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Sample records for 14-crystal germanium array

  1. GERmanium detector array, GERDA

    International Nuclear Information System (INIS)

    The GERmanium Detector Array, GERDA, is designed to search for 'neutrinoless double beta decay' (0ν2β) in 76Ge. The high-purity segmented Ge detectors will be directly submerged and operated in liquid N2 or Ar. The measurement of the half-life time of 0ν2β decay will provide information about the absolute neutrino mass scale and indirectly, the hierarchy. The design goal of GERDA is to reach a sensitivity of 0.2 eV on the effective Majorana neutrino mass (mββ). The GERDA experiment is located in hall A of the Grand Sasso national lab (LNGS) and the construction will start in 2006

  2. A Low Noise 64x64 Germanium Array for Far IR Astronomy Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to develope a 64x64 far infrared germanium focal-plane array with the following key design features: 1- Four top-illuminated, 32x32 germanium sub-arrays...

  3. Performance of a compact multi-crystal high-purity germanium detector array for measuring coincident gamma-ray emissions

    Energy Technology Data Exchange (ETDEWEB)

    Howard, Chris; Daigle, Stephen; Buckner, Matt [University of North Carolina at Chapel Hill, Chapel Hill, NC 27599 (United States); Triangle Universities Nuclear Laboratory, Durham, NC 27708 (United States); Erikson, Luke E.; Runkle, Robert C. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Stave, Sean C., E-mail: Sean.Stave@pnnl.gov [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Champagne, Arthur E.; Cooper, Andrew; Downen, Lori [University of North Carolina at Chapel Hill, Chapel Hill, NC 27599 (United States); Triangle Universities Nuclear Laboratory, Durham, NC 27708 (United States); Glasgow, Brian D. [Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Kelly, Keegan; Sallaska, Anne [University of North Carolina at Chapel Hill, Chapel Hill, NC 27599 (United States); Triangle Universities Nuclear Laboratory, Durham, NC 27708 (United States)

    2015-05-21

    The Multi-sensor Airborne Radiation Survey (MARS) detector is a 14-crystal array of high-purity germanium (HPGe) detectors housed in a single cryostat. The array was used to measure the astrophysical S-factor for the {sup 14}N(p,γ){sup 15}O{sup ⁎} reaction for several transition energies at an effective center-of-mass energy of 163 keV. Owing to the granular nature of the MARS detector, the effect of gamma-ray summing was greatly reduced in comparison to past experiments which utilized large, single-crystal detectors. The new S-factor values agree within their uncertainties with the past measurements. Details of the analysis and detector performance are presented.

  4. A Low Noise 64x64 Germanium Array for Far IR Astronomy Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to investigate the feasibility of developing a 64x64 far infrared germanium focal-plane array with the following key design features: 1- Four...

  5. A Silicon-Germanium Single Chip Receiver for S-band Phased Array Radars

    NARCIS (Netherlands)

    Heij, W. de; Boer, A. de; Hek, A.P. de; Vliet, F.E. van

    2011-01-01

    A Silicon-Germanium single chip receiver has been developed for S-band phased array radars with 2-D digital beamforming. The complete receiver chain from the S-band RF input up to the low-IF output has been integrated on a single SiGe chip. The only external components required to complete the recei

  6. Initial Component Testing for a Germanium Array Cryostat

    Energy Technology Data Exchange (ETDEWEB)

    Keillor, Martin E.; Aalseth, Craig E.; Day, Anthony R.; Fast, James E.; Hoppe, Eric W.; Hyronimus, Brian J.; Hossbach, Todd W.; Seifert, Allen

    2009-06-01

    This report describes progress on the construction of two ultra-low-background cryostats that are part of the NA-22 funded “Radionuclide Laboratories” (RN Labs) project. Each cryostat will house seven high-purity germanium crystals (HPGe). These cryostats are being built from a limited set of materials that are known to have very low levels of radioactive impurities. The RN Labs instrument is designed to take advantage of low background performance, high detection efficiency, and γ-γ coincidence signatures to provide unprecedented gamma spectroscopy sensitivity. The project is focused on improving gamma analysis capabilities for nuclear detonation detection (NDD) applications. The instrument also has the potential for basic nuclear physics research. Section 1 provides the background for the project. Section 2 discusses germanium crystal acceptance testing. Design problems were found after the first delivery of new detectors from the vendor, Canberra Semiconductors. The first four crystals were returned for repair, resulting in a delay in crystal procurement. Section 3 provides an update on copper electroforming. In general, electroforming parts for RN Labs has proceeded smoothly, but there have been recent problems in electroforming three large copper parts necessary for the project. Section 4 describes the first round of testing for the instrument: anti-cosmic scintillator testing, electronics testing, and initial vacuum testing. Section 5 concludes with an overall description of the state of the project and challenges that remain.

  7. Development of silicon-germanium visible-near infrared arrays

    Science.gov (United States)

    Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Haldar, Pradeep; Lewis, Jay S.; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Puri, Yash R.; Sood, Ashok K.

    2016-05-01

    Photodetectors based on germanium which do not require cooling and can provide good near-infrared (NIR) detection performance offer a low-cost alternative to conventional infrared sensors based on material systems such as InGaAs, InSb, and HgCdTe. As a result of the significant difference in thermal expansion coefficients between germanium and silicon, tensile strain incorporated into Ge epitaxial layers deposited on Si utilizing specialized growth processes can extend the operational range of detection to 1600 nm and longer wavelengths. We have fabricated Ge based PIN photodetectors on 300 mm diameter Si wafers to take advantage of high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology. This device fabrication process involves low temperature epitaxial deposition of Ge to form a thin p+ (boron) Ge seed/buffer layer, and subsequent higher temperature deposition of a thicker Ge intrinsic layer. This is followed by selective ion implantation of phosphorus of various concentrations to form n+ Ge regions, deposition of a passivating oxide cap, and then top copper contacts to complete the PIN detector devices. Various techniques including transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have been employed to characterize the material and structural properties of the epitaxially grown layers and fabricated detector devices, and these results are presented. The I-V response of the photodetector devices with and without illumination was also measured, for which the Ge based photodetectors consistently exhibited low dark currents of around ~1 nA at -1 V bias.

  8. The GERmanium Detector Array (Gerda) for the search of neutrinoless ββ decays of 76Ge at LNGS

    International Nuclear Information System (INIS)

    This paper describes the proposed Gerda experiment, the GERmanium Detector Array for the search of neutrinoless ββ decays of 76Ge at LNGS. The goal of the Gerda project is to operate bare germanium diodes enriched in 76Ge in an (optional active) cryogenic fluid shield with a sensitivity for neutrinoless ββ decay of T1/2>2-bar 1026 years after an exposure of 100 kg -bar years

  9. First results of neutrinoless double beta decay search with the GERmanium Detector Array "GERDA"

    Science.gov (United States)

    Janicskó Csáthy, József

    2014-06-01

    The study of neutrinoless double beta decay is the most powerful approach to the fundamental question if the neutrino is a Majorana particle, i.e. its own anti-particle. The observation of the lepton number violating neutrinoless double beta decay would establish the Majorana nature of the neutrino. Until now neutrinoless double beta decay was not observed. The GERmanium Detector Array, GERDA is a double beta decay experiment located at the INFN Gran Sasso National Laboratory, Italy. GERDA operates bare Ge diodes enriched in 76Ge in liquid argon supplemented by a water shield. The exposure accumulated adds up to 21.6 kg· yr with a background level of 1.8 · 10-2 cts/(keV·kg·yr). The results of the Phase I of the experiment are presented and the preparation of the Phase II is briefly discussed.

  10. Segmented Monolithic Germanium Detector Arrays for X-ray Absorption Spectroscopy. Final Report

    International Nuclear Information System (INIS)

    The experimental results from the Phase I effort were extremely encouraging. During Phase I PHDs Co. made the first strides toward a new detector technology that could have great impact on synchrotron x-ray absorption (XAS) measurements, and x-ray detector technology in general. Detector hardware that allowed critical demonstration measurements of our technology was designed and fabricated. This new technology allows good charge collection from many pixels on a single side of a multi-element monolithic germanium planar detector. The detector technology provides 'dot-like' collection electrodes having very low capacitance. The detector technology appears to perform as anticipated in the Phase I proposal. In particular, the 7-pixel detector studied showed remarkable properties; making it an interesting example of detector physics. The technology is enabled by the use of amorphous germanium contact technology on germanium planar detectors. Because of the scalability associated with the fabrication of these technologies at PHDs Co., we anticipate being able to supply larger detector systems at significantly lower cost than systems made in the conventional manner.

  11. Germanium Collimating micro-Channel Arrays For High Resolution, High Energy Confocal X-ray Fluorescence Microscopy

    CERN Document Server

    Agyeman-Budu, David N; Coulthard, Ian; Gordon, Robert; Hallin, Emil; Woll, Arthur R

    2016-01-01

    Confocal x-ray fluorescence microscopy (CXRF) allows direct detection of x-ray fluorescence from a micron-scale 3D volume of an extended, unthinned sample. We have previously demonstrated the use of a novel collection optic, fabricated from silicon, that improves the spatial resolution of this approach by an order of magnitude over CXRF using polycapillaries. The optic, called a collimating channel array (CCA), consists of micron-scale, lithographically-fabricated arrays of collimating channels, all directed towards a single source position. Due to the limited absorbing power of silicon, the useful energy range of these optics was limited to fluorescence emission below about 10 keV. Here, we report fabrication of CCAs from germanium substrates, and demonstrate their practical use for CXRF up to 20 keV. Specifically we demonstrate a nearly energy-independent critical spatial resolution $d_R$ of 2.1$\\pm$0.17 \\um from 2-20 keV, as well as excellent background reduction compared to silicon-based CCAs throughout t...

  12. A 32x32 Direct Hybrid Germanium Photoconductor Array with CTIA Readout Multiplexer Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal introduces an innovative concept aimed to develop, for the first time, a 1k pixel far infrared focal-plane array with the following key design...

  13. A 32x32 Direct Hybrid Germanium Photoconductor Array with CTIA Readout Multiplexer Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to investigate the feasibility of developing a two-dimensional far infrared photoconductor array with the following key design features: 1- A...

  14. Gamma-ray observations of SN 1987A with an array of high-purity germanium detectors

    International Nuclear Information System (INIS)

    A balloon borne gamma-ray spectrometer comprising an array of high-purity n-type germanium (HPGe) detectors having geometric area 119 cm2, resolution 2.5 keV at 1.0 MeV, surrounded by an active NaI (Tl) collimator and Compton suppressing anticoincidence shield nominally 10 cm thick, was flown from Alice Springs, Northern Territory, Australia, on May 29--30, 1987, 96 days after the observed neutrino pulse. The average column depth of residual atmosphere in the direction of SN 1987A at float altitude was 6.3 g cm-2 during the observation. SN 1987A was within the 22-deg full-width-half-maximum (FWHM) field of view for about 3300 s during May 29.9--30.3 UT. No excess gamma rays were observed at energies appropriate to the Ni(56)-Co(56) decay chain or from other lines in the energy region from 0.1 to 3.0 MeV. With 80% of the data analyzed, the 3-sigma upper limit obtained for the 1238-keV line from Co(56) at the instrument resolution (about 3 keV) is 1.3 x 10-3 photons cm-2 s-1

  15. GERDA, a GERmanium Detector Array for the search for neutrinoless ββ decay in 76Ge

    International Nuclear Information System (INIS)

    The GERDA project, searching for neutrinoless double beta-decay of 76Ge with enriched germanium detectors submerged in a cryogenic bath, has been approved for installation at the Gran Sasso National Laboratory (LNGS), Italy. The GERDA technique is aiming at a dramatic reduction of the background due to radioactive contaminations of the materials surrounding the detectors. This will lead to a sensitivity of about 1026 years on the half-life of neutrinoless double beta decay. Already in the first phase of the experiment, GERDA will be able to investigate with high statistical significance the claimed evidence for neutrinoless double beta decay of 76Ge based on the data of the Heidelberg-Moscow experiment

  16. Improved germanium well detectors

    International Nuclear Information System (INIS)

    Germanium well detectors with metal surface barrier contact are comparable for general use with conventional germanium coaxial detectors. They offer very high sensitivity, the highest presently available

  17. Oriented bottom-up growth of armchair graphene nanoribbons on germanium

    Energy Technology Data Exchange (ETDEWEB)

    Arnold, Michael Scott; Jacobberger, Robert Michael

    2016-03-15

    Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.

  18. Neutron Interactions as Seen by A Segmented Germanium Detector

    OpenAIRE

    Abt, I.; A. Caldwell; Kroeninger, K.; Liu, J.; Liu, X.; Majorovits, B.

    2007-01-01

    The GERmanium Detector Array, GERDA, is designed for the search for ``neutrinoless double beta decay'' (0-nu-2-beta) with germanium detectors enriched in Ge76. An 18-fold segmented prototype detector for GERDA Phase II was exposed to an AmBe neutron source to improve the understanding of neutron induced backgrounds. Neutron interactions with the germanium isotopes themselves and in the surrounding materials were studied. Segment information is used to identify neutron induced peaks in the rec...

  19. Germanium and gallium

    International Nuclear Information System (INIS)

    Present article is devoted to germanium and gallium content in fluorite. The literature data on germanium and gallium content was analysed. The literature data on germanium and gallium distribution in fluorite of various geologic deposits and ores of Kazakhstan, Uzbekistan, Tajikistan and some geologic deposits of Russia were studied. The germanium and gallium content in fluorite of geologic deposits of various mineralogical and genetic type was defined.

  20. Germanium detector studies in the framework of the GERDA experiment

    OpenAIRE

    Budjáš, D.

    2009-01-01

    The GERmanium Detector Array (GERDA) is an ultra-low background experiment under construction at Laboratori Nazionali del Gran Sasso. GERDA will search for Ge-76 neutrinoless double beta decay with an aim for 100-fold reduction in background compared to predecessor experiments. This ambition necessitates innovative design approaches, strict selection of low-radioactivity materials, and novel techniques for active background suppression. The core feature of GERDA is its array of germanium dete...

  1. Mineral commodity profiles: Germanium

    Science.gov (United States)

    Butterman, W.C.; Jorgenson, John D.

    2005-01-01

    Overview -- Germanium is a hard, brittle semimetal that first came into use a half-century ago as a semiconductor material in radar units and as the material from which the first transistor was made. Today it is used principally as a component of the glass in telecommunications fiber optics; as a polymerization catalyst for polyethylene terephthalate (PET), a commercially important plastic; in infrared (IR) night vision devices; and as a semiconductor and substrate in electronics circuitry. Most germanium is recovered as a byproduct of zinc smelting, although it also has been recovered at some copper smelters and from the fly ash of coal-burning industrial powerplants. It is a highly dispersed element, associated primarily with base-metal sulfide ores. In the United States, germanium is recovered from zinc smelter residues and manufacturing scrap and is refined by two companies at four germanium refineries. One of the four refineries is dedicated to processing scrap. In 2000, producers sold zone-refined (high-purity) germanium at about $1,250 per kilogram and electronic-grade germanium dioxide (GeO2) at $800 per kilogram. Domestic refined production was valued at $22 million. Germanium is a critical component in highly technical devices and processes. It is likely to remain in demand in the future at levels at least as high as those of 2000. U.S. resources of germanium are probably adequate to meet domestic needs for several decades.

  2. Electrodeposited germanium nanowires.

    Science.gov (United States)

    Mahenderkar, Naveen K; Liu, Ying-Chau; Koza, Jakub A; Switzer, Jay A

    2014-09-23

    Germanium (Ge) is a group IV semiconductor with superior electronic properties compared with silicon, such as larger carrier mobilities and smaller effective masses. It is also a candidate anode material for lithium-ion batteries. Here, a simple, one-step method is introduced to electrodeposit dense arrays of Ge nanowires onto indium tin oxide (ITO) substrates from aqueous solution. The electrochemical reduction of ITO produces In nanoparticles that act as a reduction site for aqueous Ge(IV) species, and as a solvent for the crystallization of Ge nanowires. Nanowires deposited at 95 °C have an average diameter of 100 nm, whereas those deposited at room temperature have an average diameter of 35 nm. Both optical absorption and Raman spectroscopy suggest that the electrodeposited Ge is degenerate. The material has an indirect bandgap of 0.90-0.92 eV, compared with a value of 0.67 eV for bulk, intrinsic Ge. The blue shift is attributed to the Moss-Burstein effect, because the material is a p-type degenerate semiconductor. On the basis of the magnitude of the blue shift, the hole concentration is estimated to be 8 × 10(19) cm(-3). This corresponds to an In impurity concentration of about 0.2 atom %. The resistivity of the wires is estimated to be 4 × 10(-5) Ω·cm. The high conductivity of the wires should make them ideal for lithium-ion battery applications. PMID:25157832

  3. Germanium Detectors in Homeland Security at PNNL

    Energy Technology Data Exchange (ETDEWEB)

    Stave, Sean C.

    2015-05-01

    Neutron and gamma-ray detection is used for non-proliferation and national security applications. While lower energy resolution detectors such as NaI(Tl) have their place, high purity germanium (HPGe) also has a role to play. A detection with HPGe is often a characterization due to the very high energy resolution. However, HPGe crystals remain small and expensive leaving arrays of smaller crystals as an excellent solution. PNNL has developed two similar HPGe arrays for two very different applications. One array, the Multisensor Aerial Radiation Survey (MARS) detector is a fieldable array that has been tested on trucks, boats, and helicopters. The CASCADES HPGe array is an array designed to assay samples in a low background environment. The history of HPGe arrays at PNNL and the development of MARS and CASCADES will be detailed in this paper along with some of the other applications of HPGe at PNNL.

  4. Calibration of a large hyperpure germanium array for in-vivo detection of the actinides with a tissue-equivalent torso phantom

    International Nuclear Information System (INIS)

    For calibration of the array for internally deposited 238Pu, 239Pu, and 241Am, a tissue-equivalent anthropomorphic phantom, was used for efficiency determinations at the ORNL facility. This phantom consists of a tissue-equivalent torso into which is imbedded an adult male skeleton, interchangeable organs containing a homogeneous distribution of various radionuclides, and two sets of chest overlay plates for simulation of progressively thicker tissue over the chest, as well as differing thoracic fat contents

  5. Neutron Interactions as Seen by A Segmented Germanium Detector

    CERN Document Server

    Abt, I; Kroeninger, K; Liu, J; Liu, X; Majorovits, B

    2007-01-01

    The GERmanium Detector Array, GERDA, is designed for the search for ``neutrinoless double beta decay'' (0-nu-2-beta) with germanium detectors enriched in Ge76. An 18-fold segmented prototype detector for GERDA Phase II was exposed to an AmBe neutron source to improve the understanding of neutron induced backgrounds. Neutron interactions with the germanium isotopes themselves and in the surrounding materials were studied. Segment information is used to identify neutron induced peaks in the recorded energy spectra. The Geant4 based simulation package MaGe is used to simulate the experiment. Though many photon peaks from germanium isotopes excited by neutrons are correctly described by Geant4, some physics processes were identified as being incorrectly treated or even missing.

  6. Identification of photons in double beta-decay experiments using segmented germanium detectors - studies with a GERDA Phase II prototype detector

    OpenAIRE

    Abt, I.; Caldwell, A.; Kröninger, K.; Liu, J; X. Liu; Majorovits, B.

    2007-01-01

    The sensitivity of experiments searching for neutrinoless double beta-decay of germanium was so far limited by the background induced by external gamma-radiation. Segmented germanium detectors can be used to identify photons and thus reduce this background component. The GERmanium Detector Array, GERDA, will use highly segmented germanium detectors in its second phase. The identification of photonic events is investigated using a prototype detector. The results are compared with Monte Carlo d...

  7. Calibration of germanium detectors

    International Nuclear Information System (INIS)

    The process of determining the energy-dependent detection probability with measurements using Ge (Li) and high-grade germanium detectors is described. The paper explains which standards are best for a given purpose and given requirements as to accuracy, and how to assess measuring geometry variations and summation corrections. (DG)

  8. Germanium geochemistry and mineralogy

    Science.gov (United States)

    Bernstein, L.R.

    1985-01-01

    Germanium is enriched in the following geologic environments: 1. (1) iron meteorites and terrestrial iron-nickel; 2. (2) sulfide ore deposits, particularly those hosted by sedimentary rocks; 3. (3) iron oxide deposits; 4. (4) oxidized zones of Ge-bearing sulfide deposits; 5. (5) pegmatites, greisens, and skarns; and 6. (6) coal and lignitized wood. In silicate melts, Ge is highly siderophile in the presence of native iron-nickel; otherwise, it is highly lithophile. Among silicate minerals, Ge is concentrated in those having less polymerized silicate tetrahedra such as olivine and topaz. In deposits formed from hydrothermal solutions, Ge tends to be enriched mostly in either sulfides or in fluorine-bearing phases; it is thus concentrated both in some hydrothermal sulfide deposits and in pegmatites, greisens, and skarns. In sulfide deposits that formed from solutions having low to moderate sulfur activity, Ge is concentrated in sphalerite in amounts up to 3000 ppm. Sulfide deposits that formed from solutions having higher sulfur activity allowed Ge to either form its own sulfides, particularly with Cu, or to substitute for As, Sn, or other metals in sulfosalts. The Ge in hydrothermal fluids probably derives from enrichment during the fractional crystallization of igneous fluids, or is due to the incorporation of Ge from the country rocks, particularly from those containing organic material. Germanium bonds to lignin-derivative organic compounds that are found in peat and lignite, accounting for its common concentration in coals and related organic material. Germanium is precipitated from water together with iron hydroxide, accounting for its concentration in some sedimentary and supergene iron oxide deposits. It also is able to substitute for Fe in magnetite in a variety of geologic environments. In the oxidized zone of Ge-bearing sulfide deposits, Ge is concentrated in oxides, hydroxides, and hydroxy-sulfates, sometimes forming its own minerals. It is particularly

  9. Local structure of germanium-sulfur, germanium-selenium, and germanium-tellurium vitreous alloys

    International Nuclear Information System (INIS)

    119Sn and 129Te (129I) Moessbauer spectroscopy showed that chalcogen-enriched Ge100-yXy (X = S, Se, Te) glasses are constructed of structural units including two-coordinated chalcogen atoms in chains such as Ge-X-Ge- and Ge-X-X-Ge-. Germanium in these glasses is only tetravalent and four-coordinated, and only chalcogen atoms are in the local environment of germanium atoms. Chalcogen-depleted glasses are constructed of structural units including two-coordinated (in Ge-X-Ge- chains) and three-coordinated chalcogen atoms (in -Ge-X-Ge- chains). Germanium in these glasses stabilizes in both the tetravalent four-coordinated and divalent three-coordinated states, and only chalcogen atoms are in the local environment of germanium atoms.

  10. Germanium detector studies in the framework of the GERDA experiment

    Energy Technology Data Exchange (ETDEWEB)

    Budjas, Dusan

    2009-05-06

    The GERmanium Detector Array (GERDA) is an ultra-low background experiment under construction at Laboratori Nazionali del Gran Sasso. GERDA will search for {sup 76}Ge neutrinoless double beta decay with an aim for 100-fold reduction in background compared to predecessor experiments. This ambition necessitates innovative design approaches, strict selection of low-radioactivity materials, and novel techniques for active background suppression. The core feature of GERDA is its array of germanium detectors for ionizing radiation, which are enriched in {sup 76}Ge. Germanium detectors are the central theme of this dissertation. The first part describes the implementation, testing, and optimisation of Monte Carlo simulations of germanium spectrometers, intensively involved in the selection of low-radioactivity materials. The simulations are essential for evaluations of the gamma ray measurements. The second part concerns the development and validation of an active background suppression technique based on germanium detector signal shape analysis. This was performed for the first time using a BEGe-type detector, which features a small read-out electrode. As a result of this work, BEGe is now one of the two detector technologies included in research and development for the second phase of the GERDA experiment. A suppression of major GERDA backgrounds is demonstrated, with (0.93{+-}0.08)% survival probability for events from {sup 60}Co, (21{+-}3)% for {sup 226}Ra, and (40{+-}2)% for {sup 228}Th. The acceptance of {sup 228}Th double escape events, which are analogous to double beta decay, was kept at (89{+-}1)%. (orig.)

  11. Pulse shapes and surface effects in segmented germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lenz, Daniel

    2010-03-24

    It is well established that at least two neutrinos are massive. The absolute neutrino mass scale and the neutrino hierarchy are still unknown. In addition, it is not known whether the neutrino is a Dirac or a Majorana particle. The GERmanium Detector Array (GERDA) will be used to search for neutrinoless double beta decay of {sup 76}Ge. The discovery of this decay could help to answer the open questions. In the GERDA experiment, germanium detectors enriched in the isotope {sup 76}Ge are used as source and detector at the same time. The experiment is planned in two phases. In the first, phase existing detectors are deployed. In the second phase, additional detectors will be added. These detectors can be segmented. A low background index around the Q value of the decay is important to maximize the sensitivity of the experiment. This can be achieved through anti-coincidences between segments and through pulse shape analysis. The background index due to radioactive decays in the detector strings and the detectors themselves was estimated, using Monte Carlo simulations for a nominal GERDA Phase II array with 18-fold segmented germanium detectors. A pulse shape simulation package was developed for segmented high-purity germanium detectors. The pulse shape simulation was validated with data taken with an 19-fold segmented high-purity germanium detector. The main part of the detector is 18-fold segmented, 6-fold in the azimuthal angle and 3-fold in the height. A 19th segment of 5mm thickness was created on the top surface of the detector. The detector was characterized and events with energy deposited in the top segment were studied in detail. It was found that the metalization close to the end of the detector is very important with respect to the length of the of the pulses observed. In addition indications for n-type and p-type surface channels were found. (orig.)

  12. Pulse shapes and surface effects in segmented germanium detectors

    International Nuclear Information System (INIS)

    It is well established that at least two neutrinos are massive. The absolute neutrino mass scale and the neutrino hierarchy are still unknown. In addition, it is not known whether the neutrino is a Dirac or a Majorana particle. The GERmanium Detector Array (GERDA) will be used to search for neutrinoless double beta decay of 76Ge. The discovery of this decay could help to answer the open questions. In the GERDA experiment, germanium detectors enriched in the isotope 76Ge are used as source and detector at the same time. The experiment is planned in two phases. In the first, phase existing detectors are deployed. In the second phase, additional detectors will be added. These detectors can be segmented. A low background index around the Q value of the decay is important to maximize the sensitivity of the experiment. This can be achieved through anti-coincidences between segments and through pulse shape analysis. The background index due to radioactive decays in the detector strings and the detectors themselves was estimated, using Monte Carlo simulations for a nominal GERDA Phase II array with 18-fold segmented germanium detectors. A pulse shape simulation package was developed for segmented high-purity germanium detectors. The pulse shape simulation was validated with data taken with an 19-fold segmented high-purity germanium detector. The main part of the detector is 18-fold segmented, 6-fold in the azimuthal angle and 3-fold in the height. A 19th segment of 5mm thickness was created on the top surface of the detector. The detector was characterized and events with energy deposited in the top segment were studied in detail. It was found that the metalization close to the end of the detector is very important with respect to the length of the of the pulses observed. In addition indications for n-type and p-type surface channels were found. (orig.)

  13. Experience from operating germanium detectors in GERDA

    Science.gov (United States)

    Palioselitis, Dimitrios; GERDA Collaboration

    2015-05-01

    Phase I of the Germanium Detector Array (GERDA) experiment, searching for the neutrinoless double beta (0νββ) decay of 76Ge, was completed in September 2013. The most competitive half-life lower limit for the 0νββ decay of 76Ge was set (T-0ν1/2 > 2.1 · 1025 yr at 90% C.L.). GERDA operates bare Ge diodes immersed in liquid argon. During Phase I, mainly refurbished semi-coaxial high purity Ge detectors from previous experiments were used. The experience gained with handling and operating bare Ge diodes in liquid argon, as well as the stability and performance of the detectors during GERDA Phase I are presented. Thirty additional new enriched BEGe-type detectors were produced and will be used in Phase II. A subgroup of these detectors has already been used successfully in GERDA Phase I. The present paper gives an overview of the production chain of the new germanium detectors, the steps taken to minimise the exposure to cosmic radiation during manufacturing, and the first results of characterisation measurements in vacuum cryostats.

  14. Neutron interactions with segmented germanium detectors studies with a GERDA Phase II prototype detector

    International Nuclear Information System (INIS)

    The GERmanium Detector Array, GERDA, is designed to search for ''neutrinoless double beta decay'' (0ν2β) with Germanium detectors enriched in 76Ge. The estimate of neutron induced background relies purely on Geant4 simulations. In order to study neutron interactions with the Germanium itself as well as the surrounding materials, a prototype detector for GERDA Phase II with 18 segments was exposed to an AmBe neutron source. The simulated results from the Geant4-based MaGe MC package agree in general with the measurements, thus verifying the MC used. The Geant4 package is able to simulate most de-excitation photons from the Germanium isotopes and the nuclei recoil process after interacting with neutrons. However, some physics processes are missing in the simulation. (orig.)

  15. Structural, electronic, and linear optical properties of organic photovoltaic PBTTT-C14 crystal

    Science.gov (United States)

    Li, Long-Hua; Kontsevoi, Oleg Y.; Rhim, S. H.; Freeman, Arthur J.

    2013-04-01

    Poly(2,5-bis(3-tetradecylthiophen-2yl)thieno(3,2-b)thiophene) (PBTTT-C14) is an important electro-optical polymer, whose three-dimensional crystal structure is somewhat ambiguous and the fundamental electronic and linear optical properties are not well known. We carried out first-principles calculations to model the crystal structure and to study the effect of side-chains on the physical structure and electronic properties. Our calculations suggest that the patterns of side-chain has little direct effect on the valence band maximum and conduction band minimum but they do have impact on the bandgap through changing the π-π stacking distance. By examining the band structure and wave functions, we conclude that the fundamental bandgap of the PBTTT-C14 crystal is determined by the conduction band energy at the Q point. The calculations indicate that the bandgap of PBTTT-C14 crystal may be tunable by introducing different side-chains. The significant peak in the imaginary part of the dielectric function arises from transitions along the polymer backbone axis, as determined by the critical-point analysis and the large optical transition matrix elements in the direction of the backbone.

  16. The GALATEA test facility and a first study of alpha-induced surface events in a Germanium detector

    OpenAIRE

    Irlbeck, Sabine

    2014-01-01

    Germanium detectors are a choice technology in fundamental research. They are suitable for the search for rare events due to their high sensitivity and excellent energy resolution. As an example, the GERDA (GERmanium Detector Array) experiment searching for neutrinoless double beta decay is described. The observation of this decay would resolve the fundamental question whether the neutrino is its own antiparticle. Especially adapted detector technologies and low background rates n...

  17. Laser synthesis of germanium tin alloys on virtual germanium

    OpenAIRE

    Stefanov, S; Conde, J. C.; Chiussi, S; De Benedetti, A.; Serra, C.; Werner, J.; Oehme, M.; Schulze, J.; Buca, D.; Holländer, B; Mantl, S.

    2012-01-01

    Synthesis of heteroepitaxial germanium tin (GeSn) alloys using excimer laser processing of a thin 4 nm Sn layer on Ge has been demonstrated and studied. Laser induced rapid heating, subsequent melting, and re-solidification processes at extremely high cooling rates have been experimentally achieved and also simulated numerically to optimize the processing parameters. "In situ" measured sample reflectivity with nanosecond time resolution was used as feedback for the simulations and directly co...

  18. Germanium Microsphere High-Q Resonator

    OpenAIRE

    Wang, Pengfei; Lee, Timothy; Ding, Ming; Dhar, Anirban; Hawkins, Thomas; Foy, Paul; Semenova, Yuliya; Wu, Qiang; Sahu, Jayanta; Farrell, Gerald; Ballato, John; Brambilla, Gilberto

    2012-01-01

    In this Letter, the fabrication and characterization of a microsphere resonator from the semiconductor germanium is demonstrated. Whispering gallery modes are excited in a 46 μm diameter germanium microsphere resonator using evanescent coupling from a tapered silica optical fiber with a waist diameter of 2 μm. Resonances with Q factors as high as 3.8×104 at wavelengths near 2 μm are observed. Because of their ultrahigh optical nonlinearities and extremely broad transparency window, germanium ...

  19. Study on the local atomic structure of germanium in organic germanium compounds by EXAFS

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    Organic germanium compounds have been extensively applied in medicine as tonics,In this paper,the local structures of two organic germanium compounds,carboxyethylgermanium sesquioxide and polymeric germanium glutamate,were determined by EXAFS.The structure parameters including coordination numbers and bond lengths were reported,and possible structure patterns were discussed.

  20. Black Germanium fabricated by reactive ion etching

    Science.gov (United States)

    Steglich, Martin; Käsebier, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

    2016-09-01

    A reactive ion etching technique for the preparation of statistical "Black Germanium" antireflection surfaces, relying on self-organization in a Cl2 etch chemistry, is presented. The morphology of the fabricated Black Germanium surfaces is the result of a random lateral distribution of pyramidal etch pits with heights around (1450 ± 150) nm and sidewall angles between 80° and 85°. The pyramids' base edges are oriented along the crystal directions of Germanium, indicating a crystal anisotropy of the etching process. In the Vis-NIR, the tapered Black Germanium surface structure suppresses interface reflection to structure in optoelectronics and IR optics.

  1. Laser synthesis of germanium tin alloys on virtual germanium

    Science.gov (United States)

    Stefanov, S.; Conde, J. C.; Benedetti, A.; Serra, C.; Werner, J.; Oehme, M.; Schulze, J.; Buca, D.; Holländer, B.; Mantl, S.; Chiussi, S.

    2012-03-01

    Synthesis of heteroepitaxial germanium tin (GeSn) alloys using excimer laser processing of a thin 4 nm Sn layer on Ge has been demonstrated and studied. Laser induced rapid heating, subsequent melting, and re-solidification processes at extremely high cooling rates have been experimentally achieved and also simulated numerically to optimize the processing parameters. "In situ" measured sample reflectivity with nanosecond time resolution was used as feedback for the simulations and directly correlated to alloy composition. Detailed characterization of the GeSn alloys after the optimization of the processing conditions indicated substitutional Sn concentration of up to 1% in the Ge matrix.

  2. The MAJORANA DEMONSTRATOR: A Search for Neutrinoless Double-beta Decay of Germanium-76

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, Alexis G.; Aguayo, Estanislao; Avignone, F. T.; Zhang, C.; Back, Henning O.; Barabash, Alexander S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Busch, Matthew; Chan, Yuen-Dat; Christofferson, Cabot-Ann; Collar, J. I.; Combs, Dustin C.; Cooper, R. J.; Detwiler, Jason A.; Leon, Jonathan D.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, S. R.; Esterline, James H.; Fast, James E.; Fields, N.; Finnerty, P.; Fraenkle, Florian; Gehman, Victor M.; Giovanetti, G. K.; Green, M.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Horton, Mark; Howard, Stanley; Howe, Mark; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, M. F.; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; LaFerriere, Brian D.; LaRoque, B. H.; Leviner, L.; Loach, J. C.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Merriman, Jason H.; Miller, M. L.; Mizouni, Leila; Nomachi, Masaharu; Orrell, John L.; Overman, Nicole R.; Phillips, D.; Poon, Alan; Perumpilly, Gopakumar; Prior, Gersende; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Ronquest, M. C.; Shima, T.; Shirchenko, M.; Snavely, Kyle J.; Sobolev, V.; Steele, David; Strain, J.; Thomas, K.; Timkin, V.; Tornow, Werner; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Vorren, Kris R.; Wilkerson, J. F.; Wolfe, B. A.; Yakushev, E.; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir

    2012-09-28

    The observation of neutrinoless double-beta decay would determine whether the neutrino is a Majorana particle and provide information on the absolute scale of neutrino mass. The MAJORANA Collaboration is constructing the DEMONSTRATOR, an array of germanium detectors, to search for neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR will contain 40 kg of germanium; up to 30 kg will be enriched to 86% in 76Ge. The DEMONSTRATOR will be deployed deep underground in an ultra-low-background shielded environment. Operation of the DEMONSTRATOR aims to determine whether a future tonne-scale germanium experiment can achieve a background goal of one count per tonne-year in a 4-keV region of interest around the 76Ge neutrinoless double-beta decay Q-value of 2039 keV.

  3. Functionalization of Mechanochemically Passivated Germanium Nanoparticles via "Click" Chemistry

    Science.gov (United States)

    Purkait, Tapas Kumar

    Germanium nanoparticles (Ge NPs) may be fascinating for their electronic and optoelectronic properties, as the band gap of Ge NPs can be tuned from the infrared into the visible range of solar spectru. Further functionalization of those nanoparticles may potentially lead to numerous applications ranging from surface attachment, bioimaging, drug delivery and nanoparticles based devices. Blue luminescent germanium nanoparticles were synthesized from a novel top-down mechanochemical process using high energy ball milling (HEBM) of bulk germanium. Various reactive organic molecules (such as, alkynes, nitriles, azides) were used in this process to react with fresh surface and passivate the surface through Ge-C or Ge-N bond. Various purification process, such as gel permeation chromatography (GPC), Soxhlet dailysis etc. were introduced to purify nanoparticles from molecular impurities. A size separation technique was developed using GPC. The size separated Ge NPs were characterize by TEM, small angle X-ray scattering (SAXS), UV-vis absorption and photoluminescence (PL) emission spectroscopy to investigate their size selective properties. Germanium nanoparticles with alkyne termini group were prepared by HEBM of germanium with a mixture of n-alkynes and alpha, o-diynes. Additional functionalization of those nanoparticles was achieved by copper(I) catalyzed azide-alkyne "click" reaction. A variety of organic and organometallic azides including biologically important glucals have been reacted in this manner resulting in nanopartilces adorned with ferrocenyl, trimethylsilyl, and glucal groups. Additional functionalization of those nanoparticles was achieved by reactions with various azides via a Cu(I) catalyzed azide-alkyne "click" reaction. Various azides, including PEG derivatives and cylcodextrin moiety, were grafted to the initially formed surface. Globular nanoparticle arrays were formed through interparticle linking via "click" chemistry or "host-guest" chemistry

  4. Interfacial properties of germanium nitride dielectric layers in germanium

    Science.gov (United States)

    Meiners, L. G.

    The first year's effort on this project has been primarily devoted to the design and construction of a low-pressure chemical vapor deposition system for growth of the germanium nitride layers. The gas manifold layout is shown schematically, as is the reactor assembly, and the vacuum pumping assembly. The generator-cavity system is capable of delivering 0-600 W of microwave power at 2.45 GHz. The power generating section has been constructed from components contained in a portable home microwave oven and the cavity was assembled from easily machinable pieces. The cw magnetron source was mounted directly on a cylindrical microwave cavity. The plasma was contained in an on-axis 20-mm o.d. quartz tube. Design tradeoffs and operating information are discussed.

  5. Silicon Germanium Quantum Well Solar Cell Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum-well structures embodied on single crystal silicon germanium drastically enhanced carrier mobilities.  The cell-to-cell circuits of quantum-well PV...

  6. Metal induced crystallization of silicon germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gjukic, M.

    2007-05-15

    In the framework of this thesis the applicability of the aluminium-induced layer exchange on binary silicon germanium alloys was studied. It is here for the first time shown that polycrstalline silicon-germanium layers can be fabricated over the whole composition range by the aluminium-induced layer exchange. The experimental results prove thet the resulting material exhibits a polycrystalline character with typocal grain sizes of 10-100 {mu}m. Raman measurements confirm that the structural properties of the resulting layers are because of the large crystallites more comparable with monocrystalline than with nano- or microcrystalline silicon-germanium. The alloy ratio of the polycrystalline layer correspondes to the chemical composition of the amorphous starting layer. The polycrystalline silicon-germanium layers possess in the range of the interband transitions a reflection spectrum, as it is otherwise only known from monocrystalline reference layers. The improvement of the absorption in the photovoltaically relevant spectral range aimed by the application of silicon-germanium could be also proved by absorption measurments. Strongly correlated with the structural properties of the polycrystalline layers and the electronic band structure resulting from this are beside the optical properties also the electrical properties of the material, especially the charge-carrier mobility and the doping concentration. For binary silicon-germanium layers the hole concentration of about 2 x 10{sup 18} cm{sup -3} for pure silicon increrases to about 5 x 10{sup 20} cm{sub -3} for pure germanium. Temperature-resolved measurements were applied in order to detect doping levels respectively semiconductor-metal transitions. In the last part of the thesis the hydrogen passivation of polycrystalline thin silicon-germanium layers, which were fabricated by means of aluminium-induced layer exchange, is treated.

  7. Sensitive germanium thermistors for cryogenic thermal detector of Tokyo dark matter search programme

    OpenAIRE

    Ootani, Wataru; Ito, Yutaka; Nishigaki, Keiji; Kishimoto, Yasuhiro; Minowa, Makoto; Ootuka, Youiti

    1995-01-01

    Sensitive n-type and p-type germanium thermistors were fabricated by the melt doping technique and by the neutron transmutation doping (NTD) technique, respectively, aiming at a use for the cryogenic thermal detector, or bolometer of Tokyo dark matter search programme. We report on the measurements of the sensitivities of these thermistors. In particular, the p-type thermistors are sensitive enough to scale up our existing prototype LiF bolometer and realize a multiple array of the bolometers...

  8. Recovering germanium from coal ash by chlorination with ammonium chloride

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A new process of enriching germanium from coal ash was developed. The process involves in mixing the coal ash and ammonium chloride and then roasting the mixture to produce germanium chloride that is then absorbed by dilute hydrochloric acid and hydrolyzed to germanium oxide. The germanium recovery reached to 80.2% at the optimum condition: mass ratio of NH4Cl/coal ash is 0.15, roasting temperature 400℃ and roasting time 90 min.

  9. electrocatalytic nitrate reduction on palladium based catalysts activated with germanium

    NARCIS (Netherlands)

    Gootzen, J.F.E.; Lefferts, L.; Veen, van J.A.R.

    1999-01-01

    The electrocatalytic reduction of nitrate has been studied with electrochemical methods on palladium and palladium–platinum electrodes activated with germanium. The formation of a palladium–germanium alloy that occurs at germanium coverage above 0.2 has a strong enhancing effect on the rate of nitra

  10. The GALATEA test facility and a first study of α-induced surface events in a germanium detector

    International Nuclear Information System (INIS)

    Germanium detectors are a choice technology in fundamental research. They are suitable for the search for rare events due to their high sensitivity and excellent energy resolution. As an example, the GERDA (GERmanium Detector Array) experiment searching for neutrinoless double beta decay is described. The observation of this decay would resolve the fundamental question whether the neutrino is its own antiparticle. Especially adapted detector technologies and low background rates needed to detect very rare events such as neutrinoless double beta decays are discussed. The identification of backgrounds originating from the interaction of radiation, especially α-particles, is a focus of this thesis. Low background experiments face problems from α-particles due to unavoidable surface contaminations of the germanium detectors. The segmentation of detectors is used to obtain information about the special characteristics of selected events. The high precision test stand GALATEA was especially designed for surface scans of germanium detectors. As part of this work, GALATEA was completed and commissioned. The final commissioning required major upgrades of the original design which are described in detail. Collimator studies with two commercial germanium detectors are presented. Different collimation levels for a β-source were investigated and crystal axis effects were examined. The first scan with an α-source of the passivated end-plate of a special 19-fold segmented prototype detector mounted in GALATEA is described. The α-induced surface events were studied and characterized. Crosstalk and mirror pulses seen in the segments of the germanium detector were analyzed. The detector studies presented in this thesis will help to further improve the design of germanium detectors for low background experiments.

  11. The GALATEA test facility and a first study of α-induced surface events in a germanium detector

    Energy Technology Data Exchange (ETDEWEB)

    Irlbeck, Sabine

    2014-01-30

    Germanium detectors are a choice technology in fundamental research. They are suitable for the search for rare events due to their high sensitivity and excellent energy resolution. As an example, the GERDA (GERmanium Detector Array) experiment searching for neutrinoless double beta decay is described. The observation of this decay would resolve the fundamental question whether the neutrino is its own antiparticle. Especially adapted detector technologies and low background rates needed to detect very rare events such as neutrinoless double beta decays are discussed. The identification of backgrounds originating from the interaction of radiation, especially α-particles, is a focus of this thesis. Low background experiments face problems from α-particles due to unavoidable surface contaminations of the germanium detectors. The segmentation of detectors is used to obtain information about the special characteristics of selected events. The high precision test stand GALATEA was especially designed for surface scans of germanium detectors. As part of this work, GALATEA was completed and commissioned. The final commissioning required major upgrades of the original design which are described in detail. Collimator studies with two commercial germanium detectors are presented. Different collimation levels for a β-source were investigated and crystal axis effects were examined. The first scan with an α-source of the passivated end-plate of a special 19-fold segmented prototype detector mounted in GALATEA is described. The α-induced surface events were studied and characterized. Crosstalk and mirror pulses seen in the segments of the germanium detector were analyzed. The detector studies presented in this thesis will help to further improve the design of germanium detectors for low background experiments.

  12. Film germanium strain gauges for cryogenic temperatures

    International Nuclear Information System (INIS)

    Strain-measuring characteristics of strain gauges (SG) based on germanium films on gallium arsenide designed for operation in 4-100 K temperature interval and strain range ε∼(±0.3%) are presented. SG are characterized by weak temperature dependences of resistance and strain sensitivity in the temperature range measured. It is shown that in the low-temperature region SG based on heteroepitaxial germanium films on gallium arsenide are no worse than the best domestic and foreign semiconducting and metal SG and are perspective for cryogenic object diagnostics under magnetic field effect

  13. Germanium-overcoated niobium Dayem bridges

    Science.gov (United States)

    Holdeman, L. B.; Peters, P. N.

    1976-01-01

    Overcoating constriction microbridges with semiconducting germanium provides additional thermal conductivity at liquid-helium temperatures to reduce the effects of self-heating in these Josephson junctions. Microwave-induced steps were observed in the I-V characteristics of an overcoated Dayem bridge fabricated in a 15-nm-thick niobium film; at least 20 steps could be counted at 4.2 K. No steps were observed in the I-V characteristics of the bridge prior to overcoating. In addition, the germanium overcoat can protect against electrical disturbances at room temperature.

  14. Neutron-transmutation-doped germanium bolometers

    Science.gov (United States)

    Palaio, N. P.; Rodder, M.; Haller, E. E.; Kreysa, E.

    1983-01-01

    Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

  15. Germanium-Based Nanomaterials for Rechargeable Batteries.

    Science.gov (United States)

    Wu, Songping; Han, Cuiping; Iocozzia, James; Lu, Mingjia; Ge, Rongyun; Xu, Rui; Lin, Zhiqun

    2016-07-01

    Germanium-based nanomaterials have emerged as important candidates for next-generation energy-storage devices owing to their unique chemical and physical properties. In this Review, we provide a review of the current state-of-the-art in germanium-based materials design, synthesis, processing, and application in battery technology. The most recent advances in the area of Ge-based nanocomposite electrode materials and electrolytes for solid-state batteries are summarized. The limitations of Ge-based materials for energy-storage applications are discussed, and potential research directions are also presented with an emphasis on commercial products and theoretical investigations. PMID:27281435

  16. Research and Development Supporting a Next Generation Germanium Double Beta Decay Experiment

    Science.gov (United States)

    Rielage, Keith; Elliott, Steve; Chu, Pinghan; Goett, Johnny; Massarczyk, Ralph; Xu, Wenqin

    2015-10-01

    To improve the search for neutrinoless double beta decay, the next-generation experiments will increase in source mass and continue to reduce backgrounds in the region of interest. A promising technology for the next generation experiment is large arrays of Germanium p-type point contact detectors enriched in 76-Ge. The experience, expertise and lessons learned from the MAJORANA DEMONSTRATOR and GERDA experiments naturally lead to a number of research and development activities that will be useful in guiding a future experiment utilizing Germanium. We will discuss some R&D activities including a hybrid cryostat design, background reduction in cabling, connectors and electronics, and modifications to reduce assembly time. We acknowledge the support of the U.S. Department of Energy through the LANL/LDRD Program.

  17. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  18. Electron tunnelling into amorphous germanium and silicon.

    Science.gov (United States)

    Smith, C. W.; Clark, A. H.

    1972-01-01

    Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

  19. Method for copper staining of germanium crystals

    Science.gov (United States)

    Rivet, E. J.

    1969-01-01

    Proper conditions for copper staining of germanium crystals include a low solution temperature of 3 degrees C, illumination of the sample by infrared light, and careful positioning of the light source relative to the sample so as to minimize absorption of the infrared light.

  20. Interstitial oxygen in germanium and silicon

    Energy Technology Data Exchange (ETDEWEB)

    Artacho, E.; Yndurain, F. [Instituto Nicolas Cabrera and Departamento de Fisica de la Materia Condensada, C-III Universidad Autonoma de Madrid, 28049 Madrid (Spain); Pajot, B. [Groupe de Physique des Solides (Unite Associee au CNRS), Tour 23, Universite Denis Diderot, 2 Place Jussieu, 75251 Paris Cedex 05 (France); Ramirez, R.; Herrero, C.P. [Instituto de Ciencia de Materiales, Consejo Superior de Investigaciones Cientificas, Cantoblanco, 28049 Madrid (Spain); Khirunenko, L.I. [Institute of Physics, National Academy of Sciences of Ukraine, Prospect Nauki 46, 252650 Kiev 22 (Ukraine); Itoh, K.M. [Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223 (Japan); Haller, E.E. [Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720 (United States)

    1997-08-01

    The microscopic structure of interstitial oxygen in germanium and its associated dynamics are studied both experimentally and theoretically. The infrared absorption spectrum is calculated with a dynamical matrix model based on first-principles total-energy calculations describing the potential energy for the nuclear motions. Spectral features and isotope shifts are calculated and compared with available experimental results. From new spectroscopic data on natural and on quasimonoisotopic germanium samples, new isotope shifts have been obtained and compared with the theoretical predictions. The low-energy spectrum is analyzed in terms of a hindered rotor model. A fair understanding of the center is achieved, which is then compared with interstitial oxygen in silicon. The oxygen atom is nontrivially quantum delocalized both in silicon and in germanium, but the physics is shown to be very different: while the Si-O-Si quasimolecule is essentially linear, the Ge-O-Ge structure is puckered. The delocalization in a highly anharmonic potential well of oxygen in silicon is addressed using path-integral Monte Carlo simulations, for comparison with the oxygen rotation in germanium. The understanding achieved with this new information allows us to explain the striking differences between both systems, in both the infrared and the far-infrared spectral regions, and the prediction of the existence of hidden vibrational modes, never directly observed experimentally, but soundly supported by the isotope-shift analysis. {copyright} {ital 1997} {ital The American Physical Society}

  1. Interstitial oxygen in germanium and silicon

    Science.gov (United States)

    Artacho, Emilio; Ynduráin, Félix; Pajot, Bernard; Ramírez, Rafael; Herrero, Carlos P.; Khirunenko, Ludmila I.; Itoh, Kohei M.; Haller, Eugene E.

    1997-08-01

    The microscopic structure of interstitial oxygen in germanium and its associated dynamics are studied both experimentally and theoretically. The infrared absorption spectrum is calculated with a dynamical matrix model based on first-principles total-energy calculations describing the potential energy for the nuclear motions. Spectral features and isotope shifts are calculated and compared with available experimental results. From new spectroscopic data on natural and on quasimonoisotopic germanium samples, new isotope shifts have been obtained and compared with the theoretical predictions. The low-energy spectrum is analyzed in terms of a hindered rotor model. A fair understanding of the center is achieved, which is then compared with interstitial oxygen in silicon. The oxygen atom is nontrivially quantum delocalized both in silicon and in germanium, but the physics is shown to be very different: while the Si-O-Si quasimolecule is essentially linear, the Ge-O-Ge structure is puckered. The delocalization in a highly anharmonic potential well of oxygen in silicon is addressed using path-integral Monte Carlo simulations, for comparison with the oxygen rotation in germanium. The understanding achieved with this new information allows us to explain the striking differences between both systems, in both the infrared and the far-infrared spectral regions, and the prediction of the existence of hidden vibrational modes, never directly observed experimentally, but soundly supported by the isotope-shift analysis.

  2. gamma-ray tracking in germanium the backtracking method

    CERN Document Server

    Marel, J V D

    2002-01-01

    In the framework of a European TMR network project the concept for a gamma-ray tracking array is being developed for nuclear physics spectroscopy in the energy range of approx 10 keV up to several MeV. The tracking array will consist of a large number of position-sensitive germanium detectors in a spherical geometry around a target. Due to the high segmentation, a Compton scattered gamma-ray will deposit energy in several different segments. A method has been developed to reconstruct the tracks of multiple coincident gamma-rays and to find their initial energies. By starting from the final point the track can be reconstructed backwards to the origin with the help of the photoelectric and Compton cross-sections and the Compton scatter formula. Every reconstructed track is given a figure of merit, thus allowing suppression of wrongly reconstructed tracks and gamma-rays that have scattered out of the detector system. This so-called backtracking method has been tested on simulated events in a shell-like geometry ...

  3. Spin transport in p-type germanium.

    Science.gov (United States)

    Rortais, F; Oyarzún, S; Bottegoni, F; Rojas-Sánchez, J-C; Laczkowski, P; Ferrari, A; Vergnaud, C; Ducruet, C; Beigné, C; Reyren, N; Marty, A; Attané, J-P; Vila, L; Gambarelli, S; Widiez, J; Ciccacci, F; Jaffrès, H; George, J-M; Jamet, M

    2016-04-27

    We report on the spin transport properties in p-doped germanium (Ge-p) using low temperature magnetoresistance measurements, electrical spin injection from a ferromagnetic metal and the spin pumping-inverse spin Hall effect method. Electrical spin injection is carried out using three-terminal measurements and the Hanle effect. In the 2-20 K temperature range, weak antilocalization and the Hanle effect provide the same spin lifetime in the germanium valence band (≈1 ps) in agreement with predicted values and previous optical measurements. These results, combined with dynamical spin injection by spin pumping and the inverse spin Hall effect, demonstrate successful spin accumulation in Ge. We also estimate the spin Hall angle θ(SHE) in Ge-p (6-7 x 10(-4) at room temperature, pointing out the essential role of ionized impurities in spin dependent scattering.

  4. Vacancy-indium clusters in implanted germanium

    KAUST Repository

    Chroneos, Alexander I.

    2010-04-01

    Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

  5. Limits on Light WIMPs with a Germanium Detector at 172 eVee threshold at the China Jinping Underground Laboratory

    CERN Document Server

    Liu, S K; Kang, K J; Cheng, J P; Wong, H T; Li, Y J; Lin, S T; Chang, J P; Chen, N; Chen, Q H; Chen, Y H; Chuang, Y C; Deng, Z; Du, Q; Gong, H; Hao, X Q; He, H J; He, Q J; Huang, H X; Huang, T R; Jiang, H; Li, H B; Li, J M; Li, J; Li, X; Li, X Q; Li, X Y; Li, Y L; Liao, H Y; Lin, F K; Lü, L C; Ma, H; Mao, S J; Qin, J Q; Ren, J; Ruan, X C; Shen, M B; Singh, L; Singh, M K; Soma, A K; Su, J; Tang, C J; Tseng, C H; Wang, J M; Wang, L; Wang, Q; Wu, S Y; Wu, Y C; Xianyu, Z Z; Xiao, R Q; Xing, H Y; Xu, F Z; Xu, Y; Xu, X J; Xue, T; Yang, C W; Yang, L T; Yang, S W; Yi, N; Yu, C X; Yu, H; Yu, X Z; Zeng, X H; Zeng, Z; Zhang, L; Zhang, Y H; Zhao, M G; Zhao, W; Zhou, Z Y; Zhu, J J; Zhu, W B; Zhu, X Z; Zhu, Z H

    2014-01-01

    The China Dark Matter Experiment reports results on light WIMP dark matter searches at the China Jinping Underground Laboratory with a germanium detector array with a total mass of 20 g. The physics threshold achieved is 172 eVee at 50% signal efficiency. With 0.784 kg-days of data, exclusion region on spin-independent coupling with the nucleon is derived, improving over our earlier bounds at WIMP mass less than 4.6 GeV.

  6. Development of segmented germanium detectors for neutrinoless double beta decay experiments

    International Nuclear Information System (INIS)

    The results from neutrino oscillation experiments indicate that at least two neutrinos have mass. However, the value of the masses and whether neutrinos and anti-neutrinos are identical, i.e., Majorana particles, remain unknown. Neutrinoless double beta decay experiments can help to improve our understanding in both cases and are the only method currently possible to tackle the second question. The GERmanium Detector Array (GERDA) experiment, which will search for the neutrinoless double beta decay of 76Ge, is currently under construction in Hall A of the INFN Gran Sasso National Laboratory (LNGS), Italy. In order to achieve an extremely low background level, segmented germanium detectors are considered to be operated directly in liquid argon which serves simultaneously as cooling and shielding medium. Several test cryostats were built at the Max-Planck-Institut fuer Physik in Muenchen to operate segmented germanium detectors both in vacuum and submerged in cryogenic liquid. The performance and the background discrimination power of segmented germanium detectors were studied in detail. It was proven for the first time that segmented germanium detectors can be operated stably over long periods submerged in a cryogenic liquid. It was confirmed that the segmentation scheme employed does well in the identification of photon induced background and demonstrated for the first time that also neutron interactions can be identified. The C++ Monte Carlo framework, MaGe (Majorana-GERDA), is a joint development of the Majorana and GERDA collaborations. It is based on GEANT4, but tailored especially to simulate the response of ultra-low background detectors to ionizing radiation. The predictions of the simulation were veri ed to be accurate for a wide range of conditions. Some shortcomings were found and corrected. Pulse shape analysis is complementary to segmentation in identifying background events. Its efficiency can only be correctly determined using reliable pulse shape

  7. Development of segmented germanium detectors for neutrinoless double beta decay experiments

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jing

    2009-06-09

    The results from neutrino oscillation experiments indicate that at least two neutrinos have mass. However, the value of the masses and whether neutrinos and anti-neutrinos are identical, i.e., Majorana particles, remain unknown. Neutrinoless double beta decay experiments can help to improve our understanding in both cases and are the only method currently possible to tackle the second question. The GERmanium Detector Array (GERDA) experiment, which will search for the neutrinoless double beta decay of {sup 76}Ge, is currently under construction in Hall A of the INFN Gran Sasso National Laboratory (LNGS), Italy. In order to achieve an extremely low background level, segmented germanium detectors are considered to be operated directly in liquid argon which serves simultaneously as cooling and shielding medium. Several test cryostats were built at the Max-Planck-Institut fuer Physik in Muenchen to operate segmented germanium detectors both in vacuum and submerged in cryogenic liquid. The performance and the background discrimination power of segmented germanium detectors were studied in detail. It was proven for the first time that segmented germanium detectors can be operated stably over long periods submerged in a cryogenic liquid. It was confirmed that the segmentation scheme employed does well in the identification of photon induced background and demonstrated for the first time that also neutron interactions can be identified. The C++ Monte Carlo framework, MaGe (Majorana-GERDA), is a joint development of the Majorana and GERDA collaborations. It is based on GEANT4, but tailored especially to simulate the response of ultra-low background detectors to ionizing radiation. The predictions of the simulation were veri ed to be accurate for a wide range of conditions. Some shortcomings were found and corrected. Pulse shape analysis is complementary to segmentation in identifying background events. Its efficiency can only be correctly determined using reliable pulse

  8. Next Generation Germanium Systems for Safeguards Applications

    International Nuclear Information System (INIS)

    We are developing the latest generation of highly portable, mechanically cooled germanium systems for safeguard applications. In collaboration with our industrial partner, Ph.D.s Co, we have developed the Germanium Gamma Ray Imager (GeGI), an imager with a 2π field of view. This instrument has been thoroughly field tested in a wide range of environments and have performed reliably even in the harshest conditions. The imaging capability of GeGI complements existing safeguards techniques by allowing for the spatial detection, identification, and characterization of nuclear material. Additionally, imaging can be used in design information verification activities to address potential material diversions. Measurements conducted at the Paducah Gaseous Diffusion Plant highlight the advantages this instrument offers in the identification and localization of LEU, HEU and Pu holdup. GeGI has also been deployed to the Savannah River Site for the measurement of radioactive waste canisters, providing information valuable for waste characterization and inventory accountancy. Measuring 30 x 15 x 23 cm and weighing approximately 15 kg, this instrument is the first portable germanium-based imager. GeGI offers high reliability with the convenience of mechanical cooling, making this instrument ideal for the next generation of safeguards instrumentation. (author)

  9. Performance of bare high-purity germanium detectors in liquid argon for the GERDA experiment

    CERN Document Server

    Heider, Marik Barnabé; Chkvorets, Oleg; Di Vacri, Assunta; Gusev, Konstantin; Schönert, Stefan; Shirchenko, Mark

    2008-01-01

    The GERmanium Detector Array, GERDA, will search for neutrinoless double beta decay in 76Ge at the National Gran Sasso Laboratory of the INFN. Bare high-purity germanium detectors enriched in 76Ge will be submerged in liquid argon serving simultaneously as a shield against external radioactivity and as a cooling medium. In GERDA Phase-I, reprocessed enriched-Ge detectors, which were previously operated by the Heidelberg-Moscow and IGEX collaborations, will be redeployed. Before operating the enriched detectors, tests are performed with non-enriched bare HPGe detectors in the GERDA underground Detector Laboratory to test the Phase-I detector assembly, the detector handling protocols, the refurbishment technology and to study the long-term stability in liquid argon. The leakage currents in liquid argon and liquid nitrogen have been extensively studied under varying gamma irradiation conditions. In total three non-enriched high-purity p-type prototype germanium detectors have been operated successfully. The dete...

