International Science & Technology Center (ISTC)

The Development of Basic Plasma-Chemical Technology for Manufacture of Low Cost Crystal Silicon for Solar Power Plants.

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We have examined in detail the electrochemistry of both n- and p-type single crystal (100) silicon in the porous silicon formation regime using a rotating Si disk apparatus with a Ag/AgCl reference electrode. Our findings impact the use and optimization of buried n- or p-type layer anodization for silicon-on-insulator (SOI) wafer synthesis. Results are briefly discussed. 3 refs.

Science.gov (United States)

An economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material, is disclosed. By adding copper to approximately the same concentration level of the titanium during the melting process, the conversion efficiency will be restored to about 99.3% of what it would have been if the single crystal silicon had been grown free of titanium impurities.

International Nuclear Information System (INIS)

Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the <100> crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron ...

Science.gov (United States)

Molten zone recrystallized as well as sheet grown polycrystalline silicon has shown a minimum in the temperature dependence of the Hall mobility. In order to explain this experimental finding a new model is proposed, which is based on negatively charged grain boundaries for the p-type silicon material under study. This results in a potential well at the grain boundaries instead of the more generally observed potential barrier. A key feature in the model is that the space charge density at the grain boundary depends on the Fermi level position and therefore on temperature. In addition, the change in the measured Hall mobility before and after hydrogen passivation of the grain boundaries is discussed.

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The subscale Varestraint test has been used to determine the relative hot cracking susceptibility of the fusion zone in four commercial heats of alloy 800. Although all four heats were susceptible to cracking, one heat exhibited a significant increase in cracking relative to the other three. Optical metallography revealed that nearly all the cracking was localized along fusion zone grain boundaries. Microprobe analysis of the grain boundaries detected high concentrations of titanium, silicon, and niobium resulting from partitioning during solidification. The fusion zone hot cracking mechanism in alloy 800 involves the complex interaction of titanium, silicon, niobium, and carbon along the solidification boundaries. SEM and Auger analyses of the hot crack fracture surfaces revealed the presence of (Ti, Nb)-rich carbides, suggesting that these particles precipitate from the liquid ...

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The carbon content of silicon single crystals and polycrystals has been measured by charged particle activation analysis (CPAA) and infrared absorption. The authors obtained a linear relationship between the absorption coefficient at 605 cm/sup -1/ and the carbon content obtained by CPAA. They obtained a conversion factor of (1.00 +- 0.03) 10/sup 17//cm/sup 2/ for a 100% substitutional carbon.

International Nuclear Information System (INIS)

Low pressure silane plasmas are known for their ability to synthesize silicon nanoparticles via gas phase nucleation. While in the past this particle formation has often been considered from the viewpoint of a contamination problem in semiconductor processing, we here describe a silane low pressure plasma that enables the synthesis of highly oriented, cubic-shaped silicon nanocrystals with a rather monodisperse size distribution. These silicon nanocubes have successfully been used in the manufacture of single nanoparticle vertical transistors. We discuss the advantages of this new paradigm of building nanoelectronic devices. The plasma synthesis process is characterized in more detail than in prior work. The particle nucleation, growth and shape evolution are studied. Results indicate that the process provides two spatially distinct zones: a diffuse plasma for particle growth and a constricted plasma ...

International Nuclear Information System (INIS)

Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 #mu#m, current density: 50 mA/cm"2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 #mu#A/cm"2). High electrical activation of the FIB implanted layers is obtained by annealing below 800"0C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3 - 4 x 10"1"5 ions/cm"2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10"-"2 cm/s. (author).

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Polycrystalline silicon films have been grown from Si{sub 2}H{sub 6} by low-pressure chemical vapour deposition at 800 K and in situ laser annealing (LA) on amorphous silicon seed layers deposited on a metallic Ti/Pd/Ag multilayer. The crystalline volume fraction in the seed layer was controlled by thermal annealing. According to the metal-induced crystallization effect, the presence of the metal induces a lower-temperature crystallization of silicon in the seed layers. X-ray diffraction and scanning electron microscopy data show that the formation of palladium silicides in the seed layer drives the growth of wire-like columns which are found to change morphology depending on the seed layer microstructure and LA parameters. It is suggested that superficial palladium was found to affect also the growth rate by enhancing the Si{sub 2}H{sub 6} dissociation.

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Processing techniques utilizing low temperature depositions and pulsed lasers allow the fabrication of polysilicon thin film transistors (TFT`s) on plastic substrates. By limiting the silicon, SiO2, and aluminum deposition temperatures to 100(degrees)C, and by using pulsed laser crystallization and doping of the silicon, we have demonstrated functioning polysilicon TFT`s fabricated on polyester substrates with channel mobilities of up to 7.5 cm2/V-sec and Ion/Ioff current ratios of up to 1x10(to the 6th power).

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In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

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Results are presented of molecular dynamics (MD) studies of 1-10 keV displacement cascades in silicon. At these energies, the simulations couple directly to experimental observations of low energy implantation in silicon for shallow junction formation. The simulations are performed with the Stillinger-Weber potential for silicon in computational cells with up to 3.5x10{sup 5} atoms. The author employs periodic boundary conditions in the [100] and [010] directions and a free surface on the top (001) plane. The author discusses the results in terms of the structural evolution and the dynamics of the cascade zones. For sufficiently high energy recoils (>2 KeV), the cascades produce locally molten zones that result in the formation of amorphous silicon pockets upon recrystallization. Frenkel pairs are also produced during the cascade, although their number is ...

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The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during ...

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In this paper, we report kinetic Monte Carlo study on the diffusion behavior of boron in silicon crystal, more particularly on the transient enhanced diffusion (TED) of boron in silicon during implantation and annealing. Firstly, the accuracy of our KMC code was verified by investigating the time evolutionary behavior of interstitial (I) and vacancy (V) when a silicon substrate is implanted with silicon dose with an energy of 10 keV and with a dose of 1 X 10{sup 14} ions/cm{sup 2}. To investigate the influence of native defects (I, V) on boron diffusion, a single and multi boron markers grown by MBE were employed. The simulation results revealed that the precursor of boron cluster (BI{sub 2}) is dominant at the initial stage of annealing, which explains the boron TED phenomenon in terms of the concentration of boron complexes and I, V clusters, respectively. The formation of ...

International Nuclear Information System (INIS)

The nine title compounds were prepared from the elements by arc-melting and subsequent heat treatment in resistance and high-frequency furnaces. The crystal structure of these isotypic compounds was determined for YPdSi from single-crystal X-ray diffractometer data: Pmmn, a = 430.8(1) pm, b = 1391.2(1) pm, c = 743.1(1) pm, Z = 8, R = 0.024 for 417 structure factors and 40 variable parameters. The crystal structures of the isotypic compounds GdPdSi and ErPdSi were also refined from single-crystal data. The structure is of a new type. It consists of condensed, six-membered rings of alternating palladium and silicon atoms with Pd-Si bond distances varying between 249.6 and 258.8 pm. These two-dimensionally infinite nets are connected to each other via weak Pd-Si and Si-Si bonds with bond distances of 276.3 and 259.5 pm. The rare earth atoms are situated above and below the six-membered ...

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Substitution of various rare earths R within the class of R2PdSi3 single crystals with hexagonal AlB2-type crystallographic structure reveals the systematic dependence of anisotropic magnetic properties governed by the interplay of crystal-electric field effects and magnetic two-ion interactions. Here we compare the floating zone (FZ) crystal growth with radiation heating of compounds with R = Tb, Tm, Pr, and Gd. The congruent melting behavior enabled moderate growth velocities of 3 to 5 mmh-1. The preferred growth directions are close to the basal plane of the hexagonal unit cell. The composition of the crystals, except of Tb2PdSi3, is slightly Pd-depleted with respect to the nominal composition 16.7 at.% Pd. Thin precipitates of RSi secondary phases were detected in the crystal matrix. Their phase fraction can be diminished by growth from Pd-rich melt ...

International Nuclear Information System (INIS)

Pre-amorphization of ultrashallow implanted boron in Silicon-on-insulator is optimized to produce an abrupt box-like doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface, to minimize interstitials whilst leaving a single-crystal seed to support solid-phase epitaxy. Based on a simple physical model of our results, we estimate that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink with a recombination length of the order of 10nm or less under our experimental conditions. (author)

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During the recrystallization by solid-phase-epitaxial (SPE) growth of supersaturated silicon alloys, a high concentration of interstitials is trapped. These are released by subsequent heating causing a transient (greatly enhanced) diffusion of the substitutional dopant by an interstitialcy mechanism. The enhancement may be as much as five orders of magnitude over tracer values, and shows an activation energy of only 1.8 +- 0.2 eV. Following the transient, the interstitials condense into loops, allowing an independent estimate to be made of their concentration. From these observations, we propose that during ion implantation, a fraction of the implanted dopants can acquire their natural valency, and retain it as the crystallization interface passes. For group V dopants this creates the trapped interstitials, giving transient enhanced diffusion when they are released by subsequent annealing.

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This thesis discusses an advanced dynamical two-dimensional cylinder symmetric model for the high temperature part of the carbothermic silicon metal process, and its computer encoding. The situation close to that which is believed to exist around one of three electrodes in full-scale industrial furnaces is modelled. This area comprises a gas filled cavity surrounding the lower tip of the electrode, the metal pool underneath and the lower parts of the materials above. The most important phenomena included are: Heterogeneous chemical reactions taking place in the high-temperature zone (above 1860 {sup o}C), Evaporation and condensation of silicon, Transport of materials by dripping, Turbulent or laminar fluid flow, DC electric arcs, Heat transport by convection, conduction and radiation. The results from the calculations, such as production rates, gas- and temperature distributions, furnace- and particle geometries, fluid ...

