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Sample records for acid etched microtexture

  1. Mandrels For Microtextured Small-Vessel Implants

    Science.gov (United States)

    Deininger, William D.; Gabriel, Stephen B.

    1989-01-01

    Research shows artificial blood-vessel and heart-valve implants made more compatible with their biological environments by use of regularly microtextured surfaces. In new manufacturing process, ion beam etches patterned array of small pillars on mandrel used to mold tubular plastic implant. Pillars create tiny regularly spaced holes in inner surface of tube. Holes expected to provide sites for attachment of healthy lining. Polytetrafluoroethylene (PTFE) used as mandrel material because it can be etched by ion beam.

  2. Human Mesenchymal Stem Cell Morphology and Migration on Microtextured Titanium

    Science.gov (United States)

    Banik, Brittany L.; Riley, Thomas R.; Platt, Christina J.; Brown, Justin L.

    2016-01-01

    The implant used in spinal fusion procedures is an essential component to achieving successful arthrodesis. At the cellular level, the implant impacts healing and fusion through a series of steps: first, mesenchymal stem cells (MSCs) need to adhere and proliferate to cover the implant; second, the MSCs must differentiate into osteoblasts; third, the osteoid matrix produced by the osteoblasts needs to generate new bone tissue, thoroughly integrating the implant with the vertebrate above and below. Previous research has demonstrated that microtextured titanium is advantageous over smooth titanium and PEEK implants for both promoting osteogenic differentiation and integrating with host bone tissue; however, no investigation to date has examined the early morphology and migration of MSCs on these surfaces. This study details cell spreading and morphology changes over 24 h, rate and directionality of migration 6–18 h post-seeding, differentiation markers at 10 days, and the long-term morphology of MSCs at 7 days, on microtextured, acid-etched titanium (endoskeleton), smooth titanium, and smooth PEEK surfaces. The results demonstrate that in all metrics, the two titanium surfaces outperformed the PEEK surface. Furthermore, the rough acid-etched titanium surface presented the most favorable overall results, demonstrating the random migration needed to efficiently cover a surface in addition to morphologies consistent with osteoblasts and preosteoblasts. PMID:27243001

  3. Acid-catalyzed kinetics of indium tin oxide etching

    International Nuclear Information System (INIS)

    We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species

  4. Influence of previous acid etching on interface morphology and bond strength of self-etching adhesive to cavosurface enamel

    OpenAIRE

    Lima, Adriano Fonseca; da Silva, Vinícius Brito; Soares, Giulliana Panfiglio; Marchi, Giselle Maria; Baggio Aguiar, Flávio Henrique; Lovadino, José Roberto

    2012-01-01

    Objectives: The aim of this study was to evaluate the (1) bond strength of a etch-and-rinse and self-etching adhesive systems to cavosurface enamel, (2) influence of the previous acid etching with phosphoric acid 35% to the self-etching adhesive application on bond strength values, and (3) analysis of the cavosurface enamel morphology submitted to different types of conditioning, with the use of a scanning electronic microscope (SEM). Methods: Twenty four human third molars were sectioned on ...

  5. Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

    Directory of Open Access Journals (Sweden)

    Devanna Raghu

    2008-01-01

    Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

  6. SEM ANALYSIS OF THE ACID-ETCHED ENAMEL PATTERNS PROMOTED BY ACIDIC MONOMERS AND PHOSPHORIC ACIDS

    OpenAIRE

    Mirela Sanae Shinohara; Marcelo Tavares de Oliveira; Vinícius Di Hipólito; Marcelo Giannini; Mario Fernando de Goes

    2006-01-01

    ABSTRACT OBJECTIVE: Although self-etching bonding systems (SES) are indicated to prepare dental enamel for bonding, concerns have been expressed regarding their effectiveness. The aim of this study was to analyze the etching pattern (EP) of nine SES in comparison with 35% and 34% phosphoric acid etchants (FA) on intact (IN) and ground (GR) enamel surface. MATERIALS AND METHODS: Twenty-two human third molars were sectioned in mesial-distal and buccal-lingual directions, and four dental fragmen...

  7. Dental zirconia can be etched by hydrofluoric acid.

    Science.gov (United States)

    Sriamporn, Tool; Thamrongananskul, Niyom; Busabok, Chumphol; Poolthong, Sushit; Uo, Motohiro; Tagami, Junji

    2014-01-01

    The surface morphology and crystal structure change of dental zirconia after hydrofluoric acid (HF) etching were evaluated. Four groups of sintered zirconia specimens were 1) control group, 2) immersion in 9.5%HF at 25°C for 1, 2, 3, or 24 h, 3) immersion in 9.5%HF at 80°C for 1, 3, 5, or 30 min and 4) immersion in 48%HF at 25°C for 30 or 60 min. The specimens were evaluated under SEM and XRD. The SEM analysis revealed changes in surface topography for all the HF-etched zirconia specimens. The irregularities surface increased with increasingly longer immersion times and higher etching solution temperatures. The XRD analysis of the HFetched zirconia specimens revealed the presence of a crystalline monoclinic phase along with a tetragonal form. It was concluded HF can etch dental zirconia ceramic, creating micro-morphological changes. Tetragonal-to-monoclinic phase transformation was induced on the etched zirconia surface.

  8. STUDY ON THE EFFECTS OF ACID ETCHING ON AFFECTED ENAMEL

    Directory of Open Access Journals (Sweden)

    Simona Stoleriu

    2011-12-01

    Full Text Available The purpose of the study was to establish and compare the effects of ortophosphoric and hydrochloric acids on the enamel affected by incipient carious lesions with different evolution. Materials and method. 20 teeth with acute and chronic non-cavitary carious lesions were considered for the study. The teeth were sectioned in two halves through the middle of the non-cavitary lesions. The halves of 5 white spot-type lesions and of 5 brown spot-type ones were analyzed as to their surface roughness, on an atomic force microscope (AFM. 5 halves with white spot-type lesions and 5 halves with brown spot-type ones were subjected to acid etching with 37% ortophosphoric acid (Scotchbond etchant gel, 3M ESPE, and an equal number of samples was subjected to the action of 15% hydrochloric acid (ICON-etch, DMG Dental Products Ltd for 2 min, then washed with water and analyzed by AFM. Results. The initial surface roughness of the enamel was higher in the white spot–type carious lesions, comparatively with the brown spot-type ones. For both types of carious non-cavitary lesions, acid etching with phosphoric and hydrochloric acid significantly increased the surface roughness of the enamel, comparatively with the status of the enamel surface prior to etching. The hydrochloric acid led to a surface roughness significantly higher than in the case of ortophosphoric acid, in both acute and chronic non-cavitary carious lesions. The roughness values obtained through etching with ortophosphoric and hydrochloric acid were higher in the white spot-type carious lesions, comparatively with the brown spot-type ones. Conclusions. Both the 37% ortophosphoric acid and the 15% hydrochloric acid determined a significantly higher surface roughness of the enamel affected by acute and chronic non-cavitary carious lesions. The surface condition of the brown spot-type carious lesions was less significantly modified, comparatively with that of the white spot-type lesions, by the

  9. Human Mesenchymal Stem Cell Morphology and Migration on Micro-Textured Titanium

    Directory of Open Access Journals (Sweden)

    Brittany eBanik

    2016-05-01

    Full Text Available The implant used in spinal fusion procedures is an essential component to achieving successful arthrodesis. At the cellular level, the implant impacts healing and fusion through a series of steps: first, mesenchymal stem cells (MSCs need to adhere and proliferate to cover the implant; second, the MSCs must differentiate into osteoblasts; third, the osteoid matrix produced by the osteoblasts needs to generate new bone tissue, thoroughly integrating the implant with the vertebrate above and below. Previous research has demonstrated that micro-textured titanium is advantageous over smooth titanium and PEEK implants for both promoting osteogenic differentiation and integrating with host bone tissue; however, no investigation to date has examined the early morphology and migration of MSCs on these surfaces. This study details cell spreading and morphology changes over 24 hours, rate and directionality of migration 6 to 18 hours post seeding, differentiation markers at 10 days, and the long term morphology of MSCs at 7 days, on micro-textured, acid-etched titanium (Endoskeleton, smooth titanium, and smooth PEEK surfaces. The results demonstrate in all metrics, the two titanium surfaces outperformed the PEEK surface. Furthermore, the rough acid-etched titanium surface presented the most favorable overall results, demonstrating the random migration needed to efficiently cover a surface in addition to morphologies consistent with osteoblasts and preosteoblasts.

  10. Can previous acid etching increase the bond strength of a self-etching primer adhesive to enamel?

    Directory of Open Access Journals (Sweden)

    Ana Paula Morales Cobra Carvalho

    2009-06-01

    Full Text Available Because a greater research effort has been directed to analyzing the adhesive effectiveness of self etch primers to dentin, the aim of this study was to evaluate, by microtensile testing, the bond strength to enamel of a composite resin combined with a conventional adhesive system or with a self-etching primer adhesive, used according to its original prescription or used with previous acid etching. Thirty bovine teeth were divided into 3 groups with 10 teeth each (n= 10. In one of the groups, a self-etching primer (Clearfil SE Bond - Kuraray was applied in accordance with the manufacturer's instructions and, in the other, it was applied after previous acid etching. In the third group, a conventional adhesive system (Scotchbond Multipurpose Plus - 3M-ESPE was applied in accordance with the manufacturer's instructions. The results obtained by analysis of variance revealed significant differences between the adhesive systems (F = 22.31. The self-etching primer (Clearfil SE Bond presented lower enamel bond strength values than the conventional adhesive system (Scotchbond Multipurpose Plus (m = 39.70 ± 7.07 MPa both when used according to the original prescription (m = 27.81 ± 2.64 MPa and with previous acid etching (m = 25.08 ± 4.92 MPa.

  11. Shear bond strength of orthodontic brackets after acid-etched and erbium-doped yttrium aluminum garnet laser-etched

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    Shiva Alavi

    2014-01-01

    Full Text Available Background: Laser ablation has been suggested as an alternative method to acid etching; however, previous studies have obtained contrasting results. The purpose of this study was to compare the shear bond strength (SBS and fracture mode of orthodontic brackets that are bonded to enamel etched with acid and erbium-doped yttrium aluminum garnet (Er:YAG laser. Materials and Methods: In this experimental in vitro study, buccal surfaces of 15 non-carious human premolars were divided into mesial and distal regions. Randomly, one of the regions was etched with 37% phosphoric acid for 15 s and another region irradiated with Er:YAG laser at 100 mJ energy and 20 Hz frequency for 20 s. Stainless steel brackets were then bonded using Transbond XT, following which all the samples were stored in distilled water for 24 h and then subjected to 500 thermal cycles. SBS was tested by a chisel edge, mounted on the crosshead of universal testing machine. After debonding, the teeth were examined under Χ10 magnification and adhesive remnant index (ARI score determined. SBS and ARI scores of the two groups were then compared using t-test and Mann-Whitney U test. Significant level was set at P < 0.05. Results: The mean SBS of the laser group (16.61 ± 7.7 MPa was not significantly different from that of the acid-etched group (18.86 ± 6.09 MPa (P = 0.41. There was no significant difference in the ARI scores between two groups (P = 0.08. However, in the laser group, more adhesive remained on the brackets, which is not suitable for orthodontic purposes. Conclusion: Laser etching at 100 mJ energy produced bond strength similar to acid etching. Therefore, Er:YAG laser may be an alternative method for conventional acid-etching.

  12. Bonding to enamel/dentin etched with phosphoric and hydrofluoric acids.

    Science.gov (United States)

    Barghi, Nassar; Covington, Kendra; Fischer, Dan E; Herbold, Edward T

    2004-10-01

    Repairing porcelain intraorally allows clinicians to provide their patients with a conservative means of treating fractured or debonded restorations. This requires, however, the etching of both porcelain and tooth structure with etching solutions. It is thus relevant to understand the effect that different etching procedures have on shear bond strengths of composite resins to both dentin and enamel structures. Based on the results of this investigation, the authors recommend isolation of tooth structures and the etching of porcelain with hydrofluoric acid.

  13. Bond strengths of all-ceramics: acid vs laser etching.

    Science.gov (United States)

    Gökçe, B; Ozpinar, B; Dündar, M; Cömlekoglu, E; Sen, B H; Güngör, M A

    2007-01-01

    Various applications of dental lasers on dental materials have been proposed for surface modifications. This study evaluated whether laser etching could be an alternative to hydrofluoric acid (HF) etching. One hundred and ten lithia-based all-ceramic specimens (Empress 2) (R: 4 mm, h: 4 mm) were prepared and divided into five groups (n = 22/group). The untreated specimens served as the control, while one of the experimental groups was treated with 9.5% HF for 30 seconds. Three remaining test groups were treated with different laser (Er:YAG laser wavelength:2940 nm, OpusDent) power settings: 300 mJ, 600 mJ and 900 mJ. Ten specimens in each group were luted to the other 10 specimens by a dual-curing cement (Variolink II), and shear-bond strength (SBS) tests were performed (Autograph, crosshead speed: 0.5 mm/minute). The results were statistically analyzed (Kruskal Wallis and Mann Whitney-U, alpha = .05). Mean SBS (MPa) were 31.9 +/- 4.0, 41.4 +/- 4.3, 42.8 +/- 6.2, 29.2 +/- 4.5 and 27.4 +/- 3.8 for the control and HF, 300, 600 and 900 mJ groups, respectively. SEM evaluations revealed different surface morphologies depending on the laser parameters. The differences between HF acid and 300 mJ, when compared with the control, 600 and 900 mJ groups, were significant (p < .05). The 300 mJ laser group exhibited the highest shear-bond strength values, indicating that laser etching could also be used for surface treatments.

  14. Nanostructural effect of acid-etching and fluoride application on human primary and permanent tooth enamels

    International Nuclear Information System (INIS)

    This study examined the nanostructural effects of fluoride application and the acid-etching time with respect to the time elapsed after fluoride application on the primary and permanent tooth enamel layers using atomic force microscopy (AFM) and scanning electron microscopy (SEM). 192 non-carious teeth were assigned to sixteen experimental groups (n = 12) including primary (1 to 8) and permanent (9 to 16) teeth, based on the timing of acid-etching with 37% phosphoric acid after an acidulated phosphate fluoride (APF) pre-treatment. The APF pre-treatment led to a decrease in surface roughness in both the primary and permanent teeth. After the APF treatment, the roughness in both primary and permanent teeth increased with the time elapsed. An acid-etching time of 40 s led to increased nanostructural changes in the enamel surfaces compared to the conventional acid-etching time of 20 s. This acid-etching process led to a higher roughness changes in the primary teeth than in the permanent teeth. To obtain proper enamel adhesion of a sealant after APF pre-treatment, it is important to apply acid-etching two weeks after pre-treatment. In addition, the acid-etching time should be prolonged to apply etching more quickly than two weeks, regardless of the primary and permanent teeth. Highlights: ► APF pre-treatment led to decreased surface roughness in the enamel. ► After APF treatment, the more roughness increased with increasing time elapsed. ► Acid-etching should be performed two weeks after fluoride application.

  15. Nanostructural effect of acid-etching and fluoride application on human primary and permanent tooth enamels

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Youjin [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Choi, Samjin [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Department of Orthodontics, College of Dental Medicine, Kyung Hee University, Seoul (Korea, Republic of); Kim, So Jung [Department of Pediatric Dentistry, College of Dental Medicine, Kyung Hee University, Seoul (Korea, Republic of); Park, Hun-Kuk, E-mail: sigmoidus@khu.ac.kr [Department of Biomedical Engineering and Healthcare Industry Research Institute, College of Medicine, Kyung Hee University, Seoul (Korea, Republic of); Program of Medical Engineering, Kyung Hee University, Seoul (Korea, Republic of)

    2012-07-01

    This study examined the nanostructural effects of fluoride application and the acid-etching time with respect to the time elapsed after fluoride application on the primary and permanent tooth enamel layers using atomic force microscopy (AFM) and scanning electron microscopy (SEM). 192 non-carious teeth were assigned to sixteen experimental groups (n = 12) including primary (1 to 8) and permanent (9 to 16) teeth, based on the timing of acid-etching with 37% phosphoric acid after an acidulated phosphate fluoride (APF) pre-treatment. The APF pre-treatment led to a decrease in surface roughness in both the primary and permanent teeth. After the APF treatment, the roughness in both primary and permanent teeth increased with the time elapsed. An acid-etching time of 40 s led to increased nanostructural changes in the enamel surfaces compared to the conventional acid-etching time of 20 s. This acid-etching process led to a higher roughness changes in the primary teeth than in the permanent teeth. To obtain proper enamel adhesion of a sealant after APF pre-treatment, it is important to apply acid-etching two weeks after pre-treatment. In addition, the acid-etching time should be prolonged to apply etching more quickly than two weeks, regardless of the primary and permanent teeth. Highlights: Black-Right-Pointing-Pointer APF pre-treatment led to decreased surface roughness in the enamel. Black-Right-Pointing-Pointer After APF treatment, the more roughness increased with increasing time elapsed. Black-Right-Pointing-Pointer Acid-etching should be performed two weeks after fluoride application.

  16. Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers

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    Costescu Ruxandra

    2009-01-01

    Full Text Available Abstract The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The “etch suppression” area is well defined by the illumination spot, a feature that can be used to create heterogeneously etched regions with a high degree of control, shown here on patterned samples. Together with the studied self-limitation effect, the technique offers a way to determine the position of rolled-up micro- and nanotubes independently from the predefined lithographic pattern.

  17. Porous silicon-based microtexturing of textured monocrystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saadoun, Moncef; Fethi Boujmil, Mohamed; Aouida, Selma; Ben Rabha, Mohamed; Bessais, Brahim [Photovoltaic Laboratory, Research and Technology Centre of Energy, BP 95, 2050 Hammam-Lif (Tunisia)

    2011-06-15

    This work aims to examine the effects of surface micro-texturing on the performances of pyramidal textured monocrystalline silicon (c-Si) photovoltaic solar cells. The surface micro-textures were performed on the emitter of alkaline-textured PV solar cells without damaging the junction, using the HNO{sub 3}/HF vapor etching (VE) method. Scanning Electron Microscopy (SEM) shows that vapour etched pyramidal textures exhibit a high texture density essentially composed of porous silicon (PS) microstructure. The VE technique notably decreases the surface reflectivity from 12% for alkaline-textured c-Si wafers to about 6% after micro-texturing. Subsequent to VE, the sheet resistance was found to increase indicating a reduction of the dead layer. Fourier Transform Infrared Spectroscopy (FTIR) measurements showed that the PS-based micro-textures are hydrogen-rich, which could have passivation capabilities of the emitter. Taking into account basic phenomena occurring during carrier photogeneration and minority carrier collection, we tried explaining the variation of the short circuit current density (J{sub sc}), the open circuit voltage (V{sub oc}) and the Fill factor (FF) due to PS-microtexturing of the emitter of c-Si solar cells (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Effect of Phosphoric Acid on the Self Etching Primer Bond Strength and its Relation to Oral Health Status

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    E Yassini

    2005-06-01

    Full Text Available Self etching primers, due to ease of manipulation, have been extensively used in recent years. These self etching primers containing a relatively weak acid, may not provide an optimal bond strength. The purpose of the present in-vitro investigation was to evaluate the effects of 37% phosphoric acid application prior to applying self etching primers on composite bond strength. In this experimental study a total of 48 premolar and molar teeth, free of caries, filling, abrasion, crack or other dental defects were selected. The extracted teeth were immediately stored in physiologic serum and divided randomly into two equal groups (n=24.Each group was also divided into two subgroups of twelve teeth each as follows: Subgroup A: enamel was not acid-etched, subgroup B: enamel was acid-etched (group I.Subgroup C: dentin was not acid- etched, subgroup D: dentin was acid-etched (group II.In acid-conditioned groups, water rinsing was followed by the application of a bonding agent (Etch & Primer 3, however for non-acid-treated groups, just the bonding agent was used. Then composite resin blocks (1.5×2 mm and 2.5 mm in diameter were formed and light cured at all directions for 40 seconds, following this the specimens were placed in an Instron universal testing machine to determine shear bond strength. The data were analyzed by t-test. Results showed that no statistically significant differences were between the mean values of etch and un-etch enamel (P=0.232, similarly those of etch and un-etch dentin (P=0.148. In this investigation we concluded that acidic components employed in self-etching primers were of weak type, but self-etching primers could be used without phosphoric acid conditioning.

  19. Marginal microleakage in vitro study on class V cavities prepared with Er:YAG laser and etched with acid or etched with Er:YAG laser and acid

    International Nuclear Information System (INIS)

    Microleakage at the interface between the teeth and the restorative materials remains a problem with composite resin restorations. Microleakage at the gingival margins of class V cavities restorations still challenge as they are usually placed in dentin and/or cementum. Previous studies have shown that the cavity preparation with Er:YAG laser is possible. It has been reported that Er:YAG laser has ability to create irregular surface providing micromechanical retention for adhesive dental restorative materials and to improve marginal sealing. The purpose of this in vitro study was to evaluate the marginal microleakage on class V cavities prepared with Er:YAG laser and etched with acid or with Er:YAG laser and acid, in compared to those prepared and etched conventionally. Thirty human molars were divided into three groups, namely: group I - prepared with Er:YAG laser (KaVo KEY Laser II - Germany) and etched with 37% phosphoric acid; group II - prepared with Er:YAG laser and etched with Er:YAG laser and 37% phosphoric acid; group III (control group) - prepared with high speed drill and etched with 37% phosphoric acid. All cavities were treated with same adhesive system (Single Bond - 3M) and restored with the composite resin (Z100 - 3M), according to the manufacturer's instructions. The specimens were stored at 37 deg C in water for 24 hours, polished with Sof-Lex discs (3M), thermally stressed, sealed with a nail polish coating except for the area of the restoration and 1 mm around it, and immersed in a 50% aqueous solution of silver nitrate for 24 hours. After that, the specimens were rinsed in water, soaked in a photodeveloping solution and exposed to a fluorescent light for 8 hours. The teeth were embedded in an autopolymerizing resin and sectioned longitudinally using a diamond saw microtome under running water. The sections were photographed. The microleakage at the occlusal cavity and at the gingival margins of each specimen was evaluated with scores (0-3) by

  20. Comparative Evaluation of the Etching Pattern of Er,Cr:YSGG & Acid Etching on Extracted Human Teeth-An ESEM Analysis

    Science.gov (United States)

    Mazumdar, Dibyendu; Ranjan, Shashi; Krishna, Naveen Kumar; Kole, Ravindra; Singh, Priyankar; Lakiang, Deirimika; Jayam, Chiranjeevi

    2016-01-01

    Introduction Etching of enamel and dentin surfaces increases the surface area of the substrate for better bonding of the tooth colored restorative materials. Acid etching is the most commonly used method. Recently, hard tissue lasers have been used for this purpose. Aim The aim of the present study was to evaluate and compare the etching pattern of Er,Cr:YSGG and conventional etching on extracted human enamel and dentin specimens. Materials and Methods Total 40 extracted non-diseased teeth were selected, 20 anterior and 20 posterior teeth each for enamel and dentin specimens respectively. The sectioned samples were polished by 400 grit Silicon Carbide (SiC) paper to a thickness of 1.0 ± 0.5 mm. The enamel and dentin specimens were grouped as: GrE1 & GrD1 as control specimens, GrE2 & GrD2 were acid etched and GrE3 & GrD3 were lased. Acid etching was done using Conditioner 36 (37 % phosphoric acid) according to manufacturer instructions. Laser etching was done using Er,Cr:YSGG (Erbium, Chromium : Ytrium Scandium Gallium Garnet) at power settings of 3W, air 70% and water 20%. After surface treatment with assigned agents the specimens were analyzed under ESEM (Environmental Scanning Electron Microscope) at X1000 and X5000 magnification. Results Chi Square and Student “t” statistical analysis was used to compare smear layer removal and etching patterns between GrE2-GrE3. GrD2 and GrD3 were compared for smear layer removal and diameter of dentinal tubule opening using the same statistical analysis. Chi-square test for removal of smear layer in any of the treated surfaces i.e., GrE2-E3 and GrD2-D3 did not differ significantly (p>0.05). While GrE2 showed predominantly type I etching pattern (Chi-square=2.78, 0.050.10) and GrE3 showed type III etching (Chi-square=4.50, p<0.05). The tubule diameters were measured using GSA (Gesellschaft fur Softwareentwicklung und Analytik, Germany) image analyzer and the ‘t’ value of student ‘t’ test was 18.10 which was a

  1. Acid etching and plasma sterilization fail to improve osseointegration of grit blasted titanium implants

    DEFF Research Database (Denmark)

    Mortensen, Mikkel Saksø; Jakobsen, Stig Storgaard; Saksø, Henrik;

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation...

  2. The initial behaviour of freshly etched copper in modertely acid, aerated chloride solutions

    DEFF Research Database (Denmark)

    Bech-Nielsen, Gregers; Jaskula, M.; Chorkendorff, Ib;

    2002-01-01

    When freshly etched samples of various types of copper were exposed in moderately acid, aerated chloride solutions, two phenomena were observed. First the corrosion potential and the pH of the solution decreased over a shorter time, then the potential increased over a long period (600-1500 min), ...

  3. Improved Resin–Zirconia Bonding by Room Temperature Hydrofluoric Acid Etching

    OpenAIRE

    Mun-Hwan Lee; Jun Sik Son; Kyo-Han Kim; Tae-Yub Kwon

    2015-01-01

    This in vitro study was conducted to evaluate the shear bond strength of “non-self-adhesive” resin to dental zirconia etched with hydrofluoric acid (HF) at room temperature and to compare it to that of air-abraded zirconia. Sintered zirconia plates were air-abraded (control) or etched with 10%, 20%, or 30% HF for either 5 or 30 min. After cleaning, the surfaces were characterized using various analytical techniques. Three resin cylinders (Duo-Link) were bonded to each treated plate. All bond...

  4. Effect of EDTA and Phosphoric Acid Pretreatment on the Bonding Effectiveness of Self-Etch Adhesives to Ground Enamel

    Science.gov (United States)

    Ibrahim, Ihab M.; Elkassas, Dina W.; Yousry, Mai M.

    2010-01-01

    Objectives: This in vitro study determined the effect of enamel pretreatment with phosphoric acid and ethylenediaminetetraacetic acid (EDTA) on the bond strength of strong, intermediary strong, and mild self-etching adhesive systems. Methods: Ninety sound human premolars were used. Resin composite cylinders were bonded to flat ground enamel surfaces using three self-etching adhesive systems: strong Adper Prompt L-Pop (pH=0.9–1.0), intermediary strong AdheSE (pH=1.6–1.7), and mild Frog (pH=2). Adhesive systems were applied either according to manufacturer instructions (control) or after pretreatment with either phosphoric acid or EDTA (n=10). After 24 hours, shear bond strength was tested using a universal testing machine at a cross-head speed of 0.5 mm/minute. Ultra-morphological characterization of the surface topography and resin/enamel interfaces as well as representative fractured enamel specimens were examined using scanning electron microscopy (SEM). Results: Neither surface pretreatment statistically increased the mean shear bond strength values of either the strong or the intermediary strong self-etching adhesive systems. However, phosphoric acid pretreatment significantly increased the mean shear bond strength values of the mild self-etching adhesive system. SEM examination of enamel surface topography showed that phosphoric acid pretreatment deepened the same etching pattern of the strong and intermediary strong adhesive systems but converted the irregular etching pattern of the mild self-etching adhesive system to a regular etching pattern. SEM examination of the resin/enamel interface revealed that deepening of the etching pattern was consistent with increase in the length of resin tags. EDTA pretreatment had a negligible effect on ultra-morphological features. Conclusions: Use of phosphoric acid pretreatment can be beneficial with mild self-etching adhesive systems for bonding to enamel. PMID:20922162

  5. Improved Resin–Zirconia Bonding by Room Temperature Hydrofluoric Acid Etching

    Directory of Open Access Journals (Sweden)

    Mun-Hwan Lee

    2015-03-01

    Full Text Available This in vitro study was conducted to evaluate the shear bond strength of “non-self-adhesive” resin to dental zirconia etched with hydrofluoric acid (HF at room temperature and to compare it to that of air-abraded zirconia. Sintered zirconia plates were air-abraded (control or etched with 10%, 20%, or 30% HF for either 5 or 30 min. After cleaning, the surfaces were characterized using various analytical techniques. Three resin cylinders (Duo-Link were bonded to each treated plate. All bonded specimens were stored in water at 37 °C for 24 h, and then half of them were additionally thermocycled 5000 times prior to the shear bond-strength tests (n = 12. The formation of micro- and nano-porosities on the etched surfaces increased with increasing concentration and application time of the HF solution. The surface wettability of zirconia also increased with increasing surface roughness. Higher concentrations and longer application times of the HF solution produced higher bond-strength values. Infiltration of the resin into the micro- and nano-porosities was observed by scanning electron microscopy. This in vitro study suggests that HF slowly etches zirconia ceramic surfaces at room temperature, thereby improving the resin–zirconia bond strength by the formation of retentive sites.

  6. Acid etching does not improve CoCrMo implant osseointegration in a canine implant model.

    Science.gov (United States)

    Jakobsen, Stig S; Baas, Jorgen; Jakobsen, Thomas; Soballe, Kjeld

    2010-01-01

    Induction of bone ingrowth by topographical changes to implant surfaces is an attractive concept. Topographical modifications achieved by acid etching are potentially applicable to complex 3D surfaces. Using clinically relevant implant models, we explored the effect of wet etching porous bead-coated CoCrMo. The study was designed as two paired animal experiments with 10 dogs. Each dog received four implants; one in each medial femoral condyle (loaded 0.75-mm-gap model) and one in each proximal tibia (press-fit). The implants were observed for 6 weeks and were evaluated by biomechanical pushout tests and histomorphometry. We found that wet etching porous bead-coated CoCrMo implants failed to improve implant performance. Moreover, a tendency towards increased fibrous tissue formation, decreased new bone formation, and decreased mechanical fixation was observed. Surface topography on implants is able to stimulate bone-forming cells, but the clinical performance of an implant surface perhaps relies more on 3D geometrical structure and biocompatibility. Caution should be exercised regarding the results of wet etching of porous bead-coated CoCrMo and there is a need for more preclinical trials. PMID:20544657

  7. Acid Etching and Plasma Sterilization Fail to Improve Osseointegration of Grit Blasted Titanium Implants

    OpenAIRE

    Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

    2012-01-01

    Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation. The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy ...

  8. Comparison of shear bond strength of composite resin to enamel surface with laser etching versus acid etching: An in vitro evaluation

    Directory of Open Access Journals (Sweden)

    Upendra A Hoshing

    2014-01-01

    Full Text Available Introduction: The aim of the study is in vitro evaluation of the shear bond strength of composite resin bonded to enamel which is pretreated using acid etchant and Er,Cr:Ysgg. Materials and Methods: 40 extracted human teeth were divided in two groups of 20 each (Groups A and B. In Group A, prepared surface of enamel was etched using 37% phosphoric acid (Scotchbond, 3M. In Group B, enamel was surface treated by a an Er, Cr: YSGG laser system (Waterlase MD, Biolase Technology Inc., San Clemente, CA, USA operating at a wavelength of 2,780 nm and having a pulse duration of 140-200 microsecond with a repetition rate of 20 Hz and 40 Hz. Bonding agent ((Scotchbond Multipurpose, 3M was applied over the test areas on 20 samples of Groups A and B each, and light cured. Composite resin (Ceram X duo Nanoceramic restorative, Densply was applied onto the test areas as a 3 × 3 mm diameter bid, and light cured. The samples were tested for shear bond strength. Results: Mean shear bond strength for acid-etched enamel (26.41 ± 0.66MPa, range 25.155 to 27.150 MPa was significantly higher (P < 0.01 than for laser-etched enamel (16.23 ± 0.71MPa, range 15.233 to 17.334 MPa. Conclusions: For enamel surface, mean shear bond strength of bonded composite obtained after laser etching were significantly lower than those obtained after acid etching.

  9. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel

    Directory of Open Access Journals (Sweden)

    Ana Flávia Soares

    2016-02-01

    Full Text Available ABSTRACT Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10, each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL or diode laser/violet LED (VHL (experimental: Control (C; 35% Total Blanc Office (TBO35HL; 35% Lase Peroxide Sensy (LPS35HL; 25% Lase Peroxide Sensy II (LPS25HL; 15% Lase Peroxide Lite (LPL15HL; and 10% hydrogen peroxide (experimental (EXP10VHL. pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm. ANOVA and Tukey´s tests were applied (α=0.05. Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups.

  10. Influence of pH, bleaching agents, and acid etching on surface wear of bovine enamel

    Science.gov (United States)

    Soares, Ana Flávia; Bombonatti, Juliana Fraga Soares; Alencar, Marina Studart; Consolmagno, Elaine Cristina; Honório, Heitor Marques; Mondelli, Rafael Francisco Lia

    2016-01-01

    ABSTRACT Development of new materials for tooth bleaching justifies the need for studies to evaluate the changes in the enamel surface caused by different bleaching protocols. Objective The aim of this study was to evaluate the bovine dental enamel wear in function of different bleaching gel protocols, acid etching and pH variation. Material and Methods Sixty fragments of bovine teeth were cut, obtaining a control and test areas. In the test area, one half received etching followed by a bleaching gel application, and the other half, only the bleaching gel. The fragments were randomly divided into six groups (n=10), each one received one bleaching session with five hydrogen peroxide gel applications of 8 min, activated with hybrid light, diode laser/blue LED (HL) or diode laser/violet LED (VHL) (experimental): Control (C); 35% Total Blanc Office (TBO35HL); 35% Lase Peroxide Sensy (LPS35HL); 25% Lase Peroxide Sensy II (LPS25HL); 15% Lase Peroxide Lite (LPL15HL); and 10% hydrogen peroxide (experimental) (EXP10VHL). pH values were determined by a pHmeter at the initial and final time periods. Specimens were stored, subjected to simulated brushing cycles, and the superficial wear was determined (μm). ANOVA and Tukey´s tests were applied (α=0.05). Results The pH showed a slight decrease, except for Group LPL15HL. Group LPS25HL showed the highest degree of wear, with and without etching. Conclusion There was a decrease from the initial to the final pH. Different bleaching gels were able to increase the surface wear values after simulated brushing. Acid etching before bleaching increased surface wear values in all groups. PMID:27008254

  11. Effect of hydrofluoric acid etching duration on the roughness and flexural strength of a lithium disilicate-based glass ceramic.

    Science.gov (United States)

    Zogheib, Lucas Villaça; Bona, Alvaro Della; Kimpara, Estevão Tomomitsu; McCabe, John F

    2011-01-01

    The aim of this study was to examine the effect of different acid etching times on the surface roughness and flexural strength of a lithium disilicate-based glass ceramic. Ceramic bar-shaped specimens (16 mm x 2 mm x 2 mm) were produced from ceramic blocks. All specimens were polished and sonically cleaned in distilled water. Specimens were randomly divided into 5 groups (n=15). Group A (control) no treatment. Groups B-E were etched with 4.9% hydrofluoric acid (HF) for 4 different etching periods: 20 s, 60 s, 90 s and 180 s, respectively. Etched surfaces were observed under scanning electron microscopy. Surface profilometry was used to examine the roughness of the etched ceramic surfaces, and the specimens were loaded to failure using a 3-point bending test to determine the flexural strength. Data were analyzed using one-way ANOVA and Tukey's test (?=0.05). All etching periods produced significantly rougher surfaces than the control group (p<0.05). Roughness values increased with the increase of the etching time. The mean flexural strength values were (MPa): A=417 ± 55; B=367 ± 68; C=363 ± 84; D=329 ± 70; and E=314 ± 62. HF etching significantly reduced the mean flexural strength as the etching time increased (p=0.003). In conclusion, the findings of this study showed that the increase of HF etching time affected the surface roughness and the flexural strength of a lithium disilicate-based glass ceramic, confirming the study hypothesis.

  12. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics.

    Science.gov (United States)

    Ramakrishnaiah, Ravikumar; Alkheraif, Abdulaziz A; Divakar, Darshan Devang; Matinlinna, Jukka P; Vallittu, Pekka K

    2016-01-01

    The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces' microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey's test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability.

  13. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics

    Directory of Open Access Journals (Sweden)

    Ravikumar Ramakrishnaiah

    2016-05-01

    Full Text Available The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™; the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching and four experimental groups (20, 40, 80 and 160 s of etching. The etched surfaces’ microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA and the post hoc Tukey’s test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability.

  14. The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics.

    Science.gov (United States)

    Ramakrishnaiah, Ravikumar; Alkheraif, Abdulaziz A; Divakar, Darshan Devang; Matinlinna, Jukka P; Vallittu, Pekka K

    2016-01-01

    The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces' microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey's test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability. PMID:27240353

  15. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin.

    Science.gov (United States)

    Davari, Abdolrahim; Sadeghi, Mostafa; Bakhshi, Hamid

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polymerizing acrylic resin with the buccal surfaces facing up. The buccal surfaces were ground using a diamond bur and polished until the dentin was exposed; the samples were randomly divided into five groups (n=15) according to the surface treatment: (1) acid etching; (2) laser etching; (3) laser etching followed by acid etching; (4) acid etching followed by laser etching and (5) no acid etching and no laser etching (control group). Composite resin rods (Point 4, Kerr Co) were bonded to treated dentin surfaces with an etch-and-rise adhesive system (Optibond FL, Kerr Co) and light-cured.After storage for two weeks at 37°C and 100% humidity and then thermocycling, bond strength was measured with a Zwick Universal Testing Machine at a crosshead speed of 1 mm/min. Data was analyzed using parametric and non-parametric tests (P<0.05). Results. Mean shear bond strength for acid etching (20.1±1.8 MPa) and acid+laser (15.6±3.5 MPa) groups were significantly higher than those for laser+acid (15.6±3.5 MPa), laser etching (14.1±3.4 MPa) and control (8.1±2.1 MPa) groups. However, there were no significant differences between acid etching and acid+laser groups, and between laser+acid and laser groups. Conclusion. When the cavity is prepared by bur, it is not necessary to etch the dentin surface by Er:YAG laser following acid etching and acid etching after laser etching. PMID:23875083

  16. Facile transition from hydrophilicity to superhydrophilicity and superhydrophobicity on aluminum alloy surface by simple acid etching and polymer coating

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wenyong, E-mail: lwy@iccas.ac.cn [Key Laboratory of Advanced Materials and Technology for Packaging, Hunan University of Technology, Zhuzhou 412007 (China); College of Packaging and Materials Engineering, Hunan University of Technology, Zhuzhou 412007 (China); Sun, Linyu; Luo, Yuting [College of Packaging and Materials Engineering, Hunan University of Technology, Zhuzhou 412007 (China); Wu, Ruomei, E-mail: cailiaodian2004@126.com [College of Packaging and Materials Engineering, Hunan University of Technology, Zhuzhou 412007 (China); Jiang, Haiyun [College of Packaging and Materials Engineering, Hunan University of Technology, Zhuzhou 412007 (China); Chen, Yi; Zeng, Guangsheng; Liu, Yuejun [Key Laboratory of Advanced Materials and Technology for Packaging, Hunan University of Technology, Zhuzhou 412007 (China); College of Packaging and Materials Engineering, Hunan University of Technology, Zhuzhou 412007 (China)

    2013-09-01

    The transition from the hydrophilic surface to the superhydrophilic and superhydrophobic surface on aluminum alloy via hydrochloric acid etching and polymer coating was investigated by contact angle (CA) measurements and scanning electron microscope (SEM). The effects of etching and polymer coating on the surface were discussed. The results showed that a superhydrophilic surface was facilely obtained after acid etching for 20 min and a superhydrophobic surface was readily fabricated by polypropylene (PP) coating after acid etching. When the etching time was 30 min, the CA was up to 157{sup o}. By contrast, two other polymers of polystyrene (PS) and polypropylene grafting maleic anhydride (PP-g-MAH) were used to coat the aluminum alloy surface after acid etching. The results showed that the CA was up to 159{sup o} by coating PP-g-MAH, while the CA was only 141{sup o} by coating PS. By modifying the surface with the silane coupling agent before PP coating, the durability and solvent resistance performance of the superhydrophobic surface was further improved. The micro–nano concave–convex structures of the superhydrophilic surface and the superhydrophobic surface were further confirmed by scanning electron microscope (SEM). Combined with the natural hydrophilicity of aluminum alloy, the rough micro–nano structures of the surface led to the superhydrophilicity of the aluminum alloy surface, while the rough surface structures led to the superhydrophobicity of the aluminum alloy surface by combination with the material of PP with the low surface free energy.

  17. Hydrogen content in titanium and a titanium–zirconium alloy after acid etching

    Energy Technology Data Exchange (ETDEWEB)

    Frank, Matthias J.; Walter, Martin S. [Department of Biomaterials, Institute for Clinical Dentistry, University of Oslo, P.O. Box 1109, Blindern, NO-0317 Oslo (Norway); Institute of Medical and Polymer Engineering, Chair of Medical Engineering, Technische Universität München, Boltzmannstrasse 15, 85748 Garching (Germany); Lyngstadaas, S. Petter [Department of Biomaterials, Institute for Clinical Dentistry, University of Oslo, P.O. Box 1109, Blindern, NO-0317 Oslo (Norway); Wintermantel, Erich [Institute of Medical and Polymer Engineering, Chair of Medical Engineering, Technische Universität München, Boltzmannstrasse 15, 85748 Garching (Germany); Haugen, Håvard J., E-mail: h.j.haugen@odont.uio.no [Department of Biomaterials, Institute for Clinical Dentistry, University of Oslo, P.O. Box 1109, Blindern, NO-0317 Oslo (Norway)

    2013-04-01

    Dental implant alloys made from titanium and zirconium are known for their high mechanical strength, fracture toughness and corrosion resistance in comparison with commercially pure titanium. The aim of the study was to investigate possible differences in the surface chemistry and/or surface topography of titanium and titanium–zirconium surfaces after sand blasting and acid etching. The two surfaces were compared by X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, scanning electron microscopy and profilometry. The 1.9 times greater surface hydrogen concentration of titanium zirconium compared to titanium was found to be the major difference between the two materials. Zirconium appeared to enhance hydride formation on titanium alloys when etched in acid. Surface topography revealed significant differences on the micro and nanoscale. Surface roughness was increased significantly (p < 0.01) on the titanium–zirconium alloy. High-resolution images showed nanostructures only present on titanium zirconium. - Highlights: ► TiZr alloy showed increased hydrogen levels over Ti. ► The alloying element Zr appeared to catalyze hydrogen absorption in Ti. ► Surface roughness was significantly increased for the TiZr alloy over Ti. ► TiZr alloy revealed nanostructures not observed for Ti.

  18. Cell Adhesion and in Vivo Osseointegration of Sandblasted/Acid Etched/Anodized Dental Implants

    Directory of Open Access Journals (Sweden)

    Mu-Hyon Kim

    2015-05-01

    Full Text Available The authors describe a new type of titanium (Ti implant as a Modi-anodized (ANO Ti implant, the surface of which was treated by sandblasting, acid etching (SLA, and anodized techniques. The aim of the present study was to evaluate the adhesion of MG-63 cells to Modi-ANO surface treated Ti in vitro and to investigate its osseointegration characteristics in vivo. Four different types of Ti implants were examined, that is, machined Ti (control, SLA, anodized, and Modi-ANO Ti. In the cell adhesion study, Modi-ANO Ti showed higher initial MG-63 cell adhesion and induced greater filopodia growth than other groups. In vivo study in a beagle model revealed the bone-to-implant contact (BIC of Modi-ANO Ti (74.20% ± 10.89% was much greater than those of machined (33.58% ± 8.63%, SLA (58.47% ± 12.89, or ANO Ti (59.62% ± 18.30%. In conclusion, this study demonstrates that Modi-ANO Ti implants produced by sandblasting, acid etching, and anodizing improve cell adhesion and bone ongrowth as compared with machined, SLA, or ANO Ti implants. These findings suggest that the application of Modi-ANO surface treatment could improve the osseointegration of dental implant.

  19. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  20. Noble Gases and Nitrogen Released from a Lunar Soil Pyroxene Separate by Acid Etching

    Science.gov (United States)

    Rider, P. E.

    1993-07-01

    We report initial results from a series of experiments designed to measure recently implanted solar wind (SW) ions in lunar soil mineral grains [1]. An acid-etching technique similar to the CSSE method developed at ETH Zurich was used to make abundance and isotope measurements of the SW noble gas and nitrogen compositions. Among the samples examined was a pyroxene separate from soil 75081. It was first washed with H2O to remove contamination from the sample finger walls and grain surfaces. H2O also acted as a weak acid, releasing gases from near-surface sites. Treatment with H2SO3 followed the water washes. Acid pH (~1.8 to ~1.0) and temperature (~23 degrees C to ~90 degrees C) and duration of acid attack (several minutes to several days) were varied from step to step. Finally, the sample was pyrolyzed in several steps to remove the remaining gases, culminating with a high-temperature pyrolysis at 1200 degrees C. Measurements of the light noble gases were mostly consistent with those from previous CSSE experiments performed on pyroxene [2,3]. It should be noted, however, that the Zurich SEP component was not easily distinguishable in the steps where it was expected to be observed. We suspect our experimental protocol masked the SEP reservoir, preventing us from seeing its distinctive signature. The most interesting results from this sample are its Kr and Xe isotopic and elemental compositions. Pyroxene apparently retains heavy noble gases as well as ilmenite (and plagioclase [4]). The heavy noble gas element ratios from this sample along with those previously reported [5,6] are, however, considerably heavier than the theoretically determined "solar system" values [7,8]. Explanations for the difference include the possibility that the derivations are incorrect, that there is another component of lunar origin mixing with the solar component, or that some type of loss mechanism is altering the noble gas reservoirs of the grains. The Kr and Xe isotopic compositions for

  1. The Effect of Carbon Dioxide (CO2) Laser on Sandblasting with Large Grit and Acid Etching (SLA) Surface

    OpenAIRE

    Foroutan, Tahereh; Ayoubian, Nader

    2013-01-01

    Introduction: The purpose of this study was to investigate the effect of 6W power Carbon Dioxide Laser (CO2) on the biologic compatibility of the Sandblasting with large grit and acid etching (SLA) titanium discs through studying of the Sarcoma Osteogenic (SaOS-2) human osteoblast-like cells viability.

  2. Acid Etching and Surface Coating of Glass-Fiber Posts: Bond Strength and Interface Analysis.

    Science.gov (United States)

    Cecchin, Doglas; Farina, Ana Paula; Vitti, Rafael Pino; Moraes, Rafael Ratto; Bacchi, Ataís; Spazzin, Aloísio Oro

    2016-01-01

    The aim of this study was to evaluate the bond strength of a composite resin to glass-fiber post (GFP) treated or not with phosphoric acid, silane coupling agent, and unfilled resin. GFPs were etched or not with 37% phosphoric acid and different surface coating applied: silane coupling agent, unfilled resin, or both. Composite resin blocks were built around a 4-mm height on the GFP. Unfilled resin (20 s) and composite resin (40 s) were light activated by a light-emitting diode unit. The specimens were stored in distilled water at 37 °C for 24 h. Microtensile bond test was performed using a mechanical testing machine until failure (n=10). The data were analyzed using two-way ANOVA followed by Student-Newman-Keuls' test (padhesive, mixed, or cohesive failures. Additional specimens (n=3) were made to analyze the bonded interfaces by scanning electron microscopy. The statistical analysis showed the factor 'surface coating' was significant (pbond strength was found for the silane and unfilled resin group (padhesive and cohesive failures was found. Differences regarding the homogeneity and thickness of the unfilled resin layer formed by different GFP surface treatments were observed. The application of silane and unfilled resin can improve the bond strength between GFP and resin composite. PMID:27058389

  3. Clinical Use of Laser-Microtextured Abutments: A Case Series.

    Science.gov (United States)

    Shapoff, Cary A; Babushkin, Jeffrey A; Wohl, David J

    2016-01-01

    This article discusses the clinical use of laser-microtextured abutments on dental implant restorations. Four cases are presented, each using one of the four commercially available laser-microtextured abutment styles. Numerous preclinical and clinical studies have shown the positive effects of laser microtexturing on the implant platform in limiting crestal bone loss and benefiting soft tissue stability. Other histologic studies of laser microtexturing on the implant abutment have demonstrated the ability of this specific feature to block epithelial downgrowth and provide a functional connective tissue attachment to the abutment surface. Other abutment designs, styles, and materials have only demonstrated a soft tissue seal with epithelial adhesion and a circular ring of connective tissue fibers around the abutment without direct contact. This article presents clinical and radiographic case examples from a private practice perspective on the longterm successful use of microtextured abutments with respect to crestal bone levels, exceptional soft tissue health, and stability with minimal sulcular depth. PMID:27560683

  4. The bonding of heavy metals on nitric acid-etched coal fly ashes functionalized with 2-mercaptoethanol or thioglycolic acid

    International Nuclear Information System (INIS)

    Coal fly ash is a waste by-product of the coal fire industry, which generates many environmental problems. Alternative uses of this material would provide efficient solutions for this by-product. In this work, nitric acid-etched coal fly ash labelled with 2-mercaptoethanol or thioglycolic acid was assessed for retention of Al(III), As(III), Cu(II), Cd(II), Fe(III), Mn(II), Hg(II), Ni(II), Pb(II) and Zn(II) ions. The bonding characteristics between the organic compounds with the solid support, as well as with the metal ions, were evaluated using various surface analytical techniques. Visualization of the organically-functionalized coal fly ash particle was possible using scanning electron microscopy (SEM), while the elemental composition of the functionalized material, before and after retention of the metal ions, was obtained by energy dispersive (ED)-X ray spectrometry (XRS) and electrothermal atomic absorption spectrometry (ETAAS). Fourier transform infrared (FT-IR) spectrometry and Raman spectrometry were used to obtain information about the functional groups. It was found that some metal(oid) ions (As, Ni, Pb, Zn) were coordinated through the mercaptan group, while other metal(oid)s (Al, Cd, Cu, Fe, Hg, Mn) were apparently bonded to oxygen atoms. A low-cost and effective solid phase retention system for extraction of heavy metals from aqueous solutions was thus developed. - Graphical abstract: Nitric acid-etched coal fly ash labelled with 2-mercaptoethanol or thioglycolic acid was intended for the retention of heavy metals. The bonding characteristics between the organic compounds with the solid support, as well as with the metal ions, were evaluated using surface analytical techniques. - Highlights: • Coal fly ashes were organically-functionalized. • Organically-functionalized coal fly ashes were spectrometrically characterized. • Organically-functionalized coal fly ashes can be used as an effective solid sorbent for metal(oid)s. • This retention

  5. Shear bond strength between porcelain and nano filler composite resin with or without 9% hydrofluoric acid etching

    Directory of Open Access Journals (Sweden)

    Kun Ismiyatin

    2009-06-01

    Full Text Available Background: Reparation technique on restorations with broken or damaged porcelain which are still attached with the teeth are difficult, because it is very hard to remove the porcelain restoration without damaging it, and it needs a long time. Various ways have been developed to repair the broken porcelain, one of them is the use of composite resin as the material for the restoration of fractured porcelain. Repairing porcelain inside the mouth without removing the restoration of the damaged porcelain using light cured composite resins material seems to be an advantageous option because it is relatively simple, has low risks, good esthetically and cheap. Purpose: The objective of this study was to find out the difference of shear bond strength in porcelain reparation using nano filler composite resin with or without 9% hydrofluoric acid etching by using Autograph measuring device. Methods: Twenty pieces of the porcelain samples devided into 2 groups. Group I: etching process using 9% hydrofluoric acid, and group II : without etching process. Result: The data was analyzed using t test in a p value of 0.0001 (p≤0.05, which means there is a significant different of shear bond strength between treated group I and II. The biggest shear bond strength was in treatment group I. Conclusion: The use of 9% hydrofluoric acid on the surface of porcelain can increase the shear bond strength between porcelain and nano filler composite resin.

  6. Shear Bond Strength of an Etch-and-rinse Adhesive to Er:YAG Laser- and/or Phosphoric Acid-treated Dentin

    OpenAIRE

    2013-01-01

    Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of 75 sound maxillary premolars were sectioned below the CEJ and the crowns were embedded in auto-polym...

  7. No Positive Effect of Acid Etching or Plasma Cleaning on Osseointegration of Titanium Implants in a Canine Femoral Condyle Press-Fit Model

    OpenAIRE

    Saksø, H; Jakobsen, T; Saksø, M; Baas, J.; Jakobsen, SS; Soballe, K

    2013-01-01

    Purpose: Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants. Methods: In a randomized, paired animal study, four porous coated Ti implants were inserted into the femurs of each of ten dogs. PC (Porous Coating; control) PC+PSHA (Plasma Sprayed Hydroxyapatite; positive control) PC+ET (Acid Etch) PC+ET+PLCN (Plasma Cleaning) After four weeks mechanical ...

  8. Histological structures and acidic etching sensitivities of the enamels at the occlusal pit parts in the deciduous and permanent teeth

    International Nuclear Information System (INIS)

    The purpose of this study is to compare the histological structures and acidic etching sensitivities of the enamels at the occlusal pit parts between the deciduous molars and permanent molars. They were observed by the polarizing and scanning electron microscopies. The enamel rods were less made slender by EDTA etching and the outlines of the apatite crystals, constituting the enamel rods, were clearer at the occlusal pit part of the deciduous molar than that of the permanent molar in reverse of that at the cusp part. It is thought that the enamel at the occlusal pit part of the permanent molar is more easily decayed by the dental caries than that of the deciduous molar because the former is more easily decayed by the acidic etching than the latter in reverse at the cusp part. It is considered that the thin superficialmost layer of the enamel at the occlusal pit part of the permanent molar has originally higher degree of resistance to the dental caries

  9. Histological structures and acidic etching sensitivities of the enamels at the occlusal pit parts in the deciduous and permanent teeth

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Masashi [Department of Dental Hygiene, Nippon Dental University College at Niigata, Niigata 951-8580 (Japan)]. E-mail: masashi@ngt.ndu.ac.jp; Zheng, Jinhua [Department of Oral Anatomy, School of Dentistry at Niigata, Nippon Dental University, Niigata 951-8580 (Japan); Mori, Kazuhisa [Department of Oral Surgery, School of Dentistry at Niigata, Nippon Dental University, Niigata 951-8580 (Japan); Mataga, Izumi [Department of Oral Surgery, School of Dentistry at Niigata, Nippon Dental University, Niigata 951-8580 (Japan); Kobayashi, Kan [Department of Oral Anatomy, School of Dentistry at Niigata, Nippon Dental University, Niigata 951-8580 (Japan)

    2006-05-15

    The purpose of this study is to compare the histological structures and acidic etching sensitivities of the enamels at the occlusal pit parts between the deciduous molars and permanent molars. They were observed by the polarizing and scanning electron microscopies. The enamel rods were less made slender by EDTA etching and the outlines of the apatite crystals, constituting the enamel rods, were clearer at the occlusal pit part of the deciduous molar than that of the permanent molar in reverse of that at the cusp part. It is thought that the enamel at the occlusal pit part of the permanent molar is more easily decayed by the dental caries than that of the deciduous molar because the former is more easily decayed by the acidic etching than the latter in reverse at the cusp part. It is considered that the thin superficialmost layer of the enamel at the occlusal pit part of the permanent molar has originally higher degree of resistance to the dental caries.

  10. Micro/nanofabrication of poly({sub L}-lactic acid) using focused ion beam direct etching

    Energy Technology Data Exchange (ETDEWEB)

    Oyama, Tomoko Gowa; Nagasawa, Naotsugu; Taguchi, Mitsumasa [Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292 (Japan); Hinata, Toru; Washio, Masakazu [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); Oshima, Akihiro; Tagawa, Seiichi [Research Institute for Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555 (Japan); The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2013-10-14

    Micro/nanofabrication of biocompatible and biodegradable poly({sub L}-lactic acid) (PLLA) using focused Ga ion beam direct etching was evaluated for future bio-device applications. The fabrication performance was determined with different ion fluences and fluxes (beam currents), and it was found that the etching speed and fabrication accuracy were affected by irradiation-induced heat. Focused ion beam (FIB)-irradiated surfaces were analyzed using micro-area X-ray photoelectron spectroscopy. Owing to reactions such as the physical sputtering of atoms and radiation-induced decomposition, PLLA was gradually carbonized with increasing C=C bonds. Controlled micro/nanostructures of PLLA were fabricated with C=C bond-rich surfaces expected to have good cell attachment properties.

  11. Relation entre la microtexture et l'adhérence

    OpenAIRE

    DO, MT

    2005-01-01

    Une synthèse des travaux menés au LCPC depuis 10 ans sur la microtexture des surfaces de chaussée est présentée. Des progrès ont été accomplis dans la mesure et la caractérisation de la microtexture. Les nouveaux descripteurs de la microtexture ont été intégrés dans un modèle de contact pour le calcul d'un coefficient de frottement à basse vitesse. L'apport de la relation entre la microtexture et le frottement à basse vitesse à la prévision de l'adhérence est ensuite traité. La variation de l...

  12. Influence of duration of phosphoric acid pre-etching on bond durability of universal adhesives and surface free-energy characteristics of enamel.

    Science.gov (United States)

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Takamizawa, Toshiki; Watanabe, Hidehiko; Johnson, William W; Latta, Mark A; Miyazaki, Masashi

    2016-08-01

    The purpose of this study was to evaluate the influence of duration of phosphoric acid pre-etching on the bond durability of universal adhesives and the surface free-energy characteristics of enamel. Three universal adhesives and extracted human molars were used. Two no-pre-etching groups were prepared: ground enamel; and enamel after ultrasonic cleaning with distilled water for 30 s to remove the smear layer. Four pre-etching groups were prepared: enamel pre-etched with phosphoric acid for 3, 5, 10, and 15 s. Shear bond strength (SBS) values of universal adhesive after no thermal cycling and after 30,000 or 60,000 thermal cycles, and surface free-energy values of enamel surfaces, calculated from contact angle measurements, were determined. The specimens that had been pre-etched showed significantly higher SBS and surface free-energy values than the specimens that had not been pre-etched, regardless of the aging condition and adhesive type. The SBS and surface free-energy values did not increase for pre-etching times of longer than 3 s. There were no significant differences in SBS values and surface free-energy characteristics between the specimens with and without a smear layer. The results of this study suggest that phosphoric acid pre-etching of enamel improves the bond durability of universal adhesives and the surface free-energy characteristics of enamel, but these bonding properties do not increase for phosphoric acid pre-etching times of longer than 3 s.

  13. Influence of duration of phosphoric acid pre-etching on bond durability of universal adhesives and surface free-energy characteristics of enamel.

    Science.gov (United States)

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Takamizawa, Toshiki; Watanabe, Hidehiko; Johnson, William W; Latta, Mark A; Miyazaki, Masashi

    2016-08-01

    The purpose of this study was to evaluate the influence of duration of phosphoric acid pre-etching on the bond durability of universal adhesives and the surface free-energy characteristics of enamel. Three universal adhesives and extracted human molars were used. Two no-pre-etching groups were prepared: ground enamel; and enamel after ultrasonic cleaning with distilled water for 30 s to remove the smear layer. Four pre-etching groups were prepared: enamel pre-etched with phosphoric acid for 3, 5, 10, and 15 s. Shear bond strength (SBS) values of universal adhesive after no thermal cycling and after 30,000 or 60,000 thermal cycles, and surface free-energy values of enamel surfaces, calculated from contact angle measurements, were determined. The specimens that had been pre-etched showed significantly higher SBS and surface free-energy values than the specimens that had not been pre-etched, regardless of the aging condition and adhesive type. The SBS and surface free-energy values did not increase for pre-etching times of longer than 3 s. There were no significant differences in SBS values and surface free-energy characteristics between the specimens with and without a smear layer. The results of this study suggest that phosphoric acid pre-etching of enamel improves the bond durability of universal adhesives and the surface free-energy characteristics of enamel, but these bonding properties do not increase for phosphoric acid pre-etching times of longer than 3 s. PMID:27315775

  14. Characterization of road microtexture by means of image analysis

    OpenAIRE

    BEN SLIMANE, Anis; Khoudeir, Majdi; Brochard, Jacques; Do, Minh Tan

    2005-01-01

    Road surface microtexture (sub-millimeter scale) is essential for pavement skid-resistance. However, its measurement is only possible in the laboratory on cores taken from trafficked roads, and is time consuming. For efficient road monitoring, it is necessary to develop faster methods usable on-site. Collaboration has been developed for 2 years between LCPC and the laboratory Signal, Image and Communication (SIC) to develop a measurement and characterization method for road microtexture ba...

  15. Surface modification of Y3Al5O12:Ce3+ phosphor by hydrofluoric acid wet etching

    International Nuclear Information System (INIS)

    The surface of Y3Al5O12:Ce3+ phosphor prepared by solid-state reaction was modified by hydrofluoric acid wet etching. The SEM pictures show that the edge-angles-rich surface of the phosphor particles becomes smooth and the XRD spectra show that the surface crystallinity is improved after modification for more than 3 h. Consequently, the photoluminescence emission from phosphor particles with smooth surface presents a higher quantum yield (increased by 5.5%) than that without modification, and a lower backscattering light by the smoothed phosphor particles is also found, which suggests better surface characteristics of light absorption, transparency and crystallinity. -- Highlights: ► HF wet etching way is introduced to modify the YAG phosphor surface for the first time. ► The surface with riched edge angles has become smooth. ► The photoluminescence emission intensity is increased by 5.5%. ► The backscattering light intensity is obviously decreased. ► The wet etching method with HF is appropriate for mass process

  16. Influence of acid-etching and ceramic primers on the repair of a glass ceramic.

    Science.gov (United States)

    Queiroz, J R C; Souza, Rodrigo O A; Nogueira Junior, L; Ozcan, M; Bottino, M A

    2012-01-01

    The objective of this study was to evaluate the influence of different primers on the microtensile bond strength (μTBS) between a feldspathic ceramic and two composites. Forty blocks (6.0 x 6.0 x 5.0 mm³) were prepared from Vita Mark II . After polishing, they were randomly divided into 10 groups according to the surface treatment: Group 1, hydrofluoric acid 10% (HF) + silane; Group 2, CoJet + silane; Group 3, HF + Metal/Zirconia Primer; Group 4, HF + Clearfil Primer; Group 5, HF + Alloy Primer; Group 6, HF + V-Primer; Group 7, Metal/Zirconia Primer; Group 8, Clearfil Primer; Group 9, Alloy Primer; Group 10, V-Primer. After each surface treatment, an adhesive was applied and one of two composite resins was incrementally built up. The sticks obtained from each block (bonded area: 1.0 mm² ± 0.2 mm) were stored in distilled water at 37 degrees C for 30 days and submitted to thermocycling (7,000 cycles; 5 degrees C/55 degrees C ± 1 degree C). The μTBS test was carried out using a universal testing machine (1.0 mm/min). Data were analyzed using ANOVA and a Tukey test (a = 0.05). The surface treatments significantly affected the results (P 0.05). The bond strength means (MPa) were as follows: Group 1a = 29.6; Group 1b = 33.7; Group 2a = 28.9; Group 2b = 27.1; Group 3a = 13.8; Group 3b = 14.9; Group 4a = 18.6; Group 4b = 19.4; Group 5a = 15.3; Group 5b = 16.5; Group 6a = 11; Group 6b = 18; Groups 7a to 10b = 0. While the use of primers alone was not sufficient for adequate bond strengths to feldspathic ceramic, HF etching followed by any silane delivered higher bond strength.

  17. Influence of acid-etching and ceramic primers on the repair of a glass ceramic.

    Science.gov (United States)

    Queiroz, J R C; Souza, Rodrigo O A; Nogueira Junior, L; Ozcan, M; Bottino, M A

    2012-01-01

    The objective of this study was to evaluate the influence of different primers on the microtensile bond strength (μTBS) between a feldspathic ceramic and two composites. Forty blocks (6.0 x 6.0 x 5.0 mm³) were prepared from Vita Mark II . After polishing, they were randomly divided into 10 groups according to the surface treatment: Group 1, hydrofluoric acid 10% (HF) + silane; Group 2, CoJet + silane; Group 3, HF + Metal/Zirconia Primer; Group 4, HF + Clearfil Primer; Group 5, HF + Alloy Primer; Group 6, HF + V-Primer; Group 7, Metal/Zirconia Primer; Group 8, Clearfil Primer; Group 9, Alloy Primer; Group 10, V-Primer. After each surface treatment, an adhesive was applied and one of two composite resins was incrementally built up. The sticks obtained from each block (bonded area: 1.0 mm² ± 0.2 mm) were stored in distilled water at 37 degrees C for 30 days and submitted to thermocycling (7,000 cycles; 5 degrees C/55 degrees C ± 1 degree C). The μTBS test was carried out using a universal testing machine (1.0 mm/min). Data were analyzed using ANOVA and a Tukey test (a = 0.05). The surface treatments significantly affected the results (P 0.05). The bond strength means (MPa) were as follows: Group 1a = 29.6; Group 1b = 33.7; Group 2a = 28.9; Group 2b = 27.1; Group 3a = 13.8; Group 3b = 14.9; Group 4a = 18.6; Group 4b = 19.4; Group 5a = 15.3; Group 5b = 16.5; Group 6a = 11; Group 6b = 18; Groups 7a to 10b = 0. While the use of primers alone was not sufficient for adequate bond strengths to feldspathic ceramic, HF etching followed by any silane delivered higher bond strength. PMID:22414522

  18. Acid etching process for fabrication of Bi2Sr2CaCu2O8+x stack

    Institute of Scientific and Technical Information of China (English)

    ZHANG Jie; CHEN Jian; WU JingBo; KANG Lin; XU WeiWei; WU PeiHeng

    2007-01-01

    We adopted a new method, acid etching process, to fabricate the intrinsic Josephson junctions based on the Bi2Sr2CaCu2O8+x single crystals. By soaking the crystals into the dilute hydrochloric acid, we fabricated a junction stack successfully, and meantime made the surrounding area insulated. A certain concentration of hydrochloric acid was used to maintain the roughness of the modified layer. The current-voltage characteristic was achieved through the four terminal measurement. We could control the junctions' number by changing the concentration and the soaking time. We also found that the thickness of the stack was equal to the average height of the insulation layer. Such a simple, convenient and controllable fabrication method with a high yield might widen the applications of the intrinsic Josephson junctions.

  19. A comparative study of shear bond strength of orthodontic bracket after acid-etched and Er:YAG treatment on enamel surface

    Science.gov (United States)

    Leão, Juliana C.; Mota, Cláudia C. B. O.; Cassimiro-silva, Patricia F.; Gomes, Anderson S. L.

