mass loss ratio increasing from 0.716 wt. % for 50 h to 5.914 wt. % for 500 h. The mass loss rate showed a trend of first decrease and then increase with the extended corrosion exposure. Compared with the near-stoichiometric SiC matrix layers, the O-contained boundaries between deposited matrix layers and the designed Si-rich SiC matrix layers were much less corrosion resistant and preferentially corroded. Liner relationship between the mass loss ratio and the corrosion time obtained from 50 h to 300 h indicated that the corrosion action was reaction-control process. Further corrosion would lead to matrix layer exfoliation and higher mass loss ratio.

  5. Relación entre actitudes hacia el endeudamiento y locus de control del consumidor en estudiantes universitarios

    Directory of Open Access Journals (Sweden)

    Luis Mansilla Chiguay

    2016-01-01

    Full Text Available El endeudamiento tiene un gran impacto en la calidad de vida, por ello es necesaria la comprensión de las variables que subyacen a este comportamiento. Al respecto, el locus de control ha sido señalado como una variable psicológica relevante que podría estar relacionada con las actitudes hacia la deuda y, por ende, con el uso del crédito en los jóvenes. El objetivo de este estudio fue determinar si existe relación entre el locus de control del consumidor y las actitudes hacia el endeudamiento en una muestra de 472 estudiantes universitarios chilenos de carreras de pedagogía de dos universidades del sur de Chile. Para recoger los datos, se adaptó y transculturizó la Escala de Locus de Control del Consumidor al contexto chileno. Para evaluar las actitudes hacia el endeudamiento se utilizó la Escala de Actitudes hacia el Endeudamiento. Los análisis de la escala de locus de control del consumidor indicaron la necesidad de abandonar la unidimensionalidad de la escala; así, emergió una nueva solución de tres factores. El análisis de diferencias de sexo revela que los hombres presentan actitudes más favorables hacia el endeudamiento. En concordancia con la hipótesis general del estudio, actitudes de mayor tolerancia hacia el endeudamiento se relacionan con un locus externo en materia de consumo. Los resultados aportan evidencia que sustenta la relación teórica entre las atribuciones de control y las actitudes hacia la deuda, y constituyen un insumo relevante para el diseño de estrategias de educación financiera en los jóvenes, al enfatizar la importancia de considerar la influencia de variables psicológicas y no solamente contenidos financieros si se esperan cambios significativos del comportamiento.

  6. Fiber/matrix interfacial thermal conductance effect on the thermal conductivity of SiC/SiC composites

    International Nuclear Information System (INIS)

    Nguyen, Ba Nghiep; Henager, Charles H.

    2013-01-01

    SiC/SiC composites used in fusion reactor applications are subjected to high heat fluxes and require knowledge and tailoring of their in-service thermal conductivity. Accurately predicting the thermal conductivity of SiC/SiC composites as a function of temperature will guide the design of these materials for their intended use, which will eventually include the effects of 14-MeV neutron irradiations. This paper applies an Eshelby–Mori–Tanaka approach (EMTA) to compute the thermal conductivity of unirradiated SiC/SiC composites. The homogenization procedure includes three steps. In the first step EMTA computes the homogenized thermal conductivity of the unidirectional (UD) SiC fiber embraced by its coating layer. The second step computes the thermal conductivity of the UD composite formed by the equivalent SiC fibers embedded in a SiC matrix, and finally the thermal conductivity of the as-formed SiC/SiC composite is obtained by averaging the solution for the UD composite over all possible fiber orientations using the second-order fiber orientation tensor. The EMTA predictions for the transverse thermal conductivity of several types of SiC/SiC composites with different fiber types and interfaces are compared to the predicted and experimental results by Youngblood et al. [J. Nucl. Mater. 307–311 (2002) 1120–1125, Fusion Sci. Technol. 45 (2004) 583–591, Compos. Sci. Technol. 62 (2002) 1127–1139.