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There is considerable interest in the use of silicon devices as qubits for quantum computing. The existence of nuclear spin in a silicon isotope and the complex band structure of silicon are unfavourable for this application of silicon devices. (viewpoint)

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Silicon on insulator (SOI) structures are promising candidates for the fabrication of VLSI circuits with very high packing densities. The preparation of such structures can now be achieved by high dose implantation of reactive ion species such as oxygen to produce buried layers of SiO/sub 2/ in silicon. In this paper we report experiments to depth profile these layered structures by SIMS. SOI samples have been prepared by implanting (100) silicon wafers with 400 keV molecular oxygen ions at a dose of 1.8x10/sup 18/ O/sup +/ cm/sup -2/. During the implantation the wafers were maintained at temperatures between 325 and 600/sup 0/C, using beam heating, which achieved in situ-annealing and ensured that the top silicon layer remained single crystal. Analysis was carried out on an Atomika DIDA-II spectrometer using 10 keV Ar/sup +/ ions with a low current density of less than 1 mA cm/sup ...

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A 4{pi} detection system sensitive to light charged particles is being developed at the Laboratori Nazionali di Legnaro (LNL) for the study of reaction mechanisms at energies up to 20 AMeV. The array consists of 262 {Delta}E-E telescopes covering 90% of 4{pi}. Each telescope is made of a 300 {mu}m passivated silicon detector and a 15 mm (or 5 mm) CsI(Tl) crystal read by a photodiode. The system will be operational in the Spring of 1997 and the first experiments will run in the second half of 1997.

International Nuclear Information System (INIS)

This paper describes Z-contrast scanning transmission electron microscopy used to study the connection between dopant precipitation and phase transformation in high dose In"+ and Sb"+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 10"7 over tracer crystalline values. With Sb"+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

International Nuclear Information System (INIS)

In this letter a method to estimate the visco-elastic response of monolithic ceramics to cyclic loading conditions at high temperatures is proposed. A relation is observed between the visco-elastic energy dissipation measured for two silicon nitride materials, and the structural characteristics of their respective intergranular phases. Some consequences for the fatigue resistance of the tested materials, and of non-transforming monolithic ceramics in general, are discussed. Two batches (G for glassy and C for crystalline) of SiAlON have been studied. The G-batch is obtained by pressureless sintering of silicon nitride powder with Y_2O_3 (6 wt%) and 6AlN-SiO_2 (5 wt%) as sintering additives. The main phase after sintering is #beta#-sialon. Upon cooling from the sintering temperature the amorphous intergranular residues of the sintering additives and of SiO_2, which is unavoidably present as a thin layer on the silicon ...

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Transient enhanced diffusion of phosphorus in silicon has been investigated for implants below and above the threshold for a complete amorphization. Rapid thermal processes (electron beam) and conventional furnaces have been used for the annealing. In the case of implants below amorphization, a strong enhanced diffusion, proportional to the amount of damage produced, has been observed. The extent of the phenomenon is practically independent of the damage depth position. In contrast to this, the formation of extended defects at the original amorphous-crystalline interface makes the diffusivity strongly dependent on depth in the case of post-amorphized samples. No enhanced diffusion effect is observed if the dopant is confined in the amorphous layer, while a remarkable increase in the diffusivity is detected for the dopant located in the crystalline region beyond the amorphous-crystalline interface. Damage distribution after implantation and its evolution during ...

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A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model ...

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Among the most promising technological alternatives for the development of photovoltaic modules and cells of a low cost, good energetic conversion and feasibility for mass production, polycrystalline silicon thin film solar cells deposited directly on a transparent substrate are currently being considered the best. We have developed in our laboratory a PECVD reactor capable of producing the deposition of amorphous hydrogenated silicon at rates of above 2 nm/seg, allowing a significant production per line on the plant. Discharge gas is silane, to which diborane or phosphine is added so as to form the cell. Basically, work is done on a structure of cell type TCO/n+/p-/p+/M, which has 2 {mu}m of total thickness. Schott AF-37 glass is used as a substrate, for their ability to withstand temperatures of up to 800 C. The amorphous cell is subsequently annealed at gradual temperatures of 100 C to achieve dehydrogenation up to 650-700 C for 12 h until ...

International Nuclear Information System (INIS)

The crystal structure of the compound Sm_4Pd_4Si_3 was determined by the single-crystal method (KM-4 automatic diffractometer, Mo K#alpha# radiation). Sm_4Pd_4Si_3 has the monoclinic Nd_4Rh_4Ge_3 type structure: space group C2/c, mC44 (No. 15), a=20.693(6), b=5.584(1), c=7.699(2) A, #beta#=109.48(3) , V=838 A"3, Z=4, #mu#=36.23 mm"-"1, R_F=0.0537, R_W=0.0435 for 1652 unique reflections. The coordination numbers of samarium atoms are 17 and 18. For palladium and silicon atoms icosahedra and trigonal prisms with additional atoms are typical as coordination polyhedra. The structure of Sm_4Pd_4Si_3 is composed of fragments of the YPd_2Si and Y_3Rh_2Si_2 structure in a ratio 1:1. (orig.).

Science.gov (United States)

Photorefractives, in general, are among the most promising materials solutions to real time optical correlation. Applications include military target recognition and civilian robotic vision. Crystals of sillenite structure photorefractives, Bi12XO20, where X equals Si, Ge, or Ti, have been grown by melt techniques and in the case of bismuth silicon oxide (BSO) and bismuth titanium oxide (BTO) by the hydrothermal method of high-temperature/high-pressure solution growth. The two growth methods are discussed and crystals grown by the two methods are compared in this paper. Optical absorption and TSC studies show that hydrothermal BSO is essentially free of the native antisite Bi defect which usually acts as a donor. These studies also show that the trap density is greatly reduced in hydrothermal material. Preliminary experiments show that hydrothermal BTO crystals have improved properties over melt grown ...

International Nuclear Information System (INIS)

Ternary R_2TSi_3 intermetallic compounds (R=Rare Earth, T=Transition Metal) with hexagonal AlB_2-type crystallographic structure are known because of their interesting physical properties. Pr_2PdSi_3 single crystals were grown by a vertical floating zone method. The compound exhibits congruent melting behavior at a liquidus temperature of about 1770 C. Single crystalline samples show a huge anisotropy at low temperatures due to the crystal electric field effect and order antiferromagnetically below the Neel temperature T_N=2.17 K. This value approximately obeys the linear de Gennes scaling for this class of compounds. The [001] orientation was identified as the magnetic easy axis at room temperature. At lower temperature (#approx#20 K) magnetic easy and hard axes interchange with each other. Two additional magnetic phase transitions were observed at temperatures below 1 K.

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The major goal of this contract is to define fine grid lines using laser-assisted metallization and to demonstrate the fabrication of high-efficiency cells using this process. During this period a solar cell run was completed using low-resistivity float-zone silicon. Grid lines were written by spinning silver neodecanoate solution after the Ti-Pd evaporation. This run produced cell efficiencies as high as 11.2% prior to antireflection coating and 16.6% after the AR coating. Open-circuit voltage was approx.604 mV and short-circuit current density was approx.35 mA/cmS.

International Nuclear Information System (INIS)

The FLAPW (full-potential linearized-augmented plane-wave) method is one of the most accurate first-principles methods for determining electronic and magnetic properties of crystals and surfaces. Until the present work, the FLAPW method has been limited to systems of less than about one hundred atoms due to a lack of an efficient parallel implementation to exploit the power and memory of parallel computers. In this work we present an efficient parallelization of the method by division among the processors of the plane-wave components for each state. The code is also optimized for RISC (reduced instruction set computer) architectures, such as those found on most parallel computers, making full use of BLAS (basic linear algebra subprograms) wherever possible. Scaling results are presented for systems of up to 686 silicon atoms and 343 palladium atoms per unit cell, running on up to 512 processors on a CRAY T3E parallel computer.

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Midway Labs currently produces a 335x concentrator module that has reached as high as 19{percent} active area efficiency in production. The current production module uses the single crystal silicon back contact SunPower cell. The National Renewable Energy Lab has developed a multi junction cell using GalnP/GaAs technologies. The high efficiency ({gt}30{percent}) and high cell voltage offer an opportunity for Midway Labs to develop a tracking concentrator module that will provide 24 volts in the 140 to 160 watt range. This voltage and wattage range is applicable to a range of small scale water pumping applications that make up the bulk of water pumping solar panel sales. {copyright} {ital 1997 American Institute of Physics.}

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This report summarizes the progress of the Basic Sciences Branch of the National Renewable Energy Laboratory (NREL) from October 1, 1989, through September 30, 1990. Six technical sections of the report cover these main areas of NREL's in-house research: Semiconductor Crystal Growth, Amorphous Silicon Research, Polycrystalline Thin Films, III-V High-Efficiency Photovoltaic Cells, Solid-State Theory, and Solid-State Spectroscopy. Each section of the report was written by the group leader principally in charge of the work. The task in each case was to explain the purpose and major accomplishments of the work in the context of the US Department of Energy's National Photovoltaic Research Program plans.

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The elemental and mineralogical variation in a self-burning coal seam from Coalspur, Alberta, is determined using instrumental neutron activation analysis (INAA) and x-ray diffraction (XRD). The elemental variation in the coal seam is related to temperatures in the various alteration zones, i.e., oxidation, combustion, or carbonization and nature of elements. Mobilization of elements is greatest for As, Br, Cl, Mo, N, S, and Sb. Some of these elements are released to the atmosphere, as evident by the presence of orthorombic sulfur crystals on the surface or in vents at the top of the burning seam or saturation of oxidation char by volatile matter (tar). Whewellite (CaC{sub 2}O{sub 4}, H{sub 2}O) is the only Ca-bearing mineral found in the cooler area of the coal seam. Decomposition of this mineral, coupled with the presence of SO{sub 2} formed by reaction of organic sulfur with O{sub 2} in combustion, resulted in formation of a relatively high ...

Energy Technology Data Exchange (ETDEWEB)

We discuss the transient-enhanced diffusion of Sb, As, P, In, Ga, and B in ion-implanted Si, where the near-surface region has been amorphized by the dopant or by a self-implantation process. With Sb, a large transient diffusion enhancement is observed proportional to dopant concentration. For Sb, As, P, and In, the enhancement follows the relative interstitialcy diffusion coefficient. We believe this behavior is caused by stable implantation-induced point defects present in the amorphous surface layer, which decay during thermal processing to release high concentrations of self-interstitials. This process occurs in competition with the solid phase epitaxial (SPE) growth process, and for high dopant concentrations can occur in the amorphous phase ahead of the crystallization front. We believe this may be the origin of the dopant redistribution which can occur during SPE growth, which sets the upper limit to the dopant concentration which can be incorporated in the ...