  10. Smooth germanium nanowires prepared by a hydrothermal deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Pei, L.Z., E-mail: lzpei1977@163.com [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhao, H.S. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Tan, W. [Henkel Huawei Electronics Co. Ltd., Lian' yungang, Jiangsu 222006 (China); Yu, H.Y. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Chen, Y.W. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Fan, C.G. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhang, Qian-Feng, E-mail: zhangqf@ahut.edu.cn [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China)

    2009-11-15

    Smooth germanium nanowires were prepared using Ge and GeO{sub 2} as the starting materials and Cu sheet as the substrate by a simple hydrothermal deposition process. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations show that the germanium nanowires are smooth and straight with uniform diameter of about 150 nm in average and tens of micrometers in length. X-ray diffraction (XRD) and Raman spectrum of the germanium nanowires display that the germanium nanowires are mainly composed of cubic diamond phase. PL spectrum shows a strong blue light emission at 441 nm. The growth mechanism is also discussed.

  11. Separation of radioarsenic from a germanium dioxide target

    International Nuclear Information System (INIS)

    A procedure for the separation and recovery of arsenic radionuclides from a germanium oxide target using a liquid-liquid extraction technique is described. The effects of target material and preparation were investigated. The effects of hydrochloric acid and hydrogen peroxide concentration on germanium recovery were determined. The efficacy of various reducing agents were evaluated for recovery of arsenic. In addition, the effects of hydrochloric acid and reducing agent concentration were evaluated for optimum arsenic extraction conditions. The germanium oxide target material was recovered in greater than 99% radiochemical yield with less than 1% crossover contamination of germanium radionuclides. (author)

  12. AGATA - Advanced Gamma Tracking Array

    CERN Document Server

    Akkoyun, S; Alikhani, B; Ameil, F; de Angelis, G; Arnold, L; Astier, A; Ataç, A; Aubert, Y; Aufranc, C; Austin, A; Aydin, S; Azaiez, F; Badoer, S; Balabanski, D L; Barrientos, D; Baulieu, G; Baumann, R; Bazzacco, D; Beck, F A; Beck, T; Bednarczyk, P; Bellato, M; Bentley, M A; Benzoni, G; Berthier, R; Berti, L; Beunard, R; Bianco, G Lo; Birkenbach, B; Bizzeti, P G; Bizzeti-Sona, A M; Blanc, F Le; Blasco, J M; Blasi, N; Bloor, D; Boiano, C; Borsato, M; Bortolato, D; Boston, A J; Boston, H C; Bourgault, P; Boutachkov, P; Bouty, A; Bracco, A; Brambilla, S; Brawn, I P; Brondi, A; Broussard, S; Bruyneel, B; Bucurescu, D; Burrows, I; Bürger, A; Cabaret, S; Cahan, B; Calore, E; Camera, F; Capsoni, A; Carrió, F; Casati, G; Castoldi, M; Cederwall, B; Cercus, J -L; Chambert, V; Chambit, M El; Chapman, R; Charles, L; Chavas, J; Clément, E; Cocconi, P; Coelli, S; Coleman-Smith, P J; Colombo, A; Colosimo, S; Commeaux, C; Conventi, D; Cooper, R J; Corsi, A; Cortesi, A; Costa, L; Crespi, F C L; Cresswell, J R; Cullen, D M; Curien, D; Czermak, A; Delbourg, D; Depalo, R; Descombes, T; Désesquelles, P; Detistov, P; Diarra, C; Didierjean, F; Dimmock, M R; Doan, Q T; Domingo-Pardo, C; Doncel, M; Dorangeville, F; Dosme, N; Drouen, Y; Duchêne, G; Dulny, B; Eberth, J; Edelbruck, P; Egea, J; Engert, T; Erduran, M N; Ertürk, S; Fanin, C; Fantinel, S; Farnea, E; Faul, T; Filliger, M; Filmer, F; Finck, Ch; de France, G; Gadea, A; Gast, W; Geraci, A; Gerl, J; Gernhäuser, R; Giannatiempo, A; Giaz, A; Gibelin, L; Givechev, A; Goel, N; González, V; Gottardo, A; Grave, X; Grȩbosz, J; Griffiths, R; Grint, A N; Gros, P; Guevara, L; Gulmini, M; Görgen, A; Ha, H T M; Habermann, T; Harkness, L J; Harroch, H; Hauschild, K; He, C; Hernández-Prieto, A; Hervieu, B; Hess, H; Hüyük, T; Ince, E; Isocrate, R; Jaworski, G; Johnson, A; Jolie, J; Jones, P; Jonson, B; Joshi, P; Judson, D S; Jungclaus, A; Kaci, M; Karkour, N; Karolak, M; Kaşkaş, A; Kebbiri, M; Kempley, R S; Khaplanov, A; Klupp, S; Kogimtzis, M; Kojouharov, I; Korichi, A; Korten, W; Kröll, Th; Krücken, R; Kurz, N; Ky, B Y; Labiche, M; Lafay, X; Lavergne, L; Lazarus, I H; Leboutelier, S; Lefebvre, F; Legay, E; Legeard, L; Lelli, F; Lenzi, S M; Leoni, S; Lermitage, A; Lersch, D; Leske, J; Letts, S C; Lhenoret, S; Lieder, R M; Linget, D; Ljungvall, J; Lopez-Martens, A; Lotodé, A; Lunardi, S; Maj, A; van der Marel, J; Mariette, Y; Marginean, N; Marginean, R; Maron, G; Mather, A R; Mȩczyński, W; Mendéz, V; Medina, P; Melon, B; Menegazzo, R; Mengoni, D; Merchan, E; Mihailescu, L; Michelagnoli, C; Mierzejewski, J; Milechina, L; Million, B; Mitev, K; Molini, P; Montanari, D; Moon, S; Morbiducci, F; Moro, R; Morrall, P S; Möller, O; Nannini, A; Napoli, D R; Nelson, L; Nespolo, M; Ngo, V L; Nicoletto, M; Nicolini, R; Noa, Y Le; Nolan, P J; Norman, M; Nyberg, J; Obertelli, A; Olariu, A; Orlandi, R; Oxley, D C; Özben, C; Ozille, M; Oziol, C; Pachoud, E; Palacz, M; Palin, J; Pancin, J; Parisel, C; Pariset, P; Pascovici, G; Peghin, R; Pellegri, L; Perego, A; Perrier, S; Petcu, M; Petkov, P; Petrache, C; Pierre, E; Pietralla, N; Pietri, S; Pignanelli, M; Piqueras, I; Podolyak, Z; Pouhalec, P Le; Pouthas, J; Pugnére, D; Pucknell, V F E; Pullia, A; Quintana, B; Raine, R; Rainovski, G; Ramina, L; Rampazzo, G; La Rana, G; Rebeschini, M; Recchia, F; Redon, N; Reese, M; Reiter, P; Regan, P H; Riboldi, S; Richer, M; Rigato, M; Rigby, S; Ripamonti, G; Robinson, A P; Robin, J; Roccaz, J; Ropert, J -A; Rossé, B; Alvarez, C Rossi; Rosso, D; Rubio, B; Rudolph, D; Saillant, F; Şahin, E; Salomon, F; Salsac, M -D; Salt, J; Salvato, G; Sampson, J; Sanchis, E; Santos, C; Schaffner, H; Schlarb, M; Scraggs, D P; Seddon, D; Şenyiğit, M; Sigward, M -H; Simpson, G; Simpson, J; Slee, M; Smith, J F; Sona, P; Sowicki, B; Spolaore, P; Stahl, C; Stanios, T; Stefanova, E; Stézowski, O; Strachan, J; Suliman, G; Söderström, P -A; Tain, J L; Tanguy, S; Tashenov, S; Theisen, Ch; Thornhill, J; Tomasi, F; Toniolo, N; Touzery, R; Travers, B; Triossi, A; Tripon, M; Tun-Lanoë, K M M; Turcato, M; Unsworth, C; Ur, C A; Valiente-Dobon, J J; Vandone, V; Vardaci, E; Venturelli, R; Veronese, F; Veyssiere, Ch; Viscione, E; Wadsworth, R; Walker, P M; Warr, N; Weber, C; Weisshaar, D; Wells, D; Wieland, O; Wiens, A; Wittwer, G; Wollersheim, H J; Zocca, F; Zamfir, N V; Ziȩbliński, M; Zucchiatti, A

    2011-01-01

    The Advanced GAmma Tracking Array (AGATA) is a European project to develop and operate the next generation gamma-ray spectrometer. AGATA is based on the technique of gamma-ray energy tracking in electrically segmented high-purity germanium crystals. This technique requires the accurate determination of the energy, time and position of every interaction as a gamma ray deposits its energy within the detector volume. Reconstruction of the full interaction path results in a detector with very high efficiency and excellent spectral response. The realization of gamma-ray tracking and AGATA is a result of many technical advances. These include the development of encapsulated highly-segmented germanium detectors assembled in a triple cluster detector cryostat, an electronics system with fast digital sampling and a data acquisition system to process the data at a high rate. The full characterization of the crystals was measured and compared with detector-response simulations. This enabled pulse-shape analysis algorith...

  13. Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared.

    Science.gov (United States)

    Fischer, Marco P; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

    2016-07-22

    Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.

  14. Optical Activation of Germanium Plasmonic Antennas in the Mid-Infrared.

    Science.gov (United States)

    Fischer, Marco P; Schmidt, Christian; Sakat, Emilie; Stock, Johannes; Samarelli, Antonio; Frigerio, Jacopo; Ortolani, Michele; Paul, Douglas J; Isella, Giovanni; Leitenstorfer, Alfred; Biagioni, Paolo; Brida, Daniele

    2016-07-22

    Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination redshifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas. PMID:27494498

  15. Germanium: From Its Discovery to SiGe Devices

    Energy Technology Data Exchange (ETDEWEB)

    Haller, E.E.

    2006-06-14

    Germanium, element No.32, was discovered in 1886 by Clemens Winkler. Its first broad application was in the form of point contact Schottky diodes for radar reception during WWII. The addition of a closely spaced second contact led to the first all-solid-state electronic amplifier device, the transistor. The relatively low bandgap, the lack of a stable oxide and large surface state densities relegated germanium to the number 2 position behind silicon. The discovery of the lithium drift process, which made possible the formation of p-i-n diodes with fully depletable i-regions several centimeters thick, led germanium to new prominence as the premier gamma-ray detector. The development of ultra-pure germanium yielded highly stable detectors which have remained unsurpassed in their performance. New acceptors and donors were discovered and the electrically active role of hydrogen was clearly established several years before similar findings in silicon. Lightly doped germanium has found applications as far infrared detectors and heavily Neutron Transmutation Doped (NTD) germanium is used in thermistor devices operating at a few milliKelvin. Recently germanium has been rediscovered by the silicon device community because of its superior electron and hole mobility and its ability to induce strains when alloyed with silicon. Germanium is again a mainstream electronic material.

  16. Ultraviolet-light-induced processes in germanium-doped silica

    DEFF Research Database (Denmark)

    Kristensen, Martin

    2001-01-01

    A model is presented for the interaction of ultraviolet (UV) light with germanium-doped silica glass. It is assumed that germanium sites work as gates for transferring the excitation energy into the silica. In the material the excitation induces forbidden transitions to two different defect states...

  17. Radiation piezoelectric effect in germanium single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kikoin, I.K.; Kikoin, L.I.; Lazarev, S.D.

    1977-06-01

    Irradiation with ionizing particles of a germanium single crystal and uniaxial deformation at right-angles to the particle beam produced an electric field and a corresponding emf due to the radiation piezoelectric effect. Measurements were carried out when such a single crystal was irradiated with ..cap alpha.. particles and protons. The piezoelectric emf increased linearly with the compressive stress and the ..cap alpha..-particle flux intensity. The emf depended weakly on the particle energy. The observed effect was due to the anisotropy resulting from uniaxial deformation.

  18. Tensile strain mapping in flat germanium membranes

    Energy Technology Data Exchange (ETDEWEB)

    Rhead, S. D., E-mail: S.Rhead@warwick.ac.uk; Halpin, J. E.; Myronov, M.; Patchett, D. H.; Allred, P. S.; Wilson, N. R.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom); Shah, V. A. [Department of Physics, University of Warwick, Coventry, CV4 7AL (United Kingdom); Department of Engineering, University of Warwick, Coventry, CV4 7AL (United Kingdom); Kachkanov, V.; Dolbnya, I. P. [Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire, OX11 0DE (United Kingdom); Reparaz, J. S. [ICN2 - Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Sotomayor Torres, C. M. [ICN2 - Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

    2014-04-28

    Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal space maps were obtained with ∼4 μm spatial resolution, from which detailed information on the strain distribution, thickness, and crystalline tilt of the membrane was obtained. We are able to detect a systematic strain variation across the membranes, but show that this is negligible in the context of using the membranes as platforms for further growth. In addition, we show evidence that the interface and surface quality is improved by suspending the Ge.

  19. Tensile strain mapping in flat germanium membranes

    International Nuclear Information System (INIS)

    Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal space maps were obtained with ∼4 μm spatial resolution, from which detailed information on the strain distribution, thickness, and crystalline tilt of the membrane was obtained. We are able to detect a systematic strain variation across the membranes, but show that this is negligible in the context of using the membranes as platforms for further growth. In addition, we show evidence that the interface and surface quality is improved by suspending the Ge

  20. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  1. Silicon/Germanium Molecular Beam Epitaxy

    OpenAIRE

    Ericsson, Leif

    2006-01-01

    Molecular Beam Epitaxy (MBE) is a well-established method to grow low-dimensional structures for research applications. MBE has given many contributions to the rapid expanding research-area of nano-technology and will probably continuing doing so. The MBE equipment, dedicated for Silicon/Germanium (Si/Ge) systems, at Karlstads University (Kau) has been studied and started for the first time. In the work of starting the system, all the built in interlocks has been surveyed and connected, and t...

  2. Yunnan Chihong Zinc & Germanium Co.,Ltd.Invested RMB 300 Million for Germanium Project with Output 30 Tons/Year

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    <正>Recently,Yunnan Chihong Zinc & Germanium Co.,Ltd.,an A-share listed company held by Yunnan Metallurgical Group Co.,Ltd.,kicked off its construction of a project for comprehen- sive utilization of lead-zinc associated metal germanium resources to be output at 30 tons/year.It is introduced that the investment

  3. Effects of Germanium on Movement of Dislocations in p-Type Czochralski Silicon

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon was investigated. Experimental results show that the dislocations in germanium-doped Czochralski silicon move shorter and slower than those in Czochralski silicon undoping with germanium when the concentration of germanium is over 1×1018 cm-3. The retarding velocity of dislocations is contributed to the dislocations pinning effect of the strain field introduced by the high concentration germanium, and the Ge4B cluster and the oxygen precipitation those are preferred to form at higher concentration germanium.

  4. High-purity germanium crystal growing

    International Nuclear Information System (INIS)

    The germanium crystals used for the fabrication of nuclear radiation detectors are required to have a purity and crystalline perfection which is unsurpassed by any other solid material. These crystals should not have a net electrically active impurity concentration greater than 1010cm-3 and be essentially free of charge trapping defects. Such perfect crystals of germanium can be grown only because of the highly favorable chemical and physical properties of this element. However, ten years of laboratory scale and commercial experience has still not made the production of such crystals routine. The origin and control of many impurities and electrically active defect complexes is now fairly well understood but regular production is often interrupted for long periods due to the difficulty of achieving the required high purity or to charge trapping in detectors made from crystals seemingly grown under the required conditions. The compromises involved in the selection of zone refining and crystal grower parts and ambients is discussed and the difficulty in controlling the purity of key elements in the process is emphasized. The consequences of growing in a hydrogen ambient are discussed in detail and it is shown how complexes of neutral defects produce electrically active centers

  5. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  6. Temperature-dependant study of phosphorus ion implantation in germanium

    Science.gov (United States)

    Razali, M. A.; Smith, A. J.; Jeynes, C.; Gwilliam, R. M.

    2012-11-01

    We present experimental results on shallow junction formation in germanium by phosphorus ion implantation and standard rapid thermal processing. An attempt is made to improve phosphorus activation by implanting phosphorus at high and low temperature. The focus is on studying the germanium damage and phosphorus activation as a function of implant temperature. Rutherford backscattering spectrometry with channelling and Hall Effect measurements are employed for characterisation of germanium damage and phosphorus activation, respectively. High and low temperature implants were found to be better compared to room temperature implant.

  7. Oxygen defect processes in silicon and silicon germanium

    International Nuclear Information System (INIS)

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies

  8. Electronic states of germanium grown under micro-gravity condition

    Energy Technology Data Exchange (ETDEWEB)

    Sugahara, A. [Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan)]. E-mail: sugahara@tsurugi.phys.sci.osaka-u.ac.jp; Ogawa, T. [Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Fujii, K. [Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Ohyama, T. [Liberal Arts, Fukui University of Technology, 3-6-1 Gakuen, Fukui, Fukui 910-8505 (Japan); Nakata, J. [Kyoto Semiconductor Corp. 418-9 Yodo Saime-cho, Fushimi-ku, Kyoto 613-0915 (Japan)

    2006-04-01

    Magneto-optical absorption measurements of Sb-doped germaniums grown under micro-gravity condition were carried out to investigate the influence of the gravity on crystal growth, using far-infrared laser and microwave. For comparison, we prepared two germanium crystals grown in the same conditions except the gravity conditions. In spite of the quite short growth period, the germanium grown under micro-gravity has a quite good quality. The lineshape analysis of Zeeman absorption peaks due to donor electrons indicates the existence of residual thermal acceptors.

  9. Oxygen defect processes in silicon and silicon germanium

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Faculty of Engineering and Computing, Coventry University, Priory Street, Coventry CV1 5FB (United Kingdom); Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Sgourou, E. N.; Londos, C. A. [Solid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens (Greece); Schwingenschlögl, U. [PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia)

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  10. Germanium 70: a gamma ray detector for astrophysics; Le germanium 70: un detecteur de rayons gamma en astrophysique

    Energy Technology Data Exchange (ETDEWEB)

    Durouchoux, P. [CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d`Astrophysique, de la Physique des Particules, de la Physique Nucleaire et de l`Instrumentation Associee

    1994-12-31

    A thorough study concerning the background noise generated from the germanium detectors used in astrophysics spatial experiences, is presented. These detectors, selected for their energy high definition, are sensitive to cosmic radiations that activate some isotopes contained in the natural germanium and induce background noise through a beta+ decay. This noise component may be notably reduced with utilization of {sup 70}Ge isotope enriched detectors, which do not present such interactions. The predictions have been verified through space tests conducted from Australia in 1992. Preliminary results and prospectives for astrophysics application of the Germanium 70 isotope, are discussed. 6 figs., 2 tabs., 3 refs.

  11. Germanium detectors and natural radioactivity in food

    Energy Technology Data Exchange (ETDEWEB)

    Garbini, Lucia [Max-Planck-Institut fuer Physik, Muenchen (Germany); Collaboration: GeDet-Collaboration

    2013-07-01

    Potassium is a very important mineral for many physiological processes, like fluid balance, protein synthesis and signal transmission in nerves. Many aliments like raisins, bananas or chocolate contain potassium. Natural potassium contains 0.012% of the radioactive isotope Potassium 40. This isotope decays via β{sup +} decay into a metastable state of Argon 40, which reaches its ground state emitting a gamma of 1460 keV. A commercially produced Germanium detector has been used to measure the energy spectra of different selected food samples. It was calibrated with KCl and potassium contents were extracted. Results verify the high potassium content of commonly recommended food samples. However, the measurement quantitatively differ from the expectations in several cases. One of the most interesting results concerns chocolate bars with different percentages of cacao.

  12. Synthesis of silicon and germanium nanowires.

    Energy Technology Data Exchange (ETDEWEB)

    Clement, Teresa J. (Arizona State University); Hsu, Julia W. P.

    2007-11-01

    The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silane, germane, disilane and digermane precursor gases has been investigated. The nanowire growth process combines in situ gold seed formation by vapor deposition on atomically clean silicon (111) surfaces, in situ growth from the gaseous precursor(s), and real-time monitoring of nanowire growth as a function of temperature and pressure by a novel optical reflectometry technique. A significant dependence on precursor pressure and growth temperature for the synthesis of silicon and germanium nanowires is observed, depending on the stability of the specific precursor used. Also, the presence of a nucleation time for the onset of nanowire growth has been found using our new in situ optical reflectometry technique.

  13. Electron paramagnetic resonance at dislocations in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Pakulis, E.J.

    1982-06-01

    The first observation of the paramagnetic resonance of electrons at dislocations in germanium single crystals is reported. Under subband gap optical excitation, two sets of lines are detected: four lines about the <111> axes with g/sub perpendicular to/ = 0.34 and g/sub parallel/ = 1.94, and 24 lines with g/sub perpendicular to/ = 0.73 and g/sub parallel/ = 1.89 about <111> axes with the six-fold 1.2/sup 0/ distortion. This represents the first measurement of the disortion angle of a dislocation dangling bond. The possibility that the distortion results from a Peierls transition along the dislocation line is discussed.

  14. Solid solubility of germanium in silver

    Energy Technology Data Exchange (ETDEWEB)

    Kazemi, Hamed [Laboratory of Mechanical Metallurgy, Ecole Polytechnique Federale de Lausanne, EPFL, CH-1015 Lausanne (Switzerland); Weber, Ludger, E-mail: ludger.weber@epfl.ch [Laboratory of Mechanical Metallurgy, Ecole Polytechnique Federale de Lausanne, EPFL, CH-1015 Lausanne (Switzerland)

    2012-09-20

    Highlights: Black-Right-Pointing-Pointer The solvus line in the binary Ag-Ge system has been assessed based on measurements of electrical resistivity and specific gravity. Black-Right-Pointing-Pointer The two measurement techniques yield close agreement. Black-Right-Pointing-Pointer The data found in this contribution indicate lower solid solubility than in previous assessments. Black-Right-Pointing-Pointer Redlich-Kister parameters have been evaluated to describe the solvus line. - Abstract: The solid solubility of germanium in silver has been measured in the temperature range of 520 K to 913 K via measurements of density and of electrical conductivity of two near-eutectic Ag-Ge alloys. The atomic fraction of germanium in solid solution varied between 0.014 and 0.089 over the mentioned range of temperature and an extrapolated maximum solubility of 0.093 at the eutectic temperature of 924 K is found. For samples with spheroidized Ge-particles before the equilibrium heat treatments at low temperature for 24 or 48 h, thermodynamic equilibrium was supposedly not achieved at temperatures below 723 K. Much longer heat treatments (tens of days) on the significantly finer as-cast microstructure allowed to reach equilibrium probably down to 600 K. Independently of whether thermodynamic equilibrium was reached or not the electrical conductivity and the density measurements yielded good agreement typically within a few tenth of percent of atomic Ge-concentration in solid solution in {alpha}-Ag for a given temperature. The results are close to, yet consistently slightly lower than, the values given by Owen and Rowland on which the current assessment of the solvus in the Ag-Ge binary is based. More recent results by Filipponi and co-workers are clearly not in agreement with the data presented here.

  15. Lattice site and thermal stability of transition metals in germanium

    CERN Document Server

    Augustyns, Valérie; Pereira, Lino

    Although the first transistor was based on germanium, current chip technology mainly uses silicon due to its larger abundance, a lower price and higher quality silicon-oxide. However, a very important goal in microelectronics is to obtain faster integrated circuits. The advantages of germanium compared to silicon (e.g. a higher mobility of the charge carriers) motivates further research on germanium based materials. Semiconductor doping (e.g. introducing impurities into silicon and germanium in order to alter - and control - their properties) can be done by ion implantation or by in situ doping, whereby the host material is doped during growth. This thesis focuses on introducing dopants by ion implantation. The implantation as well as the subsequent measurements were performed in ISOLDE (CERN) using the emission channeling technique. Although ion implantation generates undesired defects in the host material (e.g. vacancies), such damage can be reduced by performing the implantation at an elevated temperature....

  16. Localisation of spin orbit coupling in silicon-germanium alloys

    CERN Document Server

    Vincent, J K

    2002-01-01

    The validity of the standard method of treating silicon-germanium alloy systems - the virtual crystal approximation - is studied. The largest difference between the properties of silicon and germanium is the GAMMA-point spin orbit coupling (0.04 eV in silicon and 0.29 eV in germanium). As the spin orbit potential is delta function like it might be expected that simply smearing out the potential to an average in the alloy is not appropriate. Calculations using k centre dot p theory and the Empirical Pseudopotential method are performed to compare the density of states, bandstructure and dielectric function of supercell based silicon-germanium alloys with an averaged out (virtual crystal) spin orbit coupling potential and with the situation when the potential is localised at the germanium sites. In general it was found that the virtual crystal approximation holds for silicon-germanium as the localisation of the spin orbit potential caused only small changes in the energy levels of the system. However the effect...

  17. Protective infrared antireflection coating based on sputtered germanium carbide

    Science.gov (United States)

    Gibson, Des; Waddell, Ewan; Placido, Frank

    2011-09-01

    This paper describes optical, durablility and environmental performance of a germanium carbide based durable antireflection coating. The coating has been demonstrated on germanium and zinc selenide infra-red material however is applicable to other materials such as zinc sulphide. The material is deposited using a novel reactive closed field magnetron sputtering technique, offering significant advantages over conventional evaporation processes for germanium carbide such as plasma enhanced chemical vapour deposition. The sputtering process is "cold", making it suitable for use on a wide range of substrates. Moreover, the drum format provide more efficient loading for high throughput production. The use of the closed field and unbalanced magnetrons creates a magnetic confinement that extends the electron mean free path leading to high ion current densities. The combination of high current densities with ion energies in the range ~30eV creates optimum thin film growth conditions. As a result the films are dense, spectrally stable, supersmooth and low stress. Films incorporate low hydrogen content resulting in minimal C-H absorption bands within critical infra-red passbands such as 3 to 5um and 8 to 12um. Tuning of germanium carbide (Ge(1-x)Cx) film refractive index from pure germanium (refractive index 4) to pure germanium carbide (refractive index 1.8) will be demonstrated. Use of film grading to achieve single and dual band anti-reflection performance will be shown. Environmental and durability levels are shown to be suitable for use in harsh external environments.

  18. Consistency check of pulse shape discrimination for broad energy germanium detectors using double beta decay data

    International Nuclear Information System (INIS)

    The Gerda (GERmanium Detector Array) experiment was built to study fundamental neutrino properties via neutrinoless double beta decay (0νββ). 0νββ events are single-site events (SSE) confined to a scale about millimeter. However, most of backgrounds are multi-site events (MSE). Broad Energy Germanium detectors (BEGes) offer the potential merits of improved pulse shape recognition efficiencies of SSE/MSE. They allow us to reach the goal of Phase II with a background index of 10-3 cts/(keV.kg.yr) in the ROI. BEGe detectors with a total target mass of 3.63 kg have been installed to the Gerda setup in the Laboratori Nazionali del Gran Sasso (LNGS) in July 2012 and are collecting data since. A consistency check of the pulse shape discrimination (PSD) efficiencies by comparison of calibration data and 2νββ data will be presented. The PSD power of these detectors is demonstrated.

  19. Consistency check of pulse shape discrimination for broad energy germanium detectors using double beta decay data

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Heng-Ye [Max-Planck-Institut fuer Physik, Muenchen (Germany); Collaboration: GERDA-Collaboration

    2013-07-01

    The Gerda (GERmanium Detector Array) experiment was built to study fundamental neutrino properties via neutrinoless double beta decay (0νββ). 0νββ events are single-site events (SSE) confined to a scale about millimeter. However, most of backgrounds are multi-site events (MSE). Broad Energy Germanium detectors (BEGes) offer the potential merits of improved pulse shape recognition efficiencies of SSE/MSE. They allow us to reach the goal of Phase II with a background index of 10{sup -3} cts/(keV.kg.yr) in the ROI. BEGe detectors with a total target mass of 3.63 kg have been installed to the Gerda setup in the Laboratori Nazionali del Gran Sasso (LNGS) in July 2012 and are collecting data since. A consistency check of the pulse shape discrimination (PSD) efficiencies by comparison of calibration data and 2νββ data will be presented. The PSD power of these detectors is demonstrated.

  20. Astroparticle physics with a customized low-background broad energy Germanium detector

    Energy Technology Data Exchange (ETDEWEB)

    Aalseth, Craig E.; Amman, M.; Avignone, Frank T.; Back, Henning O.; Barabash, Alexander S.; Barbeau, P. S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Bugg, William; Burritt, Tom H.; Busch, Matthew; Capps, Greg L.; Chan, Yuen-Dat; Collar, J. I.; Cooper, R. J.; Creswick, R.; Detwiler, Jason A.; Diaz, J.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, Steven R.; Ely, James H.; Esterline, James H.; Farach, H. A.; Fast, James E.; Fields, N.; Finnerty, P.; Fujikawa, Brian; Fuller, Erin S.; Gehman, Victor M.; Giovanetti, G. K.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Harper, Gregory; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Hossbach, Todd W.; Howe, M. A.; Johnson, R. A.; Keeter, K.; Keillor, Martin E.; Keller, C.; Kephart, Jeremy D.; Kidd, Mary; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; Leviner, L.; Loach, J. C.; Luke, P.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Miley, Harry S.; Miller, M. L.; Mizouni, Leila; Myers, Allan W.; Nomachi, Masaharu; Orrell, John L.; Peterson, David; Phillips, D.; Poon, Alan; Prior, Gersende; Qian, J.; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Rodriguez, Larry; Rykaczewski, Krzysztof P.; Salazar, Harold; Schubert, Alexis G.; Shima, T.; Shirchenko, M.; Steele, David; Strain, J.; Swift, Gary; Thomas, K.; Timkin, V.; Tornow, W.; Van Wechel, T. D.; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Wilkerson, J. F.; Wolfe, B. A.; Xiang, W.; Yakushev, E.; Yaver, Harold; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C.; Zimmerman, S.

    2011-10-01

    The Majorana Collaboration is building the Majorana Demonstrator, a 60 kg array of high purity germanium detectors housed in an ultra-low background shield at the Sanford Underground Laboratory in Lead, SD. The Majorana Demonstrator will search for neutrinoless double-beta decay of 76Ge while demonstrating the feasibility of a tonne-scale experiment. It may also carry out a dark matter search in the 1-10 GeV/c² mass range. We have found that customized Broad Energy Germanium (BEGe) detectors produced by Canberra have several desirable features for a neutrinoless double-beta decay experiment, including low electronic noise, excellent pulse shape analysis capabilities, and simple fabrication. We have deployed a customized BEGe, the Majorana Low-Background BEGe at Kimballton (MALBEK), in a low-background cryostat and shield at the Kimballton Underground Research Facility in Virginia. This paper will focus on the detector characteristics and measurements that can be performed with such a radiation detector in a low-background environment.

  1. Hydrogen Bonding in Hydrogenated Amorphous Germanium

    Institute of Scientific and Technical Information of China (English)

    M.S.Abo-Ghazala; S. Al Hazmy

    2004-01-01

    Thin films of hydrogenated amorphous germanium (a-Ge:H) were prepared by radio frequency glow discharge deposition at various substrate temperatures. The hydrogen distribution and bonding structure in a-Ge:H were discussed based on infrared absorption data. The correlation between infrared absorption spectra and hydrogen effusion measurements was used to determine the proportionality constant for each vibration mode of the Ge-H bonds. The results reveal that the bending mode appearing at 835 cm?1 is associated with the Ge-H2 (dihydride) groups on the internal surfaces of voids. While 1880 cm?1 is assigned to vibrations of Ge-H (monohydride) groups in the bulk, the 2000 cm?1 stretching mode is attributed to Ge-H and Ge-H2 bonds located on the surfaces of voids. For films associated with bending modes in the infrared spectra, the proportionality constant values of the stretching modes near 1880 and 2000 cm?1 are found to be lower than those of films which had no corresponding bending modes.

  2. Anisotropic Optical Properties of Layered Germanium Sulfide

    CERN Document Server

    Tan, Dezhi; Wang, Feijiu; Mohamed, Nur Baizura; Mouri, Shinichiro; Sandhaya, Koirala; Zhang, Wenjing; Miyauchi, Yuhei; Ohfuchi, Mari; Matsuda, Kazunari

    2016-01-01

    Two-dimensional (2D) layered materials, transition metal dichalcogenides and black phosphorus, have attracted much interest from the viewpoints of fundamental physics and device applications. The establishment of new functionalities in anisotropic layered 2D materials is a challenging but rewarding frontier, owing to their remarkable optical properties and prospects for new devices. Here, we report the anisotropic optical properties of layered 2D monochalcogenide of germanium sulfide (GeS). Three Raman scattering peaks corresponding to the B3g, A1g, and A2g modes with strong polarization dependence are demonstrated in the GeS flakes, which validates polarized Raman spectroscopy as an effective method for identifying the crystal orientation of anisotropic layered GeS. Photoluminescence (PL) is observed with a peak at around 1.66 eV that originates from the direct optical transition in GeS at room temperature. Moreover, determination of the polarization dependent characteristics of the PL and absorption reveals...

  3. Demonstration of surface electron rejection with interleaved germanium detectors for dark matter searches

    Energy Technology Data Exchange (ETDEWEB)

    Agnese, R.; Balakishiyeva, D.; Saab, T.; Welliver, B. [Department of Physics, University of Florida, Gainesville, Florida 32611 (United States); Anderson, A. J.; Figueroa-Feliciano, E.; Hertel, S. A.; McCarthy, K. A. [Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Basu Thakur, R. [Fermi National Accelerator Laboratory, Batavia, Illinois 60510 (United States); Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illnois 61801 (United States); Bauer, D. A.; Holmgren, D.; Hsu, L.; Loer, B.; Schmitt, R. [Fermi National Accelerator Laboratory, Batavia, Illinois 60510 (United States); Borgland, A.; Brandt, D.; Brink, P. L.; Do Couto E Silva, E.; Godfrey, G. L.; Hasi, J. [SLAC National Accelerator Laboratory/Kavli Institute for Particle Astrophysics and Cosmology, 2575 Sand Hill Road, Menlo Park, California 94025 (United States); Collaboration: The SuperCDMS Collaboration; and others

    2013-10-14

    The SuperCDMS experiment in the Soudan Underground Laboratory searches for dark matter with a 9-kg array of cryogenic germanium detectors. Symmetric sensors on opposite sides measure both charge and phonons from each particle interaction, providing excellent discrimination between electron and nuclear recoils, and between surface and interior events. Surface event rejection capabilities were tested with two {sup 210}Pb sources producing ∼130 beta decays/hr. In ∼800 live hours, no events leaked into the 8–115 keV signal region, giving upper limit leakage fraction 1.7 × 10{sup −5} at 90% C.L., corresponding to < 0.6 surface event background in the future 200-kg SuperCDMS SNOLAB experiment.

  4. Prospects of cold dark matter searches with an ultra-low-energy germanium detector

    CERN Document Server

    Wong, H T

    2007-01-01

    The report describes the research program on the development of ultra-low-energy germanium detectors, with emphasis on WIMP dark matter searches. A threshold of 100 eV is achieved with a 20 g detector array, providing a unique probe to the low-mas WIMP. Present data at a surface laboratory is expected to give rise to comparable sensitivities with the existing limits at the $\\rm{5 - 10 GeV}$ WIMP-mass range. The projected parameter space to be probed with a full-scale, kilogram mass-range experiment is presented. Such a detector would also allow the studies of neutrino-nucleus coherent scattering and neutrino magnetic moments.

  5. Demonstration of Surface Electron Rejection with Interleaved Germanium Detectors for Dark Matter Searches

    Energy Technology Data Exchange (ETDEWEB)

    Agnese, R.; Anderson, A. J.; Balakishiyeva, D.; Basu Thakur, R.; Bauer, D. A.; Borgland, A.; Brandt, D.; Brink, P. L.; Bunker, R.; Cabrera, B.; Caldwell, D. O.; Cerdeno, D. G.; Chagani, H.; Cherry, M.; Cooley, J.; Cornell, B.; Crewdson, C. H.; Cushman, Priscilla B.; Daal, M.; Di Stefano, P. C.; Do Couto E Silva, E.; Doughty, T.; Esteban, L.; Fallows, S.; Figueroa-Feliciano, E.; Fox, J.; Fritts, M.; Godfrey, G. L.; Golwala, S. R.; Hall, Jeter C.; Harris, H. R.; Hasi, J.; Hertel, S. A.; Hines, B. A.; Hofer, T.; Holmgren, D.; Hsu, L.; Huber, M. E.; Jastram, A.; Kamaev, O.; Kara, B.; Kelsey, M. H.; Kenany, S.; Kennedy, A.; Kenney, C. J.; Kiveni, M.; Koch, K.; Loer, B.; Lopez Asamar, E.; Mahapatra, R.; Mandic, V.; Martinez, C.; McCarthy, K. A.; Mirabolfathi, N.; Moffatt, R. A.; Moore, D. C.; Nadeau, P.; Nelson, R. H.; Novak, L.; Page, K.; Partridge, R.; Pepin, M.; Phipps, A.; Prasad, K.; Pyle, M.; Qiu, H.; Radpour, R.; Rau, W.; Redl, P.; Reisetter, A.; Resch, R. W.; Ricci, Y.; Saab, T.; Sadoulet, B.; Sander, J.; Schmitt, R.; Schneck, K.; Schnee, Richard; Scorza, S.; Seitz, D.; Serfass, B.; Shank, B.; Speller, D.; Tomada, A.; Villano, A. N.; Welliver, B.; Wright, D. H.; Yellin, S.; Yen, J. J.; Young, B. A.; Zhang, J.

    2013-10-17

    The SuperCDMS experiment in the Soudan Underground Laboratory searches for dark matter with a 9-kg array of cryogenic germanium detectors. Symmetric sensors on opposite sides measure both charge and phonons from each particle interaction, providing excellent discrimination between electron and nuclear recoils, and between surface and interior events. Furthermore, surface event rejection capabilities were tested with two 210Pb sources producing ~130 beta decays/hr. We found that in ~800 live hours, no events leaked into the 8–115 keV signal region, giving upper limit leakage fraction 1.7 x 10-5 at 90% C.L., corresponding to<0.6 surface event background in the future 200-kg SuperCDMS SNOLAB experiment.

  6. Germanium, Arsenic, and Selenium Abundances in Metal-Poor Stars

    CERN Document Server

    Roederer, Ian U

    2012-01-01

    The elements germanium (Ge, Z=32), arsenic (As, Z=33), and selenium (Se, Z=34) span the transition from charged-particle or explosive synthesis of the iron-group elements to neutron-capture synthesis of heavier elements. Among these three elements, only the chemical evolution of germanium has been studied previously. Here we use archive observations made with the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope and observations from several ground-based facilities to study the chemical enrichment histories of seven stars with metallicities -2.6 < [Fe/H] < -0.4. We perform a standard abundance analysis of germanium, arsenic, selenium, and several other elements produced by neutron-capture reactions. When combined with previous derivations of germanium abundances in metal-poor stars, our sample reveals an increase in the [Ge/Fe] ratios at higher metallicities. This could mark the onset of the weak s-process contribution to germanium. In contrast, the [As/Fe] and [Se/Fe] ratios rema...

  7. Single-molecule conductance in atomically precise germanium wires.

    Science.gov (United States)

    Su, Timothy A; Li, Haixing; Zhang, Vivian; Neupane, Madhav; Batra, Arunabh; Klausen, Rebekka S; Kumar, Bharat; Steigerwald, Michael L; Venkataraman, Latha; Nuckolls, Colin

    2015-09-30

    While the electrical conductivity of bulk-scale group 14 materials such as diamond carbon, silicon, and germanium is well understood, there is a gap in knowledge regarding the conductivity of these materials at the nano and molecular scales. Filling this gap is important because integrated circuits have shrunk so far that their active regions, which rely so heavily on silicon and germanium, begin to resemble ornate molecules rather than extended solids. Here we unveil a new approach for synthesizing atomically discrete wires of germanium and present the first conductance measurements of molecular germanium using a scanning tunneling microscope-based break-junction (STM-BJ) technique. Our findings show that germanium and silicon wires are nearly identical in conductivity at the molecular scale, and that both are much more conductive than aliphatic carbon. We demonstrate that the strong donor ability of C-Ge σ-bonds can be used to raise the energy of the anchor lone pair and increase conductance. Furthermore, the oligogermane wires behave as conductance switches that function through stereoelectronic logic. These devices can be trained to operate with a higher switching factor by repeatedly compressing and elongating the molecular junction. PMID:26373928

  8. Reaction studies of hot silicon, germanium and carbon atoms

    Energy Technology Data Exchange (ETDEWEB)

    Gaspar, P.P.

    1990-11-01

    The goal of this project was to increase the authors understanding of the interplay between the kinetic and electronic energy of free atoms and their chemical reactivity by answering the following questions: (1) what is the chemistry of high-energy carbon silicon and germanium atoms recoiling from nuclear transformations; (2) how do the reactions of recoiling carbon, silicon and germanium atoms take place - what are the operative reaction mechanisms; (3) how does the reactivity of free carbon, silicon and germanium atoms vary with energy and electronic state, and what are the differences in the chemistry of these three isoelectronic atoms This research program consisted of a coordinated set of experiments capable of achieving these goals by defining the structures, the kinetic and internal energy, and the charge states of the intermediates formed in the gas-phase reactions of recoiling silicon and germanium atoms with silane, germane, and unsaturated organic molecules, and of recoiling carbon atoms with aromatic molecules. The reactions of high energy silicon, germanium, and carbon atoms created by nuclear recoil were studied with substrates chosen so that their products illuminated the mechanism of the recoil reactions. Information about the energy and electronic state of the recoiling atoms at reaction was obtained from the variation in end product yields and the extent of decomposition and rearrangement of primary products (usually reactive intermediates) as a function of total pressure and the concentration of inert moderator molecules that remove kinetic energy from the recoiling atoms and can induce transitions between electronic spin states. 29 refs.

  9. Investigation of the performance of various germanium detectors in a Compton suppression shield

    International Nuclear Information System (INIS)

    The performance of four germanium detectors with different geometries inside an escape suppression shield have been investigated. The measurements show that the use of escape suppression shields give an improved detection system. The best results were obtained for the biggest germanium detector used and there is also evidence that detectors with less inactive germanium layers give better results. (U.K.)

  10. Formation of non-equilibrium germanium-based solid solutions in al-ge-alloys

    Directory of Open Access Journals (Sweden)

    O.Yu. Bereza

    2012-08-01

    Full Text Available This article is devoted to the investigation of phase composition and microstructure of the higher cooled aluminum-germanium alloys. The formation of non-equilibrium germanium solid solutions is shown. The influence of the rate of cooling and the germanium percentage on the phase composition of alloys is shown.

  11. Liquid phase epitaxial growth and characterization of germanium far infrared blocked impurity band detectors

    International Nuclear Information System (INIS)

    Germanium Blocked Impurity Band (BIB) detectors require a high purity blocking layer ( and lt; 10(sup 13) cm(sup -3)) approximately 1 mm thick grown on a heavily doped active layer ((approx) 10(sup 16) cm(sup -3)) approximately 20 mm thick. Epilayers were grown using liquid phase epitaxy (LPE) of germanium out of lead solution. The effects of the crystallographic orientation of the germanium substrate on LPE growth modes were explored. Growth was studied on substrates oriented by Laue x-ray diffraction between 0.02(sup o) and 10(sup o) from the(lbrace)111(rbrace) toward the(lbrace)100(rbrace). Terrace growth was observed, with increasing terrace height for larger misorientation angles. It was found that the purity of the blocking layer was limited by the presence of phosphorus in the lead solvent. Unintentionally doped Ge layers contained(approx)10(sup 15) cm(sup -3) phosphorus as determined by Hall effect measurements and Photothermal Ionization Spectroscopy (PTIS). Lead purification by vacuum distillation and dilution reduced the phosphorus concentration in the layers to(approx) 10(sup 14) cm(sup -3) but further reduction was not observed with successive distillation runs. The graphite distillation and growth components as an additional phosphorus source cannot be ruled out. Antimony ((approx)10(sup 16) cm(sup -3)) was used as a dopant for the active BIB layer. A reduction in the donor binding energy due to impurity banding was observed by variable temperature Hall effect measurements. A BIB detector fabricated from an Sb-doped Ge layer grown on a pure substrate showed a low energy photoconductive onset ((approx)6 meV). Spreading resistance measurements on doped layers revealed a nonuniform dopant distribution with Sb pile-up at the layer surface, which must be removed by chemomechanical polishing. Sb diffusion into the pure substrate was observed by Secondary Ion Mass Spectroscopy (SIMS) for epilayers grown at 650 C. The Sb concentration at the interface dropped

  12. Liquid phase epitaxial growth and characterization of germanium far infrared blocked impurity band detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bandaru, Jordana

    2001-05-12

    Germanium Blocked Impurity Band (BIB) detectors require a high purity blocking layer (< 10{sup 13} cm{sup -3}) approximately 1 mm thick grown on a heavily doped active layer ({approx} 10{sup 16} cm{sup -3}) approximately 20 mm thick. Epilayers were grown using liquid phase epitaxy (LPE) of germanium out of lead solution. The effects of the crystallographic orientation of the germanium substrate on LPE growth modes were explored. Growth was studied on substrates oriented by Laue x-ray diffraction between 0.02{sup o} and 10{sup o} from the {l_brace}111{r_brace} toward the {l_brace}100{r_brace}. Terrace growth was observed, with increasing terrace height for larger misorientation angles. It was found that the purity of the blocking layer was limited by the presence of phosphorus in the lead solvent. Unintentionally doped Ge layers contained {approx}10{sup 15} cm{sup -3} phosphorus as determined by Hall effect measurements and Photothermal Ionization Spectroscopy (PTIS). Lead purification by vacuum distillation and dilution reduced the phosphorus concentration in the layers to {approx} 10{sup 14} cm{sup -3} but further reduction was not observed with successive distillation runs. The graphite distillation and growth components as an additional phosphorus source cannot be ruled out. Antimony ({approx}10{sup 16} cm{sup -3}) was used as a dopant for the active BIB layer. A reduction in the donor binding energy due to impurity banding was observed by variable temperature Hall effect measurements. A BIB detector fabricated from an Sb-doped Ge layer grown on a pure substrate showed a low energy photoconductive onset ({approx}6 meV). Spreading resistance measurements on doped layers revealed a nonuniform dopant distribution with Sb pile-up at the layer surface, which must be removed by chemomechanical polishing. Sb diffusion into the pure substrate was observed by Secondary Ion Mass Spectroscopy (SIMS) for epilayers grown at 650 C. The Sb concentration at the interface

  13. Characterisation of a Broad Energy Germanium (BEGe) detector

    Energy Technology Data Exchange (ETDEWEB)

    Barrientos, D., E-mail: diego_barrientos@usal.es [Laboratorio de Radiaciones Ionizantes, University of Salamanca (Spain); Boston, A.J.; Boston, H.C. [Nuclear Physics Group, University of Liverpool (United Kingdom); Quintana, B.; Sagrado, I.C. [Laboratorio de Radiaciones Ionizantes, University of Salamanca (Spain); Unsworth, C.; Moon, S.; Cresswell, J.R. [Nuclear Physics Group, University of Liverpool (United Kingdom)

    2011-08-21

    Characterisation of Germanium detectors used for gamma-ray tracking or medical imaging is one of the current goals in the Nuclear physics community. Good knowledge of detector response to different gamma radiations is needed for this purpose. In order to develop this task, Pulse Shape Analysis (PSA) techniques have been developed for different detector geometries or setups. In this work, we present the results of the application of PSA for a Canberra Broad Energy Germanium (BEGe) detector. This detector was scanned across its front and bottom face using a fully digital data acquisition system; allowing to record detector charge pulse shapes from well defined positions with collimated sources of {sup 241}Am, {sup 22}Na and {sup 137}Cs. With the study of the data acquired, characteristics of the inner detector geometry like crystal limits or positions of contact and isolate can be found, as well as the direction of the axes for the Germanium crystal.

  14. Phase transformations in two-layer germanium-tellurium condensates

    International Nuclear Information System (INIS)

    Investigation results of phase transformations, occuring in thin two-layer films germanium-tellurium with bilayer thickness of 20-30 up to 70-80 mm are presented. Two-layer films were produced by vacuum precipitation. Amorphous germanium and polycrystalline tellurium layer is detected in the initial films. Condensate warm-up by the electron beam leads to formation of a homogeneous amorphous GeTe film. It is ascertained, that the free energy of the formed compound film is lower than the free energy of thetw-layer condensate, i.e. condensate amorphization appears to be an energetically bemfitial process

  15. Ionization Efficiency Study for Low Energy Nuclear Recoils in Germanium

    CERN Document Server

    Barker, D; Mei, D -M; Zhang, C

    2013-01-01

    We used the internal conversion ($E_0$ transition) of germanium-72 to indirectly measure the low energy nuclear recoils of germanium. Together with a reliable Monte Carlo package, in which we implement the internal conversion process, the data was compared to the Lindhard ($k$=0.159) and Barker-Mei models. A shape analysis indicates that both models agree well with data in the region of interest within 4%. The most probable value (MPV) of the nuclear recoils obtained from the shape analysis is 17.5 keV with an average path-length of 0.014 $\\mu$m.

  16. LETTER TO THE EDITOR: Structure of densified amorphous germanium dioxide

    Science.gov (United States)

    Micoulaut, Matthieu

    2004-03-01

    Classical molecular dynamics simulations are used to study the structure of densified germanium dioxide (GeO2). It is found that the coordination number of germanium changes with increasing density (pressure) while pressure released systems exhibit only a marked angular change in local structure as compared to the virgin system. The structural modification with pressure appears to be stepwise and gradually affects long-range (through the reduction of the long-range correlations as seen from the shift of the first sharp diffraction peak), intermediate-range (by angular reduction) and finally short-range structure (by tetrahedron distortion).

  17. AGATA - Advanced GAmma Tracking Array

    Energy Technology Data Exchange (ETDEWEB)

    Akkoyun, S. [Department of Physics, Faculty of Science, Ankara University, 06100 Tandogan, Ankara (Turkey); Algora, A. [IFIC, CSIC-Universitat de Valencia, E-46980 Paterna (Spain); Alikhani, B. [IKP, TU Darmstadt, Schlossgartenstrasse 9, D-64289 Darmstadt (Germany); Ameil, F. [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, D-64291 Darmstadt (Germany); Angelis, G. de [INFN Laboratori Nazionali di Legnaro, IT-35020 Padova (Italy); Arnold, L. [Universite de Strasbourg, IPHC, 23 rue du Loess, 67037 Strasbourg (France); CNRS, UMR 7178, 67037 Strasbourg (France); Astier, A. [CSNSM, CNRS, IN2P3, Universite Paris-Sud, F-91405 Orsay (France); Atac, A. [Department of Physics, Faculty of Science, Ankara University, 06100 Tandogan, Ankara (Turkey); Department of Physics and Astronomy, Uppsala University, Uppsala (Sweden); Royal Institute of Technology, SE-10691 Stockholm (Sweden); Aubert, Y. [IPNO, CNRS/IN2P3, Universite Paris-Sud, F-91406 Orsay (France); Aufranc, C. [Universite de Lyon, Universite Lyon 1, CNRS-IN2P3, Institut de Physique Nucleaire de Lyon, F-69622 Villeurbanne (France); Austin, A. [STFC Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); Aydin, S. [INFN Sezione di Padova, IT-35131 Padova (Italy); Azaiez, F. [IPNO, CNRS/IN2P3, Universite Paris-Sud, F-91406 Orsay (France); Badoer, S. [INFN Laboratori Nazionali di Legnaro, IT-35020 Padova (Italy); Balabanski, D.L. [Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, Sofia (Bulgaria); Barrientos, D. [IFIC, CSIC-Universitat de Valencia, E-46980 Paterna (Spain); and others

    2012-03-11

    The Advanced GAmma Tracking Array (AGATA) is a European project to develop and operate the next generation {gamma}-ray spectrometer. AGATA is based on the technique of {gamma}-ray energy tracking in electrically segmented high-purity germanium crystals. This technique requires the accurate determination of the energy, time and position of every interaction as a {gamma} ray deposits its energy within the detector volume. Reconstruction of the full interaction path results in a detector with very high efficiency and excellent spectral response. The realisation of {gamma}-ray tracking and AGATA is a result of many technical advances. These include the development of encapsulated highly segmented germanium detectors assembled in a triple cluster detector cryostat, an electronics system with fast digital sampling and a data acquisition system to process the data at a high rate. The full characterisation of the crystals was measured and compared with detector-response simulations. This enabled pulse-shape analysis algorithms, to extract energy, time and position, to be employed. In addition, tracking algorithms for event reconstruction were developed. The first phase of AGATA is now complete and operational in its first physics campaign. In the future AGATA will be moved between laboratories in Europe and operated in a series of campaigns to take advantage of the different beams and facilities available to maximise its science output. The paper reviews all the achievements made in the AGATA project including all the necessary infrastructure to operate and support the spectrometer.

  18. Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

    Science.gov (United States)

    Szofran, F. R.; Volz, M. P.; Schweizer, M.; Cobb, S. D.; Motakef, S.; Croell, A.; Dold, P.; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2 at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS). The purpose of the microgravity experiments includes differentiating among proposed mechanisms contributing to detachment, and confirming or refining our understanding of the detachment mechanism. Because large contact angle are critical to detachment, sessile drop measurements were used to determine the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases from 150 deg to an equilibrium value of 117 deg (Ge) or from 129 deg to an equilibrium value of 100 deg (GeSi) over the duration of the experiment. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. Results in this presentation will show that we have established the effects on detachment of ampoule material, pressure difference above and below the melt, and silicon concentration; samples that are nearly completely detached can be grown repeatedly in pBN.

  19. Novel approach for n-type doping of HVPE gallium nitride with germanium

    Science.gov (United States)

    Hofmann, Patrick; Krupinski, Martin; Habel, Frank; Leibiger, Gunnar; Weinert, Berndt; Eichler, Stefan; Mikolajick, Thomas

    2016-09-01

    We present a novel method for germanium doping of gallium nitride by in-situ chlorination of solid germanium during the hydride vapour phase epitaxy (HVPE) process. Solid germanium pieces were placed in the doping line with a hydrogen chloride flow directed over them. We deduce a chlorination reaction taking place at 800 ° C , which leads to germanium chloroform (GeHCl3) or germanium tetrachloride (GeCl4). The reactor shows a germanium rich residue after in-situ chlorination experiments, which can be removed by hydrogen chloride etching. All gallium nitride crystals exhibit n-type conductivity, which shows the validity of the in-situ chlorination of germanium for doping. A complex doping profile is found for each crystal, which was assigned to a combination of localised supply of the dopant and sample rotation during growth and switch-off effects of the HVPE reactor.

  20. Radiation-enhanced self- and boron diffusion in germanium

    DEFF Research Database (Denmark)

    Schneider, S.; Bracht, H.; Klug, J.N.;

    2013-01-01

    We report experiments on proton radiation-enhanced self- and boron (B) diffusion in germanium (Ge) for temperatures between 515 ∘ C and 720 ∘ C. Modeling of the experimental diffusion profiles measured by means of secondary ion mass spectrometry is achieved on the basis of the Frenkel pair reaction...

  1. Active noise canceling system for mechanically cooled germanium radiation detectors

    Science.gov (United States)

    Nelson, Karl Einar; Burks, Morgan T

    2014-04-22

    A microphonics noise cancellation system and method for improving the energy resolution for mechanically cooled high-purity Germanium (HPGe) detector systems. A classical adaptive noise canceling digital processing system using an adaptive predictor is used in an MCA to attenuate the microphonics noise source making the system more deployable.

  2. Photomask technique for fabricating high purity germanium strip detectors

    International Nuclear Information System (INIS)

    A new technology for germanium strip detectors has been developed. This technique uses a photomask process which needs no growing and etching and allows all kinds of segmented electrodes. Typically we have obtained 1.2 keV FWHM on the 122 keV line of 57Co and a X-Y detector having 20 strips in each side. (orig.)

  3. Direct observations of the vacancy and its annealing in germanium

    DEFF Research Database (Denmark)

    Slotte, J.; Kilpeläinen, S.; Tuomisto, F.;

    2011-01-01

    Weakly n-type doped germanium has been irradiated with protons up to a fluence of 3×1014 cm-2 at 35 K and 100 K in a unique experimental setup. Positron annihilation measurements show a defect lifetime component of 272±4 ps at 35 K in in situ positron lifetime measurements after irradiation at 100...

  4. Discovery of Gallium, Germanium, Lutetium, and Hafnium Isotopes

    OpenAIRE

    J.L. Gross; Thoennessen, M

    2011-01-01

    Currently, twenty-eight gallium, thirty-one germanium, thirty-five lutetium, and thirty-six hafnium isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  5. Composite germanium monochromators - results for the TriCS

    Energy Technology Data Exchange (ETDEWEB)

    Schefer, J.; Fischer, S.; Boehm, M.; Keller, L.; Horisberger, M.; Medarde, M.; Fischer, P. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-09-01

    Composite germanium monochromators are in the beginning of their application in neutron diffraction. We show here the importance of the permanent quality control with neutrons on the example of the 311 wafers which will be used on the single crystal diffractometer TriCS at SINQ. (author) 2 figs., 3 refs.

  6. Strained-layer epitaxy of germanium-silicon alloys.

    Science.gov (United States)

    Bean, J C

    1985-10-11

    Despite the dominant position of silicon in semiconductor electronics, its use is ultimately limited by its incompatibility with other semiconducting materials. Strained-layer epitaxy overcomes problems of crystallographic compatibility and produces high-quality heterostructures of germanium-silicon layers on silicon. This opens the door to a range of electronic and photonic devices that are based on bandstructure physics. PMID:17842673

  7. Plasmonic Nanoslit Array Enhanced Metal-Semiconductor-Metal Optical Detectors

    CERN Document Server

    Eryilmaz, Sukru Burc; Okyay, Ali K

    2014-01-01

    Metallic nanoslit arrays integrated on germanium metal-semiconductor-metal photodetectors show many folds of absorption enhancement for transverse-magnetic polarization in the telecommunication C-band. Such high enhancement is attributed to resonant interference of surface plasmon modes at the metal-semiconductor interface. Horizontal surface plasmon modes were reported earlier to inhibit photodetector performance. We computationally show, however, that horizontal modes enhance the efficiency of surface devices despite reducing transmitted light in the far field.