  7. Light trapping of crystalline Si solar cells by use of nanocrystalline Si layer plus pyramidal texture

    Energy Technology Data Exchange (ETDEWEB)

    Imamura, Kentaro; Nonaka, Takaaki; Onitsuka, Yuya; Irishika, Daichi; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • Ultralow reflectivity Si wafers with light trapping effect can be obtained by forming a nanocrystalline Si layer on pyramidal textured Si surfaces. • Surface passivation using phosphosilicate glass improved minority carrier lifetime of the nanocrystalline Si layer/Si structure. • A high photocurrent density of 40.1 mA/cm{sup 2}, and a high conversion efficiency of 18.5% were achieved. - Abstract: The surface structure chemical transfer (SSCT) method has been applied to fabrication of single crystalline Si solar cells with 170 μm thickness. The SSCT method, which simply involves immersion of Si wafers in H{sub 2}O{sub 2} plus HF solutions and contact of Pt catalyst with Si taking only ∼30 s for 6 in. wafers, can decrease the reflectivity to less than 3% by the formation of a nanocrystalline Si layer. However, the reflectivity of the nanocrystalline Si layer/flat Si surface/rear Ag electrode structure in the wavelength region longer than 1000 nm is high because of insufficient absorption of incident light. The reflectivity in the long wavelength region is greatly decreased by the formation of the nanocrystalline Si layer on pyramidal textured Si surfaces due to an increase in the optical path length. Deposition of phosphosilicate glass (PSG) on the nanocrystalline Si layer for formation of pn-junction does not change the ultralow reflectivity because the surface region of the nanocrystalline Si layer possesses a refractive index of 1.4 which is nearly the same as that of PSG of 1.4–1.5. The PSG layer is found to passivate the nanocrystalline Si layer, which is evident from an increase in the minority carrier lifetime from 12 to 44 μs. Hydrogen treatment at 450 °C further increases the minority carrier lifetime approximately to a doubled value. The solar cells with the Si layer/pyramidal Si substrate/boron-diffused back surface field/Ag rear electrode> structure show a high conversion efficiency of 18

  8. In-situ synthesis of SiC particles by the structural evolution of TiCx in Al–Si melt

    International Nuclear Information System (INIS)

    Nie, Jinfeng; Li, Dakui; Wang, Enzhao; Liu, Xiangfa

    2014-01-01

    Highlights: • A facile method to in-situ synthesize SiC was developed utilizing the structural evolution of TiC x in Al–Si melt. • The SiC particles have the size range from 2.5 to 7.5 μm and a block-like morphology. • The SiC particles and (SiC + TiB 2 ) hybrid-particles reinforced Al–18Si composite were prepared. • The wear resistance effect of SiC on the based alloy was investigated. - Abstract: A facile method has been developed to in-situ synthesize SiC particles utilizing the structural instability and evolution of TiC x in Al–Si melt. It is considered that the synthesis of SiC particles occurs via the gradual reaction between TiC x and Si atoms, whilst Si content plays the crucial role in this approach. If the Si content in the melt is above 30%, TiC x directly reacts with Si and Al to form SiC, but the needle-like TiAl x Si y phase formed simultaneously will do harm to the mechanical properties of the composites. Thus, it is proposed to add B element in the melt to transform the TiAl x Si y into TiB 2 particles. Therefore, the SiC and (SiC + TiB 2 ) hybrid-particles reinforced Al–18Si composites were successfully prepared using the method. In the composites, the SiC particles have the size range from 2.5 to 7.5 μm and a block-like morphology. Furthermore, the mechanical properties of base alloy, including the wear resistance and macro-hardness, have been obviously improved by the in-situ SiC particles. Besides, the relevant underlying mechanisms are also discussed

  9. Initial assessment of environmental effects on SiC/SiC composites in helium-cooled nuclear systems

    Energy Technology Data Exchange (ETDEWEB)

    Contescu, Cristian I [ORNL

    2013-09-01

    This report summarized the information available in the literature on the chemical reactivity of SiC/SiC composites and of their components in contact with the helium coolant used in HTGR, VHTR and GFR designs. In normal operation conditions, ultra-high purity helium will have chemically controlled impurities (water, oxygen, carbon dioxide, carbon monoxide, methane, hydrogen) that will create a slightly oxidizing gas environment. Little is known from direct experiments on the reactivity of third generation (nuclear grade) SiC/SiC composites in contact with low concentrations of water or oxygen in inert gas, at high temperature. However, there is ample information about the oxidation in dry and moist air of SiC/SiC composites at high temperatures. This information is reviewed first in the next chapters. The emphasis is places on the improvement in material oxidation, thermal, and mechanical properties during three stages of development of SiC fibers and at least two stages of development of the fiber/matrix interphase. The chemical stability of SiC/SiC composites in contact with oxygen or steam at temperatures that may develop in off-normal reactor conditions supports the conclusion that most advanced composites (also known as nuclear grade SiC/SiC composites) have the chemical resistance that would allow them maintain mechanical properties at temperatures up to 1200 1300 oC in the extreme conditions of an air or water ingress accident scenario. Further research is needed to assess the long-term stability of advanced SiC/SiC composites in inert gas (helium) in presence of very low concentrations (traces) of water and oxygen at the temperatures of normal operation of helium-cooled reactors. Another aspect that needs to be investigated is the effect of fast neutron irradiation on the oxidation stability of advanced SiC/SiC composites in normal operation conditions.