    2016-02-01

    This study aimed to evaluate the shear bond strength (SBS) of teeth prepared for orthodontic bracket bonding with 37% phosphoric acid and Er:YAG laser. Forty bovine incisors were divided into two groups. In Group I, the teeth were conditioned with 37% phosphoric acid and brackets were bonded with Transbond XT; in Group II, the teeth were irradiated with Er:YAG and bonding with Transbond XT. After SBS test, the adhesive remnant index was determined. Adhesion to dental hard tissues after Er:YAG laser etching was inferior to that obtained after acid etching but exceeded what is believed to be clinically sufficient strength, and therefore can be used in patients.

  20. Surface Topographical Changes of a Failing Acid-Etched Long-Term in Function Retrieved Dental Implant.

    Science.gov (United States)

    Monje, Alberto; González-García, Raúl; Fernández-Calderón, María Coronada; Hierro-Oliva, Margarita; González-Martín, María Luisa; Del Amo, Fernando Suarez-Lopez; Galindo-Moreno, Pablo; Wang, Hom-Lay; Monje, Florencio

    2016-02-01

    The aim of the present study was to report the main topographical and chemical changes of a failing 18-year in function retrieved acid-etching implant in the micro- and nanoscales. A partially edentulous 45 year old rehabilitated with a dental implant at 18 years of age exhibited mobility. After careful examination, a 3.25 × 13-mm press-fit dental implant was retrieved. Scanning electron microscope (SEM) analysis was carried out to study topographical changes of the retrieved implant compared with an unused implant with similar topographical characteristics. Moreover, X-ray photoelectron spectroscopy (XPS) analysis was used to study the surface composition of the retrieved failing implant. Clear changes related to the dual dioxide layer are present as visible in ≥×500 magnification. In addition, it was found that, for the retrieved implant, the surface composition consisted mainly of Ti2p, O1s, C1s, and Al2p. Also, a meaningful decrease of N and C was noticed, whereas the peaks of Ti2p, Al2p, and O1s increased when analyzing deeper (up to ×2000s) in the sample. It was shown that the superficial surface of a retrieved press-fit dual acid-etched implant 18 years after placement is impaired. However, the causes and consequences for these changes cannot be determined.

  1. Influence of different acid etchings on the superficial characteristics of Ti sandblasted with Al2O3

    Directory of Open Access Journals (Sweden)

    Bruno Ramos Chrcanovic

    2013-01-01

    Full Text Available Some implant manufactures use Al2O3 instead TiO2 powder to sandblast the machined dental implant, because Al2O3 powder is commercially more easily available and is cheaper than TiO2 powder. However, Al2O3 powder usually leaves aluminum oxide contamination on the surface, which is potentially toxic. In this work, we subjected Ti discs previously sandblasted with Al2O3 powder to 5 different acid etchings in order to verify which treatment is able to remove incorporated particles of Al2O3 from the surface. One group of samples were only sandblasted and served as control. The samples were analyzed by electron microscopy (SEM, EDS, scanning probe microscopy, and grazing incidence XRD. The control group showed presence of Al2O3 on the surface. Three acid etchings were efficient in removing the alumina from the tested samples. Almost all the tested samples showed higher roughness parameters values than the control samples. Titanium hydride was found in almost all test groups. Moreover, the results suggest that there is no incorporation of the whole Al2O3 particle into the titanium surface after the collision, conversely a particle fragmentation occurs and what remains on the titanium surface are Al2O3 residues.

  2. UV-induced graft polymerization of acrylic acid in the sub-micronchannels of oxidized PET track-etched membrane

    Science.gov (United States)

    Korolkov, Ilya V.; Mashentseva, Anastassiya A.; Güven, Olgun; Taltenov, Abzal A.

    2015-12-01

    In this article, we report on functionalization of track-etched membrane based on poly(ethylene terephthalate) (PET TeMs) oxidized by advanced oxidation systems and by grafting of acrylic acid using photochemical initiation technique for the purpose of increasing functionality thus expanding its practical application. Among advanced oxidation processes (H2O2/UV) system had been chosen to introduce maximum concentration of carboxylic acid groups. Benzophenone (BP) photo-initiator was first immobilized on the surfaces of cylindrical pores which were later filled with aq. acrylic acid solution. UV-irradiation from both sides of PET TeMs has led to the formation of grafted poly(acrylic acid) (PAA) chains inside the membrane sub-micronchannels. Effect of oxygen-rich surface of PET TeMs on BP adsorption and subsequent process of photo-induced graft polymerization of acrylic acid (AA) were studied by ESR. The surface of oxidized and AA grafted PET TeMs was characterized by UV-vis, ATR-FTIR, XPS spectroscopies and by SEM.

  3. Effect of hydrofluoric acid concentration on the evolution of photoluminescence characteristics in porous silicon nanowires prepared by Ag-assisted electroless etching method

    KAUST Repository

    Najar, Adel

    2012-01-01

    We report on the structural and optical properties of porous silicon nanowires (PSiNWs) fabricated using silver (Ag) ions assisted electroless etching method. Silicon nanocrystallites with sizes <5 nm embedded in amorphous silica have been observed from PSiNW samples etched using the optimum hydrofluoric acid (HF) concentration. The strongest photoluminescence (PL) signal has been measured from samples etched with 4.8 M of HF, beyond which a significant decreasing in PL emission intensity has been observed. A qualitative model is proposed for the formation of PSiNWs in the presence of Ag catalyst. This model affirms our observations in PL enhancement for samples etched using HF <4.8 M and the eventual PL reduction for samples etched beyond 4.8 M of HF concentration. The enhancement in PL signals has been associated to the formation of PSiNWs and the quantum confinement effect in the Si nanocrystallites. Compared to PSiNWs without Si-O x, the HF treated samples exhibited significant blue PL peak shift of 100 nm. This effect has been correlated to the formation of defect states in the surface oxide. PSiNWs fabricated using the electroless etching method can find useful applications in optical sensors and as anti-reflection layer in silicon-based solar cells. © 2012 American Institute of Physics.

  4. Changes in the surface of bone and acid-etched and sandblasted implants following implantation and removal

    Science.gov (United States)

    Eroglu, Cennet Neslihan; Ertugrul, Abdullah Seckin; Eskitascioglu, Murat; Eskitascioglu, Gurcan

    2016-01-01

    Objective: The aim of this study was to determine whether there are any changes in the surface of bone or implant structures following the removal of a screwed dental implant. Materials and Methods: For this, six individual samples of acid-etched and sandblasted implants from three different manufacturers’ implant systems were used. They were screwed in a D1 bovine bone, and they were removed after primary stabilization. The bone and implant surfaces are evaluated with scanning electron microscope. Results: Through examination of the surfaces of the bone prior to implantation and of the used and unused implant surfaces, it was found that inhomogeneity in the implant surface can cause microcracking in the bone. Conclusions: This is attributed to the stress induced during the implantation of self-tapping implants and suggests that a tap drill may be required in some instances to protect the implant surface. PMID:27011744

  5. Dynamics of Spreading on Micro-Textured Surfaces

    Science.gov (United States)

    Mohammad Karim, Alireza; Rothstein, Jonathan; Kavehpour, Pirouz

    2015-11-01

    Ultrahydrophobic surfaces, due to their large water-repellency characteristic, have a vast variety of applications in technology and nature, such as de-icing of airplane wings, efficiency increase of power plants, and efficiency of pesticides on plants, etc. The significance of ultrahydrophobic surfaces requires enhancing the knowledge on the spreading dynamics on such surfaces. The best way to produce an ultrahydrophobic surface is by patterning of smooth hydrophobic surfaces with micron sized posts. In this research, the micro-textured surfaces have been fabricated by patterning several different sizes of micro-textured posts on Teflon plates. The experimental study has been performed using forced spreading with Tensiometer to obtain the dependencw of dynamic contact angle to the contact line velocity to describe the spreading dynamics of Newtonian liquids on the micro-textured surfaces. The effect of the geometrical descriptions of the micro-posts along with the physical properties of liquids on the spreading dynamics on micro-textured Teflon plates have been also studied.

  6. Redox buffered hydrofluoric acid etchant for the reduction of galvanic attack during release etching of MEMS devices having noble material films

    Science.gov (United States)

    Hankins, Matthew G.

    2009-10-06

    Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

  7. Micro-shear bond strength and surface micromorphology of a feldspathic ceramic treated with different cleaning methods after hydrofluoric acid etching

    Directory of Open Access Journals (Sweden)

    Henrique Caballero STEINHAUSER

    2014-04-01

    Full Text Available Objective: The aim of this study was to evaluate the effect of feldspathic ceramic surface cleaning on micro-shear bond strength and ceramic surface morphology. Material and Methods: Forty discs of feldspathic ceramic were prepared and etched with 10% hydrofluoric acid for 2 minutes. The discs were randomly distributed into five groups (n=8: C: no treatment, S: water spray + air drying for 1 minute, US: immersion in ultrasonic bath for 5 minutes, F: etching with 37% phosphoric acid for 1 minute, followed by 1-minute rinse, F+US: etching with 37% phosphoric acid for 1 minute, 1-minute rinse and ultrasonic bath for 5 minutes. Composite cylinders were bonded to the discs following application of silane and hydrophobic adhesive for micro-shear bond strength testing in a universal testing machine at 0.5 mm/min crosshead speed until failure. Stereomicroscopy was used to classify failure type. Surface micromorphology of each treatment type was evaluated by scanning electron microscopy at 500 and 2,500 times magnification. Results: One-way ANOVA test showed no significant difference between treatments (p=0.3197 and the most common failure types were cohesive resin cohesion followed by adhesive failure. Micro-shear bond strength of the feldspathic ceramic substrate to the adhesive system was not influenced by the different surface cleaning techniques. Absence of or less residue was observed after etching with hydrofluoric acid for the groups US and F+US. Conclusions: Combining ceramic cleaning techniques with hydrofluoric acid etching did not affect ceramic bond strength, whereas, when cleaning was associated with ultrasound, less residue was observed.

  8. In vivo remineralization of acid-etched enamel in non-brushing areas as influenced by fluoridated orthodontic adhesive and toothpaste.

    Science.gov (United States)

    Praxedes-Neto, Otávio José; Borges, Boniek Castillo Dutra; Florêncio-Filho, Cícero; Farias, Arthur Costa Rodrigues; Drennan, John; De Lima, Kenio Costa

    2012-07-01

    This study aimed to evaluate the in vivo remineralization of acid-etched enamel in non-brushing areas as influenced by fluoridated orthodontic adhesive and toothpaste. One hundred and twenty teeth from 30 volunteers were selected. The teeth were assigned to four treatments: no treatment (negative control); 37% phosphoric acid-etching (PAE) (positive control); PAE + resin-modified glass ionomer cement (RMGIC); and, PAE + composite resin. Patients brushed teeth with fluoridated (n = 15) or non-fluoridated (n = 15) toothpastes, so that etched enamel was protected with screens and it was not in contact with the brush bristles. Remineralization was evaluated by means of laser fluorescence (LF), environmental scanning electronic microscopy, and energy dispersive spectrometry after extraction. The LF means were compared by means of Wilcoxon and Mann Whitney tests. Environmental scanning electron microscopy scores were compared among the groups using a Kruskal Wallis test, whereas the Ca/P ratio was evaluated by means of an Analysis of Variance with subparcels (treatments) and Tukey's post-hoc test. There were no statistically significant differences between the tooth pastes and between the orthodontic adhesives evaluated. Most teeth presented only partial enamel remineralization. Therefore, the fluoride released by the RMGIC was not enough to cause increased crystal regrowth in the acid-etched enamel. The use of fluoridated toothpaste did not provide positive additional effect. PMID:22298375

  9. Comparison of Shear Bond Strength of Orthodontic Brackets Bonded to Enamel Prepared By Er:YAG Laser and Conven-tional Acid-Etching

    Directory of Open Access Journals (Sweden)

    M.H. Hosseini

    2012-01-01

    Full Text Available Introduction: The purpose of this study was to compare shear bond strength (SBS of orthodontic brackets bonded to enamel prepared by Er:YAG laser with two different powers and conventional acid-etching.Materials and Methods: Forty-five human premolars extracted for orthodontic purposes were randomly assigned to three groups based on conditioning method: Group 1- conventional etching with 37% phosphoric acid; Group 2- irradiation with Er:YAG laser at 1 W; and Group 3- irradiation with Er:YAG laser at 1.5 W. Metal brackets were bonded on prepared enamel using a light-cured composite. All groups were subjected to thermocycling process. Then, the specimens mounted in auto-cure acryle and shear bond strength were measured using a universal testing machine with a crosshead speed of 0.5 mm per second. After debonding, the amount of resin remaining on the teeth was determined using the adhesive remnant index (ARI scored 1 to 5. One-way analysis of variance was used to compare shear bond strengths and the Kruskal-Wallis test was performed to evaluate differences in the ARI for different etching types.Results: The mean and standard deviation of conventional acid-etch group, 1W laser group and 1.5W laser group was 3.82 ± 1.16, 6.97 ± 3.64 and 6.93 ± 4.87, respectively.Conclusion: The mean SBS obtained with an Er:YAG laser operated at 1W or 1.5W is approximately similar to that of conventional etching. However, the high variability of values in bond strength of irradiated enamel should be considered to find the appropriate parameters for applying Er:YAG laser as a favorable alternative for surface conditioning.

  10. Using 3D Images to Analyse the Microtexture of Aggregates

    OpenAIRE

    NATAADMADJA, Adelia; Wilson, Douglas; COSTELLO, Seosamh; Do, Minh Tan

    2013-01-01

    Skid resistance, whilst being complex, is one of the more controllable factors that road engineers can design and modify to reduce the number of wet pavement and loss of control crashes. However, due to the fact that it deteriorates over time due to polishing and/or abrasion, it is desirable to be able to predict the long term skid resistance performance of aggregates before the road surface is constructed. Skid resistance consists of both microtexture and macrotexture. There are a number of ...

  11. From acid etching treatments to tribocorrosive properties of dental implants: do some experimental results on surface treatments have an influence on the tribocorrosion behaviour of dental implants?

    International Nuclear Information System (INIS)

    Surface treatments of dental implants aim at promoting osseointegration, i.e. the anchorage of the metallic part. Titanium-, grade II–V, based material is used as a bulk material for dental implants. For promoting the anchorage of this metallic biomaterial in human jaw, some strategies have been applied for improving the surface state, i.e. roughness, topography and coatings. A case study, experimental study, is described with the method of acid etching on titanium grade 4, CpTi. The main goal is to find the right proportion in a mixture of two acids in order to obtain the best surface state. Finally, a pure theoretical prediction is quite impossible and some experimental investigations are necessary to improve the surface state. The described acid etching is compared with some other acid etching treatments and some coatings available on dental implants. Thus, the discussion is focused on the tribocorrosion behaviour of titanium-based materials. The purpose of the coating is that the lifetime under tribocorrosion is limited. Moreover, the surgery related to the implantation has a huge impact on the stability of dental implants. Thus, the performance of dental implants depends on factors related to surgery (implantation) that are difficult to predict from the biomaterial characteristics. From the tribocorrosion point of view, i.e. during the mastication step, the titanium material is submitted to some deleterious factors that cause the performance of dental implants to decrease. (paper)

  12. Effect of nano Cu coating on porous Si prepared by acid etching Al-Si alloy powder

    International Nuclear Information System (INIS)

    As a promising anode material for lithium ion battery, nano-Cu coated porous Si powder was fabricated through two stages: first, preparation of porous nano Si fibers by acid-etching Al-Si alloy powder; second, modified by nano-Cu particles using an electroless plating method. The nano-Cu particles on the surface of nano-Si fibers, not only increase the conductivity of material, but also inhibit the fuse process between nano Si fibers during charge/discharge cycling process, resulting in increased cycling stability of the material. In 1 M LiPF6/EC: DMC (1:1) + 1.5 wt% VC solution at current density of 200 mA g−1, the 150th discharge capacity of nano-Cu coated porous Si electrode was 1651 mAh g−1 with coulombic efficiency of 99%. As anode material for lithium ion battery, nano-Cu coated porous Si nano fiber material is easier to prepare, costs less, and produces higher performance, representing a promising approach for high energy lithium ion battery application

  13. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Science.gov (United States)

    Provine, J.; Schindler, Peter; Kim, Yongmin; Walch, Steve P.; Kim, Hyo Jin; Kim, Ki-Hyun; Prinz, Fritz B.

    2016-06-01

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiNx), particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiNx and evaluate the film's WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  14. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

    Directory of Open Access Journals (Sweden)

    J. Provine

    2016-06-01

    Full Text Available The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD of silicon nitride (SiNx, particularly for use a low k dielectric spacer. One of the key material properties needed for SiNx films is a low wet etch rate (WER in hydrofluoric (HF acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD of SiNx and evaluate the film’s WER in 100:1 dilutions of HF in H2O. The remote plasma capability available in PEALD, enabled controlling the density of the SiNx film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiNx of 6.1 Å/min, which is similar to WER of SiNx from LPCVD reactions at 850 °C.

  15. Prospective clinical evaluation of 273 modified acid-etched dental implants: 1- to 5- year results

    Directory of Open Access Journals (Sweden)

    Michele De Franco

    2012-03-01

    Full Text Available Aim: The aim of this study was to evaluate the implant survival and the implant-crown success of implants with surface treated with organic acids. Materials and methods: A total of 273 implants (Implus®, Leader-Novaxa, Milan, Italy were inserted in 63 patients, from June 2006 to June 2010, in a single clinical centre. In each annual follow up session, clinical, radiographic and prosthetic parameters were evaluated. The implant-crown success criteria included the absence of pain, suppuration and clinical mobility, a distance between the implant shoulder and the first visible bone contact (DIB <2.0 mm from the surgery and the absence of prosthetic complications at the implantabutment interface. Prosthetic restorations were 32 fixed partial prostheses, 48 single crowns and 16 fixed full arches. Results: The cumulative survival rate was 95.70% (93.81 maxilla, 98.24% mandible. Among the surviving implants, the implant-crown success was 96.07%. At the 5-year control, the mean DIB was 1.2 mm (± 0.5. Conclusion: Implants with surface treated with organic acids seem to represent a good solution for the prosthetic rehabilitation of partially and completely edentulous patients.

  16. Discovery of Naturally Etched Fission Tracks and Alpha-Recoil Tracks in Submarine Glasses: Reevaluation of a Putative Biosignature for Earth and Mars

    Directory of Open Access Journals (Sweden)

    Jason E. French

    2016-01-01

    Full Text Available Over the last two decades, conspicuously “biogenic-looking” corrosion microtextures have been found to occur globally within volcanic glass of the in situ oceanic crust, ophiolites, and greenstone belts dating back to ~3.5 Ga. These so-called “tubular” and “granular” microtextures are widely interpreted to represent bona fide microbial trace fossils; however, possible nonbiological origins for these complex alteration microtextures have yet to be explored. Here, we reevaluate the origin of these enigmatic microtextures from a strictly nonbiological standpoint, using a case study on submarine glasses from the western North Atlantic Ocean (DSDP 418A. By combining petrographic and SEM observations of corrosion microtextures at the glass-palagonite interface, considerations of the tectonic setting, measurement of U and Th concentrations of fresh basaltic glass by ICP-MS, and theoretical modelling of the present-day distribution of radiation damage in basaltic glass caused by radioactive decay of U and Th, we reinterpret these enigmatic microtextures as the end product of the preferential corrosion/dissolution of radiation damage (alpha-recoil tracks and fission tracks in the glass by seawater, possibly combined with pressure solution etch-tunnelling. Our findings have important implications for geomicrobiology, astrobiological exploration of Mars, and understanding of the long-term breakdown of nuclear waste glass.

  17. Micro-PIXE and micro-RBS characterization of micropores in porous silicon prepared using microwave-assisted hydrofluoric acid etching.

    Science.gov (United States)

    Ahmad, Muthanna; Grime, Geoffrey W

    2013-04-01

    Porous silicon (PS) has been prepared using a microwave-assisted hydrofluoric acid (HF) etching method from a silicon wafer pre-implanted with 5 MeV Cu ions. The use of microbeam proton-induced X-ray emission (micro-PIXE) and microbeam Rutherford backscattering techniques reveals for the first time the capability of these techniques for studying the formation of micropores. The porous structures observed from micro-PIXE imaging results are compared to scanning electron microscope images. It was observed that the implanted copper accumulates in the same location as the pores and that at high implanted dose the pores form large-scale patterns of lines and concentric circles. This is the first work demonstrating the use of microwave-assisted HF etching in the formation of PS.

  18. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    Science.gov (United States)

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C. PMID:27295338

  19. Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid.

    Science.gov (United States)

    Kim, Yongmin; Provine, J; Walch, Stephen P; Park, Joonsuk; Phuthong, Witchukorn; Dadlani, Anup L; Kim, Hyo-Jin; Schindler, Peter; Kim, Kihyun; Prinz, Fritz B

    2016-07-13

    The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposited (ALD) of hydrofluoric acid (HF) etch resistant and electrically insulating films for sidewall spacer processing. Silicon nitride (SiN) has been the prototypical material for this need and extensive work has been conducted into realizing sufficiently lower wet etch rates (WERs) as well as leakage currents to meet industry needs. In this work, we report on the development of plasma-enhanced atomic layer deposition (PEALD) composites of SiN and AlN to minimize WER and leakage current density. In particular, the role of aluminum and the optimum amount of Al contained in the composite structures have been explored. Films with near zero WER in dilute HF and leakage currents density similar to pure PEALD SiN films could be simultaneously realized through composites which incorporate ≥13 at. % Al, with a maximum thermal budget of 350 °C.

  20. Marginal microleakage in vitro study on class V cavities prepared with Er:YAG laser and etched with acid or etched with Er:YAG laser and acid; Estudo in vitro da microinfiltracao marginal em cavidades classe V preparadas com laser de Er:YAG e condicionadas com acido ou com laser de Er:YAG e acido

    Energy Technology Data Exchange (ETDEWEB)

    Tavares, Henrique Dutra Simoes

    2001-07-01

    Microleakage at the interface between the teeth and the restorative materials remains a problem with composite resin restorations. Microleakage at the gingival margins of class V cavities restorations still challenge as they are usually placed in dentin and/or cementum. Previous studies have shown that the cavity preparation with Er:YAG laser is possible. It has been reported that Er:YAG laser has ability to create irregular surface providing micromechanical retention for adhesive dental restorative materials and to improve marginal sealing. The purpose of this in vitro study was to evaluate the marginal microleakage on class V cavities prepared with Er:YAG laser and etched with acid or with Er:YAG laser and acid, in compared to those prepared and etched conventionally. Thirty human molars were divided into three groups, namely: group I - prepared with Er:YAG laser (KaVo KEY Laser II - Germany) and etched with 37% phosphoric acid; group II - prepared with Er:YAG laser and etched with Er:YAG laser and 37% phosphoric acid; group III (control group) - prepared with high speed drill and etched with 37% phosphoric acid. All cavities were treated with same adhesive system (Single Bond - 3M) and restored with the composite resin (Z100 - 3M), according to the manufacturer's instructions. The specimens were stored at 37 deg C in water for 24 hours, polished with Sof-Lex discs (3M), thermally stressed, sealed with a nail polish coating except for the area of the restoration and 1 mm around it, and immersed in a 50% aqueous solution of silver nitrate for 24 hours. After that, the specimens were rinsed in water, soaked in a photodeveloping solution and exposed to a fluorescent light for 8 hours. The teeth were embedded in an autopolymerizing resin and sectioned longitudinally using a diamond saw microtome under running water. The sections were photographed. The microleakage at the occlusal cavity and at the gingival margins of each specimen was evaluated with scores (0

  1. EBSD analysis of the microtexture of Ba-hexaferrite samples

    Science.gov (United States)

    Koblischka-Veneva, A.; Koblischka, M. R.; Schmauch, J.; Chen, Y.; Harris, V. G.

    2010-01-01

    The microtexture of differently prepared Ba-hexaferrite samples is investigated by means of electron backscatter diffraction (EBSD). Kikuchi patterns are obtained with a high image quality, enabling a spatial resolution of the EBSD maps of about 20 nm. The spatially highly resolved EBSD mappings provide additional information (individual grain orientation, misorientation angles, grain size distribution) as compared to the standard analysis techniques, which can contribute to an optimization of the growth process. Furthermore, as the crystallographic orientation of each grain is known, an exact analysis of the grain aspect ratio becomes possible which provides further insight to the microstructural dependence of the magnetic properties of ferrites.

  2. Laser microtexturing of implant surfaces for enhanced tissue integration

    Energy Technology Data Exchange (ETDEWEB)

    Ricci, J.L. [Univ. of Medicine and Dentistry of New Jersey, Newark, NJ (United States). Dept. of Orthodontics; Alexander, H. [Orthogen Corp., Springfield, NJ (United States)

    2001-07-01

    The success or failure of bone and soft tissue-fixed medical devices, such as dental and orthopaedic implants, depends on a complex combination of biological and mechanical factors. These factors are intimately associated with the interface between the implant surface and the surrounding tissue, and are largely determined by the composition, surface chemistry, and surface microgeometry of the implant. The relative contributions of these factors are difficult to assess. This study addresses the contribution of surface microtexture, on a controlled level, to tissue integration. (orig.)

  3. Optical investigation of the intergrowth structure and accessibility of Brønsted acid sites in etched SSZ-13 zeolite crystals by confocal fluorescence microscopy.

    Science.gov (United States)

    Sommer, Linn; Svelle, Stian; Lillerud, Karl Petter; Stöcker, Michael; Weckhuysen, Bert M; Olsbye, Unni

    2010-11-01

    Template decomposition followed by confocal fluorescence microscopy reveals a tetragonal-pyramidal intergrowth of subunits in micrometer-sized nearly cubic SSZ-13 zeolite crystals. In order to accentuate intergrowth boundaries and defect-rich areas within the individual large zeolite crystals, a treatment with an etching NaOH solution is applied. The defective areas are visualized by monitoring the spatial distribution of fluorescent tracer molecules within the individual SSZ-13 crystals by confocal fluorescence microscopy. These fluorescent tracer molecules are formed at the inner and outer crystal surfaces by utilizing the catalytic activity of the zeolite in the oligomerization reaction of styrene derivatives. This approach reveals various types of etching patterns that are an indication for the defectiveness of the studied crystals. We can show that specially one type of crystals, denoted as core-shell type, is highly accessible to the styrene molecules after etching. Despite the large crystal dimensions, the whole core-shell type SSZ-13 crystal is utilized for catalytic reaction. Furthermore, the confocal fluorescence microscopy measurements indicate a nonuniform distribution of the catalytically important Brønsted acid sites underlining the importance of space-resolved measurements. PMID:20496927

  4. Etching of nanostructures on soda-lime glass.

    Science.gov (United States)

    Wang, Elmer; Zhao, Yang

    2014-07-01

    Nanostructures were created on the surface of optical glass using nanosphere lithography. The substrates were etched with vapor-phase hydrofluoric (HF) acid. The etching rate was studied and compared with existing results of wet and dry HF etching. An empirical etching rate formula is found for etching depth up to 300 nm. The subsequent artificial material layer demonstrated enhanced transmittance in optical wavelengths. PMID:24978727

  5. Quantificational Etching of AAO Template

    Institute of Scientific and Technical Information of China (English)

    Guojun SONG; Dong CHEN; Zhi PENG; Xilin SHE; Jianjiang LI; Ping HAN

    2007-01-01

    Ni nanowires were prepared by electrodeposition in porous anodized aluminum oxide (AAO) template from a composite electrolyte solution. Well-ordered Ni nanowire arrays with controllable length were then made by the partial removal of AAO using a mixture of phosphoric acid and chromic acid (6 wt pct H3PO4:1.8 wt pct H3CrO4). The images of Ni nanowire arrays were studied by scanning electron microscopy (SEM) to determine the relationship between etching time and the length of Ni nanowire arrays. The results indicate that the length of nanowires exposed from the template can be accurately controlled by controlling etching time.

  6. Plasma-nitriding assisted micro-texturing into stainless steel molds

    Directory of Open Access Journals (Sweden)

    Aizawa Tatsuhiko

    2015-01-01

    Full Text Available Micro-texturing has grown up to be one of the most promising procedures. This related application required for large-area, fine micro-texturing onto the stainless steel mold materials. A new method other than laser-machining, micro-milling or micro-EDM was awaited for further advancement of this micro-texturing. In the present paper, a plasma nitriding assisted micro-texturing was developed to make various kinds of micro-patterns onto the martensitic stainless steels. First, original patterns were printed onto the surface of substrate by using the ink-jet printer. Then, the masked substrate was subjected to high density plasma nitriding; the un-masked surfaces were nitrided to have higher hardness. This nitrided substrate was further treated by sand-blasting to selectively dig the soft, masked surfaces. Finally, the micro-patterned martensitic stainless steel substrate was fabricated as a mold to duplicate these micro-patterns onto the work materials. The spatial resolution and depth profile controllability of this plasma nitriding assisted micro-texturing was investigated for variety of initial micro-patterns. The original size and dimension of initial micro-patterns were precisely compared with the three dimensional geometry of micro-textures after blasting treatment. The plastic cover case for smart cellular phones was employed to demonstrate how useful this processing is in practice.

  7. Regulation of Osteoblast Differentiation by Acid-Etched and/or Grit-Blasted Titanium Substrate Topography Is Enhanced by 1,25(OH)2D3 in a Sex-Dependent Manner

    OpenAIRE

    Rene Olivares-Navarrete; Hyzy, Sharon L.; Boyan, Barbara D; Zvi Schwartz

    2015-01-01

    This study assessed contributions of micron-scale topography on clinically relevant titanium (Ti) to differentiation of osteoprogenitor cells and osteoblasts; the interaction of this effect with 1α,25-dihydroxyvitamin D3 (1α,25(OH)2D3); and if the effects are sex-dependent. Male and female rat bone marrow cells (BMCs) were cultured on acid-etched (A, R a = 0.87 μm), grit-blasted (GB, R a = 3.90 μm), or grit-blasted/acid-etched (SLA, R a = 3.22 μm) Ti. BMCs were sensitive to surface topography...

  8. Effect of cavity preparation method on microtensile bond strength of a self-etching primer vs phosphoric acid etchant to enamel.

    Science.gov (United States)

    de Souza-Zaroni, Wanessa Christine; Delfino, Carina Sinclér; Ciccone-Nogueira, Juliane Cristina; Palma-Dibb, Regina Guenka; Corona, Silmara Aparecida Milori

    2007-10-01

    This study evaluated the effect of cavity preparation using air abrasion or carbide bur on bond strength to enamel treated with a self-etching primer (Tyrian SPE) or a phosphoric acid etchant. Twenty-four molars were divided into three groups: high-speed; standard handpiece (ST air abrasion) or supersonic handpiece (SP air abrasion) of the same air-abrasive system. The enamel surfaces were treated with one of the two etchants and the same adhesive agent One Step Plus, and then composite buildups were done with Filtek Z250. After 24 h at 37 degrees C, beams (0.8 mm2) were obtained and subjected to tensile stress in a universal testing machine (0.5 mm/min). The data were submitted to analysis of variance and Tukey's test (P cavity preparation method was dependent on the conditioning system used, only when using carbide-bur preparation technique.

  9. Etching of Crystalline ZnO Surfaces upon Phosphonic Acid Adsorption: Guidelines for the Realization of Well-Engineered Functional Self-Assembled Monolayers.

    Science.gov (United States)

    Ostapenko, Alexandra; Klöffel, Tobias; Eußner, Jens; Harms, Klaus; Dehnen, Stefanie; Meyer, Bernd; Witte, Gregor

    2016-06-01

    Functionalization of metal oxides by means of covalently bound self-assembled monolayers (SAMs) offers a tailoring of surface electronic properties such as their work function and, in combination with its large charge carrier mobility, renders ZnO a promising conductive oxide for use as transparent electrode material in optoelectronic devices. In this study, we show that the formation of phosphonic acid-anchored SAMs on ZnO competes with an unwanted chemical side reaction, leading to the formation of surface precipitates and severe surface damage at prolonged immersion times of several days. Combining atomic force microscopy (AFM), X-ray diffraction (XRD), and thermal desorption spectroscopy (TDS), the stability and structure of the aggregates formed upon immersion of ZnO single crystal surfaces of different orientations [(0001̅), (0001), and (101̅0)] in phenylphosphonic acid (PPA) solution were studied. By intentionally increasing the immersion time to more than 1 week, large crystalline precipitates are formed, which are identified as zinc phosphonate. Moreover, the energetics and the reaction pathway of this transformation have been evaluated using density functional theory (DFT), showing that zinc phosphonate is thermodynamically more favorable than phosphonic acid SAMs on ZnO. Precipitation is also found for phosphonic acids with fluorinated aromatic backbones, while less precipitation occurs upon formation of SAMs with phenylphosphinic anchoring units. By contrast, no precipitates are formed when PPA monolayer films are prepared by sublimation under vacuum conditions, yielding smooth surfaces without noticeable etching. PMID:27159837

  10. Copper-assisted, anti-reflection etching of silicon surfaces

    Science.gov (United States)

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  11. Microtexture tracking in hot-deformed polycrystalline aluminium: Experimental results

    Energy Technology Data Exchange (ETDEWEB)

    Quey, R., E-mail: quey@emse.fr [Ecole des Mines de Saint-Etienne, Centre SMS, Laboratoire PECM CNRS UMR 5146, 158 cours Fauriel, 42023 Saint-Etienne, CEDEX 2 (France); Piot, D., E-mail: piot@emse.fr [Ecole des Mines de Saint-Etienne, Centre SMS, Laboratoire PECM CNRS UMR 5146, 158 cours Fauriel, 42023 Saint-Etienne, CEDEX 2 (France); Driver, J.H., E-mail: driver@emse.fr [Ecole des Mines de Saint-Etienne, Centre SMS, Laboratoire PECM CNRS UMR 5146, 158 cours Fauriel, 42023 Saint-Etienne, CEDEX 2 (France)

    2010-03-15

    A split sample of Al-0.1%Mn has been deformed by a series of compression tests in a channel-die at 400 deg. C to a final strain of 1.6. The orientations of 176 grains in a 4x4mm{sup 2} internal surface were followed by high-resolution electron backscatter diffraction at four different strains to compare with crystal plasticity models. Typically 3000 orientations per grain were used to quantify the average lattice rotations of each grain together with their orientation spreads (termed microtexture tracking). The average orientations tend towards the standard {beta}-fibre plane-strain compression texture components, albeit with some variations. The in-grain orientation spreads develop strongly at first, then tend to saturate at high strains. Finally, the influence of grain environment on lattice rotation is examined by means of the rotation 'variability at constant orientation'. On average and at the beginning of the deformation, two grains of the same initial orientation, but different neighbours, would rotate by angles that vary by 25% and axes separated by 37 deg.; their orientations at {epsilon}=1.2 would vary by 12 deg.

  12. Plasma assisted nitriding for micro-texturing onto martensitic stainless steels*

    Directory of Open Access Journals (Sweden)

    Katoh Takahisa

    2015-01-01

    Full Text Available Micro-texturing method has grown up to be one of the most promising procedures to form micro-lines, micro-dots and micro-grooves onto the mold-die materials and to duplicate these micro-patterns onto metallic or polymer sheets via stamping or injection molding. This related application requires for large-area, fine micro-texturing onto the martensitic stainless steel mold-die materials. A new method other than laser-machining, micro-milling or micro-EDM is awaited for further advancement of this micro-texturing. In the present paper, a new micro-texturing method is developed on the basis of the plasma assisted nitriding to transform the two-dimensionally designed micro-patterns to the three dimensional micro-textures in the martensitic stainless steels. First, original patterns are printed onto the surface of stainless steel molds by using the dispenser or the ink-jet printer. Then, the masked mold is subjected to high density plasma nitriding; the un-masked surfaces are nitrided to have higher hardness, 1400 Hv than the matrix hardness, 200 Hv of stainless steels. This nitrided mold is further treated by sand-blasting to selectively remove the soft, masked surfaces. Finally, the micro-patterned martensitic stainless steel mold is fabricated as a tool to duplicate these micro-patterns onto the plastic materials by the injection molding.

  13. Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Wang Huiquan; Jin Zhonghe; Zheng Yangming; Ma Huilian; Wang Yuelin [Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 (China); Li Tie [State Key Laboratory of Transducer Technology, Shanghai Institute of Micro-system and Information Technology, Shanghai 200050 (China)], E-mail: jinzh@zju.edu.cn

    2008-04-30

    Boron is selectively implanted on the surface of an n-type silicon wafer to form a p-type area surrounded by an n-type area. The wafer is then put into a buffered oxide etch solution. It is found that the n-type area can be selectively etched without illumination, with an etching rate lower than 1 nm min{sup -1}, while the p-type area can be selectively etched under illumination with a much higher etching rate. The possible mechanism of the etching phenomenon is discussed. A simple fabrication process of silicon nanowires is proposed according to the above phenomenon. In this process only traditional micro-electromechanical system technology is used. Dimensions of the fabricated nanowire can be controlled well. A 50 nm wide and 50 nm thick silicon nanowire has been formed using this method.

  14. Microstructure and microtexture evolutions of deformed oxide layers on a hot-rolled microalloyed steel

    International Nuclear Information System (INIS)

    Highlights: • Microtexture development of deformed oxide layers is investigated. • Magnetite shares the {0 0 1} fibre texture with wustite. • Hematite develops the {0 0 0 1} basal fibre parallel to the oxide growth. • Stress relief and ion vacancy diffusion mechanism for magnetite seam. - Abstract: Electron backscatter diffraction (EBSD) analysis has been presented to investigate the microstructure and microtexture evolutions of deformed oxide scale formed on a microalloyed steel during hot rolling and accelerated cooling. Magnetite and wustite in oxide layers share a strong {0 0 1} and a weak {1 1 0} fibres texture parallel to the oxide growth. Trigonal hematite develops the {0 0 0 1} basal fibre parallel to the crystallographic plane {1 1 1} in magnetite. Taylor factor estimates have been conducted to elucidate the microtexture evolution. The fine-grained magnetite seam adjacent to the substrate is governed by stress relief and ions vacancy diffusion mechanism

  15. Effect of pre-etching on sealing ability of two current self-etching adhesives

    Directory of Open Access Journals (Sweden)

    K Khosravi

    2005-05-01

    Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

  16. Effect of bulk microstructure of commercially pure titanium on surface characteristics and fatigue properties after surface modification by sand blasting and acid-etching.

    Science.gov (United States)

    Medvedev, A E; Ng, H P; Lapovok, R; Estrin, Y; Lowe, T C; Anumalasetty, V N

    2016-04-01

    Surface modification techniques are widely used to enhance the biological response to the implant materials. These techniques generally create a roughened surface, effectively increasing the surface area thus promoting cell adhesion. However, a negative side effect is a higher susceptibility of a roughened surface to failure due to the presence of multiple stress concentrators. The purpose of the study reported here was to examine the effects of surface modification by sand blasting and acid-etching (SLA) on the microstructure and fatigue performance of coarse-grained and ultrafine-grained (UFG) commercially pure titanium. Finer grain sizes, produced by equal channel angular pressing, resulted in lower values of surface roughness in SLA-processed material. This effect was associated with greater resistance of the UFG structure to plastic deformation. The fatigue properties of UFG Ti were found to be superior to those of coarse-grained Ti and conventional Ti-6Al-4V, both before and after SLA-treatment. PMID:26703365

  17. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study

    Directory of Open Access Journals (Sweden)

    Nam-Ho Kim

    2015-01-01

    Full Text Available This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1 mg/mL. After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated control groups (n = 6 in each group, two animals in each group were placed in split-mouth designed animal models with buccal open defect. At 8 weeks after implant placement, implant stability quotients (ISQ values were recorded and vertical bone height (VBH, mm, bone-to-implant contact ratio (BIC, %, and bone volume (BV, % in the upper 3 mm defect areas were measured. Results. The ISQ values were highest in the 1.0 group. Mean values of VBH (mm, BIC (%, and BV (% were greater in the 0.5 mg/mL and 1.0 mg/mL groups than those in 0.1 and control groups in buccal defect areas. Conclusion. In the open defect area surrounding the SLA implant, coating with 0.5 and 1.0 mg/mL concentrations of rhBMP-2 was more effective, compared with untreated group, in promoting bone regeneration and osseointegration.

  18. Effects of rhBMP-2 on Sandblasted and Acid Etched Titanium Implant Surfaces on Bone Regeneration and Osseointegration: Spilt-Mouth Designed Pilot Study

    Science.gov (United States)

    Kim, Nam-Ho; Lee, So-Hyoun; Ryu, Jae-Jun; Choi, Kyung-Hee; Huh, Jung-Bo

    2015-01-01

    This study was conducted to evaluate effects of rhBMP-2 applied at different concentrations to sandblasted and acid etched (SLA) implants on osseointegration and bone regeneration in a bone defect of beagle dogs as pilot study using split-mouth design. Methods. For experimental groups, SLA implants were coated with different concentrations of rhBMP-2 (0.1, 0.5, and 1 mg/mL). After assessment of surface characteristics and rhBMP-2 releasing profile, the experimental groups and untreated control groups (n = 6 in each group, two animals in each group) were placed in split-mouth designed animal models with buccal open defect. At 8 weeks after implant placement, implant stability quotients (ISQ) values were recorded and vertical bone height (VBH, mm), bone-to-implant contact ratio (BIC, %), and bone volume (BV, %) in the upper 3 mm defect areas were measured. Results. The ISQ values were highest in the 1.0 group. Mean values of VBH (mm), BIC (%), and BV (%) were greater in the 0.5 mg/mL and 1.0 mg/mL groups than those in 0.1 and control groups in buccal defect areas. Conclusion. In the open defect area surrounding the SLA implant, coating with 0.5 and 1.0 mg/mL concentrations of rhBMP-2 was more effective, compared with untreated group, in promoting bone regeneration and osseointegration. PMID:26504807

  19. Early bone response to machined, sandblasting acid etching (SLA) and novel surface-functionalization (SLAffinity) titanium implants: characterization, biomechanical analysis and histological evaluation in pigs.

    Science.gov (United States)

    Chiang, Hsi-Jen; Hsu, Heng-Jui; Peng, Pei-Wen; Wu, Ching-Zong; Ou, Keng-Liang; Cheng, Han-Yi; Walinski, Christopher J; Sugiatno, Erwan

    2016-02-01

    The purpose of the present study was to examine early tissue response and osseointegration in the animal model. The surface morphologies of SLAffinity were characterized using scanning electron microscopy and atomic force microscopy. The microstructures were examined by X-ray diffraction, and hardness was measured by nanoindentation. Moreover, the safety and toxicity properties were evaluated using computer-aided programs and cell cytotoxicity assays. In the animal model, implants were installed in the mandibular canine-premolar area of 12 miniature pigs. Each pig received three implants: machine, sandblasted, large grit, acid-etched, and SLAffinity-treated implants. The results showed that surface treatment did affect bone-to-implant contact (BIC) significantly. At 3 weeks, the SLAffinity-treated implants were found to present significantly higher BIC values than the untreated implants. The SLAffinity treatments enhanced osseointegration significantly, especially at early stages of bone tissue healing. As described above, the results of the present study demonstrate that the SLAffinity treatment is a reliable surface modification method. PMID:26418567

  20. Early bone response to machined, sandblasting acid etching (SLA) and novel surface-functionalization (SLAffinity) titanium implants: characterization, biomechanical analysis and histological evaluation in pigs.

    Science.gov (United States)

    Chiang, Hsi-Jen; Hsu, Heng-Jui; Peng, Pei-Wen; Wu, Ching-Zong; Ou, Keng-Liang; Cheng, Han-Yi; Walinski, Christopher J; Sugiatno, Erwan

    2016-02-01

    The purpose of the present study was to examine early tissue response and osseointegration in the animal model. The surface morphologies of SLAffinity were characterized using scanning electron microscopy and atomic force microscopy. The microstructures were examined by X-ray diffraction, and hardness was measured by nanoindentation. Moreover, the safety and toxicity properties were evaluated using computer-aided programs and cell cytotoxicity assays. In the animal model, implants were installed in the mandibular canine-premolar area of 12 miniature pigs. Each pig received three implants: machine, sandblasted, large grit, acid-etched, and SLAffinity-treated implants. The results showed that surface treatment did affect bone-to-implant contact (BIC) significantly. At 3 weeks, the SLAffinity-treated implants were found to present significantly higher BIC values than the untreated implants. The SLAffinity treatments enhanced osseointegration significantly, especially at early stages of bone tissue healing. As described above, the results of the present study demonstrate that the SLAffinity treatment is a reliable surface modification method.

  1. Catalyst-referred etching of silicon

    Directory of Open Access Journals (Sweden)

    Hideyuki Hara et al

    2007-01-01

    Full Text Available A Si wafer and polysilicon deposited on a Si wafer were planarized using catalyst-referred etching (CARE. Two apparatuses were produced for local etching and for planarization. The local etching apparatus was used to planarize polysilicon and the planarization apparatus was used to planarize Si wafers. Platinum and hydrofluoric acid were used as the catalytic plate and the source of reactive species, respectively. The processed surfaces were observed by optical interferometry, atomic force microscopy (AFM and scanning electron microscopy (SEM. The results indicate that the CARE-processed surface is flat and undamaged.

  2. Er:YAG laser radiation etching of enamel

    Science.gov (United States)

    Dostalova, Tatjana; Jelinkova, Helena; Krejsa, Otakar; Hamal, Karel; Kubelka, Jiri; Prochazka, Stanislav

    1996-12-01

    This study compares the effects of acid treatment and Er:YAG laser radiation on the enamel. The permanent human molars were used. Oval cavities in the buccal surface were prepared and the edges of cavities were irradiated by Er:YAG radiation. The energy of laser was 105 mJ and repetition rate 1 Hz. The radiation was focused by CaF2 lens and the sample was placed in the focus. Ten samples were etched by 35 percent phosphoric acid during 60 s. Than cavities were filled with composite resin following manufacturers directions. By laser etching the structure enamel in section was rougher. The optimal connection between the enamel and composite resin was achieved in 75 percent by acid etching and in 79.2 percent by Er:YAG laser etching. Er:YAG laser etching could be alternative method for etching of enamel.

  3. Improvement of multicrystalline silicon wafer solar cells by post-fabrication wet-chemical etching in phosphoric acid

    Indian Academy of Sciences (India)

    A Mefoued; M Fathi; J Bhatt; A Messaoud; B Palahouane; N Benrekaa

    2011-12-01

    In this study, we have improved electrical characteristics such as the efficiency () and the fill factor (FF) of finished multicrystalline silicon (-Si) solar cells by using a new chemical treatment with a hot phosphoric (H3PO4) acidic solution. These -Si solar cells were made by a standard industrial process with screen-printed contacts and a silicon nitride (SiN) antireflection coating. We have deposited SiN thin layer (80 nm) on -type -Si substrate by the mean of plasma enhanced chemical vapour deposition (PECVD) technique. The reactive gases used as precursors inside PECVD chamber are a mixture of silane (SiH4) and ammonia (NH3) at a temperature of 380°C. The developed H3PO4 chemical surface treatment has improved from 5.4 to 7.7% and FF from 50.4 to 70.8%, this means a relative increase of up to 40% from the initial values of and FF. In order to explain these improvements, physical (AFM, EDX), chemical (FTIR) and optical (spectrophotometer) analyses were done.

  4. Surface Microtextures of Slipping Zone Soil of Some Landslides in the Three Gorges Reservoir District and Their Significance

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The mineral assemblage and content and surface microtextures of slipping zone soil of several landslides in the Three Gorges Reservoir District have been analyzed using the scanning electron microscope (SEM) and X-ray diffractometer (XRD). All the mineral assemblages are similar in these landslides. The main minerals are montmorillonite, illite, kaolinite, chlorite, quartz and feldspar. There are two kinds of surface microtexture in the slipping zone soil, i.e., linear scratches and arcuate scratches. Based on analyses of the changes of the microtextures, one can obtain information about the number, directions and stages of landslide movements. The authors have also studied the mechanism of landslide formation, evaluated the stability of landslides and revival possibility of ancient landslides and forecasted the activity of similar landslides in different districts. The surface microtexture features of stable landslides and mobile landslides are summarized and it is concluded that the existence of filamentous bacteria may result in or increase movements of landslides.

  5. Plasma etching an introduction

    CERN Document Server

    Manos, Dennis M

    1989-01-01

    Plasma etching plays an essential role in microelectronic circuit manufacturing. Suitable for researchers, process engineers, and graduate students, this book introduces the basic physics and chemistry of electrical discharges and relates them to plasma etching mechanisms. Throughout the volume the authors offer practical examples of process chemistry, equipment design, and production methods.

  6. Chemical etching of deformation sub-structures in quartz

    Science.gov (United States)

    Wegner, M. W.; Christie, J. M.

    1983-02-01

    Chemical etching of dislocations has been studied in natural and synthetic quartz single crystals, in deformed synthetic quartz and in naturally and experimentally deformed quartzites. The ability of different etchants to produce polished or preferentially etched surfaces on quartz is described. Dislocation etching was achieved on all crystal planes examined by using a saturated solution of ammonium bifluoride as the etchant. Appropriate etching times were determined for etching quartzites for grain size, subgrain boundaries, deformation lamellae, dislocations and twins. Growth and polished surfaces of synthetic single crystal quartz were similarly etched and dislocation etch pits, characteristic of various orientations were found. The use of ammonium bifluoride proved to be expecially advantageous for the basal plane, producing a polished surface with etch pits, suitable for dislocation etch pit counting. “Double” etch pits have been found on Dauphiné twin boundaries on the basal plane and the first order prism, using this etchant. Slip lines and deformation bands were suitably etched on deformed synthetic crystal surfaces for identification of the slip planes. Other acidic etchants have been explored and their application to the study of deformation structures in quartz crystals is discussed.

  7. Feasibility of hydrofluoric acid etched sand particles for enrichment and determination of polychlorinated biphenyls at trace levels in environmental water samples.

    Science.gov (United States)

    Xing, Han-Zhu; Chen, Xiang-Feng; Wang, Xia; Wang, Ming-Lin; Zhao, Ru-Song

    2014-06-01

    This study aims to investigate the feasibility of etched sand particles being used as solid-phase extraction adsorbents to enrich polychlorinated biphenyls (PCBs), which are typical persistent organic pollutants in the environment, at trace levels. Gas chromatography-tandem mass spectrometry was selected to detect the compounds. Etched sand particles exhibited excellent merits on the enrichment of PCBs. Related important factors affecting extraction efficiencies were investigated and optimized in detail. Under optimized conditions, low limits of detection (0.42 to 3.69 ng L(-1)), wide linear range (10 to 1,000 ng L(-1)), and high repeatability (1.9 to 8.2%) were achieved. The developed method was validated with several real water samples, and satisfactory results were obtained. All of these findings indicate that etched sand particles would be useful for the enrichment and determination of organic pollutants at trace levels in water samples.

  8. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  9. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  10. Metasomatic Mechanism of Weathering-Pedogenesis of Carbonate Rocks: I. Mineralogical and Micro-Textural Evidence

    Institute of Scientific and Technical Information of China (English)

    朱立军; 李景阳

    2002-01-01

    On the basis of mineralogical, geochemical and micro-textural studies of the typical sections of the red weathering crust of carbonate rocks in the subtropical karst areas of Guizhou Province and Guangxi Autonomous Region, we have found, either on a microscopic or on a macroscopical scale and in different positions of the sections, the most direct and most important mineralogical and micro-textural evidence for the development of metasomatism in the process of weathering-pedogenesis of numerous carbonate rocks. This paper also has expounded for the first time and systematically the mechanism of metasomatism involved in the process of weathering pedogenesis of carbonate rocks and proposed the sequence of mineral metasomatic evolution in the process of weathering-pedogenesis of carbonate rocks.

  11. Analysis of microstructure and microtexture in grain-oriented electrical steel (GOES) during manufacturing process

    OpenAIRE

    Volodarskaja, A.; V. Vodárek; Holešinský, J.; Š. Miklušová; Žáček, O.

    2015-01-01

    The final Goss texture in grain-oriented electrical steels (GOES) is affected by microstructure evolution and inheritance during the whole production process. This paper presents the results of detailed microtexture and microstructure investigations on GOES after the basic steps of the industrial AlN + Cu manufacturing process: hot rolling, first cold rolling + decarburization annealing, second cold rolling and final high temperature annealing. Microstructure studies showed that a copper addi...

  12. Teasing apart the contributions of hard dietary items on 3D dental microtextures in primates.

    Science.gov (United States)

    Calandra, Ivan; Schulz, Ellen; Pinnow, Mona; Krohn, Susanne; Kaiser, Thomas M

    2012-07-01

    3D dental microtexture analysis is a powerful tool for reconstructing the diets of extinct primates. This method is based on the comparison of fossils with extant species of known diet. The diets of primates are highly diversified and include fruits, seeds, grass, tree leaves, bark, roots, tubers, and animal resources. Fruits remain the main component in the diets of most primates. We tested whether the proportion of fruit consumed is correlated with dental microtexture. Two methods of microtexture analysis, the scale-sensitive fractal analysis (SSFA) and the Dental Areal Surface Texture Analysis (DASTA; after ISO/FDIS 25178-2), were applied to specimens of eight primate species (Alouatta seniculus, Gorilla gorilla, Lophocebus albigena, Macaca fascicularis, Pan troglodytes, Papio cynocephalus, Pongo abelii, Theropithecus gelada). These species largely differ in the mean annual proportion of fruit (from 0 to 90%) in their diet, as well as in their consumption of other hard items (seeds, bark, and insect cuticles) and of abrasive plants. We find the complexity and heterogeneity of textures (SSFA) to correlate with the proportion of fruits consumed. Textural fill volume (SSFA) indicates the proportion of both fruits and other hard items processed. Furthermore, anisotropy (SSFA) relates to the consumption of abrasive plants like grass and other monocots. ISO parameters valley height, root mean square height, material volume, density of peaks, and closed hill and dale areas (DASTA) describe the functional interaction between food items and enamel facets during mastication. The shallow, plastic deformation of enamel surfaces induced by small hard particles, such as phytoliths or dust, results in flat microtexture relief, whereas the brittle, deep fracture caused by large hard items such as hard seeds creates larger relief.

  13. Teasing apart the contributions of hard dietary items on 3D dental microtextures in primates.

    Science.gov (United States)

    Calandra, Ivan; Schulz, Ellen; Pinnow, Mona; Krohn, Susanne; Kaiser, Thomas M

    2012-07-01

    3D dental microtexture analysis is a powerful tool for reconstructing the diets of extinct primates. This method is based on the comparison of fossils with extant species of known diet. The diets of primates are highly diversified and include fruits, seeds, grass, tree leaves, bark, roots, tubers, and animal resources. Fruits remain the main component in the diets of most primates. We tested whether the proportion of fruit consumed is correlated with dental microtexture. Two methods of microtexture analysis, the scale-sensitive fractal analysis (SSFA) and the Dental Areal Surface Texture Analysis (DASTA; after ISO/FDIS 25178-2), were applied to specimens of eight primate species (Alouatta seniculus, Gorilla gorilla, Lophocebus albigena, Macaca fascicularis, Pan troglodytes, Papio cynocephalus, Pongo abelii, Theropithecus gelada). These species largely differ in the mean annual proportion of fruit (from 0 to 90%) in their diet, as well as in their consumption of other hard items (seeds, bark, and insect cuticles) and of abrasive plants. We find the complexity and heterogeneity of textures (SSFA) to correlate with the proportion of fruits consumed. Textural fill volume (SSFA) indicates the proportion of both fruits and other hard items processed. Furthermore, anisotropy (SSFA) relates to the consumption of abrasive plants like grass and other monocots. ISO parameters valley height, root mean square height, material volume, density of peaks, and closed hill and dale areas (DASTA) describe the functional interaction between food items and enamel facets during mastication. The shallow, plastic deformation of enamel surfaces induced by small hard particles, such as phytoliths or dust, results in flat microtexture relief, whereas the brittle, deep fracture caused by large hard items such as hard seeds creates larger relief. PMID:22705031

  14. Multi-scale microstructural characterization of micro-textured Ti-6Al-4V surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Soboyejo, W.O.; Mercer, C.; Allameh, S.; Nemetski, B. [Princeton Materials Inst., NJ (United States). Dept. of Mechanical and Aerospace Engineering; Marcantonio, N. [Brown Univ., Providence, RI (United States). Div. of Engineering; Ricci, J.L. [Univ. of Medicine and Dentistry of New Jersey, Newark, NJ (United States). Dept. of Orthodontics

    2001-07-01

    This paper presents the results of a multi-scale microstructural characterization of micro-textured Ti-6Al-4V surfaces that are used in biomedical implants. The hierarchies of substructural and microstructural features associated with laser micro-texturing, mechanical polishing and surface blasting with alumina pellets are elucidated via atomic force microscopy (AFM), transmission electron microscopy (TEM), scanning electron microscopy (SEM) and optical microscopy (OM). The nano-scale roughness profiles for the different surface textures are characterized via AFM. Sub-micron precipitates and dislocation substructures associated with wrought processing and laser processing are revealed by TEM. OM and SEM micro- and mesoscale images of the groove structures and then described before discussing the implications of the result for the optimization of laser processing schemes. The implications of the results are examined for the fabrication of micro-textured surfaces that will facilitate the self organization of proteins, and the attachment of mammalian cells to the Ti-6Al-4V surfaces in biomedical implants. (orig.)

  15. Optimization of roughness, reflectance and photoluminescence for acid textured mc-Si solar cells etched at different HF/HNO{sub 3} concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Guerrero-Lemus, R. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Fundacion de Estudios de Economia Aplicada. Catedra Focus-Abengoa. Jorge Juan, 46, 28001 Madrid (Spain)], E-mail: rglemus@ull.es; Diaz-Herrera, B.; Marrero, N. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Mendez-Ramos, J.; Borchert, Dietmar [Departamento de Fisica Fundamental, Experimental Electronica y Sistemas, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Labour und Servicecentre, Institut fuer Solare Energiesysteme, Fraunhofer Institut, Auf der Reihe 2, 45884 Gelsenkirchen (Germany)

    2009-03-15

    The surface structure of multi-crystalline silicon (mc-Si) etched in HF/HNO{sub 3} at different HF/HNO{sub 3} concentrations is optimized for being applied in solar cells. The resulting texture, which determines the efficiency of solar cells, was characterized by means of scanning electron microscopy (SEM) and optical spectroscopy. The roughness of the surface increases and the reflectance decreases when the content of HNO{sub 3} in the etching solution is increased to a limit. The produced etched pits on the surface have been identified by SEM and the surface mean roughness has been characterized by atomic force microscopy (AFM). Also, depending on the concentration of the electrolyte, the mc-Si samples exhibit photoluminescence in the VIS range under UV excitation. The PL reveals the presence of nanocrystals on the surface of the etched samples. The surface structure is also optimized for an adequate placement of the metallic contact on top. Finally the solar cells were performed in order to investigate the dependence of the roughness, reflectance and photoluminescence to the solar efficiency.

  16. Micro-textures for efficient light trapping and improved electrical performance in thin-film nanocrystalline silicon solar cells

    Science.gov (United States)

    Tan, Hairen; Psomadaki, Efthymia; Isabella, Olindo; Fischer, Marinus; Babal, Pavel; Vasudevan, Ravi; Zeman, Miro; Smets, Arno H. M.

    2013-10-01

    Micro-textures with large opening angles and smooth U-shape are applied to nanocrystalline silicon (nc-Si:H) solar cells. The micro-textured substrates result in higher open-circuit-voltage (Voc) and fill-factor (FF) than nano-textured substrates. For thick solar cells, high Voc and FF are maintained. Particularly, the Voc only drops from 564 to 541 mV as solar cell thickness increases from 1 to 5 μm. The improvement in electrical performance of solar cells is ascribed to the growth of dense nc-Si:H layers free from defective filaments on micro-textured substrates. Thereby, micromorph tandem solar cells with an initial efficiency of 13.3%, Voc = 1.464 V, and FF = 0.759 are obtained.

  17. Spatial variation of the etch rate for deep etching of silicon by reactive ion etching

    DEFF Research Database (Denmark)

    Andersen, Bo Asp Møller; Hansen, Ole; Kristensen, Martin

    1997-01-01

    . It was found that, for a constant load of silicon exposed to the plasma, the etch rate variation can be controlled through the applied rf power, the chamber pressure, and the gas mixture. It was also found that the etch rate uniformity varies with the load of silicon exposed to the plasma. The result......The macroscopic uniformity of deep etching into silicon by reactive ion etching (RIE) with a SF6-O-2 plasma was studied. The spatial variation of the etch rate across a 4 inch wafer in a single wafer system is a function of the process parameters and the configuration of the etch chamber...

  18. Effect of Pd ions in the chemical etching solution

    Institute of Scientific and Technical Information of China (English)

    Guixiang Wang; Ning Li; Deyu Li

    2007-01-01

    The acrylonitrile-butadiene-styrene (ABS) surface was etched by dipping it into chromic acid-sulfuric acid containing a trace amount of palladium. The surface roughness, activity, and valence bond were characterized by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The results showed that with the increase of Pd concentration in the etching solution the ABS surface roughness reduced. The ratio of O to C increases and forms a large amount of O=C-O functional groups by dipping into Pd contained etching solution, thus the amount of colloids palladium adsorption increases. The carboxyl group acts as the adsorption site for the Pd/Sn catalyst.

  19. In situ testing of metal micro-textured thermal interface materials in telecommunications applications

    International Nuclear Information System (INIS)

    A metal micro-textured thermal interface material (MMT-TIM) has been developed to address the shortcomings of conventional TIMs for Remote Radio Heat (RRH) applications. The performance of the MMT-TIM was characterized in-situ by monitoring the temperatures of the dominant heat generating devices in an RRH Power Amplifier for a fixed input power. Measurements show that the use of the MMT-TIM results in significantly lower devices temperatures than achieved with the conventionally used graphite pads with a maximum temperature drop of 14.9 °C observed. The effect of power cycling on the long term performance trends is also examined.

  20. The Prediction of Pavement Surface Aggregate Wear and Microtextural Polishing - Progress Report (April 2013)

    OpenAIRE

    NAATADMAJA , Adélia

    2013-01-01

    This report explains the work that the author has done in IFSTTAR, Nantes, France in April 2013. The goals that are aimed to be achieved during her stay are: · Polish and measure the skid resistance values of New Zealand aggregates with the Wehner/Schulze (W/S) device; · Develop a skid resistance deterioration model from the skid resistance values; · Analyse the 3D images of aggregates that are captured by using the InfiniteFocus; · Assess the effects of microtexture evolution on ...

  1. The Prediction of Pavement Surface Aggregate Wear and Microtextural Polishing - Progress Report (March 2013)

    OpenAIRE

    NATAADMADJA, Adelia

    2013-01-01

    This report explains the work that the author has done in IFSTTAR, Nantes, France in March 2013. The goals that are aimed to be achieved during her stay are: · Polish and measure the skid resistance values of New Zealand aggregates with the Wehner/Schulze (W/S) device; · Develop a skid resistance deterioration model from the skid resistance values; · Analyse the 3D images of aggregates that are captured by using the InfiniteFocus; · Assess the effects of microtexture evolution on ...

  2. Microtexture analysis of cold-rolled and annealed twinning-induced plasticity steel

    International Nuclear Information System (INIS)

    The microtexture evolution of cold-rolled and isochronally annealed Fe-24Mn-3Al-2Si-1Ni-0.06C twinning-induced plasticity steel is investigated by electron back-scattering diffraction. Novel deconstruction techniques are applied to cold-rolled and partially recrystallized maps. The formation of cold-rolling texture via composite slip/twin deformation pattern is corroborated by the relatively random spatial distribution of twinned and untwinned grains. Whereas the orientations of the newly nucleated grains are similar to the deformation texture, orientation-dependent, stored energy and second-order twinning contribute to the end-recrystallization texture.

  3. Texture and microtexture evolution in an ultra-low carbon steel during recrystallization

    Energy Technology Data Exchange (ETDEWEB)

    Novillo, E.; Petite, M.M.; Bocos, J.L.; Iza-Mendia, A.; Gutierrez, I. [CEIT (Centro de Estudios e Investigaciones Tecnicas de Gipuzkoa), TECNUN, Paseo Manuel de Lardizabal 15, 20018 Donostia-San Sebastian (Spain)

    2003-08-01

    Recrystallization texture and microtexture in a cold-rolled ultra-low-carbon steel was investigated using X-ray diffraction and electron-back-scattered diffraction based orientation imaging microscopy (ESBD/OIM). Special emphasis was put on the grain coarsening of various texture components during recrystallization: grain selection with an excess in size and number of {l_brace}111{r_brace} recrystallized grains was observed, generating in the final stages of recrystallization a strong {gamma}-fibre that results in good drawing properties. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

  4. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  5. Effect of an Indirect Composite Resin Surface Treatment with Two Types of Lasers: Nd: YAG, Er:YAG and Acid Etching on the Microshear Bond Strength of a Resin Cement

    Directory of Open Access Journals (Sweden)

    AR Daneshkazemi

    2014-04-01

    Conclusion: The two Er:YAG and Nd: YAG lasers increased the bond strength. Though etching alone had no significant effect, the application of the laser Nd:YAG with etching increased the bond strength.

  6. 热酸蚀刻对氧化锆陶瓷初期粘结强度的影响%Effect of hot acid etching on initial bond strength of zirconia to resin

    Institute of Scientific and Technical Information of China (English)

    许少平; 印厚才; 谢海峰

    2012-01-01

    目的:考察两种酸液在加热条件下蚀刻处理对氧化锆陶瓷与树脂初期粘结强度的影响.方法:制作32个氧化锆陶瓷片,分为4组分别进行表面处理.A组:喷砂;B组:喷砂+H2SO4和(NH4)2SO4混合液煮沸下处理30 min+Clearfil Ceramic Primer涂底剂;C组:喷砂+HF和HNO3混合液煮沸下处理30 min+Clearfil Ceramic Primer涂底剂;D组:喷砂+Clearfil Ceramic Primer涂底剂.制备复合树脂柱,以树脂水门汀将其粘固于处理过的氧化锆陶瓷表面.粘结试件水储24 h后,测试剪切粘结强度.扫描电镜观察各处理组的陶瓷表面.结果:A组的粘结强度值最低,D组其次,B、C组的粘结强度值较高且无显著性差异.扫描电镜观察发现两种酸蚀刻后形成了与喷砂不同的粗化表面形态.结论:两种酸液在加热条件下能够对氧化锆陶瓷进行蚀刻粗化,同时可对其初期粘结强度起到增强作用.%Objective:To investigate the initial bond strength of zirconia etched with two kinds of hot acid mixtures to resin. Methods: Total 32 zirconia ceramic blocks were manufactured and divided into 4 groups received different surface treatments. Group A, sandblasting; group B, sandblasting combined with hot H2SO4 and (NH)2SC4 mixture etching 30 min, and applying Clearfil Ceramic Primer; group C, sandblasting combined with HF and HNO3 mixture etching 30 min, and applying Clearfil Ceramic Primer; group D, sandblasting and applying Clearfil Ceramic Primer. Thirty-two composite resin columns were prepared and cemented on the pre-treated zirconia blocks with composite resin cement. Shear bond strength (SBS) test were executed after water storage for 24 hours. The zirconia surfaces treated with different treatments were observed with a scanning electron microscope. Results: The SBS values were lowest in group A, and higher in group B and group C, among 4 groups, and had no significant difference between group B and group C. There were differences in surface

  7. Orthodox etching of HVPE-grown GaN

    Energy Technology Data Exchange (ETDEWEB)

    Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar,R.J.; Muller, S.; Nowak, G.; Grzegory, I.

