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Sample records for ab switched current

  1. Ultra-Low Voltage Class AB Switched Current Memory Cell

    DEFF Research Database (Denmark)

    Igor, Mucha

    1996-01-01

    This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

  2. Ultra Low Voltage Class AB Switched Current Memory Cells Based on Floating Gate Transistors

    DEFF Research Database (Denmark)

    Mucha, Igor

    1999-01-01

    current memory cells were designed using a CMOS process with threshold voltages V-T0n = \\V-T0p\\ = 0.9 V for the n- and p-channel devices. Both hand calculations and PSPICE simulations showed that the designed example switched current memory cell allowed a maximum signal range better than +/-18 mu......A proposal for a class AB switched current memory cell, suitable for ultra-low-voltage applications is presented. The proposal employs transistors with floating gates, allowing to build analog building blocks for ultralow supply voltage operation also in CMOS processes with high threshold voltages....... This paper presents the theoretical basis for the design of "floating-gate'' switched current memory cells by giving a detailed description and analysis of the most important impacts degrading the performance of the cells. To support the theoretical assumptions circuits based on "floating-gate'' switched...

  3. Ab initio theory for current-induced molecular switching: Melamine on Cu(001)

    KAUST Repository

    Ohto, Tatsuhiko

    2013-05-28

    Melamine on Cu(001) is mechanically unstable under the current of a scanning tunneling microscope tip and can switch among configurations. However, these are not equally accessible, and the switching critical current depends on the bias polarity. In order to explain such rich phenomenology, we have developed a scheme to evaluate the evolution of the reaction paths and activation barriers as a function of bias, which is rooted in the nonequilibrium Green\\'s function method implemented within density functional theory. This, combined with the calculation of the inelastic electron tunneling spectroscopy signal, allows us to identify the vibrational modes promoting the observed molecular conformational changes. Finally, once our ab initio results are used within a resonance model, we are able to explain the details of the switching behavior, such as its dependence on the bias polarity, and the noninteger power relation between the reaction rate constants and both the bias voltage and the electric current. © 2013 American Physical Society.

  4. Ab initio theory for current-induced molecular switching: Melamine on Cu(001)

    KAUST Repository

    Ohto, Tatsuhiko; Rungger, Ivan; Yamashita, Koichi; Nakamura, Hisao; Sanvito, Stefano

    2013-01-01

    Melamine on Cu(001) is mechanically unstable under the current of a scanning tunneling microscope tip and can switch among configurations. However, these are not equally accessible, and the switching critical current depends on the bias polarity. In order to explain such rich phenomenology, we have developed a scheme to evaluate the evolution of the reaction paths and activation barriers as a function of bias, which is rooted in the nonequilibrium Green's function method implemented within density functional theory. This, combined with the calculation of the inelastic electron tunneling spectroscopy signal, allows us to identify the vibrational modes promoting the observed molecular conformational changes. Finally, once our ab initio results are used within a resonance model, we are able to explain the details of the switching behavior, such as its dependence on the bias polarity, and the noninteger power relation between the reaction rate constants and both the bias voltage and the electric current. © 2013 American Physical Society.

  5. Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

    Science.gov (United States)

    Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

    2017-12-01

    There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

  6. High-voltage high-current triggering vacuum switch

    International Nuclear Information System (INIS)

    Alferov, D.F.; Bunin, R.A.; Evsin, D.V.; Sidorov, V.A.

    2012-01-01

    Experimental investigations of switching and breaking capacities of the new high current triggered vacuum switch (TVS) are carried out at various parameters of discharge current. It has been shown that the high current triggered vacuum switch TVS can switch repeatedly a current from units up to ten kiloampers with duration up to ten millisecond [ru

  7. A new Zero-Current-Transition PWM switching cell

    Energy Technology Data Exchange (ETDEWEB)

    Grigore, V. [Electronics and Telecommunications Faculty, `Politechnica` University Bucharest (Romania); Kyyrae, J. [Helsinki University of Technology, Otaniemi (Finland): Institute of Intelligent Power Electronics

    1997-12-31

    In this paper a new Zero-Current-Transition (ZCT) PWM switching cell is presented. The proposed switching cell is composed of the normal hard-switched PWM cell (consisting of one active switch and one passive switch), plus as auxiliary circuit. The auxiliary circuit is inactive during the ON ad OFF intervals of the switches in the normal PWM switch. The transitions between the two states are controlled by the auxiliary circuit. Prior to turn-off, the current through the active switch in the PWM cell is forced to zero, thus the turn-off losses of the active switch are practically eliminated. At turn-on the auxiliary circuit slows down the growing rate of the current through the main switch. Thus, turn-on losses are also very much reduced. The active switch operates under ZCT conditions, the passive switch (diode) has a controlled reverse recovery, while the switch in the auxiliary circuit operates under Zero-Current-Switching (ZCS) conditions. (orig.) 3 refs.

  8. Ab initio investigation of the switching behavior of the dithiole-benzene nano-molecular wire

    International Nuclear Information System (INIS)

    Darvish Ganji, M.; Rungger, I.

    2008-01-01

    We report a first-principle study of electrical transport and switching behavior in a single molecular conductor consisting of a dithiole-benzene sandwiched between two Au( 100) electrodes. Ab initio total energy calculations reveal dithiole-benzene molecules on a gold surface, contacted by a monoatomic gold scanning tunneling microscope tip to have two classes of low energy conformations with differing symmetries. Lateral motion of the tip or excitation of the molecule cause it 10 change from one conformation class to the other and to switch between a strongly and a weakly conducting state. Thus, surprisingly. despite their apparent simplicity, these Au-dithiole-benzene -Au nano wires are shown to be electrically bi-stable switches, the smallest two-terminal molecular switches to date. The projected density of states and transmission coefficients are analyzed, and it suggests that the variation of the coupling between the molecule and the electrodes with external bias leads to switching behavior

  9. Ultra-low-power, class-AB, CMOS four-quadrant current multiplier

    NARCIS (Netherlands)

    Sawigun, C.; Serdijn, W.A.

    2009-01-01

    A class-AB four-quadrant current multiplier constituted by a class-AB current amplifier and a current splitter which can handle input signals in excess of ten times the bias current is presented. The proposed circuit operation is based on the exponential characteristic of BJTs or subthreshold

  10. High-voltage, high-current, solid-state closing switch

    Science.gov (United States)

    Focia, Ronald Jeffrey

    2017-08-22

    A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

  11. Current distribution in a plasma erosion opening switch

    International Nuclear Information System (INIS)

    Weber, B.V.; Commisso, R.J.; Meger, R.A.; Neri, J.M.; Oliphant, W.F.; Ottinger, P.F.

    1984-01-01

    The current distribution in a plasma erosion opening switch is determined from magnetic field probe data. During the closed state of the switch the current channel broadens rapidly. The width of the current channel is consistent with a bipolar current density limit imposed by the ion flux to the cathode. The effective resistivity of the current channel is anomalously large. Current is diverted to the load when a gap opens near the cathode side of the switch. The observed gap opening can be explained by erosion of the plasma. Magnetic pressure is insufficient to open the gap

  12. Current distribution in a plasma erosion opening switch

    International Nuclear Information System (INIS)

    Weber, B.V.; Commisso, R.J.; Meger, R.A.; Neri, J.M.; Oliphant, W.F.; Ottinger, P.F.

    1985-01-01

    The current distribution in a plasma erosion opening switch is determined from magnetic field probe data. During the closed state of the switch the current channel broadens rapidly. The width of the current channel is consistent with a bipolar current density limit imposed by the ion flux to the cathode. The effective resistivity of the current channel is anomalously large. Current is diverted to the load when a gap opens near the cathode side of the switch. The observed gap opening can be explained by erosion of the plasma. Magnetic pressure is insufficient to open the gap

  13. High PRF high current switch

    Science.gov (United States)

    Moran, Stuart L.; Hutcherson, R. Kenneth

    1990-03-27

    A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

  14. Stabilization of a Nb3Sn persistent current switch

    International Nuclear Information System (INIS)

    Urata, M.; Maeda, H.; Nakayama, S.; Yoneda, E.; Oda, Y.; Kumano, T.; Aoki, N.; Tomisaki, T.; Kabashima, S.

    1993-01-01

    A 2000 A class Nb 3 Sn persistent current switch has been successfully fabricated in the Toshiba R and D Center. The Nb tube processed conductor with Cu-10 wt.% Ni matrix has been developed for the switch in the Showa Electric Wire and Cable Co. Ltd. The magnetic instability which was observed in the previous 35 Ω Nb 3 Sn persistent current switch was improved in the present switch. The problem of quench current degradation and flux jump on magnetization, emerged in the previous switch, were confirmed to be solved. In the fast ramp, however, the switch degrades from the calculated results assuming the self field ac loss. In the Nb 3 Sn reaction process, Sn in the bronze diffuses into the Nb tube, which decreases the switch resistance. It was observed by a computer aided micro analysis (CMA) that Ni in the CuNi matrix precipitated on the Nb tube, which slightly reduced the switch resistance. (orig.)

  15. Helical EMG module with explosive current opening switches

    International Nuclear Information System (INIS)

    Chernyshev, V.K.; Vakhrushev, V.V.; Volkov, G.I.; Ivanov, V.A.; Fetisov, I.K.

    1990-01-01

    To carry out the experimental work to study plasma properties, electromagnetic sources with 10 6 to 10 8 J of stored energy delivered to the load in microsecond time, are required. Among the current electromagnetic storage devices, the explosive magnetic generators (EMG) are of the largest energy capacity. The disadvantages of this type of generators is relatively long time (ten of microseconds) of electromagnetic energy cumulation in the deformable circuit. To reduce the time of energy transfer to the load to a microsecond range the switching scheme is generally used, where the cumulation circuit and that of the load are separated and connected in parallel via a switching element (opening switch) providing generation of desired power. In this paper, some ways and means of designing opening switches to generate high current pulses have been investigated. The opening switches to generate high current pulses have been investigated. The opening switches which operation is based on mechanic destruction of the conductor using high explosive, have the highest and most reliable performance. The authors have explored the mechanic disruption of a thin conductor (foil), the technique based on throwing the foil at the ribbed barrier of electric insulator material. The report presents the data obtained in studying the operation of this type of opening switch having cylindrical shape, 200 mm in diameter and 200 mm long, designed for generation of 5.5 MA current pulse in the load

  16. Low Voltage Current Mode Switched-Current-Mirror Mixer

    Directory of Open Access Journals (Sweden)

    Chunhua Wang

    2009-09-01

    Full Text Available A new CMOS active mixer topology can operate at 1 V supply voltage by use of SCM (switched currentmirror. Such current-mode mixer requires less voltage headroom with good linearization. Mixing is achieved with four improved current mirrors, which are alternatively activated. For ideal switching, the operation is equivalent to a conventional active mixer. This paper analyzes the performance of the SCM mixer, in comparison with the conventional mixer, demonstrating competitive performance at a lower supply voltage. Moreover, the new mixer’s die, without any passive components, is very small, and the conversion gain is easy to adjust. An experimental prototype was designed and simulated in standard chartered 0.18μm RF CMOS Process with Spectre in Cadence Design Systems. Experimental results show satisfactory mixer performance at 2.4 GHz.

  17. Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching

    Directory of Open Access Journals (Sweden)

    H. B. Huang

    2016-01-01

    Full Text Available We investigated the effect of substrate misfit strain on the current-induced magnetization switching in magnetic tunnel junctions by combining micromagnetic simulation with phase-field microelasticity theory. Our results indicate that the positive substrate misfit strain can decrease the critical current density of magnetization switching by pushing the magnetization from out-of-plane to in-plane directions, while the negative strain pushes the magnetization back to the out-of-plane directions. The magnetic domain evolution is obtained to demonstrate the strain-assisted current-induced magnetization switching.

  18. High current vacuum closing switch

    International Nuclear Information System (INIS)

    Dolgachev, G.I.; Maslennikov, D.D.; Romanov, A.S.; Ushakov, A.G.

    2005-01-01

    The paper proposes a powerful pulsed closing vacuum switch for high current commutation consisting of series of the vacuum diodes with near 1 mm gaps having closing time determined by the gaps shortening with the near-electrode plasmas [ru

  19. Studies of current-perpendicular-to-plane magnetoresistance (CPP-MR) and current-induced magnetization switching (CIMS)

    Science.gov (United States)

    Kurt, Huseyin

    2005-08-01

    We present two CPP-MR studies of spin-valves based upon ferromagnetic/nonmagnetic/ferromagnetic (F/N/F) trilayers. We measure the spin-diffusion lengths of N = Pd, Pt, and Au at 4.2K, and both the specific resistances (sample area A times resistance R) and spin-memory-loss of N/Cu interfaces. Pd, Pt and Au are of special device interest because they give perpendicular anisotropy when sandwiching very thin Co layers. Comparing our spin-memory-loss data at Pd/Cu and Pt/Cu interfaces with older data for Nb/Cu and W/Cu gives insight into the importance of spin-orbit coupling in producing such loss. We reproduce and extend prior studies by Eid of 'magnetic activity' at the interface of Co and N-metals (or combinations of N-metals), when the other side of the N-metal contacts a superconductor (S). Our data suggest that magnetic activity may require strong spin-flipping at the N/S interface. We present five studies of a new phenomenon, CIMS, in F1/N/F2 trilayers, with F1 a thick 'polarizing' layer and F2 a thin 'switching' layer. In all prior studies of CIMS, positive current caused the magnetization of F2 to switch from parallel (P) to anti-parallel (AP) to that of F1- 'normal' switching. By judicious addition of impurities to F-metals, we are able to controllably produce both 'normal' and 'inverse' switching- where positive current switches the magnetization of F2 from AP to P to that of F1. In the samples studied, whether the switching is normal or inverse is set by the 'net polarization' produced by F1 and is independent of the properties of F2. As scattering in the bulk of F1 and F2 is essential to producing our results, these results cannot be described by ballistic models, which allow scattering only at interfaces. Most CIMS experiments use Cu as the N-layer due to its low resistivity and long spin-diffusion length. We show that Ag and Au have low enough resistivities and long enough spin-diffusion lengths to be useful alternatives to Cu for some devices. While

  20. Current measurement method for characterization of fast switching power semiconductors with Silicon Steel Current Transformer

    DEFF Research Database (Denmark)

    Li, Helong; Beczkowski, Szymon; Munk-Nielsen, Stig

    2015-01-01

    This paper proposes a novel current measurement method with Silicon Steel Current Transformer (SSCT) for the characterization of fast switching power semiconductors. First, the existing current sensors for characterization of fast switching power semiconductors are experimentally evaluated...

  1. Current-driven thermo-magnetic switching in magnetic tunnel junctions

    Science.gov (United States)

    Kravets, A. F.; Polishchuk, D. M.; Pashchenko, V. A.; Tovstolytkin, A. I.; Korenivski, V.

    2017-12-01

    We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ electrodes, and is due to a current-driven ferro-to-paramagnetic Curie transition with the associated exchange decoupling within the free layer leading to magnetic reversal. We simulate the current and heat propagation through the device and show how heat focusing can be used to improve the power efficiency. The Curie-switch MTJ demonstrated in this work has the advantage of being highly tunable in terms of its operating temperature range, conveniently to or just above room temperature, which can be of technological significance and competitive with the known switching methods using spin-transfer torques.

  2. Switching a Perpendicular Ferromagnetic Layer by Competing Spin Currents

    Science.gov (United States)

    Ma, Qinli; Li, Yufan; Gopman, D. B.; Kabanov, Yu. P.; Shull, R. D.; Chien, C. L.

    2018-03-01

    An ultimate goal of spintronics is to control magnetism via electrical means. One promising way is to utilize a current-induced spin-orbit torque (SOT) originating from the strong spin-orbit coupling in heavy metals and their interfaces to switch a single perpendicularly magnetized ferromagnetic layer at room temperature. However, experimental realization of SOT switching to date requires an additional in-plane magnetic field, or other more complex measures, thus severely limiting its prospects. Here we present a novel structure consisting of two heavy metals that delivers competing spin currents of opposite spin indices. Instead of just canceling the pure spin current and the associated SOTs as one expects and corroborated by the widely accepted SOTs, such devices manifest the ability to switch the perpendicular CoFeB magnetization solely with an in-plane current without any magnetic field. Magnetic domain imaging reveals selective asymmetrical domain wall motion under a current. Our discovery not only paves the way for the application of SOT in nonvolatile technologies, but also poses questions on the underlying mechanism of the commonly believed SOT-induced switching phenomenon.

  3. Iaverage current mode (ACM) control for switching power converters

    OpenAIRE

    2014-01-01

    Providing a fast current sensor direct feedback path to a modulator for controlling switching of a switched power converter in addition to an integrating feedback path which monitors average current for control of a modulator provides fast dynamic response consistent with system stability and average current mode control. Feedback of output voltage for voltage regulation can be combined with current information in the integrating feedback path to limit bandwidth of the voltage feedback signal.

  4. Fast and efficient STT switching in MTJ using additional transient pulse current

    Science.gov (United States)

    Pathak, Sachin; Cha, Jongin; Jo, Kangwook; Yoon, Hongil; Hong, Jongill

    2017-06-01

    We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.

  5. Micromagnetic analysis of geometrically controlled current-driven magnetization switching

    Directory of Open Access Journals (Sweden)

    O. Alejos

    2017-05-01

    Full Text Available The magnetization dynamics induced by current pulses in a pair of two “S-shaped” ferromagnetic elements, each one consisting on two oppositely tilted tapered spikes at the ends of a straight section, is theoretically studied by means of micromagnetic simulations. Our results indicate that the magnetization reversal is triggered by thermal activation, which assists the current-induced domain nucleation and the propagation of domain walls. The detailed analysis of the magnetization dynamics reveals that the magnetization switching is only achieved when a single domain wall is nucleated in the correct corner of the element. In agreement with recent experimental studies, the switching is purely dictated by the shape, being independent of the current polarity. The statistical study points out that successful switching is only achieved within a narrow range of the current pulse amplitudes.

  6. A simple self-breaking 2 MV gas switch

    Energy Technology Data Exchange (ETDEWEB)

    Di Capua, M.S.; Freytag, E.K.; Dixon, W.R.; Hawley, R.A.

    1987-06-29

    We describe a simple self-breaking 2 MV gas master switch for the LLNL 2 MV general purpose relativistic electron beam (REB) accelerator. The switch cavity has been hollowed out in a 17.8 cm-thick acrylic slab. The switch gap is 3.55 cm. At 2 MV the maximum field at the cathode is 740 kV cm/sup -1/ and the maximum envelope field is 172 kV cm/sup -1/. The maximum measured switching voltage is 1.90 +- 0.1 MV (10 bar abs). The minimum switching voltage is 1.1 MV (4.3 bar abs). The operating characteristics break away from the 89 kV/(cm atm) dc breakdown strength of SF/sub 6/ at 5 bar abs. Careful electrical and mechanical design as well as strict quality control during assembly and operation have resulted in reliable and reproducible operation.

  7. Emerging memories: resistive switching mechanisms and current status

    International Nuclear Information System (INIS)

    Jeong, Doo Seok; Thomas, Reji; Katiyar, R S; Scott, J F; Kohlstedt, H; Petraru, A; Hwang, Cheol Seong

    2012-01-01

    The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO 2 , Cr 2 O 3 , FeO x and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO 3 , Pb(Zr x Ti 1−x )O 3 , BiFeO 3 and Pr x Ca 1−x MnO 3 ; (iii) large band gap high-k dielectrics, e.g. Al 2 O 3 and Gd 2 O 3 ; (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In 2 Se 3 and In 2 Te 3 . Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors. (review article)

  8. Emerging memories: resistive switching mechanisms and current status

    Science.gov (United States)

    Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S.; Scott, J. F.; Kohlstedt, H.; Petraru, A.; Hwang, Cheol Seong

    2012-07-01

    The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO2, Cr2O3, FeOx and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO3, Pb(Zrx Ti1-x)O3, BiFeO3 and PrxCa1-xMnO3 (iii) large band gap high-k dielectrics, e.g. Al2O3 and Gd2O3; (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In2Se3 and In2Te3. Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

  9. Specific features of the switch-on gate current and different switch-on modes in silicon carbide thyristors

    International Nuclear Information System (INIS)

    Yurkov, S N; Mnatsakanov, T T; Levinshtein, M E; Cheng, L; Palmour, J W

    2014-01-01

    The specific features of the temperature and bias dependences of the switch-on gate current in SiC thyristors are examined analytically for two possible switching mechanisms. The so-called γ-mechanism, which is highly typical of the conventional Si thyristors, is characterized by very weak temperature and bias dependences. By contrast, the so-called α-mechanism, which is very characteristic of SiC thyristors, is highly sensitive to changes in temperature and bias. If the thyristor is switched on by the α-mechanism, the switch-on gate current density decreases very steeply with increasing temperature. As a result, the thyristor can lose its working capacity at elevated temperatures due to the instability against even very weak impacts. With decreasing the bias voltage U a , the gate switch-on current increases very steeply, which can make switching the thyristor on difficult. The unintentional shunting, which is apparently present in high-voltage SiC thyristors, causes the transition from the α- to the γ-mechanism at elevated temperatures and high biases. It can be supposed that introduction of a controllable technological shunting of the emitter–thin base junction allows stabilization of the temperature and bias parameters of SiC thyristors. The analytical results are confirmed by computer simulations performed in wide temperature and bias ranges for a 4H-SiC thyristor of the 18 kV class. (paper)

  10. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

    Science.gov (United States)

    Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

    2011-04-01

    A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

  11. CMOS switched current phase-locked loop

    NARCIS (Netherlands)

    Leenaerts, D.M.W.; Persoon, G.G.; Putter, B.M.

    1997-01-01

    The authors present an integrated circuit realisation of a switched current phase-locked loop (PLL) in standard 2.4 µm CMOS technology. The centre frequency is tunable to 1 MHz at a clock frequency of 5.46 MHz. The PLL has a measured maximum phase error of 21 degrees. The chip consumes

  12. Zener diode controls switching of large direct currents

    Science.gov (United States)

    1965-01-01

    High-current zener diode is connected in series with the positive input terminal of a dc supply to block the flow of direct current until a high-frequency control signal is applied across the zener diode. This circuit controls the switching of large dc signals.

  13. AB toxins: a paradigm switch from deadly to desirable.

    Science.gov (United States)

    Odumosu, Oludare; Nicholas, Dequina; Yano, Hiroshi; Langridge, William

    2010-07-01

    To ensure their survival, a number of bacterial and plant species have evolved a common strategy to capture energy from other biological systems. Being imperfect pathogens, organisms synthesizing multi-subunit AB toxins are responsible for the mortality of millions of people and animals annually. Vaccination against these organisms and their toxins has proved rather ineffective in providing long-term protection from disease. In response to the debilitating effects of AB toxins on epithelial cells of the digestive mucosa, mechanisms underlying toxin immunomodulation of immune responses have become the focus of increasing experimentation. The results of these studies reveal that AB toxins may have a beneficial application as adjuvants for the enhancement of immune protection against infection and autoimmunity. Here, we examine similarities and differences in the structure and function of bacterial and plant AB toxins that underlie their toxicity and their exceptional properties as immunomodulators for stimulating immune responses against infectious disease and for immune suppression of organ-specific autoimmunity.

  14. AB Toxins: A Paradigm Switch from Deadly to Desirable

    Directory of Open Access Journals (Sweden)

    Oludare Odumosu

    2010-06-01

    Full Text Available To ensure their survival, a number of bacterial and plant species have evolved a common strategy to capture energy from other biological systems. Being imperfect pathogens, organisms synthesizing multi-subunit AB toxins are responsible for the mortality of millions of people and animals annually. Vaccination against these organisms and their toxins has proved rather ineffective in providing long-term protection from disease. In response to the debilitating effects of AB toxins on epithelial cells of the digestive mucosa, mechanisms underlying toxin immunomodulation of immune responses have become the focus of increasing experimentation. The results of these studies reveal that AB toxins may have a beneficial application as adjuvants for the enhancement of immune protection against infection and autoimmunity. Here, we examine similarities and differences in the structure and function of bacterial and plant AB toxins that underlie their toxicity and their exceptional properties as immunomodulators for stimulating immune responses against infectious disease and for immune suppression of organ-specific autoimmunity.

  15. Current-Driven Switch-Mode Audio Power Amplifiers

    DEFF Research Database (Denmark)

    Knott, Arnold; Buhl, Niels Christian; Andersen, Michael A. E.

    2012-01-01

    The conversion of electrical energy into sound waves by electromechanical transducers is proportional to the current through the coil of the transducer. However virtually all audio power amplifiers provide a controlled voltage through the interface to the transducer. This paper is presenting...... a switch-mode audio power amplifier not only providing controlled current but also being supplied by current. This results in an output filter size reduction by a factor of 6. The implemented prototype shows decent audio performance with THD + N below 0.1 %....

  16. Investigation of electrically exploded large area foil for current switching

    International Nuclear Information System (INIS)

    Chernyshev, V.K.; Boyko, A.M.; Kostyukov, V.N.; Kuzyaev, A.I.; Kulagin, A.A.; Mamyshev, V.I.; Mezhevov, A.B.; Nechaev, A.I.; Petrukhin, A.A.; Protasov, M.S.; Shevtsov, V.I.; Yakubov, V.B.

    1990-01-01

    The possibility of microsecond ∼40 MA current switching from EMG into a quasiconstant inductive load by an electrically exploded foil is investigated. The copper foil of large area, S ∼ 10 4 cm 2 , was placed between thin-walled insulators into a coaxial transmission line (TL). This paper shows a conceptual device scheme. To feed a foil opening switch (FOS), a disc explosive magnetic generator (DEMG) with 20 μs current rise time was employed. An inductive coaxial load was connected to a FOS at a moment, that was close to the foil vaporization start by means of an axisymmetric explosive current commutator (ECC)

  17. Current-induced switching of magnetic molecules on topological insulator surfaces

    Science.gov (United States)

    Locane, Elina; Brouwer, Piet W.

    2017-03-01

    Electrical currents at the surface or edge of a topological insulator are intrinsically spin polarized. We show that such surface or edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or edge of a topological insulator. For the edge of a two-dimensional topological insulator as well as for the surface of a three-dimensional topological insulator the application of a well-chosen surface or edge current can lead to a complete polarization of the molecule if the molecule's magnetic anisotropy axis is appropriately aligned with the current direction. For a generic orientation of the molecule a nonzero but incomplete polarization is obtained. We calculate the probability distribution of the magnetic states and the switching rates as a function of the applied current.

  18. Ab initio and empirical studies on the asymmetry of molecular current-voltage characteristics

    International Nuclear Information System (INIS)

    Hoft, R C; Armstrong, N; Ford, M J; Cortie, M B

    2007-01-01

    We perform theoretical calculations of the tunnelling current through various small organic molecules sandwiched between gold electrodes by using both a tunnel barrier model and an ab initio transport code. The height of the tunnelling barrier is taken to be the work function of gold as modified by the adsorbed molecule and calculated from an ab initio electronic structure code. The current-voltage characteristics of these molecules are compared. Asymmetry is introduced into the system in two ways: an asymmetric molecule and a gap between the molecule and the right electrode. The latter is a realistic situation in scanning probe experiments. The asymmetry is also realized in the tunnel barrier model by two distinct work functions on the left and right electrodes. Significant asymmetry is observed in the ab initio i(V) curves. The tunnel barrier i(V) curves show much less pronounced asymmetry. The relative sizes of the currents through the molecules are compared. In addition, the performance of the WKB approximation is compared to the results obtained from the exact Schroedinger solution to the tunnelling barrier problem

  19. Soft controller switching technique to minimize the torque and current pulsations of a SCIM during its reswitching

    International Nuclear Information System (INIS)

    Larik, A.S.

    2010-01-01

    The direct-on-line starting of induction motor draws heavy current and to limit this Inrush current to a safe level normally a star-delta switch is used. However, the switching over from star to delta causes over current transients and this leads to torque pulsations. Therefore, in this paper the current and torque pulsations developed during the switching process are focused and a soft-switched controller is devised to minimize the re-closure transient currents and torque pulsations during star-delta switching of induction motor. The designed system can readily handles the sensing of favorable conditions of re closure of a switched-off running induction motor and it minimizes the inrush current and hence the pulsations of torque of all types of induction motors, whether, single-phase or three phase. An investigation is made into the transient currents and pulsation torques generated due to opening the circuit of a running induction motor and the switching pattern of star-delta switching. The re-switching control scheme for the induction motor is practically tested in the laboratory with and without soft controller. (author)

  20. Stable Amplification and High Current Drop Bistable Switching in Supercritical GaAs Tills

    DEFF Research Database (Denmark)

    Izadpanah, S.H; Jeppsson, B; Jeppesen, Palle

    1974-01-01

    Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance.......Bistable switching with current drops of 40% and switching times of 100 ps are obtained in pulsed operation of 10¿m supercritically doped n+ nn+ GaAs Transferred Electron Devices (TEDs). When CW-operated the same devices exhibit a 5-17 GHz bandwidth for the stable negative resistance....

  1. Nonlinear Deadbeat Current Control of a Switched Reluctance Motor

    OpenAIRE

    Rudolph, Benjamin

    2009-01-01

    High performance current control is critical to the success of the switched reluctance motor (SRM). Yet high motor phase nonlinearities in the SRM place extra burden on the current controller, rendering it the weakest link in SRM control. In contrast to linear motor control techniques that respond to current error, the deadbeat controller calculates the control voltage by the current command, phase current, rotor position and applied phase voltage. The deadbeat controller has demonstrated sup...

  2. Development of high electrical resistance persistent current switch for high speed energization system

    International Nuclear Information System (INIS)

    Jizo, Y.; Furuta, Y.; Nakashima, H.

    1986-01-01

    Japanese National Railways is now developing a superconducting magnetically-levitated train system. A persistent current switch is incorporated in the super-conducting magnet used in the magnetically-levitated train. In recent years, the switch has been required to have higher electrical resistance during its off-state in order to realize the high speed energization/de-energization system of the superconducting magnets. The system aims to decrease evaporation volume of liquid helium during the energization/de-energization of the magnet, by means of energizing the superconducting magnet with high current increasing/decreasing rate. Consequently, it would be possible to decrease the dependence of the on-board magnet system upon the ground cooling system. Through the development of a stable superconductive wire material and a coil structure for the persistent current switch using many small model switches which were produced in order to improve their current carrying capacities, the authors have succeeded in manufacturing the high electrical resistance persistent current switch whose electrical resistance was 5 ohms. The switch, of cylindrical shape, has a diameter of about 100mm, a length of about 100mm. These 5 ohm PCSs are now functioning in stable conditions being incorporated in the superconducting magnets of No.2 vehicle of MLU001 at the JNR's Miyazaki test track. Further, the authors are now developing the PCS of still higher resistance values, such as 50 ohms, through studies for stabilization in structural aspects of the winding and obtaining results therefrom

  3. Current induced magnetization switching in Co/Cu/Ni-Fe nanopillar with orange peel coupling

    International Nuclear Information System (INIS)

    Aravinthan, D.; Daniel, M.; Sabareesan, P.

    2015-01-01

    The impact of orange peel coupling on spin current induced magnetization switching in a Co/Cu/Ni-Fe nanopillar device is investigated by solving the switching dynamics of magnetization of the free layer governed by the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. The value of the critical current required to initiate the magnetization switching is calculated analytically by solving the LLGS equation and verified the same through numerical analysis. Results of numerical simulation of the LLGS equation using Runge-Kutta fourth order procedure shows that the presence of orange peel coupling between the spacer and the ferromagnetic layers reduces the switching time of the nanopillar device from 67 ps to 48 ps for an applied current density of 4 × 10 12 Am −2 . Also, the presence of orange peel coupling reduces the critical current required to initiate switching, and in this case, from 1.65 × 10 12 Am −2 to 1.39 × 10 12 Am −2

  4. The impact of switching capacitor banks with very high inrush current on switchgear

    NARCIS (Netherlands)

    Smeets, R.P.P.; Wiggers, R.; Bannink, H.; Kuivenhoven, S.; Chakraborty, S.; Sandolache, G.

    2012-01-01

    Capacitor banks are installed in an increasing number in order to control power quality issues in the transmission and distribution networks. Due to load fluctuation, switching of capacitor banks is normally a daily operation. Although the current to be switched (e.g. the normal load current) is far

  5. A Novel Application of Zero-Current-Switching Quasiresonant Buck Converter for Battery Chargers

    Directory of Open Access Journals (Sweden)

    Kuo-Kuang Chen

    2011-01-01

    Full Text Available The main purpose of this paper is to develop a novel application of a resonant switch converter for battery chargers. A zero-current-switching (ZCS converter with a quasiresonant converter (QRC was used as the main structure. The proposed ZCS dc–dc battery charger has a straightforward structure, low cost, easy control, and high efficiency. The operating principles and design procedure of the proposed charger are thoroughly analyzed. The optimal values of the resonant components are computed by applying the characteristic curve and electric functions derived from the circuit configuration. Experiments were conducted using lead-acid batteries. The optimal parameters of the resonance components were determined using the load characteristic curve diagrams. These values enable the battery charger to turn on and off at zero current, resulting in a reduction of switching losses. The results of the experiments show that when compared with the traditional pulse-width-modulation (PWM converter for a battery charger, the buck converter with a zero- current-switching quasiresonant converter can lower the temperature of the activepower switch.

  6. Transport currents along c-axis and (a,b) planes in YBCO single domain materials. Critical current densities and normal-superconducting transitions

    International Nuclear Information System (INIS)

    Porcar, L.; Bourgault, D.; Chaud, X.; Noudem, J.G.; Tournier, R.; Tixador, P.

    1998-01-01

    High transport currents along the (a,b) planes and along the c-axis have been measured in pulsed current of different pseudo-frequencies. Self field losses and transport current of 8000 A (20000 A cm -2 ) have been measured in Y 1 Ba 2 Cu 3 O 7-δ bars textured by the melting zone technique. Critical currents as high as 500 A (90000 A cm -2 ) along the (a,b) planes or 3000 A (7500 A cm -2 ) along the c-axis have been measured. For both orientations, the transition from the normal state to the superconducting state has been observed. Electric field of 1000 V m -1 and study of the superconducting state recovery are reported. (orig.)

  7. Study of electron and ion fluxes in a microsecond plasma switch during current switch phase at power level of 0,2TW

    International Nuclear Information System (INIS)

    Anan'in, P.S.; Bystritskij, V.M.; Karpov, V.B.; Krasik, Ya.E.; Lisitsin, I.V.; Sinebryukhov, A.A.

    1991-01-01

    Results of experimental study of dynamics of electron and ion losses in a microsecond plasma switch (PS), carring the short-circuited inductance load and operating with open potential electrode, are presented. Investigations were carried out at 'DUBL' microsecond generator with stored energy of 56 kJ and 300 kA current amplitude in inductive storage. The investigations showed that primary channel of energy losses, limiting microsecond plasma switch impedance, are energy losses: they constitute 70% of all losses under inductive load and 30% during operation with an open cathode. It was shown that ion current in PS attains its peak value by the end of conductivity phase and it does not increase in switch phase. With an open cathode, PS impedance is defined by an electron beam, forming during current switch phase and propagating towards external electrode end. In this high-current electron beam H + ions, accelerated up to 3.5-4.2 MeV energy, and outcoming from PS plasma boundary, were detected

  8. A graphite based STT-RAM cell with reduction in switching current

    International Nuclear Information System (INIS)

    Varghani, Ali; Peiravi, Ali

    2015-01-01

    Spin Transfer Torque Random Access Memory (STT-RAM) is a serious candidate for “universal memory” because of its non-volatility, fast access time, high density, good scalability, high endurance and relatively low power dissipation. However, problems with low write speed and large write current are important existing challenges in STT-RAM design and there is a tradeoff between them and data retention time. In this study, a novel STT-RAM cell structure which uses perfect graphite based Magnetic Tunnel Junction (MTJ) is proposed. First, the cross-section of the structure is selected to be an ellipse of 45 nm and 180 nm dimensions and a six-layer graphite is used as tunnel barrier. By passing a lateral current with a short pulse width (before applying STT current and independent of it) through four middle graphene layers of the tunnel barrier, a 27% reduction in the amplitude of the switching current (for fast switching time of 2 ns) or a 58% reduction in its pulse width is achieved without any reduction in data retention time. Finally, the effect of downscaling of technology on the proposed structure is evaluated. A reduction of 31.6% and 9% in switching current is achieved for 90 and 22 nm cell width respectively by passing sufficient current (100 µA with 0.1 ns pulse width) through the tunnel barrier. Simulations are done using Object Oriented Micro Magnetic Framework (OOMMF). - Highlights: • A new STT-RAM cell structure which uses perfect graphite based MTJ is proposed. • The amplitude of the switching current or its pulsewidth can be reduced without any sacrifice of data retention time. • The proposed design is down-scalable from 90 nm to 22 nm. • Micromagnetic simulations are done with OOMMF

  9. Current induced magnetization switching in Co/Cu/Ni-Fe nanopillar with orange peel coupling

    Energy Technology Data Exchange (ETDEWEB)

    Aravinthan, D.; Daniel, M. [Centre for Nonlinear Dynamics, School of Physics, Bharathidasan University, Tiruchirappalli - 620 024 (India); Sabareesan, P. [Centre for Nonlinear Science and Engineering, School of Electrical and Electronics Engineering, SASTRA University, Thanjavur - 613 401 (India)

    2015-07-15

    The impact of orange peel coupling on spin current induced magnetization switching in a Co/Cu/Ni-Fe nanopillar device is investigated by solving the switching dynamics of magnetization of the free layer governed by the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. The value of the critical current required to initiate the magnetization switching is calculated analytically by solving the LLGS equation and verified the same through numerical analysis. Results of numerical simulation of the LLGS equation using Runge-Kutta fourth order procedure shows that the presence of orange peel coupling between the spacer and the ferromagnetic layers reduces the switching time of the nanopillar device from 67 ps to 48 ps for an applied current density of 4 × 10{sup 12}Am{sup −2}. Also, the presence of orange peel coupling reduces the critical current required to initiate switching, and in this case, from 1.65 × 10{sup 12}Am{sup −2} to 1.39 × 10{sup 12}Am{sup −2}.

  10. Current-induced switching in a magnetic insulator

    Science.gov (United States)

    Avci, Can Onur; Quindeau, Andy; Pai, Chi-Feng; Mann, Maxwell; Caretta, Lucas; Tang, Astera S.; Onbasli, Mehmet C.; Ross, Caroline A.; Beach, Geoffrey S. D.

    2017-03-01

    The spin Hall effect in heavy metals converts charge current into pure spin current, which can be injected into an adjacent ferromagnet to exert a torque. This spin-orbit torque (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets. In the case of magnetic insulators (MIs), although charge currents cannot flow, spin currents can propagate, but current-induced control of the magnetization in a MI has so far remained elusive. Here we demonstrate spin-current-induced switching of a perpendicularly magnetized thulium iron garnet film driven by charge current in a Pt overlayer. We estimate a relatively large spin-mixing conductance and damping-like SOT through spin Hall magnetoresistance and harmonic Hall measurements, respectively, indicating considerable spin transparency at the Pt/MI interface. We show that spin currents injected across this interface lead to deterministic magnetization reversal at low current densities, paving the road towards ultralow-dissipation spintronic devices based on MIs.

  11. Two Bistable Switches Govern M Phase Entry.

    Science.gov (United States)

    Mochida, Satoru; Rata, Scott; Hino, Hirotsugu; Nagai, Takeharu; Novák, Béla

    2016-12-19

    The abrupt and irreversible transition from interphase to M phase is essential to separate DNA replication from chromosome segregation. This transition requires the switch-like phosphorylation of hundreds of proteins by the cyclin-dependent kinase 1 (Cdk1):cyclin B (CycB) complex. Previous studies have ascribed these switch-like phosphorylations to the auto-activation of Cdk1:CycB through the removal of inhibitory phosphorylations on Cdk1-Tyr15 [1, 2]. The positive feedback in Cdk1 activation creates a bistable switch that makes mitotic commitment irreversible [2-4]. Here, we surprisingly find that Cdk1 auto-activation is dispensable for irreversible, switch-like mitotic entry due to a second mechanism, whereby Cdk1:CycB inhibits its counteracting phosphatase (PP2A:B55). We show that the PP2A:B55-inhibiting Greatwall (Gwl)-endosulfine (ENSA) pathway is both necessary and sufficient for switch-like phosphorylations of mitotic substrates. Using purified components of the Gwl-ENSA pathway in a reconstituted system, we found a sharp Cdk1 threshold for phosphorylation of a luminescent mitotic substrate. The Cdk1 threshold to induce mitotic phosphorylation is distinctly higher than the Cdk1 threshold required to maintain these phosphorylations-evidence for bistability. A combination of mathematical modeling and biochemical reconstitution show that the bistable behavior of the Gwl-ENSA pathway emerges from its mutual antagonism with PP2A:B55. Our results demonstrate that two interlinked bistable mechanisms provide a robust solution for irreversible and switch-like mitotic entry. Copyright © 2016 Elsevier Ltd. All rights reserved.

  12. Dependence of the Spin Transfer Torque Switching Current Density on the Exchange Stiffness Constant

    OpenAIRE

    You, Chun-Yeol

    2012-01-01

    We investigate the dependence of the switching current density on the exchange stiffness constant in the spin transfer torque magnetic tunneling junction structure with micromagnetic simulations. Since the widely accepted analytic expression of the switching current density is based on the macro-spin model, there is no dependence of the exchange stiffness constant. When the switching is occurred, however, the spin configuration forms C-, S-type, or complicated domain structures. Since the spi...

  13. Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor.

    Science.gov (United States)

    Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

    2017-12-01

    We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr_{2}VO_{3}FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C_{4} (2×2) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C_{4} (2×2) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C_{4} state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

  14. Current-induced magnetic switching of a single molecule magnet on a spin valve

    International Nuclear Information System (INIS)

    Zhang, Xiao; Wang, Zheng-Chuan; Zheng, Qing-Rong; Zhu, Zheng-Gang; Su, Gang

    2015-01-01

    The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs

  15. Current-induced magnetic switching of a single molecule magnet on a spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiao [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Wang, Zheng-Chuan, E-mail: wangzc@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zheng, Qing-Rong [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); Zhu, Zheng-Gang [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China); School of Electronics, Electric and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 (China); Su, Gang, E-mail: gsu@ucas.ac.cn [Theoretical Condensed Matter Physics and Computational Materials Physics Laboratory, School of Physics, University of Chinese Academy of Sciences, Beijing 100049 (China)

    2015-04-17

    The current-induced magnetic switching of a single-molecule magnet (SMM) attached on the central region of a spin valve is explored, and the condition for the switching current is derived. Electrons flowing through the spin valve will interact with the SMM via the s–d exchange interaction, producing the spin accumulation that satisfies the spin diffusion equation. We further describe the spin motion of the SMM by a Heisenberg-like equation. Based on the linear stability analysis, we obtain the critical current from two coupled equations. The results of the critical current versus the external magnetic field indicate that one can manipulate the magnetic state of the SMM by an external magnetic field. - Highlights: • We theoretically study the current-induced magnetic switching of the SMM. • We describe the spin motion of the SMM by a Heisenberg-like equation. • We describe the spin accumulation by the spin diffusion equation. • We obtain the critical current by the linear stability analysis. • Our approach can be easily extended to other SMMs.

  16. A graphite based STT-RAM cell with reduction in switching current

    Science.gov (United States)

    Varghani, Ali; Peiravi, Ali

    2015-10-01

    Spin Transfer Torque Random Access Memory (STT-RAM) is a serious candidate for "universal memory" because of its non-volatility, fast access time, high density, good scalability, high endurance and relatively low power dissipation. However, problems with low write speed and large write current are important existing challenges in STT-RAM design and there is a tradeoff between them and data retention time. In this study, a novel STT-RAM cell structure which uses perfect graphite based Magnetic Tunnel Junction (MTJ) is proposed. First, the cross-section of the structure is selected to be an ellipse of 45 nm and 180 nm dimensions and a six-layer graphite is used as tunnel barrier. By passing a lateral current with a short pulse width (before applying STT current and independent of it) through four middle graphene layers of the tunnel barrier, a 27% reduction in the amplitude of the switching current (for fast switching time of 2 ns) or a 58% reduction in its pulse width is achieved without any reduction in data retention time. Finally, the effect of downscaling of technology on the proposed structure is evaluated. A reduction of 31.6% and 9% in switching current is achieved for 90 and 22 nm cell width respectively by passing sufficient current (100 μA with 0.1 ns pulse width) through the tunnel barrier. Simulations are done using Object Oriented Micro Magnetic Framework (OOMMF).

  17. Limits to the critical transport current in superconducting (Bi,Pb)2Sr2Ca2Cu3O10 silver-sheathed tapes: The railway-switch model

    International Nuclear Information System (INIS)

    Hensel, B.; Grasso, G.; Fluekiger, R.

    1995-01-01

    We have proposed the ''railway-switch'' model to describe the superconducting transport current in (Bi,Pb) 2 Sr 2 Ca 2 Cu 3 O 10 silver-sheathed tapes. The model assumes that in the textured polycrystalline filament the frequent small-angle c-axis tilt grain boundaries (''railway switches'') constitute strong links for the supercurrent. With the objective to identify the mechanisms that limit the critical-current density in the tapes we present measurements of the transport critical current normal to the tape plane and of the current-transfer length along the tape axis. From I-V curves we obtain the longitudinal critical-current distribution and compare it to the thickness variation of the filament. The experiments have been performed on monofilamentary powder-in-tube samples prepared in long lengths by rolling as the only tape-forming process. For all investigated samples the critical-current density at T=77 K in self-field was in the range j c =20--30 kA/cm 2 . We conclude that the dominant limitation for the transport critical current in the tapes is imposed by the low intragrain critical-current density j c c along the c axis (as compared to the in-plane critical-current density j c ab ) and by the even lower critical-current density j c t across twist boundaries or intergrowths. Possibilities for an improvement of the performance of the (Bi,Pb) 2 Sr 2 Ca 2 Cu 3 O 10 silver-sheathed tapes are discussed

  18. A Digital Hysteresis Current Control for Half-Bridge Inverters with Constrained Switching Frequency

    Directory of Open Access Journals (Sweden)

    Triet Nguyen-Van

    2017-10-01

    Full Text Available This paper proposes a new robustly adaptive hysteresis current digital control algorithm for half-bridge inverters, which plays an important role in electric power, and in various applications in electronic systems. The proposed control algorithm is assumed to be implemented on a high-speed Field Programmable Gate Array (FPGA circuit, using measured data with high sampling frequency. The hysteresis current band is computed in each switching modulation period based on both the current error and the negative half switching period during the previous modulation period, in addition to the conventionally used voltages measured at computation instants. The proposed control algorithm is derived by solving the optimization problem—where the switching frequency is always constrained at below the desired constant frequency—which is not guaranteed by the conventional method. The optimization problem also keeps the output current stable around the reference, and minimizes power loss. Simulation results show good performances of the proposed algorithm compared with the conventional one.

  19. Quasi-Resonant Full-Wave Zero-Current Switching Buck Converter Design, Simulation and Application

    OpenAIRE

    Yanik, G.; Isen, E.

    2015-01-01

    —This paper presents a full wave quasi-resonant zerocurrent switching buck converter design, simulation and application. The converter control uses with zero-current switching (ZCS) technique to decrease the switching losses. Comparing to conventional buck converter, resonant buck converter includes a resonant tank equipped with resonant inductor and capacitor. The converter is analyzed in mathematical for each subintervals. Depending on the desired input and output electrical quantities, con...

  20. Controlled parity switch of persistent currents in quantum ladders

    Science.gov (United States)

    Filippone, Michele; Bardyn, Charles-Edouard; Giamarchi, Thierry

    2018-05-01

    We investigate the behavior of persistent currents for a fixed number of noninteracting fermions in a periodic quantum ladder threaded by Aharonov-Bohm and transverse magnetic fluxes Φ and χ . We show that the coupling between ladder legs provides a way to effectively change the ground-state fermion-number parity, by varying χ . Specifically, we demonstrate that varying χ by 2 π (one flux quantum) leads to an apparent fermion-number parity switch. We find that persistent currents exhibit a robust 4 π periodicity as a function of χ , despite the fact that χ →χ +2 π leads to modifications of order 1 /N of the energy spectrum, where N is the number of sites in each ladder leg. We show that these parity-switch and 4 π periodicity effects are robust with respect to temperature and disorder, and outline potential physical realizations using cold atomic gases and photonic lattices, for bosonic analogs of the effects.

  1. Leakage Current Suppression with A Novel Six-Switch Photovoltaic Grid-Connected Inverter

    DEFF Research Database (Denmark)

    Wei, Baoze; Guo, Xiaoqiang; Guerrero, Josep M.

    2015-01-01

    In order to solve the problem of the leakage current in non-isolated photovoltaic (PV) systems, a novel six-switch topology and control strategy are proposed in this paper. The inductor-bypass strategy solves the common-mode voltage limitation of the conventional six-switch topology in case...... of unmatched inductances. And the stray capacitor voltage of the non-isolated photovoltaic system is free of high frequency ripples. Theoretical analysis and simulation are carried out to verify the proposed topology and its control strategy. Results indicate that the leakage current suppression can...

  2. Periodically Swapping Modulation (PSM) Strategy for Three-Level (TL) DC/DC Converter with Balanced Switch Currents

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Zhang, Qi

    2018-01-01

    The asymmetrical modulation strategy is widely used in various types of three-level (TL) DC/DC converters, while the current imbalance among the power switches is one of the important issues. In this paper, a novel periodically swapping modulation (PSM) strategy is proposed for balancing the power...... switches’ currents in various types of TL DC/DC converters. In the proposed PSM strategy, the driving signals of the switch pairs are swapped periodically, which guarantees that the currents through the power switches are kept balanced in every two switching periods. Therefore, the proposed PSM...... strategy can effectively improve the reliability of the converter by balancing the power losses and thermal stresses among the power switches. The operation principle and performances of the proposed PSM strategy are analyzed in detail. Finally, the simulation and experimental results are presented...

  3. Magnetic switching of a single molecular magnet due to spin-polarized current

    Science.gov (United States)

    Misiorny, Maciej; Barnaś, Józef

    2007-04-01

    Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic leads (electrodes) is investigated theoretically. Magnetic moments of the leads are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through the barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system, as well as the spin relaxation times of the SMM, are calculated from the Fermi golden rule. It is shown that spin of the SMM can be reversed by applying a certain voltage between the two magnetic electrodes. Moreover, the switching may be visible in the corresponding current-voltage characteristics.

  4. Verification of the short-circuit current making capability of high-voltage switching devices

    NARCIS (Netherlands)

    Smeets, R.P.P.; Linden, van der W.A.

    2001-01-01

    Switching-in of short-circuit current leads to pre-arcing in the switching device. Pre-arcing affects the ability of switchgear to close and latch. In three-phase systems, making is associated with transient voltage phenomena that may have a significant impact on the duration of the pre-arcing

  5. Pseudospark switches

    International Nuclear Information System (INIS)

    Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

    1987-01-01

    The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

  6. A new soft switched push pull current fed converter for fuel cell applications

    International Nuclear Information System (INIS)

    Delshad, Majid; Farzanehfard, Hosein

    2011-01-01

    In this paper a new zero voltage switching current fed push pull dc-dc converter is proposed for fuel cell generation system. The auxiliary circuit in this converter, not only absorbs the voltage surge across the switches at turn off instance, but also provides zero voltage switching condition for all converter switches. Therefore, the converter efficiency is increased and size and weight of the converter can be decreased. Also implementation of control circuit is very simple since the converter is PWM controlled. In this paper, the proposed dc-dc converter operating modes are analyzed and to verify the converter operation a laboratory prototype is implemented and the experimental results are presented.

  7. On-line Monitoring Device for High-voltage Switch Cabinet Partial Discharge Based on Pulse Current Method

    Science.gov (United States)

    Y Tao, S.; Zhang, X. Z.; Cai, H. W.; Li, P.; Feng, Y.; Zhang, T. C.; Li, J.; Wang, W. S.; Zhang, X. K.

    2017-12-01

    The pulse current method for partial discharge detection is generally applied in type testing and other off-line tests of electrical equipment at delivery. After intensive analysis of the present situation and existing problems of partial discharge detection in switch cabinets, this paper designed the circuit principle and signal extraction method for partial discharge on-line detection based on a high-voltage presence indicating systems (VPIS), established a high voltage switch cabinet partial discharge on-line detection circuit based on the pulse current method, developed background software integrated with real-time monitoring, judging and analyzing functions, carried out a real discharge simulation test on a real-type partial discharge defect simulation platform of a 10KV switch cabinet, and verified the sensitivity and validity of the high-voltage switch cabinet partial discharge on-line monitoring device based on the pulse current method. The study presented in this paper is of great significance for switch cabinet maintenance and theoretical study on pulse current method on-line detection, and has provided a good implementation method for partial discharge on-line monitoring devices for 10KV distribution network equipment.

  8. Dynamic behavior of HTSC opening switch models controlled by short over-critical current pulses

    International Nuclear Information System (INIS)

    Agafonov, A.V.; Krastelev, E.G.; Voronin, V.S.

    1999-01-01

    We present results of experimental research of dynamical properties of thin films of YBa 2 Cu 3 O 7 HTSC-switch models under action of short overcritical current pulses to test this method of control of fast high-power opening switches for accelerator applications

  9. Switched Current Micropower 4th Order Lowpass / Highpass Filter

    DEFF Research Database (Denmark)

    Bogason, Gudmundur

    1993-01-01

    This paper describes a 4th order lowpass / highpass Butterworth filter implemented in switched current technique. The filter has been designed for low power operation. A prototype implementation has been made and it operates with supply voltages down to 2V and with a total supply current of 211Â......¿A at a sampling rate of 50kHz. The chip includes a clock-generator, three current-followers, sample-and-hold and two 4th order filters. The sampling frequency is restricted to approximately 50kHz and the ratio between sampling frequency and cutoff frequency is 12.5. The dynamic-range was found to be 49d...

  10. Leakage Current Suppression with A Novel Six-Switch Photovoltaic Grid-Connected Inverter

    OpenAIRE

    Wei, Baoze; Guo, Xiaoqiang; Guerrero, Josep M.; Savaghebi, Mehdi

    2015-01-01

    In order to solve the problem of the leakage current in non-isolated photovoltaic (PV) systems, a novel six-switch topology and control strategy are proposed in this paper. The inductor-bypass strategy solves the common-mode voltage limitation of the conventional six-switch topology in case of unmatched inductances. And the stray capacitor voltage of the non-isolated photovoltaic system is free of high frequency ripples. Theoretical analysis and simulation are carried out to verify the propos...

  11. Current switching ratio optimization using dual pocket doping engineering

    Science.gov (United States)

    Dash, Sidhartha; Sahoo, Girija Shankar; Mishra, Guru Prasad

    2018-01-01

    This paper presents a smart idea to maximize current switching ratio of cylindrical gate tunnel FET (CGT) by growing pocket layers in both source and channel region. The pocket layers positioned in the source and channel of the device provides significant improvement in ON-state and OFF-state current respectively. The dual pocket doped cylindrical gate TFET (DP-CGT) exhibits much superior performance in term of drain current, transconductance and current ratio as compared to conventional CGT, channel pocket doped CGT (CP-CGT) and source pocket doped CGT (SP-CGT). Further, the current ratio has been optimized w.r.t. width and instantaneous position both the pocket layers. The much improved current ratio and low power consumption makes the proposed device suitable for low-power and high speed application. The simulation work of DP-CGT is done using 3D Sentaurus TCAD device simulator from Synopsys.