  10. Angular distributions of fast neutrons scattered by Al, Si, P, S and Zn; Distributions angulaires des neutrons rapides diffuses par Al, Si, P, S et Zn; Usloviya raspredeleniya bystrykh nejtronov, rasseyannykh alyuminiem, kremniem, fosforom i tsinkom; Distribuciones angulares de neutrones rapidos dispersados por Al, Si, P, S y Zn

    Energy Technology Data Exchange (ETDEWEB)

    Tstjkaija, K; Tanaka, S; Maeuyama, M; Tomita, Y [Japan Atomic Energy Research Institute, Tokai-Mtjea (Japan)

    1962-03-15

    Differential scattering cross-sections of Al, Si, P, S and Zn for fast neutrons have been measured in an energy range of 3.4 to 4.6 MeV by using the time-of-flight method. Angular distributions of the inelastically scattered neutrons are nearly isotropic in all cases. These results are discussed on the basis of the Hauser-Feshbach theory. (author) [French] Les sections efficaces differentielles de diffusion de Al, Si, P, S et Zn pour des neutrons rapides ont ete mesurees dans la gamme d'energies de 3,4 a 4,6 MeV, en employant la methode du temps de vol. Les distributions angulaires des neutrons diffuses inelastiquement sont presque isotropes dans tous les cas. Les auteurs analysent ces resultats en se fondant sur la theorie de Hauser-Feshbach. (author) [Spanish] Los autores han medido por el metodo del tiempo de vuelo las secciones eficaces diferenciales de dispersion del Al, Si, P, S y Zn para neutrones rapidos de energia comprendida entre 3,4 y 4,6 MeV. Las distribuciones angulares de los neutrones dispersados inelasticamente son casi isotropicas en todos los casos. Los autores analizan los resultados obtenidos basandose en la teoria de Hauser-Feshbach . (author) [Russian] Differentsial'no e sechenie rasseyaniya alyuminiya, kremniya, fosfora, sery i tsinka dlya bystrykh nejtronov izmereno v diapazone ehnergii ot 3,4 do 4,6 Megaehlektronvol't ispol'zovanie m metoda vremeni proleta. Uglovye raspredeleniya neuprugo rasseyannykh nejtronov yavlyayutsya pochti vo vsekh sluchayakh izotropnymi. Jeti rezul'taty obsuzhdayutsya na osnove teorii Hauzera-Feshbakha. (author)

  11. Si@SiOx/Graphene nanosheet anode materials for lithium-ion batteries synthesized by ball milling process

    Science.gov (United States)

    Tie, Xiaoyong; Han, Qianyan; Liang, Chunyan; Li, Bo; Zai, Jiantao; Qian, Xuefeng

    2017-12-01

    Si@SiOx/Graphene nanosheet (GNS) nanocomposites as high performance anode materials for lithium-ion batteries are synthesized by mechanically blending the mixture of expanded graphite with Si nanoparticles, and characterized by X-ray diffraction, Raman spectrum, field emission scanning electron microscopy and transmission electron microscopy. During the ball milling process, the size of Si nanoparticles will decrease, and the layer of expanded graphite can be peeled off to thin multilayers. Electrochemical performances reveal that the obtained Si@SiOx/GNS nanocomposites exhibit improved cycling stability, high reversible lithium storage capacity and superior rate capability, e.g. the discharge capacity is kept as high as 1055 mAh g-1 within 50 cycles at a current density of 200 mA g-1, retaining 63.6% of the initial value. The high performance of the obtained nanocomposites can be ascribed to GNS prepared through heat-treat and ball-milling methods, the decrease in the size of Si nanoparticles and SiOx layer on Si surface, which enhance the interactions between Si and GNS.