  8. Broad Band Antireflection Coatings for Silicon and Germanium Substrates.

    Science.gov (United States)

    Bezuidenhout, Dirk Francois

    Infrared antireflection coatings for silicon and germanium substrates and some of the associated problems are addressed in this thesis. One of the first problems identified and investigated was that of the adhesion of ZnS films to germanium substrates. The cleaning of the Ge discs was evaluated by means of Auger spectroscopy. The main contaminant species found were carbon, oxygen and in the case of germanium substrates sulphur. No sulphur was found on silicon substrates. A wash in a series of organic solutions followed by a bake inside the vacuum chamber lead to much improved though still not acceptable adhesion of ZnS films to germanium substrates. The influence of a contact layer between the substrate and ZnS was investigated. Firstly, metal contact layers (Ni, Cr, Cu) were tried to improve the adhesion of the ZnS films. These samples (germanium-metal-zinc sulphide) were annealed in air in order to transfer the germanium -metal film to a germanide region and thus high optical transmission at long wave-lengths. Slight absorption still results even after the annealing of these samples. A dielectric material, Y_2O_3 , was therefore tested replacing the metal films. The system Ge-Y_2O_3 -ZnS in conjunction with an organic wash and vacuum bake lead to excellent adhesion of the ZnS layers to the germanium substrates. The next problem area addressed was that of a low refractive index material replacement for ThF _4. Four materials were investigated, i.e. ZnS, PbF_2, Y_2O _3 and YF_3. The refractive indices found for these compounds in thin film form at a wavelength of 10 μm is 2,18 for ZnS, 1,7 for PbF_2, 1,42 for Y_2O_3 and 1,3 for YF_3. From these results YF_3 was chosen as low refractive index material in the coating designs. Multi-layer coatings incorporating ZnS, Ge and YF_3 films were designed and evaporated. Measured reflectance values below 0,2% were obtained from 9 μm to 11 mum. These systems were stable and robust. Finally, a silicon ball lens was

  9. An environmentally-friendly vacuum reduction metallurgical process to recover germanium from coal fly ash.

    Science.gov (United States)

    Zhang, Lingen; Xu, Zhenming

    2016-07-15

    The demand for germanium in the field of semiconductor, electronics, and optical devices is growing rapidly; however, the resources of germanium are scarce worldwide. As a secondary material, coal fly ash could be further recycled to retrieve germanium. Up to now, the conventional processes to recover germanium have two problems as follows: on the one hand, it is difficult to be satisfactory for its economic and environmental effect; on the other hand, the recovery ratio of germanium is not all that could be desired. In this paper, an environmentally-friendly vacuum reduction metallurgical process (VRMP) was proposed to recover germanium from coal fly ash. The results of the laboratory scale experiments indicated that the appropriate parameters were 1173K and 10Pa with 10wt% coke addition for 40min, and recovery ratio germanium was 93.96%. On the basis of above condition, the pilot scale experiments were utilized to assess the actual effect of VRMP for recovery of germanium with parameter of 1473K, 1-10Pa and heating time 40min, the recovery ratio of germanium reached 94.64%. This process considerably enhances germanium recovery, meanwhile, eliminates much of the water usage and residue secondary pollution compared with other conventional processes. PMID:27015376

  10. Limits on dark matter from the St. Gotthard germanium detector

    International Nuclear Information System (INIS)

    A search for the presence of galactic cold dark matter has been performed using a single 140 cm3 (0.7 kg) germanium crystal. A low background germanium detectors installed in the St. Gotthard tunnel for the purpose of studying 76Ge double beta decay may serve as a sensitive detector for cold galactic dark matter. It is assumed that the dark matter consists of heavy Dirac neutrinos. A low detection threshold of 1.5 keV has been achieved, making the detector sensitive to Dirac neutrinos with masses above 12 GeV and a halo density of 0.30 GeV cm-3 at Earth. (R.P.) 5 refs.; 2 figs

  11. Synthesis and Gas Phase Thermochemistry of Germanium-Containing Compounds

    Energy Technology Data Exchange (ETDEWEB)

    Nathan Robert Classen

    2002-12-31

    The driving force behind much of the work in this dissertation was to gain further understanding of the unique olefin to carbene isomerization observed in the thermolysis of 1,1-dimethyl-2-methylenesilacyclobutane by finding new examples of it in other silicon and germanium compounds. This lead to the examination of a novel phenylmethylenesilacyclobut-2-ene, which did not undergo olefin to carbene rearrangement. A synthetic route to methylenegermacyclobutanes was developed, but the methylenegermacyclobutane system exhibited kinetic instability, making the study of the system difficult. In any case the germanium system decomposed through a complex mechanism which may not include olefin to carbene isomerization. However, this work lead to the study of the gas phase thermochemistry of a series of dialkylgermylene precursors in order to better understand the mechanism of the thermal decomposition of dialkylgermylenes. The resulting dialkylgermylenes were found to undergo a reversible intramolecular {beta} C-H insertion mechanism.

  12. Development of neutron-transmutation-doped germanium bolometer material

    International Nuclear Information System (INIS)

    The behavior of lattice defects generated as a result of the neutron-transmutation-doping of germanium was studied as a function of annealing conditions using deep level transient spectroscopy (DLTS) and mobility measurements. DLTS and variable temperature Hall effect were also used to measure the activation of dopant impurities formed during the transmutation process. In additioon, a semi-automated method of attaching wires on to small chips of germanium (3) for the fabrication of infrared detecting bolometers was developed. Finally, several different types of junction field effect transistors were tested for noise at room and low temperature (approx. 80 K) in order to find the optimum device available for first stage electronics in the bolometer signal amplification circuit

  13. Diffusion of n-type dopants in germanium

    International Nuclear Information System (INIS)

    Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation

  14. Diffusion of n-type dopants in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Engineering and Innovation, The Open University, Milton Keynes MK7 6AA (United Kingdom); Department of Materials, Imperial College, London SW7 2AZ (United Kingdom); Bracht, H., E-mail: bracht@uni-muenster.de [Institute of Materials Physics, University of Münster, Wilhelm-Klemm-Strasse 10, D-48149 Münster (Germany)

    2014-03-15

    Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation.

  15. Electronic Structure of Germanium Nanocrystal Films Probed with Synchrotron Radiation

    Energy Technology Data Exchange (ETDEWEB)

    Bostedt, C

    2002-05-01

    The fundamental structure--property relationship of semiconductor quantum dots has been investigated. For deposited germanium nanocrystals strong quantum confinement effects have been determined with synchrotron radiation based x-ray absorption and photoemission techniques. The nanocrystals are condensed out of the gas phase with a narrow size distribution and subsequently deposited in situ onto various substrates. The particles are crystalline in the cubic phase with a structurally disordered surface shell and the resulting film morphology depends strongly on the substrate material and condition. The disordered surface region has an impact on the overall electronic structure of the particles. In a size-dependent study, the conduction and valence band edge of germanium nanocrystals have been measured for the first time and compared to the bulk crystal. The band edges move to higher energies as the particle size is decreased, consistent with quantum confinement theory. To obtain a more accurate analysis of confinement effects in the empty states, a novel analysis method utilizing an effective particle size for the x-ray absorption experiment, which allows a deconvolution of absorption edge broadening effects, has been introduced. Comparison of the present study to earlier studies on silicon reveals that germanium exhibits stronger quantum confinement effects than silicon. Below a critical particle size of 2.3 {+-} 0.7 nm, the band gap of germanium becomes larger than that of silicon--even if it is the opposite for bulk materials. This result agrees phenomenologically with effective mass and tight binding theories but contradicts the findings of recent pseudopotential calculations. The discrepancy between theory and experiments is attributed to the differences in the theoretical models and experimental systems. The experimentally observed structural disorder of the particle surface has to be included in the theoretical models.

  16. Average resonance parameters of germanium and selenium nuclei

    International Nuclear Information System (INIS)

    Full sets of average resonance parameters S0, S1, R0', R1', S1,3/2 for germanium and selenium nuclei with natural isotope content are determined. Parameters are received from the analysis of experimental neutron elastic scattering cross sections at energy region up to 440 keV with the help of the method developed by the authors. The analysis of recommended parameters and some literature data is fulfilled as well.

  17. Strain-induced changes to the electronic structure of germanium

    KAUST Repository

    Tahini, H. A.

    2012-04-17

    Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.

  18. Optical properties of silicon germanium waveguides at telecommunication wavelengths.

    Science.gov (United States)

    Hammani, Kamal; Ettabib, Mohamed A; Bogris, Adonis; Kapsalis, Alexandros; Syvridis, Dimitris; Brun, Mickael; Labeye, Pierre; Nicoletti, Sergio; Richardson, David J; Petropoulos, Periklis

    2013-07-15

    We present a systematic experimental study of the linear and nonlinear optical properties of silicon-germanium (SiGe) waveguides, conducted on samples of varying cross-sectional dimensions and Ge concentrations. The evolution of the various optical properties for waveguide widths in the range 0.3 to 2 µm and Ge concentrations varying between 10 and 30% is considered. Finally, we comment on the comparative performance of the waveguides, when they are considered for nonlinear applications at telecommunications wavelengths.

  19. Massive silicon or germanium detectors at cryogenic temperature

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dip. Fisica dell' Universita di Ferrara and INFN, via del Paradiso 12, 44100 Ferrara (Italy); Bressi, G. [INFN, sez.Pavia, Via U. Bassi 6, 27100 Pavia (Italy); Carugno, G. [INFN, sez. Padova, Via Marzolo 8, 35131 Padova (Italy); Feltrin, E. [INFN, Lab. Naz. Legnaro, Via dell' Universita 1, 35020 Legnaro (PD) (Italy)]. E-mail: feltrin@lnl.infn.it; Galeazzi, G. [INFN, Lab. Naz. Legnaro, Via dell' Universita 1, 35020 Legnaro (PD) (Italy)

    2006-11-30

    Several massive silicon and germanium home-made detectors, working at cryogenic temperature, have been studied. They are the benchmarking schemes to check the possibility of realizing a semiconductor time projection chamber that could have various interesting applications in weak interaction problems. Reported here are the first results on investigations of charge collection efficiency and metal-semiconductor contact hardness. The leakage current, total depletion voltage and alpha or gamma spectroscopy are presented.

  20. Impacts of Atomistic Coating on Thermal Conductivity of Germanium Nanowires

    OpenAIRE

    Chen, Jie; Zhang, Gang; Li, Baowen

    2012-01-01

    By using non-equilibrium molecular dynamics simulations, we demonstrated that thermal conductivity of Germanium nanowires can be reduced more than 25% at room temperature by atomistic coating. There is a critical coating thickness beyond which thermal conductivity of the coated nanowire is larger than that of the host nanowire. The diameter dependent critical coating thickness and minimum thermal conductivity are explored. Moreover, we found that interface roughness can induce further reducti...

  1. Synthesis and characterization of Germanium quantum dots for thermoelectric applications

    OpenAIRE

    Hojabri, arash

    2015-01-01

    Energy resources are a main factor for the development of industry and human life, however, the use of fusil fuels as energy is harmful to the environment. Taking these two matters into consideration, the use of waste energy is a good response. The thermoelectric phenomena, which was, discovered in the 18th century plays a main role in converting waste heat energy to electricity and vice-versa. Germanium quantum dots (Ge QDs) have received special attention due to their unusual electrical and...

  2. Diffusion of tin in germanium: A GGA+U approach

    KAUST Repository

    Tahini, H. A.

    2011-10-18

    Density functional theory calculations are used to investigate the formation and diffusion of tin-vacancy pairs (SnV) in germanium(Ge). Depending upon the Fermi energy, SnV pairs can form in neutral, singly negative, or doubly negative charged states. The activation energies of diffusion, also as function of the Fermi energy, are calculated to lie between 2.48-3.65 eV, in agreement with and providing an interpretation of available experimental work.

  3. Ameliorating neutron damage in orthogonal-strip planar germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, E.G., E-mail: Emily_Jackson@student.uml.edu [Department of Physics and Applied Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Hull, E.L. [PHDS Company, 3011 Amherst Road, Knoxville, TN 37921 (United States); Lister, C.J. [Department of Physics and Applied Physics, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Pehl, R.H. [PHDS Company, 3011 Amherst Road, Knoxville, TN 37921 (United States)

    2015-02-21

    The segmentation of the electrodes of germanium detectors facilitates gamma-ray imaging and tracking. Replacing the traditional n-type lithium drifted contact is a key to finer segmentation. Amorphous-germanium is a promising alternative contact technology, and large, highly segmented detectors have been fabricated. One factor in adopting any new detector technology is its robustness in hostile environments. Therefore, to explore the effects of neutron damage on position sensitive amorphous-contact germanium gamma-ray detectors and investigate methods for mitigation and repair of damage, two detectors were intentionally exposed to a non-uniform neutron fluence of greater than 4(1) ×10{sup 9} n/cm{sup 2} produced in the {sup 7}Li(p, n){sup 7}Be reaction at the UMass Lowell Van-de-Graaff accelerator. Post-irradiation tests were made on the counters by varying the electric field, the charge deposition rate, the operating temperature, and utilizing various annealing cycles in order to ascertain the robustness of their performance after irradiation.

  4. Monte Carlo simulation of the X-ray response of a germanium microstrip detector with energy and position resolution

    CERN Document Server

    Rossi, G; Fajardo, P; Morse, J

    1999-01-01

    We present Monte Carlo computer simulations of the X-ray response of a micro-strip germanium detector over the energy range 30-100 keV. The detector consists of a linear array of lithographically defined 150 mu m wide strips on a high purity monolithic germanium crystal of 6 mm thickness. The simulation code is divided into two parts. We first consider a 10 mu m wide X-ray beam striking the detector surface at normal incidence and compute the interaction processes possible for each photon. Photon scattering and absorption inside the detector crystal are simulated using the EGS4 code with the LSCAT extension for low energies. A history of events is created of the deposited energies which is read by the second part of the code which computes the energy histogram for each detector strip. Appropriate algorithms are introduced to account for lateral charge spreading occurring during charge carrier drift to the detector surface, and Fano and preamplifier electronic noise contributions. Computed spectra for differen...

  5. Transfer-less flexible and transparent high-κ/metal gate germanium devices on bulk silicon (100)

    KAUST Repository

    Nassar, Joanna M.

    2014-08-01

    Flexible wearable electronics have been of great interest lately for the development of innovative future technology for various interactive applications in the field of consumer electronics and advanced healthcare, offering the promise of low-cost, lightweight, and multifunctionality. In the pursuit of this trend, high mobility channel materials need to be investigated on a flexible platform, for the development of flexible high performance devices. Germanium (Ge) is one of the most attractive alternatives for silicon (Si) for high-speed computational applications, due its higher hole and electron mobility. Thus, in this work we show a cost effective CMOS compatible process for transforming conventional rigid Ge metal oxide semiconductor capacitors (MOSCAPS) into a mechanically flexible and semi-transparent platform. Devices exhibit outstanding bendability with a bending radius of 0.24 cm, and semi-transparency up to 30 %, varying with respect to the diameter size of the release holes array.

  6. Developments in large gamma-ray detector arrays

    CERN Document Server

    Lee, I Y; Vetter, K

    2003-01-01

    Gamma-ray spectroscopy was revolutionized with the introduction of high energy-resolution semiconductor germanium (Ge) detectors in the early 1960s. This led to the large increase in sensitivity realized by today's arrays of Compton-suppressed Ge detectors. A still larger increase in sensitivity is expected by implementing the new concept of tracking. A tracking array consists of highly segmented Ge detectors (that can cover the full 4 pi solid-angle) in which gamma rays will be identified by measuring and tracking every gamma ray interaction. This article reviews the physics motivation for such detectors and the development of the new technologies involved. The concept of tracking is explained using the example of a proposed array called gamma-ray energy tracking array (GRETA).

  7. Ion-beam induced structure modifications in amorphous germanium; Ionenstrahlinduzierte Strukturmodifikationen in amorphem Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, Tobias

    2012-05-03

    Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy {epsilon}{sub n} deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 {mu}m thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of {epsilon}{sub e}{sup HRF}=(10.5{+-}1.0) kev nm{sup -1} was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation {epsilon}{sub e}{sup S{sub a}}=(12{+-}2) keV nm{sup -1} for the first

  8. DFT normal coordinate analysis of the vibrational spectra of iron and germanium corroles

    NARCIS (Netherlands)

    Zakharieva, O.; Veeger, C.

    2005-01-01

    DFT calculations on the vibrational modes of [FeCl(OECorr)], [FeCl(TPCorr)], [FeC6H5(OECorr)] and the corresponding germanium systems, [GeCl(OECorr)], [GeCl(TPCorr)] and [GeC6H 5(OECorr)] are for the first time presented. In addition DFT calculations on the electronic structure of the germanium corr

  9. Demonstration of Surface Electron Rejection with Interleaved Germanium Detectors for Dark Matter Search

    CERN Document Server

    Agnese, R; Balakishiyeva, D; Thakur, R Basu; Bauer, D A; Borgland, A; Brandt, D; Brink, P L; Bunker, R; Cabrera, B; Caldwell, D O; Cerdeno, D G; Chagani, H; Cherry, M; Cooley, J; Cornell, B; Crewdson, C H; Cushman, P; Daal, M; Di Stefano, P C F; Silva, E Do Couto E; Doughty, T; Esteban, L; Fallows, S; Figueroa-Feliciano, E; Fox, J; Fritts, M; Godfrey, G L; Golwala, S R; Hall, J; Harris, H R; Hasi, J; Hertel, S A; Hines, B A; Hofer, T; Holmgren, D; Hsu, L; Huber, M E; Jastram, A; Kamaev, O; Kara, B; Kelsey, M H; Kenany, S A; Kennedy, A; Kenney, C J; Kiveni, M; Koch, K; Loer, B; Asamar, E Lopez; Mahapatra, R; Mandic, V; Martinez, C; McCarthy, K A; Mirabolfathi, N; Moffatt, R A; Moore, D C; Nadeau, P; Nelson, R H; Novak, L; Page, K; Partridge, R; Pepin, M; Phipps, A; Prasad, K; Pyle, M; Qiu, H; Radpour, R; Rau, W; Redl, P; Reisetter, A; Resch, R W; Ricci, Y; Saab, T; Sadoulet, B; Sander, J; Schmitt, R; Schneck, K; Schnee, R W; Scorza, S; Seitz, D; Serfass, B; Shank, B; Speller, D; Tomada, A; Villano, A N; Welliver, B; Wright, D H; Yellin, S; Yen, J J; Young, B A; Zhang, J

    2013-01-01

    SuperCDMS, a direct search for WIMPs, is currently operating a 9-kg array of cryogenic germanium (Ge) detectors in the Soudan Underground Laboratory. These detectors, known as iZIPs, use ionization and phonon sensors placed symmetrically on both sides of a Ge crystal to measure both charge and athermal phonons from each particle interaction. The information from each event provides excellent discrimination between electron recoils and nuclear recoils, as well as discrimination between events on the detector surface and those in the interior. To demonstrate the surface electron rejection capabilities, two $^{210}$Pb sources were installed facing detectors, producing $\\sim$130 beta decays/hr. In $\\sim$800 live hours, no events leaked into the WIMP signal region in the recoil energy range 8--115 keVr, providing an upper limit to the surface event leakage fraction of $1.7 \\times 10^{-5}$ at 90% C.L. This rejection factor demonstrates that surface electrons would produce $< 0.6$ event background in the 0.3 ton-...

  10. Array tomography: imaging stained arrays.

    Science.gov (United States)

    Micheva, Kristina D; O'Rourke, Nancy; Busse, Brad; Smith, Stephen J

    2010-11-01

    Array tomography is a volumetric microscopy method based on physical serial sectioning. Ultrathin sections of a plastic-embedded tissue are cut using an ultramicrotome, bonded in an ordered array to a glass coverslip, stained as desired, and imaged. The resulting two-dimensional image tiles can then be reconstructed computationally into three-dimensional volume images for visualization and quantitative analysis. The minimal thickness of individual sections permits high-quality rapid staining and imaging, whereas the array format allows reliable and convenient section handling, staining, and automated imaging. Also, the physical stability of the arrays permits images to be acquired and registered from repeated cycles of staining, imaging, and stain elution, as well as from imaging using multiple modalities (e.g., fluorescence and electron microscopy). Array tomography makes it possible to visualize and quantify previously inaccessible features of tissue structure and molecular architecture. However, careful preparation of the tissue is essential for successful array tomography; these steps can be time-consuming and require some practice to perfect. In this protocol, tissue arrays are imaged using conventional wide-field fluorescence microscopy. Images can be captured manually or, with the appropriate software and hardware, the process can be automated. PMID:21041399

  11. Array tomography: production of arrays.

    Science.gov (United States)

    Micheva, Kristina D; O'Rourke, Nancy; Busse, Brad; Smith, Stephen J

    2010-11-01

    Array tomography is a volumetric microscopy method based on physical serial sectioning. Ultrathin sections of a plastic-embedded tissue are cut using an ultramicrotome, bonded in an ordered array to a glass coverslip, stained as desired, and imaged. The resulting two-dimensional image tiles can then be reconstructed computationally into three-dimensional volume images for visualization and quantitative analysis. The minimal thickness of individual sections permits high-quality rapid staining and imaging, whereas the array format allows reliable and convenient section handling, staining, and automated imaging. Also, the physical stability of the arrays permits images to be acquired and registered from repeated cycles of staining, imaging, and stain elution, as well as from imaging using multiple modalities (e.g., fluorescence and electron microscopy). Array tomography makes it possible to visualize and quantify previously inaccessible features of tissue structure and molecular architecture. However, careful preparation of the tissue is essential for successful array tomography; these steps can be time consuming and require some practice to perfect. This protocol describes the sectioning of embedded tissues and the mounting of the serial arrays. The procedures require some familiarity with the techniques used for ultramicrotome sectioning for electron microscopy. PMID:21041397

  12. Femtosecond Laser Processing of Germanium: An Ab Initio Molecular Dynamics Study

    CERN Document Server

    Ji, Pengfei

    2016-01-01

    An ab initio molecular dynamics study of femtosecond laser processing of germanium is presented in this paper. The method based on the finite temperature density functional theory is adopted to probe the structural change, thermal motion of the atoms, dynamic property of the velocity autocorrelation, and the vibrational density of states. Starting from a cubic system at room temperature (300 K) containing 64 germanium atoms with an ordered arrangement of 1.132 nm in each dimension, the femtosecond laser processing is simulated by imposing the Nose Hoover thermostat to the electronic subsystem lasting for ~100 fs and continuing with microcanonical ensemble simulation of ~200 fs. The simulation results show solid, liquid and gas phases of germanium under adjusted intensities of the femtosecond laser irradiation. We find the irradiated germanium distinguishes from the usual germanium crystal by analyzing their melting and dynamic properties.

  13. HEROICA: an Underground Facility for the Fast Screening of Germanium Detectors

    CERN Document Server

    Andreotti, E; Maneschg, W; Barros, N; Benato, G; Brugnera, R; Costa, F; Falkenstein, R; Guthikonda, K K; Hegai, A; Hemmer, S; Hult, M; Jaenner, K; Kihm, T; Lehnert, B; Liao, H; Lubashevskiy, A; Lutter, G; Marissens, G; Modenese, L; Pandola, L; Reissfelder, M; Sada, C; Salathe, M; Schmitt, C; Schulz, O; Schwingenheuer, B; Turcato, M; Ur, C; von Sturm, K; Wagner, V; Westermann, J

    2013-01-01

    An infrastructure to characterize germanium detectors has been designed and constructed at the HADES Underground Research Laboratory, located in Mol (Belgium). Thanks to the 223m overburden of clay and sand, the muon flux is lowered by four orders of magnitude. This natural shield minimizes the exposure of radio-pure germanium material to cosmic radiation resulting in a significant suppression of cosmogenic activation in the germanium detectors. The project has been strongly motivated by a special production of germanium detectors for the GERDA experiment. GERDA, currently collecting data at the Laboratori Nazionali del Gran Sasso of INFN, is searching for the neutrinoless double beta decay of 76Ge. In the near future, GERDA will increase its mass and sensitivity by adding new Broad Energy Germanium (BEGe) detectors. The production of the BEGe detectors is done at Canberra in Olen (Belgium), located about 30km from the underground test site. Therefore, HADES is used both for storage of the crystals over night...

  14. Suspended germanium cross-shaped microstructures for enhancing biaxial tensile strain

    Science.gov (United States)

    Ishida, Satomi; Kako, Satoshi; Oda, Katsuya; Ido, Tatemi; Iwamoto, Satoshi; Arakawa, Yasuhiko

    2016-04-01

    We fabricate a suspended germanium cross-shaped microstructure to biaxially enhance residual tensile strain using a germanium epilayer directly grown on a silicon-on-insulator substrate. Such a suspended germanium system with enhanced biaxial tensile strain will be a promising platform for incorporating optical cavities toward the realization of germanium lasers. We demonstrate systematic control over biaxial tensile strain and photoluminescence peaks by changing structural geometry. The photoluminescence peaks corresponding to the direct recombination between the conduction Γ valley and two strain-induced separated valence bands have been clearly assigned. A maximum biaxial strain of 0.8% has been achieved, which is almost half of that required to transform germanium into a direct band-gap semiconductor.

  15. Electonic properties of hydrogenated amorphous silicon-germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Bullot, J.; Galin, M.; Gauthier, M. (Universite de Paris-Sud, Orsay (France)); Bourdon, B. (CIT-Alcatel Transmission, Marcoussis (France))

    1983-06-01

    The electronic properties of some binary hydrogenated amorphous silicon-germanium alloys a-Sisub(x)Gesub(1-x):H in the silicon rich region (x > 0.6) are investigated. Experimental evidence is presented of photo-induced effects similar to those described in Si:H (Staebler-Wronski effect). The electronic properties are then studied from the dual point of view of the germanium content dependence and of the photo and thermal histories of the films. The dark conductivity changes between the annealed state and the light-soaked state are interpreted in terms of the variation of the temperature coefficient of the Fermi level. The photoconductivity efficiency is shown to remain close to that of a-Si:H for 1 > x >= 0.9 and to strongly decrease when the germanium content is further increased: the photoresponse of the Sisub(0.62)Gesub(0.38) alloy is 10/sup 4/ times smaller than that of a-Si:H. This deterioration of the photoconductive properties is explained in terms of the increase of the density of gap states following Ge substitution. This conclusion is based on the study of the width of the exponential absorption edge and on the results of photoconductivity time response studies. The latter data are interpreted by means of the model of Rose of trapping and recombination kinetics and it is found that for x approximately 0.6 the density of states at 0.4-0.5 eV below the mobility edge is 7 x 10/sup 17/ eV/sup -1/ cm/sup -3/ as compared to 2.4 x 10/sup 16/ eV/sup -1/ cm/sup -3/ for x = 0.97.

  16. Electric current induced modification of germanium nanowire NEM switch contact

    Science.gov (United States)

    Meija, R.; Kosmaca, J.; Jasulaneca, L.; Petersons, K.; Biswas, S.; Holmes, J. D.; Erts, D.

    2015-05-01

    We present an investigation of contact properties of a germanium (Ge) nanowire based nanoelectromechanical (NEM) switch in its ON state. The contact stiffness in the ON state was evaluated by detecting the nanowire’s resonance frequency. It was found that the resonance frequency increases when electric current flows through the nanowire/counter electrode contact area. The reason for modification in the contact area is referred to as electric-current-induced processes in the native oxide layer covering the nanowires. The presented resonance shift method is a simple way to indicate strengthening of the nanowire/counter electrode contact area without disassembling the contact.

  17. Resonance-enhanced waveguide-coupled silicon-germanium detector

    CERN Document Server

    Alloatti, Luca

    2016-01-01

    A photodiode with 0.55$\\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.

  18. Phonon Quasidiffusion in Cryogenic Dark Matter Search Large Germanium Detectors

    CERN Document Server

    Leman, S W; McCarthy, K A; Pyle, M; Resch, R; Sadoulet, B; Sundqvist, K M; Brink, P L; Cherry, M; Silva, E Do Couto E; Figueroa-Feliciano, E; Mirabolfathi, N; Serfass, B; Tomada, A

    2011-01-01

    We present results on quasidiffusion studies in large, 3 inch diameter, 1 inch thick [100] high purity germanium crystals, cooled to 50 mK in the vacuum of a dilution refrigerator, and exposed with 59.5 keV gamma-rays from an Am-241 calibration source. We compare data obtained in two different detector types, with different phonon sensor area coverage, with results from a Monte Carlo. The Monte Carlo includes phonon quasidiffusion and the generation of phonons created by charge carriers as they are drifted across the detector by ionization readout channels.

  19. Silicon-germanium nanostructures for on-chip optical interconnects

    Energy Technology Data Exchange (ETDEWEB)

    Tsybeskov, L.; Lee, E.K.; Chang, H.Y. [New Jersey Institute of Technology, Department of Electrical and Computer Engineering, Newark, NJ (United States); Lockwood, D.J.; Baribeau, J.M.; Wu, X. [National Research Council, Institute for Microstructural Sciences, Ottawa (Canada); Kamins, T.I. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States)

    2009-06-15

    Silicon-germanium epitaxially grown on silicon in the form of two-dimensional (quantum wells) and three-dimensional (quantum dots) nanostructures exhibits photoluminescence and electroluminescence in the technologically important spectral range of 1.3-1.6 {mu}m. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency, and a long carrier radiative lifetime. This paper summarizes recent progress in the understanding of carrier recombination in Si/SiGe nanostructures and presents a potential new route toward CMOS compatible light emitters for on-chip optical interconnects. (orig.)

  20. Effect of pressure on arsenic diffusion in germanium

    International Nuclear Information System (INIS)

    We report preliminary results of a study of the activation volume for diffusion of arsenic in germanium. High-temperature high-pressure anneals were performed in a liquid argon pressure medium in a diamond anvil cell capable of reaching 5 GPa and 750 C,l which is externally heated for uniform and repeatable temperature profiles. Broadening of an ion-implanted arsenic profile was measured by Secondary Ion Mass Spectrometry. Hydrostatic pressure retards the diffusivity at 575 C, characterized by an activation volume that is +15% of the atomic volume of Ge. Implications for diffusion mechanisms are discussed

  1. Mechanism of Germanium-Induced Perimeter Crystallization of Amorphous Silicon

    OpenAIRE

    Hakim, M. M. A.; Ashburn, P.

    2007-01-01

    We report a study aimed at highlighting the mechanism of a new amorphous silicon crystallization phenomenon that originates from the perimeter of a germanium layer during low-temperature annealing (500°C). Results are reported on doped and undoped amorphous silicon films, with thicknesses in the range 40–200 nm, annealed at a temperature of 500 or 550°C. A comparison is made of crystallization arising from Ge and SiGe layers and the role of damage from a high-dose fluorine implant is investig...

  2. Synthesis and characterization of Germanium quantum dots for thermoelectric applications

    OpenAIRE

    Hojabri, arash

    2015-01-01

    Energy resources are a main factor for the development of industry and human life, however, the use of fusil fuels as energy is harmful to the environment. Taking these two matters into consideration, the use of waste energy is a good response. The thermoelectric phenomena, which was, discovered in the 18th century plays a main role in converting waste heat energy to electricity and vice-versa.  Germanium quantum dots (Ge QDs) have received special attention due to their unusual electrical an...

  3. Ultra-Low Noise Mechanically Cooled Germanium Detector

    CERN Document Server

    Barton, Paul; Martin, Ryan; Vetter, Kai

    2015-01-01

    Low capacitance, large volume, high purity germanium (HPGe) radiation detectors have been successfully employed in low-background physics experiments. However, some physical processes may not be detectable with existing detectors whose energy thresholds are limited by electronic noise. In this paper, methods are presented which can lower the electronic noise of these detectors. Through ultra-low vibration mechanical cooling and wire bonding of a CMOS charge sensitive preamplifier to a sub-pF p-type point contact HPGe detector, we demonstrate electronic noise levels below 40 eV-FWHM.

  4. Low capacitance large volume shaped-field germanium detector

    International Nuclear Information System (INIS)

    A large volume (150 cm3) germanium detector with a full- depletion capacitance of only ∼1 pf has been fabricated. The effect of impurity space-charge was utilized to obtain an appropriate electric field distribution in the detector so that carriers are collected on a small area electrode. Detectors based on this principle are capable of very low noise operation and have immediate applications in direct detection dark matter particle experiments. Detector pulse shapes and carrier trapping effects were also examined for possible applications involving higher energy radiations. 9 refs., 10 figs

  5. Cryostat for Ultra-low-energy Threshold Germanium Spectrometers

    Energy Technology Data Exchange (ETDEWEB)

    Aalseth, Craig E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Bonicalzi, Ricco [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Fast, James E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Hossbach, Todd W. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Orrell, John L. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Overman, Cory T. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); VanDevender, Brent A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2013-04-01

    This paper presents progress on the development of a cryostat intended to improve upon the low-energy threshold (below 0.5 keV) of p-type point contact germanium gamma-ray spectrometers. Ultra-low energy thresholds are important in the detection of low-energy nuclear recoils, an event class relevant to both dark matter direct detection and measurement of coherent neutrino-nucleus scattering. The cryostat design, including a thermal and electrical-field model, is presented. A prototype cryostat has been assembled and data acquired to evaluate its vacuum and thermal performance.

  6. Cryostat for Ultra-low-energy Threshold Germanium Spectrometers

    CERN Document Server

    Aalseth, Craig E; Fast, James E; Hossbach, Todd W; Orrell, John L; Overman, Cory T; Vandevender, Brent A

    2012-01-01

    This paper presents progress on the development of a cryostat intended to improve upon the low-energy threshold (below 0.5 keV) of p-type point contact germanium gamma-ray spectrometers. Ultra-low energy thresholds are important in the detection of low-energy nuclear recoils, an event class relevant to both dark matter direct detection and measurement of coherent neutrino-nucleus scattering. The cryostat design, including a thermal and electrical-field model, is given. A prototype cryostat has been assembled and data acquired to evaluate its vacuum and thermal performance.

  7. Point defect engineering strategies to retard phosphorous diffusion in germanium

    KAUST Repository

    Tahini, H. A.

    2013-01-01

    The diffusion of phosphorous in germanium is very fast, requiring point defect engineering strategies to retard it in support of technological application. Density functional theory corroborated with hybrid density functional calculations are used to investigate the influence of the isovalent codopants tin and hafnium in the migration of phosphorous via the vacancy-mediated diffusion process. The migration energy barriers for phosphorous are increased significantly in the presence of oversized isovalent codopants. Therefore, it is proposed that tin and in particular hafnium codoping are efficient point defect engineering strategies to retard phosphorous migration. © the Owner Societies 2013.

  8. Recycling effect of germanium on ECR ion source

    OpenAIRE

    Leherissier, P.; Barué, C.; Canet, C; Dubois, M.; Dupuis, M.; Flambard, J.L.; Gaubert, G.; Jardin, P.; Lecesne, N.; Lemagnen, F.; R. LEROY; Pacquet, J.Y.

    2003-01-01

    After running for three weeks with a 76Ge beam provided by the ECR-4 ion source at GANILwe have investigated the recycling effect of an SF6 plasma. The initial beam was produced bythe classical method, using germanium dioxide in our micro-oven and helium as support gas.The overall ionization efficiency was measured and found to be around 3%. Without theoven, and using SF6 instead of helium, the ECR-4 ion source has been able to produce a verystable beam during a two-week period. The intensity...

  9. Band Anticrossing in Dilute Germanium Carbides Using Hybrid Functionals

    CERN Document Server

    Stephenson, Chad A; Qi, Meng; Penninger, Michael; Schneider, William; Wistey, Mark A

    2014-01-01

    Dilute germanium carbides (Ge1-xCx) offer a direct bandgap for compact silicon photonics, but widely varying results have been reported. This work uses ab initio simulations with HSE06 hybrid functionals and spin-orbit coupling to study the band structure behavior in the absence of defects. Contrary to Vegard's law, the conduction band minimum at k=0 is consistently found to decrease with increasing C content, while L and X valleys remain nearly unchanged. A vanishing bandgap was observed for all alloys with x>0.017. Conduction bands deviate from a constant-potential band anticrossing model except near the center of the Brillouin zone.

  10. Neutronenaktivierung von Germanium : Sensitivitätsstudie und Wirkungsquerschnittsmessung

    OpenAIRE

    Lier, Alisa

    2013-01-01

    Mithilfe einer (n,γ)-Aktivierung von Germanium am Forschungsreaktor TRIGA in Mainz wurde zum einen in Hinblick auf zukünftige Experiment an der NIF eine Sensitivitätsstudie durchgeführt. Zum anderen wurden die thermischen Neutroneneinfangquerschnitte von 74Ge und 76Ge jeweils für den Einfang in den Isomer- und Grundzustand gemessen, um die Abweichungen der Daten von [Hol93] und [Mug06] zu klären. Zusätzlich wurden die Halbwertszeiten der betrachteten radioaktiven Ge-Isotope bestimmt.

  11. GERDA: a germanium detector array to search for neutrinoless double beta decay

    International Nuclear Information System (INIS)

    The GERDA, a new experiment to search for the double beta decay of 76Ge, is being installed at Laboratori Nazionali del Gran Sasso. The potentialities of this experiment as well the status of the project are reviewed

  12. Search for neutrinoless double beta decay of Ge-76 with the GERmanium Detector Array '' GERDA ''

    International Nuclear Information System (INIS)

    The study of neutrinoless double beta decay (DBD) is the most powerful approach to the fundamental question if the neutrino is a Majorana particle, i.e. its own anti-particle. The observation of neutrinoless DBD would not only establish the Majorana nature of the neutrino but also represent a determination of its effective mass if the nuclear matrix element is given. So far, the most sensitive results have been obtained with Ge-76, and the group of Klapdor-Kleingrothaus has made a claim of discovery. Future experiments have to reduce radioactive backgrounds to increase the sensitivity. '' GERDA '' is a new double beta-decay experiment which is currently under construction in the INFN Gran Sasso National Laboratory, Italy. It is implementing a new shielding concept by operating bare Ge diodes - enriched in Ge-76 - in high purity liquid argon supplemented by a water shield. The aim of '' GERDA '' is to verify or refute the recent claim of discovery, and, in a second phase, to achieve a two orders of magnitude lower background index than recent experiments, increasing the sensitive mass and reaching exposure of 100 kg yr. It be will discuss design, physics reach, and status of construction of '' GERDA '', and present results from various R efforts including long term stability of bare Ge diodes in cryogenic liquids, material screening, cryostat performance, detector segmentation, cryogenic precision electronics, safety aspects, and Monte Carlo simulations. (author)

  13. Search for Neutrinoless Double Beta Decay of 76Ge with the GERmanium Detector Array "gerda"

    Science.gov (United States)

    Garfagnini, Alberto

    2011-10-01

    The study of neutrinoless double beta decay (DBD) is the only presently known approach to the fundamental question if the neutrino is a Majorana particle, i.e. its own anti-particle. The observation of neutrinoless DBD would not only establish the Majorana nature of the neutrino but also represent a determination of its effective mass if the nuclear matrix element is given. So far, the most sensitive results have been obtained with 76Ge, and the group of Klapdor-Kleingrothaus has made a claim of discovery. Future experiments have to reduce radioactive backgrounds to increase the sensitivity. GERDA is a new DBD experiment which is currently under construction in the INFN Gran Sasso National Laboratory, Italy. It is implementing a new shielding concept by operating bare Ge diodes - enriched in 76Ge - in high purity liquid argon supplemented by a water shield. The aim of GERDA is to scrutinize the recent claim of discovery, and, in a second phase, to achieve a two orders of magnitude lower background index than recent experiments, increasing the sensitive mass and reaching an exposure of 100 kg yr. The paper will discuss design, physics reach, and status of construction of GERDA.

  14. Reduction of phosphorus diffusion in germanium by fluorine implantation

    Science.gov (United States)

    El Mubarek, H. A. W.

    2013-12-01

    The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of FnVm clusters in the F-amorphized Ge layer. A fraction of these FnVm clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.

  15. Reduction of phosphorus diffusion in germanium by fluorine implantation

    Energy Technology Data Exchange (ETDEWEB)

    El Mubarek, H. A. W. [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2013-12-14

    The control of phosphorus (P) diffusion in germanium (Ge) is essential for the realisation of ultrashallow n-type junctions in Ge. This work reports a detailed study of the effect of fluorine (F) co-implantation on P diffusion in Ge. P and F profiles were characterized by secondary ion mass spectroscopy. The ion implantation damage was investigated using cross sectional transmission electron microscopy. It is shown that F co-implantation reduces the implanted P profile width and reduces both intrinsic and extrinsic P diffusion in Ge. A defect mediated mechanism for the strong influence of F co-implantation on P diffusion in Ge is proposed and invokes the formation of F{sub n}V{sub m} clusters in the F-amorphized Ge layer. A fraction of these F{sub n}V{sub m} clusters decorate the interstitial type end-of-range defects in the re-grown Ge layer and the rest react during re-growth with interstitial germanium atoms diffusing back from the amorphous crystalline interface. The Ge vacancies are then annihilated and mobile interstitial F is released and out diffuses from the surface. This results in a re-grown Ge layer which has a low vacancy concentration and in which the P diffusion rate is reduced. These results open the way to the realization of enhanced Ge n-type devices.

  16. Germanium-76 Isotope Separation by Cryogenic Distillation. Final Report

    International Nuclear Information System (INIS)

    The current separation method for Germanium isotopes is electromagnetic separation using Calutrons. The Calutrons have the disadvantage of having a low separation capacity and a high energy cost to achieve the separation. Our proposed new distillation method has the advantage that larger quantities of Germanium isotopes can be separated at a significantly lower cost and in a much shorter time. After nine months of operating the column that is 1.5 meter in length, no significant separation of the isotopes has been measured. We conclude that the length of the column we have been using is too short. In addition, other packing material than the 0.16 inch Propak, 316 ss Protruded metal packing that we used in the column, should be evaluated which may have a better separation factor than the 0.16 inch Propak, 316 ss Protruded metal packing that has been used. We conclude that a much longer column - a minimum of 50 feet length - should be built and additional column packing should be tested to verify that isotopic separation can be achieved by cryogenic distillation. Even a longer column than 50 feet would be desirable.

  17. Silicon-germanium Single-heterojunction Bipolar Transistor

    Directory of Open Access Journals (Sweden)

    G.M. Khanduri

    2006-04-01

    Full Text Available The cutoff frequency performance of an NPN Si/SiGe/SiGe single-heterojunction bipolartransistor (SiGe SHBT at high collector current densities has been analysed using a 2-D MEDICIdevice simulator. A conventional NPN Si/SiGe/Si double-heterojunction bipolar transistor(SiGe DHBT having uniform 20 atomic per cent of germanium in the base region has beeninvestigated for comparison. The analysis shows the formation of a retarding potential barrierfor minority carrier electrons at the base-collector heterojunction of the DHBT structure. Whereas,the base-collector homojunction of the SiGe SHBT structure, having a uniform 15 atomic percent of germanium profile in its base and collector, inhibits the formation of such a retardingpotential barrier, the SHBT structure with a base-collector homojunction shows an improvedcutoff frequency at high collector current density in comparison with conventional SiGe DHBT,which makes it more promising for high speed, scaled down, field-specific applications.

  18. Evaluating a new segmented germanium detector contact technology

    Science.gov (United States)

    Jackson, E. G.; Lister, C. J.; Chowdhury, P.; Hull, E.; Pehl, R.

    2012-10-01

    New technologies for making gamma ray detectors position sensitive have many applications in space science, medical imaging, homeland security, and in nuclear structure research. One promising approach uses high-purity germanium wafers with the planar surfaces segmented into orthogonal strip patterns forming a Double-Sided Strip Detector (DSSD). The combination of data from adjoining strips, or pixels, is physics-rich for Compton image formation and polarization studies. However, sensitivity to charge loss and various kinds of cross-talk [1] have limited the usefulness of first generation devices. We are investigating new contact technologies, developed by PhDs Co [2], based on amorphous-germanium and yttrium contacts RF sputter deposited to a thickness of ˜ 1000 å. New techniques allow both physical and photolithographic segmentation of the contacts with inter-strip gap widths of 0.25 mm. These modifications should improve all aspects of charge collection. The new detector technology employs the same material and fabrication technique for both the n- and p- contacts, thus removing artificial asymmetry in the data. Results from tests of cross-talk, charge collection, and scattering asymmetry will be presented and compared with older technologies. This mechanically cooled counter, NP-7, seems to represent a breakthrough.[4pt] [1] S. Gros et al., Nucl. Inst. Meth. A 602, 467 (2009).[0pt] [2] E. Hull et al Nucl Inst Meth A 626, 39 (2011)

  19. Structural and electronic properties of hybrid silicon-germanium nanosheets

    Directory of Open Access Journals (Sweden)

    F. L. Pérez Sánchez

    2014-12-01

    Full Text Available Using first principles molecular calculations, based on the Density Functional Theory (DFT, structural and electronic properties of hybrid graphene—like silicon—germanium circular nanosheets of hexagonal symmetry are investigated. The exchange—correlation functional of Perdew—Wang (PW in the local spin density approximation (LSDA based on the pseudopotentials of Dolg—Bergnre is applied. The finite extension nanosheets are represented by the CnHm—like cluster model with mono—hydrogenated armchair edges. Changes of the physicochemical properties were analyzed to learn on the chemical composition. We have obtained that the corrugation of the hybrid nanosheets is maintained (with respect to the pristine nanosheets of Ge and Si and is more pronounced when there is a high percentage of germanium. Moreover, hybrid nanosheets have ionic bonds (polarity in the interval from 0.18 to 0.77 D and exhibit a semimetal behavior. Three types of chemical compositions are considered: 1 the one—one relationship, 2 formation of Ge dimers and 3 formation of Ge hexagons. In each case it is observed an increase in the chemical reactivity. Finally, analyzing the work function we conclude that in cases 1 and 2 the chemical compositions improve the efficiency of the field emission and thereby they could expand the scope of nanotechnology applications.

  20. Germanium ion implantation to Improve Crystallinity during Solid Phase Epitaxy and the effect of AMU Contamination

    Science.gov (United States)

    Lee, K. S.; Yoo, D. H.; Son, G. H.; Lee, C. H.; Noh, J. H.; Han, J. J.; Yu, Y. S.; Hyung, Y. W.; Yang, J. K.; Song, D. G.; Lim, T. J.; Kim, Y. K.; Lee, S. C.; Lee, H. D.; Moon, J. T.

    2006-11-01

    Germanium ion implantation was investigated for crystallinity enhancement during solid phase epitaxial regrowth (SPE) using high current implantation equipment. Electron back-scatter diffraction(EBSD) measurement showed numerical increase of 19 percent of signal, which might be due to pre-amorphization effect on silicon layer deposited by LPCVD process with germanium ion implantation. On the other hand, electrical property such as off-leakage current of NMOS transistor degraded in specific regions of wafers, which implied non-uniform distribution of donor-type impurities into channel area. It was confirmed that arsenic atoms were incorporated into silicon layer during germanium ion implantation. Since the equipment for germanium pre-amorphization implantation(PAI) was using several source gases such as BF3 and AsH3, atomic mass unit(AMU) contamination during PAI of germanium with AMU 74 caused the incorporation of arsenic with AMU 75 which resided in arc-chamber and other parts of the equipment. It was effective to use germanium isotope of AMU 72 to suppress AMU contamination, however it led serious reduction of productivity because of decrease in beam current by 30 percent as known to be difference in isotope abundance. It was effective to use enriched germanium source gas with AMU 72 in order to improve productivity. Spatial distribution of arsenic impurities in wafers was closely related to hardware configuration of ion implantation equipment.

  1. Discrimination of nuclear and electronic recoil events using plasma effect in germanium detectors

    CERN Document Server

    Wei, W -Z; Mei, D -M

    2016-01-01

    We report a new method of using the plasma time difference, which results from the plasma effect, between the nuclear and electronic recoil events in high-purity germanium detectors to distinguish these two types of events in the search for rare physics processes. The physics mechanism of the plasma effect is discussed in detail. A numerical model is developed to calculate the plasma time for nuclear and electronic recoils at various energies in germanium detectors. It can be shown that under certain conditions the plasma time difference is large enough to be observable. The experimental aspects in realizing such a discrimination in germanium detectors is discussed.

  2. The development of novel analytical methods for the determination of germanium in foodstuffs

    OpenAIRE

    McMahon, Michael

    2006-01-01

    This work represents the development of novel methods of analysis for a wide range of metals, in particular germanium. This research has identified a range of foodstuffs and supplements containing low level concentrations o f germanium. In total germanium was quantified in 28 samples including vegetables such as beetroot (3 23/g)> garlic (2 78^ig/g) and potato (1 85|ng/g) and tablet formulations such as aloe vera tablet (20 83 jug/g), ginger tablet (9 96^g/g) and ginseng tablet (5 48|j.g/g). ...

  3. Analysis of Silicon Germanium Standards for the Quantification of SiGe Microelectronic Devices using AES

    OpenAIRE

    Watts, JF; Mallinson, CF; Littlejohns, CG; Gardes, FY; Castle, JE

    2015-01-01

    Four samples of well-defined silicon-germanium alloys were used as standards for calibration purposes to allow accurate quantification of silicon-germanium-on-insulator (SGOI) microelectronic devices using Auger electron spectroscopy. Narrow Si KLL and the Ge LMM, high resolution Si KL_2,3L_2,3 and Ge L_3M_4,5M_4,5 together with survey spectra were collected and are presented from each sample. A matrix effect was observed for silicon in germanium and calculated as 0.85 and 0.95 for the Ge77.5...

  4. Phosphorus diffusion in germanium following implantation and excimer laser annealing

    Science.gov (United States)

    Wang, Chen; Li, Cheng; Huang, Shihao; Lu, Weifang; Yan, Guangming; Zhang, Maotian; Wu, Huanda; Lin, Guangyang; Wei, Jiangbin; Huang, Wei; Lai, Hongkai; Chen, Songyan

    2014-05-01

    We focus our study on phosphorus diffusion in ion-implanted germanium after excimer laser annealing (ELA). An analytical model of laser annealing process is developed to predict the temperature profile and the melted depth in Ge. Based on the heat calculation of ELA, a phosphorus diffusion model has been proposed to predict the dopant profiles in Ge after ELA and fit SIMS profiles perfectly. A comparison between the current-voltage characteristics of Ge n+/p junctions formed by ELA at 250 mJ/cm2 and rapid thermal annealing at 650 °C for 15 s has been made, suggesting that ELA is promising for high performance Ge n+/p junctions.

  5. Oxygen-related point defects in silicon and germanium

    CERN Document Server

    Coutinho, J P A

    2001-01-01

    A modelling study of several oxygen related defects in silicon and germanium crystals is reported. These include radiation and thermally activated defects. The problem of thermal donor formation is revised in detail. Here we report the properties of the simple interstitial oxygen complexes, their diffusivity and clustering properties, culminating with a novel model for the thermal double donor defects (TDD). The model is also extended to the hydrogen-related shallow thermal donor family, STD(H). According to the model, electrons from over-coordinated oxygen atoms with a donor level lying above that of a stress-induced state, are transfered to the later. This picture is analogous to that of an externally doped quantum-dot.

  6. Characteristics of GRIFFIN high-purity germanium clover detectors

    Science.gov (United States)

    Rizwan, U.; Garnsworthy, A. B.; Andreoiu, C.; Ball, G. C.; Chester, A.; Domingo, T.; Dunlop, R.; Hackman, G.; Rand, E. T.; Smith, J. K.; Starosta, K.; Svensson, C. E.; Voss, P.; Williams, J.

    2016-06-01

    The Gamma-Ray Infrastructure For Fundamental Investigations of Nuclei, GRIFFIN, is a new experimental facility for radioactive decay studies at the TRIUMF-ISAC laboratory. The performance of the 16 high-purity germanium (HPGe) clover detectors that will make up the GRIFFIN spectrometer is reported. The energy resolution, efficiency, timing resolution, crosstalk and preamplifier properties of each crystal were measured using a combination of analog and digital data acquisition techniques. The absolute efficiency and add-back factors are determined for the energy range of 80-3450 keV. The detectors show excellent performance with an average over all 64 crystals of a FWHM energy resolution of 1.89(6) keV and relative efficiency with respect to a 3 in . × 3 in . NaI detector of 41(1)% at 1.3 MeV.

  7. Anomalous compression behavior of germanium during phase transformation

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xiaozhi [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Tan, Dayong [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Guangzhou Institute of Geochemistry, Chinese Academic of Sciences, Guangzhou 510640 (China); Ren, Xiangting [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); Yang, Wenge, E-mail: yangwg@hpstar.ac.cn, E-mail: duanweihe@scu.edu.cn [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439 (United States); He, Duanwei, E-mail: yangwg@hpstar.ac.cn, E-mail: duanweihe@scu.edu.cn [Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China); Institute of Fluid Physics and National Key Laboratory of Shockwave and Detonation Physic, China Academy of Engineering Physics, Mianyang 621900 (China); Mao, Ho-Kwang [Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203 (China); High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439 (United States); Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015 (United States)

    2015-04-27

    In this article, we present the abnormal compression and plastic behavior of germanium during the pressure-induced cubic diamond to β-tin structure transition. Between 8.6 GPa and 13.8 GPa, in which pressure range both phases are co-existing, first softening and followed by hardening for both phases were observed via synchrotron x-ray diffraction and Raman spectroscopy. These unusual behaviors can be interpreted as the volume misfit between different phases. Following Eshelby, the strain energy density reaches the maximum in the middle of the transition zone, where the switch happens from softening to hardening. Insight into these mechanical properties during phase transformation is relevant for the understanding of plasticity and compressibility of crystal materials when different phases coexist during a phase transition.

  8. Young’s modulus of [111] germanium nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Maksud, M.; Palapati, N. K. R.; Subramanian, A., E-mail: asubramanian@vcu.edu [Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Yoo, J. [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Harris, C. T. [Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2015-11-01

    This paper reports a diameter-independent Young’s modulus of 91.9 ± 8.2 GPa for [111] Germanium nanowires (Ge NWs). When the surface oxide layer is accounted for using a core-shell NW approximation, the YM of the Ge core approaches a near theoretical value of 147.6 ± 23.4 GPa. The ultimate strength of a NW device was measured at 10.9 GPa, which represents a very high experimental-to-theoretical strength ratio of ∼75%. With increasing interest in this material system as a high-capacity lithium-ion battery anode, the presented data provide inputs that are essential in predicting its lithiation-induced stress fields and fracture behavior.

  9. Young’s modulus of [111] germanium nanowires

    Directory of Open Access Journals (Sweden)

    M. Maksud

    2015-11-01

    Full Text Available This paper reports a diameter-independent Young’s modulus of 91.9 ± 8.2 GPa for [111] Germanium nanowires (Ge NWs. When the surface oxide layer is accounted for using a core-shell NW approximation, the YM of the Ge core approaches a near theoretical value of 147.6 ± 23.4 GPa. The ultimate strength of a NW device was measured at 10.9 GPa, which represents a very high experimental-to-theoretical strength ratio of ∼75%. With increasing interest in this material system as a high-capacity lithium-ion battery anode, the presented data provide inputs that are essential in predicting its lithiation-induced stress fields and fracture behavior.

  10. Optimization of the geometry of broad energy germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Salathe, Marco [Max Planck Institut fuer Kernphysik, Saupfercheckweg 1, 69117 Heidelberg (Germany)

    2015-07-01

    Broad energy germanium (BEGe) detectors are employed in many different scientific experiments and widely used in industrial applications. A circular contact is implanted on a base of the cylindrical shaped detector. This circular contact is used as a read out electrode and is surrounded by a passivated groove that separates it from the high voltage electrode, which spans over the remaining surface. The size of the read out electrode and the groove geometry are assumed to have a major impact onto the energy resolution, pulse shape discrimination and energy threshold. To quantify the impact of the detectors geometry on its performance, the read out contacts size of two BEGe detectors was modified several times. The geometry of the detector was optimized prior to each reprocessing step through the use of simulations. For each configuration, the detectors performance was analysed through distinct measurements. Some general consideration about analysis tools, simulation libraries and first results of this study are presented in this talk.

  11. Tunable split-ring resonators using germanium telluride

    Science.gov (United States)

    Kodama, C. H.; Coutu, R. A.

    2016-06-01

    We demonstrate terahertz (THz) split-ring resonator (SRR) designs with incorporated germanium telluride (GeTe) thin films. GeTe is a chalcogenide that undergoes a nonvolatile phase change from the amorphous to crystalline state at approximately 200 °C, depending on the film thickness and stoichiometry. The phase change also causes a drop in the material's resistivity by six orders of magnitude. In this study, two GeTe-incorporated SRR designs were investigated. The first was an SRR made entirely out of GeTe and the second was a gold SRR structure with a GeTe film incorporated into the gap region of the split ring. These devices were characterized using THz time-domain spectroscopy and were heated in-situ to determine the change in the design operation with varying temperatures.

  12. Wide band polarizer with suspended germanium resonant grating

    Institute of Scientific and Technical Information of China (English)

    Wugang Cao; Jianyong Ma; Changhe Zhou

    2012-01-01

    An ultra broad band polarizer that operates in the telecommunication wavelength band is proposed.This device,which consists of a single suspended germanium resonant grating layer,is designed using the inverse mathematical method and the rigorous vector diffraction theory.Calculated results indicate that the ultra broad band polarizer exhibits extremely high reflection (R > 99%) for TE polarization light and high transmission (T > 99%) for TM polarization at the wavelength range greater than 300 nm,and it has an extinction ratio of approximately 1 000 at the 1 550-nm central wavelength.The results of the rigorous coupled wave analysis indicate that the extremely wide band property of the TE polarization is caused by the excitation of strong modulation guided modes in the design wavelength range.

  13. Submicron fabrication by local anodic oxidation of germanium thin films

    Science.gov (United States)

    Oliveira, A. B.; Medeiros-Ribeiro, G.; Azevedo, A.

    2009-08-01

    Here we describe a lithography scheme based on the local anodic oxidation of germanium film by a scanning atomic force microscope in a humidity-controlled atmosphere. The oxidation kinetics of the Ge film were investigated by a tapping mode, in which a pulsed bias voltage was synchronized and applied with the resonance frequency of the cantilever, and by a contact mode, in which a continuous voltage was applied. In the tapping mode we clearly identified two regimes of oxidation as a function of the applied voltage: the trench width increased linearly during the vertical growth and increased exponentially during the lateral growth. Both regimes of growth were interpreted taking into consideration the Cabrera-Mott mechanism of oxidation applied to the oxide/Ge interface. We also show the feasibility of the bottom-up fabrication process presented in this work by showing a Cu nanowire fabricated on top of a silicon substrate.

  14. Core and valence thermal vibrations in diamond, silicon, and germanium

    Energy Technology Data Exchange (ETDEWEB)

    Saravanan, R. (School of Physics, Madurai Kamaraj Univ. (India)); Balamurugan, P. (School of Physics, Madurai Kamaraj Univ. (India)); Mohanlal, S.K. (School of Physics, Madurai Kamaraj Univ. (India))

    1994-08-01

    An analysis is made using published X-ray data, for the thermal vibrations in diamond, silicon, and germanium. The overall thermal vibration is split into core and valence contributions, because valence electrons can oscillate with different phase and amplitude than core electrons due to bond polarizability. Using indigenously developed computer programs the published data are analyzed. In the first phase, the overall Debye-Waller factor of diamond, Si, and Ge together with scaling and extinction factors are refined using the method of least squares. In the second phase, the core and valence contributions of the harmonic temperature factor are evaluated. Finally, in the third phase, the core and valence contributions of the anharmonic temperature factor are evaluated. The error in the fitting procedure is less than 1% for Si and Ge and about 3% for diamond. (orig.)

  15. Towards monolithic integration of germanium light sources on silicon chips

    Science.gov (United States)

    Saito, Shinichi; Zaher Al-Attili, Abdelrahman; Oda, Katsuya; Ishikawa, Yasuhiko

    2016-04-01

    Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently. However, the direct band gap energy is close to the indirect one, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip. In this article, we will review the engineering challenges of developing Ge light sources fabricated using nano-fabrication technologies compatible with complementary metal-oxide-semiconductor processes. In particular, we review recent progress in applying high-tensile strain to Ge to reduce the direct band gap. Another important technique is doping Ge with donor impurities to fill the indirect band gap valleys in the conduction band. Realization of carrier confinement structures and suitable optical cavities will be discussed. Finally, we will discuss possible applications of Ge light sources in potential photonics-electronics convergent systems.