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Abstract: We report for the selective-area chemical synthesis of semiconductor single-crystal organic nanowires of silver-tetracyanoquinodimethane (Ag-TCNQ). Straight and smooth Ag-TCNQ nanowires can be produced and patterned on micrometer and nanometer scale on silicon substrates covered with a thin layer of Ag film through the reaction of TCNQ and Ag in a simple gas-solid chemical reaction process. Ag-TCNQ nanowires are characterized by UV-vis, IR and Raman spectroscopy, respectively. The Ag-TCNQ nanowires grows preferentially along the [100] direction of strong - stacking of Ag-TCNQ molecules. Nanodevices based on these nanowires are fabricated using focus ion beam (FIB) technique. Electrical properties are characterized and I-V hysteresis is observed, which shows memory effect with electrical switching of three orders on-off ratio. These nanowires could be potential for use in optical storage, ultrahigh-density nanoscale memory and logic ...

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Aluminum-containing intergranular phases, forming intergranular films and secondary phase particles at triple-junctions in SiC hot-pressed with aluminum, boron, and carbon additions, were studied by transmission electron microscopy. Statistical high-resolution electron microscopy study of intergranular films indicated that a large fraction of the vitreous intergranular films in the s-hot-pressed SiC crystallized during postannealing in argon above 1000 C. However, brief heating to 1900 C indeed re-melted 25 percent of the crystallized intergranular films. The structural transitions were reflected in the statistical width distributions of the amorphous grain boundary layers. At triple-junctions, Al2O3, Al2OC-SiC solid solution, and mullite phases were newly identified. These phases,together with others reported before are represented in a quaternary phase diagram for 1900 C. It is proposed that a SiC-Al2OC liquid domain is to be included in this ...

International Nuclear Information System (INIS)

Nanoscale islands of Cu_2O have been synthesized on single-crystal SrTiO_3 (100) substrates using oxygen plasma-assisted molecular-beam epitaxy (MBE). Island growth location has been controlled by using an ex situ Ga"+ focused ion beam (FIB) to modify the growth surface in discrete locations prior to island synthesis. The FIB modifications have generated surface topography with lateral dimensions of 150-200 nm. Ex situ atomic force microscopy study after island growth reveals that certain FIB substrate modification and MBE growth condition combinations lead to directed self-assembly of metal oxide islands at the edges of the FIB modified zones.

International Nuclear Information System (INIS)

Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a Flexus 2900 thin film ...

International Nuclear Information System (INIS)

Textured silicon nitride (Si_3N_4) has been intensively studied over the past 15 years because of its use for achieving its superthermal and mechanical properties. In this review we present the fundamental aspects of the processing and anisotropic properties of textured Si_3N_4, with emphasis on the anisotropic and abnormal grain growth of #beta#-Si_3N_4, texture structure and texture analysis, processing methods and anisotropic properties. On the basis of the texturing mechanisms, the processing methods described in this article have been classified into two types: hot-working (HW) and templated grain growth (TGG). The HW method includes the hot-pressing, hot-forging and sinter-forging techniques, and the TGG method includes the cold-pressing, extrusion, tape-casting and strong magnetic field alignment techniques for #beta#-Si_3N_4 seed crystals. Each processing technique is thoroughly discussed in terms of theoretical models and experimental ...

Science.gov (United States)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

Energy Technology Data Exchange (ETDEWEB)

A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs 'dopant atom-point defect', in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of 'uphill' impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration phosphorus diffusion (due to the second mechanism), can be explained. Numerical computations of high ...

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A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10{sup 9} and 10{sup 15} cm{sup -2} and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation ({<=}10{sup 10} cm{sup -2}) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 C. However, at higher doses (10{sup 14}-10{sup 15} Al/cm{sup 2}) the rate of defect recombination (annihilation) increases substantially during hot implants ({>=}200 C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000 C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is ...

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In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect selective etching (DSE) in molten NaOH-KOH at 400 C for 2 minutes. Etching produced pits of three different sizes: 1.77 m, 2.35 m , and 2.86 m. The etch pits were either aligned together forming a sub-grain boundary or randomly distributed. The smaller etch pits were either isolated or associated with larger etch pits. After preparing crosssections of the pits by the focused ion beam (FIB) technique, transmission electron microscopy (TEM) was performed to determine which dislocation type (edge, mixed or screw) produced a specific etch pit sizes. Preliminary TEM bright field and dark field study using different zone axes and diffraction vectors indicates an edge dislocation with a Burgers vector 1/3[1120] is associated with the ...

International Nuclear Information System (INIS)

Radioactive "3"1Si(Tsub(1/2) = 2.62 h) and Rutherford backscattering were used to study Ni_2Si, Pd_2Si and Pt_2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si(100)/Pd_2Si/Si (amorphous) system. (Auth.).

International Nuclear Information System (INIS)

Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 deg. C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of #tau#_8-Ce_3Pd_4Si_4 (U_3Ni_4Si_4-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), #tau#_1_6-Ce_2Pd_1_4Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for #tau#_1_8-CePd_1_-_xSi_x (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of #tau#_5-Ce_3PdSi_3 (Ba_3Al_2Ge_2-type, Immm; a=0.41207(1), b=0.43026(1), c=1.84069(4) nm) and ...

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Energy Technology Data Exchange (ETDEWEB)

A specific radiochemical procedure for indium determination in semiconductor-grade silicon, using an inorganic ion exchanger (cerium oxalate) is proposed.

CERN Document Server

Design and R&D for the forward calorimeter and silicon tracker of the $\\tau$cF detector

CERN Document Server

A highly integrated trigger and readout system for a silicon micro-strip detector installed at the CERN Omega spectrometer

Science.gov (United States)

Lysozyme crystal growth rates over 5 orders of magnitude in range can be described using a

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The report provides and overview of calculation models for the simulation of airflows and deals comprehensively with field and multi-zone models as well as the coupling of individual zone and multi-zone models. Examples of calculations are given. figs., tabs., refs.

International Nuclear Information System (INIS)

The pitting corrosion resistance of three different types of stainless steel implanted with silicon is investigated using the potentiokinetic polarization technique. The specimens are tested in 3% NaCl and 0.1 N HCl solutions. Silicon ion implantation inhibits pitting corrosion of the steels in both aqueous media. The corrosion resistance depends on the silicon dose. Post implantation annealing only slightly alters the localized corrosion. (author).

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... defects doped materials germanium infrared radiation monocrystals neutron

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We report on the fouling of Focused Ion Beam (FIB)-fabricated silicon oxide nanopores after exposure to tap water for two weeks. Pore clogging was monitored by Scanning Electron Microscopy (SEM) on both bare silicon oxide and chemically functionalized nanopores. While fouling occurred on hydrophilic silicon oxide pore walls, the hydrophobic nature of alkane chains prevented clogging on the chemically functionalized pore walls. These results have implications for nanopore sensing platform design.

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No abstract prepared.

International Nuclear Information System (INIS)

Complete text of publication follows. Baikal is an ancient unique lake. The sweet water of Baikal is crystal clean; it concentrates oxygen and contains scarce silicon. This feature is provoked very particular interest for scientists and poses some awkward questions concerning the preservation of Baikal's ecosystem. A profound investigation of fish otholiths, animal teeth, sponges, valves of mollusks and diatom algae provides chronological information, possibility to reconstruct the events proceeding in the environment based on variations of their chemical composition. Because these study objects are small-sized, and some of them are micron-size, application of the electron-probe microanalysis turns to be quite productive. The goal of this study is to disclose performance capabilities of this method while investigating the Baikal flora and fauna. Investigations were performed by devices JCXA-733 and JXA-8200 using the electron microscope and ...

International Nuclear Information System (INIS)

Neutron transmutation doping(NTD) for producing ntype silicon semiconductor is based on the conversion of the Si-30 isotope into phosphorus atom by neutron absorption reaction. By using this method, silicon semiconductors with extremely uniform n-type dopant distributions can be produced, and this is the dominant advantage of NTD compared with the conventional chemical doping. HANARO has two vertical holes for NTD, and the commercial NTD service for 5 and 6 inch silicon ingots has been going on at the NTD2 hole. Generally, NTD method is applied to the initially n-type silicon material. But, an initially p-type silicon material can also be used for the production of uniformly doped n-type silicon by using NTD method. Therefore, in this work, we investigated the relationship between the irradiation neutron fluence and the final resistivity of the initially p-type ...

International Nuclear Information System (INIS)

Based on the results obtained for C-N and Si-C-N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C-Si-B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5-75%) in the magnetron target erosion area, the Ar fraction (0-75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to -500 V) and the substrate temperature (180-350 deg. C). The total pressure and the discharge current on the magnetron target were held constant at 0.5 Pa and 1 A, respectively. The energy and flux of ions bombarding the growing films were determined on the basis ...

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This paper discussed the lithological characteristics of tight gas reservoirs, including the diagenetic characteristics, diagenetic environment and diagenetic sequence. The link between porosity, the sedimentary environment, lithology, diagenesis and basin tectonics was examined in order to determine how tight reservoirs were formed. The study focused on the Changbei gas field located in Yishan Slope of the Ordos Basin in China. The main pay zone reservoir is the Upper Paleozoic Lower Permian Shanxi sandstone which lies at a depth of 2700-2950 m. This low porosity, low permeability tight gas reservoir was deposited in a coal bearing acid environment which controlled the diagenesis sequence. The early carbonate cement was not well developed because the original pore water was acidic with non saturated calcium carbonate. However, compaction has significantly reduced the original pore and pore volume. The acidic environment caused large amounts of secondary quartz ...

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No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared.

Energy Technology Data Exchange (ETDEWEB)

Greenhouse-effect induced climate change repercussions will, via the catchment areas of big rivers, eventually arrive in amplified form at the far downstream coastal zones of the world. In the coastal zone these imported problems will add to the locally exerted climate change effects, while the climate change induced sea-level rise will attack the coastal zone from the other side, both by flooding and by saline groundwater intrusion. These multiple problems will hit the coastal zone, which is already under increasing stress. The combined threats require fast and massive support for national Coastal Zone Management capabilities, which could help to limit the damage and to support planning for sustainable development. Recommendations are presented to facilitate implementation of Coastal Zone Management units in all coastal countries by the year 2000.