    2006-08-10

    Orthodox etching of HVPE-grown GaN in molten eutectic of KOH + NaOH (E etch) and in hot sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are formed by the preferential E etching at the outcrops of threading dislocations on the Ga-polar surface of GaN. Using transmission electron microscopy (TEM) as the calibration tool it is shown that the largest pits are formed on screw, intermediate on mixed and the smallest on edge dislocations. This sequence of size does not follow the sequence of the Burgers values (and thus the magnitude of the elastic energy) of corresponding dislocations. This discrepancy is explained taking into account the effect of decoration of dislocations, the degree of which is expected to be different depending on the lattice deformation around the dislocations, i.e. on the edge component of the Burgers vector. It is argued that the large scatter of optimal etching temperatures required for revealing all three types of dislocations in HVPE-grown samples from different sources also depends upon the energetic status of dislocations. The role of kinetics for reliability of etching in both etches is discussed and the way of optimization of the etching parameters is shown.

  8. Brushing abrasion of eroded enamel using bioactive glass toothpaste in different time after acid etching%生物活性玻璃抑制酸蚀后不同时间牙釉质的刷牙磨损

    Institute of Scientific and Technical Information of China (English)

    赵玉龙; 杨德圣

    2015-01-01

    BACKGROUND:Bioactive glass has good biocompatibility, which can promote the remineralization effects of demineralized enamel and enhance the resistance of enamel to erosion. OBJECTIVE:To evaluate the effect of bioactive glass toothpaste versus fluoride toothpaste on brushing abrasion of enamel after acid etching. METHODS:Fifty-six enamel specimens were prepared from bovine incisors, and were embedded in acrylic resin with exposed buccal surface. The exposed area was 6 mm×6 mm and two amalgam fil ings were placed into the enamel and polished. Al specimens were divided into seven groups with eight specimens each. In six groups, specimens were brushed with ordinary toothpaste, fluoride toothpaste, bioactive glass toothpaste immediately and 30 minutes after being eroded by the Sprite. The last one group was brushed with ordinary toothpaste without acid etching as control. The treatment course was cycled 60 times. The surface abrasion loss of the specimens between two amalgam fil ings compared with respective amalgam reference surfaces was final y observed and calculated under laser scanning confocal microscope. RESULTS AND CONCLUSION:The abrasion loss amount of teeth with no acid etching was significantly lower than that with acid etching (P<0.05). The abrasion loss amount of teeth brushed with bioactive glass toothpaste was less than that with fluoride toothpaste at the same brushing time (P<0.05). For the same toothpaste, the abrasion loss amount of teeth brushed 30 minutes after eroded was less than that bushed instantly after eroded (P<0.05). Use of bioactive glass toothpaste can effectively reduce enamel loss caused by acid etching and brushing. The loss amount can also be reduced by brushing teeth 30 minutes after acid etching.%背景:生物活性玻璃具有良好的生物相容性,并具有优异的促进牙齿再矿化和抗酸蚀效果。目的:比较生物活性玻璃牙膏和含氟牙膏对牙釉质酸蚀后不同时间点刷牙

  9. Observation of etch pits in Fe-36wt%Ni Invar alloy

    Institute of Scientific and Technical Information of China (English)

    Dong-zhu Lu; Min-jie Wu

    2014-01-01

    To indirectly investigate the dislocation behavior of Fe−36wt%Ni Invar alloy by the etch pit method, polished Invar specimens were etched by a solution containing 4 g copper sulfate, 20 mL hydrochloric acid, and 20 mL deionized water for 2 min. Etch pits in the etched surfaces were observed. All the etch pits in one specific grain exhibited similar shapes, which are closely related to the grain orienta-tions. These etch pits were characterized as dislocation etch pits. It was observed that etch pits arranged along grain boundaries, gathered at grain tips and strip-like etch pit clusters passed through a number of grains in the pure Invar specimens. After the addition of a small amount of alloying elements, the identification of a single dislocation etch pit is challenging compared with the pure Invar alloy. Thus, the observa-tion of etch pits facilitates the investigation on the dislocation behavior of the pure Invar alloy. In addition, alloying elements may affect the densities and sizes of etch pits.

  10. Effect of Ethylene diamine tetra acetic acid and sodium hypochlorite solution conditioning on microtensile bond strength of one-step self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Shahin Kasraei

    2013-01-01

    Settings and Design: It was an in-vitro study. Materials and Methods: Seventy-two teeth were divided into eight groups and their crowns were ground perpendicular to their long axis to expose dentin. The teeth were polished with silicon-carbide papers. The groups were treated as follows: No conditioning, 0.5-M EDTA conditioning, 2.5% NaOCl conditioning, NaOCl + EDTA conditioning. The surfaces were rinsed and blot-dried. Clearfil S3 and I-Bond were applied according to manufacturers′ instructions and restored with Z100 composite. After 500 cycles of thermo-cycling between 5±C and 55±C, the samples were sectioned and tested for μTBS. Statistical Analysis: Data were analyzed by two-way ANOVA and Tukey-HSD test. Results: The highest μTBS was recorded with Clearfil S3 + NaOCl + EDTA, and the lowest was recorded with I-Bond without conditioning. μTBS in EDTA-and EDTA + NaOCl-treated groups was significantly higher than the control and NaOCl-conditioned groups. Conclusions: Application of EDTA or EDTA + NaOCl before one-step self-etch adhesives increased μTBS.

  11. Analysis of microstructure and microtexture in grain-oriented electrical steel (GOES during manufacturing process

    Directory of Open Access Journals (Sweden)

    A. Volodarskaja

    2015-10-01

    Full Text Available The final Goss texture in grain-oriented electrical steels (GOES is affected by microstructure evolution and inheritance during the whole production process. This paper presents the results of detailed microtexture and microstructure investigations on GOES after the basic steps of the industrial AlN + Cu manufacturing process: hot rolling, first cold rolling + decarburization annealing, second cold rolling and final high temperature annealing. Microstructure studies showed that a copper addition to GOES affected solubility of sulphides. Copper rich sulphides dissolved during hot rolling and re-precipitated during decarburization annealing. An intensive precipitation of AlN and Si3N4 took place during decarburization annealing. No ε - Cu precipitation was detected. After high temperature annealing the misorientation of individual grains reached up to 8°.

  12. STUDY ON MICROTEXTURE OF COKE PRODUCED FROM CONVERTING LIGNITE BY USING CARBON MONOXIDE AND WATER

    Institute of Scientific and Technical Information of China (English)

    王洁; 郭黔杰

    1992-01-01

    Lignite,generally containing high levels of side chains and oxyfunctional groups,cannot lead to the formation of ordered coke texture. Changes in the properties of the lack of plasticity and fluidity during carbonization using a mixture of carbon monoxide and water conversion process were studied by the microscope photometry,by plotting Rmnx values against Rm,Rmin and bireflectance, as well as quantitative estimation of the optical anisotropy, based on 500 pointcounts. The classification of the carbon forms of this converted lignite is proposed as follows: Isotropic ,Mosaic ,Fibrous ,Flow & Leaf,Mesophase-sphere ,Fusitic ,Inertic ,Pore & fissure. This microtextures of coke were also analysed by using X-ray diffraction. It reveals that the values of diffractional angle,interlayer spacing (002) and the height of the crystallite are in good relationship with the degree of polymerization from the original lignite to its water gas shift reaction products.

  13. Shock-thermal history of Kavarpura IVA iron: Evidences from microtextures and nickel profiling

    Science.gov (United States)

    Ray, Dwijesh; Ghosh, S.; Murty, S. V. S.

    2015-11-01

    We classify Kavarpura iron (fell in August, 2006, in Rajasthan, India), an inclusion-free member of high-Ni IVA group. Widmanstätten pattern and finger-cellular plessites textures characteristic of IVA group are present in Kavarpura. Symmetric and asymmetric textural zoning within the cloudy taenite and plessite refer to long term martensitisation process with mean metallographic cooling rate of 200 °C/Ma. Imprints of variable shock pressure domains (Neumann bands and shock hatched ε kamacite) suggest alteration by up to 600 kb shock pressure. Degeneration of cellular plessites, bending of finger plessites and plastic flowage of taenites bear textural evidences corresponding to post-shock annealing which is further confirmed by Ni profiles across the cloudy taenites and plessites under high shock pressure domains. Based on microtextural evidences and Ni profiling, we suggest Kavarpura had cooled at steady state and subsequently suffered multiple impacts.

  14. Microstructure and microtexture evolution during strain path changes of an initially stable Cu single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Paul, H., E-mail: nmpaul@imim-pan.krakow.pl [Polish Academy of Sciences, Institute of Metallurgy and Materials Science, 25 Reymonta St., 30-059 Krakow (Poland)] [Opole University of Technology, Mechanical Department, 5 Mikolajczyka St., 45-271 Opole (Poland); Maurice, C.; Driver, J.H. [Ecole des Mines de Saint-Etienne, Centre SMS, Laboratoire PECM CNRS UMR 5146, 158 Cours Fauriel, 42023 Saint-Etienne, Cedex 2 (France)

    2010-05-15

    The microstructure and microtexture evolution in a deformed Goss oriented crystal were characterized after a sample rotation and consequent change in strain path, over a range of scales by optical microscopy, high resolution scanning electron microscopy equipped with field emission gun and electron packscattered diffraction facilities and transmission electron microscopy orientation mapping. High purity copper single crystals with initial Goss{l_brace}1 1 0{r_brace}<0 0 1> orientation were channel-die compressed 59% to develop a homogeneous structure composed of two sets of symmetrical primary microbands. New samples with ND rotated orientations of Goss{l_brace}1 1 0{r_brace}<0 0 1>, brass{l_brace}1 1 0{r_brace}<1 1 2>, M{l_brace}1 1 0{r_brace}<1 1 1> and H{l_brace}1 1 0{r_brace}<0 0 1>, were then cut out and further compressed in channel-die by a few per cent. The change in flow stress could be correlated with the change in dislocation substructure and microtexture, particularly along shear bands initiated by the strain path change. In the H{l_brace}1 1 0{r_brace}<0 1 1> and M{l_brace}1 1 0{r_brace}<1 1 1> orientations, the flow stress increased by Taylor factor hardening then decreased by intense macroscopic shear band (MSB) formation. In the softer brass orientation and in the absence of Taylor factor hardening, more diffuse MSB formation occurred. The local rotations in the band were used to deduce the possible local slip systems initiated during the strain path change.

  15. Pining phenomena of an evaporated droplet on the hydrophobic micro-textured surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Dong In; Doh, Seung Woo; Park, Hyun Sun; Moriyama Kiyofumia; Kim, Moo Hwan; Kwak, Ho Jae [POSTECH, Pohang (Korea, Republic of); Ahn, Ho Seon [Incheon National University, Incheon (Korea, Republic of)

    2015-10-15

    When the decreased contact angle reaches the receding contact angle, the contact radius is reduced while maintaining a constant contact angle, i.e., this evaporation mode is known as the constant contact angle (CCA) mode. The emphasis of the droplet evaporation is that the transition from CCR to CCA modes is relative with the rate of the droplet evaporation, and it is markedly influenced by the surface wettability. In this study, it is focused on the evaporation mode transition. Especially, the transition from CCR to CCA modes is investigated on the hydrophobic microtextured surfaces. On the basis of the thermodynamics, the transition from CCR to CCA mode is theoretically analyzed. The thermodynamic model is developed to estimate the receding contact angle at the evaporation mode transition. Additionally, to compare between the theoretical model and experimental results, it is shown that the experimental receding contact angle is well estimated by the receding contact angle with the theoretical model. This study was performed to investigate the pinning phenomena of an evaporated droplet on the hydrophobic micro-textured surfaces. The pinning phenomena at the contact line were shown theoretically to be due to the most favorable thermodynamics process that caused the Gibbs free energy to rapidly reach an equilibrium state during droplet evaporation. The evaporation mode underwent a transition when the decrease in the Gibbs free energy was equivalent for the CCR and CCA modes. On the basis of the analysis described here, a theoretical model was developed to estimate the receding contact angle at the mode transition as a function of the surface conditions.

  16. Effect of Addition of Al on Crystal Structure Microtexture and Magnetostriction Coefficient in Tb0.3 Dy0.7 Fe1.95 Alloy

    Institute of Scientific and Technical Information of China (English)

    Jiang Liping; Zhao Zengqi; Wu Shuangxia; Huang Jimin; Zuo Liang

    2004-01-01

    The effect of addition of A1 on crystal structure microtexture and magnetostrictioncoefficient in Tb0.3Dy0.7Fe1.95 alloy were studied.The results show that addition of A1 does not change crystal structure of alloy and the precipitates increase in the microtexture as addition of A1 increases.At a certain magnetic field, magnetostriction coefficient decreased as addition of Al increased.

  17. Plasma etching of cesium iodide

    International Nuclear Information System (INIS)

    Thick films of cesium iodide (CsI) are often used to convert x-ray images into visible light. Spreading of the visible light within CsI, however, reduces the resolution of the resulting image. Anisotropic etching of the CsI film into an array of micropixels can improve the image resolution by confining light within each pixel. The etching process uses a high-density inductively coupled plasma to pattern CsI samples held by a heated, rf-biased chuck. Fluorine-containing gases such as CF4 are found to enhance the etch rate by an order of magnitude compared to Ar+ sputtering alone. Without inert-gas ion bombardment, however, the CF4 etch becomes self-limited within a few microns of depth due to the blanket deposition of a passivation layer. Using CF4+Ar continuously removes this layer from the lateral surfaces, but the formation of a thick passivation layer on the unbombarded sidewalls of etched features is observed by scanning electron microscopy. At a substrate temperature of 220 deg. C, the minimum ion-bombardment energy for etching is Ei∼50 eV, and the rate depends on Ei1/2 above 65 eV. In dilute mixtures of CF4 and Ar, the etch rate is proportional to the gas-phase density of atomic fluorine. Above 50% CF4, however, the rate decreases, indicating the onset of net surface polymer deposition. These observations suggest that anisotropy is obtained through the ion-enhanced inhibitor etching mechanism. Etching exhibits an Arrhenius-type behavior in which the etch rate increases from ∼40 nm/min at 40 deg. C to 380 nm/min at 330 deg. C. The temperature dependence corresponds to an activation energy of 0.13±0.01 eV. This activation energy is consistent with the electronic sputtering mechanism for alkali halides

  18. Effect of Pad Surface Micro-Texture on Removal Rate during Interlayer Dielectric Chemical Mechanical Planarization Process

    Science.gov (United States)

    Liao, Xiaoyan; Zhuang, Yun; Borucki, Leonard J.; Cheng, Jiang; Theng, Siannie; Ashizawa, Toranosuke; Philipossian, Ara

    2013-01-01

    The effect of pad surface micro-texture on removal rate in interlayer dielectric chemical mechanical planarization was investigated. Blanket 200-mm oxide wafers were polished on a Dow® IC1000TM K-groove pad conditioned at two different conditioning forces. The coefficient of friction increased slightly (by 7%) while removal rate increased dramatically (by 65%) when conditioning force was increased from 26.7 to 44.5 N. Pad surface micro-texture analysis results showed that pad surface contact area decreased dramatically (by 71%) at the conditioning force of 44.5 N, leading to a sharp increase in the local contact pressure and resulting in a significantly higher removal rate.

  19. Improvement of photocatalytic activity of brookite titanium dioxide nanorods by surface modification using chemical etching

    Science.gov (United States)

    Zhang, Linjie; Menendez-Flores, Victor M.; Murakami, Naoya; Ohno, Teruhisa

    2012-05-01

    Surface morphology of brookite titanium dioxide (TiO2) nanorods was modified by chemical etching with aqueous hydrogen (H2O2)-ammonia (NH3) or sulfuric acid (H2SO4) solution. The brookite nanorods after chemical etching were characterized by TEM, SAED, FE-SEM, XRD and specific surface area measurements. Brookite nanorods after chemical etching with H2O2-NH3 solution exposed new crystal faces in the tips, and nanorods with sharper tips were observed. On the other hand, etching with H2SO4 at 200 °C induced morphological changes in the tip faces and broadened the angle between tip faces as a result of dissolution along the [0 0 1] direction, though brookite nanorods were only slightly etched after etching with H2SO4 at room temperature. Photocatalytic activity of brookite nanorods was tested by toluene decomposition in gas phase under ultraviolet irradiation. Brookite nanorods etched with H2O2-NH3 solution showed higher photocatalytic activity than that of brookite nanorods before etching. In the case of H2SO4 etching at 200 °C, brookite nanorods after etching exhibited lower photocatalytic activity. One reason for this may be that the formation of newly exposed crystal faces by H2O2-NH3 etching improved separation of redox sites due to their strong oxidation ability.

  20. SEM analysis of the acid-etched enamel patterns promoted by acidic monomers and phosphoric acids Avaliação em MEV do padrão de condicionamento do esmalte dental promovido por monômeros ácidos e o ácido fosfórico

    Directory of Open Access Journals (Sweden)

    Mirela Sanae Shinohara

    2006-12-01

    Full Text Available ABSTRACT OBJECTIVE: Although self-etching bonding systems (SES are indicated to prepare dental enamel for bonding, concerns have been expressed regarding their effectiveness. The aim of this study was to analyze the etching pattern (EP of nine SES in comparison with 35% and 34% phosphoric acid etchants (FA on intact (IN and ground (GR enamel surface. MATERIALS AND METHODS: Twenty-two human third molars were sectioned in mesial-distal and buccal-lingual directions, and four dental fragments were obtained from each tooth. Half of the fragments were ground using 600-grit SiC paper and the other half remained intact. The fragments were randomly assigned into 22 groups, according to the texture of enamel surface (IN and GR and the technique to etch the enamel (34% FA, 35% FA, AdheSE primer; Brush & Bond; Clearfil Protect Bond primer; iBond; One-up Bond F; OptiBond Solo Plus primer; Tyrian SPE primer; Unifil Bond primer and Xeno III. Conditioners were applied to IN and GR enamel surfaces, according to the manufacturer's instructions. Specimens etched with phosphoric acids were washed with water, while the surfaces treated with SES were submitted to alternate rinsing with alcohol and acetone. The specimens were dried, sputter-coated and examined under a scanning electron microscope. RESULTS: For both IN and GR enamel surfaces, the EP of 34 and 35% FA was deeper and more homogeneous in comparison to EP of SES, except for Tyrian SPE. The acidic monomer action of self-etching systems was more effective on GR enamel. CONCLUSION: Most of the SES are less aggressive than phosphoric acid etchants and their etching effects were reduced on intact enamel surfaces.OBJETIVO: Apesar dos sistemas adesivos autocondicionantes (SAA serem indicados para aplicação no esmalte dental, preocupação tem sido relatada com relação a sua efetividade. O objetivo deste estudo foi avaliar o padrão de condicionamento ácido (PCA promovido por nove SAA e comparar ao PCA

  1. Bond strength with various etching times on young permanent teeth

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.N.; Lu, T.C. (School of Dentistry, National Defense Medical Center, Taipei, Taiwan (China))

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  2. Etching patterns on the micro‐ and nanoscale

    DEFF Research Database (Denmark)

    Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik;

    2014-01-01

    Dry etching is widely used for realizing micro‐ and nanostructured devices in various materials. Here, theavailable dry etching techniques and their capabilities at DTU‐Danchip are presented. What sets the dry etching apart from the traditional wet etching in which a chemical agent dissolved in a...

  3. New deep glass etching technology

    OpenAIRE

    Bu, M.; Melvin, T; Ensell, G; J. S. Wilkinson; Evans, A.G.R.

    2003-01-01

    A new masking technology useful for wet etching of glass, to a depth of more than 300 ?m, is reported; multilayers of metal in combination with thick SPRT220 photoresist, are used. This new method was successfully developed for fabricating a 200 ?m thick diaphragm for a micro peristaltic pump. Various mask materials, which can be patterned by standard photolithography and metal etching processes, were investigated. The main advantage of this newly developed method was the application of hydro...

  4. Wetting behaviour of laser synthetic surface microtextures on Ti-6Al-4V for bioapplication.

    Science.gov (United States)

    Dahotre, Narendra B; Paital, Sameer R; Samant, Anoop N; Daniel, Claus

    2010-04-28

    Wettability at the surface of an implant material plays a key role in its success as it modulates the protein adsorption and thereby influences cell attachment and tissue integration at the interface. Hence, surface engineering of implantable materials to enhance wettability to physiological fluid under in vivo conditions is an area of active research. In light of this, in the present work, laser-based optical interference and direct melting techniques were used to develop synthetic microtextures on Ti-6Al-4V alloys, and their effects on wettability were studied systematically. Improved wettability to simulated body fluid and distilled water was observed for Ca-P coatings obtained by direct melting technique. This superior wettability was attributed to both the appropriate surface chemistry and the three-dimensional surface features obtained using this technique. To assert a better control on surface texture and wettability, a three-dimensional thermal model based on COMSOL's multiphysics was employed to predict the features obtained by laser melting technique. The effect of physical texture and wetting on biocompatibility of laser-processed Ca-P coatings was evaluated in the preliminary efforts on culturing of mouse MC3T3-E1 osteoblast cells.

  5. Numerical modelling of microdroplet self-propelled jumping on micro-textured surface

    Science.gov (United States)

    Attarzadeh, S. M. Reza; Dolatabadi, Ali; Chun Kim, Kyung

    2015-11-01

    Understanding various stages of single and multiple droplet impact on a super-hydrophobic surface is of interest for many industrial applications such as aerospace industry. In this study, the phenomenon of coalescence induced droplets self-propelled jumping on a micro-textured super-hydrophobic surface is numerically simulated using Volume of Fluid (VOF) method. This model mimics the scenario of coalescing cloud-sized particles over the surface structure of an aircraft. The VOF coupled with a dynamic contact angle model is used to simulate the coalescence of two equal size droplets, that are initially placed very closed to each other with their interface overlapping with each other's which triggers the incipience of their coalescence. The textured surface is modeled as a series of equally spaced squared pillars, with 111° as the intrinsic contact angle all over the solid contact area. It is shown that the radial velocity of coalescing liquid bridge is reverted to upward direction due to the counter action of the surface to the basal area of droplet in contact. The presence of air beneath the droplet inside micro grooves which aimed at repelling water droplet is also captured in this model. The simulated results are found in good agreement with experimental observations. The authors gratefully acknowledge the financial support from Natural Sciences and Engineering Research Council of Canada (NSERC), Consortium de Recherche et d'innovation en Aerospatiale au Quebec (CRIAQ), Bombardier Aerospace, Pratt Whitney Canada.

  6. Microtextural evolution of different TRC AA8006 alloy sections with homogenization

    Institute of Scientific and Technical Information of China (English)

    Zhong-wei Chen; Long-fei Shen; Jing Zhao

    2015-01-01

    Grain microtexture evolution in twin-roll cast AA8006 alloy sheets subjected to different treatments was investigated using elec-tron backscatter diffraction. The textures of rolling-transverse and normal-transverse sections were characterized in original as-cast twin-roll casting and cold-rolled samples as well as samples homogenized at 500°C for 8 h and at 580°C for 4 h. It is found that grains on both the rolling-transverse and normal-transverse sections of cold-rolled samples are made finer by rolling deformation and coarsened after homog-enization. Annealing temperature has a stronger effect on the microstructural evolution than annealing time. The grain growth direction is parallel to the normal-transverse section, while grain deformation is more stable on the rolling direction than on the normal direction. The rolling orientations display more obvious anisotropy on the normal-transverse sections than on the rolling-transverse sections. Grain recrys-tallization and growth occur much easier on the normal-transverse section than on the rolling-transverse section for samples homogenized at 500°C for 8 h. A special misorientation relationship between cold deformation texture, such as S orientation{123}and cube orienta-tion|Xaxis [cubic], and recrystallization texture after homogenization, such as R orientation{124}and P orientation{011}, is observed.

  7. Effects of TiO2 sandblasted and acid-etched titanium on expression of bone morphogenetic protein 2 in human osteoblasts%TiO2喷砂酸蚀处理对钛片表面人成骨细胞BMP-2表达水平的影响

    Institute of Scientific and Technical Information of China (English)

    陆斌; 李建武; 郭义; 杨艳

    2013-01-01

    目的 探讨钛片经过TiO2喷砂酸蚀处理后对人成骨细胞系MG63细胞骨形态发生蛋白2(bone morphogenetic protein,BMP-2)表达水平的影响.方法 将钛片分为3组进行处理:机械打磨组、喷砂组及喷砂酸蚀组,分别进行机械打磨、TiO2喷砂和喷砂酸蚀处理.将人成骨细胞系MG63细胞接种于钛片表面,采用实时定量聚合酶链反应(real-time polymerase chain reaction,RT-PCR)、Western blot检测BMP-2 mRNA及蛋白表达水平.结果 喷砂组及喷砂酸蚀组BMP-2 mRNA及蛋白水平增高,与机械打磨组相比差异有统计学意义(P<0.05),而喷砂组与喷砂酸蚀组之间差异无统计学意义(P>0.05).结论 使用经过TiO2喷砂及喷砂酸蚀处理的钛片进行人成骨细胞培养可促进BMP-2表达.%Objective To explore the effect of TiO 2 sandblasted and acid -etched titanium on the expression of bone morphogenetic pro -tein 2 (BMP-2) in human MG63 cells.Methods Titanium discs (15 mm diameter and 1 mm thickness ) were divided into 3 groups: machine polished group , sandblasted group , sandblasted and acid -etched group.Titanium discs were treated with mechanical polishing , TiO2 sandblasting, sandblasting and acid-etching in three groups , respectively.MG63 cells were cultured on the titanium.The mRNA and protein expression of BMP-2 in MG63 cells were analyzed by real-time polymerase chain reaction (RT-PCR) and Western blot.Results The mRNA and protein levels of BMP -2 were significantly higher in sandblasted group and sandblasted and acid -etched group than in machine polished group ( P 0.05 ).Conclusion After sandblasting and acid -etching, titanium could promote the expression of BMP-2 in human osteoblast.

  8. Martian surface microtexture from orbital CRISM multi-angular observations: A new perspective for the characterization of the geological processes

    Science.gov (United States)

    Fernando, J.; Schmidt, F.; Douté, S.

    2016-09-01

    The surface of Mars has a high morphological and mineralogical diversity due to the intricacy of external, internal processes, and exchanges with the atmosphere, the hydrosphere and the cryosphere. In particular, liquid water played an important role in surface evolution. However, the origin, duration and intensity of those wet events have been highly debated, especially in the clay-bearing geological units. Similarly, questions still remain about magma crystallization and volatile quantity of the dominant basaltic crust. In this work, six sites having hydrated minerals, salts and basaltic signatures (i.e., Mawrth Vallis, Holden crater, Eberswalde crater, Capri mensa, Eridania basin, Terra Sirenum) are investigated in order to better characterize the geological processes responsible for their formation and evolution (e.g., fluvial, lacustrine, in situ weathering, evaporitic, volcanic and aeolian processes). For that purpose, we use orbital multi-angular measurements from the Compact Reconnaissance Imaging Spectrometer for Mars (CRISM) instrument on-board the Mars Reconnaissance Orbiter spacecraft to analyze the manner in which light is scattered by the surface materials (photometry) in the near-infrared range (at 750 nm). The surface bidirectional reflectance depends on the composition but also on the surface microtexture such as the grain size distribution, morphology, internal structure and surface roughness, tracers of the geological processes. The Hapke semi-analytical model of radiative transfer in granular medium is used to model the surface bidirectional reflectance estimated at 750 nm from the orbital measurements after an atmospheric correction. The model depends on different radiative properties (e.g., single scattering albedo, grain phase function and regolith roughness) related to the surface composition and microtexture. In particular previous laboratory works showed that the particle phase function parameters, which describe the characteristics of the

  9. The influence of the microtexture, corrugation inclination angle, and perforation of corrugated surfaces on the character of liquid spreading

    Science.gov (United States)

    Pavlenko, A. N.; Li, X.; Li, H.; Gao, X.; Volodin, O. A.; Surtaev, A. S.; Serdyukov, V. S.

    2015-08-01

    The spreading of liquid nitrogen film over the surface of single structured packing elements has been experimentally studied. Comparative analysis of experimental data showed the influence of a horizontal microtexture, perforation, and inclination angle of large corrugation ribs on the character of liquid film spreading over the corrugated surface at various values of the film-flow Reynolds number. Experimental data are also presented on the dependence of the relative fraction of liquid retained in a single irrigated channel in corrugated plates of various thicknesses on the extent of irrigation.

  10. Nanostructured porous silicon by laser assisted electrochemical etching

    Science.gov (United States)

    Li, J.; Lu, C.; Hu, X. K.; Yang, Xiujuan; Loboda, A. V.; Lipson, R. H.

    2009-08-01

    Nanostructured porous silicon (pSi) was fabricated by combining electrochemical etching with 355 nm laser processing. pSi prepared in this way proves to be an excellent substrate for desorption/ionization on silicon (DIOS) mass spectrometry (MS). Surfaces prepared by electrochemical etching and laser irradiation exhibit strong quantum confinement as evidenced by the observation of a red shift in the Si Raman band at ~520-500 cm-1. The height of the nanostructured columns produced by electrochemical etching and laser processing is on the order of microns compared with tens of nanometers obtained without laser irradiation. The threshold for laser desorption and ionization of 12 mJ/cm2 using the pSi substrates prepared in this work is lower than that obtained for conventional matrix assisted laser desorption ionization (MALDI)-MS using a standard matrix compound such as [alpha]-cyano-4-hydroxycinnamic acid (CHCA; 30 mJ/cm2). Furthermore, the substrates prepared by etching and laser irradiation appear to resist laser damage better than those prepared by etching alone. These results enhance the capability of pSi for the detection of small molecular weight analytes by DIOS-MS.

  11. 喷砂酸蚀复合MAO纯钛表面对成骨细胞粘附的影响%Effect of sandblast-acid etched titanium surface modified by micro-arc oxidation on osteoblast adhesion

    Institute of Scientific and Technical Information of China (English)

    张佩芬; 何绮芬; 邓飞龙

    2009-01-01

    目的:研究喷砂酸蚀(sandblast-acid etch,SA)复合微弧氧化(micro arc oxidation,MAO)纯钛表面对成骨细胞粘附的影响,探讨SA与MAO复合处理技术在钛种植体表面改性中的价值.材料和方法:将纯钛按表面处理方法的不同分为4组:MAO-SA组为250μm直径Al2O3颗粒喷砂HF酸蚀后MAO处理,MAO组为单纯MAO处理,MAO-HT组为MAO处理后水热处理8h,SM组为光滑组.通过扫描电镜、激光共聚焦显微镜观察、Bradford蛋白定量法、四唑盐比色法和实时荧光定量PCR反应检测分析各表面对蛋白吸附、成骨细胞形态和骨架改建、粘附水平、粘附强度以及整合素表达的影响.数据采用SPSS16.0进行方差分析.结果:MAO-SA表面促进纤连蛋白的后期吸附,有利于成骨细胞粘附和骨架改建,使成骨细胞较早表现出良好的分泌功能形态,增强细胞粘附强度,显著上调成骨细胞整合素αv亚基的mRNA表达水平,但对β1亚基的表达无促进作用.讨论:对纯钛表面进行SA和MAO复合处理,获得独特的表面微形貌,提高粗糙度,从而促进细胞外基质蛋白吸附和成骨细胞粘附.结论:MAO-SA表面显著促进成骨细胞的粘附,具有良好的生物相容性.

  12. Microtextural Characteristics and Origin of Dolomites in the Tepearasi Formation, SW of Beysehir-Konya, Turkey

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The Tepearasi Formation of the autochthonous Geyikdagi Group in the Central Tauride Belt, SE of Beysehir, is Dogger in age and consists dominantly of massive limestones and greyish dolomites occurring within the middle to upper sections. The total thickness of the dolomitic levels ranges from 100–300 m and laterally extends 500–700 m. Three types of dolomite were distinguished through petrographic analyses: homogeneous, mottled (saddle-crystalline) and joint-filling dolomite, which were interpreted to have formed in two different stages, early diagenetic and late diagenetic. The homogeneous dolomite of the early diagenetic stage is light-coloured and monotonous-textured and shows the form of a dolosparite mosaic. The mottled dolomite formed in the late diagenetic stage is light- to dark-coloured and coarsely granular idiomorphic. The other type of late diagenetic dolomite, described as the joint-filling type, presents a crystal growth pattern from the joint walls towards the centre of the joint space. It is associated with coarse calcite crystals as well as primary dolomite crystal clasts which were formed in the early diagenetic stage. In addition to these characteristics, cataclastic texture indicating the influence of tectonism is also observed. Microtexture-oriented scanning electron microscopy (SEM) studies indicate that mottled dolomites show zonal structures and contain secondary dissolution vugs. SEM studies also revealed the existence of some remains (calcite, clay etc.) in joint-filling dolomites. Analyses by energy dispersive spectrometry (EDS) indicate the existence of clay minerals (likely to be illite) in the pores of dolomite. Isotope studies conducted to shed light onto the origin of the dolomites of the Tepearasi Formation yielded the results of ?18O= –2.48 to – 3.87‰ and ?13C=0.93 to 1.12‰ for the early diagenetic homogeneous dolomites. Mottled and joint-filling type dolomites of the late diagenetic stage, on the other hand, gave the

  13. Heavy Minerals in Palaeotsunami Deposits: Assemblages, Spatial Distribution and Microtextural Imprints

    Science.gov (United States)

    Costa, P. J.; Andrade, C.; Cascalho, J.; Dawson, A. G.; Freitas, M. C.; Dawson, S.; Mahaney, W. C.

    2013-12-01

    more likely source areas. In addition, preliminary results of SEM analysis of microtextural features imprinted in the surface of heavy minerals indicate an increase in the number of mechanical marks in the surface of palaeotsunami grains when compared with potential source materials (beach, dune, inshore and offshore samples). This work further reveals the potential to use heavy minerals as a complementary sedimentological tool in the study of palaeotsunami deposits.

  14. Effect of delayed insertion of composite resin on the bond strength of etch-and-rinse adhesive systems

    OpenAIRE

    Edson Alves de CAMPOS; SAAD, José Roberto Cury; Sizenando Toledo PORTO NETO; Campos, Lucas Arrais; de Andrade, Marcelo Ferrarezi

    2009-01-01

    Introduction: Etch-and-rinse adhesive systems are characterized bythe dental acid etching previously to the monomer application. Thesematerials can be classified as 3-step (when primer and bond are applied separately) or 2-step (when the primer and bond functions are carried out by a single component). Objective: To determine the influence of immediate or delayed insertion of restorative material on the values of bond strength of 2-step and 3-step etch-and-rinse adhesive systems using the mic...

  15. Note: Dissolved hydrogen detection in power transformer oil based on chemically etched fiber Bragg grating.

    Science.gov (United States)

    Jiang, Jun; Ma, Guo-ming; Song, Hong-tu; Zhou, Hong-yang; Li, Cheng-rong; Luo, Ying-ting; Wang, Hong-bin

    2015-10-01

    A fiber Bragg grating (FBG) sensor based on chemically etched cladding to detect dissolved hydrogen is proposed and studied in this paper. Low hydrogen concentration tests have been carried out in mixed gases and transformer oil to investigate the repeatability and sensitivity. Moreover, to estimate the influence of etched cladding thickness, a physical model of FBG-based hydrogen sensor is analyzed. Experimental results prove that thin cladding chemically etched by HF acid solution improves the response to hydrogen detection in oil effectively. At last, the sensitivity of FBG sensor chemically etched 16 μm could be as high as 0.060 pm/(μl/l), increased by more than 30% in comparison to un-etched FBG. PMID:26521000

  16. Effect of enamel etching time on roughness and bond strength.

    Science.gov (United States)

    Barkmeier, Wayne W; Erickson, Robert L; Kimmes, Nicole S; Latta, Mark A; Wilwerding, Terry M

    2009-01-01

    The current study examined the effect of different enamel conditioning times on surface roughness and bond strength using an etch-and-rinse system and four self-etch adhesives. Surface roughness (Ra) and composite to enamel shear bond strengths (SBS) were determined following the treatment of flat ground human enamel (4000 grit) with five adhesive systems: (1) Adper Single Bond Plus (SBP), (2) Adper Prompt L-Pop (PLP), (3) Clearfil SE Bond (CSE), (4) Clearfil S3 Bond (CS3) and (5) Xeno IV (X4), using recommended treatment times and an extended treatment time of 60 seconds (n = 10/group). Control groups were also included for Ra (4000 grit surface) and SBS (no enamel treatment and Adper Scotchbond Multi-Purpose Adhesive). For surface roughness measurements, the phosphoric acid conditioner of the SBP etch-and-rinse system was rinsed from the surface with an air-water spray, and the other four self-etch adhesive agents were removed with alternating rinses of water and acetone. A Proscan 2000 non-contact profilometer was used to determine Ra values. Composite (Z100) to enamel bond strengths (24 hours) were determined using Ultradent fixtures and they were debonded with a crosshead speed of 1 mm/minute. The data were analyzed with ANOVA and Fisher's LSD post-hoc test. The etch-and- rinse system (SBP) produced the highest Ra (microm) and SBS (MPa) using both the recommended treatment time (0.352 +/- 0.028 microm and 40.5 +/- 6.1 MPa) and the extended treatment time (0.733 +/- 0.122 microm and 44.2 +/- 8.2 MPa). The Ra and SBS of the etch-and-rinse system were significantly greater (p 0.05). PMID:19363978

  17. Improvement of photocatalytic activity of brookite titanium dioxide nanorods by surface modification using chemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Linjie, E-mail: zhanglinjie138138@yahoo.co.jp [Department of Materials Science, Faculty of Engineering, Kyushu Institute of Technology, 1-1 Sensuicho, Tobata-ku, Kitakyushu 804-8550 (Japan); Menendez-Flores, Victor M.; Murakami, Naoya [Department of Materials Science, Faculty of Engineering, Kyushu Institute of Technology, 1-1 Sensuicho, Tobata-ku, Kitakyushu 804-8550 (Japan); Ohno, Teruhisa, E-mail: tohno@che.kyutech.ac.jp [Department of Materials Science, Faculty of Engineering, Kyushu Institute of Technology, 1-1 Sensuicho, Tobata-ku, Kitakyushu 804-8550 (Japan); JST, PRESTO, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)

    2012-05-15

    Surface morphology of brookite titanium dioxide (TiO{sub 2}) nanorods was modified by chemical etching with aqueous hydrogen (H{sub 2}O{sub 2})-ammonia (NH{sub 3}) or sulfuric acid (H{sub 2}SO{sub 4}) solution. The brookite nanorods after chemical etching were characterized by TEM, SAED, FE-SEM, XRD and specific surface area measurements. Brookite nanorods after chemical etching with H{sub 2}O{sub 2}-NH{sub 3} solution exposed new crystal faces in the tips, and nanorods with sharper tips were observed. On the other hand, etching with H{sub 2}SO{sub 4} at 200 Degree-Sign C induced morphological changes in the tip faces and broadened the angle between tip faces as a result of dissolution along the [0 0 1] direction, though brookite nanorods were only slightly etched after etching with H{sub 2}SO{sub 4} at room temperature. Photocatalytic activity of brookite nanorods was tested by toluene decomposition in gas phase under ultraviolet irradiation. Brookite nanorods etched with H{sub 2}O{sub 2}-NH{sub 3} solution showed higher photocatalytic activity than that of brookite nanorods before etching. In the case of H{sub 2}SO{sub 4} etching at 200 Degree-Sign C, brookite nanorods after etching exhibited lower photocatalytic activity. One reason for this may be that the formation of newly exposed crystal faces by H{sub 2}O{sub 2}-NH{sub 3} etching improved separation of redox sites due to their strong oxidation ability.

  18. Effects of TiO2 sandblast and acid-etched titanium surfaces on mRNA expression of osteoprotegerin and osteoprotegerin ligand in human osteoblast%TiO2喷砂酸蚀处理对人成骨细胞骨保护素和骨保护素配体mRNA表达影响的研究

    Institute of Scientific and Technical Information of China (English)

    陆斌; 李广琪; 李建武; 谢延; 丁宏; 苏杭; 杨艳

    2011-01-01

    [Objective]To investigate the effectiveness of TiO2 sandblasted and acid - etched surfaces of titanium on mRNA expression of osteoprotegerin and osteoprotegerin ligand in human MG63 cells.[Methods]Titanium discs were prepared by machine - polished, sandblasted and acid - etched.MG63 cells were cultured on the titanium surface.The mRNA expressions of OPG and OPGL in MG63 cells were analyzed by real -time PCR.[Results]The level of OPG mRNA was increased in sandblasted group and sandblasted and acid - etched group.There was significant difference ( P < 0.05 ) between the two groups and the machine - polished group.But the levels of OPGL mRNA were not significantly different ( P > 0.05 ) among the three groups.[Conclusion]Sandblasted and acid - etched surfaces of titanium could regulate the balance between osteoblast and osteoclast by promoting the expression of OPG in human osteoblast.%[目的]探讨纯钛钛片经过喷砂及喷砂酸蚀处理后对人成骨细胞系MG63细胞骨保护素(osteoprotegerin,OPG)及骨保护素配体(osteoprotegerin ligand,OPGL)mRNA表达水平的影响.[方法]纯钛钛片表面分别进行机械打磨、喷砂及喷砂酸蚀处理,将人成骨细胞系MG63细胞接种于钛片表面,采用荧光实时定量PCR法检测OPG、OPGL mRNA表达水平.[结果]MG63细胞在经过喷砂及喷砂酸蚀处理后的钛片上培养后其OPG mRNA水平增高,与机械打磨组相比有统计学意义(P<0.05),而OPGL mRNA表达水平在各组之间没有明显差异(P>0.05).[结论]经过喷砂及喷砂酸蚀处理的钛片均可促进人成骨细胞表达OPG,从而调节成骨细胞与破骨细胞之间的平衡,促进骨质重建.

  19. Fabrication of ultra-high aspect ratio silicon nanopores by electrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Torsten; Zhang, Miao; Linnros, Jan, E-mail: linnros@kth.se [Department of Materials and Nano Physics, School of Information and Communication Technology, KTH Royal Institute of Technology, Isafjordsgatan 22, SE-164 40 Kista (Sweden); Yu, Shun [Department of Fibre and Polymer Technology, Polymeric Materials and Wallenberg Wood Science Center, KTH Royal Institute of Technology, SE-100 44 Stockholm (Sweden)

    2014-09-22

    We report on the formation of ultra-high aspect ratio nanopores in silicon bulk material using photo-assisted electrochemical etching. Here, n-type silicon is used as anode in contact with hydrofluoric acid. Based on the local dissolution of surface atoms in pre-defined etching pits, pore growth and pore diameter are, respectively, driven and controlled by the supply of minority charge carriers generated by backside illumination. Thus, arrays with sub-100 nm wide pores were fabricated. Similar to macropore etching, it was found that the pore diameter is proportional to the etching current, i.e., smaller etching currents result in smaller pore diameters. To find the limits under which nanopores with controllable diameter still can be obtained, etching was performed at very low current densities (several μA cm{sup −2}). By local etching, straight nanopores with aspect ratios above 1000 (∼19 μm deep and ∼15 nm pore tip diameter) were achieved. However, inherent to the formation of such narrow pores is a radius of curvature of a few nanometers at the pore tip, which favors electrical breakdown resulting in rough pore wall morphologies. Lowering the applied bias is adequate to reduce spiking pores but in most cases also causes etch stop. Our findings on bulk silicon provide a realistic chance towards sub-10 nm pore arrays on silicon membranes, which are of great interest for molecular filtering and possibly DNA sequencing.

  20. Sistemas adhesivos autograbadores en esmalte: ventajas e inconvenientes Self-etching adhesive systems on enamel: advantages and disadvantages

    Directory of Open Access Journals (Sweden)

    M.A Gomes Moreira

    2004-08-01

    Full Text Available Se mide la resistencia adhesiva de cinco sistemas adhesivos autograbadores y se compara con dos monocomponentes, en esmalte bovino, utilizando cuatro protocolos de aplicación diferentes (según fabricante, con ácido, dos tiempos y dos capas. Asimismo se evalúan con MEB los patrones de grabado ácido de estos sistemas adhesivos, muy heterogéneos en los autograbadores. Todos los sistemas autograbadores presentan valores aceptables de resistencia adhesiva.The bond strength to bovine enamel of five self-etching adhesive systems was measured comparing to two total etch adhesive systems and using different application modes (following manufacturers' instructions, with a previous acid etching, duplicating priming time and doubling the number of adhesives' layers. The etching patterns were analized with scanning electron microscopy showing the self-etching adhesives different aggressiveness. All self-etching systems showed reliable bond strength values.

  1. Time-temperature evolution of microtextures and contained fluids in a plutonic alkali feldspar during heating

    Science.gov (United States)

    Parsons, Ian; Fitz Gerald, John D.; Lee, James K. W.; Ivanic, Tim; Golla-Schindler, Ute

    2010-08-01

    Microtextural changes brought about by heating alkali feldspar crystals from the Shap granite, northern England, at atmospheric pressure, have been studied using transmission and scanning electron microscopy. A typical unheated phenocryst from Shap is composed of about 70 vol% of tweed orthoclase with strain-controlled coherent or semicoherent micro- and crypto-perthitic albite lamellae, with maximum lamellar thicknesses 700°C, and after >48 h at 700°C, all such regions were essentially compositionally homogeneous, as indicated by X-ray analyses at fine scale in the transmission electron microscope. Changes in lamellar thickness with time at different T point to an activation energy of ~350 kJmol-1. A lamella which homogenised after 6,800 h at 600°C, therefore, would have required only 0.6 s to do so in the melting interval at 1,100°C. Subgrains in patch perthite homogenised more slowly than coherent lamellae and chemical gradients in patches persisted for >5,000 h at 700°C. Homogenisation T is in agreement with experimentally determined solvi for coherent ordered intergrowths, when a 50-100°C increase in T for An1 is applied. Homogenisation of lamellae appears to proceed in an unexpected manner: two smooth interfaces, microstructurally sharp, advance from the original interfaces toward the mid-line of each twinned, semicoherent lamella. In places, the homogenisation interfaces have shapes reflecting the local arrangements of nanotunnels or pull-aparts. Analyses confirm that the change in alkali composition is also relatively sharp at these interfaces. Si-Al disordering is far slower than alkali homogenisation so that tweed texture in orthoclase, tartan twinning in irregular microcline, and Albite twins in albite lamellae and patches persisted in all our experiments, including 5,478 h at 700°C, 148 h at 1,000°C and 5 h at 1,100°C, even though the ensemble in each case was chemically homogeneous. Nanotunnels and pull-aparts were modified after only 50 min

  2. Los implantes de titanio con superficie grabada con ácidos: Un seguimiento clínico a 2 años Titanium implants with acid etched surface: A 2-year clinical follow-up

    Directory of Open Access Journals (Sweden)

    E. Velasco Ortega

    2004-12-01

    Full Text Available Introducción. La tecnologia implantológica está mejorando la experiencia clínica de los implantes oseointegrados, con nuevos diseños y composición en su superficie. El estudio muestra la evaluación de los implantes oseointegrados de titanio con superficie grabada con ácidos y carga precoz en pacientes con pérdida dental unitaria, parcial y total. Métodos. 35 pacientes fueron tratados con 100 implantes TSA Defcon®, 53 en la mandibula y 47 en el maxilar superior. Todos los implantes fueron insertados en 1 fase quirúrgica. Los implantes fueron cargados funcionalmente tras un periodo de tiempo de 6 semanas (mandibula y de 8 semanas (maxilar superior. Los hallazgos clínicos (implantológicos y prostodóncicos se han seguido durante 2 años. Resultados. Tras la cicatrización (6-8 semanas, 19pacientes fueron restaurados con coronas unitarias (54,3%,9 pacientes con sobre dentaduras (25,7% y 7 pacientes con puentes fijos (20%, respectivamente. Se observaron complicaciones precoces, durante el periodo de cicatrización libre de carga funcional, en 3 implantes que fueron extraidos por movilidad. Estos resultados indican una supervivencia y éxito de los implantes, de 97%. Conclusiones. Los hallazgos clínicos del presente estudio sugieren que la utilización de los implantes de titanio con superficie grabada al ácido pueden obtener la oseointegración y ser cargados precozmente, representando un procedimiento técnico con éxito en los pacientes con pérdida de dientes.Introduction. Implant technology is improving the clinical experience of osseointegrated implants with new designs and compositions of their surfaceso This study reports the results of evaluation of titanium implants with acid-etched surface and early loading in patients with unitary, partially and fully tooth loss. Methods. 100 TSA Defcon® implants were inserted in 36 patients. 63 implants were placed in the mandible and 47 in the maxilla. All implants were inserted in one

  3. Etching of glass microchips with supercritical water.

    Science.gov (United States)

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-01

    A novel method of etching channels in glass microchips with the most tunable solvent, water, was tested as an alternative to common hydrogen fluoride-containing etchants. The etching properties of water strongly depend on temperature and pressure, especially in the vicinity of the water critical point. The chips were etched at the subcritical, supercritical and critical temperature of water, and the resulting channel shape, width, depth and surface morphology were studied by scanning electron microscopy and 3D laser profilometry. Channels etched with the hot water were compared with the chips etched with standard hydrogen fluoride-containing solution. Depending on the water pressure and temperature, the silicate dissolved from the glass could be re-deposited on the channel surface. This interesting phenomenon is described together with the conditions necessary for its utilization. The results illustrate the versatility of pure water as a glass etching and surface morphing agent.

  4. Selective etching of silicon carbide films

    Science.gov (United States)

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  5. Black Germanium fabricated by reactive ion etching

    Science.gov (United States)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to structure in optoelectronics and IR optics.

  6. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  7. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  8. Micro-textures in plagioclase from 1994e1995 eruption, Barren Island Volcano:Evidence of dynamic magma plumbing system in the Andaman subduction zone

    Institute of Scientific and Technical Information of China (English)

    M.L. Renjith

    2014-01-01

    A systematic account of micro-textures and a few compositional profiles of plagioclase from high-alumina basaltic aa lava erupted during the year 1994e1995, from Barren Island Volcano, NE India ocean, are presented for the first time. The identified micro-textures can be grouped into two categories:(i) Growth related textures in the form of coarse/fine-sieve morphology, fine-scale oscillatory zoning and resorption surfaces resulted when the equilibrium at the crystal-melt interface was fluctuated due to change in temperature or H2O or pressure or composition of the crystallizing melt;and (ii) morphological texture, like glomerocryst, synneusis, swallow-tailed crystal, microlite and broken crystals, formed by the influence of dynamic behavior of the crystallizing magma (convection, turbulence, degassing, etc.). Each micro-texture has developed in a specific magmatic environment, accordingly, a first order magma plumbing model and crystallization dynamics are envisaged for the studied lava unit. Magma generated has undergone extensive fractional crystallization of An-rich plagioclase in stable magmatic environment at a deeper depth. Subsequently they ascend to a shallow chamber where the newly brought crystals and pre-existing crystals have undergone dynamic crystallization via dissolution-regrowth processes in a convective self-mixing environment. Such repeated recharge-recycling processes have produced various populations of plagioclase with different micro-textural stratigraphy in the studied lava unit. Intermittent degassing and eruption related decompression have also played a major role in the final stage of crystallization dynamics.

  9. SAXS study on the morphology of etched and un-etched ion tracks in apatite

    Directory of Open Access Journals (Sweden)

    Nadzri A.

    2015-01-01

    Full Text Available Natural apatite samples were irradiated with 185 MeV Au and 2.3 GeV Bi ions to simulate fission tracks. The resulting track morphology was investigated using synchrotron small angle x-ray scattering (SAXS measurements before and after chemical etching. We present preliminary results from the SAXS measurement showing the etching process is highly anisotropic yielding faceted etch pits with a 6-fold symmetry. The measurements are a first step in gaining new insights into the correlation between etched and unetched fission tracks and the use of SAXS as a tool for studying etched tracks.

  10. Simulation of Etching Profiles Using Level Sets

    Science.gov (United States)

    Hwang, Helen; Govindan, T. R.; Meyyappan, M.; Arnold, James O. (Technical Monitor)

    1998-01-01

    Using plasma discharges to etch trenches and via holes in substrates is an important process in semiconductor manufacturing. Ion enhanced etching involves both neutral fluxes, which are isotropic, and ion fluxes, which are anisotropic. The angular distributions for the ions determines the degree of vertical etch, while the amount of the neutral fluxes determines the etch rate. We have developed a 2D profile evolution simulation which uses level set methods to model the plasma-substrate interface. Using level sets instead of traditional string models avoids the use of complicated delooping algorithms. The simulation calculates the etch rate based on the fluxes and distribution functions of both ions and neutrals. We will present etching profiles of Si substrates in low pressure (10s mTorr) Ar/Cl2 discharges for a variety of incident ion angular distributions. Both ion and neutral re-emission fluxes are included in the calculation of the etch rate, and their contributions to the total etch profile will be demonstrated. In addition, we will show RIE lag effects as a function of different trench aspect ratios. (For sample profiles, please see http://www.ipt.arc.nasa.gov/hwangfig1.html)

  11. Note: electrochemical etching of sharp iridium tips.

    Science.gov (United States)

    Lalanne, Jean-Benoît; Paul, William; Oliver, David; Grütter, Peter H

    2011-11-01

    We describe an etching procedure for the production of sharp iridium tips with apex radii of 15-70 nm, as determined by scanning electron microscopy, field ion microscopy, and field emission measurements. A coarse electrochemical etch followed by zone electropolishing is performed in a relatively harmless calcium chloride solution with high success rate.

  12. 氢氟酸处理时间对可切削玻璃陶瓷粘接后断裂强度的影响%The influence of hydrofluoric acid etching time on fracture strength of cemented machinable glass ceramic

    Institute of Scientific and Technical Information of China (English)

    黄宏; 张鹏; 黎日照

    2015-01-01

    目的:研究氢氟酸凝胶处理时间对可切削玻璃陶瓷粘接后断裂强度的影响。方法收集人离体磨牙50颗,垂直牙长轴磨除牙合面釉质;将CEREC Blocs可切削玻璃陶瓷瓷块加工成片状试件后,随机分成5组,每组10片,用质量分数9.5%的氢氟酸凝胶进行处理,处理时间分别为30 s( B组)、60 s( C组)、120 s( D组)、240 s ( E组),A组为对照组,不用氢氟酸凝胶处理;用Variolink® N粘接系统将处理后的瓷片与离体牙进行粘接,万能试验机上测试瓷片的断裂载荷,对数据进行单因素方差分析和LSD检验。结果 A组、B组、C组、D组、E组试件断裂载荷值分别为(1774±153) N、(2190±180) N、(2336±173) N、(2097±174) N、(2075±202) N。5组试件断裂载荷均数间的差异有统计学意义(F=13.5,P<0.001)。 LSD检验结果显示A组断裂载荷值均小于其余各组,差异均有统计学意义(P<0.05);C组载荷值大于D、E组,差异有统计学意义(P<0.05)。结论氢氟酸处理可提高试件粘接后的断裂强度,处理时间超过120 s后断裂强度下降,但仍高于不作氢氟酸处理组。%Objective To evaluate the fracture strength of cemented machinable glass ceramic after being etched with hydrofluoric acid for different time periods and provide guides for clinical hydrofluoric etching. Methods 50 human mo-lars were collected, and occlusal enamel was removed. Sirona CEREC Blocs were processed into plate-shape, divided in-to 5 groups and etched with hydrofluoric acid for 30 s ( Group B) , 60 s ( Group C) , 120 s ( Group D) and 240 s ( Group E) respectively, while Group A remained untreated. Then all specimens were cemented onto the collected molars with Variolink® N cement system. Fracture loads were measured with a universal testing machine. The results were analyzed by one-way ANOVA and LSD test. Results Fracture loads of Group A to E were ( 1 774 ± 153) N, ( 2 190 ± 180) N, ( 2 336 ± 173) N, ( 2 097 ± 174) N, ( 2

  13. Etching Behavior of Aluminum Alloy Extrusions

    Science.gov (United States)

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  14. Mechanisms of Hydrocarbon Based Polymer Etch

    Science.gov (United States)

    Lane, Barton; Ventzek, Peter; Matsukuma, Masaaki; Suzuki, Ayuta; Koshiishi, Akira

    2015-09-01

    Dry etch of hydrocarbon based polymers is important for semiconductor device manufacturing. The etch mechanisms for oxygen rich plasma etch of hydrocarbon based polymers has been studied but the mechanism for lean chemistries has received little attention. We report on an experimental and analytic study of the mechanism for etching of a hydrocarbon based polymer using an Ar/O2 chemistry in a single frequency 13.56 MHz test bed. The experimental study employs an analysis of transients from sequential oxidation and Ar sputtering steps using OES and surface analytics to constrain conceptual models for the etch mechanism. The conceptual model is consistent with observations from MD studies and surface analysis performed by Vegh et al. and Oehrlein et al. and other similar studies. Parameters of the model are fit using published data and the experimentally observed time scales.

  15. Graphene nanoribbons: Relevance of etching process

    Energy Technology Data Exchange (ETDEWEB)

    Simonet, P., E-mail: psimonet@phys.ethz.ch; Bischoff, D.; Moser, A.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zurich, Zurich 8093 (Switzerland)

    2015-05-14

    Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused by more or larger localized states at the edges of the ashed device compared to the RIE defined device.

  16. Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation

    Energy Technology Data Exchange (ETDEWEB)

    Aureau, D., E-mail: damien.aureau@chimie.uvsq.fr [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France); Chaghi, R.; Gerard, I. [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France); Sik, H.; Fleury, J. [Sagem Defense Sécurité, 72-74, rue de la tour Billy, 95101, Argenteuil Cedex (France); Etcheberry, A. [Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis, Versailles, 78035 (France)

    2013-07-01

    This paper investigates the wet etching of InSb surfaces by two different oxidant agents: Br{sub 2} and H{sub 2}O{sub 2} and the consecutive oxides generation onto the surfaces. The strong dependence between the chemical composition of the etching baths and the nature of the final surface chemistry of this low band-gap III–V semiconductor will be especially highlighted. One aqueous etching solution combined hydrobromic acid and Bromine (HBr–Br{sub 2}:H{sub 2}O) with adjusted concentrations. The other solution combines orthophosphoric and citric acids with hydrogen peroxide (H{sub 3}PO{sub 4}–H{sub 2}O{sub 2}:H{sub 2}O). Depending on its composition, each formulation gave rise to variable etching rate. The dosage of Indium traces in the etching solution by atomic absorption spectroscopy (AAS) gives the kinetic variation of the dissolution process. The variations on etching rates are associated to the properties and the nature of the formed oxides on InSb surfaces. Surface characterization is specifically performed by X-ray photoelectron spectroscopy (XPS). A clear evidence of the differences between the formed oxides is highlighted. Atomic force microscopy is used to monitor the surface morphology and pointed out that very different final morphologies can be reached. This paper presents new results on the strong variability of the InSb oxides in relation with the InSb reactivity toward environment interaction.

  17. Optimal conditions for the preparation of superhydrophobic surfaces on al substrates using a simple etching approach

    Science.gov (United States)

    Ruan, Min; Li, Wen; Wang, Baoshan; Luo, Qiang; Ma, Fumin; Yu, Zhanlong

    2012-07-01

    Many methods have been proposed to develop the fabrication techniques for superhydrophobic surfaces. However, such techniques are still at their infant stage and suffer many shortcomings. In this paper, the superhydrophobic surfaces on an Al substrate were prepared by a simple etching method. Effects of etching time, modifiers, and modification concentration and time were investigated, and optimal conditions for the best superhydrophobicity were studied. It was demonstrated that for etching the aluminum plate in Beck's dislocation, if the etching time was 15 s, modifier was Lauric acid-ethanol solution, and modification concentration and time was 5% and 1.5 h, respectively, the surface exhibited a water contact angle as high as 167.5° and a contact angle hysteresis as low as 2.3°.

  18. Effect of hydrofluoric acid etching time on the topography and surface roughness of lithium disilicate glass ceramic%氢氟酸处理对二硅酸锂玻璃陶瓷表面形貌及粗糙度的影响

    Institute of Scientific and Technical Information of China (English)

    任冬锋; 骆小平

    2013-01-01

    目的 探讨氢氟酸处理时间对二硅酸锂玻璃陶瓷表面形貌及粗糙度的影响,拟为与之相关的玻璃陶瓷机械强度和树脂粘接强度做出初步解释.方法 采用失蜡铸造法制作直径10 mm、厚1 mm的玻璃陶瓷片状试件15个,打磨抛光之后随机分为5组,每组3个.陶瓷表面分别接受9.5%的氢氟酸凝胶酸蚀处理0、20、40、60和120 s.使用原子力显微镜(AFM)测量表面粗糙度参数和酸蚀深度,观测其表面三维形貌,并结合使用场发射扫描电子显微镜(FE-SEM)对陶瓷表面微观结构进行观察分析.结果 FE-SEM观察显示,陶瓷表面的玻璃基质首先被氢氟酸侵蚀溶解,随着酸蚀时间的延长,玻璃基质进一步被侵蚀,部分晶体结构也从陶瓷表面脱落、消失.AFM测量酸蚀表面得出,对照组、20、40、60和120 s氢氟酸处理组陶瓷片表面粗糙度Ra[分别为(17.2±1.6)、(241.8±23.6)、(290.6±38.2)、(322.6±19.6)和(371.3 ± 43.0) nm]随氢氟酸酸蚀时间的延长而显著增加(P<0.05),且与酸蚀时间成正相关.结论 氢氟酸处理可显著增加二硅酸锂陶瓷表面粗糙度.结合使用FE-SEM和AFM能够更好地对玻璃陶瓷的酸蚀表面微观形貌结构进行分析评价.%Objective To analyze the effect of hydrofluoric acid (HFA) etching time on the surface roughness and the topography of lithium disilicate glass ceramic.Methods Fifteen glass ceramic disks (10 mm in diameter and 1 mm in thickness) were made from IPS e.max(R) Press ingots by lost-wax,hot-pressed ceramic fabrication technology,and then divided randomly into five groups (three per group) after polishing.The ceramic surfaces of different groups were etched by 9.5% hydrofluoric acid gel for 0,20,40,60,and 120 s,respectively.Atomic force microscope (AFM) was used to evaluate the surface roughness and the 3D topography.Microstructure was also analyzed by the field emission scanning electron microscope (FE-SEM).Results The result showed

  19. Effect of surface etching on condensing heat transfer

    Energy Technology Data Exchange (ETDEWEB)

    Seok, Sung Chul; Park, Jae Won; Jung, Jiyeon; Choi, Chonggun; Choi, Gyu Hong; Hwang, Seung Sik; Chung, Tae Yong; Shin, Donghoon [Kookmin University, Seoul (Korea, Republic of); Kim, Jin Jun [Hoseo University, Asan (Korea, Republic of)

    2016-02-15

    This study conducted experiments on humid air condensation during heat transfer in an air preheating exchanger attached to a home condensing boiler to improve thermal efficiency. An etchant composed of sulfuric acid and sodium nitrate was used to create roughness on the heat exchanger surface made from STS430J1L. A counter flow heat exchanger was fabricated to test the performance of heat transfer. Results showed that the overall heat transfer coefficients of all specimens treated with etchant improved with respect to the original specimens (not treated with etchant), and the overall heat transfer coefficient of the 60 s etching specimen increased by up to 15%. However, the increasing rate of the heat transfer coefficient was disproportional to the etching time. When the etching time specifically increased above 60 s, the heat transfer coefficient decreased. This effect was assumed to be caused by surface characteristics such as contact angle. Furthermore, a smaller contact angle or higher hydrophilicity leads to higher heat transfer coefficient.

  20. Numerical and analytical study of the impinging and bouncing phenomena of droplets on superhydrophobic surfaces with microtextured structures.

    Science.gov (United States)

    Quan, Yunyun; Zhang, Li-Zhi

    2014-10-01

    The dynamics of droplets impinging on different microtextured superhydrophobic surfaces are modeled with CFD combined with VOF (Volume of Fluid) technique. The method is validated by experimental data and an analytical model (AM) that is used to predict the penetrating depth and the maximum spreading diameter of an impinging droplet. The effects of geometrical shapes and operating conditions on the spreading and bouncing behaviors of impinging droplets are investigated. Six surfaces with different shapes of pillars are considered, namely, triangular prism, square pillar, pentagonal prism, cylindrical pillar, and crisscross pillar surfaces. The bouncing ability of an impinging droplet on textured surfaces can be illustrated from three aspects, namely, the contact time, the ranges of velocities for rebound and the penetrating depth of liquid in the maximum spreading stage. The surface with crisscross pillars exhibits the best ability to rebound, which can be attributed to its large capillary pressure (PC) and its special structures that can capture air in the gaps during the impinging process. PMID:25203603

  1. Effects of etching and adhesive applications on the bond strength between composite resin and glass-ionomer cements

    Directory of Open Access Journals (Sweden)

    Tijen Pamir

    2012-12-01

    Full Text Available OBJECTIVE: This study determined the effects of various surface treatment modalities on the bond strength of composite resins to glass-ionomer cements. MATERIAL AND METHODS: Conventional (KetacTM Molar Quick ApplicapTM or resin-modified (PhotacTM Fil Quick AplicapTM glass-ionomer cements were prepared. Two-step etch-rinse & bond adhesive (AdperTM Single Bond 2 or single-step self-etching adhesive (AdperTM PromptTM L-PopTM was applied to the set cements. In the etch-rinse & bond group, the sample surfaces were pre-treated as follows: (1 no etching, (2 15 s of etching with 35% phosphoric acid, (3 30 s of etching, and (4 60 s of etching. Following the placement of the composite resin (FiltekTM Z250, the bond strength was measured in a universal testing machine and the data obtained were analyzed with the two-way analysis of variance (ANOVA followed by the Tukey's HSD post hoc analysis (p=0.05. Then, the fractured surfaces were examined by scanning electron microscopy. RESULTS: The bond strength of the composite resin to the conventional glass-ionomer cement was significantly lower than that to the resin-modified glass-ionomer cement (p0.05. However, a greater bond strength was obtained with 30 s of phosphoric acid application. CONCLUSIONS: The resin-modified glass-ionomer cement improved the bond strength of the composite resin to the glass-ionomer cement. Both etch-rinse & bond and self-etching adhesives may be used effectively in the lamination of glass-ionomer cements. However, an etching time of at least 30 s appears to be optimal.