  16. Band Anticrossing in Dilute Germanium Carbides Using Hybrid Density Functionals

    Science.gov (United States)

    Stephenson, Chad A.; O'brien, William A.; Qi, Meng; Penninger, Michael; Schneider, William F.; Wistey, Mark A.

    2016-04-01

    Dilute germanium carbides (Ge1- x C x ) offer a direct bandgap for compact silicon photonics, but widely varying properties have been reported. This work reports improved band structure calculations for Ge1- x C x using ab initio simulations that employ the HSE06 exchange-correlation density functional. Contrary to Vegard's law, the conduction band minimum at Γ is consistently found to decrease with increasing C content, while L and X valleys change much more slowly. The calculated Ge bandgap is within 11% of experimental values. A decrease in energy at the Γ conduction band valley of (170 meV ± 50)/%C is predicted, leading to a direct bandgap for x > 0.008. These results indicate a promising material for Group IV lasers.

  17. Research progress of Si-based germanium materials and devices

    Science.gov (United States)

    Buwen, Cheng; Cheng, Li; Zhi, Liu; Chunlai, Xue

    2016-08-01

    Si-based germanium is considered to be a promising platform for the integration of electronic and photonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as: (1) the nature of indirect band gap of Ge; (2) the epitaxy of dislocation-free Ge layers on Si substrate; and (3) the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on-insulator (GOI) materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n+p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits. Project supported in part by the National Natural Science Foundation (Nos. 61036003, 61435013) and the Major State Basic Research Development Program of China (No. 2013CB632103).

  18. Radiation-electromagnetic effect in germanium single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kikoin, I.K.; Kikoin, L.I.; Lazarev, S.D.

    1980-10-01

    An experimental study was made of the radiation-electromagnetic effect in germanium single crystals when excess carriers were generated by bombardment with ..cap alpha.. particles, protons, or x rays in magnetic fields up to 8 kOe. The source of ..cap alpha.. particles and protons was a cyclotron and x rays were provided by a tube with a copper anode. The radiation-electromagnetic emf increased linearly on increase in the magnetic field and was directly proportional to the flux of charged particles at low values of the flux, reaching saturation at high values of the flux (approx.5 x 10/sup 11/ particles .cm/sup -2/ .sec/sup -1/). In the energy range 4--40 MeV the emf was practically independent of the ..cap alpha..-particle energy. The sign of the emf was reversed when samples with a ground front surface were irradiated. Measurements of the photoelectromagnetic and Hall effects in the ..cap alpha..-particle-irradiated samples showed that a p-n junction was produced by these particles and its presence should be allowed for in investigations of the radiation-electromagnetic effect. The measured even radiation-electromagnetic emf increased quadratically on increase in the magnetic field. An investigation was made of the barrier radiation-voltaic effect (when the emf was measured between the irradiated and unirradiated surfaces). Special masks were used to produce a set of consecutive p-n junctions in germanium crystals irradiated with ..cap alpha.. particles. A study of the photovoltaic and photoelectromagnetic effects in such samples showed that the method could be used to increase the efficiency of devices utilizing the photoelectromagnetic effect.

  19. Sensitivity comparison of intrinsic germanium detectors with various efficiencies

    International Nuclear Information System (INIS)

    Scientists today are being asked to measure concentrations of radionuclides at increasingly lower levels. This creates a demand for better resolution detectors with larger efficiencies that can provide the necessary sensitivity to accurately determine low levels of radioactivity. This study has acquired a large volume of empirical data for a wide range of relative efficiency germanium detectors. The purpose was to determine the sensitivity of various efficiency high-purity (P-type) germanium detectors produced by a single manufacturer. Selecting efficiency as the only variable and essentially all other variables remaining constant narrowed the field of detectors to 30. This investigation compares the response for the lower limit of detection (LLD), figure-of-merit (FOM), and minimum detectable activity (MDA) versus efficiency. In addition to the efficiency, the resolution, background, peak-to-Compton (P/C), and crystal shape of a p-type detector are of particular importance when considering the parameters of a detectors performance. A concise summary of the results is that the detector of choice for low energy measurements would be a 25% detector with resolution better than 1.8 keV FWHM for the 1.332 keV energy of Co-60. The detector of choice for energy levels greater than 500 keV would be a high efficiency low background detector. If the entire energy range is of interest, then a 70% low background detector with a high P/C and a resolution better than 1.9 keV would yield the lowest MDA and assure the most efficient counting times. 9 refs., 25 figs., 6 tabs

  20. Contribution of a germanium detector in mobile gamma-ray spectrometry. Spectral analysis and performance

    CERN Document Server

    Gutierrez, S; Bourgeois, C

    2002-01-01

    The sensitivity of the germanium semi-conductor detector is 30 times lower than that of the sodium iodide (NaI) detectors frequently used in airborne spectrometry. Its energy resolution however, is 20 times better, giving more accurate identification of radionuclides, especially when complex spectra are involved. The use of the germanium detector in mobile gamma-ray spectrometry provides a large amount of qualitative and quantitative information. In post-accident situations a germanium detector will be sufficient, and should therefore be used in preference to a NaI detector. An algorithm for detecting the total absorption peaks by studying the variations in the spectral profile of germanium gamma-ray spectra has been developed at the CEA. The use of digital filters that take into account the characteristics of the absorption peaks reduces the statistical fluctuations, making possible detection based on the analysis of the first and second derivatives. The absorption peak is then estimated by subtracting the b...

  1. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

    KAUST Repository

    Hussain, Aftab M.

    2013-08-16

    We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to fabricate a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1- fabricate a suitably-doped active layer...

  3. An Implant-Passivated Blocked Impurity Band Germanium Detector for the Far Infrared Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to investigate the feasibility of fabricating a germanium blocked-impurity-band (BIB) detector using a novel process which will enable us to: 1-...

  4. Methods and software for predicting germanium detector absolute full-energy peak efficiencies

    International Nuclear Information System (INIS)

    High-purity germanium (HPGe) and lithium drifted germanium (Ge(Li)) detectors have been the detector of choice for high resolution gamma-ray spectroscopy for many years. This is primarily due to the superior energy resolution that germanium detectors present over other gamma-ray detectors. In order to perform quantitative analyses with germanium detectors, such as activity determination or nuclide identification, one must know the absolute full-energy peak efficiency at the desired gamma-ray energy. Many different methods and computer codes have been developed throughout history in an effort to predict these efficiencies using minimal or no experimental observations. A review of these methods and the computer codes that utilize them is presented. (author)

  5. Electronic and magnetic properties of Fe and Mn doped two dimensional hexagonal germanium sheets

    Energy Technology Data Exchange (ETDEWEB)

    Soni, Himadri R., E-mail: himadri.soni@gmail.com; Jha, Prafulla K., E-mail: himadri.soni@gmail.com [Department of Physics, Maharaja Krishnakumarsinhji Bhavnagar University, Bhavnagar-364001 (India)

    2014-04-24

    Using first principles density functional theory calculations, the present paper reports systematic total energy calculations of the electronic properties such as density of states and magnetic moment of pristine and iron and manganese doped two dimensional hexagonal germanium sheets.

  6. Induced Radioactivity Measured in a Germanium Detector After a Long Duration Balloon Flight

    Science.gov (United States)

    Starr, R.; Evans, L. G.; Floyed, S. R.; Drake, D. M.; Feldman, W. C.; Squyres, S. W.; Rester, A. C.

    1997-01-01

    A 13-day long duration balloon flight carrying a germanium detector was flown from Williams Field, Antartica in December 1992. After recovery of the payload the activity induced in the detector was measured.

  7. Operation of a high purity germanium crystal in liquid argon as a Compton suppressed radiation spectrometer

    CERN Document Server

    Orrell, J L; Amsbaugh, J F; Doe, P J; Hossbach, T W; Orrell, John L.; Aalseth, Craig E.; Amsbaugh, John F.; Doe, Peter J.; Hossbach, Todd W.

    2007-01-01

    A high purity germanium crystal was operated in liquid argon as a Compton suppressed radiation spectrometer. Spectroscopic quality resolution of less than 1% of the full-width half maximum of full energy deposition peaks was demonstrated. The construction of the small apparatus used to obtain these results is reported. The design concept is to use the liquid argon bath to both cool the germanium crystal to operating temperatures and act as a scintillating veto. The scintillation light from the liquid argon can veto cosmic-rays, external primordial radiation, and gamma radiation that does not fully deposit within the germanium crystal. This technique was investigated for its potential impact on ultra-low background gamma-ray spectroscopy. This work is based on a concept initially developed for future germanium-based neutrinoless double-beta decay experiments.

  8. Tuning the Electro-optical Properties of Germanium Nanowires by Tensile Strain

    OpenAIRE

    Greil, J.; Lugstein, A.; Zeiner, C.; G STRASSER; Bertagnolli, E.

    2012-01-01

    In this Letter we present the electrical and electro-optical characterization of single crystalline germanium nanowires (NWs) under tensile strain conditions. The measurements were performed on vapor–liquid–solid (VLS) grown germanium (Ge) NWs, monolithically integrated into a micromechanical 3-point strain module. Uniaxial stress is applied along the ⟨111⟩ growth direction of individual, 100 nm thick Ge NWs while at the same time performing electrical and optical characterization at room tem...

  9. HEROICA: A fast screening facility for the characterization of germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Andreotti, Erica [Universität Tübingen, Auf der Morgenstelle 14, 72076 Tübingen (Germany); Collaboration: GERDA Collaboration

    2013-08-08

    In the course of 2012, a facility for the fast screening of germanium detectors called HEROICA (Hades Experimental Research Of Intrinsic Crystal Appliances) has been installed at the HADES underground laboratory in the premises of the Belgian Nuclear Research Centre SCK•CEN, in Mol (Belgium). The facility allows performing a complete characterization of the critical germanium detectors' operational parameters with a rate of about two detectors per week.

  10. Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Dong, E-mail: wang.dong.539@m.kyushu-u.ac.jp; Maekura, Takayuki; Kamezawa, Sho [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Yamamoto, Keisuke; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

    2015-02-16

    We demonstrated direct band gap (DBG) electroluminescence (EL) at room temperature from n-type bulk germanium (Ge) using a fin type asymmetric lateral metal/Ge/metal structure with TiN/Ge and HfGe/Ge contacts, which was fabricated using a low temperature (<400 °C) process. Small electron and hole barrier heights were obtained for TiN/Ge and HfGe/Ge contacts, respectively. DBG EL spectrum peaked at 1.55 μm was clearly observed even at a small current density of 2.2 μA/μm. Superlinear increase in EL intensity was also observed with increasing current density, due to superlinear increase in population of elections in direct conduction band. The efficiency of hole injection was also clarified.

  11. Optical properties of Germanium nanoparticles synthesized by pulsed laser ablation in acetone

    Directory of Open Access Journals (Sweden)

    Saikiran eVadavalli

    2014-10-01

    Full Text Available Germanium (Ge nanoparticles (NPs are synthesized by means of pulsed laser ablation of bulk germanium target immersed in acetone with ns laser pulses at different pulse energies. The fabricated NPs are characterized by employing different techniques such as UV-visible absorption spectroscopy, photoluminescence, micro-Raman spectroscopy, transmission electron microscopy (TEM and field emission scanning electron microscopy (FESEM. The mean size of the Ge NPs is found to vary from few nm to 40 nm with the increase in laser pulse energy. Shift in the position of the absorption spectra is observed and also the photoluminescence peak shift is observed due to quantum confinement effects. High resolution TEM combined with micro-Raman spectroscopy confirms the crystalline nature of the generated germanium nanoparticles. The formation of various sizes of germanium NPs at different laser pulse energies is evident from the asymmetry in the Raman spectra and the shift in its peak position towards the lower wavenumber side. The FESEM micrographs confirm the formation of germanium micro/nanostructures at the laser ablated position of the bulk germanium. In particular, the measured NP sizes from the micro-Raman phonon quantum confinement model are found in good agreement with TEM measurements of Ge NPs.

  12. The Primary and Secondary Production of Germanium: A Life-Cycle Assessment of Different Process Alternatives

    Science.gov (United States)

    Robertz, Benedicte; Verhelle, Jensen; Schurmans, Maarten

    2015-02-01

    Germanium is a semiconducting metalloid element used in optical fibers, catalysis, infrared optics, solar cells, and light-emitting diodes. The need for Ge in these markets is considered to increase by a steady ~1% on a yearly basis. Its economic importance, coupled with the identified supply risks, has led to the classification of germanium as a critical raw material within Europe. Since the early 1950s, Umicore Electro-Optic Materials has supplied germanium-based materials solutions to its markets around the world. Umicore extracts germanium from a wide range of refining and recycling feeds. The main objectives of this study were to quantify the potential environmental impacts of the production of germanium from production scraps from the photovoltaic industry and to compare them with the potential impacts of the primary production of germanium from coal. The data related to the secondary production are Umicore-specific data. Environmental impact scores have been calculated for the impact categories recommended by the International reference life cycle data system. The comparison of the primary and secondary production highlights the benefit linked to the recycling of metals.

  13. Performance of the Fully Digital FPGA-based Front-End Electronics for the GALILEO Array

    CERN Document Server

    Barrientos, D; Bazzacco, D; Bortolato, D; Cocconi, P; Gadea, A; González, V; Gulmini, M; Isocrate, R; Mengoni, D; Pullia, A; Recchia, F; Rosso, D; Sanchis, E; Toniolo, N; Ur, C A; Valiente-Dobón, J J

    2014-01-01

    In this work we present the architecture and results of a fully digital Front End Electronics (FEE) read out system developed for the GALILEO array. The FEE system, developed in collaboration with the Advanced Gamma Tracking Array (AGATA) collaboration, is composed of three main blocks: preamplifiers, digitizers and preprocessing electronics. The slow control system contains a custom Linux driver, a dynamic library and a server implementing network services. The digital processing of the data from the GALILEO germanium detectors has demonstrated the capability to achieve an energy resolution of 1.53 per mil at an energy of 1.33 MeV.

  14. HEROICA: an underground facility for the fast screening of germanium detectors

    Science.gov (United States)

    Andreotti, E.; Garfagnini, A.; Maneschg, W.; Barros, N.; Benato, G.; Brugnera, R.; Costa, F.; Falkenstein, R.; Guthikonda, K. K.; Hegai, A.; Hemmer, S.; Hult, M.; Jänner, K.; Kihm, T.; Lehnert, B.; Liao, H.; Lubashevskiy, A.; Lutter, G.; Marissens, G.; Modenese, L.; Pandola, L.; Reissfelder, M.; Sada, C.; Salathe, M.; Schmitt, C.; Schulz, O.; Schwingenheuer, B.; Turcato, M.; Ur, C.; von Sturm, K.; Wagner, V.; Westermann, J.

    2013-06-01

    HEROICA (Hades Experimental Research Of Intrinsic Crystal Appliances) is an infrastructure to characterize germanium detectors and has been designed and constructed at the HADES Underground Research Laboratory, located in Mol (Belgium). Thanks to the 223 m overburden of clay and sand, the muon flux is lowered by four orders of magnitude. This natural shield minimizes the exposure of radio-pure germanium material to cosmic radiation resulting in a significant suppression of cosmogenic activation in the germanium detectors. The project has been strongly motivated by a special production of germanium detectors for the GERDA experiment. GERDA, currently collecting data at the Laboratori Nazionali del Gran Sasso of INFN, is searching for the neutrinoless double beta decay of 76Ge. In the near future, GERDA will increase its mass and sensitivity by adding new Broad Energy Germanium (BEGe) detectors. The production of the BEGe detectors is done at Canberra in Olen (Belgium), located about 30 km from the underground test site. Therefore, HADES is used both for storage of the crystals over night, during diode production, and for the characterization measurements. A full quality control chain has been setup and tested on the first seven prototype detectors delivered by the manufacturer at the beginning of 2012. The screening capabilities demonstrate that the installed setup fulfills a fast and complete set of measurements on the diodes and it can be seen as a general test facility for the fast screening of high purity germanium detectors. The results are of major importance for a future massive production and characterization chain of germanium diodes foreseen for a possible next generation 1-tonne double beta decay experiment with 76Ge.

  15. Radioactive beam experiments with large gamma-ray detector arrays

    CERN Document Server

    Svensson, C E; Ball, G C; Finlay, P; Garrett, P E; Grinyer, G F; Hackman, G S; Osborne, C J; Sarazin, F; Scraggs, H C; Smith, M B; Waddington, J C

    2003-01-01

    High-resolution gamma-ray spectroscopy is one of the most powerful and versatile experimental techniques in low-energy nuclear physics research. With the continuing development of hyper-pure germanium (HPGe) detector technology, including multi-crystal detectors, contact segmentation, and digital signal processing techniques, large gamma-ray detector arrays will continue to play a major role in the experimental programs at existing and future radioactive ion beam facilities. This paper provides an overview of recent progress in, and future plans for, the development of large gamma-ray spectrometers at such facilities, including the recent commissioning of the 8 pi spectrometer at ISAC-I and the proposed TRIUMF-ISAC gamma-ray escape suppressed spectrometer array for the ISAC-II facility.

  16. Low background germanium planar detector for gamma-ray spectrometry

    International Nuclear Information System (INIS)

    A new ultra-low background planar germanium spectrometer has been developed. The planar geometry improves the sensitivity and energy resolution below 600 keV. The integral background counting rate in the Laboratoire Souterrain de Modane (4800 m water equivalent) in the energy range from 20 to 1500 keV for the planar Ge (mass=800 g) is 140 count/day. After 40 days of statistics, the background counting rates for all expected single lines are below 0.5 count/day with the exception of 210Pb(46-keV line) which was measured to be (1.76±0.25) count/day. Monte Carlo simulations have been performed to explain the origin of the remaining background and to calculate the detection efficiencies. Sensitivities around 1 mBq/kg are obtained within few days of statistics for 226Ra and 228Th. The main achievement is the high sensitivities for 210Pb (46-keV line) and 238U (234Th: 63 and 93 keV lines). For an aluminium sample (mass=1 kg) the limits obtained in 15 days are 210Pb238U<3mBq/kg.

  17. The impact of heavy Ga doping on superconductivity in germanium

    International Nuclear Information System (INIS)

    We report new experimental results on how superconductivity in gallium-doped germanium (Ge:Ga) is influenced by hole concentration and microstructure. Ion implantation and subsequent flash-lamp annealing at various temperatures have been utilized to prepare highly p-doped thin films consisting of nanocrystalline and epitaxially grown sublayers with Ga-peak concentrations of up to 8 at.%. Successive structural investigations were carried out by means of Rutherford-backscattering spectrometry in combination with ion channelling, secondary ion- mass spectrometry, and high-resolution cross-sectional transmission electron microscopy. Hole densities of 1.8·1020 to 5.3 · 1020 cm-3 (0.4 to 1.2 at.%) were estimated via Hall-effect measurements revealing that only a fraction of the incorporated gallium has been activated electrically to generate free charge carriers. The coincidence of a sufficiently high hole and Ga concentration is required for the formation of a superconducting condensate. Our data reflect a critical hole concentration of around 0.4 at.%. Higher concentrations lead to an increase of Tc from 0.24 to 0.43 K as characterized by electrical-transport measurements. A short mean-free path indicates superconductivity in the dirty limit. In addition, small critical-current densities of max. 20 kA/m2 point to a large impact of the microstructure.

  18. Radium needle used to calibrate germanium gamma-ray detector.

    Science.gov (United States)

    Kamboj, S; Lovett, D; Kahn, B; Walker, D

    1993-03-01

    A standard platinum-iridium needle that contains 374 MBq 226Ra was tested as a source for calibrating a portable germanium detector used with a gamma-ray spectrometer for environmental radioactivity measurements. The counting efficiencies of the 11 most intense gamma rays emitted by 226Ra and its short-lived radioactive progeny at energies between 186 and 2,448 keV were determined, at the full energy peaks, to construct a curve of counting efficiency vs. energy. The curve was compared to another curve between 43 and 1,596 keV obtained with a NIST mixed-radionuclide standard. It was also compared to the results of a Monte Carlo simulation. The 226Ra source results were consistent with the NIST standard between 248 and 1,596 keV. The Monte Carlo simulation gave a curve parallel to the curve for the combined radium and NIST standard data between 250 and 2,000 keV, but at higher efficiency.

  19. What is the thermal conductivity limit of silicon germanium alloys?

    Science.gov (United States)

    Lee, Yongjin; Pak, Alexander J; Hwang, Gyeong S

    2016-07-20

    The lowest possible thermal conductivity of silicon-germanium (SiGe) bulk alloys achievable through alloy scattering, or the so-called alloy limit, is important to identify for thermoelectric applications. However, this limit remains a subject of contention as both experimentally-reported and theoretically-predicted values tend to be widely scattered and inconclusive. In this work, we present a possible explanation for these discrepancies by demonstrating that the thermal conductivity can vary significantly depending on the degree of randomness in the spatial arrangement of the constituent atoms. Our study suggests that the available experimental data, obtained from alloy samples synthesized using ball-milling techniques, and previous first-principles calculations, restricted by small supercell sizes, may not have accessed the alloy limit. We find that low-frequency anharmonic phonon modes can persist unless the spatial distribution of Si and Ge atoms is completely random at the atomic scale, in which case the lowest possible thermal conductivity may be achieved. Our theoretical analysis predicts that the alloy limit of SiGe could be around 1-2 W m(-1) K(-1) with an optimal composition around 25 at% Ge, which is substantially lower than previously reported values from experiments and first-principles calculations. PMID:27398924

  20. Environmental Radioactivity: Gamma Ray Spectroscopy with Germanium detector

    Science.gov (United States)

    Vyas, Gargi; Beausang, Cornelius; Hughes, Richard; Tarlow, Thomas; Gell, Kristen; University of Richmond Physics Team

    2013-10-01

    A CF-1000BRL series portable Air Particle Sampler with filter paper as filter media was placed in one indoor and one outdoor location at 100 LPM flow rate on six dates under alternating rainy and warm weather conditions over the course of sixteen days in May 2013. The machine running times spanned between 6 to 69 hours. Each filter paper was then put in a germanium gamma ray detector, and the counts ranged from 93000 to 250000 seconds. The spectra obtained were analyzed by the CANBERRA Genie 2000 software, corrected using a background spectrum, and calibrated using a 20.27 kBq activity multi-nuclide source. We graphed the corrected counts (from detector analysis time)/second (from air sampler running time)/liter (from the air sampler's flow rate) of sharp, significantly big peaks corresponding to a nuclide in every sample against the sample number along with error bars. The graphs were then used to compare the samples and they showed a similar trend. The slight differences were usually due to the different running times of the air sampler. The graphs of about 22 nuclides were analyzed. We also tried to recognize the nuclei to which several gamma rays belonged that were displayed but not recognized by the Genie 2000 software.

  1. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  2. Bending-induced Symmetry Breaking of Lithiation in Germanium Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Meng; Yang, Hui; Perea, Daniel E.; Zhang, Jiguang; Zhang, Sulin; Wang, Chong M.

    2014-08-01

    From signal transduction of living cells to oxidation and corrosion of metals, mechanical stress intimately couples with chemical reactions, regulating these biological and physiochemical processes. The coupled effect is particularly evident in electrochemical lithiation/delithiation cycling of high-capacity electrodes, such as silicon (Si), where on one hand lithiation-generated stress mediates lithiation kinetics, and on the other electrochemical reaction rate regulates stress generation and mechanical failure of the electrodes. Here we report for the first time the evidence on the controlled lithiation in germanium nanowires (GeNWs) through external bending. Contrary to the symmetric core-shell lithiation in free-standing GeNWs, we show bending GeNWs breaks the lithiation symmetry, speeding up lithaition at the tensile side while slowing down at the compressive side of the GeNWs. The bending-induced symmetry breaking of lithiation in GeNWs is further corroborated by chemomechanical modeling. In the light of the coupled effect between lithiation kinetics and mechanical stress in the electrochemical cycling, our findings shed light on strain/stress engineering of durable high-rate electrodes and energy harvesting through mechanical motion.

  3. Bending-induced symmetry breaking of lithiation in germanium nanowires.

    Science.gov (United States)

    Gu, Meng; Yang, Hui; Perea, Daniel E; Zhang, Ji-Guang; Zhang, Sulin; Wang, Chong-Min

    2014-08-13

    From signal transduction of living cells to oxidation and corrosion of metals, mechanical stress intimately couples with chemical reactions, regulating these biological and physiochemical processes. The coupled effect is particularly evident in the electrochemical lithiation/delithiation cycling of high-capacity electrodes, such as silicon (Si), where on the one hand lithiation-generated stress mediates lithiation kinetics and on the other the electrochemical reaction rate regulates stress generation and mechanical failure of the electrodes. Here we report for the first time the evidence on the controlled lithiation in germanium nanowires (GeNWs) through external bending. Contrary to the symmetric core-shell lithiation in free-standing GeNWs, we show bending the GeNWs breaks the lithiation symmetry, speeding up lithaition at the tensile side while slowing down at the compressive side of the GeNWs. The bending-induced symmetry breaking of lithiation in GeNWs is further corroborated by chemomechanical modeling. In the light of the coupled effect between lithiation kinetics and mechanical stress in the electrochemical cycling, our findings shed light on strain/stress engineering of durable high-rate electrodes and energy harvesting through mechanical motion. PMID:25025296

  4. Spatial resolution attainable in germanium detectors by pulse shape analysis

    International Nuclear Information System (INIS)

    There are several applications for which it is desirable to calculate the locations and energies of individual gamma-ray interactions within a high purity germanium (HPGe) detector. These include gamma-ray imaging and Compton suppression. With a segmented detector this can be accomplished by analyzing the pulse shapes of the signals from the various segments. We examine the fundamental limits to the spatial resolution attainable with this approach. The primary source of error is the series noise of the field effect transistors (FETs) at the inputs of the charge amplifiers. We show how to calculate the noise spectral density at the output of the charge amplifiers due to an optimally selected FET. This calculation is based only on the detector capacitance and a noise constant for the FET technology. We show how to use this spectral density to calculate the uncertainties in parameters, such as interaction locations and energies, that are derived from pulse shape analysis using maximum likelihood estimation (MLE) applied to filtered and digitized recordings of the charge signals. Example calculations are given to illustrate our approach. Experimental results are given that demonstrate that one can construct complete systems, from detector through data analysis, that come near the theoretical limits

  5. Ion beam induced stress formation and relaxation in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, T., E-mail: Tobias.Steinbach@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Reupert, A.; Schmidt, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

    2013-07-15

    Ion irradiation of crystalline solids leads not only to defect formation and amorphization but also to mechanical stress. In the past, many investigations in various materials were performed focusing on the ion beam induced damage formation but only several experiments were done to investigate the ion beam induced stress evolution. Especially in microelectronic devices, mechanical stress leads to several unwanted effects like cracking and peeling of surface layers as well as changing physical properties and anomalous diffusion of dopants. To study the stress formation and relaxation process in semiconductors, crystalline and amorphous germanium samples were irradiated with 3 MeV iodine ions at different ion fluence rates. The irradiation induced stress evolution was measured in situ with a laser reflection technique as a function of ion fluence, whereas the damage formation was investigated by means of Rutherford backscattering spectrometry. The investigations show that mechanical stress builds up at low ion fluences as a direct consequence of ion beam induced point defect formation. However, further ion irradiation causes a stress relaxation which is attributed to the accumulation of point defects and therefore the creation of amorphous regions. A constant stress state is reached at high ion fluences if a homogeneous amorphous surface layer was formed and no further ion beam induced phase transition took place. Based on the results, we can conclude that the ion beam induced stress evolution seems to be mainly dominated by the creation and accumulation of irradiation induced structural modification.

  6. Determination of trace impurities in germanium dioxide by ICP-OES, ICP-MS and ETAAS after matrix volatilization: a long-run performance of the method.

    Science.gov (United States)

    Niemelä, Matti; Kola, Harri; Perämäki, Paavo

    2014-01-01

    High-purity germanium compounds (e.g. germanium dioxide) are used these days in several applications (e.g. germanium-based detectors, semiconductors, fiber-optic systems). Thus, reliable methods for the routine determination of trace element impurities from germanium compounds must be developed. In this study, inductively coupled plasma mass spectrometry, inductively coupled plasma optical emission spectrometry and/or electrothermal atomic-absorption spectrometry was used for the determination of fifteen impurity elements in germanium dioxide. Possible interference effects due to a germanium matrix were eliminated/minimized by a simple open-vessel volatilization of germanium tetra chloride before the determinations. The results, based on the data gathered over a period of one year, showed that the long-run performance of the method is good, and it can be used for routine analysis of impurity elements in high-purity germanium dioxide. PMID:25007932

  7. Integrated analysis and design optimization of germanium purification process using zone-refining technique

    Science.gov (United States)

    Wang, Sen; Fang, H. S.; Jin, Z. L.; Zhao, C. J.; Zheng, L. L.

    2014-12-01

    Germanium (Ge) is a preferred material in the fabrication of high-performance gamma radiation detector for spectroscopy in nuclear physics. To maintain an intrinsic region in which electrons and holes reach the contacts to produce a spectroscopic signal, germanium crystals are usually doped with lithium (Li) ions. Consequently, hyperpure germanium (HPGe) should be prepared before the doping process to eliminate the interference of unexpected impurities in the Li dopant. Zone-refining technique, widely used in purification of ultra-pure materials, is chosen as one of the purification steps during detector-grade germanium production. In the paper, numerical analysis has been conducted to analyze heat transfer, melt flow and impurity segregation during a multi-pass zone-refining process of germanium in a Cyberstar mirror furnace. By modifying the effective redistribution coefficients, axial segregations of various impurities are investigated. Marangoni convection is found dominant in the melt. It affects the purification process through modifying the boundary layer thickness. Impurity distributions along the ingot are obtained with different conditions, such as pass number, zone travel rate, initial impurity concentration, segregation coefficient, and hot-zone length. Based on the analysis, optimization of the purification process design is proposed.

  8. Techniques to distinguish between electron and photon induced events using segmented germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kroeninger, K.

    2007-06-05

    Two techniques to distinguish between electron and photon induced events in germanium detectors were studied: (1) anti-coincidence requirements between the segments of segmented germanium detectors and (2) the analysis of the time structure of the detector response. An 18-fold segmented germanium prototype detector for the GERDA neutrinoless double beta-decay experiment was characterized. The rejection of photon induced events was measured for the strongest lines in {sup 60}Co, {sup 152}Eu and {sup 228}Th. An accompanying Monte Carlo simulation was performed and the results were compared to data. An overall agreement with deviations of the order of 5-10% was obtained. The expected background index of the GERDA experiment was estimated. The sensitivity of the GERDA experiment was determined. Special statistical tools were developed to correctly treat the small number of events expected. The GERDA experiment uses a cryogenic liquid as the operational medium for the germanium detectors. It was shown that germanium detectors can be reliably operated through several cooling cycles. (orig.)

  9. A-centers and isovalent impurities in germanium: Density functional theory calculations

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Department of Materials, Imperial College London, London SW7 2BP (United Kingdom); Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom); Londos, C.A. [University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece); Bracht, H. [Institute of Materials Physics, University of Muenster, Wilhelm-Klemm-Strasse 10, D-48149 Muenster (Germany)

    2011-03-25

    In the present study density functional theory calculations have been used to calculate the binding energies of clusters formed between lattice vacancies, oxygen and isovalent atoms in germanium. In particular we concentrated on the prediction of binding energies of A-centers or oxygen interstitials that are at nearest and next nearest neighbor sites to isovalent impurities (carbon, silicon and tin) in germanium. The A-center is an oxygen interstitial atom near a lattice vacancy and is an important impurity-defect pair in germanium. In germanium doped with carbon or silicon, we calculated that most of the binding energy of the cluster formed between A-centers and the carbon or silicon atoms is due to the interaction between the oxygen interstitial atom and the carbon or silicon atoms. For tin-doped germanium most of the binding energy is due to the interaction of the oversized tin atom and the lattice vacancy, which essentially provide space for tin to relax. The nearest neighbor carbon-oxygen interstitial and the silicon-oxygen interstitial pairs are significantly bound, whereas the tin-oxygen interstitial pairs are not. The results are discussed in view of analogous investigations in isovalently doped silicon.

  10. Biallelic and Genome Wide Association Mapping of Germanium Tolerant Loci in Rice (Oryza sativa L..

    Directory of Open Access Journals (Sweden)

    Partha Talukdar

    Full Text Available Rice plants accumulate high concentrations of silicon. Silicon has been shown to be involved in plant growth, high yield, and mitigating biotic and abiotic stresses. However, it has been demonstrated that inorganic arsenic is taken up by rice through silicon transporters under anaerobic conditions, thus the ability to efficiently take up silicon may be considered either a positive or a negative trait in rice. Germanium is an analogue of silicon that produces brown lesions in shoots and leaves, and germanium toxicity has been used to identify mutants in silicon and arsenic transport. In this study, two different genetic mapping methods were performed to determine the loci involved in germanium sensitivity in rice. Genetic mapping in the biparental cross of Bala × Azucena (an F6 population and a genome wide association (GWA study with 350 accessions from the Rice Diversity Panel 1 were conducted using 15 μM of germanic acid. This identified a number of germanium sensitive loci: some co-localised with previously identified quantitative trait loci (QTL for tissue silicon or arsenic concentration, none co-localised with Lsi1 or Lsi6, while one single nucleotide polymorphism (SNP was detected within 200 kb of Lsi2 (these are genes known to transport silicon, whose identity was discovered using germanium toxicity. However, examining candidate genes that are within the genomic region of the loci detected above reveals genes homologous to both Lsi1 and Lsi2, as well as a number of other candidate genes, which are discussed.

  11. Search for Pauli Exclusion Principle Violating Atomic Transitions and Electron Decay with a P-type Point Contact Germanium Detector

    CERN Document Server

    Abgrall, N; Avignone, F T; Barabash, A S; Bertrand, F E; Bradley, A W; Brudanin, V; Busch, M; Buuck, M; Caldwell, A S; Chan, Y-D; Christofferson, C D; Chu, P -H; Cuesta, C; Detwiler, J A; Dunagan, C; Efremenko, Yu; Ejiri, H; Elliott, S R; Finnerty, P S; Galindo-Uribarri, A; Gilliss, T; Giovanetti, G K; Goett, J; Green, M P; Gruszko, J; Guinn, I S; Guiseppe, V E; Henning, R; Hoppe, E W; Howard, S; Howe, M A; Jasinski, B R; Keeter, K J; Kidd, M F; Konovalov, S I; Kouzes, R T; LaFerriere, B D; Leon, J; MacMullin, J; Martin, R D; Massarczyk, R; Meijer, S J; Mertens, S; Orrell, J L; O'Shaughnessy, C; Poon, A W P; Radford, D C; Rager, J; Rielage, K; Robertson, R G H; Romero-Romero, E; Shanks, B; Shirchenko, M; Suriano, A M; Tedeschi, D; Trimble, J E; Varner, R L; Vasilyev, S; Vetter, K; Vorren, K; White, B R; Wilkerson, J F; Wiseman, C; Xu, W; Yakushev, E; Yu, C -H; Yumatov, V; Zhitnikov, I

    2016-01-01

    A search for Pauli-exclusion-principle-violating K-alpha electron transitions was performed using 89.5 kg-d of data collected with a p-type point contact high-purity germanium detector operated at the Kimballton Underground Research Facility. A lower limit on the transition lifetime of 5.8x10^30 seconds at 90% C.L. was set by looking for a peak at 10.6 keV resulting from the x-ray and Auger electrons present following the transition. A similar analysis was done to look for the decay of atomic K-shell electrons into neutrinos, resulting in a lower limit of 6.8x10^30 seconds at 90 C.L. It is estimated that the MAJORANA DEMONSTRATOR, a 44 kg array of p-type point contact detectors that will search for the neutrinoless double-beta decay of 76-Ge, could improve upon these exclusion limits by an order of magnitude after three years of operation.

  12. Size Controlled Synthesis of Germanium Nanocrystals: Effect of Ge Precursor and Hydride Reducing Agent

    Directory of Open Access Journals (Sweden)

    Darragh Carolan

    2015-01-01

    Full Text Available Germanium nanocrystals (Ge NCs have attracted increasing attention as a promising alternative to II–VI and IV–VI semiconductor materials as they are cheap, “green,” electrochemically stable, and compatible with existing CMOS processing methods. Germanium is a particularly attractive material for optoelectronic applications as it combines a narrow band gap with high carrier mobilities and a large exciton Bohr radius. Solution-phase synthesis and characterisation of size monodisperse alkyl-terminated Ge NCs are demonstrated. Ge NCs were synthesised under inert atmospheric conditions via the reduction of Ge halide salts (GeX4 by hydride reducing agents within inverse micelles. Regulation of NC size is achieved by variation of germanium precursor and the strength of hydride reducing agents used. UV-Visible absorbance and photoluminescence spectroscopy showed strong significant quantum confinement effects, with moderate absorption in the UV spectral range, and strong emission in the violet with a marked dependence on excitation wavelength.

  13. Silicon-germanium (Sige) nanostructures production, properties and applications in electronics

    CERN Document Server

    Usami, N

    2011-01-01

    Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and mo...

  14. Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

    KAUST Repository

    Chroneos, Alexander I.

    2012-01-26

    In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p- and n-type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Operando X-ray scattering and spectroscopic analysis of germanium nanowire anodes in lithium ion batteries.

    Science.gov (United States)

    Silberstein, Katharine E; Lowe, Michael A; Richards, Benjamin; Gao, Jie; Hanrath, Tobias; Abruña, Héctor D

    2015-02-17

    X-ray diffraction (XRD) and Fourier transform extended X-ray absorption fine structure (EXAFS) analysis of X-ray absorption spectroscopy (XAS) measurements have been employed to determine structural and bonding changes, as a function of the lithium content/state of charge, of germanium nanowires used as the active anode material within lithium ion batteries (LIBs). Our data, collected throughout the course of battery cycling (operando), indicate that lithium incorporation within the nanostructured germanium occurs heterogeneously, preferentially into amorphous regions over crystalline domains. Maintenance of the molecular structural integrity within the germanium nanowire is dependent on the depth of discharge. Discharging to a shallower cutoff voltage preserves partial crystallinity for several cycles. PMID:25616130

  16. Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

    2009-07-01

    Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Germanium field-effect transistor made from a high-purity substrate

    International Nuclear Information System (INIS)

    Field effect transistors have been fabricated on high-purity germanium substrates using low-temperature technology. The aim of this work is to preserve the low density of trapping centers in high-quality starting material by low-temperature (0C) processing. The use of germanium promises to eliminate some of the traps which cause generation-recombination noise in silicon field-effect transistors (FET's) at low temperatures. Typically, the transconductance (g/sub m/) in the germanium FET's is 10 mA/V and the gate leakage can be less than 10-12 A. Present devices exhibit a large 1/f noise component and most of this noise must be eliminated if they are to be competitive with silicon FET's commonly used in high-resolution nuclear spectrometers

  18. Elasticity, anelasticity, and microplasticity of directionally crystallized aluminum-germanium alloys

    Science.gov (United States)

    Kardashev, B. K.; Korchunov, B. N.; Nikanorov, S. P.; Osipov, V. N.; Fedorov, V. Yu.

    2014-07-01

    The structure, Young's modulus defect, and internal friction in aluminum-germanium alloys have been studied under conditions of longitudinal elastic vibrations with a strain amplitude in the range of 10-6-3 × 10-4 at frequencies about 100 kHz. The ribbon-shaped samples of the alloys with the germanium content from 35 to 64 wt % have been produced by drawing from the melt by the Stepanov method at a rate of 0.1 mm/s. It has been shown that the dependences of the Young's modulus defect, logarithmic decrement, and vibration stress amplitude on the germanium content in the alloy at a constant strain amplitude have an extremum at 53 wt % Ge. This composition corresponds to the eutectic composition. The dependences of the Young's modulus defect, the decrement, and vibration stress amplitude at a constant microstrain amplitude have been explained by the vibrational displacements of dislocations, which depend on the alloy structure.

  19. Hybrid Array of Gamma Ray Detectors (HAGRiD)

    Science.gov (United States)

    Smith, Karl; Grzywacz, R.; Jones, K. L.; Munoz, S.; Baugher, T.; Cizewski, J. A.; Ratkiewicz, A.; Pain, S. D.

    2015-10-01

    Transfer reactions and beta-decay studies are powerful tools to study nuclear structure and to provide insight into astrophysically important reactions that may be difficult to measure directly. Both types of studies are enhanced immensely by measuring a particle-gamma coincidence. For transfer reactions, gamma-ray measurements improve the resolution, aid in channel selection and lifetime measurements. To achieve these coincidences the Hybrid Array of Gamma Ray Detectors (HAGRiD) is being designed and constructed. This array would be coupled with the Oak Ridge Rutgers Barrel Array (ORRUBA) of silicon detectors, the Versatile Array of Neutron Detectors at Low Energy (VANDLE) and beta detection scintillators. Detector systems providing a particle-gamma coincidence have previously compromised the charged-particle angular resolution due to compact geometries used to increase the gamma efficiency. HAGRiD will be coupled with ORRUBA such that resolution is not sacrificed, requiring the new array to provide improved resolution and efficiency over NaI and increased portability and flexibility over germanium detectors; therefore, we have chosen to use LaBr3(Ce) crystals. We demonstrate the advantages of a coupled detector system and discuss the current status of the project.

  20. PREFACE: 2nd Workshop on Germanium Detectors and Technologies

    Science.gov (United States)

    Abt, I.; Majorovits, B.; Keller, C.; Mei, D.; Wang, G.; Wei, W.

    2015-05-01

    The 2nd workshop on Germanium (Ge) detectors and technology was held at the University of South Dakota on September 14-17th 2014, with more than 113 participants from 8 countries, 22 institutions, 15 national laboratories, and 8 companies. The participants represented the following big projects: (1) GERDA and Majorana for the search of neutrinoless double-beta decay (0νββ) (2) SuperCDMS, EDELWEISS, CDEX, and CoGeNT for search of dark matter; (3) TEXONO for sub-keV neutrino physics; (4) AGATA and GRETINA for gamma tracking; (5) AARM and others for low background radiation counting; (5) as well as PNNL and LBNL for applications of Ge detectors in homeland security. All participants have expressed a strong desire on having better understanding of Ge detector performance and advancing Ge technology for large-scale applications. The purpose of this workshop was to leverage the unique aspects of the underground laboratories in the world and the germanium (Ge) crystal growing infrastructure at the University of South Dakota (USD) by brining researchers from several institutions taking part in the Experimental Program to Stimulate Competitive Research (EPSCoR) together with key leaders from international laboratories and prestigious universities, working on the forefront of the intensity to advance underground physics focusing on the searches for dark matter, neutrinoless double-beta decay (0νββ), and neutrino properties. The goal of the workshop was to develop opportunities for EPSCoR institutions to play key roles in the planned world-class research experiments. The workshop was to integrate individual talents and existing research capabilities, from multiple disciplines and multiple institutions, to develop research collaborations, which includes EPSCor institutions from South Dakota, North Dakota, Alabama, Iowa, and South Carolina to support multi-ton scale experiments for future. The topic areas covered in the workshop were: 1) science related to Ge

  1. Detached Solidification of Germanium-Silicon Crystals on the ISS

    Science.gov (United States)

    Volz, M. P.; Mazuruk, K.; Croell, A.

    2016-01-01

    A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

  2. Automatic energy calibration of germanium detectors using fuzzy set theory

    International Nuclear Information System (INIS)

    With the advent of multi-detector arrays, many tasks that are usually performed by physicists, such as energy calibration, become very time consuming. There is therefore a need to develop more and more complex algorithms able to mimic human expertise. Fuzzy logic proposes a theoretical framework to build algorithms that are close to the human way of thinking. In this paper we apply fuzzy set theory in order to develop an automatic procedure for energy calibration. The algorithm, based on fuzzy concepts, has been tested on data taken with the EUROBALL IV γ-ray array

  3. GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

    Energy Technology Data Exchange (ETDEWEB)

    Heusser, G.; Weber, M.; Hakenmueller, J.; Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H. [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany); Laubenstein, M. [Laboratori Nazionali del Gran Sasso, Assergi (Italy)

    2015-11-15

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut fuer Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤ 100μBq kg{sup -1} for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites. (orig.)

  4. Charge-trap correction and radiation damage in orthogonal-strip planar germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hull, E.L. [PHDS Corporation, 3011 Amherst Road, Knoxville, TN 37921 (United States); Jackson, E.G.; Lister, C.J. [Physics Department, University of Massachusetts Lowell, Lowell, MA 01854 (United States); Pehl, R.H. [PHDS Corporation, 3011 Amherst Road, Knoxville, TN 37921 (United States)

    2014-10-21

    A charge-carrier trap correction technique was developed for orthogonal strip planar germanium gamma-ray detectors. The trap corrector significantly improves the gamma-ray energy resolution of detectors with charge-carrier trapping from crystal-growth defects and radiation damage. Two orthogonal-strip planar germanium detectors were radiation damaged with 2-MeV neutron fluences of ∼8×10{sup 9} n/cm{sup 2}. The radiation-damaged detectors were studied in the 60–80 K temperature range.

  5. Strain distribution in single, suspended germanium nanowires studied using nanofocused x-rays

    DEFF Research Database (Denmark)

    Keplinger, Mario; Grifone, Raphael; Greil, Johannes;

    2016-01-01

    Within the quest for direct band-gap group IV materials, strain engineering in germanium is one promising route. We present a study of the strain distribution in single, suspended germanium nanowires using nanofocused synchrotron radiation. Evaluating the probed Bragg reflection for different...... illumination positions along the nanowire length results in corresponding strain components as well as the nanowire's tilting and bending. By using these findings we determined the complete strain state with the help of finite element modelling. The resulting information provides us with the possibility...... of evaluating the validity of the strain investigations following from Raman scattering experiments which are based on the assumption of purely uniaxial strain....

  6. GIOVE - A New Detector Setup for High Sensitivity Germanium Spectroscopy At Shallow Depth

    CERN Document Server

    Heusser, Gerd; Hakenmüller, Janina; Laubenstein, Matthias; Lindner, Manfred; Maneschg, Werner; Simgen, Hardy; Stolzenburg, Dominik; Strecker, Herbert

    2015-01-01

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer Veto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut f\\"ur Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of <100 {\\mu}Bq/kg for primordial radionuclides from U and Th in typical {\\gamma} ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites.

  7. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

    Science.gov (United States)

    Haller, Eugene E.; Brundermann, Erik

    2000-01-01

    A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

  8. Temperature-dependent hyperfine interactions at {sup 111}Cd-C complex in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Mola, Genene Tessema [University of Kwazulu-Natal, School Chemistry and Physics, Pietermaritzburg Campus, Private Bag X01, Scottsville (South Africa)

    2013-09-15

    The temperature dependent nuclear hyperfine interaction of {sup 111}Cd-carbon complex in germanium has been studied using the perturbed {gamma}-{gamma} angular correlation (PAC) method. The parameters of the hyperfine interaction representing substitutional carbon-cadmium complex in germanium ({nu} {sub Q1}=207(1) MHz ({eta}=0.16)) shows dependence on temperature. The formation and thermal stability of the complex has been reported by the same author earlier. It was found in this study that the quadrupole coupling constant of the interaction increases at sample temperature below 293 K. The results are encouraging toward better understanding of the complex in the host matrix. (orig.)

  9. Extraction of Physics Signals Near Threshold with Germanium Detectors in Neutrino and Dark Matter Experiments

    CERN Document Server

    Soma, A K; Lin, F K; Singh, M K; Jiang, H; Liu, S K; Singh, L; Wu, Y C; Yang, L T; Zhao, W; Agartioglu, M; Asryan, G; Chuang, Y C; Deniz, M; Hsu, C L; Hsu, Y H; Huang, T R; Li, H B; Li, J; Liao, F T; Liao, H Y; Lin, C W; Lin, S T; Ma, J L; Sharma, V; Shen, Y T; Singh, V; Su, J; Subrahmanyam, V S; Tseng, C H; Wang, J J; Wong, H T; Xu, Y; Yang, S W; Yu, C X; Yuan, X C; Yue, Q; Zeyre, M

    2014-01-01

    Germanium ionization detectors with sensitivities as low as 100 eVee open new windows for the studies of neutrino and dark matter physics. The physics motivations of sub-keV germanium detectors are summarized. The amplitude of physics signals is comparable to those due to fluctuations of the pedestal electronic noise. Various experimental issues have to be attended before the promises of this new detector technique can be fully exploited. These include quenching factors, energy definition and calibration, signal triggering and selection together with their associated inefficiencies derivation. The efforts and results of an R&D program to address these challenges are presented.

  10. Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wei; Li, Lingzi; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Tok, Eng Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-06-14

    This work demonstrates and describes for the first time an unusual strain-relaxation mechanism by the formation and self-assembly of well-ordered tin wires during the thermal annealing of epitaxial Ge{sub 0.83}Sn{sub 0.17}-on-Ge(001) substrate. Fully strained germanium-tin alloys (Ge{sub 0.83}Sn{sub 0.17}) were epitaxially grown on Ge(001) substrate by molecular beam epitaxy. The morphological and compositional evolution of Ge{sub 0.83}Sn{sub 0.17} during thermal annealing is studied by atomic force microscopy, X-ray diffraction, transmission electron microscopy. Under certain annealing conditions, the Ge{sub 0.83}Sn{sub 0.17} layer decomposes into two stable phases, and well-defined Sn wires that are preferentially oriented along two orthogonal 〈100〉 azimuths are formed. The formation of the Sn wires is related to the annealing temperature and the Ge{sub 0.83}Sn{sub 0.17} thickness, and can be explained by the nucleation of a grain with Sn islands on the outer front, followed by grain boundary migration. The Sn wire formation process is found to be thermally activated, and an activation enthalpy (E{sub c}) of 0.41 eV is extracted. This thermally activated phase transformation, i.e., 2D epitaxial layer to 3D wires, occurs via a mechanism akin to “cellular precipitation.” This synthesis route of Sn wires opens new possibilities for creation of nanoscale patterns at high-throughput without the need for lithography.

  11. Wafer-level radiometric performance testing of uncooled microbolometer arrays

    Science.gov (United States)

    Dufour, Denis G.; Topart, Patrice; Tremblay, Bruno; Julien, Christian; Martin, Louis; Vachon, Carl

    2014-03-01

    A turn-key semi-automated test system was constructed to perform on-wafer testing of microbolometer arrays. The system allows for testing of several performance characteristics of ROIC-fabricated microbolometer arrays including NETD, SiTF, ROIC functionality, noise and matrix operability, both before and after microbolometer fabrication. The system accepts wafers up to 8 inches in diameter and performs automated wafer die mapping using a microscope camera. Once wafer mapping is completed, a custom-designed quick insertion 8-12 μm AR-coated Germanium viewport is placed and the chamber is pumped down to below 10-5 Torr, allowing for the evaluation of package-level focal plane array (FPA) performance. The probe card is electrically connected to an INO IRXCAM camera core, a versatile system that can be adapted to many types of ROICs using custom-built interface printed circuit boards (PCBs). We currently have the capability for testing 384x288, 35 μm pixel size and 160x120, 52 μm pixel size FPAs. For accurate NETD measurements, the system is designed to provide an F/1 view of two rail-mounted blackbodies seen through the Germanium window by the die under test. A master control computer automates the alignment of the probe card to the dies, the positioning of the blackbodies, FPA image frame acquisition using IRXCAM, as well as data analysis and storage. Radiometric measurement precision has been validated by packaging dies measured by the automated probing system and re-measuring the SiTF and Noise using INO's pre-existing benchtop system.

  12. High bit rate germanium single photon detectors for 1310nm

    Science.gov (United States)

    Seamons, J. A.; Carroll, M. S.

    2008-04-01

    There is increasing interest in development of high speed, low noise and readily fieldable near infrared (NIR) single photon detectors. InGaAs/InP Avalanche photodiodes (APD) operated in Geiger mode (GM) are a leading choice for NIR due to their preeminence in optical networking. After-pulsing is, however, a primary challenge to operating InGaAs/InP single photon detectors at high frequencies1. After-pulsing is the effect of charge being released from traps that trigger false ("dark") counts. To overcome this problem, hold-off times between detection windows are used to allow the traps to discharge to suppress after-pulsing. The hold-off time represents, however, an upper limit on detection frequency that shows degradation beginning at frequencies of ~100 kHz in InGaAs/InP. Alternatively, germanium (Ge) single photon avalanche photodiodes (SPAD) have been reported to have more than an order of magnitude smaller charge trap densities than InGaAs/InP SPADs2, which allowed them to be successfully operated with passive quenching2 (i.e., no gated hold off times necessary), which is not possible with InGaAs/InP SPADs, indicating a much weaker dark count dependence on hold-off time consistent with fewer charge traps. Despite these encouraging results suggesting a possible higher operating frequency limit for Ge SPADs, little has been reported on Ge SPAD performance at high frequencies presumably because previous work with Ge SPADs has been discouraged by a strong demand to work at 1550 nm. NIR SPADs require cooling, which in the case of Ge SPADs dramatically reduces the quantum efficiency of the Ge at 1550 nm. Recently, however, advantages to working at 1310 nm have been suggested which combined with a need to increase quantum bit rates for quantum key distribution (QKD) motivates examination of Ge detectors performance at very high detection rates where InGaAs/InP does not perform as well. Presented in this paper are measurements of a commercially available Ge APD

  13. Germanium and Rare Earth Element accumulation in woody bioenergy crops

    Science.gov (United States)

    Hentschel, Werner

    2016-04-01

    Germanium and REEs are strategic elements that are used for high tech devices and engineered systems, however these elements are hardly concentrated into mineable ore deposits. Since these elements occur widely dispersed in the earth crust with concentrations of several mgṡkg-1 (Ge 1.6 mgṡkg-1, Nd 25 mgṡkg-1) a new possibility to gain these elements could be phytomining, a technique that uses plants to extract elements from soils via their roots. Since knowledge about accumulating plant species is quite limited we conducted research on the concentrations of strategic elements in wood and leaves of fast growing tree species (Salix spec., Populus spec., Betula pendula, Alnus glutinosa, Fraxinus excelsior, Acer pseudoplatanus). In total 35 study sites were selected in the mining affected area around Freiberg (Saxony, Germany), differing in their species composition and degree of contamination with toxic trace metals (Pb, As, Cd). On each site plant tissues (wood and leaves, respectively) of different species were sampled. In addition soil samples were taken from a soil depth of 0 - 30 cm and 30 - 60 cm. The aim of our work was to investigate correlations between the concentrations of the target elements in plant tissues and soil characteristics like pH, texture, nutrients and concentrations in six operationally defined soil fractions (mobile, acid soluble, oxidizable, amorphic oxides, crystalline oxides, residual or siliceous). Concentrations of elements in soil extracts and plant tissues were measured with ICP-MS. The element Nd was selected as representative for the group of REEs, since this element showed a high correlation with the concentrations of the other REE We found that the concentration of Nd in the leaves (0.31 mgṡkg-1Nd) were several times higher than in herbaceous species (0.05 mgṡkg-1 Nd). The concentration of Ge in leaves were ten times lower than that of Nd whereas in herbaceous species Nd and Ge were in equal magnitude. Within the tree

  14. Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations

    Science.gov (United States)

    Jin, Yuanyuan; Lu, Shengjie; Hermann, Andreas; Kuang, Xiaoyu; Zhang, Chuanzhao; Lu, Cheng; Xu, Hongguang; Zheng, Weijun

    2016-07-01

    We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen‑ (n = 3–12), and their corresponding neutral species. Photoelectron spectra of RuGen‑ clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 ≤ n ≤ 12. Subsequent geometry optimizations using density functional theory (DFT) at PW91/LANL2DZ level are carried out to determine the relative stability and electronic properties of ruthenium doped germanium clusters. It is found that most of the anionic and neutral clusters have very similar global features. Although the global minimum structures of the anionic and neutral clusters are different, their respective geometries are observed as the low-lying isomers in either case. In addition, for n > 8, the Ru atom in RuGen‑/0 clusters is absorbed endohedrally in the Ge cage. The theoretically predicted vertical and adiabatic detachment energies are in good agreement with the experimental measurements. The excellent agreement between DFT calculations and experiment enables a comprehensive evaluation of the geometrical and electronic structures of ruthenium doped germanium clusters.

  15. Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon

    Institute of Scientific and Technical Information of China (English)

    LIN Li-Xia; CHEN Jia-He; WU Peng; ZENG Yu-Heng; MA Xiang-Yang; YANG De-Ren

    2011-01-01

    The formation of a denuded zone(DZ) by conventional furnace annealing(CFA) and rapid thermal annealing (RTA) based denudation processing is investigated and the gettering of copper(Cu) atoms in germanium co-doped heavily phosphorus-doped Czochralski(GHPCZ)silicon wafers is evaluated. It is suggested that both a good quality defect-free DZ with a suitable width in the sub-surface area and a high density bulk micro-defect(BMD)region could be formed in heavily phosphorus-doped Czochralski(HPCZ)silicon and GHPCZ silicon wafers.This is ascribed to the formation of phosphorus-vacancy(P-V) related complexes and germanium-vacancy(GeV) related complexes. Compared with HPCZ silicon, the DZ width is wider in the GHPCZ silicon sample with CFA-based denudation processing but narrower in the one with two-step RTA pretreatments. These phenomena are ascribed to the enhancing effect of germanium on oxygen out-diffusion movement and oxygen precipitate nucleation, respectively. Furthermore, fairly clean DZs near the surface remain in both the HPCZ and GHPCZ silicon wafers after Cu in-diffusion, except for the HPCZ silicon wafer which underwent denudation processing with a CFA pretreatment, suggesting that germanium doping could improve the gettering of Cu contamination.

  16. Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

    DEFF Research Database (Denmark)

    Hellings, G.; Rosseel, E.; Simoen, E.;

    2011-01-01

    Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3...

  17. Enhanced Third Harmonic Generation in Single Germanium Nanodisks Excited at the Anapole Mode.

    Science.gov (United States)

    Grinblat, Gustavo; Li, Yi; Nielsen, Michael P; Oulton, Rupert F; Maier, Stefan A

    2016-07-13

    We present an all-dielectric germanium nanosystem exhibiting a strong third order nonlinear response and efficient third harmonic generation in the optical regime. A thin germanium nanodisk shows a pronounced valley in its scattering cross section at the dark anapole mode, while the electric field energy inside the disk is maximized due to high confinement within the dielectric. We investigate the dependence of the third harmonic signal on disk size and pump wavelength to reveal the nature of the anapole mode. Each germanium nanodisk generates a high effective third order susceptibility of χ((3)) = 4.3 × 10(-9) esu, corresponding to an associated third harmonic conversion efficiency of 0.0001% at an excitation wavelength of 1650 nm, which is 4 orders of magnitude greater than the case of an unstructured germanium reference film. Furthermore, the nonlinear conversion via the anapole mode outperforms that via the radiative dipolar resonances by about 1 order of magnitude, which is consistent with our numerical simulations. These findings open new possibilities for the optimization of upconversion processes on the nanoscale through the appropriate engineering of suitable dielectric materials. PMID:27331867

  18. Germanium recovery from gasification fly ash: evaluation of end-products obtained by precipitation methods.

    Science.gov (United States)

    Arroyo, Fátima; Font, Oriol; Fernández-Pereira, Constantino; Querol, Xavier; Juan, Roberto; Ruiz, Carmen; Coca, Pilar

    2009-08-15

    In this study the purity of the germanium end-products obtained by two different precipitation methods carried out on germanium-bearing solutions was evaluated as a last step of a hydrometallurgy process for the recovery of this valuable element from the Puertollano Integrated Gasification Combined Cycle (IGCC) fly ash. Since H(2)S is produced as a by-product in the gas cleaning system of the Puertollano IGCC plant, precipitation of germanium as GeS(2) was tested by sulfiding the Ge-bearing solutions. The technological and hazardous issues that surround H(2)S handling conducted to investigate a novel precipitation procedure: precipitation as an organic complex by adding 1,2-dihydroxy benzene pyrocatechol (CAT) and cetyltrimethylammonium bromide (CTAB) to the Ge-bearing solutions. Relatively high purity Ge end-products (90 and 93% hexagonal-GeO(2) purity, respectively) were obtained by precipitating Ge from enriched solutions, as GeS(2) sulfiding the solutions with H(2)S, or as organic complex with CAT/CTAB mixtures and subsequent roasting of the precipitates. Both methods showed high efficiency (>99%) to precipitate selectively Ge using a single precipitation stage from germanium-bearing solutions.

