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Sample records for 14-crystal germanium array

  1. A Low Noise 64x64 Germanium Array for Far IR Astronomy Project

    National Aeronautics and Space Administration — We propose to develope a 64x64 far infrared germanium focal-plane array with the following key design features: 1- Four top-illuminated, 32x32 germanium sub-arrays...

  2. Performance of a compact multi-crystal high-purity germanium detector array for measuring coincident gamma-ray emissions

    Howard, Chris; Daigle, Stephen; Buckner, Matt [University of North Carolina at Chapel Hill, Chapel Hill, NC 27599 (United States); Triangle Universities Nuclear Laboratory, Durham, NC 27708 (United States); Erikson, Luke E.; Runkle, Robert C. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Stave, Sean C., E-mail: Sean.Stave@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Champagne, Arthur E.; Cooper, Andrew; Downen, Lori [University of North Carolina at Chapel Hill, Chapel Hill, NC 27599 (United States); Triangle Universities Nuclear Laboratory, Durham, NC 27708 (United States); Glasgow, Brian D. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Kelly, Keegan; Sallaska, Anne [University of North Carolina at Chapel Hill, Chapel Hill, NC 27599 (United States); Triangle Universities Nuclear Laboratory, Durham, NC 27708 (United States)

    2015-05-21

    The Multi-sensor Airborne Radiation Survey (MARS) detector is a 14-crystal array of high-purity germanium (HPGe) detectors housed in a single cryostat. The array was used to measure the astrophysical S-factor for the {sup 14}N(p,γ){sup 15}O{sup ⁎} reaction for several transition energies at an effective center-of-mass energy of 163 keV. Owing to the granular nature of the MARS detector, the effect of gamma-ray summing was greatly reduced in comparison to past experiments which utilized large, single-crystal detectors. The new S-factor values agree within their uncertainties with the past measurements. Details of the analysis and detector performance are presented.

  3. Performance of A Compact Multi-crystal High-purity Germanium Detector Array for Measuring Coincident Gamma-ray Emissions

    Howard, Chris [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Daigle, Stephen [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Buckner, Matt [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Erikson, Luke E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Runkle, Robert C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Stave, Sean C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Champagne, Art [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Cooper, Andrew [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Downen, Lori [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Glasgow, Brian D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kelly, Keegan [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States); Sallaska, Anne [Univ. of North Carolina, Chapel Hill, NC (United States); Triangle Univ. Nuclear Lab., Durham, NC (United States)

    2015-02-18

    The Multi-sensor Airborne Radiation Survey (MARS) detector is a 14-crystal array of high-purity germanium (HPGe) detectors housed in a single cryostat. The array was used to measure the astrophysical S-factor for the 14N(p,γ)15O* reaction for several transition energies at an effective center of mass energy of 163 keV. Owing to the segmented nature of the MARS detector, the effect of gamma-ray summing was greatly reduced in comparison to past experiments which utilized large, single-crystal detectors. The new S-factor values agree within the uncertainties with the past measurements. Details of the analysis and detector performance will be presented.

  4. A Low Noise 64x64 Germanium Array for Far IR Astronomy Project

    National Aeronautics and Space Administration — We propose to investigate the feasibility of developing a 64x64 far infrared germanium focal-plane array with the following key design features: 1- Four...

  5. Development of silicon-germanium visible-near infrared arrays

    Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Haldar, Pradeep; Lewis, Jay S.; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Puri, Yash R.; Sood, Ashok K.

    2016-05-01

    Photodetectors based on germanium which do not require cooling and can provide good near-infrared (NIR) detection performance offer a low-cost alternative to conventional infrared sensors based on material systems such as InGaAs, InSb, and HgCdTe. As a result of the significant difference in thermal expansion coefficients between germanium and silicon, tensile strain incorporated into Ge epitaxial layers deposited on Si utilizing specialized growth processes can extend the operational range of detection to 1600 nm and longer wavelengths. We have fabricated Ge based PIN photodetectors on 300 mm diameter Si wafers to take advantage of high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology. This device fabrication process involves low temperature epitaxial deposition of Ge to form a thin p+ (boron) Ge seed/buffer layer, and subsequent higher temperature deposition of a thicker Ge intrinsic layer. This is followed by selective ion implantation of phosphorus of various concentrations to form n+ Ge regions, deposition of a passivating oxide cap, and then top copper contacts to complete the PIN detector devices. Various techniques including transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have been employed to characterize the material and structural properties of the epitaxially grown layers and fabricated detector devices, and these results are presented. The I-V response of the photodetector devices with and without illumination was also measured, for which the Ge based photodetectors consistently exhibited low dark currents of around ~1 nA at -1 V bias.

  6. Germanium nanopyramid arrays showing near-100% absorption in the visible regime

    Qi Han[1; Yongqi Fu[1; Lei Jin[1; Jingjing Zhao[2; Zongwei Xu[3; Fengzhou Fang[3; Jingsong Gao[2; Weixing Yu[4

    2015-01-01

    Solar energy is regarded as one of the most plentiful sources of renewable energy. An extraordinary light-harvesting property of a germanium periodic nanopyramid array is reported in this Letter. Both our theoretical and experimental results demonstrate that the nanopyramid array can achieve perfect broadband absorption from 500- to 800-nm wavelength. Especially in the visible regime, the experimentally measured absorption can even reach 100%. Further analyses reveal that the intrinsic antireflection effect and slow-light waveguide mode play an important role in the ultra-high absorption, which is helpful for the research and development of photovoltaic devices.

  7. Infrared microspectroscopic imaging using a large radius germanium internal reflection element and a focal plane array detector.

    Patterson, Brian M; Havrilla, George J; Marcott, Curtis; Story, Gloria M

    2007-11-01

    Previously, we established the ability to collect infrared microspectroscopic images of large areas using a large radius hemisphere internal reflection element (IRE) with both a single point and a linear array detector. In this paper, preliminary work in applying this same method to a focal plane array (FPA) infrared imaging system is demonstrated. Mosaic tile imaging using a large radius germanium hemispherical IRE on a FPA Fourier transform infrared microscope imaging system can be used to image samples nearly 1.5 mm x 2 mm in size. A polymer film with a metal mask is imaged using this method for comparison to previous work. Images of hair and skin samples are presented, highlighting the complexity of this method. Comparisons are made between the linear array and FPA methods.

  8. Gamma-ray observations of SN 1987A with an array of high-purity germanium detectors

    Sandie, W. G.; Nakano, G. H.; Chase, L. F., Jr.; Fishman, G. J.; Meegan, C. A.; Wilson, R. B.; Paciesas, W.

    A balloonborne gamma-ray spectrometer comprising an array of high-purity n-type germanium detectors was flown from Alice Springs, Northern Territory, Australia, on May 29 - 30, 1987, 96 days after the observed neutrino pulse. SN 1987A was within the 22-deg field of view for about 3300 s during May 29.9 - 30.3 UT. No excess gamma rays were observed at energies appropriate to the Ni(56) - Co(56) decay chain or from other lines in the energy region from 0.1 to 3.0 MeV. The data imply that there was less than 2.5×10-4 solar masses of Co(56) exposed to the Earth at the time of the observation. Additional balloon-borne observations are planned.

  9. Status of the Germanium Detector Array (GERDA) in the search of neutrinoless ββ decays of 76Ge at LNGS

    Schönert, S.; Abt, I.; Altmann, M.; Bakalyarov, A. M.; Barabanov, I.; Bauer, C.; Bauer, M.; Bellotti, E.; Belogurov, S.; Belyaev, S. T.; Bettini, A.; Bezrukov, L.; Brudanin, V.; Bolotsky, V. P.; Caldwell, A.; Cattadori, C.; Chirchenko, M. V.; Chkvorets, O.; Demidova, E.; di Vacri, A.; Eberth, J.; Egorov, V.; Farnea, E.; Gangapshev, A.; Gasparro, J.; Grabmayr, P.; Grigoriev, G. Y.; Gurentsov, V.; Gusev, K.; Hampel, W.; Heusser, G.; Heisel, M.; Hofmann, W.; Hult, M.; Inzhechik, L. V.; Jochum, J.; Junker, M.; Katulina, S.; Kiko, J.; Kirpichnikov, I. V.; Klimenko, A.; Knapp, M.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kröninger, K.; Kuzminov, V. V.; Laubenstein, M.; Lebedev, V. I.; Liu, X.; Majorovits, B.; Marissens, G.; Nemchenok, I.; Pandola, L.; Peiffer, P.; Pullia, A.; Alvarez, C. R.; Sandukovsky, V.; Scholl, S.; Schreiner, J.; Schwan, U.; Schwingenheuer, B.; Simgen, H.; Smolnikov, A.; Stelzer, F.; Tikhomirov, A. V.; Tomei, C.; Ur, C. A.; Vasenko, A. A.; Vasiliev, S.; Weißhaar, D.; Wojcik, M.; Yanovich, E.; Yurkowski, J.; Zhukov, S. V.; Zocca, F.; Zuzel, G.

    2006-12-01

    The Germanium Detector Array (GERDA) in the search for neutrinoless ββ decays of 76Ge at LNGS will operate bare germanium diodes enriched in 76Ge in an (optional active) cryogenic fluid shield to investigate neutrinoless ββ decay with a sensitivity of T 1/2 > 2 × 1026 yr after an exposure of 100 kg yr. Recent progress includes the installation of the first underground infrastructures at Gran Sasso, the completion of the enrichment of 37.5 kg of germanium material for detector construction, prototyping of low-mass detector support and contacts, and front-end and DAQ electronics, as well as the preparation for construction of the cryogenic vessel and water tank.

  10. Germanium Collimating micro-Channel Arrays For High Resolution, High Energy Confocal X-ray Fluorescence Microscopy

    Agyeman-Budu, David N; Coulthard, Ian; Gordon, Robert; Hallin, Emil; Woll, Arthur R

    2016-01-01

    Confocal x-ray fluorescence microscopy (CXRF) allows direct detection of x-ray fluorescence from a micron-scale 3D volume of an extended, unthinned sample. We have previously demonstrated the use of a novel collection optic, fabricated from silicon, that improves the spatial resolution of this approach by an order of magnitude over CXRF using polycapillaries. The optic, called a collimating channel array (CCA), consists of micron-scale, lithographically-fabricated arrays of collimating channels, all directed towards a single source position. Due to the limited absorbing power of silicon, the useful energy range of these optics was limited to fluorescence emission below about 10 keV. Here, we report fabrication of CCAs from germanium substrates, and demonstrate their practical use for CXRF up to 20 keV. Specifically we demonstrate a nearly energy-independent critical spatial resolution $d_R$ of 2.1$\\pm$0.17 \\um from 2-20 keV, as well as excellent background reduction compared to silicon-based CCAs throughout t...

  11. A 32x32 Direct Hybrid Germanium Photoconductor Array with CTIA Readout Multiplexer Project

    National Aeronautics and Space Administration — This proposal introduces an innovative concept aimed to develop, for the first time, a 1k pixel far infrared focal-plane array with the following key design...

  12. A 32x32 Direct Hybrid Germanium Photoconductor Array with CTIA Readout Multiplexer Project

    National Aeronautics and Space Administration — We propose to investigate the feasibility of developing a two-dimensional far infrared photoconductor array with the following key design features: 1- A...

  13. Enhanced reversible lithium storage in germanium nano-island coated 3D hexagonal bottle-like Si nanorod arrays

    Yue, Chuang; Yu, Yingjian; Wu, Zhenguo; He, Xu; Wang, Jianyuan; Li, Juntao; Li, Cheng; Wu, Suntao; Li, Jing; Kang, Junyong

    2014-01-01

    The rapid development of numerous microscale electronic devices, such as smart dust, micro or nano bio-sensors, medical implants and so on, has induced an urgent demand for integratable micro or nano battery supplies with high energy and power densities. In this work, 3D hexagonal bottle-like Si/Ge composite nanorod (NR) array electrodes with good uniformity and mechanical stability potentially used in micro or nano rechargeable Li-ion batteries (LIBs) were fabricated on Si substrates by a cost-effective, wafer scale and Si-compatible process. The optimized Ge nano-islands coated Si NR composite arrays as anode materials exhibit superior areal capacities and cycling performances by virtue of their favourable structural and improved conductivity features. The unique Si-based composite electrode in nanostructures can be technically and fundamentally employed to configurate all-solid-state Li-ion micro-batteries as on-chip power systems integrated into micro-electronic devices such as M/NEMS devices or autonomous wireless microsystems.The rapid development of numerous microscale electronic devices, such as smart dust, micro or nano bio-sensors, medical implants and so on, has induced an urgent demand for integratable micro or nano battery supplies with high energy and power densities. In this work, 3D hexagonal bottle-like Si/Ge composite nanorod (NR) array electrodes with good uniformity and mechanical stability potentially used in micro or nano rechargeable Li-ion batteries (LIBs) were fabricated on Si substrates by a cost-effective, wafer scale and Si-compatible process. The optimized Ge nano-islands coated Si NR composite arrays as anode materials exhibit superior areal capacities and cycling performances by virtue of their favourable structural and improved conductivity features. The unique Si-based composite electrode in nanostructures can be technically and fundamentally employed to configurate all-solid-state Li-ion micro-batteries as on-chip power systems

  14. Oriented bottom-up growth of armchair graphene nanoribbons on germanium

    Arnold, Michael Scott; Jacobberger, Robert Michael

    2016-03-15

    Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.

  15. Extrinsic germanium Blocked Impurity Bank (BIB) detectors

    Krabach, Timothy N.; Huffman, James E.; Watson, Dan M.

    1989-01-01

    Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

  16. Mineral commodity profiles: Germanium

    Butterman, W.C.; Jorgenson, John D.

    2005-01-01

    Overview -- Germanium is a hard, brittle semimetal that first came into use a half-century ago as a semiconductor material in radar units and as the material from which the first transistor was made. Today it is used principally as a component of the glass in telecommunications fiber optics; as a polymerization catalyst for polyethylene terephthalate (PET), a commercially important plastic; in infrared (IR) night vision devices; and as a semiconductor and substrate in electronics circuitry. Most germanium is recovered as a byproduct of zinc smelting, although it also has been recovered at some copper smelters and from the fly ash of coal-burning industrial powerplants. It is a highly dispersed element, associated primarily with base-metal sulfide ores. In the United States, germanium is recovered from zinc smelter residues and manufacturing scrap and is refined by two companies at four germanium refineries. One of the four refineries is dedicated to processing scrap. In 2000, producers sold zone-refined (high-purity) germanium at about $1,250 per kilogram and electronic-grade germanium dioxide (GeO2) at $800 per kilogram. Domestic refined production was valued at $22 million. Germanium is a critical component in highly technical devices and processes. It is likely to remain in demand in the future at levels at least as high as those of 2000. U.S. resources of germanium are probably adequate to meet domestic needs for several decades.

  17. Characterisation of two AGATA asymmetric high purity germanium capsules

    Colosimo, S.J., E-mail: sjc@ns.ph.liv.ac.uk [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Moon, S.; Boston, A.J.; Boston, H.C.; Cresswell, J.R.; Harkness-Brennan, L.; Judson, D.S. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Lazarus, I.H. [STFC Daresbury, Daresbury, Warrington WA4 4AD (United Kingdom); Nolan, P.J. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Simpson, J. [STFC Daresbury, Daresbury, Warrington WA4 4AD (United Kingdom); Unsworth, C. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom)

    2015-02-11

    The AGATA spectrometer is an array of highly segmented high purity germanium detectors. The spectrometer uses pulse shape analysis in order to track Compton scattered γ-rays to increase the efficiency of nuclear spectroscopy studies. The characterisation of two high purity germanium detector capsules for AGATA of the same A-type has been performed at the University of Liverpool. This work will examine the uniformity of performance of the two capsules, including a comparison of the resolution and efficiency as well as a study of charge collection. The performance of the capsules shows good agreement, which is essential for the efficient operation of the γ-ray tracking array.

  18. Attenuated total internal reflection infrared microspectroscopic imaging using a large-radius germanium internal reflection element and a linear array detector.

    Patterson, Brian M; Havrilla, George J

    2006-11-01

    The number of techniques and instruments available for Fourier transform infrared (FT-IR) microspectroscopic imaging has grown significantly over the past few years. Attenuated total internal reflectance (ATR) FT-IR microspectroscopy reduces sample preparation time and has simplified the analysis of many difficult samples. FT-IR imaging has become a powerful analytical tool using either a focal plane array or a linear array detector, especially when coupled with a chemometric analysis package. The field of view of the ATR-IR microspectroscopic imaging area can be greatly increased from 300 x 300 microm to 2500 x 2500 microm using a larger internal reflection element of 12.5 mm radius instead of the typical 1.5 mm radius. This gives an area increase of 70x before aberrant effects become too great. Parameters evaluated include the change in penetration depth as a function of beam displacement, measurements of the active area, magnification factor, and change in spatial resolution over the imaging area. Drawbacks such as large file size will also be discussed. This technique has been successfully applied to the FT-IR imaging of polydimethylsiloxane foam cross-sections, latent human fingerprints, and a model inorganic mixture, which demonstrates the usefulness of the method for pharmaceuticals.

  19. Germanium geochemistry and mineralogy

    Bernstein, L.R.

    1985-01-01

    Germanium is enriched in the following geologic environments: 1. (1) iron meteorites and terrestrial iron-nickel; 2. (2) sulfide ore deposits, particularly those hosted by sedimentary rocks; 3. (3) iron oxide deposits; 4. (4) oxidized zones of Ge-bearing sulfide deposits; 5. (5) pegmatites, greisens, and skarns; and 6. (6) coal and lignitized wood. In silicate melts, Ge is highly siderophile in the presence of native iron-nickel; otherwise, it is highly lithophile. Among silicate minerals, Ge is concentrated in those having less polymerized silicate tetrahedra such as olivine and topaz. In deposits formed from hydrothermal solutions, Ge tends to be enriched mostly in either sulfides or in fluorine-bearing phases; it is thus concentrated both in some hydrothermal sulfide deposits and in pegmatites, greisens, and skarns. In sulfide deposits that formed from solutions having low to moderate sulfur activity, Ge is concentrated in sphalerite in amounts up to 3000 ppm. Sulfide deposits that formed from solutions having higher sulfur activity allowed Ge to either form its own sulfides, particularly with Cu, or to substitute for As, Sn, or other metals in sulfosalts. The Ge in hydrothermal fluids probably derives from enrichment during the fractional crystallization of igneous fluids, or is due to the incorporation of Ge from the country rocks, particularly from those containing organic material. Germanium bonds to lignin-derivative organic compounds that are found in peat and lignite, accounting for its common concentration in coals and related organic material. Germanium is precipitated from water together with iron hydroxide, accounting for its concentration in some sedimentary and supergene iron oxide deposits. It also is able to substitute for Fe in magnetite in a variety of geologic environments. In the oxidized zone of Ge-bearing sulfide deposits, Ge is concentrated in oxides, hydroxides, and hydroxy-sulfates, sometimes forming its own minerals. It is particularly

  20. Pulse shapes and surface effects in segmented germanium detectors

    Lenz, Daniel

    2010-03-24

    It is well established that at least two neutrinos are massive. The absolute neutrino mass scale and the neutrino hierarchy are still unknown. In addition, it is not known whether the neutrino is a Dirac or a Majorana particle. The GERmanium Detector Array (GERDA) will be used to search for neutrinoless double beta decay of {sup 76}Ge. The discovery of this decay could help to answer the open questions. In the GERDA experiment, germanium detectors enriched in the isotope {sup 76}Ge are used as source and detector at the same time. The experiment is planned in two phases. In the first, phase existing detectors are deployed. In the second phase, additional detectors will be added. These detectors can be segmented. A low background index around the Q value of the decay is important to maximize the sensitivity of the experiment. This can be achieved through anti-coincidences between segments and through pulse shape analysis. The background index due to radioactive decays in the detector strings and the detectors themselves was estimated, using Monte Carlo simulations for a nominal GERDA Phase II array with 18-fold segmented germanium detectors. A pulse shape simulation package was developed for segmented high-purity germanium detectors. The pulse shape simulation was validated with data taken with an 19-fold segmented high-purity germanium detector. The main part of the detector is 18-fold segmented, 6-fold in the azimuthal angle and 3-fold in the height. A 19th segment of 5mm thickness was created on the top surface of the detector. The detector was characterized and events with energy deposited in the top segment were studied in detail. It was found that the metalization close to the end of the detector is very important with respect to the length of the of the pulses observed. In addition indications for n-type and p-type surface channels were found. (orig.)

  1. Germanium detector studies in the framework of the GERDA experiment

    Budjas, Dusan

    2009-05-06

    The GERmanium Detector Array (GERDA) is an ultra-low background experiment under construction at Laboratori Nazionali del Gran Sasso. GERDA will search for {sup 76}Ge neutrinoless double beta decay with an aim for 100-fold reduction in background compared to predecessor experiments. This ambition necessitates innovative design approaches, strict selection of low-radioactivity materials, and novel techniques for active background suppression. The core feature of GERDA is its array of germanium detectors for ionizing radiation, which are enriched in {sup 76}Ge. Germanium detectors are the central theme of this dissertation. The first part describes the implementation, testing, and optimisation of Monte Carlo simulations of germanium spectrometers, intensively involved in the selection of low-radioactivity materials. The simulations are essential for evaluations of the gamma ray measurements. The second part concerns the development and validation of an active background suppression technique based on germanium detector signal shape analysis. This was performed for the first time using a BEGe-type detector, which features a small read-out electrode. As a result of this work, BEGe is now one of the two detector technologies included in research and development for the second phase of the GERDA experiment. A suppression of major GERDA backgrounds is demonstrated, with (0.93{+-}0.08)% survival probability for events from {sup 60}Co, (21{+-}3)% for {sup 226}Ra, and (40{+-}2)% for {sup 228}Th. The acceptance of {sup 228}Th double escape events, which are analogous to double beta decay, was kept at (89{+-}1)%. (orig.)

  2. Status report on the International Germanium Experiment

    Brodzinski, R.L.; Avignone, F.T.; Collar, J.I.; Courant, H.; Garcia, E.; Guerard, C.K.; Hensley, W.K.; Kirpichnikov, I.V.; Miley, H.S.; Morales, A.; Morales, J.; Nunez-Lagos, R.; Osetrov, S.B.; Pogosov, V.S.; Pomansky, A.A.; Puimedon, J.; Reeves, J.H.; Ruddick, K.; Saenz, C.; Salinas, A.; Sarsa, M.L.; Smolnikov, A.A.; Starostin, A.S.; Tamanyan, A.G.; Vasiliev, S.I.; Villar, J.A. (Pacific Northwest Lab., Richland, WA (United States) Univ. of South Carolina, Columbia, SC (United States) Univ. of Minnesota, Minneapolis, MN (United States) Univ. of Zaragoza (Spain) Inst. for Theoretical and Experimental Physics, Moscow (Russian Federation) Inst. for Nuclear Research, Baksan Neutrino Observatory (Russian Federation) Yerevan Physical Inst., Yerevan (Armenia))

    1993-04-01

    Phase II detector fabrication for the International Germanium Experiment is in progress. Sources of background observed during Phase I are discussed. Cosmogenic [sup 7]Be is measured in germanium. Radium contamination, presumably in electroformed copper, is reported. (orig.)

  3. Status report on the International Germanium Experiment

    Brodzinski, R. L.; Avignone, F. T.; Collar, J. I.; Courant, H.; García, E.; Guerard, C. K.; Hensley, W. K.; Kirpichnikov, I. V.; Miley, H. S.; Morales, A.; Morales, J.; Núñez-Lagos, R.; Osetrov, S. B.; Pogosov, V. S.; Pomansky, A. A.; Puimedón, J.; Reeves, J. H.; Ruddick, K.; Sáenz, C.; Salinas, A.; Sarsa, M. L.; Smolnikov, A. A.; Starostin, A. S.; Tamanyan, A. G.; Vasiliev, S. I.; Villar, J. A.

    1993-04-01

    Phase II detector fabrication for the International Germanium Experiment is in progress. Sources of background observed during Phase I are discussed. Cosmogenic 7Be is measured in germanium. Radium contamination, presumably in electroformed copper, is reported.

  4. The Germanium Dichotomy in Martian Meteorites

    Humayun, M.; Yang, S.; Righter, K.; Zanda, B.; Hewins, R. H.

    2016-01-01

    Germanium is a moderately volatile and siderophile element that follows silicon in its compatibility during partial melting of planetary mantles. Despite its obvious usefulness in planetary geochemistry germanium is not analyzed routinely, with there being only three prior studies reporting germanium abundances in Martian meteorites. The broad range (1-3 ppm) observed in Martian igneous rocks is in stark contrast to the narrow range of germanium observed in terrestrial basalts (1.5 plus or minus 0.1 ppm). The germanium data from these studies indicates that nakhlites contain 2-3 ppm germanium, while shergottites contain approximately 1 ppm germanium, a dichotomy with important implications for core formation models. There have been no reliable germanium abundances on chassignites. The ancient meteoritic breccia, NWA 7533 (and paired meteorites) contains numerous clasts, some pristine and some impact melt rocks, that are being studied individually. Because germanium is depleted in the Martian crust relative to chondritic impactors, it has proven useful as an indicator of meteoritic contamination of impact melt clasts in NWA 7533. The germanium/silicon ratio can be applied to minerals that might not partition nickel and iridium, like feldspars. We report germanium in minerals from the 3 known chassignites, 2 nakhlites and 5 shergottites by LAICP- MS using a method optimized for precise germanium analysis.

  5. Empirical Correction of Crosstalk in a Low-Background Germanium γ–γ Analysis System

    Keillor, Martin E.; Erikson, Luke E.; Aalseth, Craig E.; Day, Anthony R.; Fuller, Erin S.; Glasgow, Brian D.; Hoppe, Eric W.; Hossbach, Todd W.; Mizouni, Leila K.; Myers, Allan W.; Overman, Cory T.; Seifert, Allen; Stavenger, Timothy J.

    2013-05-01

    ABSTRACT The Pacific Northwest National Laboratory is currently developing a custom software suite capable of automating many of the tasks required to accurately analyze coincident signals within gamma spectrometer arrays. During the course of this work, significant crosstalk was identified in the energy determination for spectra collected with a new low-background intrinsic germanium (HPGe) array at PNNL. The HPGe array is designed for high detection efficiency, ultra-low-background performance, and sensitive gamma gamma coincidence detection. The first half of the array, a single cryostat containing 7 HPGe crystals, was recently installed into a new shallow underground laboratory facility. This update will present a brief review of the germanium array, describe the observed crosstalk, and present a straight-forward empirical correction that significantly reduces the impact of this crosstalk on the spectroscopic performance of the system.

  6. Study on the local atomic structure of germanium in organic germanium compounds by EXAFS

    1999-01-01

    Organic germanium compounds have been extensively applied in medicine as tonics,In this paper,the local structures of two organic germanium compounds,carboxyethylgermanium sesquioxide and polymeric germanium glutamate,were determined by EXAFS.The structure parameters including coordination numbers and bond lengths were reported,and possible structure patterns were discussed.

  7. Harmonic Lattice Dynamics of Germanium

    Nelin, G.

    1974-07-01

    The phonon dispersion relations of the DELTA-, LAMBDA-, and SIGMA-directions of germanium at 80 K are analysed in terms of current harmonic lattice dynamical models. On the basis of this experience, a new model is proposed which gives a unified account of the strong points of the previous models. The principal elements of the presented theory are quasiparticle bond charges combined with a valence force field.

  8. Hydrothermal synthesis of bismuth germanium oxide

    Boyle, Timothy J.

    2016-12-13

    A method for the hydrothermal synthesis of bismuth germanium oxide comprises dissolving a bismuth precursor (e.g., bismuth nitrate pentahydrate) and a germanium precursor (e.g., germanium dioxide) in water and heating the aqueous solution to an elevated reaction temperature for a length of time sufficient to produce the eulytite phase of bismuth germanium oxide (E-BGO) with high yield. The E-BGO produced can be used as a scintillator material. For example, the air stability and radioluminescence response suggest that the E-BGO can be employed for medical applications.

  9. Black Germanium fabricated by reactive ion etching

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to structure in optoelectronics and IR optics.

  10. Structural Design Parameters for Germanium

    Salem, Jon; Rogers, Richard; Baker, Eric

    2017-01-01

    The fracture toughness and slow crack growth parameters of germanium supplied as single crystal beams and coarse grain disks were measured. Although germanium is anisotropic (A* 1.7), it is not as anisotropic as SiC, NiAl, or Cu. Thus the fracture toughness was similar on the 100, 110, and 111 planes, however, measurements associated with randomly oriented grinding cracks were 6 to 30 higher. Crack extension in ring loaded disks occurred on the 111 planes due to both the lower fracture energy and the higher stresses on stiff 111 planes. Germanium exhibits a Weibull scale effect, but does not exhibit significant slow crack growth in distilled water. (n 100), implying that design for quasi static loading can be performed with scaled strength statistics. Practical values for engineering design are a fracture toughness of 0.69 0.02 MPam (megapascals per square root meter) and a Weibull modulus of m 6 2. For well ground and reasonable handled coupons, average fracture strength should be greater than 40 megapascals. Aggregate, polycrystalline elastic constants are Epoly 131 gigapascals, vpoly 0.22.

  11. A Complete Physical Germanium-on-Silicon Quantum Dot Self-Assembly Process

    Alkhatib, Amro; Nayfeh, Ammar

    2013-06-01

    Achieving quantum dot self-assembly at precise pre-defined locations is of vital interest. In this work, a novel physical method for producing germanium quantum dots on silicon using nanoindentation to pre-define nucleation sites is described. Self-assembly of ordered ~10 nm height germanium quantum dot arrays on silicon substrates is achieved. Due to the inherent simplicity and elegance of the proposed method, the results describe an attractive technique to manufacture semiconductor quantum dot structures for future quantum electronic and photonic applications.

  12. Laser synthesis of germanium tin alloys on virtual germanium

    Stefanov, S.; Conde, J. C.; Benedetti, A.; Serra, C.; Werner, J.; Oehme, M.; Schulze, J.; Buca, D.; Holländer, B.; Mantl, S.; Chiussi, S.

    2012-03-01

    Synthesis of heteroepitaxial germanium tin (GeSn) alloys using excimer laser processing of a thin 4 nm Sn layer on Ge has been demonstrated and studied. Laser induced rapid heating, subsequent melting, and re-solidification processes at extremely high cooling rates have been experimentally achieved and also simulated numerically to optimize the processing parameters. "In situ" measured sample reflectivity with nanosecond time resolution was used as feedback for the simulations and directly correlated to alloy composition. Detailed characterization of the GeSn alloys after the optimization of the processing conditions indicated substitutional Sn concentration of up to 1% in the Ge matrix.

  13. The MAJORANA DEMONSTRATOR: A Search for Neutrinoless Double-beta Decay of Germanium-76

    Schubert, Alexis G.; Aguayo, Estanislao; Avignone, F. T.; Zhang, C.; Back, Henning O.; Barabash, Alexander S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Busch, Matthew; Chan, Yuen-Dat; Christofferson, Cabot-Ann; Collar, J. I.; Combs, Dustin C.; Cooper, R. J.; Detwiler, Jason A.; Leon, Jonathan D.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, S. R.; Esterline, James H.; Fast, James E.; Fields, N.; Finnerty, P.; Fraenkle, Florian; Gehman, Victor M.; Giovanetti, G. K.; Green, M.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Horton, Mark; Howard, Stanley; Howe, Mark; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, M. F.; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; LaFerriere, Brian D.; LaRoque, B. H.; Leviner, L.; Loach, J. C.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Merriman, Jason H.; Miller, M. L.; Mizouni, Leila; Nomachi, Masaharu; Orrell, John L.; Overman, Nicole R.; Phillips, D.; Poon, Alan; Perumpilly, Gopakumar; Prior, Gersende; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Ronquest, M. C.; Shima, T.; Shirchenko, M.; Snavely, Kyle J.; Sobolev, V.; Steele, David; Strain, J.; Thomas, K.; Timkin, V.; Tornow, Werner; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Vorren, Kris R.; Wilkerson, J. F.; Wolfe, B. A.; Yakushev, E.; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir

    2012-09-28

    The observation of neutrinoless double-beta decay would determine whether the neutrino is a Majorana particle and provide information on the absolute scale of neutrino mass. The MAJORANA Collaboration is constructing the DEMONSTRATOR, an array of germanium detectors, to search for neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR will contain 40 kg of germanium; up to 30 kg will be enriched to 86% in 76Ge. The DEMONSTRATOR will be deployed deep underground in an ultra-low-background shielded environment. Operation of the DEMONSTRATOR aims to determine whether a future tonne-scale germanium experiment can achieve a background goal of one count per tonne-year in a 4-keV region of interest around the 76Ge neutrinoless double-beta decay Q-value of 2039 keV.

  14. The MAJORANA DEMONSTRATOR: A Search for Neutrinoless Double-beta Decay of Germanium-76

    Schubert, A G; Avignone, F T; Back, H O; Barabash, A S; Bergevin, M; Bertrand, F E; Boswell, M; Brudanin, V; Busch, M; Chan, Y-D; Christofferson, C D; Collar, J I; Combs, D C; Cooper, R J; Detwiler, J A; Leon, J; Doe, P J; Efremenko, Yu; Egorov, V; Ejiri, H; Elliott, S R; Esterline, J; Fast, J E; Fields, N; Finnerty, P; Fraenkle, F M; Gehman, V M; Giovanetti, G K; Green, M P; Guiseppe, V E; Gusey, K; Hallin, A L; Hazama, R; Henning, R; Hime, A; Hoppe, E W; Horton, M; Howard, S; Howe, M A; Johnson, R A; Keeter, K J; Keillor, M E; Keller, C; Kephart, J D; Kidd, M F; Knecht, A; Kochetov, O; Konovalov, S I; Kouzes, R T; LaFerriere, B; LaRoque, B H; Leviner, L E; Loach, J C; MacMullin, S; Marino, M G; Martin, R D; Mei, D -M; Merriman, J; Miller, M L; Mizouni, L; Nomachi, M; Orrell, J L; Overman, N; Phillips, D G; Poon, A W P; Perumpilly, G; Prior, G; Radford, D C; Rielage, K; Robertson, R G H; Ronquest, M C; Shima, T; Shirchenko, M; Snavely, K J; Sobolev, V; Steele, D; Strain, J; Thomas, K; Timkin, V; Tornow, W; Vanyushin, I; Varner, R L; Vetter, K; Vorren, K; Wilkerson, J F; Wolfe, B A; Yakushev, E; Young, A R; Yu, C ?H; Yumatov, V; Zhan, C

    2011-01-01

    The observation of neutrinoless double-beta decay would determine whether the neutrino is a Majorana particle and provide information on the absolute scale of neutrino mass. The MAJORANA Collaboration is constructing the DEMONSTRATOR, an array of germanium detectors, to search for neutrinoless double-beta decay of 76-Ge. The DEMONSTRATOR will contain 40 kg of germanium; up to 30 kg will be enriched to 86% in 76-Ge. The DEMONSTRATOR will be deployed deep underground in an ultra-low-background shielded environment. Operation of the DEMONSTRATOR aims to determine whether a future tonne-scale germanium experiment can achieve a background goal of one count per tonne-year in a 4-keV region of interest around the 76-Ge neutrinoless double-beta decay Q-value of 2039 keV.

  15. Germanium multiphase equation of state

    Crockett, S. D.; De Lorenzi-Venneri, G.; Kress, J. D.; Rudin, S. P.

    2014-05-01

    A new SESAME multiphase germanium equation of state (EOS) has been developed utilizing the best available experimental data and density functional theory (DFT) calculations. The equilibrium EOS includes the Ge I (diamond), the Ge II (β-Sn) and the liquid phases. The foundation of the EOS is based on density functional theory calculations which are used to determine the cold curve and the Debye temperature. Results are compared to Hugoniot data through the solid-solid and solid-liquid transitions. We propose some experiments to better understand the dynamics of this element.

  16. Functionalization of Mechanochemically Passivated Germanium Nanoparticles via "Click" Chemistry

    Purkait, Tapas Kumar

    Germanium nanoparticles (Ge NPs) may be fascinating for their electronic and optoelectronic properties, as the band gap of Ge NPs can be tuned from the infrared into the visible range of solar spectru. Further functionalization of those nanoparticles may potentially lead to numerous applications ranging from surface attachment, bioimaging, drug delivery and nanoparticles based devices. Blue luminescent germanium nanoparticles were synthesized from a novel top-down mechanochemical process using high energy ball milling (HEBM) of bulk germanium. Various reactive organic molecules (such as, alkynes, nitriles, azides) were used in this process to react with fresh surface and passivate the surface through Ge-C or Ge-N bond. Various purification process, such as gel permeation chromatography (GPC), Soxhlet dailysis etc. were introduced to purify nanoparticles from molecular impurities. A size separation technique was developed using GPC. The size separated Ge NPs were characterize by TEM, small angle X-ray scattering (SAXS), UV-vis absorption and photoluminescence (PL) emission spectroscopy to investigate their size selective properties. Germanium nanoparticles with alkyne termini group were prepared by HEBM of germanium with a mixture of n-alkynes and alpha, o-diynes. Additional functionalization of those nanoparticles was achieved by copper(I) catalyzed azide-alkyne "click" reaction. A variety of organic and organometallic azides including biologically important glucals have been reacted in this manner resulting in nanopartilces adorned with ferrocenyl, trimethylsilyl, and glucal groups. Additional functionalization of those nanoparticles was achieved by reactions with various azides via a Cu(I) catalyzed azide-alkyne "click" reaction. Various azides, including PEG derivatives and cylcodextrin moiety, were grafted to the initially formed surface. Globular nanoparticle arrays were formed through interparticle linking via "click" chemistry or "host-guest" chemistry

  17. Silicon Germanium Quantum Well Solar Cell Project

    National Aeronautics and Space Administration — Quantum-well structures embodied on single crystal silicon germanium drastically enhanced carrier mobilities.  The cell-to-cell circuits of quantum-well PV...

  18. Metal induced crystallization of silicon germanium alloys

    Gjukic, M.

    2007-05-15

    In the framework of this thesis the applicability of the aluminium-induced layer exchange on binary silicon germanium alloys was studied. It is here for the first time shown that polycrstalline silicon-germanium layers can be fabricated over the whole composition range by the aluminium-induced layer exchange. The experimental results prove thet the resulting material exhibits a polycrystalline character with typocal grain sizes of 10-100 {mu}m. Raman measurements confirm that the structural properties of the resulting layers are because of the large crystallites more comparable with monocrystalline than with nano- or microcrystalline silicon-germanium. The alloy ratio of the polycrystalline layer correspondes to the chemical composition of the amorphous starting layer. The polycrystalline silicon-germanium layers possess in the range of the interband transitions a reflection spectrum, as it is otherwise only known from monocrystalline reference layers. The improvement of the absorption in the photovoltaically relevant spectral range aimed by the application of silicon-germanium could be also proved by absorption measurments. Strongly correlated with the structural properties of the polycrystalline layers and the electronic band structure resulting from this are beside the optical properties also the electrical properties of the material, especially the charge-carrier mobility and the doping concentration. For binary silicon-germanium layers the hole concentration of about 2 x 10{sup 18} cm{sup -3} for pure silicon increrases to about 5 x 10{sup 20} cm{sub -3} for pure germanium. Temperature-resolved measurements were applied in order to detect doping levels respectively semiconductor-metal transitions. In the last part of the thesis the hydrogen passivation of polycrystalline thin silicon-germanium layers, which were fabricated by means of aluminium-induced layer exchange, is treated.

  19. Germanium content in Polish hard coals

    Makowska Dorota

    2016-01-01

    Full Text Available Due to the policy of the European Union, it is necessary to search for new sources of scarce raw materials. One of these materials is germanium, listed as a critical element. This semi-metal is widely used in the electronics industry, for example in the production of semiconductors, fibre optics and solar cells. Coal and fly ash from its combustion and gasification for a long time have been considered as a potential source of many critical elements, particularly germanium. The paper presents the results of germanium content determination in the Polish hard coal. 23 coal samples of various coal ranks were analysed. The samples were collected from 15 mines of the Upper Silesian Coal Basin and from one mine of the Lublin Coal Basin. The determination of germanium content was performed with the use of Atomic Absorption Spectrometry with Electrothermal Atomization (GFAAS. The investigation showed that germanium content in the analysed samples was at least twice lower than the average content of this element in the hard coals analysed so far and was in the range of 0.08 ÷ 1.28 mg/kg. Moreover, the content of Ge in the ashes from the studied coals does not exceed 15 mg/kg, which is lower than the average value of Ge content in the coal ashes. The highest content of this element characterizes coals of the Lublin Coal Basin and young coals type 31 from the Vistula region. The results indicate a low utility of the analysed coal ashes as a source of the recovery of germanium. On the basis of the analyses, the lack of the relationship between the content of the element and the ash content in the tested coals was noted. For coals of the Upper Silesian Coal Basin, the relationship between the content of germanium in the ashes and the depth of the seam was observed.

  20. Recovering germanium from coal ash by chlorination with ammonium chloride

    2002-01-01

    A new process of enriching germanium from coal ash was developed. The process involves in mixing the coal ash and ammonium chloride and then roasting the mixture to produce germanium chloride that is then absorbed by dilute hydrochloric acid and hydrolyzed to germanium oxide. The germanium recovery reached to 80.2% at the optimum condition: mass ratio of NH4Cl/coal ash is 0.15, roasting temperature 400℃ and roasting time 90 min.

  1. Front End Spectroscopy ASIC for Germanium Detectors

    Wulf, Eric

    Large-area, tracking, semiconductor detectors with excellent spatial and spectral resolution enable exciting new access to soft (0.2-5 MeV) gamma-ray astrophysics. The improvements from semiconductor tracking detectors come with the burden of high density of strips and/or pixels that require high-density, low-power, spectroscopy quality readout electronics. CMOS ASIC technologies are a natural fit to this requirement and have led to high-quality readout systems for all current semiconducting tracking detectors except for germanium detectors. The Compton Spectrometer and Imager (COSI), formerly NCT, at University of California Berkeley and the Gamma-Ray Imager/Polarimeter for Solar flares (GRIPS) at Goddard Space Flight Center utilize germanium cross-strip detectors and are on the forefront of NASA's Compton telescope research with funded missions of long duration balloon flights. The development of a readout ASIC for germanium detectors would allow COSI to replace their discrete electronics readout and would enable the proposed Gamma-Ray Explorer (GRX) mission utilizing germanium strip-detectors. We propose a 3-year program to develop and test a germanium readout ASIC to TRL 5 and to integrate the ASIC readout onto a COSI detector allowing a TRL 6 demonstration for the following COSI balloon flight. Our group at NRL led a program, sponsored by another government agency, to produce and integrate a cross-strip silicon detector ASIC, designed and fabricated by Dr. De Geronimo at Brookhaven National Laboratory. The ASIC was designed to handle the large (>30 pF) capacitance of three 10 cm^2 detectors daisy-chained together. The front-end preamplifier, selectable inverter, shaping times, and gains make this ASIC compatible with a germanium cross-strip detector as well. We therefore have the opportunity and expertise to leverage the previous investment in the silicon ASIC for a new mission. A germanium strip detector ASIC will also require precise timing of the signals at

  2. Status report on the International Germanium Experiment

    Brodzinski, R.L.; Hensley, W.K.; Miley, H.S.; Reeves, J.H. [Pacific Northwest Lab., Richland, WA (United States); Avignone, F.T.; Collar, J.I.; Guerard, C.K. [South Carolina Univ., Columbia, SC (United States); Courant, H.; Ruddick, K. [Minnesota Univ., Minneapolis, MN (United States); Kirpichnikov, I.V.; Starostin, A.S. [AN SSSR, Moscow (Russian Federation). Inst. Teoreticheskoj i Eksperimental`noj Fiziki; Garcia, E.; Morales, A.; Morales, J.; Nunez-Lagos, R.; Puimedon, J.; Saenz, C.; Salinas, A.; Sarasa, M.L.; Villar, J.A. [Zaragoza Univ. (Spain); Osetrov, S.B.; Pomansky, A.A.; Smolnikov, A.A.; Vasiliev, S.I. [AN SSSR, Moscow (Russian Federation). Inst. Yadernykh Issledovanij; Pogosov, V.S.; Tamanyan, A.G. [Erevanskij Fizicheskij Inst., Erevan (Armenia)

    1992-06-01

    Phase II detector fabrication for the International Germanium Experiment is awaiting resolution of technical details observed during Phase I. Measurements of fiducial volume, configuration of the tansistor-reset preamplifier stage, and sources of background are discussed. Cosmogenic {sup 7}Be is measured in germanium. Radium contamination in electroformed copper reported. The 2{nu} double- beta decay half-life of {sup 76}Ge measured with a Phase I detector is in reasonable agreement with previously reported values. No events are observed in the vicinity of the O{nu} double-beta decay energy.

  3. Interstitial oxygen in germanium and silicon

    Artacho, E.; Yndurain, F. [Instituto Nicolas Cabrera and Departamento de Fisica de la Materia Condensada, C-III Universidad Autonoma de Madrid, 28049 Madrid (Spain); Pajot, B. [Groupe de Physique des Solides (Unite Associee au CNRS), Tour 23, Universite Denis Diderot, 2 Place Jussieu, 75251 Paris Cedex 05 (France); Ramirez, R.; Herrero, C.P. [Instituto de Ciencia de Materiales, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain); Khirunenko, L.I. [Institute of Physics, National Academy of Sciences of Ukraine, Prospect Nauki 46, 252650 Kiev 22 (Ukraine); Itoh, K.M. [Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223 (Japan); Haller, E.E. [Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720 (United States)

    1997-08-01

    The microscopic structure of interstitial oxygen in germanium and its associated dynamics are studied both experimentally and theoretically. The infrared absorption spectrum is calculated with a dynamical matrix model based on first-principles total-energy calculations describing the potential energy for the nuclear motions. Spectral features and isotope shifts are calculated and compared with available experimental results. From new spectroscopic data on natural and on quasimonoisotopic germanium samples, new isotope shifts have been obtained and compared with the theoretical predictions. The low-energy spectrum is analyzed in terms of a hindered rotor model. A fair understanding of the center is achieved, which is then compared with interstitial oxygen in silicon. The oxygen atom is nontrivially quantum delocalized both in silicon and in germanium, but the physics is shown to be very different: while the Si-O-Si quasimolecule is essentially linear, the Ge-O-Ge structure is puckered. The delocalization in a highly anharmonic potential well of oxygen in silicon is addressed using path-integral Monte Carlo simulations, for comparison with the oxygen rotation in germanium. The understanding achieved with this new information allows us to explain the striking differences between both systems, in both the infrared and the far-infrared spectral regions, and the prediction of the existence of hidden vibrational modes, never directly observed experimentally, but soundly supported by the isotope-shift analysis. {copyright} {ital 1997} {ital The American Physical Society}

  4. Interstitial oxygen in germanium and silicon

    Artacho, Emilio; Ynduráin, Félix; Pajot, Bernard; Ramírez, Rafael; Herrero, Carlos P.; Khirunenko, Ludmila I.; Itoh, Kohei M.; Haller, Eugene E.

    1997-08-01

    The microscopic structure of interstitial oxygen in germanium and its associated dynamics are studied both experimentally and theoretically. The infrared absorption spectrum is calculated with a dynamical matrix model based on first-principles total-energy calculations describing the potential energy for the nuclear motions. Spectral features and isotope shifts are calculated and compared with available experimental results. From new spectroscopic data on natural and on quasimonoisotopic germanium samples, new isotope shifts have been obtained and compared with the theoretical predictions. The low-energy spectrum is analyzed in terms of a hindered rotor model. A fair understanding of the center is achieved, which is then compared with interstitial oxygen in silicon. The oxygen atom is nontrivially quantum delocalized both in silicon and in germanium, but the physics is shown to be very different: while the Si-O-Si quasimolecule is essentially linear, the Ge-O-Ge structure is puckered. The delocalization in a highly anharmonic potential well of oxygen in silicon is addressed using path-integral Monte Carlo simulations, for comparison with the oxygen rotation in germanium. The understanding achieved with this new information allows us to explain the striking differences between both systems, in both the infrared and the far-infrared spectral regions, and the prediction of the existence of hidden vibrational modes, never directly observed experimentally, but soundly supported by the isotope-shift analysis.

  5. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  6. Indium-carbon pairs in germanium

    Tessema, G; Vianden, R [Helmholtz Institut fuer Strahlen-und Kernphysik, Universitaet Bonn, Nussallee 14-16, 53115 Bonn (Germany)

    2003-08-06

    The interactions of carbon with the probe nucleus {sup 111}In have been studied in germanium using the perturbed angular correlation method, which has the ability to detect the microscopic environments of the probe atom by means of the interaction of the nuclear moments of the probe with the surrounding electromagnetic fields. At high dose carbon implantation in germanium two complexes have been identified by their unique quadrupole interaction frequencies. An interaction frequency of {nu}{sub Q1} = 207(1) MHz ({eta} = 0.16(3)) appeared at annealing temperatures below 650 deg. C. Above 650 deg. C, it was replaced by a second interaction frequency of {nu}{sub Q2} 500(1) MHz ({eta} = 0). The frequencies are attributed to two different carbon-indium pairs. The orientation of the corresponding electric field gradients and the thermal stability of the defect complexes are studied.

  7. Spin transport in p-type germanium.

    Rortais, F; Oyarzún, S; Bottegoni, F; Rojas-Sánchez, J-C; Laczkowski, P; Ferrari, A; Vergnaud, C; Ducruet, C; Beigné, C; Reyren, N; Marty, A; Attané, J-P; Vila, L; Gambarelli, S; Widiez, J; Ciccacci, F; Jaffrès, H; George, J-M; Jamet, M

    2016-04-27

    We report on the spin transport properties in p-doped germanium (Ge-p) using low temperature magnetoresistance measurements, electrical spin injection from a ferromagnetic metal and the spin pumping-inverse spin Hall effect method. Electrical spin injection is carried out using three-terminal measurements and the Hanle effect. In the 2-20 K temperature range, weak antilocalization and the Hanle effect provide the same spin lifetime in the germanium valence band (≈1 ps) in agreement with predicted values and previous optical measurements. These results, combined with dynamical spin injection by spin pumping and the inverse spin Hall effect, demonstrate successful spin accumulation in Ge. We also estimate the spin Hall angle θ(SHE) in Ge-p (6-7 x 10(-4) at room temperature, pointing out the essential role of ionized impurities in spin dependent scattering.

  8. The International Germanium Experiment (IGEX) in 1993

    Avignone, F.T. (University of South Carolina, Columbia, SC 29208 (United States)); Brodzinski, R.L. (Pacific Northwest Laboratory, Battelle Blvd., Richland, WA 99352 (United States)); Collar, J.I. (University of South Carolina, Columbia, SC 29208 (United States)); Courant, H. (University of Minnesota, Minneapolis, MN 55455 (United States)); Garcia, E. (University of Zaragoza, Zaragoza (Spain)); Guerard, C.K. (University of South Carolina, Columbia, SC 29208 (United States)); Hensley, W.K. (Pacific Northwest Laboratory, Battelle Blvd., Richland, WA 99352 (United States)); Kirpichnikov, I.V. (Institute for Theoretical and Experimental Physics, 117 259 Moscow (Russian Federation)); Klimenko, A.A. (Institute for Nuclear Research, Baksan Neutrino Observatory, 361 609 Neutrino (Russian Federation)); Morales, A. (University of Zaragoza, Zaragoza (Spain)); Morales, J. (University of Zaragoza, Zaragoza (Spain)); Miley, H.S. (Pacific Northwest Laboratory, Battelle Blvd., Richland, WA

    1994-05-01

    The data collected from the first set of three IGEX enriched germanium detectors have been analyzed. The best background obtained was less than 0.3counts/keV/kg/y near 2MeV, obtained in the Homestake gold mine in Lead, SD, USA. Data combined from all the detectors yield T[sub 1/2][sup 0][>=]qslant1.0x10[sup 24]y (90% CL). The first detector produced in the second phase of the experiment is a 2.15kg germanium crystal of 2.16keV FWHM at 1332keV. Several experiences with the first group of detectors have led to improvements in the mechanical design of the copper cryostat. Also, low background materials research done in the last two years has lowered the specific activity of the electroformed copper. The new detector is currently operating in the Homestake gold mine. ((orig.))

  9. The International Germanium Experiment (IGEX) in 1993

    Avignone, F. T.; Brodzinski, R. L.; Collar, J. I.; Courant, H.; Garcia, E.; Guerard, C. K.; Hensley, W. K.; Kirpichnikov, I. V.; Klimenko, A. A.; Morales, A.; Morales, J.; Miley, H. S.; Nunez-Lagos, R.; Osetrov, S. B.; Pogosov, V. S.; Pomansky, A. A.; Puimedon, J.; Reeves, J. H.; Ruddick, K.; Saenz, C.; Salinas, A.; Sarsa, M. L.; Smolnikov, A. A.; Starostin, A. S.; Tamanyan, A. G.; Umatov, V. I.; Vasiliev, S. I.; Villar, J. A.

    1994-05-01

    The data collected from the first set of three IGEX enriched germanium detectors have been analyzed. The best background obtained was less than 0.3 counts/keV/kg/y near 2 MeV, obtained in the Homestake gold mine in Lead, SD, USA. Data combined from all the detectors yield T{1}/{2}0τ ≥ 1.0 × 10 24y (90% CL) . The first detector produced in the second phase of the experiment is a 2.15 kg germanium crystal of 2.16 keV FWHM at 1332 keV. Several experiences with the first group of detectors have led to improvements in the mechanical design of the copper cryostat. Also, low background materials research done in the last two years has lowered the specific activity of the electroformed copper. The new detector is currently operating in the Homestake gold mine.

  10. Vacancy-indium clusters in implanted germanium

    Chroneos, Alexander I.

    2010-04-01

    Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

  11. Smooth germanium nanowires prepared by a hydrothermal deposition process

    Pei, L.Z., E-mail: lzpei1977@163.com [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhao, H.S. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Tan, W. [Henkel Huawei Electronics Co. Ltd., Lian' yungang, Jiangsu 222006 (China); Yu, H.Y. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Chen, Y.W. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Fan, C.G. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhang, Qian-Feng, E-mail: zhangqf@ahut.edu.cn [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China)

    2009-11-15

    Smooth germanium nanowires were prepared using Ge and GeO{sub 2} as the starting materials and Cu sheet as the substrate by a simple hydrothermal deposition process. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations show that the germanium nanowires are smooth and straight with uniform diameter of about 150 nm in average and tens of micrometers in length. X-ray diffraction (XRD) and Raman spectrum of the germanium nanowires display that the germanium nanowires are mainly composed of cubic diamond phase. PL spectrum shows a strong blue light emission at 441 nm. The growth mechanism is also discussed.

  12. Development of segmented germanium detectors for neutrinoless double beta decay experiments

    Liu, Jing

    2009-06-09

    The results from neutrino oscillation experiments indicate that at least two neutrinos have mass. However, the value of the masses and whether neutrinos and anti-neutrinos are identical, i.e., Majorana particles, remain unknown. Neutrinoless double beta decay experiments can help to improve our understanding in both cases and are the only method currently possible to tackle the second question. The GERmanium Detector Array (GERDA) experiment, which will search for the neutrinoless double beta decay of {sup 76}Ge, is currently under construction in Hall A of the INFN Gran Sasso National Laboratory (LNGS), Italy. In order to achieve an extremely low background level, segmented germanium detectors are considered to be operated directly in liquid argon which serves simultaneously as cooling and shielding medium. Several test cryostats were built at the Max-Planck-Institut fuer Physik in Muenchen to operate segmented germanium detectors both in vacuum and submerged in cryogenic liquid. The performance and the background discrimination power of segmented germanium detectors were studied in detail. It was proven for the first time that segmented germanium detectors can be operated stably over long periods submerged in a cryogenic liquid. It was confirmed that the segmentation scheme employed does well in the identification of photon induced background and demonstrated for the first time that also neutron interactions can be identified. The C++ Monte Carlo framework, MaGe (Majorana-GERDA), is a joint development of the Majorana and GERDA collaborations. It is based on GEANT4, but tailored especially to simulate the response of ultra-low background detectors to ionizing radiation. The predictions of the simulation were veri ed to be accurate for a wide range of conditions. Some shortcomings were found and corrected. Pulse shape analysis is complementary to segmentation in identifying background events. Its efficiency can only be correctly determined using reliable pulse

  13. Platinum germanium ordering in UPtGe

    Hoffmann, Rolf-Dieter; Pöttgen, Rainer; Lander, Gerry H.; Rebizant, Jean

    2001-09-01

    The non-centrosymmetric structure of UPtGe was investigated by X-ray diffraction on both powders and single crystals: EuAuGe type, Imm2, a=432.86(5), b=718.81(8), c=751.66(9) pm, wR2=0.0738 for 399 F2 values and 22 variables. The platinum and germanium atoms form two-dimensional layers of puckered Pt 3Ge 3 hexagons with short PtGe intralayer distances of 252 and 253 pm. These condensed two-dimensionally infinite nets are interconnected to each other via weak PtPt contacts with bond distances of 300 pm. The two crystallographically independent uranium atoms are situated above and below the six-membered platinum-germanium rings. The U1 atoms have six closer germanium neighbors while the U2 atoms have six closer platinum neighbors. The group-subgroup relation with the KHg 2 type structure is presented.

  14. Bottom-up assembly of metallic germanium.

    Scappucci, Giordano; Klesse, Wolfgang M; Yeoh, LaReine A; Carter, Damien J; Warschkow, Oliver; Marks, Nigel A; Jaeger, David L; Capellini, Giovanni; Simmons, Michelle Y; Hamilton, Alexander R

    2015-08-10

    Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material, a light emitting medium in silicon-integrated lasers, and a plasmonic conductor for bio-sensing. Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp doping profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10(19) to 10(20) cm(-3)) low-resistivity (10(-4)Ω · cm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based doping technologies. We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.

  15. Performance of bare high-purity germanium detectors in liquid argon for the GERDA experiment

    Heider, Marik Barnabé; Chkvorets, Oleg; Di Vacri, Assunta; Gusev, Konstantin; Schönert, Stefan; Shirchenko, Mark

    2008-01-01

    The GERmanium Detector Array, GERDA, will search for neutrinoless double beta decay in 76Ge at the National Gran Sasso Laboratory of the INFN. Bare high-purity germanium detectors enriched in 76Ge will be submerged in liquid argon serving simultaneously as a shield against external radioactivity and as a cooling medium. In GERDA Phase-I, reprocessed enriched-Ge detectors, which were previously operated by the Heidelberg-Moscow and IGEX collaborations, will be redeployed. Before operating the enriched detectors, tests are performed with non-enriched bare HPGe detectors in the GERDA underground Detector Laboratory to test the Phase-I detector assembly, the detector handling protocols, the refurbishment technology and to study the long-term stability in liquid argon. The leakage currents in liquid argon and liquid nitrogen have been extensively studied under varying gamma irradiation conditions. In total three non-enriched high-purity p-type prototype germanium detectors have been operated successfully. The dete...

  16. Limits on Light WIMPs with a Germanium Detector at 172 eVee threshold at the China Jinping Underground Laboratory

    Liu, S K; Kang, K J; Cheng, J P; Wong, H T; Li, Y J; Lin, S T; Chang, J P; Chen, N; Chen, Q H; Chen, Y H; Chuang, Y C; Deng, Z; Du, Q; Gong, H; Hao, X Q; He, H J; He, Q J; Huang, H X; Huang, T R; Jiang, H; Li, H B; Li, J M; Li, J; Li, X; Li, X Q; Li, X Y; Li, Y L; Liao, H Y; Lin, F K; Lü, L C; Ma, H; Mao, S J; Qin, J Q; Ren, J; Ruan, X C; Shen, M B; Singh, L; Singh, M K; Soma, A K; Su, J; Tang, C J; Tseng, C H; Wang, J M; Wang, L; Wang, Q; Wu, S Y; Wu, Y C; Xianyu, Z Z; Xiao, R Q; Xing, H Y; Xu, F Z; Xu, Y; Xu, X J; Xue, T; Yang, C W; Yang, L T; Yang, S W; Yi, N; Yu, C X; Yu, H; Yu, X Z; Zeng, X H; Zeng, Z; Zhang, L; Zhang, Y H; Zhao, M G; Zhao, W; Zhou, Z Y; Zhu, J J; Zhu, W B; Zhu, X Z; Zhu, Z H

    2014-01-01

    The China Dark Matter Experiment reports results on light WIMP dark matter searches at the China Jinping Underground Laboratory with a germanium detector array with a total mass of 20 g. The physics threshold achieved is 172 eVee at 50% signal efficiency. With 0.784 kg-days of data, exclusion region on spin-independent coupling with the nucleon is derived, improving over our earlier bounds at WIMP mass less than 4.6 GeV.

  17. Low Power Silicon Germanium Electronics for Microwave Radiometers

    Doiron, Terence A.; Krebs, Carolyn (Technical Monitor)

    2001-01-01

    Space-based radiometric observations of key hydrological parameters (e.g., soil moisture) at the spatial and temporal scales required in the post-2002 era face significant technological challenges. These measurements are based on relatively low frequency thermal microwave emission (at 1.4 GHz for soil moisture and salinity, 10 GHz and up for precipitation, and 19 and 37 GHz for snow). The long wavelengths at these frequencies coupled with the high spatial and radiometric resolutions required by the various global hydrology communities necessitate the use of very large apertures (e.g., greater than 20 m at 1.4 GHz) and highly integrated stable RF electronics on orbit. Radio-interferometric techniques such as Synthetic Thinned Array Radiometry (STAR), using silicon germanium (SiGe) low power radio frequency integrated circuits (RFIC), is one of the most promising technologies to enable very large non-rotating apertures in space. STAR instruments are composed of arrays of small antenna/receiving elements that are arranged so that the collecting area is smaller than an equivalent real aperture system, allowing very high packing densities for launch. A 20 meter aperture at L-band, for example, will require greater than 1000 of these receiving elements. SiGe RFIC's reduce power consumption enough to make an array like this possible in the power-limited environment of space flight. An overview of the state-of-the-art will be given, and current work in the area of SiGe radiometer development for soil moisture remote sensing will be discussed.

  18. Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared

    Fischer, Marco P.; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J.; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

    2016-07-01

    Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

  19. Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared.

    Fischer, Marco P; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

    2016-07-22

    Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

  20. Ultraviolet-light-induced processes in germanium-doped silica

    Kristensen, Martin

    2001-01-01

    A model is presented for the interaction of ultraviolet (UV) light with germanium-doped silica glass. It is assumed that germanium sites work as gates for transferring the excitation energy into the silica. In the material the excitation induces forbidden transitions to two different defect states...

  1. Germanium: From Its Discovery to SiGe Devices

    Haller, E.E.

    2006-06-14

    Germanium, element No.32, was discovered in 1886 by Clemens Winkler. Its first broad application was in the form of point contact Schottky diodes for radar reception during WWII. The addition of a closely spaced second contact led to the first all-solid-state electronic amplifier device, the transistor. The relatively low bandgap, the lack of a stable oxide and large surface state densities relegated germanium to the number 2 position behind silicon. The discovery of the lithium drift process, which made possible the formation of p-i-n diodes with fully depletable i-regions several centimeters thick, led germanium to new prominence as the premier gamma-ray detector. The development of ultra-pure germanium yielded highly stable detectors which have remained unsurpassed in their performance. New acceptors and donors were discovered and the electrically active role of hydrogen was clearly established several years before similar findings in silicon. Lightly doped germanium has found applications as far infrared detectors and heavily Neutron Transmutation Doped (NTD) germanium is used in thermistor devices operating at a few milliKelvin. Recently germanium has been rediscovered by the silicon device community because of its superior electron and hole mobility and its ability to induce strains when alloyed with silicon. Germanium is again a mainstream electronic material.