CERN Document Server

This handbook is a unique compendium of knowledge on all aspects of the physics of liquid crystals. In over 500 pages it provides detailed information on the physical properties of liquid crystals as well as the recent theories and results on phase transitions, defects and textures of different types of liquid crystals. An in-depth understanding of the physical fundamentals is a prerequisite for everyone working in the field of liquid crystal research. With this book the experts as well as graduate students entering the field get all the information they need.

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The paper reports on the results of a study of the synthesis conditions effects on magnetic and transport properties of nanosized layers of high-T{sub c} diluted magnetic semiconductors (DMS), such as Ge:Mn, Si:Mn and Si:Fe, fabricated by laser-plasma deposition over a wide range of the growth temperature, T{sub g}=(20-550) deg. C on single-crystal GaAs or Al{sub 2}O{sub 3} substrates. Ferromagnetism of the layers was detected by measurement data of the magneto-optical Kerr effect, anomalous Hall effect, negative magnetoresistance and ferromagnetic resonance (FMR) at 5-500 K. The optimum growth temperature, T{sub g}, for Si:Mn/GaAs layers with T{sub c}{approx}400 K is shown to be about 400 deg. C. The Si:Mn/Al{sub 2}O{sub 3} layers with 35% of Mn have the metal-type of conductivity with manifestation of magnetization up to room temperature. Different types of uniformly doped structures and digital alloys have been investigated. In contrast to GaSb:Mn films, ...

International Nuclear Information System (INIS)

Oxyfluoride aluminosilicate glasses in the composition of 50SiO2-20Al2O3-20LiF-10GdF3-0.5TmF3-xYbF3 (x = 0, 1.0, 2.5, 5, 7.5, 10, 15, 20, 25 and 30 mol%) have been prepared to study their thermal and optical properties. From the differential thermal analysis measurements, glass transition temperatures and onset crystallization temperatures have been evaluated and from them glass stability factors were calculated. Glass stabilities decreased gradually with fluoride content increment in all the studied glasses. The photoluminescence and decay measurements have also been carried out for all these glasses. In these glasses, an efficient near infrared quantum cutting with optimal quantum efficiency approaching 187% has been demonstrated, by exploring the co-operative downconversion mechanism from Tm3+ to Yb3+, with 467 nm (Tm3+ : 3H6 ? 1G4) excitation wavelength. These glasses are promising materials to achieve high efficiency silicon based solar ...

International Nuclear Information System (INIS)

In this letter, the effect of vacancies generated by preirradiated laser on dopant diffusion and activation in preamorphized silicon substrate has been studied. Laser-induced melting in silicon was used to generate excess vacancies near the maximum melt depth before silicon substrate amorphization and subsequent boron implantation. We demonstrate that by matching the preirradiated laser melt depth with the implant amorphize depth, it can effectively reduce the silicon self-interstitials released from the end-of-range defect band. The results show great suppression in boron transient enhanced diffusion and significant removal of end-of-range defects. This is attributed to the recombination of laser-generated excess vacancies with preamorphizing induced free silicon interstitials at the end-of-range region.

International Nuclear Information System (INIS)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019 n ? cm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

Energy Technology Data Exchange (ETDEWEB)

The Fredericksberg of South Florida may have a great oil potential that has been overlooked as a primary target in past decades. Previous exploration in the area has targeted the Lower Cretaceous oil-producing Sunniland Formation lower in the stratigraphic section. The Fredericksberg Dollar Bay Formation has hydrocarbon shows in many wells occurring in limestone biohermal deposits as well as in an upper dolomitic section. The Dollar Bay Formation is part of the Big Cypress Group of the Comanchean Series of the Lower Cretaceous. The Lower Cretaceous lithology is composed of evaporitic-carbonate cycles consisting of anhydrites, dolomites, and limestones. There are also present some calcareous shales, mudstones, salt, lignitic material, and carbonaceous material, especially in the anhydrite and limestone intervals. The limestones are usually micritic, chalky, calcarenitic, sometimes argillaceous, containing skeletal particles of gastropods, pelecypods, ostracods, algae, and forams ...

British Library Electronic Table of Contents (United Kingdom)

Tachycardia Detection, ICD, CRT-D Devices, Appropriate and Inappropriate Shock.-Introduction: We evaluated the frequency of appropriate and inappropriate shocks and survival in patients using dual-zone programming versus single-zone programming. Methods and Results: For the ALTITUDE REDUCES study, patients were followed for 1.6 1.1 years. The 12-month incidence of any shock was lower for dual-versus single-zone programmed detection at rates -170 bpm and between 170-200 bpm (P < 0.001). Appropriate shock rates at 1 year were also lower with dual-zone programming in these rate intervals (single zone 9.1%, 5.4%, P < 0.001, dual zone 6.7%, 4.7%, P < 0.02). There were no detectable differences between single- and dual-zone shock incidence at detection rates - 200 bpm (P = 0.14). Inappropriate s...

UK PubMed Central (United Kingdom)

Purpose:To report crystal formation as a complication of intravitreal ganciclovir injection.Patients and methods:A 73-year-old female patient with...Full Text Available

Science.gov (United States)

Phase relations in the ternary system Ce-Pd-Si have been established for the isothermal section at 800 deg. C based on X-ray powder diffraction and EMPA techniques on about 130 alloys, which were prepared by arc-melting under argon or powder reaction sintering. Eighteen ternary compounds have been observed to participate in the phase equilibria at 800 deg. C. Atom order was determined by direct methods from X-ray single-crystal counter data for the crystal structures of tau{sub 8}-Ce{sub 3}Pd{sub 4}Si{sub 4} (U{sub 3}Ni{sub 4}Si{sub 4}-type, Immm; a=0.41618(1), b=0.42640(1), c=2.45744(7) nm), tau{sub 16}-Ce{sub 2}Pd{sub 14}Si (own structure type, P4/nmm; a=0.88832(2), c=0.69600(2) nm) and also for tau{sub 18}-CePd{sub 1-x}Si{sub x} (x=0.07; FeB-type, Pnma; a=0.74422(5), b=0.45548(3), c=0.58569(4) nm). Rietveld refinements established the atom arrangement in the structures of tau{sub 5}-Ce{sub 3}PdSi{sub 3} (Ba{sub 3}Al{sub 2}Ge{sub 2}-type, ...

International Nuclear Information System (INIS)

Experience with multiwire proportional chambers at high rates at the Argonne Zero Gradient Synchrotron is described. A buildup of silicon on the sense wires was observed where the beam passed through the chamber. Analysis of the chamber gas indicated that the density of silicon was probably less than 10 ppM.

Science.gov (United States)

Beta silicon carbide is an excellent candidate semiconductor material for demanding applications in high power and high temperature electronic devices due to its high breakdown voltage, relatively large band gap, high thermal conductivity and high melting...

Science.gov (United States)

is 10 seconds for P-type silicon material,. TO ,. In ordkr to determine the effects of unbalanced ionization between the two ...

Energy Technology Data Exchange (ETDEWEB)

This paper summarizes the U.S. Department of Energy R&D program in crystalline-silicon photovoltaic technology, which is jointly managed by Sandia National Laboratories and National Renewable Energy Laboratory. This program features a balance of basic an d applied R&D, and of university, industry, and national laboratory R&D. The goal of the crystalline-silicon R&D program is to accelerate the commercial growth of crystalline-silicon photovoltaic technology, and four strategic objectives were identified to address this program goal. Technical progress towards meeting these objectives is reviewed.

Science.gov (United States)

... wherever possible. The primary interface for mechanical modeling is through PATRAN, a ... PATRAN Neutral File. PATRAN ...

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The theory for the general case of solar cells operating inside integrating cavity receivers is established. This is applied to the particular case of different configurations of silicon and GaAs cells. The results of the analysis show that a composite system of silicon and GaAs cells manufactured using relatively simple technology could reach an efficiency of 34%. The optimal configuration is that in which the GaAs cells are placed in the directly illuminated area of the receiver and the silicon cells are placed in the indirectly illuminated area of the receiver. (orig.).

Science.gov (United States)

A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, ...

CERN Document Server

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

International Nuclear Information System (INIS)

Paper estimates the corrosion resistance and studies the character of dissolving of silicon-bearing austenite stainless steels in strongly oxidizing media containing phosphate and fluoride admixtures. Corrosion behaviour of the studied steels is determined to depend essentially on the content of admixture or alloying silicon, as well as, on their phase composition in many respects determined by the thermal treatment condition. Refs. 22, figs. 1, tabs. 2.

International Nuclear Information System (INIS)

The point-defect-impurity pair diffusion model proposed recently by Mulvaney and Richardson is adopted and modified to simulate the coupled diffusion of phosphorus and self-interstitials in phosphorus-implanted silicon. The assumption of implantation-induced, but empirically determined initial interstitial distributions of Gaussian shape allows a simulation of the net effect of transient enhanced diffusion. As a result an improved modeling of phosphorus diffusion in silicon is achieved for a broad range of ion-implantation and annealing conditions. (author).

International Nuclear Information System (INIS)

Silicon/carbon composite anode materials were prepared by pyrolyzing the phenol-formaldehyde resin (PFR) mixed with silicon and graphite powders. Scanning electron microscopic (SEM) observation showed that the morphology stability of the composite electrodes can be retained during cycling. A structure evolution mechanism is proposed to illuminate the enhancement of cycleability of the composite electrode. The composite used as anode material for lithium ion batteries possesses a reversible capacity of over 700 mAh/g.

UK PubMed Central (United Kingdom)

This article aims to open up the biographical black box of three experts working in the boundary zone between science, policy and public debate. A biographical-narrative approach is used to analyse...Full Text Available

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Several low-mass models with an inhomogeneous radiative core and a convective envelope are investigated, the entire core or its upper portion being treated as a zone of neutral stability. Mixing by convective overshoot will then give rise to unstable structure.

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The paper presents a review of the current state of knowledge on the likely impacts of extreme weather and climate events on coastal zones and small islands in the context of climate change. Possible response options, including prevention, preparedness and adaptation, are indicated.