  19. Thermophysical Properties of Molten Germanium Measured by the High Temperature Electrostatic Levitator

    Science.gov (United States)

    Rhim, W. K.; Ishikawa, T.

    1998-01-01

    Thermophysical properties of molten germanium such as the density, the thermal expansion coefficient, the hemisphereical total emissivity, the constant pressure specific heat capacity, the surface tension, and the electrical resistivity have been measured using the High Temperature Electrostatic Levitator at JPL.

  20. Dark Matter Search with sub-keV Germanium Detectors at the China Jinping Underground Laboratory

    CERN Document Server

    Yue, Qian

    2012-01-01

    Germanium detectors with sub-keV sensitivities open a window to search for low-mass WIMP dark matter. The CDEX-TEXONO Collaboration is conducting the first research program at the new China Jinping Underground Laboratory with this approach. The status and plans of the laboratory and the experiment are discussed.

  1. Germanium detectors for nuclear spectroscopy: Current research and development activity at LNL

    Science.gov (United States)

    Napoli, D. R.; Maggioni, G.; Carturan, S.; Eberth, J.; Gelain, M.; Grimaldi, M. G.; Tatí, S.; Riccetto, S.; Mea, G. Della

    2016-07-01

    High-purity Germanium (HPGe) detectors have reached an unprecedented level of sophistication and are still the best solution for high-resolution gamma spectroscopy. In the present work, we will show the results of the characterization of new surface treatments for the production of these detectors, studied in the framework of our multidisciplinary research program in HPGe detector technologies.

  2. Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations

    Science.gov (United States)

    Jin, Yuanyuan; Lu, Shengjie; Hermann, Andreas; Kuang, Xiaoyu; Zhang, Chuanzhao; Lu, Cheng; Xu, Hongguang; Zheng, Weijun

    2016-01-01

    We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen− (n = 3–12), and their corresponding neutral species. Photoelectron spectra of RuGen− clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 ≤ n ≤ 12. Subsequent geometry optimizations using density functional theory (DFT) at PW91/LANL2DZ level are carried out to determine the relative stability and electronic properties of ruthenium doped germanium clusters. It is found that most of the anionic and neutral clusters have very similar global features. Although the global minimum structures of the anionic and neutral clusters are different, their respective geometries are observed as the low-lying isomers in either case. In addition, for n > 8, the Ru atom in RuGen−/0 clusters is absorbed endohedrally in the Ge cage. The theoretically predicted vertical and adiabatic detachment energies are in good agreement with the experimental measurements. The excellent agreement between DFT calculations and experiment enables a comprehensive evaluation of the geometrical and electronic structures of ruthenium doped germanium clusters. PMID:27439955

  3. Luminescence decay dynamics of self-assembled germanium islands in silicon

    DEFF Research Database (Denmark)

    Julsgaard, Brian; Balling, Peter; Hansen, John Lundsgaard;

    2011-01-01

    The dynamics of the luminescence decay from self-assembled germanium islands embedded in crystalline silicon has been studied for temperatures varied between 16 K and room temperature. We separate the time scale for various dynamical processes by time-resolved emission spectroscopy and identify...

  4. Characterization of Segmented Large Volume, High Purity Germanium Detectors

    OpenAIRE

    Bruyneel, Bart

    2006-01-01

    Gamma ray tracking in future HPGe arrays like AGATA will rely on pulse shape analysis (PSA) of multiple Gamma interactions. For this purpose, a simple and fast procedure was developed which enabled the first full characterization of a segmented large volume HPGe detector. An analytical model for the hole mobility in a Ge crystal lattice was developed to describe the hole drift anisotropy with experimental velocity values along the crystal axis as parameters. The new model is based on the drif...

  5. Design and optimisation of suspended strained germanium membranes for near-infrared lasing (Conference Presentation)

    Science.gov (United States)

    Burt, Daniel; Aldeek, Waseem; Aldaghri, Osamah A.; Ikonic, Zoran; Querin, Oswaldo M.; Kelsall, Robert W.

    2016-05-01

    The development of a semiconductor laser compatible with silicon substrates and high-volume silicon integrated circuit manufacturing is a key requirement for monolithic silicon photonic transceivers. Tensile strained germanium is a promising material system which meets these criteria, and both optically pumped and electrically injected lasing have been reported[1,2]. It is well established that growth of thick (~1 micron) layers of germanium on silicon substrates by two-stage chemical vapour deposition followed by thermal annealing results in nearly-relaxed germanium with a residual biaxial tensile strain of typically 0.15-0.25% [3]. Several researchers have investigated methods of amplifying this built-in strain in order to increase the attainable optical gain. Increased uniaxial strain levels have been demonstrated in suspended linear bridge structures created by wet chemical underetching. However, uniaxial strain is less effective than biaxial strain in converting germanium from an indirect to a direct gap semiconductor and hence generating substantial optical gain. In this work, we have computationally investigated and optimised two-dimensional patterning and under-etching of germanium membranes in order to achieve biaxial strain amplification. Strain simulations were carried out using finite element methods and the shape of the suspended germanium structures was optimised to achieve the highest tensile strain whilst remaining below the empirically determined yield strength of the thin membranes. The net optical gain distribution across the membrane was calculated using 8 band k.p bandstructure to determine the full interband gain, the inter-valence-band absorption and the intervalley and intravalley phonon- and impurity-assisted free carrier absorption. Band-gap narrowing effects were included using empirical data. Biaxial strain values of ~1% can be achieved in the lasing region of the structure, which, although below the level required to convert germanium

  6. Conceptual design of a hybrid Ge:Ga detector array

    Science.gov (United States)

    Parry, C. M.

    1984-01-01

    For potential applications in space infrared astronomy missions such as the Space Infrared Telescope Facility and the Large Deployable Reflector, integrated arrays of long-wavelength detectors are desired. The results of a feasibility study which developed a design for applying integrated array techniques to a long-wavelength (gallium-doped germanium) material to achieve spectral coverage between 30 and 200 microns are presented. An approach which builds up a two-dimensional array by stacking linear detector modules is presented. The spectral response of the Ge:Ga detectors is extended to 200 microns by application of uniaxial stress to the stack of modules. The detectors are assembled with 1 mm spacing between the elements. Multiplexed readout of each module is accomplished with integration sampling of a metal-oxide-semiconductor (MOS) switch chip. Aspects of the overall design, including the anticipated level of particle effects on the array in the space environment, a transparent electrode design for 200 microns response, estimates of optical crosstalk, and mechanical stress design calculations are included.

  7. Fabrication and characteristics of high-K HfO2 gate dielectrics on n-germanium

    Institute of Scientific and Technical Information of China (English)

    Han De-Dong; Kang Jin-Feng; Liu Xiao-Yan; Sun Lei; Luo Hao; Han Ru-Qi

    2007-01-01

    This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a furnace annealing. The impacts of sputtering ambient, annealing ambient and annealing temperature on the electrical properties of high-K HfO2 gate dielectrics on germanium substrates are investigated.Experimental results indicate that high-K HfO2 gate dielectrics on germanium substrates with good electrical characteristics are obtained, the electrical properties of high-K HfO2 gate dielectrics is strongly correlated with sputtering ambient, annealing ambient and annealing temperature.

  8. Average Energy Expended Per e-h Pair and Energy Scale Function for Germanium-Based Dark Matter Experiments

    CERN Document Server

    Wei, W -Z; Mei, D -M

    2016-01-01

    We report a new method to determine the temperature-dependent average energy expended per electron-hole (e-h) pair, $\\varepsilon$, for germanium detectors. As a result, the Fano factor and $\\varepsilon$ can be determined separately. Subsequently, we illustrate the variation of $\\varepsilon$ as a function of temperature. The impact of $\\varepsilon$ on the energy threshold and energy scale for germanium detectors at a given temperature is evaluated. We demonstrate an absolute energy scale function of low-energy recoils for germanium detectors in the direct detection of dark matter particles.

  9. Graphical Environment Tools for Application to Gamma-Ray Energy Tracking Arrays

    Energy Technology Data Exchange (ETDEWEB)

    Todd, Richard A. [RIS Corp.; Radford, David C. [ORNL Physics Div.

    2013-12-30

    Highly segmented, position-sensitive germanium detector systems are being developed for nuclear physics research where traditional electronic signal processing with mixed analog and digital function blocks would be enormously complex and costly. Future systems will be constructed using pipelined processing of high-speed digitized signals as is done in the telecommunications industry. Techniques which provide rapid algorithm and system development for future systems are desirable. This project has used digital signal processing concepts and existing graphical system design tools to develop a set of re-usable modular functions and libraries targeted for the nuclear physics community. Researchers working with complex nuclear detector arrays such as the Gamma-Ray Energy Tracking Array (GRETA) have been able to construct advanced data processing algorithms for implementation in field programmable gate arrays (FPGAs) through application of these library functions using intuitive graphical interfaces.

  10. Aerosol assisted chemical vapour deposition of germanium thin films using organogermanium carboxylates as precursors and formation of germania films

    Indian Academy of Sciences (India)

    Alpa Y Shah; Amey Wadawale; Vijaykumar S Sagoria; Vimal K Jain; C A Betty; S Bhattacharya

    2012-06-01

    Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)2], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700°C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600°C yield GeO2. Both Ge and GeO2 films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (–) characterization.

  11. Temperature control and characterization of silicon-germanium growth by rapid thermal chemical vapor deposition

    Science.gov (United States)

    Hwang, Sung-Bo

    Rapid thermal chemical vapor deposition (RTCVD) is an emerging technology to utilize low thermal budgets required to grow silicon-germanium alloys in a coherent way. However, the current state-of-the-art in RTCVD technique lacks some key elements required for acceptance of RTCVD in mainstream IC fabrication. These shortcomings include adequate control of wafer temperature during processing, and sufficient understanding of the growth kinetics. This dissertation describes and discusses the temperature control in RTCVD, the growth, and characterization of silicon-germanium alloys. The RTCVD system provides very reliable temperature-measurements, for a range of 480˜820°C, based on infrared-light (1.3 or 1.55mum) absorption in the silicon wafer during the growth of silicon-germanium alloys. A wafer heat transfer model developed using the view-factor analysis is used to investigate temperature distributions with respect to lamp configurations in RTCVD system. For a precise temperature control, a neural model-based controller in single-input-single-output (SISO) system is proposed, and compared with other controllers. Silicon-germanium alloys, in various semiconductor structures including dots, have been grown by RTCVD where temperature is well-controlled by the model-based controller. The structural and chemical properties of silicon-germanium alloys are characterized by X-ray diffraction, atomic force microscopy (AFM), transmission electron microscopy (TEM), and secondary ion mass spectrometry (SIMS). The different growth characteristics dominated by a silicon-source gas are exploited, and their process models are developed with the experimental data utilizing neural networks employed the Bayesian framework to accurately describe the process behaviors such as growth rate and Ge fraction in alloys with respect to process variables (to capture the process nonlinearity). By controlling growth rate and Ge fraction, a uniform and a grading Ge profile in silicon-germanium

  12. Temperature Dependence of the Average Energy Expended Per e-h Pair for Germanium-Based Dark Matter Experiments

    OpenAIRE

    Wei, W. -Z.; Wang, L.; Mei, D.-M.

    2016-01-01

    We report a new method to determine the temperature-dependent average energy expended per electron-hole (e-h) pair, $\\varepsilon$, for germanium detectors. As a result, the Fano factor and $\\varepsilon$ can be determined separately. Subsequently, we illustrate the variation of $\\varepsilon$ as a function of temperature. The impact of $\\varepsilon$ on the energy threshold and energy scale for germanium detectors at a given temperature is evaluated.

  13. Axiom turkey genotyping array

    Science.gov (United States)

    The Axiom®Turkey Genotyping Array interrogates 643,845 probesets on the array, covering 643,845 SNPs. The array development was led by Dr. Julie Long of the USDA-ARS Beltsville Agricultural Research Center under a public-private partnership with Hendrix Genetics, Aviagen, and Affymetrix. The Turk...

  14. 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

    Science.gov (United States)

    Gassenq, A.; Guilloy, K.; Osvaldo Dias, G.; Pauc, N.; Rouchon, D.; Hartmann, J.-M.; Widiez, J.; Tardif, S.; Rieutord, F.; Escalante, J.; Duchemin, I.; Niquet, Y.-M.; Geiger, R.; Zabel, T.; Sigg, H.; Faist, J.; Chelnokov, A.; Reboud, V.; Calvo, V.

    2015-11-01

    High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific Germanium-On-Insulator 200 mm wafer to improve tolerance to high strains induced via shaping of the Ge layers into micro-bridges. Building on the high crystalline quality, we demonstrate bi-axial tensile strain of 1.9%, which is currently the highest reported value measured in thick (350 nm) Ge layer. Since this strain is generally considered as the onset of the direct bandgap in Ge, our realization paves the way towards mid-infrared lasers fully compatible with CMOS fab technology.

  15. Current experiments in germanium 0 ν β β search -- GERDA and MAJORANA

    Science.gov (United States)

    von Sturm, K.

    2015-01-01

    There are unanswered questions regarding neutrino physics that are of great interest for the scientific community. For example the absolute masses, the mass hierarchy and the nature of neutrinos are unknown up to now. The discovery of neutrinoless double beta decay (0νββ) would prove the existence of a Majorana mass, which would be linked to the half-life of the decay, and would in addition provide an elegant solution for the small mass of the neutrinos via the seesaw mechanism. Because of an existing discovery claim of 0νββ of 76Ge and the excellent energy resolution achievable, germanium is of special interest in the search for 0νββ . In this article the state of the art of germanium 0νββ search, namely the GERDA experiment and MAJORANA demonstrator, is presented. In particular, recent results of the GERDA collaboration, which strongly disfavour the above mentioned claim, are discussed.

  16. Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ohyama, H., E-mail: ohyama@knct.ac.j [Kumamoto National College of Technology, 2659-2 Suya Koshi, Kumamoto 861-1102 (Japan); Rafi, J.M.; Campabadal, F. [Centro Nacional de Microelectronica (CNM-CSIC), Campus U.A.B, 08193, Bellaterra, Barcelona (Spain); Takakura, K. [Kumamoto National College of Technology, 2659-2 Suya Koshi, Kumamoto 861-1102 (Japan); Simoen, E. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Chen, J. [State Key Laboratory of Silicon Materials, Zhejiang University, 310027 Hangzhou (China); Vanhellemont, J. [Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, B-9000 Ghent (Belgium)

    2009-12-15

    Electron irradiation induced damage in diodes fabricated on germanium-doped and non-germanium-doped Czochralski (CZ) silicon substrates is studied. In general, both the reverse and forward current increase by irradiation. An interesting observation is, however, that the forward current decreases after 10{sup 17} e/cm{sup 2} irradiation for a forward voltage larger than approx0.7 V. This reduction can be explained by an increased resistivity of the substrate. After irradiation, the capacitance decreases due to deactivation of the phosphorus dopant. From IV and CV characteristics, there is a limited difference between the effect of electron irradiation of CZ-SiGe and CZ-Si based diodes.

  17. Recommendations for a Static Cosmic Ray Shield for Enriched Germanium Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Aguayo Navarrete, Estanislao; Orrell, John L.; Ankney, Austin S.; Berguson, Timothy J.

    2011-09-21

    This document provides a detailed study of cost and materials that could be used to shield the detector material of the international Tonne-scale germanium neutrinoless double-beta decay experiment from hadronic particles from cosmic ray showers at the Earth's surface. This work was motivated by the need for a shield that minimizes activation of the enriched germanium during storage; in particular, when the detector material is being worked on at the detector manufacturer's facility. This work considers two options for shielding the detector material from cosmic ray particles. One option is to use a pre-existing structure already located near the detector manufacturer, such as Canberra Industries in Meriden, Connecticut. The other option is to build a shield onsite at a detector manufacturer's site. This paper presents a cost and efficiency analysis of such construction.

  18. A Low-noise Germanium Ionization Spectrometer for Low-background Science

    CERN Document Server

    Aalseth, Craig E; Colaresi, Jim; Fast, James E; Hossbach, Todd W; Orrell, John L; Overman, Cory T; Scholz, Bjorn; VanDevender, Brent A; Yocum, K Michael

    2016-01-01

    Recent progress on the development of very low noise high purity germanium ionization spectrometers has produced an instrument of 1.2 kg mass and excellent noise performance. The detector was installed in a low-background cryostat intended for use in a direct detection search for low mass, WIMP dark matter. This Transaction reports the thermal characterization of the cryostat, specifications of the newly prepared 1.2 kg p-type point contact germanium detector, and the spectroscopic performance of the integrated system. The integrated detector and low background cryostat achieved full-width-at-half-maximum noise performance of 98 eV for an electronic pulse generator peak and 1.9 keV for the 1332 keV Co-60 gamma ray.

  19. GIOVE: a new detector setup for high sensitivity germanium spectroscopy at shallow depth

    Energy Technology Data Exchange (ETDEWEB)

    Heusser, G., E-mail: gerd.heusser@mpi-hd.mpg.de; Weber, M., E-mail: marc.weber@mpi-hd.mpg.de; Hakenmüller, J. [Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, 69117, Heidelberg (Germany); Laubenstein, M. [Laboratori Nazionali del Gran Sasso, Via G. Acitelli 22, 67100, Assergi, AQ (Italy); Lindner, M.; Maneschg, W.; Simgen, H.; Stolzenburg, D.; Strecker, H. [Max-Planck-Institut für Kernphysik, Saupfercheckweg 1, 69117, Heidelberg (Germany)

    2015-11-09

    We report on the development and construction of the high-purity germanium spectrometer setup GIOVE (Germanium Inner Outer VEto), recently built and now operated at the shallow underground laboratory of the Max-Planck-Institut für Kernphysik, Heidelberg. Particular attention was paid to the design of a novel passive and active shield, aiming at efficient rejection of environmental and muon induced radiation backgrounds. The achieved sensitivity level of ≤100 μBq kg{sup -1} for primordial radionuclides from U and Th in typical γ ray sample screening measurements is unique among instruments located at comparably shallow depths and can compete with instruments at far deeper underground sites.

  20. Estimation of decrease in efficiency of the high purity Germanium detector after a long time operation

    International Nuclear Information System (INIS)

    In many recent years, the gamma spectrometry using the high purity germanium (HPGe) detector have come into widespread use to determine the activity of radioactive samples. However, the decrease in detector efficiency remarkably influences on the result of measured gamma spectra. In this work, we estimated the decrease in efficiency of the GC1518 HPGe detector made in Canberra Industries, Inc. and located at the Center for HCMC Nuclear Techniques. It was found that the detector efficiency reduces to 8% within 6 years from October 1999 to August 2005. The decrease in efficiency can be explained by increase in the thickness of an inactive germanium layer based on using the Monte Carlo simulation. (author)

  1. Volume reflection and channeling of ultrarelativistic protons in germanium bent single crystals

    CERN Document Server

    Bellucci, S

    2016-01-01

    The paper devoted to investigation of volume reflection and channeling processes of ultrarela- tivistic positive charged particles moving in germanium single crystals. We demonstrate that the choice of atomic potential on the basis of Hartree-Fock method and correct choice of Debye tem- perature allow us to describe the above mentioned processes in a good agreement with the recent experiments. Moreover, the presented in the paper universal form of equations for volume reflection gives true description of the process at a wide range of particle energies. Standing on this study we make predictions for mean angle reflection (as a function of bending radius) of positive and negative particles for germanium (110) and (111) crystallographic planes.

  2. Study on dislocation multiplication in the head of Germanium single crystal

    Institute of Scientific and Technical Information of China (English)

    LI Nan; FENG Deshen; YIN Shiping; SU Xiaoping; YANG Hai; YU Yunqi; MI Jianjun

    2006-01-01

    The high strength, radiation hardness and cost-effectiveness make Germanium the substrate of choice for high-efficiency multi-junction solar cells for space applications.Numerical modeling and large-scale simulation are important and indispensable tools in the analysis and development of crystal growth process.In this study, germanium single crystals with low dislocation density were produced by Czochralski method by applying the necking technique.Chemical etching pits method was used to measure the dislocation density, and a professional modeling software CrysVUn was used to obtain the thermal-stress distribution.The results show that the thermal-stress of the sample with diameter of 15 mm is nearly equal to that of other samples, so the thermal-stress does not influence the dislocation multiplication.Based on the result, the dislocation density must be strangely increased caused by gravity.

  3. Schottky contacts in germanium nanowire network devices synthesized from nickel seeds

    Science.gov (United States)

    Gouveia, R. C.; Rodrigues, A. D.; Leite, E. R.; Chiquito, A. J.

    2016-10-01

    This paper presents reliable process to the synthesis of germanium nanowires by the vapor-liquid-solid method using nickel as an alternative catalyst to gold, the most commonly used metal, without toxic gas precursors. The structural study showed single-crystalline germanium nanowires with diamond structure, lengths of tens of microns and diameters smaller than 40 nm. The reduced dimensions of the nanowires led to phonons localization effect, with correlation lengths of the same order of the nanowires diameters. Additionally, the analysis of electronic properties of metal-nanowire-metal devices indicated the presence of Schottky barriers, whose values depend linearly on temperature. This linear dependence was assigned to the tunneling process through an insulator layer (mostly GeOx) at the metal-semiconductor interface. These results point to the existence of another channel for electrons transference from metal to semiconductor being very significant to electronic devices fabrication.

  4. Metastable phase formation during chemical vapor deposition of niobium-germanium films

    International Nuclear Information System (INIS)

    Regularities of different metastable phase formation during chemical vapor deposition of niobium-germanium coatings were investigated. These coatings were deposited on wire and band metal substrates by method of chemical transport reactions with the use of iodine as transporting agent. It was shown that it was possible to deposite the metastable Nb5Ge3 phase with structure of T2 type and X phase with cubic structure and hypothetical Nb2Ge composition during iodide process using Nb3Ge alloy as initial material together with phases existing at state diagram. Metastable T2 and X phases are formed only at high total pressure (more 250-500 Pa) and deposition rate less 1 μm/min. Coatings on the base of Nb3Ge with germanium content from 11 to 23 at.% were obtained

  5. Hybrid continuum–atomistic modelling of swift heavy ion radiation damage in germanium

    International Nuclear Information System (INIS)

    The response of germanium to swift heavy ion irradiation is simulated using a hybrid continuum–atomistic approach. The continuum part of the model, which characterises the electronic excitations is an extension of the inelastic thermal spike based on an approximation to the Boltzmann transport equation; while the atomistic part is represented with molecular dynamics. This integrated method can realistically account for the non-equilibrium carrier dynamics in band-gap materials under irradiation, unlike earlier developments based on the two-temperature approach. The model is used to obtain temporal and spatial evolution of carrier density, electronic temperature and lattice temperature for germanium irradiated with carbon cluster ions. Good agreement with experimental data of amorphised latent track radii for different stopping powers is obtained by fitting a constant value for the electron–phonon coupling strength – the only parameter treated as free in the model

  6. Monte Carlo simulation of complex germanium detector systems and Compton suppression spectrometers

    International Nuclear Information System (INIS)

    The performance of Germanium detectors and Compton suppression spectrometers is calculated using the Monte Carlo method in the energy range that is of interest for nuclear γ-ray spectroscopy. The calculated properties are: intrinsic peak efficiencies, peak/total and peak/Compton ratios as well as the Compton suppression factor for single gamma rays and high multiplicity gamma cascades. The reliability of the calculation is checked by comparison with the observed properties of existing devices. Then, response functions are predicted for new spectrometers. In particular, a new symmetric Compton suppression configuration using three Germanium crystals, which is capable of achieving an excellent performance, is proposed. This detector has been constructed and the experimental results are compared with the calculation. (orig.)

  7. Numerical evaluation of Auger recombination coefficients in relaxed and strained germanium

    Science.gov (United States)

    Dominici, Stefano; Wen, Hanqing; Bertazzi, Francesco; Goano, Michele; Bellotti, Enrico

    2016-05-01

    The potential applications of germanium and its alloys in infrared silicon-based photonics have led to a renewed interest in their optical properties. In this letter, we report on the numerical determination of Auger coefficients at T = 300 K for relaxed and biaxially strained germanium. We use a Green's function based model that takes into account all relevant direct and phonon-assisted processes and perform calculations up to a strain level corresponding to the transition from indirect to direct energy gap. We have considered excess carrier concentrations ranging from 1016 cm-3 to 5 × 1019 cm-3. For use in device level simulations, we also provide fitting formulas for the calculated electron and hole Auger coefficients as functions of carrier density.

  8. The impact of radiation on semiconducting characteristics of monocrystalline silicon and germanium

    Directory of Open Access Journals (Sweden)

    Obrenović Marija D.

    2016-01-01

    Full Text Available The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and g-radiation. Change of the samples' specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation. [Projekat Ministarstva nauke Republike Srbije, br. 171007

  9. Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

    Science.gov (United States)

    Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

    2015-05-01

    Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

  10. Study of the creep of germanium bi-crystals by X ray topography and electronic microscopy

    International Nuclear Information System (INIS)

    This research thesis addresses the study of the microscopic as well as macroscopic aspect of the role of grain boundary during deformation, by studying the creep of Germanium bi-crystals. The objective was to observe interactions of network dislocations with the boundary as well as the evolution of dislocations in each grain. During the first stages of deformation, samples have been examined by X ray topography, a technique which suits well the observation of low deformed samples, provided their initial dislocation density is very low. At higher deformation, more conventional techniques of observation of sliding systems and electronic microscopy have been used. After some general recalls, the definition of twin boundaries and of their structure in terms of dislocation, a look at germanium deformation, and an overview of works performed on bi-crystals deformation, the author presents the experimental methods and apparatuses. He reports and discusses the obtained results at the beginning of deformation as well as during next phases

  11. Analog Readout and Analysis Software for the Ultra-High Rate Germanium (UHRGe) Project

    International Nuclear Information System (INIS)

    High-resolution high-purity germanium (HPGe) spectrometers are needed for Safeguards applications such as spent fuel assay and uranium hexafluoride cylinder verification. In addition, these spectrometers would be applicable to other high-rate applications such as non-destructive assay of nuclear materials using nuclear resonance fluorescence. Count-rate limitations of today's HPGe technologies, however, lead to concessions in their use and reduction in their efficacy. Large-volume, very high-rate HPGe spectrometers are needed to enable a new generation of nondestructive assay systems. The Ultra-High Rate Germanium (UHRGe) project is developing HPGe spectrometer systems capable of operating at unprecedented rates, 10 to 100 times those available today. This report documents current status of developments in the analog electronics and analysis software.

  12. Analog Readout and Analysis Software for the Ultra-High Rate Germanium (UHRGe) Project

    Energy Technology Data Exchange (ETDEWEB)

    Fast, James E.; Aguayo Navarrete, Estanislao; Evans, Allan T.; VanDevender, Brent A.; Rodriguez, Douglas C.; Wood, Lynn S.

    2011-09-01

    High-resolution high-purity germanium (HPGe) spectrometers are needed for Safeguards applications such as spent fuel assay and uranium hexafluoride cylinder verification. In addition, these spectrometers would be applicable to other high-rate applications such as non-destructive assay of nuclear materials using nuclear resonance fluorescence. Count-rate limitations of today's HPGe technologies, however, lead to concessions in their use and reduction in their efficacy. Large-volume, very high-rate HPGe spectrometers are needed to enable a new generation of nondestructive assay systems. The Ultra-High Rate Germanium (UHRGe) project is developing HPGe spectrometer systems capable of operating at unprecedented rates, 10 to 100 times those available today. This report documents current status of developments in the analog electronics and analysis software.

  13. Production of pristine, sulfur-coated and silicon-alloyed germanium nanoparticles via laser pyrolysis

    Science.gov (United States)

    Kim, Seongbeom; Park, Song Yi; Jeong, Jaeki; Kim, Gi-Hwan; Rohani, Parham; Kim, Dong Suk; Swihart, Mark T.; Kim, Jin Young

    2015-07-01

    Here we demonstrate production of three types of germanium containing nanoparticles (NPs) by laser pyrolysis of GeH4 and characterize their sizes, structures and composition. Pristine Ge NPs were fabricated with 50 standard cubic centimeter per minute (sccm) of GeH4 and 25 sccm of SF6 as a photosensitizer gas, while sulfur-coated Ge NPs were produced with 25 sccm of GeH4 and 50 sccm of SF6. The laser pyrolysis of SiH4/GeH4 mixtures produced Si1-xGex alloy NPs. Effects of key process parameters including laser intensity and gas flow rates on NP properties have been investigated. The ability of the laser pyrolysis technique to flexibly produce a variety of germanium-containing NPs, as illustrated in this study shows promise for commercial-scale production of new nanomaterials as high purity dry powders.

  14. Wideband antireflection coatings on germanium and filters for second optical window

    Science.gov (United States)

    Ciosek, Jerzy; Firak, Jozef; Stanislawek, Urszula; Kwasny, Miroslaw; Kopczynski, Krzysztof

    2003-10-01

    The investigation results of wideband (8-12 μm) antireflection coatings on germanium substrate and spectral characteristics of interference wideband filter for spectral range of 8-12 μm are presented. For design of filters and antireflection coatings the following layer materials were used: Ge, ZnS and Mira, and substrate materials such as: Ge for antireflection coatings and ZnSe for interference filters. Wideband filter for the range of 8-12 μm requires application of additional two filters cutting off radiation from the range of 1-7 μm. The cutting off filters are interference filters for which construction germanium, Mira, and ZnS were used. The constructions of basic and cutting off filters were designed considering technical possibilities of vacuum device BAK 550 of the Balzers firm.

  15. Measurement of the isotopic composition of germanium by k{sub 0}-INAA and INAA

    Energy Technology Data Exchange (ETDEWEB)

    Vermaercke, P., E-mail: pvermaer@sckcen.b [SCK-CEN, Belgian Nuclear Research Centre, Boeretang 200, B-2400 Mol (Belgium); Hult, M. [EC-JRC-IRMM, Institute for Reference Materials and Measurements, Retieseweg, B-2440 Geel (Belgium); Verheyen, L.; Farina Arbocco, F. [SCK-CEN, Belgian Nuclear Research Centre, Boeretang 200, B-2400 Mol (Belgium)

    2010-10-11

    In experiments searching for neutrinoless double {beta}-decay high-purity Germanium detectors enriched in {sup 76}Ge will be used. Due to the nature of these experiments the isotopic composition of the enriched germanium is an important parameter. In order to determine the {sup 76}Ge/{sup 74}Ge isotopic ratio in this new material, but also in natural and depleted samples, the feasibility of using k{sub 0}- and relative standardisation neutron activation analysis for the determination of isotopic ratios was investigated. The paper will discuss the accuracy and the estimated uncertainty of both methods in general. It was found that both techniques are useful for the determination of isotopic ratios. The analysis also demonstrated that the k{sub 0}-data for Ge should be re-evaluated.

  16. Enhancement of electromagnetic showers initiated by ultrarelativistic electrons in aligned thick germanium crystals

    Science.gov (United States)

    Baurichter, A.; Mikkelsen, U.; Kirsebom, K.; Medenwaldt, R.; Møller, S.; Uggerhøj, E.; Worm, T.; Elsener, K.; Ballestrero, S.; Sona, P.; Romano, J.; Biino, C.; Moore, R.; Vilakazi, Z. Z.

    1996-10-01

    The distribution of the energy deposited in thin silicon detectors placed on the downstream side of a thick germanium single crystal bombarded with a 70, 150 and 250 GeV electron beam along directions close to the axis or {110} and {100} planes has been measured. The enhancement of the shower with respect to random incidence, as reflected in the higher value of the centroid of the distribution, is studied as a function of the incidence angle to the axis or plane.

  17. Reaction studies of hot silicon and germanium radicals. Progress report, September 1, 1978-August 31, 1979

    International Nuclear Information System (INIS)

    The experimental approach to attaining the goals of this research program is briefly outlined and the progress made in the last year is reviewed in sections entitled: (a) Primary steps in the reaction of recoiling silicon and germanium atoms and the identification of reactive intermediates; (b) Thermally induced silylene and germylene reactions; (c) Silicon free radical chemistry; (d) The role of ionic reactions in the chemistry of recoiling silicon atoms

  18. Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

    Science.gov (United States)

    Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovanni; Sakat, Emilie; Pellegrini, Giovanni; Biagioni, Paolo; Bollani, Monica; Napolitani, Enrico; Manganelli, Costanza; Virgilio, Michele; Grupp, Alexander; Fischer, Marco P.; Brida, Daniele; Gallacher, Kevin; Paul, Douglas J.; Baldassarre, Leonetta; Calvani, Paolo; Giliberti, Valeria; Nucara, Alessandro; Ortolani, Michele

    2016-08-01

    Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in the 5 to 50 μ m wavelength range at least. In this work, we investigate the electrodynamics of heavily n -type-doped germanium epilayers at infrared frequencies beyond the assumptions of the Drude model. The films are grown on silicon and germanium substrates, are in situ doped with phosphorous in the 1017 to 1019 cm-3 range, then screened plasma frequencies in the 100 to 1200 cm-1 range were observed. We employ infrared spectroscopy, pump-probe spectroscopy, and dc transport measurements to determine the tunability of the plasma frequency. Although no plasmonic structures have been realized in this work, we derive estimates of the decay time of mid-infrared plasmons and of their figures of merit for field confinement and for surface plasmon propagation. The average electron scattering rate increases almost linearly with excitation frequency, in agreement with quantum calculations based on a model of the ellipsoidal Fermi surface at the conduction band minimum of germanium accounting for electron scattering with optical phonons and charged impurities. Instead, we found weak dependence of plasmon losses on neutral impurity density. In films where a transient plasma was generated by optical pumping, we found significant dependence of the energy relaxation times in the few-picosecond range on the static doping level of the film, confirming the key but indirect role played by charged impurities in energy relaxation. Our results indicate that underdamped mid-infrared plasma oscillations are attained in n -type-doped germanium at room temperature.

  19. Neutrino and dark matter physics with sub-keV germanium detectors

    Indian Academy of Sciences (India)

    Arun Kumar Soma; Lakhwinder Singh; Manoj Kumar Singh; Venktesh Singh; Henry T Wong; on behalf of the TEXONO Collaboration

    2014-11-01

    Germanium detectors with sub-keV sensitivities open a window to study neutrino physics to search for light weakly interacting massive particle (WIMP) dark matter. We summarize the recent results on spin-independent couplings of light WIMPs from the TEXONO experiment at the Kuo-Sheng Reactor Neutrino Laboratory. Highlights of the physics motivation, our R&D programme, as well as the status and plans are presented.

  20. Nanorods of Silicon and Germanium with Well-Defined Shapes and Sizes

    Energy Technology Data Exchange (ETDEWEB)

    Slavi C. Sevov

    2012-05-03

    We have made number of important discoveries along the major goals of the project, namely i) electrodeposition of germanium thin films from clusters, ii) synthesis of cluster-based surfactants with long hydrocarbon chains and micelles made of them, iii) grafting of Ge{sub 9}-clusters onto self assembled films of siloxanes attached to glass substrates, iv) doping of Ge{sub 9}-clusters, and v) expanding the clusters to ten-atom cages of Ge{sub 10}{sup 2-}.

  1. A Segmented, Enriched N-type Germanium Detector for Neutrinoless Double Beta-Decay Experiments

    OpenAIRE

    Leviner, L. E.; Aalseth, C. E.; Ahmed, M. W.; Avignone III, F. T.; Back, H. O.; Barabash, A. S.; Boswell, M.(Los Alamos National Laboratory, Los Alamos, NM 87545, USA); L. De Braeckeleer(Washington U., Seattle); Brudanin, V. B.; Chan, Y-D.; Egorov, V. G.; Elliott, S. R.; Gehman, V. M.; Hossbach, T. W.; Kephart, J. D.

    2013-01-01

    We present data characterizing the performance of the first segmented, N-type Ge detector, isotopically enriched to 85% $^{76}$Ge. This detector, based on the Ortec PT6x2 design and referred to as SEGA (Segmented, Enriched Germanium Assembly), was developed as a possible prototype for neutrinoless double beta-decay measurements by the {\\sc Majorana} collaboration. We present some of the general characteristics (including bias potential, efficiency, leakage current, and integral cross-talk) fo...

  2. MATHEMATICAL MODELING OF THE DISSOLUTION PROCESS OF SILICON INTO GERMANIUM MELT

    OpenAIRE

    , Mahfoud Kadja

    2011-01-01

    Numerical simulations were carried out to study the thermosolutal and flow structures observed in the dissolution experiments of silicon into a germanium melt. The dissolution experiments utilized a material configuration similar to that used in the Liquid Phase Diffusion (LPD) and Melt-Replenishment Czochralski (Cz) crystal growth systems. In the present model, the computational domain was assumed axisymmetric. Governing equations of the liquid phase (Si-Ge mixture), namely the equations of ...

  3. Enhanced nonlinearity in photonic crystal fiber by germanium doping in the core region

    Institute of Scientific and Technical Information of China (English)

    Tingting Sun; Guiyun Kai; Zhi Wang; Shuzhong Yuan; Xiaoyi Dong

    2008-01-01

    Germanium doping in silica can be used as a method for nonlinearity enhancement.Properties of the enhanced nonlinearity in photonic crystal fiber(PCF)with a GeO2-doped core are investigated theoretically by using all-vector finite element method.Numerical result shows that the nonlinear coefficient of PCF is greatly enhanced with increasing doping concentration,furthermore,optimal radius of the doped region should be considered for the desired operating wavelength.

  4. Transient response in doped germanium photoconductors under very low background operation

    OpenAIRE

    Church, S. E.; Price, M.C.; Haegel, N. M.; Griffin, M. J.; Ade, P.A.R.

    1996-01-01

    Doped germanium photoconductors are the most sensitive detectors for astronomy in the wavelength range 40–240 μm. Under the extremely low background conditions encountered in cooled satellite instruments, these devices exhibit a number of transient effects, such as slow relaxation after a step change in illumination or bias, and spontaneous spiking at high signal levels. Such behavior can degrade the excellent instantaneous sensitivity of these detectors and create calibration uncertainties. ...

  5. Performance Analysis of Silicon and Germanium Nanowire Transistor using Crystal Orientation and Oxide Thickness

    OpenAIRE

    P.Theres Mary; N.B. BALAMURUGAN

    2014-01-01

    Nanowire Transistors have attracted attention due to the probable high performance and excellent controllability of device current. In this paper, we investigate the performance analysis of nanowire transistors made of silicon and germanium materials. The nanowire transistor has a 3D distribution of electron density and electrostatic potential, therefore self-consistent 3D simulations are used. Nanowire (tool) is 3D Poisson self-consistent simulator which can study the 3D transport in nanowir...

  6. Importance of frequency-dependent grain boundary scattering in nanocrystalline silicon and silicon-germanium thermoelectrics

    OpenAIRE

    Hua, Chengyun; Minnich, Austin J.

    2014-01-01

    Nanocrystalline silicon and silicon-germanium alloys are promising thermoelectric materials that have achieved substantially improved figure of merits compared to their bulk counterparts. This enhancement is typically attributed to a reduction in lattice thermal conductivity by phonon scattering at grain boundaries. However, further improvements are difficult to achieve because grain boundary scattering is poorly understood, with recent experimental observations suggesting that the phonon tra...

  7. High-purity germanium detector ionization pulse shapes of nuclear recoils, gamma interactions and microphonism

    OpenAIRE

    Baudis, L.; Hellmig, J.; Klapdor-Kleingrothaus, H. V.; Ramachers, Y.; Hammer, J. W.; Mayer, A.

    1999-01-01

    Nuclear recoil measurements with high-purity Germanium detectors are very promising to directly detect dark matter candidates. The main background sources in such experiments are natural radioactivity and microphonic noise. Digital pulse shape analysis is an encouraging approach to reduce the background originating from the latter. To study the pulse shapes of nuclear recoil events we performed a neutron scattering experiment, which covered the ionization energy range from 20 to 80 keV. We ha...

  8. Imaging the oblique propagation of electrons in germanium crystals at low temperature and low electric field

    International Nuclear Information System (INIS)

    Excited electrons in the conduction band of germanium collect into four energy minima, or valleys, in momentum space. These local minima have highly anisotropic mass tensors which cause the electrons to travel in directions which are oblique to an applied electric field at sub-Kelvin temperatures and low electric fields, in contrast to the more isotropic behavior of the holes. This experiment produces a full two-dimensional image of the oblique electron and hole propagation and the quantum transitions of electrons between valleys for electric fields oriented along the [0,0,1] direction. Charge carriers are excited with a focused laser pulse on one face of a germanium crystal and then drifted through the crystal by a uniform electric field of strength between 0.5 and 6 V/cm. The pattern of charge density arriving on the opposite face is used to reconstruct the trajectories of the carriers. Measurements of the two-dimensional pattern of charge density are compared in detail with Monte Carlo simulations developed for the Cryogenic Dark Matter Search (SuperCDMS) to model the transport of charge carriers in high-purity germanium detectors

  9. The CDEX-1 1 kg Point-Contact Germanium Detector for Low Mass Dark Matter Searches

    CERN Document Server

    Kang, Ke-Jun; Wu, Yu-Cheng; Cheng, Jian-Ping; Li, Yuan-Jing; Bai, Yang; Bi, Yong; Chang, Jian-Ping; Chen, Nan; Chen, Ning; Chen, Qing-Hao; Chen, Yun-Hua; Chuang, You-Chun; Dend, Zhi; Du, Qiang; Gong, Hui; Hao, Xi-Qing; He, Qing-Ju; Hu, Xin-Hui; Huang, Han-Xiong; Huang, Teng-Rui; Jiang, Hao; Li, Hau-Bin; Li, Jian-Min; Li, Jin; Li, Jun; Li, Xia; Li, Xin-Ying; Li, Xue-Qian; Li, Yu-Lan; Liao, Heng-Ye; Lin, Fong-Kay; Lin, Shin-Ted; Liu, Shu-Kui; Lv, Lan-Chun; Ma, Hao; Mao, Shao-Ji; Qin, Jian-Qiang; Ren, Jie; Ren, Jing; Ruan, Xi-Chao; Shen, Man-Bin; Singh, Lakhwinder; Singh, Manoj Kumar; Soma, Arun Kumar; Su, Jian; Tang, Chang-Jian; Tseng, Chao-Hsiung; Wang, Ji-Min; Wang, Li; Wang, Qing; Wong, Tsz-King Henry; Wu, Shi-Yong; Wu, Wei; Xing, Hao-Yang; Xu, Yin; Xue, Tao; Yang, Li-Tao; Yang, Song-Wei; Yi, Nan; Yu, Chun-Xu; Yu, Hao; Yu, Xun-Zhen; Zeng, Xiong-Hui; Zeng, Zhi; Zhang, Lan; Zhang, Yun-Hua; Zhao, Ming-Gang; Zhao, Wei; Zhong, Su-Ning; Zhou, Zu-Ying; Zhu, Jing-Jun; Zhu, Wei-Bin; Zhu, Xue-Zhou; Zhu, Zhong-Hua

    2013-01-01

    The CDEX Collaboration has been established for direct detection of light dark matter particles, using ultra-low energy threshold p-type point-contact germanium detectors, in China JinPing underground Laboratory (CJPL). The first 1 kg point-contact germanium detector with a sub-keV energy threshold has been tested in a passive shielding system located in CJPL. The outputs from both the point-contact p+ electrode and the outside n+ electrode make it possible to scan the lower energy range of less than 1 keV and at the same time to detect the higher energy range up to 3 MeV. The outputs from both p+ and n+ electrode may also provide a more powerful method for signal discrimination for dark matter experiment. Some key parameters, including energy resolution, dead time, decay times of internal X-rays, and system stability, have been tested and measured. The results show that the 1 kg point-contact germanium detector, together with its shielding system and electronics, can run smoothly with good performances. This...

  10. Internal friction in intrinsic and n-type germanium and silicon

    Science.gov (United States)

    Gerk, A. P.; Williams, Wendell S.

    1982-05-01

    The dependence of the high-temperature internal friction of germanium and silicon, both intrinsic and highly n type, was measured as a function of temperature, frequency, dislocation density, and dopant concentration. An acoustoelectric peak in both germanium and silicon was detected and found to agree well with the theory of Weinreich. The high-temperature dislocation-dependent damping in intrinsic germanium and silicon was studied and seen to be consistent with most previous studies. If deformed at high temperature and allowed to anneal, highly doped n-type material behaved intrinsically due to preferential precipitation at dislocations; however, if deformed at moderate temperatures and not allowed to anneal, such crystals exhibited a greatly enhanced dislocation-dependent internal friction which depended on the extrinsic carrier concentration. A theory was developed for dislocation damping in semiconductors and was found to agree well with experimental results. The model is based upon electronic viscous damping of dislocations by excess current carriers whose lifetimes are controlled by Auger recombination processes.

  11. Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium.

    Science.gov (United States)

    Sigillito, A J; Jock, R M; Tyryshkin, A M; Beeman, J W; Haller, E E; Itoh, K M; Lyon, S A

    2015-12-11

    Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times (T_{2}) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has nonmagnetic isotopes so it is expected to support long T_{2}'s while offering some new properties. Compared to Si, Ge has a strong spin-orbit coupling, large electron wave function, high mobility, and highly anisotropic conduction band valleys which will all give rise to new physics. In this Letter, the first pulsed electron spin resonance measurements of T_{2} and the spin-lattice relaxation (T_{1}) times for ^{75}As and ^{31}P donors in natural and isotopically enriched germanium are presented. We compare samples with various levels of isotopic enrichment and find that spectral diffusion due to ^{73}Ge nuclear spins limits the coherence in samples with significant amounts of ^{73}Ge. For the most highly enriched samples, we find that T_{1} limits T_{2} to T_{2}=2T_{1}. We report an anisotropy in T_{1} and the ensemble linewidths for magnetic fields oriented along different crystal axes but do not resolve any angular dependence to the spectral-diffusion-limited T_{2} in samples with ^{73}Ge. PMID:26705654

  12. An aluminum-germanium eutectic structure for silicon wafer bonding technology

    Science.gov (United States)

    Perez-Quintana, I.; Ottaviani, G.; Tonini, R.; Felisari, L.; Garavaglia, M.; Oggioni, L.; Morin, D.

    2005-08-01

    An aluminum-germanium eutectic bonding technology has been used to uniformly bond two silicon wafers for MEMS packaging at temperatures as low as 450 °C, well below the aluminum-silicon eutectic temperature (577 °C). A device silicon wafer has been put in contact with a cap wafer where an aluminum film covered by a germanium film has been thermally evaporated. The annealing has been performed in a vacuum furnace under uniaxial pressure variable from 1.8 up to 30 kbar. The samples have been analyzed with various analytical techniques. 4He+ MeV Rutherford Backscattering Spectrometry (RBS) has been used to measure the thicknesses of the deposited films and to follow the aluminum-germanium intermixing, Scanning Acoustic Microscope (SAM) to control the uniformity of the bonding, Scanning Electron Microscope (SEM) associated with electron induced X-ray fluorescence to analyze composition, morphology and elements distribution in the film between the two bonded wafers. The temperatures for the annealing were selected above and below the Ge-Al the eutectic temperature. At temperatures below the eutectic no-bonding has been obtained for any applied pressure. Above the eutectic bonding occurs. The formation of a liquid film is mandatory to obtain a reproducible and robust bonding. The pressure is necessary to improve the contacts between the two wafers; its role in the metallurgy of the bonding needs to be explored.

  13. Effect of normal processes on thermal conductivity of germanium, silicon and diamond

    Indian Academy of Sciences (India)

    Banashree Saikai; Anil Kumar

    2008-07-01

    The effect of normal scattering processes is considered to redistribute the phonon momentum in (a) the same phonon branch – KK-S model and (b) between different phonon branches – KK-H model. Simplified thermal conductivity relations are used to estimate the thermal conductivity of germanium, silicon and diamond with natural isotopes and highly enriched isotopes. It is observed that the consideration of the normal scattering processes involving different phonon branches gives better results for the temperature dependence of the thermal conductivity of germanium, silicon and diamond with natural and highly enriched isotopes. Also, the estimation of the lattice thermal conductivity of germanium and silicon for these models with the consideration of quadratic form of frequency dependences of phonon wave vector leads to the conclusion that the splitting of longitudinal and transverse phonon modes, as suggested by Holland, is not an essential requirement to explain the entire temperature dependence of lattice thermal conductivity whereas KK-H model gives a better estimation of the thermal conductivity without the splitting of the acoustic phonon modes due to the dispersive nature of the phonon dispersion curves.

  14. Imaging the oblique propagation of electrons in germanium crystals at low temperature and low electric field

    Energy Technology Data Exchange (ETDEWEB)

    Moffatt, R. A., E-mail: rmoffatt@stanford.edu; Cabrera, B.; Corcoran, B. M.; Kreikebaum, J. M.; Redl, P.; Shank, B.; Yen, J. J. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Young, B. A. [Department of Physics, Stanford University, Stanford, California 94305 (United States); Department of Physics, Santa Clara University, Santa Clara, California 95053 (United States); Brink, P. L.; Cherry, M.; Tomada, A. [SLAC National Accelerator Facility, Menlo Park, California 94025 (United States); Phipps, A.; Sadoulet, B.; Sundqvist, K. M. [Department of Physics, University of California, Berkeley, California 94720 (United States)

    2016-01-11

    Excited electrons in the conduction band of germanium collect into four energy minima, or valleys, in momentum space. These local minima have highly anisotropic mass tensors which cause the electrons to travel in directions which are oblique to an applied electric field at sub-Kelvin temperatures and low electric fields, in contrast to the more isotropic behavior of the holes. This experiment produces a full two-dimensional image of the oblique electron and hole propagation and the quantum transitions of electrons between valleys for electric fields oriented along the [0,0,1] direction. Charge carriers are excited with a focused laser pulse on one face of a germanium crystal and then drifted through the crystal by a uniform electric field of strength between 0.5 and 6 V/cm. The pattern of charge density arriving on the opposite face is used to reconstruct the trajectories of the carriers. Measurements of the two-dimensional pattern of charge density are compared in detail with Monte Carlo simulations developed for the Cryogenic Dark Matter Search (SuperCDMS) to model the transport of charge carriers in high-purity germanium detectors.

  15. Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition.

    Science.gov (United States)

    Lin, Edward L; Edmondson, Bryce I; Hu, Shen; Ekerdt, John G

    2016-01-01

    Atomic layer deposition (ALD) is a commercially utilized deposition method for electronic materials. ALD growth of thin films offers thickness control and conformality by taking advantage of self-limiting reactions between vapor-phase precursors and the growing film. Perovskite oxides present potential for next-generation electronic materials, but to-date have mostly been deposited by physical methods. This work outlines a method for depositing SrTiO3 (STO) on germanium using ALD. Germanium has higher carrier mobilities than silicon and therefore offers an alternative semiconductor material with faster device operation. This method takes advantage of the instability of germanium's native oxide by using thermal deoxidation to clean and reconstruct the Ge (001) surface to the 2×1 structure. 2-nm thick, amorphous STO is then deposited by ALD. The STO film is annealed under ultra-high vacuum and crystallizes on the reconstructed Ge surface. Reflection high-energy electron diffraction (RHEED) is used during this annealing step to monitor the STO crystallization. The thin, crystalline layer of STO acts as a template for subsequent growth of STO that is crystalline as-grown, as confirmed by RHEED. In situ X-ray photoelectron spectroscopy is used to verify film stoichiometry before and after the annealing step, as well as after subsequent STO growth. This procedure provides framework for additional perovskite oxides to be deposited on semiconductors via chemical methods in addition to the integration of more sophisticated heterostructures already achievable by physical methods. PMID:27501462

  16. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

    2013-12-02

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

  17. Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Li-Wei; Chang, Chun-Yen [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Tu, Chun-Hao; Wang, Pai-Syuan [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300, Taiwan (China); Lin, Chao-Cheng [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, 310, Taiwan (China); Chen, Min-Chen [Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin [Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Chen, Shih-Ching [Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan (China); Chen, Shih-Cheng [Department of Electrical Engineering and Institute of Electronic Engineering, National Tsing Hua University, Hsinchu, 310, Taiwan (China)

    2011-11-30

    Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 Degree-Sign C, and separated well at 600 Degree-Sign C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 Degree-Sign C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 Degree-Sign C annealing. The electrical characteristics of data retention in the sample with the 600 Degree-Sign C annealing exhibited better performance than the 500 Degree-Sign C-annealed sample, a result associated with the better separation and better crystallization of the NC structures.

  18. Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium

    Science.gov (United States)

    Sigillito, A. J.; Jock, R. M.; Tyryshkin, A. M.; Beeman, J. W.; Haller, E. E.; Itoh, K. M.; Lyon, S. A.

    2015-12-01

    Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times (T2 ) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has nonmagnetic isotopes so it is expected to support long T2's while offering some new properties. Compared to Si, Ge has a strong spin-orbit coupling, large electron wave function, high mobility, and highly anisotropic conduction band valleys which will all give rise to new physics. In this Letter, the first pulsed electron spin resonance measurements of T2 and the spin-lattice relaxation (T1) times for 75As and 31P donors in natural and isotopically enriched germanium are presented. We compare samples with various levels of isotopic enrichment and find that spectral diffusion due to 73Ge nuclear spins limits the coherence in samples with significant amounts of 73Ge. For the most highly enriched samples, we find that T1 limits T2 to T2=2 T1. We report an anisotropy in T1 and the ensemble linewidths for magnetic fields oriented along different crystal axes but do not resolve any angular dependence to the spectral-diffusion-limited T2 in samples with 73Ge.

  19. Study of adsorption of germanium on β-SnO2 sorbent

    International Nuclear Information System (INIS)

    Full text: Tin dioxide (β -SnO2) is used as adsorbent for preparation of 68Ga generator. Commercial adsorbent of β -SnO2 is a little available and rare reagent. At present the only firm 'Carlo-Erba' (Italy) is its producer. Therefore we tried to prepare this adsorbent and to study of adsorption of germanium on the obtained β -SnO2. The main objective was to obtain good adsorption performance towards germanium. Another important feature is the separation of gallium from germanium to find best conditions for separation of the pair elements. The radioactive tracer technique was used for determination of the distributions coefficients (KD). Both 77Ge and 72Ga radionuclides were produced by irradiation of pure metals in WWR-SM nuclear reactor at a thermal neutron flux of 5 x 1013 n/cm2/s for 20-24 hours. The dissolution of the metal tin in concentrated nitric acid was used for preparation of β-SnO2. It is shown that the adsorption properties of β-SnO2 greatly depended on conditions of treatment after dissolution of tin. Extremely high distribution coefficients for 77Ge radionuclide and the more high separation factor of Ge-Ga were achieved in 1 M HCl for β -SnO2 sample dried at 180-200o C. Adsorption of germanium was quantitative (99.5-99.7 %) from hydrochloric acid solutions (0.1-1.4 M). The dynamic capacity before the breakthrough of germanium was 20 mg of Ge per gram of β -SnO2. The obtained adsorbent β-SnO2 was tested for separation of 68Ge-68Ga radionuclide chain. The optimal separation of the daughter 68Ga from parent 68Ge can be achieved by using 1 M HCl as eluent. It is shown that the tin dioxide - 1 M HCl generator system provides high yields of 68Ga (75-80%) with low levels of breakthrough of 68Ge (2 x10-4%)

  20. Carbon nanotube nanoelectrode arrays

    Science.gov (United States)

    Ren, Zhifeng; Lin, Yuehe; Yantasee, Wassana; Liu, Guodong; Lu, Fang; Tu, Yi

    2008-11-18

    The present invention relates to microelectode arrays (MEAs), and more particularly to carbon nanotube nanoelectrode arrays (CNT-NEAs) for chemical and biological sensing, and methods of use. A nanoelectrode array includes a carbon nanotube material comprising an array of substantially linear carbon nanotubes each having a proximal end and a distal end, the proximal end of the carbon nanotubes are attached to a catalyst substrate material so as to form the array with a pre-determined site density, wherein the carbon nanotubes are aligned with respect to one another within the array; an electrically insulating layer on the surface of the carbon nanotube material, whereby the distal end of the carbon nanotubes extend beyond the electrically insulating layer; a second adhesive electrically insulating layer on the surface of the electrically insulating layer, whereby the distal end of the carbon nanotubes extend beyond the second adhesive electrically insulating layer; and a metal wire attached to the catalyst substrate material.

  1. Pacific Array (Transportable Broadband Ocean Floor Array)

    Science.gov (United States)

    Kawakatsu, Hitoshi; Ekstrom, Goran; Evans, Rob; Forsyth, Don; Gaherty, Jim; Kennett, Brian; Montagner, Jean-Paul; Utada, Hisashi

    2016-04-01

    Based on recent developments on broadband ocean bottom seismometry, we propose a next generation large-scale array experiment in the ocean. Recent advances in ocean bottom broadband seismometry1, together with advances in the seismic analysis methodology, have enabled us to resolve the regional 1-D structure of the entire lithosphere/asthenosphere system, including seismic anisotropy (azimuthal, and hopefully radial), with deployments of ~15 broadband ocean bottom seismometers (BBOBSs). Having ~15 BBOBSs as an array unit for a 2-year deployment, and repeating such deployments in a leap-frog way or concurrently (an array of arrays) for a decade or so would enable us to cover a large portion of the Pacific basin. Such efforts, not only by giving regional constraints on the 1-D structure beneath Pacific ocean, but also by sharing waveform data for global scale waveform tomography, would drastically increase our knowledge of how plate tectonics works on this planet, as well as how it worked for the past 150 million years. International collaborations is essential: if three countries/institutions participate this endeavor together, Pacific Array may be accomplished within five-or-so years.

  2. Telescope Array Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Kawai, H.; Yoshida, S. [Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba, 263-8522 (Japan); Yoshii, H. [Ehime University, 2-5 Bunkyo-cho, Matsuyama, Ehime, 790-8577 (Japan); Tanaka, K. [Hiroshinma City University, 3-4-1 Ozuka-Higashi, Asa-Minami-ku, Hiroshima, 731-3194 (Japan); Cohen, F.; Fukushima, M.; Hayashida, N.; Hiyama, K.; Ikeda, D.; Kido, E.; Kondo, Y.; Nonaka, T.; Ohnishi, M.; Ohoka, H.; Ozawa, S.; Sagawa, H.; Sakurai, N.; Shibata, T.; Shimodaira, H.; Takeda, M. [ICRR, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8582 (Japan)] (and others)

    2008-01-15

    The TA observatory is a hybrid detector system consisting of both a surface detector array as well as a set of fluorescence detectors. The observatory will measure the energy spectrum, anisotropy and composition of ultra-high energy cosmic rays. The surface detectors are being deployed and the array should be complete by the end of February, 2007. We will soon be collecting hybrid data at the Telecope Array.

  3. Integrated avalanche photodiode arrays

    Energy Technology Data Exchange (ETDEWEB)

    Harmon, Eric S.

    2015-07-07

    The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

  4. Analysis of the dead layer of a detector of germanium with code ultrapure Monte Carlo SWORD-GEANT; Analisis del dead layer de un detector de germanio ultrapuro con el codigo de Monte Carlo SWORDS-GEANT

    Energy Technology Data Exchange (ETDEWEB)

    Gallardo, S.; Querol, A.; Ortiz, J.; Rodenas, J.; Verdu, G.