  12. Open-loop correction for an eddy current dominated beam-switching magnet.

    Science.gov (United States)

    Koseki, K; Nakayama, H; Tawada, M

    2014-04-01

    A beam-switching magnet and the pulsed power supply it requires have been developed for the Japan Proton Accelerator Research Complex. To switch bunched proton beams, the dipole magnetic field must reach its maximum value within 40 ms. In addition, the field flatness should be less than 5 × 10(-4) to guide each bunched beam to the designed orbit. From a magnetic field measurement by using a long search coil, it was found that an eddy current in the thick endplates and laminated core disturbs the rise of the magnetic field. The eddy current also deteriorates the field flatness over the required flat-top period. The measured field flatness was 5 × 10(-3). By using a double-exponential equation to approximate the measured magnetic field, a compensation pattern for the eddy current was calculated. The integrated magnetic field was measured while using the newly developed open-loop compensation system. A field flatness of less than 5 × 10(-4), which is an acceptable value, was achieved.

  13. Self-Oscillating Soft Switching Envelope Tracking Power Supply for Tetra2 Base Station

    DEFF Research Database (Denmark)

    Høyerby, Mikkel Christian Wendelboe; Andersen, Michael Andreas E.

    2007-01-01

    This paper presents a high-efficiency, high-bandwidth solution to implementing an envelope tracking power supply for the RF power amplifier (RFPA) in a Tetra2 base station. The solution is based on synchronous rectified buck topology, augmented with high-side switch zero-current switching (ZCS......) implemented with a series inductor and an external clamping power supply. Combined with advanced power stage components (die-size MOSFETs), a high-performance fixed-frequency self-oscillating (sliding mode) control strategy and a 4th-order output filter, this leads to a compact, effective and efficient...... overall solution switching at 1MHz with 88-95% efficiency. In a class-AB RFPA amplifying a 50kHz bandwidth QAM Tetra2 signal at 4.6W average output power, the use of tracking supply voltage reduced power dissipation by 25W....

  14. Resistive switching near electrode interfaces: Estimations by a current model

    Science.gov (United States)

    Schroeder, Herbert; Zurhelle, Alexander; Stemmer, Stefanie; Marchewka, Astrid; Waser, Rainer

    2013-02-01

    The growing resistive switching database is accompanied by many detailed mechanisms which often are pure hypotheses. Some of these suggested models can be verified by checking their predictions with the benchmarks of future memory cells. The valence change memory model assumes that the different resistances in ON and OFF states are made by changing the defect density profiles in a sheet near one working electrode during switching. The resulting different READ current densities in ON and OFF states were calculated by using an appropriate simulation model with variation of several important defect and material parameters of the metal/insulator (oxide)/metal thin film stack such as defect density and its profile change in density and thickness, height of the interface barrier, dielectric permittivity, applied voltage. The results were compared to the benchmarks and some memory windows of the varied parameters can be defined: The required ON state READ current density of 105 A/cm2 can only be achieved for barriers smaller than 0.7 eV and defect densities larger than 3 × 1020 cm-3. The required current ratio between ON and OFF states of at least 10 requests defect density reduction of approximately an order of magnitude in a sheet of several nanometers near the working electrode.

  15. Experimental investigation of the ion current distribution in microsecond plasma opening switch

    Energy Technology Data Exchange (ETDEWEB)

    Bystritskij, V; Grigor` ev, S; Kharlov, A; Sinebryukhov, A [Russian Academy of Sciences, Tomsk (Russian Federation). Institute of Electrophysics

    1997-12-31

    This paper is devoted to the investigations of properties of the microsecond plasma opening switch (MPOS) as an ion beam source for surface modification. Two plasma sources were investigated: flash-board and cable guns. The detailed measurements of axial and azimuthal distributions of ion current density in the switch were performed. It was found that the azimuthal inhomogeneity of the ion beam increases from the beginning to the end of MPOS. The advantages and problems of this approach are discussed. (author). 5 figs., 2 refs.

  16. A β-Ta system for current induced magnetic switching in the absence of external magnetic field

    Science.gov (United States)

    Chen, Wenzhe; Qian, Lijuan; Xiao, Gang

    2018-05-01

    Magnetic switching via Giant Spin Hall Effect (GSHE) has received great interest for its role in developing future spintronics logic or memory devices. In this work, a new material system (i.e. a transition metal sandwiched between two ferromagnetic layers) with interlayer exchange coupling is introduced to realize the deterministic field-free perpendicular magnetic switching. This system uses β-Ta, as the GSHE agent to generate a spin current and as the interlayer exchange coupling medium to generate an internal field. The critical switching current density at zero field is on the order of 106 A/cm2 due to the large spin Hall angle of β-Ta. The internal field, along with switching efficiency, depends strongly on the orthogonal magnetization states of two ferromagnetic coupling layers in this system.

  17. Investigation of switch designs for the dynamic load current multiplier scheme on the SPHYNX microsecond linear transformer driver

    International Nuclear Information System (INIS)

    Maysonnave, T.; Bayol, F.; Demol, G.; Almeida, T. d'; Lassalle, F.; Morell, A.; Grunenwald, J.; Chuvatin, A.S.; Pecastaing, L.; De Ferron, A.S.

    2014-01-01

    SPHINX is a microsecond linear transformer driver LTD, used essentially for implosion of Z-pinch loads in direct drive mode. It can deliver a 6-MA current pulse within 800 ns into a Z-pinch load. The dynamic load current multiplier concept enables the current pulse to be modified by increasing its amplitude while reducing its rise time before being delivered to the load. This compact system is made up of concentric electrodes (auto transformer), a dynamic flux extruder (cylindrical wire array), a vacuum convolute (eight post-holes), and a vacuum closing switch, which is the key component of the system. Several different schemes are investigated for designing a vacuum switch suitable for operating the dynamic load current multiplier on the SPHINX generator for various applications, including isentropic compression experiments and Z-pinch radiation effects studies. In particular, the design of a compact vacuum surface switch and a multichannel vacuum switch, located upstream of the load are studied. Electrostatic simulations supporting the switch designs are presented along with test bed experiments. Initial results from shots on the SPHINX driver are also presented. (authors)

  18. Lower-power, high-linearity class-AB current-mode programmable gain amplifier

    International Nuclear Information System (INIS)

    Wu Yiqiang; Wang Zhigong; Wang Junliang; Ma Li; Xu Jian; Tang Lu

    2014-01-01

    A novel class-AB implementation of a current-mode programmable gain amplifier (CPGA) including a current-mode DC offset cancellation loop is presented. The proposed CPGA is based on a current amplifier and provides a current gain in a range of 40 dB with a 1 dB step. The CPGA is characterized by a wide range of current gain variation, a lower power dissipation, and a small chip size. The proposed circuit is fabricated using a 0.18 μm CMOS technology. The CPGA draws a current of less than 2.52 mA from a 1.8 V supply while occupying an active area of 0.099 μm 2 . The measured results show an overall gain variation from 10 to 50 dB with a gain error of less than 0.40 dB. The OP 1dB varies from 11.80 to 13.71 dBm, and the 3 dB bandwidth varies from 22.2 to 34.7 MHz over the whole gain range. (semiconductor integrated circuits)

  19. The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Zhang, Ping [Tianjin University, School of Electrical and Information Engineering, Tianjin (China); Lan, Kuibo [Tianjin University, School of Microelectronics, Tianjin (China)

    2017-07-15

    In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films with different preferred orientation were prepared on platinized silicon substrates by a modified sol-gel method. Our results indicate that the polarization switching current in PZT thin films is dependent on preferred orientation and poling temperature. In our measurements, (111)-oriented PZT has a larger polarization switching current than randomly oriented PZT, and with the increase of the degree of (111) preferred orientation and the poling temperature, the polarization switching current gradually increase. Considering the contact of PZT thin film with electrodes, the space-charged limited conduction (SCLC) combined with domain switching mechanism may be responsible for such phenomena. By analyzing the conduction data, we found the interface-limited Schottky emission (ES) and bulk-limited Poole-Frenkel hopping (PF) are not suitable for our samples. (orig.)

  20. Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot.

    Science.gov (United States)

    Yamazaki, Shiro; Maeda, Keisuke; Sugimoto, Yoshiaki; Abe, Masayuki; Zobač, Vladimír; Pou, Pablo; Rodrigo, Lucia; Mutombo, Pingo; Pérez, Ruben; Jelínek, Pavel; Morita, Seizo

    2015-07-08

    We assemble bistable silicon quantum dots consisting of four buckled atoms (Si4-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices.

  1. A Novel Application of Zero-Current-Switching Quasiresonant Buck Converter for Battery Chargers

    OpenAIRE

    Kuo-Kuang Chen

    2011-01-01

    The main purpose of this paper is to develop a novel application of a resonant switch converter for battery chargers. A zero-current-switching (ZCS) converter with a quasiresonant converter (QRC) was used as the main structure. The proposed ZCS dc–dc battery charger has a straightforward structure, low cost, easy control, and high efficiency. The operating principles and design procedure of the proposed charger are thoroughly analyzed. The optimal values of the resonant components are compute...

  2. Anomalous Kondo-Switching Effect of a Spin-Flip Quantum Dot Embedded in an Aharonov-Bohm Ring

    International Nuclear Information System (INIS)

    Chen Xiongwen; Shi Zhengang; Song Kehui

    2009-01-01

    We theoretically investigate the Kondo effect of a quantum dot embedded in a mesoscopic Aharonov-Bohm (AB) ring in the presence of the spin flip processes by means of the one-impurity Anderson Hamiltonian. Based on the slave-boson mean-field theory, we find that in this system the persistent current (PC) sensitively depends on the parity and size of the AB ring and can be tuned by the spin-flip scattering (R). In the small AB ring, the PC is suppressed due to the enhancing R weakening the Kondo resonance. On the contrary, in the large AB ring, with R increasing, the peak of PC firstly moves up to max-peak and then down. Especially, the PC phase shift of π appears suddenly with the proper value of R, implying the existence of the anomalous Kondo effect in this system. Thus this system may be a candidate for quantum switch. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Operation of a semiconductor opening switch at ultrahigh current densities

    International Nuclear Information System (INIS)

    Lyubutin, S. K.; Rukin, S. N.; Slovikovsky, B. G.; Tsyranov, S. N.

    2012-01-01

    The operation of a semiconductor opening switch (SOS diode) at cutoff current densities of tens of kA/cm 2 is studied. In experiments, the maximum reverse current density reached 43 kA/cm 2 for ∼40 ns. Experimental data on SOS diodes with a p + -p-n-n + structure and a p-n junction depth from 145 to 180 μm are presented. The dynamics of electron-hole plasma in the diode at pumping and current cutoff stages is studied by numerical simulation methods. It is shown that current cutoff is associated with the formation of an electric field region in a thin (∼45 μm) layer of the structure’s heavily doped p-region, in which the acceptor concentration exceeds 10 16 cm −3 , and the current cutoff process depends weakly on the p-n junction depth.

  4. On a mechanism of switching off low-hybrid run away currents in tokamak devices

    International Nuclear Information System (INIS)

    Budnikov, V.N.; Esipov, L.A.; Irzak, M.A.

    1990-01-01

    The problem of the generation of low-hybrid run-away currents (LR) in tokamak devices is described. The mechanism of switching off LRCs is considered. Qualitative representation of the density limit, the transitions of which stops the generation of currents, is given

  5. Plasma erosion opening switch in the double-pulse operation mode of a high-current electron accelerator

    International Nuclear Information System (INIS)

    Isakov, I.F.; Lopatin, V.S.; Remnev, G.E.

    1987-01-01

    This paper reports the results of investigations of the operation of a fast current opening switch, with a 10/sup 13/-10/sup 16/ plasma density produced either by dielectric surface flashover or by explosive emission of graphite. A series of two pulses was applied to two diodes in parallel. The first pulse produced plasma in the first diode which closed that diode gap by the arrival time of the second pulse. The first, shorted, diode then acted as an erosion switch for the second pulse. A factor of 2.5-3 power multiplication was obtained under optimum conditions. The opening-switch resistance during the magnetic insulation phase, neglecting the electron losses between the switch and the generating diode, exceeded 100 Ω. The duration of the rapid opening phase was less than 5 ns under optimum conditions. This method of plasma production does not require external plasma sources, and permits a wide variation of plasma density, which in turn allows high inductor currents and stored energies

  6. Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis

    Directory of Open Access Journals (Sweden)

    Aurelian Crunteanu, Julien Givernaud, Jonathan Leroy, David Mardivirin, Corinne Champeaux, Jean-Christophe Orlianges, Alain Catherinot and Pierre Blondy

    2010-01-01

    Full Text Available Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal–insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal–insulator transition in VO2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO2-based switching (more than 260 million cycles without failure compared with the voltage-activated mode (breakdown at around 16 million activation cycles. The evolution of the electrical self-oscillations of a VO2-based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

  7. The Effects of 10 Hz Transcranial Alternating Current Stimulation on Audiovisual Task Switching

    Directory of Open Access Journals (Sweden)

    Michael S. Clayton

    2018-02-01

    Full Text Available Neural oscillations in the alpha band (7–13 Hz are commonly associated with disengagement of visual attention. However, recent studies have also associated alpha with processes of attentional control and stability. We addressed this issue in previous experiments by delivering transcranial alternating current stimulation at 10 Hz over posterior cortex during visual tasks (alpha tACS. As this stimulation can induce reliable increases in EEG alpha power, and given that performance on each of our visual tasks was negatively associated with alpha power, we assumed that alpha tACS would reliably impair visual performance. However, alpha tACS was instead found to prevent both deteriorations and improvements in visual performance that otherwise occurred during sham & 50 Hz tACS. Alpha tACS therefore appeared to exert a stabilizing effect on visual attention. This hypothesis was tested in the current, pre-registered experiment by delivering alpha tACS during a task that required rapid switching of attention between motion, color, and auditory subtasks. We assumed that, if alpha tACS stabilizes visual attention, this stimulation should make it harder for people to switch between visual tasks, but should have little influence on transitions between auditory and visual subtasks. However, in contrast to this prediction, we observed no evidence of impairments in visuovisual vs. audiovisual switching during alpha vs. control tACS. Instead, we observed a trend-level reduction in visuoauditory switching accuracy during alpha tACS. Post-hoc analyses showed no effects of alpha tACS in response time variability, diffusion model parameters, or on performance of repeat trials. EEG analyses also showed no effects of alpha tACS on endogenous or stimulus-evoked alpha power. We discuss possible explanations for these results, as well as their broader implications for current efforts to study the roles of neural oscillations in cognition using tACS.

  8. A novel solid-state control system for the minimization of re-switching transient currents of induction motor

    International Nuclear Information System (INIS)

    Abro, M.R.; Larik, A.S.; Mahar, M.A.

    2005-01-01

    This work is an investigation into the minimizing re-closure transient currents of induction motors by activating NOVEL solid state control system switching at a matched condition. This emphasis is placed upon-circuit transition starting of cage motors, particularly star-delta switching. The initial study is carried out on single-phase induction motion. This system is capable of effective sensing re-closure of a switched off running single-phase induction motor. Further this scheme could be developed to give sequential delta closure of a switched off running three-phase induction motor during 1st cycles following the opening of the star mode. Consideration is also given to the possibility of using sensed re-closure to minimize transient whenever the supply to a running induction motor is briefly interrupted, irrespective of whether the interruption is by accident design. A brief study is made into the type of transient currents generated by opening the circuit of a running induction motor. The importance of the switching pattern for star-delta starting is explained and emphasized. (author)

  9. Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure

    International Nuclear Information System (INIS)

    Volkov, N V; Eremin, E V; Tsikalov, V S; Patrin, G S; Kim, P D; Seong-Cho, Yu; Kim, Dong-Hyun; Chau, Nguyen

    2009-01-01

    The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.

  10. Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching

    OpenAIRE

    Misiorny, Maciej; Barnaś, Józef

    2013-01-01

    Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse anisotropy on transport characteristics and the adatom's/SMM's spin. In particular, we analyze the role of quantum tunneling of magnetization (QTM) in the mechanism of the current-induced spin switching, and show that the QTM phenomenon becomes revealed as resonan...

  11. Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching

    Science.gov (United States)

    Misiorny, Maciej; Barnaś, Józef

    2013-07-01

    Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse anisotropy on transport characteristics and the adatom’s or SMM’s spin. In particular, we analyze the role of quantum tunneling of magnetization (QTM) in the mechanism of the current-induced spin switching, and show that the QTM phenomenon becomes revealed as resonant peaks in the average values of the molecule’s spin and in the charge current. These features appear at some resonant fields and are observable when at least one of the electrodes is ferromagnetic.

  12. External field induced switching of tunneling current in the coupled quantum dots

    OpenAIRE

    Mantsevich, V. N.; Maslova, N. S.; Arseyev, P. I.

    2014-01-01

    We investigated the tunneling current peculiarities in the system of two coupled by means of the external field quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations. It was found that tuning of the external field frequency induces fast multiple tunneling current switching and leads to the negative tunneling conductivity. Special role of multi-electrons states was demonstrated. Moreover we revealed conditions for bistable behavior of the tunneling curre...

  13. A Switch Is Not a Switch: Syntactically-Driven Bilingual Language Control

    Science.gov (United States)

    Gollan, Tamar H.; Goldrick, Matthew

    2018-01-01

    The current study investigated the possibility that language switches could be relatively automatically triggered by context. "Single-word switches," in which bilinguals switched languages on a single word in midsentence and then immediately switched back, were contrasted with more complete "whole-language switches," in which…

  14. Sub-10 nm low current resistive switching behavior in hafnium oxide stack

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Y., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn [Institute of Microelectronics, Peking University, 100871 Beijing (China); IMEC, Kapeldreef 75, B-3001 Heverlee (Belgium); Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee (Belgium); Celano, U.; Xu, Z.; Vandervorst, W. [IMEC, Kapeldreef 75, B-3001 Heverlee (Belgium); Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee (Belgium); Goux, L.; Fantini, A.; Degraeve, R.; Youssef, A.; Jurczak, M. [IMEC, Kapeldreef 75, B-3001 Heverlee (Belgium); Liu, L., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn; Cheng, Y.; Kang, J. [Institute of Microelectronics, Peking University, 100871 Beijing (China)

    2016-03-21

    In this letter, a tip-induced cell relying on the conductive atomic force microscope is proposed. It is verified as a referable replica of an integrated resistive random access memory (RRAM) device. On the basis of this cell, the functionality of sub-10 nm resistive switching is confirmed in hafnium oxide stack. Moreover, the low current switching behavior in the sub-10 nm dimension is found to be more pronounced than that of a 50 × 50 nm{sup 2} device. It shows better ON/OFF ratio and low leakage current. The enhanced memory performance is ascribed to a change in the shape of the conductive filament as the device dimensions are reduced to sub-10 nm. Therefore, device downscaling provides a promising approach for the resistance optimization that benefits the RRAM array design.

  15. Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

    Science.gov (United States)

    Ohta, Akio; Kato, Yusuke; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2018-06-01

    We have studied the resistive switching behaviors of electron beam (EB) evaporated Si-rich oxide (SiO x ) sandwiched between Ni electrodes by applying a constant voltage and current. Additionally, the impact of Ti nanodots (NDs) embedded into SiO x on resistive switching behaviors was investigated because it is expected that NDs can trigger the formation of a conductive filament path in SiO x . The resistive switching behaviors of SiO x show that the response time during resistance switching was decreased by increasing the applied constant current or constant voltage. It was found that Ti-NDs in SiO x enhance the conductive filament path formation owing to electric field concentration by Ti-NDs.

  16. Operation and Modulation of H7 Current Source Inverter with Hybrid SiC and Si Semiconductor Switches

    DEFF Research Database (Denmark)

    Wang, Weiqi; Gao, Feng; Yang, Yongheng

    2018-01-01

    This paper proposes an H7 current source inverter (CSI) consisting of a single parallel-connected silicon carbide (SiC) switch and a traditional silicon (Si) H6 CSI. The proposed H7 CSI takes the advantages of the SiC switch to maintain high efficiency, while significantly increasing the switching...... as an all-SiC-switch converter in terms of high performance and high efficiency with reduced DC inductance. It provides a cost-effective solution to addressing the efficiency issue of conventional CSI systems. Simulations and experiments are performed to validate the effectiveness of the proposed H7 CSI...

  17. Magnetic Switching of a Single Molecular Magnet due to Spin-Polarized Current

    OpenAIRE

    Misiorny, Maciej; Barnas, Józef

    2006-01-01

    Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic electrodes is investigated theoretically. Magnetic moments of the electrodes are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through a barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system as well as the spin relaxation times of the SMM are calculated f...

  18. The Implementation Of Solid State Switches In A Parallel Configuration To Gain Output Current Capacity In A High Current Capacitive Discharge Unit (CDU).

    Energy Technology Data Exchange (ETDEWEB)

    Chaves, Mario Paul [Univ. of New Mexico, Albuquerque, NM (United States)

    2017-07-01

    For my project I have selected to research and design a high current pulse system, which will be externally triggered from a 5V pulse. The research will be conducted in the region of paralleling the solid state switches for a higher current output, as well as to see if there will be any other advantages in doing so. The end use of the paralleled solid state switches will be used on a Capacitive Discharge Unit (CDU). For the first part of my project, I have set my focus on the design of the circuit, selection of components, and simulation of the circuit.

  19. A high-current rail-type gas switch with preionization by an additional corona discharge

    Energy Technology Data Exchange (ETDEWEB)

    Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

    2016-12-15

    The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

  20. A high-current rail-type gas switch with preionization by an additional corona discharge

    International Nuclear Information System (INIS)

    Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G.

    2016-01-01

    The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

  1. High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

    Science.gov (United States)

    Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

    2016-10-01

    Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

  2. Comparison of Ion Beam opening switch and plasma opening switch performance

    International Nuclear Information System (INIS)

    Greenly, J.R.; Rondeau, G.D.; Sheldon, H.T.; Dreike, P.L.

    1986-01-01

    The Ion Beam opening switch (IBOS) experiment has shown that an intense charge-neutralized ion beam can carry current across a vacuum magnetically-insulated transmission line and then transfer that current to a downstream load quickly. In the IBOS experiment, a 10 cm wide parallel plate transmission line was fed up to 100 kA peak current by a 4Ω, 100 ns pulser. An ion beam of up to 100 A/cm/sup 2/, 100-300 keV protons or carbon was injected through the anode of the line in a 10 cm x 10 cm region. The line terminated in either a 15 nH short circuit or an electron diode with variable gap. The ion beam switch was able to carry up to 70 kA of line current before load current began to flow. This model is also quantitatively consistent with the observation that switch conduction current is not linear with either injected ion beam current or switch area

  3. Design and testing of a surface switch for the dynamic load current multiplier on the SPHINX microsecond LTD

    International Nuclear Information System (INIS)

    Maysonnave, T.; Bayol, F.; Demol, G.; Almeida, T. d'; Morell, A.; Lassalle, F.; Grunenwald, J.; Chuvatin, A.S.; Pecastaing, L.; De Ferron, A.S.

    2013-01-01

    SPHINX is a microsecond linear transformer driver located at Atomic Energy Commission (CEA) Gramat (France), which can deliver a current pulse of 6 MA within 800 ns in a Z-pinch load. Using the concept of the dynamic load current multiplier (DLCM), which was proposed by Chuvatin, we expect to increase the load current above 6 MA, while decreasing its rise time to ∼300 ns. The DLCM developed by the CEA Gramat and International Technologies for High Pulsed Power (ITHPP) is a compact system made up of concentric electrodes (auto-transformer), a dynamic flux extruder (cylindrical wire array), a vacuum convolute (eight post-hole rods), and a closing switch (compact vacuum surface switch). The latter is a key component of the system, which is used to prevent the current from flowing into the load until the inductance builds up due to the implosion of the wire array. This paper presents the design and testing of the DLCM surface switch, resulting from both electrostatic simulations and experiments on the SPHINX generator. These studies, carried out either with or without load (open circuit), were valuable for a first experimental evaluation of the DLCM scheme in a microsecond regime and provided detailed information on the surface switch behavior. (authors)

  4. Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

    Science.gov (United States)

    She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui; Zhang, Di; Sommerer, Timothy John; Bray, James William

    2016-12-13

    A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of the one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.

  5. Solvent (acetone-butanol: ab) production

    Science.gov (United States)

    This article describes production of butanol [acetone-butanol-ethanol, (also called AB or ABE or solvent)] by fermentation using both traditional and current technologies. AB production from agricultural commodities, such as corn and molasses, was an important historical fermentation. Unfortunately,...

  6. Magnetization switching and microwave oscillations in nanomagnets driven by spin-polarized currents

    International Nuclear Information System (INIS)

    Bertotti, G.; Magni, A.; Serpico, C.; d'Aquino, M.; Mayergoyz, I. D.; Bonin, R.

    2005-01-01

    Full text: Considerable interest has been generated in recent years by the discovery that a current of spin-polarized electrons can apply appreciable torques to a nanoscale ferromagnet. This mechanism was theoretically predicted and subsequently confirmed by a number of experiments which have shown that spin transfer can indeed induce switching or microwave oscillations of the magnetization. Significant efforts have been devoted to the explanation of these results, in view of the new physics involved and of the possible applications to new types of current-controlled memory cells or microwave sources and resonators . However, the precise nature of magnetization dynamics when spin-polarized currents and external magnetic fields are simultaneously present has not yet been fully understood. The spin-transfer-driven nanomagnet is a nonlinear open system that is forced far from equilibrium by the injection of the current. Thus, the appropriate framework for the study of the problem is nonlinear dynamical system theory and bifurcation theory. In this talk, it is shown that within this framework the complexity and subtlety of spin-torque effects are fully revealed and quantified, once it is recognized that both intrinsic damping and spin transfer can be treated as perturbations of the free precessional dynamics typical of ferromagnetic resonance. Complete stability diagrams are derived for the case where spin torques and external magnetic fields are simultaneously present. Quantitative predictions are made for the critical currents and fields inducing magnetization switching; for the amplitude and frequency of magnetization self-oscillations; for the conditions leading to hysteretic transitions between self-oscillations and stationary states

  7. Voltage-Controlled Square/Triangular Wave Generator with Current Conveyors and Switching Diodes

    Directory of Open Access Journals (Sweden)

    Martin Janecek

    2012-12-01

    Full Text Available A novel relaxation oscillator based on integrating the diode-switched currents and Schmitt trigger is presented. It is derived from a known circuit with operational amplifiers where these active elements were replaced by current conveyors. The circuit employs only grounded resistances and capacitance and is suitable for high frequency square and triangular signal generation. Its frequency can be linearly and accurately controlled by voltage that is applied to a high-impedance input. Computer simulation with a model of a manufactured conveyor prototype verifies theoretic assumptions.

  8. Hybrid switch for resonant power converters

    Science.gov (United States)

    Lai, Jih-Sheng; Yu, Wensong

    2014-09-09

    A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

  9. Rotor position sensor switches currents in brushless dc motors

    Science.gov (United States)

    1965-01-01

    Reluctance switch incorporated in an induction motor is used for sensing rotor position and switching armature circuits in a brushless dc motor. This device drives the solar array system of an unmanned space satellite.

  10. Digital switched hydraulics

    Science.gov (United States)

    Pan, Min; Plummer, Andrew

    2018-06-01

    This paper reviews recent developments in digital switched hydraulics particularly the switched inertance hydraulic systems (SIHSs). The performance of SIHSs is presented in brief with a discussion of several possible configurations and control strategies. The soft switching technology and high-speed switching valve design techniques are discussed. Challenges and recommendations are given based on the current research achievements.

  11. Functional model of a high-current high-voltage superconducting switches

    International Nuclear Information System (INIS)

    Menke, Kh.; Shishov, Yu.A.

    1977-01-01

    Considered are problems of superconducting switches (SS) for energy extraction from magnets at a current of several kiloamperes and a voltage of several kilovolts with a time for transition to the normal state of <0.5 ms. SS is made of a wire of 0.5 mm diameter containing 19 strands of Nb-Ti alloy of 65 μm diameter. The wire matrix was etched out, 19 wires of 4.5 m length were braided together. On each of three groups of wires a heater wire of constantan of 0.12 mm diameter and 6 m length was wound. A second heater intended for slow heating during current feeding into the magnet, is wound over the braid. The wires and heaters are parallel connected and impregnated by an epoxy compound. The following main parameters were obtained in SS testing: critical current of 920 A, resistance in the normal state of 2.5 Ohm, and minimum delay time of 0.2 ms at a nominal current of 0.8 of the critical one

  12. Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO3 thin films with different compliance currents

    International Nuclear Information System (INIS)

    Tang, M H; Wang, Z P; Zeng, Z Q; Xu, X L; Wang, G Y; Zhang, L B; Xiao, Y G; Yang, S B; Jiang, B; Li, J C; He, J

    2011-01-01

    The SrTiO 3 (STO) thin films on a Pt/Ti/SiO 2 /Si substrate were synthesized using a sol–gel method to form a metal–insulator–metal structure. This device shows the bipolar resistance switching (BRS) behavior for a compliance current I cc of less than 0.1 mA but exhibits soft breakdown at a higher level of compliance current. A transition from the BRS behavior to the stable unipolar resistive switching behavior (URS) was also observed. We found that the BRS behavior may be controlled by the structure interface while the URS behavior is likely bulk controlled. Our study indicates that the external compliance current is a key factor in resistance switching phenomenon of STO thin films

  13. Switching current imbalance mitigation in power modules with parallel connected SiC MOSFETs

    DEFF Research Database (Denmark)

    Beczkowski, Szymon; Jørgensen, Asger Bjørn; Li, Helong

    2017-01-01

    Multichip power modules use parallel connected chips to achieve high current rating. Due to a finite flexibility in a DBC layout, some electrical asymmetries will occur in the module. Parallel connected transistors will exhibit uneven static and dynamic current sharing due to these asymmetries....... Especially important are the couplings between gate and power loops of individual transistors. Fast changing source currents cause gate voltage imbalances yielding uneven switching currents. Equalizing gate voltages seen by paralleled transistors, done by adjusting source bond wires, is proposed...... in this paper. Analysis is performed on an industry standard DBC layout using numerically extracted module parasitics. The method of tuning individual source inductances shows clear improvement in dynamic current balancing and prevents excessive current overshoot during transistors turn-on....

  14. Noise Analysis of Switched-Current Circuits

    DEFF Research Database (Denmark)

    Jørgensen, Ivan Harald Holger; Bogason, Gudmundur

    1998-01-01

    The understanding of noise in analog sampled data systems is vital for the design of high resolution circuitry. In this paper a general description of sampled and held noise is presented. The noise calculations are verified by measurements on an analog delay line implemented using switched...

  15. Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

    Science.gov (United States)

    Gu, Lei; Fu, Hua-Hua

    2015-12-01

    Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I-V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I-V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems.

  16. Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

    International Nuclear Information System (INIS)

    Gu, Lei; Fu, Hua-Hua

    2015-01-01

    Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I–V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I–V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems. (paper)

  17. Optically triggered high voltage switch network and method for switching a high voltage

    Science.gov (United States)

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  18. Optically triggered high voltage switch network and method for switching a high voltage

    Energy Technology Data Exchange (ETDEWEB)

    El-Sharkawi, Mohamed A. (Renton, WA); Andexler, George (Everett, WA); Silberkleit, Lee I. (Mountlake Terrace, WA)

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  19. Light-driven molecular current switch

    Czech Academy of Sciences Publication Activity Database

    Nešpůrek, Stanislav; Toman, Petr; Sworakowski, J.; Lipinski, J.

    2002-01-01

    Roč. 2, č. 4 (2002), s. 299-304 ISSN 1567-1739. [Multilateral Symposium between the Korean Academy of Science and Technology and the Foreign Academies. Seoul, 08.05.2002-10.05.2002] R&D Projects: GA AV ČR IAA1050901 Grant - others:GA-(PL) 4T09A 13222 Institutional research plan: CEZ:AV0Z4050913 Keywords : molecular switch * molecular electronics * charge transport Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.117, year: 2002

  20. Switched-capacitor isolated LED driver

    Science.gov (United States)

    Sanders, Seth R.; Kline, Mitchell

    2016-03-22

    A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

  1. Soft switching buck-boost converter for photovoltaic power generation; Taiyoko hatsuden no tame no soft switching shokoatsu converter

    Energy Technology Data Exchange (ETDEWEB)

    Lee, H. [Kyungnam University (Korea, Republic of)

    1996-10-27

    A soft switching method with small switching loss was proposed for the purpose of increasing the efficiency of a DC-DC boost converter which converted a DC current generated by solar cells to a variable DC current. Existing current converters are supplemented by using a snubber circuit around the switch so as to protect the switch by a hard switching action. However, with an increase of the output current, snubber loss is increased, reducing the efficiency. In order to solve this problem, the partial resonant switch method was applied to the converter; with this method of partially forming a resonant circuit only at the time of turning on/off of the switch, the switching loss was reduced through the soft switching, thereby making the proposed converter operate with high efficiency. Moreover, the resonant element of the partial resonant circuit using a snubber condenser, the energy accumulated in the condenser was regenerated on the power supply side without loss of snubber. With the regenerated energy, the proposed converter was provided with a smaller ratio of switching to use than the conventional converter. 4 refs., 7 figs., 1 tab.

  2. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.

    Science.gov (United States)

    Wang, Mengxing; Cai, Wenlong; Cao, Kaihua; Zhou, Jiaqi; Wrona, Jerzy; Peng, Shouzhong; Yang, Huaiwen; Wei, Jiaqi; Kang, Wang; Zhang, Youguang; Langer, Jürgen; Ocker, Berthold; Fert, Albert; Zhao, Weisheng

    2018-02-14

    Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm 2 , which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm -2 for devices with a 45-nm radius.

  3. Energy losses in switches

    International Nuclear Information System (INIS)

    Martin, T.H.; Seamen, J.F.; Jobe, D.O.

    1993-01-01

    The authors experiments show energy losses between 2 and 10 times that of the resistive time predictions. The experiments used hydrogen, helium, air, nitrogen, SF 6 polyethylene, and water for the switching dielectric. Previously underestimated switch losses have caused over predicting the accelerator outputs. Accurate estimation of these losses is now necessary for new high-efficiency pulsed power devices where the switching losses constitute the major portion of the total energy loss. They found that the switch energy losses scale as (V peak I peak ) 1.1846 . When using this scaling, the energy losses in any of the tested dielectrics are almost the same. This relationship is valid for several orders of magnitude and suggested a theoretical basis for these results. Currents up to .65 MA, with voltages to 3 MV were applied to various gaps during these experiments. The authors data and the developed theory indicates that the switch power loss continues for a much longer time than the resistive time, with peak power loss generally occurring at peak current in a ranging discharge instead of the early current time. All of the experiments were circuit code modeled after developing a new switch loss version based on the theory. The circuit code predicts switch energy loss and peak currents as a function of time. During analysis of the data they noticed slight constant offsets between the theory and data that depended on the dielectric. They modified the plasma conductivity for each tested dielectric to lessen this offset

  4. Three-Phase High-Power and Zero-Current-Switching OBC for Plug-In Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Cheng-Shan Wang

    2015-06-01

    Full Text Available In this paper, an interleaved high-power zero-current-switching (ZCS onboard charger (OBC based on the three-phase single-switch buck rectifier is proposed for application to plug-in electric vehicles (EVs. The multi-resonant structure is used to achieve high efficiency and high power density, which are necessary to reduce the volume and weight of the OBC. This study focuses on the border conditions of ZCS converting with a battery load, which means the variation ranges of the output voltage and current are very large. Furthermore, a novel hybrid control method combining pulse frequency modulation (PFM and pulse width modulation (PWM together is presented to ensure a driving frequency higher than 10 kHz, and this will reduce the unexpected inner resonant power flow and decrease the total harmonic distortion (THD of the input current under a light load at the end of the charging process. Finally, a prototype is established, and experiments are carried out. According to the experimental results, the conversion efficiency is higher than 93.5%, the THD about 4.3% and power factor (PF 0.98 under the maximum power output condition. Besides, a three-stage charging process is also carried out the experimental platform.

  5. Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric

    Science.gov (United States)

    Singh, Subhash; Mohapatra, Y. N.

    2017-06-01

    We have investigated switch-on drain-source current transients in fully solution-processed thin film transistors based on 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) using cross-linked poly-4-vinylphenol as a dielectric. We show that the nature of the transient (increasing or decreasing) depends on both the temperature and the amplitude of the switching pulse at the gate. The isothermal transients are analyzed spectroscopically in a time domain to extract the degree of non-exponentiality and its possible origin in trap kinetics. We propose a phenomenological model in which the exchange of electrons between interfacial ions and traps controls the nature of the drain current transients dictated by the Fermi level position. The origin of interfacial ions is attributed to the essential fabrication step of UV-ozone treatment of the dielectric prior to semiconductor deposition.

  6. Spin Current Switching and Spin-Filtering Effects in Mn-Doped Boron Nitride Nanoribbons

    Directory of Open Access Journals (Sweden)

    G. A. Nemnes

    2012-01-01

    Full Text Available The spin transport properties are investigated by means of the first principle approach for boron nitride nanoribbons with one or two substitutional Mn impurities, connected to graphene electrodes. The spin current polarization is evaluated using the nonequilibrium Green’s function formalism for each structure and bias. The structure with one Mn impurity reveals a transfer characteristics suitable for a spin current switch. In the case of two Mn impurities, the system behaves as an efficient spin-filter device, independent on the ferromagnetic or antiferromagnetic configurations of the magnetic impurities. The experimental availability of the building blocks as well as the magnitudes of the obtained spin current polarizations indicates a strong potential of the analyzed structures for future spintronic devices.

  7. Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

    Science.gov (United States)

    Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghun

    2018-06-01

    Atomic switches are considered to be building blocks for future non-volatile data storage and internet of things. However, obtaining device structures capable of ultrahigh density data storage, high endurance, and long data retention, and more importantly, understanding the switching mechanisms are still a challenge for atomic switches. Here, we achieved improved resistive switching performance in a bilayer structure containing aluminum oxide, with an oxygen-deficient oxide as the top switching layer and stoichiometric oxide as the bottom switching layer, using atomic layer deposition. This bilayer device showed a high on/off ratio (105) with better endurance (∼2000 cycles) and longer data retention (104 s) than single-oxide layers. In addition, depending on the compliance current, the bilayer device could be operated in four different resistance states. Furthermore, the depth profiles of the hourglass-shaped conductive filament of the bilayer device was observed by conductive atomic force microscopy.

  8. Modeling, Simulation, and Experiment of Switched Reluctance Ocean Current Generator System

    Directory of Open Access Journals (Sweden)

    Hao Chen

    2013-01-01

    Full Text Available This paper presents nonlinear simulation model of switched reluctance (SR ocean current generator system on MATLAB/SIMULINK with describing the structure of generator system. The developed model is made up of main model, rotor position calculation module, controller module, gate module, power converter module, phase windings module, flux-linkage module, torque module, and power calculation module. The magnetization curves obtained by two-dimensional finite-element electromagnetic field calculation and the conjugated magnetic energy graphics obtained from the three-dimensional graphics of flux linkage are stored in the “Lookup Table” modules on MATLAB/SIMULINK. The hardware of the developed three-phase 12/8 structure SR ocean current generator system prototype with the experimental platform is presented. The simulation of the prototype is performed by the developed models, and the experiments have been carried out under the same condition with different output power, turn-off angle, and rotor speed. The simulated phase current waveforms agree well with the tested phase current waveforms experimentally. The simulated output voltage curves agree well with the tested output voltage curves experimentally. It is shown that the developed nonlinear simulation model of the three-phase 12/8 structure SR ocean current generator system is valid.

  9. The Transistor as Low Level Switch

    Energy Technology Data Exchange (ETDEWEB)

    Lyden, Anders

    1963-10-15

    The common collector transistor switch has in the on state with open emitter a certain offset voltage U{sub EK} {approx_equal} -kT/qB{sub N}. This expression is derived in a new, more physical way. It is further shown at which emitter current the current amplification factor B{sub N} should be measured to get a correct value for the above expression. The collector current I at zero collector voltage I{sub K} = I{sub 0}(exp(qU{sub E}/kT) - 1) extremely well. Substitution of I{sub EBO} and I{sub KBO} by I{sub 0} in Eber's and Moll's relations consequently improves these equations and the characteristics of the transistor switch can be better determined. At switching on and off transients appear across the switch. The influence of the 'spike' at switching off can be described by an current I{sub SPIKE} which is easy to calculate. I{sub SPIKE} is approximately dependent only on the base - emitter depletion layer capacitance and the chopper frequency f{sub 0}. Some compensated switches have lower drift than the drift in U{sub EK}. They may, for example, have a temperature drift < 0.2 {mu}V/deg C and a long time drift < 2 {mu}V/week. Some compensated switches also have I{sub SPIKE} < 10{sup -12} f{sub 0}A. The static offset current in the off state can easily be made < 10{sup -12} A.

  10. A CW Gunn diode bistable switching element.

    Science.gov (United States)

    Hurtado, M.; Rosenbaum, F. J.

    1972-01-01

    Experiments with a current-controlled bistable switching element using a CW Gunn diode are reported. Switching rates of the order of 10 MHz have been obtained. Switching is initiated by current pulses of short duration (5-10 ns). Rise times of the order of several nanoseconds could be obtained.

  11. In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance

    International Nuclear Information System (INIS)

    Wu, Di; Yu, Guoqiang; Shao, Qiming; Li, Xiang; Wong, Kin L.; Wang, Kang L.; Wu, Hao; Han, Xiufeng; Zhang, Zongzhi; Khalili Amiri, Pedram

    2016-01-01

    We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co_4_0Fe_4_0B_2_0 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.

  12. Dynamics of a gain-switched distributed feedback ridge waveguide laser in nanoseconds time scale under very high current injection conditions.

    Science.gov (United States)

    Klehr, A; Wenzel, H; Brox, O; Schwertfeger, S; Staske, R; Erbert, G

    2013-02-11

    We present detailed experimental investigations of the temporal, spectral and spatial behavior of a gain-switched distributed feedback (DFB) laser emitting at a wavelength of 1064 nm. Gain-switching is achieved by injecting nearly rectangular shaped current pulses having a length of 50 ns and a very high amplitude up to 2.5 A. The repetition frequency is 200 kHz. The laser has a ridge waveguide (RW) for lateral waveguiding with a ridge width of 3 µm and a cavity length of 1.5 mm. Time resolved investigations show, depending on the amplitude of the current pulses, that the optical power exhibits different types of oscillatory behavior during the pulses, accompanied by changes in the lateral near field intensity profiles and optical spectra. Three different types of instabilities can be distinguished: mode beating with frequencies between 25 GHz and 30 GHz, switching between different lateral intensity profiles with a frequency of 0.4 GHz and self-sustained oscillations with a frequency of 4 GHz. The investigations are of great relevance for the utilization of gain-switched DFB-RW lasers as seed lasers for fiber laser systems and in other applications, which require a high optical power.

  13. A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays.

    Science.gov (United States)

    Park, Woo Young; Kim, Gun Hwan; Seok, Jun Yeong; Kim, Kyung Min; Song, Seul Ji; Lee, Min Hwan; Hwang, Cheol Seong

    2010-05-14

    This study examined the properties of Schottky-type diodes composed of Pt/TiO(2)/Ti, where the Pt/TiO(2) and TiO(2)/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of approximately 10(9) was achieved at 1 V when the TiO(2) film thickness was 19 nm. TiO(2) film was grown by atomic layer deposition at a substrate temperature of 250 degrees C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to current measurement showed a local forward current density as high as approximately 10(5) A cm(-2). Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.

  14. Clinical significance of combined detection of multiple serum antibodies (AsAb, EmAb, AcAb, AoAb, ToxAb) in infertile women

    International Nuclear Information System (INIS)

    Chen Jing; Jiang Li; Lu Ya

    2005-01-01

    Objective: To determine the clinical significance of combined detection of multiple serum antibodies in infertile women. Methods; Serum multiple antibodies were examined in 120 infertile women, including 88 failed to get pregnancy and 32 with repeated spontaneous abortion. The antibodies tested were: (1) anti-sperm antibody (AsAb) (2) endometrial antibody (EmAb) (3) anti-cardiophospholipid antibody (AcAb) (4) Anti-ovarian antibody (AoAb) and Toxoplasmosis antibody (ToxAb). Results: In 48 of the infertile women, none of the five antibodies were positive (40% of 120). The rest were: one antibody positive--38/120 or 31.6%; two antibodies positive--31/120 or 25.83%, three and four antibodies positive--4/120 or 3.33%. None of the women were positive with all five antibodies. Conclusion: Immune factor was the chief cause of infertility in women. (authors)

  15. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

    2012-01-20

    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  16. Optimization and Design of a Low Power Switched Current A/D Sigma-Delta-Modulator for Voice Band Applications

    DEFF Research Database (Denmark)

    Jørgensen, Ivan Harald Holger; Bogason, Gudmundur

    1998-01-01

    This paper presents a third order switched current sigma delta-modulator. The modulator is optimized at the system level for minimum power consumption by careful design of the noise transfer function. A thorough noise analysis of the cascode type current copiers used to implement the modulator......, together with a new methodology for evaluating the nonlinear settling behavior is presented. This leads to a new optimization methodology that minimize the power consumption in switched current circuits for given design parameters. The optimization methodology takes process variations into account....... The modulator is implemented in a standard 2.4 mu m CMOS process only using MOS capacitors. For a power supply of 3.3 V the power consumption is approximately 2.5 mW when operating at a sampling rate of 600 kHz. Under these condition the peak SNR it measured to 74.5 dB with a signal band width of 5.5 kHz. Due...

  17. Current-Induced Switching of a Single-Molecule Magnet with Arbitrary Oriented Easy Axis

    OpenAIRE

    Misiorny, Maciej; Barnas, Józef

    2007-01-01

    The main objective of this work is to investigate theoretically how tilting of an easy axis of a single-molecule magnet (SMM) from the orientation collinear with magnetic moments of the leads affects the switching process induced by current flowing through the system. To do this we consider a model system that consists of a SMM embedded in the nonmagnetic barrier of a magnetic tunnel junction. The anisotropy axis of the SMM forms an arbitrary angle with magnetic moments of the leads (the latt...

  18. DESAIN DAN IMPLEMENTSI SOFT SWITCHING BOOST KONVERTER DENGAN SIMPLE AUXILLARY RESONANT SWITCH (SARC

    Directory of Open Access Journals (Sweden)

    Dimas Bagus Saputra

    2017-01-01

    Full Text Available Boost konverter merupakan penaik tegangan DC ke tegangan DC yang mempunyai tegangan output yang lebih tinggi dibanding inputnya. Penggunaan boost konverter diera modern semakin meningkat dan dibuat dengan dimensi yang lebih kecil, berat yang lebih ringan dan efisiensi yang lebih tinggi dibanding dengan boost konverter generasi terdahulu. Tetapi rugi-rugi periodik saat on/off meningkat. Untuk meraih kriteria tersebut, teknik hard switching boost konverter berevolusi menjadi teknik soft switching dengan menambah rangkaian simple auxiliary resonant circuit (SARC. Karena penambahan rangkaian SARC tersebut konverter bekerja pada kondisi zero-voltage switching switch (ZVS dan zero current switch (ZCS, sehingga saklar semikonduktor tidak bekerja secara hard switching lagi. Pada penelitian ini akan di desain dan diimplementaskan soft switching boost konverter dengan SARC. Kelebihan dari soft switching boost konverter dengan SARC adalah mempunyai efisiensi yang lebih tinggi dibanding dengan boost konverter konventional. Dari hasil implementasi menunjukkan konverter yang diajukan telah meraih zero voltage switch (ZVS. Sehingga boost konverter zero voltage switch (ZVS bisa diaplikasikan pada sistem power suplay yang membutuhkan efisiensi energi yang tinggi terutama pada daya yang tinggi.

  19. Ab initio molecular dynamics: basic concepts, current trends and novel applications

    International Nuclear Information System (INIS)

    Tuckerman, Mark E

    2002-01-01

    The field of ab initio molecular dynamics (AIMD), in which finite temperature molecular dynamics (MD) trajectories are generated with forces obtained from accurate 'on the fly' electronic structure calculations, is a rapidly evolving and growing technology that allows chemical processes in condensed phases to be studied in an accurate and unbiased way. This article is intended to present the basics of the AIMD method as well as to provide a broad survey of the state of the art of the field and showcase some of its capabilities. Beginning with a derivation of the method from the Born-Oppenheimer approximation, issues including the density functional representation of electronic structure, basis sets, calculation of observables and the Car-Parrinello extended Lagrangian algorithm are discussed. A number of example applications, including liquid structure and dynamics and aqueous proton transport, are presented in order to highlight some of the current capabilities of the approach. Finally, advanced topics such as inclusion of nuclear quantum effects, excited states and scaling issues are addressed. (topical review)

  20. EDITORIAL: Molecular switches at surfaces Molecular switches at surfaces

    Science.gov (United States)

    Weinelt, Martin; von Oppen, Felix

    2012-10-01

    In nature, molecules exploit interaction with their environment to realize complex functionalities on the nanometer length scale. Physical, chemical and/or biological specificity is frequently achieved by the switching of molecules between microscopically different states. Paradigmatic examples are the energy production in proton pumps of bacteria or the signal conversion in human vision, which rely on switching molecules between different configurations or conformations by external stimuli. The remarkable reproducibility and unparalleled fatigue resistance of these natural processes makes it highly desirable to emulate nature and develop artificial systems with molecular functionalities. A promising avenue towards this goal is to anchor the molecular switches at surfaces, offering new pathways to control their functional properties, to apply electrical contacts, or to integrate switches into larger systems. Anchoring at surfaces allows one to access the full range from individual molecular switches to self-assembled monolayers of well-defined geometry and to customize the coupling between molecules and substrate or between adsorbed molecules. Progress in this field requires both synthesis and preparation of appropriate molecular systems and control over suitable external stimuli, such as light, heat, or electrical currents. To optimize switching and generate function, it is essential to unravel the geometric structure, the electronic properties and the dynamic interactions of the molecular switches on surfaces. This special section, Molecular Switches at Surfaces, collects 17 contributions describing different aspects of this research field. They analyze elementary processes, both in single molecules and in ensembles of molecules, which involve molecular switching and concomitant changes of optical, electronic, or magnetic properties. Two topical reviews summarize the current status, including both challenges and achievements in the field of molecular switches on

  1. Interface-Enhanced Spin-Orbit Torques and Current-Induced Magnetization Switching of Pd /Co /AlOx Layers

    Science.gov (United States)

    Ghosh, Abhijit; Garello, Kevin; Avci, Can Onur; Gabureac, Mihai; Gambardella, Pietro

    2017-01-01

    Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to developing electrically controlled memory and logic devices. Here, we report on vector measurements of the current-induced spin-orbit torques and magnetization switching in perpendicularly magnetized Pd /Co /AlOx layers as a function of Pd thickness. We find sizable dampinglike (DL) and fieldlike (FL) torques, on the order of 1 mT per 107 A /cm2 , which have different thicknesses and magnetization angle dependencies. The analysis of the DL torque efficiency per unit current density and the electric field using drift-diffusion theory leads to an effective spin Hall angle and spin-diffusion length of Pd larger than 0.03 and 7 nm, respectively. The FL spin-orbit torque includes a significant interface contribution, is larger than estimated using drift-diffusion parameters, and, furthermore, is strongly enhanced upon rotation of the magnetization from the out-of-plane to the in-plane direction. Finally, taking advantage of the large spin-orbit torques in this system, we demonstrate bipolar magnetization switching of Pd /Co /AlOx layers with a similar current density to that used for Pt /Co layers with a comparable perpendicular magnetic anisotropy.

  2. Ferroelectric switching of band alignments in LSMO/PZT/Co multiferroic tunnel junctions: an ab initio study.

    Science.gov (United States)

    Imam, M; Stojić, N; Binggeli, N

    2017-08-04

    Band alignments in ferroelectric tunnel junctions (FTJs) are expected to play a critical role in determining the charge transport across the tunneling barrier. In general, however, the interface band discontinuities and their polarization dependence are not well known in these systems. Using a first-principles density-functional-theory approach, we explore the ferroelectric (FE) polarization dependence of the band alignments in [Formula: see text] (LSMO/PZT/Co) multiferroic tunnel junctions, for which recent experiments indicated an ON/OFF conductivity behavior upon switching the PZT FE polarization. Our results on the pseudomorphic defect-free LSMO/PZT/Co FTJs evidence a major FE switching effect on the band discontinuities at both interfaces. Based on the changes in the band alignments, we provide a possible explanation for the observed trends in the resistive switching.

  3. DC switching regulated power supply for driving an inductive load

    Science.gov (United States)

    Dyer, George R.

    1986-01-01

    A power supply for driving an inductive load current from a dc power supply hrough a regulator circuit including a bridge arrangement of diodes and switching transistors controlled by a servo controller which regulates switching in response to the load current to maintain a selected load current. First and second opposite legs of the bridge are formed by first and second parallel-connected transistor arrays, respectively, while the third and fourth legs of the bridge are formed by appropriately connected first and second parallel connected diode arrays, respectively. The regulator may be operated in three "stages" or modes: (1) For current runup in the load, both first and second transistor switch arrays are turned "on" and current is supplied to the load through both transistor arrays. (2) When load current reaches the desired level, the first switch is turned "off", and load current "flywheels" through the second switch array and the fourth leg diode array connecting the second switch array in series with the load. Current is maintained by alternating between modes 1 and 2 at a suitable duty cycle and switching rate set by the controller. (3) Rapid current rundown is accomplished by turning both switch arrays "off", allowing load current to be dumped back into the source through the third and fourth diode arrays connecting the source in series opposition with the load to recover energy from the inductive load. The three operating states are controlled automatically by the controller.

  4. An In-Rush Current Suppression Technique for the Solid-State Transfer Switch System

    Science.gov (United States)

    Cheng, Po-Tai; Chen, Yu-Hsing

    More and more utility companies provide dual power feeders as a premier service of high power quality and reliability. To take advantage of this, the solid-state transfer switch (STS) is adopted to protect the sensitive load against the voltage sag. However, the fast transfer process may cause in-rush current on the load-side transformer due to the resulting DC-offset in its magnetic flux as the load-transfer is completed. The in-rush current can reach 2∼6 p.u. and it may trigger the over-current protections on the power feeder. This paper develops a flux estimation scheme and a thyristor gating scheme based on the impulse commutation bridge STS (ICBSTS) to minimize the DC-offset on the magnetic flux. By sensing the line voltages of both feeders, the flux estimator can predict the peak transient flux linkage at the moment of load-transfer and evaluate a suitable moment for the transfer to minimize the in-rush current. Laboratory test results are presented to validate the performance of the proposed system.