  2. MAJORANA Collaboration's Experience with Germanium Detectors

    Mertens, S. [Lawrence Berkeley National Laboratory (LBNL); Abgrall, N. [Lawrence Berkeley National Laboratory (LBNL); Avignone, III, F. T. [University of South Carolina/Oak Ridge National Laboratory (ORNL); Barabash, A.S. [Institute of Theoretical & Experimental Physics (ITEP), Moscow, Russia; Bertrand, F. E. [Oak Ridge National Laboratory (ORNL); Efremenko, Yuri [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL); Galindo-Uribarri, A [Oak Ridge National Laboratory (ORNL); Radford, D. C. [Oak Ridge National Laboratory (ORNL); Romero-Romero, E. [UTK/ORNL; Varner, R. L. [Oak Ridge National Laboratory (ORNL); White, B. R. [Oak Ridge National Laboratory (ORNL); Wilkerson, J. F. [UNC/Triangle Univ. Nucl. Lab, Durham, NC/ORNL; Yu, C.-H. [Oak Ridge National Laboratory (ORNL); Majorana, [MAJORANA Collaboration

    2015-01-01

    The goal of the Majorana Demonstrator project is to search for 0v beta beta decay in Ge-76. Of all candidate isotopes for 0v beta beta, Ge-76 has some of the most favorable characteristics. Germanium detectors are a well established technology, and in searches for 0v beta beta, the high purity germanium crystal acts simultaneously as source and detector. Furthermore, p-type germanium detectors provide excellent energy resolution and a specially designed point contact geometry allows for sensitive pulse shape discrimination. This paper will summarize the experiences the MAJORANA collaboration made with enriched germanium detectors manufactured by ORTEC (R)(R). The process from production, to characterization and integration in MAJORANA mounting structure will be described. A summary of the performance of all enriched germanium detectors will be given.

  3. AGATA - Advanced Gamma Tracking Array

    Akkoyun, S; Alikhani, B; Ameil, F; de Angelis, G; Arnold, L; Astier, A; Ataç, A; Aubert, Y; Aufranc, C; Austin, A; Aydin, S; Azaiez, F; Badoer, S; Balabanski, D L; Barrientos, D; Baulieu, G; Baumann, R; Bazzacco, D; Beck, F A; Beck, T; Bednarczyk, P; Bellato, M; Bentley, M A; Benzoni, G; Berthier, R; Berti, L; Beunard, R; Bianco, G Lo; Birkenbach, B; Bizzeti, P G; Bizzeti-Sona, A M; Blanc, F Le; Blasco, J M; Blasi, N; Bloor, D; Boiano, C; Borsato, M; Bortolato, D; Boston, A J; Boston, H C; Bourgault, P; Boutachkov, P; Bouty, A; Bracco, A; Brambilla, S; Brawn, I P; Brondi, A; Broussard, S; Bruyneel, B; Bucurescu, D; Burrows, I; Bürger, A; Cabaret, S; Cahan, B; Calore, E; Camera, F; Capsoni, A; Carrió, F; Casati, G; Castoldi, M; Cederwall, B; Cercus, J -L; Chambert, V; Chambit, M El; Chapman, R; Charles, L; Chavas, J; Clément, E; Cocconi, P; Coelli, S; Coleman-Smith, P J; Colombo, A; Colosimo, S; Commeaux, C; Conventi, D; Cooper, R J; Corsi, A; Cortesi, A; Costa, L; Crespi, F C L; Cresswell, J R; Cullen, D M; Curien, D; Czermak, A; Delbourg, D; Depalo, R; Descombes, T; Désesquelles, P; Detistov, P; Diarra, C; Didierjean, F; Dimmock, M R; Doan, Q T; Domingo-Pardo, C; Doncel, M; Dorangeville, F; Dosme, N; Drouen, Y; Duchêne, G; Dulny, B; Eberth, J; Edelbruck, P; Egea, J; Engert, T; Erduran, M N; Ertürk, S; Fanin, C; Fantinel, S; Farnea, E; Faul, T; Filliger, M; Filmer, F; Finck, Ch; de France, G; Gadea, A; Gast, W; Geraci, A; Gerl, J; Gernhäuser, R; Giannatiempo, A; Giaz, A; Gibelin, L; Givechev, A; Goel, N; González, V; Gottardo, A; Grave, X; Grȩbosz, J; Griffiths, R; Grint, A N; Gros, P; Guevara, L; Gulmini, M; Görgen, A; Ha, H T M; Habermann, T; Harkness, L J; Harroch, H; Hauschild, K; He, C; Hernández-Prieto, A; Hervieu, B; Hess, H; Hüyük, T; Ince, E; Isocrate, R; Jaworski, G; Johnson, A; Jolie, J; Jones, P; Jonson, B; Joshi, P; Judson, D S; Jungclaus, A; Kaci, M; Karkour, N; Karolak, M; Kaşkaş, A; Kebbiri, M; Kempley, R S; Khaplanov, A; Klupp, S; Kogimtzis, M; Kojouharov, I; Korichi, A; Korten, W; Kröll, Th; Krücken, R; Kurz, N; Ky, B Y; Labiche, M; Lafay, X; Lavergne, L; Lazarus, I H; Leboutelier, S; Lefebvre, F; Legay, E; Legeard, L; Lelli, F; Lenzi, S M; Leoni, S; Lermitage, A; Lersch, D; Leske, J; Letts, S C; Lhenoret, S; Lieder, R M; Linget, D; Ljungvall, J; Lopez-Martens, A; Lotodé, A; Lunardi, S; Maj, A; van der Marel, J; Mariette, Y; Marginean, N; Marginean, R; Maron, G; Mather, A R; Mȩczyński, W; Mendéz, V; Medina, P; Melon, B; Menegazzo, R; Mengoni, D; Merchan, E; Mihailescu, L; Michelagnoli, C; Mierzejewski, J; Milechina, L; Million, B; Mitev, K; Molini, P; Montanari, D; Moon, S; Morbiducci, F; Moro, R; Morrall, P S; Möller, O; Nannini, A; Napoli, D R; Nelson, L; Nespolo, M; Ngo, V L; Nicoletto, M; Nicolini, R; Noa, Y Le; Nolan, P J; Norman, M; Nyberg, J; Obertelli, A; Olariu, A; Orlandi, R; Oxley, D C; Özben, C; Ozille, M; Oziol, C; Pachoud, E; Palacz, M; Palin, J; Pancin, J; Parisel, C; Pariset, P; Pascovici, G; Peghin, R; Pellegri, L; Perego, A; Perrier, S; Petcu, M; Petkov, P; Petrache, C; Pierre, E; Pietralla, N; Pietri, S; Pignanelli, M; Piqueras, I; Podolyak, Z; Pouhalec, P Le; Pouthas, J; Pugnére, D; Pucknell, V F E; Pullia, A; Quintana, B; Raine, R; Rainovski, G; Ramina, L; Rampazzo, G; La Rana, G; Rebeschini, M; Recchia, F; Redon, N; Reese, M; Reiter, P; Regan, P H; Riboldi, S; Richer, M; Rigato, M; Rigby, S; Ripamonti, G; Robinson, A P; Robin, J; Roccaz, J; Ropert, J -A; Rossé, B; Alvarez, C Rossi; Rosso, D; Rubio, B; Rudolph, D; Saillant, F; Şahin, E; Salomon, F; Salsac, M -D; Salt, J; Salvato, G; Sampson, J; Sanchis, E; Santos, C; Schaffner, H; Schlarb, M; Scraggs, D P; Seddon, D; Şenyiğit, M; Sigward, M -H; Simpson, G; Simpson, J; Slee, M; Smith, J F; Sona, P; Sowicki, B; Spolaore, P; Stahl, C; Stanios, T; Stefanova, E; Stézowski, O; Strachan, J; Suliman, G; Söderström, P -A; Tain, J L; Tanguy, S; Tashenov, S; Theisen, Ch; Thornhill, J; Tomasi, F; Toniolo, N; Touzery, R; Travers, B; Triossi, A; Tripon, M; Tun-Lanoë, K M M; Turcato, M; Unsworth, C; Ur, C A; Valiente-Dobon, J J; Vandone, V; Vardaci, E; Venturelli, R; Veronese, F; Veyssiere, Ch; Viscione, E; Wadsworth, R; Walker, P M; Warr, N; Weber, C; Weisshaar, D; Wells, D; Wieland, O; Wiens, A; Wittwer, G; Wollersheim, H J; Zocca, F; Zamfir, N V; Ziȩbliński, M; Zucchiatti, A

    2011-01-01

    The Advanced GAmma Tracking Array (AGATA) is a European project to develop and operate the next generation gamma-ray spectrometer. AGATA is based on the technique of gamma-ray energy tracking in electrically segmented high-purity germanium crystals. This technique requires the accurate determination of the energy, time and position of every interaction as a gamma ray deposits its energy within the detector volume. Reconstruction of the full interaction path results in a detector with very high efficiency and excellent spectral response. The realization of gamma-ray tracking and AGATA is a result of many technical advances. These include the development of encapsulated highly-segmented germanium detectors assembled in a triple cluster detector cryostat, an electronics system with fast digital sampling and a data acquisition system to process the data at a high rate. The full characterization of the crystals was measured and compared with detector-response simulations. This enabled pulse-shape analysis algorith...

  4. Yunnan Chihong Zinc & Germanium Co.,Ltd.Invested RMB 300 Million for Germanium Project with Output 30 Tons/Year

    2009-01-01

    <正>Recently,Yunnan Chihong Zinc & Germanium Co.,Ltd.,an A-share listed company held by Yunnan Metallurgical Group Co.,Ltd.,kicked off its construction of a project for comprehen- sive utilization of lead-zinc associated metal germanium resources to be output at 30 tons/year.It is introduced that the investment

  5. Tensile strain mapping in flat germanium membranes

    Rhead, S. D., E-mail: S.Rhead@warwick.ac.uk; Halpin, J. E.; Myronov, M.; Patchett, D. H.; Allred, P. S.; Wilson, N. R.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom); Shah, V. A. [Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom); Department of Engineering, University of Warwick, Coventry, CV4 7AL (United Kingdom); Kachkanov, V.; Dolbnya, I. P. [Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE (United Kingdom); Reparaz, J. S. [ICN2 - Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Sotomayor Torres, C. M. [ICN2 - Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

    2014-04-28

    Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal space maps were obtained with ∼4 μm spatial resolution, from which detailed information on the strain distribution, thickness, and crystalline tilt of the membrane was obtained. We are able to detect a systematic strain variation across the membranes, but show that this is negligible in the context of using the membranes as platforms for further growth. In addition, we show evidence that the interface and surface quality is improved by suspending the Ge.

  6. Silicon germanium mask for deep silicon etching

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  7. Silicon/Germanium Molecular Beam Epitaxy

    2006-01-01

    Molecular Beam Epitaxy (MBE) is a well-established method to grow low-dimensional structures for research applications. MBE has given many contributions to the rapid expanding research-area of nano-technology and will probably continuing doing so. The MBE equipment, dedicated for Silicon/Germanium (Si/Ge) systems, at Karlstads University (Kau) has been studied and started for the first time. In the work of starting the system, all the built in interlocks has been surveyed and connected, and t...

  8. Radiation piezoelectric effect in germanium single crystals

    Kikoin, I.K.; Kikoin, L.I.; Lazarev, S.D.

    1977-06-01

    Irradiation with ionizing particles of a germanium single crystal and uniaxial deformation at right-angles to the particle beam produced an electric field and a corresponding emf due to the radiation piezoelectric effect. Measurements were carried out when such a single crystal was irradiated with ..cap alpha.. particles and protons. The piezoelectric emf increased linearly with the compressive stress and the ..cap alpha..-particle flux intensity. The emf depended weakly on the particle energy. The observed effect was due to the anisotropy resulting from uniaxial deformation.

  9. Germanium anode with excellent lithium storage performance in a germanium/lithium-cobalt oxide lithium-ion battery.

    Li, Xiuwan; Yang, Zhibo; Fu, Yujun; Qiao, Li; Li, Dan; Yue, Hongwei; He, Deyan

    2015-02-24

    Germanium is a highly promising anode material for lithium-ion batteries as a consequence of its large theoretical specific capacity, good electrical conductivity, and fast lithium ion diffusivity. In this work, Co3O4 nanowire array fabricated on nickel foam was designed as a nanostructured current collector for Ge anode. By limiting the voltage cutoff window in an appropriate range, the obtained Ge anode exhibits excellent lithium storage performance in half- and full-cells, which can be mainly attributed to the designed nanostructured current collector with good conductivity, enough buffering space for the volume change, and shortened ionic transport length. More importantly, the assembled Ge/LiCoO2 full-cell shows a high energy density of 475 Wh/kg and a high power density of 6587 W/kg. A high capacity of 1184 mA h g(-1) for Ge anode was maintained at a current density of 5000 mA g(-1) after 150 cycles.

  10. Effects of Germanium on Movement of Dislocations in p-Type Czochralski Silicon

    2006-01-01

    By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon was investigated. Experimental results show that the dislocations in germanium-doped Czochralski silicon move shorter and slower than those in Czochralski silicon undoping with germanium when the concentration of germanium is over 1×1018 cm-3. The retarding velocity of dislocations is contributed to the dislocations pinning effect of the strain field introduced by the high concentration germanium, and the Ge4B cluster and the oxygen precipitation those are preferred to form at higher concentration germanium.

  11. Experimental test of the background rejection, through imaging capability, of a highly segmented AGATA germanium detector

    Doncel, M., E-mail: doncel@usal.e [Laboratorio de Radiaciones Ionizantes, Universidad de Salamanca (Spain); Recchia, F. [INFN sezione di Padova, Padova (Italy); Quintana, B. [Laboratorio de Radiaciones Ionizantes, Universidad de Salamanca (Spain); Gadea, A. [IFIC Valencia, Valencia (Spain); INFN Laboratori Nazionali di Legnaro, Legnaro (Italy); Farnea, E. [INFN sezione di Padova, Padova (Italy)

    2010-10-21

    The development of highly segmented germanium detectors as well as the algorithms to identify the position of the interaction within the crystal opens the possibility to locate the {gamma}-ray source using Compton imaging algorithms. While the Compton-suppression shield, coupled to the germanium detector in conventional arrays, works also as an active filter against the {gamma} rays originated outside the target, the new generation of position sensitive {gamma}-ray detector arrays has to fully rely on tracking capabilities for this purpose. In specific experimental conditions, as the ones foreseen at radioactive beam facilities, the ability to discriminate background radiation improves the sensitivity of the gamma spectrometer. In this work we present the results of a measurement performed at the Laboratori Nazionali di Legnaro (LNL) aiming the evaluation of the AGATA detector capabilities to discriminate the origin of the {gamma} rays on an event-by-event basis. It will be shown that, exploiting the Compton scattering formula, it is possible to track back {gamma} rays coming from different positions, assigning them to specific emitting locations. These imaging capabilities are quantified for a single crystal AGATA detector.

  12. Oxygen defect processes in silicon and silicon germanium

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Faculty of Engineering and Computing, Coventry University, Priory Street, Coventry CV1 5FB (United Kingdom); Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Sgourou, E. N.; Londos, C. A. [Solid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens (Greece); Schwingenschlögl, U. [PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia)

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  13. Temperature-dependant study of phosphorus ion implantation in germanium

    Razali, M. A.; Smith, A. J.; Jeynes, C.; Gwilliam, R. M.

    2012-11-01

    We present experimental results on shallow junction formation in germanium by phosphorus ion implantation and standard rapid thermal processing. An attempt is made to improve phosphorus activation by implanting phosphorus at high and low temperature. The focus is on studying the germanium damage and phosphorus activation as a function of implant temperature. Rutherford backscattering spectrometry with channelling and Hall Effect measurements are employed for characterisation of germanium damage and phosphorus activation, respectively. High and low temperature implants were found to be better compared to room temperature implant.

  14. Oxygen defect processes in silicon and silicon germanium

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  15. Electronic states of germanium grown under micro-gravity condition

    Sugahara, A. [Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan)]. E-mail: sugahara@tsurugi.phys.sci.osaka-u.ac.jp; Ogawa, T. [Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Fujii, K. [Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Ohyama, T. [Liberal Arts, Fukui University of Technology, 3-6-1 Gakuen, Fukui, Fukui 910-8505 (Japan); Nakata, J. [Kyoto Semiconductor Corp. 418-9 Yodo Saime-cho, Fushimi-ku, Kyoto 613-0915 (Japan)

    2006-04-01

    Magneto-optical absorption measurements of Sb-doped germaniums grown under micro-gravity condition were carried out to investigate the influence of the gravity on crystal growth, using far-infrared laser and microwave. For comparison, we prepared two germanium crystals grown in the same conditions except the gravity conditions. In spite of the quite short growth period, the germanium grown under micro-gravity has a quite good quality. The lineshape analysis of Zeeman absorption peaks due to donor electrons indicates the existence of residual thermal acceptors.

  16. The Genesis of Lincang Germanium Deposit—A Preliminary Investigation

    胡瑞忠; 叶造军; 等

    1996-01-01

    The mechanism of formation of the Lincang germanium deposit is discussed in the light of the spatial distribution of Ge-rich coal and siliceous rocks,the sulfur isotopic composition of pyrite in the Ge-rich coal,the variation of Ge abundance in the coal seams and the geochemical characteristics of the siliceous rocks.The results show that the siliceous rocks intercalated with the coal seamw were deposited from a hyrothermal medium through which germanium was enriched in the coal beds.The primary source of germanium is thought to be the Gerich granite in the basement of the sedimentary basin.

  17. Heteroepitaxial growth of relaxed germanium on silicon

    Nayfeh, Ammar

    Germanium has a many advantages to silicon as a semiconductor material. Most importantly, Ge has a larger lattice mobility (hole and electron) compared to Si. The larger mobility provides a higher source injection velocity, which translates into higher drive current and smaller gate delay. In addition, the near-infrared photodetection and compatibility with Si technology of Ge-based materials, allow simultaneous fabrication of photodetectors and Si CMOS receiver circuits in a monolithically integrated fashion. The main disadvantage is that germanium based oxides are not stable and but rather soluble in water. But the inevitable shift to high-kappa/metal gate has made Ge a serious option nevertheless. In order for the semiconductor industry to take advantage of the properties of Ge, heterogeneous integration of Ge and Si must be possible since using bulk Ge is not viable. However, Ge growth on Si is hampered by the large lattice mismatch (4%) between Ge and Si which results in growth that is dominated by "islanding" and misfit dislocations. The following thesis, investigates both the islanding and dislocation density issues associated with this problem. A 90% reduction of surface roughness by hydrogen annealing is demonstrated accompanied with a theoretical model to explain these results. Using multi-steps of growth and hydrogen annealing, Ge layers on Si were achieved with dislocation density as low as 1x107cm-2 and Rrms surface roughness of 2.5nm. The method was patented and named, Multiple Hydrogen Annealing for Heteroexpitaxy (MHAH). A complete experimentally based theoretical model is provided that explains these results. In addition, MOSCAPS, a pMOS transistor, and a MSM photodetector are fabricated on the MHAH-Ge substrates. Also high-kappa/metal gate compatibility is demonstrated on MHAH-Ge. The electrical results indicate that MHAH-Ge approaches the electrical quality of bulk Ge. These results point to a promising step in achieving heterogeneous integration

  18. Germanium 70: a gamma ray detector for astrophysics; Le germanium 70: un detecteur de rayons gamma en astrophysique

    Durouchoux, P. [CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d`Astrophysique, de la Physique des Particules, de la Physique Nucleaire et de l`Instrumentation Associee

    1994-12-31

    A thorough study concerning the background noise generated from the germanium detectors used in astrophysics spatial experiences, is presented. These detectors, selected for their energy high definition, are sensitive to cosmic radiations that activate some isotopes contained in the natural germanium and induce background noise through a beta+ decay. This noise component may be notably reduced with utilization of {sup 70}Ge isotope enriched detectors, which do not present such interactions. The predictions have been verified through space tests conducted from Australia in 1992. Preliminary results and prospectives for astrophysics application of the Germanium 70 isotope, are discussed. 6 figs., 2 tabs., 3 refs.

  19. Positron annihilation in neutron-irradiated germanium

    Bartenev, G.M.; Bardyshev, I.I.; Erchak, D.P.; Stel' makh, V.F.; Tsyganov, A.D.

    1979-04-01

    The annealing of radiation defects in a germanium single crystal irradiated with 10/sup 18/ neutrons/cm/sup 2/ was studied by positron annihilation, ESR, and resistivity measurements. It was found that positrons are trapped by radiation defects. The intensity of the narrow component of the angular correlation of the annihilation radiation yielded the concentration of defect clusters in the irradiated sample n/sub d/approx. =3 x 10/sup 14/ cm/sup -3/. Three characteristic annealing stages were identified. At 160--200 /sup 0/C, point defects were annealed within the crystal. At 200--320 /sup 0/C, there was ''loosening'' of the clusters, and the charge state of the defects changed. At 320--550 /sup 0/C, the clusters were annealed.

  20. Germanium detectors and natural radioactivity in food

    Garbini, Lucia [Max-Planck-Institut fuer Physik, Muenchen (Germany); Collaboration: GeDet-Collaboration

    2013-07-01

    Potassium is a very important mineral for many physiological processes, like fluid balance, protein synthesis and signal transmission in nerves. Many aliments like raisins, bananas or chocolate contain potassium. Natural potassium contains 0.012% of the radioactive isotope Potassium 40. This isotope decays via β{sup +} decay into a metastable state of Argon 40, which reaches its ground state emitting a gamma of 1460 keV. A commercially produced Germanium detector has been used to measure the energy spectra of different selected food samples. It was calibrated with KCl and potassium contents were extracted. Results verify the high potassium content of commonly recommended food samples. However, the measurement quantitatively differ from the expectations in several cases. One of the most interesting results concerns chocolate bars with different percentages of cacao.

  1. Synthesis of silicon and germanium nanowires.

    Clement, Teresa J. (Arizona State University); Hsu, Julia W. P.

    2007-11-01

    The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silane, germane, disilane and digermane precursor gases has been investigated. The nanowire growth process combines in situ gold seed formation by vapor deposition on atomically clean silicon (111) surfaces, in situ growth from the gaseous precursor(s), and real-time monitoring of nanowire growth as a function of temperature and pressure by a novel optical reflectometry technique. A significant dependence on precursor pressure and growth temperature for the synthesis of silicon and germanium nanowires is observed, depending on the stability of the specific precursor used. Also, the presence of a nucleation time for the onset of nanowire growth has been found using our new in situ optical reflectometry technique.

  2. Raman spectroscopy of hydrogen molecules in germanium

    Hiller, M. [Technische Universitaet Dresden, 01062 Dresden (Germany)]. E-mail: martin.hiller@physik.phy.tu-dresden.de; Lavrov, E.V. [Technische Universitaet Dresden, 01062 Dresden (Germany); Weber, J. [Technische Universitaet Dresden, 01062 Dresden (Germany)

    2006-04-01

    Single-crystalline germanium samples exposed to hydrogen and/or deuterium plasma are studied by Raman scattering. Two bands at 1980 and 4155cm{sup -1} are assigned to local vibrational modes of Ge-H and H{sub 2}, respectively. Polarization sensitive Raman scattering spectra suggest that the plasma treatment results in {l_brace}111{r_brace} platelets whose basic units are Ge-H bonds. The signal at 4155cm{sup -1} is shown to result from molecular hydrogen trapped within these platelets. Another broad Raman signal around 3930cm{sup -1} seems to be due to H{sub 2} trapped in some other type of voids formed during the plasma treatment. Two sharp peaks at 3826 and 3834cm{sup -1} are assigned to ortho- and para-H{sub 2} trapped at the interstitial T site.

  3. Solid solubility of germanium in silver

    Kazemi, Hamed [Laboratory of Mechanical Metallurgy, Ecole Polytechnique Federale de Lausanne, EPFL, CH-1015 Lausanne (Switzerland); Weber, Ludger, E-mail: ludger.weber@epfl.ch [Laboratory of Mechanical Metallurgy, Ecole Polytechnique Federale de Lausanne, EPFL, CH-1015 Lausanne (Switzerland)

    2012-09-20

    Highlights: Black-Right-Pointing-Pointer The solvus line in the binary Ag-Ge system has been assessed based on measurements of electrical resistivity and specific gravity. Black-Right-Pointing-Pointer The two measurement techniques yield close agreement. Black-Right-Pointing-Pointer The data found in this contribution indicate lower solid solubility than in previous assessments. Black-Right-Pointing-Pointer Redlich-Kister parameters have been evaluated to describe the solvus line. - Abstract: The solid solubility of germanium in silver has been measured in the temperature range of 520 K to 913 K via measurements of density and of electrical conductivity of two near-eutectic Ag-Ge alloys. The atomic fraction of germanium in solid solution varied between 0.014 and 0.089 over the mentioned range of temperature and an extrapolated maximum solubility of 0.093 at the eutectic temperature of 924 K is found. For samples with spheroidized Ge-particles before the equilibrium heat treatments at low temperature for 24 or 48 h, thermodynamic equilibrium was supposedly not achieved at temperatures below 723 K. Much longer heat treatments (tens of days) on the significantly finer as-cast microstructure allowed to reach equilibrium probably down to 600 K. Independently of whether thermodynamic equilibrium was reached or not the electrical conductivity and the density measurements yielded good agreement typically within a few tenth of percent of atomic Ge-concentration in solid solution in {alpha}-Ag for a given temperature. The results are close to, yet consistently slightly lower than, the values given by Owen and Rowland on which the current assessment of the solvus in the Ag-Ge binary is based. More recent results by Filipponi and co-workers are clearly not in agreement with the data presented here.

  4. Electromechanically cooled germanium radiation detector system

    Lavietes, Anthony D.; Joseph Mauger, G.; Anderson, Eric H.

    1999-02-01

    We have successfully developed and fielded an electromechanically cooled germanium radiation detector (EMC-HPGe) at Lawrence Livermore National Laboratory (LLNL). This detector system was designed to provide optimum energy resolution, long lifetime, and extremely reliable operation for unattended and portable applications. For most analytical applications, high purity germanium (HPGe) detectors are the standard detectors of choice, providing an unsurpassed combination of high energy resolution performance and exceptional detection efficiency. Logistical difficulties associated with providing the required liquid nitrogen (LN) for cooling is the primary reason that these systems are found mainly in laboratories. The EMC-HPGe detector system described in this paper successfully provides HPGe detector performance in a portable instrument that allows for isotopic analysis in the field. It incorporates a unique active vibration control system that allows the use of a Sunpower Stirling cycle cryocooler unit without significant spectral degradation from microphonics. All standard isotopic analysis codes, including MGA and MGA++ [1], GAMANL [2], GRPANL [3]and MGAU [4], typically used with HPGe detectors can be used with this system with excellent results. Several national and international Safeguards organisations including the International Atomic Energy Agency (IAEA) and U.S. Department of Energy (DOE) have expressed interest in this system. The detector was combined with custom software and demonstrated as a rapid Field Radiometric Identification System (FRIS) for the U.S. Customs Service [5]. The European Communities' Safeguards Directorate (EURATOM) is field-testing the first Safeguards prototype in their applications. The EMC-HPGe detector system design, recent applications, and results will be highlighted.

  5. Lattice site and thermal stability of transition metals in germanium

    Augustyns, Valérie; Pereira, Lino

    Although the first transistor was based on germanium, current chip technology mainly uses silicon due to its larger abundance, a lower price and higher quality silicon-oxide. However, a very important goal in microelectronics is to obtain faster integrated circuits. The advantages of germanium compared to silicon (e.g. a higher mobility of the charge carriers) motivates further research on germanium based materials. Semiconductor doping (e.g. introducing impurities into silicon and germanium in order to alter - and control - their properties) can be done by ion implantation or by in situ doping, whereby the host material is doped during growth. This thesis focuses on introducing dopants by ion implantation. The implantation as well as the subsequent measurements were performed in ISOLDE (CERN) using the emission channeling technique. Although ion implantation generates undesired defects in the host material (e.g. vacancies), such damage can be reduced by performing the implantation at an elevated temperature....

  6. Optical gain in single tensile-strained germanium photonic wire.

    de Kersauson, M; El Kurdi, M; David, S; Checoury, X; Fishman, G; Sauvage, S; Jakomin, R; Beaudoin, G; Sagnes, I; Boucaud, P

    2011-09-12

    We have investigated the optical properties of tensile-strained germanium photonic wires. The photonic wires patterned by electron beam lithography (50 μm long, 1 μm wide and 500 nm thick) are obtained by growing a n-doped germanium film on a GaAs substrate. Tensile strain is transferred in the germanium layer using a Si₃N₄ stressor. Tensile strain around 0.4% achieved by the technique corresponds to an optical recombination of tensile-strained germanium involving light hole band around 1690 nm at room temperature. We show that the waveguided emission associated with a single tensile-strained germanium wire increases superlinearly as a function of the illuminated length. A 20% decrease of the spectral broadening is observed as the pump intensity is increased. All these features are signatures of optical gain. A 80 cm⁻¹ modal optical gain is derived from the variable strip length method. This value is accounted for by the calculated gain material value using a 30 band k · p formalism. These germanium wires represent potential building blocks for integration of nanoscale optical sources on silicon.

  7. Promoting cell proliferation using water dispersible germanium nanowires.

    Michael Bezuidenhout

    Full Text Available Group IV Nanowires have strong potential for several biomedical applications. However, to date their use remains limited because many are synthesised using heavy metal seeds and functionalised using organic ligands to make the materials water dispersible. This can result in unpredicted toxic side effects for mammalian cells cultured on the wires. Here, we describe an approach to make seedless and ligand free Germanium nanowires water dispersible using glutamic acid, a natural occurring amino acid that alleviates the environmental and health hazards associated with traditional functionalisation materials. We analysed the treated material extensively using Transmission electron microscopy (TEM, High resolution-TEM, and scanning electron microscope (SEM. Using a series of state of the art biochemical and morphological assays, together with a series of complimentary and synergistic cellular and molecular approaches, we show that the water dispersible germanium nanowires are non-toxic and are biocompatible. We monitored the behaviour of the cells growing on the treated germanium nanowires using a real time impedance based platform (xCELLigence which revealed that the treated germanium nanowires promote cell adhesion and cell proliferation which we believe is as a result of the presence of an etched surface giving rise to a collagen like structure and an oxide layer. Furthermore this study is the first to evaluate the associated effect of Germanium nanowires on mammalian cells. Our studies highlight the potential use of water dispersible Germanium Nanowires in biological platforms that encourage anchorage-dependent cell growth.

  8. Protective infrared antireflection coating based on sputtered germanium carbide

    Gibson, Des; Waddell, Ewan; Placido, Frank

    2011-09-01

    This paper describes optical, durablility and environmental performance of a germanium carbide based durable antireflection coating. The coating has been demonstrated on germanium and zinc selenide infra-red material however is applicable to other materials such as zinc sulphide. The material is deposited using a novel reactive closed field magnetron sputtering technique, offering significant advantages over conventional evaporation processes for germanium carbide such as plasma enhanced chemical vapour deposition. The sputtering process is "cold", making it suitable for use on a wide range of substrates. Moreover, the drum format provide more efficient loading for high throughput production. The use of the closed field and unbalanced magnetrons creates a magnetic confinement that extends the electron mean free path leading to high ion current densities. The combination of high current densities with ion energies in the range ~30eV creates optimum thin film growth conditions. As a result the films are dense, spectrally stable, supersmooth and low stress. Films incorporate low hydrogen content resulting in minimal C-H absorption bands within critical infra-red passbands such as 3 to 5um and 8 to 12um. Tuning of germanium carbide (Ge(1-x)Cx) film refractive index from pure germanium (refractive index 4) to pure germanium carbide (refractive index 1.8) will be demonstrated. Use of film grading to achieve single and dual band anti-reflection performance will be shown. Environmental and durability levels are shown to be suitable for use in harsh external environments.

  9. A germanium hybrid pixel detector with 55μm pixel size and 65,000 channels

    Pennicard, D.; Struth, B.; Hirsemann, H.; Sarajlic, M.; Smoljanin, S.; Zuvic, M.; Lampert, M. O.; Fritzsch, T.; Rothermund, M.; Graafsma, H.

    2014-12-01

    Hybrid pixel semiconductor detectors provide high performance through a combination of direct detection, a relatively small pixel size, fast readout and sophisticated signal processing circuitry in each pixel. For X-ray detection above 20 keV, high-Z sensor layers rather than silicon are needed to achieve high quantum efficiency, but many high-Z materials such as GaAs and CdTe often suffer from poor material properties or nonuniformities. Germanium is available in large wafers of extremely high quality, making it an appealing option for high-performance hybrid pixel X-ray detectors, but suitable technologies for finely pixelating and bump-bonding germanium have not previously been available. A finely-pixelated germanium photodiode sensor with a 256 by 256 array of 55μm pixels has been produced. The sensor has an n-on-p structure, with 700μm thickness. Using a low-temperature indium bump process, this sensor has been bonded to the Medipix3RX photoncounting readout chip. Tests with the LAMBDA readout system have shown that the detector works successfully, with a high bond yield and higher image uniformity than comparable high-Z systems. During cooling, the system is functional around -80°C (with warmer temperatures resulting in excessive leakage current), with -100°C sufficient for good performance.

  10. Astroparticle Physics with a Customized Low-Background Broad Energy Germanium Detector

    Aalseth, C E; Avignone, F T; Back, H O; Barabash, A S; Barbeau, P S; Bergevin, M; Bertrand, F E; Boswell, M; Brudanin, V; Bugg, W; Burritt, T H; Busch, M; Capps, G; Chan, Y-D; Collar, J I; Cooper, R J; Creswick, R; Detwiler, J A; Diaz, J; Doe, P J; Efremenko, Yu; Egorov, V; Ejiri, H; Elliott, S R; Ely, J; Esterline, J; Farach, H; Fast, J E; Fields, N; Finnerty, P; Fujikawa, B; Fuller, E; Gehman, V M; Giovanetti, G K; Guiseppe, V E; Gusey, K; Hallin, A L; Harper, G C; Hazama, R; Henning, R; Hime, A; Hoppe, E W; Hossbach, T W; Howe, M A; Johnson, R A; Keeter, K J; Keillor, M; Keller, C; Kephart, J D; Kidd, M F; Knecht, A; Kochetov, O; Konovalov, S I; Kouzes, R T; Leviner, L; Loach, J C; Luke, P N; MacMullin, S; Marino, M G; Martin, R D; Mei, D -M; Miley, H S; Miller, M L; Mizouni, L; Meyers, A W; Nomachi, M; Orrell, J L; Peterson, D; Phillips, D G; Poon, A W P; Prior, G; Qian, J; Radford, D C; Rielage, K; Robertson, R G H; Rodriguez, L; Rykaczewski, K P; Salazar, H; Schubert, A G; Shima, T; Shirchenko, M; Steele, D; Strain, J; Swift, G; Thomas, K; Timkin, V; Tornow, W; Van Wechel, T D; Vanyushin, I; Varner, R L; Vetter, K; Wilkerson, J F; Wolfe, B A; Xiang, W; Yakushev, E; Yaver, H; Young, A R; Yu, C -H; Yumatov, V; Zhang, C; Zimmerman, S

    2010-01-01

    The MAJORANA Collaboration is building the MAJORANA DEMONSTRATOR, a 60 kg array of high purity germanium detectors housed in an ultra-low background shield at the Sanford Underground Laboratory in Lead, SD. The MAJORANA DEMONSTRATOR will search for neutrinoless double-beta decay of 76Ge while demonstrating the feasibility of a tonne-scale experiment. It may also carry out a dark matter search in the 1-10 GeV/c^2 mass range. We have found that customized Broad Energy Germanium (BEGe) detectors produced by Canberra have several desirable features for a neutrinoless double-beta decay experiment, including low electronic noise, excellent pulse shape analysis capabilities, and simple fabrication. We have deployed a customized BEGe, the MAJORANA Low-Background BEGe at Kimballton (MALBEK), in a low-background cryostat and shield at the Kimballton Underground Research Facility in Virginia. This paper will focus on the detector characteristics and measurements that can be performed with such a radiation detector in a ...

  11. Astroparticle physics with a customized low-background broad energy Germanium detector

    Aalseth, Craig E.; Amman, M.; Avignone, Frank T.; Back, Henning O.; Barabash, Alexander S.; Barbeau, P. S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Bugg, William; Burritt, Tom H.; Busch, Matthew; Capps, Greg L.; Chan, Yuen-Dat; Collar, J. I.; Cooper, R. J.; Creswick, R.; Detwiler, Jason A.; Diaz, J.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, Steven R.; Ely, James H.; Esterline, James H.; Farach, H. A.; Fast, James E.; Fields, N.; Finnerty, P.; Fujikawa, Brian; Fuller, Erin S.; Gehman, Victor M.; Giovanetti, G. K.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Harper, Gregory; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Hossbach, Todd W.; Howe, M. A.; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, Mary; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; Leviner, L.; Loach, J. C.; Luke, P.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Miley, Harry S.; Miller, M. L.; Mizouni, Leila; Myers, Allan W.; Nomachi, Masaharu; Orrell, John L.; Peterson, David; Phillips, D.; Poon, Alan; Prior, Gersende; Qian, J.; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Rodriguez, Larry; Rykaczewski, Krzysztof P.; Salazar, Harold; Schubert, Alexis G.; Shima, T.; Shirchenko, M.; Steele, David; Strain, J.; Swift, Gary; Thomas, K.; Timkin, V.; Tornow, W.; Van Wechel, T. D.; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Wilkerson, J. F.; Wolfe, B. A.; Xiang, W.; Yakushev, E.; Yaver, Harold; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C.; Zimmerman, S.

    2011-10-01

    The Majorana Collaboration is building the Majorana Demonstrator, a 60 kg array of high purity germanium detectors housed in an ultra-low background shield at the Sanford Underground Laboratory in Lead, SD. The Majorana Demonstrator will search for neutrinoless double-beta decay of 76Ge while demonstrating the feasibility of a tonne-scale experiment. It may also carry out a dark matter search in the 1-10 GeV/c² mass range. We have found that customized Broad Energy Germanium (BEGe) detectors produced by Canberra have several desirable features for a neutrinoless double-beta decay experiment, including low electronic noise, excellent pulse shape analysis capabilities, and simple fabrication. We have deployed a customized BEGe, the Majorana Low-Background BEGe at Kimballton (MALBEK), in a low-background cryostat and shield at the Kimballton Underground Research Facility in Virginia. This paper will focus on the detector characteristics and measurements that can be performed with such a radiation detector in a low-background environment.

  12. Germanium separation and purification by leaching and precipitation

    Saeid Bayat; Sajjad Aghazadeh; Mohammad Noaparast; Mahdi Gharabaghi; Behrooz Taheri

    2016-01-01

    In this research work, extraction and purification of germanium from zinc leach residues (ZLR) were investigated. The results of ICP, XRF, and atomic adsorption spectroscopy (AAS) tests show that contents of germanium, iron, lead, and zinc within the leaching residue were 105×10−6, 3.53%, 10.35%, and 8.8%, respectively. XRD results indicate that the main minerals were in different forms of sulfates (CaSO4·2H2O, PbSO4 and ZnSO4·6H2O), silicate (SiO2), and oxide (Fe2O3). Dissolution of leaching filter cake was carried out using 5 parameters and each in 4 levels (acid concentration, temperature, time, liquid-to-solid ratio, and stirring speed) by Taguchi method (L16), and then optimization of the effective parameters by response surface method. Under optimum conditions, zinc and germanium dissolution efficiencies were 88.71% and 8%, respectively. Leaching tests with sulfuric acid (added di-ammonium oxalate monohydrate) and hydrochloric acid (HCl) on the residues obtained from previous-stage sulfuric acid dissolution, yielded germanium and iron recoveries of 83%, 88%, 40%, and 90%, respectively. Thus, leaching experiment with sulfuric acid (added di-ammonium oxalate monohydrate) was superior to that with hydrochloric acid due to high and low extraction amounts of germanium and iron, respectively. Precipitation experiments revealed that germanium purification with tannic acid presented a better result compared to sodium hydroxide and ammonia. Under optimum conditions, contents of germanium and iron in the solution after precipitation were 0.1505% and 14.7% with precipitation yields of 91% and 52%, respectively.

  13. Hydrogen Bonding in Hydrogenated Amorphous Germanium

    M.S.Abo-Ghazala; S. Al Hazmy

    2004-01-01

    Thin films of hydrogenated amorphous germanium (a-Ge:H) were prepared by radio frequency glow discharge deposition at various substrate temperatures. The hydrogen distribution and bonding structure in a-Ge:H were discussed based on infrared absorption data. The correlation between infrared absorption spectra and hydrogen effusion measurements was used to determine the proportionality constant for each vibration mode of the Ge-H bonds. The results reveal that the bending mode appearing at 835 cm?1 is associated with the Ge-H2 (dihydride) groups on the internal surfaces of voids. While 1880 cm?1 is assigned to vibrations of Ge-H (monohydride) groups in the bulk, the 2000 cm?1 stretching mode is attributed to Ge-H and Ge-H2 bonds located on the surfaces of voids. For films associated with bending modes in the infrared spectra, the proportionality constant values of the stretching modes near 1880 and 2000 cm?1 are found to be lower than those of films which had no corresponding bending modes.

  14. Anisotropic Optical Properties of Layered Germanium Sulfide

    Tan, Dezhi; Wang, Feijiu; Mohamed, Nur Baizura; Mouri, Shinichiro; Sandhaya, Koirala; Zhang, Wenjing; Miyauchi, Yuhei; Ohfuchi, Mari; Matsuda, Kazunari

    2016-01-01

    Two-dimensional (2D) layered materials, transition metal dichalcogenides and black phosphorus, have attracted much interest from the viewpoints of fundamental physics and device applications. The establishment of new functionalities in anisotropic layered 2D materials is a challenging but rewarding frontier, owing to their remarkable optical properties and prospects for new devices. Here, we report the anisotropic optical properties of layered 2D monochalcogenide of germanium sulfide (GeS). Three Raman scattering peaks corresponding to the B3g, A1g, and A2g modes with strong polarization dependence are demonstrated in the GeS flakes, which validates polarized Raman spectroscopy as an effective method for identifying the crystal orientation of anisotropic layered GeS. Photoluminescence (PL) is observed with a peak at around 1.66 eV that originates from the direct optical transition in GeS at room temperature. Moreover, determination of the polarization dependent characteristics of the PL and absorption reveals...

  15. Reaction studies of hot silicon, germanium and carbon atoms

    Gaspar, P.P.

    1990-11-01

    The goal of this project was to increase the authors understanding of the interplay between the kinetic and electronic energy of free atoms and their chemical reactivity by answering the following questions: (1) what is the chemistry of high-energy carbon silicon and germanium atoms recoiling from nuclear transformations; (2) how do the reactions of recoiling carbon, silicon and germanium atoms take place - what are the operative reaction mechanisms; (3) how does the reactivity of free carbon, silicon and germanium atoms vary with energy and electronic state, and what are the differences in the chemistry of these three isoelectronic atoms This research program consisted of a coordinated set of experiments capable of achieving these goals by defining the structures, the kinetic and internal energy, and the charge states of the intermediates formed in the gas-phase reactions of recoiling silicon and germanium atoms with silane, germane, and unsaturated organic molecules, and of recoiling carbon atoms with aromatic molecules. The reactions of high energy silicon, germanium, and carbon atoms created by nuclear recoil were studied with substrates chosen so that their products illuminated the mechanism of the recoil reactions. Information about the energy and electronic state of the recoiling atoms at reaction was obtained from the variation in end product yields and the extent of decomposition and rearrangement of primary products (usually reactive intermediates) as a function of total pressure and the concentration of inert moderator molecules that remove kinetic energy from the recoiling atoms and can induce transitions between electronic spin states. 29 refs.

  16. Germanium, Arsenic, and Selenium Abundances in Metal-Poor Stars

    Roederer, Ian U

    2012-01-01

    The elements germanium (Ge, Z=32), arsenic (As, Z=33), and selenium (Se, Z=34) span the transition from charged-particle or explosive synthesis of the iron-group elements to neutron-capture synthesis of heavier elements. Among these three elements, only the chemical evolution of germanium has been studied previously. Here we use archive observations made with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope and observations from several ground-based facilities to study the chemical enrichment histories of seven stars with metallicities -2.6 < [Fe/H] < -0.4. We perform a standard abundance analysis of germanium, arsenic, selenium, and several other elements produced by neutron-capture reactions. When combined with previous derivations of germanium abundances in metal-poor stars, our sample reveals an increase in the [Ge/Fe] ratios at higher metallicities. This could mark the onset of the weak s-process contribution to germanium. In contrast, the [As/Fe] and [Se/Fe] ratios rema...

  17. Demonstration of Surface Electron Rejection with Interleaved Germanium Detectors for Dark Matter Searches

    Agnese, R.; Anderson, A. J.; Balakishiyeva, D.; Basu Thakur, R.; Bauer, D. A.; Borgland, A.; Brandt, D.; Brink, P. L.; Bunker, R.; Cabrera, B.; Caldwell, D. O.; Cerdeno, D. G.; Chagani, H.; Cherry, M.; Cooley, J.; Cornell, B.; Crewdson, C. H.; Cushman, Priscilla B.; Daal, M.; Di Stefano, P. C.; Do Couto E Silva, E.; Doughty, T.; Esteban, L.; Fallows, S.; Figueroa-Feliciano, E.; Fox, J.; Fritts, M.; Godfrey, G. L.; Golwala, S. R.; Hall, Jeter C.; Harris, H. R.; Hasi, J.; Hertel, S. A.; Hines, B. A.; Hofer, T.; Holmgren, D.; Hsu, L.; Huber, M. E.; Jastram, A.; Kamaev, O.; Kara, B.; Kelsey, M. H.; Kenany, S.; Kennedy, A.; Kenney, C. J.; Kiveni, M.; Koch, K.; Loer, B.; Lopez Asamar, E.; Mahapatra, R.; Mandic, V.; Martinez, C.; McCarthy, K. A.; Mirabolfathi, N.; Moffatt, R. A.; Moore, D. C.; Nadeau, P.; Nelson, R. H.; Novak, L.; Page, K.; Partridge, R.; Pepin, M.; Phipps, A.; Prasad, K.; Pyle, M.; Qiu, H.; Radpour, R.; Rau, W.; Redl, P.; Reisetter, A.; Resch, R. W.; Ricci, Y.; Saab, T.; Sadoulet, B.; Sander, J.; Schmitt, R.; Schneck, K.; Schnee, Richard; Scorza, S.; Seitz, D.; Serfass, B.; Shank, B.; Speller, D.; Tomada, A.; Villano, A. N.; Welliver, B.; Wright, D. H.; Yellin, S.; Yen, J. J.; Young, B. A.; Zhang, J.

    2013-10-17

    The SuperCDMS experiment in the Soudan Underground Laboratory searches for dark matter with a 9-kg array of cryogenic germanium detectors. Symmetric sensors on opposite sides measure both charge and phonons from each particle interaction, providing excellent discrimination between electron and nuclear recoils, and between surface and interior events. Furthermore, surface event rejection capabilities were tested with two 210Pb sources producing ~130 beta decays/hr. We found that in ~800 live hours, no events leaked into the 8–115 keV signal region, giving upper limit leakage fraction 1.7 x 10-5 at 90% C.L., corresponding to<0.6 surface event background in the future 200-kg SuperCDMS SNOLAB experiment.

  18. Prospects of cold dark matter searches with an ultra-low-energy germanium detector

    Wong, H T

    2007-01-01

    The report describes the research program on the development of ultra-low-energy germanium detectors, with emphasis on WIMP dark matter searches. A threshold of 100 eV is achieved with a 20 g detector array, providing a unique probe to the low-mas WIMP. Present data at a surface laboratory is expected to give rise to comparable sensitivities with the existing limits at the $\\rm{5 - 10 GeV}$ WIMP-mass range. The projected parameter space to be probed with a full-scale, kilogram mass-range experiment is presented. Such a detector would also allow the studies of neutrino-nucleus coherent scattering and neutrino magnetic moments.

  19. Demonstration of surface electron rejection with interleaved germanium detectors for dark matter searches

    Agnese, R.; Balakishiyeva, D.; Saab, T.; Welliver, B. [Department of Physics, University of Florida, Gainesville, Florida 32611 (United States); Anderson, A. J.; Figueroa-Feliciano, E.; Hertel, S. A.; McCarthy, K. A. [Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Basu Thakur, R. [Fermi National Accelerator Laboratory, Batavia, Illinois 60510 (United States); Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illnois 61801 (United States); Bauer, D. A.; Holmgren, D.; Hsu, L.; Loer, B.; Schmitt, R. [Fermi National Accelerator Laboratory, Batavia, Illinois 60510 (United States); Borgland, A.; Brandt, D.; Brink, P. L.; Do Couto E Silva, E.; Godfrey, G. L.; Hasi, J. [SLAC National Accelerator Laboratory/Kavli Institute for Particle Astrophysics and Cosmology, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Collaboration: The SuperCDMS Collaboration; and others

    2013-10-14

    The SuperCDMS experiment in the Soudan Underground Laboratory searches for dark matter with a 9-kg array of cryogenic germanium detectors. Symmetric sensors on opposite sides measure both charge and phonons from each particle interaction, providing excellent discrimination between electron and nuclear recoils, and between surface and interior events. Surface event rejection capabilities were tested with two {sup 210}Pb sources producing ∼130 beta decays/hr. In ∼800 live hours, no events leaked into the 8–115 keV signal region, giving upper limit leakage fraction 1.7 × 10{sup −5} at 90% C.L., corresponding to < 0.6 surface event background in the future 200-kg SuperCDMS SNOLAB experiment.

  20. Graphene-like monolayer low-buckled honeycomb germanium film

    He, Yezeng; Luo, Haibo; Li, Hui; Sui, Yanwei; Wei, Fuxiang; Meng, Qingkun; Yang, Weiming; Qi, Jiqiu

    2017-04-01

    Molecular dynamics simulations have been performed to study the cooling process of two-dimensional liquid germanium under nanoslit confinement. The results clearly indicates that the liquid germanium undergoes an obvious liquid-solid phase transition to a monolayer honeycomb film with the decrease of temperature, accompanying the rapid change in potential energy, atomic volume, coordination number and lateral radial distribution function. During the solidification process, some hexagonal atomic islands first randomly emerge in the disordered liquid film and then grow up to stable crystal grains which keep growing and finally connect together to form a honeycomb polycrystalline film. It is worth noting that the honeycomb germanium film is low-buckled, quite different from the planar graphene.

  1. Next Generation Device Grade Silicon-Germanium on Insulator

    Littlejohns, Callum G.; Nedeljkovic, Milos; Mallinson, Christopher F.; Watts, John F.; Mashanovich, Goran Z.; Reed, Graham T.; Gardes, Frederic Y.

    2015-02-01

    High quality single crystal silicon-germanium-on-insulator has the potential to facilitate the next generation of photonic and electronic devices. Using a rapid melt growth technique we engineer tailored single crystal silicon-germanium-on-insulator structures with near constant composition over large areas. The proposed structures avoid the problem of laterally graded SiGe compositions, caused by preferential Si rich solid formation, encountered in straight SiGe wires by providing radiating elements distributed along the structures. This method enables the fabrication of multiple single crystal silicon-germanium-on-insulator layers of different compositions, on the same Si wafer, using only a single deposition process and a single anneal process, simply by modifying the structural design and/or the anneal temperature. This facilitates a host of device designs, within a relatively simple growth environment, as compared to the complexities of other methods, and also offers flexibility in device designs within that growth environment.

  2. Characterisation of a Broad Energy Germanium (BEGe) detector

    Barrientos, D., E-mail: diego_barrientos@usal.es [Laboratorio de Radiaciones Ionizantes, University of Salamanca (Spain); Boston, A.J.; Boston, H.C. [Nuclear Physics Group, University of Liverpool (United Kingdom); Quintana, B.; Sagrado, I.C. [Laboratorio de Radiaciones Ionizantes, University of Salamanca (Spain); Unsworth, C.; Moon, S.; Cresswell, J.R. [Nuclear Physics Group, University of Liverpool (United Kingdom)

    2011-08-21

    Characterisation of Germanium detectors used for gamma-ray tracking or medical imaging is one of the current goals in the Nuclear physics community. Good knowledge of detector response to different gamma radiations is needed for this purpose. In order to develop this task, Pulse Shape Analysis (PSA) techniques have been developed for different detector geometries or setups. In this work, we present the results of the application of PSA for a Canberra Broad Energy Germanium (BEGe) detector. This detector was scanned across its front and bottom face using a fully digital data acquisition system; allowing to record detector charge pulse shapes from well defined positions with collimated sources of {sup 241}Am, {sup 22}Na and {sup 137}Cs. With the study of the data acquired, characteristics of the inner detector geometry like crystal limits or positions of contact and isolate can be found, as well as the direction of the axes for the Germanium crystal.

  3. Germanium, Arsenic, and Selenium Abundances in Metal-poor Stars

    Roederer, Ian U.

    2012-09-01

    The elements germanium (Ge, Z = 32), arsenic (As, Z = 33), and selenium (Se, Z = 34) span the transition from charged-particle or explosive synthesis of the iron-group elements to neutron-capture synthesis of heavier elements. Among these three elements, only the chemical evolution of germanium has been studied previously. Here we use archive observations made with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope and observations from several ground-based facilities to study the chemical enrichment histories of seven stars with metallicities -2.6 Prochaska).This paper includes data taken at The McDonald Observatory of The University of Texas at Austin.

  4. Comparative infrared study of silicon and germanium nitrides

    Baraton, M. I.; Marchand, R.; Quintard, P.

    1986-03-01

    Silicon and germanium nitride (Si 3N 4 and Ge 3N 4) are isomorphic compounds. They have been studied in the β-phase which crystallises in the hexagonal system. The space group is P6 3/m (C 6h2). The IR transmission spectra of these two nitrides are very similar but the absorption frequencies of germanium nitride are shifted to the lower values in comparison with silicon nitride. We noted that the atomic mass effect is the only cause of this shift for the streching modes but not for the bending modes.

  5. Tensile-strained germanium microdisks with circular Bragg reflectors

    El Kurdi, M.; Prost, M.; Ghrib, A.; Elbaz, A.; Sauvage, S.; Checoury, X.; Beaudoin, G.; Sagnes, I.; Picardi, G.; Ossikovski, R.; Boeuf, F.; Boucaud, P.

    2016-02-01

    We demonstrate the combination of germanium microdisks tensily strained by silicon nitride layers and circular Bragg reflectors. The microdisks with suspended lateral Bragg reflectors form a cavity with quality factors up to 2000 around 2 μm. This represents a key feature to achieve a microlaser with a quasi-direct band gap germanium under a 1.6% biaxial tensile strain. We show that lowering the temperature significantly improves the quality factor of the quasi-radial modes. Linewidth narrowing is observed in a range of weak continuous wave excitation powers. We finally discuss the requirements to achieve lasing with these kind of structures.

  6. Novel approach for n-type doping of HVPE gallium nitride with germanium

    Hofmann, Patrick; Krupinski, Martin; Habel, Frank; Leibiger, Gunnar; Weinert, Berndt; Eichler, Stefan; Mikolajick, Thomas

    2016-09-01

    We present a novel method for germanium doping of gallium nitride by in-situ chlorination of solid germanium during the hydride vapour phase epitaxy (HVPE) process. Solid germanium pieces were placed in the doping line with a hydrogen chloride flow directed over them. We deduce a chlorination reaction taking place at 800 ° C , which leads to germanium chloroform (GeHCl3) or germanium tetrachloride (GeCl4). The reactor shows a germanium rich residue after in-situ chlorination experiments, which can be removed by hydrogen chloride etching. All gallium nitride crystals exhibit n-type conductivity, which shows the validity of the in-situ chlorination of germanium for doping. A complex doping profile is found for each crystal, which was assigned to a combination of localised supply of the dopant and sample rotation during growth and switch-off effects of the HVPE reactor.

  7. Active noise canceling system for mechanically cooled germanium radiation detectors

    Nelson, Karl Einar; Burks, Morgan T

    2014-04-22

    A microphonics noise cancellation system and method for improving the energy resolution for mechanically cooled high-purity Germanium (HPGe) detector systems. A classical adaptive noise canceling digital processing system using an adaptive predictor is used in an MCA to attenuate the microphonics noise source making the system more deployable.

  8. Direct observations of the vacancy and its annealing in germanium

    Slotte, J.; Kilpeläinen, S.; Tuomisto, F.

    2011-01-01

    Weakly n-type doped germanium has been irradiated with protons up to a fluence of 3×1014 cm-2 at 35 K and 100 K in a unique experimental setup. Positron annihilation measurements show a defect lifetime component of 272±4 ps at 35 K in in situ positron lifetime measurements after irradiation at 100...

  9. Noise and oscillations in gold-doped germanium photodiodes

    Bolwijn, P.T.; Rijst, C. v. d.; Ast, W.G. van; Lam, T.

    1967-01-01

    Considerable noise effects in excess of shot noise and oscillations found in commercially available, gold-doped germanium photodiodes have been investigated. The noise and oscillation effects occur in the photocurrent of reversely biased diodes at temperatures below about 100°K. The dependence of th

  10. Composite germanium monochromators - results for the TriCS

    Schefer, J.; Fischer, S.; Boehm, M.; Keller, L.; Horisberger, M.; Medarde, M.; Fischer, P. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-09-01

    Composite germanium monochromators are in the beginning of their application in neutron diffraction. We show here the importance of the permanent quality control with neutrons on the example of the 311 wafers which will be used on the single crystal diffractometer TriCS at SINQ. (author) 2 figs., 3 refs.

  11. In-Situ Cleaning, Passivation, Functionalization, and Atomic Layer Deposition on Germanium and Silicon-Germanium

    Kaufman-Osborn, Tobin Adar

    In recent years, germanium (Ge) and silicon-germanium (SiGe) have drawn significant interest as replacements of conventional silicon in the search for alternative materials for use in complementary metal-oxide-semiconductor (CMOS) devices due to their high electron and hole mobilities. In order to effectively implement Ge or SiGe as a replacement for silicon, two major challenges must be overcome: non-disruptive cleaning and surface passivation/functionalization. As electrical devices are increasingly scaled, it becomes especially crucial to effectively clean each unit cell on the Ge/SiGe surface without causing major disruption or damage to the surface. If air-induced defects or contaminants persist on the surface after cleaning, these defect sites may be un-reactive for functionalization and thereby will hinder device performance and/or the ability to aggressively scale device size. If a cleaning method is too aggressive leaving a rough or disordered surface, this can lower the mobility at the interface which will worsen device performance. For these reasons, it is necessary to develop a non-disruptive cleaning process that cleans each unit cell leaving a flat, ordered, and reactive surface. Once the Ge or SiGe surface is cleaned, in order to achieve a good electrical quality interface and a high nucleation density on the surface, all surface atoms must be passivated and functionalized allowing for aggressive device scaling. The interface must remain electrically passive in order to not inhibit electrical performance of the device. This study uses scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and x-ray photoelectron spectroscopy (XPS) to develop and analyze a completely in-situ non-disruptive cleaning method of the Ge surface using H2O2(g) and atomic hydrogen. After cleaning, the Ge or SiGe surface is passivated and functionalized using H2O2(g) as a method to improve upon the conventional H2O(g) passivation method by more than

  12. AGATA - Advanced GAmma Tracking Array

    Akkoyun, S. [Department of Physics, Faculty of Science, Ankara University, 06100 Tandogan, Ankara (Turkey); Algora, A. [IFIC, CSIC-Universitat de Valencia, E-46980 Paterna (Spain); Alikhani, B. [IKP, TU Darmstadt, Schlossgartenstrasse 9, D-64289 Darmstadt (Germany); Ameil, F. [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, D-64291 Darmstadt (Germany); Angelis, G. de [INFN Laboratori Nazionali di Legnaro, IT-35020 Padova (Italy); Arnold, L. [Universite de Strasbourg, IPHC, 23 rue du Loess, 67037 Strasbourg (France); CNRS, UMR 7178, 67037 Strasbourg (France); Astier, A. [CSNSM, CNRS, IN2P3, Universite Paris-Sud, F-91405 Orsay (France); Atac, A. [Department of Physics, Faculty of Science, Ankara University, 06100 Tandogan, Ankara (Turkey); Department of Physics and Astronomy, Uppsala University, Uppsala (Sweden); Royal Institute of Technology, SE-10691 Stockholm (Sweden); Aubert, Y. [IPNO, CNRS/IN2P3, Universite Paris-Sud, F-91406 Orsay (France); Aufranc, C. [Universite de Lyon, Universite Lyon 1, CNRS-IN2P3, Institut de Physique Nucleaire de Lyon, F-69622 Villeurbanne (France); Austin, A. [STFC Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Aydin, S. [INFN Sezione di Padova, IT-35131 Padova (Italy); Azaiez, F. [IPNO, CNRS/IN2P3, Universite Paris-Sud, F-91406 Orsay (France); Badoer, S. [INFN Laboratori Nazionali di Legnaro, IT-35020 Padova (Italy); Balabanski, D.L. [Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, Sofia (Bulgaria); Barrientos, D. [IFIC, CSIC-Universitat de Valencia, E-46980 Paterna (Spain); and others

    2012-03-11

    The Advanced GAmma Tracking Array (AGATA) is a European project to develop and operate the next generation {gamma}-ray spectrometer. AGATA is based on the technique of {gamma}-ray energy tracking in electrically segmented high-purity germanium crystals. This technique requires the accurate determination of the energy, time and position of every interaction as a {gamma} ray deposits its energy within the detector volume. Reconstruction of the full interaction path results in a detector with very high efficiency and excellent spectral response. The realisation of {gamma}-ray tracking and AGATA is a result of many technical advances. These include the development of encapsulated highly segmented germanium detectors assembled in a triple cluster detector cryostat, an electronics system with fast digital sampling and a data acquisition system to process the data at a high rate. The full characterisation of the crystals was measured and compared with detector-response simulations. This enabled pulse-shape analysis algorithms, to extract energy, time and position, to be employed. In addition, tracking algorithms for event reconstruction were developed. The first phase of AGATA is now complete and operational in its first physics campaign. In the future AGATA will be moved between laboratories in Europe and operated in a series of campaigns to take advantage of the different beams and facilities available to maximise its science output. The paper reviews all the achievements made in the AGATA project including all the necessary infrastructure to operate and support the spectrometer.

  13. Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents.

    Kim, Jiwoong; Jang, Kyungsoo; Phu, Nguyen Thi Cam; Trinh, Thanh Thuy; Raja, Jayapal; Kim, Taeyong; Cho, Jaehyun; Kim, Sangho; Park, Jinjoo; Jung, Junhee; Lee, Youn-Jung; Yi, Junsin

    2016-05-01

    Nonvolatile memory (NVM) with silicon dioxide/silicon nitride/silicon oxynitride (ONO(n)) charge trap structure is a promising flash memory technology duo that will fulfill process compatibility for system-on-panel displays, down-scaling cell size and low operation voltage. In this research, charge trap flash devices were fabricated with ONO(n) stack gate insulators and an active layer using hydrogenated nanocrystalline silicon germanium (nc-SiGe:H) films at a low temperature. In this study, the effect of the interface trap density on the performance of devices, including memory window and retention, was investigated. The electrical characteristics of NVM devices were studied controlling Ge content from 0% to 28% in the nc-SiGe:H channel layer. The optimal Ge content in the channel layer was found to be around 16%. For nc-SiGe:H NVM with 16% Ge content, the memory window was 3.13 V and the retention data exceeded 77% after 10 years under the programming condition of 15 V for 1 msec. This showed that the memory window increased by 42% and the retention increased by 12% compared to the nc-Si:H NVM that does not contain Ge. However, when the Ge content was more than 16%, the memory window and retention property decreased. Finally, this research showed that the Ge content has an effect on the interface trap density and this enabled us to determine the optimal Ge content.