UK PubMed Central (United Kingdom)

The aim of this study was to investigate the effect of erythropoietin (EPO) on histological brain injury, subventricular zone (SVZ) expansion, and sensorimotor function deficits induced by hypoxia-ischemia...Full Text Available

International Nuclear Information System (INIS)

The biological and radiobiological peculiarities of seeds and seedlings of the Rumex confertus and Lupinus polycolor plants, which grown during several generations in plots with different level of radionuclide pollution of the Chernobyl exclusive zone have been investigated.

UK PubMed Central (United Kingdom)

Chronic autoimmune or pathogen-induced immune reactions resulting in lymphoid neogenesis are associated with development of malignant lymphomas, mostly extranodal marginal zone B-cell lymphomas (MZBCLs)....Full Text Available

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International Nuclear Information System (INIS)

... bf3 counters data multi-channel analyzers multivibrators neutron spectrometers

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We present a study of the crystal field in PrNiAl, NdNiAl, ErNiAl and ErCuAl intermetallic compounds based on inelastic neutron spectroscopy. These compounds crystallize in the ZrNiAl-type hexagonal structure with an orthorhombic symmetry on rare-earth sites. The results are compared with the specific-heat data, and the lower parts of the crystal-field energy-level schemes are determined. (orig.)

KoreaScience (Korea)

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The ErNi{sub 1-} {sub x} Cu {sub x} Al compounds crystallize all in the hexagonal ZrNiAl-type structure. The concentration dependence of lattice constants shows a discontinuity between x=0.5 and 0.6. This structural change has no primary impact on the magnetic order in this series, but influences the crystal field. The lower part of the crystal-field energy-level schemes has been estimated from the specific-heat data.

KoreaScience (Korea)

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International Nuclear Information System (INIS)

German 2003 p. 24 Germany Klemz, G. Moenig, K. Sekaric, J. Stahl,

Wastenet

...Benthic Marine Bioregionalisation of Australia's Exclusive Economic Zone The benthic (sea floor) component of the National Marine Bioregionalisation covers the 80% of Australia's ... Exclusive Economic Zone that lies beyond the continental shelf break. It provides a description of patterns of biological distributions and physical habitats on the seafloor....sea floor) component of the National Marine Bioregionalisation covers the 80% of Australia's Exclusive Economic Zone that lies beyond the continental shelf break. It provides a ... Benthic Marine Bioregionalisation of Australia's Exclusive Economic Zone Change text size Skip to content Marine Bioregional Planning resources Search: About us Contact us You ...

International Nuclear Information System (INIS)

In this review, we demonstrate the developmental appearance, structural features, and reorganization of transient cerebral zones and structures in the human fetal brain using a correlative histological and MRI analysis. The analysis of postmortem aldehyde-fixed specimens (age range: 10 postovulatory weeks to term) revealed that, at 10 postovulatory weeks, the cerebral wall already has a trilaminar appearance and consists of: (1) a ventricular zone of high cell-packing density; (2) an intermediate zone; (3) the cortical plate (in a stage of primary consolidation) with high MRI signal intensity. The anlage of the hippocampus is present as a prominent bulging in the thin limbic telencephalon. The early fetal telencephalon impar also contains the first commissural fibers and fornix bundles in the septal area. The ganglionic eminence is clearly visible as an expanded continuation of the proliferative ventricular ...

Energy Technology Data Exchange (ETDEWEB)

Large single crystals of PETN, RDX, and TNT can be grown easily from evaporating ethyl acetate solutions. The crystals all share a similar type of defect that may not be commonly recognized. The defect generates conical faces ideally mosaic crystals, and may account for the polymorphs'' of TNT and detonator grades of PETN. TATB crystals manufactured by the amination of trichlorotrinitrobenzene in dry toluene entrain two forms of ammonium chloride. One of these forms causes worm holes'' in the TATB crystals that may be the reason for its unusually low failure diameters. Strained HMX crystals form mechanical twins that can spontaneously revert back to the untwinned form when the straining force is removed. Large strains or temperatures above 100[degrees]C lock in the mechanical twins.

International Nuclear Information System (INIS)

The energy levels scheme of octahedrally coordinated Ni2+ ion in single crystal, powder nano-single crystal, ceramics and glass-ceramics of MgGa2O4 host matrix, has been calculated in the exchange charge model of crystal field. The parameters of the crystal field acting on the Ni2+ ion are calculated from the crystal structure data, after optimization of the geometry of the system. The energy level schemes have been calculated by diagonalization of the crystal field Hamiltonian of this system. The obtained results were compared with experimental data; a good agreement were demonstrated, which confirm the validity of the model and used method.

Energy Technology Data Exchange (ETDEWEB)

The intermediate silicon layers detector (ISL) was proposed as a part of the upgraded CDF detector at the RUN-II of the Tevatron mean value of pp collider at Fermilab, scheduled to start in year 2000. The ISL is a large-radius (20-30 cm) silicon tracker with a total active area of about 3.5 m. Located in the region between the silicon vertex detector and the central outer tracker, the ISL will allow tracking in the forward region and significantly improve it in the central area. Together with the SVX II the ISL forms a standalone, 3D silicon tracker. The challenge is to build a low-cost device which provides precise 3 D tracking in a approximately equal to 2 m long area with a minimal amount of material for the supporting structure. The conceptual design and the status of the project are reviewed.

British Library Electronic Table of Contents (United Kingdom)

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x1019ncm-1. The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual 32P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neut...

Energy Technology Data Exchange (ETDEWEB)

In the course of designing a catalytic porous membrane reactor for experimental studies, both inside and outside of the non-reaction zones as well as the two ends of the membrane need to be completely sealed to ensure that there is no flow across the membrane in the non-reaction zone. Experiments show that up to 50% of the total flow across the membrane may be contributed by the axial flow along the wall of the non-reaction zones if only one side of the membrane is sealed. Another problem that cannot be solved by sealing is the capillary flow of the catalyst along the tube wall into the non-reaction zones when the catalyst is doped on the membrane. One of the best ways to avoid this axial flow of catalyst would be to use non-porous tubes in the non-reaction zones and join them with the porous membrane tube. In doing so, the cost of the membrane reactor could be reduced simply ...

International Nuclear Information System (INIS)

Microstructure and properties of a Mg AZ31B laser beam weld without filler are studied using electron microscopy, X-ray diffraction and mechanical tests. The microstructure of the weld is characterized by a narrow heat affected zone, columnar grains and precipitate coarsening in the fusion zone. Texture in the fusion zone is significantly different from the texture of the base material. The residual stress distribution observed is similar at the top and the bottom of the weld, maximum tensile residual stress values are observed in the fusion zone. Tensile tests reveal differences in the mechanical behavior of the fusion zone and the parent material, which can be related to the differences of texture and the resulting deformation mechanisms.

International Nuclear Information System (INIS)

The reactor core of TAPP-3 and 4 is divided into 14 power zones for spatial power control. Corresponding to each zone is a light water zonal compartment. The 14 ZCCs are located in two radial planes, each containing 7 ZCCs. For each zone, power measurement is carried out using three cobalt Self Powered Neutron Detectors (SPNDs) at appropriate locations close to the respective ZCC. Since the zone power as obtained by the true average of the healthy zone control detector (ZCD) readings belonging to a particular zone may not correspond to its actual power because these 3 detectors per zone, measure only point fluxes but the zone extends over a large core region. Therefore accurate estimation of zone power calibration factors is required to estimate the zone powers and also to ...

International Nuclear Information System (INIS)

In the heat-affected zones (HAZ) of low alloy steels used for nuclear pressure vessel, microstructural changes, such as grain coarsening, carbide precipitation, and martensite formation, generally occur and cause a deterioration of toughness and an increase in sensitivity to brittle fracture. Metallographic analyses of low alloy steel welds reveal significantly different regions in HAZ microstructures. In 2-pass welds, there were seven characteristic regions in the HAZ determined by the peak temperature, to which the region was exposed during the weld thermal cycle: a coarse-grained region, a fine-grained region, an intercritical region, and subcritical region. The coarse-grained region can be categorized into four zones according to the reheating temperature as follows : an unaltered coarse-grained zone (UCGHAZ), a supercritically reheated coarse grained zone (SCRCGHAZ), an intercritically reheated ...

Energy Technology Data Exchange (ETDEWEB)

We tried to apply a quartz crystal as a sensor by using the resonant frequency and the resistance properties of quartz crystals. Four kinds of fatty acids that have the same head groups were coated on the surfaces of the quartz crystals, and the shift of the resonant frequency and the resistance were observed based on the lengths of the tail groups. Myristic acid (C{sub 14}), palmitic acid (C{sub 16}), stearic acid (C{sub 18}), and arachidic acid (C{sub 20}) were deposited on the surfaces of quartz crystals by using the Langmuir-Blodgett (LB) method. As a result, the resonant frequency change was more sensitive to high molecular-weight fatty acids than to low molecular-weight ones. We also observed the effect of temperature on stearic acid LB films, and the response properties of quartz crystals coated with stearic-acid LB films to organic gases were investigated. As a result, the ...

British Library Electronic Table of Contents (United Kingdom)

Single crystals of ytterbium tartrate trihydrate have been grown by gel method using silica and agar-agar gels as media of growth. The medium of growth influences the morphology of grown crystals, silica gel yielding single and polycrystalline in the form of spherulites whereas agar-agar gel leading to growth of single and twinned crystals. Materials grown as single crystals have been characterized by using optical and scanning electron microscopy (SEM), EDAX, XRD, FT-IR, CHN and thermogravimetric techniques. The stoichiometry of the grown single crystals is suggested to be Yb(C4H4O6) (C4H5O6).3H2O. The FT-IR spectrum shows the presence of singly as well as doubly ionized tartrate ligands. Results of thermal analysis indicate that the material is thermally stable up to a temperature of 200...