  5. A magnetically switched kicker for proton extraction

    International Nuclear Information System (INIS)

    Dinkel, J.; Biggs, J.

    1989-03-01

    The application of magnetic current amplification and switching techniques to the generation of precise high current pulses for switching magnets is described. The square loop characteristic of Metglas tape wound cores at high excitation levels provides excellent switching characteristics for microsecond pulses. The rugged and passive nature of this type pulser makes it possible to locate the final stages of amplification at the load for maximum efficiency. 12 refs., 8 figs

  6. High-power semiconductor RSD-based switch

    Energy Technology Data Exchange (ETDEWEB)

    Bezuglov, V G; Galakhov, I V; Grusin, I A [All-Russian Scientific Research Inst. of Experimental Physics, Sarov (Russian Federation); and others

    1997-12-31

    The operating principle and test results of a high-power semiconductor RSD-based switch with the following operating parameters is described: operating voltage 25 kV, peak operating current 200 kA, maximum transferred charge 70 C. The switch is intended for use by high-power capacitor banks of state-of-the-art research facilities. The switch was evaluated for applicability in commercial pulsed systems. The possibility of increasing the peak operating current to 500 kA is demonstrated. (author). 4 figs., 2 refs.

  7. The Atlas load protection switch

    CERN Document Server

    Davis, H A; Dorr, G; Martínez, M; Gribble, R F; Nielsen, K E; Pierce, D; Parsons, W M

    1999-01-01

    Atlas is a high-energy pulsed-power facility under development to study materials properties and hydrodynamics experiments under extreme conditions. Atlas will implode heavy liner loads (m~45 gm) with a peak current of 27-32 MA delivered in 4 mu s, and is energized by 96, 240 kV Marx generators storing a total of 23 MJ. A key design requirement for Atlas is obtaining useful data for 95601130f all loads installed on the machine. Materials response calculations show current from a prefire can damage the load requiring expensive and time consuming replacement. Therefore, we have incorporated a set of fast-acting mechanical switches in the Atlas design to reduce the probability of a prefire damaging the load. These switches, referred to as the load protection switches, short the load through a very low inductance path during system charge. Once the capacitors have reached full charge, the switches open on a time scale short compared to the bank charge time, allowing current to flow to the load when the trigger pu...

  8. Novel magnetic wire fabrication process by way of nanoimprint lithography for current induced magnetization switching

    Science.gov (United States)

    Asari, Tsukasa; Shibata, Ryosuke; Awano, Hiroyuki

    2017-05-01

    Nanoimprint lithography (NIL) is an effective method to fabricate nanowire because it does not need expensive systems and this process is easier than conventional processes. In this letter, we report the Current Induced Magnetization Switching (CIMS) in perpendicularly magnetized Tb-Co alloy nanowire fabricated by NIL. The CIMS in Tb-Co alloy wire was observed by using current pulse under in-plane external magnetic field (HL). We successfully observed the CIMS in Tb-Co wire fabricated by NIL. Additionally, we found that the critical current density (Jc) for the CIMS in the Tb-Co wire fabricated by NIL is 4 times smaller than that fabricated by conventional lift-off process under HL = 200Oe. These results indicate that the NIL is effective method for the CIMS.

  9. Complementary resistive switching in BaTiO{sub 3}/NiO bilayer with opposite switching polarities

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuo [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Institut d’Electronique de Micro-électronique et de Nanotechnologie (IEMN), CNRS, Université des Sciences et Technologies de Lille, avenue Poincaré, BP 60069, 59652, Villeneuve d’Ascq cedex (France); Wei, Xianhua, E-mail: weixianhua@swust.edu.cn [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Lei, Yao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yuan, Xincai [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Zeng, Huizhong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054 (China)

    2016-12-15

    Graphical abstract: Au/BaTiO{sub 3}/NiO/Pt bilayer device shows complementary resistive switching (CRS) without electroforming which is mainly ascribed to anti-serial stack of two RRAM cells with bipolar behaviors. - Highlights: • Complementary resistive switching (CRS) has been investigated in Au/BaTiO{sub 3}/NiO/Pt by stacking the two elements with different switching types. • The realization of complementary resistive switching (CRS) is mainly ascribed to the anti-serial stack of two RRAM cells with bipolar behaviors. • Complementary resistive switching (CRS) in bilayer is effective to solve the sneak current problem briefly and economically. - Abstract: Resistive switching behaviors have been investigated in the Au/BaTiO{sub 3}/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO{sub 3} thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I–V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO{sub 3} and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

  10. Switching phenomena in high-voltage circuit breakers

    International Nuclear Information System (INIS)

    Nakanishi, K.

    1991-01-01

    The topics covered in this book include: general problems concerning current interruption, the physical arc model, and miscellaneous types of modern switching apparatus, such as gas circuit breakers, gas-insulated switch-gear, vacuum circuit breakers and high-voltage direct-current circuit breakers

  11. Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator

    International Nuclear Information System (INIS)

    Roy, Urmimala; Dey, Rik; Pramanik, Tanmoy; Ghosh, Bahniman; Register, Leonard F.; Banerjee, Sanjay K.

    2015-01-01

    We consider a thermally stable, metallic nanoscale ferromagnet (FM) subject to spin-polarized current injection and exchange coupling from the spin-helically locked surface states of a topological insulator (TI) to evaluate possible non-volatile memory applications. We consider parallel transport in the TI and the metallic FM, and focus on the efficiency of magnetization switching as a function of transport between the TI and the FM. Transport is modeled as diffusive in the TI beneath the FM, consistent with the mobility in the TI at room temperature, and in the FM, which essentially serves as a constant potential region albeit spin-dependent except in the low conductivity, diffusive limit. Thus, it can be captured by drift-diffusion simulation, which allows for ready interpretation of the results. We calculate switching time and energy consumed per write operation using self-consistent transport, spin-transfer-torque (STT), and magnetization dynamics calculations. Calculated switching energies and times compare favorably to conventional spin-torque memory schemes for substantial interlayer conductivity. Nevertheless, we find that shunting of current from the TI to a metallic nanomagnet can substantially limit efficiency. Exacerbating the problem, STT from the TI effectively increases the TI resistivity. We show that for optimum performance, the sheet resistivity of the FM layer should be comparable to or larger than that of the TI surface layer. Thus, the effective conductivity of the FM layer becomes a critical design consideration for TI-based non-volatile memory

  12. Inherent stochasticity of superconductor-resistor switching behavior in nanowires.

    Science.gov (United States)

    Shah, Nayana; Pekker, David; Goldbart, Paul M

    2008-11-14

    We study the stochastic dynamics of superconductive-resistive switching in hysteretic current-biased superconducting nanowires undergoing phase-slip fluctuations. We evaluate the mean switching time using the master-equation formalism, and hence obtain the distribution of switching currents. We find that as the temperature is reduced this distribution initially broadens; only at lower temperatures does it show the narrowing with cooling naively expected for phase slips that are thermally activated. We also find that although several phase-slip events are generally necessary to induce switching, there is an experimentally accessible regime of temperatures and currents for which just one single phase-slip event is sufficient to induce switching, via the local heating it causes.

  13. Current pulse shaping of the load current on PTS

    Directory of Open Access Journals (Sweden)

    Minghe Xia

    2016-02-01

    Full Text Available The typical rise time of PTS machine is ∼110 ns with about 10 MA peak current under short pulse mode when all 24 modules discharge simultaneously. By distributing the trigger times of 12 laser beams logically and adjusting the statues of the pulse output switches, longer rise-time pulse can be obtained on the PTS facility. Based on the required pulse shape, whole circuit simulations will be used to calculate the trigger times of each laser triggering gas switch and the status of the pulse output switches. The rise time of the current is determined by the time difference between the first and last trigged laser triggering gas switches. In order to trigger the laser triggering gas switch, sufficient laser power is needed to be sent into the gap of the gas switches. The gas pressure and voltage difference on the two electrodes of the gas switches also affect the triggering of the gas switches, and the voltage added on the gas switch is determined by its transition time. Traditionally the trigger time difference should be less than the transition time of the two neighboring modules. A new simulation model of PTS shows one can break this transition time limits. Series of current pulse shaping experiments have been investigated on the PTS (Primary Test Stand. As results, more than 5 MA peak current were successfully achieved on the load with a rise time of 600 ns. This study and experiments of the pulse shaping on PTS demonstrate the adaptable ability of the PTS for offering different waveform of mega ampere current pulse for different research purpose.

  14. Zero-Voltage Switching PWM Strategy Based Capacitor Current-Balancing Control for Half-Bridge Three-Level DC/DC Converter

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Zhang, Qi

    2018-01-01

    The current imbalance among the two input capacitors is one of the important issues of the half-bridge threelevel (HBTL) DC/DC converter, which would affect system performance and reliability. In this paper, a zero-voltage switching (ZVS) pulse-wide modulation (PWM) strategy including two operation...

  15. Radio frequency-assisted fast superconducting switch

    Science.gov (United States)

    Solovyov, Vyacheslav; Li, Qiang

    2017-12-05

    A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET may be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.

  16. IGBT Dynamic Loss Reduction through Device Level Soft Switching

    Directory of Open Access Journals (Sweden)

    Lan Ma

    2018-05-01

    Full Text Available Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT is widely used in high power applications. However, its switching frequency is generally low because of relatively large switching losses. Silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET is much more superior due to their fast switching speed, which is determined by the internal parasitic capacitance instead of the stored charges, like the IGBT. By the combination of SiC MOSFET and Si IGBT, this paper presents a novel series hybrid switching method to achieve IGBT’s dynamic switching loss reduction by switching under Zero Voltage Hard Current (ZVHC turn-on and Zero Current Hard Voltage (ZCHV turn-off conditions. Both simulation and experimental results of IGBT are carried out, which shows that the soft switching of IGBT has been achieved both in turn-on and turn-off period. Thus 90% turn-on loss and 57% turn-off loss are reduced. Two different IGBTs’ test results are also provided to study the modulation parameter’s effect on the turn-off switching loss. Furthermore, with the consideration of voltage and current transient states, a new soft switching classification is proposed. At last, another improved modulation and Highly Efficient and Reliable Inverter Concept (HERIC inverter are given to validate the effectiveness of the device level hybrid soft switching method application.

  17. The gradual nature of threshold switching

    International Nuclear Information System (INIS)

    Wimmer, M; Salinga, M

    2014-01-01

    The recent commercialization of electronic memories based on phase change materials proved the usability of this peculiar family of materials for application purposes. More advanced data storage and computing concepts, however, demand a deeper understanding especially of the electrical properties of the amorphous phase and the switching behaviour. In this work, we investigate the temporal evolution of the current through the amorphous state of the prototypical phase change material, Ge 2 Sb 2 Te 5 , under constant voltage. A custom-made electrical tester allows the measurement of delay times over five orders of magnitude, as well as the transient states of electrical excitation prior to the actual threshold switching. We recognize a continuous current increase over time prior to the actual threshold-switching event to be a good measure for the electrical excitation. A clear correlation between a significant rise in pre-switching-current and the later occurrence of threshold switching can be observed. This way, we found experimental evidence for the existence of an absolute minimum for the threshold voltage (or electric field respectively) holding also for time scales far beyond the measurement range. (paper)

  18. High-explosive driven crowbar switch

    International Nuclear Information System (INIS)

    Dike, R.S.; Kewish, R.W. Jr.

    1976-01-01

    The disclosure relates to a compact explosive driven switch for use as a low resistance, low inductance crowbar switch. A high-explosive charge extrudes a deformable conductive metallic plate through a polyethylene insulating layer to achieve a hard current contact with a supportive annular conductor

  19. Novel magnetic wire fabrication process by way of nanoimprint lithography for current induced magnetization switching

    Directory of Open Access Journals (Sweden)

    Tsukasa Asari

    2017-05-01

    Full Text Available Nanoimprint lithography (NIL is an effective method to fabricate nanowire because it does not need expensive systems and this process is easier than conventional processes. In this letter, we report the Current Induced Magnetization Switching (CIMS in perpendicularly magnetized Tb-Co alloy nanowire fabricated by NIL. The CIMS in Tb-Co alloy wire was observed by using current pulse under in-plane external magnetic field (HL. We successfully observed the CIMS in Tb-Co wire fabricated by NIL. Additionally, we found that the critical current density (Jc for the CIMS in the Tb-Co wire fabricated by NIL is 4 times smaller than that fabricated by conventional lift-off process under HL = 200Oe. These results indicate that the NIL is effective method for the CIMS.

  20. A new amplifier for improving piezoelectric actuator linearity based on current switching in precision positioning

    International Nuclear Information System (INIS)

    Ru, Changhai; Chen, Liguo; Shao, Bing; Rong, Weibin; Sun, Lining

    2008-01-01

    Piezoelectric actuators have traditionally been driven by voltage amplifiers. When driven at large voltages these actuators exhibit a significant amount of distortion, known as hysteresis, which may reduce the stability robustness of the system in feedback control applications. Piezoelectric transducers are known to exhibit less hysteresis when driven with current or charge rather than voltage. Despite this advantage, such methods have found little practical application due to the poor low frequency response of present current and charge driver designs. In this paper, a new piezoelectric amplifier based on current switching is presented which can reduce hysteresis. Special circuits and a hybrid control algorithm realize quick and precise positioning. Experimental results demonstrate that the amplifier can be used for dynamic and static applications and low frequency bandwidths can also be achieved

  1. Analysis of current-bidirectional buck-boost based switch-mode audio amplifier

    DEFF Research Database (Denmark)

    Bolten Maizonave, Gert; Andersen, Michael A. E.; Kjærgaard, Claus

    2011-01-01

    The following studdy was carried out in order to assses quantitatively the performannce of the buck--boost converter whhen used as swiitch-mode audio amplifier. It comprises of, to beggin with, the de limitation of design criteria bassed on the state of-the-art solution, which is based...... in a differential mode buckbased amplifier with a boost converter as power supply. The averaged switch modelling of the differential mode current bidirectional topology is also used, in order to analyze the steady state and frequency-wise behaviour of this converter and parameterize it to meet the design criteria....... Next, several piecewise-linear siimulation resultss are shown with detail enough to emphasize the features of the converter. A simple prototype is implemented to verify the main predicted features. Presently no previous publicat ion could be found containing a thorough analysis of this topology...

  2. High voltage superconducting switch for power application

    International Nuclear Information System (INIS)

    Mawardi, O.; Ferendeci, A.; Gattozzi, A.

    1983-01-01

    This paper reports the development of a novel interrupter which meets the requirements of a high voltage direct current (HVDC) power switch and at the same time doubles as a current limiter. The basic concept of the interrupter makes use of a fast superconducting, high capacity (SHIC) switch that carries the full load current while in the superconducting state and reverts to the normal resistive state when triggered. Typical design parameters are examined for the case of a HVDC transmission line handling 2.5KA at 150KVDC. The result is a power switch with superior performance and smaller size than the ones reported to date

  3. Five ab initio potential energy and dipole moment surfaces for hydrated NaCl and NaF. I. Two-body interactions

    International Nuclear Information System (INIS)

    Wang, Yimin; Bowman, Joel M.; Kamarchik, Eugene

    2016-01-01

    We report full-dimensional, ab initio-based potentials and dipole moment surfaces for NaCl, NaF, Na + H 2 O, F − H 2 O, and Cl − H 2 O. The NaCl and NaF potentials are diabatic ones that dissociate to ions. These are obtained using spline fits to CCSD(T)/aug-cc-pV5Z energies. In addition, non-linear least square fits using the Born-Mayer-Huggins potential are presented, providing accurate parameters based strictly on the current ab initio energies. The long-range behavior of the NaCl and NaF potentials is shown to go, as expected, accurately to the point-charge Coulomb interaction. The three ion-H 2 O potentials are permutationally invariant fits to roughly 20 000 coupled cluster CCSD(T) energies (awCVTZ basis for Na + and aVTZ basis for Cl − and F − ), over a large range of distances and H 2 O intramolecular configurations. These potentials are switched accurately in the long range to the analytical ion-dipole interactions, to improve computational efficiency. Dipole moment surfaces are fits to MP2 data; for the ion-ion cases, these are well described in the intermediate- and long-range by the simple point-charge expression. The performance of these new fits is examined by direct comparison to additional ab initio energies and dipole moments along various cuts. Equilibrium structures, harmonic frequencies, and electronic dissociation energies are also reported and compared to direct ab initio results. These indicate the high fidelity of the new PESs.

  4. MOSFET Switching Circuit Protects Shape Memory Alloy Actuators

    Science.gov (United States)

    Gummin, Mark A.

    2011-01-01

    A small-footprint, full surface-mount-component printed circuit board employs MOSFET (metal-oxide-semiconductor field-effect transistor) power switches to switch high currents from any input power supply from 3 to 30 V. High-force shape memory alloy (SMA) actuators generally require high current (up to 9 A at 28 V) to actuate. SMA wires (the driving element of the actuators) can be quickly overheated if power is not removed at the end of stroke, which can damage the wires. The new analog driver prevents overheating of the SMA wires in an actuator by momentarily removing power when the end limit switch is closed, thereby allowing complex control schemes to be adopted without concern for overheating. Either an integral pushbutton or microprocessor-controlled gate or control line inputs switch current to the actuator until the end switch line goes from logic high to logic low state. Power is then momentarily removed (switched off by the MOSFET). The analog driver is suited to use with nearly any SMA actuator.

  5. Investigation of current redistribution in superstabilized superconducting winding when switching to the normal resistive state

    International Nuclear Information System (INIS)

    Devred, A.

    1989-01-01

    We have investigated the electromagnetic behavior of a layer of superstabilized superconductive composite conductors when switching instantaneously and uniformly to the normal resistive state. The Laplace transform was used to solve the current diffusion equation in the superstabilizing material. The value of power dissipated per unit volume, averaged over the layer thickness, was then computed using the ''pseudo''-convolution theorem in the complex plane. Last, we present a simple interpretation of the phenomenon with the help of two time constants

  6. Multiphase soft switched DC/DC converter and active control technique for fuel cell ripple current elimination

    Science.gov (United States)

    Lai, Jih-Sheng; Liu, Changrong; Ridenour, Amy

    2009-04-14

    DC/DC converter has a transformer having primary coils connected to an input side and secondary coils connected to an output side. Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit being connected in parallel wherein each leg is disposed parallel to one another, and the secondary coils connected to a rectifying circuit. An outer loop control circuit that reduces ripple in a voltage reference has a first resistor connected in series with a second resistor connected in series with a first capacitor which are connected in parallel with a second capacitor. An inner loop control circuit that reduces ripple in a current reference has a third resistor connected in series with a fourth resistor connected in series with a third capacitor which are connected in parallel with a fourth capacitor.

  7. Solid state bistable power switch

    Science.gov (United States)

    Bartko, J.; Shulman, H.

    1970-01-01

    Tin and copper provide high current and switching time capabilities for high-current resettable fuses. They show the best performance for trip current and degree of reliability, and have low coefficients of thermal expansion.

  8. An integrated circuit switch

    Science.gov (United States)

    Bonin, E. L.

    1969-01-01

    Multi-chip integrated circuit switch consists of a GaAs photon-emitting diode in close proximity with S1 phototransistor. A high current gain is obtained when the transistor has a high forward common-emitter current gain.

  9. Complementary resistive switching in BaTiO3/NiO bilayer with opposite switching polarities

    Science.gov (United States)

    Li, Shuo; Wei, Xianhua; Lei, Yao; Yuan, Xincai; Zeng, Huizhong

    2016-12-01

    Resistive switching behaviors have been investigated in the Au/BaTiO3/NiO/Pt structure by stacking the two elements with different switching types. The conducting atomic force microscope measurements on BaTiO3 thin films and NiO thin films suggest that with the same active resistive switching region, the switching polarities in the two semiconductors are opposite to each other. It is in agreement with the bipolar hysteresis I-V curves with opposite switching polarities for single-layer devices. The bilayer devices show complementary resistive switching (CRS) without electroforming and unipolar resistive switching (URS) after electroforming. The coexistence of CRS and URS is mainly ascribed to the co-effect of electric field and Joule heating mechanisms, indicating that changeable of resistance in this device is dominated by the redistribution of oxygen vacancies in BaTiO3 and the formation, disruption, restoration of conducting filaments in NiO. CRS in bilayer with opposite switching polarities is effective to solve the sneak current without the introduction of any selector elements or an additional metal electrode.

  10. Quantum dot single-photon switches of resonant tunneling current for discriminating-photon-number detection.

    Science.gov (United States)

    Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Ziqiang; Lu, Wei

    2015-03-23

    Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn "photon-switches" to "OFF" state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished.

  11. Gas tube-switched high voltage DC power converter

    Science.gov (United States)

    She, Xu; Bray, James William; Sommerer, Timothy John; Chokhawala, Rahul

    2018-05-15

    A direct current (DC)-DC converter includes a transformer and a gas tube-switched inverter circuit. The transformer includes a primary winding and a secondary winding. The gas tube-switched inverter circuit includes first and second inverter load terminals and first and second inverter input terminals. The first and second inverter load terminals are coupled to the primary winding. The first and second inverter input terminals are couplable to a DC node. The gas tube-switched inverter circuit further includes a plurality of gas tube switches respectively coupled between the first and second inverter load terminals and the first and second inverter input terminals. The plurality of gas tube switches is configured to operate to generate an alternating current (AC) voltage at the primary winding.

  12. Repetitive switching for an electromagnetic rail gun

    Science.gov (United States)

    Gruden, J. M.

    1983-12-01

    Previous testing on a repetitive opening switch for inductive energy storage has proved the feasibility of the rotary switch concept. The concept consists of a rotating copper disk (rotor) with a pie-shaped insulator section and brushes which slide along each of the rotor surfaces. While on top of the copper surface, the brushes and rotor conduct current allowing the energy storage inductor to charge. When the brushes slide onto the insulator section, the current cannot pass through the rotor and is diverted into the load. This study investigates two new brush designs and a rotor modification designed to improve the current commutating capabilities of the switch. One brush design (fringe fiber) employs carbon fibers on the leading and trailing edge of the brush to increase the resistive commutating action as the switch opens and closes. The other brush design uses fingers to conduct current to the rotor surface, effectively increasing the number of brush contact points. The rotor modification was the placement of tungsten inserts at the copper-insulator interfaces.

  13. MENGAPA PERUSAHAAN MELAKUKAN AUDITOR SWITCH?

    Directory of Open Access Journals (Sweden)

    Kadek Sumadi

    2011-01-01

    Full Text Available The existence of a large number of accounting firms allowsprovides companies choices whether to stay with current firm or switchto another accounting firm. Decision of Minister of FinanceNo.423/KMK.06/2002 states that a company must switch auditor afterfive years of consecutive assignment. This is mandatory. The questionrises when a company voluntarily switches its auditor. Why does thishappen?One of the reasons is that management does not satisfy withauditor opinion, except for unqualified opinion. New management teamwould directly or indirectly encourage auditor switch to align accountingand reporting policies. Moreover an expanding company expects positivereaction when it does auditor switch. Profitability is also one reason fora company to switch auditor, for example, when a company earns moreprofit it tends to hire more credible auditor. On the other hand, when thecompany faces a financial distress, it probably would switch auditor aswell.

  14. Designing single phase Current-Programmed-Controlled rectifiers by harmonic currents

    DEFF Research Database (Denmark)

    Andersen, Gert Karmisholt; Blaabjerg, Frede

    2002-01-01

    The grid current harmonics of a Current-Programmed-Controlled (CPC) pfc rectifier strongly depends on the choice of switching frequency and switching inductance. This paper describes a new simple and vert fast method to calculate the grid current of a CPC controlled pfc converter. The method...

  15. Development of Digital Hysteresis Current Control with PLL Loop Gain Compensation Strategy for PWM Inverters with Constant Switching Frequency

    Directory of Open Access Journals (Sweden)

    N. Belhaouchet

    2008-03-01

    Full Text Available Hysteresis current control is one of the simplest techniques used to control the magnitude and phase angle of motor current for motor drives systems. However, this technique presents several disadvantages such as operation at variable switching frequency which can reveal problems of filtering, interference between the phases in the case of the three-phase systems with insulated neutral connection or delta connection, and irregularity of the modulation pulses which especially causes an acoustic noise on the level of the machine for the high power drive. In this paper, a new technique is proposed for a variable-hysteresis-band controller based on dead beat control applied to three phase voltage source PWM inverters feeding AC motors. Its main aim is firstly ensure a constant switching frequency and secondly the synchronization of modulation pulses using the phase-locked-loop with loop gain compensation in order to ensure a better stability. The behavior of the proposed technique is verified by simulation.

  16. Heavy-duty explosively operated pulsed opening and closing switches

    International Nuclear Information System (INIS)

    Peterson, D.R.; Price, J.H.; Upshaw, J.L.; Weldon, W.F.; Zowarka, R.C.; Gully, J.H.; Spann, M.L.

    1991-01-01

    This paper discusses improvements to heavy duty, explosively operated, opening and closing switches to reduce component cost, installation cost, and turnaround time without sacrificing reliability. Heavy duty opening and closing switches operated by small explosive charges (50 g or less) are essential to operation of the 60 MJ Balcones power supply. The six independent modules - a 10 MJ homopolar generator (HPG) and a 6 μH storage inductor - can be discharged sequentially, a valuable feature for shaping the current pulse delivered to loads such as high-energy railguns. Each delayed inductor must be isolated from the railgun circuit with a heavy duty closing switch capable of carrying megampere currents to millisecond duration. Similar closing switches are used to crowbar the railgun as the projectile approaches the muzzle: noise reduction, reduction of muzzle arc damage, and reduction of post-launch perturbation of projectile flight. The switches - both opening and closing - are characterized by microhm resistance in the closed state. Current is carried in metallic conductors. Metal-to-metal seams which carry current are maintained in uniform high pressure contact. Efficient switching is crucial to efficient conversion: rotor kinetic energy to stored inductive energy with ∼50% efficiency, stored inductive energy to projectile kinetic energy with ∼30% efficiency. The switches must operate with a precision and repeatability of 10 -5 s, readily achievable with explosives. The opening switches must be structurally and thermally capable of carrying megampere currents for more than 100 ms (∼10 5 C) and develop 10 kV upon opening, stay open for 10 - 2 s, and safely and reliably dissipate megajoules of inductive energy in the event of a fault, a failure of the switch to operate or an attempt to commutate into an open circuit

  17. Switch evaluation test system for the National Ignition Facility

    International Nuclear Information System (INIS)

    Savage, M.E.; Simpson, W.W.; Reynolds, F.D.

    1997-01-01

    Flashlamp pumped lasers use pulsed power switches to commute energy stored in capacitor banks to the flashlamps. The particular application in which the authors are interested is the National Ignition Facility (NIF), being designed by Lawrence Livermore National Laboratory, Los Alamos National Laboratory, and Sandia National Laboratories (SNL). To lower the total cost of these switches, SNL has a research program to evaluate large closing switches. The target value of the energy switched by a single device is 1.6 MJ, from a 6 mF, 24kV capacitor bank. The peak current is 500 kA. The lifetime of the NIF facility is 24,000 shots. There is no switch today proven at these parameters. Several short-lived switches (100's of shots) exist that can handle the voltage and current, but would require maintenance during the facility life. Other type devices, notably ignitrons, have published lifetimes in excess of 20,000 shots, but at lower currents and shorter pulse widths. The goal of the experiments at SNL is to test switches with the full NIF wave shape, and at the correct voltage. The SNL facility can provide over 500 kA at 24 kV charge voltage. the facility has 6.4 mF total capacitance, arranged in 25 sub-modules. the modular design makes the facility more flexible (for possible testing at lower current) and safer. For pulse shaping (the NIF wave shape is critically damped) there is an inductor and resistor for each of the 25 modules. Rather than one large inductor and resistor, this lowers the current in the pulse shaping components, and raises their value to those more easily attained with lumped inductors and resistors. The authors show the design of the facility, and show results from testing conducted thus far. They also show details of the testing plan for high current switches

  18. Energy storage, compression, and switching. Vol. 2

    International Nuclear Information System (INIS)

    Nardi, V.; Bostick, W.H.; Sahlin, H.

    1983-01-01

    This book is a compilation of papers presented at the Second International Conference on Energy Storage, Compression, and Switching, which was held in order to assemble active researchers with a major interest in plasma physics, electron beams, electric and magnetic energy storage systems, high voltage and high current switches, free-electron lasers, and pellet implosion plasma focus. Topics covered include: Slow systems: 50-60 Hz machinery, homopolar generators, slow capacitors, inductors, and solid state switches; Intermediate systems: fast capacitor banks; superconducting storage and switching; gas, vacuum, and dielectric switching; nonlinear (magnetic) switching; imploding liners capacitors; explosive generators; and fuses; and Fast systems: Marx, Blumlein, oil, water, and pressurized water dielectrics; switches; magnetic insulation; electron beams; and plasmas

  19. Analytical Performance Evaluation of Different Switch Solutions

    Directory of Open Access Journals (Sweden)

    Francisco Sans

    2013-01-01

    Full Text Available The virtualization of the network access layer has opened new doors in how we perceive networks. With this virtualization of the network, it is possible to transform a regular PC with several network interface cards into a switch. PC-based switches are becoming an alternative to off-the-shelf switches, since they are cheaper. For this reason, it is important to evaluate the performance of PC-based switches. In this paper, we present a performance evaluation of two PC-based switches, using Open vSwitch and LiSA, and compare their performance with an off-the-shelf Cisco switch. The RTT, throughput, and fairness for UDP are measured for both Ethernet and Fast Ethernet technologies. From this research, we can conclude that the Cisco switch presents the best performance, and both PC-based switches have similar performance. Between Open vSwitch and LiSA, Open vSwitch represents a better choice since it has more features and is currently actively developed.

  20. IGBT: a solid state switch

    International Nuclear Information System (INIS)

    Chatroux, D.; Maury, J.; Hennevin, B.

    1993-01-01

    A Copper Vapour Laser Power Supply has been designed using a solid state switch consisting in eighteen Isolated Gate Bipolar Transistors (IGBT), -1200 volts, 400 Amps, each-in parallel. This paper presents the Isolated Gate Bipolar Transistor (IGBTs) replaced in the Power Electronic components evolution, and describes the IGBT conduction mechanism, presents the parallel association of IGBTs, and studies the application of these components to a Copper Vapour Laser Power Supply. The storage capacitor voltage is 820 volts, the peak current of the solid state switch is 17.000 Amps. The switch is connected on the primary of a step-up transformer, followed by a magnetic modulator. The reset of the magnetic modulator is provided by part of the laser reflected energy with a patented circuit. The charging circuit is a resonant circuit with a charge controlled by an IGBT switch. When the switch is open, the inductance energy is free-wheeled by an additional winding and does not extend the charging phase of the storage capacitor. The design allows the storage capacitor voltage to be very well regulated. This circuit is also patented. The electric pulse in the laser has 30.000 Volt peak voltage, 2000 Amp peak current, and is 200 nanoseconds long, for a 200 Watt optical power Copper Vapour Laser

  1. Design of High-Voltage Switch-Mode Power Amplifier Based on Digital-Controlled Hybrid Multilevel Converter

    Directory of Open Access Journals (Sweden)

    Yanbin Hou

    2016-01-01

    Full Text Available Compared with conventional Class-A, Class-B, and Class-AB amplifiers, Class-D amplifier, also known as switching amplifier, employs pulse width modulation (PWM technology and solid-state switching devices, capable of achieving much higher efficiency. However, PWM-based switching amplifier is usually designed for low-voltage application, offering a maximum output voltage of several hundred Volts. Therefore, a step-up transformer is indispensably adopted in PWM-based Class-D amplifier to produce high-voltage output. In this paper, a switching amplifier without step-up transformer is developed based on digital pulse step modulation (PSM and hybrid multilevel converter. Under the control of input signal, cascaded power converters with separate DC sources operate in PSM switch mode to directly generate high-voltage and high-power output. The relevant topological structure, operating principle, and design scheme are introduced. Finally, a prototype system is built, which can provide power up to 1400 Watts and peak voltage up to ±1700 Volts. And the performance, including efficiency, linearity, and distortion, is evaluated by experimental tests.

  2. The NISTmAb Reference Material 8671 lifecycle management and quality plan.

    Science.gov (United States)

    Schiel, John E; Turner, Abigail

    2018-03-01

    Comprehensive analysis of monoclonal antibody therapeutics involves an ever expanding cadre of technologies. Lifecycle-appropriate application of current and emerging techniques requires rigorous testing followed by discussion between industry and regulators in a pre-competitive space, an effort that may be facilitated by a widely available test metric. Biopharmaceutical quality materials, however, are often difficult to access and/or are protected by intellectual property rights. The NISTmAb, humanized IgG1κ Reference Material 8671 (RM 8671), has been established with the intent of filling that void. The NISTmAb embodies the quality and characteristics of a typical biopharmaceutical product, is widely available to the biopharmaceutical community, and is an open innovation tool for development and dissemination of results. The NISTmAb lifecyle management plan described herein provides a hierarchical strategy for maintenance of quality over time through rigorous method qualification detailed in additional submissions in the current publication series. The NISTmAb RM 8671 is a representative monoclonal antibody material and provides a means to continually evaluate current best practices, promote innovative approaches, and inform regulatory paradigms as technology advances. Graphical abstract The NISTmAb Reference Material (RM) 8671 is intended to be an industry standard monoclonal antibody for pre-competitive harmonization of best practices and designing next generation characterization technologies for identity, quality, and stability testing.

  3. Adaptive switching of interaction potentials in the time domain: an extended Lagrangian approach tailored to transmute force field to QM/MM simulations and back.

    Science.gov (United States)

    Böckmann, Marcus; Doltsinis, Nikos L; Marx, Dominik

    2015-06-09

    An extended Lagrangian formalism that allows for a smooth transition between two different descriptions of interactions during a molecular dynamics simulation is presented. This time-adaptive method is particularly useful in the context of multiscale simulation as it provides a sound recipe to switch on demand between different hierarchical levels of theory, for instance between ab initio ("QM") and force field ("MM") descriptions of a given (sub)system in the course of a molecular dynamics simulation. The equations of motion can be integrated straightforwardly using the usual propagators, such as the Verlet algorithm. First test cases include a bath of harmonic oscillators, of which a subset is switched to a different force constant and/or equilibrium position, as well as an all-MM to QM/MM transition in a hydrogen-bonded water dimer. The method is then applied to a smectic 8AB8 liquid crystal and is shown to be able to switch dynamically a preselected 8AB8 molecule from an all-MM to a QM/MM description which involves partition boundaries through covalent bonds. These examples show that the extended Lagrangian approach is not only easy to implement into existing code but that it is also efficient and robust. The technique moreover provides easy access to a conserved energy quantity, also in cases when Nosé-Hoover chain thermostatting is used throughout dynamical switching. A simple quadratic driving potential proves to be sufficient to guarantee a smooth transition whose time scale can be easily tuned by varying the fictitious mass parameter associated with the auxiliary variable used to extend the Lagrangian. The method is general and can be applied to time-adaptive switching on demand between two different levels of theory within the framework of hybrid scale-bridging simulations.

  4. Fast Low-Current Spin-Orbit-Torque Switching of Magnetic Tunnel Junctions through Atomic Modifications of the Free-Layer Interfaces

    Science.gov (United States)

    Shi, Shengjie; Ou, Yongxi; Aradhya, S. V.; Ralph, D. C.; Buhrman, R. A.

    2018-01-01

    Future applications of spin-orbit torque will require new mechanisms to improve the efficiency of switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast nanosecond-scale performance with low-write-error rates. Here, we demonstrate a strategy to simultaneously enhance the interfacial magnetic anisotropy energy and suppress interfacial spin-memory loss by introducing subatomic and monatomic layers of Hf at the top and bottom interfaces of the ferromagnetic free layer of an in-plane magnetized three-terminal MTJ device. When combined with a β -W spin Hall channel that generates spin-orbit torque, the cumulative effect is a switching current density of 5.4 ×106 A /cm2 .

  5. Detail study of SiC MOSFET switching characteristics

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage...

  6. Dual-Input Soft-Switched DC-DC Converter with Isolated Current-Fed Half-Bridge and Voltage-Fed Full-Bridge for Fuel Cell or Photovoltaic Systems

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2013-01-01

    integrate a current-fed boost half-bridge (BHB) and a full-bridge (FB) into one equivalent circuit configuration which has dual-input ability and additionally it can reduce the number of the power devices. With the phase-shift control, it can achieve zero-voltage switching turn-on of active switches...... power rating are built up and tested to demonstrate the effectiveness of the proposed converter topology....

  7. Software Defined Networking (SDN) controlled all optical switching networks with multi-dimensional switching architecture

    Science.gov (United States)

    Zhao, Yongli; Ji, Yuefeng; Zhang, Jie; Li, Hui; Xiong, Qianjin; Qiu, Shaofeng

    2014-08-01

    Ultrahigh throughout capacity requirement is challenging the current optical switching nodes with the fast development of data center networks. Pbit/s level all optical switching networks need to be deployed soon, which will cause the high complexity of node architecture. How to control the future network and node equipment together will become a new problem. An enhanced Software Defined Networking (eSDN) control architecture is proposed in the paper, which consists of Provider NOX (P-NOX) and Node NOX (N-NOX). With the cooperation of P-NOX and N-NOX, the flexible control of the entire network can be achieved. All optical switching network testbed has been experimentally demonstrated with efficient control of enhanced Software Defined Networking (eSDN). Pbit/s level all optical switching nodes in the testbed are implemented based on multi-dimensional switching architecture, i.e. multi-level and multi-planar. Due to the space and cost limitation, each optical switching node is only equipped with four input line boxes and four output line boxes respectively. Experimental results are given to verify the performance of our proposed control and switching architecture.

  8. Five ab initio potential energy and dipole moment surfaces for hydrated NaCl and NaF. I. Two-body interactions

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yimin, E-mail: yimin.wang@emory.edu; Bowman, Joel M., E-mail: jmbowma@emory.edu [Department of Chemistry, Cherry L. Emerson Center for Scientific Computation, Emory University, Atlanta, Georgia 30322 (United States); Kamarchik, Eugene, E-mail: eugene.kamarchik@gmail.com [Quantum Pomegranate, LLC, 2604 Kings Lake Court NE, Atlanta, Georgia 30345 (United States)

    2016-03-21

    We report full-dimensional, ab initio-based potentials and dipole moment surfaces for NaCl, NaF, Na{sup +}H{sub 2}O, F{sup −}H{sub 2}O, and Cl{sup −}H{sub 2}O. The NaCl and NaF potentials are diabatic ones that dissociate to ions. These are obtained using spline fits to CCSD(T)/aug-cc-pV5Z energies. In addition, non-linear least square fits using the Born-Mayer-Huggins potential are presented, providing accurate parameters based strictly on the current ab initio energies. The long-range behavior of the NaCl and NaF potentials is shown to go, as expected, accurately to the point-charge Coulomb interaction. The three ion-H{sub 2}O potentials are permutationally invariant fits to roughly 20 000 coupled cluster CCSD(T) energies (awCVTZ basis for Na{sup +} and aVTZ basis for Cl{sup −} and F{sup −}), over a large range of distances and H{sub 2}O intramolecular configurations. These potentials are switched accurately in the long range to the analytical ion-dipole interactions, to improve computational efficiency. Dipole moment surfaces are fits to MP2 data; for the ion-ion cases, these are well described in the intermediate- and long-range by the simple point-charge expression. The performance of these new fits is examined by direct comparison to additional ab initio energies and dipole moments along various cuts. Equilibrium structures, harmonic frequencies, and electronic dissociation energies are also reported and compared to direct ab initio results. These indicate the high fidelity of the new PESs.

  9. Design of all-optical, hot-electron current-direction-switching device based on geometrical asymmetry.

    Science.gov (United States)

    Kumarasinghe, Chathurangi S; Premaratne, Malin; Gunapala, Sarath D; Agrawal, Govind P

    2016-02-18

    We propose a nano-scale current-direction-switching device(CDSD) that operates based on the novel phenomenon of geometrical asymmetry between two hot-electron generating plasmonic nanostructures. The proposed device is easy to fabricate and economical to develop compared to most other existing designs. It also has the ability to function without external wiring in nano or molecular circuitry since it is powered and controlled optically. We consider a such CDSD made of two dissimilar nanorods separated by a thin but finite potential barrier and theoretically derive the frequency-dependent electron/current flow rate. Our analysis takes in to account the quantum dynamics of electrons inside the nanorods under a periodic optical perturbation that are confined by nanorod boundaries, modelled as finite cylindrical potential wells. The influence of design parameters, such as geometric difference between the two nanorods, their volumes and the barrier width on quality parameters such as frequency-sensitivity of the current flow direction, magnitude of the current flow, positive to negative current ratio, and the energy conversion efficiency is discussed by considering a device made of Ag/TiO2/Ag. Theoretical insight and design guidelines presented here are useful for customizing our proposed CDSD for applications such as self-powered logic gates, power supplies, and sensors.

  10. Switching dynamics of TaOx-based threshold switching devices

    Science.gov (United States)

    Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

    2018-03-01

    Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

  11. A new Zero-Voltage-Transition PWM switching cell

    Energy Technology Data Exchange (ETDEWEB)

    Grigore, V. [Electronics and Telecommunications Faculty `Politebuica` University Bucharest (Romania); Kyyrae, J. [Helsinki University of Technology, Otaniemi (Finland): Institute of Intelligent Power Electronics

    1997-12-31

    In this paper a new Zero-Voltage-Transition (ZVT) PWM switching cell is presented. The proposed switching cell is composed of the normal hard-switched PWM cell (consisting of one active switch and one passive switch), plus an auxiliary circuit (consisting of one active switch and some reactive components). The auxiliary circuit is inactive during the ON and OFF intervals of the switches in the normal PWM switch. However, the transitions between the two states are controlled by the auxiliary circuit. Prior to turn-on, the voltage across the active switch in the PWM cell is forced to zero, thus the turn-on losses of the active switch are practically eliminated. At turn-off the auxiliary circuit behaves like a non-dissipative passive snubber reducing the turn-off losses to a great extent. Zero-Voltage-Transition switching technique almost eliminates switching losses. The active switch operates under ZVT conditions, the passive switch (diode) has a controlled reverse recovery, and the switch in the auxiliary circuit operates under Zero-Current-Switching (ZCS) conditions. (orig.) 6 refs.

  12. Current-Nonlinear Hall Effect and Spin-Orbit Torque Magnetization Switching in a Magnetic Topological Insulator

    Science.gov (United States)

    Yasuda, K.; Tsukazaki, A.; Yoshimi, R.; Kondou, K.; Takahashi, K. S.; Otani, Y.; Kawasaki, M.; Tokura, Y.

    2017-09-01

    The current-nonlinear Hall effect or second harmonic Hall voltage is widely used as one of the methods for estimating charge-spin conversion efficiency, which is attributed to the magnetization oscillation by spin-orbit torque (SOT). Here, we argue the second harmonic Hall voltage under a large in-plane magnetic field with an in-plane magnetization configuration in magnetic-nonmagnetic topological insulator (TI) heterostructures, Crx (Bi1 -ySby )2 -xTe3 /(Bi1 -ySby )2Te3 , where it is clearly shown that the large second harmonic voltage is governed not by SOT but mainly by asymmetric magnon scattering without macroscopic magnetization oscillation. Thus, this method does not allow an accurate estimation of charge-spin conversion efficiency in TI. Instead, the SOT contribution is exemplified by current pulse induced nonvolatile magnetization switching, which is realized with a current density of 2.5 ×1010 A m-2 , showing its potential as a spintronic material.

  13. Micro-spectroscopic investigation of valence change processes in resistive switching SrTiO3 thin films

    International Nuclear Information System (INIS)

    Koehl, Annemarie

    2014-01-01

    Due to physical limitations of the currently used flash memory in terms of writing speed and scalability, new concepts for data storage attract great interest. A possible alternative with promising characteristics are so-called ''Resistive Random Access Memories'' (ReRAM). These memory devices are based on the resistive switching effect where the electrical resistance of a metal-insulator-metal (MIM) structure can be switched reversibly by a current or voltage pulse. Although this effect attracted wide scientific as well as commercial interest, up to now the it is not fully understood on a microscopic scale. Consequently, in this work the chemical and physical modifications caused by the resistive switching process are studied by spectroscopic techniques. As most switching models predict a strongly localized rather than a homogeneous effect, advanced micro-spectroscopy techniques are employed where additionally the lateral structure of the sample is imaged. In this work Fe-doped SrTiO 3 films are used as model material due to the thorough understanding of their defect chemistry. The epitaxial thin films are prepared by pulsed laser deposition. In a first approach, transmission X-ray microscopy is employed to study the bulk properties of ReRAM devices. At first, a new procedure for sample preparation based on a selective etching process is developed in order to realize photon-transparent samples. Investigations of switched devices reveal a significant contribution of Ti 3+ states within growth defects. In contrast to the indirect evidence in previous studies, this observation directly confirms that the resistance change is based on a local redox-process. The localization of the switching process within the growth defects is explained by a self-accelerating process due to Joule heating within the pre-reduced defects. In a second approach, after removal of the top electrode the chemical and electronic structure of the former interface between the

  14. Photoconductive switch enhancements for use in Blumlein pulse generators

    International Nuclear Information System (INIS)

    Davanloo, F.; Park, H.; Collins, C. B.; Agee, F. J.

    1999-01-01

    Stacked Blumlein pulse generators developed at the University of Texas at Dallas have produced high-power waveforms with risetimes and repetition rates in the range of 0.2-50 ns and 1-300 Hz, respectively, using a conventional thyratron, spark gap or photoconductive switch. Adaptation of the design has enabled the stacked Blumleins to produce 80 MW, nanosecond pulses with risetimes better than 200 ps into nominally matched loads. The device has a compact line geometry and is commutated by a single GaAs photoconductive switch triggered by a low power laser diode array. Our current investigations involve the switch characteristics that affect the broadening of the current channels in the avalanche, pre-avalanche seedings, the switch lifetime and the durability. This report presents the progress toward improving the GaAs switch operation and lifetime in stacked Blumlein pulsers. Advanced switch treatments including diamond film overcoating are implemented and discussed

  15. Current limiter circuit system

    Science.gov (United States)

    Witcher, Joseph Brandon; Bredemann, Michael V.

    2017-09-05

    An apparatus comprising a steady state sensing circuit, a switching circuit, and a detection circuit. The steady state sensing circuit is connected to a first, a second and a third node. The first node is connected to a first device, the second node is connected to a second device, and the steady state sensing circuit causes a scaled current to flow at the third node. The scaled current is proportional to a voltage difference between the first and second node. The switching circuit limits an amount of current that flows between the first and second device. The detection circuit is connected to the third node and the switching circuit. The detection circuit monitors the scaled current at the third node and controls the switching circuit to limit the amount of the current that flows between the first and second device when the scaled current is greater than a desired level.

  16. Comparison of switching control algorithms effective in restricting the switching in the neighborhood of the origin

    International Nuclear Information System (INIS)

    Joung, JinWook; Chung, Lan; Smyth, Andrew W

    2010-01-01

    The active interaction control (AIC) system consisting of a primary structure, an auxiliary structure and an interaction element was proposed to protect the primary structure against earthquakes and winds. The objective of the AIC system in reducing the responses of the primary structure is fulfilled by activating or deactivating the switching between the engagement and the disengagement of the primary and auxiliary structures through the interaction element. The status of the interaction element is controlled by switching control algorithms. The previously developed switching control algorithms require an excessive amount of switching, which is inefficient. In this paper, the excessive amount of switching is restricted by imposing an appropriately designed switching boundary region, where switching is prohibited, on pre-designed engagement–disengagement conditions. Two different approaches are used in designing the newly proposed AID-off and AID-off 2 algorithms. The AID-off 2 algorithm is designed to affect deactivated switching regions explicitly, unlike the AID-off algorithm, which follows the same procedure of designing the engagement–disengagement conditions of the previously developed algorithms, by using the current status of the AIC system. Both algorithms are shown to be effective in reducing the amount of switching times triggered from the previously developed AID algorithm under an appropriately selected control sampling period for different earthquakes, but the AID-off 2 algorithm outperforms the AID-off algorithm in reducing the number of switching times

  17. AN ANALYTICAL STUDY OF SWITCHING TRACTION MOTORS

    Directory of Open Access Journals (Sweden)

    V. M. Bezruchenko

    2010-03-01

    Full Text Available The analytical study of switching of the tractive engines of electric locomotives is conducted. It is found that the obtained curves of change of current of the sections commuted correspond to the theory of average rectilinear switching. By means of the proposed method it is possible on the stage of design of tractive engines to forecast the quality of switching and to correct it timely.

  18. Streamer model for high voltage water switches

    International Nuclear Information System (INIS)

    Sazama, F.J.; Kenyon, V.L. III

    1979-01-01

    An electrical switch model for high voltage water switches has been developed which predicts streamer-switching effects that correlate well with water-switch data from Casino over the past four years and with switch data from recent Aurora/AMP experiments. Preclosure rounding and postclosure resistive damping of pulseforming line voltage waveforms are explained in terms of spatially-extensive, capacitive-coupling of the conducting streamers as they propagate across the gap and in terms of time-dependent streamer resistance and inductance. The arc resistance of the Casino water switch and of a gas switch under test on Casino was determined by computer fit to be 0.5 +- 0.1 ohms and 0.3 +- 0.06 ohms respectively, during the time of peak current in the power pulse. Energy lost in the water switch during the first pulse is 18% of that stored in the pulseforming line while similar energy lost in the gas switch is 11%. The model is described, computer transient analyses are compared with observed water and gas switch data and the results - switch resistance, inductance and energy loss during the primary power pulse - are presented

  19. Micro-spectroscopic investigation of valence change processes in resistive switching SrTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Koehl, Annemarie

    2014-05-15

    Due to physical limitations of the currently used flash memory in terms of writing speed and scalability, new concepts for data storage attract great interest. A possible alternative with promising characteristics are so-called ''Resistive Random Access Memories'' (ReRAM). These memory devices are based on the resistive switching effect where the electrical resistance of a metal-insulator-metal (MIM) structure can be switched reversibly by a current or voltage pulse. Although this effect attracted wide scientific as well as commercial interest, up to now the it is not fully understood on a microscopic scale. Consequently, in this work the chemical and physical modifications caused by the resistive switching process are studied by spectroscopic techniques. As most switching models predict a strongly localized rather than a homogeneous effect, advanced micro-spectroscopy techniques are employed where additionally the lateral structure of the sample is imaged. In this work Fe-doped SrTiO{sub 3} films are used as model material due to the thorough understanding of their defect chemistry. The epitaxial thin films are prepared by pulsed laser deposition. In a first approach, transmission X-ray microscopy is employed to study the bulk properties of ReRAM devices. At first, a new procedure for sample preparation based on a selective etching process is developed in order to realize photon-transparent samples. Investigations of switched devices reveal a significant contribution of Ti{sup 3+} states within growth defects. In contrast to the indirect evidence in previous studies, this observation directly confirms that the resistance change is based on a local redox-process. The localization of the switching process within the growth defects is explained by a self-accelerating process due to Joule heating within the pre-reduced defects. In a second approach, after removal of the top electrode the chemical and electronic structure of the former interface

  20. Determining Switched Reluctance Motor Current Waveforms Exploiting the Transformation from the Time to the Position Domain

    Directory of Open Access Journals (Sweden)

    Jakub Bernat

    2017-06-01

    Full Text Available This paper addresses the issue of estimating current waveforms in a switched reluctance motor required to achieve a desired electromagnetic torque. The methodology employed exploits the recently-developed method based on the transformation from the time to the position domain. This transformation takes account of nonlinearities caused by a doubly-salient structure. Owing to this new modelling technique it is possible to solve optimization problems with reference torque, constrained voltage, and parameter sensitivity accounted for. The proposed methodology is verified against published solutions and illustrated through simulations and experiments.

  1. Current delivery and radiation yield in plasma flow switch-driven implosions

    International Nuclear Information System (INIS)

    Baker, W.L.; Degnan, J.H.; Beason, J.D.

    1995-01-01

    Vacuum inductive-store, plasma flow switch-driven implosion experiments have been performed using the Shiva Star capacitor bank (1300 μf, 3 nH, 120 kV, 9.4 MJ). A coaxial plasma gun arrangement is employed to store magnetic energy in the vacuum volume upstream of a dynamic discharge during the 3- to 4-μs rise of current from the capacitor bank. Motion of the discharge off the end of the inner conductor of the gun releases this energy to implode a coaxial cylindrical foil. The implosion loads are 5-cm-radius, 2-cm-long, 200 to 400 μg/cm 2 cylinders of aluminum or aluminized Formvar. With 5 MJ stored initially in the capacitor bank, more than 9 MA are delivered to the implosion load with a rise time of nearly 200 ns. The subsequent implosion results in a radiation output of 0.95 MJ at a power exceeding 5 TW (assuming isotropic emission). Experimental results and related two-dimensional magnetohydrodynamic simulations are discussed. 10 refs., 12 figs

  2. High-efficiency thermal switch based on topological Josephson junctions

    Science.gov (United States)

    Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

    2017-02-01

    We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

  3. Untriggered water switching

    International Nuclear Information System (INIS)

    Van Devender, J.P.; Martin, T.H.

    Recent experiments indicate that synchronous untriggered multichannel switching in water will permit the development of relatively simple, ultra-low impedance, short pulse, relativistic electron beam (REB) accelerators. These experiments resulted in the delivery of a 1.5 MV, 0.75 MA, 15 ns pulse into a two-ohm line with a current risetime of 2 x 10 14 A/sec. The apparatus consisted of a 3 MV Marx generator and a series of three 112 cm wide strip water lines separated by two edge-plane water-gap switches. The Marx generator charged the first line in less than 400 ns. The first switch then formed five or more channels. The second line was charged in 60 ns and broke down with 10 to 25 channels at a mean field of 1.6 MV/cm. The closure time of each spark channel along both switches was measured with a streak camera and showed low jitter. The resulting fast pulse line construction is simpler and should provide considerable costs savings from previous designs. Multiples of these low impedance lines in parallel can be employed to obtain power levels in the 10 14 W range for REB fusion studies. (U.S.)