  2. Investigation of defects and surface polarity in GaN using hot wet etching together with microscopy and diffraction techniques

    Energy Technology Data Exchange (ETDEWEB)

    Visconti, P.; Huang, D.; Reshchikov, M.A.; Yun, F.; Cingolani, R.; Smith, D.J.; Jasinski, J.; Swider, W.; Liliental-Weber, Z.; Morkoc, H.

    2002-04-08

    The availability of reliable and quick methods to determine defect density and polarity in GaN films is of great interest. We have used photo-electrochemical (PEC) and hot wet etching using H{sub 3}PO{sub 4} and molten KOH to estimate the defect density in GaN films grown by hydride vapor phase epitaxy (HVPE) and molecular beam epitaxy (MBE). Free-standing whiskers and hexagonal etch pits are formed by PEC and wet etching respectively. Using Atomic Force Microscopy (AFM), we found the whisker density to be similar to etch pit densities for samples etched under precise conditions. Additionally Transmission Electron Microscopy (TEM) observations confirmed dislocation densities obtained by etching which increased our confidence in the consistency of methods used. Hot wet etching was used also to investigate the polarity of GaN films together with Convergent Beam Electron Diffraction (CBED) and AFM imaging. We found that hot H{sub 3}PO{sub 4} etches N-polarity GaN films very quickly resulting in the complete removal or drastic change of surface morphology as revealed by AFM or optical microscopy. On the contrary, the acid attacks only defect sites in Ga-polarity films producing nanometer-scale pits but leaving the defect-free GaN intact and the morphology unchanged. Additionally, the polarity assignments were related to the as-grown morphology and to the growth conditions of the buffer layer and the subsequent GaN layer.

  3. Advanced dry etching studies for micro- and nano-systems

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted

    Dry etching is a collective term used for controlled material removal by means of plasma generated ions. Dry etching includes several techniques, with reactive ion etching as one of the most used of its many derivatives. In this work inductively coupled plasma reactive ion etching has been applie...

  4. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  5. Improved thrombogenicity on oxygen etched Ti6Al4V surfaces

    International Nuclear Information System (INIS)

    Thrombus formation on blood contacting biomaterials continues to be a key factor in initiating a critical mode of failure in implantable devices, requiring immediate attention. In the interest of evaluating a solution for one of the most widely used biomaterials, titanium and its alloys, this study focuses on the use of a novel surface oxidation treatment to improve the blood compatibility. This study examines the possibility of using oblique angle ion etching to produce a high quality oxide layer that enhances blood compatibility on medical grade titanium alloy Ti6Al4V. An X-ray photoelectron spectroscopy (XPS) analysis of these oxygen-rich surfaces confirmed the presence of TiO2 peaks and also indicated increased surface oxidation as well as a reduction in surface defects. After 2 h of contact with whole human plasma, the oxygen etched substrates demonstrated a reduction in both platelet adhesion and activation as compared to bare titanium substrates. The whole blood clotting behavior was evaluated for up to 45 min, showing a significant decrease in clot formation on oxygen etched substrates. Finally, a bicinchoninic acid (BCA) total protein assay and XPS were used to evaluate the degree of key blood serum protein (fibrinogen, albumin, immunoglobulin G) adsorption on the substrates. The results showed similar protein levels for both the oxygen etched and control substrates. These results indicate that oblique angle oxygen etching may be a promising method to increase the thrombogenicity of Ti6Al4V. - Highlights: ►Oblique angle oxygen ion etching creates a high quality, uniform oxide surface. ►Oxygen etched substrates showed fewer adhered platelets. ►Platelet activation was reduced by the improved oxide surface. ►Oxygen etched substrates exhibited increased whole blood clotting times. ►Although clotting reductions were seen, protein adsorption remained similar.

  6. Improved thrombogenicity on oxygen etched Ti6Al4V surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Riedel, Nicholas A. [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Smith, Barbara S. [School of Biomedical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Williams, John D. [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); Popat, Ketul C., E-mail: ketul.popat@colostate.edu [Department of Mechanical Engineering, Colorado State University, Fort Collins, CO 80523 (United States); School of Biomedical Engineering, Colorado State University, Fort Collins, CO 80523 (United States)

    2012-07-01

    Thrombus formation on blood contacting biomaterials continues to be a key factor in initiating a critical mode of failure in implantable devices, requiring immediate attention. In the interest of evaluating a solution for one of the most widely used biomaterials, titanium and its alloys, this study focuses on the use of a novel surface oxidation treatment to improve the blood compatibility. This study examines the possibility of using oblique angle ion etching to produce a high quality oxide layer that enhances blood compatibility on medical grade titanium alloy Ti6Al4V. An X-ray photoelectron spectroscopy (XPS) analysis of these oxygen-rich surfaces confirmed the presence of TiO{sub 2} peaks and also indicated increased surface oxidation as well as a reduction in surface defects. After 2 h of contact with whole human plasma, the oxygen etched substrates demonstrated a reduction in both platelet adhesion and activation as compared to bare titanium substrates. The whole blood clotting behavior was evaluated for up to 45 min, showing a significant decrease in clot formation on oxygen etched substrates. Finally, a bicinchoninic acid (BCA) total protein assay and XPS were used to evaluate the degree of key blood serum protein (fibrinogen, albumin, immunoglobulin G) adsorption on the substrates. The results showed similar protein levels for both the oxygen etched and control substrates. These results indicate that oblique angle oxygen etching may be a promising method to increase the thrombogenicity of Ti6Al4V. - Highlights: Black-Right-Pointing-Pointer Oblique angle oxygen ion etching creates a high quality, uniform oxide surface. Black-Right-Pointing-Pointer Oxygen etched substrates showed fewer adhered platelets. Black-Right-Pointing-Pointer Platelet activation was reduced by the improved oxide surface. Black-Right-Pointing-Pointer Oxygen etched substrates exhibited increased whole blood clotting times. Black-Right-Pointing-Pointer Although clotting reductions were

  7. Development of Localized Plasma Etching System for Failure Analyses in Semiconductor Devices: (3)Etching-Monitoring Using Quadrupole Mass Spectrometry

    Science.gov (United States)

    Takahashi, Satoshi; Horie, Tomoyuki; Shirayama, Yuya; Yokosuka, Shuntaro; Kashimura, Kenta; Hayashi, Akihiro; Iwase, Chikatsu; Shimbori, Shun'ichiro; Tokumoto, Hiroshi; Naitoh, Yasuhisa; Shimizu, Tetsuo

    Quadrupole mass spectrometry (QMS) has been applied to monitor the etching processes in a localized plasma etching system. An inward plasma was employed for etching in which the etching gas was discharged in the narrow gap between the etched sample and the entrance of an evacuating capillary tube. As the etching products are immediately evacuated through the capillary, a QMS system equipped at the capillary exit is able to analyze the products without any loss in concentration via diffusion into the chamber. Two kinds of samples, thermally grown SiO2 on Si and spin-coated polyimide film on Si, were etched, and the chemical species in the evacuated etching gas were analyzed with QMS, which enables monitoring of the composition of the surface being etched. Samples of thermal SiO2 were etched with CF4 plasma. The peak height of the SiF3+ signal during the SiO2 etching was lower than that observed during etching of the silicon substrate, leading to endpoint detection. The endpoint detection of the polyimide film etching was conducted using two etching gases: pure O2 and pure CF4. When O2 was used, the endpoint was detected by the decrease of the mass peak attributed to CO. When CF4 was employed, the plasma was able to etch both the polyimide film and Si substrate. Then the endpoint was detected by the increase of the mass peak of SiF3+ produced by the etching of the Si substrate.

  8. Peculiarities of latent track etching in SiO2/Si structures irradiated with Ar, Kr and Xe ions

    Science.gov (United States)

    Al'zhanova, A.; Dauletbekova, A.; Komarov, F.; Vlasukova, L.; Yuvchenko, V.; Akilbekov, A.; Zdorovets, M.

    2016-05-01

    The process of latent track etching in SiO2/Si structures irradiated with 40Ar (38 MeV), 84Kr (59 MeV) and 132Xe (133 and 200 MeV) ions has been investigated. The experimental results of SiO2 etching in a hydrofluoric acid solution have been compared with the results of computer simulation based on the thermal spike model. It has been confirmed that the formation of a molten region along the swift ion trajectory with minimum radius of 3 nm can serve as a theoretical criterion for the reproducible latent track etching tracks in SiO2.

  9. Plasma etching of chromium films in the fabrication of photomasks

    Science.gov (United States)

    Coleman, Thomas P.; Buck, Peter D.

    1995-12-01

    To meet the advanced CD uniformity and resolution requirements of state-of-the-art maskmaking, dry chrome etch processing may be required. Dry etching is a more anisotropic process, significantly reducing etch undercut. The absence of undercutting allows the lithographer to image the resist at the iso-focal point, eliminating the need to underexpose to maintain CDs. Also, dry etch parameters can be precisely controlled via a microprocessor- controlled etch system with a highly accurate parameter-metering system that ensures greater process control. Using design-of-experiment methodologies, a chrome plasma etch process (using OCG-895i) was developed. This work proves the feasibility of plasma etching chromium patterns on photomasks. The results show an etch that has excellent uniformity, is anisotropic, and has excellent edge quality. Also, resist selectivity is high for the etching of thin chrome films. SEM results show a significant reduction in the bias needed to achieve nominal CDs. As with many dry etch processes, loading and microloading effects (i.e., localized pattern density effect on etch rates) are a concern. Initial investigations of loading and microloading effects were conducted. Results suggest that due to the high anisotropy of the etch, microloading is not an issue. However, plate loading (or the amount of chrome removed) increases etch times and can result in radial etch patterns. Loading effects must be minimized or eliminated to optimize etch uniformity.

  10. Effect of helium ion beam treatment on the etching rate of silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Petrov, Yu.V., E-mail: y.petrov@spbu.ru; Sharov, T.V.; Baraban, A.P.; Vyvenko, O.F.

    2015-04-15

    We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. 30 keV helium ions were implanted into a 500-nm-thick silicon nitride film on silicon. Ion fluences from 10{sup 15} to 10{sup 17} cm{sup −2} were used. Etching was performed in a hydrofluoric acid solution. All samples were investigated with a scanning electron microscope and atomic force microscope. It was found that helium ion implantation can increase the etching rate by a factor of three. This results in the formation of a well in the implanted area after etching. The maximum depth of the well is about 180 nm and is limited by the penetration depth of 30 keV helium ions. Two possible reasons for enhanced etching are suggested: enhancement by ion-induced defects and electrostatic interaction of ions of the etchant with ion-induced space charge of silicon nitride. The recombination of ion-induced defects is also discussed.

  11. Effect of helium ion beam treatment on the etching rate of silicon nitride

    International Nuclear Information System (INIS)

    We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. 30 keV helium ions were implanted into a 500-nm-thick silicon nitride film on silicon. Ion fluences from 1015 to 1017 cm−2 were used. Etching was performed in a hydrofluoric acid solution. All samples were investigated with a scanning electron microscope and atomic force microscope. It was found that helium ion implantation can increase the etching rate by a factor of three. This results in the formation of a well in the implanted area after etching. The maximum depth of the well is about 180 nm and is limited by the penetration depth of 30 keV helium ions. Two possible reasons for enhanced etching are suggested: enhancement by ion-induced defects and electrostatic interaction of ions of the etchant with ion-induced space charge of silicon nitride. The recombination of ion-induced defects is also discussed

  12. Effect of pre-etching enamel on fatigue of self-etch adhesive bonds

    NARCIS (Netherlands)

    R.L. Erickson; A.J. de Gee; A.J. Feilzer

    2008-01-01

    Objective. A previous study found that the shear bond strength (SBS) to bovine enamel for the self-etching adhesive Adper Prompt-L-Pop (PLP) was 75% of that found with the etch-and-rinse material SingleBond, while the comparative value for the shear fatigue limit (SFL) was only 58% at 10(5) load cyc

  13. 柠檬酸对腐蚀铝箔高压阳极氧化膜微观结构与电化学性能的影响%Effect of citric acid on microstructure and electrochemical characteristics of high voltage anodized alumina film formed on etched Al Foils

    Institute of Scientific and Technical Information of China (English)

    班朝磊; 何业东; 邵鑫

    2011-01-01

    将高压铝电解电容器用腐蚀铝箔与沸水反应,然后再在硼酸溶液或硼酸-柠檬酸混合酸溶液中进行530 V高压阳极氧化制得耐压薄膜,应用透射电镜(TEM)、X射线衍射(XRD)研究不同电解液所形成的高压阳极氧化膜的微观结构与结晶程度,利用电化学交流阻抗(EIS)、LCR数字电桥与小电流充电测试阳极氧化膜的电化学性能.结果表明:高压阳极氧化膜具有明显层状结构,内层结晶程度较高、外层结晶程度较低;与单纯硼酸溶液所形成的氧化膜相比,混合酸液所形成的阳极氧化膜的外层结晶程度与晶粒平均尺寸较大,抗电场强度与比电容均比较高,但相变使得氧化膜外层微观缺陷密度增多,氧化膜比电阻与耐电压值有所降低.%Aluminum capacitor foils with a tunnel etch structure were reacted with boiling water and then anodized at 530 V in boric acid solution or boric acid+citric acid mixed solution. The microstructure and crystallinity of the resulting anodized film were examined by TEM and XRD. The special capacitance, resistance and withstanding voltage of the film were explored with electrochemical impedance spectroscopy (EIS), LCR meter and small-current charging. The results show that the high voltage anodized oxide film consists of an inner layer with high crystallinity and an outer layer with low crystallinity. However, the crystallinity of the film formed in boric acid+citric acid mixed solution is higher than that of the film formed in only boric acid solution, leading to an increase in film's field strength and special capacitance. Meanwhile, there are more defects from phase transformation in the out layer of the film formed in boric acid+citric acid mixed solution than in that of film formed in only boric acid solution, leading to a decrease in film's resistance and withstanding voltage.

  14. Dry etched SiO2 Mask for HgCdTe Etching Process

    Science.gov (United States)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  15. Facet selective etching of Au microcrystallites

    Institute of Scientific and Technical Information of China (English)

    Gangaiah Mettela and Giridhar U. Kulkarni

    2015-01-01

    High-symmetry crystals exhibit isotropic properties. Inducing anisotropy, e.g., by facet selective etching, is considered implausible in face-centered cubic (FCC) metals, particularly gold, which, in addition to being an FCC, is noble. We report for the first time the facet selective etching of Au microcrystals obtained in the form of cuboctahedra and pentagonal rods from the thermolysis of a gold- organic precursor. The selective etching of {111} and {100} facets was achieved using a capping method in which tetraoctylammonium cations selectively cap the {111} facets while Br- ions protect the {100} facets. The exposed facets are oxidized by O2/C1-, yielding a variety of interesting geometries. The facet selective etching of the Au microcrystallites is governed only by the nature of the facets; the geometry of the microcystallite does not appear to play a significant role. The etched surfaces appear rough, but a closer examination reveals well-defined corrugations that are indexable to high hkl values. Such surfaces exhibit enhanced Raman activity.

  16. Process capability of etched multilayer EUV mask

    Science.gov (United States)

    Takai, Kosuke; Iida nee Sakurai, Noriko; Kamo, Takashi; Morikawa, Yasutaka; Hayashi, Naoya

    2015-10-01

    With shrinking pattern size at 0.33NA EUV lithography systems, mask 3D effects are expected to become stronger, such as horizontal/vertical shadowing, best focus shifts through pitch and pattern shift through focus. Etched multilayer EUV mask structures have been proposed in order to reduce mask 3D effects. It is estimated that etched multilayer type mask is also effective in reducing mask 3D effects at 0.33NA with lithographic simulation, and it is experimentally demonstrated with NXE3300 EUV Lithography system. We obtained cross-sectional TEM image of etched multilayer EUV mask pattern. It is observed that patterned multilayer width differs from pattern physical width. This means that effective reflecting width of etched multilayer pattern is smaller than pattern width measured by CD-SEM. In this work, we evaluate mask durability against both chemical and physical cleaning process to check the feasibility of etched multilayer EUV mask patterning against mask cleaning for 0.33NA EUV extension. As a result, effective width can be controlled by suitable cleaning chemicals because sidewall film works as a passivation film. And line and space pattern collapse is not detected by DUV mask pattern inspection tool after mask physical cleaning that includes both megasonic and binary spray steps with sufficient particle removal efficiency.

  17. Analytical model of plasma-chemical etching in planar reactor

    Science.gov (United States)

    Veselov, D. S.; Bakun, A. D.; Voronov, Yu A.; Kireev, V. Yu; Vasileva, O. V.

    2016-09-01

    The paper discusses an analytical model of plasma-chemical etching in planar diode- type reactor. Analytical expressions of etch rate and etch anisotropy were obtained. It is shown that etch anisotropy increases with increasing the ion current and ion energy. At the same time, etch selectivity of processed material decreases as compared with the mask. Etch rate decreases with the distance from the centre axis of the reactor. To decrease the loading effect, it is necessary to reduce the wafer temperature and pressure in the reactor, as well as increase the gas flow rate through the reactor.

  18. Track Etching of PET Studied by Spectrophotometer

    Institute of Scientific and Technical Information of China (English)

    ZhuZhiyong; DuanJinlai; SunYoumei; Y.Maekawa; H.Koshikawa; M.Yoshida

    2003-01-01

    Energetic heavy ion passing through polymeiic materials can produce a cylindrical intensively damaged area along the ion path, which is referred to as latent ion track. Large amount of small molecule fragments are produced inside ion track through interactions between the ion and the target atoms, which made it easy to be chemically etched compared to the bulk material. Porous membranes with nanometer and micrometer sized pores can therefore be produced through proper etching of the ion irradiated polymer film. As the pores are well aligned with respect to each other and the pore geometric shape can be finely controlled, the so produced ion track membrane has found wide applications.

  19. Laser etching of enamel for direct bonding with an Er,Cr:YSGG hydrokinetic laser system.

    Science.gov (United States)

    Uşümez, Serdar; Orhan, Metin; Uşümez, Aslihan

    2002-12-01

    Irradiation of enamel with laser energy changes the physical and chemical characteristics of the enamel surface, and these alterations hold promise for the conditioning of enamel for bonding procedures. This laboratory study examined the influence of laser irradiation of enamel at 2 different power settings with an erbium, chromium: yttrium, scandium, gallium, garnet (Er,Cr:YSGG) hydrokinetic laser system (Millennium System, Biolase Technology, Inc; San Clemente, Calif) on the shear bond strength of orthodontic appliances and compared these with that of acid-etching. The prepared surfaces of 40 noncarious, intact, extracted premolars were exposed to laser energy: 20 teeth at 2-W setting (5.6 J/cm(2)) and 20 teeth at 1-W setting (2.7 J/cm(2)) of the commercial laser unit. Twenty teeth were etched with 37% orthophosphoric acid. Brackets were bonded with an orthodontic no-mix adhesive, and shear bond strength was determined with a universal testing machine. Data were analyzed with Kruskal-Wallis and Mann-Whitney U tests. Etched and restored surfaces of an acid-etched tooth and a 2-W laser-irradiated tooth were examined with scanning electron microscopy (SEM). Laser treatment under 2 W resulted in bond strengths of 7.11 +/- 4.56 megapascals (MPa), which was not significantly different from that of acid etching (8.23 +/- 2.30 MPa). Laser irradiation at 1 W resulted in bond strengths of 5.64 +/- 3.19 MPa, which was significantly different from that of acid etching (P <.05). However, large SD and coefficient of variation values of both laser groups made reliability of this method as an enamel conditioner questionable. Scanning electron microscopy studies of the restored irradiated surfaces showed good surface characteristics, whereas the lased surface was still more irregular than the restored acid-etched sample. Although laser devices are effectively used in some other areas of dentistry, enamel conditioning with an Er,Cr:YSGG laser cannot be considered a successful

  20. Fabrication of Submicron-Diameter and Taper Fibers Using Chemical Etching

    Institute of Scientific and Technical Information of China (English)

    Hani J.Kbashi

    2012-01-01

    The thin, long length and high smoothness silica photonic nanowires and taper optical fiber were fabricated using a simple and low cost chemical etching method. A two-steps wet etch process were used consisting of etching with 30% HF acid to remove cladding and 24% HF acid to decrease fiber core diameter. An approach for on-line monitoring of etching using 1300 nm light power transmitted in the optical fiber was used to determine the diameter of the remaining core and showed a transition between two different operation regimes of nanofiber from the embedded regime, where the mode was isolated from the environment, to the evanescent regime. The data indicated that the diameter of the silica fiber decreased linearly for both 30% and 24% HF acid with 1.2 and 0.1/zm/min grad diameter, respectively at room temperature, and more than 70% of the mode intensity could propagate outside fiber when the core diameter was less than 1μm. The results of fiber taper showed that the fiber was tapered by a factor of 20 while retaining a thin core structure and leaving about more than 85% of core structure.

  1. Polymer masks for structured surface and plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Vital, Alexane [Centre de Recherche sur la Matière Divisée (CRMD), 1b rue de la Férollerie, F45071 Orléans Cedex (France); Groupe de Recherches sur l’Énergétique des Milieux Ionisés (GREMI), Polytech’Orléans, 14 rue d’Issoudun, B.P. 6744, F45067 Orléans Cedex 2 (France); Vayer, Marylène, E-mail: marylene.vayer@univ-orleans.fr [Centre de Recherche sur la Matière Divisée (CRMD), 1b rue de la Férollerie, F45071 Orléans Cedex (France); Sinturel, Christophe [Centre de Recherche sur la Matière Divisée (CRMD), 1b rue de la Férollerie, F45071 Orléans Cedex (France); Tillocher, Thomas; Lefaucheux, Philippe; Dussart, Rémi [Groupe de Recherches sur l’Énergétique des Milieux Ionisés (GREMI), Polytech’Orléans, 14 rue d’Issoudun, B.P. 6744, F45067 Orléans Cedex 2 (France)

    2015-03-30

    Graphical abstract: - Highlights: • Sub-micrometric silicon structures were prepared by cryogenic plasma etching. • Polymer templates based on phase-separated films of PS/PLA were used. • Silica structured masks were prepared by filling the polymer templates. • Etching of underlying silicon through silica templates gave original structures. - Abstract: Silica and silicon structures have been prepared at the sub-micrometer length-scale, using laterally phase-separated thin films of poly(styrene) (PS) and poly(lactic acid) (PLA) homopolymer blends. The selective removal of one polymer and the filling of the released space by silica precursor solution led, after calcination, to silica structures on silicon such as arrays of bowl-shape features or pillars, layers with through or non-through cylindrical holes, which has not been observed for some of them. The control of the morphology of the initial polymer film was a key point to achieve such type of structures. Particularly relevant was the use of solvent vapor annealing (vs thermal annealing) of the initial spin-coated films that favored and stabilized laterally phase-separated morphologies. Characteristic dimension of the domains were shown to be coupled with the thickness of the film, thinner films giving smaller domain sizes. Despite a relatively high incompatibility of the two polymers, a macro-phase separation was prevented in all the studied conditions. Sub-micrometric domains were formed, and for the thinner films, nanometric domains as small as 74 nm in size can be obtained. The silica structures formed by the infiltration of the polymer templates were used as hard masks for the cryogenic etching of underlying silicon. New structured surfaces, arrays of silicon pillars which can be plain or hollow at the upper part or arrays of cylindrical holes were formed. A selectivity as high as 21 was obtained using this type of mask for 1.5 μm deep holes having a typical diameter of 200 nm.

  2. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    Energy Technology Data Exchange (ETDEWEB)

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  3. Purified water etching of native oxides on heteroepitaxial CdTe thin films

    Science.gov (United States)

    Meinander, Kristoffer; Carvalho, Jessica L.; Miki, Carley; Rideout, Joshua; Jovanovic, Stephen M.; Devenyi, Gabriel A.; Preston, John S.

    2014-12-01

    The etching of native oxides on compound semiconductors is an important step in the production of electronic and optoelectronic devices. Although it is known that the native oxide on CdTe can be etched through a rinsing in purified water, a deeper investigation into this process has not been done. Here we present results on both surface morphology changes and reaction rates for purified water etching of the native oxide on heteroepitaxial CdTe thin films, as studied by atomic force microscopy and x-ray photoelectron spectroscopy. Together with a characterization of both the structure and stoichiometry of the initial native oxide, we show how an altering of the pH-level of the etchant will affect the etching rates. If oxide regrowth was allowed, constant etching rates could be observed for all etchants, while a logarithmic decrease in oxide thickness was observed if regrowth was inhibited. Both acidic and basic etchants proved to be more efficient than neutral water.

  4. Compositional and Microtextural Analysis of Basaltic Feedstock Materials Used for the 2010 ISRU Field Tests, Mauna Kea, Hawaii

    Science.gov (United States)

    Marin, N.; Farmer, J. D.; Zacny, K.; Sellar, R. G.; Nunez, J.

    2011-12-01

    This study seeks to understand variations in composition and texture of basaltic pyroclastic materials used in the 2010 International Lunar Surface Operation-In-Situ Resource Utilization Analogue Test (ILSO-ISRU) held on the slopes of Mauna Kea Volcano, Hawaii (1). The quantity and quality of resources delivered by ISRU depends upon the nature of the materials processed (2). We obtained a one-meter deep auger cuttings sample of a basaltic regolith at the primary site for feed stock materials being mined for the ISRU field test. The auger sample was subdivided into six, ~16 cm depth increments and each interval was sampled and characterized in the field using the Multispectral Microscopic Imager (MMI; 3) and a portable X-ray Diffractometer (Terra, InXitu Instruments, Inc.). Splits from each sampled interval were returned to the lab and analyzed using more definitive methods, including high resolution Powder X-ray Diffraction and Thermal Infrared (TIR) spectroscopy. The mineralogy and microtexture (grain size, sorting, roundness and sphericity) of the auger samples were determined using petrographic point count measurements obtained from grain-mount thin sections. NIH Image J (http://rsb.info.nih.gov/ij/) was applied to digital images of thin sections to document changes in particle size with depth. Results from TIR showed a general predominance of volcanic glass, along with plagioclase, olivine, and clinopyroxene. In addition, thin section and XRPD analyses showed a down core increase in the abundance of hydrated iron oxides (as in situ weathering products). Quantitative point count analyses confirmed the abundance of volcanic glass in samples, but also revealed olivine and pyroxene to be minor components, that decreased in abundance with depth. Furthermore, point count and XRD analyses showed a decrease in magnetite and ilmenite with depth, accompanied by an increase in Fe3+phases, including hematite and ferrihydrite. Image J particle analysis showed that the

  5. Technique for etching monolayer and multilayer materials

    Energy Technology Data Exchange (ETDEWEB)

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  6. Etch Profile Simulation Using Level Set Methods

    Science.gov (United States)

    Hwang, Helen H.; Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

  7. Review of micromachining of ceramics by etching

    Institute of Scientific and Technical Information of China (English)

    H.T.TING; K.A.ABOU-EL-HOSSEIN; H.B.CHUA

    2009-01-01

    In the last two decades, there has been an enormous surge in interest in ceramic materials and, as a result, there have been significant advances in their development and applications. Their inherent properties, such as capability of operating at temperatures far above metals, high level of hardness and toughness, low coefficient of thermal expansion and high thermal conductivity rendered ceramics to be one of the leading engineering materials. Many research works have been conducted in the past few years on machining of advanced ceramics using different processing methods in order to obtain a better surface roughness, higher material removal rate and improved tool life. Micromachining using chemical etching is one of those methods that do not involve the problem of tool life and direct tool-work piece contact. However, only a few research works have been done on micromachining of ceramics using chemical etching. Hence, study of chemical machining of advanced ceramics is still needed as the process has found wide application in the industry because of its relative low operating costs. In this work, we summarize the recent progresses in machining of different types of advanced ceramics, material processing methods such as wet etching and dry etching, and finally the prospects for control of material removal rate and surface quality in the process of ceramic micromachining.

  8. Anodic etching of p-type cubic silicon carbide

    Science.gov (United States)

    Harris, G. L.; Fekade, K.; Wongchotigul, K.

    1992-01-01

    p-Type cubic silicon carbide was anodically etched using an electrolyte of HF:HCl:H2O. The etching depth was determined versus time with a fixed current density of 96.4 mA/sq cm. It was found that the etching was very smooth and very uniform. An etch rate of 22.7 nm/s was obtained in a 1:1:50 HF:HCl:H2O electrolyte.

  9. Generalized Approach for Selecting Plasma Chemistries in Metal Etch

    OpenAIRE

    Chen, Kun-Chieh

    2016-01-01

    In this work, a generalized methodology, combining thermodynamic assessment of various etching chemistries and kinetic verification of etching efficacy, is proposed. To screen various chemistries, reactions between the dominant vapor phase/condensed species at various partial pressures of reactants are first considered. The volatility of etch product is determined to aid the selection of viable etch chemistry. Magnetic tunnel junction (MTJ) based magnetic random access memory (MRAM) was chose...

  10. A randomized control clinical trial of fissure sealant retention: Self etch adhesive versus total etch adhesive

    OpenAIRE

    Nadia Aman; Farhan Raza Khan; Aisha Salim; Huma Farid

    2015-01-01

    Context: There are limited studies on comparison of Total etch (TE) and Self etch (SE) adhesive for placement of sealants. Aims: The aim of the study was to compare the retention of fissure sealants placed using TE adhesive to those sealants placed using SE (seventh generation) adhesive. Settings and Design: The study was conducted in the dental section, Aga Khan University Hospital. This study was a randomized single blinded trial with a split mouth design. Materials and Methods:...

  11. Dopant Selective Reactive Ion Etching of Silicon Carbide

    Science.gov (United States)

    Okojie, Robert (Inventor)

    2016-01-01

    A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

  12. 不同表面酸蚀处理对纤维桩与树脂黏结强度影响的实验研究%Effects of different acid etching methods on the bond strength between fiber post and resin

    Institute of Scientific and Technical Information of China (English)

    李磊; 张兴乐; 苏哲君; 时静华; 马莉; 葛志华

    2011-01-01

    目的:观察不同表面酸蚀处理对纤维桩与树脂黏结强度的影响.方法:直径1.25 mm的玻璃纤维桩24根随机分为4组,用300 mL/L过氧化氢(H)、40g/L氢氟酸(F)、320g/L磷酸(P)和蒸馏水(对照组)对纤维桩进行表面处理,并于表面涂布树脂黏结剂后用树脂水门汀将其黏结于树脂模具中.试件在万能材料试验机上进行推出实验.结果:F组黏结强度均值最高(30.28±2.36) MPa,其次为H组(26.15±1.56)MPa,P组(23.71±3.47) MPa,对照组(C组)最小(22.39±2.48) MPa.单因素方差分析及多重比较显示:F组与H组、P组、C组之间有统计学差异(P<0.05);H组与P组、C组之间有统计学差异(P<0.05);P组与C组之间无统计学差异(p>0.05).结论:用300mL/L过氧化氢、40g/L氢氟酸对纤维桩表面进行处理,可有效提高纤维桩与树脂黏结强度.%ABM: To evaluate the effects of different acid etching on the bond strength between fiber postand resin. METHODS: Twenty-four glass fiber posts were divided into 4 groups and were treated with 30% methyl-ene chloride (H), 4% hydrofluoric acid (F) and 32% phosphoretic acid (P) respectively, and then bonded to resin blocks. Push-out tests were performed in a universal testing machine and the bond strength was evaluated. RESULTS: F group showed the highest mean bond strength (30.28 ±2.36)Mpa, which was significantly higher than H group (26.15±1.56)Mpa, P group (23.71 ±3.47)Mpa and C group (22. 39 ±2.48)Mpa (P0. 05). CONCLUSION; Etching by 4% hydrofluoric acid and 30% methylene chloride can significantly enhances bond strength between glass fiber post and resin.

  13. Comparative evaluation of antibacterial activity of total-etch and self-etch adhesive systems: An ex vitro study

    Directory of Open Access Journals (Sweden)

    Swathi Amin

    2014-01-01

    Full Text Available Aim: The aim of this ex vivo study was to compare the antibacterial activity of total-etch and self-etch adhesive systems against Streptococcus mutans, Lactobacillus acidophilus, and Actinomyces viscosus through disk diffusion method. Materials and Methods: The antibacterial effects of Single Bond (SB and Adper Prompt (AP and aqueous solution of chlorhexidine 0.2% (positive control were tested against standard strain of S. mutans, L. acidophilus, and A. viscosus using the disk diffusion method. The diameters of inhibition zones were measured in millimeters. Data was analyzed using Kruskal-Wallis test. Mann-Whitney U test was used for pairwise comparison. Result: Of all the materials tested, AP showed the maximum inhibitory action against S. mutans and L. acidophilus. Aqueous solution of chlorhexidine 0.2% showed the maximum inhibitory action against A. viscosus. Very minimal antibacterial effect was noted for SB. Conclusion: The antibacterial effects observed for the tested different dentin bonding systems may be related to the acidic nature of the materials.

  14. Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

    NARCIS (Netherlands)

    A.I. Abdalla; A.J. Feilzer

    2008-01-01

    Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid Bond’

  15. Research on wet etching at MEMS torsion mirror optical switch

    Science.gov (United States)

    Zhang, Yi; Wang, Jifeng; Luo, Yuan

    2002-10-01

    Etching is a very important technique at MEMS micromachining. There are two kinds of etching processing, the one is wet etching and the other is dry etching. In this paper, wet selective etching with KOH and tetramethyl ammonium hydroxide (TMAH) etchants is researched in order to make a torsion mirror optical switch. The experiments results show that TMAH with superphosphate is more suitable at MEMS torsion mirror optical switch micromachining than KOH, and it also has good compatibility with IC processing. Also our experiments results show some different with other reported research data. More work will be done to improve the yield rate of MEMS optical switch.

  16. SU-8 etching in inductively coupled oxygen plasma

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming;

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  17. Patterning of platinum (Pt) thin films by chemical wet etching in Aqua Regia

    Science.gov (United States)

    Köllensperger, P. A.; Karl, W. J.; Ahmad, M. M.; Pike, W. T.; Green, M.

    2012-06-01

    The chemical and physical properties of platinum (Pt) make it a useful material for microelectromechanical systems and microfluidic applications such as lab-on-a-chip devices. Platinum thin-films are frequently employed in applications where electrodes with high chemical stability, low electrical resistance or a high melting point are needed. Due to its chemical inertness it is however also one of the most difficult metals to pattern. The gold standard for patterning is chlorine RIE etching, a capital-intensive process not available in all labs. Here we present simple fabrication protocols for wet etching Pt thin-films in hot Aqua Regia based on sputtered Ti/Pt/Cr and Cr/Pt/Cr metal multilayers. Chromium (Cr) or titanium (Ti) is used as an adhesion layer for the Pt. Cr is used as a hard masking layer during the Pt etch as it can be easily and accurately patterned with photoresist and withstands the Aqua Regia. The Cr pattern is transferred into the Pt and the Cr mask later removed. Only standard chemicals and cleanroom equipment/tools are required. Prior to the Aqua Regia etch any surface passivation on the Pt is needs to be removed. This is usually achieved by a quick dip in dilute hydrofluoric acid (HF). HF is usually also used for wet-etching the Ti adhesion layer. We avoid the use of HF for both steps by replacing the HF-dip with an argon (Ar) plasma treatment and etching the Ti layer with a hydrogen peroxide (H2O2) based etchant.

  18. Optical properties of individual etched tracks

    CERN Document Server

    Skvarc, J

    1999-01-01

    Differentiation between etched tracks of different particles or particles of different energy is usually based on track size measurements. In addition, it is possible to take into account the optical properties of the tracks. In the present work the visual appearance of the tracks is calculated by means of track etching simulation and optical ray-tracing of a computer model of the track. From the digital image obtained the optical properties of tracks can be predicted and used for the quantitative description of the incoming particles. Apart from the already known optical track parameter, the average grey level, this work provides the possibility for a theoretical study of other parameters, such as contrast and symmetry.

  19. Metal gate etch-back planarization technology

    Institute of Scientific and Technical Information of China (English)

    Meng Lingkuan; Yin Huaxiang; Chen Dapeng; Ye Tianchun

    2012-01-01

    Planarization used in a gate-last CMOS device was successfully developed by particular technologies of SOG two-step plasma etch-back plus one special etch-back step for SOG/SiO2 interface trimming.The within-thewafer ILD thickness non-uniformity can reach 4.19% with a wafer edge exclusion of 5 mm.SEM results indicated that there was little “dish effect” on the 0.4 μm gate-stack structure and finally achieved a good planarization profile on the whole substrate.The technology provided a CMP-less process basis for sub-100 nm high-k/metal gate-last CMOS integration.

  20. Synthesis and Characterization of Chemically Etched Nanostructured Silicon

    KAUST Repository

    Mughal, Asad Jahangir

    2012-05-01

    Silicon is an essential element in today’s modern world. Nanostructured Si is a more recently studied variant, which has currently garnered much attention. When its spatial dimensions are confined below a certain limit, its optical properties change dramatically. It transforms from an indirect bandgap material that does not absorb or emit light efficiently into one which can emit visible light at room temperatures. Although much work has been conducted in understanding the properties of nanostructured Si, in particular porous Si surfaces, a clear understanding of the origin of photoluminescence has not yet been produced. Typical synthesis approaches used to produce nanostructured Si, in particular porous Si and nanocrystalline Si have involved complex preparations used at high temperatures, pressures, or currents. The purpose of this thesis is to develop an easier synthesis approach to produce nanostructured Si as well as arrive at a clearer understanding of the origin of photoluminescence in these systems. We used a simple chemical etching technique followed by sonication to produce nanostructured Si suspensions. The etching process involved producing pores on the surface of a Si substrate in a solution containing hydrofluoric acid and an oxidant. Nanocrystalline Si as well as nanoscale amorphous porous Si suspensions were successfully synthesized using this process. We probed into the phase, composition, and origin of photoluminescence in these materials, through the use of several characterization techniques. TEM and SEM were used to determine morphology and phase. FT-IR and XPS were employed to study chemical compositions, and steady state and time resolved optical spectroscopy techniques were applied to resolve their photoluminescent properties. Our work has revealed that the type of oxidant utilized during etching had a significant impact on the final product. When using nitric acid as the oxidant, we formed nanocrystalline Si suspensions composed of

  1. Geochemical, microtextural and petrological studies of the Samba prospect in the Zambian Copperbelt basement: a metamorphosed Palaeoproterozoic porphyry Cu deposit.

    Science.gov (United States)

    Master, Sharad; Mirrander Ndhlovu, N.

    2015-04-01

    Ever since Wakefield (1978, IMM Trans., B87, 43-52) described a porphyry-type meta-morphosed Cu prospect, the ca 50 Mt, 0.5% Cu Samba deposit (12.717°S, 27.833°E), hosted by porphyry-associated quartz-sericite-biotite schists in northern Zambia, there has been controversy about its origin and significance. This is because it is situated in the basement to the world's largest stratabound sediment-hosted copper province, the Central African Copperbelt, which is hosted by rocks of the Neoproterozoic Katanga Supergroup. Mineralization in the pre-Katangan basement has long played a prominent role in ore genetic models, with some authors suggesting that basement Cu mineralization may have been recycled into the Katangan basin through erosion and redeposition, while others have suggested that the circulation of fluids through Cu-rich basement may have leached out the metals which are found concentrated in the Katangan orebodies. On the basis of ca 490-460 Ma Ar-Ar ages, Hitzman et al. (2012, Sillitoe Vol., SEG Spec. Publ., 16, 487-514) suggested that Samba represents late-stage impregnation of copper mineralization into the basement, and that it was one of the youngest copper deposits known in the Central African Copperbelt. If the Samba deposit really is that young, then it would have post-dated regional deformation and metamorphism (560-510 Ma), and it ought to be undeformed and unmetamorphosed. The Samba mineralization consists of chalcopyrite and bornite, occurring as disseminations, stringers and veinlets, found in a zone >1 km along strike, in steeply-dipping lenses up to 10m thick and >150m deep. Our new major and trace element XRF geochemical data (14 samples) show that the host rocks are mainly calc-alkaline metadacites. Cu is correlated with Ag (Cu/Ag ~10,000:1) with no Au or Mo. Our study focused on the microtextures and petrology of the Samba ores. We confirm that there is alteration of similar style to that accompanying classical porphyry Cu mineralization

  2. Wet etching methods for perovskite substrates

    NARCIS (Netherlands)

    Leca, Victor; Rijnders, Guus; Koster, Gertjan; Blank, Dave H.A.; Rogalla, Horst

    2000-01-01

    In oxide electronics substrates with atomically flat terraces are a request for growing high-quality epitaxial thin films. In this paper results on chemical etching of some substrates with perovskite, ABO3, structure (e.g., SrTiO3, LSAT - the (LaAlO3)0.3(Sr2AlTaO6)0.35 solid solution, and NdGaO3) ar

  3. Two Scale Model for Aggregation and Etching

    CERN Document Server

    John, G C; John, George C.; Singh, Vijay A.

    1995-01-01

    We propose a dual scale drift-diffusion model for interfacial growth and etching processes. The two scales are: (i) a depletion layer width surrounding the aggregate and (ii) a drift length.The interplay between these two antithetical scales yields a variety of distinct morphologies reported in electrochemical deposition of metals, viscous fingering in fluids and in porous silicon formation. Further, our algorithm interpolates between existing growth models (diffusion limited aggregation, ballistic deposition and Eden) for limiting values of these variables.

  4. Two-Layer Microstructures Fabricated by One-Step Anisotropic Wet Etching of Si in KOH Solution

    Directory of Open Access Journals (Sweden)

    Han Lu

    2016-01-01

    Full Text Available Anisotropic etching of silicon in potassium hydroxide (KOH is an important technology in micromachining. The residue deposition from KOH etching of Si is typically regarded as a disadvantage of this technology. In this report, we make use of this residue as a second masking layer to fabricate two-layer complex structures. Square patterns with size in the range of 15–150 μm and gap distance of 5 μm have been designed and tested. The residue masking layer appears when the substrate is over-etched in hydrofluoric acid (HF solution over a threshold. The two-layer structures of micropyramids surrounded by wall-like structures are obtained according to the two different masking layers of SiO2 and residue. The residue masking layer is stable and can survive over KOH etching for long time to achieve deep Si etching. The process parameters of etchant concentration, temperature, etching time and pattern size have been investigated. With well-controlled two-layer structures, useful structures could be designed for applications in plasmonic and microfluidic devices in the future.

  5. Photo-electrochemical etching of free-standing GaN wafer surfaces grown by hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    An investigation into the photo-electrochemical (PEC) etching of free-standing GaN wafers produced by hydride vapor phase epitaxial growth (HVPE) has found that etching is only possible with UV illumination in an acidic or basic electrolyte. Through photo-current measurement and X-ray analysis it was determined that lack of etching in a neutral electrolyte can be attributed to the formation of an oxide film on the GaN surface. Surface damage was also found to be a significant factor, with the etching rate and photo current density of surfaces treated by grinding and mechanical polishing being markedly less compared to a finely polished surface. Subsequent investigation of the luminescence and the etching characteristics of the intentionally-introduced scratches indicated that subsurface damage is difficult to remove from GaN by PEC etching due to the trapping of photo-excited carriers. A peculiar surface feature of concentric ring structures made up of alternating small and large pores was observed on the GaN surface along with small island regions, which is attributed to variations in the electronic properties of the GaN crystal that is created during HVPE growth

  6. Crystallographic orientation dependent etching of graphene layers

    Energy Technology Data Exchange (ETDEWEB)

    Nemes-Incze, Peter; Biro, Laszlo Peter [Research Institute for Technical Physics and Materials Science, PO. Box 49, 1525 Budapest (Hungary); Magda, Gabor [Budapest University of Technology and Economics (BME), PO Box 91, 1521 Budapest (Hungary); Kamaras, Katalin [Research Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, PO Box 49, 1525, Budapest (Hungary)

    2010-04-15

    Graphene has gripped the scientific community ever since its discovery in 2004, with very promising electronic properties and hopes to integrate graphene into nanoelectronic devices. For graphene to make its way into electronic devices, two major obstacles have to be overcome: reproducible preparation of large area graphene samples and patterning techniques to obtain functional components. In this paper we present a graphene etching technique, which is crystallographic orientation selective and allows for the patterning of graphene layers using a chemical reduction process. The process involves the reduction of the SiO{sub 2} support by the carbon in the graphene itself. This reaction only occurs at the sample edges and does not result in the degradation of the graphene crystal lattice itself. However, we have observed evidence of strong hole doping in our etched samples. This etching technique opens up new possibilities in graphene patterning and modification. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Transport through track etched polymeric blend membrane

    Indian Academy of Sciences (India)

    Kamlendra Awasthi; Vaibhav Kulshreshtha; B Tripathi; N K Acharya; M Singh; Y K Vijay

    2006-06-01

    Polymer blends of polycarbonate (PC) and polysulphone (PSF) having thickness, 27 m, are prepared by solution cast method. The transport properties of pores in a blend membrane are examined. The pores were produced in this membrane by a track etching technique. For this purpose, a thin polymer membrane was penetrated by a single heavy ion of Ni7+ of 100 MeV, followed by preferential chemical etching of the ion track. Ion permeation measurements show that pores in polymeric membrane are charged or neutralized, which depends upon the variation in concentration of the solvent. The – curve at concentration, N/10, shows that the pores are negatively charged, whereas at concentration, N/20, the linear nature of – curve indicates that the pores approach towards neutralized state and on further concentration, N/40, the pores become fully neutralized, consequently the rectifier behaviour of pores has been omitted. The gas permeability of hydrogen and carbon dioxide of this membrane was measured with increasing etching time. The permeability was measured from both the sides. Permeability at the front was larger than the permeability at the back which shows asymmetric behaviour of membranes.

  8. Track etching technique in membrane technology

    International Nuclear Information System (INIS)

    Track membrane (TM) technology is an example of industrial application of track etching technique. Track-etch membranes offer distinct advantages over conventional membranes due to their precisely determined structure. Their pore size, shape and density can be varied in a controllable manner so that a membrane with the required transport and retention characteristics can be produced. The use of heavy ion accelerators made it possible to vary LET of track-forming particles, angle distribution of pore channels and pore lengths. So far the track formation and etching process has been studied in much detail for several polymeric materials. Today we understand determining factors and have numerous empirical data enabling us to manufacture any particular product based on polyethylene terephthalate (PET) or polycarbonate (PC) films. Pore shape can be made cylindrical, conical, funnel-like, or cigar-like at will. A number of modification methods has been developed for creating TMs with special properties and functions. Applications of 'conventional' track membranes can be categorized into three groups: process filtration, cell culture, and laboratory filtration. The use in biology stands out among other areas. Nuclear track pores find diverse applications as model systems and as templates for the synthesis of micro- and nanostructures

  9. A new dry etch chemistry in deep trench silicon plasma etching for sub-100 nm technologies

    Energy Technology Data Exchange (ETDEWEB)

    Richter, Harald; Guenther, Siegfried; Costina, Ioan; Weidner, Guenter; Marschmeyer, Steffen; Silz, Heike [IHP, Frankfurt Oder (Germany); Wege, Stephan; Barth, Sven [Qimonda, Dresden (Germany)

    2008-07-01

    An essential market share of today's DRAM production is covered by devices using a trench capacitor cell. The technology and productivity driven shrink of lateral dimensions at approximately constant capacity specifications lead to an increased deep trench (DT) aspect ratio (depth/width) requirement. For sub-100nm technologies and a given capacitance and cell size the requirement for DT etching results in aspect ratios of 60 to 80. In this paper, we describe DT process developments driven by the following motivation: To realise aspect ratio requirements a high selectivity to hard mask is needed. Therefore, process conditions which lead to minimized hard mask consumption during Si DT etching are necessary. A new DT plasma etch chemistry was introduced using CO{sub 2} as a successful alternative to the standard passivation component O{sub 2} in the common gas mixture HBr/NF{sub 3}/O{sub 2}. Investigations were focused on a non conventional hard mask material containing a TiN/Ti sandwich structure. In former investigations TiN/Ti works only as a stop layer for DT etch. Approx. 3.5 micron deep trenches over a 200 nm TiN/Ti hard mask can be realized using HBr/NF{sub 3}/CO{sub 2} processes. During Si etching a passivation layer is formed on the hard mask regions protecting TiN and ensures the requested high selectivity.

  10. Optimization of etching and reading procedures for the Autoscan 60 track etch system

    International Nuclear Information System (INIS)

    The Los Alamos National Laboratory is charged with measuring the occupational exposure to radiological workers and contractors throughout the Laboratory, which includes many different sites with multiple and varied radiation fields. Of concern here are the high energy neutrons such as those generated during accelerator operations at Los Alamos Neutron Science Center (LANSCE). In 1993, the Los Alamos National Laboratory purchased an Autoscan 60 automated reader for use with chemically etched CR39 detectors. The dosimeter design employed at LANL uses a plastic, hemispherical case, encompassing a polystyrene pyramidal detector holder. The pyramidal holder supports three detectors at a 35 degree angle. Averaging the results of the three detectors minimizes the angular dependence normally associated with a planar dosimeter. The Autoscan 60 is an automated reading system for use with CR39 chemical etch detectors. The detectors are immersed in an etch solution to enhance the visibility of the damage sites caused by recoil proton impact with the hydrogen atoms in the detector. The authors decided to increase the etch time from six hours to 15 hours, while retaining the 70 C temperature. The reason for the change in the etch is to enhance the sensitivity and precision of the CR39 detector as indicated by this study

  11. Micromorphology of ceramic etching pattern for two CAD-CAM and one conventional feldspathic porcelain and need for post-etching cleaning.

    Science.gov (United States)

    Onisor, Ioana; Rocca, Giovanni Tommaso; Krejci, Ivo

    2014-01-01

    The aim of this in vitro study was to observe the effect of hydrofluoric acid (HF) on the surface of two glass ceramics for Cerec and to compare it with the effect on a conventional glass ceramic. Discs were cut from a feldspathic ceramic block (VitaMKII) and from a leucite reinforced glass ceramic (IPS EMPRESS CAD) for Cerec. 5% and 9% HF concentrations were used during 1 min and 2 min each. Afterwards samples were thoroughly water rinsed for 30 s. Half of the 9% HF 1 min samples were subsequently submitted to a complex post-etching cleaning. All samples were observed under a scanning electron microscope (SEM). The conventional feldspathic ceramic samples were built up on a refractory die and a platinum foil. They were treated with 9% HF for 2 min and water rinsed for 30 s. Half of the samples were submitted to the same post-etching cleaning protocol. All samples were examined under SEM and EDX. The Cerec ceramic samples and the platinum foil ones were clean and free of any precipitate after 30 s of water rinsing. Acid concentration, times of application and the postetching cleaning treatment did not influence the cleanliness of the samples. A thick layer of deposit was observed only on the refractory die samples. This was only diminished after the post-etching treatment. The EDX analysis detected the presence of fluoride (F) only on the refractory die samples.

  12. HF-based etching processes for improving laser damage resistance of fused silica optical surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Suratwala, T I; Miller, P E; Bude, J D; Steele, R A; Shen, N; Monticelli, M V; Feit, M D; Laurence, T A; Norton, M A; Carr, C W; Wong, L L

    2010-02-23

    The effect of various HF-based etching processes on the laser damage resistance of scratched fused silica surfaces has been investigated. Conventionally polished and subsequently scratched fused silica plates were treated by submerging in various HF-based etchants (HF or NH{sub 4}F:HF at various ratios and concentrations) under different process conditions (e.g., agitation frequencies, etch times, rinse conditions, and environmental cleanliness). Subsequently, the laser damage resistance (at 351 or 355 nm) of the treated surface was measured. The laser damage resistance was found to be strongly process dependent and scaled inversely with scratch width. The etching process was optimized to remove or prevent the presence of identified precursors (chemical impurities, fracture surfaces, and silica-based redeposit) known to lead to laser damage initiation. The redeposit precursor was reduced (and hence the damage threshold was increased) by: (1) increasing the SiF{sub 6}{sup 2-} solubility through reduction in the NH4F concentration and impurity cation impurities, and (2) improving the mass transport of reaction product (SiF{sub 6}{sup 2-}) (using high frequency ultrasonic agitation and excessive spray rinsing) away from the etched surface. A 2D finite element crack-etching and rinsing mass transport model (incorporating diffusion and advection) was used to predict reaction product concentration. The predictions are consistent with the experimentally observed process trends. The laser damage thresholds also increased with etched amount (up to {approx}30 {micro}m), which has been attributed to: (1) etching through lateral cracks where there is poor acid penetration, and (2) increasing the crack opening resulting in increased mass transport rates. With the optimized etch process, laser damage resistance increased dramatically; the average threshold fluence for damage initiation for 30 {micro}m wide scratches increased from 7 to 41 J/cm{sup 2}, and the statistical

  13. Atomic precision etch using a low-electron temperature plasma

    Science.gov (United States)

    Dorf, L.; Wang, J.-C.; Rauf, S.; Zhang, Y.; Agarwal, A.; Kenney, J.; Ramaswamy, K.; Collins, K.

    2016-03-01

    Sub-nm precision is increasingly being required of many critical plasma etching processes in the semiconductor industry. Accurate control over ion energy and ion/radical composition is needed during plasma processing to meet these stringent requirements. Described in this work is a new plasma etch system which has been designed with the requirements of atomic precision plasma processing in mind. In this system, an electron sheet beam parallel to the substrate surface produces a plasma with an order of magnitude lower electron temperature Te (~ 0.3 eV) and ion energy Ei (control over relative ion and radical concentrations. Another important element in this plasma system is low frequency RF bias capability which allows control of ion energy in the 2-50 eV range. Presented in this work are the results of etching of a variety of materials and structures performed in this system. In addition to high selectivity and low controllable etch rate, an important requirement of atomic precision etch processes is no (or minimal) damage to the remaining material surface. It has traditionally not been possible to avoid damage in RF plasma processing systems, even during atomic layer etch. The experiments for Si etch in Cl2 based plasmas in the aforementioned etch system show that damage can be minimized if the ion energy is kept below 10 eV. Layer-by-layer etch of Si is also demonstrated in this etch system using electrical and gas pulsing.

  14. Growth, etching, and stability of sputtered ZnO:Al for thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Owen, Jorj Ian

    2011-07-01

    Aluminum-doped zinc oxide (ZnO:Al) can fulfill many requirements in thin-film solar cells, acting as (1) a transparent contact through which the incident light is transmitted, (2) part of the back reflector, and (3) a source of light scattering. Magnetron sputtered ZnO:Al thin-films are highly transparent, conductive, and are typically texturized by post-deposition etching in a dilute hydrochloric acid (HCl) solution to achieve light scattering. The ZnO:Al thin-film electronic and optical properties, as well as the surface texture after etching, depend on the deposition conditions and the post-deposition treatments. Despite having been used in thin-film solar cells for more than a decade, many aspects regarding the growth, effects of heat treatments, environmental stability, and etching of sputtered ZnO:Al are not fully understood. This work endeavors to further the understanding of ZnO:Al for the purpose improving silicon thin-film solar cell efficiency and reducing ZnO:Al production costs. With regard to the growth of ZnO:Al, the influence of various deposition conditions on the resultant electrical and structural properties and their evolution with film thickness were studied. The surface electrical properties extracted from a multilayer model show that while carrier concentration of the surface layer saturates already at film thickness of 100 nm, the surface mobility continues to increases with film thickness, and it is concluded that electronic transport across grain boundaries limits mobility in ZnO:Al thin films. ZnO:Al deposited onto a previously etched ZnO:Al surface grows epitaxially, preserving both the original orientation and grain structure. Further, it is determined that a typical ZnO:Al used in thin-film silicon solar cells grows Zn-terminated on glass substrates. Concerning the affects of heat treatments and stability, it is demonstrated that a layer of amorphous silicon can protect ZnO:Al from degradation during annealing, and the mobility of Zn

  15. Comparison of wet and dry chrome etching with the CORE-2564

    Science.gov (United States)

    Buck, Peter D.; Grenon, Brian J.

    1994-02-01

    Chrome masks have traditionally been wet etched in an acidic solution of cerric ammonium nitrate. The etchant is commonly sprayed on the mask while the mask is slowly rotated, using an APT-914 or equivalent processor. While this process is well-understood, relatively trouble- free and inexpensive, the isotropic nature of wet etching results in an undercut of the chrome relative to the resist etch mask of approximately equals 150 nm per edge. Compensation for the undercut, in order to maintain control of the mean critical dimension (CD), is done by adjusting the printed feature size such that the undercut grows the printed feature to the desired final size. This sizing can be performed by manipulating the computer aided design database, which can be expensive and time consuming. In this paper, we present a comparison of wet and dry chrome etch processes using plates printed with the CORE-2564 in OCG-895 i resist. The differences in CD performance and resolution are illustrated.

  16. Influence of microhybrid resin and etching times on bleached enamel for the bonding of ceramic brackets

    Directory of Open Access Journals (Sweden)

    Leily Macedo Firoozmand

    2013-04-01

    Full Text Available The aim of this study was to evaluate the shear bond strength (SBS of polycrystalline ceramic brackets (PCB bonded after bleaching treatment using different composite resins and enamel etching times. A total of 144 bovine incisors were randomly divided into two study groups (n = 72, each as follows: G1, enamel bleached with 35% hydrogen peroxide, and G2 (control group, enamel unbleached. After the bleaching treatment, the samples were stored in artificial saliva for 14 days. These groups were further divided into two subgroups (n = 36, each as follows: GA, brackets bonded with Transbond XT (3M and GB, brackets bonded with Filtek Z250 (3M. For each resin used, three different etching times with 37% phosphoric acid (15, 30 and 60 seconds were tested. SBS tests were performed using a universal testing machine (EMIC, and the adhesive remnant index (ARI score was verified. Significant differences among the three experimental conditions and interactions between the groups were observed. The type of composite resin accounted for 24% of the influence on the bond strength, whereas the etching time and bleaching treatment accounted for 14.5% and 10% of the influence on bond strength, respectively. The ARI revealed that the most common area of adhesion failure was at the composite resin-bracket interface. The type of composite resin, etching time and external bleaching significantly influenced the SBS of PCB on enamel, even after 14 days of saliva storage.

  17. Comparison Of Bond Strength Of Orthodontic Molar Tubes Using Different Enamel Etching Techniques And Their Effect On Enamel

    International Nuclear Information System (INIS)

    In fixed orthodontic treatment, brackets and tubes are used for transferring orthodontic forces to the teeth. Those attachments were welded to cemented bands. Fifty years ago, direct bonding of brackets and other attachments has become a common technique in fixed orthodontic treatment. Orthodontists used to band teeth, especially molars and second premolars, to avoid the need for re bonding accessories in these regions of heavy masticatory forces. However, it is a known fact that direct bonding saves chair time as it does not require prior band selection and fitting, has the ability to maintain good oral hygiene, improve esthetics and make easier attachment to crowded and partially erupted teeth. Moreover, when the banding procedure is not performed with utmost care it can damage periodontal and/or dental tissues. Molar tubes bonding decreases the chance of decalcification caused by leakage beneath the bands. Since molar teeth are subjected to higher masticatory impact, especially lower molars, it would be convenient to devise methods capable of increasing the efficiency of their traditional bonding. These methods may include variation in bond able molar tube material, design, bonding materials and etching techniques. For achieving successful bonding, the bonding agent must penetrate the enamel surface; have easy clinical use, dimensional stability and enough bond strength. Different etching techniques were introduced in literature to increase the bond strength which includes: conventional acid etching, sandblasting and laser etching techniques. The process of conventional acid etching technique was invented In (1955) as the surface of enamel has great potential for bonding by micromechanical retention, to form ‘the mechanical lock‘. The primary effect of enamel etching is to increase the surface area. However, this roughens the enamel microscopically and results in a greater surface area on which to bond. By dissolving minerals in enamel, etchants remove the

  18. Time-varying wetting behavior on copper wafer treated by wet-etching

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Sheng-Hung; Wu, Chuan-Chang [Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan, ROC (China); Wu, Hsing-Chen [Advanced Technology Materials Inc, Hsinchu 310, Taiwan, ROC (China); Cheng, Shao-Liang [Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan, ROC (China); Sheng, Yu-Jane, E-mail: yjsheng@ntu.edu.tw [Department of Chemical Engineering, National Taiwan University, Taipei 106, Taiwan, ROC (China); Tsao, Heng-Kwong, E-mail: hktsao@cc.ncu.edu.tw [Department of Chemical and Materials Engineering, National Central University, Jhongli 320, Taiwan, ROC (China)

    2015-06-30

    Graphical abstract: - Highlights: • A thin oxide layer always remains on surfaces of Cu wafers after aqueous etching. • A pure Cu wafer is obtained by the HAc treatment and the water CA is about 45°. • The oxide layer and CA grow with time after the Cu wafer is exposed to air. • Surface roughness and hydrophobicity of pure Cu wafers grow rapidly in vacuum. - Abstract: The wet cleaning process in semiconductor fabrication often involves the immersion of the copper wafer into etching solutions and thereby its surface properties are significantly altered. The wetting behavior of a copper film deposited on silicon wafer is investigated after a short dip in various etching solutions. The etchants include glacial acetic acid and dilute solutions of nitric acid, hydrofluoric acid, and tetramethylammonium hydroxide. It was found that in most cases a thin oxide layer still remains on the surface of as-received Cu wafers when they are subject to etching treatments. However, a pure Cu wafer can be obtained by the glacial acetic acid treatment and its water contact angle (CA) is about 45°. As the pure Cu wafer is placed in the ambient condition, the oxide thickness grows rapidly to the range of 10–20 Å within 3 h and the CA on the hydrophilic surface also rises. In the vacuum, it is surprising to find that the CA and surface roughness of the pure Cu wafer can grow significantly. These interesting results may be attributed to the rearrangement of surface Cu atoms to reduce the surface free energy.

  19. Cosmogenic and implanted radionuclides studied by selective etching of lunar soils

    CERN Document Server

    Jull, A J T; McHargue, L R; Burr, G S; Donahue, D J

    2000-01-01

    We have made new measurements of the concentrations of sup 1 sup 4 C and sup 1 sup 0 Be in lunar surface soils. We discuss the results of these new studies based on different acid etching methods, which provide useful information for future experiments. We also discuss the implications of these results for the production of these radionuclides by galactic and solar cosmic radiation, and the direct implantation of solar-energetic particles into lunar surface material.

  20. Experiment and Results on Plasma Etching of SRF cavities

    Energy Technology Data Exchange (ETDEWEB)

    Upadhyay, Janardan [Old Dominion Univ., Norfolk, VA (United States); Im, Do [Old Dominion Univ., Norfolk, VA (United States); Peshl, J. [Old Dominion Univ., Norfolk, VA (United States); Vuskovic, Leposova [Old Dominion Univ., Norfolk, VA (United States); Popovic, Svetozar [Old Dominion Univ., Norfolk, VA (United States); Valente, Anne-Marie [Jefferson Lab., Newport News, VA (United States); Phillips, H. Lawrence [Jefferson Lab., Newport News, VA (United States)

    2015-09-01

    The inner surfaces of SRF cavities are currently chemically treated (etched or electropolished) to achieve the state of the art RF performance. We designed an apparatus and developed a method for plasma etching of the inner surface for SRF cavities. The process parameters (pressure, power, gas concentration, diameter and shape of the inner electrode, temperature and positive dc bias at inner electrode) are optimized for cylindrical geometry. The etch rate non-uniformity has been overcome by simultaneous translation of the gas point-of-entry and the inner electrode during the processing. A single cell SRF cavity has been centrifugally barrel polished, chemically etched and RF tested to establish a baseline performance. This cavity is plasma etched and RF tested afterwards. The effect of plasma etching on the RF performance of this cavity will be presented and discussed.

  1. Microleakage of composite resin restoration in cavities prepared by Er,Cr:YSGG laser irradiation and etched bur cavities in primary teeth.

    Science.gov (United States)

    Hossain, Mozammal; Nakamura, Yukio; Yamada, Yoshishige; Murakami, Yoshiko; Matsumoto, Koukichi

    2002-01-01

    In this in vitro study, the surface alterations of enamel and dentin in cavities prepared by Er,Cr:YSGG laser irradiation was investigated by scanning electron microscopy and compared to the microleakage degree after composite resin restoration with etched bur cavities in human primary teeth. The results confirmed that laser cavity surface facilitated a good adhesion with the restorative materials; the acid etch step can be easily avoided with the laser treatment.

  2. Factors affecting the molybdenum line slope by reactive ion etching

    International Nuclear Information System (INIS)

    Factors affecting the slope of the reactive ion etched molybdenum line have been studied with a simulation method and with experiments. Plasma chemistry and process parameters of the CF4/O2 mixture for the molybdenum etch have been examined. The theoretical calculation matches experimental results. Surface topography and composition of the etched molybdenum have been analyzed. A highly sloped molybdenum profile can be obtained by using the RIE method with a large process window

  3. Silicon nanostructures produced by laser direct etching

    OpenAIRE

    Müllenborn, Matthias; Dirac, Paul Andreas Holger; Petersen, Jon Wulff

    1995-01-01

    A laser direct-write process has been applied to structure silicon on a nanometer scale. In this process, a silicon substrate, placed in a chlorine ambience, is locally heated above its melting point by a continuous-wave laser and translated by high-resolution direct-current motor stages. Only the molten silicon reacts spontaneously with the molecular chlorine, resulting in trenches with the width of the laser-generated melt. Trenches have been etched with a width of less than 70 nm. To expla...

  4. Silicon nanostructures produced by laser direct etching

    DEFF Research Database (Denmark)

    Müllenborn, Matthias; Dirac, Paul Andreas Holger; Petersen, Jon Wulff

    1995-01-01

    A laser direct-write process has been applied to structure silicon on a nanometer scale. In this process, a silicon substrate, placed in a chlorine ambience, is locally heated above its melting point by a continuous-wave laser and translated by high-resolution direct-current motor stages. Only...... the molten silicon reacts spontaneously with the molecular chlorine, resulting in trenches with the width of the laser-generated melt. Trenches have been etched with a width of less than 70 nm. To explain the functional dependence of the melt size on absorbed power, the calculations based on a two...