International Nuclear Information System (INIS)

Marker experiments for studying the mass transport through a palladium silicide layer on a crystalline substrate during thermal oxidation at 700 to 850 deg C have been reported recently. In this work argon gas embedded in amorphous silicon during sputtering was implemented as the inert marker and the oxidation of PdSi was processed above 900 deg C. At this high-temperature oxidation silicon-rich silicide PdSisub(y), with y exceeding 5, may be obtained. This can be anticipated by considering the Pd-Si phase diagram which shows the liquid phase may appear at an annealing temperature above 892 deg C. As a result, a non-stoichiometric and non-uniform silicide layer may develop at the sample surface. Marker analysis showed that both palladium and silicon dissociated at the Pdsub(x)Si/ SiO_2 interface and moved to the substrate with the silicon being the dominant diffuser. The Rutherford backscattering ...

International Nuclear Information System (INIS)

Boron is implanted in crystalline silicon through oxide layers with different thicknesses. The implantation is carried out at various doses and energies of interest in ultra large scale integration (ULSI) application. Rapid thermal annealings (RTA) are used to obtain shallow junctions and electrical activation of the B atoms. However, transient enhanced diffusion induced by implantation damage can be observed. The boron concentration profiles before and after annealing are obtained with secondary ion mass spectrometry (SIMS). It is found that the diffusion transient in the tail region of the boron profile increases with decreasing oxide thickness. Even more, if the implantation damage concerns mostly the oxide, i.e. when the concentration peak is located in this oxide, the oxygen knocked into the silicon substrate could play this way an important role in restricting the boron diffusion, which is good to obtain very shallow junctions. On the ...

Energy Technology Data Exchange (ETDEWEB)

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon-oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide-silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an ...

Energy Technology Data Exchange (ETDEWEB)

This presentation described the geology of the Kootenay, Gething, Gates, Brazeau and Coalspur Formations in the potential gas-bearing coal zones of the Alberta Foothills/Mountains. The future potential of this region for coalbed methane (CBM) exploitation was discussed, based on available data from drilling activity and the results of a recent coal desorption and adsorption study in the Val d'Or seam of the Coalspur formation. The gas content of the 5 coal zones was evaluated and compared with previous CBM exploration in the area. For evaluation purposes, the coal zones were divided into shallow and deep coal zones. The potential gas content of the shallow coal zones is approximately 31 Tcf of CBM. This is considered an inferred, initial, in-place, CBM resource estimate based on limited data. The gas content of deep zones is approximately 99 Tcf of ...

Energy Technology Data Exchange (ETDEWEB)

This report describes the geology of the following 5 Alberta Foothills/Mountains coal zones: the Kootenay, Gething, Gates, Brazeau and Coalspur coal zones. The coal areas were assessed for gas content and compared with previous coalbed methane (CBM) exploration in the area. The coal zones can be divided into shallow (less than 1000 m depth) and deep (greater than 1000 m depth) coal zones for evaluation purposes. The potential gas content of the shallow coal zones is approximately 31 Tcf of CBM. This is considered an inferred, initial, in-place, CBM resource estimate based on limited data. The gas content of deep zones is approximately 99 Tcf of in-place CBM gas. Therefore, the total ultimate CBM resource is estimated at 130 Tcf. CBM recovery is not usually attempted due to high drilling costs and low permeability. The only CBM production from the Foothills has ...

Energy Technology Data Exchange (ETDEWEB)

A method using a focused ion beam (FIB) to prepare a silicon amorphous material is presented. The method involves the redeposition of sputtered material generated during the interaction of the Ga{sup +} ion beam with a silicon substrate material. The shape and dimensions of this amorphous material are self-organized and reproducible. The stability of this amorphous material under electron irradiation was investigated in the transmission electron microscopy (TEM). Electron irradiation can induce recrystallization of the amorphous material, resulting in the lateral and vertical growth, starting at an amorphous-crystalline interface, of polysilicon containing defects.

Energy Technology Data Exchange (ETDEWEB)

The performance of a thermophotovoltaic (TPV) converter for solar energy is compared with that of direct solar energy conversion by silicon and germanium solar cells. The optical selectivity of an intermediate emitter is computed. Experimental results on selective emission, based on selectively emitting materials and on antireflection coatings on metals, are reported. For a TPV converter equipped with silicon solar cells, no selective emitter is found to yield better results than would be obtained by direct conversion. A TPV converter with germanium cells operating with a ThO/sub 2/-coated tungsten emitter, however, may achieve a conversion efficiency superior to that of direct solar energy conversion by either silicon or germanium solar cells.

International Nuclear Information System (INIS)

The effect of a mineralizer, magnesium silicate, on the nitridation of compacts consisting of silicon, clay, silica and silicon carbide was examined in terms of their reaction depth, density, porosity, phase composition and microstructure. It was found that addition of mineralizer slowed down the nitridation significantly. The kinetic process of isothermal nitridation in the presence of magnesium silicate obeys a parabolic rate law. Otherwise it obeys a linear rate law. The results suggest that nitrogen transportation is the limiting step during nitridation when mineralizer is added. The mechanism of nitridation is discussed in terms of phase composition and microstructure. Copyright (2000) The Australian Ceramic Society

UK PubMed Central (United Kingdom)

The resistance to destruction of spores of Bacillus subtilis var. niger occluded in crystals of calcium carbonate and exposed to ethylene oxide and moist and dry heat...Full Text Available

UK PubMed Central (United Kingdom)

IntroductionThe murine air pouch is a bursa-like space that resembles the human synovial membrane. Injection of monosodium urate (MSU) crystals into the pouch elicits an acute inflammatory...Full Text Available

International Nuclear Information System (INIS)

Single crystals of semi-organic L-histidine hydrobromide have been grown by slow evaporation technique from a mixture of L-histidine and hydrobromic acid in aqueous solution at ambient temperature. From high-resolution X-ray diffraction analysis, the crystalline perfection of the grown crystal has been studied. Single crystal X-ray diffraction analyses, Nuclear Magnetic Resonance spectral analysis, Thermo-Gravimetry (TG), Differential Thermal Analysis (DTA) and hardness test have been employed to characterize the as-grown crystals. The UV cutoff wavelength of the grown crystal is below 300 nm and has a wide transparency window, which is suitable for second harmonic generation of laser in the blue region. Nonlinear optical characteristics have been studied using Q switched Nd:YAG laser (#lambda#=1064 nm). The second harmonic generation conversion efficiency of the grown ...

UK PubMed Central (United Kingdom)

We compared two insecticidal and eight noninsecticidal soil isolates of Bacillus thuringiensis with regard to the solubility of their proteinaceous crystals at alkaline pH values. The...Full Text Available

CERN Document Server

Experimental data are reported on the micro-irregularities of resistivity in longitudinal and transverse specimens of germanium 0.5 to 0.8 mm in thickness and 25 to 40 mm in width. These data are correlated with the conditions of growth of the crystals. (16 refs).

International Nuclear Information System (INIS)

(1973). United Kingdom Baldwin, TO Dunn, JE Southern Illinois Univ.,

Science.gov (United States)

... and facilities; the physical processing of materials into products; and processes associated with ... area of bulk silicon prod! uction as wafer material has been omitted, in keeping with current ...

International Nuclear Information System (INIS)

Radioactive "3"1Si was used as a tracer to study silicon self-diffusion in thin film silicides of cobalt, nickel, palladium and platinum. The specimens were prepared by sequential electron beam evaporation of radioactive "3"1Si and of the metal onto cleaned silicon wafers. By vacuum annealing at the appropriate formation temperature a silicide about 250 nm thick containing a sharp radioactive band about 50 nm thick was generally formed. Subsequent heating above the formation temperature resulted in a spreading of the activity owing to silicon self-diffusion. Activity profiles in the silicides were measured by a combination of ion beam sputtering, radioactivity counting and Rutherford backscattering of charged nuclear particles. (orig.).

International Nuclear Information System (INIS)

This paper reviews the state of the art of silicon-germanium technology and assesses the problems of building thermoelectric modules in Europe, based upon silicon-germanium alloys, for use in multihundred watt radio-isotope thermoelectric generator. The generator developed in the United States for the International Solar Polar mission has been used as a reference system. The essential features of an alternative system, which employs thermocouples fabricated from improved silicon-germanium alloys based upon a design by the Fairchild Space and Electronics Company, is also described. It is concluded that although the fabrication of reliable electrical contacts will present a major problem, the technology is available in Europe to build thermoelectric modules similar to those developed for the International Solar Polar mission. (orig.).

Science.gov (United States)

ing materials were ASARCO, 59 purity, copper, silver and gold, while the silicon was Dow-Corning semi- conductor grade (69 purity). ...

Energy Technology Data Exchange (ETDEWEB)

In this article a production method of a magnetorheological suspension composed with silicon steel particles of size 0.1-0.15 mm and 4% silicon content is described. Steel particles were dispersed in a conducting carrier of a by mixture of graphite particles with size 2-5 {mu}m and cedar wood oil. The filling factor of the suspension with the silicon steel particles and with graphite particles amounted to 0.25-0.40. Samples of this suspension were placed in a rectangular vessel with electrodes and used for the investigation of the Hall effect in magnetic field with induction 0-8 T, generated by Bitter-type magnet. A non-linear dependence of Hall voltage on the induction of the applied magnetic field and a hysteresis loop of this voltage in the shape of inclined digit eight were found. The causes of the observed effects is the ordering of silicon steel particles and graphite particles along the side of ...

International Nuclear Information System (INIS)

We have simulated the transient enhanced diffusion (TED) of boron fluoride (BF_2"+) implanted in crystalline and germanium amorphized silicon. Based on recently published models, the effect of fluorine on boron diffusion in silicon has been introduced and a modelling has been suggested. In order to simulate the boron experimental profiles, we have assumed that fluorine forms clusters involving interstitial boron which reduces the junction depth. Experimental results indicate that fluorine behaviour depends on amorphization energy. Moreover, even no germanium preamorphization is performed, silicon is still amorphized by fluorine species. Hence, BF_2"+ implantation leads to an amorphous/crystalline (a/c) interface near the surface. An improvement of published models is suggested taking into account fluorine effects. The simulations satisfactory reproduce the SIMS experimental profiles for a large scale of experimental ...

International Nuclear Information System (INIS)

#alpha#/#beta# sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the #alpha# to #beta# phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phase transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si_3N_4 whisker and rim being #beta#-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300 deg C to be about 130 MPa lower than that measured at RT for the whisker reinforced composite. (author).