  4. Bimetallic nanoparticles for surface modification and lubrication of MEMS switch contacts

    International Nuclear Information System (INIS)

    Patton, Steven T; Hu Jianjun; Slocik, Joseph M; Campbell, Angela; Naik, Rajesh R; Voevodin, Andrey A

    2008-01-01

    Reliability continues to be a critical issue in microelectromechanical systems (MEMS) switches. Failure mechanisms include high contact resistance (R), high adhesion, melting/shorting, and contact erosion. Little previous work has addressed the lubrication of MEMS switches. In this study, bimetallic nanoparticles (NPs) are synthesized using a biotemplated approach and deposited on Au MEMS switch contacts as a nanoparticle-based lubricant. Bimetallic nanoparticles are comprised of a metallic core (∼10 nm diameter gold nanoparticle) with smaller metallic nanoparticles (∼2-3 nm diameter Pd nanoparticles) populating the core surface. Adhesion and resistance (R) were measured during hot switching experiments at low (10 μA) and high (1 mA) current. The Au/Pd NP coated contacts led to reduced adhesion as compared to pure Au contacts with a compromise of slightly higher R. For switches held in the closed position at low current, R gradually decreased over tens of seconds due to increased van der Waals force and growth of the real area of contact with temporal effects being dominant over load effects. Contact behavior transitioned from 'Pd-like' to 'Au-like' during low current cycling experiments. Melting at high current resulted in rapid formation of large real contact area, low and stable R, and minimal effect of load on R. Durability at high current was excellent with no failure through 10 6 hot switching cycles. Improvement at high current is due to controlled nanoscale surface roughness that spreads current through multiple nanocontacts, which restricts the size of melting regions and causes termination of nanowire growth (prevents shorting) during contact opening. Based on these results, bimetallic NPs show excellent potential as surface modifiers/lubricants for MEMS switch contacts

  5. Frequency-Controlled Current-Fed Resonant Converter with No Input Ripple Current

    Directory of Open Access Journals (Sweden)

    Bor-Ren Lin

    2018-02-01

    Full Text Available This paper studies a frequency-controlled current-fed resonant circuit. The adopted direct current (DC-to-DC converter contains two boost circuits and a resonant circuit on the primary side. First, two boost circuits are connected in parallel to achieve voltage step-up and reduce input ripple current by using interleaved pulse-width modulation. Therefore, the size and current rating of boost inductors are decreased in the proposed converter. Second, the boost voltage is connected to the resonant circuit to realize the mechanism of the zero-voltage switching of all active switches and zero-current switching of all diodes. Two boost circuits and a resonant circuit use the same power devices in order to lessen the switch counts. The voltage doubler topology is adopted on the secondary side (high-voltage side. Therefore, the voltage rating of diodes on the high-voltage side is clamped at output voltage. The feasibility of the studied circuit is confirmed by the experimental tests with a 1 kW prototype circuit.

  6. New solid state opening switches for repetitive pulsed power technology

    Energy Technology Data Exchange (ETDEWEB)

    Lyubutin, S K; Mesyats, G A; Rukin, S N; Slovikovskii, B G; Turov, A M [Russian Academy of Sciences, Ekaterinburg (Russian Federation). Inst. of Electrophysics

    1997-12-31

    In 1991 the authors discovered a semiconductor opening switch (SOS) effect that occurs in p{sup +}-p-n-n{sup +} silicon structures at a current density of up to 60 kA/cm{sup 2}. This effect was used to develop high-power semiconductor opening switches in intermediate inductive storage circuits. The breaking power of the opening switches was as high as 5 GW, the interrupted current being up to 45 kA, reverse voltage up to 1 MV and the current interruption time between 10 and 60 ns. The opening switches were assembled from quantity-produced Russian-made rectifying diodes type SDL with hard recovery characteristic. On the basis of experimental and theoretical investigations of the SOS effect, new SOS diodes were designed and manufactured by the Electrophysical Institute. The paper gives basic parameters of the SOS diodes. The new diodes offer higher values of interrupted current and shorter times of current interruption together with a considerable increase in the energy switching efficiency. The new SOS diodes were used to develop repetitive all-solid-state pulsed generators with an output voltage of up to 250 kV, pulse repetition rate up to 5 kHz, and pulse duration between 10 and 30 ns. (author). 2 tabs., 3 figs., 4 refs.

  7. A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current

    Science.gov (United States)

    Chien, Wei-Chih; Chen, Yi-Chou; Lee, Feng-Ming; Lin, Yu-Yu; Lai, Erh-Kun; Yao, Yeong-Der; Gong, Jeng; Horng, Sheng-Fu; Yeh, Chiao-Wen; Tsai, Shih-Chang; Lee, Ching-Hsiung; Huang, Yu-Kai; Chen, Chun-Fu; Kao, Hsiao-Feng; Shih, Yen-Hao; Hsieh, Kuang-Yeu; Lu, Chih-Yuan

    2011-04-01

    The behavior of WOX resistive random access memory (ReRAM) is a strong function of the top electrode material, which controls the conduction mechanism and the forming process. When using a top electrode with low work function, the current conduction is limited by space charges. On the other hand, the mechanism becomes thermionic emission for devices with a high work function top electrode. These (thermionic) devices are also found to have higher initial resistance, reduced forming current, and larger resistance window. Based on these insights and considering the compatibility to complementary metal-oxide-semiconductor (CMOS) process, we proposed to use Ni as the top electrode for high performance WOX ReRAM devices. The new Ni/WOX/W device can be switched at a low current density less than 8×105 A/cm2, with RESET/SET resistance ratio greater than 100, and extremely good data retention of more than 300 years at 85 °C.

  8. Development of microsecond generators with plasma current interrupting switch in I.V. Kurchatov Institute of Atomic Energy. Frequency operation of generators

    International Nuclear Information System (INIS)

    Babykin, V.M.; Chikin, R.V.; Dolgachev, G.I.; Golovanov, Yu.P.; Kovalev, Yu.I.; Ushakov, A.G.; Zakatov, L.P.

    1993-01-01

    This paper is a follow up to previously published work on microsecond plasma current interrupting switches (PCIS), which has been conducted in the I.V. Kurchatov Inst. Here the authors present some information on the practical implementation of such devices, and provide an overview of new research facilities

  9. Clinical significance of determination of serum leptin and AsAb, EmAb levels in infertile women

    International Nuclear Information System (INIS)

    Luo Jian; Zhou Minglian; Sun Gang; He Haoming

    2010-01-01

    Objective: To study the clinical significance of determination of serum leptin, AsAb, and EmAb levels in infertile women. Methods: Serum leptin (with RIA) and AsAb, EmAb (with ELISA) levels were detected in 32 infertile women and 35 controls. Results: Serum leptin levels in infertile women were significantly lower than those in controls (P<0.01). Serum AsAb and EmAb were both positive in 25 of the 32 infertile women (78.1%) and EmAb (one of two Abs) was positive in the rest 7 women (21.9%). These positive rates were also significantly higher than the respective ones in the controls (both P<0.01). Conclusion: Lower serum leptin level with highly positive AsAb and EmAb might be the chief cause of infertility in women. (authors)

  10. Plasma-ring, fast-opening switch

    International Nuclear Information System (INIS)

    Hartman, C.W.; Eddleman, J.; Hammer, J.H.

    1986-01-01

    The authors discuss a fast-opening switch concept based on magnetically confined plasma rings, PROS (for Plasma Ring Opening Switch). In PROS, the plasma ring, confined by Bθ /sub and B/poloidal /sub fields of a compact torus, provide a low mass, localized conduction path between coaxial electrodes. To operate the switch, driver current is passed across the electrodes through the ring, storing inductive energy in external inductance and between the electrodes on the driver side of the ring. The ring is accelerated away from the driver by the field of the driver current and passes over a load gap transferring the current to the load. The authors distinguish two configurations in PROS, straight PROS where the electrodes are coaxial cylinders, and cone PROS with conical electrodes. In straight PROS ring acceleration takes place during the inductive store period as in foil switches, but with the localized ring providing the current path. Increased performance is predicted for the cone PROS (see figure) which employs compression of the ring in the cone during the inductive store period. Here, the B/θ /sub field of the driver forces the ring towards the apex of the cone but the force is in near balance with the opposing component of the radial equilibrium force of the ring along the cone. As a result, the ring undergoes a slow, quasistatic compression limited only by resistive decay of the ring field. Slow compression allows inductive storage with low-power drivers (homopoloar, magneto cumulative generators, high C-low V capacitor banks, etc.). Near the apex of the cone, near peak compression, the ring is allowed to enter a straight coaxial section where, because of low-mass, it rapidly accelerates to high velocity and crosses the load gap

  11. Progress in switching technology for METS systems

    International Nuclear Information System (INIS)

    Honig, E.M.; Swannack, C.E.; Warren, R.W.; Whitaker, D.H.

    1977-01-01

    Three distinct sets of switching requirements have emerged from design optimization studies of large superconducting magnetic energy storage systems, such as the METS system to power the adiabatic plasma compression field in the proposed theta-pinch SFTR. Extremely low joule loss cryogenic disconnects are required between storage coils in the liquid helium environment to allow charging the coils in series over a prolonged time, then to isolate the coils for parallel fast discharging into the load. Another switch must break the current in the series charging loop and absorb the energy from the stray inductance. This action will allow the subsequent opening of the cryogenic disconnects under near zero current condition. The current now has been transferred to the many paralleled circuits, each containing a high current, high voltage interrupter. The opening and arc commutation of the interrupter starts the energy transfer into the load. The primary activities associated with cryogenic disconnect have been testing and development of contact materials, configurations, and closing forces for carrying 26 kA with a resistance less than 40 nΩ, and development of an actuating system that is both reliable and fast acting in a liquid helium environment. The charging loop switch will include a continuous duty switch and a vacuum interrupter. The continuous duty switch resistance can be an order of magnitude larger than that of the cryogenic disconnect because it does not present a refrigeration load. The HVDC interrupter must break 26 kA and withstand 60 kV during the energy transfer time of 700 μs. Testing in progress already has shown successful interruption using single vacuum interrupters up to 31 kA and 66 kV

  12. Bimetallic nanoparticles for surface modification and lubrication of MEMS switch contacts

    Energy Technology Data Exchange (ETDEWEB)

    Patton, Steven T; Hu Jianjun [University of Dayton Research Institute, Dayton, OH 45469-0168 (United States); Slocik, Joseph M; Campbell, Angela; Naik, Rajesh R; Voevodin, Andrey A [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433-7750 (United States)], E-mail: steve.patton@wpafb.af.mil, E-mail: rajesh.naik@wpafb.af.mil

    2008-10-08

    Reliability continues to be a critical issue in microelectromechanical systems (MEMS) switches. Failure mechanisms include high contact resistance (R), high adhesion, melting/shorting, and contact erosion. Little previous work has addressed the lubrication of MEMS switches. In this study, bimetallic nanoparticles (NPs) are synthesized using a biotemplated approach and deposited on Au MEMS switch contacts as a nanoparticle-based lubricant. Bimetallic nanoparticles are comprised of a metallic core ({approx}10 nm diameter gold nanoparticle) with smaller metallic nanoparticles ({approx}2-3 nm diameter Pd nanoparticles) populating the core surface. Adhesion and resistance (R) were measured during hot switching experiments at low (10 {mu}A) and high (1 mA) current. The Au/Pd NP coated contacts led to reduced adhesion as compared to pure Au contacts with a compromise of slightly higher R. For switches held in the closed position at low current, R gradually decreased over tens of seconds due to increased van der Waals force and growth of the real area of contact with temporal effects being dominant over load effects. Contact behavior transitioned from 'Pd-like' to 'Au-like' during low current cycling experiments. Melting at high current resulted in rapid formation of large real contact area, low and stable R, and minimal effect of load on R. Durability at high current was excellent with no failure through 10{sup 6} hot switching cycles. Improvement at high current is due to controlled nanoscale surface roughness that spreads current through multiple nanocontacts, which restricts the size of melting regions and causes termination of nanowire growth (prevents shorting) during contact opening. Based on these results, bimetallic NPs show excellent potential as surface modifiers/lubricants for MEMS switch contacts.

  13. Electronically commutated serial-parallel switching for motor windings

    Science.gov (United States)

    Hsu, John S [Oak Ridge, TN

    2012-03-27

    A method and a circuit for controlling an ac machine comprises controlling a full bridge network of commutation switches which are connected between a multiphase voltage source and the phase windings to switch the phase windings between a parallel connection and a series connection while providing commutation discharge paths for electrical current resulting from inductance in the phase windings. This provides extra torque for starting a vehicle from lower battery current.

  14. Plasma flow switch characterization for the Los Alamos Foil Implosion Project

    International Nuclear Information System (INIS)

    Bowers, R.L.; Brownell, J.H.; Greene, A.E.; Peterson, D.L.

    1990-01-01

    The next system design under consideration for the Los Alamos Foil Implosion Project is projected to deliver tens of mega-amperes of electrical current produced by high-explosive driven flux compression generators on a time scale of about one microsecond to a load foil. The use of such generators, with time scales of order several tenths of a millisecond, leads to considerable pulse shaping problems. Previously it was noted that a commutating switch might serve as an efficient alternative to a closing switch in transferring current from a coaxial transmission line to a cylindrically imploding load. Research at the Air Force Weapons Laboratory (AFWL) has met with considerable success in efficiently transferring currents of order 10 MA to an imploding liner using the plasma flow switch concept (PFS). Besides efficiently transferring current, the plasma flow switch protects the load region from high voltages generated by an opening switch until the current is present to provide magnetic insulation. For these reasons, a PFS is being investigated as the final pulse shaping step in the design. A series of capacitor bank experiments is also being fielded to help investigate physics issues and to benchmark the codes

  15. Mechanisms of current conduction in Pt/BaTiO3/Pt resistive switching cell

    International Nuclear Information System (INIS)

    Pan, R.K.; Zhang, T.J.; Wang, J.Y.; Wang, J.Z.; Wang, D.F.; Duan, M.G.

    2012-01-01

    The 80-nm-thickness BaTiO 3 (BT) thin film was prepared on the Pt/Ti/SiO 2 /Si substrate by the RF magnetron sputtering technique. The Pt/BT/Pt/Ti/SiO 2 /Si structure was investigated using X-ray diffraction and scanning electron microscopy. The current–voltage characteristic measurements were performed. The bipolar resistive switching behavior was found in the Pt/BT/Pt cell. The current–voltage curves were well fitted in different voltage regions at the high resistance state (HRS) and the low resistance state (LRS), respectively. The conduction mechanisms are concluded to be Ohmic conduction and Schottky emission at the LRS, while space-charge-limited conduction and Poole–Frenkel emission at the HRS. The electroforming and switching processes were explained in terms of the valence change mechanism, in which oxygen vacancies play a key role in forming conducting paths. - Highlights: ►Pt/BaTiO 3 /Pt cell shows the bipolar resistive switching behavior. ►The current–voltage curves were well fitted for different conduction mechanisms. ►The electroforming and switching processes were explained.

  16. Continuing studies of plasma erosion switches for power conditioning on multiterawatt pulsed power accelerators

    International Nuclear Information System (INIS)

    Stringfield, R.; Gilman, C.; James, G.; Peters, T.; Sincerny, P.; Wong, S.

    1983-01-01

    Recent PITHON experiments with plasma erosion switches (PES) have extended the range of operation of the switches by about 50 percent, in terms of closed time and charge passing through the switch. The quantity of charge passed through the switch has been increased to as much as 35 mC. Currents as large as 1 MA and voltages as great as 1.8 MV have been switched off to be diverted to a downstream load. The impedance of the erosion switch can be described as having three stages: 1) essentially zero impedance, 2) a transitional opening phase, and 3) an impedance which is very large (greater than 5 Ω) in comparison with the subohm downstream load. Current diagnostics, consisting of Rogowski coils and segmented shunts, have been successfully developed to monitor the current which propagates to the load region. These monitors have measured rise times as short as 38 ns and slew rates as great as 10 14 A/s at the load. With wire array loads, the pulse conditioning of the switch has been observed to reduce the magnitude of the current losses in the feed which are present when no switch is used. Correlations have been made between the switch closed time, voltage, current, and power with the feed inductance and the generator power injected into the magnetic insulated transmission line (MITL)

  17. Method and system for a gas tube-based current source high voltage direct current transmission system

    Science.gov (United States)

    She, Xu; Chokhawala, Rahul Shantilal; Bray, James William; Sommerer, Timothy John; Zhou, Rui; Zhang, Di

    2017-08-29

    A high-voltage direct-current (HVDC) transmission system includes an alternating current (AC) electrical source and a power converter channel that includes an AC-DC converter electrically coupled to the electrical source and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and the DC-AC inverter each include a plurality of legs that includes at least one switching device. The power converter channel further includes a commutating circuit communicatively coupled to one or more switching devices. The commutating circuit is configured to "switch on" one of the switching devices during a first portion of a cycle of the H-bridge switching circuits and "switch off" the switching device during a second portion of the cycle of the first and second H-bridge switching circuits.

  18. Interrupter and hybrid-switch testing for fusion devices

    International Nuclear Information System (INIS)

    Parsons, W.M.; Warren, R.W.; Honig, E.M.; Lindsay, J.D.G.; Bellamo, P.; Cassel, R.L.

    1979-01-01

    This paper discusses recent and ongoing switch testing for fusion devices. The first part describes testing for the TFTR ohmic-heating circuit. In this set of tests, which simulated the stresses produced during a plasma initiation pulse, circuit breakers were required to interrupt a current of 24 kA with an associated recovery voltage of 25 kV. Two interrupter systems were tested for over 1000 operations each, and both appear to satisfy TFTR requirements. The second part discusses hybrid-switch development for superconducting coil protection. These switching systems must be capable of carrying large currents on a continuous basis as well as performing interruption duties. The third part presents preliminary results on an early-counterpulse technique applied to vacuum interrupters. Implementation of this technique has resulted in large increases in interruptible current as well as a marked reduction in contact erosion

  19. Protection and switching system for the RFX power supply

    International Nuclear Information System (INIS)

    Browning, J.L.; Gray, J.W.; Mace, T.A.; Varley, G.L.

    1986-01-01

    The RFX toroidal field power supply comprises a large 4.8MJ (max) modular capacitor bank and four 14MW AC/DC converter flat-top power supply modules. The high fault level associated with the capacitor banks presents a problem in the design of the switching system, since mistiming could produce large currents in the flat-top supplies. The poloidal circuit consists of four groups of magnetising windings connected in series, each with its own flat-top convertor supply and opening switch transfer system. The flat-top converter supplies are needed when the transfer voltage has fallen from approximately 40kV to 1kV. Solutions to the problem of designing a fault-tolerant system which presents no danger to the flat-top converters are described in the paper. The adopted methods make use of hybrid ignitron/mechanical switches to give the required combination of switching speed and current carrying capacity, together with careful attention to the circuit layout of different switching elements. (author)

  20. Soft switching PWM isolated boost converter for fuel cell application

    Energy Technology Data Exchange (ETDEWEB)

    Rezaei, M.; Adib, E. [Isfahan Univ. of Technology, Isfahan (Iran, Islamic Republic of)

    2009-07-01

    This presentation introduced a newly developed soft switching, isolated boost type converter for fuel cell applications. With a simple PWM control circuit, the converter achieves zero voltage switching the main switch. Since the auxiliary circuit is soft switched, the converter can operate at high powers which make it suitable for fuel cell applications. In particular, the converter is suitable for the interface of fuel cell and inverters because of its high voltage gain and isolation between input and output sources. In addition, the input current of the converter (current drained from the fuel cell) is almost constant since it is a boost type converter. The converter was analyzed and the simulation results validate the theoretical analysis.

  1. Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory

    Science.gov (United States)

    Ryu, Sungyeon; Kim, Seong Keun; Choi, Byung Joon

    2018-01-01

    To efficiently increase the capacity of resistive switching random-access memory (RRAM) while maintaining the same area, a vertical structure similar to a vertical NAND flash structure is needed. In addition, the sneak-path current through the half-selected neighboring memory cell should be mitigated by integrating a selector device with each RRAM cell. In this study, an integrated vertical-type RRAM cell and selector device was fabricated and characterized. Ta2O5 as the switching layer and TaOxNy as the selector layer were used to preliminarily study the feasibility of such an integrated device. To make the side contact of the bottom electrode with active layers, a thick Al2O3 insulating layer was placed between the Pt bottom electrode and the Ta2O5/TaOxNy stacks. Resistive switching phenomena were observed under relatively low currents (below 10 μA) in this vertical-type RRAM device. The TaOxNy layer acted as a nonlinear resistor with moderate nonlinearity. Its low-resistance-state and high-resistance-state were well retained up to 1000 s.

  2. Experimental Results from a Laser-Triggered, Gas-Insulated, Spark-Gap Switch

    Science.gov (United States)

    Camacho, J. F.; Ruden, E. L.; Domonkos, M. T.

    2017-10-01

    We are performing experiments on a laser-triggered spark-gap switch with the goal of studying the transition from photoionization to current conduction. The discharge of current through the switch is triggered by a focused 532-nm wavelength beam from a Q-switched Nd:YAG laser with a pulse duration of about 10 ns. The trigger pulse is delivered along the longitudinal axis of the switch, and the focal spot can be placed anywhere along the axis of the 5-mm, gas-insulated gap between the switch electrodes. The switch test bed is designed to support a variety of working gases (e.g., Ar, N2) over a range of pressures. Electrical and optical diagnostics are used to measure switch performance as a function of parameters such as charge voltage, trigger pulse energy, insulating gas pressure, and gas species. A Mach-Zehnder imaging interferometer system operating at 532 nm is being used to obtain interferograms of the discharge plasma in the switch. We are also developing a 1064-nm interferometry diagnostic in an attempt to measure plasma free electron and neutral gas density profiles simultaneously within the switch gap. Results from our most recent experiments will be presented.

  3. Reluctance motor employing superconducting magnetic flux switches

    International Nuclear Information System (INIS)

    Spyker, R.L.; Ruckstadter, E.J.

    1992-01-01

    This paper reports that superconducting flux switches controlling the magnetic flux in the poles of a motor will enable the implementation of a reluctance motor using one central single phase winding. A superconducting flux switch consists of a ring of superconducting material surrounding a ferromagnetic pole of the motor. When in the superconducting state the switch will block all magnetic flux attempting to flow in the ferromagnetic core. When switched to the normal state the superconducting switch will allow the magnetic flux to flow freely in that pole. By using one high turns-count coil as a flux generator, and selectively channeling flux among the various poles using the superconducting flux switch, 3-phase operation can be emulated with a single-hase central AC source. The motor will also operate when the flux generating coil is driven by a DC current, provided the magnetic flux switches see a continuously varying magnetic flux. Rotor rotation provides this varying flux due to the change in stator pole inductance it produces

  4. Measurement of resistance switching dynamics in copper sulfide memristor structures

    Science.gov (United States)

    McCreery, Kaitlin; Olson, Matthew; Teitsworth, Stephen

    Resistance switching materials are the subject of current research in large part for their potential to enable novel computing devices and architectures such as resistance random access memories and neuromorphic chips. A common feature of memristive structures is the hysteretic switching between high and low resistance states which is induced by the application of a sufficiently large electric field. Here, we describe a relatively simple wet chemistry process to fabricate Cu2 S / Cu memristive structures with Cu2 S film thickness ranging up to 150 micron. In this case, resistance switching is believed to be mediated by electromigration of Cu ions from the Cu substrate into the Cu2 S film. Hysteretic current-voltage curves are measured and reveal switching voltages of about 0.8 Volts with a relatively large variance and independent of film thickness. In order to gain insight into the dynamics and variability of the switching process, we have measured the time-dependent current response to voltage pulses of varying height and duration with a time resolution of 1 ns. The transient response consists of a deterministic RC component as well as stochastically varying abrupt current steps that occur within a few microseconds of the pulse application.

  5. Proceedings of the switched power workshop

    International Nuclear Information System (INIS)

    Fernow, R.C.

    1988-01-01

    These proceedings contain most of the presentations given at a workshop on the current state of research in techniques for switched power acceleration. The proceedings are divided, as was the workshop itself, into two parts. Part 1, contains the latest results from a number of groups active in switched power research. The major topic here is a method for switching externally supplied power onto a transmission line. Advocates for vacuum photodiode switching, solid state switching, gas switching, and synthetic pulse generation are all presented. Other important areas of research described in this section concern: external electrical and laser pulsing systems; the properties of the created electromagnetic pulse; structures used for transporting the electromagnetic pulse to the region where the electron beam is located; and possible applications. Part 2 of the proceedings considers the problem of designing a high brightness electron gun using switched power as the power source. This is an important first step in demonstrating the usefulness of switched power techniques for accelerator physics. In addition such a gun could have immediate practical importance for advanced acceleration studies since the brightness could exceed that of present sources by several orders of magnitude. I would like to take this opportunity to thank Kathleen Tuohy and Patricia Tuttle for their assistance in organizing and running the workshop. Their tireless efforts contribute greatly to a very productive meeting

  6. Intrinsic nanofilamentation in resistive switching

    KAUST Repository

    Wu, Xing

    2013-03-15

    Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

  7. Note: Cryogenic heat switch with stepper motor actuator

    Energy Technology Data Exchange (ETDEWEB)

    Melcher, B. S., E-mail: bsmelche@syr.edu; Timbie, P. T., E-mail: pttimbie@wisc.edu [Department of Physics, University of Wisconsin, Madison, Wisconsin 53706 (United States)

    2015-12-15

    A mechanical cryogenic heat switch has been developed using a commercially available stepper motor and control electronics. The motor requires 4 leads, each carrying a maximum, pulsed current of 0.5 A. With slight modifications of the stepper motor, the switch functions reliably in vacuum at temperatures between 300 K and 4 K. The switch generates a clamping force of 262 N at room temperature. At 4 K it achieves an “on state” thermal conductance of 5.04 mW/K and no conductance in the “off state.” The switch is optimized for cycling an adiabatic demagnetization refrigerator.

  8. Launched electrons in plasma opening switches

    International Nuclear Information System (INIS)

    Mendel, C.W. Jr.; Rochau, G.E.; Sweeney, M.A.; McDaniel, D.H.; Quintenz, J.P.; Savage, M.E.; Lindman, E.L.; Kindel, J.M.

    1989-01-01

    Plasma opening switches have provided a means to improve the characteristics of super-power pulse generators. Recent advances involving plasma control with fast and slow magnetic fields have made these switches more versatile, allowing for improved switch uniformity, triggering, and opening current levels that are set by the level of auxiliary fields. Such switches necessarily involve breaks in the translational symmetry of the transmission line geometry and therefore affect the electron flow characteristics of the line. These symmetry breaks are the result of high electric field regions caused by plasma conductors remaining in the transmission line, ion beams crossing the line, or auxilliary magnetic field regions. Symmetry breaks cause the canonical momentum of the electrons to change, thereby moving them away from the cathode. Additional electrons are pulled from the cathode into the magnetically insulated flow, resulting in an excess of electron flow over that expected for the voltage and line current downstream of the switch. We call these electrons ''launched electrons''. Unless they are recaptured at the cathode or else are fed into the load and used beneficially, they cause a large power loss downstream. This paper will show examples of SuperMite and PBFA II data showing these losses, explain the tools we are using to study them, and discuss the mechanisms we will employ to mitigate the problem. The losses will be reduced primarily by reducing the amount of launched electron flow. 7 refs., 9 figs

  9. Electrolysis of an acidic NaCl solution with a graphite anode : IV. Chlorine evolution at a graphite electrode after switching off current

    NARCIS (Netherlands)

    Janssen, L.J.J.; Hoogland, J.G.

    1970-01-01

    During electrolysis of an acid chloride soln., at. Cl is taken up by a graphite anode. After switching off the current, the evolution of mol. Cl continues. This phenomenon is designated as residual gas evolution (RGE). The mol. Cl is formed according to the Volmer-Heyrovsky mechanism, Clads + e ->

  10. Subnanosecond, high-voltage photoconductive switching in GaAs

    Science.gov (United States)

    Druce, Robert L.; Pocha, Michael D.; Griffin, Kenneth L.; O'Bannon, Jim

    1991-03-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating highpower microwaves (HPM) and for high reprate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanchelike mode (the optical pulse only controls switch closing) . Operating in the unear mode we have observed switch closing times of less than 200 Ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lockon modes high fields are switched with lower laser pulse energies resulting in higher efficiencies but with measurable switching delay and jitter. We are currently investigating both large area (1 cm2) and small area 1 mm2) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1. 06 tim.

  11. Investigation on Capacitor Switching Transient Limiter with a Three phase Variable Resistance

    DEFF Research Database (Denmark)

    Naderi, Seyed Behzad; Jafari, Mehdi; Zandnia, Amir

    2017-01-01

    In this paper, a capacitor switching transient limiter based on a three phase variable resistance is proposed. The proposed structure eliminates the capacitor switching transient current and over-voltage by introducing a variable resistance to the current path with its special switching pattern...... transients on capacitor after bypassing. Analytic Analyses for this structure in transient cases are presented in details and simulations are performed by MATLAB software to prove its effectiveness....

  12. Characterization and switching performance of electron-beam controlled discharges

    International Nuclear Information System (INIS)

    Lowry, J.F.; Kline, L.E.; Heberlein, J.V.R.

    1986-01-01

    The electron-beam sustained discharge switch is an attractive concept for repetitive pulsed power switching because it has a demonstrated capability to interrupt direct current and because it is inherently scalable. The authors report on experiments with this type of switch in a 4-kV dc circuit. A wire-ion-plasma (WIP) electron-beam (e-beam) gun is used to irradiate and sustain a switch discharge with a 100-cm/sup 2/ cross-sectional area in l atm of N/sub 2/ or CH/sub 4/. Interruption of 8-10-μs pulses of up to 1.9 kA, and of 100-μs pulses of 150 A has been demonstrated in methane, and interruption against higher recovery voltages (11 kV) has been performed at 1.2 kA by adding series inductance to the circuit. These values represent power supply limitations rather than limitations of the switch itself. A comparison of the measured discharge characteristics with theoretical predictions shows that the measured switch conductivities are higher than the predicted values for given e-beam current values. A qualitative explanation for this observation is offered by considering the effects of electron reflection from the discharge anode and of nonlinear paths for the beam electrons across the discharge gap. The authors conclude that the switching performance of the e-beam controlled discharge switch corresponds to its design parameters, and that for a given switch size a lower voltage drop during the on time can be expected compared with the voltage drop predicted by previously published theory

  13. Fixed switching frequency applied in single-phase boost AC to DC converter

    International Nuclear Information System (INIS)

    Chen, T.-C.; Ren, T.-J.; Ou, J.-C.

    2009-01-01

    The fixed switching frequency control for a single-phase boost AC to DC converter to achieve a sinusoidal line current and unity power factor is proposed in this paper. The relation between the line current error and the fixed switching frequency was developed. For a limit line current error, the minimum switching frequency for a boost AC to DC converter can be achieved. The proposed scheme was implemented using a 32-bit digital signal processor TMS320C32. Simulations and experimental results demonstrate the feasibility and fast dynamic response of the proposed control strategy.

  14. A solid-state dielectric elastomer switch for soft logic

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Nixon [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); Slipher, Geoffrey A., E-mail: geoffrey.a.slipher.civ@mail.mil; Mrozek, Randy A. [U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States); O' Brien, Benjamin M. [StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Anderson, Iain A. [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Department of Engineering Science, School of Engineering, The University of Auckland, Level 3, 70 Symonds Street, Auckland 1010 (New Zealand)

    2016-03-07

    In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

  15. A solid-state dielectric elastomer switch for soft logic

    International Nuclear Information System (INIS)

    Chau, Nixon; Slipher, Geoffrey A.; Mrozek, Randy A.; O'Brien, Benjamin M.; Anderson, Iain A.

    2016-01-01

    In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

  16. A/B Testing in Improving Conversion on a Website : Case: Sanoma Entertainment Oy

    OpenAIRE

    Arento, Thomas

    2010-01-01

    The purpose of this thesis is to study marketing possibilities of improved conversion rates on websites. The study was made for Sanoma Entertainment Oy’s Gaming & Online unit. The main objective was to explore A/B testing as a tool to improve conversion rates by increasing click-through rates. The secondary objective was to test Google Website Optimizer as an A/B testing tool in comparison to current methods of A/B testing in Sanoma Entertainment Oy. The results of this study will be used as ...

  17. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    International Nuclear Information System (INIS)

    Lin, Chun-Cheng; Tang, Jian-Fu; Su, Hsiu-Hsien; Hong, Cheng-Shong; Huang, Chih-Yu; Chu, Sheng-Yuan

    2016-01-01

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li 0.06 Zn 0.94 O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li + ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  18. CONTROL OF BOUNCING IN RF MEMS SWITCHES USING DOUBLE ELECTRODE

    KAUST Repository

    Abdul Rahim, Farhan

    2014-05-01

    MEMS based mechanical switches are seen to be the likely replacements for CMOS based switches due to the several advantages that these mechanical switches have over CMOS switches. Mechanical switches can be used in systems under extreme conditions and also provide more reliability and cause less power loss. A major problem with mechanical switches is bouncing. Bouncing is an undesirable characteristic which increases the switching time and causes damage to the switch structure affecting the overall switch life. This thesis proposes a new switch design that may be used to mitigate bouncing by using two voltage sources using a double electrode configuration. The effect of many switch’s tunable parameters is also discussed and an effective tuning technique is also provided. The results are compared to the current control schemes in literature and show that the double electrode scheme is a viable control option.

  19. Control and Interference in Task Switching--A Review

    Science.gov (United States)

    Kiesel, Andrea; Steinhauser, Marco; Wendt, Mike; Falkenstein, Michael; Jost, Kerstin; Philipp, Andrea M.; Koch, Iring

    2010-01-01

    The task-switching paradigm offers enormous possibilities to study cognitive control as well as task interference. The current review provides an overview of recent research on both topics. First, we review different experimental approaches to task switching, such as comparing mixed-task blocks with single-task blocks, predictable task-switching…

  20. A soft switching with reduced voltage stress ZVT-PWM full-bridge converter

    Science.gov (United States)

    Sahin, Yakup; Ting, Naim Suleyman; Acar, Fatih

    2018-04-01

    This paper introduces a novel active snubber cell for soft switching pulse width modulation DC-DC converters. In the proposed converter, the main switch is turned on under zero voltage transition and turned off under zero voltage switching (ZVS). The auxiliary switch is turned on under zero current switching (ZCS) and turned off under zero current transition. The main diode is turned on under ZVS and turned off under ZCS. All of the other semiconductors in the converter are turned on and off with soft switching. There is no extra voltage stress on the semiconductor devices. Besides, the proposed converter has simple structure and ease of control due to common ground. The detailed theoretical analysis of the proposed converter is presented and also verified with both simulation and experimental study at 100 kHz switching frequency and 600 W output power. Furthermore, the efficiency of the proposed converter is 95.7% at nominal power.

  1. An experimental mechanical switch for 3 kA driven by superconducting coils

    International Nuclear Information System (INIS)

    Herman, H.J.; Ten Haken, B.; Van de Klundert, L.J.M.

    1986-01-01

    Usually mechanical switches that are built for use in superconducting circuits are driven in some way by a rod which is controlled at room temperature. In this paper, an alternative method to drive the electrodes of the switch is reported. In fact the new device is a superconducting relay that uses an antiseries connection of two superconducting air-core coils. The repulsing force of these relay coils enables the switch to be closed by applying a pressure to the electrodes. The off-state is effected by a set of springs which interrupt the electrodes when the coil current is switched off. We realized that this electro-magnetic method of producing large forces could be promising for driving a mechanical switch. The desired method was demonstrated by an experimental model. A switch-on resistance of 8*10 -8 Ω with a switch current of 3 kA and a contact force of 20 kN was measured

  2. High current, high bandwidth laser diode current driver

    Science.gov (United States)

    Copeland, David J.; Zimmerman, Robert K., Jr.

    1991-01-01

    A laser diode current driver has been developed for free space laser communications. The driver provides 300 mA peak modulation current and exhibits an optical risetime of less than 400 ps. The current and optical pulses are well behaved and show minimal ringing. The driver is well suited for QPPM modulation at data rates up to 440 Mbit/s. Much previous work has championed current steering circuits; in contrast, the present driver is a single-ended on/off switch. This results in twice the power efficiency as a current steering driver. The driver electrical efficiency for QPPM data is 34 percent. The high speed switch is realized with a Ku-band GaAsFET transistor, with a suitable pre-drive circuit, on a hybrid microcircuit adjacent to the laser diode.

  3. Effect of unlabelled monoclonal antibody (MoAb) on biodistribution of /sup 111/Indium labelled (MoAb)

    Energy Technology Data Exchange (ETDEWEB)

    Lamki, L M; Murray, J L; Rosenblum, M G; Patt, Y Z; Babaian, Richard; Unger, M W

    1988-08-01

    We have evaluated immunoscintigraphy in cancer patients using four /sup 111/In-labelled murine monoclonal antibodies (MoAb): 96.5 (anti-P97 of melanoma), ZME-018 (anti-high molecular weight antibody of melanoma), ZCE-025 (anti-CEA for colon cancer) and PAY-276 (anti-prostatic acid phosphatase for prostatic cancer). The effect of increasing the doses of unlabelled MoAb (co-infused with 1 mg labelled MoAb) on the relative body distribution of each labelled MoAb was assessed. Localization in the liver decreased significantly in all cases, with increasing MoAb dose, except for ZME-018. Localization in other organs increased significantly as the liver activity decreased. The spleen activity, however, fell in the case of MoAb ZME-018. Blood-pool activity increased with MoAb dose in all four MoAbs. These findings correlated with the rise in the detection rate of metastases, the plasma half-life, and other pharmacokinetic parameters. However, the dose level at which this correlation occurred varied with each antibody. These data demonstrate the co-infusion of unlabelled MoAb with /sup 111/In-labelled MoAb could alter the organ distribution, pharmacokinetics and tumour uptake in a favourable manner, though the degree to which this occurs depends on the antibody in question.

  4. AB Levitator and Electricity Storage

    OpenAIRE

    Bolonkin, Alexander

    2007-01-01

    The author researched this new idea - support of flight by any aerial vehicles at significant altitude solely by the magnetic field of the planet. It is shown that current technology allows humans to create a light propulsion (AB engine) which does not depend on air, water or ground terrain. Simultaniosly, this revolutionary thruster is a device for the storage of electricity which is extracted and is replenished (during braking) from/into the storage with 100 percent efficiency. The relative...

  5. Particle in cell simulation of peaking switch for breakdown evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Umbarkar, Sachin B.; Bindu, S.; Mangalvedekar, H.A.; Saxena, A.; Singh, N.M., E-mail: sachin.b.umbarkar@gmail.com [Department of Electric Engineering, Veermata Jijabai Technological Institute, Mumbai (India); Sharma, Archana; Saroj, P.C.; Mittal, K.C. [Accelerator Pulse Power Division, Bhabha Atomic Research Centre, Mumbai (India)

    2014-07-01

    Marx generator connected to peaking capacitor and peaking switch can generate Ultra-Wideband (UWB) radiation. A new peaking switch is designed for converting the existing nanosecond Marx generator to a UWB source. The paper explains the particle in cell (PIC) simulation for this peaking switch, using MAGIC 3D software. This peaking switch electrode is made up of copper tungsten material and is fixed inside the hermitically sealed derlin material. The switch can withstand a gas pressure up to 13.5 kg/cm{sup 2}. The lower electrode of the switch is connected to the last stage of the Marx generator. Initially Marx generator (without peaking stage) in air; gives the output pulse with peak amplitude of 113.75 kV and pulse rise time of 25 ns. Thus, we design a new peaking switch to improve the rise time of output pulse and to pressurize this peaking switch separately (i.e. Marx and peaking switch is at different pressure). The PIC simulation gives the particle charge density, current density, E counter plot, emitted electron current, and particle energy along the axis of gap between electrodes. The charge injection and electric field dependence on ionic dissociation phenomenon are briefly analyzed using this simulation. The model is simulated with different gases (N{sub 2}, H{sub 2}, and Air) under different pressure (2 kg/cm{sup 2}, 5 kg/cm{sup 2}, 10 kg/cm{sup 2}). (author)

  6. High-current railgap studies

    Science.gov (United States)

    Druce, R.; Gordon, L.; Hofer, W.; Wilson, M.

    1983-06-01

    Characteristics of a 40-kV, 750-kA, multichannel rail gap are presented. The gap is a three electrode, field distortion triggered design, with a total switch inductance of less than 10 nH. At maximum ratings, the gap typically switches 10 C per shot, at 700 kA, with a jitter of less than 2 ns. Channel evolution and current division were studied on image converter streak photographs. Transient gas pressure measurements were made to investigate the arc generated shocks and to detect single channel failure. Channel current sharing and simultaneity are described and their effects on the switch inductance in the channel current sharing and erosion measurements are discussed.

  7. Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.

    Science.gov (United States)

    Cong, G W; Matsukawa, T; Chiba, T; Tadokoro, H; Yanagihara, M; Ohno, M; Kawashima, H; Kuwatsuka, H; Igarashi, Y; Masahara, M; Ishikawa, H

    2013-03-25

    n-channel body-tied partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated for large current applications on a silicon-on-insulator wafer with photonics-oriented specifications. The MOSFET can drive an electrical current as large as 20 mA. We monolithically integrated this MOSFET with a 2 × 2 Mach-Zehnder interferometer optical switch having thermo-optic phase shifters. The static and dynamic performances of the integrated device are experimentally evaluated.

  8. Identification of Bacillus thuringiensis Cry1AbMod binding-proteins from Spodoptera frugiperda.

    Science.gov (United States)

    Martínez de Castro, Diana L; García-Gómez, Blanca I; Gómez, Isabel; Bravo, Alejandra; Soberón, Mario

    2017-12-01

    Bacillus thuringiensis Cry toxins are currently used for pest control in transgenic crops but evolution of resistance by the insect pests threatens the use of this technology. The Cry1AbMod toxin was engineered to lack the alpha helix-1 of the parental Cry1Ab toxin and was shown to counter resistance to Cry1Ab and Cry1Ac toxins in different insect species including the fall armyworm Spodoptera frugiperda. In addition, Cry1AbMod showed enhanced toxicity to Cry1Ab-susceptible S. frugiperda populations. To gain insights into the mechanisms of this Cry1AbMod-enhanced toxicity, we isolated the Cry1AbMod toxin binding proteins from S. frugiperda brush border membrane vesicles (BBMV), which were identified by pull-down assay and liquid chromatography-tandem mass spectrometry (LC-MS/MS). The LC-MS/MS results indicated that Cry1AbMod toxin could bind to four classes of aminopeptidase (N1, N3, N4 y N5) and actin, with the highest amino acid sequence coverage acquired for APN 1 and APN4. In addition to these proteins, we found other proteins not previously described as Cry toxin binding proteins. This is the first report that suggests the interaction between Cry1AbMod and APN in S. frugiperda. Copyright © 2017 Elsevier Inc. All rights reserved.

  9. Homology of ab1 and ab3 monoclonal antibodies that neutralize Semliki Forest virus

    NARCIS (Netherlands)

    Fernandez, IM; Bos, NA; Harmsen, M; Verheul, AFM; Snippe, H; Kraaijeveld, CA

    2001-01-01

    A noninternal image monoclonal antiidiotypic antibody (ab2 mAb), designated 1,13A321, that had proved its efficacy as vaccine against infection with Semliki Forest virus (SFV) in BALB/c mice, was used as immunogen to generate a panel of SFV-neutralizing monoclonal anti-anti-idiotypic antibodies (ab3

  10. Subnanosecond, high voltage photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L. (Lawrence Livermore National Lab., CA (USA)); O' Bannon, B.J. (Rockwell International Corp., Anaheim, CA (USA))

    1990-01-01

    We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

  11. Diode laser surgery. Ab interno and ab externo versus conventional surgery in rabbits.

    Science.gov (United States)

    Karp, C L; Higginbotham, E J; Edward, D P; Musch, D C

    1993-10-01

    Fibroblastic proliferation of subconjunctival tissues remains a primary mechanism of failure in filtration surgery. Minimizing the surgical manipulation of episcleral tissues may reduce scarring. Laser sclerostomy surgery involves minimal tissue dissection, and is gaining attention as a method of potentially improving filter duration in high-risk cases. Twenty-five New Zealand rabbits underwent filtration surgery in one eye, and the fellow eye remained as the unoperated control. Ten rabbits underwent ab externo diode laser sclerostomy surgery, ten underwent ab interno diode sclerostomy surgery, and five had posterior sclerostomy procedures. Filtration failure was defined as a less-than-4-mmHg intraocular pressure (IOP) difference between the operative and control eyes. The mean time to failure for the ab externo, ab interno, and conventional posterior sclerostomy techniques measured 17.4 +/- 11.5, 13.1 +/- 6.7, and 6.0 +/- 3.1 days, respectively. In a comparison of the laser-treated groups with the conventional procedure, the time to failure was significantly longer (P = 0.02) for the ab externo filter. The mean ab interno sclerostomy duration was longer than the posterior lip procedure, but this difference was not statistically significant (P = 0.15). The overall level of IOP reduction was similar in the three groups. These data suggest that diode laser sclerostomy is a feasible technique in rabbits, and the ab externo approach resulted in longer filter duration than the conventional posterior lip procedure in this model.

  12. Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chun-Cheng [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan (China); Tang, Jian-Fu; Su, Hsiu-Hsien [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Hong, Cheng-Shong; Huang, Chih-Yu [Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan (China)

    2016-06-28

    The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

  13. Pulsed power opening switch research at the University of New Mexico

    International Nuclear Information System (INIS)

    Humphries, S. Jr.

    1987-01-01

    Opening switch research at the University of New Mexico (UNM) is directed toward moderate-current (--10 kA) devices with potential applications to high-power charged particle accelerators. Two devices with the capacity for controlling gigawatt high-voltage circuits, the grid-controlled plasma flow switch and the scanned-beam switch, are under investigation. Both switches are conceptually simple; they involve little collective physics and are within the capabilities of current technology. In the plasma flow switch, the flux of electrons into a high-voltage power gap is controlled by a low-voltage control grid. Plasma generation is external to, and independent of, the power circuit. In the closed phase, plasma fills the gap so that the switch has a low on-state impedance. Pulse repetition rates in the megahertz range should be feasible. In single-shot proof-of-principle experiments, a small area switch modulated a 3-MW circuit; a 20-ns opening time was observed. The scanned-beam switch will utilize electric field deflection to direct the power of a sheet electron beam. The beam is to be alternately scanned to two inverse diodes connected to output transmission lines. The switch is expected to generate continuous-wave pulse trains for applications such as high-frequency induction linacs. Theoretical studies indicate that 10-GW devices in the 100-MHz range with 70-percent efficiency should be technologically feasible

  14. Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain—source current correction method

    International Nuclear Information System (INIS)

    Pongthavornkamol Tiwat; Pang Lei; Yuan Ting-Ting; Liu Xin-Yu

    2014-01-01

    A new modified Angelov current—voltage characteristic model equation is proposed to improve the drain—source current (I ds ) simulation of an AlGaN/GaN-based (gallium nitride) high electron mobility transistor (AlGaN/GaN-based HEMT) at high power operation. Since an accurate radio frequency (RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of AlGaN/GaN high electron mobility transistor (HEMT) nonlinear large-signal model extraction with a supplemental modeling of RF drain—source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency (PAE) at class-AB quiescent bias of V gs = −3.5 V, V ds = 30 V with a frequency of 9.6 GHz are presented. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Studies on resistive switching times in NiO thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Misra, P; Sahu, V K; Ajimsha, R S; Das, A K; Singh, B

    2017-01-01

    The resistive switching dynamics of NiO thin films in Au/NiO/Pt device configuration have been investigated to measure the switching times of set and reset events and their dependence on compliance current and switching voltages. The set switching time was found to be ∼10 ns at the set voltage of ∼1.8 V, while reset switching time was much longer ∼150 µ s at reset voltage of 0.8 V. With increasing compliance current from 5 to 75 mA during set process, although the resistance contrast of two states improved due to the decrease in the resistance of the low resistance state, the reset switching time increased substantially up to ∼3 ms while set time remained nearly unchanged. The fast reset switching time of ∼27 ns, comparable to that of set switching time, was achieved by applying a higher reset voltage of ∼1.2 V. The observed dependence of reset time on compliance current and reset voltage in NiO thin films was explained in light of the conducting filamentary model in which reset process is of thermal nature and involves dissolution of conducting filaments as a consequence of Joule heating generated by the reset current. (paper)

  16. Effect of resistance feedback on spin torque-induced switching of nanomagnets

    International Nuclear Information System (INIS)

    Garzon, Samir; Webb, Richard A.; Covington, Mark; Kaka, Shehzaad; Crawford, Thomas M.

    2009-01-01

    In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of magnetic tunnel junctions, and show that magnetization switching is only affected by capacitive shunting in the pF range.

  17. A Cell-to-Cell Battery Equalizer With Zero-Current Switching and Zero-Voltage Gap Based on Quasi-Resonant LC Converter and Boost Converter

    DEFF Research Database (Denmark)

    Shang, Yunlong; Zhang, Chenghui; Cui, Naxin

    2015-01-01

    these difficulties, an innovative direct cell-to-cell battery equalizer based on quasi-resonant LC converter (QRLCC) and boost DC-DC converter (BDDC) is proposed. The QRLCC is employed to gain zero-current switching (ZCS), leading to a reduction of power losses. The BDDC is employed to enhance the equalization...

  18. Nanoelectromechanical switch operating by tunneling of an entire C-60 molecule

    DEFF Research Database (Denmark)

    Danilov, Andrey V.; Hedegård, Per; Golubev, Dimitrii S.

    2008-01-01

    (i) the relative contribution of tunneling, current induced heating and thermal fluctuations to the switching mechanism, (ii) the voltage dependent energy barrier (similar to 100-200 meV) separating the two states of the switch and (iii) the switching attempt frequency, omega(0) corresponding to a 2......We present a solid state single molecule electronic device where switching between two states with different conductance happens predominantly by tunneling of an entire C-60 molecule. This conclusion is based on a novel statistical analysis of similar to 10(5) switching events. The analysis yields...

  19. Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Aurelio, D.; Torres, L.; Finocchio, G.

    2009-01-01

    This paper presents a numerical study of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). The current density distribution throughout the free-layer is computed dynamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main hypothesis, which states that the current flows perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry to the switching process. Furthermore, we observe that the reversal mechanisms are characterized by well-defined localized pre-switching oscillation modes.

  20. Micro optical fiber display switch based on the magnetohydrodynamic (MHD) principle

    Science.gov (United States)

    Lian, Kun; Heng, Khee-Hang

    2001-09-01

    This paper reports on a research effort to design, microfabricate and test an optical fiber display switch based on magneto hydrodynamic (MHD) principal. The switch is driven by the Lorentz force and can be used to turn on/off the light. The SU-8 photoresist and UV light source were used for prototype fabrication in order to lower the cost. With a magnetic field supplied by an external permanent magnet, and a plus electrical current supplied across the two inert sidewall electrodes, the distributed body force generated will produce a pressure difference on the fluid mercury in the switch chamber. By change the direction of current flow, the mercury can turn on or cut off the light pass in less than 10 ms. The major advantages of a MHD-based micro-switch are that it does not contain any solid moving parts and power consumption is much smaller comparing to the relay type switches. This switch can be manufactured by molding gin batch production and may have potential applications in extremely bright traffic control,, high intensity advertising display, and communication.

  1. High-current railgap studies

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.; Gordon, L.; Hofer, W.; Wilson, M.

    1983-06-03

    Characteristics of a 40-kV, 750-kA, multichannel rail gap are presented. The gap is a three electrode, field-distortion-triggered design, with a total switch inductance of less than 10 nH. At maximum ratings, the gap typically switches 10 C per shot, at 700 kA, with a jitter of less than 2 ns. Image-converter streak photographs were used to study channel evolution and current division. Transient gas-pressure measurements were made to investigate the arc generated shocks and to detect single channel failure. Channel current sharing and simultaneity are described and their effects on the switch inductance and lifetime are discussed. Lifetime tests of the rail gap were performed. Degradation in the channel current-sharing and erosion measurements are discussed.

  2. An accurate low current measurement circuit for heavy iron beam current monitor

    International Nuclear Information System (INIS)

    Zhou Chaoyang; Su Hong; Mao Ruishi; Dong Chengfu; Qian Yi; Kong Jie

    2012-01-01

    Heavy-ion beams at 10 6 particles per second have been applied to the treatment of deep-seated inoperable tumors in the therapy terminal of the Heavy Ion Research Facility in Lanzhou (HIRFL) which is located at the Institute of Modern Physics, Chinese Academy of Sciences (IMP, CAS). An accurate low current measurement circuit following a Faraday cup was developed to monitor the beam current at pA range. The circuit consisted of a picoammeter with a bandwidth of 1 kHz and a gated integrator (GI). A low input bias current precision amplifier and new guarding and shielding techniques were used in the picoammeter circuit which allowed as to measure current less than 1 pA with a current gain of 0.22 V/pA and noise less than 10 fA. This paper will also describe a novel compensation approach which reduced the charge injection from switches in the GI to 10 −18 C, and a T-switch configuration which was used to eliminate leakage current in the reset switch.

  3. The Aurora accelerator's triggered oil switch

    International Nuclear Information System (INIS)

    Weidenheimer, D.M.; Pereira, N.R.; Judy, D.C.; Stricklett, K.L.

    1993-01-01

    Achieving a radiation pulse with 15 ns risetime using all four of the Aurora accelerator's Blumlein pulse-forming lines demands synchronization of the Blumleins to within 10 ns (in addition to a 15 ns risetime for a single line). Timing of each Blumlein is controlled by a triggered 12 MV oil switch. A smaller-than-customary trigger electrode makes the switching time more reproducible. Time-resolved photography of the oil arcs suggests that triggering occurs simultaneously around the sharp edge of the trigger electrode, perhaps with small deviations that grow into the most prominent arcs characteristically seen in open-shutter photographs. However, many smaller arcs that are usually overlooked in open-shutter pictures may contribute to current conduction in a closed switch

  4. Ab initio pseudopotential theory

    International Nuclear Information System (INIS)

    Yin, M.T.; Cohen, M.L.

    1982-01-01

    The ab initio norm-conserving pseudopotential is generated from a reference atomic configuration in which the pseudoatomic eigenvalues and wave functions outside the core region agree with the corresponding ab initio all-electron results within the density-functional formalism. This paper explains why such pseudopotentials accurately reproduce the all-electron results in both atoms and in multiatomic systems. In particular, a theorem is derived to demonstrate the energy- and perturbation-independent properties of ab initio pseudopotentials

  5. The Strategy of Inverter Seamless Mode Switching in Master-Slave Independent Micro-grid

    Directory of Open Access Journals (Sweden)

    Jiang Hanhong

    2018-01-01

    Full Text Available In order to realize the uninterruptible power supply in the master-slave independent micro-grid system, the micro-grid inverter needs to realize the mode switching of the grid-connection/grid-disconnection. How to reduce the transient oscillation during switching, so as to effectively achieve seamless mode switching is a key issue to be solved. In this paper, a typical master-slave control independent micro-grid is used as an example, the strategy of mode switching is improved in two aspects. On the one hand, the state-following algorithm is adopted to improve the switching strategy of the outer loop. On the other hand, the current inner loop is taken by the H∞ robust controller to improve the robustness of the controller. Compared with the traditional PI control mode switching, this paper illustrates the feasibility of the proposed strategy through the simulation and experiment verification. The improvement strategy in this paper can effectively reduce the voltage and current oscillation during mode switching.

  6. Modeling of plasma flow switches at low, intermediate and high energies

    International Nuclear Information System (INIS)

    Bowers, R.L.; Brownell, J.H.; Greene, A.E.; Peterson, D.L.; Roderick, N.; Turchi, P.