    2014-07-01

    In this paper the use of Monte Carlo code SWORD-GEANT is proposed to simulate an ultra pure germanium detector High Purity Germanium detector (HPGe) detector ORTEC specifically GMX40P4, coaxial geometry. (Author)

  5. Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, Hossein, E-mail: h.jamali@mut-es.ac.ir; Mozafarinia, Reza; Eshaghi, Akbar

    2015-10-15

    Germanium-carbon coatings were deposited on silicon and glass substrates by plasma enhanced chemical vapor deposition (PECVD) using three different flow ratios of GeH{sub 4} and CH{sub 4} precursors. Elemental analysis, structural evaluation and microscopic investigation of coatings were performed using laser-induced breakdown spectroscopy (LIBS), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. Based on the results, the coatings exhibited a homogeneous and dense structure free of pores with a very good adhesion to substrate. The structural evaluation revealed that the germanium-carbon coatings were a kind of a Ge-rich composite material containing the amorphous and crystalline germanium and amorphous carbon with the mixture of Ge–Ge, Ge–C, C–C, Ge–H and C–H bonds. The result suggested that the amorphisation of the coatings could be increased with raising CH{sub 4}:GeH{sub 4} flow rate ratio and subsequently increasing C amount incorporated into the coating. - Highlights: • Germanium-carbon coatings were prepared by PECVD technique. • The germanium-carbon coatings were a kind of composite material. • The amorphisation of the coatings were increased with raising CH{sub 4}:GeH{sub 4} flow ratio.

  6. Methods to improve and understand the sensitivity of high purity germanium detectors for searches of rare events

    International Nuclear Information System (INIS)

    Observation of neutrinoless double beta-decay could answer fundamental questions on the nature of neutrinos. High purity germanium detectors are well suited to search for this rare process in germanium. Successful operation of such experiments requires a good understanding of the detectors and the sources of background. Possible background sources not considered before in the presently running GERDA high purity germanium detector experiment were studied. Pulse shape analysis using artificial neural networks was used to distinguish between signal-like and background-like events. Pulse shape simulation was used to investigate systematic effects influencing the efficiency of the method. Possibilities to localize the origin of unwanted radiation using Compton back-tracking in a granular detector system were examined. Systematic effects in high purity germanium detectors influencing their performance have been further investigated using segmented detectors. The behavior of the detector response at different operational temperatures was studied. The anisotropy effects due to the crystallographic structure of germanium were facilitated in a novel way to determine the orientation of the crystallographic axes.

  7. Methods to improve and understand the sensitivity of high purity germanium detectors for searches of rare events

    Energy Technology Data Exchange (ETDEWEB)

    Volynets, Oleksandr

    2012-07-27

    Observation of neutrinoless double beta-decay could answer fundamental questions on the nature of neutrinos. High purity germanium detectors are well suited to search for this rare process in germanium. Successful operation of such experiments requires a good understanding of the detectors and the sources of background. Possible background sources not considered before in the presently running GERDA high purity germanium detector experiment were studied. Pulse shape analysis using artificial neural networks was used to distinguish between signal-like and background-like events. Pulse shape simulation was used to investigate systematic effects influencing the efficiency of the method. Possibilities to localize the origin of unwanted radiation using Compton back-tracking in a granular detector system were examined. Systematic effects in high purity germanium detectors influencing their performance have been further investigated using segmented detectors. The behavior of the detector response at different operational temperatures was studied. The anisotropy effects due to the crystallographic structure of germanium were facilitated in a novel way to determine the orientation of the crystallographic axes.

  8. Characterization of segmented large volume, high purity germanium detectors

    International Nuclear Information System (INIS)

    γ-ray tracking in future HPGe arrays like AGATA will rely on pulse shape analysis (PSA) of multiple γ-interactions. For this purpose, a simple and fast procedure was developed which enabled the first full characterization of a segmented large volume HPGe detector. An analytical model for the hole mobility in a Ge crystal lattice was developed to describe the hole drift anisotropy with experimental velocity values along the crystal axis as parameters. The new model is based on the drifted Maxwellian hole distribution in Ge. It is verified by reproducing successfully experimental longitudinal hole anisotropy data. A comparison between electron and hole mobility shows large differences for the longitudinal and tangential velocity anisotropy as a function of the electrical field orientation. Measurements on a 12 fold segmented, n-type, large volume, irregular shaped HPGe detector were performed in order to determine the parameters of anisotropic mobility for electrons and holes as charge carriers created by γ-ray interactions. To characterize the electron mobility the complete outer detector surface was scanned in small steps employing photopeak interactions at 60 keV. A precise measurement of the hole drift anisotropy was performed with 356 keV rays. The drift velocity anisotropy and crystal geometry cause considerable rise time differences in pulse shapes depending on the position of the spatial charge carrier creation. Pulse shapes of direct and transient signals are reproduced by weighting potential calculations with high precision. The measured angular dependence of rise times is caused by the anisotropic mobility, crystal geometry, changing field strength and space charge effects. Preamplified signals were processed employing digital spectroscopy electronics. Response functions, crosstalk contributions and averaging procedures were taken into account implying novel methods due to the segmentation of the Ge-crystal and the digital electronics. The results are

  9. Characterization of segmented large volume, high purity germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bruyneel, B. [Koeln Univ. (Germany). Inst. fuer Kernphysik

    2006-07-01

    {gamma}-ray tracking in future HPGe arrays like AGATA will rely on pulse shape analysis (PSA) of multiple {gamma}-interactions. For this purpose, a simple and fast procedure was developed which enabled the first full characterization of a segmented large volume HPGe detector. An analytical model for the hole mobility in a Ge crystal lattice was developed to describe the hole drift anisotropy with experimental velocity values along the crystal axis as parameters. The new model is based on the drifted Maxwellian hole distribution in Ge. It is verified by reproducing successfully experimental longitudinal hole anisotropy data. A comparison between electron and hole mobility shows large differences for the longitudinal and tangential velocity anisotropy as a function of the electrical field orientation. Measurements on a 12 fold segmented, n-type, large volume, irregular shaped HPGe detector were performed in order to determine the parameters of anisotropic mobility for electrons and holes as charge carriers created by {gamma}-ray interactions. To characterize the electron mobility the complete outer detector surface was scanned in small steps employing photopeak interactions at 60 keV. A precise measurement of the hole drift anisotropy was performed with 356 keV rays. The drift velocity anisotropy and crystal geometry cause considerable rise time differences in pulse shapes depending on the position of the spatial charge carrier creation. Pulse shapes of direct and transient signals are reproduced by weighting potential calculations with high precision. The measured angular dependence of rise times is caused by the anisotropic mobility, crystal geometry, changing field strength and space charge effects. Preamplified signals were processed employing digital spectroscopy electronics. Response functions, crosstalk contributions and averaging procedures were taken into account implying novel methods due to the segmentation of the Ge-crystal and the digital electronics

  10. Solar array deployment mechanism

    Science.gov (United States)

    Calassa, Mark C.; Kackley, Russell

    1995-05-01

    This paper describes a Solar Array Deployment Mechanism (SADM) used to deploy a rigid solar array panel on a commercial spacecraft. The application required a deployment mechanism design that was not only lightweight, but also could be produced and installed at the lowest possible cost. This paper covers design, test, and analysis of a mechanism that meets these requirements.

  11. Micromachined electrode array

    Energy Technology Data Exchange (ETDEWEB)

    Okandan, Murat (Edgewood, NM); Wessendorf, Kurt O. (Albuquerque, NM)

    2007-12-11

    An electrode array is disclosed which has applications for neural stimulation and sensing. The electrode array, in certain embodiments, can include a plurality of electrodes each of which is flexibly attached to a common substrate using a plurality of springs to allow the electrodes to move independently. In other embodiments of the electrode array, the electrodes can be fixed to the substrate. The electrode array can be formed from a combination of bulk and surface micromachining, and can include electrode tips having an electroplated metal (e.g. platinum, iridium, gold or titanium) or a metal oxide (e.g. iridium oxide) for biocompatibility. The electrode array can be used to form a part of a neural prosthesis, and is particularly well adapted for use in an implantable retinal prosthesis.

  12. Microfabricated ion trap array

    Science.gov (United States)

    Blain, Matthew G.; Fleming, James G.

    2006-12-26

    A microfabricated ion trap array, comprising a plurality of ion traps having an inner radius of order one micron, can be fabricated using surface micromachining techniques and materials known to the integrated circuits manufacturing and microelectromechanical systems industries. Micromachining methods enable batch fabrication, reduced manufacturing costs, dimensional and positional precision, and monolithic integration of massive arrays of ion traps with microscale ion generation and detection devices. Massive arraying enables the microscale ion traps to retain the resolution, sensitivity, and mass range advantages necessary for high chemical selectivity. The reduced electrode voltage enables integration of the microfabricated ion trap array with on-chip circuit-based rf operation and detection electronics (i.e., cell phone electronics). Therefore, the full performance advantages of the microfabricated ion trap array can be realized in truly field portable, handheld microanalysis systems.

  13. Study of high K isomers and shape coexistence in sup 1 sup 8 sup 8 Pb Nuclei; Germanium detector; RITU; JUROSPHERE

    CERN Document Server

    Moore, C J P

    2002-01-01

    An experiment was designed to produce sup 1 sup 8 sup 8 Pb nuclei using the sup 1 sup 5 sup 0 Sm( sup 4 sup 2 Ca,4n) sup 1 sup 8 sup 8 Pb reaction at an energy of 200 MeV. It was performed at the University of Jyvaeskylae, Finland, using the gas-filled recoil separator RITU with JUROSPHERE at the target position and an array of quadrant detectors around the implantation strip detector. There was also the GSI Super Clover germanium detector at the focal plane with its 4 crystals being treated as individual spectrometers. Using a prompt-delayed coincidence technique the gamma rays above a 1.2 mu s isomer can be elucidated by tagging on the subsequently delayed transitions. Transitions above this isomer have been discovered for the first time and a tentative decay scheme has been constructed. From gamma-ray intensities, (g sub K -g sub R)/Q sub 0 ratios have been calculated for this isomer and it has been allocated a nu left brace 9/2 sup + [624] x 7/2 sup - [514]right brace configuration with a spin and parity ...

  14. The MAJORANA DEMONSTRATOR: An R&D project towards a tonne-scale germanium neutrinoless double-beta decay search

    Energy Technology Data Exchange (ETDEWEB)

    Aalseth, Craig E; Amman, M; Amsbaugh, John F; Avignone, F. T.; Back, Henning O; Barabash, A; Barbeau, Phil; Beene, Jim; Bergevin, M; Bertrand, F; Boswell, M; Brudanin, V; Bugg, William; Burritt, Tom H; Chan, Yuen-Dat; Collar, J I; Cooper, R J; Creswick, R; Detwiler, Jason A; Doe, P J; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H; Elliott, Steven R; Ely, James H; Esterline, James H; Farach, H A; Fast, James E; Fields, N; Finnerty, P; Fujikawa, Brian; Fuller, Erin S; Gehman, Victor; Giovanetti, G K; Guiseppe, Vincente; Gusey, K; Hallin, A L; Hazama, R; Henning, Reyco; Hime, Andrew; Hoppe, Eric W; Hossbach, Todd W; Howe, M A; Johnson, R A; Keeter, K; Keillor, Martin E; Keller, C; Kephart, Jeremy D; Kidd, Mary; Kochetov, Oleg; Konovalov, S; Kouzes, Richard T; Lesko, Kevin; Leviner, L; Loach, J C; Luke, P; MacMullin, S; Marino, Michael G; Mei, Dong-Ming; Miley, Harry S; Miller, M; Mizouni, Leila K; Montoya, A; Myers, A W; Nomachi, Masaharu; Odom, Brian; Orrell, John L; Phillips, D; Poon, Alan; Prior, Gersende; Qian, J; Radford, D C; Rielage, Keith; Robertson, R G. H.; Rodriguez, Larry; Rykaczewski, Krzysztof P; Schubert, Alexis G; Shima, T; Shirchenko, M; Strain, J; Thomas, K; Thompson, Robert C; Timkin, V; Tornow, W; Van Wechel, T D; Vanyushin, I; Vetter, Kai; Warner, Ray A; Wilkerson, J; Wouters, Jan; Yakushev, E; Young, A; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C L; Zimmerman, S

    2009-12-17

    The MAJORANA collaboration is pursuing the development of the so-called MAJORANA DEMONSTRATOR. The DEMONSTRATOR is intended to perform research and development towards a tonne-scale germanium-based experiment to search for the neutrinoless double-beta decay of 76Ge. The DEMONSTRATOR can also perform a competitive direct dark matter search for light WIMPs in the 1-10GeV/c2 mass range. It will consist of approximately 60 kg. of germanium detectors in an ultra-low background shield located deep underground at the Sanford Underground Laboratory in Lead, SD. The DEMONSTRATOR will also perform background and technology studies, and half of the detector mass will be enriched germanium. This talk will review the motivation, design, technology and status of the Demonstrator.

  15. Structural and optical properties of 200 mm germanium-on-insulator (GeOI) substrates for silicon photonics applications

    Science.gov (United States)

    Reboud, Vincent; Widiez, Julie; Hartmann, Jean Michel; Osvaldo Dias, Guilherme; Fowler, Daivid; Chelnokov, Alexei; Gassenq, Alban; Guilloy, Kevin; Pauc, Nicolas; Calvo, Vincent; Geiger, Richard; Zabel, T.; Faist, Jérôme; Sigg, Hans

    2015-02-01

    Integrated laser sources compatible with microelectronics represent currently one of the main challenges for silicon photonics. Using the Smart CutTM technology, we have fabricated for the first time 200 mm optical Germanium-On-Insulator (GeOI) substrates which consist of a thick layer of germanium (typically greater than 500 nm) on top of a thick buried oxide layer (around 1 µm). From this, we fabricated suspended microbridges with efficient Bragg mirror cavities. The high crystalline quality of the Ge layer should help to avoid mechanical failure when fabricating suspended membranes with amounts of tensile strain high enough to transform Ge into a direct bandgap material. Optical GeOI process feasibility has successfully been demonstrated, opening the way to waferscale fabrication of new light emitting devices based on highly-tensely strained (thanks to suspended membranes) and/or doped germanium.

  16. A small diameter, flexible, all attitude, self-contained germanium spectrometer. Operator's manual

    International Nuclear Information System (INIS)

    The end of the Cold War has brought about tremendous changes in the nuclear complex of the Department of Energy. One of the many changes has been the shutdown or decommissioning of many facilities that performed nuclear work. One of the steps in the process of decommissioning a facility involves the decontamination or removal of drain lines or pipes that may have carried radioactive materials at one time. The removal of all these pipes and drain lines to a nuclear disposal facility could be quite costly. It was suggested by Pacific Northwest National Laboratory (PNNL) that a germanium spectrometer could be built that could fit through straight pipes with a diameter as small as 5.08 cm (2 inches) and pass through curved pipes with a diameter as small as 7.6 cm (3 inches) such as that of a 3-inch p-trap in a drain line. The germanium spectrometer could then be used to simultaneously determine all gamma-ray emitting radionuclides in or surrounding the pipe. By showing the absence of any gamma-ray emitting radionuclides, the pipes could then be reused in place or disposed of as non-radioactive material, thus saving significantly in disposal costs. A germanium spectrometer system has been designed by PNNL and fabricated by Princeton Gamma Tech (PGT) that consists of three segments, each 4.84 cm in diameter and about 10 cm in length. Flexible stainless steel bellows were used to connect the segments. Segment 1 is a small liquid nitrogen reservoir. The reservoir is filled with a sponge-like material which enables the detector to be used in any orientation. A Stirling cycle refrigerator is under development which can replace the liquid nitrogen reservoir to provide continuous cooling and operation

  17. Enhanced shower formation in aligned thick germanium crystals and discrimination against charged hadrons

    Science.gov (United States)

    Baurichter, A.; Kirsebom, K.; Medewaldt, R.; Mikkelsen, U.; Møller, S.; Uggerhøj, E.; Worm, T.; Elsener, K.; Ballestrero, S.; Sona, P.; Romano, J.

    1995-11-01

    The distribution of the energy released in a thin silicon detector placed on the downstream side of a thick germanium single crystal bombarded with a 150 GeV electron or pion beam along directions close to the axis or along random directions has been investigated. In view of a possible application to very high energy gamma ray astronomy and particle physics, the intrinsic capability of such a device to reject, on the basis of energy discrimination, unwanted events due to charged hadrons together with the resulting loss of efficiency for the detection of showers initiated by high energy electrons, is determined as a function of the chosen energy threshold.

  18. Advanced characterization of carrier profiles in germanium using micro-machined contact probes

    DEFF Research Database (Denmark)

    Clarysse, T.; Konttinen, M.; Parmentier, B.;

    2012-01-01

    The accurate determination of the sheet resistance and carrier depth profile, i.e. active dopant profile, of shallow junction isolated structures involving new high mobility materials, such as germanium, is a crucial topic for future CMOS development. In this work, we discuss the capabilities of...... use of only two probes, a spreading resistance like setup is obtained with small spacing and drastically reduced electrical contact radii (~10 nm) leading to a substantial reduction of the correction factors which are normally required for converting spreading resistance profiles. We demonstrate the...

  19. In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

    Energy Technology Data Exchange (ETDEWEB)

    Koleśnik-Gray, Maria M.; Krstić, Vojislav, E-mail: vojislav.krstic@fau.de [Department of Physics, Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Staudtstr. 7, 91058 Erlangen (Germany); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), and AMBER at CRANN, Trinity College Dublin, College Green, Dublin 2 (Ireland); School of Physics, Trinity College Dublin, College Green, Dublin 2 (Ireland); Sorger, Christian; Weber, Heiko B. [Department of Physics, Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nürnberg (FAU), Staudtstr. 7, 91058 Erlangen (Germany); Biswas, Subhajit; Holmes, Justin D. [Materials Chemistry and Analysis Group, Department of Chemistry, Tyndall Institute, University College Cork, Cork (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), and AMBER at CRANN, Trinity College Dublin, College Green, Dublin 2 (Ireland)

    2015-06-08

    We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.

  20. In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

    International Nuclear Information System (INIS)

    We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed

  1. Ion implanted N-type contract for high-purity germanium radiation detectors

    International Nuclear Information System (INIS)

    Thin large-area n+ contacts on high-purity germanium detectors have been produced by implantation of 25 keV phosphorous ions. The contacts show leakage current of less than 10-9 A up to fields of greater than 2000 V/cm. Unannealed lattice damage may still limit the maximum applied field, but proper surface treatment prior to implantation and subsequent annealing steps have resulted in a dramatic improvement in the applied field. Spectra are presented which demonstrate that the n+ window is thin and the spectrometer performance is excellent

  2. Experimental Search for Solar Axions via Coherent Primakoff Conversion in a Germanium Spectrometer

    CERN Document Server

    Avignone, F T; Brodzinski, R; Collar, J I; Creswick, R J; Di Gregorio, D E; Farach, H A; Gattone, A O; Guérard, C K; Hasenbalg, F; Huck, H; Miley, H S; Morales, A; Morales, J; Nussinov, S; De Solorzano, A O; Reeves, J H; Villar, J; Zioutas, Konstantin

    1998-01-01

    Results are reported of an experimental search for the unique, rapidly varying temporal pattern of solar axions coherently converting into photons via the Primakoff effect in a single crystal germanium detector. This conversion is predicted when axions are incident at a Bragg angle with a crystalline plane. The analysis of approximately 1.94 kg.yr of data from the 1 kg DEMOS detector in Sierra Grande, Argentina, yields a new laboratory bound on axion-photon coupling of $g_{a\\gamma \\gamma} < 2.7\\cdot 10^{-9}$ GeV$^{-1}$, independent of axion mass up to ~ 1 keV.

  3. Surface Passivation of Germanium Using NH3 Ambient in RTP for High Mobility MOS Structure

    OpenAIRE

    Anil G. Khairnar; Y.S. Mhaisagar; A.M. Mahajan

    2013-01-01

    Ge CMOS is very striking for the post Si-CMOS technology. However, we have to attempt a number of challenges with regard to materials and their interface control. In this paper we have investigated the control of the interfacial properties of SiO2 / Ge gate stack structures by the thermal nitridation technique. Structural and electrical properties of SiO2 gate-dielectric metal-oxide-semiconductor (MOS) capacitors deposited by sputtering on germanium are studied. The structural characterizatio...

  4. Evaluations of the commercial spectrometer systems for safeguards applications using the germanium detectors

    Energy Technology Data Exchange (ETDEWEB)

    Vo, D.T.

    1998-12-31

    Safeguards applications require the best spectrometer systems with excellent resolution, stability, and throughput. Instruments must perform well in all the situations and environments. Data communication to the computer should be convenient, fast, and reliable. The software should have all the necessary tools and be ease to use. Portable systems should be small in size, lightweight, and have a long battery life. Nine commercially available spectrometer systems are tested with both the planar and coaxial germanium detectors. Considering the performance of the Digital Signal Processors (DSP), digital-based spectroscopy may be the future of gamma-ray spectroscopy.

  5. Low-energy neutrino and dark matter physics with sub-keV germanium detectors

    Indian Academy of Sciences (India)

    A K Soma; L Singh; M K Singh; V Singh; H T Wong

    2012-11-01

    The TEXONO-CDEX Collaboration (Taiwan experiment on neutrino–China dark matter experiment) explores high-purity germanium (HPGe) detection technology to develop a sub-keV threshold detector for pursuing studies on low mass weakly interacting massive particles (WIMPs), properties of neutrino and the possibilities of neutrino-nucleus coherent scattering observation. This article will introduce the facilities of newly established China Jing-Ping Underground Laboratory (CJPL), preliminary result of cosmic ray background studies at CJPL, the dark matter studies pursued at Kuo-Sheng Neutrino Laboratory (KSNL) and research efforts to accomplish our physics goals.

  6. Design and Development of Binary Diffractive Germanium Lens by Thin Film Deposition

    Science.gov (United States)

    Alshami, M.; Wabby, A.; Mousselly, M. F.

    2015-11-01

    The design and development of infrared (λ: [8]-[12] μm) binary diffractive germanium lens (BDGL) by two - steps thin film deposition (Physical vapor deposition (PVD) technique) is presented. The optical design of the required elements using the optical design code Zemax, the design of the 4 steps binary surface and its required metallic masks using the programming language Delphi, the procedures of fabrication, and the measurement of the resulting profile, were presented. The comparison between the refractive/diffractive lenses by measuring the minimum resolvable temperature difference (MRTD) shows the advantages of binary diffractive surface.

  7. Formation and characterization of varied size germanium nanocrystals by electron microscopy, Raman spectroscopy, and photoluminescence

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Liu, Chuan;

    2011-01-01

    and crystallization. The samples of different size Ge nanocrystals embedded in the SiO2 matrix were characterized by Raman spectroscopy and photoluminescence. Interplayed size and strain effect of Ge nanocystals was demonstrated by Raman spectroscopy after excluding the thermal effect with proper excitation laser......Germanium nanocrystals are being extensively examined. Their unique optical properties (brought about by the quantum confinement effect) could potentially be applied in wide areas of nonlinear optics, light emission and solid state memory etc. In this paper, Ge nanocrystals embedded in a SiO2...

  8. Ultra-Low-Energy Germanium Detector for Neutrino-Nucleus Coherent Scattering and Dark Matter Searches

    CERN Document Server

    Wong, Henry T

    2008-01-01

    The status and plans of a research program on the development of ultra-low-energy germanium detectors with sub-keV sensitivities are reported. We survey the scientific goals which include the observation of neutrino-nucleus coherent scattering, the studies of neutrino magnetic moments, as well as the searches of WIMP dark matter. In particular, a threshold of 100-200 eV and a sub-keV background comparable to underground experiments were achieved with prototype detectors. New limits were set for WIMPs with mass between 3-6 GeV. The prospects of the realization of full-scale experiments are discussed.

  9. Final Report for Monitoring of Reactor Antineutrinos with Compact Germanium Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Orrell, John L.; Collar, J. I.

    2009-07-01

    This 2008 NCMR project has pursued measurement of the antineutrino-nucleus coherent scattering interaction using a low-energy threshold germanium gamma-ray spectrometer of roughly one-half kilogram total mass. These efforts support development of a compact system for monitoring the antineutrino emission from nuclear reactor cores. Such a monitoring system is relevant to nuclear safeguards and nuclear non-proliferation in general by adding a strong method for assuring quantitative material balance of special nuclear material in the nuclear fuel cycle used in electricity generation.

  10. Experiments towards size and dopant control of germanium quantum dots for solar applications

    OpenAIRE

    Brittany L. Oliva-Chatelain; Barron, Andrew R.

    2015-01-01

    While the literature for the doping of silicon quantum dots (QDs) and nanocrystals (NCs) is extensive, reports of doping their germanium analogs are sparse. We report a range of attempts to dope Ge QDs both during and post-synthesis. The QDs have been characterized by TEM, XPS, and I/V measurements of SiO2 coated QD thin films in test cells using doped Si substrates. The solution synthesis of Ge QDs by the reduction of GeCl4 with LiAlH4 results in Ge QDs with a low level of chlorine atoms on ...

  11. Synthesis and characterization of germanium monosulphide (GeS) single crystals grown using different transporting agents

    Indian Academy of Sciences (India)

    G K Solanki; Dipika B Patel; Sandip Unadkat; M K Agarwal

    2010-05-01

    This paper reports the growth of germanium monosulphide (GeS) single crystals by vapour phase technique using different transporting agents. The single crystallinity and composition of the grown crystals have been verified by transmission electron microscopy (TEM) and energy dispersive analysis of X-rays (EDAX) respectively. Resistivity measurements have been carried out in different temperature ranges. Transport parameters, e.g. resistivity, Hall coefficient, carrier concentration and mobility have been measured at varying magnetic fields. All the experimental results have been explained.

  12. Structural and optical properties of axial silicon-germanium nanowire heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.; Tsybeskov, L., E-mail: tsybesko@njit.edu [ECE Department, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States); Kamins, T. I. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Wu, X.; Lockwood, D. J. [National Research Council, Ottawa, Ontario K1A 0R6 (Canada)

    2015-12-21

    Detailed studies of the structural and optical properties of axial silicon-germanium nanowire heterojunctions show that despite the 4.2% lattice mismatch between Si and Ge they can be grown without a significant density of structural defects. The lattice mismatch induced strain is partially relieved due to spontaneous SiGe intermixing at the heterointerface during growth and lateral expansion of the Ge segment of the nanowire. The mismatch in Ge and Si coefficients of thermal expansion and low thermal conductivity of Si/Ge nanowire heterojunctions are proposed to be responsible for the thermally induced stress detected under intense laser radiation in photoluminescence and Raman scattering measurements.

  13. Diffusion of E centers in germanium predicted using GGA+U approach

    KAUST Repository

    Tahini, H. A.

    2011-08-17

    Density functional theory calculations (based on GGA+U approach) are used to investigate the formation and diffusion of donor-vacancy pairs (E centers) in germanium. We conclude that depending upon the Fermi energy,E centers that incorporate for phosphorous and arsenic can form in their neutral, singly negatively or doubly negatively charged states whereas with antimony only the neutral or doubly negatively charged states are predicted. The activation energies of diffusion are compared with recent experimental work and support the idea that smaller donor atoms exhibit higher diffusionactivation energies.

  14. Co-doping with antimony to control phosphorous diffusion in germanium

    KAUST Repository

    Tahini, H. A.

    2013-02-15

    In germanium, phosphorous and antimony diffuse quickly and as such their transport must be controlled in order to design efficient n-typed doped regions. Here, density functional theory based calculations are used to predict the influence of double donor co-doping on the migration activation energies of vacancy-mediated diffusion processes. The migration energy barriers for phosphorous and antimony were found to be increased significantly when larger clusters involving two donor atoms and a vacancy were formed. These clusters are energetically stable and can lead to the formation of even larger clusters involving a number of donor atoms around a vacancy, thereby affecting the properties of devices.

  15. Spectral studies on germanium pin-photovoltaic cells for thermophotovoltaic conversion. Technical report

    Energy Technology Data Exchange (ETDEWEB)

    Kittl, E.; Guazzoni, G.

    1975-05-01

    The results of an experimental investigation on a newly-developed germanium PIN-photovoltaic cell are reported, covering measured data on the spectral response of this cell. Also reported are experimental data on the optical surface reflectance and an analysis of its influence on the true spectral response of the cell. Measurements of the cell's output performance are reported for three different sources of chromatic radiation. These results are then compared to theoretical expectations derived from a computer analysis. (GRA)

  16. Ab initio modeling of defects in silicon, germanium and SiGe alloys

    OpenAIRE

    Torres, V. J. B.; Coutinho, J.; Carvalho, A; Barroso, M.; Almeida, Luís; Pinto, H.; Ribeiro, R. M.

    2005-01-01

    Understanding the most elemental defects in semiconductors is a fundamental step to grasp the countless solid-state reactions that may occur during crystal growth, device processing and operation stages. The higher carrier mobilitity in SiGe alloys and germanium, when compared with silicon, and the necessity to a higher K dielectric than SiO2 makes these semiconductors the most contendors to a new generation of electronic devices. Our aim is to model self and impurity point defects in SiGe a...

  17. Search of axions from a nuclear power reactor with a high-purity germanium detector

    International Nuclear Information System (INIS)

    This article reports the first study of possible emissions of axions from power reactors using Primakoff and Compton conversions as the detection mechanisms. The expected experimental signatures are mono-energetic lines produced by their Primakoff or Compton conversions at a high-purity germanium (HPGe) detector. No evidence of axion emissions were observed and constraints on axion couplings versus axion mass within the framework of invisible axion models were placed. This experimental approach provides a unique probe for axion mass at the keV-MeV range not accessible to the other techniques

  18. Experimental Search for Solar Axions via Coherent Primakoff Conversion in a Germanium Spectrometer

    OpenAIRE

    Avignone, F. T.; Abriola, D.; Brodzinski, R. L.; J. I. Collar; Creswick, R.J.; DiGregorio, D. E.; Farach, H. A.; Gattone, A. O.; Guerard, C. K.; Hasenbalg, F.; Huck, H.; Miley, H. S.; Morales, A.; MORALES, J., CRUZ, D., DELGADO, P., LIZANA, M., LÓPEZ, V.; Nussinov, S.

    1997-01-01

    Results are reported of an experimental search for the unique, rapidly varying temporal pattern of solar axions coherently converting into photons via the Primakoff effect in a single crystal germanium detector. This conversion is predicted when axions are incident at a Bragg angle with a crystalline plane. The analysis of approximately 1.94 kg.yr of data from the 1 kg DEMOS detector in Sierra Grande, Argentina, yields a new laboratory bound on axion-photon coupling of $g_{a\\gamma \\gamma} < 2...

  19. Experimental Search for Solar Axions via Coherent Primakoff Conversion in a Germanium Spectrometer

    International Nuclear Information System (INIS)

    Results are reported of an experimental search for the unique, rapidly varying temporal pattern of solar axions coherently converting into photons via the Primakoff effect in a single crystal germanium detector when axions are incident at a Bragg angle with a crystalline plane. The analysis of 1.94kgyr of data from the 1kg DEMOS detector in Sierra Grande, Argentina, yields a new laboratory bound by an axion-photon coupling of gaγγ-9 GeV-1 , independent of axion mass up to ∼1 keV . copyright 1998 The American Physical Society

  20. Electronic Structure of Single-Crystal Monolayer Graphene on Hydrogen-Terminated Germanium Surface

    Science.gov (United States)

    Ahn, Sung Joon; Lee, Jae-Hyun; Ahn, Joung Real; Whang, Dongmok

    2015-03-01

    Graphene, atomically flat 2-Dimensional layered nano material, has a lot of interesting characteristics from its unusual electronic structure. Almost properties of graphene are influenced by its crystallinity, therefore the uniform growth of single crystal graphene and layer control over the wafer scale areas remains a challenge in the fields of electronic, photonic and other devices based on graphene. Here, we report the method to make wafer scale single crystal monolayer graphene on hydrogen terminated germanium(110) surface and properties and electronic band structure of the graphene by using the tool of scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, electron transport measurement, electron diffraction and angle-resolved photoemission spectroscopy.

  1. Enhanced electromagnetic showers initiated by 20-180 GeV gamma rays on aligned thick germanium crystals

    Energy Technology Data Exchange (ETDEWEB)

    Baurichter, A.; Kirsebom, K.; Medenwaldt, R.; Mikkelsen, U.; Moeller, S.P.; Uggerhoej, E.; Worm, T.; Kononets, Y.V.; Elsener, K.; Ballestrero, S.; Sona, P.; Biino, C.; Connell, S.H.; Sellschop, J.P.F.; Vilakazi, Z.Z.; Apyan, A.; Avakian, R.O.; Ispirian, K.A.; Taroian, S.P

    1999-06-01

    The distribution of the energy released in a silicon detector placed on the downstream side of thick germanium single crystals bombarded by 20-180 GeV gamma rays along directions close to the <1 1 0> axis or along a random direction has been investigated. A large enhancement of the shower for axial incidence of the gamma rays has been found. The response of the system composed of a germanium crystal and a silicon detector to single gamma rays as a function of their energy has been deduced and compared with existing Monte Carlo simulations.

  2. Enhanced electromagnetic showers initiated by 20-180 GeV gamma rays on aligned thick germanium crystals

    Science.gov (United States)

    Baurichter, A.; Kirsebom, K.; Medenwaldt, R.; Mikkelsen, U.; Møller, S. P.; Uggerhøj, E.; Worm, T.; Kononets, Y. V.; Elsener, K.; Ballestrero, S.; Sona, P.; Biino, C.; Connell, S. H.; Sellschop, J. P. F.; Vilakazi, Z. Z.; Apyan, A.; Avakian, R. O.; Ispirian, K. A.; Taroian, S. P.

    1999-06-01

    The distribution of the energy released in a silicon detector placed on the downstream side of thick germanium single crystals bombarded by 20-180 GeV gamma rays along directions close to the axis or along a random direction has been investigated. A large enhancement of the shower for axial incidence of the gamma rays has been found. The response of the system composed of a germanium crystal and a silicon detector to single gamma rays as a function of their energy has been deduced and compared with existing Monte Carlo simulations.

  3. Mapping the electromagnetic field confinement in the gap of germanium nanoantennas with plasma wavelength of 4.5 micrometers

    Science.gov (United States)

    Calandrini, Eugenio; Venanzi, Tommaso; Appugliese, Felice; Badioli, Michela; Giliberti, Valeria; Baldassarre, Leonetta; Biagioni, Paolo; De Angelis, Francesco; Klesse, Wolfgang M.; Scappucci, Giordano; Ortolani, Michele

    2016-09-01

    We study plasmonic nanoantennas for molecular sensing in the mid-infrared made of heavily doped germanium, epitaxially grown with a bottom-up doping process and featuring free carrier density in excess of 1020 cm-3. The dielectric function of the 250 nm thick germanium film is determined, and bow-tie antennas are designed, fabricated, and embedded in a polymer. By using a near-field photoexpansion mapping technique at λ = 5.8 μm, we demonstrate the existence in the antenna gap of an electromagnetic energy density hotspot of diameter below 100 nm and confinement volume 105 times smaller than λ3.

  4. Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping

    Energy Technology Data Exchange (ETDEWEB)

    Hille, P., E-mail: Pascal.Hille@physik.uni-giessen.de; Müßener, J.; Becker, P.; Teubert, J.; Schörmann, J.; Eickhoff, M. [I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen (Germany); Mata, M. de la [Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, CAT (Spain); Rosemann, N.; Chatterjee, S. [Faculty of Physics and Materials Science Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg (Germany); Magén, C. [Laboratorio de Microscopías Avanzadas, Instituto de Nanociencia de Aragon-ARAID, Universidad de Zaragoza, 50018 Zaragoza (Spain); Arbiol, J. [Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, CAT (Spain); Institucio Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, CAT (Spain)

    2014-03-10

    We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of germanium at concentrations above 10{sup 20} cm{sup –3} shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration, a degradation of the photoluminescence properties is not observed.

  5. Determination of Trace Germanium in Marine Sediments by Hydride Generation-Atomic Fluorescence Spectrometry (HG-AFS)

    Institute of Scientific and Technical Information of China (English)

    LI Jing; ZHAO Shilan; ZHANG Zhaohui; ZENG Xianjie

    2004-01-01

    A method for the analysis of trace germanium in marine sediments by HG-AFS has been investigated. The experimental conditions such as the acidity of reduction reaction, the amount of sodium boro-hydride, the carrier gas flow rate, etc., were tested and optimized by using a kind of orthogonal design. The detection limit of the presented method is 0.95 μg L-1 for germanium. The calibration curve shows a satisfactory line in the concentration range 0-320 μg L-1 Ge with a variation coefficient of ±2.1%.

  6. The MPIR 100 mK bolometer array for 2 mm continuum observations

    Energy Technology Data Exchange (ETDEWEB)

    Reichertz, L.A. E-mail: reichertz@mpifr-bonn.mpg.de; Esch, W.; Gemuend, H.-P.; Gromke, J.; Kreysa, E

    2000-04-07

    We are developing bolometer arrays for continuum detection in millimeter and submillimeter astronomy [1]. For the 2 mm atmospheric window, where the transmission is comparatively high, a bolometer temperature of about 100 mK is necessary in order to avoid being limited by the system noise. Our new 2 mm array is cooled by a {sup 3}He/{sup 4}He-dilution refrigerator with a base temperature of 30 mK. The substrate for the 19 channel bolometer array consists of a single-crystal silicon wafer with silicon-nitride membranes. Radiation is collected by a single-mode horn array in front of the wafer and coupled into efficient absorbers in the center of the membranes. Resulting temperature changes of the absorbers are measured with NTD-germanium thermistors. In the first stage of the read out electronics, we use JFETs working at 150 K. Cold RF-filters prevent RF interference from entering the bolometer array cavity. The combination of several mesh filters and a short piece of cylindrical waveguide at the end of each horn defines the bandpass for the incoming radiation, which is matched to the 2 mm atmospheric window.

  7. The MPIR 100 mK bolometer array for 2 mm continuum observations

    International Nuclear Information System (INIS)

    We are developing bolometer arrays for continuum detection in millimeter and submillimeter astronomy [1]. For the 2 mm atmospheric window, where the transmission is comparatively high, a bolometer temperature of about 100 mK is necessary in order to avoid being limited by the system noise. Our new 2 mm array is cooled by a 3He/4He-dilution refrigerator with a base temperature of 30 mK. The substrate for the 19 channel bolometer array consists of a single-crystal silicon wafer with silicon-nitride membranes. Radiation is collected by a single-mode horn array in front of the wafer and coupled into efficient absorbers in the center of the membranes. Resulting temperature changes of the absorbers are measured with NTD-germanium thermistors. In the first stage of the read out electronics, we use JFETs working at 150 K. Cold RF-filters prevent RF interference from entering the bolometer array cavity. The combination of several mesh filters and a short piece of cylindrical waveguide at the end of each horn defines the bandpass for the incoming radiation, which is matched to the 2 mm atmospheric window

  8. Introduction to adaptive arrays

    CERN Document Server

    Monzingo, Bob; Haupt, Randy

    2011-01-01

    This second edition is an extensive modernization of the bestselling introduction to the subject of adaptive array sensor systems. With the number of applications of adaptive array sensor systems growing each year, this look at the principles and fundamental techniques that are critical to these systems is more important than ever before. Introduction to Adaptive Arrays, 2nd Edition is organized as a tutorial, taking the reader by the hand and leading them through the maze of jargon that often surrounds this highly technical subject. It is easy to read and easy to follow as fundamental concept

  9. P systems with array objects and array rewriting rules

    Institute of Scientific and Technical Information of China (English)

    K.G. Subramanian; R. Saravanan; M. Geethalakshmi; P. Helen Chandra; M. Margenstern

    2007-01-01

    Array P systems were introduced by Pǎun Gh. which is linking the two areas of membrane computing and picture grammars. Puzzle grammars were introduced by us for generating connected picture arrays in the two-dimensional plane, motivated by the problem of tiling the plane. On the other hand, incorporating into arrays the developmental type of generation used in the well-known biologically motivated L systems, Siromoney and Siromoney proposed a very general rectangular array generating model, called extended controlled tabled L array system (ECTLAS). In this paper we introduce two variations of the array P system, called BPG array P system and parallel array P system. The former has in the regions array objects and basic puzzle grammar rules (BPG), which are a specific kind of puzzle grammar rules. In the latter, the regions have rectangular array objects and tables of context-free rules. We examine these two types of P systems for their array generative power.

  10. Flexible retinal electrode array

    Energy Technology Data Exchange (ETDEWEB)

    Okandan, Murat (Albuquerque, NM); Wessendorf, Kurt O. (Albuquerque, NM); Christenson, Todd R. (Albuquerque, NM)

    2006-10-24

    An electrode array which has applications for neural stimulation and sensing. The electrode array can include a large number of electrodes each of which is flexibly attached to a common substrate using a plurality of springs to allow the electrodes to move independently. The electrode array can be formed from a combination of bulk and surface micromachining, with electrode tips that can include an electroplated metal (e.g. platinum, iridium, gold or titanium) or a metal oxide (e.g. iridium oxide) for biocompatibility. The electrode array can be used to form a part of a neural prosthesis, and is particularly well adapted for use in an implantable retinal prosthesis where the electrodes can be tailored to provide a uniform gentle contact pressure with optional sensing of this contact pressure at one or more of the electrodes.

  11. Expandable LED array interconnect

    Science.gov (United States)

    Yuan, Thomas Cheng-Hsin; Keller, Bernd

    2011-03-01

    A light emitting device that can function as an array element in an expandable array of such devices. The light emitting device comprises a substrate that has a top surface and a plurality of edges. Input and output terminals are mounted to the top surface of the substrate. Both terminals comprise a plurality of contact pads disposed proximate to the edges of the substrate, allowing for easy access to both terminals from multiple edges of the substrate. A lighting element is mounted to the top surface of the substrate. The lighting element is connected between the input and output terminals. The contact pads provide multiple access points to the terminals which allow for greater flexibility in design when the devices are used as array elements in an expandable array.

  12. Protein Functionalized Nanodiamond Arrays

    Directory of Open Access Journals (Sweden)

    Liu YL

    2010-01-01

    Full Text Available Abstract Various nanoscale elements are currently being explored for bio-applications, such as in bio-images, bio-detection, and bio-sensors. Among them, nanodiamonds possess remarkable features such as low bio-cytotoxicity, good optical property in fluorescent and Raman spectra, and good photostability for bio-applications. In this work, we devise techniques to position functionalized nanodiamonds on self-assembled monolayer (SAMs arrays adsorbed on silicon and ITO substrates surface using electron beam lithography techniques. The nanodiamond arrays were functionalized with lysozyme to target a certain biomolecule or protein specifically. The optical properties of the nanodiamond-protein complex arrays were characterized by a high throughput confocal microscope. The synthesized nanodiamond-lysozyme complex arrays were found to still retain their functionality in interacting with E. coli.

  13. Efficient one-pot synthesis of monodisperse alkyl-terminated colloidal germanium nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Carolan, Darragh, E-mail: darragh.carolan@tyndall.ie; Doyle, Hugh, E-mail: hugh.doyle@tyndall.ie [University College Cork, Tyndall National Institute (Ireland)

    2014-12-15

    An efficient one-pot method for fabricating alkyl-capped germanium nanocrystals (Ge NCs) is reported. Ge NCs with a size of 3.9 ± 0.5 nm, are formed by co-reduction of germanium tetrachloride in the presence of n-butyltrichlorogermane, producing NCs with butyl-terminated surfaces. The advantage of this method is that it allows rapid synthesis and functionalisation of NCs with minimal post-synthetic purification requirements. TEM imaging showed that the Ge NCs are monodisperse and highly crystalline, while EDX and SAED confirmed the chemical identity and crystal phase of the NCs. FTIR and XPS confirmed that the Ge NCs were well passivated, with some oxidation of the nanocrystal surface. Optical spectroscopy of the NCs showed a strong absorbance in the UV region and an excitation wavelength dependent photoluminescence in the UV/violet. Time resolved photoluminescence measurements showed the presence of two nanosecond lifetime components, consistent with recombination of photogenerated excitons at low lying energy states present at the nanocrystal surface. Photoluminescence quantum yields were determined to be 37 %, one of the highest values reported for organically terminated Ge NCs.

  14. GeMini: The Next-Generation Mechanically-Cooled Germanium Spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Burks, M

    2008-11-12

    The next-generation mechanically-cooled germanium spectrometer has been developed. GeMini (MINIature GErmanium spectrometer) has been designed to bring high-resolution gamma-ray spectroscopy to a range of demanding field environments. Intended applications include short-notice inspections, border patrol, port monitoring and emergency response, where positive nuclide identification of radioactive materials is required but power and liquid cryogen are not easily available. GeMini weighs 2.75 kg for the basic instrument and 4.5 kg for the full instrument including user interface and ruggedized hermetic packaging. It is very low power allowing it to operate for 10 hours on a single set of rechargeable batteries. This instrument employs technology adapted from the gamma-ray spectrometer currently flying on NASA's Mercury MESSENGER spacecraft. Specifically, infrared shielding techniques allow for a vast reduction of thermal load. This in turn allows for a smaller, lighter-weight design, well-suited for a hand-held instrument. Three working prototypes have been built and tested in the lab. The measured energy resolution is 3 keV fwhm at 662 keV gamma-rays. This paper will focus on the design and performance of the instrument.

  15. A model for the effects of germanium on silica biomineralization in choanoflagellates

    Science.gov (United States)

    Chappell, Helen; Ratcliffe, Sarah; Goldstein, Raymond E.

    2016-01-01

    Silica biomineralization is a widespread phenomenon of major biotechnological interest. Modifying biosilica with substances like germanium (Ge) can confer useful new properties, although exposure to high levels of Ge disrupts normal biosilicification. No clear mechanism explains why this disruption occurs. Here, we study the effect of Ge on loricate choanoflagellates, a group of protists that construct a species-specific extracellular lorica from multiple siliceous costal strips. High Ge exposures were toxic, whereas lower Ge exposures produced cells with incomplete or absent loricae. These effects can be ameliorated by restoring the germanium : silicon ratio, as observed in other biosilicifying organisms. We developed simulations of how Ge interacts with polymerizing silica. In our models, Ge is readily incorporated at the ends of silica forming from silicic acid condensation, but this prevents further silica polymerization. Our ‘Ge-capping’ model is supported by observations from loricate choanoflagellates. Ge exposure terminates costal strip synthesis and lorica formation, resulting in disruption to cytokinesis and fatal build-up of silicic acid. Applying the Ge-capping model to other siliceous organisms explains the general toxicity of Ge and identifies potential protective responses in metalloid uptake and sensing. This can improve the design of new silica biomaterials, and further our understanding of silicon metabolism. PMID:27655668

  16. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    Science.gov (United States)

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-09-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths.

  17. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    Science.gov (United States)

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-01-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths. PMID:27667259

  18. Exploration Of Activity Measurements And Equilibrium Checks For Sediment Dating Using Thick-Window Germanium Detectors

    Science.gov (United States)

    Warner, Jacob A.; Fitzsimmons, Kathryn E.; Reynolds, Eva M.; Gladkis, Laura G.; Timmers, Heiko

    2011-06-01

    Activity measurements on sediment samples for trapped-charge geological dating using gamma-ray spectroscopy are an important verification of the field-site dose rate determination. Furthermore gamma-ray spectroscopy can check if the natural decay series are in secular equilibrium which is a crucial assumption in such dating. Typically the activities of leading members of the Thorium and Uranium decay series are measured, which requires Germanium detectors with thin windows and good energy resolution in order to effectively detect the associated low energy gamma-rays. Such equipment is not always readily available. The potential of conventional Germanium detectors with thick entrance window has been explored towards routine gamma-ray spectroscopy of sediment samples using higher energy gamma-rays. Alternative isotopes, such as Ac-228 and Pb-212 for the Thorium series, and Pa-234m, Ra-226 and Bi-214 for the Uranium series, have been measured in order to determine the mass-specific activity for the respective series and possibly provide a check of secular equilibrium. In addition to measurements of the K-40 activity, with the alternative approach, the activities of both decay series can be accurately determined. The secular equilibrium condition may be tested for the Thorium series. Measurement accuracy for Pa-234m is, however, not sufficient to permit also a reliable check of equilibrium for the Uranium series.

  19. On the understanding of irradiation effects in germanium, silicon and gallium arsenide semi-conductors

    International Nuclear Information System (INIS)

    We have studied the behaviour of germanium, silicon and gallium arsenide semiconductors irradiated by different projectiles (heavy ions, protons, electrons and fullerenes). At low doses, thanks to deep level transient spectroscopy (DLTS) and Hall effect electrical measurements, we were able to explicit the nature of the defects present in germanium after irradiation at room temperature. For different projectiles, we have determined the defect creation kinetics. At higher doses, the electrical measurements have brought to the fore the presence of a specific defect created only after an heavy ion (or proton) irradiation. Moreover, positron annihilation spectroscopy (PAS) measurements show that size of this specific defect increases with the fluence. The damage has also been quantified by channeling Rutherford backscaterring (RBS-C) measurements. At first sight, the obtained defect creation rates are normalized by the nuclear collisions. This normalization is also present in the inverse of the gain evolution in silicon bipolar transistors. Meanwhile, an extensive study shows an efficiency decrease of the defect creation at intermediate values of the electronic energy loss Se, then, at the opposite, an increasing at higher values of Se. In the three semiconductors, we have observed track formation after fullerenes irradiation. These tracks are amorphous cylinders which have been characterized by transmission and high resolution electronic microscopy. They are due to the very high values of the electronic energy density which can be deposited by fullerenes owing to their low velocity. (author)

  20. Radial position of single-site gamma-ray interactions from a parametric pulse shape analysis of germanium detector signals

    CERN Document Server

    Orrell, J L; Cooper, M W; Kephart, J D; Seifert, C E; Orrell, John L.; Aalseth, Craig E.; Cooper, Matthew W.; Kephart, Jeremy D.; Seifert, Carolyn E.

    2007-01-01

    Pulse shape analysis of germanium gamma-ray spectrometer signals can yield information on the radial position of individual gamma-ray interactions within the germanium crystal. A parametric pulse shape analysis based on calculation of moments of the reconstructed current pulses from a closed-ended coaxial germanium detector is used to preferentially select single-site gamma-ray interactions. The double escape peak events from the 2614.5 keV gamma-ray of 208-Tl are used as a training set to optimize the single-site event selection region in the pulse shape parameter space. A collimated source of 320.1 keV gamma-rays from 51-Cr is used to scan different radial positions of the same semi-coaxial germanium detector. The previously trained single-site selection region is used to preferentially identify the single-site photoelectric absorption events from the 320.1 keV full-energy peak. From the identified events, a comparison of the pulse shape parameter space distributions between different scan positions allows ...

  1. Equation of state, nonlinear elastic response, and anharmonic properties of diamond-cubic silicon and germanium. First-principles investigation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chenju [Sichuan Univ., Chengdu (China). Inst. of Atomic and Molecular Physics; Institute of Fluid Physics, Sichuan (China). National Key Laboratory of Shock Wave and Detonation Physics; Gu, Jianbing [Institute of Fluid Physics, Sichuan (China). National Key Laboratory of Shock Wave and Detonation Physics; Sichuan Univ., Chengdu (China). College of Physical Science and Technology; Kuang, Xiaoyu [Sichuan Univ., Chengdu (China). Inst. of Atomic and Molecular Physics; Xiang, Shikai [Institute of Fluid Physics, Sichuan (China). National Key Laboratory of Shock Wave and Detonation Physics

    2015-10-01

    Nonlinear elastic properties of diamond-cubic silicon and germanium have not been investigated sufficiently to date. Knowledge of these properties not only can help us to understand nonlinear mechanical effects but also can assist us to have an insight into the related anharmonic properties, so we investigate the nonlinear elastic behaviour of single silicon and germanium by calculating their second- and third-order elastic constants. All the results of the elastic constants show good agreement with the available experimental data and other theoretical calculations. Such a phenomenon indicates that the present values of the elastic constants are accurate and can be used to further study the related anharmonic properties. Subsequently, the anharmonic properties such as the pressure derivatives of the second-order elastic constants, Grueneisen constants of long-wavelength acoustic modes, and ultrasonic nonlinear parameters are explored. All the anharmonic properties of silicon calculated in the present work also show good agreement with the existing experimental results; this consistency not only reveals that the calculation method of the anharmonic properties is feasible but also illuminates that the anharmonic properties obtained in the present work are reliable. For the anharmonic properties of germanium, since there are no experimental result and other theoretical data till now, we hope that the anharmonic properties of germanium first offered in this work would serve as a reference for future studies.

  2. Antireflection coating formed by plasma-enhanced chemical-vapor deposition for terahertz-frequency germanium optics

    Science.gov (United States)

    Hosako, Iwao

    2003-07-01

    A method of manufacturing optical coatings for germanium optics used at terahertz frequencies has been developed. The various optical coatings used at terahertz frequencies are difficult to manufacture conventionally because these coatings must be as thick as several tens of micrometers, which is far thicker than those used in the optical region. One way to overcome this problem is to form a silicon oxide layer through plasma-enhanced chemical-vapor deposition, with silane (SiH4) as a source gas. Using this method, I formed 21-μm-thick silicon oxide films as antireflection (AR) layers for germanium optics and obtained low reflection at 1.7 THz (wavelength, λ = 175 μm). This method is easily applied to large-aperture optics and micro-optics as well as to optics with a complex surface form. The AR coatings can also be formed for photoconductive detectors made from germanium doped with gallium at a low temperature (160 °C) this low temperature ensures that the doped impurities in the germanium do not diffuse. Fabrication of optical coatings upon substrates that have refractive indices of 3.84-11.7 may also be possible by control of the refractive indices of the deposited layers.

  3. Nonlinear strain dependences in highly strained germanium micromembranes for on-chip light source applications (Conference Presentation)

    Science.gov (United States)

    Guilloy, Kevin; Gassenq, Alban; Pauc, Nicolas; Escalante Fernandez, Jose Maria; Duchemin, Ivan; Niquet, Yann-Michel; Tardif, Samuel; Rieutord, Francois; Gentile, Pascal; Osvaldo Dias, Guilherme; Rouchon, Denis; Widiez, Julie; Hartmann, Jean-Michel; Fowler, Daivid; Chelnokov, Alexei; Geiger, Richard; Zabel, Thomas; Sigg, Hans C.; Faist, Jérôme; Reboud, Vincent; Calvo, Vincent

    2016-05-01

    Germanium is a strong candidate as a laser source for silicon photonics. Despite the indirect nature of its bandgap, the application of several percent of tensile strain reduces the energy difference between its direct and indirect bandgaps [1]. It has been predicted that above a certain strain threshold, germanium transforms into an actual direct bandgap material [2]. However, the properties of this material at unprecedented levels of strain still raise issues. A recently introduced strain technology based on prestressed germanium layers [3] enables to fabricate micro-membranes at such high strain. We present here both a theoretical and experimental study of the band edge and Raman shift at such high strain level. For above reasons, we start from slightly tensile-strained germanium-on-insulator (GeOI) substrates obtained by the Smart CutTM technology [4]. By etching adequate pattern in the germanium layer, both uniaxial and biaxial stress conditions were obtained after etching away the sacrificial buried oxide underneath the germanium layer. We performed x-ray diffraction measurements at the ESRF synchrotron using Laue in combinations with rainbow filtering techniques on the micro-membranes revealing strain values of 4.9 % for the uniaxial strain and 1.9 % for the biaxial strain [5-6]. We then studied the relationship between strain and Raman shift. While the relationship remained linear for biaxial stress condition, a significant deviation from the linear behavior behavior was observed above 2.5 % uniaxial strain. Such nonlinearity becomes dominant at very high strain levels; indeed a 9.9 cm-1 Raman shift corresponds to 4.9 % strain instead of the 6.5 % predicted by the linear extrapolation [5]. We performed simulations of the band structure of germanium under various stress conditions using a tight-binding model. For uniaxial stress, the relation between the energy positions of the band edges differed significantly from the deformation potential models in [1

  4. Optimizing Chemical Sensor Array Sizes

    International Nuclear Information System (INIS)

    Optimal selection of array sensors for a chemical sensing application is a nontrivial task. It is commonly believed that ''more is better'' when choosing the number of sensors required to achieve good chemical selectivity. However, cost and system complexity issues point towards the choice of small arrays. A quantitative array optimization is carried out to explore the selectivity of arrays of partially-selective chemical sensors as a function of array size. It is shown that modest numbers (dozens) of target analytes are completely distinguished with a range of arrays sizes. However, the array selectivity and the robustness against sensor sensitivity variability are significantly degraded if the array size is increased above a certain number of sensors, so that relatively small arrays provide the best performance. The results also suggest that data analyses for very large arrays of partially-selective sensors will be optimized by separately anal yzing small sensor subsets

  5. Imaging antenna arrays

    Science.gov (United States)

    Rutledge, D. B.; Muha, M. S.

    1982-01-01

    Many millimeter and far-infrared imaging systems are limited in sensitivity and speed because they depend on a single scanned element. Because of recent advances in planar detectors such as Schottky diodes, superconducting tunnel junctions, and microbolometers, an attractive approach to this problem is a planar antenna array with integrated detectors. A planar line antenna array and optical system for imaging has been developed. The significant advances are a 'reverse-microscope' optical configuration and a modified bow-tie antenna design. In the 'reverse-microscope' configuration, a lens is attached to the bottom of the substrate containing the antennas. Imaging is done through the substrate. This configuration eliminates the troublesome effects of substrate surface waves. The substrate lens has only a single refracting surface, making possible a virtually aplanatic system, with little spherical aberration or coma. The array is characterized by an optical transfer function that is easily measured. An array with 19 dB crosstalk levels between adjacent antennas has been tested and it was found that the array captured 50 percent of the available power. This imaging system was diffraction limited.

  6. Comparison of ultrasonic-assisted and regular leaching of germanium from by-product of zinc metallurgy.

    Science.gov (United States)

    Zhang, Libo; Guo, Wenqian; Peng, Jinhui; Li, Jing; Lin, Guo; Yu, Xia

    2016-07-01

    A major source of germanium recovery and also the source of this research is the by-product of lead and zinc metallurgical process. The primary purpose of the research is to investigate the effects of ultrasonic assisted and regular methods on the leaching yield of germanium from roasted slag containing germanium. In the study, the HCl-CaCl2 mixed solution is adopted as the reacting system and the Ca(ClO)2 used as the oxidant. Through six single factor (leaching time, temperature, amount of Ca(ClO)2, acid concentration, concentration of CaCl2 solution, ultrasonic power) experiments and the comparison of the two methods, it is found the optimum collective of germanium for ultrasonic-assisted method is obtained at temperature 80 °C for a leaching duration of 40 min. The optimum concentration for hydrochloric acid, CaCl2 and oxidizing agent are identified to be 3.5 mol/L, 150 g/L and 58.33 g/L, respectively. In addition, 700 W is the best ultrasonic power and an over-high power is adverse in the leaching process. Under the optimum condition, the recovery of germanium could reach up to 92.7%. While, the optimum leaching condition for regular leaching method is same to ultrasonic-assisted method, except regular method consume 100 min and the leaching rate of Ge 88.35% is lower about 4.35%. All in all, the experiment manifests that the leaching time can be reduced by as much as 60% and the leaching rate of Ge can be increased by 3-5% with the application of ultrasonic tool, which is mainly thanks to the mechanical action of ultrasonic.

  7. Comparison of ultrasonic-assisted and regular leaching of germanium from by-product of zinc metallurgy.

    Science.gov (United States)

    Zhang, Libo; Guo, Wenqian; Peng, Jinhui; Li, Jing; Lin, Guo; Yu, Xia

    2016-07-01

    A major source of germanium recovery and also the source of this research is the by-product of lead and zinc metallurgical process. The primary purpose of the research is to investigate the effects of ultrasonic assisted and regular methods on the leaching yield of germanium from roasted slag containing germanium. In the study, the HCl-CaCl2 mixed solution is adopted as the reacting system and the Ca(ClO)2 used as the oxidant. Through six single factor (leaching time, temperature, amount of Ca(ClO)2, acid concentration, concentration of CaCl2 solution, ultrasonic power) experiments and the comparison of the two methods, it is found the optimum collective of germanium for ultrasonic-assisted method is obtained at temperature 80 °C for a leaching duration of 40 min. The optimum concentration for hydrochloric acid, CaCl2 and oxidizing agent are identified to be 3.5 mol/L, 150 g/L and 58.33 g/L, respectively. In addition, 700 W is the best ultrasonic power and an over-high power is adverse in the leaching process. Under the optimum condition, the recovery of germanium could reach up to 92.7%. While, the optimum leaching condition for regular leaching method is same to ultrasonic-assisted method, except regular method consume 100 min and the leaching rate of Ge 88.35% is lower about 4.35%. All in all, the experiment manifests that the leaching time can be reduced by as much as 60% and the leaching rate of Ge can be increased by 3-5% with the application of ultrasonic tool, which is mainly thanks to the mechanical action of ultrasonic. PMID:26964934

  8. FEL phased array configurations

    Science.gov (United States)

    Shellan, Jeffrey B.