International Nuclear Information System (INIS)

The simultaneous hydrogen and silicon atom densities in amorphous silicon, a-Si, films prepared by the glow discharge technique have been measured by 25 MeV #alpha#-particle elastic scattering. Integrated band intensities for the silicon-hydrogen stretching modes, #omega#_1sup(s) and #omega#_2sup(s) in the region 1800 to 2200 cm"-"1 were determined for the same freely supported films. A similar analysis has been carried out for the bands observed at 890, 840 and 640 cm"-_1. Effective oscillator strengths for the #omega#_1sup(s) and #omega#_2sup(s) modes in a-Si films have been estimated and compared with the current theories on the effect of the silicon matrix on the infrared absorption characteristics. (author).

International Science & Technology Center (ISTC)

Corrosion- and Wear Resistant Silicon Containing Chromium-Manganese and Nickel-Chromium-Manganese Nonmagnetic Steels with Increased Strength and Toughness for Reliable Work at Normal and Cryogenic Temperatures

International Nuclear Information System (INIS)

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 deg. C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of #approx#2.1 eV.

Science.gov (United States)

into the SiC interface to form of palladium silicides (PdSix) and the subsequent migration of elemental silicon to the surface from the SiC. Palladium silicides are ...

Energy Technology Data Exchange (ETDEWEB)

Abstract not provided

British Library Electronic Table of Contents (United Kingdom)

This work is concentrated on growth, spectroscopy and laser performance of thulium-doped vanadate crystals. At the beginning the growth techniques are analyzed and then the matrix of vanadates crystal, its structure and physicochemical properties are explained together with the rare earth activators influence. Detailed spectroscopy of the thulium-doped vanadate crystals then follows. On the background of this theoretical analysis and state of the art of the subject the description of thulium vanadate lasers (especially Tm:YVO"4, Tm:GdVO"4, and Tm:LuVO"4) together with their generated output radiation characteristics are presented.

Energy Technology Data Exchange (ETDEWEB)

No abstract prepared

Science.gov (United States)

... pulses by a 50/50 beamsplitter and recombined in space and in time inside a wafer of KDP crystal which generates a second harmonic of the ...

International Nuclear Information System (INIS)

We report investigations of enhancement in material conversion efficiency of KDP for SHG applications. The limitation of conventional technique of growing KDP crystal was overcome in the present work by adopting a growth method to grow KDP directly in type-II phase matching direction. The conventional technique results in #approx#30% of the crystal volume usable for SHG applications whereas the present method has resulted in enhancing it to #approx#90%. The orientation of the element was confirmed by frequency conversion experiment using Nd:YAG laser. The UV-vis transmittance obtained was 92%. The interferometric results show that the crystals have excellent optical homogeneity.

International Nuclear Information System (INIS)

... Yoshiaki Toshiba Corp., Nuclear Power Division, Yokohama, Kanagawa (Japan)

Science.gov (United States)

... analyzer section for angle resolved measurements, and a thin film evaporator with a quartz crystal microbalance to measure the mass deposition. ...

International Nuclear Information System (INIS)

By the example of CH2Cl2, CF2Cl2, CHF2Cl, C2F6, C2H6, SF6 and C6H12 we have investigated the isobaric thermal conductivity jump at crystal-liquid phase transition. It is shown that the reduction in the thermal conductivity at melting derives from the degree of orientational ordering of the crystals at pre-melting point.

Energy Technology Data Exchange (ETDEWEB)

Hydrothermal method for preparing crystal borophosphate with zeolite structure is suggested. To increase absorption capacity and thermal stability of final product, aluminium hydroxide sol, ethylenediamine and ethyl acetate are added to the mixture of crystal boric and concentrated phosphoric acids. Thermal stability of the specimens prepared constitutes 880-950 deg, water absorption capacity is within the limits of 0.30-0.32 cmT/g. 1 table.

Energy Technology Data Exchange (ETDEWEB)

Experimental data in the Kondo lattice YbPd{sub 2}Si{sub 2} is compared with the results of a hybridization model, based ont he 'large degeneracy expansion' approximation, which takes into account the crystal field level splittings of the Yb ion. We show that satisfactory agreement is obtained with a unique set of crystal field and hybridization parameters. (orig.).

British Library Electronic Table of Contents (United Kingdom)

The contention of this commentary, focused on the vestibulocerebellum (particularly the flocculus), is that the great importance for our understanding of cerebellar organization in terms of climbing fiber zones, begun years ago by Voogd [1969, 2011] and Oscarsson [1969], needs to be matched by coming more to grips with the other fundamental geometrical organization of the cerebellum, the parallel fibers. The central issue is the selection of those parallel fiber signals to be transformed into Purkinje cell activity in the different zones. At present, in comparison to our knowledge of vestibulocerebellar climbing fiber inputs, the deficiencies in our knowledge of the zonal anatomy and physiology of vestibulocerebellar mossy fibers and granule cells are glaring. The recent emphasis on molecu...

Energy Technology Data Exchange (ETDEWEB)

Temperature and concentration profiles of CO in a laminar, axisymmetric, premixed methane-air Bunsen flame are measured using line-of-sight diode laser absorption spectroscopy and computer tomographic (CT) reconstruction. Absorption spectra for P(20) (v=2<-1) and P(27) (v=1<-0) vibrotational transitions of CO were measured at 21 evenly spaced positions over a 1.33 cm span for a 1.3 cm radius flame. CT reconstruction algorithm was based on Fourier convolution. The tomographically reconstructed normalized transmission profiles derived from absorption spectra, in conjunction with a quantum mechanical model for vibrotational behavior of CO, yielded both temperature and concentration profiles. The Bunsen flame had 3 distinct zones: an inner rich-premixed flame zone, an outer non-premixed flame zone and an unburnt core region. The reconstructed temperature profile showed that the core region temperature was close to ambient ...

KoreaScience (Korea)

Full Text Available

International Nuclear Information System (INIS)

Portuguese 1984. p. 146. Brazil Czepielewski, MA Kater, CE Biglieri, EG Escola

Science.gov (United States)

... In a first-of-its-kind operation, Lisnave recently converted Latvian Shipping Company's 20,000 dwt products tanker Dzintari into a full Class 3 ...

British Library Electronic Table of Contents (United Kingdom)

A rapid and cost-effective assessment was required to provide advice to management on the connectivity between juvenile and adult life cycle stages of Baldchin Groper Choerodon rubescens, a labrid endemic to the west coast of Australia, which has high social value, but relatively low commercial fishery importance. To minimise costs we used laser ablation ICP-MS to analyse levels of a small suite of elements (Ca, Mg, Mn, Cu, Zn, Sr, Rb, Ba and Pb) at the margin (adult phase) and core (juvenile phase) of the same otoliths of adult C. rubescens, collected at ten locations in five management zones. The elemental composition of both otolith margins and cores differed significantly among management zones and in some cases among locations within zones. Similarity of the pattern of among-zone elem...

Science.gov (United States)

Satellite Observations of the Southeast Pacific Intertropical Convergence Zone During 1993-1998, Halpern, D.; Hung, C.-W., Journal of Geophysical Research ? ...

International Nuclear Information System (INIS)

Japanese Sep 2009 p. 103-106 Japan Idota, Yasuhiro Inoue, Hiroyuki

Science.gov (United States)

... Accession Number : ADA137272. Title : Effects of Yttrium Microalloying on the Epitaxial Grain Growth in Ti-6Al-4V Weld Fusion Zones. ...

British Library Electronic Table of Contents (United Kingdom)

Rapid administration of stable iodine is essential for the saturation and subsequent protection of the thyroid gland against the potential harm caused by radioiodines. This paper proposes the Dutch risk analysis that uses an atmospheric dispersion model to calculate the size of the zones around nuclear power plants where radiological thyroid doses for children might be sufficiently high to warrant iodine administration. Dose calculations for possible releases from the nuclear power plants of Borssele (The Netherlands), Doel (Belgium) and Emsland (Germany) are based on two scenarios in combination with a 1-y set of authentic, high-resolution meteorological data. The dimensions of the circular zones were defined for each nuclear power plant. In these zones, with a radius up to 50 km, distrib...

International Nuclear Information System (INIS)

The evolution of metallic substance atomic structure is studied on temperature variation including crystal heating up to melting points, a crystal- liquid phase transition and initiation of a high-density liquid specific structure. It is marked that heat induced changes of simple metal structure can be described as changes around a natural elementary cell which is common for both a crystal and a liquid and consists of a central atom and Z_1 atoms of the first coordination sphere. On this basis the vacancy model of melting is verified. Concentrations of melting vacancies are determined by coordination numbers in the form of Z_1/(1+Z_1)"2 which are the same for both a crystal and a natural elementary cell. The size of natural elementary cells is in an agreement with that of the coordination sphere featured in the liquid and phase transition statistical theory. Calculated data are given for a number of ...

British Library Electronic Table of Contents (United Kingdom)

Based on the corrected phase diagrams proper growth conditions for Li2Zn2(MoO4)3 crystals are selected. Large crystals (up to 100 mm), both impurity-free and activated by transition metal ions (Cu, Cr), are grown by the low-gradient Czochralski method. By the EPR method the charge state and structural position of copper and chromium ions are determined. The performed studies of luminescent properties show that for impurity-free crystals luminescence with ? = 388 nm with a two-exponential luminescence decay with ?1 = 2 ns and ?2 = 6 ns is observed at room temperature. At 77 K for both impurity-free crystals and those activated with transition metal ions luminescence with ? = 560 nm and the luminescence lifetime ? = 100 ns is observed, the intensity of luminescence with ? = 560 nm depending ...

International Nuclear Information System (INIS)

The absorption and magnetic circular dichroism spectra of [N(n-Bu)_4]"+[(MeCp)_3PrCl]"- dissolved in 2-MeTHF were measured at room and at low temperatures. On the basis of these spectra the crystal field splitting pattern could be derived. The parameters of an empirical Hamiltonian were fitted to the energies of 42 levels to give an r.m.s. deviation of 23 cm"-"1. From the crystal field parameters obtained the crystal field strength of the ligand collective was estimated. Compared with neutral Cp_3Pr circle B complexes the crystal field strength of the anionic [(MeCp)_3PrCl]"- moiety is unusually low. (orig.)