    1992-01-01

    Inductively stored pulsed power technology has been used over the past thirty years to produce multi-megaamp currents to implode low inductance loads and produce x-radiation. Because of the large difference in timescales for the delivery of magnetic energy to the load and the desire for high power x-radiation output (short timescale for the implosion), most inductively stored systems require at least one opening switch. The design and understanding of fast, efficient opening switches for multi-megaamp systems represents a long standing problem in pulsed power research. The Los Alamos Foil Implosion Project uses inductively stored magnetic energy to implode thin metallic liners. A plasma flow switch (PFS) has been investigated as the final pulse shaping step for this systems. The PFS consists of a wire array and a barrier foil located upstream from the load region. Several stages can be identified in the performance of the plasma flow switch. These are: (1) the vaporization of the wire array; (2) the assembly of the initiated plasma on tie barrier foil to form the switch plasma; (3) the motion of the switch plasma down the coaxial barrel; and (4) current switching to the load (the actual switching stage). The fourth stage affects the switch's efficiency, as well as the quality of the load implosion. Instabilities may develop during any of these four stages, and their presence may seriously degrade the structure of the switch plasma. Two primary criteria may be used to characterize good switching. The first is switching efficiency. A second criterion is transferred to the load during or after switching. This paper summarizes the computational design of the PFS experiments carried out on Pegasus 1. We conclude by considering the implications of these results for the design of a PFS for the higher energy regime (Procyon) regime

  7. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in ``avalanche`` mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into ``avalanche`` mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

  8. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (< 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6--35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs.

  9. Subnanosecond photoconductive switching in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Druce, R.L.; Pocha, M.D.; Griffin, K.L.

    1990-01-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential of GaAs to act as a closing switch in avalanche'' mode at high fields. We have observed switch closing times of less than 200 psec with 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into an avalanche'' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large are (1 sq cm) and small area (<1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300--1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation. 3 refs., 11 figs.

  10. Subnanosecond photoconductive switching in GaAs

    Science.gov (United States)

    Druce, R. L.; Pocha, M. D.; Griffin, K. L.

    1991-04-01

    We are conducting research in photoconductive switching for the purpose of generating microwave pulses with amplitudes up to 50 kV. This technology has direct application to impulse radar and HPM sources. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as an on-off switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). In addition, we are exploring the potential GaAs to act as a closing switch in 'avalanche' mode at high fields. We have observed switch closing times of less than 200 psec with a 100 psec duration laser pulse and opening times of less than 400 psec with neutron irradiated GaAs at fields of tens of kV/cm. If the field is increased and the laser energy decreased, the laser can be used to trigger photoconductive switches into 'avalanche' mode of operation in which carrier multiplication occurs. This mode of operation is quite promising since the switches close in less than 1 nsec while realizing significant energy gain (ratio of electrical energy in the pulse to optical trigger energy). We are currently investigating both large area (1 sq cm) and small area (less than 1 sq mm) switches illuminated by GaAlAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 micrometers. Preliminary results indicate that the closing time of the avalanche switches depends primarily on the material properties of the devices with closing times of 300-1300 psec at voltages of 6-35 kV. We will present experimental results for linear, lock on, and avalanche mode operation of GaAs photoconductive switches and how these pulses may be applied to microwave generation.

  11. Social Media Marketing : CASE: OY SUOMEN LYYRA AB

    OpenAIRE

    Eriksson, Irene

    2012-01-01

    This bachelor thesis was commissioned by Oy Suomen Lyyra Ab, the largest student online media and student card producer for higher education students in Finland. The the-sis objective was to understanding the current social media situation and activity among the students of higher education in Finland, the social media networks that the case company currently uses as well as understanding how to use these networks for successful marketing activities. The quantitative research was conducted in...

  12. Design and advanced control of switched reluctance motor; Design og avanceret styring af switched reluctance motor

    Energy Technology Data Exchange (ETDEWEB)

    Blaabjerg, F.; Jensen, F.; Kierkegaard, P.; Pedersen, J.K.; Rasmussen, P.O.; Simonsen, L.

    1999-03-01

    The aim of the project is to design, construct and optimise the control of Switched Reluctance Motors with and without permanent magnets. The expectation was an increased efficiency and a decreased material consumption. The project included originally three types of SR-motors, two with a nominal number of revolutions of 3.000 rpm and one motor with a nominal number of revolutions of 50.000 rpm. The project was changed to focus on one motor with a nominal number of revolutions of 6.000 rpm, one with a nominal number of revolutions of 50.000 rpm and one two-phased low-voltage motor with a nominal number of revolutions of 2.000 rpm. The motors had different outputs of 2,7 kW, 0,9 kW and 3 kW, respectively. For this purpose an advanced simulation programme for Switched Reluctance Motors is developed. The programme differs from other programmes by being able to simulate multi-disciplinary such as vibrations and acoustic noise. It is even possible to play the sound. In this connection completely new models are developed. It is also possible to simulate different grid connected converters. Input to the simulation programme is finite element calculations, geometry of the motor and calculations or data from an advanced characterisation system for Switched Reluctance Motors. New methods to control the current in Switched Reluctance Motors are developed, which particularly make quick dynamics possible in a digitally controlled current without use of special noise filters. The method will soon have industrial use. Other new methods have emerged, which secure that the system all the time works with the maximum efficiency irrespective of load. In some cases an efficiency improvement of 10 % is obtained compared to a classic control of the Switched Reluctance Motor. (EHS) EFP-94; EFP-95; EFP-98. 16 refs.

  13. Implementation of Single Phase Soft Switched PFC Converter for Plug-in-Hybrid Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Aiswariya Sekar

    2015-11-01

    Full Text Available This paper presents a new soft switching boost converter with a passive snubber cell without additional active switches for battery charging systems. The proposed snubber finds its application in the front-end ac-dc converter of Plug-in Hybrid Electric Vehicle (PHEV battery chargers. The proposed auxiliary snubber circuit consists of an inductor, two capacitors and two diodes. The new converter has the advantages of continuous input current, low switching stresses, high voltage gain without extreme duty cycle, minimized charger size and charging time and fewer amounts of cost and electricity drawn from the utility at higher switching frequencies. The switch is made to turn ON by Zero Current Switching (ZCS and turn OFF by Zero Voltage Switching (ZVS. The detailed steady state analysis of the novel ac-dc Zero Current- Zero Voltage Switching (ZC-ZVS boost Power Factor Correction (PFC converter is presented with its operating principle. The experimental prototype of 20 kHz, 100 W converter verifies the theoretical analysis. The power factor of the prototype circuit reaches near unity with an efficiency of 97%, at nominal output power for a ±10% variation in the input voltage and ±20% variation in the snubber component values.

  14. Biosorption of Acid Blue 290 (AB 290) and Acid Blue 324 (AB 324) dyes on Spirogyra rhizopus

    International Nuclear Information System (INIS)

    Ozer, Ayla; Akkaya, Goenuel; Turabik, Meral

    2006-01-01

    In this study, the biosorption of Acid Blue 290 and Acid Blue 324 on Spirogyra rhizopus, a green algae growing on fresh water, was studied with respect to initial pH, temperature, initial dye concentration and biosorbent concentration. The optimum initial pH and temperature values for AB 290 and AB 324 biosorption were found to be 2.0, 30 deg. C and 3.0, 25 deg. C, respectively. It was observed that the adsorbed AB 290 and AB 324 amounts increased with increasing the initial dye concentration up to 1500 and 750 mg/L, respectively. The Langmuir, Freundlich, Redlich-Peterson and Koble-Corrigan isotherm models were applied to the experimental equilibrium data and the isotherm constants were determined by using Polymath 4.1 software. The monolayer coverage capacities of S. rhizopus for AB 290 and AB 324 dyes were found as 1356.6 mg/g and 367.0 mg/g, respectively. The intraparticle diffusion model and the pseudo-second order kinetic model were applied to the experimental data in order to describe the removal mechanism of these acidic dyes by S. rhizopus. The pseudo-second order kinetic model described very well the biosorption kinetics of AB 290 and AB 324 dyes. Thermodynamic studies showed that the biosorption of AB 290 and AB 324 on S. rhizopus was exothermic in nature

  15. High voltage disconnect switch position monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Crampton, S W

    1983-08-01

    Unreliable position indication on high-voltage (HV) disconnect switches can result in equipment damage worth many times the cost of a disconnect switch. The benefits and limitations of a number of possible methods of reliably monitoring HV disconnect switches are assessed. Several methods of powering active devices at HV are noted. It is concluded that the most reliable way of monitoring switch position at reasonable cost would use a passive hermetically-sealed blade-position sensor located at HV, with a fibre-optic link between HV and ground. Separate sensors would be used for open and closed position indication. For maximum reliability the fibre-optic link would continue into the relay building. A passive magnetically actuated fibre-optic sensor has been built which demonstrates the feasibility of the concept. The sensor monitors blade position relative to the jaws in three dimensions with high resolution. A design for an improved passive magneto-optic sensor has significantly lower optical losses, allowing a single fibre-optic loop and 3 sensors to monitor closure of all phases of a disconnect switch. A similar loop would monitor switch opening. The improved sensor has a solid copper housing to provide greater immunity to fault currents, and to protect it from the environment and from physical damage. Two methods of providing a protected path for fibre-optics passing from HV to ground are proposed, one using a hollow porcelain switch-support insulator and the other using an additional small-diameter polymer insulator with optical fibres imbedded in its fibreglass core. A number of improvements are recommended which can be made to existing switches to increase their reliability. 16 refs., 13 figs., 1 tab.

  16. Revealing strategies of quorum sensing in Azospirillum brasilense strains Ab-V5 and Ab-V6.

    Science.gov (United States)

    Fukami, Josiane; Abrantes, Julia Laura Fernandes; Del Cerro, Pablo; Nogueira, Marco Antonio; Ollero, Francisco Javier; Megías, Manuel; Hungria, Mariangela

    2018-01-01

    Azospirillum brasilense is an important plant-growth promoting bacterium (PGPB) that requires several critical steps for root colonization, including biofilm and exopolysaccharide (EPS) synthesis and cell motility. In several bacteria these mechanisms are mediated by quorum sensing (QS) systems that regulate the expression of specific genes mediated by the autoinducers N-acyl-homoserine lactones (AHLs). We investigated QS mechanisms in strains Ab-V5 and Ab-V6 of A. brasilense, which are broadly used in commercial inoculants in Brazil. Neither of these strains carries a luxI gene, but there are several luxR solos that might perceive AHL molecules. By adding external AHLs we verified that biofilm and EPS production and cell motility (swimming and swarming) were regulated via QS in Ab-V5, but not in Ab-V6. Differences were observed not only between strains, but also in the specificity of LuxR-type receptors to AHL molecules. However, Ab-V6 was outstanding in indole acetic acid (IAA) synthesis and this molecule might mimic AHL signals. We also applied the quorum quenching (QQ) strategy, obtaining transconjugants of Ab-V5 and Ab-V6 carrying a plasmid with acyl-homoserine lactonase. When maize (Zea mays L.) was inoculated with the wild-type and transconjugant strains, plant growth was decreased with the transconjugant of Ab-V5-confirming the importance of an AHL-mediated QS system-but did not affect plant growth promotion by Ab-V6.

  17. Energy reversible switching from amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.; Smith, Casey; Hussain, Muhammad Mustafa

    2013-01-01

    We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young's modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young's modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch. © 2013 IEEE.

  18. Energy reversible switching from amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.

    2013-08-01

    We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young\\'s modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young\\'s modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch. © 2013 IEEE.

  19. SiC MOSFET Switching Power Amplifier Project Summary

    Science.gov (United States)

    Miller, Kenneth E.; Ziemba, Timothy; Prager, James; Slobodov, Ilia; Henson, Alex

    2017-10-01

    Eagle Harbor Technologies has completed a Phase I/II program to develop SiC MOSFET based Switching Power Amplifiers (SPA) for precision magnet control in fusion science applications. During this program, EHT developed several units have been delivered to the Helicity Injected Torus (HIT) experiment at the University of Washington to drive both the voltage and flux circuits of the helicity injectors. These units are capable of switching 700 V at 100 kHz with an adjustable duty cycle from 10 - 90% and a combined total output current of 96 kA for 4 ms (at max current). The SPAs switching is controlled by the microcontroller at HIT, which adjusts the duty cycle to maintain a specific waveform in the injector. The SPAs include overcurrent and shoot-through protection circuity. EHT will present an overview of the program including final results for the SPA waveforms. With support of DOE SBIR.

  20. The Minimum Requirements of Language Control: Evidence from Sequential Predictability Effects in Language Switching

    Science.gov (United States)

    Declerck, Mathieu; Koch, Iring; Philipp, Andrea M.

    2015-01-01

    The current study systematically examined the influence of sequential predictability of languages and concepts on language switching. To this end, 2 language switching paradigms were combined. To measure language switching with a random sequence of languages and/or concepts, we used a language switching paradigm that implements visual cues and…

  1. Undoing Gender Through Legislation and Schooling: the Case of AB 537 and AB 394 IN California, USA

    Science.gov (United States)

    Knotts, Greg

    2009-11-01

    This article investigates California laws AB 537: The Student Safety and Violence Prevention Act of 2000, and the recently enacted AB 394: Safe Place to Learn Act. Both demand that gender identity and sexual orientation be added to the lexicon of anti-harassment protection in public education. However, despite these progressive measures, schools have an unconscious acceptance of heteronormativity and gendered norms, which undermines both the spirit and language of these laws. This paper examines how California schools can both change standard practices and realise the transformative social change that laws like AB 537 and AB 394 can instigate. I assert that the systemic implementation of these laws, through the adoption, enforcement and evaluation of existing AB 537 Task Force Recommendations, is necessary for their success. My second assertion is that AB 537 and AB 394 have the potential to change and reconstitute gender-based and heteronormative standards at school sites.

  2. Low-profile high-voltage compact gas switch

    International Nuclear Information System (INIS)

    Goerz, D.A.; Wilson, M.J.; Speer, R.D.

    1997-01-01

    This paper discusses the development and testing of a low-profile, high-voltage, spark-gap switch designed to be closely coupled with other components into an integrated high-energy pulsed-power source. The switch is designed to operate at 100 kV using SF6 gas pressurized to less than 0.7 MPa. The volume of the switch cavity region is less than 1.5 cm3, and the field stress along the gas-dielectric interface is as high as 130 kV/cm. The dielectric switch body has a low profile that is only I -cm tall at its greatest extent and nominally 2-mm thick over most of its area. This design achieves a very low inductance of less than 5 nH, but results in field stresses exceeding 500 kV/cm in the dielectric material. Field modeling was done to determine the appropriate shape for the highly stressed insulator and electrodes, and special manufacturing techniques were employed to mitigate the usual mechanisms that induce breakdown and failure in solid dielectrics. Static breakdown tests verified that the switch operates satisfactorily at 100 kV levels. The unit has been characterized with different shaped electrodes having nominal gap spacings of 2.0, 2.5, and 3.0 mm. The relationship between self-break voltage and operating pressure agrees well with published data on gas properties, accounting for the field enhancements of the electrode shapes being used. Capacitor discharge tests in a low inductance test fixture exhibited peak currents up to 25 kA with characteristic frequencies of the ringdown circuit ranging from 10 to 20 MHz. The ringdown waveforms and scaling of measured parameters agree well with circuit modeling of the switch and test fixture. Repetitive operation has been demonstrated at moderate rep-rates up to 15 Hz, limited by the power supply being used. Preliminary tests to evaluate lifetime of the compact switch assembly have been encouraging. In one case, after more than 7,000 high-current ringdown tests with approximately 30 C of total charge transferred, the

  3. Ab Initio Molecular-Dynamics Simulation of Neuromorphic Computing in Phase-Change Memory Materials.

    Science.gov (United States)

    Skelton, Jonathan M; Loke, Desmond; Lee, Taehoon; Elliott, Stephen R

    2015-07-08

    We present an in silico study of the neuromorphic-computing behavior of the prototypical phase-change material, Ge2Sb2Te5, using ab initio molecular-dynamics simulations. Stepwise changes in structural order in response to temperature pulses of varying length and duration are observed, and a good reproduction of the spike-timing-dependent plasticity observed in nanoelectronic synapses is demonstrated. Short above-melting pulses lead to instantaneous loss of structural and chemical order, followed by delayed partial recovery upon structural relaxation. We also investigate the link between structural order and electrical and optical properties. These results pave the way toward a first-principles understanding of phase-change physics beyond binary switching.

  4. Cell Culture Systems To Study Human Herpesvirus 6A/B Chromosomal Integration.

    Science.gov (United States)

    Gravel, Annie; Dubuc, Isabelle; Wallaschek, Nina; Gilbert-Girard, Shella; Collin, Vanessa; Hall-Sedlak, Ruth; Jerome, Keith R; Mori, Yasuko; Carbonneau, Julie; Boivin, Guy; Kaufer, Benedikt B; Flamand, Louis

    2017-07-15

    Human herpesviruses 6A/B (HHV-6A/B) can integrate their viral genomes in the telomeres of human chromosomes. The viral and cellular factors contributing to HHV-6A/B integration remain largely unknown, mostly due to the lack of efficient and reproducible cell culture models to study HHV-6A/B integration. In this study, we characterized the HHV-6A/B integration efficiencies in several human cell lines using two different approaches. First, after a short-term infection (5 h), cells were processed for single-cell cloning and analyzed for chromosomally integrated HHV-6A/B (ciHHV-6A/B). Second, cells were infected with HHV-6A/B and allowed to grow in bulk for 4 weeks or longer and then analyzed for the presence of ciHHV-6. Using quantitative PCR (qPCR), droplet digital PCR, and fluorescent in situ hybridization, we could demonstrate that HHV-6A/B integrated in most human cell lines tested, including telomerase-positive (HeLa, MCF-7, HCT-116, and HEK293T) and telomerase-negative cell lines (U2OS and GM847). Our results also indicate that inhibition of DNA replication, using phosphonoacetic acid, did not affect HHV-6A/B integration. Certain clones harboring ciHHV-6A/B spontaneously express viral genes and proteins. Treatment of cells with phorbol ester or histone deacetylase inhibitors triggered the expression of many viral genes, including U39 , U90 , and U100 , without the production of infectious virus, suggesting that the tested stimuli were not sufficient to trigger full reactivation. In summary, both integration models yielded comparable results and should enable the identification of viral and cellular factors contributing to HHV-6A/B integration and the screening of drugs influencing viral gene expression, as well as the release of infectious HHV-6A/B from the integrated state. IMPORTANCE The analysis and understanding of HHV-6A/B genome integration into host DNA is currently limited due to the lack of reproducible and efficient viral integration systems. In the

  5. Design and development of bipolar 4-quadrant switch-mode power converter for superconducting magnets

    International Nuclear Information System (INIS)

    Yashwant Kumar; Thakur, S.K.; Ghosh, M.K.; Tiwari, T.P.; De, Anirban; Kumari, S.; Saha, S.

    2011-01-01

    A uniform zero crossing magnetic field in a magnet can be achieved by using bipolar power converter with four quadrant operation. A high current bipolar switch-mode power converter (rated ±27 V max , ±7V flat top, ±300A, 100 ppm) has been designed and developed indigenously at VECC Kolkata. Four quadrants operation is accomplished by using power IGBTs in an H-bridge configuration with switching frequency around 20 kHz. The switch-mode power converter is used because of high dynamic response, low output ripple, high efficiency and low input current harmonics. In this paper, circuit topology, function of system components and key system specifications of high current bipolar switch mode power converter is discussed. (author)

  6. Theory of circuit block switch-off

    Directory of Open Access Journals (Sweden)

    S. Henzler

    2004-01-01

    Full Text Available Switching-off unused circuit blocks is a promising approach to supress static leakage currents in ultra deep sub-micron CMOS digital systems. Basic performance parameters of Circuit Block Switch-Off (CBSO schemes are defined and their dependence on basic circuit parameters is estimated. Therefore the design trade-off between strong leakage suppression in idle mode and adequate dynamic performance in active mode can be supported by simple analytic investigations. Additionally, a guideline for the estimation of the minimum time for which a block deactivation is useful is derived.

  7. A Switched-Capacitor Based High Conversion Ratio Converter for Renewable Energy Applications

    DEFF Research Database (Denmark)

    Li, Kerui; Yin, Zhijian; Yang, Yongheng

    2017-01-01

    A high step-up switched-capacitor based converter is proposed in this paper. The proposed converter features high conversion ratio, low voltage stress and continuous input current, which makes it very suitable for renewable energy applications like photovoltaic systems. More importantly...... voltage gain, low voltage stress on the switches, continuous input current, and relatively high efficiency....

  8. Modelling switching-time effects in high-frequency power conditioning networks

    Science.gov (United States)

    Owen, H. A.; Sloane, T. H.; Rimer, B. H.; Wilson, T. G.

    1979-01-01

    Power transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.

  9. Development of a switched integrator amplifier for high-accuracy optical measurements

    International Nuclear Information System (INIS)

    Mountford, John; Porrovecchio, Geiland; Smid, Marek; Smid, Radislav

    2008-01-01

    In the field of low flux optical measurements, the development and use of large area silicon detectors is becoming more frequent. The current/voltage conversion of their photocurrent presents a set of problems for traditional transimpedance amplifiers. The switched integration principle overcomes these limitations. We describe the development of a fully characterized current-voltage amplifier using the switched integrator technique. Two distinct systems have been developed in parallel at the United Kingdom's National Physical Laboratory (NPL) and Czech Metrology Institute (CMI) laboratories. We present the circuit theory and best practice in the design and construction of switched integrators. In conclusion the results achieved and future developments are discussed

  10. Development of a switched integrator amplifier for high-accuracy optical measurements.

    Science.gov (United States)

    Mountford, John; Porrovecchio, Geiland; Smid, Marek; Smid, Radislav

    2008-11-01

    In the field of low flux optical measurements, the development and use of large area silicon detectors is becoming more frequent. The current/voltage conversion of their photocurrent presents a set of problems for traditional transimpedance amplifiers. The switched integration principle overcomes these limitations. We describe the development of a fully characterized current-voltage amplifier using the switched integrator technique. Two distinct systems have been developed in parallel at the United Kingdom's National Physical Laboratory (NPL) and Czech Metrology Institute (CMI) laboratories. We present the circuit theory and best practice in the design and construction of switched integrators. In conclusion the results achieved and future developments are discussed.

  11. Recent advances in column switching sample preparation in bioanalysis.

    Science.gov (United States)

    Kataoka, Hiroyuki; Saito, Keita

    2012-04-01

    Column switching techniques, using two or more stationary phase columns, are useful for trace enrichment and online automated sample preparation. Target fractions from the first column are transferred online to a second column with different properties for further separation. Column switching techniques can be used to determine the analytes in a complex matrix by direct sample injection or by simple sample treatment. Online column switching sample preparation is usually performed in combination with HPLC or capillary electrophoresis. SPE or turbulent flow chromatography using a cartridge column and in-tube solid-phase microextraction using a capillary column have been developed for convenient column switching sample preparation. Furthermore, various micro-/nano-sample preparation devices using new polymer-coating materials have been developed to improve extraction efficiency. This review describes current developments and future trends in novel column switching sample preparation in bioanalysis, focusing on innovative column switching techniques using new extraction devices and materials.

  12. Interfacial behavior of resistive switching in ITO-PVK-Al WORM memory devices

    Science.gov (United States)

    Whitcher, T. J.; Woon, K. L.; Wong, W. S.; Chanlek, N.; Nakajima, H.; Saisopa, T.; Songsiriritthigul, P.

    2016-02-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current-voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK-Al interface.

  13. Analisys of Current-Bidirectional Buck-Boost Based Automotive Switch-Mode Audio Amplifier

    DEFF Research Database (Denmark)

    Bolten Maizonave, Gert; Andersen, Michael A. E.; Kjærgaard, Claus

    2011-01-01

    The following study was carried out in order to assess quantitatively the performance of the buck-boost converter when used as switch-mode audio amplifier. It comprises of, to begin with, the delimitation of design criteria based on the state-ofthe- art solution, which is based in a differential ...

  14. Synchronization Between Two Different Switched Chaotic Systems By Switching Control

    Directory of Open Access Journals (Sweden)

    Du Li Ming

    2016-01-01

    Full Text Available This paper is concerned with the synchronization problem of two different switched chaotic systems, considering the general case that the master-slave switched chaotic systems have uncertainties. Two basic problems are considered: one is projective synchronization of switched chaotic systems under arbitrary switching; the other is projective synchronization of switched chaotic systems by design of switching when synchronization cannot achieved by using any subsystems alone. For the two problems, common Lyapunov function method and multiple Lyapunov function method are used respectively, an adaptive control scheme has been presented, some sufficient synchronization conditions are attainted, and the switching signal is designed. Finally, the numerical simulation is provide to show the effectiveness of our method.

  15. Fast risetime BLT switches for accelerators applications

    International Nuclear Information System (INIS)

    Kirkman-Amemiya, G.; Reinhardt, N.; Choi, M.S.; Gundersen, M.A.

    1991-01-01

    Several particle accelerator systems require repetitive switches capable to switching peak currents of several kA with short risetimes, in particular kicker magnets used to transfer particle beams from one section of an accelerator to another require current pulses that rise from zero to 100% in a time determined by the separation between particle bunches which can be only 10's of nsec in some applications. One particular application is the injection and extraction kickers for the low energy booster (LEB) of the superconducting super collider (SSC) which requires < 50nsec 0-99% risetime. Another system with similarly strict risetime requirement is the kicker for the Stanford Linear Collider electron damping rings. In this work, a fast risetime BLT switch which has demonstrated 17kA at 30kV with < 60nsec risetime, 1.5kA at 20kV with < 18nsec risetime, and up to 240Hz operation at 20kV, 7kA is reported. A tetrode triggering method is described which reduces risetime by eliminating prepulse behavior

  16. Instantaneous Switching Processes in Quasi-Linear Circuits

    Directory of Open Access Journals (Sweden)

    Rositsa Angelova

    2004-01-01

    Full Text Available The paper considers instantaneous processes in electrical circuits produced by the stepwise change of the capacitance of the capacitor and the inductance of the inductor and by the switching on and switching off of the circuit. In order to determine the set of electrical circuits, for which it is possible to explicitly obtain the values of the currents and the voltages at the end of the instantaneous process, a classification of the networks with nonlinear elements is introduced in the paper. The instantaneous switching process in the moment t0 is approximated when T->t0 with a sequence of processes in the interval [t0, T]. For quasi-linear inductive and capacitive circuits; we present the type of the system satisfied by the currents and the voltages, the charges, as well as the fluxes in the interval [t0, T]. From this system, after passage to the limit T->t0, we obtain the formulas for the values of the circuits at the end of the instantaneous process. The obtained results are applied for the analysis of particular processes.

  17. Switched-mode converters (one quadrant)

    CERN Document Server

    Barrade, P

    2006-01-01

    Switched-mode converters are DC/DC converters that supply DC loads with a regulated output voltage, and protection against overcurrents and short circuits. These converters are generally fed from an AC network via a transformer and a conventional diode rectifier. Switched-mode converters (one quadrant) are non-reversible converters that allow the feeding of a DC load with unipolar voltage and current. The switched-mode converters presented in this contribution are classified into two families. The first is dedicated to the basic topologies of DC/DC converters, generally used for low- to mid-power applications. As such structures enable only hard commutation processes, the main drawback of such topologies is high commutation losses. A typical multichannel evolution is presented that allows an interesting decrease in these losses. Deduced from this direct DC/DC converter, an evolution is also presented that allows the integration of a transformer into the buck and the buck–boost structure. This enables an int...

  18. Exciter switch

    Science.gov (United States)

    Mcpeak, W. L.

    1975-01-01

    A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.

  19. AP calculus AB/BC

    CERN Document Server

    Schwartz, Stu

    2013-01-01

    All Access for the AP® Calculus AB & BC Exams Book + Web + Mobile Everything you need to prepare for the Advanced Placement® exam, in a study system built around you! There are many different ways to prepare for an Advanced Placement® exam. What's best for you depends on how much time you have to study and how comfortable you are with the subject matter. To score your highest, you need a system that can be customized to fit you: your schedule, your learning style, and your current level of knowledge. This book, and the free online tools that come with it, will help you personalize your AP® Cal

  20. Multistage switching hardware and software implementations for student experiment purpose

    Science.gov (United States)

    Sani, A.; Suherman

    2018-02-01

    Current communication and internet networks are underpinned by the switching technologies that interconnect one network to the others. Students’ understanding on networks rely on how they conver the theories. However, understanding theories without touching the reality may exert spots in the overall knowledge. This paper reports the progress of the multistage switching design and implementation for student laboratory activities. The hardware and software designs are based on three stages clos switching architecture with modular 2x2 switches, controlled by an arduino microcontroller. The designed modules can also be extended for batcher and bayan switch, and working on circuit and packet switching systems. The circuit analysis and simulation show that the blocking probability for each switch combinations can be obtained by generating random or patterned traffics. The mathematic model and simulation analysis shows 16.4% blocking probability differences as the traffic generation is uniform. The circuits design components and interfacing solution have been identified to allow next step implementation.

  1. Modular protein switches derived from antibody mimetic proteins.

    Science.gov (United States)

    Nicholes, N; Date, A; Beaujean, P; Hauk, P; Kanwar, M; Ostermeier, M

    2016-02-01

    Protein switches have potential applications as biosensors and selective protein therapeutics. Protein switches built by fusion of proteins with the prerequisite input and output functions are currently developed using an ad hoc process. A modular switch platform in which existing switches could be readily adapted to respond to any ligand would be advantageous. We investigated the feasibility of a modular protein switch platform based on fusions of the enzyme TEM-1 β-lactamase (BLA) with two different antibody mimetic proteins: designed ankyrin repeat proteins (DARPins) and monobodies. We created libraries of random insertions of the gene encoding BLA into genes encoding a DARPin or a monobody designed to bind maltose-binding protein (MBP). From these libraries, we used a genetic selection system for β-lactamase activity to identify genes that conferred MBP-dependent ampicillin resistance to Escherichia coli. Some of these selected genes encoded switch proteins whose enzymatic activity increased up to 14-fold in the presence of MBP. We next introduced mutations into the antibody mimetic domain of these switches that were known to cause binding to different ligands. To different degrees, introduction of the mutations resulted in switches with the desired specificity, illustrating the potential modularity of these platforms. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please e-mail: journals.permissions@oup.com.

  2. A Switched Capacitor Based AC/DC Resonant Converter for High Frequency AC Power Generation

    Directory of Open Access Journals (Sweden)

    Cuidong Xu

    2015-09-01

    Full Text Available A switched capacitor based AC-DC resonant power converter is proposed for high frequency power generation output conversion. This converter is suitable for small scale, high frequency wind power generation. It has a high conversion ratio to provide a step down from high voltage to low voltage for easy use. The voltage conversion ratio of conventional switched capacitor power converters is fixed to n, 1/n or −1/n (n is the switched capacitor cell. In this paper, A circuit which can provide n, 1/n and 2n/m of the voltage conversion ratio is presented (n is stepping up the switched capacitor cell, m is stepping down the switching capacitor cell. The conversion ratio can be changed greatly by using only two switches. A resonant tank is used to assist in zero current switching, and hence the current spike, which usually exists in a classical switching switched capacitor converter, can be eliminated. Both easy operation and efficiency are possible. Principles of operation, computer simulations and experimental results of the proposed circuit are presented. General analysis and design methods are given. The experimental result verifies the theoretical analysis of high frequency AC power generation.

  3. Switching Phenomena in a System with No Switches

    Science.gov (United States)

    Preis, Tobias; Stanley, H. Eugene

    2010-02-01

    It is widely believed that switching phenomena require switches, but this is actually not true. For an intriguing variety of switching phenomena in nature, the underlying complex system abruptly changes from one state to another in a highly discontinuous fashion. For example, financial market fluctuations are characterized by many abrupt switchings creating increasing trends ("bubble formation") and decreasing trends ("financial collapse"). Such switching occurs on time scales ranging from macroscopic bubbles persisting for hundreds of days to microscopic bubbles persisting only for a few seconds. We analyze a database containing 13,991,275 German DAX Future transactions recorded with a time resolution of 10 msec. For comparison, a database providing 2,592,531 of all S&P500 daily closing prices is used. We ask whether these ubiquitous switching phenomena have quantifiable features independent of the time horizon studied. We find striking scale-free behavior of the volatility after each switching occurs. We interpret our findings as being consistent with time-dependent collective behavior of financial market participants. We test the possible universality of our result by performing a parallel analysis of fluctuations in transaction volume and time intervals between trades. We show that these financial market switching processes have properties similar to those of phase transitions. We suggest that the well-known catastrophic bubbles that occur on large time scales—such as the most recent financial crisis—are no outliers but single dramatic representatives caused by the switching between upward and downward trends on time scales varying over nine orders of magnitude from very large (≈102 days) down to very small (≈10 ms).

  4. A Force Balanced Fragmentation Method for ab Initio Molecular Dynamic Simulation of Protein

    Directory of Open Access Journals (Sweden)

    Mingyuan Xu

    2018-05-01

    Full Text Available A force balanced generalized molecular fractionation with conjugate caps (FB-GMFCC method is proposed for ab initio molecular dynamic simulation of proteins. In this approach, the energy of the protein is computed by a linear combination of the QM energies of individual residues and molecular fragments that account for the two-body interaction of hydrogen bond between backbone peptides. The atomic forces on the caped H atoms were corrected to conserve the total force of the protein. Using this approach, ab initio molecular dynamic simulation of an Ace-(ALA9-NME linear peptide showed the conservation of the total energy of the system throughout the simulation. Further a more robust 110 ps ab initio molecular dynamic simulation was performed for a protein with 56 residues and 862 atoms in explicit water. Compared with the classical force field, the ab initio molecular dynamic simulations gave better description of the geometry of peptide bonds. Although further development is still needed, the current approach is highly efficient, trivially parallel, and can be applied to ab initio molecular dynamic simulation study of large proteins.

  5. Low-temperature DC-contact piezoelectric switch operable in high magnetic fields

    CERN Document Server

    Kaltenbacher, T; Doser, M; Kellerbauer, A; Pribyl, W

    2013-01-01

    A piezoelectric single-pole single-throw (SPST) switch has been developed, since there is no satisfying commercial low-resistance, high current DC-contact RF switch available which is operable at 4.2K and in a high magnetic field of at least 0.5T. This piezoelectric switch shows very low insertion loss of less than -0.1dB within a bandwidth of 100MHz when operated at 4.2K. The switch could also be used to mechanically disconnect and connect electrodes or electrical circuits from one another.

  6. Low-temperature DC-contact piezoelectric switch operable in high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Kaltenbacher, Thomas, E-mail: thomas.kaltenbacher@cern.ch [Physics and Accelerator Departments, CERN, 1211 Geneva 23 (Switzerland); Institute of Electronics, Graz University of Technology, Inffeldgasse 12, 8010 Graz (Austria); Caspers, Fritz; Doser, Michael [Physics and Accelerator Departments, CERN, 1211 Geneva 23 (Switzerland); Kellerbauer, Alban [Max Planck Institute for Nuclear Physics, Saupfercheckweg 1, 69117 Heidelberg (Germany); Pribyl, Wolfgang [Institute of Electronics, Graz University of Technology, Inffeldgasse 12, 8010 Graz (Austria)

    2013-11-21

    A piezoelectric single-pole single-throw (SPST) switch has been developed, since there is no satisfying commercial low-resistance, high current DC-contact RF switch available which is operable at 4.2 K and in a high magnetic field of at least 0.5 T. This piezoelectric switch shows very low insertion loss of less than −0.1 dB within a bandwidth of 100 MHz when operated at 4.2 K. The switch could also be used to mechanically disconnect and connect electrodes or electrical circuits from one another.

  7. Modelling of Moving Coil Actuators in Fast Switching Valves Suitable for Digital Hydraulic Machines

    DEFF Research Database (Denmark)

    Nørgård, Christian; Roemer, Daniel Beck; Bech, Michael Møller

    2015-01-01

    an estimation of the eddy currents generated in the actuator yoke upon current rise, as they may have significant influence on the coil current response. The analytical model facilitates fast simulation of the transient actuator response opposed to the transient electro-magnetic finite element model which......The efficiency of digital hydraulic machines is strongly dependent on the valve switching time. Recently, fast switching have been achieved by using a direct electromagnetic moving coil actuator as the force producing element in fast switching hydraulic valves suitable for digital hydraulic...... machines. Mathematical models of the valve switching, targeted for design optimisation of the moving coil actuator, are developed. A detailed analytical model is derived and presented and its accuracy is evaluated against transient electromagnetic finite element simulations. The model includes...

  8. Quantifying transition voltage spectroscopy of molecular junctions: Ab initio calculations

    DEFF Research Database (Denmark)

    Chen, Jingzhe; Markussen, Troels; Thygesen, Kristian Sommer

    2010-01-01

    Transition voltage spectroscopy (TVS) has recently been introduced as a spectroscopic tool for molecular junctions where it offers the possibility to probe molecular level energies at relatively low bias voltages. In this work we perform extensive ab initio calculations of the nonlinear current...

  9. Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

    Science.gov (United States)

    Cai, Kaiming; Yang, Meiyin; Ju, Hailang; Wang, Sumei; Ji, Yang; Li, Baohe; Edmonds, Kevin William; Sheng, Yu; Zhang, Bao; Zhang, Nan; Liu, Shuai; Zheng, Houzhi; Wang, Kaiyou

    2017-07-01

    All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations and micromagnetic simulations.

  10. Reducing Ripple In A Switching Voltage Regulator

    Science.gov (United States)

    Paulkovich, John; Rodriguez, G. Ernest

    1994-01-01

    Ripple voltage in output of switching voltage regulator reduced substantially by simple additional circuitry adding little to overall weight and size of regulator. Heretofore, additional filtering circuitry needed to obtain comparable reductions in ripple typically as large and heavy as original regulator. Current opposing ripple current injected into filter capacitor.

  11. Data characteristics and preliminary results from the atacama b-mode search (ABS)

    Science.gov (United States)

    Visnjic, Catherine

    The Atacama B-Mode Search (ABS) is a 145 GHz polarimeter located at a high altitude site on Cerro Toco, in the Andes of northern Chile. Having deployed in early 2012, it is currently in its second year of operation, observing the polarization of the Cosmic Microwave Background (CMB). It seeks to probe the as yet undetected odd-parity B-modes of the polarization, which would have been created by the primordial gravitational wave background (GWB) predicted by theories of inflation. The magnitude of the B-mode signal is characterized by the tensor-to-scalar ratio, r. ABS features 60 cm cryogenic reflectors in the crossed-Dragone configuration, and a warm, continuously rotating sapphire half-wave plate to modulate the polarization of incoming radiation. The focal plane consists of 480 antenna-coupled transition edge sensor bolometers, arranged in orthogonal pairs for polarization sensitivity, and coupled to feedhorns in a hexagonal array. In this thesis we describe the ABS instrument in the state in which it is now operating, outline the first season of observations, and characterize the data obtained. Focusing on observations of the primary CMB field during a one month reference period, we detail the algorithms currently used to select the data suitable for making maps. This is the first pass at data cuts and provides a conservative estimate for the sensitivity of ABS to the polarization modes in the sky. We project that with one year total observation time of the primary CMB field, ABS should be able to detect the B-mode signal at roughly the level of r = 0.03.

  12. Resistive switching behavior of SiOx layers with Si nanoparticles

    International Nuclear Information System (INIS)

    Nesheva, D; Pantchev, B; Manolov, E; Dzhurkov, V; Nedev, N; Valdez, B; Nedev, R

    2017-01-01

    First results on resistive switching in SiO x film containing crystalline silicon nanoparticles are reported. SiO x layers ( x = 1.15) with thickness of 50 nm were deposited on n-Si crystalline substrates and annealed for 60 min at 1000 o C to grow crystalline nanoparticles. Part of the samples were annealed in an inert atmosphere, while the rest were subjected to a two-step (O 2 +N 2 /N 2 ) annealing process. Current-voltage (I-V) characteristics were by applying positive or negative voltage to the top contact. For both types of samples the I-V characteristics were asymmetric with lower currents measured at negative voltage, especially in the case of two-step annealed samples. In most of the N 2 annealed structures switching behavior high-low/low-high resistance state was observed in both polarities at voltages with amplitudes in the range (2 - 4) V. Uncontrolled switching low/high resistance was also seen, more frequently at positive voltages. In contrast, the two-step annealed samples showed stable behavior. The transition high-low resistance state was achieved by negative voltages in the (-2, -5) V range leading to an increase of the current by more than three orders of magnitude. The structures were reset to the high resistive state, by positive voltage in the range (3 - 4) V. Uncontrolled switching was not observed in the two-step annealed samples for both polarities and they showed higher reliability regarding the number of switching cycles. (paper)

  13. Influence of irradiation on the switching behavior in PZT thin films

    International Nuclear Information System (INIS)

    Baturin, I.; Menou, N.; Shur, V.; Muller, C.; Kuznetsov, D.; Hodeau, J.-L.; Sternberg, A.

    2005-01-01

    Spatially nonuniform imprint behavior induced by X-ray synchrotron, electron and neutron irradiation has been investigated in sol-gel Pb(Zr,Ti)O 3 thin films. The analysis of the switching current data reveals the strong influence of irradiation on the switching current shape. The obtained effects have been explained as a result of acceleration of the bulk screening process induced by irradiation. It was shown that the spatial distribution of the internal bias field is determined by the domain structure existing during irradiation. The changes in the structural characteristics during fatigue cycling have been reveled by high resolution synchrotron X-ray diffraction experiments on (1 1 1)-oriented PZT-based capacitors with a composition in the morphotropic region. From both ex situ and in situ measurements, microstructural changes with cyclic switching during fatigue have been evidenced and correlated with the evolution of the switching characteristics

  14. Unity power factor switching regulator

    Science.gov (United States)

    Rippel, Wally E. (Inventor)

    1983-01-01

    A single or multiphase boost chopper regulator operating with unity power factor, for use such as to charge a battery is comprised of a power section for converting single or multiphase line energy into recharge energy including a rectifier (10), one inductor (L.sub.1) and one chopper (Q.sub.1) for each chopper phase for presenting a load (battery) with a current output, and duty cycle control means (16) for each chopper to control the average inductor current over each period of the chopper, and a sensing and control section including means (20) for sensing at least one load parameter, means (22) for producing a current command signal as a function of said parameter, means (26) for producing a feedback signal as a function of said current command signal and the average rectifier voltage output over each period of the chopper, means (28) for sensing current through said inductor, means (18) for comparing said feedback signal with said sensed current to produce, in response to a difference, a control signal applied to the duty cycle control means, whereby the average inductor current is proportionate to the average rectifier voltage output over each period of the chopper, and instantaneous line current is thereby maintained proportionate to the instantaneous line voltage, thus achieving a unity power factor. The boost chopper is comprised of a plurality of converters connected in parallel and operated in staggered phase. For optimal harmonic suppression, the duty cycles of the switching converters are evenly spaced, and by negative coupling between pairs 180.degree. out-of-phase, peak currents through the switches can be reduced while reducing the inductor size and mass.

  15. Coulomb Blockade Plasmonic Switch.

    Science.gov (United States)

    Xiang, Dao; Wu, Jian; Gordon, Reuven

    2017-04-12

    Tunnel resistance can be modulated with bias via the Coulomb blockade effect, which gives a highly nonlinear response current. Here we investigate the optical response of a metal-insulator-nanoparticle-insulator-metal structure and show switching of a plasmonic gap from insulator to conductor via Coulomb blockade. By introducing a sufficiently large charging energy in the tunnelling gap, the Coulomb blockade allows for a conductor (tunneling) to insulator (capacitor) transition. The tunnelling electrons can be delocalized over the nanocapacitor again when a high energy penalty is added with bias. We demonstrate that this has a huge impact on the plasmonic resonance of a 0.51 nm tunneling gap with ∼70% change in normalized optical loss. Because this structure has a tiny capacitance, there is potential to harness the effect for high-speed switching.

  16. Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

    International Nuclear Information System (INIS)

    Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

    2016-01-01

    In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge 2 Sb 2 Te 5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters

  17. Preliminary experiment research of explosively driven opening switch

    International Nuclear Information System (INIS)

    Li Xiaolin; Chen Dongqun; Li Da; Cao Shengguang; Chen Yingcong

    2010-01-01

    In pulse power technology field, many loads require high current pulse with fast risetime, but sometimes, the common high current pulse powers don't satisfy request, thus there need pulse erection switches of sorts to shorten pulse risetime. Explosively driven opening switch (EDOS) is a good choice, it has simple structure and excellent performance, the primary parameters of EDOS are opening time, opening resistance, opening current and dissipation energy, which determine its performance and range for applications. For this, two kinds of EDOS are designed and manufactured, in the later experiments, the power supply is a 200 μF capacitor and the conductor is 0.03 mm copper foil, the results indicate that the two kinds of EDOS have good performance, the opening time is about 1-3 μs, the opening resistance is about 1-2 Ω, the opening current is about 24-31 kA and the average dissipation energy is about 0.125-0.34 kJ per groove, the capability of conduction current is adjusted by the thickness of conductor along with different opening current. (authors)

  18. Ab initio study of the isomerism of (LiAB)2 salt dimers with 24 valence electrons (AB- = NO-, PO-, NS-, PS-)

    International Nuclear Information System (INIS)

    Charkin, O.P.; Klimenko, N.M.; MakKi, M.L.

    2000-01-01

    The nonempiric calculations of the potential energies surfaces in the vicinity of the key structures of the loose dimer molecules of the (LiNO) 2 , (LiPO) 2 , (LiNS) 2 and (LiPS) 2 lithium salts with 24 valence electrons are accomplished within the frames of the MP2/6-31G * //HF/6-31g * + ZPE(HF/6-31G * and MP4SDTQ/6-31G * //MP2/6-31G * + ZPE(MP2/6-31G * ) approximation. The equilibrium geometrical parameters, relative energies and isomer decay energies, frequencies and IR-intensities of normal vibrations are determined. The geometrical deformations and shifts of vibrational frequencies of the cis- and trans-dianions under the effect of cations by different ways of their coordination as well as tendencies of the molecular properties behaviour in various series of dimers (LiAB) 2 are analyzed. The results obtained are compared with the data of previous calculations of the LiAB salts monomeric molecules, the Li 2 AB + ions with 12 valence electrons and the (LiAB) 2 dimers with 20 valence electrons [ru

  19. A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition.

    Science.gov (United States)

    Dong, Kaichen; Choe, Hwan Sung; Wang, Xi; Liu, Huili; Saha, Bivas; Ko, Changhyun; Deng, Yang; Tom, Kyle B; Lou, Shuai; Wang, Letian; Grigoropoulos, Costas P; You, Zheng; Yao, Jie; Wu, Junqiao

    2018-04-01

    Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously. Here 0.2 V MEM switching devices with ≳10 6 safe operating cycles in ambient air are reported, which achieve the lowest operating voltage in mechanical switches without body bias reported to date. The ultralow operating voltage is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide (VO 2 ) slightly above room temperature. The phase-transition MEM switches open possibilities for sub 1 V hybrid integrated devices/circuits/systems, as well as ultralow power consumption sensors for Internet of Things applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. A Robust 96.6-dB-SNDR 50-kHz-Bandwidth Switched-Capacitor Delta-Sigma Modulator for IR Imagers in Space Instrumentation.

    Science.gov (United States)

    Dei, Michele; Sutula, Stepan; Cisneros, Jose; Pun, Ernesto; Jansen, Richard Jan Engel; Terés, Lluís; Serra-Graells, Francisco

    2017-06-02

    Infrared imaging technology, used both to study deep-space bodies' radiation and environmental changes on Earth, experienced constant improvements in the last few years, pushing data converter designers to face new challenges in terms of speed, power consumption and robustness against extremely harsh operating conditions. This paper presents a 96.6-dB-SNDR (Signal-to-Noise-plus-Distortion Ratio) 50-kHz-bandwidth fourth-order single-bit switched-capacitor delta-sigma modulator for ADC operating at 1.8 V and consuming 7.9 mW fit for space instrumentation. The circuit features novel Class-AB single-stage switched variable-mirror amplifiers (SVMAs) enabling low-power operation, as well as low sensitivity to both process and temperature deviations for the whole modulator. The physical implementation resulted in a 1.8-mm 2 chip integrated in a standard 0.18-µm 1-poly-6-metal (1P6M) CMOS technology, and it reaches a 164.6-dB Schreier figure of merit from experimental SNDR measurements without making use of any clock bootstrapping,analogcalibration,nordigitalcompensationtechnique. Whencoupledtoa2048×2048 IR imager, the current design allows more than 50 frames per minute with a resolution of 16 effective number of bits (ENOB) while consuming less than 300 mW.

  1. Optically coupled cavities for wavelength switching

    Energy Technology Data Exchange (ETDEWEB)

    Costazo-Caso, Pablo A; Granieri, Sergio; Siahmakoun, Azad, E-mail: pcostanzo@ing.unlp.edu.ar, E-mail: granieri@rose-hulman.edu, E-mail: siahmako@rose-hulman.edu [Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Avenue, Terre Haute, IN 47803 (United States)

    2011-01-01

    An optical bistable device which presents hysteresis behavior is proposed and experimentally demonstrated. The system finds applications in wavelength switching, pulse reshaping and optical bistability. It is based on two optically coupled cavities named master and slave. Each cavity includes a semiconductor optical amplifier (SOA), acting as the gain medium of the laser, and two pair of fiber Bragg gratings (FBG) which define the lasing wavelength (being different in each cavity). Finally, a variable optical coupler (VOC) is employed to couple both cavities. Experimental characterization of the system performance is made analyzing the effects of the coupling coefficient between the two cavities and the driving current in each SOA. The properties of the hysteretic bistable curve and switching can be controlled by adjusting these parameters and the loss in the cavities. By selecting the output wavelength ({lambda}{sub 1} or {lambda}{sub 2}) with an external filter it is possible to choose either the invert or non-invert switched signal. Experiments were developed employing both optical discrete components and a photonic integrated circuit. They show that for 8 m-long cavities the maximum switching frequency is about 500 KHz, and for 4 m-long cavities a minimum rise-time about 21 ns was measured. The switching time can be reduced by shortening the cavity lengths and using photonic integrated circuits.

  2. Optimal control of switching time in switched stochastic systems with multi-switching times and different costs

    Science.gov (United States)

    Liu, Xiaomei; Li, Shengtao; Zhang, Kanjian

    2017-08-01

    In this paper, we solve an optimal control problem for a class of time-invariant switched stochastic systems with multi-switching times, where the objective is to minimise a cost functional with different costs defined on the states. In particular, we focus on problems in which a pre-specified sequence of active subsystems is given and the switching times are the only control variables. Based on the calculus of variation, we derive the gradient of the cost functional with respect to the switching times on an especially simple form, which can be directly used in gradient descent algorithms to locate the optimal switching instants. Finally, a numerical example is given, highlighting the validity of the proposed methodology.

  3. Transient-Switch-Signal Suppressor

    Science.gov (United States)

    Bozeman, Richard J., Jr.

    1995-01-01

    Circuit delays transmission of switch-opening or switch-closing signal until after preset suppression time. Used to prevent transmission of undesired momentary switch signal. Basic mode of operation simple. Beginning of switch signal initiates timing sequence. If switch signal persists after preset suppression time, circuit transmits switch signal to external circuitry. If switch signal no longer present after suppression time, switch signal deemed transient, and circuit does not pass signal on to external circuitry, as though no transient switch signal. Suppression time preset at value large enough to allow for damping of underlying pressure wave or other mechanical transient.

  4. Ab initio vel ex eventu

    Science.gov (United States)

    Thiessen, P. A.; Treder, H.-J.

    Der gegenwärtige Stand der physikalischen Erkenntnis, in Sonderheit die Atomistik und die Quantentheorie, ermöglicht (in wohldefinierten Energie-Bereichen) eine ab initio-Berechnung aller physikalischen und chemischen Prozesse und Strukturen. Die Schrödinger-Gleichung erlaubt zusammen mit den Prinzipien der Quantenstatistik (Pauli-Prinzip) aus dem Planckschen Wirkungsquantum h und den atomischen Konstanten die Berechnung aller Energieumsätze, Zeitabläufe etc., die insbesondere die chemische Physik bestimmen. Die Rechenresultate gelten auch quantitativ bis auf die unvermeidliche Stochastik.Die ab initio-Berechnungen korrespondieren einerseits und sind andererseits komplementär zu den auf den Methoden der theoretischen Chemie und der klassischen Thermodynamik beruhenden Ergebnissen ex eventu. Die theoretische Behandlung ab initio führt zu mathematischen Experimenten, die die Laboratoriums-Experimente ergänzen oder auch substituieren.Translated AbstractAb initio vel ex eventuThe present state of physical knowledge, in peculiar atomistic and quantum theory, makes an ab initio calculation of all physical and chemical processes and structures possible (in well defined reaches of energy). The Schrödinger equation together with the principles of quantum statistics (Pauli principle) permits from the Planck and atomistic constants to calculate all exchanges of energy, courses of time, etc. which govern chemical physics. The calculated results are valid even quantitatively apart from the unavoidable stochastics.These ab initio calculations on the one hand correspond and are on the other complimentary to results ex eventu based on the methods of theoretical chemistry and classical thermodynamics. Theoretical treatment ab initio leads to mathematical experiments which add to or even substitute experiments in the laboratory.

  5. Resistive switching in Pt/TiO{sub 2}/Pt

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Doo Seok

    2008-08-15

    Recently, the resistive switching behavior in TiO{sub 2} has drawn attention due to its application to resistive random access memory (RRAM) devices. TiO{sub 2} shows characteristic non-volatile resistive switching behavior, i.e. reversible switching between a high resistance state (HRS) and a low resistance state (LRS). Both unipolar resistive switching (URS) and bipolar resistive switching (BRS) are found to be observed in TiO{sub 2} depending on the compliance current for the electroforming. In this thesis the characteristic current-voltage (I-V) hysteresis in three different states of TiO{sub 2}, pristine, URS-activated, and BRS-activated states, was investigated and understood in terms of the migration of oxygen vacancies in TiO{sub 2}. The I-V hysteresis of pristine TiO{sub 2} was found to show volatile behavior. That is, the temporary variation of the resistance took place depending on the applied voltage. However, the I-V hysteresis of URS- and BRS-activated states showed non-volatile resistive switching behavior. Some evidences proving the evolution of oxygen gas during electroforming were obtained from time-of-flight secondary ion mass spectroscopy analysis and the variation of the morphology of switching cells induced by the electroforming. On the assumption that a large number of oxygen vacancies are introduced by the electroforming process, the I-V behavior in electroformed switching cells was simulated with varying the distribution of oxygen vacancies in electroformed TiO{sub x} (x

  6. Protection relay of phase-shifting device with thyristor switch for high voltage power transmission lines

    Science.gov (United States)

    Lachugin, V. F.; Panfilov, D. I.; Akhmetov, I. M.; Astashev, M. G.; Shevelev, A. V.