    1986-01-01

    The advantages and disadvantages of various phased array and shared aperture concepts for FEL configurations are discussed. Consideration is given to the characteristics of intra- and inter-micropulse phasing; intra-macropulse phasing; an internal coupled resonator configuration; and an injection locked oscillator array. The use of a master oscillator power amplifier (MOPA) configuration with multiple or single master oscillators for FELs is examined. The venetian blind, rotating plate, single grating, and grating rhomb shared aperture concepts are analyzed. It is noted that the shared aperture approach using a grating rhomb and the MOPA concept with a single master oscillator and a coupled resonator are useful for FEL phased array configurations; and the MOPA concept is most applicable.

  9. Wireless Josephson Junction Arrays

    Science.gov (United States)

    Adams, Laura

    2015-03-01

    We report low temperature, microwave transmission measurements on a wireless two- dimensional network of Josephson junction arrays composed of superconductor-insulator -superconductor tunnel junctions. Unlike their biased counterparts, by removing all electrical contacts to the arrays and superfluous microwave components and interconnects in the transmission line, we observe new collective behavior in the transmission spectra. In particular we will show emergent behavior that systematically responds to changes in microwave power at fixed temperature. Likewise we will show the dynamic and collective response of the arrays while tuning the temperature at fixed microwave power. We discuss these spectra in terms of the Berezinskii-Kosterlitz-Thouless phase transition and Shapiro steps. We gratefully acknowledge the support Prof. Steven Anlage at the University of Maryland and Prof. Allen Goldman at the University of Minnesota. Physics and School of Engineering and Applied Sciences.

  10. The Submillimeter Array

    CERN Document Server

    Ho, P T P; Lo, K Y; Ho, Paul T.P.; Moran, James M.; Lo, Kwok Yung

    2004-01-01

    The Submillimeter Array (SMA), a collaborative project of the Smithsonian Astrophysical Observatory (SAO) and the Academia Sinica Institute of Astronomy and Astrophysics (ASIAA), has begun operation on Mauna Kea in Hawaii. A total of eight 6-m telescopes comprise the array, which will cover the frequency range of 180-900 GHz. All eight telescopes have been deployed and are operational. First scientific results utilizing the three receiver bands at 230, 345, and 690 GHz have been obtained and are presented in the accompanying papers.

  11. Photovoltaic array performance model.

    Energy Technology Data Exchange (ETDEWEB)

    Kratochvil, Jay A.; Boyson, William Earl; King, David L.

    2004-08-01

    This document summarizes the equations and applications associated with the photovoltaic array performance model developed at Sandia National Laboratories over the last twelve years. Electrical, thermal, and optical characteristics for photovoltaic modules are included in the model, and the model is designed to use hourly solar resource and meteorological data. The versatility and accuracy of the model has been validated for flat-plate modules (all technologies) and for concentrator modules, as well as for large arrays of modules. Applications include system design and sizing, 'translation' of field performance measurements to standard reporting conditions, system performance optimization, and real-time comparison of measured versus expected system performance.

  12. Soldered solar arrays

    Science.gov (United States)

    Allen, H. C.

    1982-06-01

    The ability of soldered interconnects to withstand a combination of long life and severe environmental conditions was investigated. Improvements in joint life from the use of solder mixes appropriate to low temperature conditons were studied. Solder samples were placed in a 150 C oven for 5 weeks (= 12 yr at 80 C, or 24 at 70 C according to Arrhenius's rule). Conventional and high solder melting point array samples underwent 1000 thermal cycles between -186 and 100 C. Results show that conventional and lead rich soldered arrays can survive 10 yr geostationary orbit missions.

  13. Wire Array Photovoltaics

    Science.gov (United States)

    Turner-Evans, Dan

    Over the past five years, the cost of solar panels has dropped drastically and, in concert, the number of installed modules has risen exponentially. However, solar electricity is still more than twice as expensive as electricity from a natural gas plant. Fortunately, wire array solar cells have emerged as a promising technology for further lowering the cost of solar. Si wire array solar cells are formed with a unique, low cost growth method and use 100 times less material than conventional Si cells. The wires can be embedded in a transparent, flexible polymer to create a free-standing array that can be rolled up for easy installation in a variety of form factors. Furthermore, by incorporating multijunctions into the wire morphology, higher efficiencies can be achieved while taking advantage of the unique defect relaxation pathways afforded by the 3D wire geometry. The work in this thesis shepherded Si wires from undoped arrays to flexible, functional large area devices and laid the groundwork for multijunction wire array cells. Fabrication techniques were developed to turn intrinsic Si wires into full p-n junctions and the wires were passivated with a-Si:H and a-SiNx:H. Single wire devices yielded open circuit voltages of 600 mV and efficiencies of 9%. The arrays were then embedded in a polymer and contacted with a transparent, flexible, Ni nanoparticle and Ag nanowire top contact. The contact connected >99% of the wires in parallel and yielded flexible, substrate free solar cells featuring hundreds of thousands of wires. Building on the success of the Si wire arrays, GaP was epitaxially grown on the material to create heterostructures for photoelectrochemistry. These cells were limited by low absorption in the GaP due to its indirect bandgap, and poor current collection due to a diffusion length of only 80 nm. However, GaAsP on SiGe offers a superior combination of materials, and wire architectures based on these semiconductors were investigated for multijunction

  14. Analysis of proton single-particle properties of zinc and germanium isotopes

    Science.gov (United States)

    Bespalova, O. V.; Ermakova, T. A.; Klimochkina, A. A.; Romanovsky, E. A.; Spasskaya, T. I.

    2014-12-01

    Experimental proton single-particle energies in the vicinity of the Fermi energy for stable zinc and germanium isotopes are analyzed on the basis the dispersive optical model. The values found for the parameters of the dispersive optical potential are corrected with the aim of matching the total number of protons that is calculated with the aid of the function of Bardeen-Cooper-Schrieffer theory for the occupation probability for single-particle orbits with the charge number Z of the nucleus. The parameters of the dispersive optical potential are extrapolated on the basis of physically motivated arguments to the region of unstable isotopes in which the number N ranges between 34 and 50, and single-particle spectra are predicted by means of calculations with these parameters.

  15. The impact of neutral impurity concentration on charge drift mobility in germanium

    CERN Document Server

    Mei, H; Wang, G -J; Yang, G

    2016-01-01

    We report a new result of the neutral impurity scattering of electrons and holes that has impact on the charge drift mobility in high purity germanium crystals at 77 Kelvin. The charge carrier concentration, mobility and resistivity are measured by Hall Effect system at 77 Kelvin. We investigated the contribution to the total charge drift mobility from ionized impurity scattering, lattice scattering, and neutral impurity scattering with the best theoretical models and experimental data. Several samples with measured Hall mobility from the grown crystals are used for this investigation. With the measured Hall mobility and ionized impurity concentration as well as the theoretical models, we calculated the neutral impurity concentration by the Matthiessen's rule. As a result, the distributions of the neutral impurity concentrations with respect to the radius of the crystals are obtained. Consequently, we demonstrate that neutral impurity scattering is a significant contribution to the charge drift mobility, whic...

  16. Enhanced shower formation in aligned thick germanium crystals and discrimination against charged hadrons

    Energy Technology Data Exchange (ETDEWEB)

    Baurichter, A. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Kirsebom, K. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Medewaldt, R. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Mikkelsen, U. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Moeller, S. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Uggerhoej, E. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Worm, T. [Aarhus Univ. (Denmark). Inst. for Synchrotron Radiat.; Elsener, K. [European Organization for Nuclear Research, Geneva (Switzerland); Ballestrero, S. [Dipartimento di Fisica, University of Florence and INFN Sezione di Firenze, Largo E. Fermi 2, 50125 Florence (Italy); Sona, P. [Dipartimento di Fisica, University of Florence and INFN Sezione di Firenze, Largo E. Fermi 2, 50125 Florence (Italy); Romano, J. [Dipartimento di Fisica, University La Sapienza-Rome and INFN Sezione di Roma, P.le A. Moro 5, 00185 Rome (Italy)

    1995-11-01

    The distribution of the energy released in a thin silicon detector placed on the downstream side of a thick germanium single crystal bombarded with a 150 GeV electron or pion beam along directions close to the left angle 110 right angle axis or along random directions has been investigated. In view of a possible application to very high energy gamma ray astronomy and particle physics, the intrinsic capability of such a device to reject, on the basis of energy discrimination, unwanted events due to charged hadrons together with the resulting loss of efficiency for the detection of showers initiated by high energy electrons, is determined as a function of the chosen energy threshold. (orig.).

  17. Positron annihilation studies of fluorine-vacancy complexes in phosphorus- and fluorine-implanted germanium

    Science.gov (United States)

    Edwardson, C. J.; Coleman, P. G.; El Mubarek, H. A. W.

    2014-03-01

    The formation of FnV2 complexes, with n = 5 ± 1, near the end-of-range damage region in germanium implanted with 30 keV phosphorus and 40 keV fluorine ions, after annealing to 400 °C, has been observed using variable-energy positron annihilation spectroscopy in conjunction with secondary ion mass spectrometry. Phosphorus ions were implanted at 6 × 1013 and 1015, F at 1015 cm-2. Complexes—at lower concentrations—have also been observed at shallower depths in samples implanted with P at 1015 cm-2. The complexes break up and their components diffuse away at 450 and 500 °C for the higher and lower P dose samples, respectively.

  18. Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

    Science.gov (United States)

    D'Costa, Vijay Richard; Yeo, Yee-Chia

    2015-02-01

    Spectroscopic ellipsometry with photon energy in the 0.045-0.65 eV range was used to investigate germanium samples implanted with 30 keV phosphorus ions and annealed at 700 °C. The infrared response of implanted layers is dominated by free carrier absorption which is modeled using a Drude oscillator. The carrier concentration profiles were modeled using an error function, and compared with those obtained by electrochemical capacitance-voltage profiling and secondary ion mass spectrometry. In the flat region of the carrier concentration profile, average carrier concentration and mobility of 1.40 × 1019 cm-3 and 336 cm2V-1s-1, respectively, were obtained. A phosphorus diffusivity of ˜1.2 × 10-13 cm2/s was obtained. The mobility versus carrier concentration relationships obtained for the implanted samples are close to the empirical relationship for bulk Ge.

  19. Performance Analysis of Silicon and Germanium Nanowire Transistor using Crystal Orientation and Oxide Thickness

    Directory of Open Access Journals (Sweden)

    P.Theres Mary

    2014-09-01

    Full Text Available Nanowire Transistors have attracted attention due to the probable high performance and excellent controllability of device current. In this paper, we investigate the performance analysis of nanowire transistors made of silicon and germanium materials. The nanowire transistor has a 3D distribution of electron density and electrostatic potential, therefore self-consistent 3D simulations are used. Nanowire (tool is 3D Poisson self-consistent simulator which can study the 3D transport in nanowire transistor considering phonon scattering based on the effective-mass approximation. The output characteristics of the nanowire transistors are studied in detail for both Si and Ge materials for different transport orientation (i.e., 100,110,111 and varying the oxide thickness.

  20. Measurement of 238U muonic x-rays with a germanium detector setup

    Energy Technology Data Exchange (ETDEWEB)

    Esch, Ernst I [Los Alamos National Laboratory; Jason, Andrew [Los Alamos National Laboratory; Miyadera, Haruo [Los Alamos National Laboratory; Hoteling, Nathan J [Los Alamos National Laboratory; Heffner, Robert H [Los Alamos National Laboratory; Adelmann, Andreas [PAUL SCHERRER INSTITUT; Stocki, Trevor [HEALTH CANADA; Mitchell, Lee [NAVAL RESEARCH LAB

    2009-01-01

    In the field of nuclear non-proliferation muon interactions with materials are of great interest. This paper describes an experiment conducted at the Paul Scherrer Institut (PSI) in Switzerland where a muon beam is stopped in a uranium target. The muons produce characteristic muonic x-rays. Muons will penetrate shielding easily and the produced characteristic x-rays can be used for positive isotope identification. Furthermore, the x-rays for uranium isotopes lie in the energy range of 6-7 MeV, which allows them to have an almost optimal mean free path in heavy shielding such as lead or steel. A measurement was conducted at PSI to prove the feasibility of detecting muonic x-rays from a large sample of depleted uranium (several kilograms) with a germanium detector. In this paper, the experimental setup and analysis of the measurement itself is presented.

  1. Pulse shape analysis with a broad-energy germanium detector for the gerda experiment

    International Nuclear Information System (INIS)

    To reduce background in experiments looking for rare events, such as the GERDA double beta decay experiment, it is necessary to employ active background-suppression techniques. One of such techniques is the pulse shape analysis of signals induced by the interaction of radiation with the detector. Analysis of the time-development of the impulses can distinguish between an interaction of an electron and an interaction of a multiple-scattered photon inside the detector. This information can be used to eliminate unwanted events from the recorded data. In this talk, results of a pulse-shape analysis of signals from a commercially available broad-energy germanium detector will be presented. The background rejection capability of such detector configuration and the potential for its use in ultralow-background experiments are discussed.

  2. Pulse Shape Analysis with a Broad-Energy Germanium Detector for the GERDA experiment

    CERN Document Server

    Budjá?, Du?an; Chkvorets, Oleg; Schönert, Stefan; Khanbekov, Nikita

    2008-01-01

    To reduce background in experiments looking for rare events, such as the GERDA double beta decay experiment, it is necessary to employ active background-suppression techniques. One of such techniques is the pulse shape analysis of signals induced by the interaction of radiation with the detector. Analysis of the time-development of the impulses can distinguish between an interaction of an electron and an interaction of a multiple-scattered photon inside the detector. This information can be used to eliminate background events from the recorded data. Results of pulse-shape analysis of signals from a commercially available broad-energy germanium detector are presented and the pulse-shape discrimination capability of such detector configuration for use in low-background experiments is discussed.

  3. Analysis of proton single-particle properties of zinc and germanium isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Bespalova, O. V., E-mail: besp@sinp.msu.ru; Ermakova, T. A.; Klimochkina, A. A.; Romanovsky, E. A.; Spasskaya, T. I. [Moscow State University, Skobeltsyn Institute of Nuclear Physics (Russian Federation)

    2014-12-15

    Experimental proton single-particle energies in the vicinity of the Fermi energy for stable zinc and germanium isotopes are analyzed on the basis the dispersive optical model. The values found for the parameters of the dispersive optical potential are corrected with the aim of matching the total number of protons that is calculated with the aid of the function of Bardeen-Cooper-Schrieffer theory for the occupation probability for single-particle orbits with the charge number Z of the nucleus. The parameters of the dispersive optical potential are extrapolated on the basis of physically motivated arguments to the region of unstable isotopes in which the number N ranges between 34 and 50, and single-particle spectra are predicted by means of calculations with these parameters.

  4. Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices

    Directory of Open Access Journals (Sweden)

    A. Bag

    2011-01-01

    Full Text Available Metal-oxide-semiconductor (MOS capacitors with tri-layer structure consisting of rf magnetron sputtered grown germanium (Ge nanocrystals (NCs and silicon dioxide (SiO2 layers sandwiched between thermally grown tunnel and sputtered grown cap oxide layers of SiO2 were fabricated on p-Si substrates. Plane view transmission electron micrographs revealed the formation of spherically shaped and uniformly distributed Ge NCs. The optical and electronic characteristics of tri-layer structures were studied through photoluminescence (PL spectroscopy and capacitance-voltage (C-V measurements, respectively. Frequency dependent electrical properties of the structures have been studied. The optical emission characteristics support the confinement of the carriers in Ge NCs embedded in oxide matrices. An anticlockwise hysteresis in C-V characteristics suggests electron injection and trapping in Ge NCs.

  5. Wetting Angle and Surface Tension of Germanium Melts on Different Substrate Materials

    Science.gov (United States)

    Kaiser, N.; Croell, A.; Szofran, F. R.; Benz, K. W.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    The sessile drop technique has been used to measure the wetting angle and the surface tension of molten germanium (Ge) on various substrate materials. Sapphire, fused silica, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AlN, Si3N4, and CVD diamond were used as substrate materials. In addition, the effects of different cleaning procedures and surface treatments on the wetting behavior were investigated. The highest wetting angles with values around 170 deg. were found for pBN substrates under active vacuum or with a slight overpressure of 5N Argon or forming gas (2% Hydrogen in 5N Argon). The measurement of the surface tension and its temperature dependence for Ge under a forming gas atmosphere resulted in gamma(T) = 591 - 0.077 (T-T(sub m).

  6. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon.

    Science.gov (United States)

    Nam, Ju Hyung; Afshinmanesh, Farzaneh; Nam, Donguk; Jung, Woo Shik; Kamins, Theodore I; Brongersma, Mark L; Saraswat, Krishna C

    2015-06-15

    A germanium-on-insulator (GOI) p-i-n photodetector, monolithically integrated on a silicon (Si) substrate, is demonstrated. GOI is formed by lateral-overgrowth (LAT-OVG) of Ge on silicon dioxide (SiO(2)) through windows etched in SiO(2) on Si. The photodetector shows excellent diode characteristics with high on/off ratio (6 × 10(4)), low dark current, and flat reverse current-voltage (I-V) characteristics. Enhanced light absorption up to 1550 nm is observed due to the residual biaxial tensile strain induced during the epitaxial growth of Ge caused by cooling after the deposition. This truly Si-compatible Ge photodetector using monolithic integration enables new opportunities for high-performance GOI based photonic devices on Si platform.

  7. Synthesis and characterization of nano/micro structured crystalline germanium dioxide with novel morphology

    Institute of Scientific and Technical Information of China (English)

    WANG XiaoYan; DUAN Lian; DONG GuiFang; WEI Peng; WANG Wei; WANG LiDuo; QIU Yong

    2009-01-01

    Nano/micro-structured germanium oxide (GeO2) was prepared using GeCl4 and KOH by a simple solution method in alkalic alcoholic solution.Different morphologies of GeO2 were obtained by changing the reaction conditions.The effects of the reaction time,the concentration of the reactants,the reaction temperature and the dispersant upon the morphology of the deposited GeO2 have been investigated.The products were detected by X-ray diffraction (XRD),atomic force microscope (AFM),scanning electron microscope (SEM) and transmission electron microscope (TEM).Novel cross-like structures were obtained by using n-butylamine as the dispersant.The formation of the cross-like structures has been discussed and a solution-liquid-solid (SLS) mechanism was proposed.

  8. Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics

    CERN Document Server

    Jain, J Raja; Balram, Krishna C; White, Justin S; Brongersma, Mark L; Miller, David A B; Howe, Roger T

    2011-01-01

    We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible optoelectronic device fabrication. Crystal quality is assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device manufacturing is demonstrated through fabrication and characterization of metal-semiconductor-metal photodetectors that exhibit good responsivity beyond 1.55 {\\mu}m. The substrate fabrication process is compatible with complementary metal-oxide-semiconductor manufacturing and represents a potential route to wafer-scale integration of silicon-compatible optoelectronics.

  9. Measurement of the cosmogenic activation of germanium detectors in EDELWEISS-III

    CERN Document Server

    Armengaud, E; Augier, C; Benoît, A; Bergé, L; Billard, J; Blümer, J; de Boissière, T; Broniatowski, A; Camus, P; Cazes, A; Chapellier, M; Charlieux, F; De Jésus, M; Dumoulin, L; Eitel, K; Foerster, N; Gascon, J; Giuliani, A; Gros, M; Hehn, L; Heuermann, G; Jin, Y; Juillard, A; Kéfélian, C; Kleifges, M; Kozlov, V; Kraus, H; Kudryavtsev, V A; Le-Sueur, H; Marnieros, S; Navick, X -F; Nones, C; Olivieri, E; Pari, P; Paul, B; Piro, M -C; Poda, D; Queguiner, E; Rozov, S; Sanglard, V; Schmidt, B; Scorza, S; Siebenborn, B; Tcherniakhovski, D; Vagneron, L; Weber, M; Yakushev, E

    2016-01-01

    We present a measurement of the cosmogenic activation in the germanium cryogenic detectors of the EDELWEISS III direct dark matter search experiment. The decay rates measured in detectors with different exposures to cosmic rays above ground are converted into production rates of different isotopes. The measured production rates in units of nuclei/kg/day are 82 $\\pm$ 21 for $^3$H, 2.8 $\\pm$ 0.6 for $^{49}$V, 4.6 $\\pm$ 0.7 for $^{55}$Fe, and 106 $\\pm$ 13 for $^{65}$Zn. These results are the most accurate for these isotopes. A lower limit on the production rate of $^{68}$Ge of 74 nuclei/kg/day is also presented. They are compared to model predictions present in literature and to estimates calculated with the ACTIVIA code.

  10. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

    Science.gov (United States)

    Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Khai Loke, Wan; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia

    2016-09-01

    We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W-1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K-1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

  11. Neutrino and dark matter experiments with sub-keV Germanium detectors

    International Nuclear Information System (INIS)

    Germanium ionization detectors with sensitivities as low as 100 eVee open new windows for the studies of neutrino and dark matter physics. Sensitivities and dynamic ranges on several important research programs in neutrino and dark matter physics can be significantly enhanced with low energy physics signal detection at sub-keV region. This motivates efforts to characterize detector behaviour and to devise optimal analysis methods in the sub-keV energy region where the physics signals is comparable to the electronic noise. Various experimental issues have to be addressed before the promises of this new detector technique can be fully exploited. The theme of TEXONO (Taiwan EXperiment On NeutrinO) is to develop detectors with modular mass of Ø (1 kg), physics threshold of Ø(100 eVee) and background level at threshold of Ø (1kg-1 keV-1 day-1)

  12. Radiation electromagnetic effect in germanium crystals under high-energy. cap alpha. -particle irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kikoin, I.K.; Babichenko, V.S.; Kikoin, L.I.; Lazarev, S.D.; Rzhanov, A.E.; Filippov, V.I.

    1984-05-01

    Results of experimental investigation into radiation electromagnetic effect (REM) in samples of germanium crystals under approximately 40 MeV ..cap alpha..-particle irradiation in a cyclotron are presented. A high level of excitation, volumetric character of generation of non-equilibrium carriers and formation of defects as well as the form of their spatial distribution are shown to result in some peculiarities of the EMF of the REM effect on the particle flux, fluence and sample parameters. Agreement of theoretical calculations, conducted with account of specificity of ..cap alpha..-particle interaction with a crystal, and experimental data is obtained. It is revealed that the REM effect can be applied in obtaining data on spatial distribution of non-equilibrium carrier concentrations along the particle trajectory in the crystal.

  13. Radiation-electromagnetic effect in germanium crystals irradiated with high-energy. cap alpha. particles

    Energy Technology Data Exchange (ETDEWEB)

    Kikoin, I.K.; Babichenko, V.S.; Kikoin, L.I.; Lazarev, S.D.; Rzhanov, A.E.; Filippov, V.I.

    1984-05-01

    An experimental investigation was made of the radiation-electromagnetic effect in germanium crystals irradiated in a cyclotron with ..cap alpha.. particles of energies up to 40 MeV. The high excitation rate, the bulk nature of generation of nonequilibrium carriers and defects, and their spatial distributions gave rise to several special features in the dependence of the emf due to the radiation-electromagnetic effect on the particle flux, fluence, and parameters of samples. Theoretical calculations carried out allowing for the specific nature of the interaction of ..cap alpha.. particles with crystals agreed well with the experimental results. The radiation-electromagnetic effect could be used to obtain information on the nature of the spatial distribution of the density of nonequilibrium carriers along the trajectory of a particle in a crystal.

  14. Strained silicon/silicon germanium heterojunction n-channel metal oxide semiconductor field effect transistors

    CERN Document Server

    Olsen, S H

    2002-01-01

    Investigations into the performance of strained silicon/silicon-germanium (Si/SiGe) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) have been carried out. Theoretical predictions suggest that use of a strained Si/SiGe material system with advanced material properties compared with conventional silicon allows enhanced MOSFET device performance. This study has therefore investigated the practical feasibility of obtaining superior electrical performance using a Si/SiGe material system. The MOSFET devices consisted of a strained Si surface channel and were fabricated on relaxed SiGe material using a reduced thermal budget process in order to preserve the strain. Two batches of strained Si/SiGe devices fabricated on material grown by differing methods have been analysed and both showed good transistor action. A correlation of electrical and physical device data established that the electrical device behaviour was closely related to the SiGe material quality, which differed depending on growt...

  15. An ab initio study of multiple phonon scattering resonances in silicon germanium alloys

    Science.gov (United States)

    Mendoza, Jonathan; Esfarjani, Keivan; Chen, Gang

    2015-05-01

    We have computed phonon scattering rates and density of states in silicon germanium alloys using Green's function calculations and density functional theory. This method contrasts with the virtual crystal approximation (VCA) used in conjunction with Fermi's golden rule, which cannot capture resonance states occurring through the interaction of substitutional impurities with the host lattice. These resonances are demonstrated by density of states and scattering rate calculations in the dilute limit and show broadening as the concentration increases. Although these deviations become significant from the VCA at high frequencies, the relaxation times obtained for these phonon modes are small in both the full scattering theory and the VCA, resulting in their negligible contribution to thermal transport.

  16. Determination of the Peltier Coefficient of Germanium in a Vertical Bridgeman-Stockbarger Furnace

    Science.gov (United States)

    Weigel, Michaela E. K.; Matthiesen, David H.

    1997-01-01

    The Peltier effect is the fundamental mechanism that makes interface demarcation through current pulsing possible. If a method for calculating the necessary current density for effective demarcation is to be developed, it will be necessary to know the value of the Peltier coefficient. This study determined experimentally the value of the Peltier coefficient for gallium-doped germanium by comparing the change in average growth rates between current-on and current-off periods. Current-on and current-off layer thickness measurements were made using differential interference contrast microscopy and atomic force microscopy. It was found that the Joule and Thomson effects could not be neglected. Peltier coefficients calculated from the experimental data with an analysis that accounts for Joule, Thomson, and Peltier effects yielded an average value for the Peltier coefficient of 0.076 +/- 0.015 V.

  17. Mapping Brazilian radioactive minerals by gamma-ray spectrometry and using a germanium detector

    International Nuclear Information System (INIS)

    This paper has as scope the organization of a catalogue of the main uranium and/or thorium minerals using their gamma-ray spectra registered by their natural radioactivity with a pure germanium detector. The objective is to accumulate data for the radiometric identification for a posterior comparative study of minerals of same procedence or from new uranium and thorium occurrences. On the respective spectra are marked the main peaks, their energies and the correspondent radioisotopes. An estimative of their radioactive equilibrium state is included. As additional information the decay of the descendents of the natural series of 235U, 238U and 232Th, their gamma-ray energies and, finally, a table of the main uranium and thorium ores are presented. (Author)

  18. Quantitative assessment of molecular dynamics-grown amorphous silicon and germanium films on silicon (111)

    Science.gov (United States)

    Käshammer, Peter; Borgardt, Nikolai I.; Seibt, Michael; Sinno, Talid

    2016-09-01

    Molecular dynamics based on the empirical Tersoff potential was used to simulate the deposition of amorphous silicon and germanium on silicon(111) at various deposition rates and temperatures. The resulting films were analyzed quantitatively by comparing one-dimensional atomic density profiles to experimental measurements. It is found that the simulations are able to capture well the structural features of the deposited films, which exhibit a gradual loss of crystalline order over several monolayers. A simple mechanistic model is used to demonstrate that the simulation temperature may be used to effectively accelerate the surface relaxation processes during deposition, leading to films that are consistent with experimental samples grown at deposition rates many orders-of-magnitude slower than possible in a molecular dynamics simulation.

  19. Doping dependence of self-diffusion in germanium and the charge states of vacancies

    DEFF Research Database (Denmark)

    Südkamp, T.; Bracht, H.; Impellizzeri, G.;

    2013-01-01

    into account the dominance of doubly negatively charged vacancies under donor doping, the doping dependence of self-diffusion is best described with an inverse level ordering for singly and doubly negatively charged vacancies for all doping conditions. The level ordering explains the dominance of doubly......Self-diffusion in boron-doped germanium has been studied at temperatures between 526 and 749 °C with secondary ion mass spectrometry. Self-diffusion under acceptor doping is retarded compared to intrinsic conditions. This demonstrates the contribution of charged vacancies in self-diffusion. Taking...... charged vacancies under donor doping and their decreasing contribution with increasing acceptor doping until neutral vacancies mediate self-diffusion...

  20. Study of the inactive layer of a germanium detector: experimental and Monte Carlo simulation treatments

    Energy Technology Data Exchange (ETDEWEB)

    Zevallos-Chavez, Juan Y.; Pires, Carlos Augusto; Zahn, Guilherme Soares [Instituto de Pesquisas Energeticas e Nucleares (IPEN), Sao Paulo, SP (Brazil)]. E-mail: juan@if.usp.br; Genezini, Frederico Antonio [Centro Regional de Ciencias Nucleares (CRCN), Recife, PE (Brazil)). E-mail: Cruz, Manoel Tiago F. da (Sao Paulo Univ., SP (Brazil). Inst. de Fisica

    2005-07-01

    The detection efficiency of a Germanium detector was measured in the energy range of 80 keV up to 1 MeV. A model function to fit the efficiency data was used, containing an absorbing window factor. The results were compared with a Monte Carlo simulation of the photon interactions where, the nominal dimensions were varied in order to check the low-energy behavior of the efficiency curve. The Monte Carlo results showed to be in good agreement with the experimental ones when the nominal dimensions of the crystal, except for its dead layer thickness, were used. This difference in the dead layer was attributed to its non-uniformity. (author)

  1. THE PATHOGENESIS OF EXPERIMENTAL MODEL OF MITOCHONDRIAL MYOPATHY INDUCED BY GERMANIUM DIOXIDE

    Institute of Scientific and Technical Information of China (English)

    李晓东; 高枫; 陈清棠

    2001-01-01

    Objective. The purpose of the study was to build up an animal model of mitochondrial myopathy in order to analyse the pathogenesis of the disease. Methods. The skeletal muscles from Wistar rats treated with germanium dioxide for 24 weeks were analysed by histopathologic and electron-microscopic studies. A quantitative analysis was carried out in mitochondrial DNAs of these samples. The biological function of the model was determined. Results. An animal model of mitochondrial myopathy was built up, in which oxygen free radicals were increased and mitochondrial DNA copies were decreased contrasted with controls. Conclusion. It suggested that environmental toxin may play a role in the pathogenesis of mitochondrial myopathy. The increase of oxygen free radicals is an important link causing the disease.

  2. THE PATHOGENESIS OF EXPERIMENTAL MODEL OF MITOCHONDRIAL MYOPATHY INDUCED BY GERMANIUM DIOXIDE

    Institute of Scientific and Technical Information of China (English)

    李晓东; 高枫; 陈清棠

    2001-01-01

    Objective. The purpose of the study was to build up an animal model of mitochondrial myopathy in order to analyse the pathogenesis of the disease.Methods. The skeletal muscles from Wistar rats treated with germanium dioxide for 24 weeks were analysed by histopathologic and electron-microscopic studies. A quantitative analysis was carried out in mitochondrial DNAs of these samples. The biological function of the model was determined.``Results. An animal model of mitochondrial myopathy was built up, in which oxygen free radicals were increased and mitochondrial DNA copies were decreased contrasted with controls.``Conclusion. It suggested that environmental toxin may play a role in the pathogenesis of mitochondrial myopathy. The increase of oxygen free radicals is an important link causing the disease.

  3. A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity

    Science.gov (United States)

    Shumei, Lai; Danfeng, Mao; Zhiwei, Huang; Yihong, Xu; Songyan, Chen; Cheng, Li; Wei, Huang; Dingliang, Tang

    2016-09-01

    Plasma treatment and 10% NH4OH solution rinsing were performed on a germanium (Ge) surface. It was found that the Ge surface hydrophilicity after O2 and Ar plasma exposure was stronger than that of samples subjected to N2 plasma exposure. This is because the thin GeO x film formed on Ge by O2 or Ar plasma is more hydrophilic than GeO x N y formed by N2 plasma treatment. A flat (RMS direct wafer bonding. Project supported by the Key Project of Natural Science Foundation of China (No. 61534005), the National Science Foundation of China (No. 61474081), the National Basic Research Program of China (No. 2013CB632103), the Natural Science Foundation of Fujian Province (No. 2015D020), and the Science and Technology Project of Xiamen City (No. 3502Z20154091).

  4. Measurement of the dead layer thickness in a p-type point contact germanium detector

    Science.gov (United States)

    Jiang, Hao; Yue, Qian; Li, Yu-Lan; Kang, Ke-Jun; Li, Yuan-Jing; Li, Jin; Lin, Shin-Ted; Liu, Shu-Kui; Ma, Hao; Ma, Jing-Lu; Su, Jian; Tsz-King Wong, Henry; Yang, Li-Tao; Zhao, Wei; Zeng, Zhi

    2016-09-01

    A 994 g mass p-type PCGe detector has been deployed during the first phase of the China Dark matter EXperiment, aiming at direct searches for light weakly interacting massive particles. Measuring the thickness of the dead layer of a p-type germanium detector is an issue of major importance since it determines the fiducial mass of the detector. This work reports a method using an uncollimated 133Ba source to determine the dead layer thickness. The experimental design, data analysis and Monte Carlo simulation processes, as well as the statistical and systematic uncertainties are described. A dead layer thickness of 1.02 mm was obtained based on a comparison between the experimental data and the simulated results. Supported by National Natural Science Foundation of China (10935005, 10945002, 11275107, 11175099)

  5. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength

    Science.gov (United States)

    Dong, Yuan; Wang, Wei; Lee, Shuh Ying; Lei, Dian; Gong, Xiao; Khai Loke, Wan; Yoon, Soon-Fatt; Liang, Gengchiau; Yeo, Yee-Chia

    2016-09-01

    We report the demonstration of a germanium-tin multiple quantum well (Ge0.9Sn0.1 MQW)-on-Si avalanche photodiode (APD) for light detection near the 2 μm wavelength range. The measured spectral response covers wavelengths from 1510 to 2003 nm. An optical responsivity of 0.33 A W‑1 is achieved at 2003 nm due to the internal avalanche gain. In addition, a thermal coefficient of breakdown voltage is extracted to be 0.053% K‑1 based on the temperature-dependent dark current measurement. As compared to the traditional 2 μm wavelength APDs, the Si-based APD is promising for its small excess noise factor, less stringent demand on temperature stability, and its compatibility with silicon technology.

  6. Structural, elastic and thermodynamic properties of the tetragonal structure of germanium carbonitride

    Science.gov (United States)

    Xing, Mengjiang; Li, Binhua; Yu, Zhengtao; Chen, Qi

    2016-04-01

    The structural, mechanical, electronic and thermodynamic properties of the tetragonal structure germanium carbonitride (t-GeCN) were first investigated using the density function theory with the ultrasoft psedopotential scheme in the frame of the generalized gradient approximation and the local density approximation. The elastic constants have confirmed that the t-GeCN is mechanically stable and phonon spectra have confirmed that the t-GeCN is dynamically stable. The anisotropy studies show that t-GeCN exhibits a larger anisotropy in its Poisson's ratio, Young's modulus, shear modulus, sound velocities and universal elastic anisotropy index. Electronic structure study shows that t-GeCN is an indirect semiconductor with band gap of 0.628 eV. The thermodynamic properties of t-GeCN, including Debye temperature, heat capacity, Grüneisen parameter and thermal expansion coefficient are investigated utilizing the quasi-harmonic Debye model.

  7. Analytical modeling and simulation of germanium single gate silicon on insulator TFET

    International Nuclear Information System (INIS)

    This paper proposes a new two dimensional (2D) analytical model for a germanium (Ge) single gate silicon-on-insulator tunnel field effect transistor (SG SOI TFET). The parabolic approximation technique is used to solve the 2D Poisson equation with suitable boundary conditions and analytical expressions are derived for the surface potential, the electric field along the channel and the vertical electric field. The device output tunnelling current is derived further by using the electric fields. The results show that Ge based TFETs have significant improvements in on-current characteristics. The effectiveness of the proposed model has been verified by comparing the analytical model results with the technology computer aided design (TCAD) simulation results and also comparing them with results from a silicon based TFET. (semiconductor devices)

  8. Observation of Impact Ionization of Shallow States in Sub-Kelvin, High-Purity Germanium

    Science.gov (United States)

    Phipps, A.; Sadoulet, B.; Sundqvist, K. M.

    2016-07-01

    We report on the observation of impact ionization processes involving shallow impurity states in a sub-Kelvin, high-purity n-type germanium detector similar to those used by direct detection dark matter experiments such as the Cryogenic Dark Matter Search. An optical fiber is used to generate packets of charge carriers near one surface of the detector. The charge carriers drift to the opposite surface by application of an electric field. The resulting drift current is measured by a high-speed charge amplifier. The onset of impact ionization for both electron and hole transport is clearly observed in the drift current as the applied electric field is increased above ≈ 5 V/cm. We present the effective charge collection efficiency and trapping length as a function of applied electric field for electrons and holes. We estimate the impact ionization cross section to be on the order of 5× 10^{-13} mathrm {cm}^2.

  9. Recent results from the canfranc dark matter search with germanium detectors

    OpenAIRE

    Irastorza, I. G.; Morales, A.; Aalseth, C. E.; Avignone III, F. T.; Brodzinski, R. L.; Cebrian, S.; Garcia, E.; Gonzalez, D; Hensley, W. K.; Miley, H. S.; MORALES, J., CRUZ, D., DELGADO, P., LIZANA, M., LÓPEZ, V.; de Solorzano, A. Ortiz; Puimedon, J.; Reeves, J. H.; Sarsa, M. L.(Laboratorio de Física Nuclear y Astropartículas, Universidad de Zaragoza, Calle Pedro Cerbuna 12, 50009, Zaragoza, Spain)

    2000-01-01

    Two germanium detectors are currently operating in the Canfranc Underground Laboratory at 2450 m.w.e looking for WIMP dark matter. One is a 2 kg 76Ge IGEX detector (RG-2) which has an energy threshold of 4 keV and a low-energy background rate of about 0.3 c/keV/kg/day. The other is a small (234 g) natural abundance Ge detector (COSME), of low energy threshold (2.5 keV) and an energy resolution of 0.4 keV at 10 keV which is looking for WIMPs and for solar axions. The analysis of 73 kg-days of ...

  10. Atomic-layer deposited thulium oxide as a passivation layer on germanium

    Energy Technology Data Exchange (ETDEWEB)

    Mitrovic, I. Z., E-mail: ivona@liverpool.ac.uk; Hall, S.; Weerakkody, A. D.; Sedghi, N. [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool L69 3GJ (United Kingdom); Althobaiti, M.; Hesp, D.; Dhanak, V. R. [Department of Physics and Stephenson Institute for Renewable Energy, University of Liverpool, Liverpool L69 7ZF (United Kingdom); Santoni, A. [ENEA, Frascati Research Centre, via E. Fermi 45, 00044 Frascati (Italy); Chalker, P. R. [Department of Engineering, University of Liverpool, Brownlow Hill, Liverpool L69 3GH (United Kingdom); Henkel, C.; Dentoni Litta, E.; Hellström, P.-E.; Östling, M. [School of ICT, KTH Royal Institute of Technology, Isafjordsgatan 22, 164 40 Kista (Sweden); Tan, H.; Schamm-Chardon, S. [CEMES-CNRS and Université de Toulouse, nMat group, BP 94347, 31055 Toulouse Cedex 4 (France)

    2015-06-07

    A comprehensive study of atomic-layer deposited thulium oxide (Tm{sub 2}O{sub 3}) on germanium has been conducted using x-ray photoelectron spectroscopy (XPS), vacuum ultra-violet variable angle spectroscopic ellipsometry, high-resolution transmission electron microscopy (HRTEM), and electron energy-loss spectroscopy. The valence band offset is found to be 3.05 ± 0.2 eV for Tm{sub 2}O{sub 3}/p-Ge from the Tm 4d centroid and Ge 3p{sub 3/2} charge-corrected XPS core-level spectra taken at different sputtering times of a single bulk thulium oxide sample. A negligible downward band bending of ∼0.12 eV is observed during progressive differential charging of Tm 4d peaks. The optical band gap is estimated from the absorption edge and found to be 5.77 eV with an apparent Urbach tail signifying band gap tailing at ∼5.3 eV. The latter has been correlated to HRTEM and electron diffraction results corroborating the polycrystalline nature of the Tm{sub 2}O{sub 3} films. The Tm{sub 2}O{sub 3}/Ge interface is found to be rather atomically abrupt with sub-nanometer thickness. In addition, the band line-up of reference GeO{sub 2}/n-Ge stacks obtained by thermal oxidation has been discussed and derived. The observed low reactivity of thulium oxide on germanium as well as the high effective barriers for holes (∼3 eV) and electrons (∼2 eV) identify Tm{sub 2}O{sub 3} as a strong contender for interfacial layer engineering in future generations of scaled high-κ gate stacks on Ge.

  11. Germanium-silicon alloy and core-shell nanocrystals by gas phase synthesis.

    Science.gov (United States)

    Mehringer, Christian; Kloner, Christian; Butz, Benjamin; Winter, Benjamin; Spiecker, Erdmann; Peukert, Wolfgang

    2015-03-12

    In this work we present a novel route to synthesize well defined germanium-silicon alloy (GexSi1-x) and core-shell nanocrystals (NCs) employing monosilane (SiH4) and monogermane (GeH4) as precursors in a continuously operated two-stage hot-wall aerosol reactor setup. The first hot-wall reactor stage (HWR I) is used to produce silicon (Si) seed particles from SiH4 pyrolysis in Argon (Ar). The resulting seeding aerosol is fed into the second reactor stage (HWR II) and a mixture of SiH4 and GeH4 is added. The ratio of the precursors in the feed, their partial pressures, the synthesis temperature in HWR II and the overall pressure are varied depending on the desired morphology and composition. Alloy particle production is achieved in the heterogeneous surface reaction regime, meaning that germanium (Ge) and Si are deposited on the seed surface simultaneously. The NCs can be synthesized with any desired composition, whilst maintaining a mean diameter around 30 nm with a geometric standard deviation (GSD) around 1.25. The absorption behavior and the related fundamental optical band gap energy in dependence on the alloy composition are exemplarily presented. They prove the possibility to tailor NC properties for electronical and opto-electronical applications. In the homogeneous gas phase reaction regime facetted Ge-Si core-shell structures are accessible. The Ge deposition on the seeds precedes the Si deposition due to different gas phase reaction kinetics of the precursors. The Si layer grows epitaxially on the Ge core and is around 5 nm thick.

  12. Roughening transition in nanoporous hydrogenated amorphous germanium: Roughness correlation to film stress

    Science.gov (United States)

    Carroll, M. S.; Verley, J. C.; Sheng, J. J.; Banks, J.

    2007-03-01

    Hydrogenated amorphous germanium (a-Ge:H) is a material of interest for optoelectronic applications such as solar cells and radiation detectors because of the material's potential to extend the wavelength sensitivity of hydrogenated amorphous silicon (a-Si:H). An increase in porosity is observed in amorphous germanium compared to a-Si :H, and this increase in porosity has been correlated with a degradation of the electrical performance. Improved understanding of the mechanisms of porous formation in a-Ge :H films is therefore desirable in order to better control it. In this paper we describe a correlation between film stress and surface roughness, which evolves with increasing thickness of a-Ge :H. A roughening transition from planar two-dimensional growth to three-dimensional growth at a critical thickness less than 800Å results in a network of needlelike nanotrench cavities which stretch from the transition thickness to the surface in films up to 4000Å thick. Surface roughness measurements by atomic force microscope and transmission electron microscopy indicate that the transition is abrupt and that the roughness increases linearly after the transition thickness. The roughening transition thickness is, furthermore, found to correlate with the maxima of the integrated compressive stress. The compressive stress is reduced after this transition thickness due to the incorporation of nanovoids into the film that introduce tensile stress as the islands coalesce together. The roughening transition behavior is similar to that found in a general class of Volmer-Weber mode thin film deposition (e.g., Cu, Ag, and nonhydrogenated amorphous silicon), which offers additional insight into the underlying mechanisms of the stress and roughening in these a-Ge :H films. The suppression of the roughening transition by changing the kinetics of the deposition rates (e.g., slowing the deposition rate with a weak sputtering bias) is also observed and discussed.

  13. Lung counting: comparison of detector performance with a four detector array that has either metal or carbon fibre end caps, and the effect on mda calculation.

    Science.gov (United States)

    Ahmed, Asm Sabbir; Hauck, Barry; Kramer, Gary H

    2012-08-01

    This study described the performance of an array of high-purity Germanium detectors, designed with two different end cap materials-steel and carbon fibre. The advantages and disadvantages of using this detector type in the estimation of the minimum detectable activity (MDA) for different energy peaks of isotope (152)Eu were illustrated. A Monte Carlo model was developed to study the detection efficiency for the detector array. A voxelised Lawrence Livermore torso phantom, equipped with lung, chest plates and overlay plates, was used to mimic a typical lung counting protocol with the array of detectors. The lung of the phantom simulated the volumetric source organ. A significantly low MDA was estimated for energy peaks at 40 keV and at a chest wall thickness of 6.64 cm.

  14. Array Theory and Nial

    DEFF Research Database (Denmark)

    Falster, Peter; Jenkins, Michael

    1999-01-01

    This report is the result of collaboration between the authors during the first 8 months of 1999 when M. Jenkins was visiting professor at DTU. The report documents the development of a tool for the investigation of array theory concepts and in particular presents various approaches to choose pri...

  15. The Murchison Widefield Array

    NARCIS (Netherlands)

    Mitchell, Daniel A.; Greenhill, Lincoln J.; Ord, Stephen M.; Bernardi, Gianni

    2010-01-01

    It is shown that the excellent Murchison Radio-astronomy Observatory site allows the Murchison Widefield Array to employ a simple RFI blanking scheme and still calibrate visibilities and form images in the FM radio band. The techniques described are running autonomously in our calibration and imagin

  16. Cantilever array sensors

    Directory of Open Access Journals (Sweden)

    Hans Peter Lang

    2005-04-01

    Full Text Available Miniaturized microfabricated sensors have enormous potential in gas detection, biochemical analysis, medical applications, quality and process control, and product authenticity issues. Here, we highlight an ultrasensitive mechanical way of converting (bio-chemical or physical processes into a recordable signal using microfabricated cantilever arrays.

  17. Bandwidth Reconfigurable Metamaterial Arrays

    Directory of Open Access Journals (Sweden)

    Nathanael J. Smith

    2014-01-01

    Full Text Available Metamaterial structures provide innovative ways to manipulate electromagnetic wave responses to realize new applications. This paper presents a conformal wideband metamaterial array that achieves as much as 10 : 1 continuous bandwidth. This was done by using interelement coupling to concurrently achieve significant wave slow-down and cancel the inductance stemming from the ground plane. The corresponding equivalent circuit of the resulting array is the same as that of classic metamaterial structures. In this paper, we present a wideband Marchand-type balun with validation measurements demonstrating the metamaterial (MTM array’s bandwidth from 280 MHz to 2800 MHz. Bandwidth reconfiguration of this class of array is then demonstrated achieving a variety of band-pass or band-rejection responses within its original bandwidth. In contrast with previous bandwidth and frequency response reconfigurations, our approach does not change the aperture’s or ground plane’s geometry, nor does it introduce external filtering structures. Instead, the new responses are realized by making simple circuit changes into the balanced feed integrated with the wideband MTM array. A variety of circuit changes can be employed using MEMS switches or variable lumped loads within the feed and 5 example band-pass and band-rejection responses are presented. These demonstrate the potential of the MTM array’s reconfiguration to address a variety of responses.

  18. The Allen Telescope Array

    Science.gov (United States)

    Bower, Geoffrey C.; Allen Telescope Array Team

    2010-01-01

    The ATA is a 42-element centimeter wavelength array located in Hat Creek, California and jointly operated by UC Berkeley Radio Astronomy Laboratory and the SETI Institute. Since the ATA dedication in Fall 2007, activities have been focused on commissioning the array, retrofitting a handful of components including the feed, developing an operations model, creation of pipeline processing for correlator imaging data, early science observations, and launching of the major surveys for which the telescope was built. The retrofit of the feed improves feed mechanical robustness as well as high frequency performance. Science programs launched include imaging radio transient and static sky surveys (ATATS and PiGSS), commensal SETI and transient surveys of the Galactic Center, targeted SETI observations of nearby stars, the Fly's Eye transient survey, broadband spectra of nearby star-forming galaxies, polarimetric observations of bright radio sources, observations of hydrogen in nearby galaxies and galaxy groups, molecular line observations in the Galaxy, and observations of Jupiter and the Moon. The baseline Square Kilometer Array (SKA) design, a large-N-small-diameter (LNSD) array with wide-band single-pixel feeds and an offset Gregorian antenna, bears a strong resemblance to the ATA. Additional ATA contributions to the SKA include configuration studies for LNSD arrays, the use of fiber optics for broadband data transmission, the use of flexible FPGA-based digital electronics, passive cooling of antennas, and implementation of commensal observing modes. The ATA is currently used for exploration of calibration and imaging algorithms necessary for the SKA. I will summarize current technical status and performance, the results from early science and surveys, and ATA contributions to SKA development.

  19. Development of amorphous silicon-germanium-alloys for stacked solar cells; Entwicklung von amorphen Silizium-Germanium-Legierungen fuer den Einsatz in Stapelsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Lundszien, D.

    2001-01-01

    To obtain high efficiency silicon based thin film solar cells, the concept of stacked solar cells is routinely used. The use of component cells with different optical bandgaps provides a better utilization of the solar spectrum. In a stacked cell structure, a high quality narrow bandgap material is needed for the active layer of the bottom cell. Amorphous silicon-germanium-alloys (a-SiGe:H) have been successfully employed because of their tunable optical bandgap E{sub G} between 1.8 eV (a-Si:H) and 1.1 eV (a-Ge:H). Considerable effort has been put into the development of a-SiGe:H. Still, with increasing Ge content, the material shows a characteristic deterioration of its electronic properties, like an exponential increase of the defect density, thus counteracting the gain in absorption obtained for higher Ge contents. It is the defect density which has the dominant influence on carrier transport and cell efficiency by affecting the mobility lifetime product and the electric field in the devices. The performance of a-SiGe:H pin solar cells with a wide range of Ge contents i.e. a wide range of optical band gaps (E{sub G}=1.3 to 1.6 eV) are compared. It is demonstrated how the deterioration of the material properties can be overcome by careful adjustment of the device design and the use of highly reflective ZnO/Ag back contacts. (orig.)

  20. Towards Truly Boolean Arrays in Data-Parallel Array Processing

    NARCIS (Netherlands)

    C. Grelck; H. Luyat

    2013-01-01

    We investigate several dense bit-wise implementations of Boolean arrays in the context of the functional data-parallel array programming language SAC. A particular problem arises in compiler or directive based parallelisation as the scheduling of loops over Boolean arrays is unaware of the restricte

  1. 非晶硅锗电池性能的调控研究%Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell

    Institute of Scientific and Technical Information of China (English)

    刘伯飞; 白立沙; 魏长春; 孙建; 侯国付; 赵颖; 张晓丹

    2013-01-01

    采用射频等离子体增强化学气相沉积技术,研究了非晶硅锗薄膜太阳电池。针对非晶硅锗薄膜材料的本身特性,通过调控硅锗合金中硅锗的比例,实现了对硅锗薄膜太阳电池中开路电压和短路电流密度的分别控制。借助于本征层硅锗材料帯隙梯度的设计,获得了可有效用于多结叠层电池中的非晶硅锗电池。%In this paper, we study hydrogenated amorphous silicon germanium thin film solar cells prepared by the radio frequency plasma-enhanced chemical vapor deposition. In the light of the inherent characteristics of hydrogenated amorphous silicon germanium mate-rial, the modulation of the germanium/silicon ratio in silicon germanium alloys can separately control open circuit voltage (Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cells. By the structural design of band gap profiling in the amorphous silicon germanium intrinsic layer, hydrogenated amorphous silicon germanium thin film solar cells, which can be used efficiently as the component cell of multi-junction solar cells, are obtained.

  2. Concurrent array-based queue

    Energy Technology Data Exchange (ETDEWEB)

    Heidelberger, Philip; Steinmacher-Burow, Burkhard

    2015-01-06

    According to one embodiment, a method for implementing an array-based queue in memory of a memory system that includes a controller includes configuring, in the memory, metadata of the array-based queue. The configuring comprises defining, in metadata, an array start location in the memory for the array-based queue, defining, in the metadata, an array size for the array-based queue, defining, in the metadata, a queue top for the array-based queue and defining, in the metadata, a queue bottom for the array-based queue. The method also includes the controller serving a request for an operation on the queue, the request providing the location in the memory of the metadata of the queue.

  3. Group IV semiconductor nanowire arrays: epitaxy in different contexts

    International Nuclear Information System (INIS)

    Epitaxy can be used to direct nanowire deposition and to influence the crystallographic orientation of nanowires during their nucleation and growth via the vapor–liquid–solid mechanism. We have investigated rapid thermal chemical vapor deposition of epitaxial Ge nanowires and have used it to separately study nanowire nucleation and growth. This work has provided important insights into deep-subeutectic Ge nanowire growth using Au catalyst particles. Germanium nanowires have also been studied as the cores in epitaxial Ge core/Si shell nanowires. We have studied the conditions under which strain-driven surface roughening and dislocations formation occur in these coaxial nanowire heterostructures. Our results indicate that suppression of Si shell surface roughening can lead to fully strained, coherent core/shell nanowires. Recently, we have used vertical arrays of Ge (1 1 1) nanowires grown at low temperatures on Si substrates to seed liquid-phase epitaxy of large-area amorphous Ge islands above the substrate surface. This work demonstrates a potential approach for dense vertical integration of Ge-based devices on Si substrates, for on-chip optoelectronics or 3D integrated circuit applications

  4. Radar techniques using array antennas

    CERN Document Server

    Wirth, Wulf-Dieter

    2013-01-01

    Radar Techniques Using Array Antennas is a thorough introduction to the possibilities of radar technology based on electronic steerable and active array antennas. Topics covered include array signal processing, array calibration, adaptive digital beamforming, adaptive monopulse, superresolution, pulse compression, sequential detection, target detection with long pulse series, space-time adaptive processing (STAP), moving target detection using synthetic aperture radar (SAR), target imaging, energy management and system parameter relations. The discussed methods are confirmed by simulation stud

  5. Timed arrays wideband and time varying antenna arrays

    CERN Document Server

    Haupt, Randy L

    2015-01-01

    Introduces timed arrays and design approaches to meet the new high performance standards The author concentrates on any aspect of an antenna array that must be viewed from a time perspective. The first chapters briefly introduce antenna arrays and explain the difference between phased and timed arrays. Since timed arrays are designed for realistic time-varying signals and scenarios, the book also reviews wideband signals, baseband and passband RF signals, polarization and signal bandwidth. Other topics covered include time domain, mutual coupling, wideband elements, and dispersion. The auth

  6. High spatial frequency laser induced periodic surface structure formation in germanium by mid-IR femtosecond pulses

    CERN Document Server

    Austin, Drake R; Lai, Yu Hang; Wang, Zhou; Zhang, Kaikai; Li, Hui; Blaga, Cosmin I; Yi, Allen Y; DiMauro, Louis F; Chowdhury, Enam A

    2016-01-01

    Formation of high spatial frequency laser induced periodic surface structures (HSFL) in germanium by femtosecond mid-IR pulses with wavelengths between $\\lambda=2.0$ and $3.6 \\; \\mathrm{\\mu m}$ was studied with varying angle of incidence and polarization. The period of these structures varied from $\\lambda/3$ to $\\lambda/8$. A modified surface-scattering model including Drude excitation and the optical Kerr effect explains spatial period scaling of HSFL across the mid-IR wavelengths. Transmission electron microscopy (TEM) shows the presence of a $30 \\; \\mathrm{n m}$ amorphous layer above the structure of crystalline germanium. Various mechanisms including two photon absorption and defect-induced amorphization are discussed as probable causes for the formation of this layer.

  7. Multiple implantation and multiple annealing of phosphorus doped germanium to achieve n-type activation near the theoretical limit

    Science.gov (United States)

    Kim, Jeehwan; Bedell, Stephen W.; Sadana, Devendra K.

    2012-09-01

    Full activation of n-type dopant in germanium (Ge) reaching to its solid solubility has never been achieved by using ion implantation doping technique. This is because implantation of dopants always leaves defects such as vacancy and interstitials in the Ge crystal. While implantation-induced defects are electrically neutral for the most of semiconductor materials, they are electrically positive for Ge resulting in compensation of n-type dopants. In this Letter, we verified that 5 × 1019 P/cm3 is the maximum active concentration, which can be fully activated in germanium "without leaving implantation damage" per implantation/annealing cycle. The repetition of implantation and annealing of phosphorous (P) with the concentration of 5 × 1019 cm-3 leads to the activation of 1 × 1020 P/cm3 close to its solid solubility limit of 2 × 1020 P/cm3.

  8. Evaluation of neutron background in cryogenic Germanium target for WIMP direct detection when using reactor neutrino detector as neutron veto

    Science.gov (United States)

    Xu, Ye; Lan, Jieqin; Bai, Ying; Gao, Weiwei

    2016-09-01

    A direct WIMP (Weakly Interacting Massive Particle) detector with a neutron veto system is designed to better reject neutrons. An experimental configuration is studied in the present paper: 984 Ge modules are placed inside a reactor neutrino detector. In order to discriminate between nuclear and electron recoil, both ionization and heat signatures are measured using cryogenic germanium detectors in this detection. The neutrino detector is used as a neutron veto device. The neutron background for the experimental design has been estimated using the Geant4 simulation. The results show that the neutron background can decrease to O(0.01) events per year per tonne of high purity Germanium. We calculate the sensitivity to spin-independent WIMP-nucleon elastic scattering. An exposure of one tonne × year could reach a cross-section of about 2×10-11 pb.

  9. Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations

    Science.gov (United States)

    Eneman, Geert; Roussel, Philippe; Brunco, David Paul; Collaert, Nadine; Mocuta, Anda; Thean, Aaron

    2016-08-01

    The conduction and valence band offsets between a strained silicon-germanium layer and a silicon-germanium substrate are reported for arbitrary substrate and channel crystal orientations. The offsets are calculated both for the case of biaxial stress, corresponding approximately to the stress state of a thin strained channel in a planar field-effect transistor (FET), and for uniaxial stress, which is the approximate stress state for strained channels in a FinFET configuration. Significant orientation dependence is found for the conduction band offset, overall leading to the strongest electron quantum confinement in biaxial-tensile stressed channels on {100}-oriented substrates, and uniaxial-tensile stressed channels in the ⟨100⟩ and ⟨110⟩ directions. For biaxially stressed layers on {111} substrates, the conduction band offset is significantly smaller than for {100} or {110} directions. For the valence band offset, the dependence on crystal orientation is found to be small.

  10. Probing lithium germanide phase evolution and structural change in a germanium-in-carbon nanotube energy storage system.