Energy Technology Data Exchange (ETDEWEB)

We demonstrate a two-dimensional device simulator for MOSFET structures that incorporates models for defect distributions and show predicted effects on device switching performance for various spatial distributions of defects in amorphous and polycrystalline silicon.

Energy Technology Data Exchange (ETDEWEB)

The Si-L X-ray emission spectrum of amorphous hydrogenated silicon (a-Si:H) is presented and discussed. For a qualitative interpretation of the measured spectra cluster calculations of pure Si clusters (SiSi4) and Si clusters with hydrogen (SiSi3H) have been performed using a simplified LCAO-X scheme. In general the level shifts caused by introduction of hydrogen are small compared with the valence band width.

British Library Electronic Table of Contents (United Kingdom)

Cycling parameters (reversible specific capacity, first-cycle coulombic efficiency, accumulated irreversible capacity, and reversible capacity retention) of hybrid electrodes based on mechanical mixtures of a silicon nanopowder with KS6 and MAG-20 synthetic graphites and binders of varied nature were subjected to an integrated analysis in comparison with graphite electrodes.

International Nuclear Information System (INIS)

Transient enhanced diffusion in boron-implanted silicon is interpreted as being due to the fact that during rapid thermal annealing a relaxation process takes place, associated with quasi-chemical reactions including defects. A simple analytical model makes it possible to describe the annealing mechanism on a microscopic scale in terms of reaction-diffusion processes. The measured dependences of the boron diffusion coefficient of the enhanced diffusion on time, temperature and implantation energy are satisfactorily explained. (author).

CERN Document Server

The internal-tracking-system (ITS) of the ALICE detector at LHC, consists of six concentrical barrels of silicon detectors. The outmost two layers are made of double-sided strip detectors (SSD). In the framework of a R and D, the characteristics and performances of these devices, manufactured by two different companies, associated with their designed read-out electronics, have been studied off- and in-beam at the SPS (CERN). The results are presented and discussed.

Energy Technology Data Exchange (ETDEWEB)

A new technology called a self-aligned metal-silicide process is described in the fabrication of silicon detectors. It has been found that this technology improves both detector yield and leakage current. The use of a metal silicide also gives a lower contact resistance and, depending on the thermal process, a controllable junction depth, which may be essential in the integration of detectors and their electronics.

International Nuclear Information System (INIS)

Sputter-removal rates of overlayer and interfacial species on silicon are analyzed to determine sputtering yields for the species involved. Sputtering yields up to two orders of magnitude lower than those measured for silicon are found, and the results are interpreted in terms of a cascade mixing process which continually reburies much of the overlayer material beyond the escape depth of the sputtered atoms.

Energy Technology Data Exchange (ETDEWEB)

Performance of SRF cavities are limited by non-linear localized effects. The variation of local material characters between "hot" and "cold" spots is thus of intense interest. Such locations were identified in a BCP-etched large-grain single-cell cavity and removed for examination by high resolution electron microscopy (SEM), electron-back scattering diffraction microscopy (EBSD), optical microscopy, and 3D profilometry. Pits with clearly discernable crystal facets were observed in both "hotspot" and "coldspot" specimens. The pits were found in-grain, at bi-crystal boundaries, and on tri-crystal junctions. They are interpreted as etch pits induced by surface crystal defects (e.g. dislocations). All "coldspots" examined had qualitatively low density of etching pits or very shallow tri-crystal boundary junction. EBSD revealed the crystal structure surrounding the ...

Energy Technology Data Exchange (ETDEWEB)

Strain-induced crystallization of crosslinked natural rubber (NR) and its synthetic analogue, cis-1,4-polyisoprene (IR), both mixed with various amounts of stearic acid (SA), were investigated by time-resolved X-ray diffraction using a powerful synchrotron radiation source and simultaneous mechanical (tensile) measurement. No acceleration or retardation was observed on NR in spite of the increase of SA amount. Even the SA-free IR crystallized upon stretching, and the overall crystallization behavior of IR shifted to the larger strain ratio with increasing SA content. No difference due to the SA was detected in the deformation of crystal lattice by stress for both NR and IR. These results suggested that the extended network chains are effective for the initiation of crystallization upon stretching, while the role of SA is trivial. These behaviors are much different from their ...

International Nuclear Information System (INIS)

The exchange charge model of crystal field theory has been used to analyze systematically the ground state absorption spectra of octahedrally coordinated Ni"2"+ ion in isostructural nickel halide crystals NiCl_2, NiBr_2, and NiI_2. The parameters of the crystal field acting on the Ni"2"+ ion are calculated from the available crystal structure data. The obtained energy level schemes are compared with experimental absorption spectra; a good agreement with experimental data is demonstrated. Dependencies of the crystal field invariants and covalence effects on the type of ligands are considered. It is shown numerically that the overlap effects between Ni"2"+ ion and ligands increase with an increase of the ligands' atomic number resulting in the following order of the degree of covalence: NiI_2>NiBr_2>NiCl_2.

International Nuclear Information System (INIS)

A technique for following sialon formation in situ by high temperature X-ray diffraction (HT-XRD) was developed. The composition chosen for study was an yttrium #alpha#-sialon with x=0.4. Powder compacts containing silicon nitride, aluminum nitride and yttria powders were pre-sintered at 1350 C and then studied by HT-XRD at temperatures between 1450 and 1580 C and nitrogen pressures of 0.11 MPa. The furnace was made from graphite coated with porous silicon nitride/silicon carbide. The coating prevented silicon carbide formation in the sample up to 1600 C. X-ray diffraction results show the formation of a Y_1_0Al_2Si_3O_1_8N_4 phase at 1350 C, which dissolved to form #alpha#-sialon and other phases at higher temperatures. The amounts of #alpha#-sialon formed are similar to the amounts reported by other authors. An empirical method was used for the calculation of activation energy for the ...

Energy Technology Data Exchange (ETDEWEB)

Previously we have used atomic force anodisation lithography, with a self-assembled monolayer of hexadecyltrichlorosilane as a resist, to pattern silicon oxide nanostructures onto a p-type silicon (1 0 0) substrate. A condensation reaction was used to immobilise carbon nanotubes with high carboxylic acid functionality directly to the silicon oxide. A further condensation reaction using this surface attached the molecule ferrocenemethanol to the bound nanotubes. These new nanostructures were used as electrodes to observe the oxidation and reduction of ferrocene. However, because the small currents measured are near the detection limits of the electrochemical system used, important electrode kinetics could not to be obtained. A scribing approach made larger regions of oxidised silicon leading to the creation of larger scale patterned arrangements of carbon nanotubes allowing measurement of important ...

Energy Technology Data Exchange (ETDEWEB)

The authors propose using synthetic aperture radar(SAR) for wind energy mapping of coastal zones. The SAR equipment is located on the European Space Agency ERS-1 and 2 and the RADARSAT satellites. Examples of wind energy maps and evaluations of their applications are given for the Norwegian west coast.

Energy Technology Data Exchange (ETDEWEB)

A slurry intake device is proposed which contains an inlet sleeve, housing with grating installed with the discharge end in the zone of the slurry outlet, and hinged deflector. In order to conserve the clay mud, it is equipped with a tie rod and two-arm lever which is kinematically linked to the deflector and the grating. It is installed by hinges in relation to the housing and the latter is attached by hinges to the inlet sleeve. The deflector is arranged in the zone of slurry outlet. The device is distinguished by the fact that the deflector is equipped with a cantilever on which a fixable weight is attached.

Energy Technology Data Exchange (ETDEWEB)

The coal bed methane (CBM) potential of five coal zones (the Kootenay, Gething, Gates, Brazeau, and Coalspur) in the Alberta foothills and mountains is re-evaluated. For evaluation, the coal zones are divided into shallow (200 to 2500 m depth) and deep (over 2500 m depth). The total gas content is estimated. Recommendations on how to obtain more reliable resource data and about producibility are included. 41 refs., 12 figs., 3 tabs., 2 apps.

International Nuclear Information System (INIS)

Peculiarities of design of the PGV-1000 horizontal steam generator affecting soluble impurity distribution in its water volume are considered in brief. The results of estimating sodium distribution in different zones of the steam generator are presented. The conclusion is made on the necessity of arrangement of representative measurements of sodium and chloride content in water volume of the steam generator, particularly, in the hot bottom zone for optimization of blow-through flowsheet and its regulations.

Energy Technology Data Exchange (ETDEWEB)

Contents include: introduction; river systems; physical processes; chemical processes; estuaries and coastal zone; introduction; physical processes; chemical processes; the role of sediments; introduction; the anoxic layer; major-element chemistry; minor-element chemistry; the oxic-anoxic interface; assessment; introduction; analysis of sediments; modelling.

Energy Technology Data Exchange (ETDEWEB)

Transport and deposition of atmospheric lead over the coastal zone of Northern Germany are investigated. It is shown that marked differences in the impact of the ecologically valuable wadden sea areas can occur between summer and winter time. Due to the formation of sea breeze systems in summer the coastal zone is likely to be less stressed than in winter when the pollutant is confined to a shallow layer above ground. (orig.) 10 refs.

Energy Technology Data Exchange (ETDEWEB)

The relationship between the QRS transition zone of the standard 12-lead ECG and interventricular septum was studied. The position and the angle to the horizontal line of the interventricular septum were evaluated with computed tomography (CT) and compared to the QRS transition zone. The subjects were 36 patients with no cardiovascular diseases. The patients were divided into 3 groups according to the position of QRS transition zone: V{sub 1}-V{sub 2} (8 cases), V{sub 3}-V{sub 4} (21 cases), and V{sub 5}-V{sub 6} (7 cases). The interventricular septum on CT was directed to the anterior chest wall between V{sub 3} and V{sub 4} in all 3 groups. The mean value of the interventricular septal angle did not differ from group to group, 52.1deg for V{sub 1}-V{sub 2} group, 49.8deg for V{sub 3}-V{sub 4} group, and 48.2deg for V{sub 5}-V{sub 6}. It was concluded that the direction of the interventricular septum was not one of the ...