    2014-12-01

    Problems of functioning of differential current protection systems of phase shifting devices (PSD) with mechanically changed coefficient of transformation of shunt transformer are analyzed. Requirements for devices of protection of PSD with thyristor switch are formulated. Based on use of nonlinear models of series-wound and shunt transformers of PSD modes of operation of major protection during PSD, switching to zero load operation and to operation under load and during short circuit operation were studied for testing PSD with failures. Use of the principle of duplicating by devices of differential current protection (with realization of functions of breaking) of failures of separate pares of PSD with thyristor switch was substantiated. To ensure protection sensitivity to the shunt transformer winding short circuit, in particular, to a short circuit that is not implemented in the current differential protection for PSD with mechanical switch, the differential current protection reacting to the amount of primary ampere-turns of high-voltage and low-voltage winding of this transformer was designed. Studies have shown that the use of differential current cutoff instead of overcurrent protection for the shunt transformer wndings allows one to provide the sensitivity during thyristor failure with the formation of a short circuit. The results of simulation mode for the PSD with switch thyristor designed to be installed as switching point of Voskhod-Tatarskaya-Barabinsk 220 kV transmission line point out the efficiency of the developed solutions that ensure reliable functioning of the PSD.

  7. Plasma opening switch experiments on the Particle Beam Accelerator II

    International Nuclear Information System (INIS)

    Sweeney, M.A.; McDaniel, D.H.; Mendel, C.W.; Rochau, G.E.; Moore, W.B.S.; Mowrer, G.R.; Simpson, W.W.; Zagar, D.M.; Grasser, T.; McDougal, C.D.

    1989-01-01

    Plasma opening switch (POS) experiments have been done since 1986 on the PBFA-II ion beam accelerator to develop a rugged POS that will open rapidly ( 80%) into a high impedance (> 10 ohm) load. In a recent series of experiments on PBFA II, the authors have developed and tested three different switch designs that use magnetic fields to control and confine the injected plasma. All three configurations couple current efficiently to a 5-ohm electron beam diode. In this experimental series, the PBFA-II Delta Series, more extensive diagnostics were used than in previous switch experiments on PBFA II or on the Blackjack 5 accelerator at Maxwell Laboratories. Data from the experiments with these three switch designs is presented

  8. Superconducting Switch for Fast On-Chip Routing of Quantum Microwave Fields

    Science.gov (United States)

    Pechal, M.; Besse, J.-C.; Mondal, M.; Oppliger, M.; Gasparinetti, S.; Wallraff, A.

    2016-08-01

    A switch capable of routing microwave signals at cryogenic temperatures is a desirable component for state-of-the-art experiments in many fields of applied physics, including but not limited to quantum-information processing, communication, and basic research in engineered quantum systems. Conventional mechanical switches provide low insertion loss but disturb operation of dilution cryostats and the associated experiments by heat dissipation. Switches based on semiconductors or microelectromechanical systems have a lower thermal budget but are not readily integrated with current superconducting circuits. Here we design and test an on-chip switch built by combining tunable transmission-line resonators with microwave beam splitters. The device is superconducting and as such dissipates a negligible amount of heat. It is compatible with current superconducting circuit fabrication techniques, operates with a bandwidth exceeding 100 MHz, is capable of handling photon fluxes on the order of 1 05 μ s-1 , equivalent to powers exceeding -90 dBm , and can be switched within approximately 6-8 ns. We successfully demonstrate operation of the device in the quantum regime by integrating it on a chip with a single-photon source and using it to route nonclassical itinerant microwave fields at the single-photon level.

  9. An improved soft switched PWM interleaved boost AC-DC converter

    International Nuclear Information System (INIS)

    Genc, Naci; Iskender, Ires

    2011-01-01

    In this paper, an improved soft switched two cell interleaved boost AC/DC converter with high power factor is proposed and investigated. A new auxiliary circuit is designed and added to two cell interleaved boost converter to reduce the switching losses. The proposed auxiliary circuit is implemented using only one auxiliary switch and a minimum number of passive components without an important increase in the cost and complexity of the converter. The main advantage of this auxiliary circuit is that it not only provides zero-voltage-transition (ZVT) for the main switches but also provides soft switching for the auxiliary switch and diodes. Though all semiconductor devices operate under soft switching, they do not have any additional voltage and current stresses. The proposed converter operates successfully in soft switching operation mode for a wide range of input voltage level and the load. In addition, it has advantages such as fewer structure complications, lower cost and ease of control. In the study, the transition modes for describing the behavior of the proposed converter in one switching period are described. A prototype with 600 W output power, 50 kHz/cell switching frequency, input line voltage of 110-220 V rms and an output voltage of 400 V dc has been implemented. Analysis, design and the control circuitry are also presented in the paper.

  10. Inherently safe SNR shutdown system with Curie point controlled sensor/switch unit

    International Nuclear Information System (INIS)

    Mueller, K.; Norajitra, P.; Reiser, H.

    1987-02-01

    Inherent shutdown due to increase in the sodium temperature at the core outlet is triggered by interruption of the current supply to the electromagnet coupling of absorber elements via curie point controlled sensor/switch units. These switches are arranged above suitable fuel element positions and spatially independent of the shutdown elements. Compared with other similar systems very short response times are achieved. A prototype switch unit has already undergone extensive testing. These tests have confirmed that switching takes place in a very narrow temperature range. (orig./HP) [de

  11. Operation of a homeostatic sleep switch.

    Science.gov (United States)

    Pimentel, Diogo; Donlea, Jeffrey M; Talbot, Clifford B; Song, Seoho M; Thurston, Alexander J F; Miesenböck, Gero

    2016-08-18

    Sleep disconnects animals from the external world, at considerable risks and costs that must be offset by a vital benefit. Insight into this mysterious benefit will come from understanding sleep homeostasis: to monitor sleep need, an internal bookkeeper must track physiological changes that are linked to the core function of sleep. In Drosophila, a crucial component of the machinery for sleep homeostasis is a cluster of neurons innervating the dorsal fan-shaped body (dFB) of the central complex. Artificial activation of these cells induces sleep, whereas reductions in excitability cause insomnia. dFB neurons in sleep-deprived flies tend to be electrically active, with high input resistances and long membrane time constants, while neurons in rested flies tend to be electrically silent. Correlative evidence thus supports the simple view that homeostatic sleep control works by switching sleep-promoting neurons between active and quiescent states. Here we demonstrate state switching by dFB neurons, identify dopamine as a neuromodulator that operates the switch, and delineate the switching mechanism. Arousing dopamine caused transient hyperpolarization of dFB neurons within tens of milliseconds and lasting excitability suppression within minutes. Both effects were transduced by Dop1R2 receptors and mediated by potassium conductances. The switch to electrical silence involved the downregulation of voltage-gated A-type currents carried by Shaker and Shab, and the upregulation of voltage-independent leak currents through a two-pore-domain potassium channel that we term Sandman. Sandman is encoded by the CG8713 gene and translocates to the plasma membrane in response to dopamine. dFB-restricted interference with the expression of Shaker or Sandman decreased or increased sleep, respectively, by slowing the repetitive discharge of dFB neurons in the ON state or blocking their entry into the OFF state. Biophysical changes in a small population of neurons are thus linked to the

  12. New fast switches for the Tore Supra ohmic heating circuit

    International Nuclear Information System (INIS)

    Zunino, K.; Bruneth, J.; Cara, P.; Louart, A.; Santagiustina, A.; Emelyanova, I.; Filippov, F.; Mikailov, N.

    2003-01-01

    The Tore-Supra ohmic heating circuit is equipped with four fast make switches and one fast opening switch. After many years of operation, it became necessary to substitute this equipment by modern components with similar ratings. An extensive research has been undertaken to find fast switches able to withstand more than 2500 operations per year without maintenance, at a make current of 54 kA, a voltage of 12 kV and with a closing time of less than 15 ms. At the end of the investigation, it was decided to replace the old components by fast mechanical switches proposed by the Efremov Institute and based on a prototype developed for ITER. This paper presents the technical requirements and the characteristics of the switches and describes the operational experience gained with these components during operating campaigns of 2002 and 2003. (authors)

  13. TopWorx/GO switch new generation nuclear qualified proximity position sensors

    International Nuclear Information System (INIS)

    Merrifield, G.

    2011-01-01

    An overview of the benefits of installing TopWorx/GO Nuclear Qualified Proximity Position Sensors instead of traditional mechanical switches. Mechanical switches have been the standard for the nuclear industry for years, but that is only because of lack of competition. Because of multiple moving parts, three-piece design, and new low current control systems, mechanical switches are susceptible to a host of environmental factors that cause them to break and/or fail. TopWorx/GO Switch is a smaller, rugged, dependable, one-piece Stainless Steel proximity position sensor that that exceeds CANDU and Global Qualification Levels, easily replacing mechanical switches. It is the only position sensor to meet or exceed Westinghouse AP 1000 specifications as well. Nuclear facilities save money in maintenance reductions, extended PM's and reduction in 'Man REM' hours. This is achieved by not having to service and replace GO Switch position sensors as often as mechanical switches, since their qualified life is 100 years +1 Post Accident submerged. Plant safety is increased due to less switch failure, higher qualification testing levels, repeatability and longer qualified life. (author)

  14. Energy-switching potential energy surface for the water molecule revisited: A highly accurate singled-sheeted form.

    Science.gov (United States)

    Galvão, B R L; Rodrigues, S P J; Varandas, A J C

    2008-07-28

    A global ab initio potential energy surface is proposed for the water molecule by energy-switching/merging a highly accurate isotope-dependent local potential function reported by Polyansky et al. [Science 299, 539 (2003)] with a global form of the many-body expansion type suitably adapted to account explicitly for the dynamical correlation and parametrized from extensive accurate multireference configuration interaction energies extrapolated to the complete basis set limit. The new function mimics also the complicated Sigma/Pi crossing that arises at linear geometries of the water molecule.

  15. Light-Induced Switching of Tunable Single-Molecule Junctions

    KAUST Repository

    Sendler, Torsten; Luka-Guth, Katharina; Wieser, Matthias; Lokamani; Wolf, Jannic Sebastian; Helm, Manfred; Gemming, Sibylle; Kerbusch, Jochen; Scheer, Elke; Huhn, Thomas; Erbe, Artur

    2015-01-01

    A major goal of molecular electronics is the development and implementation of devices such as single-molecular switches. Here, measurements are presented that show the controlled in situ switching of diarylethene molecules from their nonconductive to conductive state in contact to gold nanoelectrodes via controlled light irradiation. Both the conductance and the quantum yield for switching of these molecules are within a range making the molecules suitable for actual devices. The conductance of the molecular junctions in the opened and closed states is characterized and the molecular level E 0, which dominates the current transport in the closed state, and its level broadening Γ are identified. The obtained results show a clear light-induced ring forming isomerization of the single-molecule junctions. Electron withdrawing side-groups lead to a reduction of conductance, but do not influence the efficiency of the switching mechanism. Quantum chemical calculations of the light-induced switching processes correlate these observations with the fundamentally different low-lying electronic states of the opened and closed forms and their comparably small modification by electron-withdrawing substituents. This full characterization of a molecular switch operated in a molecular junction is an important step toward the development of real molecular electronics devices.

  16. Light-Induced Switching of Tunable Single-Molecule Junctions

    KAUST Repository

    Sendler, Torsten

    2015-04-16

    A major goal of molecular electronics is the development and implementation of devices such as single-molecular switches. Here, measurements are presented that show the controlled in situ switching of diarylethene molecules from their nonconductive to conductive state in contact to gold nanoelectrodes via controlled light irradiation. Both the conductance and the quantum yield for switching of these molecules are within a range making the molecules suitable for actual devices. The conductance of the molecular junctions in the opened and closed states is characterized and the molecular level E 0, which dominates the current transport in the closed state, and its level broadening Γ are identified. The obtained results show a clear light-induced ring forming isomerization of the single-molecule junctions. Electron withdrawing side-groups lead to a reduction of conductance, but do not influence the efficiency of the switching mechanism. Quantum chemical calculations of the light-induced switching processes correlate these observations with the fundamentally different low-lying electronic states of the opened and closed forms and their comparably small modification by electron-withdrawing substituents. This full characterization of a molecular switch operated in a molecular junction is an important step toward the development of real molecular electronics devices.

  17. Plasma flow switch and foil implosion experiments on Pegasus II

    International Nuclear Information System (INIS)

    Cochrane, J.C.; Bartsch, R.R.; Benage, J.R.; Forman, P.R.; Gribble, R.F.; Ladish, J.S.; Oona, H.; Parker, J.V.; Scudder, D.W.; Shlachter, J.S.; Wysocki, F.J.

    1993-01-01

    Pegasus II is the upgraded version of Pegasus, a pulsed power machine used in the Los Alamos AGEX (Above Ground EXperiments) program. A goal of the program is to produce an intense (> 100 TW) source of soft x-rays from the thermalization of the kinetic energy of a 1 to 10 MJ plasma implosion. The radiation pulse should have a maximum duration of several 10's of nanoseconds and will be used in the study of fusion conditions and material properties. The radiating plasma source will be generated by the thermalization of the kinetic energy of an imploding cylindrical, thin, metallic foil. This paper addresses experiments done on a capacitor bank to develop a switch (plasma flow switch) to switch the bank current into the load at peak current. This allows efficient coupling of bank energy into foil kinetic energy

  18. Novel failure mechanism and improvement for split-gate trench MOSFET with large current under unclamped inductive switch stress

    Science.gov (United States)

    Tian, Ye; Yang, Zhuo; Xu, Zhiyuan; Liu, Siyang; Sun, Weifeng; Shi, Longxing; Zhu, Yuanzheng; Ye, Peng; Zhou, Jincheng

    2018-04-01

    In this paper, a novel failure mechanism under unclamped inductive switch (UIS) for Split-Gate Trench Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with large current is investigated. The device sample is tested and analyzed in detail. The simulation results demonstrate that the nonuniform potential distribution of the source poly should be responsible for the failure. Three structures are proposed and verified available to improve the device UIS ruggedness by TCAD simulation. The best one of the structures the device with source metal inserting into source poly through contacts in the field oxide is carried out and measured. The results demonstrate that the optimized structure can balance the trade-off between the UIS ruggedness and the static characteristics.

  19. Magnetization switching schemes for nanoscale three-terminal spintronics devices

    Science.gov (United States)

    Fukami, Shunsuke; Ohno, Hideo

    2017-08-01

    Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

  20. Role of parasitic capacitances in power MOSFET turn-on switching speed limits

    DEFF Research Database (Denmark)

    Cittanti, Davide; Iannuzzo, Francesco; Hoene, Eckart

    2017-01-01

    This paper describes the effect of MOSFET internal capacitances on the channel current during the turn-on switching transition: an intrinsic theoretical switching speed limit is found and detailed mathematically. The set of analytical equations is solved and the effect of the displacement currents...... is highlighted with ideal simulated waveforms. A laboratory experiment is thus performed, in order to prove the theoretical predictions: a 25 mΩ SiC CREE power MOSFET is turned on in a no-load condition (zero drain current), starting from different drain-source voltage values. Finally, a LTSpice equivalent...

  1. Simulation of plasma erosion opening switches

    International Nuclear Information System (INIS)

    Mason, R.J.; Jones, M.E.

    1988-01-01

    Recent progress in the modeling of Plasma Erosion Opening Switches is reviewed, and new results from both fluid and particle simulation compared. Three-fluid simulations with the ANTHEM code for switches on the NRL GAMBLE I machine and SNL PBFA II machine have shown strong dependence of the opening dynamics on the anode structure, the threshold for electron emission, on the possible presence of anomalous resistivity, and on advection of the magnetic field with cathode emitted electrons. Simulations with the implicit particle-in-cell code ISIS confirm these observations, but manifest broader current channels---in better agreement with GAMBLE I experimental results. 7 refs., 3 figs

  2. Study on Exothermic Oxidation of Acrylonitrile-butadiene-styrene (ABS Resin Powder with Application to ABS Processing Safety

    Directory of Open Access Journals (Sweden)

    Jenq-Renn Chen

    2010-08-01

    Full Text Available Oxidative degradation of commercial grade ABS (Acrylonitrile-butadiene-styrene resin powders was studied by thermal analysis. The instabilities of ABS containing different polybutadiene (PB contents with respect to temperature were studied by Differential Scanning Calorimeter (DSC. Thermograms of isothermal test and dynamic scanning were performed. Three exothermic peaks were observed and related to auto-oxidation, degradation and oxidative decomposition, respectively. Onset temperature of the auto-oxidation was determined to be around 193 °C. However, threshold temperature of oxidation was found to be as low as 140 °C by DSC isothermal testing. Another scan of the powder after degeneration in air showed an onset temperature of 127 °C. Reactive hazards of ABS powders were verified to be the exothermic oxidation of unsaturated PB domains, not the SAN (poly(styrene-acrylonitrile matrix. Heat of oxidation was first determined to be 2,800 ± 40 J per gram of ABS or 4,720 ± 20 J per gram of PB. Thermal hazards of processing ABS powder are assessed by adiabatic temperature rise at process conditions. IR spectroscopy associated with heat of oxidation verified the oxidative mechanism, and these evidences excluded the heat source from the degradation of SAN. A specially prepared powder of ABS without adding anti-oxidant was analyzed by DSC for comparing the exothermic behaviors. Exothermic onset temperatures were determined to be 120 °C and 80 °C by dynamic scanning and isothermal test, respectively. The assessment successfully explained fires and explosions in an ABS powder dryer and an ABS extruder.

  3. Radiation-sensitive switching circuits

    Energy Technology Data Exchange (ETDEWEB)

    Moore, J.H.; Cockshott, C.P.

    1976-03-16

    A radiation-sensitive switching circuit has a light emitting diode which supplies light to a photo-transistor, the light being interrupted from time to time. When the photo-transistor is illuminated, current builds up and when this current reaches a predetermined value, a trigger circuit changes state. The peak output of the photo-transistor is measured and the trigger circuit is arranged to change state when the output of the device is a set proportion of the peak output, so as to allow for aging of the components. The circuit is designed to control the ignition system in an automobile engine.

  4. A circuital model of switching behaviour of 4H-SiC p+-n-n+ diodes valid at any current and temperature

    International Nuclear Information System (INIS)

    Bellone, S; Benedetto, L Di; Licciardo, G D; Corte, F Della

    2014-01-01

    A circuital model of 4H-SiC p + -n-n + diodes is presented, which is able to describe the switching behaviour of the devices in a wide range of current, voltage and temperature, at an arbitrary instant, with comparable accuracy of numerical simulations. The model has been analytically derived under generic conditions and is capable to calculate also the dynamic spatial distribution of minority carriers in the epitaxial layer. The accuracy of the model is shown by comparison with numerical simulations and experimental measurements.

  5. A three-level support method for smooth switching of the micro-grid operation model

    Science.gov (United States)

    Zong, Yuanyang; Gong, Dongliang; Zhang, Jianzhou; Liu, Bin; Wang, Yun

    2018-01-01

    Smooth switching of micro-grid between the grid-connected operation mode and off-grid operation mode is one of the key technologies to ensure it runs flexible and efficiently. The basic control strategy and the switching principle of micro-grid are analyzed in this paper. The reasons for the fluctuations of the voltage and the frequency in the switching process are analyzed from views of power balance and control strategy, and the operation mode switching strategy has been improved targeted. From the three aspects of controller’s current inner loop reference signal, voltage outer loop control strategy optimization and micro-grid energy balance management, a three-level security strategy for smooth switching of micro-grid operation mode is proposed. From the three aspects of controller’s current inner loop reference signal tracking, voltage outer loop control strategy optimization and micro-grid energy balance management, a three-level strategy for smooth switching of micro-grid operation mode is proposed. At last, it is proved by simulation that the proposed control strategy can make the switching process smooth and stable, the fluctuation problem of the voltage and frequency has been effectively improved.

  6. Proposal for the momentum-resolved and time-resolved optical measurement of the current distribution in semiconductors.

    Science.gov (United States)

    Liu, Jiang-Tao; Su, Fu-Hai; Deng, Xin-Hua; Wang, Hai

    2012-05-21

    The two-color optical coherence absorption spectrum (QUIC-AB) of semiconductors in the presence of a charge current is investigated. We find that the QUIC-AB depends strongly not only on the amplitude of the electron current but also on the direction of the electron current. Thus, the amplitude and the angular distribution of current in semiconductors can be detected directly in real time with the QUIC-AB.

  7. Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

    Science.gov (United States)

    Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

    2018-01-01

    Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

  8. Intentional preparation of auditory attention-switches: Explicit cueing and sequential switch-predictability.

    Science.gov (United States)

    Seibold, Julia C; Nolden, Sophie; Oberem, Josefa; Fels, Janina; Koch, Iring

    2018-06-01

    In an auditory attention-switching paradigm, participants heard two simultaneously spoken number-words, each presented to one ear, and decided whether the target number was smaller or larger than 5 by pressing a left or right key. An instructional cue in each trial indicated which feature had to be used to identify the target number (e.g., female voice). Auditory attention-switch costs were found when this feature changed compared to when it repeated in two consecutive trials. Earlier studies employing this paradigm showed mixed results when they examined whether such cued auditory attention-switches can be prepared actively during the cue-stimulus interval. This study systematically assessed which preconditions are necessary for the advance preparation of auditory attention-switches. Three experiments were conducted that controlled for cue-repetition benefits, modality switches between cue and stimuli, as well as for predictability of the switch-sequence. Only in the third experiment, in which predictability for an attention-switch was maximal due to a pre-instructed switch-sequence and predictable stimulus onsets, active switch-specific preparation was found. These results suggest that the cognitive system can prepare auditory attention-switches, and this preparation seems to be triggered primarily by the memorised switching-sequence and valid expectations about the time of target onset.

  9. The 2-alkyl-2H-indazole regioisomers of synthetic cannabinoids AB-CHMINACA, AB-FUBINACA, AB-PINACA, and 5F-AB-PINACA are possible manufacturing impurities with cannabimimetic activities

    OpenAIRE

    Longworth, Mitchell; Banister, Samuel D.; Mack, James B. C.; Glass, Michelle; Connor, Mark; Kassiou, Michael

    2016-01-01

    Indazole-derived synthetic cannabinoids (SCs) featuring an alkyl substituent at the 1-position and l-valinamide at the 3-carboxamide position (e.g., AB-CHMINACA) have been identified by forensic chemists around the world, and are associated with serious adverse health effects. Regioisomerism is possible for indazole SCs, with the 2-alkyl-2H-indazole regioisomer of AB-CHMINACA recently identified in SC products in Japan. It is unknown whether this regiosiomer represents a manufacturing impurit...

  10. Ab-initio calculation of electronic structure and optical properties of AB-stacked bilayer α-graphyne

    Science.gov (United States)

    Behzad, Somayeh

    2016-09-01

    Monolayer α-graphyne is a new two-dimensional carbon allotrope with many special features. In this work the electronic properties of AA- and AB-stacked bilayers of this material and then the optical properties are studied, using first principle plane wave method. The electronic spectrum has two Dirac cones for AA stacked bilayer α-graphyne. For AB-stacked bilayer, the interlayer interaction changes the linear bands into parabolic bands. The optical spectra of the most stable AB-stacked bilayer closely resemble to that of the monolayer, except for small shifts of peak positions and increasing of their intensity. For AB-stacked bilayer, a pronounced peak has been found at low energies under the perpendicular polarization. This peak can be clearly ascribed to the transitions at the Dirac point as a result of the small degeneracy lift in the band structure.

  11. Field Trial Performance of Herculex XTRA (Cry34Ab1/Cry35Ab1) and SmartStax (Cry34Ab1/Cry35Ab1 + Cry3Bb1) Hybrids and Soil Insecticides Against Western and Northern Corn Rootworms (Coleoptera: Chrysomelidae).

    Science.gov (United States)

    Johnson, K D; Campbell, L A; Lepping, M D; Rule, D M

    2017-06-01

    Western corn rootworm, Diabrotica virgifera virgifera LeConte (Coleoptera: Chrysomelidae), and northern corn rootworm, Diabrotica barberi Smith and Lawrence (Coleoptera: Chrysomelidae), are important insect pests in corn, Zea mays L. For more than a decade, growers have been using transgenic plants expressing proteins from the bacterium Bacillus thuringiensis (Bt) to protect corn roots from feeding. In 2011, western corn rootworm populations were reported to have developed resistance to Bt hybrids expressing Cry3Bb1 and later found to be cross-resistant to hybrids expressing mCry3A and eCry3.1Ab. The identification of resistance to Cry3 (Cry3Bb1, mCry3A, and eCry3.1Ab) hybrids led to concerns about durability and efficacy of products with single traits and of products containing a pyramid of a Cry3 protein and the binary Bt proteins Cry34Ab1 and Cry35Ab1. From 2012 to 2014, 43 field trials were conducted across the central United States to estimate root protection provided by plants expressing Cry34Ab1/Cry35Ab1 alone (Herculex RW) or pyramided with Cry3Bb1 (SmartStax). These technologies were evaluated with and without soil-applied insecticides to determine if additional management measures provided benefit where Cry3 performance was reduced. Trials were categorized for analysis based on rootworm damage levels on Cry3-expressing hybrids and rootworm feeding pressure within each trial. Across scenarios, Cry34Ab1/Cry35Ab1 hybrids provided excellent root protection. Pyramided traits provided greater root and yield protection than non-Bt plus a soil-applied insecticide, and only in trials where larval feeding pressure exceeded two nodes of damage did Cry34Ab1/Cry35Ab1 single-trait hybrids and pyramided hybrids show greater root protection from the addition of soil-applied insecticides. © The Authors 2017. Published by Oxford University Press on behalf of Entomological Society of America. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  12. Task switching costs in preschool children and adults.

    Science.gov (United States)

    Peng, Anna; Kirkham, Natasha Z; Mareschal, Denis

    2018-08-01

    Past research investigating cognitive flexibility has shown that preschool children make many perseverative errors in tasks that require switching between different sets of rules. However, this inflexibility might not necessarily hold with easier tasks. The current study investigated the developmental differences in cognitive flexibility using a task-switching procedure that compared reaction times and accuracy in 4- and 6-year-olds with those in adults. The experiment involved simple target detection tasks and was intentionally designed in a way that the stimulus and response conflicts were minimal together with a long preparation window. Global mixing costs (performance costs when multiple tasks are relevant in a context), and local switch costs (performance costs due to switching to an alternative task) are typically thought to engage endogenous control processes. If this is the case, we should observe developmental differences with both of these costs. Our results show, however, that when the accuracy was good, there were no age differences in cognitive flexibility (i.e., the ability to manage multiple tasks and to switch between tasks) between children and adults. Even though preschool children had slower reaction times and were less accurate, the mixing and switch costs associated with task switching were not reliably larger for preschool children. Preschool children did, however, show more commission errors and greater response repetition effects than adults, which may reflect differences in inhibitory control. Copyright © 2018 Elsevier Inc. All rights reserved.

  13. Modality and Task Switching Interactions using Bi-Modal and Bivalent Stimuli

    Science.gov (United States)

    Sandhu, Rajwant; Dyson, Benjamin J.

    2013-01-01

    Investigations of concurrent task and modality switching effects have to date been studied under conditions of uni-modal stimulus presentation. As such, it is difficult to directly compare resultant task and modality switching effects, as the stimuli afford both tasks on each trial, but only one modality. The current study investigated task and…

  14. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

    KAUST Repository

    Huang, Yi-Jen

    2016-04-07

    The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (<±1 V) and self-compliance to current up to 50 μA. When it is used for threshold switching, the low threshold current is beneficial for improving the device selectivity. The variation of oxygen distribution measured by energy dispersive X-ray spectroscopy and scanning transmission electron microscopy indicates the formation or rupture of conducting filaments in the device at different resistance states. It is therefore suggested that the push and pull actions of oxygen ions in the amorphous TiOx and polycrystalline TiOx films during the voltage sweep account for the memory switching and threshold switching properties in the device.

  15. A modified two-level three-phase quasi-soft-switching inverter

    DEFF Research Database (Denmark)

    Liu, Yusheng; Wu, Weimin; Blaabjerg, Frede

    2014-01-01

    A traditional Voltage Source Inverter (VSI) has higher efficiency than a Current Voltage Source (CSI) due to the less conduction power loss. However, the reverse recovery of the free-wheeling diode limits the efficiency improvement for the silicon devices based hard-switching VSI. The traditional...... quasi-soft-switching inverter can alternate between VSI and CSI by using a proper control scheme and thereby reduce the power losses caused by the reverse recovery of the free-wheeling diode. Nevertheless, slightly extra conduction power loss of the auxiliary switch is also introduced. In order...... to reduce the extra conduction power loss and the voltage stress across the DC-link capacitor, a modified two-level three-phase quasi-soft-switching inverter is proposed by using a SiC MOSFET instead of an IGBT. The principle of the modified two-level three-phase quasi-soft-switching inverter is analyzed...

  16. Indigenous technology development : seismic switch for nuclear reactors

    International Nuclear Information System (INIS)

    Varghese, Shiju; Shah, Jay; Limaye, P.K.; Soni, N.L; Patel, R.J.

    2016-01-01

    After Fukushima incident it has become a regulatory requirement to have automatic reactor trip on detection of earthquake beyond OBE level. Seismic Switches that meets the technical specifications required for nuclear reactor use were not available in the market. Hence, on Nuclear Power Corporation of India Ltd (NPCIL's) request, Refuelling Technology Division, BARC has developed Seismic Switches (electronic earthquake detectors) required for this application. Functionality of the system was successfully tested using a Shake Table. Two different designs of seismic switches have been developed. One is a microcontroller based system (digital) and the other is fully analogue electronics (analog) based. These switches are designed to meet the technical requirements of Class IA systems of nuclear reactors. It is also designed to meet other qualification tests such as EMI/EMC, climatic, vibration, and reliability requirements. In addition to nuclear industry seismic switches are having potential use in oil and gas, power plants, buildings and other industrial installations. These technologies are currently available for technology transfer and details are published in BARC website. This paper describes the requirements, principle of operation, and features and testing of the developed systems. (author)

  17. Stability analysis of direct current control in current source rectifier

    DEFF Research Database (Denmark)

    Lu, Dapeng; Wang, Xiongfei; Blaabjerg, Frede

    2017-01-01

    Current source rectifier with high switching frequency has a great potential for improving the power efficiency and power density in ac-dc power conversion. This paper analyzes the stability of direct current control based on the time delay effect. Small signal model including dynamic behaviors...

  18. Evaluation on the stability of Hg in ABS disk CRM during measurements by wavelength dispersive X-ray fluorescence spectrometry.

    Science.gov (United States)

    Ohata, Masaki; Kidokoro, Toshihiro; Hioki, Akiharu

    2012-01-01

    The stability of Hg in an acrylonitrile-butadiene-styrene disk certified reference material (ABS disk CRM, NMIJ CRM 8116-a) during measurements by wavelength dispersion X-ray fluorescence (WD-XRF) analysis was evaluated in this study. The XRF intensities of Hg (L(α)) and Pb (L(α)) as well as the XRF intensity ratios of Hg (L(α))/Pb (L(α)) observed under different X-ray tube current conditions as well as their irradiation time were examined to evaluate the stability of Hg in the ABS disk CRM. The observed XRF intensities and the XRF intensity ratios for up to 32 h of measurements under 80 mA of X-ray tube current condition were constant, even though the surface of the ABS disk CRM was charred by the X-ray irradiation with high current for a long time. Moreover, the measurements on Hg and Pb in the charred disks by an energy dispersive XRF (ED-XRF) spectrometer showed constant XRF intensity ratios of Hg (L(α))/Pb (L(α)). From these results, Hg in the ABS disk CRM was evaluated to be sufficiently stable for XRF analysis.

  19. Demonstration of Ultra-Fast Switching in Nano metallic Resistive Switching Memory Devices

    International Nuclear Information System (INIS)

    Yang, Y.

    2016-01-01

    Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nano metallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic RC time of memory device (extrinsic device property). Both experiment and simulation show that the onset of cliff behavior is dependent on physical device size and parasitic resistance, which is expected to diminish as technology nodes shrink down. We believe this study provides solid evidence that nano metallic resistive switching memory can be reliably operated at low voltage and ultra-fast regime, thus beneficial to future memory technology.

  20. A fault-tolerant strategy based on SMC for current-controlled converters

    Science.gov (United States)

    Azer, Peter M.; Marei, Mostafa I.; Sattar, Ahmed A.

    2018-05-01

    The sliding mode control (SMC) is used to control variable structure systems such as power electronics converters. This paper presents a fault-tolerant strategy based on the SMC for current-controlled AC-DC converters. The proposed SMC is based on three sliding surfaces for the three legs of the AC-DC converter. Two sliding surfaces are assigned to control the phase currents since the input three-phase currents are balanced. Hence, the third sliding surface is considered as an extra degree of freedom which is utilised to control the neutral voltage. This action is utilised to enhance the performance of the converter during open-switch faults. The proposed fault-tolerant strategy is based on allocating the sliding surface of the faulty leg to control the neutral voltage. Consequently, the current waveform is improved. The behaviour of the current-controlled converter during different types of open-switch faults is analysed. Double switch faults include three cases: two upper switch fault; upper and lower switch fault at different legs; and two switches of the same leg. The dynamic performance of the proposed system is evaluated during healthy and open-switch fault operations. Simulation results exhibit the various merits of the proposed SMC-based fault-tolerant strategy.

  1. Interfacial behavior of resistive switching in ITO–PVK–Al WORM memory devices

    International Nuclear Information System (INIS)

    Whitcher, T J; Woon, K L; Wong, W S; Chanlek, N; Nakajima, H; Saisopa, T; Songsiriritthigul, P

    2016-01-01

    Understanding the mechanism of resistive switching in a memory device is fundamental in order to improve device performance. The mechanism of current switching in a basic organic write-once read-many (WORM) memory device is investigated by determining the energy level alignments of indium tin oxide (ITO), poly(9-vinylcarbazole) (PVK) and aluminum (Al) using x-ray and ultraviolet photoelectron spectroscopy, current–voltage characterization and Auger depth profiling. The current switching mechanism was determined to be controlled by the interface between the ITO and the PVK. The electric field applied across the device causes the ITO from the uneven surface of the anode to form metallic filaments through the PVK, causing a shorting effect within the device leading to increased conduction. This was found to be independent of the PVK thickness, although the switch-on voltage was non-linearly dependent on the thickness. The formation of these filaments also caused the destruction of the interfacial dipole at the PVK–Al interface. (paper)

  2. High explosive driven plasma opening switches

    International Nuclear Information System (INIS)

    Greene, A.E.; Bowers, R.L.; Brownell, J.H.; Goforth, J.H.; Oliphant, T.A.; Weiss, D.L.

    1983-01-01

    A joint theoretical and experimental effort is underway to understand and improve upon the performance of high explosive driven plasma opening switches such as those first described by Pavlovskii et al. We have modeled these switches in both planar and cylindrical geometry using a one dimensional Lagrangian MHD code. This one-dimensional analysis is now essentially complete. It has shown that simple, one-dimensional, compression of the current-carrying channel can explain the observed resistance increases during the time of flight of the HE detonation products. Our calculations imply that ionization plays an important role as an energy sink and the performance of these switches might be improved by a judicious choice of gases. We also predict improved performance by lowering the pressure in the plasma channel. The bulk of our experimental effort to date has been with planar switches. We have worked with current densities of 0.25 to 0.4 MA/cm and have observed resistance increases of 40 to 60 mΩ. Significant resistance increases are observed later than the time of flight of the HE detonation products. We suggest that these resistance increases are due to mixing between the hot plasma and the relatively cooler detonation products. Such mixing is not included in the 1-D, Lagrangian code. We are presently beginning a computational effort with a 2-D Eulerian code. The status of this effort is discussed. Experimentally we have designed an apparatus that will permit us to test the role of different gases and pressures. This system is also in a planar geometry, but the plasma channel is doughnut shaped, permitting us to avoid edge effects associated with the planar rectangular geometry. The first experiments with this design are quite encouraging and the status of this effort is also discussed

  3. Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents

    Science.gov (United States)

    Qi, Yanfei; Zhao, Ce Zhou; Liu, Chenguang; Fang, Yuxiao; He, Jiahuan; Luo, Tian; Yang, Li; Zhao, Chun

    2018-04-01

    In this study, the influence of the Ti and TiN top electrodes on the switching behaviors of the Al2O3/Pt resistive random access memory devices with various compliance currents (CCs, 1-15 mA) has been compared. Based on the similar statistical results of the resistive switching (RS) parameters such as V set/V reset, R HRS/R LRS (measured at 0.10 V) and resistance ratio with various CCs for both devices, the Ti/Al2O3/Pt device differs from the TiN/Al2O3/Pt device mainly in the forming process rather than in the following switching cycles. Apart from the initial isolated state, the Ti/Al2O3/Pt device has the initial intermediate state as well. In addition, its forming voltage is relatively lower. The conduction mechanisms of the ON and OFF state for both devices are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Therefore, with the combined modulations of the CCs and the stop voltages, the TiN/Al2O3/Pt device is more stable for nonvolatile memory applications to further improve the RS performance.

  4. Switch-loop flexibility affects transport of large drugs by the promiscuous AcrB multidrug efflux transporter.

    Science.gov (United States)

    Cha, Hi-jea; Müller, Reinke T; Pos, Klaas M

    2014-08-01

    Multidrug efflux transporters recognize a variety of structurally unrelated compounds for which the molecular basis is poorly understood. For the resistance nodulation and cell division (RND) inner membrane component AcrB of the AcrAB-TolC multidrug efflux system from Escherichia coli, drug binding occurs at the access and deep binding pockets. These two binding areas are separated by an 11-amino-acid-residue-containing switch loop whose conformational flexibility is speculated to be essential for drug binding and transport. A G616N substitution in the switch loop has a distinct and local effect on the orientation of the loop and on the ability to transport larger drugs. Here, we report a distinct phenotypical pattern of drug recognition and transport for the G616N variant, indicating that drug substrates with minimal projection areas of >70 Å(2) are less well transported than other substrates. Copyright © 2014, American Society for Microbiology. All Rights Reserved.

  5. HHV-6A/B Integration and the Pathogenesis Associated with the Reactivation of Chromosomally Integrated HHV-6A/B.

    Science.gov (United States)

    Collin, Vanessa; Flamand, Louis

    2017-06-26

    Unlike other human herpesviruses, human herpesvirus 6A and 6B (HHV-6A/B) infection can lead to integration of the viral genome in human chromosomes. When integration occurs in germinal cells, the integrated HHV-6A/B genome can be transmitted to 50% of descendants. Such individuals, carrying one copy of the HHV-6A/B genome in every cell, are referred to as having inherited chromosomally-integrated HHV-6A/B (iciHHV-6) and represent approximately 1% of the world's population. Interestingly, HHV-6A/B integrate their genomes in a specific region of the chromosomes known as telomeres. Telomeres are located at chromosomes' ends and play essential roles in chromosomal stability and the long-term proliferative potential of cells. Considering that the integrated HHV-6A/B genome is mostly intact without any gross rearrangements or deletions, integration is likely used for viral maintenance into host cells. Knowing the roles played by telomeres in cellular homeostasis, viral integration in such structure is not likely to be without consequences. At present, the mechanisms and factors involved in HHV-6A/B integration remain poorly defined. In this review, we detail the potential biological and medical impacts of HHV-6A/B integration as well as the possible chromosomal integration and viral excision processes.

  6. Scaling experiments on plasma opening switches for inductive energy storage applications

    International Nuclear Information System (INIS)

    Boller, J.R.; Commisso, R.J.; Cooperstein, G.

    1983-01-01

    A new type of fast opening switch for use with pulsed power accelerators is examined. This Plasma Opening Switch (POS) utilizes an injected carbon plasma to conduct large currents (circa 1 MA) for up to 100 ns while a vacuum inductor (circa 100 nH) is charged. The switch is then capable of opening on a short (circa 10 ns) timescale and depositing the stored energy into a load impedance. Output pulse widths and power levels are determined by the storage inductance and the load impedance. The switch operation is studied in detail both analytically and experimentally. Experiments are performed at the 5 kJ stored energy level on the Gamble I generator and at the 50 kJ level on the Gamble II generator. Results of both experiments are reported and the scaling of switch operation is discussed

  7. Intrinsic Channeling of Vortices along the ab Plane in Vicinal YBa2Cu3O7-δ Films

    International Nuclear Information System (INIS)

    Berghuis, P.; Di Bartolomeo, E.; Wagner, G.A.; Evetts, J.E.

    1997-01-01

    We have measured the critical current density j c as a function of the orientation of a magnetic field in vicinal YBa 2 Cu 3 O 7-δ films. When both field and Lorentz force lie within the ab plane, we observe a minimum in j c . At high temperatures, as the c -axis coherence length approaches the ab -plane distance, the minimum in j c could not be observed, indicating that this effect is related to the breakdown of the rectilinear vortex state for fields at a small angle to the ab planes. Our results are the first demonstration of intrinsic channeling of vortex strings along the ab planes. copyright 1997 The American Physical Society

  8. Brand switching and toxic chemicals in cigarette smoke: A national study.

    Science.gov (United States)

    Mendel, Jennifer R; Baig, Sabeeh A; Hall, Marissa G; Jeong, Michelle; Byron, M Justin; Morgan, Jennifer C; Noar, Seth M; Ribisl, Kurt M; Brewer, Noel T

    2018-01-01

    US law requires disclosure of quantities of toxic chemicals (constituents) in cigarette smoke by brand and sub-brand. This information may drive smokers to switch to cigarettes with lower chemical quantities, under the misperception that doing so can reduce health risk. We sought to understand past brand-switching behavior and whether learning about specific chemicals in cigarette smoke increases susceptibility to brand switching. Participants were US adult smokers surveyed by phone (n = 1,151, probability sample) and online (n = 1,561, convenience sample). Surveys assessed whether smokers had ever switched cigarette brands or styles to reduce health risk and about likelihood of switching if the smoker learned their brand had more of a specific chemical than other cigarettes. Chemicals presented were nicotine, carbon monoxide, lead, formaldehyde, arsenic, and ammonia. Past brand switching to reduce health risk was common among smokers (43% in phone survey, 28% in online survey). Smokers who were female, over 25, and current "light" cigarette users were more likely to have switched brands to reduce health risks (all p brand switching based on information about particular chemicals. In both samples, lead, formaldehyde, arsenic, and ammonia led to more susceptibility to switch than nicotine (all p brands or styles to reduce health risks. The majority said they might or would definitely switch brands if they learned their cigarettes had more of a toxic chemical than other brands. Brand switching is a probable unintended consequence of communications that show differences in smoke chemicals between brands.

  9. Simulation and Robust Contol of Antilock Braking System ABS

    Directory of Open Access Journals (Sweden)

    David Jordan DELICHRISTOV

    2009-06-01

    Full Text Available This paper deals with simulation and robust control of Antilock Braking System ABS. The briefly are described the main parts of ABS hydraulic system and control algorithm of ABS. Hydraulic system described here is BOSCH ABS 5.x series. The goal of ABS system is vehicle stability and vehicle steering response when braking. If during the braking occurred slip at one or more wheels from any reason, ABS evaluates this by “brake slip” controller. At this moment ABS is trying to use maximal limits of adhesion between tire and road. It means that is necessary control the differences between braking torque and friction torque , which reacts to the wheel via friction reaction tire-road surface. This is realized through the solenoid valves, which are controls (triggered by on the base of PID controller described further in chapter 4. Presented concept is more or less standard for most of the existing ABS systems. The issue should be applied concept of robust ABS control algorithm, which is specific for every type of ABS.

  10. Microsecond plasma opening switch experiments on GIT-4

    Energy Technology Data Exchange (ETDEWEB)

    Bystritskij, V M; Lisitsyn, I V; Sinebryukhov, A A; Sinebryukhov, V A [Russian Academy of Sciences, Tomsk (Russian Federation). Inst. of Electrophysics; Kim, A A; Kokshenev, V A; Koval` chuk, B M [Russian Academy of Sciences, Tomsk (Russian Federation). High Current Electronics Inst.

    1997-12-31

    The plasma opening switch (POS) operation at the current level up to 2 MA was studied at the terawatt power GIT-4 generator. The experiments are described in which the electrode diameter and the strength of the applied magnetic field were varied, and different plasma sources were used. It is shown that the high voltage / low impedance switch operation can be achieved if the linear current density at the POS cathode does not exceed 20 kA/cm. This value limits the maximum cathode diameter of the magnetically insulated transmission line. The anode diameter is limited by the requirement of no gap closure with a dense electrode plasma. The application of external magnetic field decreases the plasma density necessary for achieving a long POS conduction time operation regime. (J.U.). 1 tab., 4 refs.

  11. Microsecond plasma opening switch experiments on GIT-4

    International Nuclear Information System (INIS)

    Bystritskij, V.M.; Lisitsyn, I.V.; Sinebryukhov, A.A.; Sinebryukhov, V.A.; Kim, A.A.; Kokshenev, V.A.; Koval'chuk, B.M.

    1996-01-01

    The plasma opening switch (POS) operation at the current level up to 2 MA was studied at the terawatt power GIT-4 generator. The experiments are described in which the electrode diameter and the strength of the applied magnetic field were varied, and different plasma sources were used. It is shown that the high voltage / low impedance switch operation can be achieved if the linear current density at the POS cathode does not exceed 20 kA/cm. This value limits the maximum cathode diameter of the magnetically insulated transmission line. The anode diameter is limited by the requirement of no gap closure with a dense electrode plasma. The application of external magnetic field decreases the plasma density necessary for achieving a long POS conduction time operation regime. (J.U.). 1 tab., 4 refs

  12. Saturated Switching Systems

    CERN Document Server

    Benzaouia, Abdellah

    2012-01-01

    Saturated Switching Systems treats the problem of actuator saturation, inherent in all dynamical systems by using two approaches: positive invariance in which the controller is designed to work within a region of non-saturating linear behaviour; and saturation technique which allows saturation but guarantees asymptotic stability. The results obtained are extended from the linear systems in which they were first developed to switching systems with uncertainties, 2D switching systems, switching systems with Markovian jumping and switching systems of the Takagi-Sugeno type. The text represents a thoroughly referenced distillation of results obtained in this field during the last decade. The selected tool for analysis and design of stabilizing controllers is based on multiple Lyapunov functions and linear matrix inequalities. All the results are illustrated with numerical examples and figures many of them being modelled using MATLAB®. Saturated Switching Systems will be of interest to academic researchers in con...

  13. A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

    Directory of Open Access Journals (Sweden)

    Saeid Marjani

    2016-09-01

    Full Text Available In this paper, a silicon–on–insulator (SOI p–n–p–n tunneling field–effect transistor (TFET with a silicon doped hafnium oxide (Si:HfO2 ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3 and strontium bismuth tantalate (SrBi2Ta2O9 provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling barrier width. Compared with the conventional p–n–p–n SOI TFET, the on–state current and switching state current ratio are appreciably increased; and the average subthreshold slope (SS is effectively reduced. The simulation results of Si:HfO2 ferroelectric p–n–p–n SOI TFET show significant improvement in transconductance (∼9.8X enhancement at high overdrive voltage and average subthreshold slope (∼35% enhancement over nine decades of drain current at room temperature, indicating that this device is a promising candidate to strengthen the performance of p–n–p–n and conventional TFET for a switching performance.

  14. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch

    International Nuclear Information System (INIS)

    Hu, Long; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin

    2014-01-01

    Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2 kV is applied, after an exciting optical pulse with energy of 1 μJ arrival, the structure with thickness of 650 μm reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (∼4 kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ∼4 kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed

  15. A Novel Single Phase Hybrid Switched Reluctance Motor Drive System

    DEFF Research Database (Denmark)

    Liang, Jianing; Xu, Guoqing; Jian, Linni

    2011-01-01

    In this paper, a novel single phase hybrid switched reluctance motor(SRM) drive system is proposed. It integrated a single phase hybrid SRM and a novel single phase boost converter. This motor can reduce the number of phase switch. And the permanent magnet which is used in the motor can improve...... the performance and efficiency of SR motor. However, the inherent characteristic of this motor is that the negative torque is very sensitive with the excitation current near the turn-on angle. The slow excitation current limits the torque generation region and reduces the average torque. Therefore, a novel single...... phase boost converter is applied to improve the performance of this motor. It is easy to generate a double dclink voltage and dc-link voltage and switch both of them. The voltage of boost capacitor is self balance, so the protective circuit is not need to consider. The fast excitation mode helps hybrid...

  16. SdAb heterodimer formation using leucine zippers

    Science.gov (United States)

    Goldman, Ellen R.; Anderson, George P.; Brozozog-Lee, P. Audrey; Zabetakis, Dan

    2013-05-01

    Single domain antibodies (sdAb) are variable domains cloned from camel, llama, or shark heavy chain only antibodies, and are among the smallest known naturally derived antigen binding fragments. SdAb derived from immunized llamas are able to bind antigens with high affinity, and most are capable of refolding after heat or chemical denaturation to bind antigen again. We hypothesized that the ability to produce heterodimeric sdAb would enable reagents with the robust characteristics of component sdAb, but with dramatically improved overall affinity through increased avidity. Previously we had constructed multimeric sdAb by genetically linking sdAb that bind non-overlapping epitopes on the toxin, ricin. In this work we explored a more flexible approach; the construction of multivalent binding reagents using multimerization domains. We expressed anti-ricin sdAb that recognize different epitopes on the toxin as fusions with differently charged leucine zippers. When the initially produced homodimers are mixed the leucine zipper domains will pair to produce heterodimers. We used fluorescence resonance energy transfer to confirm heterodimer formation. Surface plasmon resonance, circular dichroism, enzyme linked immunosorbent assays, and fluid array assays were used to characterize the multimer constructs, and evaluate their utility in toxin detection.

  17. Mouse manipulation through single-switch scanning.

    Science.gov (United States)

    Blackstien-Adler, Susie; Shein, Fraser; Quintal, Janet; Birch, Shae; Weiss, Patrice L Tamar

    2004-01-01

    Given the current extensive reliance on the graphical user interface, independent access to computer software requires that users be able to manipulate a pointing device of some type (e.g., mouse, trackball) or be able to emulate a mouse by some other means (e.g., scanning). The purpose of the present study was to identify one or more optimal single-switch scanning mouse emulation strategies. Four alternative scanning strategies (continuous Cartesian, discrete Cartesian, rotational, and hybrid quadrant/continuous Cartesian) were selected for testing based on current market availability as well as on theoretical considerations of their potential speed and accuracy. Each strategy was evaluated using a repeated measures study design by means of a test program that permitted mouse emulation via any one of four scanning strategies in a motivating environment; response speed and accuracy could be automatically recorded and considered in view of the motor, cognitive, and perceptual demands of each scanning strategy. Ten individuals whose disabilities required them to operate a computer via single-switch scanning participated in the study. Results indicated that Cartesian scanning was the preferred and most effective scanning strategy. There were no significant differences between results from the Continuous Cartesian and Discrete Cartesian scanning strategies. Rotational scanning was quite slow with respect to the other strategies, although it was equally accurate. Hybrid Quadrant scanning improved access time but at the cost of fewer correct selections. These results demonstrated the importance of testing and comparing alternate single-switch scanning strategies.

  18. Fundamental studies on the switching in liquid nitrogen environment using vacuum switches for application in future high-temperature superconducting medium-voltage power grids

    International Nuclear Information System (INIS)

    Golde, Karsten

    2016-01-01

    By means of superconducting equipment it is possible to reduce the transmission losses in distribution networks while increasing the transmission capacity. As a result even saving a superimposed voltage level would be possible, which can put higher investment costs compared to conventional equipment into perspective. For operation of superconducting systems it is necessary to integrate all equipment in the cooling circuit. This also includes switchgears. Due to cooling with liquid nitrogen, however, only vacuum switching technology comes into question. Thus, the suitability of vacuum switches is investigated in this work. For this purpose the mechanics of the interrupters is considered first. Material investigations and switching experiments at ambient temperature and in liquid nitrogen supply information on potential issues. For this purpose, a special pneumatic construction is designed, which allows tens of thousands of switching cycles. Furthermore, the electrical resistance of the interrupters is considered. Since the contact system consists almost exclusively of copper, a remaining residual resistance and appropriate thermal losses must be considered. Since they have to be cooled back, an appropriate evaluation is given taking environmental parameters into account. The dielectric strength of vacuum interrupters is considered both at ambient temperature as well as directly in liquid nitrogen. For this purpose different contact distances are set at different interrupter types. A distinction is made between internal and external dielectric strength. Conditioning and deconditioning effects are minimized by an appropriate choice of the test circuit. The current chopping and resulting overvoltages are considered to be one of the few drawbacks of vacuum switching technology. Using a practical test circuit the height of chopping current is determined and compared for different temperatures. Due to strong scattering the evaluation is done using statistical methods. At

  19. Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

    Science.gov (United States)

    Cooper, James A.

    1986-01-01

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  20. Quitting activity and tobacco brand switching: findings from the ITC-4 Country Survey.

    Science.gov (United States)

    Cowie, Genevieve A; Swift, Elena; Partos, Timea; Borland, Ron

    2015-04-01

    Among Australian smokers, to examine associations between cigarette brand switching, quitting activity and possible causal directions by lagging the relationships in different directions. Current smokers from nine waves (2002 to early 2012) of the ITC-4 Country Survey Australian dataset were surveyed. Measures were brand switching, both brand family and product type (roll-your-own versus factory-made cigarettes) reported in adjacent waves, interest in quitting, recent quit attempts, and one month sustained abstinence. Switching at one interval was unrelated to concurrent quit interest. Quit interest predicted switching at the following interval, but the effect disappeared once subsequent quit attempts were controlled for. Recent quit attempts more strongly predicted switching at concurrent (OR 1.34, 95%CI=1.18-1.52, pbrand switching does not affect subsequent quitting. Brand switching does not appear to interfere with quitting. © 2015 Public Health Association of Australia.

  1. Electrode erosion properties of gas spark switches for fast linear transformer drivers

    Science.gov (United States)

    Li, Xiaoang; Pei, Zhehao; Zhang, Yuzhao; Liu, Xuandong; Li, Yongdong; Zhang, Qiaogen

    2017-12-01

    Fast linear transformer drivers (FLTDs) are a popular and potential route for high-power devices employing multiple "bricks" in series and parallel, but they put extremely stringent demands on gas switches. Electrode erosion of FLTD gas switches is a restrictive and unavoidable factor that degrades performance and limits stability. In this paper, we systematically investigated the electrode erosion characteristics of a three-electrode field distortion gas switch under the typical working conditions of FLTD switches, and the discharge current was 7-46 kA with 46-300 ns rise time. A high speed frame camera and a spectrograph were used to capture the expansion process and the spectral emission of the spark channel was used to estimate the current density and the spark temperature, and then the energy fluxes and the external forces on the electrode surface were calculated. A tens of kilo-ampere nanosecond pulse could generate a 1011 W/m2 energy flux injection and 1.3-3.5 MPa external pressure on the electrode surface, resulting in a millimeter-sized erosion crater with the maximum peak height Rz reaching 100 μm magnitude. According to the morphological images by a laser scanning confocal microscope, the erosion crater of a FLTD switch contained three kinds of local morphologies, namely a center boiling region, an overflow region and a sputtering region. In addition, the crater size, the surface roughness, and the mass loss were highly dependent on the current amplitude and the transferred charge. We also observed Morphology Type I and Type II, respectively, with different pulse parameters, which had an obvious influence on surface roughness and mass loss. Finally, the quantitative relationship between the electrode mass loss and the pulse parameter was clarified. The transferred charge and the current amplitude were proved to be the main factors determining the electrode mass loss of a FLTD switch, and a least squares fitting expression for mass loss was also obtained.