  14. Synthesis and Gas Phase Thermochemistry of Germanium-Containing Compounds

    Classen, Nathan Robert [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    The driving force behind much of the work in this dissertation was to gain further understanding of the unique olefin to carbene isomerization observed in the thermolysis of 1,1-dimethyl-2-methylenesilacyclobutane by finding new examples of it in other silicon and germanium compounds. This lead to the examination of a novel phenylmethylenesilacyclobut-2-ene, which did not undergo olefin to carbene rearrangement. A synthetic route to methylenegermacyclobutanes was developed, but the methylenegermacyclobutane system exhibited kinetic instability, making the study of the system difficult. In any case the germanium system decomposed through a complex mechanism which may not include olefin to carbene isomerization. However, this work lead to the study of the gas phase thermochemistry of a series of dialkylgermylene precursors in order to better understand the mechanism of the thermal decomposition of dialkylgermylenes. The resulting dialkylgermylenes were found to undergo a reversible intramolecular β C-H insertion mechanism.

  15. Long-term radiation damage to a spaceborne germanium spectrometer

    Kurczynski, P; Hull, E L; Palmer, D; Harris, M J; Seifert, H; Teegarden, B J; Gehrels, N; Cline, T L; Ramaty, R; Sheppard, D; Madden, N W; Luke, P N; Cork, C P; Landis, D A; Malone, D F; Hurley, K

    1999-01-01

    The Transient Gamma-Ray Spectrometer aboard the Wind spacecraft in deep space has observed gamma-ray bursts and solar events for four years. The germanium detector in the instrument has gradually deteriorated from exposure to the approx 10 sup 8 p/cm sup 2 /yr(>100 MeV) cosmic-ray flux. Low-energy tailing and loss of efficiency, attributed to hole trapping and conversion of the germanium from n- to p-type as a result of crystal damage, were observed. Raising the detector bias voltage ameliorated both difficulties and restored the spectrometer to working operation. Together, these observations extend our understanding of the effects of radiation damage to include the previously unsuccessfully studied regime of long-term operation in space. (author)

  16. Diffusion of n-type dopants in germanium

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Engineering and Innovation, The Open University, Milton Keynes MK7 6AA (United Kingdom); Department of Materials, Imperial College, London SW7 2AZ (United Kingdom); Bracht, H., E-mail: bracht@uni-muenster.de [Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster (Germany)

    2014-03-15

    Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation.

  17. Synthesis and Gas Phase Thermochemistry of Germanium-Containing Compounds

    Nathan Robert Classen

    2002-12-31

    The driving force behind much of the work in this dissertation was to gain further understanding of the unique olefin to carbene isomerization observed in the thermolysis of 1,1-dimethyl-2-methylenesilacyclobutane by finding new examples of it in other silicon and germanium compounds. This lead to the examination of a novel phenylmethylenesilacyclobut-2-ene, which did not undergo olefin to carbene rearrangement. A synthetic route to methylenegermacyclobutanes was developed, but the methylenegermacyclobutane system exhibited kinetic instability, making the study of the system difficult. In any case the germanium system decomposed through a complex mechanism which may not include olefin to carbene isomerization. However, this work lead to the study of the gas phase thermochemistry of a series of dialkylgermylene precursors in order to better understand the mechanism of the thermal decomposition of dialkylgermylenes. The resulting dialkylgermylenes were found to undergo a reversible intramolecular {beta} C-H insertion mechanism.

  18. Electronic Structure of Germanium Nanocrystal Films Probed with Synchrotron Radiation

    Bostedt, C

    2002-05-01

    The fundamental structure--property relationship of semiconductor quantum dots has been investigated. For deposited germanium nanocrystals strong quantum confinement effects have been determined with synchrotron radiation based x-ray absorption and photoemission techniques. The nanocrystals are condensed out of the gas phase with a narrow size distribution and subsequently deposited in situ onto various substrates. The particles are crystalline in the cubic phase with a structurally disordered surface shell and the resulting film morphology depends strongly on the substrate material and condition. The disordered surface region has an impact on the overall electronic structure of the particles. In a size-dependent study, the conduction and valence band edge of germanium nanocrystals have been measured for the first time and compared to the bulk crystal. The band edges move to higher energies as the particle size is decreased, consistent with quantum confinement theory. To obtain a more accurate analysis of confinement effects in the empty states, a novel analysis method utilizing an effective particle size for the x-ray absorption experiment, which allows a deconvolution of absorption edge broadening effects, has been introduced. Comparison of the present study to earlier studies on silicon reveals that germanium exhibits stronger quantum confinement effects than silicon. Below a critical particle size of 2.3 {+-} 0.7 nm, the band gap of germanium becomes larger than that of silicon--even if it is the opposite for bulk materials. This result agrees phenomenologically with effective mass and tight binding theories but contradicts the findings of recent pseudopotential calculations. The discrepancy between theory and experiments is attributed to the differences in the theoretical models and experimental systems. The experimentally observed structural disorder of the particle surface has to be included in the theoretical models.

  19. Strain-induced changes to the electronic structure of germanium

    Tahini, H. A.

    2012-04-17

    Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.

  20. Massive silicon or germanium detectors at cryogenic temperature

    Braggio, C. [Dip. Fisica dell' Universita di Ferrara and INFN, via del Paradiso 12, 44100 Ferrara (Italy); Bressi, G. [INFN, sez.Pavia, Via U. Bassi 6, 27100 Pavia (Italy); Carugno, G. [INFN, sez. Padova, Via Marzolo 8, 35131 Padova (Italy); Feltrin, E. [INFN, Lab. Naz. Legnaro, Via dell' Universita 1, 35020 Legnaro (PD) (Italy)]. E-mail: feltrin@lnl.infn.it; Galeazzi, G. [INFN, Lab. Naz. Legnaro, Via dell' Universita 1, 35020 Legnaro (PD) (Italy)

    2006-11-30

    Several massive silicon and germanium home-made detectors, working at cryogenic temperature, have been studied. They are the benchmarking schemes to check the possibility of realizing a semiconductor time projection chamber that could have various interesting applications in weak interaction problems. Reported here are the first results on investigations of charge collection efficiency and metal-semiconductor contact hardness. The leakage current, total depletion voltage and alpha or gamma spectroscopy are presented.

  1. Optical properties of silicon germanium waveguides at telecommunication wavelengths.

    Hammani, Kamal; Ettabib, Mohamed A; Bogris, Adonis; Kapsalis, Alexandros; Syvridis, Dimitris; Brun, Mickael; Labeye, Pierre; Nicoletti, Sergio; Richardson, David J; Petropoulos, Periklis

    2013-07-15

    We present a systematic experimental study of the linear and nonlinear optical properties of silicon-germanium (SiGe) waveguides, conducted on samples of varying cross-sectional dimensions and Ge concentrations. The evolution of the various optical properties for waveguide widths in the range 0.3 to 2 µm and Ge concentrations varying between 10 and 30% is considered. Finally, we comment on the comparative performance of the waveguides, when they are considered for nonlinear applications at telecommunications wavelengths.

  2. Environmental applications for an intrinsic germanium well detector

    Stegnar, P.; Eldridge, J.S.; Teasley, N.A.; Oakes, T.W.

    1983-01-01

    The overall performance of an intrinsic germanium well detector for /sup 125/I measurements was investigated in a program of environmental surveillance. Concentrations of /sup 125/I and /sup 131/I were determined in thyroids of road-killed deer showing the highest activities of /sup 125/I in the animals from the near vicinity of Oak Ridge National Laboratory. This demonstrates the utility of road-killed deer as a bioindicator for radioiodine around nuclear facilities. 6 refs., 2 figs., 3 tabs.

  3. Diffusion of tin in germanium: A GGA+U approach

    Tahini, H. A.

    2011-10-18

    Density functional theory calculations are used to investigate the formation and diffusion of tin-vacancy pairs (SnV) in germanium(Ge). Depending upon the Fermi energy, SnV pairs can form in neutral, singly negative, or doubly negative charged states. The activation energies of diffusion, also as function of the Fermi energy, are calculated to lie between 2.48-3.65 eV, in agreement with and providing an interpretation of available experimental work.

  4. 胶体模板法制备三维锗光子晶体%THREE-DIMENSIONAL GERMANIUM PHOTONIC CRYSTALS PREPARED BY COLLOIDAL TEMPLATE METHOD

    张良静; 许静; 龙永福; 谢凯

    2006-01-01

    采用胶体模板法并通过简单可控的化学填充工艺制备了三维锗光子晶体:以单分散二氧化硅小球的蛋白石结构为模板,由氯化亚锗与丙烯酸化合制备得到3-三氯锗丙酸(Cl3GeCH2CH2COOH)白色粉末,以三氯锗丙酸的乙醇溶液作为锗源先驱体,低温水解得到β-羧乙基锗倍半氧化物,在600~660℃经H2还原后形成锗,由2%HF化学浸蚀消除模板,对终产物进行X射线衍射分析.结果表明:产物为多晶锗.通过扫描电子显微镜对终产物的形貌进行观察的结果表明:包裹有空气的锗壳球有序阵列已经形成.将先驱体浓度为0.6 mol/L的溶液填入模板空隙后,壳层表面可以获得较为光滑致密的锗壳.%Three-dimensional photonic crystals (PCs) were prepared by colloidal template method through a simple controllable chemical filling technique. The synthetic opal made from monodisperse silica colloidal spheres was used as a template, and a white powder of 3-trichlorogermanium propanoic acid (Cl3 GeCH2 CH2 COOH )was synthesized by combination reaction between germanium( Ⅱ )chloride and crylic acid. The Cl3 GeCH2 CH2 COOH solution in ethanol as the germanium precursor was infiltrated into the opal template voids, which was hydrolyzed to form carboxyethyl germanium sesquioxide and reduced by H2 at600 660℃ to form germanium, and then the template was removed chemically by being etched in 2% HF solution. The X-ray diffraction result shows that the final product is the polycrystalline germanium phase. The surface morphology of the final product observed by scanning electron microscopy (SEM) shows that an ordered array composed of air spheres coated with germanium shells was formed. The SEM photographs of the shell surfaces indicate that a smooth and compact shell can be formed when the concentration of the precursor is 0.6 mol/L.

  5. Search for Pauli exclusion principle violating atomic transitions and electron decay with a p-type point contact germanium detector

    Abgrall, N.; Arnquist, I. J.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Caldwell, A. S.; Chan, Y. -D.; Christofferson, C. D.; Chu, P. -H.; Cuesta, C.; Detwiler, J. A.; Dunagan, C.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Finnerty, P. S.; Galindo-Uribarri, A.; Gilliss, T.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Orrell, J. L.; O’Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Shanks, B.; Shirchenko, M.; Suriano, A. M.; Tedeschi, D.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C. -H.; Yumatov, V.; Zhitnikov, I.

    2016-11-11

    A search for Pauli-exclusion-principle-violating K electron transitions was performed using 89.5 kg-d of data collected with a p-type point contact high-purity germanium detector operated at the Kimballton Underground Research Facility. A lower limit on the transition lifetime of s at 90% C.L. was set by looking for a peak at 10.6 keV resulting from the X-ray and Auger electrons present following the transition. A similar analysis was done to look for the decay of atomic K-shell electrons into neutrinos, resulting in a lower limit of s at 90% C.L. It is estimated that the Majorana Demonstrator, a 44 kg array of p-type point contact detectors that will search for the neutrinoless double-beta decay of Ge, could improve upon these exclusion limits by an order of magnitude after three years of operation.

  6. Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

    Nassar, Joanna M.

    2014-08-01

    Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

  7. Ion-beam induced structure modifications in amorphous germanium; Ionenstrahlinduzierte Strukturmodifikationen in amorphem Germanium

    Steinbach, Tobias

    2012-05-03

    Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy {epsilon}{sub n} deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 {mu}m thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of {epsilon}{sub e}{sup HRF}=(10.5{+-}1.0) kev nm{sup -1} was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation {epsilon}{sub e}{sup S{sub a}}=(12{+-}2) keV nm{sup -1} for the first

  8. HEROICA: an Underground Facility for the Fast Screening of Germanium Detectors

    Andreotti, E; Maneschg, W; Barros, N; Benato, G; Brugnera, R; Costa, F; Falkenstein, R; Guthikonda, K K; Hegai, A; Hemmer, S; Hult, M; Jaenner, K; Kihm, T; Lehnert, B; Liao, H; Lubashevskiy, A; Lutter, G; Marissens, G; Modenese, L; Pandola, L; Reissfelder, M; Sada, C; Salathe, M; Schmitt, C; Schulz, O; Schwingenheuer, B; Turcato, M; Ur, C; von Sturm, K; Wagner, V; Westermann, J

    2013-01-01

    An infrastructure to characterize germanium detectors has been designed and constructed at the HADES Underground Research Laboratory, located in Mol (Belgium). Thanks to the 223m overburden of clay and sand, the muon flux is lowered by four orders of magnitude. This natural shield minimizes the exposure of radio-pure germanium material to cosmic radiation resulting in a significant suppression of cosmogenic activation in the germanium detectors. The project has been strongly motivated by a special production of germanium detectors for the GERDA experiment. GERDA, currently collecting data at the Laboratori Nazionali del Gran Sasso of INFN, is searching for the neutrinoless double beta decay of 76Ge. In the near future, GERDA will increase its mass and sensitivity by adding new Broad Energy Germanium (BEGe) detectors. The production of the BEGe detectors is done at Canberra in Olen (Belgium), located about 30km from the underground test site. Therefore, HADES is used both for storage of the crystals over night...

  9. Femtosecond Laser Processing of Germanium: An Ab Initio Molecular Dynamics Study

    Ji, Pengfei

    2016-01-01

    An ab initio molecular dynamics study of femtosecond laser processing of germanium is presented in this paper. The method based on the finite temperature density functional theory is adopted to probe the structural change, thermal motion of the atoms, dynamic property of the velocity autocorrelation, and the vibrational density of states. Starting from a cubic system at room temperature (300 K) containing 64 germanium atoms with an ordered arrangement of 1.132 nm in each dimension, the femtosecond laser processing is simulated by imposing the Nose Hoover thermostat to the electronic subsystem lasting for ~100 fs and continuing with microcanonical ensemble simulation of ~200 fs. The simulation results show solid, liquid and gas phases of germanium under adjusted intensities of the femtosecond laser irradiation. We find the irradiated germanium distinguishes from the usual germanium crystal by analyzing their melting and dynamic properties.

  10. Suspended germanium cross-shaped microstructures for enhancing biaxial tensile strain

    Ishida, Satomi; Kako, Satoshi; Oda, Katsuya; Ido, Tatemi; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2016-04-01

    We fabricate a suspended germanium cross-shaped microstructure to biaxially enhance residual tensile strain using a germanium epilayer directly grown on a silicon-on-insulator substrate. Such a suspended germanium system with enhanced biaxial tensile strain will be a promising platform for incorporating optical cavities toward the realization of germanium lasers. We demonstrate systematic control over biaxial tensile strain and photoluminescence peaks by changing structural geometry. The photoluminescence peaks corresponding to the direct recombination between the conduction Γ valley and two strain-induced separated valence bands have been clearly assigned. A maximum biaxial strain of 0.8% has been achieved, which is almost half of that required to transform germanium into a direct band-gap semiconductor.

  11. Demonstration of Surface Electron Rejection with Interleaved Germanium Detectors for Dark Matter Search

    Agnese, R; Balakishiyeva, D; Thakur, R Basu; Bauer, D A; Borgland, A; Brandt, D; Brink, P L; Bunker, R; Cabrera, B; Caldwell, D O; Cerdeno, D G; Chagani, H; Cherry, M; Cooley, J; Cornell, B; Crewdson, C H; Cushman, P; Daal, M; Di Stefano, P C F; Silva, E Do Couto E; Doughty, T; Esteban, L; Fallows, S; Figueroa-Feliciano, E; Fox, J; Fritts, M; Godfrey, G L; Golwala, S R; Hall, J; Harris, H R; Hasi, J; Hertel, S A; Hines, B A; Hofer, T; Holmgren, D; Hsu, L; Huber, M E; Jastram, A; Kamaev, O; Kara, B; Kelsey, M H; Kenany, S A; Kennedy, A; Kenney, C J; Kiveni, M; Koch, K; Loer, B; Asamar, E Lopez; Mahapatra, R; Mandic, V; Martinez, C; McCarthy, K A; Mirabolfathi, N; Moffatt, R A; Moore, D C; Nadeau, P; Nelson, R H; Novak, L; Page, K; Partridge, R; Pepin, M; Phipps, A; Prasad, K; Pyle, M; Qiu, H; Radpour, R; Rau, W; Redl, P; Reisetter, A; Resch, R W; Ricci, Y; Saab, T; Sadoulet, B; Sander, J; Schmitt, R; Schneck, K; Schnee, R W; Scorza, S; Seitz, D; Serfass, B; Shank, B; Speller, D; Tomada, A; Villano, A N; Welliver, B; Wright, D H; Yellin, S; Yen, J J; Young, B A; Zhang, J

    2013-01-01

    SuperCDMS, a direct search for WIMPs, is currently operating a 9-kg array of cryogenic germanium (Ge) detectors in the Soudan Underground Laboratory. These detectors, known as iZIPs, use ionization and phonon sensors placed symmetrically on both sides of a Ge crystal to measure both charge and athermal phonons from each particle interaction. The information from each event provides excellent discrimination between electron recoils and nuclear recoils, as well as discrimination between events on the detector surface and those in the interior. To demonstrate the surface electron rejection capabilities, two $^{210}$Pb sources were installed facing detectors, producing $\\sim$130 beta decays/hr. In $\\sim$800 live hours, no events leaked into the WIMP signal region in the recoil energy range 8--115 keVr, providing an upper limit to the surface event leakage fraction of $1.7 \\times 10^{-5}$ at 90% C.L. This rejection factor demonstrates that surface electrons would produce $< 0.6$ event background in the 0.3 ton-...

  12. The MAJORANA DEMONSTRATOR: A Search for Neutrinoless Double-beta Decay of Germanium-76

    Elliott, S R; Aguayo, E; Avignone, F T; Barabash, A S; Bertrand, F E; Boswell, M; Brudanin, V; Busch, M; Caldwell, A S; Chan, Y-D; Christofferson, C D; Combs, D C; Detwiler, J A; Doe, P J; Efremenko, Yu; Egorov, V; Ejiri, H; Esterline, J; Fast, J E; Finnerty, P; Fraenkleo, F M; Galindo-Uribarri, A; Giovanetti, G K; Goett, J; Green, M P; Gruszko, J; Guiseppe, V E; Gusev, K; Hallin, A L; Hazama, R; Hegai, A; Henning, R; Hoppe, E W; Howard, S; Howe, M A; Keeter, K J; Kidd, M F; Kochetov, O; Konovalov, S I; Kouzes, R T; LaFerriere, B D; Leon, J; Leviner, L E; Loach, J C; MacMullin, S; Martin, R D; Mertens, S; Mizouni, L; Nomachi, M; Orrell, J L; OShaughnessy, C; Overman, N R; Phillips, D G; Poon, A W P; Pushkin, K; Radford, D C; Rielage, K; Robertson, R G H; Ronquest, M C; Schubert, A G; Shanks, B; Shima, T; Shirchenko, M; Snavely, K J; Snyder, N; Soin, A; Strain, J; Suriano, A M; Timkin, V; Tornow, W; Varner, R L; Vasilyev, S; Vetter, K; Vorren, K; White, B R; Wilkerson, J F; Xu, W; Yakushev, E; Young, A R; Yu, C -H; Yumatov, V

    2013-01-01

    The {\\sc Majorana} collaboration is searching for neutrinoless double beta decay using $^{76}$Ge, which has been shown to have a number of advantages in terms of sensitivities and backgrounds. The observation of neutrinoless double-beta decay would show that lepton number is violated and that neutrinos are Majorana particles and would simultaneously provide information on neutrino mass. Attaining sensitivities for neutrino masses in the inverted hierarchy region, $15 - 50$ meV, will require large, tonne-scale detectors with extremely low backgrounds, at the level of $\\sim$1 count/t-y or lower in the region of the signal. The {\\sc Majorana} collaboration, with funding support from DOE Office of Nuclear Physics and NSF Particle Astrophysics, is constructing the {\\sc Demonstrator}, an array consisting of 40 kg of p-type point-contact high-purity germanium (HPGe) detectors, of which $\\sim$30 kg will be enriched to 87% in $^{76}$Ge. The {\\sc Demonstrator} is being constructed in a clean room laboratory facility at...

  13. Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Germanium implanttation

    Guo Hui; Wang Yue-Hu; Zhang Yu-Ming; Qiao Da-Yong; Zhang Yi-Men

    2009-01-01

    By formation of an intermediate semiconductor layer(ISL)with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method(TLM)test patterns is formed on N-wells created by P+ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-tyDe 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as loW as 4.23×10~(-5) Ω·cm~2 is achieved after annealing in N_2 at 800℃ for 3 min, which iS much lower than that(>900℃)in the typical SiC metallisation process. The sheet resistance Rsh of the implanted layers is 1.5 kΩ/□. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge~+ ion implantations.

  14. Focusing of a new germanium counter type : the composite detector. Uses of the TREFLE detector in the EUROGAM multidetector; Mise au point d`un nouveau type de compteur germanium: le detecteur composite. Utilisation du detecteur TREFLE dans le multidetecteur EUROGAM

    Han, L.

    1995-05-01

    The aim of this thesis is the development of new types of germanium detectors: the composite detectors. Two types of prototypes are then conceived: the stacked planar detector (EDP) and the assembly of coaxial diodes (TREFLE). They are designed for the multidetector EUROGAM destined to the research of nuclear structure at high angular momentum. The four planar diodes of EDP detector were of 7 cm diameter and of 15 to 20 mm thick. The difference between the calculated and measured photopic efficiency is observed. The importance of surface channel induces a weak resistance of neutron damages. The sputtering method for the surface treatment reducing the germanium dead layer as well as a rule of selection concerning the impurity concentration and the thickness of crystal is helpful for the later production of germanium detector. The CLOVER detector consist of for mean size crystals in the same cryostat. The photopic efficiency is much larger than that of the greatest monocrystal detector. And the granulation of composite detector allowed the Doppler broadening correction of gamma ray observed in the nuclear reaction where the recoil velocity is very high. This new type of detector enable the linear polarization measurement of gamma ray. Twenty-four CLOVER detector are actually mounted in the EUROGAM array. The characteristics measured in source as well as in beam, reported in this thesis, meet exactly the charge account. (author). 47 refs., 61 figs., 18 tabs.

  15. Radiation-enhanced self- and boron diffusion in germanium

    Schneider, S.; Bracht, H.; Klug, J.N.

    2013-01-01

    We report experiments on proton radiation-enhanced self- and boron (B) diffusion in germanium (Ge) for temperatures between 515 ∘ C and 720 ∘ C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction...... to an enhanced self- and B diffusion in Ge. Analysis of the experimental profiles yields data for the diffusion of self-interstitials (I ) and the thermal equilibrium concentration of BI pairs in Ge. The temperature dependence of these quantities provides the migration enthalpy of I and formation enthalpy of BI...

  16. Uniaxially stressed germanium with fundamental direct band gap

    Geiger, R.; Zabel, T.; Marin, E; Gassenq, A.; Hartmann, J.-M.; Widiez, J.; Escalante, J.; Guilloy, K.; Pauc, N.; Rouchon, D.; Diaz, G. Osvaldo; Tardif, S; Rieutord, F.; Duchemin, I.; Niquet, Y. -M.

    2015-01-01

    We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with n...

  17. Phonon Quasidiffusion in Cryogenic Dark Matter Search Large Germanium Detectors

    Leman, S W; McCarthy, K A; Pyle, M; Resch, R; Sadoulet, B; Sundqvist, K M; Brink, P L; Cherry, M; Silva, E Do Couto E; Figueroa-Feliciano, E; Mirabolfathi, N; Serfass, B; Tomada, A

    2011-01-01

    We present results on quasidiffusion studies in large, 3 inch diameter, 1 inch thick [100] high purity germanium crystals, cooled to 50 mK in the vacuum of a dilution refrigerator, and exposed with 59.5 keV gamma-rays from an Am-241 calibration source. We compare data obtained in two different detector types, with different phonon sensor area coverage, with results from a Monte Carlo. The Monte Carlo includes phonon quasidiffusion and the generation of phonons created by charge carriers as they are drifted across the detector by ionization readout channels.

  18. Effect of germanium dioxide on growth of Spirulina platensis

    Cao, Ji-Xiang

    1996-12-01

    This study on the effect of different concentrations of germanium dioxide (GeO2) on the specific growth rate (SGR), pigment contents, protein content and amino acid composition of Spirulina platensis showed that Ge was not the essential element of this alga; that GeO2 could speed up growth and raise protein content of S. platensis, and could possibly influence the photosynthesis system. The concentration range of GeO2 beneficial to growth of S. platensis is from 5 100mg/l. GeO2 is proposed to be utilized to remove contamination by Chlorella spp. usually occurring in the cultivation of Spirulina.

  19. Cryostat for Ultra-low-energy Threshold Germanium Spectrometers

    Aalseth, Craig E; Fast, James E; Hossbach, Todd W; Orrell, John L; Overman, Cory T; Vandevender, Brent A

    2012-01-01

    This paper presents progress on the development of a cryostat intended to improve upon the low-energy threshold (below 0.5 keV) of p-type point contact germanium gamma-ray spectrometers. Ultra-low energy thresholds are important in the detection of low-energy nuclear recoils, an event class relevant to both dark matter direct detection and measurement of coherent neutrino-nucleus scattering. The cryostat design, including a thermal and electrical-field model, is given. A prototype cryostat has been assembled and data acquired to evaluate its vacuum and thermal performance.

  20. Properties Of Gallium-doped Hydrogenated Amorphous Germanium

    1995-01-01

    The effects of adding small quantities of gallium atoms to hydrogenated amorphous germanium (a-Ge:H) on its dark-conductivity, band-gap, electronic density of states and the hydrogen bonding, were studied in detail by dark-conductivity, optical and infrared-transmission, and photothermal- deflection-spectroscopy measurements. Films of a-Ge:H having relative Ga atomic concentrations ranging between 3×10-5 and 1×10-2 were deposited by the cosputtering of solid Ge and Ga targets in a rf-plasma s...

  1. Homo and hetero epitaxy of Germanium using isobutylgermane

    Attolini, G. [CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43010 Fontanini, Parma (Italy); Bosi, M. [CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43010 Fontanini, Parma (Italy)], E-mail: bosi@imem.cnr.it; Musayeva, N.; Pelosi, C.; Ferrari, C.; Arumainathan, S. [CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43010 Fontanini, Parma (Italy); Timo, G. [CESI Ricerca S.P.A., Via Rubattino 54, 20134 Milano (Italy)], E-mail: Gianluca.Timo@cesiricerca.it

    2008-11-03

    Nominally undoped Ge epitaxial layers were deposited on Ge and GaAs substrates by means of Metal-Organic Vapor Phase (MOVPE) using a novel Germanium source, isobutylgermane (iBuGe), by Rohm and Haas Electronic Materials LLC (USA). High Resolution X-ray Diffraction, Atomic Force Microscopy and Raman spectroscopy were combined to characterize the layers. Ge layers were deposited using AsH{sub 3} as a surfactant and several growth procedures were tested. The use of arsine reduced the growth rate and also significantly improved the epitaxial quality and surface roughness.

  2. Point defect engineering strategies to retard phosphorous diffusion in germanium

    Tahini, H. A.

    2013-01-01

    The diffusion of phosphorous in germanium is very fast, requiring point defect engineering strategies to retard it in support of technological application. Density functional theory corroborated with hybrid density functional calculations are used to investigate the influence of the isovalent codopants tin and hafnium in the migration of phosphorous via the vacancy-mediated diffusion process. The migration energy barriers for phosphorous are increased significantly in the presence of oversized isovalent codopants. Therefore, it is proposed that tin and in particular hafnium codoping are efficient point defect engineering strategies to retard phosphorous migration. © the Owner Societies 2013.

  3. Resonance-enhanced waveguide-coupled silicon-germanium detector

    Alloatti, Luca

    2016-01-01

    A photodiode with 0.55$\\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.

  4. Band Anticrossing in Dilute Germanium Carbides Using Hybrid Functionals

    Stephenson, Chad A; Qi, Meng; Penninger, Michael; Schneider, William; Wistey, Mark A

    2014-01-01

    Dilute germanium carbides (Ge1-xCx) offer a direct bandgap for compact silicon photonics, but widely varying results have been reported. This work uses ab initio simulations with HSE06 hybrid functionals and spin-orbit coupling to study the band structure behavior in the absence of defects. Contrary to Vegard's law, the conduction band minimum at k=0 is consistently found to decrease with increasing C content, while L and X valleys remain nearly unchanged. A vanishing bandgap was observed for all alloys with x>0.017. Conduction bands deviate from a constant-potential band anticrossing model except near the center of the Brillouin zone.

  5. Reduction of phosphorus diffusion in germanium by fluorine implantation

    El Mubarek, H. A. W.

    2013-12-01

    The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of FnVm clusters in the F-amorphized Ge layer. A fraction of these FnVm clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.

  6. Reduction of phosphorus diffusion in germanium by fluorine implantation

    El Mubarek, H. A. W. [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2013-12-14

    The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of F{sub n}V{sub m} clusters in the F-amorphized Ge layer. A fraction of these F{sub n}V{sub m} clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.

  7. Structural and electronic properties of hybrid silicon-germanium nanosheets

    F. L. Pérez Sánchez

    2014-12-01

    Full Text Available Using first principles molecular calculations, based on the Density Functional Theory (DFT, structural and electronic properties of hybrid graphene—like silicon—germanium circular nanosheets of hexagonal symmetry are investigated. The exchange—correlation functional of Perdew—Wang (PW in the local spin density approximation (LSDA based on the pseudopotentials of Dolg—Bergnre is applied. The finite extension nanosheets are represented by the CnHm—like cluster model with mono—hydrogenated armchair edges. Changes of the physicochemical properties were analyzed to learn on the chemical composition. We have obtained that the corrugation of the hybrid nanosheets is maintained (with respect to the pristine nanosheets of Ge and Si and is more pronounced when there is a high percentage of germanium. Moreover, hybrid nanosheets have ionic bonds (polarity in the interval from 0.18 to 0.77 D and exhibit a semimetal behavior. Three types of chemical compositions are considered: 1 the one—one relationship, 2 formation of Ge dimers and 3 formation of Ge hexagons. In each case it is observed an increase in the chemical reactivity. Finally, analyzing the work function we conclude that in cases 1 and 2 the chemical compositions improve the efficiency of the field emission and thereby they could expand the scope of nanotechnology applications.

  8. Germanium ion implantation to Improve Crystallinity during Solid Phase Epitaxy and the effect of AMU Contamination

    Lee, K. S.; Yoo, D. H.; Son, G. H.; Lee, C. H.; Noh, J. H.; Han, J. J.; Yu, Y. S.; Hyung, Y. W.; Yang, J. K.; Song, D. G.; Lim, T. J.; Kim, Y. K.; Lee, S. C.; Lee, H. D.; Moon, J. T.

    2006-11-01

    Germanium ion implantation was investigated for crystallinity enhancement during solid phase epitaxial regrowth (SPE) using high current implantation equipment. Electron back-scatter diffraction(EBSD) measurement showed numerical increase of 19 percent of signal, which might be due to pre-amorphization effect on silicon layer deposited by LPCVD process with germanium ion implantation. On the other hand, electrical property such as off-leakage current of NMOS transistor degraded in specific regions of wafers, which implied non-uniform distribution of donor-type impurities into channel area. It was confirmed that arsenic atoms were incorporated into silicon layer during germanium ion implantation. Since the equipment for germanium pre-amorphization implantation(PAI) was using several source gases such as BF3 and AsH3, atomic mass unit(AMU) contamination during PAI of germanium with AMU 74 caused the incorporation of arsenic with AMU 75 which resided in arc-chamber and other parts of the equipment. It was effective to use germanium isotope of AMU 72 to suppress AMU contamination, however it led serious reduction of productivity because of decrease in beam current by 30 percent as known to be difference in isotope abundance. It was effective to use enriched germanium source gas with AMU 72 in order to improve productivity. Spatial distribution of arsenic impurities in wafers was closely related to hardware configuration of ion implantation equipment.

  9. Discrimination of nuclear and electronic recoil events using plasma effect in germanium detectors

    Wei, W.-Z.; Liu, J.; Mei, D.-M.

    2016-07-01

    We report a new method of using the plasma time difference, which results from the plasma effect, between the nuclear and electronic recoil events in high-purity germanium detectors to distinguish these two types of events in the search for rare physics processes. The physics mechanism of the plasma effect is discussed in detail. A numerical model is developed to calculate the plasma time for nuclear and electronic recoils at various energies in germanium detectors. It can be shown that under certain conditions the plasma time difference is large enough to be observable. The experimental aspects in realizing such a discrimination in germanium detectors is discussed.

  10. Discrimination of nuclear and electronic recoil events using plasma effect in germanium detectors

    Wei, W -Z; Mei, D -M

    2016-01-01

    We report a new method of using the plasma time difference, which results from the plasma effect, between the nuclear and electronic recoil events in high-purity germanium detectors to distinguish these two types of events in the search for rare physics processes. The physics mechanism of the plasma effect is discussed in detail. A numerical model is developed to calculate the plasma time for nuclear and electronic recoils at various energies in germanium detectors. It can be shown that under certain conditions the plasma time difference is large enough to be observable. The experimental aspects in realizing such a discrimination in germanium detectors is discussed.

  11. Crystal field energy levels, spin-Hamiltonian parameters and local structures for the Cr3+ and Mn4+ centers in La3Ga5SiO14 crystals

    Mei, Yang; Chen, Bo-Wei; Zheng, Wen-Chen; Li, Bang-Xing

    2017-02-01

    The crystal field energy levels (obtained from optical spectra) together with the spin-Hamiltonian parameters g//, g⊥ and D (obtained from EPR spectra) for 3d3 ions Cr3+ and Mn4+ at the trigonal octahedral Ga3+ sites in La3Ga5SiO14 crystals are computed from the complete diagonalization (of energy matrix) method based on the two-spin-orbit-parameter model. The model takes into account the contributions due to the spin-orbit parameter of central dn ion (in the traditional crystal field theory) and that of ligand ions via covalence effect. The calculated results are in rational accord with the experimental values. The calculations also imply that the covalence of (MnO6)8- center in La3Ga5SiO14 crystals is stronger than that of (CrO6)9- center, and the impurity-induced local lattice relaxation for (MnO6)8- center is larger than that for (CrO6)9- cluster because of the larger size and charge mismatch for Mn4+ replacing Ga3+ in La3Ga5SiO14 crystals.

  12. The impact of polishing on germanium-on-insulator substrates

    Lin Wang; Ruan Yujiao; Chen Songyan; Li Cheng; Lai Hongkai; Huang Wei

    2013-01-01

    We prepared germanium-on-insulator (GOI) substrates by using Smart-CutTM and wafer bonding technology.The fabricated GOI is appropriate for polishing due to a strong bonding strength (2.4 MPa) and a sufficient bonding quality.We investigated mechanical polishing and chemical-mechanical polishing (CMP) systematically,and an appropriate polishing method-mechanical polishing combined with CMP-is obtained.As shown by AFM measurement,the RMS of GOI after polishing decreased to 0.543 nm.And the Ge peak profile of the XRD curve became symmetric,and the FWHM is about 121.7 arcsec,demonstrating a good crystal quality.

  13. Wide band polarizer with suspended germanium resonant grating

    Wugang Cao; Jianyong Ma; Changhe Zhou

    2012-01-01

    An ultra broad band polarizer that operates in the telecommunication wavelength band is proposed.This device,which consists of a single suspended germanium resonant grating layer,is designed using the inverse mathematical method and the rigorous vector diffraction theory.Calculated results indicate that the ultra broad band polarizer exhibits extremely high reflection (R > 99%) for TE polarization light and high transmission (T > 99%) for TM polarization at the wavelength range greater than 300 nm,and it has an extinction ratio of approximately 1 000 at the 1 550-nm central wavelength.The results of the rigorous coupled wave analysis indicate that the extremely wide band property of the TE polarization is caused by the excitation of strong modulation guided modes in the design wavelength range.

  14. Gamma ray polarimetry using a position sensitive germanium detector

    Kroeger, R A; Kurfess, J D; Phlips, B F

    1999-01-01

    Imaging gamma-ray detectors make sensitive polarimeters in the Compton energy regime by measuring the scatter direction of gamma rays. The principle is to capitalize on the angular dependence of the Compton scattering cross section to polarized gamma rays and measure the distribution of scatter directions within the detector. This technique is effective in a double-sided germanium detector between roughly 50 keV and 1 MeV. This paper reviews device characteristics important to the optimization of a Compton polarimeter, and summarizes measurements we have made using a device with a 5x5 cm active area, 1 cm thickness, and strip-electrodes on a 2 mm pitch.

  15. Phosphorus diffusion in germanium following implantation and excimer laser annealing

    Wang, Chen; Li, Cheng; Huang, Shihao; Lu, Weifang; Yan, Guangming; Zhang, Maotian; Wu, Huanda; Lin, Guangyang; Wei, Jiangbin; Huang, Wei; Lai, Hongkai; Chen, Songyan

    2014-05-01

    We focus our study on phosphorus diffusion in ion-implanted germanium after excimer laser annealing (ELA). An analytical model of laser annealing process is developed to predict the temperature profile and the melted depth in Ge. Based on the heat calculation of ELA, a phosphorus diffusion model has been proposed to predict the dopant profiles in Ge after ELA and fit SIMS profiles perfectly. A comparison between the current-voltage characteristics of Ge n+/p junctions formed by ELA at 250 mJ/cm2 and rapid thermal annealing at 650 °C for 15 s has been made, suggesting that ELA is promising for high performance Ge n+/p junctions.

  16. Experimental investigation on oxidation kinetics of germanium by ozone

    Wang, Xiaolei; Zhao, Zhiqian; Xiang, Jinjuan; Wang, Wenwu; Zhang, Jing; Zhao, Chao; Ye, Tianchun

    2016-12-01

    Oxidation kinetics of germanium surface by ozone at low temperature (≤400 °C) is experimentally investigated. The growth process contains two regions: initial linear growth region and following parabolic growth region. The GeOx thickness vs. oxidation time plot obeys the well-known Deal-Grove or linear parabolic model. The linear growth region contains reaction of oxygen atoms with surface bond and back bonds of outmost Ge layer. And the activation energy is experimentally estimated to be 0.06 eV. Such small activation energy indicates that the linear growth region is nearly barrier-less. The parabolic growth region starts when the oxygen atoms diffuse into back bonds of second outmost Ge layers. And the activation energy for this process is found to be 0.54 eV. Furthermore, in the ozone oxidation it is not O3 molecules but O radicals that go through the GeOx film.

  17. Laser-initiated explosive electron emission from flat germanium crystals

    Porshyn, V.; Mingels, S.; Lützenkirchen-Hecht, D.; Müller, G.

    2016-07-01

    Flat Sb-doped germanium (100) crystals were investigated in the triode configuration under pulsed tunable laser illumination (pulse duration tlaser = 3.5 ns and photon energy hν = 0.54-5.90 eV) and under DC voltages 1 MW/cm2 corresponding to a high quantum efficiency up to 3.3% and cathode currents up to 417 A. This laser-induced explosive electron emission (EEE) from Ge was characterized by its voltage-, laser power- and hν-sensitivity. The analysis of the macroscopic surface damage caused by the EEE is included as well. Moreover, we have carried out first direct measurements of electron energy distributions produced during the EEE from the Ge samples. The measured electron spectra hint for electron excitations to the vacuum level of the bulk and emission from the plasma plume with an average kinetic energy of ˜0.8 eV.

  18. Modeling of germanium detector and its sourceless calibration

    Steljić Milijana

    2008-01-01

    Full Text Available The paper describes the procedure of adapting a coaxial high-precision germanium detector to a device with numerical calibration. The procedure includes the determination of detector dimensions and establishing the corresponding model of the system. In order to achieve a successful calibration of the system without the usage of standard sources, Monte Carlo simulations were performed to determine its efficiency and pulse-height response function. A detailed Monte Carlo model was developed using the MCNP-5.0 code. The obtained results have indicated that this method represents a valuable tool for the quantitative uncertainty analysis of radiation spectrometers and gamma-ray detector calibration, thus minimizing the need for the deployment of radioactive sources.

  19. Characteristics of GRIFFIN high-purity germanium clover detectors

    Rizwan, U.; Garnsworthy, A. B.; Andreoiu, C.; Ball, G. C.; Chester, A.; Domingo, T.; Dunlop, R.; Hackman, G.; Rand, E. T.; Smith, J. K.; Starosta, K.; Svensson, C. E.; Voss, P.; Williams, J.

    2016-06-01

    The Gamma-Ray Infrastructure For Fundamental Investigations of Nuclei, GRIFFIN, is a new experimental facility for radioactive decay studies at the TRIUMF-ISAC laboratory. The performance of the 16 high-purity germanium (HPGe) clover detectors that will make up the GRIFFIN spectrometer is reported. The energy resolution, efficiency, timing resolution, crosstalk and preamplifier properties of each crystal were measured using a combination of analog and digital data acquisition techniques. The absolute efficiency and add-back factors are determined for the energy range of 80-3450 keV. The detectors show excellent performance with an average over all 64 crystals of a FWHM energy resolution of 1.89(6) keV and relative efficiency with respect to a 3 in . × 3 in . NaI detector of 41(1)% at 1.3 MeV.

  20. Specific features of phase transformations in germanium monotelluride

    Bigvava, A.D.; Gabedava, A.A.; Kunchuliya, Eh.D.; Shvangiradze, R.R.

    1981-12-01

    Phase transformations in germanium monotelluride are studied using DRON-0.5 and DRON-1 plants with high-temperature chamber GPVT-1500 at Cu, Ksub(..cap alpha..) radiation. It is shown that in the whole homogeneity range ..cap alpha.. GeTe is a metastable phase which is formed under the conditions of fast cooling of alloy from temperatures >=Tsub(cub) (temperature of transition in cubic crystal system). An equilibrium ..gamma..-phase is obtained by annealing of dispersed powders and metal-ceramic specimens of alloys with 50.3; 50.6; 50.9 at % Te. Lattice parameters of rhombic ..gamma..-phase do not depend on tellurium content in initial ..cap alpha..- phase. ..cap alpha --> gamma.. transformation is observed at any temperature less than Tsub(cub) with the change of alloy composition, namely tellurium precipitation. ..gamma..-phase transforms into ..beta.. at higher temperatures than ..cap alpha..-phase.

  1. Anomalous compression behavior of germanium during phase transformation

    Yan, Xiaozhi [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Tan, Dayong [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Guangzhou Institute of Geochemistry, Chinese Academic of Sciences, Guangzhou 510640 (China); Ren, Xiangting [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Yang, Wenge, E-mail: yangwg@hpstar.ac.cn, E-mail: duanweihe@scu.edu.cn [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439 (United States); He, Duanwei, E-mail: yangwg@hpstar.ac.cn, E-mail: duanweihe@scu.edu.cn [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Institute of Fluid Physics and National Key Laboratory of Shockwave and Detonation Physic, China Academy of Engineering Physics, Mianyang 621900 (China); Mao, Ho-Kwang [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439 (United States); Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015 (United States)

    2015-04-27

    In this article, we present the abnormal compression and plastic behavior of germanium during the pressure-induced cubic diamond to β-tin structure transition. Between 8.6 GPa and 13.8 GPa, in which pressure range both phases are co-existing, first softening and followed by hardening for both phases were observed via synchrotron x-ray diffraction and Raman spectroscopy. These unusual behaviors can be interpreted as the volume misfit between different phases. Following Eshelby, the strain energy density reaches the maximum in the middle of the transition zone, where the switch happens from softening to hardening. Insight into these mechanical properties during phase transformation is relevant for the understanding of plasticity and compressibility of crystal materials when different phases coexist during a phase transition.

  2. Towards monolithic integration of germanium light sources on silicon chips

    Saito, Shinichi; Zaher Al-Attili, Abdelrahman; Oda, Katsuya; Ishikawa, Yasuhiko

    2016-04-01

    Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with complementary metal-oxide-semiconductor processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.

  3. Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals

    Stephenson, Chad A.; O'brien, William A.; Qi, Meng; Penninger, Michael; Schneider, William F.; Wistey, Mark A.

    2016-04-01

    Dilute germanium carbides (Ge1- x C x ) offer a direct bandgap for compact silicon photonics, but widely varying properties have been reported. This work reports improved band structure calculations for Ge1- x C x using ab initio simulations that employ the HSE06 exchange-correlation density functional. Contrary to Vegard's law, the conduction band minimum at Γ is consistently found to decrease with increasing C content, while L and X valleys change much more slowly. The calculated Ge bandgap is within 11% of experimental values. A decrease in energy at the Γ conduction band valley of (170 meV ± 50)/%C is predicted, leading to a direct bandgap for x > 0.008. These results indicate a promising material for Group IV lasers.

  4. Radiation-electromagnetic effect in germanium single crystals

    Kikoin, I.K.; Kikoin, L.I.; Lazarev, S.D.

    1980-10-01

    An experimental study was made of the radiation-electromagnetic effect in germanium single crystals when excess carriers were generated by bombardment with ..cap alpha.. particles, protons, or x rays in magnetic fields up to 8 kOe. The source of ..cap alpha.. particles and protons was a cyclotron and x rays were provided by a tube with a copper anode. The radiation-electromagnetic emf increased linearly on increase in the magnetic field and was directly proportional to the flux of charged particles at low values of the flux, reaching saturation at high values of the flux (approx.5 x 10/sup 11/ particles .cm/sup -2/ .sec/sup -1/). In the energy range 4--40 MeV the emf was practically independent of the ..cap alpha..-particle energy. The sign of the emf was reversed when samples with a ground front surface were irradiated. Measurements of the photoelectromagnetic and Hall effects in the ..cap alpha..-particle-irradiated samples showed that a p-n junction was produced by these particles and its presence should be allowed for in investigations of the radiation-electromagnetic effect. The measured even radiation-electromagnetic emf increased quadratically on increase in the magnetic field. An investigation was made of the barrier radiation-voltaic effect (when the emf was measured between the irradiated and unirradiated surfaces). Special masks were used to produce a set of consecutive p-n junctions in germanium crystals irradiated with ..cap alpha.. particles. A study of the photovoltaic and photoelectromagnetic effects in such samples showed that the method could be used to increase the efficiency of devices utilizing the photoelectromagnetic effect.

  5. Sensitivity comparison of intrinsic germanium detectors with various efficiencies

    Buker, L.M.L.

    1990-12-01

    Scientists today are being asked to measure concentrations of radionuclides at increasingly lower levels. This creates a demand for better resolution detectors with larger efficiencies that can provide the necessary sensitivity to accurately determine low levels of radioactivity. This study has acquired a large volume of empirical data for a wide range of relative efficiency germanium detectors. The purpose was to determine the sensitivity of various efficiency high-purity (P-type) germanium detectors produced by a single manufacturer. Selecting efficiency as the only variable and essentially all other variables remaining constant narrowed the field of detectors to 30. This investigation compares the response for the lower limit of detection (LLD), figure-of-merit (FOM), and minimum detectable activity (MDA) versus efficiency. In addition to the efficiency, the resolution, background, peak-to-Compton (P/C), and crystal shape of a p-type detector are of particular importance when considering the parameters of a detectors performance. A concise summary of the results is that the detector of choice for low energy measurements would be a 25% detector with resolution better than 1.8 keV FWHM for the 1.332 keV energy of Co-60. The detector of choice for energy levels greater than 500 keV would be a high efficiency low background detector. If the entire energy range is of interest, then a 70% low background detector with a high P/C and a resolution better than 1.9 keV would yield the lowest MDA and assure the most efficient counting times. 9 refs., 25 figs., 6 tabs.

  6. Research progress of Si-based germanium materials and devices

    Buwen, Cheng; Cheng, Li; Zhi, Liu; Chunlai, Xue

    2016-08-01

    Si-based germanium is considered to be a promising platform for the integration of electronic and photonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as: (1) the nature of indirect band gap of Ge; (2) the epitaxy of dislocation-free Ge layers on Si substrate; and (3) the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on-insulator (GOI) materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n+p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits. Project supported in part by the National Natural Science Foundation (Nos. 61036003, 61435013) and the Major State Basic Research Development Program of China (No. 2013CB632103).

  7. Impurity distribution in high purity germanium crystal and its impact on the detector performance

    Wang, Guojian; Amman, Mark; Mei, Hao; Mei, Dongming; Irmscher, Klaus; Guan, Yutong; Yang, Gang

    High-purity germanium crystals were grown in a hydrogen atmosphere using the Czochralski method. The axial and radial distributions of impurities in the crystals were measured by Hall effect and Photo-thermal ionization spectroscopy (PTIS). Amorphous semiconductor contacts were deposited on the germanium crystals to make detectors. Three planar detectors were fabricated from three crystals with different net carrier concentrations (1.7, 7.9 and 10x1010 cm-3). We evaluated the electrical and spectral performance of three detectors. Measurements of gamma-ray spectra from 137Cs, 241Am and 60Co sources demonstrate that the detectors have excellent energy resolution. The relationship between the impurities and detector's energy resolution was analyzed. Keywords: High-purity germanium crystal, High-purity germanium detector This work is supported by DOE grant DE-FG02-10ER46709 and the state of South Dakota..

  8. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

    Hussain, Aftab M.

    2013-08-16

    We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared Project

    National Aeronautics and Space Administration — We propose to fabricate a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate a suitably-doped active layer...

  10. An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared Project

    National Aeronautics and Space Administration — We propose to investigate the feasibility of fabricating a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate...

  11. Contribution of a germanium detector in mobile gamma-ray spectrometry. Spectral analysis and performance

    Gutierrez, S; Bourgeois, C

    2002-01-01

    The sensitivity of the germanium semi-conductor detector is 30 times lower than that of the sodium iodide (NaI) detectors frequently used in airborne spectrometry. Its energy resolution however, is 20 times better, giving more accurate identification of radionuclides, especially when complex spectra are involved. The use of the germanium detector in mobile gamma-ray spectrometry provides a large amount of qualitative and quantitative information. In post-accident situations a germanium detector will be sufficient, and should therefore be used in preference to a NaI detector. An algorithm for detecting the total absorption peaks by studying the variations in the spectral profile of germanium gamma-ray spectra has been developed at the CEA. The use of digital filters that take into account the characteristics of the absorption peaks reduces the statistical fluctuations, making possible detection based on the analysis of the first and second derivatives. The absorption peak is then estimated by subtracting the b...

  12. Electronic and magnetic properties of Fe and Mn doped two dimensional hexagonal germanium sheets

    Soni, Himadri R., E-mail: himadri.soni@gmail.com; Jha, Prafulla K., E-mail: himadri.soni@gmail.com [Department of Physics, Maharaja Krishnakumarsinhji Bhavnagar University, Bhavnagar-364001 (India)

    2014-04-24

    Using first principles density functional theory calculations, the present paper reports systematic total energy calculations of the electronic properties such as density of states and magnetic moment of pristine and iron and manganese doped two dimensional hexagonal germanium sheets.

  13. Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain

    Guilloy, K.; Pauc, N.; Gassenq, A.; Niquet, Y. M.; Escalante, J. M.; Duchemin, I.; Tardif, S; Dias, G. Osvaldo; Rouchon, D.; Widiez, J.; Hartmann, J.M.; Geiger, R.; Zabel, T.; Sigg, H; Faist, J.

    2016-01-01

    Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress ger...

  14. The Primary and Secondary Production of Germanium: A Life-Cycle Assessment of Different Process Alternatives

    Robertz, Benedicte; Verhelle, Jensen; Schurmans, Maarten

    2015-02-01

    Germanium is a semiconducting metalloid element used in optical fibers, catalysis, infrared optics, solar cells, and light-emitting diodes. The need for Ge in these markets is considered to increase by a steady ~1% on a yearly basis. Its economic importance, coupled with the identified supply risks, has led to the classification of germanium as a critical raw material within Europe. Since the early 1950s, Umicore Electro-Optic Materials has supplied germanium-based materials solutions to its markets around the world. Umicore extracts germanium from a wide range of refining and recycling feeds. The main objectives of this study were to quantify the potential environmental impacts of the production of germanium from production scraps from the photovoltaic industry and to compare them with the potential impacts of the primary production of germanium from coal. The data related to the secondary production are Umicore-specific data. Environmental impact scores have been calculated for the impact categories recommended by the International reference life cycle data system. The comparison of the primary and secondary production highlights the benefit linked to the recycling of metals.

  15. Optical properties of Germanium nanoparticles synthesized by pulsed laser ablation in acetone

    Saikiran eVadavalli

    2014-10-01

    Full Text Available Germanium (Ge nanoparticles (NPs are synthesized by means of pulsed laser ablation of bulk germanium target immersed in acetone with ns laser pulses at different pulse energies. The fabricated NPs are characterized by employing different techniques such as UV-visible absorption spectroscopy, photoluminescence, micro-Raman spectroscopy, transmission electron microscopy (TEM and field emission scanning electron microscopy (FESEM. The mean size of the Ge NPs is found to vary from few nm to 40 nm with the increase in laser pulse energy. Shift in the position of the absorption spectra is observed and also the photoluminescence peak shift is observed due to quantum confinement effects. High resolution TEM combined with micro-Raman spectroscopy confirms the crystalline nature of the generated germanium nanoparticles. The formation of various sizes of germanium NPs at different laser pulse energies is evident from the asymmetry in the Raman spectra and the shift in its peak position towards the lower wavenumber side. The FESEM micrographs confirm the formation of germanium micro/nanostructures at the laser ablated position of the bulk germanium. In particular, the measured NP sizes from the micro-Raman phonon quantum confinement model are found in good agreement with TEM measurements of Ge NPs.

  16. The Effects of Germanium Biotite Supplement as a Prophylactic Agent against Respiratory Infection in Calves

    Myunghwan Jung1, Bock-Gie Jung2, Seung Bin Cha1, Min-Kyoung Shin1, Won-Jung Lee1, Seung Won Shin1, Jin-A Lee2, Yeon-Kwon Jung3, Bong-Joo Lee2 and Han Sang Yoo1*

    2012-06-01

    Full Text Available Germanium biotite, a natural mineral, is comprised of mainly silicate. This mineral showed activities of increase in feed efficiency and non-specific immunostimulation in previous studies. The aims of the present study were to evaluate the prophylactic effects of germanium biotite against respiratory diseases in calves as a feed supplement and investigate the possibilities of the substitution of antibiotics with germanium biotite as feed additive. To achieve these purposes, bovine herpesvirus-1 (BHV-1 and Mannheimia haemolytica serotype A1 were experimentally inoculated into the calves. After challenge, germanium biotite showed a lower cumulative clinical score (CCS than the control group. In accordance with these clinical results, enhanced clearance of BHV-1, a low infection rate of Mannheimia haemolytica serotype A1, tempered superficial lesions, and moderated histopathological signs were observed in the germanium biotite group, compared with the control group. The results of the present study indicated that germanium biotite had prophylactic effects against bovine respiratory disease and could be a candidate for a new alternative feed supplement in calves, through its effects as a non-specific immune stimulator.

  17. The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms

    2011-09-01

    The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms by Gregory A. Mitchell...Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile Technology Platforms 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...MD 20783-1197 ARL-TN-0459 September 2011 The Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in Mobile

  18. HEROICA: an underground facility for the fast screening of germanium detectors

    Andreotti, E.; Garfagnini, A.; Maneschg, W.; Barros, N.; Benato, G.; Brugnera, R.; Costa, F.; Falkenstein, R.; Guthikonda, K. K.; Hegai, A.; Hemmer, S.; Hult, M.; Jänner, K.; Kihm, T.; Lehnert, B.; Liao, H.; Lubashevskiy, A.; Lutter, G.; Marissens, G.; Modenese, L.; Pandola, L.; Reissfelder, M.; Sada, C.; Salathe, M.; Schmitt, C.; Schulz, O.; Schwingenheuer, B.; Turcato, M.; Ur, C.; von Sturm, K.; Wagner, V.; Westermann, J.

    2013-06-01

    HEROICA (Hades Experimental Research Of Intrinsic Crystal Appliances) is an infrastructure to characterize germanium detectors and has been designed and constructed at the HADES Underground Research Laboratory, located in Mol (Belgium). Thanks to the 223 m overburden of clay and sand, the muon flux is lowered by four orders of magnitude. This natural shield minimizes the exposure of radio-pure germanium material to cosmic radiation resulting in a significant suppression of cosmogenic activation in the germanium detectors. The project has been strongly motivated by a special production of germanium detectors for the GERDA experiment. GERDA, currently collecting data at the Laboratori Nazionali del Gran Sasso of INFN, is searching for the neutrinoless double beta decay of 76Ge. In the near future, GERDA will increase its mass and sensitivity by adding new Broad Energy Germanium (BEGe) detectors. The production of the BEGe detectors is done at Canberra in Olen (Belgium), located about 30 km from the underground test site. Therefore, HADES is used both for storage of the crystals over night, during diode production, and for the characterization measurements. A full quality control chain has been setup and tested on the first seven prototype detectors delivered by the manufacturer at the beginning of 2012. The screening capabilities demonstrate that the installed setup fulfills a fast and complete set of measurements on the diodes and it can be seen as a general test facility for the fast screening of high purity germanium detectors. The results are of major importance for a future massive production and characterization chain of germanium diodes foreseen for a possible next generation 1-tonne double beta decay experiment with 76Ge.

  19. Environmental Radioactivity: Gamma Ray Spectroscopy with Germanium detector

    Vyas, Gargi; Beausang, Cornelius; Hughes, Richard; Tarlow, Thomas; Gell, Kristen; University of Richmond Physics Team

    2013-10-01

    A CF-1000BRL series portable Air Particle Sampler with filter paper as filter media was placed in one indoor and one outdoor location at 100 LPM flow rate on six dates under alternating rainy and warm weather conditions over the course of sixteen days in May 2013. The machine running times spanned between 6 to 69 hours. Each filter paper was then put in a germanium gamma ray detector, and the counts ranged from 93000 to 250000 seconds. The spectra obtained were analyzed by the CANBERRA Genie 2000 software, corrected using a background spectrum, and calibrated using a 20.27 kBq activity multi-nuclide source. We graphed the corrected counts (from detector analysis time)/second (from air sampler running time)/liter (from the air sampler's flow rate) of sharp, significantly big peaks corresponding to a nuclide in every sample against the sample number along with error bars. The graphs were then used to compare the samples and they showed a similar trend. The slight differences were usually due to the different running times of the air sampler. The graphs of about 22 nuclides were analyzed. We also tried to recognize the nuclei to which several gamma rays belonged that were displayed but not recognized by the Genie 2000 software.

  20. Etching of germanium-tin using ammonia peroxide mixture

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  1. Radium needle used to calibrate germanium gamma-ray detector.

    Kamboj, S; Lovett, D; Kahn, B; Walker, D

    1993-03-01

    A standard platinum-iridium needle that contains 374 MBq 226Ra was tested as a source for calibrating a portable germanium detector used with a gamma-ray spectrometer for environmental radioactivity measurements. The counting efficiencies of the 11 most intense gamma rays emitted by 226Ra and its short-lived radioactive progeny at energies between 186 and 2,448 keV were determined, at the full energy peaks, to construct a curve of counting efficiency vs. energy. The curve was compared to another curve between 43 and 1,596 keV obtained with a NIST mixed-radionuclide standard. It was also compared to the results of a Monte Carlo simulation. The 226Ra source results were consistent with the NIST standard between 248 and 1,596 keV. The Monte Carlo simulation gave a curve parallel to the curve for the combined radium and NIST standard data between 250 and 2,000 keV, but at higher efficiency.

  2. Ion beam induced stress formation and relaxation in germanium

    Steinbach, T., E-mail: Tobias.Steinbach@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Reupert, A.; Schmidt, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

    2013-07-15

    Ion irradiation of crystalline solids leads not only to defect formation and amorphization but also to mechanical stress. In the past, many investigations in various materials were performed focusing on the ion beam induced damage formation but only several experiments were done to investigate the ion beam induced stress evolution. Especially in microelectronic devices, mechanical stress leads to several unwanted effects like cracking and peeling of surface layers as well as changing physical properties and anomalous diffusion of dopants. To study the stress formation and relaxation process in semiconductors, crystalline and amorphous germanium samples were irradiated with 3 MeV iodine ions at different ion fluence rates. The irradiation induced stress evolution was measured in situ with a laser reflection technique as a function of ion fluence, whereas the damage formation was investigated by means of Rutherford backscattering spectrometry. The investigations show that mechanical stress builds up at low ion fluences as a direct consequence of ion beam induced point defect formation. However, further ion irradiation causes a stress relaxation which is attributed to the accumulation of point defects and therefore the creation of amorphous regions. A constant stress state is reached at high ion fluences if a homogeneous amorphous surface layer was formed and no further ion beam induced phase transition took place. Based on the results, we can conclude that the ion beam induced stress evolution seems to be mainly dominated by the creation and accumulation of irradiation induced structural modification.

  3. Improved constraints on WIMPs from the International Germanium Experiment IGEX

    Morales, A; Brodzinski, R L; Cebrián, S; García, E; Irastorza, I G; Kirpichnikov, I V; Klimenko, A A; Miley, H S; Morales, J; De Solorzano, A O; Osetrov, S B; Pogosov, V S; Puimedón, J; Reeves, J H; Sarsa, M L; Smolnikov, A A; Tamanyan, A G; Vasenko, A A; Vasilev, S I; Villar, J A

    2002-01-01

    One IGEX 76Ge double-beta decay detector is currently operating in the Canfranc Underground Laboratory in a search for dark matter WIMPs, through the Ge nuclear recoil produced by the WIMP elastic scattering. A new exclusion plot, has been derived for WIMP-nucleon spin-independent interactions. To obtain this result, 40 days of data from the IGEX detector (energy threshold E \\~ 4 keV), recently collected, have been analyzed. These data improve the exclusion limits derived from all the other ionization germanium detectors in the mass region from 20 GeV to 200 GeV, where a WIMP supposedly responsible for the annual modulation effect reported by the DAMA experiment would be located. The new IGEX exclusion contour enters, by the first time, the DAMA region by using only raw data, with no background discrimination, and excludes its upper left part. It is also shown that with a moderate improvement of the detector performances, the DAMA region could be fully explored.

  4. Techniques to distinguish between electron and photon induced events using segmented germanium detectors

    Kroeninger, K.

    2007-06-05

    Two techniques to distinguish between electron and photon induced events in germanium detectors were studied: (1) anti-coincidence requirements between the segments of segmented germanium detectors and (2) the analysis of the time structure of the detector response. An 18-fold segmented germanium prototype detector for the GERDA neutrinoless double beta-decay experiment was characterized. The rejection of photon induced events was measured for the strongest lines in {sup 60}Co, {sup 152}Eu and {sup 228}Th. An accompanying Monte Carlo simulation was performed and the results were compared to data. An overall agreement with deviations of the order of 5-10% was obtained. The expected background index of the GERDA experiment was estimated. The sensitivity of the GERDA experiment was determined. Special statistical tools were developed to correctly treat the small number of events expected. The GERDA experiment uses a cryogenic liquid as the operational medium for the germanium detectors. It was shown that germanium detectors can be reliably operated through several cooling cycles. (orig.)

  5. A-centers and isovalent impurities in germanium: Density functional theory calculations

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom); Londos, C.A. [University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece); Bracht, H. [Institute of Materials Physics, University of Muenster, Wilhelm-Klemm-Strasse 10, D-48149 Muenster (Germany)

    2011-03-25

    In the present study density functional theory calculations have been used to calculate the binding energies of clusters formed between lattice vacancies, oxygen and isovalent atoms in germanium. In particular we concentrated on the prediction of binding energies of A-centers or oxygen interstitials that are at nearest and next nearest neighbor sites to isovalent impurities (carbon, silicon and tin) in germanium. The A-center is an oxygen interstitial atom near a lattice vacancy and is an important impurity-defect pair in germanium. In germanium doped with carbon or silicon, we calculated that most of the binding energy of the cluster formed between A-centers and the carbon or silicon atoms is due to the interaction between the oxygen interstitial atom and the carbon or silicon atoms. For tin-doped germanium most of the binding energy is due to the interaction of the oversized tin atom and the lattice vacancy, which essentially provide space for tin to relax. The nearest neighbor carbon-oxygen interstitial and the silicon-oxygen interstitial pairs are significantly bound, whereas the tin-oxygen interstitial pairs are not. The results are discussed in view of analogous investigations in isovalently doped silicon.