  5. INCREASING THE PHOTOLUMINESCENCE INTENSITY OF Ge ISLANDS BY CHEMICAL ETCHING

    Institute of Scientific and Technical Information of China (English)

    高斐; 黄昌俊; 黄大定; 李建平; 孔梅影; 曾一平; 李晋闽; 林兰英

    2001-01-01

    Self-assembled Ge islands were grown on Si(100) substrate by Si2H6-Ge molecular beam epitaxy. After beingsubjected to chemical etching, it is found that the photoluminescence from the etched Ge islands became more intense and shifted to the higher-energy side compared to that of the as-deposited Ge islands. This behaviour was explained by the effect of chemical etching on the morphology of the Ge islands. Our results demonstrate that chemical etching can be a way to change the luminescence property of the as-deposited islands.

  6. Specifics of chemical etching of vanadium dioxide films in proximity to temperature of phase transformation metal-semiconductors

    International Nuclear Information System (INIS)

    A study was made on kinetics and mechanism of chemical etching of vanadium dioxide films in aqueous media (HNO3, HCl, HClO4, C2H2O4, KMnO4, FeCl3 solutions) close by the temperature of metal-semiconductor phase transformation. It is shown that phenomenon of abnormal increase of dissolution rate in the vicinity of temperature of metal-semiconductor phase transformation is typical for the process of chemical etching of vanadium dioxide films in acid media. Reduction of hydrogen ions takes place on vanadium dioxide at t>ttrans

  7. Admittance spectroscopy of CdTe/CdS solar cells subjected to varied nitric-phosphoric etching conditions.

    OpenAIRE

    Proskuryakov, Y. Y.; Durose, K; Taele, B.; Welch, G. P.; Oelting, S.

    2007-01-01

    In this work we investigate the electric and structural properties of CdTe/CdS solar cells subjected to a nitric-phosphoric (NP) acid etching procedure, employed for the formation of a Te-rich layer before back contacting. The etching time is used as the only variable parameter in the study, while admittance spectroscopy is employed for the characterization of the cells' electric properties as well as for the analysis of the defect energy levels. Particular attention was also given to the cha...

  8. Study on morphology of high-aspect-ratio grooves fabricated by using femtosecond laser irradiation and wet etching

    International Nuclear Information System (INIS)

    Highlights: • We studied morphologies of silicon grooves fabricated by laser irradiation and wet etching. • We found nano-ripple structures formed on the groove sidewall. • Formations of nano-ripples were due to the formation of standing wave and nanoplanes. • Remaining debris on the groove bottom was removed by KOH etching. - Abstract: Morphologies of high-aspect-ratio silicon grooves fabricated by using femtosecond laser irradiation and selective chemical etching of hydrofluoric acid (HF) were studied. Oxygen was deeply doped into silicon under femtosecond laser irradiation in air, and then the oxygen-doped regions were removed by HF etching to form high-aspect-ratio grooves. After HF etching, periodic nano-ripples which were induced in silicon by femtosecond laser were observed on the groove sidewalls. The ripple orientation was perpendicular or parallel to the laser propagation direction (z direction), which depended on the relative direction between the laser polarization direction and the scanning direction. The formation of nano-ripples with orientations perpendicular to z direction could be attributed to the standing wave generated by the interference of the incident light and the reflected light in z direction. The formation of nano-ripples with orientations parallel to z direction could be attributed to the formation of self-organized periodic nanoplanes (bulk nanogratings) induced by femtosecond laser inside silicon. Materials in the tail portion of laser-induced oxygen doping (LIOD) regions were difficult to be etched by HF solution due to low oxygen concentration. The specimen was etched further in KOH solution to remove remaining materials in LIOD regions and all-silicon grooves were fabricated

  9. Anisotropy of synthetic diamond in catalytic etching using iron powder

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Junsha [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Department of Mechanical Engineering, Keio University, Yokohama 223-8522 (Japan); Wan, Long, E-mail: wanlong1799@163.com [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Chen, Jing [College of Materials Science and Engineering, Hunan University, Hunan 410082 (China); Yan, Jiwang [Department of Mechanical Engineering, Keio University, Yokohama 223-8522 (Japan)

    2015-08-15

    Highlights: • Synthetic diamond crystallites were etched using iron without requiring hydrogen. • The effect of temperature on the etching behaviour was demonstrated. • The anisotropy of etching on different crystal planes was investigated. • The extent of etching on diamond surface was examined quantitatively. • A schematic model for diamond etching by iron is being proposed. - Abstract: This paper demonstrated a novel technique for catalytic etching of synthetic diamond crystallites using iron (Fe) powder without flowing gas. The effect of temperature on the etching behaviour on different crystal planes of diamond was investigated. The surface morphology and surface roughness of the processed diamond were examined by scanning electron microscope (SEM) and laser-probe surface profiling. In addition, the material composition of the Fe-treated diamond was characterized using micro-Raman spectroscopy and the distribution of chemical elements and structural changes on Fe-loaded diamond surfaces were analyzed by energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD), respectively. Results showed that at the same temperature the {1 0 0} plane was etched faster than the {1 1 1} plane, and that the etching rate of both {1 0 0} and {1 1 1} plane increased with temperature. The etch pits on {1 0 0} plane were reversed pyramid with flat {1 1 1} walls, while the etch holes on {1 1 1} plane were characterized with flat bottom. It was also demonstrated that graphitization of diamond and subsequent carbon diffusion in molten iron were two main factors resulting in the removal of carbon from the diamond surface.

  10. Etch rates for (100) gallium arsenide using aqueous H2SO4:H2O2 and aqua regia based etchants

    International Nuclear Information System (INIS)

    Etch rate experiments were carried out for (100) GaAs using etching solutions of H2SO4 :H2O2 :H2 O (3:1:1, 3:1:15), HCl:HNO3 (3:1), HCl:HNO3 :H2 O (1:1:1) and HCl:HNO3 :glycerol (with various dilutions of glycerol). Several differences were seen for the (100) plane compared to previous results for other crystal orientations. The sulphuric acid solutions showed much lower activation energies for etching the (100) plane. The HCl:HNO3 :glycerol solutions showed considerably lower etch rates for the (100) plane, probably indicating that they etch GaAs anisotropically. For a 1:1:2 solution of HCl:HNO3 :glycerol a decrease in the etch rate of (100) GaAs was observed in the presence of stirring. This is the opposite result to what is commonly assumed for this polishing etchant. It indicates that the main polishing process attributed to this etchant is not present, and in fact, the polishing quality of the etchant is probably limited by the etching process which is present. 14 refs., 8 figs

  11. 椭圆状微织构自润滑车刀切削性能试验%Cutting Performance of Self-lubricating Turning Tools with Elliptical Micro-textures

    Institute of Scientific and Technical Information of China (English)

    吴泽; 邓建新; 邢佑强; 程洁; 赵军

    2012-01-01

    采用激光加工方法在硬质合金刀具前刀面易磨损区域加工椭圆状微织构,并在微织构中填充MoS2固体润滑剂,制备了微织构自润滑刀具.运用有限元方法分析了微织构对刀具刀尖处应力分布的影响;将微织构自润滑刀具与传统刀具进行了干切削45号钢的对比试验.结果表明:微织构的存在对刀尖处的应力分布无显著影响,与传统刀具相比,微织构自润滑刀具能够有效降低切削力和切削温度,减小切屑变形,增加切屑卷曲,同时减缓刀具前刀面磨损.%Elliptical micro-textures were made by using laser on the rake face of the tungsten carbide cutting inserts. Molybdenum disulfide ( MoS2 ) solid lubricants were embedded into the micro-textures to form self-lubricating textured tools. Finite element analysis was conducted to assess the effect of micro-texture on the stress distribution of the cutting inserts. Dry cutting tests were carried out with these self-lubricated cutting tools and conventional cemented carbide tools. As the results, there is no conspicuous adverse effect on the stress distribution of the tool nose with micro-textures on the rake face. The cutting forces and the cutting temperatures with the self-lubricating textured tools were greatly reduced compared with that of conventional cemented carbide tools. Meanwhile, the rake wear and the chip deformation were reduced, and the chip coiling was improved with micro-texturing lubrication.

  12. Novel hydrophilic nanostructured microtexture on direct metal laser sintered Ti-6Al-4V surfaces enhances osteoblast response in vitro and osseointegration in a rabbit model.

    Science.gov (United States)

    Hyzy, Sharon L; Cheng, Alice; Cohen, David J; Yatzkaier, Gustavo; Whitehead, Alexander J; Clohessy, Ryan M; Gittens, Rolando A; Boyan, Barbara D; Schwartz, Zvi

    2016-08-01

    The purpose of this study was to compare the biological effects in vivo of hierarchical surface roughness on laser sintered titanium-aluminum-vanadium (Ti-6Al-4V) implants to those of conventionally machined implants on osteoblast response in vitro and osseointegration. Laser sintered disks were fabricated to have micro-/nano-roughness and wettability. Control disks were computer numerical control (CNC) milled and then polished to be smooth (CNC-M). Laser sintered disks were polished smooth (LST-M), grit blasted (LST-B), or blasted and acid etched (LST-BE). LST-BE implants or implants manufactured by CNC milling and grit blasted (CNC-B) were implanted in the femurs of male New Zealand white rabbits. Most osteoblast differentiation markers and local factors were enhanced on rough LST-B and LST-BE surfaces in comparison to smooth CNC-M or LST-M surfaces for MG63 and normal human osteoblast cells. To determine if LST-BE implants were osteogenic in vivo, we compared them to implant surfaces used clinically. LST-BE implants had a unique surface with combined micro-/nano-roughness and higher wettability than conventional CNC-B implants. Histomorphometric analysis demonstrated a significant improvement in cortical bone-implant contact of LST-BE implants compared to CNC-B implants after 3 and 6 weeks. However, mechanical testing revealed no differences between implant pullout forces at those time points. LST surfaces enhanced osteoblast differentiation and production of local factors in vitro and improved the osseointegration process in vivo. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 104A: 2086-2098, 2016. PMID:27086616

  13. Growing and Etching MoS2 on Carbon Nanotube Film for Enhanced Electrochemical Performance

    Directory of Open Access Journals (Sweden)

    Weiyu Xu

    2016-09-01

    Full Text Available In this work we directly synthesized molybdenum disulfide (MoS2 nanosheets on carbon nanotube film (MoS2@CNT via a two-step chemical vapor deposition method (CVD. By etching the obtained MoS2@CNT into 10% wt HNO3, the morphology of MoS2 decorated on CNT bundles was modulated, resulting in more catalytic active MoS2 edges being exposed for significantly enhanced electrochemical performance. Our results revealed that an 8 h acid etching sample exhibited the best performance for the oxygen evolution reaction, i.e., the current density reached 10 mA/cm2 under 375 mV over-potential, and the tafel slope was as low as 94 mV/dec. The enhanced behavior was mainly originated from the more catalytic sites in MoS2 induced by the acid etching treatment and the higher conductivity from the supporting CNT films. Our study provides a new route to produce two-dimensional layers on CNT films with tunable morphology, and thus may open a window for exploring its promising applications in the fields of catalytic-, electronic-, and electrochemical-related fields.

  14. Washable and wear-resistant superhydrophobic surfaces with self-cleaning property by chemical etching of fibers and hydrophobization.

    Science.gov (United States)

    Xue, Chao-Hua; Li, Ya-Ru; Zhang, Ping; Ma, Jian-Zhong; Jia, Shun-Tian

    2014-07-01

    Superhydrophobic poly(ethylene terephthalate) (PET) textile surfaces with a self-cleaning property were fabricated by treating the microscale fibers with alkali followed by coating with polydimethylsiloxane (PDMS). Scanning electron microscopy analysis showed that alkali treatment etched the PET and resulted in nanoscale pits on the fiber surfaces, making the textiles have hierarchical structures. Coating of PDMS on the etched fibers affected little the roughening structures while lowered the surface energy of the fibers, thus making the textiles show slippery superhydrophobicity with a self-cleaning effect. Wettability tests showed that the superhydrophobic textiles were robust to acid/alkaline etching, UV irradiation, and long-time laundering. Importantly, the textiles maintained superhydrophobicity even when the textiles are ruptured by severe abrasion. Also colorful images could be imparted to the superhydrophobic textiles by a conventional transfer printing without affecting the superhydrophobicity. PMID:24942304

  15. The effect of exposure duration of self etch dentin bonding on the toxicity of human gingival fibroblast of cell culture

    Directory of Open Access Journals (Sweden)

    Sri Lestari

    2008-06-01

    Full Text Available Self etch dentin bonding created to make light easily activate the application of composite resin on tooth surface. The monomer content has acid effect that could irritate tooth pulp. The purpose of this study was to evaluate the effect of light exposure duration of self etch dentin bonding on toxicity of human gingival fibroblast of cell culture by MTT assay. Self etch dentin bonding was used as on experimental unit and the sample was exposed by visible light curing in different duration: 10, 20, 30 seconds and immerged in artificial saliva in pH 7 for 24 hours. 100 µl artificial saliva was exposed to human gingival fibroblast of cell culture 20.000 cells/100 µl RPMI for 24 hours. Toxicity was evaluated by MTT assay, optical density was measured using 550 nm spectrophotometer. The data was analyzed using Kruskal Wallis in 5% degree of significance. The result showed that increasing exposure duration (10, 20, 30 seconds of self etch dentin bonding will reduce the toxicity of human gingival fibroblast of cell culture. It is concluded that 30 seconds-exposure of self etch dentin bonding will reduce the toxicity of human gingival fibroblast of cell culture.

  16. On the mechanism of anisotropic etching of silicon

    NARCIS (Netherlands)

    Elwenspoek, M.

    1993-01-01

    A new model is proposed that explains the anisotropy of the etch rate of single crystalline silicon in certain etchants. It is inspired from theories of crystal growth. We assume that the (111)-face is flat on an atomic scale. Then the etch rate should be governed by a nucleation barrier of one atom

  17. Fast pore etching on high resistivity n-type silicon via photoelectrochemistry

    Institute of Scientific and Technical Information of China (English)

    Bao Xiao-Qing; Ge Dao-Han; Zhang Sheng; Li Jin-Peng; Zhou Ping; Jiao Ji-Wei; Wang Yue-Lin

    2009-01-01

    In this paper, five factors, namely the HF (hydrofluoric acid) concentration, field strength, illumination intensity as well as the oxidizing-power and conductivity of electrolytes were found to strongly affect the fast pore etching. The oxidizing power of aqueous HF electrolyte of different concentrations was especially measured and analysed. A positive correlation between optimal bias and HF concentration was generally observed and the relationship was semi-quantitatively interpreted. Pore density notably increased with enhanced HF-concentration or bias even on patterned substrates where 2D (two-dimensional) nuclei were densely pre-textured. The etch rate can reach 400μm/h and the aspect ratio of pores can be readily driven up to 250.

  18. Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

    Science.gov (United States)

    Bioud, Youcef A.; Boucherif, Abderraouf; Belarouci, Ali; Paradis, Etienne; Drouin, Dominique; Arès, Richard

    2016-10-01

    We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous As2O3. Finally, a qualitative model is proposed to explain the porous As2O3 layer formation on p-GaAs substrate.

  19. Marginal microleakage in vitro study of occlusal fissures sealing prepared and etched or not with Er: YAG laser

    International Nuclear Information System (INIS)

    The aim of this in vitro study was to evaluate the degree of marginal microleakage in occlusal sealing by invasive techniques, after preparation with Er:YAG laser followed or not by Er:YAG laser etching and compared to the conventional technique. Thirty human premolars were divided into three groups: A (control group) - cavities were prepared with high speed and etched with 37% orthophosphoric acid; group B - cavities were prepared with Er:YAG (350 mJ, 4 Hz and 112 J /cm2) and etched with 37% orthophosphoric acid; group C - cavities were prepared with Er:YAG laser (350 mJ, 4 Hz and 112 J/cm2), and etched with Er:YAG laser (80 mJ, 4 Hz and 25 m/cm2). All cavities were treated with the same adhesive system and restored with flow composite according to manufacturer instructions. Teeth were submitted to thermal cycling procedures and immersed in 50% Silver Nitrate Solutions for 8 hours in total darkness. Teeth were sectioned longitudinally in the bucco-lingual direction, in slices of 1 mm thick. Each slice was immersed into photo developing solution under 16 hours of fluorescent light. Slices were photographed and microleakage was scored from 0 to 7 J by three standard examiners. Results showed statistically significant differences for group C (Er:YAG laser preparation and etching). We concluded that Er:YAG laser can be used for cavity preparation of occlusal sealing, like the conventional high speed method. However, this laser, used as enamel etching agent, could not promote an adequate surface for adhesive procedures. (author)

  20. Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

    Directory of Open Access Journals (Sweden)

    Ajay Kumar

    2014-02-01

    Full Text Available This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that the light transmission through etched fiber at 1550 nm wavelength optical source becomes highly temperature sensitive, compared to the temperature insensitive behavior observed in un-etched fiber for the range on 30ºC to 100ºC at 1550 nm. The sensor response under temperature cycling is repeatable and, proposed to be useful for low frequency analogue signal transmission over optical fiber by means of inline thermal modulation approach.

  1. Fabrication of beta-PVDF membranes by track etching and specific functionalization of nano-pores

    International Nuclear Information System (INIS)

    Poly(vinylidene fluoride)(β-PVDF) nano-porous membranes were made by chemical revealing of tracks induced from swift heavy ions irradiation. Pore opening and radii can be varied in a controllable manner with the etching time. nano-pores size in nano-meter scale (from 12 nm to 50 nm) appears to be linearly dependent to the etching time. It was then necessary to adapt the characterization tools to these membranes. Consequently, we resorted to the use of structural analysis methods (Scanning Electron Microscopy, Small Angle Neutron Scattering) and developed evaluation methods of the membranes transport properties like gas permeation and ionic diffusion. Results obtained confirm the pores opening (break through) and the hydrophobicity of material, which we have modified with hydrophilic molecules. In this precise case, the grafting of acrylic acid was initiated by the radicals still remains after track-etching (called radio-grafting). This key result was obtained by a study of Electron Paramagnetic Resonance. The labelling of introduced chemical functionalities with fluorescent probes was a very effective mean to visualize very few amounts of molecules by confocal microscopy. The radio-grafting was found specifically localized inside etched tracks. The protocol offers the possibility to create a double functionality, the one localized inside the nano-pores and the other on the surface of membranes. The modification of radio-grafting parameters (the acrylic acid concentration, solvent nature, use of transfer agent) and the chemical properties of the nano-pore walls have a direct incidence on the transport properties. (author)

  2. Tensile bond strength of self-etching versus total-etching adhesive systems under different dentinal substrate conditions Resistência de união à tração de sistemas adesivos autocondicionantes versus de condicionamento total, em diferentes condições de substrato dentinário

    OpenAIRE

    Alexandre Henrique Susin; Walison Arthuso Vasconcellos; José Roberto Cury Saad; Osmir Batista de Oliveira Junior

    2007-01-01

    The use of acid etchants to produce surface demineralization and collagen network exposure, allowing adhesive monomers interdiffusion and consequently the formation of a hybrid layer, has been considered the most efficient mechanism of dentin bonding. The aim of this study was to compare the tensile bond strength to dentin of three adhesive systems, two self-etching ones (Clearfil SE Bond - CSEB and One Up Bond F - OUBF) and one total-etching one (Single Bond - SB), under three dentinal subst...

  3. Evaluation of track-etch detectors

    International Nuclear Information System (INIS)

    A study was conducted to evaluate the precision and accuracy of Track-Etch passive radon detectors manufactured by the Terradex Corporation. Four configurations of these detectors were exposed to known radon concentrations in the Eastern Environmental Radiation Facility radon chamber under varying exposure regimines and sent to Terradex for processing and readout. Data reported by Terradex and our own exposure concentrations were used to calculate calibration numbers for each configuration which were then compared to calibration numbers used by Terradex. Results of our study indicate that groups of detectors exposed together and processed together demonstrate similarity in response. Groups of detectors exposed and processed at different times, however, did not always agree with each other nor with published Terradex calibration numbers

  4. Formation of Micro- and Nanostructures on the Nanotitanium Surface by Chemical Etching and Deposition of Titania Films by Atomic Layer Deposition (ALD

    Directory of Open Access Journals (Sweden)

    Denis V. Nazarov

    2015-12-01

    Full Text Available In this study, an integrated approach was used for the preparation of a nanotitanium-based bioactive material. The integrated approach included three methods: severe plastic deformation (SPD, chemical etching and atomic layer deposition (ALD. For the first time, it was experimentally shown that the nature of the etching medium (acidic or basic Piranha solutions and the etching time have a significant qualitative impact on the nanotitanium surface structure both at the nano- and microscale. The etched samples were coated with crystalline biocompatible TiO2 films with a thickness of 20 nm by Atomic Layer Deposition (ALD. Comparative study of the adhesive and spreading properties of human osteoblasts MG-63 has demonstrated that presence of nano- and microscale structures and crystalline titanium oxide on the surface of nanotitanium improve bioactive properties of the material.

  5. Homogeneous luminescent stain etched porous silicon elaborated by a new multi-step stain etching method

    Energy Technology Data Exchange (ETDEWEB)

    Hajji, M., E-mail: mhajji2001@yahoo.fr [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopôle de Borj-Cédria BP 95, Hammam-Lif 2050 (Tunisia); Institut Supérieur d’Electronique et de Communication de Sfax, route Menzel Chaker Km 0.5, BP 868, Sfax 3018 (Tunisia); Khalifa, M.; Slama, S. Ben; Ezzaouia, H. [Laboratoire de Photovoltaïque, Centre de Recherche et des Technologies de l’Energie, Technopôle de Borj-Cédria BP 95, Hammam-Lif 2050 (Tunisia)

    2013-11-01

    This paper presents a new method to produce porous silicon which derived from the conventional stain etching (SE) method. But instead of one etching step that leads to formation of porous layer, the substrate is subjected to an initial etching step with a duration Δt{sub 0} followed by a number of supplementary short steps that differs from a layer to another. The duration of the initial step is just the necessary time to have a homogenous porous layer on the whole surface of the substrate. It was found that this duration is largely dependent of the doping type and level of the silicon substrate. The duration of supplementary steps was kept as short as possible to prevent the formation of bubbles on the silicon surface during silicon dissolution which leads generally to inhomogeneous porous layers. It is found from surface investigation by atomic force microscopy (AFM) that multistep stain etching (MS-SE) method allows to produce homogeneous porous silicon nanostructures compared to the conventional SE method. The chemical composition of the obtained porous layers has been evaluated using Fourier transform infrared spectroscopy (FTIR). Photoluminescence (PL) measurement shows that porous layers produced by SE and MS-SE methods have comparable spectra indicating that those layers are composed of nanocrystallites with comparable sizes. But the intensity of photoluminescence of layer elaborated by MS-SE method is higher than that elaborated by the SE method. Total reflectance characteristics show that the presented method allows the production of porous silicon layers with controllable thicknesses and optical properties. Results for porous silicon layers elaborated on heavily doped n-type silicon show that the reflectance can be reduced to values less than 3% in the major part of the spectrum.

  6. E-beam inspection of EUV mask defects: To etch or not to etch?

    Science.gov (United States)

    Bonam, Ravi; Tien, Hung-Yu; Park, Chanro; Halle, Scott; Wang, Fei; Corliss, Daniel; Fang, Wei; Jau, Jack

    2014-04-01

    EUV Lithography is aimed to be inserted into mainstream production for sub-20nm pattern fabrication. Unlike conventional optical lithography, frequent defectivity monitors (adders, repeaters etc.) are required in EUV lithography. Due to sub-20nm pattern and defect dimensions e-beam inspection of critical pattern areas is essential for yield monitor. In previous work we showed sub-10nm defect detection sensitivity1 on patterned resist wafers. In this work we report 8-10× improvement in scan rates of etched patterns compared to resist patterns without loss in defect detection sensitivity. We observed good etch transfer of sub-10nm resist features. A combination of smart scan strategies with improved etched pattern scan rates can further improve throughput of e-beam inspection. An EUV programmed defect mask with Line/Space, Contact patterns was used to evaluate printability of defects and defect detection (Die-Die and Die-Database) capability of the e-beam inspection tool. Defect inspection tool parameters such as averaging, threshold value were varied to assess its detection capability and were compared to previously obtained results on resist patterns.

  7. Optimized condition for etching fused-silica phase gratings with inductively coupled plasma technology.

    Science.gov (United States)

    Wang, Shunquan; Zhou, Changhe; Ru, Huayi; Zhang, Yanyan

    2005-07-20

    Polymer deposition is a serious problem associated with the etching of fused silica by use of inductively coupled plasma (ICP) technology, and it usually prevents further etching. We report an optimized etching condition under which no polymer deposition will occur for etching fused silica with ICP technology. Under the optimized etching condition, surfaces of the fabricated fused silica gratings are smooth and clean. Etch rate of fused silica is relatively high, and it demonstrates a linear relation between etched depth and working time. Results of the diffraction of gratings fabricated under the optimized etching condition match theoretical results well.

  8. Deep wet etching of borosilicate glass and fused silica with dehydrated AZ4330 and a Cr/Au mask

    International Nuclear Information System (INIS)

    This research highlights a superior glass-wet-etch technique which enables a glass wafer to be etched for more than 20 h in 49 wt% hydrofluoric acid (HF) only with Cr/Au film and a common positive photoresist, AZ4330. We demonstrated that pits on the wet-etched glass wafer were generated not only due to HF diffusion through the Cr/Au film but also due to pinholes on the Cr/Au films created by the diffusion of the Cr/Au etchant through a photoresist etching-mask during the Cr/Au wet etching process. These two types of diffusion, HF diffusion and Cr/Au etchant diffusion, were eliminated by the thermal curing of a photoresist (PR), AZ4330, before the Cr/Au wet etching process. The curing process allowed the PR to dehydrate, increased the hydrophobicity, and prevented the diffusion of the hydrophilic HF and Cr/Au etchant. Optimization of the curing process was performed, showing that curing at 130 °C for 20 min was the proper condition. With the optimized process, a 525 µm thick borosilicate glass wafer was penetrated with 49%wt HF. A fused silica wafer 525 µm thick was also wet-etched and penetrated with 49 wt% HF at 10 h. Moreover, no pits were found in wet etching of the fused silica for 20 h in 49 wt% HF. These findings demonstrate that the proposed technique allows the wet etching of a glass wafer for more than 20 h in 49%wt HF, the best result thus far. We fabricated a glass substrate with a 217.0 µm deep cavity and a penetrating through-via using the proposed technique, proving the feasibility of the product as an optical component with a surface roughness of 45.5 Å in the cavity. (paper)

  9. Otimização das superfícies dos implantes: plasma de titânio e jateamento com areia condicionado por ácido - estado atual Optimization of implant surfaces: titanium plasma spray and acid-etched sandblasting - current state

    Directory of Open Access Journals (Sweden)

    Evandro Scigliano AMARANTE

    2001-06-01

    Full Text Available O objetivo deste trabalho foi analisar os resultados da literatura publicada sobre superfícies de implantes tratadas com plasma de titânio (TPS e jateadas com areia e tratadas com ácido (SLA. Isoladamente, a textura da superfície foi a característica mais marcante na promoção da osseointegração. Os estudos da topografia da superfície implantar no comportamento celular mostraram que o osso se deposita indistintamente em superfícies porosas ou lisas, seja em implantes de cerâmica, titânio, ou em ampla variedade de outras superfícies. A porosidade portanto, não é condição necessária para que ocorra aposição óssea, entretanto, desempenha um papel preponderante no percentual de aposição óssea sobre a superfície do implante, assim como na velocidade com que essa deposição ocorre. Nesta revisão destacou-se uma promissora superfície denominada SLA, tratada com jatos de areia (partículas pequenas seguida de ataque ácido. Os resultados demonstraram que tanto a rugosidade como o tratamento químico das superfícies podem influenciar bastante a força superficial de cisalhamento (resistência oferecida à remoção. Estas características da superfície do titânio, além de otimizar o procedimento, podem ainda, por exemplo, permitir a colocação dos implantes em função mais precocemente e ampliar a gama de aplicações possíveis para osso alveolar de densidade inferior, ou favorecer sua aplicação em osso regenerado.The aim of this review was to update the concepts regarding the preparation of the surfaces of titanium implants, focusing on TPS (titanium plasma-sprayed implants and SLA (sandblasted and acid etched implants. Texture was the most remarkable isolated feature, regarded as an osseointegration promoter. In a comprehensive review of the effects of implant surface topography on cell behavior, one can verify that there is bone apposition onto the implant surface regardless of its characteristics: polished or

  10. Solid polymer electrolyte composite membrane comprising plasma etched porous support

    Science.gov (United States)

    Liu, Han; LaConti, Anthony B.

    2010-10-05

    A solid polymer electrolyte composite membrane and method of manufacturing the same. According to one embodiment, the composite membrane comprises a rigid, non-electrically-conducting support, the support preferably being a sheet of polyimide having a thickness of about 7.5 to 15 microns. The support has a plurality of cylindrical pores extending perpendicularly between opposing top and bottom surfaces of the support. The pores, which preferably have a diameter of about 0.1 to 5 microns, are made by plasma etching and preferably are arranged in a defined pattern, for example, with fewer pores located in areas of high membrane stress and more pores located in areas of low membrane stress. The pores are filled with a first solid polymer electrolyte, such as a perfluorosulfonic acid (PFSA) polymer. A second solid polymer electrolyte, which may be the same as or different than the first solid polymer electrolyte, may be deposited over the top and/or bottom of the first solid polymer electrolyte.

  11. Dry etching technologies for the advanced binary film

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  12. Structural and magnetic etch damage in CoFeB

    International Nuclear Information System (INIS)

    A detailed understanding of the interfacial properties of thin films used in magnetic media is critical for the aggressive component scaling required for continued improvement in storage density. In particular, it is important to understand how common etching and milling processes affect the interfacial magnetism. We have used polarized neutron reflectometry and transmission electron microscopy to characterize the structural and magnetic properties of an ion beam etched interface of a CoFeB film. We found that the etching process results in a sharp magnetic interface buried under a nanometer scale layer of non-magnetic, compositionally distinct material

  13. Fabrication and properties of etched GaN nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Shields, Philip; Wang, Wang; Causa, Federica; Allsopp, Duncan [Department of Electronic and Electrical Engineering, University of Bath, Bath, BA2 7AY (United Kingdom); Hugues, Maxime; Zuniga-Perez, Jesus [CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne (France); Cooke, Mike; Dineen, Mark [Oxford Instruments Plasma Technology, North End, Yatton, Bristol BS49 4AP (United Kingdom)

    2012-03-15

    Gallium nitride nanorod arrays have been created via dry etching in Cl{sub 2}/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Chlorine-based plasma etching of GaN

    Energy Technology Data Exchange (ETDEWEB)

    Shul, R.J.; Briggs, R.D. [Sandia National Labs., Albuquerque, NM (United States); Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Constantine, C.; Baratt, C. [Plasma-Therm, Inc., Saint Petersburg, FL (United States)

    1997-02-01

    The wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 {micro}m/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved GaN etch quality over more conventional reactive ion etch (RIE) systems.

  15. Fabrication of Pure Silica Core Multimode Ultraviolet Optical Fibre Probes by Tube Etching

    Institute of Scientific and Technical Information of China (English)

    HUO Xin; PAN Shi; WU Shi-Fa

    2007-01-01

    As a light wave-guide component for transmitting ultraviolet (UV) laser pulses, pure silica core UV fibre probes have attracted a great deal of attention in the near-field optical data storage and bio-medical studies. We fabricate UV fibre probes with tips in dimension of about 2-5μm and taper angle 16° by the tube etching method, using 40% HF acid as etching solution and xylene as overlayer. Probes produced have curvy configuration with smooth surface. The yield of fine probes is rather high and etching operation greatly simplified. With higher damage threshold, pure silica core multimode UV fibre probes can be coupled into more laser power. In addition, using UV light reduces the cutoff wavelength of the fibre probes, which is in favour of increasing the transmission efficiency of the probe. Furthermore, the larger tip dimension helps to enhance the light throughput either. The advances of fabrication technique of UV optical fibre probe may further support the studies of UV light data storage, pulsed laser biosurgery and UV photolithography.

  16. Silicon solar cells textured by reactive ion etching and processed with screen printing

    Energy Technology Data Exchange (ETDEWEB)

    Burgers, A.R.; Tool, C.J.J.; Hylton, J.D.; Weeber, A.W. [ECN Solar and Wind, Netherlands Energy Research Foundation ECN, Petten (Netherlands); Verholen, A.G.B.J.; Gardeniers, J.G.E.; De Boer, M.J.; Elwenspoek, M.C. [MESA Research Institute for Micro Electronics, Materials- and Molecular Engineering, and Sensors and Actuators, University of Twente, Enschede (Netherlands)

    1998-07-01

    Reactive Ion Etching (RIE) can texture multicrystalline silicon wafers very well. RIE has the advantage over alkaline etches that it is not sensitive to the crystallographic orientation. RIE has the advantage over acid etches that it can be controlled much better. This work describes multicrystalline silicon solar cells textured by RIE and processed with an industrial process sequence consisting of mainly screen-printing steps. We also made mini-modules of the RIE textured cells. The RIE texturing parameters can be varied to give different textures. Care must be taken that the texture is sufficiently rough to give a low encapsulated reflectance but not so rough that carriers generated by light absorbed in the texture recombine at the surface and cannot be collected at the p-n junction. The screen printing on RIE textured cells was successful. We were able to make cells with both low reflectance and good quantum efficiency. Due to encapsulation problems we were not able to demonstrate an efficiency gain yet. 10 refs.

  17. The magnetic properties and microstructure of Co-Pt thin films using wet etching process.

    Science.gov (United States)

    Lee, Chang-Hyoung; Cho, Young-Lae; Lee, Won-Pyo; Suh, Su-Jeong

    2014-11-01

    Perpendicular magnetic recording (PMR) is a promising candidate for high density magnetic recording and has already been applied to hard disk drive (HDD) systems. However, media noise still limits the recording density. To reduce the media noise and achieve a high signal-to-noise ratio (SNR) in hard disk media, the grains of the magnetic layer must be magnetically isolated from each other. This study examined whether sputter-deposited Co-Pt thin films can have adjacent grains that are physically isolated. To accomplish this, the effects of the sputtering conditions and wet etching process on magnetic properties and the microstructure of the films were investigated. The film structure was Co-Pt (30 nm)/Ru (30 nm)/NiFe (10 nm)/Ta (5 nm). The composition of the Co-Pt thin films was Co-30.7 at.% Pt. The Co-Pt thin films were deposited in Ar gas at 5, 10, 12.5, and 15 mTorr. Wet etching process was performed using 7% nitric acid solution at room temperature. These films had high out-of-plane coercivity of up to 7032 Oe, which is twice that of the as-deposited film. These results suggest that wet etched Co-Pt thin films have weaker exchange coupling and enhanced out-of-plane coercivity, which would reduce the medium noise. PMID:25958585

  18. Toward a durable superhydrophobic aluminum surface by etching and ZnO nanoparticle deposition.

    Science.gov (United States)

    Rezayi, Toktam; Entezari, Mohammad H

    2016-02-01

    Fabrication of suitable roughness is a fundamental step for acquiring superhydrophobic surfaces. For this purpose, a deposition of ZnO nanoparticles on Al surface was carried out by simple immersion and ultrasound approaches. Then, surface energy reduction was performed using stearic acid (STA) ethanol solution for both methods. The results demonstrated that ultrasound would lead to more stable superhydrophobic Al surfaces (STA-ZnO-Al-U) in comparison with simple immersion method (STA-ZnO-Al-I). Besides, etching in HCl solution in another sample was carried out before ZnO deposition for acquiring more mechanically stable superhydrophobic surface. The potentiodynamic measurements demonstrate that etching in HCl solution under ultrasound leads to superhydrophobic surface (STA-ZnO-Al(E)-U). This sample shows remarkable decrease in corrosion current density (icorr) and long-term stability improvement versus immersion in NaCl solution (3.5%) in comparison with the sample prepared without etching (STA-ZnO-Al-U). Scanning electron micrograph (SEM) and energy-dispersive X-ray spectroscopy (EDX) confirmed a more condense and further particle deposition on Al substrate when ultrasound was applied in the system. The crystallite evaluation of deposited ZnO nanoparticles was carried out using X-ray diffractometer (XRD). Finally, for STA grafting verification on Al surface, Fourier transform infrared in conjunction with attenuated total reflection (FTIR-ATR) was used as a proper technique. PMID:26513735

  19. Light-Cured Self-Etch Adhesives Undergo Hydroxyapatite-Triggered Self-Cure.

    Science.gov (United States)

    Liu, Y; Bai, X; Liu, Y W; Wang, Y

    2016-03-01

    Light cure is a popular mode of curing for dental adhesives. However, it suffers from inadequate light delivery when the restoration site is less accessible, in which case a self-cure mechanism is desirable to salvage any compromised polymerization. We previously reported a novel self-cure system mediated by ethyl 4-(dimethylamino)-benzoate (4E) and hydroxyapatite (HAp). The present work aims to investigate if such self-cure phenomenon takes place in adhesives that underwent prior inadequate light cure and to elucidate if HAp released from the dental etching process is sufficient to trigger it. Model self-etch adhesives were formulated with various components, including bis[2-methacryloyloxy)ethyl]-phosphate (2MP) as acidic monomer and trimethylbenzoyl-diphenylphosphine oxide (TPO) as photoinitiator. In vitro evolution of degree of conversion (DC) of HAp-incorporated adhesives was monitored by infrared spectroscopy during light irradiation and dark storage. Selected adhesives were allowed to etch and extract HAp from enamel, light-cured in situ, and stored in the dark, after which Raman line mapping was used to obtain spatially resolved DC across the enamel-resin interface. Results showed that TPO+4E adhesives reached DC similar to TPO-only counterparts upon completion of light irradiation but underwent another round of initiation that boosted DC to ~100% regardless of HAp level or prior light exposure. When applied to enamel, TPO-only adhesives had ~80% DC in resin, which gradually descended to ~50% in enamel, whereas TPO+4E adhesives consistently scored ~80% DC across the enamel-resin interface. These observations suggest that polymerization of adhesives that underwent insufficient light cure is salvaged by the novel self-cure mechanism, and such salvaging effect can be triggered by HAp released from dental substrate during the etching process.

  20. Effectiveness of immediate bonding of etch-and-rinse adhesives to simplified ethanol-saturated dentin

    Directory of Open Access Journals (Sweden)

    Leandro Afonso Guimarães

    2012-04-01

    Full Text Available This study examined the immediate bond strength of etch-and-rinse adhesives to demineralized dentin saturated with either water or absolute ethanol. The research hypothesis was that there would be no difference in bond strength to dentin between water or ethanol wet-bonding techniques. The medium dentin of 20 third molars was exposed (n = 5. The dentin surface was then acid-etched, left moist and randomly assigned to be saturated via either water wet-bonding (WBT or absolute ethanol wet-bonding (EBT. The specimens were then treated with one of the following etch-and-rinse adhesive systems: a 3-step, water-based system (Adper Scotchbond Multipurpose, or SBMP or a 2-step, ethanol/water-based system (Adper Single Bond 2, or SB. Resin composite build-ups were then incrementally constructed. After water storage for 24 h at 37°C, the tensile strength of the specimens was tested in a universal testing machine (0.5 mm/min. Data were analyzed by two-way ANOVA and Tukey's test (a = 5%. The failure modes were verified using a stereomicroscope (40'. For both adhesives, no significant difference in bond strength was observed between WBT and EBT (p > 0.05. The highest bond strength was observed for SB, regardless of the bonding technique (p < 0.05. No significant interaction between adhesives and bonding techniques was noticed (p = 0.597. There was a predominance of adhesive failures for all tested groups. The EBT and WBT displayed similar immediate bond strength means for both adhesives. The SB adhesive exhibited higher means for all conditions tested. Further investigations are needed to evaluate long-term bonding to dentin mediated by commercial etch-and-rinse adhesives using the EBT approach.

  1. Erbium doped stain etched porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Diaz, B. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Diaz-Herrera, B. [Departamento de Energia Fotovoltaica, Instituto Tecnologico de Energias Renovables (ITER), Poligono Industrial de Granadilla, 38611 S/C Tenerife (Spain); Guerrero-Lemus, R. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain)], E-mail: rglemus@ull.es; Mendez-Ramos, J.; Rodriguez, V.D. [Departamento de Fisica Fundamental, Experimental Electronica y Sistemas, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Hernandez-Rodriguez, C. [Departamento de Fisica Basica, Universidad de La Laguna, Avda. Astrofisico Francisco Sanchez, 38204 La Laguna, S/C de Tenerife (Spain); Martinez-Duart, J.M. [Departamento de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid, 28049 Cantoblanco, Madrid (Spain)

    2008-01-15

    In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO{sub 3} solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er{sup 3+} ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy.

  2. Effect of postoperative bleaching on microleakage of etch-and-rinse and self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Vajihesadat Mortazavi

    2011-01-01

    Full Text Available Background: Bleaching the discoloured teeth may affect the tooth/composite interface. The aim of this in vitro experimental study was to evaluate the effect of vital tooth bleaching on microleakage of existent class V composite resin restorations bonded with three dental bonding agents. Methods : Class V cavities were prepared on buccal surfaces of 72 intact, extracted human anterior teeth with gingival margins in dentin and occlusal margins in enamel, and randomly divided into 3 groups. Cavities in the three groups were treated with Scotch bond Multi-Purpose, a total etch system and Prompt L-Pop and iBond, two self-etch adhesives. All teeth were restored with Z250 resin composite material and thermo-cycled. Each group was equally divided into the control and the bleached subgroups (n = 12. The bleached subgroups were bleached with 15% carbamide peroxide gel for 8 hours a day for 15 days. Microleakage scores were evaluated on the incisal and cervical walls. Data were analyzed using Kruskal-Wallis, Mann-Whitney and Bonferroni post-hoc tests (α = 0.05. Results: Bleaching with carbamide peroxide gel significantly increased the microleakage of composite restorations in Prompt L-Pop group at dentinal walls (P = 0.001. Bleaching had no effect on microleakage of restorations in the Scotch bond Multi-Purpose and iBond groups. Conclusion: Vital tooth bleaching with carbamide peroxide gel has an adverse effect on marginal seal of dentinal walls of existent composite resin restorations bonded with prompt L-Pop self-etch adhesive.

  3. Hydrothermal Etching Treatment to Rutile TiO2 Nanorod Arrays for Improving the Efficiency of CdS-Sensitized TiO2 Solar Cells.

    Science.gov (United States)

    Wan, Jingshu; Liu, Rong; Tong, Yuzhu; Chen, Shuhuang; Hu, Yunxia; Wang, Baoyuan; Xu, Yang; Wang, Hao

    2016-12-01

    Highly ordered TiO2 nanorod arrays (NRAs) were directly grown on an F:SnO2 (FTO) substrate without any seed layer by hydrothermal route. For a larger surface area, the second-step hydrothermal treatment in hydrochloric acid was carried out to the as-prepared TiO2 NRAs. The results showed that the center portion of the TiO2 nanorods were dissolved in the etching solution to form a nanocave at the initial etching process. As the etching time extended, the tip parts of the nanocave wall split into lots of nanowires with a reduced diameter, giving rise to a remarkable increase of specific surface area for the TiO2 NRAs. The TiO2 films after etching treatment were sensitized by CdS quantum dots (QDs) to fabricate quantum dot-sensitized solar cells (QDSSCs), which exhibited a significant improvement in the photocurrent density in comparison with that of the un-treated device, this mainly attributed to the enhancement of QD loading and diffused reflectance ability. Through modifying the etching TiO2 films with TiCl4, a relatively high power conversion efficiency (PCE) of 3.14 % was obtained after optimizing the etching time. PMID:26754938

  4. Surface modification with alumina blasting and H2SO4-HCl etching for bonding two resin-composite veneers to titanium.

    Science.gov (United States)

    Taira, Yohsuke; Egoshi, Takafumi; Kamada, Kohji; Sawase, Takashi

    2014-02-01

    The purpose of this study was to investigate the effect of an experimental surface treatment with alumina blasting and acid etching on the bond strengths between each of two resin composites and commercially pure titanium. The titanium surface was blasted with alumina and then etched with 45wt% H2SO4 and 15wt% HCl (H2SO4-HCl). A light- and heat-curing resin composite (Estenia) and a light-curing resin composite (Ceramage) were used with adjunctive metal primers. Veneered specimens were subjected to thermal cycling between 4 and 60°C for 50,000 cycles, and the shear bond strengths were determined. The highest bond strengths were obtained for Blasting/H2SO4-HCl/Estenia (30.2 ± 4.5 MPa) and Blasting/Etching/Ceramage (26.0 ± 4.5 MPa), the values of which were not statistically different, followed by Blasting/No etching/Estenia (20.4 ± 2.4 MPa) and Blasting/No etching/Ceramage (0.8 ± 0.3 MPa). Scanning electron microscopy observations revealed that alumina blasting and H2SO4-HCl etching creates a number of micro- and nanoscale cavities on the titanium surface, which contribute to adhesive bonding.

  5. Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation

    Directory of Open Access Journals (Sweden)

    Tiago S. Monteiro

    2015-10-01

    Full Text Available In this paper, Isopropanol (IPA availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH solutions was investigated. Squares of 8 to 40 µm were patterned to (100 oriented silicon wafers through DWL (Direct Writing Laser photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing and the angle formed towards the (100 plane.

  6. GaN Nanowires Synthesized by Electroless Etching Method

    KAUST Repository

    Najar, Adel

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  7. Polishing of quartz by rapid etching in ammonium bifluoride.

    Science.gov (United States)

    Vallin, Orjan; Danielsson, Rolf; Lindberg, Ulf; Thornell, Greger

    2007-07-01

    The etch rate and surface roughness of polished and lapped AT-cut quartz subjected to hot (90, 110, and 130 degrees C), concentrated (50, 65, 80 wt %) ammonium bi-fluoride have been investigated. Having used principal component analysis to verify experimental solidity and analyze data, we claim with confidence that this parameter space does not, as elsewhere stated, allow for a polishing effect or even a preserving setting. Etch rates were found to correlate well, and possibly logarithmically, with temperature except for the hottest etching applied to lapped material. Roughness as a function of temperature and concentration behaved well for the lapped material, but lacked systematic variation in the case of the polished material. At the lowest temperature, concentration had no effect on etch rate or roughness. Future efforts are targeted at temperatures and concentrations closer to the solubility limit.

  8. Cryogenic rf test of the first plasma etched SRF cavity

    CERN Document Server

    Upadhyay, J; Popović, S; Valente-Feliciano, A -M; Im, D; Phillips, L; Vušković, L

    2016-01-01

    Plasma etching has a potential to be an alternative processing technology for superconducting radio frequency (SRF) cavities. An apparatus and a method are developed for plasma etching of the inner surfaces of SRF cavities. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity is used. The single cell cavity is mechanically polished, buffer chemically etched afterwards and rf tested at cryogenic temperatures for a baseline test. This cavity is then plasma processed. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise manner to establish segmented plasma processing. The cavity is rf tested afterwards at cryogenic temperatures. The rf test and surface condition results are presented.

  9. Influence of an Applied Potential on the Anisotropic Etch rates of Silicon in KOH

    NARCIS (Netherlands)

    Nguyen, Q.D.; Elwenspoek, M.

    2005-01-01

    The anisotropic etch rate of p-type single crystal silicon has been systematically studied as a function of an externally applied electrical potential. Changes in overall etch rate are consistent with a combined chemical etching and electrochemical oxidation mechanism. Etch rate results of orientati

  10. Modeling of Etching Nano-surfaces of Indium Phosphide

    Directory of Open Access Journals (Sweden)

    S.L. Khrypko

    2015-03-01

    Full Text Available This paper describes a mechanism for obtaining a regular porous structure InP, which is to use the method of photoelectrochemical etching. Through the use of simulation etching at the nanoscale, it is possible to get a regular uniform grid of nanopores on the surface of indium phosphide, which allows us to understand the mechanisms and the establishment of technological regimes anodic structures indium phosphide to produce a variety of devices.

  11. Dry etching of single crystal PMN-PT piezoelectric material.

    OpenAIRE

    Agnus, Joël; Alexandru Ivan, Ioan; Queste, Samuel

    2011-01-01

    International audience During the last decade, the applications of PMN-PT spread significantly. Unlike PZT, the appropriate microtechnologies for PMN-PT Piezo-MEMS aren't fully documented in the literature. This paper deals with the PMN-PT etching by inductively coupled plasma (ICP) technique, also known as DRIE. The paper quantitatively presents the etching parameters of PMN-PT by the Ar/C4F8 gas combination and reports some related useful experience.

  12. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    Science.gov (United States)

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  13. Micro-textures and in situ sulfur isotopic analysis of spheroidal and zonal sulfides in the giant Jinding Zn-Pb deposit, Yunnan, China: Implications for biogenic processes

    Science.gov (United States)

    Xue, Chunji; Chi, Guoxiang; Fayek, Mostafa

    2015-05-01

    The Jinding deposit in Yunnan, southwest China, is the largest sandstone- and conglomerate-hosted Zn-Pb deposit in the world. In this paper, we report various micro-textures of spheroidal and zonal sulfides, such as pellet-shaped and colloform aggregates of pyrite and sphalerite, from the deposit and interpret them to be possibly related to micro-colonies of sulfate reducing bacteria, probably supporting an in situ BSR hypothesis. Micro-scale sulfur isotope analysis in different parts of the spheroidal and zonal sulfide aggregates, using secondary ion mass spectrometry (SIMS), revealed δ34S (VCDT) values as low as -48.4‰ for sulfides formed in the early-main stage disseminated ores in the western part of the deposit, possibly suggesting maximum sulfur isotopic fractionation through BSR. Relatively elevated δ34S (VCDT) values (-7.7‰ to -34.8‰, mainly from -10‰ to -20‰) for the late-stage, cavity-filling ores in the eastern part of the deposit, are interpreted to be possibly related to elevated temperatures close to the hydrothermal conduit and elevated δ34S values of the remaining sulfates resulting from the preceding BSR processes. The apparent discrepancy between the low temperatures required for BSR and the high temperatures indicated by fluid inclusions (>120 °C) may be reconciled through invoking episodic influx of ore-forming hydrothermal fluids into a shallow, relatively cool environment. It is proposed that the host rocks of the Jinding deposit have not been buried to great depths (⩽1 km), which, combined with the availability of hydrocarbons in the Jinding dome (a paleo-oil and gas reservoir), provides an ideal environment for BSR. Episodic influx of metal-carrying hydrothermal fluids temporarily and locally suppressed BSR and promoted thermo-chemical sulfate reduction (TSR), resulting in deposit- and micro-scale variations of δ34S.

  14. Methods of removal of defects arising at liquid etching of polycrystalline silicon

    Directory of Open Access Journals (Sweden)

    Ivanchykou A. E.

    2008-02-01

    Full Text Available The paper presents a model of generation of defects having the form of spots on the surface of the polycrystalline silicon during processing of semiconductor wafers with hydrofluoric acid based etchant, and a model of removal of such defects in chemical solutions. The authors investigate how the centrifuge speed during drying and the relief of structures, produced on the plate, effect the number of defects. It is shown that there is a possibility to remove defects by chemical treatment in the peroxide-ammonia solutions (PAS and also by sequence of chemical cleaning in Karo mixture, SiO2 etching and treatment in PAS.

  15. Effect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon

    Directory of Open Access Journals (Sweden)

    Pushpendra Kumar

    2007-01-01

    Full Text Available The most common fabrication technique of porous silicon (PS is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms.

  16. Etched glass self-assembles into micron-size hollow platonic solids

    KAUST Repository

    Boukhalfa, Sofiane

    2012-10-03

    The interaction between the spreading of a hydrofluoric acid-based drop on a glass surface and its etching rate gives rise to hollow crystals of various shapes, including cubes, triangles, and icosahedra. These geometries are dependent on their position with respect to the contact line, where a rim forms by agglutination, similar to the formation of a coffee stain. Atomic force microscopy indentation and transmission electron microscopy observations revealed that these crystals are hollow ammonium-fluosilicate-based cryptohalite shells. © 2012 American Chemical Society.

  17. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  18. Plasma Etching of Tapered Features in Silicon for MEMS and Wafer Level Packaging Applications

    International Nuclear Information System (INIS)

    This paper is a brief report of plasma etching as applied to pattern transfer in silicon. It will focus more on concept overview and strategies for etching of tapered features of interest for MEMS and Wafer Level Packaging (WLP). The basis of plasma etching, the dry etching technique, is explained and plasma configurations are described elsewhere. An important feature of plasma etching is the possibility to achieve etch anisotropy. The plasma etch process is extremely sensitive to many variables such as mask material, mask openings and more important the plasma parameters

  19. The influence of H2O2 concentration to the structure of silicon nanowire growth by metal-assisted chemical etching

    Science.gov (United States)

    Omar, Hafsa; Jani, Abdul Mutalib Md.; Rusop, Mohamad; Abdullah, Saifollah

    2016-07-01

    A simple and low cost method to produce well aligned silicon nanowires at large areas using Ag-assisted chemical etching at room temperature were presented. The structure of silicon nanowires growth by metal-assisted chemical etching was observed. Prior to the etching, the silicon nanowires were prepared by electroless metal deposited (EMD) in solution containing hydrofluoric acid and hydrogen peroxide in Teflon vessel. The silver particle was deposited on substrate by immersion in hydrofluoric acid and silver nitrate solution for sixty second. The silicon nanowires were growth in different hydrogen peroxide concentration which are 0.3M, 0.4M, 0.5M and 0.6M and 0.7M.The influence of hydrogen peroxide concentration to the formation of silicon nanowires was studied. The morphological properties of silicon nanowires were investigated using field emission scanning electron microscopy (FESEM) and Energy Dispersive X-Ray Spectroscopy (EDS).

  20. Effect of thermocycling on the durability of etch-and-rinse and self-etch adhesives on dentin.

    Science.gov (United States)

    Sangwichit, Ketkamon; Kingkaew, Ruksaphon; Pongprueksa, Pong; Senawongse, Pisol

    2016-01-01

    The objective was to compare bond strengths of adhesives with/without thermocycling and to analyze the micromorphology of resindentin interfaces. Flat dentin surfaces were prepared and divided into eight groups to bond with four etch-and-rinse adhesives (Optibond FL, Adper Scotchbond Multi-Purpose, Optibond Solo Plus, and Single Bond 2) and four self-etch adhesives (Clearfil SE Bond, Adper SE Plus, Clearfil S(3) Bond and Adper Easy Bond). Specimens were further divided into two subgroups subjected for with/without thermocycling and then subjected to both micro-tensile test and resin-dentin interface evaluation. The results revealed that there were significant differences in bond strength between the groups with and without thermocycling for all etch-and-rinse groups and for the Adper Easy Bond self-etch group (padhesives and Adper SE Plus and Adper Easy Bond after thermocycling. PMID:27251990

  1. Comparison of acidulated phosphate fluoride gel and hydrofluoric acid etchants for porcelain-composite repair.

    Science.gov (United States)

    Tylka, D F; Stewart, G P

    1994-08-01

    Hydrofluoric acid etches porcelain to produce a porous surface visible under scanning electron microscopy when compared to an acidulated phosphate fluoride gel. Some investigators have suggested the greater porosity of the hydrofluoric acid etch produces a greater composite-to-porcelain bond. This investigation tested that assumption with two common fluoride etchants. The etched surfaces were first viewed under scanning electron microscopy to ensure that a characteristic etch was achieved. Both etchants yielded bond strengths that produced cohesive failure of all samples. This suggested that the intraoral use of hydrofluoric acid is no more effective than the less dangerous acidulated phosphate fluoride gel.

  2. A randomized control clinical trial of fissure sealant retention: Self etch adhesive versus total etch adhesive

    Directory of Open Access Journals (Sweden)

    Nadia Aman

    2015-01-01

    Full Text Available Context: There are limited studies on comparison of Total etch (TE and Self etch (SE adhesive for placement of sealants. Aims: The aim of the study was to compare the retention of fissure sealants placed using TE adhesive to those sealants placed using SE (seventh generation adhesive. Settings and Design: The study was conducted in the dental section, Aga Khan University Hospital. This study was a randomized single blinded trial with a split mouth design. Materials and Methods: The study included 37 patients, 101 teeth were included in both study groups. The intervention arm was treated with SE Adhesive (Adper Easy One, 3M ESPE, US. Control arm received TE adhesive (Adper Single Bond 2, 3M ESPE, US before sealant application. The patients were followed after 6 months for assessment of sealant retention. Statistical analysis used: Interexaminer agreement for outcome assessment was assessed by Kappa Statistics and outcome in intervention group was assessed by McNemar′s test. Results: Ninety-one pairs of molar (90% were reevaluated for sealant retention. Complete retention was 56% in TE arm and 28% in SE arm with an odds ratio (OR of 3.7. Conclusions: Sealants applied with TE adhesives show higher rate of complete sealant retention than SE adhesive.

  3. Etching and forward transfer of fused silica in solid-phase by femtosecond laser-induced solid etching (LISE)

    International Nuclear Information System (INIS)

    We present a femtosecond laser-based technique for etching and forward transfer of bulk transparent materials in solid-phase. Femtosecond laser pulses with λ=800 nm were focused through a fused silica block onto an absorbing thin film of Cr. A constraining Si wafer was pressed into tight contact with the Cr film to prevent lift-off of the film. A combination of the high temperature and pressure of the Cr, and compressive stress from the Si, resulted in etching of smooth features from the fused silica by cracking. Unlike in conventional ablative or chemical etching, the silica was removed from the bulk as single solid-phase pieces which could be collected on the Si. Using this so-called laser-induced solid etching (LISE) technique, 1-2 μm deep pits and channels have been produced in the silica surface, and corresponding dots and lines deposited on the Si. The threshold fluence for etching was found to be ∼0.4J/cm2 with ∼130 fs duration pulses. The morphology of the etched features are investigated as functions of fluence and exposure to multiple pulses.

  4. Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching

    Directory of Open Access Journals (Sweden)

    Nikulin Valery

    2011-01-01

    Full Text Available Abstract Films of nanocrystalline silicon (nc-Si were prepared from hydrogenated amorphous silicon (a-Si:H by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. The optical reflectance spectroscopy revealed the nc-Si formation as well as the high optical quality of the formed films. The Raman scattering spectroscopy was used to estimate the mean size and volume fraction of nc-Si in the annealed films, which were about 4 to 8 nm and 44 to 90%, respectively, depending on the annealing regime. In contrast to as-deposited a-Si:H films, the nc-Si films after stain etching exhibited efficient photoluminescence in the spectral range of 600 to 950 nm at room temperature. The photoluminescence intensity and lifetimes of the stain etched nc-Si films were similar to those for conventional porous Si formed by electrochemical etching. The obtained results indicate new possibilities to prepare luminescent thin films for Si-based optoelectronics.

  5. Method for Fabricating Textured High-Haze ZnO:Al Transparent Conduction Oxide Films on Chemically Etched Glass Substrates.

    Science.gov (United States)

    Park, Hyeongsik; Nam, Sang-Hun; Shin, Myunghun; Ju, Minkyu; Lee, Youn-Jung; Yu, Jung-Hoon; Jung, Junhee; Kim, Sunbo; Ahn, Shihyun; Boo, Jin-Hyo; Yi, Junsin

    2016-05-01

    We developed a technique for forming textured aluminum-doped zinc oxide (ZnO:Al) transparent conductive oxide (TCO) films on glass substrates, which were etched using a mixture of hydrofluoric (HF) and hydrochloric (HCl) acids. The etching depth and surface roughness increased with an increase in the HF content and the etching time. The HF-based residues produced insoluble hexafluorosilicate anion- and oxide impurity-based semipermeable films, which reduced the etching rate. Using a small amount of HCl dissolved the Ca compounds, helping to fragment the semipermeable film. This formed random, complex structures on the glass substrates. The angled deposition of three layers of ZnO:Al led to the synthesis of multiscaled ZnO:Al textures on the glass substrates. The proposed approach resulted in textured ZnO:Al TCO films that exhibited high transmittance (-80%) and high haze (> 40%) values over wavelengths of 400-1000 nm, as well as low sheet resistances (< 18 Ω/sq)..Si tandem solar cells based on the ZnO:Al textured TCO films exhibited photocurrents and cell efficiencies that were 40% higher than those of cells with conventional TCO films. PMID:27483840

  6. A high efficiency industrial polysilicon solar cell with a honeycomb-like surface fabricated by wet etching using a photoresist mask

    Science.gov (United States)

    Zhang, Hong; Ding, Bin; Chen, Tianhang

    2016-11-01

    In this paper, an effective and low cost method of texturization was introduced into the fabrication process for industrial multicrystalline silicon solar cell production. The purpose of the method was to reduce reflectance by creating a honeycomb-like textured surface using a masked wet etching process. A negative photoresist film was selected as an etching mask. Although large surface roughness of wafer was considered to affect the adhesion and acid resistance of etching mask, a honeycomb-like textured surface with a pitch of 18 μm was fabricated successfully. The etched pits had a nearly smooth spherical segment surface, an average aperture of 15.1 μm, and a depth of 6.5 μm. This regular textured surface had a low light reflectivity of approximately 20.5% and greatly increased the carrier lifetime. Compared with multicrystalline silicon solar cells textured by conventional acid etching, the average short circuit current increased by 2.2% and the average efficiency increased from 17.41% to 17.75%, a net gain of 0.34%. And a high throughput above 2400 pieces per hour was obtained. This texturing technique is expected to promote the application of diamond-wire cut multicrystalline silicon wafers with the low saw-damage in the future.

  7. Protein adsorption and cell adhesion on three-dimensional polycaprolactone scaffolds with respect to plasma modification by etching and deposition techniques

    Science.gov (United States)

    Myung, Sung Woon; Ko, Yeong Mu; Kim, Byung Hoon

    2014-11-01

    In this work, protein adsorption and cell adhesion on three-dimensional (3D) polycaprolactone (PCL) scaffolds treated by plasma etching and deposition were performed. The 3D PCL scaffold used as a substrate of a bone tissue was fabricated by recent rapid prototype techniques. To increase surface properties, such as hydrophilicity, roughness, and surface chemistry, through good protein adhesion on scaffolds, oxygen (O2) plasma etching and acrylic acid or allyamine plasma deposition were performed on the 3D PCL scaffolds. The O2 plasma etching induced the formation of random nanoporous structures on the roughened surfaces of the 3D PCL scaffolds. The plasma deposition with acrylic acid and allyamine induced the chemical modification for introducing a functional group. The protein adsorption increased on the O2 plasma-etched surface compared with an untreated 3D PCL scaffold. MC3T3-E1 cells adhered bioactively on the etched and deposited surface compared with the untreated surface. The present plasma modification might be sought as an effective technique for enhancing protein adsorption and cell adhesion.

  8. Pulsed high-density plasmas for advanced dry etching processes

    Energy Technology Data Exchange (ETDEWEB)

    Banna, Samer; Agarwal, Ankur; Cunge, Gilles; Darnon, Maxime; Pargon, Erwine; Joubert, Olivier [Applied Materials Inc., 974 E. Arques Avenue, M/S 81312, Sunnyvale, California 94085 (United States); CNRS-LTM, 17 rue des Martyrs, 38054 Grenoble Cedex (France)

    2012-07-15

    Plasma etching processes at the 22 nm technology node and below will have to satisfy multiple stringent scaling requirements of microelectronics fabrication. To satisfy these requirements simultaneously, significant improvements in controlling key plasma parameters are essential. Pulsed plasmas exhibit considerable potential to meet the majority of the scaling challenges, while leveraging the broad expertise developed over the years in conventional continuous wave plasma processing. Comprehending the underlying physics and etching mechanisms in pulsed plasma operation is, however, a complex undertaking; hence the full potential of this strategy has not yet been realized. In this review paper, we first address the general potential of pulsed plasmas for plasma etching processes followed by the dynamics of pulsed plasmas in conventional high-density plasma reactors. The authors reviewed more than 30 years of academic research on pulsed plasmas for microelectronics processing, primarily for silicon and conductor etch applications, highlighting the potential benefits to date and challenges in extending the technology for mass-production. Schemes such as source pulsing, bias pulsing, synchronous pulsing, and others in conventional high-density plasma reactors used in the semiconductor industry have demonstrated greater flexibility in controlling critical plasma parameters such as ion and radical densities, ion energies, and electron temperature. Specifically, plasma pulsing allows for independent control of ion flux and neutral radicals flux to the wafer, which is key to eliminating several feature profile distortions at the nanometer scale. However, such flexibility might also introduce some difficulty in developing new etching processes based on pulsed plasmas. Therefore, the main characteristics of continuous wave plasmas and different pulsing schemes are compared to provide guidelines for implementing different schemes in advanced plasma etching processes based on

  9. Range and etching behaviour of swift heavy ions in polymers

    Science.gov (United States)

    Singh, Lakhwant; Singh, Mohan; Samra, Kawaljeet Singh; Singh, Ravinder

    Aliphatic (CR-39) and aromatic (Lexan polycarbonate) polymers have been irradiated with a variety of heavy ions such as 58Ni, 93Nb, 132Xe, 139La, 197Au, 208Pb, 209Bi, and 238U having energy ranges of 5.60-8.00 MeV/n in order to study the range and etching kinetics of heavy ion tracksE The ion fluence (range ˜104-105 ions/cm2) was kept low to avoid the overlapping of etched tracks. The measured values of maximum etched track length were corrected due to bulk etching and over etching to obtain the actual range. The experimental results of range profiles were compared with those obtained by the most used procedures employed in obtaining range and stopping power. The range values of present ions have been computed using the semiempirical codes (SRIM-98, SRIM-2003.26, and LISE++:0-[Hub90]) in order to check their accuracy. The merits and demerits of the adopted formulations have been highlighted in the present work. It is observed that the range of heavy ions is greater in aromatic polymers (Lexan polycarbonate) as compared to the aliphatic polymers (CR-39) irradiated with similar ions having same incident energies. The SRIM-98 and SRIM2003.26 codes don't show any significant trend in deviations, however, LISE++:0-[Hub90] code provides overall good agreement with the experimental values. The ratio of track etch rate (along projectile trajectory) to the bulk etch rate has also been studied as a function of energy loss of heavy ions in these polymers.