  2. AB/sub 5/-catalyzed hydrogen evolution cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Hall, D E; Sawada, T; Shepard, V R; Tsujikawa, Y

    1984-01-01

    The AB/sub 5/ metal compounds are highly efficient hydrogen evolution electrocatalysts in alkaline electrolyte. Three types of AB/sub 5/-catalyzed cathode structures were made, using the hydride-forming AB/sub 5/ compounds in particulate form. Plastic-bonded cathodes containing >90 w/o AB/sub 5/ (finished-weight basis) were the most efficient, giving hydrogen evolution overpotentials (/eta/ /SUB H2/ ) of about 0.05 V at 200 mA cm/sup -2/. However, they tended to swell and shed material during electrolysis. Pressed, sintered cathodes containing 40-70 w/o catalyst in a nickel binder gave /eta/ /SUB H2/ about0.08 V; catalyst retention was excellent. Porous, sintered cathode coatings were made with 30-70 w/o AB/sub 5/ catalyst loadings. Their overpotentials were similar to those of the pressed, sintered cathodes. However, at catalyst loadings below about 40 w/o, high overpotentials characteristic of the nickel binder were observed. The structural and electrochemical properties of the three AB/sub 5/-catalyzed cathodes are discussed.

  3. Electroluminescence Spectrum Shift with Switching Behaviour of Diamond Thin Films

    Institute of Scientific and Technical Information of China (English)

    王小平; 王丽军; 张启仁; 姚宁; 张兵临

    2003-01-01

    We report a special phenomenon on switching behaviour and the electroluminescence (EL) spectrum shift of doped diamond thin films. Nitrogen and cerium doped diamond thin films were deposited on a silicon substrate by microwave plasma-assisted chemical vapour deposition system and other special techniques. An EL device with a three-layer structure of nitrogen doped diamond/cerium doped diamond/SiO2 thin films was made. The EL device was driven by a direct-current power supply. Its EL character has been investigated, and a switching behaviour was observed. The EL light emission colour of diamond films changes from yellow (590nm) to blue (454 nm) while the switching behaviour appears.

  4. Switched capacitor DC-DC converter with switch conductance modulation and Pesudo-fixed frequency control

    DEFF Research Database (Denmark)

    Larsen, Dennis Øland; Vinter, Martin; Jørgensen, Ivan Harald Holger

    A switched capacitor dc-dc converter with frequency-planned control is presented. By splitting the output stage switches in eight segments the output voltage can be regulated with a combination of switching frequency and switch conductance. This allows for switching at predetermined frequencies, 31...

  5. Anomalous temperature dependence of the current in a metal-oxide-polymer resistive switching diode

    NARCIS (Netherlands)

    Gomes, H.L.; Rocha, P.R.F.; Kiazadeh, A.; Leeuw, de D.M.; Meskers, S.C.J.

    2011-01-01

    Metal-oxide polymer diodes exhibit non-volatile resistive switching. The current–voltage characteristics have been studied as a function of temperature. The low-conductance state follows a thermally activated behaviour. The high-conductance state shows a multistep-like behaviour and below 300 K an

  6. Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

    KAUST Repository

    Mayet, Abdulilah M.; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2015-01-01

    © 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

  7. Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

    KAUST Repository

    Mayet, Abdulilah M.

    2015-12-04

    © 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young\\'s modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

  8. Effective switching frequency multiplier inverter

    Science.gov (United States)

    Su, Gui-Jia [Oak Ridge, TN; Peng, Fang Z [Okemos, MI

    2007-08-07

    A switching frequency multiplier inverter for low inductance machines that uses parallel connection of switches and each switch is independently controlled according to a pulse width modulation scheme. The effective switching frequency is multiplied by the number of switches connected in parallel while each individual switch operates within its limit of switching frequency. This technique can also be used for other power converters such as DC/DC, AC/DC converters.

  9. Open-Switch Fault Diagnosis and Fault Tolerant for Matrix Converter with Finite Control Set-Model Predictive Control

    DEFF Research Database (Denmark)

    Peng, Tao; Dan, Hanbing; Yang, Jian

    2016-01-01

    To improve the reliability of the matrix converter (MC), a fault diagnosis method to identify single open-switch fault is proposed in this paper. The introduced fault diagnosis method is based on finite control set-model predictive control (FCS-MPC), which employs a time-discrete model of the MC...... topology and a cost function to select the best switching state for the next sampling period. The proposed fault diagnosis method is realized by monitoring the load currents and judging the switching state to locate the faulty switch. Compared to the conventional modulation strategies such as carrier......-based modulation method, indirect space vector modulation and optimum Alesina-Venturini, the FCS-MPC has known and unchanged switching state in a sampling period. It is simpler to diagnose the exact location of the open switch in MC with FCS-MPC. To achieve better quality of the output current under single open...

  10. Method and apparatus for current-output peak detection

    Science.gov (United States)

    De Geronimo, Gianluigi

    2017-01-24

    A method and apparatus for a current-output peak detector. A current-output peak detector circuit is disclosed and works in two phases. The peak detector circuit includes switches to switch the peak detector circuit from the first phase to the second phase upon detection of the peak voltage of an input voltage signal. The peak detector generates a current output with a high degree of accuracy in the second phase.

  11. Control strategy based on SPWM switching patterns for grid connected photovoltaic inverter

    Science.gov (United States)

    Hassaine, L.; Mraoui, A.

    2017-02-01

    Generally, for lower installation of photovoltaic systems connected to the grid, pulse width modulation (PWM) is a widely used technique for controlling the voltage source inverters injects currents into the grid. The current injected must be sinusoidal with reduced harmonic distortion. In this paper, a digital implementation of a control strategy based on PWM switching patterns for an inverter for photovoltaic system connected to the grid is presented. This strategy synchronize a sinusoidal inverter output current with a grid voltage The digital implementation of the proposed PWM switching pattern when is compared with the conventional one exhibit the advantage: Simplicity, reduction of the memory requirements and power calculation for the control

  12. Instability in time-delayed switched systems induced by fast and random switching

    Science.gov (United States)

    Guo, Yao; Lin, Wei; Chen, Yuming; Wu, Jianhong

    2017-07-01

    In this paper, we consider a switched system comprising finitely or infinitely many subsystems described by linear time-delayed differential equations and a rule that orchestrates the system switching randomly among these subsystems, where the switching times are also randomly chosen. We first construct a counterintuitive example where even though all the time-delayed subsystems are exponentially stable, the behaviors of the randomly switched system change from stable dynamics to unstable dynamics with a decrease of the dwell time. Then by using the theories of stochastic processes and delay differential equations, we present a general result on when this fast and random switching induced instability should occur and we extend this to the case of nonlinear time-delayed switched systems as well.

  13. Optimizing POF/PCF based optical switch for indoor LAN

    International Nuclear Information System (INIS)

    Bhuiyan, M M I; Rashid, M M; Ahmed, Sayem; Bhuiyan, M; Kajihara, M

    2013-01-01

    For indoor local area network (LAN) the Polymer optical fiber (POF) is mostly appropriate, because of its large core diameter and flexible material. A 1×2 optical switch for indoor LAN using POF and a shape memory alloy (SMA) coil actuator with magnetic latches was successfully fabricated and tested. To achieve switching by the movement of a POF, large displacement is necessary because the core diameter is large (e.g., 0.486mm). A SMA coil actuator is used for large displacement and a magnetic latching system is used for fixing the position of the shifted POF. The insertion loss is 0.40 to 0.50dB and crosstalk is more than 50dB without index-matching oil. Switching speed is less than 1s at a driving current of 80mA. A cycling test was performed 1.4 million times. Polymer clad fiber optical (PCF) switch also fabricated and tasted

  14. Genes contribute to the switching dynamics of bistable perception.

    Science.gov (United States)

    Shannon, Robert W; Patrick, Christopher J; Jiang, Yi; Bernat, Edward; He, Sheng

    2011-03-09

    Ordinarily, the visual system provides an unambiguous representation of the world. However, at times alternative plausible interpretations of a given stimulus arise, resulting in a dynamic perceptual alternation of the differing interpretations, commonly referred to as bistable or rivalrous perception. Recent research suggests that common neural mechanisms may be involved in the dynamics of very different types of bistable phenomena. Further, evidence has emerged that genetic factors may be involved in determining the rate of switch for at least one form of bistable perception, known as binocular rivalry. The current study evaluated whether genetic factors contribute to the switching dynamics for distinctly different variants of bistable perception in the same participant sample. Switching rates were recorded for MZ and DZ twin participants in two different bistable perception tasks, binocular rivalry and the Necker Cube. Strong concordance in switching rates across both tasks was evident for MZ but not DZ twins, indicating that genetic factors indeed contribute to the dynamics of multiple forms of bistable perception.

  15. Three-Dimensionally Printed Micro-electromechanical Switches.

    Science.gov (United States)

    Lee, Yongwoo; Han, Jungmin; Choi, Bongsik; Yoon, Jinsu; Park, Jinhee; Kim, Yeamin; Lee, Jieun; Kim, Dae Hwan; Kim, Dong Myong; Lim, Meehyun; Kang, Min-Ho; Kim, Sungho; Choi, Sung-Jin

    2018-05-09

    Three-dimensional (3D) printers have attracted considerable attention from both industry and academia and especially in recent years because of their ability to overcome the limitations of two-dimensional (2D) processes and to enable large-scale facile integration techniques. With 3D printing technologies, complex structures can be created using only a computer-aided design file as a reference; consequently, complex shapes can be manufactured in a single step with little dependence on manufacturer technologies. In this work, we provide a first demonstration of the facile and time-saving 3D printing of two-terminal micro-electromechanical (MEM) switches. Two widely used thermoplastic materials were used to form 3D-printed MEM switches; freely suspended and fixed electrodes were printed from conductive polylactic acid, and a water-soluble sacrificial layer for air-gap formation was printed from poly(vinyl alcohol). Our 3D-printed MEM switches exhibit excellent electromechanical properties, with abrupt switching characteristics and an excellent on/off current ratio value exceeding 10 6 . Therefore, we believe that our study makes an innovative contribution with implications for the development of a broader range of 3D printer applications (e.g., the manufacturing of various MEM devices and sensors), and the work highlights a uniquely attractive path toward the realization of 3D-printed electronics.

  16. Advances in high voltage power switching with GTOs

    International Nuclear Information System (INIS)

    Podlesak, T.F.

    1990-01-01

    The control of high voltage at high power, particularly opening switches, has been difficult in the past. Using gate turnoff thyristors (GTOs) arranged in series enables large currents to be switched at high voltage. The authors report a high voltage opening switch has been successfully demonstrated. This switch uses GTOs in series and successfully operates at voltages higher than the rated voltage of the individual devices. It is believed that this is the first time this has been successfully demonstrated, in that GTOs have been operated in series before, but always in a manner as to not exceed the voltage capability of the individual devices. In short, the devices have not worked together, sharing the voltage, but one device has been operated using several backup devices. Of particular interest is how well the individual devices share the voltage applied to them. Equal voltage sharing between devices is absolutely essential, in order to not exceed the voltage rating of any of the devices in the series chain. This is accomplished at high (microsecond) switching speeds. Thus, the system is useful for high frequency applications as well as high power, making for a flexible circuit system element. This demonstration system is rated at 5 KV and uses 1 KV devices. A larger 24 KV system is under design and will use 4.5 KV devices. In order to design the 24 KV switch, the safe operating area of the large devices must be known thoroughly

  17. Advanced Macro-Model with Pulse-Width Dependent Switching Characteristic for Spin Transfer Torque Based Magnetic-Tunnel-Junction Elements

    Science.gov (United States)

    Sojeong Kim,; Seungjun Lee,; Hyungsoon Shin,

    2010-04-01

    In spin transfer torque (STT)-based magnetic tunnel junction (MTJ), the switching depends on the current pulse-width as well as the magnitude of the switching current. We present an advanced macro-model of an STT-MTJ for a circuit simulator such as HSPICE. The macro-model can simulate the dependence of switching behavior on current pulse-width in an STT-MTJ. An imaginary resistor-capacitor (RC) circuit is adopted to emulate complex timing behavior which cannot be described nicely by existing functions in HSPICE. Simulation results show the resistance-current (R-I) curve and timing behavior is in good agreement with the experimental data.

  18. Preparation, biodistribution, and dosimetry of 188Re-Labeled MoAb ior cea1 and its f(ab')2 fragments by avidin-biotin strategy

    International Nuclear Information System (INIS)

    Ferro-Flores, Guillermina; Pimentel-Gonzalez, Gilmara; Gonzalez-Zavala, Maria Antonia; Murphy, Consuelo Arteaga de; Melendez-Alafort, Laura; Tendilla, Jose I.; Croft, Barbara Y.

    1999-01-01

    The biotinylated monoclonal antibody (MoAb) ior cea1 and its F(ab') 2 fragments were labeled with Re-188 by combination of avidin-biotin strategy. 188 Re-MoAb, 188 Re-MoAb-biotin, 188 Re-F(ab') 2 , and 188 Re-F(ab') 2 -biotin preparations were produced for these studies with specific activities of 1.30±0.18 GBq/mg and from instant freeze-dried kit formulations using ethane-1-hydroxy-1,1-diphosphonic acid (EHDP) as a weak competing ligand. There were no significant differences (p>0.05) between the biodistribution in mice of biotinylated and unbiotinylated 188 Re-labeled immunoconjugates. When avidin was injected as a chase after injection of 188 Re-MoAb-biotin or 188 Re-F(ab') 2 -biotin, the blood radioactivity level decreased approximately 75% (cumulated activity) and the effective dose decreased almost 25% with respect to that of the radioimmunoconjugates in which the chase effect was not used. Our results suggest that 188 Re-labeled biotinylated MoAb ior cea1 and its F(ab') 2 fragments prepared by this method are stable complexes in vivo

  19. Power grid current harmonics mitigation drawn on low voltage rated switching devices with effortless control

    Energy Technology Data Exchange (ETDEWEB)

    Marques, Hugo S.; Anunciada, Victor; Borges, Beatriz V. [Power Electronics Group, Instituto de Telecomunicacoes, Lisbon (Portugal); Instituto Superior Tecnico - Universidade Tecnica de Lisboa, Lisbon (Portugal)

    2010-01-15

    The great majority of the existing hybrid active power filter solutions is normally focused in 3{phi} systems and, in general, concentrates its domain of application in specific loads with deterministic behavior. Because common use grids do not exhibit these characteristics, it is mandatory to develop solutions for more generic scenarios, encouraging the use of less classical hybrid solutions. In fact, due to the widely use of switch mode converters in a great variety of consumer electronics, the problematic of mains current harmonic mitigation is no longer an exclusive matter of 3{phi} systems. The contribution of this paper is to present a shunt hybrid active power filter topology, initially conceived to work in 1{phi} domestic grids, able to operate the inverter at a voltage rate that can be lower than 10% of the mains voltage magnitude, even under nonspecific working conditions. In addition, the results shown in this paper demonstrate that this topology can, without lack of generality, be suitable to medium voltage (1{phi} or 3{phi}) systems. A new control approach for the proposed topology is discussed in this paper. The control method exhibits an extremely simple architecture requiring single point current sensing only, with no need for any kind of reference. Its practical implementation can be fulfilled by using very few, common use, operational amplifiers. The principle of operation, design criteria, simulation predictions and experimental results are presented and discussed. (author)

  20. A prototype switched Ethernet data acquisition system

    International Nuclear Information System (INIS)

    Ye Gaoying; Deng Huichen; Chen Liaoyuan; Liu Li; Wang Xinhui

    1999-01-01

    A prototype switched Ethernet data acquisition system has been built up and successfully operated in HL-1M tokamak experiments. The system is based on a switched high bandwidth Ethernet network with which the CAMAC crates are directly interfaced. It takes the advanced features of LAN switch and Ethernet CAMAC controller (ECC 1365 MK III, HYTEC product) to avoid the rewriting of CAMAC driver for an individual computer system and to ensure high data transmission rate between CAMAC system and host computers on the network. It is a new approach to DAS system architecture and provides a solution for a well-known bottleneck problem in traditional distributed DAS system for fusion research. An average throughput of the test system reaches over 100 Mbps. The system features also an easy and low cost migration from traditional distributed DAS system. In the paper, the hardware configuration, software structure, performance of the system and the method of migrating from current DAS system are discussed in detail. (orig.)

  1. Large-scale ab initio configuration interaction calculations for light nuclei

    International Nuclear Information System (INIS)

    Maris, Pieter; Potter, Hugh; Vary, James P; Aktulga, H Metin; Ng, Esmond G; Yang Chao; Caprio, Mark A; Çatalyürek, Ümit V; Saule, Erik; Oryspayev, Dossay; Sosonkina, Masha; Zhou Zheng

    2012-01-01

    In ab-initio Configuration Interaction calculations, the nuclear wavefunction is expanded in Slater determinants of single-nucleon wavefunctions and the many-body Schrodinger equation becomes a large sparse matrix problem. The challenge is to reach numerical convergence to within quantified numerical uncertainties for physical observables using finite truncations of the infinite-dimensional basis space. We discuss strategies for constructing and solving the resulting large sparse matrix eigenvalue problems on current multicore computer architectures. Several of these strategies have been implemented in the code MFDn, a hybrid MPI/OpenMP Fortran code for ab-initio nuclear structure calculations that can scale to 100,000 cores and more. Finally, we will conclude with some recent results for 12 C including emerging collective phenomena such as rotational band structures using SRG evolved chiral N3LO interactions.

  2. Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications

    International Nuclear Information System (INIS)

    Hang-Bing, Lv; Peng, Zhou; Xiu-Feng, Fu; Ming, Yin; Ya-Li, Song; Li, Tang; Ting-Ao, Tang; Yin-Yin, Lin

    2008-01-01

    Resistive switching characteristics of Cu x O films grown by plasma oxidation process at room temperature are investigated. Both bipolar and unipolar stable resistive switching behaviours are observed and confirmed by repeated current–voltage measurements. It is found that the RESET current is dependent on SET compliance current. The mechanism behind this new phenomenon can be understood in terms of conductive filaments formation/rupture with the contribution of Joule heating

  3. Experimental determination of magnetization curves of switched reluctance motors

    Energy Technology Data Exchange (ETDEWEB)

    Andrada, P.; Martinez, E.; Perat, J.I.; Sanchez, J.A.; Torrent, M. [Universitat Politecnica de Catalunya, UPC, Dept. of Enginyeria Electrica, Vilanova i la Geltru (Spain)

    2000-08-01

    Knowledge of magnetic characteristics or magnetization curves of switched reluctance motors is very important for their design and performance evaluation. A test equipment for determination of magnetisation curves of switched reluctance motors is presented. This test equipment is based on a method of measurement of inductance by means of DC current proposed by C.V. Jones, in which a bridge arrangement is used in order to eliminate resistance effects. The main advantage of this setup is that it is an automatic system controlled by P.C., providing easy and user friendly presentation of test results and reducing measurement time and manual errors. Several switched reluctance motors with different structures have been tested using the proposed equipment, giving a good agreement with other experimental and numerical methods. (orig.)

  4. Study of opening switch characteristics of a plasma focus

    International Nuclear Information System (INIS)

    Rhee, M.J.; Schneider, R.F.

    1985-01-01

    It is shown that a current charged transmission line and an opening switch can be used as an inductive energy storage system to produce a high power pulse. A plasma focus device, in which a transmission line is inserted in series with the capacitor bank and a coaxial gun, is considered as an inductive energy storage system. The m = 0 instability in the plasma focus is utilized as an opening switch and the disrupted plasma column is considered as bipolar diode. The system is described preferably by the transmission line theory rather than the lumped circuit theory. The relationship between the output voltage and the current drop is given by V = ΔIZ, where Z is the characteristic impedance of the transmission line. The current drop ΔI depends on the mismatched load impedance of the plasma diode which is governed by nature of the m = 0 instability

  5. A zero-voltage-switched three-phase interleaved buck converter

    Science.gov (United States)

    Hsieh, Yao-Ching; Huang, Bing-Siang; Lin, Jing-Yuan; Pham, Phu Hieu; Chen, Po-Hao; Chiu, Huang-Jen

    2018-04-01

    This paper proposes a three-phase interleaved buck converter which is composed of three identical paralleled buck converters. The proposed solution has three shunt inductors connected between each other of three basic buck conversion units. With the help of the shunt inductors, the MOSFET parasitic capacitances will resonate to achieve zero-voltage-switching. Furthermore, the decreasing rate of the current through the free-wheeling diodes is limited, and therefore, their reverse-recovery losses can be minimised. The active power switches are controlled by interleaved pulse-width modulation signals to reduce the input and output current ripples. Therefore, the filtering capacitances on the input and output sides can be reduced. The power efficiency is measured to be as high as 98% in experiment with a prototype circuit.

  6. Phase shift PWM with double two-switch bridge for high power capacitor charging

    International Nuclear Information System (INIS)

    Karandikar, U.S.; Singh, Yashpal; Thakurta, A.C.

    2013-01-01

    Pulse power supply systems working at higher voltage and high repetition rate demands for higher power from capacitor chargers. Capacitor charging requirement become more challenging in such cases. In pulse power circuits, energy storage capacitor should be charged to its desired voltage before the next switching occurs. It is discharged within a small time, delivering large pulse power. A capacitor charger has to work with wide load variation repeatedly. Many schemes are used for this purpose. The proposed scheme aims at reducing stresses on switches by reducing peak current and their evils. A high voltage power supply is designed for capacitor charging. The proposed scheme is based on a Phase-Shifted PWM without using any extra component to achieve soft switching. Indirect constant average current capacitor charging is achieved with a simple control scheme. A double two-switch bridge is proposed to enhance reliability. Power supply has been developed to charge a capacitor of 50 μF to 2.5 kV at 25 Hz. (author)

  7. Latching micro optical switch

    Science.gov (United States)

    Garcia, Ernest J; Polosky, Marc A

    2013-05-21

    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  8. Spin-Orbit Torque-Assisted Switching in Magnetic Insulator Thin Films with Perpendicular Magnetic Anisotropy

    Science.gov (United States)

    Wu, Mingzhong

    As an in-plane charge current flows in a heavy metal film with spin-orbit coupling, it produces a torque that can induce magnetization switching in a neighboring ferromagnetic metal film. Such spin-orbit torque (SOT)-induced switching has been studied extensively in recent years and has shown higher efficiency than switching using conventional spin-transfer torque. This presentation reports the SOT-assisted switching in heavy metal/magnetic insulator systems.1 The experiments made use of Pt/BaFe12O19 bi-layered structures. Thanks to its strong spin-orbit coupling, Pt has been widely used to produce pure spin currents in previous studies. BaFe12O19 is an M-type barium hexagonal ferrite and is often referred as BaM. It is one of the few magnetic insulators with strong magneto-crystalline anisotropy and shows an effective uniaxial anisotropy field of about 17 kOe. It's found that the switching response in the BaM film strongly depends on the charge current applied to the Pt film. When a constant magnetic field is applied in the film plane, the charge current in the Pt film can switch the normal component of the magnetization (M⊥) in the BaM film between the up and down states. The current also dictates the up and down states of the remnant magnetization when the in-plane field is reduced to zero. When M⊥ is measured by sweeping an in-plane field, the response manifests itself as a hysteresis loop, which evolves in a completely opposite manner if the sign of the charge current is flipped. When the coercivity is measured by sweeping an out-of-plane field, its value can be reduced or increased by as much as about 500 Oe if an appropriate charge current is applied. 1. P. Li, T. Liu, H. Chang, A. Kalitsov, W. Zhang, G. Csaba, W. Li, D. Richardson, A. Demann, G. Rimal, H. Dey, J. S. Jiang, W. Porod, S. Field, J. Tang, M. C. Marconi, A. Hoffmann, O. Mryasov, and M. Wu, Nature Commun. 7:12688 doi: 10.1038/ncomms12688 (2016).

  9. Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator

    Science.gov (United States)

    Han, Jiahao; Richardella, A.; Siddiqui, Saima A.; Finley, Joseph; Samarth, N.; Liu, Luqiao

    2017-08-01

    The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.

  10. Brand switching and toxic chemicals in cigarette smoke: A national study.

    Directory of Open Access Journals (Sweden)

    Jennifer R Mendel

    Full Text Available US law requires disclosure of quantities of toxic chemicals (constituents in cigarette smoke by brand and sub-brand. This information may drive smokers to switch to cigarettes with lower chemical quantities, under the misperception that doing so can reduce health risk. We sought to understand past brand-switching behavior and whether learning about specific chemicals in cigarette smoke increases susceptibility to brand switching.Participants were US adult smokers surveyed by phone (n = 1,151, probability sample and online (n = 1,561, convenience sample. Surveys assessed whether smokers had ever switched cigarette brands or styles to reduce health risk and about likelihood of switching if the smoker learned their brand had more of a specific chemical than other cigarettes. Chemicals presented were nicotine, carbon monoxide, lead, formaldehyde, arsenic, and ammonia.Past brand switching to reduce health risk was common among smokers (43% in phone survey, 28% in online survey. Smokers who were female, over 25, and current "light" cigarette users were more likely to have switched brands to reduce health risks (all p < .05. Overall, 61-92% of smokers were susceptible to brand switching based on information about particular chemicals. In both samples, lead, formaldehyde, arsenic, and ammonia led to more susceptibility to switch than nicotine (all p < .05.Many US smokers have switched brands or styles to reduce health risks. The majority said they might or would definitely switch brands if they learned their cigarettes had more of a toxic chemical than other brands. Brand switching is a probable unintended consequence of communications that show differences in smoke chemicals between brands.

  11. Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

    International Nuclear Information System (INIS)

    Chou, Po-Chien; Cheng, Stone

    2015-01-01

    Highlights: • We develop TO-257 cascoded GaN switch configuration in power conversion applications. • The normally-off cascode circuit provides 14.6 A/600 V characteristics. • Analysis of resistive and inductive switching performances shown in loaded circuits. • A 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. - Abstract: A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit

  12. Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Po-Chien; Cheng, Stone, E-mail: stonecheng@mail.nctu.edu.tw

    2015-08-15

    Highlights: • We develop TO-257 cascoded GaN switch configuration in power conversion applications. • The normally-off cascode circuit provides 14.6 A/600 V characteristics. • Analysis of resistive and inductive switching performances shown in loaded circuits. • A 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. - Abstract: A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit.

  13. Combustion mode switching with a turbocharged/supercharged engine

    Science.gov (United States)

    Mond, Alan; Jiang, Li

    2015-09-22

    A method for switching between low- and high-dilution combustion modes in an internal combustion engine having an intake passage with an exhaust-driven turbocharger, a crankshaft-driven positive displacement supercharger downstream of the turbocharger and having variable boost controllable with a supercharger bypass valve, and a throttle valve downstream of the supercharger. The current combustion mode and mass air flow are determined. A switch to the target combustion mode is commanded when an operating condition falls within a range of predetermined operating conditions. A target mass air flow to achieve a target air-fuel ratio corresponding to the current operating condition and the target combustion mode is determined. The degree of opening of the supercharger bypass valve and the throttle valve are controlled to achieve the target mass air flow. The amount of residual exhaust gas is manipulated.

  14. Resistive switching in TiO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lin

    2011-10-26

    The continuing improved performance of the digital electronic devices requires new memory technologies which should be inexpensively fabricated for higher integration capacity, faster operation, and low power consumption. Resistive random access memory has great potential to become the front runner as the non volatile memory technology. The resistance states stored in such cell can remain for long time and can be read out none-destructively by a very small electrical pulse. In this work the typically two terminal memory cells containing a thin TiO{sub 2} layer are studied. Polycrystalline TiO{sub 2} thin films are deposited with atomic layer deposition and magnetron reactive sputtering processes, which are both physically and electrically characterized. The resistive switching cells are constructed in a metal/TiO{sub 2}/metal structure. Electroforming process initiate the cell from the beginning good insulator to a real memory cell to program the resistive states. Multilevel resistive bipolar switching controlled by current compliance is the common characteristic observed in these cells, which is potentially to be used as so called multi-bit memory cells to improve the memory capacity. With different top electrodes of Pt, Cu, Ag the resistive switching behaviors are studied. The switching behaviors are different depending on the top metal such as the minimum current compliance, the endurance of the programmed resistance states and the morphology change during the switching. The temperature dependence of different resistance states are investigated. A reduction of the activation energy and their possible conduction mechanisms is discussed on the base of the basic current conduction models. It is found that the resistance state transfers from semiconductor to metallic property with the reducing resistances. The calculated temperature coefficients of their metallic states on the Cu/TiO{sub 2}/Pt and Ag/TiO{sub 2}/Pt are very close to the reported literature data

  15. Avalanche photoconductive switching

    Science.gov (United States)

    Pocha, M. D.; Druce, R. L.; Wilson, M. J.; Hofer, W. W.

    This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV to 35 kV and rise times of 300 to 500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10(exp 3) to over 10(exp 5). Switches with two very different physical configurations and with two different illumination wavelengths (1.06 micrometer, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation.

  16. Avalanche photoconductive switching

    Energy Technology Data Exchange (ETDEWEB)

    Pocha, M.D.; Druce, R.L.; Wilson, M.J.; Hofer, W.W.

    1989-01-01

    This paper describes work being done at Lawrence Livermore National Laboratory on the avalanche mode of operation of laser triggered photoconductive switches. We have been able to generate pulses with amplitudes of 2 kV--35 kV and rise times of 300--500 ps, and with a switching gain (energy of output electrical pulse vs energy of trigger optical pulse) of 10{sup 3} to over 10{sup 5}. Switches with two very different physical configurations and with two different illumination wavelengths (1.06 {mu}m, 890 nm) exhibit very similar behavior. The avalanche switching behavior, therefore, appears to be related to the material parameters rather than the optical wavelength or switch geometry. Considerable further work needs to be done to fully characterize and understand this mode of operation. 3 refs., 6 figs.

  17. Effect of oxide insertion layer on resistance switching properties of copper phthalocyanine

    Science.gov (United States)

    Joshi, Nikhil G.; Pandya, Nirav C.; Joshi, U. S.

    2013-02-01

    Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalocyanine (CuPc) film sandwiched between aluminum (Al) electrodes. Pronounced hysteresis in the I-V curves revealed a resistance switching with on-off ratio of the order of 85%. In order to control the charge injection in the CuPc, nanoscale indium oxide buffer layer was inserted to form Al/CuPc/In2O3/Al device. Analysis of I-V measurements revealed space charge limited switching conduction at the Al/CuPc interface. The traps in the organic layer and charge blocking by oxide insertion layer have been used to explain the absence of resistance switching in the oxide buffer layered memory device cell. Present study offer potential applications for CuPc organic semiconductor in low power non volatile resistive switching memory and logic circuits.

  18. Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches.

    Science.gov (United States)

    Li, Mi; Zhuge, Fei; Zhu, Xiaojian; Yin, Kuibo; Wang, Jinzhi; Liu, Yiwei; He, Congli; Chen, Bin; Li, Run-Wei

    2010-10-22

    The resistive switching (RS) characteristics of a Bi(0.95)La(0.05)FeO(3) (La-BFO) film sandwiched between a Pt bottom electrode and top electrodes (TEs) made of Al, Ag, Cu, and Au have been studied. Devices with TEs made of Ag and Cu showed stable bipolar RS behaviors, whereas those with TEs made of Al and Au exhibited unstable bipolar RS. The Ag/La-BFO/Pt structure showed an on/off ratio of 10(2), a retention time > 10(5) s, and programming voltages TEs under a bias voltage. The maximum current before the reset process (on-to-off switching) was found to increase linearly with the current compliance applied during the set process (off-to-on switching).

  19. Computational methods for ab initio detection of microRNAs

    Directory of Open Access Journals (Sweden)

    Malik eYousef

    2012-10-01

    Full Text Available MicroRNAs are small RNA sequences of 18-24 nucleotides in length, which serve as templates to drive post transcriptional gene silencing. The canonical microRNA pathway starts with transcription from DNA and is followed by processing via the Microprocessor complex, yielding a hairpin structure. Which is then exported into the cytosol where it is processed by Dicer and then incorporated into the RNA induced silencing complex. All of these biogenesis steps add to the overall specificity of miRNA production and effect. Unfortunately, their modes of action are just beginning to be elucidated and therefore computational prediction algorithms cannot model the process but are usually forced to employ machine learning approaches. This work focuses on ab initio prediction methods throughout; and therefore homology-based miRNA detection methods are not discussed. Current ab initio prediction algorithms, their ties to data mining, and their prediction accuracy are detailed.

  20. Transport current anisotropy in oriented grained bulk YBa2Cu3O(x) superconductor

    International Nuclear Information System (INIS)

    Selvamanickam, V.; Salama, K.

    1990-01-01

    The anisotropy in transport current density has been studied on bulk YBa2Cu3O(x) superconductor. The transport current density measurements were performed on oriented grained YBa2Cu3O(x) superconductor with the current aligned at different angles to the a-b plane. The angular dependence of Jc shows a rapid drop when the transport current is misaligned from the a-b plane at small angles and then a slow decrease at higher angles. An anisotropy ratio of about 25 is observed at 77 K and zero field between the Jc along a-b plane and that perpendicular to the plane. 15 refs

  1. A Microcontroller-Based Automatic Transfer Switching System for a ...

    African Journals Online (AJOL)

    Michael

    2015-06-01

    Jun 1, 2015 ... Most industries still employ the manual method of power supply changeover, ... This paper presents a Microcontroller-Based Automatic Transfer Switching System ..... and currently has special research interest in Wireless.

  2. 160-Gb/s Silicon All-Optical Packet Switch for Buffer-less Optical Burst Switching

    DEFF Research Database (Denmark)

    Hu, Hao; Ji, Hua; Pu, Minhao

    2015-01-01

    We experimentally demonstrate a 160-Gb/s Ethernet packet switch using an 8.6-mm-long silicon nanowire for optical burst switching, based on cross phase modulation in silicon. One of the four packets at the bit rate of 160 Gb/s is switched by an optical control signal using a silicon based 1 × 1 all......-optical packet switch. Error free performance (BER silicon packet switch based optical burst switching, which might be desirable for high-speed interconnects within a short...

  3. Digital control of high-frequency switched-mode power converters

    CERN Document Server

    Corradini, Luca; Mattavelli, Paolo; Zane, Regan

    This book is focused on the fundamental aspects of analysis, modeling and design of digital control loops around high-frequency switched-mode power converters in a systematic and rigorous manner Comprehensive treatment of digital control theory for power converters Verilog and VHDL sample codes are provided Enables readers to successfully analyze, model, design, and implement voltage, current, or multi-loop digital feedback loops around switched-mode power converters Practical examples are used throughout the book to illustrate applications of the techniques developed Matlab examples are also

  4. Shark IgW C region diversification through RNA processing and isotype switching.

    Science.gov (United States)

    Zhang, Cecilia; Du Pasquier, Louis; Hsu, Ellen

    2013-09-15

    Sharks and skates represent the earliest vertebrates with an adaptive immune system based on lymphocyte Ag receptors generated by V(D)J recombination. Shark B cells express two classical Igs, IgM and IgW, encoded by an early, alternative gene organization consisting of numerous autonomous miniloci, where the individual gene cluster carries a few rearranging gene segments and one C region, μ or ω. We have characterized eight distinct Ig miniloci encoding the nurse shark ω H chain. Each cluster consists of VH, D, and JH segments and six to eight C domain exons. Two interspersed secretory exons, in addition to the 3'-most C exon with tailpiece, provide the gene cluster with the ability to generate at least six secreted isoforms that differ as to polypeptide length and C domain combination. All clusters appear to be functional, as judged by the capability for rearrangement and absence of defects in the deduced amino acid sequence. We previously showed that IgW VDJ can perform isotype switching to μ C regions; in this study, we found that switching also occurs between ω clusters. Thus, C region diversification for any IgW VDJ can take place at the DNA level by switching to other ω or μ C regions, as well as by RNA processing to generate different C isoforms. The wide array of pathogens recognized by Abs requires different disposal pathways, and our findings demonstrate complex and unique pathways for C effector function diversity that evolved independently in cartilaginous fishes.

  5. Genetics Home Reference: GM2-gangliosidosis, AB variant

    Science.gov (United States)

    ... Resources Genetic Testing (1 link) Genetic Testing Registry: Tay-Sachs disease, variant AB General Information from MedlinePlus (5 links) ... AB variant Activator Deficiency/GM2 Gangliosidosis Activator-deficient Tay-Sachs disease GM2 Activator Deficiency Disease GM2 gangliosidosis, type AB ...

  6. Task Uncertainty Can Account for Mixing and Switch Costs in Task-Switching

    Science.gov (United States)

    Rennie, Jaime L.

    2015-01-01

    Cognitive control is required in situations that involve uncertainty or change, such as when resolving conflict, selecting responses and switching tasks. Recently, it has been suggested that cognitive control can be conceptualised as a mechanism which prioritises goal-relevant information to deal with uncertainty. This hypothesis has been supported using a paradigm that requires conflict resolution. In this study, we examine whether cognitive control during task switching is also consistent with this notion. We used information theory to quantify the level of uncertainty in different trial types during a cued task-switching paradigm. We test the hypothesis that differences in uncertainty between task repeat and task switch trials can account for typical behavioural effects in task-switching. Increasing uncertainty was associated with less efficient performance (i.e., slower and less accurate), particularly on switch trials and trials that afford little opportunity for advance preparation. Interestingly, both mixing and switch costs were associated with a common episodic control process. These results support the notion that cognitive control may be conceptualised as an information processor that serves to resolve uncertainty in the environment. PMID:26107646

  7. Controllability of multi-agent systems with periodically switching topologies and switching leaders

    Science.gov (United States)

    Tian, Lingling; Zhao, Bin; Wang, Long

    2018-05-01

    This paper considers controllability of multi-agent systems with periodically switching topologies and switching leaders. The concept of m-periodic controllability is proposed, and a criterion for m-periodic controllability is established. The effect of the duration of subsystems on controllability is analysed by utilising a property of analytic functions. In addition, the influence of switching periods on controllability is investigated, and an algorithm is proposed to search for the fewest periods to ensure controllability. A necessary condition for m-periodic controllability is obtained from the perspective of eigenvectors of the subsystems' Laplacian matrices. For a system with switching leaders, it is proved that switching-leader controllability is equivalent to multiple-leader controllability. Furthermore, both the switching order and the tenure of agents being leaders have no effect on the controllability. Some examples are provided to illustrate the theoretical results.

  8. Reversible light-controlled conductance switching of azobenzene-based metal/polymer nanocomposites

    International Nuclear Information System (INIS)

    Pakula, Christina; Zaporojtchenko, Vladimir; Strunskus, Thomas; Faupel, Franz; Zargarani, Dordaneh; Herges, Rainer

    2010-01-01

    We present a new concept of light-controlled conductance switching based on metal/polymer nanocomposites with dissolved chromophores that do not have intrinsic current switching ability. Photoswitchable metal/PMMA nanocomposites were prepared by physical vapor deposition of Au and Pt clusters, respectively, onto spin-coated thin poly(methylmethacrylate) films doped with azo-dye molecules. High dye concentrations were achieved by functionalizing the azo groups with tails and branches, thus enhancing solubility. The composites show completely reversible optical switching of the absorption bands upon alternating irradiation with UV and blue light. We also demonstrate reversible light-controlled conductance switching. This is attributed to changes in the metal cluster separation upon isomerization based on model experiments where analogous conductance changes were induced by swelling of the composite films in organic vapors and by tensile stress.

  9. Power quality improvement in highly varying loads using thyristor-switched capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Poshtan, M. [Petroleum Inst., Abu Dhabi (United Arab Emirates). Dept. of Electrical Engineering; Mokhtari, H.; Esmaeili, A. [Sharif Univ. of Technology, Tehran (Iran, Islamic Republic of). Dept. of Electrical Engineering

    2007-07-01

    Ordinary contactor-based-capacitor (CBC) banks may not be able to response quickly enough in highly varying electrical loads such as welding machines or arc furnace loads. Thyristor-switched capacitor (TSC) banks are therefore used to compensate for reactive power of highly varying loads. In this paper, the performance of a TSC was compared to CBC banks. The 2 systems, were also compared in terms of energy saving in transmission systems. Simulations carried out using PSCAD/EMTDC software showed that there was a considerable difference in the performance of the 2 systems. The shortcomings of existing CBC systems include slow response of mechanical switching systems; problem of switching more than one bank into the system; and, voltage/current transients during on-off switching. 3 refs., 6 tabs., 14 figs.

  10. Comparison of patients undergoing switching versus augmentation of antipsychotic medications during treatment for schizophrenia

    Directory of Open Access Journals (Sweden)

    Ascher-Svanum H

    2012-03-01

    Full Text Available Haya Ascher-Svanum, Alan JM Brnabic, Anthony H Lawson, Bruce J Kinon, Virginia L Stauffer, Peter D Feldman, Katarina KelinLilly Research Laboratories, Eli Lilly and Company, Lilly Corporate Center, Indianapolis, Indiana, USAAbstract: It is often difficult to determine whether a patient may best benefit by augmenting their current medication or switching them to another. This post-hoc analysis compares patients’ clinical and functional profiles at the time their antipsychotic medications were either switched or augmented. Adult outpatients receiving oral antipsychotic treatment for schizophrenia were assessed during a 12-month international observational study. Clinical and functional measures were assessed at the time of first treatment switch/augmentation (0–14 days prior and compared between Switched and Augmented patient groups. Due to low numbers of patients providing such data, interpretations are based on effect sizes. Data at the time of change were available for 87 patients: 53 Switched and 34 Augmented. Inadequate response was the primary reason for treatment change in both groups, whereas lack of adherence was more prevalent in the Switched group (26.4% vs 8.8%. Changes in clinical severity from study initiation to medication change were similar, as indicated by Clinical Global Impressions–Severity scores. However, physical and mental component scores of the 12-item Short-Form Health Survey improved in the Augmented group, but worsened in the Switched group. These findings suggest that the patient’s worsening or lack of meaningful improvement prompts clinicians to switch antipsychotic medications, whereas when patients show some improvement, clinicians may be more likely to try bolstering the improvements through augmentation. Current findings are consistent with physicians’ stated reasons for switching versus augmenting antipsychotics in the treatment of schizophrenia. Confirmation of these findings requires further research

  11. EMC considerations for protection of cables against switching effects at secondary side of substations

    Energy Technology Data Exchange (ETDEWEB)

    Heydari, H.; Faghihi, F.; Abbasi, V. [Iran Univ. of Science and Technology, Narmak, Tehran (Iran, Islamic Republic of). Center of Excellence for Power System Automation and Operation

    2007-07-01

    High performance and correct functionality of equipment that operate in high voltage substations during transient states need careful engineering design. To achieve electromagnetic compatibility (EMC) in a system, it is necessary to correct design problems and to use special methods like shielding, grounding and filtering which cause an increase in overall cost. This paper discussed a study of a medium voltage substation whose switching process caused electromagnetic interference to low voltage cables. Three methods of decreasing overvoltage and overcurrent were discussed and compared. Recognition of magnetic fields was accomplished by ANSYS (base on finite element method). In addition, overvoltages during the switching process were calculated by common mode and differential mode equivalent circuit. The purpose of the study was to assist designers and engineers in selecting a suitable method to achieve electromagnetic compatibility in a substation. The paper discussed the amplitude of switching currents; common mode current; and methods of reducing overvoltages and overcurrents. These methods included differential mode current and shielding. It was concluded that several methods exist to protect a substations against electromagnetic interference effects. An important problem is the structure of switching in a substation that determines the strength of electromagnetic interference. A substation designer can chose the best way to achieve EMC by considering a switching structure that depends on system topology and cost function of the selected method. 7 refs., 17 figs.

  12. An electromagnetically actuated fiber optic switch using magnetized ferromagnetic materials

    Science.gov (United States)

    Pandojirao-S, Praveen; Dhaubanjar, Naresh; Phuyal, Pratibha C.; Chiao, Mu; Chiao, J.-C.

    2008-03-01

    This paper presents the design, fabrication and testing of a fiber optic switch actuated electromagnetically. The ferromagnetic gel coated optical fiber is actuated using external electromagnetic fields. The ferromagnetic gel consists of ferromagnetic powders dispersed in epoxy. The fabrication utilizes a simple cost-effective coating setup. A direct fiberto-fiber alignment eliminates the need for complementary optical parts and the displacement of fiber switches the laser coupling. The magnetic characteristics of magnetized ferromagnetic materials are performed using alternating gradient magnetometer and the magnetic hysteresis curves are measured for different ferromagnetic materials including iron, cobalt, and nickel. Optical fiber switches with various fiber lengths are actuated and their static and dynamic responses for the same volume of ferromagnetic gel are summarized. The highest displacement is 1.345 mm with an input current of 260mA. In this paper, the performance of fiber switches with various coating materials is presented.

  13. Impact analysis of tap switch out of step for converter transformer

    Science.gov (United States)

    Hong-yue, ZHANG; Zhen-hua, ZHANG; Zhang-xue, XIONG; Gao-wang, YU

    2017-06-01

    AC transformer load regulation is mainly used to adjust the load side voltage level, improve the quality of power supply, the voltage range is relatively narrow. In DC system, converter transformer is the core equipment of AC and DC power converter and inverter. converter transformer tap adjustment can maintain the normal operation of the converter in small angle range control, the absorption of reactive power, economic operation, valve less stress, valve damping circuit loss, AC / DC harmonic component is also smaller. In this way, the tap switch action is more frequent, and a large range of the tap switch adjustment is required. Converter transformer with a more load voltage regulation switch, the voltage regulation range of the switch is generally 20~30%, the adjustment of each file is 1%~2%. Recently it is often found that the tap switch of Converter Transformers is out of step in Converter station. In this paper, it is analyzed in detail the impact of tap switch out of step for differential protection, overexcitation protection and zero sequence over current protection. Analysis results show that: the tap switch out of step has no effect on the differential protection and the overexcitation protection including the tap switch. But the tap switch out of step has effect on zero sequence overcurrent protection of out of step star-angle converter transformer. The zero sequence overcurrent protection will trip when the tap switch out of step is greater than 3 for out of step star-angle converter transformer.

  14. Resistive switching memory properties of layer-by-layer assembled enzyme multilayers

    International Nuclear Information System (INIS)

    Baek, Hyunhee; Cho, Jinhan; Lee, Chanwoo; Lim, Kwang-il

    2012-01-01

    The properties of enzymes, which can cause reversible changes in currents through redox reactions in solution, are of fundamental and practical importance in bio-electrochemical applications. These redox properties of enzymes are often associated with their charge-trap sites. Here, we demonstrate that reversible changes in resistance in dried lysozyme (LYS) films can be generated by an externally applied voltage as a result of charge trap/release. Based on such changes, LYS can be used as resistive switching active material for nonvolatile memory devices. In this study, cationic LYS and anionic poly(styrene sulfonate) (PSS) layers were alternately deposited onto Pt-coated silicon substrates using a layer-by-layer assembly method. Then, top electrodes were deposited onto the top of LYS/PSS multilayers to complete the fabrication of the memory-like device. The LYS/PSS multilayer devices exhibited typical resistive switching characteristics with an ON/OFF current ratio above 10 2 , a fast switching speed of 100 ns and stable performance. Furthermore, the insertion of insulating polyelectrolytes (PEs) between the respective LYS layers significantly enhanced the memory performance of the devices showing a high ON/OFF current ratio of ∼10 6 and low levels of power consumption. (paper)

  15. Real-World Switching to Riociguat: Management and Practicalities in Patients with PAH and CTEPH.

    Science.gov (United States)

    Gall, Henning; Vachiéry, Jean-Luc; Tanabe, Nobuhiro; Halank, Michael; Orozco-Levi, Mauricio; Mielniczuk, Lisa; Chang, MiKyung; Vogtländer, Kai; Grünig, Ekkehard

    2018-06-01

    A proportion of patients with pulmonary arterial hypertension (PAH) and chronic thromboembolic pulmonary hypertension (CTEPH) do not achieve treatment goals or experience side effects on their current therapy. In such cases, switching patients to a new drug while discontinuing the first may be a viable and appropriate treatment option. CAPTURE was designed to investigate how physicians manage the switching of patients to riociguat in real-world clinical practice. Observations from the study were used to assess whether recommendations in the riociguat prescribing information are reflected in clinical practice. CAPTURE was an international, multicenter, uncontrolled, retrospective chart review that collected data from patients with PAH or inoperable or persistent/recurrent CTEPH who switched to riociguat from another pulmonary hypertension (PH)-targeted medical therapy. The primary objective of the study was to understand the procedure undertaken in real-world clinical practice for patients switching to riociguat. Of 127 patients screened, 125 were enrolled in CAPTURE. The majority of patients switched from a phosphodiesterase type 5 inhibitor (PDE5i) to riociguat and the most common reason for switching was lack of efficacy. Physicians were already using the recommended treatment-free period when switching patients to riociguat from sildenafil, but a slightly longer period than recommended for tadalafil. In line with the contraindication, the majority of patients did not receive riociguat and PDE5i therapy concomitantly. Physicians also followed the recommended dose-adjustment procedure for riociguat. Switching to riociguat from another PH-targeted therapy may be feasible in real-world clinical practice in the context of the current recommendations.

  16. Electric current - frequency converter

    International Nuclear Information System (INIS)

    Kumahara, Tadashi; Kinbana, Setsuro.

    1967-01-01

    Herein disclosed is an improved simple electric current-frequency converter, the input current and output frequency linearity of which is widened to a range of four to five figures while compensating, for temperature. The converter may be used for computor processing and for telemetering the output signals from a nuclear reactor. The converter is an astable multivibrator which includes charging circuits comprising emitter-voltage compensated NPN transistors, a charged voltage detecting circuit of temperature compensated field effect transistors, and a transistor switching circuit for generating switching pulses independent of temperature. The converter exhibited a 0.7% frequency change within a range of 5 - 45 0 C and less than a 0.1% frequency drift after six hours of operation when the input current was maintained constant. (Yamaguchi, T.)

  17. A nonlinear HP-type complementary resistive switch

    Directory of Open Access Journals (Sweden)

    Paul K. Radtke

    2016-05-01

    Full Text Available Resistive Switching (RS is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the latter, high integration densities favor the anti-serial combination of two RS-elements to a single cell, termed the complementary resistive switch (CRS. Motivated by the irregular shape of the filament protruding into the device, we suggest a nonlinearity in the resistance-interpolation function, characterized by a single parameter p. Thereby the original HP-memristor is expanded upon. We numerically simulate and analytically solve this model. Further, the nonlinearity allows for its application to the CRS.

  18. A nonlinear HP-type complementary resistive switch

    Science.gov (United States)

    Radtke, Paul K.; Schimansky-Geier, Lutz

    2016-05-01

    Resistive Switching (RS) is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the latter, high integration densities favor the anti-serial combination of two RS-elements to a single cell, termed the complementary resistive switch (CRS). Motivated by the irregular shape of the filament protruding into the device, we suggest a nonlinearity in the resistance-interpolation function, characterized by a single parameter p. Thereby the original HP-memristor is expanded upon. We numerically simulate and analytically solve this model. Further, the nonlinearity allows for its application to the CRS.

  19. Expression of Cry1Ab and Cry2Ab by a polycistronic transgene with a self-cleavage peptide in rice.

    Directory of Open Access Journals (Sweden)

    Qichao Zhao

    Full Text Available Insect resistance to Bacillus thuringiensis (Bt crystal protein is a major threat to the long-term use of transgenic Bt crops. Gene stacking is a readily deployable strategy to delay the development of insect resistance while it may also broaden insecticidal spectrum. Here, we report the creation of transgenic rice expressing discrete Cry1Ab and Cry2Ab simultaneously from a single expression cassette using 2A self-cleaving peptides, which are autonomous elements from virus guiding the polycistronic viral gene expression in eukaryotes. The synthetic coding sequences of Cry1Ab and Cry2Ab, linked by the coding sequence of a 2A peptide from either foot and mouth disease virus or porcine teschovirus-1, regardless of order, were all expressed as discrete Cry1Ab and Cry2Ab at high levels in the transgenic rice. Insect bioassays demonstrated that the transgenic plants were highly resistant to lepidopteran pests. This study suggested that 2A peptide can be utilized to express multiple Bt genes at high levels in transgenic crops.

  20. Importance of ventricular rate after mode switching during low intensity exercise as assessed by clinical symptoms and ventilatory gas exchange.

    Science.gov (United States)

    Brunner-La Rocca, H P; Rickli, H; Weilenmann, D; Duru, F; Candinas, R

    2000-01-01

    Automatic mode switching from DDD(R) to DDI(R) or VVI(R) pacing modes has improved dual chamber pacing in patients at high risk for supraventricular tachyarrhythmias. However, little is known about the effect of ventricular pacing rate adaptation after mode switching. We conducted a single-blinded, crossover study in 15 patients (58 +/- 21 years) with a DDD pacemaker who had AV block and normal sinus node function to investigate the influence of pacing rate adaptation to intrinsic heart rate during low intensity exercise. Patients performed two tests (A/B) of low intensity treadmill exercise (0.5 W/kg) in randomized order. They initially walked for 6 minutes while paced in DDD mode. The pacing mode was then switched to VVI with a pacing rate of either 70 beats/min (test A) or matched to the intrinsic heart rate (95 +/- 11 beats/min test B). Respiratory gas exchange variables were determined and patients classified the effort before and after mode switching on a Borg scale from 6 to 20. Percentage changes of respiratory gas exchange measurements were significantly larger (O2 consumption: -8.2 +/- 5.0% vs. -0.6 +/- 7.2%; ventilatory equivalent of CO2 exhalation: 5.3 +/- 4.9% vs. 1.5 +/- 4.3%; respiratory exchange ratio: 7.0 +/- 2.2% vs. 3.5 +/- 3.0%; end-tidal CO2: -5.7 +/- 2.9% vs. -1.8 +/- 2.7%; all P rate unadjusted than after adjusted mode switching. Mode switching from DDD to VVI pacing is better tolerated and gas exchange measurements are less influenced if ventricular pacing rate is adjusted to the level of physical activity. Thus, pacing rate adjustment should be considered as part of automatic mode switch algorithms.

  1. Circulating current battery heater

    Science.gov (United States)

    Ashtiani, Cyrus N.; Stuart, Thomas A.

    2001-01-01

    A circuit for heating energy storage devices such as batteries is provided. The circuit includes a pair of switches connected in a half-bridge configuration. Unidirectional current conduction devices are connected in parallel with each switch. A series resonant element for storing energy is connected from the energy storage device to the pair of switches. An energy storage device for intermediate storage of energy is connected in a loop with the series resonant element and one of the switches. The energy storage device which is being heated is connected in a loop with the series resonant element and the other switch. Energy from the heated energy storage device is transferred to the switched network and then recirculated back to the battery. The flow of energy through the battery causes internal power dissipation due to electrical to chemical conversion inefficiencies. The dissipated power causes the internal temperature of the battery to increase. Higher internal temperatures expand the cold temperature operating range and energy capacity utilization of the battery. As disclosed, either fixed frequency or variable frequency modulation schemes may be used to control the network.

  2. Optimal switching using coherent control

    DEFF Research Database (Denmark)

    Kristensen, Philip Trøst; Heuck, Mikkel; Mørk, Jesper

    2013-01-01

    that the switching time, in general, is not limited by the cavity lifetime. Therefore, the total energy required for switching is a more relevant figure of merit than the switching speed, and for a particular two-pulse switching scheme we use calculus of variations to optimize the switching in terms of input energy....