  6. Biallelic and Genome Wide Association Mapping of Germanium Tolerant Loci in Rice (Oryza sativa L..

    Partha Talukdar

    Full Text Available Rice plants accumulate high concentrations of silicon. Silicon has been shown to be involved in plant growth, high yield, and mitigating biotic and abiotic stresses. However, it has been demonstrated that inorganic arsenic is taken up by rice through silicon transporters under anaerobic conditions, thus the ability to efficiently take up silicon may be considered either a positive or a negative trait in rice. Germanium is an analogue of silicon that produces brown lesions in shoots and leaves, and germanium toxicity has been used to identify mutants in silicon and arsenic transport. In this study, two different genetic mapping methods were performed to determine the loci involved in germanium sensitivity in rice. Genetic mapping in the biparental cross of Bala × Azucena (an F6 population and a genome wide association (GWA study with 350 accessions from the Rice Diversity Panel 1 were conducted using 15 μM of germanic acid. This identified a number of germanium sensitive loci: some co-localised with previously identified quantitative trait loci (QTL for tissue silicon or arsenic concentration, none co-localised with Lsi1 or Lsi6, while one single nucleotide polymorphism (SNP was detected within 200 kb of Lsi2 (these are genes known to transport silicon, whose identity was discovered using germanium toxicity. However, examining candidate genes that are within the genomic region of the loci detected above reveals genes homologous to both Lsi1 and Lsi2, as well as a number of other candidate genes, which are discussed.

  7. Performance of the Fully Digital FPGA-based Front-End Electronics for the GALILEO Array

    Barrientos, D; Bazzacco, D; Bortolato, D; Cocconi, P; Gadea, A; González, V; Gulmini, M; Isocrate, R; Mengoni, D; Pullia, A; Recchia, F; Rosso, D; Sanchis, E; Toniolo, N; Ur, C A; Valiente-Dobón, J J

    2014-01-01

    In this work we present the architecture and results of a fully digital Front End Electronics (FEE) read out system developed for the GALILEO array. The FEE system, developed in collaboration with the Advanced Gamma Tracking Array (AGATA) collaboration, is composed of three main blocks: preamplifiers, digitizers and preprocessing electronics. The slow control system contains a custom Linux driver, a dynamic library and a server implementing network services. The digital processing of the data from the GALILEO germanium detectors has demonstrated the capability to achieve an energy resolution of 1.53 per mil at an energy of 1.33 MeV.

  8. Normal processes of phonon-phonon scattering and thermal conductivity of germanium crystals with isotopic disorder

    Kuleev, I G

    2001-01-01

    The effect of normal processes of the phonon-phonon scattering on the thermal conductivity of the germanium crystals with various isotopic disorder degrees is considered. The phonon pulse redistribution in the normal scattering processes both inside each oscillatory branch (the Simons mechanism) and between various phonon oscillatory branches (the Herring mechanism) is accounted for. The contributions of the longitudinal and cross-sectional phonons drift motion into the thermal conductivity are analyzed. It is shown that the pulse redistribution in the Herring relaxation mechanism leads to essential suppression of the longitudinal phonons drift motion in the isotopically pure germanium crystals. The calculations results of thermal conductivity for the Herring relaxation mechanism agree well with experimental data on the germanium crystals with various isotopic disorder degrees

  9. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    Chroneos, A.; Dimoulas, A. [MBE Laboratory, Institute of Materials Science, NCSR Demokritos, Athens (Greece); Schwingenschloegl, U. [PSE Division, KAUST, Thuwal (Saudi Arabia)

    2012-04-02

    In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Two-Dimensional Spatial Imaging of Charge Transport in Germanium Crystals at Cryogenic Temperatures

    Moffatt, Robert [Stanford U.

    2016-01-01

    In this dissertation, I describe a novel apparatus for studying the transport of charge in semiconductors at cryogenic temperatures. The motivation to conduct this experiment originated from an asymmetry observed between the behavior of electrons and holes in the germanium detector crystals used by the Cryogenic Dark Matter Search (CDMS). This asymmetry is a consequence of the anisotropic propagation of electrons in germanium at cryogenic temperatures. To better model our detectors, we incorporated this effect into our Monte Carlo simulations of charge transport. The purpose of the experiment described in this dissertation is to test those models in detail. Our measurements have allowed us to discover a shortcoming in our most recent Monte Carlo simulations of electrons in germanium. This discovery would not have been possible without the measurement of the full, two-dimensional charge distribution, which our experimental apparatus has allowed for the first time at cryogenic temperatures.

  11. Size Controlled Synthesis of Germanium Nanocrystals: Effect of Ge Precursor and Hydride Reducing Agent

    Darragh Carolan

    2015-01-01

    Full Text Available Germanium nanocrystals (Ge NCs have attracted increasing attention as a promising alternative to II–VI and IV–VI semiconductor materials as they are cheap, “green,” electrochemically stable, and compatible with existing CMOS processing methods. Germanium is a particularly attractive material for optoelectronic applications as it combines a narrow band gap with high carrier mobilities and a large exciton Bohr radius. Solution-phase synthesis and characterisation of size monodisperse alkyl-terminated Ge NCs are demonstrated. Ge NCs were synthesised under inert atmospheric conditions via the reduction of Ge halide salts (GeX4 by hydride reducing agents within inverse micelles. Regulation of NC size is achieved by variation of germanium precursor and the strength of hydride reducing agents used. UV-Visible absorbance and photoluminescence spectroscopy showed strong significant quantum confinement effects, with moderate absorption in the UV spectral range, and strong emission in the violet with a marked dependence on excitation wavelength.

  12. Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

    Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

    2009-07-01

    Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    Chroneos, Alexander I.

    2012-01-26

    In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Diffusion of interstitial oxygen in silicon and germanium: a hybrid functional study

    Colleoni, Davide; Pasquarello, Alfredo

    2016-12-01

    The minimum-energy paths for the diffusion of an interstitial O atom in silicon and germanium are studied through the nudged-elastic-band method and hybrid functional calculations. The reconsideration of the diffusion of O in silicon primarily serves the purpose of validating the procedure for studying the O diffusion in germanium. Our calculations show that the minimum energy path goes through an asymmetric transition state in both silicon and germanium. The stability of these transition states is found to be enhanced by the generation of unpaired electrons in the highest occupied single-particle states. Calculated energy barriers are 2.54 and 2.14 eV for Si and Ge, in very good agreement with corresponding experimental values of 2.53 and 2.08 eV, respectively.

  15. Silicon-germanium (Sige) nanostructures production, properties and applications in electronics

    Usami, N

    2011-01-01

    Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and mo...

  16. Search for Pauli exclusion principle violating atomic transitions and electron decay with a p-type point contact germanium detector

    Abgrall, N.; Bradley, A.W.; Chan, Y.D.; Mertens, S.; Poon, A.W.P. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Arnquist, I.J.; Hoppe, E.W.; Kouzes, R.T.; LaFerriere, B.D.; Orrell, J.L. [Pacific Northwest National Laboratory, Richland, WA (United States); Avignone, F.T. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); University of South Carolina, Department of Physics and Astronomy, Columbia, SC (United States); Barabash, A.S.; Konovalov, S.I.; Yumatov, V. [National Research Center ' ' Kurchatov Institute' ' Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Bertrand, F.E.; Galindo-Uribarri, A.; Radford, D.C.; Varner, R.L.; White, B.R.; Yu, C.H. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Brudanin, V.; Shirchenko, M.; Vasilyev, S.; Yakushev, E.; Zhitnikov, I. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Busch, M. [Duke University, Department of Physics, Durham, NC (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); Buuck, M.; Cuesta, C.; Detwiler, J.A.; Gruszko, J.; Guinn, I.S.; Leon, J.; Robertson, R.G.H. [University of Washington, Department of Physics, Center for Experimental Nuclear Physics and Astrophysics, Seattle, WA (United States); Caldwell, A.S.; Christofferson, C.D.; Dunagan, C.; Howard, S.; Suriano, A.M. [South Dakota School of Mines and Technology, Rapid City, SD (United States); Chu, P.H.; Elliott, S.R.; Goett, J.; Massarczyk, R.; Rielage, K. [Los Alamos National Laboratory, Los Alamos, NM (United States); Efremenko, Yu. [University of Tennessee, Department of Physics and Astronomy, Knoxville, TN (United States); Ejiri, H. [Osaka University, Research Center for Nuclear Physics, Ibaraki, Osaka (Japan); Finnerty, P.S.; Gilliss, T.; Giovanetti, G.K.; Henning, R.; Howe, M.A.; MacMullin, J.; Meijer, S.J.; O' Shaughnessy, C.; Rager, J.; Shanks, B.; Trimble, J.E.; Vorren, K.; Xu, W. [Triangle Universities Nuclear Laboratory, Durham, NC (United States); University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC (United States); Green, M.P. [North Carolina State University, Department of Physics, Raleigh, NC (United States); Oak Ridge National Laboratory, Oak Ridge, TN (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); Guiseppe, V.E.; Tedeschi, D.; Wiseman, C. [University of South Carolina, Department of Physics and Astronomy, Columbia, SC (United States); Jasinski, B.R. [University of South Dakota, Department of Physics, Vermillion, SD (United States); Keeter, K.J. [Black Hills State University, Department of Physics, Spearfish, SD (United States); Kidd, M.F. [Tennessee Tech University, Cookeville, TN (United States); Martin, R.D. [Queen' s University, Department of Physics, Engineering Physics and Astronomy, Kingston, ON (Canada); Romero-Romero, E. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); University of Tennessee, Department of Physics and Astronomy, Knoxville, TN (United States); Vetter, K. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); University of California, Department of Nuclear Engineering, Berkeley, CA (United States); Wilkerson, J.F. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); University of North Carolina, Department of Physics and Astronomy, Chapel Hill, NC (United States)

    2016-11-15

    A search for Pauli-exclusion-principle-violating K{sub α} electron transitions was performed using 89.5 kg-d of data collected with a p-type point contact high-purity germanium detector operated at the Kimballton Underground Research Facility. A lower limit on the transition lifetime of 5.8 x 10{sup 30} s at 90% C.L. was set by looking for a peak at 10.6 keV resulting from the X-ray and Auger electrons present following the transition. A similar analysis was done to look for the decay of atomic K-shell electrons into neutrinos, resulting in a lower limit of 6.8 x 10{sup 30} s at 90% C.L. It is estimated that the Majorana Demonstrator, a 44 kg array of p-type point contact detectors that will search for the neutrinoless double-beta decay of {sup 76}Ge, could improve upon these exclusion limits by an order of magnitude after three years of operation. (orig.)

  17. Search for Pauli Exclusion Principle Violating Atomic Transitions and Electron Decay with a P-type Point Contact Germanium Detector

    Abgrall, N; Avignone, F T; Barabash, A S; Bertrand, F E; Bradley, A W; Brudanin, V; Busch, M; Buuck, M; Caldwell, A S; Chan, Y-D; Christofferson, C D; Chu, P -H; Cuesta, C; Detwiler, J A; Dunagan, C; Efremenko, Yu; Ejiri, H; Elliott, S R; Finnerty, P S; Galindo-Uribarri, A; Gilliss, T; Giovanetti, G K; Goett, J; Green, M P; Gruszko, J; Guinn, I S; Guiseppe, V E; Henning, R; Hoppe, E W; Howard, S; Howe, M A; Jasinski, B R; Keeter, K J; Kidd, M F; Konovalov, S I; Kouzes, R T; LaFerriere, B D; Leon, J; MacMullin, J; Martin, R D; Massarczyk, R; Meijer, S J; Mertens, S; Orrell, J L; O'Shaughnessy, C; Poon, A W P; Radford, D C; Rager, J; Rielage, K; Robertson, R G H; Romero-Romero, E; Shanks, B; Shirchenko, M; Suriano, A M; Tedeschi, D; Trimble, J E; Varner, R L; Vasilyev, S; Vetter, K; Vorren, K; White, B R; Wilkerson, J F; Wiseman, C; Xu, W; Yakushev, E; Yu, C -H; Yumatov, V; Zhitnikov, I

    2016-01-01

    A search for Pauli-exclusion-principle-violating K-alpha electron transitions was performed using 89.5 kg-d of data collected with a p-type point contact high-purity germanium detector operated at the Kimballton Underground Research Facility. A lower limit on the transition lifetime of 5.8x10^30 seconds at 90% C.L. was set by looking for a peak at 10.6 keV resulting from the x-ray and Auger electrons present following the transition. A similar analysis was done to look for the decay of atomic K-shell electrons into neutrinos, resulting in a lower limit of 6.8x10^30 seconds at 90 C.L. It is estimated that the MAJORANA DEMONSTRATOR, a 44 kg array of p-type point contact detectors that will search for the neutrinoless double-beta decay of 76-Ge, could improve upon these exclusion limits by an order of magnitude after three years of operation.

  18. PREFACE: 2nd Workshop on Germanium Detectors and Technologies

    Abt, I.; Majorovits, B.; Keller, C.; Mei, D.; Wang, G.; Wei, W.

    2015-05-01

    The 2nd workshop on Germanium (Ge) detectors and technology was held at the University of South Dakota on September 14-17th 2014, with more than 113 participants from 8 countries, 22 institutions, 15 national laboratories, and 8 companies. The participants represented the following big projects: (1) GERDA and Majorana for the search of neutrinoless double-beta decay (0νββ) (2) SuperCDMS, EDELWEISS, CDEX, and CoGeNT for search of dark matter; (3) TEXONO for sub-keV neutrino physics; (4) AGATA and GRETINA for gamma tracking; (5) AARM and others for low background radiation counting; (5) as well as PNNL and LBNL for applications of Ge detectors in homeland security. All participants have expressed a strong desire on having better understanding of Ge detector performance and advancing Ge technology for large-scale applications. The purpose of this workshop was to leverage the unique aspects of the underground laboratories in the world and the germanium (Ge) crystal growing infrastructure at the University of South Dakota (USD) by brining researchers from several institutions taking part in the Experimental Program to Stimulate Competitive Research (EPSCoR) together with key leaders from international laboratories and prestigious universities, working on the forefront of the intensity to advance underground physics focusing on the searches for dark matter, neutrinoless double-beta decay (0νββ), and neutrino properties. The goal of the workshop was to develop opportunities for EPSCoR institutions to play key roles in the planned world-class research experiments. The workshop was to integrate individual talents and existing research capabilities, from multiple disciplines and multiple institutions, to develop research collaborations, which includes EPSCor institutions from South Dakota, North Dakota, Alabama, Iowa, and South Carolina to support multi-ton scale experiments for future. The topic areas covered in the workshop were: 1) science related to Ge

  19. Detached Solidification of Germanium-Silicon Crystals on the ISS

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2016-01-01

    A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  20. Systematic Uncertainties in High-Rate Germanium Data

    Gilbert, Andrew J.; Fast, James E.; Fulsom, Bryan G.; Pitts, William K.; VanDevender, Brent A.; Wood, Lynn S.

    2016-10-06

    For many nuclear material safeguards inspections, spectroscopic gamma detectors are required which can achieve high event rates (in excess of 10^6 s^-1) while maintaining very good energy resolution for discrimination of neighboring gamma signatures in complex backgrounds. Such spectra can be useful for non-destructive assay (NDA) of spent nuclear fuel with long cooling times, which contains many potentially useful low-rate gamma lines, e.g., Cs-134, in the presence of a few dominating gamma lines, such as Cs-137. Detectors in use typically sacrifice energy resolution for count rate, e.g., LaBr3, or visa versa, e.g., CdZnTe. In contrast, we anticipate that beginning with a detector with high energy resolution, e.g., high-purity germanium (HPGe), and adapting the data acquisition for high throughput will be able to achieve the goals of the ideal detector. In this work, we present quantification of Cs-134 and Cs-137 activities, useful for fuel burn-up quantification, in fuel that has been cooling for 22.3 years. A segmented, planar HPGe detector is used for this inspection, which has been adapted for a high-rate throughput in excess of 500k counts/s. Using a very-high-statistic spectrum of 2.4*10^11 counts, isotope activities can be determined with very low statistical uncertainty. However, it is determined that systematic uncertainties dominate in such a data set, e.g., the uncertainty in the pulse line shape. This spectrum offers a unique opportunity to quantify this uncertainty and subsequently determine required counting times for given precision on values of interest.

  1. Optimization of the Transport Shield for Neutrinoless Double Beta-decay Enriched Germanium

    Aguayo Navarrete, Estanislao; Kouzes, Richard T.; Orrell, John L.; Reid, Douglas J.; Fast, James E.

    2012-04-15

    This document presents results of an investigation of the material and geometry choice for the transport shield of germanium, the active detector material used in 76Ge neutrinoless double beta decay searches. The objective of this work is to select the optimal material and geometry to minimize cosmogenic production of radioactive isotopes in the germanium material. The design of such a shield is based on the calculation of the cosmogenic production rate of isotopes that are known to cause interfering backgrounds in 76Ge neutrinoless double beta decay searches.

  2. Atomic ionization of germanium by neutrinos from an ab initio approach

    Chen, Jiunn-Wei [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); National Center for Theoretical Sciences and Leung Center for Cosmology and Particle Astrophysics, National Taiwan University, Taipei 10617, Taiwan (China); Chi, Hsin-Chang [Department of Physics, National Dong Hwa University, Shoufeng, Hualien 97401, Taiwan (China); Huang, Keh-Ning [Department of Physics, Sichuan University, Chengdu, Sichuan (China); Department of Physics, Fuzhou University, Fuzhou, Fujian (China); Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C.-P. [Department of Physics, National Dong Hwa University, Shoufeng, Hualien 97401, Taiwan (China); Shiao, Hao-Tse [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Singh, Lakhwinder [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Physics, Banaras Hindu University, Varanasi 221005 (India); Wong, Henry T. [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Wu, Chih-Liang; Wu, Chih-Pan [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)

    2014-04-04

    An ab initio calculation of atomic ionization of germanium by neutrinos was carried out in the framework of multiconfiguration relativistic random phase approximation and benchmarked by related atomic structure and photoabsorption data. This improves over the conventional approach based on scattering off free electrons whose validity at sub-keV energy transfer is questionable. Limits on neutrino magnetic moments are derived using reactor neutrino data taken with low threshold germanium detectors. Future applications of these atomic techniques will greatly reduce the atomic uncertainties in low-energy neutrino and dark matter detections.

  3. Temperature-dependent hyperfine interactions at {sup 111}Cd-C complex in germanium

    Mola, Genene Tessema [University of Kwazulu-Natal, School Chemistry and Physics, Pietermaritzburg Campus, Private Bag X01, Scottsville (South Africa)

    2013-09-15

    The temperature dependent nuclear hyperfine interaction of {sup 111}Cd-carbon complex in germanium has been studied using the perturbed {gamma}-{gamma} angular correlation (PAC) method. The parameters of the hyperfine interaction representing substitutional carbon-cadmium complex in germanium ({nu} {sub Q1}=207(1) MHz ({eta}=0.16)) shows dependence on temperature. The formation and thermal stability of the complex has been reported by the same author earlier. It was found in this study that the quadrupole coupling constant of the interaction increases at sample temperature below 293 K. The results are encouraging toward better understanding of the complex in the host matrix. (orig.)

  4. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

    Haller, Eugene E.; Brundermann, Erik

    2000-01-01

    A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

  5. GIOVE - A New Detector Setup for High Sensitivity Germanium Spectroscopy At Shallow Depth

    Heusser, Gerd; Hakenmüller, Janina; Laubenstein, Matthias; Lindner, Manfred; Maneschg, Werner; Simgen, Hardy; Stolzenburg, Dominik; Strecker, Herbert

    2015-01-01

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer Veto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut f\\"ur Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of <100 {\\mu}Bq/kg for primordial radionuclides from U and Th in typical {\\gamma} ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites.

  6. GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

    Heusser, G.; Weber, M.; Hakenmueller, J.; Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H. [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Laubenstein, M. [Laboratori Nazionali del Gran Sasso, Assergi (Italy)

    2015-11-15

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut fuer Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤ 100μBq kg{sup -1} for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites. (orig.)

  7. Global Arrays

    Krishnamoorthy, Sriram; Daily, Jeffrey A.; Vishnu, Abhinav; Palmer, Bruce J.

    2015-11-01

    Global Arrays (GA) is a distributed-memory programming model that allows for shared-memory-style programming combined with one-sided communication, to create a set of tools that combine high performance with ease-of-use. GA exposes a relatively straightforward programming abstraction, while supporting fully-distributed data structures, locality of reference, and high-performance communication. GA was originally formulated in the early 1990’s to provide a communication layer for the Northwest Chemistry (NWChem) suite of chemistry modeling codes that was being developed concurrently.

  8. High bit rate germanium single photon detectors for 1310nm

    Seamons, J. A.; Carroll, M. S.

    2008-04-01

    There is increasing interest in development of high speed, low noise and readily fieldable near infrared (NIR) single photon detectors. InGaAs/InP Avalanche photodiodes (APD) operated in Geiger mode (GM) are a leading choice for NIR due to their preeminence in optical networking. After-pulsing is, however, a primary challenge to operating InGaAs/InP single photon detectors at high frequencies1. After-pulsing is the effect of charge being released from traps that trigger false ("dark") counts. To overcome this problem, hold-off times between detection windows are used to allow the traps to discharge to suppress after-pulsing. The hold-off time represents, however, an upper limit on detection frequency that shows degradation beginning at frequencies of ~100 kHz in InGaAs/InP. Alternatively, germanium (Ge) single photon avalanche photodiodes (SPAD) have been reported to have more than an order of magnitude smaller charge trap densities than InGaAs/InP SPADs2, which allowed them to be successfully operated with passive quenching2 (i.e., no gated hold off times necessary), which is not possible with InGaAs/InP SPADs, indicating a much weaker dark count dependence on hold-off time consistent with fewer charge traps. Despite these encouraging results suggesting a possible higher operating frequency limit for Ge SPADs, little has been reported on Ge SPAD performance at high frequencies presumably because previous work with Ge SPADs has been discouraged by a strong demand to work at 1550 nm. NIR SPADs require cooling, which in the case of Ge SPADs dramatically reduces the quantum efficiency of the Ge at 1550 nm. Recently, however, advantages to working at 1310 nm have been suggested which combined with a need to increase quantum bit rates for quantum key distribution (QKD) motivates examination of Ge detectors performance at very high detection rates where InGaAs/InP does not perform as well. Presented in this paper are measurements of a commercially available Ge APD

  9. Germanium and Rare Earth Element accumulation in woody bioenergy crops

    Hentschel, Werner

    2016-04-01

    Germanium and REEs are strategic elements that are used for high tech devices and engineered systems, however these elements are hardly concentrated into mineable ore deposits. Since these elements occur widely dispersed in the earth crust with concentrations of several mgṡkg-1 (Ge 1.6 mgṡkg-1, Nd 25 mgṡkg-1) a new possibility to gain these elements could be phytomining, a technique that uses plants to extract elements from soils via their roots. Since knowledge about accumulating plant species is quite limited we conducted research on the concentrations of strategic elements in wood and leaves of fast growing tree species (Salix spec., Populus spec., Betula pendula, Alnus glutinosa, Fraxinus excelsior, Acer pseudoplatanus). In total 35 study sites were selected in the mining affected area around Freiberg (Saxony, Germany), differing in their species composition and degree of contamination with toxic trace metals (Pb, As, Cd). On each site plant tissues (wood and leaves, respectively) of different species were sampled. In addition soil samples were taken from a soil depth of 0 - 30 cm and 30 - 60 cm. The aim of our work was to investigate correlations between the concentrations of the target elements in plant tissues and soil characteristics like pH, texture, nutrients and concentrations in six operationally defined soil fractions (mobile, acid soluble, oxidizable, amorphic oxides, crystalline oxides, residual or siliceous). Concentrations of elements in soil extracts and plant tissues were measured with ICP-MS. The element Nd was selected as representative for the group of REEs, since this element showed a high correlation with the concentrations of the other REE We found that the concentration of Nd in the leaves (0.31 mgṡkg-1Nd) were several times higher than in herbaceous species (0.05 mgṡkg-1 Nd). The concentration of Ge in leaves were ten times lower than that of Nd whereas in herbaceous species Nd and Ge were in equal magnitude. Within the tree

  10. Quantum devices in silicon/silicon germanium heterostructures

    Slinker, Keith A.

    This thesis presents the fabrication and characterization of silicon/silicon-germanium quantum wells, quantum dots, and quantum point contacts. These systems are promising for quantum computing applications due to the long predicted spin lifetimes. In addition, the valley states in Si/SiGe two-dimensional electron gases (2DEGs) are a novel phenomenon in regards to nanostructures, and characterizing these states is also necessary for potential computing applications. However, working with these heterostructures---especially in regards to metal Schottky gating---has proved historically challenging such that single electron transistors had not been achieved at the onset of this research. The first quantum dots in Si/SiGe are presented, defined completely by CF4 reactive ion etch without the use of metal gates. Etch-defined 2DEG side gates are used to modulate the potential of the quantum dot. Results for various metal gating schemes are also presented, culminating in the first Schottky-gated quantum dots in Si/SiGe. Differing from the etch-defined dots, the tunnel junctions of the metal-etch hybrid dot are fully tunable by the voltage applied to the top gates. Hall measurements of multiple heterostructures are presented, providing evidence that many of the challenges associated with gating Si/SiGe can be attributed to undepleted dopants in the supply layer. These dopants screen the top gates but can be detected as a parallel conduction channel in Hall measurements taken at a 2 K. A fully top-gate defined quantum dot was fabricated on an optimized Si/SiGe heterostructure, and the single particle excited states were resolved for the first time in Si/SiGe. Finally, quantum point contacts were defined by metal top gates, and the conduction was mapped out over a large range of magnetic field and voltages on the gates. The positions of the conductance steps are used to extract the valley splitting---a quantity that had been measured in a bulk 2DEG but not in a nanostructure

  11. Application of vacuum reduction and chlorinated distillation to enrich and prepare pure germanium from coal fly ash.

    Zhang, Lingen; Xu, Zhenming

    2017-01-05

    Germanium, as strategic reserve metal, plays critical role in high-tech industry. However, a contradiction of increasing consumption and scarcity of germanium resource is becoming more and more prominent. This paper proposed an integrated process to recycle germanium from coal fly ash. This technological process mainly consisted of two procedures: vacuum reduction with the purposes of enriching germanium and chlorinated distillation with the purposes of purifying germanium. Several highlights are summarized as follows: (i) Separation principle and reaction mechanism were discussed to understand this integrated process. (ii) Optimum designs and product analysis were developed to guide industrial recycling. The appropriate parameters for vacuum reduction process on the basis of response surface methodology (RSM) were 920.53°C and 259.63Pa, with 16.64wt.% reductant, and for the chlorinated distillation process, adding 8mol/l HCl and L/S 7, 8wt.% MnO2. The global recovery rate of germanium was 83.48±0.36% for the integrated process. (iii) This process overcomes the shortages of traditional process and shows its efficiency and environmental performance. It is significant in accordance with the "Reduce, Reuse and Recycle Principle" for solid waste and further provides a new opportunity for germanium recovery from waste by environment-friendly way.

  12. Dark Matter Search with sub-keV Germanium Detectors at the China Jinping Underground Laboratory

    Yue, Qian

    2012-01-01

    Germanium detectors with sub-keV sensitivities open a window to search for low-mass WIMP dark matter. The CDEX-TEXONO Collaboration is conducting the first research program at the new China Jinping Underground Laboratory with this approach. The status and plans of the laboratory and the experiment are discussed.

  13. Determination of Shear Deformation Potentials from the Free-Carrier Piezobirefringence in Germanium and Silicon

    Riskaer, Sven

    1966-01-01

    The present investigations of the free-carrier piezobirefringence phenomenon verify that in n-type germanium and silicon as well as in p-type silicon this effect can be ascribed to intraband transitions of the carriers. It is demonstrated how a combined investigation of the low-stress and high-st...

  14. A facility for plastic deformation of germanium single-crystal wafers

    Lebech, B.; Theodor, K.; Breiting, B.

    1998-01-01

    A facility for plastic deformation of single-crystal germanium wafers is described. It consists of a commercial tube furnace which radiates heat to evacuated quartz-glass tubes housing the tools for bending and flattening of the wafers. The facility is semi-automatic and requires minimal attention...... Science B.V. All rights reserved....

  15. Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

    Hellings, G.; Rosseel, E.; Simoen, E.;

    2011-01-01

    Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3...

  16. Fabrication and performance of intrinsic germanium photodiodes. [for atmospheric IR spectroscopy

    Beiting, E. J., III; Feldman, P. D.

    1977-01-01

    The paper presents fabrication details for an intrinsic germanium photodiode developed for study of atmospheric constituents, the airglow and auroras in the 1-2 micron spectral range. Attention is given to cutting of the single crystal, spreading of the lithium dispersion, sputtering of a gold coating, and surface passivation. A wavelength response curve is presented.

  17. Luminescence decay dynamics of self-assembled germanium islands in silicon

    Julsgaard, Brian; Balling, Peter; Hansen, John Lundsgaard;

    2011-01-01

    The dynamics of the luminescence decay from self-assembled germanium islands embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. We separate the time scale for various dynamical processes by time-resolved emission spectroscopy and identify a...

  18. Germanium recovery from gasification fly ash: evaluation of end-products obtained by precipitation methods.

    Arroyo, Fátima; Font, Oriol; Fernández-Pereira, Constantino; Querol, Xavier; Juan, Roberto; Ruiz, Carmen; Coca, Pilar

    2009-08-15

    In this study the purity of the germanium end-products obtained by two different precipitation methods carried out on germanium-bearing solutions was evaluated as a last step of a hydrometallurgy process for the recovery of this valuable element from the Puertollano Integrated Gasification Combined Cycle (IGCC) fly ash. Since H(2)S is produced as a by-product in the gas cleaning system of the Puertollano IGCC plant, precipitation of germanium as GeS(2) was tested by sulfiding the Ge-bearing solutions. The technological and hazardous issues that surround H(2)S handling conducted to investigate a novel precipitation procedure: precipitation as an organic complex by adding 1,2-dihydroxy benzene pyrocatechol (CAT) and cetyltrimethylammonium bromide (CTAB) to the Ge-bearing solutions. Relatively high purity Ge end-products (90 and 93% hexagonal-GeO(2) purity, respectively) were obtained by precipitating Ge from enriched solutions, as GeS(2) sulfiding the solutions with H(2)S, or as organic complex with CAT/CTAB mixtures and subsequent roasting of the precipitates. Both methods showed high efficiency (>99%) to precipitate selectively Ge using a single precipitation stage from germanium-bearing solutions.

  19. Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon

    LIN Li-Xia; CHEN Jia-He; WU Peng; ZENG Yu-Heng; MA Xiang-Yang; YANG De-Ren

    2011-01-01

    The formation of a denuded zone(DZ) by conventional furnace annealing(CFA) and rapid thermal annealing (RTA) based denudation processing is investigated and the gettering of copper(Cu) atoms in germanium co-doped heavily phosphorus-doped Czochralski(GHPCZ)silicon wafers is evaluated. It is suggested that both a good quality defect-free DZ with a suitable width in the sub-surface area and a high density bulk micro-defect(BMD)region could be formed in heavily phosphorus-doped Czochralski(HPCZ)silicon and GHPCZ silicon wafers.This is ascribed to the formation of phosphorus-vacancy(P-V) related complexes and germanium-vacancy(GeV) related complexes. Compared with HPCZ silicon, the DZ width is wider in the GHPCZ silicon sample with CFA-based denudation processing but narrower in the one with two-step RTA pretreatments. These phenomena are ascribed to the enhancing effect of germanium on oxygen out-diffusion movement and oxygen precipitate nucleation, respectively. Furthermore, fairly clean DZs near the surface remain in both the HPCZ and GHPCZ silicon wafers after Cu in-diffusion, except for the HPCZ silicon wafer which underwent denudation processing with a CFA pretreatment, suggesting that germanium doping could improve the gettering of Cu contamination.

  20. Design and optimisation of suspended strained germanium membranes for near-infrared lasing (Conference Presentation)

    Burt, Daniel; Aldeek, Waseem; Aldaghri, Osamah A.; Ikonic, Zoran; Querin, Oswaldo M.; Kelsall, Robert W.

    2016-05-01

    The development of a semiconductor laser compatible with silicon substrates and high-volume silicon integrated circuit manufacturing is a key requirement for monolithic silicon photonic transceivers. Tensile strained germanium is a promising material system which meets these criteria, and both optically pumped and electrically injected lasing have been reported[1,2]. It is well established that growth of thick (~1 micron) layers of germanium on silicon substrates by two-stage chemical vapour deposition followed by thermal annealing results in nearly-relaxed germanium with a residual biaxial tensile strain of typically 0.15-0.25% [3]. Several researchers have investigated methods of amplifying this built-in strain in order to increase the attainable optical gain. Increased uniaxial strain levels have been demonstrated in suspended linear bridge structures created by wet chemical underetching. However, uniaxial strain is less effective than biaxial strain in converting germanium from an indirect to a direct gap semiconductor and hence generating substantial optical gain. In this work, we have computationally investigated and optimised two-dimensional patterning and under-etching of germanium membranes in order to achieve biaxial strain amplification. Strain simulations were carried out using finite element methods and the shape of the suspended germanium structures was optimised to achieve the highest tensile strain whilst remaining below the empirically determined yield strength of the thin membranes. The net optical gain distribution across the membrane was calculated using 8 band k.p bandstructure to determine the full interband gain, the inter-valence-band absorption and the intervalley and intravalley phonon- and impurity-assisted free carrier absorption. Band-gap narrowing effects were included using empirical data. Biaxial strain values of ~1% can be achieved in the lasing region of the structure, which, although below the level required to convert germanium

  1. Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium

    Han De-Dong; Kang Jin-Feng; Liu Xiao-Yan; Sun Lei; Luo Hao; Han Ru-Qi

    2007-01-01

    This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated.Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.

  2. Aerosol assisted chemical vapour deposition of germanium thin films using organogermanium carboxylates as precursors and formation of germania films

    Alpa Y Shah; Amey Wadawale; Vijaykumar S Sagoria; Vimal K Jain; C A Betty; S Bhattacharya

    2012-06-01

    Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)2], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700°C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600°C yield GeO2. Both Ge and GeO2 films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (–) characterization.

  3. Rare earth elements in germanium-bearing coal seams of the Spetsugli deposit (Primor'e Region, Russia)

    Seredin, V.V. [Russian Academy of Science, Moscow (Russian Federation)

    2005-06-01

    The paper presents first data on contents of lanthanoids and yttrium in germanium-bearing beds of the Spetsugli deposit, which vary along sampled cross sections from 86 to 316 ppm. It is shown that germanium-bearing coals are strongly enriched in yttrium and heavy lanthanoids as compared with coals located beyond the zone of germanium mineralization and with germanium-bearing coals of the Lincang deposit (South China). Vertical and lateral variations in REE concentrations and in REE patterns in germanium-bearing beds located at different hypsometric levels and different distances from supposed feeding channels of germanium-bearing solutions are considered. The REE distributions through beds show no correlation between REE and Ge contents. This is explained by diverse REE sources (granites of the basement and hydrothermal solutions of two generations) and by the different age of their accumulations in beds of the Spetsugli deposit. Reconstruction of the initial REE composition in germanium-bearing solutions circulating through coal-bearing formations during the Miocene at the stage of organic matter diagenesis shows that they were characterized by low concentrations of these elements and were relatively enriched in Eu and HREE. Anomalously high REE contents established in germanium-bearing coals are of epigenetic origin and accumulated after the formation of Ge mineralization. They were deposited by metalliferous REE-enriched and Ge-free or Ge-poor solutions of volcanic origin that circulated during the Pliocene-Early Quaternary time. In this regard, the Spetsugli deposit differs notably from the Lincang Ge-bearing coal deposit (South China), where the late epigenetic ore-formation stage probably did not take place.

  4. Dramatic Changes in Thermoelectric Power of Germanium under Pressure: Printing n–p Junctions by Applied Stress

    Korobeinikov, Igor V.; Morozova, Natalia V.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V.

    2017-03-01

    Controlled tuning the electrical, optical, magnetic, mechanical and other characteristics of the leading semiconducting materials is one of the primary technological challenges. Here, we demonstrate that the electronic transport properties of conventional single-crystalline wafers of germanium may be dramatically tuned by application of moderate pressures. We investigated the thermoelectric power (Seebeck coefficient) of p– and n–type germanium under high pressure to 20 GPa. We established that an applied pressure of several GPa drastically shifts the electrical conduction to p–type. The p–type conduction is conserved across the semiconductor-metal phase transition at near 10 GPa. Upon pressure releasing, germanium transformed to a metastable st12 phase (Ge-III) with n–type semiconducting conductivity. We proposed that the unusual electronic properties of germanium in the original cubic-diamond-structured phase could result from a splitting of the “heavy” and “light” holes bands, and a related charge transfer between them. We suggested new innovative applications of germanium, e.g., in technologies of printing of n–p and n–p–n junctions by applied stress. Thus, our work has uncovered a new face of germanium as a ‘smart’ material.

  5. 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

    Gassenq, A.; Guilloy, K.; Osvaldo Dias, G.; Pauc, N.; Rouchon, D.; Hartmann, J.-M.; Widiez, J.; Tardif, S.; Rieutord, F.; Escalante, J.; Duchemin, I.; Niquet, Y.-M.; Geiger, R.; Zabel, T.; Sigg, H.; Faist, J.; Chelnokov, A.; Reboud, V.; Calvo, V.

    2015-11-01

    High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific Germanium-On-Insulator 200 mm wafer to improve tolerance to high strains induced via shaping of the Ge layers into micro-bridges. Building on the high crystalline quality, we demonstrate bi-axial tensile strain of 1.9%, which is currently the highest reported value measured in thick (350 nm) Ge layer. Since this strain is generally considered as the onset of the direct bandgap in Ge, our realization paves the way towards mid-infrared lasers fully compatible with CMOS fab technology.

  6. The impact of radiation on semiconducting characteristics of monocrystalline silicon and germanium

    Obrenović Marija D.

    2016-01-01

    Full Text Available The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and g-radiation. Change of the samples' specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation. [Projekat Ministarstva nauke Republike Srbije, br. 171007

  7. Schottky contacts in germanium nanowire network devices synthesized from nickel seeds

    Gouveia, R. C.; Rodrigues, A. D.; Leite, E. R.; Chiquito, A. J.

    2016-10-01

    This paper presents reliable process to the synthesis of germanium nanowires by the vapor-liquid-solid method using nickel as an alternative catalyst to gold, the most commonly used metal, without toxic gas precursors. The structural study showed single-crystalline germanium nanowires with diamond structure, lengths of tens of microns and diameters smaller than 40 nm. The reduced dimensions of the nanowires led to phonons localization effect, with correlation lengths of the same order of the nanowires diameters. Additionally, the analysis of electronic properties of metal-nanowire-metal devices indicated the presence of Schottky barriers, whose values depend linearly on temperature. This linear dependence was assigned to the tunneling process through an insulator layer (mostly GeOx) at the metal-semiconductor interface. These results point to the existence of another channel for electrons transference from metal to semiconductor being very significant to electronic devices fabrication.

  8. Silicon and germanium nanoparticles with tailored surface chemistry as novel inorganic fiber brightening agents.

    Deb-Choudhury, Santanu; Prabakar, Sujay; Krsinic, Gail; Dyer, Jolon M; Tilley, Richard D

    2013-07-31

    Low-molecular-weight organic molecules, such as coumarins and stilbenes, are used commercially as fluorescent whitening agents (FWAs) to mask photoyellowing and to brighten colors in fabrics. FWAs achieve this by radiating extra blue light, thus changing the hue and also adding to the brightness. However, organic FWAs can rapidly photodegrade in the presence of ultraviolet (UV) radiation, exacerbating the yellowing process through a reaction involving singlet oxygen species. Inorganic nanoparticles, on the other hand, can provide a similar brightening effect with the added advantage of photostability. We report a targeted approach in designing new inorganic silicon- and germanium-based nanoparticles, functionalized with hydrophilic (amine) surface terminations as novel inorganic FWAs. When applied on wool, by incorporation in a sol-gel Si matrix, the inorganic FWAs improved brightness properties, demonstrated enhanced photostability toward UV radiation, especially the germanium nanoparticles, and also generated considerably lower levels of reactive oxygen species compared to a commercial stilbene-based organic FWA, Uvitex NFW.

  9. Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium

    Dominici, Stefano; Wen, Hanqing; Bertazzi, Francesco; Goano, Michele; Bellotti, Enrico

    2016-05-01

    The potential applications of germanium and its alloys in infrared silicon-based photonics have led to a renewed interest in their optical properties. In this letter, we report on the numerical determination of Auger coefficients at T = 300 K for relaxed and biaxially strained germanium. We use a Green's function based model that takes into account all relevant direct and phonon-assisted processes and perform calculations up to a strain level corresponding to the transition from indirect to direct energy gap. We have considered excess carrier concentrations ranging from 1016 cm-3 to 5 × 1019 cm-3. For use in device level simulations, we also provide fitting formulas for the calculated electron and hole Auger coefficients as functions of carrier density.

  10. Cosmogenic activation of Germanium and its reduction for low background experiments

    Barabanov, I; Bezrukov, L; Denisov, A; Kornoukhov, V; Sobolevsky, N

    2006-01-01

    Production of $^{60}$Co and $^{68}$Ge from stable isotopes of Germanium by nuclear active component of cosmic rays is a principal background source for a new generation of $^{76}$Ge double beta decay experiments like GERDA and Majorana. The biggest amount of cosmogenic activity is expected to be produced during transportation of either enriched material or already grown crystal. In this letter properties and feasibility of a movable iron shield are discussed. Activation reduction factor of about 10 is predicted by simulations with SHIELD code for a simple cylindrical configuration. It is sufficient for GERDA Phase II background requirements. Possibility of further increase of reduction factor and physical limitations are considered. Importance of activation reduction during Germanium purification and detector manufacturing is emphasized.

  11. A Low-Noise Germanium Ionization Spectrometer for Low-Background Science

    Aalseth, Craig E.; Colaresi, Jim; Collar, Juan I.; Fast, James E.; Hossbach, Todd W.; Orrell, John L.; Overman, Cory T.; Scholz, Bjorn; Vandevender, Brent A.; Yocum, K. Michael

    2016-12-01

    Recent progress on the development of very low energy threshold high purity germanium ionization spectrometers has produced an instrument of 1.2 kg mass and excellent noise performance. The detector was installed in a low-background cryostat intended for use in a low mass, WIMP dark matter direct detection search. The integrated detector and low background cryostat achieved noise performance of 98 eV full-width half-maximum of an input electronic pulse generator peak and gamma-ray energy resolution of 1.9 keV full-width half-maximum at the 60Co gamma-ray energy of 1332 keV. This Transaction reports the thermal characterization of the low-background cryostat, specifications of the newly prepared 1.2 kg p-type point contact germanium detector, and the ionization spectroscopy – energy resolution and energy threshold – performance of the integrated system.

  12. Catalytic conversion of carbohydrates into 5-hydroxymethylfurfural by germanium(IV) chloride in ionic liquids.

    Zhang, Zehui; Wang, Qian; Xie, Haibo; Liu, Wujun; Zhao, Zongbao Kent

    2011-01-17

    Direct conversion of carbohydrates into 5-hydroxymethylfurfural (HMF) catalyzed by germanium(IV) chloride in ionic liquids has been investigated in search of an efficient and environmentally friendly process. Monosaccharides D-fructose and D-glucose, disaccharides sucrose and maltose, and even the polysaccharide cellulose were successfully converted into HMF with good yields under mild conditions (yield up to 92 % in 5 min in the case of fructose). The structure of ionic liquids, catalyst loading, reaction temperature and water content had noticeable effects on this catalytic system. Addition of 5 Å molecular sieves during the dehydration of glucose resulted in an increase in HMF yield from 38.4 % to 48.4 %. A mechanism for glucose conversion to HMF catalyzed by germanium(IV) chloride was proposed according to ¹³C NMR spectra obtained in situ under different conditions using D-glucose-2-¹³C as the substrate.

  13. Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

    Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

    2015-05-01

    Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

  14. Volume reflection and channeling of ultrarelativistic protons in germanium bent single crystals

    Bellucci, S

    2016-01-01

    The paper devoted to investigation of volume reflection and channeling processes of ultrarela- tivistic positive charged particles moving in germanium single crystals. We demonstrate that the choice of atomic potential on the basis of Hartree-Fock method and correct choice of Debye tem- perature allow us to describe the above mentioned processes in a good agreement with the recent experiments. Moreover, the presented in the paper universal form of equations for volume reflection gives true description of the process at a wide range of particle energies. Standing on this study we make predictions for mean angle reflection (as a function of bending radius) of positive and negative particles for germanium (110) and (111) crystallographic planes.

  15. Modelling the structure factors and pair distribution functions of amorphous germanium, silicon and carbon

    Dalgic, Seyfettin; Gonzalez, Luis Enrique; Baer, Shalom; Silbert, Moises

    2002-12-01

    We present the results of calculations of the static structure factor S(k) and the pair distribution function g(r) of the tetrahedral amorphous semiconductors germanium, silicon and carbon using the structural diffusion model (SDM). The results obtained with the SDM for S(k) and g(r) are of comparable quality with those obtained by the unconstrained Reverse Monte Carlo simulations and existing ab initio molecular dynamics simulations for these systems. We have found that g(r) exhibits a small peak, or shoulder, a weak remnant of the prominent third neighbour peak present in the crystalline phase of these systems. This feature has been experimentally found to be present in recently reported high energy X-ray experiments of amorphous silicon (Phys. Rev. B 60 (1999) 13520), as well as in the previous X-ray diffraction of as-evaporated amorphous germanium (Phys. Rev. B 50 (1994) 539)

  16. GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

    Heusser, G., E-mail: gerd.heusser@mpi-hd.mpg.de; Weber, M., E-mail: marc.weber@mpi-hd.mpg.de; Hakenmüller, J. [Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, 69117, Heidelberg (Germany); Laubenstein, M. [Laboratori Nazionali del Gran Sasso, Via G. Acitelli 22, 67100, Assergi, AQ (Italy); Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H. [Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, 69117, Heidelberg (Germany)

    2015-11-09

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut für Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤100 μBq kg{sup -1} for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites.

  17. Analog Readout and Analysis Software for the Ultra-High Rate Germanium (UHRGe) Project

    Fast, James E.; Aguayo Navarrete, Estanislao; Evans, Allan T.; VanDevender, Brent A.; Rodriguez, Douglas C.; Wood, Lynn S.

    2011-09-01

    High-resolution high-purity germanium (HPGe) spectrometers are needed for Safeguards applications such as spent fuel assay and uranium hexafluoride cylinder verification. In addition, these spectrometers would be applicable to other high-rate applications such as non-destructive assay of nuclear materials using nuclear resonance fluorescence. Count-rate limitations of today's HPGe technologies, however, lead to concessions in their use and reduction in their efficacy. Large-volume, very high-rate HPGe spectrometers are needed to enable a new generation of nondestructive assay systems. The Ultra-High Rate Germanium (UHRGe) project is developing HPGe spectrometer systems capable of operating at unprecedented rates, 10 to 100 times those available today. This report documents current status of developments in the analog electronics and analysis software.

  18. Graphical Environment Tools for Application to Gamma-Ray Energy Tracking Arrays

    Todd, Richard A. [RIS Corp.; Radford, David C. [ORNL Physics Div.

    2013-12-30

    Highly segmented, position-sensitive germanium detector systems are being developed for nuclear physics research where traditional electronic signal processing with mixed analog and digital function blocks would be enormously complex and costly. Future systems will be constructed using pipelined processing of high-speed digitized signals as is done in the telecommunications industry. Techniques which provide rapid algorithm and system development for future systems are desirable. This project has used digital signal processing concepts and existing graphical system design tools to develop a set of re-usable modular functions and libraries targeted for the nuclear physics community. Researchers working with complex nuclear detector arrays such as the Gamma-Ray Energy Tracking Array (GRETA) have been able to construct advanced data processing algorithms for implementation in field programmable gate arrays (FPGAs) through application of these library functions using intuitive graphical interfaces.

  19. Coupling in reflector arrays

    Appel-Hansen, Jørgen

    1968-01-01

    In order to reduce the space occupied by a reflector array, it is desirable to arrange the array antennas as close to each other as possible; however, in this case coupling between the array antennas will reduce the reflecting properties of the reflector array. The purpose of the present communic...

  20. Neutrino and dark matter physics with sub-keV germanium detectors

    Arun Kumar Soma; Lakhwinder Singh; Manoj Kumar Singh; Venktesh Singh; Henry T Wong; on behalf of the TEXONO Collaboration

    2014-11-01

    Germanium detectors with sub-keV sensitivities open a window to study neutrino physics to search for light weakly interacting massive particle (WIMP) dark matter. We summarize the recent results on spin-independent couplings of light WIMPs from the TEXONO experiment at the Kuo-Sheng Reactor Neutrino Laboratory. Highlights of the physics motivation, our R&D programme, as well as the status and plans are presented.

  1. Development of a one-dimensional microstrip germanium detector for Compton scattering experiment at SPring-8

    Toyokawa, H; Mizumaki, M; Sakurai, Y; Suzuki, M; Hiraoka, N; Sakai, N

    2001-01-01

    Two prototypes of a one-dimensional microstrip germanium detector were fabricated with seven strips, having different pitches of 200 and 350 mu m. Owing to its insensitivity to hole-diffusion process, the latter one has attained a spatial resolution as high as 350 mu m, an energy resolution better than 1.4%, and a peak efficiency around 50% at an X-ray energy of 80 keV.

  2. Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium

    Balslev, I.

    1966-01-01

    The indirect optical absorption edge in silicon and germanium has been studied in the presence of shear strain. The splitting observed in the transmission spectrum is dependent on the direction and magnitude of the applied stress and on the polarization of the light with respect to the stress axi...... with uniaxial stress. A special experimental technique using a vibrating slit in the spectrometer was used in order to obtain an accurate determination of the fine structure in the absorption spectrum....

  3. Enhancement of electromagnetic showers initiated by ultrarelativistic electrons in aligned thick germanium crystals

    Baurichter, A.; Mikkelsen, U.; Kirsebom, K.; Medenwaldt, R.; Møller, S.; Uggerhøj, E.; Worm, T.; Elsener, K.; Ballestrero, S.; Sona, P.; Romano, J.; Biino, C.; Moore, R.; Vilakazi, Z. Z.

    1996-10-01

    The distribution of the energy deposited in thin silicon detectors placed on the downstream side of a thick germanium single crystal bombarded with a 70, 150 and 250 GeV electron beam along directions close to the axis or {110} and {100} planes has been measured. The enhancement of the shower with respect to random incidence, as reflected in the higher value of the centroid of the distribution, is studied as a function of the incidence angle to the axis or plane.

  4. Enhanced nonlinearity in photonic crystal fiber by germanium doping in the core region

    Tingting Sun; Guiyun Kai; Zhi Wang; Shuzhong Yuan; Xiaoyi Dong

    2008-01-01

    Germanium doping in silica can be used as a method for nonlinearity enhancement.Properties of the enhanced nonlinearity in photonic crystal fiber(PCF)with a GeO2-doped core are investigated theoretically by using all-vector finite element method.Numerical result shows that the nonlinear coefficient of PCF is greatly enhanced with increasing doping concentration,furthermore,optimal radius of the doped region should be considered for the desired operating wavelength.

  5. A model for the effects of germanium on silica biomineralization in choanoflagellates

    Marron, Alan O.; Chappell, Helen; Ratcliffe, Sarah; Goldstein, Raymond E.

    2016-01-01

    This is the final version of the article. It first appeared from Royal Society Publishing via http://dx.doi.org/10.1098/rsif.2016.0485 Silica biomineralization is a widespread phenomenon of major biotechnological interest. Modifying biosilica with substances like germanium (Ge) can confer useful new properties, although exposure to high levels of Ge disrupts normal biosilicification. No clear mechanism explains why this disruption occurs. Here, we study the effect of Ge on loricate choanof...

  6. Fibroblastic activities post implantation of cobalt chromium alloy and pure germanium in rabbits.

    Carter, J M; Natiella, J R; Baier, R E; Natiella, R R

    1984-02-01

    Different preimplantation surface finishes were applied to surgical vitallium discs and germanium prisms implanted for 20 days within the back muscles of adult rabbits. Histopathologic analysis of the numbers of nuclei of active fibroblasts immediately adjacent to the implants was carried out. The mean apparent volume fractions (MAVF) for the subdermal implant sites were found to depend on the surface cleanliness of the implant, the cleanest or highest-surface-energy surfaces giving the highest MAVF values for active fibroblasts.

  7. Pure germanium dioxide hollow-core fiber for transmitting CO2 laser

    侯兰田; 付连符; 吕平; 韩玉华; 李秋更; 徐立宣; 李天柱

    1995-01-01

    A method of fabricating pure germanium dioxide hollow-core fibers has been introduced for the first time. The output power of the fabricated fiber can come to 18 W, with the transmission loss of 1.23 dB/m at 10.6 μm. The mechanism of transmitting CO2 laser by the fiber is analyzed, the transmitting loss is further discussed and its application fields are envisaged.

  8. Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

    Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovanni; Sakat, Emilie; Pellegrini, Giovanni; Biagioni, Paolo; Bollani, Monica; Napolitani, Enrico; Manganelli, Costanza; Virgilio, Michele; Grupp, Alexander; Fischer, Marco P.; Brida, Daniele; Gallacher, Kevin; Paul, Douglas J.; Baldassarre, Leonetta; Calvani, Paolo; Giliberti, Valeria; Nucara, Alessandro; Ortolani, Michele

    2016-08-01

    Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in the 5 to 50 μ m wavelength range at least. In this work, we investigate the electrodynamics of heavily n -type-doped germanium epilayers at infrared frequencies beyond the assumptions of the Drude model. The films are grown on silicon and germanium substrates, are in situ doped with phosphorous in the 1017 to 1019 cm-3 range, then screened plasma frequencies in the 100 to 1200 cm-1 range were observed. We employ infrared spectroscopy, pump-probe spectroscopy, and dc transport measurements to determine the tunability of the plasma frequency. Although no plasmonic structures have been realized in this work, we derive estimates of the decay time of mid-infrared plasmons and of their figures of merit for field confinement and for surface plasmon propagation. The average electron scattering rate increases almost linearly with excitation frequency, in agreement with quantum calculations based on a model of the ellipsoidal Fermi surface at the conduction band minimum of germanium accounting for electron scattering with optical phonons and charged impurities. Instead, we found weak dependence of plasmon losses on neutral impurity density. In films where a transient plasma was generated by optical pumping, we found significant dependence of the energy relaxation times in the few-picosecond range on the static doping level of the film, confirming the key but indirect role played by charged impurities in energy relaxation. Our results indicate that underdamped mid-infrared plasma oscillations are attained in n -type-doped germanium at room temperature.

  9. Doping of germanium by ion-implantation and laser annealing in the melting regime

    Milazzo, Ruggero

    2015-01-01

    Germanium is the main candidate for replacing silicon in active regions in future complementary metal-oxide transistors due to: (i) its higher mobility of charge carriers that makes it able to attain higher drive current; (ii) the availability of high-k materials, excellent substitutes for its unstable native oxide and (iii) its lower melting point that allows lower processing temperatures. However, a downscaling beyond 15-nm necessarily requires higher doping levels (higher than 1x10^20cm^-3...

  10. Imaging the oblique propagation of electrons in germanium crystals at low temperature and low electric field

    Moffatt, R. A., E-mail: rmoffatt@stanford.edu; Cabrera, B.; Corcoran, B. M.; Kreikebaum, J. M.; Redl, P.; Shank, B.; Yen, J. J. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Young, B. A. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Department of Physics, Santa Clara University, Santa Clara, California 95053 (United States); Brink, P. L.; Cherry, M.; Tomada, A. [SLAC National Accelerator Facility, Menlo Park, California 94025 (United States); Phipps, A.; Sadoulet, B.; Sundqvist, K. M. [Department of Physics, University of California, Berkeley, California 94720 (United States)

    2016-01-11

    Excited electrons in the conduction band of germanium collect into four energy minima, or valleys, in momentum space. These local minima have highly anisotropic mass tensors which cause the electrons to travel in directions which are oblique to an applied electric field at sub-Kelvin temperatures and low electric fields, in contrast to the more isotropic behavior of the holes. This experiment produces a full two-dimensional image of the oblique electron and hole propagation and the quantum transitions of electrons between valleys for electric fields oriented along the [0,0,1] direction. Charge carriers are excited with a focused laser pulse on one face of a germanium crystal and then drifted through the crystal by a uniform electric field of strength between 0.5 and 6 V/cm. The pattern of charge density arriving on the opposite face is used to reconstruct the trajectories of the carriers. Measurements of the two-dimensional pattern of charge density are compared in detail with Monte Carlo simulations developed for the Cryogenic Dark Matter Search (SuperCDMS) to model the transport of charge carriers in high-purity germanium detectors.

  11. Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition.

    Lin, Edward L; Edmondson, Bryce I; Hu, Shen; Ekerdt, John G

    2016-07-26

    Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and conformality by taking advantage of self-limiting reactions between vapor-phase precursors and the growing film. Perovskite oxides present potential for next-generation electronic materials, but to-date have mostly been deposited by physical methods. This work outlines a method for depositing SrTiO3 (STO) on germanium using ALD. Germanium has higher carrier mobilities than silicon and therefore offers an alternative semiconductor material with faster device operation. This method takes advantage of the instability of germanium's native oxide by using thermal deoxidation to clean and reconstruct the Ge (001) surface to the 2×1 structure. 2-nm thick, amorphous STO is then deposited by ALD. The STO film is annealed under ultra-high vacuum and crystallizes on the reconstructed Ge surface. Reflection high-energy electron diffraction (RHEED) is used during this annealing step to monitor the STO crystallization. The thin, crystalline layer of STO acts as a template for subsequent growth of STO that is crystalline as-grown, as confirmed by RHEED. In situ X-ray photoelectron spectroscopy is used to verify film stoichiometry before and after the annealing step, as well as after subsequent STO growth. This procedure provides framework for additional perovskite oxides to be deposited on semiconductors via chemical methods in addition to the integration of more sophisticated heterostructures already achievable by physical methods.

  12. Experimentally determining the relative efficiency of spherically bent germanium and quartz crystals

    Brown, G. V.; Beiersdorfer, P.; Hell, N.; Magee, E.

    2016-11-01

    We have used the EBIT-I electron beam ion trap at the Lawrence Livermore National Laboratory and a duplicate Orion High Resolution X-ray Spectrometer (OHREX) to measure the relative efficiency of a spherically bent quartz (10 1 ¯ 1) crystal (2d = 6.687 Å) and a spherically bent germanium (111) crystal (2d = 6.532 Å). L-shell X-ray photons from highly charged molybdenum ions generated in EBIT-I were simultaneously focussed and Bragg reflected by each crystal, both housed in a single spectrometer, onto a single CCD X-ray detector. The flux from each crystal was then directly compared. Our results show that the germanium crystal has a reflection efficiency significantly better than the quartz crystal, however, the energy resolution is significantly worse. Moreover, we find that the spatial focussing properties of the germanium crystal are worse than those of the quartz crystal. Details of the experiment are presented, and we discuss the advantages of using either crystal on a streak-camera equipped OHREX spectrometer.

  13. Internal friction in intrinsic and n-type germanium and silicon

    Gerk, A. P.; Williams, Wendell S.

    1982-05-01

    The dependence of the high-temperature internal friction of germanium and silicon, both intrinsic and highly n type, was measured as a function of temperature, frequency, dislocation density, and dopant concentration. An acoustoelectric peak in both germanium and silicon was detected and found to agree well with the theory of Weinreich. The high-temperature dislocation-dependent damping in intrinsic germanium and silicon was studied and seen to be consistent with most previous studies. If deformed at high temperature and allowed to anneal, highly doped n-type material behaved intrinsically due to preferential precipitation at dislocations; however, if deformed at moderate temperatures and not allowed to anneal, such crystals exhibited a greatly enhanced dislocation-dependent internal friction which depended on the extrinsic carrier concentration. A theory was developed for dislocation damping in semiconductors and was found to agree well with experimental results. The model is based upon electronic viscous damping of dislocations by excess current carriers whose lifetimes are controlled by Auger recombination processes.

  14. Effect of normal processes on thermal conductivity of germanium, silicon and diamond

    Banashree Saikai; Anil Kumar

    2008-07-01

    The effect of normal scattering processes is considered to redistribute the phonon momentum in (a) the same phonon branch – KK-S model and (b) between different phonon branches – KK-H model. Simplified thermal conductivity relations are used to estimate the thermal conductivity of germanium, silicon and diamond with natural isotopes and highly enriched isotopes. It is observed that the consideration of the normal scattering processes involving different phonon branches gives better results for the temperature dependence of the thermal conductivity of germanium, silicon and diamond with natural and highly enriched isotopes. Also, the estimation of the lattice thermal conductivity of germanium and silicon for these models with the consideration of quadratic form of frequency dependences of phonon wave vector leads to the conclusion that the splitting of longitudinal and transverse phonon modes, as suggested by Holland, is not an essential requirement to explain the entire temperature dependence of lattice thermal conductivity whereas KK-H model gives a better estimation of the thermal conductivity without the splitting of the acoustic phonon modes due to the dispersive nature of the phonon dispersion curves.

  15. Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys

    Perrin, Jérôme; Takeda, Yoshihiko; Hirano, Naoto; Matsuura, Hideharu; Matsuda, Akihisa

    1989-01-01

    We report a systematic investigation of the effect of ion bombardment during the growth of amorphous silicon-germanium alloy films from silane and germane rf-glow discharge. Independent control of the plasma and the ion flux and energy is obtained by using a triode configuration. The ion contribution to the total deposition rate can reach 20% on negatively biased substrates. Although the Si and Ge composition of the film does not depend on the ion flux and energy, the optical, structural and electronic properties are drastically modified at low deposition temperatures when the maximum ion energy increases up to 50 eV, and remain constant above 50 eV. For a Ge atomic concentration of 37% and a temperature of 135°C, the optical gap decreases from 1.67 to 1.45 eV. This is correlated with a modification of hydrogen bonding configurations. Silicon dihydride sites disappear and preferential attachment of hydrogen to silicon is reduced in favour of germanium. Moreover the photoconductivity increases which shows that ion bombardment is a key parameter to optimize the quality of low band gap amorphous silicon-germanium alloys.

  16. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

    2013-12-02

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

  17. Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory

    Feng, Li-Wei; Chang, Chun-Yen [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Tu, Chun-Hao; Wang, Pai-Syuan [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan (China); Lin, Chao-Cheng [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, 310, Taiwan (China); Chen, Min-Chen [Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin [Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Chen, Shih-Ching [Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Chen, Shih-Cheng [Department of Electrical Engineering and Institute of Electronic Engineering, National Tsing Hua University, Hsinchu, 310, Taiwan (China)

    2011-11-30

    Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 Degree-Sign C, and separated well at 600 Degree-Sign C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 Degree-Sign C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 Degree-Sign C annealing. The electrical characteristics of data retention in the sample with the 600 Degree-Sign C annealing exhibited better performance than the 500 Degree-Sign C-annealed sample, a result associated with the better separation and better crystallization of the NC structures.

  18. Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium

    Sigillito, A. J.; Jock, R. M.; Tyryshkin, A. M.; Beeman, J. W.; Haller, E. E.; Itoh, K. M.; Lyon, S. A.