  10. Chemical etching to dissolve dislocation cores in multicrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gregori, N.J. [Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom); Murphy, J.D., E-mail: john.murphy@materials.ox.ac.uk [Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom); Sykes, J.M.; Wilshaw, P.R. [Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH (United Kingdom)

    2012-08-01

    Multicrystalline silicon wafers are used for approximately half of all solar cells produced at present. These wafers typically have dislocation densities of up to {approx}10{sup 6} cm{sup -2}. Dislocations and associated impurities act as strong recombination centres for electron-hole pairs and are one of the major limiting factors in multicrystalline silicon substrate performance. In this work we have explored the possibility of using chemical methods to etch out the cores of dislocations from mc-Si wafers. We aim to maximise the aspect ratio of the depth of the etched structure to its diameter. We first investigate the Secco etch (1K{sub 2}Cr{sub 2}O{sub 7} (0.15 M): 2HF (49%)) as a function of time and temperature. This etch removes material from dislocation cores much faster than grain boundaries or the bulk, and produces tubular holes at dislocations. Aspect ratios of up to {approx}7:1 are achieved for {approx}15 {mu}m deep tubes. The aspect ratio decreases with tube depth and for {approx}40 {mu}m deep tubes is just {approx}2:1, which is not suitable for use in bulk multicrystalline silicon photovoltaics. We have also investigated a range of etches based on weaker oxidising agents. An etch comprising 1I{sub 2} (0.01 M): 2HF (49%) attacked dislocation cores, but its etching behaviour was extremely slow (<0.1 {mu}m/h) and the pits produced had a low aspect ratio (<2:1).

  11. Advanced Simulation Technology to Design Etching Process on CMOS Devices

    Science.gov (United States)

    Kuboi, Nobuyuki

    2015-09-01

    Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

  12. Characterization of electric discharge machining, subsequent etching and shot-peening as a surface treatment for orthopedic implants

    Energy Technology Data Exchange (ETDEWEB)

    Stráský, Josef, E-mail: josef.strasky@gmail.com [Charles University, Department of Physics of Materials (Czech Republic); Havlíková, Jana; Bačáková, Lucie [Institute of Physiology, Academy of Sciences of the Czech Republic (Czech Republic); Harcuba, Petr [Charles University, Department of Physics of Materials (Czech Republic); Mhaede, Mansour [Clausthal University of Technology, Institute of Materials Science and Engineering (Germany); Faculty of Engineering, Zagazig University (Egypt); Janeček, Miloš [Charles University, Department of Physics of Materials (Czech Republic)

    2013-09-15

    Presented work aims at multi-method characterization of combined surface treatment of Ti–6Al–4V alloy for biomedical use. Surface treatment consists of consequent use of electric discharge machining (EDM), acid etching and shot peening. Surface layers are analyzed employing scanning electron microscopy and energy dispersive X-ray spectroscopy. Acid etching by strong Kroll's reagent is capable of removing surface layer of transformed material created by EDM. Acid etching also creates partly nanostructured surface and significantly contributes to the enhanced proliferation of the bone cells. The cell growth could be positively affected by the superimposed bone-inspired structure of the surface with the morphological features in macro-, micro- and nano-range. Shot peening significantly improves poor fatigue performance after EDM. Final fatigue performance is comparable to benchmark electropolished material without any adverse surface effect. The proposed three-step surface treatment is a low-cost process capable of producing material that is applicable in orthopedics.

  13. Environmental photostability of SF6-etched silicon nanocrystals

    Science.gov (United States)

    Liptak, R. W.; Yang, J.; Kramer, N. J.; Kortshagen, U.; Campbell, S. A.

    2012-10-01

    We report on the long-term environmental stability of the photoluminescent (PL) properties of silicon nanocrystals (SiNCs). We prepared sulfur hexafluoride (SF6) etched SiNCs in a two-stage plasma reactor and investigated their PL stability against UV irradiation in air. Unlike SiNCs with hydrogen-passivated surfaces, the SF6-etched SiNCs exhibit no photobleaching upon extended UV irradiation despite surface oxidation. Furthermore, the PL quantum yield also remains stable upon heating the SF6-etched SiNCs up to 160 °C. The observed thermal and UV stability of SF6-etched SiNCs combined with their PL quantum yields of up to ˜50% make them attractive candidates for UV downshifting to enhance the efficiency of solar cells. Electron paramagnetic spin resonance indicates that the SF6-etched SiNCs have a lowered density of defect states, both as-formed and after room temperature oxidation in air.

  14. Microstructure of fibrils separated from polyacrylonitrile fibers by ultrasonic etching

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Polyacrylonitrile (PAN) fiber is an important precursor fiber for high performance carbon fiber.The properties of the final carbon fiber depend strongly on the nature of the PAN fibers.The PAN fibrils were separated successfully from fibers by ultrasonic etching and were systematically investigated by field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM).It is found that in certain ultrasonic etching conditions (at 75±2oC for 6 h with a frequency of 40 kHz) the PAN fibers are dissolved in the 95 wt.% aqueous dimethylsulphoxide (DMSO) solution;the fibrils consisting of numerous periodic lamellae with thickness of 30-45 nm and perpendicular to the fiber axis are separated in the 90 wt.% aqueous DMSO solution;and the fibrils with smooth surface exfoliated from the PAN fibers are obtained in the 70-90 wt.% aqueous DMSO solutions.Inner periodical structure of fibrils was observed in HRTEM,which indicates that there are different densities and two phases in fibrils.The PAN fibers are dissolved layer by layer with increasing ultrasonic etching time.The fiber surface experiences ultrasonic cleaning,selective etching,excessive etching and dissolution,and then the sublayer experiences the same process.There are numerous periodic lamellae in fibrils of nascent fibers.This means that the fibrils with lamellae are formed by orientation and crystallization in shearing field of spinning pipe and drawing stress field of coagulation bath.

  15. Positive and Negative Pulse Etching Method of Porous Silicon Fabrication

    Institute of Scientific and Technical Information of China (English)

    GE Jing; YIN Wen-Jing; LONG Yong-Fu; DING Xun-Min; HOU Xiao-Yuan

    2007-01-01

    We present a new method in which both positive and negative pulses are used to etch silicon for fabrication of porous silicon (PS) monolayer. The optical thickness and morphology of PS monolayer fabricated with different negative pulse voltages are investigated by means of reflectance spectra,scanning electron microscopy and photoluminescence spectra. It is found that with this method the PS monolayer is thicker and more uniform. The micropores also appear to be more regular than those made by common positive pulse etching. This phenomenon is attributed to the vertical etching effect of the PS monolayer being strengthened while lateral etching process is restrained. The explanation we propose is that negative pulse can help the hydrogen cations (H+) in the electrolyte move into the micropores of PS monolayer. These H+ ions combine with the Si atoms on the wall of new-formed micropores, leading to formation of Si-H bonds. The formation of Si-H bonds results in a hole depletion layer near the micropore wall surface,which decreases hole density on the surface,preventing the micropore wall from being eroded laterally by F- anions. Therefore during the positive pulse period the etching reaction occurs exclusively only at the bottom of the micropores where lots of holes are provided by the anode.

  16. Singular Sheet Etching of Graphene with Oxygen Plasma

    Institute of Scientific and Technical Information of China (English)

    Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

    2014-01-01

    This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching (SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition, etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000◦C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

  17. InAs/GaSb超晶格探测器台面工艺研究%Mesa etching process for InAs/GaSb SLs grown by MBE

    Institute of Scientific and Technical Information of China (English)

    姚官生; 张利学; 张向锋; 张亮; 张磊

    2015-01-01

    InAs/GaSb SLs探测器台面刻蚀常用的工艺有干法刻蚀和湿法刻蚀。研究了三种等离子刻蚀气体(Cl2基, Ar基和CH4基)对超晶格的刻蚀效果,SEM结果表明,CH4基组分能够得到更加平整的表面形貌和更少的腐蚀坑;之后采用湿法腐蚀工艺,用于消除干法刻蚀带来的刻蚀损伤,分别研究了酒石酸系和磷酸系两种腐蚀溶液的去损伤效果,结果表明,磷酸系腐蚀液的去损伤效果更好,且腐蚀速率更加稳定。采用优化的台面工艺制备了InAs/GaSb SLs探测器,其I- V特性曲线表明二极管具有较低的暗电流,其77 K时动态阻抗R0A =1.98×104Ωcm2。%Dry etching and wet etching were usually used in the mesa etching process of InAs/GaSb SLs. Three kinds of etch atmosphere (Cl2 based, Ar based and CH4 based)were studied in inductively coupled plasma (ICP) dry etching. The results show that the CH4 based atmosphere give much more smooth surface and less etch pits according to the SEM measurement. Then wet etching was introduced to eliminate the etching damage of ICP dry etching, tartaric acid based etchant and phosphoric acid based etchant, were studied. It was found that the phosphoric acid based etchant gave better result to remove etching damage, and provide a more stable etching rate. InAs/GaSb SLs photodiodes by standard photolithographic procedures were fabricated using this etching recipe. The diodes exhibits a high breakdown voltage and low leakage current, the measurement result reveals a dynamic impedance values of R0A =1.98×104 Ωcm2 at 77 K.

  18. New Conductive Copolymer Membranes via Track-Etched PC Templates for Biological Media Ultra-Filtration

    International Nuclear Information System (INIS)

    Polypyrrole (PPy) membranes proved to be an important device in the fields of ultrafiltration and synthetic membranes. Recently, in our laboratory, we have synthesized new pyrrole and pyrrole-3-carboxylic acid copolymer membranes via track-etched membranes. Commercial polycarbonate (PC) microfiltration membranes are used as template for the membrane synthesis. Moreover, parent membranes present the same structure with parallel and perpendicular micropores. To introduce new properties for pyrrole copolymer membranes, we have chosen to create track-etched polycarbonate films with particular pore orientations. These novel structures were obtained by irradiating at various angles (+30 degree, -30 degree and 0 degree) through both X and Y planes. Resulting new copolymer membranes can be an important device in the fields of complex biological media ultra-filtration. The presence of easily reactive functions can enable the membrane functionalization by immobilising different biological molecules of interest as sugar moieties, peptides, and enzymes for example. Moreover, introduction of pyrrole-3-carboxylic acid on the copolymer allows having access to amide bond which is very stable in biological media. In this way, these membranes were functionalized with different small biological compounds and grafting access was visualized. Moreover, physical properties of these novel grafting membranes were studied in order to show if electronic conductivity and mechanical properties were affected by functionalization

  19. Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gosalvez, M.A.; Foster, A.S.; Nieminen, R.M

    2002-12-30

    Atomistic simulations of anisotropic wet chemical etching of crystalline silicon have been performed in order to determine the dependence of the etch rates of different crystallographic orientations on surface coverage and clustering of OH radicals. We show that the etch rate is a non-monotonic function of OH coverage and that there always exists a coverage value at which the etch rate reaches a maximum. The dependence of the anisotropy of the etching process on coverage, including the dependence of the fastest-etched plane orientation, is implicitly contained in the model and predictions of convex corner under-etching structures are made. We show that the whole etching process is controlled by only a few surface configurations involving a particular type of next-nearest neighbours. The relative value of the removal probabilities of these confitions determines the balance in the occurrence of step propagation and etch pitting for all surface orientations.

  20. ECE laboratory in the Vinca Institute - its basic characteristics and fundamentals of electrochemical etching on polycarbonate

    International Nuclear Information System (INIS)

    This paper deals with the introductory aspects of the Electrochemical Etching Laboratory installed at the VINCA Institute in the year 2003. The main purpose of the laboratory is its field application for radon and thoron large-scale survey using passive radon/thoron UFO type detectors. Since the etching techniques together with the laboratory equipment were transferred from the National Institute of Radiological Sciences, Chiba, Japan, it was necessary for both etching conditions to be confirmed and to be checked up, i. e., bulk etching speeds of chemical etching and electrochemical etching in the VINCA Electrochemical Etching Laboratory itself. Beside this initial step, other concerns were taken into consideration in this preliminary experimental phase such as the following: the measurable energy range of the polycarbonate film, background etch pit density of the film and its standard deviation and reproducibility of the response to alpha particles for different sets of etchings. (author)

  1. Effect of delayed insertion of composite resin on the bond strength of etch-and-rinse adhesive systems

    Directory of Open Access Journals (Sweden)

    Edson Alves CAMPOS

    2009-12-01

    Full Text Available Introduction: Etch-and-rinse adhesive systems are characterized bythe dental acid etching previously to the monomer application. Thesematerials can be classified as 3-step (when primer and bond are applied separately or 2-step (when the primer and bond functions are carried out by a single component. Objective: To determine the influence of immediate or delayed insertion of restorative material on the values of bond strength of 2-step and 3-step etch-and-rinse adhesive systems using the microtensile test. Material and methods: Bovine incisors were used, which had its vestibular surface abraded to obtain a flat dentin surface. 3-step (Scotchbond Multi-Purpose – SMP; Optibond FL – OFL; Bond-It – BIT and 2-step (Single-Bond – SB; Optibond Solo Plus – OSP; Bond-1 – B1 etch-and-rinse adhesive systems were used, and composite resin (Z-350 was adhered to this substrate at two different times: immediately and later (after 24 hours. Procedures were performed with simulated physiological pulpal pressure. Results were submitted to statistical analysis through Anova and Tukey’s test (p < 0.05. Results: When the composite resin was immediately inserted all the adhesive systems showed similar results. 3-step adhesive systems did not show reduction in bond strength values related to delayed insertion of composite. On the other hand, 2-step adhesive systems showed significant reduction in the values of bond strength. Reduction was around 30.24% to SB, 27.19% to OSP and 28.21% to B1. Conclusion: 2-step etch-and-rinse adhesive systems should be used very carefully. It is advisable to insert and polymerize the composite resin immediately after the conclusion of adhesive procedure.

  2. Selective Plasma Etching of Polymeric Substrates for Advanced Applications

    Directory of Open Access Journals (Sweden)

    Harinarayanan Puliyalil

    2016-06-01

    Full Text Available In today’s nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a “zoo” of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance.

  3. Surface Modification of Nitinol by Chemical and Electrochemical Etching

    Science.gov (United States)

    Yang, Zhendi; Wei, Xiaojin; Cao, Peng; Gao, Wei

    2013-07-01

    In this paper, Nitinol, an equiatomic binary alloy of nickel and titanium, was surface modified for its potential biomedical applications by chemical and electrochemical etching. The main objective of the surface modification is to reduce the nickel content on the surface of Nitinol and simultaneously to a rough surface microstructure. As a result, better biocompatibility and better cell attachment would be achieved. The effect of the etching parameters was investigated, using scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectrometry (EDX) and X-ray photoelectron spectrometry (XPS). The corrosion property of modified Nitinol surfaces was investigated by electrochemical work station. After etching, the Ni content in the surface layer has been reduced and the oxidation of Ti has been enhanced.

  4. Novel diamantane polymer platform for enhanced etch resistance

    Science.gov (United States)

    Padmanaban, Munirathna; Chakrapani, Srinivasan; Lin, Guanyang; Kudo, Takanori; Parthasarathy, Deepa; Rahman, Dalil; Anyadiegwu, Clement; Antonio, Charito; Dammel, Ralph R.; Liu, Shenggao; Lam, Frederick; Waitz, Anthony; Yamagchi, Masao; Maehara, Takayuki

    2007-03-01

    The dominant current 193 nm photoresist platform is based on adamantane derivatives. This paper reports on the use of derivatives of diamantane, the next higher homolog of adamantane, in the diamondoid series, as monomers in photoresists. Due to their low Ohnishi number and incremental structural parameter (ISP), such molecules are expected to enhance dry etch stability when incorporated into polymers for resist applications. Starting from the diamantane parent, cleavable and non-cleavable acrylate/methacrylate derivatives of diamantane were obtained using similar chemical steps as for adamantane derivatization. This paper reports on the lithographic and etch performance obtained with a number of diamantane-containing monomers, such as 9-hydroxy-4-diamantyl methacrylate (HDiMA), 2-ethyl-2- diamantyl methacrylate (EDiMA), and 2-methyl-2-diamantyl methacrylate (MDiMA). The etch advantage, dry and wet lithographic performance of some of the polymers obtained from these diamantane-containing polymers are discussed.

  5. High density plasma via hole etching in SiC

    International Nuclear Information System (INIS)

    Throughwafer vias up to 100 μm deep were formed in 4H-SiC substrates by inductively coupled plasma etching with SF6/O2 at a controlled rate of ∼0.6 μm min-1 and use of Al masks. Selectivities of >50 for SiC over Al were achieved. Electrical (capacitance-voltage: current-voltage) and chemical (Auger electron spectroscopy) analysis techniques showed that the etching produced only minor changes in reverse breakdown voltage, Schottky barrier height, and near surface stoichiometry of the SiC and had high selectivity over common frontside metallization. The SiC etch rate was a strong function of the incident ion energy during plasma exposure. This process is attractive for power SiC transistors intended for high current, high temperature applications and also for SiC micromachining

  6. Luminescent porous silicon prepared by reactive ion etching

    International Nuclear Information System (INIS)

    Realization of luminescent porous silicon structures by a sequential reactive ion etching is reported. The process is composed of one etching and two passivation subsequences. The impact of substrate resistivity, plasma power and the duration of the etching subsequence on the porosity and thickness of the fabricated porous silicon layer are investigated, as are the roles of two passivation subsequences. The porous silicon layer shows stable photoluminescence in the blue portion of the spectrum. Luminescence stability is due to the stable passivating oxyfluoride layer formed in the two passivation subsequences. Formation of the stable passivating layer is due to the controlled oxidation of the porous silicon surface and the passivation of the dangling bonds in the fluorination subsequence. Since the fabrication process is performed at room temperature, it can be used as a post-fabrication treatment to integrate light-emitting structures with microelectronic circuits. (paper)

  7. Etched track radiometers in radon measurements: a review

    CERN Document Server

    Nikolaev, V A

    1999-01-01

    Passive radon radiometers, based on alpha particle etched track detectors, are very attractive for the assessment of radon exposure. The present review considers various devices used for measurement of the volume activity of radon isotopes and their daughters and determination of equilibrium coefficients. Such devices can be classified into 8 groups: (i) open or 'bare' detectors, (ii) open chambers, (iii) sup 2 sup 2 sup 2 Rn chambers with an inlet filter, (iv) advanced sup 2 sup 2 sup 2 Rn radiometers, (v) multipurpose radiometers, (vi) radiometers based on a combination of etched track detectors and an electrostatic field, (vii) radiometers based on etched track detectors and activated charcoal and (viii) devices for the measurement of radon isotopes and/or radon daughters by means of track parameter measurements. Some of them such as the open detector and the chamber with an inlet filter have a variety of modifications and are applied widely both in geophysical research and radon dosimetric surveys. At the...

  8. Profile etching for prefiguring X-ray mirrors.

    Science.gov (United States)

    Liu, Chian; Qian, Jun; Assoufid, Lahsen

    2015-03-01

    A method to pre-shape mirror substrates through etching with a broad-beam ion source and a contoured mask is presented. A 100 mm-long elliptical cylinder substrate was obtained from a super-polished flat Si substrate with a 48 nm root-mean-square (r.m.s.) figure error and a 1.5 Å r.m.s. roughness after one profile-etching process at a beam voltage of 600 V without iteration. A follow-up profile coating can be used to achieve a final mirror. Profile etching and profile coating combined provide an economic way to make X-ray optics, such as nested Kirkpatrick-Baez mirrors.

  9. Effect of SF6 flow rate on the etched surface profile and bottom grass formation in deep reactive ion etching process

    International Nuclear Information System (INIS)

    While deep reactive ion etching (DRIE) has proven to be a boon for silicon micromachining applications, certain factors still exist which affect the satisfactory performance of DRIE. Some of the process limitations include bottom grass formation, RIE lag, loading and notching effects and aspect ratio dependent etching. This paper presents the effect of SF6 flow rate and etching/passivation cycle time on the etched shape profile and bottom grass formation. Rectangular trenches of varying widths are etched using Alcatel etching system. Critical DRIE process parameters, such as SF6 flow rate and ratio of etching and passivation cycle time, are varied to explore the dependence of etched shape profile on these parameters. It is found that low SF6 flow rate, i.e. 250 sccm, results in relatively smooth bottom surface. As SF6 flow rate is increased, bottom surface roughness increases and grass forms on the bottom of etched trenches. Shape of etched surface profile was found to be changed from positive profile to negative profile, when the SF6 flow rate was increased. Ratio of etching/passivation cycle was also found to be critical for prevention of bottom grass formation. DRIE process parameters were optimised to get smooth and vertical sidewalls

  10. Optimization of nanopores obtained by chemical etching on swift-ion irradiated lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Crespillo, M.L.; Otto, M.; Munoz-Martin, A. [Centro de Microanalisis de Materiales (CMAM), Universidad Autonoma de Madrid (UAM), Cantoblanco, E-28049 Madrid (Spain); Olivares, J. [Centro de Microanalisis de Materiales (CMAM), Universidad Autonoma de Madrid (UAM), Cantoblanco, E-28049 Madrid (Spain); Instituto de Optica, CSIC, C/Serrano 121, E-28006 Madrid (Spain)], E-mail: j.olivares@io.cfmac.csic.es; Agullo-Lopez, F. [Centro de Microanalisis de Materiales (CMAM), Universidad Autonoma de Madrid (UAM), Cantoblanco, E-28049 Madrid (Spain); Departamento de Fisica de Materiales, Universidad Autonoma de Madrid (UAM) Cantoblanco, 28049 Madrid (Spain); Seibt, M. [IV. Physikalisches Institut, Universitaet Goettingen, Institut fuer Halbleiterphysik, Tammannstr. 1, D-37077 Goettingen (Germany); Toulemonde, M. [Centre Interdisciplinaire de Recherche Ions-Lasers, UMR 11 CEA-CNRS, 14040 Caen Cedex (France); Trautmann, C. [Gesellschaft fuer Schwerionenforschung (GSI), Materialforschung, Planckstrasse 1, 64291 Darmstadt (Germany)

    2009-03-15

    The morphology of the nanopores obtained by chemical etching on ion-beam irradiated LiNbO{sub 3} has been investigated for a variety of ions (F, Br, Kr, Cu, Pb), energies (up to 2300 MeV), and stopping powers (up to 35 keV/nm) in the electronic energy loss regime. The role of etching time and etching agent on the pore morphology, diameter, depth, and shape has also been studied. The transversal and depth profiles of the pore have been found to be quite sensitive to both irradiation and etching parameters. Moreover, two etching regimes with different morphologies and etching rates have been identified.

  11. Synchrotron radiation-excited etching of ZnTe using Ar gas

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Tooru [Synchrotron Light Application Center, Saga University, 1 Honjyo, Saga 840-8502 (Japan)]. E-mail: ttanaka@cc.saga-u.ac.jp; Kume, Yusuke [Synchrotron Light Application Center, Saga University, 1 Honjyo, Saga 840-8502 (Japan); Hayashida, Kazuki [Venture Business Laboratory, Saga University, 1 Honjyo, Saga 840-8502 (Japan); Saito, Katsuhiko [Venture Business Laboratory, Saga University, 1 Honjyo, Saga 840-8502 (Japan); Nishio, Mitsuhiro [Department of Electrical and Electronic Engineering, Saga University, 1 Honjyo, Saga 840-8502 (Japan); Guo, Qixin [Department of Electrical and Electronic Engineering, Saga University, 1 Honjyo, Saga 840-8502 (Japan); Ogawa, Hiroshi [Synchrotron Light Application Center, Saga University, 1 Honjyo, Saga 840-8502 (Japan)

    2005-08-15

    Dependence of the synchrotron light-excited etching of ZnTe on the pressure has been investigated. Ar gas was used as an etching gas, and the ZnTe sample was negatively biased against the reaction chamber. The etching rate increases with increasing the pressure, and the maximum etching rate of 16.7 nm/A min has been achieved. In order to discuss the etching mechanism, the wavelength dependence of the etching properties was examined using a LiF window.

  12. Improvement of Porous GaAs (100 Structure through Electrochemical Etching Based on DMF Solution

    Directory of Open Access Journals (Sweden)

    Muhamad Ikram Md Taib

    2014-01-01

    Full Text Available We report on the fabrication of porous GaAs (100 using three different acids, H2SO4, HF, and HCl, diluted in DMF based solutions. The mixture of H2SO4 with DMF showed the best porous structures in comparison to other acids. The concentration of the DMF solution was then varied for a fixed concentration of H2SO4. It was apparent that the different concentration of the DMF solvent gave different types of morphology of the porous GaAs. Furthermore, a higher current density improved the uniformity of the pores distribution. The best porous GaAs exhibited well-defined circular shaped pores with high uniformity. To the best of our knowledge, such structure produced in such manner has never been reported so far. Finally, the optimum etching conditions of the pores were proposed.

  13. New conductive copolymer membranes via track-etched PC templates for biological media ultra-filtration

    International Nuclear Information System (INIS)

    New microstructurated copolymer membranes have been synthesized using a track-etched polycarbonate (PC) matrix. These membranes proved to be an important device in the field of ultra-filtration and synthetic membranes. These novel structures were obtained by irradiating at various angles (+30o, -30o). Such architecture is expected to improve not only the exchange properties but also, the behaviour under high flow pressure during their use as nanofiltration membranes. Membrane functionalization was performed with an amino acid as a simple biological model. Transmission and ATR-FTIR spectroscopies show that the doping state of copolymer dramatically influences the amino acid coupling rate. UV-vis spectroscopy indicates that the copolymer may be self-doped

  14. Biological functionalization and patterning of porous silicon prepared by Pt-assisted chemical etching

    International Nuclear Information System (INIS)

    Porous silicon fabricated via Pt-assisted chemical etching of p-type Si (1 0 0) in 1:1:1 EtOH/HF/H2O2 solution possesses a longer durability in air and in aqueous media than anodized one, which is advantageous for biomedical applications. Its surface SiHx (x = 1 and 2) species can react with 10-undecylenic acid completely under microwave irradiation, and subsequent derivatizations of the end carboxylic acid result in affinity capture of proteins. We applied two approaches to produce protein microarrays: photolithography and spotting. The former provides a homogeneous microarray with a very low fluorescence background, while the latter presents an inhomogeneous microarray with a high noise background.

  15. Synthesis and chemical etching of Te/C nanocables

    Indian Academy of Sciences (India)

    Guang Sheng Cao; Yong Gang Liu; Wen Wu Yang; Chang Tan; Hui Li; Xiao Juan Zhang

    2011-10-01

    In this paper, Te/C nanocables were fabricated by a hydrothermal method in the presence of cetyltrimethylammonium bromide (CTAB). The products were characterized in detail by multiform techniques: transmission electron microscopy, X-ray diffraction, energy-dispersive X-ray analysis and Fourier transform infrared (FTIR) spectroscopy. The results showed that the products were nanocables with lengths of several microns, core about 20 nm in diameter, and a surrounding sheath of about 60–80 nm in thickness. Te/C nanocables were tailored freely by chemical etching. Carbonaceous nanotubes and Te/C nanocables with fragmentary Te core were obtained by adjusting time of chemical etching.

  16. Study of reactive ion etching for reverse tone nanoimprint process

    Energy Technology Data Exchange (ETDEWEB)

    Tsuji, Y; Yanagisawa, M; Yoshinaga, H; Hiratsuka, K, E-mail: tsuji-yukihiro@sei.co.j [Fiber-optics Core Devices R and D Department, Transmission Devices R and D Laboratories, Sumitomo Electric Industries, LTD. 1, Taya-cho, Sakae-ku, Yokohama, Kanagawa, 244-8588 (Japan)

    2009-11-15

    We have used reverse nanoimprint for fabricating diffraction gratings of distributed feedback laser diodes. Generation of residues in the etching process of resin is a serious issue leading to poor line edge roughness of the grating patterns. We have found that the residues are composed of oxide products from Si-containing resin. We have successfully suppressed the generation of the residues by optimizing oxygen partial pressure of reactive ion etching (RIE). We have also succeeded in effectively removing the residues by utilizing sputtering effect of RIE.

  17. Effect of Saliva Contamination on Shear Bond Strength of Orthodontic Brackets When Using a Self-Etch Primer

    Institute of Scientific and Technical Information of China (English)

    MAO Jing; QI Juan

    2005-01-01

    The effect of saliva contamination on the shear bond strength of orthodontic brackets, at various stages of the bonding procedure using a new self-etch primer was studied. The samples were divided into 4 groups according to 4 different enamel surface conditions: Group A: dry; Group B: saliva contamination before priming; Group C: saliva contamination after priming, and Group D: saliva contamination before and after priming. Stainless steel brackets were bonded in each test group with a light-cured composite resin (TransbondXT 3M). The shear bond strength was determined in the first 30 min after bonding. The analysis of variance indicated that the shear bond strengths of the 4 groups were significantly different (F= 11.89, P<0.05). Tukey HSD tests indicated that contamination both before and after the application of the acid-etch primer resulted in a significantly lower (=4.6± 1.7 MPa) shear bond strength than either the control group (= 8.8±1.9 MPa) or the groups where contamination occurred either before ( = 7.9± 2.0 MPa) or after (=6.9±1.5 MPa) the application of the primer. It was concluded that the new acid-etch primer could maintain adequate shear bond strength if contamination occurred either before or after the application of the primer. On the other hand, contamination both before and after the application of the primer could significantly reduce the shear bond strength of orthodontic brackets.

  18. Functionalized Nanoporous Track-Etched b-PVDF Membrane Electrodes for Heavy Metal Determination by Square-Wave Anodic Stripping Voltammetry

    Directory of Open Access Journals (Sweden)

    Bessbousse H.

    2013-04-01

    Full Text Available Track-etched functionalized nanoporous β-PVDF membrane electrodes, or functionalized membrane electrodes (FMEs, are electrodes made from track-etched, poly(acrylic acid (PAA functionalized nanoporous β-poly(vinylidene fluoride (β-PVDF membranes with thin porous Au films sputtered on each side as electrodes. To form the β-PVDF nanoporous membranes, β-PVDF films are irradiated by swift heavy ions. After irradiation, radical tracks are stable in the membranes. Chemical etching removes some of the radical tracks revealing nanopores. Radicals, remaining in the pores, initiate radio grafting of PAA from the pore walls of the nanoporous β-PVDF. PAA is a cation exchange polymer that adsorbs metal ions, such as Pb2+, from aqueous solutions thus concentrating the ions into the membrane. After a calibrated time the FME is transferred to an electrochemical cell for square-wave anodic stripping voltammetry analysis.

  19. Cross-Sectional Conductive Atomic Force Microscopy of CdTe/CdS Solar Cells: Effects of Etching and Back-Contact Processes; Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Moutinho, H. R.; Dhere, R. G.; Jiang, C.-S.; Gessert, T. A.; Duda, A. M.; Young, M.; Metzger, W. K.; Li, X.; Al-Jassim, M. M.

    2006-05-01

    We investigated the effects of the etching processes using bromine and nitric-phosphoric acid solutions, as well as of Cu, in the bulk electrical conductivity of CdTe/CdS solar cells using conductive atomic force microscopy (C-AFM). Although the etching process can create a conductive layer on the surface of the CdTe, the layer is very shallow. In contrast, the addition of a thin layer of Cu to the surface creates a conductive layer inside the CdTe that is not uniform in depth, is concentrated at grains boundaries, and may short circuit the device if the CdTe is too thin. The etching process facilitates the Cu diffusion and results in thicker conductive layers. The existence of this inhomogeneous conductive layer directly affects the current transport and is probably the reason for needing thick CdTe in these devices.

  20. Realization of Ultraflat Plastic Film Using Dressed-Photon-Phonon-Assisted Selective Etching of Nanoscale Structures

    Directory of Open Access Journals (Sweden)

    Takashi Yatsui

    2015-01-01

    Full Text Available We compared dressed-photon-phonon (DPP etching to conventional photochemical etching and, using a numerical analysis of topographic images of the resultant etched polymethyl methacrylate (PMMA substrate, we determined that the DPP etching resulted in the selective etching of smaller scale structures in comparison with the conventional photochemical etching. We investigated the wavelength dependence of the PMMA substrate etching using an O2 gas. As the dissociation energy of O2 is 5.12 eV, we applied a continuous-wave (CW He-Cd laser (λ= 325 nm, 3.81 eV for the DPP etching and a 5th-harmonic Nd:YAG laser (λ= 213 nm, 5.82 eV for the conventional photochemical etching. From the obtained atomic force microscope images, we confirmed a reduction in surface roughness, Ra, in both cases. However, based on calculations involving the standard deviation of the height difference function, we confirmed that the conventional photochemical etching method etched the larger scale structures only, while the DPP etching process selectively etched the smaller scale features.

  1. The oxidation of PET track-etched membranes by hydrogen peroxide as an effective method to increase efficiency of UV-induced graft polymerization

    OpenAIRE

    Il'ya Korolkov; Abzal Taltenov; Anastassiya Mashentseva; Olgun Guven

    2015-01-01

    In this article, we report on functionalization of track-etched membrane based on poly(ethylene terephthalate) (PET TeMs) oxidized by advanced oxidation systems and by grafting of acrylic acid using photochemical initiation technique for the purpose of increasing functionality thus expanding its practical application. Among advanced oxidation processes (H2O2/UV) system had been chosen to introduce maximum concentration of carboxylic acid groups. Benzophenone (BP) photo-initiator was first im...

  2. Influence of the anodic etching current density on the morphology of the porous SiC layer

    Directory of Open Access Journals (Sweden)

    Anh Tuan Cao

    2014-03-01

    Full Text Available In this report, we fabricated a porous layer in amorphous SiC thin films by using constant-current anodic etching in an electrolyte of aqueous diluted hydrofluoric acid. The morphology of the porous amorphous SiC layer changed as the anodic current density changed: At low current density, the porous layer had a low pore density and consisted of small pores that branched downward. At moderate current density, the pore size and depth increased, and the pores grew perpendicular to the surface, creating a columnar pore structure. At high current density, the porous structure remained perpendicular, the pore size increased, and the pore depth decreased. We explained the changes in pore size and depth at high current density by the growth of a silicon oxide layer during etching at the tips of the pores.

  3. Growth, etching, and stability of sputtered ZnO:Al for thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Owen, Jorj Ian

    2011-07-01

    Aluminum-doped zinc oxide (ZnO:Al) can fulfill many requirements in thin-film solar cells, acting as (1) a transparent contact through which the incident light is transmitted, (2) part of the back reflector, and (3) a source of light scattering. Magnetron sputtered ZnO:Al thin-films are highly transparent, conductive, and are typically texturized by post-deposition etching in a dilute hydrochloric acid (HCl) solution to achieve light scattering. The ZnO:Al thin-film electronic and optical properties, as well as the surface texture after etching, depend on the deposition conditions and the post-deposition treatments. Despite having been used in thin-film solar cells for more than a decade, many aspects regarding the growth, effects of heat treatments, environmental stability, and etching of sputtered ZnO:Al are not fully understood. This work endeavors to further the understanding of ZnO:Al for the purpose improving silicon thin-film solar cell efficiency and reducing ZnO:Al production costs. With regard to the growth of ZnO:Al, the influence of various deposition conditions on the resultant electrical and structural properties and their evolution with film thickness were studied. The surface electrical properties extracted from a multilayer model show that while carrier concentration of the surface layer saturates already at film thickness of 100 nm, the surface mobility continues to increases with film thickness, and it is concluded that electronic transport across grain boundaries limits mobility in ZnO:Al thin films. ZnO:Al deposited onto a previously etched ZnO:Al surface grows epitaxially, preserving both the original orientation and grain structure. Further, it is determined that a typical ZnO:Al used in thin-film silicon solar cells grows Zn-terminated on glass substrates. Concerning the affects of heat treatments and stability, it is demonstrated that a layer of amorphous silicon can protect ZnO:Al from degradation during annealing, and the mobility of Zn

  4. Shear Bond Strength of Saliva Contaminated and Re-etched All-in-One Adhesive to Enamel

    Directory of Open Access Journals (Sweden)

    M. Khoroushi

    2008-12-01

    Full Text Available Objective: The aim of this study was to investigate the effect of phosphoric acid re-etching of an enamel surface treated via a one-bottle adhesive system on shear bond strength between resin composite and the enamelsurface in different stages of adhesive application.Materials and Methods: Extracted intact premolars (n=84 were divided into sevengroups (n=12. In the control group 1, the adhesive i-Bond was used according to the manufacturer's instructions, with nocontamination. In groups 2 to 4, the conditioned and saliva, contaminated enamel was blot dried only, rinsed,and blot dried, rinsed blot dried and re-etched, respectively. In groups 5, 6and 7 cured adhesive was contaminated with saliva and then rinsed and blot-dried, blot dried only and rinsed, blot-dried and re-etched respectively. In groups 3, 4, 6 and 7 the adhesive was reapplied. Afterward, Z100 compos-ite cylinders were bonded to the enamel surfaces. The samples were thermocycled (5°C and 55°C, 30 s, dwelling time: 10 s, 500 cycles. Finally, the samples were sheared using Dartec testing machine and shear bond strength data were subjected to one-way ANOVA analysis and Tukey's HSD test.Results: There were statistically significant differences among groups 1 and 5-7. The samples in groups 1 and 4 demonstrated higher bond strengths than those in the other groups.Conclusion: Using phosphoric acid etching may be effective, only where contamination occurs prior to curing of the adhesive. After curing of the adhesive, none of the methods in this study would be preferred.

  5. Correlation between the cytotoxicity of self-etching resin cements and the degree of conversion

    Directory of Open Access Journals (Sweden)

    Luís FSA Morgan

    2015-01-01

    Conclusion: These results indicate that photopolymerization of dual cure self-etching resin cements decrease toxic effects on cell culture. Adequate photopolymerization should be considered during cementation when using dual polymerization self-etching resin cements.

  6. Plasma Etching for Failure Analysis of Integrated Circuit Packages

    NARCIS (Netherlands)

    Tang, J.; Schelen, J.B.J.; Beenakker, C.I.M.

    2011-01-01

    Plastic integrated circuit packages with copper wire bonds are decapsulated by a Microwave Induced Plasma system. Improvements on microwave coupling of the system are achieved by frequency tuning and antenna modification. Plasmas with a mixture of O2 and CF4 showed a high etching rate around 2 mm3/m

  7. Personnel neutron dosimetry using electrochemically etched CR-39 foils

    International Nuclear Information System (INIS)

    A personnel neutron dosimetry system has been developed based on the electrochemical etching of CR-39 plastic at elevated temperatures. The doses obtained using this dosimeter system are more accurate than those obtained using other dosimetry systems, especially when varied neutron spectra are encountered. This Cr-39 dosimetry system does not have the severe energy dependence that exists with albedo neutron dosimeters or the fading and reading problems encountered with NTA film. The dosimetry system employs an electrochemical etch procedure that be used to process large numbers of Cr-39 dosimeters. The etch procedure is suitable for operations where the number of personnel requires that many CR-39 dosimeters be processed. Experience shows that one full-time technician can etch and evaluate 2000 foils per month. The energy response to neutrons is fairly flat from about 80 keV to 3.5 MeV, but drops by about a factor of three in the 13 to 16 MeV range. The sensitivity of the dosimetry system is about 7 tracks/cm2/mrem, with a background equivalent to about 8 mrem for new CR-39 foils. The limit of sensitivity is approximately 10 mrem. The dosimeter has a significant variation in directional dependence, dropping to about 20% at 900. This dosimeter has been used for personnel neutron dosimetry at the Lawrence Livermore National Laboratory for more tha 18 months. 6 refs., 23 figs., 2 tabs

  8. Plasma-etched nanostructures for optical applications (Presentation Recording)

    Science.gov (United States)

    Schulz, Ulrike; Rickelt, Friedrich; Munzert, Peter; Kaiser, Norbert

    2015-08-01

    A basic requirement for many optical applications is the reduction of Fresnel-reflections. Besides of interference coatings, nanostructures with sub-wavelength size as known from the eye of the night-flying moth can provide antireflective (AR) properties. The basic principle is to mix a material with air on a sub-wavelength scale to decrease the effective refractive index. To realize AR nanostructures on polymers, the self-organized formation of stochastically arranged antireflective structures using a low-pressure plasma etching process was studied. An advanced procedure involves the use of additional deposition of a thin oxide layer prior etching. A broad range of different structure morphologies exhibiting antireflective properties can be generated on almost all types of polymeric materials. For applications on glass, organic films are used as a transfer medium. Organic layers as thin film materials were evaluated to identify compounds suitable for forming nanostructures by plasma etching. The vapor deposition and etching of organic layers on glass offers a new possibility to achieve antireflective properties in a broad spectral range and for a wide range of light incidence.

  9. Electrochemical etching of sharp tips for STM reveals singularity

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Oddershede, Lene

    2002-01-01

    Electrochemical etching of metal wires is widely used to produce atomically sharp tips for use in scanning tunneling microscopy (STM). In this letter we uncover the existence of a finite-time singularity in the process: Several of the physical parameters describing the system exhibit scaling...

  10. Preparation of etched tantalum semimicro capacitor stimulation electrodes.

    Science.gov (United States)

    Robblee, L S; Kelliher, E M; Langmuir, M E; Vartanian, H; McHardy, J

    1983-03-01

    The ideal electrode for stimulation of the nervous system is one that will inject charge by purely capacitive processes. One approach is to exploit the type of metal-oxide combination used in electrolytic capacitors, e.g., Ta/Ta2O5. For this purpose, fine tantalum wire (0.25 mm diam) was etched electrolytically at constant current in a methanol solution of NH4Br containing 1.5 wt % H2O. Electrolytic etching produced a conical tip with a length of ca. 0.5 mm and shaft diameters ranging from 0.10 to 0.16 mm. The etched electrodes were anodized to 10 V (vs. SCE) in 0.1 vol % H3PO4. The capacitance values normalized to geometric area of etched electrodes ranged from 0.13 to 0.33 micro F mm-2. Comparison of these values to the capacitance of "smooth" tantalum anodized to 10 V (0.011 micro F mm-2) indicated that the degree of surface enhancement, or etch ratio, was 12-30. The surface roughness was confirmed by scanning electron microscopy studies which revealed an intricate array of irregularly shaped surface projections about 1-2 micrometers wide. The etched electrodes were capable of delivering 0.06-0.1 micro C of charge with 0.1 ms pulses at a pulse repetition rate of 400 Hz when operated at 50% of the anodization voltage. This quantity of charge corresponded to volumetric charge densities of 20-30 micro C mm-3 and area charge densities of 0.55-0.88 micro C mm-2. Charge storage was proportionately higher at higher fractional values of the formation voltage. Leakage currents at 5 V were ca. 2 nA. Neither long-term passive storage (1500 h) nor extended pulsing time (18 h) had a deleterious effect on electrode performance. The trend in electrical stimulation work is toward smaller electrodes. The procedures developed in this study should be particularly well-suited to the fabrication of even smaller electrodes because of the favorable electrical and geometric characteristics of the etched surface. PMID:6841372

  11. GaAs backside via-hole etching using ICP system

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A high etch rate GaAs via-hole process was studied in an inductively coupled plasma system using Cl2/BCl3 gas system. The effects of process parameters on the GaAs etch rate were investigated. The influences of photoresist SiO2 and Ni masks on the resultant profiles were also studied by scanning electron microscopy. A maximum etch rate of 8.9 μm/min was obtained and the etched profiles were optimized.

  12. Ion beam etching system for mercury cadmium telluride and III-V compound semiconductors

    International Nuclear Information System (INIS)

    This paper describes a laboratory built ion beam etching system and its performance when used for etching Hg1-xCdxTe, GaAs and InP. The etching system provides a means for forming device mesas on a wide range of semiconductors without having to resort to wet chemical etches. The system uses a Kaufmann ion source, a rotating platform and two flow controllers to allow the variation of gas ratios and flows

  13. Influence of dentin and enamel pretreatment with acidic sulfur compounds on adhesive performance

    OpenAIRE

    Ioannidis, Alexis; Stawarczyk, Bogna; Sener, Beatrice; Attin, Thomas; Schmidlin, Patrick R

    2013-01-01

    OBJECTIVE: This study tested the potential hampering effects of acidic sulfur compounds (ASC) containing hydroxybenzene sulfonic acid, hydroxymethoxybenzene sulfonic acid, and sulfuric acid, prior to self-etch and etch-and-rinse bonding procedures on enamel and dentin. According to the manufacturer, ASC should be applied after cavity preparation and prior to application of a primer in order to reduce the remaining biofilm in the preparation cavity. Despite promoted marketing, data on the inve...

  14. Laser desorption/ionization mass spectrometry of lipids using etched silver substrates.

    Science.gov (United States)

    Schnapp, Andreas; Niehoff, Ann-Christin; Koch, Annika; Dreisewerd, Klaus

    2016-07-15

    Silver-assisted laser desorption/ionization mass spectrometry can be used for the analysis of small molecules. For example, adduct formation with silver cations enables the molecular analysis of long-chain hydrocarbons, which are difficult to ionize via conventional matrix-assisted laser desorption ionization (MALDI). Here we used highly porous silver foils, produced by etching with nitric acid, as sample substrates for LDI mass spectrometry. As model system for the analysis of complex lipid mixtures, cuticular extracts of fruit flies (Drosophila melanogaster) and worker bees (Apis mellifera) were investigated. The mass spectra obtained by spotting extract onto the etched silver substrates demonstrate the sensitive detection of numerous lipid classes such as long-chain saturated and unsaturated hydrocarbons, fatty acyl alcohols, wax esters, and triacylglycerols. MS imaging of cuticular surfaces with a lateral resolution of a few tens of micrometers became possible after blotting, i.e., after transferring lipids by physical contact with the substrate. The examples of pheromone-producing male hindwings of the squinting bush brown butterfly (Bicyclus anynana) and a fingermark are shown. Because the substrates are also easy to produce, they provide a viable alternative to colloidal silver nanoparticles and other so far described silver substrates. PMID:26827933

  15. Antireflective nanostructures fabricated by reactive ion etching method on pyramid-structured silicon surface

    International Nuclear Information System (INIS)

    In this paper, pyramid-structured silicon wafers were etched in a reactive ion etching system at room temperature and without any negative voltage pulses to obtain antireflective nanostructures. The effects of the etching time, etching power and the flow ratio of the SF6 and O2 (FSF6/FO2) on the morphologies and reflective properties of the etched samples were studied. Scanning electron microscope was used to investigate the morphologies of etched samples. The surface reflectance measurements were carried out using UV–vis-NIR spectrophotometer. A reflectance of 4.72% from the etched surface in the wavelength range of 400–800 nm was obtained under etching time of 20 min, etching power of 150 W and FSF6/FO2 of 18 sccm/6 sccm. Meanwhile, samples etched with FO2 lower than 6 sccm can’t get low reflective silicon structure. Besides, the results show that overlong etching time of 30 min and too big etching power of 225 W would make the nanostructures too sparse to obtain a low reflectance.

  16. Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches

    Science.gov (United States)

    Benson, J. David; Stoltz, Andrew J., Jr.; Kaleczyc, Andrew W.; Martinka, Mike; Almeida, Leo A.; Boyd, Phillip R.; Dinan, John H.

    2002-12-01

    Factors that affect width and aspect ratio in electron cyclotron resonance (ECR) etched HgCdTe trenches are investigated. The ECR etch bias and anisotropy are determined by photoresist feature erosion rate. The physical characteristics of the trenches are attributed to ECR plasma etch chemistry.

  17. Experimental investigation of photoresist etching by kHz AC atmospheric pressure plasma jet

    Science.gov (United States)

    Wang, Lijun; Zheng, Yashuang; Wu, Chen; Jia, Shenli

    2016-11-01

    In this study, the mechanism of the photoresist (PR) etching by means of a kHz AC atmospheric pressure plasma jet (APPJ) is investigated. The scanning electron (SEM) and the polarizing microscope are used to perform the surface analysis, and the mechanical profilometry is applied to diagnose the etch rate. The results show that granulated structure with numerous microparticles appears at the substrate surface after APPJ treatment, and the etch rate in the etch center is the fastest and gradually slows down to the edge of etch region. In addition, the pin-ring electrode APPJ has the highest etch rate at but easy to damage the Si wafer, the double-ring APPJ is the most stable but requires long time to achieve the ideal etch result, and the etch rate and the etch result of the multi-electrode APPJ fall in between. Ar APPJ had much higher PR etch rate and more irregular etch trace than He APPJ. It is speculated that Ar APPJ is more energetic and effective in transferring reactive species to the PR surface. It is also observed that the effective etch area initially increases and then decreases as plasma jet outlet to the PR surface distance increases.

  18. Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

    Science.gov (United States)

    Matsutani, Akihiro; Ishiwari, Fumitaka; Shoji, Yoshiaki; Kajitani, Takashi; Uehara, Takuya; Nakagawa, Masaru; Fukushima, Takanori

    2016-06-01

    We report the etching properties of tripodal paraffinic triptycene (TripC12) used as a thermal nanoimprint lithography (TNIL) resist mask in Cl2 plasma etching. Using thermally nanoimprinted TripC12 films, we achieved microfabrication of a GaAs substrate by Cl2-based inductively coupled plasma (ICP) etching. Attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy confirmed that the chemical structure of TripC12 remains intact after the ICP etching process using Cl2. We believe that TNIL using TripC12 films is useful for fabricating optical/electrical devices and micro-electro-mechanical systems (MEMSs).

  19. Inductive couple plasma reactive ion etching characteristics of TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Garay, Adrian Adalberto; Hwang, Su Min; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Changes in the inductively coupled plasma reactive ion etching characteristics of TiO{sub 2} thin films in response to the addition of HBr, Cl{sub 2} and C{sub 2}F{sub 6} to Ar gas were investigated. As the HBr, Cl{sub 2} and C{sub 2}F{sub 6} concentration increased, the etch rate increased; however, the etch profile degree of anisotropy followed a different trend. As HBr concentration increased, the greatest anisotropic etch profile was obtained at 100% HBr, while the greatest anisotropic etch profile was obtained at concentrations of 25% when etching was conducted under C{sub 2}F{sub 6} and Cl{sub 2}. Field emission scanning electron microscopy revealed that 25% C{sub 2}F{sub 6} generated the greatest vertical etch profile; hence, etch parameters were varied at this concentration. The effects of rf power, dc-bias voltage and gas pressure on the etch rate and etch profile were also investigated. The etch rate and degree of anisotropy in the etch profile increased with increasing rf power and dc-bias voltage and decreasing gas pressure. X-ray photoelectron spectroscopy analysis of the films etched under a C{sub 2}F{sub 6}/Ar gas mixture revealed the existence of etch byproducts containing F (i.e. TiF{sub x}) over the film. C{sub x}F{sub y} compounds were not detected on the film surface, probably due to contamination with atmospheric carbon. - Highlights: • Reactive ion etching of TiO{sub 2} films under HBr, C{sub 2}F{sub 6}, and Cl{sub 2} gases was studied. • Etch rate and etch profile of TiO{sub 2} films were investigated under each gas chemistry. • The highest degree of anisotropy was achieved at 25% C{sub 2}F{sub 6}/Ar. • Strong etch conditions at 25% C{sub 2}F{sub 6}/Ar increased etch rate and degree of anisotropy. • X-ray photoelectron spectroscopy revealed the existence of F-containing etch residues.

  20. Plasma etching of cavities into diamond anvils for experiments at high pressures and high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Weir, S.T.; Cynn, H.; Falabella, S.; Evans, W.J.; Aracne-Ruddle, C.; Farber, D.; Vohra, Y.K. (LLNL); (UAB)

    2012-10-23

    We describe a method for precisely etching small cavities into the culets of diamond anvils for the purpose of providing thermal insulation for samples in experiments at high pressures and high temperatures. The cavities were fabricated using highly directional oxygen plasma to reactively etch into the diamond surface. The lateral extent of the etch was precisely controlled to micron accuracy by etching the diamond through a lithographically fabricated tungsten mask. The performance of the etched cavities in high-temperature experiments in which the samples were either laser heated or electrically heated is discussed.

  1. Optimum inductively coupled plasma etching of fused silica to remove subsurface damage layer

    Science.gov (United States)

    Jiang, Xiaolong; Liu, Ying; Liu, Zhengkun; Qiu, Keqiang; Xu, Xiangdong; Hong, Yilin; Fu, Shaojun

    2015-11-01

    In this work, we introduce an optimum ICP etching technique that successfully removes the subsurface damage (SSD) layer of fused silica without causing plasma induced surface damage (PISD) or lateral etching of SSD. As one of the commonest PISD initiators, metal contamination from reactor chamber is prevented by employing a simple isolation device. Based on this device, a unique low-density pitting damage is discovered and subsequently eliminated by optimizing the etching parameters. Meanwhile etching anisotropy also improves a lot, thus preventing the lateral etching of SSD. Using this proposed technique, SSD layer of fused silica is successfully removed with a surface roughness of 0.23 nm.

  2. Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

    Institute of Scientific and Technical Information of China (English)

    郑艳彬; 李光; 王文龙; 李秀昌; 姜志刚

    2012-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs.

  3. Effect of dimethyl sulfoxide on bond durability of fiber posts cemented with etch-and-rinse adhesives

    Science.gov (United States)

    Shafiei, Fereshteh; Sarafraz, Zahra

    2016-01-01

    PURPOSE This study was undertaken to investigate whether use of an adhesive penetration enhancer, dimethyl sulfoxide (DMSO), improves bond stability of fiber posts to root dentin using two two-step etch-and-rinse resin cements. MATERIALS AND METHODS Forty human maxillary central incisor roots were randomly divided into 4 groups after endodontic treatment and post space preparation, based on the fiber post/cement used with and without DMSO pretreatment. Acid-etched root dentin was treated with 5% DMSO aqueous solution for 60 seconds or with distilled water (control) prior to the application of Excite DSC/Variolink II or One-Step Plus/Duo-link for post cementation. After micro-slicing the bonded root dentin, push-out bond strength (P-OBS) test was performed immediately or after 1-year of water storage in each group. Data were analyzed using three-way ANOVA and Student's t-test (α=.05). RESULTS A significant effect of time, DMSO treatment, and treatment × time interaction were observed (P.05). CONCLUSION DMSO-wet bonding might be a beneficial method in preserving the stability of resin-dentin bond strength over time when fiber post is cemented with the tested etch-and-rinse adhesive cements. PMID:27555893

  4. Effect of dimethyl sulfoxide on bond durability of fiber posts cemented with etch-and-rinse adhesives

    Science.gov (United States)

    Shafiei, Fereshteh; Sarafraz, Zahra

    2016-01-01

    PURPOSE This study was undertaken to investigate whether use of an adhesive penetration enhancer, dimethyl sulfoxide (DMSO), improves bond stability of fiber posts to root dentin using two two-step etch-and-rinse resin cements. MATERIALS AND METHODS Forty human maxillary central incisor roots were randomly divided into 4 groups after endodontic treatment and post space preparation, based on the fiber post/cement used with and without DMSO pretreatment. Acid-etched root dentin was treated with 5% DMSO aqueous solution for 60 seconds or with distilled water (control) prior to the application of Excite DSC/Variolink II or One-Step Plus/Duo-link for post cementation. After micro-slicing the bonded root dentin, push-out bond strength (P-OBS) test was performed immediately or after 1-year of water storage in each group. Data were analyzed using three-way ANOVA and Student's t-test (α=.05). RESULTS A significant effect of time, DMSO treatment, and treatment × time interaction were observed (P.05). CONCLUSION DMSO-wet bonding might be a beneficial method in preserving the stability of resin-dentin bond strength over time when fiber post is cemented with the tested etch-and-rinse adhesive cements.

  5. Low-temperature aging of delta-ferrite in 316L SS welds. Changes in mechanical properties and etching properties

    International Nuclear Information System (INIS)

    Thermal aging embrittlement of LWR components made of stainless cast (e.g. CF-8 and CF-8M) is a potential degradation issue, and careful attention has been paid on it. Although welds of austenitic stainless steels (SSs) have γ-δ duplex microstructure, which is similar to that of the stainless cast, examination on thermal aging characteristics of the SS welds is very limited. In order to evaluate thermal aging behavior of weld metal of austenitic stainless steel, the 316L SS weld metal has been prepared and changes in mechanical properties and in etching properties at isothermal aging at 335degC have been investigated. The hardness of the ferrite phase has increased with aging, while the hardness of austenite phase has stayed same. It has been suggested that spinodal decomposition has occurred in δ-ferrite by the 335degC aging. The etching rates of δ-ferrite at immersion test in 5wt% hydrochloric acid solution have been also investigated using an AFM technique. The etching rate of ferrite phase has decreased consistently with the increase in hardness of ferrite phase. It has been thought that this characteristic is also caused by spinodal decomposition of ferrite into chromium-rich (α') and iron-rich (α). (author)

  6. Influence of oxygen inhibition on the surface free-energy and dentin bond strength of self-etch adhesives.

    Science.gov (United States)

    Koga, Kensaku; Tsujimoto, Akimasa; Ishii, Ryo; Iino, Masayoshi; Kotaku, Mayumi; Takamizawa, Toshiki; Tsubota, Keishi; Miyazaki, Masashi

    2011-10-01

    We compared the surface free-energies and dentin bond strengths of single-step self-etch adhesives with and without an oxygen-inhibited layer. The labial dentin surfaces of bovine mandibular incisors were wet ground with #600-grit silicon carbide paper. The adhesives were applied to the ground dentin, light-irradiated, and the oxygen-inhibited layer was either retained or removed with ethanol. The surface free-energies were determined by measuring the contact angles of three test liquids placed on the cured adhesives. The dentin bond strengths of specimens with and without the oxygen-inhibited layer were measured. For all surfaces, the value of the estimated surface tension component was relatively constant at 35.5-39.8 mJ m(-2) . The value of the , Lewis acid component increased slightly when the oxygen-inhibited layer was removed, whereas that of the , Lewis base component decreased significantly. The bond strengths of the self-etch adhesives were significantly lower in specimens without an oxygen-inhibited layer (13.2-13.6 MPa) than in those with an oxygen-inhibited layer (17.5-18.4 MPa). These results indicate that the presence of an oxygen-inhibited layer in single-step self-etch adhesives with advanced photoinitiators promotes higher dentin bond strength. PMID:21896057

  7. High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Su Min; Garay, Adrian Adalberto; Lee, Wan In; Chung, Chee Won, E-mail: cwchung@inha.ac.kr

    2015-07-31

    Inductively coupled plasma reactive ion etching (ICPRIE) of Ru thin films patterned with TiN hard masks was investigated using a CH{sub 3}OH/Ar gas mixture. As the CH{sub 3}OH concentration in CH{sub 3}OH/Ar increased, the etch rates of Ru thin films and TiN hard masks decreased. However, the etch selectivity of Ru films on TiN hard masks increased and the etch slope of Ru film improved at 25% CH{sub 3}OH/Ar. With increasing ICP radiofrequency power and direct current bias voltage and decreasing process pressure, the etch rates of Ru films increased, and the etch profiles were enhanced without redeposition on the sidewall. Optical emission spectroscopy and X-ray photoelectron spectroscopy were employed to analyze the plasma and surface chemistry. Based on these results, Ru thin films were oxidized to RuO{sub 2} and RuO{sub 3} compounds that were removed by sputtering of ions and the etching of Ru thin films followed a physical sputtering with the assistance of chemical reaction. - Highlights: • Etching of Ru films in CH{sub 3}OH/Ar was investigated. • High selectivity and etch profile with high degree of anisotropy were obtained. • XPS analysis was examined to identify the etch chemistry. • During etching Ru was oxidized to RuO{sub 2} and RuO{sub 3} can be easily sputtered off.

  8. Temperature-Dependent Nanofabrication on Silicon by Friction-Induced Selective Etching.

    Science.gov (United States)

    Jin, Chenning; Yu, Bingjun; Xiao, Chen; Chen, Lei; Qian, Linmao

    2016-12-01

    Friction-induced selective etching provides a convenient and practical way for fabricating protrusive nanostructures. A further understanding of this method is very important for establishing a controllable nanofabrication process. In this study, the effect of etching temperature on the formation of protrusive hillocks and surface properties of the etched silicon surface was investigated. It is found that the height of the hillock produced by selective etching increases with the etching temperature before the collapse of the hillock. The temperature-dependent selective etching rate can be fitted well by the Arrhenius equation. The etching at higher temperature can cause rougher silicon surface with a little lower elastic modulus and hardness. The contact angle of the etched silicon surface decreases with the etching temperature. It is also noted that no obvious contamination can be detected on silicon surface after etching at different temperatures. As a result, the optimized condition for the selective etching was addressed. The present study provides a new insight into the control and application of friction-induced selective nanofabrication. PMID:27119157

  9. Development of deep silicon plasma etching for 3D integration technology

    Directory of Open Access Journals (Sweden)

    Golishnikov А. А.

    2014-02-01

    Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

  10. Tobacco Etch Virus protease: A shortcut across biotechnologies.

    Science.gov (United States)

    Cesaratto, Francesca; Burrone, Oscar R; Petris, Gianluca

    2016-08-10

    About thirty years ago, studies on the RNA genome of Tobacco Etch Virus revealed the presence of an efficient and specific protease, called Tobacco Etch Virus protease (TEVp), that was part of the Nuclear Inclusion a (NIa) enzyme. TEVp is an efficient and specific protease of 27kDa that has become a valuable biotechnological tool. Nowadays TEVp is a unique endopeptidase largely exploited in biotechnology from industrial applications to in vitro and in vivo cellular studies. A number of TEVp mutants with different rate of cleavage, stability and specificity have been reported. Similarly, a panel of different target cleavage sites, derived from the canonical ENLYFQ-G/S site, has been established. In this review we describe these aspects of TEVp and some of its multiple applications. A particular focus is on the use and molecular biology of TEVp in living cells and organisms.

  11. Continuous flow ink etching for direct micropattern of silicon dioxide

    Science.gov (United States)

    Xing, Jiyao; Rong, Weibin; Wang, Lefeng; Sun, Lining

    2016-07-01

    A continuous flow ink etching (CFIE) method is presented to directly create micropatterns on a 60 nm thick silicon dioxide (SiO2) layer. This technique employs a micropipette filled with potassium bifluoride (KHF2) aqueous solution to localize SiO2 dissolution in the vicinity of the micropipette tip. Both dot and line features with well-defined edges were fabricated and used as hardmasks for silicon etching. The linear density of etchant ink deposited on the SiO2 can be used to regulate the depth, width and 2D morphology of the line pattern. The characterization of CFIE including the resolution (about 4 μm), reproducibility and capability to form complex structures are reported. This technique provides a simple and flexible alternative to generate the SiO2 hardmask for silicon microstructure fabrication.

  12. Preparation of Electrode Array by Electrochemical Etching Based on FEM

    Institute of Scientific and Technical Information of China (English)

    Minghuan WANG; Di ZHU; Lei WANG

    2008-01-01

    Process technology of multiple cylindrical micro-pins by wire-electrical discharge machining (wire-EDM) and electrochemical etching was presented.A row of rectangular micro-columns were machined by wire-EDM and then machined into cylindrical shape by electrochemical etching.However,the shape of the multiple electrodes and the consistent sizes of the electrodes row are not easy to be controlled.In the electrochemical process,the shape of the cathode electrode determines the current density distribution on the anode and so the forming of multiple electrodes.This paper proposes a finite element method (FEM) to accurately optimize the electrode profile.The microelectrodes row with uniformity diameters with size from hundreds micrometers to several decades could be fabricated,and mathematical model controlling the shape and diameter of multiple microelectrodes was provided.Furthermore,a good agreement between experimental and theoretical results was confirmed.

  13. Production of Porous ZnSe by Electrochemical Etching Method

    Directory of Open Access Journals (Sweden)

    А.F. Dyadenchuk

    2013-10-01

    Full Text Available Here we describe the production features of a porous layer on the surface of n-type single-crystalline zinc selenide. The surface structure is investigated and the photomicrographs of porous layers of the treated ZnSe crystal are represented. Process of the mosaic structure formation depending on the etching time is considered. The value of the flat-band potential with respect to the used electrolyte is calculated.

  14. Indirect tooling based on micromilling, electroforming and selective etching

    DEFF Research Database (Denmark)

    Tang, Peter Torben; Fugl, Jimmy; Uriarte, Luis;

    2006-01-01

    -milling, electroforming and selective etching. The basic concept is to exploit the benefit of true 3D-machining in a soft substrate such as aluminium with the excellent replication capabilities of nickel electroforming. The term indirect machining covers the fact that the master that is produced by machining a positive...... structure, i.e. the opposite of what is needed for the actual mould insert....

  15. Freeze-Etch of Emulsified Cake Batters During Baking

    OpenAIRE

    Cloke, J. D.; Gordon, J; Davis, E.A.

    1982-01-01

    Cryofixation, freeze-etch techniques were used to study the structure of cake batters made from a lean cake formulation before heating and after heating to temperatures up to l00-l02°C. Batters were prepared without added emulsifiers and with saturated and unsaturated monoglycerides replacing 5 and l 0% of the oil. Unsaturated monoglyceri des were more effective than saturated monoglycerides in dispersing oil droplets through the batter. Saturated monoglycerides formed liquid crystals during ...

  16. Geopolymerisation of fly ashes with waste aluminium anodising etching solutions.

    Science.gov (United States)

    Ogundiran, M B; Nugteren, H W; Witkamp, G J

    2016-10-01

    Combined management of coal combustion fly ash and waste aluminium anodising etching solutions using geopolymerisation presents economic and environmental benefits. The possibility of using waste aluminium anodising etching solution (AES) as activator to produce fly ash geopolymers in place of the commonly used silicate solutions was explored in this study. Geopolymerisation capacities of five European fly ashes with AES and the leaching of elements from their corresponding geopolymers were studied. Conventional commercial potassium silicate activator-based geopolymers were used as a reference. The geopolymers produced were subjected to physical, mechanical and leaching tests. The leaching of elements was tested on 28 days cured and crushed geopolymers using NEN 12457-4, NEN 7375, SPLP and TCLP leaching tests. After 28 days ambient curing, the geopolymers based on the etching solution activator showed compressive strength values between 51 and 84 MPa, whereas the commercial potassium silicate based geopolymers gave compressive strength values between 89 and 115 MPa. Based on the regulatory limits currently associated with the used leaching tests, all except one of the produced geopolymers (with above threshold leaching of As and Se) passed the recommended limits. The AES-geopolymer geopolymers demonstrated excellent compressive strength, although less than geopolymers made from commercial activator. Additionally, they demonstrated low element leaching potentials and therefore can be suitable for use in construction works.