  3. Collective rotation from ab initio theory

    International Nuclear Information System (INIS)

    Caprio, M.A.; Maris, P.; Vary, J.P.; Smith, R.

    2015-01-01

    Through ab initio approaches in nuclear theory, we may now seek to quantitatively understand the wealth of nuclear collective phenomena starting from the underlying internucleon interactions. No-core configuration interaction (NCCI) calculations for p-shell nuclei give rise to rotational bands, as evidenced by rotational patterns for excitation energies, electromagnetic moments and electromagnetic transitions. In this review, NCCI calculations of 7–9 Be are used to illustrate and explore ab initio rotational structure, and the resulting predictions for rotational band properties are compared with experiment. We highlight the robustness of ab initio rotational predictions across different choices for the internucleon interaction. (author)

  4. Ab initio assisted process modeling for Si-based nanoelectronic devices

    International Nuclear Information System (INIS)

    Windl, Wolfgang

    2005-01-01

    In this paper, we discuss concepts and examples of ab initio calculations assisting physics-based process simulation. We focus on how to determine diffusion and reaction constants, where modern methods such as the nudged elastic band method allow a systematic and reliable search for the minimum energy migration path and barrier. We show that once the saddle point is determined, the underlying harmonic transition state theory also allows to calculate the prefactors. The discussed examples include nitrogen diffusion, boron deactivation and boron interface segregation. Finally, some concepts are discussed for future device technologies such as molecular devices, where the currently prevalent multiscale approach (kinetic parameters used in higher level models like diffusion-reaction or kinetic Monte Carlo modeling) would not be sensible anymore. As an example, we described the ab initio temperature-accelerated dynamics modeling of contact formation in carbon nanotube devices

  5. Switch-connected HyperX network

    Science.gov (United States)

    Chen, Dong; Heidelberger, Philip

    2018-02-13

    A network system includes a plurality of sub-network planes and global switches. The sub-network planes have a same network topology as each other. Each of the sub-network planes includes edge switches. Each of the edge switches has N ports. Each of the global switches is configured to connect a group of edge switches at a same location in the sub-network planes. In each of the sub-network planes, some of the N ports of each of the edge switches are connected to end nodes, and others of the N ports are connected to other edge switches in the same sub-network plane, other of the N ports are connected to at least one of the global switches.

  6. Pacemaker reed switch behavior in 0.5, 1.5, and 3.0 Tesla magnetic resonance imaging units: are reed switches always closed in strong magnetic fields?

    Science.gov (United States)

    Luechinger, Roger; Duru, Firat; Zeijlemaker, Volkert A; Scheidegger, Markus B; Boesiger, Peter; Candinas, Reto

    2002-10-01

    MRI is established as an important diagnostic tool in medicine. However, the presence of a cardiac pacemaker is usually regarded as a contraindication for MRI due to safety reasons. The aim of this study was to investigate the state of a pacemaker reed switch in different orientations and positions in the main magnetic field of 0.5-, 1.5-, and 3.0-T MRI scanners. Reed switches used in current pacemakers and ICDs were tested in 0.5-, 1.5-, and 3.0-T MRI scanners. The closure of isolated reed switches was evaluated for different orientations and positions relative to the main magnetic field. The field strengths to close and open the reed switch and the orientation dependency of the closed state inside the main magnetic field were investigated. The measurements were repeated using two intact pacemakers to evaluate the potential influence of the other magnetic components, like the battery. If the reed switches were oriented parallel to the magnetic fields, they closed at 1.0 +/- 0.2 mT and opened at 0.7 +/- 0.2 mT. Two different reed switch behaviors were observed at different magnetic field strengths. In low magnetic fields ( 200 mT), the reed switches opened in 50% of all tested orientations. No difference between the three scanners could be demonstrated. The reed switches showed the same behavior whether they were isolated or an integral part of the pacemakers. The reed switch in a pacemaker or an ICD does not necessarily remain closed in strong magnetic fields at 0.5, 1.5, or 3.0 T and the state of the reed switch may not be predictable with certainty in clinical situations.

  7. Method and device for current driven electric energy conversion

    DEFF Research Database (Denmark)

    2012-01-01

    Device comprising an electric power converter circuit for converting electric energy. The converter circuit comprises a switch arrangement with two or more controllable electric switches connected in a switching configuration and controlled so as to provide a current drive of electric energy from...... configurations such as half bridge buck, full bridge buck, half bridge boost, or full bridge boost. A current driven conversion is advantageous for high efficient energy conversion from current sources such as solar cells or where a voltage source is connected through long cables, e.g. powerline cables for long...... an associated electric source connected to a set of input terminals. This is obtained by the two or more electric swiches being connected and controlled to short-circuit the input terminals during a part of a switching period. Further, a low pass filter with a capacitor and an inductor are provided to low pass...

  8. High current and high power superconducting rectifiers

    International Nuclear Information System (INIS)

    Kate, H.H.J. ten; Bunk, P.B.; Klundert, L.J.M. van de; Britton, R.B.

    1981-01-01

    Results on three experimental superconducting rectifiers are reported. Two of them are 1 kA low frequency flux pumps, one thermally and magnetically switched. The third is a low-current high-frequency magnetically switched rectifier which can use the mains directly. (author)

  9. FreeSWITCH Cookbook

    CERN Document Server

    Minessale, Anthony

    2012-01-01

    This is a problem-solution approach to take your FreeSWITCH skills to the next level, where everything is explained in a practical way. If you are a system administrator, hobbyist, or someone who uses FreeSWITCH on a regular basis, this book is for you. Whether you are a FreeSWITCH expert or just getting started, this book will take your skills to the next level.

  10. Task-set switching under cue-based versus memory-based switching conditions in younger and older adults.

    Science.gov (United States)

    Kray, Jutta

    2006-08-11

    Adult age differences in task switching and advance preparation were examined by comparing cue-based and memory-based switching conditions. Task switching was assessed by determining two types of costs that occur at the general (mixing costs) and specific (switching costs) level of switching. Advance preparation was investigated by varying the time interval until the next task (short, middle, very long). Results indicated that the implementation of task sets was different for cue-based switching with random task sequences and memory-based switching with predictable task sequences. Switching costs were strongly reduced under cue-based switching conditions, indicating that task-set cues facilitate the retrieval of the next task. Age differences were found for mixing costs and for switching costs only under cue-based conditions in which older adults showed smaller switching costs than younger adults. It is suggested that older adults adopt a less extreme bias between two tasks than younger adults in situations associated with uncertainty. For cue-based switching with random task sequences, older adults are less engaged in a complete reconfiguration of task sets because of the probability of a further task change. Furthermore, the reduction of switching costs was more pronounced for cue- than memory-based switching for short preparation intervals, whereas the reduction of switch costs was more pronounced for memory- than cue-based switching for longer preparation intervals at least for older adults. Together these findings suggest that the implementation of task sets is functionally different for the two types of task-switching conditions.

  11. Task uncertainty can account for mixing and switch costs in task-switching.

    Directory of Open Access Journals (Sweden)

    Patrick S Cooper

    Full Text Available Cognitive control is required in situations that involve uncertainty or change, such as when resolving conflict, selecting responses and switching tasks. Recently, it has been suggested that cognitive control can be conceptualised as a mechanism which prioritises goal-relevant information to deal with uncertainty. This hypothesis has been supported using a paradigm that requires conflict resolution. In this study, we examine whether cognitive control during task switching is also consistent with this notion. We used information theory to quantify the level of uncertainty in different trial types during a cued task-switching paradigm. We test the hypothesis that differences in uncertainty between task repeat and task switch trials can account for typical behavioural effects in task-switching. Increasing uncertainty was associated with less efficient performance (i.e., slower and less accurate, particularly on switch trials and trials that afford little opportunity for advance preparation. Interestingly, both mixing and switch costs were associated with a common episodic control process. These results support the notion that cognitive control may be conceptualised as an information processor that serves to resolve uncertainty in the environment.

  12. Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

    Directory of Open Access Journals (Sweden)

    A. Pergament

    2015-01-01

    Full Text Available Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance, is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.

  13. Harmonic Analysis and Mitigation of Low- Frequency Switching Voltage Source Inverter with Auxiliary VSI

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede

    2018-01-01

    The output currents of high-power Voltage Source Inverters (VSIs) are distorted by the switching harmonics and the background harmonics in the grid voltage. This paper presents an active harmonic filtering scheme for high-power, low-frequency switching VSIs with an additional auxiliary VSI. In th...

  14. Oxygen-ion-migration-modulated bipolar resistive switching and complementary resistive switching in tungsten/indium tin oxide/gold memory device

    Science.gov (United States)

    Wu, Xinghui; Zhang, Qiuhui; Cui, Nana; Xu, Weiwei; Wang, Kefu; Jiang, Wei; Xu, Qixing

    2018-06-01

    In this paper, we report our investigation of room-temperature-fabricated tungsten/indium tin oxide/gold (W/ITO/Au) resistive random access memory (RRAM), which exhibits asymmetric bipolar resistive switching (BRS) behavior. The device displays good write/erase endurance and data retention properties. The device shows complementary resistive switching (CRS) characteristics after controlling the compliance current. A WO x layer electrically formed at the W/ITO in the forming process. Mobile oxygen ions within ITO migrate toward the electrode/ITO interface and produce a semiconductor-like layer that acts as a free-carrier barrier. The CRS characteristic here can be elucidated in light of the evolution of an asymmetric free-carrier blocking layer at the electrode/ITO interface.

  15. LCT protective dump-switch tests

    International Nuclear Information System (INIS)

    Parsons, W.M.

    1981-01-01

    Each of the six coils in the Large Coil Task (LCT) has a separate power supply, dump resistor, and switching circuit. Each switching circuit contains five switches, two of which are redundant. The three remaining switches perform separate duties in an emergency dump situation. These three switches were tested to determine their ability to meet the LCT conditions

  16. Shear stiffness in nanolaminar Ti3SiC2 challenges ab initio calculations

    International Nuclear Information System (INIS)

    Kisi, E H; Zhang, J F; Kirstein, O; Riley, D P; Styles, M J; Paradowska, A M

    2010-01-01

    Nanolaminates such as the M n+1 AX n (MAX) phases are a material class with ab initio derived elasticity tensors published for over 250 compounds. We have for the first time experimentally determined the full elasticity tensor of the archetype MAX phase, Ti 3 SiC 2 , using polycrystalline samples and in situ neutron diffraction. The experimental elastic constants show extreme shear stiffness, with c 44 more than five times greater than expected for an isotropic material. Such shear stiffness is quite rare in hexagonal materials and strongly contradicts the predictions of all published MAX phase elastic constants derived from ab initio calculations. It is concluded that second order properties such as elastic moduli derived from ab initio calculations require careful experimental verification. The diffraction technique used currently provides the only method of verification for the elasticity tensor for the majority of new materials where single crystals are not available. (fast track communication)

  17. Development of a piping thickness monitoring system using equipotential switching direct current potential drop method

    International Nuclear Information System (INIS)

    Kyung Ha, Ryu; Na Young, Lee; Il Soon, Hwang

    2007-01-01

    As nuclear power plants age, low alloy steel piping undergoes wall thickness reduction due to Flow Accelerated Corrosion (FAC). Persisting pipe rupture accidents prompted thinned pipe management programs. As a consequence extensive inspection activities are made based on the Ultrasonic Technique (UT). As the inspection points increase, time is needed to cover required inspection areas. In this paper, we present the Wide Range Monitoring (WiRM) concept with Equipotential Switching Direct Current Potential Drop (ES-DCPD) method by which FAC-active areas can be screened for detailed UT inspections. To apply ES-DCPD, we developed an electric resistance network model and electric field model based on Finite Element Analysis (FEA) to verify its feasibility. Experimentally we measured DCPD of the pipe elbow and confirmed the validity using UT inspections. For a more realistic validation test, we designed a high temperature flow test loop with environmental parameters turned for FAC simulation in the laboratory. Using electrochemical monitoring of water chemistry and local flow velocity prediction by computational fluid dynamic model, FAC rate is estimated. Based on the FAC prediction model and the simulation loop test, we plan to demonstrate the applicability of ES-DCPD in the PWR secondary environment. (authors)

  18. Ab initio theory and calculations of X-ray spectra

    International Nuclear Information System (INIS)

    Rehr, J.J.; Kas, J.J.; Prange, M.P.; Sorini, A.P.; Takimoto, Y.; Vila, F.

    2009-01-01

    There has been dramatic progress in recent years both in the calculation and interpretation of various x-ray spectroscopies. However, current theoretical calculations often use a number of simplified models to account for many-body effects, in lieu of first principles calculations. In an effort to overcome these limitations we describe in this article a number of recent advances in theory and in theoretical codes which offer the prospect of parameter free calculations that include the dominant many-body effects. These advances are based on ab initio calculations of the dielectric and vibrational response of a system. Calculations of the dielectric function over a broad spectrum yield system dependent self-energies and mean-free paths, as well as intrinsic losses due to multielectron excitations. Calculations of the dynamical matrix yield vibrational damping in terms of multiple-scattering Debye-Waller factors. Our ab initio methods for determining these many-body effects have led to new, improved, and broadly applicable x-ray and electron spectroscopy codes. (authors)

  19. Effect of monoclonal antibodies (MoAb) to class I and class II HLA antigens on lectin- and MoAb OKT3-induced lymphocyte proliferation.

    Science.gov (United States)

    Akiyama, Y; Zicht, R; Ferrone, S; Bonnard, G D; Herberman, R B

    1985-04-01

    We have examined the effect of several monoclonal antibodies (MoAb) to monomorphic determinants of class II HLA antigens, and MoAb to monomorphic determinants of class I HLA antigens and to beta-2-microglobulin (beta 2-mu) on lectin- and MoAb OKT3-induced proliferation of human peripheral blood mononuclear cells (PBMNC) and cultured T cells (CTC). Some, but not all, anti-class II HLA MoAb inhibited the proliferative response of PBMNC to MoAb OKT3 and pokeweed mitogen (PWM). The degree of inhibitory effect varied considerably. This effect was not limited to anti-class II HLA MoAb since anti-class I HLA MoAb and anti-beta 2-mu MoAb also inhibited MoAb OKT3- or PWM-induced proliferative responses. In contrast, the response of PBMNC to phytohemagglutinin (PHA) and concanavalin A (Con A) was not blocked by any anti-class II HLA MoAb. However, some anti-class II HLA MoAb also inhibited the proliferative response of CTC plus allogeneic peripheral blood adherent accessory cells (AC) to PHA or Con A as well as to MoAb OKT3 or PWM. This may be attributable to the substantially greater class II HLA antigen expression by CTC than by fresh lymphocytes. Pretreatment of either CTC or AC with anti-class II HLA MoAb inhibited OKT3-induced proliferation. In contrast, pretreatment of CTC, but not AC, with anti-class I HLA MoAb inhibited the proliferative response of CTC to OKT3. Pretreatment of CTC with anti-class I HLA MoAb inhibited PHA-, Con A and PWM-induced proliferation, to a greater degree than the anti-class II HLA MoAb. It appears as if lymphocyte activation by different mitogens exhibits variable requirements for the presence of cells expressing major histocompatibility determinants. Binding of Ab to membrane markers may interfere with lymphocyte-AC cooperation, perhaps by inhibiting binding of mitogens to their receptors or by interfering with lymphocyte and AC function. We also have examined the role of class II HLA antigens on CTC by depleting class II HLA-positive cells

  20. Functional brain and age-related changes associated with congruency in task switching

    Science.gov (United States)

    Eich, Teal S.; Parker, David; Liu, Dan; Oh, Hwamee; Razlighi, Qolamreza; Gazes, Yunglin; Habeck, Christian; Stern, Yaakov

    2016-01-01

    Alternating between completing two simple tasks, as opposed to completing only one task, has been shown to produce costs to performance and changes to neural patterns of activity, effects which are augmented in old age. Cognitive conflict may arise from factors other than switching tasks, however. Sensorimotor congruency (whether stimulus-response mappings are the same or different for the two tasks) has been shown to behaviorally moderate switch costs in older, but not younger adults. In the current study, we used fMRI to investigate the neurobiological mechanisms of response-conflict congruency effects within a task switching paradigm in older (N=75) and younger (N=62) adults. Behaviorally, incongruency moderated age-related differences in switch costs. Neurally, switch costs were associated with greater activation in the dorsal attention network for older relative to younger adults. We also found that older adults recruited an additional set of brain areas in the ventral attention network to a greater extent than did younger adults to resolve congruency-related response-conflict. These results suggest both a network and an age-based dissociation between congruency and switch costs in task switching. PMID:27520472

  1. Space-charge-mediated anomalous ferroelectric switching in P(VDF-TrEE) polymer films

    KAUST Repository

    Hu, Weijin

    2014-11-12

    We report on the switching dynamics of P(VDF-TrEE) copolymer devices and the realization of additional substable ferroelectric states via modulation of the coupling between polarizations and space charges. The space-charge-limited current is revealed to be the dominant leakage mechanism in such organic ferroelectric devices, and electrostatic interactions due to space charges lead to the emergence of anomalous ferroelectric loops. The reliable control of ferroelectric switching in P(VDF-TrEE) copolymers opens doors toward engineering advanced organic memories with tailored switching characteristics.

  2. Protective mAbs and Cross-Reactive mAbs Raised by Immunization with Engineered Marburg Virus GPs.

    Directory of Open Access Journals (Sweden)

    Marnie L Fusco

    2015-06-01

    Full Text Available The filoviruses, which include the marburg- and ebolaviruses, have caused multiple outbreaks among humans this decade. Antibodies against the filovirus surface glycoprotein (GP have been shown to provide life-saving therapy in nonhuman primates, but such antibodies are generally virus-specific. Many monoclonal antibodies (mAbs have been described against Ebola virus. In contrast, relatively few have been described against Marburg virus. Here we present ten mAbs elicited by immunization of mice using recombinant mucin-deleted GPs from different Marburg virus (MARV strains. Surprisingly, two of the mAbs raised against MARV GP also cross-react with the mucin-deleted GP cores of all tested ebolaviruses (Ebola, Sudan, Bundibugyo, Reston, but these epitopes are masked differently by the mucin-like domains themselves. The most efficacious mAbs in this panel were found to recognize a novel "wing" feature on the GP2 subunit that is unique to Marburg and does not exist in Ebola. Two of these anti-wing antibodies confer 90 and 100% protection, respectively, one hour post-exposure in mice challenged with MARV.

  3. High frequency Soft Switching Half Bridge Series-Resonant DC-DC Converter Utilizing Gallium Nitride FETs

    DEFF Research Database (Denmark)

    Nour, Yasser; Knott, Arnold; Petersen, Lars Press

    2017-01-01

    The need for efficient, smaller, lighter and cheaper power supply units drive the investigation of using high switching frequency soft switching resonant converters. This work presents an 88% efficient 48V nominal input converter switching at 6 MHz and output power of 21 Watts achieving power...... density of 7 W/cm3 for Power-over-Ethernet LED lighting applications. The switching frequency is used to control the output current delivered to the load resistance. The converter was tested using a constant resistance load. The performance and thermal behavior were investigated and reported in this work....

  4. Switching power supplies with multiple isolated output and unitary power factor with an only switch; Fonte chaveada com multiplas saidas isoladas e fator de potencia unitario com um unico interruptor

    Energy Technology Data Exchange (ETDEWEB)

    Canesin, Carlos Alberto

    1990-09-01

    The analysis and implementation of switching power supplies with multiple output, through the use of the D C/D C Single Ended Primary Inductance Converter - SEPIC is presented. The structure has a single switch mode processing stage, improved input power factor, with the use of the variable current hysteresis control, or, constant on time control. The analysis of the D C/D C SEPIC, output characteristics and computer simulation is presented. A switching power supply practical design and experimental results are presented to demonstrate the validity of the theoretical analysis. (author)

  5. Proposed Suitable Methods to Detect Transient Regime Switching to Improve Power Quality with Wavelet Transform

    Directory of Open Access Journals (Sweden)

    Javad Safaee Kuchaksaraee

    2016-10-01

    Full Text Available The increasing consumption of electrical energy and the use of non-linear loads that create transient regime states in distribution networks is increasing day by day. This is the only reason due to which the analysis of power quality for energy sustainability in power networks has become more important. Transients are often created by energy injection through switching or lightning and make changes in voltage and nominal current. Sudden increase or decrease in voltage or current makes characteristics of the transient regime. This paper shed some lights on the capacitor bank switching, which is one of the main causes for oscillatory transient regime states in the distribution network, using wavelet transform. The identification of the switching current of capacitor bank and the internal fault current of the transformer to prevent the unnecessary outage of the differential relay, it propose a new smart method. The accurate performance of this method is shown by simulation in EMTP and MATLAB (matrix laboratory software.

  6. Simulation of plasma erosion opening switches

    International Nuclear Information System (INIS)

    Mason, R.J.; Jones, M.E.

    1988-01-01

    The plasma erosion opening switch (PEOS) has been studied with the ANTHEM and ISIS implicit simulation codes. The switch consists of plasma fill injected into a transmission line. The plasma initially shorts out the circuit, but eventually it is removed by self-electrical forces, allowing for the delivery of energy to a load. ANTHEM models the plasma by multiple fluids with electron inertia retained, or by the particle-in-cell (PIC) technique. ISIS is an optimized PIC code. Both codes determine electric and magnetic fields by the implicit moment method. This allows for the study of long time full-switch behavior with simulational zone sizes and time steps that are large compared to a Debye length and plasma period, respectively. Thus, the authors have modeled switch behavior at densities ranging from 5 x 10 11 to 5 x 10 14 electrons/cm -3 over drive pulses ranging from 5 to 250 ns. Here, the magnetic field rose linearly from zero to 0.8 or 3.0 Tesla. Switch gaps spanned from 1.0 to 8.0 cm, and inner radii ranged from 0.5 to 20.0 cm. Opening dynamics is shown to depend sensitively on the assumed electron emission thresholds at the cathode, and on the effective conductivity of the anode. The particle simulations predict broader current channels than the multi-fluid calculations - reasons for this are discussed. The effect of numerical diffusion in implicit simulations is examined. The response to realistic load impedances (10 Ohms for Sandia National Laboratory's PBFA II accelerator) of the opening characteristics is described. Advantages from plasma fill near the load are investigated. The action of preset initial magnetic fields aligned with the power flow, and of trigger magnetic fields for controlled removal of the plasma is discussed

  7. Power requirements reducing of FBG based all-optical switching

    Science.gov (United States)

    Scholtz, Ľubomír.; Solanská, Michaela; Ladányi, Libor; Müllerová, Jarmila

    2017-12-01

    Although Fiber Bragg gratings (FBGs) are well known devices, their using as all-optical switching elements has been still examined. Current research is focused on optimization of their properties for their using in future all-optical networks. The main problem are high switching intensities needed for achieving the changes of the transmission state. Over several years switching intensities have been reduced from hundreds of GW/cm2 to tens of MW/cm2 by selecting appropriate gratings and signal parameters or using suitable materials. Two principal nonlinear effects with similar power requirements can result in the bistable transmission/reflection of an input optical pulse. In the self-phase modulation (SPM) regime switching is achieved by the intense probe pulse itself. Using cross-phase modulation (XPM) a strong pump alters the FBG refractive index experienced by a weak probe pulse. As a result of this the detuning of the probe pulse from the center of the photonic band gap occurs. Using of XPM the effect of modulation instability is reduced. Modulation instability which is the main SPM degradation mechanism. We focused on nonlinear FBGs based on chalcogenide glasses which are very often used in various applications. Thanks to high nonlinear parameters chalcogenide glasses are suitable candidates for reducing switching intensities of nonlinear FBGs.

  8. Ab initio study of isomerism in molecular ions Li2AB+ with 10 valence electrons

    International Nuclear Information System (INIS)

    Charkin, O.P.; Mak-Ki, M.L.; Shlojer, P.R.

    1997-01-01

    Ab initio calculations of surfaces of Li 2 AB + molecular ion potential energy with biatomic anions AB - with 10 valence electrons have been made in the framework of approximations MP2/6-31G 1 /HF/6-31G*+ZPE(HF/6-31G*) and MP4SDTQ/631G*//MP2/6-31G*+ZPE(MP2/6-31G*). Influence of electron correlation on the accuracy of calculations of their structural and vibrational characteristics is studied. The following most favourable structures have been found: linear for Li 2 BO + , Li 2 CN + , and bent one for Li 2 BS + , with cations coordinated at different anion atoms; onium one for AlOLi 2 + , AlSLi 2 + , SiNLi 2 + and SiPLi 2 + with both cations at electronegative atom of anion

  9. Problems and solutions of the IFSMTF power and switch system

    International Nuclear Information System (INIS)

    Wood, R.J.; Wintenberg, R.E.; Googe, J.M.; Nickels, L.E.

    1985-01-01

    Solutions have been found for the problems encountered with the coil power and switching systems of the International Fusion Superconducting Magnet Test Facility (IFSMTF). The coil power system provides the filtered dc sources (+- 12 V dc; 25,000 A) for charging and discharging the coils of the IFSMTF experiment. The switching system provides the means of transferring the coil current into a dump resistor when a rapid discharge of a coil is required due to a coil failure (quench) or other system abnormalities

  10. Liposome-based polymer complex as a novel adjuvant: enhancement of specific antibody production and isotype switch

    Directory of Open Access Journals (Sweden)

    Chen CH

    2012-02-01

    Full Text Available Chia-Hung Chen1,*, Yu-Ling Lin1,*, Yen-Ku Liu1, Pei-Juin He2, Ching-Min Lin1, Yi-Han Chiu2, Chang-Jer Wu3, Tian-Lu Cheng4, Shih-Jen Liu5,6,**, Kuang-Wen Liao1,2,**1Institute of Molecular Medicine and Bioengineering, 2Department of Biological Science and Technology, National Chiao Tung University, Hsinchu, 3Department of Food Science, National Taiwan Ocean University, Keelung, 4Department of Biomedical Science and Environmental Biology, Kaohsiung Medical University, Kaohsiung, 5National Institute of Infectious Diseases and Vaccinology, National Health Research Institutes, Miaoli, 6Graduate Institute of Immunology, China Medical University, Taichung, Taiwan, , *Chia-Hung Chen and Yu-Ling Lin contributed equally to this work**Kuang-Wen Liao and Shih-Jen Liu contributed equally to this workAbstract: The aim of vaccination is to induce appropriate immunity against pathogens. Antibody-mediated immunity is critical for protection against many virus diseases, although it is becoming more evident that coordinated, multifunctional immune responses lead to the most effective defense. Specific antibody (Ab isotypes are more efficient at protecting against pathogen invasion in different locations in the body. For example, compared to other Ab isotypes, immunoglobulin (Ig A provides more protection at mucosal areas. In this study, we developed a cationic lipopolymer (liposome-polyethylene glycol-polyethyleneimine complex [LPPC] adjuvant that strongly adsorbs antigens or immunomodulators onto its surface to enhance or switch immune responses. The results demonstrate that LPPC enhances uptake ability, surface marker expression, proinflammatory cytokine release, and antigen presentation in mouse phagocytes. In contrast to Freund's adjuvant, LPPC preferentially activates Th1-immunity against antigens in vivo. With lipopolysaccharides or CpG oligodeoxynucleotides, LPPC dramatically enhances the IgA or IgG2A proportion of total Ig, even in hosts that have developed

  11. Switch on, switch off: stiction in nanoelectromechanical switches

    KAUST Repository

    Wagner, Till J W

    2013-06-13

    We present a theoretical investigation of stiction in nanoscale electromechanical contact switches. We develop a mathematical model to describe the deflection of a cantilever beam in response to both electrostatic and van der Waals forces. Particular focus is given to the question of whether adhesive van der Waals forces cause the cantilever to remain in the \\'ON\\' state even when the electrostatic forces are removed. In contrast to previous studies, our theory accounts for deflections with large slopes (i.e. geometrically nonlinear). We solve the resulting equations numerically to study how a cantilever beam adheres to a rigid electrode: transitions between \\'free\\', \\'pinned\\' and \\'clamped\\' states are shown to be discontinuous and to exhibit significant hysteresis. Our findings are compared to previous results from linearized models and the implications for nanoelectromechanical cantilever switch design are discussed. © 2013 IOP Publishing Ltd.

  12. A Regev-Type Fully Homomorphic Encryption Scheme Using Modulus Switching

    Science.gov (United States)

    Chen, Zhigang; Wang, Jian; Song, Xinxia

    2014-01-01

    A critical challenge in a fully homomorphic encryption (FHE) scheme is to manage noise. Modulus switching technique is currently the most efficient noise management technique. When using the modulus switching technique to design and implement a FHE scheme, how to choose concrete parameters is an important step, but to our best knowledge, this step has drawn very little attention to the existing FHE researches in the literature. The contributions of this paper are twofold. On one hand, we propose a function of the lower bound of dimension value in the switching techniques depending on the LWE specific security levels. On the other hand, as a case study, we modify the Brakerski FHE scheme (in Crypto 2012) by using the modulus switching technique. We recommend concrete parameter values of our proposed scheme and provide security analysis. Our result shows that the modified FHE scheme is more efficient than the original Brakerski scheme in the same security level. PMID:25093212

  13. Simulation and analysis of transient over voltages due to capacitor banks switching

    International Nuclear Information System (INIS)

    Jadid, Sh.; Yazdanpanah, D.

    2002-01-01

    The switching of any capacitor bank produces over voltages. Transient overvoltage will always occur in the switching device, the switching of shunt capacitor bank has become the most common source of transient voltage on power systems. Transient over voltages due to switching the capacitor bands hurt not only to the capacitor banks, but also to other equipment, such as circuit breakers and transformers. Several methods are available for reducing energising transients. These devices include pre-insertion resistors, pre-insertion inductors,synchronous closing, and MOV arresters. However, not all are practical or economical. The other important problem is existence of capacitor banks in presence of harmonics.Capacitors do not produce harmonics;however,the addition of capacitors to the electrical system will change the frequency response characteristics of the system will change the frequency response characteristics of the system, and in some cases can result in magnification of the voltage and current distortion in the system. In other word in presence of harmonic-producing loads,the capacitors used for power factor correction,may cause parallel resonance with the system inductance, so they increase the total harmonic distortion of voltage and current waveforms

  14. Electrical switching in Sb doped Al23Te77 glasses

    Science.gov (United States)

    Pumlianmunga; Ramesh, K.

    2017-08-01

    Bulk glasses (Al23Te77)Sbx (0≤ x≤10) prepared by melt quenching method show a change in switching type from threshold to memory for x≥5. An increase in threshold current (Ith) and a concomitant decrease in threshold voltage (Vth) and resisitivity(ρ) have been observed with the increase of Sb content. Raman spectra of the switched region in memory switching compositions show a red shift with respect to the as prepared glasses whereas in threshold switching compositions no such shift is observed. The magic angle spinning nuclear magnetic resonance (MAS NMR) of 27Al atom shows three different environments for Al ([4]Al, [5]Al and [6]Al). The samples annealed at their respective crystallization temperatures show rapid increase in [4]Al sites by annihilating [5]Al sites. The melts of threshold switching glasses (x≤2.5) quenched in water at room temperature (27 °C) show amorphous structure whereas, the melt of memory switching glasses (x>2.5) solidify into crystalline structure. The higher coordination of Al increases the cross-linking and rigidity. The addition of Sb increases the glass transition(Tg) and decreases the crystallization temperature(Tc). The decrease in the interval between the Tg and Tc eases the transition between the amorphous and crystalline states and improves the memory properties. The temperature rise at the time of switching can be as high as its melting temperature and the material in between the electrodes may melt to form a filament. The filament may consists of temporary (high resistive amorphous) and permanent (high conducting crystalline) units. The ratio between the temporary and the permanent units may decide the switching type. The filament is dominated by the permanent units in memory switching compositions and by the temporary units in threshold switching compositions. The present study suggests that both the threshold and memory switching can be understood by the thermal model and filament formation.

  15. A Novel Four-Step Commutation for Bidirectional Switch Cells of AC-AC Matrix Converter

    DEFF Research Database (Denmark)

    Guo, Yougui; Zeng, Ping; Blaabjerg, Frede

    2012-01-01

    on or off of output current happens on the second and third steps. Here the second step is equal to the third one. This method is implemented with four steps by programming in VHDL language. First, the special flip-flop, 74AHC16373, is obtained by programming so as to make input sector signals, output...... sector ones and active switching time PWM ones synchronize. Second, the required switching states are flexibly realized in the form of the look-up table by programming in VHDL language for 36 switching combinations of input sectors with output ones. Third, the obtained switching states are judged whether...... they need commutation by delayers. Finally, the novel method proposed is implemented by switching sequencers. The simulation results have verified its feasibility....

  16. Control synthesis of switched systems

    CERN Document Server

    Zhao, Xudong; Niu, Ben; Wu, Tingting

    2017-01-01

    This book offers its readers a detailed overview of the synthesis of switched systems, with a focus on switching stabilization and intelligent control. The problems investigated are not only previously unsolved theoretically but also of practical importance in many applications: voltage conversion, naval piloting and navigation and robotics, for example. The book considers general switched-system models and provides more efficient design methods to bring together theory and application more closely than was possible using classical methods. It also discusses several different classes of switched systems. For general switched linear systems and switched nonlinear systems comprising unstable subsystems, it introduces novel ideas such as invariant subspace theory and the time-scheduled Lyapunov function method of designing switching signals to stabilize the underlying systems. For some typical switched nonlinear systems affected by various complex dynamics, the book proposes novel design approaches based on inte...

  17. Design of a Command-Triggered Plasma Opening Switch for Terawatt Applications

    International Nuclear Information System (INIS)

    Savage, Mark E.; Mendel, C.W.; Seidel, David B.

    1999-01-01

    Inductive energy storage systems can have high energy density, lending to smaller, less expensive systems. The crucial element of an inductive energy storage system is the opening switch. This switch must conduct current while energy is stored in an inductor, then open quickly to transfer this energy to a load. Plasma can perform this function. The Plasma Opening Switch (POS) has been studied for more than two decades. Success with the conventional plasma opening switch has been limited. A system designed to significantly improve the performance of vacuum opening switches is described in this paper. The gap cleared of plasma is a rough figure-of-merit for vacuum opening switches. Typical opened gaps of 3 mm are reported for conventional switches. The goal for the system described in this paper is more than 3 cm. To achieve this, the command-triggered POS adds an active opening mechanism, which allows complete separation of conduction and opening. This separation is advantageous because of the widely different time scales of conduction and opening. The detrimental process of magnetic field penetration into the plasma during conduction is less important in this switch. The opening mechanism duration is much shorter than the conduction time, so penetration during opening is insignificant. Opening is accomplished with a fast magnetic field that pushes plasma out of the switch region. Plasma must be removed from the switch region to allow high voltage. This paper describes some processes important during conduction and opening, and show calculations on the trigger requirements. The design of the switch is shown. This system is designed to demonstrate both improved performance and nanosecond output jitter at levels greater than one terawatt. An amplification mechanism is described which reduces the trigger energy. Particle-in-cell simulations of the system are also shown

  18. An Active Trap Filter for Switching Harmonics Attenuation of Low-Pulse-Ratio Inverters

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Loh, Poh Chiang

    2017-01-01

    method has also been proposed for the ATF to better enforce its active switching harmonic bypassing ability. Compared with conventional schemes for controlling active power filters, the proposed method is more readily implemented, since it requires neither current reference generation nor high......-bandwidth current control loop. Moreover, the use of a series LC-filter at its ac-side helps the ATF to reduce its inverter voltage and power ratings. Compensated frequency range of the ATF can hence be enlarged by using a comparably higher switching frequency and a proper step-by-step design procedure...

  19. Permanent magnet motor drives with switched stator windings

    Energy Technology Data Exchange (ETDEWEB)

    Nipp, E.

    1999-06-01

    Permanent magnet (PM) motors are today regarded as an interesting solution for a wide range of inverter-fed variable-speed drives. The generally increased interest in these motors has led to many investigations on their feasibility for vehicle propulsion. Consequently, they are also of interest for traction applications which led to the research project that is presented in this thesis. The most important advantages that are expected in comparison to the state of the art asynchronous motors are lower losses and a higher torque density. Often the field weakening speed range is important, but difficult to obtain with PM machines because the inductance in the direction of the magnetization tends to be low. An alternative can be to switch different coils groups of the stator winding into different configurations. This is the central topic of this thesis. Various aspects of the design of PM motor drives are considered with special attention to the requirements for the application of the switched winding concept. The studies were thereby limited to the inner rotor, radial flux topology. It was found that two winding parts per phase, implying four different winding connections, is the only interesting solution. An advantage of switched windings is that the internal voltage of the machine will never exceed the maximum inverter output, which increases the operation safety. Furthermore the machine design can uncompromisingly be optimized for operation below base speed, which means low inductances implying a large air gap length and thick magnets. A problem with switched windings is that circulating currents can occur. To diminish them, a 2/3 magnet covering of the pole surface must be chosen in combination with a non-salient rotor. Moreover it was found that the eddy current losses in the magnets can reach non-negligible levels and must be considered when designing a drive system. The major drawback of switched stator windings is probably the occurrence of torque

  20. Production of fast switching power thyristors by proton irradiation

    International Nuclear Information System (INIS)

    Sawko, D.C.; Bartko, J.

    1983-01-01

    There are several techniques currently employed by various manufacturers in the fabrication of fast switching power thyristors. Gold doping and irradiation by electron beams are among the more common ones. In all cases, the fast switching capability results from a reduction of the minority carrier lifetime of the host material by the introduction of carrier traps or recombination centers. However, accompanying this beneficial reduction in switching speed is a deleterious increase in forward voltage drop which also results from the introduction of carrier traps. Methods which minimize the voltage drop increase as the switching speed is reduced are highly desirable. One such method would achieve this by introducing the traps or recombination centers into well defined narrow regions where they will be more effective in reducing the switching speed than in increasing the forward voltage drop. Because the proton range-energy relationship in materials is relatively well defined and the lifetime reducing displacements occur near the end of their ranges, the lifetime in silicon can be reduced where desired by the precise control of proton energy. Dual energy proton beams from a tandem Van de Graaff accelerator were used in the experiments to determine whether proton beam irradiations offer advantages over other techniques. This was the subject of the present work. The results indicate that this is the preferred technique for reproducibly and rapidly processing fast switching thyristors with superior characteristics. The experimental procedure is discussed and comparisons are made with electron and neutron irradiated thyristors

  1. AP calculus AB & BC crash course

    CERN Document Server

    Rosebush, J

    2012-01-01

    AP Calculus AB & BC Crash Course - Gets You a Higher Advanced Placement Score in Less Time Crash Course is perfect for the time-crunched student, the last-minute studier, or anyone who wants a refresher on the subject. AP Calculus AB & BC Crash Course gives you: Targeted, Focused Review - Study Only What You Need to Know Crash Course is based on an in-depth analysis of the AP Calculus AB & BC course description outline and actual AP test questions. It covers only the information tested on the exams, so you can make the most of your valuable study time. Written by experienced math teachers, our

  2. Modeling of truck's braking dynamics with ABS

    Directory of Open Access Journals (Sweden)

    Maxym DYACHUK

    2014-09-01

    Full Text Available In the article some questions of ABS simulation on the basis of plane vehicle's dynamics and automatic modeling are considered. The author's algorithm of ABS modulators control is presented.

  3. Matrix product operators, matrix product states, and ab initio density matrix renormalization group algorithms

    Science.gov (United States)

    Chan, Garnet Kin-Lic; Keselman, Anna; Nakatani, Naoki; Li, Zhendong; White, Steven R.

    2016-07-01

    Current descriptions of the ab initio density matrix renormalization group (DMRG) algorithm use two superficially different languages: an older language of the renormalization group and renormalized operators, and a more recent language of matrix product states and matrix product operators. The same algorithm can appear dramatically different when written in the two different vocabularies. In this work, we carefully describe the translation between the two languages in several contexts. First, we describe how to efficiently implement the ab initio DMRG sweep using a matrix product operator based code, and the equivalence to the original renormalized operator implementation. Next we describe how to implement the general matrix product operator/matrix product state algebra within a pure renormalized operator-based DMRG code. Finally, we discuss two improvements of the ab initio DMRG sweep algorithm motivated by matrix product operator language: Hamiltonian compression, and a sum over operators representation that allows for perfect computational parallelism. The connections and correspondences described here serve to link the future developments with the past and are important in the efficient implementation of continuing advances in ab initio DMRG and related algorithms.

  4. Time-resolved High Spectral Resolution Observation of 2MASSW J0746425+200032AB

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ji; Mawet, Dimitri [Department of Astronomy, California Institute of Technology, MC 249-17, 1200 E. California Boulevard, Pasadena, CA 91106 (United States); Prato, Lisa, E-mail: ji.wang@caltech.edu [Lowell Observatory, 1400 West Mars Hill Road, Flagstaff, AZ 86001 (United States)

    2017-03-20

    Many brown dwarfs (BDs) exhibit photometric variability at levels from tenths to tens of percents. The photometric variability is related to magnetic activity or patchy cloud coverage, characteristic of BDs near the L–T transition. Time-resolved spectral monitoring of BDs provides diagnostics of cloud distribution and condensate properties. However, current time-resolved spectral studies of BDs are limited to low spectral resolution ( R ∼ 100) with the exception of the study of Luhman 16 AB at a resolution of 100,000 using the VLT+CRIRES. This work yielded the first map of BD surface inhomogeneity, highlighting the importance and unique contribution of high spectral resolution observations. Here, we report on the time-resolved high spectral resolution observations of a nearby BD binary, 2MASSW J0746425+200032AB. We find no coherent spectral variability that is modulated with rotation. Based on simulations, we conclude that the coverage of a single spot on 2MASSW J0746425+200032AB is smaller than 1% or 6.25% if spot contrast is 50% or 80% of its surrounding flux, respectively. Future high spectral resolution observations aided by adaptive optics systems can put tighter constraints on the spectral variability of 2MASSW J0746425+200032AB and other nearby BDs.

  5. Low-Crosstalk Composite Optical Crosspoint Switches

    Science.gov (United States)

    Pan, Jing-Jong; Liang, Frank

    1993-01-01

    Composite optical switch includes two elementary optical switches in tandem, plus optical absorbers. Like elementary optical switches, composite optical switches assembled into switch matrix. Performance enhanced by increasing number of elementary switches. Advantage of concept: crosstalk reduced to acceptably low level at moderate cost of doubling number of elementary switches rather than at greater cost of tightening manufacturing tolerances and exerting more-precise control over operating conditions.

  6. Design and development of indigenous seismic switch for nuclear reactors

    International Nuclear Information System (INIS)

    Varghese, Shiju; Shah, Jay; Limaye, P.K.; Soni, N.L; Patel, R.J.

    2016-01-01

    After Fukushima incident it has become a regulatory requirement to have automatic reactor trip on detection of earthquake beyond OBE level. Seismic Switches that meets the technical specifications required for nuclear reactor use were not available in the market. Hence, on Nuclear Power Corporation of India Ltd (NPCIL's) request, Refuelling Technology Division, BARC has developed Seismic Switches (electronic earthquake detectors) required for this application. Functionality of the system was successfully tested using a Shake Table. Two different designs of seismic switches have been developed. One is a microcontroller based system (digital) and the other is fully analogue electronics (analog) based. These switches are designed to meet the technical requirements of Class IA systems of nuclear reactors. It is also designed to meet other qualification tests such as EMI/EMC, climatic, vibration, and reliability requirements. In addition to nuclear industry seismic switches are having potential use in oil and gas, power plants, buildings and other industrial installations. These technologies are currently available for technology transfer and details are published in BARC website. This paper describes the requirements, principle of operation and features and testing of the developed systems. (author)

  7. Comparison of identical and functional Igh alleles reveals a nonessential role for Eμ in somatic hypermutation and class-switch recombination.

    Science.gov (United States)

    Li, Fubin; Yan, Yi; Pieretti, Joyce; Feldman, Danielle A; Eckhardt, Laurel A

    2010-11-15

    Somatic hypermutation (SHM), coupled with Ag selection, provides a mechanism for generating Abs with high affinity for invading pathogens. Class-switch recombination (CSR) ensures that these Abs attain pathogen-appropriate effector functions. Although the enzyme critical to both processes, activation-induced cytidine deaminase, has been identified, it remains unclear which cis-elements within the Ig loci are responsible for recruiting activation-induced cytidine deaminase and promoting its activity. Studies showed that Ig gene-transcription levels are positively correlated with the frequency of SHM and CSR, making the intronic, transcriptional enhancer Eμ a likely contributor to both processes. Tests of this hypothesis yielded mixed results arising, in part, from the difficulty in studying B cell function in mice devoid of Eμ. In Eμ's absence, V(H) gene assembly is dramatically impaired, arresting B cell development. The current study circumvented this problem by modifying the murine Igh locus through simultaneous insertion of a fully assembled V(H) gene and deletion of Eμ. The behavior of this allele was compared with that of a matched allele carrying the same V(H) gene but with Eμ intact. Although IgH transcription was as great or greater on the Eμ-deficient allele, CSR and SHM were consistently, but modestly, reduced relative to the allele in which Eμ remained intact. We conclude that Eμ contributes to, but is not essential for, these complex processes and that its contribution is not as a transcriptional enhancer but, rather, is at the level of recruitment and/or activation of the SHM/CSR machinery.

  8. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  9. Common and distinct neural mechanisms of attentional switching and response conflict.

    Science.gov (United States)

    Kim, Chobok; Johnson, Nathan F; Gold, Brian T

    2012-08-21

    The human capacities for overcoming prepotent actions and flexibly switching between tasks represent cornerstones of cognitive control. Functional neuroimaging has implicated a diverse set of brain regions contributing to each of these cognitive control processes. However, the extent to which attentional switching and response conflict draw on shared or distinct neural mechanisms remains unclear. The current study examined the neural correlates of response conflict and attentional switching using event-related functional magnetic resonance imaging (fMRI) and a fully randomized 2×2 design. We manipulated an arrow-word version of the Stroop task to measure conflict and switching in the context of a single task decision, in response to a common set of stimuli. Under these common conditions, both behavioral and imaging data showed significant main effects of conflict and switching but no interaction. However, conjunction analyses identified frontal regions involved in both switching and response conflict, including the dorsal anterior cingulate cortex (dACC) and left inferior frontal junction. In addition, connectivity analyses demonstrated task-dependent functional connectivity patterns between dACC and inferior temporal cortex for attentional switching and between dACC and posterior parietal cortex for response conflict. These results suggest that the brain makes use of shared frontal regions, but can dynamically modulate the connectivity patterns of some of those regions, to deal with attentional switching and response conflict. Copyright © 2012 Elsevier B.V. All rights reserved.

  10. Organization of the channel-switching process in parallel computer systems based on a matrix optical switch

    Science.gov (United States)

    Golomidov, Y. V.; Li, S. K.; Popov, S. A.; Smolov, V. B.

    1986-01-01

    After a classification and analysis of electronic and optoelectronic switching devices, the design principles and structure of a matrix optical switch is described. The switching and pair-exclusion operations in this type of switch are examined, and a method for the optical switching of communication channels is elaborated. Finally, attention is given to the structural organization of a parallel computer system with a matrix optical switch.

  11. GaN transistors on Si for switching and high-frequency applications

    Science.gov (United States)

    Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

    2014-10-01

    In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

  12. Temperature induced complementary switching in titanium oxide resistive random access memory

    Energy Technology Data Exchange (ETDEWEB)

    Panda, D., E-mail: dpanda@nist.edu [Department of Electronics Engineering, National Institute of Science and Technology, Berhampur, Odisha 761008 (India); Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Simanjuntak, F. M.; Tseng, T.-Y. [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2016-07-15

    On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

  13. Thickness-dependent resistance switching in Cr-doped SrTiO3

    Science.gov (United States)

    Kim, TaeKwang; Du, Hyewon; Kim, Minchang; Seo, Sunae; Hwang, Inrok; Kim, Yeonsoo; Jeon, Jihoon; Lee, Sangik; Park, Baeho

    2012-09-01

    The thickness-dependent bipolar resistance-switching behavior was investigated for epitaxiallygrown Cr-doped SrTiO3 (Cr-STO). All the pristine devices of different thickness showed polarity-independent symmetric current-voltage characteristic and the same space-charge-limited conduction mechanism. However, after a forming process, the resultant conduction and switching phenomena were significantly different depending on the thickness of Cr-STO. The forming process itself was highly influenced by resistance value of each pristine device. Based on our results, we suggest that the resistance-switching mechanism in Cr-STO depends not only on the insulating material's composition or the contact metal as previously reported but also on the initial resistance level determined by the geometry and the quality of the insulating material. The bipolar resistance-switching behaviors in oxide materials of different thicknesses exhibit mixed bulk and interface switching. This indicates that efforts in resistance-based memory research should be focused on scalability or process method to control a given oxide material in addition to material type and device structure.

  14. Optimal Transmission Line Switching under Geomagnetic Disturbances

    International Nuclear Information System (INIS)

    Lu, Mowen; Nagarajan, Harsha; Yamangil, Emre; Bent, Russell; Backhaus, Scott

    2017-01-01

    Recently, there have been increasing concerns about how geomagnetic disturbances (GMDs) impact electrical power systems. Geomagnetically-induced currents (GICs) can saturate transformers, induce hot spot heating and increase reactive power losses. These effects can potentially cause catastrophic damage to transformers and severely impact the ability of a power system to deliver power. To address this problem, we develop a model of GIC impacts to power systems that includes 1) GIC thermal capacity of transformers as a function of normal Alternating Current (AC) and 2) reactive power losses as a function of GIC. We also use this model to derive an optimization problem that protects power systems from GIC impacts through line switching, generator dispatch, and load shedding. We then employ state-of-the-art convex relaxations of AC power flow equations to lower bound the objective. We demonstrate the approach on a modified RTS96 system and UIUC 150-bus system and show that line switching is an effective means to mitigate GIC impacts. We also provide a sensitivity analysis of decisions with respect to GMD direction.

  15. Cultural Frame Switching and Emotion among Mexican Americans

    Science.gov (United States)

    Kreitler, Crystal Mata; Dyson, Kara S.

    2016-01-01

    Recent evidence indicates that bicultural individuals shift between interpretive frames rooted in different cultures in response to cues encountered in a given situation. The explanation for these shifts has been labeled "cultural frame switching." The current research sought to investigate the effect of priming culture among Mexican…

  16. Fast switching and signature of efficient domain wall motion driven by spin-orbit torques in a perpendicular anisotropy magnetic insulator/Pt bilayer

    Science.gov (United States)

    Avci, Can Onur; Rosenberg, Ethan; Baumgartner, Manuel; Beran, Lukáš; Quindeau, Andy; Gambardella, Pietro; Ross, Caroline A.; Beach, Geoffrey S. D.

    2017-08-01

    We report fast and efficient current-induced switching of a perpendicular anisotropy magnetic insulator thulium iron garnet by using spin-orbit torques (SOT) from the Pt overlayer. We first show that, with quasi-DC (10 ms) current pulses, SOT-induced switching can be achieved with an external field as low as 2 Oe, making TmIG an outstanding candidate to realize efficient switching in heterostructures that produce moderate stray fields without requiring an external field. We then demonstrate deterministic switching with fast current pulses (≤20 ns) with an amplitude of ˜1012 A/m2, similar to all-metallic structures. We reveal that, in the presence of an initially nucleated domain, the critical switching current is reduced by up to a factor of five with respect to the fully saturated initial state, implying efficient current-driven domain wall motion in this system. Based on measurements with 2 ns-long pulses, we estimate the domain wall velocity of the order of ˜400 m/s per j = 1012 A/m2.

  17. Ab initio study of isomerism of Li2AB2 molecules and Li2AB2+ ions with 16 valent electrons

    International Nuclear Information System (INIS)

    Charkin, O.P.; Klimenko, N.M.; MakKi, M.L.

    2000-01-01

    In the framework of MP2(6-31*//HF/6-31G + ZPE(HF/6-31G*) and MP4SDTQ/6-31G*//MP2/6-31G* + ZPE(MP2/6-31G*) approximations ab initio calculations of surfaces of potential energy of molecules of lithium salts of Li 2 AB 2 (Li 2 BeO 2 , L 2 MgO 2 , Li 2 BeS 2 , Li 2 MgS 2 , Li 2 CN 2 , Li 2 SiN 2 , Li 2 CP 2 ) type and ions of Li 2 AB 2 + (Li 2 BO 2 + , Li 2 AlO 2 + , Li 2 BS 2 + , Li 2 AlS 2 + , Li 2 N 3 + , Li 2 PN 2 + , Li 2 P 3 + ) type with 16 valent electrons are done. For oxide and nitride systems global minimum corresponds to symmetric linear structure D ∞h and for their sulfide and phosphorus analogues curved plane or unplane (C 2 ) structure with bond angle φ(LBA)=90-110 Deg are preferable. Equilibrium geometric parameters, relative energies and energies of isomer decomposition, frequencies and IR-intensities of normal vibrations are determined [ru

  18. Atomic switch networks as complex adaptive systems

    Science.gov (United States)

    Scharnhorst, Kelsey S.; Carbajal, Juan P.; Aguilera, Renato C.; Sandouk, Eric J.; Aono, Masakazu; Stieg, Adam Z.; Gimzewski, James K.

    2018-03-01

    Complexity is an increasingly crucial aspect of societal, environmental and biological phenomena. Using a dense unorganized network of synthetic synapses it is shown that a complex adaptive system can be physically created on a microchip built especially for complex problems. These neuro-inspired atomic switch networks (ASNs) are a dynamic system with inherent and distributed memory, recurrent pathways, and up to a billion interacting elements. We demonstrate key parameters describing self-organized behavior such as non-linearity, power law dynamics, and multistate switching regimes. Device dynamics are then investigated using a feedback loop which provides control over current and voltage power-law behavior. Wide ranging prospective applications include understanding and eventually predicting future events that display complex emergent behavior in the critical regime.

  19. Very high plasma switches. Basic plasma physics and switch technology

    International Nuclear Information System (INIS)

    Doucet, H.J.; Roche, M.; Buzzi, J.M.

    1988-01-01

    A review of some high power switches recently developed for very high power technology is made with a special attention to the aspects of plasma physics involved in the mechanisms, which determine the limits of the possible switching parameters

  20. High-speed packet switching network to link computers

    CERN Document Server

    Gerard, F M

    1980-01-01

    Virtually all of the experiments conducted at CERN use minicomputers today; some simply acquire data and store results on magnetic tape while others actually control experiments and help to process the resulting data. Currently there are more than two hundred minicomputers being used in the laboratory. In order to provide the minicomputer users with access to facilities available on mainframes and also to provide intercommunication between various experimental minicomputers, CERN opted for a packet switching network back in 1975. It was decided to use Modcomp II computers as switching nodes. The only software to be taken was a communications-oriented operating system called Maxcom. Today eight Modcomp II 16-bit computers plus six newer Classic minicomputers from Modular Computer Services have been purchased for the CERNET data communications networks. The current configuration comprises 11 nodes connecting more than 40 user machines to one another and to the laboratory's central computing facility. (0 refs).