    2015-12-01

    Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times (T2 ) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has nonmagnetic isotopes so it is expected to support long T2's while offering some new properties. Compared to Si, Ge has a strong spin-orbit coupling, large electron wave function, high mobility, and highly anisotropic conduction band valleys which will all give rise to new physics. In this Letter, the first pulsed electron spin resonance measurements of T2 and the spin-lattice relaxation (T1) times for 75As and 31P donors in natural and isotopically enriched germanium are presented. We compare samples with various levels of isotopic enrichment and find that spectral diffusion due to 73Ge nuclear spins limits the coherence in samples with significant amounts of 73Ge. For the most highly enriched samples, we find that T1 limits T2 to T2=2 T1. We report an anisotropy in T1 and the ensemble linewidths for magnetic fields oriented along different crystal axes but do not resolve any angular dependence to the spectral-diffusion-limited T2 in samples with 73Ge.

  19. Design and Construction of an Ultra-Low-Background 14 Germanium Crystal Array for High Efficiency and Coincidence Measurements

    2008-09-01

    The activity for each isotope was determined from a published series of ORIGEN2 calculations (Perkins 1997) of the time dependant fission product...inventory subsequent to an HEU based nuclear explosion. The published tables were used as a starting point for a separate ORIGEN2 calculation that

  20. Analysis of the dead layer of a detector of germanium with code ultrapure Monte Carlo SWORD-GEANT; Analisis del dead layer de un detector de germanio ultrapuro con el codigo de Monte Carlo SWORDS-GEANT

    Gallardo, S.; Querol, A.; Ortiz, J.; Rodenas, J.; Verdu, G.

    2014-07-01

    In this paper the use of Monte Carlo code SWORD-GEANT is proposed to simulate an ultra pure germanium detector High Purity Germanium detector (HPGe) detector ORTEC specifically GMX40P4, coaxial geometry. (Author)

  1. Investigation of Surface Roughness of Single Point Diamond Turned Germanium Substrate by Coherence Correlation Interferometry and Image Processing

    Gupta, Shivani; Khatri, Neha; Karar, Vinod; Dhami, S. S.

    2016-09-01

    Germanium is a widely used material in the infrared range. Single crystal germanium is used as semiconductor and optical material due to its salient features like high refractive index and proper working in cryogenic conditions. Thus, germanium is an important substrate for infrared lens having many applications in thermal imaging cameras, optical telescopes and miniaturization of infrared optical elements. These applications require optical elements of excellent surface quality and high dimensional accuracy. In addition to fulfil the demands, ultraprecision machine is used to fabricate the optical components. In this work, single crystal germanium (111) mirror is fabricated by using single point diamond tool with, negative rake angle. A large number of experiments are performed to achieve the surface finish of nanometric range. The best and worst combinations of process parameters are found on the basis of surface roughness with the help of coherence correlation interferometry(CCI) measurement and image processing using Canny, Prewitt, Roberts and Sobel edge filters and histogram. These results can be used for fabrication of diffractive optical elements and aspheric lenses of germanium.

  2. Methods to improve and understand the sensitivity of high purity germanium detectors for searches of rare events

    Volynets, Oleksandr

    2012-07-27

    Observation of neutrinoless double beta-decay could answer fundamental questions on the nature of neutrinos. High purity germanium detectors are well suited to search for this rare process in germanium. Successful operation of such experiments requires a good understanding of the detectors and the sources of background. Possible background sources not considered before in the presently running GERDA high purity germanium detector experiment were studied. Pulse shape analysis using artificial neural networks was used to distinguish between signal-like and background-like events. Pulse shape simulation was used to investigate systematic effects influencing the efficiency of the method. Possibilities to localize the origin of unwanted radiation using Compton back-tracking in a granular detector system were examined. Systematic effects in high purity germanium detectors influencing their performance have been further investigated using segmented detectors. The behavior of the detector response at different operational temperatures was studied. The anisotropy effects due to the crystallographic structure of germanium were facilitated in a novel way to determine the orientation of the crystallographic axes.

  3. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    Jamali, Hossein, E-mail: h.jamali@mut-es.ac.ir; Mozafarinia, Reza; Eshaghi, Akbar

    2015-10-15

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH{sub 4} and CH{sub 4} precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH{sub 4}:GeH{sub 4} flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH{sub 4}:GeH{sub 4} flow ratio.

  4. Characterization of segmented large volume, high purity germanium detectors

    Bruyneel, B. [Koeln Univ. (Germany). Inst. fuer Kernphysik

    2006-07-01

    {gamma}-ray tracking in future HPGe arrays like AGATA will rely on pulse shape analysis (PSA) of multiple {gamma}-interactions. For this purpose, a simple and fast procedure was developed which enabled the first full characterization of a segmented large volume HPGe detector. An analytical model for the hole mobility in a Ge crystal lattice was developed to describe the hole drift anisotropy with experimental velocity values along the crystal axis as parameters. The new model is based on the drifted Maxwellian hole distribution in Ge. It is verified by reproducing successfully experimental longitudinal hole anisotropy data. A comparison between electron and hole mobility shows large differences for the longitudinal and tangential velocity anisotropy as a function of the electrical field orientation. Measurements on a 12 fold segmented, n-type, large volume, irregular shaped HPGe detector were performed in order to determine the parameters of anisotropic mobility for electrons and holes as charge carriers created by {gamma}-ray interactions. To characterize the electron mobility the complete outer detector surface was scanned in small steps employing photopeak interactions at 60 keV. A precise measurement of the hole drift anisotropy was performed with 356 keV rays. The drift velocity anisotropy and crystal geometry cause considerable rise time differences in pulse shapes depending on the position of the spatial charge carrier creation. Pulse shapes of direct and transient signals are reproduced by weighting potential calculations with high precision. The measured angular dependence of rise times is caused by the anisotropic mobility, crystal geometry, changing field strength and space charge effects. Preamplified signals were processed employing digital spectroscopy electronics. Response functions, crosstalk contributions and averaging procedures were taken into account implying novel methods due to the segmentation of the Ge-crystal and the digital electronics

  5. Axiom turkey genotyping array

    The Axiom®Turkey Genotyping Array interrogates 643,845 probesets on the array, covering 643,845 SNPs. The array development was led by Dr. Julie Long of the USDA-ARS Beltsville Agricultural Research Center under a public-private partnership with Hendrix Genetics, Aviagen, and Affymetrix. The Turk...

  6. Clocked combustor can array

    Kim, Won-Wook; McMahan, Kevin Weston; Srinivasan, Shiva Kumar

    2017-01-17

    The present application provides a clocked combustor can array for coherence reduction in a gas turbine engine. The clocked combustor can array may include a number of combustor cans positioned in a circumferential array. A first set of the combustor cans may have a first orientation and a second set of the combustor cans may have a second orientation.

  7. A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics

    Sukhdeo, David S; Kang, Ju-Hyung; Brongersma, Mark L; Saraswat, Krishna C

    2014-01-01

    Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in microdisks patterned within ultrathin germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into the microdisk region. Biaxial strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained microdisks. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different microdisks to be independently tuned in a single mask process. Our theoretical calculations show that this platform can deliver substantial performance improvements, including a >200x reduction in the lasing threshold, to bia...

  8. The MAJORANA DEMONSTRATOR: An R&D project towards a tonne-scale germanium neutrinoless double-beta decay search

    Aalseth, Craig E; Amman, M; Amsbaugh, John F; Avignone, F. T.; Back, Henning O; Barabash, A; Barbeau, Phil; Beene, Jim; Bergevin, M; Bertrand, F; Boswell, M; Brudanin, V; Bugg, William; Burritt, Tom H; Chan, Yuen-Dat; Collar, J I; Cooper, R J; Creswick, R; Detwiler, Jason A; Doe, P J; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H; Elliott, Steven R; Ely, James H; Esterline, James H; Farach, H A; Fast, James E; Fields, N; Finnerty, P; Fujikawa, Brian; Fuller, Erin S; Gehman, Victor; Giovanetti, G K; Guiseppe, Vincente; Gusey, K; Hallin, A L; Hazama, R; Henning, Reyco; Hime, Andrew; Hoppe, Eric W; Hossbach, Todd W; Howe, M A; Johnson, R A; Keeter, K; Keillor, Martin E; Keller, C; Kephart, Jeremy D; Kidd, Mary; Kochetov, Oleg; Konovalov, S; Kouzes, Richard T; Lesko, Kevin; Leviner, L; Loach, J C; Luke, P; MacMullin, S; Marino, Michael G; Mei, Dong-Ming; Miley, Harry S; Miller, M; Mizouni, Leila K; Montoya, A; Myers, A W; Nomachi, Masaharu; Odom, Brian; Orrell, John L; Phillips, D; Poon, Alan; Prior, Gersende; Qian, J; Radford, D C; Rielage, Keith; Robertson, R G. H.; Rodriguez, Larry; Rykaczewski, Krzysztof P; Schubert, Alexis G; Shima, T; Shirchenko, M; Strain, J; Thomas, K; Thompson, Robert C; Timkin, V; Tornow, W; Van Wechel, T D; Vanyushin, I; Vetter, Kai; Warner, Ray A; Wilkerson, J; Wouters, Jan; Yakushev, E; Young, A; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C L; Zimmerman, S

    2009-12-17

    The MAJORANA collaboration is pursuing the development of the so-called MAJORANA DEMONSTRATOR. The DEMONSTRATOR is intended to perform research and development towards a tonne-scale germanium-based experiment to search for the neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR can also perform a competitive direct dark matter search for light WIMPs in the 1-10GeV/c2 mass range. It will consist of approximately 60 kg. of germanium detectors in an ultra-low background shield located deep underground at the Sanford Underground Laboratory in Lead, SD. The DEMONSTRATOR will also perform background and technology studies, and half of the detector mass will be enriched germanium. This talk will review the motivation, design, technology and status of the Demonstrator.

  9. Measurement of the total neutron cross-section of germanium at energies below 2 eV

    Salama, M.

    1983-01-01

    The total neutron cross-section of germanium has been measured at room temperature as a function of neutron energy in the range between 2.2 eV and 7 meV for randomly distributed crystals of germanium by transmission method using a chopper time-of-flight spectrometer at ET-RR-1 research reactor. The measured cross-section showed an evidence of 1/..nu.. thermal slope in the energy range 1.20 eV to 0.20 eV. Crystal structure effects were also observed. Calculations were performed giving values for the coherent scattering amplitude as well as the coherent scattering cross-section. The results obtained showed also the absence of scattering nuclear spin dependence in case of germanium.

  10. Biological insertion of nanostructured germanium and titanium oxides into diatom biosilica

    Jeffryes, Clayton S.

    There is significant interest in titanium oxide and germanium-silicon oxide nanocomposites for optoelectronic, photocatalytic, and solar cell applications. The ability of the marine diatom Pinnularia sp. to uptake soluble metal oxides from cell culture medium, and incorporate them into the micro- and nano-structure of their amorphous silica cell walls, called frustules, was evaluated using an engineered photobioreactor system. The effects of metal oxides on the structural and elemental properties of the frustule were also evaluated. Diatom cell cultures grown in 5 L photobioreactors were initially charged with 0.5 mM of soluble silicon, Si(OH)4, an obligate substrate required for frustule fomation. Upon exhaustion of Si(OH)4 cells were exposed to the mixed pulse-addition of soluble silicon and germanium or co-perfusion addition of soluble silicon and titanium, which were incorporated into the frustules. Metals composition of the cell culture medium, diatom biomass and purified frustules were measured, as was the local elemental composition within the frustule pores and the metal oxide crystallinity. Diatom frustules having a germanium composition of 1.6 wt % were devoid of the native intra-pore structures and possessed enhanced photoluminescence and electroluminescence when compared to frustules without Ge. Diatoms cultivated in the presence of soluble titanium incorporated amorphous titania into the frustule, which maintained native structure even when local TiO2 concentrations within the nanopores approached 60 wt. %. Titanium oxide could also be biomimetically deposited directly within the diatom nanopores by adsorbing poly-L-lysine to the diatom biosilica where it catalyzed the soluble titanium precursor Ti-BALDH into amorphous titania nanoparticles. Both biogenic and biomimetic titania could be converted to anatase titanium by thermal annealing. It was determined that nanostructured metal oxide composites can be fabricated biomimetically or in cell culture to

  11. Diffusion of E centers in germanium predicted using GGA+U approach

    Tahini, H. A.

    2011-08-17

    Density functional theory calculations (based on GGA+U approach) are used to investigate the formation and diffusion of donor-vacancy pairs (E centers) in germanium. We conclude that depending upon the Fermi energy,E centers that incorporate for phosphorous and arsenic can form in their neutral, singly negatively or doubly negatively charged states whereas with antimony only the neutral or doubly negatively charged states are predicted. The activation energies of diffusion are compared with recent experimental work and support the idea that smaller donor atoms exhibit higher diffusionactivation energies.

  12. Experiments towards size and dopant control of germanium quantum dots for solar applications

    2015-01-01

    While the literature for the doping of silicon quantum dots (QDs) and nanocrystals (NCs) is extensive, reports of doping their germanium analogs are sparse. We report a range of attempts to dope Ge QDs both during and post-synthesis. The QDs have been characterized by TEM, XPS, and I/V measurements of SiO2 coated QD thin films in test cells using doped Si substrates. The solution synthesis of Ge QDs by the reduction of GeCl4 with LiAlH4 results in Ge QDs with a low level of chlorine atoms on ...

  13. Synthesis and characterization of germanium monosulphide (GeS) single crystals grown using different transporting agents

    G K Solanki; Dipika B Patel; Sandip Unadkat; M K Agarwal

    2010-05-01

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) respectively. Resistivity measurements have been carried out in different temperature ranges. Transport parameters, e.g. resistivity, Hall coefficient, carrier concentration and mobility have been measured at varying magnetic fields. All the experimental results have been explained.

  14. Low-energy neutrino and dark matter physics with sub-keV germanium detectors

    A K Soma; L Singh; M K Singh; V Singh; H T Wong

    2012-11-01

    The TEXONO-CDEX Collaboration (Taiwan experiment on neutrino–China dark matter experiment) explores high-purity germanium (HPGe) detection technology to develop a sub-keV threshold detector for pursuing studies on low mass weakly interacting massive particles (WIMPs), properties of neutrino and the possibilities of neutrino-nucleus coherent scattering observation. This article will introduce the facilities of newly established China Jing-Ping Underground Laboratory (CJPL), preliminary result of cosmic ray background studies at CJPL, the dark matter studies pursued at Kuo-Sheng Neutrino Laboratory (KSNL) and research efforts to accomplish our physics goals.

  15. Ultra-Low-Energy Germanium Detector for Neutrino-Nucleus Coherent Scattering and Dark Matter Searches

    Wong, Henry T

    2008-01-01

    The status and plans of a research program on the development of ultra-low-energy germanium detectors with sub-keV sensitivities are reported. We survey the scientific goals which include the observation of neutrino-nucleus coherent scattering, the studies of neutrino magnetic moments, as well as the searches of WIMP dark matter. In particular, a threshold of 100-200 eV and a sub-keV background comparable to underground experiments were achieved with prototype detectors. New limits were set for WIMPs with mass between 3-6 GeV. The prospects of the realization of full-scale experiments are discussed.

  16. High-precision efficiency calibration of a high-purity co-axial germanium detector

    Blank, B., E-mail: blank@cenbg.in2p3.fr [Centre d' Etudes Nucléaires de Bordeaux Gradignan, UMR 5797, CNRS/IN2P3, Université de Bordeaux, Chemin du Solarium, BP 120, 33175 Gradignan Cedex (France); Souin, J.; Ascher, P.; Audirac, L.; Canchel, G.; Gerbaux, M.; Grévy, S.; Giovinazzo, J.; Guérin, H.; Nieto, T. Kurtukian; Matea, I. [Centre d' Etudes Nucléaires de Bordeaux Gradignan, UMR 5797, CNRS/IN2P3, Université de Bordeaux, Chemin du Solarium, BP 120, 33175 Gradignan Cedex (France); Bouzomita, H.; Delahaye, P.; Grinyer, G.F.; Thomas, J.C. [Grand Accélérateur National d' Ions Lourds, CEA/DSM, CNRS/IN2P3, Bvd Henri Becquerel, BP 55027, F-14076 CAEN Cedex 5 (France)

    2015-03-11

    A high-purity co-axial germanium detector has been calibrated in efficiency to a precision of about 0.15% over a wide energy range. High-precision scans of the detector crystal and γ-ray source measurements have been compared to Monte-Carlo simulations to adjust the dimensions of a detector model. For this purpose, standard calibration sources and short-lived online sources have been used. The resulting efficiency calibration reaches the precision needed e.g. for branching ratio measurements of super-allowed β decays for tests of the weak-interaction standard model.

  17. Aluminum, gallium, germanium, copper, and phosphorus complexes of meso-triaryltetrabenzocorrole.

    Pomarico, Giuseppe; Nardis, Sara; Naitana, Mario L; Vicente, M Graça H; Kadish, Karl M; Chen, Ping; Prodi, Luca; Genovese, Damiano; Paolesse, Roberto

    2013-04-01

    5,10,15-Triaryltetrabenzocorrole complexes of aluminum, gallium, germanium, and phosphorus were synthesized by coordination of these metal ions in the preformed triaryltetrabenzocorrole macrocycle, opening a way to the investigation of different metal complexes. The UV-vis spectra of these derivatives exhibit a red shift and broadening of all absorption bands because of the π-extended aromatic system and distortion of the molecular framework. The electrochemical and photophysical behaviors of the free base and the metal complexes of meso-triaryltetrabenzocorrole were investigated and characterized.

  18. Structural and optical properties of axial silicon-germanium nanowire heterojunctions

    Wang, X.; Tsybeskov, L., E-mail: tsybesko@njit.edu [ECE Department, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States); Kamins, T. I. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Wu, X.; Lockwood, D. J. [National Research Council, Ottawa, Ontario K1A 0R6 (Canada)

    2015-12-21

    Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements.

  19. Effect of uniaxial stress on gallium, beryllium, and copper-doped germanium hole population inversion lasers

    Chamberlin, Danielle Russell [Univ. of California, Berkeley, CA (United States)

    1998-05-01

    The effects of stress on germanium lasers doped with single, double, and triple acceptors have been investigated. The results can be explained quantitatively with theoretical calculations and can be attributed to specific changes in the energy levels of acceptors in germanium under stress. In contrast to previous measurements, gallium-doped Ge crystals show a decrease in lasing upon uniaxial stress. The decrease seen here is attributed to the decrease in heavy hole effective mass upon application of uniaxial stress, which results in a decreased population inversion. The discrepancy between this work and previous studies can be explained with the low compensation level of the material used here. Because the amount of ionized impurity scattering in low-compensated germanium lasers is small to begin with, the reduction in scattering with uniaxial stress does not play a significant role in changing the laser operation. Beryllium-doped germanium lasers operate based on a different mechanism of population inversion. In this material it is proposed that holes can transfer between bands by giving their energy to a neutral beryllium atom, raising the hole from the ground to a bound excited state. The free hole will then return to zero energy with some probability of entering the other band. The minimum and maximum E/B ratios for lasing change with uniaxial stress because of the change in effective mass and bound excited state energy. These limits have been calculated for the case of 300 bar [100] stress, and match very well with the observed data. This adds further credence to the proposed mechanism for population inversion in this material. In contrast to Be and Ga-doped lasers, copper-doped lasers under uniaxial stress show an increase in the range of E and B where lasing is seen. To understand this change the theoretical limits for population inversion based on both the optical phonon mechanism and the neutral acceptor mechanism have been calculated. The data are

  20. Enhanced shower formation in aligned thick germanium crystals and discrimination against charged hadrons

    Baurichter, A.; Kirsebom, K.; Medewaldt, R.; Mikkelsen, U.; Møller, S.; Uggerhøj, E.; Worm, T.; Elsener, K.; Ballestrero, S.; Sona, P.; Romano, J.

    1995-11-01

    The distribution of the energy released in a thin silicon detector placed on the downstream side of a thick germanium single crystal bombarded with a 150 GeV electron or pion beam along directions close to the axis or along random directions has been investigated. In view of a possible application to very high energy gamma ray astronomy and particle physics, the intrinsic capability of such a device to reject, on the basis of energy discrimination, unwanted events due to charged hadrons together with the resulting loss of efficiency for the detection of showers initiated by high energy electrons, is determined as a function of the chosen energy threshold.

  1. A New Expression for the Full Energy Peak Efficiency of a High Pure Germanium Detector

    Medhat, M E; Awaad, Z

    2001-01-01

    An empirical expression for the full energy photo-peak efficiency in terms of gamma-ray energy (E) and the vertical distance from the detector surface (d) (i.e. efficiency = function (d,E)) has been obtained for a high pure germanium detector (HPGe) using different standard sources. Comparison of the calculated efficiencies and the experimentally measured values for the energy range from 59.5-1332.2 keV and a source-to-detector distance of 5-30 cm showed that the theoretical values agree with the experiment.

  2. Evaluations of the commercial spectrometer systems for safeguards applications using the germanium detectors

    Vo, D.T.

    1998-12-31

    Safeguards applications require the best spectrometer systems with excellent resolution, stability, and throughput. Instruments must perform well in all the situations and environments. Data communication to the computer should be convenient, fast, and reliable. The software should have all the necessary tools and be ease to use. Portable systems should be small in size, lightweight, and have a long battery life. Nine commercially available spectrometer systems are tested with both the planar and coaxial germanium detectors. Considering the performance of the Digital Signal Processors (DSP), digital-based spectroscopy may be the future of gamma-ray spectroscopy.

  3. Co-doping with antimony to control phosphorous diffusion in germanium

    Tahini, H. A.

    2013-02-15

    In germanium, phosphorous and antimony diffuse quickly and as such their transport must be controlled in order to design efficient n-typed doped regions. Here, density functional theory based calculations are used to predict the influence of double donor co-doping on the migration activation energies of vacancy-mediated diffusion processes. The migration energy barriers for phosphorous and antimony were found to be increased significantly when larger clusters involving two donor atoms and a vacancy were formed. These clusters are energetically stable and can lead to the formation of even larger clusters involving a number of donor atoms around a vacancy, thereby affecting the properties of devices.

  4. Final Report for Monitoring of Reactor Antineutrinos with Compact Germanium Detectors

    Orrell, John L.; Collar, J. I.

    2009-07-01

    This 2008 NCMR project has pursued measurement of the antineutrino-nucleus coherent scattering interaction using a low-energy threshold germanium gamma-ray spectrometer of roughly one-half kilogram total mass. These efforts support development of a compact system for monitoring the antineutrino emission from nuclear reactor cores. Such a monitoring system is relevant to nuclear safeguards and nuclear non-proliferation in general by adding a strong method for assuring quantitative material balance of special nuclear material in the nuclear fuel cycle used in electricity generation.

  5. Optical and Structural Characterization of Pin Photodetector Based on Germanium Nanocrystals for Third Generation Solar Cells

    K.K. Sossoe

    2016-11-01

    Full Text Available We investigated the structural and optoelectronic properties of p-n germanium nanocrystals based junctions embedded between GaAs substrate and layers of ZnO:Al or a-Si:H. Scanning electron microscopy and scanning tunneling microscopy were used on these junctions in this work. Calculations of tunneling current on the substrate showed effect of localized defects trapping Fermi level at the surface tending to make a semi-insulating substrate. The average value of the diameter of the Ge nanoparticle is around 12.5 nm. These results lay the foundation for the development of solar cells which active part is made of GeNCs.

  6. Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories

    Akca, Imran B.; Dâna, Aykutlu; Aydinli, Atilla; Turan, Rasit

    2008-02-01

    Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons.

  7. Results from a Low-Energy Analysis of the CDMS II Germanium Data

    Ahmed, Z; Arrenberg, S; Bailey, C N; Balakishiyeva, D; Baudis, L; Bauer, D A; Brink, P L; Bruch, T; Bunker, R; Cabrera, B; Caldwell, D O; Cooley, J; Cushman, P; Daal, M; DeJongh, F; Dragowsky, M R; Duong, L; Fallows, S; Figueroa-Feliciano, E; Filippini, J; Fritts, M; Golwala, S R; Hall, J; Hennings-Yeomans, R; Hertel, S A; Holmgren, D; Hsu, L; Huber, M E; Kamaev, O; Kiveni, M; Kos, M; Leman, S W; Mahapatra, R; Mandic, V; McCarthy, K A; Mirabolfathi, N; Moore, D; Nelson, H; Ogburn, R W; Phipps, A; Pyle, M; Qiu, X; Ramberg, E; Rau, W; Reisetter, A; Saab, T; Sadoulet, B; Sander, J; Schnee, R W; Seitz, D N; Serfass, B; Sundqvist, K M; Tarka, M; Wikus, P; Yellin, S; Yoo, J; Young, B A; Zhang, J

    2010-01-01

    We report results from a reanalysis of data from the Cryogenic Dark Matter Search (CDMS II) experiment at the Soudan Underground Laboratory. Data taken between October 2006 and September 2008 using eight germanium detectors are reanalyzed with a lowered, 2 keV recoil-energy threshold, to give increased sensitivity to interactions from Weakly Interacting Massive Particles (WIMPs) with masses below ~10 GeV/c^2. This analysis provides stronger constraints than previous CDMS II results for WIMP masses below 9 GeV/c^2 and excludes parameter space associated with possible low-mass WIMP signals from the DAMA/LIBRA and CoGeNT experiments.

  8. Electronic Structure of Single-Crystal Monolayer Graphene on Hydrogen-Terminated Germanium Surface

    Ahn, Sung Joon; Lee, Jae-Hyun; Ahn, Joung Real; Whang, Dongmok

    2015-03-01

    Graphene, atomically flat 2-Dimensional layered nano material, has a lot of interesting characteristics from its unusual electronic structure. Almost properties of graphene are influenced by its crystallinity, therefore the uniform growth of single crystal graphene and layer control over the wafer scale areas remains a challenge in the fields of electronic, photonic and other devices based on graphene. Here, we report the method to make wafer scale single crystal monolayer graphene on hydrogen terminated germanium(110) surface and properties and electronic band structure of the graphene by using the tool of scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, electron transport measurement, electron diffraction and angle-resolved photoemission spectroscopy.

  9. Laplace DLTS investigation of transition metal-hydrogen complexes in germanium

    Gurimskaya, Y.; Mesli, A.

    2014-02-01

    High-resolution Laplace DLTS technique has been used to examine fine structures in the carrier emission processes hidden in the broad conventional DLTS peaks recorded in germanium samples, doped by several transition metals - Ni, Cr and Fe. These structures are found to be correlated with the acceptors, related to mentioned impurities, and also with possible presence of hydrogen-related defects. A link explaining interaction of transition metals with hydrogen due to the applied chemical treatment during sample preparation process is revealed and compared to what is known in silicon.

  10. In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

    Koleśnik-Gray, Maria M.; Krstić, Vojislav, E-mail: vojislav.krstic@fau.de [Department of Physics, Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Staudtstr. 7, 91058 Erlangen (Germany); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), and AMBER at CRANN, Trinity College Dublin, College Green, Dublin 2 (Ireland); School of Physics, Trinity College Dublin, College Green, Dublin 2 (Ireland); Sorger, Christian; Weber, Heiko B. [Department of Physics, Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Staudtstr. 7, 91058 Erlangen (Germany); Biswas, Subhajit; Holmes, Justin D. [Materials Chemistry and Analysis Group, Department of Chemistry, Tyndall Institute, University College Cork, Cork (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), and AMBER at CRANN, Trinity College Dublin, College Green, Dublin 2 (Ireland)

    2015-06-08

    We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.

  11. Experimental Search for Solar Axions via Coherent Primakoff Conversion in a Germanium Spectrometer

    Avignone, F T; Brodzinski, R; Collar, J I; Creswick, R J; Di Gregorio, D E; Farach, H A; Gattone, A O; Guérard, C K; Hasenbalg, F; Huck, H; Miley, H S; Morales, A; Morales, J; Nussinov, S; De Solorzano, A O; Reeves, J H; Villar, J; Zioutas, Konstantin

    1998-01-01

    Results are reported of an experimental search for the unique, rapidly varying temporal pattern of solar axions coherently converting into photons via the Primakoff effect in a single crystal germanium detector. This conversion is predicted when axions are incident at a Bragg angle with a crystalline plane. The analysis of approximately 1.94 kg.yr of data from the 1 kg DEMOS detector in Sierra Grande, Argentina, yields a new laboratory bound on axion-photon coupling of $g_{a\\gamma \\gamma} < 2.7\\cdot 10^{-9}$ GeV$^{-1}$, independent of axion mass up to ~ 1 keV.

  12. Determination of Trace Germanium in Marine Sediments by Hydride Generation-Atomic Fluorescence Spectrometry (HG-AFS)

    LI Jing; ZHAO Shilan; ZHANG Zhaohui; ZENG Xianjie

    2004-01-01

    A method for the analysis of trace germanium in marine sediments by HG-AFS has been investigated. The experimental conditions such as the acidity of reduction reaction, the amount of sodium boro-hydride, the carrier gas flow rate, etc., were tested and optimized by using a kind of orthogonal design. The detection limit of the presented method is 0.95 μg L-1 for germanium. The calibration curve shows a satisfactory line in the concentration range 0-320 μg L-1 Ge with a variation coefficient of ±2.1%.

  13. Enhanced electromagnetic showers initiated by 20-180 GeV gamma rays on aligned thick germanium crystals

    Baurichter, A.; Kirsebom, K.; Medenwaldt, R.; Mikkelsen, U.; Moeller, S.P.; Uggerhoej, E.; Worm, T.; Kononets, Y.V.; Elsener, K.; Ballestrero, S.; Sona, P.; Biino, C.; Connell, S.H.; Sellschop, J.P.F.; Vilakazi, Z.Z.; Apyan, A.; Avakian, R.O.; Ispirian, K.A.; Taroian, S.P

    1999-06-01

    The distribution of the energy released in a silicon detector placed on the downstream side of thick germanium single crystals bombarded by 20-180 GeV gamma rays along directions close to the <1 1 0> axis or along a random direction has been investigated. A large enhancement of the shower for axial incidence of the gamma rays has been found. The response of the system composed of a germanium crystal and a silicon detector to single gamma rays as a function of their energy has been deduced and compared with existing Monte Carlo simulations.

  14. Enhanced electromagnetic showers initiated by 20-180 GeV gamma rays on aligned thick germanium crystals

    Baurichter, A.; Kirsebom, K.; Medenwaldt, R.; Mikkelsen, U.; Møller, S. P.; Uggerhøj, E.; Worm, T.; Kononets, Y. V.; Elsener, K.; Ballestrero, S.; Sona, P.; Biino, C.; Connell, S. H.; Sellschop, J. P. F.; Vilakazi, Z. Z.; Apyan, A.; Avakian, R. O.; Ispirian, K. A.; Taroian, S. P.

    1999-06-01

    The distribution of the energy released in a silicon detector placed on the downstream side of thick germanium single crystals bombarded by 20-180 GeV gamma rays along directions close to the axis or along a random direction has been investigated. A large enhancement of the shower for axial incidence of the gamma rays has been found. The response of the system composed of a germanium crystal and a silicon detector to single gamma rays as a function of their energy has been deduced and compared with existing Monte Carlo simulations.

  15. Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers

    Calandrini, Eugenio; Venanzi, Tommaso; Appugliese, Felice; Badioli, Michela; Giliberti, Valeria; Baldassarre, Leonetta; Biagioni, Paolo; De Angelis, Francesco; Klesse, Wolfgang M.; Scappucci, Giordano; Ortolani, Michele

    2016-09-01

    We study plasmonic nanoantennas for molecular sensing in the mid-infrared made of heavily doped germanium, epitaxially grown with a bottom-up doping process and featuring free carrier density in excess of 1020 cm-3. The dielectric function of the 250 nm thick germanium film is determined, and bow-tie antennas are designed, fabricated, and embedded in a polymer. By using a near-field photoexpansion mapping technique at λ = 5.8 μm, we demonstrate the existence in the antenna gap of an electromagnetic energy density hotspot of diameter below 100 nm and confinement volume 105 times smaller than λ3.

  16. Electronic Switch Arrays for Managing Microbattery Arrays

    Mojarradi, Mohammad; Alahmad, Mahmoud; Sukumar, Vinesh; Zghoul, Fadi; Buck, Kevin; Hess, Herbert; Li, Harry; Cox, David

    2008-01-01

    Integrated circuits have been invented for managing the charging and discharging of such advanced miniature energy-storage devices as planar arrays of microscopic energy-storage elements [typically, microscopic electrochemical cells (microbatteries) or microcapacitors]. The architecture of these circuits enables implementation of the following energy-management options: dynamic configuration of the elements of an array into a series or parallel combination of banks (subarrarys), each array comprising a series of parallel combination of elements; direct addressing of individual banks for charging/or discharging; and, disconnection of defective elements and corresponding reconfiguration of the rest of the array to utilize the remaining functional elements to obtain the desited voltage and current performance. An integrated circuit according to the invention consists partly of a planar array of field-effect transistors that function as switches for routing electric power among the energy-storage elements, the power source, and the load. To connect the energy-storage elements to the power source for charging, a specific subset of switches is closed; to connect the energy-storage elements to the load for discharging, a different specific set of switches is closed. Also included in the integrated circuit is circuitry for monitoring and controlling charging and discharging. The control and monitoring circuitry, the switching transistors, and interconnecting metal lines are laid out on the integrated-circuit chip in a pattern that registers with the array of energy-storage elements. There is a design option to either (1) fabricate the energy-storage elements in the corresponding locations on, and as an integral part of, this integrated circuit; or (2) following a flip-chip approach, fabricate the array of energy-storage elements on a separate integrated-circuit chip and then align and bond the two chips together.

  17. Exploration Of Activity Measurements And Equilibrium Checks For Sediment Dating Using Thick-Window Germanium Detectors

    Warner, Jacob A.; Fitzsimmons, Kathryn E.; Reynolds, Eva M.; Gladkis, Laura G.; Timmers, Heiko

    2011-06-01

    Activity measurements on sediment samples for trapped-charge geological dating using gamma-ray spectroscopy are an important verification of the field-site dose rate determination. Furthermore gamma-ray spectroscopy can check if the natural decay series are in secular equilibrium which is a crucial assumption in such dating. Typically the activities of leading members of the Thorium and Uranium decay series are measured, which requires Germanium detectors with thin windows and good energy resolution in order to effectively detect the associated low energy gamma-rays. Such equipment is not always readily available. The potential of conventional Germanium detectors with thick entrance window has been explored towards routine gamma-ray spectroscopy of sediment samples using higher energy gamma-rays. Alternative isotopes, such as Ac-228 and Pb-212 for the Thorium series, and Pa-234m, Ra-226 and Bi-214 for the Uranium series, have been measured in order to determine the mass-specific activity for the respective series and possibly provide a check of secular equilibrium. In addition to measurements of the K-40 activity, with the alternative approach, the activities of both decay series can be accurately determined. The secular equilibrium condition may be tested for the Thorium series. Measurement accuracy for Pa-234m is, however, not sufficient to permit also a reliable check of equilibrium for the Uranium series.

  18. Self-assembled germanium nano-structures by laser-assisted oxidation

    Huang Wei-Qi; Liu Shi-Rong

    2006-01-01

    The investigation on the oxidation behaviour of Si1-xGex; alloys (x=0.05, 0.15, and 0.25) is carried out. It is found for the first time that on the oxide film a germanium nano-cap with a thickness of 1.8ranging from 5.5 nm to 10 nm are formed by the low-temperature laser-assisted dry oxidation of Si1-xGex substrate. A new scanning method on the decline cross-section of the multiple-layer sample is adopted to measure the layer thickness and the composition. Some new peaks in photoluminescence (PL) spectra are discovered, which could be related to the nano-cap and the nano-particles of germanium. A suitable model and several new calculating formulae with the unrestricted Hartree-Fock-Roothaan (UHFR) method and quantum confinement analysis are proposed to interpret the PL spectra and the nano-structure mechanism in the oxide.

  19. Reactivity of silicon and germanium doped CNTs toward aromatic sulfur compounds: A theoretical approach

    Galano, Annia [Departamento de Quimica, Universidad Autonoma Metropolitana-Iztapalapa, San Rafael Atlixco 186, Col. Vicentina. Iztapalapa, C.P. 09340 Mexico D.F. (Mexico); Instituto Mexicano del Petroleo, Eje Central Lazaro Cardenas 152, 07730 Mexico D.F. (Mexico)], E-mail: agalano@prodigy.net.mx; Francisco-Marquez, Misaela [Departamento de Quimica, Universidad Autonoma Metropolitana-Iztapalapa, San Rafael Atlixco 186, Col. Vicentina. Iztapalapa, C.P. 09340 Mexico D.F. (Mexico); Instituto Mexicano del Petroleo, Eje Central Lazaro Cardenas 152, 07730 Mexico D.F. (Mexico)

    2008-04-03

    Adsorption processes of thiophene and benzothiophene on pristine carbon nanotubes (CNTs), and on CNTs doped with Si or Ge, have been modeled with Density Functional. This is the first study on the chemical reactivity of such doped tubes. The calculated data suggest that the presence of silicon or germanium atoms in CNTs increases their reactivity toward thiophene, and benzothiophene. The adsorption of these species on pristine CNTs seems very unlikely to occur, while the addition products involving doped CNTs were found to be very stable, with respect to the isolated reactants, in terms of Gibbs free energy. Several of these adsorption processes were found to be significantly exergonic ({delta}G < 0) in non-polar liquid phase. The results reported in this work suggest that Si and Ge defects on CNTs increase their reactivity toward unsaturated species, and could make them useful in the removal processes of aromatic sulfur compounds from oil-hydrocarbons. However, according to our results, CNTs doped with Si atoms are expected to be more efficient as aromatic sulfur compounds scavengers than those doped with Ge. These results also suggest that the presence of silicon and germanium atoms in the CNTs structures enhances their reactivity toward nucleophilic molecules, compared to pristine carbon nanotubes.

  20. Efficient one-pot synthesis of monodisperse alkyl-terminated colloidal germanium nanocrystals

    Carolan, Darragh, E-mail: darragh.carolan@tyndall.ie; Doyle, Hugh, E-mail: hugh.doyle@tyndall.ie [University College Cork, Tyndall National Institute (Ireland)

    2014-12-15

    An efficient one-pot method for fabricating alkyl-capped germanium nanocrystals (Ge NCs) is reported. Ge NCs with a size of 3.9 ± 0.5 nm, are formed by co-reduction of germanium tetrachloride in the presence of n-butyltrichlorogermane, producing NCs with butyl-terminated surfaces. The advantage of this method is that it allows rapid synthesis and functionalisation of NCs with minimal post-synthetic purification requirements. TEM imaging showed that the Ge NCs are monodisperse and highly crystalline, while EDX and SAED confirmed the chemical identity and crystal phase of the NCs. FTIR and XPS confirmed that the Ge NCs were well passivated, with some oxidation of the nanocrystal surface. Optical spectroscopy of the NCs showed a strong absorbance in the UV region and an excitation wavelength dependent photoluminescence in the UV/violet. Time resolved photoluminescence measurements showed the presence of two nanosecond lifetime components, consistent with recombination of photogenerated excitons at low lying energy states present at the nanocrystal surface. Photoluminescence quantum yields were determined to be 37 %, one of the highest values reported for organically terminated Ge NCs.

  1. GeMini: The Next-Generation Mechanically-Cooled Germanium Spectrometer

    Burks, M

    2008-11-12

    The next-generation mechanically-cooled germanium spectrometer has been developed. GeMini (MINIature GErmanium spectrometer) has been designed to bring high-resolution gamma-ray spectroscopy to a range of demanding field environments. Intended applications include short-notice inspections, border patrol, port monitoring and emergency response, where positive nuclide identification of radioactive materials is required but power and liquid cryogen are not easily available. GeMini weighs 2.75 kg for the basic instrument and 4.5 kg for the full instrument including user interface and ruggedized hermetic packaging. It is very low power allowing it to operate for 10 hours on a single set of rechargeable batteries. This instrument employs technology adapted from the gamma-ray spectrometer currently flying on NASA's Mercury MESSENGER spacecraft. Specifically, infrared shielding techniques allow for a vast reduction of thermal load. This in turn allows for a smaller, lighter-weight design, well-suited for a hand-held instrument. Three working prototypes have been built and tested in the lab. The measured energy resolution is 3 keV fwhm at 662 keV gamma-rays. This paper will focus on the design and performance of the instrument.

  2. A model for the effects of germanium on silica biomineralization in choanoflagellates

    Chappell, Helen; Ratcliffe, Sarah; Goldstein, Raymond E.

    2016-01-01

    Silica biomineralization is a widespread phenomenon of major biotechnological interest. Modifying biosilica with substances like germanium (Ge) can confer useful new properties, although exposure to high levels of Ge disrupts normal biosilicification. No clear mechanism explains why this disruption occurs. Here, we study the effect of Ge on loricate choanoflagellates, a group of protists that construct a species-specific extracellular lorica from multiple siliceous costal strips. High Ge exposures were toxic, whereas lower Ge exposures produced cells with incomplete or absent loricae. These effects can be ameliorated by restoring the germanium : silicon ratio, as observed in other biosilicifying organisms. We developed simulations of how Ge interacts with polymerizing silica. In our models, Ge is readily incorporated at the ends of silica forming from silicic acid condensation, but this prevents further silica polymerization. Our ‘Ge-capping’ model is supported by observations from loricate choanoflagellates. Ge exposure terminates costal strip synthesis and lorica formation, resulting in disruption to cytokinesis and fatal build-up of silicic acid. Applying the Ge-capping model to other siliceous organisms explains the general toxicity of Ge and identifies potential protective responses in metalloid uptake and sensing. This can improve the design of new silica biomaterials, and further our understanding of silicon metabolism. PMID:27655668

  3. Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results

    Pulci Olivia

    2010-01-01

    Full Text Available Abstract Actually, most of the electric energy is being produced by fossil fuels and great is the search for viable alternatives. The most appealing and promising technology is photovoltaics. It will become truly mainstream when its cost will be comparable to other energy sources. One way is to significantly enhance device efficiencies, for example by increasing the number of band gaps in multijunction solar cells or by favoring charge separation in the devices. This can be done by using cells based on nanostructured semiconductors. In this paper, we will present ab-initio results of the structural, electronic and optical properties of (1 silicon and germanium nanoparticles embedded in wide band gap materials and (2 mixed silicon-germanium nanowires. We show that theory can help in understanding the microscopic processes important for devices performances. In particular, we calculated for embedded Si and Ge nanoparticles the dependence of the absorption threshold on size and oxidation, the role of crystallinity and, in some cases, the recombination rates, and we demonstrated that in the case of mixed nanowires, those with a clear interface between Si and Ge show not only a reduced quantum confinement effect but display also a natural geometrical separation between electron and hole.

  4. Novel two-dimensional silicon and germanium allotropes: a first-principles study

    Gimbert, Florian; Lee, Chi-Cheng; Friedlein, Rainer; Fleurence, Antoine; Yamada-Takamura, Yukiko; Ozaki, Taisuke

    2014-03-01

    Graphene has been extensively studied but its integration into Si-based device technologies is difficult. It has been recently predicted by first-principles calculations that freestanding silicene and germanene, the counterparts of graphene made of Si and Ge atoms respectively, have graphene-like electronic structure with a low buckled structure. So far, the models predicted by first-principles calculations were not able to describe completely the experimental results. These difficulties tend to suggest a more complex phase diagram for freestanding silicene or for silicene on a substrate than the simple buckled phase. We report for the first time a novel two-dimensional silicon and germanium allotropes, with a structure similar of that of MoS2 layer. After investigating a large range of lattice constants by first-principles calculations with OpenMX code, we show that this structure is the ground state for freestanding two-dimensional silicon and germanium layers instead of the usually considered low buckled silicene and germanene.

  5. Thermodynamic calculations of self- and hetero-diffusion parameters in germanium

    Saltas, V., E-mail: vsaltas@chania.teicrete.gr; Vallianatos, F.

    2015-08-01

    In the present work, the diffusion coefficients of n- and p-type dopants (P, As, Sb, Al) and self-diffusion in crystalline germanium are calculated from the bulk elastic properties of the host material based on the cBΩ thermodynamic model. The calculated diffusion coefficients as a function of temperature and the activation enthalpies prove to be in full agreement with the reported experimental results. Additional point defect parameters such as activation entropy, activation volume and activation Gibbs free energy are also calculated for each diffusing element. The pressure dependence of self-diffusion coefficients in germanium is also verified at high temperatures (876 K–1086 K), in agreement with reported results ranging from ambient pressure up to 600 MPa and is further calculated at pressures up to 3 GPa, where the phase transition to Ge II occurs. - Highlights: • Calculation of diffusivities of n- and p-type dopants in Ge from elastic properties. • Calculation of point defect parameters according to the cBΩ thermodynamic model. • Prediction of the pressure dependence of self-diffusion coefficients in Ge.

  6. Modifying the band gap and optical properties of Germanium nanowires by surface termination

    Legesse, Merid; Fagas, Giorgos; Nolan, Michael

    2017-02-01

    Semiconductor nanowires, based on silicon (Si) or germanium (Ge) are leading candidates for many ICT applications, including next generation transistors, optoelectronics, gas and biosensing and photovoltaics. Key to these applications is the possibility to tune the band gap by changing the diameter of the nanowire. Ge nanowires of different diameter have been studied with H termination, but, using ideas from chemistry, changing the surface terminating group can be used to modulate the band gap. In this paper we apply the generalised gradient approximation of density functional theory (GGA-DFT) and hybrid DFT to study the effect of diameter and surface termination using -H, -NH2 and -OH groups on the band gap of (001), (110) and (111) oriented germanium nanowires. We show that the surface terminating group allows both the magnitude and the nature of the band gap to be changed. We further show that the absorption edge shifts to longer wavelength with the -NH2 and -OH terminations compared to the -H termination and we trace the origin of this effect to valence band modifications upon modifying the nanowire with -NH2 or -OH. These results show that it is possible to tune the band gap of small diameter Ge nanowires over a range of ca. 1.1 eV by simple surface chemistry.

  7. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-09-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths.

  8. Germanium-tin interdiffusion in strained Ge/GeSn multiple-quantum-well structure

    Wang, Wei; Dong, Yuan; Zhou, Qian; Tok, Eng Soon; Yeo, Yee-Chia

    2016-06-01

    The thermal stability and germanium-tin (Ge-Sn) interdiffusion properties were studied in epitaxial Ge/GeSn multiple-quantum-well (MQW) structure. No obvious interdiffusion was observed for annealing temperatures of 300 °C or below, while observable interdiffusion occurred for annealing temperatures of 380 °C and above. High-resolution x-ray diffraction was used to obtain the interdiffusion coefficient by analyzing the decrease rate of Ge/GeSn periodic satellite peaks. The interdiffusion coefficient is much higher, and the activation enthalpy of 1.21 eV is substantially lower in Ge/GeSn MQW structure than that previously reported in silicon-germanium (Si-Ge) systems. When the annealing temperature is increased to above 500 °C, Ge-Sn interdiffusion becomes severe. Some small pits appear on the surface, which should be related to Sn out-diffusion to the Ge cap layer, followed by Sn desorption from the top surface. This work provides insights into the Ge-Sn interdiffusion and Sn segregation behaviors in Ge/GeSn MQW structure, and the thermal budget that may be used for fabrication of devices comprising Ge/GeSn heterostructures.

  9. Perovskite/germanium tandem: A potential high efficiency thin film solar cell design

    Zi, Wei; Ren, Xiaodong; Ren, Xianpei; Wei, Qinbo; Gao, Fei; Liu, Shengzhong Frank

    2016-12-01

    Perovskite absorbs from ultraviolet (UV) to ∼800 nm, and germanium covers to 1800 nm, the combination shows excellent match in terms of solar spectrum-splitting. The optical properties of CH3NH3PbI3-xClx perovskite and single-crystalline germanium (c-Ge) tandem solar cell on a special designed substrate with triangular grating are analyzed and discussed. The finite difference time domain (FDTD) approach is used to solve the Maxwell's equations in three dimensions rigorously. By optimizing the absorption layer thickness, the current match between the top and the bottom component cells is achieved using very thin films as thin as 1500 nm. By controlling the thickness of perovskite and c-Ge to 750 nm each, high short circuit current density (Jsc) of the tandem solar cell is achieved to as high as 23.70 mA/cm2. The perovskite/c-Ge tandem thin film cell design is capable of a potential efficiency 24.88% based on the simulation.

  10. ZnO decorated germanium nanoparticles as anode materials in Li-ion batteries

    Kim, Tae-Hee; Park, Song Yi; Lee, Tack Ho; Jeong, Jaeki; Kim, Dong Suk; Swihart, Mark T.; Song, Hyun-Kon; Kim, Jin Young; Kim, Seongbeom

    2017-03-01

    Germanium exhibits high charge capacity and high lithium diffusivity, both are the key requirements for electrode materials in high performance lithium ion batteries (LIBs). However, high volume expansion and segregation from the electrode during charge–discharge cycling have limited use of germanium in LIBs. Here, we demonstrate that ZnO decorated Ge nanoparticles (Ge@ZnO NPs) can overcome these limitations of Ge as an LIB anode material. We produced Ge NPs at high rates by laser pyrolysis of GeH4, then coated them with solution phase synthesized ZnO NPs. Half-cell tests revealed dramatically enhanced cycling stability and higher rate capability of Ge@ZnO NPs compared to Ge NPs. Enhancements arise from the core–shell structure of Ge@ZnO NPs as well as production of metallic Zn from the ZnO layer. These findings not only demonstrate a new surface treatment for Ge NPs, but also provide a new opportunity for development of high-rate LIBs.

  11. Carbon nanotube nanoelectrode arrays

    Ren, Zhifeng; Lin, Yuehe; Yantasee, Wassana; Liu, Guodong; Lu, Fang; Tu, Yi

    2008-11-18

    The present invention relates to microelectode arrays (MEAs), and more particularly to carbon nanotube nanoelectrode arrays (CNT-NEAs) for chemical and biological sensing, and methods of use. A nanoelectrode array includes a carbon nanotube material comprising an array of substantially linear carbon nanotubes each having a proximal end and a distal end, the proximal end of the carbon nanotubes are attached to a catalyst substrate material so as to form the array with a pre-determined site density, wherein the carbon nanotubes are aligned with respect to one another within the array; an electrically insulating layer on the surface of the carbon nanotube material, whereby the distal end of the carbon nanotubes extend beyond the electrically insulating layer; a second adhesive electrically insulating layer on the surface of the electrically insulating layer, whereby the distal end of the carbon nanotubes extend beyond the second adhesive electrically insulating layer; and a metal wire attached to the catalyst substrate material.

  12. Array Antenna Limitations

    Jonsson, B L G; Hussain, N

    2013-01-01

    This letter defines a physical bound based array figure of merit that provides a tool to compare the performance of both single and multi-band array antennas with respect to return-loss, thickness of the array over the ground-plane, and scan-range. The result is based on a sum-rule result of Rozanov-type for linear polarization. For single-band antennas it extends an existing limit for a given fixed scan-angle to include the whole scan-range of the array, as well as the unit-cell structure in the bound. The letter ends with an investigation of the array figure of merit for some wideband and/or wide-scan antennas with linear polarization. We find arrays with a figure of merit >0.6 that empirically defines high-performance antennas with respect to this measure.

  13. Pacific Array (Transportable Broadband Ocean Floor Array)

    Kawakatsu, Hitoshi; Ekstrom, Goran; Evans, Rob; Forsyth, Don; Gaherty, Jim; Kennett, Brian; Montagner, Jean-Paul; Utada, Hisashi

    2016-04-01

    Based on recent developments on broadband ocean bottom seismometry, we propose a next generation large-scale array experiment in the ocean. Recent advances in ocean bottom broadband seismometry1, together with advances in the seismic analysis methodology, have enabled us to resolve the regional 1-D structure of the entire lithosphere/asthenosphere system, including seismic anisotropy (azimuthal, and hopefully radial), with deployments of ~15 broadband ocean bottom seismometers (BBOBSs). Having ~15 BBOBSs as an array unit for a 2-year deployment, and repeating such deployments in a leap-frog way or concurrently (an array of arrays) for a decade or so would enable us to cover a large portion of the Pacific basin. Such efforts, not only by giving regional constraints on the 1-D structure beneath Pacific ocean, but also by sharing waveform data for global scale waveform tomography, would drastically increase our knowledge of how plate tectonics works on this planet, as well as how it worked for the past 150 million years. International collaborations is essential: if three countries/institutions participate this endeavor together, Pacific Array may be accomplished within five-or-so years.

  14. Equation of State, Nonlinear Elastic Response, and Anharmonic Properties of Diamond-Cubic Silicon and Germanium: First-Principles Investigation

    Wang, Chenju; Gu, Jianbing; Kuang, Xiaoyu; Xiang, Shikai

    2015-06-01

    Nonlinear elastic properties of diamond-cubic silicon and germanium have not been investigated sufficiently to date. Knowledge of these properties not only can help us to understand nonlinear mechanical effects but also can assist us to have an insight into the related anharmonic properties, so we investigate the nonlinear elastic behaviour of single silicon and germanium by calculating their second- and third-order elastic constants. All the results of the elastic constants show good agreement with the available experimental data and other theoretical calculations. Such a phenomenon indicates that the present values of the elastic constants are accurate and can be used to further study the related anharmonic properties. Subsequently, the anharmonic properties such as the pressure derivatives of the second-order elastic constants, Grüneisen constants of long-wavelength acoustic modes, and ultrasonic nonlinear parameters are explored. All the anharmonic properties of silicon calculated in the present work also show good agreement with the existing experimental results; this consistency not only reveals that the calculation method of the anharmonic properties is feasible but also illuminates that the anharmonic properties obtained in the present work are reliable. For the anharmonic properties of germanium, since there are no experimental result and other theoretical data till now, we hope that the anharmonic properties of germanium first offered in this work would serve as a reference for future studies.

  15. Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium

    Jobson, K.W.; Wells, J.P.R.; Schropp, R.E.I.; Vinh, N.Q.; Dijkhuis, J.I.

    2008-01-01

    We report on picosecond, time-resolved measurements of the vibrational relaxation and decay pathways of the Si–H and Ge–H stretching modes in hydrogenated amorphous silicon-germanium thin films (a-SiGe:H). It is demonstrated that the decay of both modes has a nonexponential shape, attributable to th

  16. Infrared transient grating measurements of the dynamics of hydrogen local mode vibrations in amorphous silicon-germanium

    Jobson, K. W.; Wells, J. P. R.; Schropp, R. E. I.; Vinh, N. Q.; Dijkhuis, J. I.

    2008-01-01

    We report on picosecond, time-resolved measurements of the vibrational relaxation and decay pathways of the Si-H and Ge-H stretching modes in hydrogenated amorphous silicon-germanium thin films (a-SiGe: H). It is demonstrated that the decay of both modes has a nonexponential shape, attributable to t

  17. Radial position of single-site gamma-ray interactions from a parametric pulse shape analysis of germanium detector signals

    Orrell, J L; Cooper, M W; Kephart, J D; Seifert, C E; Orrell, John L.; Aalseth, Craig E.; Cooper, Matthew W.; Kephart, Jeremy D.; Seifert, Carolyn E.

    2007-01-01

    Pulse shape analysis of germanium gamma-ray spectrometer signals can yield information on the radial position of individual gamma-ray interactions within the germanium crystal. A parametric pulse shape analysis based on calculation of moments of the reconstructed current pulses from a closed-ended coaxial germanium detector is used to preferentially select single-site gamma-ray interactions. The double escape peak events from the 2614.5 keV gamma-ray of 208-Tl are used as a training set to optimize the single-site event selection region in the pulse shape parameter space. A collimated source of 320.1 keV gamma-rays from 51-Cr is used to scan different radial positions of the same semi-coaxial germanium detector. The previously trained single-site selection region is used to preferentially identify the single-site photoelectric absorption events from the 320.1 keV full-energy peak. From the identified events, a comparison of the pulse shape parameter space distributions between different scan positions allows ...

  18. Monte Carlo uncertainty analysis of germanium detector response to gamma-rays with energies below 1 MeV

    Maleka, PP; Maucec, M

    2005-01-01

    Monte Carlo method was used to simulate the pulse-height response function of high-precision germanium (HPGe) detector for photon energies below 1 MeV. The calculations address the uncertainty estimation due to inadequate specifications of source positioning and to variations in the detector's physi

  19. Equation of state, nonlinear elastic response, and anharmonic properties of diamond-cubic silicon and germanium. First-principles investigation

    Wang, Chenju [Sichuan Univ., Chengdu (China). Inst. of Atomic and Molecular Physics; Institute of Fluid Physics, Sichuan (China). National Key Laboratory of Shock Wave and Detonation Physics; Gu, Jianbing [Institute of Fluid Physics, Sichuan (China). National Key Laboratory of Shock Wave and Detonation Physics; Sichuan Univ., Chengdu (China). College of Physical Science and Technology; Kuang, Xiaoyu [Sichuan Univ., Chengdu (China). Inst. of Atomic and Molecular Physics; Xiang, Shikai [Institute of Fluid Physics, Sichuan (China). National Key Laboratory of Shock Wave and Detonation Physics

    2015-10-01

    Nonlinear elastic properties of diamond-cubic silicon and germanium have not been investigated sufficiently to date. Knowledge of these properties not only can help us to understand nonlinear mechanical effects but also can assist us to have an insight into the related anharmonic properties, so we investigate the nonlinear elastic behaviour of single silicon and germanium by calculating their second- and third-order elastic constants. All the results of the elastic constants show good agreement with the available experimental data and other theoretical calculations. Such a phenomenon indicates that the present values of the elastic constants are accurate and can be used to further study the related anharmonic properties. Subsequently, the anharmonic properties such as the pressure derivatives of the second-order elastic constants, Grueneisen constants of long-wavelength acoustic modes, and ultrasonic nonlinear parameters are explored. All the anharmonic properties of silicon calculated in the present work also show good agreement with the existing experimental results; this consistency not only reveals that the calculation method of the anharmonic properties is feasible but also illuminates that the anharmonic properties obtained in the present work are reliable. For the anharmonic properties of germanium, since there are no experimental result and other theoretical data till now, we hope that the anharmonic properties of germanium first offered in this work would serve as a reference for future studies.

  20. Experimental study of germanium adsorption on goethite and germanium coprecipitation with iron hydroxide: X-ray absorption fine structure and macroscopic characterization

    Pokrovsky, O. S.; Pokrovski, G. S.; Schott, J.; Galy, A.

    2006-07-01

    Adsorption of germanium on goethite was studied at 25 °C in batch reactors as a function of pH (1-12), germanium concentration in solution (10 -7 to 0.002 M) and solid/solution ratio (1.8-17 g/L). The maximal surface site density determined via Ge adsorption experiments at pH from 6 to 10 is equal to 2.5 ± 0.1 μmol/m 2. The percentage of adsorbed Ge increases with pH at pH Model (SCM) which implies a constant capacitance of the electric double layer and postulates the presence of two Ge complexes, >FeO-Ge(OH)30 and >FeO-GeO(OH)2-, at the goethite-solution interface. Coprecipitation of Ge with iron oxy(hydr)oxides formed during Fe(II) oxidation by atmospheric oxygen or by Fe(III) hydrolysis in neutral solutions led to high Ge incorporations in solid with maximal Ge/Fe molar ratio close to 0.5. The molar Ge/Fe ratio in precipitated solid is proportional to that in the initial solution according to the equation (Ge/Fe) solid = k × (Ge/Fe) solution with 0.7 ⩽ k ⩽ 1.0. The structure of adsorbed and coprecipitated Ge complexes was further characterized using XAFS spectroscopy. In agreement with previous data on oxyanions adsorption on goethite, bi-dentate bi-nuclear surface complexes composed of tetrahedrally coordinated Ge attached to the corners of two adjacent Fe octahedra represent the dominant contribution to the EXAFS signal. Coprecipitated samples with Ge/Fe molar ratios >0.1, and samples not aged in solution (hydroxide at Ge/Fe molar ratio ⩽0.0001. These conditions are likely to be met in many superficial aquatic environments at the contact of anoxic groundwaters with surficial oxygenated solutions. Adsorption and coprecipitation of Ge with solid Fe oxy(hydr)oxides and organo-mineral colloids and its consequence for Ge/Si fractionation and Ge geochemical cycle are discussed.

  1. Integrated avalanche photodiode arrays

    Harmon, Eric S.

    2015-07-07

    The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

  2. Focal plane array with modular pixel array components for scalability

    Kay, Randolph R; Campbell, David V; Shinde, Subhash L; Rienstra, Jeffrey L; Serkland, Darwin K; Holmes, Michael L

    2014-12-09

    A modular, scalable focal plane array is provided as an array of integrated circuit dice, wherein each die includes a given amount of modular pixel array circuitry. The array of dice effectively multiplies the amount of modular pixel array circuitry to produce a larger pixel array without increasing die size. Desired pixel pitch across the enlarged pixel array is preserved by forming die stacks with each pixel array circuitry die stacked on a separate die that contains the corresponding signal processing circuitry. Techniques for die stack interconnections and die stack placement are implemented to ensure that the desired pixel pitch is preserved across the enlarged pixel array.

  3. Analysis of VCSEL Array Module Using a Simple Microlens Array

    Hen-Wai; Tsao; Shyh-Lin; Tsao

    2003-01-01

    A simple microlens array is designed between VCSEL array and fiber array for integration of array module. We increase the optical coupling efficiency from -32.057 dBm to -0.9054 dBm by using our designed microlens array.

  4. Analysis of VCSEL Array Module Using a Simple Microlens Array

    Wen-Ming Cheng; Hen-Wai Tsao; Shyh-Lin Tsao

    2003-01-01

    A simple microlens array is designed between VCSEL array and fiber array for integration of array module. We increase the optical coupling efficiency from-32.057 dBm to-0.9054 dBm by using our designed microlens array.

  5. Characteristics of Signals Originating near the Lithium-Diffused N+ Contact of High Purity Germanium P-Type Point Contact Detectors

    Aguayo, E. [Pacific Northwest National Laboratory (PNNL); Amman, M. [Lawrence Berkeley National Laboratory (LBNL); Avignone, F. T. [University of South Carolina/ORNL; Barabash, A.S. [Institute of Theoretical & Experimental Physics, Moscow, Russia; Barton, P. J. [Lawrence Berkeley National Laboratory (LBNL); Beene, James R [ORNL; Bertrand Jr, Fred E [ORNL; Boswell, M. [Los Alamos National Laboratory (LANL); Brudanin, V. [Joint Institute for Nuclear Research, Dubna, Russia; Busch, M. [Duke University; Chan, Y-D [Lawrence Berkeley National Laboratory (LBNL); Christofferson, C. D. [South Dakota School of Mines & Technology, Rapid City, SD; Collar, Juan I. [University of Chicago; Combs, D. C. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Cooper, Reynold J [ORNL; Detwiler, J.A. [Lawrence Berkeley National Laboratory (LBNL); Doe, P. J. [University of Washington; Efremenko, Yuri [University of Tennessee (UTK) and Oak Ridge National Laboratory (ORNL); Egorov, V. [Joint Institute for Nuclear Research, Dubna, Russia; Ejiri, H. [Osaka University; Elliott, S. R. [Los Alamos National Laboratory (LANL); Esterline, J. [Duke University; Fast, J.E. [Pacific Northwest National Laboratory (PNNL); Fields, N. [University of Chicago; Finnerty, P. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Fraenkle, F. M. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Galindo-Uribarri, Alfredo {nmn} [ORNL; Gehman, V. M. [Los Alamos National Laboratory (LANL); Giovanetti, G. K. [Univ, of North Carolina & Triangle Universities Nucl. Lab - Durham, NC; Green, M. P. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Guiseppe, V.E. [University of South Dakota; Gusey, K. [Joint Institute for Nuclear Research, Dubna, Russia; Hallin, A. L. [University of Alberta, Edmonton, Canada; Hazama, R. [Osaka University; Henning, R. [Univ, of North Carolina & Triangle Universities Nucl. Lab - Durham, NC; Hoppe, E.W. [Pacific Northwest National Laboratory (PNNL); Horton, M. [South Dakota School of Mines & Technology, Rapid City, SD; Howard, S. [South Dakota School of Mines and Technology; Howe, M. A. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Johnson, R. A. [University of Washington, Seattle; Keeter, K.J. [Black Hills State University, Spearfish, SD; Kidd, M. F. [Los Alamos National Laboratory (LANL); Knecht, A. [University of Washington, Seattle; Kochetov, O. [Joint Institute for Nuclear Research, Dubna, Russia; Konovalov, S.I. [Institute of Theoretical & Experimental Physics, Moscow, Russia; Kouzes, R. T. [Pacific Northwest National Laboratory (PNNL); LaFerriere, B. D. [Pacific Northwest National Laboratory (PNNL); Leon, J. [University of Washington, Seattle; Leviner, L. E. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Loach, J.C. [Lawrence Berkeley National Laboratory (LBNL); Looker, Q. [Lawrence Berkeley National Laboratory (LBNL); Luke, P.N. [Lawrence Berkeley National Laboratory (LBNL); MacMullin, S. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Marino, M. G. [University of Washington, Seattle; Martin, R.D. [Lawrence Berkeley National Laboratory (LBNL); Merriman, J. H. [Pacific Northwest National Laboratory (PNNL); Miller, M. L. [University of Washington, Seattle; Mizouni, L. [PPNL/Univ. of South Carolina; Nomachi, M. [Osaka University; Orrell, John L. [Pacific Northwest National Laboratory (PNNL); Overman, N. R. [Pacific Northwest National Laboratory (PNNL); Perumpilly, G. [University of South Dakota; Phillips II, D. G. [University of North Carolina / Triangle Universities Nuclear Lababoratory, Durham; Poon, A.W.P. [Lawrence Berkeley National Laboratory (LBNL); et al.