  17. Model for aspect ratio dependent etch modulated processing

    International Nuclear Information System (INIS)

    A time-multiplexed, anisotropic, inductively coupled plasma Si deep reactive ion etch process is characterized in terms of the Si macroload, cross-wafer spatial variation, local pattern density, and feature size. The process regime is established as neutral flux limited, in which material transport occurs in the molecular flow to transition flow regimes. For this process regime, a semiempirical, unified analytic model and a numeric model are developed using the Dushman and Clausing vacuum conductance correction factors, respectively, in the Coburn and Winters model of aspect ratio dependent etching. The experimental reaction probability for etching of Si by F was found to be 0.24 for Dushman's factor and 0.22 for Clausing's factor. Each model is validated to ±10% against experimental depth data for microdonut and trench test structures and match each other to within 10% for depths of up to 160 μm. The observed depth range is 64 μm at a depth of 160 μm.

  18. Overview of atomic layer etching in the semiconductor industry

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J., E-mail: keren.kanarik@lamresearch.com; Lill, Thorsten; Hudson, Eric A.; Sriraman, Saravanapriyan; Tan, Samantha; Marks, Jeffrey; Vahedi, Vahid; Gottscho, Richard A. [Lam Research Corporation, 4400 Cushing Parkway, Fremont, California 94538 (United States)

    2015-03-15

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

  19. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes.

    Science.gov (United States)

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-05-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11kg/m(3) of copper and 1.35kg/m(3) of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100-500nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. PMID:26918838

  20. Improvement of polycrystalline silicon wafer solar cell efficiency by forming nanoscale pyramids on wafer surface using a self-mask etching technique.

    Science.gov (United States)

    Lin, Hsin-Han; Chen, Wen-Hwa; Hong, Franklin C-N

    2013-05-01

    The creation of nanostructures on polycrystalline silicon wafer surface to reduce the solar reflection can enhance the solar absorption and thus increase the solar-electricity conversion efficiency of solar cells. The self-masking reactive ion etching (RIE) was studied to directly fabricate nanostructures on silicon surface without using a masking process for antireflection purpose. Reactive gases comprising chlorine (Cl2), sulfur hexafluoride (SF6), and oxygen (O2) were activated by radio-frequency plasma in an RIE system at a typical pressure of 120-130 mTorr to fabricate the nanoscale pyramids. Poly-Si wafers were etched directly without masking for 6-10 min to create surface nanostructures by varying the compositions of SF6, Cl2, and O2 gas mixtures in the etching process. The wafers were then treated with acid (KOH:H2O = 1:1) for 1 min to remove the damage layer (100 nm) induced by dry etching. The damage layer significantly reduced the solar cell efficiencies by affecting the electrical properties of the surface layer. The light reflectivity from the surface after acid treatment could be significantly reduced to <10% for the wavelengths between 500 and 900 nm. The effects of RIE and surface treatment conditions on the surface nanostructures and the optical performance as well as the efficiencies of solar cells will be presented and discussed. The authors have successfully fabricated large-area (156 × 156 mm(2)) subwavelength antireflection structure on poly-Si substrates, which could improve the solar cell efficiency reproducibly up to 16.27%, higher than 15.56% using wet etching. PMID:23847751

  1. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes.

    Science.gov (United States)

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-05-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11kg/m(3) of copper and 1.35kg/m(3) of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100-500nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process.

  2. Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride

    Science.gov (United States)

    Apte, Palash; Rybnicek, Kimon; Stoltz, Andrew

    2016-09-01

    This paper reports the effect of macro-loading on mercury cadmium telluride (Hg1- x Cd x Te) and Photoresist (PR) etched in an inductively coupled plasma (ICP). A significant macro-loading effect is observed, which affects the etch rates of both PR and Hg1- x Cd x Te. It is observed that the exposed silicon area has a significant effect on the PR etch rate, but not on the Hg1- x Cd x Te etch rate. It is also observed that the exposed Hg1- x Cd x Te area has a significant effect on the etch rate of the PR, but the exposed PR area does not seem to have an effect on the Hg1- x Cd x Te etch rate. Further, the exposed Hg1- x Cd x Te area is shown to affect the etch rate of the Hg1- x Cd x Te, but there does not seem to be a similar effect for the exposed PR area on the etch rate of the PR. Since the macro-loading affects the selectivity significantly, this effect can cause significant problems in the etching of deep trenches. A few techniques to reduce the effect of macro-loading on the etch rates of the PR and Hg1- x Cd x Te are listed, herein.

  3. Bio-inspired nanobowl/nanoball structures fabricated via solvent etching/swelling on nanosphere assembly patterns

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Wan-Yi; Liu, Pang-Hsin; Wu, You [Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC (China); Chung, Yi-Chang, E-mail: ycchung@nuk.edu.tw [Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2014-11-03

    Ordered self-assembled nanopatterns have attracted much attention for their ability to mimic moth-eye structures and display unique optical properties. In the study, emulsifier-free emulsion polymerization was performed to prepare polystyrene nanospheres with uniform size distribution. Various hydrophilic monomers were added to copolymerize with styrene, including 2-hydroxyethyl methacrylate, acrylic acid, and methyl acrylic acid, respectively, to enhance the self-assembling ability of nanospheres. The nanosphere suspension was injected into an air–water interface to self-assemble a nanosphere array, and then the resulting photonic crystal film was deposited on a substrate using a scooping transfer technique. The layer-by-layer scooping transfer technique can be applied to produce 2D and 3D assembled nanosphere layers on an area as large as a 4-inch wafer. The pattern of the 2D nanosphere array was attached to a UV-curable precursor surface and then encapsulated and transferred to the crosslinked resin after UV irradiation. The sample was then immersed into some solvents which could partially swell the resin surface to produce nanoball structures or etch the surface to generate nanobowl structures. The size of the as-prepared polystyrene spheres was about 360 nm, while the feature size of the nanoballs was about 230 nm after undergoing acetonitrile swelling. The facile and inexpensive technique can be applied to produce ordered nanoball patterns for various applications, such as optical coatings, superhydrophobic coatings, biophotosensors, antireflection films, dry adhesives, and so on. - Highlights: • We prepared core-shell PS nanosphere suspensions with narrow-size-distribution. • We employed a scooping technique to fabricate large-area nanosphere monolayers. • Swelling by acetonitrile formed nanoballs on a UV resin/nanosphere laminated layer. • Etching by toluene produced nanobowl on the UV resin/nanosphere laminated layer. • The parted nanoball

  4. A novel oxidation-based wet etching method for AlGaN/GaN heterostructures

    Institute of Scientific and Technical Information of China (English)

    Cai Jinbao; Wang Jinyan; Liu Yang; Xu Zhe; Wang Maojun; Yu Min; Xie Bing

    2013-01-01

    A novel wet etching method for AlGaN/GaN heterojunction structures is proposed using thermal oxidation followed by wet etching in KOH solution.It is found that an AlGaN/GaN heterostructure after high temperature oxidation above 700 ℃ could be etched off in a homothermal (70 ℃) KOH solution while the KOH solution had no etching effects on the region of the A1GaN/GaN heterostructure protected by a SiO2 layer during the oxidation process.A groove structure with 150 nm step depth on an AlGaN/GaN heterostructure was formed after 8 h thermal oxidation at 900 ℃ followed by 30 min treatment in 70 ℃ KOH solution.As the oxidation time increases,the etching depth approaches saturation and the roughness of the etched surface becomes much better.The physical mechanism of this phenomenon is also discussed.

  5. Inductively coupled plasma etching of HgCdTe IRFPAs detectors at cryogenic temperature

    Science.gov (United States)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Zhang, S.; Hu, X. N.; Ding, R. J.; He, L.

    2016-05-01

    To fabricate various advanced structures with HgCdTe material, the Inductively Coupled Plasma enhanced Reactive Ion Etching system is indispensable. However, due to low damage threshold and complicated behaviors of mercury in HgCdTe, the lattice damage and induced electrical conversion is very common. According to the diffusion model during etching period, the mercury interstitials, however, may not diffuse deep into the material at cryogenic temperature. In this report, ICP etching of HgCdTe at cryogenic temperature was implemented. The etching system with cryogenic assembly is provided by Oxford Instrument. The sample table was cooled down to 123K with liquid nitrogen. The mask of SiO2 with a contact layer of ZnS functioned well at this temperature. The selectivity and etching velocity maintained the same as reported in the etching of room temperature. Smooth and clean surfaces and profiles were achieved with an optimized recipe.

  6. Profile Evolution Simulation in Etching Systems Using Level Set Methods

    Science.gov (United States)

    Hwang, Helen H.; Govindan, T. R.; Meyyappan, M.

    1998-01-01

    Semiconductor device profiles are determined by the characteristics of both etching and deposition processes. In particular, a highly anisotropic etch is required to achieve vertical sidewalls. However, etching is comprised of both anisotropic and isotropic components, due to ion and neutral fluxes, respectively. In Ar/Cl2 plasmas, for example, neutral chlorine reacts with the Si surfaces to form silicon chlorides. These compounds are then removed by the impinging ion fluxes. Hence the directionality of the ions (and thus the ion angular distribution function, or IAD), as well as the relative fluxes of neutrals and ions determines the amount of undercutting. One method of modeling device profile evolution is to simulate the moving solid-gas interface between the semiconductor and the plasma as a string of nodes. The velocity of each node is calculated and then the nodes are advanced accordingly. Although this technique appears to be relatively straightforward, extensive looping schemes are required at the profile corners. An alternate method is to use level set theory, which involves embedding the location of the interface in a field variable. The normal speed is calculated at each mesh point, and the field variable is updated. The profile comers are more accurately modeled as the need for looping algorithms is eliminated. The model we have developed is a 2-D Level Set Profile Evolution Simulation (LSPES). The LSPES calculates etch rates of a substrate in low pressure plasmas due to the incident ion and neutral fluxes. For a Si substrate in an Ar/C12 gas mixture, for example, the predictions of the LSPES are identical to those from a string evolution model for high neutral fluxes and two different ion angular distributions.(2) In the figure shown, the relative neutral to ion flux in the bulk plasma is 100 to 1. For a moderately isotropic ion angular distribution function as shown in the cases in the left hand column, both the LSPES (top row) and rude's string

  7. Development and application of the electrochemical etching technique

    International Nuclear Information System (INIS)

    This report documents the advances achieved in the development and application of several etched damage track plastic dosimeters that can be used to measure dose-equivalent from neutrons with energies from thermal to 20 MeV. The project was initiated with the design of a rem-responding dosimeter that measured fast (> 1 MeV) neutron dose-equivalent as a function of the damage track density directly induced within the volume of polycarbonate foils amplified by electrochemical etching. Stillwagon (1978) adapted electrochemical etching of polycarbonate foils (ECEPF) to alpha dosimetry and used the technique to determine Pu-239 uptake in human bone. Su (1979) extended the usefulness of the ECEPF neutron dosimetry technique to encompass thermal neutron dose measurement. The thermal neutron dosimeter was composed of an external radiator tablet made of 7LiF in contact with a polycarbonate foil and utilized the thermal neutron-induced 6Li(n, α)3H reaction to give a dose-equivalent response as a function of alpha track density registered in the detector foil. An intermediate (1 eV-1 MeV) neutron dosimeter was developed and has been shown to give an approximately dose-equivalent response to neutrons with energies from 1 eV to 17 MeV. The intermediate neutron dosimeter consists of 6LiF-Teflon/CR-39 Polymer foil assembly which is enclosed by a (Cd + In) neutron filter. The neutron dose-equivalent is measured as a variable function of the damage track density registered in the CR-39 detector foil due to alpha particles from the 1/v dependent 6Li(n, α)3H reaction, recoil H, C, O nuclei from neutron-induced elastic scattering within the foil volume, and protons from the 6Li(n, p) reaction for neutron energies above 2 MeV. 46 figs., 6 tabs

  8. Aerosol chemistry in Titan's ionosphere: simultaneous growth and etching processes

    Science.gov (United States)

    Carrasco, Nathalie; Cernogora, Guy; Jomard, François; Etcheberry, Arnaud; Vigneron, Jackie

    2016-10-01

    Since the Cassini-CAPS measurements, organic aerosols are known to be present and formed at high altitudes in the diluted and partially ionized medium that is Titan's ionosphere [1]. This unexpected chemistry can be further investigated in the laboratory with plasma experiments simulating the complex ion-neutral chemistry starting from N2-CH4 [2]. Two sorts of solid organic samples can be produced in laboratory experiments simulating Titan's atmospheric reactivity: grains in the volume and thin films on the reactor walls. We expect that grains are more representative of Titan's atmospheric aerosols, but films are used to provide optical indices for radiative models of Titan's atmosphere.The aim of the present study is to address if these two sorts of analogues are chemically equivalent or not, when produced in the same N2-CH4 plasma discharge. The chemical compositions of both these materials are measured by using elemental analysis, XPS analysis and Secondary Ion Mass Spectrometry. We find that films are homogeneous but significantly less rich in nitrogen and hydrogen than grains produced in the same experimental conditions. This surprising difference in their chemical compositions is explained by the efficient etching occurring on the films, which stay in the discharge during the whole plasma duration, whereas the grains are ejected after a few minutes [3]. The impact for our understanding of Titan's aerosols chemical composition is important. Our study shows that chemical growth and etching process are simultaneously at stake in Titan's ionosphere. The more the aerosols stay in the ionosphere, the more graphitized they get through etching process. In order to infer Titan's aerosols composition, our work highlights a need for constraints on the residence time of aerosols in Titan's ionosphere. [1] Waite et al. (2009) Science , 316, p. 870[2] Szopa et al. (2006) PSS, 54, p. 394[3] Carrasco et al. (2016) PSS, 128, p. 52

  9. Fabrication of porous silicon by metal-assisted etching using highly ordered gold nanoparticle arrays

    OpenAIRE

    Scheeler, Sebastian P; Ullrich, Simon; Kudera, Stefan; Pacholski, Claudia

    2012-01-01

    A simple method for the fabrication of porous silicon (Si) by metal-assisted etching was developed using gold nanoparticles as catalytic sites. The etching masks were prepared by spin-coating of colloidal gold nanoparticles onto Si. An appropriate functionalization of the gold nanoparticle surface prior to the deposition step enabled the formation of quasi-hexagonally ordered arrays by self-assembly which were translated into an array of pores by subsequent etching in HF solution containing H...

  10. Etching Mechanism of Niobium in Coaxial Ar/Cl2 RF Plasma

    OpenAIRE

    Upadhyay, J.; Im, Do; Popović, S.; Valente-Feliciano, A. -M.; Phillips, L.; Vušković, L.

    2014-01-01

    The understanding of the Ar/Cl2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task, because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial RF discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate unifo...

  11. Study of etching processes in the GEM detectors

    CERN Document Server

    Zavazieva, Darina

    2016-01-01

    Gaseous Electron Multiplier (GEM) detectors are known to operate stably at high gains and high particle fluxes. Though, at very high gains and fluxes it was observed that the insulating polyimide layer between the GEM electrodes gets etched, changing the original shape of the hole, and therefore varying the gain and the energy resolution of the detector. The idea of the project to observe degradation effect of the GEM foils during the Triple GEM detector operation in extreme conditions under X-ray radiation.

  12. Fountain pen nanochemistry: Atomic force control of chrome etching

    Science.gov (United States)

    Lewis, Aaron; Kheifetz, Yuri; Shambrodt, Efim; Radko, Anna; Khatchatryan, Edward; Sukenik, Chaim

    1999-10-01

    In this report we demonstrate a general method for affecting chemical reactions with a high degree of spatial control that has potentially wide applicability in science and technology. Our technique is based on complexing the delivery of liquid or gaseous materials through a cantilevered micropipette with an atomic force microscope that is totally integrated into a conventional optical microscope. Controlled etching of chrome is demonstrated without detectable effects on the underlying glass substrate. This simple combination allows for the nanometric spatial control of the whole world of chemical reactions in defined regions of surfaces. Applications of the technique in critical areas such as mask repair are likely.

  13. Nuclear particle track-etched anti-bogus mark

    International Nuclear Information System (INIS)

    Nuclear particle track-etched anti-bogus mark is a new type of forgery-proof product after engraving gravure printing, thermocolour, fluorescence, laser hologram and metal concealed anti-bogus mark. The mark is manufactured by intricate high technology and the state strictly controlled sensitive nuclear facilities to ensure the mark not to be copied. The pattern of the mark is specially characterized by permeability of liquid to be discriminated from forgery. The genuine mark can be distinguished from sham one by transparent liquid (e.g. water), colorful pen and chemical reagent. The mark has passed the official examination of health safety. It is no danger of nuclear irradiation. (author)

  14. Analysis of Etched CdZnTe Substrates

    Science.gov (United States)

    Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

    2016-06-01

    State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

  15. Comparative evaluation of tensile bond strengths of total-etch adhesives and self-etch adhesives with single and multiple consecutive applications: An in vitro study

    Directory of Open Access Journals (Sweden)

    Mandava Deepthi

    2009-01-01

    Full Text Available Aim: This study evaluates the effect of single and multiple consecutive applications of adhesives on the tensile bond strength. The currently available adhesives follow either the total-etch or the self-etch concept. However, in both techniques the uniformity and thickness of the adhesive layer plays a significant role in the development of a good bond. Materials and Methods: Sixty composite-dentin bonded specimens were prepared using a total-etch adhesive (Gluma and another 60 using a self-etch adhesive (AdheSE. Each group was further divided into six subgroups based on the number of applications, i.e., single application and multiple (2, 3, 4, 6, and 8 applications. The tensile bond strength was tested with the Instron universal testing machine. The values were analyzed with one-way ANOVA and multiple range tests by Tukey′s HSD procedure to identify those subgroups that had significantly higher bond strength. Results: The results indicate that with total-etch adhesive the bond strength increases significantly as the number of applications are increased from one to two or from two to three", for self-etch adhesive the bond strength obtained with two applications is significantly higher than that with one application. However, for both adhesive systems, there was a decrease in the tensile bond strength values with further applications. Conclusion: We conclude that, in the clinical setting, the application of multiple coats of total etch adhesive improves bonding.

  16. Etching characteristic studies for the detection of alpha particles in DAM–ADC nuclear track detector

    International Nuclear Information System (INIS)

    This study reports the characteristic studies for the detection of alpha particles in DAM–ADC nuclear track detector. Several important parameters that control the track formation such as, the bulk etch rate (VB), track etching rate (VT), dependence of VB and VT on etching concentration and temperature have been extensively studied. The activation energy (Eb) of the bulk etching rate for the DAM–ADC sheets has been calculated, the dependence of etching efficiency and sensitivity upon etchant concentrations and temperature has been investigated, registration efficiency of DAM–ADC detector etched at the optimum etching condition has been examined. The detailed studied results presented in this study provide various useful information about the mechanism of track formation in polymers. - Highlights: • Detection of alpha particles in DAM–ADC nuclear track detector. • The activation energy of the bulk etching rate for the DAM–ADC sheets. • The dependence of etching efficiency upon etchant concentrations • Registration efficiency of DAM–ADC detector

  17. Damage in etching of (Ba, Sr)TiO3 thin films using inductively coupled plasma

    International Nuclear Information System (INIS)

    High dielectric (Ba, Sr)TiO3 thin films were etched in an inductively coupled plasma as a function of the Cl2/Ar gas mixing ratio. Under Cl2 (20)/Ar (80), the maximum etch rate of the BST film was 400 Aa/min and the selectivities of BST to Pt and PR obtained were 0.4 and 0.2, respectively. Etching by-products remained on the surface of BST and resulted in varying the stochiometry. Therefore, we investigated the surface of the etched BST using x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and x-ray diffraction (XRD). From the results of XPS analysis, we found that metal (Ba or Sr) chloride compounds remained on the surface of the etched BST for high boiling points. The morphology of the etched surface was evaluated with AFM. The surface roughness decreased as the Cl2 increased in the Cl2/Ar plasma. From the results of XRD analysis, the crystallinity of etched BST films under Ar only and under Cl2 (20)/Ar (80) was similar to that of as-deposited BST. However, the (100) diffraction peak abruptly decreased at the Cl2 only plasma. It was assumed that metal (Ba or Sr) chloride compounds remained on the etched BST surface and changed the stoichiometry, resulting in crystallinity of the BST film during the etch process

  18. Surface tension and its role for vertical wet etching of silicon

    International Nuclear Information System (INIS)

    In this paper, we present for the first time a systematic investigation of the role of the surface tension in anisotropic wet etching of silicon, focusing on the sidewall angle. We show that in the KOH and NaOH solutions with high surface tension a reliable fabrication of vertical sidewalls is possible. Etching experiments on (1 0 0)-Si and surface tension measurements via bubble pressure tensiometry were conducted using inorganic etchants in a wide range of concentrations. Finally, the surface tension of the etching solutions was identified as an important quantity that determined the etching behavior, while concentration dependences were eliminated by controlling the surface tension using temperature. (paper)

  19. Study of the roughness in a photoresist masked, isotropic, SF6-based ICP silicon etch

    DEFF Research Database (Denmark)

    Larsen, Kristian Pontoppidan; Petersen, Dirch Hjorth; Hansen, Ole

    2006-01-01

    In this paper we study the etching behavior and the resulting roughness in photoresist-masked isotropic silicon plasma etch performed in an inductively coupled plasma (ICP) etcher using SF6. We report detailed observations of the resulting roughness for various etching parameters, covering......: pressure from 2.5 to 70 mTorr, SF6 flow rate from 50 to 300 sccm, platen power from 0 to 16 W, and ICP power from 1000 to 3000 W. Etch processes with a normalized roughness below 0.005 were found at low pressure, p = 10 mTorr, while larger normalized roughness, above 0.02, occurred at higher pressures, p...

  20. Fabrication of ordered nanoporous anodic alumina prepatterned by mold-assisted chemical etching

    Directory of Open Access Journals (Sweden)

    Leu Ing-Chi

    2011-01-01

    Full Text Available Abstract In this article, a simple and cost-effective method to create patterned nanoindentations on Al surface via mold-assisted chemical etching process is demonstrated. This report shows the reaction-diffusion method which formed nanoscale shallow etch pits by the absorption/liberation behaviors of chemical etchant in poly(dimethylsiloxane stamp. During subsequent anodization, it was possible to obtain the ordered nanopore arrays with 277 nm pitch that were guided by the prepatterned etch pits. The prepatterned etch pits obtained can guide the growth of AAO nanopores during anodization and facilitate the preparation of ordered nanopore arrays.

  1. Direct determination of bulk etching rate for LR-115-II solid state nuclear track detectors

    Indian Academy of Sciences (India)

    T A Salama; U Seddik; T M Heggazy; A Ahmed Morsy

    2006-09-01

    The thickness of the removed layer of the LR-115-II solid state nuclear track detector during etching is measured directly with a rather precise instrument. Dependence of bulk etching rate on temperature of the etching solution is investigated. It has been found that the bulk etching rate is 3.2 m/h at 60°C in 2.5 N NaOH of water solution. It is also found that the track density in detectors exposed to soil samples increases linearly with the removed layer.

  2. Numerical and experimental studies of the carbon etching in EUV-induced plasma

    CERN Document Server

    Astakhov, D I; Lee, C J; Ivanov, V V; Krivtsun, V M; Yakushev, O; Koshelev, K N; Lopaev, D V; Bijkerk, F

    2015-01-01

    We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion fluxes from the plasma to the surface. By relating the computed ion fluxes to the experimentally observed etching rate at various pressures and ion energies, we show that at low pressure and energy, carbon etching is due to chemical sputtering, while at high pressure and energy a reactive ion etching process is likely to dominate.

  3. Fabrication of 3D structure by combining AFM and chemical etching on crystalline silicon surface

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    AFM is used for forming silicon dioxide as a layer (nask) on the silicon wafer surface (100) during the cutting process in ambient atmosphere. The silicon dioxide is made through reaction of silicon and oxygen in the atmosphere. As a result of the anisotropic behavior of single crystalline silicon, the etching rates in alkaline solution depend greatly on the various crystal orientations. The anisotropic etching behaviors in KOH solution and reasons of crystalline silicon are described. Effect of etching conditions such as etching temperature and KOH concentration of the alkaline solution on height of the micro-protuberances has been described.

  4. Release of multi-layer metal structure in MEMS devices by dry etching technique

    Science.gov (United States)

    Das, N. C.

    2002-04-01

    Reactive ion etching technique was used to remove interleave photoresist layer for free standing metal structure in microelectromechanical systems (MEMS) devices. Mixture of oxygen and CF 4 gas was used to get isotropic etching profile. Etching process was optimized to get large metal structure of 100×100 μm 2 without any surface bending. The etching rate of 0.7 μm/min at 60 W of RIE plasma power is found to be optimum process for the particular application. The reported dry release technique is fully compatible with standard silicon IC processing and hence can be used for hybridize process used in MEMS array application.

  5. Effect of desensitizing agents on the microtensile bond strength of two-step etch-and-rinse adhesives to dentin.

    Science.gov (United States)

    Cortiano, Fernanda M; Rached, Rodrigo N; Mazur, Rui F; Vieira, Sergio; Freire, Andrea; de Souza, Evelise M

    2016-06-01

    Desensitizers can be used to control postoperative sensitivity in adhesive restorations. The aim of this study was to evaluate the effect of desensitizing agents on the bond strength of two-step etch-and-rinse adhesive systems to dentin. Forty-two human molars were sectioned to obtain 3-mm-thick dentin discs. The discs were divided into three groups (n = 14 in each) - no-treatment control group (CT), and oxalic acid [BisBlock (BB)] and calcium phosphate [Desensibilize Nano-P (NP)] desensitizers - before the application of two adhesive systems [Adper Single Bond Plus (SB) and One-Step Plus (OSP)]. A nanoparticle composite resin was used to create a 3-mm-thick build-up. The specimens were stored in distilled water for 24 h before a microtensile bond-strength test was performed. The failure modes were determined using a stereomicroscope at 100 × magnification. Specimens were sectioned perpendicular to the interface for scanning electron microscopy analyses. The CT-SB group exhibited the highest bond strength, differing significantly from BB-SB and BB-OSP groups. Mixed failures were prevalent for all groups. Scanning electron microscopy revealed a continuous hybrid layer and resin tags in all groups. Dentin bond strength of etch-and-rinse adhesive systems was reduced by an oxalic acid desensitizer but was not affected by a calcium phosphate-containing desensitizer. PMID:27038226

  6. ECE laboratory in the Vinča institute: Its basic characteristics and fundamentals of electrochemic etching on polycarbonate

    Directory of Open Access Journals (Sweden)

    Žunić Zora S.

    2003-01-01

    Full Text Available This paper deals with the introductory aspects of the Electrochemical Etching Laboratory installed at the VINČA Institute in the year 2003. The main purpose of the laboratory is its field application for radon and thoron large-scale survey using passive radon/thoron UFO type detectors. Since the etching techniques together with the laboratory equipment were transferred from the National Institute of Radiological Sciences, Chiba, Japan, it was necessary for both etching conditions to be confirmed and to be checked up^ i. e., bulk etching speeds of chemical etching and electrochemical etching in the VINCA Electrochemical Etching Laboratory itself. Beside this initial step, other concerns were taken into consideration in this preliminary experimental phase such as the following: the measurable energy range of the polycarbonate film, background etch pit density of the film and its standard deviation and reproducibility of the response to alpha particles for different sets of etchings.

  7. Towards refractive index sensitivity of long-period gratings at level of tens of µm per refractive index unit: fiber cladding etching and nano-coating deposition.

    Science.gov (United States)

    Śmietana, Mateusz; Koba, Marcin; Mikulic, Predrag; Bock, Wojtek J

    2016-05-30

    In this work we report experimental results on optimizing the refractive index (RI) sensitivity of long-period gratings (LPGs) by fiber cladding etching and thin aluminum oxide (Al2O3) overlay deposition. The presented LPG takes advantage of work in the dispersion turning point (DTP) regime as well as the mode transition (MT) effect for higher-order cladding modes (LP09 and LP010). The MT was obtained by depositing Al2O3 overlays with single-nanometer precision using the Atomic Layer Deposition method (ALD). Etching of both the overlay and the fiber cladding was performed using hydrofluoric acid (HF). For shallow etching of the cladding, i.e., DTP observed at next = 1.429 and 1.439 RIU for an LPG with no overlay, followed by deposition of an overlay of up to 167 nm in thickness, HF etching allowed for post-deposition fine-tuning of the overlay thickness resulting in a significant increase in RI sensitivity mainly at the DTP of the LP09 cladding mode. However, at an external RI (next) above 1.39 RIU, the DTP of LP010 was noticed, and its RI sensitivity exceeded 9,000 nm/RIU. Deeper etching of the cladding, i.e., DTP observed for next above 1.45 RIU, followed by the deposition of thicker overlays (up to 201 nm in thickness) allowed the sensitivity to reach values of over 40,000 nm/RIU in a narrow RI range. Sensitivity exceeding 20,000 nm/RIU was obtained in an RI range suitable for label-free biosensing applications. PMID:27410112

  8. Effect of collagen fibrils removal on shear bond strength of total etch and self etch adhesive systems

    Directory of Open Access Journals (Sweden)

    Pishevar L.

    2009-12-01

    Full Text Available "nBackground and Aim: Sodium hypochlorite can remove the organic phase of the demineralized dentin and it produces direct resin bonding with hydroxyapatite crystals. Therefore, the hydrolytic degradation of collagen fibrils which might affect the bonding durability is removed. The aim of this study was to evaluate the effect of collagen fibrils removal by 10% NaOCl on dentin shear bond strength of two total etch and self etch adhesive systems."nMaterials and Methods: Sixty extracted human premolar teeth were used in this study. Buccal surface of teeth were grounded until dentin was exposed. Then teeth were divided into four groups. According to dentin surface treatment, experimental groups were as follows: Group I: Single Bond (3M according to manufacture instruction, Group II: 10% NaOCl+Single bond (3M, Group III: Clearfil SE Bond (Kuraray according to manufacture instruction, and Group IV: Clearfil SE Bond primer. After that, the specimens were immersed in 50% acetone solution for removing extra monomer. Then the specimens were rinsed and dried. 10% NaOCl was applied and finally adhesive was used. Then composite was bonded to the treated surfaces using a 4 2 mm cylindrical plastic mold. Specimens were thermocycled for 500 cycles (5-55ºC. A shear load was employed by a universal testing machine with a cross head speed of 1mm/min. The data were analyzed for statistical significance with One-way ANOVA, Two-way ANOVA and Tukey HSD post-hoc tests."nResults: The mean shear bond strengths of groups were as follows: Single Bond=16.8±4.2, Clearfil SE Bond=23.7±4.07, Single Bond+NaOCl=10.5±4.34, Clearfil SE Bond+NaOCl=23.3±3.65 MPa. Statistical analysis revealed that using 10% NaOCl significantly decreased the shear bond strength in Single Bond group (P=0.00, but caused no significant difference in the shear bond strength in Clearfil SE Bond group (P=0.99."nConclusion: Based on the results of this study, NaOCl treatment did not improve the bond

  9. HAREM: high aspect ratio etching and metallization for microsystems fabrication

    Science.gov (United States)

    Sarajlic, Edin; Yamahata, Christophe; Cordero, Mauricio; Collard, Dominique; Fujita, Hiroyuki

    2008-07-01

    We report a simple bulk micromachining method for the fabrication of high aspect ratio monocrystalline silicon MEMS (microelectromechanical systems) in a standard silicon wafer. We call this two-mask microfabrication process high aspect ratio etching and metallization or HAREM: it combines double-side etching and metallization to create suspended micromechanical structures with electrically 'insulating walls' on their backside. The insulating walls ensure a proper electrical insulation between the different actuation and sensing elements situated on either fixed or movable parts of the device. To demonstrate the high potential of this simple microfabrication method, we have designed and characterized electrostatically actuated microtweezers that integrate a differential capacitive sensor. The prototype showed an electrical insulation better than 1 GΩ between the different elements of the device. Furthermore, using a lock-in amplifier circuit, we could measure the position of the moving probe with few nanometers resolution for a displacement range of about 3 µm. This work was presented in part at the 21st IEEE MEMS Conference (Tucson, AZ, USA, 13-17 January, 2008) (doi:10.1109/MEMSYS.2008.4443656).

  10. Detection of HEMA in self-etching adhesive systems with high performance liquid chromatography

    Science.gov (United States)

    Panduric, V.; Tarle, Z.; Hameršak, Z.; Stipetić, I.; Matosevic, D.; Negovetić-Mandić, V.; Prskalo, K.

    2009-04-01

    One of the factors that can decrease hydrolytic stability of self-etching adhesive systems (SEAS) is 2-hydroxymethylmethacrylate (HEMA). Due to hydrolytic instability of acidic methacrylate monomers in SEAS, HEMA can be present even if the manufacturer did not include it in original composition. The aim of the study was to determine the presence of HEMA because of decomposition by hydrolysis of methacrylates during storage, resulting with loss of adhesion strength to hard dental tissues of the tooth crown. Three most commonly used SEAS were tested: AdheSE ONE, G-Bond and iBond under different storage conditions. High performance liquid chromatography analysis was performed on a Nucleosil C 18-100 5 μm (250 × 4.6 mm) column, Knauer K-501 pumps and Wellchrom DAD K-2700 detector at 215 nm. Data were collected and processed by EuroCrom 2000 HPLC software. Calibration curves were made related eluted peak area to known concentrations of HEMA (purchased from Fluka). The elution time for HEMA is 12.25 min at flow rate 1.0 ml/min. Obtained results indicate that no HEMA was present in AdheSE ONE because methacrylates are substituted with methacrylamides that seem to be more stable under acidic aqueous conditions. In all other adhesive systems HEMA was detected.

  11. Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems

    Science.gov (United States)

    Beheim, Glenn M.

    2000-01-01

    Silicon carbide (SiC), because of its superior electrical and mechanical properties at elevated temperatures, is a nearly ideal material for the microminiature sensors and actuators that are used in harsh environments where temperatures may reach 600 C or greater. Deep etching using plasma methods is one of the key processes used to fabricate silicon microsystems for more benign environments, but SiC has proven to be a more difficult material to etch, and etch depths in SiC have been limited to several micrometers. Recently, the Sensors and Electronics Technology Branch at the NASA Glenn Research Center at Lewis Field developed a plasma etching process that was shown to be capable of etching SiC to a depth of 60 mm. Deep etching of SiC is achieved by inductive coupling of radiofrequency electrical energy to a sulfur hexafluoride (SF6) plasma to direct a high flux of energetic ions and reactive fluorine atoms to the SiC surface. The plasma etch is performed at a low pressure, 5 mtorr, which together with a high gas throughput, provides for rapid removal of the gaseous etch products. The lateral topology of the SiC microstructure is defined by a thin film of etch-resistant material, such as indium-tin-oxide, which is patterned using conventional photolithographic processes. Ions from the plasma bombard the exposed SiC surfaces and supply the energy needed to initiate a reaction between SiC and atomic fluorine. In the absence of ion bombardment, no reaction occurs, so surfaces perpendicular to the wafer surface (the etch sidewalls) are etched slowly, yielding the desired vertical sidewalls.

  12. The research on improvement of etching uniformity by post etching system%补蚀系统改善蚀刻均匀性的研究

    Institute of Scientific and Technical Information of China (English)

    贝俊涛

    2014-01-01

    The post etching system, which was used to improve etching uniformity, couldn’t play an important role as expected. Because it couldn’t meet the demands of diversification for various of boards size, copper thickness, and so on. This article improved etching uniformity by improving agile post etching system.%蚀刻线补蚀系统可改善蚀刻均匀性,但鉴于印制电路板尺寸、蚀刻铜厚等千差万别,现常规蚀刻补蚀系统难以满足多样化需求,应用价值不大。本研究通过优化改善补蚀系统,实现补蚀系统的灵活应用,大大改善了蚀刻均匀性。

  13. Comparative study of the bond strength of self-etch adhesive systems with different pHs applied to enamel and dentine

    Directory of Open Access Journals (Sweden)

    Rubens Côrte Real de Carvalho

    2008-01-01

    Full Text Available Objective: To evaluate whether the pH of the primer is capable of influencing the bond strength of three self-etching adhesive systems to enamel and dentin. Methods: Forty enamel surfaces and 40 dentin surfaces were used, divided into eight groups (n=10 according to the adhesive system (Single Bond, ClearfilSE, AdheSE, Adper Prompt L-Pop. A 3 mm matrix was used to delimit the area restored with composite resin Z250. The test specimens were stored in distilled water at 37ºC for 24 hours and submitted to mechanical shear testing.Results: The ANOVA and Tukey statistical tests showed that there was no statistical difference among the groups in which the adhesivesystems Single Bond (control and Clearfil SE Bond were used and among the groups in which the AdheSE and Adper Prompt L-Pop systemswere used, both with statistical difference when compared with the Single Bond and Clearfil SE Bond groups. There was no statisticallysignificant difference between the bond strength values obtained, when the same adhesive systems were compared with regard to thesubstrates (enamel and dentin. The increased acidity of the self-etch adhesive systems was not capable of increasing the bond strengthvalues. Conclusion: The increasing of self-etch acidity of adhesive systems was not capable to increase the band strenght values. In the comparison between the same adhesive system in enamel or dentin, all adhesive presented similar performance, irrespective of the substrate used.

  14. Comparative study of etched enamel and dentin for the adhesion of composite resins with the Er:YAG 2,94 μm laser and CO2 9,6 μm laser: morphological (SEM) and tensile bond strength analysis

    International Nuclear Information System (INIS)

    The aim of this study was to evaluate and compare the tensile bond strength of a composite resin adhered to the enamel and dentin which have received superficial irradiation with an Er:YAG laser (2.94 μm) or with CO2 laser ( 9.6 μm) and later on etched with the phosphoric acid at 35%. After the use of the adhesive system, resin cones were made on the etched surfaces by both lasers and tensile bond strength tests were performed. All samples were observed at the SEM - there was an increase of the degree of fusion and resolidification in the irradiated enamel and dentin samples with the CO2 laser (9.6 μm), creating a vitrified layer with tiny craters. With the Er:YAG laser (2.94 μm) there were typical morphological explosive microablation with the exposition of the tubules in the dentin.The surface acquired by the association of the CO2 laser ( 9.6 μm) plus acid etching no longer presented the aspect of fusion being this layer completely removed. There were statistical significant differences among ali three methods of etching in the treatment of the enamel and dentin surface. The tensile bond strength test showed that etching of these enamel and dentin surfaces with acid exclusively (control group) presented great values, surpassing the values of the etching acquired with the Er:YAG laser (2.94 μ) plus acid or the CO2 laser (9.6 μm) plus acid. With the parameters used in this experiment the Er:YAG laser (2.94 μm) showed to be more effective than the CO2 laser (9.6 μm) for the hard dental surfaces etching procedure. (author)

  15. Preparation of Chemically Etched Tips for Ambient Instructional Scanning Tunneling Microscopy

    Science.gov (United States)

    Zaccardi, Margot J.; Winkelmann, Kurt; Olson, Joel A.

    2010-01-01

    A first-year laboratory experiment that utilizes concepts of electrochemical tip etching for scanning tunneling microscopy (STM) is described. This experiment can be used in conjunction with any STM experiment. Students electrochemically etch gold STM tips using a time-efficient method, which can then be used in an instructional grade STM that…

  16. Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

    International Nuclear Information System (INIS)

    Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0 nm/mm for GaN, Al0.175Ga0.825N, Al0.23Ga0.77N, and Al0.4Ga0.6N, respectively. It was also found that we could achieve a high Al0.175Ga0.825N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated ID larger than 850 mA/mm and a maximum gm about 163 mS/mm from PEC wet etched HFET with a 0.5 μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller

  17. Etchant wettability in bulk micromachining of Si by metal-assisted chemical etching

    Science.gov (United States)

    Yoon, Sung-Soo; Lee, Yeong Bahl; Khang, Dahl-Young

    2016-05-01

    Wet bulk micromachining of Si by metal-assisted chemical etching (MaCE) has successfully been demonstrated. Based on the mechanism of defective etching results from Ag and Au metal catalyst experiments, the wettability of etchant solution, in addition to metal type, has been found to have profound effect on the etching process. Addition of low surface tension co-solvent, ethanol in this work, into conventional etchant formulation has enabled complete wetting of etchant on surface, which prevents hydrogen bubble attachment on sample surface during the etching. The complete elimination of bubble attachment guarantees very uniform etch rate on all over the sample surface, and thus prevents premature fragmentation/rupture of catalyst metal layer. Under the optimized etching conditions, the MaCE could be done for up to 12 h without any noticeable film rupture and thus etching defects. Thanks to very smooth surface of the etched patterns, conformal contact and direct bonding of elastomer on such surface has been easily accomplished. The method demonstrated here can pave the way for application of simple, low-cost MaCE process in the bulk micromachining of Si for various applications.

  18. One-step Fabrication of Nanoporous Black Silicon Surfaces for Solar Cells using Modified Etching Solution

    Institute of Scientific and Technical Information of China (English)

    Ye-hua Tang; Chun-lan Zhou; Su Zhou; Yan Zhao; Wen-jing Wang; Jian-ming Fei; Hong-bin Cao

    2013-01-01

    Currently,a conventional two-step method has been used to generate black silicon (BS)surfaces on silicon substrates for solar cell manufacturing.However,the performances of the solar cell made with such surface generation method are poor,because of the high surface recombination caused by deep etching in the conventional surface generation method for BS.In this work,a modified wet chemical etching solution with additives was developed.A zhomogeneous BS layer with random porous structure was obtained from the modified solution in only one step at room temperature.The BS layer had low reflectivity and shallow etching depth.The additive in the etch solution performs the function of pH-modulation.After 16-min etching,the etching depth in the samples was approximately 200 nm,and the spectrum-weighted-reflectivity in the range from 300 nm to 1200 nm was below 5%,BS solar cells were fabricated in the production line.The decreased etching depth can improve the electrical performance of solar cells because of the decrease in surface recombination.An efficiency of 15,63% for the modified etching BS solar cells was achieved on a large area,ptype single crystalline silicon substrate with a 624.32-mV open circuit voltage and a 77.88%fill factor.

  19. Light coupling and light trapping in alkaline etched multicrystalline silicon wafers for solar cells

    NARCIS (Netherlands)

    Hylton, J.D.

    2006-01-01

    The reflection reducing and light trapping properties of alkaline etched multicrystalline silicon wafers are investigated experimentally. Following an overview of various chemical texturisation methods and their effect upon the surface morphology, a high concentration saw-damage etch and a low conc

  20. Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

    NARCIS (Netherlands)

    Gonzalez, Carlos M.; Timilsina, Rajendra; Li, Guoliang; Duscher, Gerd; Rack, Philip D.; Slingenbergh, Winand; van Dorp, Willem F.; De Hosson, Jeff T. M.; Klein, Kate L.; Wu, Huimeng M.; Stern, Lewis A.

    2014-01-01

    The gas field ion microscope was used to investigate helium and neon ion beam induced etching of nickel as a candidate technique for extreme ultraviolet (EUV) lithography mask editing. No discernable nickel etching was observed for room temperature helium exposures at 16 and 30 keV in the dose range

  1. Effect of UV-radiation on track etch parameters of CR-39 plastic track detectors

    International Nuclear Information System (INIS)

    CR-39 track detectors have been irradiated with 239Pu source at nuclear physics laboratory B.H.U. Varanasi, to investigate the track recording properties of the detector. The bulk etch rate is determined by measuring the change in thickness before and after etching, and track etch rate is determined by measuring the change in track length. Other track parameters such as diameter and sensitivity of the plastic detector are also determined. Another set of CR-39 plastic detector is irradiated by 239Pu source and exposed by UV-radiation after irradiation to see the effect of UV-rays on track etches parameters. All detectors were etched in 6.25 N NaOH solution at different temperatures for different hours and all track parameters are measured by optical microscope (Olympus BH-2, magnification 600x). After etching in 6.25 N NaOH solution we see that bulk etch rate, track etch rate and track diameter increased in the case of UV-radiation exposed CR-39 plastics detectors. (author)

  2. Deep anisotropic dry etching of silicon microstructures by high-density plasmas

    NARCIS (Netherlands)

    Blauw, M.A.

    2004-01-01

    This thesis deals with the dry etching of deep anisotropic microstructures in monocrystalline silicon by high-density plasmas. High aspect ratio trenches are necessary in the fabrication of sensitive inertial devices such as accellerometers and gyroscopes. The etching of silicon in fluorine-based pl

  3. Fabrication of Submicron Beams with Galvanic Etch Stop for Si in TMAH

    Directory of Open Access Journals (Sweden)

    Yuelin Wang

    2009-04-01

    Full Text Available A novel method has been developed to fabricate submicron beams with galvanic etch stop for Si in TMAH. The different Au:Si area ratios before and after the release of the beams are used to trigger the galvanic etch stop to fabricate submicron single crystal Si beams in standard Si wafers. Before the beams are released from the substrate, the Au electrodes are connected to the substrate electrically. The Au:Si area ratios are much smaller than the threshold value. TMAH etches the Si wafers. After the beams are fully released, they are mechanically supported by the Au wires, which also serve as the galvanic etch stop cathodes. The Au:Si area ratios are much larger than the threshold value. The beams are protected by galvanic etch stop. The thicknesses of the beams are determined by shallow dry etching before TMAH etching. A 530 nm thick beam was fabricated in standard (111 wafers. Experiments showed that the beam thicknesses did not change with over etching, even if the SiO2 layers on the surface of the beams were stripped.

  4. Direct, etching of GaAs Crystal Excited by a Vacuum Ultraviolet Lamp

    Institute of Scientific and Technical Information of China (English)

    韩正甫; 廖艳林; 周红军; 蒋作宏; 张国斌; 曹卓良

    2003-01-01

    A successful direct, etching system excited by a vacuum ultraviolet hollow-cathode lamp is reported. The result shows that the facility can transfer a mesh pattern exactly and directly to n-type GaAs wafer, which is the same as that direct, etched by synchrotron radiation.

  5. Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing-Rui Wu

    2014-01-01

    Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

  6. Development of a selective chemical etch to improve the conversion efficiency of Zn-rich Cu2ZnSnS4 solar cells.

    Science.gov (United States)

    Fairbrother, Andrew; García-Hemme, Eric; Izquierdo-Roca, Victor; Fontané, Xavier; Pulgarín-Agudelo, Fabián A; Vigil-Galán, Osvaldo; Pérez-Rodríguez, Alejandro; Saucedo, Edgardo

    2012-05-16

    Improvement of the efficiency of Cu(2)ZnSnS(4) (CZTS)-based solar cells requires the development of specific procedures to remove or avoid the formation of detrimental secondary phases. The presence of these phases is favored by the Zn-rich and Cu-poor conditions that are required to obtain device-grade layers. We have developed a selective chemical etching process based on the use of hydrochloric acid solutions to remove Zn-rich secondary phases from the CZTS film surface, which are partly responsible for the deterioration of the series resistance of the cells and, as a consequence, the conversion efficiency. Using this approach, we have obtained CZTS-based devices with 5.2% efficiency, which is nearly twice that of the devices we have prepared without this etching process. PMID:22545682

  7. The bulk-etch thickness for the formation of etched through tracks in CR-39 detectors as a tool for nuclear spectrometry: a computational study

    International Nuclear Information System (INIS)

    The bulk-etch thickness which is removed from a single surface of CR-39 nuclear track detectors for the formation of etched through tracks has been calculated using various charged particles with ranges greater than the particle's trajectory in the detector. An attempt is made to explore the possibility of making use of the bulk-etch thickness at the moment of perforation for energy spectroscopy and particle identification. In the calculations track development kinetics were used for varying track etch rate ratio V. The value of V is determined for nuclei of Z≤26 and was found to be a function of the atomic number Z, the mass number A and the residual range of the nuclear particle. Also an empirical formula between the track length and the minor track diameter, the dip angle and the bulk-etch thickness is obtained. Present calculations show that the etched-off thickness from the detector surface at the moment of perforation of CR-39 depends upon REL and is also a function of Z/β of the nuclear particle. The obtained results have important applications in the fields of nuclear spectroscopy and the production of nuclear track filters

  8. Marginal microleakage in vitro study of occlusal fissures sealing prepared and etched or not with Er: YAG laser; Avaliacao in vitro da microinfiltracao marginal em selamentos oclusais preparados e condicionados ou nao pelo laser de Er:YAG

    Energy Technology Data Exchange (ETDEWEB)

    Youssef, Fernanda de Almeida

    2004-07-01

    The aim of this in vitro study was to evaluate the degree of marginal microleakage in occlusal sealing by invasive techniques, after preparation with Er:YAG laser followed or not by Er:YAG laser etching and compared to the conventional technique. Thirty human premolars were divided into three groups: A (control group) - cavities were prepared with high speed and etched with 37% orthophosphoric acid; group B - cavities were prepared with Er:YAG (350 mJ, 4 Hz and 112 J /cm{sup 2}) and etched with 37% orthophosphoric acid; group C - cavities were prepared with Er:YAG laser (350 mJ, 4 Hz and 112 J/cm{sup 2}), and etched with Er:YAG laser (80 mJ, 4 Hz and 25 m/cm{sup 2}). All cavities were treated with the same adhesive system and restored with flow composite according to manufacturer instructions. Teeth were submitted to thermal cycling procedures and immersed in 50% Silver Nitrate Solutions for 8 hours in total darkness. Teeth were sectioned longitudinally in the bucco-lingual direction, in slices of 1 mm thick. Each slice was immersed into photo developing solution under 16 hours of fluorescent light. Slices were photographed and microleakage was scored from 0 to 7 J by three standard examiners. Results showed statistically significant differences for group C (Er:YAG laser preparation and etching). We concluded that Er:YAG laser can be used for cavity preparation of occlusal sealing, like the conventional high speed method. However, this laser, used as enamel etching agent, could not promote an adequate surface for adhesive procedures. (author)

  9. Well-controlled wet etching of ZnO films using hydrogen peroxide solution

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yuchao [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275 (China); Wu, Tianzhun, E-mail: tz.wu@siat.ac.cn [Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055 (China); Chen, Mingming; Su, Longxing; Zhang, Quanlin; Yuan, Lifang; Zhu, Yuan [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275 (China); Tang, Zikang, E-mail: phzktang@ust.hk [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275 (China); Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)

    2014-02-15

    We propose hydrogen peroxide (H{sub 2}O{sub 2}) solution as a novel and promising etchant for ZnO thin film with well-controlled etching performances and enhanced ultraviolet (UV) luminescence, which is also facile, inexpensive and environmentally friendly. We have analyzed its etching mechanism and surface modification effect for ZnO. Using this etchant, fine patterns have been transferred to the ZnO single-crystal films with good fidelity. The etching performances have been comprehensively investigated using Raman spectroscopy, scanning electronic microscopy (SEM), atom force microscopy (AFM), surface profiler and photoluminescence (PL) spectrometer. The results have shown that ZnO films after the long-time etching exhibited linear etching rate, smooth profile and increased UV emission, which enables H{sub 2}O{sub 2} solution as an excellent wet etchant for various ZnO-based optoelectronic devices.

  10. Two-step controllable electrochemical etching of tungsten scanning probe microscopy tips

    KAUST Repository

    Khan, Yasser

    2012-01-01

    Dynamic electrochemical etching technique is optimized to produce tungsten tips with controllable shape and radius of curvature of less than 10 nm. Nascent features such as dynamic electrochemical etching and reverse biasing after drop-off are utilized, and two-step dynamic electrochemical etching is introduced to produce extremely sharp tips with controllable aspect ratio. Electronic current shut-off time for conventional dc drop-off technique is reduced to ?36 ns using high speed analog electronics. Undesirable variability in tip shape, which is innate to static dc electrochemical etching, is mitigated with novel dynamic electrochemical etching. Overall, we present a facile and robust approach, whereby using a novel etchant level adjustment mechanism, 30° variability in cone angle and 1.5 mm controllability in cone length were achieved, while routinely producing ultra-sharp probes. © 2012 American Institute of Physics.

  11. Etching Mechanism of Niobium in Coaxial Ar/Cl2 RF Plasma

    CERN Document Server

    Upadhyay, J; Popović, S; Valente-Feliciano, A -M; Phillips, L; Vušković, L

    2014-01-01

    The understanding of the Ar/Cl2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task, because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial RF discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, RF power, DC bias, Cl2 concentration, diameter of the inner electrode, temperature of the outer cylinder and position of the samples in the structure is determined. To understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

  12. Etching mechanism of niobium in coaxial Ar/Cl2 radio frequency plasma

    Energy Technology Data Exchange (ETDEWEB)

    Upadhyay, Janardan [Old Dominion Univ., Norfolk, VA (United States); Im, Do [Old Dominion Univ., Norfolk, VA (United States); Popovic, Svetozar [Old Dominion Univ., Norfolk, VA (United States); Valente-Feliciano, Anne -Marie [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Phillips, H. Larry [Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States); Vuskovic, Leposova [Old Dominion Univ., Norfolk, VA (United States)

    2015-03-18

    The understanding of the Ar/Cl2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial radio-frequency (rf) discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, rf power, dc bias, Cl2 concentration, diameter of the inner electrode, temperature of the outer cylinder, and position of the samples in the structure is determined. Furthermore, to understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

  13. Electrical properties of Hg1-xCdxTe by different etching techniques

    Science.gov (United States)

    Chen, X. T.; Qiao, H.; Liu, X. Y.; Yang, K. J.

    2015-11-01

    Effects on the electrical properties of HgCdTe photoconductive devices etched by inductively coupled plasma (ICP) based on CH4-Ar mixture, ion beam milling (IBM) and bromine-hydrogen bromide solution (Br2/HBr) have been investigated. Magnetic-field-dependent Hall measurement and optoelectronic performance measurement at liquid nitrogen temperature were performed. Mobility spectrum analysis (MSA) and multicarrier fitting (MCF) were applied to evaluate the carrier characteristics. Sample etched by ICP indicated a higher mobility and the carrier scattering mechanism was dominated by polar optical phonon (POP) which could lead to superior detector performance accordingly. Meanwhile, sample etched by IBM was found to have large amount of electron concentration and sample etched by Br2/HBr showed a very low mobility. The dominant mechanism of Br2/HBr etched sample was ionized impurity scattering for the carriers which meant inferior resultant detector performance.

  14. Advanced simulation technology for etching process design for CMOS device applications

    Science.gov (United States)

    Kuboi, Nobuyuki; Fukasawa, Masanaga; Tatsumi, Tetsuya

    2016-07-01

    Plasma etching is a critical process for the realization of high performance in the next generation of CMOS devices. To predict and control fluctuations in the etching properties accurately during mass production, it is essential that etching process simulation technology considers fluctuations in the plasma chamber wall conditions, the effects of by-products on the critical dimensions, the Si recess dependence on the wafer open area ratio and local pattern structure, and the time-dependent plasma-induced damage distribution associated with the three-dimensional feature scale profile at the 100 nm level. This consideration can overcome the issues with conventional simulations performed under the assumed ideal conditions, which are not accurate enough for practical process design. In this article, these advanced process simulation technologies are reviewed, and, from the results of suitable process simulations, a new etching system that automatically controls the etching properties is proposed to enable stable CMOS device fabrication with high yields.

  15. Thermal cum track-etch studies on unirradiated and γ-irradiated Garware polyester films

    International Nuclear Information System (INIS)

    Effects induced by gamma irradiation in Garware Polyester Films (GPF) have been studied through thermal and track-etch techniques. GPF samples were irradiated with 60Co γ-rays up to doses of 4.7 Mrad and 8.1 Mrad. The modifications in the γ-irradiated polymers as a function of gamma-dose have been studied through different characterization techniques such as differential thermal analysis (DTA), thermogravimetry (TG), and track-etch studies. The thermal stability of GPF films was found to be an inverse function of γ-dose. Further, these γ-irradiated GPF films were exposed to fission fragments from 252Cf source and the bulk etch rates were determined by track etch studies. The bulk etch rates were found to be increased with the increase in γ-dose. Thus, gamma irradiation has led to degradation of the film by chain scission converting it into an easily etchable material. (author)

  16. Focused electron beam induced etching of titanium with XeF{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Schoenaker, F J; Cordoba, R; Fernandez-Pacheco, R; Magen, C; Zuriaga-Monroy, C; Ibarra, M R [Instituto de Nanociencia de Aragon, Universidad de Zaragoza, E-50018 Zaragoza (Spain); Stephan, O [Laboratoire de Physique des Solides, CNRS UMR 8502, Universite Paris Sud XI, Batiment 510, F-91405 Orsay (France); De Teresa, J M, E-mail: deteresa@unizar.es [Departamento de Fisica de la Materia Condensada, Universidad de Zaragoza, E-50009 Zaragoza (Spain)

    2011-07-01

    Titanium is a relevant technological material due to its extraordinary mechanical and biocompatible properties, its nanopatterning being an increasingly important requirement in many applications. We report the successful nanopatterning of titanium by means of focused electron beam induced etching using XeF{sub 2} as a precursor gas. Etch rates up to 1.25 x 10{sup -3} {mu}m{sup 3} s{sup -1} and minimum pattern sizes of 80 nm were obtained. Different etching parameters such as beam current, beam energy, dwell time and pixel spacing are systematically investigated, the etching process being optimized by decreasing both the beam current and the beam energy. The etching mechanism is investigated by transmission electron microscopy. Potential applications in nanotechnology are discussed.

  17. Profile Control of a Borosilicate-Glass Groove Formed by Deep Reactive Ion Etching

    CERN Document Server

    Akashi, T

    2008-01-01

    Deep reactive ion etching (DRIE) of borosilicate glass and profile control of an etched groove are reported. DRIE was carried out using an anodically bonded silicon wafer as an etching mask. We controlled the groove profile, namely improving its sidewall angle, by removing excessively thick polymer film produced by carbonfluoride etching gases during DRIE. Two fabrication processes were experimentally compared for effective removal of the film : DRIE with the addition of argon to the etching gases and a novel combined process in which DRIE and subsequent ultrasonic cleaning in DI water were alternately carried out. Both processes improved the sidewall angle, and it reached 85o independent of the mask-opening width. The results showed the processes can remove excessive polymer film on sidewalls. Accordingly, the processes are an effective way to control the groove profile of borosilicate glass.

  18. Fast patterning and dry-etch of SiNχ for high resolution nanoimprint templates

    Institute of Scientific and Technical Information of China (English)

    Shu Zhen; Wan Jing; Lu Bingrui; Xie Shenqi; Chen Yifang; Qu Xinping; Liu Ran

    2009-01-01

    We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography (EBL) and a dry etch technique on a SiNx substrate, intended for large area manufacturing. To this end,the highly sensitive chemically amplified resist (CAR), NEB-22, with negative tone was used. The EBL process first defines the template pattern in NEB-22, which is then directly used as an etching mask in the subsequent reactive ion etching (RIE) on the SiNx to form the desired templates. The properties of both e-beam lithography and dry etch of NEB-22 were carefully studied, indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching mask. Nevertheless, our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing.

  19. Influence of plasma etching in a multi chamber system on a-Si solar cell performance

    Science.gov (United States)

    Kausche, H.; Moeller, M.; Plaettner, R.

    The plasma-CVD deposition system consisting of two chambers and developed at Siemens can deposit 9 pin solar cells of 100 sq cm simultaneously. Cleaning of the internal surfaces coated with a-Si is performed by plasma etching. The etch gases CF4+O2, SF6 and NF3 were investigated with respect to their etch rates, their efficacy in cleaning 'hidden' parts in the chamber, and with respect to the etching reaction products affecting the performance of the subsequently deposited cells. Mass spectrometric cell performance measurements were therefore taken. The sequence of etching with CF4+O2 or NF3, glow discharge in Ar+H2, pre-deposition of a-Si and cell deposition proved to be a suitable method for achieving high cell performance.

  20. Fabrication of damascene Cu wirings using solid acidic catalyst

    Directory of Open Access Journals (Sweden)

    Keita Yagi et al

    2007-01-01

    Full Text Available The copper damascene process is one of the most promising technologies for fabricating Cu wirings for electronic devices such as LSIs. In this research, the fabrication of damascene Cu wirings was conducted using solid acidic catalyst. When a Cu-plated wafer, whose oxide is a basic oxide is dipped into a mixture of oxidizing solution and acidic solution, surface atoms are ionized and etched off into the solution. However, because conventional nonelectrolytic etching does not have a reference surface, it is difficult to utilize for planarization. Therefore, a new nonelectrolytic machining method using a cation-exchange fabric instead of an acidic solution was developed. To be more precise, the planarization of a Cu-plated wafer was carried out by rubbing with the cation-exchange fabric in ozone water. Basically, this method exploits chemical reactions so that the physical properties of the workpiece surface are not deteriorated. Furthermore, this method uses no chemicals except for ozone water, which easily dissociates into water and oxygen molecules; thus, this method is a low-cost, environmentally friendly process. In this paper, as a preliminary experiment, the nonelectrolytic etching of a Cu sample using solutions of O3 and CO2 was carried out to inspect the dependence of the etching rate on [O3] and [H+]. The results indicate that the etching rate increased as [O3] and [H+] increased. When [H+] was high relative to [O3], a smooth etch-pit-free surface was achieved. Next, nonelectrolytic etching using a cation-exchange fabric was carried out, and properties similar to those in the case of etching using solutions were obtained. Finally, damascene Cu wirings were fabricated using ozone water and a cation-exchange catalyst.

  1. Gate oxide punching thru mechanism in plasma dry etching

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The punching thru mechanism of gate oxide (thickness about 15A) was investi- gated. Because of the thin thickness of gate oxide, gate oxide punching thru may easily happen during the plasma process. It was found that what caused the punching thru was not only the selectivity of poly-silicon/oxide but also the pattern topography. We used the basic SRAM pattern to check this topography effect, and found that gate oxide located at the narrow spacing of two parallel serpentine lines was the most easily punched thru. What caused the topography effect was the starvation of oxygen in these places which were induced by the residue of poly-silicon and enhanced by electron shading effect. So, to solve the issue of gate oxide punching thru, firstly the selectivity should be enough, secondly we should pay attention to the etching pattern topography.

  2. Black Silicon formation using dry etching for solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Murias, D. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Reyes-Betanzo, C., E-mail: creyes@inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Moreno, M.; Torres, A.; Itzmoyotl, A. [Instituto Nacional de Astrofisica, Optica y Electronica, INAOE, Puebla (Mexico); Ambrosio, R.; Soriano, M. [Universidad Autonoma de Ciudad Juarez, Chihuahua (Mexico); Lucas, J. [Instituto Tecnologico de Tehuacan, Puebla (Mexico); Cabarrocas, P. Roca i [Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, CNRS, Palaiseau (France)

    2012-09-20

    A study on the formation of Black Silicon on crystalline silicon surface using SF{sub 6}/O{sub 2} and SF{sub 6}/O{sub 2}/CH{sub 4} based plasmas in a reactive ion etching (RIE) system is presented. The effect of the RF power, chamber pressure, process time, gas flow rates, and gas mixtures on the texture of silicon surface has been analyzed. Completely Black Silicon surfaces containing pyramid like structures have been obtained, using an optimized mask-free plasma process. Moreover, the Black Silicon surfaces have demonstrated average values of 1% and 4% for specular and diffuse reflectance respectively, feature that is suitable for the fabrication of low cost solar cells.

  3. Total analysis systems with Thermochromic Etching Discs technology.

    Science.gov (United States)

    Avella-Oliver, Miquel; Morais, Sergi; Carrascosa, Javier; Puchades, Rosa; Maquieira, Ángel

    2014-12-16

    A new analytical system based on Thermochromic Etching Discs (TED) technology is presented. TED comprises a number of attractive features such as track independency, selective irradiation, a high power laser, and the capability to create useful assay platforms. The analytical versatility of this tool opens up a wide range of possibilities to design new compact disc-based total analysis systems applicable in chemistry and life sciences. In this paper, TED analytical implementation is described and discussed, and their analytical potential is supported by several applications. Microarray immunoassay, immunofiltration assay, solution measurement, and cell culture approaches are herein addressed in order to demonstrate the practical capacity of this system. The analytical usefulness of TED technology is herein demonstrated, describing how to exploit this tool for developing truly integrated analytical systems that provide solutions within the point of care framework. PMID:25310278

  4. Etched graphene quantum dots on hexagonal boron nitride

    Science.gov (United States)

    Engels, S.; Epping, A.; Volk, C.; Korte, S.; Voigtländer, B.; Watanabe, K.; Taniguchi, T.; Trellenkamp, S.; Stampfer, C.

    2013-08-01

    We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9 T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.

  5. Nanoporous silicon membrane for fuel cells realized by electrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Jaouadi, M., E-mail: mohja05.08@hotmail.com [Laboratoire de Photovoltaieque, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95 Hammam-Lif 2050 (Tunisia); Dimassi, W.; Gaidi, M.; Chtourou, R.; Ezzaouia, H. [Laboratoire de Photovoltaieque, Centre de Recherches et des Technologies de l' Energie, Technopole de Borj-Cedria, BP 95 Hammam-Lif 2050 (Tunisia)

    2012-05-15

    In this work we propose a simple method to realize nanoporous silicon proton exchange membranes for fuel cells. The electrochemical etching allows in a single step, the grooving of the membrane and the realization of double porous silicon (PS) layer. We have studied the impact of the different electrochemical conditions: current density, the electrolyte concentration (ethanoic HF) and the anodization time leading to optimal thickness (of 50-90 {mu}m) and nanoporosity for silicon microstructures. The experimental techniques employed for surface studies and depths of groove in silicon are mainly scanning electronic microscopy (SEM) and atomic force microscopy (AFM) which give information of the silicon microstructures. Photoluminescence (PL) measurements of porous silicon membrane were carried out in order to investigate the optical properties of the PS.

  6. Improved track-etch neutron radiography using CR-39

    International Nuclear Information System (INIS)

    Currently most state-of-the-art setups for neutron radiography use scintillator screens and CCD cameras for imaging. However, in some situations it is not possible to use a CCD and alternatives must be considered. One such alternative is the well-established technique of track-etch neutron radiography, which has as main disadvantages requiring a long time for image recording and generating images with a relatively low contrast. In this work we address these negative issues and report significant improvements to recording and digitizing images using an improved setup consisting of an enriched 10B converter, a CR-39 solid state nuclear track detector and a flatbed scanner. The improved setup enables a significant reduction of the fluence required to obtain a neutron radiography image using this technique. Comparisons are made with imaging using two CCD models in the same beam line, so that the results can be extrapolated for other facilities

  7. Laser etching of austenitic stainless steels for micro-structural evaluation

    Science.gov (United States)

    Baghra, Chetan; Kumar, Aniruddha; Sathe, D. B.; Bhatt, R. B.; Behere, P. G.; Afzal, Mohd

    2015-06-01

    Etching is a key step in metallography to reveal microstructure of polished specimen under an optical microscope. A conventional technique for producing micro-structural contrast is chemical etching. As an alternate, laser etching is investigated since it does not involve use of corrosive reagents and it can be carried out without any physical contact with sample. Laser induced etching technique will be beneficial especially in nuclear industry where materials, being radioactive in nature, are handled inside a glove box. In this paper, experimental results of pulsed Nd-YAG laser based etching of few austenitic stainless steels such as SS 304, SS 316 LN and SS alloy D9 which are chosen as structural material for fabrication of various components of upcoming Prototype Fast Breeder Reactor (PFBR) at Kalpakkam India were reported. Laser etching was done by irradiating samples using nanosecond pulsed Nd-YAG laser beam which was transported into glass paneled glove box using optics. Experiments were carried out to understand effect of laser beam parameters such as wavelength, fluence, pulse repetition rate and number of exposures required for etching of austenitic stainless steel samples. Laser etching of PFBR fuel tube and plug welded joint was also carried to evaluate base metal grain size, depth of fusion at welded joint and heat affected zone in the base metal. Experimental results demonstrated that pulsed Nd-YAG laser etching is a fast and effortless technique which can be effectively employed for non-contact remote etching of austenitic stainless steels for micro-structural evaluation.