    Science.gov (United States)

    Tang, Wei; Liu, Yanpeng; Peng, Chengxin; Hu, Mary Y; Deng, Xuchu; Lin, Ming; Hu, Jian Zhi; Loh, Kian Ping

    2015-02-25

    Lithium alloys of group IV elements such as silicon and germanium are attractive candidates for use as anodes in high-energy-density lithium-ion batteries. However, the poor capacity retention arising from volume swing during lithium cycling restricts their widespread application. Herein, we report high reversible capacity and superior rate capability from core-shell structure consisting of germanium nanorods embedded in multiwall carbon nanotubes. To understand how the core-shell structure helps to mitigate volume swings and buffer against mechanical instability, transmission electron microscopy, X-ray diffraction, and in situ (7)Li nuclear magnetic resonance were used to probe the structural rearrangements and phase evolution of various Li-Ge alloy phases during (de)alloying reactions with lithium. The results provide insights into amorphous-to-crystalline transition and lithium germanide alloy phase transformation, which are important reactions controlling performance in this system. PMID:25646600

  11. Quantitative spectrographic determination of traces of germanium in lignite; Determinacion Espectrografica Cuantitativa de trazas de Germanio en Lignitos

    Energy Technology Data Exchange (ETDEWEB)

    Martin, M.; Roca, M.

    1972-07-01

    A burning technique in a d.c. arc at 10 amp has been employed. The standards have been prepared from a natural lignite with a low germanium content. In order to enhance sensitivity, AgCl, K{sub 2}SO{sub 4}, CuF{sub 2}, Sb{sub 2}S{sub 3} and Bi{sub 2}S{sub 3} have been tested as sweeping materials. Using 2% CuF{sub 2} a detection limit of 1 ppm germanium is attainable. Bi, Cu, Sb and Sn have been studied as internal standards: the former leads to the, highest precision (1 6%). Results show good agreement with those obtained by the addition method. (Author) 6 refs.

  12. US-ROK Action Sheet 34: Safeguards Application of a Hand-held Mechanically Cooled Germanium Spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Dreyer, J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Burks, M. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Ham, Y. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Kwak, S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-10-20

    This report summarizes results of Action Sheet 34 - for the cooperative efforts on the field testing and evaluation of a high-resolution, hand-held, gamma-ray spectrometer, known as SPG (Spectroscopic Planar Germanium), for safeguards application such as short notice inspections, UF6 analysis, enrichment determination, and other potential applications. The Spectroscopic Planar Germanium (SPG) has been demonstrated IAEA Physical Inventory Verification (PIV) in South Korea. This field test was a success and the feedback provided by KINAC, IAEA, and national laboratory staff was used to direct efforts to improve the instrument this year. Key points in this report include measurement results from PIV, analysis of spectra with commercially available Ortec U235 and PC-FRAM, and completion of tripod and tungsten collimator and integration of user feedback.

  13. Probing lithium germanide phase evolution and structural change in a germanium-in-carbon nanotube energy storage system.

    Science.gov (United States)

    Tang, Wei; Liu, Yanpeng; Peng, Chengxin; Hu, Mary Y; Deng, Xuchu; Lin, Ming; Hu, Jian Zhi; Loh, Kian Ping

    2015-02-25

    Lithium alloys of group IV elements such as silicon and germanium are attractive candidates for use as anodes in high-energy-density lithium-ion batteries. However, the poor capacity retention arising from volume swing during lithium cycling restricts their widespread application. Herein, we report high reversible capacity and superior rate capability from core-shell structure consisting of germanium nanorods embedded in multiwall carbon nanotubes. To understand how the core-shell structure helps to mitigate volume swings and buffer against mechanical instability, transmission electron microscopy, X-ray diffraction, and in situ (7)Li nuclear magnetic resonance were used to probe the structural rearrangements and phase evolution of various Li-Ge alloy phases during (de)alloying reactions with lithium. The results provide insights into amorphous-to-crystalline transition and lithium germanide alloy phase transformation, which are important reactions controlling performance in this system.

  14. Ion-assisted deposition of yttrium fluoride as a substitute for thorium fluoride: application to infrared antireflection coating on germanium

    Science.gov (United States)

    Robic, Jean-Yves; Rolland, Bernard; Deutsch, Jean-Claude; Gallais, Patrick

    1994-11-01

    Yttrium fluoride has been proposed as a substitute for thorium fluoride in anti-reflection coatings for the infrared range. We have studied the ion assisted deposition (IAD) of YF3 in order to obtain dense and low absorbency layers in the 8 to 12 mm spectral window. Refractive index and extinction coefficient of this fluoride were determined from spectrophotometry measurements. We have then associated the YF3 with ZnS and Ge layers so as to obtain four layer anti-reflection coatings on germanium. The stress induced by each layer in the coating was measured and the sum was shown to be equal to the stress of the total coating. Eventually, an industrial, high efficiency, both side anti-reflection coating on germanium was developed using IAD YF3 film.

  15. Microreactor Array Device

    Science.gov (United States)

    Wiktor, Peter; Brunner, Al; Kahn, Peter; Qiu, Ji; Magee, Mitch; Bian, Xiaofang; Karthikeyan, Kailash; Labaer, Joshua

    2015-03-01

    We report a device to fill an array of small chemical reaction chambers (microreactors) with reagent and then seal them using pressurized viscous liquid acting through a flexible membrane. The device enables multiple, independent chemical reactions involving free floating intermediate molecules without interference from neighboring reactions or external environments. The device is validated by protein expressed in situ directly from DNA in a microarray of ~10,000 spots with no diffusion during three hours incubation. Using the device to probe for an autoantibody cancer biomarker in blood serum sample gave five times higher signal to background ratio compared to standard protein microarray expressed on a flat microscope slide. Physical design principles to effectively fill the array of microreactors with reagent and experimental results of alternate methods for sealing the microreactors are presented.

  16. The Submillimeter Array Polarimeter

    OpenAIRE

    Marrone, Daniel P.; Rao, Ramprasad

    2008-01-01

    We describe the Submillimeter Array (SMA) Polarimeter, a polarization converter and feed multiplexer installed on the SMA. The polarimeter uses narrow-band quarter-wave plates to generate circular polarization sensitivity from the linearly-polarized SMA feeds. The wave plates are mounted in rotation stages under computer control so that the polarization handedness of each antenna is rapidly selectable. Positioning of the wave plates is found to be highly repeatable, better than 0.2 degrees. A...

  17. The Murchison Widefield Array

    CERN Document Server

    Mitchell, Daniel A; Ord, Stephen M; Bernardi, Gianni; Wayth, Randall B; Edgar, Richard G; Clark, Michael A; Dal, Kevin; Pfister, Hanspeter; Gleadow, Stewart J; Arcus, W; Briggs, F H; Benkevitch, L; Bowman, J D; Bunton, J D; Burns, S; Cappallo, R J; Corey, B E; de Oliveira-Costa, A; Desouza, L; Doeleman, S S; Derome, M F; Emrich, D; Glossop, M; Goeke, R; Krishna, M R Gopala; Hazelton, B; Herne, D E; Hewitt, J N; Kamini, P A; Kaplan, D L; Kasper, J C; Kincaid, B B; Kocz, J; Kowald, E; Kratzenberg, E; Kumar, D; Lonsdale, C J; Lynch, M J; Madhavi, S; Matejek, M; McWhirter, S R; Morales, M F; Morgan, E; Oberoi, D; Pathikulangara, J; Prabu, T; Rogers, A; Salah, J E; Sault, R J; Shankar, N Udaya; Srivani, K S; Stevens, J; Tingay, S J; Vaccarella, A; Waterson, M; Webster, R L; Whitney, A R; Williams, A; Williams, C

    2010-01-01

    It is shown that the excellent Murchison Radio-astronomy Observatory site allows the Murchison Widefield Array to employ a simple RFI blanking scheme and still calibrate visibilities and form images in the FM radio band. The techniques described are running autonomously in our calibration and imaging software, which is currently being used to process an FM-band survey of the entire southern sky.

  18. The Cherenkov Telescope Array

    OpenAIRE

    Bigongiari, Ciro

    2016-01-01

    The Cherenkov Telescope Array (CTA) is planned to be the next generation ground based observatory for very high energy (VHE) gamma-ray astronomy. Gamma-rays provide a powerful insight into the non-thermal universe and hopefully a unique probe for new physics. Imaging Cherenkov telescopes have already discovered more than 170 VHE gamma-ray emitters providing plentiful of valuable data and clearly demonstrating the power of this technique. In spite of the impressive results there are indication...

  19. Solar collector array

    Science.gov (United States)

    Hall, John Champlin; Martins, Guy Lawrence

    2015-09-06

    A method and apparatus for efficient manufacture, assembly and production of solar energy. In one aspect, the apparatus may include a number of modular solar receiver assemblies that may be separately manufactured, assembled and individually inserted into a solar collector array housing shaped to receive a plurality of solar receivers. The housing may include optical elements for focusing light onto the individual receivers, and a circuit for electrically connecting the solar receivers.

  20. Supersymetric laser arrays

    OpenAIRE

    El-Ganainy, Ramy; Ge, Li; Khajavikhan, Mercedeh; Christodoulides, Demetrios

    2015-01-01

    We introduce the concept of supersymmetric laser arrays that consists of a main optical lattice and its superpartner structure, and we investigate the onset of their lasing oscillations. Due to the coupling of the two constituent lattices, their degenerate optical modes form doublets, while the extra mode associated with unbroken supersymmetry forms a singlet state. Singlet lasing can be achieved for a wide range of design parameters either by introducing stronger loss in the partner lattice ...

  1. The Square Kilometre Array

    OpenAIRE

    Lazio, Joseph

    2009-01-01

    The Square Kilometre Array (SKA) is intended as the next-generation radio telescope and will address fundamental questions in astrophysics, physics, and astrobiology. The international science community has developed a set of Key Science Programs: (1) Emerging from the Dark Ages and the Epoch of Reionization, (2) Galaxy Evolution, Cosmology, and Dark Energy, (3) The Origin and Evolution of Cosmic Magnetism, (4) Strong Field Tests of Gravity Using Pulsars and Black Holes, and (5) The Cradle of...

  2. Photovoltaic cell array

    Science.gov (United States)

    Eliason, J. T. (Inventor)

    1976-01-01

    A photovoltaic cell array consisting of parallel columns of silicon filaments is described. Each fiber is doped to produce an inner region of one polarity type and an outer region of an opposite polarity type to thereby form a continuous radial semi conductor junction. Spaced rows of electrical contacts alternately connect to the inner and outer regions to provide a plurality of electrical outputs which may be combined in parallel or in series.

  3. The TALE Infill Array

    Science.gov (United States)

    Bergman, Douglas

    2009-05-01

    The TALE Infill Array in conjunction with the TALE Tower Detector will provide hybrid coverage of the cosmic ray energy spectrum down to 3x10^16 eV. It will consist of about 100, two square meter scintillators on the surface spaced at 400 m; and 24 buried twelve square meter scintillators. The combination of surface and underground detectors will allow for the determination of the muon content of showers and thus give a handle on cosmic ray composition.

  4. Spaceborne Processor Array

    Science.gov (United States)

    Chow, Edward T.; Schatzel, Donald V.; Whitaker, William D.; Sterling, Thomas

    2008-01-01

    A Spaceborne Processor Array in Multifunctional Structure (SPAMS) can lower the total mass of the electronic and structural overhead of spacecraft, resulting in reduced launch costs, while increasing the science return through dynamic onboard computing. SPAMS integrates the multifunctional structure (MFS) and the Gilgamesh Memory, Intelligence, and Network Device (MIND) multi-core in-memory computer architecture into a single-system super-architecture. This transforms every inch of a spacecraft into a sharable, interconnected, smart computing element to increase computing performance while simultaneously reducing mass. The MIND in-memory architecture provides a foundation for high-performance, low-power, and fault-tolerant computing. The MIND chip has an internal structure that includes memory, processing, and communication functionality. The Gilgamesh is a scalable system comprising multiple MIND chips interconnected to operate as a single, tightly coupled, parallel computer. The array of MIND components shares a global, virtual name space for program variables and tasks that are allocated at run time to the distributed physical memory and processing resources. Individual processor- memory nodes can be activated or powered down at run time to provide active power management and to configure around faults. A SPAMS system is comprised of a distributed Gilgamesh array built into MFS, interfaces into instrument and communication subsystems, a mass storage interface, and a radiation-hardened flight computer.

  5. Array processor architecture

    Science.gov (United States)

    Barnes, George H. (Inventor); Lundstrom, Stephen F. (Inventor); Shafer, Philip E. (Inventor)

    1983-01-01

    A high speed parallel array data processing architecture fashioned under a computational envelope approach includes a data base memory for secondary storage of programs and data, and a plurality of memory modules interconnected to a plurality of processing modules by a connection network of the Omega gender. Programs and data are fed from the data base memory to the plurality of memory modules and from hence the programs are fed through the connection network to the array of processors (one copy of each program for each processor). Execution of the programs occur with the processors operating normally quite independently of each other in a multiprocessing fashion. For data dependent operations and other suitable operations, all processors are instructed to finish one given task or program branch before all are instructed to proceed in parallel processing fashion on the next instruction. Even when functioning in the parallel processing mode however, the processors are not locked-step but execute their own copy of the program individually unless or until another overall processor array synchronization instruction is issued.

  6. Energy-resolved momentum density of amorphous germanium and the effect of hydrogen adsorption by (e,2e) spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Y.Q.; Storer, P.; Kheifets, A.S.; McCarthy, I.E.; Weigold, E.

    1995-01-01

    The energy-resolved momentum density of evaporated amorphous germanium has been studied using a surface-sensitive solid state (e,2e) spectrometer with estimated energy and momentum resolutions of about 2.0 eV and 0.15 au, respectively, and has been compared with a LMTO (linear muffin-tin orbitals) calculation for crystalline germanium. The density consists of two main features: one disperses upwards from around -13 eV at zero momentum to around -6 eV at a momentum value of 0.85 au, the other appears throughout the momentum values investigated (0 to 1.6 au) and is confined within 7 eV below the valence band maximum. The former is identified as being due to the lower valence band of the germanium and agrees well with the LMTO calculation both in dispersion and in intensity, whereas only part of the intensity of the latter feature can be attributed to the upper valence bands. Hydrogen adsorption on the germanium surface reduces the intensity of the upper feature, most noticeably at momenta from 0.65 to 0.85 au, and introduces features around energies of -7 to -13 eV between momenta of 0.15 to 0.85 au. On this basis, contributions to the momentum density from the dangling bonds on the surface and those due to hydrogen adsorption are estimated. These results are discussed in association with early photoemission studies of the same material. 21 refs., 10 figs.

  7. Mixed Frequency Ultrasound Phased Array

    Institute of Scientific and Technical Information of China (English)

    香勇; 霍健; 施克仁; 陈以方

    2004-01-01

    A mixed frequency ultrasonic phased array (MPA) was developed to improve the focus, in which the element excitation frequencies are not all the same as in a normal constant frequency phased array. A theoretical model of the mixed frequency phased array based on the interference principle was used to simulate the array's sound distribution. The pressure intensity in the array focal area was enhanced and the scanning area having effective contrast resolution was enlarged. The system is especially useful for high intensity focused ultrasound (HIFU) with more powerful energy and ultrasound imaging diagnostics with improved signal to noise ratios, improved beam forming and more uniform imaging quality.

  8. Extraction separation of germanium with potassium iodide-1-propanol-germanium(Ⅳ)ternary complex%碘化钾-正丙醇-锗(Ⅳ)三元缔合物萃取分离锗

    Institute of Scientific and Technical Information of China (English)

    韩金土; 司学芝; 张会杰; 马万山

    2012-01-01

    The extraction and separation behaviors of germanium by potassium iodide - 1-propanol -germanium (Ⅳ) complex and the separation conditions of some metal ions were studied. The results showed that sodium chloride could separate the 1-propanol aqueous solution into two phases. In phase separation process, the complex[GeI6,2- ][C3H7OH2+]2 formed from GeI6,2- (which was generated from germanium(Ⅳ) and potassium iodide) and protonized 1-propanol (C3H7OH2,+) could be fully extracted by 1-propanol phase. The extraction rate of germanium(Ⅳ) was higher than 98. 4% when the concentrations of 1-propanol,potassium iodide and sodium chloride were 30%(V/V) ,8. 0 × 10-3 mol/L and 0. 20 g/mL,respectively. Meanwhile,Zn2+ ,Fe2+ ,Mg2+ ,Ni2+ ,Co2+ ,Mn2+ ,Ag+ , Al3+ and Cr3+ could not be extracted,realizing the separation of germanium(Ⅳ) from these metal ions.%探讨了碘化钾-正丙醇-锗(Ⅳ)三元缔合物萃取分离锗的行为及与一些金属离子分离的条件.结果表明,氯化钠能将正丙醇的水溶液分成两相,在分相过程中,Ge(Ⅳ)与碘化钾生成的GeI62-与质子化正丙醇(C3H7OH2+)形成的缔合物[GeI62-][C3H7OH2+]2能被正丙醇相完全萃取.当正丙醇、碘化钾和氯化钠的浓度分别为30%(V/V)、8.0×10-3 mol/L、0.20 g/mL时,Ge(Ⅳ)的萃取率达到98.4%以上,Zn2+、Fe2+、Mg2+、Ni2+、Co2+、Mn2+、Ag+、Al3+和Cr3+基本不被萃取,实现了Ge(Ⅳ)与上述金属离子的分离.

  9. Geant4 simulation study of Indian National Gamma Array at TIFR

    International Nuclear Information System (INIS)

    A Geant4 simulation code for the Indian National Gamma Array (INGA) consisting of 24 Compton suppressed clover high purity germanium (HPGe) detectors has been developed. The calculated properties in the energy range that is of interest for nuclear γ-ray spectroscopy are spectral distributions for various standard radioactive sources, intrinsic peak efficiencies and peak-to-total (P/T) ratios in various configurations such as singles, add-back and Compton suppressed mode. The principle of operation of the detectors in add-back and Compton suppression mode have been reproduced in the simulation. The reliability of the calculation is checked by comparison with the experimental data for various γ-ray energies up to 5 MeV. The comparison between simulation results and experimental data demonstrate the need of incorporating the exact geometry of the clover detectors, Anti-Compton Shield and other surrounding materials in the array to explain the detector response to the γ-ray. Several experimental effects are also investigated. These include the geometrical correction to angular distribution, crosstalk probability and the impact of heavy metal collimators between the target and the array on the P/T ratio

  10. Geant4 simulation study of Indian National Gamma Array at TIFR

    Science.gov (United States)

    Saha, S.; Palit, R.; Sethi, J.; Biswas, S.; Singh, P.

    2016-03-01

    A Geant4 simulation code for the Indian National Gamma Array (INGA) consisting of 24 Compton suppressed clover high purity germanium (HPGe) detectors has been developed. The calculated properties in the energy range that is of interest for nuclear γ-ray spectroscopy are spectral distributions for various standard radioactive sources, intrinsic peak efficiencies and peak-to-total (P/T) ratios in various configurations such as singles, add-back and Compton suppressed mode. The principle of operation of the detectors in add-back and Compton suppression mode have been reproduced in the simulation. The reliability of the calculation is checked by comparison with the experimental data for various γ-ray energies up to 5 MeV. The comparison between simulation results and experimental data demonstrate the need of incorporating the exact geometry of the clover detectors, Anti-Compton Shield and other surrounding materials in the array to explain the detector response to the γ-ray. Several experimental effects are also investigated. These include the geometrical correction to angular distribution, crosstalk probability and the impact of heavy metal collimators between the target and the array on the P/T ratio.

  11. Pulsed laser ablation of Germanium under vacuum and hydrogen environments at various fluences

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Muhammad Hassan [Centre for Advanced Studies in Physics, Government College University, Lahore (Pakistan); Bashir, Shazia, E-mail: shaziabashir@gcu.edu.pk [Centre for Advanced Studies in Physics, Government College University, Lahore (Pakistan); Rafique, Muhammad Shahid [Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Dawood, Asadullah; Akram, Mahreen; Mahmood, Khaliq; Hayat, Asma; Ahmad, Riaz; Hussain, Tousif [Centre for Advanced Studies in Physics, Government College University, Lahore (Pakistan); Mahmood, Arshad [National Institute of Laser and Optronics (NILOP), Islamabad (Pakistan)

    2015-07-30

    Highlights: • Germanium targets were exposed under vacuum and H{sub 2} environment by nanosecond laser pulses. • The effect of laser fluence and ambient environment has been investigated. • The surface morphology is investigated by SEM analysis. • Raman and FTIR Spectroscopy are performed to reveal structural modification. • Electrical conductivity is probed by four probe method. - Abstract: Laser fluence and ambient environment play a significant role for the formation and development of the micro/nano-structures on the laser irradiated targets. Single crystal (1 0 0) Germanium (Ge) has been ablated under two environments of vacuum (10{sup −3} Torr) and hydrogen (100 Torr) at various fluences ranging from 4.5 J cm{sup −2} to 6 J cm{sup −2}. For this purpose KrF Excimer laser with wavelength of 248 nm, pulse duration of 18 ns and repetition rate of 20 Hz has been employed. Surface morphology has been observed by Scanning Electron Microscope (SEM). Whereas, structural modification of irradiated targets was explored by Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy. Electrical conductivity of the irradiated Ge is measured by four probe method. SEM analysis exhibits the formation of laser-induced periodic surface structures (LIPSS), cones and micro-bumps in both ambient environments (vacuum and hydrogen). The formation as well as development of these structures is strongly dependent upon the laser fluence and environmental conditions. The periodicity of LIPSS or ripples varies from 38 μm to 60 μm in case of vacuum whereas in case of hydrogen environment, the periodicity varies from 20 μm to 45 μm. The difference in number of ripples and periodicity as well as in shape and size of cones and bumps in vacuum and hydrogen is explained on the basis of confinement and shielding effect of plasma. FTIR spectroscopy reveals that no new bands are formed for laser ablated Ge under vacuum, whereas C−H stretching vibration band is

  12. High-Performance Silicon-Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging

    Science.gov (United States)

    Romanjek, K.; Vesin, S.; Aixala, L.; Baffie, T.; Bernard-Granger, G.; Dufourcq, J.

    2015-06-01

    Some of the energy used in transportation and industry is lost as heat, often at high-temperatures, during conversion processes. Thermoelectricity enables direct conversion of heat into electricity, and is an alternative to the waste-heat-recovery technology currently used, for example turbines and other types of thermodynamic cycling. The performance of thermoelectric (TE) materials and modules has improved continuously in recent decades. In the high-temperature range ( T hot side > 500°C), silicon-germanium (SiGe) alloys are among the best TE materials reported in the literature. These materials are based on non-toxic elements. The Thermoelectrics Laboratory at CEA (Commissariat à l'Energie Atomique et aux Energies Alternatives) has synthesized n and p-type SiGe pellets, manufactured TE modules, and integrated these into thermoelectric generators (TEG) which were tested on a dedicated bench with hot air as the source of heat. SiGe TE samples of diameter 60 mm were created by spark-plasma sintering. For n-type SiGe doped with phosphorus the peak thermoelectric figure of merit reached ZT = 1.0 at 700°C whereas for p-type SiGe doped with boron the peak was ZT = 0.75 at 700°C. Thus, state-of-the-art conversion efficiency was obtained while also achieving higher production throughput capacity than for competing processes. A standard deviation output reaching 1.9 ± 0.2 W for a 370 degree temperature difference. When the temperature difference was increased to 500°C, electrical power output increased to >3.6 W. An air-water heat exchanger was developed and 30 TE modules were clamped and connected electrically. The TEG was tested under vacuum on a hot-air test bench. The measured output power was 45 W for an air flow of 16 g/s at 750°C. The hot surface of the TE module reached 550°C under these conditions. Silicon-germanium TE modules can survive such temperatures, in contrast with commercial modules based on bismuth telluride, which are limited to 400°C.

  13. The influence of phosphorus nutritional status on the uptake of germanium in Panicum miliaceum and Brassica alba

    Science.gov (United States)

    Kaden, Ute Susanne; Székely, Balázs; Wiche, Oliver

    2015-04-01

    In order to investigate the influence of the phosphorus nutritional status on the uptake of germanium (Ge) in biomass two species, white millet (Panicum miliaceum) and white mustard (Brassica alba) were grown and sampled in a greenhouse experiment. The cultivation took place on two different substrates. The plants were fertilized with different nutrient solutions which differed in their phosphate content, and artificial addition of Ge was held via the casting solution. During the test period, measurements of the pH value, electric conductivity, and phosphate content of the soil solution were conducted. To transfer germanium from soil and plant material in solution, melting and microwave digestion processes were done. The experiment showed that in both species the additional Ge supply also leads to an increasing germanium content in the aboveground plant material. The two species, however, behave differently in response to this Ge supply. Panicum miliaceum accumulates Ge in the above-ground parts of plants stem, leaf and fruit to a much greater extent than Brassica alba. On the other hand the Ge accumulation in the roots of both B. alba and P. miliaceum was very high. In case of B. alba the root content was found by far higher as compared to the other parts of the plant. The addition of phosphate in the system changes the behavior. Without additional Ge its natural uptake from soil decreases in both species but in B. alba it is more characteristic. Increasing Ge supply (for both species) leads to an increased Ge uptake, until it reaches a maximum, regardless of the presence of phosphate addition. Phosphate, on the other hand, has positive effects on Ge uptake only in the case of B. alba roots, and to a limited extent in roots of P. miliaceum. In addition, for Panicum miliaceum an increase of germanium mainly in the underground parts was achieved. A further addition of phosphate did not have a positive effect on a greater enrichment of germanium. Whereas in Brassica

  14. CVD growth of single-crystal monolayer graphene on H-terminated germanium surface

    Science.gov (United States)

    Whang, Dongmok

    2015-03-01

    Large-area graphene has been grown by catalytic chemical vapor deposition (CVD) on various metal substrates. However, the uniform growth of single-crystal graphene over wafer-scale areas remains a challenge toward the commercial realization of various electronic, photonic, mechanical, and other devices based upon the outstanding properties of graphene. In this talk, we present the growth of single-crystal monolayer graphene on hydrogen-terminated germanium (Ge) surface. A single-crystal Ge substrate is a promising candidate for the growth of single-crystal graphene, because of (i) its catalytic activity for the catalytic decomposition of the formation of graphitic carbon on the surface; (ii) the extremely low solubility of carbon in Ge even at its melting temperature, enabling growth of complete monolayer graphene; (iii) the anisotropic atomic arrangement of single crystal Ge surface, enabling aligned growth of multiple seeds; (iv) the availability of a large area single-crystal surface via epitaxial Ge growth on Si wafers. We observed that well-defined atomic arrangement on the single crystal Ge surface enabled aligned growth of multiple seeds which can merge to single crystal graphene. Furthermore very weak van der Waals interaction between graphene and underlying Ge surface enabled facile dry transfer of graphene and recycling the Ge/Si wafer for continuing growth.

  15. Energy dependence of the isotopic effect in the (n,p) reaction on the germanium isotopes

    International Nuclear Information System (INIS)

    Cross sections for 70,72,73,74Ge(n, p) 70,72,73,74Ga, 70Ge(n, 2n)69Ge, 72Ge (n, α)69Znm and 74Ge(n, α)71Znm reactions are measured in the energy range from 13.0 to 16.6 MeV by the activation method using Ge(Li) detector γ-ray spectroscopy and compared with predictions of the reaction model incorporating preequilibrium and equilibrium emission mechanisms to interpret the energy dependence of the isotopic effect occuring in the (n, p) reaction. The fitted single-particle state-density parameters g, determined here for the germaniums are discussed together with the g-values found previously for the Se, Zr and Pd isotopic chains. A validity of the consistency condition between the precompound and compound models, which relates g to the experimental level-density parameter a via a=π2g/6 is demonstrated. (orig.)

  16. Activation cross sections of longer-lived radionuclides produced in germanium by alpha particle irradiation

    Science.gov (United States)

    Takács, S.; Takács, M. P.; Ditrói, F.; Aikawa, M.; Haba, H.; Komori, Y.

    2016-09-01

    The cross sections of alpha particles induced nuclear reactions on natural germanium were investigated by using the standard stacked foil target technique, the activation method and high resolution gamma spectrometry. Targets with thickness of about 1 μm were prepared from natural Ge by vacuum evaporation onto 25 μm thick polyimide (Kapton) backing foils. Stacks were composed of Kapton-Ge-Ge-Kapton sandwich target foils and additional titanium monitor foils with nominal thickness of 11 μm to monitor the beam parameters using the natTi(α,x)51Cr reaction. The irradiations were done with Eα = 20.7 and Eα = 51.25 MeV, Iα = 50 nA alpha particle beams for about 1 h. Direct or cumulative activation cross sections were determined for production of the 72,73,75Se, 71,72,74,76,78As, and 69Ge radionuclides. The obtained experimental cross sections were compared to the results of theoretical calculations taken from the TENDL data library based on the TALYS computer code. A comparison was made with available experimental data measured earlier. Thick target yields were deduced from the experimental cross sections and compared with the data published before.

  17. Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bands

    Science.gov (United States)

    Jain, Abhinav; Rojas-Sanchez, Juan-Carlos; Cubukcu, Murat; Peiro, Julian; Le Breton, Jean-Christophe; Vergnaud, Céline; Augendre, Emmanuel; Vila, Laurent; Attané, Jean-Philippe; Gambarelli, Serge; Jaffrès, Henri; George, Jean-Marie; Jamet, Matthieu

    2013-04-01

    Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in the electrical spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. Here we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of n-Si and n-Ge using a CoFeB/MgO tunnel contact. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from approximately 150 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with the standard spin diffusion model. More interestingly, in the case of germanium, we demonstrate a significant modulation of the spin signal by applying a back-gate voltage to the conduction channel. We also observe the inverse spin Hall effect in Ge by spin pumping from the CoFeB electrode. Both observations are consistent with spin accumulation in the Ge conduction band.

  18. Formation of Nanotwin Networks during High-Temperature Crystallization of Amorphous Germanium

    Science.gov (United States)

    Sandoval, Luis; Reina, Celia; Marian, Jaime

    2015-11-01

    Germanium is an extremely important material used for numerous functional applications in many fields of nanotechnology. In this paper, we study the crystallization of amorphous Ge using atomistic simulations of critical nano-metric nuclei at high temperatures. We find that crystallization occurs by the recurrent transfer of atoms via a diffusive process from the amorphous phase into suitably-oriented crystalline layers. We accompany our simulations with a comprehensive thermodynamic and kinetic analysis of the growth process, which explains the energy balance and the interfacial growth velocities governing grain growth. For the crystallographic orientation, we find a degenerate atomic rearrangement process, with two zero-energy modes corresponding to a perfect crystalline structure and the formation of a Σ3 twin boundary. Continued growth in this direction results in the development a twin network, in contrast with all other growth orientations, where the crystal grows defect-free. This particular mechanism of crystallization from amorphous phases is also observed during solid-phase epitaxial growth of semiconductor crystals, where growth is restrained to one dimension. We calculate the equivalent X-ray diffraction pattern of the obtained nanotwin networks, providing grounds for experimental validation.

  19. Background intercomparison with escape-suppressed germanium detectors in underground mines

    International Nuclear Information System (INIS)

    A key requirement for underground nuclear astrophysics experiments is the very low background level in germanium detectors underground. The reference for these purposes is the world's so far only underground accelerator laboratory for nuclear astrophysics, LUNA. LUNA is located deep underground in the Gran Sasso laboratory in Italy, shielded from cosmic rays by 1400 m of rock. The background at LUNA was studied in detail using an escape-suppressed Clover-type HPGe detector. Exactly the same detector was subsequently transported to the Felsenkeller underground laboratory in Dresden, shielded by 45 m of rock, and the background was shown to be only a factor of three higher than at LUNA when comparing the escape-suppressed spectra, with interesting consequences for underground nuclear astrophysics. As the next step of a systematic study of the effects of a combination of active and passive shielding on the cosmic ray induced background, this detector is now being brought to the ''Reiche Zeche'' mine in Freiberg/Sachsen, shielded by 150 m of rock. The data from the Freiberg measurement are shown and discussed.

  20. Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer

    Science.gov (United States)

    Tran, Tuan T.; Alkhaldi, Huda S.; Gandhi, Hemi H.; Pastor, David; Huston, Larissa Q.; Wong-Leung, Jennifer; Aziz, Michael J.; Williams, J. S.

    2016-08-01

    Ion implantation with high ion fluences is indispensable for successful use of germanium (Ge) in the next generation of electronic and photonic devices. However, Ge readily becomes porous after a moderate fluence implant ( ˜1 ×1015 ion cm-2 ) at room temperature, and for heavy ion species such as tin (Sn), holding the target at liquid nitrogen (LN2) temperature suppresses porosity formation only up to a fluence of 2 ×1016 ion cm-2 . We show, using stylus profilometry and electron microscopy, that a nanometer scale capping layer of silicon dioxide significantly suppresses the development of the porous structure in Ge during a S n - implant at a fluence of 4.5 ×1016 ion cm-2 at LN2 temperature. The significant loss of the implanted species through sputtering is also suppressed. The effectiveness of the capping layer in preventing porosity, as well as suppressing sputter removal of Ge, permits the attainment of an implanted Sn concentration in Ge of ˜15 at.% , which is about 2.5 times the maximum value previously attained. The crystallinity of the Ge-Sn layer following pulsed-laser-melting induced solidification is also greatly improved compared with that of uncapped material, thus opening up potential applications of the Ge-Sn alloy as a direct bandgap material fabricated by an ion beam synthesis technique.

  1. Protein patterning on polycrystalline silicon-germanium via standard UV lithography for bioMEMS applications

    Energy Technology Data Exchange (ETDEWEB)

    Lenci, S., E-mail: silvia.lenci@gmail.com [Dipartimento di Ingegneria dell' Informazione, University of Pisa, Via G. Caruso 16, I-56122 Pisa (Italy); imec, Kapeldreef 75, Leuven B-3001 (Belgium); Tedeschi, L.; Domenici, C.; Lande, C. [Istituto di Fisiologia Clinica, CNR, via G. Moruzzi 1, Pisa I-56124 (Italy); Nannini, A.; Pennelli, G.; Pieri, F. [Dipartimento di Ingegneria dell' Informazione, University of Pisa, Via G. Caruso 16, I-56122 Pisa (Italy); Severi, S. [imec, Kapeldreef 75, Leuven B-3001 (Belgium)

    2010-10-12

    Polycrystalline silicon-germanium (poly-SiGe) is a promising structural material for the post-processing of micro electro-mechanical systems (MEMS) on top of complementary metal-oxide-semiconductor (CMOS) substrates. Combining MEMS and CMOS allows for the development of high-performance devices. We present for the first time selective protein immobilization on top of poly-SiGe surfaces, an enabling technique for the development of novel poly-SiGe based MEMS biosensors. Active regions made of 3-aminopropyl-triethoxysilane (APTES) were defined using silane deposition onto photoresist patterns followed by lift-off in organic solvents. Subsequently, proteins were covalently bound on the created APTES patterns. Fluorescein-labeled human serum albumin (HSA) was used to verify the immobilization procedure while the binding capability of the protein layer was tested by an antigen-labeled antibody pair. Inspection by fluorescence microscopy showed protein immobilization inside the desired bioactive areas and low non-specific adsorption outside the APTES pattern. Furthermore, the quality of the silane patches was investigated by treatment with 30 nm-diameter gold nanoparticles and scanning electron microscope observation. The developed technique is therefore a promising first step towards the realization of poly-SiGe based biosensors.

  2. Improved WIMP-search reach of the CDMS II germanium data

    Energy Technology Data Exchange (ETDEWEB)

    Agnese, R.; Anderson, A. J.; Asai, M.; Balakishiyeva, D.; Barker, D.; Basu Thakur, R.; Bauer, D. A.; Billard, J.; Borgland, A.; Bowles, M. A.; Brandt, D.; Brink, P. L.; Bunker, R.; Cabrera, B.; Caldwell, D. O.; Calkins, R.; Cerdeno, D. G.; Chagani, H.; Chen, Y.; Cooley, J.; Cornell, B.; Crewdson, C. H.; Cushman, Priscilla B.; Daal, M.; Di Stefano, P. C.; Doughty, T.; Esteban, L.; Fallows, S.; Figueroa-Feliciano, E.; Godfrey, G. L.; Golwala, S. R.; Hall, Jeter C.; Harris, H. R.; Hertel, S. A.; Hofer, T.; Holmgren, D.; Hsu, L.; Huber, M. E.; Jardin, D. M.; Jastram, A.; Kamaev, O.; Kara, B.; Kelsey, M. H.; Kennedy, A.; Kiveni, M.; Koch, K.; Leder, A.; Loer, B.; Lopez Asamar, E.; Lukens, P.; Mahapatra, R.; Mandic, V.; McCarthy, K. A.; Mirabolfathi, N.; Moffatt, R. A.; Oser, S. M.; Page, K.; Page, W. A.; Partridge, R.; Pepin, M.; Phipps, A.; Prasad, K.; Pyle, M.; Qiu, H.; Rau, W.; Redl, P.; Reisetter, A.; Ricci, Y.; Rogers, H. E.; Saab, T.; Sadoulet, B.; Sander, J.; Schneck, K.; Schnee, R. W.; Scorza, S.; Serfass, B.; Shank, B.; Speller, D.; Toback, D.; Upadhyayula, S.; Villano, A. N.; Welliver, B.; Wilson, J. S.; Wright, D. H.; Yang, X.; Yellin, S.; Yen, J. J.; Young, B. A.; Zhang, J.

    2015-10-31

    CDMS II data from the five-tower runs at the Soudan Underground Laboratory were reprocessed with an improved charge-pulse fitting algorithm. Two new analysis techniques to reject surface-event backgrounds were applied to the 612 kg days germanium-detector weakly interacting massive particle (WIMP)-search exposure. An extended analysis was also completed by decreasing the 10 keV analysis threshold to ~5 keV, to increase sensitivity near a WIMP mass of 8 GeV/c2. After unblinding, there were zero candidate events above a deposited energy of 10 keV and six events in the lower-threshold analysis. This yielded minimum WIMP-nucleon spin-independent scattering cross-section limits of 1.8×10-44 and 1.18×10-41 at 90% confidence for 60 and 8.6 GeV/c2 WIMPs, respectively. This improves the previous CDMS II result by a factor of 2.4 (2.7) for 60 (8.6) GeV/c2 WIMPs.

  3. Search for global minimum geometries for medium sized germanium clusters: Ge12-Ge20

    Science.gov (United States)

    Bulusu, S.; Yoo, S.; Zeng, X. C.

    2005-04-01

    We have performed an unbiased search for the global minimum geometries of small-to-medium sized germanium clusters Gen(12⩽n⩽18) as well as a biased search (using seeding method) for Gen(17⩽n⩽20). We employed the basin-hopping algorithm coupled with the plane-wave pseudopotential density functional calculations. For each size, we started the unbiased search with using several structurally very different initial clusters, or we started the biased search with three different seeds. Irrespective of the initial structures of clusters we found that the obtained lowest-energy clusters of the size n =12-16 and 18 are the same. Among them, the predicted global minima of Gen(12⩽n⩽16) are identical to those reported previously [Shvartsburg et al., Phys. Rev. Lett. 83, 167 (1999)]. For n =17-20, we have identified two or three nearly isoenergetic low-lying isomers (for each size) that compete for the global minimum. Nearly all the low-lying clusters in the size range of 12⩽n⩽20 contain the tri-caped trigonal prism motif and are all prolate in geometry, in agreement with the experiment.

  4. Background intercomparison with escape-suppressed germanium detectors in underground mines

    Energy Technology Data Exchange (ETDEWEB)

    Szuecs, Tamas; Bemmerer, Daniel [Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden (Germany)

    2014-07-01

    A key requirement for underground nuclear astrophysics experiments is the very low background level in germanium detectors underground. The reference for these purposes is the world's so far only underground accelerator laboratory for nuclear astrophysics, LUNA. LUNA is located deep underground in the Gran Sasso laboratory in Italy, shielded from cosmic rays by 1400 m of rock. The background at LUNA was studied in detail using an escape-suppressed Clover-type HPGe detector. Exactly the same detector was subsequently transported to the Felsenkeller underground laboratory in Dresden, shielded by 45 m of rock, and the background was shown to be only a factor of three higher than at LUNA when comparing the escape-suppressed spectra, with interesting consequences for underground nuclear astrophysics. As the next step of a systematic study of the effects of a combination of active and passive shielding on the cosmic ray induced background, this detector is now being brought to the ''Reiche Zeche'' mine in Freiberg/Sachsen, shielded by 150 m of rock. The data from the Freiberg measurement are shown and discussed.

  5. Surface Passivation of Germanium Using NH3 Ambient in RTP for High Mobility MOS Structure

    Directory of Open Access Journals (Sweden)

    Anil G. Khairnar

    2013-05-01

    Full Text Available Ge CMOS is very striking for the post Si-CMOS technology. However, we have to attempt a number of challenges with regard to materials and their interface control. In this paper we have investigated the control of the interfacial properties of SiO2 / Ge gate stack structures by the thermal nitridation technique. Structural and electrical properties of SiO2 gate-dielectric metal-oxide-semiconductor (MOS capacitors deposited by sputtering on germanium are studied. The structural characterization confirmed that the thin film was free of physical defects and smooth surface of the films after PDA at 500 °C in N2 ambient. The smooth surface SiO2 thin films were used for Pt / SiO2 / GeON / Ge MOS structures fabrication. The MOS structure yields a low leakage current density of 9.16 × 10 – 6Acm – 2 at 1 V.

  6. The 14N(p,gamma)15O reaction studied with a composite germanium detector

    CERN Document Server

    Marta, M; Bemmerer, D; Broggini, C; Caciolli, A; Corvisiero, P; Costantini, H; Elekes, Z; Fulop, Zs; Gervino, G; Guglielmetti, A; Gustavino, C; Gyurky, Gy; Imbriani, G; Junker, M; Lemut, A; Limata, B; Mazzocchi, C; Menegazzo, R; Prati, P; Roca, V; Rolfs, C; Alvarez, C Rossi; Somorjai, E; Straniero, O; Strieder, F; Terrasi, F; Trautvetter, H P; Vomiero, A

    2011-01-01

    The rate of the carbon-nitrogen-oxygen (CNO) cycle of hydrogen burning is controlled by the 14N(p,gamma)15O reaction. The reaction proceeds by capture to the ground states and several excited states in O-15. In order to obtain a reliable extrapolation of the excitation curve to astrophysical energy, fits in the R-matrix framework are needed. In an energy range that sensitively tests such fits, new cross section data are reported here for the four major transitions in the 14N(p,gamma)15O reaction. The experiment has been performed at the Laboratory for Underground Nuclear Astrophysics (LUNA) 400 kV accelerator placed deep underground in the Gran Sasso facility in Italy. Using a composite germanium detector, summing corrections have been considerably reduced with respect to previous studies. The cross sections for capture to the ground state and to the 5181, 6172, and 6792 keV excited states in O-15 have been determined at 359, 380, and 399 keV beam energy. In addition, the branching ratios for the decay of the...

  7. Modeling and Analysis of Entropy Generation in Light Heating of Nanoscaled Silicon and Germanium Thin Films

    Directory of Open Access Journals (Sweden)

    José Ernesto Nájera-Carpio

    2015-07-01

    Full Text Available In this work, the irreversible processes in light heating of Silicon (Si and Germanium (Ge thin films are examined. Each film is exposed to light irradiation with radiative and convective boundary conditions. Heat, electron and hole transport and generation-recombination processes of electron-hole pairs are studied in terms of a phenomenological model obtained from basic principles of irreversible thermodynamics. We present an analysis of the contributions to the entropy production in the stationary state due to the dissipative effects associated with electron and hole transport, generation-recombination of electron-hole pairs as well as heat transport. The most significant contribution to the entropy production comes from the interaction of light with the medium in both Si and Ge. This interaction includes two processes, namely, the generation of electron-hole pairs and the transferring of energy from the absorbed light to the lattice. In Si the following contribution in magnitude comes from the heat transport. In Ge all the remaining contributions to entropy production have nearly the same order of magnitude. The results are compared and explained addressing the differences in the magnitude of the thermodynamic forces, Onsager’s coefficients and transport properties of Si and Ge.

  8. Fundamental aspects of nucleation and growth in the solution-phase synthesis of germanium nanocrystals

    KAUST Repository

    Codoluto, Stephen C.

    2010-01-01

    Colloidal Ge nanocrystals (NCs) were synthesized via the solution phase reduction of germanium(ii) iodide. We report a systematic investigation of the nanocrystal nucleation and growth as a function of synthesis conditions including the nature of coordinating solvents, surface bound ligands, synthesis duration and temperature. NC synthesis in reaction environments with weakly bound phosphine surface ligand led to the coalescence of nascent particles leading to ensembles with broad lognormal particle diameter distributions. Synthesis in the presence of amine or alkene ligands mitigated particle coalescence. High-resolution transmission electron micrographs revealed that NCs grown in the presence of weak ligands had a high crystal defect density whereas NCs grown in amine solutions were predominantly defect-free. We applied infrared spectroscopy to study the NC surface chemistry and showed that alkene ligands project the NCs from surface oxidation. Photoluminescence spectroscopy measurements showed that alkene ligands passivate surface traps, as indicated by infrared fluorescence, conversely oxidized phosphine and amine passivated NCs did not fluoresce. © 2010 The Royal Society of Chemistry.

  9. A Germanium Detector with Optimized Compton Veto for High Sensitivity at Low Energy

    Energy Technology Data Exchange (ETDEWEB)

    Friedrich, S

    2011-11-30

    We have built a prototype germanium detector with a Compton veto that is optimized for high sensitivity in the low-energy range around {approx}100 keV. It is specifically designed to address the problem to directly detect plutonium gamma emissions in spent nuclear fuel by non-destructive assay. This is not possible with current detectors due to the large low-energy background of Compton-scattered high-energy radiation from the fission products, whose gamma flux is at least 6 to 7 orders of magnitude higher than the Pu signal. Our instrument is designed to assess the feasibility to selectively suppress the background in the low-energy region around {approx}100 keV with the strongest Pu X-ray and gamma emissions lines. It employs a thin Ge detector with a large Compton veto directly behind it to suppress the background from forward-scattered radiation by anti-coincidence vetoing. This report summarizes the design considerations and the performance of the instrument.

  10. Effects of seed layer on the performance of microcrystalline silicon germanium solar cells

    Institute of Scientific and Technical Information of China (English)

    Cao Yu; Zhang Jianjun; Li Tianwei; Huang Zhenhua; Ma Jun; Yang Xu; Ni Jian

    2013-01-01

    Using plasma enhanced chemical vapor deposition (PECVD) at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium (μc-Si1-xGex:H) i-layer.The effects of seeding processes on the growth of μc-Si 1-x Gex:H i-layers and the performance of μc-Si1-x Gex:H p-in single junction solar cells are investigated.By applying this seeding method,the μc-Si 1-xGex:H solar cell shows a significant improvement in short circuit current density (Jsc) and fill factor (FF) with an acceptable performance of blue response as a μc-Si:H solar cell even when the Ge content x increases up to 0.3.Finally,an improved efficiency of 7.05% is achieved for the μc-Sio.7Ge0.3:H solar cell.

  11. Hydrogenated Amorphous Silicon Germanium Active Layer for Top Cell of a Multi Junction Cell Structure.

    Science.gov (United States)

    Cho, Jaehyun; Iftiquar, S M; Kim, Minbum; Park, Jinjoo; Jung, Junhee; Kim, Jiwoong; Yi, Junsin

    2016-05-01

    Intrinsic hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy is generally used in the bottom cell because of its low band gap. The a-SiGe:H has a higher photo conductivity in comparison to the a-Si:H; thus, it is expected that the a-SiGe:H can show better short circuit current density than that of the a-Si:H based solar cell. Therefore, we optimized a-SiGe:H active layer that can be a suitable choice for the front cell of a multi junction.solar cell. Furthermore, we carried out a comparative study of the solar cells that have a-SiGe:H and a-Si:H as respective active layers. The a-SiGe:H based solar cells show higher short circuit current density, while the a-Si:H based cells show higheropen circuit voltage. The current-voltage characteristics of these cells are as follows: (a) V(oc) = 770 mV, J(sc) = 15.0 mA/cm2, FF = 64.5%, and η = 7.47% for a-SiGe:H based cell; and (b) V(oc) = 826 mV, J(sc) = 13.63 mA/cm2, FF = 72.0%, and η = 8.1% for a-Si:H based cell. PMID:27483837

  12. Influence of germanium nano-inclusions on the thermoelectric power factor of bulk bismuth telluride alloy

    Energy Technology Data Exchange (ETDEWEB)

    Satyala, Nikhil; Zamanipour, Zahra; Norouzzadeh, Payam; Krasinski, Jerzy S.; Vashaee, Daryoosh, E-mail: daryoosh.vashaee@okstate.edu [School of Electrical and Computer Engineering, Helmerich Advanced Technology Research Center, Oklahoma State University, Tulsa, Oklahoma 74106 (United States); Tahmasbi Rad, Armin [School of Material Science and Engineering, Helmerich Advanced Technology Research Center, Oklahoma State University, Tulsa, Oklahoma 74106 (United States); Tayebi, Lobat, E-mail: daryoosh.vashaee@okstate.edu [School of Chemical Engineering, Oklahoma State University, Stillwater, Oklahoma 74078 (United States)

    2014-05-28

    Nanocomposite thermoelectric compound of bismuth telluride (Bi{sub 2}Te{sub 3}) with 5 at. % germanium nano-inclusions was prepared via mechanically alloying and sintering techniques. The influence of Ge nano-inclusions and long duration annealing on the thermoelectric properties of nanostructured Bi{sub 2}Te{sub 3} were investigated. It was found that annealing has significant effect on the carrier concentration, Seebeck coefficient, and the power factor of the thermoelectric compound. The systematic heat treatment also reduced the density of donor type defects thereby decreasing the electron concentration. While the as-pressed nanocomposite materials showed n-type properties, it was observed that with the increase of annealing time, the nanocomposite gradually transformed to an abundantly hole-dominated (p-type) sample. The long duration annealing (∼500 h) resulted in a significantly enhanced electrical conductivity pertaining to the augmentation in the density and the structural properties of the sample. Therefore, a simultaneous enhancement in both electrical and Seebeck coefficient characteristics resulted in a remarkable increase in the thermoelectric power factor.

  13. Need of internal amplification and germanium detector for investigation of rare physics processes

    International Nuclear Information System (INIS)

    To observe rare physics processes such as low energy neutrino, neutrinoless double beta decay, neutrino - nucleus coherent scattering cross section, search for suitable dark matter candidate etc., require detectors having low background and low threshold. To investigate the above mentioned processes one needs low background detector of mass several kilograms and with threshold less than 500 eV. Now-a-days, we have achieved detection threshold around 200 eV with Ultra-Low Energy High Purity Germanium detector in ionization mode. The drawback of common HPGe detectors is a rather high threshold of 2 to 10 KeV due to a leakage current, electronics and micro-phonic noises. Effective decrease in the threshold by any genuine means would be very attractive. We have started shading thoughts on the internal proportional amplification of signal method. Internal proportional amplification in the semiconductor detectors is realized in the silicon avalanche photodiodes (APD) and a gain of about 102-104 is achieved by avalanche multiplication of electrons at 5-6 x 105 V/cm strength of electric field in a narrow p-n junction having several mm3 sensitive volumes

  14. Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators.

    Science.gov (United States)

    Park, Sungbong; Tsuchizawa, Tai; Watanabe, Toshifumi; Shinojima, Hiroyuki; Nishi, Hidetaka; Yamada, Koji; Ishikawa, Yasuhiko; Wada, Kazumi; Itabashi, Seiichi

    2010-04-12

    We demonstrate the monolithic integration of germanium (Ge) p-i-n photodetector (PDs) with silicon (Si) variable optical attenuator (VOAs) based on submicrometer Si rib waveguide. A PD is connected to a VOA along the waveguide via a tap coupler. The PDs exhibit low dark current of ~60 nA and large responsivity of ~0.8 A/W at the reverse bias of 1 V at room temperature. These characteristics are uniform over the chip scale. The PDs generate photocurrents precisely with respect to DC optical power attenuated by the VOAs. Two devices work synchronously for modulated optical signals as well. 3-dB cut-off frequency of the VOA is ~100 MHz, while that of the PD is ~1 GHz. The synchronous response speed is limited by the VOA response speed. This is the first demonstration, to the best of our knowledge, of monolithic integration of Ge PDs with high-carrier-injection-based optical modulation devices based on Si. PMID:20588687

  15. Experimental study on the interaction between peat, lignite and germanium-bearing solution at low temperature

    Institute of Scientific and Technical Information of China (English)

    QI; Huawen; HU; Ruizhong

    2005-01-01

    The interaction between peat, lignite and germanium(Ge)-bearing solution with an initial Ge concentration of 5 mg/L was studied at 25-100℃ and at pH 2.96-12.08. The results show that the apparent transfer ratios of peat and lignite for Ge in the solution were positively correlated with temperature in acid environment (initial pH=2.96), and the ratios (up to 86.5%) of lignite were obviously higher than those (up to 58.5%) of peat, but the organic transfer ratios of lignite were lower than those of peat. The activation energy values for interaction between peat, lignite and Ge-bearing solution are 30.96 and 15.67 kJmol-1, respectively. The strong acid (initial pH=2.96) and the strong alkaline (initial pH=12.08) environment contribute to the transfer of Ge in the solution. At 4<pH<10, the influences of pH on the interaction between peat and Ge-bearing solution are not significant, while weak acid environment (initial pH=6.38) conduces to the transfer of Ge into lignite. The interaction between peat, lignite and Ge-bearing solution are mainly attributable for the complexation of Ge with organic substrate. The experimental results from this study provide direct experimental evidence for the hydrothermal sedimentary genesis of abnormal enrichment of Ge in coal.

  16. Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

    Directory of Open Access Journals (Sweden)

    Callum G. Littlejohns

    2016-01-01

    Full Text Available The realisation of high quality silicon-germanium-on-insulator (SGOI is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 μm and 1.55 μm. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect-free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for the state-of-the-art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.

  17. Measurements of thermal characteristics in silicon germanium un-cooled micro-bolometers

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, Mario; Torres, Alfonso; Kosarev, Andrey [National Institute for Astrophysics, Optics and Electronics, P.O. Box 51 and 216, Z.P. 7200 Puebla (Mexico); Ambrosio, Roberto; Mireles, Jose [Universidad Autonoma de Ciudad Juarez, Electrical Department, Av. Del Charro 450 N, Z.P. 32310, C. J., Chihuahua (Mexico); Garcia, Maria [Benemerita Universidad Autonoma de Puebla, Physics Department, Av. San Claudio S/N Z.P. 72570 Puebla (Mexico)

    2010-04-15

    We present a study of the thermal characteristics of an infrared detector (un-cooled micro-bolometer), based on an amorphous silicon germanium film (a-Si{sub x}Ge{sub y}:H), deposited by plasma at low temperature ({proportional_to} 300 C) and compatible with the standard CMOS technology. These films have been studied due to their high performance characteristics as high activation energy (E{sub a}{approx} 0.37 eV), high temperature coefficient of resistance (TCR{approx} -0.047 K{sup -1}) and moderate room temperature conductivity ({sigma}{sub RT}{approx} 2x10{sup -5}{omega} cm), which provides a moderate pixel resistance (R{sub cell}{approx}3.5x10{sup 8}{omega}). We have used two simple methods to calculate the thermal characteristics of the micro-bolometer. The thermal conductance (G{sub th}) has been obtained from the electrical I(U) characteristics in the range where self heating due to bias is not presented. The temperature dependence of the electrical resistance and as well the temperature dependence of the thermal resistance have been obtained by measuring the I(U) characteristics in the device at different temperature values. Finally the results of both methods have been compared. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Improved WIMP-search reach of the CDMS II germanium data

    CERN Document Server

    Agnese, R; Asai, M; Balakishiyeva, D; Barker, D; Thakur, R Basu; Bauer, D A; Billard, J; Borgland, A; Bowles, M A; Brandt, D; Brink, P L; Bunker, R; Cabrera, B; Caldwell, D O; Calkins, R; Cerdeño, D G; Chagani, H; Chen, Y; Cooley, J; Cornell, B; Crewdson, C H; Cushman, P; Daal, M; Di Stefano, P C F; Doughty, T; Esteban, L; Fallows, S; Figueroa-Feliciano, E; Godfrey, G L; Golwala, S R; Hall, J; Harris, H R; Hertel, S A; Hofer, T; Holmgren, D; Hsu, L; Huber, M E; Jardin, D; Jastram, A; Kamaev, O; Kara, B; Kelsey, M H; Kennedy, A; Kiveni, M; Koch, K; Leder, A; Loer, B; Asamar, E Lopez; Lukens, P; Mahapatra, R; Mandic, V; McCarthy, K A; Mirabolfathi, N; Moffatt, R A; Oser, S M; Page, K; Page, W A; Partridge, R; Pepin, M; Phipps, A; Prasad, K; Pyle, M; Qiu, H; Rau, W; Redl, P; Reisetter, A; Ricci, Y; Rogers, H E; Saab, T; Sadoulet, B; Sander, J; Schneck, K; Schnee, R W; Scorza, S; Serfass, B; Shank, B; Speller, D; Toback, D; Upadhyayula, S; Villano, A N; Welliver, B; Wilson, J S; Wright, D H; Yang, X; Yellin, S; Yen, J J; Young, B A; Zhang, J

    2015-01-01

    CDMS II data from the 5-tower runs at the Soudan Underground Laboratory were reprocessed with an improved charge-pulse fitting algorithm. Two new analysis techniques to reject surface-event backgrounds were applied to the 612 kg days germanium-detector WIMP-search exposure. An extended analysis was also completed by decreasing the 10 keV analysis threshold to $\\sim$5 keV, to increase sensitivity near a WIMP mass of 8 GeV/$c^2$. After unblinding, there were zero candidate events above a deposited energy of 10 keV and 6 events in the lower-threshold analysis. This yielded minimum WIMP-nucleon spin-independent scattering cross-section limits of $1.8 \\times 10^{-44}$ and $1.18 \\times 10 ^{-41}$ cm$^2$ at 90\\% confidence for 60 and 8.6 GeV/$c^2$ WIMPs, respectively. This improves the previous CDMS II result by a factor of 2.4 (2.7) for 60 (8.6) GeV/$c^2$ WIMPs.

  19. State of the art in high purity germanium systems for homeland security applications

    International Nuclear Information System (INIS)

    The IAEA initiated the Coordinated Research Project Improvement of Technical Measures to Detect and Respond to Illicit Trafficking of Nuclear and other Radioactive Materials in April 2002. The resultant reference manual was published in March 2006. In response to the needs expressed by the IAEA, ORTEC developed the Detective line of high purity germanium (HPGe) radioisotope identifiers (RIIDs). These are now well known and widely used. Several hundred are deployed worldwide in interdiction. The technology used in the Detective has been further developed to address two additional threat interdiction requirements. In the first, a smaller, lighter weight Detective-like device was developed by ORTEC and adapted to meet the needs of the US Human Portable Radiation Detection Systems (HPRDS) programme. The commercial version of this new instrument will be available in January 2008. The development programme and the new product are described. The second advancement is the broadening of the scope of the technology to address new applications for spectroscopic portal monitors as well as wide area search systems. ORTEC has developed modular hardware and software for use in a variety of portal and other configurations. In addition, a software model has been developed to predict portal performance in a variety of detectors and detector placement in these configurations. The hardware and software are described, and performance model data presented and compared to measurements in a pedestrian portal. (author)

  20. Average Energy Expended Per Electron-Hole Pair in Germanium Detector for Dark Matter Searches

    Science.gov (United States)

    Wei, Wenzhao; Wang, Lu; Mei, Dongming; Cubed Collaboration

    2016-03-01

    The value of ɛ, the average energy expended per electron-hole pair, plays a critical role in determining the energy threshold of a bolometer detector with germanium in dark matter searches. We propose an independent method to estimate the value of ɛ down to milli-Kelvin range, which is the operating temperature for a SuperCDMS-like detector. A theoretical model and experimental analysis algorithm are developed in this work to estimate the value of ɛ based on the relationship between ɛ, detector energy resolution (Fano factor) and the primary phonon energy. We also investigated the energy threshold for a SuperCDMS-like detector with the value of ɛ calculated from our model. In this work, we present our theoretical calculation and show how to use experimental data to evaluate the value of ɛ. Subsequently, we report the temperature dependence of ɛ and its value at 50 milli-Kelvin. This work is supported by NSF in part by the NSF OIA 1434142, DOE Grant DE-FG02-10ER46709, and the State of South Dakota.