    2013-01-01

    A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Experiments that operate germanium detectors with a very low energy threshold may benefit from the methods presented herein.

  6. Characteristics of Signals Originating Near the Lithium-Diffused N+ Contact of High Purity Germanium P-Type Point Contact Detectors

    Aguayo, E; Avignone, F T; Barabash, A S; Barton, P J; Beene, J R; Bertrand, F E; Boswell, M; Brudanin, V; Busch, M; Chan, Y-D; Christofferson, C D; Collar, J I; Combs, D C; Cooper, R J; Detwiler, J A; Doe, P J; Efremenko, Yu; Egorov, V; Ejiri, H; Elliott, S R; Esterline, J; Fast, J E; Fields, N; Finnerty, P; Fraenkle, F M; Galindo-Uribarri, A; Gehman, V M; Giovanetti, G K; Green, M P; Guiseppe, V E; Gusey, K; Hallin, A L; Hazama, R; Henning, R; Hoppe, E W; Horton, M; Howard, S; Howe, M A; Johnson, R A; Keeter, K J; Kidd, M F; Knecht, A; Kochetov, O; Konovalov, S I; Kouzes, R T; LaFerriere, B D; Leon, J; Leviner, L E; Loach, J C; Looker, Q; Luke, P N; MacMullin, S; Marino, M G; Martin, R D; Merriman, J H; Miller, M L; Mizouni, L; Nomachi, M; Orrell, J L; Overman, N R; Perumpilly, G; Phillips, D G; Poon, A W P; Radford, D C; Rielage, K; Robertson, R G H; Ronquest, M C; Schubert, A G; Shima, T; Shirchenko, M; Snavely, K J; Steele, D; Strain, J; Timkin, V; Tornow, W; Varner, R L; Vetter, K; Vorren, K; Wilkerson, J F; Yakushev, E; Yaver, H; Young, A R; Yu, C -H; Yumatov, V

    2012-01-01

    A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quantify the contribution from this source of background is introduced. Experiments that operate germanium detectors with a very low energy threshold may benefit from the methods presented herein.

  7. Toward a photoconducting semiconductor RF optical fiber antenna array.

    Davis, R; Rice, R; Ballato, A; Hawkins, T; Foy, P; Ballato, J

    2010-09-20

    Recently, optical fibers comprising a crystalline semiconductor core in a silica cladding have been successfully drawn by a conventional drawing process. These fibers are expected to exhibit a photoconductive response when illuminated by photons more energetic than the band gap of the core. In the photoconducting state, such a fiber can be expected to support driven RF currents so as to function as an antenna element, much as a plasma antenna. In this paper, we report the first device-related results on a crystalline semiconductor core optical fiber potentially useful in a photoconducting optical fiber antenna array; namely, optically induced changes to the electrical conductivity of a glass-clad germanium-core optical fiber. Since DC photoconduction measurements were masked by a photovoltaic effect, RF measurements at 5 MHz were used to determine the magnitude of the induced photoconductive effect. The observed photoconductivity, though not large in the present experiment, was comparable to that measured for the bulk crystals from which the fibers were drawn. The absorbed pumping light generated photo-carriers, thereby transforming the core from a dielectric material to a conductor. This technology could thus enable a class of transient antenna elements useful in low observable and reconfigurable antenna array applications.

  8. Comparison of ultrasonic-assisted and regular leaching of germanium from by-product of zinc metallurgy.

    Zhang, Libo; Guo, Wenqian; Peng, Jinhui; Li, Jing; Lin, Guo; Yu, Xia

    2016-07-01

    A major source of germanium recovery and also the source of this research is the by-product of lead and zinc metallurgical process. The primary purpose of the research is to investigate the effects of ultrasonic assisted and regular methods on the leaching yield of germanium from roasted slag containing germanium. In the study, the HCl-CaCl2 mixed solution is adopted as the reacting system and the Ca(ClO)2 used as the oxidant. Through six single factor (leaching time, temperature, amount of Ca(ClO)2, acid concentration, concentration of CaCl2 solution, ultrasonic power) experiments and the comparison of the two methods, it is found the optimum collective of germanium for ultrasonic-assisted method is obtained at temperature 80 °C for a leaching duration of 40 min. The optimum concentration for hydrochloric acid, CaCl2 and oxidizing agent are identified to be 3.5 mol/L, 150 g/L and 58.33 g/L, respectively. In addition, 700 W is the best ultrasonic power and an over-high power is adverse in the leaching process. Under the optimum condition, the recovery of germanium could reach up to 92.7%. While, the optimum leaching condition for regular leaching method is same to ultrasonic-assisted method, except regular method consume 100 min and the leaching rate of Ge 88.35% is lower about 4.35%. All in all, the experiment manifests that the leaching time can be reduced by as much as 60% and the leaching rate of Ge can be increased by 3-5% with the application of ultrasonic tool, which is mainly thanks to the mechanical action of ultrasonic.

  9. Self-aligned metal double-gate junctionless p-channel low-temperature polycrystalline-germanium thin-film transistor with thin germanium film on glass substrate

    Hara, Akito; Nishimura, Yuya; Ohsawa, Hiroki

    2017-03-01

    Low-temperature (LT) polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) are viable contenders for use in the backplanes of flat-panel displays and in systems-on-glass because of their superior electrical properties compared with silicon and oxide semiconductors. However, LT poly-Ge shows strong p-type characteristics. Therefore, it is not easy to reduce the leakage current using a single-gate structure such as a top-gate or bottom-gate structure. In this study, self-aligned planar metal double-gate p-channel junctionless LT poly-Ge TFTs are fabricated on a glass substrate using a 15-nm-thick solid-phase crystallized poly-Ge film and aluminum-induced lateral metallization source-drain regions (Al-LM-SD). A nominal field-effect mobility of 19 cm2 V-1 s-1 and an on/off ratio of 2 × 103 were obtained by optimizing the Al-LM-SD on a glass substrate through a simple, inexpensive LT process.

  10. Solar array deployment mechanism

    Calassa, Mark C.; Kackley, Russell

    1995-05-01

    This paper describes a Solar Array Deployment Mechanism (SADM) used to deploy a rigid solar array panel on a commercial spacecraft. The application required a deployment mechanism design that was not only lightweight, but also could be produced and installed at the lowest possible cost. This paper covers design, test, and analysis of a mechanism that meets these requirements.

  11. Array for detecting microbes

    Andersen, Gary L.; DeSantis, Todd D.

    2014-07-08

    The present embodiments relate to an array system for detecting and identifying biomolecules and organisms. More specifically, the present embodiments relate to an array system comprising a microarray configured to simultaneously detect a plurality of organisms in a sample at a high confidence level.

  12. Photovoltaic array loss mechanisms

    Gonzalez, Charles

    1986-10-01

    Loss mechanisms which come into play when solar cell modules are mounted in arrays are identified. Losses can occur either from a reduction in the array electrical performance or with nonoptimal extraction of power from the array. Electrical performance degradation is caused by electrical mismatch, transmission losses from cell surface soiling and steep angle of reflectance, and electrical losses from field wiring resistance and the voltage drop across blocking diodes. The second type of loss, concerned with the operating points of the array, can involve nonoptimal load impedance and limiting the operating envelope of the array to specific ranges of voltage and current. Each of the loss mechanisms are discussed and average energy losses expected from soiling, steep reflectance angles and circuit losses are calculated.

  13. Microfabricated ion trap array

    Blain, Matthew G.; Fleming, James G.

    2006-12-26

    A microfabricated ion trap array, comprising a plurality of ion traps having an inner radius of order one micron, can be fabricated using surface micromachining techniques and materials known to the integrated circuits manufacturing and microelectromechanical systems industries. Micromachining methods enable batch fabrication, reduced manufacturing costs, dimensional and positional precision, and monolithic integration of massive arrays of ion traps with microscale ion generation and detection devices. Massive arraying enables the microscale ion traps to retain the resolution, sensitivity, and mass range advantages necessary for high chemical selectivity. The reduced electrode voltage enables integration of the microfabricated ion trap array with on-chip circuit-based rf operation and detection electronics (i.e., cell phone electronics). Therefore, the full performance advantages of the microfabricated ion trap array can be realized in truly field portable, handheld microanalysis systems.

  14. THE PATHOGENESIS OF EXPERIMENTAL MODEL OF MITOCHONDRIAL MYOPATHY INDUCED BY GERMANIUM DIOXIDE

    李晓东; 高枫; 陈清棠

    2001-01-01

    Objective. The purpose of the study was to build up an animal model of mitochondrial myopathy in order to analyse the pathogenesis of the disease.Methods. The skeletal muscles from Wistar rats treated with germanium dioxide for 24 weeks were analysed by histopathologic and electron-microscopic studies. A quantitative analysis was carried out in mitochondrial DNAs of these samples. The biological function of the model was determined.``Results. An animal model of mitochondrial myopathy was built up, in which oxygen free radicals were increased and mitochondrial DNA copies were decreased contrasted with controls.``Conclusion. It suggested that environmental toxin may play a role in the pathogenesis of mitochondrial myopathy. The increase of oxygen free radicals is an important link causing the disease.

  15. THE PATHOGENESIS OF EXPERIMENTAL MODEL OF MITOCHONDRIAL MYOPATHY INDUCED BY GERMANIUM DIOXIDE

    李晓东; 高枫; 陈清棠

    2001-01-01

    Objective. The purpose of the study was to build up an animal model of mitochondrial myopathy in order to analyse the pathogenesis of the disease. Methods. The skeletal muscles from Wistar rats treated with germanium dioxide for 24 weeks were analysed by histopathologic and electron-microscopic studies. A quantitative analysis was carried out in mitochondrial DNAs of these samples. The biological function of the model was determined. Results. An animal model of mitochondrial myopathy was built up, in which oxygen free radicals were increased and mitochondrial DNA copies were decreased contrasted with controls. Conclusion. It suggested that environmental toxin may play a role in the pathogenesis of mitochondrial myopathy. The increase of oxygen free radicals is an important link causing the disease.

  16. Influence of silicon dangling bonds on germanium thermal diffusion within SiO{sub 2} glass

    Barba, D.; Martin, F.; Ross, G. G. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Cai, R. S.; Wang, Y. Q. [The Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China); Demarche, J.; Terwagne, G. [LARN, Centre de Recherche en Physique de la Matière et du Rayonnement (PMR), University of Namur (FUNDP), B-5000 Namur (Belgium); Rosei, F. [INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel-Boulet, Varennes, Québec J3X 1S2 (Canada); Center for Self-Assembled Chemical Structures, McGill University, Montreal, Quebec H3A 2K6 (Canada)

    2014-03-17

    We study the influence of silicon dangling bonds on germanium thermal diffusion within silicon oxide and fused silica substrates heated to high temperatures. By using scanning electron microscopy and Rutherford backscattering spectroscopy, we determine that the lower mobility of Ge found within SiO{sub 2}/Si films can be associated with the presence of unsaturated SiO{sub x} chemical bonds. Comparative measurements obtained by x-ray photoelectron spectroscopy show that 10% of silicon dangling bonds can reduce Ge desorption by 80%. Thus, the decrease of the silicon oxidation state yields a greater thermal stability of Ge inside SiO{sub 2} glass, which could enable to considerably extend the performance of Ge-based devices above 1300 K.

  17. Study of the inactive layer of a germanium detector: experimental and Monte Carlo simulation treatments

    Zevallos-Chavez, Juan Y.; Pires, Carlos Augusto; Zahn, Guilherme Soares [Instituto de Pesquisas Energeticas e Nucleares (IPEN), Sao Paulo, SP (Brazil)]. E-mail: juan@if.usp.br; Genezini, Frederico Antonio [Centro Regional de Ciencias Nucleares (CRCN), Recife, PE (Brazil)). E-mail: Cruz, Manoel Tiago F. da (Sao Paulo Univ., SP (Brazil). Inst. de Fisica

    2005-07-01

    The detection efficiency of a Germanium detector was measured in the energy range of 80 keV up to 1 MeV. A model function to fit the efficiency data was used, containing an absorbing window factor. The results were compared with a Monte Carlo simulation of the photon interactions where, the nominal dimensions were varied in order to check the low-energy behavior of the efficiency curve. The Monte Carlo results showed to be in good agreement with the experimental ones when the nominal dimensions of the crystal, except for its dead layer thickness, were used. This difference in the dead layer was attributed to its non-uniformity. (author)

  18. Bulk and Surface Event Identification in p-type Germanium Detectors

    Yang, L T; Jia, L P; Jiang, H; Li, J; Lin, F K; Lin, S T; Liu, S K; Ma, J L; Sharma, V; Singh, L; Singh, M K; Soma, A K; Yang, S W; Wang, L; Wang, Q; Wong, H T; Yue, Q; Zhao, W

    2016-01-01

    The p-type point-contact germanium detectors, due to its sub-keV sensitivities and low internal radioactivity background, are demonstrated to be competitive tools for light dark matter WIMPs searches and may have potential applications in neutrino physics. These detectors exhibit anomalous surface behavior, which has been characterized and dealt with in previous analysis. However, the analysis method rely on spectral shape assumptions and must use external calibration sources. In this report, we purpose an improved method, where in situ data could be used as calibration sources. Data from CDEX-1 and TEXONO experiments will be re-examined and the results are shown to be consistent with both analysis.

  19. The impact of neutral impurity concentration on charge drift mobility in germanium

    Mei, H; Wang, G -J; Yang, G

    2016-01-01

    We report a new result of the neutral impurity scattering of electrons and holes that has impact on the charge drift mobility in high purity germanium crystals at 77 Kelvin. The charge carrier concentration, mobility and resistivity are measured by Hall Effect system at 77 Kelvin. We investigated the contribution to the total charge drift mobility from ionized impurity scattering, lattice scattering, and neutral impurity scattering with the best theoretical models and experimental data. Several samples with measured Hall mobility from the grown crystals are used for this investigation. With the measured Hall mobility and ionized impurity concentration as well as the theoretical models, we calculated the neutral impurity concentration by the Matthiessen's rule. As a result, the distributions of the neutral impurity concentrations with respect to the radius of the crystals are obtained. Consequently, we demonstrate that neutral impurity scattering is a significant contribution to the charge drift mobility, whic...

  20. A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity

    Shumei, Lai; Danfeng, Mao; Zhiwei, Huang; Yihong, Xu; Songyan, Chen; Cheng, Li; Wei, Huang; Dingliang, Tang

    2016-09-01

    Plasma treatment and 10% NH4OH solution rinsing were performed on a germanium (Ge) surface. It was found that the Ge surface hydrophilicity after O2 and Ar plasma exposure was stronger than that of samples subjected to N2 plasma exposure. This is because the thin GeO x film formed on Ge by O2 or Ar plasma is more hydrophilic than GeO x N y formed by N2 plasma treatment. A flat (RMS direct wafer bonding. Project supported by the Key Project of Natural Science Foundation of China (No. 61534005), the National Science Foundation of China (No. 61474081), the National Basic Research Program of China (No. 2013CB632103), the Natural Science Foundation of Fujian Province (No. 2015D020), and the Science and Technology Project of Xiamen City (No. 3502Z20154091).

  1. Measurement of the dead layer thickness in a p-type point contact germanium detector

    Jiang, Hao; Yue, Qian; Li, Yu-Lan; Kang, Ke-Jun; Li, Yuan-Jing; Li, Jin; Lin, Shin-Ted; Liu, Shu-Kui; Ma, Hao; Ma, Jing-Lu; Su, Jian; Tsz-King Wong, Henry; Yang, Li-Tao; Zhao, Wei; Zeng, Zhi

    2016-09-01

    A 994 g mass p-type PCGe detector has been deployed during the first phase of the China Dark matter EXperiment, aiming at direct searches for light weakly interacting massive particles. Measuring the thickness of the dead layer of a p-type germanium detector is an issue of major importance since it determines the fiducial mass of the detector. This work reports a method using an uncollimated 133Ba source to determine the dead layer thickness. The experimental design, data analysis and Monte Carlo simulation processes, as well as the statistical and systematic uncertainties are described. A dead layer thickness of 1.02 mm was obtained based on a comparison between the experimental data and the simulated results. Supported by National Natural Science Foundation of China (10935005, 10945002, 11275107, 11175099)

  2. Strained silicon/silicon germanium heterojunction n-channel metal oxide semiconductor field effect transistors

    Olsen, S H

    2002-01-01

    Investigations into the performance of strained silicon/silicon-germanium (Si/SiGe) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) have been carried out. Theoretical predictions suggest that use of a strained Si/SiGe material system with advanced material properties compared with conventional silicon allows enhanced MOSFET device performance. This study has therefore investigated the practical feasibility of obtaining superior electrical performance using a Si/SiGe material system. The MOSFET devices consisted of a strained Si surface channel and were fabricated on relaxed SiGe material using a reduced thermal budget process in order to preserve the strain. Two batches of strained Si/SiGe devices fabricated on material grown by differing methods have been analysed and both showed good transistor action. A correlation of electrical and physical device data established that the electrical device behaviour was closely related to the SiGe material quality, which differed depending on growt...

  3. Long-Running-Time (T{=}0.45 K) Germanium Bolometer for Far Infrared Spectroscopy

    Satoh, Naoki; Tanaka, Yasumoto; Nagasaka, Keigo

    1990-01-01

    A long-running-time (T{=}0.45 K) germanium bolometer which has a compact charcoal adsorption pump with a novel 3He gas condenser has been constructed. The refrigerator provides continuous cooling of the bolometer element at 0.45 K for 24-hour measurements of spectra in the range 2 to 40 cm-1. Utilizing this bolometer system, transmission spectroscopy has been carried out successively, maintaining the temperature of the sample below 40 K and that of the bolometer element below 1.5 K without a thermal cycle. This experimental setup is essential for obtaining a reproducible spectrum of MEM(TCNQ)2. Thus, each resultant spectrum has good reproducibility even after one-week-long experiments.

  4. Enhanced shower formation in aligned thick germanium crystals and discrimination against charged hadrons

    Baurichter, A. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Kirsebom, K. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Medewaldt, R. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Mikkelsen, U. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Moeller, S. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Uggerhoej, E. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Worm, T. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Elsener, K. [European Organization for Nuclear Research, Geneva (Switzerland); Ballestrero, S. [Dipartimento di Fisica, University of Florence and INFN Sezione di Firenze, Largo E. Fermi 2, 50125 Florence (Italy); Sona, P. [Dipartimento di Fisica, University of Florence and INFN Sezione di Firenze, Largo E. Fermi 2, 50125 Florence (Italy); Romano, J. [Dipartimento di Fisica, University La Sapienza-Rome and INFN Sezione di Roma, P.le A. Moro 5, 00185 Rome (Italy)

    1995-11-01

    The distribution of the energy released in a thin silicon detector placed on the downstream side of a thick germanium single crystal bombarded with a 150 GeV electron or pion beam along directions close to the left angle 110 right angle axis or along random directions has been investigated. In view of a possible application to very high energy gamma ray astronomy and particle physics, the intrinsic capability of such a device to reject, on the basis of energy discrimination, unwanted events due to charged hadrons together with the resulting loss of efficiency for the detection of showers initiated by high energy electrons, is determined as a function of the chosen energy threshold. (orig.).

  5. Positron annihilation studies of fluorine-vacancy complexes in phosphorus- and fluorine-implanted germanium

    Edwardson, C. J.; Coleman, P. G.; El Mubarek, H. A. W.

    2014-03-01

    The formation of FnV2 complexes, with n = 5 ± 1, near the end-of-range damage region in germanium implanted with 30 keV phosphorus and 40 keV fluorine ions, after annealing to 400 °C, has been observed using variable-energy positron annihilation spectroscopy in conjunction with secondary ion mass spectrometry. Phosphorus ions were implanted at 6 × 1013 and 1015, F at 1015 cm-2. Complexes—at lower concentrations—have also been observed at shallower depths in samples implanted with P at 1015 cm-2. The complexes break up and their components diffuse away at 450 and 500 °C for the higher and lower P dose samples, respectively.

  6. Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

    D'Costa, Vijay Richard; Yeo, Yee-Chia

    2015-02-01

    Spectroscopic ellipsometry with photon energy in the 0.045-0.65 eV range was used to investigate germanium samples implanted with 30 keV phosphorus ions and annealed at 700 °C. The infrared response of implanted layers is dominated by free carrier absorption which is modeled using a Drude oscillator. The carrier concentration profiles were modeled using an error function, and compared with those obtained by electrochemical capacitance-voltage profiling and secondary ion mass spectrometry. In the flat region of the carrier concentration profile, average carrier concentration and mobility of 1.40 × 1019 cm-3 and 336 cm2V-1s-1, respectively, were obtained. A phosphorus diffusivity of ˜1.2 × 10-13 cm2/s was obtained. The mobility versus carrier concentration relationships obtained for the implanted samples are close to the empirical relationship for bulk Ge.

  7. Measurement of the cosmogenic activation of germanium detectors in EDELWEISS-III

    Armengaud, E; Augier, C; Benoît, A; Bergé, L; Billard, J; Blümer, J; de Boissière, T; Broniatowski, A; Camus, P; Cazes, A; Chapellier, M; Charlieux, F; De Jésus, M; Dumoulin, L; Eitel, K; Foerster, N; Gascon, J; Giuliani, A; Gros, M; Hehn, L; Heuermann, G; Jin, Y; Juillard, A; Kéfélian, C; Kleifges, M; Kozlov, V; Kraus, H; Kudryavtsev, V A; Le-Sueur, H; Marnieros, S; Navick, X -F; Nones, C; Olivieri, E; Pari, P; Paul, B; Piro, M -C; Poda, D; Queguiner, E; Rozov, S; Sanglard, V; Schmidt, B; Scorza, S; Siebenborn, B; Tcherniakhovski, D; Vagneron, L; Weber, M; Yakushev, E

    2016-01-01

    We present a measurement of the cosmogenic activation in the germanium cryogenic detectors of the EDELWEISS III direct dark matter search experiment. The decay rates measured in detectors with different exposures to cosmic rays above ground are converted into production rates of different isotopes. The measured production rates in units of nuclei/kg/day are 82 $\\pm$ 21 for $^3$H, 2.8 $\\pm$ 0.6 for $^{49}$V, 4.6 $\\pm$ 0.7 for $^{55}$Fe, and 106 $\\pm$ 13 for $^{65}$Zn. These results are the most accurate for these isotopes. A lower limit on the production rate of $^{68}$Ge of 74 nuclei/kg/day is also presented. They are compared to model predictions present in literature and to estimates calculated with the ACTIVIA code.

  8. Germanium adsorption on Ag(111): an AES-LEED and STM study.

    Oughaddou, H; Mayne, A; Aufray, B; Bibérian, J P; Le Lay, G; Ealet, B; Dujardin, G; Kara, A

    2007-09-01

    The adsorption of germanium on Ag(111) has been investigated using Scanning Tunneling Microscopy, Auger Electron Spectroscopy and Low Energy Electron Diffraction. From the shape of the Auger peak-to-peak versus time curves, we deduce that at room temperature the growth mode is nearly layer-by-layer at least for the first two layers. In the sub-monolayer range, the growth starts by the formation of a (mean square root of 3 x mean square root of 3)R30 degrees surface superstructure which is complete at 1/3 monolayer coverage. Beyond this coverage a rectangular c(mean square root of 3 x 7) superstructure is observed. STM images reveal that this last reconstruction is formed by an ordered arrangement of self-assembled Ge tetramers giving rise to a surprising undulation of the surface.

  9. Determination of the Peltier Coefficient of Germanium in a Vertical Bridgeman-Stockbarger Furnace

    Weigel, Michaela E. K.; Matthiesen, David H.

    1997-01-01

    The Peltier effect is the fundamental mechanism that makes interface demarcation through current pulsing possible. If a method for calculating the necessary current density for effective demarcation is to be developed, it will be necessary to know the value of the Peltier coefficient. This study determined experimentally the value of the Peltier coefficient for gallium-doped germanium by comparing the change in average growth rates between current-on and current-off periods. Current-on and current-off layer thickness measurements were made using differential interference contrast microscopy and atomic force microscopy. It was found that the Joule and Thomson effects could not be neglected. Peltier coefficients calculated from the experimental data with an analysis that accounts for Joule, Thomson, and Peltier effects yielded an average value for the Peltier coefficient of 0.076 +/- 0.015 V.

  10. Synthesis and characterization of nano/micro structured crystalline germanium dioxide with novel morphology

    WANG XiaoYan; DUAN Lian; DONG GuiFang; WEI Peng; WANG Wei; WANG LiDuo; QIU Yong

    2009-01-01

    Nano/micro-structured germanium oxide (GeO2) was prepared using GeCl4 and KOH by a simple solution method in alkalic alcoholic solution.Different morphologies of GeO2 were obtained by changing the reaction conditions.The effects of the reaction time,the concentration of the reactants,the reaction temperature and the dispersant upon the morphology of the deposited GeO2 have been investigated.The products were detected by X-ray diffraction (XRD),atomic force microscope (AFM),scanning electron microscope (SEM) and transmission electron microscope (TEM).Novel cross-like structures were obtained by using n-butylamine as the dispersant.The formation of the cross-like structures has been discussed and a solution-liquid-solid (SLS) mechanism was proposed.

  11. Radiation electromagnetic effect in germanium crystals under high-energy. cap alpha. -particle irradiation

    Kikoin, I.K.; Babichenko, V.S.; Kikoin, L.I.; Lazarev, S.D.; Rzhanov, A.E.; Filippov, V.I.

    1984-05-01

    Results of experimental investigation into radiation electromagnetic effect (REM) in samples of germanium crystals under approximately 40 MeV ..cap alpha..-particle irradiation in a cyclotron are presented. A high level of excitation, volumetric character of generation of non-equilibrium carriers and formation of defects as well as the form of their spatial distribution are shown to result in some peculiarities of the EMF of the REM effect on the particle flux, fluence and sample parameters. Agreement of theoretical calculations, conducted with account of specificity of ..cap alpha..-particle interaction with a crystal, and experimental data is obtained. It is revealed that the REM effect can be applied in obtaining data on spatial distribution of non-equilibrium carrier concentrations along the particle trajectory in the crystal.

  12. Radiation-electromagnetic effect in germanium crystals irradiated with high-energy. cap alpha. particles

    Kikoin, I.K.; Babichenko, V.S.; Kikoin, L.I.; Lazarev, S.D.; Rzhanov, A.E.; Filippov, V.I.

    1984-05-01

    An experimental investigation was made of the radiation-electromagnetic effect in germanium crystals irradiated in a cyclotron with ..cap alpha.. particles of energies up to 40 MeV. The high excitation rate, the bulk nature of generation of nonequilibrium carriers and defects, and their spatial distributions gave rise to several special features in the dependence of the emf due to the radiation-electromagnetic effect on the particle flux, fluence, and parameters of samples. Theoretical calculations carried out allowing for the specific nature of the interaction of ..cap alpha.. particles with crystals agreed well with the experimental results. The radiation-electromagnetic effect could be used to obtain information on the nature of the spatial distribution of the density of nonequilibrium carriers along the trajectory of a particle in a crystal.

  13. Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

    Tani, Kazuki; Saito, Shin-ichi; Oda, Katsuya; Miura, Makoto; Wakayama, Yuki; Okumura, Tadashi; Mine, Toshiyuki; Ido, Tatemi

    2017-03-01

    Germanium (Ge) (111) fins of 320 nm in height were successfully fabricated using a combination of flattening sidewalls of a silicon (Si) fin structure by anisotropic wet etching with tetramethylammonium hydroxide, formation of thin Ge fins by selective Si oxidation in SiGe layers, and enlargement of Ge fins by Ge homogeneous epitaxial growth. The excellent electrical characteristics of Ge(111) fin light-emitting diodes, such as an ideality factor of 1.1 and low dark current density of 7.1 × 10‑5 A cm‑2 at reverse bias of ‑2 V, indicate their good crystalline quality. A tensile strain of 0.2% in the Ge fins, which originated from the mismatch of the thermal expansion coefficients between Ge and the covering SiO2 layers, was expected from the room-temperature photoluminescence spectra, and room-temperature electroluminescence corresponding to the direct band-gap transition was observed from the Ge fins.

  14. Wetting Angle and Surface Tension of Germanium Melts on Different Substrate Materials

    Kaiser, N.; Croell, A.; Szofran, F. R.; Benz, K. W.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    The sessile drop technique has been used to measure the wetting angle and the surface tension of molten germanium (Ge) on various substrate materials. Sapphire, fused silica, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AlN, Si3N4, and CVD diamond were used as substrate materials. In addition, the effects of different cleaning procedures and surface treatments on the wetting behavior were investigated. The highest wetting angles with values around 170 deg. were found for pBN substrates under active vacuum or with a slight overpressure of 5N Argon or forming gas (2% Hydrogen in 5N Argon). The measurement of the surface tension and its temperature dependence for Ge under a forming gas atmosphere resulted in gamma(T) = 591 - 0.077 (T-T(sub m).

  15. Advanced characterization of carrier profiles in germanium using micro-machined contact probes

    Clarysse, T.; Konttinen, M.; Parmentier, B.;

    2012-01-01

    The accurate determination of the sheet resistance and carrier depth profile, i.e. active dopant profile, of shallow junction isolated structures involving new high mobility materials, such as germanium, is a crucial topic for future CMOS development. In this work, we discuss the capabilities...... of new concepts based on micro machined, closely spaced contact probes (10 μm pitch). When using four probes to perform sheet resistance measurements, a quantitative carrier profile extraction based on the evolution of the sheet resistance versus depth along a beveled surface is obtained. Considering...... the use of only two probes, a spreading resistance like setup is obtained with small spacing and drastically reduced electrical contact radii (~10 nm) leading to a substantial reduction of the correction factors which are normally required for converting spreading resistance profiles. We demonstrate...

  16. Analysis of proton single-particle properties of zinc and germanium isotopes

    Bespalova, O. V.; Ermakova, T. A.; Klimochkina, A. A.; Romanovsky, E. A.; Spasskaya, T. I.

    2014-12-01

    Experimental proton single-particle energies in the vicinity of the Fermi energy for stable zinc and germanium isotopes are analyzed on the basis the dispersive optical model. The values found for the parameters of the dispersive optical potential are corrected with the aim of matching the total number of protons that is calculated with the aid of the function of Bardeen-Cooper-Schrieffer theory for the occupation probability for single-particle orbits with the charge number Z of the nucleus. The parameters of the dispersive optical potential are extrapolated on the basis of physically motivated arguments to the region of unstable isotopes in which the number N ranges between 34 and 50, and single-particle spectra are predicted by means of calculations with these parameters.

  17. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

    Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Khai Loke, Wan; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia

    2016-09-01

    We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W-1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K-1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

  18. Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices

    A. Bag

    2011-01-01

    Full Text Available Metal-oxide-semiconductor (MOS capacitors with tri-layer structure consisting of rf magnetron sputtered grown germanium (Ge nanocrystals (NCs and silicon dioxide (SiO2 layers sandwiched between thermally grown tunnel and sputtered grown cap oxide layers of SiO2 were fabricated on p-Si substrates. Plane view transmission electron micrographs revealed the formation of spherically shaped and uniformly distributed Ge NCs. The optical and electronic characteristics of tri-layer structures were studied through photoluminescence (PL spectroscopy and capacitance-voltage (C-V measurements, respectively. Frequency dependent electrical properties of the structures have been studied. The optical emission characteristics support the confinement of the carriers in Ge NCs embedded in oxide matrices. An anticlockwise hysteresis in C-V characteristics suggests electron injection and trapping in Ge NCs.

  19. Measurement of 238U muonic x-rays with a germanium detector setup

    Esch, Ernst I [Los Alamos National Laboratory; Jason, Andrew [Los Alamos National Laboratory; Miyadera, Haruo [Los Alamos National Laboratory; Hoteling, Nathan J [Los Alamos National Laboratory; Heffner, Robert H [Los Alamos National Laboratory; Adelmann, Andreas [PAUL SCHERRER INSTITUT; Stocki, Trevor [HEALTH CANADA; Mitchell, Lee [NAVAL RESEARCH LAB

    2009-01-01

    In the field of nuclear non-proliferation muon interactions with materials are of great interest. This paper describes an experiment conducted at the Paul Scherrer Institut (PSI) in Switzerland where a muon beam is stopped in a uranium target. The muons produce characteristic muonic x-rays. Muons will penetrate shielding easily and the produced characteristic x-rays can be used for positive isotope identification. Furthermore, the x-rays for uranium isotopes lie in the energy range of 6-7 MeV, which allows them to have an almost optimal mean free path in heavy shielding such as lead or steel. A measurement was conducted at PSI to prove the feasibility of detecting muonic x-rays from a large sample of depleted uranium (several kilograms) with a germanium detector. In this paper, the experimental setup and analysis of the measurement itself is presented.

  20. Analysis of proton single-particle properties of zinc and germanium isotopes

    Bespalova, O. V., E-mail: besp@sinp.msu.ru; Ermakova, T. A.; Klimochkina, A. A.; Romanovsky, E. A.; Spasskaya, T. I. [Moscow State University, Skobeltsyn Institute of Nuclear Physics (Russian Federation)

    2014-12-15

    Experimental proton single-particle energies in the vicinity of the Fermi energy for stable zinc and germanium isotopes are analyzed on the basis the dispersive optical model. The values found for the parameters of the dispersive optical potential are corrected with the aim of matching the total number of protons that is calculated with the aid of the function of Bardeen-Cooper-Schrieffer theory for the occupation probability for single-particle orbits with the charge number Z of the nucleus. The parameters of the dispersive optical potential are extrapolated on the basis of physically motivated arguments to the region of unstable isotopes in which the number N ranges between 34 and 50, and single-particle spectra are predicted by means of calculations with these parameters.

  1. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.

    Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-15

    A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform.

  2. Size Dependent Pore Formation in Germanium Nanowires Undergoing Reversible Delithiation Observed by In Situ TEM

    Lu, Xiaotang; He, Yang; Mao, Scott X.; Wang, Chong-min; Korgel, Brian A.

    2016-12-22

    Germanium (Ge) nanowires coated with an amorphous silicon (Si) shell undergoing lithiation and delithiation were studied using in situ transmission electron microscopy (TEM). Delithiation creates pores in nanowires with diameters larger than ~25 nm, but not in smaller diameter nanowires. The formation of pores in Ge nanowires undergoing delithiation has been observed before in in situ TEM experiments, but there has been no indication that a critical diameter exists below which pores do not form. Pore formation occurs as a result of fast lithium diffusion compared to vacancy migration. We propose that a short diffusion path for vacancies to the nanowire surface plays a role in limiting pore formation even when lithium diffusion is fast.

  3. Di-μ-oxido-bis[bis(diisopropylacetamidinato-κN;κ2N,N′-germanium(IV

    Frank T. Edelmann

    2013-12-01

    Full Text Available The title compound, [Ge2(C8H17N24O2], crystallizes with imposed twofold symmetry, which allows the monodentate amidinate ligands to be arranged in a cisoid fashion. The independent Ge—O distances within the central Ge2O2 ring, which is essentially planar (r.m.s. deviation = 0.039 Å, are 1.7797 (8 and 1.8568 (8 Å. The germanium centres adopt a distorted trigonal–bipyramidal geometry, being coordinated by the two O atoms and by one bidentate and one monodentate amidinate ligand (three N atoms. One N-isopropyl group is disordered over two positions; these are mutually exclusive because of `collisions' between symmetry-equivalent methyl groups and thus each has 0.5 occupancy.

  4. A precise method to determine the activity of a weak neutron source using a germanium detector

    Duke, M J M; Krauss, C B; Mekarski, P; Sibley, L

    2015-01-01

    A standard high purity germanium detector (HPGe) was used to determine the neutron activity of a weak americium-beryllium (AmBe) neutron source. Gamma rays were created through 27Al(n,n'), 27Al(n,gamma) and 1H(n,gamma) reactions induced by the neutrons on aluminum and acrylic disks. A Monte Carlo simulation was developed to model the efficiency of the detector system. The activity of our neutron source was determined to be 305.6 +/- 4.9 n/s. The result is consistent for the different gamma rays and was verified using additional simulations and measurements of the 4483 keV gamma ray produced directly from the AmBe source.

  5. Germanium-silicon alloy and core-shell nanocrystals by gas phase synthesis.

    Mehringer, Christian; Kloner, Christian; Butz, Benjamin; Winter, Benjamin; Spiecker, Erdmann; Peukert, Wolfgang

    2015-03-12

    In this work we present a novel route to synthesize well defined germanium-silicon alloy (GexSi1-x) and core-shell nanocrystals (NCs) employing monosilane (SiH4) and monogermane (GeH4) as precursors in a continuously operated two-stage hot-wall aerosol reactor setup. The first hot-wall reactor stage (HWR I) is used to produce silicon (Si) seed particles from SiH4 pyrolysis in Argon (Ar). The resulting seeding aerosol is fed into the second reactor stage (HWR II) and a mixture of SiH4 and GeH4 is added. The ratio of the precursors in the feed, their partial pressures, the synthesis temperature in HWR II and the overall pressure are varied depending on the desired morphology and composition. Alloy particle production is achieved in the heterogeneous surface reaction regime, meaning that germanium (Ge) and Si are deposited on the seed surface simultaneously. The NCs can be synthesized with any desired composition, whilst maintaining a mean diameter around 30 nm with a geometric standard deviation (GSD) around 1.25. The absorption behavior and the related fundamental optical band gap energy in dependence on the alloy composition are exemplarily presented. They prove the possibility to tailor NC properties for electronical and opto-electronical applications. In the homogeneous gas phase reaction regime facetted Ge-Si core-shell structures are accessible. The Ge deposition on the seeds precedes the Si deposition due to different gas phase reaction kinetics of the precursors. The Si layer grows epitaxially on the Ge core and is around 5 nm thick.

  6. In-depth TEM characterization of block copolymer pattern transfer at germanium surfaces

    Cummins, Cian; Collins, Timothy W.; Kelly, Roisin A.; McCarthy, Eoin K.; Morris, Michael A.

    2016-12-01

    Dry plasma etching for the pattern transfer of mask features is fundamental to semiconductor processing and the development of device and electrically conducting elements becomes more challenging as features reach the deep nanoscale regime. In this work, high resolution transmission electron microscopy (TEM) coupled with energy dispersive x-ray (EDX) characterization were used to analyze the pattern transfer of graphoepitaxially aligned block copolymer (BCP) features to germanium (Ge) substrates as a function of time. The BCP patterns were converted into metal oxide hardmasks in order to affect good aspect ratios of the transferred features. An unusual interface layer between metal oxide nanowires and the germanium-on-insulator substrate was observed. EDX analysis shows that the origin of this interface layer is a result of the presence of a negative tone e-beam resist material, HSQ (hydrogen silsesquioxane). HSQ was employed as a guiding material to align line-space features of poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP) BCP with 16 nm half-pitch topography. Additionally, the existence of a metal oxide layer (from the initial PS-b-P4VP film) is also shown through ex situ TEM and EDX characterization. Three dimensional modeling of features is also provided giving a unique insight into the arrangement and structure of BCP features prior to and after the pattern transfer process. The results presented in this article highlight the accuracy of high resolution electron microscopy and elemental mapping of BCP generated on-chip etch masks to observe and understand through-film features affecting pattern transfer.

  7. Piezoelectric transducer array microspeaker

    Carreno, Armando Arpys Arevalo

    2016-12-19

    In this paper we present the fabrication and characterization of a piezoelectric micro-speaker. The speaker is an array of micro-machined piezoelectric membranes, fabricated on silicon wafer using advanced micro-machining techniques. Each array contains 2n piezoelectric transducer membranes, where “n” is the bit number. Every element of the array has a circular shape structure. The membrane is made out four layers: 300nm of platinum for the bottom electrode, 250nm or lead zirconate titanate (PZT), a top electrode of 300nm and a structural layer of 50

  8. P systems with array objects and array rewriting rules

    K.G. Subramanian; R. Saravanan; M. Geethalakshmi; P. Helen Chandra; M. Margenstern

    2007-01-01

    Array P systems were introduced by Pǎun Gh. which is linking the two areas of membrane computing and picture grammars. Puzzle grammars were introduced by us for generating connected picture arrays in the two-dimensional plane, motivated by the problem of tiling the plane. On the other hand, incorporating into arrays the developmental type of generation used in the well-known biologically motivated L systems, Siromoney and Siromoney proposed a very general rectangular array generating model, called extended controlled tabled L array system (ECTLAS). In this paper we introduce two variations of the array P system, called BPG array P system and parallel array P system. The former has in the regions array objects and basic puzzle grammar rules (BPG), which are a specific kind of puzzle grammar rules. In the latter, the regions have rectangular array objects and tables of context-free rules. We examine these two types of P systems for their array generative power.

  9. 非晶硅锗电池性能的调控研究%Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell

    刘伯飞; 白立沙; 魏长春; 孙建; 侯国付; 赵颖; 张晓丹

    2013-01-01

    采用射频等离子体增强化学气相沉积技术,研究了非晶硅锗薄膜太阳电池。针对非晶硅锗薄膜材料的本身特性,通过调控硅锗合金中硅锗的比例,实现了对硅锗薄膜太阳电池中开路电压和短路电流密度的分别控制。借助于本征层硅锗材料帯隙梯度的设计,获得了可有效用于多结叠层电池中的非晶硅锗电池。%In this paper, we study hydrogenated amorphous silicon germanium thin film solar cells prepared by the radio frequency plasma-enhanced chemical vapor deposition. In the light of the inherent characteristics of hydrogenated amorphous silicon germanium mate-rial, the modulation of the germanium/silicon ratio in silicon germanium alloys can separately control open circuit voltage (Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cells. By the structural design of band gap profiling in the amorphous silicon germanium intrinsic layer, hydrogenated amorphous silicon germanium thin film solar cells, which can be used efficiently as the component cell of multi-junction solar cells, are obtained.

  10. The Measurable Effects of Germanium Loaded into the Pusher of a Pushered Single Shell Capsule Designed for the National Ignition Facility

    Tipton, Robert; Baker, Kevin; Casey, Daniel; Dewald, Eduard; Graziani, Frank; MacLaren, Steve; Nikroo, Abass; Pino, Jesse; Ralph, Joe; Remington, Bruce; Sacks, Ryan; Salmonson, Jay; Smalyuk, Vladimir

    2016-10-01

    Germanium loaded pushered single shells (PSS) have been designed as a vehicle to study the effects of turbulent mixing between the DT fuel and a pusher which is not fully ionized. This is intended as a surrogate for the high-Z mixing expected in future double-shell ignition capsules. These PSS experiments will be diagnosed by loading deuterium along with the germanium into the GDP pusher and filling the capsule with a mixture of tritium and hydrogen. In such CD mix experiments, the measured number of DT neutrons along with the inferred ion temperature from the time-of-flight thermal broadening provides detailed information about the annular mixing of the fuel and the pusher. This paper will compare the expected DT mix signals from capsules loaded with germanium to control capsules fired without any germanium. Leading turbulent mix models predict the germanium loaded capsules and no-germanium control capsules will produce significantly different results. This work was performed under the auspices of the U.S. Department of Energy by LLNL under contract DE-AC52-07NA27344,LLNS, LLC.

  11. Development of amorphous silicon-germanium-alloys for stacked solar cells; Entwicklung von amorphen Silizium-Germanium-Legierungen fuer den Einsatz in Stapelsolarzellen

    Lundszien, D.

    2001-01-01

    To obtain high efficiency silicon based thin film solar cells, the concept of stacked solar cells is routinely used. The use of component cells with different optical bandgaps provides a better utilization of the solar spectrum. In a stacked cell structure, a high quality narrow bandgap material is needed for the active layer of the bottom cell. Amorphous silicon-germanium-alloys (a-SiGe:H) have been successfully employed because of their tunable optical bandgap E{sub G} between 1.8 eV (a-Si:H) and 1.1 eV (a-Ge:H). Considerable effort has been put into the development of a-SiGe:H. Still, with increasing Ge content, the material shows a characteristic deterioration of its electronic properties, like an exponential increase of the defect density, thus counteracting the gain in absorption obtained for higher Ge contents. It is the defect density which has the dominant influence on carrier transport and cell efficiency by affecting the mobility lifetime product and the electric field in the devices. The performance of a-SiGe:H pin solar cells with a wide range of Ge contents i.e. a wide range of optical band gaps (E{sub G}=1.3 to 1.6 eV) are compared. It is demonstrated how the deterioration of the material properties can be overcome by careful adjustment of the device design and the use of highly reflective ZnO/Ag back contacts. (orig.)

  12. Protein Functionalized Nanodiamond Arrays

    Liu YL

    2010-01-01

    Full Text Available Abstract Various nanoscale elements are currently being explored for bio-applications, such as in bio-images, bio-detection, and bio-sensors. Among them, nanodiamonds possess remarkable features such as low bio-cytotoxicity, good optical property in fluorescent and Raman spectra, and good photostability for bio-applications. In this work, we devise techniques to position functionalized nanodiamonds on self-assembled monolayer (SAMs arrays adsorbed on silicon and ITO substrates surface using electron beam lithography techniques. The nanodiamond arrays were functionalized with lysozyme to target a certain biomolecule or protein specifically. The optical properties of the nanodiamond-protein complex arrays were characterized by a high throughput confocal microscope. The synthesized nanodiamond-lysozyme complex arrays were found to still retain their functionality in interacting with E. coli.

  13. Alkaline shift effect on the uptake of germanium by algae, Chlorella ellipsoideae, Oscillatoria sp. and Spirulina platensis

    Yanagimoto, M. (National Food Research Inst., Ibaraki, Japan); Saitoh, H.; Kakimoto, N.

    1983-01-01

    The uptake of germanium (Ge) by microalgae was interesting because of a therapeutic effect of organic germanium. In the case of blue green algae, Oscillatoria sp. and Spirulina platensis, satisfactory amounts of Ge were accumulated in the cells, where the pH of the culture was shifted to 11.8 or 12.3, after sufficient growth. These algae could hardly grow in a culture at pH 11.8 or pH 12.3. In the case of Chlorella ellipsoideae, a good result could not be obtained. But a relatively high uptake of Ge into the cells could be obtained in the culture shifted to pH 8.6, in which the alga could hardly grow. Although the effective pHs are different, the effect of the elevated pH of the cultures can be called an alkaline shift effect from the same feature.

  14. High spatial frequency laser induced periodic surface structure formation in germanium by mid-IR femtosecond pulses

    Austin, Drake R; Lai, Yu Hang; Wang, Zhou; Zhang, Kaikai; Li, Hui; Blaga, Cosmin I; Yi, Allen Y; DiMauro, Louis F; Chowdhury, Enam A

    2016-01-01

    Formation of high spatial frequency laser induced periodic surface structures (HSFL) in germanium by femtosecond mid-IR pulses with wavelengths between $\\lambda=2.0$ and $3.6 \\; \\mathrm{\\mu m}$ was studied with varying angle of incidence and polarization. The period of these structures varied from $\\lambda/3$ to $\\lambda/8$. A modified surface-scattering model including Drude excitation and the optical Kerr effect explains spatial period scaling of HSFL across the mid-IR wavelengths. Transmission electron microscopy (TEM) shows the presence of a $30 \\; \\mathrm{n m}$ amorphous layer above the structure of crystalline germanium. Various mechanisms including two photon absorption and defect-induced amorphization are discussed as probable causes for the formation of this layer.

  15. Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

    Almuslem, A. S.; Hanna, A. N.; Yapici, T.; Wehbe, N.; Diallo, E. M.; Kutbee, A. T.; Bahabry, R. R.; Hussain, M. M.

    2017-02-01

    In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO2) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

  16. Effects of isotopic disorder on the Raman spectra of crystals: Theory and ab initio calculations for diamond and germanium

    Vast, Nathalie; Baroni, Stefano

    2000-04-01

    We present a method to study the effects of isotopic composition on the Raman spectra of crystals, in which disorder is treated exactly without resorting to any kind of mean-field approximation. The Raman cross section is expressed in terms of a suitable diagonal element of the vibrational Green's function, which is accurately and efficiently calculated using the recursion technique. This method can be used in conjunction with both semiempirical lattice-dynamical models and with first-principles interatomic force constants. We have applied our technique to diamond and germanium using the most accurate interatomic force constants presently available, obtained from density-functional perturbation theory. Our method correctly reproduces the light scattering in diamond-where isotopic effects dominates over the anharmonic ones-as well as in germanium, where anharmonic effects are larger.

  17. Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

    Almuslem, A. S.

    2017-02-14

    In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

  18. Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit

    Kim, Jeehwan; Bedell, Stephen W.; Sadana, Devendra K.

    2012-09-01

    Full activation of n-type dopant in germanium (Ge) reaching to its solid solubility has never been achieved by using ion implantation doping technique. This is because implantation of dopants always leaves defects such as vacancy and interstitials in the Ge crystal. While implantation-induced defects are electrically neutral for the most of semiconductor materials, they are electrically positive for Ge resulting in compensation of n-type dopants. In this Letter, we verified that 5 × 1019 P/cm3 is the maximum active concentration, which can be fully activated in germanium "without leaving implantation damage" per implantation/annealing cycle. The repetition of implantation and annealing of phosphorous (P) with the concentration of 5 × 1019 cm-3 leads to the activation of 1 × 1020 P/cm3 close to its solid solubility limit of 2 × 1020 P/cm3.

  19. Measurement of the low-energy quenching factor in germanium using an 88Y/Be photoneutron source

    Scholz, B. J.; Chavarria, A. E.; Collar, J. I.; Privitera, P.; Robinson, A. E.

    2016-12-01

    We employ an 88Y/Be photoneutron source to derive the quenching factor for neutron-induced nuclear recoils in germanium, probing recoil energies from a few hundred eVnr to 8.5 keVnr . A comprehensive Monte Carlo simulation of our setup is compared to experimental data employing a Lindhard model with a free electronic energy loss k and an adiabatic correction for sub -keVnr nuclear recoils. The best fit k =0.179 ±0.001 obtained using a Monte Carlo Markov chain (MCMC) ensemble sampler is in good agreement with previous measurements, confirming the adequacy of the Lindhard model to describe the stopping of few-keV ions in germanium crystals at a temperature of ˜77 K . This value of k corresponds to a quenching factor of 13.7% to 25.3% for nuclear recoil energies between 0.3 and 8.5 keVnr , respectively.

  20. Development of a segmented n-type germanium detector, and its application to astronomical gamma-ray spectroscopy

    Gehrels, N.; Cline, T. L.; Teegarden, B. J.; Tueller, J.; Leventhal, M.; Maccallum, C. J.; Ryge, P.

    1983-01-01

    Extensive calculations and simulations have shown that the instrumental background in a coaxial germanium photon detector flown at balloon altitudes or in space, can be substantially reduced by segmenting the outer contact. The contact is divided into horizontal strips around the side of the detector, giving it many characteristics similar to that of a stack of planar detectors. By choosing different segment coincidence requirements in different energy ranges, one can obtain a factor of approx. 2 increase in sensitivity to spectral lines between 40 keV and 1 MeV, compared with an unsegmented detector. The reverse electrode configuration (using n-type germanium), with the p contact outside, is preferred for this application due to its thin dead layer and resistance to radiation damage in space. A small two segment n type detector is being developed to serve as a prototype for larger multisegment devices. Results of this development effort and of detector tests are presented.

  1. Metal-optic cavity for a high efficiency sub-fF germanium photodiode on a silicon waveguide.

    Going, Ryan; Kim, Myung-Ki; Wu, Ming C

    2013-09-23

    We propose two designs of nanoscale sub-fF germanium photodiodes which are efficiently integrated with silicon waveguides. The metal-optic cavities are simulated with the finite difference time domain method and optimized using critical coupling concepts. One design is for a metal semiconductor metal photodiode with <200 aF capacitance, 39% external quantum efficiency, and 0.588 (λ/n)³ cavity volume at 1.5 µm wavelength. The second design is for a vertical p-i-n photodiode with <100 aF capacitance, 51% external quantum efficiency, and 0.804 (λ/n)³ cavity volume. Both designs make use of CMOS compatible materials germanium and aluminum metal for potential future monolithic integration with silicon photonics.

  2. Quantitative spectrographic determination of traces of germanium in lignite; Determinacion Espectrografica Cuantitativa de trazas de Germanio en Lignitos

    Martin, M.; Roca, M.

    1972-07-01

    A burning technique in a d.c. arc at 10 amp has been employed. The standards have been prepared from a natural lignite with a low germanium content. In order to enhance sensitivity, AgCl, K{sub 2}SO{sub 4}, CuF{sub 2}, Sb{sub 2}S{sub 3} and Bi{sub 2}S{sub 3} have been tested as sweeping materials. Using 2% CuF{sub 2} a detection limit of 1 ppm germanium is attainable. Bi, Cu, Sb and Sn have been studied as internal standards: the former leads to the, highest precision (1 6%). Results show good agreement with those obtained by the addition method. (Author) 6 refs.

  3. Probing lithium germanide phase evolution and structural change in a germanium-in-carbon nanotube energy storage system.

    Tang, Wei; Liu, Yanpeng; Peng, Chengxin; Hu, Mary Y; Deng, Xuchu; Lin, Ming; Hu, Jian Zhi; Loh, Kian Ping

    2015-02-25

    Lithium alloys of group IV elements such as silicon and germanium are attractive candidates for use as anodes in high-energy-density lithium-ion batteries. However, the poor capacity retention arising from volume swing during lithium cycling restricts their widespread application. Herein, we report high reversible capacity and superior rate capability from core-shell structure consisting of germanium nanorods embedded in multiwall carbon nanotubes. To understand how the core-shell structure helps to mitigate volume swings and buffer against mechanical instability, transmission electron microscopy, X-ray diffraction, and in situ (7)Li nuclear magnetic resonance were used to probe the structural rearrangements and phase evolution of various Li-Ge alloy phases during (de)alloying reactions with lithium. The results provide insights into amorphous-to-crystalline transition and lithium germanide alloy phase transformation, which are important reactions controlling performance in this system.

  4. US-ROK Action Sheet 34: Safeguards Application of a Hand-held Mechanically Cooled Germanium Spectrometer

    Dreyer, J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Burks, M. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Ham, Y. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Kwak, S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-10-20

    This report summarizes results of Action Sheet 34 - for the cooperative efforts on the field testing and evaluation of a high-resolution, hand-held, gamma-ray spectrometer, known as SPG (Spectroscopic Planar Germanium), for safeguards application such as short notice inspections, UF6 analysis, enrichment determination, and other potential applications. The Spectroscopic Planar Germanium (SPG) has been demonstrated IAEA Physical Inventory Verification (PIV) in South Korea. This field test was a success and the feedback provided by KINAC, IAEA, and national laboratory staff was used to direct efforts to improve the instrument this year. Key points in this report include measurement results from PIV, analysis of spectra with commercially available Ortec U235 and PC-FRAM, and completion of tripod and tungsten collimator and integration of user feedback.

  5. Raw data for 'Tensile Strain Engineering of Germanium Micro-Disks on Free-Standing SiO2 Beams'.

    Al-Attili, Abdelrahman

    2016-01-01

    This dataset contains the raw data for 'Tensile Strain Engineering of Germanium Micro-Disks on Free-Standing SiO2 Beams'. Summary of this dataset in the form of figures were published by the Japanese Journal of Applied Physics (JJAP), Special Issues of the International Conference on Solid-State Devices and Materials (SSDM) 2015, Sapporo, Japan.\\ud Copyright 2016 The Japan Society of Applied Physics.\\ud \\ud

  6. Refractive-index measurements of zinc germanium diphosphide at 300 and 77 K by use of a modified Michelson interferometer.

    Gillen, Glen D; Guha, Shekhar

    2004-04-01

    A method to determine the absolute refractive index of materials available in the shape of flat wafers with parallel sides by using interferometric techniques is presented. With this method, nondestructive, sample-specific measurements can be made. The method is tested by using silicon, germanium and zinc selenide, and measurements for both the ordinary and extraordinary axes of ZnGeP2 for temperatures of 300 and 77 K are reported.

  7. Thickness, Doping Accuracy, and Roughness Control in Graded Germanium Doped Ch{sub x} Micro-shells for Lmj

    Legay, G.; Theobald, M.; Barnouin, J.; Peche, E.; Bednarczyk, S.; Hermerel, C. [CEA Valduc, Dept Rech Mat Nucl, Serv Microcibles, 21 - Is-sur-Tille (France)

    2009-05-15

    In the Commissariat a l'Energie Atomique Laser Megajoule (LMJ) facility, amorphous hydrogenated carbon (a-C: H or CH{sub x}) is the nominal ablator used to achieve inertial confinement fusion experiments. These targets are filled with of fusible mixture of deuterium-tritium in order to perform ignition. The a-C: H shell is deposited on a poly-alpha-methylstyrene (PAMS) mandrel by glow discharge polymerization with trans-2-butene, hydrogen, and helium. Graded germanium doped CH{sub x} micro-shells are supposed to be more stable regarding hydrodynamic instabilities. The shells are composed of four layers for a total thickness of 180 {mu}m. The germanium gradient is obtained by doping the different a-C: H layers with the addition of tetra-methylgermanium in the gas mixture. As the achievement of ignition greatly depends on the physical properties of the shell, the thicknesses, doping concentration, and roughness must be precisely controlled. Quartz microbalances were used to perform an in situ and real-time measurement of the thickness in order to reduce the variations and so our fabrication tolerances on each layer thickness. Ex situ control of the thickness of each layer was carried out, with both optical coherent tomography and interferometry, (wall-mapper). High-quality, PAMS and a rolling system have been used to lower the low-mode roughness [root-mean-square (rms) (mode 2) {<=} 70 nm]. High modes were clearly, reduced by, coating the pan containing the shells with polyvinyl alcohol + CH{sub x} instead of polystyrene + CH{sub x} resulting in an rms ({>=}mode 10) {<=} 20 nm, which can be {<=}15 nm for the best micro-shells. The germanium concentration (0. 4 and 0. 75 at. %) in the a-CH layer is obtained by regulating the tetramethyl-germanium flow. Low range mass flow controllers have been used to improve the doping accuracy. (authors)

  8. Lung counting: comparison of detector performance with a four detector array that has either metal or carbon fibre end caps, and the effect on mda calculation.

    Ahmed, Asm Sabbir; Hauck, Barry; Kramer, Gary H

    2012-08-01

    This study described the performance of an array of high-purity Germanium detectors, designed with two different end cap materials-steel and carbon fibre. The advantages and disadvantages of using this detector type in the estimation of the minimum detectable activity (MDA) for different energy peaks of isotope (152)Eu were illustrated. A Monte Carlo model was developed to study the detection efficiency for the detector array. A voxelised Lawrence Livermore torso phantom, equipped with lung, chest plates and overlay plates, was used to mimic a typical lung counting protocol with the array of detectors. The lung of the phantom simulated the volumetric source organ. A significantly low MDA was estimated for energy peaks at 40 keV and at a chest wall thickness of 6.64 cm.

  9. Dosimetric properties of germanium doped calcium borate glass subjected to 6 MV and 10 MV X-ray irradiations

    Tengku Kamarul Bahri, T.N.H., E-mail: tnhidayah2@gmail.com [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Johor Bahru (Malaysia); Wagiran, H.; Hussin, R.; Saeed, M.A. [Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Johor Bahru (Malaysia); Hossain, I. [Department of Physics, College of Science and Arts, King Abdul Aziz University, 21911 Rabigh (Saudi Arabia); Ali, H. [Department of Radiotherapy and Oncology, Hospital Sultan Ismail, 81100 Johor Bahru (Malaysia)

    2014-10-01

    Highlights: •The TL properties of 29.9CaO–70B{sub 2}O{sub 3}: 0.1GeO{sub 2} glass has been investigated. •We exposed glass samples to 6 MV and 10 MV in a dose range of 0.5–4.0 Gy. •This glass has a potential material to be used for application in radiotherapy. -- Abstract: Germanium doped calcium borate glasses are investigated in term of thermoluminescence properties to seek their possibility to use as glass radiation dosimeter. The samples were exposed to 6 MV, and 10 MV photon beams in a dose range of 0.5–4.0 Gy. There is a single and broad thermoluminescence glow curve that exhibits its maximum intensity at about 300 °C. Linear dose response behavior has been found in this dose range for the both photon energies. Effective atomic number, TL sensitivity, and reproducibility have also been studied. It is found that the sensitivity of germanium doped sample at 6 MV is only 1.28% and it is superior to the sensitivity at 10 MV. The reproducibility of germanium doped sample is good with a percentage of relative error less than 10%. The results indicate that this glass has a potential to be used as a radiation dosimetry, especially for application in radiotherapy.

  10. BaTiO3 integration with nanostructured epitaxial (100), (110), and (111) germanium for multifunctional devices.

    Hudait, Mantu K; Zhu, Yan; Jain, Nikhil; Maurya, Deepam; Zhou, Yuan; Varghese, Ron; Priya, Shashank

    2013-11-13

    Ferroelectric-germanium heterostructures have a strong potential for multifunctional devices. Germanium (Ge) is attractive due to its higher electron and hole mobilities while ferroelectric BaTiO3 is promising due to its high relative permittivity, which can make next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. Here, we investigate the growth, structural, chemical, and band alignment properties of pulsed laser deposited BaTiO3 on epitaxial (100)Ge, (110)Ge, and (111)Ge layers. Cross-sectional transmission electron microscopy micrographs show the amorphous nature of the BaTiO3 layer and also show a sharp heterointerface between BaTiO3 and Ge. The appearance of strong Pendellösung oscillation fringes from high-resolution X-ray diffraction implies the presence of parallel and sharp heterointerfaces. The valence band offset relation of ΔEV(100) ≥ ΔEV(111) > ΔEV(110) and the conduction band offset relation of ΔE(C)(110) > ΔE(C)(111) ≥ ΔE(C)(100) on crystallographically oriented Ge offer significant advancement for designing new-generation ferroelectric-germanium-based multifunctional devices.