  8. Influence of hydrofluoric acid concentration on the flexural strength of a feldspathic ceramic.

    Science.gov (United States)

    Venturini, Andressa B; Prochnow, Catina; May, Liliana G; Bottino, Marco C; Felipe Valandro, Luiz

    2015-08-01

    This study evaluated the effects of etching with increasing hydrofluoric (HF) acid concentrations on the roughness and flexural strength of a feldspathic ceramic. One hundred and fifty ceramic specimens (14×4×1.2 mm(2)) were produced from ceramic blocks (VitaBlocks Mark II). All specimens were polished, chamfered and sonically cleaned in isopropyl alcohol. Specimens were randomly divided into 5 groups (n=30): SC (control) no ceramic surface etching; HF1, HF3, HF5 and HF10 ceramic surface etching for 60s with 1%, 3%, 5% and 10% HF acid concentrations, respectively. Profilometry was performed in all specimens to evaluate roughness prior to flexural strength testing. Data were analyzed using one-way ANOVA and Tukey׳s test (α=0.05). Weibull module (m) and characteristic stress (σc) were also determined. HF acid etching, regardless of the concentration used, led to significantly rougher surfaces than the control (pAcid etching significantly reduced the mean flexural strength when compared with the control (143.3 MPa). Weibull modulus of the groups was similar, except for the HF5 group that was higher compared to HF3. Flexural strength was similarly affected by the different HF acid concentrations tested, but roughness increased higher the acid concentration. Ceramic etching led to a significant reduction in strength when compared to the untreated ceramic, regardless of its concentration.

  9. Backside etching of fused silica with ultra-short laser pulses at the interface to absorbing liquid

    Energy Technology Data Exchange (ETDEWEB)

    Boehme, R [Leibniz-Institute for Surface Modification, Permoserstr 15, 04318 Leipzig (Germany); Pissadakis, S [Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, PO Box 1527, 71110, Heraklion (Greece); Ehrhardt, M [Leibniz-Institute for Surface Modification, Permoserstr 15, 04318 Leipzig (Germany); Rudolph, T [Leibniz-Institute for Surface Modification, Permoserstr 15, 04318 Leipzig (Germany); Ruthe, D [Leibniz-Institute for Surface Modification, Permoserstr 15, 04318 Leipzig (Germany); Zimmer, K [Leibniz-Institute for Surface Modification, Permoserstr 15, 04318 Leipzig (Germany)

    2007-04-15

    The etching of fused silica substrates by employing the process of laser-induced backside wet etching (LIBWE) using the laser radiation of a 248nm, 500fs excimer laser and a 775nm, 130fs Ti:sapphire is presented here for the first time. Etched volume results are presented in combination with topological investigations of the etched areas performed by SEM scans, revealing new aspects of the nature and products of the process.

  10. Surface changes of biopolymers PHB and PLLA induced by Ar{sup +} plasma treatment and wet etching

    Energy Technology Data Exchange (ETDEWEB)

    Slepičková Kasálková, N. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Slepička, P., E-mail: petr.slepicka@vscht.cz [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Sajdl, P. [Department of Power Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Švorčík, V. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

    2014-08-01

    Polymers, especially group of biopolymers find potential application in a wide range of disciplines due to their biodegradability. In biomedical applications these materials can be used as a scaffold or matrix. In this work, the influence of the Ar{sup +} plasma treatment and subsequent wet etching (acetone/water) on the surface properties of polymers were studied. Two biopolymers – polyhydroxybutyrate with 8% polyhydroxyvalerate (PHB) and poly-L-lactic acid (PLLA) were used in these experiments. Modified surface layers were analyzed by different methods. Surface wettability was characterized by determination of water contact angle. Changes in elemental composition of modified surfaces were performed by X-ray Photoelectron Spectroscopy (XPS). Surface morphology and roughness was examined using Atomic Force Microscopy (AFM). Gravimetry method was used to study the mass loss. It was found that the modification from both with plasma and wet etching leads to dramatic changes of surface properties (surface chemistry, morphology and roughness). Rate of changes of these features strongly depends on the modification parameters.

  11. Fabrication of Meso-Porous Sintered Metal Thin Films by Selective Etching of Silica Based Sacrificial Template

    Directory of Open Access Journals (Sweden)

    Ludovic F. Dumee

    2014-08-01

    Full Text Available Meso-porous metal materials have enhanced surface energies offering unique surface properties with potential applications in chemical catalysis, molecular sensing and selective separation. In this paper, commercial 20 nm diameter metal nano-particles, including silver and copper were blended with 7 nm silica nano-particles by shear mixing. The resulted powders were cold-sintered to form dense, hybrid thin films. The sacrificial silica template was then removed by selective etching in 12 wt% hydrofluoric acid solutions for 15 min to reveal a purely metallic meso-porous thin film material. The impact of the initial silica nano-particle diameter (7–20 nm as well as the sintering pressure (5–20 ton·m−2 and etching conditions on the morphology and properties of the final nano-porous thin films were investigated by porometry, pyknometery, gas and liquid permeation and electron microscopy. Furthermore, the morphology of the pores and particle aggregation during shear mixing were assessed through cross-sectioning by focus ion beam milling. It is demonstrated that meso-pores ranging between 50 and 320 nm in average diameter and porosities up to 47% can be successfully formed for the range of materials tested.

  12. Effect of EDTA Conditioning and Carbodiimide Pretreatment on the Bonding Performance of All-in-One Self-Etch Adhesives

    Directory of Open Access Journals (Sweden)

    Shipra Singh

    2015-01-01

    Full Text Available Objective. This study evaluated the effect of ethylenediaminetetraacetic acid (EDTA conditioning and carbodiimide (EDC pretreatment on the shear bond strength of two all-in-one self-etch adhesives to dentin. Methods. Flat coronal dentin surfaces were prepared on one hundred and sixty extracted human molars. Teeth were randomly divided into eight groups according to two different self-etch adhesives used [G-Bond and OptiBond-All-In-One] and four different surface pretreatments: (a adhesive applied following manufacturer’s instructions; (b dentin conditioning with 24% EDTA gel prior to application of adhesive; (c EDC pretreatment followed by application of adhesive; (d application of EDC on EDTA conditioned dentin surface followed by application of adhesive. Composite restorations were placed in all the samples. Ten samples from each group were subjected to immediate and delayed (6-month storage in artificial saliva shear bond strength evaluation. Data collected was subjected to statistical analysis using three-way ANOVA and post hoc Tukey’s test at a significance level of p<0.05.  Results and Conclusion. EDTA preconditioning as well as EDC pretreatment alone had no significant effect on the immediate and delayed bond strengths of either of the adhesives. However, EDC pretreatment on EDTA conditioned dentin surface resulted in preservation of resin-dentin bond strength of both adhesives with no significant fall over six months.

  13. Synthesis of blue emitting InP/ZnS quantum dots through control of competition between etching and growth

    International Nuclear Information System (INIS)

    Blue (<480 nm) emitting Cd-free quantum dots (QDs) are in great demand for various applications. However, their synthesis has been challenging. Here we present blue emitting InP/ZnS core/shell QDs with a band edge emission of 475 nm and a full width at half maximum of 39 nm (215 meV) from their quantum confined states. The drastic temperature drop immediately after mixing of the precursors and holding them at a temperature below 150 °C was the critical factor for the synthesis of blue emitting QDs, because the blue QDs are formed by the etching of ultra-small InP cores by residual acetic acid below 150 °C. Etching was dominant at temperatures below 150 °C, whereas growth was dominant at temperatures above 150 °C. ZnS shells were formed successfully at 150 °C, yielding blue emitting InP/ZnS QDs. The colour of the InP/ZnS QDs depicted on the CIE 1931 chromaticity diagram is located close to the edge, indicating a pure blue colour compared to other InP-based QDs. (paper)

  14. Effect of TMAH Etching Duration on the Formation of Silicon Nano wire Transistor Patterned by AFM Nano lithography

    International Nuclear Information System (INIS)

    Atomic force microscopy (AFM) lithography was applied to produce nano scale pattern for silicon nano wire transistor fabrication. This technique takes advantage of imaging facility of AFM and the ability of probe movement controlling over the sample surface to create nano patterns. A conductive AFM tip was used to grow the silicon oxide nano patterns on silicon on insulator (SOI) wafer. The applied tip-sample voltage and writing speed were well controlled in order to form pre-designed silicon oxide nano wire transistor structures. The effect of tetra methyl ammonium hydroxide (TMAH) etching duration on the oxide covered silicon nano wire transistor structure has been investigated. A completed silicon nano wire transistor was obtained by removing the oxide layer via hydrofluoric acid etching process. The fabricated silicon nano wire transistor consists of a silicon nano wire that acts as a channel with source and drain pads. A lateral gate pad with a nano wire head was fabricated very close to the channel in the formation of transistor structures. (author)

  15. A DLVO model for catalyst motion in metal-assisted chemical etching based upon controlled out-of-plane rotational etching and force-displacement measurements

    Science.gov (United States)

    Hildreth, Owen J.; Rykaczewski, Konrad; Fedorov, Andrei G.; Wong, Ching P.

    2013-01-01

    Metal-assisted Chemical Etching of silicon has recently emerged as a powerful technique to fabricate 1D, 2D, and 3D nanostructures in silicon with high feature fidelity. This work demonstrates that out-of-plane rotational catalysts utilizing polymer pinning structures can be designed with excellent control over rotation angle. A plastic deformation model was developed establishing that the catalyst is driven into the silicon substrate with a minimum pressure differential across the catalyst thickness of 0.4-0.6 MPa. Force-displacement curves were gathered between an Au tip and Si or SiO2 substrates under acidic conditions to show that Derjaguin and Landau, Verwey and Overbeek (DLVO) based forces are capable of providing restorative forces on the order of 0.2-0.3 nN with a calculated 11-18 MPa pressure differential across the catalyst. This work illustrates that out-of-plane rotational structures can be designed with controllable rotation and also suggests a new model for the driving force for catalyst motion based on DLVO theory. This process enables the facile fabrication of vertically aligned thin-film metallic structures and scalloped nanostructures in silicon for applications in 3D micro/nano-electromechanical systems, photonic devices, nanofluidics, etc.Metal-assisted Chemical Etching of silicon has recently emerged as a powerful technique to fabricate 1D, 2D, and 3D nanostructures in silicon with high feature fidelity. This work demonstrates that out-of-plane rotational catalysts utilizing polymer pinning structures can be designed with excellent control over rotation angle. A plastic deformation model was developed establishing that the catalyst is driven into the silicon substrate with a minimum pressure differential across the catalyst thickness of 0.4-0.6 MPa. Force-displacement curves were gathered between an Au tip and Si or SiO2 substrates under acidic conditions to show that Derjaguin and Landau, Verwey and Overbeek (DLVO) based forces are capable of

  16. Thinning of CIGS solar cells: Part I: Chemical processing in acidic bromine solutions

    Energy Technology Data Exchange (ETDEWEB)

    Bouttemy, M.; Tran-Van, P. [Institut Lavoisier de Versailles (ILV-UMR 8180 CNRS/UVSQ), 45 av. des Etats Unis, 78035 Versailles (France); Gerard, I., E-mail: gerard@chimie.uvsq.fr [Institut Lavoisier de Versailles (ILV-UMR 8180 CNRS/UVSQ), 45 av. des Etats Unis, 78035 Versailles (France); Hildebrandt, T.; Causier, A. [Institut Lavoisier de Versailles (ILV-UMR 8180 CNRS/UVSQ), 45 av. des Etats Unis, 78035 Versailles (France); Pelouard, J.L.; Dagher, G. [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), route de Nozay 91460 Marcoussis (France); Jehl, Z.; Naghavi, N. [Institut de Recherche et Developpement sur l' Energie Photovoltaique (IRDEP -UMR 7174 CNRS/EDF/Chimie-ParisTech), 6 quai Watier, 78401 Chatou (France); Voorwinden, G.; Dimmler, B. [Wuerth Elektronik Research GmbH, Industriestr. 4, 70565 Stuttgart (Germany); Powalla, M. [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung (ZSW), Industriestr. 6, 70565 Stuttgart (Germany); Guillemoles, J.F. [Institut de Recherche et Developpement sur l' Energie Photovoltaique (IRDEP -UMR 7174 CNRS/EDF/Chimie-ParisTech), 6 quai Watier, 78401 Chatou (France); Lincot, D. [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), route de Nozay 91460 Marcoussis (France); Etcheberry, A. [Institut Lavoisier de Versailles (ILV-UMR 8180 CNRS/UVSQ), 45 av. des Etats Unis, 78035 Versailles (France)

    2011-08-31

    CIGSe absorber was etched in HBr/Br{sub 2}/H{sub 2}O to prepare defined thicknesses of CIGSe between 2.7 and 0.5 {mu}m. We established a reproducible method of reducing the absorber thickness via chemical etching. We determine the dissolution kinetics rate of CIGSe using trace analysis by graphite furnace atomic absorption spectrometry of Ga and Cu. The roughness of the etching surface decreases during the first 500 nm of the etching to a steady state value of the root-mean-square roughness near 50 nm. X-ray photoelectron spectroscopy analyses demonstrate an etching process occurring with a constant chemical composition of the treated surface acidic bromine solutions provide a controlled chemical thinning process resulting in an almost flat surface and a very low superficial Se{sup 0} enrichment.

  17. Processing of laser surface micro-texturing on surface of SiC mechanical seal%SiC机械密封环表面微织构激光加工工艺

    Institute of Scientific and Technical Information of China (English)

    符永宏; 王祖权; 纪敬虎; 杨东燕; 符昊

    2012-01-01

    The laser surface texturing on the SiC mechanical seal samples were studied by using a Q-switched diode-pumped Nd; YAG laser and the laser processing technique called " single pulse at a time, repeated at intervals" , and the geometric parameters of texture were measured by means of Wy-ko-NTl 100 surface profiler, further the effect of laser processing parameters (pumping current, repetition frequency, number of excitations, scanning speed) on the geometrical parameters and quality of micro-textures was analyzed. The results show that pumping current and number of excitations have an evident influence on the micro-pore processing quality, and repetition frequency is relatively small. However,pumping current, scanning speed and repetition frequency can greatly affect micro-groove processing quality. High quality micro-textures can be obtained via optimizing the laser processing parameters. For processing micro-dimple, the optimal laser parameters, such as pumping current and number of excitations are 14 -16 A, 1 - 10, for processing micro-groove. However, the optimal pumping current, repetition frequency and scanning speed are 14-16 A, 1 500 -2 500 Hz and 8-25 mm/s, respectively.%采用声光调Q二极管泵浦Nd:YAG激光器,利用“单脉冲同点间隔多次”激光加工工艺,对碳化硅机械密封试样端面进行激光表面微织构的加工工艺试验研究.采用Wyko-NT1100表面形貌三维测量仪测量了微织构的几何形貌参数,分析了泵浦电流、脉冲重复频率、脉冲重复次数和扫描速度等激光加工工艺参数对微凹腔和微凹槽织构的几何形貌参数与加工质量的影响.结果表明,泵浦电流和脉冲重复次数对微凹腔的几何形貌参数与加工质量影响较大,而重复频率的影响则相对较小;泵浦电流、扫描速度和重复频率对微凹槽的加工质量均有较大影响.通过优化激光加工工艺参数组合,可以加工出较优的微观几何形貌.加工微凹腔

  18. 18CrMnTi钢表面激光微造型的仿生工艺%Bionic technique of laser micro-texturing on 18CrMnTi steel surface

    Institute of Scientific and Technical Information of China (English)

    钱良存; 洪炜宁; 邵陆寿; 袁根福; 梁华琪

    2011-01-01

    为了探讨激光微造型表面仿生非光滑效应中粗糙度提高的工艺,运用SEM扫描电镜和图像处理技术提取荷叶表面微纳米形貌特征,在犁铧钢(18CrMnTi)表面进行激光微造型表面仿生正交试验研究.研究表明,图像处理中Sobel边缘算法有效地提取了SEM图片表面微纳米形貌层次特征,图像阈值取255时,提取表面形貌特征最多,犁铧钢仿生表面基本上再现了荷叶表面形貌:激光表面微造型极显著因素的主次关系是阈值>打标次数>电流强度,表面仿生最优值处的微造型粗糙度参数,即表面轮廓算术平均偏差(Ra)、微观不平度十点高度(Rz)和最大轮廓高度(Ry)提高的倍数分别为86.11、232.29和116.06.研究结果为激光微造型表面仿生多层次提取表面形貌信息和提高表面粗糙度工艺提供参考.%In order to explore surface roughness technology in non-smooth bionic affection by laser micro-texturing, the orthogonal experiment was made in the plowshare (18CrMnTi) steel bionic surface, based on scan electron microscopy (SEM) photos and the technique of image processing to extract micro-nano-morphology information form lotus leaf surface. Results showed that in the processing of image Sobel edge operator was the most effective method for extracting layers information of SEM micro-nano-morphology photos. The extracted morphology information was up to maximum value at the point of threshold value 255, and surface morphology of lotus leaf was textured in the plowshare surface. The relationship of significant experimental factors was, threshold value > number of marking > current intensity. The optimal values of roughness parameters, I.e. Ra, Rz and Ry increased by 86.11, 232.29 and 116.06 times respectively. This research has significance in extracting the surface information of layers morphology and enhancing the surface roughness by laser micro-texturing bionic surface.

  19. Etch-Tuning and Design of Silicon Nitride Photonic Crystal Reflectors

    CERN Document Server

    Bernard, Simon; Dumont, Vincent; Peter, Yves-Alain; Sankey, Jack C

    2016-01-01

    By patterning a freestanding dielectric membrane into a photonic crystal reflector (PCR), it is possible to resonantly enhance its normal-incidence reflectivity, thereby realizing a thin, single-material mirror. In many PCR applications, the operating wavelength (e.g. that of a low-noise laser or emitter) is not tunable, imposing tolerances on crystal geometry that are not reliably achieved with standard nanolithography. Here we present a gentle technique to finely tune the resonant wavelength of a \\SiN PCR using iterative hydrofluoric acid etches. With little optimization, we achieve a 57-nm-thin photonic crystal having an operating wavelength within 0.15 nm (0.04 resonance linewidths) of our target (1550 nm). Our thin structure exhibits a broader and less pronounced transmission dip than is predicted by plane wave simulations, and we identify two effects leading to these discrepancies, both related to the divergence angle of a collimated laser beam. To overcome this limitation in future devices, we distill ...

  20. Etching, micro hardness and laser damage threshold studies of a nonlinear optical material L-valine

    Science.gov (United States)

    Anbuchezhiyan, M.; Ponnusamy, S.; Muthamizhchelvan, C.; Kanakam, C. C.; Singh, S. P.; Pal, P. K.; Datta, P. K.

    2012-04-01

    A nonlinear optical crystal of L-valine was grown from an aqueous solution containing a small amount of phosphoric acid by the slow evaporation method. The grown crystal was characterized by a single crystal X-ray diffraction to determine the unit cell parameters. The powder X-ray diffraction analysis also confirmed the lattice parameters to be a = 9.6687(7) Å, b = 5.2709(4) Å, c = 12.0371(10) Å and β = 90.805(4)°. The results of the Inductively Coupled Plasma Optical Emission Spectrometry (ICPOES) indicate the presence of a small amount of phosphorus in the grown crystal. The Vickers micro hardness test was performed to study the mechanical strength of the crystals. Chemical etching studies were carried out to analyze the dislocation structure. The laser damaged threshold of the grown crystal was measured to be 11.11 GW/cm2 for 10 ns pulse at 1064 nm, which is higher than that of the standard nonlinear optical crystals like KDP. Second harmonic generation of the grown crystals was also 1.44 times that of KDP.

  1. Structural and optical characteristics of porous InAlGaN prepared by photoelectrochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Radzali, R., E-mail: rosfariza074@ppinang.uitm.edu.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA, Jalan Permatang Pauh, 13500 Permatang Pauh, Pulau Pinang (Malaysia); Hassan, Z., E-mail: zai@usm.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Zainal, N., E-mail: norzaini@usm.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Yam, F.K., E-mail: yamfk@usm.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2015-02-15

    Highlights: • Porous InAlGaN was successfully fabricated by photoelectrochemical etching for the first time. • Etching time influenced the pore density and surface roughness of the sample. • Reduction of dislocation density and strain were observed in the porous samples. - Abstract: The effect of etching duration on the porous structure of quaternary III-nitride alloy, InAlGaN prepared using the photoelectrochemical etching technique was evaluated in this study. Field emission scanning electron microscopy (FE-SEM) revealed that the pore density of the sample increased with increased etching duration, as did the root mean square (RMS) roughness, as measured by atomic force microscopy (AFM). The high resolution X-ray diffraction (HR-XRD) rocking curve measurement showed that dislocation density was reduced in samples etched for 15 and 20 min. In the Raman spectra, the InGaN-like E{sub 2}(high) phonon mode of porous InAlGaN samples exhibited red shift characteristic relative to the non-porous sample due to relaxation of compressive stress of the porous sample. These results illustrate that etching duration affects the structural and optical properties of the InAlGaN sample.

  2. Localized etching of polymer films using an atmospheric pressure air microplasma jet

    International Nuclear Information System (INIS)

    A direct-write process device based on the atmospheric pressure air microplasma jet (AμPJ) has been developed for the localized etching of polymer films. The plasma was generated by the air discharge ejected out through a tip-nozzle (inner diameter of 100 μm), forming the microplasma jet. The AμPJ was capable of reacting with the polymer surface since it contains a high concentration of oxygen reactive species and thus resulted in the selective removal of polymer films. The experimental results demonstrated that the AμPJ could fabricate different microstructures on a parylene-C film without using any masks or causing any heat damage. The etch rate of parylene-C reached 5.1 μm min−1 and microstructures of different depth and width could also be realized by controlling two process parameters, namely, the etching time and the distance between the nozzle and the substrate. In addition, combining XPS analysis and oxygen-induced chemical etching principles, the potential etching mechanism of parylene-C by the AμPJ was investigated. Aside from the etching of parylene-C, micro-holes on the photoresist and polyimide film were successfully created by the AμPJ. In summary, maskless pattern etching of polymer films could be achieved using this AμPJ. (paper)

  3. Fabrication of porous silicon by metal-assisted etching using highly ordered gold nanoparticle arrays

    Science.gov (United States)

    Scheeler, Sebastian P.; Ullrich, Simon; Kudera, Stefan; Pacholski, Claudia

    2012-08-01

    A simple method for the fabrication of porous silicon (Si) by metal-assisted etching was developed using gold nanoparticles as catalytic sites. The etching masks were prepared by spin-coating of colloidal gold nanoparticles onto Si. An appropriate functionalization of the gold nanoparticle surface prior to the deposition step enabled the formation of quasi-hexagonally ordered arrays by self-assembly which were translated into an array of pores by subsequent etching in HF solution containing H2O2. The quality of the pattern transfer depended on the chosen preparation conditions for the gold nanoparticle etching mask. The influence of the Si surface properties was investigated by using either hydrophilic or hydrophobic Si substrates resulting from piranha solution or HF treatment, respectively. The polymer-coated gold nanoparticles had to be thermally treated in order to provide a direct contact at the metal/Si interface which is required for the following metal-assisted etching. Plasma treatment as well as flame annealing was successfully applied. The best results were obtained for Si substrates which were flame annealed in order to remove the polymer matrix - independent of the substrate surface properties prior to spin-coating (hydrophilic or hydrophobic). The presented method opens up new resources for the fabrication of porous silicon by metal-assisted etching. Here, a vast variety of metal nanoparticles accessible by well-established wet-chemical synthesis can be employed for the fabrication of the etching masks.

  4. Using an energized oxygen micro-jet for improved graphene etching by focused electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Songkil; Henry, Mathias [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Fedorov, Andrei G., E-mail: agf@gatech.edu [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Parker H. Petit Institute for Bioengineering and Bioscience, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

    2015-12-07

    We report on an improved Focused Electron Beam Induced Etching (FEBIE) process, which exploits heated oxygen delivery via a continuous supersonic micro-jet resulting in faster graphene patterning and better etch feature definition. Positioning a micro-jet in close proximity to a graphene surface with minimal jet spreading due to a continuous regime of gas flow at the exit of the 10 μm inner diameter capillary allows for focused exposure of the surface to reactive oxygen at high mass flux and impingement energy of a supersonic gas stream localized to a small etching area exposed to electron beam. These unique benefits of focused supersonic oxygen delivery to the surface enable a dramatic increase in the etch rate of graphene with no parasitic carbon “halo” deposition due to secondary electrons from backscattered electrons (BSE) in the area surrounding the etched regions. Increase of jet temperature via local nozzle heating provides means for enhancing kinetic energy of impinging oxygen molecules, which further speed up the etch, thus minimizing the beam exposure time and required electron dose, before parasitic carbon film deposition due to BSE mediated decomposition of adsorbed hydrocarbon contaminants has a measurable impact on quality of graphene etched features. Interplay of different physical mechanisms underlying an oxygen micro-jet assisted FEBIE process is discussed with support from experimental observations.

  5. Using an energized oxygen micro-jet for improved graphene etching by focused electron beam

    International Nuclear Information System (INIS)

    We report on an improved Focused Electron Beam Induced Etching (FEBIE) process, which exploits heated oxygen delivery via a continuous supersonic micro-jet resulting in faster graphene patterning and better etch feature definition. Positioning a micro-jet in close proximity to a graphene surface with minimal jet spreading due to a continuous regime of gas flow at the exit of the 10 μm inner diameter capillary allows for focused exposure of the surface to reactive oxygen at high mass flux and impingement energy of a supersonic gas stream localized to a small etching area exposed to electron beam. These unique benefits of focused supersonic oxygen delivery to the surface enable a dramatic increase in the etch rate of graphene with no parasitic carbon “halo” deposition due to secondary electrons from backscattered electrons (BSE) in the area surrounding the etched regions. Increase of jet temperature via local nozzle heating provides means for enhancing kinetic energy of impinging oxygen molecules, which further speed up the etch, thus minimizing the beam exposure time and required electron dose, before parasitic carbon film deposition due to BSE mediated decomposition of adsorbed hydrocarbon contaminants has a measurable impact on quality of graphene etched features. Interplay of different physical mechanisms underlying an oxygen micro-jet assisted FEBIE process is discussed with support from experimental observations

  6. Microstructuring of fused silica by laser-induced backside wet etching using picosecond laser pulses

    International Nuclear Information System (INIS)

    The laser-induced backside wet etching (LIBWE) is an advanced laser processing method used for structuring transparent materials. LIBWE with nanosecond laser pulses has been successfully demonstrated for various materials, e.g. oxides (fused silica, sapphire) or fluorides (CaF2, MgF2), and applied for the fabrication of microstructures. In the present study, LIBWE of fused silica with mode-locked picosecond (tp = 10 ps) lasers at UV wavelengths (λ1 = 355 nm and λ2 = 266 nm) using a (pyrene) toluene solution was demonstrated for the first time. The influence of the experimental parameters, such as laser fluence, pulse number, and absorbing liquid, on the etch rate and the resulting surface morphology were investigated. The etch rate grew linearly with the laser fluence in the low and in the high fluence range with different slopes. Incubation at low pulse numbers as well as a nearly constant etch rate after a specific pulse number for example were observed. Additionally, the etch rate depended on the absorbing liquid used; whereas the higher absorption of the admixture of pyrene in the used toluene enhances the etch rate and decreases the threshold fluence. With a λ1 = 266 nm laser set-up, an exceptionally smooth surface in the etch pits was achieved. For both wavelengths (λ1 = 266 nm and λ2 = 355 nm), LIPSS (laser-induced periodic surface structures) formation was observed, especially at laser fluences near the thresholds of 170 and 120 mJ/cm2, respectively.

  7. Level set simulations of the anisotropic wet etching process for device fabrication in nanotechnologies

    Directory of Open Access Journals (Sweden)

    Rađenović Branislav

    2010-01-01

    Full Text Available Chemical etching is employed as micromachining manufacturing process to produce micron-size components. As a semiconductor wafer is extremely expensive due to many processing steps involved in the making thereof, the need to critically control the etching end point in an etching process is highly desirable. It was found that not only the etchant and temperature determine the exact anisotropy of etched silicon. The angle between the silicon surface and the mask was also shown to play an important role. In this paper, angular dependence of the etching rate is calculated on the base of the silicon symmetry properties, by means of the interpolation technique using experimentally obtained values of the principal <100>, <110>, <111> directions in KOH solutions. The calculations are performed using an extension of the sparse field method for solving three dimensional (3D level set equations that describe the morphological surface evolution during etching process. The analysis of the obtained results confirm that regardless of the initial shape the profile evolution ends with the crystal form composed of the fastest etching planes, {110} in our model.

  8. Localized etching of polymer films using an atmospheric pressure air microplasma jet

    Science.gov (United States)

    Guo, Honglei; Liu, Jingquan; Yang, Bin; Chen, Xiang; Yang, Chunsheng

    2015-01-01

    A direct-write process device based on the atmospheric pressure air microplasma jet (AμPJ) has been developed for the localized etching of polymer films. The plasma was generated by the air discharge ejected out through a tip-nozzle (inner diameter of 100 μm), forming the microplasma jet. The AμPJ was capable of reacting with the polymer surface since it contains a high concentration of oxygen reactive species and thus resulted in the selective removal of polymer films. The experimental results demonstrated that the AμPJ could fabricate different microstructures on a parylene-C film without using any masks or causing any heat damage. The etch rate of parylene-C reached 5.1 μm min-1 and microstructures of different depth and width could also be realized by controlling two process parameters, namely, the etching time and the distance between the nozzle and the substrate. In addition, combining XPS analysis and oxygen-induced chemical etching principles, the potential etching mechanism of parylene-C by the AμPJ was investigated. Aside from the etching of parylene-C, micro-holes on the photoresist and polyimide film were successfully created by the AμPJ. In summary, maskless pattern etching of polymer films could be achieved using this AμPJ.

  9. Argon-dominated plasma beam generated by filtered vacuum arc and its substrate etching

    International Nuclear Information System (INIS)

    A new technique to etch a substrate as a pre-treatment prior to functional film deposition was developed using a filtered vacuum arc plasma. An Ar-dominated plasma beam was generated from filtered carbon arc plasma by introducing appropriate flow rate of Ar gas in a T-shape filtered arc deposition (T-FAD) system. The radiation spectra emitted from the filtered plasma beam in front of a substrate table were measured. The substrate was etched by the Ar-dominated plasma beam. The principal results are summarized as follows. At a high flow rate of Ar gas (50 ml/min), when the bias was applied to the substrate, the plasma was attracted toward the substrate table and the substrate was well etched without film formation on the substrate. Super hard alloy (WC), bearing steel (SUJ2), and Si wafer were etched by the Ar-dominated plasma beam. The etching rate was dependent on the kind of substrate. The roughness of the substrate increased, when the etching rate was high. A pulse bias etched the substrate without roughening the substrate surface excessively.

  10. Multi-layer VEB modeling: capturing interlayer etch process effects for multi-patterning process

    Science.gov (United States)

    Hu, Lin; Jung, Sunwook; Li, Jianliang; Kim, Young; Bar, Yuval; Lobb, Granger; Liang, Jim; Ogino, Atsushi; Sturtevant, John; Bailey, Todd

    2016-03-01

    Self-Aligned Via (SAV) process is commonly used in back end of line (BEOL) patterning. As the technology node advances, tightening CD and overlay specs require continuous improvement in model accuracy of the SAV process. Traditional single layer Variable Etch Bias (VEB) model is capable of describing the micro-loading and aperture effects associated with the reactive ion etch (RIE), but it does not include effects from under layers. For the SAV etch, a multi-layer VEB model is needed to account for the etch restriction from metal trenches. In this study, we characterize via post-etch dimensions through pitch and through metal trench widths, and show that VEB model prediction accuracy for SAV CDs after SAV formation can be significantly improved by applying a multi-layer scheme. Using a multi-layer VEB, it is demonstrated that the output via size changes with varying trench dimensions, which matches the silicon results. The model also reports via shape post-etch as a function of trench environment, where elliptical vias are correctly produced. The multi-layer VEB model can be applied both multi-layer correction and verification in full chip flow. This paper will also suggest that the multi-layer VEB model can be used in other FEOL layers with interlayer etch process effects, such as gate cut, to support the robustness of new model.

  11. Using an energized oxygen micro-jet for improved graphene etching by focused electron beam

    Science.gov (United States)

    Kim, Songkil; Henry, Mathias; Fedorov, Andrei G.

    2015-12-01

    We report on an improved Focused Electron Beam Induced Etching (FEBIE) process, which exploits heated oxygen delivery via a continuous supersonic micro-jet resulting in faster graphene patterning and better etch feature definition. Positioning a micro-jet in close proximity to a graphene surface with minimal jet spreading due to a continuous regime of gas flow at the exit of the 10 μm inner diameter capillary allows for focused exposure of the surface to reactive oxygen at high mass flux and impingement energy of a supersonic gas stream localized to a small etching area exposed to electron beam. These unique benefits of focused supersonic oxygen delivery to the surface enable a dramatic increase in the etch rate of graphene with no parasitic carbon "halo" deposition due to secondary electrons from backscattered electrons (BSE) in the area surrounding the etched regions. Increase of jet temperature via local nozzle heating provides means for enhancing kinetic energy of impinging oxygen molecules, which further speed up the etch, thus minimizing the beam exposure time and required electron dose, before parasitic carbon film deposition due to BSE mediated decomposition of adsorbed hydrocarbon contaminants has a measurable impact on quality of graphene etched features. Interplay of different physical mechanisms underlying an oxygen micro-jet assisted FEBIE process is discussed with support from experimental observations.

  12. Optical Characterization of Plasma Generated in a Commercial Grade Plasma Etching System

    Science.gov (United States)

    Hardy, Ashley; Drake, Dereth

    2015-11-01

    The use of plasma for etching and cleaning of many types of metal surfaces is becoming more prominent in industry. This is primarily due to the fact that plasma etching can reduce the amount of time necessary to clean/etch the surface and does not require large amounts of environmentally hazardous chemicals. Most plasma etching systems are designed and built in academic institutions. These systems provide reasonable etching rates and easy accessibility for monitoring plasma parameters. The downside is that the cost is typically high. Recently a number of commercial grade plasma etchers have been introduced on the market. These etching systems cost near a fraction of the price, making them a more economical choice for researchers in the field. However, very few academics use these devices because their effectiveness has not yet been adequately verified in the current literature. We will present the results from experiments performed in a commercial grade plasma etching system, including analysis of the pulse characteristics observed by a photo diode and the plasma parameters obtained with optical emission spectroscopy.

  13. 微织构刀具正交切削Ti6Al4V的试验研究%Experimental Study on Orthogonal Cutting of Ti6Al4V with Micro-textured Tool

    Institute of Scientific and Technical Information of China (English)

    戚宝运; 李亮; 何宁; 赵威; 王震

    2011-01-01

    The appearance and development of biomimetics in tribology brings a new research direction for antifriction technology of tool.The orthogonal experiments of the cutting performance of micro-textured cutting tool in machining titanium alloy was presented.Micro-grooves were made using laser on the rake face of uncoated tungsten carbide cutting inserts.Minimal quantity lubricant(MQL) and cryogenic minimal quantity lubricant(CMQL) were used.Three cutting force components were measured and compared.Tool-chip contact length and worn surfaces were examined using scanning electron microscopy(SEM).It was found that under the lubricated condition the surface micro-grooves could effectively improve the friction status between the tool and chip,thereby reducing cutting force and cutting temperature.The surface micro-grooves could also improve the adhesion of titanium alloy.Without lubricant,micro-grooves still had a certain "lubrication" effect.%仿生摩擦学的出现,为刀具减摩技术提出了新的研究方向,通过钛合金的正交切削试验研究了表面微织构刀具在微量润滑和无润滑剂条件下的减摩性能.结果表明:表面微沟槽在润滑剂条件下可以有效地改善刀屑之间的摩擦,降低切削力与切削温度,同时表面微沟槽还可以改善钛合金的粘结现象;在无润滑剂条件下,微沟槽依然具有一定的"润滑"作用.

  14. 岩石表面微观纹理的激光测量方法及分形%Measurement of micro-texture of rock using laser and fractal character

    Institute of Scientific and Technical Information of China (English)

    符慧林; 孙杨勇; 周育才

    2011-01-01

    开发了一种采用激光三角测量技术的微观测量系统,对花岗岩和玄武岩等岩石表面微观纹理进行测量,分析了测量系统各种误差的干扰因素.利用Matlab平台,采用盒子计数法对各种表面曲线进行分析,得出表面微观纹理的分形维数.研究结果表明,玄武岩、花岗岩和卵石的表面微观纹理粗糙程度由复杂到简单.并提出了路面石料选材的分形维数指标,可应用在路面抗滑表层的石料设计选材上.%A micro-distance measurement system was developed using laser triangulation technique,measuring the surface's micro-texture of granite, basalt and other coarse aggregate commonly used on the road, and the system errors such as interference with a variety of factors were analyzed. Using MATLAB platform, analysis the original curve and its data of variety surfaces by Box-counting method, and derived the fractal dimension of surface texture, as a result, for basalt, granite and gravel, and the surface micro-roughness from a complex texture to the simple. A new index of the fractal dimension on pavement aggregate selection was made, and it can be applied to select the stone used on the surface of pavement.

  15. The influence of chemical etching time on efficiency of radon detection using CR-39

    Energy Technology Data Exchange (ETDEWEB)

    Reway, Adriana P.; Kappke, Jaqueline; Narloch, Danielle C., E-mail: adrireway@hotmail.com, E-mail: jaquelinekappke@gmail.com, E-mail: daninarloch@hotmail.com [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Departamento Academico de Fisica; Del Claro, Flavia; Paschuk, Sergei A., E-mail: flaviadelclaro@gmail.com, E-mail: spaschuk@gmail.com [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Programa de Pos-Graduaca em Engenharia Eletrica e Informatica Industrial; Correa, Janine N., E-mail: janine_nicolosi@hotmail.com [Universidade Tecnologica Federal do Parana (UTFPR), Curitiba, PR (Brazil). Departamento Academico de Construcao Civil

    2015-07-01

    Natural radiation is the principal source of human exposure to ionizing radiation. Radon is noble radioactive gas that emanates from the soil and rocks entering the atmosphere of dwellings where it could be accumulated. The inhalation of {sup 222}Rn represents a significant health risk. Solid-State Nuclear Track Detectors (SSNTD) represents an efficient method for alpha particle detection and measurements of the activity concentration of {sup 222}Rn. The aim of present work was to study the etching time impact on CR-39 efficiency in radon activity measurements. The investigation was performed using 80 CR-39 detectors, which were exposed to a source of radon. After the exposition, alpha particle tracks development was achieved by chemical etching using 6.25M NaOH solution and ethanol (2%) at 70°C. Etching alpha particle tracks were identified and counted manually using the optical microscope with magnification of 100x and glass overlay mask. The etching time ranged from 7 to 14 hours. The results show that there is an increase in the number of visible tracks with increased etching time. The number of traces obtained for 7 hours and 8 hours of revelation was 1430 +/- 90 and 2090 +/- 160, respectively. However, for etching time of 13 and 14 hours was not observed statistical increase in the number of visible tracks. The number of tracks in this situation was 3630 +/- 180 and 3870 +/- 160 to 13 and 14 hours etching. Thus, for assumed etching parameters, the etching optimal time was observed 14 hours. (author)

  16. Continuous Process for the Etching, Rinsing and Drying of MEMS Using Supercritical Carbon Dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Min, Seon Ki; Han, Gap Su; You, Seong-sik [Korea University of Technology and Education, Cheonan (Korea, Republic of)

    2015-10-15

    The previous etching, rinsing and drying processes of wafers for MEMS (microelectromechanical system) using SC-CO{sub 2} (supercritical-CO{sub 2}) consists of two steps. Firstly, MEMS-wafers are etched by organic solvent in a separate etching equipment from the high pressure dryer and then moved to the high pressure dryer to rinse and dry them using SC-CO{sub 2}. We found that the previous two step process could be applied to etch and dry wafers for MEMS but could not confirm the reproducibility through several experiments. We thought the cause of that was the stiction of structures occurring due to vaporization of the etching solvent during moving MEMS wafer to high pressure dryer after etching it outside. In order to improve the structure stiction problem, we designed a continuous process for etching, rinsing and drying MEMS-wafers using SC-CO{sub 2} without moving them. And we also wanted to know relations of states of carbon dioxide (gas, liquid, supercritical fluid) to the structure stiction problem. In the case of using gas carbon dioxide (3 MPa, 25 .deg. C) as an etching solvent, we could obtain well-treated MEMS-wafers without stiction and confirm the reproducibility of experimental results. The quantity of rinsing solvent used could be also reduced compared with the previous technology. In the case of using liquid carbon dioxide (3 MPa, 5 .deg. C), we could not obtain well-treated MEMS-wafers without stiction due to the phase separation of between liquid carbon dioxide and etching co-solvent(acetone). In the case of using SC-CO{sub 2} (7.5 Mpa, 40 .deg. C), we had as good results as those of the case using gas-CO{sub 2}. Besides the processing time was shortened compared with that of the case of using gas-CO{sub 2}.

  17. Reactive Ion Etching of GaAs, GaSb, InP and InAs in Cl2/Ar Plasma

    Institute of Scientific and Technical Information of China (English)

    HONG Ting; ZHANG Yong-gang; LIU Tian-dong

    2004-01-01

    Reactive ion etching characteristics of GaAs,GaSb, InP and InAs using Cl2/Ar plasma have been investigated, it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power. Etch rates of above 0.45 μm/rin and 1.2 μm/rin have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates (<40 nm/rin) were observed in etching of In-containing materials,which were linearly increased with the applied RF power. Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.

  18. Studying post-etching silicon crystal defects on 300mm wafer by automatic defect review AFM

    Science.gov (United States)

    Zandiatashbar, Ardavan; Taylor, Patrick A.; Kim, Byong; Yoo, Young-kook; Lee, Keibock; Jo, Ahjin; Lee, Ju Suk; Cho, Sang-Joon; Park, Sang-il

    2016-03-01

    Single crystal silicon wafers are the fundamental elements of semiconductor manufacturing industry. The wafers produced by Czochralski (CZ) process are very high quality single crystalline materials with known defects that are formed during the crystal growth or modified by further processing. While defects can be unfavorable for yield for some manufactured electrical devices, a group of defects like oxide precipitates can have both positive and negative impacts on the final device. The spatial distribution of these defects may be found by scattering techniques. However, due to limitations of scattering (i.e. light wavelength), many crystal defects are either poorly classified or not detected. Therefore a high throughput and accurate characterization of their shape and dimension is essential for reviewing the defects and proper classification. While scanning electron microscopy (SEM) can provide high resolution twodimensional images, atomic force microscopy (AFM) is essential for obtaining three-dimensional information of the defects of interest (DOI) as it is known to provide the highest vertical resolution among all techniques [1]. However AFM's low throughput, limited tip life, and laborious efforts for locating the DOI have been the limitations of this technique for defect review for 300 mm wafers. To address these limitations of AFM, automatic defect review AFM has been introduced recently [2], and is utilized in this work for studying DOI on 300 mm silicon wafer. In this work, we carefully etched a 300 mm silicon wafer with a gaseous acid in a reducing atmosphere at a temperature and for a sufficient duration to decorate and grow the crystal defects to a size capable of being detected as light scattering defects [3]. The etched defects form a shallow structure and their distribution and relative size are inspected by laser light scattering (LLS). However, several groups of defects couldn't be properly sized by the LLS due to the very shallow depth and low

  19. A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2

    Directory of Open Access Journals (Sweden)

    Seon-Geun Oh

    2014-01-01

    Full Text Available The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz, pressure, and gas flow ratio. For the SiNx:H film, the etch rates obtained using NF3/O2 were higher than those obtained using SF6/O2 under various process conditions. The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES intensity of atomic fluorine (685.1 nm and 702.89 nm and the voltages VH and VL—were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine (I(F and the square root of the voltages (Vh+Vl on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.

  20. Fabrication of GaAs Nanowires by Colloidal Lithography and Dry Etching

    Institute of Scientific and Technical Information of China (English)

    CHEN Ke; HE Jian-Jun; LI Ming-Yu; LaPierre R

    2012-01-01

    A method for the fabrication of well-ordered periodic GaAs nanowires (NWs) is developed based on a combination of colloidal lithography and an inductively coupled plasma (ICP) etching technique using CHF3/Ar and Cl2/N2/BCl3 chemistry.The effects of etching parameters such as flow rate,and etching duration on NW fabrication are investigated.The reflectance spectra of the GaAs NW samples are measured and compared with NWs fabricated by molecular beam epitaxy.

  1. High etching rates of bulk Nb in Ar/Cl2 microwave discharge

    Energy Technology Data Exchange (ETDEWEB)

    Raskovic, Marija; Upadhyay, Janardan; Phillips, H.; Valente, Anne-Marie

    2008-05-01

    Niobium is the material of choice for production of superconducting radio frequency cavities used in linear particle accelerators. In this study, plasma etching of bulk Nb is performed on the surface of disk shaped samples with the goal of eliminating non-superconductive pollutants in the penetration depth region and mechanically damaged surface layer. We have demonstrated that, in the microwave glow discharge, the etchings rates of 1.5 ?m/min can be achieved using Cl2 as reactive gas. The influence of plasma parameters such as input power, pressure, and concentration of the reactive gas on the etching rates is determined.

  2. Self-assembled peptide nanotubes as an etching material for the rapid fabrication of silicon wires

    DEFF Research Database (Denmark)

    Larsen, Martin Benjamin Barbour Spanget; Andersen, Karsten Brandt; Svendsen, Winnie Edith;

    2011-01-01

    This study has evaluated self-assembled peptide nanotubes (PNTS) and nanowires (PNWS) as etching mask materials for the rapid and low-cost fabrication of silicon wires using reactive ion etching (RIE). The self-assembled peptide structures were fabricated under mild conditions and positioned...... for around 32 seconds while the PNWS resisted only 4 seconds before becoming milled. Based on these results, self-assembled PNTS were further used as an etching mask to fabricate silicon wires in a rapid and low-cost manner. The obtained silicon wires were subjected to structural and electrical...

  3. WSi2/Si Multilayer Sectioning by Reactive Ion Etching for Multilayer Laue Lens Fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Bouet, N.; Conley, R.; Biancarosaa, J.; Divanc, R.; Macrander, A. T.

    2010-08-01

    SPIE Conference paper/talk presentation: Introduction: Reactive ion etching (RIE) has been employed in a wide range of fields such as semiconductor fabrication, MEMS (microelectromechanical systems), and refractive x-ray optics with a large investment put towards the development of deep RIE. Due to the intrinsic differing chemistries related to reactivity, ion bombardment, and passivation of materials, the development of recipes for new materials or material systems can require intense effort and resources. For silicon in particular, methods have been developed to provide reliable anisotropic profiles with good dimensional control and high aspect ratios1,2,3, high etch rates, and excellent material to mask etch selectivity...

  4. Etching of GaAs substrates to create As-rich surface

    Indian Academy of Sciences (India)

    A Chanda; S Verma; C Jacob

    2007-12-01

    Several different cleaning procedures for GaAs (100) substrates are compared using X-ray photoelectron spectroscopy and optical microscopy. This work emphasizes the effect of the last etching step: using either HCl, HF–ethanol (5%) or static deionized water after HCl cleaning. All the procedures except HCl solution (1 : 1) produce an As-rich surface. Also, none of the etchants except HF–ethanol solution produce Ga or As-rich (oxide free) surfaces. Optical microscopic study shows different etch pits produced due to etching in different solutions.

  5. The etching property of the surface of CR-39 and the track core radius of fission fragment

    CERN Document Server

    Mineyama, D; Yamauchi, T; Oda, K; El-Rahman, A

    2002-01-01

    The etch pits of fission fragments in CR-39 detector have been observed carefully using an atomic force microscope (AFM) after extremely short chemical etching in stirred 6N KOH solution kept at 70degC. It was found that there existed a thin layer where the bulk etch rate is relativity from large the etch-pit growth curve for the etching duration between 10 and 1800 seconds. The track core radius of fission fragment was evaluated to be about 6 nm from the extrapolation of the growth curve in a thinner region. (author)

  6. The best etching condition of 12-μm thick polyester film as a solid track detector

    International Nuclear Information System (INIS)

    Solid track spark counting is a convenient way to investigate the best etching condition of polyester-films. In this work, polyester films in thickness of 12 were etched in KOH solution in three groups of etching conditions, in term of the temperature, KOH concentration and etching hours. By comparing the spark counting curves, it was decided that the 12-μm thick polyester films could be etched best in a 6 mol/L KOH solution at 60 degree C for 3 h. (authors)

  7. Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3

    International Nuclear Information System (INIS)

    The etch rate of LiTaO3 in CF4/CHF3 plasmas was increased by ∼50% by prior implantation with MeV O2+ ions. The etch rate of LiTaO3 was shown to increase with ion dose, indicating an effect of the implant-induced nuclear damage on the etch process. In general terms, the reactive ion etching of LiTaO3 in CF4/CHF3 plasmas has been identified as a process of ion-enhanced chemical etching

  8. Asymmetrically modulating the insulator-metal transition of thermochromic VO2 films upon heating and cooling by mild surface-etching

    Science.gov (United States)

    Kang, Litao; Xie, Lingli; Chen, Zhang; Gao, Yanfeng; Liu, Xuguang; Yang, Yongzhen; Liang, Wei

    2014-08-01

    The reversible thermochromic insulator-metal transition (IMT) of VO2 is believed to start from suitable nucleating defects, but the role of specific defects during the IMT has remained elusive. In this work, we performed a simple, mild but effective acid etching treatment on pure-phase VO2 films to adjust the surface state of the VO2 particles while leaving the phase composition, crystallinity, grain size, and stoichiometry unchanged. By continuously etching VO2 particles, the poor crystallized layers on the particle surface were removed, and the particle connections became loose, resulting in significant shifts of the IMT toward higher temperatures. In stark contrast, the reversal IMT (i.e., metal-insulator transition, MIT) parameters remained relatively steady during the etching process. These experimental results correlate directly the IMT characteristics with the states (e.g., local defects, stress, and connection) of the particle surface, and further enable us to asymmetrically modulate the IMT parameters, while keeping the MIT (i.e., metal-insulator transition, the reversal of IMT) almost constant. This work illustrates the potential for particle surface engineering in thermochromic VO2 films.

  9. COMPOSITE RESIN BOND STRENGTH TO ETCHED DENTINWITH ONE SELF PRIMING ADHESIVE

    Directory of Open Access Journals (Sweden)

    P SAMIMI

    2002-09-01

    Full Text Available Introduction. The purpose of this study was to compare shear bond strength of composite resins to etched dentin in both dry and wet dentin surface with active and inactive application of a single-bottle adhesive resin (Single Bond, 3M Dental products. Methods. Fourthy four intact human extracted molars and premolars teeth were selected. The facial surfaces of the teeth were grounded with diamond bur to expose dentin. Then specimens were divided into four groups of 11 numbers (9 Molars and 2 Premolars. All the samples were etched with Phosphoric Acid Gel 35% and then rinsed for 10 seconds. The following stages were carried out for each group: Group I (Active-Dry: After rinsing, air drying of dentin surface for 15 seconds, active priming of adhesive resin for 15 seconds, air drying for 5 seconds, the adhesive resin layer was light cured for 10 seconds. Group III (Inactive-Dry:After rinsing, air drying of dentin surface for 15 seconds, adhesive resin was applied and air dryied for 5 seconds, the adhesive layer was light cured for 10 seconds. Group III (Active-Wet:After rinsing, removal of excess water of dentin surface with a cotton roll, active priming of adhesive resin for 15 seconds and air drying for 5 seconds, the adhesive layer was light cured for 10 seconds. Group IV (Inactive-Wet:After rinsing, removal of excess water of dentin surface with a cotton roll, the adhesive resin was applied and air dryied for 5 seconds and then cured for 10 seconds. After adhesive resin application, composite resin (Z250, 3M Dental products was applied on prepared surface with cylindrical molds (with internal diameter of 2.8mm, & height of 5mm and light-cured for 100 seconds (5x20s. The samples were then thermocycled. They were located in 6±3c water .temperature for 10 seconds and then 15 seconds in inviromental temperature, 10s in 55±3c water temperature and then were located at room temperature for 15s. This test was repeated for 100s. All of the specimens

  10. 利用湿法刻蚀的方式制备黑硅%Preparation of Black Silicon by Means of Wet Etching

    Institute of Scientific and Technical Information of China (English)

    张安元; 吴志明; 赵国栋; 姜晶; 郭振宇

    2011-01-01

    采用一种简便的方法制备出具有很好光吸收性能的黑硅材料,利用化学气象沉积和光刻的方式在硅片(100)表面形成圆形Si3 N4掩膜,然后采用两种湿法刻蚀相结合方式来制备黑硅材料.首先采用碱刻蚀的方式对硅片进行各向异性刻蚀,刻蚀完成后在硅片表面形成尖锥形貌;后期利用金纳米颗粒作为催化剂,采用酸刻蚀的方式对硅片表面进行改性,在硅片表面形成多孔结构.这种黑硅材料在250~1 000 nm波段的光吸收率可以达到95%以上.%A simple method of preparing black silicon (BS) with high optical absorptivity is introduced. During the prepa-ration, the chemical vapor deposition and photolithography are employed to form a nitride mask on the surface of silicon (100), and then two kinds of wet etching are used to prepare the black silicon material. The first step is that the anisotropic etching on a silicon wafer is performed with the method of alkali etching to form the tip morphology on the silicon surface. Af-ter that, some gold nanoparticles are taken as the catalyst to modify the surface of the silicon by the method of acid etching for forming a porous structure on the silicon surface. The optical absorptivity of the black silicon can reach 95 % at the wavelength of 250-1000 nm.

  11. Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography

    International Nuclear Information System (INIS)

    Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics with a completely different configuration than those of conventional photolithography. This study investigated the etching properties of indium tin oxide (ITO) binary mask materials for EUVL, such as ITO (absorber layer), Ru (capping/etch-stop layer), and a Mo-Si multilayer (reflective layer), by varying the Cl2/Ar gas flow ratio, dc self-bias voltage (Vdc), and etch time in inductively coupled plasmas. The ITO absorber layer needs to be etched with no loss in the Ru layer on the Mo-Si multilayer for fabrication of the EUVL ITO binary mask structure proposed here. The ITO layer could be etched with an infinitely high etch selectivity over the Ru etch-stop layer in Cl2/Ar plasma even with a very high overetch time.

  12. Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung Moo [Department of Materials Science and Engineering, Korea University, Anam-Dong, Sungbook-Ku, Seoul, 136-701 (Korea, Republic of); TC Technology Team, Samsung Electronics Co. Ltd., Nongseo-Dong, Kiheung-Ku, Yongin-Si, Gyeounggi-Do, 446-711 (Korea, Republic of); Won, Jaihyung [TC Technology Team, Samsung Electronics Co. Ltd., Nongseo-Dong, Kiheung-Ku, Yongin-Si, Gyeounggi-Do, 446-711 (Korea, Republic of); Yim, Soyoung [Department of Materials Science and Engineering, Korea University, Anam-Dong, Sungbook-Ku, Seoul, 136-701 (Korea, Republic of); Park, Se Jun; Choi, Jongsik; Kim, Jeongtae; Lee, Hyeondeok [TC Technology Team, Samsung Electronics Co. Ltd., Nongseo-Dong, Kiheung-Ku, Yongin-Si, Gyeounggi-Do, 446-711 (Korea, Republic of); Byun, Dongjin, E-mail: dbyun@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Anam-Dong, Sungbook-Ku, Seoul, 136-701 (Korea, Republic of)

    2012-06-01

    The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch rate hard mask. The hydrocarbon contents and hydrogen concentration were decreased with increasing deposition and annealing temperatures. The I(D)/I(G) intensity ratio and extinction coefficient of the a-C:H films were increased with increasing deposition and annealing temperatures because of the increase of sp{sup 2} bonds in the a-C:H films. There was no relationship between the density of the unpaired electrons and the deposition temperature, or between the density of the unpaired electrons and the annealing temperature. However, the thermally annealed a-C:H films had fewer unpaired electrons compared with the as-deposited ones. Transmission electron microscopy analysis showed the absence of any crystallographic change after thermal annealing. The density of the as-deposited films was increased with increasing deposition temperature. The density of the 600 Degree-Sign C annealed a-C:H films deposited under 450 Degree-Sign C was decreased but at 550 Degree-Sign C was increased, and the density of all 800 Degree-Sign C annealed films was increased. The dry etch rate of the as-deposited a-C:H films was negatively correlated with the deposition temperature. The dry etch rate of the 600 Degree-Sign C annealed a-C:H films deposited at 350 Degree-Sign C and 450 Degree-Sign C was faster than that of the as-deposited film and that of the 800 Degree-Sign C annealed a-C:H films deposited at 350 Degree-Sign C and 450 Degree-Sign C was 17% faster than that of the as-deposited film. However, the dry etch rate of the 550 Degree-Sign C deposited a-C:H film was decreased after annealing at 600 Degree-Sign C and 800 Degree-Sign C. The dry etch rate of the as-deposited films was decreased with increasing density but that of the annealed

  13. Spent nuclear fuel recycling with plasma reduction and etching

    Science.gov (United States)

    Kim, Yong Ho

    2012-06-05

    A method of extracting uranium from spent nuclear fuel (SNF) particles is disclosed. Spent nuclear fuel (SNF) (containing oxides of uranium, oxides of fission products (FP) and oxides of transuranic (TRU) elements (including plutonium)) are subjected to a hydrogen plasma and a fluorine plasma. The hydrogen plasma reduces the uranium and plutonium oxides from their oxide state. The fluorine plasma etches the SNF metals to form UF6 and PuF4. During subjection of the SNF particles to the fluorine plasma, the temperature is maintained in the range of 1200-2000 deg K to: a) allow any PuF6 (gas) that is formed to decompose back to PuF4 (solid), and b) to maintain stability of the UF6. Uranium (in the form of gaseous UF6) is easily extracted and separated from the plutonium (in the form of solid PuF4). The use of plasmas instead of high temperature reactors or flames mitigates the high temperature corrosive atmosphere and the production of PuF6 (as a final product). Use of plasmas provide faster reaction rates, greater control over the individual electron and ion temperatures, and allow the use of CF4 or NF3 as the fluorine sources instead of F2 or HF.

  14. Apodized grating coupler using fully-etched nanostructures

    Science.gov (United States)

    Wu, Hua; Li, Chong; Li, Zhi-Yong; Guo, Xia

    2016-08-01

    A two-dimensional apodized grating coupler for interfacing between single-mode fiber and photonic circuit is demonstrated in order to bridge the mode gap between the grating coupler and optical fiber. The grating grooves of the grating couplers are realized by columns of fully etched nanostructures, which are utilized to digitally tailor the effective refractive index of each groove in order to obtain the Gaussian-like output diffractive mode and then enhance the coupling efficiency. Compared with that of the uniform grating coupler, the coupling efficiency of the apodized grating coupler is increased by 4.3% and 5.7%, respectively, for the nanoholes and nanorectangles as refractive index tunes layer. Project supported by the National Natural Science Foundation of China (Grant Nos. 61222501, 61335004, and 61505003), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20111103110019), the Postdoctoral Science Foundation of Beijing Funded Project, China (Grant No. Q6002012201502), and the Science and Technology Research Project of Jiangxi Provincial Education Department, China (Grant No. GJJ150998).

  15. Apodized grating coupler using fully-etched nanostructures

    Science.gov (United States)

    Wu, Hua; Li, Chong; Li, Zhi-Yong; Guo, Xia

    2016-08-01

    A two-dimensional apodized grating coupler for interfacing between single-mode fiber and photonic circuit is demonstrated in order to bridge the mode gap between the grating coupler and optical fiber. The grating grooves of the grating couplers are realized by columns of fully etched nanostructures, which are utilized to digitally tailor the effective refractive index of each groove in order to obtain the Gaussian-like output diffractive mode and then enhance the coupling efficiency. Compared with that of the uniform grating coupler, the coupling efficiency of the apodized grating coupler is increased by 4.3% and 5.7%, respectively, for the nanoholes and nanorectangles as refractive index tunes layer. Project supported by the National Natural Science Foundation of China (Grant Nos. 61222501, 61335004, and 61505003), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20111103110019), the Postdoctoral Science Foundation of Beijing Funded Project, China (Grant No. Q6002012201502), and the Science and Technology Research Project of Jiangxi Provincial Education Department, China (Grant No. GJJ150998).

  16. Marginal microleakage of resin-modified glass-ionomer and composite resin restorations: Effect of using etch-and-rinse and self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Maryam Khoroushi

    2012-01-01

    Full Text Available Objectives: Previous studies have shown that dental adhesives increase the bond strength of resin-modified glass-ionomer (RMGI restorative materials to dentin. This in vitro study has evaluated the effect of etch-and-rinse and self-etch bonding systems v/s cavity conditioner, and in comparison to similar composite resin restorations on maintaining the marginal sealing of RMGI restorations. Materials and Methods: 98 rectangular cavities (2.5×3×1.5 mm were prepared on buccal and palatal aspects of 49 human maxillary premolars, randomly divided into 7 groups (N=14. The cavities in groups 1, 2 and 3 were restored using a composite resin (APX. The cavities in groups 4, 5, 6 and 7 were restored using a resin-modified glass-ionomer (Fuji II LC. Before restoring, adhesive systems (Optibond FL = OFL, three-step etch-and-rinse; One Step Plus = OSP, two-step etch-and-rinse; Clearfil Protect Bond = CPB, two-step self-etch were used as bonding agents in groups 1-6 as follow: OFL in groups 1 and 4, OSP in groups 2 and 5, and CPB in groups 3 and 6, respectively. The specimens in group 7 were restored with GC cavity conditioner and Fuji II LC. All the specimens were thermo-cycled for 1000 cycles. Microleakage scores were determined using dye penetration method. Statistical analyzes were carried out with Kruskal-Wallis and Mann-Whitney U tests (α=0.05. Results: There were significant differences in microleakage scores at both enamel and dentinal margins between the study groups (P<0.05. The lowest microleakage scores at enamel and dentin margins of RMGI restorations were observed in group 6. Conclusion: Use of two-step self-etch adhesive, prior to restoring cervical cavities with RMGIC, seems to be more efficacious than the conventional cavity conditioner in decreasing marginal microleakage.

  17. Impact of electron irradiation on particle track etching response in polyallyl diglycol carbonate (PADC)

    Indian Academy of Sciences (India)

    R Mishra; S P Tripathy; A Kulshrestha; A Srivastava; S Ghosh; K K Dwivedi; D T Khathing; M Müller; D Fink

    2000-05-01

    In the present work, attempts have been made to investigate the modification in particle track etching response of polyallyl diglycol carbonate (PADC) due to impact of 2 MeV electrons. PADC samples pre-irradiated to 1, 10, 20, 40, 60, 80 and 100 Mrad doses of 2 MeV electrons were further exposed to 140 MeV 28Si beam and dose-dependent track registration properties of PADC have been studied. Etch-rate values of the PADC irradiated to 100 Mrad dose electron was found to increase by nearly 4 times that of pristine PADC. The electron irradiation has promoted chain scissioning in PADC, thereby converting the polymer into an easily etchable polymer. Moreover, the etching response and the detection efficiency were found to improve by electron irradiation. Scanning electron microscopy of etched samples further revealed the surface damage in these irradiated PADCs

  18. A process study of electron beam nano-lithography and deep etching with an ICP system

    Institute of Scientific and Technical Information of China (English)

    LI QunQing; ZHANG LiHui; CHEN Mo; FAN ShouShan

    2009-01-01

    A systemic process study on an electron beam nanolithography system operating at 100 kV was pre-sent. The exposure conditions were optimized for resist ZEP520A. Grating structures with line/space of 50 nm/50 nm were obtained in a reasonably thick resist which is beneficial to the subsequent pattern transfer technique. The ICP etching process conditions was optimized. The role of etching parameters such as source power, gas pressure, and gas flow rate on the etching result was also discussed. A grating structure with line widths as small as 100 nm, duty cycles of 0.5, depth of 900 nm, and the side-wall scalloping as small as 5 nm on a silicon substrate was obtained. The silicon deep etching technique for structure sizes smaller than 100 nm is very important for the fabrication of nano-optical devices working in the visible regime.

  19. Fundamental Technical Elements of Freeze-fracture/Freeze-etch in Biological Electron Microscopy

    Science.gov (United States)

    Freeze-fracture/freeze-etch describes a process whereby specimens, typically biological or nanomaterial in nature, are frozen, fractured, and replicated to generate a carbon/platinum "cast" intended for examination by transmission electron microscopy. Specimens are subjected to u...

  20. Fine-tuning the etch depth profile via dynamic shielding of ion beam

    Science.gov (United States)

    Wu, Lixiang; Qiu, Keqiang; Fu, Shaojun

    2016-08-01

    We introduce a method for finely adjusting the etch depth profile by dynamic shielding in the course of ion beam etching (IBE), which is crucial for the ultra-precision fabrication of large optics. We study the physical process of dynamic shielding and propose a parametric modeling method to quantitatively analyze the shielding effect on etch depths, or rather the shielding rate, where a piecewise Gaussian model is adopted to fit the shielding rate profile. Two experiments were conducted. The experimental result of parametric modeling of shielding rate profiles shows that the shielding rate profile is significantly influenced by the rotary angle of the leaf. The result of the experiment on fine-tuning the etch depth profile shows good agreement with the simulated result, which preliminarily verifies the feasibility of our method.