  11. Improving the Cycling Life of Aluminum and Germanium Thin Films for use as Anodic Materials in Li-Ion Batteries.

    Hudak, Nicholas [Dominican Univ., River Forest, IL (United States); Huber, Dale L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Gulley, Gerald [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2014-09-01

    The cycling of high-capacity electrode materials for lithium-ion batteries results in significant volumetric expansion and contraction, and this leads to mechanical failure of the electrodes. To increase battery performance and reliability, there is a drive towards the use of nanostructured electrode materials and nanoscale surface coatings. As a part of the Visiting Faculty Program (VFP) last summer, we examined the ability of aluminum oxide and gold film surface coatings to improve the mechanical and cycling properties of vapor-deposited aluminum films in lithium-ion batteries. Nanoscale gold coatings resulted in significantly improved cycling behavior for the thinnest aluminum films whereas aluminum oxide coatings did not improve the cycling behavior of the aluminum films. This summer we performed a similar investigation on vapor-deposited germanium, which has an even higher theoretical capacity per unit mass than aluminum. Because the mechanism of lithium-alloying is different for each electrode material, we expected the effects of coating the germanium surface with aluminum oxide or gold to differ significantly from previous observations. Indeed, we found that gold coatings gave only small or negligible improvements in cycling behavior of germanium films, but aluminum oxide (Al2O3) coatings gave significant improvements in cycling over the range of film thicknesses tested.

  12. Extraction separation of germanium with potassium iodide-1-propanol-germanium(Ⅳ)ternary complex%碘化钾-正丙醇-锗(Ⅳ)三元缔合物萃取分离锗

    韩金土; 司学芝; 张会杰; 马万山

    2012-01-01

    The extraction and separation behaviors of germanium by potassium iodide - 1-propanol -germanium (Ⅳ) complex and the separation conditions of some metal ions were studied. The results showed that sodium chloride could separate the 1-propanol aqueous solution into two phases. In phase separation process, the complex[GeI6,2- ][C3H7OH2+]2 formed from GeI6,2- (which was generated from germanium(Ⅳ) and potassium iodide) and protonized 1-propanol (C3H7OH2,+) could be fully extracted by 1-propanol phase. The extraction rate of germanium(Ⅳ) was higher than 98. 4% when the concentrations of 1-propanol,potassium iodide and sodium chloride were 30%(V/V) ,8. 0 × 10-3 mol/L and 0. 20 g/mL,respectively. Meanwhile,Zn2+ ,Fe2+ ,Mg2+ ,Ni2+ ,Co2+ ,Mn2+ ,Ag+ , Al3+ and Cr3+ could not be extracted,realizing the separation of germanium(Ⅳ) from these metal ions.%探讨了碘化钾-正丙醇-锗(Ⅳ)三元缔合物萃取分离锗的行为及与一些金属离子分离的条件.结果表明,氯化钠能将正丙醇的水溶液分成两相,在分相过程中,Ge(Ⅳ)与碘化钾生成的GeI62-与质子化正丙醇(C3H7OH2+)形成的缔合物[GeI62-][C3H7OH2+]2能被正丙醇相完全萃取.当正丙醇、碘化钾和氯化钠的浓度分别为30%(V/V)、8.0×10-3 mol/L、0.20 g/mL时,Ge(Ⅳ)的萃取率达到98.4%以上,Zn2+、Fe2+、Mg2+、Ni2+、Co2+、Mn2+、Ag+、Al3+和Cr3+基本不被萃取,实现了Ge(Ⅳ)与上述金属离子的分离.

  13. Evaporating metal nanocrystal arrays

    Zhang, Xue; Joy, James C.; Zhao, Chenwei; Kim, Jin Ho; Fernandes, Gustavo; Xu, J. M.; Valles, James M., Jr.

    2017-03-01

    Anodic aluminum oxide (AAO) substrates with a self-ordered triangular array of nanopores provide the means to fabricate multiple forms of nano materials, such as nanowires and nanoparticles. This study focuses on nanostructures that emerge in thin films of metals thermally evaporated onto the surface of AAO. Previous work showed that films of different evaporated metals assume dramatically different structures, e.g. an ordered triangular array of nearly monodisperse nanoparticles forms for lead (Pb) while a polycrystalline nanohoneycomb structure forms for silver (Ag). Here, we present investigations of the effects of substrate temperature and deposition angle that reveal the processes controlling the nano particle array formation. Our findings indicate that arrays form provided the grain nucleation density exceeds the pore density and the atomic mobility is high enough to promote grain coalescence. They introduce a method for producing films with anisotropic grain array structure. The results provide insight into the influence of substrate nano-morphology on thin film growth energetics and kinetics that can be harnessed for creating films with other novel nano-structures.

  14. High-Performance Silicon-Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

    Romanjek, K.; Vesin, S.; Aixala, L.; Baffie, T.; Bernard-Granger, G.; Dufourcq, J.

    2015-06-01

    Some of the energy used in transportation and industry is lost as heat, often at high-temperatures, during conversion processes. Thermoelectricity enables direct conversion of heat into electricity, and is an alternative to the waste-heat-recovery technology currently used, for example turbines and other types of thermodynamic cycling. The performance of thermoelectric (TE) materials and modules has improved continuously in recent decades. In the high-temperature range ( T hot side > 500°C), silicon-germanium (SiGe) alloys are among the best TE materials reported in the literature. These materials are based on non-toxic elements. The Thermoelectrics Laboratory at CEA (Commissariat à l'Energie Atomique et aux Energies Alternatives) has synthesized n and p-type SiGe pellets, manufactured TE modules, and integrated these into thermoelectric generators (TEG) which were tested on a dedicated bench with hot air as the source of heat. SiGe TE samples of diameter 60 mm were created by spark-plasma sintering. For n-type SiGe doped with phosphorus the peak thermoelectric figure of merit reached ZT = 1.0 at 700°C whereas for p-type SiGe doped with boron the peak was ZT = 0.75 at 700°C. Thus, state-of-the-art conversion efficiency was obtained while also achieving higher production throughput capacity than for competing processes. A standard deviation 3.6 W. An air-water heat exchanger was developed and 30 TE modules were clamped and connected electrically. The TEG was tested under vacuum on a hot-air test bench. The measured output power was 45 W for an air flow of 16 g/s at 750°C. The hot surface of the TE module reached 550°C under these conditions. Silicon-germanium TE modules can survive such temperatures, in contrast with commercial modules based on bismuth telluride, which are limited to 400°C.

  15. Pulsed laser ablation of Germanium under vacuum and hydrogen environments at various fluences

    Iqbal, Muhammad Hassan [Centre for Advanced Studies in Physics, Government College University, Lahore (Pakistan); Bashir, Shazia, E-mail: shaziabashir@gcu.edu.pk [Centre for Advanced Studies in Physics, Government College University, Lahore (Pakistan); Rafique, Muhammad Shahid [Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Dawood, Asadullah; Akram, Mahreen; Mahmood, Khaliq; Hayat, Asma; Ahmad, Riaz; Hussain, Tousif [Centre for Advanced Studies in Physics, Government College University, Lahore (Pakistan); Mahmood, Arshad [National Institute of Laser and Optronics (NILOP), Islamabad (Pakistan)

    2015-07-30

    Highlights: • Germanium targets were exposed under vacuum and H{sub 2} environment by nanosecond laser pulses. • The effect of laser fluence and ambient environment has been investigated. • The surface morphology is investigated by SEM analysis. • Raman and FTIR Spectroscopy are performed to reveal structural modification. • Electrical conductivity is probed by four probe method. - Abstract: Laser fluence and ambient environment play a significant role for the formation and development of the micro/nano-structures on the laser irradiated targets. Single crystal (1 0 0) Germanium (Ge) has been ablated under two environments of vacuum (10{sup −3} Torr) and hydrogen (100 Torr) at various fluences ranging from 4.5 J cm{sup −2} to 6 J cm{sup −2}. For this purpose KrF Excimer laser with wavelength of 248 nm, pulse duration of 18 ns and repetition rate of 20 Hz has been employed. Surface morphology has been observed by Scanning Electron Microscope (SEM). Whereas, structural modification of irradiated targets was explored by Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy. Electrical conductivity of the irradiated Ge is measured by four probe method. SEM analysis exhibits the formation of laser-induced periodic surface structures (LIPSS), cones and micro-bumps in both ambient environments (vacuum and hydrogen). The formation as well as development of these structures is strongly dependent upon the laser fluence and environmental conditions. The periodicity of LIPSS or ripples varies from 38 μm to 60 μm in case of vacuum whereas in case of hydrogen environment, the periodicity varies from 20 μm to 45 μm. The difference in number of ripples and periodicity as well as in shape and size of cones and bumps in vacuum and hydrogen is explained on the basis of confinement and shielding effect of plasma. FTIR spectroscopy reveals that no new bands are formed for laser ablated Ge under vacuum, whereas C−H stretching vibration band is

  16. Wireless Josephson Junction Arrays

    Adams, Laura

    2015-03-01

    We report low temperature, microwave transmission measurements on a wireless two- dimensional network of Josephson junction arrays composed of superconductor-insulator -superconductor tunnel junctions. Unlike their biased counterparts, by removing all electrical contacts to the arrays and superfluous microwave components and interconnects in the transmission line, we observe new collective behavior in the transmission spectra. In particular we will show emergent behavior that systematically responds to changes in microwave power at fixed temperature. Likewise we will show the dynamic and collective response of the arrays while tuning the temperature at fixed microwave power. We discuss these spectra in terms of the Berezinskii-Kosterlitz-Thouless phase transition and Shapiro steps. We gratefully acknowledge the support Prof. Steven Anlage at the University of Maryland and Prof. Allen Goldman at the University of Minnesota. Physics and School of Engineering and Applied Sciences.

  17. The Submillimeter Array

    Ho, P T P; Lo, K Y; Ho, Paul T.P.; Moran, James M.; Lo, Kwok Yung

    2004-01-01

    The Submillimeter Array (SMA), a collaborative project of the Smithsonian Astrophysical Observatory (SAO) and the Academia Sinica Institute of Astronomy and Astrophysics (ASIAA), has begun operation on Mauna Kea in Hawaii. A total of eight 6-m telescopes comprise the array, which will cover the frequency range of 180-900 GHz. All eight telescopes have been deployed and are operational. First scientific results utilizing the three receiver bands at 230, 345, and 690 GHz have been obtained and are presented in the accompanying papers.

  18. Photovoltaic array performance model.

    Kratochvil, Jay A.; Boyson, William Earl; King, David L.

    2004-08-01

    This document summarizes the equations and applications associated with the photovoltaic array performance model developed at Sandia National Laboratories over the last twelve years. Electrical, thermal, and optical characteristics for photovoltaic modules are included in the model, and the model is designed to use hourly solar resource and meteorological data. The versatility and accuracy of the model has been validated for flat-plate modules (all technologies) and for concentrator modules, as well as for large arrays of modules. Applications include system design and sizing, 'translation' of field performance measurements to standard reporting conditions, system performance optimization, and real-time comparison of measured versus expected system performance.

  19. Selecting Sums in Arrays

    Brodal, Gerth Stølting; Jørgensen, Allan Grønlund

    2008-01-01

    In an array of n numbers each of the \\binomn2+nUnknown control sequence '\\binom' contiguous subarrays define a sum. In this paper we focus on algorithms for selecting and reporting maximal sums from an array of numbers. First, we consider the problem of reporting k subarrays inducing the k larges...... an algorithm with this running time and by proving a matching lower bound. Finally, we combine the ideas and obtain an O(n· max {1,log(k/n)}) time algorithm that selects a subarray storing the k’th largest sum among all subarrays of length at least l and at most u....

  20. Effects of seed layer on the performance of microcrystalline silicon germanium solar cells

    Cao Yu; Zhang Jianjun; Li Tianwei; Huang Zhenhua; Ma Jun; Yang Xu; Ni Jian

    2013-01-01

    Using plasma enhanced chemical vapor deposition (PECVD) at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium (μc-Si1-xGex:H) i-layer.The effects of seeding processes on the growth of μc-Si 1-x Gex:H i-layers and the performance of μc-Si1-x Gex:H p-in single junction solar cells are investigated.By applying this seeding method,the μc-Si 1-xGex:H solar cell shows a significant improvement in short circuit current density (Jsc) and fill factor (FF) with an acceptable performance of blue response as a μc-Si:H solar cell even when the Ge content x increases up to 0.3.Finally,an improved efficiency of 7.05% is achieved for the μc-Sio.7Ge0.3:H solar cell.

  1. Protein patterning on polycrystalline silicon-germanium via standard UV lithography for bioMEMS applications

    Lenci, S., E-mail: silvia.lenci@gmail.com [Dipartimento di Ingegneria dell' Informazione, University of Pisa, Via G. Caruso 16, I-56122 Pisa (Italy); imec, Kapeldreef 75, Leuven B-3001 (Belgium); Tedeschi, L.; Domenici, C.; Lande, C. [Istituto di Fisiologia Clinica, CNR, via G. Moruzzi 1, Pisa I-56124 (Italy); Nannini, A.; Pennelli, G.; Pieri, F. [Dipartimento di Ingegneria dell' Informazione, University of Pisa, Via G. Caruso 16, I-56122 Pisa (Italy); Severi, S. [imec, Kapeldreef 75, Leuven B-3001 (Belgium)

    2010-10-12

    Polycrystalline silicon-germanium (poly-SiGe) is a promising structural material for the post-processing of micro electro-mechanical systems (MEMS) on top of complementary metal-oxide-semiconductor (CMOS) substrates. Combining MEMS and CMOS allows for the development of high-performance devices. We present for the first time selective protein immobilization on top of poly-SiGe surfaces, an enabling technique for the development of novel poly-SiGe based MEMS biosensors. Active regions made of 3-aminopropyl-triethoxysilane (APTES) were defined using silane deposition onto photoresist patterns followed by lift-off in organic solvents. Subsequently, proteins were covalently bound on the created APTES patterns. Fluorescein-labeled human serum albumin (HSA) was used to verify the immobilization procedure while the binding capability of the protein layer was tested by an antigen-labeled antibody pair. Inspection by fluorescence microscopy showed protein immobilization inside the desired bioactive areas and low non-specific adsorption outside the APTES pattern. Furthermore, the quality of the silane patches was investigated by treatment with 30 nm-diameter gold nanoparticles and scanning electron microscope observation. The developed technique is therefore a promising first step towards the realization of poly-SiGe based biosensors.

  2. Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science Investigation

    Volz, M. P.; Mazuruk, K.; Croll, A.

    2014-01-01

    A series of Ge Si crystal growth experiments are planned to be conducted in the Low 1-x x Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  3. An ultra-high dose of electron radiation response of Germanium Flat Fiber and TLD-100

    Alawiah, A.; Amin, Y. M.; Abdul-Rashid, H. A.; Abdullah, W. S. Wan; Maah, M. J.; Bradley, D. A.

    2017-01-01

    The thermoluminescence (TL) response of Germanium Flat Fiber (GFF) and TLD-100 irradiated with 2.5 MeV electrons for the doses up to 1 MGy were studied and compared. The aim was to evaluate the TL supralinearity response at an ultra-high dose (UHD) range and to investigate the change in kinetic parameters of the glow peaks, as the doses increases up to 1 MGy. It is found that the critical dose limit (CDL) of GFF is 5 times higher as compared to TLD-100. CDL is determined by the dose at the maximum supralinearity, f(D)max. It is also found that annealing the TLD-100 and GFF with temperature more than 400 °C is required to reset it back to its original condition, following radiation doses up to 1 MGy. It is also noticed the strange behavior of Peak 4 (TLD-100), which tends to be invisible at the lower dose (<10 kGy) and starts to be appeared at the critical dose limit of 10 kGy. This result might be an important clue to understand the behavior of TLD-100 at extremely high dose range. For both samples, it is observed that the TL intensity is not saturated within the UHD range studied.

  4. Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bands

    Jain, Abhinav; Rojas-Sanchez, Juan-Carlos; Cubukcu, Murat; Peiro, Julian; Le Breton, Jean-Christophe; Vergnaud, Céline; Augendre, Emmanuel; Vila, Laurent; Attané, Jean-Philippe; Gambarelli, Serge; Jaffrès, Henri; George, Jean-Marie; Jamet, Matthieu

    2013-04-01

    Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the electrical spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. Here we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of n-Si and n-Ge using a CoFeB/MgO tunnel contact. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from approximately 150 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with the standard spin diffusion model. More interestingly, in the case of germanium, we demonstrate a significant modulation of the spin signal by applying a back-gate voltage to the conduction channel. We also observe the inverse spin Hall effect in Ge by spin pumping from the CoFeB electrode. Both observations are consistent with spin accumulation in the Ge conduction band.

  5. Positional calibrations of the germanium double sided strip detectors for the Compton spectrometer and imager

    Lowell, A.; Boggs, S.; Chiu, J. L.; Kierans, C.; McBride, S.; Tseng, C. H.; Zoglauer, A.; Amman, M.; Chang, H. K.; Jean, P.; Lin, C. H.; Sleator, C.; Tomsick, J.; von Ballmoos, P.; Yang, C. Y.

    2016-08-01

    The Compton Spectrometer and Imager (COSI) is a medium energy gamma ray (0.2 - 10 MeV) imager designed to observe high-energy processes in the universe from a high altitude balloon platform. At its core, COSI is comprised of twelve high purity germanium double sided strip detectors which measure particle interaction energies and locations with high precision. This manuscript focuses on the positional calibrations of the COSI detectors. The interaction depth in a detector is inferred from the charge collection time difference between the two sides of the detector. We outline our previous approach to this depth calibration and also describe a new approach we have recently developed. Two dimensional localization of interactions along the faces of the detector (x and y) is straightforward, as the location of the triggering strips is simply used. However, we describe a possible technique to improve the x/y position resolution beyond the detector strip pitch of 2 mm. With the current positional calibrations, COSI achieves an angular resolution of 5.6 +/- 0.1 degrees at 662 keV, close to our expectations from simulations.

  6. Thermal Stability of Annealed Germanium-Tin Alloys Grown by Molecular Beam Epitaxy

    Bhargava, Nupur; Gupta, Jay Prakash; Faleev, Nikolai; Wielunski, Leszek; Kolodzey, James

    2017-01-01

    The thermal stability of undoped and boron-doped germanium tin (Ge1-x Sn x ) alloys grown by molecular beam epitaxy with varying composition and layer thickness was investigated. The alloys were annealed in forming gas at various temperatures up to 800°C for 1 min using rapid thermal processing, and were characterized using high-resolution x-ray diffraction and Rutherford backscattering spectrometry. It was found that the Ge1-x Sn x alloys were stable to well above the growth temperature, but the stability decreased with increasing thickness, Sn content, and doping. Ge1-x Sn x alloys with low Sn composition (x ˜ 0.025) were stable up to 700°C, and for a given Sn composition, the undoped alloys were more thermally stable than the doped alloys. As the thickness of the Ge0.975Sn0.025 alloys increased to about 950 nm, the temperature of thermal stability dropped to 500°C. As the Sn composition of the 90 nm-Ge1-x Sn x alloys increased up to x = 0.08, the temperature of thermal stability dropped to 300°C. At higher annealing temperatures, the Ge1-x Sn x alloy degraded with lower crystal quality, and a gradient in the Sn composition appeared, which may be due to Sn diffusion or segregation.

  7. Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

    Tran, Tuan T.; Alkhaldi, Huda S.; Gandhi, Hemi H.; Pastor, David; Huston, Larissa Q.; Wong-Leung, Jennifer; Aziz, Michael J.; Williams, J. S.

    2016-08-01

    Ion implantation with high ion fluences is indispensable for successful use of germanium (Ge) in the next generation of electronic and photonic devices. However, Ge readily becomes porous after a moderate fluence implant ( ˜1 ×1015 ion cm-2 ) at room temperature, and for heavy ion species such as tin (Sn), holding the target at liquid nitrogen (LN2) temperature suppresses porosity formation only up to a fluence of 2 ×1016 ion cm-2 . We show, using stylus profilometry and electron microscopy, that a nanometer scale capping layer of silicon dioxide significantly suppresses the development of the porous structure in Ge during a S n - implant at a fluence of 4.5 ×1016 ion cm-2 at LN2 temperature. The significant loss of the implanted species through sputtering is also suppressed. The effectiveness of the capping layer in preventing porosity, as well as suppressing sputter removal of Ge, permits the attainment of an implanted Sn concentration in Ge of ˜15 at.% , which is about 2.5 times the maximum value previously attained. The crystallinity of the Ge-Sn layer following pulsed-laser-melting induced solidification is also greatly improved compared with that of uncapped material, thus opening up potential applications of the Ge-Sn alloy as a direct bandgap material fabricated by an ion beam synthesis technique.

  8. Measurements of thermal characteristics in silicon germanium un-cooled micro-bolometers

    Moreno, Mario; Torres, Alfonso; Kosarev, Andrey [National Institute for Astrophysics, Optics and Electronics, P.O. Box 51 and 216, Z.P. 7200 Puebla (Mexico); Ambrosio, Roberto; Mireles, Jose [Universidad Autonoma de Ciudad Juarez, Electrical Department, Av. Del Charro 450 N, Z.P. 32310, C. J., Chihuahua (Mexico); Garcia, Maria [Benemerita Universidad Autonoma de Puebla, Physics Department, Av. San Claudio S/N Z.P. 72570 Puebla (Mexico)

    2010-04-15

    We present a study of the thermal characteristics of an infrared detector (un-cooled micro-bolometer), based on an amorphous silicon germanium film (a-Si{sub x}Ge{sub y}:H), deposited by plasma at low temperature ({proportional_to} 300 C) and compatible with the standard CMOS technology. These films have been studied due to their high performance characteristics as high activation energy (E{sub a}{approx} 0.37 eV), high temperature coefficient of resistance (TCR{approx} -0.047 K{sup -1}) and moderate room temperature conductivity ({sigma}{sub RT}{approx} 2x10{sup -5}{omega} cm), which provides a moderate pixel resistance (R{sub cell}{approx}3.5x10{sup 8}{omega}). We have used two simple methods to calculate the thermal characteristics of the micro-bolometer. The thermal conductance (G{sub th}) has been obtained from the electrical I(U) characteristics in the range where self heating due to bias is not presented. The temperature dependence of the electrical resistance and as well the temperature dependence of the thermal resistance have been obtained by measuring the I(U) characteristics in the device at different temperature values. Finally the results of both methods have been compared. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Improved WIMP-search reach of the CDMS II germanium data

    Agnese, R.; Anderson, A. J.; Asai, M.; Balakishiyeva, D.; Barker, D.; Basu Thakur, R.; Bauer, D. A.; Billard, J.; Borgland, A.; Bowles, M. A.; Brandt, D.; Brink, P. L.; Bunker, R.; Cabrera, B.; Caldwell, D. O.; Calkins, R.; Cerdeno, D. G.; Chagani, H.; Chen, Y.; Cooley, J.; Cornell, B.; Crewdson, C. H.; Cushman, Priscilla B.; Daal, M.; Di Stefano, P. C.; Doughty, T.; Esteban, L.; Fallows, S.; Figueroa-Feliciano, E.; Godfrey, G. L.; Golwala, S. R.; Hall, Jeter C.; Harris, H. R.; Hertel, S. A.; Hofer, T.; Holmgren, D.; Hsu, L.; Huber, M. E.; Jardin, D. M.; Jastram, A.; Kamaev, O.; Kara, B.; Kelsey, M. H.; Kennedy, A.; Kiveni, M.; Koch, K.; Leder, A.; Loer, B.; Lopez Asamar, E.; Lukens, P.; Mahapatra, R.; Mandic, V.; McCarthy, K. A.; Mirabolfathi, N.; Moffatt, R. A.; Oser, S. M.; Page, K.; Page, W. A.; Partridge, R.; Pepin, M.; Phipps, A.; Prasad, K.; Pyle, M.; Qiu, H.; Rau, W.; Redl, P.; Reisetter, A.; Ricci, Y.; Rogers, H. E.; Saab, T.; Sadoulet, B.; Sander, J.; Schneck, K.; Schnee, R. W.; Scorza, S.; Serfass, B.; Shank, B.; Speller, D.; Toback, D.; Upadhyayula, S.; Villano, A. N.; Welliver, B.; Wilson, J. S.; Wright, D. H.; Yang, X.; Yellin, S.; Yen, J. J.; Young, B. A.; Zhang, J.

    2015-10-31

    CDMS II data from the five-tower runs at the Soudan Underground Laboratory were reprocessed with an improved charge-pulse fitting algorithm. Two new analysis techniques to reject surface-event backgrounds were applied to the 612 kg days germanium-detector weakly interacting massive particle (WIMP)-search exposure. An extended analysis was also completed by decreasing the 10 keV analysis threshold to ~5 keV, to increase sensitivity near a WIMP mass of 8 GeV/c2. After unblinding, there were zero candidate events above a deposited energy of 10 keV and six events in the lower-threshold analysis. This yielded minimum WIMP-nucleon spin-independent scattering cross-section limits of 1.8×10-44 and 1.18×10-41 at 90% confidence for 60 and 8.6 GeV/c2 WIMPs, respectively. This improves the previous CDMS II result by a factor of 2.4 (2.7) for 60 (8.6) GeV/c2 WIMPs.

  10. Synthesis, surface properties and antimicrobial activity of some germanium nonionic surfactants.

    Zaki, Mohamed F; Tawfik, Salah M

    2014-01-01

    Esterification reaction between different fatty acid namely; lauric, stearic, oleic and linoleic acids and polyethylene glycol-400 were performed. The produced polyethylene glycol ester were reacted with p-amine benzoic acid followed by condensation reaction with germanium dioxide in presence of sodium carbonate to form desired germinate surfactants. The chemical structures of the synthesized surfactants were determined using different spectra tools. The surface parameter including: the critical micelle concentration (CMC), effectiveness (π(cmc)), efficiency (Pc20), maximum surface excess (Γ(max)) and minimum surface area (A(min)), were calculated from the surface tension measurements. The synthesized surfactants showed higher surface activity. The thermodynamic parameters showed that adsorption and micellization processes are spontaneous. It is clear that the synthesized nonionic surfactants showed their tendency towards adsorption at the interfaces and also micellization in the bulk of their solutions. The synthesized surfactants were tested against different strain of bacteria using inhibition zone diameters. The synthesized surfactants showed good antimicrobial activities against the tested microorganisms including Gram positive, Gram negative as well as fungi. The promising inhibition efficiency of these compounds against the sulfate reducing bacteria facilitates them to be applicable as new categories of sulfate reducing bacteria biocides.

  11. Simulation study comparing high-purity germanium and cadmium zinc telluride detectors for breast imaging

    Campbell, D. L.; Peterson, T. E.

    2014-11-01

    We conducted simulations to compare the potential imaging performance for breast cancer detection with High-Purity Germanium (HPGe) and Cadmium Zinc Telluride (CZT) systems with 1% and 3.8% energy resolution at 140 keV, respectively. Using the Monte Carlo N-Particle (MCNP5) simulation package, we modelled both 5 mm-thick CZT and 10 mm-thick HPGe detectors with the same parallel-hole collimator for the imaging of a breast/torso phantom. Simulated energy spectra were generated, and planar images were created for various energy windows around the 140 keV photopeak. Relative sensitivity and scatter and the torso fractions were calculated along with tumour contrast and signal-to-noise ratios (SNR). Simulations showed that utilizing a ±1.25% energy window with an HPGe system better suppressed torso background and small-angle scattered photons than a comparable CZT system using a -5%/+10% energy window. Both systems provided statistically similar contrast and SNR, with HPGe providing higher relative sensitivity. Lowering the counts of HPGe images to match CZT count density still yielded equivalent contrast between HPGe and CZT. Thus, an HPGe system may provide equivalent breast imaging capability at lower injected radioactivity levels when acquiring for equal imaging time.

  12. Differentiating hidden sector dark matter from light WIMPs with Germanium detectors

    Foot, R.

    2013-06-01

    Light WIMP dark matter and hidden sector dark matter have been proposed to explain the DAMA, CoGeNT and CRESST-II data. Both of these approaches feature spin independent elastic scattering of dark matter particles on nuclei. Light WIMP dark matter invokes a single particle species which interacts with ordinary matter via contact interactions. By contrast hidden sector dark matter is typically multi-component and is assumed to interact via the exchange of a massless mediator. Such hidden sector dark matter thereby predicts a sharply rising nuclear recoil spectrum, dR/dER∼1/ER2 due to this dynamics, while WIMP dark matter predicts a spectrum which depends sensitively on the WIMP mass, mχ. We compare and contrast these two very different possible origins of the CoGeNT low energy excess. In the relevant energy range, the recoil spectra predicted by these two theories approximately agree provided mχ ≃ 8.5 GeV - close to the value favoured from fits to the CoGeNT and CDMS low energy data. Forthcoming experiments including C-4, CDEX, and the MAJORANA demonstrator, are expected to provide reasonably precise measurements of the low energy Germanium recoil spectrum, including the annual modulation amplitude, which should differentiate between these two theoretical possibilities.

  13. Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance

    Cecil, Kanchan; Singh, Jawar

    2017-01-01

    Dopingless (DL) and junctionless devices have attracted attention due to their simplified fabrication process and low thermal budget requirements. Therefore, in this work, we investigated the influence of low band gap Germanium (Ge) instead of Silicon (Si) as a "Source region" material in dopingless (DL) tunnel field-effect transistor (DLTFET). We observed that the Ge source DLTFET delivers much better performance in comparison to Si DLTFET under various analog/RF figure of merits (FOMs), such as transconductance (gm), transconductance generation factor (TGF) (gm /Id), output conductance (gd), output resistance (RO), intrinsic gain (gmRO), intrinsic gate delay (τ) and RF FOMs, like unity gain frequency (fT), gain bandwidth product (GBW) along with various gate capacitances. These parameters were extracted using 2D TCAD device simulations through small signal ac analysis. Higher ION /IOFF ratio (1014) of Ge source DLTFET can reduce the dynamic as well as static power in digital circuits, while higher transconductance generation factor (gm /Id) ∼ 2287 V-1 can lower the bias power of an amplifier. Similarly, enhanced RF FOMs i.e unity gain frequency (fT) and gain bandwidth product (GBW) in Gigahertz range projects the proposed device preference for RF circuits.

  14. Background intercomparison with escape-suppressed germanium detectors in underground mines

    Szuecs, Tamas; Bemmerer, Daniel [Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden (Germany)

    2014-07-01

    A key requirement for underground nuclear astrophysics experiments is the very low background level in germanium detectors underground. The reference for these purposes is the world's so far only underground accelerator laboratory for nuclear astrophysics, LUNA. LUNA is located deep underground in the Gran Sasso laboratory in Italy, shielded from cosmic rays by 1400 m of rock. The background at LUNA was studied in detail using an escape-suppressed Clover-type HPGe detector. Exactly the same detector was subsequently transported to the Felsenkeller underground laboratory in Dresden, shielded by 45 m of rock, and the background was shown to be only a factor of three higher than at LUNA when comparing the escape-suppressed spectra, with interesting consequences for underground nuclear astrophysics. As the next step of a systematic study of the effects of a combination of active and passive shielding on the cosmic ray induced background, this detector is now being brought to the ''Reiche Zeche'' mine in Freiberg/Sachsen, shielded by 150 m of rock. The data from the Freiberg measurement are shown and discussed.

  15. Tunable electronic and optical behaviors of two-dimensional germanium carbide

    Xu, Zhuo; Li, Yangping, E-mail: liyp@nwpu.edu.cn; Li, Chenxi; Liu, Zhengtang

    2016-03-30

    Graphical abstract: In-plane and biaxial strain effects can provide a wide band gap engineering and new options of interband transitions for 2d-GeC in application of optoelectronic devices. - Highlights: • Tunable band structures when in-plane strain is applied on monolayer GeC. • Tunable electronic and optical properties of bilayer under strain along the c axis. • Tunable band structures are observed in multilayer GeC. - Abstract: The electronic and optical properties of two-dimensional graphene-like germanium carbide (2D-GeC) are calculated using first-principle calculation based on density functional theory. Monolayer GeC has a direct band gap of 2.19 eV. The imaginary part of the dielectric function shows a wide energy range of absorption spectrum for monolayer GeC. Tunable band structures are found for monolayer GeC through in-plane strain. In addition, the band structures and optical properties of bilayer GeC under strain along the c axis are analyzed. Multilayer GeC exhibits a direct band gap like monolayer GeC, and new options of interband transitions are found between layers. The results suggest that 2D-GeC could be a good candidate for optoelectronic such as light-emitting diodes, photodiodes, and solar cells.

  16. Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

    Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-chan; Hong, Hyobong; Choi, Chel-Jong

    2016-03-01

    We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (VB), ideality factor (n), and series resistance (Rs), were extracted using the forward I-V and Cheung's methods. The VB and n extracted from the forward ln(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the VB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of VB calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.

  17. Two-dimensional growth of germanium under a diffusion limited aggregation environment

    Lee, Jaejun; Kim, Sung Wook; Park, Youn Ho; Park, Jeong Min; Kim, Yeon Joo; Park, Sangwon; Yang, Jeen Moon; Choi, Heon-Jin

    2017-01-01

    The discovery of graphene has triggered immense interest in two-dimensional (2D) nanomaterials. However, the 2D growth of several layerstructured crystals such as graphene, MoS2, and black phosphorus is difficult and limited. Here, we report the gas-phase 2D growth of germanium (Ge) with a cubic structure to form Ge nanosheets (GeNSs) using the chemical vapor deposition method. Our investigation revealed that a diffusion limited aggregation (DLA) environment is essential for the 2D growth of Ge that induces a dendritic growth in the direction and suppresses the growth in the [111] direction. The growth behavior was similar to the 2D growth of silicon reported previously. Thus, it can be concluded that a DLA environment is essential for the 2D growth of cubic structured materials. The electron density and mobility of GeNSs were found to be 1.3 × 1015 cm-3 and 792 cm2/Vs, respectively, and their resistivity varied with the intensity of light. [Figure not available: see fulltext.

  18. Improved WIMP-search reach of the CDMS II germanium data

    Agnese, R; Asai, M; Balakishiyeva, D; Barker, D; Thakur, R Basu; Bauer, D A; Billard, J; Borgland, A; Bowles, M A; Brandt, D; Brink, P L; Bunker, R; Cabrera, B; Caldwell, D O; Calkins, R; Cerdeño, D G; Chagani, H; Chen, Y; Cooley, J; Cornell, B; Crewdson, C H; Cushman, P; Daal, M; Di Stefano, P C F; Doughty, T; Esteban, L; Fallows, S; Figueroa-Feliciano, E; Godfrey, G L; Golwala, S R; Hall, J; Harris, H R; Hertel, S A; Hofer, T; Holmgren, D; Hsu, L; Huber, M E; Jardin, D; Jastram, A; Kamaev, O; Kara, B; Kelsey, M H; Kennedy, A; Kiveni, M; Koch, K; Leder, A; Loer, B; Asamar, E Lopez; Lukens, P; Mahapatra, R; Mandic, V; McCarthy, K A; Mirabolfathi, N; Moffatt, R A; Oser, S M; Page, K; Page, W A; Partridge, R; Pepin, M; Phipps, A; Prasad, K; Pyle, M; Qiu, H; Rau, W; Redl, P; Reisetter, A; Ricci, Y; Rogers, H E; Saab, T; Sadoulet, B; Sander, J; Schneck, K; Schnee, R W; Scorza, S; Serfass, B; Shank, B; Speller, D; Toback, D; Upadhyayula, S; Villano, A N; Welliver, B; Wilson, J S; Wright, D H; Yang, X; Yellin, S; Yen, J J; Young, B A; Zhang, J

    2015-01-01

    CDMS II data from the 5-tower runs at the Soudan Underground Laboratory were reprocessed with an improved charge-pulse fitting algorithm. Two new analysis techniques to reject surface-event backgrounds were applied to the 612 kg days germanium-detector WIMP-search exposure. An extended analysis was also completed by decreasing the 10 keV analysis threshold to $\\sim$5 keV, to increase sensitivity near a WIMP mass of 8 GeV/$c^2$. After unblinding, there were zero candidate events above a deposited energy of 10 keV and 6 events in the lower-threshold analysis. This yielded minimum WIMP-nucleon spin-independent scattering cross-section limits of $1.8 \\times 10^{-44}$ and $1.18 \\times 10 ^{-41}$ cm$^2$ at 90\\% confidence for 60 and 8.6 GeV/$c^2$ WIMPs, respectively. This improves the previous CDMS II result by a factor of 2.4 (2.7) for 60 (8.6) GeV/$c^2$ WIMPs.

  19. Unexpected properties of the inductively coupled plasma induced defect in germanium

    Coelho, S.M.M., E-mail: sergio@up.ac.za; Auret, F.D.; Janse van Rensburg, P.J.; Nel, J.M.

    2014-04-15

    Inductively coupled plasma (ICP) etching of germanium introduces a single defect, the E{sub 0.31} electron trap, for a large range of argon partial pressures from 4×10{sup –3} to 6.5×10{sup –4} mbar that correspond to ion energies of 8 to 60 eV. Ge of three crystallographic orientations, (1 0 0), (1 1 0) and (1 1 1), treated with 20 and 60 eV ICP had defect concentration profiles that were similar in appearance, with a maximum concentration of 10{sup 14} cm{sup −3} extending more than a µm into the material, approximately three orders of magnitude deeper than what TRIM simulations predicted. All profiles were measured using Laplace deep level transient spectroscopy (L-DLTS), a technique that is sensitive to defect concentrations as low as 10{sup 11} cm{sup −3}. Isochronal annealing of samples showed concentration curves broadening after a 400 K anneal and decreasing to the 10{sup 13} cm{sup −3} level after a 450 K anneal. Unannealed samples measured after a year exhibited similar decreases in defect concentration without broadening of their profiles. A 550 K anneal lowered the defect concentration to levels below the L-DLTS detection limit. Thereafter additional plasma treatment of the surface failed to reintroduce this defect indicating that the structure required for the formation of E{sub 0.31} was no longer present in the region under observation.

  20. Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

    Callum G. Littlejohns

    2016-01-01

    Full Text Available The realisation of high quality silicon-germanium-on-insulator (SGOI is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 μm and 1.55 μm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect-free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for the state-of-the-art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.

  1. Germanium nanoparticles grown at different deposition times for memory device applications

    Mederos, M., E-mail: melissa.mederos@gmail.com [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); Mestanza, S.N.M. [Federal University of ABC (UFABC), Rua Santa Adélia 166, Bangu, Santo André, CEP: 09210-170, São Paulo (Brazil); Lang, R. [Institute of Science and Technology, Federal University of São Paulo (UNIFESP), Rua Talim, 330, São José dos Campos, CEP: 12231-280, São Paulo (Brazil); Doi, I.; Diniz, J.A. [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); School of Electrical and Computer Engineering, University of Campinas (Unicamp), Av. Albert Einstein 400, Campinas, CEP: 13083-852, São Paulo (Brazil)

    2016-07-29

    In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

  2. Modeling and Analysis of Entropy Generation in Light Heating of Nanoscaled Silicon and Germanium Thin Films

    José Ernesto Nájera-Carpio

    2015-07-01

    Full Text Available In this work, the irreversible processes in light heating of Silicon (Si and Germanium (Ge thin films are examined. Each film is exposed to light irradiation with radiative and convective boundary conditions. Heat, electron and hole transport and generation-recombination processes of electron-hole pairs are studied in terms of a phenomenological model obtained from basic principles of irreversible thermodynamics. We present an analysis of the contributions to the entropy production in the stationary state due to the dissipative effects associated with electron and hole transport, generation-recombination of electron-hole pairs as well as heat transport. The most significant contribution to the entropy production comes from the interaction of light with the medium in both Si and Ge. This interaction includes two processes, namely, the generation of electron-hole pairs and the transferring of energy from the absorbed light to the lattice. In Si the following contribution in magnitude comes from the heat transport. In Ge all the remaining contributions to entropy production have nearly the same order of magnitude. The results are compared and explained addressing the differences in the magnitude of the thermodynamic forces, Onsager’s coefficients and transport properties of Si and Ge.

  3. The microstructure evolution of hydrogenated microcrystalline germanium promoted by power gradient method

    Wang, Xinyu; Ni, Jian; Li, Chang; Sun, Xiaoxiang; Li, Zhenglong; Cai, Hongkun; Li, Juan; Zhang, Jianjun

    2016-12-01

    This paper studies the microstructure evolution of hydrogenated microcrystalline germanium (μc-Ge:H) thin films deposited by plasma enhanced chemical vapor deposition (PECVD). There is an amorphous incubation layer formed in the initial deposition stage of μc-Ge:H thin film. It is demonstrated that the thickness of incubation layer can be reduced by high hydrogen dilution and high discharge power method. However, at high hydrogen dilution, the deposition rate of μc-Ge:H appears a sharply decrease. Using a high discharge power can compensate the deposition rate decrease but lead to decrease of average grain size and appearance of micro-void in the μc-Ge:H thin film. In addition, by comparing two thickness groups of μc-Ge:H thin films deposited at different discharge powers, it is noticed that the evolution process relates to the formation of crystal nucleuses. Thus, a power gradient method is proposed to understand the mechanism of nucleation and crystal growth in the initial deposition process of μc-Ge:H films. Finally, by power gradient method, the incubation layer thickness of μc-Ge:H thin films has been decreased to less than 6 nm. Moreover, Raman scattering spectra shows a 38 nm μc-Ge:H film has a crystal fraction (XC) of 62.4%. Meanwhile, the mobility of TFT devices shows the improved electrical property of μc-Ge:H film deposited by power gradient method.

  4. DLTS Study of plastically deformed copper-doped n-type germanium

    Shevchenko, S. A., E-mail: shevchen@issp.ac.ru; Kolyubakin, A. I. [Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation)

    2013-06-15

    Classical deep level transient spectroscopy (DLTS) and its modification are used to study the time constants of electron capture by substitutional Cu{sub s}{sup 2-} atoms and thermal electron emission from Cu{sub s}{sup 3-} atoms in plastically deformed Cu-doped n-type germanium. The activation energy E{sub {sigma}}, the electron capture cross-section, the energy E{sub 3} of the third acceptor level of Cu{sub s/3-} atoms, and the ionization entropy are determined. The lack of E{sub 3}-level broadening, the exponential capture kinetics for a filling-pulse duration of t{sub p} Less-Than-Or-Equivalent-To 1 ms, the fact that the Cu{sub s/2-/3-}-atom recombination parameters are independent of the dislocation density, and the low concentration of Cu{sub s/2-/3-} atoms in the deformed samples suggest that the DLTS spectra are due to Cu{sub s/2-/3-} atoms located outside the Read cylinders.

  5. Nanocrystalline germanium nip solar cells with spectral sensitivities extending into 1450 nm

    Li, Chang; Ni, Jian; Sun, Xiaoxiang; Wang, Xinyu; Li, Zhenglong; Cai, Hongkun; Li, Juan; Zhang, Jianjun

    2017-02-01

    To absorb the infrared part of the solar spectrum more efficiently, narrow bandgap hydrogenated nanocrystalline germanium (nc-Ge:H) thin films were fabricated by radio frequency plasma enhanced chemical vapor deposition at a low temperature of 180 °C. While the incubation layer of the nc-Ge:H was reduced to less than 5 nm by using the ultra-high hydrogen dilution, the negative photoconductivity behavior was still observed as the thickness of nc-Ge:H up to 30 nm. Therefore, as the best candidate for solar cells application, the nc-Ge:H (20 nm)/nc-Si:H (10 nm) periodic multilayer structure was prepared and used as the absorption layer of nc-Ge:H nip solar cells. More importantly, the spectral sensitivities extending into the wavelength of 1450 nm were achieved in the nc-Ge:H nip solar cells. In addition, the annealing for the nc-Ge:H nip solar cells was carried out. While the overall short circuit current density of the device is improved after 500 °C annealing, the spectral sensitivities in the infrared region is decreased due to the the coalescence of Ge crystallites.

  6. Fundamental aspects of nucleation and growth in the solution-phase synthesis of germanium nanocrystals

    Codoluto, Stephen C.

    2010-01-01

    Colloidal Ge nanocrystals (NCs) were synthesized via the solution phase reduction of germanium(ii) iodide. We report a systematic investigation of the nanocrystal nucleation and growth as a function of synthesis conditions including the nature of coordinating solvents, surface bound ligands, synthesis duration and temperature. NC synthesis in reaction environments with weakly bound phosphine surface ligand led to the coalescence of nascent particles leading to ensembles with broad lognormal particle diameter distributions. Synthesis in the presence of amine or alkene ligands mitigated particle coalescence. High-resolution transmission electron micrographs revealed that NCs grown in the presence of weak ligands had a high crystal defect density whereas NCs grown in amine solutions were predominantly defect-free. We applied infrared spectroscopy to study the NC surface chemistry and showed that alkene ligands project the NCs from surface oxidation. Photoluminescence spectroscopy measurements showed that alkene ligands passivate surface traps, as indicated by infrared fluorescence, conversely oxidized phosphine and amine passivated NCs did not fluoresce. © 2010 The Royal Society of Chemistry.

  7. A topological analysis of charge densities in diamond, silicon and germanium crystals

    Abramov, Yu.A. [National Inst. for Research in Inorganic Materials, Tsukuba, Ibaraki (Japan); Okamura, F.P. [National Inst. for Research in Inorganic Materials, Tsukuba, Ibaraki (Japan)

    1997-03-01

    The Hansen-Coppens multipole model of charge density has been fitted to highly accurate published experimental and theoretical structure factors for diamond, silicon and germanium crystals. Analysis of both model experimental and theoretical charge densities using the resulting model parameters was performed in terms of Bader`s topological theory. The general topology of the charge density appeared to be identical for all crystals, containing the four possible types of critical points of rank three, and no non-nuclear attractors between neighboring atoms were found within achieved accuracy. Theoretical and experimental values of charge density and its Laplacian show quantitative and semiquantitative agreement, respectively, at the critical points of model charge densities. For Ge crystals, such agreement is worse at the ring critical point. These results suggest the possibility of semiquantitative (within 10-30%) study of the topological characteristics of highly accurate X-ray charge densities of crystals displaying shared interatomic interactions. Comparative topological analysis of the chemical bond in this series of crystals is discussed in terms of the quantum topological theory. (orig.).

  8. Activation cross sections of longer-lived radionuclides produced in germanium by alpha particle irradiation

    Takács, S.; Takács, M. P.; Ditrói, F.; Aikawa, M.; Haba, H.; Komori, Y.

    2016-09-01

    The cross sections of alpha particles induced nuclear reactions on natural germanium were investigated by using the standard stacked foil target technique, the activation method and high resolution gamma spectrometry. Targets with thickness of about 1 μm were prepared from natural Ge by vacuum evaporation onto 25 μm thick polyimide (Kapton) backing foils. Stacks were composed of Kapton-Ge-Ge-Kapton sandwich target foils and additional titanium monitor foils with nominal thickness of 11 μm to monitor the beam parameters using the natTi(α,x)51Cr reaction. The irradiations were done with Eα = 20.7 and Eα = 51.25 MeV, Iα = 50 nA alpha particle beams for about 1 h. Direct or cumulative activation cross sections were determined for production of the 72,73,75Se, 71,72,74,76,78As, and 69Ge radionuclides. The obtained experimental cross sections were compared to the results of theoretical calculations taken from the TENDL data library based on the TALYS computer code. A comparison was made with available experimental data measured earlier. Thick target yields were deduced from the experimental cross sections and compared with the data published before.

  9. TRMM Solar Array Panels

    1998-01-01

    This final report presents conclusions/recommendations concerning the TRMM Solar Array; deliverable list and schedule summary; waivers and deviations; as-shipped performance data, including flight panel verification matrix, panel output detail, shadow test summary, humidity test summary, reverse bias test panel; and finally, quality assurance summary.

  10. TANGO Array.. 2. Simulations

    Bauleo, P.; Bonifazi, C.; Filevich, A.

    2004-01-01

    The angular and energy resolutions of the TANGO Array were obtained using extensive Monte Carlo simulations performed with a double purpose: (1) to determine the appropriate parameters for the array fitting to the desired range of sensitivity (the knee energy region), and (2) to construct a reliable shower database required for reference in the analysis of experimental data. The AIRES code, with the SIBYLL hadronic collision package, was used to simulate Extended Air Showers produced by primary cosmic rays (assuming protons and iron nuclei), with energies ranging from 10 14 to 10 18 eV. These data were fed into a realistic code which simulates the response of the detectors (water Cherenkov detectors), including the electronics, pickup noise, and the signal attenuation in the connecting cables. The trigger stage was considered in the simulations in order to estimate the trigger efficiency of the array and to verify the accuracy of the reconstruction codes. This paper delineates the simulations performed to obtain the expected behavior of the array, and describes the simulated data. The results of these simulations suggest that we can expect an error in the energy of the primary cosmic-ray of ˜60% of the estimated value and that the error in the measurement of the direction of arrival can be estimated as ˜4°. The present simulations also indicate that unambiguous assignments of the primary energy cannot be obtained because of the uncertainty in the nature of the primary cosmic ray.

  11. TANGO Array. 2. Simulations

    Bauleo, P. E-mail: pablo.bauleo@colostate.edu; Bonifazi, C.; Filevich, A

    2004-01-11

    The angular and energy resolutions of the TANGO Array were obtained using extensive Monte Carlo simulations performed with a double purpose: (1) to determine the appropriate parameters for the array fitting to the desired range of sensitivity (the knee energy region), and (2) to construct a reliable shower database required for reference in the analysis of experimental data. The AIRES code, with the SIBYLL hadronic collision package, was used to simulate Extended Air Showers produced by primary cosmic rays (assuming protons and iron nuclei), with energies ranging from 10{sup 14} to 10{sup 18} eV. These data were fed into a realistic code which simulates the response of the detectors (water Cherenkov detectors), including the electronics, pickup noise, and the signal attenuation in the connecting cables. The trigger stage was considered in the simulations in order to estimate the trigger efficiency of the array and to verify the accuracy of the reconstruction codes. This paper delineates the simulations performed to obtain the expected behavior of the array, and describes the simulated data. The results of these simulations suggest that we can expect an error in the energy of the primary cosmic-ray of {approx}60% of the estimated value and that the error in the measurement of the direction of arrival can be estimated as {approx}4 deg. . The present simulations also indicate that unambiguous assignments of the primary energy cannot be obtained because of the uncertainty in the nature of the primary cosmic ray.

  12. The Murchison Widefield Array

    Mitchell, Daniel A.; Greenhill, Lincoln J.; Ord, Stephen M.; Bernardi, Gianni

    2010-01-01

    It is shown that the excellent Murchison Radio-astronomy Observatory site allows the Murchison Widefield Array to employ a simple RFI blanking scheme and still calibrate visibilities and form images in the FM radio band. The techniques described are running autonomously in our calibration and imagin

  13. Array processors in chemistry

    Ostlund, N.S.

    1980-01-01

    The field of attached scientific processors (''array processors'') is surveyed, and an attempt is made to indicate their present and possible future use in computational chemistry. The current commercial products from Floating Point Systems, Inc., Datawest Corporation, and CSP, Inc. are discussed.

  14. Bandwidth Reconfigurable Metamaterial Arrays

    Nathanael J. Smith

    2014-01-01

    Full Text Available Metamaterial structures provide innovative ways to manipulate electromagnetic wave responses to realize new applications. This paper presents a conformal wideband metamaterial array that achieves as much as 10 : 1 continuous bandwidth. This was done by using interelement coupling to concurrently achieve significant wave slow-down and cancel the inductance stemming from the ground plane. The corresponding equivalent circuit of the resulting array is the same as that of classic metamaterial structures. In this paper, we present a wideband Marchand-type balun with validation measurements demonstrating the metamaterial (MTM array’s bandwidth from 280 MHz to 2800 MHz. Bandwidth reconfiguration of this class of array is then demonstrated achieving a variety of band-pass or band-rejection responses within its original bandwidth. In contrast with previous bandwidth and frequency response reconfigurations, our approach does not change the aperture’s or ground plane’s geometry, nor does it introduce external filtering structures. Instead, the new responses are realized by making simple circuit changes into the balanced feed integrated with the wideband MTM array. A variety of circuit changes can be employed using MEMS switches or variable lumped loads within the feed and 5 example band-pass and band-rejection responses are presented. These demonstrate the potential of the MTM array’s reconfiguration to address a variety of responses.

  15. Microelectronic Stimulator Array

    2000-08-09

    retinal prosthesis test device. Figure 3b shows an enlarged view of a nano-channel glass (NCG) electrode array. Figure 4 shows a conceptual layout (floor...against a visual cortex. 10 This involves invasive brain surgery through the cranium . From a surgical point of view, the intra ocular approach is

  16. Geant4 simulation study of Indian National Gamma Array at TIFR

    Saha, S.; Palit, R.; Sethi, J.; Biswas, S.; Singh, P.

    2016-03-01

    A Geant4 simulation code for the Indian National Gamma Array (INGA) consisting of 24 Compton suppressed clover high purity germanium (HPGe) detectors has been developed. The calculated properties in the energy range that is of interest for nuclear γ-ray spectroscopy are spectral distributions for various standard radioactive sources, intrinsic peak efficiencies and peak-to-total (P/T) ratios in various configurations such as singles, add-back and Compton suppressed mode. The principle of operation of the detectors in add-back and Compton suppression mode have been reproduced in the simulation. The reliability of the calculation is checked by comparison with the experimental data for various γ-ray energies up to 5 MeV. The comparison between simulation results and experimental data demonstrate the need of incorporating the exact geometry of the clover detectors, Anti-Compton Shield and other surrounding materials in the array to explain the detector response to the γ-ray. Several experimental effects are also investigated. These include the geometrical correction to angular distribution, crosstalk probability and the impact of heavy metal collimators between the target and the array on the P/T ratio.

  17. Radar techniques using array antennas

    Wirth, Wulf-Dieter

    2013-01-01

    Radar Techniques Using Array Antennas is a thorough introduction to the possibilities of radar technology based on electronic steerable and active array antennas. Topics covered include array signal processing, array calibration, adaptive digital beamforming, adaptive monopulse, superresolution, pulse compression, sequential detection, target detection with long pulse series, space-time adaptive processing (STAP), moving target detection using synthetic aperture radar (SAR), target imaging, energy management and system parameter relations. The discussed methods are confirmed by simulation stud

  18. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

    Cariou, R., E-mail: romain.cariou@polytechnique.edu [LPICM-CNRS, Ecole Polytechnique, 91128, Palaiseau (France); III-V lab a joint laboratory between Alcatel-Lucent Bell Labs France, Thales Research and Technology and CEA-LETI, route de Nozay, 91460, Marcoussis, France. (France); Ruggeri, R. [LPICM-CNRS, Ecole Polytechnique, 91128, Palaiseau (France); CNR-IMM, strada VIII n°5, zona industriale, 95121, Catania (Italy); Tan, X.; Nassar, J.; Roca i Cabarrocas, P. [LPICM-CNRS, Ecole Polytechnique, 91128, Palaiseau (France); Mannino, Giovanni [CNR-IMM, strada VIII n°5, zona industriale, 95121, Catania (Italy)

    2014-07-15

    We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 10{sup 6} cm{sup −2} are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.

  19. Timed arrays wideband and time varying antenna arrays

    Haupt, Randy L

    2015-01-01

    Introduces timed arrays and design approaches to meet the new high performance standards The author concentrates on any aspect of an antenna array that must be viewed from a time perspective. The first chapters briefly introduce antenna arrays and explain the difference between phased and timed arrays. Since timed arrays are designed for realistic time-varying signals and scenarios, the book also reviews wideband signals, baseband and passband RF signals, polarization and signal bandwidth. Other topics covered include time domain, mutual coupling, wideband elements, and dispersion. The auth

  20. Performance and stability tests of bare high purity germanium detectors in liquid argon for the GERDA experiment

    Barnabe Heider, Marik

    2009-05-27

    GERDA will search for neutrinoless double beta decay of {sup 76}Ge by using a novel approach of bare germanium detectors in liquid argon (LAr). Enriched germanium detectors from the previous Heidelberg-Moscow and IGEX experiments have been reprocessed and will be deployed in GERDA Phase-I. At the center of this thesis project is the study of the performance of bare germanium detectors in cryogenic liquids. Identical detector performance as in vacuum cryostats (2.2 keV FWHM at 1.3 MeV) was achieved in cryogenic liquids with a new low-mass detector assembly and contacts. One major result is the discovery of a radiation induced leakage current (LC) increase when operating bare detectors with standard passivation layers in LAr. Charge collection and build-up on the passivation layer were identified as the origin of the LC increase. It was found that diodes without passivation do not exhibit this feature. Three month-long stable operation in LAr at {proportional_to} 5 pA LC under periodic gamma irradiation demonstrated the suitability of the modi ed detector design. Based on these results, all Phase-I detectors were reprocessed without passivation layer and subsequently successfully characterized in LAr in the GERDA underground Detector Laboratory. The mass loss during the reprocessing was {proportional_to}300 g out of 17.9 kg and the exposure above ground {proportional_to} 5 days. This results in a negligible cosmogenic background increase of {proportional_to} 5.10{sup -4} cts/(keV.kg.y) at {sup 76}Ge Q{sub {beta}}{sub {beta}} for {sup 60}Co and {sup 68}Ge. (orig.)

  1. Atacama Compact Array Antennas

    Saito, Masao; Nakanishi, Kouichiro; Naoi, Takahiro; Yamada, Masumi; Saito, Hiro; Ikenoue, Bungo; Kato, Yoshihiro; Morita, Kou-ichiro; Mizuno, Norikazu; Iguchi, Satoru

    2011-01-01

    We report major performance test results of the Atacama Compact Array (ACA) 7-m and 12-m antennas of ALMA (Atacama Large Millimeter/submillimeter Array). The four major performances of the ACA antennas are all-sky pointing (to be not more than 2.0 arcsec), offset pointing (to be < 0.6 arcsec) surface accuracy (< 25(20) micrometer for 12(7)m-antenna), stability of path-length (15 micrometer over 3 min), and high servo capability (6 degrees/s for Azimuth and 3 degrees/s for Elevation). The high performance of the ACA antenna has been extensively evaluated at the Site Erection Facility area at an altitude of about 2900 meters. Test results of pointing performance, surface performance, and fast motion capability are demonstrated.

  2. Pulsar Timing Arrays

    Joshi, Bhal Chandra

    2013-01-01

    In the last decade, the use of an ensemble of radio pulsars to constrain the characteristic strain caused by a stochastic gravitational wave background has advanced the cause of detection of very low frequency gravitational waves significantly. This electromagnetic means of gravitational wave detection, called Pulsar Timing Array(PTA), is reviewed in this article. The principle of operation of PTA, the current operating PTAs and their status is presented along-with a discussion of the main ch...

  3. Photovoltaic cell array

    Eliason, J. T. (Inventor)

    1976-01-01

    A photovoltaic cell array consisting of parallel columns of silicon filaments is described. Each fiber is doped to produce an inner region of one polarity type and an outer region of an opposite polarity type to thereby form a continuous radial semi conductor junction. Spaced rows of electrical contacts alternately connect to the inner and outer regions to provide a plurality of electrical outputs which may be combined in parallel or in series.

  4. The Cherenkov Telescope Array

    Connaughton, Valerie

    2014-03-01

    The Cherenkov Telescope Array (CTA) is a large collaborative effort dedicated to the design and operation of the next-generation ground-based very high-energy gamma-ray observatory. CTA will improve by about one order of magnitude the sensitivity with respect to the current major arrays (VERITAS, H.E.S.S., and MAGIC) in the core energy range of 100 GeV to 10 TeV, and will extend the viability of the imaging atmospheric Cherenkov technique (IACT) down to tens of GeV and above 100 TeV. In order to achieve such improved performance at both a northern and southern CTA site, four 23m diameter Large Size Telescopes (LST) optimized for low energy gamma rays will be deployed close to the centre of the array. A larger number of Medium Size Telescopes (MST) will be optimized for the core IACT energy range. The southern site will include 25 12m single-mirror MSTs and a US contribution of up to 24 novel dual-mirror design Schwarzschild-Couder (SC) type MSTs with a primary mirror of 9.5m diameter, and will also include an array of Small Size Telescopes (SST) to observe the highest-energy gamma rays from galactic sources. The SSTs can be smaller and more widely separated because more energetic gamma rays produce a larger Cherenkov light pool with many photons. The SSTs achieve a large collection area by covering a wide (10 sq km) footprint on the ground. The CTA project is finishing its preparatory phase, and the pre-production phase will start this year. I will review the status and the expected performance of CTA as well as the main scientific goals for the observatory.

  5. YBCO Josephson Junction Arrays

    1993-07-14

    40, 489 (1961). [8] W. H. Press, B. P. Flannery, S. A. Teukolsky and W. T. Vetterling, Numerical recipes: the art of scientific computing (Cambridge...has recently become a commercial product. He has developed processes for depositing state-of-the art YBCO films on buffered sapphire substrates. His...technology can most improve and on what subsystems would benefit most from the pt.. .imance available from these arrays. Aqppoved f or publicO re󈧎OSI AIR

  6. Solar collector array

    Hall, John Champlin; Martins, Guy Lawrence

    2015-09-06

    A method and apparatus for efficient manufacture, assembly and production of solar energy. In one aspect, the apparatus may include a number of modular solar receiver assemblies that may be separately manufactured, assembled and individually inserted into a solar collector array housing shaped to receive a plurality of solar receivers. The housing may include optical elements for focusing light onto the individual receivers, and a circuit for electrically connecting the solar receivers.

  7. The TALE Infill Array

    Bergman, Douglas

    2009-05-01

    The TALE Infill Array in conjunction with the TALE Tower Detector will provide hybrid coverage of the cosmic ray energy spectrum down to 3x10^16 eV. It will consist of about 100, two square meter scintillators on the surface spaced at 400 m; and 24 buried twelve square meter scintillators. The combination of surface and underground detectors will allow for the determination of the muon content of showers and thus give a handle on cosmic ray composition.

  8. Determination of the spin diffusion length in germanium by spin optical orientation and electrical spin injection

    Rinaldi, C.; Bertoli, S.; Asa, M.; Baldrati, L.; Manzoni, C.; Marangoni, M.; Cerullo, G.; Bianchi, M.; Sordan, R.; Bertacco, R.; Cantoni, M.

    2016-10-01

    The measurement of the spin diffusion length and/or lifetime in semiconductors is a key issue for the realisation of spintronic devices, exploiting the spin degree of freedom of carriers for storing and manipulating information. In this paper, we address such parameters in germanium (0 0 1) at room temperature (RT) by three different measurement methods. Exploiting optical spin orientation in the semiconductor and spin filtering across an insulating MgO barrier, the dependence of the resistivity on the spin of photo-excited carriers in Fe/MgO/Ge spin photodiodes (spin-PDs) was electrically detected. A spin diffusion length of 0.9  ±  0.2 µm was obtained by fitting the photon energy dependence of the spin signal by a mathematical model. Electrical techniques, comprising non-local four-terminal and Hanle measurements performed on CoFeB/MgO/Ge lateral devices, led to spin diffusion lengths of 1.3  ±  0.2 µm and 1.3  ±  0.08 µm, respectively. Despite minor differences due to experimental details, the order of magnitude of the spin diffusion length is the same for the three techniques. Although standard electrical methods are the most employed in semiconductor spintronics for spin diffusion length measurements, here we demonstrate optical spin orientation as a viable alternative for the determination of the spin diffusion length in semiconductors allowing for optical spin orientation.

  9. Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science ISS Investigation

    Volz, M. P.; Mazuruk, K.; Croll, A.

    2014-01-01

    A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processinginduced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.

  10. Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices.

    Clavel, Michael; Saladukha, Dzianis; Goley, Patrick S; Ochalski, Tomasz J; Murphy-Armando, Felipe; Bodnar, Robert J; Hudait, Mantu K

    2015-12-09

    The growth, structural and optical properties, and energy band alignments of tensile-strained germanium (ε-Ge) epilayers heterogeneously integrated on silicon (Si) were demonstrated for the first time. The tunable ε-Ge thin films were achieved using a composite linearly graded InxGa1-xAs/GaAs buffer architecture grown via solid source molecular beam epitaxy. High-resolution X-ray diffraction and micro-Raman spectroscopic analysis confirmed a pseudomorphic ε-Ge epitaxy whereby the degree of strain varied as a function of the In(x)Ga(1-x)As buffer indium alloy composition. Sharp heterointerfaces between each ε-Ge epilayer and the respective In(x)Ga(1-x)As strain template were confirmed by detailed strain analysis using cross-sectional transmission electron microscopy. Low-temperature microphotoluminescence measurements confirmed both direct and indirect bandgap radiative recombination between the Γ and L valleys of Ge to the light-hole valence band, with L-lh bandgaps of 0.68 and 0.65 eV demonstrated for the 0.82 ± 0.06% and 1.11 ± 0.03% strained Ge on Si, respectively. Type-I band alignments and valence band offsets of 0.27 and 0.29 eV for the ε-Ge/In(0.11)Ga(0.89)As (0.82%) and ε-Ge/In(0.17)Ga(0.83)As (1.11%) heterointerfaces, respectively, show promise for ε-Ge carrier confinement in future nanoscale optoelectronic devices. Therefore, the successful heterogeneous integration of tunable tensile-strained Ge on Si paves the way for the design and implementation of novel Ge-based photonic devices on the Si technology platform.

  11. Microwave Crystallization of Lithium Aluminum Germanium Phosphate Solid-State Electrolyte

    Morsi M. Mahmoud

    2016-06-01

    Full Text Available Lithium aluminum germanium phosphate (LAGP glass-ceramics are considered as promising solid-state electrolytes for Li-ion batteries. LAGP glass was prepared via the regular conventional melt-quenching method. Thermal, chemical analyses and X-ray diffraction (XRD were performed to characterize the prepared glass. The crystallization of the prepared LAGP glass was done using conventional heating and high frequency microwave (MW processing. Thirty GHz microwave (MW processing setup were used to convert the prepared LAGP glass into glass-ceramics and compared with the conventionally crystallized LAGP glass-ceramics that were heat-treated in an electric conventional furnace. The ionic conductivities of the LAGP samples obtained from the two different routes were measured using impedance spectroscopy. These samples were also characterized using XRD and scanning electron microscopy (SEM. Microwave processing was successfully used to crystallize LAGP glass into glass-ceramic without the aid of susceptors. The MW treated sample showed higher total, grains and grain boundary ionic conductivities values, lower activation energy and relatively larger-grained microstructure with less porosity compared to the corresponding conventionally treated sample at the same optimized heat-treatment conditions. The enhanced total, grains and grain boundary ionic conductivities values along with the reduced activation energy that were observed in the MW treated sample was considered as an experimental evidence for the existence of the microwave effect in LAGP crystallization process. MW processing is a promising candidate technology for the production of solid-state electrolytes for Li-ion battery.

  12. Stable functionalization of germanium surface and its application in biomolecules immobilization

    Cai, Qi [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No.865, Changning Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, No.19A, Yuquan Road, Beijing 100049 (China); Xu, Baojian [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No.865, Changning Road, Shanghai 200050 (China); Ye, Lin [Sate Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No.865, Changning Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, No.19A, Yuquan Road, Beijing 100049 (China); Tang, Teng; Huang, Shanluo; Du, Xiaowei [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No.865, Changning Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, No.19A, Yuquan Road, Beijing 100049 (China); Bian, Xiaojun; Zhang, Jishen [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No.865, Changning Road, Shanghai 200050 (China); Di, Zengfeng, E-mail: zfdi@mail.sim.ac.cn [Sate Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No.865, Changning Road, Shanghai 200050 (China); Jin, Qinghui [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No.865, Changning Road, Shanghai 200050 (China); Zhao, Jianlong, E-mail: jlzhao@mail.sim.ac.cn [State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, No.865, Changning Road, Shanghai 200050 (China)

    2014-10-15

    Highlights: • An effective method to immobilize biomolecules on the functionalized Ge surface. • The surface of Ge was functionalized with 11-Mercaptoundecanoic acid (11-MUA). • Stable and uniform SAMs was obtained on Ge surface after 11-MUA treatment. • The functionalized Ge was employed as substrate for protein immobilization. • Paving the way of Ge for further applications in bioelectronics field. - Abstract: As a typical semiconductor material, germanium (Ge) has the potential to be utilized in microelectronics and bioelectronics. Herein, we present a simple and effective method to immobilize biomolecules on the surface of functionalized Ge. The surface oxide of Ge was removed with the pretreatment of hydrochloric acid and the Cl-terminated Ge reacted with 11-Mercaptoundecanoic acid (11-MUA). The surface of Ge was coated with 11-MUA self-assembled monolayers (SAMs) due to the bonding reaction between the sulfhydryl group of 11-MUA and Cl-terminated Ge. Furthermore, typical biomolecule, a green fluorescent protein was chosen to be immobilized on the surface of the functionalized Ge. Contact angle analysis, atomic force microscopy and X-ray photoelectron spectroscopy were used to study the characteristics including wettability, stability, roughness and component of the functionalized Ge, respectively. Fluorescence microscopy was utilized to indicate the efficiency of protein immobilization on the surface of the functionalized Ge. With these studies, stable and uniform functionalized monolayer was obtained on the surface of Ge after 11-MUA treatment and the functionalized Ge was effectively applied in protein immobilization. Furthermore, this study may pave the way for further applications such as the integration of bioelectronics and biosensors with the attractive semiconductor material-Ge in future work.

  13. Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy

    Sanson, A., E-mail: andrea.sanson@unipd.it [Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Napolitani, E. [MATIS IMM-CNR at Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Impellizzeri, G. [MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Giarola, M. [Dipartimento di Informatica, Università di Verona, Strada le Grazie 15, I-37134 Verona (Italy); De Salvador, D. [Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy); Privitera, V.; Priolo, F. [MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Mariotto, G. [Dipartimento di Informatica, Università di Verona, Strada le Grazie 15, I-37134 Verona (Italy); Carnera, A. [Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, I-35131 Padova (Italy)

    2013-08-31

    Germanium samples, implanted with aluminum and annealed, have been investigated by micro-Raman spectroscopy using different excitation lines with the aim of gaining insights about the Al distribution at different depths beneath the sample surface and to correlate the Raman spectra with the electrical and chemical profiles, obtained by Spreading Resistance Profiling (SRP) and Secondary Ions Mass Spectrometry (SIMS) measurements, respectively. The intensity of the Al–Ge Raman peak at about 370 cm{sup −1}, due to the local vibrational mode of the substitutional Al atoms in the Ge matrix, has been directly related to the SRP behavior, while no correlation has been observed with SIMS profiles. These findings show that the electrically active content is entirely due to the substitutional Al atoms. Finally, a clear down shift is observed for the Ge–Ge Raman peak at ∼ 300 cm{sup −1}, which also seems to be directly related to the active content of Al dopant atoms. This work shows that micro-Raman spectroscopy can be a suitable tool for the study of doping profiles in Ge. - Highlights: ► Al-implanted Ge and annealed were studied by micro-Raman spectroscopy. ► Using different laser lines we have investigated the implants at different depths. ► The Al–Ge Raman peak at about 370 cm{sup −1} is directly related to the SRP behavior. ► The electrically active content is entirely due to the substitutional Al atoms. ► Carrier effects are observed on the Ge–Ge peak at ∼ 300 cm{sup −1}.

  14. Germanium-silicon as a flow path tracer: Application to the Rio Icacos watershed

    Kurtz, Andrew C.; Lugolobi, Festo; Salvucci, Guido

    2011-06-01

    We use dissolved silicon together with its "geochemical twin" germanium for the first time as a hydrologic tracer to study water delivery to the stream during storm events in the Rio Icacos watershed, Puerto Rico. Ge and Si were measured on base flow, stormflow, springwater, and soil water samples. Compositions of all of these waters appear to reflect varying contributions from three components, which we attribute to solutes released from bedrock weathering (groundwater), from short-term soil-water interaction (quick soil water), and longer-term soil-water interaction (matrix soil water). Base flow stream waters have high Si and moderate Ge (Ge/Si ratio ˜0.29 μmol/mol), consistent with a predominantly bedrock weathering source as indicated by their similarity with water sampled from springs emerging from the saprolite-bedrock boundary on a hillslope landslide scar. During storm events there is a shift toward more dilute compositions (but higher Ge/Si ratios) similar to those measured on water samples from temporary depression storage and overland flow (quick soil water). Geochemical mass balance shows that 80%-90% of the stream chemistry can be explained by mixing groundwater with this quick soil water composition, which we infer to reflect new water traveling as shallow throughflow. Stream water δ18O values decrease to more negative values typical of precipitation supporting rapid delivery of rainwater to the stream channel during stormflow. The third component, with a Ge-rich composition characteristic of soil matrix water sampled by tension lysimeters, is required to explain higher stream water Ge/Si ratios measured during hydrograph recession. We infer from this an additional, slower, and less dominant pathway for delivery of soil water to the stream channel.

  15. Influence of Containment on the Growth of Silicon-Germanium: A Materials Science Flight Project

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2012-01-01

    A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.

  16. Zinc-germanium ores of the Tres Marias Mine, Chihuahua, Mexico

    Saini-Eidukat, Bernhardt; Melcher, Frank; Lodziak, Jerzy

    2009-04-01

    The Tres Marias carbonate-hosted Zn-Ge deposit in Chihuahua, Mexico contains sphalerite with the highest average Ge (960 ppm) and willemite with the highest reported Ge contents of Mississippi-Valley-type (MVT) deposits worldwide. This has prompted current exploration efforts to focus on the deposit as a high-grade source of germanium. The sulfide-rich ore type (>125,000 t at 20% Zn and 250 g/t Ge) contains Fe-rich botryoidal sphalerite (type I) associated with solid hydrocarbons. This type exhibits distinctive intimately intergrown lamellar texture of high-Fe sphalerite (average 9.9 wt.% Fe and 800 ppm Ge) and a somewhat less Fe-rich sphalerite phase (average 5.5 wt.% Fe and 470 ppm Ge). Reddish-brown banded sphalerite (type II, average 5.7 wt.% Fe and 1,320 ppm Ge) is subordinately followed by galena and pyrite. The sulfide-poor “oxidized” zinc ore (up to 50 wt.% Zn; 250 to 300 ppm Ge) is a fine-grained, often friable, alteration product of the sulfide ore and associated limestone and breccia host. While some areas are dominated by carbonates and sulfates, others are enriched in silicates such as hemimorphite and willemite. The gangue assemblage includes goethite, hematite, and amorphous silica or quartz. Minor wulfenite, greenockite, cinnabar, and descloizite also occur. Willemite occurs as interstitial replacement of sphalerite and fracture fillings in the oxidized ore and can be unusually rich in Pb (up to 2.0 wt.%) and Ge (up to 4,000 ppm). Oscillatory zonation reflects trace element incorporation into willemite from the oxidation of primary Ge-bearing sphalerite and galena by siliceous aqueous fluids. The Tres Marias deposit has hybrid characteristics consisting of a primary low-temperature MVT Ge-rich Zn-Pb sulfide ore body, overprinted by Ge-rich hemimorphite, willemite, and Fe oxide mineralization.

  17. Synthetic, structural, and theoretical investigations of alkali metal germanium hydrides--contact molecules and separated ions.

    Teng, Weijie; Allis, Damian G; Ruhlandt-Senge, Karin

    2007-01-01

    The preparation of a series of crown ether ligated alkali metal (M=K, Rb, Cs) germyl derivatives M(crown ether)nGeH3 through the hydrolysis of the respective tris(trimethylsilyl)germanides is reported. Depending on the alkali metal and the crown ether diameter, the hydrides display either contact molecules or separated ions in the solid state, providing a unique structural insight into the geometry of the obscure GeH3- ion. Germyl derivatives displaying M--Ge bonds in the solid state are of the general formula [M([18]crown-6)(thf)GeH3] with M=K (1) and M=Rb (4). The compounds display an unexpected geometry with two of the GeH3 hydrogen atoms closely approaching the metal center, resulting in a partially inverted structure. Interestingly, the lone pair at germanium is not pointed towards the alkali metal, rather two of the three hydrides are approaching the alkali metal center to display M--H interactions. Separated ions display alkali metal cations bound to two crown ethers in a sandwich-type arrangement and non-coordinated GeH3- ions to afford complexes of the type [M(crown ether)2][GeH3] with M=K, crown ether=[15]crown-5 (2); M=K, crown ether=[12]crown-4 (3); and M=Cs, crown ether=[18]crown-6 (5). The highly reactive germyl derivatives were characterized by using X-ray crystallography, 1H and 13C NMR, and IR spectroscopy. Density functional theory (DFT) and second-order Møller-Plesset perturbation theory (MP2) calculations were performed to analyze the geometry of the GeH3- ion in the contact molecules 1 and 4.

  18. TANGO ARRAY II: Simulations

    Bauleo, P.; Bonifazi, C.; Filevich, A.

    The angular and energy resolution of the TANGO Array has been obtained using Monte Carlo simulations. The AIRES code, with the SYBILL hadronic collision package, was used to simulate Extended Air Showers produced by primary cosmic rays (protons and iron nuclei), with energies ranging from 1014 eV to 1018 eV. These data were fed into a realistic code which simulates the response of the detector stations (water ˇCerenkov detectors), including the electronics, pick up noise, and the signal attenuation in the connecting cabling. The trigger stage is taken into account in order to produce estimates of the trigger efficiency of the array and to check the accuracy of the reconstruction codes. This paper describes the simulations performed to obtain the expected behavior of the array, and presents the simulated data. These simulations indicate that the accuracy of the cosmic ray primary energy determination is expected to be ˜ 60 % and the precision in the measurement of the direction of arrival can be estimated as ˜ 4 degrees.

  19. Spaceborne Processor Array

    Chow, Edward T.; Schatzel, Donald V.; Whitaker, William D.; Sterling, Thomas

    2008-01-01

    A Spaceborne Processor Array in Multifunctional Structure (SPAMS) can lower the total mass of the electronic and structural overhead of spacecraft, resulting in reduced launch costs, while increasing the science return through dynamic onboard computing. SPAMS integrates the multifunctional structure (MFS) and the Gilgamesh Memory, Intelligence, and Network Device (MIND) multi-core in-memory computer architecture into a single-system super-architecture. This transforms every inch of a spacecraft into a sharable, interconnected, smart computing element to increase computing performance while simultaneously reducing mass. The MIND in-memory architecture provides a foundation for high-performance, low-power, and fault-tolerant computing. The MIND chip has an internal structure that includes memory, processing, and communication functionality. The Gilgamesh is a scalable system comprising multiple MIND chips interconnected to operate as a single, tightly coupled, parallel computer. The array of MIND components shares a global, virtual name space for program variables and tasks that are allocated at run time to the distributed physical memory and processing resources. Individual processor- memory nodes can be activated or powered down at run time to provide active power management and to configure around faults. A SPAMS system is comprised of a distributed Gilgamesh array built into MFS, interfaces into instrument and communication subsystems, a mass storage interface, and a radiation-hardened flight computer.

  20. Mir Cooperative Solar Array

    Skor, Mike; Hoffman, Dave J.

    1997-01-01

    The Mir Cooperative Solar Array (MCSA), produced jointly by the United States and Russia, was deployed on the Mir Russian space station on May 25, 1996. The MCSA is a photovoltaic electrical power system that can generate up to 6 kW. The power from the MCSA is needed to extend Mir's lifetime and to support experiments conducted there by visiting U.S. astronauts. The MCSA was brought to Mir via the Space Shuttle Atlantis on the STS-74 mission, launched November 12, 1995. This cooperative venture combined the best technology of both countries: the United States provided high-efficiency, lightweight photovoltaic panel modules, whereas Russia provided the array structure and deployment mechanism. Technology developed in the Space Station Freedom Program, and now being used in the International Space Station, was used to develop MCSA's photovoltaic panel. Performance data obtained from MCSA operation on Mir will help engineers better understand the performance of the photovoltaic panel modules in orbit. This information will be used to more accurately predict the performance of the International Space Station solar arrays. Managed by the NASA Lewis Research Center for NASA's International Space Station Program Office in Houston, Texas, the MCSA Project was completed on time and under budget despite a very aggressive schedule.

  1. Laser resonance ionization scheme development for tellurium and germanium at the dual Ti:Sa–Dye ISOLDE RILIS

    Day Goodacre, T.; Fedosseev, V.N.; Forster, L.; Marsh, B.A.; Rossel, R.E.; Rothe, S.; Veinhard, M.

    2016-01-01

    The resonance ionization laser ion source (RILIS) is the principal ion source of the ISOLDE radioactive beam facility based at CERN. Using the method of in-source laser resonance ionization spectroscopy, a transition to a new autoionizing state of tellurium was discovered and applied as part of a three-step, three-resonance, photo-ionization scheme. In a second study, a three-step, two-resonance, photo-ionization scheme for germanium was developed and the ionization efficiency was measured at ISOLDE. This work increases the range of ISOLDE RILIS ionized beams to 31 elements. Details of the spectroscopy studies are described and the new ionization schemes are summarized.

  2. Laser resonance ionization scheme development for tellurium and germanium at the dual Ti:Sa–Dye ISOLDE RILIS

    Day Goodacre, T., E-mail: thomas.day.goodacre@cern.ch [CERN, CH-1211 Geneva 23 (Switzerland); School of Physics and Astronomy, The University of Manchester, Manchester M13 9PL (United Kingdom); Fedorov, D. [Petersburg Nuclear Physics Institute, 188350 Gatchina (Russian Federation); Fedosseev, V.N.; Forster, L.; Marsh, B.A. [CERN, CH-1211 Geneva 23 (Switzerland); Rossel, R.E. [CERN, CH-1211 Geneva 23 (Switzerland); Institut für Physik, Johannes Gutenberg Universität, D-55099 Mainz (Germany); Faculty of Design, Computer Science and Media, Hochschule RheinMain, Wiesbaden (Germany); Rothe, S.; Veinhard, M. [CERN, CH-1211 Geneva 23 (Switzerland)

    2016-09-11

    The resonance ionization laser ion source (RILIS) is the principal ion source of the ISOLDE radioactive beam facility based at CERN. Using the method of in-source laser resonance ionization spectroscopy, a transition to a new autoionizing state of tellurium was discovered and applied as part of a three-step, three-resonance, photo-ionization scheme. In a second study, a three-step, two-resonance, photo-ionization scheme for germanium was developed and the ionization efficiency was measured at ISOLDE. This work increases the range of ISOLDE RILIS ionized beams to 31 elements. Details of the spectroscopy studies are described and the new ionization schemes are summarized.

  3. Theoretical demonstration of Brillouin lasing effect in racetrack resonators based on germanium waveguides in the mid-infrared.

    De Leonardis, Francesco; Troia, Benedetto; Soref, Richard A; Passaro, Vittorio M N

    2016-01-15

    In this Letter, we present a theoretical investigation of integrated racetrack Brillouin lasers based on germanium waveguides that are buried in silicon nitride and operate at a wavelength of 4 μm. General design equations in a steady-state regime have been carried out to determine the threshold power and the emitted Stokes power as a function of the resonance mismatch and coupling factor. The pulling effect as induced by the Brillouin gain dispersion and the pushing effects originated by SPM and XPM effects have been accurately investigated to predict the lasing frequency.

  4. The characteristics of a low background germanium gamma ray spectrometer at China JinPing underground Laboratory

    Mi, Yuhao; Zeng, Zhi; Cheng, Jianping; Su, Jian; Yue, Qian

    2014-01-01

    A low background germanium gamma ray spectrometer, GeTHU, has been installed at China JinPing underground Laboratory. The integral background count rate between 40 and 2700 keV was 0.6 cpm, and the origin was studied by Monte Carlo simulation. Detection limits and efficiencies were calculated for selected gamma peaks. Boric acid and silica sand samples were measured and 137Cs contamination was found in boric acid. GeTHU will be mainly used to measure environmental samples and screen materials in dark matter experiments.

  5. Characterization and performance of germanium detectors with sub-keV sensitivities for neutrino and dark matter experiments

    Soma, A. K.; Singh, M. K.; Singh, L.; Kumar, G. Kiran; Lin, F. K.; Du, Q.; Jiang, H.; Liu, S. K.; Ma, J. L.; Sharma, V.; Wang, L.; Wu, Y. C.; Yang, L. T.; Zhao, W.; Agartioglu, M.; Asryan, G.; Chang, Y. Y.; Chen, J. H.; Chuang, Y. C.; Deniz, M.; Hsu, C. L.; Hsu, Y. H.; Huang, T. R.; Jia, L. P.; Kerman, S.; Li, H. B.; Li, J.; Liao, F. T.; Liao, H. Y.; Lin, C. W.; Lin, S. T.; Marian, V.; Ruan, X. C.; Sevda, B.; Shen, Y. T.; Singh, M. K.; Singh, V.; Sonay, A.; Su, J.; Subrahmanyam, V. S.; Tseng, C. H.; Wang, J. J.; Wong, H. T.; Xu, Y.; Yang, S. W.; Yu, C. X.; Yue, Q.; Zeyrek, M.

    2016-11-01

    Germanium ionization detectors with sensitivities as low as 100 eVee (electron-equivalent energy) open new windows for studies on neutrino and dark matter physics. The relevant physics subjects are summarized. The detectors have to measure physics signals whose amplitude is comparable to that of pedestal electronic noise. To fully exploit this new detector technique, various experimental issues including quenching factors, energy reconstruction and calibration, signal triggering and selection as well as evaluation of their associated efficiencies have to be attended. The efforts and results of a research program to address these challenges are presented.

  6. A prototype High Purity Germanium detector for high resolution gamma-ray spectroscopy at high count rates

    Cooper, R.J., E-mail: rjcooper@lbl.gov [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Amman, M.; Luke, P.N. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Vetter, K. [Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Department of Nuclear Engineering, University of California, Berkeley, CA 94720 (United States)

    2015-09-21

    Where energy resolution is paramount, High Purity Germanium (HPGe) detectors continue to provide the optimum solution for gamma-ray detection and spectroscopy. Conventional large-volume HPGe detectors are typically limited to count rates on the order of ten thousand counts per second, however, limiting their effectiveness for high count rate applications. To address this limitation, we have developed a novel prototype HPGe detector designed to be capable of achieving fine energy resolution and high event throughput at count rates in excess of one million counts per second. We report here on the concept, design, and initial performance of the first prototype device.

  7. A Search of Low-Mass WIMPs with p-type Point Contact Germanium Detector in the CDEX-1 Experiment

    Zhao, W; Kang, K J; Cheng, J P; Li, Y J; Wong, H T; Lin, S T; Chang, J P; Chen, J H; Chen, Q H; Chen, Y H; Deng, Z; Du, Q; Gong, H; Hao, X Q; He, H J; He, Q J; Huang, H X; Huang, T R; Jiang, H; Li, H B; Li, J; Li, J M; Li, X; Li, X Y; Li, Y L; Lin, F K; Liu, S K; Lü, L C; Ma, H; Ma, J L; Mao, S J; Qin, J Q; Ren, J; Ruan, X C; Sharma, V; Shen, M B; Singh, L; Singh, M K; Soma, A K; Su, J; Tang, C J; Wang, J M; Wang, L; Wang, Q; Wu, S Y; Wu, Y C; Xianyu, Z Z; Xiao, R Q; Xing, H Y; Xu, F Z; Xu, Y; Xu, X J; Xue, T; Yang, L T; Yang, S W; Yi, N; Yu, C X; Yu, H; Yu, X Z; Zeng, M; Zeng, X H; Zeng, Z; Zhang, L; Zhang, Y H; Zhao, M G; Zhou, Z Y; Zhu, J J; Zhu, W B; Zhu, X Z; Zhu, Z H

    2016-01-01

    The CDEX-1 experiment conducted a search of low-mass (< 10 GeV/c2) Weakly Interacting Massive Particles (WIMPs) dark matter at the China Jinping Underground Laboratory using a p-type point-contact germanium detector with a fiducial mass of 915 g at a physics analysis threshold of 475 eVee. We report the hardware set-up, detector characterization, data acquisition and analysis procedures of this experiment. No excess of unidentified events are observed after subtraction of known background. Using 335.6 kg-days of data, exclusion constraints on the WIMP-nucleon spin-independent and spin-dependent couplings are derived.

  8. Investigation of the group growing process for monocrystalline germanium rods by Stepanov's method in a rectilinear thermal zone

    Egorov, L P; Zatulovskii, L M; Chaikin, P M; Gulyaev, Y V; Zhvirblyanskii, V Yu; Levinzon, D I; Smirnov, Yu M; Sachkov, G V

    1973-01-01

    The apparatus used had a floating former for the stable growth of 7.9 germanium rods of 8.9 mm. dia. from a crucible charge of approximately 3 kg. The control of the crystal growth front is discussed in experimental and theoretical terms. It is claimed that inspection of the crystal front during growth, made possible in this apparatus by the provision of ports in the heater screens, greatly facilitates control and increases the quality (dislocation density, specific resistance etc.) of the product. (1 refs).

  9. Laser resonance ionization scheme development for tellurium and germanium at the dual Ti:Sa-Dye ISOLDE RILIS

    Day Goodacre, T.; Fedorov, D.; Fedosseev, V. N.; Forster, L.; Marsh, B. A.; Rossel, R. E.; Rothe, S.; Veinhard, M.

    2016-09-01

    The resonance ionization laser ion source (RILIS) is the principal ion source of the ISOLDE radioactive beam facility based at CERN. Using the method of in-source laser resonance ionization spectroscopy, a transition to a new autoionizing state of tellurium was discovered and applied as part of a three-step, three-resonance, photo-ionization scheme. In a second study, a three-step, two-resonance, photo-ionization scheme for germanium was developed and the ionization efficiency was measured at ISOLDE. This work increases the range of ISOLDE RILIS ionized beams to 31 elements. Details of the spectroscopy studies are described and the new ionization schemes are summarized.

  10. Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths.

    Balram, Krishna C; Audet, Ross M; Miller, David A B

    2013-04-22

    We demonstrate the use of a subwavelength planar metal-dielectric resonant cavity to enhance the absorption of germanium photodetectors at wavelengths beyond the material's direct absorption edge, enabling high responsivity across the entire telecommunications C and L bands. The resonant wavelength of the detectors can be tuned linearly by varying the width of the Ge fin, allowing multiple detectors, each resonant at a different wavelength, to be fabricated in a single-step process. This approach is promising for the development of CMOS-compatible devices suitable for integrated, high-speed, and energy-efficient photodetection at telecommunications wavelengths.

  11. Program LEP to addition of gamma spectra from germanium detectors; Programa LEPS para suma de espectros gammas de detectores de germanio

    Romero, L.

    1986-07-01

    The LEP program, written in FORTRAN IV, performs the addition of two spectra, collected with different detectors, from the same sample. This application, adds the two gamma spectra obtained from two opposite LEPS Germanium Detectors (Low Energy Photon Spectrometer), correcting the differences (channel/energy) between both two spectra, and fitting them before adding. The total-spectrum is recorded at the computer memory as a single spectrum. The necessary equipment, to run this program is: - Two opposite germanium detectors, with their associate electronics. - Multichannel analyzer (2048 memory channel minimum) - Computer on-line interfacing to multichannel analyzer. (Author) 4 refs.

  12. Mixed Frequency Ultrasound Phased Array

    香勇; 霍健; 施克仁; 陈以方

    2004-01-01

    A mixed frequency ultrasonic phased array (MPA) was developed to improve the focus, in which the element excitation frequencies are not all the same as in a normal constant frequency phased array. A theoretical model of the mixed frequency phased array based on the interference principle was used to simulate the array's sound distribution. The pressure intensity in the array focal area was enhanced and the scanning area having effective contrast resolution was enlarged. The system is especially useful for high intensity focused ultrasound (HIFU) with more powerful energy and ultrasound imaging diagnostics with improved signal to noise ratios, improved beam forming and more uniform imaging quality.

  13. EVALUATION OF THE IMPACT OF THE DEFENSE WASTE PROCESSING FACILITY (DWPF) LABORATORY GERMANIUM OXIDE USE ON RECYCLE TRANSFERS TO THE H-TANK FARM

    Jantzen, C.; Laurinat, J.

    2011-08-15

    When processing High Level Waste (HLW) glass, the Defense Waste Processing Facility (DWPF) cannot wait until the melt or waste glass has been made to assess its acceptability, since by then no further changes to the glass composition and acceptability are possible. Therefore, the acceptability decision is made on the upstream feed stream, rather than on the downstream melt or glass product. This strategy is known as 'feed forward statistical process control.' The DWPF depends on chemical analysis of the feed streams from the Sludge Receipt and Adjustment Tank (SRAT) and the Slurry Mix Evaporator (SME) where the frit plus adjusted sludge from the SRAT are mixed. The SME is the last vessel in which any chemical adjustments or frit additions can be made. Once the analyses of the SME product are deemed acceptable, the SME product is transferred to the Melter Feed Tank (MFT) and onto the melter. The SRAT and SME analyses have been analyzed by the DWPF laboratory using a 'Cold Chemical' method but this dissolution did not adequately dissolve all the elemental components. A new dissolution method which fuses the SRAT or SME product with cesium nitrate (CsNO{sub 3}), germanium (IV) oxide (GeO{sub 2}) and cesium carbonate (Cs{sub 2}CO{sub 3}) into a cesium germanate glass at 1050 C in platinum crucibles has been developed. Once the germanium glass is formed in that fusion, it is readily dissolved by concentrated nitric acid (about 1M) to solubilize all the elements in the SRAT and/or SME product for elemental analysis. When the chemical analyses are completed the acidic cesium-germanate solution is transferred from the DWPF analytic laboratory to the Recycle Collection Tank (RCT) where the pH is increased to {approx}12 M to be released back to the tank farm and the 2H evaporator. Therefore, about 2.5 kg/yr of GeO{sub 2}/year will be diluted into 1.4 million gallons of recycle. This 2.5 kg/yr of GeO{sub 2} may increase to 4 kg/yr when improvements are

  14. Gamma-ray multiplicity measurement of the spontaneous fission of {sup 252}Cf in a segmented HPGe/BGO detector array

    Bleuel, D.L., E-mail: bleuel1@llnl.go [Lawrence Livermore National Laboratory, Livermore, CA 94551 (United States); Bernstein, L.A.; Burke, J.T. [Lawrence Livermore National Laboratory, Livermore, CA 94551 (United States); Gibelin, J. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Heffner, M.D. [Lawrence Livermore National Laboratory, Livermore, CA 94551 (United States); Mintz, J. [Nuclear Engineering Department, University of California, Berkeley, CA 94720 (United States); Norman, E.B. [Lawrence Livermore National Laboratory, Livermore, CA 94551 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Nuclear Engineering Department, University of California, Berkeley, CA 94720 (United States); Phair, L. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Scielzo, N.D.; Sheets, S.A.; Snyderman, N.J.; Stoyer, M.A. [Lawrence Livermore National Laboratory, Livermore, CA 94551 (United States); Wiedeking, M. [Lawrence Livermore National Laboratory, Livermore, CA 94551 (United States); Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2010-12-21

    Coincident {gamma} rays from a {sup 252}Cf source were measured using an array of six segmented high-purity germanium (HPGe) Clover detectors each enclosed by 16 bismuth-germanate (BGO) detectors. The detectors were arranged in a cubic pattern around a 1{mu}Ci{sup 252}Cf source to cover a large solid angle for {gamma}-ray measurement with a reasonable reconstruction of the multiplicity. Neutron multiplicity was determined in certain cases by identifying the prompt {gamma} rays from individual fission fragment pairs. Multiplicity distributions from previous experiments and theoretical models were convolved with the response function of the array and compared to the present results. These results suggest a {gamma}-ray multiplicity spectrum broader than previous measurements and models, and provide no evidence of correlation with neutron multiplicity.

  15. Gamma-ray multiplicity measurement of the spontaneous fission decay of 252Cf in a segmented HPGe/BGO detector array

    Bleuel, D L; Bernstein, L A; Burke, J T; Gibelin, J; Heffner, M D; Mintz, J; Norman, E B; Phair, L; Scielzo, N D; Sheets, S A; Snyderman, N J; Stoyer, M A; Wiedeking, M

    2008-04-23

    Coincident {gamma} rays from a {sup 252}Cf source were measured using an array of six segmented high-purity germanium (HPGe) Clover detectors each enclosed by 16 bismuth-germanate (BGO) detectors. The detectors were arranged in a cubic pattern around a 1 {micro}Ci {sup 252}Cf source to cover a large solid angle for {gamma}-ray measurement with a reasonable reconstruction of the multiplicity. Neutron multiplicity was determined in certain cases by identifying the prompt {gamma} rays from individual fission fragment pairs. Multiplicity distributions from previous experiments and theoretical models were convolved with the response function of the array and compared to the present results. These results suggest a {gamma}-ray multiplicity spectrum broader than previous measurements and models, and provide no evidence of correlation with neutron multiplicity.

  16. Phase transition between the CaCl2-type and α-PbO2-type structures of germanium dioxide

    Ono, Shigeaki; Tsuchiya, Taku; Hirose, Kei; Ohishi, Yasuo

    2003-10-01

    Observations of the phase transition between the CaCl2-type (Pnnm) and α-PbO2-type (Pbcn) structures of germanium dioxide (GeO2) were carried out using quench and in situ x-ray diffraction methods in a laser-heated diamond anvil cell (LHDAC). First-principle theoretical simulations were also performed to complement the experimental results. The experiments showed that the transition had a positive dP/dT dependence. The phase boundary between the CaCl2-type and α-PbO2-type structures in the temperature range 1500 2400 K was determined to be P (GPa)=(53±3)+(0.011±0.005)(T-1800) (K) based on the equation of state of platinum and the ruby scale. The positive slope of the transition is consistent with the known phase boundary between the CaCl2-type and α-PbO2-type structures of tin dioxide (SnO2) as germanium dioxide analog and theoretical simulation results. However, our results do not agree with the slope of the phase boundary of silica (SiO2), which has been reported to have a negative slope.

  17. Antiviral effect of dietary germanium biotite supplementation in pigs experimentally infected with porcine reproductive and respiratory syndrome virus.

    Jung, Bock-Gie; Lee, Jin-A; Lee, Bong-Joo

    2013-01-01

    Germanium biotite (GB) is an aluminosilicate mineral containing 36 ppm germanium. The present study was conducted to better understand the effects of GB on immune responses in a mouse model, and to demonstrate the clearance effects of this mineral against Porcine reproductive and respiratory syndrome virus (PRRSV) in experimentally infected pigs as an initial step towards the development of a feed supplement that would promote immune activity and help prevent diseases. In the mouse model, dietary supplementation with GB enhanced concanavalin A (ConA)-induced lymphocyte proliferation and increased the percentage of CD3+CD8+ T lymphocytes. In pigs experimentally infected with PRRSV, viral titers in lungs and lymphoid tissues from the GB-fed group were significantly decreased compared to those of the control group 12 days post-infection. Corresponding histopathological analyses demonstrated that GB-fed pigs displayed less severe pathological changes associated with PRRSV infection compared to the control group, indicating that GB promotes PRRSV clearance. These antiviral effects in pigs may be related to the ability of GB to increase CD3+CD8+ T lymphocyte production observed in the mice. Hence, this mineral may be an effective feed supplement for increasing immune activity and preventing disease.

  18. Measurement of the low-energy quenching factor in germanium using an $^{88}$Y/Be photoneutron source

    Scholz, B J; Collar, J I; Privitera, P; Robinson, A E

    2016-01-01

    We employ an $^{88}$Y/Be photoneutron source to derive the quenching factor for neutron-induced nuclear recoils in germanium, probing recoil energies from a few hundred eV$_{nr}$ to 8.5keV$_{nr}$. A comprehensive Monte Carlo simulation of our setup is compared to experimental data employing a Lindhard model with a free electronic energy loss $k$ and an adiabatic correction for sub-keV$_{nr}$ nuclear recoils. The best fit $k=0.179\\pm 0.001$ obtained using a Monte Carlo Markov Chain (MCMC) ensemble sampler is in good agreement with previous measurements, confirming the adequacy of the Lindhard model to describe the stopping of few-keV ions in germanium crystals at a temperature of $\\sim$77 K. This value of $k$ corresponds to a quenching factor of 13.7 % to 25.3 % for nuclear recoil energies between 0.3 keV$_{nr}$ and 8.5 keV$_{nr}$, respectively.

  19. Compact Transducers and Arrays

    2005-05-01

    Soc. Am., 104, pp.64-71 44 25.Decarpigny, J.N., J.C. Debus, B. Tocquet & D. Boucher. 1985. "In-Air Analysis Of Piezoelectric Tonpilz Transducers In A... Transducers and Arrays Final Report May 2005 Contacts: Dr. Robert E. Newnham The Pennsylvania State University, 251 MRL, University Park, PA 16802 phone...814) 865-1612 fax: (814) 865-2326 email: ....c xx.....i.i.....ht.. .u a.p.u..c.e.du. Dr. Richard J. Meyer, Jr. Systems Engineering ( Transducers ), ARL

  20. Pulsed laser ablation of Germanium under vacuum and hydrogen environments at various fluences

    Iqbal, Muhammad Hassan; Bashir, Shazia; Rafique, Muhammad Shahid; Dawood, Asadullah; Akram, Mahreen; Mahmood, Khaliq; Hayat, Asma; Ahmad, Riaz; Hussain, Tousif; Mahmood, Arshad

    2015-07-01

    Laser fluence and ambient environment play a significant role for the formation and development of the micro/nano-structures on the laser irradiated targets. Single crystal (1 0 0) Germanium (Ge) has been ablated under two environments of vacuum (10-3 Torr) and hydrogen (100 Torr) at various fluences ranging from 4.5 J cm-2 to 6 J cm-2. For this purpose KrF Excimer laser with wavelength of 248 nm, pulse duration of 18 ns and repetition rate of 20 Hz has been employed. Surface morphology has been observed by Scanning Electron Microscope (SEM). Whereas, structural modification of irradiated targets was explored by Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy. Electrical conductivity of the irradiated Ge is measured by four probe method. SEM analysis exhibits the formation of laser-induced periodic surface structures (LIPSS), cones and micro-bumps in both ambient environments (vacuum and hydrogen). The formation as well as development of these structures is strongly dependent upon the laser fluence and environmental conditions. The periodicity of LIPSS or ripples varies from 38 μm to 60 μm in case of vacuum whereas in case of hydrogen environment, the periodicity varies from 20 μm to 45 μm. The difference in number of ripples and periodicity as well as in shape and size of cones and bumps in vacuum and hydrogen is explained on the basis of confinement and shielding effect of plasma. FTIR spectroscopy reveals that no new bands are formed for laser ablated Ge under vacuum, whereas Csbnd H stretching vibration band is formed for two moderate fluences (5 J cm-2 and 5.5 J cm-2) in case of ablation in hydrogen. Raman spectroscopy shows that no new bands are formed in case of ablation in both environments; however a slight Raman shift is observed which is attributed to laser-induced stresses. The electrical conductivity of the irradiated Ge increases with increasing fluence and is also dependent upon the environment as well as grown structures.

  1. Comparison of liquid-state anomalies in Stillinger-Weber models of water, silicon, and germanium

    Dhabal, Debdas; Chakravarty, Charusita; Molinero, Valeria; Kashyap, Hemant K.

    2016-12-01

    We use molecular dynamics simulations to compare and contrast the liquid-state anomalies in the Stillinger-Weber models of monatomic water (mW), silicon (Si), and germanium (Ge) over a fairly wide range of temperatures and densities. The relationships between structure, entropy, and mobility, as well as the extent of the regions of anomalous behavior, are discussed as a function of the degree of tetrahedrality. We map out the cascade of density, structural, pair entropy, excess entropy, viscosity, and diffusivity anomalies for these three liquids. Among the three liquids studied here, only mW displays anomalies in the thermal conductivity, and this anomaly is evident only at very low temperatures. Diffusivity and viscosity, on the other hand, show pronounced anomalous regions for the three liquids. The temperature of maximum density of the three liquids shows re-entrant behavior consistent with either singularity-free or liquid-liquid critical point scenarios proposed to explain thermodynamic anomalies. The order-map, which shows the evolution of translational versus tetrahedral order in liquids, is different for Ge than for Si and mW. We find that although the monatomic water reproduces several thermodynamic and dynamic properties of rigid-body water models (e.g., SPC/E, TIP4P/2005), its sequence of anomalies follows, the same as Si and Ge, the silica-like hierarchy: the region of dynamic (diffusivity and viscosity) anomalies encloses the region of structural anomalies, which in turn encloses the region of density anomaly. The hierarchy of the anomalies based on excess entropy and Rosenfeld scaling, on the other hand, reverses the order of the structural and dynamic anomalies, i.e., predicts that the three Stillinger-Weber liquids follow a water-like hierarchy of anomalies. We investigate the scaling of diffusivity, viscosity, and thermal conductivity with the excess entropy of the liquid and find that for dynamical properties that present anomalies there is no

  2. Synthesis of Nine-atom Deltahedral Zintl Ions of Germanium and their Functionalization with Organic Groups

    Gillett-Kunnath, Miriam M.; Sevov, Slavi C.

    2012-01-01

    Although the first studies of Zintl ions date between the late 1890's and early 1930's they were not structurally characterized until many years later.1,2 Their redox chemistry is even younger, just about ten years old, but despite this short history these deltahedral clusters ions E9n- (E = Si, Ge, Sn, Pb; n = 2, 3, 4) have already shown interesting and diverse reactivity and have been at the forefront of rapidly developing and exciting new chemistry.3-6 Notable milestones are the oxidative coupling of Ge94- clusters to oligomers and infinite chains,7-19 their metallation,14-16,20-25 capping by transition-metal organometallic fragments,26-34 insertion of a transition-metal atom at the center of the cluster which is sometimes combined with capping and oligomerization,35-47 addition of main-group organometallic fragments as exo-bonded substituents,48-50 and functionalization with various organic residues by reactions with organic halides and alkynes.51-58 This latter development of attaching organic fragments directly to the clusters has opened up a new field, namely organo-Zintl chemistry, that is potentially fertile for further synthetic explorations, and it is the step-by-step procedure for the synthesis of germanium-divinyl clusters described herein. The initial steps outline the synthesis of an intermetallic precursor of K4Ge9 from which the Ge94- clusters are extracted later in solution. This involves fused-silica glass blowing, arc-welding of niobium containers, and handling of highly air-sensitive materials in a glove box. The air-sensitive K4Ge9 is then dissolved in ethylenediamine in the box and then alkenylated by a reaction with Me3SiC≡CSiMe3. The reaction is followed by electrospray mass spectrometry while the resulting solution is used for obtaining single crystals containing the functionalized clusters [H2C=CH-Ge9-CH=CH2]2-. For this purpose the solution is centrifuged, filtered, and carefully layered with a toluene solution of 18-crown-6. Left

  3. Silicon germanium as a novel mask for silicon deep reactive ion etching

    Serry, Mohamed Y.

    2013-10-01

    This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (01:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

  4. Optimization, analysis, and fabrication of silicon-germanium heterojunction bipolar transistors

    Kwok, Kai Hay

    This thesis deals with the optimization, analysis, and fabrication of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). Two vertical base profile optimization studies for improving the high-frequency performance of SiGe HBTs are presented. In the first study, the Ge profile is optimized for the minimum contribution of the emitter and base delay times to the transition frequency in the low-injection regime. A fixed Ge dose is used as the optimization constraint. Non-quasi-static effects at high frequencies are taken into account. It is shown that the graded Ge profile is more effective than the box Ge profile in minimizing the two delay time contributors for SiGe HBTs with today's typical emitter and base dimensions. In the second optimization study, the base doping and Ge profiles are optimized for minimum base delay time in low- and high-injection regimes before the onset of Kirk effect. Fixed Ge dose, intrinsic base resistance, and base concentration near the emitter are adopted as optimization constraints. The effect of plasma-induced bandgap narrowing in high injection is considered. An iteration scheme for calculating the base delay time for a wide range of collector current densities is developed. It is shown that the retrograde base doping profile with graded Ge profiles gives the minimum base delay time in both low- and high-injection regimes. An analysis of the retrograde portion of a base retrograde doping profile in a SiGe HBT is also performed. A closed-form analytical expression of the base delay time is derived with various physical effects taken into consideration. The relative importance of the physical effects is assessed. It is found that the adverse effect of the retrograde portion of the base retrograde doping profile on the base delay time is less pronounced than expected, especially when a high Ge grading exists across the base. It is also shown that the effect of the field dependency of the electron diffusivity needs to be

  5. Alternative materials for next-generation transistors: High-k/germanium-based MOSFET

    Hsueh, Chein-Lan

    Electronic devices that make up 99% of the computer processor and memory market are based on silicon (semiconductor) and silicon dioxide (insulator) technology. Unfortunately the key transistor gate stack structure within the "traditional" technology has reached an intrinsic physical scaling limit; the ultrathin gate oxide, already at 1nm thickness, cannot be made thinner without resulting in an intolerably high leakage current and reduced drive current. This limitation can be avoided by replacing the thin gate dielectric with a thicker film of an alternative material with a permittivity higher than that of SiO2, an accomplishing that has been realized in production just as this thesis goes to press. To further increase device performance, replacing the Si semiconductor with germanium as an alternative channel material is an attractive option for its high mobility and narrow band gap. However, the lack of a stable insulating oxide with high quality electrical properties prevents the fabrication of competitive Ge-based metal oxide semiconductor field effect transistors (MOSFETs). This dissertation reports the study of potential future-generation transistors with high-k dielectrics (HfO2 and Al2O3) on Ge substrates. A brief review of current research and development is first given followed by an introduction of the thin film characterization techniques used in this work. Various cleaning treatments as well as surface passivation methods using wet chemistry have been investigated on Ge substrates. Next, thin high-k dielectric films of HfO2 and Al2O3 have been deposited on Ge using atomic layer deposition (ALD). ALD permits films to be grown with monolayer control and excellent film conformality. Physical, chemical and electrical characterization has been performed on the multilayer film structures. Optimization of the film growth has been developed and we have demonstrated high quality with Au/HfO2/Ge nMOS devices. Capacitance-voltage electrical measurements show that

  6. Nonlinear phased array imaging

    Croxford, Anthony J.; Cheng, Jingwei; Potter, Jack N.

    2016-04-01

    A technique is presented for imaging acoustic nonlinearity within a specimen using ultrasonic phased arrays. Acoustic nonlinearity is measured by evaluating the difference in energy of the transmission bandwidth within the diffuse field produced through different focusing modes. The two different modes being classical beam forming, where delays are applied to different element of a phased array to physically focus the energy at a single location (parallel firing) and focusing in post processing, whereby one element at a time is fired and a focused image produced in post processing (sequential firing). Although these two approaches are linearly equivalent the difference in physical displacement within the specimen leads to differences in nonlinear effects. These differences are localized to the areas where the amplitude is different, essentially confining the differences to the focal point. Direct measurement at the focal point are however difficult to make. In order to measure this the diffuse field is used. It is a statistical property of the diffuse field that it represents the total energy in the system. If the energy in the diffuse field for both the sequential and parallel firing case is measured then the difference between these, within the input signal bandwidth, is largely due to differences at the focal spot. This difference therefore gives a localized measurement of where energy is moving out of the transmission bandwidth due to nonlinear effects. This technique is used to image fatigue cracks and other damage types undetectable with conventional linear ultrasonic measurements.

  7. Microplasma generating array

    Hopwood, Jeffrey A.; Wu, Chen; Hoskinson, Alan R.; Sonkusale, Sameer

    2016-10-04

    A microplasma generator includes first and second conductive resonators disposed on a first surface of a dielectric substrate. The first and second conductive resonators are arranged in line with one another with a gap defined between a first end of each resonator. A ground plane is disposed on a second surface of the dielectric substrate and a second end of each of the first and second resonators is coupled to the ground plane. A power input connector is coupled to the first resonator at a first predetermined distance from the second end chosen as a function of the impedance of the first conductive resonator. A microplasma generating array includes a number of resonators in a dielectric material substrate with one end of each resonator coupled to ground. A micro-plasma is generated at the non-grounded end of each resonator. The substrate includes a ground electrode and the microplasmas are generated between the non-grounded end of the resonator and the ground electrode. The coupling of each resonator to ground may be made through controlled switches in order to turn each resonator off or on and therefore control where and when a microplasma will be created in the array.

  8. Electromagnetically Clean Solar Arrays

    Stem, Theodore G.; Kenniston, Anthony E.

    2008-01-01

    The term 'electromagnetically clean solar array' ('EMCSA') refers to a panel that contains a planar array of solar photovoltaic cells and that, in comparison with a functionally equivalent solar-array panel of a type heretofore used on spacecraft, (1) exhibits less electromagnetic interferences to and from other nearby electrical and electronic equipment and (2) can be manufactured at lower cost. The reduction of electromagnetic interferences is effected through a combination of (1) electrically conductive, electrically grounded shielding and (2) reduction of areas of current loops (in order to reduce magnetic moments). The reduction of cost is effected by designing the array to be fabricated as a more nearly unitary structure, using fewer components and fewer process steps. Although EMCSAs were conceived primarily for use on spacecraft they are also potentially advantageous for terrestrial applications in which there are requirements to limit electromagnetic interference. In a conventional solar panel of the type meant to be supplanted by an EMCSA panel, the wiring is normally located on the back side, separated from the cells, thereby giving rise to current loops having significant areas and, consequently, significant magnetic moments. Current-loop geometries are chosen in an effort to balance opposing magnetic moments to limit far-0field magnetic interactions, but the relatively large distances separating current loops makes full cancellation of magnetic fields problematic. The panel is assembled from bare photovoltaic cells by means of multiple sensitive process steps that contribute significantly to cost, especially if electomagnetic cleanliness is desired. The steps include applying a cover glass and electrical-interconnect-cell (CIC) sub-assemble, connecting the CIC subassemblies into strings of series-connected cells, laying down and adhesively bonding the strings onto a panel structure that has been made in a separate multi-step process, and mounting the

  9. Silicon Germanium (SiGe) Radioisotope Thermoelectric Generator (RTG) Program for space missions. Fifteenth technical progress report, August 1-31, 1980

    Whitmore, C. W.; Silverman, G.

    1980-01-01

    This program consists of the following three tasks: Multi-Hundred Watt RTG for the Galileo Probe Mission; Reestablishment of Silicon Germanium Unicouple Capability; and General Purpose Heat Source RTG for the International Solar Polar and Galileo Orbiter Missions. Details of program progress for each task, including a milestone schedule and a discussion of current problem areas (if any) are presented.

  10. Effects of germanium biotite supplement on immune responses of vaccinated mini-pigs to foot-and-mouth disease virus challenge.

    Jung, Myunghwan; Park, Hong-Tea; Park, Jong-Hyeon; Lee, Kwang-Nyeong; Shin, Seung Won; Shin, Min-Kyoung; Sung, Kyung Yong; Jung, Yeon-Kwon; Kim, Byounghan; Yoo, Han Sang

    2015-01-01

    Since the outbreaks of foot-and-mouth disease (FMD) in South Korea in 2010-2011, a trivalent vaccine has been used as a routine vaccination. Despite the high efficacy of the trivalent vaccine, low antibody formation was reported in the pig industry and there is considerable concern about the ability of the vaccine to protect against the Andong strain responsible for recent outbreaks in South Korea. To overcome these problems, immunostimulators have been widely used to improve vaccine efficacy in South Korea, although without any scientific evidence. Based on the current situation, the aim of this study was to investigate the effects of germanium biotite, a feed supplement used to enhance the immune system, on the immune responses to FMD vaccination through the Andong strain challenge experiment in trivalent vaccinated pigs. Following the challenge, the germanium biotite-fed pigs showed high levels of IL-8 in serum, and increased cellular immune responses to stimulation with the Andong strain antigen compared to nonsupplemented pigs. In addition, higher FMD virus (FMDV) neutralizing antibody titers were detected in the germanium biotite-fed group than in the nonsupplemented group before the challenge. The findings of this study indicate that germanium biotite supplement might enhance immune responses to the FMD vaccine in pigs.

  11. Electrodynamic Arrays Having Nanomaterial Electrodes

    Trigwell, Steven (Inventor); Biris, Alexandru S. (Inventor); Calle, Carlos I. (Inventor)

    2013-01-01

    An electrodynamic array of conductive nanomaterial electrodes and a method of making such an electrodynamic array. In one embodiment, a liquid solution containing nanomaterials is deposited as an array of conductive electrodes on a substrate, including rigid or flexible substrates such as fabrics, and opaque or transparent substrates. The nanomaterial electrodes may also be grown in situ. The nanomaterials may include carbon nanomaterials, other organic or inorganic nanomaterials or mixtures.

  12. Bioavailable concentrations of germanium and rare earth elements in soil as affected by low molecular weight organic acids and root exudates

    Wiche, Oliver; Székely, Balázs; Kummer, Nicolai-Alexeji; Heinemann, Ute; Tesch, Silke; Heilmeier, Hermann

    2014-05-01

    Availability of elements in soil to plant is generally dependent on the solubility and mobility of elements in soil solution which is controlled by soil, elemental properties and plant-soil interactions. Low molecular organic acids or other root exudates may increase mobility and availability of certain elements for plants as an effect of lowering pH in the rhizosphere and complexation. However, these processes take place in a larger volume in soil, therefore to understand their nature, it is also important to know in which layers of the soil what factors modify these processes. In this work the influence of citric acid and root exudates of white lupin (Lupinus albus L.) on bioavailable concentrations of germanium, lanthan, neodymium, gadolinium and erbium in soil solution and uptake in root and shoot of rape (Brassica napus L.), comfrey (Symphytum officinale L.), common millet (Panicum milliaceum L.) and oat (Avena sativa L.) was investigated. Two different pot experiments were conducted: (1) the mentioned plant species were treated with nutrient solutions containing various amount of citric acid; (2) white lupin was cultivated in mixed culture (0 % lupin, 33 % lupin) with oat (Avena sativa L.) and soil solution was obtained by plastic suction cups placed at various depths. As a result, addition of citric acid significantly increased germanium concentrations in plant tissue of comfrey and rape and increased translocation of germanium, lanthan, neodymium, gadolinium and erbium from root to shoot. The cultivation of white lupin in mixed culture with oat led to significantly higher concentrations of germanium and increasing concentrations of lanthan, neodymium, gadolinium and erbium in soil solution and aboveground plant tissue. In these pots concentrations of citric acid in soil solution were significantly higher than in the control. The results show, that low molecular organic acids exuded by plant roots are of great importance for the mobilization of germanium

  13. Cytotoxicity of surface-functionalized silicon and germanium nanoparticles: the dominant role of surface charges

    Bhattacharjee, Sourav; Rietjens, Ivonne M. C. M.; Singh, Mani P.; Atkins, Tonya M.; Purkait, Tapas K.; Xu, Zejing; Regli, Sarah; Shukaliak, Amber; Clark, Rhett J.; Mitchell, Brian S.; Alink, Gerrit M.; Marcelis, Antonius T. M.; Fink, Mark J.; Veinot, Jonathan G. C.; Kauzlarich, Susan M.; Zuilhof, Han

    2013-05-01

    Although it is frequently hypothesized that surface (like surface charge) and physical characteristics (like particle size) play important roles in cellular interactions of nanoparticles (NPs), a systematic study probing this issue is missing. Hence, a comparative cytotoxicity study, quantifying nine different cellular endpoints, was performed with a broad series of monodisperse, well characterized silicon (Si) and germanium (Ge) NPs with various surface functionalizations. Human colonic adenocarcinoma Caco-2 and rat alveolar macrophage NR8383 cells were used to clarify the toxicity of this series of NPs. The surface coatings on the NPs appeared to dominate the cytotoxicity: the cationic NPs exhibited cytotoxicity, whereas the carboxylic acid-terminated and hydrophilic PEG- or dextran-terminated NPs did not. Within the cationic Si NPs, smaller Si NPs were more toxic than bigger ones. Manganese-doped (1% Mn) Si NPs did not show any added toxicity, which favors their further development for bioimaging. Iron-doped (1% Fe) Si NPs showed some added toxicity, which may be due to the leaching of Fe3+ ions from the core. A silica coating seemed to impart toxicity, in line with the reported toxicity of silica. Intracellular mitochondria seem to be the target for the toxic NPs since a dose-, surface charge- and size-dependent imbalance of the mitochondrial membrane potential was observed. Such an imbalance led to a series of other cellular events for cationic NPs, like decreased mitochondrial membrane potential (ΔΨm) and ATP production, induction of ROS generation, increased cytoplasmic Ca2+ content, production of TNF-α and enhanced caspase-3 activity. Taken together, the results explain the toxicity of Si NPs/Ge NPs largely by their surface characteristics, provide insight into the mode of action underlying the observed cytotoxicity, and give directions on synthesizing biocompatible Si and Ge NPs, as this is crucial for bioimaging and other applications in for example

  14. Study on Synthesis, Characterization and Biological Activities of Rutin-germanium%芦丁锗的合成、表征及生物活性研究

    翟广玉; 渠文涛; 朱玮; 闫影影; 王素红; 王敬萍

    2013-01-01

    Rutin-germanium was synthesized from rutin and germanium in the alkaline solution and the chelation position was characterized by UV ,IR and H NMR. The number of the crystal water and the content of germanium in the complex were determined using thermal analysis. Methyl thiazolyl tetrazolium blue ( MTT) experiments on the human cervicalca-ncer Hela cell,lung cancer SPC-A-1 cells and human esophageal cancer EC9706 cells proved that rutin-germanium had no anti-tumor activity. DPPH radical scavenging experiments showed that the radical scavenging capacity of rutin-germanium was stronger than rutin.%芦丁在碱溶液中,与氧化锗反应生成芦丁锗;通过UV、IR、1H NMR,确定了锗离子与芦丁的螯合位置;通过差热分析,确定了配合物中结晶水的数量和锗的含量;通过四甲基偶氮唑蓝(MTT)法和抗氧化性实验,测定了芦丁锗的生物活性.结果显示:芦丁锗对人子宫颈癌Hela细胞、肺癌SPC-A-1细胞及人食管癌EC9706细胞均没有抗肿瘤活性;清除DPPH自由基实验显示,芦丁锗较芦丁具有更强的清除自由基能力.

  15. Cascading Constrained 2-D Arrays using Periodic Merging Arrays

    Forchhammer, Søren; Laursen, Torben Vaarby

    2003-01-01

    We consider a method for designing 2-D constrained codes by cascading finite width arrays using predefined finite width periodic merging arrays. This provides a constructive lower bound on the capacity of the 2-D constrained code. Examples include symmetric RLL and density constrained codes....... Numerical results for the capacities are presented....

  16. An overview of uncooled infrared sensors technology based on amorphous silicon and silicon germanium alloys

    Ambrosio, Roberto; Mireles, Jose Jr. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, 32310 Chihuahua (Mexico); Moreno, Mario; Torres, Alfonso; Kosarev, Andrey [National Institute for Astrophysics Optics and Electronics INAOE, Luis E. Erro 1, PO Box 51 and 216, 7200 Puebla (Mexico); Heredia, Aurelio [Universidad Popular Autonoma del Estado de Puebla, 21 sur 1103 Col. Santiago, 72160 Puebla (Mexico)

    2010-04-15

    At the present time there are commercially available large un-cooled micro-bolometer arrays (as large as 1024 x 768 pixels) for a variety of thermal imaging applications. Different thermo-sensing materials have been employed as thermo sensing elements as Vanadium Oxide (VO{sub x}), metals, and amorphous and polycrystalline semiconductors. Those materials present good characteristics but also have some disadvantages. As a consequence none of the commercially available arrays contain optimum pixels with an optimum thermo-sensing material. This paper reviews the development of the un-cooled bolometer technology and the research achievements on this area, with special attention on the key factors that would lead to improve the pixels performance characteristics. The work considers the R and D of microbolometer arrays and the integration with MEMS and IC technologies. A comparative study with the state of the art and data reported in literature is presented. Finally, further directions of uncooled bolometer based in thin films materials are also discussed in this paper. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Array biosensor: recent developments

    Golden, Joel P.; Rowe-Taitt, Chris A.; Feldstein, Mark J.; Ligler, Frances S.

    1999-05-01

    A fluorescence-based immunosensor has been developed for simultaneous analyses of multiple samples for 1 to 6 different antigens. A patterned array of recognition antibodies immobilized on the surface of a planar waveguide is used to 'capture' analyte present in samples. Bound analyte is then quantified by means of fluorescent detector molecules. Upon excitation of the fluorescent label by a small diode laser, a CCD camera detects the pattern of fluorescent antigen:antibody complexes on the sensor surface. Image analysis software correlates the position of fluorescent signals with the identity of the analyte. A new design for a fluidics distribution system is shown, as well as results from assays for physiologically relevant concentrations of staphylococcal enterotoxin B (SEB), F1 antigen from Yersinia pestis, and D- dimer, a marker of sepsis and thrombotic disorders.

  18. The Submillimeter Array Polarimeter

    Marrone, Daniel P

    2008-01-01

    We describe the Submillimeter Array (SMA) Polarimeter, a polarization converter and feed multiplexer installed on the SMA. The polarimeter uses narrow-band quarter-wave plates to generate circular polarization sensitivity from the linearly-polarized SMA feeds. The wave plates are mounted in rotation stages under computer control so that the polarization handedness of each antenna is rapidly selectable. Positioning of the wave plates is found to be highly repeatable, better than 0.2 degrees. Although only a single polarization is detected at any time, all four cross correlations of left- and right-circular polarization are efficiently sampled on each baseline through coordinated switching of the antenna polarizations in Walsh function patterns. The initial set of anti-reflection coated quartz and sapphire wave plates allows polarimetry near 345 GHz; these plates have been have been used in observations between 325 and 350 GHz. The frequency-dependent cross-polarization of each antenna, largely due to the varia...

  19. Improving Germanium Distillation Recovery Rate from Coal Dust%提高含锗煤烟尘氯化蒸馏回收率的工艺研究

    普世坤; 兰尧中; 靳林; 肖春宏

    2012-01-01

    针对常规盐酸蒸馏分离提锗法处理,火法冶炼褐煤得到含锗煤烟尘回收率较低的问题,研究了一种经碱加热预处理后再进行蒸馏回收锗的方法,即通过加入锗煤烟尘重量20%~30%的氢氧化钠、2~3倍的水与锗煤烟尘混合搅拌均匀后,再加热至90 ~95℃并搅拌充分反应3~4h,使锗煤烟尘中酸难溶的四面体型GeO2,CeO及GeS等形态的锗与氢氧化钠充分反应转变为盐酸可溶的锗酸钠.同时氢氧化钠与包裹锗的煤焦油发生皂化、或与二氧化硅发生反应后形成偏硅酸钠进入溶液,使被煤焦油、二氧化硅包裹的锗释放出来后会进一步与氢氧化钠反应形成锗酸钠.然后升温至碱处理后液沸腾,蒸发浓缩至处理后液的体积与锗烟尘的重量相当,以蒸发掉处理后溶液中过多水分.再加入烟尘重量8~9倍的10 mol·L-1工业盐酸中和过量的氢氧化钠,升温至90 ~ 110℃蒸馏分离得到四氯化锗,锗回收率可以提高5.39%~33.18%.该工艺适合烧失量较大的煤锗烟尘,具有锗回收率高,工艺流程简短,设备简单,可操作性强,辅料消耗较少,运行成本较低,对环境无污染等特点.%According to the conventional hydrochloric acid distillation separation of germanium extracting method, while low recovery rate of pyrometallurgical lignite containing germanium from coal dust, a way was studied by alkali heat pretreatment followed by distillation method for recovering germanium, adding germanium coal dust weight of 20%~ 30% NaOH, 2 ~ 3 times water and germanium coal soot mixed evenly, and heated to 90 ~ 95 ℃ to react 3 ~ 4 h, made the germanium coal dust in the acid insoluble tetrahedral GeO2, GeO and GeS forms of germanium with sodium hydroxide reacting fully into hydrochloric acid soluble sodium germanate. At the same time, sodium hydroxide with the package of germanium silicon dioxide, the coal tar saponification reacted and formed sodium silicate

  20. Large scale biomimetic membrane arrays

    Hansen, Jesper Søndergaard; Perry, Mark; Vogel, Jörg

    2009-01-01

    -structured 8 x 8 aperture partition arrays with average aperture diameters of 301 +/- 5 mu m. We addressed the electro-physical properties of the lipid bilayers established across the micro-structured scaffold arrays by controllable reconstitution of biotechnological and physiological relevant membrane...